High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

16 CFR 1505.6 - Performance.

Code of Federal Regulations, 2010 CFR

2010-01-01

... horizontal. No spillage of molten material or hot liquids from containers shall occur while the toy is... breakdown for 1 minute a sinusoidal test potential applied between the high-voltage and low-voltage windings... volts plus twice the rated voltage of the high-voltage winding. The test potential shall be supplied...

Oxidatively stable fluorinated sulfone electrolytes for high voltage high energy lithium-ion batteries

DOE PAGES

Su, Chi -Cheung; He, Meinan; Redfern, Paul C.; ...

2017-03-16

New fluorinated sulfones were synthesized and evaluated in high voltage lithium-ion batteries using LiNi 0.5Mn 1.5O 4 (LNMO) cathode. Fluorinated sulfones with an α-trifluoromethyl group exhibit enhanced oxidation stability, reduced viscosity and superior separator wettability as compared to their non-fluorinated counterparts. Finally, the improved performance in high voltage cells makes it a promising high voltage electrolyte for 5-V lithium-ion chemistry.

Improved performance of the microbial electrolysis desalination and chemical-production cell with enlarged anode and high applied voltages.

PubMed

Ye, Bo; Luo, Haiping; Lu, Yaobin; Liu, Guangli; Zhang, Renduo; Li, Xiao

2017-11-01

The aim of this study was to improve performance of the microbial electrolysis desalination and chemical-production cell (MEDCC) using enlarged anode and high applied voltages. MEDCCs with anode lengths of 9 and 48cm (i.e., the 9cm-anode MEDCC and 48cm-anode MEDCC, respectively) were tested under different voltages (1.2-3.0V). Our results demonstrated for the first time that the MEDCC could maintain high performance even under the applied voltage higher than that for water dissociation (i.e., 1.8V). Under the applied voltage of 2.5V, the maximum current density in the 48cm-anode MEDCC reached 32.8±2.6A/m 2 , which is one of the highest current densities reported so far in the bioelectrochemical system (BES). The relative abundance of Geobacter was changed along the anode length. Our results show the great potential of the BES with enlarged anode and high applied voltages. Copyright © 2017 Elsevier Ltd. All rights reserved.

High Voltage Insulation Technology

NASA Astrophysics Data System (ADS)

Scherb, V.; Rogalla, K.; Gollor, M.

2008-09-01

In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

Application of active electrode compensation to perform continuous voltage-clamp recordings with sharp microelectrodes.

PubMed

Gómez-González, J F; Destexhe, A; Bal, T

2014-10-01

Electrophysiological recordings of single neurons in brain tissues are very common in neuroscience. Glass microelectrodes filled with an electrolyte are used to impale the cell membrane in order to record the membrane potential or to inject current. Their high resistance induces a high voltage drop when passing current and it is essential to correct the voltage measurements. In particular, for voltage clamping, the traditional alternatives are two-electrode voltage-clamp technique or discontinuous single electrode voltage-clamp (dSEVC). Nevertheless, it is generally difficult to impale two electrodes in a same neuron and the switching frequency is limited to low frequencies in the case of dSEVC. We present a novel fully computer-implemented alternative to perform continuous voltage-clamp recordings with a single sharp-electrode. To reach such voltage-clamp recordings, we combine an active electrode compensation algorithm (AEC) with a digital controller (AECVC). We applied two types of control-systems: a linear controller (proportional plus integrative controller) and a model-based controller (optimal control). We compared the performance of the two methods to dSEVC using a dynamic model cell and experiments in brain slices. The AECVC method provides an entirely digital method to perform continuous recording and smooth switching between voltage-clamp, current clamp or dynamic-clamp configurations without introducing artifacts.

A high resolution on-chip delay sensor with low supply-voltage sensitivity for high-performance electronic systems.

PubMed

Sheng, Duo; Lai, Hsiu-Fan; Chan, Sheng-Min; Hong, Min-Rong

2015-02-13

An all-digital on-chip delay sensor (OCDS) circuit with high delay-measurement resolution and low supply-voltage sensitivity for efficient detection and diagnosis in high-performance electronic system applications is presented. Based on the proposed delay measurement scheme, the quantization resolution of the proposed OCDS can be reduced to several picoseconds. Additionally, the proposed cascade-stage delay measurement circuit can enhance immunity to supply-voltage variations of the delay measurement resolution without extra self-biasing or calibration circuits. Simulation results show that the delay measurement resolution can be improved to 1.2 ps; the average delay resolution variation is 0.55% with supply-voltage variations of ±10%. Moreover, the proposed delay sensor can be implemented in an all-digital manner, making it very suitable for high-performance electronic system applications as well as system-level integration.

Technical Trend of Environment-friendly High Voltage Vacuum Circuit Breaker (VCB)

NASA Astrophysics Data System (ADS)

Okubo, Hitoshi

Vacuum Circuit Breakers (VCBs) have widely been used for low and medium voltage level, because of their high current interruption performance, maintenance free operations and environment-friendly characteristics. The VCB is now going to be applied to higher voltage systems for transmission and substation use. In this paper, the recent technical trend and future perspectives of high voltage VCBs are described, as well as their technical background.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE PAGES

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.; ...

2016-07-21

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

TiN coated aluminum electrodes for DC high voltage electron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

TiN coated aluminum electrodes for DC high voltage electron guns

DOE PAGES

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; ...

2015-05-01

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6AI-4V). Following gas conditioning, each TiN-coated aluminum electrode reached -225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ~22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

Obtaining high-energy responses of nonlinear piezoelectric energy harvester by voltage impulse perturbations

NASA Astrophysics Data System (ADS)

Lan, Chunbo; Tang, Lihua; Qin, Weiyang

2017-07-01

Nonlinear energy harvesters have attracted wide research attentions to achieve broadband performances in recent years. Nonlinear structures have multiple solutions in certain frequency region that contains high-energy and low-energy orbits. It is effectively the frequency region of capturing a high-energy orbit that determines the broadband performance. Thus, maintaining large-amplitude high-energy-orbit oscillations is highly desired. In this paper, a voltage impulse perturbation approach based on negative resistance is applied to trigger high-energy-orbit responses of piezoelectric nonlinear energy harvesters. First, the mechanism of the voltage impulse perturbation and the implementation of the synthetic negative resistance circuit are discussed in detail. Subsequently, numerical simulation and experiment are conducted and the results demonstrate that the high-energy-orbit oscillations can be triggered by the voltage impulse perturbation method for both monostable and bistable configurations given various scenarios. It is revealed that the perturbation levels required to trigger and maintain high-energy-orbit oscillations are different for various excitation frequencies in the region where multiple solutions exist. The higher gain in voltage output when high-energy-orbit oscillations are captured is accompanied with the demand of a higher voltage impulse perturbation level.

Partial discharge testing under direct voltage conditions

NASA Technical Reports Server (NTRS)

Bever, R. S.; Westrom, J. L.

1982-01-01

DC partial discharge (PD) (corona) testing is performed using a multichannel analyzer for pulse storing, and data is collected during increase of voltage and at quiescent voltage levels. Thus high voltage ceramic disk capacitors were evaluated by obtaining PD data interspersed during an accelerated life test. Increased PD activity was found early in samples that later failed catastrophically. By this technique, trends of insulation behavior are revealed sensitively and nondestructively in high voltage dc components.

The CARIBU EBIS control and synchronization system

NASA Astrophysics Data System (ADS)

Dickerson, Clayton; Peters, Christopher

2015-01-01

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. The control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.

The Role of Additives in Improving Performance in High Voltage Lithium-Ion Batteries with Potentiostatic Holds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tornheim, Adam; He, Meinan; Su, Chi-Cheung

In this work, various electrolyte additives designed for enhanced performance at high voltages were evaluated with elevated temperature potentiostatic holds with LiNi0.5Co0.2Mn0.3/Li4Ti5O12 full cells to determine their effect on the high voltage stability. Of the additives investigated, many showed increased oxidation current through the 60 hour potentiostatic holds test, and adversely affected both the capacity retention and interfacial impedance. Improved high voltage performance was observed with two additives, vinylene carbonate (VC) and 1,1,2,2- tetrafluoroethyl-2,2,3,3-tetrafluoropropyl ether (TTE), which was attributed to two different mechanisms of improvement. This work challenges some conclusions in the available literature that an additive molecule that decomposesmore » on the charged cathode surface and passivates the surface against electrolyte oxidation.« less

Li-Ion Electrolytes with Improved Safety and Tolerance to High-Voltage Systems

NASA Technical Reports Server (NTRS)

Smart, Marshall C.; Bugga, Ratnakumar V.; Prakash, Surya; Krause, Frederick C.

2013-01-01

Given that lithium-ion (Li-ion) technology is the most viable rechargeable energy storage device for near-term applications, effort has been devoted to improving the safety characteristics of this system. Therefore, extensive effort has been devoted to developing nonflammable electrolytes to reduce the flammability of the cells/battery. A number of promising electrolytes have been developed incorporating flame-retardant additives, and have been shown to have good performance in a number of systems. However, these electrolyte formulations did not perform well when utilizing carbonaceous anodes with the high-voltage materials. Thus, further development was required to improve the compatibility. A number of Li-ion battery electrolyte formulations containing a flame-retardant additive [i.e., triphenyl phosphate (TPP)] were developed and demonstrated in high-voltage systems. These electrolytes include: (1) formulations that incorporate varying concentrations of the flame-retardant additive (from 5 to 15%), (2) the use of mono-fluoroethylene carbonate (FEC) as a co-solvent, and (3) the use of LiBOB as an electrolyte additive intended to improve the compatibility with high-voltage systems. Thus, improved safety has been provided without loss of performance in the high-voltage, high-energy system.

Method for improving fuel cell performance

DOEpatents

Uribe, Francisco A.; Zawodzinski, Thomas

2003-10-21

A method is provided for operating a fuel cell at high voltage for sustained periods of time. The cathode is switched to an output load effective to reduce the cell voltage at a pulse width effective to reverse performance degradation from OH adsorption onto cathode catalyst surfaces. The voltage is stepped to a value of less than about 0.6 V to obtain the improved and sustained performance.

Sliding-mode control of single input multiple output DC-DC converter

NASA Astrophysics Data System (ADS)

Zhang, Libo; Sun, Yihan; Luo, Tiejian; Wan, Qiyang

2016-10-01

Various voltage levels are required in the vehicle mounted power system. A conventional solution is to utilize an independent multiple output DC-DC converter whose cost is high and control scheme is complicated. In this paper, we design a novel SIMO DC-DC converter with sliding mode controller. The proposed converter can boost the voltage of a low-voltage input power source to a controllable high-voltage DC bus and middle-voltage output terminals, which endow the converter with characteristics of simple structure, low cost, and convenient control. In addition, the sliding mode control (SMC) technique applied in our converter can enhance the performances of a certain SIMO DC-DC converter topology. The high-voltage DC bus can be regarded as the main power source to the high-voltage facility of the vehicle mounted power system, and the middle-voltage output terminals can supply power to the low-voltage equipment on an automobile. In the respect of control algorithm, it is the first time to propose the SMC-PID (Proportion Integration Differentiation) control algorithm, in which the SMC algorithm is utilized and the PID control is attended to the conventional SMC algorithm. The PID control increases the dynamic ability of the SMC algorithm by establishing the corresponding SMC surface and introducing the attached integral of voltage error, which endow the sliding-control system with excellent dynamic performance. At last, we established the MATLAB/SIMULINK simulation model, tested performance of the system, and built the hardware prototype based on Digital Signal Processor (DSP). Results show that the sliding mode control is able to track a required trajectory, which has robustness against the uncertainties and disturbances.

Sliding-mode control of single input multiple output DC-DC converter.

PubMed

Zhang, Libo; Sun, Yihan; Luo, Tiejian; Wan, Qiyang

2016-10-01

Various voltage levels are required in the vehicle mounted power system. A conventional solution is to utilize an independent multiple output DC-DC converter whose cost is high and control scheme is complicated. In this paper, we design a novel SIMO DC-DC converter with sliding mode controller. The proposed converter can boost the voltage of a low-voltage input power source to a controllable high-voltage DC bus and middle-voltage output terminals, which endow the converter with characteristics of simple structure, low cost, and convenient control. In addition, the sliding mode control (SMC) technique applied in our converter can enhance the performances of a certain SIMO DC-DC converter topology. The high-voltage DC bus can be regarded as the main power source to the high-voltage facility of the vehicle mounted power system, and the middle-voltage output terminals can supply power to the low-voltage equipment on an automobile. In the respect of control algorithm, it is the first time to propose the SMC-PID (Proportion Integration Differentiation) control algorithm, in which the SMC algorithm is utilized and the PID control is attended to the conventional SMC algorithm. The PID control increases the dynamic ability of the SMC algorithm by establishing the corresponding SMC surface and introducing the attached integral of voltage error, which endow the sliding-control system with excellent dynamic performance. At last, we established the MATLAB/SIMULINK simulation model, tested performance of the system, and built the hardware prototype based on Digital Signal Processor (DSP). Results show that the sliding mode control is able to track a required trajectory, which has robustness against the uncertainties and disturbances.

The CARIBU EBIS control and synchronization system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, Clayton, E-mail: cdickerson@anl.gov; Peters, Christopher, E-mail: cdickerson@anl.gov

2015-01-09

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. Themore » control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.« less

TiN coated aluminum electrodes for DC high voltage electron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A., E-mail: aelmusta@odu.edu; Taus, Rhys

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloymore » (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.« less

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task 2: Investigation of oil-filled paper insulated cables

NASA Astrophysics Data System (ADS)

Sosnowski, M.; Eager, G. S., Jr.

1983-06-01

Threshold voltage of oil-impregnated paper insulated cables are investigaed. Experimental work was done on model cables specially manufactured for this project. The cables were impregnated with mineral and with synthetic oils. Standard impulse breakdown voltage tests and impulse voltage breakdown tests with dc prestressing were performed at room temperature and at 1000C. The most important result is the finding of very high level of threshold voltage stress for oil-impregnated paper insulated cables. This threshold voltage is approximately 1.5 times higher than the threshold voltage or crosslinked polyethylene insulated cables.

High Voltage SPT Performance

NASA Technical Reports Server (NTRS)

Manzella, David; Jacobson, David; Jankovsky, Robert

2001-01-01

A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

30 CFR 77.704-10 - Tying into energized high-voltage surface circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS, SURFACE COAL MINES AND SURFACE WORK.... If the work of forming an additional circuit by tying into an energized high-voltage surface line is performed from the ground, any person performing such work must wear and employ all of the protective...

High Voltage TAL Performance

NASA Technical Reports Server (NTRS)

Jacobson, David T.; Jankovsky, Robert S.; Rawlin, Vincent K.; Manzella, David H.

2001-01-01

The performance of a two-stage, anode layer Hall thruster was evaluated. Experiments were conducted in single and two-stage configurations. In single-stage configuration, the thruster was operated with discharge voltages ranging from 300 to 1700 V. Discharge specific impulses ranged from 1630 to 4140 sec. Thruster investigations were conducted with input power ranging from 1 to 8.7 kW, corresponding to power throttling of nearly 9: 1. An extensive two-stage performance map was generated. Data taken with total voltage (sum of discharge and accelerating voltage) constant revealed a decrease in thruster efficiency as the discharge voltage was increased. Anode specific impulse values were comparable in the single and two-stage configurations showing no strong advantage for two-stage operation.

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

[4,4‧-bi(1,3,2-dioxathiolane)] 2,2‧-dioxide: A novel cathode additive for high-voltage performance in lithium ion batteries

NASA Astrophysics Data System (ADS)

Lee, Sang Hyun; Yoon, Sukeun; Hwang, Eui-Hyung; Kwon, Young-Gil; Lee, Young-Gi; Cho, Kuk Young

2018-02-01

High-voltage operation of lithium-ion batteries (LIBs) is a facile approach to obtaining high specific energy density, especially for LiNi0·5Mn0·3Co0·2O2 (NMC532) cathodes currently used in mid- and large-sized energy storage devices. However, high-voltage charging (>4.3 V) is accompanied by a rapid capacity fade over long cycles due to severe continuous electrolyte decomposition and instability at the cathode surface. In this study, the sulfite-based compound, [4,4‧-bi(1,3,2-dioxathiolane)] 2,2‧-dioxide (BDTD) is introduced as a novel electrolyte additive to enhance electrochemical performances of alumina-coated NMC532 cathodes cycled in the voltage range of 3.0-4.6 V. X-ray photoelectron spectroscopy (XPS) and AC impedance of cells reveal that BDTD preferentially oxidizes prior to the electrolyte solvents and forms stable film layers on to the cathode surface, preventing increased impedance caused by repeated electrolyte solvent decomposition in high-voltage operation. The cycling performance of the Li/NMC532 half-cell using an electrolyte of 1.0 M LiPF6 in ethylene carbonate/ethyl methyl carbonate (3/7, in volume) can be improved by adding a small amount of BDTD into the electrolyte. BDTD enables the usage of sulfite-type additives for cathodes in high-voltage operation.

High-Voltage Characterization for the Prototype Induction Cells

NASA Astrophysics Data System (ADS)

Huacen, Wang; Kaizhi, Zhang; Long, Wen; Qinggui, Lai; Linwen, Zhang; Jianjun, Deng

2002-12-01

Two linear induction prototype cells expected to work at 250kV, 3kA,with accelerating voltage flattop (±1%) ⩾ 70ns, have been tested to determine their high-voltage characteristics. Each cell is composed of a ferrite core immersed in oil, a gap with curved stainless steel electrodes, a solenoid magnet, and a insulator. The experiments were carried out with full-scale cells. The high voltage pulses were applied to two cells using a 100ns, 12Ω pulse Blumlein. The tests were performed at various high-voltage levels ranging from -250kV to -350kV. No breakdown was observed during the test at vacuum level (7-10) ṡ10-4 Pa. The cell schematic, the experimental set up, and the measured voltage waveforms are presented in this paper.

Macro Fiber Piezocomposite Actuator Poling Study

NASA Technical Reports Server (NTRS)

Werlink, Rudy J.; Bryant, Robert G.; Manos, Dennis

2002-01-01

The performance and advantages of Piezocomposite Actuators are to provide a low cost, in-situ actuator/sensor that is flexible, low profile and high strain per volt performance in the same plane of poled voltage. This paper extends reported data for the performance of these Macrofiber Composite (MFC) Actuators to include 4 progressively narrower Intedigitized electrode configurations with several line widths and spacing ratios. Data is reported for max free strain, average strain per applied volt, poling (alignment of the electric dipoles of the PZT ceramic) voltage vs. strain and capacitance, time to poling voltage 95% saturation. The output strain per volt progressively increases as electrode spacing decreases, with saturation occurring at lower poling voltages. The narrowest spacing ratio becomes prone to voltage breakdown or short circuits limiting the spacing width with current fabrication methods. The capacitance generally increases with increasing poling voltage level but has high sensitivity to factors such as temperature, moisture and time from poling which limit its usefulness as a simple indicator. The total time of applied poling voltage to saturate or fully line up the dipoles in the piezoceramic was generally on the order of 5-20 seconds. Less sensitivity to poling due to the applied rate of voltage increase over a 25 to 500 volt/second rate range was observed.

PV source based high voltage gain current fed converter

NASA Astrophysics Data System (ADS)

Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

2017-11-01

This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

Low Temperature Performance of High Power Density DC/DC Converter Modules

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Hammond, Ahmad; Gerber, Scott; Patterson, Richard L.; Overton, Eric

2001-01-01

In this paper, two second-generation high power density DC/DC converter modules have been evaluated at low operating temperatures. The power rating of one converter (Module 1) was specified at 150 W with an input voltage range of 36 to 75 V and output voltage of 12 V. The other converter (Module 2) was specified at 100 W with the same input voltage range and an output voltage of 3.3 V. The converter modules were evaluated in terms of their performance as a function of operating temperature in the range of 25 to -140 C. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

NASA Technical Reports Server (NTRS)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

NASA Astrophysics Data System (ADS)

Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

2017-08-01

In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

Solid-Body Fuse Developed for High- Voltage Space Power Missions

NASA Technical Reports Server (NTRS)

Dolce, James L.; Baez, Anastacio N.

2001-01-01

AEM Incorporated has completed the development, under a NASA Glenn Research Center contract, of a solid-body fuse for high-voltage power systems of satellites and spacecraft systems. High-reliability fuses presently defined by MIL-PRF-23419 do not meet the increased voltage and amperage requirements for the next generation of spacecraft. Solid-body fuses exhibit electrical and mechanical attributes that enable these fuses to perform reliably in the vacuum and high-vibration and -shock environments typically present in spacecraft applications. The construction and screening techniques for solid-body fuses described by MIL-PRF-23419/12 offer an excellent roadmap for the development of high-voltage solid-body fuses.

High-voltage nano-oxidation in deionized water and atmospheric environments by atomic force microscopy.

PubMed

Huang, Jen-Ching; Chen, Chung-Ming

2012-01-01

This study used atomic force microscopy (AFM), metallic probes with a nanoscale tip, and high-voltage generators to investigate the feasibility of high-voltage nano-oxidation processing in deionized water (DI water) and atmospheric environments. Researchers used a combination of wire-cutting and electrochemical etching to transform a 20-μm-thick stainless steel sheet into a conductive metallic AFM probe with a tip radius of 60 nm, capable of withstanding high voltages. The combination of AFM, high-voltage generators, and nanoscale metallic probes enabled nano-oxidation processing at 200 V in DI water environments, producing oxides up to 66.6 nm in height and 467.03 nm in width. Oxides produced through high-voltage nano-oxidation in atmospheric environments were 117.29 nm in height and 551.28 nm in width, considerably exceeding the dimensions of those produced in DI water. An increase in the applied bias voltage led to an apparent logarithmic increase in the height of the oxide dots in the range of 200-400 V. The performance of the proposed high-voltage nano-oxidation technique was relatively high with seamless integration between the AFM machine and the metallic probe fabricated in this study. © Wiley Periodicals, Inc.

High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

NASA Astrophysics Data System (ADS)

Na, Jong H.; Kitamura, M.; Arakawa, Y.

2007-11-01

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13V, an inverse subthreshold swing of 252mV/decade, and a field-effect mobility up to 1cm2/Vs at an operating voltage as low as 5V. The amorphous phase C60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.

High-voltage measurements on the 5 ppm relative uncertainty level with collinear laser spectroscopy

NASA Astrophysics Data System (ADS)

Krämer, J.; König, K.; Geppert, Ch; Imgram, P.; Maaß, B.; Meisner, J.; Otten, E. W.; Passon, S.; Ratajczyk, T.; Ullmann, J.; Nörtershäuser, W.

2018-04-01

We present the results of high-voltage collinear laser spectroscopy measurements on the 5 ppm relative uncertainty level using a pump and probe scheme at the 4s ^2S1/2 → 4p ^2P3/2 transition of {\\hspace{0pt}}40Ca+ involving the 3d ^2D5/2 metastable state. With two-stage laser interaction and a reference measurement we can eliminate systematic effects such as differences in the contact potentials due to different electrode materials and thermoelectric voltages, and the unknown starting potential of the ions in the ion source. Voltage measurements were performed between  -5 kV and  -19 kV and parallel measurements with stable high-voltage dividers calibrated to 5 ppm relative uncertainty were used as a reference. Our measurements are compatible with the uncertainty limits of the high-voltage dividers and demonstrate an unprecedented (factor of 20) increase in the precision of direct laser-based high-voltage measurements.

Lithium-Ion Electrolytes with Improved Safety Tolerance to High Voltage Systems

NASA Technical Reports Server (NTRS)

Smart, Marshall C. (Inventor); Prakash, Surya G. (Inventor); Bugga, Ratnakumar V. (Inventor); Krause, Frederick C. (Inventor)

2015-01-01

The invention discloses various embodiments of electrolytes for use in lithium-ion batteries, the electrolytes having improved safety and the ability to operate with high capacity anodes and high voltage cathodes. In one embodiment there is provided an electrolyte for use in a lithium-ion battery comprising an anode and a high voltage cathode. The electrolyte has a mixture of a cyclic carbonate of ethylene carbonate (EC) or mono-fluoroethylene carbonate (FEC) co-solvent, ethyl methyl carbonate (EMC), a flame retardant additive, a lithium salt, and an electrolyte additive that improves compatibility and performance of the lithium-ion battery with a high voltage cathode. The lithium-ion battery is charged to a voltage in a range of from about 2.0 V (Volts) to about 5.0 V (Volts).

Experimental investigation on On-Off current ratio behavior near onset voltage for a pentacene based organic thin film transistor

NASA Astrophysics Data System (ADS)

Amrani, Aumeur El; Es-saghiri, Abdeljabbar; Boufounas, El-Mahjoub; Lucas, Bruno

2018-06-01

The performance of a pentacene based organic thin film transistor (OTFT) with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Thus, we noticed that the onset voltage shifts toward positive voltage values with the drain voltage increase. In addition, threshold-onset differential voltage (TODV) is proposed as an original approach to estimate an averaged carrier density in pentacene. Indeed, a value of about 4.5 × 1016 cm-3 is reached at relatively high gate voltage of -50 V; this value is in good agreement with that reported in literature with other technique measurements. However, at a low applied gate voltage, the averaged pentacene carrier density remains two orders of magnitude lower; it is of about 2.8 × 1014 cm-3 and remains similar to that obtained from space charge limited current approach for low applied bias voltage of about 2.2 × 1014 cm-3. Furthermore, high IOn/IOff and IOn/IOnset current ratios of 5 × 106 and 7.5 × 107 are reported for lower drain voltage, respectively. The investigated OTFTs also showed good electrical performance including carrier mobility increasing with gate voltage; mobility values of 4.5 × 10-2 cm2 V-1 s-1 and of 4.25 × 10-2 cm2 V-1 s-1 are reached for linear and saturation regimes, respectively. These results remain enough interesting since current modulation ratio exceeds a value of 107 that is a quite important requirement than high mobility for some particular logic gate applications.

Contribution of ethylenetetrafluoroethylene (ETFE) insulation to the electrical performance of Riata® silicone leads having externalized conductors.

PubMed

Fischer, Avi; Klehn, Russell

2013-08-01

The insulation of St. Jude Medical Riata® leads contains a polytetrafluoroethylene (PTFE) liner, silicone tubing, and ethylenetetrafluoroethylene (ETFE) coating on individual cable conductors. ETFE has sufficient dielectric strength to assure electrical function. This investigation intended to analyze performance of leads with and without externalized conductors and with intact and breached ETFE. Testing was performed on ETFE-coated conductors to determine their ability to deliver high-voltage therapy. Tests were performed on samples under different conditions and current leakage was measured. A high-voltage test and a cyclic pulse test were performed, and the effect of lead modifications on the potential gradient from a high-voltage shock was used to determine functionality. Measurements from modified Riata® leads were compared with a control lead with all insulation and conducting elements intact. Current leakage for all conditions tested, was within the acceptance criteria for the high-voltage test and the cyclic pulse test. In conductors that underwent cyclic testing, the highest value of current leakage was within the limit of acceptability for both phases of the test. Testing of leads with externalized conductors and breached ETFE showed similar potential gradients compared with a control lead. Testing of ETFE-coated conductors following multiple preconditioning steps showed that ETFE serves as a redundant layer of insulation. In the event that the ETFE coating is breached, the potential gradient seen resulting from a high-voltage defibrillation shock was similar to a lead with no breach to the ETFE, even after 100 shocks.

High voltage instrument transformers for outdoor service with an insulation of low pressure SF6 gas and plastic foils

NASA Astrophysics Data System (ADS)

Brand, U.

1985-04-01

Gas-insulated failsafe high voltage instrument transformers with system voltages in the range of 123 to 420 kV for outdoor service were developed. The basic physics and high power tests performed on gas-filled instrument transformer housings are discussed. Construction and design of gas-insulated voltage transformers are explained. The insulation of the 123 kV model consists of low pressurized SF6 gas and plastic foils. The 245 kV unit has the same principal design; however, a higher SF6 pressure is used and the apparatus is fitted with a hollow composite insulator made of a fiber reinforced plastics tube and silicone casing. For the 420 kV model the same insulator type is used and a design for the voltage grading along the insulator is developed. The transformers show good performance in service; they are a safe and environment-protecting alternative to oil insulated equipment.

Encapsulating Non-Human Primate Multipotent Stromal Cells in Alginate via High Voltage for Cell-Based Therapies and Cryopreservation

PubMed Central

Gryshkov, Oleksandr; Pogozhykh, Denys; Hofmann, Nicola; Pogozhykh, Olena; Mueller, Thomas; Glasmacher, Birgit

2014-01-01

Alginate cell-based therapy requires further development focused on clinical application. To assess engraftment, risk of mutations and therapeutic benefit studies should be performed in an appropriate non-human primate model, such as the common marmoset (Callithrix jacchus). In this work we encapsulated amnion derived multipotent stromal cells (MSCs) from Callithrix jacchus in defined size alginate beads using a high voltage technique. Our results indicate that i) alginate-cell mixing procedure and cell concentration do not affect the diameter of alginate beads, ii) encapsulation of high cell numbers (up to 10×106 cells/ml) can be performed in alginate beads utilizing high voltage and iii) high voltage (15–30 kV) does not alter the viability, proliferation and differentiation capacity of MSCs post-encapsulation compared with alginate encapsulated cells produced by the traditional air-flow method. The consistent results were obtained over the period of 7 days of encapsulated MSCs culture and after cryopreservation utilizing a slow cooling procedure (1 K/min). The results of this work show that high voltage encapsulation can further be maximized to develop cell-based therapies with alginate beads in a non-human primate model towards human application. PMID:25259731

A high voltage power supply for the AE-C and D low energy electron experiment

NASA Technical Reports Server (NTRS)

Gillis, J. A.

1974-01-01

A description is given of the electrical and mechanical design and operation of high voltage power supplies for space flight use. The supply was used to generate the spiraltron high voltage for low energy electron experiment on AE-C and D. Two versions of the supply were designed and built; one design is referred to as the low power version (AE-C) and the other as the high power version (AE-D). Performance is discussed under all operating conditions.

Evaluation of niobium as candidate electrode material for DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, M.; Mohamed, Md. Abdullah; Elmustafa, A. A.; ...

2012-08-17

In this study, the field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. A total of eight electrodes were evaluated: two 304 stainless steel electrodes polished to mirror-like finish with diamond grit and six niobium electrodes (two single-crystal, two large-grain and two fine-grain) that were chemically polished using a buffered-chemical acid solution. Upon the first application of high voltage, the best large-grain and single-crystal niobium electrodes performed better than the best stainless steel electrodes, exhibiting less field emission at comparable voltage and gradient. In all cases,more » field emission from electrodes (stainless steel and/or niobium) could be significantly reduced and sometimes completely eliminated, by introducing krypton gas into the vacuum chamber while the electrode was biased at high voltage. Of all the electrodes tested, a large-grain niobium electrode performed the best, exhibiting no measurable field emission (< 10 pA) at 225 kV with 20 mm cathode/anode gap, corresponding to a gradient of 18.7 MV/m.« less

Evaluation of Niobium as Candidate Electrode Material for DC High Voltage Photoelectron Guns

NASA Technical Reports Server (NTRS)

BastaniNejad, M.; Mohamed, Abdullah; Elmustafa, A. A.; Adderley, P.; Clark, J.; Covert, S.; Hansknecht, J.; Hernandez-Garcia, C.; Poelker, M.; Mammei, R.;

Method and Apparatus for In-Situ Health Monitoring of Solar Cells in Space

NASA Technical Reports Server (NTRS)

Prokop, Norman F. (Inventor); Krasowski, Michael J. (Inventor)

2016-01-01

Embodiments of the present invention describe an apparatus including an oscillator, a ramp generator, and an inverter. The oscillator is configured to generate a waveform comprising a low time and a high time. The inverter is configured to receive the waveform generated by the oscillator, and invert the waveform. The ramp generator is configured to increase a gate control voltage of a transistor connected to a solar cell, and rapidly decrease the gate control voltage of the transistor. During the low time, a measurement of a current and a voltage of the solar cell is performed. During the high time, a measurement of a current of a shorted cell and a voltage reference is performed.

A compact 45 kV curve tracer with picoampere current measurement capability.

PubMed

Sullivan, W W; Mauch, D; Bullick, A; Hettler, C; Neuber, A; Dickens, J

2013-03-01

This paper discusses a compact high voltage curve tracer for high voltage semiconductor device characterization. The system sources up to 3 mA at up to 45 kV in dc conditions. It measures from 328 V to 60 kV with 15 V resolution and from 9.4 pA to 4 mA with 100 fA minimum resolution. Control software for the system is written in Microsoft Visual C# and features real-time measurement control and IV plotting, arc-protection and detection, an electrically isolated universal serial bus interface, and easy data exporting capabilities. The system has survived numerous catastrophic high voltage device-under-test arcing failures with no loss of measurement capability or system damage. Overall sweep times are typically under 2 min, and the curve tracer system was used to characterize the blocking performance of high voltage ceramic capacitors, high voltage silicon carbide photoconductive semiconductor switches, and high voltage coaxial cable.

Extended performance solar electric propulsion thrust system study. Volume 5. Capacitor-diode voltage multiplier: Technology evaluation

NASA Technical Reports Server (NTRS)

Martinelli, R. M.

1977-01-01

A 1-kW capacitor-diode voltage multiplier (CDVM) was designed, fabricated and tested to demonstrate the power of feasibility of high power CDVM's and to verify the analytical techniques that had been used to predict the performance characteristics of a 6-kw CDVM. High efficiency (96.2%), a low ratio of component weight to power (0.55 kg/kW), and low output ripple voltage (less than 1%, peak to peak) were obtained during the operation of a 1-kW CDVM various input line, load current, and load fault conditions.

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

A mini-photofragment translational spectrometer with ion velocity map imaging using low voltage acceleration

NASA Astrophysics Data System (ADS)

Qi, Wenke; Jiang, Pan; Lin, Dan; Chi, Xiaoping; Cheng, Min; Du, Yikui; Zhu, Qihe

2018-01-01

A mini time-sliced ion velocity map imaging photofragment translational spectrometer using low voltage acceleration has been constructed. The innovation of this apparatus adopts a relative low voltage (30-150 V) to substitute the traditional high voltage (650-4000 V) to accelerate and focus the fragment ions. The overall length of the flight path is merely 12 cm. There are many advantages for this instrument, such as compact structure, less interference, and easy to operate and control. Low voltage acceleration gives a longer turn-around time to the photofragment ions forming a thicker Newton sphere, which provides sufficient time for slicing. Ion trajectory simulation has been performed for determining the structure dimensions and the operating voltages. The photodissociation and multiphoton ionization of O2 at 224.999 nm is used to calibrate the ion images and examine the overall performance of the new spectrometer. The velocity resolution (Δν/ν) of this spectrometer from O2 photodissociation is about 0.8%, which is better than most previous results using high acceleration voltage. For the case of CF3I dissociation at 277.38 nm, many CF3 vibrational states have been resolved, and the anisotropy parameter has been measured. The application of low voltage acceleration has shown its advantages on the ion velocity map imaging (VMI) apparatus. The miniaturization of the VMI instruments can be realized on the premise of high resolution.

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

PubMed

Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

2015-08-12

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

Alterations in welding process voltage affect the generation of ultrafine particles, fume composition, and pulmonary toxicity.

PubMed

Antonini, James M; Keane, Michael; Chen, Bean T; Stone, Samuel; Roberts, Jenny R; Schwegler-Berry, Diane; Andrews, Ronnee N; Frazer, David G; Sriram, Krishnan

2011-12-01

The goal was to determine if increasing welding voltage changes the physico-chemical properties of the fume and influences lung responses. Rats inhaled 40 mg/m³ (3 h/day × 3 days) of stainless steel (SS) welding fume generated at a standard voltage setting of 25 V (regular SS) or at a higher voltage (high voltage SS) of 30 V. Particle morphology, size and composition were characterized. Bronchoalveolar lavage was performed at different times after exposures to assess lung injury. Fumes collected from either of the welding conditions appeared as chain-like agglomerates of nanometer-sized primary particles. High voltage SS welding produced a greater number of ultrafine-sized particles. Fume generated by high voltage SS welding was higher in manganese. Pulmonary toxicity was more substantial and persisted longer after exposure to the regular SS fume. In summary, a modest raise in welding voltage affected fume size and elemental composition and altered the temporal lung toxicity profile.

HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.ELECTRON BEAM TECHNOLOGY - INNOVATIVE TECHNOLOGY EVALUATION REPORT

EPA Science Inventory

This report evaluates a high-voltage electron beam (E-beam) technology's ability to destroy volatile organic compounds (VOCs) and other contaminants present in liquid wastes. Specifically, this report discusses performance and economic data from a Superfund Innovative Technology...

Revisiting the relevance of using a constant voltage step to improve electrochemical performances of Li-rich lamellar oxides

NASA Astrophysics Data System (ADS)

Pradon, A.; Caldes, M. T.; Petit, P.-E.; La Fontaine, C.; Elkaim, E.; Tessier, C.; Ouvrard, G.; Dumont, E.

2018-03-01

A Li-rich lamellar oxide was cycled at high potential and the relevance of using a constant voltage step (CVS) at the end of the charge, needed for industrial application, was investigated by electrochemical performance, X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Electrochemical studies at 4.7 and 4.5 V with and without CVS showed that capacity and voltage fading occurred mostly when cells operated at high potential. After cycling, 3D-type defects involving transition metals trapped in lithium layer were observed by HRTEM into the electrode bulk. These defects are responsible for the voltage fading. XRD microstrain parameter was used to evaluate defects rate in aged materials subjected to a CVS, showing more 3D-type defects when cycled at 4.7 V than at 4.5 V. The time spent at high potential at the end of the charge as well as the value of the upper potential limit, are both relevant parameters to voltage decay. The use of a CVS at the end of the charge needs at the same time, a reduced upper potential window in order to minimize 3D-type defects occurrence. Unfortunately, this approach is still not sufficient to prevent voltage fading.

Capacitively-coupled inductive sensors for measurements of pulsed currents and pulsed magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, C.A.

In experiments involving pulsed high magnetic fields the appearance of the full induced voltage at the output terminals of large-area inductive sensors such as diamagnetic loops and Rogowski belts imposes severe requirements on the insulation near the output. Capacitive detection of the inductive-sensor output voltage provides an ideal geometry for high-voltage insulation, and also accomplishes the necessary voltage division. An inductive-shunt current monitor was designed to utilize the capacitive-detection principle. The contruction of this device and its performance are described in this paper.

MOSFET-based high voltage short pulse generator for ultrasonic transducer excitation

NASA Astrophysics Data System (ADS)

Hidayat, Darmawan; Setianto, Syafei, Nendi Suhendi; Wibawa, Bambang Mukti

2018-02-01

This paper presents the generation of a high-voltage short pulse for the excitation of high frequency ultrasonic transducers. This is highly required in the purpose of various ultrasonic-based evaluations, particularly when high resolution measurement is necessary. A high voltage (+760 V) DC voltage source was pulsated by an ultrafast switching MOSFET which was driven by a pulse generator circuit consisting of an astable multivibrator, a one-shot multivibrator with Schmitt trigger input and a high current MOSFET driver. The generated pulses excited a 200-kHz and a 1-MHz ultrasonic transducers and tested in the transmission mode propagation to evaluate the performances of the generated pulse. The test results showed the generator were able to produce negative spike pulses up to -760 V voltage with the shortest time-width of 107.1 nanosecond. The transmission-received ultrasonic waves show frequency oscillation at 200 and 961 kHz and their amplitudes varied with the voltage of excitation pulse. These results conclude that the developed pulse generator is applicable to excite transducer for the generation of high frequency ultrasonic waves.

Series asymmetric supercapacitors based on free-standing inner-connection electrodes for high energy density and high output voltage

NASA Astrophysics Data System (ADS)

Tao, Jiayou; Liu, Nishuang; Rao, Jiangyu; Ding, Longwei; Al Bahrani, Majid Raissan; Li, Luying; Su, Jun; Gao, Yihua

2014-11-01

Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage.Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04819a

Bidirectional DC/DC Converter

NASA Astrophysics Data System (ADS)

Pedersen, F.

2008-09-01

The presented bidirectional DC/DC converter design concept is a further development of an already existing converter used for low battery voltage operation.For low battery voltage operation a high efficient low parts count DC/DC converter was developed, and used in a satellite for the battery charge and battery discharge function.The converter consists in a bidirectional, non regulating DC/DC converter connected to a discharge regulating Buck converter and a charge regulating Buck converter.The Bidirectional non regulating DC/DC converter performs with relatively high efficiency even at relatively high currents, which here means up to 35Amps.This performance was obtained through the use of power MOSFET's with on- resistances of only a few mille Ohms connected to a special transformer allowing paralleling several transistor stages on the low voltage side of the transformer. The design is patent protected. Synchronous rectification leads to high efficiency at the low battery voltages considered, which was in the range 2,7- 4,3 Volt DC.The converter performs with low switching losses as zero voltage zero current switching is implemented in all switching positions of the converter.Now, the drive power needed, to switch a relatively large number of low Ohm , hence high drive capacitance, power MOSFET's using conventional drive techniques would limit the overall conversion efficiency.Therefore a resonant drive consuming considerable less power than a conventional drive circuit was implemented in the converter.To the originally built and patent protected bidirectional non regulating DC/DC converter, is added the functionality of regulation.Hereby the need for additional converter stages in form of a Charge Buck regulator and a Discharge Buck regulator is eliminated.The bidirectional DC/DC converter can be used in connection with batteries, motors, etc, where the bidirectional feature, simple design and high performance may be useful.

The Application of Auto-Disturbance Rejection Control Optimized by Least Squares Support Vector Machines Method and Time-Frequency Representation in Voltage Source Converter-High Voltage Direct Current System.

PubMed

Liu, Ying-Pei; Liang, Hai-Ping; Gao, Zhong-Ke

2015-01-01

In order to improve the performance of voltage source converter-high voltage direct current (VSC-HVDC) system, we propose an improved auto-disturbance rejection control (ADRC) method based on least squares support vector machines (LSSVM) in the rectifier side. Firstly, we deduce the high frequency transient mathematical model of VSC-HVDC system. Then we investigate the ADRC and LSSVM principles. We ignore the tracking differentiator in the ADRC controller aiming to improve the system dynamic response speed. On this basis, we derive the mathematical model of ADRC controller optimized by LSSVM for direct current voltage loop. Finally we carry out simulations to verify the feasibility and effectiveness of our proposed control method. In addition, we employ the time-frequency representation methods, i.e., Wigner-Ville distribution (WVD) and adaptive optimal kernel (AOK) time-frequency representation, to demonstrate our proposed method performs better than the traditional method from the perspective of energy distribution in time and frequency plane.

The Application of Auto-Disturbance Rejection Control Optimized by Least Squares Support Vector Machines Method and Time-Frequency Representation in Voltage Source Converter-High Voltage Direct Current System

PubMed Central

Gao, Zhong-Ke

2015-01-01

In order to improve the performance of voltage source converter-high voltage direct current (VSC-HVDC) system, we propose an improved auto-disturbance rejection control (ADRC) method based on least squares support vector machines (LSSVM) in the rectifier side. Firstly, we deduce the high frequency transient mathematical model of VSC-HVDC system. Then we investigate the ADRC and LSSVM principles. We ignore the tracking differentiator in the ADRC controller aiming to improve the system dynamic response speed. On this basis, we derive the mathematical model of ADRC controller optimized by LSSVM for direct current voltage loop. Finally we carry out simulations to verify the feasibility and effectiveness of our proposed control method. In addition, we employ the time-frequency representation methods, i.e., Wigner-Ville distribution (WVD) and adaptive optimal kernel (AOK) time-frequency representation, to demonstrate our proposed method performs better than the traditional method from the perspective of energy distribution in time and frequency plane. PMID:26098556

Excimer laser annealing for low-voltage power MOSFET

NASA Astrophysics Data System (ADS)

Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim

2016-08-01

Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

Investigation of the Effects of Facility Background Pressure on the Performance and Voltage-Current Characteristics of the High Voltage Hall Accelerator

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Spektor, Rostislav

2014-01-01

The National Aeronautics and Space Administration (NASA) Science Mission Directorate In-Space Propulsion Technology office is sponsoring NASA Glenn Research Center to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. A study was conducted to assess the impact of varying the facility background pressure on the High Voltage Hall Accelerator (HiVHAc) thruster performance and voltage-current characteristics. This present study evaluated the HiVHAc thruster performance in the lowest attainable background pressure condition at NASA GRC Vacuum Facility 5 to best simulate space-like conditions. Additional tests were performed at selected thruster operating conditions to investigate and elucidate the underlying physics that change during thruster operation at elevated facility background pressure. Tests were performed at background pressure conditions that are three and ten times higher than the lowest realized background pressure. Results indicated that the thruster discharge specific impulse and efficiency increased with elevated facility background pressure. The voltage-current profiles indicated a narrower stable operating region with increased background pressure. Experimental observations of the thruster operation indicated that increasing the facility background pressure shifted the ionization and acceleration zones upstream towards the thrusters anode. Future tests of the HiVHAc thruster are planned at background pressure conditions that are expected to be two to three times lower than what was achieved during this test campaign. These tests will not only assess the impact of reduced facility background pressure on thruster performance, voltage-current characteristics, and plume properties; but will also attempt to quantify the magnitude of the ionization.

