Fabry-Pérot Interference in Gapped Bilayer Graphene with Broken Anti-Klein Tunneling

NASA Astrophysics Data System (ADS)

Varlet, Anastasia; Liu, Ming-Hao; Krueckl, Viktor; Bischoff, Dominik; Simonet, Pauline; Watanabe, Kenji; Taniguchi, Takashi; Richter, Klaus; Ensslin, Klaus; Ihn, Thomas

2014-09-01

We report the experimental observation of Fabry-Pérot interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene device. The high quality of the bilayer graphene flake, combined with the device's electrical robustness provided by the encapsulation between two hexagonal boron nitride layers, allows us to observe ballistic phase-coherent transport through a 1-μm-long cavity. We confirm the origin of the observed interference pattern by comparing to tight-binding calculations accounting for the gate-tunable band gap. The good agreement between experiment and theory, free of tuning parameters, further verifies that a gap opens in our device. The gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling). The broken anti-Klein tunneling implies that the Berry phase, which is found to vary with the gate voltages, is always involved in the Fabry-Pérot oscillations regardless of the magnetic field, in sharp contrast with single-layer graphene.

Finite element modeling simulation-assisted design of integrated microfluidic chips for heavy metal ion stripping analysis

NASA Astrophysics Data System (ADS)

Hong, Ying; Zou, Jianhua; Ge, Gang; Xiao, Wanyue; Gao, Ling; Shao, Jinjun; Dong, Xiaochen

2017-10-01

In this article, a transparent integrated microfluidic device composed of a 3D-printed thin-layer flow cell (3D-PTLFC) and an S-shaped screen-printed electrode (SPE) has been designed and fabricated for heavy metal ion stripping analysis. A finite element modeling (FEM) simulation is employed to optimize the shape of the electrode, the direction of the inlet pipeline, the thin-layer channel height and the sample flow rate to enhance the electron-enrichment efficiency for stripping analysis. The results demonstrate that the S-shaped SPE configuration matches the channel in 3D-PTLFC perfectly for the anodic stripping behavior of the heavy metal ions. Under optimized conditions, a wide linear range of 1-80 µg l-1 is achieved for Pb2+ detection with a limit of 0.3 µg l-1 for the microfluidic device. Thus, the obtained integrated microfluidic device proves to be a promising approach for heavy metal ions stripping analysis with low cost and high performance.

Error Control with Perfectly Matched Layer or Damping Layer Treatments for Computational Aeroacoustics with Jet Flows

NASA Technical Reports Server (NTRS)

Goodrich, John W.

2009-01-01

In this paper we show by means of numerical experiments that the error introduced in a numerical domain because of a Perfectly Matched Layer or Damping Layer boundary treatment can be controlled. These experimental demonstrations are for acoustic propagation with the Linearized Euler Equations with both uniform and steady jet flows. The propagating signal is driven by a time harmonic pressure source. Combinations of Perfectly Matched and Damping Layers are used with different damping profiles. These layer and profile combinations allow the relative error introduced by a layer to be kept as small as desired, in principle. Tradeoffs between error and cost are explored.

Photoaligning and photopatterning technology: applications in displays and photonics

NASA Astrophysics Data System (ADS)

Chigrinov, Vladimir

2016-03-01

The advantages of LC photoalignment technology in comparison with common "rubbing" alignment methods tend to the continuation of the research in this field. Almost all the criteria of perfect LC alignment are met in case of azo-dye layers. Nowadays azo-dye alignment materials can be already used in LCD manufacturing, e.g. for the alignment of monomers in LCP films for new generations of photonics and optics devices. Recently the new application of photoaligned technology for the tunable LC lenses with a variable focal distance was proposed. New optically rewritable (ORW) liquid crystal display and photonics devices with a light controllable structure may include LC E-paper screens, LC lenses with a variable focal distance etc. Fast ferroelectric liquid crystal devices (FLCD) are achieved through the application of nano-scale photo aligning (PA) layers in FLC cells. The novel photoaligned FLC devices may include field sequential color (FSC) FLC with a high resolution, high brightness, low power consumption and extended color gamut to be used for PCs, PDAs, switchable goggles, and new generation of switchable 2D/3D LCD TVs, as well as photonics elements.

Fourier analysis: from cloaking to imaging

NASA Astrophysics Data System (ADS)

Wu, Kedi; Cheng, Qiluan; Wang, Guo Ping

2016-04-01

Regarding invisibility cloaks as an optical imaging system, we present a Fourier approach to analytically unify both Pendry cloaks and complementary media-based invisibility cloaks into one kind of cloak. By synthesizing different transfer functions, we can construct different devices to realize a series of interesting functions such as hiding objects (events), creating illusions, and performing perfect imaging. In this article, we give a brief review on recent works of applying Fourier approach to analysis invisibility cloaks and optical imaging through scattering layers. We show that, to construct devices to conceal an object, no constructive materials with extreme properties are required, making most, if not all, of the above functions realizable by using naturally occurring materials. As instances, we experimentally verify a method of directionally hiding distant objects and create illusions by using all-dielectric materials, and further demonstrate a non-invasive method of imaging objects completely hidden by scattering layers.

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices.

PubMed

Kowalczyk, Philippe; Hippert, Françoise; Bernier, Nicolas; Mocuta, Cristian; Sabbione, Chiara; Batista-Pessoa, Walter; Noé, Pierre

2018-06-01

Van der Waals layered GeTe/Sb 2 Te 3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb 2 Te 3 SLs are made by periodically stacking ultrathin GeTe and Sb 2 Te 3 crystalline layers. The mechanism of the resistance change in iPCM devices is still highly debated. Recent experimental studies on SLs grown by molecular beam epitaxy or pulsed laser deposition indicate that the local structure does not correspond to any of the previously proposed structural models. Here, a new insight is given into the complex structure of prototypical GeTe/Sb 2 Te 3 SLs deposited by magnetron sputtering, which is the used industrial technique for SL growth in iPCM devices. X-ray diffraction analysis shows that the structural quality of the SL depends critically on its stoichiometry. Moreover, high-angle annular dark-field-scanning transmission electron microscopy analysis of the local atomic order in a perfectly stoichiometric SL reveals the absence of GeTe layers, and that Ge atoms intermix with Sb atoms in, for instance, Ge 2 Sb 2 Te 5 blocks. This result shows that an alternative structural model is required to explain the origin of the electrical contrast and the nature of the resistive switching mechanism observed in iPCM devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Buffer Layer Effects on Tandem InGaAs TPV Devices

NASA Technical Reports Server (NTRS)

Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

2004-01-01

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soleimanikahnoj, S.; Knezevic, I.

Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can generate pseudospin-polarized current. Also, we proposemore » edge- and layer-pseudospin valves that operate analogously to conventional spin valves. The performance of valves in each pseudospin scheme is benchmarked by the pseudomagnetoresistance (PMR) ratio. The edge-pseudospin valve shows a nearly perfect PMR, with remarkable robustness against device parameters and disorder. Furthermore, these results may initiate new developments in pseudospin electronics.« less

Homoepitaxial graphene tunnel barriers for spin transport

NASA Astrophysics Data System (ADS)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

NASA Astrophysics Data System (ADS)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Optimization of Perfect Absorbers with Multilayer Structures

NASA Astrophysics Data System (ADS)

Li Voti, Roberto

2018-02-01

We study wide-angle and broadband perfect absorbers with compact multilayer structures made of a sequence of ITO and TiN layers deposited onto a silver thick layer. An optimization procedure is introduced for searching the optimal thicknesses of the layers so as to design a perfect broadband absorber from 400 nm to 750 nm, for a wide range of angles of incidence from 0{°} to 50{°}, for both polarizations and with a low emissivity in the mid-infrared. We eventually compare the performances of several optimal structures that can be very promising for solar thermal energy harvesting and collectors.

Semiconductor activated terahertz metamaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Hou-Tong

Metamaterials have been developed as a new class of artificial effective media realizing many exotic phenomena and unique properties not normally found in nature. Metamaterials enable functionality through structure design, facilitating applications by addressing the severe material issues in the terahertz frequency range. Consequently, prototype functional terahertz devices have been demonstrated, including filters, antireflection coatings, perfect absorbers, polarization converters, and arbitrary wavefront shaping devices. Further integration of functional materials into metamaterial structures have enabled actively and dynamically switchable and frequency tunable terahertz metamaterials through the application of external stimuli. The enhanced light-matter interactions in active terahertz metamaterials may result inmore » unprecedented control and manipulation of terahertz radiation, forming the foundation of many terahertz applications. In this paper, we review the progress during the past few years in this rapidly growing research field. We particularly focus on the design principles and realization of functionalities using single-layer and few-layer terahertz planar metamaterials, and active terahertz metamaterials through the integration of semiconductors to achieve switchable and frequency-tunable response.« less

Semiconductor activated terahertz metamaterials

DOE PAGES

Chen, Hou-Tong

2014-08-01

Metamaterials have been developed as a new class of artificial effective media realizing many exotic phenomena and unique properties not normally found in nature. Metamaterials enable functionality through structure design, facilitating applications by addressing the severe material issues in the terahertz frequency range. Consequently, prototype functional terahertz devices have been demonstrated, including filters, antireflection coatings, perfect absorbers, polarization converters, and arbitrary wavefront shaping devices. Further integration of functional materials into metamaterial structures have enabled actively and dynamically switchable and frequency tunable terahertz metamaterials through the application of external stimuli. The enhanced light-matter interactions in active terahertz metamaterials may result inmore » unprecedented control and manipulation of terahertz radiation, forming the foundation of many terahertz applications. In this paper, we review the progress during the past few years in this rapidly growing research field. We particularly focus on the design principles and realization of functionalities using single-layer and few-layer terahertz planar metamaterials, and active terahertz metamaterials through the integration of semiconductors to achieve switchable and frequency-tunable response.« less

Scattering suppression from arbitrary objects in spatially dispersive layered metamaterials

NASA Astrophysics Data System (ADS)

Shalin, Alexander S.; Ginzburg, Pavel; Orlov, Alexey A.; Iorsh, Ivan; Belov, Pavel A.; Kivshar, Yuri S.; Zayats, Anatoly V.

2015-03-01

Concealing objects by making them invisible to an external electromagnetic probe is coined by the term "cloaking." Cloaking devices, having numerous potential applications, are still facing challenges in realization, especially in the visible spectral range. In particular, inherent losses and extreme parameters of metamaterials required for the cloak implementation are the limiting factors. Here, we numerically demonstrate nearly perfect suppression of scattering from arbitrary-shaped objects in spatially dispersive metamaterial acting as an alignment-free concealing cover. We consider a realization of a metamaterial as a metal-dielectric multilayer and demonstrate suppression of scattering from an arbitrary object in forward and backward directions with perfectly preserved wave fronts and less than 10% absolute intensity change, despite spatial dispersion effects present in the composite metamaterial. Beyond the usual scattering suppression applications, the proposed configuration may be used for a simple realization of scattering-free detectors and sensors.

Near unity ultraviolet absorption in graphene without patterning

NASA Astrophysics Data System (ADS)

Zhu, Jinfeng; Yan, Shuang; Feng, Naixing; Ye, Longfang; Ou, Jun-Yu; Liu, Qing Huo

2018-04-01

Enhancing the light-matter interaction of graphene is an important issue for related photonic devices and applications. In view of its potential ultraviolet applications, we aim to achieve extremely high ultraviolet absorption in graphene without any nanostructure or microstructure patterning. By manipulating the polarization and angle of incident light, the ultraviolet power can be sufficiently coupled to the optical dissipation of graphene based on single-channel coherent perfect absorption in an optimized multilayered thin film structure. The ultraviolet absorbance ratios of single and four atomic graphene layers are enhanced up to 71.4% and 92.2%, respectively. Our research provides a simple and efficient scheme to trap ultraviolet light for developing promising photonic and optoelectronic devices based on graphene and potentially other 2D materials.

Investigation of a broadband coherent perfect absorber in a multi-layer structure by using the transfer matrix method

NASA Astrophysics Data System (ADS)

Na, Jihoon; Noh, Heeso

2018-01-01

We investigated a multi-layer structure for a broadband coherent perfect absorber (CPA). The transfer matrix method (TMM) is useful for analyzing the optical properties of structures and optimizing multi-layer structures. The broadband CPA strongly depends on the phase of the light traveling in one direction and the light reflected within the structure. The TMM simulation shows that the absorption bandwidth is increased by 95% in a multi-layer CPA compared to that in a single-layer CPA.

Theoretical realization of robust broadband transparency in ultrathin seamless nanostructures by dual blackbodies for near infrared light

NASA Astrophysics Data System (ADS)

Zhang, Lei; Hao, Jiaming; Ye, Huapeng; Yeo, Swee Ping; Qiu, Min; Zouhdi, Said; Qiu, Cheng-Wei

2013-03-01

We propose a counter-intuitive mechanism of constructing an ultrathin broadband transparent device with two perfect blackbodies. By introducing hybridization of plasmon modes, resonant modes with different symmetries coexist in this system. A broadband transmission spectrum in the near infrared regime is achieved through controlling their coupling strengths, which is governed by the thickness of high refractive index layer. Meanwhile, the transparency bandwidth is found to be tunable in a large range by varying the geometric dimension. More significantly, from the point view of applications, the proposed method of achieving broadband transparency can perfectly tolerate the misalignment and asymmetry of periodic nanoparticles on the top and bottom, which is empowered by the unique dual of coupling-in and coupling-out processes within the pair of blackbodies. Moreover, roughness has little influence on its transmission performance. According to the coupled mode theory, the distinguished transmittance performance is physically interpreted by the radiative decay rate of the entire system. In addition to the feature of uniquely robust broadband transparency, such a ultrathin seamless nanostructure (in the presence of a uniform silver layer) also provides polarization-independent and angle-independent operations. Therefore, it may power up a wide spectrum of exciting applications in thin film protection, touch screen techniques, absorber-emitter transformation, etc.We propose a counter-intuitive mechanism of constructing an ultrathin broadband transparent device with two perfect blackbodies. By introducing hybridization of plasmon modes, resonant modes with different symmetries coexist in this system. A broadband transmission spectrum in the near infrared regime is achieved through controlling their coupling strengths, which is governed by the thickness of high refractive index layer. Meanwhile, the transparency bandwidth is found to be tunable in a large range by varying the geometric dimension. More significantly, from the point view of applications, the proposed method of achieving broadband transparency can perfectly tolerate the misalignment and asymmetry of periodic nanoparticles on the top and bottom, which is empowered by the unique dual of coupling-in and coupling-out processes within the pair of blackbodies. Moreover, roughness has little influence on its transmission performance. According to the coupled mode theory, the distinguished transmittance performance is physically interpreted by the radiative decay rate of the entire system. In addition to the feature of uniquely robust broadband transparency, such a ultrathin seamless nanostructure (in the presence of a uniform silver layer) also provides polarization-independent and angle-independent operations. Therefore, it may power up a wide spectrum of exciting applications in thin film protection, touch screen techniques, absorber-emitter transformation, etc. Electronic supplementary information (ESI) available: Comparison of transmittance spectra between structures with and without Ag film at the middle. Transmittance spectra of structures with different thicknesses of Ag film. See DOI: 10.1039/c3nr34278f

Vertical transport in graphene-hexagonal boron nitride heterostructure devices

PubMed Central

Bruzzone, Samantha; Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

2015-01-01

Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double barriers separated by a graphene layer we do not observe resonant tunneling, but a significant increase of the tunneling probability with respect to a single barrier of thickness equal to the sum of the two barriers. This is due to the fact that the graphene layer acts as an effective phase randomizer, suppressing resonant tunneling and effectively letting a double-barrier structure behave as two single-barriers in series. Finally, we use multiscale simulations to reproduce a current-voltage characteristics resembling that of a resonant tunneling diode, that has been experimentally observed in single barrier structure. The peak current is obtained when there is perfect matching between the densities of states of the cathode and anode graphene regions. PMID:26415656

Zeroth order Fabry-Perot resonance enabled ultra-thin perfect light absorber using percolation aluminum and silicon nanofilms

DOE PAGES

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

2016-03-04

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Homoepitaxial graphene tunnel barriers for spin transport

NASA Astrophysics Data System (ADS)

Friedman, Adam

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. We demonstrate successful tunneling, charge, and spin transport with a fluorinated graphene tunnel barrier on a graphene channel. We show that while spin transport stops short of room temperature, spin polarization efficiency values are the highest of any graphene spin devices. We also demonstrate that hydrogenation of graphene can also be used to create a tunnel barrier. We begin with a four-layer stack of graphene and hydrogenate the top few layers to decouple them from the graphene transport channel beneath. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies. The measured spin polarization efficiencies for hydrogenated graphene are higher than most oxide tunnel barriers on graphene, but not as high as with fluorinated graphene tunnel barriers. However, here we show that spin transport persists up to room temperature. Our results for the hydrogenated graphene tunnel barriers are compared with fluorinated tunnel barriers and we discuss the possibility that magnetic moments in the graphene tunnel barriers affect the spin transport of our devices.

Pseudospin Electronics in Phosphorene Nanoribbons

DOE PAGES

Soleimanikahnoj, S.; Knezevic, I.

2017-12-19

Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can generate pseudospin-polarized current. Also, we proposemore » edge- and layer-pseudospin valves that operate analogously to conventional spin valves. The performance of valves in each pseudospin scheme is benchmarked by the pseudomagnetoresistance (PMR) ratio. The edge-pseudospin valve shows a nearly perfect PMR, with remarkable robustness against device parameters and disorder. Furthermore, these results may initiate new developments in pseudospin electronics.« less

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

PubMed

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Multi-layer robot skin with embedded sensors and muscles

NASA Astrophysics Data System (ADS)

Tomar, Ankit; Tadesse, Yonas

2016-04-01

Soft artificial skin with embedded sensors and actuators is proposed for a crosscutting study of cognitive science on a facial expressive humanoid platform. This paper focuses on artificial muscles suitable for humanoid robots and prosthetic devices for safe human-robot interactions. Novel composite artificial skin consisting of sensors and twisted polymer actuators is proposed. The artificial skin is conformable to intricate geometries and includes protective layers, sensor layers, and actuation layers. Fluidic channels are included in the elastomeric skin to inject fluids in order to control actuator response time. The skin can be used to develop facially expressive humanoid robots or other soft robots. The humanoid robot can be used by computer scientists and other behavioral science personnel to test various algorithms, and to understand and develop more perfect humanoid robots with facial expression capability. The small-scale humanoid robots can also assist ongoing therapeutic treatment research with autistic children. The multilayer skin can be used for many soft robots enabling them to detect both temperature and pressure, while actuating the entire structure.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Perfect Undetectable Acoustic Device from Fabry-Pérot Resonances

NASA Astrophysics Data System (ADS)

Chen, Huanyang; Zhou, Yangyang; Zhou, Mengying; Xu, Lin; Liu, Qing Huo

2018-02-01

Transformation acoustics is a method to design novel acoustic devices, while the complexity of the material parameters hinders its progress. In this paper, we analytically present a three-dimensional perfect undetectable acoustic device from Fabry-Pérot resonances and confirm its functionality from Mie theory. Such a mechanism goes beyond the traditional transformation acoustics. In addition, such a reduced version can be realized by holey-structured metamaterials. Our theory paves a way to the implementation of three-dimensional transformation acoustic devices.

Structural defects in bulk GaN

NASA Astrophysics Data System (ADS)

Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

2014-10-01

Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

Vorticity interaction effects on blunt bodies. [hypersonic viscous shock layers

NASA Technical Reports Server (NTRS)

Anderson, E. C.; Wilcox, D. C.

1977-01-01

Numerical solutions of the viscous shock layer equations governing laminar and turbulent flows of a perfect gas and radiating and nonradiating mixtures of perfect gases in chemical equilibrium are presented for hypersonic flow over spherically blunted cones and hyperboloids. Turbulent properties are described in terms of the classical mixing length. Results are compared with boundary layer and inviscid flowfield solutions; agreement with inviscid flowfield data is satisfactory. Agreement with boundary layer solutions is good except in regions of strong vorticity interaction; in these flow regions, the viscous shock layer solutions appear to be more satisfactory than the boundary layer solutions. Boundary conditions suitable for hypersonic viscous shock layers are devised for an advanced turbulence theory.

Metamaterial Perfect Absorber Analyzed by a Meta-Cavity Model Consisting of Multilayer Metasurfaces (Postprint)

DTIC Science & Technology

2017-09-05

metamaterial perfect absorber behaves as a meta-cavity bounded between a resonant metasurface and a metallic thin- film reflector. The perfect absorption...cavity quantum electrodynamics devices. 15. SUBJECT TERMS Metamaterial; meta-cavity; metallic thin- film reflector; Fabry-Perot cavity resonance...metamaterial perfect absorber behaves as a meta-cavity bounded between a resonant metasurface and a metallic thin- film reflector. The perfect absorption is

Stacking fault induced tunnel barrier in platelet graphite nanofiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lan, Yann-Wen, E-mail: chiidong@phys.sinica.edu.tw, E-mail: ywlan@phys.sinica.edu.tw; Chang, Yuan-Chih; Chang, Chia-Seng

A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Huixu; Li, Zhigang; Stan, Liliana

Broadband perfect absorber based on one ultrathin layer of the refractory metal chromium without structure pat- terning is proposed and demonstrated. The ideal permittivity of the metal layer for achieving broadband perfect absorption is derived based on the impedance transformation method. Since the permittivity of the refractory metal chromium matches this ideal permittivity well in the visible and near-infrared range, a silica-chromium-silica three-layer absorber is fabricated to demonstrate the broadband perfect absorption. The experimental results under normal incidence show that the absorption is above 90% over the wavelength range of 0.4–1.4 μm, and the measurements under angled incidence within 400–800more » nm prove that the absorber is angle-insensitive and polarization- independent.« less

The Analysis and Construction of Perfectly Matched Layers for the Linearized Euler Equations

NASA Technical Reports Server (NTRS)

Hesthaven, J. S.

1997-01-01

We present a detailed analysis of a recently proposed perfectly matched layer (PML) method for the absorption of acoustic waves. The split set of equations is shown to be only weakly well-posed, and ill-posed under small low order perturbations. This analysis provides the explanation for the stability problems associated with the split field formulation and illustrates why applying a filter has a stabilizing effect. Utilizing recent results obtained within the context of electromagnetics, we develop strongly well-posed absorbing layers for the linearized Euler equations. The schemes are shown to be perfectly absorbing independent of frequency and angle of incidence of the wave in the case of a non-convecting mean flow. In the general case of a convecting mean flow, a number of techniques is combined to obtain a absorbing layers exhibiting PML-like behavior. The efficacy of the proposed absorbing layers is illustrated though computation of benchmark problems in aero-acoustics.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

An Absorbing Boundary Condition for the Lattice Boltzmann Method Based on the Perfectly Matched Layer

PubMed Central

Najafi-Yazdi, A.; Mongeau, L.

2012-01-01

The Lattice Boltzmann Method (LBM) is a well established computational tool for fluid flow simulations. This method has been recently utilized for low Mach number computational aeroacoustics. Robust and nonreflective boundary conditions, similar to those used in Navier-Stokes solvers, are needed for LBM-based aeroacoustics simulations. The goal of the present study was to develop an absorbing boundary condition based on the perfectly matched layer (PML) concept for LBM. The derivation of formulations for both two and three dimensional problems are presented. The macroscopic behavior of the new formulation is discussed. The new formulation was tested using benchmark acoustic problems. The perfectly matched layer concept appears to be very well suited for LBM, and yielded very low acoustic reflection factor. PMID:23526050

Training and operation of an integrated neuromorphic network based on metal-oxide memristors.

PubMed

Prezioso, M; Merrikh-Bayat, F; Hoskins, B D; Adam, G C; Likharev, K K; Strukov, D B

2015-05-07

Despite much progress in semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex, with its approximately 10(14) synapses, makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging. To provide comparable complexity while operating much faster and with manageable power dissipation, networks based on circuits combining complementary metal-oxide-semiconductors (CMOSs) and adjustable two-terminal resistive devices (memristors) have been developed. In such circuits, the usual CMOS stack is augmented with one or several crossbar layers, with memristors at each crosspoint. There have recently been notable improvements in the fabrication of such memristive crossbars and their integration with CMOS circuits, including first demonstrations of their vertical integration. Separately, discrete memristors have been used as artificial synapses in neuromorphic networks. Very recently, such experiments have been extended to crossbar arrays of phase-change memristive devices. The adjustment of such devices, however, requires an additional transistor at each crosspoint, and hence these devices are much harder to scale than metal-oxide memristors, whose nonlinear current-voltage curves enable transistor-free operation. Here we report the experimental implementation of transistor-free metal-oxide memristor crossbars, with device variability sufficiently low to allow operation of integrated neural networks, in a simple network: a single-layer perceptron (an algorithm for linear classification). The network can be taught in situ using a coarse-grain variety of the delta rule algorithm to perform the perfect classification of 3 × 3-pixel black/white images into three classes (representing letters). This demonstration is an important step towards much larger and more complex memristive neuromorphic networks.

Magnetic bilayer-skyrmions without skyrmion Hall effect

NASA Astrophysics Data System (ADS)

Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

2016-01-01

Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed.

Generic three-dimensional wavelength routers based on cross connects of multilayer diffractive elements

NASA Astrophysics Data System (ADS)

Deng, Xuegong; Chen, Ray T.

2001-05-01

We report a generic method to construct 3D wavelength routers by adapting a novel design for multi-optical wavelength interconnects (MOWI's). Optical wavelength- selective (WS) interconnections are realized by resorting to layered diffractive phase elements. Besides, we simultaneously carry out several other integrated operations on the incident beams according to their wavelengths. We demonstrate an 4 X 4 inline 3D WS optical crossconnect and a 1D 1 X 8 WS perfect shuffler. The devices are well feasible for mass production by using current standard microelectronics technologies. It is plausible that the proposed WS MOWI scenario will find critical applications in module-to-module and board-to-board optical interconnect systems, as well as in other devices for short-link multi- wavelength networks that would benefit from function integration.

Hollow V(2)O(5) nanoparticles (fullerene-like analogues) prepared by laser ablation.

PubMed

Levi, Roi; Bar-Sadan, Maya; Albu-Yaron, Ana; Popovitz-Biro, Ronit; Houben, Lothar; Shahar, Chen; Enyashin, Andrey; Seifert, Gotthard; Prior, Yehiam; Tenne, Reshef

2010-08-18

Nanoparticles of materials with layered structure are able to spontaneously form closed-cage nanostructures such as nested fullerene-like nanoparticles and nanotubes. This propensity has been demonstrated in a large number of compounds such as WS(2), NiCl(2), and others. Layered metal oxides possess a higher ionic character and consequently are stiffer and cannot be evenly folded. Vanadium pentoxide (V(2)O(5)), a layered metal oxide, has received much attention due to its attractive qualities in numerous applications such as catalysis and electronic and optical devices and as an electrode material for lithium rechargeable batteries. The synthesis by pulsed laser ablation (PLA) of V(2)O(5) hollow nanoparticles, which are closely (nearly) associated with inorganic "fullerene-like" (NIF-V(2)O(5)) nanoparticles, but not quite as perfect, is reported in the present work. The relation between the PLA conditions and the NIF-V(2)O(5) morphology is elucidated. A new mechanism leading to hollow nanostructure via crystallization of lower density amorphous nanoparticles is proposed. Transmission electron microscopy (TEM) is used extensively in conjunction with structural modeling of the NIF-V(2)O(5) in order to study the complex 3-D structure of the NIF-V(2)O(5) nanoparticles. This structure was shown to be composed of facets with their low-energy surfaces pointing outward and seamed by defective domains. These understandings are used to formulate a formation mechanism and may improve the function of V(2)O(5) in its many uses through additional morphological control. Furthermore, this study outlines which properties are required from layered compounds to fold into perfectly closed-cage IF nanoparticles.

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.

PubMed

Zhu, Tongtong; Liu, Yingjun; Ding, Tao; Fu, Wai Yuen; Jarman, John; Ren, Christopher Xiang; Kumar, R Vasant; Oliver, Rachel A

2017-03-27

Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11-20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.

Generation and characterization of a perfect vortex beam with a large topological charge through a digital micromirror device.

PubMed

Chen, Yue; Fang, Zhao-Xiang; Ren, Yu-Xuan; Gong, Lei; Lu, Rong-De

2015-09-20

Optical vortices are associated with a spatial phase singularity. Such a beam with a vortex is valuable in optical microscopy, hyper-entanglement, and optical levitation. In these applications, vortex beams with a perfect circle shape and a large topological charge are highly desirable. But the generation of perfect vortices with high topological charges is challenging. We present a novel method to create perfect vortex beams with large topological charges using a digital micromirror device (DMD) through binary amplitude modulation and a narrow Gaussian approximation. The DMD with binary holograms encoding both the spatial amplitude and the phase could generate fast switchable, reconfigurable optical vortex beams with significantly high quality and fidelity. With either the binary Lee hologram or the superpixel binary encoding technique, we were able to generate the corresponding hologram with high fidelity and create a perfect vortex with topological charge as large as 90. The physical properties of the perfect vortex beam produced were characterized through measurements of propagation dynamics and the focusing fields. The measurements show good consistency with the theoretical simulation. The perfect vortex beam produced satisfies high-demand utilization in optical manipulation and control, momentum transfer, quantum computing, and biophotonics.

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

PubMed Central

Dhanabalan, Sathish Chander; Ponraj, Joice Sophia; Guo, Zhinan

2017-01-01

The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two‐dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications— this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few‐layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state‐of‐art of phosphorene‐based devices. In addition, a detailed presentation on the demand for future studies to promote well‐systemized fabrication methods towards large‐area, high‐yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered. PMID:28638779

A computer program for two-dimensional and axisymmetric nonreacting perfect gas and equilibrium chemically reacting laminar, transitional and-or turbulent boundary layer flows

NASA Technical Reports Server (NTRS)

Miner, E. W.; Anderson, E. C.; Lewis, C. H.

1971-01-01

A computer program is described in detail for laminar, transitional, and/or turbulent boundary-layer flows of non-reacting (perfect gas) and reacting gas mixtures in chemical equilibrium. An implicit finite difference scheme was developed for both two dimensional and axisymmetric flows over bodies, and in rocket nozzles and hypervelocity wind tunnel nozzles. The program, program subroutines, variables, and input and output data are described. Also included is the output from a sample calculation of fully developed turbulent, perfect gas flow over a flat plate. Input data coding forms and a FORTRAN source listing of the program are included. A method is discussed for obtaining thermodynamic and transport property data which are required to perform boundary-layer calculations for reacting gases in chemical equilibrium.

Comparison among perfect-C®, zero-P®, and plates with a cage in single-level cervical degenerative disc disease.

PubMed

Noh, Sung Hyun; Zhang, Ho Yeol

2018-01-25

We intended to analyze the efficacy of a new integrated cage and plate device called Perfect-C for anterior cervical discectomy and fusion (ACDF) to cure single-level cervical degenerative disc disease. We enrolled 148 patients who were subjected to single-level ACDF with one of the following three surgical devices: a Perfect-C implant (41 patients), a Zero-P implant (36 patients), or a titanium plate with a polyetheretherketone (PEEK) cage (71 patients). We conducted a retrospective study to compare the clinical and radiological results among the three groups. The length of the operation, intraoperative blood loss, and duration of hospitalization were significantly lower in the Perfect-C group than in the Zero-P and plate-with-cage groups (P < 0.05). At the last follow-up visit, heterotopic ossification (HO) was not observed in any cases (0%) in the Perfect-C and Zero-P groups but was noted in 21 cases (30%) in the plate-with-cage group. The cephalad and caudal plate-to-disc distance (PDD) and the cephalad and caudal PDD/anterior body height (ABH) were significantly greater in the Perfect-C and Zero-P groups than in the plate-with-cage group (P < 0.05). Subsidence occurred in five cases (14%) in the Perfect-C group, in nine cases (25%) in the Zero-P group, and in 15 cases (21%) in the plate-with-cage group. Fusion occurred in 37 cases (90%) in the Perfect-C group, in 31 cases (86%) in the Zero-P group, and in 68 cases (95%) in the plate-with-cage group. The Perfect-C, Zero-P, and plate-with-cage devices are effective for treating single-level cervical degenerative disc disease. However, the Perfect-C implant has many advantages over both the Zero-P implant and conventional plate-cage treatments. The Perfect-C implant was associated with shorter operation times and hospitalization durations, less blood loss, and lower subsidence rates compared with the Zero-P implant or the titanium plate with a PEEK cage.

Towards perfect light coupling and absorption in nanomembranes with omni-directional anti-reflection and photonic crystal structures

NASA Astrophysics Data System (ADS)

Chadha, Arvinder Singh

Silicon photonics is realized as a promising platform to meet the requirements of higher bandwidth and low cost high density monolithic integration. More recent demonstrations of a variety of stretchable, foldable and transfer printed ultra-thin silicon integrated circuits have instigated the use of flexible silicon nanomembrane for practical applications. Equally impressive innovations are demonstrated in the area of flat screen displays, smart cards, eyeglasses, and wearable displays. However, the overall efficiency of a variety of optical device is limited by poor light management resulting from difficulty of light coupling, small absorption volume in thin-film nanomembrane, and glare at oblique incidence to name a few. The aim of this thesis is to present the work of micro- and nano-scale structures for out-of-plane light coupling and absorption for integrated silicon photonics and high performance solar cells and photodetectors, with maximum absorption in the functional layer and minimal front-surface reflection and minimal rear-surface transmission. Perfect absorption in a variety of semiconductor nanomembranes (NM) and atomic layers of two dimensional (2D) materials over different wavelength spectrum is realized due to the local field intensity enhancement at critical coupling to the guided resonances of a photonic crystal (PC). A judicious choice of grating parameters tailors the power diffracted in the zeorth order and higher order modes making the device work as a broadband reflector, an in-plane coupler or a combination of both reflector and an in-plane coupler. At surface normal incidence, the polarization dependence of the grating based reflector is eliminated by the use of 2D photonic crystals. The incorporation of such a reflector after the functional nanomembrane layer reduces the back-surface transmission. Effect of incident angle, polarization and incident plane misalignment dependence on the reflection of a silicon NM based reflector are investigated in detail. The front-surface Fresnel reflection is reduced with the incorporation of an omni-directional anti-reflection coating (Omni-ARC) based on nanostructures or by deposition of graded refractive index (GRIN) films. A design methodology based on the comparison of the rate of change of the refractive index profile of nanostructures of different shapes and thickness as an equivalent GRIN film suggests the minimum feature size needed to give near perfect ARC. Numerical models were built to account for the non - uniform GRIN film deposition on both rigid and flexible, flat and curved surfaces resulting from the variation in the resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) process technology. With the miniaturization of the devices, the effect of finite beam size and finite active area of the photonic components on the optical properties like transmission, reflection and scattering loss was studied as well. All the numerical studies presented in the thesis are validated by experimental results.

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

PubMed

Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2017-09-01

The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Catenary optics for achromatic generation of perfect optical angular momentum

PubMed Central

Pu, Mingbo; Li, Xiong; Ma, Xiaoliang; Wang, Yanqin; Zhao, Zeyu; Wang, Changtao; Hu, Chenggang; Gao, Ping; Huang, Cheng; Ren, Haoran; Li, Xiangping; Qin, Fei; Yang, Jing; Gu, Min; Hong, Minghui; Luo, Xiangang

2015-01-01

The catenary is the curve that a free-hanging chain assumes under its own weight, and thought to be a “true mathematical and mechanical form” in architecture by Robert Hooke in the 1670s, with nevertheless no significant phenomena observed in optics. We show that the optical catenary can serve as a unique building block of metasurfaces to produce continuous and linear phase shift covering [0, 2π], a mission that is extremely difficult if not impossible for state-of-the-art technology. Via catenary arrays, planar optical devices are designed and experimentally characterized to generate various kinds of beams carrying orbital angular momentum (OAM). These devices can operate in an ultra-broadband spectrum because the anisotropic modes associated with the spin-orbit interaction are almost independent of the incident light frequency. By combining the optical and topological characteristics, our approach would allow the complete control of photons within a single nanometric layer. PMID:26601283

Catenary optics for achromatic generation of perfect optical angular momentum.

PubMed

Pu, Mingbo; Li, Xiong; Ma, Xiaoliang; Wang, Yanqin; Zhao, Zeyu; Wang, Changtao; Hu, Chenggang; Gao, Ping; Huang, Cheng; Ren, Haoran; Li, Xiangping; Qin, Fei; Yang, Jing; Gu, Min; Hong, Minghui; Luo, Xiangang

2015-10-01

The catenary is the curve that a free-hanging chain assumes under its own weight, and thought to be a "true mathematical and mechanical form" in architecture by Robert Hooke in the 1670s, with nevertheless no significant phenomena observed in optics. We show that the optical catenary can serve as a unique building block of metasurfaces to produce continuous and linear phase shift covering [0, 2π], a mission that is extremely difficult if not impossible for state-of-the-art technology. Via catenary arrays, planar optical devices are designed and experimentally characterized to generate various kinds of beams carrying orbital angular momentum (OAM). These devices can operate in an ultra-broadband spectrum because the anisotropic modes associated with the spin-orbit interaction are almost independent of the incident light frequency. By combining the optical and topological characteristics, our approach would allow the complete control of photons within a single nanometric layer.

The analysis of a nonsimilar laminar boundary layer

NASA Technical Reports Server (NTRS)

Stalmach, D. D.; Bertin, J. J.

1978-01-01

A computer code is described which yields accurate solutions for a broad range of laminar, nonsimilar boundary layers, providing the inviscid flow field is known. The boundary layer may be subject to mass injection for perfect-gas, nonreacting flows. If no mass injection is present, the code can be used with either perfect-gas or real-gas thermodynamic models. Solutions, ranging from two-dimensional similarity solutions to solutions for the boundary layer on the Space Shuttle Orbiter during reentry conditions, have been obtained with the code. Comparisons of these solutions, and others, with solutions presented in the literature; and with solutions obtained from other codes, demonstrate the accuracy of the present code.

A proposal of a perfect graphene absorber with enhanced design and fabrication tolerance.

PubMed

Lee, Sangjun; Tran, Thang Q; Heo, Hyungjun; Kim, Myunghwan; Kim, Sangin

2017-07-06

We propose a novel device structure for the perfect absorption of a one-sided lightwavve illumination, which consists of a high-contrast grating (HCG) and an evanescently coupled slab with an absorbing medium (graphene). The operation principle and design process of the proposed structure are analyzed using the coupled mode theory (CMT), which is confirmed by the rigorous coupled wave analysis (RCWA). According to the CMT analysis, in the design of the proposed perfect absorber, the HCG, functioning as a broadband reflector, and the lossy slab structure can be optimized separately. In addition, we have more design parameters than conditions to satisfy; that is, we have more than enough degrees of freedom in the device design. This significantly relieves the complexity of the perfect absorber design. Moreover, in the proposed perfect absorber, most of the incident wave is confined in the slab region with strong field enhancement, so that the absorption performance is very tolerant to the variation of the design parameters near the optimal values for the perfect absorption. It has been demonstrated numerically that absorption spectrum tuning over a wider wavelength range of ~300 nm is possible, keeping significantly high maximum absorption (>95%). It is also shown that the proposed perfect absorber outperforms the previously proposed scheme in all aspects.

GaAs buffer layer technique for vertical nanowire growth on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaoqing, E-mail: steelxu@stanford.edu; Parizi, Kokab B.; Huo, Yijie

2014-02-24

Gold catalyzed vapor-liquid-solid method is widely applied to III–V nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surfacemore » leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.« less

Applications of remanent supermirror polarizers

NASA Astrophysics Data System (ADS)

Böni, P.; Clemens, D.; Kumar, M. Senthil; Pappas, C.

