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Sample records for pemercepat elektron mbe

  1. 77 FR 64519 - Magnesium Elektron; Analysis of Agreement Containing Consent Orders To Aid Public Comment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-22

    ... Magnesium Elektron; Analysis of Agreement Containing Consent Orders To Aid Public Comment AGENCY: Federal... INFORMATION section below. Write ``Magnesium Elektron, File No. 091 0094'' on your comment and file your... November 13, 2012. Write ``Magnesium Elektron, File No. 091 0094'' on your comment. Your comment...

  2. Fabrication of photovoltaic laser energy converterby MBE

    NASA Technical Reports Server (NTRS)

    Lu, Hamilton; Wang, Scott; Chan, W. S.

    1993-01-01

    A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

  3. Synthesis of MBE-4 accelerating waveforms

    SciTech Connect

    Kim, C.H.; Brady, V.O.; Fessenden, T.J.; Judd, D.L.; Laslett, L.J.

    1985-05-01

    An ion induction linac for HIF must operate near the space charge current limit along most of its length. Small errors in the voltages applied to the accelerating gaps can readily produce local unwanted beam bunching and consequent beam loss. Uncompensated space charge forces will generate current loss from longitudinal beam spreading. In the design of the MBE-4 ideal acceleration voltages were developed that assure self-similar amplifying current waveforms at each position along the accelerator. These were approximately synthesized by adding waveforms that can be obtained from realizable electrical pulsers. A code is used to study effects produced by the imperfect synthesis on the longitudinal ion dynamics and beam current waveforms in the presence of space-charge forces.

  4. 17. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING IN RELATION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING IN RELATION TO TRACKS AND PLATFORM (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  5. 42. VIEW TO SOUTHEAST; MBE BUILDING, THIRD FLOOR, CONDUCTORS' LOCKER ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    42. VIEW TO SOUTHEAST; MBE BUILDING, THIRD FLOOR, CONDUCTORS' LOCKER ROOM INTERIOR (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  6. 38. VIEW TO EAST; WEST FRONT MBE BUILDING, FIRST FLOOR ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    38. VIEW TO EAST; WEST FRONT MBE BUILDING, FIRST FLOOR ENTRANCE, DETAIL OF DOORS (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  7. 14. VIEW TO SOUTHWEST; EAST BACK AND NORTH SIDE MBE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. VIEW TO SOUTHWEST; EAST BACK AND NORTH SIDE MBE BUILDING, THIRD AND SECOND FLOORS (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  8. 18. VIEW TO NORTHWEST; EAST BACK MBE BUILDING, FIREBOXES (Dobson) ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    18. VIEW TO NORTHWEST; EAST BACK MBE BUILDING, FIREBOXES (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  9. 16. VIEW TO WEST; EAST BACK MBE BUILDING, SECOND FLOOR, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    16. VIEW TO WEST; EAST BACK MBE BUILDING, SECOND FLOOR, GARAGE ENTRANCE (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  10. 13. VIEW TO SOUTHEAST; WEST FRONT AND NORTH SIDE MBE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    13. VIEW TO SOUTHEAST; WEST FRONT AND NORTH SIDE MBE BUILDING, THIRD AND SECOND FLOORS (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  11. 20. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    20. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR ENTRANCE SHOWING DECORATIVE DETAIL (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  12. 39. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    39. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR, FRED HARVEY NEWSSTAND STOREROOM (AREA BURNED BY VANDALS) (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  13. 21. VIEW TO SOUTH; EAST FRONT MBE BUILDING, FIRST FLOOR ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    21. VIEW TO SOUTH; EAST FRONT MBE BUILDING, FIRST FLOOR AND WEST FRONT MAINTENANCE DEPARTMENT BUILDING; RAMP UNDERPASS (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  14. 15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND SECOND FLOORS; GASOLINE PUMPS CENTER (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  15. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  16. Dirac's HdCdTe semimetals grown by MBE technology

    NASA Astrophysics Data System (ADS)

    Grendysa, Jakub; Becker, Charles R.; Trzyna, Malgorzata; Wojnarowska-Nowak, Renata; Bobko, Ewa; Sheregii, Eugen M.

    2016-12-01

    Peculiarities of the MBE growth technology for the Dirac's semimetal based on the Hg1-xCdxTe alloys have been presented. Composition of layers was controlled by ToF-SIMS, FTIR measurements, and by the E1+Δ1 maximum position of optical reflectivity in visible reason. The surface morphology has by determined via atomic force and electron microscopy.

  17. 5. VIEW TO NORTH; RAMP AND WEST FRONT MBE BUILDING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    5. VIEW TO NORTH; RAMP AND WEST FRONT MBE BUILDING IN RELATION TO U.S. POST OFFICE TERMINAL ANNEX BUILDING (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  18. Let the Questions Be Your Guide: MBE as Interdisciplinary Science

    ERIC Educational Resources Information Center

    Rose, L. Todd; Daley, Samantha G.; Rose, David H.

    2011-01-01

    From its inception, the field of Mind, Brain, and Education (MBE) has been conceived as an interdisciplinary science, and with good reason: The phenomena the field aims to understand often arise from interactions among multiple factors, span levels of analysis, and are context dependent. In this article, we argue that to reach its potential as an…

  19. MBE growth and characterization of semiconductor laser coolers

    NASA Astrophysics Data System (ADS)

    Stintz, Andreas; Li, Chia-Yeh; Sheik-Bahae, Mansoor; Malloy, Kevin J.

    2009-02-01

    Laser cooling of a semiconductor has been an elusive but highly desirable goal for several years. Although it is theoretically possible, tedious and often time-consuming sample preparation, processing and testing has slowed the progress on the experimental end. The work presented here focuses on a new approach to the first step, the growth of high quality starting samples by molecular beam epitaxy (MBE). MBE is believed to have an inherent advantage over chemical vapor deposition techniques since typically material with higher purity can be grown by MBE, thereby reducing the chance for parasitic absorption and nonradiative recombinations to occur. Additionally, with MBE very precise control over interfaces is possible, where a significant portion of the non-radiative traps are usually located. The most promising material for laser cooling is the binary compound GaAs. The lattice-matched material Ga0.515In0.485P is chosen for passivating the surface as it has shown much longer radiative lifetimes in GaAs than, for example, AlxGa1-xAs. The present study focuses on growth optimization of Ga0.515In0.485P/GaAs/Ga0.515In0.485P heterostructures and the influence of growth conditions on sample suitability for laser cooling as measured by non-radiative lifetimes in GaAs. In particular, parameters such as growth temperature, group V:III overpressure, substrate orientation, doping, and interface composition on a monolayer length scale are varied and analyzed. The suitability of an optimized sample for semiconductor laser cooling is discussed.

  20. High Speed Quantum-Well Optoelectronic Devices by MBE

    DTIC Science & Technology

    1989-05-01

    energy . Measured modal gain spectra were as narrow as those of typical single QW lasers . Characteristic temperatures TO were 80 - 130 OK. Although...a high mobility 3-D electron gas. d. Low temperature laser growth The conventional wisdom for growth of lasers by MBE is that a high substrate...temperature (-700’C) is required for low-threshold current density lasers . However, high growth temperatures are undesirable for several reasons: increased

  1. Plasmonic and Superconducting Self-Assembled MBE Grown Indium Islands

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky Dean, Jr.

    Molecular beam epitaxy (MBE) grown metal has been a renewed area of interest recently in order to achieve high quality metal films or nanostructures for plasmonics. Recently MBE grown silver films have been shown to possess optical constants closer to that of intrinsic silver leading to lower losses and thus allowing for higher quality plasmonics. MBE has also been used to grow silver nanocrystals and indium droplets, or islands, for plasmonics. These self-assembled nanostructures can be grown in close proximity to quantum confined structures such as InAs/GaAs quantum dots or InGaAs/GaAs quantum wells in a single process, without post-processing and fabrication, allowing for increased plasmonic enhancement due to the improved interface between the semiconductor and plasmonic structures. In this dissertation, widely tunable plasmonic resonances of indium islands will be discussed and plasmonic enhancement results will be presented and compared to those of nanoantennas constructed from standard fabrication processes. The coupling between near-surface quantum confined structures, both fabricated and self-assembled, will be compared to the coupling in typical dielectric cavities, such as photonic crystal nanobeams. Beyond the plasmonic possibilities of indium islands, indium becomes superconducting at 3.4 K. With the proximity effect allowing for electrons in materials in contact with a superconductor to occupy a superconducting like state, allowing for the possibility for a hybrid superconductor/semiconductor optical source. The observation of superconductivity in indium islands will be presented and considerations for a superconductor/semiconductor source will be discussed.

  2. Gold-enhanced oxidation of MBE-grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    Büttner, C. C.; Zakharov, N. D.; Pippel, E.; Gösele, U.; Werner, P.

    2008-07-01

    Thermal oxidation of MBE-grown silicon nanowires with a gold droplet on their tips was investigated. Two kinds of oxidation behavior were observed: (i) enhanced axial oxidation, if there was a direct contact between the gold droplet and the nanowire, and (ii) conventional oxidation for nanowires when there was no direct contact between the gold and silicon. For a dry atmosphere, such enhanced oxidation takes place at temperatures down to 500 °C. Under a wet atmosphere, remarkable oxidation was observed even for temperatures down to 250 °C.

  3. 40 CFR 33.208 - How long does an MBE or WBE certification from EPA last?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false How long does an MBE or WBE certification from EPA last? 33.208 Section 33.208 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.208 How long does an MBE or WBE certification...

  4. 40 CFR 33.208 - How long does an MBE or WBE certification from EPA last?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 1 2011-07-01 2011-07-01 false How long does an MBE or WBE certification from EPA last? 33.208 Section 33.208 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.208 How long does an MBE or WBE certification...

  5. 40 CFR 33.207 - Can an entity reapply to EPA for MBE or WBE certification?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false Can an entity reapply to EPA for MBE or WBE certification? 33.207 Section 33.207 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.207 Can an entity reapply to EPA for MBE or...

  6. 40 CFR 33.207 - Can an entity reapply to EPA for MBE or WBE certification?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 1 2011-07-01 2011-07-01 false Can an entity reapply to EPA for MBE or WBE certification? 33.207 Section 33.207 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.207 Can an entity reapply to EPA for MBE or...

  7. Growth of Si whiskers by MBE: Mechanism and peculiarities

    NASA Astrophysics Data System (ADS)

    Zakharov, N.; Werner, P.; Sokolov, L.; Gösele, U.

    2007-03-01

    We analyzed the stress-driven mechanism of MBE Si whisker growth. It is shown that the driving force for MBE whisker growth is determined by the relaxation of elastic energy stored in the overgrown layer Ls due to gold intrusion. In this case the supersaturation is determined by the interplay between elastic stresses and surface energy. The latter is considerably decreased due to decoration of the Si surface by gold resulting in formation of thin liquid Si/Au eutectic layer. This suggests that in our case the Si supersaturation is not an independent growth parameter as it is in the chemical vapor deposition growth method. Instead it is determined by stress in the overgrown Si layer. This approach allows us to explain quite well the growth kinetic and the relationship between the radius and the length of the whiskers. The whisker growth in our case can be considered as a stress relaxation mechanism, where the stress relaxation occurs due to transition from the two-dimensional system to the three-dimensional one.

  8. MBE-4, a heavy ion multiple-beam experiment

    SciTech Connect

    Avery, R.T.; Chavis, C.S.; Fessenden, T.J.; Gough, D.E.; Henderson, T.F.; Keefe, D.; Meneghetti, J.R.; Pike, C.D.; Vanecek, D.L.; Warick, A.I.

    1985-10-01

    MBE-4, a heavy-ion multiple beam induction linac being built at LBL in FY85/86, will model many features of a much longer device. It will accelerate four spacecharge-dominated Cesium ion beams from, for example, 0.2 MeV, 5 mA/beam, 3.0 sec, 1.6 m length at injection to about0.8 MeV, 15 mA/beam, 1.0 sec, 1.1 m length at the exit. It will permit study of simultaneous focussing, acceleration, current amplification and emittance growth of multiple space-charge-dominated ion beams. Some features of this accelerator are described.

  9. MBE-4, a heavy ion multiple-beam experiment

    SciTech Connect

    Avery, R.T.; Chavis, C.S.; Fessenden, T.J.; Gough, D.E.; Henderson, T.F.; Keefe, D.; Meneghetti, J.R.; Pike, C.D.; Vanecek, D.L.; Warwick, A.I.

    1985-05-01

    MBE-4, a heavy-ion multiple beam induction linac being built at LBL in FY85/86, will model many features of a much longer device. It will accelerate four space-charge-dominated cesium ion beams from, for example, 0.2 MeV, 5 mA/beam, 3.0 ..mu..sec, 1.6 m length at injection to approx.0.8 MeV, 15 mA/beam, 1.0 ..mu..sec, 1.1 m length at the exit. It will permit study of simultaneous focussing, acceleration, current amplification and emittance growth of multiple space-charge-dominated ion beams. Some features of this accelerator are described. 11 refs., 5 figs.

  10. High-volume manufacturing of 8XXnm-10XXnm single emitter pumps by MBE growth technique

    NASA Astrophysics Data System (ADS)

    Gapontsev, V.; Moshegov, N.; Berezin, I.; Trubenko, P.; Komissarov, A.; Miftakhutdinov, D.; Berishev, I.; Strougov, N.; Chuyanov, V.; Raisky, O.; Ovtchinnikov, A.

    2014-03-01

    We report on GaAlInAs/GaAs lasers manufactured by the industry's biggest production MBE tool. This MBE reactor allows for growth on 23 three-inch diameter wafers at a time, at a cost that compares favorably with the MOCVD method. Data on chip-on-submount performance and uniformity across the entire MBE-growth area are presented and compared to the quality of material produced by smaller size production MBE tools. We also present data on performance characteristics of spatially combined fiber coupled passively cooled single emitter-based pumps. The data include performance characteristics of devices operating at ~805nm and ~975nm wavelengths when driven in CW, QCW and pulsed modes; both pumps use ~105μm core diameter fiber to launch power confined within NA<0.15.

  11. Real Time Self-Directed MBE Flux Control Incorporation In Situ Ellipsometry. Phase 1

    DTIC Science & Technology

    1992-11-01

    representation. It shows the PID controllers for the Knudsen Cells and substrate holder, the Kntdsen Cell shutters, cryo-sliroud sensor, flux beam...Shutter - "PID Control Opening.OO •= Cryo-Shroud Transient Interface Compensatot KNUDSE 6 User Interface User Interface PID controllers PID Control...S h u t te r PID controe ControlFIUR 45 MBE S Cryo-Shroude KNUS >. User Interface PID Control PID controllers Inefc FIGURE 45. MBE System Health

  12. UV and ozone cleaning of GaSb (100) surfaces prior to MBE growth

    NASA Astrophysics Data System (ADS)

    Bertru, N.; Nouaoura, M.; Bonnet, J.; Lassabatere, L.; Bedel, E.; Munoz-yague, A.

    1993-07-01

    The formation of sacrificial oxides by UV-ozone exposure on GaAs and InP is a well established procedure in the preparation of clean substrates for MBE growth. We describe a UV-ozone treatment used to prepare GaSb (100) substrates and report results obtained by Auger (Auger electron spectroscopy) which show that the quality of the so prepared substrates is excellent for MBE (molecular beam epitaxy).

  13. MBE-4: an induction linac experiment for heavy ion fusion

    SciTech Connect

    Fessenden, T.J.; Avery, R.T.; Brodzik, D.A.; Faltens, A.; Gough, D.E.; Henderson, T.F.; Judd, D.L.; Keefe, D.; Kim, C.; Laslett, L.J.

    1986-06-01

    The multiple-beam induction linac approach to a heavy ion fusion driver features continuous current amplification along the accelerator and a minimum of transverse beam manipulation from source to pellet. Current amplification and bunch length control require careful shaping of the accelerating voltages. This driver approach exploits developments in electron induction linac technology that have occurred within the last 15 years at LBL, LLNL and NBS. MBE-4 is a four beam induction linac that models much of the accelerator physics of the electrostatically focused section of a considerably longer induction accelerator. Four parallel Cs/sup +/ beams are electrostatically focussed and will be accelerated from 200 keV to approximately one MeV when the experiment is complete in the spring of 1987. The current in each of the four beams will increase from 10 to 40 mA due to both increase in beam speed and shortening of the bunch length. Results of experiments with the injector and first eight accelerating gaps are presented.

  14. 40 CFR 33.209 - Can EPA re-evaluate the MBE or WBE status of an entity after EPA certifies it to be an MBE or WBE?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.209 Can... 40 Protection of Environment 1 2010-07-01 2010-07-01 false Can EPA re-evaluate the MBE or...

  15. 40 CFR 33.209 - Can EPA re-evaluate the MBE or WBE status of an entity after EPA certifies it to be an MBE or WBE?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.209 Can... 40 Protection of Environment 1 2011-07-01 2011-07-01 false Can EPA re-evaluate the MBE or...

  16. MBE growth of Fe-based superconducting films

    NASA Astrophysics Data System (ADS)

    Ueda, S.; Yamagishi, T.; Takeda, S.; Agatsuma, S.; Takano, S.; Mitsuda, A.; Naito, M.

    2011-11-01

    We report MBE growth of the iron-based superconductors, Sr1-xKxFe2As2, Ba1-xKxFe2As2, and SmFeAs(O,F). In the growth of Sr1-xKxFe2As2 and Ba1-xKxFe2As2 films, the key to incorporating volatile K in films is low-temperature (300-350 °C) growth in reduced As flux. The highest Tc so far obtained are Tcon (Tcend) = 33.4K (31.0 K) and 38.3 K (35.5 K) for Sr1-xKxFe2As2 and Ba1-xKxFe2As2, respectively. In the growth of superconducting SmFeAs(O,F), we have adopted two approaches. In the first approach, we first grew F-free SmFeAsO films, and subsequently introduced F to the films via F diffusion from an overlayer of SmF3 or NdF3. In the second approach, we attempted the growth of as-grown superconducting SmFeAs(O,F) films by coevaporating Sm, SmF3, Fe, and As. In both the approaches, the growth temperature was as high as 650 °C. So far better results have been obtained by the first F diffusion method. The films prepared by F diffusion showed Tcon (Tcend) = 52 K (48.6 K) whereas the as-grown films showed Tcon = 47 K but with a long transition tail.

  17. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... attributable to the MBE or WBE. If an MBE's or WBE's risk of loss, control or management responsibilities is... participation are calculated as a percentage of total financial assistance agreement project procurement costs... agreements that capitalize revolving loan programs, the total amount is the total procurement dollars in...

  18. Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

    NASA Astrophysics Data System (ADS)

    Hirama, Kazuyuki; Taniyasu, Yoshitaka; Karimoto, Shin-ichi; Yamamoto, Hideki; Kumakura, Kazuhide

    2017-03-01

    Cubic boron nitride (c-BN) films were grown on diamond (001) substrates by a new ion-beam-assisted molecular-beam-epitaxy (MBE) method with the irradiation of Ar+ ions and atomic nitrogen radicals (N*). From X-ray diffraction and cross-sectional transmission electron microscopy images, we confirmed the heteroepitaxial growth of single-domain c-BN(001) films on the diamond (001) substrates. Additionally, we revealed the growth phase diagram of BN films in the ion-beam-assisted MBE. This diagram indicates that the flux intensity of Ar+ ions should be higher than that of boron atoms for epitaxial c-BN growth.

  19. Minority Business Enterprise/Women's Business Enterprise (MBE/WBE) overview

    EPA Pesticide Factsheets

    The data base allows Minority Business Enterprise/Women's Business Enterprise (MBE/WBE) Coordinators to input fair share goals negotiated by EPA and the recipient. This system also provides to all users the ability to see recipient fair share goals.

  20. New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

    NASA Technical Reports Server (NTRS)

    1988-01-01

    A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

  1. Growth of III-V films by control of MBE growth front stoichiometry

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.

  2. Recent progress in MBE grown HgCdTe materials and devices at UWA

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  3. Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

    NASA Astrophysics Data System (ADS)

    Ito, Tomonori; Akiyama, Toru; Nakamura, Kohji

    2009-01-01

    Phase diagrams of GaAs and GaN surfaces are systematically investigated by using our ab initio-based approach in conjunction with molecular beam epitaxy (MBE). The phase diagrams are obtained as a function of growth parameters such as temperature and beam equivalent pressure (BEP). The versatility of our approach is exemplified by the phase diagram calculations for GaAs(0 0 1) surfaces, where the stable phases and those phase boundaries are successfully determined as functions of temperature and As 2 and As 4 BEPs. The initial growth processes are clarified by the phase diagram calculations for GaAs(1 1 1)B-(2×2). The calculated results demonstrate that the As-trimer desorption on the GaAs(1 1 1)B-(2×2) with Ga adatoms occurs beyond 500-700 K while the desorption without Ga adatoms does beyond 800-1000 K. This self-surfactant effect induced by Ga adsorption crucially affects the initial growth of GaAs on the GaAs(1 1 1)B-(2×2). Furthermore, the phase diagram calculations for GaN(0 0 0 1) suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1×1) to the (2×2)-Ga via newly found (1×1) and vice versa. On the basis of this finding, the possibility of ghost island formation during MBE growth is discussed.

  4. Morphological and optical properties of titanyl phthalocyanine films deposited by supersonic molecular beam epitaxy (SuMBE)

    NASA Astrophysics Data System (ADS)

    Walzer, Karsten; Toccoli, Tullio; Pallaoro, Alessia; Verucchi, Roberto; Fritz, Torsten; Leo, Karl; Boschetti, Andrea; Iannotta, Salvatore

    2004-12-01

    We studied the growth and properties of titanyl phthalocyanine (TiOPc) thin films made by supersonic molecular beam epitaxy (SuMBE). Interesting differences in the growth properties on amorphous (quartz) and crystalline (mica) substrates were found, indicating that SuMBE gives rise to an epitaxy of disc-like organic molecules on crystalline substrates. The combined control of the kinetic energy of the molecules in the supersonic beam specific to SuMBE and of the substrate temperature during deposition are the key parameters used to determine the final properties of the films. We show that SuMBE is a well-suited epitaxy method for the deposition of relatively large organic molecules, leading to layers of thin organic (single-)crystals with lateral dimensions in the micrometer range. By SuMBE we can control the growth of different polymorphs of TiOPc. We found and studied two ways to produce films of red and infrared absorbing phase II TiOPc, which is of interest for applications in organic solar cells.

  5. Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106 cm2/V s in AlGaAs/GaAs quantum wells grown by MBE

    NASA Astrophysics Data System (ADS)

    Gardner, Geoffrey C.; Fallahi, Saeed; Watson, John D.; Manfra, Michael J.

    2016-05-01

    We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility μ in excess of 35×106 cm2/V s at density n=3.0×1011/cm2 and μ=18×106 cm2/V s at n=1.1×1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting μ<40×106 cm2/V s. We describe strategies to overcome this limitation.

  6. MBE based HgCdTe APDs and 3D LADAR sensors

    NASA Astrophysics Data System (ADS)

    Jack, Michael; Asbrock, Jim; Bailey, Steven; Baley, Diane; Chapman, George; Crawford, Gina; Drafahl, Betsy; Herrin, Eileen; Kvaas, Robert; McKeag, William; Randall, Valerie; De Lyon, Terry; Hunter, Andy; Jensen, John; Roberts, Tom; Trotta, Patrick; Cook, T. Dean

    2007-04-01

    Raytheon is developing HgCdTe APD arrays and sensor chip assemblies (SCAs) for scanning and staring LADAR systems. The nonlinear characteristics of APDs operating in moderate gain mode place severe requirements on layer thickness and doping uniformity as well as defect density. MBE based HgCdTe APD arrays, engineered for high performance, meet the stringent requirements of low defects, excellent uniformity and reproducibility. In situ controls for alloy composition and substrate temperature have been implemented at HRL, LLC and Raytheon Vision Systems and enable consistent run to run results. The novel epitaxial designed using separate absorption-multiplication (SAM) architectures enables the realization of the unique advantages of HgCdTe including: tunable wavelength, low-noise, high-fill factor, low-crosstalk, and ambient operation. Focal planes built by integrating MBE detectors arrays processed in a 2 x 128 format have been integrated with 2 x 128 scanning ROIC designed. The ROIC reports both range and intensity and can detect multiple laser returns with each pixel autonomously reporting the return. FPAs show exceptionally good bias uniformity <1% at an average gain of 10. Recent breakthrough in device design has resulted in APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidth. 3D LADAR sensors utilizing these FPAs have been integrated and demonstrated both at Raytheon Missile Systems and Naval Air Warfare Center Weapons Division at China Lake. Excellent spatial and range resolution has been achieved with 3D imagery demonstrated both at short range and long range. Ongoing development under an Air Force Sponsored MANTECH program of high performance HgCdTe MBE APDs grown on large silicon wafers promise significant FPA cost reduction both by increasing the number of arrays on a given wafer and enabling automated processing.

  7. Strong nonlinear optical enhancement in MBE-grown Bi 1-xSb x

    NASA Astrophysics Data System (ADS)

    Youngdale, E. R.; Meyer, J. R.; Hoffman, C. A.; Bartoli, F. J.; Partin, D. L.; Thrush, C. M.; Heremans, J. P.

    1991-05-01

    We report an experimental study of the linear and nonlinear optical properties of Bi 1-xSb x alloy layers grown by MBE. Non-degenerate four-wave mixing experiments at CO 2 laser wavelengths yield a large third-order nonlinear susceptibility (χ (3)≈3.5 × 10 -4 esu). Furthermore, due to the high reflectivity of the Bi 1-xSb x films at both the air and substrate interfaces, the etalon formed can enhance the nonlinear optical signal by over an order of magnitude.

  8. MBE and ALD grown High k Dielectrics Gate Stacks on GaN

    NASA Astrophysics Data System (ADS)

    Chang, Y. C.; Lee, K. Y.; Lee, W. C.; Lin, T. D.; Lee, Y. J.; Huang, M. L.; Hong, M.; Kwo, J.; Wang, Y. H.

    2007-03-01

    III-nitride compound semiconductors are attractive for high-temperature and high-power MOSFET applications due to their intrinsic properties of wide band gap, high breakdown field, and high saturation velocity under high fields. In this work GaN-based high k MOS diodes were fabricated using MBE-grown Ga2O3(Gd2O3), MBE-grown HfO2 and ALD-grown HfO2 as the gate dielectrics with dielectric constants of 14.7, 17.4 and 16.5, respectively. All MOS diodes exhibited low leakage (<10-6 A/cm^2 at Vfb+1) and well behaved capacitance-voltage curves with a low interfacial density of states of ˜10^11 cm-2eV-1. Energy-band diagrams of the MOS structures have been determined by extracting valance-band offset (δEV) from HR-XPS and with the bandgaps of the oxides. For example, the ALD-grown HfO2-GaN at the interfaces gave approximately δEC and δEV of 1.2 eV and 1.1 eV, respectively.

  9. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2016-07-12

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  10. Final report on LDRD Project: In situ determination of composition and strain during MBE

    SciTech Connect

    Chason, E.; Floro, J.A.; Reno, J.; Klem, J.

    1997-02-01

    Molecular Beam Epitaxy (MBE) of semiconductor heterostructures for advanced electronic and opto-electronic devices requires precise control of the surface composition and strain. The development of advanced in situ diagnostics for real-time monitoring and process control of strain and composition would enhance the yield, reliability and process flexibility of material grown by MBE and benefit leading-edge programs in microelectronics and photonics. The authors have developed a real-time laser-based technique to measure the evolution of stress in epitaxial films during growth by monitoring the change in the wafer curvature. Research has focused on the evolution of stress during the epitaxial growth of Si{sub x}Ge{sub 1{minus}x} alloys on Si(001) substrates. Initial studies have observed the onset and kinetics of strain relaxation during the growth of heteroepitaxial layers. The technique has also been used to measure the segregation of Ge to the surface during alloy growth with monolayer sensitivity, an order of magnitude better resolution than post-growth characterization. In addition, creation of a 2-dimensional array of parallel beams allows rapid surface profiling of the film stress that can be used to monitor process uniformity.

  11. Superconducting proximity effect in MBE grown Nb-InAs junctions

    NASA Astrophysics Data System (ADS)

    Kan, Carolyn; Xue, Chi; Law, Stephanie; Eckstein, James

    2013-03-01

    Several proposals for the realization of Majorana fermions rely on excellent quality proximity coupling between a superconductor and a high-mobility semiconductor. We examine the long-range proximity coupling between MBE-grown InAs and in situ grown superconducting overlayers by fabricating transport devices, and investigate the effect of substrate choice and growth conditions on the quality of the MBE InAs. GaAs is commonly available as a high quality insulating substrate. Overcoming its lattice mismatch with InAs using GaSb and AlSb layers results in locally smooth terraced surfaces, but global spiral dislocation structures also appear and have a negative impact on the InAs mobility. Growing InAs on homoepitaxial GaSb results in improved morphology and increases the mean free path. We compare the proximity effect in devices made both ways. This material is based upon work supported by the U.S. Department of Energy, Division of Materials Sciences under Award No. DE-FG02 07ER46453, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

  12. Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

    NASA Astrophysics Data System (ADS)

    Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

    Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

  13. 40 CFR 33.407 - How long do MBE and WBE fair share objectives remain in effect?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false How long do MBE and WBE fair share objectives remain in effect? 33.407 Section 33.407 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY...

  14. Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE

    NASA Astrophysics Data System (ADS)

    Iwata, K.; Asahi, H.; Asami, K.; Kuroiwa, R.; Gonda, S.

    1998-06-01

    GaN layers are grown on amorphous fused silica glass substrates by gas source MBE using an ion removed electron cyclotron resonance (ECR) radical cell. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction measurements reveal that they are polycrystalline. However, they show a strong photoluminescence emission peak without deep level emission. The emission peak is red-shifted by about 150 meV from that of the excitonic emission peak of GaN grown on a sapphire substrate and has wide spectral half-width (˜250 meV at 77 K). The peak is not corresponding to the donor-acceptor pair (DAP) emission but is excitonic from the excitation power and temperature dependence of PL spectrum. These optical properties indicate that GaN layers grown on a glass substrate are promising for fabrication of large area and low cost light emitting devices and solar cells.

  15. Investigation of Si-substrate preparation for GaAs-on-Si MBE growth

    NASA Astrophysics Data System (ADS)

    Kayambaki, M.; Callec, R.; Constantinidis, G.; Papavassiliou, Ch.; Löchtermann, E.; Krasny, H.; Papadakis, N.; Panayotatos, P.; Georgakilas, A.

    1995-12-01

    Auger electron spectroscopy (AES) and material characterization techniques have been used to investigate different chemical treatments for the preparation of Si substrates for GaAs-on-Si molecular beam epitaxy (MBE). The need for a Si surface passivating oxide is justified and three different oxidizing solutions are compared for substrate cleanliness and oxide volatility. It is shown that the SC2 solution HCl : H 2O 2 : H 2O (1 : 1 : 6) at 75°C is an appropriate treatment for the final Si cleaning step, since it results to a very volatile oxide that can be desorbed at 750°C, without compromising Si surface cleanliness and GaAs purity. Si wafers with optimized preparation/packaging may also be used as "EPI-ready" substrates within some time after manufacturing.

  16. Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires.

    PubMed

    Sanders, Aric; Blanchard, Paul; Bertness, Kris; Brubaker, Matthew; Dodson, Christopher; Harvey, Todd; Herrero, Andrew; Rourke, Devin; Schlager, John; Sanford, Norman; Chiaramonti, Ann N; Davydov, Albert; Motayed, Abhishek; Tsvetkov, Denis

    2011-11-18

    We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescence measurements of the nanowires show the appearance of sub-bandgap features in the blue and the ultraviolet, indicating the presence of acceptors. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.

  17. The Mid-Barremian Event (MBE): the Prelude to the OAE1a

    NASA Astrophysics Data System (ADS)

    Coccioni, R.; Galeotti, S.; Sprovieri, M.

    2003-12-01

    Detailed litho-, bio- and chemostratigraphic investigations of the Hauterivian-lowermost Aptian Maiolica pelagic limestones in the Umbria-Marche sequence, allowed to identify that the Selli Level, which is the regional sedimentary expression of the OAE 1a, represents the climax of a ca. 5 myr-long cycle of black shale deposition starting at the lower/upper Barremian boundary within polarity Chronozone M3 and H. similis-H. kutznetsovae planktonic foraminiferal Zone, that is in the lowermost part of the calcareous nannofossil Zone NC 5D. This long-term cycle starts with a prominent short-term event, here named mid-Barremian Event (MBE), which is associated with several changes in the biotic and abiotic records. In particular, a comparison of the available chemo- litho-, and biostratigraphic data from the Umbria-Marche Basin, allows to recognise that the MBE is defined by: 1) a 0.5 per mil positive shift in the carbon isotope values (Hadji, 1993; unpublished data); 2) a major step in the initial evolutive radiation of planktonic foraminifera (unpublished data); 3) a major turnover in the radiolarian assemblages (Jud, 1994; O'Dogherty, 1994). The above mentioned change in carbon isotope values can be confidently correlated over the Mediterranean Tethys which is the sole area where a detailed isotopic record is available for the entire Barremian (Erba et al., 1999; Wissler et al., 2002). These lines of evidence concur to define the MBE as an outstanding event associated with large scale changes in the ocean-climate system likely related to the rapid oceanic Ontong-Java Plateau formation, which eventually led to OAE1a. Remarkably, the MBE largely predates the well known series of biotic and geochemical events occurring prior to the OAE1a and may be considered as the real turning point in the Barremian-Aptian long-term cycle of black-shale deposition and evolutionary turnovers in several fossil groups. References Erba, E., Channell, J.E.T., Claps, M., Jones, C., Larson, R

  18. High Quality Factor MBE-grown Aluminum on Silicon Planar Resonators

    NASA Astrophysics Data System (ADS)

    Megrant, Anthony; Chen, Z.; Chiaro, B.; Dunsworth, A.; Quintana, C.; Campbell, B.; Barends, R.; Chen, Y.; Fowler, A.; Hoi, I.-C.; Jeffrey, E.; Kelly, J.; Mutus, J.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T.; Palmstrom, C.; Martinis, J. M.; Cleland, A. N.

    2015-03-01

    Linear arrays of planer Xmon qubit circuits fabricated using thin aluminum films on sapphire substrates have resulted in long coherence times and high fidelity gates. Scaling up to larger circuits, including two-dimensional qubit arrays, may however benefit from building circuits on silicon instead of sapphire substrates. I will present recent tests in this direction, reporting on measurements of superconducting coplanar waveguide resonators fabricated using aluminum films deposited on silicon in a molecular beam epitaxy (MBE) system. These resonators exhibit exceptional performance, with quality factors at low temperatures and single photon excitation energies exceeding 5x106. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), through the Army Research Office Grant W911NF-09-1-0375.

  19. Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    SciTech Connect

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-15

    The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.

  20. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

    NASA Astrophysics Data System (ADS)

    Reddy, M.; Lofgreen, D. D.; Jones, K. A.; Peterson, J. M.; Radford, W. A.; Benson, J. D.; Johnson, S. M.

    2013-11-01

    HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.

  1. Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

    NASA Astrophysics Data System (ADS)

    Asahi, H.; Iwata, K.; Tampo, H.; Kuroiwa, R.; Hiroki, M.; Asami, K.; Nakamura, S.; Gonda, S.

    1999-05-01

    Polycrystalline GaN layers showing very strong photoluminescence (PL) intensities are successfully grown on amorphous fused silica (SiO 2) substrates by gas source molecular beam epitaxy (MBE) using an ion removed electron cyclotron resonance radical cell. The PL intensity is larger than that of undoped single crystalline GaN grown on sapphire by gas source MBE and is comparable to that of Si-doped single crystalline GaN grown on sapphire by metalorganic vapor-phase epitaxy at Nichia Chemical. The PL peak emission is considered to be excitonic. Undoped GaN layers grown on silica substrates exhibit n-type conduction and both n- and p-type conductions are achieved by impurity doping. These results open up the area of "Polycrystalline Semiconductor Photonics".

  2. Transcription of ColE1Ap mbeC induced by conjugative plasmids from twelve different incompatibility groups.

    PubMed Central

    Selvaratnam, S; Gealt, M A

    1993-01-01

    Although nonconjugative mobilizable plasmids require helping functions of conjugative plasmids in order to be mobilized into recipients, at least some genes from the nonconjugative plasmids may be induced to assist in the DNA transfer process. Conjugative plasmids from 12 different incompatibility groups mobilized the nonconjugative plasmid ColE1Ap between Escherichia coli strains. Introduction of any of the conjugative plasmids into the ColE1Ap-containing strain resulted in an induction of mbeC, the product of which is a component of the mobilization relaxation complex. Each of the conjugative plasmids caused protein to bind specifically to mbe promoter DNA, suggesting a direct regulatory interaction. Images PMID:8226641

  3. Impact of MBE deposition conditions on InAs/GaInSb superlattices for very long wavelength infrared detection

    NASA Astrophysics Data System (ADS)

    Brown, G. J.; Haugan, H. J.; Mahalingam, K.; Grazulis, L.; Elhamri, S.

    2015-01-01

    The objective of this work is to establish molecular beam epitaxy (MBE) growth processes that can produce high quality InAs/GaInSb superlattice (SL) materials specifically tailored for very long wavelength infrared (VLWIR) detection. To accomplish this goal, several series of MBE growth optimization studies, using a SL structure of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, were performed to refine the MBE growth process and optimize growth parameters. Experimental results demonstrated that our "slow" MBE growth process can consistently produce an energy gap near 50 meV. This is an important factor in narrow band gap SLs. However, there are other growth factors that also impact the electrical and optical properties of the SL materials. The SL layers are particularly sensitive to the anion incorporation condition formed during the surface reconstruction process. Since antisite defects are potentially responsible for the inherent residual carrier concentrations and short carrier lifetimes, the optimization of anion incorporation conditions, by manipulating anion fluxes, anion species, and deposition temperature, was systematically studied. Optimization results are reported in the context of comparative studies on the influence of the growth temperature on the crystal structural quality and surface roughness performed under a designed set of deposition conditions. The optimized SL samples produced an overall strong photoresponse signal with a relatively sharp band edge that is essential for developing VLWIR detectors. A quantitative analysis of the lattice strain, performed at the atomic scale by aberration corrected transmission electron microscopy, provided valuable information about the strain distribution at the GaInSb-on-InAs interface and in the InAs layers, which was important for optimizing the anion conditions.

  4. MOS Ge Diodes Based on High κ Gate Dielectrics Grown by MBE and ALD

    NASA Astrophysics Data System (ADS)

    Lee, Kun Yu; Lee, W. C.; Lin, T. D.; Lee, C. S.; Chang, Y. C.; Lee, Y. J.; Huang, M. L.; Wu, Y. D.; Hong, M.; Kwo, J.

    2007-03-01

    Germanium-based CMOS technology is gaining importance due to its high carrier mobility. In this work high κ gate-dielectrics, Al2O3, HfO2, Y2O3 and Ga2O3(Gd2O3) grown by MBE and ALD were investigated as passivation layers on n type Ge(100). Thermal stability of the MOS diodes was examined after various anneals. Prior to dielectric depositions surface pretreatments were applied to reduce the unwanted GeOx interfacial layer, and to improve electrical properties. Frequency dispersion of C-V curves was reduced by using a 350^oC preclean process, compared to the sample without precleaning. The leakage current density of ALD grown HfO2 (6.8nm) is 4.6×10-6 A/cm^2 with κ of 10.5. The improved CV curve was attributed to less GeOx formed at substrate and oxide interface, as confirmed by XPS analysis. However, with higher cleaning temperature over 400^oC, the CV curves showed additional inversion capacitance, possibly due to minority carriers from defect states near the interface.

