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Sample records for perpendicular magnetic films

  1. HITPERM soft magnetic underlayers for perpendicular thin film media

    NASA Astrophysics Data System (ADS)

    Kumar, S.; Ohkubo, T.; Laughlin, D. E.

    2002-05-01

    In this work, a class of nanocrystalline alloys, HITPERM (Fe, Co)-M-B-Cu (M=Zr, Hf, Nb, and etc.) found to exhibit excellent soft-magnetic properties in bulk were used as soft-magnetic underlayers for perpendicular thin film media. A Ti intermediate layer was used to promote a (00ṡ2) texture and exchange de-couple the magnetic layer (CoCrPt) from the soft-magnetic underlayer. Specimens were deposited at both room and elevated temperature (˜ 250 °C). The results of x-ray diffraction and transmission electron microscope structural studies, along with magnetic properties are presented.

  2. HITPERM soft-magnetic underlayers for perpendicular thin film media

    NASA Astrophysics Data System (ADS)

    Kumar, S.; Laughlin, D. E.

    2003-05-01

    A class of nanocrystalline alloys, HITPERM (Fe, Co)-M-B-Cu (M=Zr,Hf,Nb, etc.) found to exhibit excellent soft-magnetic properties is being studied for use as a soft-magnetic underlayer for perpendicular recording media. Previously, we reported that HITPERM films of ˜100 nm thickness sputtered at room temperature (RT) and at ˜2.3 W/cm2 power density had exhibited an amorphous microstructure, which had turned mixed nanocrystalline when prepared at ˜250 °C. However, nanoparticles of FeCo have now been crystallized even at RT without the application of heat, by increasing the sputtering power density to ˜4.5 W/cm2. This dramatically improved the 4πMs while still maintaining a low coercivity. There was a further slight increase in the 4πMs at ˜6.8 W/cm2. Moreover, these soft-magnetic properties were maintained even when the substrate temperature was subsequently raised to ˜250 °C. Transmission electron microscopy studies showed the presence of relatively small nanocrystals of the ferromagnetic α'-FeCo (or α-FeCo) phase alone, for both sets of films. Previously, we had reported that the CoCrPt magnetic layer grew with a strong (00ṡ2) texture on amorphous HITPERM. We have now seen that with a thin Ti intermediate layer (˜5 nm) the CoCrPt layer maintained a strong (00ṡ2) texture even on the nanocrystalline HITPERM. Thus, due to their particular nanocrystalline nature, these HITPERM films exhibit much better soft-magnetic properties, while still leading to strong (00ṡ2) texture on the CoCrPt magnetic layer.

  3. Magnetization reversal mechanism of Nd-Fe-B films with perpendicular magnetic anisotropy

    SciTech Connect

    Liu Xiaoxi; Ishida, Go; Morisako, Akimitsu

    2011-04-01

    The microstructure and magnetic properties of Nd-Fe-B films with thicknesses from 100 nm to 3 nm have been investigated. All the films show excellent perpendicular magnetic anisotropy with a squareness ratio of 1 in the perpendicular direction and almost zero coercivity in the in-plane direction. Of particular interest is that the initial magnetization curves sensitively depended on the film thickness. Films thicker than 15 nm show steep initial magnetization curve. Although the films have coercivities larger than 21 kOe, the films can be fully magnetized from the thermally demagnetized state with a field as small as 5 kOe. With the decrease of film thickness to 5 nm, the initial magnetization curve becomes flat. The evolution of initial magnetization curves with film thickness can be understood by the microstructure of the films. Films with thickness of 15 nm show close-packed grains without any intergranular phases. Such microstructures lead to steep initial magnetization curves. On the other hand, when the film thickness decreased to 3 nm, the film thickness became nonuniform. Such microstructure leads to flat initial magnetization curves.

  4. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  5. Magnetic Thin Films for Perpendicular Magnetic Recording Systems

    NASA Astrophysics Data System (ADS)

    Sugiyama, Atsushi; Hachisu, Takuma; Osaka, Tetsuya

    In the advanced information society of today, information storage technology, which helps to store a mass of electronic data and offers high-speed random access to the data, is indispensable. Against this background, hard disk drives (HDD), which are magnetic recording devices, have gained in importance because of their advantages in capacity, speed, reliability, and production cost. These days, the uses of HDD extend not only to personal computers and network servers but also to consumer electronics products such as personal video recorders, portable music players, car navigation systems, video games, video cameras, and personal digital assistances.

  6. Magnetic properties of ultrathin tetragonal Heusler D022-Mn3Ge perpendicular-magnetized films

    NASA Astrophysics Data System (ADS)

    Sugihara, A.; Suzuki, K. Z.; Miyazaki, T.; Mizukami, S.

    2015-05-01

    We investigated the crystal structure and magnetic properties of Manganese-germanium (Mn3Ge) films having the tetragonal D022 structure, with varied thicknesses (5-130 nm) prepared on chromium (Cr)-buffered single crystal MgO(001) substrates. A crystal lattice elongation in the in-plane direction, induced by the lattice mismatch between the D022-Mn3Ge and the Cr buffer layer, increased with decreasing thickness of the D022-Mn3Ge layer. The films exhibited clear magnetic hysteresis loops with a squareness ratio close to unity, and a step-like magnetization reversal even at a 5-nm thickness under an external field perpendicular to the film's plane. The uniaxial magnetic anisotropy constant of the films showed a reduction to less than 10 Merg/cm3 in the small thickness range (≤20 nm), likely due to the crystal lattice elongation in the in-plane direction.

  7. High perpendicular magnetic anisotropy in D022-Mn3+xGe tetragonal Heusler alloy films

    NASA Astrophysics Data System (ADS)

    Sugihara, A.; Mizukami, S.; Yamada, Y.; Koike, K.; Miyazaki, T.

    2014-03-01

    We prepared D022-Mn3+xGe (-0.67 ≤ x ≤ 0.35) epitaxial thin films on MgO(001) substrates with Cr(001) buffer layers and systematically investigated the dependence of their perpendicular magnetic anisotropy constant, saturation magnetization, coercivity, and tetragonal axial ratio (c/a) on their composition and substrate temperature. Single-phase D022 crystal structures were formed in films with compositions of 0 ≤ x ≤ 0.35, prepared at 400 °C. The D022-Mn3Ge films exhibited perpendicular magnetization with a magnetic squareness close to unity. Performing magnetic torque measurements at an applied field of 140 kOe, we estimated a perpendicular magnetic anisotropy constant of 11.8 ± 0.5 Merg/cm3, the highest and the most reliable value yet reported.

  8. Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy.

    PubMed

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J S; Porod, Wolfgang; Field, Stuart B; Tang, Jinke; Marconi, Mario C; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-01-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

  9. Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

    PubMed Central

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-01-01

    As an in-plane charge current flows in a heavy metal film with spin–orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin–orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field. PMID:27581060

  10. Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy.

    PubMed

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J S; Porod, Wolfgang; Field, Stuart B; Tang, Jinke; Marconi, Mario C; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-01-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field. PMID:27581060

  11. Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; Demann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J. S.; Porod, Wolfgang; Field, Stuart B.; Tang, Jinke; Marconi, Mario C.; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-09-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field.

  12. Quasilogarithmic magnetic viscosity in perpendicularly anisotropic Nd-Fe-B films

    NASA Astrophysics Data System (ADS)

    Yao, Q.; Grössinger, R.; Liu, W.; Cui, W. B.; Yang, F.; Zhao, X. G.; Zhang, Z. D.

    2012-09-01

    The quasilogarithmic magnetic viscosity of the perpendicularly anisotropic Nd-Fe-B films is determined by measuring the time dependent magnetization in coercive fields at 300 K-4.2 K. The distribution of energy barrier heights in the films is believed to be the origin of this stretched exponential magnetic relaxation. Another feature exhibited in the anisotropic Nd-Fe-B films is the nonmonotonic temperature dependence of the magnetic viscosity coefficients, which are extracted by the decay slopes of the linear quasilogarithmic magnetic aftereffect curves.

  13. Field orientation dependence of magnetization reversal in thin films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Fallarino, Lorenzo; Hovorka, Ondrej; Berger, Andreas

    2016-08-01

    The magnetization reversal process of hexagonal-close-packed (hcp) (0001) oriented Co and C o90R u10 thin films with perpendicular magnetic anisotropy (PMA) has been studied as a function of temperature and applied magnetic field angle. Room temperature pure cobalt exhibits two characteristic reversal mechanisms. For angles near in-plane field orientation, the magnetization reversal proceeds via instability of the uniform magnetic state, whereas in the vicinity of the out-of-plane (OP) orientation, magnetization inversion takes place by means of domain nucleation. Temperature dependent measurements enable the modification of the magnetocrystalline anisotropy and reveal a gradual disappearance of the domain nucleation process during magnetization reversal for elevated temperatures. Ultimately, this suppression of the domain nucleation process leads to the exclusive occurrence of uniform state instability reversal for all field orientations at sufficiently high temperature. Comparative magnetic measurements of C o90R u10 alloy samples allow the identification and confirmation of the high temperature remanent magnetization state of cobalt as an OP stripe domain state despite the reduction of magnetocrystalline anisotropy. Detailed micromagnetic simulations supplement the experimental results and corroborate the physical understanding of the temperature dependent behavior. Moreover, they enable a comprehensive identification of the complex energy balance in magnetic films with PMA, for which three different magnetic phases occur for sufficiently high anisotropy values, whose coexistence point is tricritical in nature.

  14. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films.

    PubMed

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H B; Wang, J; Ma, B; Jin, Q Y

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  15. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films.

    PubMed

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H B; Wang, J; Ma, B; Jin, Q Y

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  16. Perpendicular magnetic anisotropy of Mn4N films fabricated by reactive sputtering method

    NASA Astrophysics Data System (ADS)

    Kabara, Kazuki; Tsunoda, Masakiyo

    2015-05-01

    Manganese nitride films were fabricated on MgO substrates by changing N2 flow ratio into Ar gas ( P N2 ) during reactive sputtering deposition of the films, and their crystal structures and magnetic properties were investigated. Single phased ɛ-Mn4N films were obtained when P N2 was 5%-9%, and the tetragonal lattice distortion was identified in all the Mn4N films (the lattice constant ratio, c/a = 0.99). Perpendicular magnetic anisotropy was observed in all the specimens. The Mn4N film, fabricated with P N2 = 8%, has a low saturation magnetization (Ms = 110 emu/cc) and relatively high magnetic anisotropic energy (Ku = 8.8 × 105 erg/cc). Both Ms and Ku of the films drastically changed with mixing other phases (α-Mn, β-Mn, η-Mn3N2, and possibly γ-Mn) by varying P N2 .

  17. Sputtering of cobalt film with perpendicular magnetic anisotropy on disorder-free graphene

    SciTech Connect

    Jamali, Mahdi; Lv, Yang; Zhao, Zhengyang; Wang, Jian-Ping

    2014-10-15

    Growth of thin cobalt film with perpendicular magnetic anisotropy has been investigated on pristine graphene for spin logic and memory applications. By reduction of the kinetic energy of the sputtered atoms using indirect sputtered deposition, deposition induced defects in the graphene layer have been controlled. Cobalt film on graphene with perpendicular magnetic anisotropy has been developed. Raman spectroscopy of the graphene surface shows very little disorder induced in the graphene by the sputtering process. In addition, upon increasing the cobalt film thickness, the disorder density increases on the graphene and saturates for thicknesses of Co layers above 1 nm. The AFM image indicates a surface roughness of about 0.86 nm. In addition, the deposited film forms a granular structure with a grain size of about 40 nm.

  18. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-07-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  19. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    PubMed Central

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  20. Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

    NASA Technical Reports Server (NTRS)

    Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

    2009-01-01

    L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

  1. Uniaxial ferromagnetic film in magnetic field perpendicular to the easy axis

    NASA Astrophysics Data System (ADS)

    Korneta, W.; Pytel, Z.

    1987-08-01

    The spin model of single domain ferromagnetic film is considered. Only the nearest-neighbor interactions are taken into account. The interactions depend on distances from surfaces. The external magnetic field is applied perpendicular to the easy axis lying in the plane of the film. The thermodynamic behaviour of the model is studied near the second-order ferro-paramagnetic phase transition for the component of the magnetization in the direction of the easy axis. The molecular-field theory is used. The phase diagram and profiles of the order parameter are obtained. Different feasible investigations of the phase transition are compared.

  2. Perpendicular Magnetic Anisotropy in Co-Based Full Heusler Alloy Thin Films

    NASA Astrophysics Data System (ADS)

    Wu, Y.; Xu, X. G.; Miao, J.; Jiang, Y.

    2015-12-01

    Half-metallic Co-based full Heusler alloys have been qualified as promising functional materials in spintronic devices due to their high spin polarization. The lack of perpendicular magnetic anisotropy (PMA) is one of the biggest obstacles restricting their application in next generation ultrahigh density storage such as magnetic random access memory (MARM). How to induce the PMA in Co-based full Heusler alloy thin films has attracted much research interest of scientists. This paper presents an overview of recent progress in this research area. We hope that this paper would provide some guidance and ideas to develop highly spin-polarized Co-based Heusler alloy thin films with PMA.

  3. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-01

    B2-ordered Co2FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering ˜81.2% with a low damping parameter (α) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 °C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co2FeAl films annealed at 350 °C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing α significantly. However, the observed damping of Co2FeAl films was still lower than that of Co60Fe20B20 films prepared at the same thickness and annealing temperature.

  4. Perpendicular magnetic anisotropy in Mn2CoAl thin film

    NASA Astrophysics Data System (ADS)

    Sun, N. Y.; Zhang, Y. Q.; Fu, H. R.; Che, W. R.; You, C. Y.; Shan, R.

    2016-01-01

    Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.

  5. Confined stripe structure in periodically grooved NdCo Films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Martin, Jose I.; Hierro-Rodriguez, Aurelio; Cid, Rosalia; Rodriguez-Rodriguez, Gabriel; Velez, Maria; Alvarez-Prado, Luis M.; Alameda, Jose M.

    2012-02-01

    Magnetic multilayers are broad research field with many interesting phenomena depending on interlayer coupling. Also, since the development of nanolithography techniques, magnetic nanowires and dots have been intensively investigated [1]. Recently, as a combination of these two fields, the concept of magnetic lateral superlattice has emerged: continuous magnetic films with a lateral modulation of their magnetic properties at submicrometric length scale [2]. In this work, we have fabricated amorphous Nd-Co films with perpendicular magnetic anisotropy and a periodic thickness modulation by e-beam lithography and ion milling. Lateral periods range from 2 μm - 500 nm and groove depths from 10 to 30 nm. MFM and Kerr magnetometry have been used for characterization. Lateral patterning modifies the interplay between magnetostatic energy, perpendicular and in plane anisotropy and exchange interaction resulting in confined magnetic stripe structures. The different regimes that appear depending on the size of the periodic thickness modulation relative to the magnetic stripe period will be discussed. [1] J.I Martin et al, JMMM, 256 (2003) 449 [2] S. P. Li et al, PRL 88 (2002) 087202; N. Martin et al, PRB 83 (2010) 174423

  6. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  7. Perpendicular magnetic anisotropy and spin reorientation transition in L1{sub 0} FePt films

    SciTech Connect

    Ahn, Jae Young; Lee, Nyun Jong; Kim, Tae Hee; Lee, J.-H.; Michel, Anny; Eyidi, Dominique

    2011-04-01

    We investigated the thickness and composition dependence of perpendicular magnetic anisotropy (PMA) in L1{sub 0} Fe{sub 1-x}Pt{sub x} (x = 0.4, 0.5, and 0.55) films. The FePt films with different thicknesses of 35 and 70 A were grown at the substrate temperature T{sub s} = 300 deg. C by molecular beam epitaxy coevaporation technique. A (001)-oriented epitaxial L1{sub 0} FePt film was grown on the thin (001)-oriented fcc Pt layer, while a poorly crystallized FePt film was formed on the (111)-textured Pt layer. Our results showed that, at a fixed thickness of 70 A, the PMA of FePt alloy films is enhanced as Pt content increases from 40% to 55%.

  8. Long-lived ultrafast spin precession in manganese alloys films with a large perpendicular magnetic anisotropy.

    PubMed

    Mizukami, S; Wu, F; Sakuma, A; Walowski, J; Watanabe, D; Kubota, T; Zhang, X; Naganuma, H; Oogane, M; Ando, Y; Miyazaki, T

    2011-03-18

    Spin precession with frequencies up to 280 GHz is observed in Mn(3-δ)Ga alloy films with a perpendicular magnetic anisotropy constant K(u)∼15  M erg/cm(3). The damping constant α, characterizing macroscopic spin relaxation and being a key factor in spin-transfer-torque systems, is not larger than 0.008 (0.015) for the δ=1.46 (0.88) film. Those are about one-tenth of α values for known materials with large K(u). First-principles calculations well describe both low α and large K(u) for these alloys.

  9. Co2FeAl films with perpendicular magnetic anisotropy in multilayer structure

    NASA Astrophysics Data System (ADS)

    Li, X. Q.; Xu, X. G.; Yin, S. Q.; Zhang, D. L.; Miao, J.; Jiang, Y.

    2011-01-01

    We have fabricated Co2FeAl (CFA) films with perpendicular magnetic anisotropy (PMA) in a (Co2FeAl/Ni)6 multilayer structure. The effects of underlayer Cu thickness (tCu), Co2FeAl thickness (tCFA) and Ni thickness (tNi) on the magnetic properties have been studied. The PMA is realized with a large anisotropy energy density K = 3.7×106 ergs/cm3, a high squareness Mr/Ms = 1 and a small perpendicular coercivity Hc = 60 Oe, while tCu, tCFA and tNi are 9 nm, 0.2 nm and 0.6 nm respectively. The PMA remains after 300 °C annealing, which demonstrates better thermal stability of the (Co2FeAl/Ni)6 multilayer than that of (Co/Ni)n.

  10. Perpendicular magnetization of Co2FeAl full-Heusler alloy films induced by MgO interface

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Mitani, Seiji; Inomata, Koichiro

    2011-06-01

    The perpendicular magnetization of Co2FeAl (CFA) full-Heusler alloy films was achieved in the structures of CFA/MgO and MgO/CFA with the perpendicular magnetic anisotropy energy density (KU) of 2-3×106 erg/cm3, which can be used as the perpendicular ferromagnetic electrodes of MgO-based magnetic tunnel junctions (MTJs) with high thermal stability at sub-50-nm dimension. The CFA thickness dependence of KU was investigated at different annealing temperatures, indicating that the perpendicular anisotropy of CFA is contributed by the interfacial anisotropy between CFA and MgO. This letter will open up a way for obtaining perpendicular magnetization of Co-based full-Heusler alloys, which is promising for further reduction in the critical current of current induced magnetization switching in MgO-based MTJ nanopillars with perpendicular full-Heusler alloy electrodes.

  11. Perpendicularizing magnetic anisotropy of full-Heusler Co2FeAl films by cosputtering with terbium

    NASA Astrophysics Data System (ADS)

    Li, X. Q.; Xu, X. G.; Zhang, D. L.; Miao, J.; Zhan, Q.; Jalil, M. B. A.; Yu, G. H.; Jiang, Y.

    2010-04-01

    In this letter, we fabricated Co2FeAl films with perpendicular-to-plane magnetic anisotropy by cosputtering with terbium (Tb). The as-prepared (Tb+Co2FeAl) films (TCFA) consists of nanocrystalline L21 Co2FeAl and amorphous alloy of Tb(Co, Fe, and Al). The coercivity field (Hc) of the TCFA films is adjustable from 200 to 800 Oe. After annealing, the Hc decreases to 70 Oe. A perpendicularly magnetized spin valve with the TCFA films as free and reference layers shows a current-perpendicular-to-plane magnetoresistance of 1.8% at room temperature. Our result opens a way to fabricate perpendicularly magnetized full-Heusler alloys and makes it possible to realize faster and simple structured magnetic storage bits in the future.

  12. Gilbert damping parameter characterization in perpendicular magnetized Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Lu, Jiwei; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Wolf, Stuart

    2013-03-01

    Materials with perpendicular magnetic anisotropy(PMA) have gotten extensive recent attention because of their potential application in spintronic devices such as spin transfer torque random access memory (STT-RAM). It was shown that a much lower switching current density(JC) is required to write STT-RAM tunnel junctions with perpendicular magnetic anisotropy ferromagnetic electrodes (p-MTJ). Additionally Heusler alloy Co2FeAl is expected to further reduce JC due to its ultra low Gilbert damping parameter. In our study, Heusler alloy Co2FeAl films were prepared using a Biased Target Ion Beam Deposition (BTIBD) technique. We demonstrated a low Gilbert damping parameter achieved in thick B2-Co2FeAl films. Besides, we achieved an interfacial PMA in ultra thin Co2FeAl films by rapid thermal annealing (RTA) with no external field presented. Annealing conditions were carefully adjusted to maximize the interfacial PMA. However it was noticed that a higher annealing temperature was required for a low damping parameter which to some extent sacrificed the interfacial PMA. We also deposited ultra thin CoFeB films and characterized their damping parameters for comparison. We acknowledge the financial support from DARPA.

  13. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    SciTech Connect

    Lee, Hwachol; Sukegawa, Hiroaki Ohkubo, Tadakatsu; Kasai, Shinya; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-07-20

    Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  14. Anomalous Nernst Effect of Perpendicularly Magnetic Anisotropy TbFeCo Thin Films

    NASA Astrophysics Data System (ADS)

    Ando, Ryo; Komine, Takashi; Hasegawa, Yasuhiro

    2016-07-01

    In this study, we investigated anomalous Nernst effect (ANE) of perpendicularly magnetized TbFeCo thin films with various Tb content, and especially studied the relation between ANE and anomalous Hall effect. As a result, the hysteresis of anomalous Nernst coefficient showed the same behavior as that of anomalous Hall resistivity, and the sign of anomalous Nernst coefficient was consistent with that of anomalous Hall voltage in any Tb content, whereas the Seebeck coefficient and the resistivity were almost constant even if the applied magnetic field was varied. Taking into account of thermoelectric coefficient tensor, it was revealed that the off-diagonal thermopower corresponding to the ANE in TbFeCo thin films is the product of Hall angle and Seebeck coefficient.

  15. Structure and magnetic properties of tetragonal Heusler D022-Mn3Ge compound epitaxial films with high perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Sugihara, A.; Suzuki, K.; Mizukami, S.; Miyazaki, T.

    2015-04-01

    We investigated the structure and magnetic properties of epitaxial films of D022-Mn3Ge tetragonal Heusler like compounds in detail. Epitaxial films with a stoichiometric composition were grown on Cr-buffered single crystalline (0 0 1) MgO substrates using ultra-high vacuum sputtering at different growth temperatures. X-ray diffraction showed that D022-ordered films were formed at growth temperatures of ⩾200 °C. Epitaxial growth was indicated by cross-sectional high-resolution transmission electron microscopy. Nanobeam diffraction patterns from the D022-Mn3Ge film grown at 400 °C suggests the absence of planar defects such as stacking faults and twins in the film. Out-of-plane magnetic hysteresis curves with perfect squareness were observed for the films grown at ⩾300 °C. These films also showed abrupt magnetization reversal at a coercivity of about 1 T, which is higher than that of other thin film materials with perpendicular magnetic anisotropy such as CoPt and FePt. A huge domain diameter in the D022-Mn3Ge films was indicated by the initial magnetization curves that were measured by the polar magneto-optical Kerr effect.

  16. Temperature dependence of perpendicular magnetic anisotropy in CoFeB thin films

    NASA Astrophysics Data System (ADS)

    Fu, Yu; Barsukov, I.; Li, Jing; Gonçalves, A. M.; Kuo, C. C.; Farle, M.; Krivorotov, I. N.

    2016-04-01

    We study perpendicular magnetic anisotropy in thin films of Ta/Co20Fe60B20/MgO by ferromagnetic resonance and find a linear temperature dependence for the first and second order uniaxial terms from 5 to 300 K. Our data suggest the possible hybridization of Fe-O orbitals at the CoFeB/MgO interface for the origin of the first order anisotropy. However, we also find that non-interfacial contributions to the anisotropy are present. An easy-cone anisotropy is found for the entire temperature range in the narrow region of film thicknesses around the spin reorientation transition 1.2-1.35 nm.

  17. Field-dependent perpendicular magnetic anisotropy in CoFeB thin films

    SciTech Connect

    Barsukov, I. Krivorotov, I. N.; Fu, Yu; Gonçalves, A. M.; Sampaio, L. C.; Spasova, M.; Farle, M.; Arias, R. E.

    2014-10-13

    We report ferromagnetic resonance measurements of perpendicular magnetic anisotropy in thin films of Ta/Co{sub 20}Fe{sub 60}B{sub 20}/MgO as a function of the Co{sub 20}Fe{sub 60}B{sub 20} layer thickness. The first and second order anisotropy terms show unexpectedly strong dependence on the external magnetic field applied to the system during the measurements. We propose strong interfacial spin pinning as a possible origin of the field-dependent anisotropy. Our results imply that high-field anisotropy measurements cannot be directly used for quantitative evaluation of zero-field performance parameters of CoFeB-based devices such as spin torque memory.

  18. Perpendicular magnetic anisotropy of CoPt AlN composite film with nano-fiber structure

    NASA Astrophysics Data System (ADS)

    Chen, C. C.; Toyoshima, H.; Hashimoto, M.; Shi, J.; Nakamura, Y.

    2005-06-01

    Co Pt AlN films were prepared by sputtering a Co Pt Al composite target in Ar+N2 atmosphere. Upon thermal annealing at elevated temperatures, fcc CoPt and a-AlN are formed in the films as phases separated from one other. Both phases develop as fiber-like columnar grains vertical to the substrate and with their lateral size less than 10 nm. Because of the shape anisotropy of the magnetic fiber grains the CoPt AlN film shows a perpendicular magnetic anisotropy at a thickness equal to or larger than about 25 nm while the Co TiN [6] and CoPt TiO2 [11] films do not unless their thicknesses reach 50 and 100 nm, respectively. This suggests that both the shape anisotropy of the CoPt magnetic fiber grains and their mutual separation in an a-AlN medium work more effectively in the formation with the perpendicular magnetic anisotropy. Such a perpendicular magnetic anisotropy of the CoPt AlN film associated with the nano-scale feature makes it a very promising candidate for future recording media with ultra-high area density.

  19. Perpendicular Magnetic Anisotropy of Full-Heusler Films in Pt/Co2FeAl/MgO Trilayers

    NASA Astrophysics Data System (ADS)

    Li, Xiaoqi; Yin, Shaoqian; Liu, Yupeng; Zhang, Delin; Xu, Xiaoguang; Miao, Jun; Jiang, Yong

    2011-04-01

    We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable and the anisotropy energy density Ku is 1.3×106 erg/cm3 for the structure with 2 nm Co2FeAl after annealing at 350 °C. The annealing temperature and Co2FeAl thickness greatly affect the PMA. Our results provide an effective way to realize relatively thick perpendicularly magnetized Heusler alloy films.

  20. Effect of aging and annealing on perpendicular magnetic anisotropy of ultra-thin CoPt films

    NASA Astrophysics Data System (ADS)

    Hara, R.; Hayakawa, K.; Ebata, K.; Sugita, R.

    2016-05-01

    The effect of aging and annealing on the magnetic properties of ultra-thin CoPt films with a Ru underlayer was investigated. For the 3 nm thick CoPt film aged in the air, the decrease of the saturation magnetic moment ms, the drastic increase of the perpendicular coercivity Hc⊥ and the perpendicular anisotropy were observed. This is because the surface layer of the CoPt film was oxidized and the bottom layer with high perpendicular anisotropy due to lattice distortion remained. For the annealed 3 nm thick CoPt film with a Pt protective layer, rising the annealing temperature Ta led to the decrease of ms, the decrease after increase of Hc⊥, and the decrease of the perpendicular squareness ratio S⊥ at Ta of 400 ∘C. The origins of effect of annealing were considered to be the grain boundary diffusion and the bulk diffusion of Ru and Pt into the CoPt film, and relaxation of the lattice distortion.

  1. Influence of boron diffusion on the perpendicular magnetic anisotropy in Ta|CoFeB|MgO ultrathin films

    SciTech Connect

    Sinha, Jaivardhan; Gruber, Maria; Kodzuka, Masaya; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro; Hayashi, Masamitsu

    2015-01-28

    We have studied structural and magnetic properties of Ta|CoFeB|MgO heterostructures using cross-section transmission electron microscopy (TEM), electron energy loss spectrum (EELS) imaging, and vibrating sample magnetometry. From the TEM studies, the CoFeB layer is found to be predominantly amorphous for as deposited films, whereas small crystallites, diameter of ∼5 nm, are observed in films annealed at 300 °C. We find that the presence of such nanocrystallites is not sufficient for the occurrence of perpendicular magnetic anisotropy. Using EELS, we find that boron diffuses into the Ta underlayer upon annealing. The Ta underlayer thickness dependence of the magnetic anisotropy indicates that ∼0.2 nm of Ta underlayer is enough to absorb the boron from the CoFeB layer and induce perpendicular magnetic anisotropy. Boron diffusion upon annealing becomes limited when the CoFeB layer thickness is larger than ∼2 nm, which coincides with the thickness at which the saturation magnetization M{sub S} and the interface magnetic anisotropy K{sub I} drop by ∼20%. These results show the direct role which boron plays in determining the perpendicular magnetic anisotropy in CoFeB|MgO heterostructures.

  2. Room-temperature perpendicular magnetic anisotropy of MgO/Fe/MgO ultrathin films

    SciTech Connect

    Kozioł-Rachwał, A.; Ślęzak, T.; Przewoźnik, J.; Skowroński, W.; Stobiecki, T.; Wilgocka-Ślęzak, D.; Qin, Q. H.; Dijken, S. van; Korecki, J.

    2013-12-14

    We used the anomalous Hall effect to study the magnetic properties of MgO/Fe(t)/MgO(001) structures in which the Fe thickness t ranged from 4 Å to 14 Å. For the iron deposited at 140 K, we obtained perpendicular magnetization at room temperature below the critical thickness of t{sub c} = (9 ± 1) Å. In the vicinity of t{sub c}, the easy magnetization axis switched from an out-of-plane orientation to an in-plane orientation, and the observed spin-reorientation transition was considered in terms of the competition among different anisotropies. The perpendicular magnetization direction was attributed to magnetoelastic anisotropy. Finally, the temperature-dependent spin-reorientation transition was analyzed for Fe thicknesses close to t{sub c}.

  3. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    PubMed

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  4. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co{sub 2}FeAl films

    SciTech Connect

    Cui, Yishen; Khodadadi, Behrouz; Schaefer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-22

    B2-ordered Co{sub 2}FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering {approx}81.2% with a low damping parameter ({alpha}) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 Degree-Sign C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co{sub 2}FeAl films annealed at 350 Degree-Sign C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing {alpha} significantly. However, the observed damping of Co{sub 2}FeAl films was still lower than that of Co{sub 60}Fe{sub 20}B{sub 20} films prepared at the same thickness and annealing temperature.

  5. In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

    NASA Astrophysics Data System (ADS)

    Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wu, Hao; Wong, Kin L.; Zhang, Zongzhi; Han, Xiufeng; Khalili Amiri, Pedram; Wang, Kang L.

    2016-05-01

    We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co40Fe40B20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

  6. The effects of tungsten concentration on crystalline structure and perpendicular magnetic anisotropy of Co-W films

    SciTech Connect

    Yin, S. Q.; Wu, Y.; Xu, X. G. Jiang, Y.; Wang, H.; Wang, J.P.

    2014-12-15

    In this study, Co-W thin films deposited by DC magnetron sputtering were demonstrated to be perpendicular magnetic anisotropic with large magnetocrystalline anisotropy energy (MAE). Thermodynamic calculations based on Miedema’s semi-empirical model have been used to estimate the phase in this binary alloy system. Based on the thermodynamic calculations results, a series of Co-W thin films were deposited on amorphous Ta underlayer with different tungsten concentrations. According to the X-ray diffraction results, the crystal structure of Co-W thin films is consistent well with that of thermodynamic calculations. Large MAE of Co-W thin films can be obtained with K{sub u} over 2.1 × 10{sup 5} J/m{sup 3} after vacuum annealing. The perpendicular coercivity (H{sub c}) of Co-W thin film reaches 9.1 × 10{sup 4} A/m. Therefore, the Co-W thin film is considered as a potential choice of high-density magnetic recording media materials.

  7. Mössbauer spectroscopy study of amorphous TbFeCo films for perpendicular magnetic data recording

    NASA Astrophysics Data System (ADS)

    Kamzin, A. S.; Morisako, A.; Liu, X.

    2008-12-01

    Amorphous films of the Tb x Fe(100 - x - y)Co y system with a thickness of ˜200 nm were deposited by RF magnetron sputtering at various pressures of argon ( P Ar) in the working chamber. It is established that the easy axis in Tb29Fe61Co10 films is oriented at an angle of 15° ± 4° relative to the normal to the film surface, whereas in Tb26Fe65Co9 films this axis is parallel to the normal. The properties of the Tb26Fe65Co9 films deposited at P Ar = 5 mTorr meet the requirements to media for the perpendicular magnetic data recording.

  8. Creep and Flow Regimes of Magnetic Domain-Wall Motion in Ultrathin Pt/Co/Pt Films with Perpendicular Anisotropy

    NASA Astrophysics Data System (ADS)

    Metaxas, P. J.; Jamet, J. P.; Mougin, A.; Cormier, M.; Ferré, J.; Baltz, V.; Rodmacq, B.; Dieny, B.; Stamps, R. L.

    2007-11-01

    We report on magnetic domain-wall velocity measurements in ultrathin Pt/Co(0.5 0.8nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfaces in weakly disordered media. The dissipation limited flow regime is found to be consistent with precessional domain-wall motion, analysis of which yields values for the damping parameter, α.

  9. FePtCu alloy thin films: Morphology, L1{sub 0} chemical ordering, and perpendicular magnetic anisotropy

    SciTech Connect

    Brombacher, C.; Schletter, H.; Daniel, M.; Matthes, P.; Joehrmann, N.; Makarov, D.; Hietschold, M.; Albrecht, M.; Maret, M.

    2012-10-01

    Rapid thermal annealing was applied to transform sputter-deposited Fe{sub 51}Pt{sub 49}/Cu bilayers into L1{sub 0} chemically ordered ternary (Fe{sub 51}Pt{sub 49}){sub 100-x}Cu{sub x} alloys with (001) texture on amorphous SiO{sub 2}/Si substrates. It was found that for thin film samples, which were processed at 600 Degree-Sign C for 30 s, the addition of Cu strongly favors the L1{sub 0} ordering and (001) texture formation. Furthermore, it could be revealed by transmission electron microscopy and electron backscatter diffraction that the observed reduction of the ordering temperature with Cu content is accompanied by an increased amount of nucleation sites forming L1{sub 0} ordered grains. The change of the structural properties with Cu content and annealing temperature is closely related to the magnetic properties. While an annealing temperature of 800 Degree-Sign C induces strong perpendicular magnetic anisotropy (PMA) in binary Fe{sub 51}Pt{sub 49} films, the addition of Cu systematically reduces the PMA. However, due to the enhancement of both the A1-L1{sub 0} phase transformation and the development of the (001) texture with increasing Cu content, lowering of the annealing temperature leads to a shift of the maximum perpendicular magnetic anisotropy towards alloys with higher Cu content. Thus, for an annealing temperature of 600 Degree-Sign C, the highest perpendicular magnetic anisotropy energy is found for the (Fe{sub 51}Pt{sub 49}){sub 91}Cu{sub 9} alloy. The smooth surface morphology, adjustable PMA, and high degree of intergranular exchange coupling make these films suitable for post-processing required for specific applications such as for sensorics or magnetic data storage.

  10. Large anisotropic Fe orbital moments in perpendicularly magnetized Co2FeAl Heusler alloy thin films revealed by angular-dependent x-ray magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Okabayashi, Jun; Sukegawa, Hiroaki; Wen, Zhenchao; Inomata, Koichiro; Mitani, Seiji

    2013-09-01

    Perpendicular magnetic anisotropy (PMA) in Heusler alloy Co2FeAl thin films sharing an interface with a MgO layer is investigated by angular-dependent x-ray magnetic circular dichroism. Orbital and spin magnetic moments are deduced separately for Fe and Co 3d electrons. In addition, the PMA energies are estimated using the orbital magnetic moments parallel and perpendicular to the film surfaces. We found that PMA in Co2FeAl is determined mainly by the contribution of Fe atoms with large orbital magnetic moments, which are enhanced at the interface between Co2FeAl and MgO. Furthermore, element specific magnetization curves of Fe and Co are found to be similar, suggesting the existence of ferromagnetic coupling between Fe and Co PMA directions.

  11. Laser heating and oxygen partial pressure effects on the dynamic magnetic properties of perpendicular CoFeAlO films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Li, Wei; Tang, Minghong; Zhang, Zongzhi; Lou, Shitao; Jin, Q. Y.

    2016-07-01

    The impact of oxidation and laser heating on the dynamic magnetic properties of perpendicularly magnetized Co50Fe25Al25O films has been studied by time-resolved magneto-optical Kerr effect in a fs-laser pump-probe setup. We find that pump laser fluence Fp can affect the effective magnetic anisotropy field and thus the precession frequency f seriously, leading to an increased dependence of effective magnetic damping factor αeff on the external field at higher fluences. Moreover, the αeff increases with increasing the oxygen partial pressure PO2 while the uniaxial anisotropy energy Ku and Landau factor g decrease, owing to the increased proportion of superparamagnetic CoFe oxides formed by over-oxidation. By optimizing both the Fp and PO2, the intrinsic damping factor is determined to be lower than 0.028 for the perpendicular film showing a uniaxial anisotropy energy as high as 4.3×106 erg/cm3. The results in this study provide a promising approach to manipulate the magnetic parameters for possible applications in spintronic devices.

  12. Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]{sub N} thin films

    SciTech Connect

    Kim, T. W.; Choi, Y. H.; Lee, K. J.; Jung, M. H.; Yoon, J. B.; Cho, J. H.; You, C.-Y.

    2015-05-07

    Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]{sub N} multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]{sub N} demonstrate possible potential as a free layer for PMA-based memory devices.

  13. Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]N thin films

    NASA Astrophysics Data System (ADS)

    Kim, T. W.; Choi, Y. H.; Lee, K. J.; Yoon, J. B.; Cho, J. H.; You, C.-Y.; Jung, M. H.

    2015-05-01

    Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]N multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]N demonstrate possible potential as a free layer for PMA-based memory devices.

  14. Unusual dc electric fields induced by a high frequency alternating current in superconducting Nb films under a perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Aliev, F. G.; Levanyuk, A. P.; Villar, R.; Sierra, J. F.; Pryadun, V. V.; Awad, A.; Moshchalkov, V. V.

    2009-06-01

    We report a systematic study of dc electric fields produced by sinusoidal high frequency ac currents in Nb superconducting films subject to a constant magnetic field perpendicular to the film plane. At frequencies in the 100 kHz to MHz range appears a new rectification effect which has not been previously observed at lower frequencies. We have observed the dc electric field generated in this regime in films without intentionally created anisotropic pinning centres, i.e. plain films, both in strip geometry as in cross-shape geometry, and also in films with symmetric periodic pinning centres. The electric field appears in both directions along and transverse to the alternating current and is essentially different at opposite film sides. It depends strongly on the intensity of the magnetic field and may exceed by nearly an order of magnitude the rectified electric fields recently reported at lower frequencies (few kHz) in systems with artificially induced anisotropic vortex pinning. The effect has a non-monotonic dependence on the drive current frequency, being maximum around a few 100 kHz to MHz, and shows a complicated temperature dependence. It is found to be different in long strips and cross shape samples. In the case of films with symmetric periodic pinning centres the rectified voltage shows a lower magnitude than in plain films, and shows an interesting structure when the applied magnetic field crosses the matching fields. We are only able to put forward tentative ideas to explain this phenomenon, which irrespective of its explanation should be taken into account in experimental studies of rectification effects in superconductors.

  15. Spin-orbit interaction tuning of perpendicular magnetic anisotropy in L1{sub 0} FePdPt films

    SciTech Connect

    Ma, X.; Lüpke, G. E-mail: hbzhao@fudan.edu.cn; He, P.; Ma, L.; Zhou, S. M.; Guo, G. Y. E-mail: hbzhao@fudan.edu.cn; Zhao, H. B. E-mail: hbzhao@fudan.edu.cn

    2014-05-12

    The dependence of perpendicular magnetic anisotropy K{sub u} on spin-orbit coupling strength ξ is investigated in L1{sub 0} ordered FePd{sub 1−x}Pt{sub x} films by time-resolved magneto-optical Kerr effect measurements and ab initio density functional calculations. Continuous tuning of K{sub u} over a wide range of magnitude is realized by changing the Pt/Pd concentration ratio, which strongly modifies ξ but keeps other leading parameters affecting K{sub u} nearly unchanged. Ab initio calculations predict a nearly quadratic dependence of K{sub u} on ξ, consistent with experimental data. K{sub u} increases with increasing chemical order and decreasing thermal spin fluctuations, which becomes more significant for samples with higher Pt concentration. The results demonstrate an effective method to tune K{sub u} utilizing its sensitivity on ξ, which will help fabricate magnetic systems with desirable magnetic anisotropy.

  16. AC current rectification in Nb films with or without symmetrical Nb/Ni periodic pinning arrays in perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Pryadun, Vladimir

    2005-03-01

    Rectification of AC current has been observed in plain superconducting Nb films and in Nb/Ni films with symmetric periodic pinning centers. The rectified DC voltage appears for various sample geometries (cross or strip) both along and transverse to the alternating current direction, is nearly anti-symmetric with perpendicular magnetic field and strongly dependent on temperature below Tc. Analyses of the data at different temperatures, drive frequencies from 100kHz to 150MHz and at the different sample sides [1] shows that not far below Tc the rectification phenomena can be understood in terms of generation of electric fields due to local excess of critical current. Further below Tc anisotropic pinning effects could also contribute to the rectification. [1] F.G.Aliev, et al., Cond. Mat.405656. Supported by Comunidad Autonoma de Madrid -CAM/07N/0050/2002

  17. Magnetization reversal of giant perpendicular magnetic anisotropy at the magnetic-phase transition in FeRh films on MgO

    NASA Astrophysics Data System (ADS)

    Odkhuu, Dorj

    2016-02-01

    Based on first-principles calculations, we demonstrate that substitutions of transition metals Ru and Ir, neighboring and same group elements in the periodic table, for the Rh site in the vicinity of surface can induce a substantially large perpendicular magnetic anisotropy (PMA), up to an order of magnitude of 20 erg /cm2 , in FeRh films on MgO. The main driving mechanism for this huge PMA is the interplay between the dx y and dx2-y2 orbital states of the substitutional 4 d and 5 d transition metal atoms with large spin-orbit coupling. Further investigations demonstrate that magnetization direction of PMA undergoes a transition into an in-plane magnetization at the antiferromagnet → ferromagnet phase transition, which provides a viable route for achieving large and switchable PMA associated with the magnetic-phase transition in antiferromagnet spintronics.

  18. Polarized neutron reflectivity study of perpendicular magnetic anisotropy in MgO/CoFeB/W thin films

    NASA Astrophysics Data System (ADS)

    Ambaye, Haile; Zhan, Xiao; Li, Shufa; Lauter, Valeria; Zhu, Tao

    In this work we study the origin of PMA in MgO/CoFeB/W trilayer systems using polarized neutron reflectivity. Recently, the spin Hall effect in the heavy metals, such as Pt and Ta, has been of significant interest for highly efficient magnetization switching of the ultrathin ferromagnets sandwiched by such a heavy metal and an oxide, which can be used for spintronic based memory and logic devices. Most work has focused on heavy-metal/ferromagnet/oxide trilayer (HM/FM/MO) structures with perpendicular magnetic anisotropy (PMA), where the oxide layer plays the role of breaking inversion symmetry .No PMA was found in W/CoFeB/MgO films. An insertion of Hf layer in between the W and CoFeB layers, however, has been found to create a strong PMA. Roughness and formation of interface alloys by interdiffusion influences the extent of PMA. We intend to identify these influences using the depth sensitive technique of PNR. In our previous study, we have successfully performed polarized neutron reflectometry (PNR) measurements on the Ta/CoFeB/MgO/CoFeB/Ta thin film with MgO thickness of 1 nm. The PNR measurements were carried out using the BL-4A Magnetic Reflectometer at SNS. This work has been supported by National Basic Research Program of China (2012CB933102). Research at SNS was supported by the Office of BES, DOE.

  19. Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a top electrode consisting of a perpendicularly magnetized D022-Mn3Ge film

    NASA Astrophysics Data System (ADS)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-07-01

    We grew a magnetic tunnel junction (MTJ) with a top electrode consisting of a Mn3Ge film using a thin Co-Fe alloy film as a seed layer. X-ray diffraction showed that the Mn3Ge had (001)-oriented D022 structure epitaxially grown on an MgO(001) substrate. Magnetic hysteresis loops suggested that the D022-Mn3Ge film possessed perpendicular magnetic anisotropy. A magnetoresistance (MR) ratio of 11.3% was observed in the microfabricated MTJ at room temperature. The resistance-field curve suggested that the top-Co-Fe and D022-Mn3Ge layer are weakly coupled antiferromagnetically. The optimization of top-Co-Fe composition would improve MR ratio.

  20. Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film

    NASA Astrophysics Data System (ADS)

    Shirsath, Sagar E.; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

    2016-07-01

    Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate.

  1. Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film

    PubMed Central

    Shirsath, Sagar E.; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

    2016-01-01

    Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate. PMID:27435010

  2. Enhancement of perpendicular magnetic anisotropy and coercivity in ultrathin Ru/Co/Ru films through the buffer layer engineering

    NASA Astrophysics Data System (ADS)

    Kolesnikov, Alexander G.; Stebliy, Maxim E.; Ognev, Alexey V.; Samardak, Alexander S.; Fedorets, Aleksandr N.; Plotnikov, Vladimir S.; Han, Xiufeng; Chebotkevich, Ludmila A.

    2016-10-01

    We present results on a study of the interplay between microstructure and the magnetic properties of ultrathin Ru/Co/Ru films with perpendicular magnetic anisotropy (PMA). To induce PMA in the Co layer, we experimentally determined thicknesses of the buffer and capping layers of Ru. The maximum value of PMA was observed for the Co thickness of 0.9 nm with the 3 nm thick capping layer. The effective anisotropy field (H eff) and coercive force (H c) of the Co layer are very sensitive to the Ru buffer layer thickness (t b). The values of H eff and H c increase approximately by two and ten times, correspondingly, when t b changes from 6 to 20 nm, owing to an increase in volume fraction of the crystalline phase as a result of the grains’ growth. PMA is found to be mainly enhanced by elastic strains induced by the lattice mismatch on the Ru/Co and Co/Ru interfaces, leading to the deformation of the Co lattice. The surface impact is determined to be less than 10% of the magneto-elastic contribution to the effective anisotropy. Observation of the magnetic domain structure by means of polar Kerr microscopy reveals that out-of-plane magnetization reversal occurs through the nucleation, growth, and annihilation of domains, where the average size drastically rises with the increasing t b.

  3. Interfacial contributions to perpendicular magnetic anisotropy in Pd/Co2MnSi/MgO trilayer films

    NASA Astrophysics Data System (ADS)

    Fu, Huarui; You, Caiyin; Li, Yunlong; Wang, Ke; Tian, Na

    2016-05-01

    Heusler alloy Co2MnSi is widely selected as the ferromagnetic layer to achieve a giant tunneling magnetic resistance (TMR). It is also one of the most promising materials for potential spintronic applications of magnetic random access memory (MRAM) due to the high spin polarization, in which the configuration of perpendicular magnetic anisotropy (PMA) possesses great advantages over the in-plane ones. Therefore, it is highly desirable to investigate the PMA effects of the Co2MnSi layer with a suitable stack structure. In this work, a strong PMA (1.61  ×  106 erg cm-3) is demonstrated in the system of Pd/Co2MnSi/MgO trilayer films. The contributions of the interfaces beside the ferromagnetic Co2MnSi layer were quantitatively clarified. The interfacial anisotropy K s,MgO of 0.79 erg cm-2 at the Co2MnSi/MgO interface is larger than the K s,Pd value of 0.26 erg cm-2 at the Pd/Co2MnSi interface. Due to the dual interfacial effects, the strong PMA can be sustained at the high annealing temperature with a thick Co2MnSi layer of about 4.9 nm, which is favorable to the potential spintronic application. The Mn-O bonding was also found to be enriched at the Co2MnSi/MgO interface for the annealed Pd/Co2MnSi (3.4 nm)/MgO film with the large PMA, showing an experimental evidence for the theoretical results of the Mn-O bonding contribution to PMA.

  4. Nanopatterned CoPt alloys with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Makarov, D.; Bermúdez-Ureña, E.; Schmidt, O. G.; Liscio, F.; Maret, M.; Brombacher, C.; Schulze, S.; Hietschold, M.; Albrecht, M.

    2008-10-01

    CoPt alloy films with perpendicular magnetic anisotropy were grown on SiO2 nanoparticle arrays with particle sizes as small as 10 nm. In order to induce perpendicular magnetic anisotropy in the CoPt film, a MgO seed layer was sputter deposited. Despite the fact that neighboring CoPt film caps are interconnected, individual caps appear as single domain and for most of them their magnetization orientation can be reversed individually. This behavior might be caused by domain wall nucleation and pinning preferentially at the rim of each cap. Thus, arrays of magnetic caps with defined pinning sites can be considered as a percolated perpendicular medium.

  5. Oscillations of critical superconducting current in thin doubly-connected Sn films in an external perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Sivakov, A. G.; Pokhila, A. S.; Glukhov, A. M.; Kuplevakhsky, S. V.; Omelyanchouk, A. N.

    2014-05-01

    We report the results of experimental and theoretical studies of critical current oscillations in thin doubly-connected Sn films in an external perpendicular magnetic field. The experiments were performed on samples that consisted of two wide electrodes joined together by two narrow channels. The length of the channels l satisfied the condition l ≫ ξ (ξ is the Ginzburg-Landau coherence length). At temperatures close to the critical temperature Tc, the dependence of the critical current Ic on average external magnetic flux Φ¯e has the form of a piecewise linear function, periodic with respect to the flux quantum Φ0. The amplitude of the Ic oscillation at a given temperature is proportional to the factor ξ/l. Moreover, the dependence Ic=Ic(Φ ¯e) is found to be multivalued, hence indicating the presence of metastable states. Based on the Ginzburg-Landau approximation, a theory was constructed that explains the above features of the oscillation phenomenon taking a perfectly symmetric system as an example. Further, the experiments displayed the effects related to the critical currents imbalance between the superconducting channels, i.e., shift of the maxima of the dependence Ic=Ic(Φ ¯e) accompanied by an asymmetry with respect to the transport current direction.

  6. Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interfaces

    NASA Astrophysics Data System (ADS)

    Takamura, Yota; Suzuki, Takahiro; Fujino, Yorinobu; Nakagawa, Shigeki

    2014-05-01

    A 100-nm-thick L21-ordered full-Heusler Co2FeSi (CFS) alloy film was fabricated using the facing targets sputtering (FTS) method at a substrate temperature TS of 300 °C. The degrees of L21- and B2-order for the film were 37% and 96%, respectively. In addition, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by the magnetic anisotropy of MgO-interfaces were also successfully fabricated using the FTS method. The CFS/MgO stacked layers exhibited PMA when the CFS layer had a thickness of 0.6 nm ≤ dCFS ≤ 1.0 nm. The PMA in these structures resulted from the CFS/MgO interfacial perpendicular magnetic anisotropy.

  7. Effect of process temperature on structure and magnetic properties of perpendicularly magnetized D022-Mn3Ge thin films on a Cr buffer layer

    NASA Astrophysics Data System (ADS)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-08-01

    We investigated the effect of post-annealing on the perpendicular magnetic anisotropy constant (Ku) and surface roughness (Ra) of Mn3Ge thin films grown at comparatively low temperatures (room temperature, 150, 200, and 250 °C) on Cr buffer layers. The films grown at ≥200 °C exhibit a D022-ordered crystal structure in an as-deposited state. The post-annealing process demonstrates differences in trends between the 200-°C-grown film and the 250-°C-grown film. The 200-°C-grown film displays significant degradation of Ku and an increase in Ra upon annealing at >300 °C because of its poor thermal durability, while the 250-°C-grown film is still intact even at 500 °C. The 250-°C-grown film post-annealed at 300 °C displays relatively high Ku while Ra remains low. It may be possible to grow D022-Mn3Ge with higher Ku and low Ra using a buffer-layer material with a lattice-matched crystal structure with D022-Mn3Ge and higher thermal durability than Cr.

  8. Perpendicular magnetic anisotropy of Mn{sub 4}N films on MgO(001) and SrTiO{sub 3}(001) substrates

    SciTech Connect

    Yasutomi, Yoko; Ito, Keita; Sanai, Tatsunori; Toko, Kaoru; Suemasu, Takashi

    2014-05-07

    We grew Mn{sub 4}N epitaxial thin films capped with Au layers on MgO(001) and SrTiO{sub 3}(001) substrates by molecular beam epitaxy. Perpendicular magnetic anisotropy (PMA) was confirmed in all the samples at room temperature from the magnetization versus magnetic field curves using superconducting quantum interference device magnetometer. From the ω-2θ x-ray diffraction (XRD) and ϕ-2θ{sub χ} XRD patterns, the ratios of perpendicular lattice constant c to in-plane lattice constant a, c/a, were found to be about 0.99 for all the samples. These results imply that PMA is attributed to the in-plane tensile strain in the Mn{sub 4}N films.