1999-06-01

Recent developments in sputtering techniques allow the fabrication of multilayers with a high degree of perfection over large areas. We show, that using reactive sputtering, it is possible to adjust the index of refraction for neutrons, ni, of the individual layers. This property is particularly important for polarizing mirrors, where nnm for the non-magnetic layers can be matched to nm of the magnetic layers such that neutrons for one spin-eigenstate are not reflected by the coating, whereas the reflectivity is high for the other spin-eigenstate. In addition, by using anisotropic sputtering conditions it is possible to orient the easy axis of magnetization within the plane of the mirrors in any particular direction resulting in a simultaneous appearance of a pronounced remanence and coercivity. Remanent polarizers can be used as broad band spin selectors at continuous and in particular at pulsed neutron sources thus eliminating the need of spin flippers, whose performance depends on the wavelength of the neutrons and is often strongly influenced by stray magnetic fields from the sample environment. The possibility to operate remanent supermirrors in arbitrary small fields leads to attractive applications of polarizing devices in low field environments such as they occur in neutron-spin-echo or in spin selective neutron guides. We present applications, where several tasks like polarizing, focusing and spin selection are performed in one single device thus reducing the problem of phase space matching between different neutron optical components.

Coherent perfect rotation

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Dawson, Nathan J.; Andrews, James H.

2012-09-01

Two classes of conservative, linear, optical rotary effects (optical activity and Faraday rotation) are distinguished by their behavior under time reversal. Faraday rotation, but not optical activity, is capable of coherent perfect rotation, by which we mean the complete transfer of counterpropagating coherent light fields into their orthogonal polarization. Unlike coherent perfect absorption, however, this process is explicitly energy conserving and reversible. Our study highlights the necessity of time-reversal-odd processes (not just absorption) and coherence in perfect mode conversion and thus informs the optimization of active multiport optical devices.

The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons

NASA Astrophysics Data System (ADS)

Mohammadi, Amin; Haji-Nasiri, Saeed

2018-04-01

By applying non-equilibrium Green's functions (NEGF) in combination with tight-binding (TB) model, we investigate and compare the electronic transport properties of perfect and defected bilayer armchair graphene nanoribbons (BAGNRs) under finite bias. Two typical defects which are placed in the middle of top layer (i.e. single vacancy (SV) and stone wale (SW) defects) are examined. The results reveal that in both perfect and defected bilayers, the maximum current refers to β-AB, AA and α-AB stacking orders, respectively, since the intermolecular interactions are stronger in them. Moreover it is observed that a SV decreases the current in all stacking orders, but the effects of a SW defect is nearly unpredictable. Besides, we introduced a sequential switching behavior and the effects of defects on the switching performance is studied as well. We found that a SW defect can significantly improve the switching behavior of a bilayer system. Transmission spectrum, band structure, molecular energy spectrum and molecular projected self-consistent Hamiltonian (MPSH) are analyzed subsequently to understand the electronic transport properties of these bilayer devices which can be used in developing nano-scale bilayer systems.

Optically transparent microwave screens based on engineered graphene layers.

PubMed

Grande, M; Bianco, G V; Vincenti, M A; de Ceglia, D; Capezzuto, P; Petruzzelli, V; Scalora, M; Bruno, G; D'Orazio, A

2016-10-03

We propose an innovative approach for the realization of a microwave absorber fully transparent in the optical regime. This device is based on the Salisbury screen configuration, which consists of a lossless spacer, sandwiched between two graphene sheets whose sheet resistances are different and properly engineered. Experimental results show that it is possible to achieve near-perfect electromagnetic absorption in the microwave X-band. These findings are fully supported by an analytical approach based on an equivalent circuital model. Engineering and integration of graphene sheets could facilitate the realization of innovative microwave absorbers with additional electromagnetic and optical functionalities that could circumvent some of the major limitations of opaque microwave absorbers.

Optimized dielectric properties of SrTiO3:Nb /SrTiO3 (001) films for high field effect charge densities

NASA Astrophysics Data System (ADS)

Cai, Xiuyu; Frisbie, C. Daniel; Leighton, C.

2006-12-01

The authors report the growth, structural and electrical characterizations of SrTiO3 films deposited on conductive SrTiO3:Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ˜200 (for a thickness of 1150Å). The breakdown fields in SrTiO3:Nb /SrTiO3/Ag capacitors are consistent with induced charge densities >1×1014cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides.

PubMed

Zhao, Pei; Li, Jianwei; Jin, Hao; Yu, Lin; Huang, Baibiao; Ying, Dai

2018-04-18

Giant tunnel magnetoresistance (TMR) and perfect spin-injection efficiency (SIE) are extremely significant for modern spintronic devices. Quantum transport properties in a two-dimensional (2D) VS2/MoS2/VS2 magnetic tunneling junction (MTJ) are investigated theoretically within the framework of density functional theory combining with the non-equilibrium Green's functions (DFT-NEGF) method. Our results indicate that the designed MTJ exhibits a TMR with a value up to 4 × 103, which can be used as a switch of spin-electron devices. And due to the huge barrier for spin-down transport, the spin-down electrons could hardly cross the central scattering region, thus achieving a perfect SIE. Furthermore, we also explore for the effect of bias voltage on the TMR and SIE. We find that the TMR increases with the increasing bias voltage, and the SIE is robust against either bias or gate voltage in MTJs, which can serve as effective spin filter devices. Our results can not only give fresh impetus to the research community to build MTJs but also provide potential materials for spintronic devices.

Numerical solution of the hypersonic viscous-shock-layer equations for laminar, transitional, and turbulent flows of a perfect gas over blunt axially symmetric bodies

NASA Technical Reports Server (NTRS)

Anderson, E. C.; Moss, J. N.

1975-01-01

The viscous shock layer equations applicable to hypersonic laminar, transitional, and turbulent flows of a perfect gas over two-dimensional plane or axially symmetric blunt bodies are presented. The equations are solved by means of an implicit finite difference scheme, and the results are compared with a turbulent boundary layer analysis. The agreement between the two solution procedures is satisfactory for the region of flow where streamline swallowing effects are negligible. For the downstream regions, where streamline swallowing effects are present, the expected differences in the two solution procedures are evident.

Development of a Perfectly Matched Layer Technique for a Discontinuous-Galerkin Spectral-Element Method

NASA Technical Reports Server (NTRS)

Garai, Anirban; Diosady, Laslo T.; Murman, Scott M.; Madavan, Nateri K.

2016-01-01

The perfectly matched layer (PML) technique is developed in the context of a high- order spectral-element Discontinuous-Galerkin (DG) method. The technique is applied to a range of test cases and is shown to be superior compared to other approaches, such as those based on using characteristic boundary conditions and sponge layers, for treating the inflow and outflow boundaries of computational domains. In general, the PML technique improves the quality of the numerical results for simulations of practical flow configurations, but it also exhibits some instabilities for large perturbations. A preliminary analysis that attempts to understand the source of these instabilities is discussed.

Hybrid plasmonic electro-optical absorption modulator based on epsilon-near-zero characteristics of ITO

NASA Astrophysics Data System (ADS)

Abdelatty, M. Y.; Badr, M. M.; Swillam, M. A.

2018-03-01

Using transparent conducting oxides (TCOs), like indium-tin-oxide (ITO), for optical modulation attracted research interest because of their epsilon-near-zero (ENZ) characteristics at telecom wavelengths. Utilizing indium-tin-oxide (ITO) in multilayer structure modulators, optical absorption of the active ITO layer can be electrically modulated over a large spectrum range. Although they show advances over common silicon electro-optical modulators (EOMs), they suffer from high insertion losses. To reduce insertion losses and device footprints without sacrificing bandwidth and modulation strength, slot waveguides are promising options because of their high optical confinement. In this paper, we present the study and the design of an electro-optical absorption modulator based on electrically tuning ITO carrier density inside a MOS structure. The device structure is based on dielectric slot waveguide with an ITO plasmonic waveguide modulation section. By changing the dimensions, the effective refractive indices for the slot mode and the off-sate mode of the plasmonic section can be matched. When applying electric field to the plasmonic section (on-state), carriers are generated at the ITO-dielectric interface that result in changing the layer where the electric field is confined from a transparent layer into a lossy layer. A finite difference time domain method with perfect matching layer (PML) absorbing boundary conditions is taken up to simulate and analyze this design. An extinction ratio of 2.3 dB is achieved for a 1-μm-short modulation section, at the telecommunications wavelength (1.55 μm). This EOM has advantages of simple design, easy fabrication, compact size, compatibility with existing silicon photonics platforms, as well as broadband performance.

Extraordinary capabilities of optical devices incorporating guided-mode resonance gratings: application summary and recent examples

NASA Astrophysics Data System (ADS)

Magnusson, Robert; Yoon, Jae Woong; Amin, Mohammad Shyiq; Khaleque, Tanzina; Uddin, Mohammad Jalal

2014-03-01

For selected device concepts that are members of an evolving class of photonic devices enabled by guided-mode resonance (GMR) effects, we review physics of operation, design, fabrication, and characterization. We summarize the application potential of this field and provide new and emerging aspects. Our chosen examples include resonance elements with extremely wide reflection bands. Thus, in a multilevel structure with conformal germanium (Ge) films, reflectance exceeds 99% for spectral widths approaching 1100 nm. A simpler design, incorporating a partially etched single Ge layer on a glass substrate, exhibits a high-reflectance bandwidth close to 900 nm. We present a couple of interesting new device concepts enabled by GMRs coexisting with the Rayleigh anomaly. Our example Rayleigh reflector exhibits a wideband high-efficiency flattop spectrum and extremely rapid angular transitions. Moreover, we show that it is possible to fashion transmission filters by excitation of leaky resonant modes at the Rayleigh anomaly in a subwavelength nanograting. A unique transmission spectrum results, which is tightly delimited in angle and wavelength as experimentally demonstrated. We update our application list with new developments including GMR-based coherent perfect absorbers, multiparametric biosensors, and omnidirectional wideband absorbers.

UNIPIC code for simulations of high power microwave devices

NASA Astrophysics Data System (ADS)

Wang, Jianguo; Zhang, Dianhui; Liu, Chunliang; Li, Yongdong; Wang, Yue; Wang, Hongguang; Qiao, Hailiang; Li, Xiaoze

2009-03-01

In this paper, UNIPIC code, a new member in the family of fully electromagnetic particle-in-cell (PIC) codes for simulations of high power microwave (HPM) generation, is introduced. In the UNIPIC code, the electromagnetic fields are updated using the second-order, finite-difference time-domain (FDTD) method, and the particles are moved using the relativistic Newton-Lorentz force equation. The convolutional perfectly matched layer method is used to truncate the open boundaries of HPM devices. To model curved surfaces and avoid the time step reduction in the conformal-path FDTD method, CP weakly conditional-stable FDTD (WCS FDTD) method which combines the WCS FDTD and CP-FDTD methods, is implemented. UNIPIC is two-and-a-half dimensional, is written in the object-oriented C++ language, and can be run on a variety of platforms including WINDOWS, LINUX, and UNIX. Users can use the graphical user's interface to create the geometric structures of the simulated HPM devices, or input the old structures created before. Numerical experiments on some typical HPM devices by using the UNIPIC code are given. The results are compared to those obtained from some well-known PIC codes, which agree well with each other.

Coherent Perfect Rotation

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Dawson, Nathan; Andrews, James

2012-04-01

Two classes of conservative, linear, optical rotary effects (optical activity and Faraday rotation) are distinguished by their behavior under time reversal. In analogy with coherent perfect absorption, where counterpropagating light fields are controllably converted into other degrees of freedom, we show that in a linear-conservative medium only time-odd (Faraday) rotation is capable of coherent perfect rotation, by which we mean the complete transfer of counterpropagating coherent light fields into their orthogonal polarization. This highlights the necessity of time reversal odd processes (not just absorption) and coherence in perfect mode conversion and may inform device design.

Structured Metal Film as Perfect Absorber

NASA Astrophysics Data System (ADS)

Xiong, Xiang; Jiang, Shang-Chi; Peng, Ru-Wen; Wang, Mu

2014-03-01

With standing U-shaped resonators, fish-spear-like resonator has been designed for the first time as the building block to assemble perfect absorbers. The samples have been fabricated with two-photon polymerization process and FTIR measurement results support the effectiveness of the perfect absorber design. In such a structure the polarization-dependent resonance occurs between the tines of the spears instead of the conventional design where the resonance occurs between the metallic layers separated by a dielectric interlayer. The incident light neither transmits nor reflects back which results in unit absorbance. The power of light is trapped between the tines of spears and finally be absorbed. The whole structure is covered with a continuous metallic layer with good thermo-conductance, which provides an excellent approach to deal with heat dissipation, is enlightening in exploring metamaterial absorbers.

Effects on RCS of a perfect electromagnetic conductor sphere in the presence of anisotropic plasma layer

NASA Astrophysics Data System (ADS)

Ghaffar, A.; Hussan, M. M.; Illahi, A.; Alkanhal, Majeed A. S.; Ur Rehman, Sajjad; Naz, M. Y.

2018-01-01

Effects on RCS of perfect electromagnetic conductor (PEMC) sphere by coating with anisotropic plasma layer are studied in this paper. The incident, scattered and transmitted electromagnetic fields are expanded in term of spherical vector wave functions using extended classical theory of scattering. Co and cross-polarized scattered field coefficients are obtained at the interface of free space-anisotropic plasma and at anisotropic plasma-PEMC sphere core by scattering matrices method. The presented analytical expressions are general for any perfect conducting sphere (PMC, PEC, or PEMC) with general anisotropic/isotropic material coatings that include plasma and metamaterials. The behavior of the forward and backscattered radar cross section of PEMC sphere with the variation of the magnetic field strength, incident frequency, plasma density, and effective collision frequency for the co-polarized and the cross polarized fields are investigated. It is also observed from the obtained results that anisotropic layer on PEMC sphere shows reciprocal behavior as compared to isotopic plasma layer on PEMC sphere. The comparisons of the numerical results of the presented analytical expressions with available results of some special cases show the correctness of the analysis.

Band Structure Simulations of the Photoinduced Changes in the MgB₂:Cr Films.

PubMed

Kityk, Iwan V; Fedorchuk, Anatolii O; Ozga, Katarzyna; AlZayed, Nasser S

2015-04-02

An approach for description of the photoinduced nonlinear optical effects in the superconducting MgB₂:Cr₂O₃ nanocrystalline film is proposed. It includes the molecular dynamics step-by-step optimization of the two separate crystalline phases. The principal role for the photoinduced nonlinear optical properties plays nanointerface between the two phases. The first modified layers possess a form of slightly modified perfect crystalline structure. The next layer is added to the perfect crystalline structure and the iteration procedure is repeated for the next layer. The total energy here is considered as a varied parameter. To avoid potential jumps on the borders we have carried out additional derivative procedure.

Ultra-broadband microwave metamaterial absorber based on resistive sheets

NASA Astrophysics Data System (ADS)

Kim, Y. J.; Yoo, Y. J.; Hwang, J. S.; Lee, Y. P.

2017-01-01

We investigate a broadband perfect absorber for microwave frequencies, with a wide incident angle, using resistive sheets, based on both simulation and experiment. The absorber uses periodically-arranged meta-atoms, consisting of snake-shape metallic patterns and metal planes separated by three resistive sheet layers between four dielectric layers. We demonstrate the mechanism of the broadband by impedance matching with free space, and the distribution of surface currents at specific frequencies. In simulation, the absorption was over 96% in 1.4-6.0 GHz. The corresponding experimental absorption band over 96% was 1.4-4.0 GHz, however, the absorption was lower than 96% in the 4.0-6.0 GHz range because of the rather irregular thickness of the resistive sheets. Furthermore, it works for wide incident angles and is relatively independent of polarization. The design is scalable to smaller sizes in the THz range. The results of this study show potential for real applications in prevention of microwave frequency exposure, with devices such as cell phones, monitors, and microwave equipment.

Electronic resonant tunneling on graphene superlattice heterostructures with a tunable graphene layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shan; Cui, Liyong; Liu, Fen

We have theoretically investigated the electronic resonant tunneling effect in graphene superlattice heterostructures, where a tunable graphene layer is inserted between two different superlattices. It is found that a complete tunneling state appears inside the enlarged forbidden gap of the heterostructure by changing the thickness of the inserted graphene layer and the transmittance of the tunneling state depends on the thickness of the inserted layer. Furthermore, the frequency of the tunneling state changes with the thickness of the inserted graphene layer but it always located in the little overlapped forbidden gap of two graphene superlattices. Therefore, both a perfect tunnelingmore » state and an ultrawide forbidden gap are realized in such heterostrutures. Since maximum probability densities of the perfect tunneling state are highly localized near the interface between the inserted graphene layer and one graphene superlattice, it can be named as an interface-like state. Such structures are important to fabricate high-Q narrowband electron wave filters.« less

A grating coupler with a trapezoidal hole array for perfectly vertical light coupling between optical fibers and waveguides

NASA Astrophysics Data System (ADS)

Mizutani, Akio; Eto, Yohei; Kikuta, Hisao

2017-12-01

A grating coupler with a trapezoidal hole array was designed and fabricated for perfectly vertical light coupling between a single-mode optical fiber and a silicon waveguide on a silicon-on-insulator (SOI) substrate. The grating coupler with an efficiency of 53% was computationally designed at a 1.1-µm-thick buried oxide (BOX) layer. The grating coupler and silicon waveguide were fabricated on the SOI substrate with a 3.0-µm-thick BOX layer by a single full-etch process. The measured coupling efficiency was 24% for TE-polarized light at 1528 nm wavelength, which was 0.69 times of the calculated coupling efficiency for the 3.0-µm-thick BOX layer.

Selective coherent perfect absorption of subradiant mode in ultrathin bi-layer metamaterials via antisymmetric excitation

NASA Astrophysics Data System (ADS)

Tan, Wei; Zhang, Caihong; Li, Chun; Zhou, Xiaoying; Jia, Xiaoqing; Feng, Zheng; Su, Juan; Jin, Biaobing

2017-05-01

We demonstrate that the subradiant mode in ultrathin bi-layer metamaterials can be exclusively excited under two-antisymmetric-beam illumination (or equivalently, at a node of the standing wave field), while the superradiant mode is fully suppressed due to their different mode symmetry. Coherent perfect absorption (CPA) with the Lorentzian lineshape can be achieved corresponding to the subradiant mode. A theoretical model is established to distinguish the different behaviors of these two modes and to elucidate the CPA condition. Terahertz ultrathin bi-layer metamaterials on flexible polyimide substrates are fabricated and tested, exhibiting excellent agreement with theoretical predictions. This work provides physical insight into how to selectively excite the antisymmetric subradiant mode via coherence incidence.

Computed a multiple band metamaterial absorber and its application based on the figure of merit value

NASA Astrophysics Data System (ADS)

Chen, Chao; Sheng, Yuping; Jun, Wang

2018-01-01

A high performed multiple band metamaterial absorber is designed and computed through the software Ansofts HFSS 10.0, which is constituted with two kinds of separated metal particles sub-structures. The multiple band absorption property of the metamaterial absorber is based on the resonance of localized surface plasmon (LSP) modes excited near edges of metal particles. The damping constant of gold layer is optimized to obtain a near-perfect absorption rate. Four kinds of dielectric layers is computed to achieve the perfect absorption perform. The perfect absorption perform of the metamaterial absorber is enhanced through optimizing the structural parameters (R = 75 nm, w = 80 nm). Moreover, a perfect absorption band is achieved because of the plasmonic hybridization phenomenon between LSP modes. The designed metamaterial absorber shows high sensitive in the changed of the refractive index of the liquid. A liquid refractive index sensor strategy is proposed based on the computed figure of merit (FOM) value of the metamaterial absorber. High FOM values (116, 111, and 108) are achieved with three liquid (Methanol, Carbon tetrachloride, and Carbon disulfide).

Designing perfect linear polarization converters using perfect electric and magnetic conducting surfaces

PubMed Central

Zhou, Gaochao; Tao, Xudong; Shen, Ze; Zhu, Guanghao; Jin, Biaobing; Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng

2016-01-01

We propose a kind of general framework for the design of a perfect linear polarization converter that works in the transmission mode. Using an intuitive picture that is based on the method of bi-directional polarization mode decomposition, it is shown that when the device under consideration simultaneously possesses two complementary symmetry planes, with one being equivalent to a perfect electric conducting surface and the other being equivalent to a perfect magnetic conducting surface, linear polarization conversion can occur with an efficiency of 100% in the absence of absorptive losses. The proposed framework is validated by two design examples that operate near 10 GHz, where the numerical, experimental and analytic results are in good agreements. PMID:27958313

The transmission or scattering of elastic waves by an inhomogeneity of simple geometry: A comparison of theories

NASA Technical Reports Server (NTRS)

Sheu, Y. C.; Fu, L. S.

1983-01-01

The extended method of equivalent inclusions is applied to study the specific wave problems: (1) the transmission of elastic waves in an infinite medium containing a layer of inhomogeneity, and (2) the scattering of elastic waves in an infinite medium containing a perfect spherical inhomogeneity. Eigenstrains are expanded as a geometric series and a method of integration based on the inhomogeneous Helmholtz operator is adopted. This study compares results, obtained by using limited number of terms in the eigenstrain expansion, with exact solutions for the layer problem and that for a perfect sphere.

III-V compound semiconductor material characterization of microstructures and nanostructures on various optoelectronic devices with analytical transmission electron microscopy and high resolution electron microscopy

NASA Astrophysics Data System (ADS)

Zhou, Wei

Analytical Transmission Electron Microscopy (TEM) and High Resolution Electron Microscopy have been carried out to characterize microstructures and nanostructures in various III-V compound semiconductor devices by metalorganic chemical vapor deposition (MOCVD). The low-defect GaN nonplanar templates by lateral epitaxial overgrowth (LEO) has a trapezoidal cross-section with smooth (0001) and {112¯2} facets. Penetration of threading dislocations (TDs) beyond mask windows is observed in ordinary LEO substrates. In two-step LEO substrates, where TDs are engineered to bend 90° in the TD bending layer after the first LEO step, only perfect a-type dislocations with Burgers vector b = 1/3 <112¯0> are generated in the upper Post-bending layer with a density of ˜8 x 107cm-2. The demonstrated 3-dimensional dislocation spatial distribution in the LEO nonplanar substrate substantiates the dislocation reaction mechanism. Al0.07GaN/GaN superlattice can further decrease dislocations. InGaN QW thickness enhancement on top of GaN nonplanar templates has been verified to influence the optoelectronic properties significantly. Dense arrays of hexagonally ordered MOCVD-grown (In)(Ga)As nano-QDs by block copolymer nanolithography & selective area growth (SAG), approximately 20nm in diameter and 40nm apart with a density of 1011/cm 2, are perfect crystals by TEM. V-shaped defects and worse InAs growth uniformity have been observed in multiple layers of vertically coupled self-assembled InAs nanostructure arrays on strain-modulated GaAs substrates. TEM shows a smooth coalesced GaN surface with a thickness as thin as ˜200nm after Nano-LEO and a defect reduction of 70%-75%. The (In)GaAs 20 nm twist bonded compliant substrates have almost no compliant effect and higher dislocation density, but the 10nm compliant substrates are on the contrary. A 60nm oxygen-infiltrated crystallized transition layer is observed between the amorphous oxidized layer and the crystallized unoxidized aperture in Al xGa1-xAs wet lateral oxidation, potentially influencing the current confinement characteristic of the sub-micron oxide aperture. Almost no dislocation is aroused by the wet lateral oxidation of In0.52Al 0.48As in the InP microresonator waveguides. XTEM was performed to compare InP SAG regions with 10˜50mum masks, which shows the performance deterioration of laser threshold current densities in the case of 50mum mask results from high density of dislocations induced from the highly strained QW structures caused by the high enhancements.

Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

PubMed

Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

2017-12-26

The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

Investigation of hydrodynamic behaviour of membranes using radiotracer techniques

NASA Astrophysics Data System (ADS)

Miskiewicz, A.; Zakrzewska-Trznadel, G.

2013-05-01

The aim of the work was to study membrane devices using short-lived radioisotopes like Ba-137m and Ga-68 as tracers. These radioisotopes were obtained from radionuclide generators: Cs-137/Ba-137m and Ge-68/Ga-68. The first radionuclide, namely Ba-137m with a half-life of 2.55 minutes was applied as a liquid phase tracer for studying hydrodynamic conditions inside the membrane apparatus. The membrane module with ceramic membranes was tested by using Ba-137m. The experiments showed that this radionuclide with a short half-life is a perfect tracer for liquid phase, whereas Ga-68 with longer half-life equal to 68 minutes was considered as a solid phase (bentonite) tracer. Ga-68 was used to gain more knowledge about the phenomena occurring in the membrane boundary layer. After kinetic studies of isotope adsorption into the carrier material, the growth rate of the deposit layer as well as deposit's thickness on the flat-sheet membrane were studied. The influence of such process parameters like pressure, linear velocity of liquid and feed concentration on formation of the bentonite layer on the membrane surface was studied.

Surface nano-architecture of a metal-organic framework.

PubMed

Makiura, Rie; Motoyama, Soichiro; Umemura, Yasushi; Yamanaka, Hiroaki; Sakata, Osami; Kitagawa, Hiroshi

2010-07-01

The rational assembly of ultrathin films of metal-organic frameworks (MOFs)--highly ordered microporous materials--with well-controlled growth direction and film thickness is a critical and as yet unrealized issue for enabling the use of MOFs in nanotechnological devices, such as sensors, catalysts and electrodes for fuel cells. Here we report the facile bottom-up fabrication at ambient temperature of such a perfect preferentially oriented MOF nanofilm on a solid surface (NAFS-1), consisting of metalloporphyrin building units. The construction of NAFS-1 was achieved by the unconventional integration in a modular fashion of a layer-by-layer growth technique coupled with the Langmuir-Blodgett method. NAFS-1 is endowed with highly crystalline order both in the out-of-plane and in-plane orientations to the substrate, as demonstrated by synchrotron X-ray surface crystallography. The proposed structural model incorporates metal-coordinated pyridine molecules projected from the two-dimensional sheets that allow each further layer to dock in a highly ordered interdigitated manner in the growth of NAFS-1. We expect that the versatility of the solution-based growth strategy presented here will allow the fabrication of various well-ordered MOF nanofilms, opening the way for their use in a range of important applications.

Theory of Coherent Perfect Absorption (CPA) applied to the layered polymer laser

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Andrews, James; Mao, Guilin

2010-10-01

Coherent perfect absorption (CPA) is a situation in which counterpropagating pump beams can be adjusted so that both beams are completely absorbed by the system. Using theory we delineate the conditions under which a CPA condition can be achieved in real polymeric laser films and remark on CPA's utility for enhancing these films utility.

Stability Criteria of Fullerene-like Nanoparticles: Comparing V₂O5 to Layered Metal Dichalcogenides and Dihalides.

PubMed

Levi, Roi; Bar-Sadan, Maya; Albu-Yaron, Ana; Popovitz-Biro, Ronit; Houben, Lothar; Prior, Yehiam; Tenne, Reshef

2010-08-18

Numerous examples of closed-cage nanostructures, such as nested fullerene-like nanoparticles and nanotubes, formed by the folding of materials with layered structure are known. These compounds include WS₂, NiCl₂, CdCl₂, Cs₂O, and recently V₂O₅. Layered materials, whose chemical bonds are highly ionic in character, possess relatively stiff layers, which cannot be evenly folded. Thus, stress-relief generally results in faceted nanostructures seamed by edge-defects. V₂O₅, is a metal oxide compound with a layered structure. The study of the seams in nearly perfect inorganic "fullerene-like" hollow V₂O 5 nanoparticles (NIF-V₂O₅) synthesized by pulsed laser ablation (PLA), is discussed in the present work. The relation between the formation mechanism and the seams between facets is examined. The formation mechanism of the NIF-V₂O 5 is discussed in comparison to fullerene-like structures of other layered materials, like IF structures of MoS₂, CdCl₂, and Cs₂O. The criteria for the perfect seaming of such hollow closed structures are highlighted.

Experimental realization of Coherent Perfect Rotation in TGG

NASA Astrophysics Data System (ADS)

Zhou, Chuanhong; Andrews, James; Petrus, Joshua; Crescimanno, Michael

2014-05-01

Coherent Perfect Rotation is the reversible generalization of the anti-laser process that can occur in optical systems with Faraday rotation. We describe the first experiment to verify CPR using a TGG resonator, and give an assessment of the experimentally achievable contrast ratio of the CPR resonance and remark on its utility in optical devices and related future experiments.

Coherent Perfect Rotation: The conservative analogue of CPA

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Dawson, Nathan; Andrews, James

2012-06-01

The two classes of conservative, linear, optical rotary effects (optical activity and Faraday rotation) are distinguished by their behavior under time reversal. In analogy with coherent perfect absorption (CPA) resonances, where counter-propagating light fields are completely converted into other degrees of freedom, we show that in a linear conservative medium only time-odd (Faraday) rotation is capable of coherent perfect rotation, by which we mean the complete transfer of any arbitrarily oriented polarization of light into the other orthogonal polarization via the application of phased counter-propagating light fields. This contributes to the understanding of the importance of time reversal symmetry in perfect mode conversion that may be of use in optical device design.

Viscous-shock-layer analysis of hypersonic flows over long slender vehicles. Ph.D. Thesis, 1988

NASA Technical Reports Server (NTRS)

Lee, Kam-Pui; Gupta, Roop N.

1992-01-01

An efficient and accurate method for solving the viscous shock layer equations for hypersonic flows over long slender bodies is presented. The two first order equations, continuity and normal momentum, are solved simultaneously as a coupled set. The flow conditions included are from high Reynolds numbers at low altitudes to low Reynolds numbers at high altitudes. For high Reynolds number flows, both chemical nonequilibrium and perfect gas cases are analyzed with surface catalytic effects and different turbulence models, respectively. At low Reynolds number flow conditions, corrected slip models are implemented with perfect gas case. Detailed comparisons are included with other predictions and experimental data.

Shaping perfect optical vortex with amplitude modulated using a digital micro-mirror device

NASA Astrophysics Data System (ADS)

Zhang, Chonglei; Min, Changjun; Yuan, X.-C.

2016-12-01

We propose a technique to generate of perfect optical vortex (POV) via Fourier transformation of Bessel-Gauss (BG) beams through encoding of the amplitude of the optical field with binary amplitude digital micro-mirrors device (DMD). Furthermore, we confirm the correct phase patterns of the POV with the method of Mach-Zehnder interferometer. Our approach to generate the POV has the advantages that rapidly switch among the different modes, wide spectral regions and high energy tolerance. Since the POV possess propagation properties that not shape-invariant, we therefore suppose that our proposed approach will find potential applications in optical microscopy, optical fabrication, and optical communication.

Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

NASA Astrophysics Data System (ADS)

Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

2014-10-01

Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

Freely-tunable broadband polarization rotator for terahertz waves

NASA Astrophysics Data System (ADS)

Peng, Ru-Wen; Fan, Ren-Hao; Zhou, Yu; Jiang, Shang-Chi; Xiong, Xiang; Huang, Xian-Rong; Wang, Mu

It is known that commercially-available terahertz (THz) emitters usually generate linearly polarized waves only along certain directions, but in practice, a polarization rotator that is capable of rotating the polarization of THz waves to any direction is particularly desirable and it will have various important applications. In this work, we demonstrate a freely tunable polarization rotator for broadband THz waves using a three-rotating-layer metallic grating structure, which can conveniently rotate the polarization of a linearly polarized THz wave to any desired direction with nearly perfect conversion efficiency. The device performance has been experimentally demonstrated by both THz transmission spectra and direct imaging. The polarization rotation originates from multi wave interference in the three-layer grating structure based on the scattering-matrix analysis. We can expect that this active broadband polarization rotator has wide applications in analytical chemistry, biology, communication technology, imaging, etc.. Reference: R. H. Fan, Y. Zhou, X. P. Ren, R. W. Peng, S. C. Jiang, D. H. Xu, X. Xiong, X. R. Huang, and Mu Wang, Advanced Materials 27,1201(2015). Freely-tunable broadband polarization rotator for terahertz waves.

Structural, chemical, and magnetic properties of Fe films grown on InAs(100)

NASA Astrophysics Data System (ADS)

Ruppel, L.; Witte, G.; Wöll, Ch.; Last, T.; Fischer, S. F.; Kunze, U.

2002-12-01

The structure of epitaxial Fe films grown on an InAs(100)-c(8×2)/(4×2) surface has been studied in situ by means of low-energy electron diffraction and x-ray photoelectron spectroscopy, while their magnetic properties were characterized ex situ by superconducting quantum interference device magnetometry at temperatures of 5 300 K. Deposition of iron at room temperature or below leads to the formation of a thin iron arsenide layer that floats on the Fe film upon further deposition. Postdeposition annealing causes no significant improvement of the film structure but activates a further arsenic diffusion through the Fe film. Significant exchange-bias effects were found at low temperatures for insufficiently capped and partially oxidized Fe films, and are attributed to noncollinear spin order at the Ag capping layer/Fe interface. For perfect, nonoxidized Fe films, such a noncollinear spin order at the Fe/InAs interface is excluded as no thermomagnetic irreversibilities were found. This indicates that the spin order at the Fe/InAs interface is suitable for spin injection.

Computational aspects of the smectization process in liquid crystals: An example study of a perfectly aligned two-dimensional hard-boomerang system

NASA Astrophysics Data System (ADS)

Chrzanowska, Agnieszka

2017-06-01

A replica method for calculation of smectic liquid crystal properties within the Onsager theory has been presented and applied to an exemplary case of two-dimensional perfectly aligned needlelike boomerangs. The method allows one to consider the complete influence of the interaction terms in contrast to the Fourier expansion method which uses mostly first or second order terms of expansion. The program based on the replica algorithm is able to calculate a single representative layer as an equivalent set of layers, depending on the size of the considered width of the sample integration interval. It predicts successfully smectic density distributions, energies, and layer thicknesses for different types of layer arrangement—of the antiferroelectric or of the smectic A order type. Specific features of the algorithm performance and influence of the numerical accuracy on the physical properties are presented. Future applications of the replica method to freely rotating molecules are discussed.

Computational aspects of the smectization process in liquid crystals: An example study of a perfectly aligned two-dimensional hard-boomerang system.

PubMed

Chrzanowska, Agnieszka

2017-06-01

A replica method for calculation of smectic liquid crystal properties within the Onsager theory has been presented and applied to an exemplary case of two-dimensional perfectly aligned needlelike boomerangs. The method allows one to consider the complete influence of the interaction terms in contrast to the Fourier expansion method which uses mostly first or second order terms of expansion. The program based on the replica algorithm is able to calculate a single representative layer as an equivalent set of layers, depending on the size of the considered width of the sample integration interval. It predicts successfully smectic density distributions, energies, and layer thicknesses for different types of layer arrangement-of the antiferroelectric or of the smectic A order type. Specific features of the algorithm performance and influence of the numerical accuracy on the physical properties are presented. Future applications of the replica method to freely rotating molecules are discussed.

Flexible packaging for microelectronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Benjamin John; Nielson, Gregory N.; Cruz-Campa, Jose Luis

An apparatus, method, and system, the apparatus and system including a flexible microsystems enabled microelectronic device package including a microelectronic device positioned on a substrate; an encapsulation layer encapsulating the microelectronic device and the substrate; a protective layer positioned around the encapsulating layer; and a reinforcing layer coupled to the protective layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device. The method including encapsulating a microelectronic device positioned on a substrate within an encapsulation layer; sealing the encapsulated microelectronic device within a protective layer; and coupling themore » protective layer to a reinforcing layer, wherein the substrate, encapsulation layer, protective layer and reinforcing layer form a flexible and optically transparent package around the microelectronic device.« less

Flexible plastic, paper and textile lab-on-a chip platforms for electrochemical biosensing.

PubMed

Economou, Anastasios; Kokkinos, Christos; Prodromidis, Mamas

2018-06-26

Flexible biosensors represent an increasingly important and rapidly developing field of research. Flexible materials offer several advantages as supports of biosensing platforms in terms of flexibility, weight, conformability, portability, cost, disposability and scope for integration. On the other hand, electrochemical detection is perfectly suited to flexible biosensing devices. The present paper reviews the field of integrated electrochemical bionsensors fabricated on flexible materials (plastic, paper and textiles) which are used as functional base substrates. The vast majority of electrochemical flexible lab-on-a-chip (LOC) biosensing devices are based on plastic supports in a single or layered configuration. Among these, wearable devices are perhaps the ones that most vividly demonstrate the utility of the concept of flexible biosensors while diagnostic cards represent the state-of-the art in terms of integration and functionality. Another important type of flexible biosensors utilize paper as a functional support material enabling the fabrication of low-cost and disposable paper-based devices operating on the lateral flow, drop-casting or folding (origami) principles. Finally, textile-based biosensors are beginning to emerge enabling real-time measurements in the working environment or in wound care applications. This review is timely due to the significant advances that have taken place over the last few years in the area of LOC biosensors and aims to direct the readers to emerging trends in this field.

Stability Criteria of Fullerene-like Nanoparticles: Comparing V2O5 to Layered Metal Dichalcogenides and Dihalides

PubMed Central

Levi, Roi; Bar-Sadan, Maya; Albu-Yaron, Ana; Popovitz-Biro, Ronit; Houben, Lothar; Prior, Yehiam; Tenne, Reshef

2010-01-01

Numerous examples of closed-cage nanostructures, such as nested fullerene-like nanoparticles and nanotubes, formed by the folding of materials with layered structure are known. These compounds include WS2, NiCl2, CdCl2, Cs2O, and recently V2O5. Layered materials, whose chemical bonds are highly ionic in character, possess relatively stiff layers, which cannot be evenly folded. Thus, stress-relief generally results in faceted nanostructures seamed by edge-defects. V2O5, is a metal oxide compound with a layered structure. The study of the seams in nearly perfect inorganic "fullerene-like" hollow V2O5 nanoparticles (NIF-V2O5) synthesized by pulsed laser ablation (PLA), is discussed in the present work. The relation between the formation mechanism and the seams between facets is examined. The formation mechanism of the NIF-V2O5 is discussed in comparison to fullerene-like structures of other layered materials, like IF structures of MoS2, CdCl2, and Cs2O. The criteria for the perfect seaming of such hollow closed structures are highlighted. PMID:28883335

Unsplit complex frequency shifted perfectly matched layer for second-order wave equation using auxiliary differential equations.

PubMed

Gao, Yingjie; Zhang, Jinhai; Yao, Zhenxing

2015-12-01

The complex frequency shifted perfectly matched layer (CFS-PML) can improve the absorbing performance of PML for nearly grazing incident waves. However, traditional PML and CFS-PML are based on first-order wave equations; thus, they are not suitable for second-order wave equation. In this paper, an implementation of CFS-PML for second-order wave equation is presented using auxiliary differential equations. This method is free of both convolution calculations and third-order temporal derivatives. As an unsplit CFS-PML, it can reduce the nearly grazing incidence. Numerical experiments show that it has better absorption than typical PML implementations based on second-order wave equation.

Magneto-photonic crystal microcavities based on magnetic nanoparticles embedded in Silica matrix

NASA Astrophysics Data System (ADS)

Hocini, Abdesselam; Moukhtari, Riad; Khedrouche, Djamel; Kahlouche, Ahmed; Zamani, Mehdi

2017-02-01

Using the three-dimensional finite difference time domain method (3D FDTD) with perfectly matched layers (PML), optical and magneto-optical properties of two-dimensional magneto-photonic crystals micro-cavity is studied. This micro-cavity is fabricated by SiO2/ZrO2 or SiO2/TiO2 matrix doped with magnetic nanoparticles, in which the refractive index varied in the range of 1.51-1.58. We demonstrate that the Q factor for the designed cavity increases as the refractive index increases, and we find that the Q factor decreases as the volume fraction VF% due to off-diagonal elements increases. These magnetic microcavities may serve as a fundamental structure in a variety of ultra compact magneto photonic devices such as optical isolators, circulators and modulators in the future.

