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Sample records for perpendicular magnetic films

  1. Fabrication of L10-MnAl perpendicularly magnetized thin films for perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Hosoda, Masaki; Oogane, Mikihiko; Kubota, Miho; Kubota, Takahide; Saruyama, Haruaki; Iihama, Satoshi; Naganuma, Hiroshi; Ando, Yasuo

    2012-04-01

    Structural and magnetic properties of MnAl thin films with different composition, growth temperature, and post-annealing temperature were investigated. The optimum condition for fabrication of L10-MnAl perpendicularly magnetized thin film deposited on Cr-buffered MgO single crystal substrate was revealed. The results of x ray diffraction indicated that the MnAl films annealed at proper temperature had a (001)-orientation and L10-ordered structure. The L10-ordered films were perpendicularly magnetized and had a large perpendicular anisotropy. In addition, low surface roughness was achieved. For the optimized fabrication condition, the saturation magnetization Ms of 600 emu/cm3 and perpendicular magnetic anisotropy Ku of 1.0 × 107 erg/cm3 was obtained using the Mn48Al52 target at deposition temperature of 200 °C and post-annealing temperature of 450 °C.

  2. Ferromagnetic resonance linewidth in ultrathin films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Beaujour, J.-M.; Ravelosona, D.; Tudosa, I.; Fullerton, E. E.; Kent, A. D.

    2009-11-01

    Transition-metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and Permalloy (NiFe) thin films. A broadband FMR setup has been used to investigate the origin of the enhanced linewidth in a material in which the PMA could be systematically reduced by irradiation with Helium ions: Ni∣Co multilayers. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane. Irradiation of the film with Helium ions decreases the PMA and the distribution of PMA parameters, leading to a large reduction in the FMR linewidth for in-plane magnetization. These results suggest that fluctuations in PMA lead to a large two magnon scattering contribution to the linewidth for in-plane magnetization and establish that the Gilbert damping is enhanced in such materials ( α≈0.04 , compared to α≈0.002 for pure Fe).

  3. Magnetization reversal mechanism of Nd-Fe-B films with perpendicular magnetic anisotropy

    SciTech Connect

    Liu Xiaoxi; Ishida, Go; Morisako, Akimitsu

    2011-04-01

    The microstructure and magnetic properties of Nd-Fe-B films with thicknesses from 100 nm to 3 nm have been investigated. All the films show excellent perpendicular magnetic anisotropy with a squareness ratio of 1 in the perpendicular direction and almost zero coercivity in the in-plane direction. Of particular interest is that the initial magnetization curves sensitively depended on the film thickness. Films thicker than 15 nm show steep initial magnetization curve. Although the films have coercivities larger than 21 kOe, the films can be fully magnetized from the thermally demagnetized state with a field as small as 5 kOe. With the decrease of film thickness to 5 nm, the initial magnetization curve becomes flat. The evolution of initial magnetization curves with film thickness can be understood by the microstructure of the films. Films with thickness of 15 nm show close-packed grains without any intergranular phases. Such microstructures lead to steep initial magnetization curves. On the other hand, when the film thickness decreased to 3 nm, the film thickness became nonuniform. Such microstructure leads to flat initial magnetization curves.

  4. Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs

    NASA Astrophysics Data System (ADS)

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-01

    Perpendicularly magnetized τ-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm3, perpendicular magnetic anisotropy constant of 13.65 Merg/cm3, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  5. Fast magnetization precession for perpendicularly magnetized MnAlGe epitaxial films with atomic layered structures

    NASA Astrophysics Data System (ADS)

    Mizukami, S.; Sakuma, A.; Kubota, T.; Kondo, Y.; Sugihara, A.; Miyazaki, T.

    2013-09-01

    Epitaxial growth and magnetization precessional dynamics for tetragonal MnAlGe films are investigated. The films are grown on MgO (100) with c axis parallel to the film normal and well-ordered layered structures. The film exhibits rectangular hysteresis loop with perpendicular magnetic anisotropy constant of 4.7 Merg/cm3 and saturation magnetization of 250 emu/cm3. Magnetization precession with precession frequency of ˜100 GHz is observed by time-resolved magneto-optical Kerr effect. Further, the Gilbert damping constant is found to be less than ˜0.05, which is much larger than that obtained using the first principles calculations.

  6. Selective-resputtering-induced perpendicular magnetic anisotropy in amorphous TbFe films.

    PubMed

    Harris, V G; Pokhil, T

    2001-08-06

    Perpendicular magnetic anisotropy energy in rf magnetron sputtered amorphous TbFe films is measured to increase exponentially with pair-order anisotropy induced by the selective resputtering of surface adatoms during film growth.

  7. Recent progress in perpendicularly magnetized Mn-based binary alloy films

    NASA Astrophysics Data System (ADS)

    Zhu, Li-Jun; Nie, Shuai-Hua; Zhao, Jian-Hua

    2013-11-01

    In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal MnxGa and MnxAl thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and permanent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxAl with strong perpendicular magnetic anisotropy. Then, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxAl respectively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

  8. The magnetization processes and critical transition in a nanogranular magnetic film with perpendicular anisotropy.

    PubMed

    Kalita, V M; Lozenko, A F; Ryabchenko, S M; Los, A V; Sitnikov, A V; Stognei, O V

    2013-02-13

    The mechanisms and properties of the equilibrium magnetization process for nanogranular films with perpendicular anisotropy placed in a tilted magnetic field are considered. The contributions of the effects of canting and flipping of the granules' magnetic moments to the process of film magnetization are studied. A critical behavior of the film magnetization at the transition, induced by a tilted magnetic field, from a state with non-uniform orientation of the granules' magnetic moments to one with a similar orientation is revealed. The results obtained within the two-level model of the orientation of the particles' magnetic moments are in good agreement with the experimental data for Co-Al(2)O(3) (61 at.% Co) granular film. The perpendicular anisotropy of the granules in this film originates mainly from their elongated shape. It is shown that in the non-uniform state the magnetostatic energy of a granular film with similarly oriented elongated granules can be described by the sum of contributions of two types: quasi-single-granular and quasi-film. The effective constant of the single-particle anisotropy of the granules in this case turns out to be dependent on the factor of volume filling of the film by granules, but not on its magnetization.

  9. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Pramanik, Tanmoy; Roy, Anupam; Dey, Rik; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C. P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

    2017-09-01

    We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

  10. Magnetic Thin Films for Perpendicular Magnetic Recording Systems

    NASA Astrophysics Data System (ADS)

    Sugiyama, Atsushi; Hachisu, Takuma; Osaka, Tetsuya

    In the advanced information society of today, information storage technology, which helps to store a mass of electronic data and offers high-speed random access to the data, is indispensable. Against this background, hard disk drives (HDD), which are magnetic recording devices, have gained in importance because of their advantages in capacity, speed, reliability, and production cost. These days, the uses of HDD extend not only to personal computers and network servers but also to consumer electronics products such as personal video recorders, portable music players, car navigation systems, video games, video cameras, and personal digital assistances.

  11. Magnetic properties of ultrathin tetragonal Heusler D022-Mn3Ge perpendicular-magnetized films

    NASA Astrophysics Data System (ADS)

    Sugihara, A.; Suzuki, K. Z.; Miyazaki, T.; Mizukami, S.

    2015-05-01

    We investigated the crystal structure and magnetic properties of Manganese-germanium (Mn3Ge) films having the tetragonal D022 structure, with varied thicknesses (5-130 nm) prepared on chromium (Cr)-buffered single crystal MgO(001) substrates. A crystal lattice elongation in the in-plane direction, induced by the lattice mismatch between the D022-Mn3Ge and the Cr buffer layer, increased with decreasing thickness of the D022-Mn3Ge layer. The films exhibited clear magnetic hysteresis loops with a squareness ratio close to unity, and a step-like magnetization reversal even at a 5-nm thickness under an external field perpendicular to the film's plane. The uniaxial magnetic anisotropy constant of the films showed a reduction to less than 10 Merg/cm3 in the small thickness range (≤20 nm), likely due to the crystal lattice elongation in the in-plane direction.

  12. Sequential assembly of phototunable ferromagnetic ultrathin films with perpendicular magnetic anisotropy.

    PubMed

    Suda, Masayuki; Einaga, Yasuaki

    2009-01-01

    Getting organized: Assemblies of ferromagnetic FePt nanoparticles were generated with large perpendicular magnetic anisotropy by a magnetic-field-assisted layer-by-layer method, and subsequently layer-by-layer films consisting of L1(0)-FePt nanoparticles and organic polymers were prepared. These films are phototunable when photochromic molecules are used as polymer layers.

  13. Thermal Stability of Magnetic States in Circular Thin-Film Nanomagnets with Large Perpendicular Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Chaves-O'Flynn, Gabriel

    The scaling of the energy barrier to magnetization reversal in thin-film nanomagnets with perpendicular magnetization as a function of their lateral size is of great interest and importance for high-density magnetic random access memory devices. Experimental studies of such elements show either a quadratic or linear dependence of the energy barrier on element diameter. I will discuss a theoretical model we developed to determine the micromagnetic configurations that set the energy barrier for thermally activated reversal of a thin disk with perpendicular magnetic anisotropy as a function of disk diameter. We find a critical length in the problem that is set by the exchange and effective perpendicular magnetic anisotropy energies, with the latter including the size dependence of the demagnetization energy. For diameters smaller than this critical length, the reversal occurs by nearly coherent magnetization rotation and the energy barrier scales with the square of the diameter normalized to the critical length (for fixed film thickness), while for larger diameters, the transition state has a domain wall, and the energy barrier depends linearly on the normalized diameter. Simple analytic expressions are derived for these two limiting cases and verified using full micromagnetic simulations with the string method. Further, the effect of an applied field is considered and shown to lead to a plateau in the energy barrier versus diameter dependence at large diameters. Based on these finding I discuss the prospects and material challenges in the scaling of magnetic memory devices based on thin films with strong perpendicular magnetic anisotropy. In collaboration with G. Wolf, J. Z. Sun and A. D. Kent. Supported by NSF-DMR-1309202 and in part by Spin Transfer Technologies Inc. and the Nanoelectronics Research Initiative through the Institute for Nanoelectronics Discovery and Exploration.

  14. Study of nanocrystalline thin cobalt films with perpendicular magnetic anisotropy obtained by thermal evaporation

    NASA Astrophysics Data System (ADS)

    Kozłowski, Witold; Balcerski, Józef; Szmaja, Witold

    2017-02-01

    We have performed a detailed investigation of the morphological and magnetic domain structures of nanocrystalline thin cobalt films with perpendicular magnetic anisotropy. The films were thermally evaporated at an incidence angle of 0° in a vacuum of about 10-5 mbar and possessed thicknesses in the range from 60 nm to 100 nm. The films were studied by X-ray photoelectron spectroscopy (XPS), electron diffraction of transmission electron microscopy (TEM), atomic force microscopy (AFM), magnetic force microscopy (MFM) and the Fresnel mode of TEM. The films are polycrystalline and consist of very densely packed grains with sizes at the nanometer range. The grains are roundish in shape and generally exhibit no geometric alignment. The films are mainly composed of the hexagonal close-packed (HCP) phase of cobalt and possess preferential orientation of the cobalt grains with the hexagonal axis perpendicular to the film surface. 70 nm thick films and thicker have fully perpendicular magnetization, while 60 nm thick films possess clearly dominating perpendicular magnetization component. The magnetic domain structure is in the form of stripe domains forming a maze pattern. When the film thickness increases from 60 nm to 100 nm, the average grain size increases from 28.9 nm to 31.5 nm and the average domain width increases from 79.4 nm to 98.7 nm.

  15. Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; Demann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-09-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

  16. Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy.

    PubMed

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J S; Porod, Wolfgang; Field, Stuart B; Tang, Jinke; Marconi, Mario C; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-09-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

  17. Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

    DOE PAGES

    Li, Peng; Liu, Tao; Chang, Houchen; ...

    2016-09-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down statesmore » of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. Furthermore, it can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.« less

  18. Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

    SciTech Connect

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-09-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. Furthermore, it can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

  19. Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

    PubMed Central

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-01-01

    As an in-plane charge current flows in a heavy metal film with spin–orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin–orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field. PMID:27581060

  20. Perpendicular magnetic properties of CoCr films on GaAs

    NASA Astrophysics Data System (ADS)

    Manago, T.; Kuramochi, H.; Akinaga, H.

    2005-01-01

    CoCr films were deposited on three types of GaAs substrates, GaAs(001), GaAs(111), and Al oxide/GaAs(001). The perpendicular magnetic properties were investigated by magneto-optical Kerr-effect measurements. The direct deposition of the CoCr film on the GaAs substrate did not show any perpendicular magnetic properties. This fact indicates that the lattice distortion influenced by the GaAs lattice suppresses the perpendicular magnetism. The CoCr film on the Al oxide layer showed a tilted squarelike hysteresis loop. The thickness dependence of the hysteresis loop and the magnetic force microscopy showed that the onset thickness of ferromagnetism was 6.5nm. The domain size of the CoCr films monotonously decreases with the increasing thickness (6.5-75nm).

  1. Stability of the perpendicular magnetic anisotropy of ultrathin Ni films on Cu(100) upon multiple magnetization reversals.

    SciTech Connect

    Lu, X.; Berger, A.; Wuttig, M.; Materials Science Division; Inst. fur Grenzflachenforschung und Vakuumphysik; I. Physikalisches Inst. der RWTH Aachen

    2001-01-01

    Ultrathin Ni films with perpendicular magnetic anisotropy were deposited on Cu(100) at room temperature. The magnetic properties of the films were measured upon multiple magnetization reversals in an alternating magnetic field using the magneto-optic Kerr effect. All magnetic properties remain virtually constant for up to 10{sup 6} magnetization reversals for all films studied. This finding is supported by a simple theoretical model.

  2. Magnetic stripes and holes: Complex domain patterns in perforated films with weak perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Valdés-Bango, F.; Vélez, M.; Alvarez-Prado, L. M.; Alameda, J. M.; Martín, J. I.

    2017-05-01

    Hexagonal antidot arrays have been patterned on weak perpendicular magnetic anisotropy NdCo films by e-beam lithography and lift off. Domain structure has been characterized by Magnetic Force Microscopy at remanence. On a local length scale, of the order of stripe pattern period, domain configuration is controlled by edge effects within the stripe pattern: stripe domains meet the hole boundary at either perpendicular or parallel orientation. On a longer length scale, in-plane magnetostatic effects dominate the system: clear superdomains are observed in the patterned film with average in-plane magnetization along the easy directions of the antidot array, correlated over several antidot array cells.

  3. Magnetic properties and microstructure of L10-FePt/AlN perpendicular nanocomposite films

    NASA Astrophysics Data System (ADS)

    Feng, C.; Zhang, E.; Xu, C. C.; Li, N.; Jiang, Y.; Yu, G. H.; Li, B. H.

    2011-09-01

    Based on interfacial manipulation of a MgO (100) substrate and non-magnetic AlN compound, L10-FePt/AlN perpendicular nanocomposite films were designed and prepared. Systematic studies on magnetic properties and microstructure of the films show that the MgO substrate controls crystal orientation of the FePt lattice and induces perpendicular magnetic anisotropy (PMA). The AlN compound helps to control the island growth mode and acts as isolators of FePt islands to pin the sites of FePt domains, resulting in manipulation of coercivity and magnetic exchange interaction of the films. Moreover, PMA of the film was optimized by appropriately decreasing film thickness or increasing substrate temperature.

  4. Field orientation dependence of magnetization reversal in thin films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Fallarino, Lorenzo; Hovorka, Ondrej; Berger, Andreas

    2016-08-01

    The magnetization reversal process of hexagonal-close-packed (hcp) (0001) oriented Co and C o90R u10 thin films with perpendicular magnetic anisotropy (PMA) has been studied as a function of temperature and applied magnetic field angle. Room temperature pure cobalt exhibits two characteristic reversal mechanisms. For angles near in-plane field orientation, the magnetization reversal proceeds via instability of the uniform magnetic state, whereas in the vicinity of the out-of-plane (OP) orientation, magnetization inversion takes place by means of domain nucleation. Temperature dependent measurements enable the modification of the magnetocrystalline anisotropy and reveal a gradual disappearance of the domain nucleation process during magnetization reversal for elevated temperatures. Ultimately, this suppression of the domain nucleation process leads to the exclusive occurrence of uniform state instability reversal for all field orientations at sufficiently high temperature. Comparative magnetic measurements of C o90R u10 alloy samples allow the identification and confirmation of the high temperature remanent magnetization state of cobalt as an OP stripe domain state despite the reduction of magnetocrystalline anisotropy. Detailed micromagnetic simulations supplement the experimental results and corroborate the physical understanding of the temperature dependent behavior. Moreover, they enable a comprehensive identification of the complex energy balance in magnetic films with PMA, for which three different magnetic phases occur for sufficiently high anisotropy values, whose coexistence point is tricritical in nature.

  5. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films.

    PubMed

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H B; Wang, J; Ma, B; Jin, Q Y

    2015-07-20

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  6. Magnetization damping of an L10-FeNi thin film with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ogiwara, Misako; Iihama, Satoshi; Seki, Takeshi; Kojima, Takayuki; Mizukami, Shigemi; Mizuguchi, Masaki; Takanashi, Koki

    2013-12-01

    We studied on the magnetic damping constants (α) for L10-FeNi and disordered FeNi employing three kinds of measurement methods. An L10-FeNi thin film exhibited high perpendicular magnetic anisotropy of 7.1 × 106 erg cm-3. At magnetic fields (H) lower than 2 kOe, α was estimated to be 0.091 ± 0.003. However, it was reduced down to 0.013 ± 0.001 with H, indicating that extrinsic contributions enhance α. The intrinsic α = 0.013 ± 0.001 was comparable to α = 0.009 ± 0.002 for the disordered FeNi. This suggests that L10-FeNi is a candidate achieving high magnetic anisotropy and low magnetization damping simultaneously.

  7. Determination of intrinsic damping of perpendicularly magnetized ultrathin films from time-resolved precessional magnetization measurements

    NASA Astrophysics Data System (ADS)

    Capua, Amir; Yang, See-hun; Phung, Timothy; Parkin, Stuart S. P.

    2015-12-01

    Magnetization dynamics are strongly influenced by damping, namely, the loss of spin angular momentum from the magnetic system to the lattice. An "effective" damping constant αeff is often determined experimentally from the spectral linewidth of the free induction decay of the magnetization after the system is excited to its nonequilibrium state. Such an αeff, however, reflects both intrinsic damping as well as inhomogeneous broadening that arises, for example, from spatial variations of the anisotropy field. In this paper, we compare measurements of the magnetization dynamics in ultrathin nonepitaxial films having perpendicular magnetic anisotropy using two different techniques, time-resolved magneto-optical Kerr effect (TRMOKE) and hybrid optical-electrical ferromagnetic resonance (OFMR). By using an external magnetic field that is applied at very small angles to the film plane in the TRMOKE studies, we develop an explicit closed-form analytical expression for the TRMOKE spectral linewidth and show how this can be used to reliably extract the intrinsic Gilbert damping constant. The damping constant determined in this way is in excellent agreement with that determined from the OFMR method on the same samples. Our studies indicate that the asymptotic high-field approach that is often used in the TRMOKE method to distinguish the intrinsic damping from the effective damping may result in significant error, because such high external magnetic fields are required to make this approach valid that they are out of reach. The error becomes larger at lower intrinsic damping constants and thus may account for the anomalously high damping constants that are often reported in TRMOKE studies. In conventional ferromagnetic resonance (FMR) studies, inhomogeneous contributions can be readily distinguished from intrinsic damping contributions by studying the magnetic field dependence of the FMR linewidth. Using an analogous approach, we show how reliable values of the intrinsic

  8. CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Fukami, Shunsuke; Sato, Hideo; Yamanouchi, Michihiko; Ikeda, Shoji; Ohno, Hideo

    2013-07-01

    We investigate the magnetic properties of CoNi and CoPt films prepared by an alternate monoatomic layer deposition and discuss the possible existence of a metastable superlattice structure. We find that, as has been reported for the CoPt and CoPd films, the CoNi film also exhibits a perpendicular magnetic anisotropy when the monoatomic Co and Ni layers are stacked alternately, suggesting the possible formation of superlattice structure. Since the CoNi film contains neither noble nor rare-earth metals, it should be an attractive material system for applications.

  9. Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

    SciTech Connect

    Yanagihara, H. Utsumi, Y.; Niizeki, T. Inoue, J.; Kita, Eiji

    2014-05-07

    We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of Co{sub x}Fe{sub 3–x}O{sub 4}(001) epitaxial films (x = 0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant K{sub u} are strongly dependent on the reactive gas (O{sub 2}) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of Co{sub x}Fe{sub 3–x}O{sub 4} epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.

  10. Sputtering of cobalt film with perpendicular magnetic anisotropy on disorder-free graphene

    SciTech Connect

    Jamali, Mahdi; Lv, Yang; Zhao, Zhengyang; Wang, Jian-Ping

    2014-10-15

    Growth of thin cobalt film with perpendicular magnetic anisotropy has been investigated on pristine graphene for spin logic and memory applications. By reduction of the kinetic energy of the sputtered atoms using indirect sputtered deposition, deposition induced defects in the graphene layer have been controlled. Cobalt film on graphene with perpendicular magnetic anisotropy has been developed. Raman spectroscopy of the graphene surface shows very little disorder induced in the graphene by the sputtering process. In addition, upon increasing the cobalt film thickness, the disorder density increases on the graphene and saturates for thicknesses of Co layers above 1 nm. The AFM image indicates a surface roughness of about 0.86 nm. In addition, the deposited film forms a granular structure with a grain size of about 40 nm.

  11. Perpendicular Magnetic Anisotropy in Ultrathin Co/Ni Multilayer Films Studies with Ferromagnetic Resonance and Magnetic X-Ray Microspectroscopy

    DTIC Science & Technology

    2012-06-28

    fields (approx 1 T) the Py magnetization will rotate out of the film plane and may effect the FMR measurement of the Co9Ni multilayer . However, no or...REPORT Perpendicular magnetic anisotropy in ultrathin Co|Ni multilayer films studied with ferromagnetic resonance and magnetic x-ray microspectroscopy...14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Ferromagnetic resonance ( FMR ) spectroscopy, x-ray magnetic circular dichroism (XMCD) spectroscopy and

  12. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    NASA Astrophysics Data System (ADS)

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Ohkubo, Tadakatsu; Kasai, Shinya; Mitani, Seiji; Hono, Kazuhiro

    2015-07-01

    Perpendicularly magnetized flat thin films of antiperovskite Mn67Ga24N9 were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn70Ga30 target. The films showed a saturation magnetization of 80 -100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1-0.2 MJ/m3, and a Curie temperature of 660-740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn3GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D022-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  13. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-07-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  14. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    PubMed Central

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  15. Ultrathin films of polycrystalline MnGa alloy with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ono, Atsuo; Suzuki, Kazuya Z.; Ranjbar, Reza; Sugihara, Atsushi; Mizukami, Shigemi

    2017-02-01

    Room temperature growth of textured polycrystalline films of MnGa alloys using a CoGa buffer layer on a thermally oxidized Si substrate is demonstrated. MnGa thin films with a thickness of 2 nm exhibit out-of-plane rectangular hysteresis loops. A small saturation magnetization of about 200 emu/cm3 and a large perpendicular magnetic anisotropy of up to 3–5 Merg/cm3 were achieved for 2- and 3-nm-thick MnGa ultrathin films; such values have never been reported before, and they provide a pathway for integration with conventional Si technology.

  16. Perpendicular Magnetization Behavior of Low- Temperature Ordered FePt Films with Insertion of Ag Nanolayers

    PubMed Central

    Wei, Da-Hua

    2016-01-01

    FePt-Ag nanocomposite films with large perpendicular magnetic anisotropy have been fabricated by alternate-atomic-layer electron beam evaporation onto MgO(100) substrates at the low temperature of 300 °C. Their magnetization behavior and microstructure have been studied. The surface topography was observed and varied from continuous to nanogranular microstructures with insertion of Ag nanolayers into Fe/Pt bilayer films. The measurement of angular-dependent coercivity showed a tendency of the domain-wall motion as a typical peak behavior shift toward more like a coherent Stoner-Wohlfarth rotation type with the insertion of Ag nanolayers into the FePt films. On the other hand, the inter-grain interaction was determined from a Kelly-Henkel plot. The FePt film without insertion of Ag nanolayers has a positive δM, indicating strong exchange coupling between neighboring grains, whereas the FePt film with insertion of Ag nanolayers has a negative δM, indicating that inter-grain exchange coupling is weaker, thus leading to the presence of dipole interaction in the FePt–Ag nanogranular films. The magnetic characteristic measurements confirmed that the perpendicular magnetization reversal behavior and related surface morphology of low-temperature-ordered FePt(001) nanogranular films can be systematically controlled by the insertion of Ag nanolayers into the FePt system for next generation magnetic storage medium applications. PMID:28773336

  17. Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

    NASA Technical Reports Server (NTRS)

    Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

    2009-01-01

    L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

  18. Enhancement of perpendicular magnetic anisotropy by compressive strain in alternately layered FeNi thin films.

    PubMed

    Sakamaki, M; Amemiya, K

    2014-04-23

    The effect of the lattice strain on magnetic anisotropy of alternately layered FeNi ultrathin films grown on a substrate, Cu(tCu = 0-70 ML)/Ni(48)Cu(52)(124 ML)/Cu(0 0 1) single crystal, is systematically studied by means of in situ x-ray magnetic circular dichroism (XMCD) and reflection high-energy electron diffraction (RHEED) analyses. To investigate the magnetic anisotropy of the FeNi layer itself, a non-magnetic substrate is adopted. From the RHEED analysis, the in-plane lattice constant, ain, of the substrate is found to shrink by 0.8% and 0.5% at tCu = 0 and 10 ML as compared to that of bulk Cu, respectively. Fe L-edge XMCD analysis is performed for n ML FeNi films grown on various ain, and perpendicular magnetic anisotropy (PMA) is observed at n = 3 and 5, whereas the film with n = 7 shows in-plane magnetic anisotropy. Moreover, it is found that PMA is enhanced with decreasing ain, in the case where a Cu spacer layer is inserted. We suppose that magnetic anisotropy in the FeNi films is mainly carried by Fe, and the delocalization of the in-plane orbitals near the Fermi level increases the perpendicular orbital magnetic moment, which leads to the enhancement of PMA.

  19. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-01

    B2-ordered Co2FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering ˜81.2% with a low damping parameter (α) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 °C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co2FeAl films annealed at 350 °C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing α significantly. However, the observed damping of Co2FeAl films was still lower than that of Co60Fe20B20 films prepared at the same thickness and annealing temperature.

  20. Effect of sputtering power on the magnetic properties of amorphous perpendicular TbFeCo films

    NASA Astrophysics Data System (ADS)

    Wang, Ke; Huang, Ya; Xu, Zhan; Dong, Shuo; Chen, Ruofei

    2017-02-01

    A series of amorphous perpendicular TbFeCo films are sputtered using a composite target. The magnetic properties of the TbFeCo films are found to strongly be influenced by sputtering power. The above-RT magnetic compensation point in the films sputtered at high powers is revealed by thermomagnetic measurements. With increasing the power the compensation point shifts considerably towards higher temperature, while only a slight reduction in the Curie temperature occurs. The coercivity is found to initially increase with the power and then falls, which is in accordance with film composition moving from FeCo-rich to Tb-rich side. This can be well explained by the sputtering yield of Tb, which increases faster than FeCo atoms with the power during the sputtering. Our results show a convenient way to adjust the coercivity of the films by modifying the Tb-to-FeCo ratio using the sputtering power.

  1. Investigation and Effective Control of Perpendicular Magnetic Anisotropy for TbCo Films with Different Underlayers

    NASA Astrophysics Data System (ADS)

    Tang, Minghong; Chen, Shaohai; Zhang, Xiangli; Zhang, Zongzhi; Jin, Q. Y.

    2016-10-01

    We performed a detailed study on the perpendicular magnetic anisotropy (PMA) of TbCo film by using two kinds of nonmagnetic underlayers, Ta and Ta/Cu with different thicknesses. We found that for both the Tb-rich and Co-rich TbCo alloy films, the PMA strength decreases considerably with the increase of Ta underlayer thickness, while their net saturation magnetization Ms exhibit opposite varying trends. The Ms value continues to increase for the Co-rich TbCo samples while decrease for the Tb-rich films. Interestingly, an additional Cu layer inserted between the Ta and TbCo layers can efficiently recover the PMA and Ms. We attribute such observed variation behaviors of magnetic properties to the increased disordering of Tb magnetic moments at the Ta/TbCo interface, which has been verified by both experimental measurements and micromagnetic simulations.

  2. Electrical detection of magnetization dynamics in an ultrathin CoFeB film with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Kong, Wenwen; Fan, Xiaolong; Zhou, Hengan; Cao, Jiangwei; Guo, Dangwei; Gui, Y. S.; Hu, C.-M.; Xue, Desheng

    2016-10-01

    The anomalous Hall effect (AHE) was used to investigate the magnetization dynamics of an ultrathin (1.3 nm) CoFeB magnetic multilayer with perpendicular magnetic anisotropy (PMA). By directly sending a radio frequency (rf) current into a millimeter-sized film sample without any lithography process, a resonant dc voltage can be detected along the Hall direction. This method was used to study the dynamic properties of ultrathin CoFeB films, such as the gyromagnetic ratio, amplitude of PMA field, and magnetic damping. The dc voltage was proven to be the consequence of spin rectification enabled by the AHE, and the dynamic magnetization was driven by the Oersted field and spin current from the electric current in the adjacent Ta layer.

  3. Increased magnetic damping in ultrathin films of Co2FeAl with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Takahashi, Y. K.; Miura, Y.; Choi, R.; Ohkubo, T.; Wen, Z. C.; Ishioka, K.; Mandal, R.; Medapalli, R.; Sukegawa, H.; Mitani, S.; Fullerton, E. E.; Hono, K.

    2017-06-01

    We estimated the magnetic damping constant α of Co2FeAl (CFA) Heusler alloy films of different thicknesses with an MgO capping layer by means of time-resolved magneto-optical Kerr effect and ferromagnetic resonance measurements. CFA films with thicknesses of 1.2 nm and below exhibited perpendicular magnetic anisotropy arising from the presence of the interface with MgO. While α increased gradually with decreasing CFA film thickness down to 1.2 nm, it was increased substantially when the thickness was reduced further to 1.0 nm. Based on the microstructure analyses and first-principles calculations, we attributed the origin of the large α in the ultrathin CFA film primarily to the Al deficiency in the CFA layer, which caused an increase in the density of states and thereby in the scatterings of their spins.

  4. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  5. Perpendicular magnetic anisotropy and spin reorientation transition in L1{sub 0} FePt films

    SciTech Connect

    Ahn, Jae Young; Lee, Nyun Jong; Kim, Tae Hee; Lee, J.-H.; Michel, Anny; Eyidi, Dominique

    2011-04-01

    We investigated the thickness and composition dependence of perpendicular magnetic anisotropy (PMA) in L1{sub 0} Fe{sub 1-x}Pt{sub x} (x = 0.4, 0.5, and 0.55) films. The FePt films with different thicknesses of 35 and 70 A were grown at the substrate temperature T{sub s} = 300 deg. C by molecular beam epitaxy coevaporation technique. A (001)-oriented epitaxial L1{sub 0} FePt film was grown on the thin (001)-oriented fcc Pt layer, while a poorly crystallized FePt film was formed on the (111)-textured Pt layer. Our results showed that, at a fixed thickness of 70 A, the PMA of FePt alloy films is enhanced as Pt content increases from 40% to 55%.

  6. Long-lived ultrafast spin precession in manganese alloys films with a large perpendicular magnetic anisotropy.

    PubMed

    Mizukami, S; Wu, F; Sakuma, A; Walowski, J; Watanabe, D; Kubota, T; Zhang, X; Naganuma, H; Oogane, M; Ando, Y; Miyazaki, T

    2011-03-18

    Spin precession with frequencies up to 280 GHz is observed in Mn(3-δ)Ga alloy films with a perpendicular magnetic anisotropy constant K(u)∼15  M erg/cm(3). The damping constant α, characterizing macroscopic spin relaxation and being a key factor in spin-transfer-torque systems, is not larger than 0.008 (0.015) for the δ=1.46 (0.88) film. Those are about one-tenth of α values for known materials with large K(u). First-principles calculations well describe both low α and large K(u) for these alloys.

  7. Spin Orbit Torque in TbCo Films with Bulk Perpendicular Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Ueda, Kohei; Mann, Maxwell; Tan, Aik-Jun; Beach, Geoffrey. S. D.

    Spin-orbit torque (SOT) has generated considerable interest for manipulating magnetization in spintronic devices with ultra-low dissipation. Recent research has demonstrated that highly efficient magnetization control can be driven by current-induced SOT in ferromagnet/heavy metals bilayers with strong spin orbit coupling. However, most work on SOT has focused on ultra-thin magnetic films with interfacial perpendicular magnetic anisotropy (PMA), whereas future devices will require bulk PMA for sufficient thermal stability. Recently, Zhao et al reported SOT induced magnetization switching in a bulk PMA material; however, the films examined were still rather thin. Here we examine spin orbit torques in TbCo alloy films with bulk PMA, sandwiched between top and bottom Ta layers. By performing conventional harmonic and current-induced switching measurements, we quantified the current-induced effective fields generated by damping-like (DL) and field-like (FL) torques. The DL torque is much larger than FL torque, and corresponds to an effective spin Hall angle consistent with that of Ta. Owing to the relatively small saturation magnetized of these ferrimagnetic materials, the current-induced effective field is comparable to that observed in nm-thick Co films, despite the much larger film thicknesses used here. These results demonstrate ferromagnetic alloys with bulk PMA can be engineered to simultaneously provide thermal stability and efficient SOT switching.

  8. Perpendicularizing magnetic anisotropy of full-Heusler Co2FeAl films by cosputtering with terbium

    NASA Astrophysics Data System (ADS)

    Li, X. Q.; Xu, X. G.; Zhang, D. L.; Miao, J.; Zhan, Q.; Jalil, M. B. A.; Yu, G. H.; Jiang, Y.

    2010-04-01

    In this letter, we fabricated Co2FeAl films with perpendicular-to-plane magnetic anisotropy by cosputtering with terbium (Tb). The as-prepared (Tb+Co2FeAl) films (TCFA) consists of nanocrystalline L21 Co2FeAl and amorphous alloy of Tb(Co, Fe, and Al). The coercivity field (Hc) of the TCFA films is adjustable from 200 to 800 Oe. After annealing, the Hc decreases to 70 Oe. A perpendicularly magnetized spin valve with the TCFA films as free and reference layers shows a current-perpendicular-to-plane magnetoresistance of 1.8% at room temperature. Our result opens a way to fabricate perpendicularly magnetized full-Heusler alloys and makes it possible to realize faster and simple structured magnetic storage bits in the future.

  9. Perpendicular magnetization of Co2FeAl full-Heusler alloy films induced by MgO interface

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Mitani, Seiji; Inomata, Koichiro

    2011-06-01

    The perpendicular magnetization of Co2FeAl (CFA) full-Heusler alloy films was achieved in the structures of CFA/MgO and MgO/CFA with the perpendicular magnetic anisotropy energy density (KU) of 2-3×106 erg/cm3, which can be used as the perpendicular ferromagnetic electrodes of MgO-based magnetic tunnel junctions (MTJs) with high thermal stability at sub-50-nm dimension. The CFA thickness dependence of KU was investigated at different annealing temperatures, indicating that the perpendicular anisotropy of CFA is contributed by the interfacial anisotropy between CFA and MgO. This letter will open up a way for obtaining perpendicular magnetization of Co-based full-Heusler alloys, which is promising for further reduction in the critical current of current induced magnetization switching in MgO-based MTJ nanopillars with perpendicular full-Heusler alloy electrodes.

  10. High-purity cobalt thin films with perpendicular magnetic anisotropy prepared by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ootera, Yasuaki; Shimada, Takuya; Kado, Masaki; Quinsat, Michael; Morise, Hirofumi; Nakamura, Shiho; Kondo, Tsuyoshi

    2015-11-01

    A study of the chemical vapor deposition (CVD) of high-purity cobalt thin films is described. The Co layer prepared by a thermal CVD technique with a Pt/Ta underlayer and a Pt cap layer shows a saturation magnetization (Ms) of ∼1.8 T and perpendicular magnetic anisotropy (PMA) with an anisotropy energy (Ku) of ∼105 J/m3. The cobalt thickness dependence of Ku reveals that the interfacial anisotropy at the Pt/Co interface is most likely the origin of the obtained PMA.

  11. Ferromagnetic resonance linewidth and damping in perpendicular-anisotropy magnetic multilayers thin films

    NASA Astrophysics Data System (ADS)

    Beaujour, Jean-Marc

    2010-03-01

    Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe) thin films. We have conducted systematic studies of a variety of thin film materials with perpendicular magnetic anisotropy to investigate the origin of the enhanced FMR linewidths, including Ni/Co and CoFeB/Co/Ni multilayers. In Ni/Co multilayers the PMA was systematically reduced by irradiation with Helium ions, leading to a transition from out-of-plane to in-plane easy axis with increasing He ion fluence [1,2]. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane with an applied in-plane magnetic field. Irradiation of the film with Helium ions decreases the PMA and the distribution of PMA parameters, leading to a large reduction in the FMR linewidth for in-plane magnetization. These results suggest that fluctuations in the PMA lead to a large two magnon scattering contribution to the linewidth for in-plane magnetization and establish that the Gilbert damping is enhanced in such materials (α˜0.04, compared to α˜0.002 for pure Fe) [2]. We compare these results to those on CoFeB/Co/Ni and published results on other thin film materials with PMA [e.g., Ref. 3]. [1] D. Stanescu et al., J. Appl. Phys. 103, 07B529 (2008). [2] J-M. L. Beaujour, D. Ravelosona, I. Tudosa, E. Fullerton, and A. D. Kent, Phys. Rev. B RC 80, 180415 (2009). [3] N. Mo, J. Hohlfeld, M. ulIslam, C. S. Brown, E. Girt, P. Krivosik, W. Tong, A. Rebel, and C. E. Patton, Appl. Phys. Lett. 92, 022506 (2008). *Research done in collaboration with: A. D. Kent, New York University, D. Ravelosona, Institut d'Electronique Fondamentale, UMR CNRS 8622, Universit'e Paris Sud, E. E. Fullerton, Center for Magnetic Recording Research, UCSD, and supported by NSF

  12. Electron theory of perpendicular magnetic anisotropy of Co-ferrite thin films

    SciTech Connect

    Inoue, Jun-ichiro; Yanagihara, Hideto; Kita, Eiji; Niizeki, Tomohiko; Itoh, Hiroyoshi

    2014-02-15

    We develop an electron theory for the t{sub 2g} electrons of Co{sup 2+} ions to clarify the perpendicular magnetic anisotropy (PMA) mechanism of Co-ferrite thin films by considering the spin-orbit interaction (SOI) and crystal-field (CF) potentials induced by the local symmetry around the Co ions and the global tetragonal symmetry of the film. Uniaxial and in-plane MA constants K{sub u} and K{sub 1} at 0 K, respectively, are calculated for various values of SOI and CF. We show that reasonable parameter values explain the observed PMA and that the orbital moment for the in-plane magnetization reduces to nearly half of that of the out-of-plane magnetization.

  13. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    SciTech Connect

    Lee, Hwachol; Sukegawa, Hiroaki Ohkubo, Tadakatsu; Kasai, Shinya; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-07-20

    Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  14. The effect of underlayers on the reversal of perpendicularly magnetized multilayer thin films for magnetic micro- and nanoparticles

    NASA Astrophysics Data System (ADS)

    Vemulkar, T.; Mansell, R.; Petit, D. C. M. C.; Cowburn, R. P.; Lesniak, M. S.

    2017-01-01

    Perpendicularly magnetized microparticles offer the ability to locally apply high torques on soft matter under an applied magnetic field. These particles are engineered to have a zero remanence magnetic configuration via synthetic antiferromagnetic coupling using a Ru coupling interlayer. The flexibility offered by the top down thin film fabrication process in a CoFeB/Pt perpendicular thin film is demonstrated by using the Pt interlayer thicknesses in a Pt/Ru/Pt antiferromagnetic coupling multilayer to tune the applied magnetic field value of the easy axis spin-flip transition to saturation and hence the field value at which the magnetic particles are magnetically activated via a distinct transition to saturation. The importance of a Ta buffer layer on the magnetic behavior of the stack is shown. While Au capping layers are desirable for biotechnology applications, we demonstrate that they can drastically change the nucleation and propagation of domains in the film, thereby altering the reversal behavior of the thin film. The effect of Au underlayers on a multilayer thin film composed of repeated motifs of a synthetic antiferromagnetic building block is also investigated.

  15. Effect of Ag underlayer on microstructures and perpendicular magnetic properties of CoPt nanocomposite thin films.

    PubMed

    Shen, C L; Kuo, P C; Li, Y S; Lin, G P; Huang, K T; Ou, S L; Chen, S C

    2011-12-01

    CoPt/Ag films were prepared by magnetron sputtering on glass substrates and subsequent annealing. The dependence of degree of ordering and magnetic properties on Ag film thickness and annealing conditions were investigated. It was found that the Ag underlayer played a dominant role in inducing the (001) texture of the CoPt film after annealing. CoPt films with a thickness about 20 nm and Ag underlayers with a thickness about 70 nm are easy to obtain a large degree of ordering and a perpendicular magnetic anisotropy after annealing at 700 degrees C for 30 min. CoPt/Ag films with out-of-plane coercivity (Hc (perpendicular)) in the range of 13.5-14.0 kOe and a out-of-plane squareness (S(perpendicular)) of 0.97 were obtained after annealing at 700 degrees C for 30 min. Ag underlayer is beneficial to enhance the Hc(perpendicular)and S(perpendicular) of CoPt film significantly. The degree of ordering and perpendicular magnetic properties of the CoPt films which deposited on Ag underlayer are larger than those of the single layer CoPt films.

  16. Overlayer effects on perpendicular magnetic anisotropy in Co/Au/Cu films

    NASA Astrophysics Data System (ADS)

    Lee, Sukmock; Park, Sungkyun; Falco, Charles M.

    2001-03-01

    We have performed Brillouin light scattering measurements to investigate the effect on the perpendicular magnetic anisotropy (PMA) of overlayers on ultra--thin Co films prepared by Molecular Beam Epitaxy. The overlayer materials used for these studies were Al and Au. We observed a systematic decrease in PMA when using Al instead of Au overlayers, and will present results of the uniaxial anisotropies of the films as a function of Au underlayer thickness. In addition, we found the unexpected result that the PMA is significantly reduced when an Au overlayer of 3.5 nm is covered by an extra Al capping layer. The amount of this reduction depends on the thickness of the Al layer. We speculate that misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co.

  17. Interface effects on perpendicular magnetic anisotropy for molecular-capped cobalt ultrathin films

    NASA Astrophysics Data System (ADS)

    Zhang, Xianmin; Mizukami, Shigemi; Kubota, Takahide; Oogane, Mikihiko; Naganuma, Hiroshi; Ando, Yasuo; Miyazaki, Terunobu

    2011-10-01

    The perpendicular magnetic anisotropy (PMA) of cobalt (0.5-1.8 nm) films capped separately by pentacene (Pc), fullerene (C60), and 8-hydroxyquinoline-aluminum (Alq3) are investigated. For all three series, the thickness of Co is around 0.7 nm for maximum out-of-plane coercivity. It is found that the coercivity of C60-capped films is nearly equal to that for Alq3-capped samples, although both are smaller than for Pc-capped films. The different interface effects of Co/molecules are discussed to explain this observation. This work highlights the PMA of ferromagnetic metal, which can be markedly infected depending on the nature of organic molecule.

  18. Perpendicularly magnetized YIG-film resonators and waveguides with high operating power

    NASA Astrophysics Data System (ADS)

    Balinskiy, M.; Mongolov, B.; Gutierrez, D.; Chiang, H.; Slavin, A.; Khitun, A.

    2017-05-01

    We propose a novel technique for building YIG film-based resonators and waveguides for high power operating microwave devices. Our approach is based on the effect of total internal reflection (TIR) at the interface between the non-metalized and metalized regions of YIG film, which take place for forward volume magnetostatic spin waves in perpendicularly magnetized YIG films. Prototype resonators and waveguides were designed, fabricated, and tested. The obtained experimental data demonstrate high quality factor of 50 dB and a high power operation up to +15 dBm in the frequency range from 1.8 GHz to 5.1 GHz. Application of such resonators and waveguides in electrically tunable microwave oscillators promises an extremely low phase noises about -135 dB/Hz at 10 kHz offset.

  19. Perpendicularly magnetized YIG-film resonators and waveguides with high operating power

    DOE PAGES

    Balinskiy, M.; Mongolov, B.; Gutierrez, D.; ...

    2016-12-27

    We propose a novel technique for building YIG film-based resonators and waveguides for high power operating microwave devices. Our approach is based on the effect of total internal reflection (TIR) at the interface between the non-metalized and metalized regions of YIG film, which take place for forward volume magnetostatic spin waves in perpendicularly magnetized YIG films. Prototype resonators and waveguides were designed, fabricated, and tested. The obtained experimental data demonstrate high quality factor of 50 dB and a high power operation up to +15 dBm in the frequency range from 1.8 GHz to 5.1 GHz. Application of such resonators andmore » waveguides in electrically tunable microwave oscillators promises an extremely low phase noises about - 135 dB/Hz at 10 kHz offset.« less

  20. On the origin of perpendicular magnetic anisotropy in strained Fe-Co(-X) films

    NASA Astrophysics Data System (ADS)

    Reichel, L.; Edström, A.; Pohl, D.; Rusz, J.; Eriksson, O.; Schultz, L.; Fähler, S.

    2017-02-01

    Very high magnetic anisotropies have been theoretically predicted for strained Fe-Co(-X) and indeed several experiments on epitaxial thin films seemed to confirm strain induced anisotropy enhancement. This study presents a critical analysis of the different contributions to perpendicular anisotropy: volume, interface and surface anisotropies. Tracing these contributions, thickness series of single layer films as well as multilayers with Au-Cu buffers/interlayers of different lattice parameters have been prepared. The analysis of their magnetic anisotropy reveals a negligible influence of the lattice parameter of the buffer. Electronic effects, originating from both, the Au-Cu interface and the film surface, outrange the elastic effects. Surface anisotropy, however, exceeds the interface anisotropy by more than a factor of three. A comparison with results from density functional theory suggests, that the experimentally observed strong perpendicular surface anisotropy originates from a deviation from an ideal oxide-free surface. Accordingly, tailored Fe-Co-X/oxide interfaces may open a route towards high anisotropy in rare-earth free materials.

  1. L10 FePt-based thin films for future perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Varvaro, G.; Laureti, S.; Fiorani, D.

    2014-11-01

    Current magnetic recording media using perpendicular CoCrPt-Oxide granular films are reaching their physical limit (approx 750 Gbit/in2 density) due to thermal fluctuations that hinder a further reduction of grain size (<6-7 nm) needed to scale down the bit size. L10-FePt alloy is currently considered the most promising candidate for future recording media with areal densities above 1 Tbit/in2 thanks to its high magneto-crystalline anisotropy (K=6-10 MJ/m3), which enables it to be thermally stable even at grain sizes down to 3 nm. However, its huge anisotropy implies an increase of the switching field, which cannot be afforded by current available write heads. To simultaneously address the writability and thermal stability requirements, exchange coupled composite media, combining two or multiphase hard and soft materials, where the hard phase provides thermal stability and the soft phase reduces the switching field, have been recently proposed. This paper briefly reviews the fundamental aspects as well as both experimental approaches and magnetic properties of L10 FePt-based single phase films and exchange coupled systems for future perpendicular magnetic recording media.

  2. Material dependence of anomalous Nernst effect in perpendicularly magnetized ordered-alloy thin films

    NASA Astrophysics Data System (ADS)

    Hasegawa, K.; Mizuguchi, M.; Sakuraba, Y.; Kamada, T.; Kojima, T.; Kubota, T.; Mizukami, S.; Miyazaki, T.; Takanashi, K.

    2015-06-01

    Material dependence of the anomalous Nernst effect (ANE) in perpendicularly magnetized ordered-alloy thin films is systematically investigated. The ANE was found to have a tendency to increase simply as uniaxial magnetic anisotropy increased at room temperature. The ANE increases as temperature increases from 10 to 300 K for all the materials. However, the signs of the ANE in Fe-based ordered-alloys (L10-FePt and L10-FePd) and in a Co/Ni multilayer are opposite to those in Mn-based ordered-alloys (L10-MnGa and D022-Mn2Ga). Ordered-alloys with larger uniaxial magnetic anisotropies reveal larger ANE and might be desirable for thermoelectric applications.

  3. Perpendicular Magnetic Anisotropy in Fe-N Thin Films: Threshold Field for Irreversible Magnetic Stripe Domain Rotation

    NASA Astrophysics Data System (ADS)

    Garnier, L.-C.; Eddrief, M.; Fin, S.; Bisero, D.; Fortuna, F.; Etgens, V. H.; Marangolo, M.

    The magnetic properties of an iron nitride thin film obtained by ion implantation have been investigated. N2+ ions were implanted in a pristine iron layer epitaxially grown on ZnSe/GaAs(001). X-ray diffraction measurements revealed the formation of body-centered tetragonal N-martensite whose c-axis is perpendicular to the thin film plane and c-parameter is close to that of α‧-Fe8N. Magnetic measurements disclosed a weak perpendicular magnetic anisotropy (PMA) whose energy density KPMA was assessed to about 105J/m3. A sharp decline of the in-plane magnetocrystalline anisotropy (MCA) was also observed, in comparison with the body-centered cubic iron. The origin of the PMA is attributed to the MCA of N-martensite and/or stress-induced anisotropy. As a result of the PMA, weak magnetic stripe domains with a period of about 130nm aligned along the last saturating magnetic field direction were observed at remanence by magnetic force microscopy. The application of an increasing in-plane magnetic field transverse to the stripes Htrans highlighted a threshold value (μ0Htrans≈0.1T) above which these magnetic domains irreversibly rotated. Interestingly, below this threshold, the stripes do not rotate, leading to a zero remanent magnetization along the direction of the applied field. The interest of this system for magnetization dynamics is discussed.

  4. Perpendicular magnetic anisotropy in Mn{sub 2}CoAl thin film

    SciTech Connect

    Sun, N. Y.; Zhang, Y. Q.; Che, W. R.; Shan, R.; Fu, H. R.; You, C. Y.

    2016-01-15

    Heusler compound Mn{sub 2}CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn{sub 2}CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn{sub 2}CoAl films resulting from Mn-O and Co-O bonding at Mn{sub 2}CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.

  5. Degradation of perpendicular magnetic anisotropy in CoFeB film after H2 plasma irradiation

    NASA Astrophysics Data System (ADS)

    Satake, Makoto; Yamada, Masaki

    2017-04-01

    The degradation of the perpendicular magnetic anisotropy (PMA) of a Ta cap/MgO/CoFeB stack film after H2 plasma irradiation was investigated to clarify the magnetic damage induced during the hydrogen-containing plasma etching (e.g., CO/NH3 or CH3OH plasma etching). When the CoFeB layer thickness was 1.2 nm, the out-of-plane coercivity decreased from 1.0 to 0.15 mT after H2 plasma irradiation, and the perpendicular anisotropy field also decreased, from 220 to 90 mT. The dependence of the reduction in the PMA on the CoFeB thickness revealed that the interfacial anisotropy energy was reduced from 0.98 to 0.79 mJ/cm2 after H2 plasma irradiation. These results clearly indicate that hydrogen-containing plasma etching has the potential to degrade the PMA during MgO/CoFeB film patterning.

  6. Temperature dependence of perpendicular magnetic anisotropy in CoFeB thin films

    NASA Astrophysics Data System (ADS)

    Fu, Yu; Barsukov, I.; Li, Jing; Gonçalves, A. M.; Kuo, C. C.; Farle, M.; Krivorotov, I. N.

    2016-04-01

    We study perpendicular magnetic anisotropy in thin films of Ta/Co20Fe60B20/MgO by ferromagnetic resonance and find a linear temperature dependence for the first and second order uniaxial terms from 5 to 300 K. Our data suggest the possible hybridization of Fe-O orbitals at the CoFeB/MgO interface for the origin of the first order anisotropy. However, we also find that non-interfacial contributions to the anisotropy are present. An easy-cone anisotropy is found for the entire temperature range in the narrow region of film thicknesses around the spin reorientation transition 1.2-1.35 nm.

  7. Modification of the perpendicular magnetic anisotropy of ultrathin Co films due to the presence of overlayers

    NASA Astrophysics Data System (ADS)

    Park, Sungkyun; Lee, Sukmock; Falco, Charles M.

    2002-05-01

    In order to understand the effect of interfacial strain on perpendicular magnetic anisotropy (PMA) of ultrathin Co films, ex situ Brillouin light scattering measurements were performed for various overlayer materials. The samples were prepared by molecular beam epitaxy and Cu, Al, and Au were used as overlayer materials. We observed a decrease in PMA of the Co with the Cu and Al overlayers. In addition, we found an unexpected result that the PMA is significantly reduced when an Au overlayer of 35 Å is covered by an extra Al capping layer. The amount of this reduction depends on the thickness of the Al layer. Our results lead us to speculate that misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co.

  8. Field-dependent perpendicular magnetic anisotropy in CoFeB thin films

    SciTech Connect

    Barsukov, I. Krivorotov, I. N.; Fu, Yu; Gonçalves, A. M.; Sampaio, L. C.; Spasova, M.; Farle, M.; Arias, R. E.

    2014-10-13

    We report ferromagnetic resonance measurements of perpendicular magnetic anisotropy in thin films of Ta/Co{sub 20}Fe{sub 60}B{sub 20}/MgO as a function of the Co{sub 20}Fe{sub 60}B{sub 20} layer thickness. The first and second order anisotropy terms show unexpectedly strong dependence on the external magnetic field applied to the system during the measurements. We propose strong interfacial spin pinning as a possible origin of the field-dependent anisotropy. Our results imply that high-field anisotropy measurements cannot be directly used for quantitative evaluation of zero-field performance parameters of CoFeB-based devices such as spin torque memory.

  9. Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures.

    PubMed

    Jung, Sol; Yim, Haein

    2015-10-01

    Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å], and [CoSiB 9 Å/Pd 14 Å], multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.

  10. Saturation magnetization and perpendicular anisotropy of Fe/GaAs(110) epitaxial films studied by the extraordinary hall effect

    NASA Astrophysics Data System (ADS)

    Riggs, K. T.; Dan Dahlberg, E.; Prinz, G. A.

    1988-05-01

    The magnetic field dependence of the extraordinary Hall effect (EHE) has been used to determine the sum of the perpendicular magnetic anisotropy and the saturation magnetization of thin (5-20 nm) Fe films. The films were grown on (110) surfaces of GaAs by molecular beam epitaxy. The free surface of the films was not protected thereby allowing an iron oxide layer to form upon removal from the MBE apparatus. The relation between the film thickness and the sum of the perpendicular anisotropy energy and the saturation magnetization was compared to that determined in a previous study which relied on ferromagnetic resonance (FMR) to measure the same quantity. The FMR study measured both oxide covered films and also films with a protective overcoating of Al to prevent oxidation. It is found that the data from the EHE are not in agreement with the FMR data taken on the iron oxide covered films but instead are in agreement with the FMR data of the protected or nonoxidized films. In addition a determination of the surface anisotropy energy can be made by subtracting the magnetization data measured on overcoated films from the sum determined by the EHE analysis. In this case there is no indication of a large surface anisotropy energy making the perpendicular direction an easy axis.

  11. Composition dependence of magnetic properties in perpendicularly magnetized epitaxial thin films of Mn-Ga alloys

    NASA Astrophysics Data System (ADS)

    Mizukami, S.; Kubota, T.; Wu, F.; Zhang, X.; Miyazaki, T.; Naganuma, H.; Oogane, M.; Sakuma, A.; Ando, Y.

    2012-01-01

    Mn-Ga binary alloys show strong magnetism and large uniaxial magnetic anisotropy even though these alloys do not contain any noble, rare-earth metals or magnetic elements. We investigate the composition dependence of saturation magnetization MS and uniaxial magnetic anisotropy Ku in epitaxial films of MnxGa1-x alloys (x˜0.5-0.75) grown by magnetron sputtering. The MS values decrease linearly from approximately 600 to 200 emu/cm3 with increasing x, whereas the Ku values decrease slightly from approximately 15 to 10 Merg/cm3 with increasing x. These trends are distinct from those for known tetragonal hard magnets obtained in a limited composition range in Mn-Al and Fe-Pt binary alloys. These data are analyzed using a localized magnetic moment model.

