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Sample records for pemercepat elektron mbe

  1. Surface Evolution during MBE Growth

    NASA Astrophysics Data System (ADS)

    Orme, C.; Orr, B. G.

    The evolution of surfaces grown using molecular beam epitaxy (MBE) is an interesting scientific issue as well as an important technological concern. In this review article we examine surface evolution during film growth from several different points of view. Experimental, simulational and analytical descriptions of the process are discussed.

  2. [Russian oxygen generation system "Elektron-VM": hydrogen content in electrolytically produced oxygen for breathing by International Space Station crews].

    PubMed

    Proshkin, V Yu; Kurmazenko, E A

    2014-01-01

    The article presents the particulars of hydrogen content in electrolysis oxygen produced aboard the ISS Russian segment by oxygen generator "Elektron-VM" (SGK) for crew breathing. Hydrogen content was estimated as in the course of SGK operation in the ISS RS, so during the ground life tests. According to the investigation of hydrogen sources, the primary path of H2 appearance in oxygen is its diffusion through the porous diaphragm separating the electrolytic-cell cathode and anode chambers. Effectiveness of hydrogen oxidation in the SGK reheating unit was evaluated.

  3. [Russian oxygen generation system "Elektron-VM": hydrogen content in electrolytically produced oxygen for breathing by International Space Station crews].

    PubMed

    Proshkin, V Yu; Kurmazenko, E A

    2014-01-01

    The article presents the particulars of hydrogen content in electrolysis oxygen produced aboard the ISS Russian segment by oxygen generator "Elektron-VM" (SGK) for crew breathing. Hydrogen content was estimated as in the course of SGK operation in the ISS RS, so during the ground life tests. According to the investigation of hydrogen sources, the primary path of H2 appearance in oxygen is its diffusion through the porous diaphragm separating the electrolytic-cell cathode and anode chambers. Effectiveness of hydrogen oxidation in the SGK reheating unit was evaluated. PMID:25035898

  4. MBE HgCdTe heterostructure detectors

    NASA Technical Reports Server (NTRS)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  5. Fabrication of photovoltaic laser energy converterby MBE

    NASA Technical Reports Server (NTRS)

    Lu, Hamilton; Wang, Scott; Chan, W. S.

    1993-01-01

    A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

  6. 15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND SECOND FLOORS; GASOLINE PUMPS CENTER (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  7. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  8. STM and MBE: one of the best combinations

    NASA Astrophysics Data System (ADS)

    Jia, Jin-Feng; Ma, Xucun; Chen, Xi; Sakurai, T.; Xue, Qi-Kun

    2011-11-01

    It has been 30 years since the scanning tunnelling microscope (STM) was invented by G Binnig and H Rohrer. Rapid developments have made STM increasingly powerful as an extremely versatile technique for many disciplines in condensed matter physics, chemistry, biology and other areas. As a state-of-the-art growth method, molecular beam epitaxy (MBE) is a gifted technique for epitaxial growth with atomic-level control. In this paper, by giving several examples, we will show that an STM-MBE combined system is more powerful and unique for studies on low-dimensional and new functional materials.

  9. Let the Questions Be Your Guide: MBE as Interdisciplinary Science

    ERIC Educational Resources Information Center

    Rose, L. Todd; Daley, Samantha G.; Rose, David H.

    2011-01-01

    From its inception, the field of Mind, Brain, and Education (MBE) has been conceived as an interdisciplinary science, and with good reason: The phenomena the field aims to understand often arise from interactions among multiple factors, span levels of analysis, and are context dependent. In this article, we argue that to reach its potential as an…

  10. 52. VIEW TO EAST; SOUTH END OF MBE BUILDING, SECOND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    52. VIEW TO EAST; SOUTH END OF MBE BUILDING, SECOND FLOOR; HIGHLY ALTERED INTERIOR OFFICE SPACE, FORMERLY REGIONAL OFFICES OF REA (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  11. Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014)

    NASA Astrophysics Data System (ADS)

    Brown, April S.; Ptak, Aaron J.

    2015-09-01

    The first International Conference on Molecular Beam Epitaxy (IC-MBE) was held in Paris in 1978, chaired by Alfred Y. Cho. Every other year since, with the exception of a four-year break after the initial meeting, the IC-MBE has been held in European, Asian, and North American venues. The 18th and latest IC-MBE was held in Flagstaff, Arizona, USA, September 7-12, 2014, and was chaired by Yong-Hang Zhang (Arizona State University). MBE is an advanced crystal growth method that benefits areas from the study of fundamental physics, all the way through the production of devices used in countless fields. IC-MBE brings together researchers from all over the world, and is the premier forum for scientific and technological exchange among researchers investigating all types of materials growth using the MBE technique.

  12. Millimeterwave and digital applications of InP-based MBE grown HEMTs and HBTs

    NASA Astrophysics Data System (ADS)

    Greiling, Paul

    1997-05-01

    Microwave and millimeterwave devices grown by MBE have significantly advanced the state of the art for RF device performance with respect to noise figure, power output, power added efficiency and extended the clock frequency of digital circuits into the millimeterwave regime. Ober the last 10-15 years, military systems have greatly benefited from the superior performance of MBE grown devices. In order to have a similar impact on the commercial marketplace, MBE growers will have to focus their efforts on a different set of performance criteria; i.e. cost, uniformity and reproducibility. This paper discusses outstanding performance achieved by MBE grown devices and outlines the criteria for commercial applications.

  13. Solid source MBE growth of quantum cascade lasers

    NASA Astrophysics Data System (ADS)

    Liu, Feng-Qi; Li, Lu; Wang, Lijun; Liu, Junqi; Zhang, Wei; Zhang, Quande; Liu, Wanfeng; Lu, Quanyong; Wang, Zhanguo

    2009-11-01

    High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.

  14. MBE monolayer growth control by in-situ electron microscopy

    NASA Astrophysics Data System (ADS)

    Inoue, N.

    1991-05-01

    A molecular beam epitaxy/scanning reflection electron microscope/scanning electron microscope (MBE-SREM-SEM) hybrid system is developed as an in-situ observation technique for study and control of growth of GaAs and AlGaAs. The resolution is 50 nm for SREM and 30 nm for SEM at 10 s/frame observation rate. The highest observation rate is 1 s/frame for SREM and 1/60 s/frame for SEM. Three applications are established: The observation of quick, transient growth processes to clarify the growth mechanism, the measurement of material properties under actual growth conditions to understand and control growth, and growth control by in-process monitoring, in which a micron scale lateral growth of Ga/Al monolayer is developed.

  15. MBE growth of VCSELs for high volume applications

    NASA Astrophysics Data System (ADS)

    Jäger, Roland; Riedl, Michael C.

    2011-05-01

    Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

  16. Architectural optimization of an epoxy-based hybrid sol-gel coating for the corrosion protection of a cast Elektron21 magnesium alloy

    NASA Astrophysics Data System (ADS)

    Murillo-Gutiérrez, N. V.; Ansart, F.; Bonino, J.-P.; Kunst, S. R.; Malfatti, C. F.

    2014-08-01

    An epoxy-based hybrid sol-gel coating was prepared in various architectural configurations has been studied for the corrosion protection of a cast Elektron21 magnesium alloy. The creation of a single layer of this coating presents defects consisting of macro-pores and protuberances, which opens access for corrosive species to reach the metallic substrate. These defects are suspected to result from the high reactivity of the substrate, as well as to the irregular topography of the substrate disrupted by the microstructure of the own magnesium alloy. Hence, a sol-gel coating in bilayer architecture is proposed, where the first layer would “inert” the surface of the magnesium substrate, and the second layer would cover the defects of the first layer and also thickening the coating. The morphological characteristics of the sol-gel coatings were analyzed by scanning electron microscopy (SEM), and their corrosion behavior was evaluated by OCP (open circuit potential) monitoring and electrochemical impedance spectroscopy (EIS) in chloride media. It is shown that both the architectural arrangement and the individual thickness of the first and second layers have an important influence on the anticorrosion performances of the protective system, just as much as its global thickness.

  17. MBE growth and characteristics of antimonide-based quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Xue

    Semiconductor quantum dots (QDs) are an important class of low dimensional materials for optoelectronic applications since they offer the possibility of a three-dimensional carrier confinement. Among III-V semiconductor material systems, antimony-based QDs hold the promise for the realization of low threshold room-temperature mid-infrared lasers because of the low band gap energy (0.17 eV at 300K) of InSb and the large lattice mismatch between InSb and GaSb. The fabrication of InSb/GaSb self-assembled QDs for optoelectronic applications by Molecular Beam Epitaxy (MBE) is ventured in this dissertation. Here both uncapped and capped self-assembled InSb QDs are fabricated by MBE on nominal GaSb (100)+/-0.1°and GaSb (100)+/-6°. The growth conditions are optimized to obtain QDs with both high density and good uniformity. The influence of growth parameters i.e., substrate temperature, nominally deposited thickness, annealing time and substrate orientation on QD size, uniformity and distribution, are systematically studied. The structural and optical properties of these QDs are characterized using in-situ Reflection High-energy Electron Diffraction (RHEED), and ex-situ Atomic Force Microscopy (AFM) and Photo-Luminescence (PL) measurements. Confined energy levels in the strained InSb/GaSb QD system are estimated theoretically and compared with the experimental results. Three-dimensional uncapped InSb QDs were successfully grown on GaSb (100) substrates at a density of 2.8x109/cm2 by MBE via the Stranski-Krastanov mode of self-organization. The two-dimensional to three-dimensional transition in this mode releases the strain arising from the mis-match between the substrate and the epilayer. The average base side length of the resulting QDs is 100+/-24 nm and the height is 4.9+/-1.6 nm. The best size uniformity, with standard deviations of 23% for base length and 48% for height was obtained under the optimized growth conditions of 3.9ML material deposition, a growth

  18. Gold coverage and faceting of MBE grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    David, Thomas; Roussel, Luc; Neisius, Thomas; Cabie, Martiane; Gailhanou, Marc; Alfonso, Claude

    2013-11-01

    In this paper, we investigate the faceting of molecular beam epitaxy (MBE) grown nanowires and the post-growth repartition of the gold used as catalyst. Electron microscopy analysis are performed using Scanning Transmission Electron Microscopy - High Angle Annular Dark Field (STEM-HAADF), electron tomography, and Energy-dispersive X-ray spectroscopy (EDS) to collect complementary information. The nanowires present very little to no faceting at the very top, very close to the catalyst, suggesting the nanowires grow with a quasi-circular section at the early stages of growth. The nanowires are then found to have an hexagonal and/or dodecagonal section and present a finer ‘saw-tooth’ faceting on the main faces. We find gold clusters spread on the surfaces of the nanowires, but we could not observe any gold inside the nanowires. Furthermore, the gold coverage is uneven on the different facets of the nanowire. The creation of these facets and the gold coverage are two linked phenomena balancing each other.

  19. Methods for the doping of silicon layers in growth by sublimation MBE

    SciTech Connect

    Shengurov, V. G.; Svetlov, S. P. Chalkov, V. Yu.; Shengurov, D. V.; Denisov, S. A.

    2006-02-15

    Epitaxial layers doped with various impurities were grown by sublimation MBE on Si (100) substrates. Doping with phosphorus was controlled at electron densities ranging from 2x10{sup 13} to 10{sup 19} cm{sup -3}. A high dopant concentration of {approx}10{sup 20} cm{sup -3} was obtained from the evaporation of partly molten Si sources. It shown that the type and concentration of an impurity in the sublimation MBE process can be controlled by the fabrication of multilayer p{sup +}-n{sup +} structures.

  20. A Novel Technique for Detecting Trace Residues of Contamination on GaAs Surfaces before MBE Growth

    NASA Astrophysics Data System (ADS)

    Lee, Jerry; West, Ken; Baldwin, Kirk; Pfeiffer, Loren

    2012-02-01

    To prepare a GaAs substrate for molecular beam epitaxial (MBE) growth, the nominal ˜ 3 nm native oxide is typically thermally desorbed in vacuum. To test the completeness of this desorption, we describe a technique, which combines MBE, thermal desorption, atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS), for detecting trace residues of contamination on (100) GaAs surfaces before MBE growth. At all desorption temperatures in the range 600 C to 665 C, our RHEED measurements show that the native oxide is largely desorbed within 2 min. However, the SIMS and AFM data indicate that a residue of sub-monolayer oxide invariably remains on the GaAs (100) surface, and tenaciously resists all further attempts at its removal by thermal desorption. Since thermal desorption of the native oxide has long been the standard technique before MBE growth, we suggest that all MBE growth of GaAs heterostructures has been through a partial monolayer of native oxide. We believe that this is the likely reason for the failure of high quality attempts at MBE growth of GaAs after lithographic patterning on a previously grown MBE structure.

  1. Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Solodovnik, M. S.; Balakirev, S. V.; Mikhaylin, I. A.; Eremenko, M. M.

    2016-08-01

    The GaAs native oxide effect upon the surface morphology of the GaAs epitaxial layer was studied with taking into account the main growth parameters of MBE technology: substrate temperature, effective As4/Ga flux ratio and growth rate. The MBE modes of atomically smooth and rough surfaces and surfaces with Ga droplet array formation were determined. The possibility of the obtaining of GaAs nanowires via GaAs native oxide layer was shown.

  2. Large format MBE HgCdTe on silicon detector development for astronomy

    NASA Astrophysics Data System (ADS)

    Hanold, Brandon J.; Figer, Donald F.; Lee, Joong; Kolb, Kimberly; Marcuson, Iain; Corrales, Elizabeth; Getty, Jonathan; Mears, Lynn

    2015-08-01

    The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5μm cutoff MBE HgCdTe/Si detectors including pre- and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.

  3. Growth of III-V films by control of MBE growth front stoichiometry

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.

  4. New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

    NASA Technical Reports Server (NTRS)

    1988-01-01

    A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

  5. Static and dynamic magnetic property of MBE-grown Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Huo, Yan; Zhao, Jianhua; Wu, Yizheng; Zhang, Xinhui

    2014-08-01

    In this work, the static and dynamic magnetic properties of Co2FeAl films grown by molecular beam epitaxy (MBE) were studied by employing the magneto-optical Kerr rotation and ferromagnetic resonance (FMR) measurements. The growth temperature dependent magnetocrystalline anisotropy of MBE-grown Co2FeAl films were first investigated by employing the rotating magneto-optical Kerr effect. Then the magnetization dynamics and Gilbert damping property for high quality Co2FeAl films were investigated in detail by combining both the FMR and time-resolved magneto-optical Kerr rotation techniques. The apparent damping parameter was found to show strong dependence on the strength of the applied magnetic field at low-field regime, but decrease drastically with increasing magnetic field and eventually become a constant value of 0.004 at high-field regime. The inhomogeneity of magnetocrystalline anisotropy and two-magnon scattering are suggested to be responsible for the observed abnormal damping properties observed especially at low field regime. The intrinsic damping parameter of 0.004 is deduced for our highly-ordered Co2FeAl film. Our results provide essential information for highly-ordered MBE-grown Co2FeA film and its possible application in spintronic devices.

  6. Synchrotron x-ray photoconductor detector arrays made on MBE grown CdTe

    SciTech Connect

    Yoo, S.S.; Montano, P.A. |; Rodricks, B.; Sivananthan, S.; Faurie, J.P.

    1996-08-01

    We have been fabricating x-ray photoconductor linear array detectors using molecular beam epitaxially (MBE) grown (111)B undoped CdTe layers on (100) Si substrates. A novel technique was developed to remove the Si and to mount the fragile MBE grown CdTe layers onto insulating ceramic substrates. 256 channel linear photoconductor array devices were fabricated on the resulting CdTe layers. The resistivity of MBE (111)B CdTe was high (> 10{sup 8} {Omega}cm) enough to utilize the material for low energy (8 to 25 keV) x-ray detectors. The stability of the detectors are satisfactory, and they were tested at room temperature routinely for over a year. The performance of the photoconductor was greatly improved when the detector was cooled to 230K. Due to its reduced dark current at low temperatures, the dynamic range of the detector response increased to nearly four decades at 230K. 29 refs., 8 figs.

  7. Recent progress in MBE grown HgCdTe materials and devices at UWA

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  8. Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106 cm2/V s in AlGaAs/GaAs quantum wells grown by MBE

    NASA Astrophysics Data System (ADS)

    Gardner, Geoffrey C.; Fallahi, Saeed; Watson, John D.; Manfra, Michael J.

    2016-05-01

    We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility μ in excess of 35×106 cm2/V s at density n=3.0×1011/cm2 and μ=18×106 cm2/V s at n=1.1×1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting μ<40×106 cm2/V s. We describe strategies to overcome this limitation.

  9. Low-power optically addressed spatial light modulators using MBE-grown III-V structures

    NASA Astrophysics Data System (ADS)

    Maserjian, Joseph L.; Larsson, Anders G.

    1991-12-01

    Device approaches are investigated for O-SLMs based on MBE engineered III-V materials and structures. Strong photo-optic effects can be achieved in periodically (delta) -doped multiple quantum well (MQW) structures. The doping-defined barriers serve to separate and delay recombination of the photo-generated electron-hole pairs. One can use this photo-effect to change the internal field across the MQWs giving rise to quantum-confined Stark shift. Alternately, the photo-generated electrons can be used to occupy the quantum wells, which in turn causes exciton quenching and a shift of the absorption edge. Recent work has shown that both of these predicted photo-optic effects can indeed be achieved in such MBE engineered structures. However, these enhanced effects are still insufficient for high contrast modulation with only single or double pass absorption through active layers of practical thickness. We use the asymmetric Fabry-Perot cavity approach which permits extinction of light due to interference of light reflected from the front and back surfaces of the cavity. Modulation of the absorption in the active cavity layers unbalances the cavity and 'turns on' the reflected output signal, thereby allowing large contrast ratios. This approach is realized with an all-MBE- grown structure consisting of a GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror (approximately equals 0.98) and the GaAs surface as the low reflectance mirror (approximately equals 0.3). We use for our active cavities InGaAs/GaAs MQWs separated by npn (delta) -doped GaAs barriers to achieve sensitive photo-optic effect due to exciton quenching. High contrast modulation (> 60:1) is achieved with the Fabry-Perot structures using low power (< 100 mW/cm2) InGaAs/GaAS quantum well lasers for a write signal.

  10. Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

    NASA Astrophysics Data System (ADS)

    Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

    1999-05-01

    We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

  11. Enhanced magnetoresistance of Co/Cu(111) wedge superlattices grown by MBE

    NASA Astrophysics Data System (ADS)

    Xu, J.; Hickey, B. J.; Howson, M. A.; Greig, D.; Walker, M. J.; Wiser, N.

    1996-04-01

    We have grown epitaxial Co/Cu multilayer samples at different temperatures using MBE on sapphire (11 overline20)0 substrates with a 30 Å layer of Nb as a buffer, and find a remarkable correlation between the sharpness of X-ray rocking curves and the magnitude of the GMR. Whereas the peak GMR for our previous samples grown on GaAs was never greater than 26%, the maximum GMR of samples grown on sapphire under optimal growth conditions was as high as 50%.

  12. Si-doped GaAs/AlGaAs TJS laser by MBE

    SciTech Connect

    Mitsunaga, K.; Fujiwara, K.; Nunoshita, M.; Nakayama, T.

    1984-04-01

    The effect of high temperature annealing on the properties of silicon-doped GaAs/AlGaAs double heterostructure (DH) grown by molecular beam expitaxy (MBE)= and its application to the fabrication of transverse junction stripe (TJS) lasers are reported. In spite of the amphoteric nature of Si, it was found that the high temperature annealing gave little influence on the electrical and optical quality of the n-type DH wafer. The TJS laser using Si-doped GaAs/AlGaAs wafer has been oscillated cw at room temperature and exhibited low threshold current of 30 mA and high quantum efficiency of 60%.

  13. Unique cistrome defined as CsMBE is strictly required for Nrf2-sMaf heterodimer function in cytoprotection.

    PubMed

    Otsuki, Akihito; Suzuki, Mikiko; Katsuoka, Fumiki; Tsuchida, Kouhei; Suda, Hiromi; Morita, Masanobu; Shimizu, Ritsuko; Yamamoto, Masayuki

    2016-02-01

    Nrf2-small Maf (sMaf) heterodimer is essential for the inducible expression of cytoprotective genes upon exposure to oxidative and xenobiotic stresses. While the Nrf2-sMaf heterodimer recognizes DNA sequences referred to as the antioxidant/electrophile responsive element (ARE/EpRE), we here define these DNA sequences collectively as CNC-sMaf binding element (CsMBE). In contrast, large and small Maf proteins are able to form homodimers that recognize the Maf recognition element (MARE). CsMBE and MARE share a conserved core sequence but they differ in the 5'-adjacent nucleotide neighboring the core. Because of the high similarity between the CsMBE and MARE sequences, it has been unclear how many target binding sites and target genes are shared by the Nrf2-sMaf heterodimers and Maf homodimers. To address this issue, we introduced a substitution mutation of alanine to tyrosine at position 502 in Nrf2, which rendered the DNA-binding domain structure of Nrf2 similar to Maf, and generated knock-in mice expressing the Nrf2(A502Y) mutant. Our chromatin immunoprecipitation-sequencing analyses showed that binding sites of Nrf2(A502Y)-sMaf were dramatically changed from CsMBE to MARE in vivo. Intriguingly, however, one-quarter of the Nrf2(A502Y)-sMaf binding sites also bound Nrf2-sMaf commonly and vice versa. RNA-sequencing analyses revealed that Nrf2(A502Y)-sMaf failed to induce expression of major cytoprotective genes upon stress stimulation, which increased the sensitivity of Nrf2(A502Y) mutant mice to acute acetaminophen toxicity. These results demonstrate that the unique cistrome defined as CsMBE is strictly required for the Nrf2-sMaf heterodimer function in cytoprotection and that the roles played by CsMBE differ sharply from those of MARE. PMID:26677805

  14. AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE

    SciTech Connect

    Nishiwaki, T.; Yamaguchi, M.; Sawaki, N.

    2007-04-10

    An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

  15. Unraveling the electron pairing mechanism of FeSe by MBE and STM

    NASA Astrophysics Data System (ADS)

    Song, Canli

    Studies of high-transition-temperature superconductivity usually suffer from various imperfections in materials. Here we apply the state-of-the-art molecular beam epitaxy (MBE) to prepare controllably high-quality FeSe films on various substrates, and explore their superconducting properties using cryogenic scanning tunneling microscope. Single impurities, twin boundaries as well as strain are found in the MBE-grown FeSe films on graphene, and invariably suppress the superconductivity. Meanwhile, electronic nematicity and signatures of a bosonic mode, whose energy also decreases with strain, were identified. More significantly, we observed two disconnected superconducting domes at alkali-metal potassium (K)-dosed FeSe surface, stepping towards the mechanistic understanding of superconductivity in FeSe-derived superconductors. Our results are clarifying the secret of high-Tc superconductivity in FeSe-related superconductors, and by implications, in other unconventional superconductors, and guiding how to enhance Tc by interface engineering. This work was nancially supported by National Science Foundation and Ministry of Science and Technology of China.

  16. Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

    NASA Astrophysics Data System (ADS)

    Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

    Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

  17. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2016-07-12

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  18. Superconducting proximity effect in MBE grown Nb-InAs junctions

    NASA Astrophysics Data System (ADS)

    Kan, Carolyn; Xue, Chi; Law, Stephanie; Eckstein, James

    2013-03-01

    Several proposals for the realization of Majorana fermions rely on excellent quality proximity coupling between a superconductor and a high-mobility semiconductor. We examine the long-range proximity coupling between MBE-grown InAs and in situ grown superconducting overlayers by fabricating transport devices, and investigate the effect of substrate choice and growth conditions on the quality of the MBE InAs. GaAs is commonly available as a high quality insulating substrate. Overcoming its lattice mismatch with InAs using GaSb and AlSb layers results in locally smooth terraced surfaces, but global spiral dislocation structures also appear and have a negative impact on the InAs mobility. Growing InAs on homoepitaxial GaSb results in improved morphology and increases the mean free path. We compare the proximity effect in devices made both ways. This material is based upon work supported by the U.S. Department of Energy, Division of Materials Sciences under Award No. DE-FG02 07ER46453, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

  19. Effects of incident short wavelength (UV) light on the morphology of MBE grown GaAs

    NASA Astrophysics Data System (ADS)

    Beaton, Daniel A.; Sanders, Charlotte; Alberi, Kirstin

    2014-03-01

    The exploration of novel semiconductor materials increasingly relies on growth techniques that operate far from equilibrium in order to overcome thermodynamic limitations to synthesis. As one example, low temperature molecular beam epitaxy (MBE) offers a pathway to enhance substitutional dopant incorporation over surface segregation but adatom mobility suffers as a consequence and leads to higher concentrations of lattice defects. We explore the use of external stimuli, namely incident UV light, as a means to influence adatom kinetics; UV light is absorbed in the first few atomic layers of the as-growing epitaxial film and the effects of the incident radiation predominantly effect only the surface adatoms. GaAs homoepitaxy by MBE is studied as a model case as a function of illumination conditions under broadband Xe and KrF excimer laser irradiation. In-situ reflective high energy electron diffraction analysis paired with ex-situ atomic force microscopy measurements yields insight into the effects of photon irradiation on surface adatom mobility, morphology and smoothing processes. This work was supported by the DOE Office of Science, Basic Energy Sciences under contract DE-AC36-08GO28308.

  20. In-situ monitoring of combinatorial laser MBE by parallel RHEED detection

    NASA Astrophysics Data System (ADS)

    Stauter, C.; Lippmaa, M.; Ohashi, S.; Kawasaki, M.; Koinuma, H.

    1998-03-01

    A combinatorial approach combined with such an atomically regulated thin film deposition technique as laser MBE can be a powerful method to search for new high Tc superconductors and quantum functional oxides. Control of the growth on an atomic scale is possible since the high vaccuum conditions involved in laser MBE allow the use of in-situ monitoring by RHEED. The necessity to control many samples deposited simultaneously during the process has induced us in implementing a RHEED beam sweeping technique: the electron beam is scanned across the substrate surface, the detection being done by a CCD camera looking at the RHEED screen. Using this technique, we have made it possible to control simultaneously the growth of several oxide films at a practical rate. Furthermore, variations of growth rate across the substrate surface caused by plume or temperature gradients have been observed. Interesting applications that can be derived include the possibilty to test quickly many different growth conditions before optimization and the one-by-one evaluation of the influence of deposition parameters.

  1. 40 CFR 33.407 - How long do MBE and WBE fair share objectives remain in effect?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 1 2011-07-01 2011-07-01 false How long do MBE and WBE fair share objectives remain in effect? 33.407 Section 33.407 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... objectives. The fact that a disparity study utilized in negotiating fair share objectives has become...

  2. MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry

    NASA Astrophysics Data System (ADS)

    Aqariden, F.; Elsworth, J.; Zhao, J.; Grein, C. H.; Sivananthan, S.

    2012-10-01

    Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages that explain its dominance in the infrared photon detector marketplace. The thermal generation rate per unit volume of the material is lower and the quantum efficiency for photon absorption in the infrared is higher in HgCdTe than in any competing material—it yields devices with quantum efficiencies as high as 0.99. Recently, EPIR Technologies and DRS Infrared Technologies agreed to collaborate and examine: (i) the feasibility of employing MBE HgCdTe in the fabrication of high-density vertically interconnected photodiodes (HDVIPs), which are usually fabricated with liquid-phase epitaxy material, and (ii) the potential benefits of horizontal integration, with EPIR supplying the MBE materials to DRS for device and array fabrication. The team designed and developed passivation-absorber-passivation structures that are heavily used by DRS. This paper provides an overview of the characteristics of HDVIP devices and arrays fabricated from MBE HgCdTe and the anticipated advantages of horizontal integration in the industry. Material growth, device fabrication, and test results are presented.

  3. MBE grown high-quality Gd 2O 3/Si(1 1 1) hetero-structure

    NASA Astrophysics Data System (ADS)

    Lin, T. D.; Hang, M. C.; Hsu, C. H.; Kwo, J.; Hong, M.

    2007-04-01

    A nearly lattice-matched Gd 2O 3/Si(1 1 1) hetero-epitaxy was demonstrated using molecular beam epitaxy (MBE). Detailed structural studies find that the nano thick Gd 2O 3 films have a cubic phase with a very uniform thickness, an excellent crystallinity and atomically sharp interfaces. These features are characterized by the bright, streaky reconstructed reflection high-energy electron diffraction (RHEED) patterns at the initial oxide growth, the pronounced interference fringes in the X-ray reflectivity curve as well as in the crystal truncation rod around the substrate diffraction peaks using the high-resolution X-ray diffraction. The (1 1 1) axis of the thin oxide is oriented parallel to the substrate (1 1 1) normal with a 60° in-plane symmetry rotation.

  4. Nitride-MBE system for in situ synchrotron X-ray measurements

    NASA Astrophysics Data System (ADS)

    Sasaki, Takuo; Ishikawa, Fumitaro; Yamaguchi, Tomohiro; Takahasi, Masamitu

    2016-05-01

    A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber has two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-ray measurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy were presented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situ measurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitride semiconductors.

  5. Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    SciTech Connect

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-15

    The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.

  6. Structural characterization of Nb on sapphire as a buffer layer for MBE growth

    NASA Astrophysics Data System (ADS)

    Reimer, P. M.; Zabel, H.; Flynn, C. P.; Dura, J. A.

    1993-02-01

    Niobium films grown by molecular beam epitaxy on sapphire substrates are among the highest quality ones that thin-film metal science has yet produced. This system is in intense use as a buffer layer for epitaxial growth of other metal thin films, magnetic films and superlattices as well. We studied films of Nb [110] deposited by MBE on Al 2O 3 [11 overline20] substrates using high-precision X-ray diffraction. Rocking curves of the out-of-plane Nb (110) peak reveal a two-component line shape. The sharper component implies a mosaic distribution an order of magnitude sharper than bulk single crystal Nb and a transverse structural coherence length exceeding 10 3 nm. The atomic planes associated with the sharp component are exactly aligned with the sapphire (11 overline20) planes, while those associated with the broad component are slightly misaligned. Upon loading the Nb film with a small amount of hydrogen, we find a further, dramatic increase of the lateral coherence length. The resulting mosaic distribution of the sharp component appears to be limited only by that of the sapphire substrate. We will discuss the results in terms of strain relief by hydrogen-induced dislocation motion.

  7. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Munuera, Carmen; Varela del Arco, Maria; Soria, Federico; Ocal, Carmen; Ruiz, Ana; Alonso, Maria

    2006-01-01

    Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 x 1 surfaces with low (<1 degree) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 x 7 vicinal substrates misoriented 4 degrees toward the View the MathML source direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.

  8. MBE growth of topological insulator Bi2Se3 and Bi2Te3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Tong; Levy, Niv; Song, Young Jae; Chae, Jungseok; Stroscio, Joseph A.

    2011-03-01

    Three-dimensional (3D) topological insulators are a new state of quantum matter with a band gap in bulk but gapless states on the surface. The surface states with spin helicity can be the host of many striking quantum phenomena. In this work, we use ultrahigh vacuum molecular beam epitaxy to grow atomically flat topological insulator (TI) Bi2Se3 and Bi2Te3 films. High quality TI films were obtained using epitaxial graphene on SiC as a substrate for TI growth. The growth dynamics was characterized by real time reflection high-energy electron diffraction (RHEED). The growth condition was optimized by adjusting for proper flux rate and substrate temperature while monitoring the RHEED patterns. In situ Auger spectroscopy and scanning tunneling microscopy (STM) measurements at 5K are used to study the as-grown films for their stoichiometry and defect density. We expect these MBE grown samples will provide a good candidate for studying the topological surface states and related phenomena, which will be studied using scanning tunneling spectroscopy at millikelvin temperatures

  9. Capture kinetics at deep-level defects in MBE-grown CdTe layers

    NASA Astrophysics Data System (ADS)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Kret, Slawomir; Kolkovsky, Valery; Karczewski, Grzegorz

    2011-04-01

    The results of deep-level transient spectroscopy (DLTS) investigations in n-type CdTe layers grown by the molecular-beam epitaxy (MBE) technique on lattice-mismatched GaAs substrates are described. Three electron traps and one hole trap, at rather low concentrations of the order of 1013 cm-3, have been revealed in the DLTS spectra measured under various bias conditions of Schottky diodes prepared on the as-grown CdTe layers. One of the electron traps has been attributed to electron states of dislocations on the ground of the logarithmic capture kinetics for capture of electrons into the trap states. The other three traps, displaying exponential capture kinetics, have been attributed to native point defects produced during the epitaxial growth of CdTe. The microscopic nature of the defects responsible for the traps is discussed taking into account recent results of first-principles calculations of the properties of dominant native defects in CdTe.

  10. MBE growth of active regions for electrically pumped, cw-operating GaSb-based VCSELs

    NASA Astrophysics Data System (ADS)

    Kashani-Shirazi, K.; Bachmann, A.; Boehm, G.; Ziegler, S.; Amann, M.-C.

    2009-03-01

    Electrically pumped, cw-operating, single-mode GaSb-based VCSELs are attractive light sources for trace-gas sensing systems using tunable diode laser absorption spectroscopy (TDLAS) [A. Vicet, D.A. Yarekha, A. Pérona, Y. Rouillard, S. Gaillard, Spectrochimica Acta Part A 58 (2002) 2405-2412]. Only recently, the first electrically pumped (EP) devices emitting at 2.325 μm in cw-mode at room temperature have been reported [A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, M.-C. Amann, Electronics Letters 44(3) (2008) 202-203]. The fabrication of these devices employs the molecular beam epitaxy (MBE) growth of GaSb/AlAsSb-distributed Bragg mirrors, a multi-quantum-well active region made of AlGaAsSb/InGaAsSb and an InAsSb/GaSb-buried-tunnel junction. As VCSELs are usually driven under high injection rates, an optimum electrical design of active regions is essential for high-performance devices. In this paper we present an enhanced simulation of current flow in the active region under operation conditions. The calculation includes carrier transport by drift, diffusion and tunneling. We discuss different design criteria and material compositions for active regions. Active regions with various barrier materials were incorporated into edge emitter samples to evaluate their performance. Aluminum-containing barriers show better internal efficiency compared to active regions with GaSb as the barrier material.

  11. On the Phase Shift of RHEED Intensity Oscillation during Homoepitaxy by MBE

    NASA Astrophysics Data System (ADS)

    Shin, B.; Leonard, J. P.; McCamy, J. W.; Aziz, M. J.

    2006-03-01

    Despite the widespread usage of RHEED over many years, there still remain fundamental questions unanswered with regard to the interpretation of RHEED measurements. One of these issues is the phase shift of the RHEED intensity oscillations upon changing the incidence angle of electron beams. Therefore, we have conducted a systematic investigation of the phase shift of the RHEED intensity oscillations during homoepitaxy of Ge(001) by MBE for a wide range of diffraction conditions. Our results show that for small incidence angles with a beam azimuth several degrees away from crystallographic symmetry directions, the phase stays the same; it starts to shift once the (004) Kikuchi line appears in the RHEED pattern. Moreover, under some conditions we observe the oscillations from only the Kikuchi feature and not from the specular spot, and the oscillatory behavior of the Kikuchi feature is almost out of phase with that of the specular spot. All these results convincingly demonstrate that the phase shift is caused by the interference of the specular spot by the Kikuchi features. The lesson that can be learned from our study is that in order to use the RHEED specular intensity oscillation to learn about surface morphology, one must be extremely careful that the RHEED measurements be conducted under conditions where the influence of the Kikuchi features is minimal.

  12. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  13. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  14. MBE growth and characterization of TlInGaAsN double quantum well structures

    NASA Astrophysics Data System (ADS)

    Krishnamurthy, D.; Shanthi, S.; Kim, K. M.; Sakai, Y.; Ishimaru, M.; Hasegawa, S.; Asahi, H.

    2009-03-01

    In the pursuit of reducing the temperature dependence of the emission wavelengths of devices, TlInGaAsN double quantum well (DQW) structures with different barriers grown on GaAs substrates by molecular beam epitaxy (MBE) were investigated. Higher Tl incorporation, a key parameter to reduce temperature dependence, could be obtained in the TlGaAsN barrier samples. However, the presence of many dislocations and very rough interfaces together with phase separation reduced the photoluminescence (PL) characteristics. DQW structures with combined barriers of TlGaAsN+TlGaAs+TlGaAsN and those consisting of TlGaAsN with reduced N composition showed improved crystalline characteristics. The (2 2 4) reciprocal space maps of these two samples did not show any diffraction corresponding to phase segregation. However, cross-sectional transmission electron microscopy (X-TEM) images revealed the presence of inhomogeneity (i.e., the presence of nearly perfect regions with good interfaces as well as regions with rough interfaces) in these samples.

  15. Characterization of ZnSe homo-interface grown by MBE

    NASA Astrophysics Data System (ADS)

    Nakanishi, F.; Doi, H.; Yamada, T.; Matsuoka, T.; Nishine, S.; Matsumoto, K.; Shirakawa, T.

    1997-06-01

    A ZnSe homo-interface, which was formed by MBE, was characterized. First, when the unetched ZnSe substrates were used, 3D-nucleation occurred, which suggested the remnant of the heterogeneous nuclei. Consequently, the interface layer was clearly visible and as high as 10 8 cm -2 crystal defects, such as dislocations and stacking faults, were observed by cross sectional TEM. The EPD was uncountable at this high defect density. Second, when the substrates were chemically etched, 2D-nucleation was confirmed by RHEED, and interface layer and defects were not observed by cross sectional TEM. However plan-view TEM and EPD revealed that about 10 6-10 7 cm -2 crystal defects were observed. To clarify the origin of the crystal defects at the homo-interface, SIMS analysis was performed and the results showed the pile up of oxygen at the interface, and the EPD was proportional to the intensity of the O signal. Finally, the reduction of the oxide layer after the chemical etching was tried using various reagents. The reconstruction pattern of the RHEED was observed at lower temperatures using HCl solution and the EPD was lowered near the level of the ZnSe substrates, 10 4-10 5 cm -2

  16. Accelerator research on MBE-4, an experimental multi-beam induction linac

    SciTech Connect

    Meuth, H.; Fessenden, T.J.; Keefe, D.; Warwick, A.I.

    1988-06-01

    The multiple beam accelerator MBE-4 is a device for research toward a heavy ion driver for inertial confinement fusion, based on the induction linac concept. Its main goal is proof of the principle of current amplification by acceleration and controlled self-similar beam pulse compression. Into the 16-m long device four beams, each with an initial current of 10 mA are injected from a Marx-driven diode at 200 keV. The current amplification is up to nine-fold, with a final beam energy of about 800 keV in the middle of the bunch. Now that all the apparatus' accelerator sections have been completed, installed and aligned, and its unaccelerated transport properties have been studied, our experimental research has reached the crucial phase of implementing appropriate accelerator schedules that approximate self-similar current-pulse compression. These schedules are established through a close interplay of computations using a one-dimensional simulation code and a manual empirical tuning procedure. In a first approach, with a rather vigorous schedule that uses most of the accelerator modules to their voltage limits, we have determined the limits of our capability for controlled pulse compression, mainly due to waveform shaping of the driving pulse-forming networks. We shall report on these results. In the future, we will also aim for gentler schedules that would model more closely an inertial confinement fusion scenario. 8 refs., 11 figs., 1 tab.

  17. IMPORTANCE OF IN SITU MONITORS IN THE PREPARATION OF LAYERED OXIDE HETEROSTRUCTURES BY REACTIVE MBE.

    SciTech Connect

    Schlom, Darrell G.; Haeni, J. H.; Theis, C. D.; Tian, W.; Pan, X. Q.; Brown, G. W.; Hawley, M. E.

    2001-01-01

    Using a variety of in situ monitors and when possible adsorption-controlled growth conditions, layered oxide heterostructures including new compounds and metastable superlattices have been grown by reactive molecular beam epitaxy (MBE). The heteroepitaxial layers grown include Bi{sub 4}Ti{sub 3}O{sub 12}-SrTiO{sub 3} and Bi{sub 4}Ti{sub 3}O{sub 12}-PbTiO{sub 3} Aurivillius phases, Sr{sub n+1}Ti{sub n}O{sub 3n+1} Ruddlesden-Popper phases, and metastable PbTiO{sub 3}/SrTiO{sub 3} and BaTiO{sub 3}/SrTiO{sub 3} superlattices. Accurate composition control is key to the controlled growth of such structures, and to this end combinations of reflection high-energy electron diffraction (RHEED), atomic absorption spectroscopy (AA), a quartz crystal microbalance (QCM), and adsorption-controlled growth conditions were employed during growth. The structural perfection of the films has been investigated using in situ RHEED, four-circle x-ray diffraction, atomic force microscopy (AFM), and high-resolution transmission electron microscopy (TEM).

  18. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    NASA Astrophysics Data System (ADS)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-10-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  19. Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Faraone, L.

    2016-09-01

    Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy.

  20. Self-regulating MBE growth of stoichiometric BaSnO3 films via reactive radical mechanism

    NASA Astrophysics Data System (ADS)

    Prakash, Abhinav; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat

    Growth of thin films comprising of element with low oxidation potential such as Sn often requires reactive oxidants such as ozone or high-pressure oxygen plasma. By utilizing the chemistry of highly reactive radical of Sn, we will present on the growth of phase-pure, epitaxial BaSnO3 films using a hybrid molecular beam epitaxy (MBE) approach with scalable growth rates. The notable finding was that Sn radicals are very reactive to yield phase-pure BaSnO3 films even in molecular oxygen. In this approach, we use hexamethylditin (HMDT) as a tin source, a solid effusion cell for Ba and either molecular oxygen or an rf oxygen plasma source. Phase-pure BaSnO3 films were grown at 900 0C, and oxygen pressure of 5x10-6 Torr as a function Sn:Ba ratio. In-situ time-dependent RHEED intensity oscillations were observed establishing a layer-by-layer growth mode and a critical thickness of ~1 nm for strain relaxation. Rutherford backscattering spectrometry and lattice constant determined using high-resolution X-ray diffraction was used to optimize cation stoichiometry. ``MBE growth window'' was identified where films show bulk-like lattice parameter (4.116 Å) over a wide-range of cation flux ratios. A correlation between RHEED patterns, stoichiometry, and surface morphology was established This work is supported primarily by NSF (DMR-1410888).

  1. Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi₂Te₃ Surfaces under Ambient Conditions.

    PubMed

    Macedo, Rita J; Harrison, Sara E; Dorofeeva, Tatiana S; Harris, James S; Kiehl, Richard A

    2015-07-01

    The local electrical characteristics on the surface of MBE-grown Bi2Te3 are probed under ambient conditions by conductive atomic force microscopy. Nanoscale mapping reveals a 10-100× enhancement in current at step-edges compared to that on terraces. Analysis of the local current-voltage characteristics indicates that the transport mechanism is similar for step-edges and terraces. Comparison of the results with those for control samples shows that the current enhancement is not a measurement artifact but instead is due to local differences in electronic properties. The likelihood of various possible mechanisms is discussed. The absence of enhancement at the step-edges for graphite terraces is consistent with the intriguing possibility that spin-orbit coupling and topological effects play a significant role in the step-edge current enhancement in Bi2Te3.