Sieve-based device for MALDI sample preparation. I. Influence of sample deposition conditions in oligonucleotide analysis to achieve significant increases in both sensitivity and resolution.

PubMed

Molin, Laura; Cristoni, Simone; Crotti, Sara; Bernardi, Luigi Rossi; Seraglia, Roberta; Traldi, Pietro

2008-11-01

Spraying of oligonucleotide-matrix solutions through a stainless steel (ss) sieve (38 microm, 450 mesh) leads to the formation, on the matrix-assisted laser desorption/ionization (MALDI) sample holder, of uniformly distributed microcrystals, well separated from each other. When the resulting sample holder surface is irradiated by laser, abundant molecular species form, with a clear increase in both intensity and resolution with respect to values obtained by 'Dried Droplet', 'Double Layer', and 'Sandwich' deposition methods. In addition, unlike the usual situation, the sample is perfectly homogeneous, and identical spectra are obtained by irradiating different areas. On one hand, the data indicate that this method is highly effective for oligonucleotide MALDI analysis, and on the other, that it can be validly employed for fully automated MALDI procedures.

Coherent perfect rotation theory: connections with, and consequences beyond, the anti-laser

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Andrews, James; Zhou, Chuanhong; Baker, Michael

2014-05-01

Coherent Perfect Rotation (CPR) phenomena are a reversible generalization of the anti-laser. By evaluating CPR in a broad variety of common optical systems, including optical cavities and DFB and DBR structures, we illustrate its unique threshold and resonance features. This study builds intuition critical to assessing the utility of CPR in optical devices, and we detail it in a concrete application.

Non-blind acoustic invisibility by dual layers of homogeneous single-negative media

NASA Astrophysics Data System (ADS)

Gao, He; Zhu, Yi-Fan; Fan, Xu-Dong; Liang, Bin; Yang, Jing; Cheng, Jian-Chun

2017-02-01

Non-blind invisibility cloaks allowing the concealed object to sense the outside world have great application potentials such as in high-precision sensing or underwater camouflage. However the existing designs based on coordinate transformation techniques need complicated spatially-varying negative index or intricate multi-layered configurations, substantially increasing the difficulty in practical realization. Here we report on the non-blind acoustic invisibility for a circular object in free space with simple distribution of cloak parameters. The mechanism is that, instead of utilizing the transformation acoustics technique, we develop the analytical formulae for fast prediction of the scattering from the object and then use an evolutionary optimization to retrieve the desired cloak parameters for minimizing the scattered field. In this way, it is proven possible to break through the fundamental limit of complementary condition that must be satisfied by the effective parameters of the components in transformation acoustics-based cloaks. Numerical results show that the resulting cloak produces a non-bflind invisibility as perfect as in previous designs, but only needs two layers with homogenous single-negative parameters. With full simplification in parameter distribution and broken symmetry in complementary relationship, our scheme opens new route to free-space non-blind invisibility, taking a significant step towards real-world application of cloaking devices.

Non-blind acoustic invisibility by dual layers of homogeneous single-negative media

PubMed Central

Gao, He; Zhu, Yi-fan; Fan, Xu-dong; Liang, Bin; Yang, Jing; Cheng, Jian-Chun

2017-01-01

Non-blind invisibility cloaks allowing the concealed object to sense the outside world have great application potentials such as in high-precision sensing or underwater camouflage. However the existing designs based on coordinate transformation techniques need complicated spatially-varying negative index or intricate multi-layered configurations, substantially increasing the difficulty in practical realization. Here we report on the non-blind acoustic invisibility for a circular object in free space with simple distribution of cloak parameters. The mechanism is that, instead of utilizing the transformation acoustics technique, we develop the analytical formulae for fast prediction of the scattering from the object and then use an evolutionary optimization to retrieve the desired cloak parameters for minimizing the scattered field. In this way, it is proven possible to break through the fundamental limit of complementary condition that must be satisfied by the effective parameters of the components in transformation acoustics-based cloaks. Numerical results show that the resulting cloak produces a non-bflind invisibility as perfect as in previous designs, but only needs two layers with homogenous single-negative parameters. With full simplification in parameter distribution and broken symmetry in complementary relationship, our scheme opens new route to free-space non-blind invisibility, taking a significant step towards real-world application of cloaking devices. PMID:28195227

Kolakoski sequence as an element to radiate giant forward and backward second harmonic signals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parvini, T. S.; Tehranchi, M. M., E-mail: m-hamidi@sbu.ac.ir, E-mail: teranchi@sbu.ac.ir; Laser and Plasma Research Institute, Shahid Beheshti University, Tehran

2015-11-14

We propose a novel type of aperiodic one-dimensional photonic crystal structures which can be used for generating giant forward and backward second harmonic signals. The studied structure is formed by stacking together the air and nonlinear layers according to the Kolakoski self-generation scheme in which each nonlinear layer contains a pair of antiparallel 180° poled LiNbO{sub 3} crystal layers. For different generation stages of the structure, conversion efficiencies of forward and backward second harmonic waves have been calculated by nonlinear transfer matrix method. Numerical simulations show that conversion efficiencies in the Kolakoski-based multilayer are larger than the perfect ones formore » at least one order of magnitude. Especially for 33rd and 39th generation stages, forward second harmonic wave are 42 and 19 times larger, respectively. In this paper, we validate the strong fundamental field enhancement and localization within Kolakoski-based multilayer due to periodicity breaking which consequently leads to very strong radiation of backward and forward second harmonic signals. Following the applications of analogous aperiodic structures, we expect that Kolakosi-based multilayer can play a role in optical parametric devices such as multicolor second harmonic generators with high efficiency.« less

Processes for multi-layer devices utilizing layer transfer

DOEpatents

Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2015-02-03

A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Graphene device and method of using graphene device

DOEpatents

Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

2015-08-11

An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2016-05-10

A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Detection of Apical Root Cracks Using Spectral Domain and Swept-source Optical Coherence Tomography.

PubMed

de Oliveira, Bruna Paloma; Câmara, Andréa Cruz; Duarte, Daniel Amancio; Gomes, Anderson Stevens Leonidas; Heck, Richard John; Antonino, Antonio Celso Dantas; Aguiar, Carlos Menezes

2017-07-01

This study aimed to evaluate the ability of 2 optical coherence tomographic (OCT) systems to detect apical dentinal microcracks. Twenty extracted human single-rooted mandibular incisors were selected. After root canal preparation with an R40 Reciproc file (VDW, Munich, Germany), the specimens presenting apical microcracks were identified using micro-computed tomographic (micro-CT) scanning as the gold standard. Then, the apical portions of the roots were imaged with spectral domain OCT (SD-OCT) and swept-source OCT systems, and the resulting images were blindly evaluated by 3 independent examiners to detect microcracks. The diagnostic performance of each OCT device was calculated, and statistical analysis was performed. Based on the micro-CT images, 12 (60%) roots presented dentinal microcracks in the apical region. The images generated by the OCT systems were able to show microcrack lines at the same location as the corresponding micro-CT cross sections. Although the diagnostic performance of the SD-OCT device was superior, there were no statistically significant differences between the 2 OCT devices (P > .05). Interexaminer agreement was substantial to almost perfect for the SD-OCT system and moderate to almost perfect for the swept-source OCT system, whereas intraexaminer agreement was substantial to almost perfect for both OCT devices. The detection ability verified for both OCT systems renders them promising tools for the diagnosis of apical microcracks. Copyright © 2017 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

A modified and stable version of a perfectly matched layer technique for the 3-d second order wave equation in time domain with an application to aeroacoustics

PubMed Central

Kaltenbacher, Barbara; Kaltenbacher, Manfred; Sim, Imbo

2013-01-01

We consider the second order wave equation in an unbounded domain and propose an advanced perfectly matched layer (PML) technique for its efficient and reliable simulation. In doing so, we concentrate on the time domain case and use the finite-element (FE) method for the space discretization. Our un-split-PML formulation requires four auxiliary variables within the PML region in three space dimensions. For a reduced version (rPML), we present a long time stability proof based on an energy analysis. The numerical case studies and an application example demonstrate the good performance and long time stability of our formulation for treating open domain problems. PMID:23888085

Multiscale real-space quantum-mechanical tight-binding calculations of electronic structure in crystals with defects using perfectly matched layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pourmatin, Hossein, E-mail: mpourmat@andrew.cmu.edu; Dayal, Kaushik, E-mail: kaushik@cmu.edu

2016-10-15

Graphical abstract: - Abstract: We consider the scattering of incident plane-wave electrons from a defect in a crystal modeled by the time-harmonic Schrödinger equation. While the defect potential is localized, the far-field potential is periodic, unlike standard free-space scattering problems. Previous work on the Schrödinger equation has been almost entirely in free-space conditions; a few works on crystals have been in one-dimension. We construct absorbing boundary conditions for this problem using perfectly matched layers in a tight-binding formulation. Using the example of a point defect in graphene, we examine the efficiency and convergence of the proposed absorbing boundary condition.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2014-08-26

A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

III-V semiconductor resonators: A new strategy for broadband light perfect absorbers

NASA Astrophysics Data System (ADS)

Liu, Xiaoshan; Chen, Jian; Liu, Jiasong; Huang, Zhenping; Yu, Meidong; Pan, Pingping; Liu, Zhengqi

2017-11-01

Broadband light perfect absorbers (BPAs) are desirable for applications in numerous optoelectronics devices. In this work, a semiconductor-based broadband light perfect absorber (S-BPA) has been numerically demonstrated by utilizing plasmonlike resonances of high-index semiconductor resonators. A maximal absorption of 99.7% is observed in the near-infrared region. By taking the absorption above 80% into account, the spectral bandwidth reaches 340 nm. The absorption properties mainly originate from the optical cavity modes induced by the cylinder resonators and ultrathin semiconductor film. These optical properties and simple structural features can maintain the absorber platform with wide applications in semiconductor optoelectronics.

Fast process flow, on-wafer interconnection and singulation for MEPV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

2017-01-31

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality ofmore » metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.« less

Fast process flow, on-wafer interconnection and singulation for MEPV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okandan, Murat; Nielson, Gregory N.; Cruz-Campa, Jose Luis

2017-08-29

A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality ofmore » metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.« less

Perfect Circular Dichroism in the Haldane Model

NASA Astrophysics Data System (ADS)

Ghalamkari, Kazu; Tatsumi, Yuki; Saito, Riichiro

2018-06-01

We theoretically show that perfect circular dichroism (CD) occurs in the Haldane model in which the two-dimensional (2D) material absorbs only either left-handed or right-handed circularly polarized light. Perfect CD occurs in the phase diagram of the Haldane model when the zero-field quantum Hall conductivity has a nonzero value. The coincidence of the occurrence of perfect CD and zero-field quantum Hall effect is attributed to the fact that the effect of broken time-reversal symmetry is larger than the effect of broken inversion symmetry. On the other hand, valley polarization and perfect CD occur exclusively in the phase diagram. Further, for the four regions of the phase diagram, pseudospin polarization occurs at the K and K' points in the hexagonal Brillouin zone with either the same sign or opposite sign for the K and K' points and for the valence and conduction bands. This theoretical prediction may have an impact on search for a new optical device that selects circularly polarized light controlled by the electric field.

Innovative nanostructures for highly sensitive vibrational biosensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Popp, Juergen; Mayerhöfer, Thomas; Cialla-May, Dana; Weber, Karina; Huebner, Uwe

2016-03-01

Employing vibrational spectroscopy (IR-absorption and Raman spectroscopy) allows for the labelfree detection of molecular specific fingerprints of inorganic, organic and biological substances. The sensitivity of vibrational spectroscopy can be improved by several orders of magnitude via the application of plasmonic active surfaces. Within this contribution we will discuss two such approaches, namely surface enhanced Raman spectroscopy (SERS) as well as surface enhanced IR absorption (SEIRA). It will be shown that SERS using metal colloids as SERS active substrate in combination with a microfluidic lab-on-a-chip (LOC) device enables high throughput and reproducible measurements with highest sensitivity and specificity. The application of such a LOC-SERS approach for therapeutic drug monitoring (e.g. quantitative detection of antibiotics in a urine matrix) will be presented. Furthermore, we will introduce innovative bottom-up strategies to prepare SERS-active nanostructures coated with a lipophilic sensor layer as one-time use SERS substrates for specific food analysis (e.g. quantitative detection of toxic food colorants). The second part of this contribution presents a slit array metamaterial perfect absorber for IR sensing applications consisting of a dielectric layer sandwiched between two metallic layers of which the upper layer is perforated with a periodic array of slits. Light-matter interaction is greatly amplified in the slits, where also the analyte is concentrated, as the surface of the substrate is covered by a thin silica layer. Thus, already small concentrations of analytes down to a monolayer can be detected by refractive index sensing and identified by their spectral fingerprints with a standard mid-infrared lab spectrometer.

Spherical gradient-index lenses as perfect imaging and maximum power transfer devices.

PubMed

Gordon, J M

2000-08-01

Gradient-index lenses can be viewed from the perspectives of both imaging and nonimaging optics, that is, in terms of both image fidelity and achievable flux concentration. The simple class of gradient-index lenses with spherical symmetry, often referred to as modified Luneburg lenses, is revisited. An alternative derivation for established solutions is offered; the method of Fermat's strings and the principle of skewness conservation are invoked. Then these nominally perfect imaging devices are examined from the additional vantage point of power transfer, and the degree to which they realize the thermodynamic limit to flux concentration is determined. Finally, the spherical gradient-index lens of the fish eye is considered as a modified Luneburg lens optimized subject to material constraints.

Single mask, simple structure micro rotational motor driven by electrostatic comb-drive actuators

NASA Astrophysics Data System (ADS)

Pham, Phuc Hong; Viet Dao, Dzung; Dang, Lam Bao; Sugiyama, Susumu

2012-01-01

We report a design and fabrication of a new micro rotational motor (MRM) using silicon micromachining technology with the overall diameter of 2.4 mm. This motor utilizes four silicon electrostatic comb-drive actuators to drive the outer ring (or rotor) through ratchet teeth. The novel design of the anti-reverse structure helps us to overcome the gap problem after deep reactive ion etching of silicon. The MRM was fabricated by using silicon on insulator wafer with the thickness of the device layer being 30 µm and one mask only. The motor was successfully tested for performance. It was driven by periodic voltage with different frequencies ranging from 1 to 50 Hz. The angular velocity of the outer ratchet ring was proportional to the frequency. Moreover, when the driving frequency is lower than 30 Hz, the experiment results perfectly match the theoretical calculation.

Release strategies for making transferable semiconductor structures, devices and device components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew

2016-05-24

Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films

PubMed Central

Kim, Tae Young; Badsha, Md. Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

2016-01-01

We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices. PMID:26965195

Bilateral, Misalignment-Compensating, Full-DOF Hip Exoskeleton: Design and Kinematic Validation

PubMed Central

Degelaen, Marc; Lefeber, Nina; Swinnen, Eva; Vanderborght, Bram; Lefeber, Dirk

2017-01-01

A shared design goal for most robotic lower limb exoskeletons is to reduce the metabolic cost of locomotion for the user. Despite this, only a limited amount of devices was able to actually reduce user metabolic consumption. Preservation of the natural motion kinematics was defined as an important requirement for a device to be metabolically beneficial. This requires the inclusion of all human degrees of freedom (DOF) in a design, as well as perfect alignment of the rotation axes. As perfect alignment is impossible, compensation for misalignment effects should be provided. A misalignment compensation mechanism for a 3-DOF system is presented in this paper. It is validated by the implementation in a bilateral hip exoskeleton, resulting in a compact and lightweight device that can be donned fast and autonomously, with a minimum of required adaptations. Extensive testing of the prototype has shown that hip range of motion of the user is maintained while wearing the device and this for all three hip DOFs. This allowed the users to maintain their natural motion patterns when they are walking with the novel hip exoskeleton. PMID:28790799

Research on liquid impact forming technology of double-layered tubes

NASA Astrophysics Data System (ADS)

Sun, Changying; Liu, Jianwei; Yao, Xinqi; Huang, Beixing; Li, Yuhan

2018-03-01

A double-layered tube is widely used and developed in various fields because of its perfect comprehensive performance and design. With the advent of the era of a double-layered tube, the requirements for double layered tube forming quality, manufacturing cost and forming efficiency are getting higher, so forming methods of a double-layered tube are emerged in an endless stream, the forming methods of a double-layered tube have a great potential in the future. The liquid impact forming technology is a combination of stamping technology and hydroforming technology. Forming a double-layered tube has huge advantages in production cost, quality and efficiency.

The polarization modulation and fabrication method of two dimensional silica photonic crystals based on UV nanoimprint lithography and hot imprint

PubMed Central

Guo, Shuai; Niu, Chunhui; Liang, Liang; Chai, Ke; Jia, Yaqing; Zhao, Fangyin; Li, Ya; Zou, Bingsuo; Liu, Ruibin

2016-01-01

Based on a silica sol-gel technique, highly-structurally ordered silica photonic structures were fabricated by UV lithography and hot manual nanoimprint efforts, which makes large-scale fabrication of silica photonic crystals easy and results in low-cost. These photonic structures show perfect periodicity, smooth and flat surfaces and consistent aspect ratios, which are checked by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, glass substrates with imprinted photonic nanostructures show good diffraction performance in both transmission and reflection mode. Furthermore, the reflection efficiency can be enhanced by 5 nm Au nanoparticle coating, which does not affect the original imprint structure. Also the refractive index and dielectric constant of the imprinted silica is close to that of the dielectric layer in nanodevices. In addition, the polarization characteristics of the reflected light can be modulated by stripe nanostructures through changing the incident light angle. The experimental findings match with theoretical results, making silica photonic nanostructures functional integration layers in many optical or optoelectronic devices, such as LED and microlasers to enhance the optical performance and modulate polarization properties in an economical and large-scale way. PMID:27698465

Ultrasmooth, Polydopamine Modified Surfaces for Block Copolymer Nanopatterning on Inert and Flexible Substrates

NASA Astrophysics Data System (ADS)

Katsumata, Reika; Cho, Joon Hee; Zhou, Sunshine; Kim, Chae Bin; Dulaney, Austin; Janes, Dustin; Ellison, Christopher

Nature has engineered universal, catechol-containing adhesives that can be synthetically mimicked in the form of polydopamine (PDA). We exploited PDA to enable block copolymer (BCP) nanopatterning on a variety of soft material surfaces in a way that can potentially be applied to flexible electrical devices. Applying BCP nanopatterning to soft substrates is challenging because soft substrates are often chemically inert and possess incompatible low surface energies. In this study, we exploited PDA to enable the formation of BCP nanopatterns on a variety of surfaces such as Teflon, poly(ethylene terephthalate) (PET), and Kapton. While previous studies produced a PDA coating layer too rough for BCP nanopatterning, we succeeded in fabricating conformal and ultra-smooth surfaces of PDA by engineering the PDA coating process and post-sonication procedure. This chemically functionalized, biomimetic thin film (3 nm thick) served as a reactive platform for subsequently grafting a surface treatment to perpendicularly orient a lamellae-forming BCP layer. Furthermore, we demonstrated that a perfectly nanopatterned PDA-PET substrate can be bent without distorting or damaging the nanopattern in conditions that far exceeds typical bending curvatures in roll-to-roll manufacturing.

The polarization modulation and fabrication method of two dimensional silica photonic crystals based on UV nanoimprint lithography and hot imprint.

PubMed

Guo, Shuai; Niu, Chunhui; Liang, Liang; Chai, Ke; Jia, Yaqing; Zhao, Fangyin; Li, Ya; Zou, Bingsuo; Liu, Ruibin

2016-10-04

Based on a silica sol-gel technique, highly-structurally ordered silica photonic structures were fabricated by UV lithography and hot manual nanoimprint efforts, which makes large-scale fabrication of silica photonic crystals easy and results in low-cost. These photonic structures show perfect periodicity, smooth and flat surfaces and consistent aspect ratios, which are checked by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, glass substrates with imprinted photonic nanostructures show good diffraction performance in both transmission and reflection mode. Furthermore, the reflection efficiency can be enhanced by 5 nm Au nanoparticle coating, which does not affect the original imprint structure. Also the refractive index and dielectric constant of the imprinted silica is close to that of the dielectric layer in nanodevices. In addition, the polarization characteristics of the reflected light can be modulated by stripe nanostructures through changing the incident light angle. The experimental findings match with theoretical results, making silica photonic nanostructures functional integration layers in many optical or optoelectronic devices, such as LED and microlasers to enhance the optical performance and modulate polarization properties in an economical and large-scale way.

AUDIS wear: a smartwatch based assistive device for ubiquitous awareness of environmental sounds.

PubMed

Mielke, Matthias; Bruck, Rainer

2016-08-01

A multitude of assistive devices is available for deaf people (i.e. deaf, deafened, and hard of hearing). Besides hearing and communication aids, devices to access environmental sounds are available commercially. But the devices have two major drawbacks: 1. they are targeted at indoor environments (e.g. home or work), and 2. only specific events are supported (e.g. the doorbell or telephone). Recent research shows that important sounds can occur in all contexts and that the interests in sounds are diverse. These drawbacks can be tackled by using modern information and communication technology that enables the development of new and improved assistive devices. The smartwatch, a new computing platform in the form of a wristwatch, offers new potential for assistive technology. Its design promises a perfect integration into various different social contexts and thus blends perfectly into the user's life. Based on a smartwatch and algorithms from pattern recognition, a prototype for awareness of environmental sounds is presented here. It observes the acoustic environment of the user and detects environmental sounds. A vibration is triggered when a sound is detected and the type of sound is shown on the display. The design of the prototype was discussed with deaf people in semi-structured interviews, leading to a set of implications for the design of such a device.

Perfectly Matched Layer for Linearized Euler Equations in Open and Ducted Domains

NASA Technical Reports Server (NTRS)

Tam, Christopher K. W.; Auriault, Laurent; Cambuli, Francesco

1998-01-01

Recently, perfectly matched layer (PML) as an absorbing boundary condition has widespread applications. The idea was first introduced by Berenger for electromagnetic waves computations. In this paper, it is shown that the PML equations for the linearized Euler equations support unstable solutions when the mean flow has a component normal to the layer. To suppress such unstable solutions so as to render the PML concept useful for this class of problems, it is proposed that artificial selective damping terms be added to the discretized PML equations. It is demonstrated that with a proper choice of artificial mesh Reynolds number, the PML equations can be made stable. Numerical examples are provided to illustrate that the stabilized PML performs well as an absorbing boundary condition. In a ducted environment, the wave mode are dispersive. It will be shown that the group velocity and phase velocity of these modes can have opposite signs. This results in a confined environment, PML may not be suitable as an absorbing boundary condition.

Engineering the Complex-Valued Constitutive Parameters of Metamaterials for Perfect Absorption

NASA Astrophysics Data System (ADS)

Wang, Pengwei; Chen, Naibo; Tang, Chaojun; Chen, Jing; Liu, Fanxin; Sheng, Saiqian; Yan, Bo; Sui, Chenghua

2017-04-01

We theoretically studied how to directly engineer the constitutive parameters of metamaterials for perfect absorbers of electromagnetic waves. As an example, we numerically investigated the necessary refractive index n and extinction coefficient k and the relative permittivity ɛ and permeability μ of a metamaterial anti-reflection layer, which could cancel the reflection from a hydrogenated amorphous silicon (α-Si:H) thin film on a metal substrate, within the visible wavelength range from 300 to 800 nm. We found that the metamaterial anti-reflection layer should have a negative refractive index ( n < 0) for short-wavelength visible light but have a positive refractive index ( n > 0) for long-wavelength visible light. The relative permittivity ɛ and permeability μ could be fitted by the Lorentz model, which exhibited electric and magnetic resonances, respectively.

Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

NASA Astrophysics Data System (ADS)

Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

2017-11-01

Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

Superhydrophobic and Slippery Lubricant-Infused Flexible Transparent Nanocellulose Films by Photoinduced Thiol-Ene Functionalization.

PubMed

Guo, Jiaqi; Fang, Wenwen; Welle, Alexander; Feng, Wenqian; Filpponen, Ilari; Rojas, Orlando J; Levkin, Pavel A

2016-12-14

Films comprising nanofibrillated cellulose (NFC) are suitable substrates for flexible devices in analytical, sensor, diagnostic, and display technologies. However, some major challenges in such developments include their high moisture sensitivity and the complexity of current methods available for functionalization and patterning. In this work, we present a facile process for tailoring the surface wettability and functionality of NFC films by a fast and versatile approach. First, the NFC films were coated with a layer of reactive nanoporous silicone nanofilament by polycondensation of trichlorovinylsilane (TCVS). The TCVS afforded reactive vinyl groups, thereby enabling simple UV-induced functionalization of NFC films with various thiol-containing molecules via the photo "click" thiol-ene reaction. Modification with perfluoroalkyl thiols resulted in robust superhydrophobic surfaces, which could then be further transformed into transparent slippery lubricant-infused NFC films that displayed repellency against both aqueous and organic liquids with surface tensions as low as 18 mN·m -1 . Finally, transparent and flexible NFC films incorporated hydrophilic micropatterns by modification with OH, NH 2 , or COOH surface groups, enabling space-resolved superhydrophobic-hydrophilic domains. Flexibility, transparency, patternability, and perfect superhydrophobicity of the produced nanocellulose substrates warrants their application in biosensing, display protection, and biomedical and diagnostics devices.

Diffusive-light invisibility cloak for transient illumination

NASA Astrophysics Data System (ADS)

Orazbayev, B.; Beruete, M.; Martínez, A.; García-Meca, C.

2016-12-01

Invisibility in a diffusive-light-scattering medium has been recently demonstrated by employing a scattering-cancellation core-shell cloak. Unlike nondiffusive cloaks, such a device can be simultaneously macroscopic, broadband, passive, polarization independent, and omnidirectional. Unfortunately, it has been verified that this cloak, as well as more sophisticated ones based on transformation optics, fail under pulsed illumination, invalidating their use for a variety of applications. Here, we introduce a different approach based on unimodular transformations that enables the construction of unidirectional diffusive-light cloaks exhibiting a perfect invisibility effect, even under transient conditions. Moreover, we demonstrate that a polygonal cloak can extend this functionality to multiple directions with a nearly ideal behavior, while preserving all other features. We propose and numerically verify a simple cloak realization based on a layered stack of two isotropic materials. The studied devices have several applications not addressable by any of the other cloaks proposed to date, including shielding from pulse-based detection techniques, cloaking undesired scattering elements in time-of-flight imaging or high-speed communication systems for diffusive environments, and building extreme optical security features. The discussed cloaking strategy could also be applied to simplify the implementation of thermal cloaks.

Design of dual-diameter nanoholes for efficient solar-light harvesting

PubMed Central

2014-01-01

A dual-diameter nanohole (DNH) photovoltaic system is proposed, where a top (bottom) layer with large (small) nanoholes is used to improve the absorption for the short-wavelength (long-wavelength) solar incidence, leading to a broadband light absorption enhancement. Through three-dimensional finite-element simulation, the core device parameters, including the lattice constant, nanohole diameters, and nanohole depths, are engineered in order to realize the best light-matter coupling between nanostructured silicon and solar spectrum. The designed bare DNH system exhibits an outstanding absorption capability with a photocurrent density (under perfect internal quantum process) predicted to be 27.93 mA/cm2, which is 17.39%, 26.17%, and over 100% higher than the best single-nanohole (SNH) system, SNH system with an identical Si volume, and equivalent planar configuration, respectively. Considering the fabrication feasibility, a modified DNH system with an anti-reflection coating and back silver reflector is examined by simulating both optical absorption and carrier transport in a coupled way in frequency and three-dimensional spatial domains, achieving a light-conversion efficiency of 13.72%. PACS 85.60.-q; Optoelectronic device; 84.60.Jt; Photovoltaic conversion PMID:25258605

Absorption, Transmission and Amplification in a Double-Cavity Optomechanical System with Coulomb-Interaction

NASA Astrophysics Data System (ADS)

Geng, H.; Liu, H. D.

2018-04-01

We explore three interesting phenomena in a double-cavity optomechanical system: coherent perfect absorption, coherent perfect transmission and output signal amplification, and find that these phenomena can be realized and controlled by the coulomb-interaction between the dissipative oscillator locates in the cavity and the gain oscillator locates outside. They originate from the efficient hybrid coupling of optical and mechanical modes, and can be used for realizing novel photonic devices in quantum information networks.

Disordered Nanohole Patterns in Metal-Insulator Multilayer for Ultra-broadband Light Absorption: Atomic Layer Deposition for Lithography Free Highly repeatable Large Scale Multilayer Growth.

PubMed

Ghobadi, Amir; Hajian, Hodjat; Dereshgi, Sina Abedini; Bozok, Berkay; Butun, Bayram; Ozbay, Ekmel

2017-11-08

In this paper, we demonstrate a facile, lithography free, and large scale compatible fabrication route to synthesize an ultra-broadband wide angle perfect absorber based on metal-insulator-metal-insulator (MIMI) stack design. We first conduct a simulation and theoretical modeling approach to study the impact of different geometries in overall stack absorption. Then, a Pt-Al 2 O 3 multilayer is fabricated using a single atomic layer deposition (ALD) step that offers high repeatability and simplicity in the fabrication step. In the best case, we get an absorption bandwidth (BW) of 600 nm covering a range of 400 nm-1000 nm. A substantial improvement in the absorption BW is attained by incorporating a plasmonic design into the middle Pt layer. Our characterization results demonstrate that the best configuration can have absorption over 0.9 covering a wavelength span of 400 nm-1490 nm with a BW that is 1.8 times broader compared to that of planar design. On the other side, the proposed structure retains its absorption high at angles as wide as 70°. The results presented here can serve as a beacon for future performance enhanced multilayer designs where a simple fabrication step can boost the overall device response without changing its overall thickness and fabrication simplicity.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

An approximate viscous shock layer technique for calculating chemically reacting hypersonic flows about blunt-nosed bodies

NASA Technical Reports Server (NTRS)

Cheatwood, F. Mcneil; Dejarnette, Fred R.

1991-01-01

An approximate axisymmetric method was developed which can reliably calculate fully viscous hypersonic flows over blunt nosed bodies. By substituting Maslen's second order pressure expression for the normal momentum equation, a simplified form of the viscous shock layer (VSL) equations is obtained. This approach can solve both the subsonic and supersonic regions of the shock layer without a starting solution for the shock shape. The approach is applicable to perfect gas, equilibrium, and nonequilibrium flowfields. Since the method is fully viscous, the problems associated with a boundary layer solution with an inviscid layer solution are avoided. This procedure is significantly faster than the parabolized Navier-Stokes (PNS) or VSL solvers and would be useful in a preliminary design environment. Problems associated with a previously developed approximate VSL technique are addressed before extending the method to nonequilibrium calculations. Perfect gas (laminar and turbulent), equilibrium, and nonequilibrium solutions were generated for airflows over several analytic body shapes. Surface heat transfer, skin friction, and pressure predictions are comparable to VSL results. In addition, computed heating rates are in good agreement with experimental data. The present technique generates its own shock shape as part of its solution, and therefore could be used to provide more accurate initial shock shapes for higher order procedures which require starting solutions.

A three-dimensional, compressible, laminar boundary-layer method for general fuselages. Volume 2: User's manual

NASA Technical Reports Server (NTRS)

Wie, Yong-Sun

1990-01-01

This user's manual contains a complete description of the computer programs developed to calculate three-dimensional, compressible, laminar boundary layers for perfect gas flow on general fuselage shapes. These programs include the 3-D boundary layer program (3DBLC), the body-oriented coordinate program (BCC), and the streamline coordinate program (SCC). Subroutine description, input, output and sample case are discussed. The complete FORTRAN listings of the computer programs are given.

Structural defects in GaN revealed by Transmission Electron Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liliental-Weber, Zuzanna

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Structural defects in GaN revealed by Transmission Electron Microscopy

DOE PAGES

Liliental-Weber, Zuzanna

2014-09-08

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

High-order integral equation methods for problems of scattering by bumps and cavities on half-planes.

PubMed

Pérez-Arancibia, Carlos; Bruno, Oscar P

2014-08-01

This paper presents high-order integral equation methods for the evaluation of electromagnetic wave scattering by dielectric bumps and dielectric cavities on perfectly conducting or dielectric half-planes. In detail, the algorithms introduced in this paper apply to eight classical scattering problems, namely, scattering by a dielectric bump on a perfectly conducting or a dielectric half-plane, and scattering by a filled, overfilled, or void dielectric cavity on a perfectly conducting or a dielectric half-plane. In all cases field representations based on single-layer potentials for appropriately chosen Green functions are used. The numerical far fields and near fields exhibit excellent convergence as discretizations are refined-even at and around points where singular fields and infinite currents exist.

High efficiency photovoltaic device

DOEpatents

Guha, Subhendu; Yang, Chi C.; Xu, Xi Xiang

1999-11-02

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Economic analysis of crystal growth in space

NASA Technical Reports Server (NTRS)

Ulrich, D. R.; Chung, A. M.; Yan, C. S.; Mccreight, L. R.

1972-01-01

Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound single crystals, i.e. ceramic oxides and compound semiconductors. Space processing of these electronic crystals with maximum perfection, purity, and size is suggested. No ecomonic or technical justification was found for the growth of silicon single crystals for solid state electronic devices in space.

Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Aubin, J.

2018-04-01

Thick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers, as templates for the epitaxy of III-V and GeSn-based heterostructures and so on. Perfecting their crystalline quality would enable to fabricate suspended Ge micro-bridges with extremely high levels of tensile strain (for mid IR lasers). In this study, we have used a low temperature (400 °C)/high temperature (750 °C) approach to deposit with GeH4 various thickness Ge layers in the 0.5 μm - 5 μm range. They were submitted afterwards to short duration thermal cycling under H2 (in between 750 °C and 875-890 °C) to lower the Threading Dislocation Density (TDD). Some of the thickest layers were partly etched at 750 °C with gaseous HCl to recover wafer bows compatible with device processing later on. X-ray Diffraction (XRD) showed that the layers were slightly tensile-strained, with a 104.5-105.5% degree of strain relaxation irrespective of the thickness. The surface was cross-hatched, with a roughness slightly decreasing with the thickness, from 2.0 down to 0.8 nm. The TDD (from Omega scans in XRD) decreased from 8 × 107 cm-2 down to 107 cm-2 as the Ge layer thickness increased from 0.5 up to 5 μm. The lack of improvement when growing 5 μm thick layers then etching a fraction of them with HCl over same thickness layers grown in a single run was at variance with Thin Solid Films 520, 3216 (2012). Low temperature HCl defect decoration confirmed those findings, with (i) a TDD decreasing from slightly more 107 cm-2 down to 5 × 106 cm-2 as the Ge layer thickness increased from 1.3 up to 5 μm and (ii) no TDD hysteresis between growth and growth then HCl etch-back.

Strong coupling of plasmon and nanocavity modes for dual-band, near-perfect absorbers and ultrathin photovoltaics

DOE PAGES

Hagglund, Carl; Zeltzer, Gabriel; Ruiz, Ricardo; ...

2016-01-29

In this study, when optical resonances interact strongly, hybridized modes are formed with mixed properties inherited from the basic modes. Strong coupling therefore tends to equalize properties such as damping and oscillator strength of the spectrally separate resonance modes. This effect is here shown to be very useful for the realization of near-perfect dual-band absorption with ultrathin (~10 nm) layers in a simple geometry. Absorber layers are constructed by atomic layer deposition of the heavy-damping semiconductor tin monosulfide (SnS) onto a two-dimensional gold nanodot array. In combination with a thin (55 nm) SiO 2 spacer layer and a highly reflectivemore » Al film on the back, a semiopen nanocavity is formed. The SnS-coated array supports a localized surface plasmon resonance in the vicinity of the lowest order antisymmetric Fabry–Perot resonance of the nanocavity. Very strong coupling of the two resonances is evident through anticrossing behavior with a minimum peak splitting of 400 meV, amounting to 24% of the plasmon resonance energy. The mode equalization resulting from this strong interaction enables simultaneous optical impedance matching of the system at both resonances and thereby two near-perfect absorption peaks, which together cover a broad spectral range. When paired with the heavy damping from SnS band-to-band transitions, this further enables approximately 60% of normal incident solar photons with energies exceeding the band gap to be absorbed in the 10 nm SnS coating. Thereby, these results establish a distinct relevance of strong coupling phenomena to efficient, nanoscale photovoltaic absorbers and more generally for fulfilling a specific optical condition at multiple spectral positions.« less

Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

NASA Astrophysics Data System (ADS)

Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

2016-05-01

Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

One-way quasiplanar terahertz absorbers using nonstructured polar dielectric layers

NASA Astrophysics Data System (ADS)

Rodríguez-Ulibarri, P.; Beruete, M.; Serebryannikov, A. E.

2017-10-01

A concept of quasiplanar one-way transparent terahertz absorbers made of linear isotropic materials is presented. The resulting structure consists of a homogeneous absorbing layer of polar dielectric, GaAs, a dispersion-free substrate, and an ultrathin frequency-selective reflector. It is demonstrated that perfect absorption can be obtained for forward illumination, along with total reflection at backward illumination and transparency windows in the adjacent bands. The design is particularized for the polaritonic gap range where permittivity of GaAs varies in a wide range and includes epsilon-near-zero and transparency regimes. The underlying physics can be explained with the aid of a unified equivalent-circuit (EC) analytical model. Perfect matching of input impedance in forward operation and, simultaneously, strong mismatch in the backward case are the universal criteria of one-way absorption. It is shown that perfect one-way absorption can be achieved at rather arbitrary permittivity values, provided these criteria are fulfilled. The EC results are in good agreement with full-wave simulations in a wide range of material and geometrical parameters. The resulting one-way absorbers are very compact and geometrically simple, and enable transparency in the neighboring frequency ranges and, hence, multifunctionality that utilizes both absorption- and transmission-related regimes.

Physical-layer security analysis of PSK quantum-noise randomized cipher in optically amplified links

NASA Astrophysics Data System (ADS)

Jiao, Haisong; Pu, Tao; Xiang, Peng; Zheng, Jilin; Fang, Tao; Zhu, Huatao

2017-08-01

The quantitative security of quantum-noise randomized cipher (QNRC) in optically amplified links is analyzed from the perspective of physical-layer advantage. Establishing the wire-tap channel models for both key and data, we derive the general expressions of secrecy capacities for the key against ciphertext-only attack and known-plaintext attack, and that for the data, which serve as the basic performance metrics. Further, the maximal achievable secrecy rate of the system is proposed, under which secrecy of both the key and data is guaranteed. Based on the same framework, the secrecy capacities of various cases can be assessed and compared. The results indicate perfect secrecy is potentially achievable for data transmission, and an elementary principle of setting proper number of photons and bases is given to ensure the maximal data secrecy capacity. But the key security is asymptotically perfect, which tends to be the main constraint of systemic maximal secrecy rate. Moreover, by adopting cascaded optical amplification, QNRC can realize long-haul transmission with secure rate up to Gb/s, which is orders of magnitude higher than the perfect secrecy rates of other encryption systems.

Design and Navier-Stokes analysis of hypersonic wind tunnel nozzles. M.S. Thesis

NASA Technical Reports Server (NTRS)

Benton, James R.

1989-01-01

Four hypersonic wind tunnel nozzles ranging in Mach number from 6 to 17 are designed with the method of characteristics and boundary layer approach (MOC/BL) and analyzed with a Navier-Stokes solver. Limitations of the MOC/BL approach when applied to thick high speed boundary layers with non-zero normal pressure gradients are investigated. Working gases include ideal air, thermally perfect nitrogen and virial CF4. Agreement between the design conditions and Navier-Stokes solutions for ideal air at Mach 6 is good. Thermally perfect nitrogen showed poor agreement at Mach 13.5 and Mach 17. Navier-Stokes solutions for CF4 are not obtained, but comparison of the effects of low gamma to those of high Mach number suggests that the Navier-Stokes solution would not compare well with design.