  12. L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM Applications

    NASA Astrophysics Data System (ADS)

    Huang, Efrem Yuan-Fu

    The objective of the research conducted herein was to develop L10-ordered materials and thin film stack structures with high perpendicular magnetic anisotropy (PMA) for spin-transfertorque magnetoresistive random access memory (STT-MRAM) applications. A systematic approach was taken in this dissertation, culminating in exchange coupled L1 0-FePt and L10- MnAl heterogeneous structures showing great promise for developing perpendicular magnetic tunnel junctions (pMTJs) with both high thermal stability and low critical switching current. First, using MgO underlayers on Si substrates, sputtered MnAl films were systematically optimized, ultimately producing a Si substrate/MgO (20 nm)/MnAl (30)/Ta (5) film stack with a high degree of ordering and large PMA. Next, noting the incompatibility of insulating MgO underlayers with industrial-scale CMOS processes, attention was turned to using conductive underlayers. TiN was found to excel at promoting growth of L10-MnAl, with optimized films showing improved magnetic properties over those fabricated on MgO underlayers. The use of different post-annealing processes was then studied as an alternative to in situ annealing. Rapid thermal annealing (RTA) was found to produce PMA in films at lower annealing temperatures than tube furnace annealing, but tube furnace annealing produced films with higher maximum PMA than RTA. While annealed samples had lower surface roughness than those ordered by high in situ deposition temperatures, relying solely on annealing to achieve L10-ordering resulted drastically reduced PMA. Finally, heterogeneous L10-ordered FePt/MgO/MnAl film stacks were explored for pMTJs. Film stacks with MgO barrier layers thinner than 2 nm showed significant interdiffusion between the FePt and MnAl, while film stacks with thicker MgO barrier layers exhibited good ordering and high PMA in both the FePt and MnAl films. It is believed that this limitation is caused by the roughness of the underlying FePt, which was thicker

  13. Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga,Mn)As films at high temperatures

    NASA Astrophysics Data System (ADS)

    Wang, Hailong; Ma, Jialin; Yu, Xueze; Yu, Zhifeng; Zhao, Jianhua

    2017-01-01

    The electric-field effects on the magnetism in perpendicularly magnetized (Ga,Mn)As films at high temperatures have been investigated. An electric-field as high as 0.6 V nm-1 is applied by utilizing a solid-state dielectric Al2O3 film as a gate insulator. The coercive field, saturation magnetization and magnetic anisotropy have been clearly changed by the gate electric-field, which are detected via the anomalous Hall effect. In terms of the Curie temperature, a variation of about 3 K is observed as determined by the temperature derivative of the sheet resistance. In addition, electrical switching of the magnetization assisted by a fixed external magnetic field at 120 K is demonstrated, employing the gate-controlled coercive field. The above experimental results have been attributed to the gate voltage modulation of the hole density in (Ga,Mn)As films, since the ferromagnetism in (Ga,Mn)As is carrier-mediated. The limited modulation magnitude of magnetism is found to result from the strong charge screening effect introduced by the high hole concentration up to 1.10  ×  1021 cm-3, while the variation of the hole density is only about 1.16  ×  1020 cm-3.

  14. Correlation between static and dynamic magnetic properties of highly perpendicular magnetized C o49P t51 thin films

    NASA Astrophysics Data System (ADS)

    Saravanan, P.; Hsu, Jen-Hwa; Chérif, Salim Mourad; Roussigné, Yves; Belmeguenai, Mohamed; Stashkevich, Andrey; Vernier, Nicolas; Singh, Akhilesh Kr.; Chang, Ching-Ray

    2015-10-01

    The static and dynamic magnetic behavior of 5-nm-thick C o49P t51 films with strong perpendicular magnetic anisotropy (PMA) grown at different deposition temperatures (Td ,CoPt) was investigated using complementary techniques such as vibrating sample magnetometry (VSM), magneto-optical Kerr effect (MOKE) imaging, and Brillouin light scattering (BLS). Our previous study on these films demonstrated the evolution of phase transformation from an A 3 -disordered (hexagonal) to an L 11 -ordered (rhombohedral) structure against increasing Td ,CoPt from room temperature (RT) to 350°C. Along these lines, the changes in the domain configuration, magnetization reversal, and spin wave behavior of the 5-nm-thick CoPt films due to varying Td ,CoPt are emphasized in this study. The VSM out-of-plane hysteresis loops confirmed the existence of strong PMA for all the CoPt films, irrespective of Td ,CoPt. MOKE studies revealed that the films deposited at RT and at 150 ∘C containing hard and soft magnetic areas, while the films grown at higher Td ,CoPt, 250 and 350 ∘C , are more uniform and homogeneous. The MOKE findings are validated by the BLS spectra in terms of high and low frequency lines corresponding to the hard and soft magnetic areas, respectively. A suitable model is hypothesized to interpret the frequency variation of BLS modes corresponding to the easy saturated regions of the CoPt films. By this means, a good correlation between both static and dynamic behavior of the 5-nm-thick CoPt films has been established in this study.

  15. Edge-modulated perpendicular magnetic anisotropy in [Co/Pd]n and L10-FePt thin film wires

    NASA Astrophysics Data System (ADS)

    Zhang, Jinshuo; Ho, Pin; Currivan-Incorvia, Jean Anne; Siddiqui, Saima A.; Baldo, Marc A.; Ross, Caroline A.

    2015-11-01

    Thickness modulation at the edges of nanostructured magnetic thin films is shown to have important effects on their perpendicular magnetic anisotropy. Thin film wires with tapered edges were made from [Co/Pd]20 multilayers or L10-FePt films using liftoff with a double-layer resist. The effect of edge taper on the reversal process was studied using magnetic force microscopy and micromagnetic modeling. In [Co/Pd]20, the anisotropy was lower in the tapered edge regions which switched at a lower reverse field compared to the center of the wire. The L10-FePt wires showed opposite behavior with the tapered regions exhibiting higher anisotropy.

  16. Perpendicular magnetic anisotropy in amorphous NdxCo1 -x thin films studied by x-ray magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Cid, R.; Alameda, J. M.; Valvidares, S. M.; Cezar, J. C.; Bencok, P.; Brookes, N. B.; Díaz, J.

    2017-06-01

    The origin of perpendicular magnetic anisotropy (PMA) in amorphous NdxCo1 -x thin films is investigated using x-ray magnetic circular dichroism (XMCD) spectroscopy at the Co L2 ,3 and Nd M4 ,5 edges. The magnetic orbital and spin moments of the 3 d cobalt and 4 f neodymium electrons were measured as a function of the magnetic field orientation, neodymium concentration, and temperature. In all the studied samples, the magnetic anisotropy of the neodymium subnetwork is always oriented perpendicular to the plane, whereas the anisotropy of the orbital moment of cobalt is in the basal plane. The ratio Lz/Sz of the neodymium 4 f orbitals changes with the sample orientation angle, being higher and closer to the atomic expected value at normal orientation and smaller at grazing angles. This result is well explained by assuming that the 4 f orbital is distorted by the effect of an anisotropic crystal field when it is magnetized along its hard axis, clearly indicating that the 4 f states are not rotationally invariant. The magnetic anisotropy energy associated to the neodymium subnetwork should be proportional to this distortion, which we demonstrate is accessible by applying the XMCD sum rules for the spin and intensity at the Nd M4 ,5 edges. The analysis unveils a significant portion of neodymium atoms magnetically uncoupled to cobalt, i.e., paramagnetic, confirming the inhomogeneity of the films and the presence of a highly disordered neodymium rich phase already detected by extended x-ray-absorption fine structure (EXAFS) spectroscopy. The presence of these inhomogeneities is inherent to the evaporation preparation method when the chosen concentration in the alloy is far from its eutectic concentrations. An interesting consequence of the particular way in which cobalt and neodymium segregates in this system is the enhancement of the cobalt spin moment which reaches 1.95 μB in the sample with the largest segregation.

  17. Surface-termination-dependent magnetism and strong perpendicular magnetocrystalline anisotropy of an FeRh(001) thin film

    NASA Astrophysics Data System (ADS)

    Jekal, Soyoung; Rhim, S. H.; Hong, S. C.; Son, Won-joon; Shick, A. B.

    2015-08-01

    The magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While the magnetic ground state of bulk FeRh is G -type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular magnetocrystalline anisotropy whose energy +2.1 meV/□ is two orders of magnitude greater than bulk 3 d conventional magnetic metals (□ is the area of a two-dimensional unit cell). While the Goodenough-Kanamori-Anderson rule on the superexchange interaction is crucial in determining the magnetic ground phases of FeRh bulk and thin films, the magnetic phases are the results of interplay and competition between three mechanisms—the superexchange interaction, the Zener-type direct interaction, and energy gain by Rh magnetization.

  18. Large perpendicular magnetic anisotropy of ultrathin Ru and Rh films on a NiAl(001) surface.

    PubMed

    Kim, DongYoo; Yang, JeongHwa; Hong, Jisang

    2010-10-27

    Using the full potential linearized augmented plane wave (FLAPW) method, the magnetic properties of two-dimensional Ru and Rh monolayers (MLs) on a NiAl(001) surface have been investigated. It has been found that free standing one monolayer Ru and Rh films have ferromagnetic ground state with magnetic moments of 2.21 and 1.48 μ(B), respectively. The ferromagnetism is still observed even on a Ni terminated NiAl(001) surface, while no magnetic state is found on an Al terminated surface. The calculated magnetic moments of Ru and Rh atoms are 1.56 and 0.88 μ(B), respectively. In addition, an induced magnetic moment in surface Ni is observed. It has been found that the free standing Ru film has perpendicular magnetization to the film surface with a magnetocrystalline anisotropy (MCA) energy of 0.66 meV/atom, while an in-plane MCA energy of 0.37 meV/atom is achieved in Rh film. Very interestingly, we find that both Ru/NiAl(001) and Rh/NiAl(001) films have perpendicular magnetic anisotropy and the calculated MCA energies are 0.66 and 1.11 meV in Ru/NiAl(001) and Rh/NiAl(001), respectively. Along with the magnetic anisotropy, we have presented theoretically calculated x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) results.

  19. Large perpendicular magnetic anisotropy of ultrathin Ru and Rh films on a NiAl(001) surface

    NASA Astrophysics Data System (ADS)

    Kim, Dongyoo; Yang, JeongHwa; Hong, Jisang

    2010-10-01

    Using the full potential linearized augmented plane wave (FLAPW) method, the magnetic properties of two-dimensional Ru and Rh monolayers (MLs) on a NiAl(001) surface have been investigated. It has been found that free standing one monolayer Ru and Rh films have ferromagnetic ground state with magnetic moments of 2.21 and 1.48 μB, respectively. The ferromagnetism is still observed even on a Ni terminated NiAl(001) surface, while no magnetic state is found on an Al terminated surface. The calculated magnetic moments of Ru and Rh atoms are 1.56 and 0.88 μB, respectively. In addition, an induced magnetic moment in surface Ni is observed. It has been found that the free standing Ru film has perpendicular magnetization to the film surface with a magnetocrystalline anisotropy (MCA) energy of 0.66 meV/atom, while an in-plane MCA energy of 0.37 meV/atom is achieved in Rh film. Very interestingly, we find that both Ru/NiAl(001) and Rh/NiAl(001) films have perpendicular magnetic anisotropy and the calculated MCA energies are 0.66 and 1.11 meV in Ru/NiAl(001) and Rh/NiAl(001), respectively. Along with the magnetic anisotropy, we have presented theoretically calculated x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) results.

  20. Perpendicular magnetic anisotropy of CoPt AlN composite film with nano-fiber structure

    NASA Astrophysics Data System (ADS)

    Chen, C. C.; Toyoshima, H.; Hashimoto, M.; Shi, J.; Nakamura, Y.

    2005-06-01

    Co Pt AlN films were prepared by sputtering a Co Pt Al composite target in Ar+N2 atmosphere. Upon thermal annealing at elevated temperatures, fcc CoPt and a-AlN are formed in the films as phases separated from one other. Both phases develop as fiber-like columnar grains vertical to the substrate and with their lateral size less than 10 nm. Because of the shape anisotropy of the magnetic fiber grains the CoPt AlN film shows a perpendicular magnetic anisotropy at a thickness equal to or larger than about 25 nm while the Co TiN [6] and CoPt TiO2 [11] films do not unless their thicknesses reach 50 and 100 nm, respectively. This suggests that both the shape anisotropy of the CoPt magnetic fiber grains and their mutual separation in an a-AlN medium work more effectively in the formation with the perpendicular magnetic anisotropy. Such a perpendicular magnetic anisotropy of the CoPt AlN film associated with the nano-scale feature makes it a very promising candidate for future recording media with ultra-high area density.

  1. Effect of aging and annealing on perpendicular magnetic anisotropy of ultra-thin CoPt films

    NASA Astrophysics Data System (ADS)

    Hara, R.; Hayakawa, K.; Ebata, K.; Sugita, R.

    2016-05-01

    The effect of aging and annealing on the magnetic properties of ultra-thin CoPt films with a Ru underlayer was investigated. For the 3 nm thick CoPt film aged in the air, the decrease of the saturation magnetic moment ms, the drastic increase of the perpendicular coercivity Hc⊥ and the perpendicular anisotropy were observed. This is because the surface layer of the CoPt film was oxidized and the bottom layer with high perpendicular anisotropy due to lattice distortion remained. For the annealed 3 nm thick CoPt film with a Pt protective layer, rising the annealing temperature Ta led to the decrease of ms, the decrease after increase of Hc⊥, and the decrease of the perpendicular squareness ratio S⊥ at Ta of 400 ∘C. The origins of effect of annealing were considered to be the grain boundary diffusion and the bulk diffusion of Ru and Pt into the CoPt film, and relaxation of the lattice distortion.

  2. Crystal structure and magnetic properties of Pb substituted Ba-ferrite sputtered films for perpendicular magnetic recording media (abstract)

    NASA Astrophysics Data System (ADS)

    Morisako, Akimitsu; Matsumoto, Mitsunori; Naoe, Masahiko

    1993-05-01

    Ba-ferrite (BaM) sputtered films are suitable for a high density perpendicular recording medium.1 There were some problems to be solved in preparing BaM films. One of the most important problems is that a high substrate temperature Ts was necessary. Ts for preparing BaM films with c-axis dispersion angle Δθ50 as small as 2°-3° is about 620 °C and a high Ts limits the selection of substrate material. In this paper, Pb substituted BaM[(BaṡPb)M] films were prepared by dc magnetron sputtering and their crystal structure and magnetic properties were studied. The substrate is a thermally oxidized silicon wafer. The target is a sintered ferrite disk (8 cm diameter) with stoichiometric composition of BaM and Pb content was controlled by the numbers of Pb chips on this disk. Argon and oxygen gas were introduced into a chamber and discharge gas pressure was set at 2 mTorr. Partial oxygen gas pressure was 0.01 mTorr and an applied power was 50 W. The thickness of (BaṡPb)M films was about 1500 Å. The films prepared at Ts below 300 °C were amorphous and those prepared at Ts ranging from 300 to 400 °C consisted of spinel-like phase. Saturation magnetization Ms of these films was almost zero. The films prepared at Ts above 400 °C consisted of both hexagonal and spinel-like ferrites.2 Intensity of diffraction lines from hexagonal ferrite became strong as Ts was elevated and those for hexagonal ferrite were only from c-plane such as (004), (006), (008), (0010), (0012), and (0014). Usually, the lines from the (004), (0010), and (0012) planes cannot be observed in bulk BaM. This implies that the c axis is well oriented perpendicularly to the film plane. (Ba/Pb)M films prepared at Ts about 520 °C possess Δθ50 of about 1°, Hc⊥ of 1.0 kOe, and Ms of about 250 emu/cc.

  3. Magnetic films on nanoperforated templates: a route towards percolated perpendicular media.

    PubMed

    Schulze, C; Faustini, M; Lee, J; Schletter, H; Lutz, M U; Krone, P; Gass, M; Sader, K; Bleloch, A L; Hietschold, M; Fuger, M; Suess, D; Fidler, J; Wolff, U; Neu, V; Grosso, D; Makarov, D; Albrecht, M

    2010-12-10

    We present a study on the magnetization reversal in Co/Pt multilayer films with an out-of-plane easy axis of magnetization deposited onto substrates with densely distributed perforations with an average period as small as 34 nm. Deposition of magnetic Co/Pt multilayers onto the nanoperforated surface results in an array of magnetic nanodots surrounded by a continuous magnetic film. Following the evolution of the magnetic domain pattern in the system, we suggest that domain walls are pinned on structural inhomogeneities given by the underlying nanoperforated template. Furthermore, a series of micromagnetic simulations was performed in order to understand the modification of the pinning strength of domain walls due to the magnetic interaction between nanodots and the surrounding film. The results of the simulations show that magnetic exchange coupling between the nanodots and the surrounding film strongly influences the pinning behavior of the magnetic domain walls which can be optimized to provide maximal pinning.

  4. Effect of annealing on exchange stiffness of ultrathin CoFeB film with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Sato, Noriyuki; White, Robert M.; Wang, Shan X.

    2016-04-01

    The effect of annealing on the exchange stiffness of ultrathin CoFeB films with perpendicular magnetic anisotropy was investigated through the observation of magnetic domain structures by magneto-optic Kerr-effect microscopy. A significant reduction of the exchange stiffness after an annealing process was observed, which is in striking contrast to a previous report that studied thick CoFeB films with in-plane magnetic anisotropy. Our results suggest that interdiffusion of non-magnetic atoms from the adjacent layer into CoFeB layer reduces the exchange stiffness, which explains the difference between the annealing effect on ultrathin and the thick CoFeB films. Thus, it is critical to prevent annealing-induced interdiffusion in order to suppress undesired sub-volume switching that degrades thermal stability of a free-layer in spin-transfer torque magnetic random access memory.

  5. Influence of boron diffusion on the perpendicular magnetic anisotropy in Ta|CoFeB|MgO ultrathin films

    NASA Astrophysics Data System (ADS)

    Sinha, Jaivardhan; Gruber, Maria; Kodzuka, Masaya; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro; Hayashi, Masamitsu

    2015-01-01

    We have studied structural and magnetic properties of Ta|CoFeB|MgO heterostructures using cross-section transmission electron microscopy (TEM), electron energy loss spectrum (EELS) imaging, and vibrating sample magnetometry. From the TEM studies, the CoFeB layer is found to be predominantly amorphous for as deposited films, whereas small crystallites, diameter of ˜5 nm, are observed in films annealed at 300 °C. We find that the presence of such nanocrystallites is not sufficient for the occurrence of perpendicular magnetic anisotropy. Using EELS, we find that boron diffuses into the Ta underlayer upon annealing. The Ta underlayer thickness dependence of the magnetic anisotropy indicates that ˜0.2 nm of Ta underlayer is enough to absorb the boron from the CoFeB layer and induce perpendicular magnetic anisotropy. Boron diffusion upon annealing becomes limited when the CoFeB layer thickness is larger than ˜2 nm, which coincides with the thickness at which the saturation magnetization MS and the interface magnetic anisotropy KI drop by ˜20%. These results show the direct role which boron plays in determining the perpendicular magnetic anisotropy in CoFeB|MgO heterostructures.

  6. Influence of boron diffusion on the perpendicular magnetic anisotropy in Ta|CoFeB|MgO ultrathin films

    SciTech Connect

    Sinha, Jaivardhan; Gruber, Maria; Kodzuka, Masaya; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro; Hayashi, Masamitsu

    2015-01-28

    We have studied structural and magnetic properties of Ta|CoFeB|MgO heterostructures using cross-section transmission electron microscopy (TEM), electron energy loss spectrum (EELS) imaging, and vibrating sample magnetometry. From the TEM studies, the CoFeB layer is found to be predominantly amorphous for as deposited films, whereas small crystallites, diameter of ∼5 nm, are observed in films annealed at 300 °C. We find that the presence of such nanocrystallites is not sufficient for the occurrence of perpendicular magnetic anisotropy. Using EELS, we find that boron diffuses into the Ta underlayer upon annealing. The Ta underlayer thickness dependence of the magnetic anisotropy indicates that ∼0.2 nm of Ta underlayer is enough to absorb the boron from the CoFeB layer and induce perpendicular magnetic anisotropy. Boron diffusion upon annealing becomes limited when the CoFeB layer thickness is larger than ∼2 nm, which coincides with the thickness at which the saturation magnetization M{sub S} and the interface magnetic anisotropy K{sub I} drop by ∼20%. These results show the direct role which boron plays in determining the perpendicular magnetic anisotropy in CoFeB|MgO heterostructures.

  7. Room-temperature perpendicular magnetic anisotropy of MgO/Fe/MgO ultrathin films

    SciTech Connect

    Kozioł-Rachwał, A.; Ślęzak, T.; Przewoźnik, J.; Skowroński, W.; Stobiecki, T.; Wilgocka-Ślęzak, D.; Qin, Q. H.; Dijken, S. van; Korecki, J.

    2013-12-14

    We used the anomalous Hall effect to study the magnetic properties of MgO/Fe(t)/MgO(001) structures in which the Fe thickness t ranged from 4 Å to 14 Å. For the iron deposited at 140 K, we obtained perpendicular magnetization at room temperature below the critical thickness of t{sub c} = (9 ± 1) Å. In the vicinity of t{sub c}, the easy magnetization axis switched from an out-of-plane orientation to an in-plane orientation, and the observed spin-reorientation transition was considered in terms of the competition among different anisotropies. The perpendicular magnetization direction was attributed to magnetoelastic anisotropy. Finally, the temperature-dependent spin-reorientation transition was analyzed for Fe thicknesses close to t{sub c}.

  8. Tailoring magnetism in CoNi films with perpendicular anisotropy by ion irradiation

    SciTech Connect

    Stanescu, D.; Ravelosona, D.; Mathet, V.; Chappert, C.; Samson, Y.; Beigne, C.; Gierak, J.; Bouhris, E.; Fullerton, E. E.

    2008-04-01

    This paper reports on the influence of ion irradiation on the magnetic properties of Co/Ni multilayers with perpendicular magnetic anisotropy (PMA). This material is a very promising candidate for ultrahigh density spintronic applications since it exhibits high polarization and low damping parameters. We show that PMA can be tailored in a controlled way by using uniform He{sup +} ion irradiation or focused Ga{sup +} ion beam.

  9. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    PubMed

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  10. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co{sub 2}FeAl films

    SciTech Connect

    Cui, Yishen; Khodadadi, Behrouz; Schaefer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-22

    B2-ordered Co{sub 2}FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering {approx}81.2% with a low damping parameter ({alpha}) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 Degree-Sign C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co{sub 2}FeAl films annealed at 350 Degree-Sign C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing {alpha} significantly. However, the observed damping of Co{sub 2}FeAl films was still lower than that of Co{sub 60}Fe{sub 20}B{sub 20} films prepared at the same thickness and annealing temperature.

  11. Influence of ion implantation parameters on the perpendicular magnetic anisotropy of Fe-N thin films with stripe domains

    NASA Astrophysics Data System (ADS)

    Amarouche, T.; Garnier, L.-C.; Marangolo, M.; Eddrief, M.; Etgens, V. H.; Fortuna, F.; Sadaoui, Y.; Tamine, M.; Cantin, J. L.; von Bardeleben, H. J.

    2017-06-01

    Nitrogen-martensite thin films are known to present a perpendicular magnetic anisotropy (PMA) depending on the nitrogen content. Additionally, weak magnetic stripe domains have been studied in Fe-N samples made by ion implantation. In this work, ion implantation proves to be a good technique to make nitrogen-martensite thin films presenting both tunable PMA and stripe domains. We report on the changes in magnetic and structural properties of nitrogen-implanted iron thin films, resulting from various implantation conditions. Fluences from 1.8 × 1016 N2+/cm2 to 3.5 × 1016 N2+/cm2 at 26 keV and 5.3 × 1016 N2+/cm2 at 40 keV were used to implant iron thin films epitaxially grown on ZnSe/GaAs(001). X-ray diffraction measurements disclosed the presence of body-centered tetragonal nitrogen-martensite whose c-axis is perpendicular to the thin film plane and the c-parameter increases with fluence. Vibrating sample magnetometer measurements revealed that nitrogen implantation induced strong changes in magnetic properties such as an increasing PMA with fluence. Therefore, this PMA may originate from the magnetocrystalline anisotropy of nitrogen-martensite and stress-induced anisotropy. Magnetic stripe domains are notably observed by magnetic force microscopy for the highest fluences. Furthermore, ferromagnetic resonance measurements lead to the magnetic anisotropy constants calculation. The results show a significant increase of the PMA, related to the presence of nitrogen-martensite whose c-parameter is close to that of α'-Fe8N, which reaches a maximum value of 4.9 × 106 erg/cm3. In addition, an interesting comparison is done between the anisotropy constants of Fe-N and Fe-Ga samples. Fe-Ga thin films are also well known to present PMA and stripe domains.

  12. Determination of perpendicular magnetic anisotropy in ultrathin ferromagnetic films by extraordinary Hall voltage measurement.

    PubMed

    Moon, Kyoung-Woong; Lee, Jae-Chul; Choe, Sug-Bong; Shin, Kyung-Ho

    2009-11-01

    A magnetometric technique for detecting the magnetic anisotropy field of ferromagnetic films is described. The technique is based on the extraordinary Hall voltage measurement with rotating the film under an external magnetic field. By analyzing the angle-dependent Hall voltage based on the Stoner-Wohlfarth theory, the magnetic anisotropy field is uniquely determined. The present technique is pertinent especially for ultrathin films with strong intrinsic signal, in contrast to the conventional magnetometric techniques of which the signal is in proportion to the sample volume and geometry.

  13. Evidence for nanoscale two-dimensional Co clusters in CoPt3 films with perpendicular magnetic anisotropy.

    PubMed

    Cross, J O; Newville, M; Maranville, B B; Bordel, C; Hellman, F; Harris, V G

    2010-04-14

    The length scale of the local chemical anisotropy responsible for the growth-temperature-induced perpendicular magnetic anisotropy of face-centered cubic CoPt(3) alloy films was investigated using polarized extended x-ray absorption fine structure (EXAFS). These x-ray measurements were performed on a series of four (111) CoPt(3) films epitaxially grown on (0001) sapphire substrates. The EXAFS data show a preference for Co-Co pairs parallel to the film plane when the film exhibits magnetic anisotropy, and random chemical order otherwise. Furthermore, atomic pair correlation anisotropy was evidenced only in the EXAFS signal from the next neighbors to the absorbing Co atoms and from multiple scattering paths focused through the next neighbors. This suggests that the Co clusters are no more than a few atoms in extent in the plane and one monolayer in extent out of the plane. Our EXAFS results confirm the correlation between perpendicular magnetic anisotropy and two-dimensional Co segregation in CoPt(3) alloy films, and establish a length scale on the order of 10 Å for the Co clusters.

  14. The effects of tungsten concentration on crystalline structure and perpendicular magnetic anisotropy of Co-W films

    SciTech Connect

    Yin, S. Q.; Wu, Y.; Xu, X. G. Jiang, Y.; Wang, H.; Wang, J.P.

    2014-12-15

    In this study, Co-W thin films deposited by DC magnetron sputtering were demonstrated to be perpendicular magnetic anisotropic with large magnetocrystalline anisotropy energy (MAE). Thermodynamic calculations based on Miedema’s semi-empirical model have been used to estimate the phase in this binary alloy system. Based on the thermodynamic calculations results, a series of Co-W thin films were deposited on amorphous Ta underlayer with different tungsten concentrations. According to the X-ray diffraction results, the crystal structure of Co-W thin films is consistent well with that of thermodynamic calculations. Large MAE of Co-W thin films can be obtained with K{sub u} over 2.1 × 10{sup 5} J/m{sup 3} after vacuum annealing. The perpendicular coercivity (H{sub c}) of Co-W thin film reaches 9.1 × 10{sup 4} A/m. Therefore, the Co-W thin film is considered as a potential choice of high-density magnetic recording media materials.

  15. In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

    NASA Astrophysics Data System (ADS)

    Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wu, Hao; Wong, Kin L.; Zhang, Zongzhi; Han, Xiufeng; Khalili Amiri, Pedram; Wang, Kang L.

    2016-05-01

    We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co40Fe40B20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

  16. Large anisotropic Fe orbital moments in perpendicularly magnetized Co2FeAl Heusler alloy thin films revealed by angular-dependent x-ray magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Okabayashi, Jun; Sukegawa, Hiroaki; Wen, Zhenchao; Inomata, Koichiro; Mitani, Seiji

    2013-09-01

    Perpendicular magnetic anisotropy (PMA) in Heusler alloy Co2FeAl thin films sharing an interface with a MgO layer is investigated by angular-dependent x-ray magnetic circular dichroism. Orbital and spin magnetic moments are deduced separately for Fe and Co 3d electrons. In addition, the PMA energies are estimated using the orbital magnetic moments parallel and perpendicular to the film surfaces. We found that PMA in Co2FeAl is determined mainly by the contribution of Fe atoms with large orbital magnetic moments, which are enhanced at the interface between Co2FeAl and MgO. Furthermore, element specific magnetization curves of Fe and Co are found to be similar, suggesting the existence of ferromagnetic coupling between Fe and Co PMA directions.

  17. FePtCu alloy thin films: Morphology, L1{sub 0} chemical ordering, and perpendicular magnetic anisotropy

    SciTech Connect

    Brombacher, C.; Schletter, H.; Daniel, M.; Matthes, P.; Joehrmann, N.; Makarov, D.; Hietschold, M.; Albrecht, M.; Maret, M.

    2012-10-01

    Rapid thermal annealing was applied to transform sputter-deposited Fe{sub 51}Pt{sub 49}/Cu bilayers into L1{sub 0} chemically ordered ternary (Fe{sub 51}Pt{sub 49}){sub 100-x}Cu{sub x} alloys with (001) texture on amorphous SiO{sub 2}/Si substrates. It was found that for thin film samples, which were processed at 600 Degree-Sign C for 30 s, the addition of Cu strongly favors the L1{sub 0} ordering and (001) texture formation. Furthermore, it could be revealed by transmission electron microscopy and electron backscatter diffraction that the observed reduction of the ordering temperature with Cu content is accompanied by an increased amount of nucleation sites forming L1{sub 0} ordered grains. The change of the structural properties with Cu content and annealing temperature is closely related to the magnetic properties. While an annealing temperature of 800 Degree-Sign C induces strong perpendicular magnetic anisotropy (PMA) in binary Fe{sub 51}Pt{sub 49} films, the addition of Cu systematically reduces the PMA. However, due to the enhancement of both the A1-L1{sub 0} phase transformation and the development of the (001) texture with increasing Cu content, lowering of the annealing temperature leads to a shift of the maximum perpendicular magnetic anisotropy towards alloys with higher Cu content. Thus, for an annealing temperature of 600 Degree-Sign C, the highest perpendicular magnetic anisotropy energy is found for the (Fe{sub 51}Pt{sub 49}){sub 91}Cu{sub 9} alloy. The smooth surface morphology, adjustable PMA, and high degree of intergranular exchange coupling make these films suitable for post-processing required for specific applications such as for sensorics or magnetic data storage.

  18. Micromagnetics and microstructure of epitaxially grown Co and Co-Cr films for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Krishnan, K. M.; Takeuchi, T.; Hirayama, Y.; Donnet, D. M.; Honda, Y.; Futamoto, M.

    1994-07-01

    Highly c-axis oriented, single crystal films of Co(1-x)Cr(x) (0 less than or equal to x less than 0.3) have been grown epitaxially on mica substrates by e-beam evaporation. Films grown on Ru underlayers have an average grain size of 50-80 nm, negligibe fcc content, and very narrow c-axis dispersions. For Co films (x = 0), the as-grown magnetization structure are mainly 180 degree domain walls with a uniform distribution of cross-ties for thinner samples (less than or equal to 300 Angstrom), while thicker (greater than 400 Angstrom) ones show stripe domains. These images were analyzed in detail to measure the wall widths and associated energy densities for as-grown, remanent, and ac-magnetized samples. As expected, the magnetic properties of these films are composition dependent. However, for any Cr concentration, these films exhibit the largest saturation magnetization when compared with either sputtered or evaporated samples. This enhancement can be attributed to a nanometer-scale segregation of Cr, which in these samples could be particularly aided by the diffusion on the close-packed planes of the films with very narrow c-axis dispersions. Preliminary x-ray microanalysis and NMR data support this interpretation.

  19. Laser heating and oxygen partial pressure effects on the dynamic magnetic properties of perpendicular CoFeAlO films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Li, Wei; Tang, Minghong; Zhang, Zongzhi; Lou, Shitao; Jin, Q. Y.

    2016-07-01

    The impact of oxidation and laser heating on the dynamic magnetic properties of perpendicularly magnetized Co50Fe25Al25O films has been studied by time-resolved magneto-optical Kerr effect in a fs-laser pump-probe setup. We find that pump laser fluence Fp can affect the effective magnetic anisotropy field and thus the precession frequency f seriously, leading to an increased dependence of effective magnetic damping factor αeff on the external field at higher fluences. Moreover, the αeff increases with increasing the oxygen partial pressure PO2 while the uniaxial anisotropy energy Ku and Landau factor g decrease, owing to the increased proportion of superparamagnetic CoFe oxides formed by over-oxidation. By optimizing both the Fp and PO2, the intrinsic damping factor is determined to be lower than 0.028 for the perpendicular film showing a uniaxial anisotropy energy as high as 4.3×106 erg/cm3. The results in this study provide a promising approach to manipulate the magnetic parameters for possible applications in spintronic devices.

  20. Origin of perpendicular magnetic anisotropy and evolution of magnetic domain structure of amorphous Pr-TM-B (TM=Fe, Co) films

    NASA Astrophysics Data System (ADS)

    Zhang, W. Y.; Shima, H.; Takano, F.; Takenaka, M.; Yamazaki, M.; Masuda, K.; Akinaga, H.; Nagahama, T.; Nimori, S.

    2010-04-01

    In this study, the deposition pressure dependence of the compositional ratio, magnetic domain structure, and perpendicular magnetic anisotropy (PMA) of B-containing PrFe- and PrCo-based films, which are rare-earth-transition-metal (RE-TM) films, was investigated. PrFe- and PrCo-based films were fabricated by magnetron sputtering. The film compositions were controlled in a wide range by varying the deposition pressure. On the basis of experimental results, the residual stress of the films was considered to be the possible origin of their PMA. The films showed strong magneto-optical effects over the entire wavelength range of 300-750 nm. Because of the excellent magnetic and magneto-optical (MO) properties of the films, they have high potential for MO applications at wavelengths of red and blue lasers.

  1. Tunable magnetic anisotropy in perpendicular exchange-coupled CoFeB/(Co/Pt) films

    NASA Astrophysics Data System (ADS)

    You, Long; Lee, Oukjae; Glenn, Terrell; Abdel-Raziq, Haron; Salahuddin, Sayeef

    2015-03-01

    Spintronic materials with strong perpendicular magnetic anisotropy (PMA), such as Co/Pd, Co/Pt and Co/Ni multilayers, have been introduced to improve the functional performance of STT devices (e.g. enhanced thermal stability, scalability and switching speeds of spin memory/logic). Furthermore, by coupling magnetic layers with PMA and longitudinal magnetic anisotropy (LMA), added benefits such as a variable magnetization tilt angle and tunable damping have been shown. In our study, we discuss how to precise control the anisotropy tilt angle by coupling the PMA hard layer (Co/Pt) with an in-plane soft layer (IMA, CoFeB). Due to the competition between the PMA and IMA, the tilted angle can be tuned by varying thickness of IMA. The stack of Pt(5nm)/Co (1nm)/CoFeB(Xnm)/MgO (2nm) (x varied from 0 to 1nm) was deposited by magneto-sputtering system. The magnetic properties were investigated by vibrating sample magnetometer and anomalous Hall effect . The electric transport of microscale devices comprised of that stack were also studied by our probe station with electromagnet. The experiments show the magnetic anisotropy can be tuned well by changing thickness of in plane layer and open a promising new avenue to next generation spintronics devices.

  2. Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]{sub N} thin films

    SciTech Connect

    Kim, T. W.; Choi, Y. H.; Lee, K. J.; Jung, M. H.; Yoon, J. B.; Cho, J. H.; You, C.-Y.

    2015-05-07

    Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]{sub N} multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]{sub N} demonstrate possible potential as a free layer for PMA-based memory devices.

  3. Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]N thin films

    NASA Astrophysics Data System (ADS)

    Kim, T. W.; Choi, Y. H.; Lee, K. J.; Yoon, J. B.; Cho, J. H.; You, C.-Y.; Jung, M. H.

    2015-05-01

    Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]N multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]N demonstrate possible potential as a free layer for PMA-based memory devices.

  4. Growth of perpendicularly magnetized thin films on a polymer buffer and voltage-induced change of magnetic anisotropy at the MgO|CoFeB interface

    NASA Astrophysics Data System (ADS)

    Lam, D. D.; Bonell, F.; Shiota, Y.; Miwa, S.; Nozaki, T.; Tamura, E.; Mizuochi, N.; Shinjo, T.; Suzuki, Y.; Yuasa, S.

    2015-06-01

    We show that perpendicularly magnetized thin films can be grown onto polyimide, a potentially flexible substrate. With polar Kerr magnetometry, we demonstrate that the coercive field of CoFeB thin film can be modulated by applying a back gate voltage. Our proposed multi-layered structure is suitable for surface-sensitive measurements of the voltage-induced change in anisotropy, and could be used to realize flexible spintronics devices.

  5. Effect of carbon mixing on the perpendicular magnetization of [FePt/C] n=4/FePt multilayer nanocomposite films

    NASA Astrophysics Data System (ADS)

    Lee, S. H.; Park, J. K.

    2009-11-01

    The effect of carbon mixing on the perpendicular magnetization of magnetron sputtered FePt thin films was studied using magnetic property measurement, X-ray diffraction, and TEM microscopy. Micromagnetic simulation was carried out to study the effect of texture on the perpendicular coercivity. Unlike general conviction, the mixing of FePt with carbon led to a significant enhancement in the perpendicular magnetization. The maximum enhancement of perpendicular magnetization was observed at about 20 vol% of carbon, where carbon amorphous film started to completely enclose the individual FePt grains. This reason was explained that the epitaxial growth and thus perpendicular texture of ordered FePt grains were maximized due to the relaxation of coherency for epitaxial growth which was maximized in the isolated grains. The perpendicular coercivity reached 8500 Oe, while the in-plane coercivity (120 Oe) remained negligible. The simulation showed that the enhancement of perpendicular texture can largely increase the perpendicular coercivity of FePt:C thin film.

  6. Current-induced spin-orbit torque magnetization switching in a MnGa/Pt film with a perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ranjbar, Reza; Suzuki, Kazuya Z.; Sasaki, Yuta; Bainsla, Lakhan; Mizukami, Shigemi

    2016-12-01

    Current-induced magnetization switching is demonstrated in a micron sized Hall bar consisting of Pt-capped ultrathin ferrimagnetic MnGa films. The films showed a low magnetization M s ≃ 150 kA/m and a large perpendicular magnetic anisotropy (PMA) field μ 0HK\\text{eff} ≃ 2.5 T, indicating a PMA thickness t product K\\text{u}\\text{eff}t ≃ 0.47 mJ/m2, which is relatively larger than those reported for other material films with PMA. Magnetization switching induced by an in-plane electrical current was examined with the application of an in-plane magnetic field. The phase diagram of the switching current vs the in-plane magnetic field is qualitatively consistent with that of the torque due to the spin-Hall effect in the Pt layer.

  7. Multifunctional L1(0) -Mn(1.5)Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.

    PubMed

    Zhu, Lijun; Nie, Shuaihua; Meng, Kangkang; Pan, Dong; Zhao, Jianhua; Zheng, Houzhi

    2012-08-28

    A new kind of multifunctional L1(0) -Mn(1.5)Ga film is demonstrated for the first time. These MBE-grown epitaxial films exhibit pronounced magnetic properties at room temperature, including ultrahigh perpendicular coercivity up to 42.8 kOe, giant perpendicular magnetic anisotropy with a maximum of 21.7 Merg/cm(3) and large magnetic energy products up to 2.60 MGOe, which allow various applications in ultrahigh density recording, spintronics, and permanent magnets.

  8. Disorder-induced domain wall velocity shift at high fields in perpendicularly magnetized thin films

    NASA Astrophysics Data System (ADS)

    Voto, Michele; Lopez-Diaz, Luis; Torres, Luis; Moretti, Simone

    2016-11-01

    Domain wall dynamics in a perpendicularly magnetized system is studied by means of micromagnetic simulations in which disorder is introduced as a dispersion of both the easy-axis orientation and the anisotropy constant over regions reproducing a granular structure of the material. High field dynamics show a linear velocity-field relationship and an additional grain size dependent velocity shift, weakly dependent on both applied field and intrinsic Gilbert's damping parameter. We find the origin of this velocity shift in the nonhomogeneous in-plane effective field generated by the tilting of anisotropy easy axis introduced by disorder. We show that a one-dimensional analytical approach cannot predict the observed velocities and we augment it with the additional dissipation of energy arising from internal domain wall dynamics triggered by disorder. This way we prove that the main cause of higher velocity is the ability of the domain wall to irradiate energy into the domains, acquired with a precise feature of disorder.

  9. Spin-orbit interaction tuning of perpendicular magnetic anisotropy in L1{sub 0} FePdPt films

    SciTech Connect

    Ma, X.; Lüpke, G. E-mail: hbzhao@fudan.edu.cn; He, P.; Ma, L.; Zhou, S. M.; Guo, G. Y. E-mail: hbzhao@fudan.edu.cn; Zhao, H. B. E-mail: hbzhao@fudan.edu.cn

    2014-05-12

    The dependence of perpendicular magnetic anisotropy K{sub u} on spin-orbit coupling strength ξ is investigated in L1{sub 0} ordered FePd{sub 1−x}Pt{sub x} films by time-resolved magneto-optical Kerr effect measurements and ab initio density functional calculations. Continuous tuning of K{sub u} over a wide range of magnitude is realized by changing the Pt/Pd concentration ratio, which strongly modifies ξ but keeps other leading parameters affecting K{sub u} nearly unchanged. Ab initio calculations predict a nearly quadratic dependence of K{sub u} on ξ, consistent with experimental data. K{sub u} increases with increasing chemical order and decreasing thermal spin fluctuations, which becomes more significant for samples with higher Pt concentration. The results demonstrate an effective method to tune K{sub u} utilizing its sensitivity on ξ, which will help fabricate magnetic systems with desirable magnetic anisotropy.

  10. Magnetization reversal of giant perpendicular magnetic anisotropy at the magnetic-phase transition in FeRh films on MgO

    NASA Astrophysics Data System (ADS)

    Odkhuu, Dorj

    2016-02-01

    Based on first-principles calculations, we demonstrate that substitutions of transition metals Ru and Ir, neighboring and same group elements in the periodic table, for the Rh site in the vicinity of surface can induce a substantially large perpendicular magnetic anisotropy (PMA), up to an order of magnitude of 20 erg /cm2 , in FeRh films on MgO. The main driving mechanism for this huge PMA is the interplay between the dx y and dx2-y2 orbital states of the substitutional 4 d and 5 d transition metal atoms with large spin-orbit coupling. Further investigations demonstrate that magnetization direction of PMA undergoes a transition into an in-plane magnetization at the antiferromagnet → ferromagnet phase transition, which provides a viable route for achieving large and switchable PMA associated with the magnetic-phase transition in antiferromagnet spintronics.

  11. Interfacial Dzyaloshinskii-Moriya interaction in perpendicularly magnetized Pt/Co/AlOx ultrathin films measured by Brillouin light spectroscopy

    NASA Astrophysics Data System (ADS)

    Belmeguenai, Mohamed; Adam, Jean-Paul; Roussigné, Yves; Eimer, Sylvain; Devolder, Thibaut; Kim, Joo-Von; Cherif, Salim Mourad; Stashkevich, Andrey; Thiaville, André

    2015-05-01

    Spin waves in perpendicularly magnetized Pt/Co/AlOx/Pt ultrathin films with varying Co thicknesses (0.6-1.2 nm) have been studied with Brillouin light spectroscopy in the Damon-Eshbach geometry. The measurements reveal a pronounced nonreciprocal propagation, which increases with decreasing Co thickness. This nonreciprocity, attributed to an interfacial Dzyaloshinskii-Moriya interaction (DMI), is significantly stronger than asymmetries resulting from surface anisotropies for such modes. Results are consistent with an interfacial DMI constant Ds=-1.7 ±0.11 pJ /m, which favors left-handed chiral spin structures. This suggests that such films below 1 nm in thickness should support chiral states such as skyrmions at room temperature.

  12. AC current rectification in Nb films with or without symmetrical Nb/Ni periodic pinning arrays in perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Pryadun, Vladimir

    2005-03-01

    Rectification of AC current has been observed in plain superconducting Nb films and in Nb/Ni films with symmetric periodic pinning centers. The rectified DC voltage appears for various sample geometries (cross or strip) both along and transverse to the alternating current direction, is nearly anti-symmetric with perpendicular magnetic field and strongly dependent on temperature below Tc. Analyses of the data at different temperatures, drive frequencies from 100kHz to 150MHz and at the different sample sides [1] shows that not far below Tc the rectification phenomena can be understood in terms of generation of electric fields due to local excess of critical current. Further below Tc anisotropic pinning effects could also contribute to the rectification. [1] F.G.Aliev, et al., Cond. Mat.405656. Supported by Comunidad Autonoma de Madrid -CAM/07N/0050/2002

  13. Improvement of magnetic intergranular isolation and evaluation of read/write characteristics on SmCo 5 perpendicular magnetic thin films

    NASA Astrophysics Data System (ADS)

    Asahi, Toru; Koizumi, Isao; Egawa, Yuko; Yoshino, Masahiro; Sugiyama, Atsushi; Hokkyo, Jiro; Kiya, Takanori; Ariake, Jun; Ouchi, Kazuhiro; Osaka, Tetsuya

    2010-12-01

    SmCo 5 alloy is a promising candidate for ultra-high-density perpendicular magnetic recording (PMR) media because of its high uniaxial magnetocrystalline anisotropy Ku of more than 1.1×10 8 erg/cm 3. Previously, we successfully achieved high Ku in a sputter-deposited SmCo 5 thin film by introducing a Cu/Ti dual underlayer. However, in order to apply the SmCo 5 films to practical PMR media, it is necessary to decrease medium noise. A granulated magnetic film comprising of small and magnetically decoupled grains is effective in reducing the medium noise. In this paper, we have proposed a new granular film that is fabricated by partial thermodiffusion of Cu between the Sm-Co continuous layer and the Cu underlayer, which is granulated using compositional segregation caused by the addition of Ta 2O 5. We have analyzed the magnetic properties, magnetic domain size, and magnetization reversal process of the proposed SmCo 5 film. The magnetic domain size decreased and the magnetization reversal process changed from the magnetic-wall-motion mode to a coherent rotation mode to some extent on isolation of magnetic grains. The read/write characteristics of granulated SmCo 5 double-layered media were also evaluated. The medium noise decreased and the signal-to-noise ratio increased for the granulated double-layered (PMR) medium.

  14. Tuning the magnetic properties and surface morphology of D022 Mn3-δGa films with high perpendicular magnetic anisotropy by N doping

    NASA Astrophysics Data System (ADS)

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2016-10-01

    We report the tunable magnetic properties and the smoothened surface morphology of epitaxial D022 Mn-Ga (Mn3Ga and Mn2.5Ga) films by N doping using reactive sputtering at 480 °C. The 50 nm thick Mn-Ga films grown with the N2/Ar gas flow rate (η) up to 0.66% showed 33%-50% reduction in the saturation magnetization compared to non-doped Mn-Ga. In particular, a single D022 phase was obtained in an optimal η range for Mn2.5Ga, resulted in the perpendicular magnetic anisotropy energy density of ˜1 MJ/m3 with 33% reduction in magnetization. Furthermore, the introduction of N provided the smoothened surface morphology at 50 nm thickness despite its high growth temperature, which is advantageous for thin film device applications.

  15. Polarized neutron reflectivity study of perpendicular magnetic anisotropy in MgO/CoFeB/W thin films

    NASA Astrophysics Data System (ADS)

    Ambaye, Haile; Zhan, Xiao; Li, Shufa; Lauter, Valeria; Zhu, Tao

    In this work we study the origin of PMA in MgO/CoFeB/W trilayer systems using polarized neutron reflectivity. Recently, the spin Hall effect in the heavy metals, such as Pt and Ta, has been of significant interest for highly efficient magnetization switching of the ultrathin ferromagnets sandwiched by such a heavy metal and an oxide, which can be used for spintronic based memory and logic devices. Most work has focused on heavy-metal/ferromagnet/oxide trilayer (HM/FM/MO) structures with perpendicular magnetic anisotropy (PMA), where the oxide layer plays the role of breaking inversion symmetry .No PMA was found in W/CoFeB/MgO films. An insertion of Hf layer in between the W and CoFeB layers, however, has been found to create a strong PMA. Roughness and formation of interface alloys by interdiffusion influences the extent of PMA. We intend to identify these influences using the depth sensitive technique of PNR. In our previous study, we have successfully performed polarized neutron reflectometry (PNR) measurements on the Ta/CoFeB/MgO/CoFeB/Ta thin film with MgO thickness of 1 nm. The PNR measurements were carried out using the BL-4A Magnetic Reflectometer at SNS. This work has been supported by National Basic Research Program of China (2012CB933102). Research at SNS was supported by the Office of BES, DOE.

  16. Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

    NASA Astrophysics Data System (ADS)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-07-01

    We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

  17. Perpendicular magnetic anisotropy in ultrathin Co|Ni multilayer films studied with ferromagnetic resonance and magnetic x-ray microspectroscopy

    NASA Astrophysics Data System (ADS)

    Macià, F.; Warnicke, P.; Bedau, D.; Im, M.-Y.; Fischer, P.; Arena, D. A.; Kent, A. D.

    2012-11-01

    Ferromagnetic resonance (FMR) spectroscopy, x-ray magnetic circular dichroism (XMCD) spectroscopy and magnetic transmission soft x-ray microscopy (MTXM) experiments have been performed to gain insight into the magnetic anisotropy and domain structure of ultrathin Co|Ni multilayer films with a thin permalloy layer underneath. MTXM images with a spatial resolution better than 25 nm were obtained at the Co L3 edge down to an equivalent thickness of Co of only 1 nm, which establishes a new lower boundary on the sensitivity limit of MTXM. Domain sizes are shown to be strong functions of the anisotropy and thickness of the film.

  18. Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film

    PubMed Central

    Shirsath, Sagar E.; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

    2016-01-01

    Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate. PMID:27435010

  19. Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film.

    PubMed

    Shirsath, Sagar E; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

    2016-07-20

    Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate.

  20. Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film

    NASA Astrophysics Data System (ADS)

    Shirsath, Sagar E.; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

    2016-07-01

    Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate.

  1. Formation of Co nanodisc with enhanced perpendicular magnetic anisotropy driven by Ga+ ion irradiation on Pt/Co/Pt films

    NASA Astrophysics Data System (ADS)

    Sakamaki, M.; Amemiya, K.; Sveklo, I.; Mazalski, P.; Liedke, M. O.; Fassbender, J.; Kurant, Z.; Wawro, A.; Maziewski, A.

    2016-11-01

    The origin of magnetic phase transition from in-plane to perpendicular magnetic anisotropy (PMA) of Pt/Co/Pt thin film by Ga+ ion irradiation at fluences of 1 -5 ×1015 ions /cm2 is investigated by means of x-ray magnetic circular dichroism (XMCD) and extended x-ray absorption fine structure (EXAFS) analyses. We find that Pt and Co atoms are mixed with each other and that Co is oxidized near the surface due to removal of the Pt overlayer. Furthermore, polarization-dependent EXAFS analysis shows that Co is firstly dispersed as separated single-atom-thick sheets in a Pt matrix at 1 ×1015 ions /cm2, then the Co sheets are divided into a few Å clusters at 5 ×1015 ions /cm2, which are regarded as nanodiscs parallel to the film plane. This process is accompanied by the appearance of an out-of-plane magnetization component and a remanence peak is observed. Because we do not observe an enhancement in anisotropy of Co orbital moment which leads to change in magnetic anisotropy through the transition at about 5 ×1015 ions /cm2, it might be possible that such nanodisc formation induces increase of magnetic anisotropy via a shape effect. By comparing with the phase transition observed at lower fluence [Phys. Rev. B 86, 024418 (2012), 10.1103/PhysRevB.86.024418], we find that the mechanism of two transitions is different, i.e., the transition at lower fluence is caused by anisotropy of orbital moment due to structural strain, while the present transition is possibly by shape effect due to nanodisc formation.

  2. Control of perpendicular magnetic anisotropy and intrinsic Gilbert damping in L10 ordered FePt(Pd) thin films

    NASA Astrophysics Data System (ADS)

    Ma, Xin; He, Pan; Ma, Li; Guo, Guangyu; Zhao, Haibin; Zhou, Shiming; Luepke, Gunter

    2014-03-01

    The dependence of perpendicular magnetic anisotropy (PMA) and intrinsic Gilbert damping α0 on some leading parameters, such as spin-orbital coupling strength ξ, are investigated in L10 ordered FePt(Pd) thin films by time-resolved magneto-optical Kerr effect measurements and spin dependent ab initio calculations. Continuous tuning of PMA and α0 over a wide range of magnitude is realized by modulating the chemical substitution and ordering. Spin orbital coupling strength can be effectively adjusted by replacing Pt with Pd atoms, which keeps other leading parameters with negligible changes. Measured PMA and α0 from experiment are proportional to ξ 1 . 6 and ξ2 at 200K, while first principle calculations predict for both a quadratic dependence on ξ. The degree of chemical order in real samples can also significantly affect PMA and α0through leading parameters other than spin orbital coupling strength.

  3. Ru Catalyst-Induced Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta/MgO Multilayered Films.

    PubMed

    Liu, Yiwei; Zhang, Jingyan; Wang, Shouguo; Jiang, Shaolong; Liu, Qianqian; Li, Xujing; Wu, Zhenglong; Yu, Guanghua

    2015-12-09

    The high oxygen storage/release capability of the catalyst Ru is used to manipulate the interfacial electronic structure in spintronic materials to obtain perpendicular magnetic anisotropy (PMA). Insertion of an ultrathin Ru layer between the CoFeB and Ta layers in MgO/CoFeB/Ta/MgO films effectively induces PMA without annealing. Ru plays a catalytic role in Fe-O-Ta bonding and isolation at the metal-oxide interface to achieve moderate interface oxidation. In contrast, PMA cannot be obtained in the sample with a Mg insertion layer or without an insertion layer because of the lack of a catalyst. Our work would provide a new approach toward catalyst-induced PMA for future CoFeB-based spintronic device applications.

  4. Structural, electronic, and magnetic properties of perpendicularly magnetised Mn2RhSn thin films

    NASA Astrophysics Data System (ADS)

    Meshcheriakova, Olga; Köhler, Albrecht; Ouardi, Siham; Kondo, Yukio; Kubota, Takahide; Chandra, Shekhar; Karel, Julie; Barbosa, Carlos V.; Stinshoff, Rolf; Sahoo, Roshnee; Ueda, Shigenori; Ikenaga, Eiji; Mizukami, Shigemi; Chadov, Stanislav; Ebke, Daniel; Fecher, Gerhard H.; Felser, Claudia

    2015-04-01

    Epitaxial thin films of Mn2RhSn were grown on a MgO(0 0 1) substrate by magnetron co-sputtering of the constituents. An optimised range of temperature for heat treatment was used to stabilise the tetragonal structure and to prevent the capping Rh layer from diffusing into the Heusler layer. Electronic and magnetic properties were analysed by hard x-ray photoelectron spectroscopy as well as field- and temperature-dependent Hall and resistivity measurements. The measured valence spectra are in good agreement with the calculated density of states. The measured saturation magnetisation corresponds to a magnetic moment of 1 μB in the primitive cell. The magnetisation measurements revealed an out-of-plane anisotropy energy of 89 kJ m-3 and a maximum energy product of 3.3 kJ m-3. The magnetoresistance ratio is 2% for fields of 9 T. The lattice parameter of the compound has a very small mismatch with MgO, which makes it promising for coherent electron tunnelling phenomena.

  5. Spin-orbit torques in Ta/TbxCo100-x ferrimagnetic alloy films with bulk perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ueda, Kohei; Mann, Maxwell; Pai, Chi-Feng; Tan, Aik-Jun; Beach, Geoffrey S. D.