  5. Growth, structural and optical characterization of MBE {ZnCdSe}/{ZnSe} quantum wells

    NASA Astrophysics Data System (ADS)

    Reisinger, T.; Lankes, S.; Kastner, M. J.; Rosenauer, A.; Franzen, F.; Meier, M.; Gebhardt, W.

    1996-02-01

    {ZnCdSe}/{ZnSe} quantum wells (QW) were grown with molecular beam epitaxy (MBE) on GaAs(001) substrates cleaned with hydrogen plasma. Reflection high-energy electron diffraction (RHEED) was used for in-situ growth control of the QW structures. A quantitative evaluation of the RHEED oscillations yields an exact value of the growth rate. Furthermore, in comparing the growth rate of the barrier and the well a reasonable estimate of the Cd content is possible. The in-situ RHEED measurements were supplemented by ex-situ HRXRD and HRTEM investigations. The latter method was found to be especially useful to evaluate the Cd-concentration profile of the QWs by digital analysis of lattice images (DALI). X-ray rocking curves of MQWs were recorded which show well-resolved satellite peaks. A comparison with simulations based on dynamical diffraction theory yields the structural parameters such as well width, barrier width and composition of the QWs. The XRD and TEM results are compared with the parameters determined by RHEED. In addition, we performed photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy for optical characterization of the samples. The PLE spectra show an interference pattern which is explained by standing polariton waves.

  6. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  7. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  8. Accelerator research on MBE-4, an experimental multi-beam induction linac

    SciTech Connect

    Meuth, H.; Fessenden, T.J.; Keefe, D.; Warwick, A.I.

    1988-06-01

    The multiple beam accelerator MBE-4 is a device for research toward a heavy ion driver for inertial confinement fusion, based on the induction linac concept. Its main goal is proof of the principle of current amplification by acceleration and controlled self-similar beam pulse compression. Into the 16-m long device four beams, each with an initial current of 10 mA are injected from a Marx-driven diode at 200 keV. The current amplification is up to nine-fold, with a final beam energy of about 800 keV in the middle of the bunch. Now that all the apparatus' accelerator sections have been completed, installed and aligned, and its unaccelerated transport properties have been studied, our experimental research has reached the crucial phase of implementing appropriate accelerator schedules that approximate self-similar current-pulse compression. These schedules are established through a close interplay of computations using a one-dimensional simulation code and a manual empirical tuning procedure. In a first approach, with a rather vigorous schedule that uses most of the accelerator modules to their voltage limits, we have determined the limits of our capability for controlled pulse compression, mainly due to waveform shaping of the driving pulse-forming networks. We shall report on these results. In the future, we will also aim for gentler schedules that would model more closely an inertial confinement fusion scenario. 8 refs., 11 figs., 1 tab.

  9. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Munuera, Carmen; Varela del Arco, Maria; Soria, Federico; Ocal, Carmen; Ruiz, Ana; Alonso, Maria

    2006-01-01

    Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 x 1 surfaces with low (<1 degree) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 x 7 vicinal substrates misoriented 4 degrees toward the View the MathML source direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.

  10. Microstructural Changes in MBE Growth of Low-Temperature Gallium Arsenide Observed by in Situ Ellipsometry

    NASA Astrophysics Data System (ADS)

    Eyink, Kurt Gerard

    1995-01-01

    An ellipsometer system has been developed for in-situ monitoring of III-V semiconductor growth using molecular beam epitaxy. Included as part of this work, a software package was developed for the calibration, acquisition, display and modeling of ellipsometry data. This calibration software addresses the arbitrary orientations of the analyzer and polarizer components that are present in the mounting of the ellipsometer on the MBE system. In addition, this package calculated the trajectory followed during the growth of a homogeneous film. The materials used in the modeling are restricted to either an isotropic material or a uniaxial material with the optic axis oriented normal to the surface. External to the real-time software package, a general scheme for the analysis of ellipsometric data was developed using MATLAB. The ellipsometer described above was utilized to reproducibly grow and monitor the growth of low temperature (LT) GaAs films in-situ. In particular the capping of GaAs(001) with As was monitored and a method was developed which could be used to characterize the growth temperature of GaAs in the vicinity of 190^circ C. This method utilizes the temperature for the formation of a thin film of As on GaAs(001). Using this technique to set the growth conditions, LT-GaAs films were grown and monitored in real-time with the ellipsometer and characterized ex-situ with X-ray diffraction (XRD) and transmission electron microscopy (TEM.) The ellipsometry data allowed for the observation of the formation of the epitaxial LT-GaAs film and a subsequent region of changing dielectric properties. These results are correlated with observation in double crystal X-ray diffraction (DXRD) and TEM analysis, showing that the refractive index can be used to indicate the composition of the LT-GaAs films and that the ellipsometer can observe the breakdown in the crystallinity of the LT-GaAs layers.

  11. HgCdTe p-on- n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth

    NASA Astrophysics Data System (ADS)

    Gravrand, O.; Ballet, Ph.; Baylet, J.; Baier, N.

    2009-08-01

    Extrinsic p-type doping during molecular-beam epitaxy (MBE) growth represents an essential generic toolbox for advanced heterostructures based on the HgCdTe material system: PiN diodes, mesa avalanche photodiodes (APD) or third-generation multispectral focal-plane arrays. Today, arsenic appears to be the best candidate to fulfill this role and our group is actively working on its incorporation during MBE growth, using an original radio frequency (RF) plasma source for arsenic. Such a cell is supposed to deliver a monatomic As flux, and as expected we observed high As electrical activation rates after annealing short-wave (SW), mid-wave (MW), and long-wave (LW) layers. At last, a couple of technological runs have been carried out in the MW range in order to validate the approach on practical devices. p-on- n focal-plane arrays (FPA) have been fabricated using a mesa delineated technology on an As-on-In doped metallurgical heterojunction layer grown on a lattice-matched CdZnTe layer (320 × 256, 30 μm pitch, 5 μm cutoff at 77 K). Observed diodes exhibit very interesting electro-optical characteristics: large shunt impedance, high quantum efficiency, and no noticeable excess noise. The resulting focal-plane arrays were observed to be very uniform, leading to high operabilities. Noise equivalent temperature difference (NETD) distributions are very similar to those observed with the As ion-implanted p-on- n technology, fabricated in our laboratory as well. In our opinion, those excellent results demonstrate the feasibility of our MBE in situ arsenic doping process. Good electrical activation rates and high-quality layers can be obtained. We believe that such an approach allows precise control of the p-doping profile in the HgCdTe layer, which is necessary for advanced structure designs.

  12. Investigation of MBE-grown high T c films by RHEED, atomic force microscopy and X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Wang, H. S.; Eissler, D.; Dietsche, W.; Fischer, A.; Ploog, K.

    1993-02-01

    Results on the preparation of the molecular beam epitaxial (MBE) growth and on structural investigations of high Tc DyBa 2Cu 3O 7- y (DBCO) superconducting thin films are presented. We prepared high quality DBCO thin films on SrTiO 3, MgO, LaAlO 3 and NdGaO 3 substrates in situ with high reproductivity. We also grew DBCO/Dy 2O 3/DBCO/SrTiO 3 multilayer structures. The structure and morphology of the films were studied by RHEED, STM, AFM, XRD and X-ray Weissenberg camera techniques.

  13. Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

    NASA Astrophysics Data System (ADS)

    Komissarova, T. A.; Lebedev, M. V.; Sorokin, S. V.; Klimko, G. V.; Sedova, I. V.; Gronin, S. V.; Komissarov, K. A.; Calvet, W.; Drozdov, M. N.; Ivanov, S. V.

    2017-04-01

    A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2 × 4)As or c(4 × 4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 106 cm‑2) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing.

  14. Fundamental investigations of CdTe deposited by MBE for applications in thin-film solar photovoltaics

    NASA Astrophysics Data System (ADS)

    Colegrove, Eric

    Model CdTe systems --both single-crystalline (sx) and poly-crystalline (px) --are investigated experimentally as a means to understand the role of competing material properties and processing steps in improving the performance of standard thin-film solar cells. Previous device optimization work is reviewed explaining the close space sublimation growth technique and ongoing analysis using scanning transmission electron microscopy. This is followed by motivation for molecular beam epitaxy (MBE) growth studies of CdTe and the results of fundamental material investigations. The results show that (a) the minority carrier lifetimes in hetero-epitaxial layers is limited by surface recombination, (b) source selection and anneals can be tuned to achieve p-type carrier density of 6x1015 cm-3, and (c) counter-intuitively, the increase in p-density is associated with increased mobility in lower crystal quality samples, suggesting the role of anneal. Finally, controlled and re-growth of px-CdTe by MBE studies are discussed with results indicating that shorter lifetimes are directly correlated with the increased surface/interface density.

  15. Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si

    NASA Astrophysics Data System (ADS)

    Ohachi, Tadashi; Yamabe, Nobuhiko; Yamamoto, Yuka; Wada, Motoi; Ariyada, Osamu

    2011-03-01

    A new spiral parallel mesh electrode (PME) is presented to control active nitrogen species in plasma-assisted molecular beam epitaxial (PA-MBE) growth of group III nitrides and their alloys. Direct flux of active nitrogen from radio frequency inductive coupled plasma (rf-ICP) discharge was able to be measured using a mesh electrode for filtering charge particles and electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode. In situ measurement of direct nitrogen atom fluxes using the spiral PME during PA-MBE growth of GaN and AlN on Si substrates is investigated. A linear rf power dependence of direct flux of active species on atoms such as nitrogen (N+N*), where N and N* were ground and excited atoms, respectively, from a rf-ICP was confirmed by the spiral PME. An indirect flux of nitrogen adsorbed (ADS) atoms (N+N*) during discharge was also monitored by the spiral PME and received influence of the wall surface of the growth chamber. ADS nitrogen atoms are able to be used for nitridation of Si surface to grow a double buffer layer (DBL) AlN/β-Si3N4/Si.

  16. MBE growth of CdTe and Hg (1-x) Cd (x) Te films and multilayer structures

    NASA Astrophysics Data System (ADS)

    Farrow, R. F. C.; Noreika, A. J.; Takei, W. J.; Wood, S.; Greggi, J.

    1985-04-01

    The MBE growth of CdTe and Hg1-xCdxTe films on InSb and CdTe substrates has been investigated. Growth conditions for high-perfection CdTe films, exactly lattice-matched to InSb substrates, have been identified. These films are ideal for substrates for Hg1-xCdxTe film growth since they are free from low-angle grain boundaries and also provide electrical isolation of the Hg1-xCdxTe film from the InSb substrate. Magnetophotoconductivity studies of abrupt n-CdTe/p-InSb heterojunctions indicate the presence of an n-type inversion layer in the InSb. This could be the basis for a new type of FET device. Conditions for growth of Hg1-xCdxTe films have been explored and films of suitable quality for LWIR device fabrication have been prepared.

  17. Thermal Stability of Ge/GeSn Nanostructures Grown by MBE on (001) Si/Ge Virtual Wafers

    NASA Astrophysics Data System (ADS)

    Sadofyev, Yu. G.; Martovitsky, V. P.; Klekovkin, A. V.; Saraikin, V. V.; Vasil'evskii, I. S.

    A stack of five metastable 200-nm-thick elastically strained GeSn epitaxial layers separated by 20-nm-thick Ge spacers was grown on (001) Si/Ge virtual substrate by MBE. The molar fraction of Sn in different layers varied from 0.005 to 0.10, increasing with the layer distance from the Ge buffer. The phase separation of the GeSn alloy during postgrowth annealing takes place along with plastic relaxation. The phase separation begins well before the completion of the plastic relaxation process. The degree of phase separation at a given annealing temperature depends strongly on the Sn content in the GeSn alloy. The Sn released from the decomposed GeSn alloy predominantly accumulates as an amorphous layer on the surface of the sample.

  18. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  19. Magnetic Field Studies Near Superconducting Transition in MBE Grown Monolayer NbSe2 on Bilayer Graphene

    NASA Astrophysics Data System (ADS)

    Onishi, Seita; Ugeda, Miguel M.; Zhang, Yi; Chen, Yi; Ojeda-Aristizabal, Claudia; Ryu, Hyejin; Mo, Sung-Kwan; Hussain, Zahid; Shen, Zhi-Xun; Crommie, Michael F.; Zettl, Alex

    Following the work by Frindt on the superconductivity of NbSe2 at reduced thicknesses, recent breakthroughs have enabled the study of bilayers and monolayers. Staley et. al., Tsen et. al., Cao et. al. and Xi et. al. have studied superconductivity in bilayers and monolayers of NbSe2 after mechanical exfoliation and encapsulation with another layered material to protect from air. In this work, we have investigated the superconductivity in monolayer NbSe2 prepared by molecular beam epitaxy growth (MBE) on bilayer graphene (BLG). The superconducting transition has an onset temperature of 1.9K, midpoint temperature of 0.65K and reaches zero resistance at 0.46K. The upper critical field perpendicular to the NbSe2 monolayer is 0.5T at 100mK. We will show the effect of magnetic fields near the superconducting transition and compare with existing theories

  20. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  1. Peculiarities of photoluminescence of vertical n +/ n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

    NASA Astrophysics Data System (ADS)

    Čerškus, Aurimas; Kundrotas, Jurgis; Sužiedėlis, Algirdas; Gradauskas, Jonas; Ašmontas, Steponas; Johannessen, Eric; Johannessen, Agne

    2015-09-01

    Vertical MBE- and MOCVD-grown structures used for microwave electronics have been studied with continuous wave and time-correlated single photon counting dynamic photoluminescence technique. The photoluminescence spectra and light emission lifetimes are used to explain the recombination mechanisms of the excited carriers. This paper presents results showing the differences in recombination characteristics of layers grown using MBE process compared with MOCVD process. One of these differences is that the PL spectrum of the MOCVD-grown layer is shifted towards the forbidden energy gap region, as well as the characteristic recombination time is longer than for the MBE-grown sample. This peculiarity can be attributed to the formation of the localised band tails in the MOCVD-grown sample. The proposed analytical model explains the differences in microwave detection properties of the samples grown by MBE and MOCVD processes.

  2. Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

    NASA Astrophysics Data System (ADS)

    Ž, A.

    Role of band potential roughness on luminescence decay time and stimulated emission in InGaN quantum wells (QWs) grown by rf plasma-assisted molecular beam epitaxy (MBE) on bulk GaN substrates was studied. A high-photoexcitation regime used ensured conditions similar to those in operating laser diodes. Standard deviation of the potential fluctuations in different thickness InGaN QWs was found to vary in the range of 13-22 meV as revealed by Monte Carlo simulation of localized exciton hopping. A negligible influence of this variation on the luminescence decay time (?700 ps) and stimulated emission threshold (?30 kW/cm2) was observed. We attribute this insensitivity to the low density of localized states (?1 × 1018 cm-3) estimated in our high-quality QWs grown by MBE, and therefore, assign extended states to be mainly responsible for the properties of highly-excited luminescence.

  3. Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH)

    DTIC Science & Technology

    2013-09-01

    Optimization of the Nonradiative Lifetime of Molecular- Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH) by P...it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6660 September 2013 Optimization of the Nonradiative ...REPORT TYPE Final 3. DATES COVERED (From - To) FY2013 4. TITLE AND SUBTITLE Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy

  4. Growth of semiconductor nanostructures by MBE for the study of electron and nuclear spin enhancement and other physical phenomena

    NASA Astrophysics Data System (ADS)

    Zhang, Qiang

    Molecular beam epitaxy (MBE) is an extremely versatile thin film technique, which can produce single-crystal layers with atomic dimensional controls and thus permit the preparation of novel structures and devices tailored to meet specific needs. Spin relaxation time ts is one of the key features in spin-related phenomena and thus of great importance for spintronics. In this work, we prepare high quality samples, mainly of CdTe epilayers, by MBE, characterize their spin relaxation dynamics, and discuss the results theoretically. First, with the goal of understanding the mechanisms of electron relaxation dynamics and nuclear spin enhancement, we focus on the growth and characterization of CdTe epilayers. By changing the shutter sequences and inserting ZnSe buffer layer, we have reproducibly grown (111) and (100) CdTe epilayers of high crystalline qualities by MBE, despite the large lattice mismatch between CdTe and GaAs substrate. Then we investigate ts for the (111) and (100) CdTe epilayers. It is found that for the (111) CdTe, spin relaxation rate t-1s is significantly enhanced and shows no temperature dependence through 130K to 300K, while t-1s for the (100) CdTe is strongly affected by the temperature. It is also found that t-1s is dependent on material quality for both (111) and (100) CdTe. We theoretically discuss the effect of strain and defect on spin relaxation time of CdTe. It is the first experimental observation of the effect of strain on t-1s in a II-VI semiconductor material. Second, the growth and characterization of ZnTe/ZnSe related type II quantum structures, or quantum dots (QDs), are also presented in this work. The PL of Zn-Se-Te related type II quantum structures show blue shifts with higher intensities of exciting laser, an indication of type II QDs. Besides being an attractive method to p-type dope wide bandgap materials, the resulting material may be a promising structure for spin enhancement properties. Third, we present the study of the

  5. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

    PubMed Central

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-01-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates. PMID:27101930

  6. A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth

    NASA Astrophysics Data System (ADS)

    Martinez, Rebecca; Tybjerg, Marius; Flint, Patrick; Fastenau, Joel; Lubyshev, Dmitri; Liu, Amy W. K.; Furlong, Mark J.

    2016-05-01

    Gallium Antimonide (GaSb) is an important Group III-V compound semiconductor which is suitable for use in the manufacture of a wide variety of optoelectronic devices such as infra-red (IR) focal plane detectors. A significant issue for the commercialisation of these products is the production of epitaxy ready GaSb, which remains a challenge for the substrate manufacturer, as the stringent demands of the MBE process, requires a high quality starting wafer. In this work large diameter GaSb crystals were grown by the Czochralski (Cz) method and wafers prepared for chemo-mechanical polishing (CMP). Innovative epi-ready treatments and novel post polish cleaning methodologies were applied. The effect of these modified finishing chemistries on substrate surface quality and the performance of epitaxially grown MBE GaSb IR detector structures were investigated. Improvements in the lowering of surface defectivity, maintaining of the surface roughness and optimisation of all flatness parameters is confirmed both pre and post MBE growth. In this paper we also discuss the influence of bulk GaSb quality on substrate surface performance through the characterisation of epitaxial structures grown on near zero etch pit density (EPD) crystals. In summary progression and development of current substrate polishing techniques has been demonstrated to deliver a consistent improved surface on GaSb wafers with a readily desorbed oxide for epitaxial growth.

  7. High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

    2005-01-01

    III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

  8. Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

    NASA Technical Reports Server (NTRS)

    Wu, Liangjin; Iyer, Shanthi; Nunna, Kalyan; Bharatan, Sudhakar; Li, Jia; Collis, Ward J.

    2005-01-01

    In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

  9. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

    NASA Astrophysics Data System (ADS)

    Jantawongrit, P.; Sanorpim, S.; Yaguchi, H.; Orihara, M.; Limsuwan, P.

    2015-08-01

    InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g=11\\bar{2}0 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. Project supported by the Thailand Center of Excellence in Physics (ThEP) and the King Mongkut's University of Technology Thonburi under The National Research University Project. One of the authors (S. Sanorpim) was supported by the National Research Council of Thailand (NRCT) and the Thai Government Stimulus Package 2 (TKK2555), under the Project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture.

  10. Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Jaime Vasquez, M.; Lennon, C. M.; Nozaki, C.; Almeida, L. A.; Pellegrino, J.; Arias, J.; Taylor, C.; Wissman, B.

    2015-09-01

    Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on large area, low-cost composite substrates, such as CdTe-buffered Si or GaAs, are envisioned for next-generation IRFPAs. Thermal expansion mismatch is among various material parameters that govern the structural properties of the final detector layer. It has previously been shown that thermal expansion mismatch plays the dominant role in the residual stress characteristics of these heteroepitaxial structures (Jacobs et al. in J Electron Mater 37:1480, 2008). The wafer curvature (bowing) resulting from residual stress, is a likely source of problems that may occur during subsequent processing. This includes cracking of the film and substrate during post-growth annealing processes or even certain characterization techniques. In this work, we examine dynamic curvature and stress during molecular beam epitaxy (MBE), of CdTe on Si and GaAs substrates. The effect of temperature changes on wafer curvature throughout the growth sequence is documented using a multi-beam optical sensor developed by K-Space Associates. This monitoring technique makes possible the study of growth sequences which employ annealing schemes and/or interlayers to influence the final residual stress state of the heteroepitaxial structures.

  11. Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

    NASA Astrophysics Data System (ADS)

    Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

    Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

  12. Structural, electronic and mechanical properties of alkaline earth metal oxides MO (M=Be, Mg, Ca, Sr, Ba)

    NASA Astrophysics Data System (ADS)

    Cinthia, A. Jemmy; Priyanga, G. Sudha; Rajeswarapalanichamy, R.; Iyakutti, K.

    2015-04-01

    The structural, electronic and mechanical properties of alkaline earth metal oxides MO (M=Be, Mg, Ca, Sr, Ba) in the cubic (B1, B2 and B3) phases and in the wurtzite (B4) phase are investigated using density functional theory calculations as implemented in VASP code. The lattice constants, cohesive energy, bulk modulus, band structures and the density of states are computed. The calculated lattice parameters are in good agreement with the experimental and the other available theoretical results. Electronic structure reveals that all the five alkaline earth metal oxides exhibit semiconducting behavior at zero pressure. The estimated band gaps for the stable wurtzite phase of BeO is 7.2 eV and for the stable cubic NaCl phases of MgO, CaO, SrO and BaO are 4.436 eV, 4.166 eV, 4.013 eV, and 2.274 eV respectively. A pressure induced structural phase transition occurs from wurtzite (B4) to NaCl (B1) phase in BeO at 112.1 GPa and from NaCl (B1) to CsCl (B2) phase in MgO at 514.9 GPa, in CaO at 61.3 GPa, in SrO at 42 GPa and in BaO at 14.5 GPa. The elastic constants are computed at zero and elevated pressures for the B4 and B1 phases for BeO and for the B1 and B2 phases in the case of the other oxides in order to investigate their mechanical stability, anisotropy and hardness. The sound velocities and the Debye temperatures are calculated for all the oxides using the computed elastic constants.

  13. MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors

    NASA Astrophysics Data System (ADS)

    Lubyshev, Dmitri; Fastenau, Joel M.; Gu, Xing; Liu, Amy W. K.; Prineas, John; Koerperick, Edwin J.; Olesberg, Jonathon T.; Jackson, Eric M.; Nolde, Jill A.; Yi, Changhyun; Aifer, Edward H.

    2010-04-01

    Ga(In)Sb/InAs-based strained-layer superlattices (SLS) have received considerable attention recently for their potential in infrared (IR) applications. These heterostructures create a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of Ga(In)Sb layer. By varying the thickness and composition of the constituent materials, the bandgap of these SLS structures can be tailored to cover a wide range of the mid-wave and long-wave infrared (MWIR and LWIR) absorption bands. Suppression of Auger recombination and reduction of tunneling current can also be realized through careful design of the Type-II band structure. The growth of high-quality Ga(In)Sb/InAs-based SLS epiwafers is challenging due to the complexity of growing a large number of alternating thin layers with mixed group V elements. In this paper, the development of a manufacturable growth process by molecular beam epitaxy (MBE) using a multi-wafer production reactor will be discussed. Various techniques were used to analyze the quality of the epitaxial material. Structural properties were evaluated by high-resolution x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). Optical properties were assessed by low-temperature photoluminescence measurements (PL). Surface morphology and roughness data as measured by Nomarski optical microscope and atomic force microscope (AFM) will be presented. Device characteristics such as dynamic impedance, responsivity, quantum efficiency, and J-V characteristics of photodiodes fabricated using our SLS epiwafers will be discussed.

  14. RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

    NASA Astrophysics Data System (ADS)

    Kakuda, M.; Morikawa, S.; Kuboya, S.; Katayama, R.; Yaguchi, H.; Onabe, K.

    2013-09-01

    We fabricated cubic AlN (c-AlN) films on MgO (001) substrates via 2-step c-GaN buffer layer by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). The effect of low temperature c-GaN buffer layer on the surface flatness and crystal quality of c-AlN was investigated by AFM and XRD reciprocal space mapping analysis. We examined optical properties of the c-AlN film by spectroscopic ellipsometry. The absorption edge by the direct transition of the c-AlN film was 5.95 eV caused by the hexagonal phase incorporation.

  15. Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements. [during MBE of GaAs and InAs

    NASA Technical Reports Server (NTRS)

    Lewis, B. F.; Fernandez, R.; Grunthaner, F. J.; Madhukar, A.

    1986-01-01

    A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

  16. Abnormal variation of the growth rate under high NH3 injected regime in the growth of GaN by NH3-source MBE

    NASA Astrophysics Data System (ADS)

    Choi, Sungkuk; Jung, Soohoon; Cho, Youngji; Lee, Sangtae; Chang, Jiho

    2017-03-01

    Unusual growth-rate variation during GaN formation using gas-source MBE has been discussed with respect to the chemical reactions occurring in the transition layer. A series of samples were prepared to confirm the assumption by verifying the growth regime and the impacts on the crystal quality of the GaN film. We found that the growth rate can be varied along with the amount of NH3 supply even under NH3-rich condition with a fixed Ga flux. Two growth conditions were investigated for their impact on the transition layer. One was the atomic force microscopy result, which revealed that the adatom migration length is closely related to the transition layer formation. The other one is the photoluminescent spectra, which revealed that the luminescence property of GaN is strongly related to the transition layer.

  17. Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe

    NASA Astrophysics Data System (ADS)

    Pociask-Bialy, Malgorzata; Izhnin, Ihor; Voitsekhovskii, Alexander; Nesmelov, Sergey; Dzyadukh, Stanislav

    2016-12-01

    Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear.

  18. Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

    NASA Astrophysics Data System (ADS)

    X, Z. Liu; C, Yue; C, T. Xia; W, L. Zhang

    2016-01-01

    High-resistivity β-Ga2O3 thin films were grown on Si-doped n-type conductive β-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6× 106 Ω. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 × 1018 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 × 102% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga2O3 thin films and the n-type conductive β-Ga2O3 single-crystal substrate. Project supported by the National Nature Science Foundation of China (Grant No. 61223002) the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13111103700), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2012018530003).

  19. Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-Hg1- x Cd x Te ( x = 0.31-0.32) in a Temperature Range OF 8-300 K

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Vasil'ev, V. V.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Kuz'min, V. D.; Remesnik, V. G.

    2014-09-01

    Admittance of MIS structures based on graded-gap n-Hg1- х Cd х Te ( x = 0.31-0.32) grown by molecular beam epitaxy (MBE) is investigated in a wide temperature range (8-300 K). It is shown that the temperature and frequency dependences of the differential resistance of space charge region for structures with a graded-gap layer are qualitatively similar to those for structures without a graded-gap layer. It is found that for MIS structures based on MBE n-Hg1- х Cd х Te ( x = 0.31-0.32), regardless of the presence of a graded-gap layer, the differential resistance of space charge region is limited by the processes of Shockley-Read generation in the temperature range of 25-100 K.

  20. Lattice-engineered MBE growth of high-indium mole fraction InGaAs for low cost MMICs and (1.3--1.55 {micro}m) OEICs

    SciTech Connect

    Childs, T.T.; Sokolov, V.; Sullivan, C.T.

    1997-11-01

    Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 {micro}m wavelength range and monolithic microwave (or mm-wave) integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors (HEMTs) for application in MMICs. Several examples of active and passive photonic devices grown by MBE are presented including an optical ridge waveguide, and a photodetector for detection of light in the 1.3 {micro}m range. The material structure includes a 3-layer AlGaAs/GaAs/AlGaAs optical waveguide and a thin InGaAs absorbing layer situated directly above the optical waveguide. Metal-semiconductor-metal (MSM) photodetectors are formed on the top surface of the InGaAs layer for collection of the photo-induced carriers. The optical ridge waveguide is designed for lateral incidence of the light to enhance the MSM photodetector responsivity. Initial measurements on the optical waveguide and photodetector are presented.

  1. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    SciTech Connect

    Mahata, Mihir Kumar; Ghosh, Saptarsi; Jana, Sanjay Kumar; Bag, Ankush; Kumar, Rahul; Chakraborty, Apurba; Biswas, Dhrubes; Mukhopadhyay, Partha

    2014-11-15

    In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al{sub 2}O{sub 3}) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10{sup −3}(1 × 10{sup −3}), and −1.7 × 10{sup −3}(2 × 10{sup −3}) in GaN layer and 5.1 × 10{sup −3} (−3.3 × 10{sup −3}), and 8.8 × 10{sup −3}(−1.3 × 10{sup −3}) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.

  2. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

    SciTech Connect

    Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.; Coldea, A. I.; Hesjedal, T.; Baker, A. A.; Harrison, S. E.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Laan, G. van der

    2014-12-15

    We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  3. n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

    NASA Astrophysics Data System (ADS)

    Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Weifeng; Zhang, Yuzhi; Luo, Yingmin

    2016-12-01

    High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.

  4. Controlling the compositional inhomogeneities in AlxGa1-xN/AlyGa1-yN MQWs grown by PA-MBE: Effect on luminescence properties

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, Anirban; Kumar, Deepak; Sridhara Rao, D. V.

    2016-04-01

    Al0.35Ga0.65N/Al0.55Ga0.45N MQWs were grown by PA-MBE using a range of group III/V flux ratios. TEM images indicate sharp interfaces and well/barrier widths of 1.5/2 nm. We observe that small variations of group III/V flux ratio cause dramatic variations in the room temperature photoluminescence (PL) spectra. In addition to band edge luminescence, multiple low energy PL peaks are observed for growths under excess group III conditions, which are absent for near-stoichiometric growth. Temperature dependent PL measurements indicate that at room temperature, emission occurs due to transitions at potential fluctuations generated by the presence of compositional inhomogeneity. These effects are dominant for growth under excess group III conditions due to the presence of a metallic layer on the growth surface during deposition. This can be eliminated by the use of an Indium surfactant during growth, which modifies the diffusion length of Ga and Al adatoms. Under these conditions, the optical properties of MQWs are relatively insensitive to variations in group III to V flux ratio and hence substrate temperature, thus making them suitable for industrial-scale fabrication of optoelectronic devices in the ultraviolet range.

  5. Influence of High Nitrogen Flux on Crystal Quality of Plasma-Assisted MBE Grown GaN Layers Using Raman Spectroscopy: Part-II

    SciTech Connect

    Asghar, M.; Hussain, I.; Islah u din; Saleemi, F.

    2007-05-09

    We have investigated lattice properties of plasma assisted MBE grown hexagonal GaN layers at varying nitrogen and gallium fluxes using Raman spectroscopy. Room temperature Raman spectra of Ga-rich layers and stoichiometric GaN are similar showing excitation modes at 434 cm-1, 567 cm-1 and 729 cm-1 identified as residual laser line, E{sub 2}{sup H} and A1(LO) mode, respectively. Similarity of Ga-rich and stoichiometric GaN layers is interpreted as the indication of comparable crystal quality of both GaN layers. In contrast, Raman scattering associated with N-rich GaN samples mere exhibit a broad band of excitations in the range of 250-650cm-1 leaving out A1(LO) mode. This typical observation along with intensity distribution of the peaks, is correlated with rough surface, bad crystal quality and high concentration of defects. Based on atomic displacement scheme, the broad band is identified as Ga- vacancies.

  6. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

    SciTech Connect

    Kumar, Mahesh; Bhat, Thirumaleshwara N.; Roul, Basanta; Rajpalke, Mohana K.; Kalghatgi, A.T.; Krupanidhi, S.B.

    2012-06-15

    Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.

  7. Use of a High-flux Atomic Oxygen Source for MBE growth of the di- and tri- oxides of Cr, Mo, and W

    NASA Astrophysics Data System (ADS)

    Ingle, Nicholas; Hammond, Robert; Beasley, Malcolm

    2000-03-01

    The MBE growth of several of the highly oxidized phases of the Group IIB elements (Cr, Mo, and W) are of great current interest. In particular, CrO_2, a theorized half-metallic ferromagnet, has yet to be grown in a form that allows high quality tunneling measurements to be performed. Also, thin films of WO3 for controlled Na doping studies are of interest to help understand the recently published results on possible superconductivity in this material(S. Reich and Y. Tsabba, EUROPEAN PHYSICAL JOURNAL B v. 9(1) pp. 1-4 MAY 1999 and Shengelaya A, Reich S, Tsabba Y, and Muller KA EUROPEAN PHYSICAL JOURNAL B , v. 12(1) pp. 13-15 NOV 1999). Using a new high-flux atomic oxygen source and detection scheme, RHEED, and in-situ core-level photoemission we present the atomic oxygen-temperature phase diagrams indicating the conditions under which the di- and tri- oxide phases of Cr, Mo, and W can be grown.

  8. Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (1 1 1)B substrates

    NASA Astrophysics Data System (ADS)

    Tamai, Isao; Hasegawa, Hideki

    2007-04-01

    As a combination of novel hardware architecture and novel system architecture for future ultrahigh-density III-V nanodevice LSIs, the authors' group has recently proposed a hexagonal binary decision diagram (BDD) quantum circuit approach where gate-controlled path switching BDD node devices for a single or few electrons are laid out on a hexagonal nanowire network to realize a logic function. In this paper, attempts are made to establish a method to grow highly dense hexagonal nanowire networks for future BDD circuits by selective molecular beam epitaxy (MBE) on (1 1 1)B substrates. The (1 1 1)B orientation is suitable for BDD architecture because of the basic three-fold symmetry of the BDD node device. The growth experiments showed complex evolution of the cross-sectional structures, and it was explained in terms of kinetics determining facet boundaries. Straight arrays of triangular nanowires with 60 nm base width as well as hexagonal arrays of trapezoidal nanowires with a node density of 7.5×10 6 cm -2 were successfully grown with the aid of computer simulation. The result shows feasibility of growing high-density hexagonal networks of GaAs nanowires with precise control of the shape and size.

  9. Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Xin, H. P.; Welty, R. J.; Hong, Y. G.; Tu, C. W.

    2001-07-01

    We have studied the effects of N incorporation in Ga(In)P and explored their applications for light-emitting diodes (LEDs). The GaInNP epilayers were grown on (1 0 0) GaP substrates by gas-source MBE using an RF nitrogen radical beam source. Red LEDs based on GaN 0.011P 0.989/GaP double-heterostructure grown on (1 0 0) GaP substrates were successfully fabricated. Compared to conventional AlGaInP LEDs, this LED eliminates etching of the GaAs substrate and wafer-bonding of a transparent GaP substrate. Partially relaxed GaN 0.011P 0.989 active layers, however, degraded the emission efficiency. Incorporation of In in GaN 0.015P 0.985 alloy to lattice-match to GaP not only maintains the direct band gap, but also improves the sample structural quality and increases the integrated PL intensity by 40%, compared to GaN 0.015P 0.985.

  10. Optical characterisation of catalyst free GaAsP and GaAsP core-shell nanowires grown directly on Si substrates by MBE

    NASA Astrophysics Data System (ADS)

    Orchard, Jonathan R.; Zhang, Yunyan; Wu, Jiang; Liu, Huiyun; Mowbray, David

    2015-02-01

    We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of the GaAsP NWs and optimisation of these conditions yields high crystal quality structures. Scanning electron microscopy (SEM) as well as temperature, power and time resolved photoluminescence (PL) are used to study the optical and structural properties of the NWs. The incorporation of P into the NWs is used to shift the PL emission for ~ 810 nm to ~ 730 nm at 77 K, and also results in enhanced PL and an improved carrier lifetime. The addition of a p-doped GaAsP shell to a GaAsP core NW reduces the nonradiative recombination at surface states, as evidenced by x14 reduction of PL quenching with temperature, enhanced carrier lifetime, as well as a x3.5 increase in 77 K integrated PL intensity.

  11. GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-He; Liu, San-Jie; Xia, Yu; Gan, Xing-Yuan; Wang, Hai-Xiao; Wang, Nai-Ming; Yang, Hui

    2015-10-01

    We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction (TJ) with using tellurium (Te) and magnesium (Mg) as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy (MBE) at low temperature. The test Te/Mg-doped GaAs TJ shows a peak current density of 21 A/cm2. The tandem solar cell by the Te/Mg TJ shows a short-circuit current density of 12 mA/cm2, but a low open-circuit voltage range of 1.4 V˜1.71 V under AM1.5 illumination. The secondary ion mass spectroscopy (SIMS) analysis reveals that the Te doping is unexpectedly high and its doping profile extends to the Mg doping region, thus possibly resulting in a less abrupt junction with no tunneling carriers effectively. Furthermore, the tunneling interface shifts from the intended GaAs n++/p++ junction to the AlGaInP/GaAs junction with a higher bandgap AlGaInP tunneling layers, thereby reducing the tunneling peak. The Te concentration of ˜ 2.5 × 1020 in GaAs could cause a lattice strain of 10-3 in magnitude and thus a surface roughening, which also negatively influences the subsequent growth of the top subcell and the GaAs contacting layers. The doping features of Te and Mg are discussed to understand the photovoltaic response of the studied tandem cell. Project supported by the SINANO-SONY Joint Program (Grant No. Y1AAQ11001), the National Natural Science Foundation of China (Grant No. 61274134), the USCB Start-up Program (Grant No. 06105033), and the International Cooperation Projects of Suzhou City, China (Grant No. SH201215).

  12. Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure

    NASA Astrophysics Data System (ADS)

    Asai, K.; Feng, J. M.; Vaccaro, P. O.; Fujita, K.; Ohachi, T.

    2000-06-01

    The As vapor pressure dependence of the Ga desorption rate during molecular beam epitaxy (MBE) growth on GaAs( n11)A ( n=1-4 hereafter) substrates was studied by photoluminescence (PL) measurements at 12 K for undoped AlGaAs/GaAs asymmetric double quantum wells (ADQWs). Reflection high energy electron diffraction (RHEED) oscillation measurements on a GaAs(100) surface were also used. Two K-cells of As solid sources (corresponding to beam equivalent pressures (BEPs) of 9.0×10 -6 and 4.5×10 -5 Torr) were used to change the As pressure rapidly. The Ga flux and substrate temperature were kept constant at 0.76 ML/s and 12 K, respectively, while the As flux changed from 7.6 (BEP 9.0×10 -6 Torr) to 32 ML/s (4.5×10 -5 Torr). With increasing As pressure, two separated PL peaks for the wide well (WW) of high index substrates were observed. This peak separation is attributed to a reduced well depth from an increasing Ga desorption rate. The energy differences of the PL peak depending on the off-angle from (111)A to (100) plane indicates an orientation-dependent Ga desorption rate. Moreover, amongst all ( n11)A and (100) planes, the Ga desorption rate was smallest from the (111)A surface. The increase of Ga desorption from the surface at high As pressures probably arose from an increasing coverage with a quasi-liquid layer (QLL).