  9. Strain relaxation and enhanced perpendicular magnetic anisotropy in BiFeO{sub 3}:CoFe{sub 2}O{sub 4} vertically aligned nanocomposite thin films

    SciTech Connect

    Zhang, Wenrui; Jiao, Liang; Li, Leigang; Jian, Jie; Khatkhatay, Fauzia; Chu, Frank; Chen, Aiping; Jia, Quanxi; MacManus-Driscoll, Judith L.; Wang, Haiyan

    2014-02-10

    Self-assembled BiFeO{sub 3}:CoFe{sub 2}O{sub 4} (BFO:CFO) vertically aligned nanocomposite thin films have been fabricated on SrTiO{sub 3} (001) substrates using pulsed laser deposition. The strain relaxation mechanism between BFO and CFO with a large lattice mismatch has been studied by X-ray diffraction and transmission electron microscopy. The as-prepared nanocomposite films exhibit enhanced perpendicular magnetic anisotropy as the BFO composition increases. Different anisotropy sources have been investigated, suggesting that spin-flop coupling between antiferromagnetic BFO and ferrimagnetic CFO plays a dominant role in enhancing the uniaxial magnetic anisotropy.

  10. Perpendicular Magnetic Anisotropy Induced by Tetragonal Distortion of FeCo Alloy Films Grown on Pd(001)

    NASA Astrophysics Data System (ADS)

    Winkelmann, Aimo; Przybylski, Marek; Luo, Feng; Shi, Yisheng; Barthel, Jochen

    2006-06-01

    We grew tetragonally distorted FexCo1-x alloy films on Pd(001). Theoretical first-principles calculations for such films predicted a high saturation magnetization and a high uniaxial magnetic anisotropy energy for specific values of the lattice distortion c/a and the alloy composition x. The magnetic anisotropy was investigated using the magneto-optical Kerr effect. An out-of-plane easy axis of magnetization was observed for Fe0.5Co0.5 films in the thickness range of 4 to 14 monolayers. The magnetic anisotropy energy induced by the tetragonal distortion is estimated to be almost 2 orders of magnitude larger than the value for bulk FeCo alloys. Using LEED Kikuchi patterns, a change of the easy axis of magnetization can be related to a decrease of the tetragonal distortion with thickness.

  11. Enhancement of order degree and perpendicular magnetic anisotropy of L10 ordered Fe(Pt,Pd) alloy film by introducing a thin MgO cap-layer

    NASA Astrophysics Data System (ADS)

    Noguchi, Youhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

    2016-07-01

    Fe50PtxPd50-x (at%, x=0-50) alloy films of 10 nm thickness with and without 2-nm-thick MgO cap-layers are prepared on MgO(001) single-crystal substrates by employing a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The influences of MgO cap-layer on the structure and the magnetic properties are investigated. Fe50PtxPd50-x films epitaxially grow on the substrates at 200 °C. The Fe50Pd50 and the Fe50Pt12.5Pd37.5 films are respectively composed of (001) single-crystals with disordered fcc-based (A1) and bcc-based (A2) structures. The films with x>25 consist of mixtures of A1 and A2 crystals. The volume ratio of A2 to A1 crystal decreases with increasing the x value from 25 to 50. The in-plane and out-of-plane lattices are respectively expanded and shrunk due to accommodation of lattice mismatch between film and substrate. When the films are annealed at 600 °C, phase transformation to L10 ordered phase takes place. L10 phase transformation of Fe50PtxPd50-x film is promoted for a sample with MgO cap-layer and the order degree is higher than that without cap-layer. Furthermore, L10 ordering with the c-axis perpendicular to the substrate surface is enhanced for the film with cap-layer. The cap-layer is considered to be giving a tension stress to the magnetic film in lateral direction which promotes L10 ordering with the c-axis perpendicular to the substrate. Deposition of cap-layer is shown effective in achieving higher order degree and in enhancing perpendicular magnetic anisotropy with Fe(Pt,Pd) films.

  12. Periodic magnetic domain wall pinning in an ultrathin film with perpendicular anisotropy generated by the stray magnetic field of a ferromagnetic nanodot array

    NASA Astrophysics Data System (ADS)

    Metaxas, P. J.; Zermatten, P.-J.; Jamet, J.-P.; Ferré, J.; Gaudin, G.; Rodmacq, B.; Schuhl, A.; Stamps, R. L.

    2009-03-01

    The stray magnetic field of an array of hard ferromagnetic perpendicularly magnetized [Co/Pt]4 nanodots is used to nondestructively generate a periodic pinning potential for domain walls in an underlying [Pt/Co]2/Pt layer with perpendicular anisotropy. Pinning is evidenced using magneto-optical microscopy. The magnetic field (H) dependence of the average wall velocity in the presence of the periodic pinning potential is consistent with thermally activated creep, modified only by the addition of a uniform retarding field Hret, whose magnitude depends on the relative alignment of H and the dots' magnetizations.

  13. Underlayer Effect on Perpendicular Magnetic Anisotropy in Co20Fe60B20\\MgO Films

    PubMed Central

    Chen, P.J.; Iunin, Y.L.; Cheng, S.F.; Shull, R.D.

    2016-01-01

    Perpendicular Magnetic Tunneling Junctions (pMTJs) with Ta\\CoFeB\\MgO have been extensively studied in recent years. However, the effects of the underlayer on the formation of the CoFeB perpendicular magnetic anisotropy (PMA) are still not well understood. Here we report the results of our systematic use of a wide range of elements (Ti, V, Cr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt and Au) encompassed by columns IVA, VA, VIA, VIIA and VIIIA of the periodic table as the underlayer in a underlayer\\Co20Fe60B20\\MgO stack. Our goals were to survey more elements which could conceivably create a PMA in CoFeB and thereby to explore the mechanisms enabling these underlayers to enhance or create the PMA. We found underlayer elements having both an outer shell of 4d electrons (Zr, Nb Mo, and Pd) and 5d electrons (Hf, Ta, W, Re, Ir, and Pt) resulted in the development of a PMA in the MgO-capped Co20Fe60B20. Hybridization between the 3d electrons of the Fe or Co (in the Co20Fe60B20) at the interface with the 4d or 5d electrons of the underlayer is thought to be the cause of the PMA development. PMID:27499549

  14. Perpendicular reading of single confined magnetic skyrmions

    PubMed Central

    Crum, Dax M.; Bouhassoune, Mohammed; Bouaziz, Juba; Schweflinghaus, Benedikt; Blügel, Stefan; Lounis, Samir

    2015-01-01

    Thin-film sub-5 nm magnetic skyrmions constitute an ultimate scaling alternative for future digital data storage. Skyrmions are robust noncollinear spin textures that can be moved and manipulated by small electrical currents. Here we show here a technique to detect isolated nanoskyrmions with a current perpendicular-to-plane geometry, which has immediate implications for device concepts. We explore the physics behind such a mechanism by studying the atomistic electronic structure of the magnetic quasiparticles. We investigate from first principles how the isolated skyrmion local-density-of-states which tunnels into the vacuum, when compared with the ferromagnetic background, is modified by the site-dependent spin mixing of electronic states with different relative canting angles. Local transport properties are sensitive to this effect, as we report an atomistic conductance anisotropy of up to ∼20% for magnetic skyrmions in Pd/Fe/Ir(111) thin films. In single skyrmions, engineering this spin-mixing magnetoresistance could possibly be incorporated in future magnetic storage technologies. PMID:26471957

  15. Microstructure and magnetic properties of FePt-TiC-C granular thin films for perpendicular recording

    NASA Astrophysics Data System (ADS)

    Cui, W. B.; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Shiroyama, T.; Hono, K.

    2014-03-01

    By using TiC as the segregate, FePt-TiC and FePt-TiC-C thin films were prepared by co-sputtering onto strongly (002)-textured MgO/NiTa underlayer on thermally-oxidized Si substrates. The TiC effects on the microstructure and magnetic properties of L10 ordered FePt and FePt-C thin films were studied. The TiC segregate can refine the grain size of L10 ordered FePt. Coercivities and the degree of L10 ordering were degraded with increasing TiC concentration. By properly tuning the composition of TiC and C, the granular microstructure with average grain size of 10.3 nm and standard deviation of 1.86 nm can be achieved with the coercivity of 1.4 T. The balance between microstructure and magnetic properties indicates that mixture addition as the segregates is promising.

  16. Perpendicular magnetic anisotropy at the interface between ultrathin Fe film and MgO studied by angular-dependent x-ray magnetic circular dichroism

    SciTech Connect

    Okabayashi, J.; Koo, J. W.; Mitani, S.; Sukegawa, H.; Takagi, Y.; Yokoyama, T.

    2014-09-22

    Interface perpendicular magnetic anisotropy (PMA) in ultrathin Fe/MgO (001) has been investigated using angular-dependent x-ray magnetic circular dichroism (XMCD). We found that anisotropic orbital magnetic moments deduced from the analysis of XMCD contribute to the large PMA energies, whose values depend on the annealing temperature. The large PMA energies determined from magnetization measurements are related to those estimated from the XMCD and the anisotropic orbital magnetic moments through the spin-orbit interaction. The enhancement of anisotropic orbital magnetic moments can be explained mainly by the hybridization between the Fe 3d{sub z}{sup 2} and O 2p{sub z} states.

  17. Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

    SciTech Connect

    Herrera Diez, L. García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D.; Lamperti, A.; Mantovan, R.; Ocker, B.

    2015-07-20

    This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

  18. Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

    SciTech Connect

    An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Xie, Qian; Zhang, Zhengjun; Wang, Jian

    2015-03-15

    To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glass substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.

  19. Large negative thermal expansion of the Co subnetwork measured by EXAFS in highly disordered Nd₁-xCox thin films with perpendicular magnetic anisotropy.

    PubMed

    Díaz, J; Cid, R; Hierro, A; M Álvarez-Prado, L; Quirós, C; Alameda, J M

    2013-10-23

    We have measured a negative thermal expansion (NTE) of the Co subnetwork in amorphous Nd1-xCox (0.78 < x < 0.84) thin films of the order of 1% in volume using linearly polarized EXAFS spectroscopy at RT and 10 K. The expansion, which is anisotropic, is uncorrelated with the perpendicular magnetic anisotropy (PMA) observed in all the films, but correlated with the method used to deposit them. The atomic environments of the Nd atoms resulted in such a strong disorder that Nd-Nd and Nd-Co environments were invisible to EXAFS, and only Co-Co atomic environments were detected. The information on the Nd subnetwork was obtained through its magnetic moment measured by XMCD. These measurements demonstrate an increasing interaction of neodymium atoms with their particular local crystal field as the temperature decreased, suggesting possible structural modifications at their sites. Since the magnetic moment of the cobalt subnetwork remains essentially constant with the temperature, it is proposed that its detected NTE may be caused by the mechanical response of the amorphous network to structural transformations at the Nd sites. These results support that the PMA in RE-TM alloys is localized at the RE sites. The complete absence of EXAFS oscillations in the Nd L3 EXAFS spectra is remarkable: it means that the coherence length of the photoemitted electrons in disordered matter can be strongly reduced from that expected by atomic calculations to the point of being less than first neighbor distances, which is contrary to the common belief that first neighbors are always visible by EXAFS.

  20. Spin wave spectra in perpendicularly magnetized permalloy rings

    SciTech Connect

    Zhou, X.; Ding, J.; Adeyeye, A. O.; Kostylev, M.

    2015-03-16

    The dynamic behavior of perpendicularly magnetized permalloy circular rings is systematically investigated as a function of film thickness using broadband field modulated ferromagnetic resonance spectroscopy. We observed the splitting of one spin wave mode into a family of dense resonance peaks for the rings, which is markedly different from the single mode observed for continuous films of the same thickness. As the excitation frequency is increased, the mode family observed for the rings gradually converges into one mode. With the increase in the film thickness, a sparser spectrum of modes is observed. Our experimental results are in qualitative agreement with the dynamic micromagnetic simulations.

  1. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Gopman, D. B.; Dennis, C. L.; Chen, P. J.; Iunin, Y. L.; Finkel, P.; Staruch, M.; Shull, R. D.

    2016-06-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

  2. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy.

    PubMed

    Gopman, D B; Dennis, C L; Chen, P J; Iunin, Y L; Finkel, P; Staruch, M; Shull, R D

    2016-01-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices. PMID:27297638

  3. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

    PubMed Central

    Gopman, D. B.; Dennis, C. L.; Chen, P. J.; Iunin, Y. L.; Finkel, P.; Staruch, M.; Shull, R. D.

    2016-01-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices. PMID:27297638

  4. Counterstreaming magnetized plasmas. II. Perpendicular wave propagation

    SciTech Connect

    Tautz, R.C.; Schlickeiser, R.

    2006-06-15

    The properties of longitudinal and transverse oscillations in magnetized symmetric counterstreaming Maxwellian plasmas with equal thermal velocities for waves propagating perpendicular to the stream direction are investigated on the basis of Maxwell equations and the nonrelativistic Vlasov equation. With the constraint of vanishing particle flux in the stream direction, three distinct dispersion relations are known, which are the ordinary-wave mode, the Bernstein wave mode, and the extraordinary electromagnetic wave mode, where the latter two are only approximations. In this article, all three dispersion relations are evaluated for a counterstreaming Maxwellian distribution function in terms of the hypergeometric function {sub 2}F{sub 2}. The growth rates for the ordinary-wave mode are compared to earlier results by Bornatici and Lee [Phys. Fluids 13, 3007 (1970)], who derived approximate results, whereas in this article the exact dispersion relation is solved numerically. The original results are therefore improved and show differences of up to 21% to the results obtained in this article.

  5. The study of the perpendicular anisotropy in the nanocrystalline Ni and Co films

    NASA Astrophysics Data System (ADS)

    Kakazei, G. N.; Lesnik, N. A.

    1996-03-01

    The different mechanisms leading to the formation of perpendicular magnetic anisotropy (PA) in nanocrystalline Ni and Co films have been estimated. The magnetoelastic mechanism due to the difference between film and surface thermal coefficients, the effective demagnetizing factor modification connected with the columnar structure, and the microplastic deformation of grain boundaries during film deposition stimulating the stress-induced PA, have been considered. Their reality has been confirmed experimentally using X-band FMR.

  6. Perpendicular reading of single confined magnetic skyrmions

    NASA Astrophysics Data System (ADS)

    Crum, Dax M.; Bouhassoune, Mohammed; Bouaziz, Juba; Schweflinghaus, Benedikt; Blügel, Stefan; Lounis, Samir

    We present the first fully self-consistent first-principles investigation of single chiral magnetic skyrmions as entire entities based on density functional theory. The work is tied to skyrmions with sub-5nm diameters embedded within thin ferromagnetic films stabilized through interfacial Dzyaloshinskii-Moriya interactions. We found that the non-collinearity of the magnetic texture inside the skyrmions leads to spin-mixing of the electronic structure, which can be probed as site-dependent tunneling spin-mixing magnetoresistance (TXMR). The conduction inhomogeneity can reach values up to 20% in Pd/Fe/Ir(111) samples. The non-collinear component of the TXMR has been experimentally verified, validating our theoretical calculations and showing the capability of the TXMR to resolve complex nanoscale spin-textures. The work is carried out with the newly developed Jülich relativistic Korringa-Kohn Rostoker Green function method. D.M.C. is supported by an NSF fellowship. Funding provided by the HGF-YIG Program VH-NG-717.

  7. Tetragonal D022 Mn3+xGe Epitaxial Films Grown on MgO(100) with a Large Perpendicular Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Mizukami, Shigemi; Sakuma, Akimasa; Sugihara, Atsushi; Kubota, Takahide; Kondo, Yukio; Tsuchiura, Hiroki; Miyazaki, Terunobu

    2013-12-01

    First-principles calculation of D022 Mn3Ge shows a fully spin-polarized Δ1 band at the Fermi level, low saturation magnetization MS=180 emu/cm3, high uniaxial magnetic anisotropy Ku=23 Merg/cm3, and low Gilbert damping α=9×10-4. We also experimentally investigate D022 Mn3+xGe epitaxial films grown on MgO(100) substrates with different compositions x. The films exhibit a coercivity of about 20 kOe, MS of about 130 emu/cm3, and Ku of about 10 Merg/cm3 at x=0.55 (78 at.% Mn). These indicate that D022 Mn3Ge is a good candidate for spin-transfer-torque random access memory.

  8. X-ray study of aligned magnetic stripe domains in perpendicular multilayers

    SciTech Connect

    Hellwig, O.; Denbeaux, G.P.; Kortright, J.B.; Fullerton, Eric E.

    2003-03-03

    We have investigated the stripe domain structure and the magnetic reversal of perpendicular Co/Pt based multilayers at room temperature using magnetometry, magnetic imaging and magnetic x-ray scattering. In-plane field cycling aligns the stripe domains along the field direction. In magnetic x-ray scattering the parallel stripe domains act as a magnetic grating resulting in observed Bragg reflections up to 5th order. We model the scattering profile to extract and quantify the domain as well as domain wall widths. Applying fields up to {approx}1.2 kOe perpendicular to the film reversibly changes the relative width of up versus down domains while maintaining the overall stripe periodicity. Fields above 1.2 kOe introduce irreversible changes into the domain structure by contracting and finally annihilating individual stripe domains. We compare the current results with modeling and previous measurements of films with perpendicular anisotropy.

  9. Highly tunable perpendicularly magnetized synthetic antiferromagnets for biotechnology applications

    NASA Astrophysics Data System (ADS)

    Vemulkar, T.; Mansell, R.; Petit, D. C. M. C.; Cowburn, R. P.; Lesniak, M. S.

    2015-07-01

    Magnetic micro and nanoparticles are increasingly used in biotechnological applications due to the ability to control their behavior through an externally applied field. We demonstrate the fabrication of particles made from ultrathin perpendicularly magnetized CoFeB/Pt layers with antiferromagnetic interlayer coupling. The particles are characterized by zero moment at remanence, low susceptibility at low fields, and a large saturated moment created by the stacking of the basic coupled bilayer motif. We demonstrate the transfer of magnetic properties from thin films to lithographically defined 2 μm particles which have been lifted off into solution. We simulate the minimum energy state of a synthetic antiferromagnetic bilayer system that is free to rotate in an applied field and show that the low field susceptibility of the system is equal to the magnetic hard axis followed by a sharp switch to full magnetization as the field is increased. This agrees with the experimental results and explains the behaviour of the particles in solution.

  10. Perpendicular magnetic recording—Its development and realization—

    PubMed Central

    IWASAKI, Shun-ichi

    2009-01-01

    The principle of conventional magnetic recording is that magnetic fields are applied parallel to the plane of the magnetic medium. As described in this paper, the invention and development of a new method of placing the magnetized information perpendicular to the plane of the magnetic recording medium is presented. The yield in the mass production of high-density hard disk drives (HDDs) for perpendicular recording is much higher than that of HDDs for conventional recording. Consequently, it is estimated that as many as 75% of the 500 million HDDs to be shipped this year will use this technology. PMID:19212097

  11. The aftereffect in ultrathin ferromagnetic films with easy perpendicular direction

    NASA Astrophysics Data System (ADS)

    Schmidt, W.

    1992-08-01

    We consider a model of the aftereffect where the walls are detached from pin defects by vibrations. Dependence is obtained between the activation energy on the external field which is used to estimate the distance between defects, the radius of pin cavity and the stability time in a real film. The calculation is restricted to limp domain walls and ultrathin films with easy perpendicular direction. The model is tested to compare experimental data of the coercive force with a calculated value.

  12. MnxGa1-x nanodots with high coercivity and perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Karel, J.; Casoli, F.; Lupo, P.; Celegato, F.; Sahoo, R.; Ernst, B.; Tiberto, P.; Albertini, F.; Felser, C.

    2016-11-01

    A MnxGa1-x (x = 0.70) epitaxial thin film with perpendicular magnetic anisotropy and a large coercivity (μ0Hc = 1 T) was patterned into nanodots using a combined self-assembly nanolithography and plasma etching procedure. Nanostructuring is achieved by self-assembly of polystyrene nanospheres acting as a mask on the magnetic film. This procedure allows easy patterning of a large area although introduced some chemical disorder, which resulted in a soft magnetic component in the magnetic hysteresis loops. However, chemical order was recovered after vacuum annealing at low temperature. The resulting nanodots retain the properties of the original film, i.e. magnetization oriented perpendicular to the particle and large coercivity. Our results suggest this lithography procedure could be a promising direction for nanostructuring tetragonal Heusler alloys.

  13. Perpendicularly magnetized (001)-textured D0{sub 22} MnGa films grown on an (Mg{sub 0.2}Ti{sub 0.8})O buffer with thermally oxidized Si substrates

    SciTech Connect

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-10-28

    We report the growth of (001)-textured polycrystalline D0{sub 22} MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg{sub 0.2}Ti{sub 0.8})O (MTO) buffer layer. The ordered D0{sub 22} MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m{sup 3}, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D0{sub 22} MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates.

  14. Dependence of the Perpendicular Residual Leakage Magnetic Flux Density on Fatigue Damage in an Austenitic Stainless Steel

    NASA Astrophysics Data System (ADS)

    Oka, M.; Yakushiji, T.; Tsuchida, Y.; Enokizono, M.

    2003-03-01

    In order to estimate the amount of plane bending fatigue damage in an austenitic stainless steel (SUS304), we were investigating the relationship between plane bending fatigue damage and the perpendicular residual leakage magnetic flux density caused by martensitic structure induced by plane bending fatigue. A specimen such as SUS304 had been excited in a constant external magnetic field perpendicularly to measure dependence of the perpendicular residual leakage magnetic flux density on plane bending fatigue damage accurately. The Z component of the magnetic flux density at 1 mm above a specimen is measured by using a thin-film flux-gate (FG) magnetic sensor. Residual magnetization is caused by partial martensitic structure in an austenitic stainless steel induced by cyclic bending stress. From our experiments, we can evaluate dependence of the perpendicular residual leakage magnetic flux density on plane bending fatigue damage and know the relationship between growth of a crack and the perpendicular residual leakage magnetic flux density.

  15. Current-driven asymmetric magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures

    NASA Astrophysics Data System (ADS)

    Torrejon, Jacob; Garcia-Sanchez, Felipe; Taniguchi, Tomohiro; Sinha, Jaivardhan; Mitani, Seiji; Kim, Joo-Von; Hayashi, Masamitsu

    2015-06-01

    The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain-wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic instabilities via spin transfer torques (STT). At interface(s), spin current generated from the spin Hall effect in a neighboring layer can exert torques, referred to as the spin Hall torques, on the magnetic moments. Here, we study current-induced magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures with a heavy metal (HM) underlayer. Depending on the thickness of the HM underlayer, we find distinct differences in the in-plane field dependence of the threshold switching current. The STT is likely responsible for the magnetization reversal for the thinner underlayer films whereas the spin Hall torques cause the switching for thicker underlayer films. For the latter, we find differences in the switching current for positive and negative currents and initial magnetization directions. We find that the growth process during the film deposition introduces an anisotropy that breaks the symmetry of the system and causes the asymmetric switching. The presence of such symmetry-breaking anisotropy enables deterministic magnetization switching at zero external fields.

  16. Tetragonal Heusler-Like Mn-Ga Alloys Based Perpendicular Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Ma, Qinli; Sugihara, Atsushi; Suzuki, Kazuya; Zhang, Xianmin; Miyazaki, Terunobu; Mizukami, Shigemi

    2014-10-01

    Films of the Mn-based tetragonal Heusler-like alloys, such as Mn-Ga, exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn-based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

  17. Spin Hall Control of Magnetization in a Perpendicularly-Magnetized Magnetic Insulator

    NASA Astrophysics Data System (ADS)

    Pai, Chi-Feng; Quindeau, Andy; Tang, Astera; Onbasli, Mehmet; Mann, Maxwell; Caretta, Lucas; Ross, Caroline; Beach, Geoffrey

    Spin Hall effect (SHE)-induced spin-orbit torque (SOT) has been shown to be an efficient mechanism to control the magnetization in magnetic heterostructures. Although numerous works have demonstrated the efficacy of SOT in manipulating the magnetization of ferromagnetic metals (FM), SOT-controlled switching of ferromagnetic insulators (FMIs) has not yet been observed. In this work we show that spin Hall currents in Pt and Ta can generate SOTs strong enough to control the magnetization direction in an adjacent thulium iron garnet FMI film with perpendicular magnetic anisotropy. We find that dc current in the heavy metal (HM) generates an out-of-plane effective field in the FMI consistent with an antidamping torque whose magnitude is comparable to that observed in all-metallic systems. Spin Hall magnetoresistance (SMR) measurements reveal a large spin-mixing conductance, which implies considerable spin transparency at the metal/insulator interface and explains the observed strong current-induced torque. Our results show that charge currents flowing in a HM can be used to both control and detect the magnetization direction in a FMI electrically.

  18. Copper dusting effects on perpendicular magnetic anisotropy in Pt/Co/Pt tri-layers

    NASA Astrophysics Data System (ADS)

    Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S.

    2016-05-01

    The effect of Cu dusting on perpendicular magnetic anisotropy of sputter grown Pt/Co/Pt stack in which the Cu layer is in proximity with that of Co is investigated in this work. We used magneto optic Kerr effect microscopy measurements to study the variation in the reversal mechanisms in films with Co thicknesses below 0.8nm by systematically varying their perpendicular magnetic anisotropy using controlled Cu dusting. Cu dusting was done separately above and below the cobalt layer in order to understand the role of bottom and top Pt layers in magnetization reversal mechanisms of sputtered Pt/Co/Pt stack. The introduction of even 0.3nm thick Cu layer below the cobalt layer drastically affected the perpendicular magnetic anisotropy as evident from the nucleation behavior. On the contrary, even a 4nm thick top Cu layer had little effect on the reversal mechanism. These observations along with magnetization data was used to estimate the role of top and bottom Pt in the origin of perpendicular magnetic anisotropy as well as magnetization switching mechanism in Pt/Co/Pt thin films. Also, with an increase in the bottom Cu dusting from 0.2 to 0.4nm there was an increase in the number of nucleation sites resulting in the transformation of domain wall patterns from a smooth interface type to a finger like one and finally to maze type.

  19. Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode

    NASA Astrophysics Data System (ADS)

    Kubota, T.; Mizukami, S.; Ma, Q. L.; Naganuma, H.; Oogane, M.; Ando, Y.; Miyazaki, T.

    2014-05-01

    Epitaxially grown tetragonal and cubic Mn-Co-Ga thin films were fabricated onto single crystalline Cr (001) under a layer. High perpendicular magnetic anisotropy is achieved in the tetragonal Mn2.3Co0.4Ga1.3 film, and a small, unexpected perpendicular magnetic anisotropy was induced in the cubic Mn1.8Co1.2Ga1.0 film as well. The tunnel magnetoresistance (TMR) effect of the Mn-Co-Ga/MgO/CoFeB magnetic tunnel junctions (MTJs) were investigated. TMR ratios of 5% and 11% were observed at room temperature for the MTJs using tetragonal Mn2.3Co0.4Ga1.3 and cubic Mn1.8Co1.2Ga1.0 electrodes, respectively. The composition dependence is discussed briefly.

  20. Variable variance Preisach model for multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Franco, A. F.; Gonzalez-Fuentes, C.; Morales, R.; Ross, C. A.; Dumas, R.; Åkerman, J.; Garcia, C.

    2016-08-01

    We present a variable variance Preisach model that fully accounts for the different magnetization processes of a multilayer structure with perpendicular magnetic anisotropy by adjusting the evolution of the interaction variance as the magnetization changes. We successfully compare in a quantitative manner the results obtained with this model to experimental hysteresis loops of several [CoFeB/Pd ] n multilayers. The effect of the number of repetitions and the thicknesses of the CoFeB and Pd layers on the magnetization reversal of the multilayer structure is studied, and it is found that many of the observed phenomena can be attributed to an increase of the magnetostatic interactions and subsequent decrease of the size of the magnetic domains. Increasing the CoFeB thickness leads to the disappearance of the perpendicular anisotropy, and such a minimum thickness of the Pd layer is necessary to achieve an out-of-plane magnetization.

  1. Lubricant Supply from Crystal Boundaries of Perpendicular Magnetic Disk Evaluated by Lateral Modulation Friction Force Microscopy

    NASA Astrophysics Data System (ADS)

    Miyake, Shojiro; Takahashi, Yuuzi; Wang, Mei; Saitoh, Tadashi; Matsunuma, Satoshi

    2004-11-01

    The tribological behavior of perfluoropolyether (PFPE) films attached to perpendicular recording magnetic disks coated with diamondlike carbon (DLC) was studied in lateral vibration wear tests using lateral modulus friction force microscopy (LM-FFM). The viscoelastic and frictional properties of these PFPE films without heat cure were improved due to the lubricant supply by tip sliding. However, the PFPE films were easily removed with increasing load and lateral vibration amplitude following heat treatment since the free lubricants on the films solidified resulting in the lost of fluidity.

  2. Perpendicular magnetic anisotropy in Ta/Co2FeAl/MgO multilayers

    NASA Astrophysics Data System (ADS)

    Gabor, M. S.; Petrisor, T.; Tiusan, C.; Petrisor, T.

    2013-08-01

    In this paper, we demonstrate the stabilization of perpendicular magnetic anisotropy (PMA) in Ta/Co2FeAl/MgO multilayers sputtered on thermally oxidized Si(100) substrates. The magnetic analysis points out that these films show significant interfacial anisotropy even in the as-deposited state, KS=0.67 erg/cm2, enough to provide PMA for the as-deposited films with thicknesses below 1.5 nm. Moreover, the interfacial anisotropy is enhanced by thermal annealing up to 300 °C. The presence of a magnetic dead layer, whose thickness increases with annealing temperature, was also identified.

  3. Second order anisotropy contribution in perpendicular magnetic tunnel junctions

    PubMed Central

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Nguyen, H. T.; Dieny, B.

    2016-01-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form −K2cos4θ must be added to the conventional uniaxial –K1cos2θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated −K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from “easy-axis” to “easy-cone” regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface. PMID:27246631

  4. Second order anisotropy contribution in perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Nguyen, H. T.; Dieny, B.

    2016-06-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form ‑K2cos4θ must be added to the conventional uniaxial –K1cos2θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated ‑K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from “easy-axis” to “easy-cone” regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface.

  5. Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector

    NASA Astrophysics Data System (ADS)

    Lee, Dukhyung; Kim, Dai-Sik

    2016-01-01

    We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet’s principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet’s principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies.

  6. Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector.

    PubMed

    Lee, Dukhyung; Kim, Dai-Sik

    2016-01-01

    We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet's principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet's principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies. PMID:26740335

  7. Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector.

    PubMed

    Lee, Dukhyung; Kim, Dai-Sik

    2016-01-07

    We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet's principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet's principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies.

  8. Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector

    PubMed Central

    Lee, Dukhyung; Kim, Dai-Sik

    2016-01-01

    We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet’s principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet’s principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies. PMID:26740335

  9. Perpendicular magnetic anisotropy in the Heusler alloy Co2TiSi/GaAs(001) hybrid structure

    NASA Astrophysics Data System (ADS)

    Dau, M. T.; Jenichen, B.; Herfort, J.

    2015-05-01

    Investigation of the thickness dependence of the magnetic anisotropy in B2-type Co2TiSi films on GaAs(001), shows a pronounced perpendicular magnetic anisotropy at 10 K for thicknesses up to 13.5 nm. We have evidenced that the interfacial anisotropy induced by interface clusters has a strong influence on the perpendicular magnetic anisotropy of this hybrid structure, especially at temperatures lower than the blocking temperature of the clusters (28 K). However, as this influence can be ruled out at higher temperatures, the perpendicular magnetic anisotropy which is found to persist up to room-temperature can be ascribed to the magnetic properties of the Co2TiSi films. For thicknesses larger than 15.0 nm, we observe an alignment of the magnetic easy axis parallel to the sample surface, which is most likely due to the shape anisotropy and the film structure.

  10. Perpendicularly magnetized spin filtering Cu/Ni multilayers

    SciTech Connect

    Shirahata, Yasuhiro; Wada, Eiji; Itoh, Mitsuru; Taniyama, Tomoyasu

    2014-01-20

    Spin filtering at perpendicular magnetized Cu/Ni multilayer/GaAs(001) interfaces is demonstrated at remanence using optical spin orientation method. [Cu(9 nm)/Ni(t{sub Ni} nm)]{sub n} multilayers are found to show a crossover from the in-plane to out-of-plane magnetic anisotropy at the Cu/Ni bilayer repetition n = 4 and the Ni layer thickness t{sub Ni} = 3. For a perpendicularly magnetized Cu/Ni multilayer/n-GaAs(001) interface, circular polarization dependent photocurrent shows a clear hysteretic behavior under optical spin orientation conditions as a function of magnetic field out-of-plane while the bias dependence exhibits a substantial peak at a forward bias, verifying that Cu/Ni multilayers work as an efficient spin filter in the remanent state.

  11. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  12. Interaction of Ta-O and perpendicular magnetic anisotropy of Ta/Pd (0-2.4 nm)/Co2FeAl0.5Si0.5/MgO/Ta structured films

    NASA Astrophysics Data System (ADS)

    You, C. Y.; Fu, H. R.; Zhang, X.; Tian, N.; Wang, P. W.

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) was realized by inserting Pd layer into the stack of Ta/Pd (0-2.4 nm)/Co2FeAl0.5Si0.5/MgO/Ta. The realization of PMA is accompanied by the (Co, Fe)-O reduction at Co2FeAl0.5Si0.5/MgO interface under annealing. Without inserting Pd layer, the annealed Ta/Co2FeAl0.5Si0.5/MgO/Ta film presents an in-plane magnetization. Through X-ray photoelectron spectrometry analyzes, it was found that the oxygen was enriched at the interface of Ta/Co2FeAl0.5Si0.5. This work clarifies that the inserted Pd layer effectively blocks the diffusion of interfacial oxygen to Ta layer, achieving the beneficial redox reaction at Co2FeAl0.5Si0.5/MgO interface to realize PMA.

  13. Ferromagnetic resonance of exchange-coupled perpendicularly magnetized bilayers

    NASA Astrophysics Data System (ADS)

    Devolder, Thibaut

    2016-04-01

    Strong ferromagnetic interlayer exchange couplings J in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination of broadband ferromagnetic resonance methods and magnetometry hysteresis loops. For this, we model the switching and the eigenexcitations in bilayer systems comprising a soft layer coupled to a thicker harder layer that possesses higher perpendicular magnetic anisotropy. For large J > 0, the switching fields are essentially independent of J but the frequency of the optical eigenmode of the bilayer and the linewidth of the acoustical and optical eigenmode are directly sensitive to the coupling. We derive a corpus of compact analytical expressions to analyze these frequencies, their linewidth and discuss the meaning thereof. We illustrate this corpus on a system mimicking the fixed layers of a magnetic tunnel junction meant for spin torque applications.

  14. Giant perpendicular magnetocrystalline anisotropy of 3d transition-metal thin films on MgO

    SciTech Connect

    Nakamura, Kohji Ikeura, Yushi; Akiyama, Toru; Ito, Tomonori

    2015-05-07

    Magnetocrystalline anisotropy (MCA) of the Fe-based transition-metal thin films was investigated by means of first principles full-potential linearized augmented plane wave method. A giant perpendicular MCA (PMCA), up to 3 meV, was confirmed in a 7-layer Fe-Ni film/MgO(001), where an Fe{sub 2}/Ni/Fe/Ni/Fe{sub 2} atomic-layer alignment with a bcc-like-layer stacking and the Fe/MgO interfaces play key roles for leading to the large PMCA. Importantly, we find that the PMCA overcomes enough over the magnetic dipole-dipole anisotropy that favors the in-plane magnetization even when the film thickness increases.

  15. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    NASA Astrophysics Data System (ADS)

    An, Hongyu; Wang, Jian; Szivos, Janos; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Safran, Gyorgy; Nakamura, Yoshio; Shi, Ji

    2015-11-01

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N2 into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L10 ordering transformation of CoPt.

  16. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    SciTech Connect

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Wang, Jian; Szivos, Janos; Safran, Gyorgy

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  17. Growth-induced perpendicular magnetic anisotropy and clustering in Ni xPt 1- x alloys

    NASA Astrophysics Data System (ADS)

    Vasumathi, D.; Shapiro, A. L.; Maranville, B. B.; Hellman, F.

    2001-02-01

    Polycrystalline and epitaxial (1 0 0), (1 1 0), and (1 1 1)-oriented Ni 3Pt, NiPt, and NiPt 3 films were deposited over a range of growth temperatures from 80°C to 700°C. Films grown at moderate temperatures (200-400°C) exhibit growth-induced properties similar to Co-Pt alloys: enhanced and broadened Curie temperature, perpendicular magnetic anisotropy and large coercivity. As in Co-Pt, the magnetic properties suggest a clustering of Ni into platelets on the growth surface, as the films are being grown. Unlike Co-Pt, however, NiPt films exhibit a strong orientational dependence of anisotropy and enhanced Curie temperature, possibly resulting from different types of surface reconstructions which affect the growth surface.

  18. Antiferromagnet-induced perpendicular magnetic anisotropy in ferromagnetic/antiferromagnetic/ferromagnetic trilayers

    NASA Astrophysics Data System (ADS)

    Wang, Bo-Yao; Lin, Po-Han; Tsai, Ming-Shian; Shih, Chun-Wei; Lee, Meng-Ju; Huang, Chun-Wei; Jih, Nae-Yeou; Wei, Der-Hsin

    2016-08-01

    This study demonstrates the effect of antiferromagnet-induced perpendicular magnetic anisotropy (PMA) on ferromagnetic/antiferromagnetic/ferromagnetic (FM/AFM/FM) trilayers and reveals its interplay with a long-range interlayer coupling between separated FM layers. In epitaxially grown 12 monolayer (ML) Ni/Co/Mn/5 ML Co/Cu(001) films, magnetic hysteresis loops and element-resolved magnetic domain imaging showed that the magnetization direction of the top layers of 12 ML Ni/Co films could be changed from the in-plane direction to the perpendicular direction, when the thickness of the Mn films (tMn) was greater than a critical value close to the thickness threshold associated with the onset of AFM ordering (tMn=3.5 ML). The top FM layers exhibited a significantly enhanced PMA when tMn increased further, and this enhancement can be attributed to a strengthened AFM ordering of the volume moments of the Mn films, as evidenced by the presence of induced domain frustration. By contrast, the long-range interlayer coupling presented clear effects only when tMn was at a lower coverage.

  19. Effect of interlayer interaction on domain structure of CoPt stacked films with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Kawamura, H.; Hayakawa, K.; Nomiya, N.; Sugita, R.

    2015-05-01

    The effect of interlayer magnetostatic interaction on the domain structure of CoPt (3 nm)/Pt (δPt nm)/CoPt (10 nm) stacked films having perpendicular anisotropy is investigated. The domain structure of the demagnetized CoPt stacked films is observed using magnetic force microscope. The Co80Pt20 stacked films with Pt interlayer thickness δPt less than about 20 nm have the maze domain similar to that of the film with δPt of 0 nm. This is because the top and bottom layers are connected by the magnetostatic interaction and the magnetization distribution of both layers is integrated. The domain structure of the films with δPt around 25 nm is mixture of the maze and irregular domains. For the films with δPt over about 30 nm, because the interaction between the top and bottom layers decreases, the irregular domain which is observed in the 3 nm thick CoPt single layer film appears. In the region where the domain structure changes from the maze domain to the irregular one, domain size steeply increases with increase of δPt.

  20. Dynamical mechanism for coercivity tunability in the electrically controlled FePt perpendicular films with small grain size

    SciTech Connect

    Feng, Chun Li, Xujing; Jiang, Yong; Yu, Guanghua; Yang, Meiyin; Gong, Kui; Li, Baohe

    2014-01-14

    This article reports property manipulations and related dynamical evolution in electromigration controlled FePt perpendicular films. Through altering voltage and treatment time of the power supply applied on the films, electronic momentum was fleetly controlled to manipulate the kinetic energy of Fe and Pt atoms based on momentum exchanges. The electromigration control behavior was proven to cause steerable ordering degree and grain growth in the films without thermal treatment. Processed FePt films with small grain size, high magnetocrystalline anisotropy, and controllable coercivity can be easily obtained. The results provide a novel method for tuning magnetic properties of other L1{sub 0} structured films.

  1. The study of perpendicular magnetic anisotropy in the magnetic sensors with linear sensitivity using polarized neutron reflectometry

    NASA Astrophysics Data System (ADS)

    Zhu, T.

    2016-04-01

    The CoFeB sandwiched by Ta and MgO layers enables a perpendicular magnetic anisotropy (PMA) and provides a pathway for such application. In this paper, we reported the origin of PMA in CoFeB using the anomalous Hall effect (AHE) and polarized neutron reflectometry (PNR). From PNR experiments, we obtained the details of the magnetic and structural depth profiles inside the film. It is found that the PMA properties of CoFeB layers deposited above and under MgO layer are different and PNR measurements confirmed that a large PMA in the CoFeB above MgO layer is related to its low magnetization. Based on this PMA mechanism, we obtain a high sensitivity of AHE in the perpendicular CoFeB, which opens a new avenue to detect ultralow magnetic field.

  2. Characteristics of thermally assisted magnetic recording in granular perpendicular media

    SciTech Connect

    Shiino, Hirotaka; Kawana, Mayumi; Miyashita, Eiichi; Hayashi, Naoto; Watanabe, Sadayuki

    2009-04-01

    The effect of thermally assisted magnetic recording using granular perpendicular media with a single-pole-trimmed head has been investigated. A read/write experiment using a spin stand in which the media were heated by laser irradiation demonstrated that the track average amplitude strongly depends on both the position of the write head relative to the center of the laser spot in the down-track direction and on the laser power. Although the signal-to-noise ratio increased with the coercivity of the media, the increment was small; this is thought to be caused by an increase in the switching field distribution of the media with temperature. Our results suggest that the magnetic constant of the media must be optimized with respect to the temperature of writing in order for high-density thermally assisted magnetic recording to be realized.

  3. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Tryputen, Larysa; Tu, Kun-Hua; Piotrowski, Stephan K.; Bapna, Mukund; Majetich, Sara A.; Sun, Congli; Voyles, Paul M.; Almasi, Hamid; Wang, Weigang; Vargas, Patricio; Tresback, Jason S.; Ross, Caroline A.

    2016-05-01

    Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both ‘up’ or both ‘down’ following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

  4. Ordering classification of columnar lattices formed in magnetic fluid subjected to perpendicular fields

    NASA Astrophysics Data System (ADS)

    Jiang, I. M.; Wang, C. Y.; Tsai, M. S.; Horng, H. E.; Hong, C. Y.

    2001-07-01

    When the thin film of high-quality magnetic fluid is subjected to a perpendicular magnetic field, a separation of particles from the liquid matrix will occur, leading to a phase transition with a phase that is concentrated in particles separating from a dilute phase. The concentrated phase makes up the cylindrical columns that can form two-dimensional lattices. We have explored the field-induced lattices with optical microscopy, digital imaging and computer-video techniques in this study, to classify the ordering property in terms of bond-orientation order.

  5. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

    NASA Astrophysics Data System (ADS)

    Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.

    2016-04-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.

  6. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.

    PubMed

    Zhang, S F; Gan, W L; Kwon, J; Luo, F L; Lim, G J; Wang, J B; Lew, W S

    2016-01-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 10(11) A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. PMID:27098108

  7. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

    PubMed Central

    Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.

    2016-01-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. PMID:27098108

  8. Spin-wave spectra of perpendicularly magnetized circular submicron dot arrays

    NASA Astrophysics Data System (ADS)

    Kakazei, G. N.; Wigen, P. E.; Guslienko, K. Yu.; Novosad, V.; Slavin, A. N.; Golub, V. O.; Lesnik, N. A.; Otani, Y.

    2004-07-01

    Dynamic microwave properties of arrays of circular Ni and Ni81Fe19 dots were studied by X-band ferromagnetic resonance (FMR) technique. All of the dots had the same radius 0.5μm, thickness 50-70nm, and were arranged into rectangular or square array with different interdot separations. In the case of perpendicular magnetization multiple (up to 8) sharp resonance peaks were observed below the main FMR peak, and the relative positions of these peaks were independent of the interdot separations. Quantitative description of the observed multiresonance FMR spectra is given using the dipole-exchange spin wave dispersion equation for a perpendicularly magnetized film where in-plane wave vector is quantized due to the finite dot radius, and the inhomogenetiy of the intradot static demagnetization field in the nonellipsoidal dot is taken into account.

  9. Giant Perpendicular Magnetic Anisotropy of Graphene-Co Heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Hongxin; Hallal, Ali; Chshiev, Mairbek; Spintec theory Team

    We report strongly enhanced perpendicular anisotropy (PMA) of Co films by graphene coating via ab-initio calculations. The results show that graphene coating can improve the surface anisotropy of Co film up to twice large of the bare Co case and keep the film effective anisotropy being out-of-plane till 25 Å of Co, in agreement with experiments. Our layer resolved analysis reveals that PMA of Co (Co/Gr) films mainly originates from the adjacent 3 Co layers close to surface (interface) and can be strongly influenced by graphene. Furthermore, orbital hybridization analysis uncovers the origin of the PMA enhancement which is due to graphene-Co bonding causing an inversion of Co 3dz 2 and 3dx 2 - y 2 Bloch states close to Fermi level. Finally, we propose to design Co-graphene heterostructures which possess a linearly increasing surface anisotropy and a constant effective anisotropy. These findings point towards a possible engineering graphene-Co junctions with giant anisotropy, which stands as a hallmark for future spintronic information processing. This work was supported by European Graphene Flagship, European Union-funded STREP project CONCEPT-GRAPHENE, French ANR Projects NANOSIM-GRAPHENE and NMGEM

  10. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy.

    PubMed

    Ma, Q L; Zhang, X M; Miyazaki, T; Mizukami, S

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (K(u)(eff)) over 6 Merg/cm(3) is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and K(u)(eff) of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory. PMID:25597496

  11. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    PubMed Central

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory. PMID:25597496

  12. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

  13. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy.

    PubMed

    Ma, Q L; Zhang, X M; Miyazaki, T; Mizukami, S

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (K(u)(eff)) over 6 Merg/cm(3) is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and K(u)(eff) of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

  14. SrFeO amorphous underlayer for fabrication of c-axis perpendicularly orientated strontium hexaferrite films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Ong, C. K.

    2013-09-01

    A thin amorphous SrFeO underlayer on Si(100) substrate was pulse laser deposited as an underlayer for the growth of c-axis perpendicularly oriented strontium hexaferrite (SrFe12O19) films. The amorphous SrFeO underlayer was deposited at different temperatures in the range from room temperature to 700 °C, while the SrFe12O19 film was deposited at 700 °C. The SrFe12O19 films exhibited slightly perpendicular magnetic anisotropy by the rather higher coercivities in perpendicular direction (Hc⊥) than those for the in-plane direction (Hc||), due to the c-axis perpendicular orientation. The magnetization and coercivities of the SrFe12O19 film increase, but the magnetic anisotropy (ΔHc=Hc⊥-Hc||) increases firstly and then decreases, as the SrFeO underlayer deposition temperature increases.

  15. Pulse electrodeposition and electrochemical quartz crystal microbalance techniques for high perpendicular magnetic anisotropy cobalt nanowire arrays

    NASA Astrophysics Data System (ADS)

    Ursache, Andrei; Goldbach, James T.; Russell, Thomas P.; Tuominen, Mark T.

    2005-05-01

    This research is focused on the development of pulse electrodeposition techniques to fabricate a high-density array of vertically oriented, high-magnetic anisotropy cobalt nanowires using a porous polymer film template. This type of array is a competitive candidate for future perpendicular magnetic media capable of storage densities exceeding 1Terabit/in.2 The polymer template, derived from a self-assembling P(S-b-MMA) diblock copolymer film, provides precise control over the nanowire diameter (15nm) and interwire spacing (24nm), whereas nanowire length (typically 50to1000nm) is controlled accurately with the aid of real-time electrochemical quartz crystal monitoring. Pulse and pulse-reversed electrodeposition techniques, as compared to dc, are shown to significantly enhance the perpendicular magnetic anisotropy of the magnetic nanowire array and ultimately result in coercivity as large as 2.7kOe at 300K. Magnetic and structural characterizations suggest that these properties arise from an improved degree of magnetocrystalline anisotropy (due to c-axis oriented crystal growth and improvements in crystal quality) that strongly supplements the basic shape anisotropy of the nanowires. Low temperature magnetometry is used to investigate exchange bias effects due to the incorporation of CoO antiferromagnetic impurities during the electrodeposition process and subsequent Co oxidation in air.

  16. Kinetic theory of weak turbulence in magnetized plasmas: Perpendicular propagation

    SciTech Connect

    Yoon, Peter H.

    2015-08-15

    The present paper formulates a weak turbulence theory in which electromagnetic perturbations are assumed to propagate in directions perpendicular to the ambient magnetic field. By assuming that all wave vectors lie in one direction transverse to the ambient magnetic field, the linear solution and second-order nonlinear solutions to the equation for the perturbed distribution function are obtained. Nonlinear perturbed current from the second-order nonlinearity is derived in general form, but the limiting situation of cold plasma temperature is taken in order to derive an explicit nonlinear wave kinetic equation that describes three-wave decay/coalescence interactions among X and Z modes. A potential application of the present formalism is also discussed.

  17. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m‑1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  18. Field driven ferromagnetic phase evolution originating from the domain boundaries in antiferromagnetically coupled perpendicular anitsotropy films

    SciTech Connect

    Jones, Juanita; Hauet, Thomas; Gunther, Christian; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

    2008-05-01

    Strong perpendicular anisotropy systems consisting of Co/Pt multilayer stacks that are antiferromagnetically coupled via thin Ru or NiO layers have been used as model systems to study the competition between local interlayer exchange and long-range dipolar interactions [1,2]. Magnetic Force Microscopy (MFM) studies of such systems reveal complex magnetic configurations with a mix of antiferromagnetic (AF) and ferromagnetic (FM) phases. However, MFM allows detecting surface stray fields only and can interact strongly with the magnetic structure of the sample, thus altering the original domain configuration of interest [3,4]. In the current study they combine magnetometry and state-of-the-art soft X-ray transmission microscopy (MXTM) to investigate the external field driven FM phase evolution originating from the domain boundaries in such antiferromagnetically coupled perpendicular anisotropy films. MXTM allows directly imaging the perpendicular component of the magnetization in an external field at sub 100 nm spatial resolution without disturbing the magnetic state of the sample [5,6]. Here they compare the domain evolution for two similar [Co(4{angstrom})/Pt(7{angstrom})]x-1/{l_brace}Co(4{angstrom})/Ru(9{angstrom})/[Co(4{angstrom})/Pt(7{angstrom})]x-1{r_brace}16 samples with slightly different Co/Pt stack thickness, i.e. slightly different strength of internal dipolar fields. After demagnetization they obtain AF domains with either sharp AF domain walls for the thinner multilayer stacks or 'tiger-tail' domain walls (one dimensional FM phase) for the thicker stacks. When increasing the external field strength the sharp domain walls in the tinner stack sample transform into the one-dimensional FM phase, which then serves as nucleation site for further FM stripe domains that spread out into all directions to drive the system towards saturation. Energy calculations reveal the subtle difference between the two samples and help to understand the observed transition, when

  19. Surfactant-Directed Synthesis of Mesoporous Pd Films with Perpendicular Mesochannels as Efficient Electrocatalysts.

    PubMed

    Li, Cuiling; Jiang, Bo; Miyamoto, Nobuyoshi; Kim, Jung Ho; Malgras, Victor; Yamauchi, Yusuke

    2015-09-16

    Palladium (Pd) films with perpendicularly aligned mesochannels are expected to provide fascinating electrocatalytic properties due to their low diffusion resistance and the full utilization of their large surface area. There have been no studies on such mesoporous metal films, because of the difficulties in controlling both the vertical alignment of the molecular template and the crystal growth in the metallic pore walls. Here we report an effective approach for the synthesis of mesoporous Pd films with mesochannels perpendicularly aligned to the substrate by an elaborated electrochemical deposition. The films show a superior electrocatalytic activity by taking full advantage of the perpendicularly aligned mesochannels.

  20. Hysteresis, critical fields and superferromagnetism of the film with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Kalita, V. M.; Kulyk, M. M.; Ryabchenko, S. M.

    2016-08-01

    This paper is focused on the analysis of hysteresis and critical phenomena of magnetization reversal of superferromagnetic (SFM) state in nanogranular (NG) Co/Al2O3 film with perpendicular anisotropy. It was demonstrated that the transition from the multidomain SFM state to the homogeneous SFM state, during the magnetization process, occurs critically. The value of the field of critical transition to the homogeneous state depends on the demagnetization field, granular anisotropy and interparticle exchange anisotropy. It turned out that the temperature dependence of the coercive force of the film, despite its SFM state, accords with the Neel-Brown formula for anisotropic single-domain ferromagnetic particles, but has an anomalous angular dependence. It was concluded that domain wall motion affects these features of the coercive field. The domain wall movement may occur due to the overturn of magnetic moments of particles in the boundaries between the superdomains. At the same time, the main factors influencing the coercivity are the anisotropy of the particles, which blocks their magnetic moment reorientation, and demagnetizing factor of the film. Together they lead to the anomalous angular dependence of the coercive field.

  1. Critical current destabilizing perpendicular magnetization by the spin Hall effect

    NASA Astrophysics Data System (ADS)

    Taniguchi, Tomohiro; Mitani, Seiji; Hayashi, Masamitsu

    2015-07-01

    The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect are included in the Landau-Lifshitz-Gilbert equation to model the system. In the absence of the fieldlike torque, the critical current is independent of the damping constant and is much larger than that of conventional spin torque switching of collinear magnetic systems, as in magnetic tunnel junctions. With the fieldlike torque included, we find that the critical current scales with the damping constant as α0 (i.e., damping independent), α , and α1 /2 depending on the sign of the fieldlike torque and other parameters such as the external field. Numerical and analytical results show that the critical current can be significantly reduced when the fieldlike torque possesses the appropriate sign, i.e., when the effective field associated with the fieldlike torque is pointing opposite to the spin direction of the incoming electrons. These results provide a pathway to reducing the current needed to switch magnetization using the spin Hall effect.