Anomalous double-stripe charge ordering in β -NaFe2O3 with double triangular layers consisting of almost perfect regular Fe4 tetrahedra

NASA Astrophysics Data System (ADS)

Kobayashi, Shintaro; Ueda, Hiroaki; Michioka, Chishiro; Yoshimura, Kazuyoshi; Nakamura, Shin; Katsufuji, Takuro; Sawa, Hiroshi

2018-05-01

The physical properties of the mixed-valent iron oxide β -NaFe2O3 were investigated by means of synchrotron radiation x-ray diffraction, magnetization, electrical resistivity, differential scanning calorimetry, 23Na NMR, and 57FeM o ̈ssbauer measurements. This compound has double triangular layers consisting of almost perfect regular Fe4 tetrahedra, which suggests geometrical frustration. We found that this compound exhibits an electrostatically unstable double-stripe-type charge ordering, which is stabilized by the cooperative compression of Fe3 +O6 octahedra, owing to a valence change and Fe2 +O6 octahedra due to Jahn-Teller distortion. Our results indicate the importance of electron-phonon coupling for charge ordering in the region of strong charge frustration.

The transmission or scattering of elastic waves by an inhomogeneity of simple geometry: A comparison of theories

NASA Technical Reports Server (NTRS)

Sheu, Y. C.; Fu, L. S.

1982-01-01

The extended method of equivalent inclusion developed is applied to study the specific wave problems of the transmission of elastic waves in an infinite medium containing a layer of inhomogeneity, and of the scattering of elastic waves in an infinite medium containing a perfect spherical inhomogeneity. The eigenstrains are expanded as a geometric series and the method of integration for the inhomogeneous Helmholtz operator given by Fu and Mura is adopted. The results obtained by using a limited number of terms in the eigenstrain expansion are compared with exact solutions for the layer problem and for a perfect sphere. Two parameters are singled out for this comparison: the ratio of elastic moduli, and the ratio of the mass densities. General trends for three different situations are shown.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A [Champaign, IL; Nuzzo, Ralph G [Champaign, IL; Meitl, Matthew [Raleigh, NC; Ko, Heung Cho [Urbana, IL; Yoon, Jongseung [Urbana, IL; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL

2011-04-26

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Efficient Scheme for Perfect Collective Einstein-Podolsky-Rosen Steering

PubMed Central

Wang, M.; Gong, Q. H.; Ficek, Z.; He, Q. Y.

2015-01-01

A practical scheme for the demonstration of perfect one-sided device-independent quantum secret sharing is proposed. The scheme involves a three-mode optomechanical system in which a pair of independent cavity modes is driven by short laser pulses and interact with a movable mirror. We demonstrate that by tuning the laser frequency to the blue (anti-Stokes) sideband of the average frequency of the cavity modes, the modes become mutually coherent and then may collectively steer the mirror mode to a perfect Einstein-Podolsky-Rosen state. The scheme is shown to be experimentally feasible, it is robust against the frequency difference between the modes, mechanical thermal noise and damping, and coupling strengths of the cavity modes to the mirror. PMID:26212901

Reliability of a novel thermal imaging system for temperature assessment of healthy feet.

PubMed

Petrova, N L; Whittam, A; MacDonald, A; Ainarkar, S; Donaldson, A N; Bevans, J; Allen, J; Plassmann, P; Kluwe, B; Ring, F; Rogers, L; Simpson, R; Machin, G; Edmonds, M E

2018-01-01

Thermal imaging is a useful modality for identifying preulcerative lesions ("hot spots") in diabetic foot patients. Despite its recognised potential, at present, there is no readily available instrument for routine podiatric assessment of patients at risk. To address this need, a novel thermal imaging system was recently developed. This paper reports the reliability of this device for temperature assessment of healthy feet. Plantar skin foot temperatures were measured with the novel thermal imaging device (Diabetic Foot Ulcer Prevention System (DFUPS), constructed by Photometrix Imaging Ltd) and also with a hand-held infrared spot thermometer (Thermofocus® 01500A3, Tecnimed, Italy) after 20 min of barefoot resting with legs supported and extended in 105 subjects (52 males and 53 females; age range 18 to 69 years) as part of a multicentre clinical trial. The temperature differences between the right and left foot at five regions of interest (ROIs), including 1st and 4th toes, 1st, 3rd and 5th metatarsal heads were calculated. The intra-instrument agreement (three repeated measures) and the inter-instrument agreement (hand-held thermometer and thermal imaging device) were quantified using intra-class correlation coefficients (ICCs) and the 95% confidence intervals (CI). Both devices showed almost perfect agreement in replication by instrument. The intra-instrument ICCs for the thermal imaging device at all five ROIs ranged from 0.95 to 0.97 and the intra-instrument ICCs for the hand-held-thermometer ranged from 0.94 to 0.97. There was substantial to perfect inter-instrument agreement between the hand-held thermometer and the thermal imaging device and the ICCs at all five ROIs ranged between 0.94 and 0.97. This study reports the performance of a novel thermal imaging device in the assessment of foot temperatures in healthy volunteers in comparison with a hand-held infrared thermometer. The newly developed thermal imaging device showed very good agreement in repeated temperature assessments at defined ROIs as well as substantial to perfect agreement in temperature assessment with the hand-held infrared thermometer. In addition to the reported non-inferior performance in temperature assessment, the thermal imaging device holds the potential to provide an instantaneous thermal image of all sites of the feet (plantar, dorsal, lateral and medial views). Diabetic Foot Ulcer Prevention System NCT02317835, registered December 10, 2014.

Multilayer Microfluidic Devices Created From A Single Photomask

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kelly, Ryan T.; Sheen, Allison M.; Jambovane, Sachin R.

2013-08-28

The time and expense associated with high quality photomask production can discourage the creation of multilayer microfluidic devices, as each layer currently requires a separate photomask. Here we describe an approach in which multilayer microfabricated devices can be created from a single photomask. The separate layers and their corresponding alignment marks are arranged in separate halves of the mask for two layer devices or quadrants for four layer devices. Selective exposure of the photomask features and rotation of the device substrate between exposures result in multiple copies of the devices on each wafer. Subsequent layers are aligned to patterned featuresmore » on the substrate with the same alignment accuracy as when multiple photomasks are used. We demonstrate this approach for fabricating devices employing multilayer soft lithography (MSL) for pneumatic valving. MSL devices containing as many as 5 layers (4 aligned fluidic layers plus a manually aligned control layer) were successfully created using this approach. Device design is also modularized, enabling the presence or absence of features as well as channel heights to be selected independently from one another. The use of a single photomask to create multilayer devices results in a dramatic savings of time and/or money required to advance from device design to completed prototype.« less

The atomic level structure of the TiO(2)-NiTi interface.

PubMed

Nolan, M; Tofail, S A M

2010-09-07

The biocompatibility of NiTi shape memory alloys (SMA) has made possible applications in invasive and minimally invasive biomedical devices. The NiTi intermetallic alloy spontaneously forms a thin passive layer of TiO(2), which provides its biocompatibility. The oxide layer is thought to form as Ti in the alloy reacts with oxygen. In this paper, we study the details of the oxide-alloy interface. The atomic model is the (110) NiTi surface interfaced with the (100) rutile TiO(2) surface; this combination provides the best lattice match of alloy and oxide. When the interface forms, static minimisations and molecular dynamics show that there is no migration of atoms between the alloy and the oxide. In the alloy there are some notable structural relaxations. We find that a columnar structure appears in which alternating long and short Ni-Ti bonds are present in each surface and subsurface plane into the fourth subsurface layer. The oxide undergoes some structural changes as a result of terminal oxygen coordinating to Ti in the NiTi surface. The electronic structure shows that Ti(3+) species are present at the interface, with Ti(4+) in the bulk of the oxide layer and that the metallic character of the alloy is unaffected by the interaction with oxygen, all of which is consistent with experiment. A thermodynamic analysis is used to examine the stability of different possible structures-a perfect interface and one with Ti and O vacancies. We find that under conditions typical of oxidation and shape memory treatments, the most stable interface structure is that with Ti vacancies in the alloy surface, leaving an Ni-rich layer, consistent with the experimental findings for this interface.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Electrostatic polymer-based microdeformable mirror for adaptive optics

NASA Astrophysics Data System (ADS)

Zamkotsian, Frederic; Conedera, Veronique; Granier, Hugues; Liotard, Arnaud; Lanzoni, Patrick; Salvagnac, Ludovic; Fabre, Norbert; Camon, Henri

2007-02-01

Future adaptive optics (AO) systems require deformable mirrors with very challenging parameters, up to 250 000 actuators and inter-actuator spacing around 500 μm. MOEMS-based devices are promising for the development of a complete generation of new deformable mirrors. Our micro-deformable mirror (MDM) is based on an array of electrostatic actuators with attachments to a continuous mirror on top. The originality of our approach lies in the elaboration of layers made of polymer materials. Mirror layers and active actuators have been demonstrated. Based on the design of this actuator and our polymer process, realization of a complete polymer-MDM has been done using two process flows: the first involves exclusively polymer materials while the second uses SU8 polymer for structural layers and SiO II and sol-gel for sacrificial layers. The latest shows a better capability in order to produce completely released structures. The electrostatic force provides a non-linear actuation, while AO systems are based on linear matrices operations. Then, we have developed a dedicated 14-bit electronics in order to "linearize" the actuation, using a calibration and a sixth-order polynomial fitting strategy. The response is nearly perfect over our 3×3 MDM prototype with a standard deviation of 3.5 nm; the influence function of the central actuator has been measured. First evaluation on the cross non-linarities has also been studied on OKO mirror and a simple look-up table is sufficient for determining the location of each actuator whatever the locations of the neighbor actuators. Electrostatic MDM are particularly well suited for open-loop AO applications.

[Study on the reform and improvement of the medical device registration system in China].

PubMed

Wang, Lanming

2012-11-01

Based on the theories of the Government Regulation and Administrative Licensure, aiming at the current situations of medical device registration system in China, some policy suggestions for future reform and improvement were provided as follows. (1) change the concepts of medical device registration administration. (2) perfect the regulations of medical device registration administration. (3) reform the medical device review organizational system. (4) Optimize the procedure of review and approval. (5) set up and maintain a professional team of review and approval staff. (6) reinforce the post-marketing supervision of medical devices. (7) foster and bring into play of the role of non-government organizations.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Structural color printing based on plasmonic metasurfaces of perfect light absorption

PubMed Central

Cheng, Fei; Gao, Jie; Luk, Ting S.; Yang, Xiaodong

2015-01-01

Subwavelength structural color filtering and printing technologies employing plasmonic nanostructures have recently been recognized as an important and beneficial complement to the traditional colorant-based pigmentation. However, the color saturation, brightness and incident angle tolerance of structural color printing need to be improved to meet the application requirement. Here we demonstrate a structural color printing method based on plasmonic metasurfaces of perfect light absorption to improve color performances such as saturation and brightness. Thin-layer perfect absorbers with periodic hole arrays are designed at visible frequencies and the absorption peaks are tuned by simply adjusting the hole size and periodicity. Near perfect light absorption with high quality factors are obtained to realize high-resolution, angle-insensitive plasmonic color printing with high color saturation and brightness. Moreover, the fabricated metasurfaces can be protected with a protective coating for ambient use without degrading performances. The demonstrated structural color printing platform offers great potential for applications ranging from security marking to information storage. PMID:26047486

Near perfect light trapping in 2D metal nanotrench gratings and its application for sensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Guo, Junpeng; Guo, Hong; Li, Zhitong

2016-09-01

In this work, a 2D metallic nano-trench array was fabricated on gold metal surface by using an e-beam lithography patterning and etching process. Optical reflectance from the device was measured at oblique angles of incidence for TE and TM polarization. Near perfect light trapping was observed at different wavelengths for TE and TM polarization at oblique angle of incidence. As angle of incidence increases, light trapping wavelength has a red-shift for TM polarization and blue shift for TE polarization. The fabricated nano-trench device was also investigated for chemical sensor application. It was found that by varying the angle of incidence, the sensitivity changes with opposite trends for TE and TM polarization. Sensor sensitivity increases for TM polarization and decreases for TE polarization with increase of the oblique incident angle.

Inverse design of near unity efficiency perfectly vertical grating couplers

NASA Astrophysics Data System (ADS)

Michaels, Andrew; Yablonovitch, Eli

2018-02-01

Efficient coupling between integrated optical waveguides and optical fibers is essential to the success of integrated photonics. While many solutions exist, perfectly vertical grating couplers which scatter light out of a waveguide in the direction normal to the waveguide's top surface are an ideal candidate due to their potential to reduce packaging complexity. Designing such couplers with high efficiency, however, has proven difficult. In this paper, we use electromagnetic inverse design techniques to optimize a high efficiency two-layer perfectly vertical silicon grating coupler. Our base design achieves a chip-to-fiber coupling efficiency of over 99% (-0.04 dB) at 1550 nm. Using this base design, we apply subsequent constrained optimizations to achieve vertical couplers with over 96% efficiency which are fabricable using a 65 nm process.

Encapsulation methods and dielectric layers for organic electrical devices

DOEpatents

Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

2013-07-02

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Method for fabricating solar cells having integrated collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1979-01-01

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Device and methods for writing and erasing analog information in small memory units via voltage pulses

DOEpatents

El Gabaly Marquez, Farid; Talin, Albert Alec

2018-04-17

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Stretchable and foldable electronic devices

DOEpatents

Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

2013-10-08

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

Stretchable and foldable electronic devices

DOEpatents

Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

2014-12-09

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

Enhancing Critical Infrastructure and Key Resources (CIKR) Level-0 Physical Process Security Using Field Device Distinct Native Attribute Features

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lopez, Juan; Liefer, Nathan C.; Busho, Colin R.

Here, the need for improved Critical Infrastructure and Key Resource (CIKR) security is unquestioned and there has been minimal emphasis on Level-0 (PHY Process) improvements. Wired Signal Distinct Native Attribute (WS-DNA) Fingerprinting is investigated here as a non-intrusive PHY-based security augmentation to support an envisioned layered security strategy. Results are based on experimental response collections from Highway Addressable Remote Transducer (HART) Differential Pressure Transmitter (DPT) devices from three manufacturers (Yokogawa, Honeywell, Endress+Hauer) installed in an automated process control system. Device discrimination is assessed using Time Domain (TD) and Slope-Based FSK (SB-FSK) fingerprints input to Multiple Discriminant Analysis, Maximum Likelihood (MDA/ML)more » and Random Forest (RndF) classifiers. For 12 different classes (two devices per manufacturer at two distinct set points), both classifiers performed reliably and achieved an arbitrary performance benchmark of average cross-class percent correct of %C > 90%. The least challenging cross-manufacturer results included near-perfect %C ≈ 100%, while the more challenging like-model (serial number) discrimination results included 90%< %C < 100%, with TD Fingerprinting marginally outperforming SB-FSK Fingerprinting; SB-FSK benefits from having less stringent response alignment and registration requirements. The RndF classifier was most beneficial and enabled reliable selection of dimensionally reduced fingerprint subsets that minimize data storage and computational requirements. The RndF selected feature sets contained 15% of the full-dimensional feature sets and only suffered a worst case %CΔ = 3% to 4% performance degradation.« less

Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

DOEpatents

Alivisatos, A. Paul; Colvin, Vickie

1996-01-01

An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics

DOE PAGES

Subbiah, Anand S.; Mahuli, Neha; Agarwal, Sumanshu; ...

2017-07-21

Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge-transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge-transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all-inorganic transport layers in a planar p-i-n junction device configuration using formamidinium lead tribromide (FAPbBr 3) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputteredmore » zinc oxide as hole- and electron-transport materials, respectively. Using only inorganic charge-transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75% at an open-circuit voltage of 1.23 V. In conclusion, the transition of planar FAPbBr 3 devices making from all-organic towards all-inorganic charge-transport layers is studied in detail.« less

Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subbiah, Anand S.; Mahuli, Neha; Agarwal, Sumanshu

Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge-transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge-transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all-inorganic transport layers in a planar p-i-n junction device configuration using formamidinium lead tribromide (FAPbBr 3) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputteredmore » zinc oxide as hole- and electron-transport materials, respectively. Using only inorganic charge-transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75% at an open-circuit voltage of 1.23 V. In conclusion, the transition of planar FAPbBr 3 devices making from all-organic towards all-inorganic charge-transport layers is studied in detail.« less

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE PAGES

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.; ...

2018-02-02

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Selective excitation of window and buffer layers in chalcopyrite devices and modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glynn, Stephen; Repins, Ingrid L.; Burst, James M.

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects ofmore » the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. Furthermore, this provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.« less

Wrapped optoelectronic devices and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Curran, Seamus; Dias, Sampath; Alley, Nigel

In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively,more » the optoelectronic devices may be organic light emitting diodes.« less

Ultra-broadband and wide-angle perfect absorber based on composite metal-semiconductor grating

NASA Astrophysics Data System (ADS)

Li, Xu; Wang, Zongpeng; Hou, Yumin

2018-01-01

In this letter, we present an ultra-broadband and wide-angle perfect absorber based on composite Ge-Ni grating. Near perfect absorption above 90% is achieved in a wide frequency range from 150 nm to 4200 nm, which covers almost the full spectrum of solar radiation. The absorption keeps robust in a wide range of incident angle from 0º to 60º. The upper triangle Ge grating works as an antireflection coating. The lower Ni grating works as a reflector and an effective energy trapper. The guided modes inside Ge grating are excited due to reflection of the lower Ni grating surface. In longer wavelength band, gap surface plasmons (GSPs) in the Ni grating are excited and couple with the guided modes inside the Ge grating. The coupled modes extend the perfect absorption band to the near-infrared region (150 nm-4200 nm). This design has potential application in photovoltaic devices and thermal emitters.

Coherent perfect absorbers: linear control of light with light

NASA Astrophysics Data System (ADS)

Baranov, Denis G.; Krasnok, Alex; Shegai, Timur; Alù, Andrea; Chong, Yidong

2017-12-01

The absorption of electromagnetic energy by a material is a phenomenon that underlies many applications, including molecular sensing, photocurrent generation and photodetection. Typically, the incident energy is delivered to the system through a single channel, for example, by a plane wave incident on one side of an absorber. However, absorption can be made much more efficient by exploiting wave interference. A coherent perfect absorber is a system in which the complete absorption of electromagnetic radiation is achieved by controlling the interference of multiple incident waves. Here, we review recent advances in the design and applications of such devices. We present the theoretical principles underlying the phenomenon of coherent perfect absorption and give an overview of the photonic structures in which it can be realized, including planar and guided-mode structures, graphene-based systems, parity-symmetric and time-symmetric structures, 3D structures and quantum-mechanical systems. We then discuss possible applications of coherent perfect absorption in nanophotonics, and, finally, we survey the perspectives for the future of this field.

Laser fabrication of perfect absorbers

NASA Astrophysics Data System (ADS)

Mizeikis, V.; Faniayeu, I.

2018-01-01

We describe design and characterization of electromagnetic metasurfaces consisting of sub-wavelength layers of artificially structured 3D metallic elements arranged into two-dimensional arrays. Such metasurfaces allow novel ways to control propagation, absorption, emission, and polarization state of electromagnetic waves, but their practical realization using traditional planar micro-/nano-fabrication techniques is extremely difficult at infra- red frequencies, where unit cell size must be reduced to few micrometers. We have addressed this challenge by using femtosecond direct laser write (DLW) technique as a high-resolution patterning tool for the fabrication of dielectric templates, followed by a simple metallization process. Functional metasurfaces consisting of metallic helices and vertical split-ring resonators that can be used as perfect absorbers and polarization converters at infra- red frequencies were obtained and characterized experimentally and theoretically. In the future they may find applications in narrow-band infra-red detectors and emitters, spectral filters, and combined into multi-functional, multi-layered structures.

Optimal damping profile ratios for stabilization of perfectly matched layers in general anisotropic media

DOE PAGES

Gao, Kai; Huang, Lianjie

2017-11-13

Conventional perfectly matched layers (PML) can be unstable for certain kinds of anisotropic media. Multi-axial PML removes such instability using nonzero damping coe cients in the directions tangential with the PML interface. While using non-zero damping pro le ratios can stabilize PML, it is important to obtain the smallest possible damping pro le ratios to minimize arti cial re ections caused by these non-zero ratios, particularly for 3D general anisotropic media. Using the eigenvectors of the PML system matrix, we develop a straightforward and e cient numerical algorithm to determine the optimal damping pro le ratios to stabilize PML inmore » 2D and 3D general anisotropic media. Numerical examples show that our algorithm provides optimal damping pro le ratios to ensure the stability of PML and complex-frequency-shifted PML for elastic-wave modeling in 2D and 3D general anisotropic media.« less

Optimal damping profile ratios for stabilization of perfectly matched layers in general anisotropic media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Kai; Huang, Lianjie

Conventional perfectly matched layers (PML) can be unstable for certain kinds of anisotropic media. Multi-axial PML removes such instability using nonzero damping coe cients in the directions tangential with the PML interface. While using non-zero damping pro le ratios can stabilize PML, it is important to obtain the smallest possible damping pro le ratios to minimize arti cial re ections caused by these non-zero ratios, particularly for 3D general anisotropic media. Using the eigenvectors of the PML system matrix, we develop a straightforward and e cient numerical algorithm to determine the optimal damping pro le ratios to stabilize PML inmore » 2D and 3D general anisotropic media. Numerical examples show that our algorithm provides optimal damping pro le ratios to ensure the stability of PML and complex-frequency-shifted PML for elastic-wave modeling in 2D and 3D general anisotropic media.« less

Message-passing-interface-based parallel FDTD investigation on the EM scattering from a 1-D rough sea surface using uniaxial perfectly matched layer absorbing boundary.

PubMed

Li, J; Guo, L-X; Zeng, H; Han, X-B

2009-06-01

A message-passing-interface (MPI)-based parallel finite-difference time-domain (FDTD) algorithm for the electromagnetic scattering from a 1-D randomly rough sea surface is presented. The uniaxial perfectly matched layer (UPML) medium is adopted for truncation of FDTD lattices, in which the finite-difference equations can be used for the total computation domain by properly choosing the uniaxial parameters. This makes the parallel FDTD algorithm easier to implement. The parallel performance with different processors is illustrated for one sea surface realization, and the computation time of the parallel FDTD algorithm is dramatically reduced compared to a single-process implementation. Finally, some numerical results are shown, including the backscattering characteristics of sea surface for different polarization and the bistatic scattering from a sea surface with large incident angle and large wind speed.

Glass for Solid State Devices

NASA Technical Reports Server (NTRS)

Bailey, R. F.

1982-01-01

Glass film has low intrinsic compressive stress for isolating active layers of magnetic-bubble and other solid-state devices. Solid-state device structure incorporates low-stress glasses as barrier and spacer layers. Glass layers mechanically isolate substrate, conductor, and nickel/iron layers.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-05-20

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-11-25

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Control of acoustic absorption in one-dimensional scattering by resonant scatterers

NASA Astrophysics Data System (ADS)

Merkel, A.; Theocharis, G.; Richoux, O.; Romero-García, V.; Pagneux, V.

2015-12-01

We experimentally report perfect acoustic absorption through the interplay of the inherent losses and transparent modes with high Q factor. These modes are generated in a two-port, one-dimensional waveguide, which is side-loaded by isolated resonators of moderate Q factor. In symmetric structures, we show that in the presence of small inherent losses, these modes lead to coherent perfect absorption associated with one-sided absorption slightly larger than 0.5. In asymmetric structures, near perfect one-sided absorption is possible (96%) with a deep sub-wavelength sample ( λ / 28 , where λ is the wavelength of the sound wave in the air). The control of strong absorption by the proper tuning of the radiation leakage of few resonators with weak losses will open possibilities in various wave-control devices.

An Enhanced LoRaWAN Security Protocol for Privacy Preservation in IoT with a Case Study on a Smart Factory-Enabled Parking System.

PubMed

You, Ilsun; Kwon, Soonhyun; Choudhary, Gaurav; Sharma, Vishal; Seo, Jung Taek

2018-06-08

The Internet of Things (IoT) utilizes algorithms to facilitate intelligent applications across cities in the form of smart-urban projects. As the majority of devices in IoT are battery operated, their applications should be facilitated with a low-power communication setup. Such facility is possible through the Low-Power Wide-Area Network (LPWAN), but at a constrained bit rate. For long-range communication over LPWAN, several approaches and protocols are adopted. One such protocol is the Long-Range Wide Area Network (LoRaWAN), which is a media access layer protocol for long-range communication between the devices and the application servers via LPWAN gateways. However, LoRaWAN comes with fewer security features as a much-secured protocol consumes more battery because of the exorbitant computational overheads. The standard protocol fails to support end-to-end security and perfect forward secrecy while being vulnerable to the replay attack that makes LoRaWAN limited in supporting applications where security (especially end-to-end security) is important. Motivated by this, an enhanced LoRaWAN security protocol is proposed, which not only provides the basic functions of connectivity between the application server and the end device, but additionally averts these listed security issues. The proposed protocol is developed with two options, the Default Option (DO) and the Security-Enhanced Option (SEO). The protocol is validated through Burrows⁻Abadi⁻Needham (BAN) logic and the Automated Validation of Internet Security Protocols and Applications (AVISPA) tool. The proposed protocol is also analyzed for overheads through system-based and low-power device-based evaluations. Further, a case study on a smart factory-enabled parking system is considered for its practical application. The results, in terms of network latency with reliability fitting and signaling overheads, show paramount improvements and better performance for the proposed protocol compared with the two handshake options, Pre-Shared Key (PSK) and Elliptic Curve Cryptography (ECC), of Datagram Transport Layer Security (DTLS).

The theory of the anti-maser: coherent perfect absorption of RF

NASA Astrophysics Data System (ADS)

Aviles, Michael; Mazzocco, Anthony; Andrews, Jim; Dawson, Nathan; Crescimanno, Michael

2012-10-01

The radio frequency (RF)-analogue of the anti-laser is developed using four terminal network theory combined with the telegrapher's equation. We describe solutions of the Coherent Perfect Absorption (CPA) condition that are interpretable as the slab dielectric anti-laser. We find a host of other solutions, some of which have no simple optical analogue. Broadband solutions are found which hint at the possibility of a new type of asymmetric transient CPA phenomenon, and point out that this study suggests a potentially new low loss, reversible RF devices.

Perfect absorption of modified-molybdenum-disulfide-based Tamm plasmonic structures

NASA Astrophysics Data System (ADS)

Wang, Xiaoyu; Wang, Jicheng; Hu, Zheng-Da; Sang, Tian; Feng, Yan

2018-06-01

The two-dimensional semiconductor materials of transition metal molybdenum disulfide display various special optical properties in the interaction of matter and light. In this work, we study the strong coupling between the two-dimensional materials’ excitons and Tamm plasmon polaritons (TPPs). To enhance the interaction between light and matter, we introduce the grating modulation in the traditional Tamm structure. By adjusting the structure parameters of the grating-modified Tamm system, we achieve perfect absorption in the visible region. Our research results will pave the way for the application of ultrathin polarization optical devices.

Crystal structure and optical properties of silver nanorings

NASA Astrophysics Data System (ADS)

Zhou, Li; Fu, Xiao-Feng; Yu, Liao; Zhang, Xian; Yu, Xue-Feng; Hao, Zhong-Hua

2009-04-01

We report the polyol synthesis and crystal structure characterization of silver nanorings, which have perfect circular shape, smooth surface, and elliptical wire cross-section. The characterization results show that the silver nanorings have well-defined crystal of singly twinned along the whole ring. The spatial distribution of the scattering of a silver nanoring with slanted incidence reveals the unique focus effect of the nanoring, and the focus scattering varies with the incident wavelength. The silver nanorings with perfect geometry and well-defined crystal have potential applications in nanoscaled photonics, plasmonic devices, and optical manipulation.

Stacked white OLED having separate red, green and blue sub-elements

DOEpatents

Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

2014-07-01

The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

Conductive atomic force microscopy measurements of nanopillar magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Evarts, E. R.; Hogg, C.; Bain, J. A.; Majetich, S. A.

2009-03-01

Magnetic tunnel junctions have been studied extensively for their magnetoresistance and potential uses in magnetic logic and data storage devices, but little is known about how their performance will scale with size. Here we examined the electronic behavior of 12 nm diameter magnetic tunnel junctions fabricated by a novel nanomasking process. Scanning electron microscopy images indicated feature diameter of 12 nm, and atomic force microscopy showed a height of 5 nm suggesting that unmasked regions have been milled on average to the oxide barrier layer, and areas should have the remnants of the free layer exposed with no remaining nanoparticle. Electrical contact was made to individual nanopillars using a doped-diamond-coated atomic force microscopy probe with a 40 nm radius of curvature at the tip. Off pillar we observed a resistance of 8.1 x 10^5 φ, while on pillar we found a resistance of 2.85 x 10^6 φ. Based on the RA product for this film, 120 φ-μm^2, a 12 nm diameter cylinder with perfect contact would have a resistance of 1.06 x 10^6 φ. The larger experimental value is consistent with a smaller contact area due to damaging the pillar during the ion milling process. The magnetoresistance characteristics of these magnetic tunnel junctions will be discussed.

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

NASA Astrophysics Data System (ADS)

Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.

2013-11-01

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.

Efficient double-emitting layer inverted organic light-emitting devices with different spacer layers

NASA Astrophysics Data System (ADS)

Nie, Qu-yang; Zhang, Fang-hui

2017-09-01

Double-emitting layer inverted organic light-emitting devices (IOLEDs) with different spacer layers were investigated, where 2,20,7,70-tetrakis(carbazol-9-yl)-9,9-spirobifluorene (CBP), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 4,40,400-tris(N-carbazolyl)-triphenylamine (TCTA) were used as spacer layers, respectively, and GIr1 and R-4b were used as green and red guest phosphorescent materials, respectively. The results show that the device with BCP spacer layer has the best performance. The maximum current efficiency of the BCP spacer layer device reaches up to 24.15 cd·A-1 when the current density is 3.99 mA·cm-2, which is 1.23 times bigger than that of the CBP spacer layer device. The performance is better than that of corresponding conventional device observably. The color coordinate of the device with BCP spacer layer only changes from (0.625 1, 0.368 0) to (0.599 5, 0.392 8) when the driving voltage increases from 6 V to 10 V, so it shows good stability in color coordinate, which is due to the adoption of the co-doping evaporation method for cladding luminous layer and the effective restriction of spacer layer to carriers in emitting layer.

Environmental barrier material for organic light emitting device and method of making

DOEpatents

Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

2003-02-18

An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

Self-organized semiconductor nano-network on graphene

NASA Astrophysics Data System (ADS)

Son, Dabin; Kim, Sang Jin; Lee, Seungmin; Bae, Sukang; Kim, Tae-Wook; Kang, Jae-Wook; Lee, Sang Hyun

2017-04-01

A network structure consisting of nanomaterials with a stable structural support and charge path on a large area is desirable for various electronic and optoelectronic devices. Generally, network structures have been fabricated via two main strategies: (1) assembly of pre-grown nanostructures onto a desired substrate and (2) direct growth of nanomaterials onto a desired substrate. In this study, we utilized the surface defects of graphene to form a nano-network of ZnO via atomic layer deposition (ALD). The surface of pure and structurally perfect graphene is chemically inert. However, various types of point and line defects, including vacancies/adatoms, grain boundaries, and ripples in graphene are generated by growth, chemical or physical treatments. The defective sites enhance the chemical reactivity with foreign atoms. ZnO nanoparticles formed by ALD were predominantly deposited at the line defects and agglomerated with increasing ALD cycles. Due to the formation of the ZnO nano-network, the photocurrent between two electrodes was clearly changed under UV irradiation as a result of the charge transport between ZnO and graphene. The line patterned ZnO/graphene (ZnO/G) nano-network devices exhibit sensitivities greater than ten times those of non-patterned structures. We also confirmed the superior operation of a fabricated flexible photodetector based on the line patterned ZnO/G nano-network.

Fast determination of the current loss mechanisms in textured crystalline Si-based solar cells

NASA Astrophysics Data System (ADS)

Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

2017-11-01

A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the current loss mechanisms of the state-of-the-art solar cells with ˜20% efficiencies have been revealed. In the established method, the optical and electrical losses are characterized from the analysis of an experimental external quantum efficiency (EQE) spectrum with very low computational cost. In particular, we have performed the EQE analyses of textured c-Si solar cells by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the current loss mechanisms in different types of c-Si solar cells are discussed.

Broadband perfect infrared absorption by tuning epsilon-near-zero and epsilon-near-pole resonances of multilayer ITO nanowires.

PubMed

Zhou, Kun; Cheng, Qiang; Song, Jinlin; Lu, Lu; Jia, Zhihao; Li, Junwei

2018-01-01

We numerically investigate the broadband perfect infrared absorption by tuning epsilon-near-zero (ENZ) and epsilon-near-pole (ENP) resonances of multilayer indium tin oxide nanowires (ITO NWs). The monolayer ITO NWs array shows intensive absorption at ENZ and ENP wavelengths for p polarization, while only at the ENP wavelength for s polarization. Moreover, the ENP resonances are almost omnidirectional and the ENZ resonances are angularly dependent. Therefore, the absorption bandwidth is broader for p polarization than that for s polarization when polarized waves are incident obliquely. The ENZ resonances can be tuned by altering the doping concentration and volume filling factor of ITO NWs. However, the ENP resonances only can be tuned by changing the doping concentration of ITO NWs, and volume filling factor impacts little on the ENP resonances. Based on the strong absorption properties of each layer at their own ENP and ENZ resonances, the tuned absorption of the bilayer ITO NWs with the different doping concentrations can be broader and stronger. Furthermore, multilayer ITO NWs can achieve broadband perfect absorption by controlling the doping concentration, volume filling factor, and length of the NWs in each layer. This study has the potential to apply to applications requiring efficient absorption and energy conversion.

Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

NASA Technical Reports Server (NTRS)

Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

2015-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

DOE PAGES

Li, Xufan; Basile, Leonardo; Huang, Bing; ...

2015-07-22

Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigationsmore » of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E 2 1g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.« less

Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Basile, Leonardo; Huang, Bing

Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigationsmore » of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E 2 1g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.« less

Design of triple-band polarization controlled terahertz metamaterial absorber

NASA Astrophysics Data System (ADS)

Wang, Ben-Xin; Xie, Qin; Dong, Guangxi; Huang, Wei-Qing

2018-02-01

A kind of triple-band polarization tunable terahertz absorber based on a metallic mirror and a metallic patch structure with two indentations spaced by an insulating medium layer is presented. Results prove that three near-perfect absorption peaks with average absorption coefficients of 98.25% are achieved when the polarization angle is equal to zero, and their absorptivities gradually decrease (and even disappear) by increasing the angle of polarization. When the polarization angle is increased to 90°, three new resonance modes with average absorption rates of 96.59% can be obtained. The field distributions are given to reveal the mechanisms of the triple-band absorption and the polarization tunable characteristics. Moreover, by introducing photosensitive silicon materials (its conductivity can be changed by the pump beam) in the indentations of the patch structure, the number of resonance peaks of the device can be actively tuned from triple-band to dual-band. The presented absorbers have potential applications, such as controlling thermal emissivity, and detection of polarization direction of the incident waves.

Broadband and wide angle near-unity absorption in graphene-insulator-metal thin film stacks

NASA Astrophysics Data System (ADS)

Zhang, H. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.

2018-05-01

Broadband unity absorption in graphene-insulator-metal (GIM) structures is demonstrated in the visible (VIS) and near-infrared (NIR) spectra. The spectral characteristics possess broadband absorption peaks, by simply choosing a stack of GIM, while no nanofabrication steps and patterning are required, and thus can be easily fabricated to cover a large area. The electromagnetic (EM) waves can be entirely trapped and the absorption can be greatly enhanced are verified with the finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA) methods. The position and the number of the absorption peak can be totally controlled by adjusting the thickness of the insulator layer. The proposed absorber maintains high absorption (above 90%) for both transverse electric (TE) and transverse magnetic (TM) polarizations, and for angles of incidence up to 80°. This work opens up a promising approach to realize perfect absorption (PA) with ultra-thin film, which could implicate many potential applications in optical detection and optoelectronic devices.

Finite-element analysis of scattering parameters of surface acoustic wave bandpass filter formed on barium titanate thin film

NASA Astrophysics Data System (ADS)

Timoshenko; Kalinchuk; Shirokov

2018-04-01

The frequency dependence of scattering parameters of interdigital surface acoustic wave transducers placed on ferroelectric barium titanate (BaTiO3) epitaxial film in c-phase coated over magnesium oxide has been studied using the finite-element method (FEM) approach along with the perfectly matched layer (PML) technique. The interdigital transducer which has a comb-like structure with aluminum electrodes excites the mechanical wave. The distance between the fingers allows tuning the frequency properties of the wave propagation. The magnesium oxide is taken as the substrate. The two-dimensional model of two-port surface acoustic wave filter is created to calculate scattering parameters and to show how to design the fixture in COMSOLTM. Some practical computational challenges of finite element modeling of SAW devices in COMSOLTM are shown. The effect of lattice misfit strain on acoustic properties of heterostructures of BaTiO3 epitaxial film in c-phase at room temperature is discussed in present article for two low-frequency surface acoustic resonances.

Thin film photovoltaic device with multilayer substrate

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1984-01-01

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Dual-band wide-angle metamaterial perfect absorber based on the combination of localized surface plasmon resonance and Helmholtz resonance.

PubMed

Zhang, Changlei; Huang, Cheng; Pu, Mingbo; Song, Jiakun; Zhao, Zeyu; Wu, Xiaoyu; Luo, Xiangang

2017-07-18

In this article, a dual-band wide-angle metamaterial perfect absorber is proposed to achieve absorption at the wavelength where laser radar operates. It is composed of gold ring array and a Helmholtz resonance cavity spaced by a Si dielectric layer. Numerical simulation results reveal that the designed absorber displays two absorption peaks at the target wavelength of 10.6 μm and 1.064 μm with the large frequency ratio and near-unity absorptivity under the normal incidence. The wide-angle absorbing property and the polarization-insensitive feature are also demonstrated. Localized surface plasmons resonance and Helmholtz resonance are introduced to analyze and interpret the absorbing mechanism. The designed perfect absorber can be developed for potential applications in infrared stealth field.

Solid state photosensitive devices which employ isolated photosynthetic complexes

DOEpatents

Peumans, Peter; Forrest, Stephen R.

2009-09-22

Solid state photosensitive devices including photovoltaic devices are provided which comprise a first electrode and a second electrode in superposed relation; and at least one isolated Light Harvesting Complex (LHC) between the electrodes. Preferred photosensitive devices comprise an electron transport layer formed of a first photoconductive organic semiconductor material, adjacent to the LHC, disposed between the first electrode and the LHC; and a hole transport layer formed of a second photoconductive organic semiconductor material, adjacent to the LHC, disposed between the second electrode and the LHC. Solid state photosensitive devices of the present invention may comprise at least one additional layer of photoconductive organic semiconductor material disposed between the first electrode and the electron transport layer; and at least one additional layer of photoconductive organic semiconductor material, disposed between the second electrode and the hole transport layer. Methods of generating photocurrent are provided which comprise exposing a photovoltaic device of the present invention to light. Electronic devices are provided which comprise a solid state photosensitive device of the present invention.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

DOEpatents

Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

2015-05-12

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

Passive safety device and internal short tested method for energy storage cells and systems

DOEpatents

Keyser, Matthew; Darcy, Eric; Long, Dirk; Pesaran, Ahmad

2015-09-22

A passive safety device for an energy storage cell for positioning between two electrically conductive layers of the energy storage cell. The safety device also comprising a separator and a non-conductive layer. A first electrically conductive material is provided on the non-conductive layer. A first opening is formed through the separator between the first electrically conductive material and one of the electrically conductive layers of the energy storage device. A second electrically conductive material is provided adjacent the first electrically conductive material on the non-conductive layer, wherein a space is formed on the non-conductive layer between the first and second electrically conductive materials. A second opening is formed through the non-conductive layer between the second electrically conductive material and another of the electrically conductive layers of the energy storage device. The first and second electrically conductive materials combine and exit at least partially through the first and second openings to connect the two electrically conductive layers of the energy storage device at a predetermined temperature.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Solar cells having integral collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer.