  13. MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

    NASA Astrophysics Data System (ADS)

    Park, Yeonjoon

    The advanced semiconductor material InGaAsN was grown with nitrogen plasma assisted Molecular Beam Epitaxy (MBE). The InGaAsN layers were characterized with High Resolution X-ray Diffraction (HRXDF), Atomic Fore Microscope (AFM), X-ray Photoemission Spectroscopy (XPS) and Photo-Luminescence (PL). The reduction of the band gap energy was observed with the incorporation of nitrogen and the lattice matched condition to the GaAs substrate was achieved with the additional incorporation of indium. A detailed investigation was made for the growth mode changes from planar layer-by-layer growth to 3D faceted growth with a higher concentration of nitrogen. A new X-ray diffraction analysis was developed and applied to the MBE growth on GaAs(111)B, which is one of the facet planes of InGaAsN. As an effort to enhance the processing tools for advanced semiconductor materials, gas assisted Focused Ion Beam (FIB) vertical milling was performed on GaN. The FIB processed area shows an atomically flat surface, which is good enough for the fabrication of Double Bragg Reflector (DBR) mirrors for the Blue GaN Vertical Cavity Surface Emitting Laser (VCSEL) Diodes. An in-situ electron beam system was developed to combine the enhanced lithographic processing capability with the atomic layer growth capability by MBE. The electron beam system has a compensation capability against substrate vibration and thermal drift. In-situ electron beam lithography was performed with the low pressure assisting gas. The advanced processing and characterization methods developed in this thesis will assist the development of superior semiconductor materials for the future.

  14. Nitrogen incorporation rate, optimal growth temperature, and AsH 3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source

    NASA Astrophysics Data System (ADS)

    Kitatani, T.; Kondow, M.; Nakahara, K.; Larson, M. C.; Yazawa, Y.; Okai, M.; Uomi, K.

    1999-05-01

    We have investigated the conditions for growing GaInNAs by gas-source MBE using N-radicals as an N-source. The optimal growth temperature of GaInNAs with good surface morphology and PL characteristics was clarified: at higher growth temperature, the surface morphology degraded. On the other hand, PL intensity became weak at temperatures lower than the optimal one. This trend is similar to that in GaInAs grown by MBE. AsH 3-flow rate mainly affected crystal quality of GaInNAs rather than incorporation of nitrogen atoms. It was also confirmed experimentally that the N-radicals produced by RF-discharge are incorporated in the epitaxial layer like dopant atoms, indicating that their sticking coefficient is about one. This result is unlike that for the MOCVD growth using dimethylhydrazine as an N-source. These results are crucial to further improve the crystal quality of GaInNAs.

  15. Effects of MgO buffer annealing on optical and electrical quality of P-MBE grown ZnO films on c-sapphire

    NASA Astrophysics Data System (ADS)

    Setiawan, A.; Yao, T.

    2016-04-01

    Zinc oxide (ZnO) has been attracting much attention because of its potential applications in photonic and optoelectronic devices. In this present study, we investigated the effect of MgO buffer annealing on the optical and electrical quality of P-MBE grown ZnO films on c-sapphire with MgO buffer layer. The optical quality was observed by low-temperature PL (photoluminescence) measurement in the near band edge emission region measured at 10K and at 77K. The emission line located at 3.368eV dominates the spectrum in both samples (ZnO with and without MgO buffer annealing) at 10K and 77K. This emission can be divided into two peaks, 3.367eV and 3.363eV and assigned as I2 (ionized donor bound excitons emission) and I4 (Hydrogen donor related emission), respectively. The relative intensity of these donor bound exactions to free exaction emission of the sample without MgO buffer annealing is greater than that of the sample with MgO buffer annealing. Comparison of the PL spectra of ZnO with and without annealing revealed that the intensity of free exciton emission from the sample with MgO buffer annealing is twice of that from the sample without annealing. We also found that the intensity of deep-level broad emission is reduced by about 1/3 by MgO-buffer annealing. Hence, the decrease of deep level emission intensity and the increase of free exciton emission intensity by annealing of MgO buffer corresponds to the reduction of defects of the ZnO film. The PL properties also suggest that there are fewer nonradiative recombination centers in ZnO layers with MgO buffer annealing than those in ZnO layers grown without MgO buffer annealing. The electrical quality was measured by room temperature Hall measurements. We found that the samples have a background n-type carrier concentration. The ZnO samples with MgO buffer annealing has a carrier concentration of 1.17×1017 cm-3 and Hall mobility of 120 cm2/V.s, while the ZnO sample without MgO buffer annealing has a carrier

  16. Study of the Verwey transition of Fe{sub 3}O{sub 4} films and Fe{sub 3}O{sub 4}/MgO multilayers grown by MBE

    SciTech Connect

    Veerdonk, R.J.M. van de; Heijden, P.A.A. van der |; Gijs, M.A.M.; Wolf, R.M.; Jonge, W.J.M. de

    1996-11-01

    Thin magnetite (Fe{sub 3}O{sub 4}) films and Fe{sub 3}O{sub 4}/MgO multilayers have been epitaxially grown by Molecular Beam Epitaxy (MBE) on MgO(100) and MgAl{sub 2}O{sub 4}(100) substrates. The epitaxial growth on MgO(100) substrates, with a slightly larger bulk lattice parameter than that of magnetite, resulted in an in-plane expansion of the magnetite lattice, accompanied by a perpendicular compression. For films grown on MgAl{sub 2}O{sub 4}(100), with a smaller lattice parameter, the substrate misfit is relaxed by the incorporation of misfit dislocations at the interface. It is shown that the substrates have a large effect on the magnetic and electronic properties of the films. The characteristic Verwey transition is shifted towards lower temperatures, broadened, and reduced in amplitude, more so for thinner films. This can not be quantitatively explained by substrate induced stress alone, but is more likely due to a rigid structural coupling between the magnetite film and the cubic lattice of the substrate. Hereby the orthorhombic deformation accompanying the Verwey transition may be suppressed. When growing at reduced oxygen pressure, the length scale for the rigid coupling will be reduced by the introduction of vacancies. This leads to more bulk-like resistivity and Verwey transition characteristics, but also to deviations from stoichiometry, as suggested by magnetization and Ferromagnetic Resonance (FMR) experiments.

  17. Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2017-03-01

    Admittance of MIS structures based on MBE n-Hg1-xCdxTe (x=0.22-0.23) with Al2O3 as insulator is experimentally investigated for the cases of the presence and absence of near-surface graded-gap layers with high content of CdTe. It is shown that the structures with graded-gap layers are characterized by a significant hysteresis of electrical characteristics, a deep and broad dip in the low-frequency capacitance-voltage characteristic, and high values of the differential resistance of the space charge region in the strong inversion. It is found that already at 77 K, the capacitance-voltage characteristics of structures with graded-gap layers have a high-frequency behavior relative to the recharge time of surface states in the frequency range of (1-2000) kHz. At frequencies exceeding 200 kHz and a temperature of (9-15) K, the capacitance-voltage characteristics of the structures without graded-gap layers have a high-frequency behavior relative to the recharge time of surface states located near the Fermi energy for an intrinsic semiconductor. Peculiarities of determining the density of surface states and the electron concentration in MIS structures with and without graded-gap layers are studied.

  18. Corrosion protection of aerospace grade magnesium alloy Elektron 43(TM) for use in aircraft cabin interiors

    NASA Astrophysics Data System (ADS)

    Baillio, Sarah S.

    Magnesium alloys exhibit desirable properties for use in transportation technology. In particular, the low density and high specific strength of these alloys is of interest to the aerospace community. However, the concerns of flammability and susceptibility to corrosion have limited the use of magnesium alloys within the aircraft cabin. This work studies a magnesium alloy containing rare earth elements designed to increase resistance to ignition while lowering rate of corrosion. The microstructure of the alloy was documented using scanning electron microscopy. Specimens underwent salt spray testing and the corrosion products were examined using energy dispersive spectroscopy.

  19. Microstructural Characteristics of High Rate Plastic Deformation in Elektron (trademark) WE43 Magnesium Alloy

    DTIC Science & Technology

    2012-04-01

    Mordike T. Ebert, "Magnesium Properties - applications - potential," Materials Science and Engineering A, vol. 302, no. 1, pp. 37-45, 2001. [2...boundary sliding in rolled AZ91 magnesium alloy at high strain rates," Materials Science and Engineering A, vol. 360, no. 1-2, pp. 107-115,2003

  20. Volatile Organic Analyzer (VOA) in 2006: Repair, Revalidation, and Restart of Elektron Event

    NASA Technical Reports Server (NTRS)

    Limero, Thomas

    2007-01-01

    The Volatile Organic Analyzer (VOA) was launched to the International Space Station (ISS) in August 2001 and was the first instrument to provide near real-time measurement of volatile organic compounds in a spacecraft atmosphere. The VOA performed an analysis of the ISS air approximately twice a month for most of its operation through May 2003. This intermittent operation, caused by a software interface issue with the ISS communication bus, slowed the validation of the VOA. However, operational validation was completed in 2003 when analysis of air samples collected in grab sample containers (GSCs) compared favorably with simultaneous VOA runs (1). The VOA has two channels that provide redundant function, albeit at slightly reduced performance, when only one channel is operating (2). Most target compounds can be detected on both channels. In January 2003, the VOA identified a malfunction in the channel 2 preconcentrator and it shut down that channel. The anomaly profile suggested that a fuse might have failed, but the root cause could not be determined. In May 2003, channel 1 was shut down when the detector s elevated temperature could not longer be maintained. Since both VOA channels were now deactivated, VOA operations ended until an in-flight repair could be planned and executed. This paper describes the process to repair the VOA and to revalidate it for operations, and then an account is given of the VOA s contribution following a contingency event on ISS.

  1. Fabrication of nanostructures using MBE and MOVPE

    NASA Astrophysics Data System (ADS)

    Ahopelto, J.; Lipsanen, H. K.; Sopanen, M.; Koljonen, T.; Tuomi, T.; Airaksinen, V. M.; Sinkkonen, J.; Sirén, E.

    1994-01-01

    Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands. Molecular beam epitaxy is used for the fabrication of a gold island mask on GaAs. Reactive ion etching through the gold mask produces a high density of GaAs columns with diameters down to 20 nm.

  2. MBE of (Hg,Cd)Te

    DTIC Science & Technology

    1988-10-01

    TERMS (Contin/ue on reverse if necessary and identify by block number) I IELD IGROUP SUB-GROUP £~iimA~A*~w 1 05 caltlcvi qeIv~~ 12 t]T/40 OSTRACT...Continue on reverse if necessary and identify by block number) Te work sponsored under this contract has centered on the molecular beam epitaxial growth...layhwdfg wth off CdTmbSb undeconvedal Mi gwth codidons is ou nindisulikey conul at wmly anlqwoaf n2Te3 mdemmtalSb. While these stomae sonest that the

  3. Growing Epitaxial Graphene on an Insulator by MBE

    NASA Astrophysics Data System (ADS)

    Mohapatra, Chandra; Eckstein, James

    2009-03-01

    We have used electron beam evaporation of solid carbon (C) to deposit graphene on MgO <111> at 850C. The growth appears epitaxial as observed by in-situ RHEED which also reveals that the hot scattering surface transitions from an insulator to a conductor after deposition of 1 monolayer of C. Growth at higher temperatures gives better crystallinity. We further characterize the film by ex-situ Raman spectroscopy, AFM and transport. Raman reveals all the characteristic G, D and 2D peaks of graphene and the 2D peak can be fit to a single lorentzian typical for graphene. AFM pictures show that the surface consists of flat connected domains, which are uniform across the substrate. Electrical transport shows insulating behavior with resistance (R) varying as 1/T^2. This work was supported by the DOE BES at the F. Seitz Materials Research Laboratory at the University of Illinois, Urbana.

  4. MBE growth of GaP on a Si substrate

    SciTech Connect

    Sobolev, M. S. Lazarenko, A. A.; Nikitina, E. V.; Pirogov, E. V.; Gudovskikh, A. S.; Egorov, A. Yu.

    2015-04-15

    It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

  5. MBE Growth of GaAs Whiskers on Si Nanowires

    NASA Astrophysics Data System (ADS)

    Maxwell Andrews, Aaron; Klang, Pavel; Detz, Hermann; Lugstein, Alois; Schramböck, Matthias; Steinmair, Mathias; Hyun, Youn-Joo; Bertagnolli, Emmerich; Müller, Thomas; Unterrainer, Karl; Schrenk, Werner; Strasser, Gottfried

    2010-01-01

    We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {112} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

  6. Native defects in MBE-grown CdTe

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  7. Quantum wire structures by MBE overgrowth on a cleaved edge

    NASA Astrophysics Data System (ADS)

    Pfeiffer, Loren; Störmer, H. L.; West, K.; Baldwin, K. W.

    1991-05-01

    We have recently demonstrated the existence of a high mobility (6.1×10 5 cm 2/V·s) two-dimensional electron gas (2DEG) at the (110) vicinal surface formed by cleaving [L. Pfeiffer et al., Appl. Phys. Letters 56 (1990) 1697] a (100) GaAs wafer. We have now expanded this work to modulation-doped overgrowth on the cleaved edge of a multiperiod superlattice. We report here the first observation of the quantum Hall characteristics in such a two-dimensional system containing an atomically precise 71 Å GaAs by 31 Å Al 0.24Ga 0.76As compositional superlattice. The onset of Shubnikov-De Haas oscillations occurs at only 3000 G, implying the Landau cyclotron orbits are phase coherent over diameters as large as 5000 Å, corresponding to more than 200 GaAs/AlGaAs interface crossings.

  8. Program plan for the MBE-4 multiple beam experiment

    SciTech Connect

    Avery, R.T.

    1985-02-01

    The technical description treats the arrangement of the Injector System (made up of an existing High Voltage Marx Generator, a new Four-beam Source array and a Beam Conditioning Unit for matching and steering) and the Accelerator Apparatus which contains the 24 shaped-pulsed accelerating units. Flexibility in diagnostic capability and physics experiments has been maintained insofar as possible.

  9. The Ballistic and Corrosion Evaluation of Magnesium Elektron E675 vs. Baseline Magnesium Alloy AZ31B and Aluminum Alloy 5083 for Armor Applications

    DTIC Science & Technology

    2011-06-01

    Titanium — — 0.15 max Others each 0.05 max — 0.05 max Others total — 0.30 max 0.15 max Magnesium 99.80 min REM 4.0–4.9 max Specification cited ASTM...W COOK EGLIN AFB FL 32542 4 UNIV OF TEXAS INST FOR ADVNCD TECH S BLESS H FAIR J HODGE R SUBRAMANIAN 3925 W BRAKER LN...RSRCH INST T HOLMQUIST G JOHNSON 5353 WAYZATA BLVD STE 607 MINNEAPOLIS MN 55416 1 US ARMY RAPID EQUIPPING FORCE R TURNER 10236

  10. Incorporation of Sb and As in MBE grown GaAsxSb1-x layers

    NASA Astrophysics Data System (ADS)

    Zederbauer, Tobias; Andrews, Aaron Maxwell; MacFarland, Don; Detz, Hermann; Schrenk, Werner; Strasser, Gottfried

    2017-03-01

    With the increasing interest in low effective mass materials for intersubband devices, mixed As-Sb compounds, like GaAsxSb1-x or AlxIn1-xAsySb1-y, gain more and more attention. The growth of these materials, however, still provides significant challenges due to the complex interaction between As and Sb. In this work, we provide an in-depth study on the incorporation of Sb into the GaAsxSb1-x layers and compare our findings to the present literature on this topic. It is found that both the composition and the crystal quality of GaAsxSb1-x layers are strongly influenced by the growth rate due to the As-for-Sb exchange reaction which takes place at the growing surface, and that high crystal quality can be achieved when the growth is performed under Sb limited conditions.

  11. Investigation of VO-Zni native donor complex in MBE grown bulk ZnO

    NASA Astrophysics Data System (ADS)

    Asghar, M.; Mahmood, K.; Ferguson, I. T.; Raja, M. Yasin A.; Xie, Y. H.; Tsu, R.; Hasan, M.-A.

    2013-10-01

    In this paper, we have experimentally investigated the theoretical predictions of VO-Zni to be a native donor in ZnO. Intrinsically zinc-rich n-type ZnO thin films having ND ˜ 6.23 × 1018 cm-3 grown by molecular beam epitaxy on Si (0 0 1) substrate were annealed in oxygen environment at 500-800 °C, keeping a step of 100 °C for 1 h, each. Room temperature Hall measurements demonstrated that free donor (VO-Zni) concentration decreased exponentially and Arrhenius plot yielded activation energy to be 1.2 ± 0.01 eV. This value is in agreement with theoretically reported activation energy of VO-Zni donor complex in ZnO. We argue; this observation can be explained by two-step process: (i) incoming oxygen fills VO of VO-Zni complex leaving behind Zni; (ii) Zni releases its energy and moves to a lower energy state with respect to the conduction band minima and/or occupies an inactive location. Consequently, Zni-VO complex loses its donor role in the lattice. Our experimental data supported theoretical predictions of VO-Zni to be a native donor. Results from photoluminescence spectroscopy carried out on Zn-rich ZnO additionally justify the existence of VO-Zni complex.

  12. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    SciTech Connect

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  13. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

  14. A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface

    NASA Astrophysics Data System (ADS)

    Bomphrey, J. J.; Ashwin, M. J.; Jones, T. S.

    2017-02-01

    We report here the temperature-dependent incorporation kinetics of dimeric arsenic in InAs(001) homoepitaxy, using reflection high-energy electron diffraction (RHEED). Surface reconstructions, in combination with the RHEED investigation have provided insight into the growth of InAs(001), developing an accurate method of controlling the V:III ratio, which has been utilised to probe the low temperature epitaxial growth of indium arsenide epitaxial layers.

  15. Properties of arsenic-implanted Hg1-xCdxTe MBE films

    NASA Astrophysics Data System (ADS)

    Izhnin, Igor I.; Voitsekhovskii, Alexandr V.; Korotaev, Alexandr G.; Fitsych, Olena I.; Bonchyk, Oleksandr Yu.; Savytskyy, Hrygory V.; Mynbaev, Karim D.; Varavin, Vasilii S.; Dvoretsky, Sergey A.; Yakushev, Maxim V.; Jakiela, Rafal; Trzyna, Malgorzata

    2016-12-01

    Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23-0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.

  16. Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates

    NASA Astrophysics Data System (ADS)

    Lubyshev, Dmitri; Qiu, Yueming; Fastenau, Joel M.; Liu, Amy W. K.; Koerperick, Edwin J.; Olesberg, Jon T.; Norton, Dennis, Jr.

    2012-01-01

    Antimony-based photodetector materials have attracted considerable interest for their potential and demonstrated performance in infrared detection and imaging applications. Mid-wavelength infrared detector has been demonstrated using bulk InAsSb/AlAsSb-based nBn structures. Heterostructures based on InAs/Ga(In)Sb strained layer superlattices create a type-II band alignment that can be tailored to cover a wide range of the mid- and long-wavelength infrared absorption bands by varying the thickness and composition of the constituent materials. Through careful design, these Sb-based detectors can realize desirable features such as higher operating temperature, better uniformity, suppression of Auger recombination, reduction of tunneling currents, and higher quantum efficiency. The manufacturing challenge of these structures is the reproducible growth of high-quality Sb-based epiwafers due to their complex designs including large numbers of alternating thin layers and mixed group-V elements. In this paper, we discuss the manufacturability of such epiwafers on 3" and 4" diameter GaSb substrates by molecular beam epitaxy using multi-wafer production tools. Various techniques were used to characterize the material properties of these wafers, including high-resolution x-ray diffraction, low-temperature photoluminescence, Nomarski optical microscopy, and atomic force microscopy.

  17. Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE

    NASA Astrophysics Data System (ADS)

    Fastenau, Joel M.; Lubyshev, Dmitri; Qiu, Yueming; Liu, Amy W. K.; Koerperick, Edwin J.; Olesberg, Jon T.; Norton, Dennis

    2013-07-01

    Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that can be tailored to cover a wide range of the mid- and long-wavelength bands by varying the thickness and composition of the constituent materials, and bulk InAsSb-based XBn barrier designs. These materials can provide desirable detector features such as wider wavelength range, suppression of tunneling currents, improved quantum efficiency, and higher operating temperatures. In order to bring these advantages to market, a reliable manufacturing process must be established on large diameter substrates. We report our latest work on the molecular beam epitaxy growth of Sb-detector epiwafers on 100 mm diameter GaSb substrates in a multi-wafer production format. The growth process has been established to address the challenges of these demanding structures, including the large numbers of alternating thin layers and mixed group-V elements. Various characterization techniques demonstrate excellent surface morphology, crystalline structure quality, and optical properties of the epiwafers. The measured wafer-to-wafer consistency and cross-wafer uniformity demonstrate the potential for volume manufacturing.

  18. Simple self-gettering differential-pump for minimizing source oxidation in oxide-MBE environment

    SciTech Connect

    Kim, Yong-Seung; Bansal, Namrata; Oh, Seongshik

    2011-07-15

    Source oxidation of easily oxidizing elements such as Ca, Sr, Ba, and Ti in an oxidizing ambient leads to their flux instability and is one of the biggest problems in the multielemental oxide molecular beam epitaxy technique. Here, the authors report a new scheme that can completely eliminate the source oxidation problem: a self-gettering differential pump using the source itself as the pumping medium. The pump simply comprises a long collimator mounted in front of the source in extended port geometry. With this arrangement, the oxygen partial pressure near the source was easily maintained well below the source oxidation regime, resulting in a stabilized flux, comparable to that of an ultrahigh-vacuum environment. Moreover, this pump has a self-feedback mechanism that allows a stronger pumping effectiveness for more easily oxidizing elements, which is a desired property for eliminating the source oxidation problem.

  19. Factors affecting the shape of MBE-grown laterally aligned Fe nanowires

    NASA Astrophysics Data System (ADS)

    Lok, Shu K.; Tian, Jia C.; Wang, Yuxing; Lai, Ying H.; Lortz, Rolf; Petrovic, Alexander; Panagopoulos, Christos; Wong, George K. L.; Wang, Gan; Sou, Iam K.

    2012-12-01

    Various microstructural and chemical analysis techniques were applied to study two types (type-A and B) of self-assembled laterally aligned Fe nanowires (NWs) fabricated by molecular beam epitaxy on a ZnS buffer layer. The formation of the three-dimensional shapes of these NWs was found to be driven by the principle of surface energy minimization. We have provided phenomenological models to address the factors affecting the observed topological shape of these NWs, including the role of the lattice relationship between the Fe NWs and the underlying buffer layer, growth temperature, Fe nominal coverage and substrate orientation. Magnetic hysteresis measurements were performed at different temperature, demonstrating the Fe NWs possess a coercivity about 30 times larger than that of a Fe thin film. The observed gradual magnetization reversal indicates the magnetization process is accomplished by the rotation of magnetic moments within a single domain.

  20. Direct observation of interface asymmetry in GaAs-AlAs superlattices grown by MBE.

    NASA Astrophysics Data System (ADS)

    McCartney, M.; Menéndez, J.; Pfeiffer, L. N.; West, K. W.

    1996-03-01

    Transmission electron microscopy techniques have been applied to the study of compositional profiles in (GaAs)_6(AlAs)6 superlattices grown by Molecular Beam Epitaxy. Cross-sectional samples in [100] and [110] orientations were used in both high-resolution and diffraction contrast imaging. Comparisons were made with simulated images computed from theoretically predicted compositional profiles. In samples grown at temperatures below 450 ^circC, the shape of the compositional profiles is found to be consistent with Ga surface segregation models. If Ga segregates to the AlAs surface, the direct (AlAs on GaAs) interface is predicted to be broad due to the penetration of Ga atoms into the AlAs layers. The indirect interface is expected to be sharper because Al does not segregate to the GaAs surface. The microscopy results are consistent with Raman experiments on the same samples.(G.S. Spencer, J. Menéndez, L.N. Pfeiffer, and K.W. West, Phys. Rev. B 52), 8205 (1995).

  1. Studies on the nucleation of MBE grown III-nitride nanowires on Si

    NASA Astrophysics Data System (ADS)

    Yanxiong, E.; Hao, Zhibiao; Yu, Jiadong; Wu, Chao; Wang, Lai; Xiong, Bing; Wang, Jian; Han, Yanjun; Sun, Changzheng; Luo, Yi

    2017-01-01

    Not Available Project supported by the National Basic Research Program of China (Grant No. 2013CB632804), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004, and 61307024), and the High Technology Research and Development Program of China (Grant No. 2012AA050601).

  2. Surface defect states in MBE-grown CdTe layers

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz

    2014-02-21

    Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

  3. Factors affecting the shape of MBE-grown laterally aligned Fe nanowires.

    PubMed

    Lok, Shu K; Tian, Jia C; Wang, Yuxing; Lai, Ying H; Lortz, Rolf; Petrovic, Alexander; Panagopoulos, Christos; Wong, George K L; Wang, Gan; Sou, Iam K

    2012-12-07

    Various microstructural and chemical analysis techniques were applied to study two types (type-A and B) of self-assembled laterally aligned Fe nanowires (NWs) fabricated by molecular beam epitaxy on a ZnS buffer layer. The formation of the three-dimensional shapes of these NWs was found to be driven by the principle of surface energy minimization. We have provided phenomenological models to address the factors affecting the observed topological shape of these NWs, including the role of the lattice relationship between the Fe NWs and the underlying buffer layer, growth temperature, Fe nominal coverage and substrate orientation. Magnetic hysteresis measurements were performed at different temperature, demonstrating the Fe NWs possess a coercivity about 30 times larger than that of a Fe thin film. The observed gradual magnetization reversal indicates the magnetization process is accomplished by the rotation of magnetic moments within a single domain.

  4. Crystal Lattice Defects in MBE Grown Si Layers Heavily Doped with Er

    NASA Astrophysics Data System (ADS)

    Zakharov, N. D.; Werner, P.; Vdovin, V. I.; Denisov, D. V.; Sobolev, N. A.; Gösele, U.

    The main types of crystal structure defects in [Er]>2×1019 doped layers are: (i) spherical Er and (ii) ellipsoidal ErSi precipitates, as well as (iii) ErSi2 platelets on {111} planes. In the sample with [Er]=4x1019, small complexes consisting of tiny Er precipitates and four petals of ErSi2 platelets have been found additionally. The layer with [Er]= 8×1018 cm-3 was defect free. The formation of silicides from a supersaturated solid solution and Er precipitates is accompanied by the emission of vacancies V resulting in the formation of pores, V-V and V-Er complexes.

  5. In Memory of Dorothy Heathcote, MBE (29 August 1926 to 8 October 2011)

    ERIC Educational Resources Information Center

    Saxton, Juliana; Miller, Carole

    2012-01-01

    In this article, the authors aim to provide a multifaceted lens on to Dorothy Heathcote's enormous influence on the field of drama education. They choose to order the reminiscences historically, focusing on Heathcote's consistency of passion and purpose. The anecdotes, lesson descriptions, and reminiscences capture her voice, her energy, and her…

  6. MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates

    NASA Astrophysics Data System (ADS)

    de Lyon, T. J.; Rajavel, R. D.; Nosho, B. Z.; Terterian, S.; Beliciu, M. L.; Patterson, P. R.; Chang, D. T.; Boag-O'Brien, M. F.; Holden, B. T.; Jacobs, R. N.; Benson, J. D.

    2010-07-01

    An investigation of the heteroepitaxial growth of HgCdTe films onto InSb(211)B substrates is reported. High-quality HgCdTe(211)B single-crystal films have been successfully deposited onto InSb(211)B substrates and have been characterized with x-ray diffraction rocking curve analysis, etch pit density analysis, and surface void defect mapping. X-ray rocking curve (422) reflection full-width at half-maximum of 60 arcsec has been obtained for 7- μm-thick x = 0.22 HgCdTe epitaxial films, and etch pit densities of 3 × 106 cm-2 to 3 × 107 cm-2 have been observed. A significant reduction in HgCdTe void defect densities to 100 cm-2 to 200 cm-2 has been observed on InSb, including a complete absence of large “void cluster” defects that are often observed for growth on CdZnTe. Wafer bow induced by the growth of HgCdTe on InSb is less than 1 μm for 2-inch-diameter substrates. Significant diffusion of In into HgCdTe is observed for HgCdTe/InSb wafers that are subjected to Hg anneals at 250°C to 300°C. A preliminary investigation of the transfer of HgCdTe films from InSb onto Si substrates has also been undertaken, using an adhesive wafer bonding approach evaluated with scanning acoustic microscopy. The infrared transmission characteristics of the bonding adhesive have been investigated with respect to postgrowth annealing procedures to establish the compatibility of the bonding approach with HgCdTe device processing and detector operation.

  7. On the origin and elimination of macroscopic defects in MBE films

    NASA Astrophysics Data System (ADS)

    Wood, C. E. C.; Rathbun, L.; Ohno, H.; DeSimone, D.

    1981-02-01

    Spitting of group III metal droplets from Knudsen type effusion cells has been found culpable for a genre of problematical macroscopic surface topographical defects observed in the growth of semiconductor films by molecular beam epitaxy. Successful precautions are described which virtually eliminate the problem.

  8. III-N light emitting diodes fabricated using RF nitrogen gas source MBE

    NASA Astrophysics Data System (ADS)

    Van Hove, J. M.; Carpenter, G.; Nelson, E.; Wowchak, A.; Chow, P. P.

    1996-07-01

    Homo- and heterojunction III-N light emitting diodes using RF atomic nitrogen plasma molecular beam epitaxy have been grown. GaN films deposited on sapphire using this growth technique exhibited an extremely sharp X-ray diffraction with a full width half maximum of 112 arc sec. p-type doping of the nitride films was done with elemental Mg and resulted in as-grown p-type material with resistivities as low as 2 Ω · cm. Both homo- and heterojunction LEDs showed clear rectification. Emission from the GaN homojunction deposited on n-type SiC was peaked at 410 nm while the AlGaNGaN(Zn)AlGaN double heterojunction LEDs emission was centered about 520 nm.

  9. Development of MBE II-VI Epilayers on GaAs(211)B

    DTIC Science & Technology

    2012-10-01

    Surface morphologies were examined by Nomarski and atomic force microscopy. Near-surface chemistry was performed using x-ray photoelectron spectroscopy...lower than measured by the noncontact thermocouple as stated in this article. RESULTS We started our investigation by examining the quality of current... force microscopy (AFM) images for as-received (a) and chemical defect decorated (b)16 GaAs. Polishing damage on a >5 nm scale is visible in Fig. 1a

  10. Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

    NASA Technical Reports Server (NTRS)

    Lieneweg, U.; Bean, J. C.

    1984-01-01

    Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

  11. Formation of pyramid-like nanostructures in MBE grown Si films on Si(001)

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Garzon, L.; Rodriguez-Cañas, E.; Munuera, Carmen; Esteban-Betegon, F.; Varela del Arco, Maria; Ocal, Carmen; Alonso, Maria; Ruiz, Ana

    2010-01-01

    The growth of Si homoepitaxial layers on Si(001) substrates by molecular beam epitaxy is analyzed for a set of growth conditions in which diverse nanometric scale features develop. Using Si substrates prepared by exposure to HF vapor and annealing in ultra high vacuum, a rich variety of surface morphologies is found for different deposited layer thicknesses and substrate temperatures in a reproducible way, showing a critical dependence on both. Arrays of 3D islands (truncated pyramids), percolated ridge networks and square pit (inverted pyramids) distributions are observed. We analyze the obtained arrangements and find remarkable similarities to other semiconductor though heteroepitaxial systems. The nano-scale entities (islands or pits) display certain self assembly and ordering, concerning size, shape and spacing. Film growth sequence follows the islands-coalescence-2D growth pathway, eventually leading to optimum flat morphologies for high enough thickness and temperature.

  12. Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

    NASA Astrophysics Data System (ADS)

    Nikiforov, A. I.; Timofeev, V. A.; Tuktamyshev, A. R.; Yakimov, A. I.; Mashanov, V. I.; Gutakovskii, A. K.

    2017-01-01

    Gradual relaxation of elastic deformations in a silicon layer at the growth of a covering layer on strained layers was established. The dependence of the thickness of a silicon film, where full elastic strain relaxation occurs, on the germanium layer thickness was determined. The dependence of the critical thickness of 2D-3D transition of temperature and composition of the GeSiSn film on Si(100) was studied. Regularities of the formation of multilayer structures on quantum wells comprising pseudomorphous GeSiSn layers without relaxed buffer layers but creating the structures directly on Si. A possibility of synthesizing multilayer structures by molecular beam epitaxy was shown, and the crystal lattice constants using the high-resolution transmission electron microscopy were determined. Based on multilayer GeSiSn/Si structures the p-i-n-diodes, which demonstrated the photoresponse increasing by several orders of magnitude compared to the Sn-free structures at an increase in the Sn content, were created.

  13. Characteristics of multivalent impurity doped C 60 films grown by MBE

    NASA Astrophysics Data System (ADS)

    Nishinaga, Jiro; Aihara, Tomoyuki; Kawaharazuka, Atsushi; Horikoshi, Yoshiji

    2007-04-01

    Metal-doped C 60 films (aluminum, gallium and germanium) are grown on GaAs and quartz glass substrates by solid source molecular beam epitaxy. Mechanical and optical properties of the films are investigated by Vickers hardness test and photoluminescence (PL) measurement. Vickers hardness values of all the impurity-doped C 60 films are considerably enhanced. PL peaks of the electron transition between the highest occupied molecular orbital and the lowest unoccupied molecular orbital states of C 60 molecules are confirmed in Al-doped and Ga-doped C 60 films, but not in Ge-doped C 60 films. Optimized bonding structures of these impurity atoms to C 60 molecules are determined by using ab initio calculations. Stable covalent bonds between impurities and C 60 molecules are verified to be formed. The impurity atoms may act as bridges between C 60 molecules. The distortion of C 60 cages due to the bonding with metals is confirmed. In the Al- and Ga-doped C 60 films, this distortion probably makes the dipole forbidden transition relieved. The binding energies are found to be related to the experimentally determined Vickers hardness.

  14. MBE growth of self-assisted InAs nanowires on graphene

    NASA Astrophysics Data System (ADS)

    Kang, Jung-Hyun; Ronen, Yuval; Cohen, Yonatan; Convertino, Domenica; Rossi, Antonio; Coletti, Camilla; Heun, Stefan; Sorba, Lucia; Kacman, Perla; Shtrikman, Hadas

    2016-11-01

    Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived.

  15. Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth

    NASA Astrophysics Data System (ADS)

    Ageev, Oleg A.; Solodovnik, Maxim S.; Balakirev, Sergey V.; Mikhaylin, Ilya A.; Eremenko, Mikhail M.

    2017-01-01

    The molecular beam epitaxial growth of GaAs on the GaAs(001)-(2×4) surface is investigated using a kinetic Monte Carlo-based method. The developed algorithm permits to focus on the kinetic effects in a wide range of growth conditions and enables considerable computational speedup. The simulation results show that the growth rate has a dramatic influence upon both the island morphology and Ga surface diffusion length. The average island size reduces with increasing growth rate while the island density increases with increasing growth rate as well as As4/Ga beam equivalent pressure ratio. As the growth rate increases, the island density becomes weaker dependent upon the As4/Ga pressure ratio and approaches to a saturation value. We also discuss three characteristics of Ga surface diffusion, namely a diffusion length of a Ga adatom deposited first, an average diffusion length, and an island spacing as an average distance between islands. The calculations show that the As4/Ga pressure ratio dependences of these characteristics obey the same law, but with different coefficients. An increase of the As4/Ga pressure ratio leads to a decrease in both the diffusion length and island spacing. However, its influence becomes stronger with increasing growth rate for the first Ga adatom diffusion length and weaker for the average diffusion length and for the island spacing.

  16. Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

    NASA Astrophysics Data System (ADS)

    Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

    2009-03-01

    Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

  17. Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

    SciTech Connect

    Ramesh, Ramamoorthy; Uecker, Reinhard , Germany); Doolittle, W. Alan; Reiche, P. , Germany); Liu, Zi-Kui; Bernhagen, Margitta , Germany); Tian, Wei; Ihlefeld, Jon F.; Schlom, Darrell G.

    2008-08-01

    BiFeO3 thin films have been deposited on (101) DyScO3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds. Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3/(100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [1120] BiFeO3 [1120] GaN (SiC) plus a twin variant related by a 180{sup o} in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.

  18. MBE Growth of CdTe and Hg sub 1-x Cd sub x Te Films and Multilayer Structures.

    DTIC Science & Technology

    2014-09-26

    K. Ridley, Solid State Electronics 27(2), 113 (1984). 3. R. F. C. Farrow, G. R. Jones, G. M. Williams, and 1. M. Young, AppI . Phys. Lett. 39, 954...R. F. C. Farrow, W. J. Takei, F. A. Shirland, and A. J. Noreika, J. AppI . Phys. 55(12), 4225 (1984). 8. G. M. Williams, C. R. Whitehouse, N. G. Chew... Appi . Phys. 55. 4225 (1984). The critical role of growth-related parameters including ’Z. C. Feng, A. Masicarenhas. W. J. Choyke. R. F. C. Farrow, F

  19. Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy

    NASA Astrophysics Data System (ADS)

    Beaudoin, M.; Lewis, R. B.; Andrews, J. J.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; O'Leary, S. K.; Tiedje, T.

    2015-09-01

    The bandedge optical properties of GaAsBi films, as thick as 470 nm, with Bi content varying from 0.7% Bi to 2.8% Bi grown by molecular beam epitaxy on GaAs substrates are measured by photoluminescence (PL) and photothermal deflection spectroscopy (PDS). The PDS spectra were fit with a modified Fernelius model which takes into account multiple reflections within the GaAsBi layer and GaAs substrate. Three undoped samples and two samples that are degenerately doped with silicon are studied. The undoped samples show a clear Urbach absorption edge with a composition dependent bandgap that decreases by 56 meV/% Bi and a composition independent Urbach slope parameter of 25 meV due to absorption by Bi cluster states near the valence band. The doped samples show a long absorption tail possibly due to absorption by gap states and free carriers in addition to a Burstein-Moss bandgap shift. PL of the undoped samples shows a lower energy emission peak due to defects not observed in the usually available thin samples (50 nm or less) grown under similar conditions.

  20. Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis

    NASA Astrophysics Data System (ADS)

    den Hertog, M.; Elouneg-Jamroz, M.; Bellet-Amalric, E.; Bounouar, S.; Bougerol, C.; André, R.; Genuist, Y.; Poizat, J. P.; Kheng, K.; Tatarenko, S.

    2011-05-01

    ZnSe nanowire growth has been successfully achieved on ZnSe (1 0 0) and (1 1 1)B buffer layers deposited on GaAs substrates. Cubic [1 0 0] oriented ZnSe nanowires or [0 0 0 1] oriented hexagonal NWs are obtained on (1 0 0) substrates while [1 1 1] oriented cubic mixed with [0 0 0 1] oriented hexagonal regions are obtained on (1 1 1)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements.

  1. Hilda Mary Woods MBE, DSc, LRAM, FSS (1892–1971): reflections on a Fellow of the Royal Statistical Society

    PubMed Central

    Farewell, Vern; Johnson, Tony; Gear, Rosemary

    2012-01-01

    We have previously described the content of a text by Woods and Russell, An Introduction to Medical Statistics, compared it with Principles of Medical Statistics by Hill and set both volumes against the background of vital statistics up until 1937. The two books mark a watershed in the history of medical statistics. Very little has been recorded about the life and career of the first author of the earlier textbook, who was a Fellow of the Royal Statistical Society for at least 25 years, an omission which we can now rectify with this paper. We describe her education, entry into medical statistics, relationship with Major Greenwood and her subsequent career and life in Ceylon, Kenya, Australia, England and South Africa. PMID:22973076

  2. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    NASA Astrophysics Data System (ADS)

    Kesaria, M.; de la Mare, M.; Krier, A.

    2016-11-01

    Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e1-hh1) and electron-light hole (e1-lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D *  =  1.25  ×  109 cm Hz1/2 W-1.

  3. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures.

    PubMed

    Wofford, Joseph M; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J Lopes, J Marcelo

    2017-02-27

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials.