  2. Surface Properties of SiC Layer Grown by Molecular Beam Epitaxy (MBE) with Helicon Sputtering Molecular Beam Source

    NASA Astrophysics Data System (ADS)

    Kakuta, Akira; Moronuki, Nobuyuki; Furukawa, Yuji

    Although there have been some attempts to produce a monocrystalline silicon carbide (SiC) flat surface, the surface properties, such as surface roughness, have not satisfied the required specifications. In this study, we apply a helicon sputtering device to molecular beam epitaxy (MBE) to improve those properties. The helicon sputtering device was used as a molecular beam source for generating a Si molecular beam, where the electric field caused by the helicon coil supplied energy to the sputtered Si molecules. The amount of energy was controlled by the electric power applied to the coil. High-purity acetylene gas was used as the carbon (C) molecular beam source. The substrate was a monocrystalline (111) Si wafer. With the increase of the electric power, that is, the supply of high energy to molecules, the roughness of the surface was improved. A uniform mirror surface of monocrystalline SiC was produced over the entire substrate with a roughness of 1nm (Ra) order.

  3. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  4. Novel InGaAs contact layer growth for hetero-junction bipolar transistors (HBTs) by using the multiple group-V source molecular beam epitaxy (MBE) system

    NASA Astrophysics Data System (ADS)

    Kadoiwa, Kaoru; Izumi, Shigekazu; Yamamoto, Yoshitsugu; Hayafuji, Norio; Sonoda, Takuji

    1999-05-01

    Dependence of layer surface morphology and electrical properties on growth conditions, growth temperature and supplying conditions of group-V sources such as solid-As and AsH 3 hydride gas, has been investigated with specially designed MBE system, including both solid-As source cell and gas source cracking cell, for highly lattice-mismatched (+4%) In 0.5Ga 0.5As layer grown on GaAs. We demonstrate that utilizing of AsH 3 hydride source enables us to obtain a superior smooth surface in comparison with utilizing solid-As source. The HAZE level for the former source is reduced to one twentieth of the latter. The advantage of gas-source MBE (GS-MBE) method (hydrogen effect) was realized as suppressing In segregation. The effective hydrogen comes from AsH 3 hydride that acts as the surfactant that controls coherent small 3D islands formation during initial growth stage. The optimized GS-MBE growth method, under AsH 3 flow rate of 3 SCCM and growth temperature of 470°C, establishes that the In xGa 1- xAs ( x=0.6) layer grown on GaAs with the surface is as smooth as the surface of GaAs substrate, and also shows the contact resistance to be 4×10 -8 Ω cm 2. This value is well-fitted for nonalloy ohmic contact by using W/Si as emitter electrodes for HBTs.

  5. High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

    2005-01-01

    III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

  6. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

    PubMed Central

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-01-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates. PMID:27101930

  7. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    PubMed

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-22

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  8. A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth

    NASA Astrophysics Data System (ADS)

    Martinez, Rebecca; Tybjerg, Marius; Flint, Patrick; Fastenau, Joel; Lubyshev, Dmitri; Liu, Amy W. K.; Furlong, Mark J.

    2016-05-01

    Gallium Antimonide (GaSb) is an important Group III-V compound semiconductor which is suitable for use in the manufacture of a wide variety of optoelectronic devices such as infra-red (IR) focal plane detectors. A significant issue for the commercialisation of these products is the production of epitaxy ready GaSb, which remains a challenge for the substrate manufacturer, as the stringent demands of the MBE process, requires a high quality starting wafer. In this work large diameter GaSb crystals were grown by the Czochralski (Cz) method and wafers prepared for chemo-mechanical polishing (CMP). Innovative epi-ready treatments and novel post polish cleaning methodologies were applied. The effect of these modified finishing chemistries on substrate surface quality and the performance of epitaxially grown MBE GaSb IR detector structures were investigated. Improvements in the lowering of surface defectivity, maintaining of the surface roughness and optimisation of all flatness parameters is confirmed both pre and post MBE growth. In this paper we also discuss the influence of bulk GaSb quality on substrate surface performance through the characterisation of epitaxial structures grown on near zero etch pit density (EPD) crystals. In summary progression and development of current substrate polishing techniques has been demonstrated to deliver a consistent improved surface on GaSb wafers with a readily desorbed oxide for epitaxial growth.

  9. Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

    NASA Technical Reports Server (NTRS)

    Wu, Liangjin; Iyer, Shanthi; Nunna, Kalyan; Bharatan, Sudhakar; Li, Jia; Collis, Ward J.

    2005-01-01

    In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

  10. Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

    NASA Astrophysics Data System (ADS)

    Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

    Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

  11. Preliminary report on the MBE-4, an experimental multiple-beam induction linear accelerator for heavy ions

    SciTech Connect

    Warwick, A.I.; Gough, D.E.; Meuth, H.

    1988-11-01

    A small-scale experimental accelerator called MBE-4 has been constructed to demonstrate the principle of a current-amplifying induction linac for multiple beams of heavy ions. Four beams of Cs{sup 1+}, initially at 200 keV and each with a current of 10 mA have been accelerated and amplified to a kinetic energy of 700 keV and currents of 90 mA apiece. Transverse focusing is achieved by means of electrostatic quadrupoles; longitudinally the current is amplified and the beam bunch is held together against the space charge forces by special time-dependent accelerating fields. We report on the methods developed for designing and implementing the accelerating pulses and on measurements of the transverse and longitudinal emittance of the accelerated beams. Current fluctuations and the longitudinal emittance are initially almost zero and increase as acceleration errors are accumulated. We discuss the final longitudinal emittance and the current fluctuations in the experiment in terms of their acceptability for a large heavy-ion-fusion driver. 17 refs., 23 figs., 3 tabs.

  12. Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Jaime Vasquez, M.; Lennon, C. M.; Nozaki, C.; Almeida, L. A.; Pellegrino, J.; Arias, J.; Taylor, C.; Wissman, B.

    2015-09-01

    Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on large area, low-cost composite substrates, such as CdTe-buffered Si or GaAs, are envisioned for next-generation IRFPAs. Thermal expansion mismatch is among various material parameters that govern the structural properties of the final detector layer. It has previously been shown that thermal expansion mismatch plays the dominant role in the residual stress characteristics of these heteroepitaxial structures (Jacobs et al. in J Electron Mater 37:1480, 2008). The wafer curvature (bowing) resulting from residual stress, is a likely source of problems that may occur during subsequent processing. This includes cracking of the film and substrate during post-growth annealing processes or even certain characterization techniques. In this work, we examine dynamic curvature and stress during molecular beam epitaxy (MBE), of CdTe on Si and GaAs substrates. The effect of temperature changes on wafer curvature throughout the growth sequence is documented using a multi-beam optical sensor developed by K-Space Associates. This monitoring technique makes possible the study of growth sequences which employ annealing schemes and/or interlayers to influence the final residual stress state of the heteroepitaxial structures.

  13. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

    NASA Astrophysics Data System (ADS)

    Jantawongrit, P.; Sanorpim, S.; Yaguchi, H.; Orihara, M.; Limsuwan, P.

    2015-08-01

    InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g=11\\bar{2}0 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. Project supported by the Thailand Center of Excellence in Physics (ThEP) and the King Mongkut's University of Technology Thonburi under The National Research University Project. One of the authors (S. Sanorpim) was supported by the National Research Council of Thailand (NRCT) and the Thai Government Stimulus Package 2 (TKK2555), under the Project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture.

  14. Surface sulfurization on MBE-grown Cu(In1-x,Gax)Se2 thin films and devices

    NASA Astrophysics Data System (ADS)

    Khatri, Ishwor; Matsuyama, Isamu; Yamaguchi, Hiroshi; Fukai, Hirofumi; Nakada, Tokio

    2015-08-01

    Molecular beam epitaxy (MBE) grown Cu(In1-x,Gax)Se2 (CIGS) thin films were sulfurized at temperatures of 450-550 °C for 30 min in a 10% H2S-N2 mixture gas. The micro-roughness together with the S diffusion in the CIGS surfaces increased with increasing sulfurization temperature. Both near-band-edge PL intensity and decay time of the CIGS absorber layer enhanced after sulfurization. PL sub-peak around 80 meV below the main peak almost disappeared after sulfurization above 500 °C, which is expected due to the occupation of Se vacancies (Vse) with S. The open-circuit voltage (Voc), hence conversion efficiency, improved after sulfurization. The photovoltaic performance of the solar cells was consistent with PL intensity. Moreover, it is found for the first time from the SIMS analysis that the Cu atoms were depleted at the surface of CIGS layer after sulfurization, which could result in the improved Voc.

  15. Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE.

    PubMed

    Jerng, Sahng-Kyoon; Joo, Kisu; Kim, Youngwook; Yoon, Sang-Moon; Lee, Jae Hong; Kim, Miyoung; Kim, Jun Sung; Yoon, Euijoon; Chun, Seung-Hyun; Kim, Yong Seung

    2013-11-01

    Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on an amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by the van der Waals epitaxy mechanism. A weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows a modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on an amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

  16. Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements. [during MBE of GaAs and InAs

    NASA Technical Reports Server (NTRS)

    Lewis, B. F.; Fernandez, R.; Grunthaner, F. J.; Madhukar, A.

    1986-01-01

    A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

  17. Synthesis and characterizations of nanoscale single crystal GaN grown by ion assisted gas source MBE

    NASA Astrophysics Data System (ADS)

    Cui, Bentao; Cohen, P. I.

    2004-03-01

    Nanoscale patterns could be induced by ion bombardment [1, 2]. In this study, an in-situ real time light scattering technique, combined with Reflection High Energy Electron Diffraction (RHEED), were used to study the surface morphology evolution during the ion beam assisted growth of GaN in a gas source MBE system. Ga was provided by a thermal effusion cell. Ammonia was used as the nitrogen source. A hot-filament Kaufman ion source was used to supply sub-KeV ion beams. Sapphire and MOCVD GaN templates were used as the substrates. A custom-designed Desorption Mass Spectrometer (DMS) was used to calibrate the growth temperature and determine the growth rate. Before growing GaN, the sapphire substrates were pretreated in an ion flux and then annealed for cleaning. The sapphire surface was then nitrided in ammonia at 1100K for about 10 min. After nitridation, a thin GaN buffer layer was prepared by a sequence of adsorption and annealing steps. During the growth, the short-range surface morphology and film quality were monitored in situ by RHEED. In a real-time way, the long-range surface morphology was monitored in-situ by light scattering technique. Photodiode array detector and CCD camera were used to record the reflected light scattering intensity and spectra profile respectively. Periodical patterns, such as ripple, have been observed during ion bombardment on GaN with or without growth. A linear theory (from Bradley and Harper 1988 [3]) has been modified to explain the dependence of ripple wavelength on ion species and ion energy. Partially supported by the National Science Foundation and the Air Force Office of Scientific Research. [1]. J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 82, 2330 (1998); J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 84, 5800 (2000). [2]. S. Facsko, T. Dekorsy, C. Koerdt, C. Trappe, H. Kurz, A. Vogt et al.. Science 285, 1551 (1999). [3]. R. M. Bradley

  18. High Resolution X-ray Diffraction Studies of MBE-Grown HgCdTe Layers on Bulk-Grown CdZnTe Substrate

    NASA Astrophysics Data System (ADS)

    Amarasinghe, Priyanthi M.; Qadri, Syed B.; Wijewarnasuriya, Priyalal S.

    2015-08-01

    The structural properties of molecular beam epitaxially (MBE)-grown Hg1- x Cd x Te epilayers on CdZnTe (211) substrate have been investigated using high-resolution x-ray topography and rocking curves. High-resolution x-ray diffraction 2 θ- θ scans of (422) reflections were utilized in calculating the out-of-plane lattice parameters of the HgCdTe layer and the CdZnTe substrate. The lattice strain of the HgCdTe layer was evaluated using the in-plane measurements of the (311) reflection. Etching seemed to improve the surface of the substrate by removing any damage caused by polishing or any post-processing. In spite of some localized line dislocations, a remarkable quality of the MBE-grown HgCdTe layer was observed. The full width at half maximum values of the HgCdTe layer and the CdZnTe substrate were determined as 43 arc-s and 16.2 arc-s, respectively.

  19. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  20. Intrinsic and interfacial recombination in OMVPE- and MBE-prepared GaAs/Al[sub x]Ga[sub 1-x]As heterostructures

    SciTech Connect

    Gilliland, G.D.; Wolford, D.J.; Kuech, T.F.; Bradley, J.A. . Thomas J. Watson Research Center); Klem, J.; Hjalmarson, H.P. )

    1993-01-01

    We have studied intrinsic free-carrier recombination in a variety of GaAs structures, including: OMVPE- and MBE-prepared GaAs/Al[sub x]Ga[sub 1-x]As double heterostructures, Na[sub 2]S passivated GaAs structures and bare GaAs structures. We find OMVPE prepared structures are superior to all of these other structures with 300 K lifetimes of [approximately] 2.5 [mu]s and negligible nonradiative interface and bulkrecombination, and thus are truly surface-free (S < 40 cm/s). Moreover, we observe systematic trends in optical properties versus growth conditions. Lastly, we find that the presence of free-exciton recombination in the low-temperature photoluminescence spectra is a necessary but not sufficient condition for optimal optical properties (i.e. long minority-carrier lifetimes).

  1. Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

    NASA Astrophysics Data System (ADS)

    X, Z. Liu; C, Yue; C, T. Xia; W, L. Zhang

    2016-01-01

    High-resistivity β-Ga2O3 thin films were grown on Si-doped n-type conductive β-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6× 106 Ω. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 × 1018 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 × 102% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga2O3 thin films and the n-type conductive β-Ga2O3 single-crystal substrate. Project supported by the National Nature Science Foundation of China (Grant No. 61223002) the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13111103700), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2012018530003).

  2. Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (˜9.4 μm) room temperature operating quantum-cascade lasers

    NASA Astrophysics Data System (ADS)

    Kosiel, K.; Kubacka-Traczyk, J.; Sankowska, I.; Szerling, A.; Gutowski, P.; Bugajski, M.

    2012-09-01

    In order to adjust the highly controllable and optimum growth conditions, the multi-step interrupted-growth MBE processes were performed to deposit a series of GaAs/Al0.45Ga0.55As QCL structures. The additional calibrations of MBE system were carried out during the designed growth interruptions. This solution was combined with a relatively low growth rate of active region layers, in order to suppress the negative effects of elemental flux instabilities. As a result, the fabricated QCL structures have yielded devices operating with peak optical power of ˜12 mW at room temperature. That is a better result than was obtained for comparable structures deposited with a growth rate kept constant, and with the only initial calibrations performed just before the epitaxy of the overall structure.

  3. Lattice-engineered MBE growth of high-indium mole fraction InGaAs for low cost MMICs and (1.3--1.55 {micro}m) OEICs

    SciTech Connect

    Childs, T.T.; Sokolov, V.; Sullivan, C.T.

    1997-11-01

    Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 {micro}m wavelength range and monolithic microwave (or mm-wave) integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors (HEMTs) for application in MMICs. Several examples of active and passive photonic devices grown by MBE are presented including an optical ridge waveguide, and a photodetector for detection of light in the 1.3 {micro}m range. The material structure includes a 3-layer AlGaAs/GaAs/AlGaAs optical waveguide and a thin InGaAs absorbing layer situated directly above the optical waveguide. Metal-semiconductor-metal (MSM) photodetectors are formed on the top surface of the InGaAs layer for collection of the photo-induced carriers. The optical ridge waveguide is designed for lateral incidence of the light to enhance the MSM photodetector responsivity. Initial measurements on the optical waveguide and photodetector are presented.

  4. Use of a High-flux Atomic Oxygen Source for MBE growth of the di- and tri- oxides of Cr, Mo, and W

    NASA Astrophysics Data System (ADS)

    Ingle, Nicholas; Hammond, Robert; Beasley, Malcolm

    2000-03-01

    The MBE growth of several of the highly oxidized phases of the Group IIB elements (Cr, Mo, and W) are of great current interest. In particular, CrO_2, a theorized half-metallic ferromagnet, has yet to be grown in a form that allows high quality tunneling measurements to be performed. Also, thin films of WO3 for controlled Na doping studies are of interest to help understand the recently published results on possible superconductivity in this material(S. Reich and Y. Tsabba, EUROPEAN PHYSICAL JOURNAL B v. 9(1) pp. 1-4 MAY 1999 and Shengelaya A, Reich S, Tsabba Y, and Muller KA EUROPEAN PHYSICAL JOURNAL B , v. 12(1) pp. 13-15 NOV 1999). Using a new high-flux atomic oxygen source and detection scheme, RHEED, and in-situ core-level photoemission we present the atomic oxygen-temperature phase diagrams indicating the conditions under which the di- and tri- oxide phases of Cr, Mo, and W can be grown.

  5. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

    SciTech Connect

    Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.; Coldea, A. I.; Hesjedal, T.; Baker, A. A.; Harrison, S. E.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Laan, G. van der

    2014-12-15

    We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  6. The long noncoding RNAs PVT1 and uc002mbe.2 in sera provide a new supplementary method for hepatocellular carcinoma diagnosis

    PubMed Central

    Yu, Jinyu; Han, Junqing; Zhang, Jian; Li, Guanzhen; Liu, Hui; Cui, Xianping; Xu, Yantian; Li, Tao; Liu, Juan; Wang, Chuanxi

    2016-01-01

    Abstract Hepatocellular carcinoma (HCC) is the most common primary malignancy of the liver in adults worldwide. Several studies have demonstrated that long noncoding RNAs (lncRNAs) are involved in the development of various types of cancer, including HCC. These findings prompted us to examine the detectability of lncRNAs in blood samples from patients with HCC. In this study, we explored the expression levels of 31 cancer-related lncRNAs in sera from 71 HCC patients and 64 healthy individuals by reverse transcription and quantitative polymerase chain reaction (RT-qPCR). We found that 25 lncRNAs could be detected in the serum and that 7 had significantly different expression levels. A 2-lncRNA signature (PVT1 and uc002mbe.2) identified by stepwise regression showed potential as a diagnostic marker for HCC. The area under the receiver operating characteristic (ROC) curve was 0.764 (95% CI: 0.684–0.833). The sensitivity and specificity values of this serum 2-lncRNA signature for distinguishing HCC patients from the healthy group were 60.56% and 90.62%, respectively. The diagnostic ability of the combination of the serum 2-lncRNA signature with alpha-fetoprotein (AFP) was much greater than that of AFP alone. The expression levels of the 2 lncRNAs were associated with clinical parameters including tumor size, Barcelona Clinic Liver Cancer (BCLC) stage, and serum bilirubin. PMID:27495068

  7. The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE

    NASA Astrophysics Data System (ADS)

    Prakash, Nisha; Anand, Kritika; Barvat, Arun; Pal, Prabir; Singh, Dilip K.; Jewariya, Mukesh; Ragam, Srinivasa; Adhikari, Sonachand; Maurya, Kamlesh K.; Khanna, Suraj P.

    2016-04-01

    In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-probe spectroscopy measurements have been carried out to characterize the samples. The effect of RF-plasma power towards unintentional doping and giving rise to yellow luminescence (YL) is discussed. Our PC measurements show relatively faster decay for sample grown with higher RF-plasma power. In addition, the ultrafast optical pump-probe spectroscopy results show the presence of various defect levels with different relaxation times. A faster ultrafast relaxation time from the conduction band to the closest defect level and conduction band to the next defect level was observed for the sample grown with higher plasma power. A comparatively low defect density and faster carrier relaxation observed in higher RF-plasma power grown samples is caused by lower impurities and gallium vacancies. The results imply that RF-plasma power is very important parameter for the growth of epitaxial GaN films and undesirable impurities and gallium vacancies might get incorporated in the epitaxial GaN films.

  8. The long noncoding RNAs PVT1 and uc002mbe.2 in sera provide a new supplementary method for hepatocellular carcinoma diagnosis.

    PubMed

    Yu, Jinyu; Han, Junqing; Zhang, Jian; Li, Guanzhen; Liu, Hui; Cui, Xianping; Xu, Yantian; Li, Tao; Liu, Juan; Wang, Chuanxi

    2016-08-01

    Hepatocellular carcinoma (HCC) is the most common primary malignancy of the liver in adults worldwide. Several studies have demonstrated that long noncoding RNAs (lncRNAs) are involved in the development of various types of cancer, including HCC. These findings prompted us to examine the detectability of lncRNAs in blood samples from patients with HCC. In this study, we explored the expression levels of 31 cancer-related lncRNAs in sera from 71 HCC patients and 64 healthy individuals by reverse transcription and quantitative polymerase chain reaction (RT-qPCR). We found that 25 lncRNAs could be detected in the serum and that 7 had significantly different expression levels. A 2-lncRNA signature (PVT1 and uc002mbe.2) identified by stepwise regression showed potential as a diagnostic marker for HCC. The area under the receiver operating characteristic (ROC) curve was 0.764 (95% CI: 0.684-0.833). The sensitivity and specificity values of this serum 2-lncRNA signature for distinguishing HCC patients from the healthy group were 60.56% and 90.62%, respectively. The diagnostic ability of the combination of the serum 2-lncRNA signature with alpha-fetoprotein (AFP) was much greater than that of AFP alone. The expression levels of the 2 lncRNAs were associated with clinical parameters including tumor size, Barcelona Clinic Liver Cancer (BCLC) stage, and serum bilirubin. PMID:27495068

  9. The MBE growth and optical quality of BaTiO{sub 3} and SrTiO{sub 3} thin films on MgO

    SciTech Connect

    McKee, R.A.; Specht, E.D.; Alexander, K.B.; Walker, F.J.

    1994-05-01

    High quality epitaxial BaTiO{sub 3} and SrTiO{sub 3} have been grown on MgO; stabilized at a one unit cell height; and grown to film thicknesses of 0.5--0.7 {mu}m. These relatively thick films remain adherent when thermally cycled between growth temperatures and room temperature, are crack free with high optical quality, and have both in-plane and out-of-plane X-ray rocking curves of 0.3--0.5{degree}. These films have been grown using molecular beam epitaxy (MBE) methods starting with the TiO{sub 2} layer of the perovskite structure. The TiO{sub 2}-layer/MgO interface uniquely satisfies electrostatic requirements for perovskite heteroepitaxy and provides the template structure that leads to the high quality films that are obtained. Wavelength dependence of optical loss has been characterized between 475 nm and 705 nm with loss coefficients < l dB/cm being obtained at the He-Ne wavelength.

  10. Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

    NASA Astrophysics Data System (ADS)

    Petrushkov, M. O.; Putyato, M. A.; Gutakovsky, A. K.; Preobrazhenskii, V. V.; Loshkarev, I. D.; Emelyanov, E. A.; Semyagin, B. R.; Vasev, A. V.

    2016-08-01

    GaAs films with low-temperature GaAs (LT-GaAs) layers were grown by molecular beam epitaxy (MBE) method on vicinal (001) Si substrates oriented 6° off towards [110]. The grown structures were different with the thickness of LT-GaAs layers and its arrangement in the film. The processes of epitaxial layers nucleation and growth were controlled by reflection high energy electron diffraction (RHEED) method. Investigations of crystalline properties of the grown structures were carried out by the methods of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The crystalline perfection of the GaAs films with LT-GaAs layers and the GaAs films without ones was comparable. It was found that in the LT- GaAs/Si layers the arsenic clusters are formed, as it occurs in the LT-GaAs/GaAs system without dislocation. It is shown that large clusters are formed mainly on the dislocations. However, the clusters have practically no effect on the density and the propagation path of threading dislocations. With increasing thickness of LT-GaAs layer the dislocations are partly bent along the LT-GaAs/GaAs interface due to the presence of stresses.

  11. Magnetism and Nanoscale Structural and Compositional Irregularities in MBE-grown La2MnNiO6 on SrTiO3(001)

    NASA Astrophysics Data System (ADS)

    Chambers, Scott; Du, Yingge; Droubay, Timothy; Sushko, Peter; Spurgeon, Steven; Devaraj, Arun; Bowden, Mark; Shutthanandan, V.; Gustafsson, Torgny

    Double perovskites (A2BB'O6) are a fascinating class of oxides with considerable potential for applications requiring ferromagnetic and semiconducting properties. We have investigated MBE-grown La2MnNiO6 and have found that despite the fact that Mn and Ni are present as 4 + (d 3 : t2g 3eg0) and 2 + (d 8 : t2g 6eg2) respectively, and exhibit suitable XMCD signatures, the volume-averaged moment per formula unit is considerably less than 5 Bohr magnetons. Our electron energy loss spectroscopy (STEM-EELS) and atom probe tomography (APT) results to date reveal that there is considerable disorder in the B-site sublattice for as-deposited films, despite excellent volume-averaged stoichiometry. While air annealing results in substantial ordering, the moment remains low due to the nucleation of NiO inclusions with needle-like shapes revealed only by APT. First principles modeling suggests that even though the double perovskite is quite stable if nucleated in excess O, the presence of O vacancies facilitates structural disorder. In this talk, we will present our latest results on this fascinating material.

  12. Contribution of generation-recombination processes at inner interface of MBE-grown Hg1-xCdxTe heterostucture to dark current of small active area photodiode

    NASA Astrophysics Data System (ADS)

    Chekanova, Galina V.; Drugova, Albina A.; Kholodnov, Viacheslav; Nikitin, Mikhail S.

    2009-09-01

    Multilayer heterostructures of Hg1-xCdxTe alloy grown by Molecular Beam Epitaxy (MBE) on large size alternative substrates Si, GaAs and Ge are considered as one of productive alternative materials for issue of large format photovoltaic (PV) infrared (IR) focal plane arrays. However reaching of ultimate performance of small-pitched photodiode's (PD) covering spectral range from 8 to 12 μm depends on electronic properties of both individual layers and heterostructure interfaces. Due to small thickness of heterostructure layers, interfaces are located close to active regions of p-n junction and hence generation-recombination processes at interfaces will contribute to value of current flowing through junction. As usual measured dark current value of small-sized PD is higher than estimated from calculation and cannot be explained by discrepancy between real and estimated charge carriers concentration in absorption layers where p-n junction is formed. Objective of the present work was to calculate the contribution of recombination of charge carriers via electronic states on nearby inner interface to dark current of Hg1-xCdxTe LWIR PD (λco equals to 9.5-10.3 μm at Top=77 K) and its variation with absorption layer parameters and compare it to measured data on small-pitched arrays. We have concluded previously that at high recombination rate dark current can grow in orders of value.

  13. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    SciTech Connect

    Mahata, Mihir Kumar; Ghosh, Saptarsi; Jana, Sanjay Kumar; Bag, Ankush; Kumar, Rahul; Chakraborty, Apurba; Biswas, Dhrubes; Mukhopadhyay, Partha

    2014-11-15

    In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al{sub 2}O{sub 3}) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10{sup −3}(1 × 10{sup −3}), and −1.7 × 10{sup −3}(2 × 10{sup −3}) in GaN layer and 5.1 × 10{sup −3} (−3.3 × 10{sup −3}), and 8.8 × 10{sup −3}(−1.3 × 10{sup −3}) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.

  14. Controlling the compositional inhomogeneities in AlxGa1-xN/AlyGa1-yN MQWs grown by PA-MBE: Effect on luminescence properties

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, Anirban; Kumar, Deepak; Sridhara Rao, D. V.

    2016-04-01

    Al0.35Ga0.65N/Al0.55Ga0.45N MQWs were grown by PA-MBE using a range of group III/V flux ratios. TEM images indicate sharp interfaces and well/barrier widths of 1.5/2 nm. We observe that small variations of group III/V flux ratio cause dramatic variations in the room temperature photoluminescence (PL) spectra. In addition to band edge luminescence, multiple low energy PL peaks are observed for growths under excess group III conditions, which are absent for near-stoichiometric growth. Temperature dependent PL measurements indicate that at room temperature, emission occurs due to transitions at potential fluctuations generated by the presence of compositional inhomogeneity. These effects are dominant for growth under excess group III conditions due to the presence of a metallic layer on the growth surface during deposition. This can be eliminated by the use of an Indium surfactant during growth, which modifies the diffusion length of Ga and Al adatoms. Under these conditions, the optical properties of MQWs are relatively insensitive to variations in group III to V flux ratio and hence substrate temperature, thus making them suitable for industrial-scale fabrication of optoelectronic devices in the ultraviolet range.

  15. Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2-xTe3 thin films

    NASA Astrophysics Data System (ADS)

    Collins-McIntyre, L. J.; Duffy, L. B.; Singh, A.; Steinke, N.-J.; Kinane, C. J.; Charlton, T. R.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Holmes, S. N.; Barnes, C. H. W.; van der Laan, G.; Langridge, S.; Hesjedal, T.

    2016-07-01

    We report the structural, electronic, and magnetic study of Cr-doped Sb2Te3 thin films grown by a two-step deposition process using molecular-beam epitaxy (MBE). The samples were investigated using a variety of complementary techniques, namely, x-ray diffraction (XRD), atomic force microscopy, SQUID magnetometry, magneto-transport, and polarized neutron reflectometry (PNR). It is found that the samples retain good crystalline order up to a doping level of x=0.42 (in Cr x Sb2-x Te3), above which degradation of the crystal structure is observed by XRD. Fits to the recorded XRD spectra indicate a general reduction in the c-axis lattice parameter as a function of doping, consistent with substitutional doping with an ion of smaller ionic radius. The samples show soft ferromagnetic behavior with the easy axis of magnetization being out-of-plane. The saturation magnetization is dependent on the doping level, and reaches from ˜2 μ_\\text{B} to almost 3 μ_\\text{B} per Cr ion. The transition temperature (T{c}) depends strongly on the Cr concentration and is found to increase with doping concentration. For the highest achievable doping level for phase-pure films of x=0.42 , a T{c} of 125 K was determined. Electric transport measurements find surface-dominated transport below ˜10 K. The magnetic properties extracted from anomalous Hall effect data are in excellent agreement with the magnetometry data. PNR studies indicate a uniform magnetization profile throughout the film, with no indication of enhanced magnetic order towards the sample surface.

  16. Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2‑xTe3 thin films

    NASA Astrophysics Data System (ADS)

    Collins-McIntyre, L. J.; Duffy, L. B.; Singh, A.; Steinke, N.-J.; Kinane, C. J.; Charlton, T. R.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Holmes, S. N.; Barnes, C. H. W.; van der Laan, G.; Langridge, S.; Hesjedal, T.

    2016-07-01

    We report the structural, electronic, and magnetic study of Cr-doped Sb2Te3 thin films grown by a two-step deposition process using molecular-beam epitaxy (MBE). The samples were investigated using a variety of complementary techniques, namely, x-ray diffraction (XRD), atomic force microscopy, SQUID magnetometry, magneto-transport, and polarized neutron reflectometry (PNR). It is found that the samples retain good crystalline order up to a doping level of x=0.42 (in Cr x Sb2‑x Te3), above which degradation of the crystal structure is observed by XRD. Fits to the recorded XRD spectra indicate a general reduction in the c-axis lattice parameter as a function of doping, consistent with substitutional doping with an ion of smaller ionic radius. The samples show soft ferromagnetic behavior with the easy axis of magnetization being out-of-plane. The saturation magnetization is dependent on the doping level, and reaches from ∼2 μ_\\text{B} to almost 3 μ_\\text{B} per Cr ion. The transition temperature (T{c}) depends strongly on the Cr concentration and is found to increase with doping concentration. For the highest achievable doping level for phase-pure films of x=0.42 , a T{c} of 125 K was determined. Electric transport measurements find surface-dominated transport below ∼10 K. The magnetic properties extracted from anomalous Hall effect data are in excellent agreement with the magnetometry data. PNR studies indicate a uniform magnetization profile throughout the film, with no indication of enhanced magnetic order towards the sample surface.

  17. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    NASA Astrophysics Data System (ADS)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  18. Effects of MgO buffer annealing on optical and electrical quality of P-MBE grown ZnO films on c-sapphire

    NASA Astrophysics Data System (ADS)

    Setiawan, A.; Yao, T.

    2016-04-01

    Zinc oxide (ZnO) has been attracting much attention because of its potential applications in photonic and optoelectronic devices. In this present study, we investigated the effect of MgO buffer annealing on the optical and electrical quality of P-MBE grown ZnO films on c-sapphire with MgO buffer layer. The optical quality was observed by low-temperature PL (photoluminescence) measurement in the near band edge emission region measured at 10K and at 77K. The emission line located at 3.368eV dominates the spectrum in both samples (ZnO with and without MgO buffer annealing) at 10K and 77K. This emission can be divided into two peaks, 3.367eV and 3.363eV and assigned as I2 (ionized donor bound excitons emission) and I4 (Hydrogen donor related emission), respectively. The relative intensity of these donor bound exactions to free exaction emission of the sample without MgO buffer annealing is greater than that of the sample with MgO buffer annealing. Comparison of the PL spectra of ZnO with and without annealing revealed that the intensity of free exciton emission from the sample with MgO buffer annealing is twice of that from the sample without annealing. We also found that the intensity of deep-level broad emission is reduced by about 1/3 by MgO-buffer annealing. Hence, the decrease of deep level emission intensity and the increase of free exciton emission intensity by annealing of MgO buffer corresponds to the reduction of defects of the ZnO film. The PL properties also suggest that there are fewer nonradiative recombination centers in ZnO layers with MgO buffer annealing than those in ZnO layers grown without MgO buffer annealing. The electrical quality was measured by room temperature Hall measurements. We found that the samples have a background n-type carrier concentration. The ZnO samples with MgO buffer annealing has a carrier concentration of 1.17×1017 cm-3 and Hall mobility of 120 cm2/V.s, while the ZnO sample without MgO buffer annealing has a carrier

  19. Growth of carbon-doped base GaAs/AlGaAs HBT by gas-source MBE using TEG, TEA, TMG, AsH3, and Si2H6

    NASA Astrophysics Data System (ADS)

    Ando, Hideyasu; Fujii, Toshio; Sandhu, Adarsh; Takahashi, Tsuyoshi; Ishikawa, Hideaki; Okamoto, Naoya; Yokoyama, Naoki

    1992-05-01

    High-performance carbon-doped-base GaAs/AlGaAs heterobipolar transistors (HBTs) were grown by gas-source MBE using only gaseous sources including dopant sources. The AlGaAs emitter layer was doped with Si from uncracked SI2H6 and the base layer was doped with carbon from TMG. From SIMS analysis it was confirmed that a well-defined emitter-base junction with sharp carbon profile was obtained. The base-current ideality factor from the Gummel plot was 1.47, and the emitter-base junction ideality factor was 1.12. A high dc current gain of 53 was obtained at a current density of 4 x 10 exp 4 A/sq cm. The device characteristics of our carbon-doped HBTs were found to be stable under current stress.

  20. Capping and decapping of MBE grown GaAs(001), Al 0.5Ga 0.5As(001), and AlAs(001) investigated with ASP, PES, LEED, and RHEED

    NASA Astrophysics Data System (ADS)

    Bernstein, R. W.; Borg, A.; Husby, H.; Fimland, B.-O.; Grepstad, J. K.

    Arsenic capping and regeneration of MBE-grown GaAs(001), Al 0.5Ga 0.5As(001), and AlAs(001) epilayer surfaces were examined with Auger sputter profiling (ASP), synchrotron radiation and X-ray photoelectron spectroscopy (PES), LEED, and RHEED. It is found that clean, ordered surfaces of different As/Ga(Al) compositions and different surface reconstructions can be prepared in a controlled manner after long-term storage in air, by thermal desorption of the As cap at appropriate annealing temperatures. A protective film of amorphous arsenic was deposited in situ with both As 2 and As 4 molecular beams onto cold substrates. The recorded Auger depth profiles unveil capping layer thicknesses from 0.3 to 3 μm, the thicker for depositions using the As 2 dimer source. The As 3+ surface oxide, formed immediately upon exposure of the passivated wafers to air, remains on the order of 10Åthick, even after storage in atmosphere for several months. Core level photoemission shows selective desorption of this oxide upon annealing in UHV at 250°C. Further heating at 350°C evaporates the protective arsenic cap, and clean, As-terminated Al xGa 1- xAs(001) surfaces with a regular arrayof chemisorbed excess As sbnd As dimers prevail. The recorded LEED and RHEED patterns show a c(4 × 4) surface reconstruction for GaAs(001) and Al 0.5Ga 0.5As(001), whereas this structural phase was observed with RHEED only for the highly reactive AlAs(001) surface. Subsequently annealing in UHV at 450°C causes desorption of the chemisorbed surface arsenic and a concurrent transition from c(4 × 4) to the (2 × 4)/c(2 × 8) surface of As stabilized MBE-grown Al xGa 1- xAs(001). With AlAs(001), surface Al oxidation was observed immediately after annealing at 450°C, in spite of carefully controlled UHV environments

  1. Formation of self-organized quantum dot structures and quasi-perfect CuPt-type ordering by gas-source MBE growth of (GaP){sub n}(InP){sub n} superlattices

    SciTech Connect

    Kim, S.J.; Asahi, H.; Takemoto, M.; Asami, K.; Takeuchi, M.; Gonda, S.

    1996-12-31

    (GaP){sub n}(InP){sub n} short period superlattices (SLs) are grown on GaAs(N11) substrates by gas-source MBE. Transmission electron microscopy observations show that the SLs grown on GaAs(311)A and (411)A have dot structures with a size of about 10--20nm. Photoluminescence (PL) peak energies are greatly dependent on substrate orientation and monolayer number n. On the other hand, the (GaP){sub 1}(InP){sub 1} SLs grown on (111) have no composition modulation and have quasi-perfect CuPt-type ordering along the [111] growth direction. The PL peak energy is 321 meV lower than that of disordered InGaP alloy. Self-organized (GaP){sub n}(InP){sub m} SL(dot/barrier)/In{sub 0.49}Ga{sub 0.51}P(barrier) quantum dot structures exhibit strong 77K PL with a full width at half maximum of about 70 meV.

  2. Defects and stresses in MBE-grown GaN and Al{sub 0.3}Ga{sub 0.7}N layers doped by silicon using silane

    SciTech Connect

    Ratnikov, V. V. Kyutt, R. N.; Smirnov, A. N.; Davydov, V. Yu.; Shcheglov, M. P.; Malin, T. V.; Zhuravlev, K. S.

    2013-12-15

    The electric and structural characteristics of silicon-doped GaN and Al{sub 0.3}Ga{sub 0.7}N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 10{sup 20} cm{sup −3} with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al{sub 0.3}Ga{sub 0.7}N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 10{sup 19} cm{sup −3}. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al{sub 0.3}Ga{sub 0.7}N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.

  3. Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 μm laser structures on GaSb substrates

    NASA Astrophysics Data System (ADS)

    Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G.

    1999-05-01

    The incorporation of As and In during MBE growth in (AlGaIn)/(AsSb) layers used for the fabrication of diode lasers in the 2.0-2.5 μm wavelength range has been investigated. The As content was found to depend linearly on the beam equivalent pressure for As mole fractions between y=0.05 and y=0.20. Broad area AlGaAsSb/GaInAsSb single-quantum well laser diodes with quasi-cw output at room temperature at an emission wavelength of 2.03 μm and a threshold current density of 515 A/cm 2 for 1370 μm long and 70 μm wide devices have been fabricated. In order to shift the emission wavelength of the laser structures to longer wavelengths, the growth of lattice matched AlGaAsSb/GaInAsSb laser core structures with different In and As mole fractions in the quantum wells has been investigated.

  4. Corrosion protection of aerospace grade magnesium alloy Elektron 43(TM) for use in aircraft cabin interiors

    NASA Astrophysics Data System (ADS)

    Baillio, Sarah S.

    Magnesium alloys exhibit desirable properties for use in transportation technology. In particular, the low density and high specific strength of these alloys is of interest to the aerospace community. However, the concerns of flammability and susceptibility to corrosion have limited the use of magnesium alloys within the aircraft cabin. This work studies a magnesium alloy containing rare earth elements designed to increase resistance to ignition while lowering rate of corrosion. The microstructure of the alloy was documented using scanning electron microscopy. Specimens underwent salt spray testing and the corrosion products were examined using energy dispersive spectroscopy.

  5. 77 FR 64519 - Magnesium Elektron; Analysis of Agreement Containing Consent Orders To Aid Public Comment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-22

    ... debit card number. You are also solely responsible for making sure that your comment does not include.... (``MEL'') to remedy the anticompetitive effects stemming from MEL's acquisition of Revere...

  6. Investigations on the MBE (molecular beam epitaxy) growth and properties of Al/sub y/Ga/sub y/In/sub 1-x-y/As/InP and InGaAs-InAlAs superlattices: Progress report for the period May 15, 1986-January 31, 1987

    SciTech Connect

    Bhattacharya, P.K.; Gibala, R.

    1987-01-01

    Focus of the work has been to grow wide-bandgap ternary and quaternary semiconductors InAlAs and InGaAlAs by molecular beam epitaxy and to investigate their electronic, optical and structural characteristics. The techniques being used are x-ray, TEM, photoluminescence and absorption, DLTS, Hall transport, impact ionization and pulsed velocity field measurements. The experiments have included both lattice matched and strained layers. It is apparent that the lattice match In/sub 0.52/Al/sub 0.48/As/InP alloys are clustered and dominant D-X trap centers are present in the strained compositions. We are investigating a novel MBE growth technique of growing these alloys directly on GaAs (with a 1 to 4% lattice mismatch) without propagating dislocations. These heteroepitaxial layers and interfaces are being studied by TEM.

  7. MBE growth of GaP on a Si substrate

    SciTech Connect

    Sobolev, M. S. Lazarenko, A. A.; Nikitina, E. V.; Pirogov, E. V.; Gudovskikh, A. S.; Egorov, A. Yu.

    2015-04-15

    It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

  8. MBE Growth of GaAs Whiskers on Si Nanowires

    SciTech Connect

    Maxwell Andrews, Aaron

    2010-01-04

    We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {l_brace}112{r_brace} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

  9. MBE Growth of Graded Structures for Polarized Electron Emitters

    SciTech Connect

    Not Available

    2010-08-25

    SVT Associates, in collaboration with SLAC, have investigated two novel photocathode design concepts in an effort to increase polarization and quantum efficiency. AlGaAsSb/GaAs superlattice photocathodes were fabricated to explore the effect of antimony on device operation. In the second approach, an internal electrical field was created within the superlattice active layer by varying the aluminum composition in AlGaAs/GaAs. A 25% increase in quantum efficiency as a result of the gradient was observed.