Organic light emitting device having multiple separate emissive layers

DOEpatents

Forrest, Stephen R [Ann Arbor, MI

2012-03-27

An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

NASA Astrophysics Data System (ADS)

Nie, Qu-yang; Zhang, Fang-hui

2018-05-01

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

Method of fabricating an optoelectronic device having a bulk heterojunction

DOEpatents

Shtein, Max [Ann Arbor, MI; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2008-10-14

A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

4-channels coherent perfect absorption (CPA)-type demultiplexer using plasmonic nano spheres

NASA Astrophysics Data System (ADS)

Soltani, Mohamadreza; Keshavarzi, Rasul

2017-10-01

The current research represents a nanoscale and compact 4-channels plasmonic demultiplexer. It includes eight coherent perfect absorption (CPA) - type filters. The operation principle is based on the absorbable formation of a conductive path in the dielectric layer of a plasmonic nano-spheres waveguide. Since the CPA efficiency depends strongly on the number of plasmonic nano-spheres and the nano spheres location, an efficient binary optimization method based on the Particle Swarm Optimization algorithm is used to design an optimized array of the plasmonic nano-sphere in order to achieve the maximum absorption coefficient in the 'off' state.

Non-Uniform Thickness Electroactive Device

NASA Technical Reports Server (NTRS)

Su, Ji (Inventor); Harrison, Joycelyn S. (Inventor)

2006-01-01

An electroactive device comprises at least two layers of material, wherein at least one layer is an electroactive material and wherein at least one layer is of non-uniform thickness. The device can be produced in various sizes, ranging from large structural actuators to microscale or nanoscale devices. The applied voltage to the device in combination with the non-uniform thickness of at least one of the layers (electroactive and/or non-electroactive) controls the contour of the actuated device. The effective electric field is a mathematical function of the local layer thickness. Therefore, the local strain and the local bending/ torsion curvature are also a mathematical function of the local thickness. Hence the thinnest portion of the actuator offers the largest bending and/or torsion response. Tailoring of the layer thicknesses can enable complex motions to be achieved.

Organic photovoltaic device with interfacial layer and method of fabricating same

DOEpatents

Marks, Tobin J.; Hains, Alexander W.

2013-03-19

An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5'-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2'-bithiophene (PABTSi.sub.2).

Photoemissive coating

NASA Technical Reports Server (NTRS)

Gange, R. A.

1972-01-01

Polystyrene coating is applied to holographic storage tube substrate via glow discharge polymerization in an inert environment. After deposition of styrene coating, antimony and then cesium are added to produce photoemissive layer. Technique is utilized in preparing perfectly organized polymeric films useful as single-crystal membranes.

Defects and oxidation of group-III monochalcogenide monolayers

NASA Astrophysics Data System (ADS)

Guo, Yu; Zhou, Si; Bai, Yizhen; Zhao, Jijun

2017-09-01

Among various two-dimensional (2D) materials, monolayer group-III monochalcogenides (GaS, GaSe, InS, and InSe) stand out owing to their potential applications in microelectronics and optoelectronics. Devices made of these novel 2D materials are sensitive to environmental gases, especially O2 molecules. To address this critical issue, here we systematically investigate the oxidization behaviors of perfect and defective group-III monochalcogenide monolayers by first-principles calculations. The perfect monolayers show superior oxidation resistance with large barriers of 3.02-3.20 eV for the dissociation and chemisorption of O2 molecules. In contrast, the defective monolayers with single chalcogen vacancy are vulnerable to O2, showing small barriers of only 0.26-0.36 eV for the chemisorption of an O2 molecule. Interestingly, filling an O2 molecule to the chalcogen vacancy of group-III monochalcogenide monolayers could preserve the electronic band structure of the perfect system—the bandgaps are almost intact and the carrier effective masses are only moderately disturbed. On the other hand, the defective monolayers with single vacancies of group-III atoms carry local magnetic moments of 1-2 μB. These results help experimental design and synthesis of group-III monochalcogenides based 2D devices with high performance and stability.

Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

NASA Astrophysics Data System (ADS)

Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

2018-03-01

This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk

2014-10-15

The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightnessmore » of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.« less

Reducing graphene device variability with yttrium sacrificial layers

NASA Astrophysics Data System (ADS)

Wang, Ning C.; Carrion, Enrique A.; Tung, Maryann C.; Pop, Eric

2017-05-01

Graphene technology has made great strides since the material was isolated more than a decade ago. However, despite improvements in growth quality and numerous "hero" devices, challenges of uniformity remain, restricting the large-scale development of graphene-based technologies. Here, we investigate and reduce the variability of graphene transistors by studying the effects of contact metals (with and without a Ti layer), resist, and yttrium (Y) sacrificial layers during the fabrication of hundreds of devices. We find that with optical photolithography, residual resist and process contamination are unavoidable, ultimately limiting the device performance and yield. However, using Y sacrificial layers to isolate the graphene from processing conditions improves the yield (from 73% to 97%), the average device performance (three-fold increase of mobility and 58% lower contact resistance), and the device-to-device variability (standard deviation of Dirac voltage reduced by 20%). In contrast to other sacrificial layer techniques, the removal of the Y sacrificial layer with dilute HCl does not harm surrounding materials, simplifying large-scale graphene fabrication.

Resonant tunneling device with two-dimensional quantum well emitter and base layers

DOEpatents

Simmons, J.A.; Sherwin, M.E.; Drummond, T.J.; Weckwerth, M.V.

1998-10-20

A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation. 43 figs.

Resonant tunneling device with two-dimensional quantum well emitter and base layers

DOEpatents

Simmons, Jerry A.; Sherwin, Marc E.; Drummond, Timothy J.; Weckwerth, Mark V.

1998-01-01

A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.

Application of the perfectly matched layer in 2.5D marine controlled-source electromagnetic modeling

NASA Astrophysics Data System (ADS)

Li, Gang; Han, Bo

2017-09-01

For the traditional framework of EM modeling algorithms, the Dirichlet boundary is usually used which assumes the field values are zero at the boundaries. This crude condition requires that the boundaries should be sufficiently far away from the area of interest. Although cell sizes could become larger toward the boundaries as electromagnetic wave is propagated diffusively, a large modeling area may still be necessary to mitigate the boundary artifacts. In this paper, the complex frequency-shifted perfectly matched layer (CFS-PML) in stretching Cartesian coordinates is successfully applied to 2.5D frequency-domain marine controlled-source electromagnetic (CSEM) field modeling. By using this PML boundary, one can restrict the modeling area of interest to the target region. Only a few absorbing layers surrounding the computational area can effectively depress the artificial boundary effect without losing the numerical accuracy. A 2.5D marine CSEM modeling scheme with the CFS-PML is developed by using the staggered finite-difference discretization. This modeling algorithm using the CFS-PML is of high accuracy, and shows advantages in computational time and memory saving than that using the Dirichlet boundary. For 3D problem, this computation time and memory saving should be more significant.

Implementation of perfectly matched layers in an arbitrary geometrical boundary for elastic wave modelling

NASA Astrophysics Data System (ADS)

Gao, Hongwei; Zhang, Jianfeng

2008-09-01

The perfectly matched layer (PML) absorbing boundary condition is incorporated into an irregular-grid elastic-wave modelling scheme, thus resulting in an irregular-grid PML method. We develop the irregular-grid PML method using the local coordinate system based PML splitting equations and integral formulation of the PML equations. The irregular-grid PML method is implemented under a discretization of triangular grid cells, which has the ability to absorb incident waves in arbitrary directions. This allows the PML absorbing layer to be imposed along arbitrary geometrical boundaries. As a result, the computational domain can be constructed with smaller nodes, for instance, to represent the 2-D half-space by a semi-circle rather than a rectangle. By using a smooth artificial boundary, the irregular-grid PML method can also avoid the special treatments to the corners, which lead to complex computer implementations in the conventional PML method. We implement the irregular-grid PML method in both 2-D elastic isotropic and anisotropic media. The numerical simulations of a VTI lamb's problem, wave propagation in an isotropic elastic medium with curved surface and in a TTI medium demonstrate the good behaviour of the irregular-grid PML method.

Multi-layer micro/nanofluid devices with bio-nanovalves

DOEpatents

Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.

2013-01-01

A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

Organic photovoltaic devices with a single layer geometry (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kolesov, Vladimir A.; Fuentes-Hernandez, Canek; Aizawa, Naoya; Larrain, Felipe A.; Chou, Wen-Fang; Perrotta, Alberto; Graham, Samuel; Kippelen, Bernard

2016-09-01

Organic photovoltaics (OPV) can lead to a low cost and short energy payback time alternative to existing photovoltaic technologies. However, to fulfill this promise, power conversion efficiencies must be improved and simultaneously the architecture of the devices and their processing steps need to be further simplified. In the most efficient devices to date, the functions of photocurrent generation, and hole/electron collection are achieved in different layers adding complexity to the device fabrication. In this talk, we present a novel approach that yields devices in which all these functions are combined in a single layer. Specifically, we report on bulk heterojunction devices in which amine-containing polymers are first mixed in the solution together with the donor and acceptor materials that form the active layer. A single-layer coating yields a self-forming bottom electron-collection layer comprised of the amine-containing polymer (e.g. PEIE). Hole-collection is achieved by subsequent immersion of this single layer in a solution of a polyoxometalate (e.g. phosphomolybdic acid (PMA)) leading to an electrically p-doped region formed by the diffusion of the dopant molecules into the bulk. The depth of this doped region can be controlled with values up to tens of nm by varying the immersion time. Devices with a single 500 nm-thick active layer of P3HT:ICBA processed using this method yield power conversion efficiency (PCE) values of 4.8 ± 0.3% at 1 sun and demonstrate a performance level superior to that of benchmark three-layer devices with separate layers of PEIE/P3HT:ICBA/MoOx (4.1 ± 0.4%). Devices remain stable after shelf lifetime experiments carried-out at 60 °C over 280 h.

QUASI-PML FOR WAVES IN CYLINDRICAL COORDINATES. (R825225)

EPA Science Inventory

We prove that the straightforward extension of Berenger's original perfectly matched layer (PML) is not reflectionless at a cylindrical interface in the continuum limit. A quasi-PLM is developed as an absorbing boundary condition (ABC) for the finite-difference time-domain method...

Exploring the heterogeneous interfaces in organic or ruthenium dye-sensitized liquid- and solid-state solar cells.

PubMed

Kwon, Young Soo; Song, Inwoo; Lim, Jong Chul; Song, In Young; Siva, Ayyanar; Park, Taiho

2012-06-27

The interfacial properties were systematically investigated using an organic sensitizer (3-(5'-{4-[(4-tert-butyl-phenyl)-p-tolyl-amino]-phenyl}-[2,2']bithiophenyl-5-yl)-2-cyano-acrylic acid (D)) and inorganic sensitizer (bis(tetrabutylammonium) cis-bis(thiocyanato)bis(2,2'-bipyridine-4,4'-dicarboxylato) ruthenium(II) (N719)) in a liquid-state and a solid-state dye-sensitized solar cell (DSC). For liquid-DSCs, the faster charge recombination for the surface of D-sensitized TiO2 resulted in shorter diffusion length (LD) of ∼3.9 μm than that of N719 (∼7.5 μm), limiting the solar cell performance at thicker films used in liquid-DSCs. On the other hand, for solid-DSCs using thin TiO2 films (∼ 2 μm), D-sensitized device outperforms the N719-sensitized device in an identical fabrication condition, mainly due to less perfect wetting ability of solid hole conductor into the porous TiO2 network, inducing the dye monolayer act as an insulation layer, while liquid electrolyte is able to fully wet the surface of TiO2. Such insulation effect was attributed to the fact that the significant increase in recombination resistance (from 865 to 4,400 Ω/cm(2)) but shorter electron lifetime (from 10.8 to 0.8 ms) when compared to liquid-DSCs. Higher recombination resistance for solid-DSCs induced the electron transport-limited situation, showing poor performance of N719-sensitized device which has shorter electron transport time and similar LD (2.9 μm) with D-sensitized device (3.0 μm).

Modeling methods of MEMS micro-speaker with electrostatic working principle

NASA Astrophysics Data System (ADS)

Tumpold, D.; Kaltenbacher, M.; Glacer, C.; Nawaz, M.; Dehé, A.

2013-05-01

The market for mobile devices like tablets, laptops or mobile phones is increasing rapidly. Device housings get thinner and energy efficiency is more and more important. Micro-Electro-Mechanical-System (MEMS) loudspeakers, fabricated in complementary metal oxide semiconductor (CMOS) compatible technology merge energy efficient driving technology with cost economical fabrication processes. In most cases, the fabrication of such devices within the design process is a lengthy and costly task. Therefore, the need for computer modeling tools capable of precisely simulating the multi-field interactions is increasing. The accurate modeling of such MEMS devices results in a system of coupled partial differential equations (PDEs) describing the interaction between the electric, mechanical and acoustic field. For the efficient and accurate solution we apply the Finite Element (FE) method. Thereby, we fully take the nonlinear effects into account: electrostatic force, charged moving body (loaded membrane) in an electric field, geometric nonlinearities and mechanical contact during the snap-in case between loaded membrane and stator. To efficiently handle the coupling between the mechanical and acoustic fields, we apply Mortar FE techniques, which allow different grid sizes along the coupling interface. Furthermore, we present a recently developed PML (Perfectly Matched Layer) technique, which allows limiting the acoustic computational domain even in the near field without getting spurious reflections. For computations towards the acoustic far field we us a Kirchhoff Helmholtz integral (e.g, to compute the directivity pattern). We will present simulations of a MEMS speaker system based on a single sided driving mechanism as well as an outlook on MEMS speakers using double stator systems (pull-pull-system), and discuss their efficiency (SPL) and quality (THD) towards the generated acoustic sound.

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

NASA Astrophysics Data System (ADS)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Charge dissipative dielectric for cryogenic devices

NASA Technical Reports Server (NTRS)

Cantor, Robin Harold (Inventor); Hall, John Addison (Inventor)

2007-01-01

A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2011-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2012-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

76 FR 50184 - Procurement List, Additions and Deletions

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-12

..., Giant Cupcake, 3pc NSN: M.R. 1151--Set, Pan, Bake, Perfect Brownie Pan, 3pc NSN: M.R. 1152--Set, Pasta Cooker, Blue, Pasta Express, 7pc NSN: M.R. 1155--Glove, Oven, Flexi NSN: M.R. 1156--Device, Cutting...

Electrodes mitigating effects of defects in organic electronic devices

DOEpatents

Heller, Christian Maria Anton [Albany, NY

2008-05-06

A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

Light trapping architecture for photovoltaic and photodector applications

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.; Slootsky, Michael

2016-08-09

There is disclosed photovoltaic device structures which trap admitted light and recycle it through the contained photosensitive materials to maximize photoabsorption. For example, there is disclosed a photosensitive optoelectronic device comprising: a first reflective layer comprising a thermoplastic resin; a second reflective layer substantially parallel to the first reflective layer; a first transparent electrode layer on at least one of the first and second reflective layer; and a photosensitive region adjacent to the first electrode, wherein the first transparent electrode layer is substantially parallel to the first reflective layer and adjacent to the photosensitive region, and wherein the device has an exterior face transverse to the planes of the reflective layers where the exterior face has an aperture for admission of incident radiation to the interior of the device.

Catalytic devices

DOEpatents

Liu, Ming; Zhang, Xiang

2018-01-23

This disclosure provides systems, methods, and apparatus related to catalytic devices. In one aspect, a device includes a substrate, an electrically insulating layer disposed on the substrate, a layer of material disposed on the electrically insulating layer, and a catalyst disposed on the layer of material. The substrate comprises an electrically conductive material. The substrate and the layer of material are electrically coupled to one another and configured to have a voltage applied across them.

Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

NASA Astrophysics Data System (ADS)

Yastrubchak, O.; Sadowski, J.; Gluba, L.; Domagala, J. Z.; Rawski, M.; Żuk, J.; Kulik, M.; Andrearczyk, T.; Wosinski, T.

2014-08-01

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition.

Optoelectronic device with nanoparticle embedded hole injection/transport layer

DOEpatents

Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

2012-01-03

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Ultra-low loss fully-etched grating couplers for perfectly vertical coupling compatible with DUV lithography tools

NASA Astrophysics Data System (ADS)

Dabos, G.; Pleros, N.; Tsiokos, D.

2016-03-01

Hybrid integration of VCSELs onto silicon-on-insulator (SOI) substrates has emerged as an attractive approach for bridging the gap between cost-effective and energy-efficient directly modulated laser sources and silicon-based PICs by leveraging flip-chip (FC) bonding techniques and silicon grating couplers (GCs). In this context, silicon GCs, should comply with the process requirements imposed by the complimentary-metal-oxide-semiconductor manufacturing tools addressing in parallel the challenges originating from the perfectly vertical incidence. Firstly, fully etched GCs compatible with deep-ultraviolet lithography tools offering high coupling efficiencies are imperatively needed to maintain low fabrication cost. Secondly, GC's tolerance to VCSEL bonding misalignment errors is a prerequisite for practical deployment. Finally, a major challenge originating from the perfectly vertical coupling scheme is the minimization of the direct back-reflection to the VCSEL's outgoing facet which may destabilize its operation. Motivated from the above challenges, we used numerical simulation tools to design an ultra-low loss, bidirectional VCSEL-to-SOI optical coupling scheme for either TE or TM polarization, based on low-cost fully etched GCs with a Si-layer of 340 nm without employing bottom reflectors or optimizing the buried-oxide layer. Comprehensive 2D Finite-Difference-Time- Domain simulations have been performed. The reported GC layout remains fully compatible with the back-end-of-line (BEOL) stack associated with the 3D integration technology exploiting all the inter-metal-dielectric (IMD) layers of the CMOS fab. Simulation results predicted for the first time in fully etched structures a coupling efficiency of as low as -0.87 dB at 1548 nm and -1.47 dB at 1560 nm with a minimum direct back-reflection of -27.4 dB and -14.2 dB for TE and TM polarization, respectively.

Simulation of hypersonic shock wave - laminar boundary layer interactions

NASA Astrophysics Data System (ADS)

Kianvashrad, N.; Knight, D.

2017-06-01

The capability of the Navier-Stokes equations with a perfect gas model for simulation of hypersonic shock wave - laminar boundary layer interactions is assessed. The configuration is a hollow cylinder flare. The experimental data were obtained by Calspan-University of Buffalo (CUBRC) for total enthalpies ranging from 5.07 to 21.85 MJ/kg. Comparison of the computed and experimental surface pressure and heat transfer is performed and the computed §ow¦eld structure is analyzed.

Electron imaging with Medipix2 hybrid pixel detector.

PubMed

McMullan, G; Cattermole, D M; Chen, S; Henderson, R; Llopart, X; Summerfield, C; Tlustos, L; Faruqi, A R

2007-01-01

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 microm x 55 microm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 microm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach approximately 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach approximately 35% of that expected for a perfect detector (4/pi(2)). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/pi). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected values for the MTF and DQE as a function of the threshold energy. The good agreement between theory and experiment allows suggestions for further improvements to be made with confidence. The present detector is already very useful for experiments that require a high DQE at very low doses.

Method of producing strained-layer semiconductor devices via subsurface-patterning

DOEpatents

Dodson, Brian W.

1993-01-01

A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

Organic Optoelectronic Devices Employing Small Molecules

NASA Astrophysics Data System (ADS)

Fleetham, Tyler Blain

Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt-16. Furthermore, the development of a series of tetradentate Pt complexes yielded highly efficient and stable single doped white devices due to their halogen free tetradentate design. In addition to these benchmark achievements, the systematic molecular modification of both emissive and absorbing materials provides valuable structure-property relationship information that should help guide further developments in the field.

THE PERFECTLY MATCHED LAYER (PML) FOR ACOUSTIC WAVES IN ABSORPTIVE MEDIA. (R825225)

EPA Science Inventory

The perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Concl...

A PML-FDTD ALGORITHM FOR SIMULATING PLASMA-COVERED CAVITY-BACKED SLOT ANTENNAS. (R825225)

EPA Science Inventory

A three-dimensional frequency-dependent finite-difference time-domain (FDTD) algorithm with perfectly matched layer (PML) absorbing boundary condition (ABC) and recursive convolution approaches is developed to model plasma-covered open-ended waveguide or cavity-backed slot antenn...

PERFECTLY MATCHED LAYERS FOR ELASTIC WAVES IN CYLINDRICAL AND SPHERICAL COORDINATES. (R825225)

EPA Science Inventory

The perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Concl...

Thin film photovoltaic devices with a minimally conductive buffer layer

DOEpatents

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Organic photosensitive devices using subphthalocyanine compounds

DOEpatents

Rand, Barry [Princeton, NJ; Forrest, Stephen R [Ann Arbor, MI; Mutolo, Kristin L [Hollywood, CA; Mayo, Elizabeth [Alhambra, CA; Thompson, Mark E [Anaheim Hills, CA

2011-07-05

An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

Science and Emerging Technology of 2D Atomic Layered Materials and Devices

DTIC Science & Technology

2017-09-09

AFRL-AFOSR-JP-TR-2017-0067 Science & Emerging Technology of 2D Atomic Layered Materials and Devices Angel Rubio UNIVERSIDAD DEL PAIS VASCO - EUSKAL...Emerging Technology of 2D Atomic Layered Materials and Devices 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-15-1-0006 5c.  PROGRAM ELEMENT NUMBER...reporting documents for AOARD project 144088, “2D Materials and Devices Beyond Graphene Science & Emerging Technology of 2D Atomic Layered Materials and

A novel unsplit perfectly matched layer for the second-order acoustic wave equation.

PubMed

Ma, Youneng; Yu, Jinhua; Wang, Yuanyuan

2014-08-01

When solving acoustic field equations by using numerical approximation technique, absorbing boundary conditions (ABCs) are widely used to truncate the simulation to a finite space. The perfectly matched layer (PML) technique has exhibited excellent absorbing efficiency as an ABC for the acoustic wave equation formulated as a first-order system. However, as the PML was originally designed for the first-order equation system, it cannot be applied to the second-order equation system directly. In this article, we aim to extend the unsplit PML to the second-order equation system. We developed an efficient unsplit implementation of PML for the second-order acoustic wave equation based on an auxiliary-differential-equation (ADE) scheme. The proposed method can benefit to the use of PML in simulations based on second-order equations. Compared with the existing PMLs, it has simpler implementation and requires less extra storage. Numerical results from finite-difference time-domain models are provided to illustrate the validity of the approach. Copyright © 2014 Elsevier B.V. All rights reserved.

Perfectly matched layers in a divergence preserving ADI scheme for electromagnetics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kraus, C.; ETH Zurich, Chair of Computational Science, 8092 Zuerich; Adelmann, A., E-mail: andreas.adelmann@psi.ch

For numerical simulations of highly relativistic and transversely accelerated charged particles including radiation fast algorithms are needed. While the radiation in particle accelerators has wavelengths in the order of 100 {mu}m the computational domain has dimensions roughly five orders of magnitude larger resulting in very large mesh sizes. The particles are confined to a small area of this domain only. To resolve the smallest scales close to the particles subgrids are envisioned. For reasons of stability the alternating direction implicit (ADI) scheme by Smithe et al. [D.N. Smithe, J.R. Cary, J.A. Carlsson, Divergence preservation in the ADI algorithms for electromagnetics,more » J. Comput. Phys. 228 (2009) 7289-7299] for Maxwell equations has been adopted. At the boundary of the domain absorbing boundary conditions have to be employed to prevent reflection of the radiation. In this paper we show how the divergence preserving ADI scheme has to be formulated in perfectly matched layers (PML) and compare the performance in several scenarios.« less

Analysis of the electromagnetic scattering from an inlet geometry with lossy walls

NASA Technical Reports Server (NTRS)

Myung, N. H.; Pathak, P. H.; Chunang, C. D.

1985-01-01

One of the primary goals is to develop an approximate but sufficiently accurate analysis for the problem of electromagnetic (EM) plane wave scattering by an open ended, perfectly-conducting, semi-infinite hollow circular waveguide (or duct) with a thin, uniform layer of lossy or absorbing material on its inner wall, and with a simple termination inside. The less difficult but useful problem of the EM scattering by a two-dimensional (2-D), semi-infinite parallel plate waveguide with an impedance boundary condition on the inner walls was chosen initially for analysis. The impedance boundary condition in this problem serves to model a thin layer of lossy dielectric/ferrite coating on the otherwise perfectly-conducting interior waveguide walls. An approximate but efficient and accurate ray solution was obtained recently. That solution is presently being extended to the case of a moderately thick dielectric/ferrite coating on the walls so as to be valid for situations where the impedance boundary condition may not remain sufficiently accurate.

Acoustic perfect absorption and broadband insulation achieved by double-zero metamaterials

NASA Astrophysics Data System (ADS)

Wang, Xiaole; Luo, Xudong; Zhao, Hui; Huang, Zhenyu

2018-01-01

We report the mechanism for simultaneous realization of acoustic perfect absorption (PA) and broadband insulation (BI) in the acoustic free field by a layered acoustic metamaterial (LAM). The proposed LAM comprises two critically coupled membrane-type acoustic metamaterials sandwiching a porous material layer. Both theoretical and experimental results verify that the proposed LAM sample can achieve nearly PA (98.4% in experiments) at 312 Hz with a thickness of 15 mm (1/73 of wavelength) and BI in the frequency range of 200-1000 Hz with an areal density of 2.2 kg/m2. In addition, the real parts of both the effective dynamic density and bulk modulus reach zero precisely at the critical frequency of 312 Hz, arising from the monopolar eigenmode of LAM. Our work advances the concept of synthetic design of sound absorption and insulation properties of multi-impedance-coupled acoustic systems and promotes membrane-type acoustic metamaterials to more practical engineering applications.

Lithium-drifted silicon detector with segmented contacts

DOEpatents

Tindall, Craig S.; Luke, Paul N.

2006-06-13

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

Effect of delayed pMDI actuation on the lung deposition of a fixed-dose combination aerosol drug.

PubMed

Farkas, Árpád; Horváth, Alpár; Kerekes, Attila; Nagy, Attila; Kugler, Szilvia; Tamási, Lilla; Tomisa, Gábor

2018-06-07

Lack of coordination between the beginning of the inhalation and device triggering is one of the most frequent errors reported in connection with the use of pMDI devices. Earlier results suggested a significant loss in lung deposition as a consequence of late actuation. However, most of our knowledge on the effect of poor synchronization is based on earlier works on CFC devices emitting large particles with high initial velocities. The aim of this study was to apply numerical techniques to analyse the effect of late device actuation on the lung dose of a HFA pMDI drug emitting high fraction of extrafine particles used in current asthma and COPD therapy. A computational fluid and particle dynamics model was combined with stochastic whole lung model to quantify the amount of drug depositing in the extrathoracic airways and in the lungs. High speed camera measurements were also performed to characterize the emitted spray plume. Our results have shown that for the studied pMDI drug late actuation leads to reasonable loss in terms of lung dose, unless it happens in the second half of the inhalation period. Device actuation at the middle of the inhalation caused less than 25% lung dose reduction relative to the value characterizing perfect coordination, if the inhalation time was between 2-5 s and inhalation flow rate between 30-150 L/min. This dose loss is lower than the previously known values of CFC devices and further support the practice of triggering the device shortly after the beginning of the inhalation instead of forcing a perfect synchronization and risking mishandling and poor drug deposition. Copyright © 2018. Published by Elsevier B.V.

Mass production compatible fabrication techniques of single-crystalline silver metamaterials and plasmonics devices

NASA Astrophysics Data System (ADS)

Rodionov, Ilya A.; Baburin, Alexander S.; Zverev, Alexander V.; Philippov, Ivan A.; Gabidulin, Aidar R.; Dobronosova, Alina A.; Ryzhova, Elena V.; Vinogradov, Alexey P.; Ivanov, Anton I.; Maklakov, Sergey S.; Baryshev, Alexander V.; Trofimov, Igor V.; Merzlikin, Alexander M.; Orlikovsky, Nikolay A.; Rizhikov, Ilya A.

2017-08-01

During last 20 years, great results in metamaterials and plasmonic nanostructures fabrication were obtained. However, large ohmic losses in metals and mass production compatibility still represent the most serious challenge that obstruct progress in the fields of metamaterials and plasmonics. Many recent research are primarily focused on developing low-loss alternative materials, such as nitrides, II-VI semiconductor oxides, high-doped semiconductors, or two-dimensional materials. In this work, we demonstrate that our perfectly fabricated silver films can be an effective low-loss material system, as theoretically well-known. We present a fabrication technology of plasmonic and metamaterial nanodevices on transparent (quartz, mica) and non-transparent (silicon) substrates by means of e-beam lithography and ICP dry etch instead of a commonly-used focused ion beam (FIB) technology. We eliminate negative influence of litho-etch steps on silver films quality and fabricate square millimeter area devices with different topologies and perfect sub-100 nm dimensions reproducibility. Our silver non-damage fabrication scheme is tested on trial manufacture of spasers, plasmonic sensors and waveguides, metasurfaces, etc. These results can be used as a flexible device manufacture platform for a broad range of practical applications in optoelectronics, communications, photovoltaics and biotechnology.

Delivery Device and Method for Forming the Same

NASA Technical Reports Server (NTRS)

Liu, Xiaohua (Inventor); Ma, Peter X. (Inventor); McCauley, Laurie (Inventor)

2014-01-01

A delivery device includes a hollow container, and a plurality of biodegradable and/or erodible polymeric layers established in the container. A layer including a predetermined substance is established between each of the plurality of polymeric layers, whereby degradation of the polymeric layer and release of the predetermined substance occur intermittently. Methods for forming the device are also disclosed herein.

Structured luminescence conversion layer

DOEpatents

Berben, Dirk; Antoniadis, Homer; Jermann, Frank; Krummacher, Benjamin Claus; Von Malm, Norwin; Zachau, Martin

2012-12-11

An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

PubMed

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, X. L.; Meng, Q. X.; Yuan, C. X.

The visible light broadband perfect absorbers based on the silver (Ag) nano elliptical disks and holes array are studied using finite difference time domain simulations. The semiconducting indium silicon dioxide thin film is introduced as the space layer in this sandwiched structure. Utilizing the asymmetrical geometry of the structures, polarization sensitivity for transverse electric wave (TE)/transverse magnetic wave (TM) and left circular polarization wave (LCP)/right circular polarization wave (RCP) of the broadband absorption are gained. The absorbers with Ag nano disks and holes array show several peaks absorbance of 100% by numerical simulation. These simple and flexible perfect absorbers aremore » particularly desirable for various potential applications including the solar energy absorber.« less

Interconnected semiconductor devices

DOEpatents

Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

1990-10-23

Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

Method of making organic light emitting devices

DOEpatents

Shiang, Joseph John [Niskayuna, NY; Janora, Kevin Henry [Schenectady, NY; Parthasarathy, Gautam [Saratoga Springs, NY; Cella, James Anthony [Clifton Park, NY; Chichak, Kelly Scott [Clifton Park, NY

2011-03-22

The present invention provides a method for the preparation of organic light-emitting devices comprising a bilayer structure made by forming a first film layer comprising an electroactive material and an INP precursor material, and exposing the first film layer to a radiation source under an inert atmosphere to generate an interpenetrating network polymer composition comprising the electroactive material. At least one additional layer is disposed on the reacted first film layer to complete the bilayer structure. The bilayer structure is comprised within an organic light-emitting device comprising standard features such as electrodes and optionally one or more additional layers serving as a bipolar emission layer, a hole injection layer, an electron injection layer, an electron transport layer, a hole transport layer, exciton-hole transporting layer, exciton-electron transporting layer, a hole transporting emission layer, or an electron transporting emission layer.

Highly air stable passivation of graphene based field effect devices.

PubMed

Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

2015-02-28

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

Multi-layer seal for electrochemical devices

DOEpatents

Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

2010-11-16

Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

Multi-layer seal for electrochemical devices

DOEpatents

Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

2010-09-14

Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Ultra-sensing with slit-enhanced infrared spectroscopy (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mayerhöfer, Thomas G.; Knipper, Richard; Hübner, Uwe; Cialla-May, Dana; Weber, Karina; Popp, Jürgen

2017-02-01

Infrared spectroscopy enables the label-free detection of structure specific fingerprints of analytes. The sensitivity of corresponding methods can strongly be enhanced by attaching analytes on plasmonic active surfaces. We introduce a slit array metamaterial perfect absorber (SAMPA) [1] consisting of a dielectric layer sandwiched between two Au layers of which the upper layer is perforated with a periodic array of slits. This structure combines the principle of Extraordinary Optical Transmission (more light is transmitted through a hole than is incident on its surface) with that of Perfect Absorption (reflectance and transmittance are virtually zero). Accordingly, within the slights the electric fields are strongly enhanced and light-matter interaction is correspondingly greatly amplified. Thus, already small concentrations of analytes down to a monolayer can be detected and identified by their spectral fingerprints with a standard mid-infrared spectrometer. Closely related to the SAMPAs are plasmonic slit absorbers, which simply consist of slit arrays in thin gold layers deposited on a layer of Si3N4.[2] These slit arrays operate like unstructured gold layers if the incident light is polarized parallel to the long slit axes. In contrast, for light polarized perpendicular to the long slit axis, the plasmon is excited. By the introduction of a second slit, which is rotated relative to the first slit, both principal polarization states excite plasmon resonances which can be made to differ in wavelength. As a consequence, the operating wavelength range of this slit array can be tuned by adjusting the polarization state of the incoming light. [1] Mayerhöfer, T.G., et al.. ACS Photonics, 2015. 2(11): p. 1567-1575. [2] Knipper, R., et. al., in preparation.

Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

NASA Astrophysics Data System (ADS)

Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

2017-08-01

In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit)2-based device with graphene nanoribbon electrodes

NASA Astrophysics Data System (ADS)

Liu, N.; Liu, J. B.; Yao, K. L.

2017-12-01

We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit)2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC) and the antiparallel configuration (APC). At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

NASA Astrophysics Data System (ADS)

Lee, Shinbuhm; MacManus-Driscoll, Judith L.

2017-04-01

This review provides the design principles to develop new nanoionic applications using vertically aligned nanostructured (VAN) thin films, incorporating two phases which self-assemble in one film. Tunable nanoionics has attracted great attention for energy and device applications, such as ion batteries, solid oxide fuel cells, catalysts, memories, and neuromorphic devices. Among many proposed device architectures, VAN films have strong potential for nanoionic applications since they show enhanced ionic conductivity and tunability. Here, we will review the recent progress on state-of-the-art nanoionic applications, which have been realized by using VAN films. In many VAN systems made by the inclusion of an oxygen ionic insulator, it is found that ions flow through the vertical heterointerfaces. The observation is consistent with structural incompatibility at the vertical heteroepitaxial interfaces resulting in oxygen deficiency in one of the phases and hence to oxygen ion conducting pathways. In other VAN systems where one of the phases is an ionic conductor, ions flow much faster within the ionic conducting phase than within the corresponding plain film. The improved ionic conduction coincides with much improved crystallinity in the ionically conducting nanocolumnar phase, induced by use of the VAN structure. Furthermore, for both cases Joule heating effects induced by localized ionic current flow also play a role for enhanced ionic conductivity. Nanocolumn stoichiometry and strain are other important parameters for tuning ionic conductivity in VAN films. Finally, double-layered VAN film architectures are discussed from the perspective of stabilizing VAN structures which would be less stable and hence less perfect when grown on standard substrates.

Fullerene Derived Molecular Electronic Devices

NASA Technical Reports Server (NTRS)

Menon, Madhu; Srivastava, Deepak; Saini, Subbash

1998-01-01

The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

2000-01-01

An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

Optical conformal mapping.

PubMed

Leonhardt, Ulf

2006-06-23

An invisibility device should guide light around an object as if nothing were there, regardless of where the light comes from. Ideal invisibility devices are impossible, owing to the wave nature of light. This study develops a general recipe for the design of media that create perfect invisibility within the accuracy of geometrical optics. The imperfections of invisibility can be made arbitrarily small to hide objects that are much larger than the wavelength. With the use of modern metamaterials, practical demonstrations of such devices may be possible. The method developed here can also be applied to escape detection by other electromagnetic waves or sound.

A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas

NASA Astrophysics Data System (ADS)

López, Alexander; Medina, Ernesto; Bolívar, Nelson; Berche, Bertrand

2010-03-01

A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas.

PubMed

López, Alexander; Medina, Ernesto; Bolívar, Nelson; Berche, Bertrand

2010-03-24

A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

Deviation from the law of energy equipartition in a small dynamic-random-access memory

NASA Astrophysics Data System (ADS)

Carles, Pierre-Alix; Nishiguchi, Katsuhiko; Fujiwara, Akira

2015-06-01

A small dynamic-random-access memory (DRAM) coupled with a high charge sensitivity electrometer based on a silicon field-effect transistor is used to study the law of equipartition of energy. By statistically analyzing the movement of single electrons in the DRAM at various temperature and voltage conditions in thermal equilibrium, we are able to observe a behavior that differs from what is predicted by the law of equipartition energy: when the charging energy of the capacitor of the DRAM is comparable to or smaller than the thermal energy kBT/2, random electron motion is ruled perfectly by thermal energy; on the other hand, when the charging energy becomes higher in relation to the thermal energy kBT/2, random electron motion is suppressed which indicates a deviation from the law of equipartition of energy. Since the law of equipartition is analyzed using the DRAM, one of the most familiar devices, we believe that our results are perfectly universal among all electronic devices.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramalingam, Balavinayagam; Zheng, Haisheng; Gangopadhyay, Shubhra, E-mail: gangopadhyays@missouri.edu

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attainedmore » with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.« less

Mechanistic insights into the photoinduced charge carrier dynamics of BiOBr/CdS nanosheet heterojunctions for photovoltaic application.

PubMed

Jia, Huimin; Zhang, Beibei; He, Weiwei; Xiang, Yong; Zheng, Zhi

2017-03-02

The rational design of high performance hetero-structure photovoltaic devices requires a full understanding of the photoinduced charge transfer mechanism and kinetics at the interface of heterojunctions. In this paper, we intelligently fabricated p-BiOBr/n-CdS heterojunctions with perfect nanosheet arrays by using a facile successive ionic layer adsorption and reaction and chemical bath deposition methods at low temperature. A BiOBr/CdS heterojunction based solar cell has been fabricated which exhibited enhanced photovoltaic responses. Assisted by the surface photovoltage (SPV), transient photovoltage (TPV) and Kelvin probe technique, the photoinduced charge transfer dynamics on the BiOBr nanosheet and p-BiOBr/n-CdS interface were systematically investigated. It was found that the BiOBr/CdS nanosheet array heterojunctions were more efficient in facilitating charge carrier separation than both bare BiOBr and CdS films. The mechanism underlying the photoinduced charge carrier transfer behaviour was unravelled by allying the energy band of BiOBr/CdS p-n junctions from both the interfacial electric field and surface electric field. In addition, the CdS loading thickness in the p-BiOBr/n-CdS heterojunction and the incident wavelength affected greatly the transfer behavior of photoinduced charges, which was of great value for design of photovoltaic devices.

Experimental and Computational Aerothermodynamics of a Mars Entry Vehicle

NASA Technical Reports Server (NTRS)

Hollis, Brian R.