    2016-12-01

    We quantified the bulk perpendicular magnetic anisotropy (PMA) and spin-orbit torques (SOTs) in bilayer Ta/TbxCo100-x ferrimagnetic alloy films with varying Tb concentration. The coercivity increases dramatically with increasing TbxCo100-x thickness and is enhanced by the presence of a Ta underlayer. The Ta underlayer simultaneously serves as a source of SOT due to the spin Hall effect, which we show provides an efficient means to manipulate the magnetization in bulk PMA materials. It is further shown that the sign of the anomalous Hall voltage is different for rare-earth (RE) and transition-metal (TM) dominated alloy compositions, whereas the sign of the SOT effective field remains the same, suggesting that the former is related to the TM sublattice magnetization whereas the latter is related to the net magnetization. Our results suggest that Ta/TbxCo100-x is a potential candidate for spin-orbitronic device applications and give insight into spin transport and SOTs in rare-earth/transition-metal alloys.

  6. Enhancement of perpendicular magnetic anisotropy and coercivity in ultrathin Ru/Co/Ru films through the buffer layer engineering

    NASA Astrophysics Data System (ADS)

    Kolesnikov, Alexander G.; Stebliy, Maxim E.; Ognev, Alexey V.; Samardak, Alexander S.; Fedorets, Aleksandr N.; Plotnikov, Vladimir S.; Han, Xiufeng; Chebotkevich, Ludmila A.

    2016-10-01

    We present results on a study of the interplay between microstructure and the magnetic properties of ultrathin Ru/Co/Ru films with perpendicular magnetic anisotropy (PMA). To induce PMA in the Co layer, we experimentally determined thicknesses of the buffer and capping layers of Ru. The maximum value of PMA was observed for the Co thickness of 0.9 nm with the 3 nm thick capping layer. The effective anisotropy field (H eff) and coercive force (H c) of the Co layer are very sensitive to the Ru buffer layer thickness (t b). The values of H eff and H c increase approximately by two and ten times, correspondingly, when t b changes from 6 to 20 nm, owing to an increase in volume fraction of the crystalline phase as a result of the grains’ growth. PMA is found to be mainly enhanced by elastic strains induced by the lattice mismatch on the Ru/Co and Co/Ru interfaces, leading to the deformation of the Co lattice. The surface impact is determined to be less than 10% of the magneto-elastic contribution to the effective anisotropy. Observation of the magnetic domain structure by means of polar Kerr microscopy reveals that out-of-plane magnetization reversal occurs through the nucleation, growth, and annihilation of domains, where the average size drastically rises with the increasing t b.

  7. Perpendicular magnetic anisotropy, unconventional magnetization texture and extraordinary gradual spin reorientation transition of cobalt films in contact with graphene (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Rougemaille, Nicolas; Vu, Anh Duc; Chen, Gong; N'Diaye, Alpha T.; Schmid, Andreas K.; Coraux, Johann

    2016-10-01

    Owing to its peculiar electronic band structure, high carrier mobility and long spin diffusion length, graphene is a promising two-dimensional material for microelectronics and spintronics. Graphene also shows interesting magnetic properties when in contact with a ferromagnetic metal (FM). For instance, graphene carries a net magnetic moment when deposited on Fe/Ni(111), and a significant spin splitting can be induced in graphene due to proximity with a heavy element. While these results illustrate potential advantages of integrating graphene within a magnetic stack, the influence of graphene on the magnetic properties of a FM is still largely unexplored. In particular, non-magnetic overlayers generally affect the magnetic anisotropy energy (MAE) of thin layers, where interfaces play an important role. We can then wonder how an interface with graphene would influence the MAE of a thin FM film. Using spin-polarized low-energy electron microscopy, we study how a graphene overlayer affects the magnetic properties of atomically flat, nm-thick Co films grown on Ir(111). In this contribution, we report several astonishing magnetic properties of graphene-covered Co films: 1) Perpendicular magnetic anisotropy is favored over an unusually large thickness range, 2) Vectorial magnetic imaging reveals an extraordinarily gradual thickness-dependent spin reorientation transition (SRT), 3) During the SRT, cobalt films are characterized by an unconventional spin texture, 4) Spectroscopy measurements indicate that incident spin-polarized electrons do not suffer substantial spin-dependent collisions a few electron-Volts above the vacuum level. These properties strikingly differ from those of pristine cobalt films and could open new prospects in surface magnetism and spintronics.

  8. Interfacial contributions to perpendicular magnetic anisotropy in Pd/Co2MnSi/MgO trilayer films

    NASA Astrophysics Data System (ADS)

    Fu, Huarui; You, Caiyin; Li, Yunlong; Wang, Ke; Tian, Na

    2016-05-01

    Heusler alloy Co2MnSi is widely selected as the ferromagnetic layer to achieve a giant tunneling magnetic resistance (TMR). It is also one of the most promising materials for potential spintronic applications of magnetic random access memory (MRAM) due to the high spin polarization, in which the configuration of perpendicular magnetic anisotropy (PMA) possesses great advantages over the in-plane ones. Therefore, it is highly desirable to investigate the PMA effects of the Co2MnSi layer with a suitable stack structure. In this work, a strong PMA (1.61  ×  106 erg cm-3) is demonstrated in the system of Pd/Co2MnSi/MgO trilayer films. The contributions of the interfaces beside the ferromagnetic Co2MnSi layer were quantitatively clarified. The interfacial anisotropy K s,MgO of 0.79 erg cm-2 at the Co2MnSi/MgO interface is larger than the K s,Pd value of 0.26 erg cm-2 at the Pd/Co2MnSi interface. Due to the dual interfacial effects, the strong PMA can be sustained at the high annealing temperature with a thick Co2MnSi layer of about 4.9 nm, which is favorable to the potential spintronic application. The Mn-O bonding was also found to be enriched at the Co2MnSi/MgO interface for the annealed Pd/Co2MnSi (3.4 nm)/MgO film with the large PMA, showing an experimental evidence for the theoretical results of the Mn-O bonding contribution to PMA.

  9. First-principles calculations of perpendicular magnetic anisotropy in Fe1-x Co x /MgO(001) thin films.

    PubMed

    Cai, Guanzhi; Wu, Zhiming; Guo, Fei; Wu, Yaping; Li, Heng; Liu, Qianwen; Fu, Mingming; Chen, Ting; Kang, Junyong

    2015-01-01

    The perpendicular magnetic anisotropy (PMA) of Fe1-x Co x thin films on MgO(001) was investigated via first-principles density-functional calculations. Four different configurations were considered based on their ground states: Fe/MgO, Fe12Co4/MgO, Fe10Co6/MgO, and Fe8Co8/MgO. As the Co composition increases, the amplitude of PMA increases first from Fe/MgO to Fe12Co4/MgO, and then decreases in Fe10Co6/MgO; finally, the magnetic anisotropy becomes horizontal in Fe8Co8/MgO. Analysis based on the second-order perturbation of the spin-orbit interaction was carried out to illustrate the contributions from Fe and Co atoms to PMA, and the differential charge density was calculated to give an intuitive comparison of 3d orbital occupancy. The enhanced PMA in Fe12Co4/MgO is ascribed to the optimized combination of occupied and unoccupied 3d states around the Fermi energy from both interface Fe and Co atoms, while the weaker PMA in Fe10Co6/MgO is mainly attributed to the modulation of the interface Co-d xy orbital around the Fermi energy. By adjusting the Co composition in Fe1-x Co x , the density of states of transitional metal atoms will be modulated to optimize PMA for future high-density memory application.

  10. Contribution from Ising domains overlapping out-of-plane to perpendicular magnetic anisotropy in Mn4N thin films on MgO(001)

    NASA Astrophysics Data System (ADS)

    Foley, Andrew; Corbett, Joseph; Khan, Alam; Richard, Andrea L.; Ingram, David C.; Smith, Arthur R.; Zhao, Lianshui; Gallagher, James C.; Yang, Fengyuan

    2017-10-01

    Single phase ε -Mn4N thin and ultrathin films are grown on MgO(001) using molecular beam epitaxy. Reflection high-energy electron diffraction and out-of-plane X-ray diffraction measurements are taken for each sample in order to determine the in- and out-of-plane strain for each sample. Vibrating sample magnetometry and superconducting quantum interference device measurements, which are performed on the thin and ultrathin films respectively, are used to plot the magnetization of each sample versus both in- and out-of-plane H → -fields and to determine the magnitude of perpendicular magnetic anisotropy in these films. Three significant components of perpendicular magnetic anisotropy are observed in these films and are attributed to sample strain (1 component) and shape (2 components). Among these components, the most significant component (0.8 - 4.9 Merg/cm3) is identified as a second term of shape anisotropy, which possesses a negative linear relationship with sample thickness over the range from 9 nm to 310 nm. Atomic (magnetic) force microscopy measurements show the presence of a surface localized magnetic polarization (22-82 %), which increases with decreasing thickness, when the net magnetizations of the films are zero. The second term of shape anisotropy as well as the surface localized polarization, which each depend on sample thickness, are each regarded as a consequence of Ising domains overlapping out-of-plane in these films.

  11. Perpendicular Magnetic Anisotropy in CoSiB/Pd/CoSiB Trilayer Thin Films with Varying Pd-Layer Thicknesses.

    PubMed

    Jung, Sol; Kim, Taewan; Yim, Haein

    2015-11-01

    We investigate the magnetic properties of CoSiB (1 5-Å-thickness)/Pd (Pd thickness = 8, 11, 14, 17, 20, 24, 27, 29 and 33 Å)/CoSiB (15-Å-thickness) trilayer thin films. The CoSiB-layer thickness was fixed to 15 Å, while the Pd-layer thickness was varied from 8-33 Å. In this paper, we present a new type of thin film containing amorphous Co75Si15B10 and Pd. We investigate the magnetic properties of a fabricated CoSiB/Pd/CoSiB trilayer thin film with perpendicular magnetic anisotropy, and determine the correlation between the magnetic properties and the nonmagnetic Pd-layer thickness. With increasing Pd-layer thickness, both the coercivity and the saturation magnetization decreased. Furthermore, the maximum values of the magnetic anisotropy were calculated as 0.3 x 10(6) erg/cc. In order to examine the difference between the in-plane magnetic anisotropy and perpendicular magnetic anisotropy, magnetic force microscopy images of the CoSiB (15-Å-thickness)/Pd (Pd thickness = 8 and 14 Å)/CoSiB (15-Å-thickness) trilayer thin films were obtained.

  12. The effect of AlN underlayer on c-axis orientation of barium ferrite thin films for perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Kakizaki, Koichi; Watanabe, Hideaki; Hiratsuka, Nobuyuki

    2001-10-01

    The effect of AlN underlayer on c-axis orientation of barium ferrite thin films and their magnetic properties have been investigated. On the AlN underlayer with a thickness of 30 nm, barium ferrite film with a thickness of 50 nm was deposited at room temperature. As the deposited barium ferrite film was not crystallized, it was post-annealed at 800°C for 5 h in air. The c-axis of crystallized barium ferrite was oriented perpendicular to the film surface that was caused by the effect of the AlN underlayer.

  13. Effect of process temperature on structure and magnetic properties of perpendicularly magnetized D022-Mn3Ge thin films on a Cr buffer layer

    NASA Astrophysics Data System (ADS)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-08-01

    We investigated the effect of post-annealing on the perpendicular magnetic anisotropy constant (Ku) and surface roughness (Ra) of Mn3Ge thin films grown at comparatively low temperatures (room temperature, 150, 200, and 250 °C) on Cr buffer layers. The films grown at ≥200 °C exhibit a D022-ordered crystal structure in an as-deposited state. The post-annealing process demonstrates differences in trends between the 200-°C-grown film and the 250-°C-grown film. The 200-°C-grown film displays significant degradation of Ku and an increase in Ra upon annealing at >300 °C because of its poor thermal durability, while the 250-°C-grown film is still intact even at 500 °C. The 250-°C-grown film post-annealed at 300 °C displays relatively high Ku while Ra remains low. It may be possible to grow D022-Mn3Ge with higher Ku and low Ra using a buffer-layer material with a lattice-matched crystal structure with D022-Mn3Ge and higher thermal durability than Cr.

  14. Perpendicular magnetic anisotropy of Mn{sub 4}N films on MgO(001) and SrTiO{sub 3}(001) substrates

    SciTech Connect

    Yasutomi, Yoko; Ito, Keita; Sanai, Tatsunori; Toko, Kaoru; Suemasu, Takashi

    2014-05-07

    We grew Mn{sub 4}N epitaxial thin films capped with Au layers on MgO(001) and SrTiO{sub 3}(001) substrates by molecular beam epitaxy. Perpendicular magnetic anisotropy (PMA) was confirmed in all the samples at room temperature from the magnetization versus magnetic field curves using superconducting quantum interference device magnetometer. From the ω-2θ x-ray diffraction (XRD) and ϕ-2θ{sub χ} XRD patterns, the ratios of perpendicular lattice constant c to in-plane lattice constant a, c/a, were found to be about 0.99 for all the samples. These results imply that PMA is attributed to the in-plane tensile strain in the Mn{sub 4}N films.

  15. Influence of domain structure induced coupling on magnetization reversal of Co/Pt/Co film with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Matczak, Michał; Schäfer, Rudolf; Urbaniak, Maciej; Kuświk, Piotr; Szymański, Bogdan; Schmidt, Marek; Aleksiejew, Jacek; Stobiecki, Feliks

    2017-01-01

    A magnetic multilayer of substrate/Pt-15 nm/Co-0.8 nm/Pt-wedge 0-7 nm/Co-0.6 nm/Pt-2 nm structure is characterized by a perpendicular anisotropy of the Co layers and by graded interlayer coupling between them. Using magnetooptical Kerr microscopy we observed a distinct influence of magnetic domains in one Co layer on the nucleation field and positions of nucleation sites of reversed domains in the second Co layer. For sufficiently strong interlayer coupling a replication of magnetic domains from the magnetically harder layer to the magnetically softer layer is observed.

  16. Strain relaxation and enhanced perpendicular magnetic anisotropy in BiFeO{sub 3}:CoFe{sub 2}O{sub 4} vertically aligned nanocomposite thin films

    SciTech Connect

    Zhang, Wenrui; Jiao, Liang; Li, Leigang; Jian, Jie; Khatkhatay, Fauzia; Chu, Frank; Chen, Aiping; Jia, Quanxi; MacManus-Driscoll, Judith L.; Wang, Haiyan

    2014-02-10

    Self-assembled BiFeO{sub 3}:CoFe{sub 2}O{sub 4} (BFO:CFO) vertically aligned nanocomposite thin films have been fabricated on SrTiO{sub 3} (001) substrates using pulsed laser deposition. The strain relaxation mechanism between BFO and CFO with a large lattice mismatch has been studied by X-ray diffraction and transmission electron microscopy. The as-prepared nanocomposite films exhibit enhanced perpendicular magnetic anisotropy as the BFO composition increases. Different anisotropy sources have been investigated, suggesting that spin-flop coupling between antiferromagnetic BFO and ferrimagnetic CFO plays a dominant role in enhancing the uniaxial magnetic anisotropy.

  17. Perpendicular magnetic anisotropy induced by tetragonal distortion of FeCo alloy films grown on Pd(001).

    PubMed

    Winkelmann, Aimo; Przybylski, Marek; Luo, Feng; Shi, Yisheng; Barthel, Jochen

    2006-06-30

    We grew tetragonally distorted FexCo1-x alloy films on Pd(001). Theoretical first-principles calculations for such films predicted a high saturation magnetization and a high uniaxial magnetic anisotropy energy for specific values of the lattice distortion c/a and the alloy composition x. The magnetic anisotropy was investigated using the magneto-optical Kerr effect. An out-of-plane easy axis of magnetization was observed for Fe0.5Co0.5 films in the thickness range of 4 to 14 monolayers. The magnetic anisotropy energy induced by the tetragonal distortion is estimated to be almost 2 orders of magnitude larger than the value for bulk FeCo alloys. Using LEED Kikuchi patterns, a change of the easy axis of magnetization can be related to a decrease of the tetragonal distortion with thickness.

  18. Oscillatory behavior of perpendicular magnetic anisotropy in Pt/Co/Al(Ox) films as a function of Al thickness

    NASA Astrophysics Data System (ADS)

    Dahmane, Y.; Arm, C.; Auffret, S.; Ebels, U.; Rodmacq, B.; Dieny, B.

    2009-11-01

    The evolution of the perpendicular magnetic anisotropy of Pt/Co/AlOx structures has been followed by extraordinary Hall Effect measurements as a function of both Al thickness and annealing treatment. A nonmonotonous evolution of the magnetic anisotropy is observed with increasing aluminum thickness, with a maximum around 1.4 nm attributed to the formation of quantum well states in the remaining metallic Al layer. This maximum gradually disappears after annealing. High resolution electron microscopy images indicate that the vanishing of this maximum is associated with homogenization of oxygen throughout the whole Al layer.

  19. Tunable magnetic properties by interfacial manipulation of L1(0)-FePt perpendicular ultrathin film with island-like structures.

    PubMed

    Feng, C; Wang, S G; Yang, M Y; Zhang, E; Zhan, Q; Jiang, Y; Li, B H; Yu, G H

    2012-02-01

    Based on interfacial manipulation of the MgO single crystal substrate and non-magnetic AIN compound, a L1(0)-FePt perpendicular ultrathin film with the structure of MgO/FePt-AIN/Ta was designed, prepared, and investigated. The film is comprised of L1(0)-FePt "magnetic islands," which exhibits a perpendicular magnetic anisotropy (PMA), tunable coercivity (Hc), and interparticle exchange coupling (IEC). The MgO substrate promotes PMA of the film because of interfacial control of the FePt lattice orientation. The AIN compound is doped to increase the difference of surface energy between FePt layer and MgO substrate and to suppress the growth of FePt grains, which takes control of island growth mode of FePt atoms. The AIN compound also acts as isolator of L1(0)-FePt islands to pin the sites of FePt domains, resulting in the tunability of Hc and IEC of the films.

  20. Enhancement of order degree and perpendicular magnetic anisotropy of L10 ordered Fe(Pt,Pd) alloy film by introducing a thin MgO cap-layer

    NASA Astrophysics Data System (ADS)

    Noguchi, Youhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

    2016-07-01

    Fe50PtxPd50-x (at%, x=0-50) alloy films of 10 nm thickness with and without 2-nm-thick MgO cap-layers are prepared on MgO(001) single-crystal substrates by employing a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The influences of MgO cap-layer on the structure and the magnetic properties are investigated. Fe50PtxPd50-x films epitaxially grow on the substrates at 200 °C. The Fe50Pd50 and the Fe50Pt12.5Pd37.5 films are respectively composed of (001) single-crystals with disordered fcc-based (A1) and bcc-based (A2) structures. The films with x>25 consist of mixtures of A1 and A2 crystals. The volume ratio of A2 to A1 crystal decreases with increasing the x value from 25 to 50. The in-plane and out-of-plane lattices are respectively expanded and shrunk due to accommodation of lattice mismatch between film and substrate. When the films are annealed at 600 °C, phase transformation to L10 ordered phase takes place. L10 phase transformation of Fe50PtxPd50-x film is promoted for a sample with MgO cap-layer and the order degree is higher than that without cap-layer. Furthermore, L10 ordering with the c-axis perpendicular to the substrate surface is enhanced for the film with cap-layer. The cap-layer is considered to be giving a tension stress to the magnetic film in lateral direction which promotes L10 ordering with the c-axis perpendicular to the substrate. Deposition of cap-layer is shown effective in achieving higher order degree and in enhancing perpendicular magnetic anisotropy with Fe(Pt,Pd) films.

  1. Control of magnetic anisotropy and magnetic patterning of perpendicular Co/Pt multilayers by laser irradiation

    SciTech Connect

    Schuppler, C.; Habenicht, A.; Guhr, I.L.; Maret, M.; Leiderer, P.; Boneberg, J.; Albrecht, M.

    2006-01-02

    We report an approach to altering the magnetic properties of (111) textured Co/Pt multilayer films grown on sapphire (0001) substrates in a controlled way using single-pulse laser irradiation. The as-grown films reveal a strong perpendicular magnetic anisotropy induced by interfacial anisotropy. We show that laser irradiation can chemically mix the multilayer structure particularly at the interfaces, hence reducing the perpendicular magnetic anisotropy and coercivity in a controlled manner depending on laser fluence. As a result, perpendicular films can also be magnetically patterned into hard and soft magnetic regions using a regular two-dimensional lattice of polystyrene particles acting as an array of microlenses.

  2. Underlayer Effect on Perpendicular Magnetic Anisotropy in Co20Fe60B20\\MgO Films

    PubMed Central

    Chen, P.J.; Iunin, Y.L.; Cheng, S.F.; Shull, R.D.

    2016-01-01

    Perpendicular Magnetic Tunneling Junctions (pMTJs) with Ta\\CoFeB\\MgO have been extensively studied in recent years. However, the effects of the underlayer on the formation of the CoFeB perpendicular magnetic anisotropy (PMA) are still not well understood. Here we report the results of our systematic use of a wide range of elements (Ti, V, Cr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt and Au) encompassed by columns IVA, VA, VIA, VIIA and VIIIA of the periodic table as the underlayer in a underlayer\\Co20Fe60B20\\MgO stack. Our goals were to survey more elements which could conceivably create a PMA in CoFeB and thereby to explore the mechanisms enabling these underlayers to enhance or create the PMA. We found underlayer elements having both an outer shell of 4d electrons (Zr, Nb Mo, and Pd) and 5d electrons (Hf, Ta, W, Re, Ir, and Pt) resulted in the development of a PMA in the MgO-capped Co20Fe60B20. Hybridization between the 3d electrons of the Fe or Co (in the Co20Fe60B20) at the interface with the 4d or 5d electrons of the underlayer is thought to be the cause of the PMA development. PMID:27499549

  3. Underlayer Effect on Perpendicular Magnetic Anisotropy in Co20Fe60B20\\MgO Films.

    PubMed

    Chen, P J; Iunin, Y L; Cheng, S F; Shull, R D

    2016-07-01

    Perpendicular Magnetic Tunneling Junctions (pMTJs) with Ta\\CoFeB\\MgO have been extensively studied in recent years. However, the effects of the underlayer on the formation of the CoFeB perpendicular magnetic anisotropy (PMA) are still not well understood. Here we report the results of our systematic use of a wide range of elements (Ti, V, Cr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt and Au) encompassed by columns IVA, VA, VIA, VIIA and VIIIA of the periodic table as the underlayer in a underlayer\\Co20Fe60B20\\MgO stack. Our goals were to survey more elements which could conceivably create a PMA in CoFeB and thereby to explore the mechanisms enabling these underlayers to enhance or create the PMA. We found underlayer elements having both an outer shell of 4d electrons (Zr, Nb Mo, and Pd) and 5d electrons (Hf, Ta, W, Re, Ir, and Pt) resulted in the development of a PMA in the MgO-capped Co20Fe60B20. Hybridization between the 3d electrons of the Fe or Co (in the Co20Fe60B20) at the interface with the 4d or 5d electrons of the underlayer is thought to be the cause of the PMA development.

  4. Control of the static and high-frequency magnetic properties of perpendicular anisotropic Co–HfN granular films through insertion of HfN interlayers

    NASA Astrophysics Data System (ADS)

    Cao, Yang; Zhang, Yiwen; Ohnuma, Shigehiro; Kobayashi, Nobukiyo; Masumoto, Hiroshi

    2017-04-01

    We propose a multilayer granular structure wherein Hf–nitride (HfN) interlayers are inserted into Co–HfN granular films with perpendicular magnetic anisotropy (PMA) to control their static and high-frequency magnetic properties. The transition between soft ferromagnetic properties and PMA was achieved by varying the thickness of Co–HfN layers (2–30 nm) and HfN interlayers (1–4 nm). The resonance frequency of the Co–HfN (24 nm)/HfN films decreased from 2 to 0.9 GHz with increasing HfN interlayer thickness, owning to the separation of the columnar granules and reduced interlayer interaction between Co–HfN granular layers via a HfN interlayer.

  5. Perpendicular reading of single confined magnetic skyrmions

    PubMed Central

    Crum, Dax M.; Bouhassoune, Mohammed; Bouaziz, Juba; Schweflinghaus, Benedikt; Blügel, Stefan; Lounis, Samir

    2015-01-01

    Thin-film sub-5 nm magnetic skyrmions constitute an ultimate scaling alternative for future digital data storage. Skyrmions are robust noncollinear spin textures that can be moved and manipulated by small electrical currents. Here we show here a technique to detect isolated nanoskyrmions with a current perpendicular-to-plane geometry, which has immediate implications for device concepts. We explore the physics behind such a mechanism by studying the atomistic electronic structure of the magnetic quasiparticles. We investigate from first principles how the isolated skyrmion local-density-of-states which tunnels into the vacuum, when compared with the ferromagnetic background, is modified by the site-dependent spin mixing of electronic states with different relative canting angles. Local transport properties are sensitive to this effect, as we report an atomistic conductance anisotropy of up to ∼20% for magnetic skyrmions in Pd/Fe/Ir(111) thin films. In single skyrmions, engineering this spin-mixing magnetoresistance could possibly be incorporated in future magnetic storage technologies. PMID:26471957

  6. Phase-resolved detection of the spin Hall angle by optical ferromagnetic resonance in perpendicularly magnetized thin films

    NASA Astrophysics Data System (ADS)

    Capua, Amir; Wang, Tianyu; Yang, See-Hun; Rettner, Charles; Phung, Timothy; Parkin, Stuart S. P.

    2017-02-01

    The conversion of charge current to spin current by the spin Hall effect is of considerable current interest from both fundamental and technological perspectives. Measurement of the spin Hall angle, especially for atomically thin systems with large magnetic anisotropies, is not straightforward. Here we demonstrate a hybrid phase-resolved optical-electrical ferromagnetic resonance method that we show can robustly determine the spin Hall angle in heavy-metal/ferromagnet bilayer systems with large perpendicular magnetic anisotropy. We present an analytical model of the ferromagnetic resonance spectrum in the presence of the spin Hall effect, in which the spin Hall angle can be directly determined from the changes in the amplitude response as a function of the spin current that is generated from a dc charge current passing through the heavy-metal layer. Increased sensitivity to the spin current is achieved by operation under conditions for which the magnetic potential is shallowest at the "Smit point." Study of the phase response reveals that the spin Hall angle can be reliably extracted from a simplified measurement that does not require scanning over time or magnetic field but rather only on the dc current. The method is applied to the Pt-Co/Ni/Co system whose spin Hall angle was to date characterized only indirectly and that is especially relevant for spin-orbit torque devices.

  7. Magnetostatic interactions in films for perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Bottoni, G.; Candolfo, D.; Cecchetti, A.

    1999-04-01

    The magnetostatic interactions in CoCr films for perpendicular recording are studied, based on the measurement of ordinary magnetization curves. The method used does not need the evaluation of the remanent magnetization curves, which is difficult to obtain in these media because of the presence of demagnetizing field in the anisotropy direction. The obtained interaction effects are related with the film thickness, Cr content, the presence of a Fe81Ni19 underlayer, and the magnetic properties of the recording media. The interactions are strong in films with large thickness and they are weak when the thickness is small and even weaker in double layer FeNi/CoCr films. This result is correlated with the magnetization reversal mode, which evolves towards incoherent mechanisms when the film thickness decreases and even more in double layers, as a consequence of the greater dispersion in the vertical columnar structure of the CoCr films.

  8. Perpendicular magnetic anisotropy at the interface between ultrathin Fe film and MgO studied by angular-dependent x-ray magnetic circular dichroism

    SciTech Connect

    Okabayashi, J.; Koo, J. W.; Mitani, S.; Sukegawa, H.; Takagi, Y.; Yokoyama, T.

    2014-09-22

    Interface perpendicular magnetic anisotropy (PMA) in ultrathin Fe/MgO (001) has been investigated using angular-dependent x-ray magnetic circular dichroism (XMCD). We found that anisotropic orbital magnetic moments deduced from the analysis of XMCD contribute to the large PMA energies, whose values depend on the annealing temperature. The large PMA energies determined from magnetization measurements are related to those estimated from the XMCD and the anisotropic orbital magnetic moments through the spin-orbit interaction. The enhancement of anisotropic orbital magnetic moments can be explained mainly by the hybridization between the Fe 3d{sub z}{sup 2} and O 2p{sub z} states.

  9. Giant perpendicular magnetic anisotropy energies in CoPt thin films: impact of reduced dimensionality and imperfections

    NASA Astrophysics Data System (ADS)

    Brahimi, Samy; Bouzar, Hamid; Lounis, Samir

    2016-12-01

    The impact of reduced dimensionality on the magnetic properties of the tetragonal L1 0 CoPt alloy is investigated from ab initio considering several kinds of surface defects. By exploring the dependence of the magnetocrystalline anisotropy energy (MAE) on the thickness of CoPt thin films, we demonstrate the crucial role of the chemical nature of the surface. For instance, Pt-terminated thin films exhibit huge MAEs which can be 1000% larger than those of Co-terminated films. Besides the perfect thin films, we scrutinize the effect of defective surfaces such as stacking faults or anti-sites on the surface layers. Both types of defects reduce considerably the MAE with respect to the one obtained for Pt-terminated thin films. A detailed analysis of the electronic structure of the thin films is provided with a careful comparison to the CoPt bulk case. The behavior of the MAEs is then related to the location of the different virtual bound states utilizing second order perturbation theory.

  10. Giant perpendicular magnetic anisotropy energies in CoPt thin films: impact of reduced dimensionality and imperfections.

    PubMed

    Brahimi, Samy; Bouzar, Hamid; Lounis, Samir

    2016-12-14

    The impact of reduced dimensionality on the magnetic properties of the tetragonal L1 0 CoPt alloy is investigated from ab initio considering several kinds of surface defects. By exploring the dependence of the magnetocrystalline anisotropy energy (MAE) on the thickness of CoPt thin films, we demonstrate the crucial role of the chemical nature of the surface. For instance, Pt-terminated thin films exhibit huge MAEs which can be 1000% larger than those of Co-terminated films. Besides the perfect thin films, we scrutinize the effect of defective surfaces such as stacking faults or anti-sites on the surface layers. Both types of defects reduce considerably the MAE with respect to the one obtained for Pt-terminated thin films. A detailed analysis of the electronic structure of the thin films is provided with a careful comparison to the CoPt bulk case. The behavior of the MAEs is then related to the location of the different virtual bound states utilizing second order perturbation theory.

  11. Magnetoelectric switching energy in Cr2O3/Pt/Co perpendicular exchange coupled thin film system with small Cr2O3 magnetization

    NASA Astrophysics Data System (ADS)

    Nozaki, Tomohiro; Al-Mahdawi, Muftah; Pati, Satya Prakash; Ye, Shujun; Shiokawa, Yohei; Sahashi, Masashi

    2017-07-01

    We investigated perpendicular exchange bias switching by a magnetoelectric field cooling process in a Pt-spacer-inserted Cr2O3/Co exchange-coupled system exhibiting small Cr2O3 magnetization. Although higher magnetoelectric switching energies with decreasing Cr2O3 thickness due to the exchange bias were reported in Cr2O3/Co all-thin-film systems, in this study, we demonstrated low-energy switching in a magnetoelectric field cool process regardless of the exchange-bias magnitude; we balanced the exchange-bias energy with the Zeeman energy associated with finite magnetization in Cr2O3. We proposed a guideline for realizing low-energy switching in thin Cr2O3 samples.

  12. Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

    SciTech Connect

    Herrera Diez, L. García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D.; Lamperti, A.; Mantovan, R.; Ocker, B.

    2015-07-20

    This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

  13. Thickness-dependent magnetoelasticity and its effects on perpendicular magnetic anisotropy in Ta/CoFeB/MgO thin films

    NASA Astrophysics Data System (ADS)

    Gowtham, P. G.; Stiehl, G. M.; Ralph, D. C.; Buhrman, R. A.

    2016-01-01

    We report measurements of the in-plane magnetoelastic coupling in both as-deposited and annealed ultrathin Ta/CoFeB/MgO layers as a function of uniaxial strain, conducted using a four-point bending apparatus. While as-deposited samples show only a weak dependence of the magnetoelastic coupling on the CoFeB layer thickness in the ultrathin regime (<2 nm ) , we observe the onset of a strong thickness dependence upon annealing. This dependence can be modeled as arising from a combination of effective surface and volume contributions to the magnetoelastic coupling. We point out that if similar thickness dependence exists for magnetoelastic coupling in response to biaxial strain, then the standard Néel model for the magnetic anisotropy energy acquires a term inversely proportional to the magnetic layer thickness. This contribution can significantly change the overall magnetic anisotropy, and provides a natural explanation for the strongly nonlinear dependence of magnetic anisotropy energy on magnetic layer thickness that is commonly observed for ultrathin annealed CoFeB/MgO films with perpendicular magnetic anisotropy.

  14. Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

    SciTech Connect

    An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Xie, Qian; Zhang, Zhengjun; Wang, Jian

    2015-03-15

    To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glass substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.

  15. Magnetization reversal of patterned disks with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Xiao, Zhuyun; Wang, Xiao; Cheng, X. M.; Liu, Yaohua; Te Velthuis, Suzanne; Rosenmann, Daniel; Divan, Ralu

    2013-03-01

    Magnetic vortex dynamics in magnetic disks have been extensively studied. However, spin dynamics in magnetic disks with perpendicular magnetic anisotropy (PMA) still remain to be fully understood. Magnetic configurations in disks with strong PMA are more complicated than magnetic vortices, resulting in novel spin dynamics with potential applications. In this work, we study the magnetization reversal of Co/Pd multilayered disks with PMA. Magnetic disks (3-8 microns in diameter) with the structure of [Co (0.3 nm)/Pd (0.5 nm)]5/Co(0.3nm) were patterned on Si substrates via direct laser writing lithography, electron beam evaporation, and lift-off methods. A Kerr microscope was used to image magnetization reversal processes at various bias fields. The imaging results revealed a nucleation dominated magnetization reversal process with the growth of dendritic domains. The coercivity of the disks is significantly bigger than that of thin films with the same structure. Quantitative analysis of the real time Kerr imaging results shed light on the magnetization reversal mechanism of the patterned disks with PMA. Work at Bryn Mawr is supported by NSF under Grant No. 1053854. Work at Argonne National Laboratory and use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  16. Random Field effects in perpendicular-anisotropy multilayer films

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Silevitch, Daniel; Rosenbaum, Thomas

    With the application of a magnetic field transverse to the magnetic easy axis, randomly-distributed 3D collections of dipole-coupled Ising spins form a realization of the Random-Field Ising Model. Tuning the strength of the site-specific random field, and hence the disorder, via the applied transverse field regulates the domain reversal energetics and hence the macroscopic hysteresis loop. We extend this approach to two dimensions, using sputtered Perpendicular Magnetic Anisotropy (PMA) Co/Pt multilayer thin films. We characterize the coercive fields and hysteresis loops at a series of temperatures and transverse fields.

  17. Kerr rotation and perpendicular magnetic anisotropy of CoCr films with Al ultrathin interlayers and single-layer CoCr films

    NASA Astrophysics Data System (ADS)

    Hirata, Toyoaki; Takahashi, Takakazu; Hoshi, Youichi; Naoe, Masahiko

    1991-11-01

    The Co81Cr19/Al multilayered films were prepared by using the plasma-free sputtering apparatus. The specimen films with the thicknesses of Co81Cr19 and Al layers lCo-Cr and lAl of 50-170 and 7-14 Å, respectively, were investigated for the Kerr rotation angle θK and the reflectance R of the multilayered films with total thickness of 1500 Å. Films with lCo-Cr and lAl of 138 and 7 Å, respectively, had a θK of 0.21° and R of 0.7 which is larger than Co81Cr19 single-layer films prepared by conventional sputtering where θK and R are 0.036° and 0.4-0.5, respectively. These results indicate that the films were entirely homogeneous, that is, the surface and interior of the films may be almost the same for composition, microstructure and magnetic properties. Consequently, the Co81Cr19 thin films with Al ultrathin interlayers may be useful for microcrystalline magneto-optical media with a high C/N ratio.

  18. Magnetic logic using nanowires with perpendicular anisotropy.

    PubMed

    Jaworowicz, J; Vernier, N; Ferré, J; Maziewski, A; Stanescu, D; Ravelosona, D; Jacqueline, A S; Chappert, C; Rodmacq, B; Diény, B

    2009-05-27

    In addition to a storage function through the magnetization of nanowires, domain wall propagation can be used to trigger magnetic logic functions. Here, we present a new way to realize a pure magnetic logic operation by using magnetic nanowires with perpendicular anisotropy. Emphasis is given on the generation of the logic function 'NOT' that is based on the dipolar interaction between two neighbouring magnetic wires, which favours the creation of a domain wall. This concept has been validated on several prototypes and the results fit well with the expectations.

  19. Large negative thermal expansion of the Co subnetwork measured by EXAFS in highly disordered Nd₁-xCox thin films with perpendicular magnetic anisotropy.

    PubMed

    Díaz, J; Cid, R; Hierro, A; M Álvarez-Prado, L; Quirós, C; Alameda, J M

    2013-10-23

    We have measured a negative thermal expansion (NTE) of the Co subnetwork in amorphous Nd1-xCox (0.78 < x < 0.84) thin films of the order of 1% in volume using linearly polarized EXAFS spectroscopy at RT and 10 K. The expansion, which is anisotropic, is uncorrelated with the perpendicular magnetic anisotropy (PMA) observed in all the films, but correlated with the method used to deposit them. The atomic environments of the Nd atoms resulted in such a strong disorder that Nd-Nd and Nd-Co environments were invisible to EXAFS, and only Co-Co atomic environments were detected. The information on the Nd subnetwork was obtained through its magnetic moment measured by XMCD. These measurements demonstrate an increasing interaction of neodymium atoms with their particular local crystal field as the temperature decreased, suggesting possible structural modifications at their sites. Since the magnetic moment of the cobalt subnetwork remains essentially constant with the temperature, it is proposed that its detected NTE may be caused by the mechanical response of the amorphous network to structural transformations at the Nd sites. These results support that the PMA in RE-TM alloys is localized at the RE sites. The complete absence of EXAFS oscillations in the Nd L3 EXAFS spectra is remarkable: it means that the coherence length of the photoemitted electrons in disordered matter can be strongly reduced from that expected by atomic calculations to the point of being less than first neighbor distances, which is contrary to the common belief that first neighbors are always visible by EXAFS.

  20. Write field asymmetry in perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Li, Zhanjie; Bai, Daniel Z.; Lin, Ed; Mao, Sining

    2012-04-01

    We present a systematic study of write field asymmetry by using micromagnetic modeling for a perpendicular magnetic recording (PMR) writer structure. Parameters investigated include initial magnetization condition, write current amplitude, write current frequency, and initial write current polarity. It is found that the write current amplitude and frequency (data rate) are the dominant factors that impact the field asymmetry. Lower write current amplitude and higher write current frequency will deteriorate the write field asymmetry, causing recording performance (such as bit error rate) degradation.

  1. Spin wave spectra in perpendicularly magnetized permalloy rings

    SciTech Connect

    Zhou, X.; Ding, J.; Adeyeye, A. O.; Kostylev, M.

    2015-03-16

    The dynamic behavior of perpendicularly magnetized permalloy circular rings is systematically investigated as a function of film thickness using broadband field modulated ferromagnetic resonance spectroscopy. We observed the splitting of one spin wave mode into a family of dense resonance peaks for the rings, which is markedly different from the single mode observed for continuous films of the same thickness. As the excitation frequency is increased, the mode family observed for the rings gradually converges into one mode. With the increase in the film thickness, a sparser spectrum of modes is observed. Our experimental results are in qualitative agreement with the dynamic micromagnetic simulations.

  2. Current-driven perpendicular magnetization switching in Ta/CoFeB/[TaOx or MgO/TaOx] films with lateral structural asymmetry

    NASA Astrophysics Data System (ADS)

    Yu, Guoqiang; Chang, Li-Te; Akyol, Mustafa; Upadhyaya, Pramey; He, Congli; Li, Xiang; Wong, Kin L.; Amiri, Pedram Khalili; Wang, Kang L.

    2014-09-01

    We study the current-driven perpendicular magnetization switching in Ta/CoFeB(wedge)/[TaOx or MgO/TaOx] devices with a lateral structural asymmetry introduced by a varying CoFeB thickness. In these devices, an in-plane current can generate a field-like torque and its corresponding effective magnetic field ( H z F L) is out-of-plane, which can deterministically switch perpendicular magnetization at zero magnetic field. Experimental results indicate that the method used for breaking lateral structural symmetry greatly affects the resulting field-like torque, and that the gradient of perpendicular anisotropy, resulting from the CoFeB thickness variation, is not by itself sufficient to give rise to the current-induced H z F L. Analysis of the oxidation gradient at the CoFeB/TaOx interface indicates that the oxidation gradient may play a more important role than the gradient of magnetic anisotropy for the generation of H z F L. For practical applications, the demonstration of perpendicular magnetization switching in Ta/CoFeB(wedge)/MgO/TaOx devices potentially allows for using MgO-based magnetic tunnel junctions for readout in three-terminal memory devices without the need for external magnetic fields.

  3. Origin of perpendicular magnetic anisotropy in Co/Ni multilayers

    NASA Astrophysics Data System (ADS)

    Arora, M.; Hübner, R.; Suess, D.; Heinrich, B.; Girt, E.

    2017-07-01

    We studied the variation in perpendicular magnetic anisotropy of (111) textured Au /N ×[Co /Ni ]/Au films as a function of the number of bilayer repeats N . The ferromagnetic resonance and superconducting quantum interference device magnetometer measurements show that the perpendicular magnetic anisotropy of Co/Ni multilayers first increases with N for N ≤10 and then moderately decreases for N >10 . The model we propose reveals that the decrease of the anisotropy for N <10 is predominantly due to the reduction in the magnetoelastic and magnetocrystalline anisotropies. A moderate decrease in the perpendicular magnetic anisotropy for N >10 is due to the reduction in the magnetocrystalline and the surface anisotropies. To calculate the contribution of magnetoelastic anisotropy in the Co/Ni multilayers, in-plane and out-of-plane x-ray diffraction measurements are performed to determine the spacing between Co/Ni (111) and (220) planes. The magnetocrystalline bulk anisotropy is estimated from the difference in the perpendicular and parallel g factors of Co/Ni multilayers that are measured using the in-plane and out-of-plane ferromagnetic resonance measurements. Transmission electron microscopy has been used to estimate the multilayer film roughness. These values are used to calculate the roughness-induced surface and magnetocrystalline anisotropy coefficients as a function of N .

  4. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy.

    PubMed

    Gopman, D B; Dennis, C L; Chen, P J; Iunin, Y L; Finkel, P; Staruch, M; Shull, R D

    2016-06-14

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

  5. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Gopman, D. B.; Dennis, C. L.; Chen, P. J.; Iunin, Y. L.; Finkel, P.; Staruch, M.; Shull, R. D.

    2016-06-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

  6. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

    PubMed Central

    Gopman, D. B.; Dennis, C. L.; Chen, P. J.; Iunin, Y. L.; Finkel, P.; Staruch, M.; Shull, R. D.

    2016-01-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices. PMID:27297638

  7. Review of perpendicular magnetic recording research at Fujitsu

    NASA Astrophysics Data System (ADS)

    Oshiki, Mitsumasa

    2012-02-01

    Perpendicular magnetic recording (PMR) research and development (R&D) was carried out at Fujitsu for 32 years from 1978 to 2009, separated into three stages. We developed PMR for use in hard disk drives (HDDs). We sputtered Co-Cr alloy thin film onto a disk substrate and evaluated it using thin-film heads. Some interesting results were obtained at each stage. On the way we fabricated 1.8″ HDDs in 1992 and finally shipped the mass-produced PMR HDDs in 2006. Unfortunately, the HDD business at Fujitsu closed down. I would like to review the exceptional PMR research undertaken at Fujitsu.

  8. Effects of the antiferromagnetic spin structure on antiferromagnetically induced perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Wang, Bo-Yao; Tsai, Ming-Shian; Huang, Chun-Wei; Shih, Chun-Wei; Chen, Chia-Ju; Lin, Kai; Li, Jin-Jhuan; Jih, Nae-Yeou; Lu, Chun-I.; Chuang, Tzu-Hung; Wei, Der-Hsin

    2017-09-01

    Antiferromagnetic (AFM) thin films are promising materials for inducing perpendicular magnetic anisotropy (PMA) in adjacent ferromagnetic (FM) films. This study demonstrates that in a selected AFM spin structure with out-of-plane uncompensated moments, the magnitude of the induced PMA in its neighboring Co/Ni film could be significantly enhanced by the establishment of a collinearlike exchange interaction between the volume moments of the AFM film and the perpendicular magnetic FM film. Detailed magnetic hysteresis loops and x-ray analysis revealed a quench of perpendicular surface anisotropy in a monolayered Fe50Mn50/Co /Ni film due to the formation of antiparallel-like coupled Fe and Mn moments. By contrast, the establishment of a three-dimensional quadratic-type AFM spin structure of an Fe50Mn50 film triggered parallel-like out-of-plane uncompensated Fe and Mn moments at the interface and reinforced the PMA induced in the Co/Ni film.

  9. Fabrication of MnAl thin films with perpendicular anisotropy on Si substrates

    NASA Astrophysics Data System (ADS)

    Huang, Efrem Y.; Kryder, Mark H.

    2015-05-01

    For the first time, perpendicularly magnetized L10-ordered MnAl thin films were demonstrated using a MgO seed layer on Si substrates, which is critical to making spintronic devices. Fabrication conditions were selected by systematically varying sputtering parameters (film thickness, DC sputtering power, in situ substrate temperature, and post-annealing temperature) and investigating structural and magnetic properties. Strong perpendicular magnetic anisotropy with coercivity Hc of 8 kOe, Ku of over 6.5 × 106 erg/cm3, saturation magnetization Ms of 300 emu/cm3, and out-of-plane squareness Mr/Ms of 0.8 were achieved. These MnAl film properties were obtained via DC magnetron sputtering at 530 °C, followed by 350 °C annealing under a 4 kOe magnetic field oriented perpendicular to the film plane.

  10. Strain induced enhancement of perpendicular magnetic anisotropy in Co/graphene and Co/BN heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, B. S.; Zhang, J.; Jiang, L. N.; Chen, W. Z.; Tang, P.; Zhang, X.-G.; Yan, Y.; Han, X. F.

    2017-05-01

    Perpendicular magnetic tunnel junctions in the next-generation magnetic memory using current induced magnetization switching will likely rely on a material design that can enhance the perpendicular magnetic anisotropy of heterojunctions containing only light elements. Using first-principles calculations, we investigated the effect of compressive and tensile strain on the perpendicular magnetic anisotropy of light element heterostructures of Co films, Co/graphene, and Co/BN. We found that the perpendicular magnetic anisotropy of Co/graphene is greatly enhanced compared to the Co films, while that of Co/BN is reduced compared to the Co films. In addition, tensile strain can further enhance perpendicular magnetic anisotropy of Co/graphene and Co/BN heterojunctions by 48.5% and 80.8%, respectively, compared to the unstrained systems. A density of state analysis, combined with layer and orbital magnetic anisotropy contributions obtained from a second-order perturbation theory of the spin-orbit coupling, reveals that the tensile strain effect arises from the increase of the hybridization between same spin dx y and dx2-y2 states of the surface Co film. Our results suggest that strain engineering is an effective approach to enhance the perpendicular magnetic anisotropy of light element heterostructures.

  11. Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

    NASA Astrophysics Data System (ADS)

    Chatterjee, Jyotirmoy; Sousa, Ricardo C.; Perrissin, Nicolas; Auffret, Stéphane; Ducruet, Clarisse; Dieny, Bernard

    2017-05-01

    The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable thicknesses. W in the cap boosts up the annealing stability and increases the effective perpendicular anisotropy by 30% compared to the Ta cap. Correspondingly, an increase in the FeCoB critical thickness characterizing the transition from perpendicular to in-plane anisotropy was observed. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode highly robust against annealing up to 570 °C. The stiffening of the overall stack resulting from the W insertion due to its very high melting temperature seems to be the key mechanism behind the extremely high thermal robustness. The Gilbert damping constant of FeCoB with the W/Ta cap was found to be lower when compared with the Ta cap and stable with annealing. The evolution of the magnetic properties of bottom pinned perpendicular magnetic tunnel junctions (p-MTJ) stack with the W2/Ta1 nm cap layer shows back-end-of-line compatibility with increasing tunnel magnetoresistance up to the annealing temperature of 425 °C. The pMTJ thermal budget is limited by the synthetic antiferromagnetic hard layer which is stable up to 425 °C annealing temperature while the storage layer is stable up to 455 °C.

  12. Engineered Heusler Ferrimagnets with a Large Perpendicular Magnetic Anisotropy

    PubMed Central

    Ranjbar, Reza; Suzuki, Kazuya; Sugihara, Atsushi; Miyazaki, Terunobu; Ando, Yasuo; Mizukami, Shigemi

    2015-01-01

    Synthetic perpendicular magnetic anisotropy (PMA) ferrimagnets consisting of 30-nm-thick D022-MnGa and Co2MnSi (CMS) cubic Heusler alloys with different thicknesses of 1, 3, 5, 10 and 20 nm, buffered and capped with a Cr film, are successfully grown epitaxially on MgO substrate. Two series samples with and without post annealing at 400 ∘C are fabricated. The (002) peak of the cubic L21 structure of CMS films on the MnGa layer is observed, even for the 3-nm-thick CMS film for both un-annealed and annealed samples. The smaller remnant magnetization and larger switching field values of CMS (1–20 nm)/MnGa (30 nm) bilayers compared with 30-nm-thick MnGa indicates antiferromagnetic (AFM) interfacial exchange coupling (Jex) between MnGa and CMS films for both un-annealed and annealed samples. The critical thickness of the CMS film for observing PMA with AFM coupling in the CMS/MnGa bilayer is less than 10 nm, which is relatively large compared to previous studies. PMID:28793580

  13. Perpendicular patterned media for high density magnetic storage

    NASA Astrophysics Data System (ADS)

    Wong, Joyce Y.

    2000-11-01

    Current longitudinal thin-film media in magnetic hard- disk drives are facing an oncoming limit caused by the superparamagnetic effect, in which the individual grains in the medium become so small that they are no longer stable against thermal fluctuation. This situation is undesirable as the stored information may be lost within an unexpectedly short time frame. There have been several proposed solutions in addressing the superparamagnetic limit, and one of them is perpendicular patterned media. In this approach, a periodic array of magnetic pillars is defined lithographically on a non-magnetic substrate. Binary data of ``1'' or ``0'' can be stored in each of these elements, which have two possible magnetization directions perpendicular to the plane of the medium. In our perpendicular patterned media design, Ni columns of 150-230nm diameter with a 6:1 aspect ratio are embedded in an (AlGa)2O 3/GaAs substrate. The fabrication procedure uses a combination of high resolution electron beam lithography, dry etching, and electroplating. The high aspect ratio in the column is achieved by taking advantage of the high etching rate and selectivity of AlGaAs/GaAs over (AlGa)2O 3 in the Cl2 chemically assisted ion beam etching process. In addition to being a robust etching mask, the (AlGa)2O3 layer also plays an important role in the chemical mechanical polishing procedure to remove the overplated Ni mushrooms. Once the Ni columns are fabricated, magnetic characterization is performed using magnetic force microscopy and scanning magnetoresistance microscopy. The former measurement confirms that the electroplated Ni columns are magnetic while the latter determines whether the individual columns are stable enough to retain the recorded information. We have successfully demonstrated recording in our 170nm diameter Ni column array arranged in a square format using a commercial read/write head. This is the first demonstration of single magnetic column per bit data storage in a

  14. Magnetic printing characteristics using master disk with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Fujiwara, Naoto; Nishida, Yoichi; Ishioka, Toshihide; Sugita, Ryuji; Yasunaga, Tadashi

    With the increase in recording density and capacity of hard-disk drives (HDD), high speed, high precision and low cost servo writing method has become an issue in HDD industry. The magnetic printing was proposed as the ultimate solution for this issue [1-3]. There are two types of magnetic printing methods, which are 'Bit Printing (BP)' and 'Edge Printing (EP)'. BP method is conducted by applying external field whose direction is vertical to the plane of both master disk (Master) and perpendicular magnetic recording (PMR) media (Slave). On the other hand, EP method is conducted by applying external field toward down track direction of both master and slave. In BP for bit length shorter than 100 nm, the SNR of perpendicular anisotropic master was higher than isotropic master. And the SNR of EP for the bit length shorter than 50 nm was demonstrated.

  15. Pt/Co/oxide and oxide/Co/Pt electrodes for perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Nistor, L. E.; Rodmacq, B.; Auffret, S.; Dieny, B.

    2009-01-01

    This letter presents a study of perpendicular magnetic anisotropy in oxide/Co/Pt structures, which could constitute the upper magnetic electrode of magnetic tunnel junctions. The growth of cobalt layers on SiO2 substrates shows that all 0.6 nm thick Co films are superparamagnetic, whereas perpendicular magnetic anisotropy is obtained for 1.5 nm films after annealing. Co layers grown on various Al and Mg oxides prepared by sputtering also exhibit perpendicular magnetic anisotropy after annealing. Combined with inverse Pt/Co(CoFeB)/oxide stackings, these structures allow preparing tunnel junctions with thicker magnetic electrodes and much better thermal stability than those based on standard Pt/Co multilayers.

  16. Crucial role of interlayer distance for antiferromagnet-induced perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Wang, Bo-Yao; Lin, Po-Han; Tsai, Ming-Shian; Shih, Chun-Wei; Lee, Meng-Ju; Huang, Chun-Wei; Jih, Nae-Yeou; Cheng, Pei-Yu; Wei, Der-Hsin

    2015-12-01

    Antiferromagnetic (AFM) thin films were recently proposed to be an alternative to conventional materials for achieving perpendicular magnetic anisotropy (PMA) in ferromagnetic thin films, because AFM thin films exhibit an advantage of flexible control. Here, we report that antiferromagnet-induced PMA is highly sensitive to interfacial moments of AFM thin films as well as the magnetic interaction of such moments with volume moments, determined according to the vertical interlayer distance. Magnetic hysteresis loops and x-ray magnetic domain imaging revealed the establishment of perpendicular magnetization on face-centered tetragonal (fct)-like Mn/Co/Ni films when covered with monolayered Mn films. A cover of Mn films that exhibit contracted fct- [vertical-to-in-plane lattice constant ratio (c /a )=0.95 ] and expanded fct-like (c /a =1.05 ) structures at different thickness levels induced in-plane magnetic anisotropy and PMA in Co/Ni films, respectively, confirming that the interlayer distance is a crucial parameter for establishing perpendicular magnetization.

  17. Reversal mechanisms and defects in perpendicularly magnetized nanostructures

    NASA Astrophysics Data System (ADS)

    Shaw, Justin

    2009-03-01

    The problem of switching field distributions (SFDs) is currently plaguing developing technologies which rely on uniform arrays of magnetic nanostructures such as bit patterned media, magnetic random access memory (MRAM) and spin-torque oscillators. Most of these technologies are shifting towards the use of perpendicularly magnetized materials due to the increased device performance and thermal stability that can be achieved. SFDs in such perpendicularly magnetized nanostructures can result from dot-to-dot interactions and size distribution, but is largely dominated by material defects [1- 4]. Such defects can arise from both the material deposition process, and post-deposition processing that occurs during nanofabrication. By comparing nanostructures fabricated by deposition on pre-patterned wafers to those fabricated by ion milling of continuous films, we show that the anisotropy of the edge region can be greatly different in each case. The size, temperature, and angular dependences of the reversal field indicate that the reversal mechanism also differs. In contrast to fabrication induced defects, microstructural variations manifest themselves as a random distribution of local anisotropies. We studied the anisotropy distribution in patterned elements by imaging the localized reversal of low anisotropy regions and mapping these sites as a function of applied field using MFM imaging and TEM. In addition, we used simulations to show the effect a small localized region of lower anisotropy material (such as a grain) has on the reversal field of the entire nanostructure. We find that the reversal field depends on both the relative anisotropy of the defect to the film, as well as, the location of the defect within the structure. [4pt] [1] T. Thomson, PRL 96,257204 (2006).[0pt] [2] J.M. Shaw, JAP 101, 023909 (2007).[0pt] [3] J. Lau, APL 92, 012506 (2008).[0pt] [4] J.M. Shaw, PRB 78, 024414 (2008).

  18. Features of ferromagnetic resonance in nanogranular films with perpendicular anisotropy of particles

    NASA Astrophysics Data System (ADS)

    Ryabchenko, S. M.; Timopheev, A. A.; Kalita, V. M.; Stognei, O. V.; Sitnikov, A. V.