  10. MBE Growth of Graded Structures for Polarized Electron Emitters

    SciTech Connect

    Moy, Aaron; Maruyama, T.; Zhou, F.; Brachmann, A.

    2009-08-04

    SVT Associates, in collaboration with SLAC, has investigated two novel photocathode design concepts in an effort to increase polarization and quantum efficiency. AlGaAsSb/GaAs superlattice photocathodes were fabricated to explore the effect of antimony on device operation. In the second approach, an internal electrical field was created within the superlattice active layer by varying the aluminum composition in AlGaAs/GaAs. A 25% increase in quantum efficiency as a result of the gradient was observed.

  11. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1990-01-01

    The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3).

  12. Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE

    NASA Astrophysics Data System (ADS)

    Fastenau, Joel M.; Lubyshev, Dmitri; Qiu, Yueming; Liu, Amy W. K.; Koerperick, Edwin J.; Olesberg, Jon T.; Norton, Dennis

    2013-07-01

    Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that can be tailored to cover a wide range of the mid- and long-wavelength bands by varying the thickness and composition of the constituent materials, and bulk InAsSb-based XBn barrier designs. These materials can provide desirable detector features such as wider wavelength range, suppression of tunneling currents, improved quantum efficiency, and higher operating temperatures. In order to bring these advantages to market, a reliable manufacturing process must be established on large diameter substrates. We report our latest work on the molecular beam epitaxy growth of Sb-detector epiwafers on 100 mm diameter GaSb substrates in a multi-wafer production format. The growth process has been established to address the challenges of these demanding structures, including the large numbers of alternating thin layers and mixed group-V elements. Various characterization techniques demonstrate excellent surface morphology, crystalline structure quality, and optical properties of the epiwafers. The measured wafer-to-wafer consistency and cross-wafer uniformity demonstrate the potential for volume manufacturing.

  13. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    SciTech Connect

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  14. Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBE

    NASA Astrophysics Data System (ADS)

    Bala, Waclaw; Glowacki, Grzegorz; Gapinski, Adam

    1997-06-01

    This works focuses on the study of optical properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on n-type (001) GaAs substrates. Luminescence, reflectivity and Raman spectroscopy are studied. Photoluminescence spectra of the samples are dominated by blue emission bands, which can be associated with radiative recombination of free excitons. The reflectivity spectra were used to investigate the refractive index value and the thickness of the layers. Moreover the temperature dependence of the band-gap energy of ZnxMg1-xSe epilayers was determined. Using Raman spectroscopy we can obtain information about two kinds of longitudinal optical phonon modes observed at room temperature, whose frequencies and intensities depend characteristically on Mg content.

  15. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

  16. In Memory of Dorothy Heathcote, MBE (29 August 1926 to 8 October 2011)

    ERIC Educational Resources Information Center

    Saxton, Juliana; Miller, Carole

    2012-01-01

    In this article, the authors aim to provide a multifaceted lens on to Dorothy Heathcote's enormous influence on the field of drama education. They choose to order the reminiscences historically, focusing on Heathcote's consistency of passion and purpose. The anecdotes, lesson descriptions, and reminiscences capture her voice, her energy, and her…

  17. Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

    NASA Technical Reports Server (NTRS)

    Lieneweg, U.; Bean, J. C.

    1984-01-01

    Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

  18. MBE growth of self-assisted InAs nanowires on graphene

    NASA Astrophysics Data System (ADS)

    Kang, Jung-Hyun; Ronen, Yuval; Cohen, Yonatan; Convertino, Domenica; Rossi, Antonio; Coletti, Camilla; Heun, Stefan; Sorba, Lucia; Kacman, Perla; Shtrikman, Hadas

    2016-11-01

    Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived.

  19. Plasma-assisted MBE growth of nitride-based intersubband detectors

    SciTech Connect

    Monroy, Eva; Guillot, Fabien; Leconte, Sylvain; Bellet-Amalric, Edith

    2007-04-10

    In this work, we present the plasma-assisted molecular-beam epitaxy of quantum well infrared photodetector structures, including the Si-doped GaN/AlN short-period superlattice of the active region, AlGaN claddings and integration of the final device. Photovoltage measurements of complete devices reveal a narrow ({approx}90 meV) detection peak at 1.39 {mu}m at room temperature.

  20. Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasers

    NASA Astrophysics Data System (ADS)

    Monastyrskyi, G.; Aleksandrova, A.; Elagin, M.; Semtsiv, M. P.; Masselink, W. T.; Bryksa, V.

    2013-09-01

    The influence of substrate temperature during the growth of quantum-cascade lasers using gas-source molecular-beam epitaxy on performance and crystal quality of quantum-cascade laser is investigated. Lower substrate temperature is consistently resulting in narrower X-ray diffraction satellites, and lower laser threshold current. This correlation is attributed to increased interface roughness at higher growth temperature.

  1. Formation of pyramid-like nanostructures in MBE grown Si films on Si(001)

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Garzon, L.; Rodriguez-Cañas, E.; Munuera, Carmen; Esteban-Betegon, F.; Varela del Arco, Maria; Ocal, Carmen; Alonso, Maria; Ruiz, Ana

    2010-01-01

    The growth of Si homoepitaxial layers on Si(001) substrates by molecular beam epitaxy is analyzed for a set of growth conditions in which diverse nanometric scale features develop. Using Si substrates prepared by exposure to HF vapor and annealing in ultra high vacuum, a rich variety of surface morphologies is found for different deposited layer thicknesses and substrate temperatures in a reproducible way, showing a critical dependence on both. Arrays of 3D islands (truncated pyramids), percolated ridge networks and square pit (inverted pyramids) distributions are observed. We analyze the obtained arrangements and find remarkable similarities to other semiconductor though heteroepitaxial systems. The nano-scale entities (islands or pits) display certain self assembly and ordering, concerning size, shape and spacing. Film growth sequence follows the islands-coalescence-2D growth pathway, eventually leading to optimum flat morphologies for high enough thickness and temperature.

  2. Surface defect states in MBE-grown CdTe layers

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz

    2014-02-21

    Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

  3. Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry

    NASA Astrophysics Data System (ADS)

    Volkov, P. V.; Goryunov, A.. V.; Lobanov, D. N.; Luk'yanov, A. Yu.; Novikov, A. V.; Tertyshnik, A. D.; Shaleev, M. V.; Yurasov, D. V.

    2016-08-01

    Differences in heating of silicon and silicon-on-insulator (SOI) substrates in molecular beam epitaxy were revealed by low-coherence tandem interferometry. Using this technique the interference effects which impede the correct evaluation of SOI substrate temperature by infrared pyrometers can be eliminated and so the reliable temperature readout can be achieved. It was shown that at the same thermocouple and heater power settings the real temperature of SOI substrates is higher than of silicon ones and the difference may be as high as 40-50 °C at temperatures close to 600 °C. It is supposed that such effect is caused by the additional absorption of heater radiation by the buried oxide layer in the mid-infrared range. Independent proof of this effect was obtained by growing on both types of substrates a series of structures with self-assembled Ge nanoislands whose parameters are known to be very temperature sensitive. The proposed low-coherence interferometry technique provides precise real-time control of the growth temperature and so allows formation of SiGe nanostructures with desired parameters.

  4. The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers.

    PubMed

    Li, L H; Zhu, J X; Chen, L; Davies, A G; Linfield, E H

    2015-02-01

    The technique of molecular beam epitaxy has recently been used to demonstrate the growth of terahertz frequency GaAs/AlGaAs quantum cascade lasers (QCL) with Watt-level optical output powers. In this paper, we discuss the critical importance of achieving accurate layer thicknesses and alloy compositions during growth, and demonstrate that precise growth control as well as run-to-run growth reproducibility is possible. We also discuss the importance of minimizing background doping level in maximizing QCL performance. By selecting high-performance active region designs, and optimizing the injection doping level and device fabrication, we demonstrate total optical (two-facet) output powers as high as 1.56 W.

  5. Development of MBE II-VI Epilayers on GaAs(211)B

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Nozaki, C.; Almeida, L. A.; Jaime-Vasquez, M.; Lennon, C.; Markunas, J. K.; Benson, D.; Smith, P.; Zhao, W. F.; Smith, D. J.; Billman, C.; Arias, J.; Pellegrino, J.

    2012-10-01

    Large-area, low-cost substrates are envisioned for next-generation HgCdTe infrared focal-plane arrays (IRFPA). Si, GaAs, Ge, and InSb have been previously examined as potential candidates. Fabrication of IRFPAs based on these substrates is limited by fundamental materials properties that potentially lead to lower detector performance and operability. Lattice and thermal mismatch between the substrate and epilayer are just two of several material factors that must be considered. We have reviewed these factors in the context of more recent data, and determined it worthwhile to revisit the use of GaAs substrates for epitaxial growth of HgCdTe. Our study starts with an evaluation of the surface quality (epireadiness) of commercially available (211) B-oriented GaAs substrates. Molecular beam epitaxial growth of CdTe buffer layers and subsequent HgCdTe absorber layers are performed in separate vacuum-interconnected chambers. The importance of optimization of the CdTe buffer layer growth for high-quality HgCdTe is detailed through surface morphology and x-ray studies. x-Ray diffraction rocking-curve full-width at half-maximum values as low as 52 arcsec have been obtained. Long-wave infrared Hg1- x Cd x Te ( x = 0.23) has been grown on these buffer layers, producing cross-hatch-dominated surface morphologies, with dislocation densities as low as ˜3 × 106 cm-2. We have also obtained (for optimized layers), 80-K Hall-effect n-type carrier concentration and electron mobility of approximately ~1.5 × 1015 cm-3 and 1 × 105 cm2 V-1 s-1, respectively. Finally, we briefly compare GaAs and Si in light of our preliminary investigation.

  6. Low temperature magnetoresistance studies in MBE grown topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Dey, Rik; Roy, Anupam; Pramanik, Tanmoy; Guchhait, Samaresh; Sonde, Sushant; Rai, Amritesh; Majumder, Sarmita; Ghosh, Bahniman; Register, Leonard; Banerjee, Sanjay

    2015-03-01

    We studied low temperature magnetoresistance in molecular beam epitaxy grown topological insulator Bi2Se3andBi2Te3 thin films. The surface and structural characterization of the grown films showed smooth epitaxial growth on Si(111). The magnetoresistance has been measured at low temperatures (2 - 20 K) with magnetic fields upto 9 T. The full range perpendicular field magnetoresistance has been explained with the original Hikami-Larkin-Nagaoka theory. Altshuler-Aronov theory of localization has been used to understand the full range parallel field magnetoresistance. Various scattering times have been estimated by fitting the magnetoresistance data with the theory. It is shown that the Zeeman effect is not needed to explain the magnetoresistance and has not been considered in the theory either. The angle dependent anisotropic magnetoresistance has also been observed and explained using the above theories. This work is funded by NRI-SWAN.

  7. MBE growth of mid-IR type-II interband laser diodes

    NASA Astrophysics Data System (ADS)

    Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J.

    2005-05-01

    We report on molecular beam epitaxial growth and characterization of InAs/GaInSb/InAs/AlGaAsSb type-II miniband-to-bound state W-lasers. Laser core structures were characterized using photoluminescence, high resolution X-ray diffraction and Raman spectroscopy to reveal the best growth conditions. The growth temperature for the laser core was varied in the range between 380 °C and 460 °C and found to be optimal at 420 °C. Optimized laser active regions were embedded between 600 nm AlGaAsSb separate confinement layers which in turn were sandwiched between 1.5 μm thick n- and p-doped Al 0.85Ga 0.15As 0.07Sb 0.93 cladding layers. The upper cladding was capped with a 100 nm p +-GaSb contact layer. The growth temperature of the upper separate confinement and cladding layer was varied between 470 °C and 530 °C to reveal the influence on laser performance. Laser emission is observed near 3.2 μm. Devices with uncoated facets, mounted substrate side down could be operated up to a temperature of 185 K in continuous-wave (cw) mode. Single ended output powers of 144 mW in cw mode and 330 mW in pulsed operation were obtained for a 5-period diode laser structure with HR/AR coated mirror facets at an operation temperature of 110 K.

  8. MBE growth and characterization of 5-{mu}m quantum-cascade lasers

    SciTech Connect

    Mamutin, V. V. Ustinov, V. M.; Boetthcher, J.; Kuenzel, H.

    2010-07-15

    Quantum-cascade lasers, which are obtained by molecular-beam epitaxy, emit at wavelengths of 5.0 {mu}m at 77 K and 5.2 {mu}m at 300 K and are based on a design with four quantum wells in the active region with vertical transitions and strain-compensated superlattices with high-efficiency injection and a short lifetime of the ground state are fabricated. The typical thresholds for lasing at 300 K were in the range 4-10 kA/cm{sup 2}. The maximum emission power was as high as {approx}1 W, the maximum lasing temperature was {approx}450 K, and the maximum characteristic temperature T{sub 0} {approx} 200 K. The use of a modified process of postgrowth treatment made it possible to reproducibly obtain high-quality devices.

  9. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  10. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    NASA Astrophysics Data System (ADS)

    Choudhary, B. S.; Singh, A.; Tanwar, S.; Tyagi, P. K.; Kumar, M. Senthil; Kushvaha, S. S.

    2016-04-01

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  11. Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique

    NASA Astrophysics Data System (ADS)

    Chen, Hugo Juin-Yu; Yang, Dian-Long; Huang, Tseh-Wet; Yu, Ing-Song

    2016-05-01

    In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 1011 cm-2 for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface condition, indium droplets, and the formation of InN nanodots are identified during the epitaxy. The X-ray photoelectron spectroscopy and photoluminescence measurements have shown the formation of InN nanodots as well. The growth mechanism of InN nanodots could be described via the characterizations of indium droplets and InN nanodots using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The density of the InN nanodots was less than that of the In droplets due to the surface diffusion and desorption of atoms during the nitridation and annealing process. The average size and density of InN nanodots can be controlled by the substrate temperatures during the growth. For the growth at lower temperature, we obtained the higher density and smaller average size of InN nanodots. To minimize the total surface energy, the coarsening and some preferred orientations of InN nanodots were observed for the growth at high temperature.

  12. Laser MBE-grown yttrium iron garnet films on GaN: characterization of the crystal structure and magnetic properties

    NASA Astrophysics Data System (ADS)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-07-01

    Yttrium iron garnet (YIG) films were grown on GaN substrates using the laser molecular beam epitaxy method. X-ray diffraction data showed polycrystalline YIG layers without additional structural modifications. The magnetic properties of the YIG films were studied at room temperature with the aid of a vibration sample magnetometer, the magneto-optical Kerr effect and ferromagnetic resonance methods. ‘Easy-plane’-type magnetic anisotropy was found in the films. The gyromagnetic ratio and 4 πMS value were calculated.

  13. Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via Dirac gap.

    PubMed

    Bansal, Namrata; Cho, Myung Rae; Brahlek, Matthew; Koirala, Nikesh; Horibe, Yoichi; Chen, Jing; Wu, Weida; Park, Yun Daniel; Oh, Seongshik

    2014-03-12

    Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only microsized flakes that are highly irregular in shape and thickness. In this work, we developed a process to transfer the entire area of TI Bi2Se3 thin films grown epitaxially on Al2O3 and SiO2 to arbitrary substrates, maintaining their pristine morphology and crystallinity. Transport measurements show that these transferred films have lower carrier concentrations and comparable or higher mobilities than before the transfer. Furthermore, using this process we demonstrated a clear metal-insulator transition in an ultrathin Bi2Se3 film by gate-tuning its Fermi level into the hybridization gap formed at the Dirac point. The ability to transfer large area TI films to any substrate will facilitate fabrication of TI heterostructure devices, which will help explore exotic phenomena such as Majorana fermions and topological magnetoelectricity.

  14. A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

    NASA Astrophysics Data System (ADS)

    de la Mata, Maria; Zhou, Xiang; Furtmayr, Florian; Teubert, Jörg; Gradecak, Silvija; Eickhoff, Martin; Fontcuberta i Morral, Anna; Arbiol, Jordi

    2013-05-01

    We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting with the well-known axial, radial (coaxial/prismatic) or polytypic quantum wells in GaN/AlN, GaAs/AlAs or wurtzite/zinc-blende systems, respectively, we move to more sophisticated structures by lowering their dimensionality. New recent approaches developed for the self-assembly of GaN quantum wires and InAs or AlGaAs quantum dots on single nanowire templates are reported and discussed. Aberration corrected scanning transmission electron microcopy is presented as a powerful tool to determine the structure and morphology at the atomic scale allowing for the creation of 3D atomic models that can help us to understand the enhanced optical properties of these advanced quantum structures.

  15. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Recordkeeping and Reporting § 33.503 How... participation are calculated as a percentage of total financial assistance agreement project procurement costs... agreements that capitalize revolving loan programs, the total amount is the total procurement dollars in...

  16. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Recordkeeping and Reporting § 33.503 How... participation are calculated as a percentage of total financial assistance agreement project procurement costs... agreements that capitalize revolving loan programs, the total amount is the total procurement dollars in...

  17. Development of surface structures in MBE grown MgS and the origin of the phase instability

    NASA Astrophysics Data System (ADS)

    Bradford, C.; Prior, K. A.; Cavenett, B. C.

    2004-03-01

    MgS is an excellent barrier material for wide-gap II-VI quantum structures due to its large band gap of 5 eV. Although its stable crystal structure is rocksalt we have demonstrated the growth of zinc blende (ZB) MgS lattice matched to GaAs substrates [1]. MgS layers up to a critical thickness of 130 nm can be grown in the metastable ZB phase before the compound reverts to the stable rocksalt structure. In this paper we describe the changes in the surface morphology which occur during the growth of MgS in the stages leading up to the collapse of the ZB crystal structure.

  18. 40 CFR 33.407 - How long do MBE and WBE fair share objectives remain in effect?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... than ten years old during the three-year period does not by itself constitute a significant change... effect for three fiscal years unless there are significant changes to the data supporting the fair...

  19. Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

    NASA Astrophysics Data System (ADS)

    Sadwick, L. P.; Lee, P. P.; Patel, M.; Nikols, M.; Hwu, R. J.; Shield, J. E.; Streit, D. C.; Brehmer, D.; McCormick, K.; Allen, S. J.; Gedridge, R. W.

    1996-07-01

    We report the first known study of the growth of epitaxial dysprosium phosphide (DyP) grown on gallium arsenide (GaAs). DyP is lattice matched to GaAs, with the room-temperature mismatch being less than 0.01%. We have grown DyP on GaAs by gas-source and by solid-source molecular beam epitaxy using custom-designed group V thermal cracker cells and group III high temperature effusion cells. X-ray diffraction results show the DyP epilayer to be (001) single crystal on GaAs(001) substrate. Electrical and optical measurements performed to date are inconclusive as to whether DyP is a semi-metal or a semiconductor with a small band gap. The undoped films are n-type with measured electron concentrations on the order of 5 × 10 19-6 × 10 20cm -3 with mobilities of 1-10 cm 2/V · s. {DyP}/{GaAs} is stable in air with no apparent oxidation taking place, even after months of exposure to ambient untreated air. Material and surface science properties measured for {DyP}/{GaAs} include Hall measurements, 2ϑ and double-crystal X-ray diffraction spectra and photothermal deflection spectroscopy.

  20. Trust: A Master Teacher's Perspective on Why It Is Important: How to Build It and Its Implications for MBE Research

    ERIC Educational Resources Information Center

    D'Andrea, Katherine Clunis

    2013-01-01

    Teaching is an interaction. It is a relationship between my students and myself. For successful interactions to take place there needs to be trust. In order for my students to be successful I have to be successful as well. My students and I have to have a variety of interactions. These interactions build trust, which leads to bonding. I believe…

  1. Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy

    NASA Astrophysics Data System (ADS)

    Beaudoin, M.; Lewis, R. B.; Andrews, J. J.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; O'Leary, S. K.; Tiedje, T.

    2015-09-01

    The bandedge optical properties of GaAsBi films, as thick as 470 nm, with Bi content varying from 0.7% Bi to 2.8% Bi grown by molecular beam epitaxy on GaAs substrates are measured by photoluminescence (PL) and photothermal deflection spectroscopy (PDS). The PDS spectra were fit with a modified Fernelius model which takes into account multiple reflections within the GaAsBi layer and GaAs substrate. Three undoped samples and two samples that are degenerately doped with silicon are studied. The undoped samples show a clear Urbach absorption edge with a composition dependent bandgap that decreases by 56 meV/% Bi and a composition independent Urbach slope parameter of 25 meV due to absorption by Bi cluster states near the valence band. The doped samples show a long absorption tail possibly due to absorption by gap states and free carriers in addition to a Burstein-Moss bandgap shift. PL of the undoped samples shows a lower energy emission peak due to defects not observed in the usually available thin samples (50 nm or less) grown under similar conditions.

  2. Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

    PubMed

    Ihlefeld, Jon F; Tian, Wei; Liu, Zi-Kui; Doolittle, W Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Ramesh, Ramamoorthy; Schlom, Darrell G

    2009-08-01

    BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.

  3. Formation of Metal-Semiconductor Interfaces on Mbe-Grown Gallium ARSENIDE(100): Surface Photovoltage, Chemistry and Band Bending

    NASA Astrophysics Data System (ADS)

    Mao, Duli

    1992-01-01

    The chemical, structural and electronic properties of the metal-GaAs interfaces formed on the polar (100) surface are studied using high resolution core level photoemission spectroscopy (PES) and low energy electron diffraction (LEED). The clean (4 x 2)-c(8 x 2) reconstructed GaAs(100) surface, prepared by molecular beam epitaxy and subsequent thermal decapping of an As protective layer, is characterized carefully. Ga 3d and As 3d core levels are analyzed using test square curve fitting. Two Ga surface components are resolved while only one surface component is necessary for As. The assignment of these surface components to different surface atomic arrangements is discussed. The surface Fermi level position with respect to the valence band maximum is also investigated as a function of decapping temperature. Metal (In, Ga, Au)/GaAs(100) interfaces, formed at both room (RT) and low temperature (LT), are studied. The morphology of these interfaces resembles that of metal/GaAs(110) interfaces formed at LT, in that the deposited metal atoms reside at the surface as isolated adatoms rather than as clusters at submonolayer coverage. Metal clustering is only important at coverages higher than a few monolayers and is more prominent at RT than at LT. The GaAs(100) band bending is studied as a function of metal coverage and deposition temperature. At submonolayer metal coverages, In and Ga both cause reduced band bending (~ 0.2eV) on n-type GaAs, a phenomenon similar to the Fermi level overshoot observed at LT-formed metal/p-GaAs(110) interfaces and indicative of formation of adatom-induced donor levels in the upper part of the band gap. With Au, In and Ga, the Fermi level is pinned at 0.4eV, 0.6eV and 0.68eV above the valence band maximum respectively, in good agreement with the results obtained at metal/GaAs(110) interfaces. This contradicts recent claims of near-Schottky limit for these interfaces. Evidence of correlation between pinning and overlayer metallization is found for all three interfaces, supporting the metal induced gap states (MIGS) model for Schottky barrier formation. The synchrotron radiation-induced surface photovoltage (SPV), which could invalidate the apparent band bending measured with PES, is studied as a function of metal coverage and temperature, using a Kelvin probe. A large (0.55eV) and quasi-permanent SPV is observed on lightly doped n -GaAs at LT. A non-negligible (0.2eV) SPV is also observed at room temperature. No SPV is detected on highly doped GaAs. The impact of this synchrotron radiation induced SPV on the photoemission study of metal-semiconductor interfaces is discussed.

  4. A Complexity Approach toward Mind-Brain-Education (MBE); Challenges and Opportunities in Educational Intervention and Research

    ERIC Educational Resources Information Center

    Steenbeek, Henderien W.; van Geert, Paul L. C.

    2015-01-01

    In the context of an educational or clinical intervention, we often ask questions such as "How does this intervention influence the task behavior of autistic children?" or "How does working memory influence inhibition of immediate responses?" What do we mean by the word "influence" here? In this article, we introduce…

  5. Helicon Discharge with Selectable Nitrogen Reactive Species Production as a Plasma Source for III-group Nitrides Growth by MBE

    NASA Astrophysics Data System (ADS)

    Biloiu, Costel; Doss, Forest; Scime, Earl

    2004-11-01

    Plasma assisted molecular beam epitaxy (PAMBE) of III-N materials is a potential alternative to MOCVD for fabrication of high quality wide band gap semiconductor devices. In the helicon plasma source, it may be possible to control the population of specific reactive nitrogen species by modification of the electron energy distribution function through the resonant wave-particle interaction arising from electrons traveling at same velocity as the helicon wave phase velocity. We report preliminary results on control of reactive nitrogen species performed in a steady state, high density, helicon plasma source CHEWIE (Compact HElicon Waves and Instabilities Experiment). The helicon vacuum chamber is a 12 cm long, Pyrex tube, 6 cm in diameter, connected to a stainless steel diffusion chamber. RF power of up to 1.0 kW over a frequency range of 3-28 MHz is used to create the steady state plasma. A 7 cm long, half wave, m = +1, helical antenna couples the rf energy into the plasma. A single solenoidal magnetic field coil surrounds the source and is capable of generating axial magnetic fields up to 600 G. Optical emission spectroscopy investigations show that under certain conditions, the decay from the long lived A^3Σ_u^+ state dominates the emission spectrum of the plasma.

  6. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    DOE PAGES

    Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

  7. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    NASA Astrophysics Data System (ADS)

    Kesaria, M.; de la Mare, M.; Krier, A.

    2016-11-01

    Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron–heavy hole (e1–hh1) and electron–light hole (e1–lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D *  =  1.25  ×  109 cm Hz1/2 W‑1.

  8. Hilda Mary Woods MBE, DSc, LRAM, FSS (1892–1971): reflections on a Fellow of the Royal Statistical Society

    PubMed Central

    Farewell, Vern; Johnson, Tony; Gear, Rosemary

    2012-01-01

    We have previously described the content of a text by Woods and Russell, An Introduction to Medical Statistics, compared it with Principles of Medical Statistics by Hill and set both volumes against the background of vital statistics up until 1937. The two books mark a watershed in the history of medical statistics. Very little has been recorded about the life and career of the first author of the earlier textbook, who was a Fellow of the Royal Statistical Society for at least 25 years, an omission which we can now rectify with this paper. We describe her education, entry into medical statistics, relationship with Major Greenwood and her subsequent career and life in Ceylon, Kenya, Australia, England and South Africa. PMID:22973076

  9. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... identity as a member of a group without regard to his or her individual qualities and as further defined by... CFR 124.105 and 13 CFR 124.106, respectively. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to...

  10. Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr{sub 4}

    SciTech Connect

    Zado, A.; Tschumak, E.; Lischka, K.; As, D. J.; Gerlach, J. W.

    2010-11-01

    We report on carbon doping of cubic GaN by CBr{sub 4} using plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. The samples consist of a 70 nm thick GaN buffer followed by a 550 nm thick GaN:C layer. Carbon doping is realized with a home-made carbon tetrabromide sublimation source. The CBr{sub 4} beam equivalent pressure was established by a needle valve and was varied between 2x10{sup -9} mbar and 6x10{sup -6} mbar. The growth was controlled by in-situ reflection high energy electron diffraction. The incorporated carbon concentration is obtained from secondary ion mass spectroscopy. Capacitance voltage characteristics were measured using metal-insulator-semiconductor structures. Capacitance voltage measurements on nominally undoped cubic GaN showed n-type conductivity with N{sub D}-N{sub A} = 1x10{sup 17} cm{sup -3}. With increasing CBr{sub 4} flux the conductivity type changes to p-type and for the highest CBr{sub 4} flux N{sub A}-N{sub D} = 4{center_dot}5x10{sup 18} cm{sup -3} was obtained.

  11. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  12. Defect studies in MBE grown GaSb{sub 1−x}Bi{sub x} layers

    SciTech Connect

    Segercrantz, N.; Kujala, J.; Tuomisto, F.; Slotte, J.; Song, Y.; Wang, S.

    2014-02-21

    Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb{sub 1−x}Bi{sub x} on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0–0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.

  13. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    NASA Astrophysics Data System (ADS)

    Flynn, Chris; Lee, William

    2014-04-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 1018-5 × 1020 cm-3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E2 and A1(LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 1019 cm-3, increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN.

  14. MBE Growth of InN/GaN(0001) and Shape Transitions of InN islands

    NASA Astrophysics Data System (ADS)

    Cao, Yongge; Xie, Maohai; Liu, Ying; Ng, Y. F.

    2003-03-01

    Plasma-assisted molecular-beam epitaxial growth of InN on GaN(0001) is investigated. Both layer-by-layer and Stranski-Krastanov (SK) growth modes are observed under different growth windows. Strain relaxation is studied by real-time recording of the in-plane lattice spacing evolutions on RHEED pattern, which suggest a gradual relaxation of the strain in InN film commenced during the first bilayer (BL) deposition and almost completed after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations. Based on statistical analysis, the shape transitions of 3D islands are firstly observed in the III-nitrides system. The InN islands transform gradually from pyramids to platelets with increasing of In flux. Under In-rich growth condition, the reverse trend of island shape evolution dependence on volume size, compared with Equilibrium Crystal Shape (ECS) theory, is induced by the Indium self-surfactant effects, in which Indium adlayer on the top surface of InN islands will depress the thermodynamic driving force for the vertical growth of 3D islands. Lateral growth of 3D islands is not only the result of kinetic process but also favored by thermodynamics while Indium self-surfactant exist.

  15. Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

    SciTech Connect

    Ramesh, Ramamoorthy; Uecker, Reinhard , Germany); Doolittle, W. Alan; Reiche, P. , Germany); Liu, Zi-Kui; Bernhagen, Margitta , Germany); Tian, Wei; Ihlefeld, Jon F.; Schlom, Darrell G.

    2008-08-01

    BiFeO3 thin films have been deposited on (101) DyScO3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds. Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3/(100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [1120] BiFeO3 [1120] GaN (SiC) plus a twin variant related by a 180{sup o} in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.

  16. The characteristics of MBE-grown InxAl1-xN/GaN surface states

    NASA Astrophysics Data System (ADS)

    Jiao, Wenyuan; Kong, Wei; Li, Jincheng; Collar, Kristen; Kim, Tong-Ho; Losurdo, Maria; Brown, April S.

    2016-08-01

    The density and energy distribution of InxAl1-xN/GaN surface donor states are studied for InxAl1-xN structures with varying indium compositions. The results support a surface states model with a constant energy distribution of 2.17-2.63 eV below the conduction band minimum and a concentration of 4.64-8.27 × 1013 cm-2 eV-1. It is shown that the properties of the surface states are affected by the surface indium composition xs, as opposed to the bulk composition, xb (InxAl1-xN). Higher surface indium composition xs increases the density of surface states and narrows their energy distribution.

  17. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... the implementing regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR... Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations). (c) Economically... Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian...

  18. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  19. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  20. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  1. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  2. Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111)

    NASA Astrophysics Data System (ADS)

    Kumar, Mahesh; Rajpalke, Mohana K.; Roul, Basanta; Bhat, Thirumaleshwara N.; Krupanidhi, S. B.

    2014-01-01

    InN nanorods (NRs) were grown on Si(111) substrate by plasma-assisted molecular beam epitaxy. The growth of InN NRs has been demonstrated using an electron-beam evaporated (~2 nm) Au layer prior to the initiation of growth. The structure and morphology of as deposited Au film, annealed at 600 °C, and InN NRs were investigated using X-ray photoelectron spectroscopy and scanning electron microscopy. Chemical characterization was performed with energy dispersive X-ray analysis. Single-crystalline wurtzite structure of InN NRs is verified by transmission electron microscopy. The formation process of NRs is investigated and a qualitative mechanism is proposed.

  3. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... CFR 124.105 and 13 CFR 124.106, respectively. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native... identity as a member of a group without regard to his or her individual qualities and as further defined...

  4. Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film

    SciTech Connect

    Novikov, V. A. Grigoryev, D. V.

    2015-03-15

    Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.

  5. MBE growth and structural and magnetic properties of (In 1-yAl y) 1-xMn xAs-diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Lee, W. N.; Chen, Y. F.; Huang, J. H.; Guo, X. J.; Kuo, C. T.; Ku, H. C.

    2006-04-01

    A series of quaternary-diluted magnetic semiconductors, (In 1-yAl y) 1-xMn xAs, have been successfully grown on InP substrates by low-temperature molecular beam epitaxy. The (In 0.52Al 0.48) 1-xMn xAs with x⩽0.11 were grown on a nearly lattice-matched In 0.52Al 0.48As buffer, while the (In 1-yAl y) 1-xMn xAs with a higher Mn content of 0.11< x⩽0.18 were grown on a graded 3-layer In 1-yAl yAs buffer structure. The results of transmission electron microscopy and double-crystal X-ray diffraction reveal that all (In 1-yAl y) 1-xMn xAs epilayers are single crystal with zincblende structure, and the lattice constant increases with increasing the Mn content. The magnetic measurements show that the (In 1-yAl y) 1-xMn xAs semiconductors exhibit a paramagnetic-like state for x⩽0.05 while a ferromagnetic state for x>0.05, and the Curie temperature of ferromagnetic (In 1-yAl y) 1-xMn xAs increases with increasing Mn content.

  6. Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma[Electron Cyclotron Resonance-Molecular Beam Epitaxy

    SciTech Connect

    Araki, Tsutomu; Chiba, Yasuo; Nanishi, Yasushi

    2000-07-01

    GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnar structure was formed in the GaN layer grown with hydrogen on Ga-polar template.

  7. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.

    PubMed

    Poppitz, David; Lotnyk, Andriy; Gerlach, Jürgen W; Lenzner, Jörg; Grundmann, Marius; Rauschenbach, Bernd

    2015-06-01

    Ion-beam assisted molecular-beam epitaxy was used for direct growth of epitaxial GaN thin films on super-polished 6H-SiC(0001) substrates. The GaN films with different film thicknesses were studied using reflection high energy electron diffraction, X-ray diffraction, cathodoluminescence and primarily aberration-corrected scanning transmission electron microscopy techniques. Special attention was devoted to the microstructural characterization of GaN thin films and the GaN-SiC interface on the atomic scale. The results show a variety of defect types in the GaN thin films and at the GaN-SiC interface. A high crystalline quality of the produced hexagonal GaN thin films was demonstrated. The gained results are discussed.

  8. Control of stress and threading dislocation density in the thick GaN/AlN buffer layers grown on Si (111) substrates by low- temperature MBE

    NASA Astrophysics Data System (ADS)

    Zolotukhin, D.; Nechaev, D.; Kuznetsova, N.; Ratnikov, V.; Rouvimov, S.; Jmerik, V.; Ivanov, S.

    2016-08-01

    We report on successful growth by plasma-assisted molecular beam epitaxy on a Si(111) substrate crack-free GaN/AlN buffer layers with a thickness more than 1 μm. The layers fabricated at relatively low growth temperature of 780°C have at room temperature the residual compressive stress of -97 MPa. Intrinsic stress evolution during the GaN growth was monitored in situ with a multi-beam optical system. Strong dependence of a stress relaxation ratio in the growing layer vs growth temperature was observed. The best-quality crack-free layers with TDs density of ∼⃒109 cm-2 and roughly zero bowing were obtained in the sample with sharp 2D-GaN/2D-AlN interface.

  9. High operating temperature SWIR p+-n FPA based on MBE-grown HgCdTe/Si(0 1 3)

    NASA Astrophysics Data System (ADS)

    Bazovkin, V. M.; Dvoretsky, S. A.; Guzev, A. A.; Kovchavtsev, A. P.; Marin, D. V.; Polovinkin, V. G.; Sabinina, I. V.; Sidorov, G. Yu.; Tsarenko, A. V.; Vasil'ev, V. V.; Varavin, V. S.; Yakushev, M. V.

    2016-05-01

    The characteristics of SWIR (1.6-3 μm) 320 × 256 and 1024 × 1024 focal plane arrays (FPA's) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p-n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK.

  10. MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates

    NASA Astrophysics Data System (ADS)

    Umeno, K.; Furukawa, Y.; Wakahara, A.; Noma, R.; Okada, H.; Yonezu, H.; Takagi, Y.; Kan, H.

    2009-03-01

    We demonstrated an appropriate growth procedure for GaAsN/GaP(N) single quantum wells (SQWs) with abrupt heterointerfaces in solid-source molecular beam epitaxy able to prevent the formation of unwanted As/P intermixing layers caused by residual As pressure. It was clarified that a GaP capping layer, grown on the top of the GaAsN SQW, was effective in avoiding the P/As exchange reaction on the GaAsN SQW surface. In fact, gettering by Ga was effective in removing the residual As 2 pressure, thus preventing the formation of the unwanted As/P intermixing layer. Then, we suggested that a GaAs 0.965N 0.035/GaP 0.98N 0.02 SQW has a type-I band alignment with the conduction band offset larger than 300 meV. Finally, we fabricated a GaAs 0.965N 0.035/GaP SQW light-emitting diodes (LEDs) on the Si substrate. The GaAs 0.965N 0.035/GaP SQW LED emitted in the infrared region at a wavelength at 860 nm. Therefore, the GaAsN/GaP(N) SQW can be used as a direct-transition active layer in light-emitting devices on Si, to realize monolithic optoelectronic integrated circuits and systems operating in the wavelength range around 850 nm.

  11. Multistage nucleation of two-dimensional Si islands on Si(111)-7x7 during MBE growth: STM experiments and extended rate-equation model

    SciTech Connect

    Filimonov, Sergey; Cherepanov, Vasily; Voigtlaender, Bert; Hervieu, Yuri

    2007-07-15

    The submonolayer density of two-dimensional (2D) islands in Si/Si(111)-7x7 molecular beam epitaxy is measured using scanning tunneling microscopy. At a relatively low deposition temperature of 673 K, the density of 2D islands is a power function of the deposition flux N{sub 2D}{proportional_to}F{sup {chi}} with the exponent {chi}=0.24 being smaller than that predicted by the standard nucleation theory. The nonstandard scaling of the 2D island density is explained by the multistage character of the nucleation process on the Si(111)-7x7 surface which involves consecutive stages of formation of stable Si clusters, formation of pairs of clusters, and transformation of the cluster pairs to 2D islands. Using an extended rate-equation model, we analyze the temperature and growth rate dependencies of the density of single clusters, cluster pairs, and 2D islands and show that an activation barrier of {approx}1.26 eV delays the transformation of cluster pairs to 2D islands. The delayed transformation of cluster pairs to 2D islands is the reason for the nonstandard scaling of the 2D island density observed at low deposition temperatures.

  12. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth.

  13. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    SciTech Connect

    Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

  14. Development of MBE grown Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

    NASA Technical Reports Server (NTRS)

    Miller, M. D.

    1981-01-01

    Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on BaF2 substrates. Methods for crystal growth, crystal transfer, and device fabrication by photolithographic techniques were developed. The lasers operate in the spectra range from 10 microns to 14 microns and at temperatures from 12K to 60K continuous wave and to 95 K pulsed.

  15. Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, Partha; Bag, Ankush; Gomes, Umesh; Banerjee, Utsav; Ghosh, Saptarsi; Kabi, Sanjib; Chang, Edward Y. I.; Dabiran, Amir; Chow, Peter; Biswas, Dhrubes

    2014-04-01

    A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for rational comparison with that grown on sapphire. Direct-current analysis and physical characterization were carried out to understand the performance of the devices. Mathematical measurement of the instability of the current-voltage ( I- V) characteristic at high applied drain bias was carried out to evaluate the performance of both devices. An improved two-dimensional (2D) analysis of the I- V characteristic was performed from a thermal perspective including appropriate scattering effects on the 2D electron gas mobility. The experimental and analytical studies were correlated to reveal the effects of temperature-sensitive scattering phenomena on the mobility as well as on the I- V characteristic at high drain bias in terms of lattice thermal heating. It is observed that the HEMT on Si has improved stability compared with sapphire due to its weaker scattering phenomena at high drain bias, associated with its thermal conductivity. Simulation of 2D thermal mapping was also carried out to distinguish the hot-spot regions of the devices. The comparable electrical performance of these devices illustrates the viability of AlGaN/GaN HEMTs on Si(111) to achieve low-cost stable devices with better thermal power handling for high-voltage applications.

  16. Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

    NASA Astrophysics Data System (ADS)

    Nirwal, Varun Singh; Singh, Joginder; Gautam, Khyati; Peta, Koteswara Rao

    2016-05-01

    We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10-5 A to 7.31×10-7 A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of Rs decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.

  17. Society News: New Year MBE for Derek Raine; New Saturday Library dates; Society News; New way to pay fees; New Fellows

    NASA Astrophysics Data System (ADS)

    2012-02-01

    The London Olympics and the Queen's Golden Jubilee have led the Society to change planned Saturday openings of the RAS Library in Burlington House. The following were elected Fellows of the Society on 9 December 2011:

  18. Composition and optical properties of dilute-Sb GaN1-xSbx highly mismatched alloys grown by MBE

    NASA Astrophysics Data System (ADS)

    Shaw, M.; Yu, K. M.; Ting, M.; Powell, R. E. L.; Sarney, W. L.; Svensson, S. P.; Kent, A. J.; Walukiewicz, W.; Foxon, C. T.; Novikov, S. V.; Martin, R. W.

    2014-11-01

    In this work the compositional and optical characterization of three series of dilute-Sb GaN1 - xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10-7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10-7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.

  19. Microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping of MBE-grown samples

    SciTech Connect

    Resch-Esser, U.; Esser, N.; Brar, B.; Kroemer, H.

    1997-06-01

    In this study we report on the microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping. Molecular beam epitaxy grown GaSb(001) layers capped with a protective Sb layer were transferred through the atmosphere into an UHV-analysis system and investigated by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). After thermal desorption of the capping layer clear c(2{times}6) LEED patterns were observed. STM images show flat surface areas with a rowlike, somewhat disordered structure. High-resolution images resolve individual Sb dimers on the surface. The surface is covered by an incomplete layer of dimerized Sb, adsorbed on a complete second layer of Sb, which is also dimerized in that regions not covered by the fractional Sb top layer. {copyright} {ital 1997} {ital The American Physical Society}

  20. Increased bismuth concentration in MBE GaAs{sub 1−x}Bi{sub x} films by oscillating III/V flux ratio during growth

    SciTech Connect

    Wood, Adam W. Babcock, Susan E.; Li, Jincheng; Brown, April S.

    2015-05-15

    The authors have examined bismuth concentration profiles in GaAs{sub 1−x}Bi{sub x} films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in conjunction with x-ray diffraction. Samples were grown with a gradient in each of the component fluxes, and therefore, the III/V ratio across the substrate. Rotating the sample during growth exposed the growth surface to an oscillating III/V flux ratio. Sinusoidal [Bi] profiles resulted in the growth direction, the wavelength and number of which were consistent with the growth rate and the rate of substrate rotation. However, the magnitude of [Bi] in the observed fluctuations was greater than the maximum [Bi] achieved using the same Bi flux and Ga/As flux ratios in steady-state conditions on a stationary substrate, suggesting that varying the III/V flux ratio during growth promotes the incorporation of Bi in GaAs{sub 1−x}Bi{sub x} films. A proposed qualitative model for how this enhancement might occur hypothesizes a critical role for alternating growth and shrinkage of Ga-Bi predroplet clusters on the surface as the growing material is rotated through Ga-rich and As-rich flux compositions.