1996-01-01

An aerothermodynamic database has been generated through both experimental testing and computational fluid dynamics simulations for a 70 deg sphere-cone configuration based on the NASA Mars Pathfinder entry vehicle. The aerothermodynamics of several related parametric configurations were also investigated. Experimental heat-transfer data were obtained at hypersonic test conditions in both a perfect gas air wind tunnel and in a hypervelocity, high-enthalpy expansion tube in which both air and carbon dioxide were employed as test gases. In these facilities, measurements were made with thin-film temperature-resistance gages on both the entry vehicle models and on the support stings of the models. Computational results for freestream conditions equivalent to those of the test facilities were generated using an axisymmetric/2D laminar Navier-Stokes solver with both perfect-gas and nonequilibrium thermochemical models. Forebody computational and experimental heating distributions agreed to within the experimental uncertainty for both the perfect-gas and high-enthalpy test conditions. In the wake, quantitative differences between experimental and computational heating distributions for the perfect-gas conditions indicated transition of the free shear layer near the reattachment point on the sting. For the high enthalpy cases, agreement to within, or slightly greater than, the experimental uncertainty was achieved in the wake except within the recirculation region, where further grid resolution appeared to be required. Comparisons between the perfect-gas and high-enthalpy results indicated that the wake remained laminar at the high-enthalpy test conditions, for which the Reynolds number was significantly lower than that of the perfect-gas conditions.

Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momblona, C.; Malinkiewicz, O.; Soriano, A.

2014-08-01

Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging frommore » 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.« less

Fabricating with crystalline Si to improve superconducting detector performance

NASA Astrophysics Data System (ADS)

Beyer, A. D.; Hollister, M. I.; Sayers, J.; Frez, C. F.; Day, P. K.; Golwala, S. R.

2017-05-01

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ∼ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C.E.; Benson, D.K.; Ruth, M.R.

1984-12-21

A solid-state transition metal oxide device comprising a plurality of layers having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Methods for making a multi-layer seal for electrochemical devices

DOEpatents

Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

2007-05-29

Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer

NASA Astrophysics Data System (ADS)

Seo, Hong-Kyu; Kim, Kyunghun; Min, Sung-Yong; Lee, Yeongjun; Eon Park, Chan; Raj, Rishi; Lee, Tae-Woo

2017-06-01

To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.

Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Liou, Syuan-Hao; Tsai, Jung-Hui; Liu, Wen-Chau; Lin, Pao-Sheng; Chen, Yu-Chi

2017-10-01

The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer.

Plated lamination structures for integrated magnetic devices

DOEpatents

Webb, Bucknell C.

2014-06-17

Semiconductor integrated magnetic devices such as inductors, transformers, etc., having laminated magnetic-insulator stack structures are provided, wherein the laminated magnetic-insulator stack structures are formed using electroplating techniques. For example, an integrated laminated magnetic device includes a multilayer stack structure having alternating magnetic and insulating layers formed on a substrate, wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by an insulating layer, and a local shorting structure to electrically connect each magnetic layer in the multilayer stack structure to an underlying magnetic layer in the multilayer stack structure to facilitate electroplating of the magnetic layers using an underlying conductive layer (magnetic or seed layer) in the stack as an electrical cathode/anode for each electroplated magnetic layer in the stack structure.

A Perfectly Matched Layer for Peridynamics in Two Dimensions

DTIC Science & Technology

2013-04-01

KIM Seoul National University, Republic of Korea Z. MROZ Academy of Science, Poland D. PAMPLONA Universidade Católica do Rio de Janeiro , Brazil M. B...applications, Prentice-Hall, Upper Saddle River , NJ, 1996. [Silling 2000] S. A. Silling, “Reformulation of elasticity theory for discontinuities and long

Epitaxial CoSi2 on MOS devices

DOEpatents

Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

2005-01-25

An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

Method for fabricating an interconnected array of semiconductor devices

DOEpatents

Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

1989-10-10

Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

76 FR 70117 - Notice of Intent To Grant an Exclusive License; Voltage Networking, LLC

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-10

... dielectric layer and device made therefrom''; Patent No. 6,541,288 entitled ``Method of determining... sacrificial spacer layer''; Patent No. 7,442,577 entitled ``Method of fabricating a patterned device using sacrificial spacer layer''; Patent No. 7,678,593 entitled ``Method of fabricating optical device using...

Up-Close Look at 'Bread-Basket'

NASA Technical Reports Server (NTRS)

2004-01-01

NASA's Mars Exploration Rover Spirit took this image with its front hazard-avoidance camera on sol 175 (June 30, 2004). It captures the instrument deployment device in perfect position as the rover uses its microscopic imager to get an up-close look at the rock target 'Bread-Basket.'

A framework for assessing the uncertainty in wave energy delivery to targeted subsurface formations

NASA Astrophysics Data System (ADS)

Karve, Pranav M.; Kallivokas, Loukas F.; Manuel, Lance

2016-02-01

Stress wave stimulation of geological formations has potential applications in petroleum engineering, hydro-geology, and environmental engineering. The stimulation can be applied using wave sources whose spatio-temporal characteristics are designed to focus the emitted wave energy into the target region. Typically, the design process involves numerical simulations of the underlying wave physics, and assumes a perfect knowledge of the material properties and the overall geometry of the geostructure. In practice, however, precise knowledge of the properties of the geological formations is elusive, and quantification of the reliability of a deterministic approach is crucial for evaluating the technical and economical feasibility of the design. In this article, we discuss a methodology that could be used to quantify the uncertainty in the wave energy delivery. We formulate the wave propagation problem for a two-dimensional, layered, isotropic, elastic solid truncated using hybrid perfectly-matched-layers (PMLs), and containing a target elastic or poroelastic inclusion. We define a wave motion metric to quantify the amount of the delivered wave energy. We, then, treat the material properties of the layers as random variables, and perform a first-order uncertainty analysis of the formation to compute the probabilities of failure to achieve threshold values of the motion metric. We illustrate the uncertainty quantification procedure using synthetic data.

Blunt Body Near-Wake Flow Field at Mach 10

NASA Technical Reports Server (NTRS)

Horvath, Thomas; Hannemann, Klaus

1997-01-01

Tests were conducted in a Mach 10 air flow to examine the reattachment process of a free shear layer associated with the near wake of a 70 deg half angle, spherically blunted cone having a cylindrical after body. The nominal free-stream Reynolds number based on model diameter ranged from 0.25 x l0(exp 6) to 1 x l0(exp 6) and the angle of incidence set at 0 and +/- 20 deg. The present study was designed to complement previously reported Mach 6 perfect air tests as well as results obtained in several hypervelocity facilities capable of producing real gas effects. Surface heating rates were inferred from temperature time histories from coaxial surface thermocouples on the model forebody and thin film resistance gages along the model base and cylindrical after body. Limited forebody, base, and support sting surface pressures were obtained with piezoresistive Experimental results are compared to laminar perfect gas predictions provided by a 3-0 Navier Stokes code (NSHYP). Shear layer impingement on the instrumented cylindrical after body resulted in a localized heating maximum that was 16 to 18percent of the forebody stagnation point and a factor of 2 higher than laminar predictions, suggesting a transitional or turbulent shear layer. transducers.

Stable Ordering in Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Takamoto, Dawn Y.; Aydil, Eray; Zasadzinski, Joseph A.; Ivanova, Ani T.; Schwartz, Daniel K.; Yang, Tinglu; Cremer, Paul S.

2001-08-01

Defects in the layering of Langmuir-Blodgett (LB) films can be eliminated by depositing from the appropriate monolayer phase at the air-water interface. LB films deposited from the hexagonal phase of cadmium arachidate (CdA2) at pH 7 spontaneously transform into the bulk soap structure, a centrosymmetric bilayer with an orthorhombic herringbone packing. A large wavelength folding mechanism accelerates the conversion between the two structures, leading to a disruption of the desired layering. At pH > 8.5, though it is more difficult to draw LB films, almost perfect layering is obtained due to the inability to convert from the as-deposited structure to the equilibrium one.

Enhanced Atom Mobility on the Surface of a Metastable Film

NASA Astrophysics Data System (ADS)

Picone, A.; Riva, M.; Fratesi, G.; Brambilla, A.; Bussetti, G.; Finazzi, M.; Duò, L.; Ciccacci, F.

2014-07-01

A remarkable enhancement of atomic diffusion is highlighted by scanning tunneling microscopy performed on ultrathin metastable body-centered tetragonal Co films grown on Fe(001). The films follow a nearly perfect layer-by-layer growth mode with a saturation island density strongly dependent on the layer on which the nucleation occurs, indicating a lowering of the diffusion barrier. Density functional theory calculations reveal that this phenomenon is driven by the increasing capability of the film to accommodate large deformations as the thickness approaches the limit at which a structural transition occurs. These results disclose the possibility of tuning surface diffusion dynamics and controlling cluster nucleation and self-organization.

Enhanced atom mobility on the surface of a metastable film.

PubMed

Picone, A; Riva, M; Fratesi, G; Brambilla, A; Bussetti, G; Finazzi, M; Duò, L; Ciccacci, F

2014-07-25

A remarkable enhancement of atomic diffusion is highlighted by scanning tunneling microscopy performed on ultrathin metastable body-centered tetragonal Co films grown on Fe(001). The films follow a nearly perfect layer-by-layer growth mode with a saturation island density strongly dependent on the layer on which the nucleation occurs, indicating a lowering of the diffusion barrier. Density functional theory calculations reveal that this phenomenon is driven by the increasing capability of the film to accommodate large deformations as the thickness approaches the limit at which a structural transition occurs. These results disclose the possibility of tuning surface diffusion dynamics and controlling cluster nucleation and self-organization.

Towards Perfectly Absorbing Boundary Conditions for Euler Equations

NASA Technical Reports Server (NTRS)

Hayder, M. Ehtesham; Hu, Fang Q.; Hussaini, M. Yousuff

1997-01-01

In this paper, we examine the effectiveness of absorbing layers as non-reflecting computational boundaries for the Euler equations. The absorbing-layer equations are simply obtained by splitting the governing equations in the coordinate directions and introducing absorption coefficients in each split equation. This methodology is similar to that used by Berenger for the numerical solutions of Maxwell's equations. Specifically, we apply this methodology to three physical problems shock-vortex interactions, a plane free shear flow and an axisymmetric jet- with emphasis on acoustic wave propagation. Our numerical results indicate that the use of absorbing layers effectively minimizes numerical reflection in all three problems considered.

Organic spintronic devices and methods for making the same

DOEpatents

Vardeny, Zee Valentine; Ndobe, Alex

2014-09-23

An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.

Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS₂ Transistors.

PubMed

Ma, Jiyeon; Yoo, Geonwook

2018-09-01

So far many of research on transition metal dichalcogenides (TMDCs) are based on a bottomgate device structure due to difficulty with depositing a dielectric film on top of TMDs channel layer. In this work, we study different effects of various passivation layers on electrical properties of multilayer MoS2 transistors: spin-coated CYTOP, SU-8, and thermal evaporated MoOX. The SU-8 passivation layer alters device performance least significantly, and MoOX induces positive threshold voltage shift of ~8.0 V due to charge depletion at the interface, and the device with CYTOP layer exhibits decreased field-effect mobility by ~50% due to electric dipole field effect of C-F bonds in the end groups. Our results imply that electrical properties of the multilayer MoS2 transistors can be modulated using a passivation layer, and therefore a proper passivation layer should be considered for MoS2 device structures.

Design and measure of a tunable double-band metamaterial absorber in the THz spectrum

NASA Astrophysics Data System (ADS)

Guiming, Han

2018-04-01

We demonstrate and measure a hybrid double-band tunable metamaterial absorber in the terahertz region. The measured metamaterial absorber contains of a hybrid dielectric layer structure: a SU-8 layer and a VO2 layer. Near perfect double-band absorption performances are achieved by optimizing the SU-8 layer thickness at room temperature 25 °C. Measured results show that the phase transition can be observed when the measured temperature reaches 68 °C. Further measured results indicate that the resonance frequency and absorption amplitude of the proposed metamaterial absorber are tunable through increasing the measured temperature, while structural parameters unchanged. The proposed hybrid metamaterial absorber shows many advantages, such as frequency agility, absorption amplitude tunable, and simple fabrication.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

NASA Technical Reports Server (NTRS)

Barron, Andrew R. (Inventor); Hepp, Aloysius F. (Inventor); Jenkins, Phillip P. (Inventor); MacInnes, Andrew N. (Inventor)

1999-01-01

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Multijunction photovoltaic device and fabrication method

DOEpatents

Arya, Rajeewa R.; Catalano, Anthony W.

1993-09-21

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Optically switched graphene/4H-SiC junction bipolar transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.

A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on amore » first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.« less

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

NASA Astrophysics Data System (ADS)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

PubMed

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cipro, R.; Gorbenko, V.; Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble

2014-06-30

Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO{sub 2} cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. Themore » InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.« less

Hydrothermally Activated Graphene Fiber Fabrics for Textile Electrodes of Supercapacitors.

PubMed

Li, Zheng; Huang, Tieqi; Gao, Weiwei; Xu, Zhen; Chang, Dan; Zhang, Chunxiao; Gao, Chao

2017-11-28

Carbon textiles are promising electrode materials for wearable energy storage devices owing to their conductive, flexible, and lightweight features. However, there still lacks a perfect choice for high-performance carbon textile electrodes with sufficient electrochemical activity. Graphene fiber fabrics (GFFs) are newly discovered carbon textiles, exhibiting various attractive properties, especially a large variability on the microstructure. Here we report the fabrication of hierarchical GFFs with significantly enlarged specific surface area using a hydrothermal activation strategy. By carefully optimize the activation process, the hydrothermally activated graphene fiber fabrics (HAGFFs) could achieve an areal capacitance of 1060 mF cm -2 in a very thin thickness (150 μm) and the capacitance is easily magnified by overlaying several layers of HAGFFs, even up to a record value of 7398 mF cm -2 . Meanwhile, a good rate capability and a long cycle life are also attained. As compared with other carbon textiles, including the commercial carbon fiber cloths, our HAGFFs present much better capacitive performance. Therefore, the mechanically stable, flexible, conductive, and highly active HAGFFs have provided an option for high-performance textile electrodes.

A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency

NASA Astrophysics Data System (ADS)

Duan, Xin; Chen, Xing; Zhou, Lin

2016-12-01

A novel metamaterial rectifying surface (MRS) for electromagnetic energy capture and rectification with high harvesting efficiency is presented. It is fabricated on a three-layer printed circuit board, which comprises an array of periodic metamaterial particles in the shape of mirrored split rings, a metal ground, and integrated rectifiers employing Schottky diodes. Perfect impedance matching is engineered at two interfaces, i.e. one between free space and the surface, and the other between the metamaterial particles and the rectifiers, which are connected through optimally positioned vias. Therefore, the incident electromagnetic power is captured with almost no reflection by the metamaterial particles, then channeled maximally to the rectifiers, and finally converted to direct current efficiently. Moreover, the rectifiers are behind the metal ground, avoiding the disturbance of high power incident electromagnetic waves. Such a MRS working at 2.45 GHz is designed, manufactured and measured, achieving a harvesting efficiency up to 66.9% under an incident power density of 5 mW/cm2, compared with a simulated efficiency of 72.9%. This high harvesting efficiency makes the proposed MRS an effective receiving device in practical microwave power transmission applications.

MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth

NASA Astrophysics Data System (ADS)

Schelhase, S.; Böttcher, J.; Gibis, R.; Künzel, H.; Paraskevopoulos, A.

1996-07-01

MOMBE selective infill growth (SIG) of silicon-doped InP and InGaAs was investigated by variation of the principal growth parameters, i.e. temperature, {V}/{III}- ratio and rate. Excellent surface morphology in conjunction with perfect selectivity and defect-free vertical interfaces between the grown layer and the etched substrate sidewall was achieved by an appropriate optimization of the selective growth conditions for InP as well as, for the first time, InGaAs. In the case of SIG of InP, smooth growth boundaries were obtained in the [01¯1] direction, whereas in the [01¯1¯] direction minor growth perturbations occur, which are related to a strong orientation dependent diffusion behavior of the growth species on the growth front. In the case of SIG of InGaAs, slight perturbations accompanied by facet formation at the edges of the selectively grown windows were observed. In the perspective of device application, homogeneous large area MOMBE InGaAs regrowth of the embedded structures was successfully achieved.

The use of 2D and 3D WA-BPM models to analyze total-internal-reflection-based integrated optical switches

NASA Astrophysics Data System (ADS)

Wang, Pengfei; Brambilla, Gilberto; Semenova, Yuliya; Wu, Qiang; Zheng, Jie; Farrell, Gerald

2011-08-01

The well known beam propagation method (BPM) has become one of the most useful, robust and effective numerical simulation tools for the investigation of guided-wave optics, for example integrated optical waveguides and fiber optic devices. In this paper we examine the use of the 2D and 3D wide angle-beam propagation method (WA-BPM) combined with the well known perfectly matched layer (PML) boundary conditions as a tool to analyze TIR based optical switches, in particular the relationship between light propagation and the geometrical parameters of a TIR based optical switch. To analyze the influence of the length and the width of the region in which the refractive index can be externally controlled, the 3D structure of a 2x2 TIR optical switch is firstly considered in 2D using the effective index method (EIM). Then the influence of the etching depth and the tilt angle of the reflection facet on the switch performance are investigated with a 3D model.

Tunable multi-band absorption in metasurface of graphene ribbons based on composite structure

NASA Astrophysics Data System (ADS)

Ning, Renxia; Jiao, Zheng; Bao, Jie

2017-05-01

A tunable multiband absorption based on a graphene metasurface of composite structure at mid-infrared frequency was investigated by the finite difference time domain method. The composite structure were composed of graphene ribbons and a gold-MgF2 layer which was sandwiched in between two dielectric slabs. The permittivity of graphene is discussed with different chemical potential to obtain tunable absorption. And the absorption of the composite structure can be tuned by the chemical potential of graphene at certain frequencies. The impedance matching was used to study the perfect absorption of the structure in our paper. The results show that multi-band absorption can be obtained and some absorption peaks of the composite structure can be tuned through the changing not only of the width of graphene ribbons and gaps, but also the dielectric and the chemical potential of graphene. However, another peak was hardly changed by parameters due to a different resonant mechanism in proposed structure. This flexibily tunable multiband absorption may be applied to optical communications such as optical absorbers, mid infrared stealth devices and filters.

The study of electromagnetic wave propagation in photonic crystals via planewave based transfer (scattering) matrix method with active gain material applications

NASA Astrophysics Data System (ADS)

Li, Ming

In this dissertation, a set of numerical simulation tools are developed under previous work to efficiently and accurately study one-dimensional (1D), two-dimensional (2D), 2D slab and three-dimensional (3D) photonic crystal structures and their defects effects by means of spectrum (transmission, reflection, absorption), band structure (dispersion relation), and electric and/or magnetic fields distribution (mode profiles). Further more, the lasing property and spontaneous emission behaviors are studied when active gain materials are presented in the photonic crystal structures. First, the planewave based transfer (scattering) matrix method (TMM) is described in every detail along with a brief review of photonic crystal history (Chapter 1 and 2). As a frequency domain method, TMM has the following major advantages over other numerical methods: (1) the planewave basis makes Maxwell's Equations a linear algebra problem and there are mature numerical package to solve linear algebra problem such as Lapack and Scalapack (for parallel computation). (2) Transfer (scattering) matrix method make 3D problem into 2D slices and link all slices together via the scattering matrix (S matrix) which reduces computation time and memory usage dramatically and makes 3D real photonic crystal devices design possible; and this also makes the simulated domain no length limitation along the propagation direction (ideal for waveguide simulation). (3) It is a frequency domain method and calculation results are all for steady state, without the influences of finite time span convolution effects and/or transient effects. (4) TMM can treat dispersive material (such as metal at visible light) naturally without introducing any additional computation; and meanwhile TMM can also deal with anisotropic material and magnetic material (such as perfectly matched layer) naturally from its algorithms. (5) Extension of TMM to deal with active gain material can be done through an iteration procedure with gain material expressed by electric field dependent dielectric constant. Next, the concepts of spectrum interpolation (Chapter 3), higher-order incident (Chapter 4) and perfectly matched layer (Chapter 5) are introduced and applied to TMM, with detailed simulation for 1D, 2D, and 3D photonic crystal examples. Curvilinear coordinate transform is applied to the Maxwell's Equations to study waveguide bend (Chapter 6). By finding the phase difference along propagation direction at various XY plane locations, the behaviors of electromagnetic wave propagation (such as light bending, focusing etc) can be studied (Chapter 7), which can be applied to diffractive optics for new devices design. Numerical simulation tools for lasing devices are usually based on rate equations which are not accurate above the threshold and for small scale lasing cavities (such as nano-scale cavities). Recently, we extend the TMM package function to include the capacity of dealing active gain materials. Both lasing (above threshold) and spontaneous emission (below threshold) can be studied in the frame work of our Gain-TMM algorithm. Chapter 8 will illustrate the algorithm in detail and show the simulation results for 3D photonic crystal lasing devices. Then, microwave experiments (mainly resonant cavity embedded at layer-by-layer woodpile structures) are performed at Chapter 9 as an efficient practical way to study photonic crystal devices. The size of photonic crystal under microwave region is at the order of centimeter which makes the fabrication easier to realize. At the same time due to the scaling property, the result of microwave experiments can be applied directly to optical or infrared frequency regions. The systematic TMM simulations for various resonant cavities are performed and consistent results are obtained when compared with microwave experiments. Besides scaling the experimental results to much smaller wavelength, designing potential photonic crystal devices for application at microwave is also an interesting and important topic. Finally, we describe the future development of TMM algorithm such as using localized functions as basis to more efficiently simulate disorder problems (Chapter 10). Future applications of photonic crystal concepts are also discussed at Chapter 10. Along with this dissertation, TMM Photonic Crystal Package User Manual and Gain TMM Photonic Crystal Package User Manual written by me, Dr. Jiangrong Cao (Canon USA) and Dr. Xinhua Hu (Ames Lab) focus more on the programming detail, software user interface, trouble shooting, and step-by-step instructions. This dissertation and the two user manuals are essential documents for TMM software package beginners and advanced users. Future software developments, new version releases and FAQs can be tracked through my web page: http://www.public.iastate.edu/~mli/ In summary, this dissertation has extended the planewave based transfer (scattering) matrix method in many aspects which make the TMM and Gain-TMM software package a powerful simulation tool in photonic crystal study. Comparisons of TMM and GTMM results with other published numerical results and experimental results indicate that TMM and GTMM is accurate and highly efficient in photonic crystal device simulation and design. (Abstract shortened by UMI.)

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Multi-junction solar cell device

DOEpatents

Friedman, Daniel J.; Geisz, John F.

2007-12-18

A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NASA Astrophysics Data System (ADS)

Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

2017-12-01

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Electroluminescent apparatus having a structured luminescence conversion layer

DOEpatents

Krummacher, Benjamin Claus [Sunnyvale, CA

2008-09-02

An apparatus such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains color-changing and non-color-changing regions arranged in a particular pattern.

High-efficiency silicon heterojunction solar cells: Status and perspectives

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Wolf, S.

Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.« less

High-efficiency silicon heterojunction solar cells: Status and perspectives

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Wolf, S.; Geissbuehler, J.; Loper, P.

Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.« less

Structural color printing based on plasmonic metasurfaces of perfect light absorption

DOE PAGES

Cheng, Fei; Gao, Jie; Luk, Ting S.; ...

2015-06-05

Subwavelength structural color filtering and printing technologies employing plasmonic nanostructures have recently been recognized as an important and beneficial complement to the traditional colorant-based pigmentation. However, the color saturation, brightness and incident angle tolerance of structural color printing need to be improved to meet the application requirement. Here we demonstrate a structural color printing method based on plasmonic metasurfaces of perfect light absorption to improve color performances such as saturation and brightness. Thin-layer perfect absorbers with periodic hole arrays are designed at visible frequencies and the absorption peaks are tuned by simply adjusting the hole size and periodicity. Near perfectmore » light absorption with high quality factors are obtained to realize high-resolution, angle-insensitive plasmonic color printing with high color saturation and brightness. Moreover, the fabricated metasurfaces can be protected with a protective coating for ambient use without degrading performances. The demonstrated structural color printing platform offers great potential for applications ranging from security marking to information storage.« less

Inverse design of near unity efficiency perfectly vertical grating couplers.

PubMed

Michaels, Andrew; Yablonovitch, Eli

2018-02-19

Efficient coupling between integrated optical waveguides and optical fibers is essential to the success of silicon photonics. While many solutions exist, perfectly vertical grating couplers that scatter light out of a waveguide in the direction normal to the waveguide's top surface are an ideal candidate due to their potential to reduce packaging complexity. Designing such couplers with high efficiencies, however, has proven difficult. In this paper, we use inverse electromagnetic design techniques to optimize a high efficiency two-layer perfectly vertical silicon grating coupler. Our base design achieves a chip-to-fiber coupling efficiency of 99.2% (-0.035 dB) at 1550 nm. Using this base design as a starting point, we run subsequent constrained optimizations to realize vertical couplers with coupling efficiencies over 96% and back reflections of less than -40 dB which can be fabricated using 65 nm-resolution lithography. These results demonstrate a new path forward for designing fabrication-tolerant ultra high efficiency grating couplers.

Transfer having a coupling coefficient higher than its active material

NASA Technical Reports Server (NTRS)

Lesieutre, George A. (Inventor); Davis, Christopher L. (Inventor)

2001-01-01

A coupling coefficient is a measure of the effectiveness with which a shape-changing material (or a device employing such a material) converts the energy in an imposed signal to useful mechanical energy. Device coupling coefficients are properties of the device and, although related to the material coupling coefficients, are generally different from them. This invention describes a class of devices wherein the apparent coupling coefficient can, in principle, approach 1.0, corresponding to perfect electromechanical energy conversion. The key feature of this class of devices is the use of destabilizing mechanical pre-loads to counter inherent stiffness. The approach is illustrated for piezoelectric and thermoelectrically actuated devices. The invention provides a way to simultaneously increase both displacement and force, distinguishing it from alternatives such as motion amplification, and allows transducer designers to achieve substantial performance gains for actuator and sensor devices.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, James Scott; Wanlass, Mark Woodbury; Gessert, Timothy Arthur

1999-01-01

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, J.S.; Wanlass, M.W.; Gessert, T.A.

1999-04-27

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device. 15 figs.

Method of fabricating an optoelectronic device having a bulk heterojunction

DOEpatents

Shtein, Max [Princeton, NJ; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2008-09-02

A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

Discovery of the Depths

ERIC Educational Resources Information Center

Katsioloudis, Petros J.

2009-01-01

Throughout history the oceans have directly or indirectly influenced humans. The importance of knowing how to protect this valuable resource and insure it for future generations is vital. Underwater Vehicles are tools essential for this process, and therefore research and development to perfect these devices is needed. However, the main goal of…

Diving into the Cloud

ERIC Educational Resources Information Center

O'Hanlon, Charlene; Schaffhauser, Dian

2011-01-01

It's a perfect storm out there, with powerful forces remaking the IT landscape in higher education. On one side, devastating budget cuts are pushing IT departments to identify ever-greater cost savings. On the other, the explosion in mobile devices is pressuring IT to provide anytime, anywhere computing with no downtime. And finally there's…

Experimental demonstration of the anti-maser

NASA Astrophysics Data System (ADS)

Mazzocco, Anthony; Aviles, Michael; Andrews, Jim; Dawson, Nathan; Crescimanno, Michael

2012-10-01

We denote by ``anti-maser'' a coherent perfect absorption (CPA) process in the radio frequency domain. We demonstrate several experimental realizations of the anti-maser suitable for an advanced undergraduate laboratory. Students designed, assembled and tested these devices, as well as the inexpensive laboratory setup and experimental protocol for displaying various CPA phenomenon.

Electroluminescent device having improved light output

DOEpatents

Tyan,; Yuan-Sheng, [Webster, NY; Preuss, Donald R [Rochester, NY; Farruggia, Giuseppe [Webster, NY; Kesel, Raymond A [Avon, NY; Cushman, Thomas R [Rochester, NY

2011-03-22

An OLED device including a transparent substrate having a first surface and a second surface, a transparent electrode layer disposed over the first surface of the substrate, a short reduction layer disposed over the transparent electrode layer, an organic light-emitting element disposed over the short reduction layer and including at least one light-emitting layer and a charge injection layer disposed over the light emitting layer, a reflective electrode layer disposed over the charge injection layer and a light extraction enhancement structure disposed over the first or second surface of the substrate; wherein the short reduction layer is a transparent film having a through-thickness resistivity of 10.sup.-9 to 10.sup.2 ohm-cm.sup.2; wherein the reflective electrode layer includes Ag or Ag alloy containing more than 80% of Ag; and the total device size is larger than 10 times the substrate thickness.

Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Shinozaki, Motoya; Igarashi, Junta; Sato, Hideo; Ohno, Hideo

2018-04-01

We investigate free-layer size D dependence of effective anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions by homodyne-detected ferromagnetic resonance. The effective anisotropy field HK\\text{eff} monotonically increases with decreasing D for a device with the reference-layer size much larger than the free-layer size. In contrast, HK\\text{eff} does not increase in a monotonic manner for a device with the reference-layer size comparable to the free-layer size. We reveal that the difference can be explained by the variation of the anisotropy field in the vicinity of the device edge.

Investigation of multilayer magnetic domain lattice file

NASA Technical Reports Server (NTRS)

Torok, E. J.; Kamin, M.; Tolman, C. H.

1982-01-01

A theoretical and experimental investigation determined that current accessed self structured bubble memory devices have the potential of meeting projected data density and speed requirements. Device concepts analyzed include multilayer ferrimagnetic devices where the top layer contains a domain structure which defines the data location and the second contains the data. Current aperture and permalloy assisted current propagation devices were evaluated. Based on the result of this work more detailed device research was initiated. Detailed theoretical and experimental studies indicate that the difference in strip and threshold between a single bubble in the control layer and a double bubble which would exist in both the control layer and data layer is adequate to allow for detection of data. Detailed detector designs were investigated.

Magnetic nanofiber composite materials and devices using same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xing; Zhou, Ziyao

2017-04-11

A nonreciprocal device is described. It includes a housing, a waveguide layer and at least one layer of magnetic nanofiber composite. The magnetic nanofiber composite layer is made up of a polymer base layer, a dielectric matrix comprising magnetic nanofibers. The nanofibers have a high aspect ratio and wherein said dielectric matrix is embedded in the polymer base layer.

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

PubMed

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

DUV mask writer for BEOL 90-nm technology layers

NASA Astrophysics Data System (ADS)

Hong, Dongsung; Krishnan, Prakash; Coburn, Dianna; Jeewakhan, Nazneen; Xie, Shengqi; Broussard, Joshua; Ferguson, Bradley; Green, Kent G.; Buck, Peter; Jackson, Curt A.; Martinez, Larry

2003-12-01

Mask CD resolution and uniformity requirements for back end of line (BEOL) layers for the 90nm Technology Node push the capability of I-line mask writers; yet, do not require the capability offered by more expensive 50KeV ebeam mask writers. This suite of mask layers seems to be a perfect match for the capabilities of the DUV mask writing tools, which offer a lower cost option to the 50KeV platforms. This paper will evaluate both the mask and wafer results from all three platforms of mask writers (50KeV VSB,ETEC Alta 4300TM DUV laser and ETEC Alta 3500TM I-line laser) for a Cypress 90nm node Metal 1 layer, and demonstrate the benefits of the DUV platform with no change to OPC for this layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zanotto, Simone; Melloni, Andrea

By hybrid integration of plasmonic and dielectric waveguide concepts, it is shown that nearly perfect coherent absorption can be achieved in a co-propagating coupler geometry. First, the operating principle of the proposed device is detailed in the context of a more general 2 × 2 lossy coupler formalism. Then, it is shown how to tune the device in a wide region of possible working points, its broadband operation, and the tolerance to fabrication uncertainties. Finally, a complete picture of the electromagnetic modes inside the hybrid structure is analyzed, shining light onto the potentials which the proposed device holds in viewmore » of classical and quantum signal processing, nonlinear optics, polarization control, and sensing.« less

Efficient spin-filter and negative differential resistance behaviors in FeN4 embedded graphene nanoribbon device

NASA Astrophysics Data System (ADS)

Liu, N.; Liu, J. B.; Yao, K. L.; Ni, Y.; Wang, S. L.

2016-03-01

In this paper, we propose a new device of spintronics by embedding two FeN4 molecules into armchair graphene nanoribbon and sandwiching them between N-doped graphene nanoribbon electrodes. Our first-principle quantum transport calculations show that the device is a perfect spin filter with high spin-polarizations both in parallel configuration (PC) and antiparallel configuration (APC). Moreover, negative differential resistance phenomena are obtained for the spin-down current in PC, and the spin-up and spin-down currents in APC. These transport properties are explained by the bias-dependent evolution of molecular orbitals and the transmission spectra.

Experimental Measurement-Device-Independent Entanglement Detection

NASA Astrophysics Data System (ADS)

Nawareg, Mohamed; Muhammad, Sadiq; Amselem, Elias; Bourennane, Mohamed

2015-02-01

Entanglement is one of the most puzzling features of quantum theory and of great importance for the new field of quantum information. The determination whether a given state is entangled or not is one of the most challenging open problems of the field. Here we report on the experimental demonstration of measurement-device-independent (MDI) entanglement detection using witness method for general two qubits photon polarization systems. In the MDI settings, there is no requirement to assume perfect implementations or neither to trust the measurement devices. This experimental demonstration can be generalized for the investigation of properties of quantum systems and for the realization of cryptography and communication protocols.

Experimental Measurement-Device-Independent Entanglement Detection

PubMed Central

Nawareg, Mohamed; Muhammad, Sadiq; Amselem, Elias; Bourennane, Mohamed

2015-01-01

Entanglement is one of the most puzzling features of quantum theory and of great importance for the new field of quantum information. The determination whether a given state is entangled or not is one of the most challenging open problems of the field. Here we report on the experimental demonstration of measurement-device-independent (MDI) entanglement detection using witness method for general two qubits photon polarization systems. In the MDI settings, there is no requirement to assume perfect implementations or neither to trust the measurement devices. This experimental demonstration can be generalized for the investigation of properties of quantum systems and for the realization of cryptography and communication protocols. PMID:25649664

Study of the microstructure and mechanical properties of white clam shell.

PubMed

Liang, Yunhong; Zhao, Qian; Li, Xiujuan; Zhang, Zhihui; Ren, Luquan

2016-08-01

The microstructure and mechanical properties of white clam shell were investigated, respectively. It can be divided into horny layer, prismatic layer and nacreous layer. Crossed-lamellar structure was the microstructural characteristic. The extension direction of lamellae in prismatic layer was different from that in nacreous layer, which formed an angle on the interface between prismatic layer and nacreous layer. The phase component of three layers was CaCO3 with crystallization morphology of aragonite, which confirmed the crossed-lamellar structural characteristic. White calm shell exhibited perfect mechanical properties. The microhardness values of three layers were 273HV, 240HV and 300HV, respectively. The average values of flexure and compression strength were 110.2MPa and 80.1MPa, respectively. The macroscopical cracks crossed the lamellae and finally terminated within the length range of about 80μm. It was the microstructure characteristics, the angle on the interface between prismatic and nacreous layer and the hardness diversity among the different layers that enhanced mechanical properties of white calm shell. Copyright © 2016 Elsevier Ltd. All rights reserved.

Nonlinear control of absorption in one-dimensional photonic crystal with graphene-based defect.

PubMed

Vincenti, M A; de Ceglia, D; Grande, M; D'Orazio, A; Scalora, M

2013-09-15

Perfect, narrow-band absorption is achieved in an asymmetric 1D photonic crystal with a monolayer graphene defect. Thanks to the large third-order nonlinearity of graphene and field localization in the defect layer we demonstrate the possibility to achieve controllable, saturable absorption for the pump frequency.

Multiscale Modeling of Non-crystalline Ceramics (Glass)

DTIC Science & Technology

2013-03-01

of infinite regions using a perfectly matched layer, SEM XII Congress & Exposition on Experimental and Applied Mechanics, May, 2012, Costa Mesa , CA...MCCAULEY (10 HCS) P PLOSTINS P BAKER RDRL WML J NEWILL M ZOLTOSKI RDRL WML B I BATYREV (1 HC) S IZVYEKOV (1 HC) B RICE (1 HC) R PESCE RODRIGUEZ D TAYLOR N

Materials and methods for the preparation of nanocomposites

DOEpatents

Talapin, Dmitri V.; Kovalenko, Maksym V.; Lee, Jong-Soo; Jiang, Chengyang

2016-05-24

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

Approaching perfect absorption of monolayer molybdenum disulfide at visible wavelengths using critical coupling.

PubMed

Jiang, Xiaoyun; Wang, Tao; Xiao, Shuyuan; Yan, Xicheng; Cheng, Le; Zhong, Qingfang

2018-08-17

A simple perfect absorption structure is proposed to achieve the high efficiency light absorption of monolayer molybdenum disulfide (MoS 2 ) by the critical coupling mechanism of guided resonances. The results of numerical simulation and theoretical analysis show that the light absorption in this atomically thin layer can be as high as 98.3% at the visible wavelengths, which is over 12 times more than that of a bare monolayer MoS 2 . In addition, the operating wavelength can be tuned flexibly by adjusting the radius of the air hole and the thickness of the dielectric layers, which is of great practical significance to improve the efficiency and selectivity of the absorption in monolayer MoS 2 . The novel idea of using critical coupling to enhance the light-MoS 2 interaction can be also adopted in other atomically thin materials. The meaningful improvement and tunability of the absorption in monolayer MoS 2 provides a good prospect for the realization of high-performance MoS 2 -based optoelectronic applications, such as photodetection and photoluminescence.

Frequency domain finite-element and spectral-element acoustic wave modeling using absorbing boundaries and perfectly matched layer

NASA Astrophysics Data System (ADS)

Rahimi Dalkhani, Amin; Javaherian, Abdolrahim; Mahdavi Basir, Hadi

2018-04-01

Wave propagation modeling as a vital tool in seismology can be done via several different numerical methods among them are finite-difference, finite-element, and spectral-element methods (FDM, FEM and SEM). Some advanced applications in seismic exploration benefit the frequency domain modeling. Regarding flexibility in complex geological models and dealing with the free surface boundary condition, we studied the frequency domain acoustic wave equation using FEM and SEM. The results demonstrated that the frequency domain FEM and SEM have a good accuracy and numerical efficiency with the second order interpolation polynomials. Furthermore, we developed the second order Clayton and Engquist absorbing boundary condition (CE-ABC2) and compared it with the perfectly matched layer (PML) for the frequency domain FEM and SEM. In spite of PML method, CE-ABC2 does not add any additional computational cost to the modeling except assembling boundary matrices. As a result, considering CE-ABC2 is more efficient than PML for the frequency domain acoustic wave propagation modeling especially when computational cost is high and high-level absorbing performance is unnecessary.

Transition Effects on Heating in the Wake of a Blunt Body

NASA Technical Reports Server (NTRS)

Hollis, Brian R.; Perkins, John N.

1997-01-01

A series of aerodynamic heating tests was conducted on a 70-deg sphere-cone planetary entry vehicle model in a Mach 10 perfect-gas wind tunnel at freestream Reynolds numbers based on diameter of 8.23x104 to 3.15x105. Surface heating distributions were determined from temperature time-histories measured on the model and on its support sting using thin-film resistance gages. The experimental heating data were compared to computations made using an axisymmetric/2D, laminar, perfect-gas Navier-Stokes solver. Agreement between computational and experimental heating distributions to within, or slightly greater than, the experimental uncertainty was obtained on the forebody and afterbody of the entry vehicle as well as on the sting upstream of the free-shear-layer reattachment point. However, the distributions began to diverge near the reattachment point, with the experimental heating becoming increasingly greater than the computed heating with distance downstream from the reattachment point. It was concluded that this divergence was due to transition of the wake free shear layer just upstream of the reattachment point on the sting.

Design of a metasurface-based dual-band Terahertz perfect absorber with very high Q-factors for sensing applications

NASA Astrophysics Data System (ADS)

Janneh, M.; De Marcellis, A.; Palange, E.; Tenggara, A. T.; Byun, D.