  2. Magnetic properties of a Pt/Co2FeAl/MgO structure with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Qi; Xu, Xiao-Guang; Wang, Sheng; Wu, Yong; Zhang, De-Lin; Miao, Jun; Jiang, Yong

    2012-10-01

    Microstructures and magnetic properties of Ta/Pt/Co2FeAl (CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy (PMA) of half-metallic full-Heusler alloy films. PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope. It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA. The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature. At the intersection points, the decreasing slope of the saturation magnetization (Ms) changes because of the conversions. The dependence of Ms on the annealing temperature and MgO thickness is also studied.

  3. Dot arrays of L1{sub 1} type Co-Pt ordered alloy perpendicular films

    SciTech Connect

    Shimatsu, T.; Mitsuzuka, K.; Aoi, H.; Sato, H.; Kataoka, H.; Okamoto, S.; Kitakami, O.

    2009-04-01

    Magnetic properties of dot arrays of L1{sub 1} type Co-Pt ordered alloy perpendicular films were studied. L1{sub 1}-Co-Pt films with a large uniaxial magnetic anisotropy K{sub u} of the order of 10{sup 7} erg/cm{sup 3} were fabricated at a substrate temperature of 360 deg. C using ultrahigh vacuum sputter film deposition. Dot patterns with dot diameters of 70-200 nm were made using high resolution e-beam lithography and reactive ion etching (RIE). The values of K{sub u} were measured by the GST method using the Anomalous Hall Effect; we observed the averaged signals of 6000 dots. The values of K{sub u} for dot arrays of 10-nm-thick L1{sub 1}-Co{sub 50}Pt{sub 50} films deposited on MgO(111) substrates (single crystal films) and glass disks (polycrystalline films) were nearly the same as those of the original films independent of D, indicating no significant etching damage by the RIE process. Magnetic force microscopy images revealed that all dots were single domains in the present D region. The coercivity H{sub c} of the dot arrays was 25.0 kOe [MgO(111) substrate, D=70 nm] and 14.3 kOe (glass disks, D=80 nm). The switching field distribution {sigma}/H{sub c} was relatively small, {sigma}/H{sub c}=0.15, even for dot arrays fabricated on glass disks, indicating the homogeneous formation of a L1{sub 1} type ordered structure in the Co{sub 50}Pt{sub 50} layers.

  4. Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

    SciTech Connect

    Guo, Peng; Feng, Jiafeng E-mail: jiafengfeng@iphy.ac.cn; Wei, Hongxiang E-mail: jiafengfeng@iphy.ac.cn; Han, Xiufeng; Fang, Bin; Zhang, Baoshun; Zeng, Zhongming

    2015-01-05

    We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

  5. Origin of Perpendicular Magnetic Anisotropy and Large Orbital Moment in Fe Atoms on MgO.

    PubMed

    Baumann, S; Donati, F; Stepanow, S; Rusponi, S; Paul, W; Gangopadhyay, S; Rau, I G; Pacchioni, G E; Gragnaniello, L; Pivetta, M; Dreiser, J; Piamonteze, C; Lutz, C P; Macfarlane, R M; Jones, B A; Gambardella, P; Heinrich, A J; Brune, H

    2015-12-01

    We report on the magnetic properties of individual Fe atoms deposited on MgO(100) thin films probed by x-ray magnetic circular dichroism and scanning tunneling spectroscopy. We show that the Fe atoms have strong perpendicular magnetic anisotropy with a zero-field splitting of 14.0±0.3  meV/atom. This is a factor of 10 larger than the interface anisotropy of epitaxial Fe layers on MgO and the largest value reported for Fe atoms adsorbed on surfaces. The interplay between the ligand field at the O adsorption sites and spin-orbit coupling is analyzed by density functional theory and multiplet calculations, providing a comprehensive model of the magnetic properties of Fe atoms in a low-symmetry bonding environment.

  6. Perpendicular propagating modes for weakly magnetized relativistic degenerate plasma

    SciTech Connect

    Abbas, Gohar; Bashir, M. F.; Murtaza, G.

    2012-07-15

    Using the Vlasov-Maxwell system of equations, the dispersion relations for the perpendicular propagating modes (i.e., X-mode, O-mode, and upper hybrid mode) are derived for a weakly magnetized relativistic degenerate electron plasma. By using the density (n{sub 0}=p{sub F}{sup 3}/3{pi}{sup 2} Planck-Constant-Over-Two-Pi {sup 3}) and the magnetic field values for different relativistic degenerate environments, the propagation characteristics (i.e., cutoff points, resonances, dispersions, and band widths in k-space) of these modes are examined. It is observed that the relativistic effects suppress the effect of ambient magnetic field and therefore the cutoff and resonance points shift towards the lower frequency regime resulting in enhancement of the propagation domain. The dispersion relations of these modes for the non-relativistic limit (p{sub F}{sup 2} Much-Less-Than m{sub 0}{sup 2}c{sup 2}) and the ultra-relativistic limit (p{sub F}{sup 2} Much-Greater-Than m{sub 0}{sup 2}c{sup 2}) are also presented.

  7. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    SciTech Connect

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-21

    Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  8. Modeling of irreversible switching and viscosity phenomena in perpendicular thin films

    NASA Astrophysics Data System (ADS)

    Pellicelli, R.; Pernechele, C.; Solzi, M.; Ghidini, M.

    2010-05-01

    We have developed a simple numerical model for simulating domains as well as remanence and viscosity curves in the slow dynamics regime, for thin films characterized by perpendicular magnetization and irregular domain configurations due to strong disorder. The physical system is represented as constituted of identical switching units, described by proper switching field distributions and energy barrier laws for pinning and nucleation processes. The model also includes an effective field which accounts for magnetic forces proportional to magnetization, on average. Simulations of DCD curves show that when the reversal of magnetization is governed by pinning, the coercive field depends on the physical size of the film area on which the external field is applied. In the case of viscosity phenomena described by a linear energy barrier law associated with a single predominant reversal process (pinning or nucleation), universal viscosity curves can be generated by properly transforming the DCD curve of the system. We also demonstrate that a reduction of the maximum viscosity coefficient can coexist with a reduction of the energy barrier heights.

  9. Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures

    SciTech Connect

    Cho, Eikhyun; Shin, Sang Chul; Han, Jungjin; Shim, Jongmyeong; Shin, Ryung; Kang, Shinill; Kim, Sanghoon; Hong, Jongill

    2015-01-26

    We proposed a method to fabricate perpendicular magnetic nanotracks in the cobalt oxide/palladium multilayer films using UV-nanoimprinting lithography and low-energy hydrogen-ion irradiation. This is a method to magnetize UV-imprinted intaglio nanotracks via low-energy hydrogen ion irradiation, resulting the irradiated region are magnetically separated from the non-irradiated region. Multilayered magnetic nanotracks with a line width of 140 nm, which were fabricated by this parallel process without additional dry etching process, exhibited a saturation magnetization of 290 emu cm{sup −3} and a coercivity of 2 kOe. This study demonstrates a cost-effective mass production of multilayered perpendicular magnetic nanotracks and offers the possibility to achieve high density storage and memory devices.

  10. Tuning the perpendicular magnetic anisotropy of co-based layers in multilayered systems.

    PubMed

    Angelakeris, M; Papaioannou, E Th; Poulopoulos, P; Kopsidis, M; Kalogirou, O; Flevaris, N K

    2010-09-01

    The combination of Pt with Co either in alloy or in multilayer form is widely studied among the potential magnetic media for ultrahigh density magnetic recording. On the other hand the combination of Co with Cr in alloy form is currently providing commercial magnetic media. In an effort to further exploit and benefit from both systems, we fabricated Co(1-x)Cr(x)/Pt multilayers with two adjustable parameters. The first one is the Cr concentration on CoCr layer (x = 0, 5, 30), which modulates segregation effects on Co grains, thus tunes macroscopic magnetic features such as saturation magnetization and coercive field. The second one is the small layer thickness (< or = 0.6 nm) that affects interlayer coupling, perpendicular magnetic anisotropy and magnetization enhancement through spin polarization of Pt atoms in a ferromagnetic environment. The X-ray diffraction patterns verified the existence of multilayered structures following a preferable face-centered-cubic stacking. The Pt thickness and Cr concentration are found to significantly affect the macroscopic magnetic behavior. It is remarkable the fact that, samples present perpendicular anisotropy that scales with Pt thickness and temperature, even in the case of significant Cr concentration (30% in the alloy) when ferromagnetic behavior is expected to diminish according to relevant studies in alloys and in bulk films. Such an effect may be attributed to spin-polarization of Pt interlayers and was evidenced by X-ray magnetic circular dichroism. The spin-polarization of Pt is also the drive for the strong magneto-optic enhancement in the ultra-violet region between 4.5 and 5 eV shown by magnetooptic Kerr spectroscopy. PMID:21133152

  11. Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy.

    PubMed

    Ueno, Tetsuro; Sinha, Jaivardhan; Inami, Nobuhito; Takeichi, Yasuo; Mitani, Seiji; Ono, Kanta; Hayashi, Masamitsu

    2015-01-01

    We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures. PMID:26456454

  12. Magnetic patterning using ion irradiation for highly ordered CoPt alloys with perpendicular anisotropy

    SciTech Connect

    Abes, M.; Venuat, J.; Muller, D.; Carvalho, A.; Schmerber, G.; Beaurepaire, E.; Dinia, A.; Pierron-Bohnes, V.

    2004-12-15

    We used a combination of ion irradiation and e-beam lithography to magnetically pattern an ordered CoPt alloy with strong perpendicular magnetic anisotropy. Ion irradiation disorders the alloy and strongly reduces the magnetic anisotropy. Magnetic force microscopy showed a regular array of 1 {mu}m{sup 2} square dots with perpendicular anisotropy separated by 1 {mu}m large ranges with in-plane anisotropy. This is further confirmed by magnetic measurements, which showed that arrays protected by a 200 nm Pt layer present the same coercive field and the same perpendicular anisotropy as before irradiation. This is promising for applications in magnetic recording technologies.

  13. Enhancing the perpendicular anisotropy of NdDyFeB films by Dy diffusion process

    NASA Astrophysics Data System (ADS)

    Gong, W. J.; Wang, X.; Liu, W.; Guo, S.; Wang, Z. H.; Cui, W. B.; Zhu, Y. L.; Zhang, Y. Q.; Zhang, Z. D.

    2012-04-01

    A large coercivity and anisotropy enhancement in perpendicular NdDyFeB (120 nm)/Dy (tDy) films has been realized by a Dy grain-boundary diffusion process. The coercivity HC and the ratio Mr/Ms reach their maxima at tDy = 50 nm, and the magnetic domain sizes increase with increasing tDy. The HC and Mr/Ms increasing with tDy is due to the enhancement of the anisotropy of (Nd,Dy)2Fe14B grains by Dy substitution for Nd. The coercivity mechanism is a nucleation-type mechanism. Dy and Nd elements coexist at grain boundaries, forming a (Nd,Dy)-rich phase, which may promote the nucleation of reversal domains.

  14. Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt-Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Hongxin; Vu, Anh Duc; Hallal, Ali; Rougemaille, Nicolas; Coraux, Johann; Chen, Gong; Schmid, Andreas K.; Chshiev, Mairbek

    2016-01-01

    We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~\\AA. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis which help understanding the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose super-exchange stabilized Co-graphene heterostructures with a robust out-of-plane constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point towards possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20 times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies.

  15. Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

    NASA Astrophysics Data System (ADS)

    Kim, Chang Soo

    The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier

  16. Manipulation of magnetism in perpendicularly magnetized Heusler alloy Co2FeAl0.5Si0.5 by electric-field at room temperature

    NASA Astrophysics Data System (ADS)

    Wang, H. L.; Wu, Y.; Yu, H. J.; Jiang, Y.; Zhao, J. H.

    2016-09-01

    The electrical manipulation of magnetic properties in perpendicularly magnetized Co2FeAl0.5Si0.5 ultra-thin films has been investigated. An electric-field is applied by utilizing either a solid-state dielectric HfO2 film or an ionic gel film as the gate insulator in the form of a field effect parallel capacitor. Obvious changes of the coercive field and Curie temperature (˜24 K) by gating voltage are observed for a 0.8 nm thick film, while a clear change of the magnetic anisotropy is obtained for the 1.1 nm thick one. The experimental results have been attributed to both the electric-field-induced modulation of carrier density near the interface and the oxidation-reduction effect inside the magnetic films.

  17. Magnetic Nanoparticle Arrays Self-Assembled on Perpendicular Magnetic Recording Media.

    PubMed

    Mohtasebzadeh, Abdul Rahman; Ye, Longfei; Crawford, Thomas M

    2015-08-20

    We study magnetic-field directed self-assembly of magnetic nanoparticles onto templates recorded on perpendicular magnetic recording media, and quantify feature width and height as a function of assembly time. Feature widths are determined from Scanning Electron Microscope (SEM) images, while heights are obtained with Atomic Force Microscopy (AFM). For short assembly times, widths were ~150 nm, while heights were ~14 nm, a single nanoparticle on average with a 10:1 aspect ratio. For long assembly times, widths approach 550 nm, while the average height grows to 3 nanoparticles, ~35 nm; a 16:1 aspect ratio. We perform magnetometry on these self-assembled structures and observe the slope of the magnetic moment vs. field curve increases with time. This increase suggests magnetic nanoparticle interactions evolve from nanoparticle-nanoparticle interactions to cluster-cluster interactions as opposed to feature-feature interactions. We suggest the aspect ratio increase occurs because the magnetic field gradients are strongest near the transitions between recorded regions in perpendicular media. If these gradients can be optimized for assembly, strong potential exists for using perpendicular recording templates to assemble complex heterogeneous materials.

  18. Magnetic Nanoparticle Arrays Self-Assembled on Perpendicular Magnetic Recording Media

    PubMed Central

    Mohtasebzadeh, Abdul Rahman; Ye, Longfei; Crawford, Thomas M.

    2015-01-01

    We study magnetic-field directed self-assembly of magnetic nanoparticles onto templates recorded on perpendicular magnetic recording media, and quantify feature width and height as a function of assembly time. Feature widths are determined from Scanning Electron Microscope (SEM) images, while heights are obtained with Atomic Force Microscopy (AFM). For short assembly times, widths were ~150 nm, while heights were ~14 nm, a single nanoparticle on average with a 10:1 aspect ratio. For long assembly times, widths approach 550 nm, while the average height grows to 3 nanoparticles, ~35 nm; a 16:1 aspect ratio. We perform magnetometry on these self-assembled structures and observe the slope of the magnetic moment vs. field curve increases with time. This increase suggests magnetic nanoparticle interactions evolve from nanoparticle–nanoparticle interactions to cluster–cluster interactions as opposed to feature–feature interactions. We suggest the aspect ratio increase occurs because the magnetic field gradients are strongest near the transitions between recorded regions in perpendicular media. If these gradients can be optimized for assembly, strong potential exists for using perpendicular recording templates to assemble complex heterogeneous materials. PMID:26307967

  19. Phase diagram and optimal switching induced by spin Hall effect in a perpendicular magnetic layer

    NASA Astrophysics Data System (ADS)

    Yan, Shu; Bazaliy, Ya. B.

    2015-06-01

    In a ferromagnet/heavy-metal bilayer device with strong spin Hall effect an in-plane current excites magnetic dynamics through spin torque. We analyze bilayers with perpendicular magnetization and calculate three-dimensional phase diagrams describing switching by external magnetic field at a fixed current. We then concentrate on the case of a field applied in the plane formed by the film normal and the current direction. Here we analytically study the evolution of both the conventional "up"/"down" magnetic equilibria and the additional equilibria created by the spin torque. Expressions for the stability regions of all equilibria are derived, and the nature of switching at each critical boundary is discussed. The qualitative picture obtained this way predicts complex hysteresis patterns that should occur in bilayers. Analyzing the phase portraits of the system we find regimes where switching between the up and down states proceeds through the current-induced state as an intermediate. The first step of such two-step process is fast and resembles ballistic switching for the reasons discussed in the paper. Using numeric simulations we analyze the switching time and compare it to that of a conventional spin torque device with collinear magnetizations of the polarizer and the free layer.

  20. Ion heating perpendicular to the magnetic field. Technical report

    SciTech Connect

    Andre, M.; Chang, T.

    1994-03-28

    Several theories of ion heating perpendicular to the geomagnetic field are briefly reviewed and assessed. Perpendicular heating of ions leading to the formation of ion conics is common in the ionosphere and magnetosphere. Ion conics at altitudes above a few thousand kilometers are often associated with waves around the ion gyrofrequency. It is concluded that the majority of these ion conics that are locally heated or generated over extended altitude regimes, may be best explained by ion cyclotron resonance heating. At lower altitudes, particularly in the region of discrete auroras, energization by turbulence around the lower hybrid frequency seems to be an important heating mechanism.

  1. Methods for characterizing magnetic footprints of perpendicular magnetic recording writer heads.

    PubMed

    Li, Shaoping; Lin, Ed; George, Zach; Terrill, Dave; Mendez, H; Santucci, J; Yie, Derek

    2014-05-01

    In this work, the magnetic footprints, along with some of its dynamic features in recording process, of perpendicular magnetic recording writer heads have been characterized by using three different techniques. Those techniques are the spin-stand stationary footprint technique, the spin-stand dynamic footprint technique, and the coherent writing technique combined with magnetic force microscope imaging method. The characteristics of those techniques have been compared to one another. It was found experimentally that the spin-stand stationary method could not precisely catch some peculiar recording dynamics of the write heads in certain conditions. The advantages and disadvantages among all those techniques are also examined and discussed in detail.

  2. Methods for characterizing magnetic footprints of perpendicular magnetic recording writer heads

    SciTech Connect

    Li, Shaoping Lin, Ed; George, Zach; Terrill, Dave; Mendez, H.; Santucci, J.; Yie, Derek

    2014-05-07

    In this work, the magnetic footprints, along with some of its dynamic features in recording process, of perpendicular magnetic recording writer heads have been characterized by using three different techniques. Those techniques are the spin-stand stationary footprint technique, the spin-stand dynamic footprint technique, and the coherent writing technique combined with magnetic force microscope imaging method. The characteristics of those techniques have been compared to one another. It was found experimentally that the spin-stand stationary method could not precisely catch some peculiar recording dynamics of the write heads in certain conditions. The advantages and disadvantages among all those techniques are also examined and discussed in detail.

  3. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    SciTech Connect

    Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

    2015-01-19

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  4. Duffing oscillation-induced reversal of magnetic vortex core by a resonant perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Moon, Kyoung-Woong; Chun, Byong Sun; Kim, Wondong; Qiu, Z. Q.; Hwang, Chanyong

    2014-08-01

    Nonlinear dynamics of the magnetic vortex state in a circular nanodisk was studied under a perpendicular alternating magnetic field that excites the radial modes of the magnetic resonance. Here, we show that as the oscillating frequency is swept down from a frequency higher than the eigenfrequency, the amplitude of the radial mode is almost doubled to the amplitude at the fixed resonance frequency. This amplitude has a hysteresis vs. frequency sweeping direction. Our result showed that this phenomenon was due to a Duffing-type nonlinear resonance. Consequently, the amplitude enhancement reduced the vortex core-switching magnetic field to well below 10 mT. A theoretical model corresponding to the Duffing oscillator was developed from the Landau-Lifshitz-Gilbert equation to explore the physical origin of the simulation result. This work provides a new pathway for the switching of the magnetic vortex core polarity in future magnetic storage devices.

  5. Duffing oscillation-induced reversal of magnetic vortex core by a resonant perpendicular magnetic field

    PubMed Central

    Moon, Kyoung-Woong; Chun, Byong Sun; Kim, Wondong; Qiu, Z. Q.; Hwang, Chanyong

    2014-01-01

    Nonlinear dynamics of the magnetic vortex state in a circular nanodisk was studied under a perpendicular alternating magnetic field that excites the radial modes of the magnetic resonance. Here, we show that as the oscillating frequency is swept down from a frequency higher than the eigenfrequency, the amplitude of the radial mode is almost doubled to the amplitude at the fixed resonance frequency. This amplitude has a hysteresis vs. frequency sweeping direction. Our result showed that this phenomenon was due to a Duffing-type nonlinear resonance. Consequently, the amplitude enhancement reduced the vortex core-switching magnetic field to well below 10 mT. A theoretical model corresponding to the Duffing oscillator was developed from the Landau–Lifshitz–Gilbert equation to explore the physical origin of the simulation result. This work provides a new pathway for the switching of the magnetic vortex core polarity in future magnetic storage devices. PMID:25145837

  6. Duffing oscillation-induced reversal of magnetic vortex core by a resonant perpendicular magnetic field.

    PubMed

    Moon, Kyoung-Woong; Chun, Byong Sun; Kim, Wondong; Qiu, Z Q; Hwang, Chanyong

    2014-01-01

    Nonlinear dynamics of the magnetic vortex state in a circular nanodisk was studied under a perpendicular alternating magnetic field that excites the radial modes of the magnetic resonance. Here, we show that as the oscillating frequency is swept down from a frequency higher than the eigenfrequency, the amplitude of the radial mode is almost doubled to the amplitude at the fixed resonance frequency. This amplitude has a hysteresis vs. frequency sweeping direction. Our result showed that this phenomenon was due to a Duffing-type nonlinear resonance. Consequently, the amplitude enhancement reduced the vortex core-switching magnetic field to well below 10 mT. A theoretical model corresponding to the Duffing oscillator was developed from the Landau-Lifshitz-Gilbert equation to explore the physical origin of the simulation result. This work provides a new pathway for the switching of the magnetic vortex core polarity in future magnetic storage devices. PMID:25145837

  7. Duffing oscillation-induced reversal of magnetic vortex core by a resonant perpendicular magnetic field.

    PubMed

    Moon, Kyoung-Woong; Chun, Byong Sun; Kim, Wondong; Qiu, Z Q; Hwang, Chanyong

    2014-01-01

    Nonlinear dynamics of the magnetic vortex state in a circular nanodisk was studied under a perpendicular alternating magnetic field that excites the radial modes of the magnetic resonance. Here, we show that as the oscillating frequency is swept down from a frequency higher than the eigenfrequency, the amplitude of the radial mode is almost doubled to the amplitude at the fixed resonance frequency. This amplitude has a hysteresis vs. frequency sweeping direction. Our result showed that this phenomenon was due to a Duffing-type nonlinear resonance. Consequently, the amplitude enhancement reduced the vortex core-switching magnetic field to well below 10 mT. A theoretical model corresponding to the Duffing oscillator was developed from the Landau-Lifshitz-Gilbert equation to explore the physical origin of the simulation result. This work provides a new pathway for the switching of the magnetic vortex core polarity in future magnetic storage devices.

  8. Thermal effects on the magnetization reversal process and its interpretation in perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Srinivasan, Kumar; Acharya, B. Ramamurthy; Bertero, Gerardo

    2010-06-01

    We have studied the time-scale and temperature dependence of the magnetization reversal in perpendicular magnetic recording media. One of the under-reported phenomena associated with this reversal is the thermal dependence of the squareness of the magnetic hysteresis loop. Understanding this phenomenon is important because the coercive squareness parameter S∗ is often used to evaluate the strength of the magnetic exchange-coupling interactions between the grains. In this work, we demonstrate that S∗ is a dynamic quantity which depends on the thermal agitation of the magnetization, and it is imperative to take this dependence into account in interpreting magnetic and microstructural effects. Based on the Sharrock model for the dynamic coercivity, we built an expression for the time-scale and temperature dependence of S∗ in highly oriented perpendicular magnetic recording media. Fits of experimental data to the resulting expression were then used to extract the intrinsic squareness parameter Sint∗ which originates in the thermal-independent demagnetization and exchange-interaction effects. Sint∗ was estimated for two sets of perpendicular recording media samples. For the first set of media samples showing progressively smaller grain sizes, the values of S∗ measured at the normal magnetometry time-scales of milliseconds to seconds indicated progressively smaller values. In contrast, the values of the thermal-independent S∗ determined from applying the above model were progressively larger. This discrepancy can only be explained on the basis of progressively stronger intergranular exchange coupling, which is offset by strong thermal effects at small grain sizes. For the second set of media samples with increasingly larger segregant oxide content, progressively smaller values of both S∗ and thermal-independent Sint∗ were observed, thus verifying the strong intergranular segregation effects due to greater nonmagnetic grain boundary phase. The

  9. Constructive inter-track interference (CITI) codes for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Ahmed, Mohammed Zaki; Davey, Paul J.; Kurihara, Yoshitake

    2005-02-01

    This paper presents new modulation codes to reduce the effect of adjacent track interference (ATI) also known as inter-track interference (ITI). New modulation codes, that is constructive inter-track interference (CITI) codes and partial response (PR) targets, are investigated using computer simulation in perpendicular magnetic channel. CITI codes have been found to increase the resilience of the perpendicular magnetic channel in the presence of ITI and jitter with no increased decoding complexity.

  10. Tunable exchange bias-like effect in patterned hard-soft two-dimensional lateral composites with perpendicular magnetic anisotropy

    SciTech Connect

    Hierro-Rodriguez, A. Alvarez-Prado, L. M.; Martín, J. I.; Alameda, J. M.; Teixeira, J. M.; Vélez, M.

    2014-09-08

    Patterned hard-soft 2D magnetic lateral composites have been fabricated by e-beam lithography plus dry etching techniques on sputter-deposited NdCo{sub 5} thin films with perpendicular magnetic anisotropy. Their magnetic behavior is strongly thickness dependent due to the interplay between out-of-plane anisotropy and magnetostatic energy. Thus, the spatial modulation of thicknesses leads to an exchange coupled system with hard/soft magnetic regions in which rotatable anisotropy of the thicker elements provides an extra tool to design the global magnetic behavior of the patterned lateral composite. Kerr microscopy studies (domain imaging and magneto-optical Kerr effect magnetometry) reveal that the resulting hysteresis loops exhibit a tunable exchange bias-like shift that can be switched on/off by the applied magnetic field.

  11. Perpendicular magnetic anisotropy in granular multilayers of CoPd alloyed nanoparticles

    NASA Astrophysics Data System (ADS)

    Vivas, L. G.; Rubín, J.; Figueroa, A. I.; Bartolomé, F.; García, L. M.; Deranlot, C.; Petroff, F.; Ruiz, L.; González-Calbet, J. M.; Pascarelli, S.; Brookes, N. B.; Wilhelm, F.; Chorro, M.; Rogalev, A.; Bartolomé, J.

    2016-05-01

    Co-Pd multilayers obtained by Pd capping of pre-deposited Co nanoparticles on amorphous alumina are systematically studied by means of high-resolution transmission electron microscopy, x-ray diffraction, extended x-ray absorption fine structure, SQUID-based magnetometry, and x-ray magnetic circular dichroism. The films are formed by CoPd alloyed nanoparticles self-organized across the layers, with the interspace between the nanoparticles filled by the non-alloyed Pd metal. The nanoparticles show atomic arrangements compatible with short-range chemical order of L 10 strucure type. The collective magnetic behavior is that of ferromagnetically coupled particles with perpendicular magnetic anisotropy, irrespective of the amount of deposited Pd. For increasing temperature three magnetic phases are identified: hard ferromagnetic with strong coercive field, soft-ferromagnetic as in an amorphous asperomagnet, and superparamagnetic. Increasing the amount of Pd in the system leads to both magnetic hardness increment and higher transition temperatures. Magnetic total moments of 1.77(4) μB and 0.45(4) μB are found at Co and Pd sites, respectively, where the orbital moment of Co, 0.40(2) μB, is high, while that of Pd is negligible. The effective magnetic anisotropy is the largest in the capping metal series (Pd, Pt, W, Cu, Ag, Au), which is attributed to the interparticle interaction between de nanoparticles, in addition to the intraparticle anisotropy arising from hybridization between the 3 d -4 d bands associated to the Co and Pd chemical arrangement in a L 10 structure type.

  12. Skyrmion core size dependence as a function of the perpendicular anisotropy and radius in magnetic nanodots

    NASA Astrophysics Data System (ADS)

    Castro, M. A.; Allende, S.

    2016-11-01

    A detailed analytical and numerical analysis of the skyrmion core size dependence as a function of the uniaxial perpendicular anisotropy and radius in magnetic nanodots has been carried out. Results from micromagnetic calculations show a non-monotonic behavior between the skyrmion core size and the uniaxial perpendicular anisotropy. The increment of the radius reduces the skyrmion core size at constant uniaxial perpendicular anisotropy. Thus, these results can be used for the control of the core sizes in magnetic artificial skyrmion crystals or spintronic devices that need to use a skyrmion configuration at room temperature.

  13. Magnetic anisotropies in ultrathin bismuth iron garnet films

    NASA Astrophysics Data System (ADS)

    Popova, Elena; Franco Galeano, Andres Felipe; Deb, Marwan; Warot-Fonrose, Bénédicte; Kachkachi, Hamid; Gendron, François; Ott, Frédéric; Berini, Bruno; Keller, Niels

    2013-06-01

    Ultrathin bismuth iron garnet Bi3Fe5O12 films were grown epitaxially on (001)-oriented gadolinium gallium garnet substrates. Film thickness varied from two to three dozens of unit cells. Bi3Fe5O12 films grow pseudomorphically on substrates up to a thickness of 20 nm, and then a lattice relaxation occurs. Magnetic properties of the films were studied as a function of bismuth iron garnet thickness. The magnetization and cubic anisotropy decrease with decreasing film thickness. The uniaxial magnetocrystalline anisotropy is constant for all film thicknesses. For two unit cell thick films, the easy magnetization axis changes from in-plane to perpendicular to the plane direction. Such a reorientation takes place as a result of the competition of constant uniaxial perpendicular anisotropy with weakening film magnetization.

  14. Magnetic interactions in CoCrPt-oxide based perpendicular magnetic recording media

    SciTech Connect

    Tan, H. K.; Varghese, B.; Piramanayagam, S. N.

    2014-10-28

    First order reversal curves (FORC) method has been reported to be an efficient tool to study interaction between grains and layers of magnetic materials. Although a few studies have been carried out on perpendicular recording media in the past, a study on the effect of systematic variation of exchange interaction in granular perpendicular magnetic recording media on FORC contours has not been carried out in detail. Such a study will help to understand the use of FORC better. In this paper, we have made a systematic set of samples in order to study the variation in exchange coupling and its effect on FORC contours. The pressure during the deposition of the second ruthenium layer and the magnetic layer was varied to alter the separation between the grains and hence the exchange interaction between the grains in the CoCrPt-oxide recording layer. In addition, the thickness of Co-alloy cap layer was used as an additional tool to control the exchange interaction between the magnetic grains. The results indicated that the interaction field obtained from the FORC does not vary in a significant manner when the changes in exchange interaction are small. In comparison, the peak intensity of the FORC shows a clear trend as the exchange coupling is varied, making it a more suitable parameter to study the exchange and magnetostatic interactions in systems such as magnetic recording media.

  15. Giant perpendicular magnetic anisotropy of an individual atom on two-dimensional transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Odkhuu, Dorj

    2016-08-01

    Exploring magnetism and magnetic anisotropy in otherwise nonmagnetic two-dimensional materials, such as graphene and transition metal dichalcogenides, is at the heart of spintronics research. Herein, using first-principles calculations we explore the possibility of reaching an atomic-scale perpendicular magnetic anisotropy by carefully exploring the large spin-orbit coupling, orbital magnetism, and ligand field in a suitable choice of a two-dimensional structure with transition metal adatoms. More specifically, we demonstrate perpendicular magnetic anisotropy energies up to an order of 100 meV per atom in individual ruthenium and osmium adatoms at a monosulfur vacancy in molybdenum disulfide. We further propose a phenomenological model where a spin state transition that involves hybridization between molybdenum a1 and adatomic e' orbitals is a possible mechanism for magnetization reversal from an in-plane to perpendicular orientation.

  16. Effect of sputtering pressure on stacking fault density and perpendicular magnetic anisotropy of CoPt alloys

    NASA Astrophysics Data System (ADS)

    Park, Kyung-Woong; Oh, Young-Wan; Kim, Dae-Hoon; Kim, Jai-Young; Park, Byong-Guk

    2016-09-01

    We report the effects of Ar sputtering pressure on perpendicular magnetic anisotropy in disordered CoPt alloys via the modulation of stacking fault density. The coercivity and anisotropy field of CoPt alloys are gradually enlarged with an increase in Ar sputtering pressure from 3 mTorr to 30 mTorr. Structural analyses using transmission electron microscopy, atomic force microscopy and x-ray reflectivity show that the structural properties of the samples, such as roughness or grain size, are not significantly changed by variations in Ar sputtering pressure. On the other hand, in-plane x-ray diffraction measurements reveal that the stacking fault density is reduced in films grown under higher pressure, and instead favors HCP stacking. Our results suggest that perpendicular magnetic anisotropy in CoPt alloys can be enhanced by the growth of the sample under a high Ar sputtering pressure, which decreases stacking fault density.

  17. Thickness Dependent Magnetoelastic Effects and Perpendicular Magnetic Anisotropy in the Ta/CoFeB/MgO system

    NASA Astrophysics Data System (ADS)

    Stiehl, Gregory; Gowtham, Praveen; Ralph, Daniel; Buhrman, Robert

    2015-03-01

    We report the observation of strong thickness-dependent in-plane magnetoelastic coupling in Ta/CoFeB(x =0.7-2 nm)/MgO multilayers. Measurements are made using a four-point bend test strain fixture, revealing the emergence of large effective surface and volume magnetoelastic couplings after post-deposition annealing. When such surface and volume magnetoelastic interactions are included in the standard Neel model of surface anisotropy, they provide a natural explanation for the nonmonotonic Keffteff vs teff curves measured for CoFeB films in the thickness range that yields perpendicular magnetic anisotropy (PMA). The large magnitude of the magnetoelastic coupling terms suggest that enhanced control of thin film strains could be used to beneficially manipulate the PMA in CoFeB/MgO magnetic tunnel junctions and other thin film multilayer nanostructures.

  18. Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Dieny, Bernard

    2014-08-04

    The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

  19. Non-Uniform Switching of the Perpendicular Magnetization in a Spin-Torque Magnetic Nanopillar

    SciTech Connect

    Bernstein, David

    2011-06-01

    Time-resolved scanning transmission x-ray microscopy (STXM) measurements were performed to study the current-induced magnetization switching mechanism in nanopillars exhibiting strong perpendicular magnetic anisotropy (PMA). This technique provides both short time (70 ps) and high spatial (25 nm) resolution. Direct imaging of the magnetization demonstrates that, after an incubation time of {approx} 1.3 ns, a 100 x 300 nm{sup 2} ellipsoidal device switches in {approx} 1 ns via a central domain nucleation and opposite propagation of two domain walls towards the edges. High domain wall velocities on the order of 100m/s are measured. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight into magnetization dynamics during the incubation and reversal period.

  20. Enhancement of perpendicular magnetic anisotropy thanks to Pt insertions in synthetic antiferromagnets

    NASA Astrophysics Data System (ADS)

    Bandiera, S.; Sousa, R. C.; Auffret, S.; Rodmacq, B.; Dieny, B.

    2012-08-01

    Synthetic antiferromagnets are of great interest as reference layers in magnetic tunnel junctions since they allow decreasing the dipolar coupling between the two magnetic electrodes and exhibit larger pinning fields than single reference layers. In this letter, we investigate the effect of the insertion of an ultrathin Pt layer in contact with the Ru spacer in synthetic antiferromagnets with perpendicular magnetic anisotropy. Surprisingly, for Ru thickness below 0.75 nm, the antiferromagnetic coupling amplitude through Ru first increases upon Pt insertion up to a critical Pt thickness (˜0.25 nm) above which coupling decreases. In addition, the corresponding increase of perpendicular magnetic anisotropy enhances the thermal stability of the structure.

  1. Strong perpendicular exchange bias in epitaxial La0.7Sr0.3MnO3:LaFeO3 nanocomposite thin films

    NASA Astrophysics Data System (ADS)

    Fan, Meng; Zhang, Wenrui; Jian, Jie; Huang, Jijie; Wang, Haiyan

    2016-07-01

    Strong exchange bias (EB) in perpendicular direction has been demonstrated in vertically aligned nanocomposite (VAN) (La0.7Sr0.3MnO3)1-x : (LaFeO3)x (LSMO:LFO, x = 0.33, 0.5, 0.67) thin films deposited by pulsed laser deposition. Under a moderate magnetic field cooling, an EB field as high as ˜800 Oe is achieved in the VAN film with x = 0.33, suggesting a great potential for its applications in high density memory devices. Such enhanced EB effects in perpendicular direction can be attributed to the high quality epitaxial co-growth of vertically aligned ferromagnetic LSMO and antiferromagnetic LFO phases, and the vertical interface coupling associated with a disordered spin-glass state. The VAN design paves a powerful way for integrating perpendicular EB effect within thin films and provides a new dimension for advanced spintronic devices.

  2. Experimental and numerical studies on plasma behavior flowing across perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Takezaki, T.; Takahashi, K.; Sasaki, T.; Kikuchi, T.; Harada, N.

    2016-05-01

    To understand particle acceleration mechanisms in a collisionless shock, we have investigated the behaviors of a one-dimensional fast plasma flow in a perpendicular magnetic field by experimental and numerical simulations in a laboratory scale experiment. The velocity of the plasma flow generated by a taper-cone-shaped plasma focus device has varied by the gradient of the perpendicular magnetic field. The plasma flow has accelerated by applying the magnetic field with the negative gradient. To clarify the behavior of the plasma flow in the perpendicular magnetic field, numerical simulations based on an electromagnetic hybrid particle-in-cell (PIC) method have been carried out. These results indicate that the magnetic field gradient affects the plasma flow velocity.

  3. Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization.

    PubMed

    Chiba, D; Kawaguchi, M; Fukami, S; Ishiwata, N; Shimamura, K; Kobayashi, K; Ono, T

    2012-06-06

    Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.

  4. Argon ions injected parallel and perpendicular to the magnetic field

    NASA Technical Reports Server (NTRS)

    Erlandson, R. E.; Cahill, L. J., Jr.; Pollock, C.; Arnoldy, R. L.; Labelle, J.; Kintner, P. M.; Moore, T. E.

    1986-01-01

    Preliminary results are reported of measurements obtained with the 0-10-kHz electric-field plasma-wave receivers and single-particle ion detectors of the ARCS-3 sounding-rocket payload over the auroral oval on February 10, 1985, after downward/field-parallel or transverse-spiral injection of Ar ions from the accelerator subpayload (separating itself at 2.3 m/s). The data are presented graphically and briefly characterized. The waves induced by the parallel injections are found to be much weaker than those induced by the perpendicular injections. In addition to the expected response to the Ar beam, an ion flux at pitch angle 90 deg was detected during the second parallel injection.

  5. Accelerated ions from pulsed-power-driven fast plasma flow in perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Takezaki, Taichi; Takahashi, Kazumasa; Sasaki, Toru; Kikuchi, Takashi; Harada, Nob.

    2016-06-01

    To understand the interaction between fast plasma flow and perpendicular magnetic field, we have investigated the behavior of a one-dimensional fast plasma flow in a perpendicular magnetic field by a laboratory-scale experiment using a pulsed-power discharge. The velocity of the plasma flow generated by a tapered cone plasma focus device is about 30 km/s, and the magnetic Reynolds number is estimated to be 8.8. After flow through the perpendicular magnetic field, the accelerated ions are measured by an ion collector. To clarify the behavior of the accelerated ions and the electromagnetic fields, numerical simulations based on an electromagnetic hybrid particle-in-cell method have been carried out. The results show that the behavior of the accelerated ions corresponds qualitatively to the experimental results. Faster ions in the plasma flow are accelerated by the induced electromagnetic fields modulated with the plasma flow.

  6. Clusters of interacting single domain Co nanomagnets for multistate perpendicular magnetic media applications

    NASA Astrophysics Data System (ADS)

    Xiao, Qijun; Yang, Tianyu; Ursache, Andrei; Tuominen, Mark T.

    2008-04-01

    In this work we develop prototype elements for multistate (beyond binary) perpendicular data storage using interacting nanomagnet clusters. This experimental work confirms earlier theoretical work that predicted multiple discrete values of stable remanent magnetization for such clusters. The fabrication scheme is based on ultrahigh resolution electron beam lithography performed on a thin suspended silicon nitride membrane to reduce the secondary backscattered electrons from the substrate. A Co nanomagnet cluster array is deposited into the nanotemplate via pulse-reverse electrodeposition to create nanomagnets with the favored uniaxial perpendicular anisotropy. Magnetic force microscopy (MFM) measurements show the perpendicular magnetization of individual Co nanomagnets and the combined multiconfiguration behavior of a nanomagnet cluster. In concept, the discrete values of net remanent magnetization of the cluster, which represent distinct information states, can be "programmed" by a uniform applied field.

  7. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films

    SciTech Connect

    Toyoki, Kentaro; Shiratsuchi, Yu Kobane, Atsushi; Nakatani, Ryoichi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  8. Perpendicular magnetic anisotropy in Fe2Cr1 - xCoxSi Heusler alloy

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Qiu, Jin-Jun; Lu, Hui; Ji, Rong; Han, Gu-Chang; Teo, Kie-Leong

    2014-12-01

    Perpendicular magnetic anisotropy (PMA) was achieved in annealed Fe2Cr1 - xCoxSi (FCCS) Heusler alloys with different Co compositions x. The Co composition is varied to tune the Fermi level in order to achieve both higher spin polarization and better thermal stability. The PMA is thermally stable up to 400 oC for FCCS with x = 0, 0.3, 0.5 and 350 oC for FCCS with x = 0.7, 0.9, 1. The thickness of FCCS films with PMA ranges from 0.6 to 1.2 nm. The annealing temperature and FCCS thickness are found to greatly affect the PMA. The magnetic anisotropy energy density KU is 2.8  ×  106 erg cm-3 for 0.8 nm Fe2CrSi, and decreases as the Co composition x increases, suggesting that the PMA induced at the FCCS/MgO interface is dominated by the contribution of Fe atoms. There is a trade-off between high spin polarization and strong PMA by adjusting the Co composition.

  9. Three-wave coupling coefficients for perpendicular wave propagation in a magnetized plasma

    SciTech Connect

    Brodin, G.; Stenflo, L.

    2015-10-15

    The resonant interaction between three waves in a uniform magnetized plasma is reconsidered. Starting from previous kinetic expressions, we limit our investigation to waves propagating perpendicularly to the external magnetic field. It is shown that reliable results can only be obtained in the two-dimensional case, i.e., when the wave vectors have both x and y components.

  10. Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-08-01

    The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR) effect with TMR ratio of 1.3% at room temperature was observed.

  11. Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

    NASA Astrophysics Data System (ADS)

    Natarajarathinam, Anusha

    Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

  12. Experimental evidence of skyrmion-like configurations in bilayer nanodisks with perpendicular magnetic anisotropy

    SciTech Connect

    Stebliy, Maxim E. Kolesnikov, Alexander G.; Davydenko, Alexander V.; Ognev, Alexey V.; Samardak, Alexander S.; Chebotkevich, Ludmila A.

    2015-05-07

    Formation and existence of magnetic skyrmion-like configurations in bilayer nanodisks (Ta(3 nm)/[Co(0.37 nm)/Ni(0.58 nm)]{sub 10}){sub 2} with perpendicular magnetic anisotropy are shown experimentally at room temperature. Magnetization reversal through the skyrmion state is studied using magnetic hysteresis measurements. An evolution of skyrmion configurations in the nanodisk structure is analyzed. Experimental methods and micromagnetic simulations help to understand the magnetization reversal processes occurring through the stable skyrmion-like configurations. Formation of the intermediate C-states during magnetization reversal is demonstrated. The skyrmion number for all possible spin configurations is calculated.

  13. Engineering spin-orbit torque in Co/Pt multilayers with perpendicular magnetic anisotropy

    SciTech Connect

    Huang, Kuo-Feng; Wang, Ding-Shuo; Lai, Chih-Huang; Lin, Hsiu-Hau

    2015-12-07

    To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global imbalance of the spin currents from the top and bottom interfaces for each Co layer. By inserting Ta or Cu layers to strengthen the top-down asymmetry, the spin-orbit torque efficiency can be greatly modified without compromised perpendicular magnetic anisotropy. Above all, the efficiency builds up as the number of layers increases, realizing robust thermal stability and high spin-orbit-torque efficiency simultaneously in the multilayers structure.

  14. Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization

    NASA Astrophysics Data System (ADS)

    Shiota, Yoichi; Nozaki, Takayuki; Tamaru, Shingo; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige

    2016-01-01

    We investigated the write error rate (WER) for voltage-driven dynamic switching in magnetic tunnel junctions with perpendicular magnetization. We observed a clear oscillatory behavior of the switching probability with respect to the duration of pulse voltage, which reveals the precessional motion of magnetization during voltage application. We experimentally demonstrated WER as low as 4 × 10-3 at the pulse duration corresponding to a half precession period (˜1 ns). The comparison between the results of the experiment and simulation based on a macrospin model shows a possibility of ultralow WER (<10-15) under optimum conditions. This study provides a guideline for developing practical voltage-driven spintronic devices.

  15. Large energy product enhancement in perpendicularly coupled MnBi/CoFe magnetic bilayers

    NASA Astrophysics Data System (ADS)

    Gao, T. R.; Fang, L.; Fackler, S.; Maruyama, S.; Zhang, X. H.; Wang, L. L.; Rana, T.; Manchanda, P.; Kashyap, A.; Janicka, K.; Wysocki, A. L.; N'Diaye, A. T.; Arenholz, E.; Borchers, J. A.; Kirby, B. J.; Maranville, B. B.; Sun, K. W.; Kramer, M. J.; Antropov, V. P.; Johnson, D. D.; Skomski, R.; Cui, J.; Takeuchi, I.

    2016-08-01

    We demonstrate substantial enhancement in the energy product of MnBi-based magnets by forming robust ferromagnetic exchange coupling between a MnBi layer and a thin CoFe layer in a unique perpendicular coupling configuration, which provides increased resistance to magnetization reversal. The measured nominal energy product of 172 kJ /m3 at room temperature is the largest value experimentally attained for permanent magnets free of expensive raw materials. Our finding shows that exchange-coupled MnBi/CoFe magnets are a viable option for pursuing rare-earth-free magnets with energy products approaching those containing rare-earth elements.

  16. Perpendicular magnetic anisotropy and structural properties of NiCu/Cu multilayers

    NASA Astrophysics Data System (ADS)

    Ruotolo, A.; Bell, C.; Leung, C. W.; Blamire, M. G.

    2004-07-01

    Perpendicular magnetic anisotropy (PMA) was studied at low temperature (T=30 K) in dc-magnetron sputtered Ni60Cu40/Cu multilayers. PMA has been observed in many multilayer structures for ferromagnetic layer thicknesses less than a certain thickness t⊥. In general cases t⊥ is less than a few nanometers, making such structures unsuitable for low-cost fabrication techniques. Our results show a strong perpendicular easy direction of magnetization for NiCu layer thickness between 4.2 nm and 34 nm. The thickness t⊥ at which the multilayers change the preferential orientation from perpendicular to in-plane is estimated to be 55 nm. Structural studies show that the low magnetostatic energy density is likely to be the main reason for the large t⊥ value obtained in this system.

  17. Magnetic domain patterns on strong perpendicular magnetization of Co/Ni multilayers as spintronics materials: I. Dynamic observations.

    PubMed

    Suzuki, Masahiko; Kudo, Kazue; Kojima, Kazuki; Yasue, Tsuneo; Akutsu, Noriko; Diño, Wilson Agerico; Kasai, Hideaki; Bauer, Ernst; Koshikawa, Takanori

    2013-10-01

    Materials with perpendicular magnetic anisotropy can reduce the threshold current density of the current-induced domain wall motion. Co/Ni multilayers show strong perpendicular magnetic anisotropy and therefore it has become a highly potential candidate of current-induced domain wall motion memories. However, the details of the mechanism which stabilizes the strong perpendicular magnetization in Co/Ni multilayers have not yet been understood. In the present work, the evolution of the magnetic domain structure of multilayers consisting of pairs of 2 or 3 monolayers (ML) of Ni and 1 ML of Co on W(110) was investigated during growth with spin-polarized low-energy electron microscopy. An interesting phenomenon, that the magnetic domain structure changed drastically during growth, was revealed. In the early stages of the growth the magnetization alternated between in-plane upon Co deposition and out-of-plane upon Ni deposition. The change of the magnetization direction occurred within a range of less than 0.2 ML during Ni or Co deposition, with break-up of the existing domains followed by growth of new domains. The Ni and Co thickness at which the magnetization direction switched shifted gradually with the number of Co/Ni pairs. Above 3-4 Co/Ni pairs it stayed out-of-plane. The results indicate clearly that the Co-Ni interfaces play the important role of enhancing the perpendicular magnetic anisotropy.

  18. Giant magnetroresistance properties of specular spin valve films in a current perpendicular to plane structure

    SciTech Connect

    Nagasaka, K.; Seyama, Y.; Varga, L.; Shimizu, Y.; Tanaka, A.

    2001-06-01

    Conventional and specular spin valve films in a current perpendicular to plane (CPP) structure have been investigated. The specular spin valve film with bottom type structure had two oxidized layers: one in the pinned layer, which was oxidized during an in situ deposition process, and the other in the free layer, which was a naturally oxidized Cu/Ta cap. Both films had increasing resistance, R, and resistance change, {Delta}R, with decreasing element size. The conventional spin valve film showed a resistance times area product, RA, of 144 m{Omega}{mu}m2 and a resistance change area product, {Delta}RA, of 0.7 m{Omega}{mu}m2 while the specular spin valve film showed RA of 1120 m{Omega}{mu}m2 and {Delta}RA of 23 m{Omega}{mu}m2. The {Delta}RA of the specular spin valve film was about 33 times larger than that of the conventional spin valve film. The calculated magnetoresistance (MR) ratios, MR{sub SV}, of each spin valve film were 1.9% and 2.3%, respectively. We think oxidized layers in the spin valve film caused the specular electron scattering and this lengthened the path of the conduction electrons, enhancing the interfacial and bulk spin dependent scattering. We estimated the output voltage change of the 0.01 {mu}m2 element, the size required for 150 Gb/in.2 recording density, of the specular spin valve film in CPP mode to be 5.3 mV. It was almost six times larger than that of the conventional spin valve film at constant power consumption. Specular spin valve film are advantageous for the CPP structure element for future giant MR sensors. {copyright} 2001 American Institute of Physics.

  19. Ferromagnetic resonance measurements of (Co/Ni/Co/Pt) multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Sbiaa, R.; Shaw, J. M.; Nembach, H. T.; Bahri, M. Al; Ranjbar, M.; Åkerman, J.; Piramanayagam, S. N.

    2016-10-01

    Multilayers of [Co/Ni(t)/Co/Pt]×8 with varying Ni thickness were investigated for possible use as a free layer in magnetic tunnel junctions and spintronics devices. The thickness t of the Ni sub-layer was varied from 0.3 nm to 0.9 nm and the resulting magnetic properties were compared with (Co/Ni) and (Co/Pt) multilayers. As determined from magnetic force microscopy, magnetometry and ferromagnetic resonance measurements, all multilayers exhibited perpendicular magnetic anisotropy. Compared with (Co/Pt) multilayers, the sample with t of 0.9 nm showed almost the same anisotropy field of μ 0 H k   =  1.15 T but the damping constant was 40% lower. These characteristics make these multilayers attractive for spin torque based magnetoresistive devices with perpendicular anisotropy.

  20. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

    SciTech Connect

    Rushforth, A. W.; Wang, M.; Farley, N. R. S.; Campion, R. P.; Edmonds, K. W.; Staddon, C. R.; Foxon, C. T.; Gallagher, B. L.

    2008-10-01

    We present an experimental investigation of the magnetic, electrical, and structural properties of Ga{sub 0.94}Mn{sub 0.06}As{sub 1-y}P{sub y} layers grown by molecular beam epitaxy on GaAs substrates for y{<=}0.3. X-ray diffraction measurements reveal that the layers are under tensile strain, which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increases as the phosphorous concentration is increased. The resistivity of all samples shows metallic behavior with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy.

  1. TIME-DEPENDENT PERPENDICULAR TRANSPORT OF FAST CHARGED PARTICLES IN A TURBULENT MAGNETIC FIELD

    SciTech Connect

    Fraschetti, F.; Jokipii, J. R.

    2011-06-20

    We present an analytic derivation of the temporal dependence of the perpendicular transport coefficient of charged particles in magnetostatic turbulence, for times smaller than the time needed for charged particles to travel the turbulence correlation length. This time window is left unexplored in most transport models. In our analysis all magnetic scales are taken to be much larger than the particle gyroradius, so that perpendicular transport is assumed to be dominated by the guiding center motion. Particle drift from the local magnetic field lines (MFLs) and magnetic field line random walk are evaluated separately for slab and three-dimensional (3D) isotropic turbulence. Contributions of wavelength scales shorter and longer than the turbulence coherence length are compared. In contrast to the slab case, particles in 3D isotropic turbulence unexpectedly diffuse from local MFLs; this result questions the common assumption that particle magnetization is independent of turbulence geometry. Extensions of this model will allow for a study of solar wind anisotropies.