  1. Heavy Ion Fusion Accelerator Research (HIFAR) half-year report, October 1, 1989--March 31, 1990

    SciTech Connect

    Not Available

    1990-03-01

    This report discusses the following topics: Transverse Emittance Studies on MBE-4; MBE-4 Simulations; Beam Centroid Motion and Misalignments in MBE-4; Survey and Alignment of MBE-4; Energy Analysis of the 5mA MBE-4 Beam; An Improved 10 mA Ion Source for MBE-4; Emittance Degradation via a Wire Grid; Ion Source Development; 2 MV Injector; Electrostatic Quadrupole Prototype Development Activity; Magnetic Induction Core Studies; A Preliminary Consideration of Beam Splitting in Momentum Space; and Status of the Optimization Code HILDA.

  2. Mind, Brain, and Education: A Transdisciplinary Field

    ERIC Educational Resources Information Center

    Knox, Rockey

    2016-01-01

    The emerging field of mind, brain, and education (MBE) is grappling with core issues associated with its identity, scope, and method. This article examines some of the most pressing issues that structure the development of MBE as a transdisciplinary effort. Rather than representing the ongoing debates in MBE as superficial squabbles to eventually…

  3. Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

    SciTech Connect

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-05-15

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performed by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.

  4. Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

    SciTech Connect

    Aleshin, A. N. Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

    2015-08-15

    The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for the (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.

  5. Dependence of the electrical parameters of MBE-grown Cd{sub x}Hg{sub 1} {sub -} {sub x}Te films on the level of doping with indium

    SciTech Connect

    Varavin, V. S. Dvoretskii, S. A.; Ikusov, D. G.; Mikhailov, N. N.; Sidorov, Yu. G.; Sidorov, G. Yu.; Yakushev, M. V.

    2008-06-15

    Dependences of the minority-carrier lifetime and electron mobility in Cd{sub x}Hg{sub 1-x}Te films on their indium-doping level are studied. Films with x {approx} 0.22 grown by molecular-beam epitaxy on GaAs substrates were in situ doped with indium across their entire thickness. The temperature dependences of the lifetime were studied in the temperature range 77-300 K. The decrease in the lifetime, observed as the doping level increases, is governed by the mechanism of Auger recombination. As the doping level becomes higher, the mobility decreases in qualitative agreement with theoretical calculations.

  6. Construction of chimeric enzymes out of maize endosperm branching enzymes I and II: activity and properties.

    PubMed

    Kuriki, T; Stewart, D C; Preiss, J

    1997-11-14

    Branching enzyme I and II isoforms from maize endosperm (mBE I and mBE II, respectively) have quite different properties, and to elucidate the domain(s) that determines the differences, chimeric genes consisting of part mBE I and part mBE II were constructed. When expressed under the control of the T7 promoter in Escherichia coli, several of the chimeric enzymes were inactive. The only fully active chimeric enzyme was mBE II-I BspHI, in which the carboxyl-terminal part of mBE II was exchanged for that of mBE I at a BspHI restriction site and was purified to homogeneity and characterized. Another chimeric enzyme, mBE I-II HindIII, in which the amino-terminal end of mBE II was replaced with that of mBE I, had very little activity and was only partially characterized. The purified mBE II-I BspHI exhibited higher activity than wild-type mBE I and mBE II when assayed by the phosphorylase a stimulation assay. mBE II-I BspHI had substrate specificity (preference for amylose rather than amylopectin) and catalytic capacity similar to mBE I, despite the fact that only the carboxyl terminus was from mBE I, suggesting that the carboxyl terminus may be involved in determining substrate specificity and catalytic capacity. In chain transfer experiments, mBE II-I BspHI transferred more short chains (with a degree of polymerization of around 6) in a fashion similar to mBE II. In contrast, mBE I-II HindIII transferred more long chains (with a degree of polymerization of around 11-12), similar to mBE I, suggesting that the amino terminus of mBEs may play a role in the size of oligosaccharide chain transferred. This study challenges the notion that the catalytic centers for branching enzymes are exclusively located in the central portion of the enzyme; it suggests instead that the amino and carboxyl termini may also be involved in determining substrate preference, catalytic capacity, and chain length transfer.

  7. A Sodium-Containing Quasicrystal: Using Gold To Enhance Sodium's Covalency in Intermetallic Compounds

    SciTech Connect

    Smetana, Volodymyr; Lin, Qisheng; Pratt, Daniel K.; Kreyssig, Andreas; Ramazanoglu, Mehmet; Corbett, John D.; Goldman, Alan I.; Miller, Gordon J.

    2013-09-26

    Gold macht stabil: Na13Au12Ga15, ein natriumhaltiges thermodynamisch stabiles quasikristallines Material, wurde bei einer systematischen Studie des polaren Na-Au-Ga-Intermetallsystems entdeckt. Sein Elektron/Atom-Verhältnis von 1.75 ist für Bergman-Ikosaederphasen extrem klein, doch der substanzielle Au-Anteil sorgt für eine Hume-Rothery-Stabilisierung und neuartige polar-kovalente Na-Au-Wechselwirkungen.

  8. Effect of different stages of tensile deformation on micromagnetic parameters in high-strength, low-alloy steel

    SciTech Connect

    Vaidyanathan, S.; Moorthy, V.; Kalyanasundaram, P.; Jayakumar, T.; Raj, B.

    1999-08-01

    The influence of tensile deformation on the magnetic Barkhausen emissions (MBE) and hysteresis loop has been studied in a high-strength, low-alloy steel (HSLA) and its weldment. The magnetic measurements were made both in loaded and unloaded conditions for different stress levels. The root-mean-square (RMS) voltage of the MBE has been used for analysis. This study shows that the preyield and postyield deformation can be identified from the change in the MBE profile. The initial elastic deformation showed a linear increase in the MBE level in the loaded condition, and the MBE level remained constant in the unloaded condition. The microplastic yielding, well below the macroyield stress, significantly reduces the MBE, indicating the operation of grain-boundary dislocation sources below the macroyield stress. This is indicated by the slow increase in the MBE level in the loaded condition and the decrease in the MBE level in the unloaded condition. The macroyielding resulted in a significant increase in the MBE level in the loaded condition and, more clearly, in the unloaded condition. The increase in the MBE level during macroyielding has been attributed to the grain rotation phenomenon, in order to maintain the boundary integrity between adjacent grains, which would preferentially align the magnetic domains along the stress direction. This study shows that MBE during tensile deformation can be classified into four stages: (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding, and (4) progressive plastic deformation. A multimagnetic parameter approach, combining the hysteresis loop and MBE, has been suggested to evaluate the residual stresses.

  9. Heavy Ion Fusion Accelerator Research (HIFAR) year-end report, April 1, 1986-September 30, 1986

    SciTech Connect

    Not Available

    1986-10-01

    Activities are reported on MBE-4, the four-beam proof-of-principle ion induction linear accelerator with the capability of beam-current amplification. Mechanical aspects of MBE-4, quadrupole insulator performance, and pulsers are discussed. The computer code, SLID, has been used to help understand the longitudinal beam dynamics in MBE-4. A computer-controlled emittance scanning system is in use in MBE-4. A systematic effort is under way to discover and correct all the defects peculiar to the low energy part of the linac design code. (LEW)

  10. Heavy Ion Fusion Accelerator Research (HIFAR) year-end report, April 1, 1989--September 30, 1989

    SciTech Connect

    Not Available

    1989-12-01

    This report contains the following topics on heavy ion fusion: MBE-4 drifting beam quadrupole operating range; transverse emittance growth in MBE-4; an improved ion source for MBE-4; drifting beam studies on MBE-4; 2-MV injector; improvements in lifetime of the C{sup +} source; injector control system; Maxwell spark gap test update; ILSE cosine 2{theta} quadrupole magnet development; electrostatic quadrupole prototype development activity; induction accelerator cell development; effect of a spread in beamlet currents on longitudinal stability; and heavy ion linac driver analysis.

  11. Evaluation of Transitional and Maintenance Bilingual Programs.

    ERIC Educational Resources Information Center

    Medina, Marcello, Jr.; Escamilla, Kathy

    1992-01-01

    Studies the long-term effects of transitional (TBE) and maintenance (MBE) bilingual instructional programs on development of native and English oral language proficiency for 125 TBE-instructed Vietnamese and 298 MBE-instructed Hispanic American children from kindergarten through second grade. Discusses significant findings on positive and negative…

  12. Bidding Statutes and Minority Business Set-Aside Plans.

    ERIC Educational Resources Information Center

    Ottosen, Karl R.; Nathan, Robert

    1989-01-01

    Discusses the requirements of a typical bidding statute and explores the ramifications of the U.S. Supreme Court's "City of Richmond v. Crosan Company" decision for minority business (MBE) set-aside programs. School districts with MBE set-aside plans should determine whether these plans are constitutionally sufficient before beginning a public…

  13. A Multivariate Generalizability Analysis of the Multistate Bar Examination

    ERIC Educational Resources Information Center

    Yin, Ping

    2005-01-01

    The main purpose of this study is to examine the content structure of the Multistate Bar Examination (MBE) using the "table of specifications" model from the perspective of multivariate generalizability theory. Specifically, using MBE data collected over different years (six administrations: three from the February test and three from July test),…

  14. Evaluation of "Maths by Email." Final Report

    ERIC Educational Resources Information Center

    Kissane, Barry; McConney, Andrew

    2010-01-01

    "Maths by Email" (MbE) is a free fortnightly email newsletter produced through a partnership between CSIRO Education and the Australian Mathematical Sciences Institute (AMSI), with funding from the Australian Government Department of Education, Employment and Workplace Relations (DEEWR). The principal aim of MbE has been "to communicate that…

  15. Communication in Mind, Brain, and Education: Making Disciplinary Differences Explicit

    ERIC Educational Resources Information Center

    Kalra, Priya; O'Keeffe, Jamie K.

    2011-01-01

    Difficulties in communication within Mind, Brain, and Education (MBE) can arise from several sources. One source is differences in orientation among the areas of research, policy, and practice. Another source is lack of understanding of the entrenched and unspoken differences across research disciplines in MBE--that is, recognition that research…

  16. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  17. Hadron multiplicity in pp and AA collisions at LHC from the color glass condensate

    NASA Astrophysics Data System (ADS)

    Levin, Eugene; Rezaeian, Amir H.

    2010-09-01

    We provide quantitative predictions for the rapidity, centrality and energy dependencies of inclusive charged-hadron productions for the forthcoming LHC measurements in nucleus-nucleus collisions based on the idea of gluon saturation in the color-glass condensate framework. Our formulation gives very good descriptions of the first data from the LHC for the inclusive charged-hadron production in proton-proton collisions, the deep inelastic scattering at the Hadron-Elektron-Ring-Anlage at small Bjorken x, and the hadron multiplicities in nucleus-nucleus collisions at the Relativistic Heavy Ion Collider.

  18. Comparative Structural Characterization of Thin Al0.2Ga0.8 N/GaN and In0.17Al0.83N/GaN Heterostructures Grown on Si(111), by MBE, with Variation of Buffer Thickness

    NASA Astrophysics Data System (ADS)

    Chowdhury, Subhra; Borisov, Boris; Chow, Peter; Biswas, Dhrubes

    2015-11-01

    We report growth, by plasma-assisted molecular beam epitaxy, of thin Al0.2Ga0.8N/GaN and In0.17Al0.83N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600, 400, and 200 nm). Successful growth by critical optimization of growth conditions was followed by comparative characterization of these heterostructures by use of high resolution x-ray diffraction (HRXRD), including reciprocal space mapping (RSM), room-temperature photoluminescence (RT-PL), and high resolution transmission electron microscopy (HRTEM). The effect of different buffer thickness on the threading dislocation (TD) density of a thin 1.5 nm Al0.2Ga0.8N/In0.17Al0.83N-1.25 nm GaN-1.5 nm Al0.2Ga0.8N/In0.17Al0.83N heterostructure, was also studied. Analysis revealed increasing tensile strain with decreasing buffer thickness for AlGaN-based samples; this was confirmed by the red-shift of the GaN RT-PL peak. Reduced strain in lattice-matched InAlN-based samples resulted in a blue-shift of the GaN RT-PL peak; this was indicative of better crystallographic quality than for the AlGaN/GaN samples, which was proved by XRD-FWHM and RSM results. A substantial reduction of TD density from approximately 1010 to 108 cm-2 with increasing buffer thickness resulted in a smooth thin active region for both thick buffer structures whereas the lattice-matched InAlN/GaN-based thick buffer resulted in less effect on TD and a smooth and prominent thin active region.

  19. Quantification of microstructural features in tempered carbon steel using magnetic Barkhausen emission parameters

    NASA Astrophysics Data System (ADS)

    Moorthy, V.; Raj, Baldev; Vaidyanathan, S.; Jayakumar, T.; Kashyap, B. P.

    2000-05-01

    In ferromagnetic materials, the magnetic Barkhausen emission (MBE) during magnetization has been found to be highly sensitive with good and repeatable correlations to microstructural variations. Thus, MBE technique is complementary to the microscopy techniques and is superior for on-line characterization of ferromagnetic materials. However, this micro-magnetic non-destructive evaluation (NDE) technique could not be developed, so far, to a level of resolving and quantifying the individual microstructural features such as grain size and second phase precipitate size which vary simultaneously during heat treatment or thermal aging. In the present study, it has been shown that, in a carbon steel, on carefully optimizing the experimental parameters, the MBE profile systematically changes from a single peak to two peaks, when the quenched martensite structure dominated by high dislocation density is heat treated to produce well differentiated ferrite grain boundaries and second phase precipitates. The first MBE peak at lower current/magnetic field has been attributed to the influence of grain boundaries and the second MBE peak at higher current/magnetic field to that of second phase precipitates. To substantiate this, it has also been shown that the variations in the position of the two MBE peaks match well with the kinetics of tempering, the changes in the average size of the grains and carbides. The excellent quantitative correlation reveals that MBE technique has matured as a powerful technique for rapid on-line evaluation of metallurgical quality of as fabricated and service exposed ferromagnetic materials through finer microstructural characterization.

  20. Compressed mints and chewing gum containing magnolia bark extract are effective against bacteria responsible for oral malodor.

    PubMed

    Greenberg, Michael; Urnezis, Philip; Tian, Minmin

    2007-11-14

    Flavors and natural botanic extracts are often used in chewing gum and compressed mints for breath freshening and relief of oral malodor. The oral malodor is a result of bacterial putrification of proteinaceous materials from food or saliva. In this study, magnolia bark extract (MBE) and its two main components, magnolol and honokiol, were evaluated by the minimum inhibition concentration (MIC) test. The inhibitory effect of MBE mint was further evaluated by a kill-time assay study. In addition, an in vivo study was performed on nine healthy volunteers postlunch. Saliva samples were taken before and after subjects consumed mints and gum, with and without MBE. Listerine mouthwash was included as a positive control. The testing results indicated that MBE and its two main constituents demonstrated a strong germ-kill effect against bacteria responsible for halitosis and also Streptococcus mutans, bacteria involved in dental caries formation. The MIC of magnolol, honokiol, and MBE on Porphyromonas gingivalis, Fusobacterium nucleatum, and S. mutans ranged from 8 to 31 microg/mL. Kill-time assay results indicated that mints containing 0.2% MBE reduced more than 99.9% of three oral bacteria within 5 min of treatment. The in vivo study demonstrated that MBE containing mints reduced total salivary bacteria by 61.6% at 30 min and 33.8% at 60 min postconsumption. In comparison, the flavorless mint reduced total salivary bacteria by 3.6% at 30 min and increased total bacteria by 47.9% at 60 min. The MBE containing chewing gum reduced total salivary bacteria by 43.0% at 40 min, while placebo gum reduced total salivary bacteria by 18.0%. In conclusion, MBE demonstrated a significant antibacterial activity against organisms responsible for oral malodor and can be incorporated in compressed mints and chewing gum for improved breath-freshening benefits. PMID:17949053

  1. Heavy ion fusion half year report, October 1, 1984-March 30, 1985

    SciTech Connect

    Not Available

    1985-06-01

    Summaries of research are given for each of the following experiments: (1) MBE-4: a four-beam induction linac experiment, (2) performance of the MBE-4 injector, (3) design procedure for acceleration and bunching in an induction linac, (4) longitudinal dynamics of MBE-4, (5) transverse beam dynamics, (6) envelope functions of high-current beam, (7) electrostatic energy analyzer, (8) longitudinal beam control, (9) a capacitive beam-charge monitor for SBTE, (10) materials R and D, (11) simulations of Robertson's lens, and (12) SBTE high sigma/sub 0/ high-current stability limits. (MOW)

  2. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    NASA Technical Reports Server (NTRS)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  3. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  4. Heavy Ion Fusion Accelerator Research (HIFAR)

    SciTech Connect

    Not Available

    1991-04-01

    This report discusses the following topics: emittance variations in current-amplifying ion induction lina; transverse emittance studies of an induction accelerator of heavy ions; drift compression experiments on MBE-4 and related emittance; low emittance uniform- density C{sub s}+ sources for heavy ion fusion accelerator studies; survey of alignment of MBE-4; time-of-flight dependence on the MBE-4 quadrupole voltage; high order calculation of the multiple content of three dimensional electrostatic geometries; an induction linac injector for scaled experiments; induction accelerator test module for HIF; longitudinal instability in HIF beams; and analysis of resonant longitudinal instability in a heavy ion induction linac.

  5. 40 CFR 33.501 - What are the recordkeeping requirements of this part?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES... procurement on which the entity bid or quoted, and when; and (4) Entity's status as an MBE/WBE or...

  6. 77 FR 32087 - Agency Information Collection Activities; Proposed Collection; Comment Request; Participation by...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-31

    ... Disadvantaged Business Enterprises in Procurement Under Environmental Protection Agency (EPA) Financial...: Participation by Disadvantaged Business Enterprises in Procurement under EPA Financial Assistance Agreements... requires an entity to be certified in order to be considered a Minority Business Enterprise (MBE) or...

  7. 40 CFR 33.501 - What are the recordkeeping requirements of this part?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES... procurement on which the entity bid or quoted, and when; and (4) Entity's status as an MBE/WBE or...

  8. Inversion domains in GaN grown on sapphire

    SciTech Connect

    Romano, L.T.; Northrup, J.E.; OKeefe, M.A.

    1996-10-01

    Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all were found to contain IDBs. The IDBs in the MBE and HVPE films extended from the interface to the film surface and formed columnar domains that ranged in width from 3 to 20 nm in the MBE films and up to 100 nm in the HVPE films. For the films investigated, the MBE films had the highest density, and the MOCVD films had the lowest density of IDBs. The nucleation of inversion domains (IDs) may result from step-related inhomogeneities of the GaN/sapphire interface. {copyright} {ital 1996 American Institute of Physics.}

  9. 76 FR 10337 - Notice of Solicitation of Nominations for Membership to National Advisory Council on Minority...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-24

    ... affect minority businesses and their ability to successfully access the domestic and global marketplace... domestic business opportunities; MBE capacity building; Institutionalizing global business curriculums at... businesses; Methods for increasing global transactions with entities such as but not limited to the...

  10. 75 FR 23238 - Notice of Deadline Extension To Receive Nominations for the National Advisory Council on Minority...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-03

    ... ``green'' industries; Global and domestic barriers and impediments; Global and domestic business opportunities; MBE capacity building; Institutionalizing global business curriculums at colleges and... Minority Business Development Agency Notice of Deadline Extension To Receive Nominations for the...

  11. 75 FR 27301 - Notice of the Re-Opening of the Deadline To Receive Nominations for the National Advisory Council...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-14

    ... issues that affect minority businesses and their ability to successfully access the domestic and global... impediments; Global and domestic business opportunities; MBE capacity building; Institutionalizing global... concerning minority businesses; Methods for increasing global transactions with entities such as but...

  12. GaSb thermophotovoltaics: current challenges and solutions

    NASA Astrophysics Data System (ADS)

    Rahimi, N.; Herrera, D. J.; Aragon, A.; Shima, D. M.; Romero, O. S.; Rotter, T. J.; Busani, T.; Lavrova, O.; Balakrishnan, G.; Lester, L. F.

    2015-03-01

    GaSb thermophotovoltaic cells fabricated using Molecular Beam Epitaxy (MBE) and ion implantation techniques are studied. Challenges including different defect formation mechanisms using MBE and ion-induced defects using ion implantation were investigated by cross-sectional Transmission Electron Microscopy (XTEM), X-Ray Diffraction spectroscopy (XRD) and Scanning Electron Microscopy (SEM). For MBE grown TPVs, several approaches were used to suppress defects, including substrate preparation and using different MBE reactors. For ion-implanted TPVs, different implant doses and energies were tested to minimize the crystal damage and various Rapid Thermal Anneal (RTA) process recipes were studied to maximize the crystal recovery. Large area TPV cells with 1 × 1 cm dimensions were fabricated using these techniques, then electrically and optically characterized. Ideality factors and dark saturation currents were measured and compared for various TPVs.

  13. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  14. Smoothness and cleanliness of the GaAs (100) surface after thermal desorption of the native oxide for the synthesis of high mobility structures using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, J. J. D.; West, K. W.; Baldwin, K. W.; Pfeiffer, L. N.

    2012-10-01

    To prepare a GaAs substrate for molecular beam epitaxial (MBE) growth, the nominal ˜3 nm native oxide is typically thermally desorbed into vacuum. To test the completeness and quality of this desorption, we describe a technique, which combines MBE, thermal desorption, atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS), for detecting roughness and trace residues of contamination on (100) GaAs surfaces before MBE growth. At all desorption temperatures in the range 600-665 °C, our RHEED measurements show that the native oxide is largely desorbed within 4 min. However, the SIMS and AFM data indicate that a residue of carbon invariably remains on the GaAs (100) surface, and tenaciously resists all further attempts at its removal by thermal desorption. Since thermal desorption of the native oxide has long been the standard technique for preparing GaAs substrates for MBE growth, we suggest that MBE growth on GaAs has in general been accomplished by epitaxially growing through a partial monolayer of carbon. We believe this is the likely reason for the generally unsatisfactory quality of GaAs MBE growth after lithographic patterning on previously MBE grown structures. Our AFM data also indicate that extended native oxide desorption times or high desorption temperatures not only are ineffective at removal of the carbon residue, but are always accompanied by additional strong roughening effects on the GaAs surface morphology. Finally, we demonstrate that smoother starting surfaces for MBE growth correlate well with higher two-dimensional carrier mobilities in the resulting AlGaAs/GaAs heterostructures.

  15. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  16. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Goldman, J. A.; Brennan, K.

    1988-01-01

    During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

  17. Effect of tensile deformation on micromagnetic parameters in 0.2% carbon steel and 2.25Cr-1Mo steel

    SciTech Connect

    Moorthy, V.; Vaidyanathan, S.; Jayakumar, T.; Raj, B.; Kashyap, B.P.

    1999-04-23

    The influence of prior tensile deformation on the magnetic Barkhausen emission (MBE) and the hysteresis (B-H) curve has been studied in 0.2% carbon steel and 2.25Cr-1Mo steel under different tempered conditions. This study shows that the micromagnetic parameters can be used to identify the four stages of deformation, namely (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding and (4) progressive plastic deformation. However, it is observed that the MBE profile shows more distinct changes at different stages of tensile deformation than the hysteresis curve. It has been established that the beginning of microplastic yielding and macroyielding can be identified from the MBE profile which is not possible from the stress-strain plot. The onset of microplastic yielding can be identified from the decrease in the MBE peak height. The macroyielding can be identified from the merging of the initially present two-peak MBE profile into a single central peak with relatively higher peak height and narrow profile width. The difference between the variation of MBE and hysteresis curve parameters with strain beyond macroyielding indicates the difference in the deformation state of the surface and bulk of the sample.

  18. Low-Temperature Growth and Doping of Mercury-Based II-Vi Multiple Quantum Well Structures by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lansari, Yamina

    The growth of Hg-based single layers and multiple quantum well structures by conventional molecular beam epitaxy (MBE) and photoassisted MBE was studied. The use of photoassisted MBE, an epitaxial growth technique developed at NCSU, has resulted in a substantial reduction of the film growth temperature. Indeed, substrate temperatures 50 to 100^circC lower than those customarily used by others for conventional MBE growth of Hg-based layers were successfully employed. Photoassisted MBE allowed the preparation of excellent structural quality HgTe layers (FWHM for the (400) diffraction peak ~ 40 arcsec), HgCdTe layers (FWHM for the (400) diffraction peak ~ 14 arcsec), and HgTeCdTe superlattices (FWHM for the (400) diffraction peak ~ 28 arcsec). In addition, n-type and p-type modulation-doping of Hg-based multilayers was accomplished by photoassisted MBE. This technique has been shown to have a significant effect on the growth process kinetics as well as on the desorption rates of the film species, thereby affecting dopant incorporation mechanisms and allowing for the successful substitutional doping of the multilayer structures. Finally, surface morphology studies were completed using scanning electron microscopy (SEM) and Nomarsky optical microscopy to study the effects of substrate surface preparation, growth initiation, and growth parameters on the density of pyramidal hillocks, a common growth defect plaguing the Hg-based layers grown in the (100) direction. Conditions which minimize the hillock density for (100) film growth have been determined.

  19. Comparison of total water vapor column from GOME-2 on MetOp-A against ground-based GPS measurements at the Iberian Peninsula.

    PubMed

    Román, R; Antón, M; Cachorro, V E; Loyola, D; Ortiz de Galisteo, J P; de Frutos, A; Romero-Campos, P M

    2015-11-15

    Water vapor column (WVC) obtained by GOME-2 instrument (GDP-4.6 version) onboard MetOp-A satellite platform is compared against reference WVC values derived from GPS (Global Positioning System) instruments from 2007 to 2012 at 21 places located at Iberian Peninsula. The accuracy and precision of GOME-2 to estimate the WVC is studied for different Iberian Peninsula zones using the mean (MBE) and the standard deviation (SD) of the GOME-2 and GPS differences. A direct comparison of all available data shows an overestimation of GOME-2 compared to GPS with a MBE of 0.7 mm (10%) and a precision quantified by a SD equals to 4.4mm (31%). South-Western zone presents the highest overestimation with a MBE of 1.9 mm (17%), while Continental zone shows the lowest SD absolute value (3.3mm) due mainly to the low WVC values reached at this zone. The influence of solar zenith angle (SZA), cloud fraction (CF), and the type of surface and its albedo on the differences between GOME-2 and GPS is analyzed in detail. MBE and SD increase when SZA increases, but MBE decreases (taking negative values) when CF increases and SD shows no significant dependence on CF. Under cloud-free conditions, the differences between WVC from GOME-2 and GPS are within the WVC error given by GOME-2. The changes of MBE and SD on Surface Albedo are not so evident, but MBE slightly decreases when the Surface Albedo increases. WVC from GOME-2 is, in general, more precise for land than for sea pixels.

  20. Comparison of total water vapor column from GOME-2 on MetOp-A against ground-based GPS measurements at the Iberian Peninsula.

    PubMed

    Román, R; Antón, M; Cachorro, V E; Loyola, D; Ortiz de Galisteo, J P; de Frutos, A; Romero-Campos, P M

    2015-11-15

    Water vapor column (WVC) obtained by GOME-2 instrument (GDP-4.6 version) onboard MetOp-A satellite platform is compared against reference WVC values derived from GPS (Global Positioning System) instruments from 2007 to 2012 at 21 places located at Iberian Peninsula. The accuracy and precision of GOME-2 to estimate the WVC is studied for different Iberian Peninsula zones using the mean (MBE) and the standard deviation (SD) of the GOME-2 and GPS differences. A direct comparison of all available data shows an overestimation of GOME-2 compared to GPS with a MBE of 0.7 mm (10%) and a precision quantified by a SD equals to 4.4mm (31%). South-Western zone presents the highest overestimation with a MBE of 1.9 mm (17%), while Continental zone shows the lowest SD absolute value (3.3mm) due mainly to the low WVC values reached at this zone. The influence of solar zenith angle (SZA), cloud fraction (CF), and the type of surface and its albedo on the differences between GOME-2 and GPS is analyzed in detail. MBE and SD increase when SZA increases, but MBE decreases (taking negative values) when CF increases and SD shows no significant dependence on CF. Under cloud-free conditions, the differences between WVC from GOME-2 and GPS are within the WVC error given by GOME-2. The changes of MBE and SD on Surface Albedo are not so evident, but MBE slightly decreases when the Surface Albedo increases. WVC from GOME-2 is, in general, more precise for land than for sea pixels. PMID:26172599

  1. Validation of Predicted Residual Stresses within Direct Chill Cast Magnesium Alloy Slab

    NASA Astrophysics Data System (ADS)

    Turski, Mark; Paradowska, Anna; Zhang, Shu-Yan; Mortensen, Dag; Fjaer, Hallvard; Grandfield, John; Davis, Bruce; DeLorme, Rick

    2012-05-01

    A significant level of cold cracking has been observed within direct chill (DC) cast, high-strength magnesium alloy Elektron WE43. These cracks have been attributed to the formation of significant residual stresses during casting. A finite-element modeling (FEM) code, which is called ALSIM, has been used to predict the residual stress within the DC-cast slab. Verification of the predicted residual stress field within an 870 × 315-mm sized slab has been carried out using neutron diffraction measurements. Given that measurements in such large-scale components using diffraction measurements are particularly challenging and expensive, the efficient use of neutron diffraction measurements is emphasized. This has included the use of sectioning, allowing the residual stress within the slab to be mapped in detail.

  2. Molecular Beam Epitaxial Growth of Cuprate Superconductors and Related Phases

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell Galen

    The discovery of a class of new layered crystalline materials which exhibit superconductivity at unprecedented temperatures has opened new possibilities for the future of electronic devices and for molecular beam epitaxy (MBE) as a potential method to grow device structures containing these materials. The low growth temperature and atomic layering capability that MBE has demonstrated for the growth of semiconductors suggests that the MBE growth of non-equilibrium layered structures and metastable phases within oxide systems encompassing the high transition temperature (T _{rm c}) superconductors might be possible. If available, such a growth technique would be useful not only for device fabrication, but would offer an unparalleled technique to fabricate metastable superlattice mixtures to test high T_{ rm c} theories, which might then allow the growth of even higher temperature superconducting compounds. In contrast to the simplicity of the materials systems to which MBE has been successfully applied, the growth of fully oxidized, multi-element compounds by MBE involves significant challenges. This thesis describes research to develop in situ growth techniques allowing the growth of layered superconducting cuprates and related phases by MBE, and characterization of grown films. The conditions necessary to achieve this in situ ability, including the use of highly oxidizing species in order to maintain a long mean free path necessary for MBE, appropriate substrate temperature, precise composition control, and suitable substrates are discussed. The MBE apparatus used and design improvements made during the course of this research are described. The experimental results of films grown in the Dy-Ba-Cu-O and Bi-Sr-Ca-Cu-O systems demonstrate the ability of this shuttered, layer-by-layer MBE technique to grow smooth, layered, metastable compounds, including ordered superlattices, in situ using ozone. Both cross -sectional TEM images and a comparison of the observed x -ray

  3. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  4. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  5. Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2014-07-01

    We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

  6. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  7. The Ciprofloxacin Impact on Biofilm Formation by Proteus Mirabilis and P. Vulgaris Strains

    PubMed Central

    Kwiecinska-Pirog, Joanna; Skowron, Krzysztof; Bartczak, Wojciech; Gospodarek-Komkowska, Eugenia

    2016-01-01

    Background Proteus spp. bacilli belong to opportunistic human pathogens, which are primarily responsible for urinary tract and wound infections. An important virulence factor is their ability to form biofilms that greatly reduce the effectiveness of antibiotics in the site of infection. Objectives The aim of this study was to determine the value of the minimum concentration of ciprofloxacin that eradicates a biofilm of Proteus spp. strains. Materials and Methods A biofilm formation of 20 strains of P. mirabilis and 20 strains of P. vulgaris were evaluated by a spectrophotometric method using 0.1% 2, 3, 5-Triphenyl-tetrazolium chloride solution (TTC, AVANTORTM). On the basis of the results of the absorbance of the formazan, a degree of reduction of biofilm and minimum biofilm eradication (MBE) values of MBE50 and MBE90 were determined. Results All tested strains formed a biofilm. A value of 1.0 μg/mL ciprofloxacin is MBE50 for the strains of both tested species. An MBE90 value of ciprofloxacin for isolates of P. vulgaris was 2 μg/mL and for P. mirabilis was 512 μg/mL. Conclusions Minimum biofilm eradication values of ciprofloxacin obtained in the study are close to the values of the minimal inhibition concentration (MIC). PMID:27303616

  8. Enforcing temporal control of maternal mRNA translation during oocyte cell-cycle progression.

    PubMed

    Arumugam, Karthik; Wang, Yiying; Hardy, Linda L; MacNicol, Melanie C; MacNicol, Angus M

    2010-01-20

    Meiotic cell-cycle progression in progesterone-stimulated Xenopus oocytes requires that the translation of pre-existing maternal mRNAs occur in a strict temporal order. Timing of translation is regulated through elements within the mRNA 3' untranslated region (3' UTR), which respond to cell cycle-dependant signalling. One element that has been previously implicated in the temporal control of mRNA translation is the cytoplasmic polyadenylation element (CPE). In this study, we show that the CPE does not direct early mRNA translation. Rather, early translation is directed through specific early factors, including the Musashi-binding element (MBE) and the MBE-binding protein, Musashi. Our findings indicate that although the cyclin B5 3' UTR contains both CPEs and an MBE, the MBE is the critical regulator of early translation. The cyclin B2 3' UTR contains CPEs, but lacks an MBE and is translationally activated late in maturation. Finally, utilizing antisense oligonucleotides to attenuate endogenous Musashi synthesis, we show that Musashi is critical for the initiation of early class mRNA translation and for the subsequent activation of CPE-dependant mRNA translation.

  9. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  10. Comparison of Island Formation Between Pulsed Laser Deposition and Molecular Beam Epitaxy:. a Kinetic Monte Carlo Simulation

    NASA Astrophysics Data System (ADS)

    Tan, X.; Zhou, Y. C.; Zheng, X. J.

    Based on a hexagonal lattice which includes deposition, dissociation, and diffusion, we performed a kinetic Monte Carlo model to explore thin film growth via pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) within the submonolayer regime. First and second nearest-neighbor interactions calculated by the Morse potential are taken into account in this case. These simulations show that thin film deposition by PLD is markedly different from that by MBE. With PLD, as pulse duration decreases, the island density increases and the island size decreases. Similarly, at temperature T = 550 K, the scaling function for MBE is rather similar to that of the analytical prediction for a critical island size of i = 2, while the scaling function for PLD changes from an i = 1 behavior to an i = 0 behavior with the decrease in pulse duration.

  11. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  12. High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

    SciTech Connect

    Ratcliff, C.; Grassman, T. J.; Ringel, S. A.; Carlin, J. A.

    2011-10-03

    Post-growth surface morphologies of high-temperature homoepitaxial GaP films grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been studied. Smooth, stepped surface morphologies of MBE-grown layers, measured by atomic force microscopy, were found for a wide range of substrate temperatures and P{sub 2}:Ga flux ratios. A MOCVD-based growth study performed under similar conditions to MBE-grown samples shows a nearly identical smooth, step-flow surface morphology, presenting a convergence of growth conditions for the two different methods. The additional understanding of GaP epitaxy gained from this study will impact its use in applications that include GaP-based device technologies, III-V metamorphic buffers, and III-V materials integration with silicon.

  13. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Yan, Yanfa; Wei, Su-Huai

    2015-10-01

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  14. Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices

    SciTech Connect

    Cheng, K. Y.

    2013-09-15

    Molecular beam epitaxy (MBE) is a versatile ultrahigh vacuum technique for growing multiple epitaxial layers of semiconductor crystals with high precision. The extreme control of the MBE technique over composition variation, interface sharpness, impurity doping profiles, and epitaxial layer thickness to the atomic level makes it possible to demonstrate a wide variety of novel semiconductor structures. Since its invention nearly 40 years ago, the MBE technique has evolved from a laboratory apparatus for exploring new materials and novel devices to a favored tool for the mass production of III–V high-speed devices. This paper will review some of the past developments in this technology and propose an outlook of future developments.

  15. In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffraction

    NASA Astrophysics Data System (ADS)

    Isu, Toshiro; Watanabe, Akiyoshi; Hata, Masayuki; Katayama, Yoshifumi

    1990-03-01

    Microscopic observations of epitaxial growth layers of GaAs were made with a scanning microprobe reflection high energy electron diffraction (RHEED). A scanning microprobe electron gun has been combined with a specially designed molecular beam epitaxy (MBE) system with both solid sources and gas sources. Scanning reflection electron microscope (SREM) images using the specular beam spot revealed granular features over the entire surfaces of MBE-grown GaAs layers, which were thought to come from undulation of the surface. Similar features of the surface were observed on the layers grown by gas-source MBE using trimethylgallium and arsine. A microscopic surface morphology was found to be fairly rough and the features depended on the species of the sources and growth conditions.

  16. Molecular beam epitaxy of SrTiO3 with a growth window

    NASA Astrophysics Data System (ADS)

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-01

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  17. A molecular beam epitaxy facility for in situ neutron scattering

    SciTech Connect

    Dura, J. A.; LaRock, J.

    2009-07-15

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  18. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  19. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  20. Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

    SciTech Connect

    Aho, A.; Korpijärvi, V.-M.; Tukiainen, A.; Puustinen, J.; Guina, M.

    2014-12-07

    We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N flow, and RF power, and group III growth rate. The semi-empirical model is shown to be repeatable with a maximum error of 6%. The model was validated for two different MBE systems by growing GaInNAs on GaAs(100) with variable nitrogen composition of 0%–6%.

  1. Two Different Methods for Numerical Solution of the Modified Burgers' Equation

    PubMed Central

    Karakoç, Seydi Battal Gazi; Başhan, Ali; Geyikli, Turabi

    2014-01-01

    A numerical solution of the modified Burgers' equation (MBE) is obtained by using quartic B-spline subdomain finite element method (SFEM) over which the nonlinear term is locally linearized and using quartic B-spline differential quadrature (QBDQM) method. The accuracy and efficiency of the methods are discussed by computing L 2 and L ∞ error norms. Comparisons are made with those of some earlier papers. The obtained numerical results show that the methods are effective numerical schemes to solve the MBE. A linear stability analysis, based on the von Neumann scheme, shows the SFEM is unconditionally stable. A rate of convergence analysis is also given for the DQM. PMID:25162064

  2. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  3. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  4. Inverse scattering transform analysis of Stokes-anti-Stokes stimulated Raman scattering

    NASA Astrophysics Data System (ADS)

    Gerdjikov, V. S.; Kostov, N. A.

    1996-11-01

    A system of Maxwell-Bloch type equations (MBE's), describing stimulated Raman scattering with both Stokes and anti-Stokes waves taken into account, is investigated. We introduce variables S3 and S+/-, which are bilinear in the electromagnetic fields, and prove that the corresponding equations possess Lax representation. This fact is used to obtain additional solutions for S3, S+/- and for the MBE's which include solitons, periodical waves, and self-similarity solutions. The transient and bright threshold solitons are also analyzed.

  5. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  6. Convergence of the Many-Body Expansion for Energy and Forces for Classical Polarizable Models in the Condensed Phase.

    PubMed

    Demerdash, Omar; Head-Gordon, Teresa

    2016-08-01

    We analyze convergence of energies and forces for the AMOEBA classical polarizable model when evaluated as a many-body expansion (MBE) against the corresponding N-body parent potential in the context of a condensed-phase water simulation. This is in contrast to most MBE formulations based on quantum mechanics, which focus only on convergence of energies for gas-phase clusters. Using a single water molecule as a definition of a body, we find that truncation of the MBE at third order, 3-AMOEBA, captures direct polarization exactly and yields apparent good convergence of the mutual polarization energy. However, it renders large errors in the magnitude of polarization forces and requires at least fourth-order terms in the MBE to converge toward the parent potential gradient values. We can improve the convergence of polarization forces for 3-AMOEBA by embedding the polarization response of dimers and trimers within a complete representation of the fixed electrostatics of the entire system. We show that the electrostatic embedding formalism helps identify the specific configurations involving linear hydrogen-bonding arrangements that are poorly convergent at the 3-body level. By extending the definition of a body to be a large water cluster, we can reduce errors in forces to yield an approximate polarization model that is up to 10 times faster than the parent potential. The 3-AMOEBA model offers new ways to investigate how the properties of bulk water depend on the degree of connectivity in the liquid. PMID:27405002

  7. Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

    SciTech Connect

    Tivakornsasithorn, K.; Liu, X.; Li, X.; Dobrowolska, M.; Furdyna, J. K.

    2014-07-28

    We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

  8. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  9. A Substantive Process Analysis of Responses to Items from the Multistate Bar Examination

    ERIC Educational Resources Information Center

    Bonner, Sarah M.; D'Agostino, Jerome V.

    2012-01-01

    We investigated examinees' cognitive processes while they solved selected items from the Multistate Bar Exam (MBE), a high-stakes professional certification examination. We focused on ascertaining those mental processes most frequently used by examinees, and the most common types of errors in their thinking. We compared the relationships between…

  10. Linking Mind, Brain, and Education to Clinical Practice: A Proposal for Transdisciplinary Collaboration

    ERIC Educational Resources Information Center

    Ronstadt, Katie; Yellin, Paul B.

    2010-01-01

    It has been suggested that the field of Mind, Brain, and Education (MBE) requires a stable infrastructure for translating research into practice. Hinton and Fischer (2008) point to the academic medical center as a model for similar translational work and suggest a similar approach for linking scientists to research schools. We propose expanding…

  11. Mind, Brain and Education: A Decade of Evolution

    ERIC Educational Resources Information Center

    Schwartz, Marc

    2015-01-01

    This article examines the evolution of Mind, Brain, and Education (MBE), the field, alongside that of the International Mind, Brain and Education Society (IMBES). The reflections stem mostly from my observations while serving as vice president, president-elect, and president of IMBES during the past 10 years. The article highlights the evolution…

  12. An Education Grounded in Biology: Interdisciplinary and Ethical Considerations

    ERIC Educational Resources Information Center

    Gardner, Howard

    2009-01-01

    Work in the new area of Mind, Brain, and Education (MBE) raises epistemological and ethical issues. With respect to epistemology, the norms of the component disciplines must be honored and the resulting amalgam must be more than a mere sum of the parts. With respect to ethics, the roles of scientist, educator, and practitioner each raise ethical…

  13. The Birth of a Field and the Rebirth of the Laboratory School

    ERIC Educational Resources Information Center

    Schwartz, Marc; Gerlach, Jeanne

    2011-01-01

    We describe the emergence of a new field, "Mind Brain and Education", dedicated to the science of learning, as well as the roles researchers, policy makers, and educators need to play in developing this collaborative effort. The article highlights the challenges that MBE faces and the strategy researchers and educators in Texas are developing to…

  14. Can the Differences between Education and Neuroscience Be Overcome by Mind, Brain, and Education?

    ERIC Educational Resources Information Center

    Samuels, Boba M.