    2011-02-01

    Ferromagnetic resonance (FMR) in the blocked state of nanogranular magnetic films with perpendicular anisotropy of granules is considered for the magnetic field, which is perpendicular to the film plane, for the field strengths corresponding to the unsaturated magnetic state of the films. It is shown that in this case FMR response of the film is the sum of contributions from two subensembles of granules with the magnetic moments oriented "up" and "down" with respect to the film plane. These subensembles are coupled through the common demagnetization field of the film. It is established that FMR signals registered with the help of microwave detector direct current and a component of the detector current at the frequency of radiospectrometer magnetic field high frequency modulation are essentially different. It is shown that the distinction arises due to the fact that total magnetization of each of the subensembles and the film as a whole are practically not modulated by the high frequency modulation of the quasistatic magnetic field in the conditions of the ensemble blocked state and for the amplitude of modulation substantially smaller than the coercive field. Results of the phenomenon consideration within a simplified model are in a satisfactory qualitative agreement with the FMR measurement data for a Co0.54(Al2O3)0.46 film, basic characteristics of which satisfy requirements of the model.

  19. X-ray study of aligned magnetic stripe domains in perpendicular multilayers

    SciTech Connect

    Hellwig, O.; Denbeaux, G.P.; Kortright, J.B.; Fullerton, Eric E.

    2003-03-03

    We have investigated the stripe domain structure and the magnetic reversal of perpendicular Co/Pt based multilayers at room temperature using magnetometry, magnetic imaging and magnetic x-ray scattering. In-plane field cycling aligns the stripe domains along the field direction. In magnetic x-ray scattering the parallel stripe domains act as a magnetic grating resulting in observed Bragg reflections up to 5th order. We model the scattering profile to extract and quantify the domain as well as domain wall widths. Applying fields up to {approx}1.2 kOe perpendicular to the film reversibly changes the relative width of up versus down domains while maintaining the overall stripe periodicity. Fields above 1.2 kOe introduce irreversible changes into the domain structure by contracting and finally annihilating individual stripe domains. We compare the current results with modeling and previous measurements of films with perpendicular anisotropy.

  20. Origin of perpendicular magnetic anisotropy in epitaxial Pd /Co /Pd (111 ) trilayers

    NASA Astrophysics Data System (ADS)

    Davydenko, A. V.; Kozlov, A. G.; Ognev, A. V.; Stebliy, M. E.; Samardak, A. S.; Ermakov, K. S.; Kolesnikov, A. G.; Chebotkevich, L. A.

    2017-02-01

    Perpendicular magnetic anisotropy in epitaxial Pd /Co /Pd (111 ) trilayered films grown on Si(111) substrate was investigated. Contributions to perpendicular magnetic anisotropy from the bottom and top Co/Pd interfaces were deduced by replacement of Pd layers by Cu layers and comparative analysis of the magnetic anisotropy in the samples. Perpendicular magnetic anisotropy in Pd/Co/Pd films was induced both by interface electronic effects and by stress caused by lattice mismatch between Pd and Co. Due to asymmetry of the stress in the Co film, the contribution to magnetic anisotropy induced by the bottom Co/Pd interface was stronger than that induced by the top Pd/Co interface. The energy of the perpendicular magnetic anisotropy and asymmetrical contributions from the bottom Co/Pd and top Pd/Co interfaces to anisotropy in Pd/Co/Pd trilayers strongly depend on the thickness of the bottom and top Pd layers and may be precisely controlled. The roughness of the interfaces does not have a large influence on the energy of perpendicular magnetic anisotropy in this system.

  1. Perpendicular magnetic recording—Its development and realization

    NASA Astrophysics Data System (ADS)

    Iwasaki, Shun-ichi

    2012-02-01

    Development of perpendicular magnetic recording is summarized along with learning from the research study. The early stage of perpendicular recording was conducted with the research philosophy of complementarity between perpendicular and horizontal recordings. Although present production of the perpendicular recording HDDs exceeds 600 million per year, development of perpendicular recording experienced the valley of death in the 1990s. The difficult period was overcome by the collaboration system of industrial and academic communities. The research on perpendicular recording brought about development of new research model as well as the historical view of the development of technology and innovation. The huge influence of perpendicular recording on society also taught us the relationship between science and technology with culture and civilization.

  2. Perpendicular reading of single confined magnetic skyrmions

    NASA Astrophysics Data System (ADS)

    Crum, Dax M.; Bouhassoune, Mohammed; Bouaziz, Juba; Schweflinghaus, Benedikt; Blügel, Stefan; Lounis, Samir

    We present the first fully self-consistent first-principles investigation of single chiral magnetic skyrmions as entire entities based on density functional theory. The work is tied to skyrmions with sub-5nm diameters embedded within thin ferromagnetic films stabilized through interfacial Dzyaloshinskii-Moriya interactions. We found that the non-collinearity of the magnetic texture inside the skyrmions leads to spin-mixing of the electronic structure, which can be probed as site-dependent tunneling spin-mixing magnetoresistance (TXMR). The conduction inhomogeneity can reach values up to 20% in Pd/Fe/Ir(111) samples. The non-collinear component of the TXMR has been experimentally verified, validating our theoretical calculations and showing the capability of the TXMR to resolve complex nanoscale spin-textures. The work is carried out with the newly developed Jülich relativistic Korringa-Kohn Rostoker Green function method. D.M.C. is supported by an NSF fellowship. Funding provided by the HGF-YIG Program VH-NG-717.

  3. Highly tunable perpendicularly magnetized synthetic antiferromagnets for biotechnology applications

    NASA Astrophysics Data System (ADS)

    Vemulkar, T.; Mansell, R.; Petit, D. C. M. C.; Cowburn, R. P.; Lesniak, M. S.

    2015-07-01

    Magnetic micro and nanoparticles are increasingly used in biotechnological applications due to the ability to control their behavior through an externally applied field. We demonstrate the fabrication of particles made from ultrathin perpendicularly magnetized CoFeB/Pt layers with antiferromagnetic interlayer coupling. The particles are characterized by zero moment at remanence, low susceptibility at low fields, and a large saturated moment created by the stacking of the basic coupled bilayer motif. We demonstrate the transfer of magnetic properties from thin films to lithographically defined 2 μm particles which have been lifted off into solution. We simulate the minimum energy state of a synthetic antiferromagnetic bilayer system that is free to rotate in an applied field and show that the low field susceptibility of the system is equal to the magnetic hard axis followed by a sharp switch to full magnetization as the field is increased. This agrees with the experimental results and explains the behaviour of the particles in solution.

  4. Highly tunable perpendicularly magnetized synthetic antiferromagnets for biotechnology applications.

    PubMed

    Vemulkar, T; Mansell, R; Petit, D C M C; Cowburn, R P; Lesniak, M S

    2015-07-06

    Magnetic micro and nanoparticles are increasingly used in biotechnological applications due to the ability to control their behavior through an externally applied field. We demonstrate the fabrication of particles made from ultrathin perpendicularly magnetized CoFeB/Pt layers with antiferromagnetic interlayer coupling. The particles are characterized by zero moment at remanence, low susceptibility at low fields, and a large saturated moment created by the stacking of the basic coupled bilayer motif. We demonstrate the transfer of magnetic properties from thin films to lithographically defined 2 μm particles which have been lifted off into solution. We simulate the minimum energy state of a synthetic antiferromagnetic bilayer system that is free to rotate in an applied field and show that the low field susceptibility of the system is equal to the magnetic hard axis followed by a sharp switch to full magnetization as the field is increased. This agrees with the experimental results and explains the behaviour of the particles in solution.

  5. Perpendicular magnetic anisotropy in CoXPd100-X alloys for magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Clark, B. D.; Natarajarathinam, A.; Tadisina, Z. R.; Chen, P. J.; Shull, R. D.; Gupta, S.

    2017-08-01

    CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L10 alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular CoxPd alloy-pinned Co20Fe60B20/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the CoxPd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied CoxPd MTJ stacks. The CoxPd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO2/MgO (13)/CoXPd100-x (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

  6. Perpendicularly magnetized (001)-textured D0{sub 22} MnGa films grown on an (Mg{sub 0.2}Ti{sub 0.8})O buffer with thermally oxidized Si substrates

    SciTech Connect

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-10-28

    We report the growth of (001)-textured polycrystalline D0{sub 22} MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg{sub 0.2}Ti{sub 0.8})O (MTO) buffer layer. The ordered D0{sub 22} MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m{sup 3}, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D0{sub 22} MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates.

  7. MnxGa1-x nanodots with high coercivity and perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Karel, J.; Casoli, F.; Lupo, P.; Celegato, F.; Sahoo, R.; Ernst, B.; Tiberto, P.; Albertini, F.; Felser, C.

    2016-11-01

    A MnxGa1-x (x = 0.70) epitaxial thin film with perpendicular magnetic anisotropy and a large coercivity (μ0Hc = 1 T) was patterned into nanodots using a combined self-assembly nanolithography and plasma etching procedure. Nanostructuring is achieved by self-assembly of polystyrene nanospheres acting as a mask on the magnetic film. This procedure allows easy patterning of a large area although introduced some chemical disorder, which resulted in a soft magnetic component in the magnetic hysteresis loops. However, chemical order was recovered after vacuum annealing at low temperature. The resulting nanodots retain the properties of the original film, i.e. magnetization oriented perpendicular to the particle and large coercivity. Our results suggest this lithography procedure could be a promising direction for nanostructuring tetragonal Heusler alloys.

  8. Influence of inserted Mo layer on the thermal stability of perpendicularly magnetized Ta/Mo/Co{sub 20}Fe{sub 60}B{sub 20}/MgO/Ta films

    SciTech Connect

    Li, Minghua; Lu, Jinhui; Han, Gang; Chen, Xi; Shi, Hui; Yu, Guanghua; Yu, Guoqiang; Li, Xiang; Amiri, Pedram Khalili; Wang, Kang L.

    2016-04-15

    We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta films with and without inserted Mo layers. In the absence of a Mo layer, the films show PMA at annealing temperatures below 300 °C. On the other hand, the insertion of a Mo layer preserves PMA at annealing temperatures of up to 500 °C; however, a higher annealing temperature leads to the collapse of PMA. X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) were used to study the microstructure of the films to understand the deterioration of PMA. The XPS results show that the segregation of Ta is partly suppressed by inserting a Mo layer. Once inserted, Mo does not remain at the interface of Ta and CoFeB but migrates to the surface of the films. The HRTEM results show that the crystallization of the MgO (001) texture is improved owing to the higher annealing temperature of the Mo inserted sample. A smooth and clear CoFeB/MgO interface is evident. The inserted Mo layer not only helps to obtain sharper and smoother interfaces but also contributes to the crystallization after the higher annealing temperature of films.

  9. Perpendicular magnetic recording—Its development and realization—

    PubMed Central

    IWASAKI, Shun-ichi

    2009-01-01

    The principle of conventional magnetic recording is that magnetic fields are applied parallel to the plane of the magnetic medium. As described in this paper, the invention and development of a new method of placing the magnetized information perpendicular to the plane of the magnetic recording medium is presented. The yield in the mass production of high-density hard disk drives (HDDs) for perpendicular recording is much higher than that of HDDs for conventional recording. Consequently, it is estimated that as many as 75% of the 500 million HDDs to be shipped this year will use this technology. PMID:19212097

  10. Topological defects and misfit strain in magnetic stripe domains of lateral multilayers with perpendicular magnetic anisotropy.

    PubMed

    Hierro-Rodriguez, A; Cid, R; Vélez, M; Rodriguez-Rodriguez, G; Martín, J I; Álvarez-Prado, L M; Alameda, J M

    2012-09-14

    Stripe domains are studied in perpendicular magnetic anisotropy films nanostructured with a periodic thickness modulation that induces the lateral modulation of both stripe periods and in-plane magnetization. The resulting system is the 2D equivalent of a strained superlattice with properties controlled by interfacial misfit strain within the magnetic stripe structure and shape anisotropy. This allows us to observe, experimentally for the first time, the continuous structural transformation of a grain boundary in this 2D magnetic crystal in the whole angular range. The magnetization reversal process can be tailored through the effect of misfit strain due to the coupling between disclinations in the magnetic stripe pattern and domain walls in the in-plane magnetization configuration.

  11. Reduction of track width in perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Xia, W.; Yamada, T.; Aoi, H.; Muraoka, H.; Nakamura, Y.

    2005-02-01

    In order to three dimensionally analyze perpendicular magnetic recording mechanisms, we have developed a program in which the magnetization of magnetic particles is introduced into calculations of magnetization distributions in a recording layer, based on the commercial software JMAG-Studio. Because this program was based on a FEM calculation, the head and media interactions and demagnetization during the recording process can be accurately modeled. Using this program, methods to reduce the recorded track width in perpendicular magnetic recording were investigated. Decreasing the magnetic spacing, the use of a side-shielded head structure and using media with weak exchange coupling are effective ways to reduce the track width in a single pole head and double-layer perpendicular media recording system.

  12. Perpendicularly magnetized exchange-biased magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Ney, Andreas; van Dijken, Sebastiaan; Parkin, Stuart

    2005-03-01

    Exchange biased magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) have been studied. The ferromagnetic electrodes were fabricated from either Co/Pt or Co/Pd multilayers and the tunnel barriers were formed from Al2O3. In some cases one of the electrodes was exchange biased with either PtMn or IrMn. We discuss the dependence of the PMA and the exchange bias on the thickness of the Co, Pt and Pd layers. The properties of the MTJs are strongly influenced by the structural morphology of the Co/Pt and the Co/Pd multilayer electrodes, which appear to give rise to rough tunnel barriers with low resistance.

  13. Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces

    NASA Astrophysics Data System (ADS)

    Lakshmanan, Saravanan; Rao, Subha Krishna; Muthuvel, Manivel Raja; Chandrasekaran, Gopalakrishnan; Therese, Helen Annal

    2017-08-01

    Magnetization of Ta/CoFeB/Ta trilayer films with thick layer of CoFeB deposited under different substrate temperatures (Ts) via ultra-high vacuum DC sputtering technique has been measured with the applied magnetic field parallel and perpendicular to the plane of the film respectively to study the perpendicular coercive forces of the film. The samples were further analyzed for its structural, topological, morphological, and electrical transport properties. The core chemical states for the elements present in the CoFeB thin film were analyzed by XPS studies. Magnetization studies reveal the existence of perpendicular coercive forces in CoFeB films deposited only at certain temperatures such as RT, 450 °C, 475 °C and 500 °C. CoFeB film deposited at 475 °C exhibited a maximum coercivity of 315 Oe and a very low saturation magnetization (Ms) of 169 emu/cc in perpendicular direction. This pronounced effect in perpendicular coercive forces observed for CoFeB475 could be attributed to the effect of temperature in enhancing the crystallization of the film at the Ta/CoFeB interfaces. However at temperatures higher than 475 °C the destruction of the Ta/CoFeB interface due to intermixing of Ta and CoFeB results in the disappearance of magnetic anisotropy.

  14. Extraordinarily large perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite Co{sub x}Fe{sub 3−x}O{sub 4}(001) (x = 0.75, 1.0) thin films

    SciTech Connect

    Niizeki, Tomohiko; Utsumi, Yuji; Aoyama, Ryohei; Yanagihara, Hideto; Inoue, Jun-ichiro; Kita, Eiji; Yamasaki, Yuichi; Nakao, Hironori; Koike, Kazuyuki

    2013-10-14

    Perpendicular magnetic anisotropy (PMA) of cobalt-ferrite Co{sub x}Fe{sub 3-x}O{sub 4} (x = 0.75 and 1.0) epitaxial thin films grown on MgO (001) by a reactive magnetron sputtering technique was investigated. The saturation magnetization was found to be 430 emu/cm{sup 3} for x = 0.75, which is comparable to that of bulk CoFe{sub 2}O{sub 4} (425 emu/cm{sup 3}). Torque measurements afforded PMA constants of K{sub u}{sup eff}=9.0 Merg/cm{sup 3} (K{sub u}=10.0 Merg/cm{sup 3}) and K{sub u}{sup eff}=9.7 Merg/cm{sup 3} for x = 0.75 and 1.0, respectively. The value of K{sub u}{sup eff} extrapolated using Miyajima's plot was as high as 14.7 Merg/cm{sup 3} for x = 1.0. The in-plane four-fold magnetic anisotropy was evaluated to be 1.6 Merg/cm{sup 3} for x = 0.75. X-ray diffraction measurement revealed our films to be pseudomorphically strained on MgO (001) with a Poisson ratio of 0.4, leading to a considerable in-plane tensile strain by which the extraordinarily large PMA could be accounted for.

  15. Perpendicular magnetic anisotropy in composite MgO/CoFeB/Ta/[Co/Pd]n structures

    NASA Astrophysics Data System (ADS)

    Garcia-Vazquez, Valentin; Chang, Yao-Jen; Canizo-Cabrera, A.; Garzon-Roman, Abel; Wu, Te-ho

    2016-02-01

    The impact of a non-magnetic Ta spacer layer on the perpendicular magnetic anisotropy (PMA) of composite magnetic structures constituted by ultra-thin Co/Pd multilayers (MLs) and MgO/CoFeB was studied. Composite structures lacking a Ta layer present in-plane magnetic anisotropy. The strong perpendicular anisotropy observed in sole Co/Pd MLs is not sufficient to pull the magnetic moment out of the film plane, not even after annealing at 300 or 350 °C. PMA with squareness values close to unity and annealing stability up to 350 °C is observed after the insertion of an ultra-thin Ta layer. Our study demonstrates that Ta layer is essential for obtaining perpendicular magnetic axis in MgO/CoFeB/Ta/[Co/Pd]6. The exchange coupling between the MgO/CoFeB bilayer and the Co/Pd MLs is ferromagnetic with sharp switching characteristics. Perpendicular composite structures with sharp magnetization reversal and annealing stability are relevant in perpendicular CoFeB-based magnetic tunnel junctions for the development of gigabit-scale nonvolatile memory.

  16. All Spin Orbit Switching of Perpendicular Magnetization

    DTIC Science & Technology

    2016-10-04

    bits, fast and energy efficient writing of magnetic bits remains a challenge. Current-induced spin-orbit torques (SOTs) have been widely considered due...to significant potential for fast and energy-efficient writing of magnetic bits. However, to deterministically switch the magnetization of a

  17. Tetragonal Heusler-Like Mn-Ga Alloys Based Perpendicular Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Ma, Qinli; Sugihara, Atsushi; Suzuki, Kazuya; Zhang, Xianmin; Miyazaki, Terunobu; Mizukami, Shigemi

    2014-10-01

    Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

  18. Accurate calculation of the transverse anisotropy of a magnetic domain wall in perpendicularly magnetized multilayers

    NASA Astrophysics Data System (ADS)

    Büttner, Felix; Krüger, Benjamin; Eisebitt, Stefan; Kläui, Mathias

    2015-08-01

    Bloch domain walls are the most common type of transition between two out-of-plane magnetized domains (one magnetized upwards, one downwards) in films with perpendicular magnetic anisotropy. The rotation of the spins of such domain walls in the plane of the film requires energy, which is described by an effective anisotropy, the so-called transverse or hard axis anisotropy K⊥. This anisotropy and the related Döring mass density of the domain wall are key parameters of the one-dimensional model to describe the motion of magnetic domain walls. In particular, the critical field strength or current density where oscillatory domain wall motion sets in (Walker breakdown) is directly proportional to K⊥. So far, no general framework is available to determine K⊥ from static characterizations such as magnetometry measurements. Here, we derive a universal analytical expression to calculate the transverse anisotropy constant for the important class of perpendicular magnetic multilayers. All the required input parameters of the model, such as the number of repeats, the thickness of a single magnetic layer, and the layer periodicity, as well as the effective perpendicular anisotropy, the saturation magnetization, and the static domain wall width are accessible by static sample characterizations. We apply our model to a widely used multilayer system and find that the effective transverse anisotropy constant is a factor of seven different from that when using the conventional approximations, showing the importance of using our analysis scheme. Our model is also applicable to domain walls in materials with Dzyaloshinskii-Moriya interaction (DMI). The accurate knowledge of K⊥ is needed to determine other unknown parameters from measurements, such as the DMI strength or the spin polarization of the spin current in current-induced domain wall motion experiments.

  19. Copper dusting effects on perpendicular magnetic anisotropy in Pt/Co/Pt tri-layers

    NASA Astrophysics Data System (ADS)

    Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S.

    2016-05-01

    The effect of Cu dusting on perpendicular magnetic anisotropy of sputter grown Pt/Co/Pt stack in which the Cu layer is in proximity with that of Co is investigated in this work. We used magneto optic Kerr effect microscopy measurements to study the variation in the reversal mechanisms in films with Co thicknesses below 0.8nm by systematically varying their perpendicular magnetic anisotropy using controlled Cu dusting. Cu dusting was done separately above and below the cobalt layer in order to understand the role of bottom and top Pt layers in magnetization reversal mechanisms of sputtered Pt/Co/Pt stack. The introduction of even 0.3nm thick Cu layer below the cobalt layer drastically affected the perpendicular magnetic anisotropy as evident from the nucleation behavior. On the contrary, even a 4nm thick top Cu layer had little effect on the reversal mechanism. These observations along with magnetization data was used to estimate the role of top and bottom Pt in the origin of perpendicular magnetic anisotropy as well as magnetization switching mechanism in Pt/Co/Pt thin films. Also, with an increase in the bottom Cu dusting from 0.2 to 0.4nm there was an increase in the number of nucleation sites resulting in the transformation of domain wall patterns from a smooth interface type to a finger like one and finally to maze type.

  20. Spin Hall Control of Magnetization in a Perpendicularly-Magnetized Magnetic Insulator

    NASA Astrophysics Data System (ADS)

    Pai, Chi-Feng; Quindeau, Andy; Tang, Astera; Onbasli, Mehmet; Mann, Maxwell; Caretta, Lucas; Ross, Caroline; Beach, Geoffrey

    Spin Hall effect (SHE)-induced spin-orbit torque (SOT) has been shown to be an efficient mechanism to control the magnetization in magnetic heterostructures. Although numerous works have demonstrated the efficacy of SOT in manipulating the magnetization of ferromagnetic metals (FM), SOT-controlled switching of ferromagnetic insulators (FMIs) has not yet been observed. In this work we show that spin Hall currents in Pt and Ta can generate SOTs strong enough to control the magnetization direction in an adjacent thulium iron garnet FMI film with perpendicular magnetic anisotropy. We find that dc current in the heavy metal (HM) generates an out-of-plane effective field in the FMI consistent with an antidamping torque whose magnitude is comparable to that observed in all-metallic systems. Spin Hall magnetoresistance (SMR) measurements reveal a large spin-mixing conductance, which implies considerable spin transparency at the metal/insulator interface and explains the observed strong current-induced torque. Our results show that charge currents flowing in a HM can be used to both control and detect the magnetization direction in a FMI electrically.

  1. Perpendicular magnetic tunnel junction with W seed and capping layers

    NASA Astrophysics Data System (ADS)

    Almasi, H.; Sun, C. L.; Li, X.; Newhouse-Illige, T.; Bi, C.; Price, K. C.; Nahar, S.; Grezes, C.; Hu, Q.; Khalili Amiri, P.; Wang, K. L.; Voyles, P. M.; Wang, W. G.

    2017-04-01

    We present a study on perpendicular magnetic tunnel junctions with W as buffer and capping layers. A tunneling magnetoresistance of 138% and an interfacial magnetic anisotropy of 1.67 erg/cm2 were obtained in optimally annealed samples. However, after extended annealing at 420 °C, junctions with W layers showed extremely small resistance due to interdiffusion of W into the MgO barrier. In contrast, in Ta-based junctions, the MgO barrier remained structurally stable despite disappearance of magnetoresistance after extended annealing due to loss of perpendicular magnetic anisotropy. Compared with conventional tunnel junctions with in-plane magnetic anisotropy, the evolution of tunneling conductance suggests that the relatively low magnetoresistance in perpendicular tunnel junctions is related to the lack of highly polarized Δ1 conducting channel developed in the initial stage of annealing.

  2. Magnetic hardening and domain structure in Co/Pt antidots with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Bran, C.; Gawronski, P.; Lucas, I.; del Real, R. P.; Strichovanec, P.; Asenjo, A.; Vazquez, M.; Chubykalo-Fesenko, O.

    2017-02-01

    (Co(0.4 nm)/Pt(0.7 nm)) x (x  =  10, 20, 30) multilayer antidot thin films (films with arrays of nanoholes) have been grown by dc sputtering onto self-assembled pores of anodic alumina membranes with a tailored diameter and a fixed inter-hole distance. The magnetic behavior has been quantified by vibrating sample magnetometry, and the surface magnetization patterns have been imaged by magnetic force microscopy. The magnetization reversal mechanism is characterized by two steps depending on the film thickness and antidot diameter. These steps are ascribed to the nucleation and demagnetization of magnetic stripe domains. Their presence confirms the perpendicular anisotropy of the multilayer antidot films. The coercivity of antidot thin film is larger than that of the continuous films due to additional pinning centers provided by antidots. The width of the stripe domains increases as a function of film thickness. The demagnetization is further investigated through micromagnetic simulations that are in agreement with the measured hysteresis loops and their features. Different reversal mechanisms and an increase of the domain width in antidot thin films are also confirmed as a function of the magnetic anisotropy, antidot diameter and thickness of the thin film. The presence of antidots with a designed geometry is revealed to be successful in tailoring the coercivity of the thin films and magnetic patterns, which is relevant for advances in nanoscale technologies.

  3. Fragmentation of Filamentary Molecular Clouds Threaded by Perpendicular Magnetic Field

    NASA Astrophysics Data System (ADS)

    Hanawa, Tomoyuki; Kudoh, Takahiro; Tomisaka, Kohji

    2017-01-01

    Filamentary clouds are ubiquitously seen in the star forming regions and the fragmentation of them are thought to result in star formation. Some of them are threaded by magnetic field parallel to the cloud axis and some others are thread by perpendicular ones. The effects of the parallel magnetic field on fragmentation have been studied well. However we know little about the effects of the perpendicular magnetic field on fragmentation. A strong perpendicular magnetic field is likely to suspend the fragmentation. In order to assess this effect, we have performed a linear stability analysis of an isothermal filamentary cloud while taking account of a uniform magnetic field perpendicular to the cloud axis. We have used the ideal MHD approximation in the stability analysis for simplicity. Then the analysis is formulated to be an eigenvalue problem in which each eigenmode has either a real frequency (stable) or a pure imaginary one (unstable). The growth rate of the instability as well as the eigenmode is obtained numerically as a function of the wavelength and magnetic field strength.The magnetic field suppresses gas motion perpendicular to it. Accordingly, the growth rate of an unstable eigenmode decreases monotonically as the magnetic field is strengthened. The wavelength of the most unstable mode is slightly increased by the magnetic field. When the plasma beta at the cloud center is slightly below 2, the fragmentation instability is completely suppressed. When the unstable mode is excited, only the magnetic field lines that thread the high region near the cloud axis move appreciably. We compare our analysis with those for magnetized sheet-like clouds.

  4. Variable variance Preisach model for multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Franco, A. F.; Gonzalez-Fuentes, C.; Morales, R.; Ross, C. A.; Dumas, R.; Åkerman, J.; Garcia, C.

    2016-08-01

    We present a variable variance Preisach model that fully accounts for the different magnetization processes of a multilayer structure with perpendicular magnetic anisotropy by adjusting the evolution of the interaction variance as the magnetization changes. We successfully compare in a quantitative manner the results obtained with this model to experimental hysteresis loops of several [CoFeB/Pd ] n multilayers. The effect of the number of repetitions and the thicknesses of the CoFeB and Pd layers on the magnetization reversal of the multilayer structure is studied, and it is found that many of the observed phenomena can be attributed to an increase of the magnetostatic interactions and subsequent decrease of the size of the magnetic domains. Increasing the CoFeB thickness leads to the disappearance of the perpendicular anisotropy, and such a minimum thickness of the Pd layer is necessary to achieve an out-of-plane magnetization.

  5. Lubricant Supply from Crystal Boundaries of Perpendicular Magnetic Disk Evaluated by Lateral Modulation Friction Force Microscopy

    NASA Astrophysics Data System (ADS)

    Miyake, Shojiro; Takahashi, Yuuzi; Wang, Mei; Saitoh, Tadashi; Matsunuma, Satoshi

    2004-11-01

    The tribological behavior of perfluoropolyether (PFPE) films attached to perpendicular recording magnetic disks coated with diamondlike carbon (DLC) was studied in lateral vibration wear tests using lateral modulus friction force microscopy (LM-FFM). The viscoelastic and frictional properties of these PFPE films without heat cure were improved due to the lubricant supply by tip sliding. However, the PFPE films were easily removed with increasing load and lateral vibration amplitude following heat treatment since the free lubricants on the films solidified resulting in the lost of fluidity.

  6. Strong perpendicular magnetic anisotropy in [Co/Pt] n ultrathin superlattices

    NASA Astrophysics Data System (ADS)

    Liu, Yi; Qiu, Jinjun; Ter Lim, Sze; Li Toh, Suey; Zhu, Zhengyong; Han, Guchang; Zhu, Kaigui

    2017-01-01

    Ultrathin [Co/Pt] n superlattice films consisting of 0.18-0.60-nm-thick Co and Pt sublayers were deposited by sputtering. A large in-plane saturation field (H s) of ˜39 kOe and a very large effective perpendicular magnetic anisotropy (K eff) with a magnitude of 107 erg/cm3 were attained. The highest K eff was ˜1.40 × 107 erg/cm3. These films are promising candidates for the reference layer of the p-MgO magnetic tunnel junction in Gb-scale magnetic random-access memory.

  7. Perpendicular magnetic anisotropy in Ta/Co2FeAl/MgO multilayers

    NASA Astrophysics Data System (ADS)

    Gabor, M. S.; Petrisor, T.; Tiusan, C.; Petrisor, T.

    2013-08-01

    In this paper, we demonstrate the stabilization of perpendicular magnetic anisotropy (PMA) in Ta/Co2FeAl/MgO multilayers sputtered on thermally oxidized Si(100) substrates. The magnetic analysis points out that these films show significant interfacial anisotropy even in the as-deposited state, KS=0.67 erg/cm2, enough to provide PMA for the as-deposited films with thicknesses below 1.5 nm. Moreover, the interfacial anisotropy is enhanced by thermal annealing up to 300 °C. The presence of a magnetic dead layer, whose thickness increases with annealing temperature, was also identified.

  8. CoCrPt antidot arrays with perpendicular magnetic anisotropy made on anodic alumina templates

    NASA Astrophysics Data System (ADS)

    Navas, D.; Ilievski, F.; Ross, C. A.

    2009-06-01

    Ti(5 nm)/CoCrPt(5-20 nm) bilayers with perpendicular magnetic anisotropy were deposited by rf sputtering onto porous alumina films to form antidot arrays with period 105 nm and pore diameters ranging from 18 to 56 nm. The coercivities of the antidot arrays are greater than those of unpatterned films and show only a weak dependence on antidot diameter. Magnetic force microscopy of ac-demagnetized samples shows that the antidot arrays have domain sizes larger than the 105 nm period. The magnetic behavior is discussed in terms of domain wall pinning by the antidots.

  9. Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

    2017-07-01

    We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

  10. Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector

    PubMed Central

    Lee, Dukhyung; Kim, Dai-Sik

    2016-01-01

    We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet’s principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet’s principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies. PMID:26740335

  11. Second order anisotropy contribution in perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Nguyen, H. T.; Dieny, B.

    2016-06-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form ‑K2cos4θ must be added to the conventional uniaxial –K1cos2θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated ‑K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from “easy-axis” to “easy-cone” regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface.

  12. Second order anisotropy contribution in perpendicular magnetic tunnel junctions

    PubMed Central

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Nguyen, H. T.; Dieny, B.

    2016-01-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form −K2cos4θ must be added to the conventional uniaxial –K1cos2θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated −K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from “easy-axis” to “easy-cone” regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface. PMID:27246631

  13. Second order anisotropy contribution in perpendicular magnetic tunnel junctions.

    PubMed

    Timopheev, A A; Sousa, R; Chshiev, M; Nguyen, H T; Dieny, B

    2016-06-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form -K2cos(4)θ must be added to the conventional uniaxial -K1cos(2)θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated -K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from "easy-axis" to "easy-cone" regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface.

  14. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  15. Perpendicularly magnetized spin filtering Cu/Ni multilayers

    SciTech Connect

    Shirahata, Yasuhiro; Wada, Eiji; Itoh, Mitsuru; Taniyama, Tomoyasu

    2014-01-20

    Spin filtering at perpendicular magnetized Cu/Ni multilayer/GaAs(001) interfaces is demonstrated at remanence using optical spin orientation method. [Cu(9 nm)/Ni(t{sub Ni} nm)]{sub n} multilayers are found to show a crossover from the in-plane to out-of-plane magnetic anisotropy at the Cu/Ni bilayer repetition n = 4 and the Ni layer thickness t{sub Ni} = 3. For a perpendicularly magnetized Cu/Ni multilayer/n-GaAs(001) interface, circular polarization dependent photocurrent shows a clear hysteretic behavior under optical spin orientation conditions as a function of magnetic field out-of-plane while the bias dependence exhibits a substantial peak at a forward bias, verifying that Cu/Ni multilayers work as an efficient spin filter in the remanent state.

  16. YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

    2017-06-01

    The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

  17. Surface magnetic canting of iron films

    NASA Astrophysics Data System (ADS)

    Kawauchi, Taizo; Fukutani, Katsuyuki; Matsumoto, Masuaki; Oda, Katsuro; Okano, Tatsuo; Zhang, Xiao Wei; Kishimoto, Shunji; Yoda, Yoshitaka

    2011-07-01

    The magnetization direction of α-Fe thin films was investigated by means of quantum-beat spectroscopy using nuclear resonant scattering in the glancing-incidence regime and conversion-electron Mössbauer spectroscopy (CEMS). The CEMS results show that the mean magnetization of the films is in plane. Quantum-beat data, on the other hand, reveal that perpendicular components are present in the magnetization at the film surfaces, indicating that the magnetization cants from the in-plane to the perpendicular direction near the surfaces.

  18. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Liu, T.; Zhang, Y.; Cai, J. W.; Pan, H. Y.

    2014-07-01

    The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accelerated the development of next generation high-density non-volatile memories by utilizing perpendicular magnetic tunnel junctions (p-MTJs). However, the insufficient interfacial PMA in the typical Ta/CoFeB/MgO system will not only complicate the p-MTJ optimization, but also limit the device density scalability. Moreover, the rapid decreases of PMA in Ta/CoFeB/MgO films with annealing temperature higher than 300°C will make the compatibility with CMOS integrated circuits a big problem. By replacing the Ta buffer layer with a thin Mo film, we have increased the PMA in the Ta/CoFeB/MgO structure by 20%. More importantly, the thermal stability of the perpendicularly magnetized (001)CoFeB/MgO films is greatly increased from 300°C to 425°C, making the Mo/CoFeB/MgO films attractive for a practical p-MTJ application.

  19. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy

    PubMed Central

    Liu, T.; Zhang, Y.; Cai, J. W.; Pan, H. Y.

    2014-01-01

    The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accelerated the development of next generation high-density non-volatile memories by utilizing perpendicular magnetic tunnel junctions (p-MTJs). However, the insufficient interfacial PMA in the typical Ta/CoFeB/MgO system will not only complicate the p-MTJ optimization, but also limit the device density scalability. Moreover, the rapid decreases of PMA in Ta/CoFeB/MgO films with annealing temperature higher than 300°C will make the compatibility with CMOS integrated circuits a big problem. By replacing the Ta buffer layer with a thin Mo film, we have increased the PMA in the Ta/CoFeB/MgO structure by 20%. More importantly, the thermal stability of the perpendicularly magnetized (001)CoFeB/MgO films is greatly increased from 300°C to 425°C, making the Mo/CoFeB/MgO films attractive for a practical p-MTJ application. PMID:25081387

  20. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy.

    PubMed

    Liu, T; Zhang, Y; Cai, J W; Pan, H Y

    2014-07-31

    The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accelerated the development of next generation high-density non-volatile memories by utilizing perpendicular magnetic tunnel junctions (p-MTJs). However, the insufficient interfacial PMA in the typical Ta/CoFeB/MgO system will not only complicate the p-MTJ optimization, but also limit the device density scalability. Moreover, the rapid decreases of PMA in Ta/CoFeB/MgO films with annealing temperature higher than 300°C will make the compatibility with CMOS integrated circuits a big problem. By replacing the Ta buffer layer with a thin Mo film, we have increased the PMA in the Ta/CoFeB/MgO structure by 20%. More importantly, the thermal stability of the perpendicularly magnetized (001)CoFeB/MgO films is greatly increased from 300°C to 425°C, making the Mo/CoFeB/MgO films attractive for a practical p-MTJ application.

  1. Ferromagnetic resonance of exchange-coupled perpendicularly magnetized bilayers

    SciTech Connect

    Devolder, Thibaut

    2016-04-21

    Strong ferromagnetic interlayer exchange couplings J in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination of broadband ferromagnetic resonance methods and magnetometry hysteresis loops. For this, we model the switching and the eigenexcitations in bilayer systems comprising a soft layer coupled to a thicker harder layer that possesses higher perpendicular magnetic anisotropy. For large J > 0, the switching fields are essentially independent of J but the frequency of the optical eigenmode of the bilayer and the linewidth of the acoustical and optical eigenmode are directly sensitive to the coupling. We derive a corpus of compact analytical expressions to analyze these frequencies, their linewidth and discuss the meaning thereof. We illustrate this corpus on a system mimicking the fixed layers of a magnetic tunnel junction meant for spin torque applications.

  2. Ferromagnetic resonance of exchange-coupled perpendicularly magnetized bilayers

    NASA Astrophysics Data System (ADS)

    Devolder, Thibaut

    2016-04-01

    Strong ferromagnetic interlayer exchange couplings J in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination of broadband ferromagnetic resonance methods and magnetometry hysteresis loops. For this, we model the switching and the eigenexcitations in bilayer systems comprising a soft layer coupled to a thicker harder layer that possesses higher perpendicular magnetic anisotropy. For large J > 0, the switching fields are essentially independent of J but the frequency of the optical eigenmode of the bilayer and the linewidth of the acoustical and optical eigenmode are directly sensitive to the coupling. We derive a corpus of compact analytical expressions to analyze these frequencies, their linewidth and discuss the meaning thereof. We illustrate this corpus on a system mimicking the fixed layers of a magnetic tunnel junction meant for spin torque applications.

  3. Depth-resolved magnetization reversal in nanoporous perpendicular anisotropy multilayers

    NASA Astrophysics Data System (ADS)

    Kirby, B. J.; Rahman, M. T.; Dumas, R. K.; Davies, J. E.; Lai, C. H.; Liu, Kai

    2013-01-01

    We have used polarized neutron reflectometry to study the field-dependent magnetizations of Co/Pt mulitlayers patterned via deposition onto nanoporous alumina hosts with varying pore aspect ratio. Despite the porosity and lack of long-range order, robust spin-dependent reflectivities are observed, allowing us to distinguish the magnetization of the surface multilayer from that of material in the pores. We find that as the pores become wider and shallower, the surface Co/Pt multilayers have progressively smaller high field magnetization and exhibit softer magnetic reversal—consistent with increased magnetic disorder and a reduction of the perpendicular anisotropy near the pore rims. These results reveal complexities of magnetic order in nanoporous heterostructures, and help pave the way for depth-resolved studies of complex magnetic heterostructures grown on prepatterned substrates.

  4. Current driven domain wall motion in rare-earth transition metal alloys with perpendicular magnetic anisotropy.

    PubMed

    Li, Songtian; Liu, Xiaoxi; Morisako, Akimistu

    2012-09-01

    The domain wall movement behaviors under current combining with magnetic field in perpendicularly magnetized TbFeCo wire were studied by a polar magneto-optical Kerr effect microscope. The velocity for domain wall creeping along electrons flowing direction was found to be apparently higher than that of domain wall creeping against electrons flowing, which is the signature of the spin transfer torque effect. By employing the modified field-driven creep motion law, a spin transfer efficiency of 2.7 Oe cm2/10(6) A was determined for TbFeCo wire by treating the spin transfer torque as an effective field adding to the external field. The high spin transfer efficiency suggests that perpendicularly magnetized system with sharp domain walls in TbFeCo film shows high superiorities for applications in spin transfer torque based devices compared with in-plane magnetized systems.

  5. A large-area mesoporous array of magnetic nanostructure with perpendicular anisotropy integrated on Si wafers

    NASA Astrophysics Data System (ADS)

    Tofizur Rahman, M.; Shams, Nazmun N.; Lai, Chih-Huang

    2008-08-01

    Large-area, over several square centimeters, mesoporous array of magnetic nanostructure with perpendicular anisotropy is prepared by depositing Co/Pt multilayers (MLs) on a mesopore array of anodized alumina (AAO) fabricated on Si wafers. The MLs are mainly deposited on the top of AAO walls and perimeters of the pores; very small amounts of magnetic material reach the bottom due to the high aspect ratio of AAO. Consequently, ordered pores are present in the magnetic MLs. The mean pore diameter of the fabricated mesoporous array is 8.83 nm with a standard deviation of 3.16 nm and density of about 2.1 × 1011 cm-2. The Co/Pt MLs deposited on AAO and Si both exhibit strong perpendicular magnetic anisotropy, but the perpendicular coercivity (Hc) increases by 15 times on AAO compared to that on Si. On the other hand, the magnetic cluster size decreases from 1000 nm (on Si) to 100 nm due to the presence of high-density pores. The dramatic increase in Hc and the decrease in magnetic cluster size suggest that the pores behave as effective pinning sites. The magnetization-switching characteristics of the fabricated porous structure are different from those of the continuous films or Stoner Wohlfarth-type (S W) particles. One of the potential applications of this mesoporous structure may be in the field of high-density magnetic data storage.

  6. A large-area mesoporous array of magnetic nanostructure with perpendicular anisotropy integrated on Si wafers.

    PubMed

    Rahman, M Tofizur; Shams, Nazmun N; Lai, Chih-Huang

    2008-08-13

    Large-area, over several square centimeters, mesoporous array of magnetic nanostructure with perpendicular anisotropy is prepared by depositing Co/Pt multilayers (MLs) on a mesopore array of anodized alumina (AAO) fabricated on Si wafers. The MLs are mainly deposited on the top of AAO walls and perimeters of the pores; very small amounts of magnetic material reach the bottom due to the high aspect ratio of AAO. Consequently, ordered pores are present in the magnetic MLs. The mean pore diameter of the fabricated mesoporous array is 8.83 nm with a standard deviation of 3.16 nm and density of about 2.1 × 10(11) cm(-2). The Co/Pt MLs deposited on AAO and Si both exhibit strong perpendicular magnetic anisotropy, but the perpendicular coercivity (H(c)) increases by 15 times on AAO compared to that on Si. On the other hand, the magnetic cluster size decreases from 1000 nm (on Si) to 100 nm due to the presence of high-density pores. The dramatic increase in H(c) and the decrease in magnetic cluster size suggest that the pores behave as effective pinning sites. The magnetization-switching characteristics of the fabricated porous structure are different from those of the continuous films or Stoner-Wohlfarth-type (S-W) particles. One of the potential applications of this mesoporous structure may be in the field of high-density magnetic data storage.

  7. Dirac oscillator in perpendicular magnetic and transverse electric fields

    SciTech Connect

    Nath, D.; Roy, P.

    2014-12-15

    We study (2+1) dimensional massless Dirac oscillator in the presence of perpendicular magnetic and transverse electric fields. Exact solutions are obtained and it is shown that there exists a critical magnetic field B{sub c} such that the spectrum is different in the two regions B>B{sub c} and Bmagnetic as well as electric field. • Exact solutions are found. • Critical cases have been examined.

  8. Perpendicularly Aligned, Anion Conducting Nanochannels in Block Copolymer Electrolyte Films

    SciTech Connect

    Arges, Christopher G.; Kambe, Yu; Suh, Hyo Seon; Ocola, Leonidas E.; Nealey, Paul F.

    2016-03-08

    Connecting structure and morphology to bulk transport properties, such as ionic conductivity, in nanostructured polymer electrolyte materials is a difficult proposition because of the challenge to precisely and accurately control order and the orientation of the ionic domains in such polymeric films. In this work, poly(styrene-block-2-vinylpyridine) (PSbP2VP) block copolymers were assembled perpendicularly to a substrate surface over large areas through chemical surface modification at the substrate and utilizing a versatile solvent vapor annealing (SVA) technique. After block copolymer assembly, a novel chemical vapor infiltration reaction (CVIR) technique selectively converted the 2-vinylpyridine block to 2-vinyl n-methylpyridinium (NMP+ X-) groups, which are anion charge carriers. The prepared block copolymer electrolytes maintained their orientation and ordered nanostructure upon the selective introduction of ion moieties into the P2VP block and post ion-exchange to other counterion forms (X- = chloride, hydroxide, etc.). The prepared block copolymer electrolyte films demonstrated high chloride ion conductivities, 45 mS cm(-1) at 20 degrees C in deionized water, the highest chloride ion conductivity for anion conducting polymer electrolyte films. Additionally, straight-line lamellae of block copolymer electrolytes were realized using chemoepitaxy and density multiplication. The devised scheme allowed for precise and accurate control of orientation of ionic domains in nanostructured polymer electrolyte films and enables a platform for future studies that examines the relationship between polymer electrolyte structure and ion transport.

  9. Giant perpendicular magnetocrystalline anisotropy of 3d transition-metal thin films on MgO

    SciTech Connect

    Nakamura, Kohji Ikeura, Yushi; Akiyama, Toru; Ito, Tomonori

    2015-05-07

    Magnetocrystalline anisotropy (MCA) of the Fe-based transition-metal thin films was investigated by means of first principles full-potential linearized augmented plane wave method. A giant perpendicular MCA (PMCA), up to 3 meV, was confirmed in a 7-layer Fe-Ni film/MgO(001), where an Fe{sub 2}/Ni/Fe/Ni/Fe{sub 2} atomic-layer alignment with a bcc-like-layer stacking and the Fe/MgO interfaces play key roles for leading to the large PMCA. Importantly, we find that the PMCA overcomes enough over the magnetic dipole-dipole anisotropy that favors the in-plane magnetization even when the film thickness increases.

  10. Effect of annealing on the magnetic tunnel junction with Co/Pt perpendicular anisotropy ferromagnetic multilayers

    NASA Astrophysics Data System (ADS)

    Wang, Yi.; Wang, W. X.; Wei, H. X.; Zhang, B. S.; Zhan, W. S.; Han, X. F.

    2010-05-01

    Perpendicular magnetic tunnel junctions (pMTJs) with tunneling magnetoresistance (TMR) as high as 14.7% at room temperature were fabricated. The continuous film and pMTJs with Co/Pt multilayer magnetic electrodes and AlOx tunnel barrier were annealed at different temperatures and the effect of annealing on their properties was investigated. The hysteresis loops and X-ray reflectivity measurement show that the interdiffusion of Co and Pt atoms is slight when annealed below 523 K. However, the patterned magnetic tunnel junction gets TMR ratio from 12.3% to the maximum value of 14.7% after annealing at 483 K for 1 h.

  11. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    SciTech Connect

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Wang, Jian; Szivos, Janos; Safran, Gyorgy

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  12. Perpendicular magnetic anisotropy in Co-Pt granular multilayers

    NASA Astrophysics Data System (ADS)

    Bartolomé, J.; Figueroa, A. I.; García, L. M.; Bartolomé, F.; Ruiz, L.; González-Calbet, J. M.; Petroff, F.; Deranlot, C.; Wilhelm, F.; Rogalev, A.; Brookes, N.

    2012-09-01

    Magnetization hysteresis curves have been measured on Co granular multilayers, (Al2O3/Co/Pt)N (N = 1 and 25), with the applied magnetic field parallel and perpendicular to the substrate plane. In all samples perpendicular magnetic anisotropy was observed. For Co particles with average diameter 3 nm, the coercive field at low temperature is μ0HC = 0.5 T. HC decreases for increasing temperature and disappears at ≈200 K. A soft magnetic component is also present in all samples up to the freezing temperature Tf = 365 K. Co and Pt XMCD measurements at the L2,3 edges were performed, yielding to the orbital mL and spin mS contributions to the total magnetic moment of the system. These results, in addition to XANES ones, indicate the presence of CoxPt1-x alloy. Particles conformed of CoPt alloy, embedded in Pt and coupled magnetically by dipolar or RKKY interaction, may explain the phenomenology observed in these systems.

  13. Antiferromagnet-induced perpendicular magnetic anisotropy in ferromagnetic/antiferromagnetic/ferromagnetic trilayers

    NASA Astrophysics Data System (ADS)

    Wang, Bo-Yao; Lin, Po-Han; Tsai, Ming-Shian; Shih, Chun-Wei; Lee, Meng-Ju; Huang, Chun-Wei; Jih, Nae-Yeou; Wei, Der-Hsin

    2016-08-01

    This study demonstrates the effect of antiferromagnet-induced perpendicular magnetic anisotropy (PMA) on ferromagnetic/antiferromagnetic/ferromagnetic (FM/AFM/FM) trilayers and reveals its interplay with a long-range interlayer coupling between separated FM layers. In epitaxially grown 12 monolayer (ML) Ni/Co/Mn/5 ML Co/Cu(001) films, magnetic hysteresis loops and element-resolved magnetic domain imaging showed that the magnetization direction of the top layers of 12 ML Ni/Co films could be changed from the in-plane direction to the perpendicular direction, when the thickness of the Mn films (tMn) was greater than a critical value close to the thickness threshold associated with the onset of AFM ordering (tMn=3.5 ML). The top FM layers exhibited a significantly enhanced PMA when tMn increased further, and this enhancement can be attributed to a strengthened AFM ordering of the volume moments of the Mn films, as evidenced by the presence of induced domain frustration. By contrast, the long-range interlayer coupling presented clear effects only when tMn was at a lower coverage.

  14. Domain wall resistance in perpendicularly magnetized (Ga,Mn)As

    NASA Astrophysics Data System (ADS)

    Chiba, D.; Yamanouchi, M.; Matsukura, F.; Dietl, T.; Ohno, H.

    2007-03-01

    Domain wall (DW) resistance in perpendicularly magnetized (Ga,Mn)As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance.

  15. Dynamical mechanism for coercivity tunability in the electrically controlled FePt perpendicular films with small grain size

    SciTech Connect

    Feng, Chun Li, Xujing; Jiang, Yong; Yu, Guanghua; Yang, Meiyin; Gong, Kui; Li, Baohe

    2014-01-14

    This article reports property manipulations and related dynamical evolution in electromigration controlled FePt perpendicular films. Through altering voltage and treatment time of the power supply applied on the films, electronic momentum was fleetly controlled to manipulate the kinetic energy of Fe and Pt atoms based on momentum exchanges. The electromigration control behavior was proven to cause steerable ordering degree and grain growth in the films without thermal treatment. Processed FePt films with small grain size, high magnetocrystalline anisotropy, and controllable coercivity can be easily obtained. The results provide a novel method for tuning magnetic properties of other L1{sub 0} structured films.

  16. Perpendicular magnetic tunnel junctions with synthetic antiferromagnetic pinned layers based on [Co/Pd] multilayers

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Jen; Canizo-Cabrera, A.; Garcia-Vazquez, Valentin; Chang, Yang-Hua; Wu, Te-ho

    2013-05-01

    We fabricated MgO-based perpendicular magnetic tunnel junctions (p-MTJ) with Ta/CoFeB magnetic electrodes. Synthetic antiferromagnetic (SAF) pinned layers with perpendicular magnetic anisotropy (PMA) were included into the p-MTJs by using two Co/Pd multilayers (MLs) separated by a thin Ru spacer layer. The MTJs stack has the structure bottom contact/free layer CoFeB (1.0)/MgO (1)/pinned layer CoFeB (1.0)/Ta spacer layer/SAF/Ru cap layer/top contact (the units in parenthesis are in nanometers). The SAF was optimized by changing the repetition period n in one of the Co/Pd multilayers and the Ru thickness in order to obtain PMA with antiferromagnetic (AFM) coupling. The Ru spacer values were 0.7, 0.75, 0.8, 0.85, and 0.9 nm. The magnetic studies show that all magnetic films, including the Ta/CoFeB layers, are perpendicularly magnetized. The two Co/Pd MLs are AFM coupled for n > 2. Controlling the Ru thickness, the interlayer exchange coupling strength Jiec can be tailored. Jiec vs. Ru thickness exhibits a simple exponential decay. The electrical properties of the full p-MTJ with SAF show a low resistance-area (RA) product of 44.7 Ω μm2 and a tunnel magnetoresistance (TMR) ratio of 10.2%.

  17. Perpendicular Magnetic Anisotropy in FePt Patterned Media Employing a CrV Seed Layer.

    PubMed

    Kim, Hyunsu; Noh, Jin-Seo; Roh, Jong Wook; Chun, Dong Won; Kim, Sungman; Jung, Sang Hyun; Kang, Ho Kwan; Jeong, Won Yong; Lee, Wooyoung

    2011-12-01

    A thin FePt film was deposited onto a CrV seed layer at 400°C and showed a high coercivity (~3,400 Oe) and high magnetization (900-1,000 emu/cm(3)) characteristic of L 10 phase. However, the magnetic properties of patterned media fabricated from the film stack were degraded due to the Ar-ion bombardment. We employed a deposition-last process, in which FePt film deposited at room temperature underwent lift-off and post-annealing processes, to avoid the exposure of FePt to Ar plasma. A patterned medium with 100-nm nano-columns showed an out-of-plane coercivity fivefold larger than its in-plane counterpart and a remanent magnetization comparable to saturation magnetization in the out-of-plane direction, indicating a high perpendicular anisotropy. These results demonstrate the high perpendicular anisotropy in FePt patterned media using a Cr-based compound seed layer for the first time and suggest that ultra-high-density magnetic recording media can be achieved using this optimized top-down approach.

  18. Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Ducruet, Clarisse; Dieny, Bernard

    2013-07-01

    Ultrathin Ta layers were inserted in the bottom hard (Co/Pt)/Ta/CoFeB/MgO magnetic electrode of perpendicular magnetic tunnel junctions. The magnetization of the top part of this electrode abruptly falls in-plane when the Ta thickness exceeds 0.45 nm. This results from the balance between the various energy terms acting on this layer (exchange-like coupling through Ta, demagnetizing energy, and perpendicular anisotropy at the CoFeB/MgO interface). For small Ta thicknesses, this insertion leads to a strong improvement of the tunnel magnetoresistance, as long as the magnetization of all layers remains perpendicular-to-plane.

  19. Magnetic switching probability of perpendicularly magnetized nano-dot

    NASA Astrophysics Data System (ADS)

    Wibowo, N. A.; Trihandaru, S.

    2016-11-01

    Understanding of magnetization reversal mode plays an important role in spintronic devices performance. Especially in Heat Assisted Magnetic Recording, the contribution of thermal field in the magnetization dynamics becomes a crucial aspect which should be further explored. In this paper, Landau Lifshift-Gilbert equation was employed to investigate the magnetic switching dynamics for nano-dots with different magnetic anisotropies. This micromagnetic study shows that these nano-dots exhibit the different mode of switching. Multi-domain configuration dictates the switching process for nano-dot with strong magnetic anisotropy before magnetized in the driven magnetic field direction. Meanwhile, multi-domain configuration, domain-wall nucleation, and propagation take place in the process to achieve magnetized single-domain for the nano-dot with the lower level of magnetic anisotropy. Furthermore, in the absence of the external magnetic field, magnetic moments of this low magnetic anisotropies nano-dot is more probably to reverse.

  20. The study of perpendicular magnetic anisotropy in the magnetic sensors with linear sensitivity using polarized neutron reflectometry

    NASA Astrophysics Data System (ADS)

    Zhu, T.

    2016-04-01

    The CoFeB sandwiched by Ta and MgO layers enables a perpendicular magnetic anisotropy (PMA) and provides a pathway for such application. In this paper, we reported the origin of PMA in CoFeB using the anomalous Hall effect (AHE) and polarized neutron reflectometry (PNR). From PNR experiments, we obtained the details of the magnetic and structural depth profiles inside the film. It is found that the PMA properties of CoFeB layers deposited above and under MgO layer are different and PNR measurements confirmed that a large PMA in the CoFeB above MgO layer is related to its low magnetization. Based on this PMA mechanism, we obtain a high sensitivity of AHE in the perpendicular CoFeB, which opens a new avenue to detect ultralow magnetic field.

  1. Perpendicular propagation of electromagnetic solitons in magnetized thermal pair plasmas

    NASA Astrophysics Data System (ADS)

    Verheest, Frank

    2016-02-01

    The properties of perpendicularly propagating large amplitude electromagnetic solitons are investigated in a thermal, magnetized pair plasma. To obtain a tractable description, these solitons are assumed to be charge neutral and have a linearly polarized magnetic field, and thus represent the nonlinear extension of part of the linear extraordinary mode. From a Sagdeev pseudopotential analysis it transpires that these solitons are compressive and characterized by a wave magnetic field parallel to the static field. The existence domain in compositional parameter space shows pressure-dependent maxima for the soliton velocities, densities and total magnetic field. Physically, an increase in pressure yields a decrease in the acceptable maxima. This is also illustrated on typical pseudopotential and soliton profiles.