  2. Enhanced current quantization in high-frequency electron pumps in a perpendicular magnetic field

    SciTech Connect

    Wright, S. J.; Blumenthal, M. D.; Gumbs, Godfrey; Thorn, A. L.; Pepper, M.; Anderson, D.; Jones, G. A. C.; Nicoll, C. A.; Ritchie, D. A.; Janssen, T. J. B. M.; Holmes, S. N.

    2008-12-15

    We present experimental results of high-frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field.

  3. Composition-tuned magneto-optical Kerr effect in L10-Mn x Ga films with giant perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Zhu, L. J.; Brandt, L.; Zhao, J. H.; Woltersdorf, G.

    2016-06-01

    We report the large polar magnetooptical Kerr effect in L10-Mn x Ga (0.76  ⩽  x  ⩽  1.29) epitaxial films with giant perpendicular magnetic anisotropy. The Kerr rotation is enhanced by a factor of up to 2.5 by decreasing Mn atomic concentration, which most likely arises from the variation of the effective spin–orbit coupling strength, compensation effect of magnetic moments at different Mn atom sites, and overall strain. A significant tuning effect of composition is also observed on Kerr ellipticity and complex Kerr angle (including the magnitude and phase angle). The good epitaxial compatibility with semiconductors, moderate coercivity of 4.6–9.7 kOe, large Kerr rotation of up to 0.10°, high reflectivity of 35%–55% in a wide wavelength range of 400 ~ 850 nm, and giant magnetic anisotropic field of up to 140 kOe together make these L10-Mn x Ga films promising for scientific and technological applications in spintronics and terahertz-frequency magnetooptical modulators.

  4. Composition-tuned magneto-optical Kerr effect in L10-Mn x Ga films with giant perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Zhu, L. J.; Brandt, L.; Zhao, J. H.; Woltersdorf, G.

    2016-06-01

    We report the large polar magnetooptical Kerr effect in L10-Mn x Ga (0.76  ⩽  x  ⩽  1.29) epitaxial films with giant perpendicular magnetic anisotropy. The Kerr rotation is enhanced by a factor of up to 2.5 by decreasing Mn atomic concentration, which most likely arises from the variation of the effective spin-orbit coupling strength, compensation effect of magnetic moments at different Mn atom sites, and overall strain. A significant tuning effect of composition is also observed on Kerr ellipticity and complex Kerr angle (including the magnitude and phase angle). The good epitaxial compatibility with semiconductors, moderate coercivity of 4.6-9.7 kOe, large Kerr rotation of up to 0.10°, high reflectivity of 35%-55% in a wide wavelength range of 400 ~ 850 nm, and giant magnetic anisotropic field of up to 140 kOe together make these L10-Mn x Ga films promising for scientific and technological applications in spintronics and terahertz-frequency magnetooptical modulators.

  5. Thin film magnetism

    SciTech Connect

    Bader, S.D. )

    1990-06-01

    New developments in thin-film magnetism are reviewed with an emphasis on the ultrathin regime. The scope includes relatively simple metallic systems in overlayer, sandwich, and superlattice configurations. Sample fabrication, characterization, and magnetic measurement techniques are outlined by highlighting some of the more modern experimental innovations. Current issues and advances that demonstrate the symbiotic relationship between experiment and theory are then examined, including the surface magnetic anisotropy, the two-dimensional critical behavior, the creation of metastable phases via epitaxy, and phenomena associated with coupled magnetic layers. The review ends with a brief account of the impact of the various contemporary developments on the applications area.

  6. Influence of thermal agitation on the electric field induced precessional magnetization reversal with perpendicular easy axis

    SciTech Connect

    Cheng, Hongguang Deng, Ning

    2013-12-15

    We investigated the influence of thermal agitation on the electric field induced precessional magnetization switching probability with perpendicular easy axis by solving the Fokker-Planck equation numerically with finite difference method. The calculated results show that the thermal agitation during the reversal process crucially influences the switching probability. The switching probability can be achieved is only determined by the thermal stability factor Δ of the free layer, it is independent on the device dimension, which is important for the high density device application. Ultra-low error rate down to the order of 10{sup −9} can be achieved for the device of thermal stability factor Δ of 40. Low damping factor α material should be used for the free layer for high reliability device applications. These results exhibit potential of electric field induced precessional magnetization switching with perpendicular easy axis for ultra-low power, high speed and high density magnetic random access memory (MRAM) applications.

  7. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    SciTech Connect

    Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  8. Magnetic domain patterns on strong perpendicular magnetization of Co/Ni multilayers as spintronics materials: II. Numerical simulations.

    PubMed

    Kudo, Kazue; Suzuki, Masahiko; Kojima, Kazuki; Yasue, Tsuneo; Akutsu, Noriko; Diño, Wilson Agerico; Kasai, Hideaki; Bauer, Ernst; Koshikawa, Takanori

    2013-10-01

    Magnetic domains in ultrathin films form domain patterns, which strongly depend on the magnetic anisotropy. The magnetic anisotropy in Co/Ni multilayers changes with the number of layers. We provide a model to simulate the experimentally observed domain patterns. The model assumes a layer-dependent magnetic anisotropy. With the anisotropy parameter estimated from experimental data, we reproduce the magnetic domain patterns.

  9. A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance.

    PubMed

    Wen, Zhenchao; Sukegawa, Hiroaki; Furubayashi, Takao; Koo, Jungwoo; Inomata, Koichiro; Mitani, Seiji; Hadorn, Jason Paul; Ohkubo, Tadakatsu; Hono, Kazuhiro

    2014-10-01

    A 4-fold-symmetry hexagonal Ru emerging in epitaxial MgO/Ru/Co2 FeAl/MgO heterostructures is reported, in which an approximately Ru(022¯3) growth attributes to the lattice matching between MgO, Ru, and Co2 FeAl. Perpendicular magnetic anisotropy of the Co2 FeAl/MgO interface is substantially enhanced. The magnetic tunnel junctions (MTJs) incorporating this structure give rise to the largest tunnel magnetoresistance for perpendicular MTJs using low damping Heusler alloys.

  10. Manipulation of superparamagnetic beads on patterned Au/Co/Au multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Jarosz, A.; Holzinger, D.; Urbaniak, M.; Ehresmann, A.; Stobiecki, F.

    2016-08-01

    The magnetophoresis of water-suspended 4 μm-diameter superparamagnetic beads above topographically patterned, sputter deposited Ti(4 nm)/Au(60 nm)/[Co(0.7 nm)/Au(1 nm)] × 3 multilayers with perpendicular magnetic anisotropy was investigated. The results impressively demonstrate that the magnetic stray field landscape above the stripe structure when superimposed with an external, slowly rotating, field enables the directed transport of magnetic beads across the stripe panel with velocities up to 12 μm s-1.

  11. Strong perpendicular exchange bias in epitaxial La(0.7)Sr(0.3)MnO3:BiFeO3 nanocomposite films through vertical interfacial coupling.

    PubMed

    Zhang, Wenrui; Chen, Aiping; Jian, Jie; Zhu, Yuanyuan; Chen, Li; Lu, Ping; Jia, Quanxi; MacManus-Driscoll, Judith L; Zhang, Xinghang; Wang, Haiyan

    2015-09-01

    An exchange bias effect with perpendicular anisotropy is of great interest owing to potential applications such as read heads in magnetic storage devices with high thermal stability and reduced dimensions. Here we report a novel approach for achieving perpendicular exchange bias by orienting the ferromagnetic/antiferromagnetic coupling in the vertical geometry through a unique vertically aligned nanocomposite (VAN) design. Our results demonstrate robust perpendicular exchange bias phenomena in micrometer-thick films employing a prototype material system of antiferromagnetic BiFeO3 and ferromagnetic La0.7Sr0.3MnO3. The unique response of exchange bias to a perpendicular magnetic field reveals the existence of exchange coupling along their vertical heterointerfaces, which exhibits a strong dependence on their strain states. This VAN approach enables a large selection of material systems for achieving perpendicular exchange bias, which could lead to advanced spintronic devices.

  12. Ultra Low Energy Switching of Ferromagnet with Perpendicular Anisotropy on Topological Insulator by Voltage Controlled Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Ghosh, Bahniman; Pramanik, Tanmoy; Dey, Rik; Roy, Urmimala; Register, Leonard; Banerjee, Sanjay

    2015-03-01

    We propose and demonstrate, through simulation, an ultra low energy memory device on a topological insulator thin film. The device consists of a thin layer of Fe deposited on the surface of a topological insulator, Bi2Se3. The top surface of Fe is covered with MgO so that the ferromagnetic layer has perpendicular anisotropy. Current is passed on the surface of the topological insulator which switches the magnetization of the Fe ferromagnet through strong exchange interaction, between electrons contributing to the surface current on the Bi2Se3 and the d electrons in the ferromagnet, and spin transfer torque due to shunting of current through the ferromagnet. Voltage controlled magnetic anisotropy enables ultra low energy switching. Our micromagnetic simulations, predict switching time of the order of 2.4 ns and switching energy of the order of 0.16 fJ for a ferromagnetic bit with thermal stability of 90 kBT. The proposed structure combines the advantages of both large spin torque from topological insulators and those of perpendicular anisotropy materials. This work is supported by NRI SWAN and NSF NASCENT Center.

  13. Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

    SciTech Connect

    Gan, Huadong Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming

    2014-11-10

    Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

  14. Characterization of rf-SSET in both in-plane and perpendicular magnetic fields

    NASA Astrophysics Data System (ADS)

    Tang, Chunyang; Yang, Zhen; Yuan, Mingyun; Rimberg, A. J.; Savage, D. E.; Eriksson, M. A.; Rimberg Team; Eriksson Collaboration

    2013-03-01

    Previous success in coupling an aluminum radio-frequency superconducting single electron transistor (rf-SSET) to quantum dots (QDs) has demonstrated use of the rf-SSET as an ultra-sensitive and fast charge sensor. Since a magnetic field is usually necessary for quantum dot qubit manipulation, it is important to understand the effect of magnetic fields, either in-plane or perpendicular, on the performance of any charge sensor near the QDs. Here we report characterization of rf-SSETs in both in-plane and perpendicular magnetic fields. The rf-SSET works well in an in-plane fields up to 1 Tesla at a temperature of 30 mK. At 0.3K, in a perpendicular field generated by a stripline located 700 nm away, the rf-SSET charge sensitivity even shows improvement for up to 2.1 mA current through the stripline (corresponding roughly to a field of 6 Gauss). This work was supported by NSA, LPS and ARO

  15. Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies

    NASA Astrophysics Data System (ADS)

    Fallarino, Lorenzo; Sluka, Volker; Kardasz, Bartek; Pinarbasi, Mustafa; Berger, Andreas; Kent, Andrew D.

    2016-08-01

    Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies separated by a non-magnetic spacer is studied using ferromagnetic resonance. The samples consist of a Co/Ni multilayer with perpendicular magnetic anisotropy and a CoFeB layer with easy-plane anisotropy separated by a variable thickness Ru layer. At a fixed frequency, we show that there is an avoided crossing of layer ferromagnetic resonance modes providing direct evidence for interlayer coupling. The mode dispersions for different Ru thicknesses are fit to a Heisenberg-type model to determine the interlayer exchange coupling strength and layer properties. The resulting interlayer exchange coupling varies continuously from antiferromagnetic to ferromagnetic as a function of the Ru interlayer thickness. These results show that the magnetic layer single domain ground state consists of magnetizations that can be significantly canted with respect to the layer planes and the canting can be tuned by varying the Ru thickness and the layer magnetic characteristics, a capability of interest for applications in spin-transfer torque devices.

  16. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    SciTech Connect

    Song, Kyungmi; Lee, Kyung-Jin

    2015-08-07

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  17. Perpendicular magnetic anisotropy in Co2Fe0.4Mn0.6Si

    NASA Astrophysics Data System (ADS)

    Ludbrook, B. M.; Ruck, B. J.; Granville, S.

    2016-07-01

    We report perpendicular magnetic anisotropy (PMA) in the half-metallic ferromagnetic Heusler alloy Co2Fe0.4Mn0.6Si (CFMS) in a MgO/CFMS/Pd trilayer stack. PMA is found for CFMS thicknesses between 1 and 2 nm, with a magnetic anisotropy energy density of KU=1.5 ×106 erg/cm3 for tCFMS=1.5 nm. Both the MgO and Pd layer are necessary to induce the PMA. We measure a tunable anomalous Hall effect, where its sign and magnitude vary with both the CFMS and Pd thickness.

  18. Anomalous Hall hysteresis in T m3F e5O12/Pt with strain-induced perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Xu, Yadong; Garay, Javier E.; Shi, Jing

    2016-10-01

    We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator T m3F e5O12 (TIG) films grown with pulsed laser deposition on a substituted G d3G a5O12 substrate which maximizes the tensile strain at the interface. In bilayers consisting of Pt and TIG, we observe large squared Hall hysteresis loops over a wide range of thicknesses of Pt at room temperature. When a thin Cu layer is inserted between Pt and TIG, the Hall hysteresis magnitude decays but stays finite as the thickness of Cu increases up to 5 nm. However, if the Cu layer is placed atop Pt instead, the Hall hysteresis magnitude is consistently larger than when the Cu layer with the same thickness is inserted in between for all Cu thicknesses. These results suggest that both the proximity-induced ferromagnetism and spin current contribute to the anomalous Hall effect.

  19. Magnetic and magnetotransport properties of erbium silicide epitaxial films

    NASA Astrophysics Data System (ADS)

    Chroboczek, J. A.; Briggs, A.; Joss, W.; Auffret, S.; Pierre, J.

    1991-02-01

    Hexagonal Er3Si5 films epitaxially grown on Si show strong anisotropies in magnetization and magnetotransport below the ordering temperature. The magnetoresistance has a cusplike positive anomaly or is negative and featureless for a magnetic field applied, respectively, along or perpendicular to the [0001] axis. A noncollinear structure, composed of an antiferromagnetic and a ferromagnetic component accounts for the magnetization data. The latter used in conjunction with the Yamada-Takada theory of magnetotransport accounts for the magnetoresistance data.

  20. Determination of spin torque efficiencies in heterostructures with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Pai, Chi-Feng; Mann, Maxwell; Tan, Aik Jun; Beach, Geoffrey S. D.

    2016-04-01

    We report that by measuring a current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin-Hall effect (SHE) contribution of the current-induced effective field per current density χSHE can be estimated for Pt- and Ta-based magnetic heterostructures with perpendicular magnetic anisotropy. We apply this technique to a Pt-based sample with its ferromagnetic (FM) layer being wedged deposited and discover an extra effective field contribution χWedged due to the asymmetric nature of the deposited FM layer. We confirm the correlation between χWedged and the asymmetric depinning process in FM layer during magnetization switching by magneto-optical Kerr microscopy. These results indicate the possibility of engineering deterministic spin-orbit torque switching by controlling the symmetry of domain expansion through the materials growth process.

  1. Buffer influence on magnetic dead layer, critical current, and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Frankowski, Marek; Żywczak, Antoni; Czapkiewicz, Maciej; Zietek, Sławomir; Kanak, Jarosław; Banasik, Monika; Powroźnik, Wiesław; Skowroński, Witold; Checiński, Jakub; Wrona, Jerzy; Głowiński, Hubert; Dubowik, Janusz; Ansermet, Jean-Philippe; Stobiecki, Tomasz

    2015-06-01

    We present a detailed study of Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of Magnetic Tunnel Junctions (MTJs) such as critical switching current and thermal stability. We study buffer/FeCoB/MgO/Ta/Ru and buffer/MgO/FeCoB/Ta/Ru layers, investigating the crystallographic texture, the roughness of the buffers, the magnetic domain pattern, the magnetic dead layer thickness, and the perpendicular magnetic anisotropy fields for each sample. Additionally, we examine the effect of the current induced magnetization switching for complete nanopillar MTJs with lateral dimensions of 270 × 180 nm. Buffer Ta 5/Ru 10/Ta 3 (thicknesses in nm), which has the thickest dead layer, exhibits a much larger thermal stability factor (63 compared to 32.5) while featuring a slightly lower critical current density value (1.25 MA/cm2 compared to 1.5 MA/cm2) than the buffer with the thinnest dead layer Ta 5/Ru 20/Ta 5. We can account for these results by considering the difference in damping which compensates for the difference in the switching barrier heights.

  2. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  3. Tuning of the nucleation field in nanowires with perpendicular magnetic anisotropy

    SciTech Connect

    Kimling, Judith; Gerhardt, Theo; Kobs, Andre; Vogel, Andreas; Peter Oepen, Hans; Merkt, Ulrich; Meier, Guido; Wintz, Sebastian; Im, Mi-Young; Fischer, Peter

    2013-04-28

    We report on domain nucleation in nanowires consisting of Co/Pt multilayers with perpendicular magnetic anisotropy that are patterned by electron-beam lithography, sputter deposition, and lift-off processing. It is found that the nucleation field can be tuned by changing the geometry of the wire ends. A reduction of the nucleation field by up to 60% is achieved when the wire ends are designed as tips. This contrasts with the behavior of wires with in-plane anisotropy where the nucleation field increases when triangular-pointed ends are used. In order to clarify the origin of the reduction of the nucleation field, micromagnetic simulations are employed. The effect cannot be explained by the lateral geometrical variation but is attributable to a local reduction of the perpendicular anisotropy caused by shadowing effects due to the resist mask during sputter deposition of the multilayer.

  4. Numerical evaluation of AC loss properties in assembled superconductor strips exposed to perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Kajikawa, K.; Funaki, K.; Shikimachi, K.; Hirano, N.; Nagaya, S.

    2009-10-01

    AC losses in superconductor strips assembled face-to-face are numerically evaluated by means of a finite element method. The external magnetic field is applied perpendicular to their flat face. It is also assumed that the superconductor strips have the voltage-current characteristics represented by the critical state model with constant critical current density. The influences of the number of strips and the gap length between strips on the losses are quantitatively discussed as compared with the conventional theoretical expressions for some special cases in order to understand only the geometrical effects on the perpendicular-field losses in actual assembled conductors with the finite numbers of Y-based superconducting tapes.

  5. Observations of thermally excited ferromagnetic resonance on spin torque oscillators having a perpendicularly magnetized free layer

    SciTech Connect

    Tamaru, S. Kubota, H.; Yakushiji, K.; Konoto, M.; Nozaki, T.; Fukushima, A.; Imamura, H.; Taniguchi, T.; Arai, H.; Tsunegi, S.; Yuasa, S.; Suzuki, Y.

    2014-05-07

    Measurements of thermally excited ferromagnetic resonance were performed on spin torque oscillators having a perpendicularly magnetized free layer and in-plane magnetized reference layer (abbreviated as PMF-STO in the following) for the purpose of obtaining magnetic properties in the PMF-STO structure. The measured spectra clearly showed a large main peak and multiple smaller peaks on the high frequency side. A Lorentzian fit on the main peak yielded Gilbert damping factor of 0.0041. The observed peaks moved in proportion to the out-of-plane bias field. From the slope of the main peak frequency as a function of the bias field, Lande g factor was estimated to be about 2.13. The mode intervals showed a clear dependence on the diameter of the PMF-STOs, i.e., intervals are larger for a smaller diameter. These results suggest that the observed peaks should correspond to eigenmodes of lateral spin wave resonance in the perpendicularly magnetized free layer.

  6. Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions

    SciTech Connect

    Zhang, Xiangli; Zhang, Zongzhi; Liu, Yaowen; Jin, Q. Y.

    2015-05-07

    Macrospin simulations are performed to model the magnetization switching driven by the combined action of electric-field and spin-polarized electric current (spin-transfer torque; STT) in MgO/CoFeB based magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy. The results indicate that at low current case, the free layer magnetization shows a fast toggle-like switching, the final parallel or antiparallel magnetization state is determined by the electric-field effect, and the STT just helps or resists it to reach the final state depending on the current direction. However, with the increase of current strength, the contribution of STT effect gradually increases, which eventually achieves a deterministic magnetization switching state. Simulations further demonstrate that by appropriately tuning the parameters of applied electric-field and current the power consumption can be easily reduced by two orders of magnitude.

  7. Size and voltage dependence of effective anisotropy in sub-100-nm perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Piotrowski, Stephan K.; Bapna, Mukund; Oberdick, Samuel D.; Majetich, Sara A.; Li, Mingen; Chien, C. L.; Ahmed, Rizvi; Victora, R. H.

    2016-07-01

    Magnetic tunnel junctions with perpendicular magnetic anisotropy are investigated using a conductive atomic force microscope. The 1.23 -nm Co40Fe40B20 recording layer coercivity exhibits a size dependence which suggests single-domain behavior for diameters ≤100 nm. Focusing on devices with diameters smaller than 100 nm, we determine the effect of voltage and size on the effective device anisotropy Keff using two different techniques. Keff is extracted both from distributions of the switching fields of the recording and reference layers and from measurement of thermal fluctuations of the recording layer magnetization when a field close to the switching field is applied. The results from both sets of measurements reveal that Keff increases monotonically with decreasing junction diameter, consistent with the size dependence of the demagnetization energy density. We demonstrate that Keff can be controlled with a voltage down to the smallest size measured, 64 nm.

  8. Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2015-06-21

    The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0 nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.

  9. Characterization of the magnetization reversal of perpendicular Nanomagnetic Logic clocked in the ns-range

    NASA Astrophysics Data System (ADS)

    Ziemys, Grazvydas; Trummer, Christian; Gamm, Stephan Breitkreutz-v.; Eichwald, Irina; Schmitt-Landsiedel, Doris; Becherer, Markus

    2016-05-01

    We have investigated the magnetization reversal of fabricated Co/Pt nanomagnets with perpendicular anisotropy within a wide range of magnetic field pulse widths. This experiment covers the pulse lengths from 700 ms to 20 ns. We observed that the commonly used Arrhenius model fits very well the experimental data with a single parameter set for pulse times above 100 ns (tp > 100 ns). However, below 100 ns (tp < 100 ns), a steep increase of the switching field amplitude is observed and the deviation from the Arrhenius model becomes unacceptable. For short pulse times the model can be adjusted by the reversal time term for the dynamic switching field which is only dependent on the pulse amplitude and not on temperature anymore. Precise modeling of the magnetization reversal in the sub-100 ns-range is crucially important to ensure reliable operation in the favored GHz-range as well as to explore and design new kinds of Nanomagnetic Logic circuits and architectures.

  10. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    NASA Astrophysics Data System (ADS)

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-07-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  11. Probing structure-property relationships in perpendicularly magnetized Fe/Cu(001) using MXLD and XPD

    SciTech Connect

    Cummins, T.R.; Waddill, G.D.; Goodman, K.W.

    1997-04-01

    Magnetic X-ray Linear Dichroism (MXLD) in Photoelectron Spectroscopy and X-Ray Photoelectron Diffraction (XPD) of the Fe 3p core level have been used to probe the magnetic structure-property relationships of perpendicularly magnetized Fe/Cu(001), in an element-specific fashion. A strong MEXLD effect was observed in the high resolution photoelectron spectroscopy of the Fe 3p at {open_quotes}normal{close_quotes} emission and was used to follow the loss of perpendicular ferromagnetic ordering as the temperature was raised toward room temperature. In parallel with this, {open_quotes}Forward Focussing{close_quotes} in XPD was used as a direct measure of geometric structure in the overlayer. These results and the implications of their correlation will be discussed. Additionally, an investigation of the effect of Mn doping of the Fe/Cu(001) will be described. These measurements were performed at the Spectromicroscopy Facility (Beamline 7.0.1) of the Advanced Light Source.

  12. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    PubMed Central

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-01-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3; these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ. PMID:27457186

  13. Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis

    NASA Astrophysics Data System (ADS)

    Mazraati, Hamid; Le, Tuan Q.; Awad, Ahmad A.; Chung, Sunjae; Hirayama, Eriko; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo; Åkerman, Johan

    2016-09-01

    We study the magnetodynamic modes of a magnetic tunnel junction with perpendicular magnetic easy axis (p-MTJ) in in-plane magnetic fields using device-level ferromagnetic resonance spectroscopy. We compare our experimental results to those of micromagnetic simulations of the entire p-MTJ. Using an iterative approach to determine the material parameters that best fit our experiment, we find excellent agreement between experiments and simulations in both the static magnetoresistance and magnetodynamics in the free and reference layers. From the micromagnetic simulations, we determine the spatial mode profiles, the localization of the modes and, as a consequence, their distribution in the frequency domain due to the inhomogeneous internal field distribution inside the p-MTJ under different applied field regimes. We also conclude that the excitation mechanism is a combination of the microwave voltage modulated perpendicular magnetic anisotropy, the microwave Oersted field, and the spin-transfer torque generated by the microwave current.

  14. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

    PubMed Central

    Lequeux, Steven; Sampaio, Joao; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hitoshi; Yuasa, Shinji; Grollier, Julie

    2016-01-01

    Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation. PMID:27539144

  15. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy.

    PubMed

    Lequeux, Steven; Sampaio, Joao; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hitoshi; Yuasa, Shinji; Grollier, Julie

    2016-01-01

    Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation. PMID:27539144

  16. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Lequeux, Steven; Sampaio, Joao; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hitoshi; Yuasa, Shinji; Grollier, Julie

    2016-08-01

    Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation.

  17. A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy.

    PubMed

    Lequeux, Steven; Sampaio, Joao; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Matsumoto, Rie; Kubota, Hitoshi; Yuasa, Shinji; Grollier, Julie

    2016-08-19

    Memristors are non-volatile nano-resistors which resistance can be tuned by applied currents or voltages and set to a large number of levels. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a multilevel memristor compatible with spin-torque magnetic random access memories. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation.

  18. On the perpendicular propagating modes in the ultra-relativistic weakly magnetized plasma

    SciTech Connect

    Abbas, Gohar; Iqbal, Z.; Murtaza, G.

    2015-03-15

    The dispersion relations for the weakly magnetized perpendicular propagating modes (O-mode, X-mode, and upper hybrid mode) based on the ultra-relativistic Fermi-Dirac distribution function with chemical potential are derived using the Vlasov–Maxwell model. The results are presented in terms of Polylog functions without making any approximation. It is found that as the ratio μ/T is increased, the cutoff points shift downward. A comparison is also performed with the previously derived results for ultra-relativistic Maxwellian distribution.

  19. Nanosecond magnetization reversal in nanocrystalline magnetic films

    NASA Astrophysics Data System (ADS)

    Rahman, I. Z.; Gandhi, A. A.; Khaddem-Mousavi, M. V.; Lynch, T. F.; Rahman, M. A.

    2007-03-01

    This paper reports on the investigation of dynamic magnetization reversal process in electrodeposited nanocrystalline Ni and Ni80Fe20 films by employing nanosecond magnetic pulse technique. The surface morphology has been investigated using SEM, EDAX, XRD and AFM analyses and static magnetic properties of the films are characterized by vibrating sample magnetometer (VSM). Two different techniques are designed and employed to study the nanosecond magnetization reversal process in nanocrystalline thin films: Magneto-Optical Kerr Effect (MOKE) and nanosecond pulsed field magnetometer. Results of dynamical behavior as a function of several variables such as magnitude of applied bias magnetic field, amplitude and width of the pulsed magnetic field are analyzed in detail using both techniques. A computer simulation package called Object Oriented Micro-Magnetic Framework (OOMMF) has been used to simulate the magnetic domain patterns of the samples.

  20. Angular tuning of the magnetic birefringence in rippled cobalt films

    SciTech Connect

    Arranz, Miguel A.; Colino, José M.

    2015-06-22

    We report the measurement of magnetically induced birefringence in rippled Co films. For this purpose, the magneto-optical properties of ion beam eroded ferromagnetic films were studied using Kerr magnetometry and magnetic birefringence in the transmitted light intensity. Upon sufficient ion sculpting, these ripple surface nanostructures developed a defined uniaxial anisotropy in the in-plane magnetization, finely tuning the magnetic birefringence effect. We have studied its dependence on the relative orientation between the ripple direction and the magnetic field, and found this effect to be dramatically correlated with the capability to neatly distinguish the mechanisms for the in-plane magnetization reversal, i.e., rotation and nucleation. This double refraction corresponds univocally to the two magnetization axes, parallel and perpendicular to the ripples direction. We have also observed that tuned birefringence in stack assemblies of rippled Co films, which enables us to technically manipulate the number and direction of refraction axes.

  1. Field-dependent perpendicular magnetic anisotropy and interfacial metal-insulator transition in CoFeB/MgO systems

    NASA Astrophysics Data System (ADS)

    Barsukov, Igor; Fu, Yu; Safranski, C.; Chen, Yu-Jin; Youngblood, B.; Goncalves, A.; Sampaio, L.; Arias, R.; Spasova, M.; Farle, M.; Krivorotov, I.

    2015-03-01

    The CoFeB/MgO systems play a central role in magnetic tunnel junction devices due to the high tunneling magnetoresistance ratio. A strong perpendicular anisotropy (PMA) and voltage-controlled anisotropy are beneficial for spintronics application. We study PMA in thin films of Ta/Co20Fe60B20/MgO in the thickness range of 0.9-2.5 nm and find that it can be best described by the first two order terms. Surprisingly, we find PMA to be strongly field-dependent. Our results show that the field dependence has significant implications for determining and customizing magnetic anisotropy in spintronic applications. Our data suggest that it can be caused by an inhomogeneous interfacial spin pinning with a possibly ferrimagnetic phase at the CoFeB/MgO interface. We perform magnetometry and transport measurements and find a magnetization peak and resistance transitions at 160K, which are consistent with the presence of an interfacial oxide phase undergoing a Morin-like transition.

  2. Asymmetric driven dynamics of Dzyaloshinskii domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Sánchez-Tejerina, L.; Alejos, Ó.; Martínez, E.; Muñoz, J. M.

    2016-07-01

    The dynamics of domain walls in ultrathin ferromagnetic strips with perpendicular magnetic anisotropy is studied from both numerical and analytical micromagnetics. The influence of a moderate interfacial Dzyaloshinskii-Moriya interaction associated to a bi-layer strip arrangement has been considered, giving rise to the formation of Dzyaloshinskii domain walls. Such walls possess under equilibrium conditions an inner magnetization structure defined by a certain orientation angle that make them to be considered as intermediate configurations between Bloch and Néel walls. Two different dynamics are considered, a field-driven and a current-driven dynamics, in particular, the one promoted by the spin torque due to the spin-Hall effect. Results show an inherent asymmetry associated with the rotation of the domain wall magnetization orientation before reaching the stationary regime, characterized by a constant terminal speed. For a certain initial DW magnetization orientation at rest, the rotation determines whether the reorientation of the DW magnetization prior to reach stationary motion is smooth or abrupt. This asymmetry affects the DW motion, which can even reverse for a short period of time. Additionally, it is found that the terminal speed in the case of the current-driven dynamics may depend on either the initial DW magnetization orientation at rest or the sign of the longitudinally injected current.

  3. Coulomb drag upturn in an undoped electron-hole bilayer in perpendicular and parallel magnetic fields.

    SciTech Connect

    Seamons, John Andrew; Lilly, Michael Patrick; Morath, Christian Paul; Reno, John Louis

    2010-03-01

    A low-temperature upturn of the Coulomb drag resistivity {rho}{sub D} measured in undoped electron-hole bilayer devices, possibly manifesting from formation of a superfluid condensate or density modulated state, was recently observed. Here the effects of perpendicular and parallel magnetic fields on the drag upturn are examined. Measurements of {rho}{sub D} and drive layer resistivity {rho}{sub xx-e} as a function of temperature and magnetic field in two uEHBL devices are presented. In B{sub {perpendicular}}, the drag upturn was enhanced as the field increased up to roughly .2 T, beyond which oscillations in {rho}{sub D} and {rho}{sub xx-e}, reflecting Landau level formation, begin appearing. A small phase offset between those oscillations, which decreased at higher fields and temperatures, was also observed. In B{sub {parallel}}, the drag upturn magnitude diminished as the field increased. Above the upturn regime, both {rho}{sub D} and {rho}{sub xx-e} were enhanced by B{sub {parallel}}, the latter via decreased screening of the uniform background impurities.

  4. Experimental study of playback giant magnetic resonance head nonlinearity in perpendicular recording

    NASA Astrophysics Data System (ADS)

    Luo, P.; Stoev, K.; Liu, F.; Vadde, A.; Gibbons, M.; Lederman, M.; Re, M.

    2003-05-01

    In this article, nonlinear distortions of the playback giant magnetic resonance (GMR) sensor in perpendicular recording are characterized in both time and frequency domains. We use three perpendicular media with different Mrt (0.46, 0.6, and 0.8 emu/cm2) and two groups of similar magnetic-read width (MRW) but different junction type [contiguous junction (CJ) and lead-over-lay (LOL)] GMR heads. Square-wave patterns at moderate densities are recorded to minimize NLTS, partial erasure, and transition broadening effects. Both time- and frequency-domain measurements indicate that the LOL-type GMR heads show playback nonlinearity (7%-23%), while the CJ-type GMR heads do not. Micromagnetic simulation is utilized to understand the hard bias field with different junction designs. The result indicates that the hard bias (HB) field in LOL type (HB field ˜6.9 Oe) at the air bearing surface (ABS) and stripe center is much lower than that in CJ type (HB field ˜54.0 Oe). Therefore, the free layer with large HB-HB distance will be more susceptible to saturation.

  5. Superdiffusion of two-dimensional Yukawa liquids due to a perpendicular magnetic field.

    PubMed

    Feng, Yan; Goree, J; Liu, Bin; Intrator, T P; Murillo, M S

    2014-07-01

    Stochastic transport of a two-dimensional (2D) dusty plasma liquid with a perpendicular magnetic field is studied. Superdiffusion is found to occur especially at higher magnetic fields with β of order unity. Here, β = ω(c)/ω(pd) is the ratio of the cyclotron and plasma frequencies for dust particles. The mean-square displacement MSD = 4D(α)t(α) is found to have an exponent α > 1, indicating superdiffusion, with α increasing monotonically to 1.1 as β increases to unity. The 2D Langevin molecular dynamics simulation used here also reveals that another indicator of random particle motion, the velocity autocorrelation function, has a dominant peak frequency ω(peak) that empirically obeys ω(peak)(2) = ω(c)(2) + ω(pd)(2)/4. PMID:25122399

  6. Dot arrays of L1{sub 0}-type FePt ordered alloy perpendicular films fabricated using low-temperature sputter film deposition

    SciTech Connect

    Shimatsu, T.; Aoi, H.; Inaba, Y.; Kataoka, H.; Sayama, J.; Okamoto, S.; Kitakami, O.

    2011-04-01

    Using ultrahigh vacuum sputter film deposition, we fabricated L1{sub 0}-type Fe{sub 50}Pt{sub 50} ordered alloy perpendicular films on MgO(001) single-crystal substrates and 2.5 in. glass disks at low substrate temperatures of 200-350 deg. C. Then we examined the magnetic properties of the dot arrays made from these films. The uniaxial magnetic anisotropy K{sub u} for L1{sub 0}-type FePt films (10 nm in thickness) deposited with a Pd underlayer on MgO(001) substrates reached about 2 x 10{sup 7} erg/cm{sup 3} at the substrate temperature T{sub s} of 200 deg. C, and 3 x 10{sup 7} erg/cm{sup 3} at T{sub s} = 250 deg. C. The order parameter S was about 0.46 at T{sub s} = 300 deg. C. Moreover, K{sub u} for L1{sub 0}-FePt films fabricated on glass disks using MgO/Cr underlayers shows 3.4 x 10{sup 7} erg/cm{sup 3} at T{sub s} = 300 deg. C, which was almost equal to that for FePt single-crystal films deposited on Pd/MgO(001). The switching field distribution {sigma}/H{sub c} for dot arrays made from L1{sub 0}-FePt film [5 nm in thickness, on Pd/MgO(001) at T{sub s} = 250 deg. C] was small; {sigma}/H{sub c}= 0.11 for a dot diameter of 15 nm. This value was smaller than that of hcp-Co{sub 75}Pt{sub 25} dot arrays ({sigma}/H{sub c} = 0.18). The difference was mainly attributable to the degree of the easy axis distribution. This result demonstrates the homogeneous formation of a L1{sub 0}-type ordered structure in the FePt layers.

  7. Microscopic magnetic properties of an oxygen-doped Tb-Fe thin film by magnetic Compton scattering

    SciTech Connect

    Agui, Akane; Unno, Tomoya; Matsumoto, Sayaka; Suzuki, Kousuke; Sakurai, Hiroshi; Koizumi, Akihisa

    2013-11-14

    The magnetic Compton scattering of a Tb{sub 32}Fe{sub 55}O{sub 13} film was measured in order to investigate the microscopic magnetization processes (i.e., the spin moment, orbital moment, and element specific moments). The trend of the spin magnetic moment was the same as that of the total magnetic moment but opposite to the orbital magnetic moment. In the low magnetic field region, the magnetic moments were not perfectly aligned perpendicular to the film surface, and the perpendicular components were found to mainly arise from the magnetic moment of Tb. Oxygen atoms hinder long range magnetic interaction and hence also affect the magnetization process of the magnetic moments of Tb and Fe.

  8. Influence of shape, size and internal structure on magnetic properties of core-edge nanodots with perpendicular anisotropy

    SciTech Connect

    Milińska, E. Wawro, A.

    2014-11-21

    The properties of perpendicularly magnetized isolated nanodots different in shape, size, and internal structure are simulated by micromagnetic calculations. Investigated dots are magnetically uniform, or they are composed of a core and an edge characterized by different anisotropy—stronger or weaker than that of the core. Based on calculated hysteresis loops, we discuss in details the magnetization reversal processes, stability of magnetic structures, and spin configurations in the dots.

  9. Contribution of individual interfaces in the MgO/Co/Pd trilayer to perpendicular magnetic anisotropy upon annealing

    SciTech Connect

    Kim, Minseok; Kim, Sanghoon; Ko, Jungho; Hong, Jongill

    2015-03-09

    The contribution of each interface of the MgO/Co/Pd trilayer to the perpendicular magnetic anisotropy (PMA) was studied by changing chemical and crystalline structures through annealing. We found that volumetric anisotropy in the MgO/Co/Pd trilayer was significantly increased due to enhanced magnetoelastic anisotropy caused by stress built up most likely at the MgO/Co interface during annealing. When the trilayer was annealed at 400 °C, the alloy formation at the Co/Pd interface additionally increased the volumetric anisotropy. Our x-ray magnetic circular dichroism study supported that those structural modifications led to an increase in the orbital moment through spin-orbit coupling (SOC) along the film normal two times larger than that of the as-deposited trilayer, thereby enhancing PMA greatly. Our experimental results prove that the Co/Pd interface, rather than the MgO/Co interface, plays an essential role in inducing strong PMA in the trilayer. The precise investigation of annealing effect on both volumetric and interfacial anisotropies can provide a methodological solution to improve the SOC of the trilayer that can serve as the core unit of spintronic devices.

  10. Perpendicular Magnetic Anisotropy of Tb/Fe and Gd/Fe Multilayers Studied with Torque Magnetometer

    NASA Astrophysics Data System (ADS)

    Chowdhury, Ataur

    Perpendicular magnetic anisotropy (PMA) of multilayers critically depend on the magnetic and structural ordering of the interface. To study the effect of interface on PMA, Tb/Fe and Gd/Fe multilayers with varying Fe (0.8-9.0 nm) and Gd (0.5-2.8 nm) or Tb (0.3-6.3 nm) layer thicknesses were fabricated by planar magnetron sputtering. The magnetometer results of spin orientation clearly reveals that samples with Gd or Tb layer thickness of more than 1.2 nm display no PMA, regardless of the Fe layer thickness. Tb/Fe and Gd/Fe multilayers with thin (<1.2 nm) Tb or Gd layers display large PMA, but no PMA is observed when the Fe layer thickness is increased to 4.0 nm and higher. The bulk magnetization and anisotropy energy constant of the samples are found to increase with increasing Fe layer thickness. Torque measurement also reveals that there are two distinctly different axes of spin alignment at different energy. Tb/Fe and Gd/Fe multilayers with similar composition reveal similar magnetic and structural characteristics, and it may imply that single-ion-anisotropy of rare-earth element, which is quite large for Tb ions and very small for Gd ions, may not be the dominating cause of PMA in Td/Fe and Gd/Fe multilayers. A detailed explanation of the results will be provided based on exchange interaction at the interface.

  11. Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

    PubMed Central

    Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L.; Zhang, Qianfan; Zhao, Weisheng

    2015-01-01

    Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM. PMID:26656721

  12. An Investigation of Perpendicular Gradients of Parallel Electric Field Associated with Magnetic Reconnection

    NASA Astrophysics Data System (ADS)

    Sturner, A. P.; Ergun, R.; Newman, D. L.; Lapenta, G.

    2014-12-01

    Many observations of particle heating and acceleration throughout the universe have been associated with magnetic reconnection. Generalized Ohm's Law describes how particles move under ideal and non-ideal conditions; however, it is insufficient for describing how the magnetic field itself changes. Initial studies have shown that a curl of a parallel electric field is necessary for reconnection to occur. These analytic studies have demonstrated that perpendicular gradients in the parallel electric field drive a counter-twisting of the magnetic field on either side of the localized parallel electric field. This results in the slippage of magnetic flux tubes and a break down of the 'frozen-in' condition. In this presentation, we analyze results from self-consistent implicit kinetic particle-in-cell simulations. The strongest gradients of parallel electric fields in the simulations are along the separator and not at the X-point. We will present where in the simulation domain the 'frozen-in' condition breaks down and compare it with the location of these gradients, and discuss the implications.

  13. Magnetic properties of strontium hexaferrite films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2012-08-01

    The magnetic properties of strontium hexaferrite (SrFe12O19) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50-700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of Ms=298 emu/cm3 and Hc=2540 Oe.

  14. Thermally activated switching of perpendicular magnet by spin-orbit spin torque

    SciTech Connect

    Lee, Ki-Seung; Lee, Seo-Won; Min, Byoung-Chul; Lee, Kyung-Jin

    2014-02-17

    We theoretically investigate the threshold current for thermally activated switching of a perpendicular magnet by spin-orbit spin torque. Based on the Fokker-Planck equation, we obtain an analytic expression of the switching current, in agreement with numerical result. We find that thermal energy barrier exhibits a quasi-linear dependence on the current, resulting in an almost linear dependence of switching current on the log-scaled current pulse-width even below 10 ns. This is in stark contrast to standard spin torque switching, where thermal energy barrier has a quadratic dependence on the current and the switching current rapidly increases at short pulses. Our results will serve as a guideline to design and interpret switching experiments based on spin-orbit spin torque.

  15. Anatomy of electric field control of perpendicular magnetic anisotropy at Fe/MgO interfaces

    NASA Astrophysics Data System (ADS)

    Ibrahim, F.; Yang, H. X.; Hallal, A.; Dieny, B.; Chshiev, M.

    2016-01-01

    The charge-mediated effect of electric field on the perpendicular magnetic anisotropy (PMA) of Fe/MgO interfaces is investigated using first-principles calculations. We present an approach by discussing this effect in relation to the intrinsic dipole field existing at the Fe/MgO interface. A firm correlation between the PMA and the interfacial dipole is established and further verified in the absence of an applied electric field. The on-site projected PMA analysis not only elucidates that the effect of electric field on the PMA extends beyond the interfacial Fe layer, but also shows that the second Fe layer carries the largest contribution to the effect. This observation is interpreted in relation to the orbital hybridization changes induced by applying an electric field.

  16. Exchange-coupling modified spin wave spectra in the perpendicularly magnetized Permalloy nanodot chain arrays

    NASA Astrophysics Data System (ADS)

    Dou, Jian; Hernandez, Sarah C.; Yu, Chengtao; Pechan, Michael J.; Folks, Liesl; Katine, Jordan A.; Carey, Matthew J.

    2010-05-01

    Spin wave spectra in exchange-coupled nanoscale dot chain arrays were studied using ferromagnetic resonance. The dot chain arrays, with dot diameters of 300 nm and thicknesses of 40 nm, coupled via Permalloy bridges of width ranging from 0 (no bridge) to 60 nm, were fabricated using e-beam lithography. In the perpendicularly magnetized isolated dots, multiple sharp ferromagnetic resonant peaks were observed, which are associated with the quantized in-plane wave vector due to the finite dot radius. These spectrum lines shift to higher fields for samples with wider bridges due to the increasing effective demagnetizing factor. For coupled dots, additional satellite peaks were observed at both sides of higher order spin wave modes and at the lower field side of the uniform mode. We show that these satellite peaks can be attributed to the excitation in each bridged dot and the interdot exchange coupling, respectively.

  17. Analytical TEM examinations of CoPt-TiO2 perpendicular magnetic recording media.

    PubMed

    Risner, Juliet D; Nolan, Thomas P; Bentley, James; Girt, Erol; Harkness, Samuel D; Sinclair, Robert

    2007-04-01

    For this analytical TEM study, nonmagnetic oxygen-rich boundaries were introduced into Co-Pt-alloy perpendicular recording media by cosputtering Co and Pt with TiO2. Increasing the TiO2 content resulted in changes to the microstructure and elemental distribution within grains and boundaries in these films. EFTEM imaging was used to generate composition maps spanning many tens of grains, thereby giving an overall depiction of the changes in elemental distribution occurring with increasing TiO2 content. Comparing EFTEM with spectrum-imaging maps created by high-resolution STEM with EDXS and EELS enabled both corroboration of EFTEM results and quantification of the chemical composition within individual grain boundary areas. The difficulty of interpreting data from EDXS for these extremely thin films is discussed. Increasing the TiO2 content of the media was found to create more uniformly wide Ti- and O-rich grain boundaries as well as Ti- and O-rich regions within grains.

  18. Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction

    PubMed Central

    Zhang, Xiangli; Wang, Chengjie; Liu, Yaowen; Zhang, Zongzhi; Jin, Q. Y.; Duan, Chun-Gang

    2016-01-01

    Effective manipulation of magnetization orientation driven by electric field in a perpendicularly magnetized tunnel junction introduces technologically relevant possibility for developing low power magnetic memories. However, the bipolar orientation characteristic of toggle-like magnetization switching possesses intrinsic difficulties for practical applications. By including both the in-plane (T//) and field-like (T⊥) spin-transfer torque terms in the Landau-Lifshitz-Gilbert simulation, reliable and deterministic magnetization reversal can be achieved at a significantly reduced current density of 5×109 A/m2 under the co-action of electric field and spin-polarized current, provided that the electric-field pulse duration exceeds a certain critical value τc. The required critical τc decreases with the increase of T⊥ strength because stronger T⊥ can make the finally stabilized out-of-plane component of magnetization stay in a larger negative value. The power consumption for such kind of deterministic magnetization switching is found to be two orders of magnitude lower than that of the switching driven by current only. PMID:26732287

  19. Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Zhang, Xiangli; Wang, Chengjie; Liu, Yaowen; Zhang, Zongzhi; Jin, Q. Y.; Duan, Chun-Gang

    2016-01-01

    Effective manipulation of magnetization orientation driven by electric field in a perpendicularly magnetized tunnel junction introduces technologically relevant possibility for developing low power magnetic memories. However, the bipolar orientation characteristic of toggle-like magnetization switching possesses intrinsic difficulties for practical applications. By including both the in-plane (T//) and field-like (T⊥) spin-transfer torque terms in the Landau-Lifshitz-Gilbert simulation, reliable and deterministic magnetization reversal can be achieved at a significantly reduced current density of 5×109 A/m2 under the co-action of electric field and spin-polarized current, provided that the electric-field pulse duration exceeds a certain critical value τc. The required critical τc decreases with the increase of T⊥ strength because stronger T⊥ can make the finally stabilized out-of-plane component of magnetization stay in a larger negative value. The power consumption for such kind of deterministic magnetization switching is found to be two orders of magnitude lower than that of the switching driven by current only.

  20. Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Neumann, L.; Meier, D.; Schmalhorst, J.; Rott, K.; Reiss, G.; Meinert, M.

    2016-10-01

    We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The effective spin Hall angle | ΘSH eff | ≈ 0.22 is independent of temperature, whereas the switching current increases strongly at low temperature. The increase indicates that the current induced switching itself is thermally activated, in agreement with a recent theoretical prediction. The dependence of the switching current on the in-plane assist field suggests the presence of an interfacial Dzyaloshinskii-Moriya interaction with D ≈ 0.23 mJ/m2, intermediate between the Pt/CoFe and Ta/CoFe systems. We show that the nc-W(O) is insensitive to annealing, which makes this system a good choice for the integration into magnetic memory or logic devices that require a high-temperature annealing process during fabrication.

  1. Spontaneous focusing of plasma flow in a weak perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Moritaka, Toseo; Kuramitsu, Yasuhiro; Liu, Yao-Li; Chen, Shih-Hung

    2016-03-01

    Structure formation of high-beta plasma flow in a perpendicular magnetic field is investigated in the ion kinetic regime by a fully kinetic particle-in-cell simulation. We demonstrate that directional plasma flow is spontaneously focused to form a sharp density structure. The primary focusing process comes from field-aligned electron inflow associated with the whistler mode and plasma confinement due to a self-generated magnetic field. The resulting concave magnetic field lines modulate ion gyration to cause a secondary focusing process with significant plasma concentration. Required conditions for these processes are determined by a dimensionless parameter α ≡ βi0(ΔW/ρi0), where βi0, ΔW, and ρi0 denote the plasma kinetic beta, window size, and ion gyration radius, respectively. The focusing process is apparent for small α, whereas diamagnetic expansion is dominant for large α. This condition describes a transition between diamagnetic cavity formation and the focusing process.

  2. Cosmic-ray parallel and perpendicular transport in turbulent magnetic fields

    SciTech Connect

    Xu, Siyao; Yan, Huirong E-mail: hryan@pku.edu.cn

    2013-12-20

    A correct description of cosmic-ray (CR) diffusion in turbulent plasma is essential for many astrophysical and heliospheric problems. This paper aims to present the physical diffusion behavior of CRs in actual turbulent magnetic fields, a model of which has been numerically tested. We perform test particle simulations in compressible magnetohydrodynamic turbulence. We obtain scattering and spatial diffusion coefficients by tracing particle trajectories. We find no resonance gap for pitch-angle scattering at 90°. Our result confirms the dominance of mirror interaction with compressible modes for most pitch angles, as revealed by the nonlinear theory. For cross-field transport, our results are consistent with normal diffusion predicted earlier for large scales. The diffusion behavior strongly depends on the Alfvénic Mach number and the particle's parallel mean free path. We, for the first time, numerically derive the dependence of M{sub A}{sup 4} for the perpendicular diffusion coefficient with respect to the mean magnetic field. We conclude that CR diffusion coefficients are spatially correlated to the local turbulence properties. On scales smaller than the injection scale, we find that CRs are superdiffusive. We emphasize the importance of our results in a wide range of astrophysical processes, including magnetic reconnection.

  3. Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque

    NASA Astrophysics Data System (ADS)

    Wang, Zhaohao; Zhao, Weisheng; Deng, Erya; Klein, Jacques-Olivier; Chappert, Claude

    2015-02-01

    We investigate the magnetization switching induced by spin-Hall-assisted spin-transfer torque (STT) in a three-terminal device consisting of a perpendicular-anisotropy magnetic tunnel junction (MTJ) and an β-W strip. Magnetization dynamics in free layer of MTJ is simulated by solving numerically a modified Landau-Lifshitz-Gilbert equation. The influences of spin-Hall write current (density, duration and direction) on the STT switching are evaluated. We find that the switching speed of a STT-MTJ can be significantly improved (reduced to <1 ns) by using a sufficiently large spin-Hall write current density (~25 MA cm-2) with an appropriate duration (~0.5 ns). Finally we develop an electrical model of three-terminal MTJ/β-W device with Verilog-A language and perform transient simulation of switching a 4 T/1MTJ/1β-W memory cell with Spectre simulator. Simulation results demonstrate that spin-Hall-assisted STT-MTJ has advantages over conventional STT-MTJ in write speed and energy.

  4. Dynamics of 2D Dust Clusters with a Perpendicular Magnetic Field

    SciTech Connect

    Greiner, Franko; Carstensen, Jan; Hou Lujing; Piel, Alexander

    2008-09-07

    The physics of two-dimensional (2D) dust clusters in an unmagnetized plasma sheath has been understood in dept. However, introduction of a perpendicular magnetic field into the dusty plasma sheath leads to some new effects, such as rotation and compression of dust clusters, whose mechanism is still unclear. It is found that even for a magnetic field as low as the earth magnetic field ({approx_equal}40 {mu}T), clusters rotate as rigid about their centers. It was proposed [U. Konopka, PRE 61, 1890 (2000)] that the ExB-induced ion flow drives the dust clusters into rotation. Simulations [L.-J. Hou, PoP 12, 042104 (2005)] based on the same hypothesis also reproduced the rotation of 2D clusters in a qualitative manner. However, this model cannot fully explain the experimental observations. We present detailed experimental investigations, which show that the rotation of a dust cluster critically depends on the detailed discharge geometry. In particular, the co-rotation of the background neutral gas and its role in driving dust-cluster rotation is proposed as a mechanism to set the dust cluster in rotation.

  5. Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis

    SciTech Connect

    Zhang, C.; Yamanouchi, M. Ikeda, S.; Sato, H.; Fukami, S.; Matsukura, F.; Ohno, H.

    2014-05-07

    We investigate in-plane current-induced magnetization reversal under an in-plane magnetic field in Hall bar shaped devices composed of Ta/CoFeB/MgO structures with perpendicular magnetic easy axis. The observed relationship between the directions of current and magnetization switching and Ta thickness dependence of magnetization switching current are accordance with those for magnetization reversal by spin transfer torque originated from the spin Hall effect in the Ta layer.