  4. Two-dimensional superconductivity realized in an MBE-grown Bi2 Te3 /FeTe heterostructure

    NASA Astrophysics Data System (ADS)

    He, Qing Lin; Liu, Hongchao; He, Mingquan; Lai, Ying Hoi; He, Hongtao; Wang, Gan; Law, Kam Tuen; Lortz, Rolf; Wang, Jiannong; Sou, Iam Keong

    2014-03-01

    We report a superconductivity realized at the interface of a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy using the molecular beam epitaxy technique, which appears even when the thickness of Bi2Te3 is as thin as one quintuple layer. The two-dimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky-Kosterlitz-Thouless transition and the diverging ratio of in-plane to out-plane upper critical field on approaching the superconducting transition temperature. The underlying mechanism of this interfacial superconductivity will be discussed. The heterostructure studied in this work provides an ideal platform with unconventional superconductivity for hosting Majorana fermions and studying their exotic physics. The work described here was substantially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (project No. 604910, 605011, AOE/P-04/08-3, 605512 and 603010).

  5. MBE Growth of InN/GaN(0001) and Shape Transitions of InN islands

    NASA Astrophysics Data System (ADS)

    Cao, Yongge; Xie, Maohai; Liu, Ying; Ng, Y. F.

    2003-03-01

    Plasma-assisted molecular-beam epitaxial growth of InN on GaN(0001) is investigated. Both layer-by-layer and Stranski-Krastanov (SK) growth modes are observed under different growth windows. Strain relaxation is studied by real-time recording of the in-plane lattice spacing evolutions on RHEED pattern, which suggest a gradual relaxation of the strain in InN film commenced during the first bilayer (BL) deposition and almost completed after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations. Based on statistical analysis, the shape transitions of 3D islands are firstly observed in the III-nitrides system. The InN islands transform gradually from pyramids to platelets with increasing of In flux. Under In-rich growth condition, the reverse trend of island shape evolution dependence on volume size, compared with Equilibrium Crystal Shape (ECS) theory, is induced by the Indium self-surfactant effects, in which Indium adlayer on the top surface of InN islands will depress the thermodynamic driving force for the vertical growth of 3D islands. Lateral growth of 3D islands is not only the result of kinetic process but also favored by thermodynamics while Indium self-surfactant exist.

  6. Defect studies in MBE grown GaSb{sub 1−x}Bi{sub x} layers

    SciTech Connect

    Segercrantz, N.; Kujala, J.; Tuomisto, F.; Slotte, J.; Song, Y.; Wang, S.

    2014-02-21

    Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb{sub 1−x}Bi{sub x} on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0–0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.

  7. The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

    NASA Astrophysics Data System (ADS)

    Ji, Lian; Tan, Ming; Ding, Chao; Honda, Kazuki; Harasawa, Ryo; Yasue, Yuya; Wu, Yuanyuan; Dai, Pan; Tackeuchi, Atsushi; Bian, Lifeng; Lu, Shulong; Yang, Hui

    2017-01-01

    Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87-13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 °C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile "activator" - beryllium (Be) atom in p-type InGaAsP.

  8. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    SciTech Connect

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  9. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

    PubMed Central

    Wofford, Joseph M.; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J. Lopes, J. Marcelo

    2017-01-01

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials. PMID:28240323

  10. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  11. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... good character and citizens of the United States. An entity need not demonstrate potential for success... AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.202 How does an entity qualify as...

  12. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... good character and citizens of the United States. An entity need not demonstrate potential for success... AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.202 How does an entity qualify as...

  13. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... who are of good character and citizens of the United States. (a) Ownership and control. An entity must... AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.203 How does an entity qualify as...

  14. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... who are of good character and citizens of the United States. (a) Ownership and control. An entity must... AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.203 How does an entity qualify as...

  15. Influence of Defects in HgCdTe Grown by Molecular Beam Epitaxy (MBE) on Electrical Devices

    DTIC Science & Technology

    1992-11-30

    be of type I or type II configuration since they are energetically almost equivalent (Fig. 2). Therefore, twin boundaries will exist after island...will also reveal the presence of twin boundaries as illustrated in Fig. 4. It can be seen that the triangular pits are rotated by 180° from one domain...grown material. The increase in the acceptor level could be explained by the presence of numerous (111)A planes in the twin boundaries and antiphase

  16. 40 CFR 33.211 - What is the process for appealing or challenging an EPA MBE or WBE certification determination?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.211 What is the... Protection Agency, 1200 Pennsylvania Avenue, NW., Mail Code 1230T, Washington, DC 20460. (c) The appeal...

  17. 40 CFR 33.211 - What is the process for appealing or challenging an EPA MBE or WBE certification determination?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.211 What is the... Protection Agency, 1200 Pennsylvania Avenue, NW., Mail Code 1230T, Washington, DC 20460. (c) The appeal...

  18. Photo-carrier and Electronic Studies of Silicon-Doped GaAs Grown by MBE Using PCR

    NASA Astrophysics Data System (ADS)

    Villada, J. A.; Jiménez-Sandoval, S.; López-López, M.; Mendoza, J.; Espinosa-Arbeláez, D. G.; Rodríguez-García, M. E.

    2010-05-01

    Photo-carrier radiometry (PCR) has been used to study the distribution of impurities and the lattice damage in silicon-doped gallium arsenide in a noncontact way. The results from the PCR study are correlated with Hall effect measurements. Samples for this study were grown by molecular beam epitaxy. Of all possible parameters that can be manipulated, the silicon effusion cell temperature was the only one that was varied, in order to obtain samples with different silicon concentrations. The distribution of impurities was obtained by scanning the surface of each sample. The PCR amplitude and phase images were obtained as a function of the x- y position. According to the PCR images, it is evident that the impurities are not uniformly distributed across the sample. From these images, the average value of the amplitude and phase data across the surface was obtained for each sample in order to study the PCR signal behavior as a function of the silicon effusion cell temperature.

  19. AFM Quantitative Morphological Analysis Of The Step Bunching Instability Formed On GaAs(110) During H-assisted MBE

    NASA Astrophysics Data System (ADS)

    Crespillo, M. L.; Tejedor, P.

    2007-04-01

    Power Spectral Density (PSD) analysis of Atomic Force Microscopy (AFM) images has been applied to study the effect of H-assisted surface oxide cleaning on the step bunching and Bales-Zangwill instabilities that develop during homoepitaxial growth from molecular beams of Ga and As4 on vicinal GaAs(110) substrates at high temperatures and high As:Ga flux ratios, leading to the formation of a characteristic ripple pattern along the [001] tilt direction. As growth proceeds in the presence of chemisorbed H, step bunching gradually vanishes and the ripple pattern breaks up into an array of self-organized nanowires running along the [11¯0] step edge direction.

  20. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    DOE PAGES

    Fluegel, Brian; Alberi, Kirstin; Reno, John; ...

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

  1. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films

    NASA Astrophysics Data System (ADS)

    Wood, Adam W.; Collar, Kristen; Li, Jincheng; Brown, April S.; Babcock, Susan E.

    2016-03-01

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs1-x Bi x using high angle annular dark field (‘Z-contrast’) imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ˜GaAs embedded in the GaAs1-x Bi x epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (˜4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ˜GaAs to GaAs1-x Bi x appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ˜25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs1-x Bi x film growth.

  2. Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE

    DTIC Science & Technology

    2001-06-01

    Gorbenko 6, W. Passenberg2 , H. Kuenzel 2 , N. Grote 2, V. M. Ustinov1 , H. Kirmse 3 , W. Neuman 3 , P. Werner 4, N. D. Zakharov 4, D. Bimberg 5 and Zh. I...Phys’. 84, 6409 (1998). [9] S. Sato and S. Satoh, J. Cryst. Growth 192, 381 (1998). [10] B. .Soshnikov, A. M. Gorbenko , A. P . Golubok and N. N

  3. A Complexity Approach toward Mind-Brain-Education (MBE); Challenges and Opportunities in Educational Intervention and Research

    ERIC Educational Resources Information Center

    Steenbeek, Henderien W.; van Geert, Paul L. C.

    2015-01-01

    In the context of an educational or clinical intervention, we often ask questions such as "How does this intervention influence the task behavior of autistic children?" or "How does working memory influence inhibition of immediate responses?" What do we mean by the word "influence" here? In this article, we introduce…

  4. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... the implementing regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR... defined by section 8(a)(6) of the Small Business Act (15 U.S.C. 637(a)(6)) and its implementing... AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN...

  5. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13 CFR... section 8(a)(6) of the Small Business Act (15 U.S.C. 637(a)(6)) and its implementing regulations (13 CFR... AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN...

  6. 75 FR 52001 - Agency Information Collection Activities; Submission to OMB for Review and Approval; Comment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-24

    ... Request; Minority Business Enterprise/ Woman Business Enterprise (MBE/WBE) Utilization Under Federal... Protection Agency, MBE/WBE ] Utilization Under Federal Grants, Cooperative Agreements, and Interagency... Enterprise/Woman Business Enterprise (MBE/ WBE) Utilization Under Federal Grants, Cooperative Agreements,...

  7. High-Output-Power Densities from MBE-grown n- and p-Type PbTeSe-based Thermoelectrics via Improved Contact Metallization

    DTIC Science & Technology

    2011-10-19

    7 - Au, Sn, Zn, Pb, In, Ag , Ti, Cr, Sb, W, Ni, Fe, Cu, Al, and Ge [5-15]. In most cases the contact resistivity values were worse (higher) than...probe, thermoelement, and Cu heat sink were connected electrically in series to a load resistance (length of Ag coated Cu wire), and the power output·was...cleaning on: (a) adsorbed oxygen,. (b) adsorbed carbon, (c) Sn and SnO , and (d) Te and Te{h. Atomic hydrogen cleaned at a substrate temperature of

  8. Research Initiative (RI) Proposal to Enhance Oxide MBE Growth through Facilitization of an Ozone Source and Oxygen Resistant Zn Effusion Cell

    DTIC Science & Technology

    2014-02-11

    2211 Oxides, Oxide Semiconductors, ZnO , MgZnO REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10. SPONSOR/MONITOR’S ACRONYM(S...University of Central Florida 12201 Research Parkway, Suite 501 Orlando, FL 32826-3246 Key Words: Oxides, Oxide semiconductors, ZnO , MgZnO...an ozone system and are positioned to advance our national understanding of the value of ozone growth of ZnO and related compounds in comparison to

  9. 40 CFR 33.210 - Does an entity certified as an MBE or WBE by EPA need to keep EPA informed of any changes which...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... certification, an affidavit sworn to by the entity's owners before a person who is authorized by state law to... of an affidavit sworn to by the applicant before a person who is authorized by State law...

  10. 40 CFR 33.210 - Does an entity certified as an MBE or WBE by EPA need to keep EPA informed of any changes which...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... certification, an affidavit sworn to by the entity's owners before a person who is authorized by state law to... of an affidavit sworn to by the applicant before a person who is authorized by State law...

  11. 40 CFR 33.210 - Does an entity certified as an MBE or WBE by EPA need to keep EPA informed of any changes which...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... certification, an affidavit sworn to by the entity's owners before a person who is authorized by state law to... of an affidavit sworn to by the applicant before a person who is authorized by State law...

  12. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    SciTech Connect

    Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

  13. Influence of the interface layer on the strain relaxation of ZnSe epitaxial layers grown by MBE on (001)GaAs

    NASA Astrophysics Data System (ADS)

    Giannini, C.; Carlino, E.; Sciacovelli, P.; Tapfer, L.; Sauvage-Simkin, M.; Garreau, Y.; Jedrecy, N.; Véron, M. B.; Pinchaux, R.

    1999-05-01

    ZnSe epilayers grown by molecular beam epitaxy on GaAs(001) substrates are investigated by grazing incidence x-ray diffraction, reciprocal space mapping and transmission electron microscopy. Our data show that the Zn/Se beam pressure ratio employed during the early stages of the ZnSe growth (2 nm) strongly affects the structural properties of the overgrown stoichiometric epilayer. The different strain status of the interface (tensile and compressive for the Zn-rich and Se-rich interfaces, respectively) is directly involved in the defects evolution mechanism. While the same order of magnitude of 60° dislocations was measured in all the specimens, three orders of magnitude more stacking-faults were measured in samples with a Zn-rich interface with respect to those with a Se-rich interface. In addition, a contraction of the lattice parameter towards the sample surface along the growth direction is observed only in the sample grown with an excess of Se at the interface. This lattice gradient can be explained by the presence of point defects within the II-VI epilayer thickness. The formation of point defects could be favoured by the presence of the Se-rich compressive strained interface.

  14. Behavior of temperature dependent electrical properties of Pd/Au Schottky contact to GaN grown on Si substrate by MBE

    NASA Astrophysics Data System (ADS)

    Singh Nirwal, Varun; Rao Peta, Koteswara

    2016-12-01

    We investigated the effect of temperature on the behavior of electrical properties of Pd/Au Schottky contact to GaN/Si (111) in the temperature range of 125-325 K in steps of 25 K using current-voltage (I-V) and capacitance-voltage (C-V) analysis. The Schottky barrier height (ϕ I-V ) and ideality factor is calculated using standard thermionic emission theory. The value of ϕ I-V was found to increase from 0.41 ± 0.002 eV to 0.79 ± 0.008 eV when temperature varied from 125 to 325 K. The ideality factor of diodes also decreased from 5.91 ± 0.01 to 1.03 ± 0.05 with increase in temperature. The series resistance (R s) is calculated using Cheung’s method and it is observed that the value of R s decreased from 74.40 ± 0.32 Ω to 58.59 ± 0.11 Ω when the temperature increased from 125 to 325 K. Barrier height (ϕ C-V ) and effective carrier concentration (Nd ) is also reported from C-V characteristics as a function of temperature and the value of ϕ C-V was found to decrease with increase in temperature. The behavior of barrier heights obtained from I-V and C-V characteristics is different due to difference in the nature of measurement techniques. The deviation of conventional Richardson’s constant from theoretical value of GaN is due to unusual behavior of temperature dependent electrical properties and barrier inhomogeneity. This is successfully explained by assuming the double Gaussian distribution of inhomogeneous barrier heights of Au/Pd/GaN/Si Schottky diode.

  15. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth.

  16. Critical thickness of MBE-grown Ga 1-xIn xSb ( x<0.2) on GaSb

    NASA Astrophysics Data System (ADS)

    Nilsen, T. A.; Breivik, M.; Selvig, E.; Fimland, B. O.

    2009-03-01

    Several Ga 1-xIn xSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate rotation, or a tilted sample position with no substrate rotation. The GaInSb layers were examined by X-ray diffraction (XRD) using both symmetrical and asymmetrical reflections. The "tilted sample method" gave a variation of ±25% in thickness of the Ga 1-xIn xSb layers, while the indium (In) content varied by ±10% around the nominal value. The disappearance of thickness fringes in 004 XRD scans was used to determine the onset of relaxation, as determining the in-plane lattice constant for tilted samples was found to be difficult. Determining residual strain in samples grown by the tilted method was likewise found to be very difficult. The critical thickness for several In mole fractions between 5% and 19% was determined and was found to be from 2.2 to 2.7 times higher than predicted by Matthews and Blakeslee (1974) [J. Crystal Growth 27 (1974) 118] but lower than that predicted by People and Bean (1985) [Appl. Phys. Lett. 47 (1985) 322].

  17. Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

    NASA Astrophysics Data System (ADS)

    Skierbiszewski, C.; Siekacz, M.; Perlin, P.; Feduniewicz-Żmuda, A.; Cywiński, G.; Grzegory, I.; Leszczyński, M.; Wasilewski, Z. R.; Porowski, S.

    2007-07-01

    Plasma-assisted molecular beam epitaxy (PAMBE) has recently emerged as a viable tool for production of nitride blue-violet laser diodes operating at room temperature in continuous wave mode and high output powers [C. Skierbiszewski, P. Wisniewski, M. Siekacz, P. Perlin, A. Feduniewicz-Zmuda, G. Nowak, I. Grzegory, M. Leszczynski, S. Porowski, Appl. Phys. Lett. 88 (2006) 221108]. The present work reviews the current state of the art in this program as well as discusses its future directions. Two elements are given particular attention: (1) the epitaxial growth in metal-rich conditions, which enables effective lateral diffusion of N adatoms at low growth temperatures and (2) the role of threading dislocations in destabilizing the growth front. Low-temperature growth by PAMBE on dislocation-free GaN substrates is instrumental in achieving high performance of optoelectronic structures. The inherent to this process capability of sustaining two-dimensional step-flow growth mode (with straight and parallel atomic steps) at low growth temperatures opens up the way to the growth of strained multilayer structures with no compositional fluctuations and with flat interfaces.

  18. Development of MBE grown Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

    NASA Technical Reports Server (NTRS)

    Miller, M. D.

    1981-01-01

    Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on BaF2 substrates. Methods for crystal growth, crystal transfer, and device fabrication by photolithographic techniques were developed. The lasers operate in the spectra range from 10 microns to 14 microns and at temperatures from 12K to 60K continuous wave and to 95 K pulsed.

  19. DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs

    NASA Astrophysics Data System (ADS)

    Kaniewska, M.; Sadowski, J.; Guziewicz, M.

    2004-07-01

    The thermal emission rate of dominant traps in molecular beam epitaxial n- and p-type AlGaAs subjected to Ar-ion beam etching has been studied by deep level transient spectroscopy. Emission signatures were determined and compared with results obtained by other authors for irradiation induced and grown-in defects in GaAs and AlGaAs. The most significant result of this study is the observation that the process-induced defects in n- as well as p-type AlGaAs exhibit emission signatures, which are characteristic of native defects found in GaAs. The effect is discussed in terms of a compensation effect and related band bending.

  20. Ohio State University Cooperative Research and Development Agreement (CRDA). Crystal Growth by Molecular Beam Epitaxy (MBE) and Characterization of Optoelectronic Devices

    DTIC Science & Technology

    2003-10-01

    Packaging, Sociedade Brasileira de Microelectronica and International Microelectronic and Packaging Society, Campinas, Brazil, 1999. [5] C. M. Warnky...ing the weights of a laser’s spatial modes including curve fitting,5 matrix inversion ,6,7 M2 analysis,8 fre- quency mixing,9 and coherence

  1. Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma[Electron Cyclotron Resonance-Molecular Beam Epitaxy

    SciTech Connect

    Araki, Tsutomu; Chiba, Yasuo; Nanishi, Yasushi

    2000-07-01

    GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnar structure was formed in the GaN layer grown with hydrogen on Ga-polar template.

  2. Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film

    SciTech Connect

    Novikov, V. A. Grigoryev, D. V.

    2015-03-15

    Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.

  3. Luminescence Study of Ion-Implanted and MBE-Grown Er-Doped GaAs and A1(x)Ga(1-x)As

    DTIC Science & Technology

    1993-03-01

    Semiconductors," Phys. Rev. B. 4E (3): 1423-1428 (July 1992). M . Salvi, H. L’Harridon, P. N. Favennec, D. Moutonne:, M . Gauneau, and M . Kechouane . "A...normal coordinates: H = M (p2 + M2w2q2), 0 2 where p = Mdu/dt and q = u = R - P,. The basic assumption of the CC diagram is that the effect of the electronic...also found two different processes involved in the temperature quenching of Yb3+. Klein (1988] fitted the PL intensity to an expression of the form I M

  4. MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances

    NASA Astrophysics Data System (ADS)

    Cordier, Y.; Semond, F.; Lorenzini, P.; Grandjean, N.; Natali, F.; Damilano, B.; Massies, J.; Hoël, V.; Minko, A.; Vellas, N.; Gaquière, C.; DeJaeger, J. C.; Dessertene, B.; Cassette, S.; Surrugue, M.; Adam, D.; Grattepain, J.-C.; Aubry, R.; Delage, S. L.

    2003-04-01

    In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability.

  5. Increased bismuth concentration in MBE GaAs{sub 1−x}Bi{sub x} films by oscillating III/V flux ratio during growth

    SciTech Connect

    Wood, Adam W. Babcock, Susan E.; Li, Jincheng; Brown, April S.

    2015-05-15

    The authors have examined bismuth concentration profiles in GaAs{sub 1−x}Bi{sub x} films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in conjunction with x-ray diffraction. Samples were grown with a gradient in each of the component fluxes, and therefore, the III/V ratio across the substrate. Rotating the sample during growth exposed the growth surface to an oscillating III/V flux ratio. Sinusoidal [Bi] profiles resulted in the growth direction, the wavelength and number of which were consistent with the growth rate and the rate of substrate rotation. However, the magnitude of [Bi] in the observed fluctuations was greater than the maximum [Bi] achieved using the same Bi flux and Ga/As flux ratios in steady-state conditions on a stationary substrate, suggesting that varying the III/V flux ratio during growth promotes the incorporation of Bi in GaAs{sub 1−x}Bi{sub x} films. A proposed qualitative model for how this enhancement might occur hypothesizes a critical role for alternating growth and shrinkage of Ga-Bi predroplet clusters on the surface as the growing material is rotated through Ga-rich and As-rich flux compositions.

  6. Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE

    SciTech Connect

    Aabdin, Z.; Peranio, N.; Winkler, M.; Bessas, D.; König, J.; Hermann, R.P.; Böttner, H.; Eibl, O.

    2012-10-23

    Sb{sub 2}Te3 and Bi{sub 2}Te3 thin films were grown on SiO{sub 2} and BaF{sub 2} substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250 C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb{sub 2}Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10{sup 19} cm{sup -3}, large thermopower (130 {micro}V K{sup -1}), large charge carrier mobility (402 cm{sup 2} V{sup -1} s{sup -1}), and resulting large power factor (29 {micro}W cm{sup -1} K{sup -2}). Bi{sub 2}Te3 films also showed low charge carrier density (2.7 x 10{sup 19} cm{sup -3}), moderate thermopower (-153 {micro}V K{sup -1}), but very low charge carrier mobility (80 cm{sup 2} V{sup -1} s{sup -1}), yielding low power factor (8 {micro}W cm{sup -1} K{sup -2}). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM.

  7. Application of the ALE and MBE Methods to the Growth of Layered Hg sub x Cd sub 1-x Te Films.

    DTIC Science & Technology

    1986-09-26

    grain - boundary structures. GaAs is an attrac- tive alternative because large-area wafers of high structural _ ALE CdTe (11, perfection [dislocation...single-crystal X-ray diffracto- metry Nomarsky microscopy, Auger and ESCA spectroscopy, Rutherford backscattering and Hall mobility measurements...high growth rate observed. dow) position by a rotating part, most of the boundary layer will be sheared off by a fixed plate placed above the rotating

  8. MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

    DTIC Science & Technology

    1987-12-31

    and 3. T. NI. Wotherspoon. J. Phys. D 12, LI 117 (1979). ( 100) orientation, whereas p-type Hg, - Cd.Te layers are T~ P. Faune . J1. Reno, S...parameters are well con- ’J. P. Faune and A. Million. ]. Cryst. Growth 54. 582 (198 1) trolled, the quality of Hg1 - Cd.Te grown in both the ’J. P... Faune and A. Million. AppI. Phys. Lett- 41, 264 (1982). ( Ill ) B and the ( 100) orientations is comparable, thus giv- J P. Faurie. S. Sivananthan. NI

  9. GaAs/AlGaAs Electronics and InGaAs(P) Optoelectronics on InP Substrates by Gas Source MBE

    DTIC Science & Technology

    1989-02-12

    EMENTARY NOTATION 7. COSATI CODES 18. SUBjECT TERMS (Cor.nuew’ n m n"if nmnsay and Wtft by blo00 ftmbtf) FIELD GROUP SUB-GROUP 19. ABSTRACT (Contin. an r...HBTs on InP (about 30) is found to be generally smaller that that from AIGaAs/Ga.As HBT on GaAs. PL studies of the GaAs buffer layer of a field ...to model and analyze the long-channel MESFETs, the saturation of electron velocity due to high electric field has been taken into consideration in

  10. CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth

    PubMed Central

    2011-01-01

    We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the coverage of 5.1 Å and found to have different structures. Atomic models of nuclei of both hut species have been built as well as models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of a wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. A pyramid grows without phase transitions. A structure of its vertex copies the nucleus. Transitions between hut species turned out to be impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet follows the paired dimer model. Further growth of hut arrays results in domination of wedges, and the density of pyramids exponentially drops. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL at coverages ~14 Å. Nanocrystalline Ge 2D layer begins forming at coverages >14 Å. PMID:21711886

  11. CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth.

    PubMed

    Arapkina, Larisa V; Yuryev, Vladimir A

    2011-04-15

    We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the coverage of 5.1 Å and found to have different structures. Atomic models of nuclei of both hut species have been built as well as models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of a wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. A pyramid grows without phase transitions. A structure of its vertex copies the nucleus. Transitions between hut species turned out to be impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet follows the paired dimer model. Further growth of hut arrays results in domination of wedges, and the density of pyramids exponentially drops. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL at coverages ~14 Å. Nanocrystalline Ge 2D layer begins forming at coverages >14 Å.

  12. Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE

    PubMed Central

    2012-01-01

    Critical thicknesses of two-dimensional to three-dimensional growth in GexSi1−x layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the GexSi1−x layers are characterized by the formation of (2 × n) reconstruction. We measured n for all layers of Ge/GexSi1−x/Ge heterosystem using our software with respect to the video recording of reflection high-energy electron diffraction (RHEED) pattern during growth. The n reaches a minimum value of about 8 for clear Ge layer, whereas for GexSi1−x films, n is increased from 8 to 14. The presence of a thin strained film of the GexSi1−x caused not only the changes in critical thicknesses of the transitions, but also affected the properties of the germanium nanocluster array for the top Ge layer. Based on the RHEED data, the hut-like island form, which has not been previously observed by us between the hut and dome islands, has been detected. Data on the growth of Ge/GexSi1−x/Ge heterostructures with the uniform array of islands in the second layer of the Ge film have been received. PMID:23043796

  13. Multistage nucleation of two-dimensional Si islands on Si(111)-7x7 during MBE growth: STM experiments and extended rate-equation model

    SciTech Connect

    Filimonov, Sergey; Cherepanov, Vasily; Voigtlaender, Bert; Hervieu, Yuri

    2007-07-15

    The submonolayer density of two-dimensional (2D) islands in Si/Si(111)-7x7 molecular beam epitaxy is measured using scanning tunneling microscopy. At a relatively low deposition temperature of 673 K, the density of 2D islands is a power function of the deposition flux N{sub 2D}{proportional_to}F{sup {chi}} with the exponent {chi}=0.24 being smaller than that predicted by the standard nucleation theory. The nonstandard scaling of the 2D island density is explained by the multistage character of the nucleation process on the Si(111)-7x7 surface which involves consecutive stages of formation of stable Si clusters, formation of pairs of clusters, and transformation of the cluster pairs to 2D islands. Using an extended rate-equation model, we analyze the temperature and growth rate dependencies of the density of single clusters, cluster pairs, and 2D islands and show that an activation barrier of {approx}1.26 eV delays the transformation of cluster pairs to 2D islands. The delayed transformation of cluster pairs to 2D islands is the reason for the nonstandard scaling of the 2D island density observed at low deposition temperatures.

  14. Heavy Ion Fusion Accelerator Research (HIFAR) half-year report, October 1, 1989--March 31, 1990

    SciTech Connect

    Not Available

    1990-03-01

    This report discusses the following topics: Transverse Emittance Studies on MBE-4; MBE-4 Simulations; Beam Centroid Motion and Misalignments in MBE-4; Survey and Alignment of MBE-4; Energy Analysis of the 5mA MBE-4 Beam; An Improved 10 mA Ion Source for MBE-4; Emittance Degradation via a Wire Grid; Ion Source Development; 2 MV Injector; Electrostatic Quadrupole Prototype Development Activity; Magnetic Induction Core Studies; A Preliminary Consideration of Beam Splitting in Momentum Space; and Status of the Optimization Code HILDA.

  15. Quantenwelt im Nanozylinder: Elektronische Eigenschaften von Kohlenstoff-Nanoröhrchen

    NASA Astrophysics Data System (ADS)

    Strunk, Christoph

    2005-07-01

    Kohlenstoff-Nanoröhren sind einzelne oder mehrfach ineinander gesteckte molekulare Hohlzylinder. In ihnen bilden Kohlenstoffatome ein Graphit ähnliches Kristallgitter. Diese Fullerene zeichnen sich durch eine außerordentlich hohe Elastizität und Zugfestigkeit aus. In ihren elektronischen Eigenschaften verhalten sie sich entweder wie Halbleiter oder wie metallische Leiter. Aus halbleitenden Nanoröhren konnten bereits winzige Feldeffekttransistoren hergestellt werden, ein erster Schritt hin zu einer molekularen Elektronik. Die Grundlagenforscher interessiert vor allem das Verhalten metallischer Nanoröhren bei tiefen Temperaturen. An ihren elektronischen Systemen lassen sich zum Beispiel Quanteninterferenzphänomene oder Elektron-Elektron-Wechselwirkungen untersuchen.

  16. Mind, Brain, and Education: A Transdisciplinary Field

    ERIC Educational Resources Information Center

    Knox, Rockey

    2016-01-01

    The emerging field of mind, brain, and education (MBE) is grappling with core issues associated with its identity, scope, and method. This article examines some of the most pressing issues that structure the development of MBE as a transdisciplinary effort. Rather than representing the ongoing debates in MBE as superficial squabbles to eventually…

  17. Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

    NASA Astrophysics Data System (ADS)

    Jum'h, I.; Abd El-Sadek, M. S.; Al-Taani, H.; Yahia, I. S.; Karczewski, G.

    2017-02-01

    Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current-voltage ( I- V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I- V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

  18. Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

    SciTech Connect

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-05-15

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performed by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.

  19. Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

    SciTech Connect

    Aleshin, A. N. Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

    2015-08-15

    The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for the (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.

  20. Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-11-01

    A technique is proposed for the determining the parameters of the equivalent circuit elements in strong inversion mode using the measurement results of the admittance of MIS structures based on n-Hg0.775Cd0.225Te grown by molecular beam epitaxy. It is shown that at 77 K and frequencies above 10 kHz, the capacitancevoltage characteristics of MIS structures based on n-Hg0.775Cd0.225Te with a near-surface graded gap layer have a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level of intrinsic semiconductor. It is established that the electron concentration in the near-surface graded-gap layer exceeds an average concentration found by the Hall method by more than 2 times. The proposed technique was used for determining the temperature dependences of the insulator capacitance, capacitance and differential resistance of the space-charge region, and capacitance of the inversion layer in MIS structures based on n-Hg0.775Cd0.225Te without a graded-gap layer. The temperature and voltage dependences of the parameters of the equivalent circuit elements in strong inversion are calculated. The results of calculation are qualitatively consistent with the results obtained from the measurements of the admittance.

  1. Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi[subscript 2]Te[subscript 3] and Sb[subscript 2]Te[subscript 3] thin films

    SciTech Connect

    Peranio, N.; Winkler, M.; Bessas, D.; Aabdin, Z.; König, J.; Böttner, H.; Hermann, R.P.; Eibl, O.

    2012-10-23

    Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3} thin films were grown at room temperature on SiO{sub 2} and BaF{sub 2} substrates using molecular beam epitaxy. A layer-by-layer growth was achieved such that metallic layers of the elements with 0.2 nm thickness were deposited. The layer structure in the as-deposited films was confirmed by X-ray diffraction and was seen more clearly in Sb{sub 2}Te{sub 3} thin films. Subsequent annealing was done at 250 C for 2 h and produced the Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3} crystal structure as confirmed by high-energy X-ray diffraction. This preparation process is referred to as nano-alloying and it was demonstrated to yield single-phase thin films of these compounds. In the thin films a significant texture could be identified with the crystal c axis being almost parallel to the growth direction for Sb{sub 2}Te{sub 3} and tilted by about 30{sup o} for Bi{sub 2}Te{sub 3} thin films. In-plane transport properties were measured for the annealed films at room temperature. Both films yielded a charge carrier density of about 2.6 x 10{sup 19} cm{sup -3}. The Sb{sub 2}Te{sub 3} films were p-type, had a thermopower of +130 {micro}V K{sup -1}, and surprisingly high mobilities of 402 cm{sup 2} V{sup -1} s{sup -1}. The Bi{sub 2}Te{sub 3} films were n-type, showed a thermopower of -153 {micro}V K{sup -1}, and yielded significantly smaller mobilities of 80 cm2 V{sup -1} s{sup -1}. The chemical composition and microstructure of the films were investigated by transmission electron microscopy (TEM) on cross sections of the thin films. The grain sizes were about 500 nm for the Sb{sub 2}Te{sub 3} and 250 nm for the Bi{sub 2}Te{sub 3} films. In the Bi{sub 2}Te{sub 3} thin film, energy-filtered TEM allowed to image a Bi-rich grain boundary phase, several nanometers thick. This secondary phase explains the poor mobilities of the Bi{sub 2}Te{sub 3} thin film. With these results the high potential of the nano-alloying deposition technique for growing films with a more complex layer architecture is demonstrated.

  2. Morphological and Structural Investigation of the Early Stages of Epitaxial Growth of Alpha-Fe2O3 (0001) on Alpha-Al2O3 (0001) by Oxygen-Plasma-Assisted MBE

    SciTech Connect

    Yi, Sang I.; Liang, Yong ); Thevuthasan, Theva ); Chambers, Scott A. )

    1999-01-01

    We have investigated the early stages of Alpha-Fe2O3 (0001) film growth on Alpha-Al2O3 (0001) using oxygen-plasma-enhanced molecular beam epitaxy along with reflection high-energy electron diffraction, noncontact atomic force microscopy, and x-ray photoelectron spectroscopy and diffraction. A compressionally-strained, fully-stoichiometric Alpha-Fe2O3 film three monolayers thick forms prior to the onset of three-dimensional island formation and lattice relaxation. The surface of this film appears to buckle along <1120>, giving rise to a new set of inwardly-contracted diffraction spots which, if not resolved from the substrate spots, could be interpreted as a 12% in-plane lattice parameter expansion. Such an interpretation has led prior investigator to conclude that the interfacial layer consists of a disordered cation layer with an in-plane lattice parameter {approx}6% larger than that of Alpha-Fe2O3[4]. Our interpretation of the diffraction data suggests that the interfacial layer is badly distorted, but commensurate with the substrate.

  3. A simple prediction score system for malignant brain edema progression in large hemispheric infarction

    PubMed Central

    Jo, KwangWook; Bajgur, Suhas S.; Kim, Hoon; Choi, Huimahn A.; Huh, Pil-Woo; Lee, Kiwon

    2017-01-01

    Malignant brain edema (MBE) due to hemispheric infarction can result in brain herniation, poor outcomes, and death; outcome may be improved if certain interventions, such as decompressive craniectomy, are performed early. We sought to generate a prediction score to easily identify those patients at high risk for MBE. 121 patients with large hemispheric infarction (LHI) (2011 to 2014) were included. Patients were divided into two groups: those who developed MBE and those who did not. Independent predictors of MBE were identified by logistic regression and a score was developed. Four factors were independently associated with MBE: baseline National Institutes of Health Stroke Scale (NIHSS) score (p = 0.048), Alberta Stroke Program Early Computed Tomography Score (ASPECTS) (p = 0.007), collateral score (CS) (p<0.001) and revascularization failure (p = 0.013). Points were assigned for each factor as follows: NIHSS ≤ 8 (= 0), 9–17 (= 1), ≥ 18 (= 2); ASPECTS≤ 7 (= 1), >8 (= 0); CS<2 (= 1), ≥2 (= 0); revascularization failure (= 1),success (= 0). The MBE Score (MBES) represents the sum of these individual points. Of 26 patients with a MBES of 0 to 1, none developed MBE. All patients with a MBES of 6 developed MBE. Both MBE development and functional outcomes were strongly associated with the MBES (p = 0.007 and 0.002, respectively). The MBE score is a simple reliable tool for the prediction of MBE. PMID:28178299

  4. Superlattice Optical Bistability Research.

    DTIC Science & Technology

    2014-09-26

    These superlattices are grown by molecular beam epitaxy in a MBE system specifically designed to handle mercury . MBE is an ultrahigh vacuum evaporative...multilayer heterojunction and superlattice device applications. 2.0 Growth Studies The MBE growth of mercury compound is still relatively new and novel...CdTe. The growth of HgTe, however, was complicated by the high volatily of mercury . A large amount of mercury flux must be maintained to compensate

  5. Effect of different stages of tensile deformation on micromagnetic parameters in high-strength, low-alloy steel

    SciTech Connect

    Vaidyanathan, S.; Moorthy, V.; Kalyanasundaram, P.; Jayakumar, T.; Raj, B.

    1999-08-01

    The influence of tensile deformation on the magnetic Barkhausen emissions (MBE) and hysteresis loop has been studied in a high-strength, low-alloy steel (HSLA) and its weldment. The magnetic measurements were made both in loaded and unloaded conditions for different stress levels. The root-mean-square (RMS) voltage of the MBE has been used for analysis. This study shows that the preyield and postyield deformation can be identified from the change in the MBE profile. The initial elastic deformation showed a linear increase in the MBE level in the loaded condition, and the MBE level remained constant in the unloaded condition. The microplastic yielding, well below the macroyield stress, significantly reduces the MBE, indicating the operation of grain-boundary dislocation sources below the macroyield stress. This is indicated by the slow increase in the MBE level in the loaded condition and the decrease in the MBE level in the unloaded condition. The macroyielding resulted in a significant increase in the MBE level in the loaded condition and, more clearly, in the unloaded condition. The increase in the MBE level during macroyielding has been attributed to the grain rotation phenomenon, in order to maintain the boundary integrity between adjacent grains, which would preferentially align the magnetic domains along the stress direction. This study shows that MBE during tensile deformation can be classified into four stages: (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding, and (4) progressive plastic deformation. A multimagnetic parameter approach, combining the hysteresis loop and MBE, has been suggested to evaluate the residual stresses.

  6. Heavy Ion Fusion Accelerator Research (HIFAR) year-end report, April 1, 1986-September 30, 1986

    SciTech Connect

    Not Available

    1986-10-01

    Activities are reported on MBE-4, the four-beam proof-of-principle ion induction linear accelerator with the capability of beam-current amplification. Mechanical aspects of MBE-4, quadrupole insulator performance, and pulsers are discussed. The computer code, SLID, has been used to help understand the longitudinal beam dynamics in MBE-4. A computer-controlled emittance scanning system is in use in MBE-4. A systematic effort is under way to discover and correct all the defects peculiar to the low energy part of the linac design code. (LEW)

  7. Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples

    NASA Astrophysics Data System (ADS)

    Rubinger, R. M.; Bezerra, J. C.; Chagas, E. F.; González, J. C.; Rodrigues, W. N.; Ribeiro, G. M.; Moreira, M. V. B.; de Oliveira, A. G.

    1998-10-01

    Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 °C and the planar-doped layer with a nominal silicon concentration of 3.4×1012cm-2. The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10-12 s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers.

  8. Proceedings of the NATO Advanced Study Institute on Physics and Applications of Quantum Wells and Superlattices Held in Erice, Italy on 21 April - 1 May 1987. Series B. Volume 170

    DTIC Science & Technology

    1987-05-01

    C 2H5 )3, Al(CH3) 3 ’ In(CH3)3 etc. In this so-called metalorganic (MO) MBE / 87 / or chemical beam epitaxy ( CBE ) / 88 / the metalorganic flows...etc. With the advent of gas-source MBE and MO MBE, also called CBE ( chemical beam epitaxy ), the gap between the techniques of MBE and low-pressure MO... Chemical beam epitaxy ( CBE ), Carrier concentration (see 66 also Carrier density) Chemical vapor deposition, 4 in doped wells,

  9. Heavy Ion Fusion Accelerator Research (HIFAR) year-end report, April 1, 1989--September 30, 1989

    SciTech Connect

    Not Available

    1989-12-01

    This report contains the following topics on heavy ion fusion: MBE-4 drifting beam quadrupole operating range; transverse emittance growth in MBE-4; an improved ion source for MBE-4; drifting beam studies on MBE-4; 2-MV injector; improvements in lifetime of the C{sup +} source; injector control system; Maxwell spark gap test update; ILSE cosine 2{theta} quadrupole magnet development; electrostatic quadrupole prototype development activity; induction accelerator cell development; effect of a spread in beamlet currents on longitudinal stability; and heavy ion linac driver analysis.