  2. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Tryputen, Larysa; Tu, Kun-Hua; Piotrowski, Stephan K.; Bapna, Mukund; Majetich, Sara A.; Sun, Congli; Voyles, Paul M.; Almasi, Hamid; Wang, Weigang; Vargas, Patricio; Tresback, Jason S.; Ross, Caroline A.

    2016-05-01

    Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both ‘up’ or both ‘down’ following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

  3. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions.

    PubMed

    Tryputen, Larysa; Tu, Kun-Hua; Piotrowski, Stephan K; Bapna, Mukund; Majetich, Sara A; Sun, Congli; Voyles, Paul M; Almasi, Hamid; Wang, Weigang; Vargas, Patricio; Tresback, Jason S; Ross, Caroline A

    2016-05-06

    Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

  4. Ferromagnetic resonance study of ion irradiated Co/Ni multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Beaujour, J.-M.; Kent, A.; Ravelosona, D.; Fullerton, E.; Samson, Y.; Beigne, C.

    2009-03-01

    Ferromagnetic resonance (FMR) spectroscopy was used to investigate the effect of helium ion-irradiation on the magnetic properties and the magnetization dynamics of Co/Ni multilayer films. The anisotropy in these materials is associated with interfaces, which can be systematically disordered with light ion-irradiation without inducing major structural changes to the films. [Pd/Co]x2|[8åNi/1.4åCo]x3 |Pd|Co|Pd| have been exposed to He^+ irradiation with fluence up to 10^15 ions/cm^2 [1]. FMR was conducted with a broad band coplanar waveguide up to 30 GHz. The resonance field and the FMR linewidth were determined as a function of frequency for dc magnetic fields in-plane, out-of-plane and for selected field angles. The perpendicular anisotropy decreases linearly with fluence, and at a particular fluence the direction of easy magnetization switches from perpendicular to in-plane. The Gilbert damping constant of the films irradiated at the higher and lower fluence is about the same: 0.03<=α<=0.04. However, the linewidth exhibits a non-monotonic dependence on fluence, with a maximum at intermediate fluence. We will discuss this effect as well as possible explanations in terms of the changes in interface structure as a function of fluence. [1] Stanescu et al., J. Appl. Phys. (2008).

  5. Magnetic tunnel junctions using Co/Pt multilayered free layers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Machida, K.; Furukawa, K.; Nakayama, T.; Funabashi, N.; Aoshima, K.; Kuga, K.; Kikuchi, H.; Ishibashi, T.; Shimidzu, N.

    2011-07-01

    Co/Pt multilayered films with perpendicular magnetic anisotropy have a large magneto-optical Kerr effect. To use the films with a submicron magneto-optical light modulator driven by spin transfer switching, we fabricated two types of magnetic tunnel junctions (MTJs) with Co/Pt multilayered films for the free layers. One is an fcc-based MTJ, another is a bcc-based MTJ with CoFeB/MgO/CoFeB junction. The fcc-based MTJ with a Ag buffer layer on the bottom electrode showed a large coercive force of the pinned layer, a large Kerr rotation angle of 0.3 degree in the free layer and a tunnel magnetoresistance (TMR) ratio of 3.8%. In the CoFeB/MgO/CoFeB junction, an X-ray diffraction pattern of an MgO layer showed a large MgO(002)-orientation. However, the TMR ratio was less than 3 %. An MTJ with a Ta buffer layer between the CoFeB layer and the Co/Pt multilayered films in the free layer was prepared. The Ta buffer was used to alleviate a lattice mismatch between bcc-CoFeB/MgO/CoFeB and fcc-Co/Pt multilayer. The peak intensity of the MgO(002)-orientation was increased up to 2 times. This result suggests that the crystalline texture of the bcc-CoFeB/MgO/CoFeB junction is strongly influenced by the fcc-Co/Pt multilayered films.

  6. Enhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer

    NASA Astrophysics Data System (ADS)

    Kubota, Hitoshi; Ishibashi, Shota; Saruya, Takeshi; Nozaki, Takayuki; Fukushima, Akio; Yakushiji, Kay; Ando, Koji; Suzuki, Yoshishige; Yuasa, Shinji

    2012-04-01

    We prepared magnetic tunnel junction films with PtMn/CoFe/Ru/CoFeB/MgO tunnel barrier/FeB free layer/MgO cap layer/Ta multilayers using sputtering and measured magnetic and magnetoresistive properties of the films at room temperature. The magnetization curves of the FeB plane film measured under perpendicular-to-plane magnetic fields showed much smaller saturation fields (Hs) than those expected from the demagnetizing field. Hs decreased from 4 to 0.4 kOe with increasing MgO cap layer thickness. The small Hs is due to the perpendicular magnetic anisotropy (PMA) induced at both MgO barrier-FeB and FeB-MgO cap interfaces. After microfabrication, the small free layer cells having a 1.6 nm thick MgO cap layer showed a magnetization easy axis in the perpendicular-to-plane direction. By inducing PMA from both upper and lower interfaces, we can stabilize the magnetization of the relatively thick (2 nm) FeB free layer in the perpendicular-to-plane direction.

  7. Strain-induced reversible modulation of the magnetic anisotropy in perpendicularly magnetized metals deposited on a flexible substrate

    NASA Astrophysics Data System (ADS)

    Ota, Shinya; Hibino, Yuki; Bang, Do; Awano, Hiroyuki; Kozeki, Takahiro; Akamine, Hirokazu; Fujii, Tatsuya; Namazu, Takahiro; Takenobu, Taishi; Koyama, Tomohiro; Chiba, Daichi

    2016-04-01

    In this study, the strain-induced change in the magnetic anisotropy of perpendicularly magnetized thin metals (TbFeCo and Pt/Co/Pt) deposited on a polyethylene naphthalate flexible substrate was investigated. The in-plane uniaxial tensile strain was reversibly applied up to 2%. The magnetic anisotropy was reversibly changed in both samples with applied stress. In the TbFeCo film, a marked change in magnetic anisotropy energy of 1.2 × 105 J/m3 was observed. In the Pt/Co/Pt film, where the thickness of Co was 2-4 monolayers, the stress-induced changes in interface and volume contributions to magnetic anisotropy were individually determined.

  8. Micromagnetics of side shielded perpendicular magnetic recording heads

    NASA Astrophysics Data System (ADS)

    Takano, Kenichi; Liu, Yue; Liu, Kowang; Bai, Daniel Z.; Min, Tai; Wu, Yan; Dovek, Moris

    Micromagnetic models of side shielded perpendicular magnetic recording heads show detailed magnetization configuration of the trailing and side shield during the dynamic writing process. The calculation result indicates possible origins of three kinds. The leakage field at the side shield edge, the side shield saturation, and trailing and side shield domain switching. The side shield edge and the saturation induced fields are based on the geometric boundary and they are limited to just around the side shield edge. However the shield switching field can spread to far track position from the side shield to the trailing shield, and it originates from magnetic boundary of the domains and wall formed during the dynamic writing process. As a result, it produces bump field at far track positions in some trailing and side shields.

  9. Perpendicular magnetic anisotropy of two-dimensional Rashba ferromagnets

    NASA Astrophysics Data System (ADS)

    Kim, Kyoung-Whan; Lee, Kyung-Jin; Lee, Hyun-Woo; Stiles, M. D.

    2016-11-01

    We compute the magnetocrystalline anisotropy energy within two-dimensional Rashba models. For a ferromagnetic free-electron Rashba model, the magnetic anisotropy is exactly zero regardless of the strength of the Rashba coupling, unless only the lowest band is occupied. For this latter case, the model predicts in-plane anisotropy. For a more realistic Rashba model with finite band width, the magnetic anisotropy evolves from in-plane to perpendicular and back to in-plane as bands are progressively filled. This evolution agrees with first-principles calculations on the interfacial anisotropy, suggesting that the Rashba model captures energetics leading to anisotropy originating from the interface provided that the model takes account of the finite Brillouin zone. The results show that the electron density modulation by doping or an external voltage is more important for voltage-controlled magnetic anisotropy than the modulation of the Rashba parameter.

  10. Perpendicular-magnetic-anisotropy CoFeB racetrack memory

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Zhao, W. S.; Ravelosona, D.; Klein, J.-O.; Kim, J. V.; Chappert, C.

    2012-05-01

    Current-induced domain wall motion in magnetic nanowires drives the invention of a novel ultra-dense non-volatile storage device, called "racetrack memory." Combining with magnetic tunnel junctions write and read heads, CMOS integrability and fast data access speed can also be achieved. Recent experimental progress showed that perpendicular-magnetic anisotropy (PMA) CoFeB could be a good candidate to build up racetrack memory and promise high performance like high-density (e.g., ˜1 F2/bit), fast-speed, and low-power beyond classical spin transfer torque memories. In this paper, we first present the design of PMA CoFeB racetrack memory and a spice-compatible model to perform mixed simulation with CMOS circuits. Its area, speed, and power dissipation performance has been simulated and evaluated based on different technology nodes.

  11. Magnetization reversal mechanism in perpendicular exchange-coupled Fe/L10-FePt bilayers

    NASA Astrophysics Data System (ADS)

    Varvaro, G.; Albertini, F.; Agostinelli, E.; Casoli, F.; Fiorani, D.; Laureti, S.; Lupo, P.; Ranzieri, P.; Astinchap, B.; Testa, A. M.

    2012-07-01

    The magnetization reversal mechanism in perpendicular soft/hard Fe/FePt exchange-coupled bilayers has been investigated as a function of the soft layer thickness (tFe = 2, 3.5, 5 nm) combining magnetization loops at variable angle, magnetic domain analysis by magnetic force microscopy and numerical micromagnetic simulations. The analytical model proposed in the literature can properly account for some features of the reversal mechanism, such as positive nucleation fields and the reduction of the perpendicular coercive field and remanence by increasing the soft layer thickness, but cannot satisfactorily describe the magnetization process of real systems. We showed that for a thickness of the soft layer exceeding the FePt exchange length (˜2 nm), numerical micromagnetic calculations are needed to reproduce experimental observations. Indeed, just above the coercive field, the magnetization reversal does not proceed in single step switching, as predicted by the analytical model, but according to a more complex process: evolution of nucleated magnetic domains whose magnetization is approximately along the surface normal in the hard layer and slightly out of the film plane in the soft layer, followed by rotation of Fe moments along the field direction.

  12. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

    PubMed Central

    Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.

    2016-01-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. PMID:27098108

  13. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

    NASA Astrophysics Data System (ADS)

    Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.

    2016-04-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.

  14. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.

    PubMed

    Zhang, S F; Gan, W L; Kwon, J; Luo, F L; Lim, G J; Wang, J B; Lew, W S

    2016-04-21

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 10(11) A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.

  15. Cosmic-ray streaming perpendicular to the mean magnetic field

    NASA Technical Reports Server (NTRS)

    Forman, M. A.; Jokipii, J. R.; Owens, A. J.

    1974-01-01

    Starting from a quasi-linear approximation for the ensemble-averaged particle distribution function in a random magnetic field, the complete diffusion tensor is derived. This is done by assuming a simple form for the ensemble-averaged distribution function, explicitly retaining all components of the streaming flux. This derivation obtains the antisymmetric terms in a natural manner. The necessary dropping of higher-order terms gives a criterion for the lower-energy limit of validity of the perpendicular and antisymmetric diffusion coefficients. The limit for the assumed distribution function is about 0.8 GV rigidity in the interplanetary field near 1 AU.

  16. Anomalous enhancement in interfacial perpendicular magnetic anisotropy through uphill diffusion.

    PubMed

    Das, Tanmay; Kulkarni, Prabhanjan D; Purandare, S C; Barshilia, Harish C; Bhattacharyya, Somnath; Chowdhury, Prasanta

    2014-06-17

    We observed interfacial chemical sharpening due to uphill diffusion in post annealed ultrathin multilayer stack of Co and Pt, which leads to enhanced interfacial perpendicular magnetic anisotropy (PMA). This is surprising as these elements are considered as perfectly miscible. This chemical sharpening was confirmed through quantitative energy dispersive x-ray (EDX) spectroscopy and intensity distribution of images taken on high angle annular dark field (HAADF) detector in Scanning Transmission Electron Microscopic (STEM) mode. This observation demonstrates an evidence of miscibility gap in ultrathin coherent Co/Pt multilayer stacks.

  17. Giant perpendicular magnetic anisotropy of an Ir monolayer on a NiAl(001) surface

    NASA Astrophysics Data System (ADS)

    Kim, Dongyoo; Yang, Jeonghwa; Hong, Jisang

    2009-08-01

    Using the state-of-the-art full potential linearized augmented plane-wave method, we have investigated the magnetic properties of Os and Ir monolayer (ML) film on NiAl(001) surface. It has been found that the one ML of Os and Ir film can have ferromagnetic ground state with magnetic moment of 0.35 and 0.64μB on Ni terminated surface, whereas both films display no sign of magnetic state on Al terminated surface. In addition, the surface Ni atom has an induced magnetic moment of 0.26μB in Ir/NiAl(001), while only 0.09μB is observed in Os/NiAl(001). We attribute the existence of magnetism to the interaction between 5d of adlayer and 3d of surface Ni. Moreover, we have obtained that the Os/NiAl(001) and Ir/NiAl(001) films show a perpendicular magnetic anisotropy (PMA). Surprisingly, it appears that the Ir/NiAl(001) has a giant PMA energy of 7.18 meV.

  18. Pulse electrodeposition and electrochemical quartz crystal microbalance techniques for high perpendicular magnetic anisotropy cobalt nanowire arrays

    SciTech Connect

    Ursache, Andrei; Goldbach, James T.; Russell, Thomas P.; Tuominen, Mark T.

    2005-05-15

    This research is focused on the development of pulse electrodeposition techniques to fabricate a high-density array of vertically oriented, high-magnetic anisotropy cobalt nanowires using a porous polymer film template. This type of array is a competitive candidate for future perpendicular magnetic media capable of storage densities exceeding 1 Terabit/in.{sup 2} The polymer template, derived from a self-assembling P(S-b-MMA) diblock copolymer film, provides precise control over the nanowire diameter (15 nm) and interwire spacing (24 nm), whereas nanowire length (typically 50 to 1000 nm) is controlled accurately with the aid of real-time electrochemical quartz crystal monitoring. Pulse and pulse-reversed electrodeposition techniques, as compared to dc, are shown to significantly enhance the perpendicular magnetic anisotropy of the magnetic nanowire array and ultimately result in coercivity as large as 2.7 kOe at 300 K. Magnetic and structural characterizations suggest that these properties arise from an improved degree of magnetocrystalline anisotropy (due to c-axis oriented crystal growth and improvements in crystal quality) that strongly supplements the basic shape anisotropy of the nanowires. Low temperature magnetometry is used to investigate exchange bias effects due to the incorporation of CoO antiferromagnetic impurities during the electrodeposition process and subsequent Co oxidation in air.

  19. Resolving the controversy of a possible relationship between perpendicular magnetic anisotropy and the magnetic damping parameter

    SciTech Connect

    Shaw, Justin M.; Nembach, Hans T.; Silva, T. J.

    2014-08-11

    We use broadband ferromagnetic resonance spectroscopy to systematically measure the Landau-Lifshitz damping parameter, perpendicular anisotropy, and the orbital moment asymmetry in Co{sub 90}Fe{sub 10}/Ni multilayers. No relationship is found between perpendicular magnetic anisotropy and the damping parameter in this material. However, inadequate accounting for inhomogeneous linewidth broadening, spin-pumping, and two-magnon scattering could give rise to an apparent relationship between anisotropy and damping. In contrast, the orbital-moment asymmetry and the perpendicular anisotropy are linearly proportional to each other. These results demonstrate a fundamental mechanism by which perpendicular anisotropy can be varied independently of the damping parameter.

  20. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m-1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  1. Dynamical skyrmion state in a spin current nano-oscillator with perpendicular magnetic anisotropy.

    PubMed

    Liu, R H; Lim, W L; Urazhdin, S

    2015-04-03

    We study the spectral characteristics of spin current nano-oscillators based on the Pt/[Co/Ni] magnetic multilayer with perpendicular magnetic anisotropy. By varying the applied magnetic field and current, both localized and propagating spin wave modes of the oscillation are achieved. At small fields, we observe an abrupt onset of the modulation sidebands. We use micromagnetic simulations to identify this state as a dynamical magnetic skyrmion stabilized in the active device region by spin current injection, whose current-induced dynamics is accompanied by the gyrotropic motion of the core due to the skew deflection. Our results demonstrate a practical route for controllable skyrmion manipulation by spin current in magnetic thin films.

  2. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

  3. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    PubMed Central

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory. PMID:25597496

  4. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy.

    PubMed

    Ma, Q L; Zhang, X M; Miyazaki, T; Mizukami, S

    2015-01-19

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (K(u)(eff)) over 6 Merg/cm(3) is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and K(u)(eff) of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

  5. Effect of soft underlayer magnetic anisotropy on perpendicular recording process

    NASA Astrophysics Data System (ADS)

    Lim, C. K.; Kim, E. S.; Yoon, S. Y.; Kong, S. H.; Lee, H. S.; Oh, H. S.; Kim, Y. S.

    2007-03-01

    The presence of the soft magnetic underlayer (SUL) in perpendicular magnetic recording (PMR) media is essential for the application. It is commonly understood that the SUL provides the return flux path and enhances the writing field by enhancing the recording field from the write pole. However, SUL increases the magnetic noise during the read back process due to magnetic domain walls in the SUL. Hence, it is common to grow SUL with large uniaxial or unidirectional magnetic anisotropy field ( H k) to reduce domain wall noise. In this paper, we explore the effect of increasing SUL H k on the recording process. We studied this effect by using the finite element micromagnetic simulation. Our simulation results show that the contribution of SUL to the writing field amplitude is reduced with increasing H k. This reduction in magnetic field from high H k SUL actually improves the recording performance due to the better field gradient at SUL. The simulation results are qualitatively consistent with the actual experimental data obtained from the Guzik measurement.

  6. Perpendicular magnetic anisotropy in FePt/AlN layered structure

    NASA Astrophysics Data System (ADS)

    Zhang, Cong; Sannomiya, Takumi; Muraishi, Shinji; Shi, Ji; Nakamura, Yoshio

    2014-09-01

    FePt/AlN layered structures were deposited onto fused quartz substrate by magnetron sputtering method and found to show in-plane anisotropy. However, annealing of the films leads to a transition of magnetic anisotropy from in-plane to perpendicular direction, and the perpendicular anisotropy gets stronger as the annealing temperature increases. Structural analysis shows that the FePt and AlN layers are textured with (111) and (002) orientations, respectively, along the film normal, and no ordering transformation is found for FePt alloy. To study the origin of the developed anisotropy, stress condition was analyzed with an equal biaxial stress model using X-ray diffraction 2 θ- ω scan method and interface quality was evaluated by X-ray reflectivity measurement and transmission electron microscopy observation. The results reveal that perpendicular magnetic anisotropy of the annealed FePt/AlN layered structure can be attributed to the enhanced interface anisotropy, which is due to flattening of the interfaces through annealing.

  7. Field driven ferromagnetic phase evolution originating from the domain boundaries in antiferromagnetically coupled perpendicular anitsotropy films

    SciTech Connect

    Jones, Juanita; Hauet, Thomas; Gunther, Christian; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

    2008-05-01

    Strong perpendicular anisotropy systems consisting of Co/Pt multilayer stacks that are antiferromagnetically coupled via thin Ru or NiO layers have been used as model systems to study the competition between local interlayer exchange and long-range dipolar interactions [1,2]. Magnetic Force Microscopy (MFM) studies of such systems reveal complex magnetic configurations with a mix of antiferromagnetic (AF) and ferromagnetic (FM) phases. However, MFM allows detecting surface stray fields only and can interact strongly with the magnetic structure of the sample, thus altering the original domain configuration of interest [3,4]. In the current study they combine magnetometry and state-of-the-art soft X-ray transmission microscopy (MXTM) to investigate the external field driven FM phase evolution originating from the domain boundaries in such antiferromagnetically coupled perpendicular anisotropy films. MXTM allows directly imaging the perpendicular component of the magnetization in an external field at sub 100 nm spatial resolution without disturbing the magnetic state of the sample [5,6]. Here they compare the domain evolution for two similar [Co(4{angstrom})/Pt(7{angstrom})]x-1/{l_brace}Co(4{angstrom})/Ru(9{angstrom})/[Co(4{angstrom})/Pt(7{angstrom})]x-1{r_brace}16 samples with slightly different Co/Pt stack thickness, i.e. slightly different strength of internal dipolar fields. After demagnetization they obtain AF domains with either sharp AF domain walls for the thinner multilayer stacks or 'tiger-tail' domain walls (one dimensional FM phase) for the thicker stacks. When increasing the external field strength the sharp domain walls in the tinner stack sample transform into the one-dimensional FM phase, which then serves as nucleation site for further FM stripe domains that spread out into all directions to drive the system towards saturation. Energy calculations reveal the subtle difference between the two samples and help to understand the observed transition, when

  8. Kinetic theory of weak turbulence in magnetized plasmas: Perpendicular propagation

    SciTech Connect

    Yoon, Peter H.

    2015-08-15

    The present paper formulates a weak turbulence theory in which electromagnetic perturbations are assumed to propagate in directions perpendicular to the ambient magnetic field. By assuming that all wave vectors lie in one direction transverse to the ambient magnetic field, the linear solution and second-order nonlinear solutions to the equation for the perturbed distribution function are obtained. Nonlinear perturbed current from the second-order nonlinearity is derived in general form, but the limiting situation of cold plasma temperature is taken in order to derive an explicit nonlinear wave kinetic equation that describes three-wave decay/coalescence interactions among X and Z modes. A potential application of the present formalism is also discussed.

  9. Recording performance and system integration of perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Tanaka, Yoichiro

    2005-02-01

    Perpendicular recording has been actively developed for future high-density recording system. We studied the integration of the perpendicular recording system to the hard disk drive (HDD). Double layer perpendicular media and single-pole type perpendicular head with GMR reader were employed in 2.5″ HDD. As a result of the integration test, it was confirmed that perpendicular recording 2.5″ test HDDs functioned well at the capacity of 50 GB/platter. Through the drive integration, the features of the perpendicular recording were thoroughly studied. The complementary features between perpendicular recording and longitudinal recording are also discussed.

  10. Spin transfer torque in magnetic tunnel junctions with a perpendicularly magnetized polarizer

    NASA Astrophysics Data System (ADS)

    Moriyama, Takahiro; Gudmundsen, Theodore; Liu, Luqiao; Buhrman, R. A.; Ralph, D. C.

    2011-03-01

    Spin-torque devices containing magnetic layers with perpendicular magnetic anisotropy are of interest for strategies to reduce the switching currents in memory applications. We report spin-torque-driven ferromagnetic resonance (ST-FMR) measurements of the bias-dependent torque in magnetic tunnel junctions containing [Co/Ni]x multilayers possessing perpendicular anisotropy, acting as the polarizer layer providing spin-polarized current. We observe unusual dependence of the bias-dependent torque as a function of the magnetic orientation of the [Co/Ni]x multilayer. We speculate that this sensitivity to the magnetic orientation may originate from changes in the occupation of spin-polarized states at the Co/Ni interfaces associated with the perpendicular magnetic anisotropy.

  11. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

    PubMed Central

    Zhao, Weisheng; Zhao, Xiaoxuan; Zhang, Boyu; Cao, Kaihua; Wang, Lezhi; Kang, Wang; Shi, Qian; Wang, Mengxing; Zhang, Yu; Wang, You; Peng, Shouzhong; Klein, Jacques-Olivier; de Barros Naviner, Lirida Alves; Ravelosona, Dafine

    2016-01-01

    Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS) circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm) to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues. PMID:28787842

  12. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy.

    PubMed

    Zhao, Weisheng; Zhao, Xiaoxuan; Zhang, Boyu; Cao, Kaihua; Wang, Lezhi; Kang, Wang; Shi, Qian; Wang, Mengxing; Zhang, Yu; Wang, You; Peng, Shouzhong; Klein, Jacques-Olivier; de Barros Naviner, Lirida Alves; Ravelosona, Dafine

    2016-01-12

    Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS) circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm) to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  13. Origin of Perpendicular Magnetic Anisotropy and Large Orbital Moment in Fe Atoms on MgO

    NASA Astrophysics Data System (ADS)

    Baumann, S.; Donati, F.; Stepanow, S.; Rusponi, S.; Paul, W.; Gangopadhyay, S.; Rau, I. G.; Pacchioni, G. E.; Gragnaniello, L.; Pivetta, M.; Dreiser, J.; Piamonteze, C.; Lutz, C. P.; Macfarlane, R. M.; Jones, B. A.; Gambardella, P.; Heinrich, A. J.; Brune, H.

    2015-12-01

    We report on the magnetic properties of individual Fe atoms deposited on MgO(100) thin films probed by x-ray magnetic circular dichroism and scanning tunneling spectroscopy. We show that the Fe atoms have strong perpendicular magnetic anisotropy with a zero-field splitting of 14.0 ±0.3 meV /atom . This is a factor of 10 larger than the interface anisotropy of epitaxial Fe layers on MgO and the largest value reported for Fe atoms adsorbed on surfaces. The interplay between the ligand field at the O adsorption sites and spin-orbit coupling is analyzed by density functional theory and multiplet calculations, providing a comprehensive model of the magnetic properties of Fe atoms in a low-symmetry bonding environment.

  14. Origin of Perpendicular Magnetic Anisotropy and Large Orbital Moment in Fe Atoms on MgO.

    PubMed

    Baumann, S; Donati, F; Stepanow, S; Rusponi, S; Paul, W; Gangopadhyay, S; Rau, I G; Pacchioni, G E; Gragnaniello, L; Pivetta, M; Dreiser, J; Piamonteze, C; Lutz, C P; Macfarlane, R M; Jones, B A; Gambardella, P; Heinrich, A J; Brune, H

    2015-12-04

    We report on the magnetic properties of individual Fe atoms deposited on MgO(100) thin films probed by x-ray magnetic circular dichroism and scanning tunneling spectroscopy. We show that the Fe atoms have strong perpendicular magnetic anisotropy with a zero-field splitting of 14.0±0.3  meV/atom. This is a factor of 10 larger than the interface anisotropy of epitaxial Fe layers on MgO and the largest value reported for Fe atoms adsorbed on surfaces. The interplay between the ligand field at the O adsorption sites and spin-orbit coupling is analyzed by density functional theory and multiplet calculations, providing a comprehensive model of the magnetic properties of Fe atoms in a low-symmetry bonding environment.

  15. Magnetic tunnel junction based out-of-plane field sensor with perpendicular magnetic anisotropy in reference layer

    NASA Astrophysics Data System (ADS)

    Lee, Y. C.; Chao, C. T.; Li, L. C.; Suen, Y. W.; Horng, Lance; Wu, Te-Ho; Chang, C. R.; Wu, J. C.

    2015-05-01

    A magnetic tunnel junction (MTJ) with orthogonal magnetic anisotropy and consisting of Ta X/Co40Fe40B20 1.2 (reference)/MgO 2.0/Co20Fe60B20 2.3 (sensing)/Ta 5/Ru 5 (thickness in nanometers), where X ranges from 15 to 30, is proposed and investigated in response to the demand for out-of-plane field sensors. The reference layer with perpendicular magnetic anisotropy (PMA) demonstrates tuneable coercivity ranging from 72 Oe to 175 Oe. The sensing layer exhibits in-plane anisotropy with the avoidance of exchange coupling from the PMA reference layer because of a thick MgO barrier layer. The magnetization reversal behavior of micron scale devices not only corresponds well to the sheet film, but is also independent in terms of shape and size. The magnetoresistance curve exhibits a ratio of ˜27% in the presence of a perpendicular field and is insensitive to the in-plane field. For perpendicular field sensing, the dynamic range with a sensitivity of ˜0.3%/Oe can achieve ±25 Oe with a coercive field of less than 3 Oe. Additionally, even when bias is applied up to 9.1 mV, magnetic fluctuation still stays below 0.15 mOe.

  16. Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

    SciTech Connect

    Guo, Peng; Feng, Jiafeng E-mail: jiafengfeng@iphy.ac.cn; Wei, Hongxiang E-mail: jiafengfeng@iphy.ac.cn; Han, Xiufeng; Fang, Bin; Zhang, Baoshun; Zeng, Zhongming

    2015-01-05

    We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

  17. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

    SciTech Connect

    Cubukcu, Murat; Boulle, Olivier; Drouard, Marc; Mihai Miron, Ioan; Gaudin, Gilles; Langer, Juergen; Ocker, Berthold

    2014-01-27

    We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.

  18. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    SciTech Connect

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-21

    Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  19. Evolution of perpendicular magnetized tunnel junctions upon annealing

    NASA Astrophysics Data System (ADS)

    Devolder, Thibaut; Couet, S.; Swerts, J.; Furnemont, A.

    2016-04-01

    We study the evolution of perpendicularly magnetized tunnel junctions under 300 to 400 °C annealing. The hysteresis loops do not evolve much during annealing and they are not informative of the underlying structural evolutions. These evolutions are better revealed by the frequencies of the ferromagnetic resonance eigenmodes of the tunnel junction. Their modeling provides the exchange couplings and the layers' anisotropies within the stack which can serve as a diagnosis of the tunnel junction state after each annealing step. The anisotropies of the two CoFeB-based parts and the two Co/Pt-based parts of the tunnel junction decay at different rates during annealing. The ferromagnet exchange coupling through the texture-breaking Ta layer fails above 375 °C. The Ru spacer meant to promote a synthetic antiferromagnet behavior is also insufficiently robust to annealing. Based on these evolutions we propose optimization routes for the next generation tunnel junctions.

  20. Perpendicular propagating modes for weakly magnetized relativistic degenerate plasma

    SciTech Connect

    Abbas, Gohar; Bashir, M. F.; Murtaza, G.

    2012-07-15

    Using the Vlasov-Maxwell system of equations, the dispersion relations for the perpendicular propagating modes (i.e., X-mode, O-mode, and upper hybrid mode) are derived for a weakly magnetized relativistic degenerate electron plasma. By using the density (n{sub 0}=p{sub F}{sup 3}/3{pi}{sup 2} Planck-Constant-Over-Two-Pi {sup 3}) and the magnetic field values for different relativistic degenerate environments, the propagation characteristics (i.e., cutoff points, resonances, dispersions, and band widths in k-space) of these modes are examined. It is observed that the relativistic effects suppress the effect of ambient magnetic field and therefore the cutoff and resonance points shift towards the lower frequency regime resulting in enhancement of the propagation domain. The dispersion relations of these modes for the non-relativistic limit (p{sub F}{sup 2} Much-Less-Than m{sub 0}{sup 2}c{sup 2}) and the ultra-relativistic limit (p{sub F}{sup 2} Much-Greater-Than m{sub 0}{sup 2}c{sup 2}) are also presented.

  1. Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures

    SciTech Connect

    Cho, Eikhyun; Shin, Sang Chul; Han, Jungjin; Shim, Jongmyeong; Shin, Ryung; Kang, Shinill; Kim, Sanghoon; Hong, Jongill

    2015-01-26

    We proposed a method to fabricate perpendicular magnetic nanotracks in the cobalt oxide/palladium multilayer films using UV-nanoimprinting lithography and low-energy hydrogen-ion irradiation. This is a method to magnetize UV-imprinted intaglio nanotracks via low-energy hydrogen ion irradiation, resulting the irradiated region are magnetically separated from the non-irradiated region. Multilayered magnetic nanotracks with a line width of 140 nm, which were fabricated by this parallel process without additional dry etching process, exhibited a saturation magnetization of 290 emu cm{sup −3} and a coercivity of 2 kOe. This study demonstrates a cost-effective mass production of multilayered perpendicular magnetic nanotracks and offers the possibility to achieve high density storage and memory devices.

  2. Domain structure and perpendicular magnetic anisotropy in CoFe/Pd multilayers using off-axis electron holography

    NASA Astrophysics Data System (ADS)

    Zhang, Desai; Shaw, Justin M.; Smith, David J.; McCartney, Martha R.

    2015-08-01

    Multilayers of Co90Fe10/Pd with different bilayer thicknesses, have been deposited by dc-magnetron sputtering on thermally oxidized Si wafers. Transmission electron microscopy showed that the highly textured crystalline films had columnar structure, while scanning transmission electron microscopy and atomic force microscopy respectively indicated some layer waviness and surface roughness. The magnetic domain structure and perpendicular magnetic anisotropy (PMA) of the Co90Fe10/Pd multilayers were investigated by off-axis electron holography and magnetic force microscopy. The Co90Fe10 layer thickness was the primary factor determining the magnetic domain size and the perpendicular magnetization: both decreased as the thickness increased. The strongest PMA was observed in the sample with the thinnest magnetic layer of 0.45 nm.

  3. Confined dissipative droplet solitons in spin-valve nanowires with perpendicular magnetic anisotropy.

    PubMed

    Iacocca, Ezio; Dumas, Randy K; Bookman, Lake; Mohseni, Majid; Chung, Sunjae; Hoefer, Mark A; Akerman, Johan

    2014-01-31

    Magnetic dissipative droplets are localized, strongly nonlinear dynamical modes excited in nanocontact spin valves with perpendicular magnetic anisotropy. These modes find potential application in nanoscale structures for magnetic storage and computation, but dissipative droplet studies have so far been limited to extended thin films. Here, numerical and asymptotic analyses are used to demonstrate the existence and properties of novel solitons in confined structures. As a nanowire's width is decreased with a nanocontact of fixed size at its center, the observed modes undergo transitions from a fully localized two-dimensional droplet into a two-dimensional droplet edge mode and then a pulsating one-dimensional droplet. These solitons are interpreted as dissipative versions of classical, conservative solitons, allowing for an analytical description of the modes and the mechanisms of bifurcation. The presented results open up new possibilities for the study of low-dimensional solitons and droplet applications in nanostructures.

  4. Effect of the Film-Growth Defects on the Magnetic Microstructure of Epitaxial FePt Thin Film.

    PubMed

    Lee, W H; Yoo, J H; Yang, J M; Park, J K

    2015-11-01

    Effect of the columnar grain boundaries on the perpendicular magnetic domain structure of epitaxial L10 FePt (001) thin film has been studied using electron holography. The analysis of stray fields shows that both the continuous and columnar epitaxial films of L10 FePt (001) consist of perpendicular magnetic domain walls. In the columnar epitaxial film, however, the perpendicular domain walls tend to be confined to columnar grain boundaries, because columnar boundaries act as pinning sites for the domain walls. The domain wall pinning by columnar grain boundaries leads to a significant hysteresis effect in the perpendicular magnetization of L10 FePt epitaxial films.

  5. Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

    DOE PAGES

    Newhouse-Illige, Ty; Liu, Yaohua; Xu, M.; ...

    2017-05-16

    Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdOx tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and a largemore » proximity-induced magnetization of GdOx, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. Lastly, these results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.« less

  6. Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

    PubMed Central

    Newhouse-Illige, T.; Liu, Yaohua; Xu, M.; Reifsnyder Hickey, D.; Kundu, A.; Almasi, H.; Bi, Chong; Wang, X.; Freeland, J. W.; Keavney, D. J.; Sun, C. J.; Xu, Y. H.; Rosales, M.; Cheng, X. M.; Zhang, Shufeng; Mkhoyan, K. A.; Wang, W. G.

    2017-01-01

    Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdOx tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and a large proximity-induced magnetization of GdOx, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. These results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling. PMID:28508882

  7. Nonlithographic fabrication of 25 nm magnetic nanodot arrays with perpendicular anisotropy over a large area

    SciTech Connect

    Rahman, M. Tofizur; Shams, Nazmun N.; Lai, C.-H.

    2009-04-01

    A simple method is demonstrated to fabricate 25 nm magnetic nanodot arrays with perpendicular anisotropy over 10 cm{sup 2} coverage area. The nanodot arrays are fabricated by depositing Co/Pt multilayers (MLs) onto the SiO{sub 2} dot arrays formed on a Si wafer. At first, arrays of the SiO{sub 2} dots are fabricated on a Si wafer by anodizing a thin Al film deposited on it. The SiO{sub 2} dots are formed at the base of the anodized alumina (AAO) pores due to the selective oxidation of the Si through the AAO pores during over anodization of the Al film. The average diameter, periodicity, and height of the SiO{sub 2} dots are about 24, 43, and 17 nm, respectively. Then (Co(0.4 nm)/Pt(0.08 nm)){sub 8} MLs with a 3 nm Pt buffer layer is deposited onto the SiO{sub 2} dot arrays by sputtering. The average diameter and periodicity of the Co/Pt nanodot arrays are 25.4 and 43 nm, respectively, with narrow distribution. The nanodot arrays exhibit strong perpendicular anisotropy with a squareness ratio of unity and negative nucleation fields. The coercivity of the nanodot arrays is about one order higher than that of the continuous film, i.e., the same structure deposited on the SiO{sub 2} substrate. The magnetization reversal of the continuous film is governed by domain-wall motion, while the magnetization reversal of the nanodot arrays is dominated by the Stoner-Wohlfarth-like rotation. These results indicate that the fabricated structure can be considered as an isolated nanodot array.

  8. Tuning the perpendicular magnetic anisotropy of co-based layers in multilayered systems.

    PubMed

    Angelakeris, M; Papaioannou, E Th; Poulopoulos, P; Kopsidis, M; Kalogirou, O; Flevaris, N K

    2010-09-01

    The combination of Pt with Co either in alloy or in multilayer form is widely studied among the potential magnetic media for ultrahigh density magnetic recording. On the other hand the combination of Co with Cr in alloy form is currently providing commercial magnetic media. In an effort to further exploit and benefit from both systems, we fabricated Co(1-x)Cr(x)/Pt multilayers with two adjustable parameters. The first one is the Cr concentration on CoCr layer (x = 0, 5, 30), which modulates segregation effects on Co grains, thus tunes macroscopic magnetic features such as saturation magnetization and coercive field. The second one is the small layer thickness (< or = 0.6 nm) that affects interlayer coupling, perpendicular magnetic anisotropy and magnetization enhancement through spin polarization of Pt atoms in a ferromagnetic environment. The X-ray diffraction patterns verified the existence of multilayered structures following a preferable face-centered-cubic stacking. The Pt thickness and Cr concentration are found to significantly affect the macroscopic magnetic behavior. It is remarkable the fact that, samples present perpendicular anisotropy that scales with Pt thickness and temperature, even in the case of significant Cr concentration (30% in the alloy) when ferromagnetic behavior is expected to diminish according to relevant studies in alloys and in bulk films. Such an effect may be attributed to spin-polarization of Pt interlayers and was evidenced by X-ray magnetic circular dichroism. The spin-polarization of Pt is also the drive for the strong magneto-optic enhancement in the ultra-violet region between 4.5 and 5 eV shown by magnetooptic Kerr spectroscopy.

  9. Synthesis of L1{sub 0}-FePt perpendicular films with controllable coercivity and intergranular exchange coupling by interfacial microstructure control

    SciTech Connect

    Feng Chun; Zhang En; Yang Meiyin; Li Ning; Jiang Yong; Yu Guanghua; Li Baohe

    2010-06-15

    A series of FePtBi/Au multilayers were fabricated by magnetron sputtering. The interfacial microstructure control of Bi and Au atoms and its effect on comprehensive properties of L1{sub 0}-FePt perpendicular films were carefully studied. Results show that: perpendicular magnetic anisotropy of the L1{sub 0}-FePt film can be remarkably enhanced with the epitaxial inducement of Au atoms. On the other hand, intergranular exchange coupling (IEC) of the film is greatly decreased due to the isolation of FePt particles by nonmagnetic Au particles. Moreover, the controllable coercivity of the film can be realized by adjusting ordering degree of the film through diffusion of Bi atoms. Thus, an L1{sub 0}-FePt perpendicular film with controllable coercivity and no IEC is realized with the interfacial microstructure control of surfactant Bi and Au atoms.

  10. Ionic-liquid gating of perpendicularly magnetised CoFeB/MgO thin films

    NASA Astrophysics Data System (ADS)

    Liu, Y. T.; Agnus, G.; Ono, S.; Ranno, L.; Bernand-Mantel, A.; Soucaille, R.; Adam, J.-P.; Langer, J.; Ocker, B.; Ravelosona, D.; Herrera Diez, L.

    2016-07-01

    We present the modulation of anisotropy field, coercivity, and domain wall (DW) velocity in CoFeB/MgO thin films with perpendicular anisotropy by applying voltages across an ionic liquid gate. Domain wall velocities in the creep regime can be modulated by a factor of 4.2, and the anisotropy field of the device can be modulated by 40 mT when going from +0.8 V to -0.8 V. The applied E-fields are seen to significantly influence DWs' pinning, depinning, and nucleation processes. In addition, we report on the evolution of the magnetic properties of the liquid/solid device as a function of time going from the pristine CoFeB/MgO film through device fabrication and operation up to one month. These results show that the solid/liquid device structure based on CoFeB/MgO thin films can be an efficient way to control magnetic properties with voltages below 1 V.

  11. Strong perpendicular magnetic anisotropy energy density at Fe alloy/HfO2 interfaces

    NASA Astrophysics Data System (ADS)

    Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

    2017-05-01

    We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/Fe alloy/MgO thin film heterostructures when an ultrathin HfO2 passivation layer is inserted between the Fe alloy and MgO. This is accomplished by depositing one to two atomic layers of Hf onto the Fe alloy before the subsequent rf sputter deposition of the MgO layer. This Hf layer is fully oxidized during the subsequent deposition of the MgO layer, as confirmed by X-ray photoelectron spectroscopy measurements. The HfO2 insertion generates a strong interfacial perpendicular anisotropy energy density without any post-fabrication annealing treatment, for example, 1.7 erg / cm 2 for the Ta/Fe60Co20B20/HfO2/MgO heterostructure. We also demonstrate PMA even in Ni80Fe20/HfO2/MgO structures for low-damping, low-magnetostriction Ni80Fe20 thin films. Depending on the choice of the HM, further enhancements of the PMA can be realized by thermal annealing to at least 400 o C . We show that ultra-thin HfO2 layers offer a range of options for enhancing the PMA properties of magnetic heterostructures for spintronics applications.

  12. Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain.

    PubMed

    Shepley, P M; Rushforth, A W; Wang, M; Burnell, G; Moore, T A

    2015-01-21

    The perpendicular magnetic anisotropy K(eff), magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K(eff), measured by the extraordinary Hall effect, is reduced by 10 kJ/m(3) by tensile strain out-of-plane ε(z) = 9 × 10(-4), independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100%, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.

  13. Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

    PubMed Central

    Shepley, P. M.; Rushforth, A. W.; Wang, M.; Burnell, G.; Moore, T. A.

    2015-01-01

    The perpendicular magnetic anisotropy Keff, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85–1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. Keff, measured by the extraordinary Hall effect, is reduced by 10 kJ/m3 by tensile strain out-of-plane εz = 9 × 10−4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2–4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100%, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity. PMID:25605499

  14. Contributions of Co and Fe orbitals to perpendicular magnetic anisotropy of MgO/CoFeB bilayers with Ta, W, IrMn, and Ti underlayers

    NASA Astrophysics Data System (ADS)

    Kim, Sanghoon; Baek, Seung-heon Chris; Ishibashi, Mio; Yamada, Kihiro; Taniguchi, Takuya; Okuno, Takaya; Kotani, Yoshinori; Nakamura, Tetsuya; Kim, Kab-Jin; Moriyama, Takahiro; Park, Byong-Guk; Ono, Teruo

    2017-07-01

    We study the perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO bilayers in contact with W, Ta, IrMn, and Ti, which have been suggested for use as the spin-orbit-torque-related underlayers. The saturation magnetization of CoFeB depends on the underlayer material used owing to the formation of a dead layer that affects the PMA strength of each film. The X-ray magnetic circular dichroism measurement reveals that interfacial intermixing suppresses only the perpendicular orbital moment of Fe, whereas it simultaneously suppresses both the perpendicular and in-plane orbital moments of Co.

  15. Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy.

    PubMed

    Ueno, Tetsuro; Sinha, Jaivardhan; Inami, Nobuhito; Takeichi, Yasuo; Mitani, Seiji; Ono, Kanta; Hayashi, Masamitsu

    2015-10-12

    We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures.

  16. Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy

    PubMed Central

    Ueno, Tetsuro; Sinha, Jaivardhan; Inami, Nobuhito; Takeichi, Yasuo; Mitani, Seiji; Ono, Kanta; Hayashi, Masamitsu

    2015-01-01

    We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures. PMID:26456454

  17. Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ueno, Tetsuro; Sinha, Jaivardhan; Inami, Nobuhito; Takeichi, Yasuo; Mitani, Seiji; Ono, Kanta; Hayashi, Masamitsu

    2015-10-01

    We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures.

  18. Magnetic patterning using ion irradiation for highly ordered CoPt alloys with perpendicular anisotropy

    SciTech Connect

    Abes, M.; Venuat, J.; Muller, D.; Carvalho, A.; Schmerber, G.; Beaurepaire, E.; Dinia, A.; Pierron-Bohnes, V.

    2004-12-15

    We used a combination of ion irradiation and e-beam lithography to magnetically pattern an ordered CoPt alloy with strong perpendicular magnetic anisotropy. Ion irradiation disorders the alloy and strongly reduces the magnetic anisotropy. Magnetic force microscopy showed a regular array of 1 {mu}m{sup 2} square dots with perpendicular anisotropy separated by 1 {mu}m large ranges with in-plane anisotropy. This is further confirmed by magnetic measurements, which showed that arrays protected by a 200 nm Pt layer present the same coercive field and the same perpendicular anisotropy as before irradiation. This is promising for applications in magnetic recording technologies.

  19. Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

    SciTech Connect

    You, Chun-Yeol

    2014-01-28

    We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

  20. Controlling the competing magnetic anisotropy energies in FineMET amorphous thin films with ultra-soft magnetic properties

    NASA Astrophysics Data System (ADS)

    Masood, Ansar; McCloskey, P.; O'Mathúna, Cian; Kulkarni, S.

    2017-05-01

    Thickness dependent competing magnetic anisotropy energies were investigated to explore the global magnetic behaviours of FineMET amorphous thin films. A dominant perpendicular magnetization component in the as-deposited state of thinner films was observed due to high magnetoelastic anisotropy energy which arises from stresses induced at the substrate-film interface. This perpendicular magnetization component decreases with increasing film thickness. Thermal annealing at elevated temperature revealed a significant influence on the magnetization state of the FineMET thin films and controlled annealing steps leads to ultra-soft magnetic properties, making these thin films alloys ideal for a wide range of applications.

  1. Atomic-layer alignment tuning for giant perpendicular magnetocrystalline anisotropy of 3d transition-metal thin films.

    PubMed

    Hotta, K; Nakamura, K; Akiyama, T; Ito, T; Oguchi, T; Freeman, A J

    2013-06-28

    The magnetocrystalline anisotropy (MA) of Fe-based transition-metal thin films, consisting of only magnetic 3d elements, was systematically investigated from full-potential linearized augmented plane-wave calculations. The results predict that giant MA with a perpendicular magnetic easy axis (PMA) can be achieved by tuning the atomic-layer alignments in an Fe-Ni thin film. This giant PMA arises from the spin-orbit coupling interaction between occupied and unoccupied Ni dx2-y2,xy bands crossing the Fermi level. A promising 3d transition-metal thin film for the MgO-based magnetic tunnel junctions with the giant PMA was, thus, demonstrated.

  2. Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt-Graphene Heterostructures.

    PubMed

    Yang, Hongxin; Vu, Anh Duc; Hallal, Ali; Rougemaille, Nicolas; Coraux, Johann; Chen, Gong; Schmid, Andreas K; Chshiev, Mairbek

    2016-01-13

    We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25 Å. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis, which help understanding of the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose superexchange stabilized Co-graphene heterostructures with a robust constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point toward possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20-times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies.

  3. Perpendicular magnetic anisotropy in amorphous ferromagnetic CoSiB/Pt multilayers.

    PubMed

    Hwang, J Y; Park, J S; Yim, H I; Kim, T W; Shin, D Y; Lee, S B

    2011-01-01

    Magnetic anisotropy properties of amorphous ferromagnetic CoSiB/Pt multilayers with perpendicular magnetic anisotropy (PMA, K(u)) were systematically investigated as a function of CoSiB layer thickness (t(coSiB)) and Pt layer thickness (t(Pt)). In two series of [CoSiB t(coSiB)Pt t(P1)]5 multilayers, the perpendicular coercivity (H(c)) increased to reach a maximum and then decreased with further increase in both t(coSiB) and t(Pt), due to intermixing of CoSiB/Pt interfaces. Particularly, using the amorphous soft magnetic CoSiB, the coercivity became very sensitive to the CoSiB thickness. These multilayer films exhibited a high K(u) of 2 x 10(6) erg/cc and a high H(c) of 360 Oe with marked squareness. It was found that even after annealing at 350 degrees C, the CoSiB/Pt multilayers had a high PMA and their H(c) increased.

  4. Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy

    PubMed Central

    You, Long; Lee, OukJae; Bhowmik, Debanjan; Labanowski, Dominic; Hong, Jeongmin; Bokor, Jeffrey; Salahuddin, Sayeef

    2015-01-01

    Spin orbit torque (SOT) provides an efficient way to significantly reduce the current required for switching nanomagnets. However, SOT generated by an in-plane current cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultrascaled dimensions. Here, we show that it is possible to switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the direction, normal to the film plane. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a previously unidentified approach for controlling nanomagnets with SOT. PMID:26240358

  5. Interfacial perpendicular magnetic anisotropy in CoFeB/MgO structure with various underlayers

    NASA Astrophysics Data System (ADS)

    Oh, Young-Wan; Lee, Kyeong-Dong; Jeong, Jong-Ryul; Park, Byong-Guk

    2014-05-01

    Interfacial perpendicular magnetic anisotropy (PMA) in CoFeB/MgO structures was investigated and found to be critically relied on underlayer material and annealing temperature. With Ta or Hf underlayer, clear PMA is observed in as-deposited samples while no PMA was shown in those with Pt or Pd. This may be attributed to smaller saturation magnetization of the films with Ta or Hf underlayer, which makes the PMA of CoFeB/MgO interface dominates over demagnetization field. On the contrary, samples with Pt or Pd demonstrate PMA only after annealing, which might be due to the CoPt (or CoPd) alloy formation that enhances PMA.

  6. The spin-wave spectrum of layered magnetic thin films

    NASA Astrophysics Data System (ADS)

    van Stapele, R. P.; Greidanus, F. J. A. M.; Smits, J. W.

    1985-02-01

    The ferromagnetic resonance spectrum of a layered magnetic thin film is expected to show a number of standing spin-wave resonances with a wavelength that matches the thickness of the film. For the case of perpendicular resonance such spectra were calculated for some typical films in which magnetic layers are alternated with weaker magnetic layers. Some useful approximations are discussed. The results of the calculations are compared with experimental perpendicular spectra measured on films in which fifty Permalloy layers alternate with Ni layers.

  7. Manipulation of magnetism in perpendicularly magnetized Heusler alloy Co2FeAl0.5Si0.5 by electric-field at room temperature

    NASA Astrophysics Data System (ADS)

    Wang, H. L.; Wu, Y.; Yu, H. J.; Jiang, Y.; Zhao, J. H.

    2016-09-01

    The electrical manipulation of magnetic properties in perpendicularly magnetized Co2FeAl0.5Si0.5 ultra-thin films has been investigated. An electric-field is applied by utilizing either a solid-state dielectric HfO2 film or an ionic gel film as the gate insulator in the form of a field effect parallel capacitor. Obvious changes of the coercive field and Curie temperature (˜24 K) by gating voltage are observed for a 0.8 nm thick film, while a clear change of the magnetic anisotropy is obtained for the 1.1 nm thick one. The experimental results have been attributed to both the electric-field-induced modulation of carrier density near the interface and the oxidation-reduction effect inside the magnetic films.

  8. Perpendicular magnetization of CoFeB on top of an amorphous buffer layer

    NASA Astrophysics Data System (ADS)

    Kim, Dongseok; Jung, K. Y.; Joo, Sungjung; Jang, Youngjae; Hong, Jinki; Lee, B. C.; You, C. Y.; Cho, J. H.; Kim, M. Y.; Rhie, K.

    2015-01-01

    Perpendicular magnetic anisotropy was observed in sputtered FeZr/CoFeB/MgO multilayers. A thin paramagnetic amorphous FeZr layer was used as a buffer layer and perpendicular anisotropy was obtained by annealing the samples without an external magnetic field. The critical CoFeB thickness for perpendicular anisotropy was 1.8 nm; the anisotropy changes from out-of-plane to in-plane as the CoFeB thickness increases beyond this point. Perpendicular anisotropy was also enhanced when a Ta layer was capped on top of the MgO layer. The amorphous buffer provided better perpendicular anisotropy than previously reported Ta buffer, and it may be applied to perpendicular magnetization MRAM devices where good uniformity of tunnel junctions is required.

  9. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

    PubMed Central

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-01-01

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of −5erg/cm2. This work proposes a novel p-MTJ structure for the future STT-MRAM progress. PMID:28233780

  10. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers.

    PubMed

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-02-24

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of -5erg/cm(2). This work proposes a novel p-MTJ structure for the future STT-MRAM progress.

  11. MnGa-based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

    NASA Astrophysics Data System (ADS)

    Mao, Siwei; Lu, Jun; Zhao, Xupeng; Wang, Xiaolei; Wei, Dahai; Liu, Jian; Xia, Jianbai; Zhao, Jianhua

    2017-02-01

    Because tetragonal structured MnGa alloy has intrinsic (not interface induced) giant perpendicular magnetic anisotropy (PMA), ultra-low damping constant and high spin polarization, it is predicted to be a kind of suitable magnetic electrode candidate in the perpendicular magnetic tunnel junction (p-MTJ) for high density spin transfer torque magnetic random access memory (STT-MRAM) applications. However, p-MTJs with both bottom and top MnGa electrodes have not been achieved yet, since high quality perpendicular magnetic MnGa films can hardly be obtained on the MgO barrier due to large lattice mismatch and surface energy difference between them. Here, a MnGa-based fully p-MTJ with the structure of MnGa/Co2MnSi/MgO/Co2MnSi/MnGa is investigated. As a result, the multilayer is with high crystalline quality, and both the top and bottom MnGa electrodes show well PMA. Meanwhile, a distinct tunneling magnetoresistance (TMR) ratio of 65% at 10 K is achieved. Ultrathin Co2MnSi films are used to optimize the interface quality between MnGa and MgO barrier. A strong antiferromagnetic coupling in MnGa/Co2MnSi bilayer is confirmed with the interfacial exchange coupling constant of -5erg/cm2. This work proposes a novel p-MTJ structure for the future STT-MRAM progress.

  12. TbFeCo perpendicular magnetic recording media deposited on nanohole arrays of porous alumina layer

    NASA Astrophysics Data System (ADS)

    Tofizur Rahman, M.; Liu, Xiaoxi; Morisako, Akimitsu

    2006-04-01

    A nonlithographic fabrication method of magnetic nanodot array by using porous anodized alumina formed on a glass substrate is studied. We carried out anodic oxidation of a sputtered Al film at the anodic voltage in the range of 10-30 V, and found that the density of the nanohole arrays increased with the decrease in anodization voltage. On the other hand, hole diameter decreased with the decrease in anodic voltage. Then TbFeCo is deposited onto this porous array by sputtering with a thickness of around 20 nm and subsequently overcoated with 5 nm tungsten (W) for the protection from surface oxidation. The TbFeCo deposited on this porous layer shows complete perpendicular anisotropy. The coercivity increased with the decrease in anodization voltage as well as hole diameter. The coercivity of the TbFeCo deposited on the porous array with a mean hole diameter of around 15 nm is 4.3 kOe. The squareness ratio is also improved with the reduction of the hole diameter. From the angular dependence of coercivity, Hc, it is found that the Hc decreases gradually with the decrease of applied field angle from the perpendicular direction (easy axis) to in-plane direction (hard axis). This indicates that the magnetization reversal in the TbFeCo nanodot array occurs by Stoner-Wohlfarth model.

  13. Al substituted Ba ferrite films with high coercivity and excellent squareness for low noise perpendicular recording layer

    NASA Astrophysics Data System (ADS)

    Feng, J.; Matsushita, N.; Watanabe, K.; Nakagawa, S.; Naoe, M.