Ion extraction capabilities of closely spaced grids

NASA Technical Reports Server (NTRS)

Rovang, D. C.; Wilbur, P. J.

1982-01-01

The ion extraction capabilities of accelerator systems with small screen hole diameters (less than 2.0 mm) are investigated at net-accelerating voltages of 100, 300, and 500 V. Results show that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 1.0 mm, but impingement-limited performance was found to be dependent on the grid separation distance, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained using small hole diameters and closely spaced grids indicate a new mode of grid operation where high current density operation can be achieved with a specified net acceleration voltage by operating the grids at a high rather than low net-to-total acceleration voltage. Beam current densities as high as 25 mA/sq cm were obtained using grids with 1.0 mm diameter holes operating at a net accelerating voltage of 500 V.

Method and Apparatus for In-Situ Health Monitoring of Solar Cells in Space

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2012-01-01

Some embodiments of the present invention describe an apparatus that includes an oscillator, a ramp generator, and an inverter. The apparatus includes an oscillator, an inverter, and a ramp generator. The oscillator is configured to generate a waveform comprising a low time and a high time. The inverter is configured to receive the waveform generated by the oscillator, and invert the waveform. The ramp generator configured to increase a gate control voltage of a transistor connected to a solar cell, and rapidly decrease the gate control voltage of the transistor. During the low time of the waveform, a measurement of a current and a voltage of the solar cell is performed as the current and voltage of the solar cell are transmitted through a first channel and to a second channel. During the high time of the waveform, a measurement of a current of a shorted cell and a voltage reference is performed as the current of the shorted cell and the voltage reference are transmitted through the first channel and the second channel.

A soft-switching coupled inductor bidirectional DC-DC converter with high-conversion ratio

NASA Astrophysics Data System (ADS)

Chao, Kuei-Hsiang; Jheng, Yi-Cing

2018-01-01

A soft-switching bidirectional DC-DC converter is presented herein as a way to improve the conversion efficiency of a photovoltaic (PV) system. Adoption of coupled inductors enables the presented converter not only to provide a high-conversion ratio but also to suppress the transient surge voltage via the release of the energy stored in leakage flux of the coupled inductors, and the cost can kept down consequently. A combined use of a switching mechanism and an auxiliary resonant branch enables the converter to successfully perform zero-voltage switching operations on the main switches and improves the efficiency accordingly. It was testified by experiments that our proposed converter works relatively efficiently in full-load working range. Additionally, the framework of the converter intended for testifying has high-conversion ratio. The results of a test, where a generating system using PV module array coupled with batteries as energy storage device was used as the low-voltage input side, and DC link was used as high-voltage side, demonstrated our proposed converter framework with high-conversion ratio on both high-voltage and low-voltage sides.

High voltage testing for the Majorana Demonstrator

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; ...

2016-04-04

The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of themore » high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

High voltage testing for the Majorana Demonstrator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, Isaac J.; Avignone, F. T.

2016-07-01

The Majorana Collaboration is constructing theMajorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of theMajorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path,more » including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during theMajorana Demonstrator commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

NASA Technical Reports Server (NTRS)

Bever, R. S.

1984-01-01

Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

High performance printed oxide field-effect transistors processed using photonic curing.

PubMed

Garlapati, Suresh Kumar; Marques, Gabriel Cadilha; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Tahoori, Mehdi Baradaran; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-08

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV-visible light and UV-laser), we demonstrate facile fabrication of high performance In 2 O 3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

High performance printed oxide field-effect transistors processed using photonic curing

NASA Astrophysics Data System (ADS)

Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-01

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

Review of adult electrical burn injury outcomes worldwide: An analysis of low- voltage versus high-voltage electrical injury

PubMed Central

Shih, Jessica G; Shahrokhi, Shahriar; Jeschke, Marc G

2016-01-01

Objective To review low-voltage versus high-voltage electrical burn complications in adults, and to identify novel areas that are not recognized to improve outcomes. Methods An extensive literature search on electrical burn injuries was performed using OVID Medline, PubMed and EMBASE databases from 1946–2015. Studies relating to outcomes of electrical injury in the adult population (≥18 years of age) were included in the study. Results Forty-one single-institution publications with a total of 5485 electrical injury patients were identified and included in the present study. 18.0% of these patients were low-voltage injuries (LVI), 38.3% high-voltage injuries (HVI) and 43.7% with voltage not otherwise specified (NOS). Forty-four percent of studies did not characterize outcomes according to low versus high-voltage injuries. Reported outcomes include surgical, medical, post-traumatic, and other (long-term/psychological/rehabilitative), all of which report greater incidence rates in HVI compared to LVI. Only two studies report on psychological outcomes such as post-traumatic stress disorder. Mortality from electrical injuries are 2.6% in LVI, 5.2% in HVI and 3.7% in NOS. Coroner’s reports reveal a ratio of 2.4:1 for deaths caused by low-voltage injury compared to high voltage-injury. Conclusions High-voltage injuries lead to greater morbidity and mortality than low-voltage injuries. However, the results of the coroner’s reports suggest that immediate mortality from low-voltage injury may be underestimated. Furthermore, based on the data of this analysis we conclude that the majority of studies report electrical injury outcomes, however, the majority of them do not analyze complications by low versus high voltage and often lack long-term psychological and rehabilitation outcomes post-electrical injury indicating that a variety of central aspects are not being evaluated or assessed. PMID:27359191

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

High Voltage Design Considerations for the Electrostatic Septum for the Mu2e Beam Resonant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alvarez, Matthew L.; Jensen, C.; Morris, D.

aTwo electrostatic septa (ESS) are being designed for the slow extraction of 8GeV proton beam for the Mu2e experiment at Fermilab. Special attention is given to the high voltage components that affect the performance of the septa. The components under consideration are the high voltage (HV) feedthrough, cathode standoff (CS), and clearing electrode ceramic standoffs (CECS). Previous experience with similar HV systems at Fermilab was used to define the evaluation criteria of the design of the high voltage components. Using electric field simulation software, high E-field intensities on the components and integrated field strength along the surface of the dielectricmore » material were minimized. Here we discuss the limitations found and improvements made based on those studies.« less

Performance and Environmental Test Results of the High Voltage Hall Accelerator Engineering Development Unit

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Shastry, Rohit; Pinero, Luis; Peterson, Todd; Mathers, Alex

2012-01-01

NASA Science Mission Directorate's In-Space Propulsion Technology Program is sponsoring the development of a 3.5 kW-class engineering development unit Hall thruster for implementation in NASA science and exploration missions. NASA Glenn and Aerojet are developing a high fidelity high voltage Hall accelerator that can achieve specific impulse magnitudes greater than 2,700 seconds and xenon throughput capability in excess of 300 kilograms. Performance, plume mappings, thermal characterization, and vibration tests of the high voltage Hall accelerator engineering development unit have been performed. Performance test results indicated that at 3.9 kW the thruster achieved a total thrust efficiency and specific impulse of 58%, and 2,700 sec, respectively. Thermal characterization tests indicated that the thruster component temperatures were within the prescribed material maximum operating temperature limits during full power thruster operation. Finally, thruster vibration tests indicated that the thruster survived the 3-axes qualification full-level random vibration test series. Pre and post-vibration test performance mappings indicated almost identical thruster performance. Finally, an update on the development progress of a power processing unit and a xenon feed system is provided.

OB's high voltage laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1966-01-01

The January issue of Hi-Tension News provides a detailed description of the advanced surge test facilities and procedures in daily operation at the OB High Voltage Laboratory in Barberton, Ohio. Technical competences achieved in this laboratory contribute to the essential factors of design confirmation to basic studies of ehv insulation systems, conductor and hardware performance, and optimum tower construction. Known throughout the industry for authenticity of its full scale, all weather outdoor testing, OB's High Voltage Laboratory is a full-fledged participant in the NEMA-sponsored program to make testing facilities available on a cooperative basis.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Evaluation of high temperature dielectric films for high voltage power electronic applications

NASA Technical Reports Server (NTRS)

Suthar, J. L.; Laghari, J. R.

1992-01-01

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

Quantitative Analysis of Color Differences within High Contrast, Low Power Reversible Electrophoretic Displays

DOE PAGES

Giera, Brian; Bukosky, Scott; Lee, Elaine; ...

2018-01-23

Here, quantitative color analysis is performed on videos of high contrast, low power reversible electrophoretic deposition (EPD)-based displays operated under different applied voltages. This analysis is coded in an open-source software, relies on a color differentiation metric, ΔE * 00, derived from digital video, and provides an intuitive relationship between the operating conditions of the devices and their performance. Time-dependent ΔE * 00 color analysis reveals color relaxation behavior, recoverability for different voltage sequences, and operating conditions that can lead to optimal performance.

Quantitative Analysis of Color Differences within High Contrast, Low Power Reversible Electrophoretic Displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giera, Brian; Bukosky, Scott; Lee, Elaine

Here, quantitative color analysis is performed on videos of high contrast, low power reversible electrophoretic deposition (EPD)-based displays operated under different applied voltages. This analysis is coded in an open-source software, relies on a color differentiation metric, ΔE * 00, derived from digital video, and provides an intuitive relationship between the operating conditions of the devices and their performance. Time-dependent ΔE * 00 color analysis reveals color relaxation behavior, recoverability for different voltage sequences, and operating conditions that can lead to optimal performance.

High Power Silicon Carbide (SiC) Power Processing Unit Development

NASA Technical Reports Server (NTRS)

Scheidegger, Robert J.; Santiago, Walter; Bozak, Karin E.; Pinero, Luis R.; Birchenough, Arthur G.

2015-01-01

NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

Investigation of the Effects of Facility Background Pressure on the Performance and Voltage-Current Characteristics of the High Voltage Hall Accelerator

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Spektor, Rostislav

2014-01-01

The National Aeronautics and Space Administration (NASA) Science Mission Directorate In-Space Propulsion Technology office is sponsoring NASA Glenn Research Center to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. A study was conducted to assess the impact of varying the facility background pressure on the High Voltage Hall Accelerator (HiVHAc) thruster performance and voltage-current characteristics. This present study evaluated the HiVHAc thruster performance in the lowest attainable background pressure condition at NASA GRC Vacuum Facility 5 to best simulate space-like conditions. Additional tests were performed at selected thruster operating conditions to investigate and elucidate the underlying physics that change during thruster operation at elevated facility background pressure. Tests were performed at background pressure conditions that are three and ten times higher than the lowest realized background pressure. Results indicated that the thruster discharge specific impulse and efficiency increased with elevated facility background pressure. The voltage-current profiles indicated a narrower stable operating region with increased background pressure. Experimental observations of the thruster operation indicated that increasing the facility background pressure shifted the ionization and acceleration zones upstream towards the thruster's anode. Future tests of the HiVHAc thruster are planned at background pressure conditions that are expected to be two to three times lower than what was achieved during this test campaign. These tests will not only assess the impact of reduced facility background pressure on thruster performance, voltage-current characteristics, and plume properties; but will also attempt to quantify the magnitude of the ionization and acceleration zones upstream shifting as a function of increased background pressure.

The design and development of low- and high-voltage ASICs for space-borne CCD cameras

NASA Astrophysics Data System (ADS)

Waltham, N.; Morrissey, Q.; Clapp, M.; Bell, S.; Jones, L.; Torbet, M.

2017-12-01

The CCD remains the pre-eminent visible and UV wavelength image sensor in space science, Earth and planetary remote sensing. However, the design of space-qualified CCD readout electronics is a significant challenge with requirements for low-volume, low-mass, low-power, high-reliability and tolerance to space radiation. Space-qualified components are frequently unavailable and up-screened commercial components seldom meet project or international space agency requirements. In this paper, we describe an alternative approach of designing and space-qualifying a series of low- and high-voltage mixed-signal application-specific integrated circuits (ASICs), the ongoing development of two low-voltage ASICs with successful flight heritage, and two new high-voltage designs. A challenging sub-system of any CCD camera is the video processing and digitisation electronics. We describe recent developments to improve performance and tolerance to radiation-induced single event latchup of a CCD video processing ASIC originally developed for NASA's Solar Terrestrial Relations Observatory and Solar Dynamics Observatory. We also describe a programme to develop two high-voltage ASICs to address the challenges presented with generating a CCD's bias voltages and drive clocks. A 0.35 μm, 50 V tolerant, CMOS process has been used to combine standard low-voltage 3.3 V transistors with high-voltage 50 V diffused MOSFET transistors that enable output buffers to drive CCD bias drains, gates and clock electrodes directly. We describe a CCD bias voltage generator ASIC that provides 24 independent and programmable 0-32 V outputs. Each channel incorporates a 10-bit digital-to-analogue converter, provides current drive of up to 20 mA into loads of 10 μF, and includes current-limiting and short-circuit protection. An on-chip telemetry system with a 12-bit analogue-to-digital converter enables the outputs and multiple off-chip camera voltages to be monitored. The ASIC can drive one or more CCDs and replaces the many discrete components required in current cameras. We also describe a CCD clock driver ASIC that provides six independent and programmable drivers with high-current capacity. The device enables various CCD clock parameters to be programmed independently, for example the clock-low and clock-high voltage levels, and the clock-rise and clock-fall times, allowing configuration for serial clock frequencies in the range 0.1-2 MHz and image clock frequencies in the range 10-100 kHz. Finally, we demonstrate the impact and importance of this technology for the development of compact, high-performance and low-power integrated focal plane electronics.

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarthy, M. A.; Liu, B.; Donoghue, E. P.

2011-01-01

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

Upgrade of the TITAN EBIT High Voltage Operation

NASA Astrophysics Data System (ADS)

Foster, Matt; Titan Collaboration

2016-09-01

TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is a setup dedicated to highly precise mass measurements of short-lived isotopes down to 10ms. TITAN's Electron Beam Ion Trap (EBIT) is a charge breeder integrated into the setup to perform in-trap decay spectroscopy of highly charged ions and increase the precision of mass measurements. In its previous configuration TITAN's EBIT could not fulfil its maximum design specification due to high voltage safety restrictions, limiting its obtainable charge states. A recently completed upgrade of the high voltage operation that will allow the EBIT to fulfil its design specification and achieve higher charge states for heavier species is undergoing preliminary tests with stable beam. Simulations were performed to optimise the injection and extraction efficiency at high voltage and initial tests have involved using a Ge detector to identify x-rays produced by charge breeding stable ions. Future work comprises exploring electron capture rates of Ne-, He- and H-like charge states of 64Cu and higher masses, which were not previously accessible. The function of the EBIT within the TITAN setup, the work carried out on the upgrade thus far and its scope for future work will be presented.

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio andmore » good memory retention.« less

30 CFR 75.705-10 - Tying into energized high-voltage surface circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

....705-10 Tying into energized high-voltage surface circuits. If the work of forming an additional... performing such work must wear and employ all of the protective equipment and clothing required under the... designed for such purpose and must be adequately insulated and be maintained to protect such person from...

Measurement of high-voltage and radiation-damage limitations to advanced solar array performance

NASA Technical Reports Server (NTRS)

Guidice, D. A.; Severance, P. S.; Keinhardt, K. C.

1991-01-01

A description is given of the reconfigured Photovoltaic Array Space Power (PASP) Plus experiment: its objectives, solar-array complement, and diagnostic sensors. Results from a successful spaceflight will lead to a better understanding of high-voltage and radiation-damage limitations in the operation of new-technology solar arrays.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.; O'Brien, Dennis W.

1995-01-01

A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.; O'Brien, Dennis W.

1996-01-01

A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.

CFAVC scheme for high frequency series resonant inverter-fed domestic induction heating system

NASA Astrophysics Data System (ADS)

Nagarajan, Booma; Reddy Sathi, Rama

2016-01-01

This article presents the investigations on the constant frequency asymmetric voltage cancellation control in the AC-AC resonant converter-fed domestic induction heating system. Conventional fixed frequency control techniques used in the high frequency converters lead to non-zero voltage switching operation and reduced output power. The proposed control technique produces higher output power than the conventional fixed-frequency control strategies. In this control technique, zero-voltage-switching operation is maintained during different duty cycle operation for reduction in the switching losses. Complete analysis of the induction heating power supply system with asymmetric voltage cancellation control is discussed in this article. Simulation and experimental study on constant frequency asymmetric voltage cancellation (CFAVC)-controlled full bridge series resonant inverter is performed. Time domain simulation results for the open and closed loop of the system are obtained using MATLAB simulation tool. The simulation results prove the control of voltage and power in a wide range. PID controller-based closed loop control system achieves the voltage regulation of the proposed system for the step change in load. Hardware implementation of the system under CFAVC control is done using the embedded controller. The simulation and experimental results validate the performance of the CFAVC control technique for series resonant-based induction cooking system.

Flexible electronic control system based on FPGA for liquid-crystal microlens

NASA Astrophysics Data System (ADS)

Zhang, Bo; Xin, Zhaowei; Li, Dapeng; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

Traditional imaging based on common optical lens can only be used to collect intensity information of incident beams, but actually lightwave also carries other mode information about targets and environment, including: spectrum, wavefront, and depth of target, and so on. It is very important to acquire those information mentioned for efficiently detecting and identifying targets in complex background. There is a urgent need to develop new high-performance optical imaging components. The liquid-crystal microlens (LCMs) only by applying spatial electrical field to change optical performance, have demonstrated remarkable advantages comparing conventional lenses, and therefore show a widely application prospect. Because the physical properties of the spatial electric fields between electrode plates in LCMs are directly related to the light-field performances of LCMs, the quality of voltage signal applied to LCMs needs high requirements. In this paper, we design and achieve a new type of digital voltage equipment with a wide adjustable voltage range and high precise voltage to effectively drive and adjust LCMs. More importantly, the device primarily based on field-programmable gate array(FPGA) can generate flexible and stable voltage signals to cooperate with the various functions of LCMs. Our experiments show that through the electronic control system, the LCMs already realize several significant functions including: electrically swing focus, wavefront imaging, electrically tunable spectral imaging and light-field imaging.

Coaxial-type water load for measuring high voltage, high current and short pulse of a compact Marx system for a high power microwave source

NASA Astrophysics Data System (ADS)

Han, Jaeeun; Kim, Jung-ho; Park, Sang-duck; Yoon, Moohyun; Park, Soo Yong; Choi, Do Won; Shin, Jin Woo; So, Joon Ho

2009-11-01

A coaxial-type water load was used to measure the voltage output from a Marx generator for a high power microwave source. This output had a rise time of 20 ns, a pulse duration of a few hundred ns, and an amplitude up to 500 kV. The design of the coaxial water load showed that it is an ideal resistive divider and can also accurately measure a short pulse. Experiments were performed to test the performance of the Marx generator with the calibrated coaxial water load.

A low voltage submillisecond-response polymer network liquid crystal spatial light modulator

NASA Astrophysics Data System (ADS)

Sun, Jie; Wu, Shin-Tson; Haseba, Yasuhiro

2014-01-01

We report a low voltage and highly transparent polymer network liquid crystal (PNLC) with submillisecond response time. By employing a large dielectric anisotropy LC host JC-BP07N, we have lowered the V2π voltage to 23 V at λ = 514 nm. This will enable PNLC to be integrated with a high resolution liquid-crystal-on-silicon spatial light modulator, in which the maximum voltage is 24 V. A simple model correlating PNLC performance with its host LC is proposed and validated experimentally. By optimizing the domain size, we can achieve V2π < 15 V with some compromises in scattering and response time.

1,3,6-Hexanetricarbonitrile as electrolyte additive for enhancing electrochemical performance of high voltage Li-rich layered oxide cathode

NASA Astrophysics Data System (ADS)

Wang, Long; Ma, Yulin; Li, Qin; Zhou, Zhenxin; Cheng, Xinqun; Zuo, Pengjian; Du, Chunyu; Gao, Yunzhi; Yin, Geping

2017-09-01

1,3,6-Hexanetricarbonitrile (HTN) has been investigated as an electrolyte additive to improve the electrochemical performance of the Li1.2Ni0.13Co0.13Mn0.54O2 cathode at high operating voltage (4.8 V). Linear sweep voltammetry (LSV) results indicate that HTN can improve the oxidation potential of the electrolyte. The influences of HTN on the electrochemical behaviors and surface properties of the cathode at high voltage have been investigated by galvanostatic charge/discharge test, electrochemical impedance spectroscopy (EIS), and ex-situ physical characterizations. Charge-discharge results demonstrate that the capacity retention of the Li1.2Ni0.13Co0.13Mn0.54O2 cathode in 1% HTN-containing electrolyte after 150 cycles at 0.5 C is improved to 92.3%, which is much higher than that in the standard electrolyte (ED). Combined with the theoretical calculation, ICP tests, XRD and XPS analysis, more stable and homogeneous interface film is confirmed to form on the cathode surface with incorporation of HTN, meanwhile, the electrolyte decomposition and the cathode structural destruction are restrained effectively upon cycling at high voltage, leading to improved electrochemical performance of Li1.2Ni0.13Co0.13Mn0.54O2 cathode.

Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, G.; Wu, S. C.; Zhou, Z. B.

2013-12-15

A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup −8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order ofmore » magnitude lower.« less

The interaction of spacecraft high voltage power systems with the space plasma environment

NASA Technical Reports Server (NTRS)

Domitz, S.; Grier, N. T.

1974-01-01

Research work has shown that the interaction of a spacecraft and its high voltage power systems with the space plasma environment can result in harmful power loss and damage to insulators and metal surfaces. Insulator and solar panel tests were performed and flight tests are planned. High voltage power processing equipment was shown to be affected by power loss, and by transients due to plasma interactions. Power loss was determined to be roughly proportional to the square of the voltage and increases approximately as the square root of the area. Kapton, Teflon, and glass were found to be satisfactory insulating materials and it is concluded that for large space power stations should consider the effect of large pinhole currents.

Nickel-Hydrogen Battery Fault Clearing at Low State of Charge

NASA Technical Reports Server (NTRS)

Lurie, C.

1997-01-01

Fault clearing currents were achieved and maintained at discharge rates from C/2 to C/3 at high and low states of charge. The fault clearing plateau voltage is strong function of: discharge current, and voltage-prior-to-the-fault-clearing-event and a weak function of state of charge. Voltage performance, for the range of conditions reported, is summarized.

Performance documentation of the engineering model 30-cm diameter thruster

NASA Technical Reports Server (NTRS)

Bechtel, R. T.; Rawlin, V. K.

1976-01-01

The results of extensive testing of two 30-cm ion thrusters which are virtually identical to the 900 series Engineering Model Thruster in an ongoing 15,000-hour life test are presented. Performance data for the nominal fullpower (2650 W) operating point; performance sensitivities to discharge voltage, discharge losses, accelerator voltage, and magnetic baffle current; and several power throttling techniques (maximum Isp, maximum thrust/power ratio, and two cases in between are included). Criteria for throttling are specified in terms of the screen power supply envelope, thruster operating limits, and control stability. In addition, reduced requirements for successful high voltage recycles are presented.

High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

NASA Astrophysics Data System (ADS)

Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

2015-12-01

In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

COTS Ceramic Chip Capacitors: An Evaluation of the Parts and Assurance Methodologies

NASA Technical Reports Server (NTRS)

Brusse, Jay A.; Sampson, Michael J.

2004-01-01

Commercial-Off-The-Shelf (COTS) multilayer ceramic chip capacitors (MLCCs) are continually evolving to reduce physical size and increase volumetric efficiency. Designers of high reliability aerospace and military systems are attracted to these attributes of COTS MLCCs and would like to take advantage of them while maintaining the high standards for long-term reliable operation they are accustomed io when selecting military qualified established reliability (MIL-ER) MLCCs. However, MIL-ER MLCCs are not available in the full range of small chip sizes with high capacitance as found in today's COTS MLCCs. The objectives for this evaluation were to assess the long-term performance of small case size COTS MLCCs and to identify effective, lower-cost product assurance methodologies. Fifteen (15) lots of COTS X7R dielectric MLCCs from four (4) different manufacturers and two (2) MIL-ER BX dielectric MLCCs from two (2) of the same manufacturers were evaluated. Both 0805 and 0402 chip sizes were included. Several voltage ratings were tested ranging from a high of 50 volts to a low of 6.3 volts. The evaluation consisted of a comprehensive screening and qualification test program based upon MIL-PRF-55681 (i.e., voltage conditioning, thermal shock, moisture resistance, 2000-hour life test, etc.). In addition, several lot characterization tests were performed including Destructive Physical Analysis (DPA), Highly Accelerated Life Test (HALT) and Dielectric Voltage Breakdown Strength. The data analysis included a comparison of the 2000-hour life test results (used as a metric for long-term performance) relative to the screening and characterization test results. Results of this analysis indicate that the long-term life performance of COTS MLCCs is variable -- some lots perform well, some lots perform poorly. DPA and HALT were found to be promising lot characterization tests to identify substandard COTS MLCC lots prior to conducting more expensive screening and qualification tests. The results indicate that lot- specific screening and qualification are still recommended for high reliability applications. One significant and concerning observation is that MIL- type voltage conditioning (100 hours at twice rated voltage, 125 C) was not an effective screen in removing infant mortality parts for the particular lots of COTS MLCCs evaluated.

High-voltage plasma interactions calculations using NASCAP/LEO

NASA Technical Reports Server (NTRS)

Mandell, M. J.; Katz, I.

1990-01-01

This paper reviews four previous simulations (two laboratory and two space-flight) of interactions of a high-voltage spacecraft with a plasma under low-earth orbit conditions, performed using a three-dimensional computer code NASCAP/LEO. Results show that NASCAP/LEO can perform meaningful simulations of high-voltage plasma interactions taking into account three-dimensional effects of geometry, spacecraft motion, and magnetic field. Two new calculations are presented: (1) for current collection by 1-mm pinholes in wires (showing that a pinhole in a wire can collect far more current than a similar pinhole in a flat plate); and (2) current collection by Charge-2 mother vehicle launched in December 1985. It is shown that the Charge-2 calculations predicted successfully ion collection at negative bias, the floating potential of a probe outside or inside the sheath under negative bias conditions, and magnetically limited electron collection under electron beam operation at high altitude.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

PubMed

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

Digitally gain controlled linear high voltage amplifier for laboratory applications.

PubMed

Koçum, C

2011-08-01

The design of a digitally gain controlled high-voltage non-inverting bipolar linear amplifier is presented. This cost efficient and relatively simple circuit has stable operation range from dc to 90 kHz under the load of 10 kΩ and 39 pF. The amplifier can swing up to 360 V(pp) under these conditions and it has 2.5 μs rise time. The gain can be changed by the aid of JFETs. The amplifiers have been realized using a combination of operational amplifiers and high-voltage discrete bipolar junction transistors. The circuit details and performance characteristics are discussed.

Case report of a high voltage electrical injury and review of the indications for early fasciotomy in limb salvage of an electrically injured limb

PubMed Central

Huei, T.J.; Mohd Yussof, S.J.; Lip, H.T.C.; Salina, I.

2017-01-01

Summary Electrical injuries make up a relatively small portion of burn injuries. Safety measures in place on domestic electricity supply have reduced the occurrence of high voltage electrical injuries. We present the case of a young man who sustained a high voltage electrical injury on all four limbs. Early fasciotomy was performed on both his hands and forearms. Despite early compartment release, the left upper limb deteriorated and required amputation. In this article we discuss the indications, outcomes and complications of early fasciotomy. PMID:29021730

Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

PubMed

Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

2016-07-20

We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

The Series Connected Buck Boost Regulator Concept for High Efficiency Light Weight DC Voltage Regulation

NASA Technical Reports Server (NTRS)

Birchenough, Arthur G.

2003-01-01

Improvements in the efficiency and size of DC-DC converters have resulted from advances in components, primarily semiconductors, and improved topologies. One topology, which has shown very high potential in limited applications, is the Series Connected Boost Unit (SCBU), wherein a small DC-DC converter output is connected in series with the input bus to provide an output voltage equal to or greater than the input voltage. Since the DC-DC converter switches only a fraction of the power throughput, the overall system efficiency is very high. But this technique is limited to applications where the output is always greater than the input. The Series Connected Buck Boost Regulator (SCBBR) concept extends partial power processing technique used in the SCBU to operation when the desired output voltage is higher or lower than the input voltage, and the implementation described can even operate as a conventional buck converter to operate at very low output to input voltage ratios. This paper describes the operation and performance of an SCBBR configured as a bus voltage regulator providing 50 percent voltage regulation range, bus switching, and overload limiting, operating above 98 percent efficiency. The technique does not provide input-output isolation.

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; ...

2015-07-01

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

DOE Office of Scientific and Technical Information (OSTI.GOV)

BastaniNejad, Mahzad, E-mail: Mahhzad@gmail.com; Elmustafa, Abdelmageed A.; Forman, Eric

DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (∼nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

Power Quality Improvement Using an Enhanced Network-Side-Shunt-Connected Dynamic Voltage Restorer

NASA Astrophysics Data System (ADS)

Fereidouni, Alireza; Masoum, Mohammad A. S.; Moghbel, Moayed

2015-10-01

Among the four basic dynamic voltage restorer (DVR) topologies, the network-side shunt-connected DVR (NSSC-DVR) has a relatively poor performance and is investigated in this paper. A new configuration is proposed and implemented for NSSC-DVR to enhance its performance in compensating (un)symmetrical deep and long voltage sags and mitigate voltage harmonics. The enhanced NSSC-DVR model includes a three-phase half-bridge semi-controlled network-side-shunt-connected rectifier and a three-phase full-bridge series-connected inverter implemented with a back-to-back configuration through a bidirectional buck-boost converter. The network-side-shunt-connected rectifier is employed to inject/draw the required energy by NSSC-DVR to restore the load voltage to its pre-fault value under sag/swell conditions. The buck-boost converter is responsible for maintaining the DC-link voltage of the series-connected inverter at its designated value in order to improve the NSSC-DVR capability in compensating deep and long voltage sags/swells. The full-bridge series-connected inverter permits to compensate unbalance voltage sags containing zero-sequence component. The harmonic compensation of the load voltage is achieved by extracting harmonics from the distorted network voltage using an artificial neural network (ANN) method called adaptive linear neuron (Adaline) strategy. Detailed simulations are performed by SIMULINK/MATLAB software for six case studies to verify the highly robustness of the proposed NSSC-DVR model under various conditions.

Large-Area High-Performance Flexible Pressure Sensor with Carbon Nanotube Active Matrix for Electronic Skin.

PubMed

Nela, Luca; Tang, Jianshi; Cao, Qing; Tulevski, George; Han, Shu-Jen

2018-03-14

Artificial "electronic skin" is of great interest for mimicking the functionality of human skin, such as tactile pressure sensing. Several important performance metrics include mechanical flexibility, operation voltage, sensitivity, and accuracy, as well as response speed. In this Letter, we demonstrate a large-area high-performance flexible pressure sensor built on an active matrix of 16 × 16 carbon nanotube thin-film transistors (CNT TFTs). Made from highly purified solution tubes, the active matrix exhibits superior flexible TFT performance with high mobility and large current density, along with a high device yield of nearly 99% over 4 inch sample area. The fully integrated flexible pressure sensor operates within a small voltage range of 3 V and shows superb performance featuring high spatial resolution of 4 mm, faster response than human skin (<30 ms), and excellent accuracy in sensing complex objects on both flat and curved surfaces. This work may pave the road for future integration of high-performance electronic skin in smart robotics and prosthetic solutions.

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Astrophysics Data System (ADS)

Dinetta, L. C.; Hannon, M. H.

1995-10-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.

1995-01-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Low-Voltage Continuous Electrospinning Patterning.

PubMed

Li, Xia; Li, Zhaoying; Wang, Liyun; Ma, Guokun; Meng, Fanlong; Pritchard, Robyn H; Gill, Elisabeth L; Liu, Ye; Huang, Yan Yan Shery

2016-11-30

Electrospinning is a versatile technique for the construction of microfibrous and nanofibrous structures with considerable potential in applications ranging from textile manufacturing to tissue engineering scaffolds. In the simplest form, electrospinning uses a high voltage of tens of thousands volts to draw out ultrafine polymer fibers over a large distance. However, the high voltage limits the flexible combination of material selection, deposition substrate, and control of patterns. Prior studies show that by performing electrospinning with a well-defined "near-field" condition, the operation voltage can be decreased to the kilovolt range, and further enable more precise patterning of fibril structures on a planar surface. In this work, by using solution dependent "initiators", we demonstrate a further lowering of voltage with an ultralow voltage continuous electrospinning patterning (LEP) technique, which reduces the applied voltage threshold to as low as 50 V, simultaneously permitting direct fiber patterning. The versatility of LEP is shown using a wide range of combination of polymer and solvent systems for thermoplastics and biopolymers. Novel functionalities are also incorporated when a low voltage mode is used in place of a high voltage mode, such as direct printing of living bacteria; the construction of suspended single fibers and membrane networks. The LEP technique reported here should open up new avenues in the patterning of bioelements and free-form nano- to microscale fibrous structures.

Tesla coil discharges guided by femtosecond laser filaments in air

NASA Astrophysics Data System (ADS)

Brelet, Yohann; Houard, Aurélien; Arantchouk, Leonid; Forestier, Benjamin; Liu, Yi; Prade, Bernard; Carbonnel, Jérôme; André, Yves-Bernard; Mysyrowicz, André

2012-04-01

A Tesla coil generator was designed to produce high voltage pulses oscillating at 100 kHz synchronisable with a nanosecond temporal jitter. Using this compact high voltage generator, we demonstrate reproducible meter long discharges in air at a repetition rate of 1 Hz. Triggering and guiding of the discharges are performed in air by femtosecond laser filaments.

Daikin Advanced Lithium Ion Battery Technology – High Voltage Electrolyte - REVISED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sunstrom, Joseph; Hendershot, Ron E.

An evaluation of high voltage electrolytes which contain fluorochemicals as solvents/additive has been completed with the objective of formulating a safe, stable electrolyte capable of operation to 4.6 V. Stable cycle performance has been demonstrated in LiNi1/3Mn1/3Co1/3O2 (NMC111)/graphite cells to 4.5 V. The ability to operate at high voltage results in significant energy density gain (>30%) which would manifest as longer battery life resulting in higher range for electric vehicles. Alternatively, a higher energy density battery can be made smaller without sacrificing existing energy. In addition, the fluorinated electrolytes examined showed better safety performance when tested in abuse conditions. Themore » results are promising for future advanced battery development for vehicles as well as other applications.« less

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider

PubMed Central

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-01-01

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids. PMID:29149085

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

PubMed

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-11-17

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

Compact microwave ion source for industrial applications.

PubMed

Cho, Yong-Sub; Kim, Dae-Il; Kim, Han-Sung; Seol, Kyung-Tae; Kwon, Hyeok-Jung; Hong, In-Seok

2012-02-01

A 2.45 GHz microwave ion source for ion implanters has many good properties for industrial application, such as easy maintenance and long lifetime, and it should be compact for budget and space. But, it has a dc current supply for the solenoid and a rf generator for plasma generation. Usually, they are located on high voltage platform because they are electrically connected with beam extraction power supply. Using permanent magnet solenoid and multi-layer dc break, high voltage deck and high voltage isolation transformer can be eliminated, and the dose rate on targets can be controlled by pulse duty control with semiconductor high voltage switch. Because the beam optics does not change, beam transfer components, such as focusing elements and beam shutter, can be eliminated. It has shown the good performances in budget and space for industrial applications of ion beams.

Completely explosive ultracompact high-voltage nanosecond pulse-generating system

NASA Astrophysics Data System (ADS)

Shkuratov, Sergey I.; Talantsev, Evgueni F.; Baird, Jason; Rose, Millard F.; Shotts, Zachary; Altgilbers, Larry L.; Stults, Allen H.

2006-04-01

A conventional pulsed power technology has been combined with an explosive pulsed power technology to produce an autonomous high-voltage power supply. The power supply contained an explosive-driven high-voltage primary power source and a power-conditioning stage. The ultracompact explosive-driven primary power source was based on the physical effect of shock-wave depolarization of high-energy Pb (Zr52Ti48)O3 ferroelectric material. The volume of the energy-carrying ferroelectric elements in the shock-wave ferroelectric generators (SWFEGs) varied from 1.2 to 2.6cm3. The power-conditioning stage was based on the spiral vector inversion generator (VIG). The SWFEG-VIG system demonstrated successful operation and good performance. The amplitude of the output voltage pulse of the SWFEG-VIG system exceeded 90kV, with a rise time of 5.2ns.

Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maxson, Jared; Bazarov, Ivan; Dunham, Bruce

2014-09-15

A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. Thesemore » results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.« less

Design of a New Built-in UHF Multi-Frequency Antenna Sensor for Partial Discharge Detection in High-Voltage Switchgears.

PubMed

Zhang, Xiaoxing; Cheng, Zheng; Gui, Yingang

2016-07-26

In this study a new built-in ultrahigh frequency (UHF) antenna sensor was designed and applied in a high-voltage switchgear for partial discharge (PD) detection. The casing of the switchgear was initially used as the ground plane of the antenna sensor, which integrated the sensor into the high-voltage switchgear. The Koch snowflake patch was adopted as the radiation patch of the antenna to overcome the disadvantages of common microstrip antennas, and the feed position and the dielectric layer thickness were simulated in detail. Simulation results show that the antenna sensor possessed four resonant points with good impedance matching from 300 MHz to 1000 MHz, and it also presented good multi-frequency performance in the entire working frequency band. PD detection experiments were conducted in the high-voltage switchgear, and the fabricated antenna sensor was effectively built into the high-voltage switchgear. In order to reflect the advantages of the built-in antenna sensor, another external UHF antenna sensor was used as a comparison to simultaneously detect PD. Experimental results demonstrated that the built-in antenna sensor possessed high detection sensitivity and strong anti-interference capacity, which ensured the practicability of the design. In addition, it had more high-voltage switchgear PD detection advantages than the external sensor.

Design of a New Built-in UHF Multi-Frequency Antenna Sensor for Partial Discharge Detection in High-Voltage Switchgears

PubMed Central

Zhang, Xiaoxing; Cheng, Zheng; Gui, Yingang

2016-01-01

In this study a new built-in ultrahigh frequency (UHF) antenna sensor was designed and applied in a high-voltage switchgear for partial discharge (PD) detection. The casing of the switchgear was initially used as the ground plane of the antenna sensor, which integrated the sensor into the high-voltage switchgear. The Koch snowflake patch was adopted as the radiation patch of the antenna to overcome the disadvantages of common microstrip antennas, and the feed position and the dielectric layer thickness were simulated in detail. Simulation results show that the antenna sensor possessed four resonant points with good impedance matching from 300 MHz to 1000 MHz, and it also presented good multi-frequency performance in the entire working frequency band. PD detection experiments were conducted in the high-voltage switchgear, and the fabricated antenna sensor was effectively built into the high-voltage switchgear. In order to reflect the advantages of the built-in antenna sensor, another external UHF antenna sensor was used as a comparison to simultaneously detect PD. Experimental results demonstrated that the built-in antenna sensor possessed high detection sensitivity and strong anti-interference capacity, which ensured the practicability of the design. In addition, it had more high-voltage switchgear PD detection advantages than the external sensor. PMID:27472331

Series asymmetric supercapacitors based on free-standing inner-connection electrodes for high energy density and high output voltage.

PubMed

Tao, Jiayou; Liu, Nishuang; Rao, Jiangyu; Ding, Longwei; Al Bahrani, Majid Raissan; Li, Luying; Su, Jun; Gao, Yihua

2014-12-21

Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO(2) nanowire/carbon nanotube (CNT) composites and MoO(3) nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm(-3) at a scan rate of 2 mV s(-1) and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm(-3) at a power density of 261.4 mW cm(-3), and exhibits excellent cycling performance of 99.6% capacitance retention over 10,000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage.

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NASA Astrophysics Data System (ADS)

Houin, G.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-09-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements

High-voltage compatible, full-depleted CCD

DOEpatents

Holland, Stephen Edward

2007-09-18

A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, T.W. Jr.; Johnson, G.W.; O`Brien, D.W.

1995-05-09

A high performance capacitor is fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a ``notepad`` configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The notepad capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density. 5 figs.

High performance capacitors using nano-structure multilayer materials fabrication

DOEpatents

Barbee, T.W. Jr.; Johnson, G.W.; O`Brien, D.W.

1996-01-23

A high performance capacitor is described which is fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a ``notepad`` configuration composed of 200--300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The ``notepad`` capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density. 5 figs.

High voltage pulse ignition of mercury discharge hollow cathodes

NASA Technical Reports Server (NTRS)

Wintucky, E. G.

1973-01-01

A high voltage pulse generated by a capacitor discharge into a step-up transformer has been demonstrated capable of consistently igniting hollow cathode mercury discharges at propellant flows and heater power levels much below those required by conventional cathode starting. Results are presented for 3.2-mm diameter enclosed and open keeper cathodes. Starting characteristics are shown to depend on keeper voltage, mercury flow rate, heater power, keeper orifice size, emissive materials, and electrode to which the pulse is applied. This starting technique has been used to start a cathode over 10,000 times without any degradation of starting capability. The starting reliability, propellant and power savings offered by the high voltage pulse start should favorably impact performance of electron bombardment thrusters in missions requiring many on-off duty cycles.

Self-Nulling Lock-in Detection Electronics for Capacitance Probe Electrometer

NASA Technical Reports Server (NTRS)

Blaes, Brent R.; Schaefer, Rembrandt T.

2012-01-01

A multi-channel electrometer voltmeter that employs self-nulling lock-in detection electronics in conjunction with a mechanical resonator with noncontact voltage sensing electrodes has been developed for space-based measurement of an Internal Electrostatic Discharge Monitor (IESDM). The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. Use of an AC-coupled lock-in amplifier with closed-loop sense-signal nulling via generation of an active guard-driving feedback voltage provides the resolution, accuracy, linearity and stability needed for long-term space-based measurement of the IESDM. This implementation relies on adjusting the feedback voltage to drive the sense current received from the resonator s variable-capacitance-probe voltage transducer to approximately zero, as limited by the signal-to-noise performance of the loop electronics. The magnitude of the sense current is proportional to the difference between the input voltage being measured and the feedback voltage, which matches the input voltage when the sense current is zero. High signal-to-noise-ratio (SNR) is achieved by synchronous detection of the sense signal using the correlated reference signal derived from the oscillator circuit that drives the mechanical resonator. The magnitude of the feedback voltage, while the loop is in a settled state with essentially zero sense current, is an accurate estimate of the input voltage being measured. This technique has many beneficial attributes including immunity to drift, high linearity, high SNR from synchronous detection of a single-frequency carrier selected to avoid potentially noisy 1/f low-frequency spectrum of the signal-chain electronics, and high accuracy provided through the benefits of a driven shield encasing the capacitance- probe transducer and guarded input triaxial lead-in. Measurements obtained from a 2- channel prototype electrometer have demonstrated good accuracy (|error| < 0.2 V) and high stability. Twenty-four-hour tests have been performed with virtually no drift. Additionally, 5,500 repeated one-second measurements of 100 V input were shown to be approximately normally distributed with a standard deviation of 140 mV.

Performance Test Results of the NASA-457M v2 Hall Thruster

NASA Technical Reports Server (NTRS)

Soulas, George C.; Haag, Thomas W.; Herman, Daniel A.; Huang, Wensheng; Kamhawi, Hani; Shastry, Rohit

2012-01-01

Performance testing of a second generation, 50 kW-class Hall thruster labeled NASA-457M v2 was conducted at the NASA Glenn Research Center. This NASA-designed thruster is an excellent candidate for a solar electric propulsion system that supports human exploration missions. Thruster discharge power was varied from 5 to 50 kW over discharge voltage and current ranges of 200 to 500 V and 15 to 100 A, respectively. Anode efficiencies varied from 0.56 to 0.71. The peak efficiency was similar to that of other state-of-the-art high power Hall thrusters, but outperformed these thrusters at lower discharge voltages. The 0.05 to 0.18 higher anode efficiencies of this thruster compared to its predecessor were primarily due to which of two stable discharge modes the thruster was operated. One stable mode was at low magnetic field strengths, which produced high anode efficiencies, and the other at high magnetic fields where its predecessor was operated. Cathode keeper voltages were always within 2.1 to 6.2 V and cathode voltages were within 13 V of tank ground during high anode efficiency operation. However, during operation at high magnetic fields, cathode-to-ground voltage magnitudes increased dramatically, exceeding 30 V, due to the high axial magnetic field strengths in the immediate vicinity of the centrally-mounted cathode. The peak thrust was 2.3 N and this occurred at a total thruster input power of 50.0 kW at a 500 V discharge voltage. The thruster demonstrated a thrust-to-power range of 76.4 mN/kW at low power to 46.1 mN/kW at full power, and a specific impulse range of 1420 to 2740 s. For a discharge voltage of 300 V, where specific impulses would be about 2000 s, thrust efficiencies varied from 0.57 to 0.63.