  6. Magnetic Anisotropies in Samarium-Cobalt Thin Films

    NASA Astrophysics Data System (ADS)

    Chen, Kailai

    A systemic study of the deposition processes and magnetic properties for the Sm-Co film system has been carried out. Films of Sm-Co system with various magnetic anisotropies have been synthesized through sputter deposition in both crystalline and amorphous phases. The origins of various anisotropies have been studied. Thermallized sputter deposition process control was used to synthesize Fe enriched Sm-Co films with rhombohedral Th_2Zn_{17} type structure. The film exhibited unusually strong textures with the crystallographic c axes of the crystallites aligned in the film plane. A large anisotropy was resulted with easy axis in the film plane. A well defined and large in-the-film-plane anisotropy of exceptionally high value of 3.3 times 10^6 erg/cm^3 has been obtained in the amorphous SmCo films by applying a magnetic field in the film plane during deposition. It was found that the in-the-film-plane anisotropy depended essentially on the applied field and Sm concentration. For films not synthesized through thermallized sputtering, the easy axis of the film could be reoriented through post deposition annealing. In contrast, in-plane easy axes of films synthesized through thermallized sputtering deposition could not be reoriented. A perpendicular anisotropy was also presented in the film synthesized through thermallized sputtering deposition. A large in-plane anisotropy was obtained in films deposited above ambient temperatures. It was concluded that the surface induced short range ordering was the origin of the in-the-film-plane anisotropy observed in amorphous film deposited in the presence of a magnetic field. The formation mechanism was different from that of the short range ordering induced by field annealing. The perpendicular anisotropy was shown to be growth induced. Large in-plane anisotropy in amorphous films was resulted from partial crystallization in the film. Both the formation of growth induced structure and partial crystallization in the film

  7. Current-induced magnetization switching of a three terminal perpendicular magnetic tunnel junction by spin-orbit torque

    NASA Astrophysics Data System (ADS)

    Cubukcu, Murat; Drouard, Marc; Boulle, Olivier; Garello, Kevin; Miron, Ioan Mihai; Langer, Juergen; Ocker, Berthold; Gambardella, Pietro; Gaudin, Gilles

    2014-03-01

    A current flowing in the plane of a magnetic multilayer with structural inversion asymmetry, such as Pt/Co/AlOx, creates a torque on the magnetization. This torque is due to the strong spin-orbit interaction present in such multilayers and can lead to fast magnetization reversal with a low writing energy.We will present the first proof of concept of a perpendicular spin-orbit torque magnetic random access memory (SOT-MRAM) cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The basic write and read operations, i.e., the magnetization reversal by current injection in the Ta track and its detection using the high TMR signal, are demonstrated. Our results open a path for the development of a novel class of three terminal MRAM combining fast, reliable and low energy writing. This work was supported by the European Commission under the Seventh Framework Program (Grant Agreement 318144, spot project).

  8. Arrays of nanowires of magnetic metals and multilayers: Perpendicular GMR and magnetic properties

    NASA Astrophysics Data System (ADS)

    Piraux, L.; Dubois, S.; Duvail, J. L.; Ounadjela, K.; Fert, A.

    1997-11-01

    The template strategy combined with electrodeposition techniques have been used to fabricate arrays of nanowires of magnetic metals and multilayers in the cylindrical pores of track-etched polymer membranes. The giant magnetoresistance effects have been investigated in two different types of multilayered nanowires systems: Co/Cu and Ni 80Fe 20/Cu. In addition, a comparative study of the magnetic properties of sub-micron Ni, Co, Fe and Ni 80Fe 20 wires is made by means of anisotropic magnetoresistance and magnetization experiments.

  9. Controlling magnetic anisotropy in epitaxial FePt(001) films

    SciTech Connect

    Lu Zhihong; Walock, M. J.; LeClair, P.; Butler, W. H.; Mankey, G. J.

    2009-07-15

    Epitaxial equiatomic Fe{sub 50}Pt{sub 50} thin films with a variable order parameter ranging from 0 to 0.9 and Fe{sub 100-x}Pt{sub x} thin films with x ranging from 33 to 50 were deposited on MgO (001) substrates by dc sputtering. A seed layer consisting of nonmagnetic Cr (4 nm)/Pt (12 nm) was used to promote the crystallinity of the magnetic films. The crystal structure and magnetic properties were gauged using x-ray diffraction and magnetometry. The magnetic anisotropy can be controlled by changing the order parameter. For Fe{sub 100-x}Pt{sub x} films, the increase in Fe composition leads to an increase in coercivity in the hard axis loop and causes a loss of perpendicular anisotropy.

  10. Magnetic Mesoporous Photonic Cellulose Films.

    PubMed

    Giese, Michael; Blusch, Lina K; Schlesinger, Maik; Meseck, Georg R; Hamad, Wadood Y; Arjmand, Mohammad; Sundararaj, Uttandaraman; MacLachlan, Mark J

    2016-09-13

    Novel hybrid materials of cellulose and magnetic nanoparticles (NPs) were synthesized and characterized. The materials combine the chiral nematic structural features of mesoporous photonic cellulose (MPC) with the magnetic properties of cobalt ferrite (CoFe2O4). The photonic, magnetic, and dielectric properties of the hybrid materials were investigated during the dynamic swelling and deswelling of the MPC films. It was observed that the dielectric properties of the generated MPC films increased tremendously following swelling in water, endorsing efficient swelling ability of the generated mesoporous films. The high magnetic permeability of the developed MPC films in conjunction with their superior dielectric properties, predominantly in the swollen state, makes them interesting for electromagnetic interference shielding applications. PMID:27588561

  11. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    PubMed

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  12. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V.; Samant, Mahesh G.; Felser, Claudia; Parkin, Stuart S. P.

    2016-01-01

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  13. Size dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions

    NASA Astrophysics Data System (ADS)

    Devolder, T.; Le Goff, A.; Nikitin, V.

    2016-06-01

    We have time resolved the spin-transfer-torque-induced switching in perpendicularly magnetized tunnel junctions of diameters from 50 to 250 nm in the subthreshold thermally activated regime. When the field and the spin torque concur to both favor the P to AP transition, the reversal yields monotonic resistance ramps that can be interpreted as a domain wall propagation through the device at velocities of the order of 17 to 30 nm/ns; smaller cells switch faster, and proportionally to their diameter. At the largest sizes, transient domain wall pinning can occasionally occur. When the field hinders the P to AP transition triggered by the spin torque, the P to AP switching is preceded by repetitive switching attempts, during which the resistance transiently increases until successful reversal occurs. At 50 nm, the P to AP switching proceeds reproducibly in 3 ns, with a monotonic featureless increase of the device resistance. In the reverse transition (AP to P), the variability of thermally activated reversal is not restricted to stochastic variations of incubation delays before the onset of reversal: several reversal paths are possible even in the smallest perpendicularly magnetized junctions. Besides, the nonuniform nature of the magnetic response seems still present at the nanoscale, with sometimes electrical signatures of strong disorder during the AP to P reversal. The AP to P transition is preceded by a strong instability of the AP states in devices larger than 100 nm. The resistance becomes extremely agitated before switching to P in a path yielding a slow (20 to 50 ns) and irregular increase of the conductance with substantial event-to-event variability. Unreversed bubbles of typical diameter 60 nm can persist a few additional microseconds in the largest junctions. The complexity of the AP to P switching is reduced but not suppressed when the junctions are downsized below 60 nm. The instability of the initial AP state is no longer detected but the other features

  14. Structural origin of perpendicular magnetic anisotropy in epitaxial CoPt3 nanostructures grown on WSe2(0001)

    NASA Astrophysics Data System (ADS)

    Liscio, F.; Maret, M.; Meneghini, C.; Mobilio, S.; Proux, O.; Makarov, D.; Albrecht, M.

    2010-03-01

    We present a detailed analysis of the local ordering in CoPt3 nanostructures epitaxially grown on WSe2(0001) and NaCl(001) low-energy surfaces. Polarized extended x-ray absorption fine-structure measurements at the CoK -edge show a local structural anisotropy in fcc CoPt3 nanostructures grown at 300 K on WSe2 . It is characterized by preferential Co-Co bonding along the in-plane direction balanced with preferential heteroatomic bonding along the out-of-plane direction and explains the unexpected perpendicular magnetic anisotropy. Such anisotropy almost vanishes in partially L12 -ordered nanostructures grown at 700 K. In contrast, the short-range order is isotropic in CoPt3 nanostructures grown on NaCl(001) at 370 K. These different behaviors emphasize the favorable role of Se segregated atoms of WSe2 in the dynamic segregation of Pt atoms at the advancing surface during codeposition, which governs the local structural anisotropy. In the absence of Se, as previously observed in epitaxial CoPt3 films grown on Ru buffer layers, the development of similar structural anisotropy requires higher growth temperatures (550-720 K).

  15. Electron energization through spontaneous turbulent magnetic reconnection at nonrelativistic perpendicular shocks

    NASA Astrophysics Data System (ADS)

    Niemiec, Jacek; Bohdan, Artem; Kobzar, Oleh; Pohl, Martin

    2016-06-01

    Results of recent kinetic two-dimensional particle-in-cell studies of high Mach-number nonrelativistic perpendicular shocks with applications to young supernova remnants are reported. These new large-scale simulations sample a representative portion of the shock surface to fully account for timedependent effects. They are performed for different orientations of the average large-scale magnetic field with respect to the 2D simulation plane to allow an insight into the 3D physics. We discuss the nonlinear shock structure and particle energization processes with emphasis on the dynamics on electron heating and pre-acceleration needed for their injection into diffusive shock acceleration. To this end we investigate the microphysics of electron acceleration during spontaneous turbulent magnetic reconnection at the shock ramp and compare the efficiency of these processes to electron energization resulting from their interactions with electrostatic Buneman modes in the shock foot. The influence of the global shock front nonstationarity effects such as the shock rippling and self-reformation is also discussed.

  16. An Analytic Study of the Perpendicularly Propagating Electromagnetic Drift Instabilities in the Magnetic Reconnection Experiment

    SciTech Connect

    Wang, Y., Kulsrud, R., Ji, H

    2008-12-03

    A local linear theory is proposed for a perpendicularly propagating drift instability driven by relative drifts between electrons and ions. The theory takes into account local cross-field current, pressure gradients and modest collisions as in the Magnetic Reconnection Experiment (MRX) [10]. The unstable waves have very small group velocities in the direction of the pressure gradient, but have a large phase velocity near the relative drift velocity between electrons and ions in the direction of cross-field current. By taking into account the electron-ion collisions and applying the theory in the Harris sheet, we establish that this instability could be excited near the center of the Harris sheet and have enough efoldings to grow to large amplitude before it propagates out of the unstable region. Comparing with the other magnetic reconnection related instabilities (LHDI, MTSI et.) studied previously, we believe the instability we find is a favorable candidate to produce anomalous resistivity because of its unique wave characteristics, such as electromagnetic component, large phase velocity, and small group velocity in the cross current layer direction.

  17. Large perpendicular magnetic anisotropy of single Co atom on MgO monolayer: A first-principles study

    SciTech Connect

    Shao, Bin; Shi, Wu-Jun; Feng, Min; Zuo, Xu

    2015-05-07

    Realizing the magnetic bit with a single atom is the ultimate goal for magnetic storage. Based on density functional theory, the magnetic anisotropy (MA) of single Co atom on MgO monolayer has been investigated. Results show that this two dimensional system possesses a large perpendicular MA, about 5.8 meV per Co atom. Besides, there exists remarkable unquenched orbital moments for different magnetization directions, which can be attributed to the reduction of coordination number in two dimensional system and is responsible for the enhanced MA. The Bloch pseudo-wavefunction and band structure of Co d-orbitals have been calculated to elucidate the origin of the perpendicular MA.

  18. Electrical detection of millimeter-waves by magnetic tunnel junctions using perpendicular magnetized L10-FePd free layer.

    PubMed

    Naganuma, Hiroshi; Kim, G; Kawada, Yuki; Inami, Nobuhito; Hatakeyama, Kenzo; Iihama, Satoshi; Nazrul Islam, Khan Mohammed; Oogane, Mikihiko; Mizukami, Shigemi; Ando, Yasuo

    2015-01-14

    Spin dynamics excited by spin-polarized current in magnetic tunnel junctions (MTJs) is potentially useful in nanoscale electrical oscillation sources and detection devices. A spin oscillator/detector should work at a high frequency, such as that of a millimeter-wave, where the quality of a semiconductor device is restricted by carrier mobility, the CR time constant, and so on. Developers of spin systems for practical use need to find out how to excite spin dynamics (i) in the millimeter-wave region, (ii) with low power consumption (ex: no external magnetic field, low damping material), and (iii) for broad frequency modulation. Here L10-ordered FePd alloy with perpendicular magnetocrystalline anisotropy (PMA) and a low damping constant, 0.007, was used for the free layer in the MTJs, and a homodyne-detected ferromagnetic resonance (FMR) signal was obtained at around 30 GHz together with the possibility of one-octave frequency modulation. The FMR signal in out-of-plane magnetized L10-ordered FePd free layer could be excited without an external magnetic field by injecting in-plane spin polarized alternating current. This study shows the potential utility of L10-ordered alloy materials such as FePt, CoPt, MnAl, and MnGa in a variety of millimeter-wave spin devices.

  19. Electrical detection of millimeter-waves by magnetic tunnel junctions using perpendicular magnetized L10-FePd free layer.

    PubMed

    Naganuma, Hiroshi; Kim, G; Kawada, Yuki; Inami, Nobuhito; Hatakeyama, Kenzo; Iihama, Satoshi; Nazrul Islam, Khan Mohammed; Oogane, Mikihiko; Mizukami, Shigemi; Ando, Yasuo

    2015-01-14

    Spin dynamics excited by spin-polarized current in magnetic tunnel junctions (MTJs) is potentially useful in nanoscale electrical oscillation sources and detection devices. A spin oscillator/detector should work at a high frequency, such as that of a millimeter-wave, where the quality of a semiconductor device is restricted by carrier mobility, the CR time constant, and so on. Developers of spin systems for practical use need to find out how to excite spin dynamics (i) in the millimeter-wave region, (ii) with low power consumption (ex: no external magnetic field, low damping material), and (iii) for broad frequency modulation. Here L10-ordered FePd alloy with perpendicular magnetocrystalline anisotropy (PMA) and a low damping constant, 0.007, was used for the free layer in the MTJs, and a homodyne-detected ferromagnetic resonance (FMR) signal was obtained at around 30 GHz together with the possibility of one-octave frequency modulation. The FMR signal in out-of-plane magnetized L10-ordered FePd free layer could be excited without an external magnetic field by injecting in-plane spin polarized alternating current. This study shows the potential utility of L10-ordered alloy materials such as FePt, CoPt, MnAl, and MnGa in a variety of millimeter-wave spin devices. PMID:25549140

  20. Invariant imbedding theory of mode conversion in inhomogeneous plasmas. II. Mode conversion in cold, magnetized plasmas with perpendicular inhomogeneity

    SciTech Connect

    Kim, Kihong; Lee, Dong-Hun

    2006-04-15

    A new version of the invariant imbedding theory for the propagation of coupled waves in inhomogeneous media is applied to the mode conversion of high frequency electromagnetic waves into electrostatic modes in cold, magnetized, and stratified plasmas. The cases where the external magnetic field is applied perpendicularly to the direction of inhomogeneity and the electron density profile is linear are considered. Extensive and numerically exact results for the mode conversion coefficients, the reflectances, and the wave electric and magnetic field profiles inside the inhomogeneous plasma are obtained. The dependencies of mode conversion phenomena on the magnitude of the external magnetic field, the incident angle, and the wave frequency are explored in detail.

  1. Characterization of Saturn's bow shock: Magnetic field observations of quasi-perpendicular shocks

    NASA Astrophysics Data System (ADS)

    Sulaiman, A. H.; Masters, A.; Dougherty, M. K.

    2016-05-01

    Collisionless shocks vary drastically from terrestrial to astrophysical regimes resulting in radically different characteristics. This poses two complexities. First, separating the influences of these parameters on physical mechanisms such as energy dissipation. Second, correlating observations of shock waves over a wide range of each parameter, enough to span across different regimes. Investigating the latter has been restricted since the majority of studies on shocks at exotic regimes (such as supernova remnants) have been achieved either remotely or via simulations, but rarely by means of in situ observations. Here we present the parameter space of MA bow shock crossings from 2004 to 2014 as observed by the Cassini spacecraft. We find that Saturn's bow shock exhibits characteristics akin to both terrestrial and astrophysical regimes (MA of order 100), which is principally controlled by the upstream magnetic field strength. Moreover, we determined the θBn of each crossing to show that Saturn's (dayside) bow shock is predominantly quasi-perpendicular by virtue of the Parker spiral at 10 AU. Our results suggest a strong dependence on MA in controlling the onset of physical mechanisms in collisionless shocks, particularly nontime stationarity and variability. We anticipate that our comprehensive assessment will yield deeper insight into high MA collisionless shocks and provide a broader scope for understanding the structures and mechanisms of collisionless shocks.

  2. Exchange-coupling modified spin wave spectra in the perpendicularly magnetized permalloy nanodot chain arrays

    NASA Astrophysics Data System (ADS)

    Dou, Jian; Hernandez, Sarah C.; Yu, Chengtao; Pechan, Michael J.; Folks, Liesl; Katine, Jordan A.; Carey, Matthew J.

    2009-03-01

    Spin wave spectra in exchange coupled nanoscale dot chain arrays were studied using ferromagnetic resonance. The dot chain arrays, with dot diameters of 300 nm and thicknesses of 40 nm, coupled via permalloy bridges of width ranging from 0 to 60 nm, were fabricated using e-beam lithography. In the perpendicularly magnetized isolated dots, multiple sharp ferromagnetic resonant peaks were observedootnotetextG.N.Kakazei et al, Appl. Phys. Lett. 85, 443 (2004), which is associated with the quantized in-plane wave vector due to the finite dot radius. These spectrum lines shift to higher fields for samples with wider bridges due to the increasing effective demagnetizing factor. Additional higher order spin wave modes were observed as satellite peaks near the resonance peaks at both higher and lower fields, with larger separation between adjacent spin wave peaks for wider bridge samples. These extra spin wave modes, associated with the inter-dot exchange coupling,will be described in detail. This work is supported by US Dept. of Energy at MU.

  3. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

    SciTech Connect

    Jeong, J. H.; Endoh, T.; Kim, Y.; Kim, W. K.; Park, S. O.

    2014-05-07

    To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50 s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5 kΩ to 39 kΩ. Moreover, an additional 500 s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5 kΩ to 13.9 kΩ. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8 nm and 12.8 nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20 nm.

  4. Energy distribution functions of kilovolt ions parallel and perpendicular to the magnetic field of a modified Penning discharge

    NASA Technical Reports Server (NTRS)

    Roth, R. J.

    1973-01-01

    The distribution function of ion energy parallel to the magnetic field of a modified Penning discharge has been measured with a retarding potential energy analyzer. These ions escaped through one of the throats of the magnetic mirror geometry. Simultaneous measurements of the ion energy distribution function perpendicular to the magnetic field have been made with a charge exchange neutral detector. The ion energy distribution functions are approximately Maxwellian, and the parallel and perpendicular kinetic temperatures are equal within experimental error. These results suggest that turbulent processes previously observed in this discharge Maxwellianize the velocity distribution along a radius in velocity space and cause an isotropic energy distribution. When the distributions depart from Maxwellian, they are enhanced above the Maxwellian tail.

  5. Preparation of perpendicular oriented TiO2 films via hydrothermal method: phase selection and growth control

    NASA Astrophysics Data System (ADS)

    Gao, Yun; Guo, Meilan; Xia, Xiaohong; Shao, Guosheng

    2013-03-01

    Either rutile or anatase vertical orientated TiO2 array films were synthesized successfully on FTO (F: SnO2) substrate via hydrothermal method through controlling the concentration of Cl- and SO42- . The density of nanorods can be adjusted by varying the volume ratio of ethanol/water, and the degree of orientation and crystallinity of TiO2 nanofilms were enhanced with increasing dosage of ethanol. Meanwhile, completely dense anatase films with [004] oriented growth appear within a very narrow concentration window when adding sulfuric acid into precursor. Besides, other alcohols such as methanol, n-propanol and n-butyl were also used as solvent to examine the role of alcohol type during hydrothermal process for both two phase films. The growth rate and degree of perpendicular orientation declined as the alkyl length of solvents increases. Hydrogen sensing characteristics of dense films of both rutile and anatase phases showed that there was a remarkable improvement of sensitivity response over reported data. It was found that rutile films have higher sensitivity while anatase films have faster response. This work is supported by Ministry of Education of China (211108) and Science and Technology of Wuhan (2010CDA024, 201110821251).

  6. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

    PubMed Central

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V.; Samant, Mahesh G.; Felser, Claudia; Parkin, Stuart S. P.

    2016-01-01

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn–Ge termination layers that are oppositely magnetized to the higher moment Mn–Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible. PMID:26776829

  7. Static and dynamic magnetic properties of cubic Mn-Co-Ga Heusler films

    SciTech Connect

    Demiray, A. S. Iihama, S.; Naganuma, H.; Oogane, M.; Ando, Y.; Kubota, T.; Mizukami, S. Miyazaki, T.

    2014-05-07

    We investigated the static and dynamic magnetic properties of thin films of Mn-Co-Ga Heusler compound. Gilbert damping and exchange stiffness constants of the films were evaluated by using the ferromagnetic resonance technique in the X-band regime (f = 9.4 GHz). By analyzing the experimental spectra, magnetic parameters of the films such as the line width and the Gilbert damping were deduced, and the exchange stiffness constant was estimated from the perpendicular standing spin-wave resonance. The Gilbert damping constant was estimated to be 0.017 in a specific film composition. The exchange stiffness constant showed a linear dependence on the film composition.

  8. Liquid-metal flow through a thin-walled elbow in a plane perpendicular to a uniform magnetic field

    SciTech Connect

    Walker, J.S.

    1986-04-01

    This paper presents analytical solutions for the liquid-metal flow through two straight pipes connected by a smooth elbow with the same inside radius. The pipes and the elbow lie in a plane which is perpendicular to a uniform, applied magnetic field. The strength of the magnetic field is assumed to be sufficiently strong that inertial and viscous effects are negligible. This assumption is appropriate for the liquid-lithium flow in the blanket of a magnetic confinement fusion reactor, such as a tokamak. The pipes and the elbow have thin metal walls.

  9. Experimental observation of further frequency upshift from dc to ac radiation converter with perpendicular dc magnetic field

    PubMed

    Higashiguchi; Yugami; Gao; Niiyama; Sasaki; Takahashi; Ito; Nishida

    2000-11-20

    A frequency upshift of a short microwave pulse is generated by the interaction between a relativistic underdense ionization front and a periodic electrostatic field with a perpendicular dc magnetic field. When the dc magnetic field is applied, further frequency upshift of 3 GHz is observed with respect to an unmagnetized case which has typically a GHz range. The radiation frequency depends on both the plasma density and the strength of the dc magnetic field, i.e., the plasma frequency and the cyclotron frequency. The frequency of the emitted radiation is in reasonable agreement with the theoretical values. PMID:11082591

  10. Magnetic anisotropy of epitaxial Co_2MnGa film

    NASA Astrophysics Data System (ADS)

    Pechan, Michael; Yu, Chentao; Carr, David; Palmstrom, Chris

    2004-03-01

    Magnetic Heusler alloys are gaining renewed interest due to the theoretical prediction of 100% polarization in the conduction electron bands -- an issue of particular importance in the the realization of spintronic devices. Co_2MnGa (001) films of 30 nm thick have been epitaxially grown on different substrate/buffer layers to produce various levels of strain in the magnetic layer. The present investigation utilizes ferromagnetic resonance (FMR) at both X- and Q-band. For the film grown on ErAs/InGaAs/InP, which exhibits a tensile strain, an induced uniaxial out-of-plane anisotropy (1.1× 10^6 erg/cm^3)^ is measured, which aids the shape anisotropy in constraining the magnetization to the film plane. In contrast, for the film grown on ScErAs/GaAs with a compression strain, a larger, negative induced anisotropy (- 3.3× 10^6 erg/cm^3) is measured whose easy axis perpendicular to the film plane. Both cases indicate a positive magnetostriction effect in Co_2MnGa film. In-plane angular dependence of FMR measurements shows the coexistence of a small 2-fold and 4-fold anisotropy in the order of 10^3 erg/cm^3 for these pseudomorphic films under both tensile and compression. The relationship between the in-plane easy axis and the crystalline orientations in these films depends upon strain.

  11. On the energy losses of hot worked Nd-Fe-B magnets and ferrites in a small alternating magnetic field perpendicular to a bias field

    SciTech Connect

    Staa, F. von; Hempel, K.A.; Artz, H.

    1995-11-01

    Torsion pendulum magnetometer measurements on ferrites and on neodymium-iron-boron permanent magnets are presented. The damping of the oscillation of the pendulum leads to information on the magnetic energy losses of the magnets in a small alternating magnetic field applied perpendicular to a bias field. The origin of the energy absorption is explained by the magnetization reversal of single-domain particles. It is shown experimentally that the energy absorption mechanism requires the ferromagnetic order of the sample, and that the magnetic field strength of maximal energy absorption coincides with the effective anisotropy field strength.

  12. Reverse draining of a magnetic soap film

    NASA Astrophysics Data System (ADS)

    Moulton, D. E.; Pelesko, J. A.

    2010-04-01

    We investigate the draining of a vertical magnetic soap film in the presence of a strong, nonuniform magnetic field. A colloidal suspension of magnetic nanoparticles in a regular soap solution yields a magnetic soap solution, from which a soap film is formed across an isolated frame. Experiments demonstrate that with a strong magnet placed above the frame, the film may be made to flow upward against gravity. The amount of film draining upward is altered by varying the distance between the frame and magnet. A first mathematical model is developed for the evolution of the film. Simulations demonstrate qualitative agreement with the experiment.

  13. Interlayer exchange coupling between [Pd/Co] multilayers and CoFeB/MgO layers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Jung, J. H.; Lim, S. H.; Lee, S. R.

    2012-12-01

    Interlayer exchange coupling between [Pd/Co] multilayers and CoFeB/MgO layers with perpendicular magnetic anisotropy (PMA) is investigated as functions of the thicknesses of the Ru spacer and CoFeB layer. The dependence of the coupling behavior on the Ru thickness is similar to that of in-plane anisotropy systems. However, one feature is that the PMA is strengthened through interlayer exchange coupling, as indicated by the fact that PMA of the interface-based CoFeB/MgO structure forms for a thick magnetic layer (1.4 nm). Another observation is the conversion from perpendicular to in-plane anisotropy with thick Ru spacers with almost zero exchange coupling strength.

  14. Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy

    SciTech Connect

    Zhao, Zhengyang; Jamali, Mahdi; Smith, Angeline K.; Wang, Jian-Ping

    2015-03-30

    Spin-orbit torques are studied in Ta/TbFeCo/MgO patterned structures, where the ferrimagnetic material TbFeCo provides a strong bulk perpendicular magnetic anisotropy (bulk-PMA) independent of the interfaces. The current-induced magnetization switching in TbFeCo is investigated in the presence of a perpendicular, longitudinal, or transverse field. An unexpected partial-switching phenomenon is observed in the presence of a transverse field unique to our bulk-PMA material. It is found that the anti-damping torque related with spin Hall effect is very strong, and a spin Hall angle is determined to be 0.12. The field-like torque related with Rashba effect is unobservable, suggesting that the interface play a significant role in Rashba-like torque.

  15. Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Bai, Zhaoqiang; Shen, Lei; Cai, Yongqing; Wu, Qingyun; Zeng, Minggang; Han, Guchang; Feng, Yuan Ping

    2014-10-01

    Employing density functional theory combined with the non-equilibrium Green's function formalism, we systematically investigate the structural, magnetic and magnetoelectric properties of the Co2FeAl(CFA)/MgO interface, as well as the spin-dependent transport characteristics of the CFA/MgO/CFA perpendicular magnetic tunnel junctions (p-MTJs). We find that the structure of the CFA/MgO interface with the oxygen-top FeAl termination has high thermal stability, which is protected by the thermodynamic equilibrium limit. Furthermore, this structure is found to have perpendicular magnetocrystalline anisotropy (MCA). Giant electric-field-assisted modifications of this interfacial MCA through magnetoelectric coupling are demonstrated with an MCA coefficient of up to 10-7 erg V-1 cm. In addition, our non-collinear spin transport calculations of the CFA/MgO/CFA p-MTJ predict a good magnetoresistance performance of the device.

  16. Constructive ITI-coded PRML system based on a two-track model for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Kurihara, Y.; Takeda, Y.; Takaishi, Y.; Koizumi, Y.; Osawa, H.; Ahmed, M. Z.; Okamoto, Y.

    In this paper, we study not only the new constructive inter-track interference (CITI) code based on the equalized level but also Viterbi detection algorithm taking into account the ITI from adjacent tracks for the perpendicular magnetic recording channel without a differentiator of two-track model. Although the investigation of this paper was not practical but theoretical, the result shows that the permissible percentage of ITI for conventional Viterbi detection to attain better performance compared with the case of single track is 26%, while the percentage for the proposed one is improved up to 50%. Further investigation has to be required under a more realistic system and moreover may be expanded into patterned media perpendicular magnetic recording.

  17. Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L10-Mn1.5Ga bilayers

    NASA Astrophysics Data System (ADS)

    Xiao, J. X.; Lu, J.; Liu, W. Q.; Zhang, Y. W.; Wang, H. L.; Zhu, L. J.; Deng, H. X.; Wei, D. H.; Xu, Y. B.; Zhao, J. H.

    2016-06-01

    We have studied the magnetic properties of Co (2-12 MLs)/L10-Mn1.5Ga (15 nm) bilayers without and with annealing at 300 °C by a combination of superconducting quantum interference device (SQUID) magnetometry and x-ray magnetic circular dichroism (XMCD). We find that the Co layer can remain perpendicularly magnetized when its thickness is less than six monolayers due to the coupling between Co and L10-Mn1.5Ga layers, which is doubly confirmed by both SQUID and XMCD measurements. Such an exchange coupling between L10-Mn1.5Ga and Co layers changes from ferromagnetic coupling to antiferromagnetic coupling after the annealing process. Furthermore, the magnetic coupling can also be tailored from ferromagnetic to antiferromagnetic by changing the L10-Mn1.5Ga surface from Mn-rich to Ga-rich. The first-principles calculations show that the interfacial coupling type is ferromagnetic for a Mn-terminated L10-Mn1.5Ga bilayer, while antiferromagnetic for a Ga-terminated bilayer. The spin and orbital moments of Co in the Co/L10-Mn1.5Ga bilayers are calculated according to the sum rules and the ratio of the orbital to spin magnetic moments for Co is not enhanced like other perpendicularly magnetized Co-based multilayers such as Co/Pd and Co/Pt.

  18. Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L10-Mn1.5Ga bilayers

    NASA Astrophysics Data System (ADS)

    Xiao, J. X.; Lu, J.; Liu, W. Q.; Zhang, Y. W.; Wang, H. L.; Zhu, L. J.; Deng, H. X.; Wei, D. H.; Xu, Y. B.; Zhao, J. H.

    2016-06-01

    We have studied the magnetic properties of Co (2–12 MLs)/L10-Mn1.5Ga (15 nm) bilayers without and with annealing at 300 °C by a combination of superconducting quantum interference device (SQUID) magnetometry and x-ray magnetic circular dichroism (XMCD). We find that the Co layer can remain perpendicularly magnetized when its thickness is less than six monolayers due to the coupling between Co and L10-Mn1.5Ga layers, which is doubly confirmed by both SQUID and XMCD measurements. Such an exchange coupling between L10-Mn1.5Ga and Co layers changes from ferromagnetic coupling to antiferromagnetic coupling after the annealing process. Furthermore, the magnetic coupling can also be tailored from ferromagnetic to antiferromagnetic by changing the L10-Mn1.5Ga surface from Mn-rich to Ga-rich. The first-principles calculations show that the interfacial coupling type is ferromagnetic for a Mn-terminated L10-Mn1.5Ga bilayer, while antiferromagnetic for a Ga-terminated bilayer. The spin and orbital moments of Co in the Co/L10-Mn1.5Ga bilayers are calculated according to the sum rules and the ratio of the orbital to spin magnetic moments for Co is not enhanced like other perpendicularly magnetized Co-based multilayers such as Co/Pd and Co/Pt.

  19. Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures

    NASA Astrophysics Data System (ADS)

    Oh, Young-Wan; Chris Baek, Seung-Heon; Kim, Y. M.; Lee, Hae Yeon; Lee, Kyeong-Dong; Yang, Chang-Geun; Park, Eun-Sang; Lee, Ki-Seung; Kim, Kyoung-Whan; Go, Gyungchoon; Jeong, Jong-Ryul; Min, Byoung-Chul; Lee, Hyun-Woo; Lee, Kyung-Jin; Park, Byong-Guk

    2016-10-01

    Spin–orbit torques arising from the spin–orbit coupling of non-magnetic heavy metals allow electrical switching of perpendicular magnetization. However, the switching is not purely electrical in laterally homogeneous structures. An extra in-plane magnetic field is indeed required to achieve deterministic switching, and this is detrimental for device applications. On the other hand, if antiferromagnets can generate spin–orbit torques, they may enable all-electrical deterministic switching because the desired magnetic field may be replaced by their exchange bias. Here we report sizeable spin–orbit torques in IrMn/CoFeB/MgO structures. The antiferromagnetic IrMn layer also supplies an in-plane exchange bias field, which enables all-electrical deterministic switching of perpendicular magnetization without any assistance from an external magnetic field. Together with sizeable spin–orbit torques, these features make antiferromagnets a promising candidate for future spintronic devices. We also show that the signs of the spin–orbit torques in various IrMn-based structures cannot be explained by existing theories and thus significant theoretical progress is required.

  20. Nanoscale patterning of CrPt3 magnetic thin films by using ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Suharyadi, Edi; Oshima, Daiki; Kato, Takeshi; Iwata, Satoshi

    We have successfully fabricated planar patterned CrPt3 ordered L12 alloy films by Kr+ ion irradiation. Planar-patterned CrPt3 nanodots with various bit sizes from 200 nm to 50 nm were successfully fabricated by 30 keV Kr+ ion irradiation at a dose of 2 × 1014 ions/cm2, where e-beam lithography was used for creating the resist mask. We have confirmed that the nanofabrication process didn't change the magnetic properties of CrPt3 ordered L12 alloy films. As-prepared film exhibited perpendicular hysteresis loop with the coercivity of 5.5 kOe. The typical perpendicular maze domain structure with the stripe structure was clearly seen in as-prepared CrPt3 film. Magnetic force microscopy (MFM) images of patterned CrPt3 nanodots indicated that each un-irradiated bit consists of localized perpendicular magnetic domain structures, which corresponds to perpendicular magnetization direction. Nanodots with bit size ⩽80 nm show either dark or bright contrast, suggesting single domain structure. No magnetic contrast in irradiated space is due to the suppressing of the magnetization by Kr+ ion irradiation.

  1. In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Grezes, C.; Rojas Rozas, A.; Ebrahimi, F.; Alzate, J. G.; Cai, X.; Katine, J. A.; Langer, J.; Ocker, B.; Khalili Amiri, P.; Wang, K. L.

    2016-07-01

    The effect of in-plane magnetic field on switching voltage (Vsw) and thermal stability factor (Δ) are investigated in electric-field-controlled perpendicular magnetic tunnel junctions (p-MTJs). Dwell time measurements are used to determine the voltage dependence of the energy barrier height for various in-plane magnetic fields (Hin), and gain insight into the Hin dependent energy landscape. We find that both Vsw and Δ decrease with increasing Hin, with a dominant linear dependence. The results are reproduced by calculations based on a macrospin model while accounting for the modified magnetization configuration in the presence of an external magnetic field.

  2. Perpendicular magnetic anisotropy in Ta|Co{sub 40}Fe{sub 40}B{sub 20}|MgAl{sub 2}O{sub 4} structures and perpendicular CoFeB|MgAl{sub 2}O{sub 4}|CoFeB magnetic tunnel junction

    SciTech Connect

    Tao, B. S.; Li, D. L.; Yuan, Z. H.; Liu, H. F.; Ali, S. S.; Feng, J. F.; Wei, H. X.; Han, X. F.; Liu, Y.; Zhao, Y. G.; Zhang, Q.; Guo, Z. B.; Zhang, X. X.

    2014-09-08

    Magnetic properties of Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) thin films sandwiched between Ta and MgAl{sub 2}O{sub 4} layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl{sub 2}O{sub 4} structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy K{sub i} = 1.22 erg/cm{sup 2}, which further increases to 1.30 erg/cm{sup 2} after annealing, while MgAl{sub 2}O{sub 4}/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0 nm, while that for top CoFeB layer is between 0.8 and 1.4 nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl{sub 2}O{sub 4}/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

  3. Cobalt-Based Hard Magnets, Thin Films and Multilayers

    NASA Astrophysics Data System (ADS)

    Gao, Chuan

    1991-02-01

    Co-based magnetic materials including bulk, thin film and magnetic multilayers have been studied. The purpose of the first part of this work is to study a Co -based transition metal alloy to be processed to result in significant enhancement of its magnetic properties (coercivity, magnetization, and energy product) in the absence rare earths. CoZr(Hf)BSi alloys have been studied. Rapidly quenched Co_ {78}Zr_{16}B_3Si_3 and Co_{76}Hf_ {76}B_3Si_3 showed the highest coercivity (6.7 kOe and 6.5 kOe respectively). This is the highest room temperature coercivity reported in a non -rare-earth containing magnet up to now. This system has excellent thermal stability. Co-based thin film alloys were also studied and we obtain coercivities as high as 700 Oe for sputtered thin films. This lies in between the maximum value obtained for as-cast bulk alloys (50 Oe) and rapidly quenched alloys (6.7 kOe). Multilayers were studied with the objective of determining the effect of interfaces on the magnetic properties of Co alloys. Multilayers of the form Co/Cu, Co_{95}B _5/Cu and Co/Al were studied and the interface anisotropy was found to favor a magnetization perpendicular to the film. Very thin magnetic layers led to very small coercivities since the size of magnetic domains was restricted. We also noted some interesting layer-layer magnetic interactions. Finally some unusual magnetization reversal behavior was noted in which the magnetic moment goes to zero and reverses before the applied field goes to zero.

  4. Competing Anisotropy-Tunneling Correlation of the CoFeB/MgO Perpendicular Magnetic Tunnel Junction: An Electronic Approach

    PubMed Central

    Yang, Chao-Yao; Chang, Shu-Jui; Lee, Min-Han; Shen, Kuei-Hung; Yang, Shan-Yi; Lin, Horng-Ji; Tseng, Yuan-Chieh

    2015-01-01

    We intensively investigate the physical principles regulating the tunneling magneto-resistance (TMR) and perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO magnetic tunnel junction (MTJ) by means of angle-resolved x-ray magnetic spectroscopy. The angle-resolved capability was easily achieved, and it provided greater sensitivity to symmetry-related d-band occupation compared to traditional x-ray spectroscopy. This added degree of freedom successfully solved the unclear mechanism of this MTJ system renowned for controllable PMA and excellent TMR. As a surprising discovery, these two physical characteristics interact in a competing manner because of opposite band-filling preference in space-correlated symmetry of the 3d-orbital. An overlooked but harmful superparamagnetic phase resulting from magnetic inhomogeneity was also observed. This important finding reveals that simultaneously achieving fast switching and a high tunneling efficiency at an ultimate level is improbable for this MTJ system owing to its fundamental limit in physics. We suggest that the development of independent TMR and PMA mechanisms is critical towards a complementary relationship between the two physical characteristics, as well as the realization of superior performance, of this perpendicular MTJ. Furthermore, this study provides an easy approach to evaluate the futurity of any emerging spintronic candidates by electronically examining the relationship between their magnetic anisotropy and transport. PMID:26596778

  5. In-plane electric field controlled perpendicular magnetic anisotropy in an FePt/[Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 heterostructure

    NASA Astrophysics Data System (ADS)

    Guo, Qi; Xu, Xiaoguang; Feng, Julong; Liu, Pengfei; Wu, Yong; Ma, Li; Zhou, Shiming; Miao, Jun; Jiang, Yong

    2016-06-01

    We report the in-plane electric field controlled perpendicular magnetic anisotropy of L10-FePt films deposited on polarized [Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 single crystal substrates. The out-of-plane coercivity (H c⊥) of FePt films exhibits a regular response to the in-plane electric field applied on substrates. The experimental change of H c⊥ is approximately 21.3% with the electric field varying from -10 to 10 kV/cm. The magnetization direction can be controlled by switching the electric field. The remanence of FePt films can also be manipulated by the electric field, so that a “W”-shaped sawtooth magnetic signal can be generated by a sawtooth electric field.

  6. A biocompatible magnetic film: synthesis and characterization

    PubMed Central

    Chatterjee, Jhunu; Haik, Yousef; Chen, Ching Jen

    2004-01-01

    Background Biotechnology applications of magnetic gels include biosensors, targeted drug delivery, artificial muscles and magnetic buckles. These gels are produced by incorporating magnetic materials in the polymer composites. Methods A biocompatible magnetic gel film has been synthesized using polyvinyl alcohol. The magnetic gel was dried to generate a biocompatible magnetic film. Nanosized iron oxide particles (γ-Fe2O3, ~7 nm) have been used to produce the magnetic gel. Results The surface morphology and magnetic properties of the gel films were studied. The iron oxide particles are superparamagnetic and the gel film also showed superparamagnetic behavior. Conclusion Magnetic gel made out of crosslinked magnetic nanoparticles in the polymer network was found to be stable and possess the magnetic properties of the nanoparticles. PMID:14761251

  7. Spin/orbital and magnetic quantum number selective magnetization measurements for CoFeB/MgO multilayer films.

    PubMed

    Yamazoe, M; Kato, T; Suzuki, K; Adachi, M; Shibayama, A; Hoshi, K; Itou, M; Tsuji, N; Sakurai, Y; Sakurai, H

    2016-11-01

    Spin selective magnetic hysteresis (SSMH) curves, orbital selective magnetic hysteresis (OSMH) curves and magnetic quantum number selective SSMH curves are obtained for CoFeB/MgO multilayer films by combining magnetic Compton profile measurements and superconducting quantum interference device (SQUID) magnetometer measurements. Although the SQUID magnetometer measurements do not show perpendicular magnetic anisotropy (PMA) in the CoFeB/MgO multilayer film, PMA behavior is observed in the OSMH and SSMH curves for the |m|  =  2 magnetic quantum number states. These facts indicate that magnetization switching behavior is dominated by the orbital magnetization of the |m|  =  2 magnetic quantum number states. PMID:27602698

  8. Spin/orbital and magnetic quantum number selective magnetization measurements for CoFeB/MgO multilayer films

    NASA Astrophysics Data System (ADS)

    Yamazoe, M.; Kato, T.; Suzuki, K.; Adachi, M.; Shibayama, A.; Hoshi, K.; Itou, M.; Tsuji, N.; Sakurai, Y.; Sakurai, H.

    2016-11-01

    Spin selective magnetic hysteresis (SSMH) curves, orbital selective magnetic hysteresis (OSMH) curves and magnetic quantum number selective SSMH curves are obtained for CoFeB/MgO multilayer films by combining magnetic Compton profile measurements and superconducting quantum interference device (SQUID) magnetometer measurements. Although the SQUID magnetometer measurements do not show perpendicular magnetic anisotropy (PMA) in the CoFeB/MgO multilayer film, PMA behavior is observed in the OSMH and SSMH curves for the |m|  =  2 magnetic quantum number states. These facts indicate that magnetization switching behavior is dominated by the orbital magnetization of the |m|  =  2 magnetic quantum number states.

  9. Micromagnetic study of high-power spin-torque oscillator with perpendicular magnetization in half-metallic Heusler alloy spin valve nanopillar under external magnetic fields

    NASA Astrophysics Data System (ADS)

    Huang, H. B.; Ma, X. Q.; Zhao, C. P.; Liu, Z. H.; Chen, L. Q.

    2015-01-01

    We investigated the high-power spin-torque oscillator in a half-metallic Heusler alloy Co2MnSi spin-valve nanopillars with perpendicular magnetization under external magnetic field using micromagnetic simulations. Our simulations show that the narrow optimum current of magnetization precession in the Heusler-based spin valve is broadened by introducing the surface anisotropy. The linear decrease of frequency with the out-of-plane magnetic field is obtained in our simulation. Additionally, the in-plane magnetic field dependence of frequency shows a parabolic curve which is explained by the magnetization trajectory tilting. Furthermore, we also discussed the decrease of output power using the excitation of non-uniform magnetization precession in the in-plane magnetic fields.

  10. Strain-induced modulation of perpendicular magnetic anisotropy in Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

    NASA Astrophysics Data System (ADS)

    Yu, Guoqiang; Wang, Zhenxing; Abolfath-Beygi, Maryam; He, Congli; Li, Xiang; Wong, Kin L.; Nordeen, Paul; Wu, Hao; Carman, Gregory P.; Han, Xiufeng; Alhomoudi, Ibrahim A.; Amiri, Pedram Khalili; Wang, Kang L.

    2015-02-01

    We demonstrate strain-induced modulation of perpendicular magnetic anisotropy (PMA) in (001)-oriented [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT) substrate/Ta/CoFeB/MgO/Ta structures using ferromagnetic resonance (FMR). An in-plane biaxial strain is produced by applying voltage between the two surfaces of the PMN-PT substrate, and is transferred to the ferromagnetic CoFeB layer, which results in tuning of the PMA of the CoFeB layer. The strain-induced change in PMA is quantitatively extracted from the experimental FMR spectra. It is shown that both first and second-order anisotropy terms are affected by the electric field, and that they have opposite voltage dependencies. A very large value of the voltage-induced perpendicular magnetic anisotropy modulation of ˜7000 fJ/V.m is obtained through this strain-mediated coupling. Using this FMR technique, the magnetostriction coefficient λ is extracted for the ultrathin 1.1 nm Co20Fe60B20 layer, and is found to be 3.7 × 10-5, which is approximately 4 times larger than the previously reported values for CoFeB films thicker than 5 nm. In addition, the effect of strain on the effective damping constant (αeff) is also studied and no obvious modulation of the αeff is observed. The results are relevant to the development of CoFeB-MgO magnetic tunnel junctions for memory applications.

  11. Spin Transfer Torque Switching and Perpendicular Magnetic Anisotropy in Full Heusler Alloy Co2FeAl-BASED Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Sukegawa, H.; Wen, Z. C.; Kasai, S.; Inomata, K.; Mitani, S.

    2014-12-01

    Some of Co-based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co-based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co2FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.

  12. Magnetic Tunnel Junctions with Perpendicular Anisotropy Using a Co2FeAl Full-Heusler Alloy

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, Shinya; Hayashi, Masamitsu; Mitani, Seiji; Inomata, Koichiro

    2012-06-01

    We fabricated perpendicularly magnetized magnetic tunnel junctions (p-MTJs) with an ultrathin Co2FeAl (CFA) full-Heusler alloy electrode having large interface magnetic anisotropy of CFA/MgO. An out-of-plane tunnel magnetoresistance (TMR) ratio of 53% at room temperature was observed in CFA/MgO/Co20Fe60B20 p-MTJs. By inserting a 0.1-nm-thick Fe (Co50Fe50) layer between the MgO and Co20Fe60B20 layers, The TMR ratio was significantly enhanced to 91% (82%) due to the improved interface. The bias voltage dependence of differential conductance did not clearly show coherent tunneling characteristics for ultrathin CFA-MTJs, suggesting that a higher TMR ratio may be achieved by improving the B2 ordering of CFA and/or interface structure.

  13. Spin dynamics induced by ultrafast heating with ferromagnetic/antiferromagnetic interfacial exchange in perpendicularly magnetized hard/soft bilayers

    SciTech Connect

    Ma, Q. L. E-mail: mizukami@wpi-aimr.tohoku.ac.jp; Miyazaki, T.; Mizukami, S. E-mail: mizukami@wpi-aimr.tohoku.ac.jp; Iihama, S.; Zhang, X. M.

    2015-11-30

    The laser-induced spin dynamics of FeCo in perpendicularly magnetized L1{sub 0}-MnGa/FeCo bilayers with ferromagnetic and antiferromagnetic interfacial exchange coupling (IEC) are examined using the time-resolved magneto-optical Kerr effect. We found a precessional phase reversal of the FeCo layer as the IEC changes from ferromagnetic to antiferromagnetic. Moreover, a precession-suspension window was observed when the magnetic field was applied in a certain direction for the bilayer with ferromagnetic IEC. Our observations reveal that the spin dynamics modulation is strongly dependent on the IEC type within the Landau-Lifshitz-Gilbert depiction. The IEC dependence of the precessional phase and amplitude suggests the interesting method for magnetization dynamics modulation.

  14. Chemical and Magnetic Order in Vapor-Deposited Metal Films

    NASA Astrophysics Data System (ADS)

    Rooney, Peter Wiliam

    1995-01-01

    A stochastic Monte Carlo model of vapor deposition and growth of a crystalline, binary, A_3 B metallic alloy with a negative energy of mixing has been developed which incorporates deposition and surface diffusion in a physically correct manner and allows the simulation of deposition rates that are experimentally realizable. The effects of deposition rate and growth temperature on the development of short range order (SRO) in vapor-deposited films have been examined using this model. SRO in the simulated films increases with growth temperature up to the point at which the temperature corresponds to the energy of mixing, but we see no corresponding development of anisotropic SRO (preferential ordering of A-B pairs along the growth direction). Epitaxial (100) and (111) CoPt_3 films have been deposited over a range of growth temperatures from -50^circ C to 800^circC. Curie temperature (T_{rm c}) and saturation magnetization are dramatically enhanced in those films grown near 400^circ C over the values expected for the chemically homogeneous alloy. Magnetization data indicates that the high T _{rm c} films are inhomogeneous. These phenomena are interpreted as evidence of a previously unobserved magnetically driven miscibility gap in the Co-Pt phase diagram. Films grown near 400^circ C exhibit large uniaxial perpendicular magnetic anisotropy that cannot be accounted for by strain. The observed anisotropy coincides with the chemical phase separation and it seems likely that these two phenomena are related. Long range order (LRO) in the as-deposited films peaks at a growth temperature of 630^circC and then decreases with decreasing growth temperature. The decrease in LRO is either due to kinetic frustration or to competition from magnetically induced Co clustering. Theoretical phase diagrams based on the appropriate Blume-Emery-Griffiths Hamiltonian suggest the latter.

  15. Surface tension measurement techniques of magnetic fluids at an interface between different fluids using perpendicular field instability

    NASA Astrophysics Data System (ADS)

    Amin, M. Shahrooz; Elborai, Shihab; Lee, Se-Hee; He, Xiaowei; Zahn, Markus

    2005-05-01

    Two measurement techniques to determine the surface tension of ferrofluids using the perpendicular field instability are described. Four ferrofluid layers were examined with magnetic field applied perpendicularly to the surface of (1) oil-based ferrofluid in air; (2) water-based ferrofluid in air, (3) oil-based ferrofluid, and (4) fluorocarbon-based ferrofluid, both below a blend of 50% n-Propyl alcohol and 50% deionized water (propanol). Surface tension was accurately calculated by utilizing the measured Taylor wavelength from measurements of incipient fluid instability peaks and the measured densities of fluids. For cases (1) and (2), the calculated surface tension values were in good agreement with a tensiometer measurement. No accurate tensiometer measurements were conducted for the superposed liquids (3) and (4) since accurate tensiometer measurements are difficult for a two fluid layer system. The second less accurate method used the ferrofluid's nonlinear Langevin magnetization characteristics to compute the surface tension from incipience of interfacial instability conditions. Discrepancies between the surface tensions measured by the two methods were probably due to the ferrofluid particle size distributions and the strong dependence of the ferrofluid magnetization on particle size.

  16. Detrimental effect of interfacial Dzyaloshinskii-Moriya interaction on perpendicular spin-transfer-torque magnetic random access memory

    SciTech Connect

    Jang, Peong-Hwa; Lee, Seo-Won E-mail: kj-lee@korea.ac.kr; Song, Kyungmi; Lee, Seung-Jae; Lee, Kyung-Jin E-mail: kj-lee@korea.ac.kr

    2015-11-16

    Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions. However, its effect on the performance of perpendicular spin transfer torque memory has not been explored yet. We show based on numerical studies that the interfacial Dzyaloshinskii-Moriya interaction decreases the thermal energy barrier while increases the switching current. As high thermal energy barrier as well as low switching current is required for the commercialization of spin torque memory, our results suggest that the interfacial Dzyaloshinskii-Moriya interaction should be minimized for spin torque memory applications.

  17. Structure and magnetic properties of epitaxial terbium- iron thin films

    NASA Astrophysics Data System (ADS)

    Wang, Chuei-Tang

    TbFe2 is a giant magnetostrictive material which has the largest known room temperature magnetostriction constant. The large magnetostriction constant suggests that we can manipulate the magnetic anisotropy of the material using small strains. Other research groups have grown amorphous and polycrystalline TbFe2 films; however, these films lose giant mangetostriction because of diordered atomic structure in the amorphous films and random grain orientation in the polycrystalline films. Single-crystal structure is needed to achieve the large magnetostriction, so epitaxial growth of TbFe2 thin films is necessary. The goal of this research is to grow epitaxial TbFe2 films and study the effect of film strain on magnetic anisotropy. A technique was developed to grow epitaxial TbFe2films using DC magnetron sputtering. The films were grown in a UHV system using elemental Tb and Fe sputtering targets and single-crystal Al2O3, MgO, and CaF2 substrates. (110) -oriented Mo, W, and Nb were used as buffer layers to provide the base for epitaxial growth and to prevent chemical reactions between the TbFe2 films and the substrates. On the Mo and W buffer layers the TbFe2 film is (111) -oriented but on the Nb buffer layer it is (110) -oriented. Preliminary calculation of magnetostrictive anisotropy in TbFe2(111) films predicts that compressive strain greater than 0.5% will induce perpendicular magnetization while tensile strain greater than 0.5% will induce an in- plane magnetization. Epitaxial growth on CaF2 provides compressive thermal strain of 0.51%, and SQUID measurements confirmed that these samples did have perpendicular magnetization. On the other hand, Al2O3 provides tensile thermal strain of 0.56%, and SQUID measurements showed the films on Al2O3 were in-plane. The values of strain on these three substrates were determined by strain measurement from synchrotron radiation. X-ray epitaxial quality measurements revealed a new orientation relationship, R30o, at the TbFe2

  18. Direct Observation of Field and Temperature Induced Domain Replication in Dipolar Coupled Perpendicular Anisotropy Films

    SciTech Connect

    Hauet, T.; Gunther, C.M.; Pfau, B.; Eisebitt, S.; Fischer, P.; Rick, R. L.; Thiele, J.-U.; Hellwig, O.; Schabes, M.E.