    1999-04-01

    Al substituted BaM (Al-BaM) ferrite films with composition of BaAlxFe12-xO19 (x=0,1,2) were deposited using facing targets sputtering apparatus on SiOx/Si wafers with a Pt seed layer. A postannealing process is necessary to crystallize the films. It was confirmed that the substrate temperature Ts is also one of the important parameters for the magnetic properties of the postannealed films. Al-BaM ferrite films exhibit the Ts dependence of magnetic properties different from that of simple BaM ones. With increase of the Al content x in Al-BaM ferrite films, 4πMs decreased, while Hc and the anisotropy field HA increased. It was found that acicular shape grains formed more easily in Al-BaM ferrite films than in simple BaM ones. The squareness S⊥ increased largely by substitution of Al for Fe. The Al-BaM ferrite films with high Hc⊥ (˜3 kOe) and large S⊥(˜0.9) may be applicable as perpendicular magnetic recording layers with low noise level.

  14. Effect of deposition technique of Ni on the perpendicular magnetic anisotropy in Co/Ni multilayers

    NASA Astrophysics Data System (ADS)

    Akbulut, S.; Akbulut, A.; Özdemir, M.; Yildiz, F.

    2015-09-01

    The perpendicular magnetic anisotropy (PMA) of Si/Pt 3.5/(Co 0.3/Ni 0.6)n /Co 0.3/ Pt 3 (all thicknesses are nm) multilayers were investigated for two different sample sets by using ferromagnetic resonance (FMR) and magnetooptic Kerr effect (MOKE) techniques. In the first sample set all layers (buffer, cap, Co and Ni) were grown by magnetron sputtering technique while in the second sample set Ni sub-layers were grown by molecular beam epitaxy (MBE) at high vacuum. Apart from deposition technique of Ni, all other parameters like thicknesses and growth rates of each layers are same for both sample sets. Multilayers in these two sample sets display PMA in the as grown state until a certain value of bilayer repetition (n) and the strength of PMA decreases with increasing n. Magnetic easy axis's of the multilayered samples switched from film normal to the film plane when n is 9 and 5 for the first and second sample sets, respectively. The reason for that, PMA was decreased due to increasing roughness with increasing n. This was confirmed by X Ray Reflectivity (XRR) measurements for both sample sets. Moreover, in the first sample set coercive field values are smaller than the second sample set, which means magnetic anisotropy is lower than the latter one. This stronger PMA is arising due to existence of stronger Pt (111) and Co/Ni (111) textures in the second sample set.

  15. Effect of annealing conditions on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO multilayers

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Hao, Liang; Cao, Jiangwei

    2016-04-01

    Films with a structure of Ta (5 nm)/Co20Fe60B20 (0.8-1.5 nm)/MgO (1 nm)/Ta (1 nm) were deposited on Corning glass substrates by magnetron sputtering. The as-deposited films with CoFeB layer thickness from 0.8 to 1.3 nm show perpendicular magnetic anisotropy (PMA). After annealing at a proper temperature, the PMA of the films can be enhanced remarkably. A maximum effective anisotropy field of up to 9 kOe was obtained for 1.0- and 1.1-nm-thick CoFeB layers annealed at an optimum temperature of 300 °C. A 4-kOe magnetic field was applied during annealing to study its effect on the PMA of the CoFeB layers. The results confirmed that applying a perpendicular magnetic field during annealing did not improve the maximum PMA of the films, but it did enhance the PMA of the thinner films at a lower annealing temperature.

  16. Is perpendicular magnetic anisotropy essential to all-optical ultrafast spin reversal in ferromagnets?

    PubMed

    Zhang, G P; Bai, Y H; George, Thomas F

    2017-08-03

    All-optical spin reversal presents a new opportunity for spin manipulations, free of a magnetic field. Most of all-optical-spin-reversal ferromagnets are found to have a perpendicular magnetic anisotropy (PMA), but it has been unknown whether PMA is necessary for spin reversal. Here we theoretically investigate magnetic thin films with either PMA or in-plane magnetic anisotropy (IMA). Our results show that spin reversal in IMA systems is possible, but only with a longer laser pulse and within a narrow laser parameter region. Spin reversal does not show a strong helicity dependence where the left- and right-circularly polarized light lead to the identical results. By contrast, the spin reversal in PMA systems is robust, provided both the spin angular momentum and laser field are strong enough while the magnetic anisotropy itself is not too strong. This explains why experimentally the majority of all-optical spin-reversal samples are found to have strong PMA and why spins in Fe nanoparticles only cant out of plane. It is the laser-induced spin-orbit torque that plays a key role in the spin reversal. Surprisingly, the same spin-orbit torque results in laser-induced spin rectification in spin-mixed configuration, a prediction that can be tested experimentally. Our results clearly point out that PMA is essential to spin reversal, though there is an opportunity for in-plane spin reversal.

  17. Is perpendicular magnetic anisotropy essential to all-optical ultrafast spin reversal in ferromagnets?

    NASA Astrophysics Data System (ADS)

    Zhang, G. P.; Bai, Y. H.; George, Thomas F.

    2017-10-01

    All-optical spin reversal presents a new opportunity for spin manipulations, free of a magnetic field. Most of all-optical-spin-reversal ferromagnets are found to have a perpendicular magnetic anisotropy (PMA), but it has been unknown whether PMA is necessary for spin reversal. Here we theoretically investigate magnetic thin films with either PMA or in-plane magnetic anisotropy (IMA). Our results show that spin reversal in IMA systems is possible, but only with a longer laser pulse and within a narrow laser parameter region. Spin reversal does not show a strong helicity dependence where the left- and right-circularly polarized light lead to the identical results. By contrast, the spin reversal in PMA systems is robust, provided both the spin angular momentum and laser field are strong enough while the magnetic anisotropy itself is not too strong. This explains why experimentally the majority of all-optical spin-reversal samples are found to have strong PMA and why spins in Fe nanoparticles only cant out of plane. It is the laser-induced spin–orbit torque that plays a key role in the spin reversal. Surprisingly, the same spin–orbit torque results in laser-induced spin rectification in spin-mixed configuration, a prediction that can be tested experimentally. Our results clearly point out that PMA is essential to spin reversal, though there is an opportunity for in-plane spin reversal.

  18. Simultaneous achievement of high perpendicular exchange bias and low coercivity by controlling ferromagnetic/antiferromagnetic interfacial magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Shiratsuchi, Yu; Kuroda, Wataru; Nguyen, Thi Van Anh; Kotani, Yoshinori; Toyoki, Kentaro; Nakamura, Tetsuya; Suzuki, Motohiro; Nakamura, Kohji; Nakatani, Ryoichi

    2017-02-01

    This study investigates the influence of Pt and Au spacer layers on the perpendicular exchange bias field and coercivity of Pt/Co/(Pt or Au)/Cr2O3/Pt films. When using a Pt-spacer, the perpendicular exchange bias was highly degraded to less than 0.1 erg/cm2, which was about half that of the Au-spacer system. The Au spacer also suppressed the enhancement in coercivity that usually occurs at around room temperature when using Pt. It is suggested that this difference in exchange bias field is due to in-plane interfacial magnetic anisotropy at the Pt/Cr2O3 interface, which cants the interfacial Cr spin from the surface normal and results in degradation in the perpendicular exchange bias.

  19. Looking back at perpendicular magnetic recording R&D in NEC

    NASA Astrophysics Data System (ADS)

    Tagami, Katsumichi

    2012-02-01

    This paper reports perpendicular magnetic recording (PMR) circumstances and the results based on the reference published by NEC. The PMR flexible disks using Co-Cr-Ta films were investigated. Pass wear durability of Co-Cr-Ta film strongly depends on the base film surface roughness and Young's modulus values of Co-Cr-Ta films. Pass wear durability, more than 10 million passes, was confirmed under a high temperature (60 °C) and a high humidity (80% RH) condition, as well as a low temperature (5 °C) condition. The read/write characteristics for double-layered PMR media were examined by using a combination of a single-pole-type (SPT) write head and a magnetoresistive (MR) read head, and a conventional merged ring type inductive (ID) write head/MR read head. By differential equalization of the reproduced voltage, the bit error rate less than 10 -6 at 3 Gb/in. 2 was obtained for the SPT/MR head combination. The antenna effect for PMR realization was analyzed using the merged ring type ID/MR head. In order to increase the magnetic circuit resistance from the ID head pole to the soft underlayer, we developed the sendust (FeAlSi) soft underlayer with low magnetic permeability. We confirmed that the recorded signal has better stability under the ID/MR head-loaded condition than the SPT head-loaded condition. These results show that there are the head and media solutions to realize PMR. We had confidence that we could use the basic structure of the commercial ID/MR head for the PMR head.

  20. Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance

    SciTech Connect

    Zhang, Y.; Klein, J.-O.; Chappert, C.; Ravelosona, D.; Zhao, W. S.

    2014-01-20

    High current density is indispensable to shift domain walls (DWs) in magnetic nanowires, which limits the using of racetrack memory (RM) for low power and high density purposes. In this paper, we present perpendicular-magnetic-anisotropy (PMA) Co/Ni RM with global magnetic field assistance, which lowers the current density for DW motion. By using a compact model of PMA RM and 40 nm design kit, we perform mixed simulation to validate the functionality of this structure and analyze its density potential. Stochastic DW motion behavior has been taken into account and statistical Monte-Carlo simulations are carried out to evaluate its reliability performance.

  1. Methods for characterizing magnetic footprints of perpendicular magnetic recording writer heads

    PubMed Central

    Li, Shaoping; Lin, Ed; George, Zach; Terrill, Dave; Mendez, H.; Santucci, J.; Yie, Derek

    2014-01-01

    In this work, the magnetic footprints, along with some of its dynamic features in recording process, of perpendicular magnetic recording writer heads have been characterized by using three different techniques. Those techniques are the spin-stand stationary footprint technique, the spin-stand dynamic footprint technique, and the coherent writing technique combined with magnetic force microscope imaging method. The characteristics of those techniques have been compared to one another. It was found experimentally that the spin-stand stationary method could not precisely catch some peculiar recording dynamics of the write heads in certain conditions. The advantages and disadvantages among all those techniques are also examined and discussed in detail. PMID:24753633

  2. Microwave-assisted magnetization reversal in a Co/Pd multilayer with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Nozaki, Yukio; Narita, Naoyuki; Tanaka, Terumitsu; Matsuyama, Kimihide

    2009-08-01

    Microwave-assisted magnetization reversal in a rectangle of a Co/Pd multilayer with a perpendicular magnetic anisotropy is examined using vector network analyzer ferromagnetic resonance (FMR) spectroscopy. A microwave field is applied along the in-plane direction of the rectangle together with a negative dc easy-axis field smaller than the coercive field. Broadening or splitting of the peak profile in the FMR spectrum suggesting the formation of multidomain structure appears after the microwave field is applied. The dominance of microwave-assisted nucleation of magnetization is supported by the frequency dependence of the probability with which the multidomain structure appears.

  3. Methods for characterizing magnetic footprints of perpendicular magnetic recording writer heads

    SciTech Connect

    Li, Shaoping Lin, Ed; George, Zach; Terrill, Dave; Mendez, H.; Santucci, J.; Yie, Derek

    2014-05-07

    In this work, the magnetic footprints, along with some of its dynamic features in recording process, of perpendicular magnetic recording writer heads have been characterized by using three different techniques. Those techniques are the spin-stand stationary footprint technique, the spin-stand dynamic footprint technique, and the coherent writing technique combined with magnetic force microscope imaging method. The characteristics of those techniques have been compared to one another. It was found experimentally that the spin-stand stationary method could not precisely catch some peculiar recording dynamics of the write heads in certain conditions. The advantages and disadvantages among all those techniques are also examined and discussed in detail.

  4. Solar rotating magnetic dipole?. [around axis perpendicular to rotation axis of the sun

    NASA Technical Reports Server (NTRS)

    Antonucci, E.

    1974-01-01

    A magnetic dipole rotating around an axis perpendicular to the rotation axis of the sun can account for the characteristics of the surface large-scale solar magnetic fields through the solar cycle. The polarity patterns of the interplanetary magnetic field, predictable from this model, agree with the observed interplanetary magnetic sector structure.

  5. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    NASA Astrophysics Data System (ADS)

    Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

    2015-01-01

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  6. Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Ning, Keyu; Liu, Houfang; Ju, Zhenyi; Fang, Chi; Wan, Caihua; Cheng, Jinglei; Liu, Xiao; Li, Linsen; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Yang, Yi; Ren, Tian-Ling

    2017-01-01

    As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs) under various measurement temperatures. The large tunnel magneto-Seebeck (TMS) ratio up to -838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

  7. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    SciTech Connect

    Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

    2015-01-19

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  8. Angle-dependent X-ray magnetic circular dichroism study of enhanced perpendicular magnetic anisotropy in hybrid [CoO/Pd]2[Co/Pd]7 multilayers

    NASA Astrophysics Data System (ADS)

    Kim, D. H.; Lee, Eunsook; Kim, Hyun Woo; Seong, Seungho; Yang, Seung-Mo; Park, Hae-Soo; Hong, JinPyo; Kim, Younghak; Kim, J.-Y.; Kang, J.-S.

    2017-06-01

    We have investigated the angle-dependent orbital and spin magnetic moments of the [Co/Pd] multilayer (ML) films with intervening CoO layers under annealing by employing angle-dependent soft X-ray magnetic circular dichroism (XMCD). After annealing, the orbital magnetic moments of Co ions are found to be enhanced, with the maximum values along the perpendicular direction of [Co/Pd] ML, providing evidence for the origin of the improved perpendicular magnetic anisotropy (PMA) being the interface spin-orbit coupling. The induced Pd polarization was observed after annealing, demonstrating the strong Co-Pd hybridization arising from the Co-Pd alloy formation near the interface. The angle-dependent coercivity follows the 1 / cosθ behavior, suggesting that the magnetization reversal in the hysteresis curve in [Co/Pd] ML occurs mainly through the pinning mechanism.

  9. Numerical study of whistler instability with magnetic inhomogeneity perpendicular to background magnetic field

    NASA Astrophysics Data System (ADS)

    Lee, S. Y.; Lee, E.; Kim, K. H.; Lee, D. H.; Seon, J.; Jin, H.

    2016-12-01

    We investigate effects of magnetic inhomogeneity on the development of whistler instability using a two-dimensional relativistic electromagnetic particle-in-cell (PIC) code. Whistler instability is generated from electron temperature anisotropy, Tperp/Tpara > 1. We apply a gradient of magnetic field intensity perpendicular to background magnetic field. The perpendicular magnetic inhomogeneity with a constant thermal velocity of electrons yields a broad range of electron plasma beta, βe, which determines wave frequency, wave normal angle, and some other important properties of the excited whistler waves. As a result, the waves are excited with a broad range of frequencies and wave normal angles along the perpendicular direction. Interestingly, the whistler waves are separated into two frequency bands at 0.5Ωce, where Ωce is electron gyro-frequency, which is similar to the banded chorus waves observed in the magnetosphere. For the upper band whistler, the wave normal angle is relatively large and the wave power is weak. For the lower band whistler, on the other hand, the wave normal angle is very small and the wave power is strong.

  10. Spin Hall effect mediated current-induced deterministic switching in all-metallic perpendicularly magnetized Pt/Co/Pt trilayers

    NASA Astrophysics Data System (ADS)

    P, Vineeth Mohanan; Ganesh, K. R.; Kumar, P. S. Anil

    2017-09-01

    A magnetic field free current-induced deterministic switching is demonstrated in a perpendicularly magnetized all-metallic Pt/Co/Pt thin film system with a small tilt in anisotropy axis. We realized this in devices where the ultrathin Co layer was grown using an oblique angle sputter deposition technique that had resulted in a small tilt of magnetic anisotropy from the film normal. By performing out-of-plane magnetization hysteresis measurements under bias magnetic field applied along various in-plane directions the tilt angle was estimated to be around 3 .3∘ (±0 .3∘ ). A deterministic current-induced magnetization switching could be achieved when the in-plane current was applied perpendicular to the anisotropy tilt axis, but the switching was stochastic when the current was applied in the direction of the tilt (in the tilt plane). By preparing Pt/Co/Pt stacks with unequal top and bottom Pt thickness, sufficient spin-orbit torque (SOT) could be applied to switch the magnetization of the Co layer at current densities as low as 1.5 ×107 A/cm2. The switching phase diagram (SPD) constructed by plotting the critical current density versus applied in-plane magnetic field (HxIB) confirms spin Hall effect based SOT mechanism to be responsible for the magnetization switching. The asymmetry observed in the SPD (about HxIB=0 ) is in agreement with the macrospin simulations and it suggests that the tilt in the magnetic anisotropy from the film normal makes the switching deterministic even without an in-plane magnetic field bias.

  11. Ion heating perpendicular to the magnetic field. Technical report

    SciTech Connect

    Andre, M.; Chang, T.

    1994-03-28

    Several theories of ion heating perpendicular to the geomagnetic field are briefly reviewed and assessed. Perpendicular heating of ions leading to the formation of ion conics is common in the ionosphere and magnetosphere. Ion conics at altitudes above a few thousand kilometers are often associated with waves around the ion gyrofrequency. It is concluded that the majority of these ion conics that are locally heated or generated over extended altitude regimes, may be best explained by ion cyclotron resonance heating. At lower altitudes, particularly in the region of discrete auroras, energization by turbulence around the lower hybrid frequency seems to be an important heating mechanism.

  12. Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields

    NASA Astrophysics Data System (ADS)

    Luo, Linqiang; Kabir, Mehdi; Dao, Nam; Kittiwatanakul, Salinporn; Cyberey, Michael; Wolf, Stuart A.; Stan, Mircea; Lu, Jiwei

    2017-06-01

    DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co90Fe10) and free layer (Ni80Fe20) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. A magnetic hybrid structure was achieved for the study of spin torque oscillation by applying a perpendicular field >3 kOe. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogeneities in large sized device. The ability to manipulate spin-dynamics on large size devices could be proved useful for increasing the output power of the spin-transfer nano-oscillators (STNOs).

  13. Seed layer impact on structural and magnetic properties of [Co/Ni] multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Liu, Enlong; Swerts, J.; Devolder, T.; Couet, S.; Mertens, S.; Lin, T.; Spampinato, V.; Franquet, A.; Conard, T.; Van Elshocht, S.; Furnemont, A.; De Boeck, J.; Kar, G.

    2017-01-01

    [Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically, the seed layer material is studied to provide the desired face-centered cubic (fcc) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line processes also requires the PMA to survive post-annealing. In this paper, the impact of NiCr, Pt, Ru, and Ta seed layers on the structural and magnetic properties of [Co(0.3 nm)/Ni(0.6 nm)] multilayers is investigated before and after annealing. The multilayers were deposited in-situ on different seeds via physical vapor deposition at room temperature. The as-deposited [Co/Ni] films show the required fcc(111) texture on all seeds, but PMA is only observed on Pt and Ru. In-plane magnetic anisotropy is obtained on NiCr and Ta seeds, which is attributed to strain-induced PMA loss. PMA is maintained on all seeds after post-annealing up to 400 °C. The largest effective perpendicular anisotropy energy ( KUeff≈2 ×105 J/m3) after annealing is achieved on the NiCr seed. The evolution of PMA upon annealing cannot be explained by further crystallization during annealing or strain-induced PMA, nor can the observed magnetization loss and the increased damping after annealing. Here, we identify the diffusion of the non-magnetic materials from the seed into [Co/Ni] as the major driver of the changes in the magnetic properties. By selecting the seed and post-annealing temperature, the [Co/Ni] can be tuned in a broad range for both PMA and damping.

  14. Reducing media noise of perpendicular magnetic recording tape for over-50 TB class data cartridge

    NASA Astrophysics Data System (ADS)

    Matsunuma, S.; Inoue, T.; Watanabe, T.; Doi, T.; Gomi, S.; Mashiko, Y.; Hirata, K.; Nakagawa, S.

    2011-04-01

    To reduce medium noise inherent in a perpendicular magnetic recording tape, which is deposited by facing targets sputtering, we have examined an epitaxial double-layered structure consisting of a soft magnetic underlayer (SUL), bcc-FeCoB/fcc-NiFe/Si/bcc-FeCoB, on a 4.5 μm para-aromatic polyamide (aramid) film. An epitaxial soft magnetic bilayer reduces broadband noise by 5.6 dB at 337 kilo fluxchanges per inch (kfci) compared to a single SUL medium (Tape S). This is due to the reduction in the low-frequency noise, which originates from the domain walls of the SUL. Improvement of the crystal orientation of the magnetic layer hcp-CoPtCr-SiO2 and the intermediate layer hcp-Ru by inserting a fcc-NiFe spacer in laminated SULs extends the roll-off curve toward high linear density. When each SUL layer of the bilayer was made thinner, from 25 nm (Tape D2) to 10 nm (Tape D1), the medium noise decreased, improving the signal-to-noise ratio by 8.6 dB at 337 kfci compared to Tape S. In a high resolution playback test of Tape D1, an areal density of 45.0 gigabits per square inch (Gb/in.2) was confirmed. Achieved areal density means the capability of an over-50 terabyte (TB) capacity for a typical linear-formatted data cartridge.

  15. Properties of easy-plane/perpendicular magnetic anisotropy bilayers with varied interlayer exchange coupling

    NASA Astrophysics Data System (ADS)

    Fallarino, Lorenzo; Sluka, Volker; Kardasz, Bartek; Pinarbasi, Mustafa; Kent, Andrew D.

    We explore the possibility of an easy-cone ground state in coupled easy plane/easy axis magnetic bilayers. The samples consist of a Co/Ni multilayer with perpendicular magnetic anisotropy and a CoFe layer with easy-plane anisotropy separated by a variable thickness Ru layer. Using ferromagnetic resonance spectroscopy, we characterize the magnetic behavior of the coupled thin films for different Ru thicknesses by determining the resonance fields for both the acoustic and optical FMR modes. In particular, we observe a gap in the resonance field opening up between the two modes in angular-dependent FMR, which is direct evidence for the presence of interlayer coupling. Quantitative comparisons with a theoretical model indicate that by varying the Ru thickness the coupling strength can be tuned continuously from ferromagnetic to the anti-ferromagnetic. These results are consistent with a canted magnetic ground state in zero field, a state of interest for applications in spin-torque devices, such as current tunable spin-torque oscillators. Supported by NSF-DMR1309202 and Spin-Transfer Technologies Inc.

  16. Resonance properties of bi-component arrays of magnetic dots magnetized perpendicular to their planes

    NASA Astrophysics Data System (ADS)

    Kostylev, Mikhail; Zhong, Shudan; Ding, Junjia; Adeyeye, Adekunle O.

    2013-09-01

    The spin wave spectrum of dense arrays of rectangular elements periodically arranged in a two-dimensional magnonic crystal with a complex unit cell and magnetized perpendicularly to the array plane has been characterized using broadband ferromagnetic resonance (FMR) spectroscopy. The crystal's unit cell consists of non-collinear orientations of constituting elongated rectangular elements. We found that only one mode is excited in the perpendicular-to-plane FMR in complete magnetic saturation. We also conducted out-of-plane angle resolved measurements of the FMR resonance field. We observe splitting of the singlet observed for the perfect perpendicular-to-plane orientation of the applied field into a doublet upon a tilt of the field from this orientation. The splitting of the singlet into a doublet is explained as an experimental evidence of dipole coupling of the elements on the arrays. Our experimental observations are in good agreement with the theory we developed to describe the magnetization dynamics on this periodic array.

  17. Magnetic tunnel junctions using Co/Ni multilayer electrodes with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Lytvynenko, Ia.; Deranlot, C.; Andrieu, S.; Hauet, T.

    2015-02-01

    Magnetic and magneto-transport properties of amorphous Al2O3-based magnetic tunnel junctions (MTJ) having two Co/Ni multilayer electrodes exhibiting perpendicular magnetic anisotropy (PMA) are presented. An additional Co/Pt multilayer is required to maintain PMA in the top Co/Ni electrode. Slight stacking variations lead to dramatic magnetic changes due to dipolar interactions between the top and bottom electrodes. Tunnel magneto-resistance (TMR) of up to 8% at 300 K is measured for the MTJ with two PMA electrodes. The TMR value increases when the top PMA electrode is replaced by an in-plane magnetized Co layer. These observations can be attributed to significant intermixing in the top Co/Ni electrode.

  18. Control of magnetic domains in Co/Pd multilayered nanowires with perpendicular magnetic anisotropy.

    PubMed

    Noh, Su Jung; Miyamoto, Yasuyoshi; Okuda, Mitsunobu; Hayashi, Naoto; Kim, Young Keun

    2012-01-01

    Magnetic domain wall (DW) motion induced by spin transfer torque in magnetic nanowires is of emerging technological interest for its possible applications in spintronic memory or logic devices. Co/Pd multilayered magnetic nanowires with perpendicular magnetic anisotropy were fabricated on the surfaces of Si wafers by ion-beam sputtering. The nanowires had different sized widths and pinning sites formed by an anodic oxidation method via scanning probe microscopy (SPM) with an MFM tip. The magnetic domain structure was changed by an anodic oxidation method. To discover the current-induced DW motion in the Co/Pd nanowires, we employed micromagnetic modeling based on the Landau-Lifschitz-Gilbert (LLG) equation. The split DW motions and configurations due to the edge effects of pinning site and nanowire appeared.

  19. Fabrication of isolated CoGdTb magnetic nanodots with perpendicular magnetic anisotropy.

    PubMed

    Nam, Chunghee

    2013-03-01

    The authors report that a closely-packed hybrid nanostructure can be fabricated by using simple sputtering deposition and anodized aluminum oxide (AAO) templates. In order to isolate CoGdTb magnetic materials with the AAO template, carbon nanotubes (CNTs) were incorporated into the AAO template. Scanning electron microscopy reveals that the nanodots are formed exactly on the top of CNTs, which are placed in a regular arrangement over a wide range area. This indicates that magnetic nanodots, well-arranged over a large area, can be formed using simple sputtering deposition. Isothermal magnetization shows that the CoGdTb nanodots have perpendicular magnetic anisotropy and the strength of the dipolar interaction between the magnetic nanodots can be also controlled by adjusting the spacing between the dots.

  20. Magnetic domain imaging of nano-magnetic films using magnetic force microscopy with polar and longitudinally magnetized tips.

    PubMed

    Chen, Sy-Hann; Chang, Yu-Hsiang; Su, Chiung-Wu; Tsay, Jyh-Shen

    2016-10-01

    Perpendicular or parallel magnetic fields are used to magnetize the tips used in magnetic force microscopy (MFM). In this process, perpendicular or parallel magnetic dipole moments are produced on the tip plane, thus leading to the formation of polar magnetized tips (PM-tips) or longitudinally magnetized tips (LM-tips), respectively. The resolution of an MFM image of a magneto-optic disk is used for calibration of these tips, and the saturated magnetic fields of the PM- and LM-tips are found to be 2720 Oe and 680 Oe, respectively. Because both tips can simultaneously magnetize the sample during the scanning process when measuring a Co thin film, clear MFM images are captured, which enable the identification of magnetizable regions and the distribution of the magnetic domains on the sample surface. These results will be useful for improving the manufacturing processes required for soft nano-magnetic film production.

  1. Perpendicular magnetic anisotropy in granular multilayers of CoPd alloyed nanoparticles

    NASA Astrophysics Data System (ADS)

    Vivas, L. G.; Rubín, J.; Figueroa, A. I.; Bartolomé, F.; García, L. M.; Deranlot, C.; Petroff, F.; Ruiz, L.; González-Calbet, J. M.; Pascarelli, S.; Brookes, N. B.; Wilhelm, F.; Chorro, M.; Rogalev, A.; Bartolomé, J.

    2016-05-01

    Co-Pd multilayers obtained by Pd capping of pre-deposited Co nanoparticles on amorphous alumina are systematically studied by means of high-resolution transmission electron microscopy, x-ray diffraction, extended x-ray absorption fine structure, SQUID-based magnetometry, and x-ray magnetic circular dichroism. The films are formed by CoPd alloyed nanoparticles self-organized across the layers, with the interspace between the nanoparticles filled by the non-alloyed Pd metal. The nanoparticles show atomic arrangements compatible with short-range chemical order of L 10 strucure type. The collective magnetic behavior is that of ferromagnetically coupled particles with perpendicular magnetic anisotropy, irrespective of the amount of deposited Pd. For increasing temperature three magnetic phases are identified: hard ferromagnetic with strong coercive field, soft-ferromagnetic as in an amorphous asperomagnet, and superparamagnetic. Increasing the amount of Pd in the system leads to both magnetic hardness increment and higher transition temperatures. Magnetic total moments of 1.77(4) μB and 0.45(4) μB are found at Co and Pd sites, respectively, where the orbital moment of Co, 0.40(2) μB, is high, while that of Pd is negligible. The effective magnetic anisotropy is the largest in the capping metal series (Pd, Pt, W, Cu, Ag, Au), which is attributed to the interparticle interaction between de nanoparticles, in addition to the intraparticle anisotropy arising from hybridization between the 3 d -4 d bands associated to the Co and Pd chemical arrangement in a L 10 structure type.

  2. Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Yoshida, Chikako; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro; Tanaka, Tomohiro; Furuya, Atsushi; Uehara, Yuji

    2017-05-01

    The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ) has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P) to anti-parallel (AP) and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT) becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter.

  3. Effect of sputtering pressure on stacking fault density and perpendicular magnetic anisotropy of CoPt alloys

    NASA Astrophysics Data System (ADS)

    Park, Kyung-Woong; Oh, Young-Wan; Kim, Dae-Hoon; Kim, Jai-Young; Park, Byong-Guk

    2016-09-01

    We report the effects of Ar sputtering pressure on perpendicular magnetic anisotropy in disordered CoPt alloys via the modulation of stacking fault density. The coercivity and anisotropy field of CoPt alloys are gradually enlarged with an increase in Ar sputtering pressure from 3 mTorr to 30 mTorr. Structural analyses using transmission electron microscopy, atomic force microscopy and x-ray reflectivity show that the structural properties of the samples, such as roughness or grain size, are not significantly changed by variations in Ar sputtering pressure. On the other hand, in-plane x-ray diffraction measurements reveal that the stacking fault density is reduced in films grown under higher pressure, and instead favors HCP stacking. Our results suggest that perpendicular magnetic anisotropy in CoPt alloys can be enhanced by the growth of the sample under a high Ar sputtering pressure, which decreases stacking fault density.

  4. Thickness Dependent Magnetoelastic Effects and Perpendicular Magnetic Anisotropy in the Ta/CoFeB/MgO system

    NASA Astrophysics Data System (ADS)

    Stiehl, Gregory; Gowtham, Praveen; Ralph, Daniel; Buhrman, Robert

    2015-03-01

    We report the observation of strong thickness-dependent in-plane magnetoelastic coupling in Ta/CoFeB(x =0.7-2 nm)/MgO multilayers. Measurements are made using a four-point bend test strain fixture, revealing the emergence of large effective surface and volume magnetoelastic couplings after post-deposition annealing. When such surface and volume magnetoelastic interactions are included in the standard Neel model of surface anisotropy, they provide a natural explanation for the nonmonotonic Keffteff vs teff curves measured for CoFeB films in the thickness range that yields perpendicular magnetic anisotropy (PMA). The large magnitude of the magnetoelastic coupling terms suggest that enhanced control of thin film strains could be used to beneficially manipulate the PMA in CoFeB/MgO magnetic tunnel junctions and other thin film multilayer nanostructures.

  5. Magnetic interactions in CoCrPt-oxide based perpendicular magnetic recording media

    SciTech Connect

    Tan, H. K.; Varghese, B.; Piramanayagam, S. N.

    2014-10-28

    First order reversal curves (FORC) method has been reported to be an efficient tool to study interaction between grains and layers of magnetic materials. Although a few studies have been carried out on perpendicular recording media in the past, a study on the effect of systematic variation of exchange interaction in granular perpendicular magnetic recording media on FORC contours has not been carried out in detail. Such a study will help to understand the use of FORC better. In this paper, we have made a systematic set of samples in order to study the variation in exchange coupling and its effect on FORC contours. The pressure during the deposition of the second ruthenium layer and the magnetic layer was varied to alter the separation between the grains and hence the exchange interaction between the grains in the CoCrPt-oxide recording layer. In addition, the thickness of Co-alloy cap layer was used as an additional tool to control the exchange interaction between the magnetic grains. The results indicated that the interaction field obtained from the FORC does not vary in a significant manner when the changes in exchange interaction are small. In comparison, the peak intensity of the FORC shows a clear trend as the exchange coupling is varied, making it a more suitable parameter to study the exchange and magnetostatic interactions in systems such as magnetic recording media.

  6. Giant perpendicular magnetic anisotropy of an individual atom on two-dimensional transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Odkhuu, Dorj

    2016-08-01

    Exploring magnetism and magnetic anisotropy in otherwise nonmagnetic two-dimensional materials, such as graphene and transition metal dichalcogenides, is at the heart of spintronics research. Herein, using first-principles calculations we explore the possibility of reaching an atomic-scale perpendicular magnetic anisotropy by carefully exploring the large spin-orbit coupling, orbital magnetism, and ligand field in a suitable choice of a two-dimensional structure with transition metal adatoms. More specifically, we demonstrate perpendicular magnetic anisotropy energies up to an order of 100 meV per atom in individual ruthenium and osmium adatoms at a monosulfur vacancy in molybdenum disulfide. We further propose a phenomenological model where a spin state transition that involves hybridization between molybdenum a1 and adatomic e' orbitals is a possible mechanism for magnetization reversal from an in-plane to perpendicular orientation.

  7. Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

    NASA Astrophysics Data System (ADS)

    Dieny, B.; Chshiev, M.

    2017-04-01

    Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to the discovery of several physical phenomena (giant magnetoresistance, tunnel magnetoresistance, spin-transfer torque, spin-orbit torque, spin Hall effect, spin Seebeck effect, etc.), outstanding progress has been made on the growth and nanopatterning of magnetic multilayered films and nanostructures in which these phenomena are observed. Magnetic anisotropy is usually observed in materials that have large spin-orbit interactions. However, in 2002 perpendicular magnetic anisotropy (PMA) was discovered to exist at magnetic metal/oxide interfaces [for instance Co (Fe )/alumina ]. Surprisingly, this PMA is observed in systems where spin-orbit interactions are quite weak, but its amplitude is remarkably large—comparable to that measured at Co /Pt interfaces, a reference for large interfacial anisotropy (anisotropy˜1.4 erg /cm2=1.4 mJ /m2 ). Actually, this PMA was found to be very common at magnetic metal/oxide interfaces since it has been observed with a large variety of amorphous or crystalline oxides, including AlOx, MgO, TaOx, HfOx, etc. This PMA is thought to be the result of electronic hybridization between the oxygen and the magnetic transition metal orbit across the interface, a hypothesis supported by ab initio calculations. Interest in this phenomenon was sparked in 2010 when it was demonstrated that the PMA at magnetic transition metal/oxide interfaces could be used to build out-of-plane magnetized magnetic tunnel junctions for STT-MRAM cells. In these systems, the PMA at the CoFeB /MgO interface can be used to simultaneously obtain good memory retention, thanks to the large PMA amplitude, and a low write current

  8. Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Dieny, Bernard

    2014-08-01

    The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

  9. Non-Uniform Switching of the Perpendicular Magnetization in a Spin-Torque Magnetic Nanopillar

    SciTech Connect

    Bernstein, David

    2011-06-01

    Time-resolved scanning transmission x-ray microscopy (STXM) measurements were performed to study the current-induced magnetization switching mechanism in nanopillars exhibiting strong perpendicular magnetic anisotropy (PMA). This technique provides both short time (70 ps) and high spatial (25 nm) resolution. Direct imaging of the magnetization demonstrates that, after an incubation time of {approx} 1.3 ns, a 100 x 300 nm{sup 2} ellipsoidal device switches in {approx} 1 ns via a central domain nucleation and opposite propagation of two domain walls towards the edges. High domain wall velocities on the order of 100m/s are measured. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight into magnetization dynamics during the incubation and reversal period.

  10. Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Dieny, Bernard

    2014-08-04

    The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

  11. Time-dependent models of magnetic stars. IV - Perpendicular axes

    NASA Astrophysics Data System (ADS)

    Moss, David

    1987-05-01

    The evolution of large-scale initially axisymmetric fields immersed in middle main-sequence stellar models is followed in the case where the rotation axis and initial field axis are strictly perpendicular. The prediction that in this case the surface flux is never buried by the modified Eddington-Sweet circulation is verified, although mode-mixing may eventually reduce the strength of the dipolar field component. It appears that non-axisymmetric field components will grow over time-scales of 108yr or so. Effects of differing initial field geometries are discussed.

  12. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films

    SciTech Connect

    Toyoki, Kentaro; Shiratsuchi, Yu Kobane, Atsushi; Nakatani, Ryoichi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  13. Topcoat-Assisted Perpendicular and Straightly Parallel Coexisting Orientations of Block Copolymer Films.

    PubMed

    Jeong, Jiyoung; Ha, Jeong Sook; Lee, Sang-Soo; Son, Jeong Gon

    2015-07-01

    Highly ordered perpendicular orientation and straightly parallel orientation coexisting polystyrene-block-polydimethylsiloxane (PS-b-PDMS) cylindrical microdomains with 10 nm width can be realized by using polyvinyl acetate as a partially dewetted topcoat and solvent annealing with acetone vapor. During solvent annealing, the swelled topcoat begins to dewet and the dewetting rim sweeps the surface of the block copolymer films to align the cylindrical microdomains with the direction of dewetting propagation. However, the wetted region of the topcoat/PS-b-PDMS film forms with a perpendicular orientation due to reduced surface tension and sufficient concentration gradient in the solvent evaporation step. The orientational changes (perpendicular/straightly parallel orientation) in the dewetted/wetted area are also investigated according to the vapor pressure of solvent annealing. The degree of directionality of the swept PS-b-PDMS films according to the distance from the dewetting front, which is equivalent with time after sweeping, is examined. To control the direction of dewetting and complex structures within a specific area, an imprinting process is introduced to form topographical line-space patterns in the topcoat and perpendicular/parallel orientation of BCP patterns in the line-space patterns, respectively.

  14. Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization.

    PubMed

    Chiba, D; Kawaguchi, M; Fukami, S; Ishiwata, N; Shimamura, K; Kobayashi, K; Ono, T

    2012-06-06

    Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.

  15. In Situ TEM Scratch Testing of Perpendicular Magnetic Recording Multilayers with a Novel MEMS Tribometer

    NASA Astrophysics Data System (ADS)

    Hintsala, Eric D.; Stauffer, Douglas D.; Oh, Yunje; Asif, S. A. Syed

    2017-01-01

    Utilizing a newly developed two-dimensional (2D) transducer designed for in situ transmission electron microscope (TEM) nanotribology, deformation mechanisms of a perpendicular magnetic recording film stack under scratch loading conditions were evaluated. These types of films are widely utilized in storage devices, and loss of data by grain reorientation in the recording layers is of interest. The observed deformation was characterized by a stick-slip mechanism, which was induced by a critical ratio of lateral to normal force regardless of normal force. At low applied normal forces, the diamond-like carbon (DLC) coating and asperities in the recording layer were removed during scratching, while, at higher applied forces, grain reorientation and debonding of the recording layer was observed. As the normal force and displacement were increased, work for stick-slip deformation and contact stress were found to increase based upon an Archard's Law analysis. These experiments also served as an initial case study demonstrating the capabilities of this new transducer.

  16. Enhanced ferromagnetic resonance linewidth of the free layer in perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Gopman, D. B.; Dennis, C. L.; McMichael, R. D.; Hao, X.; Wang, Z.; Wang, X.; Gan, H.; Zhou, Y.; Zhang, J.; Huai, Y.

    2017-05-01

    We report the frequency dependence of the ferromagnetic resonance linewidth of the free layer in magnetic tunnel junctions with all perpendicular-to-the-plane magnetized layers. While the magnetic-field-swept linewidth nominally shows a linear growth with frequency in agreement with Gilbert damping, an additional frequency-dependent linewidth broadening occurs that shows a strong asymmetry between the absorption spectra for increasing and decreasing external magnetic field. Inhomogeneous magnetic fields produced during reversal of the reference and pinned layer complex is demonstrated to be at the origin of the symmetry breaking and the linewidth enhancement. Consequentially, this linewidth enhancement provides indirect information on the magnetic coercivity of the reference and pinned layers. These results have important implications for the characterization of perpendicular magnetized magnetic random access memory bit cells.

  17. Multi-layer magnetism and thermal stability in perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Singh, Amritpal

    Thermal stability is one of the critical issues for applications of nano-magnets for spin-logic applications. Our work is focused on the thermal stability in perpendicular magnetic tunnel junctions (p-MTJs) for MRAM and STT-RAM purposes. Most of the research so far has been focused on p-MTJs based on CoFeB/MgO interfacial anisotropy as the sandwich structures with bcc ferromagnetic electrodes and MgO spacer have large magnetoresistance. It has been demonstrated that this interfacial anisotropy by itself is not sufficient to reduce the p-MTJ diameter down to 20 nm. To overcome this problem, we have proposed and investigated hard-soft composite structures: [Co/Pt multilayers]/ (non-magnetic element) /CoFeB/MgO, to control the perpendicular magnetic anisotropy (PMA) of the CoFeB soft layer by exchange coupling with Co/Pt multilayers having bulk anisotropy. Ta has been studied as the first non-magnetic insertion element, since it helps in crystallization of CoFeB by absorbing the B. The other elements studied as insertions are V and Zr, since they have low damping constants. A micromagnetic model has been set up on the basis of experimental results and ab-initio calculations to study the effect of insertion thickness and damping parameter on switching current density and switching time. To understand the mechanism of CoFeB/MgO interfacial anisotropy, low temperature scaling of interface anisotropy (Ks(T)) and saturation magnetization (M s(T)) is measured, since at low temperature (T), Ks(T) vs Ms(T) scaling is sensitive to the details of the anisotropy mechanism. For the first time, we experimentally show that for CoFeB/MgO, Ks(T) scales as Ms(T) 2.2, hence indicating the two-ion type anisotropy as the dominant mechanism.

  18. Magnetic domains in Ni Mn Ga martensitic thin films

    NASA Astrophysics Data System (ADS)

    Chernenko, V. A.; Lopez Anton, R.; Kohl, M.; Ohtsuka, M.; Orue, I.; Barandiaran, J. M.

    2005-08-01

    A series of martensitic Ni52Mn24Ga24 thin films deposited on alumina ceramic substrates has been prepared by using RF (radio-frequency) magnetron sputtering. The film thickness, d, varies from 0.1 to 5.0 µm. Magnetic domain patterns have been imaged by the MFM (magnetic force microscopy) technique. A maze domain structure is found for all studied films. MFM shows a large out-of-plane magnetization component and a rather uniform domain width for each film thickness. The domain width, δ, depends on the film thickness as \\delta \\sim \\sqrt {d} in the whole studied range of film thickness. This dependence is the expected one for magnetic anisotropy and magnetostatic contributions in a perpendicular magnetic domain configuration. The proportionality coefficient is also consistent with the values of saturation magnetization and magnetic anisotropy determined in the samples.

  19. Accelerated ions from pulsed-power-driven fast plasma flow in perpendicular magnetic field

    SciTech Connect

    Takezaki, Taichi Takahashi, Kazumasa; Sasaki, Toru Harada, Nob.; Kikuchi, Takashi

    2016-06-15

    To understand the interaction between fast plasma flow and perpendicular magnetic field, we have investigated the behavior of a one-dimensional fast plasma flow in a perpendicular magnetic field by a laboratory-scale experiment using a pulsed-power discharge. The velocity of the plasma flow generated by a tapered cone plasma focus device is about 30 km/s, and the magnetic Reynolds number is estimated to be 8.8. After flow through the perpendicular magnetic field, the accelerated ions are measured by an ion collector. To clarify the behavior of the accelerated ions and the electromagnetic fields, numerical simulations based on an electromagnetic hybrid particle-in-cell method have been carried out. The results show that the behavior of the accelerated ions corresponds qualitatively to the experimental results. Faster ions in the plasma flow are accelerated by the induced electromagnetic fields modulated with the plasma flow.

  20. Electric field modulation of magnetic anisotropy in perpendicularly magnetized Pt/Co structure with a Pd top layer

    NASA Astrophysics Data System (ADS)

    Hibino, Yuki; Koyama, Tomohiro; Obinata, Aya; Miwa, Kazumoto; Ono, Shimpei; Chiba, Daichi

    2015-11-01

    We investigated the electric field effect on magnetic anisotropy in a perpendicularly magnetized Pt/Co system with a top ultrathin layer of nonmagnetic Pd. By applying an electric field to the surface of the ferromagnetic Pd layer, we observed a clear modulation of the perpendicular magnetic anisotropy of the system. This result shows that the magnetic anisotropy can be modulated by an electric field even when nonmagnetic Pd is inserted at the interface formed by the magnetic layer and insulator. The electric field effect of the proximity-induced moment in Pd might contribute to the anisotropy modulation.

  1. Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Feng, G.; Wu, H. C.; Feng, J. F.; Coey, J. M. D.

    2011-07-01

    We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature dependence of two (Co/Pt)3 stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlOx barrier.

  2. Phosphor doping enhanced c-axis alignment and exchange decoupling of sputtered Co-Pt perpendicular thin films

    SciTech Connect

    Yang, Bo; Qin, Gaowu Xiao, Na; Li, Zongbin; Zhao, Xiang; Zuo, Liang; Zhang, Yudong; Esling, Claude

    2016-04-14

    In the present work, Co-23.0 at. % Pt and Co-23.0 at. % Pt-3.67 at. % P thin films with their c-axis perpendicular to the substrate surface were fabricated on a glass substrate by DC magnetron sputtering. X-ray diffraction and transmission electron microscopic analyses demonstrate that the doping of P improves the c-axis alignment and forms P-rich non-magnetic phase at grain boundary areas, the latter resulting in inter-granular exchange decoupling between Co-Pt grains. The improved c-axis alignment and the inter-granular exchange decoupling give rise to the increase of the out of plane coercivity and the squareness of the Co-Pt-P films.

  3. Fragmentation of a Filamentary Cloud Permeated by a Perpendicular Magnetic Field

    NASA Astrophysics Data System (ADS)

    Hanawa, Tomoyuki; Kudoh, Takahiro; Tomisaka, Kohji

    2017-10-01

    We examine the linear stability of an isothermal filamentary cloud permeated by a perpendicular magnetic field. Our model cloud is assumed to be supported by gas pressure against self-gravity in the unperturbed state. For simplicity, the density distribution is assumed to be symmetric around the axis. Also for simplicity, the initial magnetic field is assumed to be uniform, and turbulence is not taken into account. The perturbation equation is formulated to be an eigenvalue problem. The growth rate is obtained as a function of the wavenumber for fragmentation along the axis and the magnetic field strength. The growth rate depends critically on the outer boundary. If the displacement vanishes in regions very far from the cloud axis (fixed boundary), cloud fragmentation is suppressed by a moderate magnetic field, which means the plasma beta is below 1.67 on the cloud axis. If the displacement is constant along the magnetic field in regions very far from the cloud, the cloud is unstable even when the magnetic field is infinitely strong. The cloud is deformed by circulation in the plane perpendicular to the magnetic field. The unstable mode is not likely to induce dynamical collapse, since it is excited even when the whole cloud is magnetically subcritical. For both boundary conditions, the magnetic field increases the wavelength of the most unstable mode. We find that the magnetic force suppresses compression perpendicular to the magnetic field especially in regions of low density.

  4. Large enhancement of perpendicular magnetic anisotropy and high annealing stability by Pt insertion layer in (Co/Ni)-based multilayers

    NASA Astrophysics Data System (ADS)

    Chen, Xi; Li, Minghua; Yang, Kang; Jiang, Shaolong; Han, Gang; Liu, Qianqian; Yu, Guanghua

    2015-09-01

    We have investigated the influence of ultrathin Pt insertion layers on the perpendicular magnetic anisotropy (PMA) and annealing stability of Ta/Pt/(Co/Ni)×3/Co/Pt/Ta multilayered films. When the Pt layers were inserted at the Co/Ni interfaces, the PMA of the multilayered films decreased monotonically as the thickness of the Pt insertion layer (tPt) was increased. However, when the Pt layers were inserted at the Ni/Co interfaces, the PMA increased from 1.39 × 106 to 3.5 × 106 erg/cm3 as tPt increased from 0 to 10 Å. Moreover, the multilayered film containing 6-Å-thick Pt insertion layers that inserted at the Ni/Co interfaces exhibited the highest annealing stability for PMA, which was up to temperature of 480 °C. We hypothesize that the introduced Pt/Co interfaces, due to the Pt insertion layers, are responsible for the enhanced PMA and high annealing stability. This study is particularly important for perpendicularly magnetized spintronic devices that require high PMA and high annealing stability.

  5. Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

    NASA Astrophysics Data System (ADS)

    Natarajarathinam, Anusha

    Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

  6. Domain configurations in Co/Pd and L10-FePt nanowire arrays with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ho, Pin; Tu, Kun-Hua; Zhang, Jinshuo; Sun, Congli; Chen, Jingsheng; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Voyles, Paul M.; Ross, Caroline A.

    2016-02-01

    Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Néel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ~75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the domains along the nanowires. These narrow wires provide model system for exploring domain wall structure and dynamics in perpendicular anisotropy systems.Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Néel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ~75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the

  7. Nonmonotonic effects of perpendicular magnetic anisotropy on current-driven vortex wall motions in magnetic nanostripes

    NASA Astrophysics Data System (ADS)

    Su, Yuan-Chang; Lei, Hai-Yang; Hu, Jing-Guo

    2015-09-01

    In a magnetic nanostripe, the effects of perpendicular magnetic anisotropy (PMA) on the current-driven horizontal motion of vortex wall along the stripe and the vertical motion of the vortex core are studied by micromagnetic simulations. The results show that the horizontal and vertical motion can generally be monotonously enhanced by PMA. However, when the current is small, a nonmonotonic phenomenon for the horizontal motion is found. Namely, the velocity of the horizontal motion firstly decreases and then increases with the increase of the PMA. We find that the reason for this is that the PMA can firstly increase and then decrease the confining force induced by the confining potential energy. In addition, the PMA always enhances the driving force induced by the current. Project supported by the National Natural Science Foundation of China (Grant Nos. 11247026 and 11374253).

  8. Amplification of perpendicular and parallel magnetic fields by cosmic ray currents

    NASA Astrophysics Data System (ADS)

    Matthews, J. H.; Bell, A. R.; Blundell, K. M.; Araudo, A. T.

    2017-08-01

    Cosmic ray (CR) currents through magnetized plasma drive strong instabilities producing amplification of the magnetic field. This amplification helps explain the CR energy spectrum as well as observations of supernova remnants and radio galaxy hotspots. Using magnetohydrodynamic simulations, we study the behaviour of the non-resonant hybrid (NRH) instability (also known as the Bell instability) in the case of CR currents perpendicular and parallel to the initial magnetic field. We demonstrate that extending simulations of the perpendicular case to 3D reveals a different character to the turbulence from that observed in 2D. Despite these differences, in 3D the perpendicular NRH instability still grows exponentially far into the non-linear regime with a similar growth rate to both the 2D perpendicular and 3D parallel situations. We introduce some simple analytical models to elucidate the physical behaviour, using them to demonstrate that the transition to the non-linear regime is governed by the growth of thermal pressure inside dense filaments at the edges of the expanding loops. We discuss our results in the context of supernova remnants and jets in radio galaxies. Our work shows that the NRH instability can amplify magnetic fields to many times their initial value in parallel and perpendicular shocks.

  9. Experimental evidence of skyrmion-like configurations in bilayer nanodisks with perpendicular magnetic anisotropy

    SciTech Connect

    Stebliy, Maxim E. Kolesnikov, Alexander G.; Davydenko, Alexander V.; Ognev, Alexey V.; Samardak, Alexander S.; Chebotkevich, Ludmila A.

    2015-05-07

    Formation and existence of magnetic skyrmion-like configurations in bilayer nanodisks (Ta(3 nm)/[Co(0.37 nm)/Ni(0.58 nm)]{sub 10}){sub 2} with perpendicular magnetic anisotropy are shown experimentally at room temperature. Magnetization reversal through the skyrmion state is studied using magnetic hysteresis measurements. An evolution of skyrmion configurations in the nanodisk structure is analyzed. Experimental methods and micromagnetic simulations help to understand the magnetization reversal processes occurring through the stable skyrmion-like configurations. Formation of the intermediate C-states during magnetization reversal is demonstrated. The skyrmion number for all possible spin configurations is calculated.

  10. Characteristics of magnetic force microscopy magnetics on high moment perpendicular magnetic recording writers with high coercivity probes

    NASA Astrophysics Data System (ADS)

    Liu, Feng; Li, Shaoping; Bai, Daniel; Wang, James; Li, Zhanjie; Han, Dehua; Pan, Tao; Mao, Sining

    2012-04-01

    High resolution magnetic force microscopy (MFM) imaging with high coercivity probes on perpendicular magnetic recording (PMR) writers directly characterizes magnetic field contour for the writer main pole as well as its shields' magnetic state. Evolution of write bubble and return field was analyzed by MFM imaging in dynamic phase detection scheme. Different write field components and their out of plane second order derivatives were calculated via finite element modeling. The MFM imaged write field distribution correlates well with the PMR writer out of plane write field component. Magnetic responses of the PMR writer main pole, trailing and side shields are quantified. The trailing and side shields exhibit complicated magnetic saturation behaviors comparing with the PMR writer pole. The side shield's magnetic response is dependent upon its initial equilibrium state.

  11. Engineering spin-orbit torque in Co/Pt multilayers with perpendicular magnetic anisotropy

    SciTech Connect

    Huang, Kuo-Feng; Wang, Ding-Shuo; Lai, Chih-Huang; Lin, Hsiu-Hau

    2015-12-07

    To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global imbalance of the spin currents from the top and bottom interfaces for each Co layer. By inserting Ta or Cu layers to strengthen the top-down asymmetry, the spin-orbit torque efficiency can be greatly modified without compromised perpendicular magnetic anisotropy. Above all, the efficiency builds up as the number of layers increases, realizing robust thermal stability and high spin-orbit-torque efficiency simultaneously in the multilayers structure.

  12. Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Tao, B. S.; Li, D. L.; Yuan, Z. H.; Liu, H. F.; Ali, S. S.; Feng, J. F.; Wei, H. X.; Han, X. F.; Liu, Y.; Zhao, Y. G.; Zhang, Q.; Guo, Z. B.; Zhang, X. X.

    2014-09-01

    Magnetic properties of Co40Fe40B20 (CoFeB) thin films sandwiched between Ta and MgAl2O4 layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4 structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki = 1.22 erg/cm2, which further increases to 1.30 erg/cm2 after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0 nm, while that for top CoFeB layer is between 0.8 and 1.4 nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

  13. Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization

    NASA Astrophysics Data System (ADS)

    Shiota, Yoichi; Nozaki, Takayuki; Tamaru, Shingo; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige

    2016-01-01

    We investigated the write error rate (WER) for voltage-driven dynamic switching in magnetic tunnel junctions with perpendicular magnetization. We observed a clear oscillatory behavior of the switching probability with respect to the duration of pulse voltage, which reveals the precessional motion of magnetization during voltage application. We experimentally demonstrated WER as low as 4 × 10-3 at the pulse duration corresponding to a half precession period (˜1 ns). The comparison between the results of the experiment and simulation based on a macrospin model shows a possibility of ultralow WER (<10-15) under optimum conditions. This study provides a guideline for developing practical voltage-driven spintronic devices.

  14. Quenching and temperature dependence of perpendicular magnetic anisotropy of Pt/Co multilayers

    NASA Astrophysics Data System (ADS)

    Xu, Yonggang; Zhao, Xiaolin; Lv, Meng; Yu, Guolin; Dai, Ning; Chu, Junhao

    2015-04-01

    Magnetic metallic multilayers separated by nonmagnetic metal films are of great importance in magnetoelectronics and spintronics, due to their capacity of giving rise to giant magneto-resistance as well as the electric field control of ferromagnetism. Co/Pt multilayers are one of the typical platforms that own perpendicular magnetic anisotropy which can be tuned in various ways. Since previous investigations focus on the anomalous Hall(transverse) resistivity which characterizes the magnetization of the multilayers, much less attention has been paid to the longitudinal resistivity. In this work, we find that the longitudinal resistivity also gives rich phenomena that need further theoretical treatment. We have grown two Co/Pt multilayer structures that have different spacings between neighboring ferromagnetic layers. The one with smaller spacing shows a superparamagnetic behavior in its Hall resistivity even at a temperature as low as 1.5 K, but the longitudinal resistivity shows a well established hysteresis. The other sample shows square hysteresis in the Hall resistivity at all available temperatures up to 300 K, while the longitudinal resistivity gives no significant signals because they are mostly engulfed in the noises. The corresponding temperature dependence of the coercive field are also different. While the former gives an approximately exponential function of the temperature T, the latter can be divided to two zones, each of which can be characterized by a lnTs dependence, where s is not necessarily an integer. Such distinct features may be deeply related to the microstructures as well as the magnon scattering, which require further investigations.