An Efficient Modulation Strategy for Cascaded Photovoltaic Systems Suffering From Module Mismatch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Cheng; Zhang, Kai; Xiong, Jian

Modular multilevel cascaded converter (MMCC) is a promising technique for medium/high-voltage high-power photovoltaic systems due to its modularity, scalability, and capability of distributed maximum power point tracking (MPPT) etc. However, distributed MPPT under module-mismatch might polarize the distribution of ac output voltages as well as the dc-link voltages among the modules, distort grid currents, and even cause system instability. For the better acceptance in practical applications, such issues need to be well addressed. Based on mismatch degree that is defined to consider both active power distribution and maximum modulation index, this paper presents an efficient modulation strategy for a cascaded-H-bridge-basedmore » MMCC under module mismatch. It can operate in loss-reducing mode or range-extending mode. By properly switching between the two modes, performance indices such as system efficiency, grid current quality, and balance of dc voltages, can be well coordinated. In this way, the MMCC system can maintain high-performance over a wide range of operating conditions. As a result, effectiveness of the proposed modulation strategy is proved with experiments.« less

An Efficient Modulation Strategy for Cascaded Photovoltaic Systems Suffering From Module Mismatch

DOE PAGES

Wang, Cheng; Zhang, Kai; Xiong, Jian; ...

2017-09-26

Modular multilevel cascaded converter (MMCC) is a promising technique for medium/high-voltage high-power photovoltaic systems due to its modularity, scalability, and capability of distributed maximum power point tracking (MPPT) etc. However, distributed MPPT under module-mismatch might polarize the distribution of ac output voltages as well as the dc-link voltages among the modules, distort grid currents, and even cause system instability. For the better acceptance in practical applications, such issues need to be well addressed. Based on mismatch degree that is defined to consider both active power distribution and maximum modulation index, this paper presents an efficient modulation strategy for a cascaded-H-bridge-basedmore » MMCC under module mismatch. It can operate in loss-reducing mode or range-extending mode. By properly switching between the two modes, performance indices such as system efficiency, grid current quality, and balance of dc voltages, can be well coordinated. In this way, the MMCC system can maintain high-performance over a wide range of operating conditions. As a result, effectiveness of the proposed modulation strategy is proved with experiments.« less

Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator

NASA Astrophysics Data System (ADS)

Ding, Xingwei; Zhang, Hao; Ding, He; Zhang, Jianhua; Huang, Chuanxin; Shi, Weimin; Li, Jun; Jiang, Xueyin; Zhang, Zhilin

2014-12-01

We successfully integrated the high-performance oxide thin film transistors with novel IZO/IGZO dual-active-layers. The results showed that dual-active-layer (IZO/IGZO) TFTs, compared with single active layer IGZO TFTs and IZO TFTs, exhibited the excellent performances; specifically, a high field effect mobility of 14.4 cm2/Vs, a suitable threshold voltage of 0.8 V, a high on/off ratio of more than 107, a steep sub-threshold swing of 0.13 V/dec, and a substantially small threshold voltage shift of 0.51 V after temperature stress from 293 K to 353 K. In order to understand the superior performance, the density-of-states (DOS) were investigated based on the temperature-dependent transfer curves. The superior electric properties were attributed to the smaller DOS and higher carrier concentration. The proposed IZO/IGZO-TFT in this paper can be used as driving devices in the next-generation flat panel displays.

High-performance, low-operating voltage, and solution-processable organic field-effect transistor with silk fibroin as the gate dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Leilei; Xu, Xinjun, E-mail: xuxj@mater.ustb.edu.cn, E-mail: lidong@mater.ustb.edu.cn; Ma, Mingchao

2014-01-13

We report the use of silk fibroin as the gate dielectric material in solution-processed organic field-effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the semiconducting layer. Such OFETs exhibit a low threshold of −0.77 V and a low-operating voltage (0 to −3 V) compatible with the voltage level commonly-used in current electronic industry. The carrier mobility of such OFETs is as high as 0.21 cm{sup 2} V{sup −1} s{sup −1} in the saturation regime, comparable to the best value of P3HT-based OFETs with dielectric layer that is not solution-processed. The high-performance of this kind of OFET is related with the high contentmore » of β strands in fibroin dielectric which leads to an array of fibers in a highly ordered structure, thus reducing the trapping sites at the semiconductor/dielectric interface.« less

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System.

PubMed

Shen, Chih-Lung; Liou, Heng

2017-11-15

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%.

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System

PubMed Central

Shen, Chih-Lung; Liou, Heng

2017-01-01

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%. PMID:29140282

Hybrid-PIC Modeling of a High-Voltage, High-Specific-Impulse Hall Thruster

NASA Technical Reports Server (NTRS)

Smith, Brandon D.; Boyd, Iain D.; Kamhawi, Hani; Huang, Wensheng

2013-01-01

The primary life-limiting mechanism of Hall thrusters is the sputter erosion of the discharge channel walls by high-energy propellant ions. Because of the difficulty involved in characterizing this erosion experimentally, many past efforts have focused on numerical modeling to predict erosion rates and thruster lifespan, but those analyses were limited to Hall thrusters operating in the 200-400V discharge voltage range. Thrusters operating at higher discharge voltages (V(sub d) >= 500 V) present an erosion environment that may differ greatly from that of the lower-voltage thrusters modeled in the past. In this work, HPHall, a well-established hybrid-PIC code, is used to simulate NASA's High-Voltage Hall Accelerator (HiVHAc) at discharge voltages of 300, 400, and 500V as a first step towards modeling the discharge channel erosion. It is found that the model accurately predicts the thruster performance at all operating conditions to within 6%. The model predicts a normalized plasma potential profile that is consistent between all three operating points, with the acceleration zone appearing in the same approximate location. The expected trend of increasing electron temperature with increasing discharge voltage is observed. An analysis of the discharge current oscillations shows that the model predicts oscillations that are much greater in amplitude than those measured experimentally at all operating points, suggesting that the differences in oscillation amplitude are not strongly associated with discharge voltage.

Positive temperature coefficient thermistors based on carbon nanotube/polymer composites

PubMed Central

Zeng, You; Lu, Guixia; Wang, Han; Du, Jinhong; Ying, Zhe; Liu, Chang

2014-01-01

In order to explore availability of carbon nanotube (CNT)-based positive temperature coefficient (PTC) thermistors in practical application, we prepared carbon nanotube (CNT) filled high density polyethylene (HDPE) composites by using conventional melt-mixing methods, and investigated their PTC effects in details. The CNT-based thermistors exhibit much larger hold current and higher hold voltage, increasing by 129% in comparison with the commercial carbon black (CB) filled HDPE thermistors. Such high current-bearing and voltage-bearing capacity for the CNT/HDPE thermistors is mainly attributed to high thermal conductivity and heat dissipation of entangled CNT networks. Moreover, the CNT/HDPE thermistors exhibit rapid electrical response to applied voltages, comparable to commercial CB-based thermistors. In light of their high current-bearing capacity and quick response, the CNT-based thermistors have great potential to be used as high-performance thermistors in practical application, especially in some critical circumstances of high temperature, large applied currents, and high applied voltages. PMID:25327951

Highly improved voltage efficiency of seawater battery by use of chloride ion capturing electrode

NASA Astrophysics Data System (ADS)

Kim, Kyoungho; Hwang, Soo Min; Park, Jeong-Sun; Han, Jinhyup; Kim, Junsoo; Kim, Youngsik

2016-05-01

Cost-effective and eco-friendly battery system with high energy density is highly desirable. Herein, we report a seawater battery with a high voltage efficiency, in which a chloride ion-capturing electrode (CICE) consisting of Ag foil is utilized as the cathode. The use of Ag as the cathode leads to a sharp decrease in the voltage gaps between charge and discharge curves, based on reversible redox reaction of Ag/AgCl (at ∼2.9 V vs. Na+/Na) in a seawater catholyte during cycling. The Ag/AgCl reaction proves to be highly reversible during battery cycling. The battery employing the Ag electrode shows excellent cycling performance with a high Coulombic efficiency (98.6-98.7%) and a highly improved voltage efficiency (90.3% compared to 73% for carbonaceous cathode) during 20 cycles (total 500 h). These findings demonstrate that seawater batteries using a CICE could be used as next-generation batteries for large-scale stationary energy storage plants.

Hybrid vehicle control

DOEpatents

Shallvari, Iva; Velnati, Sashidhar; DeGroot, Kenneth P.

2015-07-28

A method and apparatus for heating a catalytic converter's catalyst to an efficient operating temperature in a hybrid electric vehicle when the vehicle is in a charge limited mode such as e.g., the charge depleting mode or when the vehicle's high voltage battery is otherwise charge limited. The method and apparatus determine whether a high voltage battery of the vehicle is incapable of accepting a first amount of charge associated with a first procedure to warm-up the catalyst. If it is determined that the high voltage battery is incapable of accepting the first amount of charge, a second procedure with an acceptable amount of charge is performed to warm-up the catalyst.

Investigation of Voltage-Activated BAW Devices and Filters

DTIC Science & Technology

2016-09-04

strontium titanate (STO) and barium-strontium titanate (BST), with the ultimate objective of creating high- performance, reconfigurable filters and...Distribution Unlimited UU UU UU UU 04-09-2016 1-Sep-2010 31-Aug-2014 Final Report: Investigation of Voltage-Activated BAW Devices and Filters The views...2016 Investigation of Voltage-Activated BAW Devices and Filters Final Report Award Information: Contract Number: W911NF1010286 Period of Work

Investigation of voltage source design's for Electrical Impedance Mammography (EIM) Systems.

PubMed

Qureshi, Tabassum R; Chatwin, Chris R; Zhou, Zhou; Li, Nan; Wang, W

2012-01-01

According to Jossient, interesting characteristics of breast tissues mostly lie above 1MHz; therefore a wideband excitation source covering higher frequencies (i.e. above 1MHz) is required. The main objective of this research is to establish a feasible bandwidth envelope that can be used to design a constant EIM voltage source over a wide bandwidth with low output impedance for practical implementation. An excitation source is one of the major components in bio-impedance measurement systems. In any bio-impedance measurement system the excitation source can be achieved either by injecting current and measuring the resulting voltages, or by applying voltages and measuring the current developed. This paper describes three voltage source architectures and based on their bandwidth comparison; a differential voltage controlled voltage source (VCVS) is proposed, which can be used over a wide bandwidth (>15MHz). This paper describes the performance of the designed EIM voltage source for different load conditions and load capacitances reporting signal-to-noise ratio of approx 90dB at 10MHz frequency, signal phase and maximum of 4.75kΩ source output impedance at 10MHz. Optimum data obtained using Pspice® is used to demonstrate the high-bandwidth performance of the source.

High-performance, low-voltage electroosmotic pumps with molecularly thin silicon nanomembranes

PubMed Central

Snyder, Jessica L.; Getpreecharsawas, Jirachai; Fang, David Z.; Gaborski, Thomas R.; Striemer, Christopher C.; Fauchet, Philippe M.; Borkholder, David A.; McGrath, James L.

2013-01-01

We have developed electroosmotic pumps (EOPs) fabricated from 15-nm-thick porous nanocrystalline silicon (pnc-Si) membranes. Ultrathin pnc-Si membranes enable high electroosmotic flow per unit voltage. We demonstrate that electroosmosis theory compares well with the observed pnc-Si flow rates. We attribute the high flow rates to high electrical fields present across the 15-nm span of the membrane. Surface modifications, such as plasma oxidation or silanization, can influence the electroosmotic flow rates through pnc-Si membranes by alteration of the zeta potential of the material. A prototype EOP that uses pnc-Si membranes and Ag/AgCl electrodes was shown to pump microliter per minute-range flow through a 0.5-mm-diameter capillary tubing with as low as 250 mV of applied voltage. This silicon-based platform enables straightforward integration of low-voltage, on-chip EOPs into portable microfluidic devices with low back pressures. PMID:24167263

Advanced Lithium-ion Batteries with High Specific Energy and Improved Safety for Nasa's Missions

NASA Technical Reports Server (NTRS)

West, William; Smart, Marshall; Soler, Jess; Krause, Charlie; Hwang, Constanza; Bugga, Ratnakumar

2012-01-01

High Energy Materials ( Cathodes, anodes and high voltage and safe electrolyte are required to meet the needs of the future space missions. A. Cathodes: The layered layered composites of of Li2MnO3 and LiMO2 are promising Power capability of the materials, however requires further improvement. Suitable morphology is critical for good performance and high tap (packing) density. Surface coatings help in the interfacial kinetics and stability. B. Electrolytes: Small additions of Flame Retardant Additives improves flammability without affecting performance (Rate and cycle life). 1.0 M in EC+EMC+TPP was shown to have good performance against the high voltage cathode; Performance demonstrated in large capacity prototype MCMB- LiNiCoO2 Cells. Formulations with higher proportions are looking promising. Still requires further validation through abuse tests (e.g., on 18650 cells).

A high-precision voltage source for EIT

PubMed Central

Saulnier, Gary J; Liu, Ning; Ross, Alexander S

2006-01-01

Electrical impedance tomography (EIT) utilizes electrodes placed on the surface of a body to determine the complex conductivity distribution within the body. EIT can be performed by applying currents through the electrodes and measuring the electrode voltages or by applying electrode voltages and measuring the currents. Techniques have also been developed for applying the desired currents using voltage sources. This paper describes a voltage source for use in applied-voltage EIT that includes the capability of measuring both the applied voltage and applied current. A calibration circuit and calibration algorithm are described which enables all voltage sources in an EIT system to be calibrated to a common standard. The calibration minimizes the impact of stray shunt impedance, passive component variability and active component non-ideality. Simulation data obtained using PSpice are used to demonstrate the effectiveness of the circuits and calibration algorithm. PMID:16636413

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

NASA Astrophysics Data System (ADS)

Tewari, Amit; Gandla, Srinivas; Pininti, Anil Reddy; Karuppasamy, K.; Böhm, Siva; Bhattacharyya, Arup R.; McNeill, Christopher R.; Gupta, Dipti

2015-09-01

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of -1.4 V (operating voltage: 0 to -4 V) together with a mobility of 1.9 cm2 V-1s-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ ˜ 20.02), a low interfacial trap density (2.56 × 1011cm-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm.

Enhanced High Performance Power Compensation Methodology by IPFC Using PIGBT-IDVR

PubMed Central

Arumugom, Subramanian; Rajaram, Marimuthu

2015-01-01

Currently, power systems are involuntarily controlled without high speed control and are frequently initiated, therefore resulting in a slow process when compared with static electronic devices. Among various power interruptions in power supply systems, voltage dips play a central role in causing disruption. The dynamic voltage restorer (DVR) is a process based on voltage control that compensates for line transients in the distributed system. To overcome these issues and to achieve a higher speed, a new methodology called the Parallel IGBT-Based Interline Dynamic Voltage Restorer (PIGBT-IDVR) method has been proposed, which mainly spotlights the dynamic processing of energy reloads in common dc-linked energy storage with less adaptive transition. The interline power flow controller (IPFC) scheme has been employed to manage the power transmission between the lines and the restorer method for controlling the reactive power in the individual lines. By employing the proposed methodology, the failure of a distributed system has been avoided and provides better performance than the existing methodologies. PMID:26613101

A High-Voltage Bipolar Transconductance Amplifier for Electrotactile Stimulation

PubMed Central

Schaning, Matthew A.; Kaczmarek, Kurt A.

2008-01-01

This article describes a high-performance transconductance amplifier specifically designed for electrotactile (electrocutaneous) stimulation. It enables voltages up to ±600 V to be produced at the output which will allow the psychophysiological performance associated with stimulation of the fingertip using various stimulation waveforms to be studied more thoroughly. The design has a transconductance of up to 20 mA/V, an 8.8-MΩ output resistance, and can provide output currents up to ±20 mA. A complete schematic diagram is presented along with a discussion of theory of operation and safety issues as well as performance and derating plots from the implemented design. PMID:18838369

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

Improved Control of Charging Voltage for Li-Ion Battery

NASA Technical Reports Server (NTRS)

Timmerman, Paul; Bugga, Ratnakumar

2006-01-01

The protocol for charging a lithium-ion battery would be modified, according to a proposal, to compensate for the internal voltage drop (charging current internal resistance of the battery). The essence of the modification is to provide for measurement of the internal voltage drop and to increase the terminal-voltage setting by the amount of the internal voltage drop. Ordinarily, a lithium-ion battery is charged at constant current until its terminal voltage attains a set value equal to the nominal full-charge potential. The set value is chosen carefully so as not to exceed the lithium-plating potential, because plated lithium in metallic form constitutes a hazard. When the battery is charged at low temperature, the internal voltage drop is considerable because the electrical conductivity of the battery electrolyte is low at low temperature. Charging the battery at high current at any temperature also gives rise to a high internal voltage drop. In some cases, the internal voltage drop can be as high as 1 volt per cell. Because the voltage available for charging is less than the terminal voltage by the amount of the internal voltage drop, the battery is not fully charged (see figure), even when the terminal voltage reaches the set value. In the modified protocol, the charging current would be periodically interrupted so that the zero-current battery-terminal voltage indicative of the state of charge could be measured. The terminal voltage would also be measured at full charging current. The difference between the full-current and zero-current voltages would equal the internal voltage drop. The set value of terminal voltage would then be increased beyond the nominal full-charge potential by the amount of the internal voltage drop. This adjustment would be performed repeatedly, in real time, so that the voltage setting would track variations in the internal voltage drop to afford full charge without risk of lithium plating. If the charging current and voltage settings were controlled by a computer, then this method of charge control could readily be implemented in software.

A magnesium–sodium hybrid battery with high operating voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Hui; Li, Yifei; Liang, Yanliang

2016-06-10

We report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mAh g -1. We also demonstrate the cell with an energy density of 135 Wh kg -1 and a high power density of up to 1.67 kW kg -1.

Cryogenic lifetime tests on a commercial epoxy resin high voltage bushing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwenterly, S W; Pleva, Ed; Ha, Tam T

2012-06-12

High-temperature superconducting (HTS) power devices operating in liquid nitrogen frequently require high-voltage bushings to carry the current leads from the superconducting windings to the room temperature grid connections. Oak Ridge National Laboratory is collaborating with Waukesha Electric Systems, SuperPower, and Southern California Edison to develop and demonstrate an HTS utility power transformer. Previous dielectric high voltage tests in support of this program have been carried out in test cryostats with commercial epoxy resin bushings from Electro Composites Inc. (ECI). Though the bushings performed well in these short-term tests, their long-term operation at high voltage in liquid nitrogen needs to bemore » verified for use on the utility grid. Long-term tests are being carried out on a sample 28-kV-class ECI bushing. The bushing has a monolithic cast, cycloaliphatic resin body and is fire- and shatter-resistant. The test cryostat is located in an interlocked cage and is energized at 25 kVac around the clock. Liquid nitrogen (LN) is automatically refilled every 9.5 hours. Partial discharge, capacitance, and leakage resistance tests are periodically performed to check for deviations from factory values. At present, over 2400 hours have been accumulated with no changes in these parameters. The tests are scheduled to run for four to six months.« less

Cryogenic lifetime tests on a commercial epoxy resin high voltage bushing

NASA Astrophysics Data System (ADS)

Schwenterly, S. W.; Pleva, E. F.; Ha, T. T.

2012-06-01

High-temperature superconducting (HTS) power devices operating in liquid nitrogen frequently require high-voltage bushings to carry the current leads from the superconducting windings to the room temperature grid connections. Oak Ridge National Laboratory (ORNL) is collaborating with Waukesha Electric Systems (WES), SuperPower (SP), and Southern California Edison (SCE) to develop and demonstrate an HTS utility power transformer. Previous dielectric high voltage tests in support of this program have been carried out in test cryostats with commercial epoxy resin bushings from Electro Composites Inc. (ECI). Though the bushings performed well in these short-term tests, their long-term operation at high voltage in liquid nitrogen (LN) needs to be verified for use on the utility grid. Long-term tests are being carried out on a sample 28-kV-rms-class ECI bushing. The bushing has a monolithic cast, cycloaliphatic resin body and is fire- and shatter-resistant. The test cryostat is located in an interlocked cage and is continuously energized at 25 kVac rms. LN is automatically refilled every 9.5 hours. Partial discharge, capacitance, and leakage resistance tests are periodically performed to check for deviations from factory values. At present, over 2400 hours have been accumulated with no changes in these parameters. The tests are scheduled to run for four to six months.

Voltage-induced reduction of graphene oxide

NASA Astrophysics Data System (ADS)

Faucett, Austin C.

Graphene Oxide (GO) is being widely researched as a precursor for the mass production of graphene, and as a versatile material in its own right for flexible electronics, chemical sensors, and energy harvesting applications. Reduction of GO, an electrically insulating material, into reduced graphene oxide (rGO) restores electrical conductivity via removal of oxygen-containing functional groups. Here, a reduction method using an applied electrical bias, known as voltage-induced reduction, is explored. Voltage-induced reduction can be performed under ambient conditions and avoids the use of hazardous chemicals or high temperatures common with standard methods, but little is known about the reduction mechanisms and the quality of rGO produced with this method. This work performs extensive structural and electrical characterization of voltage-reduced GO (V-rGO) and shows that it is competitive with standard methods. Beyond its potential use as a facile and eco-friendly processing approach, V-rGO reduction also offers record high-resolution patterning capabilities. In this work, the spatial resolution limits of voltage-induced reduction, performed using a conductive atomic force microscope probe, are explored. It is shown that arbitrary V-rGO conductive features can be patterned into insulating GO with nanoscale resolution. The localization of voltage-induced reduction to length scales < 10 nm allows studies of reduction reaction kinetics, using electrical current obtained in-situ, with statistical robustness. Methods for patterning V-rGO nanoribbons are then developed. After presenting sub-10nm patterning of V-rGO nanoribbons in GO single sheets and films, the performance of V-rGO nanoribbon field effect transistors (FETs) are demonstrated. Preliminary measurements show an increase in electrical current on/off ratios as compared to large-area rGO FETs, indicating transport gap modulation that is possibly due to quantum confinement effects.

Simulation Test System of Non-Contact D-dot Voltage Transformer

NASA Astrophysics Data System (ADS)

Yang, Jie; Wang, Jingang; Luo, Ruixi; Gao, Can; Songnong, Li; Kongjun, Zhou

2016-04-01

The development trend of future voltage transformer in smart grid is non-contact measurement, miniaturization and intellectualization. This paper proposes one simulation test system of non-contact D-dot transformer for voltage measurement. This simulation test system consists of D-dot transformer, signal processing circuit and ground PC port. D-dot transformer realizes the indirect voltage measurement by measuring the change rate of electric displacement vector, a non-contact means (He et al. 2004, Principles and experiments of voltage transformer based on self-integrating D-dot probe. Proc CSEE 2014;15:2445-51). Specific to the characteristics of D-dot transformer signals, signal processing circuits with strong resistance to interference and distortion-free amplified sensor output signal are designed. WIFI wireless network is used to transmit the voltage detection to LabVIEW-based ground collection port and LabVIEW technology is adopted for signal reception, data processing and analysis and other functions. Finally, a test platform is established to simulate the performance of the whole test system of single-phase voltage transformer. Test results indicate that this voltage transformer has sound real-time performance, high accuracy and fast response speed and the simulation test system is stable and reliable and can be a new prototype of voltage transformers.

Broadband linear high-voltage amplifier for radio frequency ion traps.

PubMed

Kuhlicke, Alexander; Palis, Klaus; Benson, Oliver

2014-11-01

We developed a linear high-voltage amplifier for small capacitive loads consisting of a high-voltage power supply and a transistor amplifier. With this cost-effective circuit including only standard parts sinusoidal signals with a few volts can be amplified to 1.7 kVpp over a usable frequency range at large-signal response spanning four orders of magnitude from 20 Hz to 100 kHz under a load of 10 pF. For smaller output voltages the maximum frequency shifts up to megahertz. We test different capacitive loads to probe the influence on the performance. The presented amplifier is sustained short-circuit proof on the output side, which is a significant advantage over other amplifier concepts. The amplifier can be used to drive radio frequency ion traps for single charged nano- and microparticles, which will be presented in brief.

A grid-connected single-phase photovoltaic micro inverter

NASA Astrophysics Data System (ADS)

Wen, X. Y.; Lin, P. J.; Chen, Z. C.; Wu, L. J.; Cheng, S. Y.

2017-11-01

In this paper, the topology of a single-phase grid-connected photovoltaic (PV) micro-inverter is proposed. The PV micro-inverter consists of DC-DC stage with high voltage gain boost and DC-AC conversion stage. In the first stage, we apply the active clamp circuit and two voltage multipliers to achieve soft switching technology and high voltage gain. In addition, the flower pollination algorithm (FPA) is employed for the maximum power point tracking (MPPT) in the PV module in this stage. The second stage cascades a H-bridge inverter and LCL filter. To feed high quality sinusoidal power into the grid, the software phase lock, outer voltage loop and inner current loop control method are adopted as the control strategy. The performance of the proposed topology is tested by Matlab/Simulink. A PV module with maximum power 300W and maximum power point voltage 40V is applied as the input source. The simulation results indicate that the proposed topology and the control strategy are feasible.

Monitoring the metering performance of an electronic voltage transformer on-line based on cyber-physics correlation analysis

NASA Astrophysics Data System (ADS)

Zhang, Zhu; Li, Hongbin; Tang, Dengping; Hu, Chen; Jiao, Yang

2017-10-01

Metering performance is the key parameter of an electronic voltage transformer (EVT), and it requires high accuracy. The conventional off-line calibration method using a standard voltage transformer is not suitable for the key equipment in a smart substation, which needs on-line monitoring. In this article, we propose a method for monitoring the metering performance of an EVT on-line based on cyber-physics correlation analysis. By the electrical and physical properties of a substation running in three-phase symmetry, the principal component analysis method is used to separate the metering deviation caused by the primary fluctuation and the EVT anomaly. The characteristic statistics of the measured data during operation are extracted, and the metering performance of the EVT is evaluated by analyzing the change in statistics. The experimental results show that the method successfully monitors the metering deviation of a Class 0.2 EVT accurately. The method demonstrates the accurate evaluation of on-line monitoring of the metering performance on an EVT without a standard voltage transformer.

Compact high voltage, high peak power, high frequency transformer for converter type modulator applications.

PubMed

Reghu, T; Mandloi, V; Shrivastava, Purushottam

2016-04-01

The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

Dynamic Performance of a Back-to-Back HVDC Station Based on Voltage Source Converters

NASA Astrophysics Data System (ADS)

Khatir, Mohamed; Zidi, Sid-Ahmed; Hadjeri, Samir; Fellah, Mohammed-Karim

2010-01-01

The recent developments in semiconductors and control equipment have made the voltage source converter based high voltage direct current (VSC-HVDC) feasible. This new DC transmission is known as "HVDC Light or "HVDC Plus by leading vendors. Due to the use of VSC technology and pulse width modulation (PWM) the VSC-HVDC has a number of potential advantages as compared with classic HVDC. In this paper, the scenario of back-to-back VSC-HVDC link connecting two adjacent asynchronous AC networks is studied. Control strategy is implemented and its dynamic performances during disturbances are investigated in MATLAB/Simulink program. The simulation results have shown good performance of the proposed system under balanced and unbalanced fault conditions.

Performance improvement of organic thin film transistors by using active layer with sandwich structure

NASA Astrophysics Data System (ADS)

Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

2017-08-01

We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Series resonant converter with auxiliary winding turns: analysis, design and implementation

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-05-01

Conventional series resonant converters have researched and applied for high-efficiency power units due to the benefit of its low switching losses. The main problems of series resonant converters are wide frequency variation and high circulating current. Thus, resonant converter is limited at narrow input voltage range and large input capacitor is normally adopted in commercial power units to provide the minimum hold-up time requirement when AC power is off. To overcome these problems, the resonant converter with auxiliary secondary windings are presented in this paper to achieve high voltage gain at low input voltage case such as hold-up time duration when utility power is off. Since the high voltage gain is used at low input voltage cased, the frequency variation of the proposed converter compared to the conventional resonant converter is reduced. Compared to conventional resonant converter, the hold-up time in the proposed converter is more than 40ms. The larger magnetising inductance of transformer is used to reduce the circulating current losses. Finally, a laboratory prototype is constructed and experiments are provided to verify the converter performance.

Stability of Li- and Mn-Rich Layered-Oxide Cathodes within the First-Charge Voltage Plateau

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iddir, Hakim; Bareño, Javier; Benedek, Roy

Li and Mn rich layered oxides xLi 2MnO 3•(1-x)LiMO 2 enable high capacity and energy density Li-ion batteries, but undergo structural transformations during the first charge that degrade their performance, and result in Voltage Fade upon cycling. First-principles density-functional-theory simulations reveal atomic transformations that occur in the bulk during the first charge. The simulations and experiment (particularly XRD) show that the O and Mn sublattices remain intact during the early part of the voltage plateau, and significant transformations occur only well into the voltage plateau, with perhaps close to half of the Li in the Li 2MnO 3 domains removed.more » That Voltage Fade is actually observed experimentally for a first charge with only minimal activation (extending only slightly beyond the onset of the voltage plateau) may be a consequence of surface and interface instabilities. Implications for the achievement of high energy-density, low-fade battery operation are discussed.« less

The investigation of a compact auto-connected wire-wrapped pulsed transformer

NASA Astrophysics Data System (ADS)

Wang, Yuwei; Zhang, Jiande; Chen, Dongqun; Cao, Shengguang; Li, Da; Zhang, Tianyang

2012-05-01

For the power conditioning circuit used to deliver power efficiently from flux compression generator (FCG) to the load with high impedance, an air-cored and wire-wrapped transformer convenient in coaxial connection to the other parts is investigated. To reduce the size and enhance the performance, an auto-connection is adopted. A fast and simple model is used to calculate the electrical parameters of the transformer. To evaluate the high voltage capability, the voltages across turns and the electric field distribution in the transformer are investigated. The calculated and the measured electrical parameters of the transformer show good agreements. And the safe operating voltage is predicted to exceed 500 kV. In the preliminary experiments, the transformer is tested in a power conditioning circuit with a capacitive power supply. It is demonstrated that the output voltage of the transformer reaches -342 kV under the input voltage of -81 kV.

The investigation of a compact auto-connected wire-wrapped pulsed transformer.

PubMed

Wang, Yuwei; Zhang, Jiande; Chen, Dongqun; Cao, Shengguang; Li, Da; Zhang, Tianyang

2012-05-01

For the power conditioning circuit used to deliver power efficiently from flux compression generator (FCG) to the load with high impedance, an air-cored and wire-wrapped transformer convenient in coaxial connection to the other parts is investigated. To reduce the size and enhance the performance, an auto-connection is adopted. A fast and simple model is used to calculate the electrical parameters of the transformer. To evaluate the high voltage capability, the voltages across turns and the electric field distribution in the transformer are investigated. The calculated and the measured electrical parameters of the transformer show good agreements. And the safe operating voltage is predicted to exceed 500 kV. In the preliminary experiments, the transformer is tested in a power conditioning circuit with a capacitive power supply. It is demonstrated that the output voltage of the transformer reaches -342 kV under the input voltage of -81 kV.

Component technology for space power systems

NASA Technical Reports Server (NTRS)

Finke, R. C.

1982-01-01

Progress made by NASA toward implementation of equipment for the conversion, management, and distribution of voltage power in space applications are reviewed. Work has been carried forward on components such as bipolar transistors, deep impurity semiconductors, conductors, dielectrics, magnetic devices, and rotary power transfer. Specific programs for the high voltage systems have included research on lightweight, low-cost conductors featuring graphite fibers containing electron donor materials for wires and cables with reduced mass and the conductivity of copper. Attention has also been given p-n junction technology for high-speed, high-current, high-voltage materials and diamond-like dielectric films which are hard, have high dielectric strength, and can operate up to 300 C. A transistor has been fabricated with a voltage of 1200 V at 100 A, with a gain of 10 and a 0.5 microsec rise/fall time. A 25 kW transformer has also been built which performs at 20 kHz with an efficiency of 99.2%.

Ultrastable Natural Ester-Based Nanofluids for High Voltage Insulation Applications.

PubMed

Peppas, Georgios D; Bakandritsos, Aristides; Charalampakos, Vasilis P; Pyrgioti, Eleftheria C; Tucek, Jiri; Zboril, Radek; Gonos, Ioannis F

2016-09-28

Nanofluids for high voltage insulation systems have emerged as a potential substitute for liquid dielectrics in industrial applications. Nevertheless, the sedimentation of nanoparticles has been so far a serious barrier for their wide and effective exploitation. The present work reports on the development and in-depth characterization of colloidally ultrastable natural ester oil insulation systems containing iron oxide nanocrystals which lift the problem of sedimentation and phase separation. Compared to state-of-the-art systems, the final product is endowed with increased dielectric strength, faster thermal response, lower dielectric losses (decreased dissipation factor: tan δ), and very high endurance during discharge stressing. The developed nanofluid was studied and compared with a similar system containing commercial iron oxide nanoparticles, the latter demonstrating extensive sedimentation. Herein, the dielectric properties of the nanofluids are analyzed at various concentrations by means of breakdown voltage and dissipation factor measurements. The characterization techniques unequivocally demonstrate the high performance reliability of the reported nanofluid, which constitutes a significant breakthrough in the field of high voltage insulation technologies.

Electron gun jitter effects on beam bunching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, M. S.; Iqbal, M., E-mail: muniqbal.chep@pu.edu.pk; Centre for High Energy Physics, University of the Punjab, Lahore 45590

For routine operation of Beijing Electron Positron Collider II (BEPCII) linac, many factors may affect the beam bunching process directly or indirectly. We present the measurements and analyses of the gun timing jitter, gun high voltage jitter, and beam energy at the exit of the standard acceleration section of the linac quantitatively. Almost 80 mV and more than 200 ps of gun high voltage and time jitters have ever been measured, respectively. It was analyzed that the gun timing jitter produced severe effects on beam energy than the gun high voltage jitter, if the timing jitter exceeded 100 ps whichmore » eventually deteriorates both the beam performance and the injection rate to the storage ring.« less

A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

PubMed Central

Zhang, Tongzhi; Pang, Fufei; Liu, Huanhuan; Cheng, Jiajing; Lv, Longbao; Zhang, Xiaobei; Chen, Na; Wang, Tingyun

2016-01-01

We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD) of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad/(m⋅Pa). A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work. PMID:27916900

High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Pedos, M. S.; Scherbinin, S. V.; Mamontov, Y. I.; Ponomarev, S. V.

2015-11-01

In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium redox flow cells

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.

1977-01-01

Performance of the iron-titanium redox flow cell was studied as a function of acid concentration. Anion permeable membranes separated the compartments. Electrodes were graphite cloth. Current densities ranged up to 25 mA/square centimeter. Open-circuit and load voltages decreased as the acidity was increased on the iron side as predicted. On the titanium side, open-circuit voltages decreased as the acidity was increased in agreement with theory, but load voltages increased due to decreased polarization with increasing acidity. High acidity on the titanium side coupled with low acidity on the iron side gives the best load voltage, but such cells show voltage losses as they are repeatedly cycled. Analyses show that the bulk of the voltage losses are due to diffusion of acid through the membrane.

Alkaline anion exchange membrane water electrolysis: Effects of electrolyte feed method and electrode binder content

NASA Astrophysics Data System (ADS)

Cho, Min Kyung; Park, Hee-Young; Lee, Hye Jin; Kim, Hyoung-Juhn; Lim, Ahyoun; Henkensmeier, Dirk; Yoo, Sung Jong; Kim, Jin Young; Lee, So Young; Park, Hyun S.; Jang, Jong Hyun

2018-04-01

Herein, we investigate the effects of catholyte feed method and anode binder content on the characteristics of anion exchange membrane water electrolysis (AEMWE) to construct a high-performance electrolyzer, revealing that the initial AEMWE performance is significantly improved by pre-feeding 0.5 M aqueous KOH to the cathode. The highest long-term activity during repeated voltage cycling is observed for AEMWE operation in the dry cathode mode, for which the best long-term performance among membrane electrode assemblies (MEAs) featuring polytetrafluoroethylene (PTFE) binder-impregnated (5-20 wt%) anodes is detected for a PTFE content of 20 wt%. MEAs with low PTFE content (5 and 9 wt%) demonstrate high initial performance, rapid performance decay, and significant catalyst loss from the electrode during long-term operation, whereas the MEA with 20 wt% PTFE allows stable water electrolysis for over 1600 voltage cycles. Optimization of cell operating conditions (i.e., operation in dry cathode mode at an optimum anode binder content following an initial solution feed) achieves an enhanced water splitting current density (1.07 A cm-2 at 1.8 V) and stable long-term AEMWE performance (0.01% current density reduction per voltage cycle).

Transient Performance Improvement Circuit (TPIC)s for DC-DC converter applications

NASA Astrophysics Data System (ADS)

Lim, Sungkeun

Gordon Moore famously predicted the exponential increase in transistor integration and computing power that has been witnessed in recent decades [1]. In the near future, it is expected that more than one billion transistors will be integrated per chip, and advanced microprocessors will require clock speeds in excess of several GHz. The increasing number of transistors and high clock speeds will necessitate the consumption of more power. By 2014, it is expected that the maximum power consumption of the microprocessor will reach approximately 150W, and the maximum load current will be around 150A. Today's trend in power and thermal management is to reduce supply voltage as low as possible to reduce delivered power. It is anticipated that the Intel cores will operate on 0.8V of supply voltage by 2014 [2]. A significant challenge in Voltage Regulator Module (VRM) development for next generation microprocessors is to regulate the supply voltage within a certain tolerance band during high slew rate load transitions, since the required supply voltage tolerance band will be much narrower than the current requirement. If VR output impedance is maintained at a constant value from DC to high frequency, large output voltage spikes can be avoided during load cur- rent transients. Based on this, the Adaptive Voltage Position (AVP) concept was developed to achieve constant VR output impedance to improve transient response performance [3]. However, the VR output impedance can not be made constant over the entire frequency range with AVP design, because the AVP design makes the VR output impedance constant only at low frequencies. To make the output impedance constant at high frequencies, many bulk capacitors and ceramic capacitors are required. The tight supply voltage tolerance for the next generation of microprocessors during high slew rate load transitions requires fast transient response power supplies. A VRM can not follow the high slew rate load current transients, because of the slow inductor current slew rate which is determined by the input voltage, output voltage, and the inductance. The remaining inductor current in the power delivery path will charge the output capacitors and develop a voltage across the ESR. As a result, large output voltage spikes occur during load current transients. Due to their limited control bandwidth, traditional VRs can not sufficiently respond rapidly to certain load transients. As a result, a large output voltage spike can occur during load transients, hence requiring a large amount of bulk capacitance to decouple the VR from the load [2]. If the remaining inductor current is removed from the power stage or the inductor current slew rate is changed, the output voltage spikes can be clamped, allowing the output capacitance to be reduced. A new design methodology for a Transient Performance Improvement Circuit(TPIC) based on controlling the output impedance of a regulator is presented. The TPIC works in parallel with a voltage regulator (VR)'s ceramic capacitors to achieve faster voltage regulation without the need for a large bulk capacitance, and can serve as a replacement for bulk capacitors. The specific function of the TPIC is to mimic the behavior of the bulk capacitance in a traditional VRM by sinking and sourcing large currents during transients, allowing the VR to respond quickly to current transients without the need for a large bulk capacitance. This will allow fast transient response without the need for a large bulk capacitor. The main challenge in applying the TPIC is creating a design which will not interfere with VR operation. A TPIC for a 4 Switch Buck-Boost (4SBB) converter is presented which functions by con- trolling the inductor current slew rate during load current transients. By increasing the inductor current slew rate, the remaining inductor current can be removed from the 4SBB power delivery path and the output voltage spike can be clamped. A second TPIC is presented which is designed to improve the performance of an LDO regulator during output current transients. A TPIC for a LDO regulator is proposed to reduce the over voltage spike settling time. During a load current step down transient, the only current discharging path is a light load current. However, it takes a long time to discharge the current charged in the output capacitors with the light load current. The proposed TPIC will make an additional current discharging path to reduce the long settling time. By reducing the settling time, the load current transient frequency of the LDO regulator can be increased. A Ripple Cancellation Circuit (RCC) is proposed to reduce the output voltage ripple. The RCC has a very similar concept with the TPIC which is sinking or injecting additional current to the power stage to compensate the inductor ripple current. The proposed TPICs and RCC have been implemented with a 0.6m CMOS process. A single-phase VR, a 4SBB converter, and a LDO regulator have been utilized with the proposed TPIC to evaluate its performance. The theoretical analysis will be confirmed by Cadence simulation results and experimental results.

FPGA in-the-loop simulations of cardiac excitation model under voltage clamp conditions

NASA Astrophysics Data System (ADS)

Othman, Norliza; Adon, Nur Atiqah; Mahmud, Farhanahani

2017-01-01

Voltage clamp technique allows the detection of single channel currents in biological membranes in identifying variety of electrophysiological problems in the cellular level. In this paper, a simulation study of the voltage clamp technique has been presented to analyse current-voltage (I-V) characteristics of ion currents based on Luo-Rudy Phase-I (LR-I) cardiac model by using a Field Programmable Gate Array (FPGA). Nowadays, cardiac models are becoming increasingly complex which can cause a vast amount of time to run the simulation. Thus, a real-time hardware implementation using FPGA could be one of the best solutions for high-performance real-time systems as it provides high configurability and performance, and able to executes in parallel mode operation. For shorter time development while retaining high confidence results, FPGA-based rapid prototyping through HDL Coder from MATLAB software has been used to construct the algorithm for the simulation system. Basically, the HDL Coder is capable to convert the designed MATLAB Simulink blocks into hardware description language (HDL) for the FPGA implementation. As a result, the voltage-clamp fixed-point design of LR-I model has been successfully conducted in MATLAB Simulink and the simulation of the I-V characteristics of the ionic currents has been verified on Xilinx FPGA Virtex-6 XC6VLX240T development board through an FPGA-in-the-loop (FIL) simulation.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium/redox flow cells

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.

1977-01-01

The effect of acid concentration on the performance of the iron-titanium redox flow cell was studied. When the acidity was increased, open-circuit voltages decreased on the titanium side but load voltages increased due to decreased polarization. The best load voltage occurs when there is high acidity on the titanium side coupled with low acidity on the iron side, but such cells show voltage losses with repeated cycling because of the diffusion of acid through the membrane. No membrane tested has been found capable of maintaining the differences in acidity. Chelating agents show some promise in reducing polarization at the Ti electrode and thus improving energy efficiency.

Plasma Interactions with High Voltage Solar Arrays for a Direct Drive Hall Effect Thruster System

NASA Technical Reports Server (NTRS)

Schneider, T.; Horvater, M. A.; Vaughn, J.; Carruth, M. R.; Jongeward, G. A.; Mikellides, I. G.

2003-01-01

The Environmental Effects Group of NASA s Marshall Space Flight Center (MSFC) is conducting research into the effects of plasma interaction with high voltage solar arrays. These high voltage solar arrays are being developed for a direct drive Hall Effect Thruster propulsion system. A direct drive system configuration will reduce power system mass by eliminating a conventional power-processing unit. The Environmental Effects Group has configured two large vacuum chambers to test different high-voltage array concepts in a plasma environment. Three types of solar arrays have so far been tested, an International Space Station (ISS) planar array, a Tecstar planar array, and a Tecstar solar concentrator array. The plasma environment was generated using a hollow cathode plasma source, which yielded densities between 10(exp 6) - 10(exp 7) per cubic centimeter and electron temperatures of 0.5-1 eV. Each array was positioned in this plasma and biased in the -500 to + 500 volt range. The current collection was monitored continuously. In addition, the characteristics of arcing, snap over, and other features, were recorded. Analysis of the array performance indicates a time dependence associated with the current collection as well as a tendency for "conditioning" over a large number of runs. Mitigation strategies, to reduce parasitic current collection, as well as arcing, include changing cover-glass geometry and layout as well as shielding the solar cell edges. High voltage performance data for each of the solar array types tested will be presented. In addition, data will be provided to indicate the effectiveness of the mitigation techniques.