  10. Evaluation of "Maths by Email." Final Report

    ERIC Educational Resources Information Center

    Kissane, Barry; McConney, Andrew

    2010-01-01

    "Maths by Email" (MbE) is a free fortnightly email newsletter produced through a partnership between CSIRO Education and the Australian Mathematical Sciences Institute (AMSI), with funding from the Australian Government Department of Education, Employment and Workplace Relations (DEEWR). The principal aim of MbE has been "to…

  11. Communication in Mind, Brain, and Education: Making Disciplinary Differences Explicit

    ERIC Educational Resources Information Center

    Kalra, Priya; O'Keeffe, Jamie K.

    2011-01-01

    Difficulties in communication within Mind, Brain, and Education (MBE) can arise from several sources. One source is differences in orientation among the areas of research, policy, and practice. Another source is lack of understanding of the entrenched and unspoken differences across research disciplines in MBE--that is, recognition that research…

  12. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  13. Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists

    NASA Astrophysics Data System (ADS)

    Varanasi, Pushkara R.; Cornett, Kathleen M.; Lawson, Margaret C.

    2000-06-01

    In our attempts to develop etch resistance 248 nm positive resists, we have designed and synthesized thermally stable and acid sensitive methylbenzyl ether (MBE) protected poly(hydroxystyrene) derivatives. Results presented in this paper clearly illustrate that the MBE protecting group provides superior etch resistance to conventional carbonate, ester and acetal/ketal based protecting groups. It is also shown that the MBE protecting group is thermally stable and undergoes acid catalyzed deprotection leading to preferential rearrangement products due to electrophilic ring substitution. Such a rearrangement is shown to provide a unique mechanism to reduce/eliminate resist shrinkage and improve lithographic performance.

  14. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    NASA Technical Reports Server (NTRS)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  15. Heavy Ion Fusion Accelerator Research (HIFAR)

    SciTech Connect

    Not Available

    1991-04-01

    This report discusses the following topics: emittance variations in current-amplifying ion induction lina; transverse emittance studies of an induction accelerator of heavy ions; drift compression experiments on MBE-4 and related emittance; low emittance uniform- density C{sub s}+ sources for heavy ion fusion accelerator studies; survey of alignment of MBE-4; time-of-flight dependence on the MBE-4 quadrupole voltage; high order calculation of the multiple content of three dimensional electrostatic geometries; an induction linac injector for scaled experiments; induction accelerator test module for HIF; longitudinal instability in HIF beams; and analysis of resonant longitudinal instability in a heavy ion induction linac.

  16. Heavy ion fusion half year report, October 1, 1984-March 30, 1985

    SciTech Connect

    Not Available

    1985-06-01

    Summaries of research are given for each of the following experiments: (1) MBE-4: a four-beam induction linac experiment, (2) performance of the MBE-4 injector, (3) design procedure for acceleration and bunching in an induction linac, (4) longitudinal dynamics of MBE-4, (5) transverse beam dynamics, (6) envelope functions of high-current beam, (7) electrostatic energy analyzer, (8) longitudinal beam control, (9) a capacitive beam-charge monitor for SBTE, (10) materials R and D, (11) simulations of Robertson's lens, and (12) SBTE high sigma/sub 0/ high-current stability limits. (MOW)

  17. EPA Form 5700‑52A: United States Environmental Protection Agency Minority Business Enterprise/Woman Business Enterprise Utilization under Federal Grants and Cooperative Agreements

    EPA Pesticide Factsheets

    MBE/WBE utilization is based on 40 CFR Part 33. EPA Form 5700-52A must be completed by recipients of Federal grants, cooperative agreements, or other Federal financial assistance which involve procurement of supplies, equipment, construction, etc.

  18. Silicon surface preparation for III-V molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Madiomanana, K.; Bahri, M.; Rodriguez, J. B.; Largeau, L.; Cerutti, L.; Mauguin, O.; Castellano, A.; Patriarche, G.; Tournié, E.

    2015-03-01

    We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ process is composed of cycles of HF dip and O2 plasma treatments. Ellipsometry and atomic force microscopy performed after each step during the substrate preparation reveal surface cleaning and de-oxidation. The in situ treatment consists in flash annealing the substrate in the MBE chamber prior to epitaxial growth. GaSb-based multiple quantum well heterostructures emitting at 1.55 μm were grown by MBE on Si substrates prepared by different methods. Structural characterizations using XRD and TEM coupled with photoluminescence spectroscopy demonstrates the efficiency of our preparation process. This study thus unravels a simple and reproducible protocol to prepare the Si surface prior to III-V MBE.

  19. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  20. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Potin, V.; Hahn, E.; Rosenauer, A.; Gerthsen, D.; Kuhn, B.; Scholz, F.; Dussaigne, A.; Damilano, B.; Grandjean, N.

    2004-02-01

    We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local and average In concentrations and the In distribution in the quantum wells were determined using the digital analysis of lattice images (DALI) method based on the evaluation of HRTEM lattice-fringe images. Similar lateral fluctuations of the In concentration were observed in MBE- and MOVPE-grown samples. The In concentration varies on a small scale (In-rich clusters with lateral extensions below 4 nm) and on a larger scale of a few 10 nm, which is attributed to phase separation. In contrast, the In distribution in growth direction differs significantly in the MBE and MOVPE samples which is explained by different In-segregation efficiencies and In desorption before the GaN cap layer deposition during MBE.

  1. 8-9 and 14-15 meu Two-Color 640x486 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

    NASA Technical Reports Server (NTRS)

    Guanapala, S.; Bandara, S.; Singh, A.; Liu, J.; Rafol, S.; Luong, E.; Mumolo, J.; Tran, N.; Vincent, J.; Shott, C.; Long, J.; LeVan, P.

    1999-01-01

    An optimized long-wavelength two-color Quantum Well Infrared Phototdetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).

  2. 10. VIEW TO NORTHWEST; OBLIQUE VIEW OF SOUTH END OF ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. VIEW TO NORTHWEST; OBLIQUE VIEW OF SOUTH END OF MBE BUILDING (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  3. 40. VIEW TO WEST; EAST FRONT YARD MASTER'S OFFICE, INSIDE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    40. VIEW TO WEST; EAST FRONT YARD MASTER'S OFFICE, INSIDE GARAGE, SECOND FLOOR, MBE BUILDING (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  4. 1. VIEW TO SOUTH; RAMP AND WEST FRONT MAIL, BAGGAGE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    1. VIEW TO SOUTH; RAMP AND WEST FRONT MAIL, BAGGAGE AND EXPRESS BUILDING (MBE) IN RELATION TO TERMINAL BUILDING (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  5. 19. VIEW TO SOUTHEAST, NORTH SIDE RETAINING WALL; WEST FRONT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    19. VIEW TO SOUTHEAST, NORTH SIDE RETAINING WALL; WEST FRONT MBE BUILDING, FIRST FLOOR (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  6. 12. VIEW TO NORTHWEST; OBLIQUE VIEW OF SOUTH END OF ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. VIEW TO NORTHWEST; OBLIQUE VIEW OF SOUTH END OF MBE BUILDING AND ADJOINING TRACK SHED (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  7. 9. VIEW TO NORTH; SOUTH RETAINING WALL AND SOUTH FACADE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    9. VIEW TO NORTH; SOUTH RETAINING WALL AND SOUTH FACADE OF MBE BUILDING (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  8. 8. VIEW TO NORTHEAST; OBLIQUE VIEW OF SOUTH END OF ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    8. VIEW TO NORTHEAST; OBLIQUE VIEW OF SOUTH END OF MBE BUILDING (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  9. 7. VIEW TO EAST; WEST FACADE OF SOUTH END OF ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    7. VIEW TO EAST; WEST FACADE OF SOUTH END OF MBE BUILDING (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  10. 75 FR 15413 - Notice of the Establishment of a National Advisory Council on Minority Business Enterprise and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-29

    ... successfully access the domestic and global marketplace. These policy issues may include, but are not limited...'' industries; Global and domestic barriers and impediments; Global and domestic business opportunities; MBE capacity building; Institutionalizing global business curriculums at colleges and universities...

  11. 23 CFR 230.202 - Definitions.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a) Minority... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE),...

  12. Minority Business Enterprises and Woman Business Enterprises Grant Utilization

    EPA Pesticide Factsheets

    The policy goal of the MBE/WBE Programs is to assure that minority business enterprises and woman business enterprises are given the opportunity to participate in contract and procurement for supplies, construction, equipment & services under any EPA grant

  13. 75 FR 81635 - Privacy Act of 1974: Notice of New System of Records, Single Family Computerized Homes...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... receives CHUMS data for statistical research. The Computerized Homes Underwriting Management System... other Federal agencies, including the Federal Reserve, for purposes of statistical research, not... Enterprise (MBE) Code, and sex, for statistical tracking purposes) of builders, fee appraisers, and...

  14. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  15. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Goldman, J. A.; Brennan, K.

    1988-01-01

    During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

  16. Research in the Optical Sciences

    DTIC Science & Technology

    1994-02-01

    Semiconductor Structures D. Sarid , M. Gallagher and T. Ruskell ....................................... 49 Propagation of Short Optical Pulses in Passive...optical microscope was developed and tested. High quality single-crystal layers of beryllium were grown on germanium by molecular beam epitaxy (MBE...exam February 12. RESEARCH FINDINGS "This year we continued our study of epitaxial beryllium growth using molecular beam epitaxy (MBE). We were

  17. Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

    DTIC Science & Technology

    2006-05-31

    is encapsulated within thin barium titanate (BTO) dielectric layers for enhanced charge trapping at phosphor-dielectric interface. A high density...XRD). Fig. 3 illustrates the XRD spectra for the 4 15 min IGE and 60 min MBE GaN samples . The inserts of Fig. 3 show SEM microphotographs of both... samples grown using various 3 20 min IGE and 60 min MBE on Si substrates. Above bandgap PL was measured at room temperature under 325nm HeCd laser

  18. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  19. An Investigation into the Effect of High-Power Pulse IR Radiation on the Properties of Surfaces of CdxHg1-хTe Heteroepitaxial Layers

    NASA Astrophysics Data System (ADS)

    Boltar', K. O.; Burlakov, I. D.; Voitsekhovskii, А. V.; Sizov, А. L.; Sredin, V. G.; Talipov, N. Kh.; Shul'ga, S. А.

    2013-12-01

    The results of investigations into radiation modification of surfaces of Cd x Hg1- x Te (CMT) heteroepitaxial layers grown by molecular-beam and liquid-phase epitaxy (MBE- and LPE CMT HEL) affected by high-power pulse short-wavelength IR radiation are discussed. It is found that the surfaces of MBE CMT HEL and LPE CMT are enhanced by mercury as a result of high-power pulse short-wavelength IR radiation.

  20. Perceptions and Practices of Mass Bat Exposure Events in the Setting of Rabies Among U.S. Public Health Agencies.

    PubMed

    Hsu, C H; Brown, C M; Murphy, J M; Haskell, M G; Williams, C; Feldman, K; Mitchell, K; Blanton, J D; Petersen, B W; Wallace, R M

    2017-03-01

    Current guidelines in the setting of exposures to potentially rabid bats established by the Advisory Committee on Immunization Practices (ACIP) address post-exposure prophylaxis (PEP) administration in situations where a person may not be aware that a bite or direct contact has occurred and the bat is not available for diagnostic testing. These include instances when a bat is discovered in a room where a person awakens from sleep, is a child without an adult witness, has a mental disability or is intoxicated. The current ACIP guidelines, however, do not address PEP in the setting of multiple persons exposed to a bat or a bat colony, otherwise known as mass bat exposure (MBE) events. Due to a dearth of recommendations for response to these events, the reported reactions by public health agencies have varied widely. To address this perceived limitation, a survey of 45 state public health agencies was conducted to characterize prior experiences with MBE and practices to mitigate the public health risks. In general, most states (69% of the respondents) felt current ACIP guidelines were unclear in MBE scenarios. Thirty-three of the 45 states reported prior experience with MBE, receiving an average of 16.9 MBE calls per year and an investment of 106.7 person-hours annually on MBE investigations. PEP criteria, investigation methods and the experts recruited in MBE investigations varied between states. These dissimilarities could reflect differences in experience, scenario and resources. The lack of consistency in state responses to potential mass exposures to a highly fatal disease along with the large contingent of states dissatisfied with current ACIP guidance warrants the development of national guidelines in MBE settings.

  1. Comparison of Epitaxial Growth Techniques for III-V Layer Structures

    DTIC Science & Technology

    1992-05-22

    FOR Ill-V LAYER STRUCTURES DTIC byS ELECTE G. B. STRINGFELLOW MAY 2 819S2 A Prepared for Publication in the Proceedings of croissance de cristaux et de...epitaxial growth techniques have been used for semiconductors, including liquid phase epitaxy (LPE), chloride vapor phase epitaxy (CIVPE) using...MBE (GSMBE), organometallic MBE (OMMBE or MOMBE), and chemical beam epitaxy (CBE). II. LIQUID PHASE EPITAXY The first technique listed, LPE, was one of

  2. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures

    DTIC Science & Technology

    2015-03-30

    electrical characteristics. Both large-area chemical vapor - deposited (CVD) single-crystalline h-BN layers and h-BN microflakes mechanically cleaved from a...dimensional (2D) van der Waals (vdW) materials for the realization of novel quantum electronic states. We employed molecular beam epitaxy (MBE) combined with...novel quantum electronic states. We employed molecular beam epitaxy (MBE) combined with nanofabrication techniques to form functional nanostructures

  3. Effect of tensile deformation on micromagnetic parameters in 0.2% carbon steel and 2.25Cr-1Mo steel

    SciTech Connect

    Moorthy, V.; Vaidyanathan, S.; Jayakumar, T.; Raj, B.; Kashyap, B.P.

    1999-04-23

    The influence of prior tensile deformation on the magnetic Barkhausen emission (MBE) and the hysteresis (B-H) curve has been studied in 0.2% carbon steel and 2.25Cr-1Mo steel under different tempered conditions. This study shows that the micromagnetic parameters can be used to identify the four stages of deformation, namely (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding and (4) progressive plastic deformation. However, it is observed that the MBE profile shows more distinct changes at different stages of tensile deformation than the hysteresis curve. It has been established that the beginning of microplastic yielding and macroyielding can be identified from the MBE profile which is not possible from the stress-strain plot. The onset of microplastic yielding can be identified from the decrease in the MBE peak height. The macroyielding can be identified from the merging of the initially present two-peak MBE profile into a single central peak with relatively higher peak height and narrow profile width. The difference between the variation of MBE and hysteresis curve parameters with strain beyond macroyielding indicates the difference in the deformation state of the surface and bulk of the sample.

  4. Inelastic processes in atomic collisions involving ground state and laser-prepared atoms

    NASA Astrophysics Data System (ADS)

    Planje, Willem Gilles

    1999-11-01

    In dit proefschrift worden experimenten beschreven waarbij ionen of atomen met een bepaalde snelheid op een ensemble van doelwitatomen worden gericht. Wanneer twee deeltjes elkaar voldoende genaderd hebben, vindt er wissel- werking plaats waarbij allerlei processen kunnen optreden. Deze processen resulteren in specieke eindproducten. Kennis over de interactie tussen twee botsingspartners wordt verkregen door te bekijken welke eindproducten ontstaan, en in welke mate. Een belangrijke grootheid die van invloed is op mogelijke processen is de onderlinge snelheid van de twee kernen, oftewel de botsingssnelheid. Wanneer de botsingssnelheid voldoende klein is dan kunnen de verschillende reactiemechanismen zowel kwalitatief als kwanti- tatief vaak goed voorspeld worden door het systeem te beschouwen als een kort-stondig molecuul, opgebouwd uit de twee botsende deeltjes. De ver- schillende processen die kunnen optreden worden gekwaliceerd afhankelijk van de vorming van bepaalde eindproducten. Ruwweg de volgende indeling kan gemaakt worden: 1. de interne structuur van de eindproducten zijn identiek aan die van de beginproducten. We spreken dan van een elastische botsing. 2. e en van de deeltjes of beiden worden in een aangeslagen toestand ge- bracht (of ge¨oniseerd). Dit zijn processen waarbij de herschikte elek- tronen zich bij de oorspronkelijke kern bevinden. We spreken dan van excitatie of ionisatie. 3. e en of meerdere elektronen bevinden zich bij de andere kern na de botsing (eventueel in aangeslagen toestand). We spreken dan van elek- tronenoverdracht. In het eerste deel van deze dissertatie worden botsingsexperimenten tussen heliumionen en natriumatomen beschreven waarbij het proces van elek- tronenoverdracht wordt onderzocht. Bij dit mechanisme is het buitenste 117?Samenvatting natriumelektron betrokken. Deze kan relatief gemakkelijk `overspringen' naar het heliumion wanneer deze zich dicht in de buurt van het natrium- atoom bevindt. Het elektron kan hierbij een

  5. Comparison of total water vapor column from GOME-2 on MetOp-A against ground-based GPS measurements at the Iberian Peninsula.

    PubMed

    Román, R; Antón, M; Cachorro, V E; Loyola, D; Ortiz de Galisteo, J P; de Frutos, A; Romero-Campos, P M

    2015-11-15

    Water vapor column (WVC) obtained by GOME-2 instrument (GDP-4.6 version) onboard MetOp-A satellite platform is compared against reference WVC values derived from GPS (Global Positioning System) instruments from 2007 to 2012 at 21 places located at Iberian Peninsula. The accuracy and precision of GOME-2 to estimate the WVC is studied for different Iberian Peninsula zones using the mean (MBE) and the standard deviation (SD) of the GOME-2 and GPS differences. A direct comparison of all available data shows an overestimation of GOME-2 compared to GPS with a MBE of 0.7 mm (10%) and a precision quantified by a SD equals to 4.4mm (31%). South-Western zone presents the highest overestimation with a MBE of 1.9 mm (17%), while Continental zone shows the lowest SD absolute value (3.3mm) due mainly to the low WVC values reached at this zone. The influence of solar zenith angle (SZA), cloud fraction (CF), and the type of surface and its albedo on the differences between GOME-2 and GPS is analyzed in detail. MBE and SD increase when SZA increases, but MBE decreases (taking negative values) when CF increases and SD shows no significant dependence on CF. Under cloud-free conditions, the differences between WVC from GOME-2 and GPS are within the WVC error given by GOME-2. The changes of MBE and SD on Surface Albedo are not so evident, but MBE slightly decreases when the Surface Albedo increases. WVC from GOME-2 is, in general, more precise for land than for sea pixels.

  6. Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Staddon, C. R.; Foxon, C. T.; Luckert, F.; Edwards, P. R.; Martin, R. W.; Kent, A. J.

    2011-05-01

    We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced GaN layers up to 100 μm in thickness. Thick, undoped, cubic GaN films were grown on semi-insulating GaAs (0 0 1) substrates by a modified plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The resulting free-standing GaN wafers may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have demonstrated that the PA-MBE process, we had developed, also allows us to achieve free-standing zinc-blende AlxGa1-xN wafers.

  7. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  8. The Ciprofloxacin Impact on Biofilm Formation by Proteus Mirabilis and P. Vulgaris Strains

    PubMed Central

    Kwiecinska-Pirog, Joanna; Skowron, Krzysztof; Bartczak, Wojciech; Gospodarek-Komkowska, Eugenia

    2016-01-01

    Background Proteus spp. bacilli belong to opportunistic human pathogens, which are primarily responsible for urinary tract and wound infections. An important virulence factor is their ability to form biofilms that greatly reduce the effectiveness of antibiotics in the site of infection. Objectives The aim of this study was to determine the value of the minimum concentration of ciprofloxacin that eradicates a biofilm of Proteus spp. strains. Materials and Methods A biofilm formation of 20 strains of P. mirabilis and 20 strains of P. vulgaris were evaluated by a spectrophotometric method using 0.1% 2, 3, 5-Triphenyl-tetrazolium chloride solution (TTC, AVANTORTM). On the basis of the results of the absorbance of the formazan, a degree of reduction of biofilm and minimum biofilm eradication (MBE) values of MBE50 and MBE90 were determined. Results All tested strains formed a biofilm. A value of 1.0 μg/mL ciprofloxacin is MBE50 for the strains of both tested species. An MBE90 value of ciprofloxacin for isolates of P. vulgaris was 2 μg/mL and for P. mirabilis was 512 μg/mL. Conclusions Minimum biofilm eradication values of ciprofloxacin obtained in the study are close to the values of the minimal inhibition concentration (MIC). PMID:27303616

  9. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  10. Investigation of Quantum Effects in Heterostructures.

    DTIC Science & Technology

    2014-09-26

    identlty by block number) .j --) InAs/GaSb and GaSb/AlSb superlattices, GaSb/InAs/GaSb quantum wells and GaAs / GaA #As heterojunctions were prepared by MBE...MBE technique. Two MBE systems were available: Riber 1000 for InAs/GaSb/ASb; and Varian GEN-I for GaAs /GaAlAs. The figure shown below (taken frurn VG...studies are GaAs , GaAIAs, InAs, GaSb, AISb, Si and Ge. 3.0- Uase AlP CS0.5 2.0 ,. •b Eg CdTe (ZLm) -Si 1 -Oi 1.00 In~s kSb S 0F I I I I I I I I I I I T e

  11. Universality and dependence on initial conditions in the class of the nonlinear molecular beam epitaxy equation.

    PubMed

    Carrasco, I S S; Oliveira, T J

    2016-11-01

    We report extensive numerical simulations of growth models belonging to the nonlinear molecular beam epitaxy (nMBE) class, on flat (fixed-size) and expanding substrates (ES). In both d=1+1 and 2+1, we find that growth regime height distributions (HDs), and spatial and temporal covariances are universal, but are dependent on the initial conditions, while the critical exponents are the same for flat and ES systems. Thus, the nMBE class does split into subclasses, as does the Kardar-Parisi-Zhang (KPZ) class. Applying the "KPZ ansatz" to nMBE models, we estimate the cumulants of the 1+1 HDs. Spatial covariance for the flat subclass is hallmarked by a minimum, which is not present in the ES one. Temporal correlations are shown to decay following well-known conjectures.

  12. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  13. The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Schumann, T.; Lopes, J. M. J.; Wofford, J. M.; Oliveira, M. H.; Dubslaff, M.; Hanke, M.; Jahn, U.; Geelhaar, L.; Riechert, H.

    2015-09-01

    We examine how substrate selection impacts the resulting film properties in graphene growth by molecular beam epitaxy (MBE). Graphene growth on metallic as well as dielectric templates was investigated. We find that MBE offers control over the number of atomic graphene layers regardless of the substrate used. High structural quality could be achieved for graphene prepared on Ni (111) films which were epitaxially grown on MgO (111). For growth either on Al2O3 (0001) or on (6√3×6√3)R30°-reconstructed SiC (0001) surfaces, graphene with a higher density of defects is obtained. Interestingly, despite their defective nature, the layers possess a well defined epitaxial relation to the underlying substrate. These results demonstrate the feasibility of MBE as a technique for realizing the scalable synthesis of this two-dimensional crystal on a variety of substrates.

  14. Development of molecular beam epitaxy technology for III–V compound semiconductor heterostructure devices

    SciTech Connect

    Cheng, K. Y.

    2013-09-15

    Molecular beam epitaxy (MBE) is a versatile ultrahigh vacuum technique for growing multiple epitaxial layers of semiconductor crystals with high precision. The extreme control of the MBE technique over composition variation, interface sharpness, impurity doping profiles, and epitaxial layer thickness to the atomic level makes it possible to demonstrate a wide variety of novel semiconductor structures. Since its invention nearly 40 years ago, the MBE technique has evolved from a laboratory apparatus for exploring new materials and novel devices to a favored tool for the mass production of III–V high-speed devices. This paper will review some of the past developments in this technology and propose an outlook of future developments.

  15. Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

  16. Molecular beam epitaxy of SrTiO3 with a growth window

    NASA Astrophysics Data System (ADS)

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-01

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  17. Molecular beam epitaxy of SrTiO{sub 3} with a growth window

    SciTech Connect

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-20

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO{sub 3} films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO{sub 3} films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  18. The controlled growth of perovskite thin films: Opportunities, challenges, and synthesis

    SciTech Connect

    Schlom, D.G.; Theis, C.D.; Hawley, M.E.

    1997-10-01

    The broad spectrum of electronic and optical properties exhibited by perovskites offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the monolayer-level; its use for the integration of perovskites with similar nanoscale customization appears promising. Composition control and oxidation are often significant challenges to the growth of perovskites by MBE, but we show that these can be met through the use of purified ozone as an oxidant and real-time atomic absorption composition control. The opportunities, challenges, and synthesis of oxide heterostructures by reactive MBE are described, with examples taken from the growth of oxide superconductors and oxide ferroelectrics.

  19. Growth and photoluminescence characteristics of AlGaAs nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Z. H.; Sun, M.; Mei, X. Y.; Ruda, H. E.

    2004-07-01

    Growth of high-quality single-crystal AlGaAs nanowires was demonstrated using the vapor-liquid-solid (VLS) mechanism with molecular-beam epitaxy (MBE). Highly ordered AlGaAs nanowire arrays and GaAs /AlGaAs multilayer nanowires were also prepared. Photoluminescence (PL) from homogeneous AlGaAs and GaAs /AlGaAs multilayer nanowires was measured. The Al composition of the AlGaAs nanowires was found to be significantly lower than that for planar MBE films grown under the same conditions, as determined from PL and energy-dispersive x-ray spectroscopy measurements. This is explained in terms of the different growth mechanisms for VLS and normal MBE. Such AlGaAs nanowires are expected to have a wide range of applications in electronic and photonic devices.

  20. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey. J.; Wang, George T.

    2015-10-01

    Ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (1 1 bar 02) r-plane sapphire substrates. Dislocation free [ 11 2 bar 0 ] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar { 10 1 bar 0 } side facets, which appear due to a decrease in relative growth rate of the { 10 1 bar 0 } facets to the { 10 1 bar 1 } and { 10 1 bar 1 } facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  1. Use of polyacrylamide gel moving boundary electrophoresis to enable low-power protein analysis in a compact microdevice.

    PubMed

    Duncombe, Todd A; Herr, Amy E

    2012-10-16

    In designing a protein electrophoresis platform composed of a single-inlet, single-outlet microchannel powered solely by voltage control (no pumps, values, injectors), we adapted the original protein electrophoresis format-moving boundary electrophoresis (MBE)-to a high-performance, compact microfluidic format. Key to the microfluidic adaptation is minimization of injection dispersion during sample injection. To reduce injection dispersion, we utilize a photopatterned free-solution-polyacrylamide gel (PAG) stacking interface at the head of the MBE microchannel. The nanoporous PAG molecular sieve physically induces a mobility shift that acts to enrich and sharpen protein fronts as proteins enter the microchannel. Various PAG configurations are characterized, with injection dispersion reduced by up to 85%. When employed for analysis of a model protein sample, microfluidic PAG MBE baseline-resolved species in 5 s and in a separation distance of less than 1 mm. PAG MBE thus demonstrates electrophoretic assays with minimal interfacing and sample handling, while maintaining separation performance. Owing to the short separation lengths needed in PAG MBE, we reduced the separation channel length to demonstrate an electrophoretic immunoassay powered with an off-the-shelf 9 V battery. The electrophoretic immunoassay consumed less than 3 μW of power and was completed in 30 s. To our knowledge, this is the lowest voltage and lowest power electrophoretic protein separation reported. Looking forward, we see the low-power PAG MBE as a basis for highly multiplexed protein separations (mobility shift screening assays) as well as for portable low-power diagnostic assays.

  2. Magnetic Resonance of Defects in Heteroepitaxial Semiconductor Structures

    DTIC Science & Technology

    1992-05-11

    Resistivity of Low-Temperature MBE GaAs," in: Semi-Insulating II/V Materials 1990, Eds. A.G. Milnes and C.J. Miner ( Adam Hilger, Bristol 1990), p. 111. 6...Resistivity of Low-Temperature MBE GaAs," in: Semi-Insulating III/V Materials 1990, Eds. A.G. Milnes and C.J. Miner ( Adam Hilger, Bristol 1990), p...and Temperature on the Structure of Low-Temperature GaAs, Z Liliental- Weber, A. Claverie, P. Werner, W. Schaff , and E. R. Weber, in: Defects in

  3. Passivation of InAs and GaSb with Novel High kappa Dielectrics

    DTIC Science & Technology

    2011-01-05

    Ga2O3 ( Gd2O3 ) (amorphous) and Gd2O3 (single crystals), and ALD-Al2O3 and HfO2 II、 growth of InAs and GaSb epi-layers using molecular beam epitaxy (MBE...spectroscopy ( XPS ), and high-resolution XPS using synchrotron radiation i. to probe the chemistry (interfacial atomic bonding) in the hetero...epitaxy (MBE), followed by the in-situ growth of Gd2O3 3 ML thick in ultra high vacuum (UHV) with electron beam evaporation and then by atomic layer

  4. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  5. A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines

    SciTech Connect

    Slobodskyy, T.; Schroth, P.; Grigoriev, D.; Minkevich, A. A.; Baumbach, T.; Hu, D. Z.; Schaadt, D. M.

    2012-10-15

    A portable synchrotron molecular beam epitaxy (MBE) system is designed and applied for in situ investigations. The growth chamber is equipped with all the standard MBE components such as effusion cells with shutters, main shutter, cooling shroud, manipulator, reflection high energy electron diffraction setup, and pressure gauges. The characteristic feature of the system is the beryllium windows which are used for in situ x-ray measurements. An UHV sample transfer case allows in vacuo transfer of samples prepared elsewhere. We describe the system design and demonstrate its performance by investigating the annealing process of buried InGaAs self-organized quantum dots.

  6. A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines.

    PubMed

    Slobodskyy, T; Schroth, P; Grigoriev, D; Minkevich, A A; Hu, D Z; Schaadt, D M; Baumbach, T

    2012-10-01

    A portable synchrotron molecular beam epitaxy (MBE) system is designed and applied for in situ investigations. The growth chamber is equipped with all the standard MBE components such as effusion cells with shutters, main shutter, cooling shroud, manipulator, reflection high energy electron diffraction setup, and pressure gauges. The characteristic feature of the system is the beryllium windows which are used for in situ x-ray measurements. An UHV sample transfer case allows in vacuo transfer of samples prepared elsewhere. We describe the system design and demonstrate its performance by investigating the annealing process of buried InGaAs self-organized quantum dots.

  7. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  8. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  9. Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

    SciTech Connect

    Aho, A.; Korpijärvi, V.-M.; Tukiainen, A.; Puustinen, J.; Guina, M.

    2014-12-07

    We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N flow, and RF power, and group III growth rate. The semi-empirical model is shown to be repeatable with a maximum error of 6%. The model was validated for two different MBE systems by growing GaInNAs on GaAs(100) with variable nitrogen composition of 0%–6%.

  10. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  11. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  12. Graphene growth by molecular beam epitaxy on the carbon-face of SiC

    SciTech Connect

    Moreau, E.; Godey, S.; Ferrer, F. J.; Vignaud, D.; Wallart, X.; Avila, J.; Asensio, M. C.; Bournel, F.; Gallet, J.-J.

    2010-12-13

    Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (0001), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.

  13. Two Different Methods for Numerical Solution of the Modified Burgers' Equation

    PubMed Central

    Karakoç, Seydi Battal Gazi; Başhan, Ali; Geyikli, Turabi

    2014-01-01

    A numerical solution of the modified Burgers' equation (MBE) is obtained by using quartic B-spline subdomain finite element method (SFEM) over which the nonlinear term is locally linearized and using quartic B-spline differential quadrature (QBDQM) method. The accuracy and efficiency of the methods are discussed by computing L 2 and L ∞ error norms. Comparisons are made with those of some earlier papers. The obtained numerical results show that the methods are effective numerical schemes to solve the MBE. A linear stability analysis, based on the von Neumann scheme, shows the SFEM is unconditionally stable. A rate of convergence analysis is also given for the DQM. PMID:25162064

  14. Morning breathing exercises prolong lifespan by improving hyperventilation in people living with respiratory cancer

    PubMed Central

    Wu, Wei-Jie; Wang, Shan-Huan; Ling, Wei; Geng, Li-Jun; Zhang, Xiao-Xi; Yu, Lan; Chen, Jun; Luo, Jiang-Xi; Zhao, Hai-Lu

    2017-01-01

    Abstract Disturbance of oxygen–carbon dioxide homeostasis has an impact on cancer. Little is known about the effect of breath training on cancer patients. Here we report our 10-year experience with morning breathing exercises (MBE) in peer-support programs for cancer survivors. We performed a cohort study to investigate long-term surviving patients with lung cancer (LC) and nasopharyngeal cancer (NPC) who practiced MBE on a daily basis. End-tidal breath holding time (ETBHT) after MBE was measured to reflect improvement in alveolar O2 pressure and alveolar CO2 pressure capacity. Patients (female, 57) with a diagnosis of LC (90 patients) and NPC (32 patients) were included. Seventy-six of them were MBE trainees. Average survival years were higher in MBE trainees (9.8 ± 9.5) than nontrainees (3.3 ± 2.8). The 5-year survival rate was 56.6% for MBE trainees and 19.6% for nontrainees (RR = 5.371, 95% CI = 2.271–12.636, P < 0.001). Survival probability of the trainees further increased 17.9-fold for the 10-year survival rate. Compared with the nontrainees, the MBE trainees shows no significant differences in ETBHT (baseline, P = 0.795; 1–2 years, P = 0.301; 3–4 years, P = 0.059) at baseline and within the first 4 years. From the 5th year onwards, significant improvements were observed in ETBHT, aCO2%, PaCO2, and PaO2 (P = 0.028). In total, 18 trainees (40.9%) and 20 nontrainees (74.1%) developed new metastasis (RR = 0.315, 95% CI = 0.108–0.919, P = 0.031). MBE might benefit for the long-term survival in patients with LC and NPC due to improvement in hyperventilation. PMID:28079815

  15. Optical properties of self assembled GaN polarity inversion domain boundary

    SciTech Connect

    Liu, M.-C.; Cheng, Y.-J.; Chang, J.-R.; Chang, C.-Y.; Hsu, S.-C.

    2011-07-11

    We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

  16. Two different methods for numerical solution of the modified Burgers' equation.

    PubMed

    Karakoç, Seydi Battal Gazi; Başhan, Ali; Geyikli, Turabi

    2014-01-01

    A numerical solution of the modified Burgers' equation (MBE) is obtained by using quartic B-spline subdomain finite element method (SFEM) over which the nonlinear term is locally linearized and using quartic B-spline differential quadrature (QBDQM) method. The accuracy and efficiency of the methods are discussed by computing L 2 and L ∞ error norms. Comparisons are made with those of some earlier papers. The obtained numerical results show that the methods are effective numerical schemes to solve the MBE. A linear stability analysis, based on the von Neumann scheme, shows the SFEM is unconditionally stable. A rate of convergence analysis is also given for the DQM.

  17. The Use of In Situ X-ray Imaging Methods in the Research and Development of Magnesium-Based Grain-Refined and Nanocomposite Materials

    NASA Astrophysics Data System (ADS)

    Sillekens, W. H.; Casari, D.; Mirihanage, W. U.; Terzi, S.; Mathiesen, R. H.; Salvo, L.; Daudin, R.; Lhuissier, P.; Guo, E.; Lee, P. D.

    2016-12-01

    Metallurgists have an ever-increasing suite of analytical techniques at their disposition. Among these techniques are the in situ methods, being those approaches that are designed to actually study events that occur in the material during for instance solidification, (thermo)-mechanical working or heat treatment. As such they are a powerful tool in unraveling the mechanisms behind these processes, supplementary to ex situ methods that instead analyze the materials before and after their processing. In this paper, case studies are presented of how in situ imaging methods—and more specifically micro-focus x-ray radiography and synchrotron x-ray tomography—are used in the research and development of magnesium-based grain-refined and nanocomposite materials. These results are drawn from the EC collaborative research project ExoMet (www.exomet-project.eu). The first example concerns the solidification of a Mg-Nd-Gd alloy with Zr addition to assess the role of zirconium content and cooling rate in crystal nucleation and growth. The second example concerns the solidification of a Mg-Zn-Al alloy and its SiC-containing nanocomposite material to reveal the influence of particle addition on microstructural development. The third example concerns the (partial) melting-solidification of Elektron21/AlN and Elektron21/Y2O3 nanocomposite materials to study such effects as particle pushing/engulfment and agglomeration during repeated processing. Such studies firstly visualize and by that confirm what is known or assumed. Secondly, they advance science by monitoring and quantifying phenomena as they evolve during processing and by that contribute toward a better understanding of the physics at play.

  18. Center for High-Frequency Microelectronics

    DTIC Science & Technology

    1992-08-31

    ducibility of Si-doped p-type (311)A GaAs layers for application to Ineterojunction bipolar transistors (HBT’s) grown by molecu- lar beam epitaxy (MBE). We...Coulomb effects modify the ordinary Onsager pi" ture and the relation I" = TS. The coefficients S and II are found to be ve-" _- :five to the coupling of

  19. Long-Wavelength Stacked Si(sub 1-x)/Si Heterojunction Internal Photoemission Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; George, T.; Gunapala, S. D.

    1993-01-01

    Utilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Se layers have been fabricated and demonstrated.

  20. Undoped Buffer Layer Development.

    DTIC Science & Technology

    1984-01-01

    boiled for several hours in aqua regia , followed by boiling for several more hours in deionized water before being dried in air and loaded into the...different from Report) 1S. SUPPLEMENTARY NOTES it. IKy WORDS (Canal... an reverse 4aaIo It eesarav d Ientify by block nuinbr) Epitaxial layer MBE

  1. An Education Grounded in Biology: Interdisciplinary and Ethical Considerations

    ERIC Educational Resources Information Center

    Gardner, Howard

    2009-01-01

    Work in the new area of Mind, Brain, and Education (MBE) raises epistemological and ethical issues. With respect to epistemology, the norms of the component disciplines must be honored and the resulting amalgam must be more than a mere sum of the parts. With respect to ethics, the roles of scientist, educator, and practitioner each raise ethical…

  2. Partitioning: splitting fact from fiction.

    PubMed

    Pike, Brian

    2012-05-01

    Many larger hospitals are sprawling complexes with endless corridors and rooms of varying purpose. While cleanliness and infection control are, understandably, leading considerations in any hospital building, fire safety also plays a crucial role. Here Brian Pike MBE, technical consultant at partitioning system designer and manufacturer, Komfort Workspace, looks at how current fire guidelines impact on the use of partitioning systems in hospital premises.

  3. Linking Mind, Brain, and Education to Clinical Practice: A Proposal for Transdisciplinary Collaboration

    ERIC Educational Resources Information Center

    Ronstadt, Katie; Yellin, Paul B.

    2010-01-01

    It has been suggested that the field of Mind, Brain, and Education (MBE) requires a stable infrastructure for translating research into practice. Hinton and Fischer (2008) point to the academic medical center as a model for similar translational work and suggest a similar approach for linking scientists to research schools. We propose expanding…

  4. Mind, Brain and Education: A Decade of Evolution

    ERIC Educational Resources Information Center

    Schwartz, Marc

    2015-01-01

    This article examines the evolution of Mind, Brain, and Education (MBE), the field, alongside that of the International Mind, Brain and Education Society (IMBES). The reflections stem mostly from my observations while serving as vice president, president-elect, and president of IMBES during the past 10 years. The article highlights the evolution…

  5. Material Technology for Vortex Electronics

    NASA Astrophysics Data System (ADS)

    Kobayashi, T.; Oda, S.; Michikami, O.; Terashima, T.