    2007-07-01

    Dipolar interactions in a soft/Pd/hard [CoNi/Pd]{sub 30}/Pd/[Co/Pd]{sub 20} multilayer system, where a thick Pd layer between two ferromagnetic units prevents direct exchange coupling, are directly revealed by combining magnetometry and state-of-the-art layer resolving soft x-ray imaging techniques with sub-100-nm spatial resolution. The domains forming in the soft layer during external magnetic field reversal are found to match the domains previously trapped in the hard layer. The low Curie temperature of the soft layer allows varying its intrinsic parameters via temperature and thus studying the competition with dipolar fields due to the domains in the hard layer. Micromagnetic simulations elucidate the role of [CoNi/Pd] magnetization, exchange, and anisotropy in the duplication process. Finally, thermally driven domain replication in remanence during temperature cycling is demonstrated.

  19. Dirac semimetal thin films in in-plane magnetic fields

    PubMed Central

    Siu, Zhuo Bin; Jalil, Mansoor B. A.; Tan, Seng Ghee

    2016-01-01

    In this work we study the effects of in-plane magnetic fields on thin films of the Dirac Semimetal (DSM) Na3Bi where one of the in-plane directions is perpendicular to the k-separation between the two Weyl nodes that exist for each spin orientation. We show numerically that the states localized near the surfaces of these thin films are related to the Fermi arc states in semi-infinite slabs. Due to the anisotropy between the two in-plane directions, the application of a magnetic field along these directions have differing effects. A field parallel to the k space separation between the Weyl nodes leads to a broadening of the surface state band and the formation of an energy plateau, while a perpendicular field shifts the energy where the hole and particle bands meet upwards, and sharpens the tips of the bands. We illustrate the effects of these changes to the dispersion relation by studying the transmission from a source segment without a magnetic field to a drain segment with a field, with the field and interface at various in-plane directions. PMID:27721387

  20. Dirac semimetal thin films in in-plane magnetic fields

    NASA Astrophysics Data System (ADS)

    Siu, Zhuo Bin; Jalil, Mansoor B. A.; Tan, Seng Ghee

    2016-10-01

    In this work we study the effects of in-plane magnetic fields on thin films of the Dirac Semimetal (DSM) Na3Bi where one of the in-plane directions is perpendicular to the k-separation between the two Weyl nodes that exist for each spin orientation. We show numerically that the states localized near the surfaces of these thin films are related to the Fermi arc states in semi-infinite slabs. Due to the anisotropy between the two in-plane directions, the application of a magnetic field along these directions have differing effects. A field parallel to the k space separation between the Weyl nodes leads to a broadening of the surface state band and the formation of an energy plateau, while a perpendicular field shifts the energy where the hole and particle bands meet upwards, and sharpens the tips of the bands. We illustrate the effects of these changes to the dispersion relation by studying the transmission from a source segment without a magnetic field to a drain segment with a field, with the field and interface at various in-plane directions.

  1. In-plane current induced domain wall nucleation and its stochasticity in perpendicular magnetic anisotropy Hall cross structures

    SciTech Connect

    Sethi, P.; Murapaka, C.; Lim, G. J.; Lew, W. S.

    2015-11-09

    Hall cross structures in magnetic nanowires are commonly used for electrical detection of magnetization reversal in which a domain wall (DW) is conventionally nucleated by a local Oersted field. In this letter, we demonstrate DW nucleation in Co/Ni perpendicular magnetic anisotropy nanowire at the magnetic Hall cross junction. The DWs are nucleated by applying an in-plane pulsed current through the nanowire without the need of a local Oersted field. The change in Hall resistance, detected using anomalous Hall effect, is governed by the magnetic volume switched at the Hall junction, which can be tuned by varying the magnitude of the applied current density and pulse width. The nucleated DWs are driven simultaneously under the spin transfer torque effect when the applied current density is above a threshold. The possibility of multiple DW generation and variation in magnetic volume switched makes nucleation process stochastic in nature. The in-plane current induced stochastic nature of DW generation may find applications in random number generation.

  2. Magnetic ramp scale at supercritical perpendicular collisionless shocks: Full particle electromagnetic simulations

    SciTech Connect

    Yang, Zhongwei; Lu, Quanming; Gao, Xinliang; Huang, Can; Yang, Huigen; Hu, Hongqiao; Han, Desheng; Liu, Ying

    2013-09-15

    Supercritical perpendicular collisionless shocks are known to exhibit foot, ramp, and overshoot structures. The shock ramp structure is in a smaller scale in contrast to other microstructures (foot and overshoot) within the shock front. One-dimensional full particle simulations of strictly perpendicular shocks over wide ranges of ion beta β{sub i}, Alfvén Mach number M{sub A}, and ion-to-electron mass ratio m{sub i}/m{sub e} are presented to investigate the impact of plasma parameters on the shock ramp scale. Main results are (1) the ramp scale can be as small as several electron inertial length. (2) The simulations suggest that in a regime below the critical ion beta value, the shock front undergoes a periodic self-reformation and the shock ramp scale is time-varying. At higher ion beta values, the shock front self-reformation is smeared. At still higher ion beta value, the motion of reflected ions is quite diffuse so that they can lead to a quasi-steady shock ramp. Throughout the above three conditions, the shock ramp thickness increases with β{sub i}. (3) The increase (decrease) in Mach number and the decrease (increase) in the beta value have almost equivalent impact on the state (i.e., stationary or nonstationary) of the shock ramp. Both of front and ramp thicknesses are increased with M{sub A}.

  3. Nano-fabricated perpendicular magnetic anisotropy electrodes for lateral spin valves and observation of Nernst-Ettingshausen related signals

    SciTech Connect

    Chejanovsky, N.; Sharoni, A.

    2014-08-21

    Lateral spin valves (LSVs) are efficient structures for characterizing spin currents in spintronics devices. Most LSVs are based on ferromagnetic (FM) electrodes for spin-injection and detection. While there are advantages for using perpendicular magnetic anisotropy (PMA) FM, e.g., stability to nano-scaling, these have almost not been studied. This is mainly due to difficulties in fabricating PMA FMs in a lateral geometry. We present here an efficient method, based on ion-milling through an AlN mask, for fabrication of LSVs with multi-layered PMA FMs such as Co/Pd and Co/Ni. We demonstrate, using standard permalloy FMs, that the method enables efficient spin injection. We show the multi-layer electrodes retain their PMA properties as well as spin injection and detection in PMA LSVs. In addition, we find a large asymmetric voltage signal which increases with current. We attribute this to a Nernst-Ettingshausen effect caused by local Joule heating and the perpendicular magnetic easy axis.

  4. Optically induced spin wave dynamics in [Co/Pd]{sub 8} antidot lattices with perpendicular magnetic anisotropy

    SciTech Connect

    Pal, S.; Das, K.; Barman, A.; Klos, J. W.; Gruszecki, P.; Krawczyk, M.; Hellwig, O.

    2014-10-20

    We present an all-optical time-resolved measurement of spin wave (SW) dynamics in a series of antidot lattices based on [Co(0.75 nm)/Pd(0.9 nm)]{sub 8} multilayer (ML) systems with perpendicular magnetic anisotropy. The spectra depend significantly on the areal density of the antidots. The observed SW modes are qualitatively reproduced by the plane wave method. The interesting results found in our measurements and calculations at small lattice constants can be attributed to the increase of areal density of the shells with modified magnetic properties probably due to distortion of the regular ML structure by the Ga ion bombardment and to increased coupling between localized modes. We propose and discuss the possible mechanisms for this coupling including exchange interaction, tunnelling, and dipolar interactions.

  5. Lateral Domain Transfer In a Magnetic Nanowire With Perpendicular-to-Plane-Anisotropy For Three-Dimensional Memory Applications

    NASA Astrophysics Data System (ADS)

    Gokce, Aisha; Ozatay, Ozhan; Bulut, Bugra; Rainey, Coleman; Katine, Jordan A.; Hauet, Thomas; Giordano, Anna; Finocchio, Giovanni

    2015-03-01

    Spin torque driven magnetic domain transport has been of great interest with potential applications in three dimensional magnetic race track memory and also for domain wall logic. Here we report on experimental and micromagnetic modelling results of spin torque driven magnetic domain transport in CoNi/Pd multilayers with perpendicular-to-plane anisotropy patterned to form magnetic nanowires with double constrictions where domains can be moved with spin polarized current pulses in between constricted sites. The domain nucleation was triggered by joule heating in the presence of a magnetic tip a few nm above the surface which was otherwise in the remanent state. We show that with low or high amplitude nanosecond current pulses two different types of domain transfer behavior is possible: a replicated or partially displaced domain in the neighboring constriction, or an expansion of the domain into the spacer region and the neighboring pinning site. Micromagnetic modelling of the domain transport in such devices suggests that in addition to the experimentally observed behavior a third regime where the full transfer of a single domain is also attainable. Our study shows that CoNi/Pd nanowires can be of potential practical use in a three dimensional memory structure.

  6. Field driven ferromagnetic phase nucleation and propagation from the domain boundaries in antiferromagnetically coupled perpendicular anisotropy films

    SciTech Connect

    Hauet, Thomas; Gunther, Christian M.; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

    2008-12-09

    We investigate the reversal process in antiferromagnetically coupled [Co/Pt]{sub X-1}/{l_brace}Co/Ru/[Co/Pt]{sub X-1}{r_brace}{sub 16} multilayer films by combining magnetometry and Magnetic soft X-ray Transmission Microscopy (MXTM). After out-of-plane demagnetization, a stable one dimensional ferromagnetic (FM) stripe domain phase (tiger-tail phase) for a thick stack sample (X=7 is obtained), while metastable sharp antiferromagnetic (AF) domain walls are observed in the remanent state for a thinner stack sample (X=6). When applying an external magnetic field the sharp domain walls of the thinner stack sample transform at a certain threshold field into the FM stripe domain wall phase. We present magnetic energy calculations that reveal the underlying energetics driving the overall reversal mechanisms.

  7. Hinged, Magnetic Holder For Radiographic Film

    NASA Technical Reports Server (NTRS)

    Pierce, Darryl E.

    1989-01-01

    Hinged holder equipped with magnets enables positive, accurate, and repeatable placement and orientation of radiographic film at hidden and otherwise inaccessible location. Made from simple, readily available parts. Film and holder inserted in end of duct and pulled along by magnets on outside. Holder removed by reversing sequence of motions.

  8. Magnetic properties of nano-patterned GaMnAs films grown on ZnCdSe buffer layers

    NASA Astrophysics Data System (ADS)

    Dong, Sining; Li, Xiang; Kanzyuba, Vasily; Yoo, Taehee; Liu, Xinyu; Dobrowolska, Malgorzata; Furdyna, Jacek

    Magnetic semiconductor nanostructures are attracting intense attention, both because of their fundamental physical properties, and because of the promise which they hold for building smaller, faster and more energy-efficient devices. In this study we report successful MBE growth of GaMnAs films on the GaAs (100) substrates with ZnCdSe buffer layers, which results in perpendicular magnetic easy axis in the GaMnAs films. The GaMnAs/ZnCdSe films have been etched into nano-stripe shapes with various widths below 200nm by e-beam lithography, which resulted in a new geometry of interest for perpendicular magnetic recording. Magnetic anisotropy of as-grown GaMnAs films and nano-stripes was then studied by SQUID magnetometry. The results indicate that the GaMnAs films consist of magnetic domains with magnetization normal to the film plane, having rather high coercivety, which survives after nanofabrication. This is also confirmed by the dynamics of the domain motion as shown by AC susceptibility measurements. These findings are of interest for understanding the magnetic anisotropy mechanisms in GaMnAs and its domain structures, as well as for designing of nano-sized spintronic devices which require hard ferromagnetic behavior with perpendicular easy axes. This work was supported by the National Science Foundation Grant DMR1400432.

  9. Influence of the dipole interaction on the direction of the magnetization in thin ferromagnetic films

    NASA Astrophysics Data System (ADS)

    Moschel, A.; Usadel, K. D.

    1994-11-01

    The magnetization of thin films depends in a very sensitive way on surface anisotropy fields which often favor a perpendicular orientation and on the dipole interaction which favors an in-plane magnetization. A temperature driven transition from one to the other orientation has been observed experimentally. In order to understand this behavior theoretically we performed detailed calculations of the magnetization of very thin films (thickness of up to 5 layers) within a quantum mechanical mean field approach. A surface anisotropy that favors a perpendicular orientation and a long range dipole interaction were taken into account. It is shown that these competing interactions for certain values of the parameters may result in a temperature driven switching transition from an out-of plane to an in-plane ordered state. Varying the strength of the dipole interaction we found that the switching temperature is a very sensitive function of the ratio of these two competing interactions. A perpendicular ground state magnetization of the firm is only found for values of the surface anisotropy which are larger than a critical surface anisotropy value. The reorientation of the magnetization vector has its physical origin in an entropy increase of the system when going from a perpendicular to an in-plan ordered state.

  10. The Effect of Rotating a Faraday Disc Perpendicular to an Applied Magnetic Field Theory and Experiment

    NASA Technical Reports Server (NTRS)

    Mazuruk, Konstantin; Grugel, Richard N.

    2003-01-01

    A magnetohydrodynamic model that examines the effect of rotating an electrically conducting cylinder with a uniform external magnetic field applied orthogonal to its axis is presented. Noting a simple geometry, it can be classified as a fundamental dynamo problem. For the case of an infinitely long cylinder, an analytical solution is obtained and analyzed in detail. A semi-analytical model was developed that considers a finite cylinder. Experimental data from a spinning brass wheel in the presence of Earth's magnetic field were compared to the proposed theory and found to fit well.

  11. Instability analysis of spin-torque oscillator with an in-plane magnetized free layer and a perpendicularly magnetized pinned layer

    NASA Astrophysics Data System (ADS)

    Taniguchi, Tomohiro; Kubota, Hitoshi

    2016-05-01

    We study the theoretical conditions to excite a stable self-oscillation in a spin-torque oscillator with an in-plane magnetized free layer and a perpendicularly magnetized pinned layer in the presence of magnetic field pointing in an arbitrary direction. The linearized Landau-Lifshitz-Gilbert (LLG) equation is found to be inapplicable to evaluate the threshold between the stable and self-oscillation states because the critical current density estimated from the linearized equation is considerably larger than that found in the numerical simulation. We derive a theoretical formula of the threshold current density by focusing on the energy gain of the magnetization from the spin torque during a time shorter than a precession period. A good agreement between the derived formula and the numerical simulation is obtained. The condition to stabilize the out-of-plane self-oscillation above the threshold is also discussed.

  12. SU-E-J-38: Comparison of 6MV Photon Dose in a Perpendicular and Parallel Magnetic Field

    SciTech Connect

    Ghila, A; Fallone, B; Rathee, S

    2014-06-01

    Purpose: Integrating a linac with an MRI system would allow for real time tumour tracking however the patient will be irradiated in the presence of a magnetic field. The present study experimentally investigates the magnetic field effects on entrance, exit, and interface dose for both transverse and parallel magnetic fields. Methods: Polystyrene was used to construct a set of phantoms for Gafchromic film measurements. One phantom had an adjustable air gap and four other phantoms had one surface at various angles. The linac-MR prototype consisting of a biplanar permanent magnet coupled to a linac was used for the transverse magnetic field measurements. A couple of solenoid electromagnets, stacked on top of each other and irradiated along their bore, were used for the parallel field measurements. Results: All doses are relative to no magnetic field. The transverse magnetic field reduced the entrance dose for all surface angles by strongly deflecting the contaminant electrons. The exit dose in a transverse magnetic field was found to be significantly higher. The entrance dose with a parallel magnetic field present is higher due to the contaminant electrons being concentrated within the beam area. The air gap phantom measurements, done in a transverse magnetic field, show a significant increase of the dose at the proximal side of the air gap and a decrease at the distal side. The measurements, done in the parallel magnetic field, show the concentration of secondary electrons in the air gap. Conclusion: The radiation dose measurements of a 6MV beam in a parallel and transverse magnetic field presented here are currently being replicated using Monte Carlo simulations. This verified Monte Carlo system could provide the dose calculation basis for future linac-MR systems.

  13. Finite-temperature corrections to the time-domain equations of motion for perpendicular propagation in nonuniform magnetized plasmas

    SciTech Connect

    Tierens, W.; De Zutter, D.

    2012-11-15

    In this paper we extend the new techniques of W. Tierens and D. D. Zutter, J. Comput. Phys. 231, 5144 (2012) to include finite Larmor radius effects up to second order in the Larmor radius. We limit ourselves to the case of propagation perpendicular to the background magnetic field B(vector sign){sub 0}. We show that our time-domain technique is able to produce the lowest-order Bernstein wave (a wave believed to be useful for heating fusion devices [H. P. Laqua, Plasma Phys. Controlled Fusion 49, R1 (2007)]). The discrete equations retain many of the favourable properties described in W. Tierens and D. D. Zutter, J. Comput. Phys. 231, 5144 (2012), i.e., unconditional stability and a straightforward relation between the second-order accurate continuous dispersion relation and the dispersion relation of the discretized problem. The theory is illustrated by a place-independent and a place-dependent temperature numerical example.

  14. Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo|CoFeB|MgO structures

    SciTech Connect

    Li, Xiang Yu, Guoqiang; Wong, Kin; Upadhyaya, Pramey; Akyol, Mustafa; Wang, Kang L.; Wu, Hao; Han, Xiufeng; Ong, P. V.; Kioussis, Nicholas; Hu, Qi; Ebrahimi, Farbod; Khalili Amiri, Pedram

    2015-10-05

    We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in annealed Mo|CoFeB|MgO layered structures. The interfacial perpendicular magnetic anisotropy (PMA) is observed to increase with annealing over the studied temperature range, and a VCMA coefficient of about 40 fJ/V-m is sustained after annealing at temperatures as high as 430 °C. Ab initio electronic structure calculations of interfacial PMA as a function of strain further show that strain relaxation may lead to the increase of interfacial PMA at higher annealing temperatures. Measurements also show that there is no significant VCMA and interfacial PMA dependence on the CoFeB thickness over the studied range, which illustrates the interfacial origin of the anisotropy and its voltage dependence, i.e., the VCMA effect. The high thermal annealing stability of Mo|CoFeB|MgO structures makes them compatible with advanced CMOS back-end-of-line processes, and will be important for integration of magnetoelectric random access memory into on-chip embedded applications.

  15. Magnetic and Structural Properties of Ultra-Thin Cobalt Films

    NASA Astrophysics Data System (ADS)

    Wiedmann, Michael Helmut

    In situ polar Kerr effect measurements have been used to study the magnetic anisotropy of Au(111)/Co/X, Pd(111)/Co/X, Cu(111)/Co/X, and Pd(100)/Co/X sandwiches, where X is the nonmagnetic metal Ag, Au, Cu, Ir, and Pd or the insulator MgO. The films were grown by molecular beam epitaxy (MBE). For the metals, we found that the magnitude of the Co/X perpendicular interface anisotropy is strongly peaked at ~1 atomic layer (1.5-2.5 A) coverage. To investigate structural influences on the anisotropy, we have used reflection high energy diffraction (RHEED) and low energy electron diffraction (LEED) to measure changes resulting from overlayer coverage. Analysis of digitized RHEED images captured every ~ 1 A during metal overlayer coverage shows no abrupt change of the in-plane lattice constant. We have also investigated the out-of-plane lattice spacing as a function of nonmagnetic metal coverage by measuring LEED I-V curves along the (0,0) rod. In the case of Cu, where the LEED behavior is nearly kinematic, we see no evidence of any abrupt structural changes at ~1 atomic layer coverage. These results suggest the observed peak in magnetic anisotropy is not structural in origin. The influence of an insulating overlayer, MgO, on the perpendicular magnetic properties was also investigated.

  16. The Effect of Large Scale Magnetic Turbulence on the Acceleration of Electrons by Perpendicular Collisionless Shocks

    NASA Astrophysics Data System (ADS)

    Guo, F.; Giacalone, J.

    2009-12-01

    We investigate electron acceleration at collisionless shocks propagating into an upstream plasma containing large-scale magnetic fluctuations in the direction normal to the mean field. We treat electrons as test particles, and integrate their trajectories numerically, in a time dependent electromagnetic field which is determined from a two-dimensional hybrid (kinetic ions, fluid electron) simulation. We find the large-scale magnetic fluctuations effect the electrons in a number of ways leading to efficient and rapid energization at the shock front. Since the electrons move freely along the magnetic field lines, the large scale field line meandering allows the fast-moving electrons to cross the shock front multiple times, leading to efficient acceleration. Ripples in the shock front occurring at various scales will also contribute to the acceleration by mirroring electrons back and forth between them. The downstream spectrum is broadened, with a power-law like tail at high energies up to 200-300 times of the original energy. It is also shown that the spatial distribution of energetic electrons appears to be similar to in-situ observations (e.g. Bale 1999; Simnett 2005). The study may be important in understanding observations of energetic electrons in planetary bow shocks and interplanetary shocks, and explaining herringbone structures in type II solar radio bursts.

  17. Amplitude Dependence of the Lateral-Vibration Wear Test for Perpendicular Recording Magnetic Disks Treated by Heat Curing

    NASA Astrophysics Data System (ADS)

    Miyake, Shojiro; Wakatsuki, Yukihiko; Wang, Mei; Matsunuma, Satoshi

    2005-05-01

    The tribological characteristics of perfluoropolyether (PFPE) and heat-treated PFPE lubricant films deposited on magnetic thin diamond-like carbon (DLC) film-coated disks by dip coating were studied using lateral modulation frictional force microscopy (LM-FFM). The topography and microstructural properties of the DLC film disk before PFPE lubricant dip coating were investigated by transmission electron microscopy (TEM) and atomic force microscopy (AFM) in the dynamic force modulation (DFM) and frictional force modulation (FFM) modes. The TEM and AFM images show valleys and fine spaces formed between grain boundaries. It is possible that free lubricants reserved in these valleys and spaces during dip coating replenished the surface as a result of tip sliding. In wear tests, the friction properties of the PFPE-DLC disk without heat curing were improved due to the supply of lubricant.

  18. Modification of structure and magnetic anisotropy of epitaxial CoFe₂O₄ films by hydrogen reduction

    SciTech Connect

    Chen, Aiping; Poudyal, Narayan; Xiong, Jie; Liu, J. Ping; Jia, Quanxi

    2015-03-16

    Heteroepitaxial CoFe₂O₄ (CFO) thin films with different thicknesses were deposited on MgO (001) substrates. The as-deposited CFO films show a clear switching of magnetic anisotropy with increasing film thickness. The thinner films (<100 nm) show a perpendicular magnetic anisotropy due to the out-of-plane compressive strain. The thicker films exhibit an in-plane easy axis owing to the dominating shape anisotropy effect. The magnetostriction coefficient of CFO films is estimated to be λ[001] =-188 × 10⁻⁶. Metallic CoFe₂ films were obtained by annealing the as-deposited CFO films in forming gas (Ar 93% + H₂ 7%) at 450 °C. XRD shows that CoFe₂ films are textured out-of-plane and aligned in-plane, owing to lattice matching between CoFe₂ and MgO substrate. TEM results indicate that as-deposited films are continuous while the annealed films exhibit a nanopore mushroom structure. The magnetic anisotropy of CoFe₂ films is dominated by the shape effect. The results demonstrate that hydrogen reduction can be effectively used to modify microstructures and physical properties of complex metal oxide materials.

  19. Modification of structure and magnetic anisotropy of epitaxial CoFe₂O₄ films by hydrogen reduction

    DOE PAGESBeta

    Chen, Aiping; Poudyal, Narayan; Xiong, Jie; Liu, J. Ping; Jia, Quanxi

    2015-03-16

    Heteroepitaxial CoFe₂O₄ (CFO) thin films with different thicknesses were deposited on MgO (001) substrates. The as-deposited CFO films show a clear switching of magnetic anisotropy with increasing film thickness. The thinner films (<100 nm) show a perpendicular magnetic anisotropy due to the out-of-plane compressive strain. The thicker films exhibit an in-plane easy axis owing to the dominating shape anisotropy effect. The magnetostriction coefficient of CFO films is estimated to be λ[001] =-188 × 10⁻⁶. Metallic CoFe₂ films were obtained by annealing the as-deposited CFO films in forming gas (Ar 93% + H₂ 7%) at 450 °C. XRD shows that CoFe₂more » films are textured out-of-plane and aligned in-plane, owing to lattice matching between CoFe₂ and MgO substrate. TEM results indicate that as-deposited films are continuous while the annealed films exhibit a nanopore mushroom structure. The magnetic anisotropy of CoFe₂ films is dominated by the shape effect. The results demonstrate that hydrogen reduction can be effectively used to modify microstructures and physical properties of complex metal oxide materials.« less

  20. Uniaxial magnetic anisotropy induced low field anomalous anisotropic magnetoresistance in manganite thin films

    NASA Astrophysics Data System (ADS)

    Liao, Zhaoliang; Huijben, Mark; Koster, Gertjan; Rijnders, Guus

    2014-09-01

    La2/3Sr1/3MnO3 films with uniaxial magnetic anisotropy were coherently grown on NdGaO3 (110) substrates. The uniaxial anisotropy has strong effect on magnetoresistance (MR). A positive MR was observed when the current is along magnetic easy axis under the current-field perpendicular geometry. In contrast, no positive MR is observed when current is along the magnetic hard axis regardless of the field direction. Our analysis indicates that the anomalous anisotropic MR effect arises from the uniaxial magnetic anisotropy caused stripe domains which contribute to strong anisotropic domain wall resistivity.

  1. Large electric-field control of perpendicular magnetic anisotropy in strained [Co/Ni] / PZT heterostructures

    NASA Astrophysics Data System (ADS)

    Gopman, Daniel; Dennis, Cindi; Chen, P. J.; Iunin, Yury; Shull, Robert

    We present a piezoelectric/ferromagnetic heterostructure with PMA - a Co/Ni multilayer sputtered directly onto a Pb(Zr,Ti)O3 (PZT) substrate. Chemical-mechanical polishing was used to reduce the roughness of PZT plates to below 2 nm rms, enabling optimal magnetoelectric coupling via the direct interface between PZT and sputtered Co/Ni films with large PMA (Keff = (95 +/-9 kJ/m3)) . We grew the following layer stack: Ta(3)/Pt(2)/[Co(0.15)/Ni(0.6)]x4/Co(0.15)/Pt(2)/Ta(3); numbers in parentheses indicate thicknesses in nm. Applied electric fields up to +/- 2 MV/m to the PZT generated 0.05% in-plane compression in the Co/Ni multilayer, enabling a large electric-field reduction of the PMA (ΔKeff >= 103 J/m3) and of the coercive field (35%). Our results demonstrate that: (i) heterostructures combining PZT and [Co/Ni] exhibit larger PMA (Keff ~105 J/m3) than previous magnetoelectric heterostructures based on Co/Pt and CoFeB, enabling thermally stable hybrid magnetoelectric/spintronic devices only tens of nm in diameter and (ii) electric-field control of the PMA is promising for more energy efficient switching of spintronic devices.

  2. Determination of the spin torque non-adiabaticity in perpendicularly magnetized nanowires.

    PubMed

    Heinen, J; Hinzke, D; Boulle, O; Malinowski, G; Swagten, H J M; Koopmans, B; Ulysse, C; Faini, G; Ocker, B; Wrona, J; Kläui, M

    2012-01-18

    Novel nanofabrication methods and the discovery of an efficient manipulation of local magnetization based on spin polarized currents has generated a tremendous interest in the field of spintronics. The search for materials allowing for fast domain wall dynamics requires fundamental research into the effects involved (Oersted fields, adiabatic and non-adiabatic spin torque, Joule heating) and possibilities for a quantitative comparison. Theoretical descriptions reveal a material and geometry dependence of the non-adiabaticity factor β, which governs the domain wall velocity. Here, we present two independent approaches for determining β: (i) measuring the dependence of the dwell times for which a domain wall stays in a metastable pinning state on the injected current and (ii) the current-field equivalence approach. The comparison of the deduced β values highlights the problems of using one-dimensional models to describe two-dimensional dynamics and allows us to ascertain the reliability, robustness and limits of the approaches used. PMID:22172802

  3. Photoconductivity in AC-driven modulated two-dimensional electron gas in a perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Torres, Manuel; Kunold, Alejandro

    2006-04-01

    In this work we study the microwave photoconductivity of a two-dimensional electron system (2DES) in the presence of a magnetic field and a two-dimensional modulation (2D). The model includes the microwave and Landau contributions in a non-perturbative exact way; the periodic potential is treated perturbatively. The Landau-Floquet states provide a convenient base with respect to which the lattice potential becomes time dependent, inducing transitions between the Landau-Floquet levels. Based on this formalism, we provide a Kubo-like formula that takes into account the oscillatory Floquet structure of the problem. The total longitudinal conductivity and resistivity exhibit strong oscillations, determined by epsi = ω/ωc, with ω the radiation frequency and ωc the cyclotron frequency. The oscillations follow a pattern with minima centred at \\omega /\\omega_{\\mathrm {c}}=j+\\frac {1}{2} (l-1)+\\delta , and maxima centred at \\omega /\\omega_{\\mathrm {c}}=j+\\frac {1}{2} (l-1)-\\delta , where j = 1,2,3..., δ~1/5 is a constant shift and l is the dominant multipole contribution. Negative resistance states (NRSs) develop as the electron mobility and the intensity of the microwave power are increased. These NRSs appear in a narrow window region of values of the lattice parameter (a), around a~lB, where lB is the magnetic length. It is proposed that these phenomena may be observed in artificially fabricated arrays of periodic scatterers at the interface of ultraclean GaAs /AlxGa1-xAs heterostructures.

  4. High speed domain wall motion in MgO-based magnetic tunnel junctions driven by perpendicular current injection

    NASA Astrophysics Data System (ADS)

    Metaxas, P. J.; Chanthbouala, A.; Matsumoto, R.; Cros, V.; Anane, A.; Grollier, J.; Fert, A.; Zvezdin, K. A.; Fukushima, A.; Yuasa, S.

    2012-02-01

    The ability to efficiently drive fast domain wall (DW) motion will pave the way for revolutionary new electronic devices ranging from DW-MRAMs to spintronic memristors. The majority of domain wall devices use a lateral, current-in-plane configuration in which critical current densities for domain wall motion remain quite high, typically being on the order of 100 MA/cm^2 with velocities generally limited to about 100 m/s. In this contribution we show that critical current densities can be decreased by up to two orders of magnitude using the current-perpendicular-to-plane geometry. Indeed, we demonstrate that a DW can be propagated back and forth along the free layer of a MgO-based magnetic tunnel junction (MTJ) in the absence of an external magnetic field using current densities that are on the order of 5 MA/cm^2. More notably however, we obtain high domain wall velocities for these low current densities: the MTJ's large resistance variations allow us to carry out time-resolved measurements of the wall motion from which we evidence DW velocities exceeding 500m/s.

  5. How much energy do ULF waves (2-80 mHz) transfer perpendicular to the background magnetic field?

    NASA Astrophysics Data System (ADS)

    Hartinger, M.; Moldwin, M.

    2013-05-01

    The solar wind perturbs the magnetopause, driving fast mode waves which couple to standing Alfven waves via field line resonance (FLR); substorms generate fast mode waves which drive FLR in the inner magnetosphere; ion foreshock processes drive fast mode waves in the dayside magnetosphere which then drive FLR. These example mechanisms for Ultra Low Frequency (ULF) wave energy transfer share one similarity: energy transfer perpendicular to the background magnetic field via the fast mode. The fast mode energy transfer rate is a useful diagnostic tool for determining which mechanisms are most important for different frequencies/regions/external driving conditions. However, there are unique challenges associated with observing the fast mode (when compared to, for example, standing Alfven waves): confinement to locations near the magnetic equatorial plane, weak coupling to the ionosphere in most locations (raising difficulties for direct ground observations), nominally low amplitudes, and brief durations. In this study, we address the first two challenges by using THEMIS spacecraft observations, which are routinely available near the equatorial plane. We address the second two challenges by studying the time-averaged Poynting vector rather than wave amplitude (whereas transient fast mode waves have low amplitudes, they have substantial net energy transfer rates). We consider the 2-80 mHz frequency range, all local time sectors, and radial distances from 4 to 13 Re.

  6. MULTICOMPONENT THEORY OF BUOYANCY INSTABILITIES IN ASTROPHYSICAL PLASMA OBJECTS: THE CASE OF MAGNETIC FIELD PERPENDICULAR TO GRAVITY

    SciTech Connect

    Nekrasov, Anatoly K.; Shadmehri, Mohsen E-mail: mshadmehri@thphys.nuim.i

    2010-12-01

    We develop a general theory of buoyancy instabilities in the electron-ion plasma with the electron heat flux based not upon magnetohydrodynamic (MHD) equations, but using a multicomponent plasma approach in which the momentum equation is solved for each species. We investigate the geometry in which the background magnetic field is perpendicular to the gravity and stratification. General expressions for the perturbed velocities are given without any simplifications. Collisions between electrons and ions are taken into account in the momentum equations in a general form, permitting us to consider both weakly and strongly collisional objects. However, the electron heat flux is assumed to be directed along the magnetic field, which implies a weakly collisional case. Using simplifications justified for an investigation of buoyancy instabilities with electron thermal flux, we derive simple dispersion relations for both collisionless and collisional cases for arbitrary directions of the wave vector. Our dispersion relations considerably differ from that obtained in the MHD framework and conditions of instability are similar to Schwarzschild's criterion. This difference is connected with simplified assumptions used in the MHD analysis of buoyancy instabilities and with the role of the longitudinal electric field perturbation which is not captured by the ideal MHD equations. The results obtained can be applied to clusters of galaxies and other astrophysical objects.

  7. Two-dimensional cavity polaritons under the influence of the perpendicular strong magnetic and electric fields. The gyrotropy effects

    NASA Astrophysics Data System (ADS)

    Moskalenko, S. A.; Podlesny, I. V.; Dumanov, E. V.; Liberman, M. A.

    2015-11-01

    The properties of the two-dimensional cavity polaritons subjected to the action of a strong perpendicular magnetic and electric fields, giving rise to the Landau quantization (LQ) of the 2D electrons and holes accompanied by the Rashba spin-orbit coupling, by the Zeeman splitting and by the nonparabolicity of the heavy-hole dispersion law are investigated. We use the method proposed by Rashba (1960) [1] and the obtained results are based on the exact solutions for the eigenfunctions and for the eigenvalues of the Pauli-type Hamilonians with third order chirality terms and nonparabolic dispersion law for heavy-holes and with the first order chirality terms for electrons. The selection rules of the band-to-band optical quantum transitions as well as of the quantum transitions from the ground state of the crystal to the magnetoexciton states depend essentially on the numbers ne and nh of the LQ levels of the (e-h) pair forming the magnetoexciton. It is shown that the Rabi frequency ΩR of the polariton branches and the magnetoexciton oscillator strength fosc increase with the magnetic field strength B as ΩR √{ B }, and fosc B. The optical gyrotropy effects may be revealed changing the sign of the photon circular polarization at a given sign of the wave vector longitudinal projection kz or equivalently changing the sign of kz at the same selected circular polarization.

  8. Edge magnetism of finite graphene-like nanoribbons in the presence of intrinsic spin-orbit interaction and perpendicular electric field.

    PubMed

    Krompiewski, S

    2016-08-01

    This paper elucidates the combined effect of intrinsic spin-orbit interaction (ISOI) and perpendicular electric field [Formula: see text] on edge states in finite graphene-like nanoribbons. It is shown that the ISOI generates magnetic anisotropy which makes the in-plane edge magnetization configuration more energetically stable than the commonly studied out-of-plane one. The anisotropy less severely suppresses the former configuration than the latter. As concerns the E z effect, the following evolution of electric transport properties is predicted: magnetic insulator, non-magnetic narrow-band semiconductor, and finally non-magnetic band insulator.

  9. Edge magnetism of finite graphene-like nanoribbons in the presence of intrinsic spin–orbit interaction and perpendicular electric field

    NASA Astrophysics Data System (ADS)

    Krompiewski, S.

    2016-08-01

    This paper elucidates the combined effect of intrinsic spin–orbit interaction (ISOI) and perpendicular electric field ({E}z) on edge states in finite graphene-like nanoribbons. It is shown that the ISOI generates magnetic anisotropy which makes the in-plane edge magnetization configuration more energetically stable than the commonly studied out-of-plane one. The anisotropy less severely suppresses the former configuration than the latter. As concerns the E z effect, the following evolution of electric transport properties is predicted: magnetic insulator, non-magnetic narrow-band semiconductor, and finally non-magnetic band insulator.

  10. Edge magnetism of finite graphene-like nanoribbons in the presence of intrinsic spin-orbit interaction and perpendicular electric field

    NASA Astrophysics Data System (ADS)

    Krompiewski, S.

    2016-08-01

    This paper elucidates the combined effect of intrinsic spin-orbit interaction (ISOI) and perpendicular electric field ({E}z) on edge states in finite graphene-like nanoribbons. It is shown that the ISOI generates magnetic anisotropy which makes the in-plane edge magnetization configuration more energetically stable than the commonly studied out-of-plane one. The anisotropy less severely suppresses the former configuration than the latter. As concerns the E z effect, the following evolution of electric transport properties is predicted: magnetic insulator, non-magnetic narrow-band semiconductor, and finally non-magnetic band insulator.

  11. Comment on ``Size-dependent scaling of perpendicular exchange bias in magnetic nanostructures''

    NASA Astrophysics Data System (ADS)

    Baltz, V.; Bollero, A.; Rodmacq, B.; Dieny, B.; Sort, J.

    2008-01-01

    From results at one given temperature (300K) , Malinowski [Phys. Rev. B 75, 012413 (2007)] draw the conclusion that lateral confinement of ferromagnetic-antiferromagnetic exchange-biased structures does not enhance thermally activated unpinning of the antiferromagnetic spins, which would thus contrast with a recent report [Phys. Rev. Lett. 94, 117201 (2005)], as explicitly mentioned in their manuscript. In this Comment, we discuss why such a conclusion might need revision above a “crossover temperature,” as evidenced in the literature. The value of such a crossover temperature certainly depends on the magnetic parameters of each system studied, e.g., anisotropy and exchange stiffness. From the above reasons, and contrary to the statement of Malinowski , we rather think that their results might well agree with the report to which they refer to. In our Comment we notably aim at complementing the conclusion of Malinowski by explaining why some differences between the two studies are observed at one given temperature, and why it might be expected to observe similar trends over a whole range of temperatures.

  12. A DIRECT APPROACH FOR DETERMINING THE PERPENDICULAR MEAN FREE PATH OF SOLAR ENERGETIC PARTICLES IN A TURBULENT AND SPATIALLY VARYING MAGNETIC FIELD

    SciTech Connect

    He, H.-Q.; Wan, W. E-mail: wanw@mail.iggcas.ac.cn

    2012-12-15

    A direct approach for explicitly determining the perpendicular mean free path of solar energetic particles (SEPs) influenced by parallel diffusion and composite dynamical turbulence in a spatially varying magnetic field is presented. As theoretical applications of the direct approach, we investigate the inherent relations between the perpendicular mean free path and various parameters concerning physical properties of SEPs as well as those of interplanetary conditions such as the solar wind and the turbulent magnetic field. Comparisons of the perpendicular mean free paths with and without adiabatic focusing are also presented. The direct method shows encouraging agreement with spacecraft observations, suggesting it is a reliable and useful tool for use in theoretical investigations and space weather forecasting.

  13. The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

    PubMed

    Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

    2014-11-01

    Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise. PMID:25958585

  14. Composite elastic magnet films with hard magnetic feature

    NASA Astrophysics Data System (ADS)

    Wang, Weisong; Yao, Zhongmei; Chen, Jackie C.; Fang, Ji

    2004-10-01

    Hard magnetic materials with high remnant magnetic moment, Mr, have unique advantages that can achieve bi-directional (push-pull) movement in an external magnetic field. This paper presents the results on the fabrication and testing of novel composite elastic permanent magnet films. The microsize hard barium ferrite powder, NdFeB powder, and different silicone elastomers have been used to fabricate various large elongation hard magnetic films. Three different fabrication methods, screen-coating processing, moulding processing and squeegee-coating processing, have been investigated, and the squeegee-coating process was proven to be the most successful method. The uniform composite elastic permanent magnet films range from 40 µm to 216 µm in thickness have been successfully fabricated. These films were then magnetized in the thickness direction after fabrication. They exhibited permanent magnet behaviour; for instance, the film (0.640 mm3 in volume) made of polydimethyl siloxane (PDMS) and hard barium ferrite powders is measured to give a coercive force, Hc, of 3.24 × 105 A m-1 and Mr of 1.023 × 10-5 A m2, and the film (0.504 mm3 in volume) made of PDMS and NdFeB powders gives 1.55 × 105 A m-1 Hc and 8.081 × 10-5 A m2 Mr. These composite elastic permanent magnet films' mechanical properties, like Young's modulus and deflection force, have been evaluated. To validate the films' Young's modulus, a finite-element computer simulation (ANSYS®) is used and one film is chosen whose Young's modulus (16.60 MPa) is confirmed by the simulation results with ANSYS®. The large elongation composite elastic permanent magnet film provides an excellent diaphragm material, which plays an important role in the micropump or valve. The movement of the 126 µm thick film with 4.5 mm diameter made of PDMS and NdFeB powders has been tested in a 0.21 Tesla external magnetic field. It was proven to have large deflection of 125 µm.

  15. Strain engineering of magnetic anisotropy: The epitaxial growth of cobalt-manganese-gallium Heusler alloy films on III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Carr, David Michael

    This research is the first step towards manipulating thin film magnetic anisotropy through control of uniform epitaxial strain. Pseudomorphic Co 2MnGa films with thicknesses of 300 A have been grown on several III-V semiconductors to generate coherently-strained epitaxial films. Growth of Co2MnGa films at 200°C both directly on GaAs substrates and on thermodynamically stable Sc0.3Er0.7As interlayers resulted in similar physical and magnetic properties. The epitaxial strain generated an induced perpendicular anisotropy and magnetic stripe domains. This resulted in a reduced in-plane remnant magnetization, high coercivity, and a relatively low saturation field for the out-of-plane magnetization. For higher temperature growths, the interlayer was required to minimize interfacial reactions and maintain the magnetic properties of the films. When the growth temperature on the Sc0.3Er0.7As interlayers was increased from 0 to 400°C, the subsequent films had improved L21 atomic ordering, decreased out-of-plane lattice parameters, and enhanced strain-induced perpendicular anisotropy. Dramatic variations in the magnetic anisotropy were observed for films grown on different III-V semiconductors due to controlled strain-induced perpendicular anisotropy. For Co2MnGa films grown under tension on InP, the magnetization barely saturated out-of-plane with a field of 1.75 Tesla. These films displayed clear in-plane anisotropy and low coercivity switching. For films grown under compression on GaAs, the magnetization easily saturated out-of-plane with a field of a few thousand Oe. These films displayed no in-plane anisotropy in the hysteresis loops and had large coercivities. For comparison, bulk-like unstrained Co2MnGa films were grown on relaxed ErAs interlayers on InAs. These films displayed properties intermediate between films grown on GaAs and InP. Finally, growth of films on GaP resulted in partial relaxation, thereby reducing the induced perpendicular anisotropy and verifying

  16. Enhanced heat conductivity in stochastic magnetic field of tokomak affected by the ratio of the parallel to the perpendicular heat diffusivity

    NASA Astrophysics Data System (ADS)

    Gao, H.

    2012-11-01

    Electron heat transport across stochastic magnetic fields is studied numerically in order to find out how the ratio of the parallel to the perpendicular heat diffusivity affects the enhanced heat conductivity and its radial profile in tokomak plasma physics. To find out the details of profile, non-local stochastic magnetic fields, in which the perturbed magnetic islands are separated with each other but very close to in the minor radius of tokomak, are chosen as research objects in our simulation work. Our numerical results indicate that the ratio of the parallel to the perpendicular heat diffusivity is a very important effective factor, which dominate how far the enhanced conductivity contributed by a perturbed magnetic field approach to zero from the rational surface in minor radius. Besides that, a theoretical analysis was provided and compared with the numerical results in this article.

  17. Fabrication of scrolled magnetic thin film patterns

    NASA Astrophysics Data System (ADS)

    Min, Seonggi; Lim, Jin-Hee; Gaffney, John; Kinttle, Kristofer; Wiley, John B.; Malkinski, Leszek

    2012-04-01

    Magnetic film scrolls have been fabricated via a deterministic release of rectangular patterns of bimetallic Ti (20 nm)/Ni (20 , 30 or 40 nm) films from a sacrificial Cu underlayer. The diameter of the scrolls varied from 2.64 μm to 4.28 μm with increasing thickness of the Ni layer from 20 to 40 nm. This behavior was found to be consistent with the model of bilayered film with interfacial strain between the Ti and Ni layers of about Δɛ = 0.01. Changing the geometry of the patterns from flat patterns to scrolls led to changes in their magnetic properties.

  18. Noncircular skyrmion and its anisotropic response in thin films of chiral magnets under a tilted magnetic field

    DOE PAGESBeta

    Lin, Shi-Zeng; Saxena, Avadh

    2015-11-03

    Here we study the equilibrium and dynamical properties of skyrmions in thin films of chiral magnets with oblique magnetic field. The shape of an individual skyrmion is non-circular and the skyrmion density decreases with the tilt angle from the normal of films. As a result, the interaction between two skyrmions depends on the relative angle between them in addition to their separation. The triangular lattice of skyrmions under a perpendicular magnetic field is distorted into a centered rectangular lattice for a tilted magnetic field. For a low skyrmion density, skyrmions form a chain like structure. Lastly, the dynamical response ofmore » the non-circular skyrmions depends on the direction of external currents.« less

  19. Noncircular skyrmion and its anisotropic response in thin films of chiral magnets under a tilted magnetic field

    SciTech Connect

    Lin, Shi-Zeng; Saxena, Avadh

    2015-11-03

    Here we study the equilibrium and dynamical properties of skyrmions in thin films of chiral magnets with oblique magnetic field. The shape of an individual skyrmion is non-circular and the skyrmion density decreases with the tilt angle from the normal of films. As a result, the interaction between two skyrmions depends on the relative angle between them in addition to their separation. The triangular lattice of skyrmions under a perpendicular magnetic field is distorted into a centered rectangular lattice for a tilted magnetic field. For a low skyrmion density, skyrmions form a chain like structure. Lastly, the dynamical response of the non-circular skyrmions depends on the direction of external currents.

  20. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    SciTech Connect

    Thomas, Luc Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang

    2014-05-07

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 k{sub B}T/μA, energy barriers higher than 100 k{sub B}T at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  1. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    NASA Astrophysics Data System (ADS)

    Thomas, Luc; Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang

    2014-05-01

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 kBT/μA, energy barriers higher than 100 kBT at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  2. Magnetic linear dichroism of photoemission from ultrathin manganese films on silicon

    NASA Astrophysics Data System (ADS)

    Gomoyunova, M. V.; Grebenyuk, G. S.; Pronin, I. I.; Senkovskiy, B. V.

    2015-09-01

    The magnetic linear dichroism (MLD) effect in photoemission of Mn 3 p electrons was used to study magnetic properties of Mn films (to 2.5 nm thick) grown on the Si(111)-(7 × 7) surface at room temperature and manganese silicide films grown by solid-phase epitaxy. The experiments were performed using linearly polarized light with a photon energy of 130 eV, incident at an angle of 30° to the sample surface. Photoelectron spectra were measured in a narrow solid angle focused along the normal to the surface for two opposite sample magnetization directions in the surface plane, perpendicular to the polarization vector of the light wave. It was shown that the MLD effect characteristic of films with high-temperature ferromagnetism appears after depositing ˜2 nm Mn. The formation of manganese silicides upon annealings of the sample with deposited 2.5 nm Mn results in the disappearance of the MLD effect.

  3. Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS)

    NASA Astrophysics Data System (ADS)

    Kurt, Huseyin

    2005-08-01

    We present two CPP-MR studies of spin-valves based upon ferromagnetic/nonmagnetic/ferromagnetic (F/N/F) trilayers. We measure the spin-diffusion lengths of N = Pd, Pt, and Au at 4.2K, and both the specific resistances (sample area A times resistance R) and spin-memory-loss of N/Cu interfaces. Pd, Pt and Au are of special device interest because they give perpendicular anisotropy when sandwiching very thin Co layers. Comparing our spin-memory-loss data at Pd/Cu and Pt/Cu interfaces with older data for Nb/Cu and W/Cu gives insight into the importance of spin-orbit coupling in producing such loss. We reproduce and extend prior studies by Eid of 'magnetic activity' at the interface of Co and N-metals (or combinations of N-metals), when the other side of the N-metal contacts a superconductor (S). Our data suggest that magnetic activity may require strong spin-flipping at the N/S interface. We present five studies of a new phenomenon, CIMS, in F1/N/F2 trilayers, with F1 a thick 'polarizing' layer and F2 a thin 'switching' layer. In all prior studies of CIMS, positive current caused the magnetization of F2 to switch from parallel (P) to anti-parallel (AP) to that of F1- 'normal' switching. By judicious addition of impurities to F-metals, we are able to controllably produce both 'normal' and 'inverse' switching- where positive current switches the magnetization of F2 from AP to P to that of F1. In the samples studied, whether the switching is normal or inverse is set by the 'net polarization' produced by F1 and is independent of the properties of F2. As scattering in the bulk of F1 and F2 is essential to producing our results, these results cannot be described by ballistic models, which allow scattering only at interfaces. Most CIMS experiments use Cu as the N-layer due to its low resistivity and long spin-diffusion length. We show that Ag and Au have low enough resistivities and long enough spin-diffusion lengths to be useful alternatives to Cu for some devices. While

  4. Co2MnSi Heusler alloy as an enhancing layer of perpendicular magnetic anisotropy for MgO-based magnetic tunnel junctions with L10 ordered FePd

    NASA Astrophysics Data System (ADS)

    Bae, Taejin; Ko, Jungho; Lee, Sangho; Cha, Jongin; Hong, Jongill

    2016-01-01

    Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0 nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.

  5. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

    SciTech Connect

    Zhu, M. Chong, H.; Vu, Q. B.; Vo, T.; Brooks, R.; Stamper, H.; Bennett, S.; Piccirillo, J.

    2015-05-25

    We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.

  6. A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

    NASA Astrophysics Data System (ADS)

    Zhu, M.; Chong, H.; Vu, Q. B.; Vo, T.; Brooks, R.; Stamper, H.; Bennett, S.; Piccirillo, J.

    2015-05-01

    We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt)n or (Co/Pd)n multilayer pinning.

  7. Temperature dependence of the perpendicular magnetic anisotropy in Ta/Co2FeAl/MgO structures probed by Anomalous Hall Effect

    NASA Astrophysics Data System (ADS)

    Gabor, M. S.; Petrisor, T.; Pop, O.; Colis, S.; Tiusan, C.

    2015-10-01

    We report a detailed study of the temperature dependence of the magnetic anisotropy in Ta/Co2FeAl/MgO structures by means of Anomalous Hall Effect measurements. The volume magnetic anisotropy, although negligible at room temperature, shows a non-negligible value at low temperatures and favors an in-plane easy magnetization axis. The surface magnetic anisotropy, which promotes the perpendicular magnetic easy axis, shows an increase from 0.76 ± 0.05 erg /cm2 at 300 K, up to 1.08 ± 0.04 erg /cm2 at 5 K, attributed to the evolution of the Co2FeAl layer saturation magnetization with temperature.

  8. Electrodeposited Co-Pt thin films for magnetic hard disks

    NASA Astrophysics Data System (ADS)

    Bozzini, B.; De Vita, D.; Sportoletti, A.; Zangari, G.; Cavallotti, P. L.; Terrenzio, E.

    1993-03-01

    ew baths for Co-Pt electrodeposition have been developed and developed and ECD thin films (≤0.3μm) have been prepared and characterized structurally (XRD), morphologically (SEM), chemically (EDS) and magnetically (VSM); their improved corrosion, oxidation and wear resistance have been ascertained. Such alloys appear suitable candidates for magnetic storage systems, from all technological viewpoints. The originally formulated baths contain Co-NH 3-citrate complexes and Pt-p salt (Pt(NH 3) 2(NO 2) 2). Co-Pt thin films of fcc structure are deposited obtaining microcrystallites of definite composition. At Pt ⋍ 30 at% we obtain fcc films with a=0.369 nm, HC=80 kA m, and high squareness; increasing Co and decreasing Pt content in the bath it is possible to reduce the Pt content of the deposit, obtaining fcc structures containing two types of microcrystals with a = 0.3615 nm and a = 0.369 nm deposited simultaneously. NaH 2PO 2 additions to the bath have a stabilizing influence on the fcc structure of a = 0.3615 nm, Pt ⋍ 20 at% and HC as high as 200 kA/m, with hysteresis loops suitable for both longitudinal or perpendicular recording, depending on the thickness. We have prepared 2.5 in. hard disks for magnetic recording with ECD Co-Pt 20 at% with a polished and texturized ACD Ni-P underlayer. Pulse response, 1F & 2F frequency and frequency sweep response behaviour, as well as noise and overwrite characteristics have been measured for both our disks and high-standard sputtered Co-Cr-Ta production disks, showin improved D50 for Co-Pt ECD disks. The signal-to-noise ratio could be improved by pulse electrodeposition and etching post-treatments.