Performance Characterization of a Novel Plasma Thruster to Provide a Revolutionary Operationally Responsive Space Capability with Micro- and Nano-Satellites

DTIC Science & Technology

2011-03-24

and radiation resistance of rare earth permanent magnets for applications such as ion thrusters and high efficiency Stirling Radioisotope Generators...from Electron Transitioning Discharge Current Discharge Power Discharge Voltage Θ Divergence Angle Earths Gravity at Sea Level...Hall effect thruster HIVAC High Voltage Hall Accelerator LEO Low Earth Orbit LDS Laser Displacement System LVDT Linear variable differential

Electrical insulation design requirements and reliability goals

NASA Astrophysics Data System (ADS)

Ross, R. G., Jr.

1983-11-01

The solar cells in a photovoltaic module which must be electrically isolated from module exterior surfaces to satisfy a variety of safety and operating considerations are discussed. The performance and reliability of the insulation system are examined. Technical requirements involve the capability of withstanding the differential voltage from the solar cells to the module frame. The maximum system voltage includes consideration of maximum open circuit array voltages achieved under low-temperature, high-irradiance conditions, and transient overvoltages due to system feedback of lightning transients. The latter is bounded by the characteristics of incorporated voltage limiting devices such as MOVs.

Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

NASA Astrophysics Data System (ADS)

Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

High resolution separations of charge variants and disulfide isomers of monoclonal antibodies and antibody drug conjugates using ultra-high voltage capillary electrophoresis with high electric field strength.

PubMed

Henley, W Hampton; He, Yan; Mellors, J Scott; Batz, Nicholas G; Ramsey, J Michael; Jorgenson, James W

2017-11-10

Ultra-high voltage capillary electrophoresis with high electric field strength has been applied to the separation of the charge variants, drug conjugates, and disulfide isomers of monoclonal antibodies. Samples composed of many closely related species are difficult to resolve and quantify using traditional analytical instrumentation. High performance instrumentation can often save considerable time and effort otherwise spent on extensive method development. Ideally, the resolution obtained for a given CE buffer system scales with the square root of the applied voltage. Currently available commercial CE instrumentation is limited to an applied voltage of approximately 30kV and a maximum electric field strength of 1kV/cm due to design limitations. The instrumentation described here is capable of safely applying potentials of at least 120kV with electric field strengths over 2000V/cm, potentially doubling the resolution of the best conventional CE buffer/capillary systems while decreasing analysis time in some applications. Separations of these complex mixtures using this new instrumentation demonstrate the potential of ultra-high voltage CE to identify the presence of previously unresolved components and to reduce analysis time for complex mixtures of antibody variants and drug conjugates. Copyright © 2017 Elsevier B.V. All rights reserved.

Experimental results on plasma interactions with large surfaces at high voltages

NASA Technical Reports Server (NTRS)

Grier, N. T.

1980-01-01

Multikilowatt power levels for future payloads can be more efficiently generated using solar arrays operating in the kilovolt range. This implies that large areas of the array at high operating voltages will be exposed to the space plasma environment. The resulting interactions of these high voltage surfaces with space plasma environments can seriously impact the performance of the satellite system. The plasma-surface interaction phenomena were studied in tests performed in two separate vacuum chambers, a 4.6 m diameter by 19.2 long chamber and a 20 m diameter by 27.4 m long chamber. The generated plasma density was approximately 1x10 to the 4th power/cu cm. Ten solar array panels, each with areas of 1400 sq cm were used in the tests. Nine of the solar panels were tested as a composite unit in the form of a 3x3 solar panel matrix. The results from all the tests confirmed small sample tests results: insulators were found to enhance the plasma coupling current for high positive bias and arcing was found to occur at high negative bias.

Solution-processable alumina: PVP nanocomposite dielectric layer for high-performance organic thin-film transistors

NASA Astrophysics Data System (ADS)

Lin, Hui; Kong, Xiao; Li, Yiran; Kuang, Peng; Tao, Silu

2018-03-01

In this article, we have investigated the effect of nanocomposite gate dielectric layer built by alumina (Al2O3) and poly(4-vinyphenol) (PVP) with solution method which could enhance the dielectric capability and decrease the surface polarity. Then, we used modify layer to optimize the surface morphology of dielectric layer to further improve the insulation capability, and finally we fabricated the high-performance and low-voltage organic thin-film transistors by using this nanocomposite dielectric layer. The result shows that the devices with Al2O3:10%PVP dielectric layer with a modified layer exhibited a mobility of 0.49 cm2/Vs, I on/Ioff ratio of 7.8 × 104, threshold voltage of - 1.2 V, sub-threshold swing of 0.3 V/dec, and operating voltage as low as - 4 V. The improvement of devices performance was owing to the good insulation capability, appropriate capacitance of dielectric layer, and preferable interface contact, smaller crystalline size of active layer.

Investigation of a compact coaxially fed switched oscillator.

PubMed

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ~0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

Integration Test of the High Voltage Hall Accelerator System Components

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Pinero, Luis; Peterson, Todd; Dankanich, John

2013-01-01

NASA Glenn Research Center is developing a 4 kilowatt-class Hall propulsion system for implementation in NASA science missions. NASA science mission performance analysis was completed using the latest high voltage Hall accelerator (HiVHAc) and Aerojet-Rocketdyne's state-of-the-art BPT-4000 Hall thruster performance curves. Mission analysis results indicated that the HiVHAc thruster out performs the BPT-4000 thruster for all but one of the missions studied. Tests of the HiVHAc system major components were performed. Performance evaluation of the HiVHAc thruster at NASA Glenn's vacuum facility 5 indicated that thruster performance was lower than performance levels attained during tests in vacuum facility 12 due to the lower background pressures attained during vacuum facility 5 tests when compared to vacuum facility 12. Voltage-Current characterization of the HiVHAc thruster in vacuum facility 5 showed that the HiVHAc thruster can operate stably for a wide range of anode flow rates for discharge voltages between 250 and 600 volts. A Colorado Power Electronics enhanced brassboard power processing unit was tested in vacuum for 1,500 hours and the unit demonstrated discharge module efficiency of 96.3% at 3.9 kilowatts and 650 volts. Stand-alone open and closed loop tests of a VACCO TRL 6 xenon flow control module were also performed. An integrated test of the HiVHAc thruster, brassboard power processing unit, and xenon flow control module was performed and confirmed that integrated operation of the HiVHAc system major components. Future plans include continuing the maturation of the HiVHAc system major components and the performance of a single-string integration test.

Planar multijunction high voltage solar cells

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

1980-01-01

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Towards highly stable polymer electronics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nikolka, Mark; Nasrallah, Iyad; Broch, Katharina; Sadhanala, Aditya; Hurhangee, Michael; McCulloch, Iain; Sirringhaus, Henning

2016-11-01

Due to their ease of processing, organic semiconductors are promising candidates for applications in high performance flexible displays and fast organic electronic circuitry. Recently, a lot of advances have been made on organic semiconductors exhibiting surprisingly high performance and carrier mobilities exceeding those of amorphous silicon. However, there remain significant concerns about their operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode (OLED) displays. Here, we report a novel technique for dramatically improving the operational stress stability, performance and uniformity of high mobility polymer field-effect transistors by the addition of specific small molecule additives to the polymer semiconductor film. We demonstrate for the first time polymer FETs that exhibit stable threshold voltages with threshold voltage shifts of less than 1V when subjected to a constant current operational stress for 1 day under conditions that are representative for applications in OLED active matrix displays. The approach constitutes in our view a technological breakthrough; it also makes the device characteristics independent of the atmosphere in which it is operated, causes a significant reduction in contact resistance and significantly improves device uniformity. We will discuss in detail the microscopic mechanism by which the molecular additives lead to this significant improvement in device performance and stability.

Optimizing abdominal CT dose and image quality with respect to x-ray tube voltage

NASA Astrophysics Data System (ADS)

Huda, Walter; Ogden, Kent M.

2004-05-01

The objective of this study was to identify the x-ray tube voltage that results in optimum performance for abdominal CT imaging for a range of imaging tasks and patient sizes. Theoretical calculations were performed of the contrast to noise ratio (CNR) for disk shaped lesions of muscle, fat, bone and iodine embedded in a uniform water background. Lesion contrast was the mean Hounsfield Unit value at the effective photon energy, and image noise was determined from the total radiation intensity incident on the CT x-ray detector. Patient size ranging from young infants (10 kg) to oversized adults (120 kg), with CNR values obtained for x-ray tube voltages ranging from 80 to 140 kV. Patients of varying sizes were modeled as an equivalent cylinder of water, and the mean section dose (D) was determined for each selected x-ray tube kV value at a constant mAs. For each patient size and lesion type, we identified an optimal kV as the x-ray tube voltage that yields a maximum value of the figure of merit (CNR2/D). Increasing the x-ray tube voltage from 80 to 140 kV reduced lesion contrast by 11% for muscle, 21% for fat, 35% for bone and 52% for iodine, and these reductions were approximately independent of patient size. Increasing the x-ray tube voltage from 80 to 140 kV increased a muscle lesion CNR relative to a uniform water background by a factor of 2.6, with similar trends observed for fat (2.3), bone (1.9) and iodine (1.4). The improvement in lesion CNR with increasing x-ray tube voltage was highest for the largest sized patients. Increasing the x-ray tube voltage from 80 to 140 kV increased the patient dose by a factor of between 5.0 and 6.2 depending on the patient size. For small sized patients (10 and 30 kg) and muscle lesions, best performance is obtained at 80 kV; however, for adults (70 kg) and oversized adults (120 kg), the best performance would be obtained at 140 kV. Imaging fat lesions was best performed at 80 kV for all patients except for oversized adults, where 140 kV offers the best imaging performance. For high Z lesions of bone and iodine, imaging performance generally degrades with increasing kV for all patient sizes, with the degree of degradation largest for the smallest patients. We conclude that 80 kV is optimal with respect to radiation dose in abdominal CT for all pediatric patients. For adults, 80 kV is the x-ray voltage of choice for high Z lesions, whereas 140 kV would generally be the voltage of choice of lesions that have an atomic number similar to that of water.

MO-FG-CAMPUS-IeP2-05: Feasibility Demonstration of High-Voltage Clinical CT and Impact On X-Ray Penetration Through Metal Objects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Y; De Man, B; Robinson, V

Purpose: To demonstrate the possibility and quantify the impact of operating a clinical CT scanner at exceptionally high x-ray tube voltage for better penetration through metal objects and facilitating metal artifact reduction. Methods: We categorize metal objects according to the data corruption severeness (level of distortion and complete photon starvation fraction). To demonstrate feasibility and investigate the impact of high voltage scanning we modified a commercial GE LightSpeed VCT scanner (generator and software) to enable CT scans with x-ray tube voltages as high as 175 kVp. A 20 cm diameter water phantom with two metal rods (10 mm stainless andmore » 25 mm titanium) and a water phantom with realistic metal object (spine cage) were used to evaluate the data corruption and image artifacts in the absence of any algorithm correction. We also performed simulations to confirm our understanding of the transmitted photon levels through metal objects with different size and composition. Results: The reconstructed images at 175 kVp still have significant dark shading artifacts, as expected since no special scatter correction or beam hardening was performed but show substantially lower noise and photon starvation than at lower kVp due to better beam penetration. Analysis of the raw data shows that the photon starved data is reduced from over 4% at 140 kVp to below 0.2% at 175 kVp. The simulations indicate that for clinically relevant titanium and stainless objects a 175 kVp tube voltage effectively avoids photon starvation. Conclusion: The use of exceptionally high tube voltage on a clinical CT system is a practical and effective solution to avoid photon starvation caused by certain metal implants. Sparse and hybrid high-voltage protocols are being considered to maintain low patient dose. This opens the door to algorithmic physics-based corrections rather than treating the data as missing and relying on missing data algorithms. Some of the authors are employees of General Electric.« less

A Proposal for a High-Voltage Transmission Line Directional Coupler

DOE PAGES

Olsen, R. G.; Li, Zhi

2017-02-01

Directional couplers are devices generally used in high frequency transmission lines and waveguides that respond to forward and reverse traveling waves separately. Hence they can be used to either measure standing wave ratio in the steady state or to determine the direction of a propagating transient wave. Here, a design is proposed for a directional coupler to be used on multimode high voltage transmission lines. Its performance is analyzed and several suggestions are made for improving its design.

A magnesium–sodium hybrid battery with high operating voltage

DOE PAGES

Dong, Hui; Li, Yifei; Liang, Yanliang; ...

2016-06-10

Here, we report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mA h g –1. We also demonstrate the cell with an energy density of 135 W h kg –1 and a high power density of up to 1.67 kW kg –1.

Integration Testing of a Modular Discharge Supply for NASA's High Voltage Hall Accelerator Thruster

NASA Technical Reports Server (NTRS)

Pinero, Luis R.; Kamhawi, hani; Drummond, Geoff

2010-01-01

NASA s In-Space Propulsion Technology Program is developing a high performance Hall thruster that can fulfill the needs of future Discovery-class missions. The result of this effort is the High Voltage Hall Accelerator thruster that can operate over a power range from 0.3 to 3.5 kW and a specific impulse from 1,000 to 2,800 sec, and process 300 kg of xenon propellant. Simultaneously, a 4.0 kW discharge power supply comprised of two parallel modules was developed. These power modules use an innovative three-phase resonant topology that can efficiently supply full power to the thruster at an output voltage range of 200 to 700 V at an input voltage range of 80 to 160 V. Efficiencies as high as 95.9 percent were measured during an integration test with the NASA103M.XL thruster. The accuracy of the master/slave current sharing circuit and various thruster ignition techniques were evaluated.

Repetitive compact flash x-ray generators for soft radiography

NASA Astrophysics Data System (ADS)

Sato, Eiichi; Shikoda, Arimitsu; Kimura, Shingo; Sagae, Michiaki; Oizumi, Teiji; Takahashi, Kei; Hayasi, Yasuomi; Shoji, Tetsuo; Shishido, Koro; Tamakawa, Yoshiharu; Yanagisawa, Toru

1993-01-01

The construction and the fundamental studies for the repetitive flash x-ray generators designed by Japan Impulse Laboratory in Iwate Medical University are described. These generators are classified to the following two major types: (1) generators having diodes, and (2) generators having triodes. In order to generate high-voltage impulses, we employed the following transmission lines (pulsers): (a) high-voltage-inversion type with a maximum output voltage Vom of about 80 kV, (b) high-voltage- inversion type having a coaxial cable (Vom equals 130 kV), (c) two-stage Marx pulser (Vom equals 150 kV), (d) two-cable-type Blumlein (Vom equals 120 kV), (e) modified Blumlein (Vom equals 120 kV), (f) fundamental transmission line for triode (Vom equals 100 kV), and (g) transmission line for an enclosed triode (Vom equals 100 kV). Using these generators we succeeded in performing high-speed radiography as follows: (a) delayed radiography; (b) multiple-shot radiography; and (c) cineradiography.

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

PubMed

Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

2016-08-10

Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

High voltage interactions of a sounding rocket with the ambient and system-generated environments

NASA Technical Reports Server (NTRS)

Kuharski, Robert A.; Jongeward, Gary A.; Wilcox, Katherine G.; Rankin, Thomas V.; Roche, James C.

1990-01-01

EPSAT (environment power system analysis tool) is used to examine the design of SPEAR III, which is scheduled to fly in early 1991. It will test high-voltage designs in both ambient and system-generated environments. Two of the key questions that the experiment hopes to address are whether or not the earth's magnetic field can cause the current that a high-voltage object draws from the plasma to be far less than the current that would be drawn in the absence of the magnetic field and under what neutral environmental conditions a discharge from the high-voltage object to the plasma will occur. The EPSAT program makes it possible to perform a variety of analyses on a preliminary or conceptual-level description of a system in a short period of time. The calculations presented on SPEAR III are all done for a conceptual-level description. The calculations indicate that the experiment will produce the conditions necessary to address these questions.

Measurement of low radioactivity background in a high voltage cable by high resolution inductively coupled plasma mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vacri, M. L. di; Nisi, S.; Balata, M.

2013-08-08

The measurement of naturally occurring low level radioactivity background in a high voltage (HV) cable by high resolution inductively coupled plasma mass spectrometry (HR ICP MS) is presented in this work. The measurements were performed at the Chemistry Service of the Gran Sasso National Laboratory. The contributions to the radioactive background coming from the different components of the heterogeneous material were separated. Based on the mass fraction of the cable, the whole contamination was calculated. The HR ICP MS results were cross-checked by gamma ray spectroscopy analysis that was performed at the low background facility STELLA (Sub Terranean Low Levelmore » Assay) of the LNGS underground lab using HPGe detectors.« less

A wind tunnel study on the effects of complex topography on wind turbine performance

NASA Astrophysics Data System (ADS)

Howard, Kevin; Hu, Stephen; Chamorro, Leonardo; Guala, Michele

2012-11-01

A set of wind tunnel experiments were conducted to study the response of a wind turbine under flow conditions typically observed at the wind farm scale, in complex terrain. A scale model wind turbine was placed in a fully developed turbulent boundary layer flow obtained in the SAFL Wind Tunnel. Experiments focused on the performance of a turbine model, under the effects induced by a second upwind turbine or a by three-dimensional, sinusoidal hill, peaking at the turbine hub height. High frequency measurements of fluctuating streamwise and wall normal velocities were obtained with a X-wire anemometer simultaneously with the rotor angular velocity and the turbine(s) voltage output. Velocity measurements in the wake of the first turbine and of the hill were used to determine the inflow conditions for the downwind test turbine. Turbine performance was inferred by the mean and fluctuating voltage statistics. Specific experiments were devoted to relate the mean voltage to the mean hub velocity, and the fluctuating voltage to the unsteadiness in the rotor kinematics induced by the perturbed (hill or turbine) or unperturbed (boundary layer) large scales of the incoming turbulent flow. Results show that the voltage signal can be used to assess turbine performance in complex flows.

Performance analysis of cascaded h-bridge multilevel inverter using mixed switching frequency with various dc-link voltages

NASA Astrophysics Data System (ADS)

Citarsa, I. B. F.; Satiawan, I. N. W.; Wiryajati, I. K.; Supriono

2016-01-01

Multilevel inverters have been widely used in many applications since the technology is advantageous to increase the converter capability as well as to improve the output voltage quality. According to the applied switching frequency, multilevel modulations can be subdivided into three classes, i.e: fundamental switching frequency, high switching frequency and mixed switching frequency. This paper investigates the performance of cascaded H-bridge (CHB) multilevel inverter that is modulated using mixed switching frequency (MSF) PWM with various dc-link voltage ratios. The simulation results show the nearly sinusoidal load output voltages are successfully achieved. It is revealed that there is improvement in output voltages quality in terms of THD and low-order harmonics content. The CHB inverter that is modulated using MSF PWM with equal dc-link voltage ratio (½ Vdc: ½ Vdc) produces output voltage with the lowest low-order harmonics (less than 1% of fundamental) while the CHB inverter that is modulated using MSF PWM with un-equal dc-link voltage ratio (2/3 Vdc: 1/3 Vdc) produces a 7-level output voltage with the lowest THD (16.31%) compared to the other PWM methods. Improvement of the output voltage quality here is also in line with improvement of the number of available levels provided in the output voltage. Here only 2 cells H-bridge inverter (contain 8 switches) are needed to produce a 7- level output voltage, while in the conventional CHB inverter at least 3 cells of H-bridge inverter (contain 12 switches) are needed to produce a 7-level output voltage. Hence it is valuable in term of saving number of component.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

PubMed

Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

2012-09-12

The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

NASA Astrophysics Data System (ADS)

Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

2015-06-01

High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

High-voltage zones within the pulmonary vein antra: Major determinants of acute pulmonary vein reconnections after atrial fibrillation ablation.

PubMed

Nagashima, Koichi; Watanabe, Ichiro; Okumura, Yasuo; Iso, Kazuki; Takahashi, Keiko; Watanabe, Ryuta; Arai, Masaru; Kurokawa, Sayaka; Nakai, Toshiko; Ohkubo, Kimie; Yoda, Shunichi; Hirayama, Atsushi

2017-08-01

Recurrence of atrial fibrillation (AF) after pulmonary vein isolation (PVI) is mainly due to PV reconnections. Patient-specific tissue characteristics that may contribute remain unidentified. This study aimed to assess the relationship between the bipolar electrogram voltage amplitudes recorded from the PV-left atrial (LA) junction and acute PV reconnection sites. Three-dimensional LA voltage maps created before an extensive encircling PVI in 47 AF patients (31 men; mean age 62 ± 11 years) were examined for an association between the EGM voltage amplitude recorded from the PV-LA junction and acute post-PVI PV reconnections (spontaneous PV reconnections and/or ATP-provoked dormant PV conduction). Acute PV reconnections were observed in 17 patients (36%) and in 24 (3%) of the 748 PV segments (16 segments per patient) and were associated with relatively high bipolar voltage amplitudes (3.26 ± 0.85 vs. 1.79 ± 1.15 mV, p < 0.0001) and a relatively low mean force-time integral (FTI) (428 ± 56 vs. 473 ± 76 gs, p = 0.0039) as well as FTI/PV-LA bipolar voltage (137 [106, 166] vs. 295 [193, 498] gs/mV, p < 0.0001). An analysis of the receiver operating characteristic curves revealed a high prognostic performance of the LA bipolar voltage and FTI/PV-LA bipolar voltage for acute PV reconnections (areas under the curve: 0.86 and 0.89, respectively); the best cutoff values were >2.12 mV and ≤183 gs/mV, respectively. The PV-LA voltage on the PV-encircling ablation line and FTI/PV-LA voltage were related to the acute post-PVI PV reconnections. A more durable ablation strategy is warranted for high-voltage zones.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Enhanced performance of wearable piezoelectric nanogenerator fabricated by two-step hydrothermal process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Yu; Lei, Jixue; Yin, Bing

2014-03-17

A simple two-step hydrothermal process was proposed for enhancing the performance of the nanogenerator on flexible and wearable terylene-fabric substrate. With this method, a significant enhancement in output voltage of the nanogenerator from ∼10 mV to 7 V was achieved, comparing with the one by conventional one-step process. In addition, another advantage with the devices synthesized by two-step hydrothermal process was that their output voltages are only sensitive to strain rather than strain rate. The devices with a high output voltage have the ability to power common electric devices and will have important applications in flexible electronics and wearable devices.

OFCC based voltage and transadmittance mode instrumentation amplifier

NASA Astrophysics Data System (ADS)

Nand, Deva; Pandey, Neeta; Pandey, Rajeshwari; Tripathi, Prateek; Gola, Prashant

2017-07-01

The operational floating current conveyor (OFCC) is a versatile active block due to the availability of both low and high input and output impedance terminals. This paper addresses the realization of OFCC based voltage and transadmittance mode instrumentation amplifiers (VMIA and TAM IA). It employs three OFCCs and seven resistors. The transadmittance mode operation can easily be obtained by simply connecting an OFCC based voltage to current converter at the output. The effect of non-idealities of OFCC, in particular finite transimpedance and tracking error, on system performance is also dealt with and corresponding mathematical expressions are derived. The functional verification is performed through SPICE simulation using CMOS based implementation of OFCC.

Mixed polyanion glass cathodes: Glass-state conversion reactions

DOE PAGES

Kercher, Andrew K.; Kolopus, James A.; Carroll, Kyler; ...

2015-11-10

Mixed polyanion (MP) glasses can undergo glass-state conversion (GSC) reactions to provide an alternate class of high-capacity cathode materials. GSC reactions have been demonstrated in phosphate/vanadate glasses with Ag, Co, Cu, Fe, and Ni cations. These MP glasses provided high capacity and good high power performance, but suffer from moderate voltages, large voltage hysteresis, and significant capacity fade with cycling. Details of the GSC reaction have been revealed by x-ray absorption spectroscopy, electron microscopy, and energy dispersive x-ray spectroscopy of ex situ cathodes at key states of charge. Using the Open Quantum Materials Database (OQMD), a computational thermodynamic model hasmore » been developed to predict the near-equilibrium voltages of glass-state conversion reactions in MP glasses.« less

Current collection by high voltage anodes in near ionospheric conditions

NASA Technical Reports Server (NTRS)

Antoniades, John A.; Greaves, Rod G.; Boyd, D. A.; Ellis, R.

1990-01-01

The authors experimentally identified three distinct regimes with large differences in current collection in the presence of neutrals and weak magnetic fields. In magnetic field/anode voltage space the three regions are separated by very sharp transition boundaries. The authors performed a series of laboratory experiments to study the dependence of the region boundaries on several parameters, such as the ambient neutral density, plasma density, magnetic field strength, applied anode voltage, voltage pulsewidth, chamber material, chamber size and anode radius. The three observed regimes are: classical magnetic field limited collection; stable medium current toroidal discharge; and large scale, high current space glow discharge. There is as much as several orders of magnitude of difference in the amount of collected current upon any boundary crossing, particularly if one enters the space glow regime. They measured some of the properties of the plasma generated by the breakdown that is present in regimes II and III in the vicinity of the anode including the sheath modified electrostatic potential, I-V characteristics at high voltage as well as the local plasma density.

Electro-optical properties of low viscosity driven holographic polymer dispersed liquid crystals

NASA Astrophysics Data System (ADS)

Moon, K. R.; Bae, S. Y.; Kim, B. K.

2015-04-01

Relative diffraction efficiency (RDE), operating voltage, and response times are most important performance characteristics of holographic polymer dispersed liquid crystals (HPDLC). Two types of triallyl isocyanurate (TI) having different structures were incorporated into the conventional transmission grating of HPDLC. Premix viscosity decreased by 13-18% with up to 3% TI, beyond which it increased. TI eliminated induction period and augmented initial grating formation rate at all contents. Saturation RDE increased over 200% while threshold voltage and rise time decreased to about half and 2/3, respectively up to 3% TI, beyond which the tendencies were reversed. Among the two TIs, low viscosity monomer (TA) showed high RDE, while high miscibility monomer (TE) low characteristic voltages and short response times. It is concluded that grating formation is largely favored by low viscosity, while interface tensions and electro-optical performances by miscibility at similar viscosities.

Real time radiation dosimeters based on vertically aligned multiwall carbon nanotubes and graphene.

PubMed

Funaro, Maria; Sarno, Maria; Ciambelli, Paolo; Altavilla, Claudia; Proto, Antonio

2013-02-22

Measurements of the absorbed dose and quality assurance programs play an important role in radiotherapy. Ionization chambers (CIs) are considered the most important dosimeters for their high accuracy, practicality and reliability, allowing absolute dose measurements. However, they have a relative large physical size, which limits their spatial resolution, and require a high bias voltage to achieve an acceptable collection of charges, excluding their use for in vivo dosimetry. In this paper, we propose new real time radiation detectors with electrodes based on graphene or vertically aligned multiwall carbon nanotubes (MWCNTs). We have investigated their charge collection efficiency and compared their performance with electrodes made of a conventional material. Moreover, in order to highlight the effect of nanocarbons, reference radiation detectors were also tested. The proposed dosimeters display an excellent linear response to dose and collect more charge than reference ones at a standard bias voltage, permitting the construction of miniaturized CIs. Moreover, an MWCNT based CI gives the best charge collection efficiency and it enables working also to lower bias voltages and zero volts, allowing in vivo applications. Graphene based CIs show better performance with respect to reference dosimeters at a standard bias voltage. However, at decreasing bias voltage the charge collection efficiency becomes worse if compared to a reference detector, likely due to graphene's semiconducting behavior.

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

NASA Astrophysics Data System (ADS)

Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

2017-10-01

Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

Performance analysis of electronic power transformer based on neuro-fuzzy controller.

PubMed

Acikgoz, Hakan; Kececioglu, O Fatih; Yildiz, Ceyhun; Gani, Ahmet; Sekkeli, Mustafa

2016-01-01

In recent years, electronic power transformer (EPT), which is also called solid state transformer, has attracted great interest and has been used in place of the conventional power transformers. These transformers have many important functions as high unity power factor, low harmonic distortion, constant DC bus voltage, regulated output voltage and compensation capability. In this study, proposed EPT structure contains a three-phase pulse width modulation rectifier that converts 800 Vrms AC to 2000 V DC bus at input stage, a dual active bridge converter that provides 400 V DC bus with 5:1 high frequency transformer at isolation stage and a three-phase two level inverter that is used to obtain AC output at output stage. In order to enhance dynamic performance of EPT structure, neuro fuzzy controllers which have durable and nonlinear nature are used in input and isolation stages instead of PI controllers. The main aim of EPT structure with the proposed controller is to improve the stability of power system and to provide faster response against disturbances. Moreover, a number of simulation results are carried out to verify EPT structure designed in MATLAB/Simulink environment and to analyze compensation ability for voltage harmonics, voltage flicker and voltage sag/swell conditions.

Molecular interfaces for plasmonic hot electron photovoltaics

NASA Astrophysics Data System (ADS)

Pelayo García de Arquer, F.; Mihi, Agustín; Konstantatos, Gerasimos

2015-01-01

The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices.The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices. Electronic supplementary information (ESI) available: Contact-potential differentiometry measurements, FTIR characterization, performance statistics and gold devices. See DOI: 10.1039/c4nr06356b

Design of a high voltage input - output ratio dc-dc converter dedicated to small power fuel cell systems

NASA Astrophysics Data System (ADS)

Béthoux, O.; Cathelin, J.

2010-12-01

Consuming chemical energy, fuel cells produce simultaneously heat, water and useful electrical power [J.M. Andújar, F. Segura, Renew. Sust. Energy Rev. 13, 2309 (2009)], [J. Larminie, A. Dicks, Fuel Cell Systems Explained, 2nd edn. (John Wiley & Sons, 2003)]. As a matter of fact, the voltage generated by a fuel cell strongly depends on both the load power demand and the operating conditions. Besides, as a result of many design aspects, fuel cells are low voltage and high current electric generators. On the contrary, electric loads are commonly designed for small voltage swing and a high V/I ratio in order to minimize Joule losses. Therefore, electric loads supplied by fuel cells are typically fed by means of an intermediate power voltage regulator. The specifications of such a power converter are to be able to step up the input voltage with a high ratio (a ratio of 10 is a classic situation) and also to work with an excellent efficiency (in order to minimize its size, its weight and its losses) [A. Shahin, B. Huang, J.P. Martin, S. Pierfederici, B. Davat, Energy Conv. Manag. 51, 56 (2010)]. This paper deals with the design of this essential ancillary device. It intends to bring out the best structure for fulfilling this function. Several dc-dc converters with large voltage step-up ratios are introduced. A topology based on a coupled inductor or tapped inductor is closely studied. A detailed modelling is performed with the purpose of providing designing rules. This model is validated with both simulation and implementation. The experimental prototype is based on the following specifications: the fuel cell output voltage ranges from a 50 V open-voltage to a 25 V rated voltage while the load requires a constant 250 V voltage. The studied coupled inductor converter is compared with a classic boost converter commonly used in this voltage elevating application. Even though the voltage regulator faces severe FC specifications, the measured efficiency reaches 96% at the rated power whereas conventional boost efficiency barely achieves 91.5% in the same operating conditions.

An Improved Power Quality BIBRED Converter-Based VSI-Fed BLDC Motor Drive

NASA Astrophysics Data System (ADS)

Singh, Bhim; Bist, Vashist

2014-01-01

This paper presents an IHQRR (integrated high-quality rectifier regulator) BIBRED (boost integrated buck rectifier energy storage DC-DC) converter-based VSI (voltage source inverter)-fed BLDC (brushless DC) motor drive. The speed control of BLDC motor is achieved by controlling the DC link voltage of the VSI using a single voltage sensor. This allows VSI to operate in fundamental frequency switching mode for electronic commutation of BLDC motor which reduces the switching losses due to high-frequency switching used in conventional approach of PWM (pulse width modulation)-based VSI-fed BLDC motor drive. A BIBRED converter is operated in a dual-DCM (discontinuous conduction mode) thus using a voltage follower approach for PFC (power factor correction) and DC link voltage control. The performance of the proposed drive is evaluated for improved power quality over a wide range of speed control and supply voltage variation for demonstrating the behavior of proposed drive. The power quality indices thus obtained are within the recommended limits by international PQ (power quality) standards such as IEC 61000-3-2.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

NASA Astrophysics Data System (ADS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-04-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

PubMed

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

NASA Astrophysics Data System (ADS)

Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

2015-08-01

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, N.; Department of Electrical and Computer Engineering, MSC01 1100, University of New Mexico, Albuquerque, New Mexico 87131-0001; Branch, D. W.

2015-08-15

A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5more » μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

DOE PAGES

Patel, N.; Branch, D. W.; Schamiloglu, E.; ...

2015-08-11

A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO 3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses tomore » both crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

Advanced Initiation Systems Manufacturing Level 2 Milestone Completion Summary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, R; Schmidt, M

2009-10-01

Milestone Description - Advanced Initiation Systems Detonator Design and Prototype. Milestone Grading Criteria - Design new generation chip slapper detonator and manufacture a prototype using advanced manufacturing processes, such as all-dry chip metallization and solvent-less flyer coatings. The advanced processes have been developed for manufacturing detonators with high material compatibility and reliability to support future LEPs, e.g. the B61, and new weapons systems. Perform velocimetry measurements to determine slapper velocity as a function of flight distance. A prototype detonator assembly and stripline was designed for low-energy chip slappers. Pictures of the prototype detonator and stripline are shown. All-dry manufacturing processesmore » were used to address compatibility issues. KCP metallized the chips in a physical vapor deposition system through precision-aligned shadow masks. LLNL deposited a solvent-less polyimide flyer with a processes called SLIP, which stands for solvent-less vapor deposition followed by in-situ polymerization. LANL manufactured the high-surface-area (HSA) high explosive (HE) pellets. Test fires of two chip slapper designs, radius and bowtie, were performed at LLNL in the High Explosives Application Facility (HEAF). Test fires with HE were conducted to establish the threshold firing voltages. pictures of the chip slappers before and after test fires are shown. Velocimetry tests were then performed to obtain slapper velocities at or above the threshold firing voltages. Figure 5 shows the slapper velocity as a function of distance and time at the threshold voltage, for both radius and bowtie bridge designs. Both designs were successful at initiating the HE at low energy levels. Summary of Accomplishments are: (1) All-dry process for chip manufacture developed; (2) Solventless process for slapper materials developed; (3) High-surface area explosive pellets developed; (4) High performance chip slappers developed; (5) Low-energy chip slapper detonator designs; and (6) Low-voltage threshold chip slapper detonator demonstrated.« less

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

Enhancing the High-Voltage Cycling Performance of LiNi1/3Co1/3Mn1/3O2/Graphite Batteries Using Alkyl 3,3,3-Trifluoropropanoate as an Electrolyte Additive.

PubMed

Zheng, Xiangzhen; Huang, Tao; Pan, Ying; Wang, Wenguo; Fang, Guihuang; Ding, Kaining; Wu, Maoxiang

2017-06-07

The present study demonstrates that the use of alkyl 3,3,3-trifluoropropanoate, including methyl 3,3,3-trifluoropropanoate (TFPM) and ethyl 3,3,3-trifluoropropanoate (TFPE), as new electrolyte additive can dramatically enhance the high-voltage performance of LiNi 1/3 Co 1/3 Mn 1/3 O 2 /graphite lithium-ion batteries (3.0-4.6 V, vs Li/Li + ). The capacity retention was significantly increased from 45.6% to 75.4% after 100 charge-discharge cycles due to the addition of 0.2 wt % TFPM in the electrolyte, and significantly increased from 45.6% to 76.1% after 100 charge-discharge cycles due to the addition of 0.5 wt % TFPE in the electrolyte, verifying their suitability in this application. Electrochemical impedance spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy were employed to study the effect of TFPM and TFPE on cell performance. The data indicates that the improved cycling activity can be ascribed to the participation of TFPM or TFPE in the formation of a thinner cathode/electrolyte interfacial film, thereby enhancing the cell cycling performance owing to a reduced interfacial resistance at high voltage.

Increasing the High Voltage Capabilities and Exploring Parameter Space of an Inertial Electrostatic Confinement Fusion Neutron Source for the Detection of Chemical Explosives

NASA Astrophysics Data System (ADS)

Michalak, Matthew K.

The objectives of the work presented here include understanding key operating principles and providing precise data sets that can be used to test inertial electrostatic confinement (IEC) fusion theory and optimize IEC device operation. The underlying physical behavior was separated from superficial trends observed in an IEC device at the University of Wisconsin-Madison (UW). The effects of changing voltage (30-170 kV) and current (30-100 mA) were thoroughly explored, pressure effects (0.15-1.25 mTorr) were mapped, and the effect of impurities in the system was quantified. The most challenging part of this work was designing a high voltage feedthrough that could reliably operate at higher voltages for far longer times than previously attained. A system to detect conventional explosives using fusion neutrons was also designed, constructed, and tested. Precise data sets were created by taking into account and minimizing the effects of short and long term trends in the experiment. Detailed meter current scans were taken that showed a linear relationship of the neutron production rate with current. Cathode voltage scans were slightly greater than linear in the neutron rate from 30 to 170 kV, but the rate increase diminished to near linear as 170 kV was approached. A new high voltage feedthrough was designed that surpassed the performance of past UW IEC lab feedthroughs and shows promise for long duration operation at still higher voltages. Limitations of other equipment in the IEC lab prevented testing the feedthrough to voltages above 175 kV. A more robust construction of the feedthrough and reducing the consequences of a feedthrough failure were also important design criteria that were met. A detector array was made to detect explosives via the 10.8 MeV neutron capture prompt gamma from nitrogen. Signals from four separate detectors were combined to make the individual detectors act similar to one large detector. The detector signals were both summed and combined to compare the performance of the two methods. An overwhelming background radiation signal and insufficient time resolution were two factors that led to the combined signal not performing as well as the summed signal.

Complementary power output characteristics of electromagnetic generators and triboelectric generators.

PubMed

Fan, Feng-Ru; Tang, Wei; Yao, Yan; Luo, Jianjun; Zhang, Chi; Wang, Zhong Lin

2014-04-04

Recently, a triboelectric generator (TEG) has been invented to convert mechanical energy into electricity by a conjunction of triboelectrification and electrostatic induction. Compared to the traditional electromagnetic generator (EMG) that produces a high output current but low voltage, the TEG has different output characteristics of low output current but high output voltage. In this paper, we present a comparative study regarding the fundamentals of TEGs and EMGs. The power output performances of the EMG and the TEG have a special complementary relationship, with the EMG being a voltage source and the TEG a current source. Utilizing a power transformed and managed (PTM) system, the current output of a TEG can reach as high as ∼3 mA, which can be coupled with the output signal of an EMG to enhance the output power. We also demonstrate a design to integrate a TEG and an EMG into a single device for simultaneously harvesting mechanical energy. In addition, the integrated NGs can independently output a high voltage and a high current to meet special needs.

High voltage DC switchgear development for multi-kW space power system: Aerospace technology development of three types of solid state power controllers for 200-1100VDC with current ratings of 25, 50, and 80 amperes with one type utilizing an electromechanical device

NASA Technical Reports Server (NTRS)

Billings, W. W.

1981-01-01

Three types of solid state power controllers (SSPC's) for high voltage, high power DC system applications were developed. The first type utilizes a SCR power switch. The second type employes an electromechanical power switch element with solid state commutation. The third type utilizes a transistor power switch. Significant accomplishments include high operating efficiencies, fault clearing, high/low temperature performance and vacuum operation.

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Enhancement of SPES source performances.

PubMed

Fagotti, E; Palmieri, A; Ren, X

2008-02-01

Installation of SPES source at LNL was finished in July 2006 and the first beam was extracted in September 2006. Commissioning results confirmed very good performance of the extracted current density. Conversely, source reliability was very poor due to glow-discharge phenomena, which were caused by the ion source axial magnetic field protruding in the high-voltage column. This problem was fixed by changing the stainless steel plasma electrode support with a ferromagnetic one. This new configuration required us to recalculate ion source solenoids positions and fields in order to recover the correct resonance pattern. Details on magnetic simulations and experimental results of high voltage column shielding are presented.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

NASA Astrophysics Data System (ADS)

Sangwan, Vinod K.; Jariwala, Deep; Everaerts, Ken; McMorrow, Julian J.; He, Jianting; Grayson, Matthew; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

2014-02-01

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

An LED solar simulator for student labs

NASA Astrophysics Data System (ADS)

González, Manuel I.

2017-05-01

Measuring voltage-current and voltage-power curves of a photovoltaic module is a nice experiment for high school and undergraduate students. In labs where real sunlight is not available this experiment requires a solar simulator. A prototype of a simulator using LED lamps has been manufactured and tested, and a comparison with classical halogen simulators has been performed. It is found that LED light offers lower levels of irradiance, but much better performance in terms of module output for a given irradiance.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

PubMed

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

High-voltage subnanosecond dielectric breakdown

NASA Astrophysics Data System (ADS)

Mankowski, John Jerome

Current interests in ultrawideband radar sources are in the microwave regime, which correspond to voltage pulse risetimes less than a nanosecond. Some new sources, including the Phillips Laboratory Hindenberg series of hydrogen gas switched pulsers use hydrogen at hundreds of atmospheres of pressure in the switch. Unfortunately, the published data of electrical breakdown of gas and liquid media at these time lengths are relatively scarce. A study was conducted on the electrical breakdown properties of liquid and gas dielectrics at subnanosecond and nanoseconds. Two separate voltage sources with pulse risetimes less than 400 ps were developed. Diagnostic probes were designed and tested for their capability of detecting high voltage pulses at these fast risetimes. A thorough investigation into E-field strengths of liquid and gas dielectrics at breakdown times ranging from 0.4 to 5 ns was performed. The voltage polarity dependence on breakdown strength is observed. Streak camera images of streamer formation were taken. The effect of ultraviolet radiation, incident upon the gap, on statistical lag time was determined.

Plasma Actuators for Turbomachinery Flow Control

NASA Technical Reports Server (NTRS)

Miles, Richard, B; Shneider, Mikhail, N.

2012-01-01

This report is Part I of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. The period of performance was January 1, 2007 to December 31, 2010. This report includes the project summary, a list of publications and reprints of the publications that appeared in archival journals. Part II of the final report includes a Ph.D. dissertation and is published separately as NASA/CR-2012-2172655. The research performed under this project was focused on the operation of surface dielectric barrier discharge (DBD) devices driven by high voltage, nanosecond scale pulses plus constant or time varying bias voltages. The main interest was in momentum production and the range of voltages applied eliminated significant heating effects. The approach was experimental supplemented by computational modeling. All the experiments were conducted at Princeton University. The project provided comprehensive understanding of the associated physical phenomena. Limitations on the performance of the devices for the generation of high velocity surface jets were established and various means for overcoming those limitations were proposed and tested. The major limitations included the maximum velocity limit of the jet due to electrical breakdown in air and across the dielectric, the occurrence of backward breakdown during the short pulse causing reverse thrust, the buildup of surface charge in the dielectric offsetting the forward driving potential of the bias voltage, and the interaction of the surface jet with the surface through viscous losses. It was also noted that the best performance occurred when the nanosecond pulse and the bias voltage were of opposite sign. Solutions include the development of partially conducting surface coatings, the development of a semiconductor diode inlaid surface material to suppress the backward breakdown. Extension to long discharge channels was studied and a new ozone imaging method developed for more quantitative determination of surface jet properties.

Plasma chamber testing of advanced photovoltaic solar array coupons

NASA Technical Reports Server (NTRS)

Hillard, G. Barry

1994-01-01

The solar array module plasma interactions experiment is a space shuttle experiment designed to investigate and quantify the high voltage plasma interactions. One of the objectives of the experiment is to test the performance of the Advanced Photovoltaic Solar Array (APSA). The material properties of array blanket are also studied as electric insulators for APSA arrays in high voltage conditions. Three twelve cell prototype coupons of silicon cells were constructed and tested in a space simulation chamber.

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

NASA Astrophysics Data System (ADS)

Khound, Sagarika; Sarma, Ranjit

2018-01-01

We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

Performance of a 100V Half-Bridge MOSFET Driver, Type MIC4103, Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

The operation of a high frequency, high voltage MOSFET (metal-oxide semiconductor field-effect transistors) driver was investigated over a wide temperature regime that extended beyond its specified range. The Micrel MIC4103 is a 100V, non-inverting, dual driver that is designed to independently drive both high-side and low-side N-channel MOSFETs. It features fast propagation delay times and can drive 1000 pF load with 10ns rise times and 6 ns fall times [1]. The device consumes very little power, has supply under-voltage protection, and is rated for a -40 C to +125 C junction temperature range. The floating high-side driver of the chip can sustain boost voltages up to 100 V. Table I shows some of the device manufacturer s specification.