    High-T_c superconductor (HTSC) thin films are typically grown by mean of pulsed laser deposition (PLD), metalorganic chemical vapor deposition (MOCVD), sputtering or molecular beam epitaxy (MBE). This chapter reviews recent progress in the thin film growth technologies of HTSCs.

  6. Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications

    NASA Astrophysics Data System (ADS)

    Masuda, T.; Faucher, J.; Lee, M. L.

    2016-11-01

    We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple junction stack grown by MBE could enable ultra-high efficiencies without metamorphic growth or wafer bonding. However, a diffused junction cannot be readily formed in Ge by MBE due to the low sticking coefficient of group-V molecules on Ge surfaces. We therefore realized Ge junctions by growth of homo-epitaxial n-Ge on p-Ge wafers within a standard III-V MBE system. We then fabricated Ge solar cells, finding growth temperature and post-growth annealing to be key factors for achieving high efficiency. Open-circuit voltage and fill factor values of ~0.175 V and ~0.59 without a window layer were obtained, both of which are comparable to diffused Ge junctions formed by metal-organic vapor phase epitaxy. We also demonstrate growth of high-quality, single-domain GaAs on the Ge junction, as needed for subsequent growth of III-V subcells, and that the surface passivation afforded by the GaAs layer slightly improves the Ge cell performance.

  7. 640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

    NASA Technical Reports Server (NTRS)

    Gunapala, S.; Bandara, S.; Liu, J.; Rafol, S.; Luong, E.; Mumolo, J.; Tran, N.

    1999-01-01

    An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).

  8. Wurtzite Al xGa 1- xN bulk crystals grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Staddon, C. R.; Powell, R. E. L.; Akimov, A. V.; Luckert, F.; Edwards, P. R.; Martin, R. W.; Kent, A. J.; Foxon, C. T.

    2011-05-01

    We have studied the growth of wurtzite GaN and Al xGa 1- xN layers and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced 2 in diameter wurtzite Al xGa 1- xN layers up to 10 μm in thickness. Undoped wurtzite Al xGa 1- xN films were grown on GaAs (1 1 1)B substrates by a plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The fact that free-standing ternary Al xGa 1- xN wafers can be grown is very significant for the potential future production of wurtzite Al xGa 1- xN substrates optimized for AlGaN-based device structures.

  9. Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

    SciTech Connect

    Tivakornsasithorn, K.; Liu, X.; Li, X.; Dobrowolska, M.; Furdyna, J. K.

    2014-07-28

    We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

  10. Can the Differences between Education and Neuroscience Be Overcome by Mind, Brain, and Education?

    ERIC Educational Resources Information Center

    Samuels, Boba M.

    2009-01-01

    The new field of Mind, Brain, and Education (MBE)--sometimes called educational neuroscience--is posited as a mediator between neuroscience and education. Several foundational concerns, however, can be raised about this emerging field. The differences between neuroscience and education are many, including differences in their histories,…

  11. 32. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    32. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM THIRD FLOOR OF MBE BUILDING SHOWING ROOF OF REA LOADING DOCK (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  12. 30. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    30. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM ATOP PARKING STRUCTURE (MBE BUILDING AT LEFT REAR) (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  13. 23. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM ALAMEDA STREET; THE REA LOADING DOCK AND MBE BUILDING ARE VISIBLE ON THE FAR SIDE OF THE PARKING LOT (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  14. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Minority Business Enterprises 2426.7001 Policy. It is the policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its procurement program, to the extent permitted by law and consistent with its primary mission. A...

  15. Research on Self-Assembling Quantum Dots.

    DTIC Science & Technology

    1995-10-30

    0K. in a second phase of this contract we turned our efforts to the fabrication and studies of self assembled quantum dots . We first demonstrated a...method for producing InAs-GasAs self assembled quantum dots (SAD) using MBE. (AN)

  16. Detecting changes in ultrasound backscattered statistics by using Nakagami parameters: Comparisons of moment-based and maximum likelihood estimators.

    PubMed

    Lin, Jen-Jen; Cheng, Jung-Yu; Huang, Li-Fei; Lin, Ying-Hsiu; Wan, Yung-Liang; Tsui, Po-Hsiang

    2017-05-01

    The Nakagami distribution is an approximation useful to the statistics of ultrasound backscattered signals for tissue characterization. Various estimators may affect the Nakagami parameter in the detection of changes in backscattered statistics. In particular, the moment-based estimator (MBE) and maximum likelihood estimator (MLE) are two primary methods used to estimate the Nakagami parameters of ultrasound signals. This study explored the effects of the MBE and different MLE approximations on Nakagami parameter estimations. Ultrasound backscattered signals of different scatterer number densities were generated using a simulation model, and phantom experiments and measurements of human liver tissues were also conducted to acquire real backscattered echoes. Envelope signals were employed to estimate the Nakagami parameters by using the MBE, first- and second-order approximations of MLE (MLE1 and MLE2, respectively), and Greenwood approximation (MLEgw) for comparisons. The simulation results demonstrated that, compared with the MBE and MLE1, the MLE2 and MLEgw enabled more stable parameter estimations with small sample sizes. Notably, the required data length of the envelope signal was 3.6 times the pulse length. The phantom and tissue measurement results also showed that the Nakagami parameters estimated using the MLE2 and MLEgw could simultaneously differentiate various scatterer concentrations with lower standard deviations and reliably reflect physical meanings associated with the backscattered statistics. Therefore, the MLE2 and MLEgw are suggested as estimators for the development of Nakagami-based methodologies for ultrasound tissue characterization.

  17. In Situ Grown Quantum-Wire Lasers

    DTIC Science & Technology

    1994-04-07

    laser development . This latter effort also required substantial improvements in the MBE growth technology. Much of this technology is now ready for transfer to industry. In fact, a number of joint projects with industry are underway, as a result of this

  18. A First Course in Mind, Brain, and Education

    ERIC Educational Resources Information Center

    Blake, Peter R.; Gardner, Howard

    2007-01-01

    We describe what may well be the first course devoted explicitly to the topic of Mind, Brain, and Education (MBE). In the course, students examine four central topics (literacy, numeracy, emotion/motivation, and conceptual change) through the perspectives of psychology, neuroscience, genetics, and education. We describe the pedagogical tools we…

  19. The Birth of a Field and the Rebirth of the Laboratory School

    ERIC Educational Resources Information Center

    Schwartz, Marc; Gerlach, Jeanne

    2011-01-01

    We describe the emergence of a new field, "Mind Brain and Education", dedicated to the science of learning, as well as the roles researchers, policy makers, and educators need to play in developing this collaborative effort. The article highlights the challenges that MBE faces and the strategy researchers and educators in Texas are…

  20. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  1. On local pairs vs. BCS: Quo vadis high-Tc superconductivity

    DOE PAGES

    Pavuna, D.; Dubuis, G.; Bollinger, A. T.; ...

    2016-07-28

    Since the discovery of high-temperature superconductivity in cuprates, proposals have been made that pairing may be local, in particular in underdoped samples. Furthermore, we briefly review evidence for local pairs from our experiments on thin films of La 2–xSrxCuO4, synthesized by atomic layer-by-layer molecular beam epitaxy (ALL-MBE).

  2. The Influence of Growth Temperature on Sb Incorporation in InAsSb, and the Temperature-dependent Impact of Bi Surfactants

    DTIC Science & Technology

    2014-01-01

    NUMBER OF PAGES 19a. NAME OF RESPONSIBLE PERSON Joanna Millunchick 19b. TELEPHONE NUMBER 734-64 7-8980 Standard F01m 298 (Rev 8/98) Prescribed by...Pearson; Joanna M Millunchick Abstract: A series of two-layer InAsSb films were grown with molecular beam epitaxy (MBE). We report the effect of

  3. Engineering Photonic Devices and Materials Through Quantum Confinement and Electromagnetic Design

    DTIC Science & Technology

    2010-12-20

    selectivity based on the Al concentration in AlGaAs films [27]. Preliminary calibration has demonstrated that a 4:1 ratio of citric acid to hydrogen ... peroxide etches GaAs at a rate approximately 100 times faster than Al0.3Ga0.7As. To take advantage of this effect, we propose a material based on an MBE

  4. Molecular beam source for high vapor pressure materials

    SciTech Connect

    Myers, T.H.; Schetzina, J.F.

    1982-02-01

    A molecular beam source for deposition of high vapor pressure materials in MBE systems is described. The source consists of a collimating effusion cell of original design which is heated by a temperature-controlled Radak II oven (Luxel Corporation). Construction details of the source are given along with calibration and performance data.

  5. 40 CFR 33.205 - How does an entity become certified by EPA?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false How does an entity become certified by EPA? 33.205 Section 33.205 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER... further information and required application forms to any entity interested in MBE or WBE...

  6. The study of multilayers Fe/Hf and Ni/Hf by slow positron beam technique

    NASA Astrophysics Data System (ADS)

    Tashiro, Mutsumi; Nakajyo, Terunobu; Murashige, Yusuke; Koizumi, Tomoya; Kanazawa, Ikuzo; Komori, Fumio; Soe, We-Hyo; Yamamoto, Ryoichi; Ito, Yasuo

    1997-05-01

    The S-parameters versus the incident positron energy are measured in the Ni/Hf multilayer, thin Hf film, thin Fe film and the bilayer Fe/Hf. We have analyzed the change in vacancy-type defects in these multilayers and thin films with the deposition temperature in the MBE system.

  7. IR Detectors Technology

    DTIC Science & Technology

    2000-07-01

    report results from a contract tasking Charles University as follows: The contractor will prepare Near perfect ( CdZn )Te crystals of diameter up to...crystals. The objective is to produce near-perfect ( CdZn )Te substrates in orientations (111) and (211) for LPE/MBE epitaxial growth applications. Point

  8. A Substantive Process Analysis of Responses to Items from the Multistate Bar Examination

    ERIC Educational Resources Information Center

    Bonner, Sarah M.; D'Agostino, Jerome V.

    2012-01-01

    We investigated examinees' cognitive processes while they solved selected items from the Multistate Bar Exam (MBE), a high-stakes professional certification examination. We focused on ascertaining those mental processes most frequently used by examinees, and the most common types of errors in their thinking. We compared the relationships between…

  9. Heavy ion fusion end of the year report, April 1, 1984-September 30, 1984

    SciTech Connect

    Not Available

    1984-12-01

    Research progress is reported for each of the following areas: (1) multiple-beam experiment, (2) current amplification in MBE-4, (3) single-beam transport experiment, (4) neutral beam focusing experiment, (5) range energy measurements, (6) source development work, and (7) induction linac component development. (MOW)

  10. Spectroscopic Studies with Multiple Quantum Well Materials with Applications to Optical Signal Processing at Room Temperature.

    DTIC Science & Technology

    1987-11-17

    means of a quarter-wave plate or Soleil - Babinet compensator. However, at high peak powers, the polarization becomes intensity dependent and is not the...beam epitaxy (MBE) on Si- The sapphire mirror with the MQW sample was at- doped (100) GaAs substrates. The substrate preparation tached to a copper

  11. Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

    SciTech Connect

    Shin, Byungha; Aziz, Michael J.

    2007-08-15

    We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown.

  12. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Minority Business Enterprises 2426.7001 Policy. It is the policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its procurement program, to the extent permitted by law and consistent with its primary mission. A...

  13. The TARDEC Advanced Systems Engineering Capability (ASEC)

    DTIC Science & Technology

    2012-08-01

    Systems Engineering ( MBSE ) information. The ASEC enables decision makers to make informed decisions with confidence based on a mix of qualitative and...to support Model Based Engineering (MBE) and Model Based Systems Engineering ( MBSE ) information. The ASEC enables decision makers to make informed

  14. Testing the Digital Thread in Support of Model-Based Manufacturing and Inspection.

    PubMed

    Hedberg, Thomas; Lubell, Joshua; Fischer, Lyle; Maggiano, Larry; Feeney, Allison Barnard

    2016-06-01

    A number of manufacturing companies have reported anecdotal evidence describing the benefits of Model-Based Enterprise (MBE). Based on this evidence, major players in industry have embraced a vision to deploy MBE. In our view, the best chance of realizing this vision is the creation of a single "digital thread." Under MBE, there exists a Model-Based Definition (MBD), created by the Engineering function, that downstream functions reuse to complete Model-Based Manufacturing and Model-Based Inspection activities. The ensemble of data that enables the combination of model-based definition, manufacturing, and inspection defines this digital thread. Such a digital thread would enable real-time design and analysis, collaborative process-flow development, automated artifact creation, and full-process traceability in a seamless real-time collaborative development among project participants. This paper documents the strengths and weaknesses in the current, industry strategies for implementing MBE. It also identifies gaps in the transition and/or exchange of data between various manufacturing processes. Lastly, this paper presents measured results from a study of model-based processes compared to drawing-based processes and provides evidence to support the anecdotal evidence and vision made by industry.

  15. Group Blogs as Toolkits to Support Learning Environments in Statistics Subject: A Qualitative Case Study

    ERIC Educational Resources Information Center

    Hashim, Mohamad Hisyam Mohd

    2012-01-01

    In this paper, we describe the introduction of blogs to a class of Masters in Technical and Vocational Education students taking the MBE 1223 Statistics in Education module in Universiti Tun Hussein Onn Malaysia (UTHM). The purpose of the analysis is to elaborate on the perception of the participants towards blogs before, during and after training…

  16. Center for Thin Film Studies

    DTIC Science & Technology

    1988-10-31

    initial layers of ZnS by molecular beam epitaxy (MBE) and atomic layer evaporation (ALE) on substrates prepared using different protocols . Work...I TASK 1. Nucleation and Growth Studies By Conventional and Atomic Layer Evaporation... LAYER EVAPORATION Principal Investigator: U. J. Gibson Project Goal The goal of the project is to study the details of nucleation and film growth

  17. Heavy-ion fusion accelerator research, 1989

    SciTech Connect

    Not Available

    1990-06-01

    This report discusses the following topics on heavy-ion fusion accelerator research: MBE-4: the induction-linac approach; transverse beam dynamics and current amplification; scaling up the results; through ILSE to a driver; ion-source and injector development; and accelerator component research and development.

  18. Insolation-induced mid-Brunhes transition in Southern Ocean ventilation and deep-ocean temperature.

    PubMed

    Yin, Qiuzhen

    2013-02-14

    Glacial-interglacial cycles characterized by long cold periods interrupted by short periods of warmth are the dominant feature of Pleistocene climate, with the relative intensity and duration of past and future interglacials being of particular interest for civilization. The interglacials after 430,000 years ago were characterized by warmer climates and higher atmospheric concentrations of carbon dioxide than the interglacials before, but the cause of this climatic transition (the so-called mid-Brunhes event (MBE)) is unknown. Here I show, on the basis of model simulations, that in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic bottom water formation and Southern Ocean ventilation. My results also show that strong westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and by changes in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward systematic difference in the astronomical parameters between the interglacials before and after 430,000 years ago. Rather than being a real 'event', the apparent MBE seems to have resulted from a series of individual interglacial responses--including notable exceptions to the general pattern--to various combinations of insolation conditions. Consequently, assuming no anthropogenic interference, future interglacials may have pre- or post-MBE characteristics without there being a systematic change in forcings. These findings are a first step towards understanding the magnitude change of the interglacial carbon dioxide concentration around 430

  19. Magnolia officinalis L. Fortified Gum Improves Resistance of Oral Epithelial Cells Against Inflammation.

    PubMed

    Walker, Jessica; Imboeck, Julia Maria; Walker, Joel Michael; Maitra, Amarnath; Haririan, Hady; Rausch-Fan, Xiaohui; Dodds, Michael; Inui, Taichi; Somoza, Veronika

    2016-01-01

    Inflammatory diseases of the periodontal tissues are known health problems worldwide. Therefore, anti-inflammatory active compounds are used in oral care products to reduce long-term inflammation. In addition to inducing inflammation, pathogen attack leads to an increased production of reactive oxygen species (ROS), which may lead to oxidative damage of macromolecules. Magnolia officinalis L. bark extract (MBE) has been shown to possess antioxidant and anti-inflammatory potential in vitro. In the present study, the influence of MBE-fortified chewing gum on the resistance against lipopolysaccharide (LPS)-induced inflammation and oxidative stress of oral epithelial cells was investigated in a four-armed parallel designed human intervention trial with 40 healthy volunteers. Ex vivo stimulation of oral epithelial cells with LPS from Porphyromonas gingivalis for 6[Formula: see text]h increased the mRNA expression and release of the pro-inflammatory cytokines IL-1[Formula: see text], IL-[Formula: see text], IL-8, MIP-1[Formula: see text], and TNF[Formula: see text]. Chewing MBE-fortified gum for 10[Formula: see text]min reduced the ex vivo LPS-induced increase of IL-8 release by 43.8 [Formula: see text] 17.1% at the beginning of the intervention. In addition, after the two-week intervention with MBE-fortified chewing gum, LPS-stimulated TNF[Formula: see text] release was attenuated by 73.4 [Formula: see text] 12.0% compared to chewing regular control gum. This increased resistance against LPS-induced inflammation suggests that MBE possesses anti-inflammatory activity in vivo when added to chewing gum. In contrast, the conditions used to stimulate an immune response of oral epithelial cells failed to induce oxidative stress, measured by catalase activity, or oxidative DNA damage.

  20. Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in Cd x Hg1- x Te Heteroepitaxial Layers

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Talipov, N. Kh.

    2013-12-01

    Processes of electrical activation of ion-implanted boron and nitrogen atoms in Cd x Hg1- x Te (CMT) heteroepitaxial layers grown by methods of molecular-beam epitaxy (HEL CMT MBE) and liquid-phase epitaxy (LPE CMT) have been investigated; likewise in bulk crystals of CMT with low-temperature annealings under anodic oxide. The possibility has been demonstrated of using anodic oxide as an efficient mask for postimplantation annealings of p-type HEL CMT MBE in the temperature interval Т = 200-250°C without disruption of the composition of the variband layer or alteration of the electrophysical properties of the structure. It has been established that in HEL CMT MBE the efficiency of activation of boron as a slowly diffusing donor impurity is lowered with growth of the dose of the B+ ions and is increased by thermal cycling from Т = 77 K to room temperature. Implanted nitrogen, in contrast to boron, is a rapidly diffusing acceptor impurity in CMT, efficiently compensating both radiation donor centers and activated boron. The degree of electrical activation of nitrogen grows substantially upon thermal cycling. It has been shown that the mobility spectrum is an efficient method for monitoring the process of electrical activation of boron in p-type HEL CMT MBE. Mesa photodiodes based on activated boron in p-type HEL CMT MBE with long-wavelength photosensitivity boundary λc = 11 μm, prepared here for the first time, had a high maximum value of the product of the differential resistance by the area of the photodiode R d A = (6 - 8)ṡ102 Ωṡcm2, product R 0 A = 5 - 6 Ωṡcm2 (at zero bias), and a diffusion ledge on the inverse branch of the current-voltage ( I- V) characteristic out to a bias voltage of 1.3 V.

  1. Middle to Late Pleistocene vegetation and climate change in subtropical southern East Africa

    NASA Astrophysics Data System (ADS)

    Castañeda, Isla S.; Caley, Thibaut; Dupont, Lydie; Kim, Jung-Hyun; Malaizé, Bruno; Schouten, Stefan

    2016-09-01

    In this study we investigate Pleistocene vegetation and climate change in southern East Africa by examining plant leaf waxes in a marine sediment core that receives terrestrial runoff from the Limpopo River. The plant leaf wax records are compared to a multi-proxy sea surface temperature (SST) record and pollen assemblage data from the same site. We find that Indian Ocean SST variability, driven by high-latitude obliquity, exerted a strong control on the vegetation of southern East Africa during the past 800,000 yr. Interglacial periods were characterized by relatively wetter and warmer conditions, increased contributions of C3 vegetation, and higher SST, whereas glacial periods were marked by cooler and arid conditions, increased contributions of C4 vegetation, and lower SST. We find that Marine Isotope Stages (MIS) 5e, 11c, 15e and 7a-7c are strongly expressed in the plant leaf wax records but MIS 7e is absent while MIS 9 is rather weak. Our plant leaf wax records also record the climate transition associated with the Mid-Brunhes Event (MBE) suggesting that the pre-MBE interval (430-800 ka) was characterized by higher inputs from grasses in comparison to relatively higher inputs from trees in the post-MBE interval (430 to 0 ka). Differences in vegetation and SST of southern East Africa between the pre- and post-MBE intervals appear to be related to shifts in the location of the Subtropical Front. Comparison with vegetation records from tropical East Africa indicates that the vegetation of southern East Africa, while exhibiting glacial-interglacial variability and notable differences between the pre- and post-MBE portions of the record, likely did not experience such dramatic extremes as occurred to the north at Lake Malawi.

  2. Planktic foraminiferal responses to orbital scale oceanographic changes off the western Iberian margin over the last 900 kyr: Results from IODP site U1391

    NASA Astrophysics Data System (ADS)

    Singh, A. D.; Verma, K.; Jaiswal, S.; Alonso-Garcia, M.; Li, B.; Abrantes, F.

    2015-12-01

    This paper presents planktic foraminiferal assemblage records of the last 900 kyr from the SW Iberian margin (IODP Site U1391). The faunal records show the history of surface oceanographic changes on glacial/interglacial scales before and after the Mid-Brunhes Event (MBE), a period when a major shift in the climate pattern was recorded in other regions. Temporal variations in relative abundances of characteristic species/groups are used to infer changes in the latitudinal position of the polar/Arctic water (% Neogloboquadrina pachyderma sinistral and Turborotalita quinqueloba), influence of the transitional subpolar water mass (% N. pachyderma dextral), and subtropical water (% tropical/subtropical species/group). Past changes in the upwelling intensity and productivity pattern associated with seasonal trade wind strength are inferred from the abundance variations of Globigerina bulloides and G. bulloides + Globigerinita glutinata, respectively. Faunal data reveal the influence of cold water masses (polar/subpolar) at the examined site was more pronounced during glacial stages except for marine isotope stage (MIS) 14 and 16. The magnitude of the polar/subpolar water mass invading the study area was at maximum before the MBE during MIS 18, 20 and 22, resulting in a situation like the present day Arctic Front. Interglacial periods prior to the MBE were also relatively colder than those of the post-MBE. Our faunal based inferences are in agreement with the ice-rafted debris (IRD) concentration and N. pachyderma sinistral records of the subpolar North Atlantic sites. Based on faunal proxies, we recorded major and rapid changes in upwelling intensity and related productivity during glacial Terminations. Both the upwelling intensity and productivity significantly increased after the MBE, particularly during the interglacials MIS 7, 9 and 11. Our productivity record parallels the EPICA CH4 record suggesting teleconnections between trade winds induced productivity and the

  3. Estimation of Carbon Dioxide Storage Capacity for Depleted Gas Reservoirs

    NASA Astrophysics Data System (ADS)

    Lai, Yen Ting; Shen, Chien-Hao; Tseng, Chi-Chung; Fan, Chen-Hui; Hsieh, Bieng-Zih

    2015-04-01

    A depleted gas reservoir is one of the best options for CO2 storage for many reasons. First of all, the storage safety or the caprock integrity has been proven because the natural gas was trapped in the formation for a very long period of time. Also the formation properties and fluid flow characteristics for the reservoir have been well studied since the discovery of the gas reservoir. Finally the surface constructions and facilities are very useful and relatively easy to convert for the use of CO2 storage. The purpose of this study was to apply an analytical approach to estimate CO2 storage capacity in a depleted gas reservoir. The analytical method we used is the material balance equation (MBE), which have been widely used in natural gas storage. We proposed a modified MBE for CO2 storage in a depleted gas reservoir by introducing the z-factors of gas, CO2 and the mixture of the two. The MBE can be derived to a linear relationship between the ratio of pressure to gas z-factor (p/z) and the cumulative term (Gp-Ginj, where Gp is the cumulative gas production and Ginj is the cumulative CO2 injection). The CO2 storage capacity can be calculated when constraints of reservoir recovery pressure are adopted. The numerical simulation was also used for the validation of the theoretical estimation of CO2 storage capacity from the MBE. We found that the quantity of CO2 stored is more than that of gas produced when the reservoir pressure is recovered from the abandon pressure to the initial pressure. This result was basically from the fact that the gas- CO2 mixture z-factors are lower than the natural gas z-factors in reservoir conditions. We also established a useful p/z plot to easily observe the pressure behavior of CO2 storage and efficiently calculate the CO2 storage capacity. The application of the MBE we proposed was demonstrated by a case study of a depleted gas reservoir in northwestern Taiwan. The estimated CO2 storage capacities from conducting reservoir simulation

  4. Magnetic properties of gadolinium substituted Bi{sub 2}Te{sub 3} thin films

    SciTech Connect

    Li, S.; Harrison, S. E.; Huo, Y.; Harris, J. S.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Yuan, H. T.; Zhou, B.; Chen, Y.-L.; Hesjedal, T.

    2013-06-17

    Thin film GdBiTe{sub 3} has been proposed as a candidate material in which to observe the quantum anomalous Hall effect. As a thermal non-equilibrium deposition method, molecular beam epitaxy (MBE) has the ability to incorporate large amounts of Gd into Bi{sub 2}Te{sub 3} crystal structures. High-quality rhombohedral (Gd{sub x}Bi{sub 1-x}){sub 2}Te{sub 3} films with substitutional Gd concentrations of x {<=} 0.4 were grown by MBE. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact up to the highest Gd concentration. Magnetoresistance measurements show weak antilocalization, indicating strong spin orbit interaction. Magnetometry reveals that the films are paramagnetic with a magnetic moment of 6.93 {mu}{sub B} per Gd{sup 3+} ion.

  5. Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

    SciTech Connect

    Dabrowski, J. Lippert, G.; Schroeder, T.; Lupina, G.

    2014-11-10

    Hexagonal boron nitride (h-BN) is an attractive substrate for graphene, as the interaction between these materials is weak enough for high carrier mobility to be retained in graphene but strong enough to allow for some epitaxial relationship. We deposited graphene on exfoliated h-BN by molecular beam epitaxy (MBE), we analyzed the atomistic details of the process by ab initio density functional theory (DFT), and we linked the DFT and MBE results by random walk theory. Graphene appears to nucleate around defects in virgin h-BN. The DFT analysis reveals that sticking of carbon to perfect h-BN is strongly reduced by desorption, so that pre-existing seeds are needed for the nucleation. The dominant nucleation seeds are C{sub N}C{sub B} and O{sub N}C{sub N} pairs and B{sub 2}O{sub 3} inclusions in the virgin substrate.

  6. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber.

    PubMed

    Hutchins, T; Nazari, M; Eridisoorya, M; Myers, T M; Holtz, M

    2015-01-01

    A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.

  7. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications.

    PubMed

    Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

    2015-06-01

    SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.

  8. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

    SciTech Connect

    Hutchins, T.; Nazari, M.; Eridisoorya, M.; Myers, T. M.; Holtz, M.

    2015-01-15

    A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.

  9. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  10. Crystalline oxides on silicon.

    PubMed

    Reiner, James W; Kolpak, Alexie M; Segal, Yaron; Garrity, Kevin F; Ismail-Beigi, Sohrab; Ahn, Charles H; Walker, Fred J

    2010-07-20

    This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced semiconductor technology. Oxide epitaxy in materials systems achieved through conventional deposition techniques is described first, followed by a description of the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface. An interdisciplinary approach involving MBE, advanced real-space structural characterization, and first-principles theory has led to a detailed understanding of the process by which the interface between crystalline oxides and silicon forms, the resulting structure of the interface, and the link between structure and functionality. Potential applications in electronics and photonics are also discussed.

  11. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  12. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy.

    PubMed

    Lu, Shulong; Ji, Lian; He, Wei; Dai, Pan; Yang, Hui; Arimochi, Masayuki; Yoshida, Hiroshi; Uchida, Shiro; Ikeda, Masao

    2011-10-31

    We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.

  13. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

    NASA Astrophysics Data System (ADS)

    Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan; Uchida, Shiro; Lu, Shu-long; Yang, Hui

    2016-12-01

    We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

  14. InGaP/GaAs/InGaAsP triple junction solar cells grown using solid-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sugaya, T.; Makita, K.; Mizuno, H.; Mochizuki, T.; Oshima, R.; Matsubara, K.; Okano, Y.; Niki, S.

    2015-09-01

    We report mechanically stacked InGaP (1.9 eV)/GaAs (1.42 eV)/InGaAsP (1.0 eV) triple junction solar cells fabricated with an advanced bonding technique using Pd nanoparticle arrays. High quality InGaP/GaAs tandem top and InGaAsP bottom cells are grown on GaAs and InP substrates, respectively using solid-source molecular beam epitaxy (MBE). The InGaAsP bottom cell has an open circuit voltage (Voc) of 0.49 V, which indicates that high performance InGaAsP solar cells can be fabricated using solid-source MBE. A fabricated triple junction solar cell has a high efficiency of 25.6% with a high Voc of 2.66 V.

  15. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    SciTech Connect

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  16. High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Saunier, P.; Shih, H. D.

    1983-01-01

    The maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K-band GaAs power field-effect transistors (FETs) fabricated on the MBE wafers. An output power of 710 mW with 4.5-dB gain and 17.7 percent power-added efficiency was achieved at 21 GHz with a 1.26-mm gate width pi-gate device. A similar device with a 0.56-mm gate width produced an output power of 320 mW with 5.0-dB gain and 26.6 percent power-added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FETs operated in the K-band frequency range.

  17. Effects of shutter transients in molecular beam epitaxy.

    PubMed

    Gozu, Shin-Ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Ishikawa, Hiroshi

    2012-11-12

    : We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite effects of STs: (1) overshoot of GR and (2) increase in GR with GT and subsequent saturation. Each effect was consistent with the previous studies; however, the previous studies showed no relationships between these two effects. By considering closing time of the shutter, the two opposite effects were well understood.

  18. Spontaneous pattern formation in broad-area lasers

    NASA Astrophysics Data System (ADS)

    Krents, Anton; Anchikov, Dmitry; Molevich, Nonna; Pakhomov, Anton

    2016-10-01

    The paper studies the spontaneous formation of nonlinear optical patterns in broad area lasers. Spatiotemporal transverse dynamics of the laser is described by the Maxwell-Bloch equations (MBE). The instability of the steady-state solution leads to pattern formation. Two different types of instabilities were observed analytically (Hopf and wave). 2D numerical simulation of the MBE with the random initial conditions has been performed using a split-step Fourier method and periodic boundary conditions. Hopf instability leads to homogeneous oscillations, spatiotemporal chaos and spiral waves. In the case of wave instability, the direct numerical simulation showed that space-time (periodic, quasi-periodic, or chaotic) modulation of the uniform profile is observed. The characteristic sizes of excited patterns are in good agreement with analytical predictions. The nonlinear interaction of four travelling waves forms a square optical vortex lattice similar to the vortex lattices observed in superconductors and Bose Einstein condensate.

  19. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

    PubMed Central

    Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

    2015-01-01

    SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. PMID:27877816

  20. Growth and fabrication of proximity-coupled topological quantum wire circuits from thin InAs films

    NASA Astrophysics Data System (ADS)

    Kan, Carolyn; Xue, Chi; Bai, Yang; Eckstein, James

    The realization of topological states in strongly spin orbit coupled semiconductors proximity-coupled to conventional superconductors requires delicate materials engineering. Key areas for improvement include the crystalline quality of the semiconductor itself, but a high-quality interface between the semiconductor and superconductor is essential. Recent results have demonstrated the necessity of forming an in situ interface to eliminate the ``soft gap'' observed in earlier experiments. While much work has focused on vertically grown nanowires, we take a lithographic approach to fabricating quantum wires out of MBE-grown thin films, which allow for increased flexibility and scalability of device structures. Notably, our films are grown entirely in situ in linked MBE systems, vastly improving interface transmission and cleanliness. Aspects of growth architecture aimed toward increasing the InAs mobility, such as substrate choice and layer structure, are also discussed.

  1. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    SciTech Connect

    Egorov, A. Yu. Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Berezovskaya, T. N.; Nevedomskiy, V. N.

    2015-10-15

    It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

  2. III-nitride core–shell nanorod array on quartz substrates

    PubMed Central

    Bae, Si-Young; Min, Jung-Wook; Hwang, Hyeong-Yong; Lekhal, Kaddour; Lee, Ho-Jun; Jho, Young-Dahl; Lee, Dong-Seon; Lee, Yong-Tak; Ikarashi, Nobuyuki; Honda, Yoshio; Amano, Hiroshi

    2017-01-01

    We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core–shell nanorods were then investigated. The nanorods were highly crystalline and the core–shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates. PMID:28345641

  3. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

    SciTech Connect

    Shengurov, D. V.; Chalkov, V. Yu.; Denisov, S. A.; Shengurov, V. G.; Stepikhova, M. V.; Drozdov, M. N.; Krasilnik, Z. F.

    2013-03-15

    The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 Multiplication-Sign 10{sup -10} Torr. The oxygen and erbium concentrations in the Si layers grown at 450 Degree-Sign C is {approx}1 Multiplication-Sign 10{sup 19} and 10{sup 18} cm{sup -3}, respectively. The silicon epitaxial layers codoped with erbium and oxygen have high crystal quality and yield effective photoluminescence and electroluminescence signals with the dominant optically active Er-1 center forming upon postgrowth annealing at a temperature of 800 Degree-Sign C.

  4. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

  5. Systematic study of surface morphology, photoluminescence efficiency, and spin-detection sensitivity in (110)-oriented GaAs/AlGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Iba, Satoshi; Saito, Hidekazu; Watanabe, Ken; Ohno, Yuzo; Yuasa, Shinji

    2016-11-01

    We prepared (110)-oriented GaAs/AlGaAs multiple-quantum-well (MQW) samples by molecular beam epitaxy (MBE) under different growth conditions, and conducted systematic measurements of surface morphology, photoluminescence (PL), and spin-detection sensitivity at room temperature. Excellent surface flatness and high PL intensity were observed for the samples grown at temperatures ≥450 °C and As4/Ga flux ratios ≥40. It was found that the PL intensity of (110) MQWs was higher than that of the conventional (100) MQWs grown using the same MBE system. At the same time, we confirmed that the spin-detection sensitivity of (110) MQWs we obtained was an order of magnitude higher than that of the (100) MQWs. These results suggest that the newly developed (110) MQWs indeed have greater advantages than the conventional (100) MQWs for use in emerging spin-optical devices such as spin-controlled lasers.

  6. Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Ahtapodov, L.; Munshi, A. M.; Nilsen, J. S.; Reinertsen, J. F.; Dheeraj, D. L.; Fimland, B. O.; van Helvoort, A. T. J.; Weman, H.

    2016-11-01

    The performance of GaAs nanowire (NW) devices depends critically on the presence of crystallographic defects in the NWs such as twinning planes and stacking faults, and considerable effort has been devoted to understanding and preventing the occurrence of these. For self-catalysed GaAs NWs grown by molecular beam epitaxy (MBE) in particular, there are in addition other types of defects that may be just as important for NW-based optoelectronic devices. These are the point defects such as the As vacancy and the Ga antisite occurring due to the inherently Ga-rich conditions of the self-catalysed growth. Here we demonstrate experimentally the effects of these point defects on the optical properties of GaAs/AlGaAs core-shell NWs grown by self-catalysed MBE. The present results enable insight into the role of the point defects both on their own and in conjunction with crystallographic planar defects.

  7. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

    SciTech Connect

    Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

    2015-06-30

    SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.

  8. A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

    DOE PAGES

    Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.; ...

    2015-06-30

    SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics,more » which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.« less

  9. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

    DOE PAGES

    Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei; ...

    2016-01-06

    Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer of MoTe2.more » In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.« less

  10. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  11. Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

    1991-01-01

    Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

  12. Current transport property of n-GaN /n-6H-SiC heterojunction: Influence of interface states

    NASA Astrophysics Data System (ADS)

    Huang, Y.; Chen, X. D.; Fung, S.; Beling, C. D.; Ling, C. C.; Dai, X. Q.; Xie, M. H.

    2005-03-01

    Heterostructures of n-GaN /n-6H-SiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. Using different contact configurations, the I -V results reveal a rectifying barrier in the n-GaN /n-6H-SiC heterostructures. When GaN is negatively biased, the current is exponentially proportional to the applied voltage with the built-in barrier being 0.4-1.1eV for the HVPE samples and 0.5eV for the MBE sample. DLTS measurements reveal intense band-like deep level states in the interfacial region of the heterostructure, and the Fermi-level pinning by these deep level defects is invoked to account for the interfacial rectifying barrier of the heterostructures.

  13. Microwave, Semiconductor Research - Materials, Devices and Circuits.

    DTIC Science & Technology

    1984-03-01

    Appl. Phys., 53 (9) 6208-6213 (Sept. 1982). 1. 2. "Investigation of Capless Heat Treatment of MBE n-GaAs", S.H. Xin, W.J. Schaff, C.E.C. Wood and L.F...4 I 4. "Capped Versus Capless Heat Treatment of MBE n-GaAs", S.H. Xin, W.J. Schaff, C.E.C. Wood and L.F. Eastman, Appl. Phys. Lett., 41 (8) 742...Capless Heat Treatment of Molecular Beam Epitaxial GaAs", S.H. Xin, W.J. Schaff, C.E.C. Wood and L.F. Eastman, Appl. Phys. Lett., 41 (8) 742-744 (Oct

  14. n{sup +}-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

    SciTech Connect

    Lugani, L.; Malinverni, M.; Giraud, E.; Carlin, J.-F.; Grandjean, N.; Tirelli, S.; Marti, D.; Bolognesi, C. R.

    2014-11-17

    We report on the low-temperature growth of heavily Si-doped (>10{sup 20 }cm{sup −3}) n{sup +}-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 × 10{sup −4} Ω·cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n{sup +}-GaN/2 dimensional electron gas contact resistivity of 0.11 Ω·mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices.

  15. ZnTe nanowires grown catalytically on GaAs (001) substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Janik, E.; Sadowski, J.; DłuŻewski, P.; Kret, S.; Presz, A.; Baczewski, L. T.; Łusakowska, E.; Wróbel, J.; Karczewski, G.; Wojtowicz, T.

    2007-04-01

    We report on the first successful growth of ZnTe nanowires and on their basic structural properties. The nanowires were produced by molecular beam epitaxy (MBE) with the use of mechanism of catalytically enhanced growth. A thin layer of gold layer (3 to 20 Å thick) annealed in high vacuum prior to the nanowires growth was used as a source of catalytic nanoparticles. Annealing of GaAs substrate with gold layer, performed prior to the MBE growth, leads to formation of Au-Ga eutectic droplets. The presence of Au-Ga droplets on GaAs substrate surface induce the ZnTe nanowire growth via vapor-liquid-solid mechanism, in growth conditions differing form those used in the molecular beam epitaxial growth of ZnTe layers only in the substrate temperature.