    2009-01-01

    The new field of Mind, Brain, and Education (MBE)--sometimes called educational neuroscience--is posited as a mediator between neuroscience and education. Several foundational concerns, however, can be raised about this emerging field. The differences between neuroscience and education are many, including differences in their histories,…

  15. 40 CFR 33.205 - How does an entity become certified by EPA?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL... application. In accordance with § 33.204, an entity may apply to EPA's Office of Small and Disadvantaged Business Utilization (EPA OSDBU) for certification as an MBE or WBE. EPA's Regional Offices will...

  16. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Minority Business Enterprises 2426.7001 Policy. It is the policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its procurement program, to the extent permitted by law and consistent with its primary mission. A...

  17. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Minority Business Enterprises 2426.7001 Policy. It is the policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its procurement program, to the extent permitted by law and consistent with its primary mission. A...

  18. 23 CFR 230.202 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or disadvantaged business enterprise (DBE), all defined under 49 CFR part 23. This expanded definition is used only... for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a)...

  19. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Minority Business Enterprises 2426.7001 Policy. It is the policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its procurement program, to the extent permitted by law and consistent with its primary mission. A...

  20. 23 CFR 230.202 - Definitions.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or disadvantaged business enterprise (DBE), all defined under 49 CFR part 23. This expanded definition is used only... for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a)...

  1. Group Blogs as Toolkits to Support Learning Environments in Statistics Subject: A Qualitative Case Study

    ERIC Educational Resources Information Center

    Hashim, Mohamad Hisyam Mohd

    2012-01-01

    In this paper, we describe the introduction of blogs to a class of Masters in Technical and Vocational Education students taking the MBE 1223 Statistics in Education module in Universiti Tun Hussein Onn Malaysia (UTHM). The purpose of the analysis is to elaborate on the perception of the participants towards blogs before, during and after training…

  2. 30. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    30. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM ATOP PARKING STRUCTURE (MBE BUILDING AT LEFT REAR) (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  3. 23. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM ALAMEDA STREET; THE REA LOADING DOCK AND MBE BUILDING ARE VISIBLE ON THE FAR SIDE OF THE PARKING LOT (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  4. 32. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    32. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM THIRD FLOOR OF MBE BUILDING SHOWING ROOF OF REA LOADING DOCK (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  5. On local pairs vs. BCS: Quo vadis high-Tc superconductivity

    DOE PAGES

    Pavuna, D.; Dubuis, G.; Bollinger, A. T.; Wu, J.; He, X.; Bozovic, I.

    2016-07-28

    Since the discovery of high-temperature superconductivity in cuprates, proposals have been made that pairing may be local, in particular in underdoped samples. Furthermore, we briefly review evidence for local pairs from our experiments on thin films of La 2–xSrxCuO4, synthesized by atomic layer-by-layer molecular beam epitaxy (ALL-MBE).

  6. 75 FR 52001 - Agency Information Collection Activities; Submission to OMB for Review and Approval; Comment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-24

    ... (74 FR 48265), EPA sought comments on this ICR pursuant to 5 CFR 1320.8(d). EPA received no comments... Request; Minority Business Enterprise/ Woman Business Enterprise (MBE/WBE) Utilization Under Federal... are available electronically. Once in the system, select ``docket search,'' then key in the docket...

  7. Heavy ion fusion end of the year report, April 1, 1984-September 30, 1984

    SciTech Connect

    Not Available

    1984-12-01

    Research progress is reported for each of the following areas: (1) multiple-beam experiment, (2) current amplification in MBE-4, (3) single-beam transport experiment, (4) neutral beam focusing experiment, (5) range energy measurements, (6) source development work, and (7) induction linac component development. (MOW)

  8. A First Course in Mind, Brain, and Education

    ERIC Educational Resources Information Center

    Blake, Peter R.; Gardner, Howard

    2007-01-01

    We describe what may well be the first course devoted explicitly to the topic of Mind, Brain, and Education (MBE). In the course, students examine four central topics (literacy, numeracy, emotion/motivation, and conceptual change) through the perspectives of psychology, neuroscience, genetics, and education. We describe the pedagogical tools we…

  9. The development of 3rd generation IR detectors at AIM

    NASA Astrophysics Data System (ADS)

    Ziegler, J.; Eich, D.; Mahlein, M.; Schallenberg, T.; Scheibner, R.; Wendler, J.; Wenisch, J.; Wollrab, R.; Daumer, V.; Rehm, R.; Rutz, F.; Walther, M.

    2011-06-01

    3rd generation IR modules - dual-color (DC), dual-band (DB), and large format two-dimensional arrays - require sophisticated production technologies such as molecular beam epitaxy (MBE) as well as new array processing techniques, which can satisfy the rising demand for increasingly complex device structures and low cost detectors. AIM will extend its future portfolio by high performance devices which make use of these techniques. The DC MW / MW detectors are based on antimonide type-II superlattices (produced by MBE at Fraunhofer IAF, Freiburg) in the 384x288 format with a 40 μm pitch. For AIM, the technology of choice for MW / LW DB FPAs is MCT MBE on CdZnTe substrates, which has been developed in cooperation with IAF, Freiburg. 640x512, 20 μm pitch Focal Plane Arrays (FPAs) have been processed at AIM. The growth of MW MCT MBE layers on alternate substrates is challenging, but essential for competitive fabrication of large two-dimensional arrays such as megapixel (MW 1280x1024, 15 μm pitch) FPAs. This paper will present the development status and latest results of the above-mentioned 3rd Gen FPAs and Integrated Detector Cooler Assemblies (IDCAs).

  10. 40 CFR 205.158 - Labeling requirements.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... HOD Honda HON Husqvarna HUS JAWA/CZ JAW Kawasaki KAW KTM KTM Laverda LAV Moto Benilli BEN Moto Guzzi GUZ Moto Morini MOR MV Agusta MVA Norton Triumph TRI Rokon ROK Suzuki SUZ Yamaha YAM (8) Moped... MAL Morini MOI Motobecane/Solex MBE Moto Guzzi GUZ Negrini NEG Odyssey ODY Pacer PAC Pack-A-Way...

  11. UVA photoirradiation of methylated benzo[a]pyrene and benzo[e]pyrene leading to induction of lipid peroxidation.

    PubMed

    Sáenz, Diógenes Herreño; Xia, Qingsu; Fu, Peter P

    2007-06-01

    Polycyclic aromatic hydrocarbons (PAHs) are widespread genotoxic environmental pollutants and potentially pose a health risk to humans. Although the biological and toxicological activities, including metabolism, mutagenicity and carcinogenicity of PAHs have been thoroughly studied, their phototoxicity and photo-induced biological activities have not been well examined. In this research, we studied the photoirradiation of isomeric methylbenzo[a]pyrene (MBaP) and methylbenzo[e]pyrene (MBeP) by UVA light in the presence of a lipid, methyl linoleate, and evaluated the potential of these compounds to induce lipid peroxidation. The compounds chosen for study included BaP, 3-MBaP, 4-MBaP, 6-MBaP, 7-MBaP, 10-MBaP, BeP, 4-MBeP, and 9-MBeP. The results indicate that upon photoirradiation by UVA at 7 and 21 J/cm2, these compounds induced lipid peroxidation. The levels of the induced lipid peroxidation were similar among BaP and the isomeric MBaPs, and among the BeP and MBePs, with the BaP group higher than the BeP group. There was also a co-relation between the UV A light dose and the level of lipid peroxidation induced. Lipid peroxide formation was inhibited by NaN3 (singlet oxygen and free radical scavenger) and was enhanced by the presence of deuterium oxide (D2O) (extends singlet oxygen lifetime). These results suggest that photoirradiation of MBaPs and MBePs by UVA light generates reactive oxygen species (ROS), which induce lipid peroxidation.

  12. Insolation-induced mid-Brunhes transition in Southern Ocean ventilation and deep-ocean temperature.

    PubMed

    Yin, Qiuzhen

    2013-02-14

    Glacial-interglacial cycles characterized by long cold periods interrupted by short periods of warmth are the dominant feature of Pleistocene climate, with the relative intensity and duration of past and future interglacials being of particular interest for civilization. The interglacials after 430,000 years ago were characterized by warmer climates and higher atmospheric concentrations of carbon dioxide than the interglacials before, but the cause of this climatic transition (the so-called mid-Brunhes event (MBE)) is unknown. Here I show, on the basis of model simulations, that in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic bottom water formation and Southern Ocean ventilation. My results also show that strong westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and by changes in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward systematic difference in the astronomical parameters between the interglacials before and after 430,000 years ago. Rather than being a real 'event', the apparent MBE seems to have resulted from a series of individual interglacial responses--including notable exceptions to the general pattern--to various combinations of insolation conditions. Consequently, assuming no anthropogenic interference, future interglacials may have pre- or post-MBE characteristics without there being a systematic change in forcings. These findings are a first step towards understanding the magnitude change of the interglacial carbon dioxide concentration around 430

  13. Comparison of Four Physiotherapy Regimens in the Treatment of Long-Term Mechanical Low Back Pain

    PubMed Central

    Adegoke, Babatunde O.A.; Ogunlade, Samuel O.

    2010-01-01

    Abstract Objective: This study compared efficacy of combinations of Back Muscles Endurance Exercise (BMEE) and McKenzie Exercise (ME) and McKenzie Back Care Education (MBE) in the management of long term mechanical Low Back Pain (LBP). Subjects and Methods: A single-blind randomized controlled comparative trial was employed. Seventy three participants mean age 45.3 ± 8.1 years were recruited for the study but only 53 completed the study. Participants in group A were treated with a combination of BMEE, ME and MBE. Group B: A combination BMEE and MBE. Group C: A combination of ME and MBE. Group D: MBE only. Participants were seen thrice weekly for 8 weeks. They were measured for pain intensity, lumbar flexibility, activities limitation and self esteem. Data were analysed using descriptive and inferential statistics of F-test. Significance was set at 0.05 alpha-level. Results: At the end of the study, the four treatment groups had significant reduction in pain intensity p<0.05. Post hoc analysis showed groups A, B, and C had significantly greater reduction than D, and groups A and C had significantly greater reduction than B. Groups A, B and C also had significant improvement in activities limitation p<0.05. Post hoc analysis showed groups A, B and C had significantly greater improvement than D, and group B significantly greater improvement than C. Conclusion: Combination physiotherapy regimens proved effective in the management of long- term mechanical LBP. Regimen A is recommended in managing long-term mechanical LBP. PMID:25792891

  14. Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in Cd x Hg1- x Te Heteroepitaxial Layers

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Talipov, N. Kh.

    2013-12-01

    Processes of electrical activation of ion-implanted boron and nitrogen atoms in Cd x Hg1- x Te (CMT) heteroepitaxial layers grown by methods of molecular-beam epitaxy (HEL CMT MBE) and liquid-phase epitaxy (LPE CMT) have been investigated; likewise in bulk crystals of CMT with low-temperature annealings under anodic oxide. The possibility has been demonstrated of using anodic oxide as an efficient mask for postimplantation annealings of p-type HEL CMT MBE in the temperature interval Т = 200-250°C without disruption of the composition of the variband layer or alteration of the electrophysical properties of the structure. It has been established that in HEL CMT MBE the efficiency of activation of boron as a slowly diffusing donor impurity is lowered with growth of the dose of the B+ ions and is increased by thermal cycling from Т = 77 K to room temperature. Implanted nitrogen, in contrast to boron, is a rapidly diffusing acceptor impurity in CMT, efficiently compensating both radiation donor centers and activated boron. The degree of electrical activation of nitrogen grows substantially upon thermal cycling. It has been shown that the mobility spectrum is an efficient method for monitoring the process of electrical activation of boron in p-type HEL CMT MBE. Mesa photodiodes based on activated boron in p-type HEL CMT MBE with long-wavelength photosensitivity boundary λc = 11 μm, prepared here for the first time, had a high maximum value of the product of the differential resistance by the area of the photodiode R d A = (6 - 8)ṡ102 Ωṡcm2, product R 0 A = 5 - 6 Ωṡcm2 (at zero bias), and a diffusion ledge on the inverse branch of the current-voltage ( I- V) characteristic out to a bias voltage of 1.3 V.

  15. Middle to Late Pleistocene vegetation and climate change in subtropical southern East Africa

    NASA Astrophysics Data System (ADS)

    Castañeda, Isla S.; Caley, Thibaut; Dupont, Lydie; Kim, Jung-Hyun; Malaizé, Bruno; Schouten, Stefan

    2016-09-01

    In this study we investigate Pleistocene vegetation and climate change in southern East Africa by examining plant leaf waxes in a marine sediment core that receives terrestrial runoff from the Limpopo River. The plant leaf wax records are compared to a multi-proxy sea surface temperature (SST) record and pollen assemblage data from the same site. We find that Indian Ocean SST variability, driven by high-latitude obliquity, exerted a strong control on the vegetation of southern East Africa during the past 800,000 yr. Interglacial periods were characterized by relatively wetter and warmer conditions, increased contributions of C3 vegetation, and higher SST, whereas glacial periods were marked by cooler and arid conditions, increased contributions of C4 vegetation, and lower SST. We find that Marine Isotope Stages (MIS) 5e, 11c, 15e and 7a-7c are strongly expressed in the plant leaf wax records but MIS 7e is absent while MIS 9 is rather weak. Our plant leaf wax records also record the climate transition associated with the Mid-Brunhes Event (MBE) suggesting that the pre-MBE interval (430-800 ka) was characterized by higher inputs from grasses in comparison to relatively higher inputs from trees in the post-MBE interval (430 to 0 ka). Differences in vegetation and SST of southern East Africa between the pre- and post-MBE intervals appear to be related to shifts in the location of the Subtropical Front. Comparison with vegetation records from tropical East Africa indicates that the vegetation of southern East Africa, while exhibiting glacial-interglacial variability and notable differences between the pre- and post-MBE portions of the record, likely did not experience such dramatic extremes as occurred to the north at Lake Malawi.

  16. Insolation-induced mid-Brunhes transition in Southern Ocean ventilation and deep-ocean temperature.

    PubMed

    Yin, Qiuzhen

    2013-02-14

    Glacial-interglacial cycles characterized by long cold periods interrupted by short periods of warmth are the dominant feature of Pleistocene climate, with the relative intensity and duration of past and future interglacials being of particular interest for civilization. The interglacials after 430,000 years ago were characterized by warmer climates and higher atmospheric concentrations of carbon dioxide than the interglacials before, but the cause of this climatic transition (the so-called mid-Brunhes event (MBE)) is unknown. Here I show, on the basis of model simulations, that in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic bottom water formation and Southern Ocean ventilation. My results also show that strong westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and by changes in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward systematic difference in the astronomical parameters between the interglacials before and after 430,000 years ago. Rather than being a real 'event', the apparent MBE seems to have resulted from a series of individual interglacial responses--including notable exceptions to the general pattern--to various combinations of insolation conditions. Consequently, assuming no anthropogenic interference, future interglacials may have pre- or post-MBE characteristics without there being a systematic change in forcings. These findings are a first step towards understanding the magnitude change of the interglacial carbon dioxide concentration around 430

  17. Estimation of Carbon Dioxide Storage Capacity for Depleted Gas Reservoirs

    NASA Astrophysics Data System (ADS)

    Lai, Yen Ting; Shen, Chien-Hao; Tseng, Chi-Chung; Fan, Chen-Hui; Hsieh, Bieng-Zih

    2015-04-01

    A depleted gas reservoir is one of the best options for CO2 storage for many reasons. First of all, the storage safety or the caprock integrity has been proven because the natural gas was trapped in the formation for a very long period of time. Also the formation properties and fluid flow characteristics for the reservoir have been well studied since the discovery of the gas reservoir. Finally the surface constructions and facilities are very useful and relatively easy to convert for the use of CO2 storage. The purpose of this study was to apply an analytical approach to estimate CO2 storage capacity in a depleted gas reservoir. The analytical method we used is the material balance equation (MBE), which have been widely used in natural gas storage. We proposed a modified MBE for CO2 storage in a depleted gas reservoir by introducing the z-factors of gas, CO2 and the mixture of the two. The MBE can be derived to a linear relationship between the ratio of pressure to gas z-factor (p/z) and the cumulative term (Gp-Ginj, where Gp is the cumulative gas production and Ginj is the cumulative CO2 injection). The CO2 storage capacity can be calculated when constraints of reservoir recovery pressure are adopted. The numerical simulation was also used for the validation of the theoretical estimation of CO2 storage capacity from the MBE. We found that the quantity of CO2 stored is more than that of gas produced when the reservoir pressure is recovered from the abandon pressure to the initial pressure. This result was basically from the fact that the gas- CO2 mixture z-factors are lower than the natural gas z-factors in reservoir conditions. We also established a useful p/z plot to easily observe the pressure behavior of CO2 storage and efficiently calculate the CO2 storage capacity. The application of the MBE we proposed was demonstrated by a case study of a depleted gas reservoir in northwestern Taiwan. The estimated CO2 storage capacities from conducting reservoir simulation

  18. The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

    DOE PAGES

    Yang, Meiyin; Allard, Lawrence F.; Ji, Nian; Zhang, Xiaowei; Yu, Guang-Hua; Wang, Jian -Ping

    2013-12-12

    Small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron®717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt.% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt.% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external) scattering, but withmore » no preferential size features. The films formed in 5 wt.% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Here, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.« less

  19. First observation of neutral current proton electron scattering at the square root of s = 300 GeV

    NASA Astrophysics Data System (ADS)

    Hasegawa, Takuya

    1993-02-01

    Neutral current proton electron scattering at center of mass energy 295 GeV was observed for the first time, using the newly built proton electron collider HERA (Hadron Elektron Ring Anlage) and the general purpose detector ZEUS. The distributions of Q(sup 2), Bjorken-x(x), and Bjorken-y(y) were compared with the expectation based on the standard electroweak theory and QCD. Regarding the investigation of high-Q(sup 2) region, an event of Q(sup 2) approximately 1000 GeV(exp 2) was observed for the first time. From the x-distribution of the events, a limit on the mass and the coupling of an exotic s-channel resonance of a quark-lepton system (leptoquark) was obtained. The mass limit is 72 GeV (97 GeV) at 95% confidence level for a scalar type leptoquark with a left-handed (right-handed) electromagnetic coupling to ordinary leptons. The leptoquark is assumed to be weak-isoscalar. To realize this experiment, a uranium scintillator sandwich type calorimeter was developed. Equal response to electrons and hadrons (e/h = 1), which is essential for the good energy resolution for hadrons, has been achieved. One of the main characteristics of this calorimeter is a possibility of calibration utilizing its own uranium radioactivity. The grain variation of each channel can be detected with an accuracy of plus or minus one percent.

  20. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  1. High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2

    NASA Astrophysics Data System (ADS)

    Diaz, Horacio Coy; Ma, Yujing; Chaghi, Redhouane; Batzill, Matthias

    2016-05-01

    Growth of transition metal dichalcogenide heterostructures by molecular beam epitaxy (MBE) promises synthesis of artificial van der Waals materials with controllable layer compositions and separations. Here, we show that MBE growth of 2H-MoTe2 monolayers on MoS2 substrates results in a high density of mirror-twins within the films. The grain boundaries are tellurium deficient, suggesting that Te-deficiency during growth causes their formation. Scanning tunneling microscopy and spectroscopy reveal that the grain boundaries arrange in a pseudo periodic "wagon wheel" pattern with only ˜2.6 nm repetition length. Defect states from these domain boundaries fill the band gap and thus give the monolayer an almost metallic property. The band gap states pin the Fermi-level in MoTe2 and thus determine the band-alignment in the MoTe2/MoS2 interface.

  2. X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

    1983-01-01

    A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

  3. High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Saunier, P.; Shih, H. D.

    1983-01-01

    The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K-band GaAs power field-effect transistors (FETs) fabricated on the MBE wafers. An output power of 710 mW with 4.5-dB gain and 17.7 percent power-added efficiency was achieved at 21 GHz with a 1.26-mm gate width pi-gate device. A similar device with a 0.56-mm gate width produced an output power of 320 mW with 5.0-dB gain and 26.6 percent power-added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FETs operated in the K-band frequency range.

  4. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  5. Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Weir, Nicholas; Yao, Ruizhe; Lee, Chi-Sen; Guo, Wei

    2016-10-01

    Previous work shows the benefits of using vicinal substrates but there is currently a gap in the experimental studies of the effects under different MBE growth conditions. To fully realize controllable growth while using a vicinal substrate, we systematically explore and discuss the mechanism behind the dependence of the optical characteristics of MBE grown InAs QD ensembles with different growth parameters on a vicinal substrate. In addition, the potential improvement in optical quality with a vicinal substrate over an on-axis is demonstrated and an investigation into applying a two-step growth procedure on a vicinal substrate is conducted. Photoluminescence of the grown QD ensembles shows that increasing V/III ratio increased wavelength and decreased FWHM. Decreasing substrate temperature increased wavelength and FWHM. Utilizing the two-step growth method increased both wavelength and FWHM with increased interruption time.

  6. Magnetic properties of gadolinium substituted Bi{sub 2}Te{sub 3} thin films

    SciTech Connect

    Li, S.; Harrison, S. E.; Huo, Y.; Harris, J. S.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Yuan, H. T.; Zhou, B.; Chen, Y.-L.; Hesjedal, T.

    2013-06-17

    Thin film GdBiTe{sub 3} has been proposed as a candidate material in which to observe the quantum anomalous Hall effect. As a thermal non-equilibrium deposition method, molecular beam epitaxy (MBE) has the ability to incorporate large amounts of Gd into Bi{sub 2}Te{sub 3} crystal structures. High-quality rhombohedral (Gd{sub x}Bi{sub 1-x}){sub 2}Te{sub 3} films with substitutional Gd concentrations of x {<=} 0.4 were grown by MBE. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact up to the highest Gd concentration. Magnetoresistance measurements show weak antilocalization, indicating strong spin orbit interaction. Magnetometry reveals that the films are paramagnetic with a magnetic moment of 6.93 {mu}{sub B} per Gd{sup 3+} ion.

  7. Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Ahtapodov, L.; Munshi, A. M.; Nilsen, J. S.; Reinertsen, J. F.; Dheeraj, D. L.; Fimland, B. O.; van Helvoort, A. T. J.; Weman, H.

    2016-11-01

    The performance of GaAs nanowire (NW) devices depends critically on the presence of crystallographic defects in the NWs such as twinning planes and stacking faults, and considerable effort has been devoted to understanding and preventing the occurrence of these. For self-catalysed GaAs NWs grown by molecular beam epitaxy (MBE) in particular, there are in addition other types of defects that may be just as important for NW-based optoelectronic devices. These are the point defects such as the As vacancy and the Ga antisite occurring due to the inherently Ga-rich conditions of the self-catalysed growth. Here we demonstrate experimentally the effects of these point defects on the optical properties of GaAs/AlGaAs core–shell NWs grown by self-catalysed MBE. The present results enable insight into the role of the point defects both on their own and in conjunction with crystallographic planar defects.

  8. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M. ); Gao, Yongli . Dept. of Physics and Astronomy)

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  9. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Gao, Yongli

    1991-12-31

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  10. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  11. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

    SciTech Connect

    Schubert, F.; Merkel, U.; Schmult, S.; Mikolajick, T.

    2014-02-28

    Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.

  12. InSb photodetectors with PIN and nBn designs

    NASA Astrophysics Data System (ADS)

    Evirgen, A.; Abautret, J.; Perez, J. P.; Aït-Kaci, H.; Christol, P.; Fleury, J.; Sik, H.; Nedelcu, A.; Cluzel, R.; Cordat, A.

    2013-12-01

    InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb (100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm-2 at -50mV and R0A product as high as 6x106 WΩcm2 at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.

  13. Photoluminescence of GaAs films grown by vacuum chemical epitaxy

    SciTech Connect

    Bernussi, A.A.; Barreto, C.L.; Carvalho, M.M.G.; Motisuke, P.

    1988-08-01

    GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750 /sup 0/C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.

  14. Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

    NASA Technical Reports Server (NTRS)

    Derry, P. L.; Chen, H. Z.; Morkoc, H.; Yariv, A.; Lau, K. Y.

    1988-01-01

    Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

  15. Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

    1991-01-01

    Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

  16. n{sup +}-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

    SciTech Connect

    Lugani, L.; Malinverni, M.; Giraud, E.; Carlin, J.-F.; Grandjean, N.; Tirelli, S.; Marti, D.; Bolognesi, C. R.

    2014-11-17

    We report on the low-temperature growth of heavily Si-doped (>10{sup 20 }cm{sup −3}) n{sup +}-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 × 10{sup −4} Ω·cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n{sup +}-GaN/2 dimensional electron gas contact resistivity of 0.11 Ω·mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices.

  17. EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

    NASA Astrophysics Data System (ADS)

    Bell, Gavin R.; Burrows, Christopher W.; Hase, Thomas P. A.; Ashwin, Mark J.; McMitchell, Sean R. C.; Sanchez, Ana M.; Aldous, James D.

    2014-10-01

    The cubic polymorph of the binary transition metal pnictide (TMP) MnSb, c-MnSb, has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap ≳1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In0.5Ga0.5As(111) substrates and analyzed using synchrotron radiation X-ray diffraction. We find polymorphic growth of MnSb on both substrates, where c-MnSb co-exists with the ordinary niccolite n-MnSb polymorph. The grain size of the c-MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very different epitaxial strain from the GaAs (3.1%) and In0.5Ga0.5As (0.31%) substrates.

  18. Mechanical properties of individual InAs nanowires studied by tensile tests

    SciTech Connect

    Li, X.; Wei, X. L. E-mail: qingchen@pku.edu.cn; Xu, T. T.; Ning, Z. Y.; Shu, J. P.; Chen, Q. E-mail: qingchen@pku.edu.cn; Wang, X. Y.; Pan, D.; Zhao, J. H.; Yang, T.

    2014-03-10

    Mechanical properties of individual InAs nanowires (NWs) synthesized by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) methods are studied by in-situ tensile tests in a scanning electron microscope and their fracture strength and Young's modulus are obtained. The two types of NWs both exhibit brittle fracture with a maximum elastic strain up to ∼10%. Their fracture strength distributes in a similar range of ∼2–5 GPa with a general trend of increasing with NW volume decrease, which is well described by Weibull statistic with a smaller Weibull modulus and a higher characteristic strength for MOCVD NWs. Young's modulus is determined to be 16–78 GPa with an average value of 45 GPa and no dependence on NW diameter for MOCVD NWs and 34–79 GPa with an average value of 58 GPa for MBE NWs.

  19. Mechanical properties of individual InAs nanowires studied by tensile tests

    NASA Astrophysics Data System (ADS)

    Li, X.; Wei, X. L.; Xu, T. T.; Ning, Z. Y.; Shu, J. P.; Wang, X. Y.; Pan, D.; Zhao, J. H.; Yang, T.; Chen, Q.

    2014-03-01

    Mechanical properties of individual InAs nanowires (NWs) synthesized by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) methods are studied by in-situ tensile tests in a scanning electron microscope and their fracture strength and Young's modulus are obtained. The two types of NWs both exhibit brittle fracture with a maximum elastic strain up to ˜10%. Their fracture strength distributes in a similar range of ˜2-5 GPa with a general trend of increasing with NW volume decrease, which is well described by Weibull statistic with a smaller Weibull modulus and a higher characteristic strength for MOCVD NWs. Young's modulus is determined to be 16-78 GPa with an average value of 45 GPa and no dependence on NW diameter for MOCVD NWs and 34-79 GPa with an average value of 58 GPa for MBE NWs.

  20. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    SciTech Connect

    Egorov, A. Yu. Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Berezovskaya, T. N.; Nevedomskiy, V. N.

    2015-10-15

    It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

  1. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

    DOE PAGES

    Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei; Basile, Leonardo; Lu, Ning; Azcatl, Angelica; Magno, Katrina; Wallace, Robert M.; Kim, Moon; Idrobo, Juan -Carlos; et al

    2016-01-06

    Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer of MoTe2.more » In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.« less

  2. Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

    SciTech Connect

    Wong, Man Hoi; Wu Feng; Hurni, Christophe A.; Choi, Soojeong; Speck, James S.; Mishra, Umesh K.

    2012-02-13

    InAlN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAlN were verified by high resolution x-ray diffraction {omega}-2{theta} scans and reciprocal space maps. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy of the InAlN revealed the absence of lateral composition modulation that was observed in the films grown by plasma-assisted MBE. InAlN/AlN/GaN high electron mobility transistors with smooth surfaces were fabricated with electron mobilities exceeding 1600 cm{sup 2}/Vs and sheet resistances below 244 {Omega}/sq.

  3. Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions

    SciTech Connect

    Xu Zhongjie; Xie Maohai; Zhang Lixia; He Hongtao; Wang Jiannong

    2011-11-01

    Growths of GaN on Si(111) - (7 x 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a low-temperature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the high-temperature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n{sup -}-Si substrate shows rectifying characteristics.

  4. Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

    SciTech Connect

    Dabrowski, J. Lippert, G.; Schroeder, T.; Lupina, G.

    2014-11-10

    Hexagonal boron nitride (h-BN) is an attractive substrate for graphene, as the interaction between these materials is weak enough for high carrier mobility to be retained in graphene but strong enough to allow for some epitaxial relationship. We deposited graphene on exfoliated h-BN by molecular beam epitaxy (MBE), we analyzed the atomistic details of the process by ab initio density functional theory (DFT), and we linked the DFT and MBE results by random walk theory. Graphene appears to nucleate around defects in virgin h-BN. The DFT analysis reveals that sticking of carbon to perfect h-BN is strongly reduced by desorption, so that pre-existing seeds are needed for the nucleation. The dominant nucleation seeds are C{sub N}C{sub B} and O{sub N}C{sub N} pairs and B{sub 2}O{sub 3} inclusions in the virgin substrate.

  5. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    SciTech Connect

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-08-25

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm{sup 2}/V s) and sheet charge density (>3x10{sup 13} cm{sup -2}), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to {approx}100 {omega}/{open_square} at room temperature. Fabricated 1.2 {mu}m gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of {approx}1.3 A/mm and a peak transconductance of {approx}260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.

  6. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

    SciTech Connect

    Shengurov, D. V.; Chalkov, V. Yu.; Denisov, S. A.; Shengurov, V. G.; Stepikhova, M. V.; Drozdov, M. N.; Krasilnik, Z. F.

    2013-03-15

    The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 Multiplication-Sign 10{sup -10} Torr. The oxygen and erbium concentrations in the Si layers grown at 450 Degree-Sign C is {approx}1 Multiplication-Sign 10{sup 19} and 10{sup 18} cm{sup -3}, respectively. The silicon epitaxial layers codoped with erbium and oxygen have high crystal quality and yield effective photoluminescence and electroluminescence signals with the dominant optically active Er-1 center forming upon postgrowth annealing at a temperature of 800 Degree-Sign C.

  7. Growth and fabrication of proximity-coupled topological quantum wire circuits from thin InAs films

    NASA Astrophysics Data System (ADS)

    Kan, Carolyn; Xue, Chi; Bai, Yang; Eckstein, James

    The realization of topological states in strongly spin orbit coupled semiconductors proximity-coupled to conventional superconductors requires delicate materials engineering. Key areas for improvement include the crystalline quality of the semiconductor itself, but a high-quality interface between the semiconductor and superconductor is essential. Recent results have demonstrated the necessity of forming an in situ interface to eliminate the ``soft gap'' observed in earlier experiments. While much work has focused on vertically grown nanowires, we take a lithographic approach to fabricating quantum wires out of MBE-grown thin films, which allow for increased flexibility and scalability of device structures. Notably, our films are grown entirely in situ in linked MBE systems, vastly improving interface transmission and cleanliness. Aspects of growth architecture aimed toward increasing the InAs mobility, such as substrate choice and layer structure, are also discussed.

  8. Rubidium beam flux dependence of film properties of Ba1 - xRbxBiO3 deposited by molecular-beam epitaxy using distilled ozone

    NASA Astrophysics Data System (ADS)

    Ogihara, M.; Toda, F.; Makita, T.; Abe, H.

    1993-10-01

    We have focused our attention on the dependence of Ba1-xRbxBiO3 (BRBO) film composition ratio and film properties on rubidium-beam-flux intensity. BRBO films were deposited on MgO(100) substrates by molecular-beam epitaxy (MBE) using distilled ozone. Systematic measurements showed that the rubidium content was nearly independent of rubidium-beam-flux intensity in a wide beam-flux range. Therefore, it can be concluded that some degree of self-control of rubidium stoichiometry is actually possible in BRBO film growth by MBE. This study also revealed that the BRBO film properties had strong dependences on rubidium-beam-flux intensity even in the range for self-control of rubudium stoichiometry. Our study also clarified that rubidium-beam flux affects the barium content in the BRBO film.

  9. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

    SciTech Connect

    Hutchins, T.; Nazari, M.; Eridisoorya, M.; Myers, T. M.; Holtz, M.

    2015-01-15

    A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.

  10. Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael E.; Elliott, S. Tom; Holland, Stephen E.; Nikzad, Shouleh

    2005-01-01

    A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

  11. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    SciTech Connect

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  12. GaN/AlN Multilayer Superlattices Synthesized by Pulsed Laser Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Rohatgi, Nishith; Sharma, Ajay K.; Kvit, Alex; Narayan, J.; Muth, J. F.; Kolbas, R. M.

    2000-03-01

    We have synthesized GaN/AlN multilayer superlattices on sapphire where GaN is a quantum well and AlN acts as a barrier for the carriers. The well thickness has been varied in several samples while keeping the barrier thickness constant. We have grown 15 such alternate layers in each sample. Pulsed laser-MBE has been used in this work wherein stoichiometric GaN and AlN targets were ablated by UV laser (λ=248 nm) in background vacuum 5X10-10 Torr. The layer-by-layer growth of the heterostructures in laser-MBE makes it ideal for fabricating ultra thin layers such as quantum wells. The evidence of quantum wells was shown by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). The microstructure, interfaces, well thickness and defects have been characterized by these techniques. The optical properties such as transmission, absorbance and photoluminescence have been studied.

  13. A method of producing high quality oxide and related films on surfaces

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

  14. Visualization of weak ferromagnetic domains in multiferroic hexagonal ferrite thin film

    NASA Astrophysics Data System (ADS)

    Wu, Weida; Wang, Wenbo; Moyer, Jarrett A.; Schiffer, Peter; Mundy, Julia A.; Muller, David A.; Schlom, Darrell G.

    Hexagonal h-LuFeO3 thin film has been reported to be a room-temperature multiferroic. Extensive studies on high quality MBE thin films revealed a magnetoelectric phase with weak ferromagnetism emerges below TN ~ 147 K. However, the direct observation of weak ferromagnetic domain structures is still lacking. Here we report cryogenic magnetic force microscopy (MFM) results on 200 nm thick h-LuFeO3 film grown by molecular-beam epitaxy (MBE) on (111)-oriented yttria-stablized cubic zirconia (YSZ) substrates. Labyrinth-like weak ferromagnetic domain structures were observed with a domain size ~ 1 μm and domain wall width ~ 0 . 4 μm . Field-dependent MFM data indicates the coercive field is ~ 2 . 66 T at 50 K and ~ 3 . 15 T at 6 K. This work is supported by DOE BES under Award # DE-SC0008147.

  15. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  16. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    PubMed Central

    Baiutti, Federico; Christiani, Georg

    2014-01-01

    Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  17. Programmatic Impact of SDRAM SEFI

    NASA Technical Reports Server (NTRS)

    Guertin, Steven M.; Allen, Gregory R.; Sheldon, Douglas J.

    2012-01-01

    The Elpida EDS5104(08)ABTA 512Mb SDRAM is examined for programmatic impact of SEE. Use cases for the devices including EDAC and mode register reload are examined. Results indicate some SEE mitigation methods require careful application to achieve system-level benefits, while some event types are essentially mitigated by the application use. In the studied devices MBE and SEFI are identified and investigated as mechanisms requiring special consideration.

  18. Advanced silicon on insulator technology

    NASA Technical Reports Server (NTRS)

    Godbey, D.; Hughes, H.; Kub, F.

    1991-01-01

    Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

  19. Diffusive electronic transport in superconductor-semiconductor-superconductor junctions of Al or Nb on δ-doped GaAs

    NASA Astrophysics Data System (ADS)

    Kutchinsky, J.; Taboryski, R. J.; Clausen, T.; Sørensen, C. B.; Lindelof, P. E.; Hansen, J. Bindslev; Jacobsen, C. Schelde; Skov, J. L.

    1996-02-01

    We report measurements on planar superconductor-semiconductor-superconductor (S-Sm-S) junctions consisting of a n++ modulation doped conduction layer in MBE grown GaAs with superconducting contacts of Al or Nb. At distances between the two superconducting banks below ≈3.5μm we observe a coupling between the two superconductors, due to multiple Andreev reflections at the S-Sm interfaces.

  20. Principles of models based engineering

    SciTech Connect

    Dolin, R.M.; Hefele, J.

    1996-11-01

    This report describes a Models Based Engineering (MBE) philosophy and implementation strategy that has been developed at Los Alamos National Laboratory`s Center for Advanced Engineering Technology. A major theme in this discussion is that models based engineering is an information management technology enabling the development of information driven engineering. Unlike other information management technologies, models based engineering encompasses the breadth of engineering information, from design intent through product definition to consumer application.

  1. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  2. Growing Gallium Arsenide On Silicon

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, Gouri

    1989-01-01

    Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

  3. GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

    NASA Technical Reports Server (NTRS)

    Eisele, H.; Haddad, G. I.

    1992-01-01

    Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.

  4. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  5. Vacancy complexes in Sb-doped SnO{sub 2}

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.

    2014-02-21

    MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

  6. Phototransistors Development and their Applications to Lidar

    NASA Technical Reports Server (NTRS)

    Abedin, M. N.; Refaat, Tamer F.; Ismail, Syed; Singh, Upendra N.

    2007-01-01

    Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively.

  7. Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

    SciTech Connect

    Heyn, Ch.; Sonnenberg, D.; Graf, A.; Kerbst, J.; Stemmann, A.; Hansen, W.

    2014-05-15

    Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.

  8. Infrared Photodiodes Made by Low Energy Ion Etching of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy

    NASA Astrophysics Data System (ADS)

    Yoo, Sung-Shik

    Ion etching was used to form junctions on the p-type (111)B Hg_{1-x}Cd_ {x}Te grown by Molecular Beam Epitaxy(MBE). When Hg_{1-x}Cd_{x}Te layers are etched by Ar ions at energies ranging between 300 and 450eV, the top Hg_{1 -x}Cd_{x}Te layer is converted to n-type. The converted region is electrically characterized as a defective n^+-region near the surface, and a low doped n^--region exist below the damaged region. The total thickness of the converted n-type layer was found to be considerable. These results suggest that the creation of the n-type layer is due to the filling of mercury vacancies by mercury atoms displaced by the Ar ion irradiation on the surface. For the performance of the resulting photodiodes on MBE grown (111)B Hg_{1-x}Cd _{x}Te using this technique, the dynamic resistances at 80K are one order of magnitude less than those of junctions made on Liquid Phase Epitaxially and Bulk grown Hg_{1 -x}Cd_{x}Te. The ion etching technique was compared with ion implantation technique by fabricating diodes on the same MBE grown (111)B Hg _{1-x}Cd_{x}Te layers. The result of the comparison illustrates that ion etching technique is as good as ion implantation technique for the fabrication of Hg_{1-x}Cd _{x}Te photodiodes. Also it is believed that the performance of the diodes is limited by a relatively large density of twin defects usually found in MBE grown (111)B Hg_{1-x}Cd _{x}Te.

  9. Astronomically-induced Mid-Brunhes Transition in the Southern and Deep Oceans

    NASA Astrophysics Data System (ADS)

    Yin, Qiuzhen

    2013-04-01

    The interglacials after 430 ka (ka: 1000 years) ago were characterized by warmer climates and higher atmospheric CO2 concentrations than the interglacials before, but the cause of this climatic transition (the so-called Mid-Brunhes Event, MBE) is unknown. Based on model simulations, my results show that, in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic Bottom Water formation and Southern Ocean ventilation. My results also show that strong Westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward visible systematic difference in the astronomical parameters between the interglacials before and after 430 ka ago. Rather than being a real "event", the apparent MBE (i.e. the difference in the interglacial intensity before and after 430 ka BP) appears in my results to come from the complex response of the climate system to the astronomical and insolation forcings prevailing before and after 430 ka BP. This does not mean that nothing could have happened between MIS-13 and MIS-11 which might have amplified such difference. Given the important roles of the Southern and Deep Oceans on the carbon cycle, these findings are a first step towards understanding the magnitude change of the interglacial CO2 concentration around 430 ka. Reference: Yin Q.Z., 2013. Insolation-induced Mid-Brunhes Transition in the Southern and Deep Oceans. Nature, DOI 10.1038/nature11790. Acknowledgement: This work is supported by the European Research Council

  10. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  11. Characterization of aging-induced microstructural changes in M250 maraging steel using magnetic parameters

    NASA Astrophysics Data System (ADS)

    Rajkumar, K. V.; Vaidyanathan, S.; Kumar, Anish; Jayakumar, T.; Raj, Baldev; Ray, K. K.

    2007-05-01

    The best combinations of mechanical properties (yield stress and fracture toughness) of M250 maraging steel is obtained through short-term thermal aging (3-10 h) at 755 K. This is attributed to the microstructure containing precipitation of intermetallic phases in austenite-free low-carbon martensite matrix. Over-aged microstructure, containing reverted austenite degrades the mechanical properties drastically. Hence, it necessitates identification of a suitable non-destructive evaluation (NDE) technique for detecting any reverted austenite unambiguously during aging. The influence of aging on microstructure, room temperature hardness and non-destructive magnetic parameters such as coercivity ( Hc), saturation magnetization ( Ms) and magnetic Barkhausen emission (MBE) RMS peak voltage is studied in order to derive correlations between these parameters in aged M250 maraging steel. Hardness was found to increase with precipitation of intermetallics during initial aging and decrease at longer durations due to austenite reversion. Among the different magnetic parameters studied, MBE RMS peak voltage was found to be very sensitive to austenite reversion (non-magnetic phase) as they decreased drastically up on initiation of austenite reversion. Hence, this parameter can be effectively utilized to detect and quantify the reverted austenite in maraging steel specimen. The present study clearly indicates that the combination of MBE RMS peak voltage and hardness can be used for unambiguous characterization of microstructural features of technological and practical importance (3-10 h of aging duration at 755 K) in M250 grade maraging steel.