Dynamic performance of high speed solenoid valve with parallel coils

NASA Astrophysics Data System (ADS)

Kong, Xiaowu; Li, Shizhen

2014-07-01

The methods of improving the dynamic performance of high speed on/off solenoid valve include increasing the magnetic force of armature and the slew rate of coil current, decreasing the mass and stroke of moving parts. The increase of magnetic force usually leads to the decrease of current slew rate, which could increase the delay time of the dynamic response of solenoid valve. Using a high voltage to drive coil can solve this contradiction, but a high driving voltage can also lead to more cost and a decrease of safety and reliability. In this paper, a new scheme of parallel coils is investigated, in which the single coil of solenoid is replaced by parallel coils with same ampere turns. Based on the mathematic model of high speed solenoid valve, the theoretical formula for the delay time of solenoid valve is deduced. Both the theoretical analysis and the dynamic simulation show that the effect of dividing a single coil into N parallel sub-coils is close to that of driving the single coil with N times of the original driving voltage as far as the delay time of solenoid valve is concerned. A specific test bench is designed to measure the dynamic performance of high speed on/off solenoid valve. The experimental results also prove that both the delay time and switching time of the solenoid valves can be decreased greatly by adopting the parallel coil scheme. This research presents a simple and practical method to improve the dynamic performance of high speed on/off solenoid valve.

A DC Transformer

NASA Technical Reports Server (NTRS)

Youngquist, Robert C.; Ihlefeld, Curtis M.; Starr, Stanley O.

2013-01-01

A component level dc transformer is described in which no alternating currents or voltages are present. It operates by combining features of a homopolar motor and a homopolar generator, both de devices, such that the output voltage of a de power supply can be stepped up (or down) with a corresponding step down (or up) in current. The basic theory for this device is developed, performance predictions are made, and the results from a small prototype are presented. Based on demonstrated technology in the literature, this de transformer should be scalable to low megawatt levels, but it is more suited to high current than high voltage applications. Significant development would be required before it could achieve the kilovolt levels needed for de power transmission.

Ultraconcentrated Sodium Bis(fluorosulfonyl)imide-Based Electrolytes for High-Performance Sodium Metal Batteries.

PubMed

Lee, Jaegi; Lee, Yongwon; Lee, Jeongmin; Lee, Sang-Min; Choi, Jeong-Hee; Kim, Hyungsub; Kwon, Mi-Sook; Kang, Kisuk; Lee, Kyu Tae; Choi, Nam-Soon

2017-02-01

We present an ultraconcentrated electrolyte composed of 5 M sodium bis(fluorosulfonyl)imide in 1,2-dimethoxyethane for Na metal anodes coupled with high-voltage cathodes. Using this electrolyte, a very high Coulombic efficiency of 99.3% at the 120th cycle for Na plating/stripping is obtained in Na/stainless steel (SS) cells with highly reduced corrosivity toward Na metal and high oxidation durability (over 4.9 V versus Na/Na + ) without corrosion of the aluminum cathode current collector. Importantly, the use of this ultraconcentrated electrolyte results in substantially improved rate capability in Na/SS cells and excellent cycling performance in Na/Na symmetric cells without the increase of polarization. Moreover, this ultraconcentrated electrolyte exhibits good compatibility with high-voltage Na 4 Fe 3 (PO 4 ) 2 (P 2 O 7 ) and Na 0.7 (Fe 0.5 Mn 0.5 )O 2 cathodes charged to high voltages (>4.2 V versus Na/Na + ), resulting in outstanding cycling stability (high reversible capacity of 109 mAh g -1 over 300 cycles for the Na/Na 4 Fe 3 (PO 4 ) 2 (P 2 O 7 ) cell) compared with the conventional dilute electrolyte, 1 M NaPF 6 in ethylene carbonate/propylene carbonate (5/5, v/v).

Evaluation of high-voltage, high-power, solid-state remote power controllers for amps

NASA Technical Reports Server (NTRS)

Callis, Charles P.

1987-01-01

The Electrical Power Branch at Marshall Space Flight Center has a Power System Development Facility where various power circuit breadboards are tested and evaluated. This project relates to the evaluation of a particular remote power controller (RPC) energizing high power loads. The Facility equipment permits the thorough testing and evaluation of high-voltage, high-power solid-state remote power controllers. The purpose is to evaluate a Type E, 30 Ampere, 200 V dc remote power controller. Three phases of the RPC evaluation are presented. The RPC is evaluated within a low-voltage, low-power circuit to check its operational capability. The RPC is then evaluated while performing switch/circuit breaker functions within a 200 V dc, 30 Ampere power circuit. The final effort of the project relates to the recommended procedures for installing these RPC's into the existing Autonomously Managed Power System (AMPS) breadboard/test facility at MSFC.

Regulating Charge and Exciton Distribution in High-Performance Hybrid White Organic Light-Emitting Diodes with n-Type Interlayer Switch

NASA Astrophysics Data System (ADS)

Luo, Dongxiang; Yang, Yanfeng; Xiao, Ye; Zhao, Yu; Yang, Yibin; Liu, Baiquan

2017-10-01

The interlayer (IL) plays a vital role in hybrid white organic light-emitting diodes (WOLEDs); however, only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time, has been demonstrated to achieve a high efficiency, high color rendering index (CRI), and low voltage trade-off. The device exhibits a maximum total efficiency of 41.5 lm W-1, the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs (80-88) at practical luminances (≥1000 cd m-2) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V (>1 cd m-2), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs. [Figure not available: see fulltext.

Synthesis, Structure, and Electrochemical Performance of High Capacity Li 2Cu 0.5Ni 0.5O 2 Cathodes

DOE PAGES

Ruther, Rose E; Zhou, Hui; Dhital, Chetan; ...

2015-09-08

Orthorhombic Li 2NiO 2, Li 2CuO 2, and solid solutions thereof have been studied as potential cathode materials for lithium-ion batteries due to their high theoretical capacity and relatively low cost. While neither endmember shows good cycling stability, the intermediate composition, Li 2Cu 0.5Ni 0.5O 2, yields reasonably high reversible capacities. A new synthetic approach and detailed characterization of this phase and the parent Li 2CuO 2 are presented. The cycle life of Li 2Cu 0.5Ni 0.5O 2 is shown to depend critically on the voltage window. The formation of Cu 1+ at low voltage and oxygen evolution at highmore » voltage limit the electrochemical reversibility. In situ X-ray absorption spectroscopy (XAS), in situ Raman spectroscopy, and gas evolution measurements are used to follow the chemical and structural changes that occur as a function of cell voltage.« less

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film.

PubMed

Park, Jeongmin; Kang, Haeyong; Kang, Kyeong Tae; Yun, Yoojoo; Lee, Young Hee; Choi, Woo Seok; Suh, Dongseok

2016-03-09

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

NASA Astrophysics Data System (ADS)

Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

2017-03-01

The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

Maximizing fluid delivered by bubble-free electroosmotic pump with optimum pulse voltage waveform.

PubMed

Tawfik, Mena E; Diez, Francisco J

2017-03-01

In generating high electroosmotic (EO) flows for use in microfluidic pumps, a limiting factor is faradaic reactions that are more pronounced at high electric fields. These reactions lead to bubble generation at the electrodes and pump efficiency reduction. The onset of gas generation for high current density EO pumping depends on many parameters including applied voltage, working fluid, and pulse duration. The onset of gas generation can be delayed and optimized for maximum volume pumped in the minimum time possible. This has been achieved through the use of a novel numerical model that predicts the onset of gas generation during EO pumping using an optimized pulse voltage waveform. This method allows applying current densities higher than previously reported. Optimal pulse voltage waveforms are calculated based on the previous theories for different current densities and electrolyte molarity. The electroosmotic pump performance is investigated by experimentally measuring the fluid volume displaced and flow rate. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

PubMed

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

PubMed Central

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

High Voltage Magnesium-ion Battery Enabled by Nanocluster Mg3Bi2 Alloy Anode in Noncorrosive Electrolyte.

PubMed

Tan, Yi-Hong; Yao, Wei-Tang; Zhang, Tianwen; Ma, Tao; Lu, Lei-Lei; Zhou, Fei; Yao, Hong-Bin; Yu, Shu-Hong

2018-05-03

Currently, developing high voltage (beyond 2 V) rechargeable Mg-ion batteries still remains a great challenge owing to the limit of corrosive electrolyte and low compatibility of anode material. Here we report a facile one step solid state alloying route to synthesize nanoclustered Mg 3 Bi 2 alloy as a high-performance anode to build up a 2 V Mg-ion battery using noncorrosive electrolyte. The fabricated nanoclustered Mg 3 Bi 2 anode delivers a high reversible specific capacity (360 mAh g -1 ) with excellent stability (90.7% capacity retention over 200 cycles) and high Coulombic efficiency (average 98%) at 0.1 A g -1 . The good performance is attributed to the stable nanostructures, which effectively accommodate the reversible Mg 2+ ion insertion/deinsertion without losing electric contact among clusters. Significantly, the nanoclustered Mg 3 Bi 2 anode can be coupled with high voltage cathode Prussian Blue to assemble a full cell using noncorrosive electrolyte, showing a stable cycling (88% capacity retention over 200 cycles at 0.2 A g -1 ) and good rate capability (103 mAh g -1 at 0.1 A g -1 and 58 mAh g -1 at 2 A g -1 ). The energy and power density of the as-fabricated full cell can reach up to 81 Wh kg -1 and 2850 W kg -1 , respectively, which are both the highest values among the reported Mg-ion batteries using noncorrosive electrolytes. This study demonstrates a cost-effective route to fabricate stable and high voltage rechargeable Mg-ion battery potentially for grid-scale energy storage.

Review of Adult Electrical Burn Injury Outcomes Worldwide: An Analysis of Low-Voltage vs High-Voltage Electrical Injury.

PubMed

Shih, Jessica G; Shahrokhi, Shahriar; Jeschke, Marc G

The aims of this article are to review low-voltage vs high-voltage electrical burn complications in adults and to identify novel areas that are not recognized to improve outcomes. An extensive literature search on electrical burn injuries was performed using OVID MEDLINE, PubMed, and EMBASE databases from 1946 to 2015. Studies relating to outcomes of electrical injury in the adult population (≥18 years of age) were included in the study. Forty-one single-institution publications with a total of 5485 electrical injury patients were identified and included in the present study. Fourty-four percent of these patients were low-voltage injuries (LVIs), 38.3% high-voltage injuries (HVIs), and 43.7% with voltage not otherwise specified. Forty-four percentage of studies did not characterize outcomes according to LHIs vs HVIs. Reported outcomes include surgical, medical, posttraumatic, and others (long-term/psychological/rehabilitative), all of which report greater incidence rates in HVI than in LVI. Only two studies report on psychological outcomes such as posttraumatic stress disorder. Mortality rates from electrical injuries are 2.6% in LVI, 5.2% in HVI, and 3.7% in not otherwise specified. Coroner's reports revealed a ratio of 2.4:1 for deaths caused by LVI compared with HVI. HVIs lead to greater morbidity and mortality than LVIs. However, the results of the coroner's reports suggest that immediate mortality from LVI may be underestimated. Furthermore, on the basis of this analysis, we conclude that the majority of studies report electrical injury outcomes; however, the majority of them do not analyze complications by low vs high voltage and often lack long-term psychological and rehabilitation outcomes after electrical injury indicating that a variety of central aspects are not being evaluated or assessed.

Multimodal Examination of Atrial Fibrillation Substrate: Correlation of Left Atrial Bipolar Voltage Using Multi-Electrode Fast Automated Mapping, Point-by-Point Mapping, and Magnetic Resonance Image Intensity Ratio.

PubMed

Zghaib, Tarek; Keramati, Ali; Chrispin, Jonathan; Huang, Dong; Balouch, Muhammad A; Ciuffo, Luisa; Berger, Ronald D; Marine, Joseph E; Ashikaga, Hiroshi; Calkins, Hugh; Nazarian, Saman; Spragg, David D

2018-01-01

Bipolar voltage mapping, as part of atrial fibrillation (AF) ablation, is traditionally performed in a point-by-point (PBP) approach using single-tip ablation catheters. Alternative techniques for fibrosis-delineation include fast-anatomical mapping (FAM) with multi-electrode circular catheters, and late gadolinium-enhanced magnetic-resonance imaging (LGE-MRI). The correlation between PBP, FAM, and LGE-MRI fibrosis assessment is unknown. In this study, we examined AF substrate using different modalities (PBP, FAM, and LGE-MRI mapping) in patients presenting for an AF ablation. LGE-MRI was performed pre-ablation in 26 patients (73% males, age 63±8years). Local image-intensity ratio (IIR) was used to normalize myocardial intensities. PBP- and FAM-voltage maps were acquired, in sinus rhythm, prior to ablation and co-registered to LGE-MRI. Mean bipolar voltage for all 19,087 FAM voltage points was 0.88±1.27mV and average IIR was 1.08±0.18. In an adjusted mixed-effects model, each unit increase in local IIR was associated with 57% decrease in bipolar voltage (p<0.0001). IIR of >0.74 corresponded to bipolar voltage <0.5 mV. A total of 1554 PBP-mapping points were matched to the nearest FAM-point. In an adjusted mixed-effects model, log-FAM bipolar voltage was significantly associated with log-PBP bipolar voltage (ß=0.36, p<0.0001). At low-voltages, FAM-mapping distribution was shifted to the left compared to PBP-mapping; at intermediate voltages, FAM and PBP voltages were overlapping; and at high voltages, FAM exceeded PBP-voltages. LGE-MRI, FAM and PBP-mapping show good correlation in delineating electro-anatomical AF substrate. Each approach has fundamental technical characteristics, the awareness of which allows proper assessment of atrial fibrosis.

Investigation of a compact coaxially fed switched oscillator

NASA Astrophysics Data System (ADS)

Wang, Yuwei; Chen, Dongqun; Zhang, Jiande; Cao, Shengguang; Li, Da; Liu, Chebo

2013-09-01

To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ˜0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

PubMed

Xia, Wei; Peter, Christian; Weng, Junhui; Zhang, Jian; Kliem, Herbert; Jiang, Yulong; Zhu, Guodong

2017-04-05

Ferroelectric polymer based devices exhibit great potentials in low-cost and flexible electronics. To meet the requirements of both low voltage operation and low energy consumption, thickness of ferroelectric polymer films is usually required to be less than, for example, 100 nm. However, decrease of film thickness is also accompanied by the degradation of both crystallinity and ferroelectricity and also the increase of current leakage, which surely degrades device performance. Here we report one epitaxy method based on removable poly(tetrafluoroethylene) (PTFE) templates for high-quality fabrication of ordered ferroelectric polymer thin films. Experimental results indicate that such epitaxially grown ferroelectric polymer films exhibit well improved crystallinity, reduced current leakage and good resistance to electrical breakdown, implying their applications in high-performance and low voltage operated ferroelectric devices. On the basis of this removable PTFE template method, we fabricated organic semiconducting/ferroelectric blend resistive films which presented record electrical performance with operation voltage as low as 5 V and ON/OFF ratio up to 10 5 .

Novel High-Voltage, High-Power Piezoelectric Transformer Developed and Demonstrated for Space Communications Applications

NASA Technical Reports Server (NTRS)

Carazo, Alfredo V.; Wintucky, Edwin G.

2004-01-01

Improvements in individual piezoelectric transformer (PT) performance and the combination of these PTs in a unique modular topology under a Phase I contract with the NASA Glenn Research Center have enabled for the first time the simultaneous achievement of both high voltage and high power at much higher levels than previously obtained with any PT. Feasibility was demonstrated by a prototype transformer (called a Tap-Soner), which is shown in the preceding photograph as part of a direct-current to direct-current (dc-dc) converter having two outputs rated at 1.5 kV/5 W and 4.5 kV/20 W. The power density of 3.5 W/cm3 is significantly lower than for magnetic transformers with the same voltage and power output. This development, which is being done under a Small Business Innovation Research (SBIR) contract by Face Electronics, LC (Norfolk, VA), is based on improvements in the materials and design of Face's basic patented Transoner-T3 PT, shown in the left in the following figure. The T3 PT is most simply described as a resonant multilayer transducer where electrical energy at the input section is efficiently mechanically coupled to the output section, which then vibrates in a fundamental longitudinal mode to generate a high gain in voltage. The piezoelectric material used is a modified lead-zirconium-titanate-based ceramic. One of the significant improvements in PT design was the incorporation of a symmetrical double input layer, shown on the right in the following figure, which eliminated the lossy bending vibration modes characteristic of a single input layer. The performance of the improved PT was optimized to 1.5 kV/5 W. The next step was devising a way to combine the individual PTs in a modular circuit topology needed to achieve the desired high voltage and power output. Since the optimum performance of the individual PT occurs at resonance, the most efficient operation of the modular transformer was achieved by using a separate drive circuit for each PT. The output section consists of a separate output rectifier for each PT connected in series.

Route to genetically targeted optical electrophysiology: development and applications of voltage-sensitive fluorescent proteins

PubMed Central

Akemann, Walther; Song, Chenchen; Mutoh, Hiroki; Knöpfel, Thomas

2015-01-01

Abstract. The invention of membrane voltage protein indicators widens the reach of optical voltage imaging in cell physiology, most notably neurophysiology, by enabling membrane voltage recordings from genetically defined cell types in chronic and life-long preparations. While the last years have seen a dramatic improvement in the technical performance of these indicators, concomitant innovations in optogenetics, optical axon tracing, and high-speed digital microscopy are beginning to fulfill the age-old vision of an all-optical analysis of neuronal circuits, reaching beyond the limits of traditional electrode-based recordings. We will present our personal account of the development of protein voltage indicators from the pioneering days to the present state, including their applications in neurophysiology that has inspired our own work for more than a decade. PMID:26082930

The effects of magnetic field in plume region on the performance of multi-cusped field thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Peng, E-mail: hupengemail@126.com; Liu, Hui, E-mail: thruster@126.com; Yu, Daren

2015-10-15

The performance characteristics of a Multi-cusped Field Thruster depending on the magnetic field in the plume region were investigated. Five magnetic field shielding rings were separately mounted near the exit of discharge channel to decrease the strength of magnetic field in the plume region in different levels, while the magnetic field in the upstream was well maintained. The test results show that the electron current increases with the decrease of magnetic field strength in the plume region, which gives rise to higher propellant utilization and lower current utilization. On the other hand, the stronger magnetic field in the plume regionmore » improves the performance at low voltages (high current mode) while lower magnetic field improves the performance at high voltages (low current mode). This work can provide some optimal design ideas of the magnetic strength in the plume region to improve the performance of thruster.« less

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Ion extraction capabilities of two-grid accelerator systems. [for spacecraft propulsion

NASA Technical Reports Server (NTRS)

Rovang, D. C.; Wilbur, P. J.

1984-01-01

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. A large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current is presented. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high.

High Voltage LiNi 0.5 Mn 0.3 Co 0.2 O 2 /Graphite Cell Cycled at 4.6 V with a FEC/HFDEC-Based Electrolyte

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Meinan; Su, Chi-Cheung; Feng, Zhenxing

2017-04-26

A high voltage LiNi0.5Mn0.3Co0.2O2/graphite cell with a fluorinated electrolyte formulation 1.0 m LiPF6 fluoroethylene carbonate/bis(2,2,2-trifluoroethyl) carbonate is reported and its electrochemical performance is evaluated at cell voltage of 4.6 V. Comparing with its nonfluorinated electrolyte counterpart, the reported fluorinated one shows much improved Coulombic efficiency and capacity retention when a higher cut-off voltage (4.6 V) is applied. Scanning electron microscopy/energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy data clearly demonstrate the superior oxidative stability of the new electrolyte. The structural stability of the bulk cathode materials cycled with different electrolytes is extensively studied by X-ray absorption near edge structure andmore » X-ray diffraction.« less

Comparative analysis of cellulose pressboard and aramid paper used in air insulation systems of high-voltage devices

NASA Astrophysics Data System (ADS)

Turba, Tomasz; Frącz, Paweł

2017-10-01

The paper presents results of a comparative analysis of parameters of two kinds of solid dielectrics used in air insulation systems to prevent occurring partial discharges. The research works regarded materials made of: cellulose pressboard and aramid paper. All measurements were performed under laboratory conditions by changing the value of partial discharges generation voltage until breakdown occurred in the inhomogeneous environment that was simulated using needle-plate (made of copper) electrode system. The main contribution which resulted from studies is a statement that potential use of aramid paper as a dielectric can extend the life of a high voltage electric device as compared to standard cellulose pressboard usage due to higher electric resistances to breakdown or detection of corona voltage. Results shown that the aramid paper has greater electric resistance to breakdown in comparison to cellulose with no difference between both on detecting corona of partial discharge.

Microchip amplifier for in vitro, in vivo, and automated whole cell patch-clamp recording

PubMed Central

Kolb, Ilya; Kodandaramaiah, Suhasa B.; Chubykin, Alexander A.; Yang, Aimei; Bear, Mark F.; Boyden, Edward S.; Forest, Craig R.

2014-01-01

Patch clamping is a gold-standard electrophysiology technique that has the temporal resolution and signal-to-noise ratio capable of reporting single ion channel currents, as well as electrical activity of excitable single cells. Despite its usefulness and decades of development, the amplifiers required for patch clamping are expensive and bulky. This has limited the scalability and throughput of patch clamping for single-ion channel and single-cell analyses. In this work, we have developed a custom patch-clamp amplifier microchip that can be fabricated using standard commercial silicon processes capable of performing both voltage- and current-clamp measurements. A key innovation is the use of nonlinear feedback elements in the voltage-clamp amplifier circuit to convert measured currents into logarithmically encoded voltages, thereby eliminating the need for large high-valued resistors, a factor that has limited previous attempts at integration. Benchtop characterization of the chip shows low levels of current noise [1.1 pA root mean square (rms) over 5 kHz] during voltage-clamp measurements and low levels of voltage noise (8.2 μV rms over 10 kHz) during current-clamp measurements. We demonstrate the ability of the chip to perform both current- and voltage-clamp measurement in vitro in HEK293FT cells and cultured neurons. We also demonstrate its ability to perform in vivo recordings as part of a robotic patch-clamping system. The performance of the patch-clamp amplifier microchip compares favorably with much larger commercial instrumentation, enabling benchtop commoditization, miniaturization, and scalable patch-clamp instrumentation. PMID:25429119

The Impact of Harness Impedance on Hall Thruster Discharge Oscillations

NASA Technical Reports Server (NTRS)

Pinero, Luis R.

2017-01-01

Hall thrusters exhibit characteristic discharge voltage and current oscillations during steady-state operation. The lower frequency breathing-mode current oscillations are inherent to each thruster and could impact thruster operation and power processing unit (PPU) design. The design of the discharge output filter, in particular, the output capacitor is important because it supplies the high peak current oscillations that the thruster demands. However, space-rated, high-voltage capacitors are not readily available and can have significant mass and volume. So, it is important for a PPU designer to know what is the minimum amount of capacitance required to operate a thruster. Through Simulation Program with Integrated Circuit Emphasis modeling and electrical measurements on the Hall Effect Rocket with Magnetic Shielding thruster, it was shown that the harness impedance between the power supply and the thruster is the main contributor towards generating voltage ripple at the thruster. Also, increasing the size of the discharge filter capacitor, as previously implemented during thruster tests, does not reduce the voltage oscillations. The electrical characteristics of the electrical harness between the discharge supply and the thruster is crucial to system performance and could have a negative impact on performance, life and operation.

A multi-dielectric-layered triboelectric nanogenerator as energized by corona discharge.

PubMed

Shao, Jia Jia; Tang, Wei; Jiang, Tao; Chen, Xiang Yu; Xu, Liang; Chen, Bao Dong; Zhou, Tao; Deng, Chao Ran; Wang, Zhong Lin

2017-07-13

Triboelectric nanogenerators (TENGs) have been invented recently for meeting the power requirements of small electronics and potentially solving the worldwide energy crisis. Here, we developed a vertical contact-separation mode TENG based on a novel multi-dielectric-layered (MDL) structure, which was comprised of parylene C, polyimide and SiO 2 films. By using the corona discharge approach, the surface charge density was enhanced to as high as 283 μC m -2 , and especially the open-circuit voltage could be increased by a factor of 55 compared with the original value. Furthermore, the theoretical models were built to reveal the output characteristics and store the electrostatic energy of the TENG. The influences of the structural parameters and operation conditions including the effective dielectric thickness, dielectric constant, gap distance and air breakdown voltage were investigated systematically. It was found that the output performances such as the peak voltage and power density are approximately proportional to the thickness of the MDL film, but they would be restricted by the air breakdown voltage. These unique structures and models could be used to deepen the understanding of the fundamental mechanism of TENGs, and serve as an important guide for designing high performance TENGs.

The Impact of Harness Impedance on Hall Thruster Discharge Oscillations

NASA Technical Reports Server (NTRS)

Pinero, Luis R.

2017-01-01

Hall thrusters exhibit characteristic discharge voltage and current oscillations during steady-state operation. The lower frequency breathing-mode current oscillations are inherent to each thruster and could impact thruster operation and PPU design. The design of the discharge output filter, in particular, the output capacitor is important because it supplies the high peak current oscillations that the thruster demands. However, space-rated, high-voltage capacitors are not readily available and can have significant mass and volume. So, it is important for a PPU designer to know what is the minimum amount of capacitance required to operate a thruster. Through SPICE modeling and electrical measurements on the Hall Effect Rocket with Magnetic Shielding (HERMeS) thruster, it was shown that the harness impedance between the power supply and the thruster is the main contributor towards generating voltage ripple at the thruster. Also, increasing the size of the discharge filter capacitor, as previously implemented during thruster tests, does not reduce the voltage oscillations. The electrical characteristics of the electrical harness between the discharge supply and the thruster is crucial to system performance and could have a negative impact on performance, life and operation.

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

PubMed

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of the magnetic field profile on ITER conductor testing

NASA Astrophysics Data System (ADS)

Nijhuis, A.; Ilyin, Y.; ten Kate, H. H. J.

2006-08-01

We performed simulations with the numerical CUDI-CICC code on a typical short ITER (International Thermonuclear Experimental Reactor) conductor test sample of dual leg configuration, as usually tested in the SULTAN test facility, and made a comparison with the new EFDA-Dipole test facility offering a larger applied DC field region. The new EFDA-Dipole test facility, designed for short sample testing of conductors for ITER, has a homogeneous high field region of 1.2 m, while in the SULTAN facility this region is three times shorter. The inevitable non-uniformity of the current distribution in the cable, introduced by the joints at both ends, has a degrading effect on voltage-current (VI) and voltage-temperature (VT) characteristics, particularly for these short samples. This can easily result in an underestimation or overestimation of the actual conductor performance. A longer applied DC high field region along a conductor suppresses the current non-uniformity by increasing the overall longitudinal cable electric field when reaching the current sharing mode. The numerical interpretation study presented here gives a quantitative analysis for a relevant practical case of a test of a short sample poloidal field coil insert (PFCI) conductor in SULTAN. The simulation includes the results of current distribution analysis from self-field measurements with Hall sensor arrays, current sharing measurements and inter-petal resistance measurements. The outcome of the simulations confirms that the current uniformity improves with a longer high field region but the 'measured' VI transition is barely affected, though the local peak voltages become somewhat suppressed. It appears that the location of the high field region and voltage taps has practically no influence on the VI curve as long as the transverse voltage components are adequately cancelled. In particular, for a thin conduit wall, the voltage taps should be connected to the conduit in the form of an (open) azimuthally soldered wire, averaging the transverse conduit surface potentials initiated in the joints.

Design, Control, and Modeling of a New Voltage Source Converter for HVDC System

NASA Astrophysics Data System (ADS)

Mohan, Madhan; Singh, Bhim; Ketan Panigrahi, Bijaya

2013-05-01

Abstract: A New Voltage Source Converter (VSC) based on neutral clamped three-level circuit is proposed for High Voltage DC (HVDC) system. The proposed VSC is designed in a multipulse configuration. The converter is operated by Fundamental Frequency Switching (FFS). A new control method is developed for achieving all the necessary control aspects of HVDC system such as independent real and reactive power control, bidirectional real and reactive power control. The basic of the control method is varying the pulse width and by keeping the dc link voltage constant. The steady state and dynamic performances of HVDC system interconnecting two different frequencies network are demonstrated for active and reactive power control. Total number of transformers used in this system are reduced to half in comparison with the two-level VSCs for both active and reactive power control. The performance of the HVDC system is improved in terms of reduced harmonics level even at fundamental frequency switching. The harmonic performance of the designed converter is also studied for different value of the dead angle (β), and the optimized range of the dead angle is achieved for varying reactive power requirement. Simulation results are presented for the designed three level multipulse voltage source converters with the proposed control algorithm.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Automated qualification and analysis of protective spark gaps for DC accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Srutarshi; Rajan, Rehim N.; Dewangan, S.

2014-07-01

Protective spark gaps are used in the high voltage multiplier column of a 3 MeV DC Accelerator to prevent excessive voltage build-ups. Precise gap of 5 mm is maintained between the electrodes in these spark gaps for obtaining 120 kV± 5 kV in 6 kg/cm{sup 2} SF{sub 6} environment which is the dielectric medium. There are 74 such spark gaps used in the multiplier. Each spark gap has to be qualified for electrical performance before fitting in the accelerator to ensure reliable operation. As the breakdown voltage stabilizes after a large number of sparks between the electrodes, the qualification processmore » becomes time consuming and cumbersome. For qualifying large number of spark gaps an automatic breakdown analysis setup has been developed. This setup operates in air, a dielectric medium. The setup consists of a flyback topology based high voltage power supply with maximum rating of 25 kV. This setup works in conjunction with spark detection and automated shutdown circuit. The breakdown voltage is sensed using a peak detector circuit. The voltage breakdown data is recorded and statistical distribution of the breakdown voltage has been analyzed. This paper describes details of the diagnostics and the spark gap qualification process based on the experimental data. (author)« less

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

NASA Astrophysics Data System (ADS)

Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

2006-07-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

High voltage stability of LiCoO2 particles with a nano-scale Lipon coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yoongu; Veith, Gabriel M; Nanda, Jagjit

2011-01-01

For high-voltage cycling of rechargeable Li batteries, a nano-scale amorphous Li-ion conductor, lithium phosphorus oxynitride (Lipon), has been coated on surfaces of LiCoO{sub 2} particles by combining a RF-magnetron sputtering technique and mechanical agitation of LiCoO{sub 2} powders. LiCoO{sub 2} particles coated with 0.36 wt% ({approx}1 nm thick) of the amorphous Lipon, retain 90% of their original capacity compared to non-coated cathode materials that retain only 65% of their original capacity after more than 40 cycles in the 3.0-4.4 V range with a standard carbonate electrolyte. The reason for the better high-voltage cycling behavior is attributed to reduction in themore » side reactions that cause increase of the cell resistance during cycling. Further, Lipon coated particles are not damaged, whereas uncoated particles are badly cracked after cycling. Extending the charge of Lipon-coated LiCoO{sub 2} to higher voltage enhances the specific capacity, but more importantly the Lipon-coated material is also more stable and tolerant of high voltage excursions. A drawback of Lipon coating, particularly as thicker films are applied to cathode powders, is the increased electronic resistance that reduces the power performance.« less

Low-voltage-operated organic one-time programmable memory using printed organic thin-film transistors and antifuse capacitors.

PubMed

Jung, Soon-Won; Na, Bock Soon; Park, Chan Woo; Koo, Jae Bon

2014-11-01

We demonstrate an organic one-time programmable memory cell formed entirely at plastic-compatible temperatures. All the processes are performed at below 130 degrees C. Our memory cell consists of a printed organic transistor and an organic capacitor. Inkjet-printed organic transistors are fabricated by using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) for low-voltage operation. P(NDI2OD-T2) transistors have a high field-effect mobility of 0.2 cm2/Vs and a low operation gate voltage of less than 10 V. The operation voltage effectively decreases owing to the high permittivity of the P(VDF-TrFE):PMMA blended film. The data in the memory cell are programmed by electrically breaking the organic capacitor. The organic capacitor acts like an antifuse capacitor, because it is initially open, and it becomes permanently short-circuited by applying a high voltage. The organic memory cells are programmed with 4 V, and they are read out with 2 V. The memory data are read out by sensing the current in the memory cell. The printed organic one-time programmable memory is suitable for applications storing small amount of data, such as low-cost radio-frequency identification (RFID) tag.

The Type-2 Fuzzy Logic Controller-Based Maximum Power Point Tracking Algorithm and the Quadratic Boost Converter for Pv System

NASA Astrophysics Data System (ADS)

Altin, Necmi

2018-05-01

An interval type-2 fuzzy logic controller-based maximum power point tracking algorithm and direct current-direct current (DC-DC) converter topology are proposed for photovoltaic (PV) systems. The proposed maximum power point tracking algorithm is designed based on an interval type-2 fuzzy logic controller that has an ability to handle uncertainties. The change in PV power and the change in PV voltage are determined as inputs of the proposed controller, while the change in duty cycle is determined as the output of the controller. Seven interval type-2 fuzzy sets are determined and used as membership functions for input and output variables. The quadratic boost converter provides high voltage step-up ability without any reduction in performance and stability of the system. The performance of the proposed system is validated through MATLAB/Simulink simulations. It is seen that the proposed system provides high maximum power point tracking speed and accuracy even for fast changing atmospheric conditions and high voltage step-up requirements.

Stable, fast and high-energy-density LiCoO2 cathode at high operation voltage enabled by glassy B2O3 modification

NASA Astrophysics Data System (ADS)

Zhou, Aijun; Wang, Weihang; Liu, Qin; Wang, Yi; Yao, Xu; Qing, Fangzhu; Li, Enzhu; Yang, Tingting; Zhang, Long; Li, Jingze

2017-09-01

In this work, commercial LiCoO2 is modified with a glassy B2O3 by solution mixing with H3BO3 followed by post-calcination in order to enhance its high-voltage electrochemical performance. The glassy B2O3 coating/additive is believed to serve as an effective physiochemical buffer and protection between LiCoO2 and liquid electrolyte, which can suppress the high-voltage induced electrolyte decomposition and active material dissolution. During the early cycling and due to the electrochemical force, the as-coated B2O3 glasses which have 3D open frameworks tend to accommodate some mobile Li+ and form a more chemically-resistant and ion-conductive lithium boron oxide (LBO) interphase as a major component of the solid electrolyte interphase (SEI), which consequently enables much easier Li+ diffusion/transfer at the solid-liquid interfaces upon further cycling. Due to the synergetic effects of B2O3 coating/modification, the high-voltage capacity and energy density of the B2O3-modified LiCoO2 cathode are promisingly improved by 35% and 30% after 100 cycles at 1 C within 3.0-4.5 V vs. Li/Li+. Meanwhile, the high-rate performance of the B2O3-modified electrode is even more greatly improved, showing a capacity of 105 mAh g-1 at 10 C while the bare electrode has dropped to no more than 30 mAh g-1 under this rate condition.

Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

DOE PAGES

Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; ...

2015-03-02

Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

Investigation of the Effects of Cathode Flow Fraction and Position on the Performance and Operation of the High Voltage Hall Accelerator

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Huang, Wensheng; Haag, Thomas

2014-01-01

The National Aeronautics and Space Administration (NASA) Science Mission Directorate In- Space Propulsion Technology office is sponsoring NASA Glenn Research Center (GRC) to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. Tests were performed within NASA GRC Vacuum Facility 5 at background pressure levels that were six times lower than what has previously been attained in other vacuum facilities. A study was conducted to assess the impact of varying the cathode-to-anode flow fraction and cathode position on the performance and operational characteristics of the High Voltage Hall Accelerator (HiVHAc) thruster. In addition, the impact of injecting additional xenon propellant in the vicinity of the cathode was also assessed. Cathode-to-anode flow fraction sensitivity tests were performed for power levels between 1.0 and 3.9 kW. It was found that varying the cathode flow fraction from 5 to approximately 10% of the anode flow resulted in the cathode-to-ground voltage becoming more positive. For an operating condition of 3.8 kW and 500 V, varying the cathode position from a distance of closest approach to 600 mm away did not result in any substantial variation in thrust but resulted in the cathode-to-ground changing from -17 to -4 V. The change in the cathode-to-ground voltage along with visual observations indicated a change in how the cathode plume was coupling to the thruster discharge. Finally, the injection of secondary xenon flow in the vicinity of the cathode had an impact similar to increasing the cathode-to-anode flow fraction, where the cathode-to-ground voltage became more positive and discharge current and thrust increased slightly. Future tests of the HiVHAc thruster are planned with a centrally mounted cathode in order to further assess the impact of cathode position on thruster performance.

A high-performance supercapacitor electrode based on N-doped porous graphene

NASA Astrophysics Data System (ADS)

Dai, Shuge; Liu, Zhen; Zhao, Bote; Zeng, Jianhuang; Hu, Hao; Zhang, Qiaobao; Chen, Dongchang; Qu, Chong; Dang, Dai; Liu, Meilin

2018-05-01

The development of high-performance supercapacitors (SCs) often faces some contradictory and competing requirements such as excellent rate capability, long cycling life, and high energy density. One effective strategy is to explore electrode materials of high capacitance, electrode architectures of fast charge and mass transfer, and electrolytes of wide voltage window. Here we report a facile and readily scalable strategy to produce high-performance N-doped graphene with a high specific capacitance (∼390 F g-1). A symmetric SC device with a wide voltage window of 3.5 V is also successfully fabricated based on the N-doped graphene electrode. More importantly, the as-assembled symmetric SC delivers a high energy density of 55 Wh kg-1 at a power density of 1800 W kg-1 while maintaining superior cycling life (retaining 96.6% of the initial capacitance after 20,000 cycles). Even at a power density as high as 8800 W kg-1, it still retains an energy density of 29 Wh kg-1, higher than those of previously reported graphene-based symmetric SCs.

Understanding capacity fade in silicon based electrodes for lithium-ion batteries using three electrode cells and upper cut-off voltage studies

NASA Astrophysics Data System (ADS)

Beattie, Shane D.; Loveridge, M. J.; Lain, Michael J.; Ferrari, Stefania; Polzin, Bryant J.; Bhagat, Rohit; Dashwood, Richard

2016-01-01

Commercial Li-ion batteries are typically cycled between 3.0 and 4.2 V. These voltages limits are chosen based on the characteristics of the cathode (e.g. lithium cobalt oxide) and anode (e.g. graphite). When alternative anode/cathode chemistries are studied the same cut-off voltages are often, mistakenly, used. Silicon (Si) based anodes are widely studied as a high capacity alternative to graphite for Lithium-ion batteries. When silicon-based anodes are paired with high capacity cathodes (e.g. Lithium Nickel Cobalt Aluminium Oxide; NCA) the cell typically suffers from rapid capacity fade. The purpose of this communication is to understand how the choice of upper cut-off voltage affects cell performance in Si/NCA cells. A careful study of three-electrode cell data will show that capacity fade in Si/NCA cells is due to an ever-evolving silicon voltage profile that pushes the upper voltage at the cathode to >4.4 V (vs. Li/Li+). This behaviour initially improves cycle efficiency, due to liberation of new lithium, but ultimately reduces cycling efficiency, resulting in rapid capacity fade.

Initial performance results for high-aspect ratio gold MEMS deformable mirrors

NASA Astrophysics Data System (ADS)

Fernández, Bautista; Kubby, Joel

2009-02-01

The fabrication and initial performance results of high-aspect ratio 3-dimensional Micro-Electro-Mechanical System (MEMS) Deformable Mirrors (DM) for Adaptive Optics (AO) will be discussed. The DM systems were fabricated out of gold, and consist of actuators bonded to a continuous face sheet, with different boundary conditions. DM mirror displacements vs. voltage have been measured with a white light interferometer and the corresponding results compared to Finite Element Analysis (FEA) simulations. Interferometer scans of a DM have shown that ~9.4um of stroke can be achieved with low voltage, thus showing that this fabrication process holds promise in the manufacturing of future MEMS DM's for the next generation of extremely large telescopes.

SEMICONDUCTOR INTEGRATED CIRCUITS: A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

NASA Astrophysics Data System (ADS)

Jizhi, Liu; Xingbi, Chen

2009-12-01

A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

Radiation damage in high voltage silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H., Jr.; Swartz, C. K.; Weizer, V. G.

1980-01-01

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

High Energy Density Li-ion Cells for EV’s Based on Novel, High Voltage Cathode Material Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kepler, Keith D.; Slater, Michael

This Li-ion cell technology development project had three objectives: to develop advanced electrode materials and cell components to enable stable high-voltage operation; to design and demonstrate a Li-ion cell using these materials that meets the PHEV40 performance targets; and to design and demonstrate a Li-ion cell using these materials that meets the EV performance targets. The major challenge to creating stable high energy cells with long cycle life is system integration. Although materials that can give high energy cells are known, stabilizing them towards long-term cycling in the presence of other novel cell components is a major challenge. The majormore » technical barriers addressed by this work include low cathode specific energy, poor electrolyte stability during high voltage operation, and insufficient capacity retention during deep discharge for Si-containing anodes. Through the course of this project, Farasis was able to improve capacity retention of NCM materials for 4.4+ V operation, through both surface treatment and bulk-doping approaches. Other material advances include increased rate capability and of HE-NCM materials through novel synthesis approach, doubling the relative capacity at 1C over materials synthesized using standard methods. Silicon active materials proved challenging throughout the project and ultimately were the limiting factor in the energy density vs. cycle life trade off. By avoiding silicon anodes for the lower energy PHEV design, we manufactured cells with intermediate energy density and long cycle life under high voltage operation for PHEV applications. Cells with high energy density for EV applications were manufactured targeting a 300 Wh/kg design and were able to achieve > 200 cycles.« less

High performance asymmetric supercapacitor based on polypyrrole/graphene composite and its derived nitrogen-doped carbon nano-sheets

NASA Astrophysics Data System (ADS)

Zhu, Jianbo; Feng, Tianyu; Du, Xianfeng; Wang, Jingping; Hu, Jun; Wei, LiPing

2017-04-01

Neutral aqueous medium is a promising electrolyte for supercapacitors because it is low-cost, environmental-friendly and can achieve rapid charging/discharging with high power density. However, the energy density of such supercapacitor is significantly limited by its narrow operational voltage window. Herein, we demonstrated an effective approach to broaden the operational voltage window by fabricating an asymmetric supercapacitor (ASC) with polypyrrole/reduced graphene oxide (PPy/rGO) composite and its derived Nitrogen-doped carbon nano-sheets (NCs) as positive and negative electrode material, respectively. The homogeneous nano-sheet and mesoporous structure of PPy/rGO and NCs can facilitate rapid charge/ion migration and provide more active sites for ions adsorption/exchange to improve their electrochemical performance. Benefiting from high capacitance and good rate performance of PPy/rGO and NCs electrodes, the as-fabricated ASCs devices in a polyvinyl alcohol/LiCl gel electrolyte can realize a wide operational voltage of 1.6 V and deliver high energy density of 15.8 wh kg-1 (1.01 mWh cm-3) at 0.14 kW kg-1 (19.3 mW cm-3), which still remains 9.5 wh kg-1as power density increases to 6.56 kW kg-1, as well as excellent long-term cycling stability with about 88.7% capacitance retention after 10000 cycles. The remarkable performances suggest that the ASCs devices are promising for future energy storage applications.

Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

NASA Astrophysics Data System (ADS)

Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

2017-09-01

Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive

NASA Astrophysics Data System (ADS)

Miyaji, Kousuke; Yajima, Ryoji; Hatanaka, Teruyoshi; Takahashi, Mitsue; Sakai, Shigeki; Takeuchi, Ken

Initialize and weak-program erasing scheme is proposed to achieve high-performance and high-reliability Ferroelectric (Fe-) NAND flash solid-state drive (SSD). Bit-by-bit erase VTH control is achieved by the proposed erasing scheme and history effects in Fe-NAND is also suppressed. History effects change the future erase VTH shift characteristics by the past program voltage. The proposed erasing scheme decreases VTH shift variation due to history effects from ±40% to ±2% and the erase VTH distribution width is reduced from over 0.4V to 0.045V. As a result, the read and VPASS disturbance decrease by 42% and 37%, respectively. The proposed erasing scheme is immune to VTH variations and voltage stress. The proposed erasing scheme also suppresses the power and bandwidth degradation of SSD.