  16. Reduction of Inhomogeneous Broadening of Exciton Luminescence in CdxZn1-xSe Ternary Alloys and CdxZn1-xSe ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply

    NASA Astrophysics Data System (ADS)

    Fujimoto, Masakatsu; Shigematsu, Hiroshi; Senda, Kazuhiko; Yoshikawa, Mitsutoshi; Kubo, Hachiya; Yamada, Yoichi; Taguchi, Tsunemasa

    1999-06-01

    Optical and structural properties of CdxZn1-xSe ternary alloy layers grown by molecular-beam epitaxy (MBE) have been studied as a function of the Se/(Cd, Zn) beam pressure ratio (BPR). With increasing Se/(Cd, Zn) BPR, the inhomogeneous broadening of exciton luminescence and the rms roughness of surfaces decreased drastically. This indicates that Se-excess supply during MBE growth suppresses alloy composition fluctuation and also enhances two-dimensional growth nucleation. Furthermore, CdxZn1-xSe ZnSe multiple quantum well (MQW) structures have been fabricated under Se-excess supply. Biexciton luminescence from MQW structures was observed, even under a cw weak excitation condition (less than 100 mW/cm2). This observation reflects the finding that exciton lifetime increase as a result of the improvement of crystalline quality, which results in the enhancement of carrier accumulation.

  17. Synthesis of the ferroelectric solid solution, Pb(Zr{sub 1-x}Ti{sub x})O{sub 3} on a single substrate using a modified molecular beam epitaxy technique

    SciTech Connect

    Anderson, P. S.; Guerin, S.; Hayden, B. E.; Khan, M. A.; Bell, A. J.; Han, Y.; Pasha, M.; Whittle, K. R.; Reaney, I. M.

    2007-05-14

    High-throughput synthesis of the ferroelectric solid solution Pb(Zr{sub 1-x}Ti{sub x})O{sub 3} (PZT) on single Pt/Ti/SiO{sub 2}/Si substrates was demonstrated using a modified molecular beam epitaxy (MBE) system. The PZT films exhibited a phase transition from rhombohehdral to tetragonal symmetry as a function of Zr:Ti ratio, across the substrate diagonal. This was consistent with the presence of a morphotropic phase boundary at Zr:Ti ratio of 0.64:0.36, different from the value of 0.53:0.47 observed for bulk ceramics. All points on the films exhibited ferroelectric hysteresis. Results demonstrate the feasibility of high-throughput MBE for deposition of complex ferroelectric oxides, and pave the way for further materials discovery.

  18. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy.

    PubMed

    Baiutti, Federico; Christiani, Georg; Logvenov, Gennady

    2014-01-01

    In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2- x Sr x NiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.

  19. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  20. Molecular beam epitaxial growth of CdZnS using elemental sources

    NASA Astrophysics Data System (ADS)

    Wu, B. J.; Cheng, H.; Guha, S.; Haase, M. A.; De Puydt, J. M.; Meis-Haugen, G.; Qiu, J.

    1993-11-01

    We report on the first molecular beam epitaxial (MBE) growth of CdZnS on (100) GaAs substrates using elemental Zn, Cd, and S sources. Single crystal cubic CdZnS layers lattice matched to GaAs have been successfully prepared. The competition in incorporation between Cd and Zn under different sulfur flux conditions is investigated. Under appropriate growth conditions, the Cd1-xZnxS composition is directly related only to the ratio of the group II beam equivalent pressures. The background sulfur in the MBE growth chamber is found to etch the freshly thermally cleaned GaAs substrates and generate high density of pits on the surfaces. Methods to prevent the sulfur etching are also discussed.

  1. A method of producing high quality oxide and related films on surfaces

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

  2. Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

    NASA Astrophysics Data System (ADS)

    Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi

    2012-08-01

    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.

  3. In situ reflectance and virtual interface analysis for compound semiconductor process control

    SciTech Connect

    Breiland, W.G.; Hou, H.Q.; Hammons, B.E.; Klem, J.F.

    1998-05-01

    The authors review the use of in-situ normal incidence reflectance, combined with a virtual interface model, to monitor and control the growth of complex compound semiconductor devices. The technique is being used routinely on both commercial and research metal-organic chemical vapor deposition (MOCVD) reactors and in molecular beam epitaxy (MBE) to measure growth rates and high temperature optical constants of compound semiconductor alloys. The virtual interface approach allows one to extract the calibration information in an automated way without having to estimate the thickness or optical constants of the alloy, and without having to model underlying thin film layers. The method has been used in a variety of data analysis applications collectively referred to as ADVISOR (Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance). This very simple and robust monitor and ADVISOR method provides one with the equivalent of a real-time reflection high energy electron reflectance (RHEED) tool for both MBE and MOCVD applications.

  4. High current beam transport with multiple beam arrays

    SciTech Connect

    Kim, C.H.

    1985-05-01

    Highlights of recent experimental and theoretical research progress on the high current beam transport of single and multiple beams by the Heavy Ion Fusion Accelerator Research (HIFAR) group at the Lawrence Berkeley Laboratory (LBL) are presented. In the single beam transport experiment (SBTE), stability boundaries and the emittance growth of a space charge dominated beam in a long quadrupole transport channel were measured and compared with theory and computer simulations. Also, a multiple beam ion induction linac (MBE-4) is being constructed at LBL which will permit study of multiple beam transport arrays, and acceleration and bunch length compression of individually focused beamlets. Various design considerations of MBE-4 regarding scaling laws, nonlinear effects, misalignments, and transverse and longitudinal space charge effects are summarized. Some aspects of longitudinal beam dynamics including schemes to generate the accelerating voltage waveforms and to amplify beam current are also discussed.

  5. III-nitride core-shell nanorod array on quartz substrates.

    PubMed

    Bae, Si-Young; Min, Jung-Wook; Hwang, Hyeong-Yong; Lekhal, Kaddour; Lee, Ho-Jun; Jho, Young-Dahl; Lee, Dong-Seon; Lee, Yong-Tak; Ikarashi, Nobuyuki; Honda, Yoshio; Amano, Hiroshi

    2017-03-27

    We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core-shell nanorods were then investigated. The nanorods were highly crystalline and the core-shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

  6. Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael E.; Elliott, S. Tom; Holland, Stephen E.; Nikzad, Shouleh

    2005-01-01

    A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

  7. United States Air Force Summer Faculty Research Program 1989. Program Technical Report. Volume 3

    DTIC Science & Technology

    1989-12-01

    doppler broadened transitions by Holstein12 . We have used the functional form of Holstein and incorporated the 30 % increase 13 suggested by Phelps g...impact excitation of the 4 D level",J.Phys.B.,7,pp.2003-2020,1974. 12. T. Holstein ,"Imprisonment of Resonance Radiation in Gases. II",Physical Rev.,83...Backward Propagation Network FUNCTIONAL LINK NETWORKS Output Layer Devce ovice’lt one mNtdtq Camer Cowe . Oopng Corlc Functional MBE Input Characteristics

  8. Solid State Research

    DTIC Science & Technology

    2000-04-20

    6.1 Temperature Dependence of FMR Linewidth from Rare-Earth Impurities in Magnetic Garnets 37 7. ADVANCED SILICON TECHNOLOGY 41 7.1 A...Whall and Parker [1] first suggested using multilayer systems prepared by molecular-beam epitaxy (MBE) for improved thermoelectric materials. Several...DEVICE TECHNOLOGY 6.1 TEMPERATURE DEPENDENCE OF FMR LINEWIDTH FROM RARE-EARTH IMPURITIES IN MAGNETIC GARNETS Transmission of microwave energy

  9. Low Noise Mid-Wavelength IR Photodetectors

    DTIC Science & Technology

    2014-02-19

    Several ICIP structures were grown by MBE and fabricated into devices with a cut -off wavelength near 4-5 µm. Experimental results obtained from these... cut -off wavelength near 4-5 µm. Experimental results obtained from these devices have indicated improved device performance at high temperatures...zone (3), consisting of several GaSb/AlSb QWs. Zone (2) is composed of a series of digitally-graded InAs/AlSb QWs that form an energy ladder with

  10. Growing Gallium Arsenide On Silicon

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, Gouri

    1989-01-01

    Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

  11. Gallium Arsenide Pilot Line for High Performance Components

    DTIC Science & Technology

    1990-01-16

    were issued on August 8, 1989, two weeks behind schedule, but early enough to have no impact on the mask shop submittal. During the summer, Professor...relatively high level of carbon, there is little impact on device characteristics from the Si. However, with the modified MBE process using the UV ozone...clean, the presence of the silicon is predicted to have an impact on the threshold voltage. The source of the silicon contamination is under active

  12. AADL and Model-based Engineering

    DTIC Science & Technology

    2014-10-20

    University Outline Challenges in Safety-critical Software-intensive systems An Architecture-centric Virtual Integration Strategy with SAE AADL...Architecture-centric Virtual Integration Strategy with SAE AADL Improving the Quality of Requirements Architecture Fault Modeling and Safety Incremental Life...The best of MetaH and ACME 15 AADL and MBE Feiler, Oct 20, 2014 © 2014 Carnegie Mellon University SAE Architecture Analysis & Design Language

  13. Proof Checking the RSA (Rivest, Shamir and Adleman) Public Key Encryption Algorithm.

    DTIC Science & Technology

    1982-09-01

    Fermat’s theorem, number theory , pigeon hole principle. 20. ABSTRACT (Continue an reverse sde it neceeseand Ideify by block nu mbe r) The authors...of integers modulo (p-1)*(q-1). .. Among the lemmas proved mechanically and used in the ma _Aroof are many familia theorems of number theory ...the ring of integers modulo (p-1)*(q-1). Among the lemmas proved mechanically and used in the main proof are many familiar theorems of number theory

  14. Understanding the Potential and Limitations of Dilute Nitride Alloys for Solar Cells

    SciTech Connect

    Kurtz, S.; Ptak, A.; Johnston, S.; Kramer, C.; Young, M.; Friedman, D.; Geisz, J.; McMahon, W.; Kibbler, A.; Olson, J.; Crandall, R.; Branz, H.

    2005-11-01

    Dilute nitride alloys provide a powerful tool for engineering the band gap and lattice constant of III-V alloys. However, nitrogen degrades the performance of GaAs solar cells. This project seeks to understand and demonstrate the limits of performance of GaInNAs alloys by (a) correlating deep-level transient spectroscopy (DLTS) data with device performance and (b) using molecular beam epitaxy (MBE) to reduce background impurity concentrations.

  15. European Scientific Notes. Volume 38, Number 2.

    DTIC Science & Technology

    1984-02-01

    Hall - meeting. The conferences have reflected resistivity P exhibits quantized *’ the continuing progress in two-dimen- lateaus in xy sioalsysem. or...doping, in Hall resistance assumes its quantized combination with molecular beam epitaxy values p = h/ne2, (n = 1, 2, 3,...) (MBE), has permitted...generation of xy two-dimensional electron systems at the the diagonal resistivity pxx goes to junction between two III-V semiconductor zero as the

  16. Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

    SciTech Connect

    Heyn, Ch.; Sonnenberg, D.; Graf, A.; Kerbst, J.; Stemmann, A.; Hansen, W.

    2014-05-15

    Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.

  17. Mn2Au: body-centered-tetragonal bimetallic antiferromagnets grown by molecular beam epitaxy.

    PubMed

    Wu, Han-Chun; Liao, Zhi-Min; Sofin, R G Sumesh; Feng, Gen; Ma, Xiu-Mei; Shick, Alexander B; Mryasov, Oleg N; Shvets, Igor V

    2012-12-11

    Mn(2)Au, a layered bimetal, is successfully grown using molecular beam epitaxy (MBE). The experiments and theoretical calculations presented suggest that Mn(2)Au film is antiferromagnetic with a very low critical temperature. The antiferromagnetic nature is demonstrated by measuring the exchange-bias effect of Mn(2)Au/Fe bilayers. This study establishes a primary basis for further research of this new antiferromagnet in spin-electronic device applications.

  18. Growth of Nanoscale BaTiO3/SrTiO3 Superlattices by Molecular-Beam Epitaxy

    DTIC Science & Technology

    2008-05-01

    Daimon: Fabrication of barium titanate /strontium titanate artificial superlattice by atomic layer epitaxy. Jpn. J. Appl. Phys., Pt. 1 33, 5192 (1994...GdScO3, and (101) SmScO3 substrates by reactive MBE. The strontium and barium fluxes were produced by sublimat- ing elemental strontium and barium ...QCM) located directly in front of the substrate was used to get a rough (±5%) idea of the barium , strontium, and titanium mo- lecular beam fluxes

  19. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  20. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  1. Programmatic Impact of SDRAM SEFI

    NASA Technical Reports Server (NTRS)

    Guertin, Steven M.; Allen, Gregory R.; Sheldon, Douglas J.

    2012-01-01

    The Elpida EDS5104(08)ABTA 512Mb SDRAM is examined for programmatic impact of SEE. Use cases for the devices including EDAC and mode register reload are examined. Results indicate some SEE mitigation methods require careful application to achieve system-level benefits, while some event types are essentially mitigated by the application use. In the studied devices MBE and SEFI are identified and investigated as mechanisms requiring special consideration.

  2. Quantum Metaphotonics

    DTIC Science & Technology

    2016-03-24

    This included optimizing the MBE growth conditions of a near-surface quantum wells with emission around 1500nm and fabrication of arrays of various...antennas and near-surface quantum-confined structures. This included optimizing the molecular beam epitaxy growth conditions of a near-surface quantum...due to the single process epitaxial growth , increases the interaction. Low densities of indium islands have been shown to increase the

  3. Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

    DTIC Science & Technology

    2015-09-01

    the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth ...photon recycling effects. However, the effect of the growth of the BR on the deep level trap density of the GaAs active layer that determines the...immediately after excitation at a low intensity, low-injection regime conditions 4 exist and a single exponential decay is observed. The

  4. Astronomically-induced Mid-Brunhes Transition in the Southern and Deep Oceans

    NASA Astrophysics Data System (ADS)

    Yin, Qiuzhen

    2013-04-01

    The interglacials after 430 ka (ka: 1000 years) ago were characterized by warmer climates and higher atmospheric CO2 concentrations than the interglacials before, but the cause of this climatic transition (the so-called Mid-Brunhes Event, MBE) is unknown. Based on model simulations, my results show that, in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic Bottom Water formation and Southern Ocean ventilation. My results also show that strong Westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward visible systematic difference in the astronomical parameters between the interglacials before and after 430 ka ago. Rather than being a real "event", the apparent MBE (i.e. the difference in the interglacial intensity before and after 430 ka BP) appears in my results to come from the complex response of the climate system to the astronomical and insolation forcings prevailing before and after 430 ka BP. This does not mean that nothing could have happened between MIS-13 and MIS-11 which might have amplified such difference. Given the important roles of the Southern and Deep Oceans on the carbon cycle, these findings are a first step towards understanding the magnitude change of the interglacial CO2 concentration around 430 ka. Reference: Yin Q.Z., 2013. Insolation-induced Mid-Brunhes Transition in the Southern and Deep Oceans. Nature, DOI 10.1038/nature11790. Acknowledgement: This work is supported by the European Research Council

  5. Investigation of the {Fe}/{Si} interface and its phase transformations

    NASA Astrophysics Data System (ADS)

    Fanciulli, M.; Degroote, S.; Weyer, G.; Langouche, G.

    1997-04-01

    Thin 57Fe films (3-10 Å) have been grown by molecular beam epitaxy (MBE) on (7 × 7) reconstructed Si(111) and (2 × 1) reconstructed Si(001) surfaces and by e-gun evaporation on an H-terminated Si(111) surface. Conversion electron Mössbauer spectroscopy (CEMS) with high statistical accuracy and resolution allowed a detailed microscopic investigation of the silicide formation mechanism and of the structural phase transformations upon annealing.

  6. Vacancy complexes in Sb-doped SnO{sub 2}

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.

    2014-02-21

    MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

  7. Prototype Environmental Digital Data for Materiel Design, Testing, and Evaluation

    DTIC Science & Technology

    1990-10-01

    areas (cities, towns, and villages) and for structure heights and densi- ties had already been compiled in digital format from the WES study by Doiron ...description of the procedures used in the collection of the field data is provided by Doiron and West (1988). Site-Specific Data 32. High-resolution (2.5-m...be developed for other geographic areas for which materiel will be designed and fielded for operational use. 15 REFERENCES Doiron , Phillip L., and

  8. Combat Vehicle Command and Control Systems. 1. Simulation-Based Company- Level Evaluation

    DTIC Science & Technology

    1992-04-01

    States Army Research Institute for the Behavioral and Social Sciences Approved for public release; distribution is unlimited. C -i U.S. ARMY RESEARCH...INSTITUTE FOR THE BEHAVIORAL AND SOCIAL SCIENCES A Field Operating Agency Under the Jurisdiction of the Deputy Chief of Staff for Personnel EDGAR M...be destroyed when it is no longer needed. Please do not return it to the U.S. Army Research Institute for the Behavioral and Social Sciences. NOTE

  9. ONR Far East Scientific Bulletin, Volume 7, Number 2, April-June 1982,

    DTIC Science & Technology

    1982-01-01

    part of the scientific literature) will prove to be of value to scientists by providing items of interest well in advance of the usual scientific...Computer System (FGCS) Asia University- industry R&D Creativity Molecular beam epitaxy (MBE) Individualism Japan Familism Semiconductor development Japan...engineering. Seikoh Sakiyama, Science Advisor of ONR Far East, has had considerable industrial experience in laboratory chemistry, electronic

  10. Principles of models based engineering

    SciTech Connect

    Dolin, R.M.; Hefele, J.

    1996-11-01

    This report describes a Models Based Engineering (MBE) philosophy and implementation strategy that has been developed at Los Alamos National Laboratory`s Center for Advanced Engineering Technology. A major theme in this discussion is that models based engineering is an information management technology enabling the development of information driven engineering. Unlike other information management technologies, models based engineering encompasses the breadth of engineering information, from design intent through product definition to consumer application.

  11. On local pairs vs. BCS: Quo vadis high-Tc superconductivity

    SciTech Connect

    Pavuna, D.; Dubuis, G.; Bollinger, A. T.; Wu, J.; He, X.; Bozovic, I.

    2016-07-28

    Since the discovery of high-temperature superconductivity in cuprates, proposals have been made that pairing may be local, in particular in underdoped samples. Furthermore, we briefly review evidence for local pairs from our experiments on thin films of La 2–xSrxCuO4, synthesized by atomic layer-by-layer molecular beam epitaxy (ALL-MBE).

  12. European Science Notes Information Bulletin Reports on Current European/ Middle Eastern Science

    DTIC Science & Technology

    1991-01-01

    enhanced corrosion, and molecular biology in general. Scientists involved in the microanalysis of biological phenomena will also find this article of...Processing 15 Molecular and Particle Modelling 4 transputers are radiation hard and can withstand 20-30 Operating Systems 2 Krad (1 Krad is lethal to a...excessively expensive (MOCVD), and molecular beam epitaxy (MBE). The equipment. materials under investigation include: the zinc The material used for

  13. Programme and Abstracts. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (1st) Held in Ecole Centrale De Lyon, France on 19 -22 May 1992. (EXAMTEC’ 92)

    DTIC Science & Technology

    1992-05-22

    InP system which may affect the performance, reproducibility and stability of devices. Molecular Beam Epitaxy (MBE) was used to grow In.Ga,.As/Ino,,AI...1991). RAMAN SCATTERING IN In XGalx As / GaAs SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXY M. CONSTANT, N. MATRULLO, A. LORRIAUX Laboratoire de...Raman scattering in a series of In Ga 1 As/GaAsx - strained-layer superlattices grown by molecular beam epitaxy on (001) surfaces of GaAs substrates

  14. Molecular epitaxy of pseudomorphic Ge1-y Sn y (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

    NASA Astrophysics Data System (ADS)

    Wallace, P. M.; Senaratne, C. L.; Xu, Chi; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2017-02-01

    A low-pressure CVD technique was specifically developed to prepare a new class of pseudomorphic Ge1-y Sn y layers, with an Sn content up to 17% on Ge-buffered Si(100) wafers. The growth is conducted via reactions of SnD4 and the recently deployed Ge4H10 custom precursor, whose large molecular weight and enhanced reactivity enables depositions at unprecedented ultra-low temperatures (150 °C-200 °C), and at pressures akin to those typically employed in solid/gas-source MBE. The thicknesses of the layers far exceed the critical limits predicted by thermodynamic considerations and are either comparable to, or larger than, those observed for MBE-grown samples. This is validated by modeling of the thickness versus the composition for the fully strained and partially relaxed alloys produced in this work relative to the MBE and CVD-grown analogs reported in the literature. Furthermore, the practical relevance of the technique was demonstrated by creating highly doped n-type alloys, which were then used as active layers to fabricate degenerate pn junctions. It was also found that the strained films gradually relax with increasing thickness, providing new types of strain-free material with enhanced optical quality relative to those produced by standard CVD methods, as evidenced by the photoluminescence studies. The strain relaxation mechanism appears to be similar to that observed in CVD-grown samples, with no sign of epitaxial breakdown or precipitous degradation of the bulk crystallinity or surface morphology, in spite of the low growth temperatures employed. Finally, we note that this method represents the first example of a chemically driven route that delivers materials with the desirable properties afforded by MBE, while offering the potential for those practical applications inherent to large-scale CVD.

  15. Long-Wave Type-II Superlattice Detectors with Unipolar Electron and Hole Barriers

    DTIC Science & Technology

    2012-12-01

    molecular beam epitaxy (MBE) system. This system was equipped with SUMO® cells for gallium and indium , a standard effusion cell for aluminum, and...Lockheed- Martin, BAE Systems, Loral, Honeywell, and Tyco International. During his career, He has worked to develop ribbon silicon solar cells , as...development of quantum-structured solar cells and other advanced photovoltaic device designs, and was a fellow of the NASA Graduate Student Researcher’s

  16. Phototransistors Development and their Applications to Lidar

    NASA Technical Reports Server (NTRS)

    Abedin, M. N.; Refaat, Tamer F.; Ismail, Syed; Singh, Upendra N.

    2007-01-01

    Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively.

  17. Real time measurement of epilayer strain using a simplified wafer curvature technique

    SciTech Connect

    Floro, J.A.; Chason, E.; Lee, S.R.

    1995-12-31

    We describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain in real time during MBE or CVD growth. We demonstrate, using growth of SiGe alloys on Si, that the critical thickness for misfit dislocation can clearly be resolved, and that the subsequent strain relaxation kinetics during growth or post-growth annealing are readily obtained.

  18. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    DTIC Science & Technology

    1992-06-01

    AD-A253 331 Semiannual Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication...Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using...34 substrates, such as using a graded AlxGal-xN solid solution as a buffer layer. E. Conclusion We have shown that in the use of our modified gas source MBE

  19. Model-Based Enterprise Summit Report

    DTIC Science & Technology

    2014-02-01

    quality improvement, and product/component cost reduction. Key challenges include the introduction of new materials, material systems, and...of Standards and Technology. MBE Summit NIST, Gaithersburg, MD Green Auditorium, Bldg101 Time Topic Speaker(s) 0830-0840 Introductions and Admin...80-Column Coded Data Degraded 2D drawings Modernize Data and Data Exchange WARFIGHTER FOCUSED, GLOBALLY RESPONSIVE SUPPLY CHAIN LEADERSHIP 4

  20. Joint Services Electronics Program Progress Report.

    DTIC Science & Technology

    1982-09-30

    confirmed by experimental data 15 . Therefore, an interface material, such as silicide for silicon, must be found for com- pound semiconductors...Schottky diode. *Suitable metals such as Pt, which forms a silicide on Si, will be tried on the quaternary compound, and again the depth-profile...with coeva- poration to form the silicide phase and the Si Ge solid solution. Moreover, MBE growth can be achieved at substralex temperatures substan

  1. Biosynthesis of Enterobacterial Common Antigen: The ECA-Trace Phenotype of Salmonella Typhimurium and The Role of the rfe Gene in 08 Side-Chain Synthesis in Escherichia Coli

    DTIC Science & Technology

    1993-03-18

    in distilled water (unless noted) as follows: ampicillin, 10mg/ml; pennicillin G, I mg/ml; tetracycline, 2Smg/ml(in methanol); oxytetracycline , 2mg...each row were as follows: ampicillin, 9.4ug/ml; pennicillin G, 37Sug/ml; tetracycline, 7.Sug/ml; oxytetracycline , S.6ug/ml; carbenicillin, 37Sug/ml...deolycholate; TriX, triton XIOO; MBE, methylbenzylethonium chloride; Amp, ampicillin; Penn, pennicillin G; Tet, tetracycline; Otet, oxytetracycline ; Carb

  2. Compact Femtosecond Pulse Approach to Explosives Detection Combining InN-Based Time Domain Terahertz Spectroscopy and Laser-Induced Breakdown Spectroscopy

    DTIC Science & Technology

    2008-08-01

    Terahertz radiation field amplitude as a function of sample rotation angle for nonpolar GaN samples with varying stacking fault densities (top). Conceptual...1E6cm-1 (MOCVD), V m- GaN : SFD ~3E6cm-1 (MBE), V TH z si gn al (d V/ V ) sample angle (deg) Figure 2. Terahertz radiation field amplitude as a...Compact Femtosecond Pulse Approach to Explosives Detection Combining InN-Based Time Domain Terahertz Spectroscopy and Laser- Induced

  3. Materials Growth for InAs High Electron Mobility Transistors and Circuits

    DTIC Science & Technology

    2004-03-01

    operating at room temperature. In this application, the room- temperature mobility and carrier density need to be high ~i.e., low sheet resistance !. In some...density and mobility at 300 K; sheet resistance calculated from transport measurements; sheet resistance measured by Lehighton; and wafer nonuniformity...A typical sheet - resistance map from the 32P MBE ~50 FIG. 4. STEM image ~350 0003! of sample B after gate metallization. FIG. 5. Sheet - resistance map

  4. Efficient translation of Dnmt1 requires cytoplasmic polyadenylation and Musashi binding elements.

    PubMed

    Rutledge, Charlotte E; Lau, Ho-Tak; Mangan, Hazel; Hardy, Linda L; Sunnotel, Olaf; Guo, Fan; MacNicol, Angus M; Walsh, Colum P; Lees-Murdock, Diane J

    2014-01-01

    Regulation of DNMT1 is critical for epigenetic control of many genes and for genome stability. Using phylogenetic analysis we characterized a block of 27 nucleotides in the 3'UTR of Dnmt1 mRNA identical between humans and Xenopus and investigated the role of the individual elements contained within it. This region contains a cytoplasmic polyadenylation element (CPE) and a Musashi binding element (MBE), with CPE binding protein 1 (CPEB1) known to bind to the former in mouse oocytes. The presence of these elements usually indicates translational control by elongation and shortening of the poly(A) tail in the cytoplasm of the oocyte and in some somatic cell types. We demonstrate for the first time cytoplasmic polyadenylation of Dnmt1 during periods of oocyte growth in mouse and during oocyte activation in Xenopus. Furthermore we show by RNA immunoprecipitation that Musashi1 (MSI1) binds to the MBE and that this element is required for polyadenylation in oocytes. As well as a role in oocytes, site-directed mutagenesis and reporter assays confirm that mutation of either the MBE or CPE reduce DNMT1 translation in somatic cells, but likely act in the same pathway: deletion of the whole conserved region has more severe effects on translation in both ES and differentiated cells. In adult cells lacking MSI1 there is a greater dependency on the CPE, with depletion of CPEB1 or CPEB4 by RNAi resulting in substantially reduced levels of endogenous DNMT1 protein and concurrent upregulation of the well characterised CPEB target mRNA cyclin B1. Our findings demonstrate that CPE- and MBE-mediated translation regulate DNMT1 expression, representing a novel mechanism of post-transcriptional control for this gene.

  5. Fully Coupled Thermoelectromechanical Analysis of GaN High Electron Mobility Transistor Degradation

    DTIC Science & Technology

    2012-04-05

    heterostructures using the epitaxial techni- ques of MBE or metalorganic chemical vapor deposition (MOCVD) (with the layer thicknesses assumed to be...consist of an in-plane biaxial strain imposed by the epitaxial growth plus an elastic response in the vertical direction associated with Poisson’s ratio...cell. III . VERIFICATION Although the continuum theory set forth in Sec. II is the accepted description of piezoelectric semiconductors , the evidence for

  6. Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

    NASA Astrophysics Data System (ADS)

    Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

    2016-10-01

    We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

  7. 2.4 Micrometer Cutoff Wavelength AlGaAsSb/InGaAsSb Phototransistors

    NASA Technical Reports Server (NTRS)

    Sulima, O. V.; Swaminathan, K.; Refaat, T. F.; Faleev, N. N.; Semenov, A. N.; Solov'ev, V. A.; Ivanov, S. V.; Abedin, M. N.; Singh, U. N.; Prather, D.

    2006-01-01

    We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C).

  8. Surface and Interfacial Properties of Ga0.47In0.53As Alloys.

    DTIC Science & Technology

    2014-09-26

    S. TYPE OF REPORT & PERIOD COVERED Surface and Interfacial Properties of Final Report Ga0 471n0 53As Alloys April 1. 󈨘 to March 31,󈨙S. PERFORMING...for growing binary and ternary III-V alloy semiconducting layers. Gallium arsenide layers grown with this MBE system have electrical properties which... properties and impurity * 2 doping with both donors and acceptors of this system. However, the availability of the two ternary alloys : Ino 52A10 48As

  9. GaAs/GaAlAs device structures prepared by molecular beam epitaxy using indium-free mounting techniques

    SciTech Connect

    SpringThorpe, A.J.; Mandeville, P.

    1986-07-01

    A simple indium-free mount is described for the VG-Semicon V80-H MBE system. In conjunction with nonstandard substrate preparation techniques, the use of this mount has enabled GaAs/GaAlAs device structures to be prepared with consistently low (< or =200/cm/sup 2/) oval defect concentrations. Both 2DEG structures, with high 4 K mobilities, and GRINSCH lasers, with low thresholds, have been prepared to demonstrate the capabilities of the mounting procedures.

  10. 2004 Army Research Office in Review

    DTIC Science & Technology

    2004-01-01

    ASIC chip for the 7-bit Discrete Wavelet Transform was designed. To enable the direct comparison of conventional/ recovering power dissipation, the...fraction of overall power, and resonant clocking saves less chip energy overall. Figure 3. ASIC chip for the 7-bit...on MBE growth and characterization of HgCdTe. At NVESD they have collaborated in the area of X-ray studies of HgCdTe and CZT substrates to reveal

  11. Ultraviolet Electrically Injected Light Sources With Epitaxial ZnO-Based Heterojunctions

    DTIC Science & Technology

    2007-08-01

    lighting, UV spectroscopy, and solar blind detectors and imaging arrays, and transparent electronics for displays. These UV devices can also serve to meet...Air Force objectives in areas covert tactical communications, high-speed information processing, solar blind sensing and imaging, and UV spectroscopy...Zn effusion cell resistant to source oxidation have been installed to facilitate ZnO growth. The existing MBE system has demonstrated the ability to

  12. Advanced silicon on insulator technology

    NASA Technical Reports Server (NTRS)

    Godbey, D.; Hughes, H.; Kub, F.

    1991-01-01

    Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

  13. The Universal Dynamics of Tumor Growth

    PubMed Central

    Brú, Antonio; Albertos, Sonia; Luis Subiza, José; García-Asenjo, José López; Brú, Isabel

    2003-01-01

    Scaling techniques were used to analyze the fractal nature of colonies of 15 cell lines growing in vitro as well as of 16 types of tumor developing in vivo. All cell colonies were found to exhibit exactly the same growth dynamics—which correspond to the molecular beam epitaxy (MBE) universality class. MBE dynamics are characterized by 1), a linear growth rate, 2), the constraint of cell proliferation to the colony/tumor border, and 3), surface diffusion of cells at the growing edge. These characteristics were experimentally verified in the studied colonies. That these should show MBE dynamics is in strong contrast with the currently established concept of tumor growth: the kinetics of this type of proliferation rules out exponential or Gompertzian growth. Rather, a clear linear growth regime is followed. The importance of new cell movements—cell diffusion at the tumor border—lies in the fact that tumor growth must be conceived as a competition for space between the tumor and the host, and not for nutrients or other factors. Strong experimental evidence is presented for 16 types of tumor, the growth of which cell surface diffusion may be the main mechanism responsible in vivo. These results explain most of the clinical and biological features of colonies and tumors, offer new theoretical frameworks, and challenge the wisdom of some current clinical strategies. PMID:14581197

  14. Insight into the microstructural characterization of ferritic steels using micromagnetic parameters

    SciTech Connect

    Moorthy, V.; Vaidyanathan, S.; Raj, B.; Jayakumar, T.; Kashyap, B.P.

    2000-04-01

    The influence of tempering-induced microstructural changes on the micromagnetic parameters such as magnetic Barkhausen emission (MBE), coercive force (H{sub c}), residual induction (B{sub r}), and maximum induction (B{sub max}) has been studied in 0.2 pct carbon steel, 2.25Cr-1Mo steel, and 9Cr-1Mo steel. It is observed that, after short tempering, the micromagnetic parameters show more or less linear correlation with hardness, which is attributed to the reduction in dislocation density, but long-term tempering produces nonlinear behavior. The variation in each of these parameters with tempering time has been explained based on the changes in the size and distribution of ferrite laths/grains and precipitates. It has been shown that the individual variation in the microstructural features such as size and distribution of laths/grains and precipitates during tempering can be clearly identified by the MBE parameters, which is not possible from the hysteresis loop parameters (H{sub c} and B{sub r}). It is also shown that the MBE parameters cannot only be used to identify different stages of tempering but also to quantify the average size of laths/grains and second-phase precipitates.

  15. Solar Activity Studies using Microwave Imaging Observations

    NASA Technical Reports Server (NTRS)

    Gopalswamy, N.

    2016-01-01

    We report on the status of solar cycle 24 based on polar prominence eruptions (PEs) and microwave brightness enhancement (MBE) information obtained by the Nobeyama radioheliograph. The north polar region of the Sun had near-zero field strength for more than three years (2012-2015) and ended only in September 2015 as indicated by the presence of polar PEs and the lack of MBE. The zero-polar-field condition in the south started only around 2013, but it ended by June 2014. Thus the asymmetry in the times of polarity reversal switched between cycle 23 and 24. The polar MBE is a good proxy for the polar magnetic field strength as indicated by the high degree of correlation between the two. The cross-correlation between the high- and low-latitude MBEs is significant for a lag of approximately 5.5 to 7.3 years, suggesting that the polar field of one cycle indicates the sunspot number of the next cycle in agreement with the Babcock-Leighton mechanism of solar cycles. The extended period of near-zero field in the north-polar region should result in a weak and delayed sunspot activity in the northern hemisphere in cycle 25.

  16. Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Wang, W. I.

    2013-10-01

    GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50% As and 50% Sb, lattice-matched to an InP substrate; it exhibits a miscibility gap, which is a significant problem for crystal growth. This paper addresses the effect of substrate tilting on the material properties of GaAsSb alloys closely lattice-matched to InP substrates by molecular beam epitaxy (MBE). InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth, then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution X-ray diffraction, photoluminescence (PL), Raman scattering, and transmission-line measurements (TLM). Substrate tilting improved the GaAsSb alloys with crystalline quality, shown by a narrower x-ray linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt. The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.

  17. Characterization of aging-induced microstructural changes in M250 maraging steel using magnetic parameters

    NASA Astrophysics Data System (ADS)

    Rajkumar, K. V.; Vaidyanathan, S.; Kumar, Anish; Jayakumar, T.; Raj, Baldev; Ray, K. K.

    2007-05-01

    The best combinations of mechanical properties (yield stress and fracture toughness) of M250 maraging steel is obtained through short-term thermal aging (3-10 h) at 755 K. This is attributed to the microstructure containing precipitation of intermetallic phases in austenite-free low-carbon martensite matrix. Over-aged microstructure, containing reverted austenite degrades the mechanical properties drastically. Hence, it necessitates identification of a suitable non-destructive evaluation (NDE) technique for detecting any reverted austenite unambiguously during aging. The influence of aging on microstructure, room temperature hardness and non-destructive magnetic parameters such as coercivity ( Hc), saturation magnetization ( Ms) and magnetic Barkhausen emission (MBE) RMS peak voltage is studied in order to derive correlations between these parameters in aged M250 maraging steel. Hardness was found to increase with precipitation of intermetallics during initial aging and decrease at longer durations due to austenite reversion. Among the different magnetic parameters studied, MBE RMS peak voltage was found to be very sensitive to austenite reversion (non-magnetic phase) as they decreased drastically up on initiation of austenite reversion. Hence, this parameter can be effectively utilized to detect and quantify the reverted austenite in maraging steel specimen. The present study clearly indicates that the combination of MBE RMS peak voltage and hardness can be used for unambiguous characterization of microstructural features of technological and practical importance (3-10 h of aging duration at 755 K) in M250 grade maraging steel.

  18. High-efficiency AlGaInP solar cells grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Faucher, J.; Sun, Y.; Jung, D.; Martin, D.; Masuda, T.; Lee, M. L.

    2016-10-01

    AlGaInP is an ideal material for ultra-high efficiency, lattice-matched multi-junction solar cells grown by molecular beam epitaxy (MBE) because it can be grown lattice-matched to GaAs with a wide 1.9-2.2 eV bandgap. Despite this potential, AlGaInP grown by molecular beam epitaxy (MBE) has yet to be fully explored, with the initial 2.0 eV devices suffering from poor performance due to low minority carrier diffusion lengths in both the emitter and base regions of the solar cell. In this work, we show that implementing an AlGaInP graded layer to introduce a drift field near the front surface of the device enabled greatly improved internal quantum efficiency (IQE) across all wavelengths. In addition, optimizing growth conditions and post-growth annealing improved the long-wavelength IQE and the open-circuit voltage of the cells, corresponding to a 3× increase in diffusion length in the base. Taken together, this work demonstrates greatly improved IQE, attaining peak values of 95%, combined with an uncoated AM1.5G efficiency of 10.9%, double that of previously reported MBE-grown devices.

  19. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  20. Zinc-blende (Cubic) GaN and AlGaN Layers, Structures and Bulk Crystals by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Novikov, Sergei V.; Zainal, Norzaini; Akimov, Andrey V.; Staddon, Chris R.; Foxon, C. Thomas; Kent, Anthony J.

    2010-11-01

    We have studied the growth of zinc-blende GaN and AlGaN layers, structures and bulk crystals by molecular beam epitaxy (MBE). We have developed a process for growth by MBE of free-standing cubic GaN layers. Undoped thick cubic GaN films were grown on semi-insulating GaAs (001) substrates by a modified plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The resulting free-standing GaN wafers with thicknesses in the 30-100 μm range may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have developed procedures to cleave the wafers into 10×10 mm2 square substrates and to polish them to produce epi-ready surfaces. The first GaN/InGaN LEDs on our zinc-blende GaN substrates have been demonstrated by our collaborators at Sharp Laboratories of Europe.

  1. High efficiency cadmium and zinc telluride-based thin film solar cells

    SciTech Connect

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. . School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  2. Structure of Ge(100) surfaces for high-efficiency photovoltaic applications

    SciTech Connect

    Olson, J.M.; McMahon, W.E.

    1998-09-01

    While much is known about the Ge(100) surface in a UHV/MBE environment, little has been published about this surface in an MOCVD environment. The main objective of this study is to determine the structure of the surface of Ge substrates in the typical MOCVD reactor immediately prior to and following the heteronucleation of GaAs and other lattice-matched III-V alloys, and to determine the conditions necessary for the growth of device-quality epilayers. In this paper the authors present the first STM images of the MOCVD-prepared Ge surfaces. Although many of the observed features are very similar to UHV- or MBE-prepared surfaces, there are distinct and important differences. For example, while the As-terminated surfaces for MBE-Ge and MOCVD-Ge are virtually identical, the AsH{sub 3}-treated surfaces in an MOCVD reactor are quite different. The terrace reconstruction is rotated by {pi}/2, and significant step bunching or faceting is also observed. Time-dependent RD kinetic studies also reveal, for the first time, several interesting features: the transition rate from an As-terminated (1 x 2) terrace reconstruction to a stable AsH{sub 3}-annealed surface is a function of the substrate temperature, substrate miscut from (100) and AsH{sub 3} partial pressure, and, for typical prenucleation conditions, is relatively slow. These results explain many of the empirically derived nucleation conditions that have been devised by numerous groups.