  9. Dynamic Characterization of Thin Film Magnetic Materials

    NASA Astrophysics Data System (ADS)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  10. Abrupt transition from ferromagnetic to antiferromagnetic of interfacial exchange in perpendicularly magnetized L1(0)-MnGa/FeCo tuned by Fermi level position.

    PubMed

    Ma, Q L; Mizukami, S; Kubota, T; Zhang, X M; Ando, Y; Miyazaki, T

    2014-04-18

    An abrupt transition of the interfacial exchange coupling from ferromagnetic to antiferromagnetic was observed in the interface of perpendicularly magnetized L10-MnGa/Fe1-xCox epitaxial bilayers when x was around 25%. By considering the special band structure of the MnGa alloy, we present a model explaining this transition by the spin-polarization reversal of Fe1-xCox alloys due to the rise of the Fermi level as the Co content increases. The effect of interfacial exchange coupling on the coercive force (Hc) and the spin-dependent tunneling effect in perpendicular magnetic tunnel junctions (pMTJs) based on the coupled composite were also studied. Changes from the normal spin valve to inverted magnetoresistance loops corresponding to the coupling transition were observed in pMTJs with MnGa/Fe1-xCox as an electrode. PMID:24785068

  11. Magnetic thin-film split-domain current sensor-recorder

    DOEpatents

    Hsieh, Edmund J.

    1979-01-01

    A sensor-recorder for recording a representation of the direction and peak amplitude of a transient current. A magnetic thin film is coated on a glass substrate under the influence of a magnetic field so that the finished film is magnetically uniaxial and anisotropic. The film is split into two oppositely magnetized contiguous domains with a central boundary by subjecting adjacent portions of the film simultaneously to magnetic fields that are opposed 180.degree.. With the split-domain sensor-recorder placed with the film plane and domain boundary either perpendicular or parallel to the expected conductive path of a transient current, the occurrence of the transient causes switching of a portion of one domain to the direction of the other domain. The amount of the switched domain portion is indicative of the amplitude of the peak current of the transient, while the particular domain that is switched is indicative of the direction of the current. The resulting domain patterns may be read with a passive magnetic tape viewer.

  12. Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

    NASA Astrophysics Data System (ADS)

    Tanaka, Chika; Abe, Keiko; Noguchi, Hiroki; Nomura, Kumiko; Ikegami, Kazutaka; Fujita, Shinobu

    2014-01-01

    In this paper, we present a novel nonvolatile-random access memory (RAM) cell design based on a “normally-off memory architecture” using a perpendicular spin torque transfer-magnetic random access memory (STT-MRAM) based on a four-transistors static random access memory (SRAM) in order to reduce the operating power of mobile processors. After the cell design concept and basic operation are proposed, a stable and reliable operation for read/write is confirmed by circuit simulation.

  13. Magnetic properties of CoFe2O4 thin films prepared by a sol-gel method

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Gwang; Park, Jae Yun; Oh, Young-Jei; Kim, Chul Sung

    1998-09-01

    Thin films with cobalt ferrite layers on thermally oxidized silicon wafers were fabricated by a sol-gel method. Magnetic and structural properties of the films were investigated with an x-ray diffractometer, a vibrating sample magnetometer and atomic force microscopy. The crystallization temperature for Co ferrite thin films was determined by using Mössbauer spectroscopy. Co ferrite films annealed at and above 450 °C have only a single phase spinel structure without any preferred crystallite orientation. Their rms surface roughness is less than 3 nm and the size of grains is about 30 nm for annealing temperatures greater than 650 °C. Films fired at and above 550 °C have moderate saturation magnetization and there is no significant difference of their magnetic properties for external fields applied parallel and perpendicular to their planes. The coercivity shows a strong dependence on the annealing temperature.

  14. Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe 12O 19) film prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2012-04-01

    The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ50) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.

  15. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer.

    PubMed

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-01-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

  16. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

    PubMed Central

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-01-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics. PMID:26672482

  17. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

    2015-12-01

    Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics.

  18. Electrical-field and spin-transfer torque effects in CoFeB/MgO-based perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Yoshida, Chikako; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro; Furuya, Atsushi; Ataka, Tadashi; Tanaka, Tomohiro; Uehara, Yuji

    2016-05-01

    The electric-field (E) dependence of the magnetoresistance (RH) loops for top-pinned perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs) in the presence of a spin-transfer torque (STT)-current was measured. The E effects were distinguished from the STT-current effects using a micromagnetic simulation. The coercive field (Hc) decreased and the RH loop shifted as both the positive and negative bias E increased owing to the STT current. Furthermore, E-assisted switching for an MTJ with a diameter of 20 nm, which exhibited a nearly coherent magnetization reversal, was demonstrated using micromagnetic simulation.

  19. An Alternative Map from a 2 + 1 Dimensional Charged Dirac Oscillator in the Background of a Uniform Perpendicular Magnetic Field to a Quantum Optics Model

    NASA Astrophysics Data System (ADS)

    Hou, Yu-Long; Wang, Qing; Long, Zheng-Wen; Jing, Jian

    2015-05-01

    We propose an alternative map from the the 2-dimensional charged Dirac oscillator in the background of a uniform perpendicular magnetic field onto a quantum optics model which contains both Jaynes-Cummings (JC) and Anti-Jaynes-Cummings (AJC) interactions. Different from previous work, we only introduce one kind of phonons and realize a symmetrical competition which is controlled by the magnetic field. Furthermore, we find that this model behaves as a quantum phase transition when a dimensionless parameter crosses its critical value. Several characteristics of quantum phase transition are exhibited explicitly.

  20. Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

    SciTech Connect

    Chae, Kyo-Suk; Shim, Tae-Hun; Park, Jea-Gun

    2014-07-21

    We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However, the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.

  1. Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

    PubMed Central

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Prejbeanu, Ioan L.; Dieny, Bernard

    2016-01-01

    We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate the evolution of RKKY coupling with Ru spacer thickness in such a storage layer. The coupling becomes antiferromagnetic above 0.5 nm and its strength decreases monotonously with increasing Ru thickness. This contrasts with the behavior of Co-based systems for which a maximum in interlayer coupling is generally observed around 0.8 nm. A thin Ta insertion below the Ru spacer considerably decreases the coupling energy, without basically changing its variation with Ru thickness. After optimization of the non-magnetic and magnetic layer thicknesses, it appears that such a FeCoB/Ru/FeCoB synthetic storage layer sandwiched between MgO barriers can be made stable enough to actually be used as hard reference layer in single or double magnetic tunnel junctions, the storage layer being now a single soft FeCoB layer. Finally, we realize Pt- or Pd-free robust perpendicular magnetic tunnel junctions, still keeping the advantage of a synthetic reference layer in terms of reduction of stray fields at small pillar sizes. PMID:26883933

  2. Magnetic properties on strained manganite thin film

    NASA Astrophysics Data System (ADS)

    Prajapat, C. L.; Singh, M. R.; Gupta, S. K.; Bhattacharya, D.; Basu, S.; Ravikumar, G.

    2014-04-01

    Structural and magnetic studies on La2/3Sr1/3MnO3 (LSMO) epitaxial films grown on STO (100) and MgO (100) substrates by Pulsed Laser Deposition are presented. Due to larger interface strain, the grain size of LSMO on MgO is much smaller than that on STO substrate. However, anisotropy energy produced as a result of in plane tensile strain is much larger in case of the films deposited on MgO in such a way that the blocking (irreversibility) temperature and the coercive fields inferred from temperature and magnetic field dependent magnetization measurements are significantly higher. The importance of this result for the memory applications is highlighted.

  3. Magnetization reversal in ferromagnetic thin films induced by spin-orbit interaction with Slonczewski-like spin transfer torque

    SciTech Connect

    Li, Jia

    2014-10-07

    We theoretically investigate the dynamics of magnetization in ferromagnetic thin films induced by spin-orbit interaction with Slonczewski-like spin transfer torque. We reproduce the experimental results of perpendicular magnetic anisotropy films by micromagnetic simulation. Due to the spin-orbit interaction, the magnetization can be switched by changing the direction of the current with the assistant of magnetic field. By increasing the current amplitude, wider range of switching events can be achieved. Time evolution of magnetization has provided us a clear view of the process, and explained the role of minimum external field. Slonczewski-like spin transfer torque modifies the magnetization when current is present. The magnitude of the minimum external field is determined by the strength of the Slonczewski-like spin transfer torque. The investigations may provide potential applications in magnetic memories.

  4. BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

    SciTech Connect

    Swerts, J. Mertens, S.; Lin, T.; Couet, S.; Tomczak, Y.; Sankaran, K.; Pourtois, G.; Kim, W.; Meersschaut, J.; Souriau, L.; Radisic, D.; Van Elshocht, S.; Kar, G.; Furnemont, A.

    2015-06-29

    Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface of the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.

  5. Modification of structure and magnetic anisotropy of epitaxial CoFe2O4 films by hydrogen reduction

    NASA Astrophysics Data System (ADS)

    Chen, Aiping; Poudyal, Narayan; Xiong, Jie; Liu, J. Ping; Jia, Quanxi

    2015-03-01

    Heteroepitaxial CoFe2O4 (CFO) thin films with different thicknesses were deposited on MgO (001) substrates. The as-deposited CFO films show a clear switching of magnetic anisotropy with increasing film thickness. The thinner films (<100 nm) show a perpendicular magnetic anisotropy due to the out-of-plane compressive strain. The thicker films exhibit an in-plane easy axis owing to the dominating shape anisotropy effect. The magnetostriction coefficient of CFO films is estimated to be λ[001] = -188 × 10-6. Metallic CoFe2 films were obtained by annealing the as-deposited CFO films in forming gas (Ar 93% + H2 7%) at 450 °C. XRD shows that CoFe2 films are textured out-of-plane and aligned in-plane, owing to lattice matching between CoFe2 and MgO substrate. TEM results indicate that as-deposited films are continuous while the annealed films exhibit a nanopore mushroom structure. The magnetic anisotropy of CoFe2 films is dominated by the shape effect. The results demonstrate that hydrogen reduction can be effectively used to modify microstructures and physical properties of complex metal oxide materials.

  6. Electric field effect on the magnetization process for a very thin Co60Fe40 film

    NASA Astrophysics Data System (ADS)

    Suzuki, K. Z.; Ranjbar, R.; Sugihara, A.; Kondo, Y.; Mizukami, S.

    2016-08-01

    The electric field effect on the magnetization process for a very thin Co60Fe40 film was studied. The magnetization process under the electric field was characterized using tunnel magnetoresistance curves measured in a fully-epitaxial (001)-oriented CoFe(1)/MgO/CoFe(3) (thickness in nanometers) magnetic tunnel junction, where both the CoFe electrodes are magnetized in- plane. The out-of-plane saturation field of the thinner CoFe electrode changed linearly by varying the applied voltage, and the field-induced change of saturation field was estimated to be -0.10 TV-1. This change in the saturation field is interpreted as the electric field induced change in a perpendicular magnetic anisotropy originating from the CoFe/MgO interface. The electric field effect efficiency was estimated to be about 200 fJV-1 m-1.

  7. Microstructure and magnetic properties of La-Co substituted strontium hexaferrite films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Ebrahimi, S. A. Seyyed; Ong, C. K.

    2013-09-01

    Microstructure and magnetic properties of La-Co substituted strontium hexaferrite films (Sr1-xLaxFe12-xCoxO19) fabricated by pulsed laser deposition on Si(100)/Pt(111) substrate were investigated. The coercivities of the films in perpendicular direction were higher than those in in-plane direction which confirms the perpendicular magnetic anisotropy of the films. Atomic force microscopy images of the films revealed decreasing of the plate-like grains size, from 300 to 110 nm with increasing the La-Co contents. The saturation magnetization increased slightly till x=0.2 and then decreased from x=0.2 to x=0.4. However, the coercivity increased from 2.3 kOe for the SrFe12O19 film to 4.1 kOe for the Sr0.6La0.4Fe11.6Co0.4O19 film, because of the decrease of the grain size and increase of the magnetic anisotropy field.

  8. Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

    SciTech Connect

    Thomas, Luc Jan, Guenole; Le, Son; Wang, Po-Kang

    2015-04-20

    The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

  9. Electrodeposited Co{sub 93.2}P{sub 6.8} nanowire arrays with core-shell microstructure and perpendicular magnetic anisotropy

    SciTech Connect

    Nasirpouri, F.; Peighambari, S. M.; Samardak, A. S. Ognev, A. V.; Sukovatitsina, E. V.; Modin, E. B.; Chebotkevich, L. A.; Komogortsev, S. V.; Bending, S. J.

    2015-05-07

    We demonstrate the formation of an unusual core-shell microstructure in Co{sub 93.2}P{sub 6.8} nanowires electrodeposited by alternating current (ac) in an alumina template. By means of transmission electron microscopy, it is shown that the coaxial-like nanowires contain amorphous and crystalline phases. Analysis of the magnetization data for Co-P alloy nanowires indicates that a ferromagnetic core is surrounded by a weakly ferromagnetic or non-magnetic phase, depending on the phosphor content. The nanowire arrays exhibit an easy axis of magnetization parallel to the wire axis. For this peculiar composition and structure, the coercivity values are 2380 ± 50 and 1260 ± 35 Oe, parallel and perpendicular to the plane directions of magnetization, respectively. This effect is attributed to the core-shell structure making the properties and applications of these nanowires similar to pure cobalt nanowires with an improved perpendicular anisotropy.

  10. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  11. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    NASA Astrophysics Data System (ADS)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co2FeAl (CFA) thin films of different thicknesses (10 nmfilms. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of -1.86 erg/cm2.

  12. Scalable Thick-Film Magnetics: Nano Structured Scalable Thick-Film Magnetics

    SciTech Connect

    2011-01-01

    ADEPT Project: Magnetic components are typically the largest components in a power converter. To date, however, researchers haven't found an effective way to reduce their size without negatively impacting their performance. And, reducing the size of the converter's other components isn't usually an option because shrinking them can also diminish the effectiveness of the magnetic components. GE is developing smaller magnetic components for power converters that maintain high performance levels. The company is building smaller components with magnetic films. These films are created using the condensation of a vaporized form of the magnetic material. It's a purely physical process that involves no chemical reactions, so the film composition is uniform. This process makes it possible to create a millimeter-thick film deposition over a wide surface area fairly quickly, which would save on manufacturing costs. In fact, GE can produce 1-10 millimeter-thick films in hours. The magnetic components that GE is developing for this project could be used in a variety of applications, including solar inverters, electric vehicles, and lighting.

  13. Structural and Magnetic Properties of Fe Films Electrodeposited on Al Substrates

    NASA Astrophysics Data System (ADS)

    Mebarki, M.; Layadi, A.; Khelladi, M. R.; Azizi, A.; Tiercelin, N.; Preobrazhensky, V.; Pernod, P.

    2016-07-01

    Series of Fe films have been prepared by electrodeposition in a solution of iron chloride onto Al substrate. Different deposition times were used in the elaboration process. The texture, the strain, and the grain size values were derived from X-ray diffraction experiments. Scanning electron microscopy (SEM) has been used to get the surface and the cross section images. Vibrating Sample magnetometer has been used to obtain the hysteresis curves; the external magnetic field was applied in different directions in the film plane, and also perpendicular to the film. Hysteresis curves have been obtained at low temperatures [120 K (-153 °C) to room temperature]. The <100> texture, small strain, and grain size ranging from 58 to 113 nm are found for these Fe/Al films. All samples show an in-plane magnetic anisotropy, with no preferred orientation within the film plane. Depending on the film thickness range, different mechanisms have been found to be responsible for the coercive field H C behavior. These magnetic properties are correlated with the structural ones and with the SEM observations.

  14. Development of nanostructured, stress-free Co-rich CoPtP films for magnetic microelectromechanical system applications

    NASA Astrophysics Data System (ADS)

    Kulkarni, Santosh; Roy, Saibal

    2007-05-01

    Co-rich CoPtP alloys have been electrodeposited using direct current (dc) and pulse-reverse (PR) plating techniques. The surface morphology, crystalline structure, grain size, and magnetic properties of the plated films have been compared. The x-ray analysis and magnetic measurements reveal the presence of Co hcp hard magnetic phase with c axis perpendicular to the substrate for dc and in plane for PR plated films. The dc plated films have a granular structure in the micron scale with large cracks, which are manifestation of stress in the film. Only by using a combination of optimized PR plating conditions and stress relieving additive, we are able to produce 1-6μm thick (for 1 hour of plating), stress-free, and nanostructured (˜20nm) Co-rich CoPtP single hcp phase at room temperature, with an intrinsic coercivity of 1500Oe.

  15. Magnetic cassette for radiographic film material

    SciTech Connect

    Dallas, D.

    1985-03-26

    A radiographic film cassette having a plurality of magnet components integral with the cassette holder for adhering the cassette to ferrous material in X-raying for defects in welds or fissures in shipyards, pipe lines, or the like. What is provided is a substantially flexible cassette envelope comprising first and second layers of radiographic intensifying screens with a sheet of radiographic film positioned therebetween. The cassette would be a cassette envelope constructed of waterproof fabric or other suitable material providing a light-free environment, and having the ability to flex around the curvature of the surface of a pipe or the like to be x-rayed. There is further provided a plurality of magnet components, preferably situated in each corner of the cassette envelope and flexibly attached thereto for overall adherence of the envelope to the surface of the pipe or the like to be x-rayed during the process.

  16. WE-G-17A-09: Novel Magnetic Shielding Design for Inline and Perpendicular Integrated 6 MV Linac and 1.0 T MRI Systems

    SciTech Connect

    Li, X; Ma, B; Kuang, Y; Diao, X

    2014-06-15

    Purpose: The influence of fringe magnetic fields delivered by magnetic resonance imaging (MRI) on the beam generation and transportation in Linac is still a major challenge for the integration of linear accelerator and MRI (Linac-MRI). In this study, we investigated an optimal magnetic shielding design for Linac-MRI and further characterized the beam trajectory in electron gun. Methods: Both inline and perpendicular configurations were analyzed in this study. The configurations, comprising a Linac-MRI with a 100cm SAD and an open 1.0 T superconductive magnet, were simulated by the 3D finite element method (FEM). The steel shielding around the Linac was included in the 3D model, the thickness of which was varied from 1mm to 20mm, and magnetic field maps were acquired with and without additional shielding. The treatment beam trajectory in electron gun was evaluated using OPERA 3d SCALA with and without shielding cases. Results: When Linac was not shielded, the uniformity of diameter sphere volume (DSV) (30cm) was about 5 parts per million (ppm) and the fringe magnetic fields in electron gun were more than 0.3 T. With shielding, the magnetic fields in electron gun were reduced to less than 0.01 T. For the inline configuration, the radial magnetic fields in the Linac were about 0.02T. A cylinder steel shield used (5mm thick) altered the uniformity of DSV to 1000 ppm. For the perpendicular configuration, the Linac transverse magnetic fields were more than 0.3T, which altered the beam trajectory significantly. A 8mm-thick cylinder steel shield surrounding the Linac was used to compensate the output losses of Linac, which shifted the magnetic fields' uniformity of DSV to 400 ppm. Conclusion: For both configurations, the Linac shielding was used to ensure normal operation of the Linac. The effect of magnetic fields on the uniformity of DSV could be modulated by the shimming technique of the MRI magnet. NIH/NIGMS grant U54 GM104944, Lincy Endowed Assistant Professorship.

  17. Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence

    NASA Astrophysics Data System (ADS)

    Meng, Hao; Naik, Vinayak Bharat; Liu, Ruisheng; Han, Guchang

    2014-07-01

    We report an investigation of electric-field (EF) control of spin re-orientation as functions of the thicknesses of CoFeB free layer (FL) and MgO layer in synthetic-antiferromagnetic pinned magnetic tunnel junctions with perpendicular magnetic anisotropy. It is found that the EF modulates the coercivity (Hc) of the FL almost linearly for all FL thicknesses, while the EF efficiency, i.e., the slope of the linearity, increases as the FL thickness increases. This linear variation in Hc is also observed for larger MgO thicknesses (≥1.5 nm), while the EF efficiency increases only slightly from 370 to 410 Oe nm/V when MgO thickness increases from 1.5 to 1.76 nm. We have further observed the absence of quasi-DC unipolar switching. We discuss its origin and highlight the underlying challenges to implement the EF controlled switching in a practical magnetic memory.

  18. Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications

    SciTech Connect

    Park, Junbo; Rowlands, G. E.; Lee, O. J.; Buhrman, R. A.; Ralph, D. C.

    2014-09-08

    We model, using the macrospin approximation, the magnetic reversal of a perpendicularly magnetized nanostructured free layer formed on a normal, heavy-metal nanostrip, subjected to spin-orbit torques (SOTs) generated by short (≤0.5 ns) current pulses applied to the nanostrip, to examine the potential for SOT-based fast, efficient cryogenic memory. Due to thermal fluctuations, if solely an anti-damping torque is applied, then, for a device with sufficiently low anisotropy (H{sub anis}{sup 0} ∼ 1 kOe) suitable for application in cryogenic memory, a high magnetic damping parameter (α∼0.1−0.2) is required for reliable switching over a significant variation of pulse current. The additional presence of a substantial field-like torque improves switching reliability even for low damping (α≤0.03).

  19. Tunable ferromagnetic and antiferromagnetic interfacial exchange coupling in perpendicularly magnetized L10-MnGa/Co2FeAl Heusler bilayers

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Mizukami, S.; Zhang, X. M.; Miyazaki, T.

    2014-12-01

    In this work, we report a tailorable exchange coupling (Jex) at the Mn62Ga38/Co2FeAl interface, where Mn62Ga38 and Co2FeAl alloys are tetragonal Heusler alloy with high perpendicular magnetic anisotropy and typical cubic Heusler alloy with soft magnetism, respectively. As the post annealing temperature (Ta) is lower than 375 °C, the Jex is ferromagnetic with strength controllable from 7.5 to 0.5 erg/cm2. Interestingly, as Ta increases higher than 400 °C, an antiferromagnetic Jex of -5.5 erg/cm2 is observed. The ferromagnetic/antiferromagnetic transition is further evidenced by the spin dependent transport property of the magnetic tunnel junctions with Mn62Ga38/Co2FeAl as electrode. Based on structure characterization, the variation of Jex during annealing is discussed.

  20. Micro Structure of Nickel in Spin Coated Thin Film Magnets

    NASA Astrophysics Data System (ADS)

    Vides, Katherine; Dahanayake, Rasika; Samarasekara, Pubudu; Dehipawala, Sunil

    2014-03-01

    Micro-Structure of Nickel compounds in thin film magnets was investigated using Extended X ray Absorption Fine Structure (EXAFS) and X-ray Absorption Near Edge Structure (XANES). These thin film magnets were prepared by spin coating several layers of precursor containing iron and Nickel on a glass substrate. Thickness of the films was controlled by spin rate. Several magnets were prepared with different thicknesses and each film was annealed to either 200C or 350c in air. Variation of oxidation state and nearest neighbor bond lengths of each magnet was measured to characterize Ni in the film.

  1. Electric control of magnetization relaxation in thin film magnetic insulators.

    SciTech Connect

    Wang, Z.; Sun, Y.; Song, Y-Y.; Wu, M.; Schultheiss, H.; Pearson, J. E.; Hoffmann, A.

    2011-10-01

    Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thickness. As this current scatters off the YIG surface, it exerts a torque on the YIG surface spins. This torque can reduce or enhance the damping and thereby decrease or increase the ferromagnetic resonance linewidth of the YIG film, depending on the field/current configuration.

  2. Enhanced heteroepitaxial growth of CoCrPt-SiO{sub 2} perpendicular magnetic recording media on optimized Ru intermediate layers

    SciTech Connect

    Srinivasan, Kumar; Piramanayagam, S. N.

    2008-01-15

    The crystallographic growth, interfacial roughness, and magnetic properties of CoCrPt-SiO{sub 2} perpendicular magnetic recording media prepared on various types of Ru intermediate growth layers were systematically investigated based on high angle and omega offset x-ray diffraction scans, rocking curve scans, synchrotron radiation based grazing incidence reflectivity scans, and magneto-optical Kerr hysteresis loops. For samples that make use of one Ru growth layer, voltage bias applied on the Ru layer was seen to have two observable effects: (1) the dispersion in the Ru(00{center_dot}2) perpendicular texture increased, but that of the Co(00{center_dot}2) remained unchanged, leading to identical layered growth and (2) the in-plane a-lattice parameter of the Ru decreased leading to enhanced heteroepitaxy with the Co. There was no significant change in the Ru-Co interfacial roughness with changing the bias on the Ru layer. The bias effect can be used to optimize the design of the Ru intermediate layers. A scheme that makes use of two Ru growth layers consisting of a bottom Ru layer prepared under zero bias, which is inserted below a second Ru layer prepared under biased conditions, is shown to lead to significant benefits such as improved texture without affecting the magnetic properties. This is due to the different functional roles ascribed to each of the Ru growth layers.

  3. Interfacial oxygen migration and its effect on the magnetic anisotropy in Pt/Co/MgO/Pt films

    SciTech Connect

    Chen, Xi; Feng, Chun E-mail: ghyu@mater.ustb.edu.cn; Liu, Yang; Jiang, Shaolong; Hua Li, Ming; Hua Yu, Guang E-mail: ghyu@mater.ustb.edu.cn; Long Wu, Zheng; Yang, Feng

    2014-02-03

    This paper reports the interfacial oxygen migration effect and its induced magnetic anisotropy evolution in Pt/Co/MgO/Pt films. During depositing the MgO layer, oxygen atoms from the MgO combine with the neighboring Co atoms, leading to the formation of CoO at the Co/MgO interface. Meanwhile, the films show in-plane magnetic anisotropy (IMA). After annealing, most of the oxygen atoms in CoO migrate back to the MgO layer, resulting in obvious improvement of Co/MgO interface and the enhancement of effective Co-O orbital hybridization. These favor the evolution of magnetic anisotropy from IMA to perpendicular magnetic anisotropy (PMA). The oxygen migration effect is achieved by the redox reaction at the Co/MgO interface. On the contrary, the transfer from IMA to PMA cannot be observed in Pt/Co/Pt films due to the lack of interfacial oxygen migration.

  4. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    SciTech Connect

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  5. Magnetic, Magneto-Optic and Structural Studies of Platinum-Manganese Antimonide Thin Films

    NASA Astrophysics Data System (ADS)

    Attaran-Kakhki, Ebrahim

    Available from UMI in association with The British Library. Requires signed TDF. Media for current high density magneto-optic storage systems have certain basic requirements such as perpendicular (to the surface) anisotropy, suitable magnetization, coercivity, domain and grain sizes and high optical Kerr and Faraday rotations. At present no known material combines all these properties to the optimum. However, ferromagnetic compounds with the Heusler Cl_{rm b} structure, which are members of a class of materials known as "half metallic" materials exhibit high magneto -optic properties. The present work is an investigation of PtMnSb sputtered thin films as possible media for high density magneto-optic memory systems. It is divided into three main sections. The first section is concerned with the crystal structure and magnetic properties of these films. Compositions and structure of the films have been determined by Rutherford back scattering spectroscopy, X-ray diffractometry and electron microscopy. The magnetic properties have been measured with a sensitive vibrating sample magnetometer. The amorphous assputtered films become ferromagnetic when annealed in vacuum. Crystal and magnetic ordering commences at a temperature of about 160^circC and is completed at temperatures between 400-500 ^circC. The annealed films become significantly more transparent with an in-plane easy axis of magnetization. The optimum saturation magnetization is about 570 kA/m which is close to the magnetization of the bulk PtMnSb alloy. Coercivity for these films is in the range 12-15 KA/m. The second section is concerned with the magneto -optical properties of these thin films. The magneto-optic Kerr and Faraday effects were measured with a magneto-optic hysteresis loop plotter. Optical rotations of 1.35 ^circ and 8 times 10^5^circ/cm have been measured in reflection and transmission respectively. The highest magnetization and optical rotations are for the composition Pt_{31}Mn _{38}Sb_{31

  6. Magnetic studies of polystyrene/iron-filled multi-wall carbon nanotube composite films

    NASA Astrophysics Data System (ADS)

    Makarova, T. L.; Zakharchuk, I.; Geydt, P.; Lahderanta, E.; Komlev, A. A.; Zyrianova, A. A.; Kanygin, M. A.; Sedelnikova, O. V.; Suslyaev, V. I.; Bulusheva, L. G.; Okotrub, A. V.

    2016-10-01

    Polystyrene/iron-filled multi-wall carbon nanotube composite films were prepared by solution processing, forge-rolling and stretching methods. Elongated iron carbide nanoparticles formed because of catalytic growth are situated inside the hollow cavity of the nanotubes. Magnetic susceptibility measurements as well as records of isothermal hysteresis loops performed in three perpendicular directions of magnetic field confirmed that the nanotubes have a preferential alignment in the matrix. Strong diamagnetic anisotropy in the composites emerges not only from the MWCNTs but also from the polystyrene matrix. The polymer sticks to the honeycomb lattice through the interaction of the π-orbitals of the phenyl ring and those of the carbon nanotube, contributing to anisotropic diamagnetic response. The contribution of iron nanoparticles to overall magnetic response strongly depends on nanotube concentration in the composite as well as on matrix-filler non-covalent stacking, which influences magnetic interparticle interactions.

  7. Investigation of magnetic properties of thin films using computer simulation

    NASA Astrophysics Data System (ADS)

    Balakirev, N. A.; Zhikharev, V. A.; Gumarov, G. G.

    2012-03-01

    A two-dimensional dendrite is generated within the diffusion limited aggregation (DLA) model in the presence of an external magnetic field. The magnetic interaction between a grown dendrite and diffusing atoms results in the elongation of the dendrite in the direction of the magnetic field. The dependence is studied of the dendrite elongation on the grid occupation. The energy of the magnetic anisotropy is calculated for an elongated dendrite. The FMR spectra are calculated in geometries when the static magnetic field is either perpendicular or parallel to dendrite plane. It is shown that the FMR signals in latter case depend on the static magnetic field orientation with respect to the elongation direction.

  8. Enhancement of magnetic domain topologies in Co/Pt thin films by fine tuning the magnetic field path throughout the hysteresis loop

    NASA Astrophysics Data System (ADS)

    Westover, Andrew S.; Chesnel, Karine; Hatch, Kelsey; Salter, Philip; Hellwig, Olav

    2016-02-01

    We have studied the influence of magnetic history on the topology of perpendicular magnetic domains in a thin ferromagnetic film made of [Co(8 Å)/Pt(7 Å)]50 multilayers. More specifically, we have followed the morphological changes in the domain pattern when applying a magnetic field perpendicular to the layer, throughout minor and major magnetization loops, and in the resulting remanent state. We carried out this study by using MFM microscopy with an in-situ magnetic field. We find that the morphology of the magnetic domain pattern is greatly influenced by the magnetic history of the material and that some features, such as the degree of bubbliness (i.e., the extent of bubble domain formation) and density of isolated domains can be enhanced by fine tuning the magnetic field path within the major hysteresis loop towards different remanent states. In particular, we see how hysteresis is correlated to irreversible changes in the domain morphology. More interestingly, we find that the magnetic domain morphology at remanence can be changed from an interconnected labyrinthine stripe state to a state of many separated bubble domains by fine tuning the magnitude of the field previously applied to the material. These results agree well with other findings, such as the magnetic reversal behavior and magnetic memory effects in Co/Pt multilayers, and provide opportunities for potential technological applications.

  9. Unsymmetrical magnetization switching in Fe/Si(001) single crystalline film induced by weak bias field

    NASA Astrophysics Data System (ADS)

    Ye, Jun; He, Wei; Wu, Qiong; Hu, Bo; Tang, Jin; Zhang, Xiang-Qun; Chen, Zi-Yu; Cheng, Zhao-Hua

    2014-03-01

    The weak bias field applied on perpendicular direction of the external field provides an excellent opportunity to investigate the in-plane magnetization reversal process of Fe/Si(001) film. In this work, we present the magneto-optical Kerr effect test of Fe single crystal film grown on Si(001) substrate with ultrathin p(2 × 2) iron silicide as buffer layer. Owing to the weak bias field, both 180° and 90° domain wall displacements were observed in one hysteresis loop between the easy axis and hard axis of iron film. Furthermore, both the 180° and 90° domain wall pinning energies can be derived from one hysteresis loop with weak bias field.

  10. Superconducting and Insulating Phases of Disordered FeSe Thin Films in a Magnetic Field

    NASA Astrophysics Data System (ADS)

    Schneider, R.; Zaitsev, A. G.; Fuchs, D.; von Löhneysen, H.

    2015-01-01

    The temperature-dependent electronic transport on the superconducting and insulating sides of the superconductor-insulator transition in disordered quasi-two-dimensional textured FeSe thin films is reported. The transition is driven by a perpendicular magnetic field applied to a film with its thickness close to the critical thickness of the thickness-, i.e., disorder-induced transition. The resistance in the superconducting phase might be dominated by thermally assisted flux flow, and in the phase diagram a metallic phase might intervene between the superconducting and insulating state at very low temperatures. In the insulating phase, weak insulating behavior is observed that can be described by weak localization theory of bosons, thus supporting the bosonic description of the superconductor-insulator transition in FeSe thin films.

  11. Manipulating magnetic anisotropy of the ultrathin Co2FeAl full-Heusler alloy film via growth orientation of the Pt buffer layer

    NASA Astrophysics Data System (ADS)

    Wen, F. S.; Xiang, J. Y.; Hao, C. X.; Zhang, F.; Lv, Y. F.; Wang, W. H.; Hu, W. T.; Liu, Z. Y.

    2013-12-01

    The ultrathin films of Co2FeAl (CFA) full-Heusler alloy were prepared between two Pt layers on MgO single crystals by magnetron sputtering. By controlling the substrate temperature, different growth orientations of the Pt underlayers were realized, and their effects were investigated on the magnetic anisotropy of the ultrathin CFA film. It was revealed that different Pt orientations lead to distinctly different magnetic anisotropy for the sandwiched ultrathin CFA films. The Pt (111) orientation favors the perpendicular anisotropy, while the appearance of partial Pt (001) orientation leads to the quick decrease of perpendicular anisotropy and the complete Pt (001) orientation gives rise to the in-plane anisotropy. With the Pt (111) orientation, the temperature and thickness-induced spin reorientation transitions were investigated in the sandwiched ultrathin CFA films.

  12. Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

    SciTech Connect

    Yang, G.; Li, D. L.; Wang, S. G. Ma, Q. L.; Liang, S. H.; Wei, H. X.; Han, X. F.; Hesjedal, T.; Ward, R. C. C.; Kohn, A.; Elkayam, A.; Tal, N.; Zhang, X.-G.

    2015-02-28

    Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

  13. Magnetic and structural modifications in Fe and Ni films prepared by ion-assisted deposition

    SciTech Connect

    Lewis, W.A. ); Farle, M. ); Clemens, B.M.; White, R.L. )

    1994-05-15

    We summarize our observations of in-plane uniaxial magnetic anisotropy induced in 1000 A Ni and Fe thin films by 100 eV Xe[sup +] ion bombardment during deposition. The anisotropy was measured by means of the magneto-optic Kerr effect and full angular scan ferromagnetic resonance. The maximum in-plane anisotropy field was 150 Oe for Ni and 80 Oe for Fe. The hard direction of magnetization lies parallel to the plane of incidence for Ni and perpendicular to it for Fe. An expansion of the lattice of up to 0.6% normal to the film and an enhancement of the fiber texture are found in both cases. This out-of-plane expansion is accompanied by an in-plane compression. In addition, a small in-plane difference in lattice spacings ([lt]0.2%) is found between directions parallel and perpendicular to the plane of incidence of the ions. The in-plane uniaxial magnetic anisotropy is attributed to the in-plane anisotropic strain using a simple magnetoelastic model.

  14. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

    SciTech Connect

    Maryško, M. Hejtmánek, J.; Laguta, V.; Sofer, Z.; Sedmidubský, D.; Šimek, P.; Veselý, M.; Mikulics, M.; Buchal, C.; Macková, A.; Malínský, P.; Wilhelm, R. A.

    2015-05-07

    The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb{sup 3+}, Tm{sup 3+}, Sm{sup 3+}, and Ho{sup 3+} ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr{sup 3+} and Fe{sup 3+} impurities. The samples 5 × 5 mm{sup 2} were positioned in the classical straws and within an estimated accuracy of 10{sup −6 }emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb{sup 3+} ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

  15. Extracting magnetic cluster size and its distributions in advanced perpendicular recording media with shrinking grain size using small angle x-ray scattering

    SciTech Connect

    Mehta, Virat; Ikeda, Yoshihiro; Takano, Ken; Terris, Bruce D.; Hellwig, Olav; Wang, Tianhan; Wu, Benny; Graves, Catherine; Dürr, Hermann A.; Scherz, Andreas; Stöhr, Jo

    2015-05-18

    We analyze the magnetic cluster size (MCS) and magnetic cluster size distribution (MCSD) in a variety of perpendicular magnetic recording (PMR) media designs using resonant small angle x-ray scattering at the Co L{sub 3} absorption edge. The different PMR media flavors considered here vary in grain size between 7.5 and 9.5 nm as well as in lateral inter-granular exchange strength, which is controlled via the segregant amount. While for high inter-granular exchange, the MCS increases rapidly for grain sizes below 8.5 nm, we show that for increased amount of segregant with less exchange the MCS remains relatively small, even for grain sizes of 7.5 and 8 nm. However, the MCSD still increases sharply when shrinking grains from 8 to 7.5 nm. We show evidence that recording performance such as signal-to-noise-ratio on the spin stand correlates well with the product of magnetic cluster size and magnetic cluster size distribution.

  16. NONRELATIVISTIC COLLISIONLESS SHOCKS IN WEAKLY MAGNETIZED ELECTRON-ION PLASMAS: TWO-DIMENSIONAL PARTICLE-IN-CELL SIMULATION OF PERPENDICULAR SHOCK

    SciTech Connect

    Kato, Tsunehiko N.; Takabe, Hideaki

    2010-09-20

    A two-dimensional particle-in-cell simulation is performed to investigate weakly magnetized perpendicular shocks with a magnetization parameter of {sigma} = 6 x 10{sup -5}, which is equivalent to a high Alfven Mach number M{sub A} of {approx}130. It is shown that current filaments form in the foot region of the shock due to the ion-beam-Weibel instability (or the ion filamentation instability) and that they generate a strong magnetic field there. In the downstream region, these current filaments also generate a tangled magnetic field that is typically 15 times stronger than the upstream magnetic field. The thermal energies of electrons and ions in the downstream region are not in equipartition and their temperature ratio is T{sub e}/T{sub i} {approx} 0.3-0.4. Efficient electron acceleration was not observed in our simulation, although a fraction of the ions are accelerated slightly on reflection at the shock. The simulation results agree very well with the Rankine-Hugoniot relations. It is also shown that electrons and ions are heated in the foot region by the Buneman instability (for electrons) and the ion-acoustic instability (for both electrons and ions). However, the growth rate of the Buneman instability is significantly reduced due to the relatively high temperature of the reflected ions. For the same reason, ion-ion streaming instability does not grow in the foot region.

  17. Role of Microstructural Phenomena in Magnetic Thin Films. Final Report

    SciTech Connect

    Laughlin, D. E.; Lambeth, D. N.

    2001-04-30

    Over the period of the program we systematically varied microstructural features of magnetic thin films in an attempt to better identify the role which each feature plays in determining selected extrinsic magnetic properties. This report summarizes the results.

  18. Laser controlled magnetism in hydrogenated fullerene films

    SciTech Connect

    Makarova, Tatiana L.; Shelankov, Andrei L.; Kvyatkovskii, Oleg E.; Zakharova, Irina B.; Buga, Sergei G.; Volkov, Aleksandr P.

    2011-04-15

    Room temperature ferromagnetic-like behavior in fullerene photopolymerized films treated with monatomic hydrogen is reported. The hydrogen treatment controllably varies the paramagnetic spin concentration and laser induced polymerization transforms the paramagnetic phase to a ferromagnetic-like one. Excess laser irradiation destroys magnetic ordering, presumably due to structural changes, which was continuously monitored by Raman spectroscopy. We suggest an interpretation of the data based on first-principles density-functional spin-unrestricted calculations which show that the excess spin from mono-atomic hydrogen is delocalized within the host fullerene and the laser-induced polymerization promotes spin exchange interaction and spin alignment in the polymerized phase.

  19. Magnetic Cellulose Nanocrystal Based Anisotropic Polylactic Acid Nanocomposite Films: Influence on Electrical, Magnetic, Thermal, and Mechanical Properties.

    PubMed

    Dhar, Prodyut; Kumar, Amit; Katiyar, Vimal

    2016-07-20

    This paper reports a single-step co-precipitation method for the fabrication of magnetic cellulose nanocrystals (MGCNCs) with high iron oxide nanoparticle content (∼51 wt % loading) adsorbed onto cellulose nanocrystals (CNCs). X-ray diffraction (XRD), Fourier transform infrared (FTIR), and Raman spectroscopic studies confirmed that the hydroxyl groups on the surface of CNCs (derived from the bamboo pulp) acted as anchor points for the adsorption of Fe3O4 nanoparticles. The fabricated MGCNCs have a high magnetic moment, which is utilized to orient the magnetoresponsive nanofillers in parallel or perpendicular orientations inside the polylactic acid (PLA) matrix. Magnetic-field-assisted directional alignment of MGCNCs led to the incorporation of anisotropic mechanical, thermal, and electrical properties in the fabricated PLA-MGCNC nanocomposites. Thermomechanical studies showed significant improvement in the elastic modulus and glass-transition temperature for the magnetically oriented samples. Differential scanning calorimetry (DSC) and XRD studies confirmed that the alignment of MGCNCs led to the improvement in the percentage crystallinity and, with the absence of the cold-crystallization phenomenon, finds a potential application in polymer processing in the presence of magnetic field. The tensile strength and percentage elongation for the parallel-oriented samples improved by ∼70 and 240%, respectively, and for perpendicular-oriented samples, by ∼58 and 172%, respectively, in comparison to the unoriented samples. Furthermore, its anisotropically induced electrical and magnetic properties are desirable for fabricating self-biased electronics products. We also demonstrate that the fabricated anisotropic PLA-MGCNC nanocomposites could be laminated into films with the incorporation of directionally tunable mechanical properties. Therefore, the current study provides a novel noninvasive approach of orienting nontoxic bioderived CNCs in the presence of low

  20. Magnetic Cellulose Nanocrystal Based Anisotropic Polylactic Acid Nanocomposite Films: Influence on Electrical, Magnetic, Thermal, and Mechanical Properties.

    PubMed

    Dhar, Prodyut; Kumar, Amit; Katiyar, Vimal

    2016-07-20

    This paper reports a single-step co-precipitation method for the fabrication of magnetic cellulose nanocrystals (MGCNCs) with high iron oxide nanoparticle content (∼51 wt % loading) adsorbed onto cellulose nanocrystals (CNCs). X-ray diffraction (XRD), Fourier transform infrared (FTIR), and Raman spectroscopic studies confirmed that the hydroxyl groups on the surface of CNCs (derived from the bamboo pulp) acted as anchor points for the adsorption of Fe3O4 nanoparticles. The fabricated MGCNCs have a high magnetic moment, which is utilized to orient the magnetoresponsive nanofillers in parallel or perpendicular orientations inside the polylactic acid (PLA) matrix. Magnetic-field-assisted directional alignment of MGCNCs led to the incorporation of anisotropic mechanical, thermal, and electrical properties in the fabricated PLA-MGCNC nanocomposites. Thermomechanical studies showed significant improvement in the elastic modulus and glass-transition temperature for the magnetically oriented samples. Differential scanning calorimetry (DSC) and XRD studies confirmed that the alignment of MGCNCs led to the improvement in the percentage crystallinity and, with the absence of the cold-crystallization phenomenon, finds a potential application in polymer processing in the presence of magnetic field. The tensile strength and percentage elongation for the parallel-oriented samples improved by ∼70 and 240%, respectively, and for perpendicular-oriented samples, by ∼58 and 172%, respectively, in comparison to the unoriented samples. Furthermore, its anisotropically induced electrical and magnetic properties are desirable for fabricating self-biased electronics products. We also demonstrate that the fabricated anisotropic PLA-MGCNC nanocomposites could be laminated into films with the incorporation of directionally tunable mechanical properties. Therefore, the current study provides a novel noninvasive approach of orienting nontoxic bioderived CNCs in the presence of low

  1. A study of the effect of in-line and perpendicular magnetic fields on beam characteristics of electron guns in medical linear accelerators

    SciTech Connect

    Constantin, Dragos E.; Fahrig, Rebecca; Keall, Paul J.

    2011-07-15

    Purpose: Using magnetic resonance imaging (MRI) for real-time guidance during radiotherapy is an active area of research and development. One aspect of the problem is the influence of the MRI scanner, modeled here as an external magnetic field, on the medical linear accelerator (linac) components. The present work characterizes the behavior of two medical linac electron guns with external magnetic fields for in-line and perpendicular orientations of the linac with respect to the MRI scanner. Methods: Two electron guns, Litton L-2087 and Varian VTC6364, are considered as representative models for this study. Emphasis was placed on the in-line design approach in which case the MRI scanner and the linac axes of symmetry coincide and assumes no magnetic shielding of the linac. For the in-line case, the magnetic field from a 0.5 T open MRI (GE Signa SP) magnet with a 60 cm gap between its poles was computed and used in full three dimensional (3D) space charge simulations, whereas for the perpendicular case the magnetic field was constant. Results: For the in-line configuration, it is shown that the electron beam is not deflected from the axis of symmetry of the gun and the primary beam current does not vanish even at very high values of the magnetic field, e.g., 0.16 T. As the field strength increases, the primary beam current has an initial plateau of constant value after which its value decreases to a minimum corresponding to a field strength of approximately 0.06 T. After the minimum is reached, the current starts to increase slowly. For the case when the beam current computation is performed at the beam waist position the initial plateau ends at 0.016 T for Litton L-2087 and at 0.012 T for Varian VTC6364. The minimum value of the primary beam current is 27.5% of the initial value for Litton L-2087 and 22.9% of the initial value for Varian VTC6364. The minimum current is reached at 0.06 and 0.062 T for Litton L-2087 and Varian VTC6364, respectively. At 0.16 T the

  2. A study of the effect of in-line and perpendicular magnetic fields on beam characteristics of electron guns in medical linear accelerators

    PubMed Central

    Constantin, Dragoş E.; Fahrig, Rebecca; Keall, Paul J.

    2011-01-01

    Purpose: Using magnetic resonance imaging (MRI) for real-time guidance during radiotherapy is an active area of research and development. One aspect of the problem is the influence of the MRI scanner, modeled here as an external magnetic field, on the medical linear accelerator (linac) components. The present work characterizes the behavior of two medical linac electron guns with external magnetic fields for in-line and perpendicular orientations of the linac with respect to the MRI scanner. Methods: Two electron guns, Litton L-2087 and Varian VTC6364, are considered as representative models for this study. Emphasis was placed on the in-line design approach in which case the MRI scanner and the linac axes of symmetry coincide and assumes no magnetic shielding of the linac. For the in-line case, the magnetic field from a 0.5 T open MRI (GE Signa SP) magnet with a 60 cm gap between its poles was computed and used in full three dimensional (3D) space charge simulations, whereas for the perpendicular case the magnetic field was constant. Results: For the in-line configuration, it is shown that the electron beam is not deflected from the axis of symmetry of the gun and the primary beam current does not vanish even at very high values of the magnetic field, e.g., 0.16 T. As the field strength increases, the primary beam current has an initial plateau of constant value after which its value decreases to a minimum corresponding to a field strength of approximately 0.06 T. After the minimum is reached, the current starts to increase slowly. For the case when the beam current computation is performed at the beam waist position the initial plateau ends at 0.016 T for Litton L-2087 and at 0.012 T for Varian VTC6364. The minimum value of the primary beam current is 27.5% of the initial value for Litton L-2087 and 22.9% of the initial value for Varian VTC6364. The minimum current is reached at 0.06 and 0.062 T for Litton L-2087 and Varian VTC6364, respectively. At 0.16 T the

  3. Many-body Interactions in Magnetic Films and Nanostructures

    SciTech Connect

    Stephen D. Kevan

    2012-12-12

    We describe results supported by DOE grant DE-FG02-04ER46158, which focused on magnetic interaction at surfaces, in thin films, and in metallic nanostructures. We report on three general topics: 1) The Rashba spin splitting at magnetic surfaces of rare earth metals, 2) magnetic nanowires self-assembled on stepped tungsten single crystals, and 3) magnetic interaction in graphene films doped with hydrogen atoms.

  4. Perpendicular ion acceleration in whistler turbulence

    SciTech Connect

    Saito, S.; Nariyuki, Y.

    2014-04-15

    Whistler turbulence is an important contributor to solar wind turbulence dissipation. This turbulence contains obliquely propagating whistler waves at electron scales, and these waves have electrostatic components perpendicular to the mean magnetic field. In this paper, a full kinetic, two-dimensional particle-in-cell simulation shows that whistler turbulence can accelerate ions in the direction perpendicular to the mean magnetic field. When the ions pass through wave-particle resonances region in the phase space during their cyclotron motion, the ions are effectively accelerated in the perpendicular direction. The simulation results suggest that whistler turbulence contributes to the perpendicular heating of ions observed in the solar wind.

  5. Role of substrate bias on the magnetic properties and microstructure of CoCrPt:SiO{sub 2} perpendicular recording media

    SciTech Connect

    Piramanayagam, S. N.; Mah, C. S.; Ong, C. Y.; Shi, J. Z.; Dumaya, Jo Alvin; Onoue, T.; Ishibashi, S.

    2007-05-15

    The role of substrate bias during the sputter deposition of various layers of double-layered CoCrPt-SiO{sub 2} perpendicular recording media has been investigated in order to understand the physical mechanisms behind the various effects observed. Perpendicular recording media with dual Ru intermediate layers were investigated using several magnetic and microstructural characterization techniques. It was observed that, in general, the application of a bias voltage during the deposition of the seedlayer (Ta) and the first intermediate layer (Ru) is helpful in reducing the c-axis dispersion of the recording layer. For the other layers, application of bias voltage leads to deterioration in the magnetic properties. It was also observed that the application of a bias voltage during the deposition of the first intermediate layer (especially Ru) may not enhance the preferred growth of Ru hexagonal-close-packed (00.2) planes parallel to the disk surface, as predicted before. However, the bias voltage on the Ru layer still reduces the c-axis dispersion of the magnetic layer. From the omega-offset x-ray diffraction investigations, it is estimated that the lattice parameter a'' of the Ru layer is reduced slightly with bias voltage, which could probably lead to a reduction in the lattice mismatch between the Ru layer and Co-alloy layer. Bias conditions also could lead to improved interface condition. Such an improvement in the lattice matching or interface conditions could probably be the cause of the reduction of c-axis dispersion of the recording layer.

  6. Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Lee, Du-Yeong; Shim, Tae-Hun; Park, Jea-Gun

    2016-07-01

    By fabricating CoFeB/MgO/CoFeB-based perpendicular-magnetic tunnel junction (p-MTJ) spin-valves stacked with a [Co/Pd] n -SyAF layer based on a TiN bottom electrode on a 12 inch Si wafer (001) substrate, we investigated how the bridging layers of Ta, Ti, and Pt and their thickness variation affected the tunneling magneto-resistance (TMR) ratio of Co2Fe6B2 pinned-layer behavior in magnetic-tunnel-junctions. TMR ratios for Ta, Ti, and Pt bridging layers were observed to be 64.1, 70.2, and 29.5%, respectively. It was confirmed by high resolution transmission electron microscopy (HR-TEM) that this difference resulted from CoFeB/MgO/CoFeB MTJ layers with Ta and Ti bridging layers being textured well with a bcc (100) structure, indicating that Ta and Ti bridging layers bridged SyAF fcc (111) and MTJ bcc (100). On the other hand, the MTJ layer with Pt bridging layer was incorrectly textured, indicating that a Pt bridging layer is unsuitable to bridge SyAF fcc (111) and MTJ bcc (100) due to Pt being diffused into the CoFeB pinned-layer. In addition, perpendicular magnetic anisotropy (PMA) behavior of the CoFeB pinned-layer was found to depend strongly on a bridging layer thickness; higher TMRs of Ta and Ti were observed at the optimal bridging layers’ thickness, which enable the realization of PMAs of the pinned-layer and ferro-coupling of the pinned-layer with the lower-SyAF layer. Among the three bridging materials (Ta, Ti, and Pt), we observed that Ti showed the highest TMR ratio and widest thickness range for a high TMR ratio, indicating that a higher TMR ratio is needed to obtain the best deposition process margin.

  7. Band structure of a 2D photonic crystal based on ferrofluids of Co(1-x)Znx Fe2O4 nanoparticles under perpendicular applied magnetic field

    NASA Astrophysics Data System (ADS)

    Lopez, Javier; Gonzalez, Luz Esther; Quinonez, Mario; Porras, Nelson; Zambrano, Gustavo; Gomez, Maria Elena

    2014-03-01

    Using a ferrfluid of cobalt-zinc ferrite nanoparticles Co(1 - x)ZnxFe2O4 coated with oleic acid and suspended in ethanol, we have fabricated a 2D photonic crystal (PC) by the application of an external magnetic field perpendicular to the plane of the ferrofluid. The 2D PC is made by rods of nanoparticles organized in a hexagonal structure. By means of the plane-wave expansion method, we study its photonic band structure (PBS) which depends on the effective permittivity and on the area ratio of the liquid phase. Additionaly, taking into account the Maxwell-Garnett theory we calculated the effective permittivity of the rods. We have found that the effective refractive index of the ferrofluid increases with its magnetization. Using these results we calculate the band structure of the photonic crystal at different applied magnetic fields, finding that the increase of the applied magnetic field shifts the band structure to lower frequencies with the appearance of more band gaps. Departamento de Física, Universidad del Valle, A.A. 25360, Cali, Colombia

  8. Verification of antiferromagnetic exchange coupling at room temperature using polar magneto-optic Kerr effect in thin EuS/Co multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Goschew, A.; Scott, M.; Fumagalli, P.