30 CFR 75.826 - High-voltage trailing cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables. 75.826 Section 75...-Voltage Longwalls § 75.826 High-voltage trailing cables. High-voltage trailing cables must: (a) Meet existing trailing cable requirements and the approval requirements of the high-voltage continuous mining...

Studies on the Effects of High Renewable Penetrations on Driving Point Impedance and Voltage Regulator Performance: National Renewable Energy Laboratory/Sacramento Municipal Utility District Load Tap Changer Driving Point Impedance Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagarajan, Adarsh; Coddington, Michael H.; Brown, David

Voltage regulators perform as desired when regulating from the source to the load and when regulating from a strong source (utility) to a weak source (distributed generation). (See the glossary for definitions of a strong source and weak source.) Even when the control is provisioned for reverse operation, it has been observed that tap-changing voltage regulators do not perform as desired in reverse when attempting regulation from the weak source to the strong source. The region of performance that is not as well understood is the regulation between sources that are approaching equal strength. As part of this study, wemore » explored all three scenarios: regulator control from a strong source to a weak source (classic case), control from a weak source to a strong source (during reverse power flow), and control between equivalent sources.« less

Temperature-dependent performance of all-NbN DC-SQUID magnetometers

NASA Astrophysics Data System (ADS)

Liu, Quansheng; Wang, Huiwu; Zhang, Qiyu; Wang, Hai; Peng, Wei; Wang, Zhen

2017-05-01

Integrated NbN direct current superconducting quantum interference device (DC-SQUID) magnetometers were developed based on high-quality epitaxial NbN/AlN/NbN Josephson junctions for SQUID applications operating at high temperatures. We report the current-voltage and voltage-flux characteristics and the noise performance of the NbN DC-SQUIDs for temperatures ranging from 4.2 to 9 K. The critical current and voltage swing of the DC-SQUIDs decreased by 15% and 25%, respectively, as the temperature was increased from 4.2 to 9 K. The white flux noise of the DC-SQUID magnetometer at 1 kHz increased from 3.9 μΦ0/Hz1/2 at 4.2 K to 4.8 μΦ0/Hz1/2 at 9 K with 23% increase, corresponding to the magnetic field noise of 6.6 and 8.1 fT/Hz1/2, respectively. The results show that NbN DC-SQUIDs improve the tolerance of the operating temperatures and temperature fluctuations in SQUID applications.

Electronic voltage and current transformers testing device.

PubMed

Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

2012-01-01

A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

Factors influencing high voltage performance of coconut char derived carbon based electrical double layer capacitor made using acetonitrile and propylene carbonate based electrolytes

NASA Astrophysics Data System (ADS)

Hu, Changzheng; Qu, Weiguo; Rajagopalan, Ramakrishnan; Randall, Clive

2014-12-01

Symmetric EDLCs made using high purity carbon electrodes derived from coconut char were tested using 1 M Tetraethylammonium hexafluorophosphate dissolved in two different solvents namely acetonitrile and propylene carbonate. The cell voltage of the capacitor made using propylene carbonate can be extended to 3.5 V and it exhibited good cycling and thermal stability upto 70 °C while the voltage was limited to below 3.0 V in acetonitrile. XPS analysis of the positive and negative electrodes of EDLCs post cycling showed that the primary degradation products were related to ring opening reactions in propylene carbonate based electrolytes while water played a key role in degradation of acetonitrile based EDLCs.

Nanostructured bilayer anodic TiO2/Al2O3 metal-insulator-metal capacitor.

PubMed

Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

2013-10-01

This paper presents the fabrication of high performance bilayer TiO2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/microm2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO2/Al2O3 and improvement of electrical properties.

The eGo grid model: An open source approach towards a model of German high and extra-high voltage power grids

NASA Astrophysics Data System (ADS)

Mueller, Ulf Philipp; Wienholt, Lukas; Kleinhans, David; Cussmann, Ilka; Bunke, Wolf-Dieter; Pleßmann, Guido; Wendiggensen, Jochen

2018-02-01

There are several power grid modelling approaches suitable for simulations in the field of power grid planning. The restrictive policies of grid operators, regulators and research institutes concerning their original data and models lead to an increased interest in open source approaches of grid models based on open data. By including all voltage levels between 60 kV (high voltage) and 380kV (extra high voltage), we dissolve the common distinction between transmission and distribution grid in energy system models and utilize a single, integrated model instead. An open data set for primarily Germany, which can be used for non-linear, linear and linear-optimal power flow methods, was developed. This data set consists of an electrically parameterised grid topology as well as allocated generation and demand characteristics for present and future scenarios at high spatial and temporal resolution. The usability of the grid model was demonstrated by the performance of exemplary power flow optimizations. Based on a marginal cost driven power plant dispatch, being subject to grid restrictions, congested power lines were identified. Continuous validation of the model is nescessary in order to reliably model storage and grid expansion in progressing research.

Low-voltage high-performance organic thin film transistors with a thermally annealed polystyrene/hafnium oxide dielectric

NASA Astrophysics Data System (ADS)

Wang, Ying; Acton, Orb; Ting, Guy; Weidner, Tobias; Ma, Hong; Castner, David G.; Jen, Alex K.-Y.

2009-12-01

Low-voltage pentacene-based organic thin film transistors (OTFTs) are demonstrated with polystyrene (PS)/hafnium oxide (HfOx) hybrid dielectrics. Thermal annealing of PS films on HfOx at 120 °C (PS-120) induces a flatter orientation of the phenyl groups (tilt angle 65°) at the surface compared to PS films without annealing (PS-RT) (tilt angle 31°). The flatter phenyl group orientation leads to better matching of surface energy between pentacene and PS. Pentacene deposited on PS-120 display higher quality thin films with larger grain sizes and higher crystallinity. Pentacene OTFTs with PS-120/HfOx hybrid dielectrics can operate at low-voltage (<3 V) with high field-effect mobilities (1 cm2/V s), high on/off current ratios (106), and low subthreshold slopes (100 mV/dec).

The detection of dissolved gases in transformer oil by gas chromatography with helium ionization detector

NASA Astrophysics Data System (ADS)

Deng, Xian-qin; Fang, Hua; Li, Min-xian

2017-07-01

The GC-PDD with the technology of valve cutting and helium ionization detector was used to analyze the dissolved gases in ultra-high voltage(UHV) and extra-high voltage(EHV) transformer oil. The detection limit(DL) reached ppb grade, especially for the featuring gas—C2H2 and H2, whose DL could reach 5ppb and 11ppb respectively. The test reproducibility of the instrument was about 1% and the correlation coefficient of standard curve-r is greater or equal to 0.99, which showed obvious advantage compared with normal GC. In addition, the auxiliary gas of H2 was not used in this instrument, which completely improved the safety performance. Thus, the application of GC-PDD has significant meaning in warning potential malfunction inside the ultra-high voltage transformer in advance.

Thiocyanates as attractive redox-active electrolytes for high-energy and environmentally-friendly electrochemical capacitors.

PubMed

Gorska, Barbara; Bujewska, Paulina; Fic, Krzysztof

2017-03-15

This manuscript reports on the novel insight into the development of high voltage carbon/carbon electrochemical capacitors operating in aqueous solutions of alkali metals and ammonium thiocyanates (KSCN, NaSCN, LiSCN, and NH 4 SCN). The effect of salt concentration, electrode porosity and current collectors on the capacitance value, system stability, and power performance has been investigated. Therefore, thiocyanate-based electrolytes were recognized as cheap and highly conductive electrolytic solutions (up to 401 mS cm -1 for NH 4 SCN at RT) allowing a cell voltage of 1.6 V in a symmetric carbon/carbon system to be achieved. At the same time, they display an attractive redox activity, enhancing the energy of the device with a good performance during cycling.

Method to improve reliability of a fuel cell system using low performance cell detection at low power operation

DOEpatents

Choi, Tayoung; Ganapathy, Sriram; Jung, Jaehak; Savage, David R.; Lakshmanan, Balasubramanian; Vecasey, Pamela M.

2013-04-16

A system and method for detecting a low performing cell in a fuel cell stack using measured cell voltages. The method includes determining that the fuel cell stack is running, the stack coolant temperature is above a certain temperature and the stack current density is within a relatively low power range. The method further includes calculating the average cell voltage, and determining whether the difference between the average cell voltage and the minimum cell voltage is greater than a predetermined threshold. If the difference between the average cell voltage and the minimum cell voltage is greater than the predetermined threshold and the minimum cell voltage is less than another predetermined threshold, then the method increments a low performing cell timer. A ratio of the low performing cell timer and a system run timer is calculated to identify a low performing cell.

Design and Testing of 100 mK High-voltage Electrodes for AEgIS

NASA Astrophysics Data System (ADS)

Derking, J. H.; Liberadzka, J.; Koettig, T.; Bremer, J.

The AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) experiment at CERN has as main goal to perform the first direct measurement of the Earth's gravitational acceleration on antihydrogen atoms within 1% precision. To reach this precision, the antihydrogen should be cooled down to about 100 mK to reduce its random vertical velocity. This is obtained by mounting a Penning trap consisting of multiple high-voltage electrodes on the mixing chamber of a dilution refrigerator with cooling capacity of 100 μW at 50 mK. A design of the high-voltage electrodes is made and experimentally tested at operating conditions. The high-voltage electrodes are made of sapphire with four gold sputtered electrode sectors on it. The electrodes have a width of 40 mm, a height of 18 mm and a thickness of 5.8 mm and for performance testing are mountedto the mixing chamber of a dilution refrigerator with a 250 μm thick indium foil sandwiched inbetween the two to increase the thermal contact. A static heat load of 120 nW applied to the top surface of the electrode results in a maximum measured temperature of 100 mK while the mixing chamber is kept at a constant temperature of 50 mK. The measured totalthermal resistivity lies in the range of 210-260 cm2 K4 W-1, which is much higher than expected from literature. Further research needs to be done to investigate this.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

NASA Technical Reports Server (NTRS)

Berning, D.

1981-01-01

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

NASA Astrophysics Data System (ADS)

Ma, Jun; Matioli, Elison

2018-01-01

This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

Field Performance of Photovoltaic Systems in the Tucson Desert

NASA Astrophysics Data System (ADS)

Orsburn, Sean; Brooks, Adria; Cormode, Daniel; Greenberg, James; Hardesty, Garrett; Lonij, Vincent; Salhab, Anas; St. Germaine, Tyler; Torres, Gabe; Cronin, Alexander

2011-10-01

At the Tucson Electric Power (TEP) solar test yard, over 20 different grid-connected photovoltaic (PV) systems are being tested. The goal at the TEP solar test yard is to measure and model real-world performance of PV systems and to benchmark new technologies such as holographic concentrators. By studying voltage and current produced by the PV systems as a function of incident irradiance, and module temperature, we can compare our measurements of field-performance (in a harsh desert environment) to manufacturer specifications (determined under laboratory conditions). In order to measure high-voltage and high-current signals, we designed and built reliable, accurate sensors that can handle extreme desert temperatures. We will present several benchmarks of sensors in a controlled environment, including shunt resistors and Hall-effect current sensors, to determine temperature drift and accuracy. Finally we will present preliminary field measurements of PV performance for several different PV technologies.

Performance improvements of the vertical, double-diffused power metal-oxide-silicon field-effect transistor

NASA Astrophysics Data System (ADS)

Zhu, Ronghua

An n-channel power vertical double-diffused metal-oxide-silicon field-effect transistor (VDMOSFET) with a new atomic-lattice-layout (ALL) has been designed and fabricated. The performance of the VDMOSFET with the ALL has been studied experimentally and comprehensively for the first time. The experimental results with the ALL are compared with the square (SQ), hexagonal (HEX) and stripe (STR) layouts for different applications. For high-frequency applications of VDMOSFET, the ALL is superior to the HEX and inferior to the STR. The optimum specific on-resistance and input capacitance product (Rsb{ON,SP} × Csb{iss,SP}) and optimum specific on-resistance and output capacitance product (Rsb{ON,SP} × Csb{oss,SP}) for the ALL are 44% and 36% lower than the HEX, and 10% and 13% higher than the STR, respectively. The ALL offers superior performance compared to the SQ for applications involving smart power feedback control using integrated current sensor. For a typical sense resistance of 100 Omega, the sense current drops 44% of its value at 0 Omega for the SQ, but only 11% for the ALL. For high-voltage and high-current applications, such as voltage-controlled current source, one observes that the ALL enters into quasi-saturation region at lower gate voltage (Vsb{G}). Typically, quasi-saturation occurs at Vsb{G} of 3V above the threshold voltage (Vsb{T}) for ALL, whereas this voltage is 5 and 6V for the STR and HEX, respectively. Minority carrier lifetime control by proton implantation has been successfully employed to improve the VDMOSFET built-in diode switching performance for the first time. A sevenfold reduction in reverse recovery charge has been achieved with a proton energy of 2.5 MeV and dose of 3 × 10sp{11}/cmsp2. The impact of proton implantation on diode forward voltage and the VDMOSFET characteristics, such as Vsb{T}, leakage current and on-resistance, has been found negligible. Proton implantation has also been found to significantly improve the device ruggedness. The peak reverse current of the built-in diode is reduced to 17.6 A for a proton energy of 1.5 MeV compared to 29.1 A for an un-implanted device at di/dt = 450 A/mus. The optimum location of the proton has been found at approximately middle of the epi-layer.

Low voltage to high voltage level shifter and related methods

NASA Technical Reports Server (NTRS)

Mentze, Erik J. (Inventor); Buck, Kevin M. (Inventor); Hess, Herbert L. (Inventor); Cox, David F. (Inventor)

2006-01-01

A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

Design and experimental study of a novel giant magnetostrictive actuator

NASA Astrophysics Data System (ADS)

Xue, Guangming; Zhang, Peilin; He, Zhongbo; Li, Dongwei; Huang, Yingjie; Xie, Wenqiang

2016-12-01

Giant magnetostrictive actuator has been widely used in precise driving occasions for its excellent performance. However, in driving a switching valve, especially the ball-valve in an electronic controlled injector, the actuator can't exhibit its good performance for limits in output displacement and responding speed. A novel giant magnetostrictive actuator, which can reach its maximum displacement for being exerted with no bias magnetic field, is designed in this paper. Simultaneously, elongating of the giant magetostrictive material is converted to shortening of the actuator's axial dimension with the help of an output rod in "T" type. Furthermore, to save responding time, the driving voltage with high opening voltage while low holding voltage is designed. Responding time and output displacement are studied experimentally with the help of a measuring system. From measured results, designed driving voltage can improve the responding speed of actuator displacement quite effectively. And, giant magnetostrictive actuator can output various steady-state displacements to reach more driving effects.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Lightweight IMM PV Flexible Blanket Assembly

NASA Technical Reports Server (NTRS)

Spence, Brian

2015-01-01

Deployable Space Systems (DSS) has developed an inverted metamorphic multijunction (IMM) photovoltaic (PV) integrated modular blanket assembly (IMBA) that can be rolled or z-folded. This IMM PV IMBA technology enables a revolutionary flexible PV blanket assembly that provides high specific power, exceptional stowed packaging efficiency, and high-voltage operation capability. DSS's technology also accommodates standard third-generation triple junction (ZTJ) PV device technologies to provide significantly improved performance over the current state of the art. This SBIR project demonstrated prototype, flight-like IMM PV IMBA panel assemblies specifically developed, designed, and optimized for NASA's high-voltage solar array missions.

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

PubMed

Lee, Hyungjin; Lee, Donghwa; Ahn, Yumi; Lee, Eun-Woo; Park, Lee Soon; Lee, Youngu

2014-08-07

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

Inductive voltage adder advanced hydrodynamic radiographic technology demonstration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, M.G.; Poukey, J.W.; Maenchen

This paper presents the design, results, and analysis of a high-brightness electron beam technology demonstration experiment completed at Sandia National Laboratories, performed in collaboration with Los Alamos National Laboratory. The anticipated electron beam parameters were: 12 MeV, 35-40 kA, 0.5-mm rms radius, and 40-ns full width half maximum (FWHM) pulse duration. This beam, on an optimum thickness tantalum converter, should produce a very intense x-ray source of {approximately} 1.5-mm spot size and 1 kR dose @ 1 m. The accelerator utilized was SABRE, a pulsed inductive voltage adder, and the electron source was a magnetically immersed foilless electron diode. Formore » these experiments, SABRE was modified to high-impedance negative-polarity operation. A new 100-ohm magnetically insulated transmission line cathode electrode was designed and constructed; the cavities were rotated 180{degrees} poloidally to invert the central electrode polarity to negative; and only one of the two pulse forming lines per cavity was energized. A twenty- to thirty-Tesla solenoidal magnet insulated the diode and contained the beam at its extremely small size. These experiments were designed to demonstrate high electron currents in submillimeter radius beams resulting in a high-brightness high-intensity flash x-ray source for high-resolution thick-object hydrodynamic radiography. The SABRE facility high-impedance performance was less than what was hoped. The modifications resulted in a lower amplitude (9 MV), narrower-than-anticipated triangular voltage pulse, which limited the dose to {approximately} 20% of the expected value. In addition, halo and ion-hose instabilities increased the electron beam spot size to > 1.5 mm. Subsequent, more detailed calculations explain these reduced output parameters. An accelerator designed (versus retrofit) for this purpose would provide the desired voltage and pulse shape.« less

Theoretical investigation of the use of nanocages with an adsorbed halogen atom as anode materials in metal-ion batteries.

PubMed

Razavi, Razieh; Abrishamifar, Seyyed Milad; Rajaei, Gholamreza Ebrahimzadeh; Kahkha, Mohammad Reza Rezaei; Najafi, Meysam

2018-02-21

The applicability of C 44 , B 22 N 22 , Ge 44 , and Al 22 P 22 nanocages, as well as variants of those nanocages with an adsorbed halogen atom, as high-performance anode materials in Li-ion, Na-ion, and K-ion batteries was investigated theoretically via density functional theory. The results obtained indicate that, among the nanocages with no adsorbed halogen atom, Al 22 P 22 would be the best candidate for a novel anode material for use in metal-ion batteries. Calculations also suggest that K-ion batteries which utilize these nanocages as anode materials would give better performance and would yield higher cell voltages than the corresponding Li-ion and Na-ion batteries with nanocage-based anodes. Also, the results for the nanocages with an adsorbed halogen atom imply that employing them as anode materials would lead to higher cell voltages and better metal-ion battery performance than if the nanocages with no adsorbed halogen atom were to be used as anode materials instead. Results further implied that nanocages with an adsorbed F atom would give higher cell voltages and better battery performance than nanocages with an adsorbed Cl or Br atom. We were ultimately able to conclude that a K-ion battery that utilized Al 21 P 22 with an adsorbed F atom as its anode material would afford the best metal-ion battery performance; we therefore propose this as a novel highly efficient metal-ion battery. Graphical abstract The results of a theoretical investigation indicated that Al 22 P 22 is a better candidate for a high-performance anode material in metal-ion batteries than Ge 44 is. Calculations also showed that K-ion batteries with nanocage-based anodes would produce higher cell voltages and perform better than the equivalent Li-ion and Na-ion batteries with nanocage-based anodes, and that anodes based on nanocages with an adsorbed F atom would perform better than anodes based on nanocages with an adsorbed Cl or Br atom.

Performance of Li-Ion Cells Under Battery Voltage Charge Control

NASA Technical Reports Server (NTRS)

Rao, Gopalakrishna M.; Vaidyanathan, Hari; Day, John H. (Technical Monitor)

2001-01-01

A study consisting of electrochemical characterization and Low-Earth-Orbit (LEO) cycling of Li-Ion cells from three vendors was initiated in 1999 to determine the cycling performance and to infuse the new technology in the future NASA missions. The 8-cell batteries included in this evaluation are prismatic cells manufactured by Mine Safety Appliances Company (MSA), cylindrical cells manufactured by SAFT and prismatic cells manufactured by Yardney Technical Products, Inc. (YTP). The three batteries were cycle tested in the LEO regime at 40% depth of discharge, and under a charge control technique that consists of battery voltage clamp with a current taper. The initial testing was conducted at 20 C; however, the batteries were cycled also intermittently at low temperatures. YTP 20 Ah cells consisted of mixed-oxide (Co and Ni) positive, graphitic carbon negative, LIPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 32 V. The low temperature cycling tests started after 4575 cycles at 20 C. The cells were not capable of cycling. at low temperature since the charge acceptance at battery level was poor. There was a cell in the battery that showed too high an end-of-charge (EOC) voltage thereby limiting the ability to charge the rest of the cells in the battery. The battery has completed 6714 cycles. SAFT 12 Ah cells consisted of mixed-oxide (Co and NO positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was for 30.8 V. The low temperature cycling tests started after 4594 cycles at 20 C. A cell that showed low end of discharge (EOD) and EOC voltages and three other cells that showed higher EOC voltages limited the charge acceptance at the selected voltage limit during charge. The cells were capable of cycling at 10 C and 0 C but the charge voltage limit had to be increased to 34.3 V (4.3 V per cell). The low temperature cycling may have induced poor chargeability since the voltage had to be increased to achieve the required charge input. The battery has completed 6226 cycles. MSA 10 Ah cells consisted of Co oxide positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 30.8 V. The low temperature cycling tests were started after 2182 cycles at 20 C. The cells were capable of cycling at 10 C and 0 C. Like SAFT, the voltage limit on charge had to be increased to 36 V (4.5 V per cell). There was a cell (cell S/N 13) in the battery that showed poor performance features such as low EOD voltage and high EOC voltage. The battery has completed 3441 cycles. A reconditioning procedure that consisted of C15 charge to a taper current of C/100 and C/20 discharge improved the voltage behavior of SAFT and MSA cells with no significant effect on YTP cells. We have demonstrated that the charge operation with VT clamp at battery rather than at cell level is feasible for onboard Li-Ion battery operation.

Safety Performance of Small Lithium-Ion Cells in High Voltage Batteries

NASA Technical Reports Server (NTRS)

Cowles, Philip R.; Darcy, Eric C.; Davies, Frank J.; Jeevarajan, Judith A.; Spurrett, Robert P.

2003-01-01

Topics covered include: Small-cell EAPU work done by NASA-JSC & COM DEV; Looking at safety features (short circuit protection - PTCs); Early tests showed that long strings do not withstand short circuit; a) Some PTCs experience large negative voltages; b) Destructive results. Solution: group cells into shorter substrings, with bypass diodes Work included: a) Tests with single cells shorted; b) Tests with single cells with imposed-negative voltages; c) 6s, 7s and 8s string shorts; and d) Tests with protection scheme in place, on 12s and 41s x 5p.

Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration.

PubMed

Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui

2012-01-30

We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

Electron refrigeration in hybrid structures with spin-split superconductors

NASA Astrophysics Data System (ADS)

Rouco, M.; Heikkilä, T. T.; Bergeret, F. S.

2018-01-01

Electron tunneling between superconductors and normal metals has been used for an efficient refrigeration of electrons in the latter. Such cooling is a nonlinear effect and usually requires a large voltage. Here we study the electron cooling in heterostructures based on superconductors with a spin-splitting field coupled to normal metals via spin-filtering barriers. The cooling power shows a linear term in the applied voltage. This improves the coefficient of performance of electron refrigeration in the normal metal by shifting its optimum cooling to lower voltage, and also allows for cooling the spin-split superconductor by reverting the sign of the voltage. We also show how tunnel coupling spin-split superconductors with regular ones allows for a highly efficient refrigeration of the latter.

Ultra High Voltage Propellant Isolators and Insulators for JIMO Ion Thrusters

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Gaier, James R.; Hung, Ching-Cheh; Walters, Patty A.; Sechkar, Ed; Panko, Scott; Kamiotis, Christina A.

2004-01-01

Within NASA's Project Prometheus, high specific impulse ion thrusters for electric propulsion of spacecraft for the proposed Jupiter Icy Moon Orbiter (JIMO) mission to three of Jupiter's moons: Callisto, Ganymede and Europa will require high voltage operation to meet mission propulsion. The anticipated approx.6,500 volt net ion energy will require electrical insulation and propellant isolation which must exceed that used successfully by the NASA Solar Electric Propulsion Technology Readiness (NSTAR) Deep Space 1 mission thruster by a factor of approx.6. Xenon propellant isolator prototypes that operate at near one atmosphere and prototypes that operate at low pressures (<100 Torr) have been designed and are being tested for suitability to the JIMO mission requirements. Propellant isolators must be durable to Paschen breakdown, sputter contamination, high temperature, and high voltage while operating for factors longer duration than for the Deep Space 1 Mission. Insulators used to mount the thrusters as well as those needed to support the ion optics have also been designed and are under evaluation. Isolator and insulator concepts, design issues, design guidelines, fabrication considerations and performance issues are presented. The objective of the investigation was to identify candidate isolators and insulators that are sufficiently robust to perform durably and reliably during the proposed JIMO mission.

Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

NASA Astrophysics Data System (ADS)

Su, Yaorong

Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces engineering on improving the electrical characteristics of OTFTs is of great technological importance. For the dielectric/semiconductor interface, an octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) is used to modify the surface of ATO (ODPA/ATO). For the electrode/semiconductor interface, a simple in-situ modified Cu (M-Cu) is employed as source-drain (S/D) electrodes in stead of commonly used Au. The electrical characteristics of pentacene TFT are drastically enhanced upon interfaces modification. Moreover, by encapsulating the M-Cu with a thin layer of Au (Au/ M-Cu), the device performance is further improved. The detailed mechanism is systematically explored. Finally, organic electronic devices on flexible plastic substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. One of the most critical issues in realization flexible OTFTs is the integration of gate dielectrics with flexible substrates. We have successfully incorporated the ODPA/ATO with Au coated flexible polyimide (PI) substrate. By using Au/M-Cu as S/D electrode, the flexible pentacene TFTs show outstanding electrical performance. In addition, the mechanical flexibility and reliability of the devices are studied in detail. Our approach demonstrates an effective way to realize low-cost, high-performance flexible OTFTs.

30 CFR 77.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... devices to provide protection against under voltage, grounded phase, short circuit and overcurrent. High... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High...

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Design and Analysis of Nano-Pulse Generator for Industrial Wastewater Application

NASA Astrophysics Data System (ADS)

Jang, Sung-Duck; Son, Yoon-Kyoo; Cho, Moo-Hyun; Norov, Enkhbat

2018-05-01

Recently, the application of a pulsed power system is being extended to environmental and industrial fields. The non-dissolution wastewater pollutants from industrial plants can be processed by applying high-voltage pulses with a fast rising time (a few nanoseconds) and short duration (nano to microseconds) in a pulsed corona discharge reactor. The high-voltage nano-pulse generator with a magnetic switch has been developed. It can be used for a spray type water treatment facility. Its corona current in load can be adjusted by pulse width and repetition rate. We investigated the performance of the nano-pulse generator by using the dummy load that is composed of resistor and capacitor equivalent to the actual reactor. In this paper, the results of design, construction and characterization of a high-voltage nano-pulse generator for an industrial wastewater treatment are reported. Consequently, a pulse width of 1.1 μs at the repetition rate of 200 pps, a peak voltage of 41 kV for the nano-pulse generator were achieved across a 640 Ω load. The simulation results on magnetic switch show reasonable agreement with experimental ones.

Development of the Fast Scintillation Detector with Programmable High Voltage Adjustment Suitable for Moessbauer Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prochazka, R.; Frydrych, J.; Pechousek, J.

2010-07-13

This work is focused on a development of a compact fast scintillation detector suitable for Moessbauer spectroscopy (low energy X-ray/{gamma}-ray detection) where high counting rates are inevitable. Optimization of this part was necessary for a reliable function, better time resolution and to avoid a detector pulses pile-up effect. The pile-up effect decreases the measurement performance, significantly depends on the source activity and also on the pulse duration. Our new detection unit includes a fast scintillation crystal YAP:Ce, an R6095 photomultiplier tube, a high voltage power supply socket C9028-01 assembly, an AD5252 digital potentiometer with an I2C interface and an AD8000more » ultra fast operation preamplifier. The main advantages of this solution lie in a short pulse duration (less than 200 ns), stable operation for high activities, programmable gain of the high voltage supply and compact design in the aluminum housing.« less

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

30 CFR 77.810 - High-voltage equipment; grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding. Frames, supporting structures, and enclosures of stationary, portable, or mobile high-voltage equipment shall be...

Development of high temperature gallium phosphide rectifiers

NASA Technical Reports Server (NTRS)

Craford, M. G.; Keune, D. L.

1972-01-01

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

High Voltage TAL Erosion Characterization

NASA Technical Reports Server (NTRS)

Jacobson, David T.

2003-01-01

Extended operation of a D-80 anode layer thruster at high voltage was investigated. The thruster was operated for 1200 hours at 700 Volts and 4 Amperes. Laser profilometry was employed to quantify the erosion of the thruster's graphite guard rings and electrodes at 0, 300, 600, 900, and 1200 hours. Thruster performance and electrical characteristics were monitored over the duration of the investigation. The guard rings exhibited asymmetric erosion that was greatest in the region of the cathode. Erosion of the guard rings exposed the magnet poles between 600 to 900 hours of operation.

Stress-Dependent Voltage Offsets From Polymer Insulators Used in Rock Mechanics and Material Testing

NASA Technical Reports Server (NTRS)

Carlson, G. G.; Dahlgren, Robert; Gray, Amber; Vanderbilt, V. C.; Freund, F.; Johnston, M. J.; Dunson, C.

2013-01-01

Dielectric insulators are used in a variety of laboratory settings when performing experiments in rock mechanics, petrology, and electromagnetic studies of rocks in the fields of geophysics,material science, and civil engineering. These components may be used to electrically isolate geological samples from the experimental equipment, to perform a mechanical compliance function between brittle samples and the loading equipment, to match ultrasonic transducers, or perform other functions. In manyexperimental configurations the insulators bear the full brunt of force applied to the sample but do not need to withstand high voltages, therefore the insulators are often thin sheets of mechanically tough polymers. From an instrument perspective, transduction from various types of mechanical perturbation has beenqualitatively compared for a number of polymers [1, 2] and these error sources are readily apparent duringhigh-impedance measurements if not mitigated. However even when following best practices, a force dependent voltage signal still remains and its behavior is explored in this presentation. In this experimenttwo thin sheets (0.25 mm) of high-density polyethylene (HDPE) were set up in a stack, held alternatelybetween three aluminum bars; this stack was placed on the platen of a 60T capacity hydraulic testingmachine. The surface area, A, over which the force is applied to the PE sheets in this sandwich is roughly 40 square cm, each sheet forming a parallel-plate capacitor having roughly 320 pF [3], assuming therelative dielectric permittivity of PE is approximately 2.3. The outer two aluminum bars were connected to the LO input ofthe electrometer and the central aluminum bar was connected to the HI input of a Keithley model 617 electrometer. Once the stack is mechanically well-seated with no air gaps, the voltage offset is observed tobe a linear function of the baseline voltage for a given change in applied force. For a periodically appliedforce of 66.7 kN the voltage offsets were measured as a function of initial voltage, and these data were fitwith a linear function that was constrained to pass through the origin. The best fit solution had a correlation coefficient of R=0.85 and a slope of approximately -0.0228 volts/volt. The voltage offset when normalizedis demonstrated to be constant -2.28% for both positive and negative polarities over nearly 3 orders ofbaseline voltage magnitude. From this, the voltage-force coefficient is derived to be -0.34 ppm/N. Thiscorrelates well to a first-order parallel plate capacitor model that assumes constant area, and smalldeformation such that the polymer may be mechanically modeled by a spring that obeys Hookes law. Thissimple model predicts that the coefficient of proportionality is a function of Youngs modulus E= 0.8 GPaand surface area of the insulator, theoretically -1EA= -0.31 ppm/N. The outcome of this work is animproved insulator made from ultra-high molecular weight (UHMW) polyethylene and other approachestoward the minimization of and compensation for these experimental artifacts.

Resonant-Type Smooth Impact Drive Mechanism Actuator Operating at Lower Input Voltages

NASA Astrophysics Data System (ADS)

Morita, Takeshi; Nishimura, Takuma; Yoshida, Ryuichi; Hosaka, Hiroshi

2013-07-01

We report on the design and fabrication of a resonant-type smooth impact drive mechanism (SIDM) actuator based on a multilayered piezoelectric ceramic transducer. Conventional SIDMs use off-resonant sawtooth-shaped displacement in developing stick-slip motion of a slider, but require large input voltages for high-speed operation. In contrast, in resonant-type SIDMs, a quasi-sawtooth-shaped displacement is obtained by combining two resonant vibrational modes. This driving principle enables low input voltage operations. In combining the modes, their frequency ratio must be 1:2. To design and optimize the stator transducer to generate sawtooth-shaped displacements, a transfer matrix method was adopted. With a preload of 270 mN, the no-load speed was 40 mm/s under a driving voltage of 1.6 V (peak to peak). This input voltage was one-sixth that of previous SIDMs for the same performance. Concurrently, heat generation was significantly reduced because dielectric losses were suppressed under the lower input voltage operation.

Na-ion batteries based on the inorganic BN nanocluster anodes: DFT studies.

PubMed

Nejati, K; Hosseinian, A; Bekhradnia, A; Vessally, E; Edjlali, L

2017-06-01

It has been recently indicated that the Li-ion batteries may be replaced by Na-ion batteries because of their low safety, high cost, and low-temperature performance, and lack of the Li mineral reserves. Here, using density functional theory calculations, we studied the potential application of B 12 N 12 nanoclusters as anode in Na-ion batteries. Our calculations indicate that the adsorption energy of Na + and Na are about -23.4 and -1.4kcal/mol, respectively, and the pristine BN cage to improve suffers from a low cell voltage (∼0.92V) as an anode in Na-ion batteries. We presented a strategy to increase the cell voltage and performance of Na-ion batteries. We showed that encapsulation of different halides (X=F - , Cl - , or Br - ) into BN cage significantly increases the cell voltage. By increasing the atomic number of X, the Gibbs free energy change of cell becomes more negative and the cell voltage is increased up to 3.93V. The results are discussed based on the structural, energetic, frontier molecular orbital, charge transfer and electronic properties and compared with the performance of other nanostructured anodes. Copyright © 2017 Elsevier Inc. All rights reserved.

Structure-property relationships in an Al matrix Ca nanofilamentary composite conductor with potential application in high-voltage power transmission

NASA Astrophysics Data System (ADS)

Tian, Liang

This study investigated the processing-structure-properties relationships in an Al/Ca composites using both experiments and modeling/simulation. A particular focus of the project was understanding how the strength and electrical conductivity of the composite are related to its microstructure in the hope that a conducting material with light weight, high strength, and high electrical conductivity can be developed to produce overhead high-voltage power transmission cables. The current power transmission cables (e.g., Aluminum Conductor Steel Reinforced (ACSR)) have acceptable performance for high-voltage AC transmission, but are less well suited for high-voltage DC transmission due to the poorly conducting core materials that support the cable weight. This Al/Ca composite was produced by powder metallurgy and severe plastic deformation by extrusion and swaging. The fine Ca metal powders have been produced by centrifugal atomization with rotating liquid oil quench bath, and a detailed study about the atomization process and powder characteristics has been conducted. The microstructure of Al/Ca composite was characterized by electron microscopy. Microstructure changes at elevated temperature were characterized by thermal analysis and indirect resistivity tests. The strength and electrical conductivity were measured by tensile tests and four-point probe resistivity tests. Predicting the strength and electrical conductivity of the composite was done by micro-mechanics-based analytical modeling. Microstructure evolution was studied by mesoscale-thermodynamics-based phase field modeling and a preliminary atomistic molecular dynamics simulation. The application prospects of this composite was studied by an economic analysis. This study suggests that the Al/Ca (20 vol. %) composite shows promise for use as overhead power transmission cables. Further studies are needed to measure the corrosion resistance, fatigue properties and energized field performance of this composite.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge.

PubMed

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Fundamental properties of high-temperature SF6 mixed with CO2 as a replacement for SF6 in high-voltage circuit breakers

NASA Astrophysics Data System (ADS)

Wang, Weizong; Rong, Mingzhe; Wu, Yi; Yan, Joseph D.

2014-06-01

Sulfur hexafluoride (SF6) gas, used widely in high-voltage circuit breakers, can produce a remarkable greenhouse effect if released into the atmosphere. Fundamental properties of SF6 mixed with CO2 at high temperatures are presented in this paper, considering their reduction of adverse impact on the environment as a replacement for pure SF6 in high-voltage circuit breakers: to the knowledge of the authors, related data have not been reported in the literature. The species composition and thermodynamic properties (mass density, enthalpy and specific heat at constant pressure) are determined by the method of Gibbs free energy minimization, using standard thermodynamic tables. The transport properties, including viscosity, thermal conductivity and electrical conductivity, are evaluated by using the Chapman-Enskog method expanded up to the third-order approximation (second order for viscosity). Particular attention is paid to the establishment of a collision integral database related to a reacting species system containing basic elements of carbon, oxygen and sulfur as well as fluoride by the use of recent cross sections or interaction potentials available in the literature. The calculations, which assume a local thermodynamic equilibrium, are performed in the temperature range 300 to 30 000 K for different pressures between 0.01 and 1.6 MPa. The results obtained are compared to those of previously published studies, and the reasons for discrepancies are analysed. An evaluation of the current interruption performance by adding CO2 to SF6 is discussed from a microscopic point of view. The results provide reliable reference data for the simulation of switching arcs in high-voltage circuit breakers in SF6-CO2 mixtures.

Battery Charge Equalizer with Transformer Array

NASA Technical Reports Server (NTRS)

Davies, Francis

2013-01-01

High-power batteries generally consist of a series connection of many cells or cell banks. In order to maintain high performance over battery life, it is desirable to keep the state of charge of all the cell banks equal. A method provides individual charging for battery cells in a large, high-voltage battery array with a minimum number of transformers while maintaining reasonable efficiency. This is designed to augment a simple highcurrent charger that supplies the main charge energy. The innovation will form part of a larger battery charge system. It consists of a transformer array connected to the battery array through rectification and filtering circuits. The transformer array is connected to a drive circuit and a timing and control circuit that allow individual battery cells or cell banks to be charged. The timing circuit and control circuit connect to a charge controller that uses battery instrumentation to determine which battery bank to charge. It is important to note that the innovation can charge an individual cell bank at the same time that the main battery charger is charging the high-voltage battery. The fact that the battery cell banks are at a non-zero voltage, and that they are all at similar voltages, can be used to allow charging of individual cell banks. A set of transformers can be connected with secondary windings in series to make weighted sums of the voltages on the primaries.

Impact of cation-π interactions on the cell voltage of carbon nanotube-based Li batteries.

PubMed

Gao, Shaohua; Shi, Guosheng; Fang, Haiping

2016-01-21

Carbon nanotube (CNT)-based Li batteries have attracted wide attention because of their high capacity, high cyclability and high energy density and are believed to be one of the most promising electrochemical energy storage systems. In CNT-based Li batteries, the main interaction between the Li(+) ions and the CNT is the cation-π interaction. However, up to now, it is still not clear how this interaction affects the storage characteristics of CNT-based Li batteries. Here, using density functional theory (DFT) calculations, we report a highly favorable impact of cation-π interactions on the cell voltage of CNT-based Li batteries. Considering both Li(+)-π interaction and Li-π interaction, we show that cell voltage enhances with the increase of the CNT diameter. In addition, when the Li(+) ion adsorbs on the external wall, the cell voltage is larger than that when it adsorbs on the internal wall. This suggests that CNTs with a large diameter and a low array density are more advantageous to enhance storage performance of CNT-based Li batteries. Compared with Li(+) ions on the (4,4) CNT internal wall, the cell voltage of Li(+) on the (10,10) CNT external wall is 0.55 V higher, which indicates an improvement of about 38%. These results will be helpful for the design of more efficient CNT-based Li batteries.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2007-01-09

A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2010-05-04

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Modular high voltage power supply for chemical analysis

DOEpatents

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2008-07-15

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

2018-03-01

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

Portable precision dc voltage-current transfer standard for electrometer calibration

USGS Publications Warehouse

Landis, G.; Godwin, M.

1982-01-01

A circuit design is presented for an instrument providing a highly stable and fully adjustable voltage and current in the range of 0-1.999 V or 0-199.9 mV and 10-11-10-15 A. This instrument is used to verify the calibration and performance of dc and vibrating reed electrometers and chart recorders on mass spectrometers of the USGS Isotope Laboratories in Denver.

Interface engineering in high-performance low-voltage organic thin-film transistors based on 2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes.

PubMed

Amin, Atefeh Y; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

2011-12-20

We investigated two different (2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes; C(n)-BTBT-C(n), where n = 12 or 13) semiconductors in low-voltage operating thin-film transistors. By choosing functional molecules in nanoscaled hybrid dielectric layers, we were able to tune the surface energy and improve device characteristics, such as leakage current and hysteresis. The dipolar nature of the self-assembled molecules led to a shift in the threshold voltage. All devices exhibited high charge carrier mobilities of 0.6-7.0 cm(2) V(-1) s(-1). The thin-film morphology of BTBT was studied by means of atomic force microscopy (AFM), presented a dependency upon the surface energy of the self-assembled monolayer (SAM) hybrid dielectrics but not upon the device performance. The use of C(13)-BTBT-C(13) on hybrid dielectrics of AlO(x) and a F(15)C(18)-phosphonic acid monolayer led to devices with a hole mobility of 1.9 cm(2) V(-1) s(-1) at 3 V, on/off ratio of 10(5), small device-device variation of mobility, and a threshold voltage of only -0.9 V, thus providing excellent characteristics for further integration. © 2011 American Chemical Society

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

NASA Astrophysics Data System (ADS)

Idris, M. I.; Weng, M. H.; Chan, H.-K.; Murphy, A. E.; Clark, D. T.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2016-12-01

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance-voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm-3) or near interface traps at the interface of the gate oxide and the semiconductor (1012-1013 cm-2 eV-1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

Simulations of momentum transfer process between solar wind plasma and bias voltage tethers of electric sail thruster

NASA Astrophysics Data System (ADS)

Xia, Guangqing; Han, Yajie; Chen, Liuwei; Wei, Yanming; Yu, Yang; Chen, Maolin

2018-06-01

The interaction between the solar wind plasma and the bias voltage of long tethers is the basic mechanism of the electric sail thruster. The momentum transfer process between the solar wind plasma and electric tethers was investigated using a 2D full particle PIC method. The coupled electric field distribution and deflected ion trajectory under different bias voltages were compared, and the influence of bias voltage on momentum transfer process was analyzed. The results show that the high potential of the bias voltage of long tethers will slow down, stagnate, reflect and deflect a large number of ions, so that ion cavities are formed in the vicinity of the tether, and the ions will transmit the axial momentum to the sail tethers to produce the thrust. Compared to the singe tether, double tethers show a better thrust performance.

High-frequency ac power distribution in Space Station

NASA Technical Reports Server (NTRS)

Tsai, Fu-Sheng; Lee, Fred C. Y.

1990-01-01

A utility-type 20-kHz ac power distribution system for the Space Station, employing resonant power-conversion techniques, is presented. The system converts raw dc voltage from photovoltaic cells or three-phase LF ac voltage from a solar dynamic generator into a regulated 20-kHz ac voltage for distribution among various loads. The results of EASY5 computer simulations of the local and global performance show that the system has fast response and good transient behavior. The ac bus voltage is effectively regulated using the phase-control scheme, which is demonstrated with both line and load variations. The feasibility of paralleling the driver-module outputs is illustrated with the driver modules synchronized and sharing a common feedback loop. An HF sinusoidal ac voltage is generated in the three-phase ac input case, when the driver modules are phased 120 deg away from one another and their outputs are connected in series.

Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Kumar, Amit; Chandran, Achu; Rangra, Kamaljit

2017-02-01

Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 µm to 1 µm. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range.

Treatment of emulsified oils by electrocoagulation: pulsed voltage applications.

PubMed

Genc, Ayten; Bakirci, Busra

2015-01-01

The effect of pulsed voltage application on energy consumption during electrocoagulation was investigated. Three voltage profiles having the same arithmetic average with respect to time were applied to the electrodes. The specific energy consumption for these profiles were evaluated and analyzed together with oil removal efficiencies. The effects of applied voltages, electrode materials, electrode configurations, and pH on oil removal efficiency were determined. Electrocoagulation experiments were performed by using synthetic and real wastewater samples. The pulsed voltages saved energy during the electrocoagulation process. In continuous operation, energy saving was as high as 48%. Aluminum electrodes used for the treatment of emulsified oils resulted in higher oil removal efficiencies in comparison with stainless steel and iron electrodes. When the electrodes gap was less than 1 cm, higher oil removal efficiencies were obtained. The highest oil removal efficiencies were 95% and 35% for the batch and continuous operating modes, respectively.