  12. Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

    NASA Astrophysics Data System (ADS)

    Liu, H. J.; Jiao, L.; Xie, L.; Yang, F.; Chen, J. L.; Ho, W. K.; Gao, C. L.; Jia, J. F.; Cui, X. D.; Xie, M. H.

    2015-09-01

    Interest in two-dimensional (2D) transition-metal dichalcogenides (TMDs) has prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy (MBE). However, growths of monolayer (ML) and bilayer (BL) WSe2—an important member of the TMD family—by the MBE method remain uncharted, probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the DB defects is present. The STS measurements of ML and BL WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from ML to BL, but also a band-bending effect across the boundary (step) between ML and BL domains. This band-bending appears to be dictated by the edge states at steps of the BL islands. Finally, comparison is made between the STS-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in ML and BL WSe2 (and MoSe2) are thus estimated.

  13. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  14. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE PAGES

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  15. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  16. Formation and cultivation of medaka primordial germ cells.

    PubMed

    Li, Zhendong; Li, Mingyou; Hong, Ni; Yi, Meisheng; Hong, Yunhan

    2014-07-01

    Primordial germ cell (PGC) formation is pivotal for fertility. Mammalian PGCs are epigenetically induced without the need for maternal factors and can also be derived in culture from pluripotent stem cells. In egg-laying animals such as Drosophila and zebrafish, PGCs are specified by maternal germ plasm factors without the need for inducing factors. In these organisms, PGC formation and cultivation in vitro from indeterminate embryonic cells have not been possible. Here, we report PGC formation and cultivation in vitro from blastomeres dissociated from midblastula embryos (MBEs) of the fish medaka (Oryzias latipes). PGCs were identified by using germ-cell-specific green fluorescent protein (GFP) expression from a transgene under the control of the vasa promoter. Embryo perturbation was exploited to study PGC formation in vivo, and dissociated MBE cells were cultivated under various conditions to study PGC formation in vitro. Perturbation of somatic development did not prevent PGC formation in live embryos. Dissociated MBE blastomeres formed PGCs in the absence of normal somatic structures and of known inducing factors. Most importantly, under culture conditions conducive to stem cell derivation, some dissociated MBE blastomeres produced GFP-positive PGC-like cells. These GFP-positive cells contained genuine PGCs, as they expressed PGC markers and migrated into the embryonic gonad to generate germline chimeras. Our data thus provide evidence for PGC preformation in medaka and demonstrate, for the first time, that PGC formation and derivation can be obtained in culture from early embryos of medaka as a lower vertebrate model.

  17. Adaptive sparse grid expansions of the vibrational Hamiltonian.

    PubMed

    Strobusch, D; Scheurer, Ch

    2014-02-21

    The vibrational Hamiltonian involves two high dimensional operators, the kinetic energy operator (KEO), and the potential energy surface (PES). Both must be approximated for systems involving more than a few atoms. Adaptive approximation schemes are not only superior to truncated Taylor or many-body expansions (MBE), they also allow for error estimates, and thus operators of predefined precision. To this end, modified sparse grids (SG) are developed that can be combined with adaptive MBEs. This MBE/SG hybrid approach yields a unified, fully adaptive representation of the KEO and the PES. Refinement criteria, based on the vibrational self-consistent field (VSCF) and vibrational configuration interaction (VCI) methods, are presented. The combination of the adaptive MBE/SG approach and the VSCF plus VCI methods yields a black box like procedure to compute accurate vibrational spectra. This is demonstrated on a test set of molecules, comprising water, formaldehyde, methanimine, and ethylene. The test set is first employed to prove convergence for semi-empirical PM3-PESs and subsequently to compute accurate vibrational spectra from CCSD(T)-PESs that agree well with experimental values.

  18. Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

    NASA Technical Reports Server (NTRS)

    Leopold, Daniel J.

    2002-01-01

    The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

  19. The Universal Dynamics of Tumor Growth

    PubMed Central

    Brú, Antonio; Albertos, Sonia; Luis Subiza, José; García-Asenjo, José López; Brú, Isabel

    2003-01-01

    Scaling techniques were used to analyze the fractal nature of colonies of 15 cell lines growing in vitro as well as of 16 types of tumor developing in vivo. All cell colonies were found to exhibit exactly the same growth dynamics—which correspond to the molecular beam epitaxy (MBE) universality class. MBE dynamics are characterized by 1), a linear growth rate, 2), the constraint of cell proliferation to the colony/tumor border, and 3), surface diffusion of cells at the growing edge. These characteristics were experimentally verified in the studied colonies. That these should show MBE dynamics is in strong contrast with the currently established concept of tumor growth: the kinetics of this type of proliferation rules out exponential or Gompertzian growth. Rather, a clear linear growth regime is followed. The importance of new cell movements—cell diffusion at the tumor border—lies in the fact that tumor growth must be conceived as a competition for space between the tumor and the host, and not for nutrients or other factors. Strong experimental evidence is presented for 16 types of tumor, the growth of which cell surface diffusion may be the main mechanism responsible in vivo. These results explain most of the clinical and biological features of colonies and tumors, offer new theoretical frameworks, and challenge the wisdom of some current clinical strategies. PMID:14581197

  20. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.

    2015-09-01

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  1. Gas-source molecular beam epitaxy of SiGe virtual substrates: I. Growth kinetics and doping

    NASA Astrophysics Data System (ADS)

    Hartmann, J. M.; Gallas, B.; Ferguson, R.; Fernàndez, J.; Zhang, J.; Harris, J. J.

    2000-04-01

    We have studied the growth by gas-source molecular beam epitaxy (GS-MBE) of SiGe virtual substrates. We have first determined the relationship existing between the Ge concentration in SiGe thick films and the gas phase ratio of disilane and germane, and its behaviour versus growth temperature. We find that Si atoms are 4.6 times more likely to be incorporated than Ge atoms at 550 °C. This incorporation probability decreases as the growth temperature increases, following a thermally activated law with a 0.082-0.126 eV characteristic energy. The dependence of SiGe growth rate on substrate temperatures has a cross-over point at approximately 8% of Ge, above which the growth rate decreases significantly as the temperature increases . Otherwise, we show what p-type or n-type doping levels are typically achievable in SiGe virtual substrates, and the influence diluted diborane and arsine have on the growth kinetics of SiGe. Additionally, we demonstrate that the `pre-build-up/flash-off' technique originally proposed by Iyer et al for solid-source MBE (1981 J. Appl. Phys. 52 5608) yields abrupt arsenic doping profiles in GS-MBE.

  2. Structure of Ge(100) surfaces for high-efficiency photovoltaic applications

    SciTech Connect

    Olson, J.M.; McMahon, W.E.

    1998-09-01

    While much is known about the Ge(100) surface in a UHV/MBE environment, little has been published about this surface in an MOCVD environment. The main objective of this study is to determine the structure of the surface of Ge substrates in the typical MOCVD reactor immediately prior to and following the heteronucleation of GaAs and other lattice-matched III-V alloys, and to determine the conditions necessary for the growth of device-quality epilayers. In this paper the authors present the first STM images of the MOCVD-prepared Ge surfaces. Although many of the observed features are very similar to UHV- or MBE-prepared surfaces, there are distinct and important differences. For example, while the As-terminated surfaces for MBE-Ge and MOCVD-Ge are virtually identical, the AsH{sub 3}-treated surfaces in an MOCVD reactor are quite different. The terrace reconstruction is rotated by {pi}/2, and significant step bunching or faceting is also observed. Time-dependent RD kinetic studies also reveal, for the first time, several interesting features: the transition rate from an As-terminated (1 x 2) terrace reconstruction to a stable AsH{sub 3}-annealed surface is a function of the substrate temperature, substrate miscut from (100) and AsH{sub 3} partial pressure, and, for typical prenucleation conditions, is relatively slow. These results explain many of the empirically derived nucleation conditions that have been devised by numerous groups.

  3. Structural phase transitions in Au thin films on Si (1 1 0): An in situ temperature dependent transmission electron microscopy study

    NASA Astrophysics Data System (ADS)

    Bhatta, Umananda M.; Dash, J. K.; Rath, A.; Satyam, P. V.

    2009-10-01

    We present a review on the formation of gold silicide nanostructures using in situ temperature dependent transmission electron microscopy (TEM) measurements. Thin Au films of two thicknesses (2.0 nm and 5.0 nm) were deposited on Si (1 1 0) substrate under ultra-high vacuum (UHV) conditions in a molecular beam epitaxy (MBE) system. Also a 2.0 nm thick Au film was deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In situ TEM measurements (for planar samples) were made at various temperatures (from room temperature, RT to 950 °C). We show that, in the presence of native oxide (UHV-MBE) at the interface, high aspect ratio (≈15.0) aligned gold silicide nanorods were observed. For the films that were grown with UHV conditions, a small aspect ratio (˜1.38) nanogold silicide was observed. For 5.0 nm thick gold thin film, thicker and lesser aspect ratio silicides were observed. Selected area diffraction pattern taken at RT after the sample for the case of 5.0 nm Au on Si (1 1 0)-MBE was annealed at 475 °C show the signature of gold silicide formation.

  4. High efficiency cadmium and zinc telluride-based thin film solar cells

    SciTech Connect

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. . School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  5. Solar Activity Studies using Microwave Imaging Observations

    NASA Technical Reports Server (NTRS)

    Gopalswamy, N.

    2016-01-01

    We report on the status of solar cycle 24 based on polar prominence eruptions (PEs) and microwave brightness enhancement (MBE) information obtained by the Nobeyama radioheliograph. The north polar region of the Sun had near-zero field strength for more than three years (2012-2015) and ended only in September 2015 as indicated by the presence of polar PEs and the lack of MBE. The zero-polar-field condition in the south started only around 2013, but it ended by June 2014. Thus the asymmetry in the times of polarity reversal switched between cycle 23 and 24. The polar MBE is a good proxy for the polar magnetic field strength as indicated by the high degree of correlation between the two. The cross-correlation between the high- and low-latitude MBEs is significant for a lag of approximately 5.5 to 7.3 years, suggesting that the polar field of one cycle indicates the sunspot number of the next cycle in agreement with the Babcock-Leighton mechanism of solar cycles. The extended period of near-zero field in the north-polar region should result in a weak and delayed sunspot activity in the northern hemisphere in cycle 25.

  6. Comparison of electrical properties and deep traps in p-Al{sub x}Ga{sub 1-x}N grown by molecular beam epitaxy and metal organic chemical vapor deposition

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

    2009-10-01

    The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

  7. Heavy ion fusion accelerator research (HIFAR) year-end report, April 1, 1987-September 30, 1987

    SciTech Connect

    Not Available

    1987-12-01

    The basic objective of the Heavy Ion Fusion Accelerator Research (HIFAR) program is to access the suitabilty of heavy ion accelerators as iginiters for Inertial Confinement Fusion (ICF). A specific accerelator techonolgy, the induction linac, has been studied at the Lawerence Berkeley Laboratory and has reached the point at which its viability for ICF applications can be assessed over the next few years. The HIFAR program addresses the generation of high-power, high-brightness beams of heavy ions, the understanding of the scaling laws in this novel physics regime, and the vadidation of new accelerator strategies, to cut costs. The papers in this report that address these goals are: MBE-4 mechanical progress, alignment of MBE-4, a compact energy analyzer for MBE-4, Cs/sup +/ injector modeling with the EGUN code, an improved emittance scanning system for HIFAR, 2-MV injector, carbon arc source development, beam combining in ILSE, emittance growth due to transverse beam combining in ILSE - particle simulation results, achromatic beam combiner for ILSE, additional elements for beam merging, quadrupole magnet design for ILSE, and waveforms and longitudinal beam-parameters for ILSE.

  8. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography. Comparison Of Experiments And Simulation

    SciTech Connect

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  9. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  10. Adaptive sparse grid expansions of the vibrational Hamiltonian

    SciTech Connect

    Strobusch, D.; Scheurer, Ch.

    2014-02-21

    The vibrational Hamiltonian involves two high dimensional operators, the kinetic energy operator (KEO), and the potential energy surface (PES). Both must be approximated for systems involving more than a few atoms. Adaptive approximation schemes are not only superior to truncated Taylor or many-body expansions (MBE), they also allow for error estimates, and thus operators of predefined precision. To this end, modified sparse grids (SG) are developed that can be combined with adaptive MBEs. This MBE/SG hybrid approach yields a unified, fully adaptive representation of the KEO and the PES. Refinement criteria, based on the vibrational self-consistent field (VSCF) and vibrational configuration interaction (VCI) methods, are presented. The combination of the adaptive MBE/SG approach and the VSCF plus VCI methods yields a black box like procedure to compute accurate vibrational spectra. This is demonstrated on a test set of molecules, comprising water, formaldehyde, methanimine, and ethylene. The test set is first employed to prove convergence for semi-empirical PM3-PESs and subsequently to compute accurate vibrational spectra from CCSD(T)-PESs that agree well with experimental values.

  11. Minority business bidding for local government contracts: the complexity of availability.

    PubMed

    Bangs, Ralph L; Murrell, Audrey; Constance-Huggins, Monique

    2007-01-01

    While minority-business enterprises (MBEs) have gained some access to local government contracts during the last three decades, these firms continue to receive a small share of local government contract spending relative to the number of available firms. Researchers have suggested two general explanations for the low representation of MBEs in contract awards: (1) lack of qualifications and capacity among MBEs, and (2) public and private discrimination against MBEs in contracting processes. This study on prime contract opportunities in a Northern central city and county with a large minority population finds that low bid rates greatly contribute to the low MBE shares of prime contracts and that bidding is reduced by both local government processes and characteristics of the firms. Some implications of these findings are that local governments need to: (1) monitor MBE shares of prime contract bids by size of contract and use share of bids as one measure of program and organizational effectiveness; (2) identify MBEs that are qualified for prime contracts and encourage and help interested firms to submit competitive bids; and (3) ensure that local government policies and practices do not diminish access to information about prime contract opportunities for qualified and interested minority firms. Another implication is that bidders lists should not be a primary basis for determining MBE availability, since many qualified and interested MBEs do not bid because of perceived barriers in local government.

  12. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

    NASA Astrophysics Data System (ADS)

    Steele, J. A.; Horvat, J.; Lewis, R. A.; Henini, M.; Fan, D.; Mazur, Yu. I.; Dorogan, V. G.; Grant, P. C.; Yu, S.-Q.; Salamo, G. J.

    2015-12-01

    In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation ``hot spot'' at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure.

  13. Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

    SciTech Connect

    Xi, Xiaoxing

    2014-01-13

    In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.

  14. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

    SciTech Connect

    Dagnelund, D.; Huang, Y. Q.; Buyanova, I. A.; Chen, W. M.; Tu, C. W.; Yonezu, H.

    2015-01-07

    By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.

  15. 16 alpha-(/sup 77/Br)bromo-11 beta-methoxyestradiol-17 beta: a gamma-emitting estrogen imaging agent with high uptake and retention by target organs

    SciTech Connect

    Katzenellenbogen, J.A.; McElvany, K.D.; Senderoff, S.G.; Carlson, K.E.; Landvatter, S.W.; Welch, M.J.

    1982-05-01

    16 alpha(/sup 77/Br)Bromo-11 beta-methoxyestradiol-17 beta (MBE(/sup 77/Br)), a compound with high affinity for the estrogen receptor and with low nonspecific binding, has been prepared with an effective specific activity of 770--1450 Ci per mmole at the time of synthesis. In immature female rats, this compound is taken up selectively by the uterus and is retained for prolonged periods. This is presumably due to the binding of this compound to the estrogen receptor, as uterine uptake is blocked selectively by coadministration of an excess of unlabeled estradiol, and administration of a chase dose of unlabeled estradiol results in a rapid decrease in activity in the uterus. In double-label experiments with 16 alpha(/sup 125/I)estradiol and MBE(/sup 77/Br), the two compounds showed equally selective uterine uptake at 1 hr, but the bromine-labeled compound became increasingly more selective at 3 and 6 hr. MBE(/sup 77/Br) may prove to be a more favorable agent for imaging human breast tumors than our previously described compound, 16 alpha-(/sup 77/Br)bromoestradiol-17 beta.

  16. Final Report: A Novel Tandem Homojunction Solar Cell, July 1, 1995 - June 30, 1999

    SciTech Connect

    Parkinson, Bruce

    1999-06-30

    The eventual target material, ZnSnP{sub 2}, was difficult to grow with MBE because of the high phosphorus vapor pressure. We decided to begin by growing a similar material, ZnSnAs{sub 2}, that also has a band gap dependent on the growth temperature that is related to the metal sub lattice site disorder. We were successful at growing and characterizing this material with MBE. Single crystals of a variety of the chalcopyrite materials were also prepared and characterized. The single crystals were used for optical and electronic property comparisons with the MBE and MOMBE grown thin films. Films of ZnSnP{sub 2} were eventually grown using organophosphorus precursors in an MOMBE growth process. This was also described in a published paper. We also completed the most thorough solid state NMR characterization of 11-IV-V{sub 2} chalcopyrite semiconductors yet done. This paper will soon be submitted to ''Chemistry of Materials''. Although we did not succeed in preparing a photovoltaic device we did pioneer new growth methods for preparing epitaxial layers of these materials and were able to obtain acceptable electronic properties from the thin film materials. Five high quality publications and two PhD thesis were also a direct result of this research project.

  17. A spatially consistent seamless predictions of continental-scale hydrologic fluxes and states

    NASA Astrophysics Data System (ADS)

    Kumar, Rohini; Mai, Juliane; Rakovec, Oldrich; Zink, Matthias; Cuntz, Matthias; Thober, Stephan; Attinger, Sabine; Schroen, Martin; Schaefer, David; Samaniego, Luis

    2016-04-01

    One of the major challenges in the contemporary hydrology is to establish a continental-scale hydrologic model that can provide spatially consistent, seamless prediction of hydrologic fluxes and states to better characterise extreme events like floods and droughts. This requires, among other things, 1) a robust parameterization technique that allows the model to seamlessly operate across a range of spatial resolutions and 2) an efficient parameter estimation technique to derive a representative set of spatially consistent model parameters that avoid inconsistencies in simulated hydrologic fields (e.g., soil moisture). In this study, we demostrate the applicability of a mesoscale hydrologic model parameterized using a multiscale regionalization technique to derive daily gridded fields of hydrologic fluxes/states over the Pan-EU domain since 1950. A multi-basin parameter estimation (MBE) strategy that utilizes observed streamflows from a set of hydrologically diverse basins is introduced to infer a representative set of regional calibration parameters which is applicable over the entire domain. We tested three sampling schemes to select a set of calibration basins incremented sequentially from 2 to 20 basins, based on the 1) random selection procedure, 2) gradient along the hydro-climatic regimes, and 3) diversity in hydro-climatic and basin physiographical properties (e.g., terrain, soil, land cover properties). Results of the MBE approach are contrasted against the benchmark at-site calibration strategy across 400 EU basins varying from approximately 100 to 500,000 km2. At-site calibrated parameters performed best for site-specific streamflow predictions, but their transferability to other sites resulted in poor performance. Moreover, the at-site calibration strategy generated a patchy, spatially inconsistent distribution of parameter fields that further induced large discontinuities in simulated hydrologic fields of soil moisture among other sates/fluxes. These

  18. Estimation of global solar radiation using an artificial neural network based on an interpolation technique in southeast China

    NASA Astrophysics Data System (ADS)

    Zou, Ling; Wang, Lunche; Lin, Aiwen; Zhu, Hongji; Peng, Yuling; Zhao, Zhenzhen

    2016-08-01

    Solar radiation plays important roles in energy application, vegetation growth and climate change. Empirical relations and machine-learning methods have been widely used to estimate global solar radiation (GSR) in recent years. An artificial neural network (ANN) based on spatial interpolation is developed to estimate GSR in southeast China. The improved Bristow-Campbell (IBC) model and the improved Ångström-Prescott (IA-P) model are compared with the ANN model to explore the best model in solar radiation modeling. Daily meteorological parameters, such as sunshine duration hours, mean temperature, maximum temperature, minimum temperature, relative humidity, precipitation, air pressure, water vapor pressure, and wind speed, along with station-measured GSR and a daily surface GSR dataset over China obtained from the Data Assimilation and Modeling Center for Tibetan Multi-spheres (DAM), are used to predict GSR and to validate the models in this work. The ANN model with the network of 9-17-1 provides better accuracy than the two improved empirical models in GSR estimation. The root-mean-square error (RMSE), mean bias error (MBE), and determination coefficient (R2) are 2.65 MJ m-2, -0.94 MJ m-2, and 0.68 in the IA-P model; 2.19 MJ m-2, 1.11 MJ m-2, and 0.83 in the IBC model; 1.34 MJ m-2, -0.11 MJ m-2, and 0.91 in the ANN model, respectively. The regional monthly mean GSR in the measured dataset, DAM dataset, and ANN model is analyzed. The RMSE (RMSE %) is 1.07 MJ m-2 (8.91%) and the MBE (MBE %) is -0.62 MJ m-2 (-5.21%) between the measured and ANN-estimated GSR. The statistical errors of RMSE (RMSE %) are 0.91 MJ m-2 (7.28%) and those of MBE (MBE %) are -0.15 MJ m-2 (-1.20%) between DAM and ANN-modeled GSR. The correlation coefficients and R2 are larger than 0.95. The regional mean GSR is 12.58 MJ m-2. The lowest GSR is observed in the northwest area, and it increases from northwest to southeast. The annual mean GSR decreases by 0.02 MJ m-2 decade-1 over the entire

  19. Electrical Characterization of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy Under Low Magnetic Field Strength

    NASA Astrophysics Data System (ADS)

    Wijewarnasuriya, P. S.

    HgCdTe alloy is currently the most important semiconductor material for IR detection technology. Different growth techniques are used to produce HgCdTe, but achieving a high-quality material is still a major objective in the field. Among the growth techniques for HgCdTe, molecular beam epitaxy (MBE) is one of the most promising, mainly because of its versatility. Furthermore, the growth by MBE is carried out at a low temperature which limits interdiffusion processes. The focus of this research is the understanding of the electrical properties of HgCdTe layers grown by MBE technique. Using a model based on a single discrete acceptor level near the valence band and a corresponding fully ionized donor level, a good fit to the observed Hall data on p-type epilayers was obtained. In some samples, another acceptor level was needed. Also, analysis of R _{h} data and low temperature mobilities indicated that the p-type MBE growth layers were highly compensated. This was also confirmed by mercury saturated annealing experiments. Annealing of (111)B epilayers with Hg pressure leads us to believe that Hg vacancies are responsible for the p-type character. The findings reveal that the electrical properties differ drastically between different growth orientations, with (111)B having the highest residual doping levels for a particular Cd composition. It is concluded that MBE growth for HgCdTe is essentially a Te rich growth and our understanding is that this extra Te is responsible for the n-type character in the epilayers. A comparison between HgCdTe twinned layers and twin-free layers has shown that electrically active acceptors and high hole mobilities are associated with the presence of twins. Incorporation of several foreign elements also tried and all were found to substitute the metal sites during growth. With magnetic field studies on R_ {h}, resistivity and conductivity tensor analysis, the band structure of the HgCdTe alloy is also investigated. Junction depth and the

  20. International Space Station (ISS) Gas Logistics Planning in the Post Shuttle Era

    NASA Technical Reports Server (NTRS)

    Leonard, Daniel J.; Cook, Anthony J.; Lehman, Daniel A.

    2011-01-01

    Over its life the International Space Station (ISS) has received gas (nitrogen, oxygen, and air) from various sources. Nitrogen and oxygen are used in the cabin to maintain total pressure and oxygen partial pressures within the cabin. Plumbed nitrogen is also required to support on-board experiments and medical equipment. Additionally, plumbed oxygen is required to support medical equipment as well as emergency masks and most importantly EVA support. Gas are supplied to ISS with various methods and vehicles. Vehicles like the Progress and ATV deliver nitrogen (both as a pure gas and as air) and oxygen via direct releases into the cabin. An additional source of nitrogen and oxygen is via tanks on the ISS Airlock. The Airlock nitrogen and oxygen tanks can deliver to various users via pressurized systems that run throughout the ISS except for the Russian segment. Metabolic oxygen is mainly supplied via cabin release from the Elektron and Oxygen Generator Assembly (OGA), which are water electrolyzers. As a backup system, oxygen candles (Solid Fuel Oxygen Generators-SFOGs) supply oxygen to the cabin as well. In the past, a major source of nitrogen and oxygen has come from the Shuttle via both direct delivery to the cabin as well as to recharge the ISS Airlock tanks. To replace the Shuttle capability to recharge the ISS Airlock tanks, a new system was developed called Nitrogen/Oxygen Recharge System (NORS). NIORS consists of high pressure (7000 psi) tanks which recharge the ISS Airlock tanks via a blowdown fill for both nitrogen and oxygen. NORS tanks can be brought up on most logistics vehicles such as the HTV, COTS, and ATV. A proper balance must be maintained to insure sufficient gas resources are available on-orbit so that all users have the required gases via the proper delivery method (cabin and/or plumbed).

  1. Film breakdown and nano-porous Mg(OH)2 formation from corrosion of magnesium alloys in salt solutions

    DOE PAGES

    Brady, M. P.; Rother, G.; L. M. Anovitz; Littrell, K. C.; Unocic, K. A.; Elsentriecy, H. H.; Song, G. -L.; Thomson, J. K.; Gallego, N. C.; Davis, B.

    2015-01-21

    In this paper, small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron 717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as-received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external)more » scattering, but with no preferential size features. The films formed in 5 wt% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Finally, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.« less

  2. The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

    SciTech Connect

    Yang, Meiyin; Allard, Lawrence F.; Ji, Nian; Zhang, Xiaowei; Yu, Guang-Hua; Wang, Jian -Ping

    2013-12-12

    Small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron®717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt.% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt.% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external) scattering, but with no preferential size features. The films formed in 5 wt.% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Here, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.

  3. Film breakdown and nano-porous Mg(OH)2 formation from corrosion of magnesium alloys in salt solutions

    SciTech Connect

    Brady, M. P.; Rother, G.; L. M. Anovitz; Littrell, K. C.; Unocic, K. A.; Elsentriecy, H. H.; Song, G. -L.; Thomson, J. K.; Gallego, N. C.; Davis, B.

    2015-01-21

    In this paper, small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron 717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as-received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external) scattering, but with no preferential size features. The films formed in 5 wt% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Finally, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.

  4. Effect of the Graded-Gap Layer Composition on the Formation of n + -n - -p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1- x Te Layers

    NASA Astrophysics Data System (ADS)

    Talipov, N. Kh.; Voitsekhovskii, А. V.; Grigor'ev, D. V.

    2014-07-01

    Processes of formation of n + -n--p-structures in boron-implanted heteroepitaxial (HEL) CdxHg1-xTe (CMT) layers of p-type grown by molecular beam epitaxy (HEL CMT MBE) with different compositions of the upper graded-gap layer are studied. It is shown that the surface composition (xs) of HEL CMT MBE significantly affects both the electrical parameters of the implanted layer and the spatial distribution of radiation defects of donor type. For HEL CMT MBE with the small surface composition xs = 0.22-0.33, it is found that the layer electron concentration (Ns) is decreased after saturation with accumulation of radiation defects, as the dose of B+ ions is increased in the range of D = 1ṡ1011-3ṡ1015 сm-2. An increase of the surface composition up to xs = 0.49-0.56 results in a significant decrease in Ns and a disappearance of the saturation of concentration in the whole dose range. The value of Ns monotonically increases with the energy (E) of boron ions and composition xs. It is found that for B+-ion energies E = 20-100 keV, the depth of the surface n + -layer increases with increasing energy and exceeds the total projected path of boron ions. However, in the energy range E = 100-150 keV, the depth of n+-layer stops increasing with the increase of the surface composition. The depth (dn) of a lightly doped n--layer monotonically decreases with increasing energy of boron ions in the entire range of E = 20-150 keV. With increasing dose (D) of B+ ions in the interval D = 1ṡ1014-1ṡ1015сm-2, deep n--layers with dn = 4-5 μm are formed only in the HEL CMT MBE with xs = 0.22-0.33. For the samples with xs = 0.49-0.56, the depth changes in the interval dn = 1.5-2.5 μm. At D ≤ 3ṡ1013сm-2, n + -n--p-structure is not formed for all surface compositions, if implantation is performed at room temperature. However, implantation at T = 130°C leads to the formation of a deep n--layer. Planar photodiodes with the n-p-junction area of A = 35×35 μm2 made on the basis of

  5. Artifacts for Calibration of Submicron Width Measurements

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank; Grunthaner, Paula; Bryson, Charles, III

    2003-01-01

    Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by

  6. Many-Body Basis Set Superposition Effect.

    PubMed

    Ouyang, John F; Bettens, Ryan P A

    2015-11-10

    The basis set superposition effect (BSSE) arises in electronic structure calculations of molecular clusters when questions relating to interactions between monomers within the larger cluster are asked. The binding energy, or total energy, of the cluster may be broken down into many smaller subcluster calculations and the energies of these subsystems linearly combined to, hopefully, produce the desired quantity of interest. Unfortunately, BSSE can plague these smaller fragment calculations. In this work, we carefully examine the major sources of error associated with reproducing the binding energy and total energy of a molecular cluster. In order to do so, we decompose these energies in terms of a many-body expansion (MBE), where a "body" here refers to the monomers that make up the cluster. In our analysis, we found it necessary to introduce something we designate here as a many-ghost many-body expansion (MGMBE). The work presented here produces some surprising results, but perhaps the most significant of all is that BSSE effects up to the order of truncation in a MBE of the total energy cancel exactly. In the case of the binding energy, the only BSSE correction terms remaining arise from the removal of the one-body monomer total energies. Nevertheless, our earlier work indicated that BSSE effects continued to remain in the total energy of the cluster up to very high truncation order in the MBE. We show in this work that the vast majority of these high-order many-body effects arise from BSSE associated with the one-body monomer total energies. Also, we found that, remarkably, the complete basis set limit values for the three-body and four-body interactions differed very little from that at the MP2/aug-cc-pVDZ level for the respective subclusters embedded within a larger cluster. PMID:26574311

  7. Core-shell tin oxide, indium oxide, and indium tin oxide nanoparticles on silicon with tunable dispersion: electrochemical and structural characteristics as a hybrid Li-ion battery anode.

    PubMed

    Osiak, Michal J; Armstrong, Eileen; Kennedy, Tadhg; Torres, Clivia M Sotomayor; Ryan, Kevin M; O'Dwyer, Colm

    2013-08-28

    Tin oxide (SnO2) is considered a very promising material as a high capacity Li-ion battery anode. Its adoption depends on a solid understanding of factors that affect electrochemical behavior and performance such as size and composition. We demonstrate here, that defined dispersions and structures can improve our understanding of Li-ion battery anode material architecture on alloying and co-intercalation processes of Lithium with Sn from SnO2 on Si. Two different types of well-defined hierarchical Sn@SnO2 core-shell nanoparticle (NP) dispersions were prepared by molecular beam epitaxy (MBE) on silicon, composed of either amorphous or polycrystalline SnO2 shells. In2O3 and Sn doped In2O3 (ITO) NP dispersions are also demonstrated from MBE NP growth. Lithium alloying with the reduced form of the NPs and co-insertion into the silicon substrate showed reversible charge storage. Through correlation of electrochemical and structural characteristics of the anodes, we detail the link between the composition, areal and volumetric densities, and the effect of electrochemical alloying of Lithium with Sn@SnO2 and related NPs on their structure and, importantly, their dispersion on the electrode. The dispersion also dictates the degree of co-insertion into the Si current collector, which can act as a buffer. The compositional and structural engineering of SnO2 and related materials using highly defined MBE growth as model system allows a detailed examination of the influence of material dispersion or nanoarchitecture on the electrochemical performance of active electrodes and materials.

  8. Misconduct, Marginality and Editorial Practices in Management, Business and Economics Journals

    PubMed Central

    2016-01-01

    Objectives The paper presents data on the two problems of misconduct and marginality in management, business and economics (MBE) journals and their practices to combat these problems. Design Data was collected in three phases. First, all publicly retracted papers in MBE journals were identified through keywords searches in 7 major databases (n = 1329 journals). Second, a focused survey was distributed to editors involved in such retractions (n = 64; response rate = 28%). Finally, a survey was administered to all active journals in the seven databases to collect data on editors’ perceptions and practices related to the two problems (n = 937, response rate = 31.8%). Frequency analyses, cross tabulations, and qualitative analyses of open answers were used to examine the data. Results 184 retracted papers in MBE journals were identified in 2005–2015 (no retraction was found before 2005). From 2005–2007 to 2012–2015, the number of retractions increased by a factor ten with an all-time high in 2015. The survey to journals with reported retractions illustrates how already a few cases of suspected misconduct put a strain on the editorial workload. The survey to all active journals revealed that 42% of the respondents had started to use software to screen all submitted papers, and that a majority recognized the problem of marginality, as indicated by salami-style submissions. According to some editors, reviewers easily spot such submissions whereas others argued that authors may submit thinly sliced papers in parallel to several journals, which means that this practice is only discovered post-publication. The survey question on ways to support creative contributions stimulated a rich response of ideas regarding editorial vision, engaged boards and developmental approaches. The study uses data from three specialized fields, but its findings may be highly relevant to many journals in the social sciences. PMID:27454761

  9. Multidisciplinary model-based-engineering for laser weapon systems: recent progress

    NASA Astrophysics Data System (ADS)

    Coy, Steve; Panthaki, Malcolm

    2013-09-01

    We are working to develop a comprehensive, integrated software framework and toolset to support model-based engineering (MBE) of laser weapons systems. MBE has been identified by the Office of the Director, Defense Science and Engineering as one of four potentially "game-changing" technologies that could bring about revolutionary advances across the entire DoD research and development and procurement cycle. To be effective, however, MBE requires robust underlying modeling and simulation technologies capable of modeling all the pertinent systems, subsystems, components, effects, and interactions at any level of fidelity that may be required in order to support crucial design decisions at any point in the system development lifecycle. Very often the greatest technical challenges are posed by systems involving interactions that cut across two or more distinct scientific or engineering domains; even in cases where there are excellent tools available for modeling each individual domain, generally none of these domain-specific tools can be used to model the cross-domain interactions. In the case of laser weapons systems R&D these tools need to be able to support modeling of systems involving combined interactions among structures, thermal, and optical effects, including both ray optics and wave optics, controls, atmospheric effects, target interaction, computational fluid dynamics, and spatiotemporal interactions between lasing light and the laser gain medium. To address this problem we are working to extend Comet™, to add the addition modeling and simulation capabilities required for this particular application area. In this paper we will describe our progress to date.

  10. Ka-Band GaAs FET Monolithic Power Amplifier Development

    NASA Technical Reports Server (NTRS)

    Saunier, Paul; Tserng, Hua Quen

    1997-01-01

    Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

  11. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang

    2015-07-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III-V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III-V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III-V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III-V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components.

  12. Thermal behavior of MOCVD-grown Cu-clusters on ZnO(1010).

    PubMed

    Kroll, Martin; Löber, Thomas; Schott, Vadim; Wöll, Christof; Köhler, Ulrich

    2012-02-01

    Scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS, AES) were used to study MOCVD of Cu-clusters on the mixed terminated ZnO(1010) surface in comparison to MBE Cu-deposition. Both deposition methods result in the same Cu cluster morphology. After annealing to 670 K the amount of Cu visible above the oxide surface is found to decrease substantially, indicating a substantial diffusion of Cu atoms inside the ZnO-bulk. The spectroscopic data do not show any evidence for changes in the Cu oxidation state during thermal treatment up to 770 K.

  13. Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

    NASA Astrophysics Data System (ADS)

    Lyapunov, D. V.; Pishchagin, A. A.; Grigoryev, D. V.; Korotaev, A. G.; Voitsekhovskii, A. V.; Kokhanenko, A. P.; Iznin, I. I.; Savytskyy, H. V.; Bonchik, A. U.; Dvoretskii, S. A.; Mikhailov, N. N.

    2016-08-01

    In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films.

  14. Use of high index substrates to enable dislocation filtering in large mismatch systems

    SciTech Connect

    Reno, J.L.; Biefeld, R.M.; Kurtz, S.R.; Baucom, K.C.

    1997-01-01

    We report results in three areas of research relevant to the fabrication of a wide range of optoelectronic devices: The development of a new x-ray diffraction technique that can be used to rapidly determine the optimal period of a strained layer superlattice to maximize the dislocation filtering; The optimal MBE growth parameters for the growth of CdTe on GaAs(211); The determination of the relative efficiency of dislocation filtering in the (211) and (100) orientations; and The surface quality of InSb grown by MOCVD on InSb substrates is affected by the misorientation of the substrate.

  15. Long wavelength semiconductor lasers development for infrared heterodyne applications

    NASA Technical Reports Server (NTRS)

    Feit, Zeev; Kostyk, Douglas

    1989-01-01

    PbSnTe single crystals were grown in a new 3 zone furnace. Molecular beam epitaxy (MBE) growth parameters have been established, including beam flux vs. temperature, and growth rates and dopant vs. PbTe flux ratios for the various effusion sources involved. Lattice matching studies were conducted and doping studies were completed. Broad area Pb(1-x)Sn(x)Te double heterostructure lasers were fabricated with active layer compositions up to x equals 0.04 at percent Sn in the active layers. Electrical and optical test data are presented.

  16. Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Liu, John K.; Radhakrishnan, Gouri; Katz, Joseph; Sakai, Shiro

    1988-01-01

    Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

  17. Molecular-beam epitaxy of CrSi2 on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Grunthaner, P. J.; Lin, T. L.; Chang, K. T.; Mazur, J. H.

    1988-01-01

    The growth of CrSi2 on Si(111) in a commercial MBE system with a base pressure in the low 10 to the -11th torr range is reported. CrSi2 layers grown on Si(111) exhibit a strong tendency to form islands. Two particular epitaxial relationships are identified. Thick (210 nm) layers have been grown by four different techniques, with best results obtained by codepositing Cr and Si at elevated temperature. The grain size is observed to increase with substrate temperature, reaching 1-2 microns in a layer deposited at 825 C.

  18. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  19. Resonant Transport in Nb/gaas/algaas/gaas Microstructures

    NASA Astrophysics Data System (ADS)

    Giazotto, F.; Pingue, P.; Beltram, F.; Lazzarino, M.; Orani, D.; Rubini, S.; Franciosi, A.

    2003-03-01

    Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs in presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in all-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

  20. p-type ZnO and ZnMnO by oxidation of Zn(Mn)Te films

    NASA Astrophysics Data System (ADS)

    Przedziecka, E.; Kamiska, E.; Dynowska, E.; Dobrowolski, W.; Jakiea, R.; Kopotowski, .; Sawicki, M.; Kiecana, M.; Kossut, J.

    2006-03-01

    ZnO and ZnMnO doped with N and/or As layers were fabricated by thermal oxidation of ZnTe and ZnMnTe grown by MBE on different substrates. The Hall measurements demonstrated p -type conductivity with the hole concentration of 5 . 1019 cm-3 for ZnO:As and ZnO:As:N on GaAs substrates and 6 . 1017 cm-3 for ZnTe:N on ZnTe substrates. Optical study showed meaningful differences between samples with different acceptor, grown on different substrates. Magnetoptical experiment demonstration Zeeman splitting in ZnMnO samples.

  1. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  2. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael; Sears, Jasmine; Zandbergen, Sander; Nader, Nima; Keiffer, Patrick; Hendrickson, Joshua; Arnoult, Alexandre; Khitrova, Galina

    2015-09-01

    We describe molecular beam epitaxy (MBE) growth conditions for self-assembled indium nanostructures, or islands, which allow for the tuning of the density and size of the indium nanostructures. How the plasmonic resonance of indium nanostructures is affected by the island density, size, distribution in sizes, and indium purity of the nanostructures is explored. These self-assembled nanostructures provide a platform for integration of resonant and non-resonant plasmonic structures within a few nm of quantum wells (QWs) or quantum dots (QDs) in a single process. A 4× increase in peak photoluminescence intensity is demonstrated for near-surface QDs resonantly coupled to indium nanostructures.

  3. Pressure-dependent studies of the DX centre in Si- and Sn-doped n +GaAs

    NASA Astrophysics Data System (ADS)

    Portal, J. C.; Maude, D. K.; Foster, T. J.; Eaves, L.; Dmowski, L.; Nathan, M.; Heiblum, M.; Harris, J. J.; Beall, R. B.; Simmonds, P. E.

    Shubnikov-de Haas and persistent photoconductivity measurements are used to study the effect of hydrostatic pressure on the free electron concentration, mobility, and the occupancy of the DX centre in MBE grown n +GaAs heavily doped with either Si or Sn. The results show that the DX centre produces a resonant donor level between the Γ- and L- conduction band minima at a concentration comparable with the doping level. The position and occupancy of the DX centre are calculated using Fermi-Dirac statistics. For the Si-doped samples comparison with local vibrational mode measurements indicate that the DX level can be identified with Si Ga.

  4. Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)

    NASA Technical Reports Server (NTRS)

    Henderson, T. S.; Masselink, W. T.; Kopp, W.; Morkoc, H.

    1986-01-01

    The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.

  5. Bismuth-induced Raman modes in GaP1- x Bi x

    NASA Astrophysics Data System (ADS)

    Christian, Theresa M.; Fluegel, Brian; Beaton, Daniel A.; Alberi, Kirstin; Mascarenhas, Angelo

    2016-10-01

    Dilute bismide semiconductor alloys are a promising material platform for optoelectronic devices due to drastic impacts of bismuth on the electronic structure of the alloy. At the same time, the details of bismuth incorporation in the lattice are not fully understood. In this work, we conduct Raman scattering spectroscopy on GaP1- x Bi x epilayers grown by molecular beam epitaxy (MBE) and identify several bismuth-related Raman features including gap vibration modes at 296, 303, and 314 cm-1. This study paves the way for more detailed analysis of the local symmetry at bismuth incorporation sites in the dilute bismide alloy regime.

  6. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE PAGES

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  7. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    SciTech Connect

    Nemcsics, A.

    2005-11-15

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

  8. Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Krockenberger, Yoshiharu; Yamamoto, Hideki

    2014-03-01

    We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp3-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N2+ and Ar+ ions is a key to selectively discriminate non-sp3 BN phases. At low acceleration voltage values, the sp2-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

  9. Far-infrared magnetospectroscopy on epitaxial zero-gap and wide-gap semiconductor layer systems

    NASA Astrophysics Data System (ADS)

    Kempf, P.; von Ortenberg, M.; Bicknell-Tassius, R.; Waag, A.