2018-06-01

We report on a novel very high Q-factor dual-band Terahertz perfect absorber composed of a metasurface located on top of a flexible polyimide spacer deposited on a silver ground layer. The metasurface is a 2D-array of plasmonic nanoantennas with the shape of two concentric square rings and a cylinder positioned at their centre. By performing numerical simulations, we studied the polarisation insensitive electromagnetic response of the absorber for incident angles varying from 0° up to ±30°. The two resonant modes centred at f1 = 1.80 THz and f2 = 2.26 THz have Q-factors Q(f1) = 120 and Q(f2) = 94 and absorption coefficients A(f1) = 99 . 8 % and A(f2) = 99 . 6%. Moreover, we investigated how the resonant mode frequencies change with the refractive index and thickness of transparent analytes adsorbed on the metasurface. In terms of the Refractive Index Units (RIU), we obtained sensitivities equal to 187.5 GHz/RIU and 360 GHz/RIU for the f1 and f2 resonance frequencies, respectively, and figure of merits up to FOM = 19 . 1 and FOM∗ = 431. These results make the dual-band absorber to be employed as a sensing device able to detect the presence and/or the physical/chemical modifications of the adsorbed analytes. Moreover, we investigated the dependence of the sensitivity as a function of slight modifications of the metasurface nanoantenna shape, demonstrating that a more homogeneous distribution of the electric field intensity on the metasurface improves the sensitivity of the absorber without affecting the Q-factors.

Back contact to film silicon on metal for photovoltaic cells

DOEpatents

Branz, Howard M.; Teplin, Charles; Stradins, Pauls

2013-06-18

A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Postbuckling analysis of shear deformable composite flat panels taking into account geometrical imperfections

NASA Technical Reports Server (NTRS)

Librescu, L.; Stein, M.

1990-01-01

The effects of initial geometrical imperfections on the postbuckling response of flat laminated composite panels to uniaxial and biaxial compressive loading are investigated analytically. The derivation of the mathematical model on the basis of first-order transverse shear deformation theory is outlined, and numerical results for perfect and imperfect, single-layer and three-layer square plates with free-free, clamped-clamped, or free-clamped edges are presented in graphs and briefly characterized. The present approach is shown to be more accurate than analyses based on the classical Kirchhoff plate model.

Blunt body near wake flow field at Mach 6

NASA Technical Reports Server (NTRS)

Horvath, Thomas J.; McGinley, Catherine B.; Hannemann, Klaus

1996-01-01

Tests were conducted in a Mach 6 flow to examine the reattachment process of an axisymmetric free shear layer associated with the near wake of a 70 deg. half angle, spherically blunted cone with a cylindrical after body. Model angle of incidence was fixed at 0 deg. and free-stream Reynolds numbers based on body diameter ranged from 0.5 x 10(exp 6) to 4 x 10(exp 6). The sensitivity of wake shear layer transition on reattachment heating was investigated. The present perfect gas study was designed to compliment results obtained previously in facilities capable of producing real gas effects. The instrumented blunted cone model was designed primarily for testing in high enthalpy hypervelocity shock tunnels in both this country and abroad but was amenable for testing in conventional hypersonic blowdown wind tunnels as well. Surface heating rates were inferred from temperature - time histories from coaxial surface thermocouples on the model forebody and thin film resistance gages along the model base and cylindrical after body. General flow feature (bow shock, wake shear layer, and recompression shock) locations were visually identified by schlieren photography. Mean shear layer position and growth were determined from intrusive pitot pressure surveys. In addition, wake surveys with a constant temperature hot-wire anemometer were utilized to qualitatively characterize the state of the shear layer prior to reattachment. Experimental results were compared to laminar perfect gas predictions provided by a 3-D Navier Stokes code (NSHYP). Shear layer impingement on the instrumented cylindrical after body resulted in a localized heating maximum that was 21 to 29 percent of the forebody stagnation point heating. Peak heating resulting from the reattaching shear layer was found to be a factor of 2 higher than laminar predictions, which suggested a transitional shear layer. Schlieren flow visualization and fluctuating voltage time histories and spectra from the hot wire surveys across the shear layer substantiate this observation. The sensitivity of surface heating to forebody roughness was characterized for a reattaching shear layer. For example, at R(sub infinity), d = 4 x 10(exp 6), when the shear layer was transitional, the magnitude of peak heating from shear layer impingement was reduced by approximately 24 percent when transition grit was applied to the forebody. The spatial location of the local peak, however, remained unchanged.

Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

NASA Astrophysics Data System (ADS)

Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

2008-08-01

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

Measurement-Device-Independent Quantum Cryptography

NASA Astrophysics Data System (ADS)

Tang, Zhiyuan

Quantum key distribution (QKD) enables two legitimate parties to share a secret key even in the presence of an eavesdropper. The unconditional security of QKD is based on the fundamental laws of quantum physics. Original security proofs of QKD are based on a few assumptions, e.g., perfect single photon sources and perfect single-photon detectors. However, practical implementations of QKD systems do not fully comply with such assumptions due to technical limitations. The gap between theory and implementations leads to security loopholes in most QKD systems, and several attacks have been launched on sophisticated QKD systems. Particularly, the detectors have been found to be the most vulnerable part of QKD. Much effort has been put to build side-channel-free QKD systems. Solutions such as security patches and device-independent QKD have been proposed. However, the former are normally ad-hoc, and cannot close unidentified loopholes. The latter, while having the advantages of removing all assumptions on devices, is impractical to implement today. Measurement-device-independent QKD (MDI-QKD) turns out to be a promising solution to the security problem of QKD. In MDI-QKD, all security loopholes, including those yet-to-be discovered, have been removed from the detectors, the most critical part in QKD. In this thesis, we investigate issues related to the practical implementation and security of MDI-QKD. We first present a demonstration of polarization-encoding MDI-QKD. Taking finite key effect into account, we achieve a secret key rate of 0.005 bit per second (bps) over 10 km spooled telecom fiber, and a 1600-bit key is distributed. This work, together with other demonstrations, shows the practicality of MDI-QKD. Next we investigate a critical assumption of MDI-QKD: perfect state preparation. We apply the loss-tolerant QKD protocol and adapt it to MDI-QKD to quantify information leakage due to imperfect state preparation. We then present an experimental demonstration of MDI-QKD over 10 km and 40 km of spooled fiber, which for the first time considers the impact of inaccurate polarization state preparation on the secret key rate. This would not have been possible under previous security proofs, given the same amount of state preparation flaws.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures.

PubMed

Abhijith, T; Kumar, T V Arun; Reddy, V S

2017-03-03

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO 3 ) between two tris-(8-hydroxyquinoline)aluminum (Alq 3 ) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10 3 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO 3 layer thickness and its location in the Alq 3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO 3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

NASA Astrophysics Data System (ADS)

Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.

2017-03-01

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Substrate structures for InP-based devices

DOEpatents

Wanlass, Mark W.; Sheldon, Peter

1990-01-01

A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

A Smartphone Client-Server Teleradiology System for Primary Diagnosis of Acute Stroke

PubMed Central

2011-01-01

Background Recent advances in the treatment of acute ischemic stroke have made rapid acquisition, visualization, and interpretation of images a key factor for positive patient outcomes. We have developed a new teleradiology system based on a client-server architecture that enables rapid access to interactive advanced 2-D and 3-D visualization on a current generation smartphone device (Apple iPhone or iPod Touch, or an Android phone) without requiring patient image data to be stored on the device. Instead, a server loads and renders the patient images, then transmits a rendered frame to the remote device. Objective Our objective was to determine if a new smartphone client-server teleradiology system is capable of providing accuracies and interpretation times sufficient for diagnosis of acute stroke. Methods This was a retrospective study. We obtained 120 recent consecutive noncontrast computed tomography (NCCT) brain scans and 70 computed tomography angiogram (CTA) head scans from the Calgary Stroke Program database. Scans were read by two neuroradiologists, one on a medical diagnostic workstation and an iPod or iPhone (hereafter referred to as an iOS device) and the other only on an iOS device. NCCT brain scans were evaluated for early signs of infarction, which includes early parenchymal ischemic changes and dense vessel sign, and to exclude acute intraparenchymal hemorrhage and stroke mimics. CTA brain scans were evaluated for any intracranial vessel occlusion. The interpretations made on an iOS device were compared with those made at a workstation. The total interpretation times were recorded for both platforms. Interrater agreement was assessed. True positives, true negatives, false positives, and false negatives were obtained, and sensitivity, specificity, and accuracy of detecting the abnormalities on the iOS device were computed. Results The sensitivity, specificity, and accuracy of detecting intraparenchymal hemorrhage were 100% using the iOS device with a perfect interrater agreement (kappa = 1). The sensitivity, specificity, and accuracy of detecting acute parenchymal ischemic change were 94.1%, 100%, and 98.09% respectively for reader 1 and 97.05%, 100%, and 99.04% for reader 2 with nearly perfect interrater agreement (kappa = .8). The sensitivity, specificity, and accuracy of detecting dense vessel sign were 100%, 95.4%, and 96.19% respectively for reader 1 and 72.2%, 100%, and 95.23% for reader 2 using the iOS device with a good interrater agreement (kappa = .69). The sensitivity, specificity, and accuracy of detecting vessel occlusion on CT angiography scans were 94.4%, 100%, and 98.46% respectively for both readers using the iOS device, with perfect interrater agreement (kappa = 1). No significant difference (P < .05) was noted in the interpretation time between the workstation and iOS device. Conclusion The smartphone client-server teleradiology system appears promising and may have the potential to allow urgent management decisions in acute stroke. However, this study was retrospective, involved relatively few patient studies, and only two readers. Generalizing conclusions about its clinical utility, especially in other diagnostic use cases, should not be made until additional studies are performed. PMID:21550961

A smartphone client-server teleradiology system for primary diagnosis of acute stroke.

PubMed

Mitchell, J Ross; Sharma, Pranshu; Modi, Jayesh; Simpson, Mark; Thomas, Monroe; Hill, Michael D; Goyal, Mayank

2011-05-06

Recent advances in the treatment of acute ischemic stroke have made rapid acquisition, visualization, and interpretation of images a key factor for positive patient outcomes. We have developed a new teleradiology system based on a client-server architecture that enables rapid access to interactive advanced 2-D and 3-D visualization on a current generation smartphone device (Apple iPhone or iPod Touch, or an Android phone) without requiring patient image data to be stored on the device. Instead, a server loads and renders the patient images, then transmits a rendered frame to the remote device. Our objective was to determine if a new smartphone client-server teleradiology system is capable of providing accuracies and interpretation times sufficient for diagnosis of acute stroke. This was a retrospective study. We obtained 120 recent consecutive noncontrast computed tomography (NCCT) brain scans and 70 computed tomography angiogram (CTA) head scans from the Calgary Stroke Program database. Scans were read by two neuroradiologists, one on a medical diagnostic workstation and an iPod or iPhone (hereafter referred to as an iOS device) and the other only on an iOS device. NCCT brain scans were evaluated for early signs of infarction, which includes early parenchymal ischemic changes and dense vessel sign, and to exclude acute intraparenchymal hemorrhage and stroke mimics. CTA brain scans were evaluated for any intracranial vessel occlusion. The interpretations made on an iOS device were compared with those made at a workstation. The total interpretation times were recorded for both platforms. Interrater agreement was assessed. True positives, true negatives, false positives, and false negatives were obtained, and sensitivity, specificity, and accuracy of detecting the abnormalities on the iOS device were computed. The sensitivity, specificity, and accuracy of detecting intraparenchymal hemorrhage were 100% using the iOS device with a perfect interrater agreement (kappa=1). The sensitivity, specificity, and accuracy of detecting acute parenchymal ischemic change were 94.1%, 100%, and 98.09% respectively for reader 1 and 97.05%, 100%, and 99.04% for reader 2 with nearly perfect interrater agreement (kappa=.8). The sensitivity, specificity, and accuracy of detecting dense vessel sign were 100%, 95.4%, and 96.19% respectively for reader 1 and 72.2%, 100%, and 95.23% for reader 2 using the iOS device with a good interrater agreement (kappa=.69). The sensitivity, specificity, and accuracy of detecting vessel occlusion on CT angiography scans were 94.4%, 100%, and 98.46% respectively for both readers using the iOS device, with perfect interrater agreement (kappa=1). No significant difference (P<.05) was noted in the interpretation time between the workstation and iOS device. The smartphone client-server teleradiology system appears promising and may have the potential to allow urgent management decisions in acute stroke. However, this study was retrospective, involved relatively few patient studies, and only two readers. Generalizing conclusions about its clinical utility, especially in other diagnostic use cases, should not be made until additional studies are performed. ©J Ross Mitchell, Pranshu Sharma, Jayesh Modi, Mark Simpson, Monroe Thomas, Michael D. Hill, Mayank Goyal.

Optical sensors and multisensor arrays containing thin film electroluminescent devices

DOEpatents

Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

2001-12-18

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

PubMed

Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

2013-10-09

We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

TEMPO/viologen electrochemical heterojunction for diffusion-controlled redox mediation: a highly rectifying bilayer-sandwiched device based on cross-reaction at the interface between dissimilar redox polymers.

PubMed

Tokue, Hiroshi; Oyaizu, Kenichi; Sukegawa, Takashi; Nishide, Hiroyuki

2014-03-26

A couple of totally reversible redox-active molecules, which are different in redox potentials, 2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO) and viologen (V(2+)), were employed to give rise to a rectified redox conduction effect. Single-layer and bilayer devices were fabricated using polymers containing these sites as pendant groups per repeating unit. The devices were obtained by sandwiching the redox polymer layer(s) with indium tin oxide (ITO)/glass and Pt foil electrodes. Electrochemical measurements of the single-layer device composed of polynorbornene-bearing TEMPO (PTNB) exhibited a diffusion-limited current-voltage response based on the TEMPO(+)/TEMPO exchange reaction, which was almost equivalent to a redox gradient through the PTNB layer depending upon the thickness. The bilayer device gave rise to the current rectification because of the thermodynamically favored cross-reaction between TEMPO(+) and V(+) at the polymer/polymer interface. A current-voltage response obtained for the bilayer device demonstrated a two-step diffusion-limited current behavior as a result of the concurrent V(2+)/V(+) and V(+)/V(0) exchange reactions according to the voltage and suggested that the charge transport process through the device was most likely to be rate-determined by a redox gradient in the polymer layer. Current collection experiments revealed a charge transport balance throughout the device, as a result of the electrochemical stability and robustness of the polymers in both redox states.

Method for producing high energy electroluminescent devices

DOEpatents

Meyerson, Bernard S.; Scott, Bruce A.; Wolford, Jr., Donald J.

1992-09-29

A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

Solar cells

DOEpatents

Peumans, Peter; Uchida, Soichi; Forrest, Stephen R.

2013-06-18

Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.

Organic electronic devices via interface engineering

NASA Astrophysics Data System (ADS)

Xu, Qianfei

This dissertation focuses on interface engineering and its influence on organic electronic devices. A comprehensive review of interface studies in organic electronic devices is presented in Chapter 1. By interface engineering at the cathode contact, an ultra-high efficiency green polymer light emitting diode is demonstrated in Chapter 2. The interface modification turns out to be solution processable by using calcium acetylacetonate, donated by Ca(acac)2. The device structure is Induim Tin Oxide (ITO)/3,4-polyethylenedioxythiophene-polystyrene-sulfonate (PEDOT)/Green polyfluorene/Ca(acac) 2/Al. Based on this structure, we obtained device efficiencies as high as 28 cd/A at 2650 cd/m2, which is about a 3 times improvement over previous devices. The mechanism of this nano-layer has been studied by I-L-V measurements, photovoltaic measurements, XPS/UPS studies, impedance measurements as well as transient EL studies. The interfacial layer plays a crucial role for the efficiency improvement. It is believed to work as a hole blocking layer as well as an electron injection layer. Meanwhile, a systematic study on ITO electrodes is also carried out in Chapter 4. By engineering the interface at ITO electrode, the device lifetime has been improved. In Chapter 5, very bright white emission PLEDs are fabricated based on blue polyfluorene (PF) doped with 1 wt% 6, 8, 15, 17-tetraphyenyl-1.18, 4.5, 9.10, 13.14-tetrabenzoheptacene (TBH). The maximum luminance exceeds 20,000 cd/m2. The maximum luminance efficiency is 3.55 cd/A at 4228 cd/m2 while the maximum power efficiency is 1.6 lm/W at 310 cd/m2. The white color is achieved by an incomplete energy transfer from blue PF to TBH. The devices show super stable CIE coordinates as a function of current density. The interface engineering is also applied to memory devices. In Chapter 6, a novel nonvolatile memory device is fabricated by inserting a buffer layer at the anode contact. Devices with the structure of Cu/Buffer-layer/organic layer/Cu show very attractive electrical bi-stability. The switching mechanism is believed to origin from by the different copper ion concentrations in the organic layer. This opens up a promising way to achieve high-performance organic electronic devices.

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

PubMed

Yoon, Changjoon; Jeon, Youngin; Yun, Junggwon; Kim, Sangsig

2012-01-01

Arrayed Si nanowire (NW)-based nano-floating gate memory (NFGM) devices with Pt nanoparticles (NPs) embedded in Al2O3 gate layers are successfully constructed on flexible plastics by top-down approaches. Ten arrayed Si NW-based NFGM devices are positioned on the first level. Cross-linked poly-4-vinylphenol (PVP) layers are spin-coated on them as isolation layers between the first and second level, and another ten devices are stacked on the cross-linked PVP isolation layers. The electrical characteristics of the representative Si NW-based NFGM devices on the first and second levels exhibit threshold voltage shifts, indicating the trapping and detrapping of electrons in their NPs nodes. They have an average threshold voltage shift of 2.5 V with good retention times of more than 5 x 10(4) s. Moreover, most of the devices successfully retain their electrical characteristics after about one thousand bending cycles. These well-arrayed and stacked Si NW-based NFGM devices demonstrate the potential of nanowire-based devices for large-scale integration.

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Photovoltaic devices comprising zinc stannate buffer layer and method for making

DOEpatents

Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

2001-01-01

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinemann, M. D.; van Hest, M. F. A. M.; Contreras, M.

Cu(In,Ga)Se2 (CIGS) solar cells in superstrate configuration promise improved light management and higher stability compared to substrate devices, but they have yet to deliver comparable power conversion efficiencies (PCEs). Chemical reactions between the CIGS layer and the front contact were shown in the past to deteriorate the p-n junction in superstrate devices, which led to lower efficiencies compared to the substrate-type devices. This work aims to solve this problem by identifying a buffer layer between the CIGS layer and the front contact, acting as the electron transport layer, with an optimized electron affinity, doping density and chemical stability. Using combinatorialmore » material exploration we identified amorphous gallium oxide (a-GaOx) as a potentially suitable buffer layer material. The best results were obtained for a-GaOx with an electron affinity that was found to be comparable to that of CIGS. Based on the results of device simulations, it is assumed that detrimental interfacial acceptor states are present at the interface between CIGS and a-GaOx. However, these initial experiments indicate the potential of a-GaOx in this application, and how to reach performance parity with substrate devices, by further increase of its n-type doping density.« less

Organic light emitting device architecture for reducing the number of organic materials

DOEpatents

D'Andrade, Brian [Westampton, NJ; Esler, James [Levittown, PA

2011-10-18

An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

Relaxation of the accelerating-gas boundary layer to the test-gas boundary layer on a flat plate in an expansion tube

NASA Technical Reports Server (NTRS)

Gupta, R. N.; Trimpi, R. L.

1973-01-01

An analytic investigation of the relaxation of the accelerating-gas boundary layer to the test-gas boundary layer over a flat plate mounted in an expansion tube has been conducted. In this treatment, nitrogen has been considered as the test gas and helium as the accelerating gas. The problem is analyzed in two conically similar limits: (1) when the time lag between the arrival of the shock and the interface at the leading edge of the plate is very large, and (2) when this time lag is negligible. The transient laminar boundary-layer equations of a perfect binary-gas mixture are taken as the flow governing equations. These coupled equations have been solved numerically by Gauss-Seidel line-relaxation method. The results predict the transient behavior as well as the time required for an all-helium accelerating-gas boundary layer to relax to an all-nitrogen boundary layer.

Luneburg lens in silicon photonics.

PubMed

Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

2011-03-14

The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

NASA Technical Reports Server (NTRS)

Danchenko, V. (Inventor)

1974-01-01

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Enhanced spatial near-infrared modulation of graphene-loaded perfect absorbers using plasmonic nanoslits.

PubMed

Cai, Yijun; Zhu, Jinfeng; Liu, Qing Huo; Lin, Timothy; Zhou, Jianyang; Ye, Longfang; Cai, Zhiping

2015-12-14

Modulating spatial near-infrared light for ultra-compact electro-optic devices is a critical issue in optical communication and imaging applications. To date, spatial near-infrared modulators based on graphene have been reported, but they showed limited modulation effects due to the relatively weak light-graphene interaction. In combination with graphene and metallic nanoslits, we design a kind of ultrathin near-infrared perfect absorber with enhanced spatial modulation effects and independence on a wide range of incident angles. The modulated spectral shift of central wavelength is up to 258.2 nm in the near-infrared range, which is more promising in applications than state-of-the-art devices. The modulation enhancement is attributed to the plasmonic nanoslit mode, in which the optical electric field is highly concentrated in the deep subwavelength scale and the light-graphene interaction is significantly strengthened. The physical insight is deeply revealed by a combination of equivalent circuit and electromagnetic field analysis. The design principles are not only crucial for spatial near-infrared modulators, but also provide a key guide for developing active near-infrared patch nanoantennas based on graphene.

Degradation of Bilayer Organic Light-Emitting Diodes Studied by Impedance Spectroscopy.

PubMed

Sato, Shuri; Takata, Masashi; Takada, Makoto; Naito, Hiroyoshi

2016-04-01

The degradation of bilayer organic light-emitting diodes (OLEDs) with a device structure of N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) (hole transport layer) and tris-(8-hydroxyquinolate)aluminum (Alq3) (emissive layer and electron transport layer) has been studied by impedance spectroscopy and device simulation. Two modulus peaks are found in the modulus spectra of the OLEDs below the electroluminescence threshold. After aging of the OLEDs, the intensity of electroluminescence is degraded and the modulus peak due to the Alq3 layer is shifted to lower frequency, indicating that the resistance of the Alq3 layer is increased. Device simulation reveals that the increase in the resistance of the Alq3 layer is due to the decrease in the electron mobility in the Alq3 layer.

Magnet-assisted device-level alignment for the fabrication of membrane-sandwiched polydimethylsiloxane microfluidic devices

NASA Astrophysics Data System (ADS)

Lu, J.-C.; Liao, W.-H.; Tung, Y.-C.

2012-07-01

Polydimethylsiloxane (PDMS) microfluidic device is one of the most essential techniques that advance microfluidics research in recent decades. PDMS is broadly exploited to construct microfluidic devices due to its unique and advantageous material properties. To realize more functionalities, PDMS microfluidic devices with multi-layer architectures, especially those with sandwiched membranes, have been developed for various applications. However, existing alignment methods for device fabrication are mainly based on manual observations, which are time consuming, inaccurate and inconsistent. This paper develops a magnet-assisted alignment method to enhance device-level alignment accuracy and precision without complicated fabrication processes. In the developed alignment method, magnets are embedded into PDMS layers at the corners of the device. The paired magnets are arranged in symmetric positions at each PDMS layer, and the magnetic attraction force automatically pulls the PDMS layers into the aligned position during assembly. This paper also applies the method to construct a practical microfluidic device, a tunable chaotic micromixer. The results demonstrate the successful operation of the device without failure, which suggests the accurate alignment and reliable bonding achieved by the method. Consequently, the fabrication method developed in this paper is promising to be exploited to construct various membrane-sandwiched PDMS microfluidic devices with more integrated functionalities to advance microfluidics research.

Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

2017-06-01

A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

NASA Astrophysics Data System (ADS)

Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.

2017-07-01

A high quality Al2O3 layer is developed to achieve high performance in top-gate MoS2 transistors. Compared with top-gate MoS2 field effect transistors on a SiO2 layer, the intrinsic mobility and subthreshold slope were greatly improved in high-k backside layer devices. A forming gas anneal is found to enhance device performance due to a reduction in the charge trap density of the backside dielectric. The major improvements in device performance are ascribed to the forming gas anneal and the high-k dielectric screening effect of the backside Al2O3 layer. Top-gate devices built upon these stacks exhibit a near-ideal subthreshold slope of ˜69 mV/dec and a high Y-Function extracted intrinsic carrier mobility (μo) of 145 cm2/V.s, indicating a positive influence on top-gate device performance even without any backside bias.

Tungsten bridge for the low energy ignition of explosive and energetic materials

DOEpatents

Benson, David A.; Bickes, Jr., Robert W.; Blewer, Robert S.

1990-01-01

A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.

Thermally induced nonlinear optical absorption in metamaterial perfect absorbers

NASA Astrophysics Data System (ADS)

Guddala, Sriram; Kumar, Raghwendra; Ramakrishna, S. Anantha

2015-03-01

A metamaterial perfect absorber consisting of a tri-layer (Al/ZnS/Al) metal-dielectric-metal system with top aluminium nano-disks was fabricated by laser-interference lithography and lift-off processing. The metamaterial absorber had peak resonant absorbance at 1090 nm and showed nonlinear absorption for 600ps laser pulses at 1064 nm wavelength. A nonlinear saturation of reflectance was measured to be dependent on the average laser power incident and not the peak laser intensity. The nonlinear behaviour is shown to arise from the heating due to the absorbed radiation and photo-thermal changes in the dielectric properties of aluminium. The metamaterial absorber is seen to be damage resistant at large laser intensities of 25 MW/cm2.

Design of a five-band terahertz perfect metamaterial absorber using two resonators

NASA Astrophysics Data System (ADS)

Meng, Tianhua; Hu, Dan; Zhu, Qiaofen

2018-05-01

We present a polarization-insensitive five-band terahertz perfect metamaterial absorber composed of two metallic circular rings and a metallic ground film separated by a dielectric layer. The calculated results show that the absorber has five distinctive absorption bands whose peaks are greater than 99% on average. The physical origin of the absorber originates from the combination of dipolar, hexapolar, and surface plasmon resonance of the patterned metallic structure, which is different from the work mechanism of previously reported absorbers. In addition, the influence of the structural parameters on the absorption spectra is analyzed to further confirm the origin of the five-band absorption peaks. The proposed absorber has potential applications in terahertz imaging, refractive index sensing, and material detecting.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

First-Principles Study on the Tensile Properties and Failure Mechanism of the CoSb3/Ti Interface

NASA Astrophysics Data System (ADS)

She, Wuchang; Liu, Qiwen; Mei, Hai; Zhai, Pengcheng; Li, Jun; Liu, Lisheng

2018-06-01

The mechanical properties of the CoSb3/Ti interface play a critical role in the application of thermoelectric devices. To understand the failure mechanism of the CoSb3(001)/Ti(01 \\bar{1} 0) interface, we investigated its response during tensile deformations by first-principles calculations. By comparison with the result between the perfect interface and the interface after atomic migration, we find that the atomic migration at the interface has an obvious influence on the mechanical properties. The tensile tests indicate the ideal tensile stress of the CoSb3/Ti interface after atomic migration decreases by about 8.1% as compared to that of the perfect one. The failure mechanism of the perfect CoSb3/Ti interface is different from that of the migrated CoSb3/Ti interface. For the perfect CoSb3/Ti interface, the breakage of the Co-Sb bond leads to the failure of the system. For the CoSb3/Ti interface after atomic migration, the breakage of the Sb-Sb bond leads to the failure of the system. This is mainly because the new ionic Ti-Sb bonds make the electrons redistributed and weaken the stiffness of the Co-Sb bonds.

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C. Edwin; Benson, David K.; Ruth, Marta R.

1987-01-01

A solid-state transition metal oxide device comprising a plurality of lay having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Energy consumption for shortcuts to adiabaticity

NASA Astrophysics Data System (ADS)

Torrontegui, E.; Lizuain, I.; González-Resines, S.; Tobalina, A.; Ruschhaupt, A.; Kosloff, R.; Muga, J. G.

2017-08-01

Shortcuts to adiabaticity let a system reach the results of a slow adiabatic process in a shorter time. We propose to quantify the "energy cost" of the shortcut by the energy consumption of the system enlarged by including the control device. A mechanical model where the dynamics of the system and control device can be explicitly described illustrates that a broad range of possible values for the consumption is possible, including zero (above the adiabatic energy increment) when friction is negligible and the energy given away as negative power is stored and reused by perfect regenerative braking.

Spin-polarized transport in multiterminal silicene nanodevices

NASA Astrophysics Data System (ADS)

Xu, Ning

2018-01-01

The spin-polarized transport properties of multiterminal silicene nanodevices are studied using the tight binding model and Landauer-Buttier approach. We propose a four-terminal †-shaped junction device and two types of three-terminal T-shaped junction devices, which are made of the crossing of a zigzag and an armchair silicene nanoribbon. If the electrons are injected into the metallic lead, the near-perfect spin polarization with 100% around the Fermi energy can be achieved easily at the other semiconducting leads. Thus the multiterminal silicene nanodevices can act as controllable spin filters.

Methods and systems for in-situ electroplating of electrodes

DOEpatents

Zappi, Guillermo Daniel; Zarnoch, Kenneth Paul; Huntley, Christian Andrew; Swalla, Dana Ray

2015-06-02

The present techniques provide electrochemical devices having enhanced electrodes with surfaces that facilitate operation, such as by formation of a porous nickel layer on an operative surface, particularly of the cathode. The porous metal layer increases the surface area of the electrode, which may result in increasing the efficiency of the electrochemical devices. The formation of the porous metal layer is performed in situ, that is, after the assembly of the electrodes into an electrochemical device. The in situ process offers a number of advantages, including the ability to protect the porous metal layer on the electrode surface from damage during assembly of the electrochemical device. The enhanced electrode and the method for its processing may be used in any number of electrochemical devices, and is particularly well suited for electrodes in an electrolyzer useful for splitting water into hydrogen and oxygen.

Delamination Analysis of a Multilayered Two-Dimensional Functionally Graded Cantilever Beam

NASA Astrophysics Data System (ADS)

Rizov, V.

2017-11-01

Delamination fracture behaviour of a multilayered two-dimensional functionally graded cantilever beam is analyzed in terms of the strain energy release rate. The beam is made of an arbitrary number of layers. Perfect adhesion is assumed between layers. Each layer has individual thickness and material properties. Besides, the material is two-dimensional functionally graded in the cross-section of each layer. There is a delamination crack located arbitrary between layers. The beam is loaded by a bending moment applied at the free end of the lower crack arm. The upper crack arm is free of stresses. The solution to strain energy release rate derived is applied to investigate the influence of the crack location and the material gradient on the delamination fracture. The results obtained can be used to optimize the multilayered two-dimensional functionally graded beam structure with respect to the delamination fracture behaviour.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hagglund, Carl; Zeltzer, Gabriel; Ruiz, Ricardo

In this study, when optical resonances interact strongly, hybridized modes are formed with mixed properties inherited from the basic modes. Strong coupling therefore tends to equalize properties such as damping and oscillator strength of the spectrally separate resonance modes. This effect is here shown to be very useful for the realization of near-perfect dual-band absorption with ultrathin (~10 nm) layers in a simple geometry. Absorber layers are constructed by atomic layer deposition of the heavy-damping semiconductor tin monosulfide (SnS) onto a two-dimensional gold nanodot array. In combination with a thin (55 nm) SiO 2 spacer layer and a highly reflectivemore » Al film on the back, a semiopen nanocavity is formed. The SnS-coated array supports a localized surface plasmon resonance in the vicinity of the lowest order antisymmetric Fabry–Perot resonance of the nanocavity. Very strong coupling of the two resonances is evident through anticrossing behavior with a minimum peak splitting of 400 meV, amounting to 24% of the plasmon resonance energy. The mode equalization resulting from this strong interaction enables simultaneous optical impedance matching of the system at both resonances and thereby two near-perfect absorption peaks, which together cover a broad spectral range. When paired with the heavy damping from SnS band-to-band transitions, this further enables approximately 60% of normal incident solar photons with energies exceeding the band gap to be absorbed in the 10 nm SnS coating. Thereby, these results establish a distinct relevance of strong coupling phenomena to efficient, nanoscale photovoltaic absorbers and more generally for fulfilling a specific optical condition at multiple spectral positions.« less

Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

DOEpatents

Norman, Andrew G; Ptak, Aaron J

2013-08-13

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

Meta-structure and tunable optical device including the same

DOEpatents

Han, Seunghoon; Papadakis, Georgia Theano; Atwater, Harry

2017-12-26

A meta-structure and a tunable optical device including the same are provided. The meta-structure includes a plurality of metal layers spaced apart from one another, an active layer spaced apart from the plurality of metal layers and having a carrier concentration that is tuned according to an electric signal applied to the active layer and the plurality of metal layers, and a plurality of dielectric layers spaced apart from one another and each having one surface contacting a metal layer among the plurality of metal layers and another surface contacting the active layer.

Method of fabricating a back-contact solar cell and device thereof

DOEpatents

Li, Bo; Smith, David; Cousins, Peter

2014-07-29

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Method of fabricating a back-contact solar cell and device thereof

DOEpatents

Li, Bo; Smith, David; Cousins, Peter

2016-08-02

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Designing a Novel Polymer Electrolyte for Improving the Electrode/Electrolyte Interface in Flexible All-Solid-State Electrical Double-Layer Capacitors.

PubMed

Wang, Jeng-An; Lu, Yi-Ting; Lin, Sheng-Chi; Wang, Yu-Sheng; Ma, Chen-Chi M; Hu, Chi-Chang

2018-05-30

A novel copolymer, polyurethane-poly(acrylic acid) (PAA), is successfully synthesized from poly(acrylic acid) (PAA) backbone cross-linked with waterborne polyurethane (WPU). This sticky polymer, which is neutralized with 1 M KOH and then soaked in 1 M KOH (denoted as WPU-PAAK-K), provides an ionic conductivity greater than 10 -2 S cm -1 and acts as a gel electrolyte perfectly improving the electrode/electrolyte interfaces in a flexible all-solid-state electrical double-layer capacitor (EDLC). The PAA backbone chains in the copolymer increase the amount of carboxyl groups and promote the segmental motion. The carboxyl groups enhance the water-uptake capacity, which facilitates the ion transport and promotes the ionic conductivity. The cross-linked agent, WPU chains, effectively maintains the rich water content and provides mechanical stickiness to bind two electrodes together. An acid-treated carbon paper (denoted as ACP) combining with such a gel polymer electrolyte demonstrates excellent capacitive behavior with a high areal capacitance of 211.6 mF cm -2 at 10 mV s -1 . A full cell consisting of ACP/WPU-PAAK-K/ACP displays a low equivalent series resistance of 0.44 Ω from the electrochemical impedance spectroscopic results. An all-solid-state ACP/WPU-PAAK-K/ACP EDLC provides an areal specific capacitance of 94.6 mF cm -2 at 1 mA cm -2 . This device under 180° bending shows a capacitance retention over 90%, revealing its remarkable flexibility.

Biaxially textured articles formed by plastic deformation

DOEpatents

Goyal, Amit

2001-01-01

A method of preparing a biaxially textured article comprises the steps of providing a metal preform, coating or laminating the preform with a metal layer, deforming the layer to a sufficient degree, and rapidly recrystallizing the layer to produce a biaxial texture. A superconducting epitaxial layer may then be deposited on the biaxial texture. In some embodiments the article further comprises buffer layers, electromagnetic devices or electro-optical devices.

Method for making biaxially textured articles by plastic deformation

DOEpatents

Goyal, Amit

2002-01-01

A method of preparing a biaxially textured article comprises the steps of providing a metal preform, coating or laminating the preform with a metal layer, deforming the layer to a sufficient degree, and rapidly recrystallizing the layer to produce a biaxial texture. A superconducting epitaxial layer may then be deposited on the biaxial texture. In some embodiments the article further comprises buffer layers, electromagnetic devices or electro-optical devices.

Electrostatic MEMS devices with high reliability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

A SiC LDMOS with electric field modulation by a step compound drift region

NASA Astrophysics Data System (ADS)

Bao, Meng-tian; Wang, Ying; Yu, Cheng-hao; Cao, Fei

2018-07-01

In this paper, we propose a SiC LDMOS structure with a step compound drift region (SC-LDMOS). The proposed device has a compound drift region which consists of an n-type top layer, a step p-type middle layer and an n-type bottom layer. The step p-type middle layer can introduce two new electric field peaks and uniform the distribution of the electric field in the n-type top layer, which can modulate the surface electric field and improve the breakdown voltage of the proposed structure. In addition, the n-type bottom layer is applied under the heavy doping p-type middle layer，which contributes to realize the charge balance. Furthermore, it can also increase the doping concentration of the n-type top layer, which can decrease the on resistance of the proposed device. As a simulated result, the proposed device obtain a high BV of 976 V and a low Rsp,on of 7.74 mΩ·cm2. Compared with the conventional single REUSRF LDMOS and triple RESURF LDMOS, BV of proposed device is enhanced by 42.5% and 14.7%, respectively and Rsp,on is reduced by 37.3% and 30.9%, respectively. Meanwhile, the switching delays of the proposed device are significantly shorter than the conventional triple RESURF LDMOS.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Device-independent parallel self-testing of two singlets

NASA Astrophysics Data System (ADS)

Wu, Xingyao; Bancal, Jean-Daniel; McKague, Matthew; Scarani, Valerio

2016-06-01

Device-independent self-testing offers the possibility of certifying the quantum state and measurements, up to local isometries, using only the statistics observed by querying uncharacterized local devices. In this paper we study parallel self-testing of two maximally entangled pairs of qubits; in particular, the local tensor product structure is not assumed but derived. We prove two criteria that achieve the desired result: a double use of the Clauser-Horne-Shimony-Holt inequality and the 3 ×3 magic square game. This demonstrate that the magic square game can only be perfectly won by measuring a two-singlet state. The tolerance to noise is well within reach of state-of-the-art experiments.

Sintered silver joints via controlled topography of electronic packaging subcomponents

DOEpatents

Wereszczak, Andrew A.

2014-09-02

Disclosed are sintered silver bonded electronic package subcomponents and methods for making the same. Embodiments of the sintered silver bonded EPSs include topography modification of one or more metal surfaces of semiconductor devices bonded together by the sintered silver joint. The sintered silver bonded EPSs include a first semiconductor device having a first metal surface, the first metal surface having a modified topography that has been chemically etched, grit blasted, uniaxial ground and/or grid sliced connected to a second semiconductor device which may also include a first metal surface with a modified topography, a silver plating layer on the first metal surface of the first semiconductor device and a silver plating layer on the first metal surface of the second semiconductor device and a sintered silver joint between the silver plating layers of the first and second semiconductor devices which bonds the first semiconductor device to the second semiconductor device.

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

NASA Astrophysics Data System (ADS)

Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

2018-05-01

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

Die singulation method and package formed thereby

DOEpatents

Anderson, Robert C [Tucson, AZ; Shul, Randy J [Albuquerque, NM; Clews, Peggy J [Tijeras, NM; Baker, Michael S [Albuquerque, NM; De Boer, Maarten P [Albuquerque, NM

2012-08-07

A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.

Charge-coupled device for low background observations

NASA Technical Reports Server (NTRS)

Loh, Edwin D. (Inventor); Cheng, Edward S. (Inventor)

2002-01-01

A charge-coupled device with a low-emissivity metal layer located between a sensing layer and a substrate provides reduction in ghost images. In a typical charge-coupled device of a silicon sensing layer, a silicon dioxide insulating layer, with a glass substrate and a metal carrier layer, a near-infrared photon, not absorbed in the first pass, enters the glass substrate, reflects from the metal carrier, thereby returning far from the original pixel in its entry path. The placement of a low-emissivity metal layer between the glass substrate and the sensing layer reflects near infrared photons before they reach the substrate so that they may be absorbed in the silicon nearer the pixel of their points of entry so that the reflected ghost image is coincident with the primary image for a sharper, brighter image.