Effects of various applied voltages on physical properties of TiO2 nanotubes by anodization method

NASA Astrophysics Data System (ADS)

Hoseinzadeh, T.; Ghorannevis, Z.; Ghoranneviss, M.; Sari, A. H.; Salem, M. K.

2017-09-01

Three steps anodization process is used to synthesize highly ordered and uniform multilayered titanium oxide (TiO2) nanotubes and effect of different anodization voltages are studied on their physical properties such as structural, morphological and optical. The crystalized structure of the synthesized tubes is investigated by X-ray diffractometer analysis. To study the morphology of the tubes, field emission scanning electron microscopy is used, which showed that the wall thicknesses and the diameters of the tubes are affected by the different anodization voltages. Moreover, optical studies performed by diffuse reflection spectra suggested that band gap of the TiO2 nanotubes are also changed by applying different anodization voltages. In this study using physical investigations, an optimum anodization voltage is obtained to synthesize the uniform crystalized TiO2 nanotubes with suitable diameter, wall thickness and optical properties.

Improved photovoltaic performance from inorganic perovskite oxide thin films with mixed crystal phases

NASA Astrophysics Data System (ADS)

Chakrabartty, Joyprokash; Harnagea, Catalin; Celikin, Mert; Rosei, Federico; Nechache, Riad

2018-05-01

Inorganic ferroelectric perovskites are attracting attention for the realization of highly stable photovoltaic cells with large open-circuit voltages. However, the power conversion efficiencies of devices have been limited so far. Here, we report a power conversion efficiency of 4.20% under 1 sun illumination from Bi-Mn-O composite thin films with mixed BiMnO3 and BiMn2O5 crystal phases. We show that the photocurrent density and photovoltage mainly develop across grain boundaries and interfaces rather than within the grains. We also experimentally demonstrate that the open-circuit voltage and short-circuit photocurrent measured in the films are tunable by varying the electrical resistance of the device, which in turn is controlled by externally applying voltage pulses. The exploitation of multifunctional properties of composite oxides provides an alternative route towards achieving highly stable, high-efficiency photovoltaic solar energy conversion.

Electric power processing, distribution and control for advanced aerospace vehicles.

NASA Technical Reports Server (NTRS)

Krausz, A.; Felch, J. L.

1972-01-01

The results of a current study program to develop a rational basis for selection of power processing, distribution, and control configurations for future aerospace vehicles including the Space Station, Space Shuttle, and high-performance aircraft are presented. Within the constraints imposed by the characteristics of power generation subsystems and the load utilization equipment requirements, the power processing, distribution and control subsystem can be optimized by selection of the proper distribution voltage, frequency, and overload/fault protection method. It is shown that, for large space vehicles which rely on static energy conversion to provide electric power, high-voltage dc distribution (above 100 V dc) is preferable to conventional 28 V dc and 115 V ac distribution per MIL-STD-704A. High-voltage dc also has advantages over conventional constant frequency ac systems in many aircraft applications due to the elimination of speed control, wave shaping, and synchronization equipment.

High-wafer-yield, high-performance vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Li, Gabriel S.; Yuen, Wupen; Lim, Sui F.; Chang-Hasnain, Constance J.

1996-04-01

Vertical cavity surface emitting lasers (VCSELs) with very low threshold current and voltage of 340 (mu) A and 1.5 V is achieved. The molecular beam epitaxially grown wafers are grown with a highly accurate, low cost and versatile pre-growth calibration technique. One- hundred percent VCSEL wafer yield is obtained. Low threshold current is achieved with a native oxide confined structure with excellent current confinement. Single transverse mode with stable, predetermined polarization direction up to 18 times threshold is also achieved, due to stable index guiding provided by the structure. This is the highest value reported to data for VCSELs. We have established that p-contact annealing in these devices is crucial for low voltage operation, contrary to the general belief. Uniform doping in the mirrors also appears not to be inferior to complicated doping engineering. With these design rules, very low threshold voltage VCSELs are achieved with very simple growth and fabrication steps.

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Electronic Voltage and Current Transformers Testing Device

PubMed Central

Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

2012-01-01

A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware. PMID:22368510

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

High Performance Power Module for Hall Effect Thrusters

NASA Technical Reports Server (NTRS)

Pinero, Luis R.; Peterson, Peter Y.; Bowers, Glen E.

2002-01-01

Previous efforts to develop power electronics for Hall thruster systems have targeted the 1 to 5 kW power range and an output voltage of approximately 300 V. New Hall thrusters are being developed for higher power, higher specific impulse, and multi-mode operation. These thrusters require up to 50 kW of power and a discharge voltage in excess of 600 V. Modular power supplies can process more power with higher efficiency at the expense of complexity. A 1 kW discharge power module was designed, built and integrated with a Hall thruster. The breadboard module has a power conversion efficiency in excess of 96 percent and weighs only 0.765 kg. This module will be used to develop a kW, multi-kW, and high voltage power processors.

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 75.833 - Handling high-voltage trailing cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Handling high-voltage trailing cables. 75.833... High-Voltage Longwalls § 75.833 Handling high-voltage trailing cables. (a) Cable handling. (1) Miners must not handle energized trailing cables unless they are wearing high-voltage insulating gloves, which...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be...

Long-term performance analysis of CIGS thin-film PV modules

NASA Astrophysics Data System (ADS)

Dhere, Neelkanth G.; Kaul, Ashwani; Pethe, Shirish A.

2011-09-01

Current accelerated qualification tests of photovoltaic (PV) modules mostly assist in avoiding infant mortality but can neither duplicate changes occurring in the field nor can predict useful lifetime. Therefore, outdoor monitoring of fielddeployed thin-film PV modules was undertaken at FSEC with goals of assessing their performance in hot and humid climate under high system voltage operation and to correlate the PV performance with the meteorological parameters. Significant and comparable degradation rate of -5.13% and -4.5% per year was found by PV USA type regression analysis for the positive and negative strings respectively of 40W glass-to-glass CIGS thin-film PV modules in the hot and humid climate of Florida. With the current-voltage measurements it was found that the performance degradation within the PV array was mainly due to a few (8-12%) modules having a substantially high degradation. The remaining modules within the array continued to show reasonable performance (>96% of the rated power after ~ 4years).

Filtering and Control of High Speed Motor Current in a Flywheel Energy Storage System

NASA Technical Reports Server (NTRS)

Kenny, Barbara H.; Santiago, Walter

2004-01-01

The NASA Glenn Research Center has been developing technology to enable the use of high speed flywheel energy storage units in future spacecraft for the last several years. An integral part of the flywheel unit is the three phase motor/generator that is used to accelerate and decelerate the flywheel. The motor/generator voltage is supplied from a pulse width modulated (PWM) inverter operating from a fixed DC voltage supply. The motor current is regulated through a closed loop current control that commands the necessary voltage from the inverter to achieve the desired current. The current regulation loop is the innermost control loop of the overall flywheel system and, as a result, must be fast and accurate over the entire operating speed range (20,000 to 60,000 rpm) of the flywheel. The voltage applied to the motor is a high frequency PWM version of the DC bus voltage that results in the commanded fundamental value plus higher order harmonics. Most of the harmonic content is at the switching frequency and above. The higher order harmonics cause a rapid change in voltage to be applied to the motor that can result in large voltage stresses across the motor windings. In addition, the high frequency content in the motor causes sensor noise in the magnetic bearings that leads to disturbances for the bearing control. To alleviate these problems, a filter is used to present a more sinusoidal voltage to the motor/generator. However, the filter adds additional dynamics and phase lag to the motor system that can interfere with the performance of the current regulator. This paper will discuss the tuning methodology and results for the motor/generator current regulator and the impact of the filter on the control. Results at speeds up to 50,000 rpm are presented.

Energy breakdown in capacitive deionization.

PubMed

Hemmatifar, Ali; Palko, James W; Stadermann, Michael; Santiago, Juan G

2016-11-01

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages. We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). We show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency. Copyright © 2016 Elsevier Ltd. All rights reserved.

Energy breakdown in capacitive deionization

DOE PAGES

Hemmatifar, Ali; Palko, James W.; Stadermann, Michael; ...

2016-08-12

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages.more » We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). As a result, we show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency.« less

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

PubMed

Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

2018-03-05

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

Simulation study of a new inverse-pinch high Coulomb transfer switch

NASA Technical Reports Server (NTRS)

Choi, S. H.

1984-01-01

A simulation study of a simplified model of a high coulomb transfer switch is performed. The switch operates in an inverse pinch geometry formed by an all metal chamber, which greatly reduces hot spot formations on the electrode surfaces. Advantages of the switch over the conventional switches are longer useful life, higher current capability and lower inductance, which improves the characteristics required for a high repetition rate switch. The simulation determines the design parameters by analytical computations and comparison with the experimentally measured risetime, current handling capability, electrode damage, and hold-off voltages. The parameters of initial switch design can be determined for the anticipated switch performance. Results are in agreement with the experiment results. Although the model is simplified, the switch characteristics such as risetime, current handling capability, electrode damages, and hold-off voltages are accurately determined.

A micro-power precision amplifier for converting the output of light sensors to a voltage readable by miniature data loggers.

PubMed

Phillips, Nathan; Bond, Barbara J.

1999-07-01

To record photosynthetically active radiation (PAR) simultaneously at a number of points throughout a forest canopy, we developed a simple, inexpensive (< $10 US) current-to-voltage converter that processes the current generated by a photodiode radiation sensor to a voltage range that is recordable with a miniature data logger. The converter, which weighs less than 75 g and has a volume of only 100 cm(3), is built around an ultra-low power OP-90 precision operational amplifier, which consumes less than 0.5 mA at 9 V when converting the output of a Li-Cor LI-190SA quantum sensor exposed to photosynthetically active radiation (PAR) of 2500 &mgr;mol m(-2) s(-1) or only 5 &mgr;A in low light. A small 9-V battery thus powers the amplifier for more than 1000 h of continuous operation. Correlations between photometer readings and voltage output from the current-to-voltage converter were high and linear at both high and low PAR. Sixteen Li-Cor LI-190SA quantum sensors each equipped with current-to-voltage converters and connected to a miniature data logger were deployed in the upper branches of a Panamanian tropical rainforest canopy. Each unit performed reliably during a one- or two-week evaluation.

Detection of Large Ions in Time-of-Flight Mass Spectrometry: Effects of Ion Mass and Acceleration Voltage on Microchannel Plate Detector Response

NASA Astrophysics Data System (ADS)

Liu, Ranran; Li, Qiyao; Smith, Lloyd M.

2014-08-01

In time-of-flight mass spectrometry (TOF-MS), ion detection is typically accomplished by the generation and amplification of secondary electrons produced by ions colliding with a microchannel plate (MCP) detector. Here, the response of an MCP detector as a function of ion mass and acceleration voltage is characterized, for singly charged peptide/protein ions ranging from 1 to 290 kDa in mass, and for acceleration voltages from 5 to 25 kV. A nondestructive inductive charge detector (ICD) employed in parallel with MCP detection provides a reliable reference signal to allow accurate calibration of the MCP response. MCP detection efficiencies were very close to unity for smaller ions at high acceleration voltages (e.g., angiotensin, 1046.5 Da, at 25 kV acceleration voltage), but decreased to ~11% for the largest ions examined (immunoglobulin G (IgG) dimer, 290 kDa) even at the highest acceleration voltage employed (25 kV). The secondary electron yield γ (average number of electrons produced per ion collision) is found to be proportional to mv3.1 (m: ion mass, v: ion velocity) over the entire mass range examined, and inversely proportional to the square root of m in TOF-MS analysis. The results indicate that although MCP detectors indeed offer superlative performance in the detection of smaller peptide/protein species, their performance does fall off substantially for larger proteins, particularly under conditions of low acceleration voltage.

Polyanthraquinone-Based Organic Cathode for High-Performance Rechargeable Magnesium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Baofei; Huang, Jinhua; Feng, Zhenxing

2016-05-09

Two anthraquinone-based polymers aiming at improving the capacity and voltage of magnesium ion batteries, were synthesized and characterized. The excellent battery cycling performance was demonstrated with the electrolyte consisting of magnesium bis(hexamethyldisilazide) and magnesium chloride.

Measurements of plasma profiles using a fast swept Langmuir probe in the VINETA-II magnetic reconnection experiment

NASA Astrophysics Data System (ADS)

Shesterikov, I.; Von Stechow, A.; Grulke, O.; Stenzel, R.; Klinger, T.

2017-07-01

A fast-swept Langmuir probe capable to be biased at a high voltages has been constructed and successfully operated at the VINETA-II magnetic reconnection experiment. The presented circuit has two main features beneficial for fast transient parameter changes in laboratory experiments as, e.g., plasma guns or magnetic reconnection: the implementation simplicity and the high voltage sweep range. This work presents its design and performance for time-dependent measurements of VINETA-II plasmas. The probe is biased with a sinusoidal voltage at a fixed frequency. Current - voltage characteristics are measured along the falling and rising slopes of the probe bias. The sweep frequency is fsweep= 150 kHz. The spatiotemporal evolution of radial plasma profiles is obtained by evaluation of the probe characteristics. The plasma density measurements agree with those derived from a microwave interferometer, demonstrating the reliability of the measurements. As a model plasma system, a plasma gun discharge with typical pulse times of 60 μ s is chosen.

ASDTIC: A feedback control innovation

NASA Technical Reports Server (NTRS)

Lalli, V. R.; Schoenfeld, A. D.

1972-01-01

The ASDTIC (Analog Signal to Discrete Time Interval Converter) control subsystem provides precise output control of high performance aerospace power supplies. The key to ASDTIC operation is that it stably controls output by sensing output energy change as well as output magnitude. The ASDTIC control subsystem and control module were developed to improve power supply performance during static and dynamic input voltage and output load variations, to reduce output voltage or current regulation due to component variations or aging, to maintain a stable feedback control with variations in the loop gain or loop time constants, and to standardize the feedback control subsystem for power conditioning equipment.

Nanometer-Scale Electrical Potential Profiling Across Perovskite Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun-Sheng; Ke, Weijun

2016-11-21

We used Kelvin probe force microscopy to study the potential distribution on cross-section of perovskite solar cells with different types of electron-transporting layers (ETLs). Our results explain the low open-circuit voltage and fill factor in ETL-free cells, and support the fact that intrinsic SnO2 as an alternative ETL material can make high-performance devices. Furthermore, the potential-profiling results indicate a reduction in junction-interface recombination by the optimized SnO2 layer and adding a fullerene layer, which is consistent with the improved device performance and current-voltage hysteresis.

ASDTIC - A feedback control innovation.

NASA Technical Reports Server (NTRS)

Lalli, V. R.; Schoenfeld, A. D.

1972-01-01

The ASDTIC (analog signal to discrete time interval converter) control subsystem provides precise output control of high performance aerospace power supplies. The key to ASDTIC operation is that it stably controls output by sensing output energy change as well as output magnitude. The ASDTIC control subsystem and control module were developed to improve power supply performance during static and dynamic input voltage and output load variations, to reduce output voltage or current regulation due to component variations or aging, to maintain a stable feedback control with variations in the loop gain or loop time constants, and to standardize the feedback control subsystem for power conditioning equipment.

Control of Analyte Electrolysis in Electrospray Ionization Mass Spectrometry Using Repetitively Pulsed High Voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kertesz, Vilmos; Van Berkel, Gary J

2011-01-01

Analyte electrolysis using a repetitively pulsed high voltage ion source was investigated and compared to that using a regular, continuously operating direct current high voltage ion source in electrospray ionization mass spectrometry. The extent of analyte electrolysis was explored as a function of the length and frequency of the high voltage pulse using the model compound reserpine in positive ion mode. Using +5 kV as the maximum high voltage amplitude, reserpine was oxidized to its 2, 4, 6 and 8-electron oxidation products when direct current high voltage was employed. In contrast, when using a pulsed high voltage, oxidation of reserpinemore » was eliminated by employing the appropriate high voltage pulse length and frequency. This effect was caused by inefficient mass transport of the analyte to the electrode surface during the duration of the high voltage pulse and the subsequent relaxation of the emitter electrode/ electrolyte interface during the time period when the high voltage was turned off. This mode of ESI source operation allows for analyte electrolysis to be quickly and simply switched on or off electronically via a change in voltage pulse variables.« less

One-Step Method to Prepare PLLA Porous Microspheres in a High-Voltage Electrostatic Anti-Solvent Process

PubMed Central

Wang, Ying; Zhu, Li-Hui; Chen, Ai-Zheng; Xu, Qiao; Hong, Yu-Juan; Wang, Shi-Bin

2016-01-01

A one-step method using a high-voltage electrostatic anti-solvent process was employed to fabricate poly-l-lactide (PLLA) porous microspheres (PMs). To address the simplification and control of the preparation process, a 24 full factorial experiment was performed to optimize the operating process and analyze the effect of the factors on the morphology and aerodynamic properties of the PLLA PMs, and various characterization tests were also performed. The resulting PLLA PMs exhibited an even and porous morphology with a density less than 0.4 g/cm3, a geometric mean diameter (Dg) of 10–30 μm, an aerodynamic diameter (Da) of 1–5 μm, a fine particle fraction (FPF) of 56.3%, and a porosity of 76.2%, meeting the requirements for pulmonary drug delivery. The physicochemical characterizations reveal that no significant chemical change occurred in the PLLA during the process. An investigation of its in vitro cytotoxicity and pulmonary toxicity shows no obvious toxic response, indicating good biosafety. This study indicates that the one-step method using a high-voltage electrostatic anti-solvent process has great potential in developing an inhalable drug carrier for pulmonary drug delivery. PMID:28773489

High-energy MnO2 nanowire/graphene and graphene asymmetric electrochemical capacitors.

PubMed

Wu, Zhong-Shuai; Ren, Wencai; Wang, Da-Wei; Li, Feng; Liu, Bilu; Cheng, Hui-Ming

2010-10-26

In order to achieve high energy and power densities, we developed a high-voltage asymmetric electrochemical capacitor (EC) based on graphene as negative electrode and a MnO(2) nanowire/graphene composite (MGC) as positive electrode in a neutral aqueous Na(2)SO(4) solution as electrolyte. MGC was prepared by solution-phase assembly of graphene sheets and α-MnO(2) nanowires. Such aqueous electrolyte-based asymmetric ECs can be cycled reversibly in the high-voltage region of 0-2.0 V and exhibit a superior energy density of 30.4 Wh kg(-1), which is much higher than those of symmetric ECs based on graphene//graphene (2.8 Wh kg(-1)) and MGC//MGC (5.2 Wh kg(-1)). Moreover, they present a high power density (5000 W kg(-1) at 7.0 Wh kg(-1)) and acceptable cycling performance of ∼79% retention after 1000 cycles. These findings open up the possibility of graphene-based composites for applications in safe aqueous electrolyte-based high-voltage asymmetric ECs with high energy and power densities.

Low Power, High Voltage Power Supply with Fast Rise/Fall Time

NASA Technical Reports Server (NTRS)

Bearden, Douglas B. (Inventor)

2007-01-01

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Low power, high voltage power supply with fast rise/fall time

NASA Technical Reports Server (NTRS)

Bearden, Douglas B. (Inventor)

2007-01-01

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Modification of Ni-Rich FCG NMC and NCA Cathodes by Atomic Layer Deposition: Preventing Surface Phase Transitions for High-Voltage Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Mohanty, Debasish; Dahlberg, Kevin; King, David M.; David, Lamuel A.; Sefat, Athena S.; Wood, David L.; Daniel, Claus; Dhar, Subhash; Mahajan, Vishal; Lee, Myongjai; Albano, Fabio

2016-05-01

The energy density of current lithium-ion batteries (LIBs) based on layered LiMO2 cathodes (M = Ni, Mn, Co: NMC; M = Ni, Co, Al: NCA) needs to be improved significantly in order to compete with internal combustion engines and allow for widespread implementation of electric vehicles (EVs). In this report, we show that atomic layer deposition (ALD) of titania (TiO2) and alumina (Al2O3) on Ni-rich FCG NMC and NCA active material particles could substantially improve LIB performance and allow for increased upper cutoff voltage (UCV) during charging, which delivers significantly increased specific energy utilization. Our results show that Al2O3 coating improved the NMC cycling performance by 40% and the NCA cycling performance by 34% at 1 C/-1 C with respectively 4.35 V and 4.4 V UCV in 2 Ah pouch cells. High resolution TEM/SAED structural characterization revealed that Al2O3 coatings prevented surface-initiated layered-to-spinel phase transitions in coated materials which were prevalent in uncoated materials. EIS confirmed that Al2O3-coated materials had significantly lower increase in the charge transfer component of impedance during cycling. The ability to mitigate degradation mechanisms for Ni-rich NMC and NCA illustrated in this report provides insight into a method to enable the performance of high-voltage LIBs.

Modification of Ni-Rich FCG NMC and NCA Cathodes by Atomic Layer Deposition: Preventing Surface Phase Transitions for High-Voltage Lithium-Ion Batteries

PubMed Central

Mohanty, Debasish; Dahlberg, Kevin; King, David M.; David, Lamuel A.; Sefat, Athena S.; Wood, David L.; Daniel, Claus; Dhar, Subhash; Mahajan, Vishal; Lee, Myongjai; Albano, Fabio

2016-01-01

The energy density of current lithium-ion batteries (LIBs) based on layered LiMO2 cathodes (M = Ni, Mn, Co: NMC; M = Ni, Co, Al: NCA) needs to be improved significantly in order to compete with internal combustion engines and allow for widespread implementation of electric vehicles (EVs). In this report, we show that atomic layer deposition (ALD) of titania (TiO2) and alumina (Al2O3) on Ni-rich FCG NMC and NCA active material particles could substantially improve LIB performance and allow for increased upper cutoff voltage (UCV) during charging, which delivers significantly increased specific energy utilization. Our results show that Al2O3 coating improved the NMC cycling performance by 40% and the NCA cycling performance by 34% at 1 C/−1 C with respectively 4.35 V and 4.4 V UCV in 2 Ah pouch cells. High resolution TEM/SAED structural characterization revealed that Al2O3 coatings prevented surface-initiated layered-to-spinel phase transitions in coated materials which were prevalent in uncoated materials. EIS confirmed that Al2O3-coated materials had significantly lower increase in the charge transfer component of impedance during cycling. The ability to mitigate degradation mechanisms for Ni-rich NMC and NCA illustrated in this report provides insight into a method to enable the performance of high-voltage LIBs. PMID:27226071

Modification of Ni-Rich FCG NMC and NCA Cathodes by Atomic Layer Deposition: Preventing Surface Phase Transitions for High-Voltage Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohanty, Debasish; Dahlberg, Kevin; King, David M.

2016-05-26

The energy density of current lithium-ion batteries (LIBs) based on layered LiMO 2 cathodes (M=Ni, Mn, Co: NMC; M=Ni, Co, Al: NCA) needs to be improved significantly in order to compete with internal combustion engines and allow for widespread implementation of electric vehicles (EVs). In this report, we show that atomic layer deposition (ALD) of titania (TiO 2) and alumina (Al 2O 3) on Ni-rich FCG NMC and NCA active material particles could substantially improve LIB performance and allow for increased upper cutoff voltage (UCV) during charging, which delivers significantly increased specific energy utilization. Our results show that Al2O3 coatingmore » improved the NMC cycling performance by 40% and the NCA cycling performance by 34% at 1C/₋1C with respectively 4.35V and 4.4V UCV in 2Ah pouch cells. High resolution TEM/SAED structural characterization revealed that Al 2O 3 coatings prevented surface-initiated layered-to-spinel phase transitions in coated materials which were prevalent in uncoated materials. Lastly, EIS confirmed that Al 2O 3-coated materials had significantly lower increase in the charge transfer component of impedance during cycling. In conclusion, the ability to mitigate degradation mechanisms for Ni-rich NMC and NCA illustrated in this report provides insight into a method to enable the performance of high-voltage LIBs.« less

30 CFR 75.705 - Work on high-voltage lines; deenergizing and grounding.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines; deenergizing and... Work on high-voltage lines; deenergizing and grounding. [Statutory Provisions] High-voltage lines, both..., except that repairs may be permitted, in the case of energized surface high-voltage lines, if such...

30 CFR 75.813 - High-voltage longwalls; scope.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage...

30 CFR 75.813 - High-voltage longwalls; scope.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false High-voltage longwalls; scope. 75.813 Section 75.813 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage...

Performance of (CoPC)n catalyst in active lithium-thionyl chloride cells

NASA Technical Reports Server (NTRS)

Shah, Pinakin M.

1990-01-01

An experimental study was conducted with anode limited D size cells to characterize the performance of an active lithium-thionyl chloride (Li/SOCl2) system using the polymeric cobalt phthalocyanine, (CoPC)n, catalyst in carbon cathodes. The author describes the results of this experiment with respect to initial voltage delays, operating voltages, and capacities. The effectiveness of the preconditioning methods evolved to alleviate passivation effects on storage are also discussed. The results clearly demonstrated the superior high rate capability of cells with the catalyst. The catalyst did not adversely impact the performance of cells after active storage for up to 6 months, while retaining its beneficial influences.

Development of a High-speed Electromagnetic Repulsion Mechanism for High-voltage Vacuum Circuit Breakers

NASA Astrophysics Data System (ADS)

Tsukima, Mitsuru; Takeuchi, Toshie; Koyama, Kenichi; Yoshiyasu, Hajimu

This paper presents a design and testing of a new high-speed electromagnetic driving mechanism for a high-voltage vacuum circuit breaker (VCB). This mechanism is based on a high-speed electromagnetic repulsion and a permanent magnet spring (PMS). This PMS is introduced instead of the conventional disk spring due to its low spring energy and more suitable force characteristics for VCB application. The PMS has been optimally designed by the 3d non-linear finite-elements magnetic field analysis and investigated its internal friction and eddy-current effect. Furthermore, we calculated the dynamic of this mechanism coupling with the electromagnetic field and circuit analysis, in order to satisfy the operating characteristics—contact velocity, response time and so on, required for the high-speed VCB. A prototype VCB, which was built based on the above analysis shows sufficient operating performance. Finally, the short circuit interruption tests were carried out with this prototype breaker, and we have been able to verify its satisfying performance.

Gradient-Induced Voltages on 12-Lead ECGs during High Duty-Cycle MRI Sequences and a Method for Their Removal considering Linear and Concomitant Gradient Terms

PubMed Central

Zhang, Shelley HuaLei; Ho Tse, Zion Tsz; Dumoulin, Charles L.; Kwong, Raymond Y.; Stevenson, William G.; Watkins, Ronald; Ward, Jay; Wang, Wei; Schmidt, Ehud J.

2015-01-01

Purpose To restore 12-lead ECG signal fidelity inside MRI by removing magnetic-field gradient induced-voltages during high gradient-duty-cycle sequences. Theory and Methods A theoretical equation was derived, providing first- and second-order electrical fields induced at individual ECG electrode as a function of gradient fields. Experiments were performed at 3T on healthy volunteers, using a customized acquisition system which captured full amplitude and frequency response of ECGs, or a commercial recording system. The 19 equation coefficients were derived by linear regression of data from accelerated sequences, and used to compute induced-voltages in real-time during full-resolution sequences to remove ECG artifacts. Restored traces were evaluated relative to ones acquired without imaging. Results Measured induced-voltages were 0.7V peak-to-peak during balanced Steady-State Free Precession (bSSFP) with heart at the isocenter. Applying the equation during gradient echo sequencing, three-dimensional fast spin echo and multi-slice bSSFP imaging restored nonsaturated traces and second-order concomitant terms showed larger contributions in electrodes farther from the magnet isocenter. Equation coefficients are evaluated with high repeatability (ρ = 0.996) and are subject, sequence, and slice-orientation dependent. Conclusion Close agreement between theoretical and measured gradient-induced voltages allowed for real-time removal. Prospective estimation of sequence-periods where large induced-voltages occur may allow hardware removal of these signals. PMID:26101951

30 CFR 75.807 - Installation of high-voltage transmission cables.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Installation of high-voltage transmission...-Voltage Distribution § 75.807 Installation of high-voltage transmission cables. [Statutory Provisions] All underground high-voltage transmission cables shall be installed only in regularly inspected air courses and...

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency

NASA Astrophysics Data System (ADS)

Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

2015-07-01

To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4‧, 4″ -tris[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB), the efficient charge injection and transporting, barrier-free hole-electron recombination for the formation of the interfacial exciplex, and elimination of charge traps of phosphors in the emissive layer are realized simultaneously, resulting in a turn-on voltage of 2.36 V, a record high PE of 97.2 lm W-1, as well as extremely low driving voltage of 2.60 V at 100 cd m-2, 3.03 V at 1000 cd m-2 and 4.08 V at 10000 cd m-2. This report is the first time that the PE performance of s-PhOLED approaches 100 lm W-1 high level, even superior to the corresponding state-of-the-art performance of the same color vacuum-deposited PhOLED (v-PhOLED) counterpart. We anticipate this report opens a new avenue for achieving power efficient monochromatic and white s-PhOLEDs with simple structures.

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency

PubMed Central

Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

2015-01-01

To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4′, 4″ -tris[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB), the efficient charge injection and transporting, barrier-free hole-electron recombination for the formation of the interfacial exciplex, and elimination of charge traps of phosphors in the emissive layer are realized simultaneously, resulting in a turn-on voltage of 2.36 V, a record high PE of 97.2 lm W−1, as well as extremely low driving voltage of 2.60 V at 100 cd m−2, 3.03 V at 1000 cd m−2 and 4.08 V at 10000 cd m−2. This report is the first time that the PE performance of s-PhOLED approaches 100 lm W−1 high level, even superior to the corresponding state-of-the-art performance of the same color vacuum-deposited PhOLED (v-PhOLED) counterpart. We anticipate this report opens a new avenue for achieving power efficient monochromatic and white s-PhOLEDs with simple structures. PMID:26204810

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency.

PubMed

Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

2015-07-24

To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4', 4″-tris[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB), the efficient charge injection and transporting, barrier-free hole-electron recombination for the formation of the interfacial exciplex, and elimination of charge traps of phosphors in the emissive layer are realized simultaneously, resulting in a turn-on voltage of 2.36 V, a record high PE of 97.2 lm W(-1), as well as extremely low driving voltage of 2.60 V at 100 cd m(-2), 3.03 V at 1000 cd m(-2) and 4.08 V at 10000 cd m(-2). This report is the first time that the PE performance of s-PhOLED approaches 100 lm W(-1) high level, even superior to the corresponding state-of-the-art performance of the same color vacuum-deposited PhOLED (v-PhOLED) counterpart. We anticipate this report opens a new avenue for achieving power efficient monochromatic and white s-PhOLEDs with simple structures.

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Design of DSP-based high-power digital solar array simulator

NASA Astrophysics Data System (ADS)

Zhang, Yang; Liu, Zhilong; Tong, Weichao; Feng, Jian; Ji, Yibo

2013-12-01

To satisfy rigid performance specifications, a feedback control was presented for zoom optical lens plants. With the increasing of global energy consumption, research of the photovoltaic(PV) systems get more and more attention. Research of the digital high-power solar array simulator provides technical support for high-power grid-connected PV systems research.This paper introduces a design scheme of the high-power digital solar array simulator based on TMS320F28335. A DC-DC full-bridge topology was used in the system's main circuit. The switching frequency of IGBT is 25kHz.Maximum output voltage is 900V. Maximum output current is 20A. Simulator can be pre-stored solar panel IV curves.The curve is composed of 128 discrete points .When the system was running, the main circuit voltage and current values was feedback to the DSP by the voltage and current sensors in real-time. Through incremental PI,DSP control the simulator in the closed-loop control system. Experimental data show that Simulator output voltage and current follow a preset solar panels IV curve. In connection with the formation of high-power inverter, the system becomes gridconnected PV system. The inverter can find the simulator's maximum power point and the output power can be stabilized at the maximum power point (MPP).

Mitigating voltage lead errors of an AC Josephson voltage standard by impedance matching

NASA Astrophysics Data System (ADS)

Zhao, Dongsheng; van den Brom, Helko E.; Houtzager, Ernest

2017-09-01

A pulse-driven AC Josephson voltage standard (ACJVS) generates calculable AC voltage signals at low temperatures, whereas measurements are performed with a device under test (DUT) at room temperature. The voltage leads cause the output voltage to show deviations that scale with the frequency squared. Error correction mechanisms investigated so far allow the ACJVS to be operational for frequencies up to 100 kHz. In this paper, calculations are presented to deal with these errors in terms of reflected waves. Impedance matching at the source side of the system, which is loaded with a high-impedance DUT, is proposed as an accurate method to mitigate these errors for frequencies up to 1 MHz. Simulations show that the influence of non-ideal component characteristics, such as the tolerance of the matching resistor, the capacitance of the load input impedance, losses in the voltage leads, non-homogeneity in the voltage leads, a non-ideal on-chip connection and inductors between the Josephson junction array and the voltage leads, can be corrected for using the proposed procedures. The results show that an expanded uncertainty of 12 parts in 106 (k  =  2) at 1 MHz and 0.5 part in 106 (k  =  2) at 100 kHz is within reach.

To improve the performance of sediment microbial fuel cell through amending colloidal iron oxyhydroxide into freshwater sediments.

PubMed

Zhou, Yan-Li; Yang, Ying; Chen, Mo; Zhao, Zhi-Wei; Jiang, He-Long

2014-05-01

Effects of iron oxide amendment into freshwater sediments on performance of sediment microbial fuel cell (SMFC) were investigated. It was found that amending amorphous bulk ferric oxyhydroxide, and crystalline goethite and magnetite did not affect SMFC operation. However, amendment of the mixed solution including soluble ferric citrate and colloidal iron oxyhydroxide, stably improved SMFC performance with voltage outputs up to threefolds higher than those without amendment. The enhanced voltage production corresponded to lower anode potential, but was not related to organic matter removal in sediments. Further experiments demonstrated that colloidal iron oxyhydroxide instead of soluble ferric iron played an important role in voltage production through maintaining high-concentration ferrous iron in pore water of sediments as electron shuttle and for chemical oxidation on the anode. Thus, colloidal iron oxyhydroxide amendment was a promising strategy to improve power production from SMFC employed in sediments especially with low content of organic matters. Copyright © 2014 Elsevier Ltd. All rights reserved.

A miniature transformer/dc-dc converter for implantable medical devices

NASA Astrophysics Data System (ADS)

Mohammed, Osama A.; Jones, W. Kinzy

1988-11-01

This paper presents a new technique for the design of a miniature dc-dc converter used in energy producing implantable devices such as defibrillators and advanced pacemakers. This converter is inserted in such a device and is used to boost the voltage from a low voltage implanted battery to high voltage energy storage capacitors in a short period of time. The stored energy is then delivered, when needed, through an energy delivery circuit in order to stimulate or defibrillate the heart. The converter takes the form of a flyback topology which includes a miniature transformer and a specialized control circuit. The transformer was designed using a new numerical synthesis method which utilizes finite elements and dynamic programming for predicting the geometries of the transformer's magnetic circuit. The final transformer design satisfied the performance criteria and provided means for selecting the converter components. The obtained performance results for the transformer and the dc-dc converter were in excellent agreement with laboratory performance tests.

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

High current nonlinear transmission line based electron beam driver

NASA Astrophysics Data System (ADS)

Hoff, B. W.; French, D. M.; Simon, D. S.; Lepell, P. D.; Montoya, T.; Heidger, S. L.

2017-10-01

A gigawatt-class nonlinear transmission line based electron beam driver is experimentally demonstrated. Four experimental series, each with a different Marx bank charge voltage (15, 20, 25, and 30 kV), were completed. Within each experimental series, shots at peak frequencies ranging from 950 MHz to 1.45 GHz were performed. Peak amplitude modulations of the NLTL output voltage signal were found to range between 18% and 35% for the lowest frequency shots and between 5% and 20% for the highest frequency shots (higher modulation at higher Marx charge voltage). Peak amplitude modulations of the electron beam current were found to range between 10% and 20% for the lowest frequency shots and between 2% and 7% for the highest frequency shots (higher modulation at higher Marx charge voltage).

High-Voltage High-Energy Stretched Lens Array Square-Rigger (SLASR) for Direct-Drive Solar Electric Propulsion

NASA Technical Reports Server (NTRS)

Howell, Joe T.; O'Neill, Mark J.; Mankins, John C.

2006-01-01

Development is underway on a unique high-voltage, high energy solar concentrator array called Stretched Lens Array Square-Rigger (SLASR) for direct drive electric propulsion. The SLASR performance attributes closely match the critical needs of solar electric propulsion (SEP) systems, which may be used for space tugs to fuel efficiently transport cargo from low earth orbit (LEO) to low lunar orbit (LLO), in support of NASA's robotic and human exploration missions. Later SEP systems may similarly transport cargo from the earth-moon neighborhood to the Mars neighborhood. This paper will describe the SLASR technology, discuss SLASR developments and ground testing, and outline plans for future SLASR technology maturation.

High-Voltage High-Energy Stretched Lens Array Square-Rigger (SLASR) for Direct-Drive Solar Electric Propulsion

NASA Technical Reports Server (NTRS)

Howell, Joe T.; O'Neill, Mark; Mankins, John C.

2006-01-01

Development is underway on a unique high-voltage, high-energy solar concentrator array called Stretched Lens Array Square-Rigger (SLASR) for direct drive electric propulsion. The SLASR performance attributes closely match the critical needs of solar electric propulsion (SEP) systems, which may be used for space tugs to fuel-efficiently transport cargo from low earth orbit (LEO) to low lunar orbit (LLO), in support of NASA s robotic and human exploration missions. Later SEP systems may similarly transport cargo from the earth-moon neighborhood to the Mars neighborhood. This paper will describe the SLASR technology, discuss SLASR developments and ground testing, and outline plans for future SLASR technology maturation.

Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.

Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the devicemore » performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.« less

High-performance Ge p-i-n photodetector on Si substrate

NASA Astrophysics Data System (ADS)

Chen, Li-qun; Huang, Xiang-ying; Li, Min; Huang, Yan-hua; Wang, Yue-yun; Yan, Guang-ming; Li, Cheng

2015-05-01

High-performance and tensile-strained germanium (Ge) p-i-n photodetector is demonstrated on Si substrate. The epitaxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition (UHV-CVD) system using low temperature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 μm is about 2.5×10-7 μA at the bias voltage of -1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth (BW) of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.

High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Longxing; Zhang, Quanlin; Chen, Mingming

2014-08-18

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diodemore » is potential for applications of portable UV detectors without driving power.« less

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

PubMed

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

30 CFR 75.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... shall be equipped with devices to provide protection against under-voltage grounded phase, short circuit... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. [Statutory Provisions] High-voltage circuits entering...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide

NASA Astrophysics Data System (ADS)

Miyoshi, Tomoyuki; Oshima, Takayuki; Noguchi, Junji

2015-05-01

High voltage laterally diffused MOS (LDMOS) FETs are widely used in analog applications. A Field-MOSFET with a thick gate oxide is one of the best ways of achieving a simpler design and smaller circuit footprint for high-voltage analog circuits. This paper focuses on an approach to improving the reliability of p-channel Field-MOSFETs. By introducing a fluorine implantation process and terminating fluorine at the LOCOS bird’s beak, the gate oxide breakdown voltage could be raised to 350 V at a high-slew rate and the negative bias temperature instability (NBTI) shift could be kept to within 15% over a product’s lifetime. By controlling the amount of charge in the insulating layer through improving the interlayer dielectric (ILD) deposition processes, a higher BVDSS of 370 V and 10-year tolerability of 300 V were obtained with an assisted reduced surface electric field (RESURF) effect. These techniques can supply an efficient solution for ensuring reliable high-performance applications.

New controller for high voltage converter modulator at spallation neutron source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wezensky, Mark W; Brown, David L; Lee, Sung-Woo

2017-01-01

The Spallation Neutron Source (SNS) has developed a new control system for the High Voltage Convertor Modulator (HVCM) at the SNS to replace the original control system which is approaching obsolescence. The original system was based on controllers for similar high voltage systems that were already in use [1]. The new controller, based on National Instruments PXI/FlexRIO Field Programmable Gate Array (FPGA) platform, offers enhancements such as modular construction, flexibility and non-proprietary software. The new controller also provides new capabilities like various methods for modulator pulse flattening, waveform capture, and first fault detection. This paper will discuss the design ofmore » the system, including the human machine interface, based on lessons learned at the SNS and other projects. It will also discuss performance and other issues related to its operation in an accelerator facility which requires high availability. To date, 73% of the operational HVCMs have been upgraded to with the new controller, and the remainder are scheduled for completion by mid-2017.« less

Wireless Sensor Network for Radiometric Detection and Assessment of Partial Discharge in High-Voltage Equipment

NASA Astrophysics Data System (ADS)

Upton, D. W.; Saeed, B. I.; Mather, P. J.; Lazaridis, P. I.; Vieira, M. F. Q.; Atkinson, R. C.; Tachtatzis, C.; Garcia, M. S.; Judd, M. D.; Glover, I. A.

2018-03-01

Monitoring of partial discharge (PD) activity within high-voltage electrical environments is increasingly used for the assessment of insulation condition. Traditional measurement techniques employ technologies that either require off-line installation or have high power consumption and are hence costly. A wireless sensor network is proposed that utilizes only received signal strength to locate areas of PD activity within a high-voltage electricity substation. The network comprises low-power and low-cost radiometric sensor nodes which receive the radiation propagated from a source of PD. Results are reported from several empirical tests performed within a large indoor environment and a substation environment using a network of nine sensor nodes. A portable PD source emulator was placed at multiple locations within the network. Signal strength measured by the nodes is reported via WirelessHART to a data collection hub where it is processed using a location algorithm. The results obtained place the measured location within 2 m of the actual source location.

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

NASA Technical Reports Server (NTRS)

DeGregorio, Kelly; Wilson, Dale G.

2009-01-01

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

Effect of ethylene glycol bis (propionitrile) ether (EGBE) on the performance and interfacial chemistry of lithium-rich layered oxide cathode

NASA Astrophysics Data System (ADS)

Hong, Pengbo; Xu, Mengqing; Zheng, Xiongwen; Zhu, Yunmin; Liao, Youhao; Xing, Lidan; Huang, Qiming; Wan, Huaping; Yang, Yongjun; Li, Weishan

2016-10-01

Ethylene glycol bis (propionitrile) ether (EGBE) is used as an electrolyte additive to improve the cycling stability and rate capability of Li/Li1.2Mn0.54Ni0.13Co0.13O2 cells at high operating voltage (4.8 V). After 150 cycles, cells with 1.0 wt% of EGBE containing electrolyte have remarkable cycling performance, 89.0% capacity retention; while the cells with baseline electrolyte only remain 67.4% capacity retention. Linear sweep voltammetry (LSV) and computation results demonstrate that EGBE preferably oxidizes on the cathode surface compared to the LiPF6/carbonate electrolyte. In order to further understand the effects of EGBE on Li1.2Mn0.54Ni0.13Co0.13O2 cathode upon cycling at high voltage, electrochemical behaviors and ex-situ surface analysis of Li1.2Mn0.54Ni0.13Co0.13O2 are investigated via electrochemical impedance spectroscopy (EIS), scanning electron spectroscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and inductive coupled plasma spectroscopy (ICP-MS). The improved cycling performance can be attributed to more stable and robust surface layer yield via incorporation of EGBE, which mitigates the oxidation of electrolyte on the cathode electrode, and also inhibits the dissolution of bulk transition metal ions as well upon cycling at high voltage.

Low voltage polymer network liquid crystal for infrared spatial light modulators.

PubMed

Peng, Fenglin; Xu, Daming; Chen, Haiwei; Wu, Shin-Tson

2015-02-09

We report a low-voltage and fast-response polymer network liquid crystal (PNLC) infrared phase modulator. To optimize device performance, we propose a physical model to understand the curing temperature effect on average domain size. Good agreement between model and experiment is obtained. By optimizing the UV curing temperature and employing a large dielectric anisotropy LC host, we have lowered the 2π phase change voltage to 22.8V at 1.55μm wavelength while keeping response time at about 1 ms. Widespread application of such a PNLC integrated into a high resolution liquid-crystal-on-silicon (LCoS) for infrared spatial light modulator is foreseeable.