  3. Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

    SciTech Connect

    Xi, Xiaoxing

    2014-01-13

    In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.

  4. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography. Comparison Of Experiments And Simulation

    SciTech Connect

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  5. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  6. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

    NASA Astrophysics Data System (ADS)

    Steele, J. A.; Horvat, J.; Lewis, R. A.; Henini, M.; Fan, D.; Mazur, Yu. I.; Dorogan, V. G.; Grant, P. C.; Yu, S.-Q.; Salamo, G. J.

    2015-12-01

    In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation ``hot spot'' at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure.

  7. Formation and cultivation of medaka primordial germ cells.

    PubMed

    Li, Zhendong; Li, Mingyou; Hong, Ni; Yi, Meisheng; Hong, Yunhan

    2014-07-01

    Primordial germ cell (PGC) formation is pivotal for fertility. Mammalian PGCs are epigenetically induced without the need for maternal factors and can also be derived in culture from pluripotent stem cells. In egg-laying animals such as Drosophila and zebrafish, PGCs are specified by maternal germ plasm factors without the need for inducing factors. In these organisms, PGC formation and cultivation in vitro from indeterminate embryonic cells have not been possible. Here, we report PGC formation and cultivation in vitro from blastomeres dissociated from midblastula embryos (MBEs) of the fish medaka (Oryzias latipes). PGCs were identified by using germ-cell-specific green fluorescent protein (GFP) expression from a transgene under the control of the vasa promoter. Embryo perturbation was exploited to study PGC formation in vivo, and dissociated MBE cells were cultivated under various conditions to study PGC formation in vitro. Perturbation of somatic development did not prevent PGC formation in live embryos. Dissociated MBE blastomeres formed PGCs in the absence of normal somatic structures and of known inducing factors. Most importantly, under culture conditions conducive to stem cell derivation, some dissociated MBE blastomeres produced GFP-positive PGC-like cells. These GFP-positive cells contained genuine PGCs, as they expressed PGC markers and migrated into the embryonic gonad to generate germline chimeras. Our data thus provide evidence for PGC preformation in medaka and demonstrate, for the first time, that PGC formation and derivation can be obtained in culture from early embryos of medaka as a lower vertebrate model.

  8. Heavy ion fusion accelerator research (HIFAR) year-end report, April 1, 1987-September 30, 1987

    SciTech Connect

    Not Available

    1987-12-01

    The basic objective of the Heavy Ion Fusion Accelerator Research (HIFAR) program is to access the suitabilty of heavy ion accelerators as iginiters for Inertial Confinement Fusion (ICF). A specific accerelator techonolgy, the induction linac, has been studied at the Lawerence Berkeley Laboratory and has reached the point at which its viability for ICF applications can be assessed over the next few years. The HIFAR program addresses the generation of high-power, high-brightness beams of heavy ions, the understanding of the scaling laws in this novel physics regime, and the vadidation of new accelerator strategies, to cut costs. The papers in this report that address these goals are: MBE-4 mechanical progress, alignment of MBE-4, a compact energy analyzer for MBE-4, Cs/sup +/ injector modeling with the EGUN code, an improved emittance scanning system for HIFAR, 2-MV injector, carbon arc source development, beam combining in ILSE, emittance growth due to transverse beam combining in ILSE - particle simulation results, achromatic beam combiner for ILSE, additional elements for beam merging, quadrupole magnet design for ILSE, and waveforms and longitudinal beam-parameters for ILSE.

  9. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE PAGES

    Lin, Yong; Leung, Benjamin; Li, Qiming; ...

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  10. Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

    NASA Astrophysics Data System (ADS)

    Chen, R. S.; Tsai, H. Y.; Huang, Y. S.; Chen, Y. T.; Chen, L. C.; Chen, K. H.

    2012-09-01

    The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height (ϕB = 160 ± 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 ± 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

  11. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

    SciTech Connect

    Dagnelund, D.; Huang, Y. Q.; Buyanova, I. A.; Chen, W. M.; Tu, C. W.; Yonezu, H.

    2015-01-07

    By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.

  12. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  13. Minority business bidding for local government contracts: the complexity of availability.

    PubMed

    Bangs, Ralph L; Murrell, Audrey; Constance-Huggins, Monique

    2007-01-01

    While minority-business enterprises (MBEs) have gained some access to local government contracts during the last three decades, these firms continue to receive a small share of local government contract spending relative to the number of available firms. Researchers have suggested two general explanations for the low representation of MBEs in contract awards: (1) lack of qualifications and capacity among MBEs, and (2) public and private discrimination against MBEs in contracting processes. This study on prime contract opportunities in a Northern central city and county with a large minority population finds that low bid rates greatly contribute to the low MBE shares of prime contracts and that bidding is reduced by both local government processes and characteristics of the firms. Some implications of these findings are that local governments need to: (1) monitor MBE shares of prime contract bids by size of contract and use share of bids as one measure of program and organizational effectiveness; (2) identify MBEs that are qualified for prime contracts and encourage and help interested firms to submit competitive bids; and (3) ensure that local government policies and practices do not diminish access to information about prime contract opportunities for qualified and interested minority firms. Another implication is that bidders lists should not be a primary basis for determining MBE availability, since many qualified and interested MBEs do not bid because of perceived barriers in local government.

  14. Adaptive sparse grid expansions of the vibrational Hamiltonian

    SciTech Connect

    Strobusch, D.; Scheurer, Ch.

    2014-02-21

    The vibrational Hamiltonian involves two high dimensional operators, the kinetic energy operator (KEO), and the potential energy surface (PES). Both must be approximated for systems involving more than a few atoms. Adaptive approximation schemes are not only superior to truncated Taylor or many-body expansions (MBE), they also allow for error estimates, and thus operators of predefined precision. To this end, modified sparse grids (SG) are developed that can be combined with adaptive MBEs. This MBE/SG hybrid approach yields a unified, fully adaptive representation of the KEO and the PES. Refinement criteria, based on the vibrational self-consistent field (VSCF) and vibrational configuration interaction (VCI) methods, are presented. The combination of the adaptive MBE/SG approach and the VSCF plus VCI methods yields a black box like procedure to compute accurate vibrational spectra. This is demonstrated on a test set of molecules, comprising water, formaldehyde, methanimine, and ethylene. The test set is first employed to prove convergence for semi-empirical PM3-PESs and subsequently to compute accurate vibrational spectra from CCSD(T)-PESs that agree well with experimental values.

  15. Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

    NASA Technical Reports Server (NTRS)

    Leopold, Daniel J.

    2002-01-01

    The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

  16. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  17. Comparison of magnesium alloys and poly-l-lactide screws as degradable implants in a canine fracture model.

    PubMed

    Marukawa, Eriko; Tamai, Masato; Takahashi, Yukinobu; Hatakeyama, Ichiro; Sato, Masaru; Higuchi, Yusuke; Kakidachi, Hiroshi; Taniguchi, Hirofumi; Sakamoto, Takamitsu; Honda, Jun; Omura, Ken; Harada, Hiroyuki

    2016-10-01

    The aims of this study were to evaluate in vivo the biological responses to implants composed of biodegradable anodized WE43 (containing magnesium yttrium, rare earth elements and zirconium; Elektron SynerMag®) magnesium alloy, monolithic WE43 magnesium alloy and poly-l-lactic acid (PLLA), which are commonly used materials in clinic settings, and to evaluate the effectiveness of the materials as bone screws. The effectiveness of the magnesium alloy implants in osteosynthesis was evaluated using a bone fracture model involving the tibia of beagle dogs. For the monolithic WE43 implants, radiological, and histological evaluation revealed that bone trabeculae around the implanted monolithic WE43 decreased because of an inflammatory response. However, there was no damage due to hydrogen gas or inflammatory response in the bone tissue around the anodized WE43 implants. After 4 weeks, all the PLLA implants (n = 3) had broken but the WE43 implants had not (n = 6). These results suggest that the WE43 implants had sufficient strength to fix bone fractures at load-bearing sites in orthopedic and oral maxillofacial surgery. Therefore, these biodegradable magnesium alloys are good candidates for replacing biodegradable polymers. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1282-1289, 2016.

  18. The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

    DOE PAGES

    Yang, Meiyin; Allard, Lawrence F.; Ji, Nian; ...

    2013-12-12

    Small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron®717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt.% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt.% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external) scattering, but withmore » no preferential size features. The films formed in 5 wt.% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Here, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.« less

  19. Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

    NASA Astrophysics Data System (ADS)

    Piquette, Eric Charles

    The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and

  20. Gallium ARSENIDE/ALUMINUM(X)-GALLIUM(1-X)ARSENIDE Quantum Well Lasers Grown on Gallium Arsenide and Silicon by Molecular Beam Epitaxy.

    NASA Astrophysics Data System (ADS)

    Chen, Howard Zehua

    1990-01-01

    The thesis begins with an introduction, in Chapter 1, to activities in molecular beam epitaxy (MBE) and related crystal growth methods as well as their applications in the field of optical interconnects using low-threshold lasers and high-speed photodetectors. In Chapter 2, a Green's function of interface matching problems is presented. A very simple equation can be derived, which can provide some support to a very controversial, yet highly successful and very popular quantum dipole model for Schottky barriers and heterojunctions by J. Tersoff. A simplified model can be obtained, which eliminates the uncertainties in Tersoff's scheme and predicts very well the band offsets for several important semiconductor heterosystems including GaAs/AlAs. Chapter 3 deals with details of MBE growth of GaAs/AlGaAs quantum well laser material on GaAs substrates. Various growth techniques and substrate orientations are discussed. The dependence of threshold current density of a GaAs/AlGaAs GRINSCH laser on quantum well thickness is experimentally studied. The experimental results are in good agreement with a qualitative analysis. A theoretical discussion of the effect of quantum well thickness on the threshold current density is used to explain the experimental results. Furthermore, this study has achieved for the first time, threshold current densities below 100 A/cm^2 in any semiconductor laser. Chapter 4 presents some important issues in GaAs -on-Si research. Both the potentialities and limitations of GaAs-on-Si technology are discussed. The main advantage of GaAs-on-Si technology is the special features of Si substrates not available in GaAs substrates. Chapter 5 discusses the experimental aspects of GaAs-on-Si laser growth by MBE. The formation and prevention of antiphase domains (APDs) are discussed. Various methods to reduce defect density are presented. Appendix I summarizes the operation and maintenance of a Riber 2300 MBE system from a practical point of view. Only

  1. Estimation of global solar radiation using an artificial neural network based on an interpolation technique in southeast China

    NASA Astrophysics Data System (ADS)

    Zou, Ling; Wang, Lunche; Lin, Aiwen; Zhu, Hongji; Peng, Yuling; Zhao, Zhenzhen

    2016-08-01

    Solar radiation plays important roles in energy application, vegetation growth and climate change. Empirical relations and machine-learning methods have been widely used to estimate global solar radiation (GSR) in recent years. An artificial neural network (ANN) based on spatial interpolation is developed to estimate GSR in southeast China. The improved Bristow-Campbell (IBC) model and the improved Ångström-Prescott (IA-P) model are compared with the ANN model to explore the best model in solar radiation modeling. Daily meteorological parameters, such as sunshine duration hours, mean temperature, maximum temperature, minimum temperature, relative humidity, precipitation, air pressure, water vapor pressure, and wind speed, along with station-measured GSR and a daily surface GSR dataset over China obtained from the Data Assimilation and Modeling Center for Tibetan Multi-spheres (DAM), are used to predict GSR and to validate the models in this work. The ANN model with the network of 9-17-1 provides better accuracy than the two improved empirical models in GSR estimation. The root-mean-square error (RMSE), mean bias error (MBE), and determination coefficient (R2) are 2.65 MJ m-2, -0.94 MJ m-2, and 0.68 in the IA-P model; 2.19 MJ m-2, 1.11 MJ m-2, and 0.83 in the IBC model; 1.34 MJ m-2, -0.11 MJ m-2, and 0.91 in the ANN model, respectively. The regional monthly mean GSR in the measured dataset, DAM dataset, and ANN model is analyzed. The RMSE (RMSE %) is 1.07 MJ m-2 (8.91%) and the MBE (MBE %) is -0.62 MJ m-2 (-5.21%) between the measured and ANN-estimated GSR. The statistical errors of RMSE (RMSE %) are 0.91 MJ m-2 (7.28%) and those of MBE (MBE %) are -0.15 MJ m-2 (-1.20%) between DAM and ANN-modeled GSR. The correlation coefficients and R2 are larger than 0.95. The regional mean GSR is 12.58 MJ m-2. The lowest GSR is observed in the northwest area, and it increases from northwest to southeast. The annual mean GSR decreases by 0.02 MJ m-2 decade-1 over the entire

  2. Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics

    NASA Astrophysics Data System (ADS)

    Carter, Andrew Daniel

    III-V-based MOSFETs have the potential to exceed the performance of silicon-based MOSFETs due to the semiconductor's small electron effective mass. Modern silicon-based MOSFETs with 22 nm gate lengths utilize high-k gate insulators and non-planar device geometries to optimize device performance. III-V HEMT technology has achieved similar gate lengths, but large source-drain access resistances and the lack of high-quality gate insulators prevent further device performance scaling. Sub-22 nm gate length III-V MOSFETs require metal-semiconductor contact resistivity to be less than 1 ohm-micron squared, gate insulators with less than 1 nm effective oxide thickness, and semiconductor-insulator interface trap densities less than 2E12 per square centimeter per electron volt. This dissertation presents InGaAs-based III-V MOSFET process flows and device results to assess their use in VLSI circuits. Previous III-V MOSFET results focused on long (>100 nm) gate lengths and ion implantation for source-drain region formation. Scaling III-V MOSFETs to shorter gate lengths requires source-drain regions that have low sheet resistance, high mobile charge densities, and low metal-semiconductor contact resistance. MBE- and MOCVD-based raised epitaxial source-drain regrowth meet these requirements. MBE InAs source-drain regrowth samples have shown 0.5 to 2 ohm-micron squared metal semiconductor contact resistivities. MOCVD InGaAs source-drain regrowth samples have shown < 100 ohm-micron single-sided access resistance to InGaAs MOSFETs. Gate insulators on III-V materials require large conduction band offsets to the channel, high dielectric permittivities, and low semiconductor-insulator interface trap densities. An in-situ hydrogen plasma / trimethylaluminum treatment has been developed to lower the gate semiconductor-insulator interface trap density. This treatment, done immediately before gate insulator deposition, has been shown to lower MOS capacitor interface trap densities by more

  3. Effect of the Graded-Gap Layer Composition on the Formation of n + -n - -p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1- x Te Layers

    NASA Astrophysics Data System (ADS)

    Talipov, N. Kh.; Voitsekhovskii, А. V.; Grigor'ev, D. V.

    2014-07-01

    Processes of formation of n + -n--p-structures in boron-implanted heteroepitaxial (HEL) CdxHg1-xTe (CMT) layers of p-type grown by molecular beam epitaxy (HEL CMT MBE) with different compositions of the upper graded-gap layer are studied. It is shown that the surface composition (xs) of HEL CMT MBE significantly affects both the electrical parameters of the implanted layer and the spatial distribution of radiation defects of donor type. For HEL CMT MBE with the small surface composition xs = 0.22-0.33, it is found that the layer electron concentration (Ns) is decreased after saturation with accumulation of radiation defects, as the dose of B+ ions is increased in the range of D = 1ṡ1011-3ṡ1015 сm-2. An increase of the surface composition up to xs = 0.49-0.56 results in a significant decrease in Ns and a disappearance of the saturation of concentration in the whole dose range. The value of Ns monotonically increases with the energy (E) of boron ions and composition xs. It is found that for B+-ion energies E = 20-100 keV, the depth of the surface n + -layer increases with increasing energy and exceeds the total projected path of boron ions. However, in the energy range E = 100-150 keV, the depth of n+-layer stops increasing with the increase of the surface composition. The depth (dn) of a lightly doped n--layer monotonically decreases with increasing energy of boron ions in the entire range of E = 20-150 keV. With increasing dose (D) of B+ ions in the interval D = 1ṡ1014-1ṡ1015сm-2, deep n--layers with dn = 4-5 μm are formed only in the HEL CMT MBE with xs = 0.22-0.33. For the samples with xs = 0.49-0.56, the depth changes in the interval dn = 1.5-2.5 μm. At D ≤ 3ṡ1013сm-2, n + -n--p-structure is not formed for all surface compositions, if implantation is performed at room temperature. However, implantation at T = 130°C leads to the formation of a deep n--layer. Planar photodiodes with the n-p-junction area of A = 35×35 μm2 made on the basis of

  4. Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zandian, Majid

    Doped layer semiconductor structures provide possibilities for novel electronic devices. Growth of Hg1-xCdxTe by molecular beam epitaxy (MBE) allows precise control over the doping profile and position of heterojunctions as well as structural properties of this ternary alloy. Even though n-type doping using indium is well established, little is known about p-type doping in this material system by MBE. Several elements such as Ag, Au, Sb, Bi and P have been previously used, however high diffusion coefficient and amphoteric behavior of these atoms in HgCdTe has restricted their use in heterojunction devices where control over doping profiles and concentrations is needed. We investigated arsenic incorporation efficiency as a function of As 4 flux and growth temperature. The sticking coefficient of As is substantially higher at lower growth temperature compared to growth at 190°C. For samples grown at 170°C, the etch pit density (EPD) is higher compared to p-type As doped samples grown at 190°C. Higher EPD is associated with columnar twin defects observed in transmission electron microscopy (TEM) studies of low growth temperature samples. Growth at low temperature of 170°C causes Hg rich condition promoting twin formation. Therefore, growth of p-type layers doped with As at low temperatures require optimization of II/VI flux ratio to eliminate columnar twin defects. It is possible to incorporate As at normal MBE growth temperature of 190°C but very high flux of As has to used to overcome low sticking coefficient of As at these temperatures. We proposed a mechanism for the activation of As involving Hg vacancies (VHg··) where Te is moved to a Hg vacancy, leaving behind a Te vacancy, which is then filled by an As atom. The Te that is now on a Hg site (i.e., Te antisite) migrates to the surface and leaves the crystal.

  5. Magnetic and structural properties of BiFeO3 thin films grown epitaxially on SrTiO3/Si substrates

    NASA Astrophysics Data System (ADS)

    Laughlin, Ryan P.; Currie, Daniel A.; Contreras-Guererro, Rocio; Dedigama, Aruna; Priyantha, Weerasinghe; Droopad, Ravindranath; Theodoropoulou, Nikoleta; Gao, Peng; Pan, Xiaoqing

    2013-05-01

    The integration of oxides with semiconductors is important for the technological advancement of the next generation electronics. Concomitant ferroelectric and antiferromagnetic (AF) behavior is demonstrated in single crystal BiFeO3 (BFO) films grown on 20 nm SrTiO3 (STO) virtual substrates on Si(100) using molecular beam epitaxy (MBE). STO thin films are grown in an oxide MBE chamber by co-deposition of Sr, Ti, and molecular O2. Careful control of the O2 during nucleation produced commensurate growth of STO on Si. The sequence of the steps allows for the suppression of an amorphous SiO2 layer. This STO(20 nm)/Si structure was used as a virtual substrate for MBE deposition of BFO on Si without breaking vacuum. BFO was deposited using Fe and O2 plasma with an overpressure of Bi flux, the growth rate was controlled by the incoming Fe flux. The reflection high energy electron diffraction image shows a 2-D growth front with a 6-fold surface reconstruction under optimized O2 pressure of 5 × 10-8 mbar. Cross-sectional transmission electron microscopy (TEM) confirms the high crystallinity of the films and shows sharp, atomically flat interfaces. The selected area diffraction pattern (SADP) reveals that BFO grows in a distorted rhombohedral crystal structure. X-ray diffraction does not show formation of second phases and is consistent with the TEM and SADP results. The BFO films show AF behavior with a Neel temperature that exceeds 350 K, as expected (TN = 673 K) and with a residual ferromagnetic behavior that decreases with film thickness and is consistent with the G-type AF due to the canted spins. The saturation magnetization per unit volume for a 40 nm thick film was 180 emu/cm3 at an in-plane magnetic field of 8 kOe. The ferroelectric behavior of the films was verified using piezoresponse force microscopy.

  6. Ka-Band GaAs FET Monolithic Power Amplifier Development

    NASA Technical Reports Server (NTRS)

    Saunier, Paul; Tserng, Hua Quen

    1997-01-01

    Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

  7. Artifacts for Calibration of Submicron Width Measurements

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank; Grunthaner, Paula; Bryson, Charles, III

    2003-01-01

    Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by

  8. Core-shell tin oxide, indium oxide, and indium tin oxide nanoparticles on silicon with tunable dispersion: electrochemical and structural characteristics as a hybrid Li-ion battery anode.

    PubMed

    Osiak, Michal J; Armstrong, Eileen; Kennedy, Tadhg; Torres, Clivia M Sotomayor; Ryan, Kevin M; O'Dwyer, Colm

    2013-08-28

    Tin oxide (SnO2) is considered a very promising material as a high capacity Li-ion battery anode. Its adoption depends on a solid understanding of factors that affect electrochemical behavior and performance such as size and composition. We demonstrate here, that defined dispersions and structures can improve our understanding of Li-ion battery anode material architecture on alloying and co-intercalation processes of Lithium with Sn from SnO2 on Si. Two different types of well-defined hierarchical Sn@SnO2 core-shell nanoparticle (NP) dispersions were prepared by molecular beam epitaxy (MBE) on silicon, composed of either amorphous or polycrystalline SnO2 shells. In2O3 and Sn doped In2O3 (ITO) NP dispersions are also demonstrated from MBE NP growth. Lithium alloying with the reduced form of the NPs and co-insertion into the silicon substrate showed reversible charge storage. Through correlation of electrochemical and structural characteristics of the anodes, we detail the link between the composition, areal and volumetric densities, and the effect of electrochemical alloying of Lithium with Sn@SnO2 and related NPs on their structure and, importantly, their dispersion on the electrode. The dispersion also dictates the degree of co-insertion into the Si current collector, which can act as a buffer. The compositional and structural engineering of SnO2 and related materials using highly defined MBE growth as model system allows a detailed examination of the influence of material dispersion or nanoarchitecture on the electrochemical performance of active electrodes and materials.

  9. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang

    2015-07-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III-V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III-V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III-V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III-V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components.

  10. Misconduct, Marginality and Editorial Practices in Management, Business and Economics Journals

    PubMed Central

    2016-01-01

    Objectives The paper presents data on the two problems of misconduct and marginality in management, business and economics (MBE) journals and their practices to combat these problems. Design Data was collected in three phases. First, all publicly retracted papers in MBE journals were identified through keywords searches in 7 major databases (n = 1329 journals). Second, a focused survey was distributed to editors involved in such retractions (n = 64; response rate = 28%). Finally, a survey was administered to all active journals in the seven databases to collect data on editors’ perceptions and practices related to the two problems (n = 937, response rate = 31.8%). Frequency analyses, cross tabulations, and qualitative analyses of open answers were used to examine the data. Results 184 retracted papers in MBE journals were identified in 2005–2015 (no retraction was found before 2005). From 2005–2007 to 2012–2015, the number of retractions increased by a factor ten with an all-time high in 2015. The survey to journals with reported retractions illustrates how already a few cases of suspected misconduct put a strain on the editorial workload. The survey to all active journals revealed that 42% of the respondents had started to use software to screen all submitted papers, and that a majority recognized the problem of marginality, as indicated by salami-style submissions. According to some editors, reviewers easily spot such submissions whereas others argued that authors may submit thinly sliced papers in parallel to several journals, which means that this practice is only discovered post-publication. The survey question on ways to support creative contributions stimulated a rich response of ideas regarding editorial vision, engaged boards and developmental approaches. The study uses data from three specialized fields, but its findings may be highly relevant to many journals in the social sciences. PMID:27454761

  11. Predictors of malignant brain edema in middle cerebral artery infarction observed on CT angiography.

    PubMed

    Kim, Hoon; Jin, Seon Tak; Kim, Young Woo; Kim, Seong Rim; Park, Ik Seong; Jo, Kwang Wook

    2015-03-01

    Patients with middle cerebral artery (MCA) infarction accompanied by MCA occlusion with or without internal carotid artery (ICA) occlusion have a poor prognosis, as a result of brain cell damage caused by both the infarction and by space-occupying and life-threatening edema formation. Multiple treatments can reduce the likelihood of edema formation, but tend to show limited efficacy. Decompressive hemicraniectomy with duroplasty has been promising for improving functional outcomes and reducing mortality, particularly improved functional outcomes can be achieved with early decompressive surgery. Therefore, identifying patients at risk for developing fatal edema is important and should be performed as early as possible. Sixty-four patients diagnosed with major MCA infarction with MCA occlusion within 8 hours of symptom onset were retrospectively reviewed. Early clinical, laboratory, and computed tomography angiography (CTA) parameters were analyzed for malignant brain edema (MBE). Twenty of the 64 patients (31%) had MBE, and the clinical outcome was poor (3month modified Rankin Scale >2) in 95% of them. The National Institutes of Health Stroke Scale (NIHSS) score, Alberta Stroke Program Early Computed Tomography Score, Clot Burden Score, and Collateral Score (CS) showed statically significant differences in both groups. Multivariable analyses adjusted for age and sex identified the independent predictors of MBE: NIHSS score >18 (odds ratio [OR]: 4.4, 95% confidence interval [CI]: 1.2-16.0, p=0.023) and CS on CTA <2 (OR: 7.28, 95% CI: 1.7-30.3,p=0.006). Our results provide useful information for selecting patients in need of aggressive treatment such as decompressive surgery.

  12. Anisotropic transport in modulation doped quantum well structures

    NASA Technical Reports Server (NTRS)

    Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F.

    1987-01-01

    The degree of anisotropy in the anisotropic electron transport that has been observed in GaAs modulation-doped quantum wells grown by MBE on Al(0.3)Ga(0.7)As is related to the thickness and growth parameters of this substrate, which is grown just prior to the inverted interface. It is presently observed that the inverted interface has an anisotropic roughness which affects the 77 K low field electron transport parallel to the interface, and gives rise to anisotropic electron scattering in the GaAs modulation-doped quantum well.

  13. Epitaxy of layered semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  14. Novel Asymmetric III-V/II-VI Hybrid Heterostructures for High-Power Mid-Infrared Laser

    DTIC Science & Technology

    2007-11-02

    asymmetric barriers for electrons and holes at the interfaces between a narrow-gap quantum well (QW) active layer and wide-gap cladding layers, which can...CdMgSe layers on InAs. In-situ study of growth initiation stage by reflection high energy electron diffraction (RHEED). 1.3. The MBE growth condition...height of the energy barriers U1 and U2, that is equal to (ECR-ECN) for electrons and (EVN- EVP) for holes respectively, are chosen to exceed 3-5 kT at

  15. Effects of crystal phase mixing on the electrical properties of InAs nanowires.

    PubMed

    Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dey, Anil W; Dick, Kimberly A

    2011-06-08

    We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.

  16. Analysis of Etched CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  17. ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Nee, Tzer-En

    Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.

  18. Gallium Arsenide and Related Compounds, 1986.

    DTIC Science & Technology

    1986-01-01

    application of MBE to microwave devices, such as FETs, Mixer and IMPATT diodes, and the fabrication of optical devices, such as the laser, LED and...undoped, In-alloyed and whole ingot annealed semi- insulating GaAs substrates for low noise microwave amplifiers H Kanber and D C Wang 509- 514 Evaluation...is negligibly small at low temperatures of 400-500°C. d) No edge growth in selective epitaxy Selective epitaxy, growth through the window of a SiO 2

  19. Multifunctional L1(0) -Mn(1.5)Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.

    PubMed

    Zhu, Lijun; Nie, Shuaihua; Meng, Kangkang; Pan, Dong; Zhao, Jianhua; Zheng, Houzhi

    2012-08-28

    A new kind of multifunctional L1(0) -Mn(1.5)Ga film is demonstrated for the first time. These MBE-grown epitaxial films exhibit pronounced magnetic properties at room temperature, including ultrahigh perpendicular coercivity up to 42.8 kOe, giant perpendicular magnetic anisotropy with a maximum of 21.7 Merg/cm(3) and large magnetic energy products up to 2.60 MGOe, which allow various applications in ultrahigh density recording, spintronics, and permanent magnets.

  20. Gallium arsenide (GaAs) (001) after sublimation of arsenic (As) thin-film cap, by XPS

    SciTech Connect

    Engelhard, Mark H.; Lyubinetsky, Andre; Baer, Don R.

    2016-12-01

    Survey and high energy resolution spectra are reported for MBE grown GaAs (001) that had been capped with As. The As cap was removed by heating in situ prior to analysis. The current data expands upon the spectral regions previously reported in Surface Science Spectra. High energy resolution spectral features reported include: 2p, 3s, 3p, 3d, and L3M45M45 peaks for As; 2p, 3s, 3p, 3d, and L3M45M45 peaks for Ga; and the valance band region.

  1. Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

    NASA Astrophysics Data System (ADS)

    Lyapunov, D. V.; Pishchagin, A. A.; Grigoryev, D. V.; Korotaev, A. G.; Voitsekhovskii, A. V.; Kokhanenko, A. P.; Iznin, I. I.; Savytskyy, H. V.; Bonchik, A. U.; Dvoretskii, S. A.; Mikhailov, N. N.

    2016-08-01

    In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films.

  2. Picosecond Nonlinear Resonant Interactions in Semiconductors.

    DTIC Science & Technology

    1986-03-15

    presently known about the basic properties of Pbl1xEuxTe for higher Eu-concentrations, limited to an early study on evaporated thin films (5). Among the...on several thin film samples over a concentration range up to x=0.30, which have allowed us to speculate about the nature of the electronic states...We also briefly note observations on samples of higher Eu-concentration. The samples used in these studies were MBE-grown single crystal thin films of

  3. Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

    DTIC Science & Technology

    2012-08-01

    Solar   Cells :     Epitaxial  Li>-­‐Off   GaAs   Solar   Cells   and  Enabling...Flexible, High-efficiency Solar Cells : Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c...n+- GaAs contact, 0.2 µm n-InGaAlP window, 25 nm p-InGaP BSF, 75 nm n- GaAs emitter, 0.15 µm MBE  Growth  of  Epi-­‐layers Solar

  4. Molecular-beam epitaxy of CrSi2 on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Grunthaner, P. J.; Lin, T. L.; Chang, K. T.; Mazur, J. H.

    1988-01-01

    The growth of CrSi2 on Si(111) in a commercial MBE system with a base pressure in the low 10 to the -11th torr range is reported. CrSi2 layers grown on Si(111) exhibit a strong tendency to form islands. Two particular epitaxial relationships are identified. Thick (210 nm) layers have been grown by four different techniques, with best results obtained by codepositing Cr and Si at elevated temperature. The grain size is observed to increase with substrate temperature, reaching 1-2 microns in a layer deposited at 825 C.

  5. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  6. Surface-dominated conduction in a 6nm-thick Bi2Se3 thin

    NASA Astrophysics Data System (ADS)

    He, Liang; Yu, Xinxin; Kou, Xufeng; Lang, Murong; Wang, Kang L.; Xiu, Faxian; Teague, Marcus; Yeh, Nai-Chang

    2012-02-01

    We report a direct observation of surface dominated conduction in an intrinsic Bi2Se3 thin film with a thickness of 6 quintuple layers (QLs) grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy (MBE). Shubnikov-de Haas (SdH) oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 +/-5 meV above the Dirac point, in agreement with 70 +/- 20 meV obtained from scanning tunneling spectroscopies (STS). Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states.

  7. Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Kim, Jae-Hoon; Liu, John K.; Radhakrishnan, Gouri; Katz, Joseph; Sakai, Shiro

    1988-01-01

    Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

  8. Epitaxial growth of Bi{sub 2}Se{sub 3} topological insulator thin films on Si (111)

    SciTech Connect

    He Liang; Xiu Faxian; Huang Guan; Kou Xufeng; Lang Murong; Wang, Kang L.; Wang Yong; Fedorov, Alexei V.; Beyermann, Ward P.; Zou Jin

    2011-05-15

    In this paper, we report the epitaxial growth of Bi{sub 2}Se{sub 3} thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with the temperature- and thickness-dependent magneto-transport measurements, suggest the presence of a shallow impurity band. Below a critical temperature of {approx}100K, the surface states of a 7 nm thick film contribute up to 50% of the total conduction.

  9. High kappa Dielectrics on InGaAs and GaN: Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

    DTIC Science & Technology

    2010-12-24

    MOSFETs and GaN MOSFETs without employing interfacial layers and surface chemical pre-treatments. We have achieved many firsts and made great impacts...hold world record high dc performances of InGaAs MOSFETs , including the drain current, peak transconductance, and peak electron mobility in the self...aligned inversion-channel In0.75Ga0.25As and In0.2Ga0.8As MOSFETs using both in-situ MBE-Al2O3/GGO and ex-situ ALD-Al2O3 gate dielectrics. The high

  10. The Effect of Low-Energy High-Flux Ion Bombardment on the Nucleation and Growth of INDIUM(X)GALLIUM(1-X)ARSENIDE/GALLIUM Arsenide.

    NASA Astrophysics Data System (ADS)

    Millunchick, Joanna Mirecki

    The growth of In_{rm x}Ga_{rm1-x} As/GaAs using Ion-Assisted Molecular Beam Epitaxy (IAMBE) was investigated to determine the effect of low energy (E < 100eV) high flux (0.1 < J < 0.75 mA/cm^2 ) ion irradiation on nucleation and strain relaxation as compared to conventional molecular beam epitaxy (MBE). Experiments were carried out to investigate the modification of nucleation as a result of E < 30 eV ion bombardment. It was found that the island densities of the IAMBE films fell into two temperature regimes. At low temperatures, nucleation parameters were altered by ion-induced island dissociation, whereas at high temperatures, ion-enhanced diffusion dominated. The effect of ion bombardment on the growth of highly strained thin films was examined. It was found that the rate of strain relaxation and the surface roughness decreased for 16 < E < 27 eV. Also, the IAMBE films were smoother than their MBE counterparts. Based on these results, it was inferred that surface roughening of large-mismatch MBE InGaAs films allows strain relaxation well before misfit dislocations are introduced. A Monte Carlo simulation was developed to model the growth of strained layers with and without ion bombardment. This simulation showed that the nucleation mechanism strongly depends on the adatom interaction with the second nearest neighbor E_{rm2nn}. Also, in the presence of ion bombardment, the simulated RHEED oscillation intensities improved for increasing ion energy and ion to atom ratio, in agreement with experimental results. Defect generation as a consequence of ion bombardment was also studied to ascertain whether IAMBE can be utilized in this regime without damage. IAMBE of In_ {rm x}Ga_{rm1 -x}As/GaAs showed improved crystalline quality compared to MBE-grown films, however, a significant amount of ion-injected point defects were found to be present. These point defects degraded optical properties, but no discernible effect was observed on electronic properties. Cross

  11. Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing

    DTIC Science & Technology

    2016-06-07

    REPORT Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Current growth methods of HgCdTe/Cd(Se...Z39.18 - Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing Report Title ABSTRACT Current growth methods of HgCdTe/Cd(Se)Te/Si by molecular... growth methods of HgCdTe/Cd(Se)Te/Si by molecular-beam epitaxy (MBE) result in a dislocation density of mid 106 cm2 to low 107 cm2. Although the exact

  12. Development of the III-V Barrier PhotoDetector Heterostructures for Spectral Range Above 10 microns

    DTIC Science & Technology

    2016-02-14

    SECURITY CLASSIFICATION OF: Novel approach to growth of quality narrow gap InAsSb-based materials using metamorphic buffers on GaSb substrates was...pursued. The developed GaInSb and AlInSb graded buffers served as a platform for growth of strain-free low-dislocation-density bulk InAsSb layers. The...P.O. Box 12211 Research Triangle Park, NC 27709-2211 Metamorphic growth , MBE, LWIR, InAsSb, carrier lifetime, barrier photodetectors REPORT

  13. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    SciTech Connect

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  14. A Computer-Based System for Studies in Learning

    DTIC Science & Technology

    1974-09-01

    A D/A-000 102 A COMPUTER-BASED SYSTEM FOR STUDIES IN LEARNING Donald K. Centner, el al C a 1 i f o r n i a U n i v e nit v...DvlCUMENTATION PAGE I HEAD INSTRUCTIONS 1 1 Rf P;B’r S ^MBE R Tj GOVT ACCESSION NO 4 Ti T .. E ami f.itnlli- A Computer-Based System for...uuibisEinns D ams Th e views and conclusions contained in this document are those of the authors and should not be interpreted as necessarily

  15. Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films

    NASA Astrophysics Data System (ADS)

    Tatsumi, Toru; Aizaki, Naoaki; Tsuya, Hideki

    1985-04-01

    Defect density dependence on various surface cleaning conditions for molecular beam epitaxial (MBE) silicon films was investigated. Defect-free films were obtained on (100) and (511) wafers, using a combination of ozone cleaning and predeposition process after the usual wet cleaning. On the (111) wafer, the defect density dependence on growth rate was examined. The two-step growth-rate procedure was effective in decreasing stacking faults on the (111) wafer. The difference in defect density between (100) and (111) wafers is also discussed.

  16. In situ cleaning of Si surfaces by UV/ozone

    NASA Astrophysics Data System (ADS)

    Lippert, G.; Osten, H. J.

    1993-02-01

    We describe an attempt to perform the UV/ozone cleaning step for silicon wafers within the ultrahigh vacuum system. By introducing the UV/ozone cleaning into the load lock of the MBE equipment we avoid the contact of the normally ex situ UV/ozone precleaned substrate to air. In addition we gain a further degree of freedom, namely the oxygen partial pressure. The influence of that pressure on removing carbon-containing contaminations and on the properties of the in situ formed thin oxide layer is investigated by X-ray photoelectron spectroscopy (XPS) without breaking the vacuum.

  17. Stable Integrated Microwave to Optical Modulator

    DTIC Science & Technology

    1991-06-01

    SOA p#-G Aj cd~V ,rc f-,Yr’ 16 p- Ald.7 6r 4. As~ ceAd e.. - 2cWvA Figure 1. Proposed MBE Layers for Both MESFET and Laser ... Fabrication . 4348/Jea w W ~0 U: J -j 0 Il W Igo-,- WU)W co V)H 0 3 o cm ZH 019 rz4 ta W A is mfz0 zLI- g CM Zlu a + J 0(L.- ) U) C) , - - . 0ZW0Z ZCA

  18. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    SciTech Connect

    Nemcsics, A.

    2005-11-15

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

  19. Oxide Films for RF Applications

    DTIC Science & Technology

    2008-07-01

    structured thin film superlattices of (AEO)m( TiO2 )n - type with varying m and n numbers in order to generate a homologous series of materials having...mechanisms in MBE oxide films The proposed goal was to identify, isolate, and reduce sources of loss in thin film dielectrics. It is important to note...that the loss in bulk single crystals is often orders of magnitude below that of their thin film counterparts. It is believed that defects in thin

  20. Tunneling and Transport in Mesoscopic Structures

    DTIC Science & Technology

    2007-11-02

    cuprate superconductors and manganite ferromagnets were grown by MBE. The suppression of critical currents and critical temperatures by spin injection...are believed to be a consequence of the high degree of spin polarization in half-metallic manganite films, and may be the basis for a new...co-funded by the NSF) 7 2.2.1 Introduction 7 2.2.2 Accomplishments 8 2.2.2.1 Junctions with Inert Gas Barriers 8 2.2.2.2 Manganite /cuprate