Electro-refractive photonic device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zortman, William A.; Watts, Michael R.

2015-06-09

The various technologies presented herein relate to phase shifting light to facilitate any of light switching, modulation, amplification, etc. Structures are presented where a second layer is juxtaposed between a first layer and a third layer with respective doping facilitating formation of p-n junctions at the interface between the first layer and the second layer, and between the second layer and the third layer. Application of a bias causes a carrier concentration change to occur at the p-n junctions which causes a shift in the effective refractive index per incremental change in an applied bias voltage. The effective refractive indexmore » enhancement can occur in both reverse bias and forward bias. The structure can be incorporated into a waveguide, an optical resonator, a vertical junction device, a horizontal junction device, a Mach-Zehnder interferometer, a tuneable optical filter, etc.« less

Versatile alignment layer method for new types of liquid crystal photonic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finnemeyer, V.; Bryant, D.; Lu, L.

2015-07-21

Liquid crystal photonic devices are becoming increasingly popular. These devices often present a challenge when it comes to creating a robust alignment layer in pre-assembled cells. In this paper, we describe a method of infusing a dye into a microcavity to produce an effective photo-definable alignment layer. However, previous research on such alignment layers has shown that they have limited stability, particularly against subsequent light exposure. As such, we further describe a method of utilizing a pre-polymer, infused into the microcavity along with the liquid crystal, to provide photostability. We demonstrate that the polymer layer, formed under ultraviolet irradiation ofmore » liquid crystal cells, has been effectively localized to a thin region near the substrate surface and provides a significant improvement in the photostability of the liquid crystal alignment. This versatile alignment layer method, capable of being utilized in devices from the described microcavities to displays, offers significant promise for new photonics applications.« less

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

PubMed

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershon, Talia S.; Gunawan, Oki; Haight, Richard A.

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage

DOEpatents

You, Chun-Yeol; Bader, Samuel D.

2001-01-01

A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.

Thermophotovoltaic energy conversion system having a heavily doped n-type region

DOEpatents

DePoy, David M.; Charache, Greg W.; Baldasaro, Paul F.

2000-01-01

A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

NASA Astrophysics Data System (ADS)

Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

2009-02-01

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Operational stability of electrophosphorescent devices containing p and n doped transport layers

NASA Astrophysics Data System (ADS)

D'Andrade, Brian W.; Forrest, Stephen R.; Chwang, Anna B.

2003-11-01

The operational stability of low-operating voltage p-i-n electrophosphorescent devices containing fac-tris(2-phenylpyridine) iridium as the emissive dopant is investigated. In these devices, Li-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) served as an n-type electron transport layer, or as an undoped hole blocking layer (HBL), and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane doped 4,4',4″-tris(3-methylphenylphenylamino) triphenylamine served as a p-type hole transport layer. The glass transition temperature of BPhen can be increased by the addition of aluminum(III)bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq), resulting in improved morphological stability, thereby reducing device degradation. When thermally stable BAlq was used as a HBL in both p-i-n and undoped devices, the extrapolated operational lifetime (normalized to an initial luminance of 100 cd/m2) of the p-i-n and undoped devices are 18 000 and 60 000 h, respectively, indicating that the presence of p and n dopants can accelerate device degradation.

Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima; Tripathi, Shweta; Chakrabarti, P.

2016-03-01

In this paper, structural, electrical and ultraviolet photodetection parameters of RF sputtered-ZnO/Si heterojunction diodes are analyzed. In this work, ZnO thin film was deposited on bare Si substrate as well as Si substrate coated with ultrathin ZnO seed layer to exhibit the effect of seed layer on device performance. AFM image of as-grown ZnO films have exhibited the uniform growth ZnO film over the whole Si substrate with average roughness of 3.2 nm and 2.83 nm for ZnO with and without seed layer respectively. Stronger peak intensity along (002) direction, as shown in XRD spectra confirm that ZnO film grown on ZnO seed layer is having more stable wurtzite structure. Ti/Al point contacts were deposited on top of the ZnO film and a layer of Al was deposited on bottom of Si substrate for using as ohmic contacts for further device characterization at dark and under UV light of 365 nm wavelength. This process is repeated for both the films sequentially. The photo-responsivity of our proposed devices is calculated as 0.34 A/W for seed layer-mediated devices and 0.26 A/W for devices without seed layer. These values are very high as compare to the reported value of photo-responsivity for same kind of ZnO/Si heterojunction device prototypes prepared by other techniques.

Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

PubMed

Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

2016-07-20

We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability.

Tungsten bridge for the low energy ignition of explosive and energetic materials

DOEpatents

Benson, D.A.; Bickes, R.W. Jr.; Blewer, R.S.

1990-12-11

A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose. 2 figs.

Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer

NASA Astrophysics Data System (ADS)

Ham, Jung Hoon; Oh, Do Hyun; Cho, Sung Hwan; Jung, Jae Hun; Kim, Tae Whan; Ryu, Eui Dock; Kim, Sang Wook

2009-03-01

Current-voltage (I-V) curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the I-V curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental I-V data.

The cell engineering construction and function evaluation of multi-layer biochip dialyzer.

PubMed

Zhu, Wen; Li, Jiwei; Liu, Jianfeng

2013-10-01

We report the fabrication and function evaluation of multi-layer biochip dialyzer. Such device may potentially be applied to the wearable hemodialysis systems. By merging the advantages of microfluidic chip technology with cell engineering, both functions of glomerular filtration and renal tubule physiological activity are integrated in the same device. This device is designed into a laminated structure, in which the chip number of the superimposed layer can be arbitrarily tailored in accordance with the requirements of dialysis capacity. We propose that such structure can overcome the obstacles of large size and detached structure of the traditional hollow fiber dialyzer. To construct this multilayer biochips dialyzer, two types of dialyzer device with two-layered and six-layered chips are assembled, respectively. Cell adhesion and proliferation on three different dialysis membrane materials under static and dynamic conditions are investigated and compared. The filtration capability, re-absorption function and excrete ammonia function of the resulting multi-layer biochip dialyzer are evaluated. The results reveal that the constructed device can perform higher filtration efficiency and also play a role of renal tubule. This methodology may be useful in developing "scaling down" artificial kidneys that can act as wearable or even implantable hemodialysis systems.

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

NASA Astrophysics Data System (ADS)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors

NASA Astrophysics Data System (ADS)

Hamai, Takamasa; Arai, Shunto; Minemawari, Hiromi; Inoue, Satoru; Kumai, Reiji; Hasegawa, Tatsuo

2017-11-01

Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]-benzothieno[3 ,2 -b ][1]benzothiophene (Ph -BTBT -C10 ) that involve inherent multiple semiconducting π -conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n )-dependent nonlinearity that becomes more evident at larger n (1 ≤n ≤15 ), demonstrating tunneling across multiple alkyl-chain layers. The n -dependent device mobility and four-probe measurements reveal that the alkyl-chain layers generate a large access resistance that suppresses the device mobility from the intrinsic value of about 20 cm2 V-1 s-1 . Our findings clarify the reason why device characteristics are distributed in single-crystal OTFTs.

Dark current of organic heterostructure devices with insulating spacer layers

NASA Astrophysics Data System (ADS)

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

2015-03-01

The dark current density at fixed voltage bias in donor/acceptor organic planar heterostructure devices can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of an interfacial exciplex state. If the exciplex formation rate limits current flow, the insulating interface layer can increase dark current whereas, if the exciplex recombination rate limits current flow, the insulating interface layer decreases dark current. We present a device model to describe this behavior and illustrate it experimentally for various donor/acceptor systems, e.g. P3HT/LiF/C60.

Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

DOE PAGES

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; ...

2015-05-14

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and wemore » discuss relevant experimental data.« less

Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

PubMed

Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

2015-04-22

Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

Full space device optimization for solar cells.

PubMed

Baloch, Ahmer A B; Aly, Shahzada P; Hossain, Mohammad I; El-Mellouhi, Fedwa; Tabet, Nouar; Alharbi, Fahhad H

2017-09-20

Advances in computational materials have paved a way to design efficient solar cells by identifying the optimal properties of the device layers. Conventionally, the device optimization has been governed by single or double descriptors for an individual layer; mostly the absorbing layer. However, the performance of the device depends collectively on all the properties of the material and the geometry of each layer in the cell. To address this issue of multi-property optimization and to avoid the paradigm of reoccurring materials in the solar cell field, a full space material-independent optimization approach is developed and presented in this paper. The method is employed to obtain an optimized material data set for maximum efficiency and for targeted functionality for each layer. To ensure the robustness of the method, two cases are studied; namely perovskite solar cells device optimization and cadmium-free CIGS solar cell. The implementation determines the desirable optoelectronic properties of transport mediums and contacts that can maximize the efficiency for both cases. The resulted data sets of material properties can be matched with those in materials databases or by further microscopic material design. Moreover, the presented multi-property optimization framework can be extended to design any solid-state device.

Chemical-mechanical polishing of recessed microelectromechanical devices

DOEpatents

Barron, Carole C.; Hetherington, Dale L.; Montague, Stephen

1999-01-01

A method is disclosed for micromachining recessed layers (e.g. sacrificial layers) of a microelectromechanical system (MEMS) device formed in a cavity etched into a semiconductor substrate. The method uses chemical-mechanical polishing (CMP) with a resilient polishing pad to locally planarize one or more of the recessed layers within the substrate cavity. Such local planarization using the method of the present invention is advantageous for improving the patterning of subsequently deposited layers, for eliminating mechanical interferences between functional elements (e.g. linkages) of the MEMS device, and for eliminating the formation of stringers. After the local planarization of one or more of the recessed layers, another CMP step can be provided for globally planarizing the semiconductor substrate to form a recessed MEMS device which can be integrated with electronic circuitry (e.g. CMOS, BiCMOS or bipolar circuitry) formed on the surface of the substrate.

Micro-fabricated integrated coil and magnetic circuit and method of manufacturing thereof

DOEpatents

Mihailovich, Robert E.; Papavasiliou, Alex P.; Mehrotra, Vivek; Stupar, Philip A.; Borwick, III, Robert L.; Ganguli, Rahul; DeNatale, Jeffrey F.

2017-03-28

A micro-fabricated electromagnetic device is provided for on-circuit integration. The electromagnetic device includes a core. The core has a plurality of electrically insulating layers positioned alternatingly between a plurality of magnetic layers to collectively form a continuous laminate having alternating magnetic and electrically insulating layers. The electromagnetic device includes a coil embedded in openings of the semiconductor substrate. An insulating material is positioned in the cavity and between the coil and an inner surface of the core. A method of manufacturing the electromagnetic device includes providing a semiconductor substrate having openings formed therein. Windings of a coil are electroplated and embedded in the openings. The insulating material is coated on or around an exposed surface of the coil. Alternating magnetic layers and electrically insulating layers may be micro-fabricated and electroplated as a single and substantially continuous segment on or around the insulating material.

Chemical-mechanical polishing of recessed microelectromechanical devices

DOEpatents

Barron, C.C.; Hetherington, D.L.; Montague, S.

1999-07-06

A method is disclosed for micromachining recessed layers (e.g. sacrificial layers) of a microelectromechanical system (MEMS) device formed in a cavity etched into a semiconductor substrate. The method uses chemical-mechanical polishing (CMP) with a resilient polishing pad to locally planarize one or more of the recessed layers within the substrate cavity. Such local planarization using the method of the present invention is advantageous for improving the patterning of subsequently deposited layers, for eliminating mechanical interferences between functional elements (e.g. linkages) of the MEMS device, and for eliminating the formation of stringers. After the local planarization of one or more of the recessed layers, another CMP step can be provided for globally planarizing the semiconductor substrate to form a recessed MEMS device which can be integrated with electronic circuitry (e.g., CMOS, BiCMOS or bipolar circuitry) formed on the surface of the substrate. 23 figs.

Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haight, Richard A.; Hannon, James B.; Oida, Satoshi

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Method of examining microcircuit patterns

NASA Technical Reports Server (NTRS)

Suszko, S. F. (Inventor)

1986-01-01

Examination of microstructures of LSI and VLSI devices is facilitated by employing a method in which the device is photographed through a darkfield illumination optical microscope and the resulting negative subjected to inverse processing to form a positive on a photographic film. The film is then developed to form photographic prints or transparencies which clearly illustrate the structure of the device. The entire structure of a device may be examined by alternately photographing the device and selectively etching layers of the device in order to expose underlying layers.

Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

PubMed

Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

2015-09-15

Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

Performance of Bulk Heterojunction Photovoltaic Devices Prepared by Airbrush Spray Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, R.; Morfa, A.; Ferguson, A. J.

2008-01-01

We have used airbrush spray deposition to fabricate organic photovoltaic devices with an active layer composed of a blend of poly(3-hexylthiophene) and [6,6]-phenyl-C{sub 61} butyric acid methyl ester. Working devices were prepared in ambient conditions from a variety of common organic solvents; active layers prepared from chlorobenzene exhibit improved homogeneity, resulting in narrower distributions of the relevant device parameters. Further studies on devices prepared from chlorobenzene showed that annealing at 120 C for 10 min resulted in optimum performance, and that an active layer thickness of 150 nm resulted in a maximum efficiency of 2.35% under AM1.5 illumination at 1more » sun.« less

Mechanically flexible organic electroluminescent device with directional light emission

DOEpatents

Duggal, Anil Raj; Shiang, Joseph John; Schaepkens, Marc

2005-05-10

A mechanically flexible and environmentally stable organic electroluminescent ("EL") device with directional light emission comprises an organic EL member disposed on a flexible substrate, a surface of which is coated with a multilayer barrier coating which includes at least one sublayer of a substantially transparent organic polymer and at least one sublayer of a substantially transparent inorganic material. The device includes a reflective metal layer disposed on the organic EL member opposite to the substrate. The reflective metal layer provides an increased external quantum efficiency of the device. The reflective metal layer and the multilayer barrier coating form a seal around the organic EL member to reduce the degradation of the device due to environmental elements.

Molecular engineering to improve carrier lifetimes for organic photovoltaic devices with thick active layers

DOE PAGES

Oosterhout, Stefan D.; Braunecker, Wade A.; Owczarczyk, Zbyslaw R.; ...

2017-04-27

The morphology of the bulk heterojunction absorber layer in an organic photovoltaic (OPV) device has a profound effect on the electrical properties and efficiency of the device. Previous work has consistently demonstrated that the solubilizing side-chains of the donor material affect these properties and device performance in a non-trivial way. Here, using Time-Resolved Microwave Conductivity (TRMC), we show by direct measurements of carrier lifetimes that the choice of side chains can also make a substantial difference in photocarrier dynamics. We have previously demonstrated a correlation between peak photoconductance measured by TRMC and device efficiencies; here, we demonstrate that TRMC photocarriermore » dynamics have an important bearing on device performance in a case study of devices made from donor materials with linear vs. branched side-chains and with variable active layer thicknesses. We use Grazing-Incidence Wide Angle X-ray Scattering to elucidate the cause of the different carrier lifetimes as a function of different aggregation behavior in the polymers. Consequently, the results help establish TRMC as a technique for screening OPV donor materials whose devices maintain performance in thick active layers (>250 nm) designed to improve light harvesting, film reproducibility, and ease of processing.« less

CVD Polymers for Devices and Device Fabrication.

PubMed

Wang, Minghui; Wang, Xiaoxue; Moni, Priya; Liu, Andong; Kim, Do Han; Jo, Won Jun; Sojoudi, Hossein; Gleason, Karen K

2017-03-01

Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

DOEpatents

Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

2011-02-22

An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Perforation patterned electrical interconnects

DOEpatents

Frey, Jonathan

2014-01-28

This disclosure describes systems and methods for increasing the usable surface area of electrical contacts within a device, such as a thin film solid state device, through the implementation of electrically conductive interconnects. Embodiments described herein include the use of a plurality of electrically conductive interconnects that penetrate through a top contact layer, through one or more multiple layers, and into a bottom contact layer. The plurality of conductive interconnects may form horizontal and vertical cross-sectional patterns. The use of lasers to form the plurality of electrically conductive interconnects from reflowed layer material further aids in the manufacturing process of a device.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Influence of C60 co-deposition on the growth kinetics of diindenoperylene-From rapid roughening to layer-by-layer growth in blended organic films

NASA Astrophysics Data System (ADS)

Lorch, C.; Novák, J.; Banerjee, R.; Weimer, S.; Dieterle, J.; Frank, C.; Hinderhofer, A.; Gerlach, A.; Carla, F.; Schreiber, F.

2017-02-01

We investigated the growth of the two phase-separating materials diindenoperylene (DIP) and buckminsterfullerene C60 with different mixing ratio in real-time and in situ by X-ray scattering experiments. We found that at room temperature, mixtures with an excess of DIP show a growth mode which is very close to the perfect layer-by-layer limit with DIP crystallites forming over the entire film thickness. An unexpected increase in the island size is observed for these mixtures as a function of film thickness. On the other hand, equimolar and C60 dominated mixtures grow with poor crystallinity but form very smooth films. Additionally, it is observed that higher substrate temperatures lead to an increase in the length scale of phase separation with film thickness.

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

NASA Technical Reports Server (NTRS)

Theofylaktos, Onoufrios (Inventor); Meador, Michael A. (Inventor); Miranda, Felix A. (Inventor); Pinto, Nicholas (Inventor); Mueller, Carl H. (Inventor); Santos-Perez, Javier (Inventor)

2017-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Laminated microchannel devices, mixing units and method of making same

DOEpatents

Bennett, Wendy D [Kennewick, WA; Hammerstrom, Donald J [West Richland, WA; Martin, Peter M [Kennewick, WA; Matson, Dean W [Kennewick, WA

2002-10-17

A laminated microchannel device is described in which there is a unit operation process layer that has longitudinal channel. The longitudinal channel is cut completely through the layer in which the unit process operation resides. Both the device structure and method of making the device provide significant advantages in terms of simplicity and efficiency. A static mixing unit that can be incorporated in the laminated microchannel device is also described.

Electrode with transparent series resistance for uniform switching of optical modulation devices

DOEpatents

Tench, D Morgan [Camarillo, CA; Cunningham, Michael A [Thousand Oaks, CA; Kobrin, Paul H [Newbury Park, CA

2008-01-08

Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

Charged particle layers in the Debye limit.

PubMed

Golden, Kenneth I; Kalman, Gabor J; Kyrkos, Stamatios

2002-09-01

We develop an equivalent of the Debye-Hückel weakly coupled equilibrium theory for layered classical charged particle systems composed of one single charged species. We consider the two most important configurations, the charged particle bilayer and the infinite superlattice. The approach is based on the link provided by the classical fluctuation-dissipation theorem between the random-phase approximation response functions and the Debye equilibrium pair correlation function. Layer-layer pair correlation functions, screened and polarization potentials, static structure functions, and static response functions are calculated. The importance of the perfect screening and compressibility sum rules in determining the overall behavior of the system, especially in the r--> infinity limit, is emphasized. The similarities and differences between the quasi-two-dimensional bilayer and the quasi-three-dimensional superlattice are highlighted. An unexpected behavior that emerges from the analysis is that the screened potential, the correlations, and the screening charges carried by the individual layers exhibit a marked nonmonotonic dependence on the layer separation.

Two-layer convective heating prediction procedures and sensitivities for blunt body reentry vehicles

NASA Technical Reports Server (NTRS)

Bouslog, Stanley A.; An, Michael Y.; Wang, K. C.; Tam, Luen T.; Caram, Jose M.

1993-01-01

This paper provides a description of procedures typically used to predict convective heating rates to hypersonic reentry vehicles using the two-layer method. These procedures were used to compute the pitch-plane heating distributions to the Apollo geometry for a wind tunnel test case and for three flight cases. Both simple engineering methods and coupled inviscid/boundary layer solutions were used to predict the heating rates. The sensitivity of the heating results in the choice of metrics, pressure distributions, boundary layer edge conditions, and wall catalycity used in the heating analysis were evaluated. Streamline metrics, pressure distributions, and boundary layer edge properties were defined from perfect gas (wind tunnel case) and chemical equilibrium and nonequilibrium (flight cases) inviscid flow-field solutions. The results of this study indicated that the use of CFD-derived metrics and pressures provided better predictions of heating when compared to wind tunnel test data. The study also showed that modeling entropy layer swallowing and ionization had little effect on the heating predictions.

Multifunctions - liquid crystal displays

NASA Astrophysics Data System (ADS)

Bechteler, M.

1980-12-01

Large area liquid crystal displays up to 400 cm square were developed capable of displaying a large quantity of analog and digital information, such as required for car dashboards, communication systems, and data processing, while fulfilling the attendant requirements on view tilt angle and operating temperature range. Items incorporated were: low resistance conductive layers deposited by means of a sputtermachine, preshaped glasses and broken glassfibers, assuring perfect parallellism between glass plates, rubbed plastic layers for excellent electrooptical properties, and fluorescent plates for display illumination in bright sunlight as well as in dim light conditions. Prototypes are described for clock and automotive applications.

Nearly Perfect Triplet-Triplet Energy Transfer from Wannier Excitons to Naphthalene in Organic-Inorganic Hybrid Quantum-Well Materials

NASA Astrophysics Data System (ADS)

Ema, K.; Inomata, M.; Kato, Y.; Kunugita, H.; Era, M.

2008-06-01

We report the observation of extremely efficient energy transfer (greater than 99%) in an organic-inorganic hybrid quantum-well structure consisting of perovskite-type lead bromide well layers and naphthalene-linked ammonium barrier layers. Time-resolved photoluminescence measurements confirm that the transfer is triplet-triplet Dexter-type energy transfer from Wannier excitons in the inorganic well to the triplet state of naphthalene molecules in the organic barrier. Using measurements in the 10 300 K temperature range, we also investigated the temperature dependence of the energy transfer.

Parallel inhomogeneity and the Alfven resonance. 1: Open field lines

NASA Technical Reports Server (NTRS)

Hansen, P. J.; Harrold, B. G.

1994-01-01

In light of a recent demonstration of the general nonexistence of a singularity at the Alfven resonance in cold, ideal, linearized magnetohydrodynamics, we examine the effect of a small density gradient parallel to uniform, open ambient magnetic field lines. To lowest order, energy deposition is quantitatively unaffected but occurs continuously over a thickened layer. This effect is illustrated in a numerical analysis of a plasma sheet boundary layer model with perfectly absorbing boundary conditions. Consequences of the results are discussed, both for the open field line approximation and for the ensuing closed field line analysis.

Application of an Engineering Inviscid-Boundary Layer Method to Slender Three-Dimensional Vehicle Forebodies

NASA Technical Reports Server (NTRS)

Riley, Christopher J.

1993-01-01

An engineering inviscid-boundary layer method has been modified for application to slender three-dimensional (3-D) forebodies which are characteristic of transatmospheric vehicles. An improved shock description in the nose region has been added to the inviscid technique which allows the calculation of a wider range of body geometries. The modified engineering method is applied to the perfect gas solution over a slender 3-D configuration at angle of attack. The method predicts surface pressures and laminar heating rates on the windward side of the vehicle that compare favorably with numerical solutions of the thin-layer Navier-Stokes equations. These improvements extend the 3-D capabilities of the engineering method and significantly increase its design applications.

Simultaneous RGB lasing from a single-chip polymer device.

PubMed

Yamashita, Kenichi; Takeuchi, Nobutaka; Oe, Kunishige; Yanagi, Hisao

2010-07-15

This Letter describes the fabrication and operation of a single-chip white-laser device. The laser device has a multilayered structure consisting of three laser layers. Each laser layer comprises polymer claddings and a waveguide core doped with organic dye. In each laser layer, grating corrugations were fabricated by UV-nanoimprint lithography that act as distributed-feedback cavity structures. Under optical pumping, lasing output with red, green, and blue colors was simultaneously obtained from the sample edge.

Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

DOEpatents

Moustakas, Theodore D.; Maruska, H. Paul

1985-07-09

A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Structural Statics Analysis and Optimization Design of Regulating Device for Air Conveyer Outlet in Coal Mine

NASA Astrophysics Data System (ADS)

Gong, Xiaoyan; Li, Ying; Zhang, Yongqiang

2018-06-01

In view of the enlargement of fully mechanized face excavation and long distance driving, gas emission and dust production increase greatly. However, the current ventilation device direction angle, caliber and front-back distance cannot change dynamically at any time, resulting in the serious accumulation in the dead zone. In this paper, a new device were proposed that can solve above problems. Finite element ANSYS software were used to simulate and optimize the structural safety of the control device' key components. The optimization results showed that the equivalent stress decreases by 49%; after the optimization of deformation and mass are 0.829mm and 0.548kg, which were 21% and 10% lower than before.The quality, safety, reliability and cost of the control device reach the expected standards perfectly, which can meet the requirements of safe ventilation and down-dusting of fully mechanized face.

Fabrication and RF characterization of a single nickel silicide nanowire for an interconnect.

PubMed

Lee, Dongjin; Kang, Myunggil; Hong, Suheon; Hwang, Donghoon; Heo, Keun; Joo, Won-Jae; Kim, Sangsig; Whang, Dongmok; Hwang, Sung Woo

2013-09-01

We fabricated a nickel silicide nanowire (NiSi NW) device with a low thermal budget and characterized it by measuring the S-parameters in the radio-frequency (RF) regime. A single silicon nanowire (Si NW) was assembled on a substrate with a two-port coplanar waveguide structure using the dielectrophoresis method. Then, the Si NW on the device was perfectly transformed into a NiSi NW. The NiSi NW device was characterized by performing measurements in the DC and RF regimes. The transformation into the NiSi NW resulted in reducing about three-order more the resistance than before the transformation. Hence, the transmission of the NiSi NW device was 25 dB higher than that of the Si NW device up to gigahertz. We also discussed extracting the intrinsic properties of the NiSi NW by using de-embedding, circuit modeling, and simulation.

Passive electrically switchable circuit element having improved tunability and method for its manufacture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mickel, Patrick R; James, Conrad D

2014-09-16

A resistive switching device and methods for making the same are disclosed. In the above said device, a resistive switching layer is interposed between opposing electrodes. The resistive switching layer comprises at least two sub-layers of switchable insulative material characterized by different ionic mobilities.

Photovoltaic cells with a graded active region achieved using stamp transfer printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen R.; Lee, Jun Yeob; Cho, Yong Joo

Disclosed herein are processes for fabricating organic photosensitive optoelectronic devices with a vertical compositionally graded organic active layer. The processes use either a single-stamp or double-stamp printing technique to transfer the vertical compositionally graded organic active layer from a starting substrate to a device layer.

Vertical III-nitride thin-film power diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

2017-03-14

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Integrated circuit with dissipative layer for photogenerated carriers

DOEpatents

Myers, D.R.

1988-04-20

The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.

Colliding Magnetic Flux Ropes and Quasi-Separatrix Layers in a Laboratory Plasma

NASA Astrophysics Data System (ADS)

Lawrence, Eric Eugene

An experimental study of the dynamics of colliding magnetic flux ropes and the magnetic reconnection that occurs during these collisions is presented. A magnetic flux rope is a bundle of twisted magnetic field lines that is ubiquitous in space and solar plasmas. The flux ropes are created in the Large Plasma Device (LAPD) using two heated lanthanum hexaboride (LaB6) cathodes that inject currents into the background plasma. The currents are initially parallel to the background magnetic field. The azimuthal field of each current together with the background axial field create helical twisted flux ropes. It is found that the flux ropes rotate in time (corkscrew) and collide with each other. During a collision, antiparallel magnetic fields can undergo magnetic reconnection. When these collisions occur, we observe current layers flowing in the opposite direction of the injected current, a signatuare of reconnection. Analysis of the three-dimensional magnetic field lines shows the existence of quasi-separatrix layers (QSLs). These are regions in the magnetic configuration where there are large spatial gradients in the connectivity of field line footpoints in the boundary surfaces. QSLs are thought to be favorable sites for magnetic reconnection. It is shown that the location and shape of the QSL is similar to what is seen in simulations of merging flux ropes. Furthermore, the field line structure of the QSL is similar to that of a twisted hyperbolic flux tube (HFT). An HFT is a type of QSL that has been shown to be a preferred site for current sheet formation in simulations of interacting coronal loops. The HFT in this experiment is found to be generally near the reverse current layers, although the agreement is not perfect. Looking at the time evolution of the QSL, we find that the QSL cross-sectional area grows and contracts at the same time that the flux ropes collide and that the reverse current layers appear. Analysis of the field line motion shows that, during reconnection, bundles of field lines rapidly flip across the QSLs. This is analagous to the way that field lines are pushed across a separatrix in 2D reconnection.

Formation of nanofilament field emission devices

DOEpatents

Morse, Jeffrey D.; Contolini, Robert J.; Musket, Ronald G.; Bernhardt, Anthony F.

2000-01-01

A process for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50-200 nm, with an aspect ratio of 5-10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.

Photoelectrochemical cells for conversion of solar energy to electricity and methods of their manufacture

DOEpatents

Skotheim, Terje

1984-04-10

A photoelectric device is disclosed which comprises first and second layers of semiconductive material, each of a different bandgap, with a layer of dry solid polymer electrolyte disposed between the two semiconductor layers. A layer of a polymer blend of a highly conductive polymer and a solid polymer electrolyte is further interposed between the dry solid polymer electrolyte and the first semiconductor layer. A method of manufacturing such devices is also disclosed.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

The Perfectly Matched Layer absorbing boundary for fluid-structure interactions using the Immersed Finite Element Method.

PubMed

Yang, Jubiao; Yu, Feimi; Krane, Michael; Zhang, Lucy T

2018-01-01

In this work, a non-reflective boundary condition, the Perfectly Matched Layer (PML) technique, is adapted and implemented in a fluid-structure interaction numerical framework to demonstrate that proper boundary conditions are not only necessary to capture correct wave propagations in a flow field, but also its interacted solid behavior and responses. While most research on the topics of the non-reflective boundary conditions are focused on fluids, little effort has been done in a fluid-structure interaction setting. In this study, the effectiveness of the PML is closely examined in both pure fluid and fluid-structure interaction settings upon incorporating the PML algorithm in a fully-coupled fluid-structure interaction framework, the Immersed Finite Element Method. The performance of the PML boundary condition is evaluated and compared to reference solutions with a variety of benchmark test cases including known and expected solutions of aeroacoustic wave propagation as well as vortex shedding and advection. The application of the PML in numerical simulations of fluid-structure interaction is then investigated to demonstrate the efficacy and necessity of such boundary treatment in order to capture the correct solid deformation and flow field without the requirement of a significantly large computational domain.

Cross-layer Design for MIMO Systems with Transmit Antenna Selection and Imperfect CSI

NASA Astrophysics Data System (ADS)

Yu, Xiangbin; Liu, Yan; Rui, Yun; Zhou, Tingting; Yin, Xin

2013-04-01

In this paper, by combining adaptive modulation and automatic repeat request (ARQ), a cross-layer design (CLD) scheme for multiple-input and multiple-output (MIMO) system with transmit antenna selection (TAS) and imperfect channel state information (CSI) is presented. Based on the imperfect CSI, the probability density function of the effective signal to noise ratio (SNR) is derived, and the fading gain switching thresholds are also derived subject to a target packet loss rate and fixed power constraint. According to these results, we further derive the average spectrum efficiency (SE) and packet error rate (PER) of the system. As a result, closed-form expressions of the average SE and PER are obtained, respectively. The derived expressions include the expressions under perfect CSI as special cases, and can provide good performance evaluation for the CLD system with imperfect CSI. Simulation results verify the validity of the theoretical analysis. The results show that the CLD system with TAS provides better SE than that with space-time block coding, but the SE and PER performance of the system with imperfect CSI are worse than those with perfect CSI due to the estimation error.

Understanding the Flow Physics of Shock Boundary-Layer Interactions Using CFD and Numerical Analyses

NASA Technical Reports Server (NTRS)

Friedlander, David J.

2013-01-01

Computational fluid dynamic (CFD) analyses of the University of Michigan (UM) Shock/Boundary-Layer Interaction (SBLI) experiments were performed as an extension of the CFD SBLI Workshop held at the 48th AIAA Aerospace Sciences Meeting in 2010. In particular, the UM Mach 2.75 Glass Tunnel with a semi-spanning 7.75deg wedge was analyzed in attempts to explore key physics pertinent to SBLI's, including thermodynamic and viscous boundary conditions as well as turbulence modeling. Most of the analyses were 3D CFD simulations using the OVERFLOW flow solver, with additional quasi-1D simulations performed with an in house MATLAB code interfacing with the NIST REFPROP code to explore perfect verses non-ideal air. A fundamental exploration pertaining to the effects of particle image velocimetry (PIV) on post-processing data is also shown. Results from the CFD simulations showed an improvement in agreement with experimental data with key contributions including adding a laminar zone upstream of the wedge and the necessity of mimicking PIV particle lag for comparisons. Results from the quasi-1D simulation showed that there was little difference between perfect and non-ideal air for the configuration presented.

Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

NASA Astrophysics Data System (ADS)

Zhang, Yu; Tang, Fu-Ling; Xue, Hong-Tao; Lu, Wen-Jiang; Liu, Jiang-Fei; Huang, Min

2015-02-01

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe2 (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about -1.2 J/m2, indicating that this interface is very stable. The MoSe2 layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about -6.5 to -5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about -5.0 to -1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe2 layer.

Crosswell electromagnetic modeling from impulsive source: Optimization strategy for dispersion suppression in convolutional perfectly matched layer

PubMed Central

Fang, Sinan; Pan, Heping; Du, Ting; Konaté, Ahmed Amara; Deng, Chengxiang; Qin, Zhen; Guo, Bo; Peng, Ling; Ma, Huolin; Li, Gang; Zhou, Feng

2016-01-01

This study applied the finite-difference time-domain (FDTD) method to forward modeling of the low-frequency crosswell electromagnetic (EM) method. Specifically, we implemented impulse sources and convolutional perfectly matched layer (CPML). In the process to strengthen CPML, we observed that some dispersion was induced by the real stretch κ, together with an angular variation of the phase velocity of the transverse electric plane wave; the conclusion was that this dispersion was positively related to the real stretch and was little affected by grid interval. To suppress the dispersion in the CPML, we first derived the analytical solution for the radiation field of the magneto-dipole impulse source in the time domain. Then, a numerical simulation of CPML absorption with high-frequency pulses qualitatively amplified the dispersion laws through wave field snapshots. A numerical simulation using low-frequency pulses suggested an optimal parameter strategy for CPML from the established criteria. Based on its physical nature, the CPML method of simply warping space-time was predicted to be a promising approach to achieve ideal absorption, although it was still difficult to entirely remove the dispersion. PMID:27585538

Influences of device structures on microstructure-correlated photovoltaic characteristics of organic solar cells

NASA Astrophysics Data System (ADS)

Wu, Fu-Chiao; Yang, Cheng-Chi; Tseng, Po-Tsung; Chou, Wei-Yang; Cheng, Horng-Long

2017-02-01

Photovoltaic characteristics of organic solar cells (OSCs) are correlated with microstructural qualities of active layers (ALs). Numerous efforts focused on improving process conditions of ALs to attain effective microstructures to achieve high-efficiency OSCs. Aside from AL process conditions, layer properties under AL can also influence microstructural qualities of AL. In this study, we adopted poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61-butyric acid methyl ester (PCBM) mixture as AL, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as hole extraction layer, and branched polyethyleneimine (BPEI) as electron extraction layer to prepare OSCs with different device structures, that is, normal type (PEDOT:PSS/P3HT:PCBM/BPEI) and inverted type (BPEI/P3HT:PCBM/PEDOT:PSS) structures. We discovered that although devices have similar layer components, they have different photovoltaic characteristics. Inverted devices demonstrated higher power conversion efficiency than normal devices. Various methods, including absorption spectroscopy and microscopy, were used to study AL microstructures of different devices. We observed that P3HT crystallites grown on BPEI had longer vertical size and shorter horizontal size compared with those grown on PEDOT:PSS; these properties could result from larger interfacial tension of P3HT with BPEI than with PEDOT:PSS. Observed shape of P3HT crystallites in inverted devices facilitated efficient charge transport to electrodes and suppressed current leakage. As a result, inverted devices generated improved photovoltaic performance.

Novel Layered Supercell Structure from Bi 2AlMnO 6 for Multifunctionalities

DOE PAGES

Li, Leigang; Boullay, Philippe; Lu, Ping; ...

2017-10-02

Layered materials, e.g., graphene and transition metal (di)chalcogenides, holding great promises in nanoscale device applications have been extensively studied in fundamental chemistry, solid state physics and materials research areas. In parallel, layered oxides (e.g., Aurivillius and Ruddlesden–Popper phases) present an attractive class of materials both because of their rich physics behind and potential device applications. In this work, we report a novel layered oxide material with self-assembled layered supercell structure consisting of two mismatch-layered sublattices of [Bi 3O 3+δ] and [MO 2] 1.84 (M = Al/Mn, simply named BAMO), i.e., alternative layered stacking of two mutually incommensurate sublattices made ofmore » a three-layer-thick Bi–O slab and a one-layer-thick Al/Mn–O octahedra slab in the out-of-plane direction. Strong room-temperature ferromagnetic and piezoelectric responses as well as anisotropic optical property have been demonstrated with great potentials in various device applications. Furthermore, the realization of the novel BAMO layered supercell structure in this work has paved an avenue toward exploring and designing new materials with multifunctionalities.« less

Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

NASA Astrophysics Data System (ADS)

Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

2015-05-01

We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Lithium-ion batteries having conformal solid electrolyte layers

DOEpatents

Kim, Gi-Heon; Jung, Yoon Seok

2014-05-27

Hybrid solid-liquid electrolyte lithium-ion battery devices are disclosed. Certain devices comprise anodes and cathodes conformally coated with an electron insulating and lithium ion conductive solid electrolyte layer.

Controlled growth of larger heterojunction interface area for organic photosensitive devices

DOEpatents

Yang, Fan [Somerset, NJ; Forrest, Stephen R [Ann Arbor, MI

2009-12-29

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

Optical Coherence Tomography (OCT) Device Independent Intraretinal Layer Segmentation

PubMed Central

Ehnes, Alexander; Wenner, Yaroslava; Friedburg, Christoph; Preising, Markus N.; Bowl, Wadim; Sekundo, Walter; zu Bexten, Erdmuthe Meyer; Stieger, Knut; Lorenz, Birgit

2014-01-01

Purpose To develop and test an algorithm to segment intraretinal layers irrespectively of the actual Optical Coherence Tomography (OCT) device used. Methods The developed algorithm is based on the graph theory optimization. The algorithm's performance was evaluated against that of three expert graders for unsigned boundary position difference and thickness measurement of a retinal layer group in 50 and 41 B-scans, respectively. Reproducibility of the algorithm was tested in 30 C-scans of 10 healthy subjects each with the Spectralis and the Stratus OCT. Comparability between different devices was evaluated in 84 C-scans (volume or radial scans) obtained from 21 healthy subjects, two scans per subject with the Spectralis OCT, and one scan per subject each with the Stratus OCT and the RTVue-100 OCT. Each C-scan was segmented and the mean thickness for each retinal layer in sections of the early treatment of diabetic retinopathy study (ETDRS) grid was measured. Results The algorithm was able to segment up to 11 intraretinal layers. Measurements with the algorithm were within the 95% confidence interval of a single grader and the difference was smaller than the interindividual difference between the expert graders themselves. The cross-device examination of ETDRS-grid related layer thicknesses highly agreed between the three OCT devices. The algorithm correctly segmented a C-scan of a patient with X-linked retinitis pigmentosa. Conclusions The segmentation software provides device-independent, reliable, and reproducible analysis of intraretinal layers, similar to what is obtained from expert graders. Translational Relevance Potential application of the software includes routine clinical practice and multicenter clinical trials. PMID:24820053