  15. Magnetic skyrmions without the skyrmion Hall effect in a magnetic nanotrack with perpendicular anisotropy.

    PubMed

    Zhang, Yue; Luo, Shijiang; Yan, Baiqian; Ou-Yang, Jun; Yang, Xiaofei; Chen, Shi; Zhu, Benpeng; You, Long

    2017-07-27

    Magnetic skyrmions have potential applications in novel information devices with excellent energy efficiency. However, the skyrmion Hall effect (SkHE) could cause skyrmions moving in a nanotrack to get annihilated at the track edge. In this work, we discovered that the SkHE is depressed by modifying the magnetic structure at the edge of a track, and thus the skyrmion can move in almost a straight line at a high speed. Unlike the inner part of a track with perpendicular magnetic anisotropy, the edge layer exhibits in-plane magnetic anisotropy, and the orientation of edge moments is opposite that at the perimeter of skyrmions nearby. As a result, an enhanced repulsive force acts on the skyrmion to oppose the Magnus force that causes the SkHE. Additionally, the Dzyaloshinskii-Moriya interaction (DMI) constant of the edge layer also matters. When there is no DMI at the edge layer, the transverse displacement of the skyrmion can be depressed effectively when the width of the edge layer is sufficiently large. However, when the inner part and the edge share the same DMI constant, non-monotonically varied transverse displacement occurs because of the Néel-wall-like structure at the edge layer.

  16. Magnetic domain patterns on strong perpendicular magnetization of Co/Ni multilayers as spintronics materials: I. Dynamic observations.

    PubMed

    Suzuki, Masahiko; Kudo, Kazue; Kojima, Kazuki; Yasue, Tsuneo; Akutsu, Noriko; Diño, Wilson Agerico; Kasai, Hideaki; Bauer, Ernst; Koshikawa, Takanori

    2013-10-09

    Materials with perpendicular magnetic anisotropy can reduce the threshold current density of the current-induced domain wall motion. Co/Ni multilayers show strong perpendicular magnetic anisotropy and therefore it has become a highly potential candidate of current-induced domain wall motion memories. However, the details of the mechanism which stabilizes the strong perpendicular magnetization in Co/Ni multilayers have not yet been understood. In the present work, the evolution of the magnetic domain structure of multilayers consisting of pairs of 2 or 3 monolayers (ML) of Ni and 1 ML of Co on W(110) was investigated during growth with spin-polarized low-energy electron microscopy. An interesting phenomenon, that the magnetic domain structure changed drastically during growth, was revealed. In the early stages of the growth the magnetization alternated between in-plane upon Co deposition and out-of-plane upon Ni deposition. The change of the magnetization direction occurred within a range of less than 0.2 ML during Ni or Co deposition, with break-up of the existing domains followed by growth of new domains. The Ni and Co thickness at which the magnetization direction switched shifted gradually with the number of Co/Ni pairs. Above 3-4 Co/Ni pairs it stayed out-of-plane. The results indicate clearly that the Co-Ni interfaces play the important role of enhancing the perpendicular magnetic anisotropy.

  17. The mechanical response in a fluid of synthetic antiferromagnetic and ferrimagnetic microdiscs with perpendicular magnetic anisotropy.

    PubMed

    Vemulkar, T; Welbourne, E N; Mansell, R; Petit, D C M C; Cowburn, R P

    2017-01-23

    In this article, we demonstrate the magneto-mechanic behavior in a fluid environment of perpendicularly magnetized microdiscs with antiferromagnetic interlayer coupling. When suspended in a fluid and under the influence of a simple uniaxial applied magnetic field sequence, the microdiscs mechanically rotate to access the magnetic saturation processes that are either that of the easy axis, hard axis, or in-between the two, in order to lower their energy. Further, these transitions enable the magnetic particles to form reconfigurable magnetic chains, and transduce torque from uniaxial applied fields. These microdiscs offer an attractive platform for the fabrication of fluid based micro- and nanodevices, and dynamically self assembled complex architectures.

  18. The mechanical response in a fluid of synthetic antiferromagnetic and ferrimagnetic microdiscs with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Vemulkar, T.; Welbourne, E. N.; Mansell, R.; Petit, D. C. M. C.; Cowburn, R. P.

    2017-01-01

    In this article, we demonstrate the magneto-mechanic behavior in a fluid environment of perpendicularly magnetized microdiscs with antiferromagnetic interlayer coupling. When suspended in a fluid and under the influence of a simple uniaxial applied magnetic field sequence, the microdiscs mechanically rotate to access the magnetic saturation processes that are either that of the easy axis, hard axis, or in-between the two, in order to lower their energy. Further, these transitions enable the magnetic particles to form reconfigurable magnetic chains, and transduce torque from uniaxial applied fields. These microdiscs offer an attractive platform for the fabrication of fluid based micro- and nanodevices, and dynamically self assembled complex architectures.

  19. The mechanical response in a fluid of synthetic antiferromagnetic and ferrimagnetic microdiscs with perpendicular magnetic anisotropy

    PubMed Central

    Vemulkar, T.; Welbourne, E. N.; Petit, D. C. M. C.; Cowburn, R. P.

    2017-01-01

    In this article, we demonstrate the magneto-mechanic behavior in a fluid environment of perpendicularly magnetized microdiscs with antiferromagnetic interlayer coupling. When suspended in a fluid and under the influence of a simple uniaxial applied magnetic field sequence, the microdiscs mechanically rotate to access the magnetic saturation processes that are either that of the easy axis, hard axis, or in-between the two, in order to lower their energy. Further, these transitions enable the magnetic particles to form reconfigurable magnetic chains, and transduce torque from uniaxial applied fields. These microdiscs offer an attractive platform for the fabrication of fluid based micro- and nanodevices, and dynamically self assembled complex architectures. PMID:28190886

  20. Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field

    NASA Astrophysics Data System (ADS)

    Drobitch, Justine L.; Ahsanul Abeed, Md; Bandyopadhyay, Supriyo

    2017-10-01

    We describe an approach to implement precessional switching of a perpendicular-magnetic-anisotropy magneto-tunneling-junction (p-MTJ) without using any magnetic field. The switching is accomplished with voltage-controlled-magnetic-anisotropy (VCMA), spin transfer torque (STT) and mechanical strain. The soft layer of the p-MTJ is magnetostrictive and the strain acts as an effective in-plane magnetic field around which the magnetization of the soft layer precesses to complete a flip. A two-terminal energy-efficient p-MTJ based memory cell, that is compatible with crossbar architecture and high cell density, is designed.

  1. Perpendicular magnetic anisotropy and magneto-optical Kerr effect of vapor-deposited Co/Pt-layered structures

    NASA Astrophysics Data System (ADS)

    Zeper, W. B.; Greidanus, F. J. A. M.; Carcia, P. F.; Fincher, C. R.

    1989-06-01

    We prepared by vapor deposition at room temperature thin (500 Å) Co/Pt multilayers or layered structures directly onto glass or Si substrates. They show a preferential magnetization perpendicular to the film plane for Co thicknesses below 12 Å and a 100% perpendicular remanence for Co thicknesses below 4.5 Å. The magnetic anisotropy can be explained by an interface contribution to the anisotropy. We also investigated the magneto-optical (MO) polar Kerr effect of these multilayers. Because of their excellent magnetic properties and their potentially high oxidation and corrosion resistance, these Co/Pt-layered structures are very promising candidates for MO recording. The Kerr rotation θk at λ=820 nm for a 35×(4.0 Å Co+12.7 Å Pt)-layered structure, which has 100% magnetic remanence, is modest (-0.12°), but the reflectivity R is high (70%), which results in a respectable figure of merit Rθ2k. Furthermore, the Kerr effect increases towards shorter wavelengths and thus favors future higher-density recording.

  2. Structural, magnetic, and magneto-optical properties of nanocrystalline face centered cubic Co70Cr30/Pt multilayers with perpendicular magnetic anisotropy.

    PubMed

    Papaioannou, E Th; Angelakeris, M; Poulopoulos, P; Tsiaoussis, I; Rüdt, C; Fumagalli, P; Flevaris, N K

    2007-12-01

    Co70Cr30 alloyed layers are combined with extremely thin Pt layers in order to produce novel face-centered-cubic multilayered films to be considered as a potential perpendicular magnetic recording medium. The films were grown on Si, glass and polyimide substrates by e-beam evaporation at a temperature slightly higher than room temperature. The multilayered structure of the films was verified by X-ray diffraction experiments. Plane-view transmission electron microscopy images have revealed the formation of very small grains in the range of 7-9 nm. Hysteresis loops as a function of temperature were recorded via the magneto-optic Kerr effect in the polar geometry configuration. The system exhibits perpendicular magnetic anisotropy, which enhances with decreasing temperature. Hysteresis loops with a squareness of 1 and a coercivity of 1.45 kOe were obtained at 10 K. Furthermore, complete magneto-optic spectra of the films are recorded, showing a strong magneto-optic enhancement in the ultraviolet region at around 4.5 eV.

  3. Domain configurations in Co/Pd and L10-FePt nanowire arrays with perpendicular magnetic anisotropy.

    PubMed

    Ho, Pin; Tu, Kun-Hua; Zhang, Jinshuo; Sun, Congli; Chen, Jingsheng; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Voyles, Paul M; Ross, Caroline A

    2016-03-07

    Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Néel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ∼75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the domains along the nanowires. These narrow wires provide model system for exploring domain wall structure and dynamics in perpendicular anisotropy systems.

  4. Flux trapping in superconducting thin films in weak magnetic fields

    NASA Astrophysics Data System (ADS)

    Geng, Q.; Goto, E.

    1993-11-01

    Magnetic-field distribution measurements over a patterned superconducting strip line sample were conducted using a superconducting quantum interference device pickup coil, showing that, in the range of 500 μG-50 mG of perpendicular magnetic field B⊥,i, the superconducting films record previous magnetic histories precisely. The magnetic-field distribution with a field B⊥,i applied at all times is identical to one with no field applied at any time. A calculation based on the flux trapping model explains these results indicating that all the magnetic fluxes penetrate the superconducting thin films.

  5. Influence of magnetic field and mechanical scratch on the recorded magnetization stability of longitudinal and perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Nagano, Katsumasa; Tobari, Kousuke; Futamoto, Masaaki

    The influences of magnetic field and mechanical scratch on the magnetization structural stability are investigated for longitudinal (LMR) and perpendicular (PMR) recording media by using a magnetic force microscope. For both media, the magnetization structure started to change at lower magnetic fields in the areas near and below mechanical scratches when compared with normal areas with no scratches. For PMR samples, the magnetization stability of recorded bits near and below mechanical scratches is enhanced with increasing the area density. The recorded magnetization stability decreases near and below mechanical scratches depending delicately on the depth and the width for both types of media.

  6. Magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer for wide-dynamic-range magnetic sensors

    NASA Astrophysics Data System (ADS)

    Nakano, T.; Oogane, M.; Furuichi, T.; Ando, Y.

    2017-01-01

    We developed CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with a perpendicularly magnetized synthetic antiferromagnetic (p-SAF) reference layer for magnetic sensor applications. The MTJs exhibited linear tunnel magnetoresistance curves to out-of-plane applied magnetic fields with dynamic ranges more than ±2.5 kOe, which are wider than those in CoFeB/MgO/CoFeB-MTJs reported to date. The performance metrics of MTJ sensors, i.e., sensitivity and nonlinearity, depend significantly on the anisotropy field of the free layer. We explained the dependences by a simple model based on the Stoner-Wohlfarth and Slonczewski models, which gives us a guideline to design the sensor performance metrics. These findings demonstrated that MTJs with a p-SAF reference layer are promising candidates for wide-dynamic-range magnetic sensors.

  7. Exchange-biased spin valves with perpendicular magnetic anisotropy based on (Co/Pt) multilayers

    NASA Astrophysics Data System (ADS)

    Garcia, F.; Fettar, F.; Auffret, S.; Rodmacq, B.; Dieny, B.

    2003-05-01

    We have prepared spin valves exhibiting perpendicular magnetic anisotropy [perpendicular spin valves (PSVs)] by sputtering. These PSVs associate a "free" (Co/Pt) multilayer with a "pinned" (Co/Pt)/FeMn multilayer separated by various spacer materials (Pt, Cu, Al2O3). We carried out a comprehensive study of the magnetic and magnetotransport properties of the biased multilayers and of the complete spin valves. When the number of repeats in the (Co/Pt) exchange-biased multilayer is larger than 3, the samples present 100% remnant magnetization in the perpendicular configuration. The major hysteresis cycles exhibit two well-separated loops associated with the free and the exchange-biased (Pt/Co) multilayers. When optimized, the exchange-bias field can be larger than the coercivity of the pinned layer. Metallic PSVs with Cu spacers exhibit giant magnetoresistance but the amplitude is only of the order of 1% due to significant current shunting. In contrast, perpendicularly magnetized tunnel junctions are very promising.

  8. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Ikeda, S.; Miura, K.; Yamamoto, H.; Mizunuma, K.; Gan, H. D.; Endo, M.; Kanai, S.; Hayakawa, J.; Matsukura, F.; Ohno, H.

    2010-09-01

    Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L10-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40nm diameter and a low switching current of 49μA.

  9. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.

    PubMed

    Ikeda, S; Miura, K; Yamamoto, H; Mizunuma, K; Gan, H D; Endo, M; Kanai, S; Hayakawa, J; Matsukura, F; Ohno, H

    2010-09-01

    Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloys, L1(0)-ordered (Co, Fe)-Pt alloys and Co/(Pd, Pt) multilayers. However, none of them so far satisfy high thermal stability at reduced dimension, low-current current-induced magnetization switching and high tunnel magnetoresistance ratio all at the same time. Here, we use interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane anisotropy. This approach requires no material other than those used in conventional in-plane-anisotropy MTJs. The perpendicular MTJs consisting of Ta/CoFeB/MgO/CoFeB/Ta show a high tunnel magnetoresistance ratio, over 120%, high thermal stability at dimension as low as 40 nm diameter and a low switching current of 49 microA.

  10. Ferromagnetic resonance measurements of (Co/Ni/Co/Pt) multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Sbiaa, R.; Shaw, J. M.; Nembach, H. T.; Bahri, M. Al; Ranjbar, M.; Åkerman, J.; Piramanayagam, S. N.

    2016-10-01

    Multilayers of [Co/Ni(t)/Co/Pt]×8 with varying Ni thickness were investigated for possible use as a free layer in magnetic tunnel junctions and spintronics devices. The thickness t of the Ni sub-layer was varied from 0.3 nm to 0.9 nm and the resulting magnetic properties were compared with (Co/Ni) and (Co/Pt) multilayers. As determined from magnetic force microscopy, magnetometry and ferromagnetic resonance measurements, all multilayers exhibited perpendicular magnetic anisotropy. Compared with (Co/Pt) multilayers, the sample with t of 0.9 nm showed almost the same anisotropy field of μ 0 H k   =  1.15 T but the damping constant was 40% lower. These characteristics make these multilayers attractive for spin torque based magnetoresistive devices with perpendicular anisotropy.

  11. Wave packet revivals in a graphene quantum dot in a perpendicular magnetic field

    SciTech Connect

    Torres, J. J.

    2010-10-15

    We study the time evolution of localized wave packets in graphene quantum dots in a perpendicular magnetic field, focusing on the quasiclassical and revival periodicities, for different values of the magnetic field intensities in a theoretical framework. We have considered contributions of the two inequivalent points in the Brillouin zone. The revival time has been found as an observable that shows the break valley degeneracy.

  12. Microstructures and magnetic anisotropy of single-layered Fe-Pt alloy films by in-situ annealing.

    PubMed

    Sun, Ta-Huang; Chen, Sheng-Chi; Lin, Yu-Chin; Ou, Sin-Liang; Chen, Jiann-Ruey

    2012-02-01

    The single-layered Fe-Pt films with thickness of 30 nm are in-situ deposited directly on Si substrate at various substrate temperatures (Ts) of 350 to 590 degrees C. As the Fe-Pt film is sputtered at substrate temperature is 350 degrees C, it shows (111) preferred orientation and tends to in-plane magnetic anisotropy. The L1(0) Fe-Pt film with (001) texture is obtained and exhibited perpendicular magnetic anisotropy as the substrate temperature is increased to 470 degrees C. The perpendicular coercivity (Hc perpendicular), saturation magnetization (Ms) and perpendicular squareness (S perpendicular) of this film are 6.9 kOe, 674 emu/cm3 and 0.89, respectively, which reveal its significant potential as perpendicular magnetic recording media.

  13. A soft magnetic underlayer with negative uniaxial magnetocrystalline anisotropy for suppression of spike noise and wide adjacent track erasure in perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Hashimoto, Atsushi; Saito, Shin; Takahashi, Migaku

    2006-04-01

    The suppression of spike noise and wide adjacent track erasure (WATE) are important technical issues in the development of a perpendicular recording medium (PRM). As a solution to both of these problems, this paper presents a type of soft magnetic underlayer (SUL) with negative uniaxial perpendicular magnetic anisotropy. The magnetic anisotropy is achieved by employing a material with negative uniaxial magnetocrystalline anisotropy (Kugrain). WATE is suppressed in the SUL by realizing wide distribution of magnetic flux below the edge of the return yoke, while spike noise is eliminated by ensuring the formation of a Néel wall instead of a Bloch wall in SUL domains. CoIr with the disordered hcp structure is selected as a negative Kugrain material, and c-plane-oriented CoIr films with various Ir contents are prepared for experimental evaluation. Among the films tested, the CoIr film with 22 at. % Ir is found to provide the minimum Kugrain value of -6×106 ergs/cm3. Under a field applied parallel to the film plane, this film exhibits soft magnetic properties, attributable to the high crystallographic symmetry of the c-plane sheet texture. A PRM fabricated using the CoIr SUL is confirmed to display substantially lower spike noise and WATE compared to conventional structures.

  14. Electron acceleration by parallel and perpendicular electric fields during magnetic reconnection without guide field

    NASA Astrophysics Data System (ADS)

    Bessho, N.; Chen, L.-J.; Germaschewski, K.; Bhattacharjee, A.

    2015-11-01

    Electron acceleration due to the electric field parallel to the background magnetic field during magnetic reconnection with no guide field is investigated by theory and two-dimensional electromagnetic particle-in-cell simulations and compared with acceleration due to the electric field perpendicular to the magnetic field. The magnitude of the parallel electric potential shows dependence on the ratio of the plasma frequency to the electron cyclotron frequency as (ωpe/Ωe)-2 and on the background plasma density as nb-1/2. In the Earth's magnetotail, the parameter ωpe/Ωe˜9 and the background (lobe) density can be of the order of 0.01 cm-3, and it is expected that the parallel electric potential is not large enough to accelerate electrons up to 100 keV. Therefore, we must consider the effect of the perpendicular electric field to account for electron energization in excess of 100 keV in the Earth's magnetotail. Trajectories for high-energy electrons are traced in a simulation to demonstrate that acceleration due to the perpendicular electric field in the diffusion region is the dominant acceleration mechanism, rather than acceleration due to the parallel electric fields in the exhaust regions. For energetic electrons accelerated near the X line due to the perpendicular electric field, pitch angle scattering converts the perpendicular momentum to the parallel momentum. On the other hand, for passing electrons that are mainly accelerated by the parallel electric field, pitch angle scattering converting the parallel momentum to the perpendicular momentum occurs. In this way, particle acceleration and pitch angle scattering will generate heated electrons in the exhaust regions.

  15. Readout method from antiferromagnetically coupled perpendicular magnetic recording media using ferromagnetic resonance

    NASA Astrophysics Data System (ADS)

    Yang, T.; Suto, H.; Nagasawa, T.; Kudo, K.; Mizushima, K.; Sato, R.

    2013-12-01

    We fabricate perpendicular magnetic recording media comprising two antiferromagnetically coupled Co/Pt multilayers and investigate its magnetic properties by ferromagnetic resonance (FMR) measurement. In such media, the magnetizations of the two perpendicular magnets are designed to compensate each other in the remanent state in order to reduce the dipolar field, which is a limiting factor in high-density magnetic recording devices. We measure FMR absorption spectra of the media and estimate the magnetic anisotropy and interlayer exchange coupling. We also demonstrate that FMR measurement can be employed to read out the magnetization direction. The principles behind this readout method are different from those behind the conventional method of detecting the stray field from the media by means of a magnetoresistive sensor; therefore, the proposed readout method is applicable to magnetic recording media having zero remanent magnetization. We expand this readout scheme to three-dimensional magnetic recording with several vertically stacked recording layers. By providing each recording layer with a different FMR frequency, we experimentally confirm that layer selective readout is possible.

  16. LOW POWER THIN MAGNETIC FILM MEMORY

    DTIC Science & Technology

    COATINGS, *MEMORY DEVICES, *DATA STORAGE SYSTEMS, *MAGNETIC MATERIALS, *THIN FILM STORAGE DEVICES, DIODES, ELECTRIC CONNECTORS, MAGNETIC CORES, MAGNETIC PROPERTIES, METAL FILMS, SILICON COMPOUNDS, TEXTILE INDUSTRY , TRANSFORMERS.

  17. Magnetic properties of ErN films

    NASA Astrophysics Data System (ADS)

    Meyer, C.; Ruck, B. J.; Preston, A. R. H.; Granville, S.; Williams, G. V. M.; Trodahl, H. J.

    2010-07-01

    We report a magnetization study of stoichiometric ErN nanocrystalline films grown on Si and protected by a GaN passivating layer. According to the temperature dependence of the resistivity the films are heavily doped semiconductors. Above 100 K the magnetization data fit well to a Curie-Weiss behavior with a moment expected within the free-ion ErJ={15}/{2} multiplet. Below 50 K the Curie-Weiss plot steepens to an effective moment corresponding to that in the crystal-field determined quartet ground state, and develops a clear paramagnetic Curie-Weiss temperature of about 4.5 K. Zero-field- and field-cooled magnetization curves and the AC susceptibility firmly establish a ferromagnetic ground state within that multiplet below a Curie temperature of 6.3±0.7 K. Due to the (1 1 1) texture of the film the comparison between the magnetization behavior, when the field is applied parallel and perpendicular to the film plane, gives new information about the magnetic structure. An arrangement of the moments according to the model derived from neutron diffraction for bulk HoN is strongly suggested.

  18. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  19. Magnetic domain patterns on strong perpendicular magnetization of Co/Ni multilayers as spintronics materials: II. Numerical simulations.

    PubMed

    Kudo, Kazue; Suzuki, Masahiko; Kojima, Kazuki; Yasue, Tsuneo; Akutsu, Noriko; Diño, Wilson Agerico; Kasai, Hideaki; Bauer, Ernst; Koshikawa, Takanori

    2013-10-02

    Magnetic domains in ultrathin films form domain patterns, which strongly depend on the magnetic anisotropy. The magnetic anisotropy in Co/Ni multilayers changes with the number of layers. We provide a model to simulate the experimentally observed domain patterns. The model assumes a layer-dependent magnetic anisotropy. With the anisotropy parameter estimated from experimental data, we reproduce the magnetic domain patterns.

  20. Localization Correction to Anomalous Hall Effect in the Perpendicular CoFeB Thin Films

    NASA Astrophysics Data System (ADS)

    Ding, Jinjun; Yang, Xiaofei; Zhu, Tao

    2015-12-01

    In this paper, we reported an obvious weak localization (WL) effect in perpendicular CoFeB sandwiched by Ta and MgO layers. The WL correction to the anomalous Hall effect (AHE) arises when the sheet resistance is larger than 1.5kΩ. Furthermore, it is found that the mechanism of AHE is strongly related to the characteristic of the granularity in the MgO/CoFeB/Ta thin films. Both skew scattering and side jump mechanisms will give comparable contribution in the high disorder regime.

  1. Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field

    PubMed Central

    2011-01-01

    We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including constriction resonances and Coulomb diamonds prove the functionality of the graphene quantum dot with a charging energy of approximately 4.5 meV. We show the evolution of Coulomb resonances as a function of perpendicular magnetic field, which provides indications of the formation of the graphene specific 0th Landau level. Finally, we demonstrate that the complex pattern superimposing the quantum dot energy spectra is due to the formation of additional localized states with increasing magnetic field. PMID:21711781

  2. Perpendicular magnetic tunnel junction with enhanced anisotropy obtained by utilizing an Ir/Co interface

    NASA Astrophysics Data System (ADS)

    Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2016-01-01

    A highly scalable perpendicularly magnetized storage layer of a spin-torque-switching magnetic random-access memory (STT-MRAM) was developed. This storage layer attains a perpendicular magnetic anisotropy (PMA) of above 0.9 erg/cm2 at a thickness of 2 nm. Such high PMA is suitable for pushing STT-MRAM technology beyond the 20 nm node. The key was to realize dual interfacial PMA at both the Ir/Co and FeB/MgO interfaces in the united structure of the storage layer. While a high PMA was retained, a high magnetoresistance ratio (100%) and a low resistance-area product (3.0 Ω µm2) were also achieved.

  3. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    SciTech Connect

    Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  4. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    NASA Astrophysics Data System (ADS)

    Honjo, H.; Fukami, S.; Ishihara, K.; Nebashi, R.; Kinoshita, K.; Tokutome, K.; Murahata, M.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Kasai, N.; Ohno, H.

    2014-05-01

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  5. A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance.

    PubMed

    Wen, Zhenchao; Sukegawa, Hiroaki; Furubayashi, Takao; Koo, Jungwoo; Inomata, Koichiro; Mitani, Seiji; Hadorn, Jason Paul; Ohkubo, Tadakatsu; Hono, Kazuhiro

    2014-10-08

    A 4-fold-symmetry hexagonal Ru emerging in epitaxial MgO/Ru/Co2 FeAl/MgO heterostructures is reported, in which an approximately Ru(022¯3) growth attributes to the lattice matching between MgO, Ru, and Co2 FeAl. Perpendicular magnetic anisotropy of the Co2 FeAl/MgO interface is substantially enhanced. The magnetic tunnel junctions (MTJs) incorporating this structure give rise to the largest tunnel magnetoresistance for perpendicular MTJs using low damping Heusler alloys.

  6. Enhanced ferromagnetic resonance linewidth of the free layer in perpendicular magnetic tunnel junctions

    PubMed Central

    Gopman, D. B.; Dennis, C. L.; McMichael, R. D.; Hao, X.; Wang, Z.; Wang, X.; Gan, H.; Zhou, Y.; Zhang, J.; Huai, Y.

    2017-01-01

    We report the frequency dependence of the ferromagnetic resonance linewidth of the free layer in magnetic tunnel junctions with all perpendicular–to–the–plane magnetized layers. While the magnetic–field–swept linewidth nominally shows a linear growth with frequency in agreement with Gilbert damping, an additional frequency–dependent linewidth broadening occurs that shows a strong asymmetry between the absorption spectra for increasing– and decreasing external magnetic field. Inhomogeneous magnetic fields produced during reversal of the reference and pinned layer complex is demonstrated to be at the origin of the symmetry breaking and the linewidth enhancement. Consequentially, this linewidth enhancement provides indirect information on the magnetic coercivity of the reference and pinned layers. These results have important implications for the characterization of perpendicular magnetized magnetic random access memory bit cells. PMID:28690916

  7. Strong perpendicular exchange bias in epitaxial La(0.7)Sr(0.3)MnO3:BiFeO3 nanocomposite films through vertical interfacial coupling.

    PubMed

    Zhang, Wenrui; Chen, Aiping; Jian, Jie; Zhu, Yuanyuan; Chen, Li; Lu, Ping; Jia, Quanxi; MacManus-Driscoll, Judith L; Zhang, Xinghang; Wang, Haiyan

    2015-09-07

    An exchange bias effect with perpendicular anisotropy is of great interest owing to potential applications such as read heads in magnetic storage devices with high thermal stability and reduced dimensions. Here we report a novel approach for achieving perpendicular exchange bias by orienting the ferromagnetic/antiferromagnetic coupling in the vertical geometry through a unique vertically aligned nanocomposite (VAN) design. Our results demonstrate robust perpendicular exchange bias phenomena in micrometer-thick films employing a prototype material system of antiferromagnetic BiFeO3 and ferromagnetic La0.7Sr0.3MnO3. The unique response of exchange bias to a perpendicular magnetic field reveals the existence of exchange coupling along their vertical heterointerfaces, which exhibits a strong dependence on their strain states. This VAN approach enables a large selection of material systems for achieving perpendicular exchange bias, which could lead to advanced spintronic devices.

  8. Perpendicular Magnetic Anisotropy and Induced Magnetic Structures of Pt Layers in the Fe/Pt Multilayers Investigated by Resonant X-ray Magnetic Scattering

    NASA Astrophysics Data System (ADS)

    Lee, Mihee; Takechi, Ryota; Hosoito, Nobuyoshi

    2017-02-01

    Depth distribution of the magnetization induced in the paramagnetic Pt layers of Fe/Pt multilayers was investigated by resonant X-ray magnetic scattering (RXMS) near the Pt L3 absorption edge. Two samples with different perpendicular magnetic anisotropy (PMA) were chosen for RXMS measurements. The magnetic depth profile of the Pt layer was determined in the magnetic saturation state of the Fe magnetization with the sample of weak PMA. The magnetization process of the Pt layer was investigated with the sample of moderate PMA. It is found that the Pt atoms near the interface region have a perpendicular component of the induced magnetization even in the saturation state of the Fe magnetization, suggesting that the PMA of Fe/Pt multilayers originates from the Pt atoms near the interface region. Concerning the magnetization process, the induced Pt magnetization is not proportional to the Fe magnetization. This implies a complicated magnetizing mechanism of the Pt layer by the Fe magnetization.

  9. Engineering perpendicular magnetic anisotropy in Fe via interstitial nitrogenation: N choose K

    NASA Astrophysics Data System (ADS)

    Zhang, Hongbin; Dirba, Imants; Helbig, Tim; Alff, Lambert; Gutfleisch, Oliver

    2016-11-01

    In this work, combining experimental results and first principles calculations, we show that interstitial nitrogen not only serves for inducing tetragonality in α'-Fe8Nx but is also essential for achieving a high degree of perpendicular magneto-crystalline anisotropy, K. Our results demonstrate that the orbital magnetic moments of the iron atoms above and below N in the direction of magnetization are much more susceptible to the applied magnetic field than their in-plane counterparts, leading to a giant value of K as compared to a hypothetical distorted material without N.

  10. Manipulation of superparamagnetic beads on patterned Au/Co/Au multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Jarosz, A.; Holzinger, D.; Urbaniak, M.; Ehresmann, A.; Stobiecki, F.

    2016-08-01

    The magnetophoresis of water-suspended 4 μm-diameter superparamagnetic beads above topographically patterned, sputter deposited Ti(4 nm)/Au(60 nm)/[Co(0.7 nm)/Au(1 nm)] × 3 multilayers with perpendicular magnetic anisotropy was investigated. The results impressively demonstrate that the magnetic stray field landscape above the stripe structure when superimposed with an external, slowly rotating, field enables the directed transport of magnetic beads across the stripe panel with velocities up to 12 μm s-1.

  11. Control of perpendicular magnetic anisotropy and spin pumping damping in MgO/CoFeB/ Ta/Pt structures

    NASA Astrophysics Data System (ADS)

    Zhu, Zhendong; Chen, Shaohai; Zhao, Bingcheng; Jin, Q. Y.; Chen, Jingsheng; Zhang, Zongzhi

    2017-09-01

    The perpendicular magnetic anisotropy (PMA) and spin pumping induced magnetic damping of CoFeB films can be significantly tuned by the adjacent nonmagnetic layer (Ta or Pt). For the CoFeB/Pt(t Pt) structure, both PMA strength and magnetic damping increase with t Pt, due to the enhanced interfacial orbital hybridization and spin pumping effects, respectively. By inserting a thin Ta interlayer between CoFeB and Pt, the magnetic easy axis immediately turns into in-plane direction. Meanwhile, time-resolved magneto-optical Kerr effect measurement shows an obvious reduction in the magnetic damping, which can be explained as the increase of spin current backflow and the decrease of interfacial spin-mixing conductivity. As the Ta interlayer thickness (t Ta) increases, the effective damping parameter α s measured at saturation field initially decreases and eventually reaches a constant value of 0.027. The α s value at t Ta  >  5 nm does not change regardless of the top Pt layer, implying the influence of Pt is completely isolated and the spin diffusion length of Ta is around 5 nm. Our findings provide more insights into the control of PMA strength and spin pumping contribution to magnetic damping.

  12. Study of CoFeB thickness and composition dependence in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Zhu, M.; Chong, H.; Vu, Q. B.; Brooks, R.; Stamper, H.; Bennett, S.

    2016-02-01

    We studied the CoFeB thickness and composition dependence of tunneling magnetoresistance (TMR) and resistance-area product (RA) in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction (MTJ), in which the bottom CoFeB is coupled to an in-plane exchange biased magnetic layer. This stack structure allows us to measure TMR and RA of the MTJs in sheet film format without patterning them, using current-in-plane-tunneling (CIPT) technique. The thickness ranges for both top and bottom CoFeB to exhibit perpendicular magnetic anisotropy are similar to what are seen in each single magnetic film stack. However, CIPT measurement revealed that there exists an optimal thickness for both top and bottom CoFeB to achieve the highest TMR value. Magnetic hysteresis loops also suggest the thickness-dependent coupling between the top and bottom CoFeB layers. We studied MTJs with two CoFeB compositions (Co40Fe40B20 and Co20Fe60B20) and found that Co20Fe60B20 MTJs give higher TMR and also wider perpendicular thickness range when used at the top layer.

  13. Quantitative relationship between contact stress and magnetic signal strength in perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Liu, Yuliang; Xiong, Shaomin; Lou, Jia; Bogy, David B.; Zhang, Guangyu

    2014-05-01

    A series of nanoscratch experiments is conducted using constant loading scratch profiles to apply mechanical contact stress on perpendicular magnetic recording (PMR) media to cause its magnetic signal strength decay, which is characterized by the magnetic force microscope. The dependence of the magnetic signal strength on the applied normal load is quantitatively investigated. The results indicate that an increase of the applied normal load leads to a decrease of the magnetic signal strength. In addition, in order to obtain a more complete understanding of the results, a 3D finite element model is created to calculate the stress under different normal loads. Finally, the quantitative relationship between residual shear stress and magnetic signal strength is identified.

  14. Ultra Low Energy Switching of Ferromagnet with Perpendicular Anisotropy on Topological Insulator by Voltage Controlled Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Ghosh, Bahniman; Pramanik, Tanmoy; Dey, Rik; Roy, Urmimala; Register, Leonard; Banerjee, Sanjay

    2015-03-01

    We propose and demonstrate, through simulation, an ultra low energy memory device on a topological insulator thin film. The device consists of a thin layer of Fe deposited on the surface of a topological insulator, Bi2Se3. The top surface of Fe is covered with MgO so that the ferromagnetic layer has perpendicular anisotropy. Current is passed on the surface of the topological insulator which switches the magnetization of the Fe ferromagnet through strong exchange interaction, between electrons contributing to the surface current on the Bi2Se3 and the d electrons in the ferromagnet, and spin transfer torque due to shunting of current through the ferromagnet. Voltage controlled magnetic anisotropy enables ultra low energy switching. Our micromagnetic simulations, predict switching time of the order of 2.4 ns and switching energy of the order of 0.16 fJ for a ferromagnetic bit with thermal stability of 90 kBT. The proposed structure combines the advantages of both large spin torque from topological insulators and those of perpendicular anisotropy materials. This work is supported by NRI SWAN and NSF NASCENT Center.

  15. Interplanetary magnetic field power spectra - Mean field radial or perpendicular to radial

    NASA Technical Reports Server (NTRS)

    Sari, J. W.; Valley, G. C.

    1976-01-01

    A detailed frequency analysis of Pioneer-6 interplanetary magnetic field data is carried out for 5 to 15 hour periods during which the mean interplanetary field is approximately radial or perpendicular to radial. The reason why these data sets were chosen is that by making the usual assumption that the phase speed of any wave present is much less than the mean solar wind speed, the measured frequency spectra can be interpreted in terms of the wave number parallel or perpendicular to the mean field, without such additional assumptions as isotropy or the dominance of a particular mode and without measurements of velocity and density. The details of the calculation of the magnetic field power spectra, coherencies, and correlation functions are discussed, along with results obtained directly from the data (such as spectra, slopes, anisotropies, and coherencies). The results are interpreted in terms of MHD theory, and are related to work in other areas.

  16. Perpendicular magnetic anisotropy in Co2MnGa and its anomalous Hall effect

    NASA Astrophysics Data System (ADS)

    Ludbrook, B. M.; Ruck, B. J.; Granville, S.

    2017-02-01

    We report perpendicular magnetic anisotropy in the ferromagnetic Heusler alloy Co2MnGa in a MgO/Co2MnGa/Pd trilayer stack for Co2MnGa thicknesses up to 3.5 nm. There is a thickness- and temperature-dependent spin reorientation transition from perpendicular to in-plane magnetic anisotropy, which we study through the anomalous Hall effect. From the temperature dependence of the anomalous Hall effect, we observe the expected scaling of ρx y A H E with ρxx, suggesting that the intrinsic and side-jump mechanisms are largely responsible for the anomalous Hall effect in this material.

  17. Angular tuning of the magnetic birefringence in rippled cobalt films

    SciTech Connect

    Arranz, Miguel A.; Colino, José M.

    2015-06-22

    We report the measurement of magnetically induced birefringence in rippled Co films. For this purpose, the magneto-optical properties of ion beam eroded ferromagnetic films were studied using Kerr magnetometry and magnetic birefringence in the transmitted light intensity. Upon sufficient ion sculpting, these ripple surface nanostructures developed a defined uniaxial anisotropy in the in-plane magnetization, finely tuning the magnetic birefringence effect. We have studied its dependence on the relative orientation between the ripple direction and the magnetic field, and found this effect to be dramatically correlated with the capability to neatly distinguish the mechanisms for the in-plane magnetization reversal, i.e., rotation and nucleation. This double refraction corresponds univocally to the two magnetization axes, parallel and perpendicular to the ripples direction. We have also observed that tuned birefringence in stack assemblies of rippled Co films, which enables us to technically manipulate the number and direction of refraction axes.

  18. Angular tuning of the magnetic birefringence in rippled cobalt films

    NASA Astrophysics Data System (ADS)

    Arranz, Miguel A.; Colino, José M.

    2015-06-01

    We report the measurement of magnetically induced birefringence in rippled Co films. For this purpose, the magneto-optical properties of ion beam eroded ferromagnetic films were studied using Kerr magnetometry and magnetic birefringence in the transmitted light intensity. Upon sufficient ion sculpting, these ripple surface nanostructures developed a defined uniaxial anisotropy in the in-plane magnetization, finely tuning the magnetic birefringence effect. We have studied its dependence on the relative orientation between the ripple direction and the magnetic field, and found this effect to be dramatically correlated with the capability to neatly distinguish the mechanisms for the in-plane magnetization reversal, i.e., rotation and nucleation. This double refraction corresponds univocally to the two magnetization axes, parallel and perpendicular to the ripples direction. We have also observed that tuned birefringence in stack assemblies of rippled Co films, which enables us to technically manipulate the number and direction of refraction axes.

  19. Deterministic Spin-Orbit Torque Switching of a Perpendicularly Polarized Magnet Using Wedge Shape of the Magnet

    NASA Astrophysics Data System (ADS)

    Bhowmik, Debanjan; Salahuddin, Sayeef

    2016-10-01

    Spin-orbit torque provides an efficient way to switch magnets for low power memory applications by reducing the current density needed to switch the magnetization. Perpendicularly polarized magnets are preferred for high density data storage applications because of their high thermal stability in scaled dimensions. However, spin-orbit torque cannot switch a perpendicularly polarized magnet deterministically from up to down and down to up in the absence of an external magnetic field because spin-orbit torque alone cannot break the symmetry of the system. This poses a severe challenge to the applicability of spin-orbit torque for memory devices. In this paper, we show through micromagnetic simulations that when spin-orbit torque is applied on a magnet with a wedge shape, the moments of the magnet are aligned in-plane. On removal of the spin-orbit torque the moments deterministically evolve to vertically upward or downward direction because the anisotropy axis of the magnet is tilted away from the vertical direction owing to the wedge shape of the magnet. Thus, spin-orbit torque driven deterministic switching of the magnet in the absence of an external magnetic field is possible.

  20. Optical isolator based on mode conversion in magnetic garnet films.

    PubMed

    Hemme, H; Dötsch, H; Menzler, H P

    1987-09-15

    Calculations are presented describing a novel optical isolator which works by complete TE(0)-TM(0) mode conversion in magnetic garnet films caused by stress-induced optical anisotropy (50%) and by Faraday rotation (50%). These conversions take place along two different, perpendicular light paths in the same crystal that are connected by an integrated mirror. Possible tolerances of the film parameters are given so that a 30-dB isolation is still guaranteed.

  1. Characterization of rf-SSET in both in-plane and perpendicular magnetic fields

    NASA Astrophysics Data System (ADS)

    Tang, Chunyang; Yang, Zhen; Yuan, Mingyun; Rimberg, A. J.; Savage, D. E.; Eriksson, M. A.; Rimberg Team; Eriksson Collaboration

    2013-03-01

    Previous success in coupling an aluminum radio-frequency superconducting single electron transistor (rf-SSET) to quantum dots (QDs) has demonstrated use of the rf-SSET as an ultra-sensitive and fast charge sensor. Since a magnetic field is usually necessary for quantum dot qubit manipulation, it is important to understand the effect of magnetic fields, either in-plane or perpendicular, on the performance of any charge sensor near the QDs. Here we report characterization of rf-SSETs in both in-plane and perpendicular magnetic fields. The rf-SSET works well in an in-plane fields up to 1 Tesla at a temperature of 30 mK. At 0.3K, in a perpendicular field generated by a stripline located 700 nm away, the rf-SSET charge sensitivity even shows improvement for up to 2.1 mA current through the stripline (corresponding roughly to a field of 6 Gauss). This work was supported by NSA, LPS and ARO

  2. Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

    SciTech Connect

    Gan, Huadong Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming

    2014-11-10

    Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

  3. Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

    NASA Astrophysics Data System (ADS)

    Gan, Huadong; Malmhall, Roger; Wang, Zihui; Yen, Bing K.; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming

    2014-11-01

    Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

  4. Perpendicular magnetic anisotropy and microstructure properties of nanoscale Co/Au multilayers

    NASA Astrophysics Data System (ADS)

    Rizal, C.; Fullerton, E. E.

    2017-09-01

    We investigated the role of microstructure and Co layer thickness on the perpendicular magnetic anisotropy of as-deposited and annealed Ta (5 nm)/[Co (t Co)/Au (2 nm)]  ×  N  =  20 multilayers with 1  ⩽  t Co  ⩽  2 nm prepared using dc-magnetron sputtering. These multilayers were characterized using a vibrating sample magnetometer, a p-MOKE magnetometer and a microscopy magnetometer, small angle x-ray reflection (XRR), and wide angle x-ray diffraction (XRD) analysis. These multilayers demonstrated strong perpendicular magnetic anisotropy with their saturation magnetization close to the bulk magnetization of Co. Magnetization and magnetic anisotropy increased with annealing and this increase is directly linked to the strain relaxation and sharpening of the interfaces after annealing. Using XRR analysis before and after annealing, and fitting these XRR data, the multilayer periodicities are extracted and the refined layer thickness and surface roughness are determined. Using XRD analysis and fitting these XRD spectra, information regarding both the average lattice spacing of atoms and the strain developed on an individual layer were determined.

  5. Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies

    SciTech Connect

    Fallarino, Lorenzo; Sluka, Volker; Kent, Andrew D.; Kardasz, Bartek; Pinarbasi, Mustafa; Berger, Andreas

    2016-08-22

    Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies separated by a non-magnetic spacer is studied using ferromagnetic resonance. The samples consist of a Co/Ni multilayer with perpendicular magnetic anisotropy and a CoFeB layer with easy-plane anisotropy separated by a variable thickness Ru layer. At a fixed frequency, we show that there is an avoided crossing of layer ferromagnetic resonance modes providing direct evidence for interlayer coupling. The mode dispersions for different Ru thicknesses are fit to a Heisenberg-type model to determine the interlayer exchange coupling strength and layer properties. The resulting interlayer exchange coupling varies continuously from antiferromagnetic to ferromagnetic as a function of the Ru interlayer thickness. These results show that the magnetic layer single domain ground state consists of magnetizations that can be significantly canted with respect to the layer planes and the canting can be tuned by varying the Ru thickness and the layer magnetic characteristics, a capability of interest for applications in spin-transfer torque devices.

  6. Interfacial exchange coupling and magnetization reversal in perpendicular [Co/Ni]N/TbCo composite structures.

    PubMed

    Tang, M H; Zhang, Zongzhi; Tian, S Y; Wang, J; Ma, B; Jin, Q Y

    2015-06-15

    Interfacial exchange coupling and magnetization reversal characteristics in the perpendicular heterostructures consisting of an amorphous ferrimagnetic (FI) TbxCo(100-x) alloy layer exchange-coupled with a ferromagnetic (FM) [Co/Ni]N multilayer have been investigated. As compared with pure TbxCo(100-x) alloy, the magnetization compensation composition of the heterostructures shift to a higher Tb content, implying Co/Ni also serves to compensate the Tb moment in TbCo layer. The net magnetization switching field Hc⊥ and interlayer interfacial coupling field Hex, are not only sensitive to the magnetization and thickness of the switched TbxCo(100-x) or [Co/Ni]N layer, but also to the perpendicular magnetic anisotropy strength of the pinning layer. By tuning the layer structure we achieve simultaneously both large Hc⊥ = 1.31 T and Hex = 2.19 T. These results, in addition to the fundamental interest, are important to understanding of the interfacial coupling interaction in the FM/FI heterostructures, which could offer the guiding of potential applications in heat-assisted magnetic recording or all-optical switching recording technique.

  7. Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies

    NASA Astrophysics Data System (ADS)

    Fallarino, Lorenzo; Sluka, Volker; Kardasz, Bartek; Pinarbasi, Mustafa; Berger, Andreas; Kent, Andrew D.

    2016-08-01

    Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies separated by a non-magnetic spacer is studied using ferromagnetic resonance. The samples consist of a Co/Ni multilayer with perpendicular magnetic anisotropy and a CoFeB layer with easy-plane anisotropy separated by a variable thickness Ru layer. At a fixed frequency, we show that there is an avoided crossing of layer ferromagnetic resonance modes providing direct evidence for interlayer coupling. The mode dispersions for different Ru thicknesses are fit to a Heisenberg-type model to determine the interlayer exchange coupling strength and layer properties. The resulting interlayer exchange coupling varies continuously from antiferromagnetic to ferromagnetic as a function of the Ru interlayer thickness. These results show that the magnetic layer single domain ground state consists of magnetizations that can be significantly canted with respect to the layer planes and the canting can be tuned by varying the Ru thickness and the layer magnetic characteristics, a capability of interest for applications in spin-transfer torque devices.

  8. Electric-field-driven domain wall dynamics in perpendicularly magnetized multilayers

    NASA Astrophysics Data System (ADS)

    López González, Diego; Shirahata, Yasuhiro; Van de Wiele, Ben; Franke, Kévin J. A.; Casiraghi, Arianna; Taniyama, Tomoyasu; van Dijken, Sebastiaan

    2017-03-01

    We report on reversible electric-field-driven magnetic domain wall motion in a Cu/Ni multilayer on a ferroelectric BaTiO3 substrate. In our heterostructure, strain-coupling to ferroelastic domains with in-plane and perpendicular polarization in the BaTiO3 substrate causes the formation of domains with perpendicular and in-plane magnetic anisotropy, respectively, in the Cu/Ni multilayer. Walls that separate magnetic domains are elastically pinned onto ferroelectric domain walls. Using magneto-optical Kerr effect microscopy, we demonstrate that out-of-plane electric field pulses across the BaTiO3 substrate move the magnetic and ferroelectric domain walls in unison. Our experiments indicate an exponential increase of domain wall velocity with electric field strength and opposite domain wall motion for positive and negative field pulses. The application of a magnetic field does not affect the velocity of magnetic domain walls, but independently tailors their internal spin structure, causing a change in domain wall dynamics at high velocities.

  9. Thickness-dependent magnetic properties and strain-induced orbital magnetic moment in SrRuO3 thin films

    NASA Astrophysics Data System (ADS)

    Ishigami, K.; Yoshimatsu, K.; Toyota, D.; Takizawa, M.; Yoshida, T.; Shibata, G.; Harano, T.; Takahashi, Y.; Kadono, T.; Verma, V. K.; Singh, V. R.; Takeda, Y.; Okane, T.; Saitoh, Y.; Yamagami, H.; Koide, T.; Oshima, M.; Kumigashira, H.; Fujimori, A.

    2015-08-01

    Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain, and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SRO thin films with varying thicknesses fabricated on SrTiO3(001) substrates by soft x-ray magnetic circular dichroism at the Ru M2 ,3 edge. Results have shown that, with decreasing film thickness, the film changes from ferromagnetic to nonmagnetic at around 3 monolayer thickness, consistent with previous magnetization and magneto-optical Kerr effect measurements. The orbital magnetic moment perpendicular to the film was found to be ˜0.1 μB/Ru , and remained nearly unchanged with decreasing film thickness while the spin magnetic moment decreases. A mechanism for the formation of the orbital magnetic moment is discussed based on the electronic structure of the compressively strained SRO film.

  10. Control of Interfacial Structure for Granular Type Perpendicular Magnetic Recording Media

    NASA Astrophysics Data System (ADS)

    Saito, Shin; Ueno, Tomonori; Sasaki, Shingo; Takahashi, Migaku

    For realizing perpendicular magnetic recording media (PRM) for hard disk drive (HDD), precisely controlled fabrication technology with angstrom scale according to the required properties is essential from material, processes, and physical view point. PRM presently consist of three functional parts; a soft magnetic underlayer (SUL), a nonmagnetic intermediate layer, and a recording layer (RL). The control of domain structure through interlayer coupling induced by RKKY-like interaction in SUL and narrower size distribution of the magnetic particles with magnetically decoupling in recording layer are indispensable for advanced PRM with high signal to noise ratio and thermal stability. In this paper, structure and magnetic properties for SUL and RL in a real fabricated PRM is discussed in connection with sputtering process parameters and also target materials.

  11. Influence of sloped electric field on magnetic-field-induced domain wall creep in a perpendicularly magnetized Co wire

    NASA Astrophysics Data System (ADS)

    Kakizakai, Haruka; Yamada, Kihiro; Ando, Fuyuki; Kawaguchi, Masashi; Koyama, Tomohiro; Kim, Sanghoon; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo

    2017-05-01

    A creep motion of the magnetic domain wall (DW) in a perpendicularly magnetized Co wire, where the DW energy is artificially varied by applying a sloped electric field, is studied. Under the sloped electric field and a constant external magnetic field, the DW velocity gradually changes according to the position of the wire owing to the spatially varying DW energy. Although the sloped DW energy can be a source to drive a DW, no clear electric-field-induced DW motion is observed, most likely because the effective magnetic field induced by the sloped electric field is very small in the present system.

  12. Direct observation of massless domain wall dynamics in nanostripes with perpendicular magnetic anisotropy.

    PubMed

    Vogel, J; Bonfim, M; Rougemaille, N; Boulle, O; Miron, I M; Auffret, S; Rodmacq, B; Gaudin, G; Cezar, J C; Sirotti, F; Pizzini, S

    2012-06-15

    Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO(x)) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the pulse. The very low "mass" of these domain walls is attributed to the combination of their narrow width and high damping parameter α. Such a small inertia should allow accurate control of domain wall motion by tuning the duration and amplitude of the current pulses.

  13. Perpendicular magnetic anisotropy in Co2Fe0.4Mn0.6Si

    NASA Astrophysics Data System (ADS)

    Ludbrook, B. M.; Ruck, B. J.; Granville, S.

    2016-07-01

    We report perpendicular magnetic anisotropy (PMA) in the half-metallic ferromagnetic Heusler alloy Co2Fe0.4Mn0.6Si (CFMS) in a MgO/CFMS/Pd trilayer stack. PMA is found for CFMS thicknesses between 1 and 2 nm, with a magnetic anisotropy energy density of KU=1.5 ×106 erg/cm3 for tCFMS=1.5 nm. Both the MgO and Pd layer are necessary to induce the PMA. We measure a tunable anomalous Hall effect, where its sign and magnitude vary with both the CFMS and Pd thickness.

  14. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    NASA Astrophysics Data System (ADS)

    Song, Kyungmi; Lee, Kyung-Jin

    2015-08-01

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  15. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    SciTech Connect

    Song, Kyungmi; Lee, Kyung-Jin

    2015-08-07

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  16. Anomalous Hall hysteresis in T m3F e5O12/Pt with strain-induced perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Xu, Yadong; Garay, Javier E.; Shi, Jing

    2016-10-01

    We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator T m3F e5O12 (TIG) films grown with pulsed laser deposition on a substituted G d3G a5O12 substrate which maximizes the tensile strain at the interface. In bilayers consisting of Pt and TIG, we observe large squared Hall hysteresis loops over a wide range of thicknesses of Pt at room temperature. When a thin Cu layer is inserted between Pt and TIG, the Hall hysteresis magnitude decays but stays finite as the thickness of Cu increases up to 5 nm. However, if the Cu layer is placed atop Pt instead, the Hall hysteresis magnitude is consistently larger than when the Cu layer with the same thickness is inserted in between for all Cu thicknesses. These results suggest that both the proximity-induced ferromagnetism and spin current contribute to the anomalous Hall effect.

  17. Buffer influence on magnetic dead layer, critical current, and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Frankowski, Marek; Żywczak, Antoni; Czapkiewicz, Maciej; Zietek, Sławomir; Kanak, Jarosław; Banasik, Monika; Powroźnik, Wiesław; Skowroński, Witold; Checiński, Jakub; Wrona, Jerzy; Głowiński, Hubert; Dubowik, Janusz; Ansermet, Jean-Philippe; Stobiecki, Tomasz

    2015-06-01

    We present a detailed study of Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of Magnetic Tunnel Junctions (MTJs) such as critical switching current and thermal stability. We study buffer/FeCoB/MgO/Ta/Ru and buffer/MgO/FeCoB/Ta/Ru layers, investigating the crystallographic texture, the roughness of the buffers, the magnetic domain pattern, the magnetic dead layer thickness, and the perpendicular magnetic anisotropy fields for each sample. Additionally, we examine the effect of the current induced magnetization switching for complete nanopillar MTJs with lateral dimensions of 270 × 180 nm. Buffer Ta 5/Ru 10/Ta 3 (thicknesses in nm), which has the thickest dead layer, exhibits a much larger thermal stability factor (63 compared to 32.5) while featuring a slightly lower critical current density value (1.25 MA/cm2 compared to 1.5 MA/cm2) than the buffer with the thinnest dead layer Ta 5/Ru 20/Ta 5. We can account for these results by considering the difference in damping which compensates for the difference in the switching barrier heights.

  18. Magnetic properties of perpendicular exchange coupled composite with a synthesis antiferromagnetic sandwich structure

    NASA Astrophysics Data System (ADS)

    Chu, H. G.; Guo, H. H.; Xie, H. L.; Ma, B.; Zhang, Z. Z.; Wang, Y.; Jin, Q. Y.

    2014-03-01

    In this study, an exchange coupled composite (ECC) film with an antiferromagnetic sandwich structure L10-FePt/[Co/Ni]5/Ru/[Co/Ni]10 (FePt-CN-Ru) is prepared via dc magnetron sputtering and measured by vibrating sample magnetometer. The results show that FePt-CN-Ru film exhibits ECC characteristics, with excellent angular tolerance, low remanance magnetization, and a narrow switching field. Its thermal stability is higher than that of conventional ECC film. Finally, magnetization reversal is demonstrated through micromagnetic simulation.

  19. Magnetic and Magnetooptical Properties of Co-Al Alloy Thin Films on a Nanostructured Substrate

    NASA Astrophysics Data System (ADS)

    Nakatani, Morio; Suzuki, Yoshihisa; Sumi, Satoshi; Tanemura, Sakae

    2005-01-01

    We investigated magnetic and magnetooptical properties of Co-Al magnetic thin films on a nanostructured substrate. The nanostructured substrate was made of polycarbonate by injection molding. The stamper was made by electron beam cutting. The nanostructured substrate contributed a perpendicular magnetic anisotropy component to the film and decreased the reflectance of the film. The Kerr rotation angle on the nanostructured substrate was greater than that on a glass substrate.