    1992-02-01

    Far-infrared magnetotransmission measurements have been performed on MBE-grown HgTe and CdTe epilayers. The results on the HgTe samples can be understood by the standard Pidgeon-Brown model for bulk HgTe. For the CdTe layers, transitions were only observed under illumination by visible light. The spectra are dominated by the 1 s→2 p transition of the shallow hydrogen-like impurity. These transitions are persistent with a life time of the order of magnitude of one second.

  10. Microtechnology

    SciTech Connect

    Mariella, R.P.

    1997-02-01

    Research reported in the thrust area of microtechnology includes: advanced plasma etch processes for high-aspect-ratio, submicron-feature-size applications; integration of PCR amplification and capillary electrophoresis in a DNA analysis device; microactuators for optical interferometry; thin silicon windows; eutectic bonding and fusion bonding; solid-source MBE-grown GaAs/AlGaAs ridge-waveguide semiconductor optical amplifiers; large area lithography; phase-shift lithography; thermally robust optical semiconductor devices using AlGaInAs grown by molecular beam epitaxy; and porous silicon formation and characterization.

  11. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    SciTech Connect

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  12. Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

    NASA Astrophysics Data System (ADS)

    Gotschke, T.; Schumann, T.; Limbach, F.; Stoica, T.; Calarco, R.

    2011-03-01

    Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

  13. Epitaxial growth of Bi{sub 2}Se{sub 3} topological insulator thin films on Si (111)

    SciTech Connect

    He Liang; Xiu Faxian; Huang Guan; Kou Xufeng; Lang Murong; Wang, Kang L.; Wang Yong; Fedorov, Alexei V.; Beyermann, Ward P.; Zou Jin

    2011-05-15

    In this paper, we report the epitaxial growth of Bi{sub 2}Se{sub 3} thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with the temperature- and thickness-dependent magneto-transport measurements, suggest the presence of a shallow impurity band. Below a critical temperature of {approx}100K, the surface states of a 7 nm thick film contribute up to 50% of the total conduction.

  14. Analysis of Etched CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  15. High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

    NASA Technical Reports Server (NTRS)

    Nikzad, Shouleh; Hoenk, M. E.; Carver, A. G.; Jones, T. J.; Greer, F.; Hamden, E.; Goodsall, T.

    2013-01-01

    In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

  16. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si(001) substrates

    SciTech Connect

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Dhamdhere, Ajit; Smith, David J.; Demkov, Alexander A.; Ekerdt, John G.

    2013-01-15

    Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiO{sub x} layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 Degree-Sign C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si-O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 Degree-Sign C for 30 min in moderate to high vacuum (10{sup -6}-10{sup -9} Torr) removed the carbon species. Higher annealing temperatures (>275 Degree-Sign C) gave rise to a small increase in Si-O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30 Degree-Sign {+-} 0.06 Degree-Sign for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiO{sub x} layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.

  17. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  18. INAS hole-immobilized doping superlattice long-wave-infrared detector

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph (Inventor)

    1992-01-01

    An approach to long-wave-infrared (LWIR) technology is discussed. The approach is based on molecular beam epitaxy (MBE) growth of hole immobilized doping superlattices in narrow band gap 3-5 semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures suitable for focal plane arrays. An LWIR detector that has high detectivity performance to wavelengths of about 16 microns at operating temperatures of 65K, where long-duration space refrigeration is plausible, is presented.

  19. Monolithically integrated planar front-end photoreceivers with 0.25-micron gate pseudomorphic In(0.60)Ga(0.40)As/In(0.52)Al(0.48)As/InP modulation-doped field-effect transistors

    NASA Astrophysics Data System (ADS)

    Lai, R.; Bhattacharya, P. K.; Pavlidis, D.; Brock, T.

    1991-02-01

    Monolithically InP-based pin-MODFET front-end photoreceivers realized by MBE regrowth have been characterized. The FWHM of the temporal response to photoexcitation for the full circuit was 60 psec, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 ohms is 15.0 GHz. The performance of the pin-MODFET photoreceiver circuit is comparable to the best hybrid circuits with InP-based devices.

  20. Photoluminescence of strained-layer superlattices

    NASA Astrophysics Data System (ADS)

    Kato, H.; Nakayama, M.; Chika, S.; Sano, N.

    1984-11-01

    The strained-layer superlattices (SLS's) of In xGa 1- xAsGaAs and the single hetero-structure of In xGa 1- xAs on GaAs were grown by MBE method. The samples obtained have a perfect surface morphology. The alloy composition of In xGa 1- xAs layer and the growth rate were determined with high accuracy by in situ observation of the intensity oscillation of RHEED pattern. Photoluminescence peak energies of SLS's are in agreement with the calculated value by the Kronig-Penny analysis.

  1. THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions.

    PubMed

    Dietz, Roman J B; Gerhard, Marina; Stanze, Dennis; Koch, Martin; Sartorius, Bernd; Schell, Martin

    2011-12-19

    We present first results on photoconductive THz emitters for 1.55µm excitation. The emitters are based on MBE grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS) with high carrier mobility. The high mobility is achieved by spatial separation of photoconductive and trapping regions. Photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer (THz TDS). The high carrier mobility and effective absorption significantly increases the optical-to-THz conversion efficiency with THz bandwidth in excess of 3 THz. PMID:22274179

  2. Graded Al sub x Ga sub 1-x as photoconductive devices for high efficiency picosecond optoelectronic switching

    SciTech Connect

    Morse, J.D.; Mariella, R.P. ); Dutton, R.W. . Center for Integrated Systems)

    1990-10-01

    Picosecond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduce the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap Al{sub x}Ga{sub 1-x}As active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE). 7 refs., 6 figs.

  3. Absorption coefficients of GeSn extracted from PIN photodetector response

    NASA Astrophysics Data System (ADS)

    Ye, Kaiheng; Zhang, Wogong; Oehme, Michael; Schmid, Marc; Gollhofer, Martin; Kostecki, Konrad; Widmann, Daniel; Körner, Roman; Kasper, Erich; Schulze, Jörg

    2015-08-01

    In this paper the optical absorption of the GeSn PIN photodetector was investigated. The vertical GeSn PIN photodetectors were fabricated by molecular beam epitaxy (MBE) and dry etching. By means of current density-voltage (J-V) and capacity-voltage (C-V) measurements the photodetector device was characterized. The absorption coefficients of GeSn material were finally extracted from the optical response of PIN structure. With further direct bandgap analysis the influences of device structure was proved negligible.

  4. Molecular beam epitaxy of CdTe on GaAs substrates and HgCdTe on CdTe/GaAs alternate substrates

    SciTech Connect

    Lange, M.D.

    1993-12-31

    Two aspects of molecular-beam epitaxy (MBE) of the infrared sensitive semiconductor Hg{sub 1-x}Cd{sub x}Te were investigated: control of the substrate temperature by infrared pyrometer in addition to rear thermocouple, and improvement of CdTe/GaAs alternate substrates. Pyrometer behavior was recorded while controlling the temperatures of growing Hg{sub 1-x}Cd{sub x}Te with a frontal thermocoupled that contacted their surfaces. These recordings were interpreted in terms of emission and absorption, transmission and reflection, and thin-film interference. Based on these results, temperature control by rear thermocouple was reexamined, resulting in improved technique of that temperature control method as well. A temperature control technique combining both the pyrometer and the rear thermocoupled was developed; and evidence is presented and the rear thermocouple was developed; and evidence is presented for the resulting improvement in crystalline and electrical quality of MBE Hg{sub 1-x}Cd{sub x}Te. Investigations of Hg{sub 1-x}Cd{sub x}Te MBE onto more afforadable, larger, and more rugged CdTe/GaAs alternate substrates focused chiefly on improving the MBE of CdTe onto GaAs. This heteroepitaxy was studied primarily in terms of the influences on CdTe crystalline quality of the mismatches in bonding character, lattice spacing, thermal expansion, and charge imbalance between these two zincblende crystals. A novel dual epitaxial relationship, CdTe(331)B/GaAs(112)B and CdTe (112)B/GaAs(112)B, was discovered in these investigations; and the nonparellel orientation proves superior to the parallel orientation and to both orientations of the previously known CdTe(111)B/GaAs(001) and CdTe(001)/GaAs(001) dual epitaxial relationship. A charge imbalance model, applied to these four heterointerfaces, predicts the balancing of that charge by movement of electrons into or out of the heterointerfacial dangling bonds, which exist due to the lattice mismatch.

  5. High power operation of λ ∼ 5.2–11 μm strain balanced quantum cascade lasers based on the same material composition

    SciTech Connect

    Bandyopadhyay, N.; Bai, Y.; Slivken, S.; Razeghi, M.

    2014-08-18

    A technique based on composite quantum wells for design and growth of strain balanced Al{sub 0.63}In{sub 0.37}As/Ga{sub 0.35}In{sub 0.65}As/Ga{sub 0.47}In{sub 0.53}As quantum cascade lasers (QCLs) by molecular beam epitaxy (MBE), emitting in 5.2–11 μm wavelength range, is reported. The strained Al{sub 0.63}In{sub 0.37}As provides good electron confinement at all wavelengths, and strain balancing can be achieved through composite wells of Ga{sub 0.35}In{sub 0.65}As/Ga{sub 0.47}In{sub 0.53}As for different wavelength. The use of these fixed composition materials can avoid the need for frequent calibration of a MBE reactor to grow active regions with different strain levels for different wavelengths. Experimental results for QCLs emitting at 5.2, 6.7, 8.2, 9.1, and 11 μm exhibit good wall plug efficiencies and power across the whole wavelength range. It is shown that the emission wavelength can be predictably changed using the same design template. These lasers are also compatible with a heterogeneous broadband active region, consisting of multiple QCL cores, which can be produced in a single growth run.

  6. X-ray reflectivity from ZnSe/GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Ulyanenkov, A.; Takase, A.; Kuribayashi, M.; Ishida, K.; Ohtake, A.; Arai, K.; Hanada, T.; Yasuda, T.; Yao, T.; Tomita, H.; Komiya, S.

    1999-02-01

    ZnSe/GaAs heterostructures have been studied using x-ray reflectivity. Two samples grown by molecular beam epitaxy (MBE) differed in initial growing conditions; the first was prepared by Se treatment of a GaAs substrate, and the second one was exposed to Zn before growth of the ZnSe film. The structure and morphology of the interface between the ZnSe film and GaAs substrate were investigated. The experimental x-ray reflectivity curves, measured at different wavelengths, were simulated using a distorted-wave Born approximation method. Fitting the experimental data indicated the presence of a Ga2Se3 transition layer between the ZnSe film and GaAs substrate for the Se-treated sample, confirming that Zn treatment during the MBE growing process improves the interface quality. Furthermore, the simulations indicated that the concentration of the Ga2Se3 was less than unity. From this, we propose that the transition layer is discontinuous, e.g., possesses an island-like morphology.

  7. Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

    SciTech Connect

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2012-09-10

    The structural properties and band offset determination of p-channel staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to 'virtual substrate.' Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 {+-} 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

  8. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P.; Koukoula, T.; Kehagias, Th.; Komninou, Ph.; Konstantinidis, G.; Georgakilas, A.

    2016-06-01

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO2 mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  9. Contrast-enhanced molecular ultrasound differentiates endoglin genotypes in mouse embryos.

    PubMed

    Denbeigh, J M; Nixon, B A; Lee, J J Y; Jerkic, M; Marsden, P A; Letarte, M; Puri, M C; Foster, F S

    2015-01-01

    Targeted ultrasound contrast imaging has the potential to become a reliable molecular imaging tool. A better understanding of the quantitative aspects of molecular ultrasound technology could facilitate the translation of this technique to the clinic for the purposes of assessing vascular pathology and detecting individual response to treatment. The objective of this study was to evaluate whether targeted ultrasound contrast-enhanced imaging can provide a quantitative measure of endogenous biomarkers. Endoglin, an endothelial biomarker involved in the processes of development, vascular homeostasis, and altered in diseases, including hereditary hemorrhagic telangiectasia type 1 and tumor angiogenesis, was the selected target. We used a parallel plate perfusion chamber in which endoglin-targeted (MBE), rat isotype IgG2 control and untargeted microbubbles were perfused across endoglin wild-type (Eng+/+), heterozygous (Eng+/-) and null (Eng-/-) embryonic mouse endothelial cells and their adhesion quantified. Microbubble binding was also assessed in late-gestation, isolated living transgenic Eng+/- and Eng+/+ embryos. Nonlinear contrast-specific ultrasound imaging performed at 21 MHz was used to collect contrast mean power ratios for all bubble types. Statistically significant differences in microbubble binding were found across genotypes for both in vitro (p<0.05) and embryonic studies (p<0.001); MBE binding was approximately twofold higher in Eng+/+ cells and embryos compared with their Eng+/- counterparts. These results suggest that molecular ultrasound is capable of reliably differentiating between molecular genotypes and relating receptor densities to quantifiable molecular ultrasound levels. PMID:25298070

  10. Development of sediment load estimation models by using artificial neural networking techniques.

    PubMed

    Hassan, Muhammad; Ali Shamim, M; Sikandar, Ali; Mehmood, Imran; Ahmed, Imtiaz; Ashiq, Syed Zishan; Khitab, Anwar

    2015-11-01

    This study aims at the development of an artificial neural network-based model for the estimation of weekly sediment load at a catchment located in northern part of Pakistan. The adopted methodology has been based upon antecedent sediment conditions, discharge, and temperature information. Model input and data length selection was carried out using a novel mathematical tool, Gamma test. Model training was carried out by using three popular algorithms namely Broyden-Fletcher-Goldfarb-Shanno (BFGS), back propagation (BP), and local linear regression (LLR) using forward selection of input variables. Evaluation of the best model was carried out on the basis of basic statistical parameters namely R-square, root mean squared error (RMSE), and mean biased error (MBE). Results indicated that BFGS-based ANN model outperformed all other models with significantly low values of RMSE and MBE. A strong correlation was also found between the observed and estimated sediment load values for the same model as the value of Nash-Sutcliffe model efficiency coefficient (R-square) was found to be quite high as well. PMID:26463089

  11. Ultrasonic monitoring of erosion/corrosion thinning rates in industrial piping systems.

    PubMed

    Honarvar, Farhang; Salehi, Farzaneh; Safavi, Vahid; Mokhtari, Arman; Sinclair, Anthony N

    2013-09-01

    Monitoring pipe wall erosion/corrosion thinning rates is an important issue in petrochemical and power generation industries. In this paper, two signal processing techniques are utilized for estimating the thinning rate based on ultrasonic pipe wall thickness data collected over a short period of time. The first is a combination of cross-correlation and polynomial curve fitting and the second is a model-based estimation (MBE) scheme. These techniques are applied to data collected from an accelerated thinning rate apparatus and both show that they are capable of estimating the thinning rates quickly in short time periods with good accuracy. In laboratory applications, thinning rates as low as 10 μm/year were measured within 15 days with an uncertainty of ±1.5 μm/year by both techniques. Although the MBE technique can yield marginally better accuracy, the greater stability and computational speed of the cross-correlation technique make it the preferred choice for industrial use.

  12. Wide-band (2.5 - 10.5 µm), high-frame rate IRFPAs based on high-operability MCT on silicon

    NASA Astrophysics Data System (ADS)

    Crosbie, Michael J.; Giess, Jean; Gordon, Neil T.; Hall, David J.; Hails, Janet E.; Lees, David J.; Little, Christopher J.; Phillips, Tim S.

    2010-04-01

    We have previously presented results from our mercury cadmium telluride (MCT, Hg1-xCdxTe) growth on silicon substrate technology for different applications, including negative luminescence, long waveband and mid/long dual waveband infrared imaging. In this paper, we review recent developments in QinetiQ's combined molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) MCT growth on silicon; including MCT defect density, uniformity and reproducibility. We also present a new small-format (128 x 128) focal plane array (FPA) for high frame-rate applications. A custom high-speed readout integrated circuit (ROIC) was developed with a large pitch and large charge storage aimed at producing a very high performance FPA (NETD ~10mK) operating at frame rates up to 2kHz for the full array. The array design allows random addressing and this allows the maximum frame rate to be increased as the window size is reduced. A broadband (2.5-10.5 μm) MCT heterostructure was designed and grown by the MBE/MOVPE technique onto silicon substrates. FPAs were fabricated using our standard techniques; wet-etched mesa diodes passivated with epitaxial CdTe and flip-chip bonded to the ROIC. The resulting focal plane arrays were characterized at the maximum frame rate and shown to have the high operabilities and low NETD values characteristic of our LWIR MCT on silicon technology.

  13. Fabrication of Single-Photon Sources by Use of Pyramidal Quantum-Dot Microcavities

    NASA Astrophysics Data System (ADS)

    Rülke, Daniel; Reinheimer, C.; Schaadt, D. M.; Kalt, H.; Hetterich, M.

    In recent years the interest in single-photon emitters for quantum-optical applications is strongly increasing. For this purpose, we have investigated In(Ga)As quantum-dots (QDs) embedded in reversed pyramidal GaAs microcavities (Fig. 52.1a). Even though it has been shown recently, that such cavities can act as high-Q optical resonators [1], our focus has been on the directional radiation of the QD emission due to reflection at the facets of the reversed pyramids. With QDs embedded close to the vertex of the four facets and a base angle adaptable between 35° and 55° the pyramids can be perceived as a kind of retroreflector. Since the QD layer is inserted near the tip of the predicted reversed pyramid during molecular-beam epitaxial (MBE) growth, the average number of QDs inside the cavity can be reduced to one, depending on the size of the pyramid and density of QDs. The pyramidal cavities are shaped after MBE growth by a wet-chemical etching process with a solution of H3PO4, H2O2 and H2O [2, 3].

  14. Semiconductor Hall magnetometers for magnetic measurement of (In,Cr)As quantum dots

    NASA Astrophysics Data System (ADS)

    Kim, Joon-Il; Guan, T.; von Molnar, S.; Xiong, P.; Wang, S. L.; Wang, H. L.; Zhao, J. H.

    2014-03-01

    Recently, SQUID magnetometry measurements of MBE-grown self-assembled (In,Cr)As QDs showed magnetic hysteresis indicating possible existence of ferromagnetic ordering above 300 K. However, the temperature dependence of the remnant magnetization did not follow the standard Brillouin-like behavior, and the interpretation of the data and elucidation of the origin of the ferromagnetism in the QDs have been hindered by the large ensemble-averaged measurement. Measurements on small clusters or even individual QDs would facilitate a direct correlation of the measured magnetic properties with their structural and chemical characteristics, possibly enabling a definitive understanding of the origin of the ferromagnetism in the diluted magnetic semiconductor QDs. Towards this goal, we have fabricated integrated micro-Hall magnetometers based on high-mobility GaAs/AlGaAs 2DEG in order to facilitate static and dynamic magnetic measurements of the QDs via the Hall gradiometry technique. Integrated structures of (In,Cr)As QDs on top of a GaAs/AlGaAs heterostructure were grown entirely in situ by MBE. Micro-Hall magnetometer devices with six Hall-crosses were fabricated using photolithography and wet chemical etching. Using carefully calibrated selective chemical etching, all QDs were removed except those on three of the Hall-crosses so as to enable gradiometry measurement. Results of on-going measurements will be discussed. Work supported by NSF grants DMR-09008625 and DMR-1308613.

  15. Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system

    SciTech Connect

    Rutkowski, M. M.; Zeng Zhaoquan; McNicholas, K. M.; Brillson, L. J.

    2013-06-15

    We designed a mechanism and the accompanying sample holders to transfer between a VEECO 930 oxide molecular beam epitaxy (MBE) and a PHI Versa Probe X-ray photoemission spectroscopy (XPS) chamber within a multiple station growth, processing, and analysis system through ultrahigh vacuum (UHV). The mechanism consists of four parts: (1) a platen compatible with the MBE growth stage, (2) a platen compatible with the XPS analysis stage, (3) a sample coupon that is transferred between the two platens, and (4) the accompanying UHV transfer line. The mechanism offers a robust design that enables transfer back and forth between the growth chamber and the analysis chamber, and yet is flexible enough to allow transfer between standard sample holders for thin film growth and masked sample holders for making electrical contacts and Schottky junctions, all without breaking vacuum. We used this mechanism to transfer a barium strontium titanate thin film into the XPS analysis chamber and performed XPS measurements before and after exposing the sample to the air. After air exposure, a thin overlayer of carbon was found to form and a significant shift ({approx}1 eV) in the core level binding energies was observed.

  16. Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3

    NASA Astrophysics Data System (ADS)

    Zeng, Z. Q.; Podpirka, A.; Kirchoefer, S. W.; Asel, T. J.; Brillson, L. J.

    2015-05-01

    We report on the native defect and microwave properties of 1 μm thick Ba0.50Sr0.50TiO3 (BST) films grown on MgO (100) substrates by molecular beam epitaxy (MBE). Depth-resolved cathodoluminescence spectroscopy (DRCLS) showed high densities of native point defects in as-deposited BST films, causing strong subgap emission between 2.0 eV and 3.0 eV due to mixed cation VC and oxygen Vo vacancies. Post growth air anneals reduce these defects with 2.2, 2.65, and 3.0 eV VO and 2.4 eV VC intensities decreasing with increasing anneal temperature and by nearly two orders of magnitude after 950 °C annealing. These low-defect annealed BST films exhibited high quality microwave properties, including room temperature interdigitated capacitor tunability of 13% under an electric bias of 40 V and tan δ of 0.002 at 10 GHz and 40 V bias. The results provide a feasible route to grow high quality BST films by MBE through post-air annealing guided by DRCLS.

  17. Modified Brinkman equation for a free flow problem at the interface of porous surfaces: The Cantor-Taylor brush configuration case

    NASA Astrophysics Data System (ADS)

    Shavit, U.; Bar-Yosef, G.; Rosenzweig, R.; Assouline, S.

    2002-12-01

    The free flow problem above, at the surface interface, and inside a Cantor-Taylor brush configuration (CTB), simulating a porous medium, was studied. Particle image velocimetry (PIV) measurements confirm that the microscale Stokes equation provides an accurate solution to the CTB microscale flow problem. A comparison between the results of the averaged microscale Stokes equation and that of the Brinkman equation using an apparent viscosity shows that the concept of "apparent viscosity" did not provide a satisfactory agreement between the two approaches. In order to develop a description of the average velocity profile across the interface flow region, theoretical and numerical analyses were performed. An averaging procedure of the Navier Stokes equations provided a set of three equations, which were used to predict the average velocity in the fluid phase f. This set of equations is the suggested modified Brinkman equation (MBE). The comparison between the results of the Stokes equation and the MBE shows that optimizing the size of the averaging representative volume provides a good fit between the flow problem and the solution of the modified Brinkman equation.

  18. Surfactant assisted growth of MgO films on GaN

    SciTech Connect

    Paisley, Elisibeth A.; Shelton, T C; Mita, S; Gaddy, Brian E.; Irving, D L; Christen, Hans M; Sitar, Z; Biegalski, Michael D; Maria, Jon Paul

    2012-01-01

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface due to stabilizing the {111} rocksalt facet. MBE growth of MgO in water terminates after several monolayers, and is attributed to saturation of surface active sites needed to facilitate the Mg oxidation reaction. MgO films prepared by PLD grow continuously, this occurs due to the presence of excited oxidizing species in the laser plasma eliminate the need for catalytic surface sites. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly two order of magnitude reduction in leakage current density for the smoother surfactant-assisted samples. Collectively, these data verify numerous predictions and calculations regarding the role of H-termination in regulating the habit of MgO crystals.

  19. Weak Emission-line Quasars in the Context of a Modified Baldwin Effect

    NASA Astrophysics Data System (ADS)

    Shemmer, Ohad

    2016-01-01

    Based on spectroscopic data for a sample of high-redshift quasars, I will show that the anti-correlation between the rest-frame equivalent width (EW) of the C IV λ1549 broad-emission line and the Hβ-based Eddington ratio extends across the widest possible ranges of redshift (0 < z < 3.5) and bolometric luminosity(~1044 < L < ~1048 erg s-1). Given this anti-correlation, hereby referred to as a modified Baldwin effect (MBE), weak emission line quasars (WLQs), typically showing EW(C IV) < ~10 Å, are expected to have extremely high Eddington ratios (L/LEdd > ~4). I will present new near-infrared spectroscopy of the broad Hβ line, as well as complementary EW(C IV) information, for all WLQs for which such information is currently available, nine sources in total. I will show that while four of these WLQs can be accommodated by the MBE, the otherfive deviate significantly from this relation, at the > ~3σ level, by exhibiting C IV lines much weaker than predicted from their Hβ-based Eddington ratios. Assuming the supermassive black hole masses in all quasars can be determined reliably using the single-epoch Hβ-method, these results indicate that EW(C IV)cannot depend solely on the Eddington ratio. I will briefly discuss a strategy for further investigation into the roles that basic physical properties play in controlling the relative strengths of broad-emission lines in quasars.

  20. High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development

    NASA Astrophysics Data System (ADS)

    Bommena, R.; Ketharanathan, S.; Wijewarnasuriya, P. S.; Dhar, N. K.; Kodama, R.; Zhao, J.; Buurma, C.; Bergeson, J. D.; Aqariden, F.; Velicu, S.

    2015-09-01

    The development of low noise-equivalent differential temperature (NEDT), high-operability midwave infrared (MWIR) focal plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates is reported. High-quality n-type MWIR HgCdTe layers with a cutoff wavelength of 4.90 μm at 77 K and a carrier concentration of 1-2 × 1015 cm-3 were grown on CdTe/Si substrates by MBE. Highly uniform composition and thickness over 3-inch areas were demonstrated, and low surface defect densities (voids ~5 × 102 cm-2, micro-defects ~5 × 103 cm-2) and etch pit density (~3.5 × 106 cm-2) were measured. This material was used to fabricate 320 × 256, 30 μm pitch FPAs with planar device architecture; arsenic implantation was used to achieve p-type doping. Radiometric and noise characterization was also performed. A low NEDT of 13.8 m K at 85 K for a 1 ms integration time with f/#2 optics was measured. The NEDT operability was 99% at 120 K with a mean dark current noise of 8.14 × 10-13 A/pixel. High-quality thermal images were obtained from the FPA up to a temperature of 150 K.

  1. An ultra-compact, high-throughput molecular beam epitaxy growth system

    SciTech Connect

    Baker, A. A.; Hesjedal, T.; Braun, W. E-mail: fischer@createc.de; Rembold, S.; Fischer, A. E-mail: fischer@createc.de; Gassler, G.

    2015-04-15

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)

  2. Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

    PubMed

    Liu, Shanshan; Yuan, Xiang; Wang, Peng; Chen, Zhi-Gang; Tang, Lei; Zhang, Enze; Zhang, Cheng; Liu, Yanwen; Wang, Weiyi; Liu, Cong; Chen, Chen; Zou, Jin; Hu, Weida; Xiu, Faxian

    2015-08-25

    Two dimensional (2D) alloys, especially transition metal dichalcogenides, have attracted intense attention owing to their band-gap tunability and potential optoelectrical applications. Here, we report the controllable synthesis of wafer-scale, few-layer GaTexSe1-x alloys (0 ≤ x ≤ 1) by molecular beam epitaxy (MBE). We achieve a layer-by-layer growth mode with uniform distribution of Ga, Te, and Se elements across 2 in. wafers. Raman spectroscopy was carried out to explore the composition-dependent vibration frequency of phonons, which matches well with the modified random-element-isodisplacement model. Highly efficient photodiode arrays were also built by depositing few-layer GaTe0.64Se0.36 on n-type Si substrates. These p-n junctions have steady rectification characteristics with a rectifying ratio exceeding 300 and a high external quantum efficiency around 50%. We further measured more devices on MBE-grown GaTexSe1-x/Si heterostructures across the full range to explore the composition-dependent external quantum efficiency. Our study opens a new avenue for the controllable growth of 2D alloys with wafer-scale homogeneity, which is a prominent challenge in 2D material research.

  3. An ultra-compact, high-throughput molecular beam epitaxy growth system.

    PubMed

    Baker, A A; Braun, W; Gassler, G; Rembold, S; Fischer, A; Hesjedal, T

    2015-04-01

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr2O3 on c-plane sapphire and ferrimagnetic Fe3O4 on MgO (001).

  4. Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1987-01-01

    The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

  5. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    SciTech Connect

    Prakash, Abhinav Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  6. Enhanced electrical and magnetic properties in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited on CaTiO{sub 3}-buffered silicon substrates

    SciTech Connect

    Adamo, C.; Méchin, L.; Guillet, B.; Wu, S.; Routoure, J.-M.; Heeg, T.; Katz, M.; Pan, X. Q.; Mercone, S.; Schubert, J.; Zander, W.; Misra, R.; Schiffer, P.; and others

    2015-06-01

    We investigate the suitability of an epitaxial CaTiO{sub 3} buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with silicon. The magnetic and electrical properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films deposited by MBE on CaTiO{sub 3}-buffered silicon (CaTiO{sub 3}/Si) are compared with those deposited on SrTiO{sub 3}-buffered silicon (SrTiO{sub 3}/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO{sub 3} buffer layer. These results are relevant to device applications of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films on silicon substrates.

  7. Impurity doping of HgTe--CdTe superlattices during growth by molecular-beam epitaxy

    SciTech Connect

    Wroge, M.L.; Peterman, D.J.; Feldman, B.J.; Morris, B.J.; Leopold, D.J.; Broerman, J.G.

    1989-03-01

    We demonstrate the use of In and Ag as n- and p-type dopants, respectively, to controllably dope (100)-oriented HgTe--CdTe superlattices during molecular-beam epitaxial (MBE) growth. When normalized by the superlattice growth rate, the low-temperature Hall-carrier concentrations of both In- and Ag-doped superlattices are shown to have an exponential dependence on the respective effusion-cell temperatures in the electron and hole concentration ranges of approx.10/sup 16/ to 10/sup 18/ cm/sup -3/ . The upper limit on the diffusion coefficient for In at the low MBE growth temperature of approx.160 /sup 0/C is determined to be 5 x 10/sup -15/ cm/sup 2/ /s by use of secondary-ion mass spectrometry. Hall-effect and current--voltage measurements verify that the combination of In and Ag doping allows the formation of p--n electrical junctions. These results provide the first evidence of p--n junction formation in a HgTe--CdTe superlattice.

  8. Epitaxial growth of CoxMnySiz (111) thin films in the compositional range around the Heusler alloy Co2MnSi

    SciTech Connect

    He, L.; Chu, Y.; Collins, B. A. and Tsui, F.

    2011-03-18

    Epitaxial growth and structural properties of Co{sub x}Mn{sub y}Si{sub z} thin films on Ge (111) substrates, including the Heusler alloy Co{sub 2}MnSi (111), have been studied using combinatorial molecular beam epitaxy (MBE) techniques. In situ reflection high energy electron diffraction and ex situ x-ray diffraction experiments show that high quality coherent MBE growth with fcc (111) stacking can be achieved over a relatively large composition space that includes Co{sub 2}MnSi. The highest structural and chemical ordering is observed near the composition of Co{sub 0.63}Mn{sub 0.14}Si{sub 0.23} rather than that at the Heusler stoichiometry of Co{sub 2}MnSi. The in-plane crystallographic axis of the fcc film exhibits a 60{sup o} rotation with respect to that of the Ge substrate. The rotation appears to be originated at the film-substrate interface, as a result of the symmetry and stacking of the Ge (111) surface reconstruction.

  9. Preparation and characterization of hexagonal MnTe and ZnO layers

    NASA Astrophysics Data System (ADS)

    Przedziecka, E.; Kamiska, E.; Dynowska, E.; Butkut, R.; Dobrowolski, W.; Kpa, H.; Jakiela, R.; Aleszkiewicz, M.; Usakowska, E.; Janik, E.; Kossut, J.

    2005-02-01

    MnTe layers of high crystalline quality were grown on Al2O3 substrates (0001)-oriented by molecular beam epitaxy (MBE). Characterization of MnTe by X-ray diffraction (XRD) revealed a hexagonal structure of NiAs-type with lattice parameters a = 4.166 Å and c = 6.694 Å. The energy gap of MnTe, evaluated from the optical transmission spectra measured at 10 K, was found to be 1.7 eV. The Néel temperature obtained from neutron diffraction (ND) measurements was 284.1 K. ZnO:N layers were fabricated by thermal oxidation of metallic Zn and ZnTe grown by MBE on different substrates. In order to achieve p-type conductivity, the starting materials were doped by nitrogen. The XRD spectra of the oxidized samples showed peaks related to hexagonal ZnO. The Hall measurements demonstrated p-type conductivity with the hole concentration of 2.2 × 1019 cm-3 and 6.7 × 1017 cm-3 for ZnO:N deposited on GaAs and ZnTe, respectively.

  10. Expanding the chemical diversity of natural esters by engineering a polyketide-derived pathway into Escherichia coli.

    PubMed

    Menendez-Bravo, Simón; Comba, Santiago; Sabatini, Martín; Arabolaza, Ana; Gramajo, Hugo

    2014-07-01

    Microbial fatty acid (FA)-derived molecules have emerged as promising alternatives to petroleum-based chemicals for reducing dependence on fossil hydrocarbons. However, native FA biosynthetic pathways often yield limited structural diversity, and therefore restricted physicochemical properties, of the end products by providing only a limited variety of usually linear hydrocarbons. Here we have engineered into Escherichia coli a mycocerosic polyketide synthase-based biosynthetic pathway from Mycobacterium tuberculosis and redefined its biological role towards the production of multi-methyl-branched-esters (MBEs) with novel chemical structures. Expression of FadD28, Mas and PapA5 enzymes enabled the biosynthesis of multi-methyl-branched-FA and their further esterification to an alcohol. The high substrate tolerance of these enzymes towards different FA and alcohol moieties resulted in the biosynthesis of a broad range of MBE. Further metabolic engineering of the MBE producer strain coupled this system to long-chain-alcohol biosynthetic pathways resulting in de novo production of branched wax esters following addition of only propionate.

  11. The activity of Mblk-1, a mushroom body-selective transcription factor from the honeybee, is modulated by the ras/MAPK pathway.

    PubMed

    Park, Jung-Min; Kunieda, Takekazu; Kubo, Takeo

    2003-05-16

    We previously identified a gene, termed Mblk-1, that encodes a putative transcription factor with two DNA-binding motifs expressed preferentially in the mushroom body of the honeybee brain, and its preferred binding sequence, termed Mblk-1-binding element (MBE) (Takeuchi, H., Kage, E., Sawata, M., Kamikouchi, A., Ohashi, K., Ohara, M., Fujiyuki, T., Kunieda, T., Sekimizu, K., Natori, S., and Kubo, T. (2001) Insect Mol Biol 10, 487-494; Park, J.-M., Kunieda. T., Takeuchi, H., and Kubo, T. (2002) Biochem. Biophys. Res. Commun. 291, 23-28). In the present study, the effect of Mblk-1 on transcription of genes containing MBE in Drosophila Schneider's Line 2 cells was examined using a luciferase assay. Mblk-1 expression transactivated promoters containing MBEs approximately 2-7-fold. Deletion experiments revealed that RHF2, the second DNA-binding domain of Mblk-1, was necessary for the transcriptional activity. Furthermore, mitogen-activated protein kinase (MAPK) phosphorylated Mblk-1 at Ser-444 in vitro, and the Mblk-1-induced transactivation was stimulated by phosphorylation of Ser-444 by the Ras/MAPK pathway in the luciferase assay. These results suggest that Mblk-1 is a transcription factor that might function in the mushroom body neuronal circuits downstream of the Ras/MAPK pathway in the honeybee brain.

  12. Hemispatial neglect evaluated by visual line bisection task in schizophrenic patients and their unaffected siblings.

    PubMed

    Ozel-Kizil, Erguvan Tugba; Baskak, Bora; Gunes, Emel; Cicek, Metehan; Atbasoglu, Esref Cem

    2012-12-30

    Visuospatial attentional asymmetry has been investigated by the line bisection task in patients with schizophrenia, however, those studies are in small number and the results are controversial. The present study aimed to investigate hemispatial neglect in patients with schizophrenia (n=30), their healthy siblings (n=30) and healthy individuals (n=24) by a computerized version of the line bisection task. Deviation from the midline for both hemispaces (mean bisection error-MBE) were calculated and the effects of both hand and line length were controlled. Repeated measures ANOVA yielded a significant hemispace effect for the MBE scores, but no group or group×hemispace interaction effect, i.e., all three groups were inclined to a leftward bias in the left and a rightward bias in the right hemispace. MBEs were significantly different from "zero" only for the right hemispace in siblings and for the left hemispace in controls. Negative symptoms were significantly correlated with the bisection errors in the right hemispace. The results of the present study do not support aberrant hemispheric asymmetry, but bigger bisection errors in schizophrenia.

  13. An ultra-compact, high-throughput molecular beam epitaxy growth system

    NASA Astrophysics Data System (ADS)

    Baker, A. A.; Braun, W.; Gassler, G.; Rembold, S.; Fischer, A.; Hesjedal, T.

    2015-04-01

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr2O3 on c-plane sapphire and ferrimagnetic Fe3O4 on MgO (001).

  14. Epitaxial Growth of Two-Dimensional Stanene

    NASA Astrophysics Data System (ADS)

    Jia, Jinfeng

    Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth. Ge-based germanene was realized by mechanical exfoliation. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations, or can support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall (QAH) effect. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene. In cooperation with Fengfeng Zhu, Wei-jiong Chen, Yong Xu, Chun-lei Gao, Dan-dan Guan, Canhua Liu, Dong Qian, Shou-Cheng Zhang.

  15. Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy

    SciTech Connect

    Mishima, T. D.

    2011-10-01

    High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

  16. Method of fabricating germanium and gallium arsenide devices

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  17. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    PubMed

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs. PMID:27427737

  18. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  19. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    NASA Astrophysics Data System (ADS)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  20. High-efficiency photovoltaic cells

    DOEpatents

    Yang, H.T.; Zehr, S.W.

    1982-06-21

    High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

  1. MWIR InSb detector with nBn architecture for high operating temperature

    NASA Astrophysics Data System (ADS)

    Perez, J.-P.; Evirgen, A.; Abautret, J.; Christol, P.; Cordat, A.; Nedelcu, A.

    2015-01-01

    In this communication, we report results obtained on a new InSb/InAlSb/InSb `bariode', grown by MBE on (100)- oriented InSb substrate. Because of a very weak valence band offset with InSb (~ 25meV), InAlSb is a good candidate as a barrier layer for electrons. However, due to lattice mismatch with the InSb substrate, careful growth study of InAlSb was made to insure high crystal quality. As a result, InSb-based nBn detector device exhibits dark current density equals to 1x10-9A.cm-2 at 77K: two decades lower than Insb standard pin photodiode with similar cut-off wavelength. Moreover, compared to standard pn (or pin) InSb-based photodetectors fabricated by implanted planar process or by molecular beam epitaxy (MBE), we demonstrate that the reachable working temperature, around 120 K, of the InSbbased nBn detector is respectively higher than 40 K and 20 K than the previous. Such result demonstrates the potentiality of Insb detectors with nBn architecture to reach the high operating temperature.

  2. A continuous point measure for quantifying skull deformation in medical diagnostics

    PubMed Central

    Strachan, Ben; O'Connor, Bridget; Khandoker, Ahsan

    2014-01-01

    Deformational plagiocephaly (DP) manifests in a deformed skull primarily caused by retaining a constant sleeping position in infants. Manual measures of skull asymmetry based on MRI or CT scans combined with the cranial vault asymmetry index (CVAI) provides information on the extent of asymmetry. CVAI uses four points on the skull as markers for the asymmetry index but tends to underestimate the deformity because of the lack of sampling points. Computer-based continuous-point methods may be a more objective measure with better sensitivity for the skull contour. The outline of the skull circumference of infants with confirmed cranial deformity was obtained from the literature and analysed applying the mean bending energy (MBE) obtained from the Hermitian wavelet. MBE was shown to correlate with CVAI in the current sample and has the potential to add both quantitative and visual information in 2D or 3D space for the clinician to diagnose DP. Wavelet-based continuous-point estimation of skull asymmetry is a useful method as it is more sensitive to mild deformation anywhere along the skull outline and in assessing slow but progressive improvement as a result of treatment. The broader significance is that this method can be applied to other structural pathology analysis in clinical practice. PMID:26609378

  3. Validation of TRMM Precipitation Radar satellite data over Indonesian region

    NASA Astrophysics Data System (ADS)

    Prasetia, Rakhmat; As-syakur, Abd. Rahman; Osawa, Takahiro

    2013-05-01

    Research has been conducted to validate monthly and seasonal rain rates derived from the Tropical Rainfall Measuring Mission Precipitation Radar (PR) using rain gauge data analysis from 2004 to 2008. The study area employed 20 gauges across Indonesia to monitor three Indonesian regional rainfall types. The relationship of PR and rain gauge data statistical analysis included the linear correlation coefficient, the mean bias error (MBE), and the root mean square error (RMSE). Data validation was conducted with point-by-point analysis and spatial average analysis. The general results of point-by-point analysis indicated satellite data values of medium correlation, while values of MBE and RMSE tended to indicate underestimations with high square errors. The spatial average analysis indicated the PR data values are lower than gauge values of monsoonal and semi-monsoonal type rainfall, while anti-monsoonal type rainfall was overestimated. The validation analysis showed very good correlation with the gauge data of monsoonal type rainfall, high correlation for anti-monsoonal type rainfall, but medium correlation for semi-monsoonal type rainfall. In general, the statistical error level of monthly seasonal monsoonal type conditions is more stable compared to other rainfall types. Unstable correlations were observed in months of high rainfall for semi-monsoonal and anti-monsoonal type rainfall.

  4. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Ksendzov, A.; Dejewski, Suzan M.; Jones, Eric W.; Fathauer, Robert W.; Krabach, Timothy N.; Maserjian, Joseph

    1991-01-01

    A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

  5. On the growth conditions of 3-5 μm well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Luna, E.; Guzmán, A.; Trampert, A.; Sánchez-Rojas, J. L.; Calleja, E.

    2003-10-01

    In this work, we investigate the influence of the molecular beam epitaxy (MBE) growth conditions (substrate temperature and arsenic flux) on the photovoltaic (PV) behavior and asymmetric characteristics of nominally identical well-doped AlGaAs/AlAs/GaAs double-barrier quantum well infrared photodetectors. This PV effect, already studied and reported in the literature, has been attributed to unintentional asymmetries of the potential profile introduced during the MBE growth process; in particular, due to an inequivalence of the AlAs layer properties or, more plausibly, to local space-charge regions originating from silicon segregation. The different "unintended" asymmetries for the samples considered in this work, validated by both dark-current and responsivity measurements, point at first glance to the existence of structural dissimilarities affecting the PV response. Hence, in order to clarify the influence of the suggested AlAs barriers inequivalence or interface roughness and quality in the origin of the PV signal we have performed a direct layer structural characterization by cross-section high resolution transmission electron microscopy. The analysis yields that regardless of the different growth conditions, the layers properties are similar, suggesting they play a minor role in the origin of the PV effect. Also this characterization tool may provide a further evidence of Si segregation being the main responsible. Concerning its growth conditions dependence, it seems that the As flux, and not only the substrate temperature, may affect Si segregation and hence the PV response.