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

NASA Astrophysics Data System (ADS)

Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

2016-02-01

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Programmable differential capacitance-to-voltage converter for MEMS accelerometers

NASA Astrophysics Data System (ADS)

Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

2017-05-01

Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Development of high-performing semiconducting polymers for organic electrochemical transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nielsen, Christian

2016-11-01

The organic electrochemical transistor (OECT), capable of amplifying small electrical signals in an aqueous environment, is an ideal device to utilize in organic bioelectronic applications involving for example neural interfacing and diagnostics. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene)-based suspensions such as PEDOT:PSS and are therefore operated in depletion mode giving rise to devices that are permanently on with non-optimal operational voltage. With the aim to develop and utilize efficient accumulation mode OECT devices, we discuss here our recent results regarding the design, synthesis and performance of novel intrinsic semiconducting polymers. Covering key aspects such as ion and charge transport in the bulk semiconductor and operational voltage and stability of the materials and devices, we have elucidated important structure-property relationships. We illustrate the improvements this approach has afforded in the development of high performance accumulation mode OECT materials.

NO Removal with Repetitive Discharges Caused by Reciprocal Traveling Wave Voltage Pulse in a Coaxial Cable

NASA Astrophysics Data System (ADS)

Yamaga, Keisuke; Kadowaki, Kazunori; Nishimoto, Sakae; Kitani, Isamu

This paper describes experimental results of NO removal using barrier discharges produced by a reciprocal pulse generator. When a coaxial cable is charged and then grounded at one end of the cable without any resistance, a reciprocal traveling voltage pulse is repeatedly applied to a barrier-type reactor at the opposite end with a change in its polarity. 50% streamer initiation voltage for the reciprocal pulse generator was much smaller than that with the self-matched pulse generator having a matching resistance. The reason for the low initiation voltage in the reciprocal pulse was that space charges which accumulated on the barrier surface during cable charging had an effect on field enhancement in the reactor after the first polarity reversal. High speed photographs of discharge light produced by the reciprocal pulse showed that the voltage oscillation caused by one switching induced alternate propagation of positive and negative streamers with a very high frequency. In measurements of NO concentration, the reciprocal pulse generator gave a better performance for NO removal ratio than the self-matched pulse generator even though the stored energy in the recipocal pulse generator was very low.

A study of dielectric breakdown along insulators surrounding conductors in liquid argon

DOE PAGES

Lockwitz, Sarah; Jostlein, Hans

2016-03-22

High voltage breakdown in liquid argon is an important concern in the design of liquid argon time projection chambers, which are often used as neutrino and dark matter detectors. We have made systematic measurements of breakdown voltages in liquid argon along insulators surrounding negative rod electrodes where the breakdown is initiated at the anode. The measurements were performed in an open cryostat filled with commercial grade liquid argon exposed to air, and not the ultra-pure argon required for electron drift. While not addressing all high voltage concerns in liquid argon, these measurements have direct relevance to the design of highmore » voltage feedthroughs especially for averting the common problem of flash-over breakdown. The purpose of these tests is to understand the effects of materials, of breakdown path length, and of surface topology for this geometry and setup. We have found that the only material-specific effects are those due to their permittivity. We have found that the breakdown voltage has no dependence on the length of the exposed insulator. Lastly, a model for the breakdown mechanism is presented that can help inform future designs.« less

Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors.

PubMed

Molinari, Alan; Hahn, Horst; Kruk, Robert

2018-01-01

The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La 0.74 Sr 0.26 MnO 3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V -1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm -2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A High‐Voltage and High‐Capacity Li1+xNi0.5Mn1.5O4 Cathode Material: From Synthesis to Full Lithium‐Ion Cells

PubMed Central

Mancini, Marilena; Gabrielli, Giulio; Kinyanjui, Michael; Kaiser, Ute; Wohlfahrt‐Mehrens, Margret

2016-01-01

Abstract We report Co‐free, Li‐rich Li1+xNi0.5Mn1.5O4 (0

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Fuzzy-driven energy storage system for mitigating voltage unbalance factor on distribution network with photovoltaic system

NASA Astrophysics Data System (ADS)

Wong, Jianhui; Lim, Yun Seng; Morris, Stella; Morris, Ezra; Chua, Kein Huat

2017-04-01

The amount of small-scaled renewable energy sources is anticipated to increase on the low-voltage distribution networks for the improvement of energy efficiency and reduction of greenhouse gas emission. The growth of the PV systems on the low-voltage distribution networks can create voltage unbalance, voltage rise, and reverse-power flow. Usually these issues happen with little fluctuation. However, it tends to fluctuate severely as Malaysia is a region with low clear sky index. A large amount of clouds often passes over the country, hence making the solar irradiance to be highly scattered. Therefore, the PV power output fluctuates substantially. These issues can lead to the malfunction of the electronic based equipment, reduction in the network efficiency and improper operation of the power protection system. At the current practice, the amount of PV system installed on the distribution network is constraint by the utility company. As a result, this can limit the reduction of carbon footprint. Therefore, energy storage system is proposed as a solution for these power quality issues. To ensure an effective operation of the distribution network with PV system, a fuzzy control system is developed and implemented to govern the operation of an energy storage system. The fuzzy driven energy storage system is able to mitigate the fluctuating voltage rise and voltage unbalance on the electrical grid by actively manipulates the flow of real power between the grid and the batteries. To verify the effectiveness of the proposed fuzzy driven energy storage system, an experimental network integrated with 7.2kWp PV system was setup. Several case studies are performed to evaluate the response of the proposed solution to mitigate voltage rises, voltage unbalance and reduce the amount of reverse power flow under highly intermittent PV power output.

Flexible $$I_{Q}\\!\\!-\\!\\!V$$ Scheme of a DFIG for Rapid Voltage Regulation of a Wind Power Plant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jinho; Muljadi, Eduard; Park, Jung -Wook

This paper proposes a flexible reactive current-to-voltage (I Q-V) scheme of a doubly-fed induction generator (DFIG) for the rapid voltage regulation of a wind power plant (WPP). In the proposed scheme, the WPP controller dispatches different voltage set points to the DFIGs depending on their rotor voltage margins. The DFIGs inject different reactive power with the flexible I Q-V schemes implemented in the rotor-side and grid-side converters. The I Q-V characteristic, which consists of the gain and width of a linear band and I Q capability, varies with time depending on the I Q capability of the converters and amore » voltage dip at the point of interconnection (POI). To increase the I Q capability during a fault, the active current is reduced in proportion to a voltage dip. If the I Q capability and/or the POI voltage dip are large, the I Q-V gain is set to be high, thereby providing rapid voltage regulation. To avoid an overvoltage after the fault clearance, a rapid I Q reduction scheme is implemented in the WPP and DFIG controllers. The performance of the proposed flexible scheme was verified under scenarios with various disturbances. In conclusion, the proposed scheme can help increase wind power penetration without jeopardizing voltage stability.« less

Flexible $$I_{Q}\\!\\!-\\!\\!V$$ Scheme of a DFIG for Rapid Voltage Regulation of a Wind Power Plant

DOE PAGES

Kim, Jinho; Muljadi, Eduard; Park, Jung -Wook; ...

2017-04-28

This paper proposes a flexible reactive current-to-voltage (I Q-V) scheme of a doubly-fed induction generator (DFIG) for the rapid voltage regulation of a wind power plant (WPP). In the proposed scheme, the WPP controller dispatches different voltage set points to the DFIGs depending on their rotor voltage margins. The DFIGs inject different reactive power with the flexible I Q-V schemes implemented in the rotor-side and grid-side converters. The I Q-V characteristic, which consists of the gain and width of a linear band and I Q capability, varies with time depending on the I Q capability of the converters and amore » voltage dip at the point of interconnection (POI). To increase the I Q capability during a fault, the active current is reduced in proportion to a voltage dip. If the I Q capability and/or the POI voltage dip are large, the I Q-V gain is set to be high, thereby providing rapid voltage regulation. To avoid an overvoltage after the fault clearance, a rapid I Q reduction scheme is implemented in the WPP and DFIG controllers. The performance of the proposed flexible scheme was verified under scenarios with various disturbances. In conclusion, the proposed scheme can help increase wind power penetration without jeopardizing voltage stability.« less

Automated System Tests High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Huston, Steven W.; Wendt, Isabel O.

1994-01-01

Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage.

PubMed

Venkatesan, Swaminathan; Ngo, Evan C; Chen, Qiliang; Dubey, Ashish; Mohammad, Lal; Adhikari, Nirmal; Mitul, Abu Farzan; Qiao, Qiquan

2014-06-21

Single and double junction solar cells with high open circuit voltage were fabricated using poly{thiophene-2,5-diyl-alt-[5,6-bis(dodecyloxy)benzo[c][1,2,5]thiadiazole]-4,7-diyl} (PBT-T1) blended with fullerene derivatives in different weight ratios. The role of fullerene loading on structural and morphological changes was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). The XRD and AFM measurements showed that a higher fullerene mixing ratio led to breaking of inter-chain packing and hence resulted in smaller disordered polymer domains. When the PBT-T1:PC60BM weight ratio was 1 : 1, the polymer retained its structural order; however, large aggregated domains formed, leading to poor device performance due to low fill factor and short circuit current density. When the ratio was increased to 1 : 2 and then 1 : 3, smaller amorphous domains were observed, which improved photovoltaic performance. The 1 : 2 blending ratio was optimal due to adequate charge transport pathways giving rise to moderate short circuit current density and fill factor. Adding 1,8-diiodooctane (DIO) additive into the 1 : 2 blend films further improved both the short circuit current density and fill factor, leading to an increased efficiency to 4.5% with PC60BM and 5.65% with PC70BM. These single junction solar cells exhibited a high open circuit voltage at ∼ 0.9 V. Photo-charge extraction by linearly increasing voltage (Photo-CELIV) measurements showed the highest charge carrier mobility in the 1 : 2 film among the three ratios, which was further enhanced by introducing the DIO. The Photo-CELIV measurements with varying delay times showed significantly higher extracted charge carrier density for cells processed with DIO. Tandem devices using P3HT:IC60BA as bottom cell and PBT-T1:PC60BM as top cell exhibited a high open circuit voltage of 1.62 V with 5.2% power conversion efficiency.

Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

PubMed Central

Anderson, William E.

1989-01-01

The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

Low-resistance strip sensors for beam-loss event protection

NASA Astrophysics Data System (ADS)

Ullán, M.; Benítez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; García, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A. A.; Sadrozinski, H. F.-W.

2014-11-01

AC-coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the "far" end of the strip from the punch-through structure leading to large voltages. We present here our developments to fabricate low-resistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.

Stress-dependent voltage offsets from polymer insulators used in rock mechanics and material testing

NASA Astrophysics Data System (ADS)

Carlson, G. G.; Dahlgren, R.; Vanderbilt, V. C.; Johnston, M. J.; Dunson, C.; Gray, A.; Freund, F.

2013-12-01

Dielectric insulators are used in a variety of laboratory settings when performing experiments in rock mechanics, petrology, and electromagnetic studies of rocks in the fields of geophysics, material science, and civil engineering. These components may be used to electrically isolate geological samples from the experimental equipment, to perform a mechanical compliance function between brittle samples and the loading equipment, to match ultrasonic transducers, or perform other functions. In many experimental configurations the insulators bear the full brunt of force applied to the sample but do not need to withstand high voltages, therefore the insulators are often thin sheets of mechanically tough polymers. From an instrument perspective, transduction from various types of mechanical perturbation has been qualitatively compared for a number of polymers [1, 2] and these error sources are readily apparent during high-impedance measurements if not mitigated. However even when following best practices, a force-dependent voltage signal still remains and its behavior is explored in this presentation. In this experiment two thin sheets (0.25 mm) of high-density polyethylene (HDPE) were set up in a stack, held alternately between three aluminum bars; this stack was placed on the platen of a 60T capacity hydraulic testing machine. The surface area, A, over which the force is applied to the PE sheets in this sandwich is roughly 40 square cm, each sheet forming a parallel-plate capacitor having roughly 320 pF [3], assuming the relative dielectric permittivity of PE is ~2.3. The outer two aluminum bars were connected to the LO input of the electrometer and the central aluminum bar was connected to the HI input of a Keithley model 617 electrometer. Once the stack is mechanically well-seated with no air gaps, the voltage offset is observed to be a linear function of the baseline voltage for a given change in applied force. For a periodically applied force of 66.7 kN the voltage offsets were measured as a function of initial voltage, and these data were fit with a linear function that was constrained to pass through the origin. The best fit solution had a correlation coefficient of R = 0.85 and a slope of approximately -0.0228 volts/volt. The voltage offset when normalized is demonstrated to be constant -2.28 % for both positive and negative polarities over nearly 3 orders of baseline voltage magnitude. From this, the voltage-force coefficient is derived to be -0.34 ppm/N. This correlates well to a first-order parallel plate capacitor model that assumes constant area, and small deformation such that the polymer may be mechanically modeled by a spring that obeys Hooke's law. This simple model predicts that the coefficient of proportionality is a function of Young's modulus E = 0.8 GPa and surface area of the insulator, theoretically -1/EA = -0.31 ppm/N. The outcome of this work is an improved insulator made from ultra-high molecular weight (UHMW) polyethylene and other approaches toward the minimization of and compensation for these experimental artifacts. References: [1] Keithley Instruments, Low level measurements handbook, 'Choosing the best insulator,' 2-11 (2004). [2] Ibid., 2-26. [3] A. Skumiel, 'How to transform mechanical work into electrical energy using a capacitor,' European Journal of Physics 32, 625-630 (2011).

Voltage gradient mapping and electrophysiologically guided cryoablation in children with AVNRT.

PubMed

Drago, Fabrizio; Battipaglia, Irma; Russo, Mario Salvatore; Remoli, Romolo; Pazzano, Vincenzo; Grifoni, Gino; Allegretti, Greta; Silvetti, Massimo Stefano

2018-04-01

Recently, voltage gradient mapping of Koch's triangle to find low-voltage connections, or 'voltage bridges', corresponding to the anatomic position of the slow pathway, has been introduced as a method to ablate atrioventricular nodal reentry tachycardia (AVNRT) in children. Thus, we aimed to assess the effectiveness of voltage mapping of Koch's triangle, combined with the search for the slow potential signal in 'low-voltage bridges', to guide cryoablation of AVNRT in children. From June 2015 to May 2016, 35 consecutive paediatric patients (mean age 12.1 ± 4.5 years) underwent 3D-guided cryoablation of AVNRT at our Institution. Fifteen children were enrolled as control group (mean age 14 ± 4 years). A voltage gradient mapping of Koch's triangle was obtained in all patients, showing low-voltage connections in all children with AVNRT but not in controls. Prior to performing cryoablation, we looked for the typical 'hump and spike' electrogram, generally considered to be representative of slow pathway potential within a low-voltage bridge. In all patients the 'hump and spike' electrogram was found inside bridges of low voltage. Focal or high-density linear lesions, extended or not, were delivered guided by low-voltage bridge visualization. Acute success rate was 100%, and no recurrence was reported at a mean follow-up of 8 ± 3 months. Voltage gradient mapping of Koch's triangle, combined with the search for the slow potential signal in low-voltage bridges, is effective in guiding cryoablation of AVNRT in paediatric patients, with a complete acute success rate and no AVNRT recurrences at mid-term follow-up.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.

PubMed

Smith, Casey; Qaisi, Ramy; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

PubMed

Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

2012-04-01

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (<5 V) pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Enhanced piezoelectric operation of NiO/GaN heterojunction generator by suppressed internal carrier screening

NASA Astrophysics Data System (ADS)

Jeong, Dae Kyung; Kang, Jin-Ho; Ha, Jun-Seok; Ryu, Sang-Wan

2017-10-01

A NiO/GaN heterojunction piezoelectric generator was fabricated, and the improvement in device performance was analyzed. The electrical properties of NiO were varied by regulating the gas environment during sputtering. An optimized NiO layer was adopted for high piezoelectric voltage generation. Internal carrier screening was revealed to be the dominant mechanism degrading the piezoelectric performance, necessitating the suppression of carrier screening. The highly resistive NiO layer was advantageous in the suppression of carrier transport across the junction that screened the piezoelectric field. The maximum piezoelectric voltage and current density values obtained were 7.55 V and 1.14 µA cm-2, respectively. The power obtained was sufficient to operate a light-emitting diode combined with a charging circuit.

Evaluation of a high power inverter for potential space applications

NASA Technical Reports Server (NTRS)

Guynes, B. V.; Lanier, J. R., Jr.

1976-01-01

The ADM-006 inverter discussed utilizes a unique method of using power switching circuits to produce three-phase low harmonic content voltages without any significant filtering. This method is referred to as the power center approach to inverter design and is explained briefly. The results are presented of tests performed by MSFC to evaluate inverter performance, especially when required to provide power to nonlinear loads such as half or full wave rectified loads with capacitive filtering. Test preocedures and results are described. These tests show that the power center inverter essentially met or exceeded all of claims excluding voltage regulation (3.9 percent versus specified 3.3 percent) and would be a good candidate for high power inverter applications such as may be found on Space Station, Spacelab, etc.

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

PubMed

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

The 77 K operation of a multi-resonant power converter

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

The liquid-nitrogen temperature (77 K) operation of a 55 W, 200 kHz, 48/28 V zero-voltage switching multi-resonant dc/dc converter designed with commercially available components is reported. Upon dipping the complete converter (power and control circuits) into liquid-nitrogen, the converter performance improved as compared to the room-temperature operation. The switching frequency, resonant frequency, and the characteristic impedance did not change significantly. Accordingly, the zero-voltage switching was maintained from no-load to full-load for the specified line variations. Cryoelectronics can provide high density power converters, especially for high power applications.

ADVANCED ELECTROSTATIC STIMULATION OF FABRIC FILTRATION: PERFORMANCE AND ECONOMICS

EPA Science Inventory

The paper discusses the performance and economics of advanced electrostatic stimulation of fabric filtration (AESFF), in which a high-voltage electrode is placed coaxially inside a filter bag to establish an electric field between the electrode and the bag surface. The electric f...

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Facile and Nonradiation Pretreated Membrane as a High Conductive Separator for Li-Ion Batteries.

PubMed

Li, Bao; Li, Yongjun; Dai, Dongmei; Chang, Kun; Tang, Hongwei; Chang, Zhaorong; Wang, Chunru; Yuan, Xiao-Zi; Wang, Haijiang

2015-09-16

Polyolefin membranes are widely used as separators in commercialized Li-ion batteries. They have less polarized surfaces compared with polarized molecules of electrolyte, leading to a poor wetting state for separators. Radiation pretreatments are often adopted to solve such a problem. Unfortunately, they can only activate several nanometers deep from the surface, which limits the performance improvement. Here we report a facile and scalable method to polarize polyolefin membranes via a chemical oxidation route. On the surfaces of pretreated membrane, layers of poly(ethylene oxide) and poly(acrylic acid) can easily be coated, thus resulting in a high Li-ion conductivity of the membrane. Assembled with this decorated separator in button cells, both high-voltage (Li1.2Mn0.54Co0.13Ni0.13O2) and moderate-voltage (LiFePO4) cathode materials show better electrochemical performances than those assembled with pristine polyolefin separators.

Development of an environmental high-voltage electron microscope for reaction science.

PubMed

Tanaka, Nobuo; Usukura, Jiro; Kusunoki, Michiko; Saito, Yahachi; Sasaki, Katuhiro; Tanji, Takayoshi; Muto, Shunsuke; Arai, Shigeo

2013-02-01

Environmental transmission electron microscopy and ultra-high resolution electron microscopic observation using aberration correctors have recently emerged as topics of great interest. The former method is an extension of the so-called in situ electron microscopy that has been performed since the 1970s. Current research in this area has been focusing on dynamic observation with atomic resolution under gaseous atmospheres and in liquids. Since 2007, Nagoya University has been developing a new 1-MV high voltage (scanning) transmission electron microscope that can be used to observe nanomaterials under conditions that include the presence of gases, liquids and illuminating lights, and it can be also used to perform mechanical operations to nanometre-sized areas as well as electron tomography and elemental analysis by electron energy loss spectroscopy. The new instrument has been used to image and analyse various types of samples including biological ones.

Investigation of Re-X glass ceramic for acceleration insulating columns

NASA Astrophysics Data System (ADS)

Faltens, A.; Rosenblum, S.

1985-05-01

In an induction linac the accelerating voltage appears along a voltage-graded vacuum insulator column which is a performance limiting and major cost component. Re-X glass ceramic insulators have the long-sought properties of allowing cast-in gradient electrodes, good breakdown characteristics, and compatibility with high vacuum systems. Re-X is a glass ceramic developed by General Electric for use in the manufacture of electrical apparatus, such as vacuum arc interrupters. We have examined vacuum outgassing behavior and voltage breakdown in vacuum and find excellent performance. The housings are in the shape of tubes with type 430 stainless steel terminations. Due to a matched coefficient of thermal expansion between metal and insulator, no vacuum leaks have resulted from any welding operation. The components should be relatively inexpensive to manufacture in large sizes and appear to be a very attractive accelerator column. We are planning to use a standard GE housing in our MBE-4 induction linac.

Research on laser detonation pulse circuit with low-power based on super capacitor

NASA Astrophysics Data System (ADS)

Wang, Hao-yu; Hong, Jin; He, Aifeng; Jing, Bo; Cao, Chun-qiang; Ma, Yue; Chu, En-yi; Hu, Ya-dong

2018-03-01

According to the demand of laser initiating device miniaturization and low power consumption of weapon system, research on the low power pulse laser detonation circuit with super capacitor. Established a dynamic model of laser output based on super capacitance storage capacity, discharge voltage and programmable output pulse width. The output performance of the super capacitor under different energy storage capacity and discharge voltage is obtained by simulation. The experimental test system was set up, and the laser diode of low power pulsed laser detonation circuit was tested and the laser output waveform of laser diode in different energy storage capacity and discharge voltage was collected. Experiments show that low power pulse laser detonation based on super capacitor energy storage circuit discharge with high efficiency, good transient performance, for a low power consumption requirement, for laser detonation system and low power consumption and provide reference light miniaturization of engineering practice.

IGZO TFT-based circuit with tunable threshold voltage by laser annealing

NASA Astrophysics Data System (ADS)

Huang, Xiaoming; Yu, Guang; Wu, Chenfei

2017-11-01

In this work, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved.

High-performance, low-voltage, and easy-operable bending actuator based on aligned carbon nanotube/polymer composites.

PubMed

Chen, Luzhuo; Liu, Changhong; Liu, Ke; Meng, Chuizhou; Hu, Chunhua; Wang, Jiaping; Fan, Shoushan

2011-03-22

In this work, we show that embedding super-aligned carbon nanotube sheets into a polymer matrix (polydimethylsiloxane) can remarkably reduce the coefficient of thermal expansion of the polymer matrix by two orders of magnitude. Based on this unique phenomenon, we fabricated a new kind of bending actuator through a two-step method. The actuator is easily operable and can generate an exceptionally large bending actuation with controllable motion at very low driving DC voltages (<700 V/m). Furthermore, the actuator can be operated without electrolytes in the air, which is superior to conventional carbon nanotube actuators. Proposed electrothermal mechanism was discussed and confirmed by our experimental results. The exceptional bending actuation performance together with easy fabrication, low-voltage, and controllable motion demonstrates the potential ability of using this kind of actuator in various applicable areas, such as artificial muscles, microrobotics, microsensors, microtransducers, micromanipulation, microcantilever for medical applications, and so on.

Performance prediction of electrohydrodynamic thrusters by the perturbation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shibata, H., E-mail: shibata@daedalus.k.u-tokyo.ac.jp; Watanabe, Y.; Suzuki, K.

2016-05-15

In this paper, we present a novel method for analyzing electrohydrodynamic (EHD) thrusters. The method is based on a perturbation technique applied to a set of drift-diffusion equations, similar to the one introduced in our previous study on estimating breakdown voltage. The thrust-to-current ratio is generalized to represent the performance of EHD thrusters. We have compared the thrust-to-current ratio obtained theoretically with that obtained from the proposed method under atmospheric air conditions, and we have obtained good quantitative agreement. Also, we have conducted a numerical simulation in more complex thruster geometries, such as the dual-stage thruster developed by Masuyama andmore » Barrett [Proc. R. Soc. A 469, 20120623 (2013)]. We quantitatively clarify the fact that if the magnitude of a third electrode voltage is low, the effective gap distance shortens, whereas if the magnitude of the third electrode voltage is sufficiently high, the effective gap distance lengthens.« less

Surface-protected LiCoO2 with ultrathin solid oxide electrolyte film for high-voltage lithium ion batteries and lithium polymer batteries

NASA Astrophysics Data System (ADS)

Yang, Qi; Huang, Jie; Li, Yejing; Wang, Yi; Qiu, Jiliang; Zhang, Jienan; Yu, Huigen; Yu, Xiqian; Li, Hong; Chen, Liquan

2018-06-01

Surface modification of LiCoO2 with the ultrathin film of solid state electrolyte of Li1.4Al0.4Ti1.6(PO4)3 (LATP) has been realized by a new and facile solution-based method. The coated LiCoO2 reveals enhanced structural and electrochemical stability at high voltage (4.5 V vs Li+/Li) in half-cell with liquid electrolyte. Transmission electron microscopy (TEM) images show that a dense LATP coating layer is covered on the surface of LiCoO2 uniformly with thickness of less than 20 nm. The LATP coating layer is proven to be able to prevent the direct contact between the cathode and the electrolyte effectively and thus to suppress the side reactions of liquid electrolyte with LiCoO2 surface at high charging voltage. As a result, dissolution of Co3+ has been largely suppressed over prolonged cycling as indicated by the X-ray photoelectron spectroscopy (XPS) measurements. Due to this surface passivating feature, the electrochemical performance of 0.5 wt% LATP modified LiCoO2 has also been evaluated in an all solid lithium battery with poly(ethylene oxide)-based polymer electrolyte. The cell exhibits 93% discharge capacity retention of the initial discharge capacity after 50 cycles at the charging cut-off voltage of 4.2 V, suggesting that the LATP coating layer is effective to suppress the oxidation of PEO at high voltage.

Physical phenomena in mercury ion thrusters

NASA Technical Reports Server (NTRS)

Wilbur, P. J.

1979-01-01

Experimental tests results demonstrating that reductions in screen grid thickness enhance the performance of ion thruster grids are presented. Shaping of the screen hole cross section is shown on the other hand not to affect performance substantially. The effect of the magnetic field in the vicinity of the hollow cathode on cathode performance is studied and test results are presented that show reductions in keeper voltages of a few volts can be realized by judicious applications of fields on the order of 100 gauss. The plasma downstream of a SERT 2 thruster operating without high voltage is studied. A model describing electron escape from the thruster under these conditions is discussed. A model defining the performance of the baffle aperture of an ion thruster is refined and experimental verification of the model is undertaken.

Lightweight concentrator module with 30 percent AM0 efficient GaAs/GaSb tandem cells

NASA Technical Reports Server (NTRS)

Avery, J. E.; Fraas, L. M.; Sundaram, V. S.; Mansoori, N.; Yerkes, J. W.; Brinker, D. J.; Curtis, H. B.; O'Neill, M. J.

1990-01-01

A concept is presented for an aerospace concentrator module with lightweight domed lenses and 30 percent AM0 efficient GaAs/GaSb tandem solar cell circuits. The performance of transparent GaAs cells is reviewed. NASA's high-altitude jet flight calibration data for recent GaSb cells assembled with bulk GaAs filters are reported, along with subsequent Boeing and NASA measurements of GaSb I-V performance at various light levels and temperatures. The expected performance of a basic two-terminal tandem concentrator circuit with three-to-one voltage matching is discussed. All of the necessary components being developed to assemble complete flight test coupons are shown. Straightforward interconnect and assembly techniques yield voltage matched circuits with near-optimum performance over a wide temperature range.

High voltage variable diameter insulator

DOEpatents

Vanacek, D.L.; Pike, C.D.

1982-07-13

A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... on power circuits with a phase-to-phase nominal voltage no greater than 15,000 volts; (3) Such...

Characterization and performance of high power iron(VI) ferrate batteries

NASA Astrophysics Data System (ADS)

Walz, Kenneth A.; Suyama, Amy N.; Suyama, Wendy E.; Sene, Jeosadaque J.; Zeltner, Walter A.; Armacanqui, Edgar M.; Roszkowski, Andrew J.; Anderson, Marc A.

In this paper we report on the high power discharge performance and impedance characteristics of potassium ferrate (K 2FeO 4) and barium ferrate (BaFeO 4) cathodes in zinc alkaline dry cells. The results show that if ferrate materials can be packaged to maximize the cathode surface area, they may offer superior performance over electrolytic manganese dioxide at operating voltages exceeding 1.6 V and currents as high as 100 mA/g of active material.

A New CuO-Fe2 O3 -Mesocarbon Microbeads Conversion Anode in a High-Performance Lithium-Ion Battery with a Li1.35 Ni0.48 Fe0.1 Mn1.72 O4 Spinel Cathode.

PubMed

Di Lecce, Daniele; Verrelli, Roberta; Campanella, Daniele; Marangon, Vittorio; Hassoun, Jusef

2017-04-10

A ternary CuO-Fe 2 O 3 -mesocarbon microbeads (MCMB) conversion anode was characterized and combined with a high-voltage Li 1.35 Ni 0.48 Fe 0.1 Mn 1.72 O 4 spinel cathode in a lithium-ion battery of relevant performance in terms of cycling stability and rate capability. The CuO-Fe 2 O 3 -MCMB composite was prepared by using high-energy milling, a low-cost pathway that leads to a crystalline structure and homogeneous submicrometrical morphology as revealed by XRD and electron microscopy. The anode reversibly exchanges lithium ions through the conversion reactions of CuO and Fe 2 O 3 and by insertion into the MCMB carbon. Electrochemical tests, including impedance spectroscopy, revealed a conductive electrode/electrolyte interface that enabled the anode to achieve a reversible capacity value higher than 500 mAh g -1 when cycled at a current of 120 mA g -1 . The remarkable stability of the CuO-Fe 2 O 3 -MCMB electrode and the suitable characteristics in terms of delivered capacity and voltage-profile retention allowed its use in an efficient full lithium-ion cell with a high-voltage Li 1.35 Ni 0.48 Fe 0.1 Mn 1.72 O 4 cathode. The cell had a working voltage of 3.6 V and delivered a capacity of 110 mAh g cathode -1 with a Coulombic efficiency above 99 % after 100 cycles at 148 mA g cathode -1 . This relevant performances, rarely achieved by lithium-ion systems that use the conversion reaction, are the result of an excellent cell balance in terms of negative-to-positive ratio, favored by the anode composition and electrochemical features. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quasi-Linear Circuit

NASA Technical Reports Server (NTRS)

Bradley, William; Bird, Ross; Eldred, Dennis; Zook, Jon; Knowles, Gareth

2013-01-01

This work involved developing spacequalifiable switch mode DC/DC power supplies that improve performance with fewer components, and result in elimination of digital components and reduction in magnetics. This design is for missions where systems may be operating under extreme conditions, especially at elevated temperature levels from 200 to 300 degC. Prior art for radiation-tolerant DC/DC converters has been accomplished utilizing classical magnetic-based switch mode converter topologies; however, this requires specific shielding and component de-rating to meet the high-reliability specifications. It requires complex measurement and feedback components, and will not enable automatic re-optimization for larger changes in voltage supply or electrical loading condition. The innovation is a switch mode DC/DC power supply that eliminates the need for processors and most magnetics. It can provide a well-regulated voltage supply with a gain of 1:100 step-up to 8:1 step down, tolerating an up to 30% fluctuation of the voltage supply parameters. The circuit incorporates a ceramic core transformer in a manner that enables it to provide a well-regulated voltage output without use of any processor components or magnetic transformers. The circuit adjusts its internal parameters to re-optimize its performance for changes in supply voltage, environmental conditions, or electrical loading at the output

Real-Time Nanoscale Open-Circuit Voltage Dynamics of Perovskite Solar Cells.

PubMed

Garrett, Joseph L; Tennyson, Elizabeth M; Hu, Miao; Huang, Jinsong; Munday, Jeremy N; Leite, Marina S

2017-04-12

Hybrid organic-inorganic perovskites based on methylammonium lead (MAPbI 3 ) are an emerging material with great potential for high-performance and low-cost photovoltaics. However, for perovskites to become a competitive and reliable solar cell technology their instability and spatial variation must be understood and controlled. While the macroscopic characterization of the devices as a function of time is very informative, a nanoscale identification of their real-time local optoelectronic response is still missing. Here, we implement a four-dimensional imaging method through illuminated heterodyne Kelvin probe force microscopy to spatially (<50 nm) and temporally (16 s/scan) resolve the voltage of perovskite solar cells in a low relative humidity environment. Local open-circuit voltage (V oc ) images show nanoscale sites with voltage variation >300 mV under 1-sun illumination. Surprisingly, regions of voltage that relax in seconds and after several minutes consistently coexist. Time-dependent changes of the local V oc are likely due to intragrain ion migration and are reversible at low injection level. These results show for the first time the real-time transient behavior of the V oc in perovskite solar cells at the nanoscale. Understanding and controlling the light-induced electrical changes that affect device performance are critical to the further development of stable perovskite-based solar technologies.

A new computer-controlled multi-channel high voltage supply system for GRACE instrumentation

NASA Astrophysics Data System (ADS)

Manna, A.; Chakrabarti, S.; Mukhopadhayay, P. K.

2002-03-01

The high energy gamma ray telescopes being set up by the Bhabha Atomic Research Institute Centre (BARC) at Mt. Abu, Rajasthan, as part of the GRACE project, require a very large number (~ 1000) of programmable high voltage power supplies for biasing photomultiplier tubes for the detection and characterization of the atmospheric Cerenkov events. These HV supplies need to be very compact, lightweight and rugged, as they will be mounted on the base of the moving telescope. This paper describes the design aspects of the overall HV system and the performance of the prototype HV modules developed for such applications. In the new design, the inverter switching frequency of the HV supplies has been increased threefold as compared to the earlier design, and surface mounted devices have been used to achieve overall size and weight reductions. The system consists of multiple HV modules, each containing 16 independently programmable HV supplies. Each HV module has an on-board micro-controller for doing control and supervisory functions and is interconnected via a serial 12C bus. The HV supplies have built in over voltage/current, thermal overload protections with output voltage readback and adjustable slew rate control facilities.

Nanopatterned textile-based wearable triboelectric nanogenerator.

PubMed

Seung, Wanchul; Gupta, Manoj Kumar; Lee, Keun Young; Shin, Kyung-Sik; Lee, Ju-Hyuck; Kim, Tae Yun; Kim, Sanghyun; Lin, Jianjian; Kim, Jung Ho; Kim, Sang-Woo

2015-01-01

Here we report a fully flexible, foldable nanopatterned wearable triboelectric nanogenerator (WTNG) with high power-generating performance and mechanical robustness. Both a silver (Ag)-coated textile and polydimethylsiloxane (PDMS) nanopatterns based on ZnO nanorod arrays on a Ag-coated textile template were used as active triboelectric materials. A high output voltage and current of about 120 V and 65 μA, respectively, were observed from a nanopatterned PDMS-based WTNG, while an output voltage and current of 30 V and 20 μA were obtained by the non-nanopatterned flat PDMS-based WTNG under the same compressive force of 10 kgf. Furthermore, very high voltage and current outputs with an average value of 170 V and 120 μA, respectively, were obtained from a four-layer-stacked WTNG under the same compressive force. Notably it was found there are no significant differences in the output voltages measured from the multilayer-stacked WTNG over 12 000 cycles, confirming the excellent mechanical durability of WTNGs. Finally, we successfully demonstrated the self-powered operation of light-emitting diodes, a liquid crystal display, and a keyless vehicle entry system only with the output power of our WTNG without any help of external power sources.

A complete electrical shock hazard classification system and its application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gordon, Lloyd; Cartelli, Laura; Graham, Nicole

Current electrical safety standards evolved to address the hazards of 60-Hz power that are faced primarily by electricians, linemen, and others performing facility and utility work. As a result, this leaves a substantial gap in the management of electrical hazards in Research and Development (R&D) and specialized high voltage and high power equipment. We find substantial use of direct current (dc) electrical energy, and the use of capacitors, inductors, batteries, and radiofrequency (RF) power. The electrical hazards of these forms of electricity and their systems are different than for 50/60 Hz power. This paper proposes a method of classifying allmore » of the electrical shock hazards found in all types of R&D and utilization equipment. Examples of the variation of these hazards from NFPA 70E include (a) high voltage can be harmless, if the available current is sufficiently low, (b) low voltage can be harmful if the available current/power is high, (c) high voltage capacitor hazards are unique and include severe reflex action, affects on the heart, and tissue damage, and (d) arc flash hazard analysis for dc and capacitor systems are not provided in existing standards. This work has led to a comprehensive electrical hazard classification system that is based on various research conducted over the past 100 years, on analysis of such systems in R&D, and on decades of experience. Lastly, the new comprehensive electrical shock hazard classification system uses a combination of voltage, shock current available, fault current available, power, energy, and waveform to classify all forms of electrical hazards.« less

A complete electrical shock hazard classification system and its application

DOE PAGES

Gordon, Lloyd; Cartelli, Laura; Graham, Nicole

2018-02-08

Current electrical safety standards evolved to address the hazards of 60-Hz power that are faced primarily by electricians, linemen, and others performing facility and utility work. As a result, this leaves a substantial gap in the management of electrical hazards in Research and Development (R&D) and specialized high voltage and high power equipment. We find substantial use of direct current (dc) electrical energy, and the use of capacitors, inductors, batteries, and radiofrequency (RF) power. The electrical hazards of these forms of electricity and their systems are different than for 50/60 Hz power. This paper proposes a method of classifying allmore » of the electrical shock hazards found in all types of R&D and utilization equipment. Examples of the variation of these hazards from NFPA 70E include (a) high voltage can be harmless, if the available current is sufficiently low, (b) low voltage can be harmful if the available current/power is high, (c) high voltage capacitor hazards are unique and include severe reflex action, affects on the heart, and tissue damage, and (d) arc flash hazard analysis for dc and capacitor systems are not provided in existing standards. This work has led to a comprehensive electrical hazard classification system that is based on various research conducted over the past 100 years, on analysis of such systems in R&D, and on decades of experience. Lastly, the new comprehensive electrical shock hazard classification system uses a combination of voltage, shock current available, fault current available, power, energy, and waveform to classify all forms of electrical hazards.« less

Modular, Reconfigurable, High-Energy Technology Development

NASA Technical Reports Server (NTRS)

Carrington, Connie; Howell, Joe

2006-01-01

The Modular, Reconfigurable High-Energy (MRHE) Technology Demonstrator project was to have been a series of ground-based demonstrations to mature critical technologies needed for in-space assembly of a highpower high-voltage modular spacecraft in low Earth orbit, enabling the development of future modular solar-powered exploration cargo-transport vehicles and infrastructure. MRHE was a project in the High Energy Space Systems (HESS) Program, within NASA's Exploration Systems Research and Technology (ESR&T) Program. NASA participants included Marshall Space Flight Center (MSFC), the Jet Propulsion Laboratory (JPL), and Glenn Research Center (GRC). Contractor participants were the Boeing Phantom Works in Huntsville, AL, Lockheed Martin Advanced Technology Center in Palo Alto, CA, ENTECH, Inc. in Keller, TX, and the University of AL Huntsville (UAH). MRHE's technical objectives were to mature: (a) lightweight, efficient, high-voltage, radiation-resistant solar power generation (SPG) technologies; (b) innovative, lightweight, efficient thermal management systems; (c) efficient, 100kW-class, high-voltage power delivery systems from an SPG to an electric thruster system; (d) autonomous rendezvous and docking technology for in-space assembly of modular, reconfigurable spacecraft; (e) robotic assembly of modular space systems; and (f) modular, reconfigurable distributed avionics technologies. Maturation of these technologies was to be implemented through a series of increasingly-inclusive laboratory demonstrations that would have integrated and demonstrated two systems-of-systems: (a) the autonomous rendezvous and docking of modular spacecraft with deployable structures, robotic assembly, reconfiguration both during assembly and (b) the development and integration of an advanced thermal heat pipe and a high-voltage power delivery system with a representative lightweight high-voltage SPG array. In addition, an integrated simulation testbed would have been developed containing software models representing the technologies being matured in the laboratory demos. The testbed would have also included models for non-MRHE developed subsystems such as electric propulsion, so that end-to-end performance could have been assessed. This paper presents an overview of the MRHE Phase I activities at MSFC and its contractor partners. One of the major Phase I accomplishments is the assembly demonstration in the Lockheed Martin Advanced Technology Center (LMATC) Robot-Satellite facility, in which three robot-satellites successfully demonstrated rendezvous & docking, self-assembly, reconfiguration, adaptable GN&C, deployment, and interfaces between modules. Phase I technology maturation results from ENTECH include material recommendations for radiation hardened Stretched Lens Array (SLA) concentrator lenses, and a design concept and test results for a hi-voltage PV receiver. UAH's accomplishments include Supertube heatpipe test results, which support estimates of thermal conductivities at 30,000 times that of an equivalent silver rod. MSFC performed systems trades and developed a preliminary concept design for a 100kW-class modular reconfigurable solar electric propulsion transport vehicle, and Boeing Phantom Works in Huntsville performed assembly and rendezvous and docking trades. A concept animation video was produced by SAIC, wllich showed rendezvous and docking and SLA-square-rigger deployment in LEO.

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current.

PubMed

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

NASA Astrophysics Data System (ADS)

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Spacecraft Charging Current Balance Model Applied to High Voltage Solar Array Operations

NASA Technical Reports Server (NTRS)

Willis, Emily M.; Pour, Maria Z. A.

2016-01-01

Spacecraft charging induced by high voltage solar arrays can result in power losses and degradation of spacecraft surfaces. In some cases, it can even present safety issues for astronauts performing extravehicular activities. An understanding of the dominant processes contributing to spacecraft charging induced by solar arrays is important to current space missions, such as the International Space Station, and to any future space missions that may employ high voltage solar arrays. A common method of analyzing the factors contributing to spacecraft charging is the current balance model. Current balance models are based on the simple idea that the spacecraft will float to a potential such that the current collecting to the surfaces equals the current lost from the surfaces. However, when solar arrays are involved, these currents are dependent on so many factors that the equation becomes quite complicated. In order for a current balance model to be applied to solar array operations, it must incorporate the time dependent nature of the charging of dielectric surfaces in the vicinity of conductors1-3. This poster will present the factors which must be considered when developing a current balance model for high voltage solar array operations and will compare results of a current balance model with data from the Floating Potential Measurement Unit4 on board the International Space Station.

Transmission line component testing for the ITER Ion Cyclotron Heating and Current Drive System

NASA Astrophysics Data System (ADS)

Goulding, Richard; Bell, G. L.; Deibele, C. E.; McCarthy, M. P.; Rasmussen, D. A.; Swain, D. W.; Barber, G. C.; Barbier, C. N.; Cambell, I. H.; Moon, R. L.; Pesavento, P. V.; Fredd, E.; Greenough, N.; Kung, C.

2014-10-01

High power RF testing is underway to evaluate transmission line components for the ITER Ion Cyclotron Heating and Current Drive System. The transmission line has a characteristic impedance Z0 = 50 Ω and a nominal outer diameter of 305 mm. It is specified to carry up to 6 MW at VSWR = 1.5 for 3600 s pulses, with transient voltages up to 40 kV. The transmission line is actively cooled, with turbulent gas flow (N2) used to transfer heat from the inner to outer conductor, which is water cooled. High voltage and high current testing of components has been performed using resonant lines generating steady state voltages of 35 kV and transient voltages up to 60 kV. A resonant ring, which has operated with circulating power of 6 MW for 1 hr pulses, is being used to test high power, low VSWR operation. Components tested to date include gas barriers, straight sections of various lengths, and 90 degree elbows. Designs tested include gas barriers fabricated from quartz and aluminum nitride, and transmission lines with quartz and alumina inner conductor supports. The latest results will be presented. This manuscript has been authored by UT-Battelle, LLC, under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy.

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

PubMed Central

Xiang, Lanyi; Wang, Wei; Xie, Wenfa

2016-01-01

Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V−1 s−1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V. PMID:27824101

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Jin Yu; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor inmore » series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.« less

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

High Performance Crystalline Organic Transistors and Circuit

DTIC Science & Technology

2009-10-14

this material into pentacene -based OFETs, low voltage operation is possible. 3 Figure 1: Device structure for a low voltage pentacene OFET...issues with the first SiO Z OPentacene Au Pentacene ZrO2 AuPd SiO2 4 film. Bilayer dielectrics exhibit lower defect-related leakage...effects, as pinholes or other defects in one layer may be isolated by the other layer. 350 Å of pentacene was thermally evaporated on the ZrO2 dielectric

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

PubMed

Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong

2017-08-16

In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10 5 ), excellent cyclic endurance (>10 3 ), and long retention time (>10 4 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.