  20. Domain wall generated by graded interlayer coupling in Co/Pt/Co film with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Matczak, M.; Schäfer, R.; Urbaniak, M.; Szymański, B.; Kuświk, P.; Jarosz, A.; Schmidt, M.; Aleksiejew, J.; Jurga, S.; Stobiecki, F.

    2015-07-01

    A magnetic multilayer of the structure substrate/Pt-15 nm/Co-0.8 nm/Pt-wedge(0-7 nm)/Co-0.6 nm/Pt-2 nm is characterized by perpendicular anisotropy of both Co layers. For a Pt spacer thickness t Pt ≤ 2.6 nm , the magnetization reversal of the Co-layers occurs cooperatively, while for larger t Pt , it occurs sequentially. The Co-layer with 0.6 nm thickness (CoS) is magnetically softer than the second one (CoH). In the 2.6 ≤ t Pt ≤ 3.0 nm range, there are significant changes of the switching field due to a strong gradient of the interlayer coupling. In this region, the magnetization reversal in the CoS layer takes place reversibly by the propagation of a single, straight domain wall. This specific nature of magnetization reversal is explained by a decelerated motion of the domain wall observed both for the direction corresponding to the increasing, as well as decreasing coupling energy.

  1. Enhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Almasi, H.; Hickey, D. Reifsnyder; Newhouse-Illige, T.; Xu, M.; Rosales, M. R.; Nahar, S.; Held, J. T.; Mkhoyan, K. A.; Wang, W. G.

    2015-05-01

    Structural, magnetic, and transport studies have been performed on perpendicular magnetic tunnel junctions (pMTJ) with Mo as the buffer and capping layers. After annealing samples at 300 °C and higher, consistently better performance was obtained compared to that of conventional pMTJs with Ta layers. Large tunneling magnetoresistance (TMR) and perpendicular magnetic anisotropy (PMA) values were retained in a wide range of samples with Mo layers after annealing for 2 h at 400 °C, in sharp contrast to the junctions with Ta layers, in which superparamagnetic behavior with nearly vanishing magnetoresistance was observed. As a result of the greatly improved thermal stability, TMR as high as 162% was obtained in junctions containing Mo layers. These results highlight the importance of the heavy-metal layers adjacent to CoFeB electrodes for achieving larger TMR, stronger PMA, and higher thermal stability in pMTJs.

  2. Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries

    PubMed Central

    Yu, Guoqiang; Akyol, Mustafa; Upadhyaya, Pramey; Li, Xiang; He, Congli; Fan, Yabin; Montazeri, Mohammad; Alzate, Juan G.; Lang, Murong; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.

    2016-01-01

    Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied. Recently, it has been further demonstrated that the in-plane magnetic field can be eliminated by introducing a new type of perpendicular field-like SOT via incorporating a lateral structural asymmetry into the device. Typically, however, when a current is applied to such devices with combined vertical and lateral asymmetries, both the perpendicular field-like torque and the damping-like torque coexist, hence jointly affecting the magnetization switching behavior. Here, we study perpendicular magnetization switching driven by the combination of the perpendicular field-like and the damping-like SOTs, which exhibits deterministic switching mediated through domain wall propagation. It is demonstrated that the role of the damping-like SOT in the deterministic switching is highly dependent on the magnetization direction in the domain wall. By contrast, the perpendicular field-like SOT is solely determined by the relative orientation between the lateral structural asymmetry and the current direction, regardless of the magnetization direction in the domain wall. The experimental results further the understanding of SOTs-induced switching, with implications for spintronic devices. PMID:27050160

  3. Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries

    NASA Astrophysics Data System (ADS)

    Yu, Guoqiang; Akyol, Mustafa; Upadhyaya, Pramey; Li, Xiang; He, Congli; Fan, Yabin; Montazeri, Mohammad; Alzate, Juan G.; Lang, Murong; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.

    2016-04-01

    Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied. Recently, it has been further demonstrated that the in-plane magnetic field can be eliminated by introducing a new type of perpendicular field-like SOT via incorporating a lateral structural asymmetry into the device. Typically, however, when a current is applied to such devices with combined vertical and lateral asymmetries, both the perpendicular field-like torque and the damping-like torque coexist, hence jointly affecting the magnetization switching behavior. Here, we study perpendicular magnetization switching driven by the combination of the perpendicular field-like and the damping-like SOTs, which exhibits deterministic switching mediated through domain wall propagation. It is demonstrated that the role of the damping-like SOT in the deterministic switching is highly dependent on the magnetization direction in the domain wall. By contrast, the perpendicular field-like SOT is solely determined by the relative orientation between the lateral structural asymmetry and the current direction, regardless of the magnetization direction in the domain wall. The experimental results further the understanding of SOTs-induced switching, with implications for spintronic devices.

  4. Magnetic design evolution in perpendicular magnetic recording media as revealed by resonant small angle x-ray scattering

    NASA Astrophysics Data System (ADS)

    Wang, Tianhan; Mehta, Virat; Ikeda, Yoshihiro; Do, Hoa; Takano, Kentaro; Florez, Sylvia; Terris, Bruce D.; Wu, Benny; Graves, Catherine; Shu, Michael; Rick, Ramon; Scherz, Andreas; Stöhr, Joachim; Hellwig, Olav

    2013-09-01

    We analyze the magnetic design for different generations of perpendicular magnetic recording (PMR) media using resonant soft x-ray small angle x-ray scattering. This technique allows us to simultaneously extract in a single experiment the key structural and magnetic parameters, i.e., lateral structural grain and magnetic cluster sizes as well as their distributions. We find that earlier PMR media generations relied on an initial reduction in the magnetic cluster size down to the grain level of the high anisotropy granular base layer, while very recent media designs introduce more exchange decoupling also within the softer laterally continuous cap layer. We highlight that this recent development allows optimizing magnetic cluster size and magnetic cluster size distribution within the composite media system for maximum achievable area density, while keeping the structural grain size roughly constant.

  5. Perpendicular magnetic anisotropy of Co/Pt bilayers on ALD HfO2

    NASA Astrophysics Data System (ADS)

    Vermeulen, Bart F.; Wu, Jackson; Swerts, Johan; Couet, Sebastien; Linten, Dimitri; Radu, Iuliana P.; Temst, Kristiaan; Rampelberg, Geert; Detavernier, Christophe; Groeseneken, Guido; Martens, Koen

    2016-10-01

    Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-κ dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2/Co/Pt/Ru stack in N2 with the Keff of 0.25 mJ/m2 as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co/Pt bilayer. High-κ dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies.

  6. Determination of spin torque efficiencies in heterostructures with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Pai, Chi-Feng; Mann, Maxwell; Tan, Aik Jun; Beach, Geoffrey S. D.

    2016-04-01

    We report that by measuring a current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin-Hall effect (SHE) contribution of the current-induced effective field per current density χSHE can be estimated for Pt- and Ta-based magnetic heterostructures with perpendicular magnetic anisotropy. We apply this technique to a Pt-based sample with its ferromagnetic (FM) layer being wedged deposited and discover an extra effective field contribution χWedged due to the asymmetric nature of the deposited FM layer. We confirm the correlation between χWedged and the asymmetric depinning process in FM layer during magnetization switching by magneto-optical Kerr microscopy. These results indicate the possibility of engineering deterministic spin-orbit torque switching by controlling the symmetry of domain expansion through the materials growth process.

  7. Transition boundary model of magnetization distribution in high density perpendicular recording

    NASA Astrophysics Data System (ADS)

    Liu, Z. J.; Chen, B. J.; Wang, H. T.

    2011-04-01

    A model is introduced in this paper to describe the transition boundaries in perpendicular magnetic recording at extremely high density. In contrary to the previous signal generation models, effects of magnetization transition curvature and the track edge fluctuations are adequately included in the new model that is designed to capture the actual transition boundaries, i.e., the variations of magnetization distribution in both down-track and across-track directions. The model is used to predict the readback waveforms based on the detailed information obtained from micromagnetic simulations taking into account the head and media parameters. The model is therefore suitable for magnetic recording at extremely high densities when the impact of the transition curvature and the track edge effect on the recording performance becomes more significant.

  8. Very strong antiferromagnetic interlayer exchange coupling with iridium spacer layer for perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Yakushiji, Kay; Sugihara, Atsushi; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji

    2017-02-01

    We systematically studied the interlayer exchange coupling (IEC) in a perpendicular synthetic antiferromagnetically coupled structure having an Ir spacer layer for perpendicular magnetic tunnel junctions (p-MTJs). We found a broader peak in IEC energy density (Jex) versus spacer thickness (tIr) compared with the case of using a Ru spacer. The highest IEC energy density was 2.6 erg/cm2 at a tIr of about 5 nm. The p-MTJ nanopillars had a high magnetoresistance ratio (131%) as well as a high spin-transfer torque (STT) switching efficiency (about 2). An Ir spacer can be used to make a stable reference layer for STT magnetoresistive random access memory.

  9. Tuning of the nucleation field in nanowires with perpendicular magnetic anisotropy

    SciTech Connect

    Kimling, Judith; Gerhardt, Theo; Kobs, Andre; Vogel, Andreas; Peter Oepen, Hans; Merkt, Ulrich; Meier, Guido; Wintz, Sebastian; Im, Mi-Young; Fischer, Peter

    2013-04-28

    We report on domain nucleation in nanowires consisting of Co/Pt multilayers with perpendicular magnetic anisotropy that are patterned by electron-beam lithography, sputter deposition, and lift-off processing. It is found that the nucleation field can be tuned by changing the geometry of the wire ends. A reduction of the nucleation field by up to 60% is achieved when the wire ends are designed as tips. This contrasts with the behavior of wires with in-plane anisotropy where the nucleation field increases when triangular-pointed ends are used. In order to clarify the origin of the reduction of the nucleation field, micromagnetic simulations are employed. The effect cannot be explained by the lateral geometrical variation but is attributable to a local reduction of the perpendicular anisotropy caused by shadowing effects due to the resist mask during sputter deposition of the multilayer.

  10. Mechanisms of perpendicular magnetic anisotropy and interlayer exchange coupling in MgO-based tunnel junctions

    NASA Astrophysics Data System (ADS)

    Chshiev, Mairbek

    2013-03-01

    Magnetic tunnel junctions (MTJ) comprising ferromagnetic (FM) electrodes with MgO spacer have been an object of high interest for spintronics due to Bloch states symmetry spin filtering leading to high tunnel magnetoresistance (TMR) and due to observation of antiferromagnetic (AF) coupling between FM electrodes across MgO spacer. This attention have been strongly reinforced in a view of a huge interest in MTJs with perpendicularly magnetized magnetic layers (p-MTJs) originating from large values of interfacial perpendicular magnetic anisotropy (PMA) first observed at Pt|Co|MOx interfaces (M =Ta, Mg, Al, Ru...) and later reported for Co|MgO and CoFeB|MgO p-MTJs. In this talk we will elucidate mechanisms responsible for the PMA from first-principles and report the effect of interfacial oxidation conditions on the PMA in Fe(Co)|MgO p-MTJs. In particular, we found very large PMA values for MTJs with pure interfaces in agreement with recent experiments. Furthermore, it will be demonstrated that oxidation conditions strongly affect the PMA which strongly correlates with TMR in agreement with experiments. Finally, we will discuss the origin of AF coupling in Co|MgO p-MTJs which oscillates as a function of FM layer thickness in agreement with theories of interlayer exchange coupling in MTJ. We acknowledge support of Grenoble Nanosciences Foundation.

  11. Observations of thermally excited ferromagnetic resonance on spin torque oscillators having a perpendicularly magnetized free layer

    SciTech Connect

    Tamaru, S. Kubota, H.; Yakushiji, K.; Konoto, M.; Nozaki, T.; Fukushima, A.; Imamura, H.; Taniguchi, T.; Arai, H.; Tsunegi, S.; Yuasa, S.; Suzuki, Y.

    2014-05-07

    Measurements of thermally excited ferromagnetic resonance were performed on spin torque oscillators having a perpendicularly magnetized free layer and in-plane magnetized reference layer (abbreviated as PMF-STO in the following) for the purpose of obtaining magnetic properties in the PMF-STO structure. The measured spectra clearly showed a large main peak and multiple smaller peaks on the high frequency side. A Lorentzian fit on the main peak yielded Gilbert damping factor of 0.0041. The observed peaks moved in proportion to the out-of-plane bias field. From the slope of the main peak frequency as a function of the bias field, Lande g factor was estimated to be about 2.13. The mode intervals showed a clear dependence on the diameter of the PMF-STOs, i.e., intervals are larger for a smaller diameter. These results suggest that the observed peaks should correspond to eigenmodes of lateral spin wave resonance in the perpendicularly magnetized free layer.

  12. Enhancement of L10 ordering with the c-axis perpendicular to the substrate in FePt alloy film by using an epitaxial cap-layer

    NASA Astrophysics Data System (ADS)

    Ohtake, Mitsuru; Nakamura, Masahiro; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

    2017-05-01

    FePt alloy thin films with cap-layers of MgO or C are prepared on MgO(001) single-crystal substrates by using a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The FePt film thickness is fixed at 10 nm, whereas the cap-layer thickness is varied from 1 to 10 nm. The influences of cap-layer material and cap-layer thickness on the variant structure and the L10 ordering are investigated. Single-crystal FePt(001) films with disordered fcc structure (A1) grow epitaxially on the substrates at 200 °C. Single-crystal MgO(001) cap-layers grow epitaxially on the FePt films, whereas the structure of C cap-layers is amorphous. The phase transformation from A1 to L10 occurs when the films are annealed at 600 °C. The FePt films with MgO cap-layers thicker than 2 nm consist of L10(001) variant with the c-axis perpendicular to the substrate surface, whereas those with C cap-layers involve small volumes of L10(100) and (010) variants with the c-axis lying in the film plane. The in-plane and the out-of-plane lattices are respectively more expanded and contracted in the continuous-lattice MgO/FePt/MgO structure due to accommodations of misfits of FePt film with respect to not only the MgO substrate but also the MgO cap-layer. The lattice deformation promotes phase transformation along the perpendicular direction and L10 ordering. The FePt films consisting of only L10(001) variant show strong perpendicular magnetic anisotropies and low in-plane coercivities. The present study shows that an introduction of epitaxial cap-layer is effective in controlling the c-axis perpendicular to the substrate surface.

  13. Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions

    SciTech Connect

    Zhang, Xiangli; Zhang, Zongzhi; Liu, Yaowen; Jin, Q. Y.

    2015-05-07

    Macrospin simulations are performed to model the magnetization switching driven by the combined action of electric-field and spin-polarized electric current (spin-transfer torque; STT) in MgO/CoFeB based magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy. The results indicate that at low current case, the free layer magnetization shows a fast toggle-like switching, the final parallel or antiparallel magnetization state is determined by the electric-field effect, and the STT just helps or resists it to reach the final state depending on the current direction. However, with the increase of current strength, the contribution of STT effect gradually increases, which eventually achieves a deterministic magnetization switching state. Simulations further demonstrate that by appropriately tuning the parameters of applied electric-field and current the power consumption can be easily reduced by two orders of magnitude.

  14. Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis

    NASA Astrophysics Data System (ADS)

    Mazraati, Hamid; Le, Tuan Q.; Awad, Ahmad A.; Chung, Sunjae; Hirayama, Eriko; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo; Åkerman, Johan

    2016-09-01

    We study the magnetodynamic modes of a magnetic tunnel junction with perpendicular magnetic easy axis (p-MTJ) in in-plane magnetic fields using device-level ferromagnetic resonance spectroscopy. We compare our experimental results to those of micromagnetic simulations of the entire p-MTJ. Using an iterative approach to determine the material parameters that best fit our experiment, we find excellent agreement between experiments and simulations in both the static magnetoresistance and magnetodynamics in the free and reference layers. From the micromagnetic simulations, we determine the spatial mode profiles, the localization of the modes and, as a consequence, their distribution in the frequency domain due to the inhomogeneous internal field distribution inside the p-MTJ under different applied field regimes. We also conclude that the excitation mechanism is a combination of the microwave voltage modulated perpendicular magnetic anisotropy, the microwave Oersted field, and the spin-transfer torque generated by the microwave current.

  15. Size and voltage dependence of effective anisotropy in sub-100-nm perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Piotrowski, Stephan K.; Bapna, Mukund; Oberdick, Samuel D.; Majetich, Sara A.; Li, Mingen; Chien, C. L.; Ahmed, Rizvi; Victora, R. H.

    2016-07-01

    Magnetic tunnel junctions with perpendicular magnetic anisotropy are investigated using a conductive atomic force microscope. The 1.23 -nm Co40Fe40B20 recording layer coercivity exhibits a size dependence which suggests single-domain behavior for diameters ≤100 nm. Focusing on devices with diameters smaller than 100 nm, we determine the effect of voltage and size on the effective device anisotropy Keff using two different techniques. Keff is extracted both from distributions of the switching fields of the recording and reference layers and from measurement of thermal fluctuations of the recording layer magnetization when a field close to the switching field is applied. The results from both sets of measurements reveal that Keff increases monotonically with decreasing junction diameter, consistent with the size dependence of the demagnetization energy density. We demonstrate that Keff can be controlled with a voltage down to the smallest size measured, 64 nm.

  16. Nonadiabatic electron dynamics of single-electron transport in a perpendicular magnetic field

    SciTech Connect

    He, JianHong; Guo, HuaZhong; Gao, Jie

    2014-04-28

    We present results of our investigation into the nonadiabatic electron dynamics of a moving quantum dot assisted by surface acoustic waves (SAWs) in a perpendicular magnetic field. The measurements show the evolution of a quantized acoustoelectric current in a modulated external field, which provides direct information of the energy spectrum and the occupation of the SAW-induced elliptical dynamical quantum dot. By comparing the magnetic field dependence of the spectrum with that of a somewhat symmetric circular dot, we find the appearance of nonadiabatic excitations at low magnetic fields resulting from the anisotropy of the dot. We also detect the transitions between different quantum states of the elliptical dot, achieved by exploiting the interference of two phase-tuned SAWs. Our results demonstrate that the quantum states in an asymmetric dot are fragile and extremely sensitive to their environment.

  17. High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy.

    PubMed

    Zeng, Zhongming; Amiri, Pedram Khalili; Krivorotov, Ilya N; Zhao, Hui; Finocchio, Giovanni; Wang, Jian-Ping; Katine, Jordan A; Huai, Yiming; Langer, Juergen; Galatsis, Kosmas; Wang, Kang L; Jiang, Hongwen

    2012-07-24

    The excitation of the steady-state precessions of magnetization opens a new way for nanoscale microwave oscillators by exploiting the transfer of spin angular momentum from a spin-polarized current to a ferromagnet, referred to as spin-transfer nano-oscillators (STNOs). For STNOs to be practical, however, their relatively low output power and their relatively large line width must be improved. Here we demonstrate that microwave signals with maximum measured power of 0.28 μW and simultaneously narrow line width of 25 MHz can be generated from CoFeB-MgO-based magnetic tunnel junctions having an in-plane magnetized reference layer and a free layer with strong perpendicular anisotropy. Moreover, the generation efficiency is substantially higher than previously reported STNOs. The results will be of importance for the design of nanoscale alternatives to traditional silicon oscillators used in radio frequency integrated circuits.

  18. Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2015-06-21

    The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0 nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.

  19. Perpendicular magnetic anisotropy with enhanced orbital moments of Fe adatoms on a topological surface of Bi2Se3.

    PubMed

    Ye, Mao; Kuroda, Kenta; Takeda, Yukiharu; Saitoh, Yuji; Okamoto, Kazuaki; Zhu, Si-Yuan; Shirai, Kaito; Miyamoto, Koji; Arita, Masashi; Nakatake, Masashi; Okuda, Taichi; Ueda, Yoshifumi; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki; Kimura, Akio

    2013-06-12

    We have found a perpendicular magnetic anisotropy of iron adatoms on a surface of the prototypical three-dimensional topological insulator Bi2Se3 by using x-ray magnetic circular dichroism measurements. The orbital magnetic moment of Fe is strongly enhanced at lower coverage, where angle-resolved photoemission spectroscopy shows coexistence of non-trivial topological states at the surface.

  20. Laboratory Experiments on the Generation of Perpendicular, Magnetized Collisionless Shocks by a Laser-Ablated Piston

    NASA Astrophysics Data System (ADS)

    Schaeffer, Derek

    2013-10-01

    Collisionless shocks occur ubiquitously in space plasmas and have been extensively studied insitu by spacecraft, though they are inherently limited in their flexibility. We present laboratory experiments utilizing a highly flexible laser geometry at UCLA to study the generation of magnetized, perpendicular collisionless shocks by a super-Alfvénic laser-ablated piston. Experiments were carried out on the LArge Plasma Device (LAPD), which can create a highly reproducible 20 m long by Ø1 m H or He magnetized (<= 2 kG) ambient plasma. The 100 J Raptor laser was used to ablate perpendicular to the background magnetic field a carbon target embedded in the LAPD plasma. Emission spectroscopy revealed a significant spread between laser debris charge states, consistent with 2D hybrid simulations that show fast-moving, highly ionized debris slipping through the ambient plasma, while slower, lower charge states drive a diamagnetic cavity. The cavity grew to several ion gyroradii and lasted around one gyroperiod, large and long enough to act like a piston by allowing laminar fields at the cavity edge to transfer energy from the debris to the background plasma. This is confirmed by spectroscopy, which shows a reduction in debris velocities relative to a non-magnetic case, and Thomson scattering, which shows an increase in electron densities and temperatures in the ambient plasma. An increase in the intensity of the ambient plasma seen by gated imaging also indicates an energetic population of electrons coincident with the cavity edge, while Stark-broadened ambient lines may indicate strong local electric fields. Magnetic flux probes reveal that the cavity launches whistler waves parallel to the background field, as well as a super-Alfvénic magnetosonic wave along the blowoff axis that has a magnetic field compression comparable to the Alfvenic Mach number, consistent with simulations that suggest a weak collisionless shock was formed. Supported by DOE and DTRA.

  1. Probing structure-property relationships in perpendicularly magnetized Fe/Cu(001) using MXLD and XPD

    SciTech Connect

    Cummins, T.R.; Waddill, G.D.; Goodman, K.W.

    1997-04-01

    Magnetic X-ray Linear Dichroism (MXLD) in Photoelectron Spectroscopy and X-Ray Photoelectron Diffraction (XPD) of the Fe 3p core level have been used to probe the magnetic structure-property relationships of perpendicularly magnetized Fe/Cu(001), in an element-specific fashion. A strong MEXLD effect was observed in the high resolution photoelectron spectroscopy of the Fe 3p at {open_quotes}normal{close_quotes} emission and was used to follow the loss of perpendicular ferromagnetic ordering as the temperature was raised toward room temperature. In parallel with this, {open_quotes}Forward Focussing{close_quotes} in XPD was used as a direct measure of geometric structure in the overlayer. These results and the implications of their correlation will be discussed. Additionally, an investigation of the effect of Mn doping of the Fe/Cu(001) will be described. These measurements were performed at the Spectromicroscopy Facility (Beamline 7.0.1) of the Advanced Light Source.

  2. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer.

    PubMed

    Suzuki, K Z; Ranjbar, R; Okabayashi, J; Miura, Y; Sugihara, A; Tsuchiura, H; Mizukami, S

    2016-07-26

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm(3) and magnetisation below 500 emu/cm(3); these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  3. Controlling domain wall nucleation and injection through focussed ion beam irradiation in perpendicularly magnetized nanowires

    NASA Astrophysics Data System (ADS)

    Beguivin, A.; Petit, D. C. M. C.; Mansell, R.; Cowburn, R. P.

    2017-01-01

    Using Ga+ focussed ion beam irradiation of Ta/Pt/CoFeB/Pt perpendicularly magnetized nanowires, the nucleation and injection fields of domain walls into the nanowires is controlled. The nucleation and injection fields can be varied as a function of dose, however, the range of injection fields is found to be limited by the creation of a step in anisotropy between the irradiated and unirradiated regions. This can be altered by defocussing the beam, which allows the injection fields to be further reduced. The ability to define an arbitrary dose profile allows domain walls to be injected at different fields either side of an asymmetrically irradiated area, which could form the initial stage of a logic device. The effect of the thickness of the magnetic layer and the thickness of a Ta underlayer on the dose required to remove the perpendicular anisotropy is also studied and is seen that for similar Ta underlayers the dose is determined by the thickness of the magnetic layer rather than its anisotropy. This finding is supported by some transport of ions in matter simulations.

  4. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    NASA Astrophysics Data System (ADS)

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-07-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  5. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    PubMed Central

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-01-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3; these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ. PMID:27457186

  6. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Lequeux, Steven; Sampaio, Joao; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hitoshi; Yuasa, Shinji; Grollier, Julie

    2016-08-01

    Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation.

  7. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy.

    PubMed

    Lequeux, Steven; Sampaio, Joao; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hitoshi; Yuasa, Shinji; Grollier, Julie

    2016-08-19

    Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation.

  8. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

    PubMed Central

    Lequeux, Steven; Sampaio, Joao; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hitoshi; Yuasa, Shinji; Grollier, Julie

    2016-01-01

    Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation. PMID:27539144

  9. Controlled pinning and depinning of domain walls in nanowires with perpendicular magnetic anisotropy.

    PubMed

    Gerhardt, Theo; Drews, André; Meier, Guido

    2012-01-18

    We investigate switching and field-driven domain wall motion in nanowires with perpendicular magnetic anisotropy comprising local modifications of the material parameters. Intentional nucleation and pinning sites with various geometries inside the nanowires are realized via a local reduction of the anisotropy constant. Micromagnetic simulations and analytical calculations are employed to determine the switching fields and to characterize the pinning potentials and the depinning fields. Nucleation sites in the simulations cause a significant reduction of the switching field and are in excellent agreement with analytical calculations. Pinning potentials and depinning fields caused by the pinning sites strongly depend on their shapes and are well explained by analytical calculations.

  10. Strong Perpendicular Magnetic Anisotropy in CoFeB/Pd Multilayers

    NASA Astrophysics Data System (ADS)

    Jung, Jong Ho; Jeong, Boram; Lim, Sang Ho; Lee, Seong-Rae

    2010-02-01

    The strong perpendicular magnetic anisotropy (PMA), indicated by a large coercivity of 590 Oe, is obtained in CoFeB/Pd multilayers through a systematic study that involves using various substrates (Si, glass, sapphire, and MgO) and seed layers (Al and Ta) and also varying the thickness of the seed layer. The PMA is nearly independent of the substrate when Al is used as a seed layer, but the dependence increases significantly with increasing seed layer thickness. The behavior becomes rather complicated for the multilayers with a Ta seed layer, showing a large substrate dependence and a large seed layer thickness dependence.

  11. Cosmic-ray streaming perpendicular to the mean magnetic field. II - The gyrophase distribution function

    NASA Technical Reports Server (NTRS)

    Forman, M. A.; Jokipii, J. R.

    1978-01-01

    The distribution function of cosmic rays streaming perpendicular to the mean magnetic field in a turbulent medium is reexamined. Urch's (1977) discovery that in quasi-linear theory, the flux is due to particles at 90 deg pitch angle is discussed and shown to be consistent with previous formulations of the theory. It is pointed out that this flux of particles at 90 deg cannot be arbitrarily set equal to zero, and hence the alternative theory which proceeds from this premise is dismissed. A further, basic inconsistency in Urch's transport equation is demonstrated, and the connection between quasi-linear theory and compound diffusion is discussed.

  12. Generic suppression of conductance quantization of interacting electrons in graphene nanoribbons in a perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Shylau, A. A.; Zozoulenko, I. V.; Xu, H.; Heinzel, T.

    2010-09-01

    The effects of electron interaction on the magnetoconductance of graphene nanoribbons (GNRs) are studied within the Hartree approximation. We find that a perpendicular magnetic field leads to a suppression instead of an expected improvement of the quantization. This suppression is traced back to interaction-induced modifications of the band structure leading to the formation of compressible strips in the middle of GNRs. It is also shown that the hard-wall confinement combined with electron interaction generates overlaps between forward and backward propagating states, which may significantly enhance backscattering in realistic GNRs. The relation to available experiments is discussed.

  13. Study of grain interactions in perpendicular magnetic recording media using first order reversal curve diagrams

    NASA Astrophysics Data System (ADS)

    Papusoi, C.; Srinivasan, K.; Acharya, R.

    2011-10-01

    It is demonstrated that, for perpendicular magnetic recording (PMR) media, first order reversal curve analysis can independently measure the grain coercive field distribution (or switching field distribution) and the strength of grain interactions, i.e., the demagnetization (mean-field) factor and the dispersion of grain interaction fields around the mean-field. The coercive field distribution is used to determine the intrinsic anisotropy field distribution of PMR media. The temperature dependence of the demagnetization factor shows that the strength of inter-granular exchange coupling is increasing with increasing medium thickness and it is decreasing with increasing temperature.

  14. On the perpendicular propagating modes in the ultra-relativistic weakly magnetized plasma

    SciTech Connect

    Abbas, Gohar; Iqbal, Z.; Murtaza, G.

    2015-03-15

    The dispersion relations for the weakly magnetized perpendicular propagating modes (O-mode, X-mode, and upper hybrid mode) based on the ultra-relativistic Fermi-Dirac distribution function with chemical potential are derived using the Vlasov–Maxwell model. The results are presented in terms of Polylog functions without making any approximation. It is found that as the ratio μ/T is increased, the cutoff points shift downward. A comparison is also performed with the previously derived results for ultra-relativistic Maxwellian distribution.

  15. Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system

    NASA Astrophysics Data System (ADS)

    Lou, Yongle; Zhang, Yuming; Guo, Hui; Xu, Daqing; Yimen, Zhang

    2017-06-01

    The mechanism of perpendicular magnetic anisotropy (PMA) in a MgO-based magnetic tunnel junction (MTJ) has been studied in this article. By comparing the magnetic properties and elementary composition analysis for different CoFeB-based structures, such as Ta/CoFeB/MgO, Ta/CoFeB/Ta and Ru/CoFeB/MgO structures, it is found that a certain amount of Fe-oxide existing at the interface of CoFeB/MgO is helpful to enhance the PMA and the PMA is originated from the interface of CoFeB/MgO. In addition, Ta film plays an important role to enhance the PMA in Ta/CoFeB/MgO structure. Project supported by the National Defense Advance Research Foundation (No. 9140A08XXXXXX0DZ106), the Basic Research Program of Ministry of Education, China (No. JY10000925005), the Scientific Research Program Funded by Shaanxi Provincial Education Department (No.11JK0912), the Scientific Research Foundation of Xi’an University of Science and Technology (No. 2010011), the Doctoral Research Startup Fund of Xi’an University of Science and Technology (No. 2010QDJ029).

  16. Exchange stiffness in ultrathin perpendicularly magnetized CoFeB layers determined using the spectroscopy of electrically excited spin waves

    NASA Astrophysics Data System (ADS)

    Devolder, T.; Kim, J.-V.; Nistor, L.; Sousa, R.; Rodmacq, B.; Diény, B.

    2016-11-01

    We measure the frequencies of spin waves in nm-thick perpendicularly magnetized FeCoB systems, and model the frequencies to deduce the exchange stiffness of this material in the ultrathin limit. For this, we embody the layers in magnetic tunnel junctions patterned into circular nanopillars of diameters ranging from 100 to 300 nm, and we use magneto-resistance to determine which rf-current frequencies are efficient in populating the spin wave modes. Micromagnetic calculations indicate that the ultrathin nature of the layer and the large wave vectors used ensure that the spin wave frequencies are predominantly determined by the exchange stiffness, such that the number of modes in a given frequency window can be used to estimate the exchange stiffness. For 1 nm layers, the experimental data are consistent with an exchange stiffness A = 20 ± 2 pJ/m, which is slightly lower than its bulk counterpart. The thickness dependence of the exchange stiffness has strong implications for the numerous situations that involve ultrathin films hosting strong magnetization gradients, and the micromagnetic description thereof.

  17. Field-dependent perpendicular magnetic anisotropy and interfacial metal-insulator transition in CoFeB/MgO systems

    NASA Astrophysics Data System (ADS)

    Barsukov, Igor; Fu, Yu; Safranski, C.; Chen, Yu-Jin; Youngblood, B.; Goncalves, A.; Sampaio, L.; Arias, R.; Spasova, M.; Farle, M.; Krivorotov, I.

    2015-03-01

    The CoFeB/MgO systems play a central role in magnetic tunnel junction devices due to the high tunneling magnetoresistance ratio. A strong perpendicular anisotropy (PMA) and voltage-controlled anisotropy are beneficial for spintronics application. We study PMA in thin films of Ta/Co20Fe60B20/MgO in the thickness range of 0.9-2.5 nm and find that it can be best described by the first two order terms. Surprisingly, we find PMA to be strongly field-dependent. Our results show that the field dependence has significant implications for determining and customizing magnetic anisotropy in spintronic applications. Our data suggest that it can be caused by an inhomogeneous interfacial spin pinning with a possibly ferrimagnetic phase at the CoFeB/MgO interface. We perform magnetometry and transport measurements and find a magnetization peak and resistance transitions at 160K, which are consistent with the presence of an interfacial oxide phase undergoing a Morin-like transition.

  18. Pulse-voltage-driven dynamical switching of perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt thin film

    NASA Astrophysics Data System (ADS)

    Nguyen, Thi Van Anh; Shiratsuchi, Yu; Nakatani, Ryoichi

    2017-08-01

    In this study, the pulse-voltage-driven dynamical switching of perpendicular exchange bias in a Pt/Co/Au/Cr2O3/Pt thin film observed at pulse amplitudes exceeding the DC switching threshold is investigated. The switching time decreases with increasing pulse amplitude, reaching values below 10 ns at an amplitude two times higher than the above threshold. Conversely, several hundreds of nanoseconds is required for switching at amplitudes close to the threshold, suggesting that the switching mechanism is dominated by the motion of magnetic domains of the antiferromagnetic layer.

  19. The study of perpendicular magnetic anisotropy and Boron diffusion in Ta--CoFeB--MgO--CoFeB--Ta magnetic tunnel junction using polarized neutron reflectometry

    NASA Astrophysics Data System (ADS)

    Lauter, Valeria; Ambaye, H.; Zhu, T.; Yang, Y.; Yu, R. C.; Xiao, J. Q.

    2013-03-01

    The current-induced spin transfer torque (STT) plays an important role in spintronic devices. However, the level of current density needed to reorient the magnetization is presently too high for most commercial applications, and reducing the current density is the challenging basis for recent research in spintronics. The magnetic tunnel junction (MTJ) with a perpendicular magnetic anisotropy (PMA) enables a small critical current density for current-induced magnetization switching and provides a pathway for such STT devices. We investigated the origin of PMA in CoFeB sandwiched by MgO and Ti layers using the anomalous Hall effect (AHE) and polarized neutron reflectometry (PNR). It is found that the PMA properties of CoFeB layers deposited above and under MgO layer are different and PNR measurements confirmed that a large PMA in the CoFeB above MgO layer is related to its low magnetization. From PNR experiments, we obtained the details of the magnetic and structural depth profiles inside the film. Using the sensitivity of neutrons to the absorption cross-section of boron, we unambiguously determined the depth profile of the boron distribution and showed that after annealing, most of the boron diffused to form a 2-nm-thick interface layer between the CoFeB and tantalum layers. Research at ORNL SNS was sponsored by BES and DOE.

  20. Magnetic transition from dot to antidot regime in large area Co/Pd nanopatterned arrays with perpendicular magnetization.

    PubMed

    Krupinski, M; Mitin, D; Zarzycki, A; Szkudlarek, A; Giersig, M; Albrecht, M; Marszałek, M

    2017-02-24

    We have studied the transition between two different magnetization reversal mechanisms for thin Co/Pd multilayers with perpendicular magnetic anisotropy, appearing in magnetic dot and antidot arrays, which were prepared by nanosphere lithography. Various ordered arrays of nanostuctures, both magnetic dots and antidots, were created by varying size and distance between the nanospheres employing RF-plasma etching. We have shown that the coercivity values reach a maximum for the array of antidots with a separation length close to the domain wall width. In this case, each area between three adjacent holes corresponds to a single domain configuration, which can be switched individually. On the contrary, small hole sizes and large volume of material between them results in domain wall propagation throughout the system accompanied by strong domain wall pinning at the holes. We have also shown the impact of edge effects on the magnetic anisotropy energy.

  1. Magnetic transition from dot to antidot regime in large area Co/Pd nanopatterned arrays with perpendicular magnetization

    NASA Astrophysics Data System (ADS)

    Krupinski, M.; Mitin, D.; Zarzycki, A.; Szkudlarek, A.; Giersig, M.; Albrecht, M.; Marszałek, M.

    2017-02-01

    We have studied the transition between two different magnetization reversal mechanisms for thin Co/Pd multilayers with perpendicular magnetic anisotropy, appearing in magnetic dot and antidot arrays, which were prepared by nanosphere lithography. Various ordered arrays of nanostuctures, both magnetic dots and antidots, were created by varying size and distance between the nanospheres employing RF-plasma etching. We have shown that the coercivity values reach a maximum for the array of antidots with a separation length close to the domain wall width. In this case, each area between three adjacent holes corresponds to a single domain configuration, which can be switched individually. On the contrary, small hole sizes and large volume of material between them results in domain wall propagation throughout the system accompanied by strong domain wall pinning at the holes. We have also shown the impact of edge effects on the magnetic anisotropy energy.

  2. Large enhanced perpendicular magnetic anisotropy in CoFeB/MgO system with the typical Ta buffer replaced by an Hf layer

    NASA Astrophysics Data System (ADS)

    Liu, T.; Cai, J. W.; Sun, Li

    2012-09-01

    By systematically comparing the magnetic properties of the Ta/CoFeB/Ta and MgO/CoFeB/MgO structures with and without a submonolayer of MgO, Ta, V, Nb, Hf and W inserted in the middle of the CoFeB layer, we have proved that the observed perpendicular magnetic anisotropy (PMA) in Ta/CoFeB/MgO sandwiches is solely originated from the CoFeB/MgO interface with the Ta buffer acting to enhance the CoFeB/MgO interface anisotropy significantly. Moreover, replacing Ta with Hf causes the CoFeB/MgO interfacial PMA further enhanced by 35%, and the CoFeB layer with perpendicular magnetization has a much larger critical thickness accordingly, leaving a wider thickness margin for the CoFeB/MgO-based perpendicular magnetic tunnel junction optimization. Also the sputter deposited thin Hf films are amorphous with low surface roughness. These results will ensure the Hf/CoFeB/MgO more promising material system for PMA device development.

  3. How antiferromagnetism drives the magnetization of a ferromagnetic thin film to align out of plane.

    PubMed

    Wang, Bo-Yao; Hong, Jhen-Yong; Yang, Kui-Hon Ou; Chan, Yuet-Loy; Wei, Der-Hsin; Lin, Hong-Ji; Lin, Minn-Tsong

    2013-03-15

    Interfacial moments of an antiferromagnet are known for their prominent effects of induced coercivity enhancement and exchange bias in ferromagnetic-antiferromagnetic exchange-coupled systems. Here we report that the unpinned moments of an antiferromagnetic face-centered-cubic Mn layer can drive the magnetization of an adjacent Fe film perpendicular owing to a formation of intrinsic perpendicular anisotropy. X-ray magnetic circular dichroism and hysteresis loops show establishment of perpendicular magnetization on Fe/Mn bilayers while temperature was decreased. The fact that the magnitude of perpendicular anisotropy of the Fe layer is enhanced proportionally to the out-of-plane oriented orbital moment of the Mn unpinned layer, rather than that of Fe itself, gives evidence for the Mn unpinned moments to be the origin of the established perpendicular magnetization.

  4. Dot arrays of L1{sub 0}-type FePt ordered alloy perpendicular films fabricated using low-temperature sputter film deposition

    SciTech Connect

    Shimatsu, T.; Aoi, H.; Inaba, Y.; Kataoka, H.; Sayama, J.; Okamoto, S.; Kitakami, O.

    2011-04-01

    Using ultrahigh vacuum sputter film deposition, we fabricated L1{sub 0}-type Fe{sub 50}Pt{sub 50} ordered alloy perpendicular films on MgO(001) single-crystal substrates and 2.5 in. glass disks at low substrate temperatures of 200-350 deg. C. Then we examined the magnetic properties of the dot arrays made from these films. The uniaxial magnetic anisotropy K{sub u} for L1{sub 0}-type FePt films (10 nm in thickness) deposited with a Pd underlayer on MgO(001) substrates reached about 2 x 10{sup 7} erg/cm{sup 3} at the substrate temperature T{sub s} of 200 deg. C, and 3 x 10{sup 7} erg/cm{sup 3} at T{sub s} = 250 deg. C. The order parameter S was about 0.46 at T{sub s} = 300 deg. C. Moreover, K{sub u} for L1{sub 0}-FePt films fabricated on glass disks using MgO/Cr underlayers shows 3.4 x 10{sup 7} erg/cm{sup 3} at T{sub s} = 300 deg. C, which was almost equal to that for FePt single-crystal films deposited on Pd/MgO(001). The switching field distribution {sigma}/H{sub c} for dot arrays made from L1{sub 0}-FePt film [5 nm in thickness, on Pd/MgO(001) at T{sub s} = 250 deg. C] was small; {sigma}/H{sub c}= 0.11 for a dot diameter of 15 nm. This value was smaller than that of hcp-Co{sub 75}Pt{sub 25} dot arrays ({sigma}/H{sub c} = 0.18). The difference was mainly attributable to the degree of the easy axis distribution. This result demonstrates the homogeneous formation of a L1{sub 0}-type ordered structure in the FePt layers.

  5. Perpendicular Localization of Electron Holes by Spatially Inhomogeneous Flows During Magnetic Reconnection*

    NASA Astrophysics Data System (ADS)

    Newman, D. L.; Goldman, M. V.

    2008-12-01

    Bipolar fields signaling the presence of electron phase space holes have been observed in situ by satellites near regions of magnetic reconnection in Earth's magnetopause and magnetotail. In order to identify possible origins for such holes, a recent numerical study [1] employed 1D and 2D electrostatic Vlasov simulations initialized with electron and ion distributions taken from 2D electromagnetic Particle in Cell (PIC) simulations of magnetic reconnection. Both electron-electron instabilities along the X-line and electron-ion (i.e., Buneman) instabilities along the separatrix were found to be viable sources of electron holes. However, long-lived coherent Buneman-driven holes only formed when the destabilizing current was restricted to a narrow channel perpendicular to the local magnetic field vector B. In this presentation we extend the 2D Vlasov study of electron holes driven by unstable distributions to include both e-e and e-i instabilities localized in the direction perpendicular to B. Emphasis will be placed on how the ion/electron mass and temperature ratios (mi/me and Ti/Te) and the magnetization ratios (Ωe/ωe and Ωi/ωi) influence the properties of the resulting electron holes, including their spatial size and aspect ratio. Distributions from recent implicit PIC reconnection simulations [2] will be used to guide the initialization of the Vlasov simulations. *Research supported by NASA, NSF, and DOE. [1] M. V. Goldman, D. L. Newman, and P. L. Pritchett, "Vlasov Simulations of Electron Holes Driven by Particle Distributions from PIC Reconnection Simulations with a Guide Field," submitted to Geophys.~Res.~Lett. (2008). [2] A. Divin, G. Lapenta, D. L. Newman and M. V. Goldman, "Implicit PIC Simulations of Guide Field Magnetic Reconnection," this meeting.

  6. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Kondo Resonance Splitting in a Quantum Dot with Perpendicular Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Peng, Ju; Yu, Hua-Ling; Wang, Xia-Ling; Chen, Zhi-Gao

    2009-12-01

    Using the nonequilibrium Green's function technique, we investigate the Kondo effect in the quantum dot with perpendicular magnetic fields, in which one is the Zeeman splitting lies in the z-direction and the other is the spin flip points at the x-direction. It is found whatever one or two magnetic fields are applied, the local density of states (LDOS) will split into two peaks. The positions of two Kondo resonance peaks are determined by Zeeman energy Δ when J = 0, and by when J ≠ 0.

  7. Asymmetric driven dynamics of Dzyaloshinskii domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Sánchez-Tejerina, L.; Alejos, Ó.; Martínez, E.; Muñoz, J. M.

    2016-07-01

    The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii-Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current.

  8. Controlling magnetic anisotropy in epitaxial FePt(001) films

    SciTech Connect

    Lu Zhihong; Walock, M. J.; LeClair, P.; Butler, W. H.; Mankey, G. J.

    2009-07-15

    Epitaxial equiatomic Fe{sub 50}Pt{sub 50} thin films with a variable order parameter ranging from 0 to 0.9 and Fe{sub 100-x}Pt{sub x} thin films with x ranging from 33 to 50 were deposited on MgO (001) substrates by dc sputtering. A seed layer consisting of nonmagnetic Cr (4 nm)/Pt (12 nm) was used to promote the crystallinity of the magnetic films. The crystal structure and magnetic properties were gauged using x-ray diffraction and magnetometry. The magnetic anisotropy can be controlled by changing the order parameter. For Fe{sub 100-x}Pt{sub x} films, the increase in Fe composition leads to an increase in coercivity in the hard axis loop and causes a loss of perpendicular anisotropy.

  9. Experimental study of playback giant magnetic resonance head nonlinearity in perpendicular recording

    NASA Astrophysics Data System (ADS)

    Luo, P.; Stoev, K.; Liu, F.; Vadde, A.; Gibbons, M.; Lederman, M.; Re, M.

    2003-05-01

    In this article, nonlinear distortions of the playback giant magnetic resonance (GMR) sensor in perpendicular recording are characterized in both time and frequency domains. We use three perpendicular media with different Mrt (0.46, 0.6, and 0.8 emu/cm2) and two groups of similar magnetic-read width (MRW) but different junction type [contiguous junction (CJ) and lead-over-lay (LOL)] GMR heads. Square-wave patterns at moderate densities are recorded to minimize NLTS, partial erasure, and transition broadening effects. Both time- and frequency-domain measurements indicate that the LOL-type GMR heads show playback nonlinearity (7%-23%), while the CJ-type GMR heads do not. Micromagnetic simulation is utilized to understand the hard bias field with different junction designs. The result indicates that the hard bias (HB) field in LOL type (HB field ˜6.9 Oe) at the air bearing surface (ABS) and stripe center is much lower than that in CJ type (HB field ˜54.0 Oe). Therefore, the free layer with large HB-HB distance will be more susceptible to saturation.

  10. Coupled Néel domain wall motion in sandwiched perpendicular magnetic anisotropy nanowires.

    PubMed

    Purnama, I; Kerk, I S; Lim, G J; Lew, W S

    2015-03-04

    The operating performance of a domain wall-based magnetic device relies on the controlled motion of the domain walls within the ferromagnetic nanowires. Here, we report on the dynamics of coupled Néel domain wall in perpendicular magnetic anisotropy (PMA) nanowires via micromagnetic simulations. The coupled Néel domain wall is obtained in a sandwich structure, where two PMA nanowires that are separated by an insulating layer are stacked vertically. Under the application of high current density, we found that the Walker breakdown phenomenon is suppressed in the sandwich structure. Consequently, the coupled Néel domain wall of the sandwich structure is able to move faster as compared to individual domain walls in a single PMA nanowire.

  11. Effect of perpendicular magnetic field on bubble-like magnetic solitons driven by spin-polarized current with Dzyaloshinskii-Moriya interaction

    NASA Astrophysics Data System (ADS)

    Song, Chengkun; Jin, Chendong; Zhang, Senfu; Chen, Shujun; Wang, Jianbo; Liu, Qingfang

    2016-11-01

    The topological properties of bubble-like magnetic solitons can be modified by interfacial Dzyaloshinskii-Moriya interaction (DMI). In this paper, the dynamic responses of bubble-like magnetic solitons nucleated in the free layer of the spin-torque nano-oscillators (STNOs) are investigated in the presence of DMI and the perpendicular magnetic field by using micromagnetic simulations. We observed that the oscillation frequency of bubble-like magnetic solitons can be manipulated by the perpendicular magnetic field. Moreover, the magnetic structures keep stable in small DMI. With an increase in the DMI strength, rich kinds of bubble-like magnetic solitons appear at different spin-polarized current and perpendicular magnetic field. These results provide a further understanding of bubble-like magnetic solitons structures and direct applications in STNOs.

  12. Magnetic properties and anisotropic coercivity in nanogranular films of Co/Al2O3 above the percolation limit

    NASA Astrophysics Data System (ADS)

    Kulyk, M. M.; Kalita, V. M.; Lozenko, A. F.; Ryabchenko, S. M.; Stognei, O. V.; Sitnikov, A. V.; Korenivski, V.

    2014-08-01

    Magnetic properties of nanogranular ferromagnetic Co/Al2O3 films with 74.5 at% Co, which is above the percolation limit, are investigated. It is established that the films have perpendicular magnetic anisotropy and a weaker in-plane anisotropy. The magnetization curves show that the film consists of two magnetic components: a dominating contribution from magneto-anisotropic isolated grains with the anisotropy axis perpendicular to the film plane and a weaker contribution from the percolated part of the film. This two-component magnetic composition of the films, with the dominating contribution from the nanograins, is confirmed by transmission electron microscopy as well as by ferromagnetic resonance spectroscopy. It is further established that the coercive field of the film is almost entirely determined by the percolated part of the film. In this, the angular dependence of the coercive force, Hc (θH), is essentially proportional to sin-1θH, where θH is the angle between the applied field and the film's normal. However, for θH → 0, Hc (θH) there is a narrow minimum with Hc approaching zero. Such non-linear dependence agrees well with our modelling results for a two-component magnetic system of the film, where the non-percolated nanograins have a distinct perpendicular anisotropy. The reported results should be important for in-depth characterization and understanding the magnetism and anisotropy in inhomogeneous systems as well as for applications, specifically in perpendicular magnetic recording.

  13. Fabrication and characterization of focused-ion-beam trimmed write heads for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Clinton, T. W.; van der Heijden, P. A. A.; Karns, D. C.; Yu, J.; Park, C. M.; Batra, S.

    2002-05-01

    A focused ion beam (FIB) has been used to trim write heads for perpendicular magnetic recording using untrimmed HGA-level longitudinal heads. The ion-beam imaging of the write head during FIB processing was minimized to limit exposure of the active magnetic material at the ABS to a 30 keV Ga+ ion dose of less than 1014Ga+/cm2 (≈10-13 C/μm2) (the GMR reader was never exposed), which is significantly below levels where magnetic properties have been observed to degrade [W. M. Kaminsky et al., Appl. Phys. Lett. 78, 1589 (2001)]. The corresponding recording characteristics and spatial profiles of written tracks have been measured on a spin stand and a magnetic force microscope (MFM). Recording performance, such as SNR, and pulse shape of transitions, for example, as a function of head design and FIB processing is discussed, which compares very favorably to the performance of untrimmed heads. The MFM images reveal curvature in the magnetic transitions (transition smile) when writing with a single-pole writer with a straight trailing edge. Conversely, we demonstrate straight transitions using a single-pole writer with a curved trailing edge. Our results demonstrate the robustness of FIB-trimmed heads down to sub-100-nm length scales.

  14. Shift registers based on magnetic domain wall ratchets with perpendicular anisotropy.

    PubMed

    Franken, J H; Swagten, H J M; Koopmans, B

    2012-08-01

    The movement of magnetic domain walls can be used to build a device known as a shift register, which has applications in memory and logic circuits. However, the application of magnetic domain wall shift registers has been hindered by geometrical restrictions, by randomness in domain wall displacement and by the need for high current densities or rotating magnetic fields. Here, we propose a new approach in which the energy landscape experienced by the domain walls is engineered to favour a unidirectional ratchet-like propagation. The domain walls are defined between domains with an out-of-plane (perpendicular) magnetization, which allows us to route domain walls along arbitrary in-plane paths using a time-varying applied magnetic field with fixed orientation. In addition, this ratchet-like motion causes the domain walls to lock to discrete positions along these paths, which is useful for digital devices. As a proof-of-principle experiment we demonstrate the continuous propagation of two domain walls along a closed-loop path in a platinum/cobalt/platinum strip.

  15. Momentum transfer resolved memory in a magnetic system with perpendicular anisotropy

    SciTech Connect

    Seu, Keoki; Roy, Sujoy; Su, Run; Parks, Daniel; Shipton, Erik; Fullerton, Eric; Kevan, Stephen

    2011-01-28

    We have used resonant, coherent soft x-ray scattering to measure wave vector re- solved magnetic domain memory in Co/Pd multilayers. The technique uses angular cross correlation functions and can be applied to any system with circular annuli of constant values of scattering wave vector q. In our Co/Pd film, the memory exhibits a maximum at q = 0.0384 nm-1 near initial reversal that decreases in magnitude as the magnetization is further reversed. The peak is attributed to bubble domains that nucleate reproducibly near initial reversal and which grow into a labyrinth domain structure that is not reproduced from one magnetization cycle to the next.

  16. Influence of shape, size and internal structure on magnetic properties of core-edge nanodots with perpendicular anisotropy

    SciTech Connect

    Milińska, E. Wawro, A.

    2014-11-21

    The properties of perpendicularly magnetized isolated nanodots different in shape, size, and internal structure are simulated by micromagnetic calculations. Investigated dots are magnetically uniform, or they are composed of a core and an edge characterized by different anisotropy—stronger or weaker than that of the core. Based on calculated hysteresis loops, we discuss in details the magnetization reversal processes, stability of magnetic structures, and spin configurations in the dots.

  17. Contribution of individual interfaces in the MgO/Co/Pd trilayer to perpendicular magnetic anisotropy upon annealing

    SciTech Connect

    Kim, Minseok; Kim, Sanghoon; Ko, Jungho; Hong, Jongill

    2015-03-09

    The contribution of each interface of the MgO/Co/Pd trilayer to the perpendicular magnetic anisotropy (PMA) was studied by changing chemical and crystalline structures through annealing. We found that volumetric anisotropy in the MgO/Co/Pd trilayer was significantly increased due to enhanced magnetoelastic anisotropy caused by stress built up most likely at the MgO/Co interface during annealing. When the trilayer was annealed at 400 °C, the alloy formation at the Co/Pd interface additionally increased the volumetric anisotropy. Our x-ray magnetic circular dichroism study supported that those structural modifications led to an increase in the orbital moment through spin-orbit coupling (SOC) along the film normal two times larger than that of the as-deposited trilayer, thereby enhancing PMA greatly. Our experimental results prove that the Co/Pd interface, rather than the MgO/Co interface, plays an essential role in inducing strong PMA in the trilayer. The precise investigation of annealing effect on both volumetric and interfacial anisotropies can provide a methodological solution to improve the SOC of the trilayer that can serve as the core unit of spintronic devices.

  18. Thin film metallic sensors in an alternating magnetic field for magnetic nanoparticle hyperthermia cancer therapy

    NASA Astrophysics Data System (ADS)

    Hussein, Z. A.; Boekelheide, Z.

    In magnetic nanoparticle hyperthermia in an alternating magnetic field for cancer therapy, it is important to monitor the temperature in situ. This can be done optically or electrically, but electronic measurements can be problematic because conducting parts heat up in a changing magnetic field. Microfabricated thin film sensors may be advantageous because eddy current heating is a function of size, and are promising for further miniaturization of sensors and fabrication of arrays of sensors. Thin films could also be used for in situ magnetic field sensors or for strain sensors. For a proof of concept, we fabricated a metallic thin film resistive thermometer by photolithographically patterning a 500Å Au/100Å Cr thin film on a glass substrate. Measurements were taken in a solenoidal coil supplying 0.04 T (rms) at 235 kHz with the sensor parallel and perpendicular to the magnetic field. In the parallel orientation, the resistive thermometer mirrored the background heating from the coil, while in the perpendicular orientation self-heating was observed due to eddy current heating of the conducting elements by Faraday's law. This suggests that metallic thin film sensors can be used in an alternating magnetic field, parallel to the field, with no significant self-heating.

  19. Perpendicular magnetic anisotropy of Ir/CoFeB/MgO trilayer system tuned by electric fields

    NASA Astrophysics Data System (ADS)

    Skowroński, Witold; Nozaki, Takayuki; Shiota, Yoichi; Tamaru, Shingo; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige

    2015-05-01

    The perpendicular magnetic anisotropy of an Ir/CoFeB/MgO trilayer was investigated after annealing at temperatures ranging from 200 to 350 °C. In the trilayer system annealed at 300 °C, we measured an interface anisotropy energy of 1.9 mJ/m2. Further annealing led to mixing of the buffer and ferromagnet, degrading the properties of the latter. In addition, we show the dependence of the magnetic anisotropy on the bias voltage. The presented system is important for the development of perpendicular magnetic tunnel junctions for storage applications.

  20. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

    PubMed Central

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L.; Zhang, Qianfan; Zhao, Weisheng

    2015-01-01

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM. PMID:26656721