  6. Se passivation and re-growth on ZnSe and (Zn,Mn)Se (001) epilayer surfaces

    NASA Astrophysics Data System (ADS)

    Jonker, B. T.; Krebs, J. J.; Prinz, G. A.

    1988-09-01

    We report the use of a thin Se coating to passivate and protect the surface of ZnSe and Zn1-xMnxSe (001) epilayers on GaAs(001) prior to removal from the molecular beam epitaxy (MBE) system and exposure to atmosphere. After prolonged exposure to the laboratory ambient, the samples are returned to the MBE system and the Se is thermally desorbed. The resultant surface is clean and well-ordered as demonstrated by Auger electron spectroscopy and reflection high energy electron diffraction (RHEED), and either homo- or hetero-epitaxial growth is continued. For ZnSe epilayers grown in two equal stages of a total thickness of 1 μm with an intervening passivation and 24 hour air exposure, the (004) x-ray double crystal rocking curve exhibits no increase in linewidth relative to continuously grown reference samples of the same thickness. In the case of heteroepitaxial growth of Fe films on Zn0.8Mn0.2Se, RHEED shows well-ordered single crystal growth of α-Fe(001) even at very low coverages. Ferromagnetic resonances and vibrating sample magnetometry data show these films to be of excellent magnetic quality. This Se passivation technique thus offers a ready means of transferring these II-VI epilayers from the growth system to other facilities.

  7. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    SciTech Connect

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  8. Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

    SciTech Connect

    Kasama, T. Yazdi, S.; Thuvander, M.; Siusys, A.; Gustafsson, A.; Sadowski, J.

    2015-08-07

    Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 °C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography. Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga{sub 0.82}Mn{sub 0.18} nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 ± 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga{sub 0.82}Mn{sub 0.18} nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process.

  9. Superlattice-doped silicon detectors: progress and prospects

    NASA Astrophysics Data System (ADS)

    Hoenk, Michael E.; Nikzad, Shouleh; Carver, Alexander G.; Jones, Todd J.; Hennessy, John; Jewell, April D.; Sgro, Joseph; Tsur, Shraga; McClish, Mickel; Farrell, Richard

    2014-07-01

    In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 1014 cm-2. Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.

  10. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    PubMed

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

  11. Electrical characterization of HgTe nanowires using conductive atomic force microscopy

    SciTech Connect

    Gundersen, P.; Kongshaug, K. O.; Selvig, E.; Haakenaasen, R.

    2010-12-01

    Self-organized HgTe nanowires grown by molecular beam epitaxy (MBE) have been characterized using conductive atomic force microscopy. As HgTe will degrade or evaporate at normal baking temperatures for electron beam lithography (EBL) resists, an alternative method was developed. Using low temperature optical lithography processes, large Au contacts were deposited on a sample covered with randomly oriented, lateral HgTe nanowires. Nanowires partly covered by the large electrodes were identified with a scanning electron microscope and then localized in the atomic force microscope (AFM). The conductive tip of the AFM was then used as a movable electrode to measure current-voltage curves at several locations on HgTe nanowires. The measurements revealed that polycrystalline nanowires had diffusive electron transport, with resistivities two orders of magnitude larger than that of an MBE-grown HgTe film. The difference can be explained by scattering at the rough surface walls and at the grain boundaries in the wires. The method can be a solution when EBL is not available or requires too high temperature, or when measurements at several positions along a wire are required.

  12. Evaluation of pedotransfer functions for estimating the soil water retention points

    NASA Astrophysics Data System (ADS)

    Bahmani, Omid; Palangi, Sahar

    2016-06-01

    Direct measurement of soil moisture has been often expensive and time-consuming. The aim of this study was determining the best method to estimate the soil moisture using the pedotransfer functions in the soil par2 model. Soil samples selected from the database UNSODA in three textures include sandy loam, silty loam and clay. In clay soil, the Campbell model indicated better results at field capacity (FC) and wilting point (WP) with RMSE = (0.06, 0.09) and d = (0.65, 0.55) respectively. In silty loam soil, the Epic model had accurate estimation with MBE = 0.00 at FC and Campbell model had the acceptable result of WP with RMSE = 0.03 and d = 0.77. In sandy loam, Hutson and Campbell models had a better result to estimation the FC and WP than others. Also Hutson model had an acceptable result to estimation the TAW (Total Available Water) with RMSE = (0.03, 0.04, 0.04) and MBE = (0.02, 0.01, 0.01) for clay, sandy loam and silty loam, respectively. These models demonstrate the moisture points had the internal linkage with the soil textures. Results indicated that the PTFs models simulate the agreement results with the experimental observations.

  13. Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

    SciTech Connect

    Richter, Wolfgang

    2007-06-14

    In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ('alchemy') because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.

  14. Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

    SciTech Connect

    Satapathy, Dillip K.; Jenichen, Bernd; Ploog, Klaus H.; Braun, Wolfgang

    2011-07-15

    Azimuthal reflection high-energy electron diffraction (ARHEED) and in situ grazing incidence synchrotron x-ray diffraction techniques are employed to investigate the growth, epitaxial orientation, and interfacial structure of MnAs layers grown on GaAs(001) by molecular beam epitaxy (MBE). We demonstrate the power and reliability of ARHEED scans as a routine tool in characterizing the formation of epitaxial films. The ARHEED scans clearly reveal the formation of the rectangular MnAs unit cell during growth on GaAs(001) for a MnAs layer thickness of 2.1 {+-} 0.2 monolayers with a tensile strain along the MnAs[1120] direction. A periodic coincidence site lattice, which is known to form along the MnAs [0001] direction to release the strain due to the huge lattice mismatch ({approx}30%) also produces periodic satellites of the diffraction spots in the ARHEED scan. The formation of different epitaxial orientations of MnAs during MBE growth can be directly observed using ARHEED scans. ARHEED is demonstrated to have a resolution similar to synchrotron x-ray diffraction with a double crystal monochromator, yielding full width at half maximum values of reflections as small as 0.005 reciprocal lattice units.

  15. Silicon sheet with molecular beam epitaxy for high efficiency solar cells. Final technical report, March 22, 1982-April 30, 1984

    SciTech Connect

    Not Available

    1984-01-01

    A two-year program has been carried out for the Jet Propulsion Laboratory in which the UCLA silicon MBE facility has been used to attempt to grow silicon solar cells of high efficiency. MBE ofers the potential of growing complex and arbitrary doping profiles with 10 A depth resolution. It is the only technique taht can readily grow built-in front and back surface fields of any desired depth and value in silicon solar cells, or the more complicated profiles needed for a double junction cascade cell, all in silicon, connected in series by a tunnel junction. Although the dopant control required for such structures has been demonstrated in silicon by UCLA, crystal quality at the p-n junctions is still too poor to allow the other advantages to be exploited. Results from other laboratories indicate that this problem will soon be overcome. A computer analysis of the double cascade all in silicon shows that efficiencies can be raised over that of any single silicon cell by 1 or 2%, and that open circuit voltage of almost twice that of a single cell should be possible.

  16. Compositions and chemical bonding in ceramics by quantitative electron energy-loss spectrometry

    SciTech Connect

    Bentley, J.; Horton, L.L.; McHargue, C.J.; McKernan, S.; Carter, C.B.; Revcolevschi, A.; Tanaka, S.; Davis, R.F.

    1993-12-31

    Quantitative electron energy-loss spectrometry was applied to a range of ceramic materials at a spatial resolution of <5 nm. Analysis of Fe L{sub 23} white lines indicated a low-spin state with a charge transfer of {approximately}1.5 electrons/atom onto the Fe atoms implanted into (amorphized) silicon carbide. Gradients of 2 to 5% in the Co:O stoichiometry were measured across 100-nm-thick Co{sub 3}O{sub 4} layers in an oxidized directionally solidified CoO-ZrO{sub 2} eutectic, with the highest O levels near the ZrO{sub 2}. The energy-loss near-edge structures were dramatically different for the two cobalt oxides; those for CO{sub 3}O{sub 4} have been incorrectly ascribed to CoO in the published literature. Kinetically stabilized solid solubility occurred in an AlN-SiC film grown by low-temperature molecular beam epitaxy (MBE) on {alpha}(6H)-SiC, and no detectable interdiffusion occurred in couples of MBE-grown AlN on SiC following annealing at up to 1750C. In diffusion couples of polycrystalline AlN on SiC, interfacial 8H sialon (aluminum oxy-nitride) and pockets of Si{sub 3}N{sub 4}-rich {beta}{prime} sialon in the SiC were detected.

  17. Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

    SciTech Connect

    Anders, A.; Newman, N.; Rubin, M.; Dickinson, M.; Thomson, A.; Jones, E.; Phatak, P.; Gassmann, A.

    1995-09-01

    GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30--40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the ``anode`` plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al{sub 2}O{sub 3} at a temperature from 600--800 C. The films were investigated by photoluminescence, cathodoluminescence, X-ray diffraction, and X-ray fluorescence. The film with the highest structural quality had a rocking curve with 5 arcmin, the lowest reported value for MBE growth to date.

  18. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    DOE PAGES

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As₂ molecule, Ga atom, Bi atom, and Bi₂ molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also themore » reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As₂ exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.« less

  19. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    SciTech Connect

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As₂ molecule, Ga atom, Bi atom, and Bi₂ molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also the reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As₂ exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.

  20. Band offset measurement of oxygen annealed SrTiO3/Si

    NASA Astrophysics Data System (ADS)

    Jin, Eric; Kornblum, Lior; Ahn, Charles; Walker, Fred

    Integration of the perovskite oxide SrTiO3 (STO) with silicon by molecular beam epitaxy (MBE) was initially developed for new high-K gate dielectrics, and more recently as a means to combine the multifunctional properties of oxide heterostructures with the well-established silicon platform. The band alignment at an oxide-semiconductor junction is critical in determining its electrical properties, and control over the conduction band offset is a fundamental goal of materials science. Density functional theory calculations have shown that an interface dipole forms at the STO-Si interface, with the magnitude of this dipole determined by the exact composition of the interface. If the interface is oxygen deficient, the band alignment is type II. If the interface is modified via the addition of a monolayer of oxygen atoms, the predicted heterojunction becomes type-I. We characterize the band alignment of MBE-grown STO-Si films by x-ray photoemission spectroscopy and show that the conduction band offset is negative between STO and Si. We demonstrate an experimental ~0.5 eV increase in the conduction band offset for in-situ oxygen-annealed films, in close agreement with theoretical predictions. By careful control of the interface atomic structure, we show an approach toward tuning the band offset of the STO-Si system to modify electronic transport for a variety of device applications.

  1. Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO{sub 3}

    SciTech Connect

    Zeng, Z. Q.; Podpirka, A.; Kirchoefer, S. W.; Asel, T. J.; Brillson, L. J.

    2015-05-04

    We report on the native defect and microwave properties of 1 μm thick Ba{sub 0.50}Sr{sub 0.50}TiO{sub 3} (BST) films grown on MgO (100) substrates by molecular beam epitaxy (MBE). Depth-resolved cathodoluminescence spectroscopy (DRCLS) showed high densities of native point defects in as-deposited BST films, causing strong subgap emission between 2.0 eV and 3.0 eV due to mixed cation V{sub C} and oxygen Vo vacancies. Post growth air anneals reduce these defects with 2.2, 2.65, and 3.0 eV V{sub O} and 2.4 eV V{sub C} intensities decreasing with increasing anneal temperature and by nearly two orders of magnitude after 950 °C annealing. These low-defect annealed BST films exhibited high quality microwave properties, including room temperature interdigitated capacitor tunability of 13% under an electric bias of 40 V and tan δ of 0.002 at 10 GHz and 40 V bias. The results provide a feasible route to grow high quality BST films by MBE through post-air annealing guided by DRCLS.

  2. Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy

    SciTech Connect

    Shimizu, Yukiko; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka

    2006-09-15

    The vacancy-type defects in Ga{sub 1-y}In{sub y}N{sub x}As{sub 1-x} dilute nitride films grown by atomic H-assisted molecular beam epitaxy (H-MBE) were investigated. The positron annihilation measurements showed that the densities of vacancy-type defects in GaN{sub x}As{sub 1-x} (x=0%-1.3%) films grown under an optimized atomic H flux were as low as that for a liquid encapsulated Czochralski (LEC) GaAs substrate. Further, the influence of vacancy-type defects on the crystal quality and optical properties were studied by x-ray diffraction and photoluminescence (PL) measurements. The integrated PL intensity at 77 K drastically decreased as N composition was increased, but we found no clear correlation between the density or volume of vacancy defects and optical properties, and the S parameters were nearly constant at a value of {approx}0.516 in all Ga{sub 1-y}In{sub y}N{sub x}As{sub 1-x} films grown by our H-MBE technique.

  3. Structure and diffusion of small Ag and Au clusters on the regular MgO (100) surface

    NASA Astrophysics Data System (ADS)

    Barcaro, G.; Fortunelli, A.

    2007-02-01

    The lowest energy structures and the diffusion energy barriers of small MN (N = 1 4) Ag and Au clusters absorbed on the regular MgO (100) surface are investigated via density-functional (DF) calculations, using two different xc-functionals (PBE and LDA). In agreement with previous work, it is found that the lowest-energy structures of Ag and Au clusters in this size-range exhibit a strong 'metal-on-top' effect, by which the clusters are absorbed atop oxygen ions in a linear (dimer) or planar (trimer and tetramer) configuration perpendicular to the surface. The corresponding diffusion mechanisms range from monomer hopping, to dimer leapfrog (Ag2) or hopping (Au2), trimer walking, tetramer walking (Ag4) or rocking and rolling (Au4), exhibiting interesting differences between Ag and Au. An analysis of the corresponding energy barriers shows that trimers can diffuse at least as fast as monomers, while tetramers and (especially in the case of gold) dimers present somewhat higher barriers, but are anyway expected to be mobile on the surface at the temperatures of molecular beam epitaxy (MBE) experiments. The calculated PBE diffusion energy barriers compare reasonably well with the values extracted from the analysis of recent MBE experimental data, with the LDA predicting slightly higher barriers in the case of gold.

  4. Estimating sunshine duration from other climatic data by artificial neural network for ET0 estimation in an arid environment

    NASA Astrophysics Data System (ADS)

    Rahimikhoob, Ali

    2014-10-01

    Sunshine duration data are desirable for calculating daily solar radiation ( R s) and subsequent reference evapotranspiration (ET0) using the Penman-Monteith (PM) method. In the absence of measured R s data, the Ångström equation has been recommended by the Food and Agriculture Organization (FAO) of the United Nations. This equation requires actual sunshine duration that is not commonly observed at many weather stations. This paper examines the potential for the use of artificial neural networks (ANNs) to estimate sunshine duration based on air temperature and humidity data under arid environment. This is important because these data are commonly available parameters. The impact of the estimated sunshine duration on estimation of R s and ET0 was also conducted. The four weather stations selected for this study are located in Sistan and Baluchestan Province (southeast of Iran). The study demonstrated that modelling of sunshine duration through the use of ANN technique made acceptable estimates. Models were compared using the determination coefficient ( R 2), the root mean square error (RMSE) and the mean bias error (MBE). Average R 2, RMSE and MBE for the comparison between measured and estimated sunshine duration were calculated resulting 0.81, 6.3 % and 0.1 %, respectively. Our analyses also demonstrate that the difference between the measured and estimated sunshine duration has less effect on the estimated R s and ET0 by using Ångström and FAO-PM equations, respectively.

  5. Optimization and temperature dependence characteristics of low temperature In{sub 0.3}Ga{sub 0.7}As and In{sub 0.53}Ga{sub 0.47}As-In{sub 0.52}Al{sub 0.48}As semiconductor terahertz photoconductors

    SciTech Connect

    Kostakis, I.; Missous, M.

    2013-09-15

    Recently, detailed characterisation of materials and evaluation of devices based on low temperature (LT) grown InGaAs-InAlAs and GaAs-based terahertz (THZ) photoconductors using the Molecular Beam Epitaxy (MBE) technique have been reported by our group. In this work, the characterisation is extended in order to study the growth reproducibility of the photoconductors and the temperature dependence of their transport properties. We show that the structural, optical and transport characteristics of a photoconductor can be optimised by growing the same structure under the same growing conditions but in different MBE systems. The Hall Effect measurements over the temperature range of 100 K–400 K revealed temperature independency of the mobility within a wide range, in which the concentration is changing with the temperature. The majority of carriers are found to be electrons even in the case of Be doped samples, which is attributed to the large density of excess As anti-site atoms. The transport properties of low temperature grown materials are presented for the first time and the behaviour is found to be different to those of conventional materials, which are grown under normal growth conditions.

  6. Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy.

    PubMed

    Griffiths, I J; Cherns, D; Albert, S; Bengoechea-Encabo, A; Angel Sanchez, M; Calleja, E; Schimpke, T; Strassburg, M

    2016-05-01

    3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine structure of the N K-edge shows a clear difference allowing the mapping of the phases to take place. GaN layers grown for light emitting devices sometimes have cubic inclusions in the normally hexagonal wurtzite structures, which can influence the device electronic properties. Differences in the fine structure of the N K-edge between cubic and hexagonal material in electron energy loss spectra are used to map cubic and hexagonal regions in a GaN/InGaN microcolumnar device. The method of mapping is explained, and the factors limiting spatial resolution are discussed.

  7. Expanding the chemical diversity of natural esters by engineering a polyketide-derived pathway into Escherichia coli.

    PubMed

    Menendez-Bravo, Simón; Comba, Santiago; Sabatini, Martín; Arabolaza, Ana; Gramajo, Hugo

    2014-07-01

    Microbial fatty acid (FA)-derived molecules have emerged as promising alternatives to petroleum-based chemicals for reducing dependence on fossil hydrocarbons. However, native FA biosynthetic pathways often yield limited structural diversity, and therefore restricted physicochemical properties, of the end products by providing only a limited variety of usually linear hydrocarbons. Here we have engineered into Escherichia coli a mycocerosic polyketide synthase-based biosynthetic pathway from Mycobacterium tuberculosis and redefined its biological role towards the production of multi-methyl-branched-esters (MBEs) with novel chemical structures. Expression of FadD28, Mas and PapA5 enzymes enabled the biosynthesis of multi-methyl-branched-FA and their further esterification to an alcohol. The high substrate tolerance of these enzymes towards different FA and alcohol moieties resulted in the biosynthesis of a broad range of MBE. Further metabolic engineering of the MBE producer strain coupled this system to long-chain-alcohol biosynthetic pathways resulting in de novo production of branched wax esters following addition of only propionate. PMID:24831705

  8. Insights from the study of high-temperature interface superconductivity.

    PubMed

    Pereiro, J; Bollinger, A T; Logvenov, G; Gozar, A; Panagopoulos, C; Bozović, I

    2012-10-28

    A brief overview is given of the studies of high-temperature interface superconductivity based on atomic-layer-by-layer molecular beam epitaxy (ALL-MBE). A number of difficult materials science and physics questions have been tackled, frequently at the expense of some technical tour de force, and sometimes even by introducing new techniques. ALL-MBE is especially suitable to address questions related to surface and interface physics. Using this technique, it has been demonstrated that high-temperature superconductivity can occur in a single copper oxide layer-the thinnest superconductor known. It has been shown that interface superconductivity in cuprates is a genuine electronic effect-it arises from charge transfer (electron depletion and accumulation) across the interface driven by the difference in chemical potentials rather than from cation diffusion and mixing. We have also understood the nature of the superconductor-insulator phase transition as a function of doping. However, a few important questions, such as the mechanism of interfacial enhancement of the critical temperature, are still outstanding. PMID:22987034

  9. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kaun, Stephen W.; Mazumder, Baishakhi; Fireman, Micha N.; Kyle, Erin C. H.; Mishra, Umesh K.; Speck, James S.

    2015-05-01

    When grown at a high temperature (820 °C) by ammonia-based molecular beam epitaxy (NH3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN mole fraction (∼0.15), as identified by atom probe tomography in a previous study (Mazumder et al 2013 Appl. Phys. Lett. 102 111603). In the study presented here, growth at low temperature (<740 °C) by NH3-MBE yielded metal-polar AlN layers that were essentially pure at the alloy level. The improved purity of the AlN layers grown at low temperature was correlated to a dramatic increase in the sheet density of the two-dimensional electron gas (2DEG) at the AlN/GaN heterointerface. Through application of an In surfactant, metal-polar AlN(3.5 nm)/GaN and AlGaN/AlN(2.5 nm)/GaN heterostructures grown at low temperature yielded low 2DEG sheet resistances of 177 and 285 Ω/□, respectively.

  10. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  11. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

    SciTech Connect

    Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.; Ramirez-Lopez, M.; Martinez-Velis, I.; Lopez-Lopez, M.; Escobosa-Echavarria, A.

    2013-06-07

    InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.

  12. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    SciTech Connect

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki; Hai, Pham Nam

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  13. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    PubMed Central

    2011-01-01

    We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi. PMID:21711618

  14. Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys

    NASA Astrophysics Data System (ADS)

    Tung, Y.; Chiang, Y. F.; Chong, C. W.; Deng, Z. X.; Chen, Y. C.; Huang, J. C. A.; Cheng, C.-M.; Pi, T.-W.; Tsuei, K.-D.; Li, Z.; Qiu, H.

    2016-02-01

    We report a systematic study on the structural and electronic properties of Bi2Te3-xSex topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi2Se3 to Bi2Te3 was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi2Te3-xSex films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi2Te3-xSex with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi2Te3-xSex thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.

  15. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  16. GaInAsSb materials for thermophotovoltaics

    SciTech Connect

    Wang, C.A.; Turner, G.W.; Manfra, M.J.; Choi, H.K.; Spears, D.L.

    1996-12-01

    Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup 15} cm{sup {minus}3} and hole mobility {approximately}450 to 580 cm{sup 2}/V-s for OMVPE-grown layers, p- and n-type doping is reported for layers grown with either technique. The ideality factor of diode structures is {approximately}2 for both techniques.

  17. Growth condition dependence of photoluminescence polarization in (100) GaAs/AlGaAs quantum wells at room temperature

    SciTech Connect

    Iba, Satoshi; Saito, Hidekazu; Yuasa, Shinji; Watanabe, Ken; Ohno, Yuzo

    2015-08-28

    We conducted systematic measurements on the carrier lifetime (τ{sub c}), spin relaxation time (τ{sub s}), and circular polarization of photoluminescence (P{sub circ}) in (100) GaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy (MBE). The τ{sub c} values are strongly affected by MBE growth conditions (0.4–9 ns), whereas the τ{sub s} are almost constant at about 0.13 ns. The result suggests that spin detection efficiency [τ{sub s}/(τ{sub c} + τ{sub s})], which is expected to be proportional to a steady-state P{sub circ}, is largely dependent on growth condition. We confirmed that the P{sub circ} has similar dependence on growth condition to those of τ{sub s}/(τ{sub c} + τ{sub s}) values. The study thus indicates that choosing the appropriate growth condition of the QW is indispensable for obtaining a high P{sub circ} from a spin-polarized light-emitting diode (spin-LED)

  18. Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications.

    PubMed

    Tonkikh, A A; Voloshina, E N; Werner, P; Blumtritt, H; Senkovskiy, B; Güntherodt, G; Parkin, S S P; Dedkov, Yu S

    2016-03-24

    Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.

  19. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  20. Heavy ion fusion accelerator research (HIFAR) half-year report: October 1, 1986-March 31, 1987

    SciTech Connect

    Not Available

    1987-04-01

    For this report we have collected the papers presented by the HIFAR group at the IEEE Particle Accelerator Conference held in Washington, DC, on March 16-19, 1987, which essentially coincides with the end of the reporting period. In addition, we report on research to determine the cause of the failures of Re-X insulator that are used as the high-voltage feed-through for the electrostatic quadrupoles on MBE-4. This report contains papers on the following topics: LBL multiple beam experiments, pulsers for the induction linac experiment (MBE-4), HIF insulator failure, experimental measurement of emittance growth in mismatched space-charge dominated beams, the effect of nonlinear forces on coherently oscillating space-charge dominated beams, space-charge effects in a bending magnet system, transverse combining of nonrelativistic beams in a multiple beam induction linac, comparison of electric and magnetic quadrupole focusing for the low energy end of an induction-linac-ICF driver. Eight individual papers have been indexed separately. (LSP)

  1. A general model for estimation of daily global solar radiation using air temperatures and site geographic parameters in Southwest China

    NASA Astrophysics Data System (ADS)

    Li, Mao-Fen; Fan, Li; Liu, Hong-Bin; Guo, Peng-Tao; Wu, Wei

    2013-01-01

    Estimation of daily global solar radiation (Rs) from routinely measured temperature data has been widely developed and used in many different areas of the world. However, many of them are site specific. It is assumed that a general model for estimating daily Rs using temperature variables and geographical parameters could be achieved within a climatic region. This paper made an attempt to develop a general model to estimate daily Rs using routinely measured temperature data (maximum (Tmax, °C) and minimum (Tmin, °C) temperatures) and site geographical parameters (latitude (La, °N), longitude (Ld, °E) and altitude (Alt, m)) for Guizhou and Sichuan basin of southwest China, which was classified into the hot summer and cold winter climate zone. Comparison analysis was carried out through statistics indicators such as root mean squared error of percentage (RMSE%), modeling efficiency (ME), coefficient of residual mass (CRM) and mean bias error (MBE). Site-dependent daily Rs estimating models were calibrated and validated using long-term observed weather data. A general formula was then obtained from site geographical parameters and the better fit site-dependent models with mean RMSE% of 38.68%, mean MBE of 0.381 MJ m-2 d-1, mean CRM of 0.04 and mean ME value of 0.713.

  2. Statistical multiple diffuse scattering from rough surfaces in RHEED — beyond the distorted-wave Born approximation

    NASA Astrophysics Data System (ADS)

    Wang, Z. L.

    1996-10-01

    In reflection high-energy electron diffraction (RHEED) of growing surfaces in molecular beam epitaxy (MBE), diffuse scattering is generated by atom vibrations, point vacancies and growth islands (or surface roughness). Most of the existing RHEED theories have been developed under the first-order diffuse scattering approximation, and thus they are restricted for surfaces whose roughness is relatively low. In fact, crystal surfaces grown by MBE are usually rough; the change of surface coverage from 0 to 1 monolayer accounts for the observed RHEED oscillation. In this paper, a formal dynamical theory of RHEED has been developed to calculate the diffuse scattering produced by both atom vibrations and point vacancies at surfaces. The theory is aimed at recovering the multiple diffuse scattering that has been dropped by the distorted-wave Born approximation (DWBA). With the inclusion of a complex potential in the dynamical calculation, a rigorous proof is given to show that the high-order diffuse scattering terms are recovered in the calculation using the equation originally derived under the DWBA. This conclusion establishes the basis for expanding the RHEED theories developed under the first-order diffuse scattering to cases where the degree of surface roughness is high, allowing dynamical calculation of RHEED rocking curves for any growing surface. The statistical time and structure averages over the distorted crystal potential are evaluated analytically before numerical calculation. The dynamic form factor is calculated with consideration of anisotropic surface atom vibration and point vacancies at a growing surface.

  3. Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system

    NASA Astrophysics Data System (ADS)

    Rutkowski, M. M.; McNicholas, K. M.; Zeng, Zhaoquan; Brillson, L. J.

    2013-06-01

    We designed a mechanism and the accompanying sample holders to transfer between a VEECO 930 oxide molecular beam epitaxy (MBE) and a PHI Versa Probe X-ray photoemission spectroscopy (XPS) chamber within a multiple station growth, processing, and analysis system through ultrahigh vacuum (UHV). The mechanism consists of four parts: (1) a platen compatible with the MBE growth stage, (2) a platen compatible with the XPS analysis stage, (3) a sample coupon that is transferred between the two platens, and (4) the accompanying UHV transfer line. The mechanism offers a robust design that enables transfer back and forth between the growth chamber and the analysis chamber, and yet is flexible enough to allow transfer between standard sample holders for thin film growth and masked sample holders for making electrical contacts and Schottky junctions, all without breaking vacuum. We used this mechanism to transfer a barium strontium titanate thin film into the XPS analysis chamber and performed XPS measurements before and after exposing the sample to the air. After air exposure, a thin overlayer of carbon was found to form and a significant shift (˜1 eV) in the core level binding energies was observed.

  4. Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

    NASA Astrophysics Data System (ADS)

    Richter, Wolfgang

    2007-06-01

    In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ("alchemy") because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.

  5. Growth of single-crystal Al layers on GaAs and Si substrates for microwave superconducting resonators

    NASA Astrophysics Data System (ADS)

    Tournet, J.; Gosselink, D.; Jaikissoon, M.; Miao, G.-X.; Langenberg, D.; Mariantoni, M.; Wasilewski, Zr

    Thin Al layers on dielectrics are essential building blocks of circuits used in the quest for scalable quantum computing systems. While molecular beam epitaxy (MBE) has been shown to produce the highest quality Al layers, further reduction of losses in superconducting resonators fabricated from them is highly desirable. Defects at the Al-substrate interface are likely the key source of losses. Here we report on the optimization of MBE growth of Al layers on GaAs and Si substrates. Si surfaces were prepared by in-situ high temperature substrate annealing. For GaAs, defects typically remaining on the substrate surfaces after oxide desorption were overgrown with GaAs or GaAs/AlAs superlattice buffer layers. Such surface preparation steps were followed by cooling process to below 0°C, precisely controlled to obtain targeted surface reconstructions. Deposition of 110 nm Al layers was done at subzero temperatures and monitored with RHEED at several azimuths simultaneously. The resulting layers were characterized by HRXRD, AFM and Nomarski. Single crystal, near-atomically smooth layers of Al(110) were demonstrated on GaAs(001)-2x4 surface whereas Al(111) of comparable quality was formed on Si(111)-1x1 and 7x7 surfaces.

  6. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    PubMed

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  7. Heavy ion fusion half-year report, October 1, 1983-March 31, 1984

    SciTech Connect

    Not Available

    1984-04-01

    Results from the Single Beam Transport Experiment (SBTE) showed that stable beam transport in a 41-period AG lattice with single-particle phase advance per period, sigma/sub 0/ + 60/sup 0/, was possible with space-charge forces large enough to depress the phase-advance to sigma = 12/sup 0/. We have since extended that result and have shown that depression from sigma/sub 0/ = 60/sup 0/ to sigma = 8/sup 0/ is still stable. Measurements of the Cs/sup +/ ion beam attenuation in the SBTE at different gas pressures, taken together with the different lattice acceptances for singly and doubly-charged ions, have allowed us to measure both the electron pick-up and electron cross-sections for Cs/sup +/ on nitrogen at 160 keV. A large effort is under way to arrive at a conceptual reference design for the Multiple Beam Experiment (MBE), so that final engineering design and prototyping can begin as soon as possible. The MBE design process has stimulated many detailed questions for the theory group and several important results have ensued. For instance, on the question of what magnitude of sextupole component could be tolerated in the lenses, computer simulation showed that, for a space-charge-dominated beam, a significant sextupole term had essentially no effect if the beam remained on axis, but led to intolerable emittance growth for the practical case of an off-axis beam.

  8. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  9. Features of molecular beam epitaxy of the GaN (0001) and GaN (0001-bar) layers with the use of different methods of activation of nitrogen

    SciTech Connect

    Mizerov, A. M. Jmerik, V. N.; Kaibyshev, V. K.; Komissarova, T. A.; Masalov, S. A.; Ivanov, S. V.

    2009-08-15

    The results of comparative studies of the growth kinetics of the GaN layers of different polarity during ammonia molecular beam epitaxy and plasma-assisted molecular beam epitaxy (PA MBE) of nitrogen with the use of sapphire substrates and GaN(0001-bar)/c-Al{sub 2}O{sub 3} templates grown by gas-phase epitaxy from metalorganic compounds are presented. The possibility is shown of obtaining the GaN layers with an atomically smooth surface during molecular beam epitaxy with plasma activation of nitrogen. For this purpose, it is suggested to carry out the growth in conditions enriched with metal near the mode of formation of the Ga drops at a temperature close to the decomposition temperature of GaN (TS {approx} 760 deg. C). The conclusion is made that an increase in the growth temperature positively affects the structural, optical, and electrical properties of the GaN (0001-bar) layers. A high quality of the GaN (0001) films grown by the PA MBE method at a low temperature of {approx}700 deg. C on the GaN/c-Al{sub 2}O{sub 3} templates is shown.

  10. Alpha particle detection with GaN Schottky diodes

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Kozhukhova, E. A.; Gazizov, I. M.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; Korulin, A. V.; Zalyetin, V. M.; Pearton, S. J.; Lee, I.-H.; Dabiran, A. M.; Chow, P. P.

    2009-11-15

    Ni/GaN Schottky diode radiation detectors were fabricated on 3-mum-thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-mum-thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was <10{sup -9} A for bias voltages necessary for detector operation, with the level of background donor doping of <10{sup 15} cm{sup -3}. With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for alpha-particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly E{sub c}-0.6 eV traps, increased in MBE grown films.

  11. Development of sediment load estimation models by using artificial neural networking techniques.

    PubMed

    Hassan, Muhammad; Ali Shamim, M; Sikandar, Ali; Mehmood, Imran; Ahmed, Imtiaz; Ashiq, Syed Zishan; Khitab, Anwar

    2015-11-01

    This study aims at the development of an artificial neural network-based model for the estimation of weekly sediment load at a catchment located in northern part of Pakistan. The adopted methodology has been based upon antecedent sediment conditions, discharge, and temperature information. Model input and data length selection was carried out using a novel mathematical tool, Gamma test. Model training was carried out by using three popular algorithms namely Broyden-Fletcher-Goldfarb-Shanno (BFGS), back propagation (BP), and local linear regression (LLR) using forward selection of input variables. Evaluation of the best model was carried out on the basis of basic statistical parameters namely R-square, root mean squared error (RMSE), and mean biased error (MBE). Results indicated that BFGS-based ANN model outperformed all other models with significantly low values of RMSE and MBE. A strong correlation was also found between the observed and estimated sediment load values for the same model as the value of Nash-Sutcliffe model efficiency coefficient (R-square) was found to be quite high as well.

  12. Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V.; Drozdov, M. N.; Murel, A. V.; Shaleev, M. V.; Novikov, A. V.; Zakharov, N. D.

    2011-06-01

    An original approach to selective doping of Si by antimony (Sb) in molecular beam epitaxy (MBE) is proposed and verified experimentally. This approach is based on controllable utilization of the effect of Sb segregation. In particular, the sharp dependence of Sb segregation on growth temperature in the range of 300-550 deg. C is exploited. The growth temperature variations between the kinetically limited and maximum segregation regimes are suggested to be utilized in order to obtain selectively doped structures with abrupt doping profiles. It is demonstrated that the proposed technique allows formation of selectively doped Si:Sb layers, including delta ({delta}-)doped layers in which Sb concentrations can be varied from 5 x 10{sup 15} to 10{sup 20} cm{sup -3}. The obtained doped structures are shown to have a high crystalline quality and the short-term growth interruptions, which are needed to change the substrate temperature, do not lead to any significant accumulation of background impurities in grown samples. Realization of the proposed approach requires neither too low (<300 deg. C), nor too high (>600 deg. C) growth temperatures or any special equipment for the MBE machines.

  13. Further investigation of the target resistance penetration parameter Rt

    NASA Astrophysics Data System (ADS)

    Partom, Y.; Anderson, C. E.; Orphal, D. L.

    2000-04-01

    The quasi steady-state penetration of long rods into semi-infinite targets has been described by the modified Bernoulli equation (MBE) 1/2 ρp(V-U)2+Yp=1/2 ρtU2+Rt, where Rt is a material dependent parameter corresponding to target resistance to penetration. Rosenberg and Dekel (1994) investigated the dependence of Rt on target strength Yt and impact velocity V. They found an Rt(Yt) dependence similar to the one obtained from cavity expansion analysis, and a decreasing Rt(V) dependence. Following Rosenberg and Dekel, we use AUTODYN2D/EULER to investigate further the parameter Rt. We use a strengthless projectile (Yp=0), monitor the penetration velocity, and evaluate Rt from the MBE. We find that: 1) Rt goes to zero for Yt=0; 2) Rt increases with Yt by a somewhat weaker than linear relation; 3) Rt increases with V at high impact velocity; and 4) for low values of q=1/2 ρpV2/Yt, the turned projectile material interacts with the incoming projectile, and steady state is never reached, thus Rt is not defined.

  14. Investigation of InGaP/(In)AlGaAs/GaAs triple-junction top cells for smart stacked multijunction solar cells grown using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sugaya, Takeyoshi; Mochizuki, Toru; Makita, Kikuo; Oshima, Ryuji; Matsubara, Koji; Okano, Yoshinobu; Niki, Shigeru

    2015-08-01

    We report high-quality InGaP/(In)AlGaAs/GaAs triple-junction solar cells fabricated using solid-source molecular beam epitaxy (MBE) for the first time. The triple-junction cells can be used as top cells for smart stacked multijunction solar cells. A growth temperature of 480 °C was found to be suitable for an (In)AlGaAs second cell to obtain high-quality tunnel junctions. The properties of AlGaAs solar cells were better than those of InAlGaAs solar cells when a second cell was grown at 480 °C. The high-quality InGaP/AlGaAs/GaAs solar cell had an impressive open-circuit voltage of 3.1 V. This result indicates that high-performance InGaP/AlGaAs/GaAs triple-junction solar cells can be fabricated using solid-source MBE.

  15. Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

    NASA Astrophysics Data System (ADS)

    Zhu, Y.; Jain, N.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.; Hudait, M. K.

    2012-09-01

    The structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to "virtual substrate." Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 ± 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

  16. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering

    PubMed Central

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-01-01

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10−3 Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications. PMID:25169804

  17. Spatially explicit estimation of aboveground boreal forest biomass in the Yukon River Basin, Alaska

    USGS Publications Warehouse

    Ji, Lei; Wylie, Bruce K.; Brown, Dana R. N.; Peterson, Birgit E.; Alexander, Heather D.; Mack, Michelle C.; Rover, Jennifer R.; Waldrop, Mark P.; McFarland, Jack W.; Chen, Xuexia; Pastick, Neal J.

    2015-01-01

    Quantification of aboveground biomass (AGB) in Alaska’s boreal forest is essential to the accurate evaluation of terrestrial carbon stocks and dynamics in northern high-latitude ecosystems. Our goal was to map AGB at 30 m resolution for the boreal forest in the Yukon River Basin of Alaska using Landsat data and ground measurements. We acquired Landsat images to generate a 3-year (2008–2010) composite of top-of-atmosphere reflectance for six bands as well as the brightness temperature (BT). We constructed a multiple regression model using field-observed AGB and Landsat-derived reflectance, BT, and vegetation indices. A basin-wide boreal forest AGB map at 30 m resolution was generated by applying the regression model to the Landsat composite. The fivefold cross-validation with field measurements had a mean absolute error (MAE) of 25.7 Mg ha−1 (relative MAE 47.5%) and a mean bias error (MBE) of 4.3 Mg ha−1(relative MBE 7.9%). The boreal forest AGB product was compared with lidar-based vegetation height data; the comparison indicated that there was a significant correlation between the two data sets.

  18. Management of bleeding complications in patients with cancer on DOACs.

    PubMed

    Schulman, Sam; Shrum, Jeffrey; Majeed, Ammar

    2016-04-01

    There has been a concern that major bleeding events (MBE) on direct-acting oral anticoagulants (DOACs) will be more difficult to manage than on vitamin K antagonists. Patients with cancer and DOAC-associated bleeding may be even more of a challenge to manage. We therefore reviewed the literature on bleeding in patients with cancer on DOACs. In addition, we performed an analysis of individual patient data from 5 phase III trials on treatment with dabigatran with focus on those with cancer. In 6 randomized trials the risk of MBE in patients with cancer was similar on treatment with DOACs compared to vitamin K antagonists. Bleeding was in the majority of patients managed with supportive therapy alone. In the individual patient data analysis there were no significant differences in use of hemostatic products, transfusion of red cells, effectiveness of management, bleeding-related mortality or 30-day all-cause mortality between patients with cancer treated with dabigatran or with warfarin. Local hemostatic therapy, including resection of the cancer site was more common in patients with gastrointestinal bleeding with cancer than among those without cancer. We conclude that management of bleeding in patients with cancer and on a DOAC does not pose a greater challenge than management of bleeding in patients without cancer. PMID:27067968

  19. Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy

    PubMed Central

    CHERNS, D; ALBERT, S.; BENGOECHEA‐ENCABO, A.; ANGEL SANCHEZ, M.; CALLEJA, E.; SCHIMPKE, T.; STRASSBURG, M.

    2015-01-01

    Summary 3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine structure of the N K‐edge shows a clear difference allowing the mapping of the phases to take place. GaN layers grown for light emitting devices sometimes have cubic inclusions in the normally hexagonal wurtzite structures, which can influence the device electronic properties. Differences in the fine structure of the N K‐edge between cubic and hexagonal material in electron energy loss spectra are used to map cubic and hexagonal regions in a GaN/InGaN microcolumnar device. The method of mapping is explained, and the factors limiting spatial resolution are discussed. PMID:26366483

  20. Low-emittance uniform density Cs sup + sources for heavy ion fusion accelerators studies

    SciTech Connect

    Eylon, S.; Henestroza, E.; Garvey, T.; Johnson, R.; Chupp, W.

    1991-04-01

    Low-emittance (high-brightness) Cs{sup +} thermionic sources were developed for the heavy ion induction linac experiment MBE-4 at LBL. The MBE-4 linac accelerates four 10 mA beams from 200 ke V to 900 ke V while amplifying the current up to a factor of nine. Recent studies of the transverse beam dynamics suggested that characteristics of the injector geometry were contributing to the normalized transverse emissions growth. Phase-space and current density distribution measurements of the beam extracted from the injector revealed overfocusing of the outermost rays causing a hollow density profile. We shall report on the performance of a 5 mA scraped beam source (which eliminates the outermost beam rays in the diode) and on the design of an improved 10 mA source. The new source is based on EGUN calculations which indicated that a beam with good emissions and uniform current density could be obtained by modifying the cathode Pierce electrodes and using a spherical emitting surface. The measurements of the beam current density profile on a test stand were found to be in agreement with the numerical simulations. 3 refs., 6 figs.