    2016-08-01

    We report on magneto-optic Kerr measurements in polar geometry carried out on a series of thin Co/EuS multilayers on suitable Co/Pd-multilayer substrates. Thin Co/EuS multilayers of a few nanometers individual layer thickness usually have their magnetization in plane. Co/Pd multilayers introduce a perpendicular magnetic anisotropy in the Co/EuS layers deposited on top, thus making it possible to measure magneto-optic signals in the polar geometry in remanence in order to study exchange coupling. Magneto-optic Kerr-effect spectra and hysteresis loops were recorded in the visible and ultraviolet photon-energy range at room temperature. The EuS contribution to the magneto-optic signal is extracted at 4.1 eV by combining hysteresis loops measured at different photon energies with polar magneto-optic Kerr-effect spectra recorded in remanence and in an applied magnetic field of 2.2 T. The extracted EuS signal shows clear signs of antiferromagnetic coupling of the Eu magnetic moments to the Co layers. This implies that the ordering temperature of at least a fraction of the EuS layers is above room temperature proving that magneto-optic Kerr-effect spectroscopy can be used here as a quasi-element-specific method.

  9. Aperture-ratio dependence of the efficiency of magneto-optical first-order diffraction in GdFe stripe arrays with alternating perpendicular magnetization

    NASA Astrophysics Data System (ADS)

    Wada, Kakeru; Antos, Roman; Aoshima, Ken-ichi; Machida, Kenji; Kuga, Kiyoshi; Ono, Hiroshi; Kikuchi, Hiroshi; Shimidzu, Naoki; Ishibashi, Takayuki

    2016-07-01

    The efficiency of magneto-optical (MO) diffraction in GdFe stripe arrays with alternating directions of perpendicular magnetization is investigated. The diffraction efficiency depends on the aperture ratio, as theoretically analyzed for an array composed of magnetic and nonmagnetic materials, with the magnetization directions parallel or antiparallel. The stripe patterns are composed of two ferromagnetic alloys of different compositions, Gd19.7Fe80.3 and Gd23.4Fe76.6 (denoted GF1 and GF2), having different coercivities in the parallel and antiparallel configurations. The stripe patterns are separated by nonmagnetic SiO2 stripes of different widths to obtain aperture ratios of 100, 75, 50 and 25%. The magnetization distributions in the samples is confirmed by MO microscopy. The diffraction efficiencies at a wavelength of 532 nm are measured to be 1.27×10-6, 1.04×10-6, 6.2×10-7 and 2.0×10-7 for aperture ratios of 100, 75, 50, and 25%, respectively. Those values are in accord with calculations using the measured MO and optical parameters of the GF1 layer, including the Kerr rotation angle of 0.12°, the Kerr ellipticity of -0.1° and the reflectance of 0.37.

  10. Coercivity enhancement of Nd-Fe-B thin film magnets by Dy buffer and capping layers

    NASA Astrophysics Data System (ADS)

    You, C. Y.; Wang, J. W.; Lu, Z. X.

    2012-04-01

    The Dy layer was inserted into the structure of SiO2/Ti/Nd-Fe-B/Ti as the buffer or capping layer of the Nd-Fe-B layer. The insertions of Dy layers had no significant influence on the film texture with the easy axis mainly perpendicular to the film plane. The film without Dy layer gave the out-of-plane coercivity of 533 kA/m, maximum magnetic energy product (BH)max of 245 kJ/m3. With a Dy buffer layer, the out-of-plane coercivity and (BH)max were increased to 1074 kA/m, 291 kJ/m3 respectively. The film with Dy capping layer had a coercivity of 1035 kA/m and (BH)max of 286 kJ/m3. Microstructure observations showed that the Nd-rich phases were evolved into grain boundaries from triple junctions by a Dy buffer layer deposition, resulting in a well magnetic decoupling of Nd2Fe14B neighboring grains. Through capping a Dy layer, the environment of grain boundaries had been improved and some Dy diffused into Nd2Fe14B phases, which contributed to the enhancement of magnetic performance.

  11. Microstructure and magnetic properties of (001) textured L1(0) FePt films on amorphous glass substrate

    SciTech Connect

    Speliotis, T; Varvaro, G; Testa, AM; Giannopoulos, G; Agostinelli, E; Li, W; Hadjipanayis, G; Niarchos, D

    2015-05-15

    L1(0) FePt thin films with an island-like morphology and magnetic perpendicular anisotropy were grown at low temperature (300 < T-dep< 375 degrees C) by magnetron sputtering on Hoya glass substrates using a 30-nm thick Cr (2 0 0) underlayer. An MgO buffer layer with a thickness of 2 nm was used to inhibit the diffusion from the Cr underlayer and promote the growth of (0 0 1) oriented L1(0) FePt films by inducing an in-plane lattice distortion. By varying the substrate temperature and the Ar sputter pressure (3.5 < P-Ar< 15 mTorr) during the deposition, the degree of chemical order, the microstructure and the magnetic properties were tuned and the best properties in term of squareness ratio (M-r/M-s similar to 0.95) and coercive field (H-c similar to 14 kOe) were observed for films deposited at T-dep = 350 degrees C and P-Ar= 5 mTorr, due to the appearance of a tensile strain, which favors the perpendicular anisotropy. The analysis of the angular dependence of remanent magnetization curves on the optimized sample suggests that the magnetization reversal is highly incoherent due to the inter-island interactions. Our results provide useful information on the low temperature growth of FePt films with perpendicular anisotropy onto glass substrates, which are relevant for a variety of technological applications, such as magnetic recording and spintronic devices. (C) 2015 Elsevier B.V. All rights reserved.

  12. Effects of varying CoCrV seed layer deposition pressure on Ru crystallinity in perpendicular magnetic recording media

    SciTech Connect

    Joost, W.; Das, A.; Alford, T. L.

    2009-10-01

    The effects of varying deposition parameters of a CoCrV seed layer under Ru on the structural and interfacial properties of both layers were studied. While sputtering power showed little effect on film structure, sputtering pressure during deposition of the seed layer had a significant effect on the structural properties of the seed layer. In particular, the grain morphology and crystallinity of the seed layer varied considerably with deposition pressure. Deposition of Ru using a constant recipe for all samples demonstrated the effect of varying seed layer deposition pressure on the Ru layer. The strain energy of the Ru film, a measurement of contraction due to the registry with the seed layer, was greatest at moderate seed layer sputtering pressures, while the Ru(0002) peak area was greatest at low sputtering pressures. The competing contributions of interfacial energy and strain energy describe this effect, with interfacial energy dominating at low sputtering pressures.

  13. Microwave solitons in magnetic films (invited) (abstract)

    NASA Astrophysics Data System (ADS)

    Boardman, A. D.; Xie, K.; Mehta, H.; Nikitov, S. A.

    1996-04-01

    Nonlinear waves in the form of solitons in magnetic films are attracting attention because of the interesting possibility of making novel spatial, and temporal, soliton devices that will operate in the technologically important microwave (GHz) frequency window. Some fascinating pioneering experimental work has been performed in this area and there is now every possibility that manipulation of solitonlike microwave pulses will be the basis of an entirely new range of devices. Both theory and experiment show that solitons are extremely robust and behave rather like particles. Magnetic films look set to become as successful as optical fibers in supporting bright envelope solitons; yet soliton behavior can often seem hard to comprehend. While they are subtle in their behavior they can be understood from many points of view that are physically, or mathematically, based. This presentation will explain what bright microwave envelope solitons are, drawing upon as much physical insight and analogy as possible. The necessary and sufficient conditions for soliton existence will be carefully set out, especially with respect to their relationship to the input conditions of a device. A substantial number of numerical examples will be used and the prospects for major expansion in the experimental area will be assessed. In the latter part of the presentation some important applications for solitons will be addressed. These will include the analysis of a switching device but logic devices, and various forms of pump-probe arrangements, will also be retrieved. Finally, the optimistic view that solitons in magnetic materials are now realistic tools will be expressed and the opportunities provided by dark and higher-dimensional solitons will be discussed.

  14. Capping layer-tailored interface magnetic anisotropy in ultrathin Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Belmeguenai, M.; Gabor, M. S.; Petrisor, T.; Zighem, F.; Chérif, S. M.; Tiusan, C.

    2015-01-01

    Co2FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of -0.46 erg/cm2 and 0.74 erg/cm2 for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin.

  15. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure

    NASA Astrophysics Data System (ADS)

    Suzuki, D.; Natsui, M.; Mochizuki, A.; Miura, S.; Honjo, H.; Kinoshita, K.; Fukami, S.; Sato, H.; Ikeda, S.; Endoh, T.; Ohno, H.; Hanyu, T.

    2014-05-01

    A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip.

  16. Nonlinear upper hybrid drift waves for a longitudinal electric field perpendicular to a uniform magnetic field in the Vlasov-Maxwell approximation

    NASA Technical Reports Server (NTRS)

    Abraham-Shrauner, B.

    1986-01-01

    Upper hybrid drift waves are found as a special solution to a Vlasov-Maxwell plasma which has a longitudinal electric field and a perpendicular uniform magnetic field. A single-species plasma with a constant-density mobile neutralizing background supports spatially varying disturbances that oscillate at the upper hybrid frequency. The general functional dependences of the electric field, the plasma number density, and the one-particle distribution function for the special case are found from more general Vlasov-Maxwell equations invariant under a Lie group point transformation. The one-particle distribution function for the plasma is a function of the Liouville invariant, which is the energy in the generalized Bernstein-Greene-Kruskal (BGK) reference frame, and the momentum in the drift direction.

  17. Thermally enhanced perpendicular magnetic anisotropy behaviors of ultrathin [Co/Pd]{sub n} multilayers via NiO{sub x} capping layer

    SciTech Connect

    Chung, Woo Seong; Lee, Ja Bin; An, Gwang Guk; Yang, Seung Mo; Kim, Jae Hong; Hong, Jin Pyo

    2015-06-01

    We report the enhanced perpendicular magnetic anisotropy (PMA) features of ultrathin [Co/Pd]{sub 3} multilayers (MLs) employing a NiO{sub x} insertion layer at high annealing temperatures. Thermally enhanced PMA in [Co/Pd]{sub 3}/NiO{sub x} (capping layer) MLs were achieved at a specific capping layer thickness, while no PMA responses were observed for a NiO{sub x} (buffer layer)/[Co/Pd]{sub 3} ML, regardless of NiO{sub x} thickness. X-ray diffraction observations, including rocking curves, identified the relatively different crystalline characteristics of the NiO{sub x} capping and buffer layers. Origin of the enhanced PMAs of [Co/Pd]{sub 3} MLs containing a NiO{sub x} capping layer is described based on the NiO{sub x} capping effect possibly providing additional Co/Oxide i-PMA under high-temperature annealing.

  18. Control of magnetization reversal in oriented strontium ferrite thin films

    SciTech Connect

    Roy, Debangsu Anil Kumar, P. S.

    2014-02-21

    Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

  19. Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode

    NASA Astrophysics Data System (ADS)

    Vautrin, C.; Lu, Y.; Robert, S.; Sala, G.; Lenoble, O.; Petit-Watelot, S.; Devaux, X.; Montaigne, F.; Lacour, D.; Hehn, M.

    2016-09-01

    We have studied a magnetic tunnel transistor (MTT) structure based on a MgO tunnelling barrier emitter and a [Co/Ni]5/Cu multilayer base on a Si (0 0 1) substrate. Evident links between the Schottky barrier preparation techniques and the properties of perpendicular magnetic anisotropy (PMA) in the [Co/Ni] multilayer have been revealed by combined x-ray diffraction and magnetometry analyses. The Si surface treated by hydrofluoric acid (HF) is found to favour a Cu [1 0 0] texture growth which is detrimental to the [Co/Ni]5 PMA properties. However, a Ta layer insertion can restore the [1 1 1] texture required for the PMA appearance. By carefully engineering the base crystallographic texture structure, we obtain both a good quality of Schottky barrier and PMA property; a magneto-current ratio of 162% has been measured for MTTs with a spin-valve base composed of one magnetic layer having in-plane anisotropy and another one with out-of-plane anisotropy.

  20. Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence

    SciTech Connect

    Meng, Hao; Naik, Vinayak Bharat; Liu, Ruisheng; Han, Guchang

    2014-07-28

    We report an investigation of electric-field (EF) control of spin re-orientation as functions of the thicknesses of CoFeB free layer (FL) and MgO layer in synthetic-antiferromagnetic pinned magnetic tunnel junctions with perpendicular magnetic anisotropy. It is found that the EF modulates the coercivity (Hc) of the FL almost linearly for all FL thicknesses, while the EF efficiency, i.e., the slope of the linearity, increases as the FL thickness increases. This linear variation in Hc is also observed for larger MgO thicknesses (≥1.5 nm), while the EF efficiency increases only slightly from 370 to 410 Oe nm/V when MgO thickness increases from 1.5 to 1.76 nm. We have further observed the absence of quasi-DC unipolar switching. We discuss its origin and highlight the underlying challenges to implement the EF controlled switching in a practical magnetic memory.

  1. Tunable ferromagnetic and antiferromagnetic interfacial exchange coupling in perpendicularly magnetized L1{sub 0}-MnGa/Co{sub 2}FeAl Heusler bilayers

    SciTech Connect

    Ma, Q. L. Mizukami, S.; Zhang, X. M.; Miyazaki, T.

    2014-12-21

    In this work, we report a tailorable exchange coupling (J{sub ex}) at the Mn{sub 62}Ga{sub 38}/Co{sub 2}FeAl interface, where Mn{sub 62}Ga{sub 38} and Co{sub 2}FeAl alloys are tetragonal Heusler alloy with high perpendicular magnetic anisotropy and typical cubic Heusler alloy with soft magnetism, respectively. As the post annealing temperature (T{sub a}) is lower than 375 °C, the J{sub ex} is ferromagnetic with strength controllable from 7.5 to 0.5 erg/cm{sup 2}. Interestingly, as T{sub a} increases higher than 400 °C, an antiferromagnetic J{sub ex} of −5.5 erg/cm{sup 2} is observed. The ferromagnetic/antiferromagnetic transition is further evidenced by the spin dependent transport property of the magnetic tunnel junctions with Mn{sub 62}Ga{sub 38}/Co{sub 2}FeAl as electrode. Based on structure characterization, the variation of J{sub ex} during annealing is discussed.

  2. Detecting an in-plane rotation of magnetization in GdFeCo films

    NASA Astrophysics Data System (ADS)

    Hoveyda, Farzaneh; Smadici, Serban

    It is often important to distinguish between magnetization reversal by coherent rotation in different planes and domain wall motion. Magnetization curves were measured at different temperatures with magneto-optical Kerr Effect in longitudinal (L-MOKE) and polar (P-MOKE) geometries on sputter-deposited GdxFeyCo1 - x - y (GFC) films of variable thickness. Depending on the probed region, the L-MOKE signal measured with decreasing external field Hext was found to be lower than the signal observed with increasing Hext (negative remanence magnetization). We show that this is due to a contribution to the signal of M⊥ , the magnetization component perpendicular to the scattering plane. This identifies the type of reversal in these GFC films as in-plane coherent rotation of magnetization. M⊥ is also proportional to the torque. Azimuthal measurements on Co2FeAl samples showed a regular variation of the MOKE signal, in one possible application of these observations to torque measurements. Work supported by the University of Louisville Research Foundation.

  3. Interplay of epitaxial strain and perpendicular magnetic anisotropy in insulating ferromagnetic Ga1-xMnxP1-yNy

    NASA Astrophysics Data System (ADS)

    Stone, P. R.; Dreher, L.; Beeman, J. W.; Yu, K. M.; Brandt, M. S.; Dubon, O. D.

    2010-05-01

    We demonstrate a direct connection between the magnetic easy axis in Mn-doped GaP and epitaxial strain by a combined ferromagnetic resonance, x-ray diffraction and superconducting quantum interference device magnetometry study. The magnetic easy axis of Ga1-xMnxP is gradually rotated from the in-plane [01¯1] direction toward the film normal [100] through alloying with isovalent N which changes the strain state of the film from compressive to tensile. For a nearly lattice-matched film the strain-related component to the out-of-plane uniaxial anisotropy field is close to zero. Both in-plane and out-of-plane magnetization reversal processes are explored by a simple model that considers the combination of coherent spin rotation and noncoherent spin switching. We use our results to estimate domain-wall sizes and energetics, which have yet to be directly measured in this materials system. The band structure and electrical properties of Ga1-xMnxP imply that holes localized within a Mn-derived impurity band are capable of mediating the same anisotropic exchange interactions as the itinerant carriers in the canonical Ga1-xMnxAs system.

  4. The role of microstructural phenomena in magnetic thin films

    SciTech Connect

    Laughlin, D.E.; Lambeth, D.N.

    1992-01-01

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  5. The role of microstructural phenomena in magnetic thin films

    SciTech Connect

    Laughlin, D.E.; Lambeth, D.N.

    1992-12-31

    The subject is germane to magnetic recording media. Results during the first 2 years are presented under the following headings: atomic resolution TEM of CoNiCr films; CoNiCr and CoCrTa thin films; development of texture; and CoSm/Cr thin films. The HREM results showed that defects in Co-based films may be responsible for higher coercivity. Findings are presented on the effects of Cr interlayers on the microstructure of the second Co-based film in Co/Cr/Co/Cr multilayer films. Proposed research plans are outlined.

  6. Structure and magnetic properties of L1{sub 0}-FePt thin films on TiN/RuAl underlayers

    SciTech Connect

    Yang En; Ratanaphan, Sutatch; Zhu Jiangang; Laughlin, David E.

    2011-04-01

    Highly ordered L1{sub 0} FePt-oxide thin films with small grains were prepared by using a RuAl layer as a grain size defining seed layer along with a TiN barrier layer. Different HAMR (Heat Assisted Magnetic Recording) favorable underlayers were studied to encourage perpendicular texture and preferred microstructure. It was found that the epitaxial and small grain growth from the RuAl/TiN underlayer results in small and uniform grains in the FePt layer with perpendicular texture. By introducing the grain size defining underlayers, the FePt grain size can be reduced from 30 to 6 nm with the same volume fraction (9%) of SiO{sub 2} in the film, excellent perpendicular texture, and very high order parameter at 520 deg. C.

  7. On the existence of Weibel instability in a magnetized plasma. II. Perpendicular wave propagation: The ordinary mode

    SciTech Connect

    Ibscher, D.; Lazar, M.; Schlickeiser, R.

    2012-07-15

    In a magnetized plasma with a temperature anisotropy T{sub ||}>T{sub Up-Tack} (where || and Up-Tack denote directions with respect to the uniform magnetic field B{sub 0}), the nonresonant Weibel instability can develop and destabilize purely growing, ordinary plasma modes (k=k{sub Up-Tack }). This paper presents a rigorous extended analysis of this instability on the basis of a new threshold b{sub 0}(k), which enables to determine the instability conditions as well as the upper limits of the growth rates. Accurate analytical forms of the threshold conditions are provided here for the first time and for the full physical range of the temperature anisotropy and the parallel plasma beta. The marginal and threshold conditions for the plasma parameters, which directly lead to an instability of the ordinary mode, are explicitly derived numerically and analytically. The new analytical tools developed here provide premises for a comprehensive investigation of the interplay of this instability with the firehose instability, as they both can develop in the same conditions.

  8. Tailoring Curie temperature and magnetic anisotropy in ultrathin Pt/Co/Pt films

    NASA Astrophysics Data System (ADS)

    Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S.

    2016-05-01

    The dependence of perpendicular magnetization and Curie temperature (Tc) of Pt/Co/Pt thin films on the thicknesses of Pt seed (Pts) and presence of Ta buffer layer has been investigated in this work. Pt and Co thicknesses were varied between 2 to 8 nm and 0.35 to 1.31 nm (across the spin reorientation transition thickness) respectively and the Tc was measured using SQUID magnetometer. We have observed a systematic dependence of Tc on the thickness of Pts. For 8nm thickness of Pts the Co layer of 0.35nm showed ferromagnetism with perpendicular anisotropy at room temperature. As the thickness of the Pts was decreased to 2nm, the Tc went down below 250K. XRD data indicated polycrystalline growth of Pts on SiO2. On the contrary Ta buffer layer promoted the growth of Pt(111). As a consequence Ta(5nm)/Pt(3nm)/Co(0.35nm)/Pt(2nm) had much higher Tc (above 300K) with perpendicular anisotropy when compared to the same stack without the Ta layer. Thus we could tune the ferromagnetic Tc and anisotropy by varying the Pts thickness and also by introducing Ta buffer layer. We attribute these observations to the micro-structural evolution of Pts layer which hosts the Co layer.

  9. Electrodeposition and magnetic properties of FeCo alloy films

    NASA Astrophysics Data System (ADS)

    Zhou, Dong; Zhou, Mingge; Zhu, Minggang; Yang, Xu; Yue, Ming

    2012-04-01

    FeCo alloys thin films have been successfully electrodeposited on Ag films. The morphology, structure, composition, and magnetic property of the FeCo films were characterized by scanning electron microscopy, x-ray diffraction, induction-coupled plasma spectrometry, vibrating sample magnetometer and network analyzer. The use of reverse pulse current in the process of electrodepostion can reduce the surface roughness obviously. The effects of anodic current density and thickness are studied. The results show that the film fabricated under appropriate conditions has low coercivity and excellent high-frequency magnetic property.

  10. Correlation between magnetization performance and magnetic microstructure of patterned permalloy films fabricated by microcontact printing

    SciTech Connect

    Sannomiya, Takumi; Shi Ji; Nakamura, Yoshio; Nittono, Osamu

    2004-11-01

    Permalloy films were patterned by two simple methods, direct etching and lift-off, which are based on the microcontact printing method. Several kinds of patterns, including chessboard, stripe, grid, and rectangular dot patterns, have been produced. These patterned permalloy films reveal varied magnetization behavior that originate from the differences in the shape of the pattern-consisting elements. The magnetic structure of the chessboard pattern film was investigated by Fresnel and Foucault modes of Lorentz transmission electron microscopy. It is found that the square elements of the patterned film exhibit vortexlike magnetization closures, although some connections between the elements remained due to insufficient etching. The macroscopic magnetization process of the chessboard-patterned film was explained in reference to the in situ magnetization-distribution observation of the specimen along a minor magnetization loop. We also tried to control the rotational sense of the 'vortices' in the square elements by using a gradient field.

  11. Remote Manipulation of Droplets on a Flexible Magnetically Responsive Film

    PubMed Central

    Kim, Jeong Hun; Kang, Seong Min; Lee, Byung Jun; Ko, Hangil; Bae, Won-Gyu; Suh, Kahp Yang; Kwak, Moon Kyu; Jeong, Hoon Eui

    2015-01-01

    The manipulation of droplets is used in a wide range of applications, from lab-on-a-chip devices to bioinspired functional surfaces. Although a variety of droplet manipulation techniques have been proposed, active, fast and reversible manipulation of pure discrete droplets remains elusive due to the technical limitations of previous techniques. Here, we describe a novel technique that enables active, fast, precise and reversible control over the position and motion of a pure discrete droplet with only a permanent magnet by utilizing a magnetically responsive flexible film possessing actuating hierarchical pillars on the surface. This magnetically responsive surface shows reliable actuating capabilities with immediate field responses and maximum tilting angles of ~90°. Furthermore, the magnetic responsive film exhibits superhydrophobicity regardless of tilting angles of the actuating pillars. Using this magnetically responsive film, we demonstrate active and reversible manipulation of droplets with a remote magnetic force. PMID:26648418

  12. Comparison of the microstructure and magnetic properties of strontium hexaferrite films deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates by pulsed laser technique

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.; Ong, C. K.

    2014-01-01

    Strontium hexaferrite SrFe12O19 (SrM) films have been deposited on Al2O3(0001), Si(100)/Pt(111) and Si(100) substrates. The (001) oriented SrFe12O19 films deposited on the Al2O3(0001) and Si(100)/Pt(111) substrates have been confirmed by X-ray diffraction patterns. Higher coercivity in perpendicular direction rather than in-plane direction of the SrM/Al2O3(0001) and SrM/Pt(111) films showed that the films had perpendicular magnetic anisotropy. The (001) orientation and similar microstructure and magnetic properties of the SrM/Al2O3(0001) and SrM/Pt(111) films show the Al2O3(0001) substrate can be replaced by the Si(100)/Pt(111) substrate.

  13. Self-Assembly of Magnetic Nanoparticles at the Surface and Within Block Copolymer Films

    NASA Astrophysics Data System (ADS)

    Xu, Chen; Ohno, Kohji; Composto, Russell

    2007-03-01

    We investigate the self-assembly of magnetic Fe3O4 nanoparticles in thin films of a symmetric block copolymer of poly(styrene-b-methyl methacrylate), PS-b-PMMA (75 kg/mol). The Fe3O4 nanoparticles (4nm) are grafted by poly(methyl methacrylate) (PMMA) (2.7 kg/mol) brushes to improve their compatibility. The weight percent of Fe3O4 in PS-b-PMMA is 1, 4 and 10. The Fe3O4 reside at the intermaterial dividing surface and also form small disk-like aggregates within the PMMA phase. The addition of Fe3O4 slows down the transition from perpendicular to parallel lamellae morphology at the surface and slowing down increases as weight percent Fe3O4 increases. Using cross-sectional TEM, nanoparticles are found to be rejected from the parallel lamellae and gather preferentially within the perpendicular lamellae. These studies demonstrate that the Fe3O4 particles influence thin film morphology and visa versa. Because of widespread interest in nanodevices, this study shows that arrays of functional nanoparticles can be formed using block copolymer templates.

  14. Magneto-optic superlattice thin films: Fabrication, structural and magnetic characterization

    NASA Technical Reports Server (NTRS)

    Falco, C. M.; Engel, B. N.; Vanleeuwen, R. A.; Yu, J.

    1993-01-01

    During this quarter studies were extended to determine the electronic contribution to the perpendicular interface anisotropy in Co-based multilayers. Using in situ Kerr effect measurements, the influences of different transition metals (TM = Ag, Au, Cu, and Pd) on the magnetic properties of single-crystal Co films grown on Pd (111) and Au (111) surfaces are investigated. Last quarter the discovery of a large peak in the perpendicular anisotropy when approximately one monolayer of Cu or Ag is deposited on the Co surface was reported. We now have added a computer-controlled stepper-motor drive to our MBE sample transfer mechanism. The motor allows us to move the sample at a constant velocity from behind a shutter during deposition. The film, therefore, is deposited as a wedge with a linear variation of thickness across the substrate. In this way, a continuous range of coverage on a single sample is studied. The stepper motor also provides the necessary control for precisely positioning the sample in the laser beam for Kerr effect measurements at the different coverages.

  15. Piezoelectric Characteristics of Polymer Film Oriented under a Strong Magnetic Field

    NASA Astrophysics Data System (ADS)

    Nakiri, Takuo; Imoto, Kenji; Ishizuka, Masayuki; Okamoto, Satoshi; Date, Munehiro; Uematsu, Yoshiko; Fukada, Eiichi; Tajitsu, Yoshiro

    2004-09-01

    The possibility has been indicated that polymers with helical chirality, such as poly-γ-benzyl-L-glutamate (PBLG) and poly-L-lactic acid (PLLA), exhibit a large shear piezoelectric constant. To attempt the realization of a PBLG membrane with a large piezoelectric constant, we fabricated the PBLG membrane oriented by magnetic field force. Concretely, the PBLG membranes were casted from 1,2-dichloroethane solution with various PBLG concentrations under the magnetic field generation equipment incorporating a superconducting magnet. First, the orientation of the chain molecules of the PBLG membranes obtained was observed macroscopically by means of a polarizing microscope (POM). The orientation of the chain molecules of the PBLG membranes was recognized for the case of casting from the PBLG 1,2-dichloroethane solution in the liquid crystal state. Also, from X-ray photograph measurements, it was found that the orientation direction of the chain molecules of PBLG was perpendicular to the magnetic field direction. We then measured the shear piezoelectric constant d14 of the oriented PBLG membranes. With increasing the strength of the applied magnetic field in the casting process for the film preparation, {d14}* of the PBLG membranes obtained increases. Finally, a large piezoelectric constant of 26 pC/N was found in the PBLG membrane. It is assumed that {d14}* is not saturated even at the magnetic field of 10 T.

  16. Enhancement of magnetic anisotropy for L10-(0 0 1) FePt films grown on SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhang, A. M.; Wu, X. S.; Tang, S. L.; Zhou, S. M.

    2016-06-01

    Ordered L10-FePt (0 0 1)-oriented films are deposited on (0 0 1) SrTiO3 by magnetic sputtering. The films are composed of a strained and a relaxed L10-FePt phase. The content of the relaxed phase, the magnetic anisotropy, as well as the perpendicular coercivity of the ordered L10-FePt films increase with increasing the growth temperature. The improvement of the magnetic properties is attributed to the relaxed phase content and the detailed structure variations. Our results show that high quality (0 0 1)-textured granular L10-FePt film may be well combined with the perovskite-like SrTiO3, which might open a roadmap in fabricating oxide-based devices.

  17. Scanning micro-Hall probe mapping of magnetic flux distributions and current densities in YBa2Cu3O7 thin films

    SciTech Connect

    Xing, W.; Heinrich, B.; Zhou, H.; Fife, A.A.; Cragg, A.R.; Grant, P.D. |

    1995-04-01

    Mapping of the magnetic flux density B{sub z} (perpendicular to the film plane) for a YBa2Cu3O7 thin-film sample was carried out using a scanning micro-Hall probe. The sheet magnetization and sheet current densities were calculated from the B{sub z} distributions. From the known sheet magnetization, the tangential (B{sub x,y}) and normal components of the flux density B were calculated in the vicinity of the film. It was found that the sheet current density was mostly determined by 2B{sub x,y}/d, where d is the film thickness. The evolution of flux penetration as a function of applied field will be shown.

  18. Scanning micro-Hall probe mapping of magnetic flux distributions and current densities in YBa2Cu3O7 thin films

    NASA Technical Reports Server (NTRS)

    Xing, W.; Heinrich, B.; Zhou, HU; Fife, A. A.; Cragg, A. R.; Grant, P. D.

    1995-01-01

    Mapping of the magnetic flux density B(sub z) (perpendicular to the film plane) for a YBa2Cu3O7 thin-film sample was carried out using a scanning micro-Hall probe. The sheet magnetization and sheet current densities were calculated from the B(sub z) distributions. From the known sheet magnetization, the tangential (B(sub x,y)) and normal components of the flux density B were calculated in the vicinity of the film. It was found that the sheet current density was mostly determined by 2B(sub x,y)/d, where d is the film thickness. The evolution of flux penetration as a function of applied field will be shown.

  19. Investigation of hard magnetic silicone elastomer thin films

    NASA Astrophysics Data System (ADS)

    Yao, Zhongmei; Fang, Ji; Chen, Jackie C.; Wang, Weisong

    2003-01-01

    The hard magnetic materials with a high remnant magnetic moment, Mr, have the unique advantages that can achieve bi-directional (push-pull) movement in an external magnetic field. This paper presents the results on fabrication and testing of the novel hard magnetic silicone elastomer thin films. The micro-size hard ferrite powder, NdFeB powder and different silicone elastomers have been used to fabricate the various large elongation hard magnetic thin films. The uniform thin films range from 40 μm to 216 μm and they are successfully fabricated. Three different fabrication processing have been investigated and the mechanical properties, like Young"s modulus and deflection force, have been evaluated. The simulation results with ANSYS match the experimental data. In comparison to electrostatic or piezoelectric actuation, the magnetic actuation can provide stronger forces and larger deflections. The large elongation hard magnetic thin film provides an excellent diaphragm material, which plays an important role in the micro pump or valve. This film movement has been tested in the external magnetic field, and proved to have large deflections and high performances.

  20. Thick film magnetic nanoparticulate composites and method of manufacture thereof

    NASA Technical Reports Server (NTRS)

    Ma, Xinqing (Inventor); Zhang, Yide (Inventor); Ge, Shihui (Inventor); Zhang, Zongtao (Inventor); Yan, Dajing (Inventor); Xiao, Danny T. (Inventor)

    2009-01-01

    Thick film magnetic/insulating nanocomposite materials, with significantly reduced core loss, and their manufacture are described. The insulator coated magnetic nanocomposite comprises one or more magnetic components, and an insulating component. The magnetic component comprises nanometer scale particles (about 1 to about 100 nanometers) coated by a thin-layered insulating phase. While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase provides the desired soft magnetic properties, the insulating material provides high resistivity, which reduces eddy current loss.

  1. Positioning X-Ray Film With String And Magnets

    NASA Technical Reports Server (NTRS)

    Larosa, William D.; Anders, Jeffrey E.

    1990-01-01

    Technique devised to position x-ray film in normally inaccessible places for inspection of welded joints. Lead/magnet markers and string attached to ends of strips of x-ray film to facilitate positioning. Fewer shots required than in random trial-and-error sequence, and resulting images more accurate.

  2. Nanosized graphene crystallite induced strong magnetism in pure carbon films.

    PubMed

    Wang, Chao; Zhang, Xi; Diao, Dongfeng

    2015-03-14

    We report strong magnetism in pure carbon films grown by electron irradiation assisted physical vapor deposition in electron cyclotron resonance plasma. The development of graphene nanocrystallites in the amorphous film matrix, and the dependence of the magnetic behavior on amorphous, nanocrystallite and graphite-like structures were investigated. Results were that the amorphous structure shows weak paramagnetism, graphene nanocrystallites lead to strong magnetization, and graphite-like structures corresponded with a lower magnetization. At a room temperature of 300 K, the highest saturation magnetization of 0.37 emu g(-1) was found in the nanosized graphene nanocrystallite structure. The origin of strong magnetism in nanocrystallites was ascribed to the spin magnetic moment at the graphene layer edges.

  3. Magnetization Processes During FM Transitions of Supercooled Er Films

    NASA Astrophysics Data System (ADS)

    Durfee, C. S.; Flynn, C. P.

    2000-03-01

    FM transitions are generally accompanied by dimensional changes of the crystal lattice. In magnetic films, the in-plane dimensional changes are inhibited by clamping to the substrate, creating a rich variety of phenomena (e.g. supercooling, dislocation formation and motion, bowing of dislocations, and altered magnetization processes), which can be directly observed with x-rays. Here we characterize the magnetization processes exhibited by unstrained Er films. Below the Curie temperature, the film exhibits supercooling, remaining in a metastable non-FM state and only relaxing to the FM state when a magnetic field is applied. This occurs by two distinct processes. The first process, which broadens the x-ray line shape, is nucleation and growth of FM domains. The second, which produces no line broadening, is isotropic magnetization of the entire film. Once magnetized, the film remains in the FM state until the temperature is raised several degrees above the Curie temperature, at which point the film relaxes to the non-FM state via one of these two paths. This process depends on the temperature when the field is removed.

  4. Magnetic anisotropy of [Co2MnSi/Pd]n superlattice films prepared on MgO(001), (110), and (111) substrates

    NASA Astrophysics Data System (ADS)

    Matsushita, Naoki; Takamura, Yota; Fujino, Yorinobu; Sonobe, Yoshiaki; Nakagawa, Shigeki

    2015-02-01

    Superlattice films with full-Heusler Co2MnSi (CMS) alloy and Pd layers prepared on Pd-buffered MgO(001), (110), and (111) substrates were investigated. Crystal orientation and epitaxial relationship of Pd and CMS layers were analyzed from x-ray diffraction, pole figure measurements, and transmission electron microscope observation. Formation of the L21-ordered structure in the CMS layers was confirmed by observation of CMS(111) diffraction. Perpendicular magnetic anisotropy (PMA) was obtained in the [CMS (0.6 nm)/Pd (2 nm)]6 superlattice film formed using MgO(111) substrates although other superlattice films prepared using MgO(001) and (110) substrates showed in-plane and isotropic magnetic anisotropy, respectively. The perpendicular magnetic anisotropy energy constant K for the superlattice films prepared using MgO(111) substrate was estimated to be 2.3 Mergs/cm3, and an interfacial anisotropy constant Ki per one CMS-Pd interface in the superlattice films was estimated to be 0.16 ergs/cm2. Ki in superlattice films with various crystal orientations showed positive values, indicating that Pd/CMS interfaces had an ability to induce PMA regardless of their crystal orientation.

  5. Magnetic anisotropy of [Co{sub 2}MnSi/Pd]{sub n} superlattice films prepared on MgO(001), (110), and (111) substrates

    SciTech Connect

    Matsushita, Naoki; Takamura, Yota; Fujino, Yorinobu; Nakagawa, Shigeki; Sonobe, Yoshiaki

    2015-02-09

    Superlattice films with full-Heusler Co{sub 2}MnSi (CMS) alloy and Pd layers prepared on Pd-buffered MgO(001), (110), and (111) substrates were investigated. Crystal orientation and epitaxial relationship of Pd and CMS layers were analyzed from x-ray diffraction, pole figure measurements, and transmission electron microscope observation. Formation of the L2{sub 1}-ordered structure in the CMS layers was confirmed by observation of CMS(111) diffraction. Perpendicular magnetic anisotropy (PMA) was obtained in the [CMS (0.6 nm)/Pd (2 nm)]{sub 6} superlattice film formed using MgO(111) substrates although other superlattice films prepared using MgO(001) and (110) substrates showed in-plane and isotropic magnetic anisotropy, respectively. The perpendicular magnetic anisotropy energy constant K for the superlattice films prepared using MgO(111) substrate was estimated to be 2.3 Mergs/cm{sup 3}, and an interfacial anisotropy constant K{sub i} per one CMS-Pd interface in the superlattice films was estimated to be 0.16 ergs/cm{sup 2}. K{sub i} in superlattice films with various crystal orientations showed positive values, indicating that Pd/CMS interfaces had an ability to induce PMA regardless of their crystal orientation.

  6. Modification of the structural and magnetic properties of granular FePt films by seed layer conditioning

    SciTech Connect

    Wicht, S.; Neu, V.; Schultz, L.; Rellinghaus, B.; Mehta, V.; Jain, S.; Reiner, J.; Mosendz, O.; Hellwig, O.; Weller, D.

    2015-01-07

    The steadily increasing amount of digital information necessitates the availability of reliable high capacity magnetic data storage. Here, future hard disk drives with extended areal storage densities beyond 1.0 Tb/in{sup 2} are envisioned by using high anisotropy granular and chemically L1{sub 0}-ordered FePt (002) perpendicular media within a heat-assisted magnetic recording scheme. Perpendicular texturing of the [001] easy axes of the individual grains can be achieved by using MgO seed layers. It is therefore investigated, if and how an Ar{sup +} ion irradiation of the MgO seed layer prior to the deposition of the magnetic material influences the MgO surface properties and hereby the FePt [001] texture. Structural investigations reveal a flattening of the seed layer surface accompanied by a change in the morphology of the FePt grains. Moreover, the fraction of small second layer particles and the degree of coalescence of the primarily deposited FePt grains strongly increases. As for the magnetic performance, this results in a reduced coercivity along the magnetic easy axis (out of plane) and in enhanced hard axis (in-plane) remanence values. The irradiation induced changes in the magnetic properties of the granular FePt-C films are traced back to the accordingly modified atomic structure of the FePt-MgO interface region.

  7. Modification of crystal anisotropy and enhancement of magnetic moment of Co-doped SnO2 thin films annealed under magnetic field

    PubMed Central

    2014-01-01

    Co-doped SnO2 thin films were grown by sputtering technique on SiO2/Si(001) substrates at room temperature, and then, thermal treatments with and without an applied magnetic field (HTT) were performed in vacuum at 600°C for 20 min. HTT was applied parallel and perpendicular to the substrate surface. Magnetic M(H) measurements reveal the coexistence of a strong antiferromagnetic (AFM) signal and a ferromagnetic (FM) component. The AFM component has a Néel temperature higher than room temperature, the spin axis lies parallel to the substrate surface, and the highest magnetic moment m =7 μB/Co at. is obtained when HTT is applied parallel to the substrate surface. Our results show an enhancement of FM moment per Co+2 from 0.06 to 0.42 μB/Co at. for the sample on which HTT was applied perpendicular to the surface. The FM order is attributed to the coupling of Co+2 ions through electrons trapped at the site of oxygen vacancies, as described by the bound magnetic polaron model. Our results suggest that FM order is aligned along [101] direction of Co-doped SnO2 nanocrystals, which is proposed to be the easy magnetization axis. PMID:25489286

  8. Structural and magnetic properties of Co-C composite films and Co/C multilayer films

    NASA Astrophysics Data System (ADS)

    Shi, J.; Azumi, M.; Nittono, O.

    CoC composite films and Co/C multilayer films have been prepared by a method incorporating ion beam sputtering and plasma chemical vapor deposition. It has been found that the structure and magnetic properties of both the Co-C composite and the Co/C multilayer films depend strongly on the substrate temperature during deposition. The Co-C composite film deposited at room temperature is amorphous, with relatively low saturation magnetization and coercivity. On the other hand, the film deposited at 250 °C is composed of fine Co crystallites separated by amorphous C or Co-C phase. As a result, both the saturation magnetization and coercivity are increased compared with the film deposited at room temperature. When deposited at room temperature, the Co/C multilayer film exhibits good periodicity, with a period of 70 nm (Co: 40 nm, C: 30 nm) and sharp and flat Co-C interfaces. High magnetization (602 emu/cm3) and low coercivity (1.6 Oe) are obtained for such a film. However, increasing the substrate temperature to 250 °C was found to be detrimental to the magnetic properties due to the formation of cobalt carbide at the Co-C interface.

  9. Magnetic properties and magnetic domains of Nd-Fe-B thin films

    SciTech Connect

    Chen, S. L.; Liu, W.; Zhang, Z. D.; Gunaratne, G. H.

    2008-01-15

    Anisotropic Nd-Fe-B thin films are fabricated by direct current magnetron sputtering on Si substrates heated to temperatures over a wide range. Surface morphology and magnetic domains of the Nd-Fe-B thin films prepared at different sputtering temperatures (25-600 deg. C) are observed by a scanning probe microscopy. The magnetic domains exhibit a rich variety of textures, changing from striped via maze to cloudlike as the sputtering temperature is increased. Variations in magnetic domains with substrate temperature are discussed using phase components and magnetic anisotropies of the thin films. In addition, patterns of magnetic domains are analyzed using the 'disorder functions', a set of characterizations of complex patterns with labyrinthine structures. The disorder function {delta}(1) and the structure factor {delta}k do not change appreciably until a substrate temperature of 350 deg. C, but increases significantly beyond 400 deg. C. The disorder in magnetic domains increases with increasing sputtering temperature. A simultaneous enhancement of the anisotropic c texture and the hard-magnetic properties of the thin films are observed. The significant change of the disorder function at T{sub s}=400 deg. C appears to be a precursor to the hardening of the Nd-Fe-B film. The most disordered magnetic domains of the film with the substrate temperature of 600 deg. C correspond to the optimum magnetic properties, with the maximum energy product (BH){sub max} of 22.4 MG Oe.

  10. Magnetism and surface structure of atomically controlled ultrathin metal films.

    SciTech Connect

    Shiratsuchi, Yu.; Yamamoto, M.; Bader, S. D.; Materials Science Division; Osaka Univ.

    2007-01-01

    We review the correlation of magnetism and surface structure in ultrathin metal films, including the tailoring of novel magnetic properties using atomic scale control of the nanostructure. We provide an overview of modern fabrication and characterization techniques used to create and explore these fascinating materials, and highlight important phenomena of interest. We also discuss techniques that control and characterize both the magnetic and structural properties on an atomic scale. Recent advances in the development and applications of these techniques allow nanomagnetism to be investigated in an unprecedented manner. A system cannot necessarily retain a two-dimensional structure as it enters the ultrathin region, but it can transform into a three-dimensional, discontinuous structure due to the Volmer-Weber growth mechanism. This structural transformation can give rise to superparamagnetism. During this evolution, competing factors such as interparticle interactions and the effective magnetic anisotropy govern the magnetic state. These magnetic parameters are influenced by the nanostructure of the film. In particular, controlling the magnetic anisotropy is critical for determining the magnetic properties. Surface effects play especially important roles in influencing both the magnitude and direction of the magnetic anisotropy in ultrathin films. By properly altering the surface structure, the strength and direction of the magnetic anisotropy are controlled via spin-orbit and/or dipole interactions.

  11. Growth-related magnetic and physical structures in CMR films

    SciTech Connect

    Hawley, M.E.; Brown, G.W.; Hundley, M.F.

    1997-09-01

    Scanning tunneling microscopy (STM), atomic force microscopy (AFM), and magnetic force microscopy (MFM) have proven to be powerful tools for revealing property-sensitive structures in magnetic materials. With the renewed interest in perovskite films as materials for read-heads in high density magnetic data storage, the same challenges faced by high temperature superconductor (HTS) film fabrication are repeated for these materials. To begin addressing these challenges, we used vapor phase epitaxy to fabricate La (Sr, Ca,) based manganate films on single crystal perovskite substrates under different conditions and characterized them with scanning probe microscopies, x-ray diffraction, and temperature-dependent magnetization and resistivity measurements (M(T) and {rho}(T)). The as-grown films were polygranular with grain sizes increasing with increasing temperature (T). The post-deposition annealed films consisted of coalesced layers with improved transport properties. The room temperature magnetic structure of the Sr-based films appeared to be related to defects and/or strain.

  12. Electroplated thick-film cobalt platinum permanent magnets

    NASA Astrophysics Data System (ADS)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P.

    2016-10-01

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L10 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25-200 mA/cm2), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L10 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (Br ~0.8 T, Hci ~800 kA/m, squareness close to 0.9, and BHmax of 100 kJ/m3) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm2, pH of 7, and subsequently annealed at 675 °C for 30 min.

  13. Organic Thin Film Magnet of Nickel-Tetracyanoethylene

    SciTech Connect

    Bhatt, Pramod; Yusuf, S. M.

    2011-07-15

    Hybrid organic-inorganic materials consisting of a transition metal and an organic compound, TCNE form a unique class of organic magnets denoted by M(TCNE){sub x}(where M = transition metals, and TCNE = tetracyanoethylene). The organic thin film magnet of nickel-tetracyanoethylene, Ni(TCNE){sub x} is deposited on sputtered clean gold substrate using the physical vapor deposition (PVD) technique under ultra high vacuum (UHV) conditions at room temperature. X-ray photoelectron spectroscopy (XPS) has been used to investigate chemical and electronic properties of Ni(TCNE){sub x} film. XPS derived film thickness and stoichiometry are found to be 6 nm and 1:2 ratio between Ni and TCNE resulting Ni(TCNE){sub 2} film, respectively. In addition, XPS results do not show any signature of the presence of pure metallic Ni or Ni-clustering in the Ni(TCNE){sub x} film.

  14. Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Buda-Prejbeanu, L. D.; Dieny, B.

    2015-09-01

    The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer torques (STT) in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the transformed Landau-Lifshitz-Gilbert (LLG) equation with the STT terms. It is demonstrated that in a pMTJ structure obeying macrospin dynamics, the out-of-plane torque influences the precession frequency, but it does not contribute significantly to the STT switching process (in particular to the switching time and switching current density), which is mostly determined by the in-plane STT contribution. This conclusion is confirmed by finite temperature and finite writing pulse macrospin simulations of the current field switching diagrams. It contrasts with the case of STT switching in in-plane magnetized magnetic tunnel junction (MTJ) in which the field-like term also influences the switching critical current. This theoretical analysis was successfully applied to the interpretation of voltage field STT switching diagrams experimentally measured on pMTJ pillars 36 nm in diameter, which exhibit macrospin behavior. The physical nonequivalence of Landau and Gilbert dissipation terms in the presence of STT-induced dynamics is also discussed.

  15. Laser-Induced Spatiotemporal Dynamics of Magnetic Films.

    PubMed

    Shen, Ka; Bauer, Gerrit E W

    2015-11-01

    We present a theory for the coherent magnetization dynamics induced by a focused ultrafast laser beam in magnetic films, taking into account nonthermal (inverse Faraday effect) and thermal (heating) actuation. The dynamic conversion between spin waves and phonons is induced by the magnetoelastic coupling that allows efficient propagation of angular momentum. The anisotropy of the magnetoelastic coupling renders characteristic angle dependences of the magnetization propagation that are strikingly different for thermal and nonthermal actuation.

  16. Laser-Induced Spatiotemporal Dynamics of Magnetic Films.

    PubMed

    Shen, Ka; Bauer, Gerrit E W

    2015-11-01

    We present a theory for the coherent magnetization dynamics induced by a focused ultrafast laser beam in magnetic films, taking into account nonthermal (inverse Faraday effect) and thermal (heating) actuation. The dynamic conversion between spin waves and phonons is induced by the magnetoelastic coupling that allows efficient propagation of angular momentum. The anisotropy of the magnetoelastic coupling renders characteristic angle dependences of the magnetization propagation that are strikingly different for thermal and nonthermal actuation. PMID:26588408

  17. Magnetic structure and magnetic properties of nanocrystalline and amorphous Fe-Zr-N films

    NASA Astrophysics Data System (ADS)

    Sheftel, Elena N.; Harin, Eugene V.; Tedzhetov, Valentin A.; Kiryukhantsev-Korneev, Philipp V.; Levashov, Evgeny A.; Perov, Nikolai S.; Titova, Alexandra O.

    2016-08-01

    Data on the magnetic structure and magnetic properties of Fe-Zr-N films, which were prepared by reactive magnetron sputtering of a heated target and deposited on glass substrates, are reported. Depending on the Zr content (from 3 to 35 at%), the film compositions are characterized by Zr-to-N (at%) ratio from 0.3 to 36.5. The magnetic properties (saturation magnetization Ms, coercive field Hc) and magnetic structure (effective local magnetic anisotropy field D1/2Ha, grain size 2Rc, effective anisotropy field of stochastic domain D1/2, relative stochastic domain size RL/Rc) of the films are discussed in interrelation with their phase and structural states. The coercive field of the studied ferromagnetic nanocrystalline films was shown to obey the relationship Hc~(2Rc)6 and depends on not only the grain size but also the local magnetic anisotropy field D1/2Ha. As the grain size of ferromagnetic phase decreases, the contribution of the magnetoelastic component to the coercive field decreases. It was shown, by examples of weak ferromagnetic and superparamagnetic films with amorphous and mixed (amorphous+nanocrystalline) structures containing a nonferromagnetic phase, that the magnetic properties reflect the real structural and phase state of the films, which cannot be revealed by the X-ray diffraction analysis.

  18. Magnetism of thin film multilayers: An analogue of interacting platelets

    SciTech Connect

    Felcher, G.P.; Huang, Y.Y.

    1991-11-01

    Progress is being made toward manufacturing materials with magnetic properties tailored to the desired application. This result is reached in several steps, which are monitored with different optical techniques such as polarized neutron reflectometry. First, ferromagnetic, metallic films (of Fe, Co, Ni, Gd), a few nanometers thick, are prepared by vapor deposition. Their magnetization can be tuned by changing the chemistry of thickness of the films, and can be biased by embedding the films into a matrix of antiferromagnetic material. Ensembles of metallic films (multilayers of superlattices) can be created, with a magnetic coupling between adjacent layers regulated by the nature and thickness of the spacer. For increasing spacer thickness, the alignment of neighboring magnetic layers switches between a parallel (F) and an opposite arrangement (AF) in an oscillatory manner. In multilayer structures possessing more than one kind of magnetic atom complex magnetic phase diagrams have been predicted to occur, with properties that are strongly influenced by the presence of a surface. With these characteristics, the phenomenology of magnetic multilayers draws a close similarity to the physics of interacting platelets.

  19. X-ray absorption spectroscopy and magnetic circular dichroism studies of L1{sub 0}-Mn-Ga thin films

    SciTech Connect

    Glas, M. Sterwerf, C.; Schmalhorst, J. M.; Reiss, G.; Ebke, D.; Jenkins, C.; Arenholz, E.

    2013-11-14

    Tetragonally distorted Mn{sub 3−x}Ga{sub x} thin films with 0.1perpendicular magnetic anisotropy and low magnetization and thus have the potential to serve as electrodes in spin transfer torque magnetic random access memory. Because a direct capping of these films with MgO is problematic due to oxide formation, we examined the influence of a CoFeB interlayer and of two different deposition methods for the MgO barrier on the formation of interfacial Mn-O for Mn{sub 62}Ga{sub 38} by element specific X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD). A highly textured L1{sub 0} crystal structure of the Mn-Ga films was verified by X-ray diffraction measurements. For samples with e-beam evaporated MgO barrier no evidence for Mn-O was found whereas in samples with magnetron sputtered MgO, Mn-O was detected, even for the thickest interlayer thickness. Both XAS and XMCD measurements showed an increasing interfacial Mn-O amount with decreasing CoFeB interlayer thickness. Additional element specific full hysteresis loops determined an out-of-plane magnetization axis for the Mn and Co, respectively.

  20. Magnetic properties of hexagonal barium ferrite films on Pt/MgO(111) substrates annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Han, Mangui; Zheng, Liang; Deng, Jiangxia; Zheng, Peng; Wu, Qiong; Deng, Longjiang; Qin, Huibin

    2016-09-01

    In this work, hexagonal barium ferrite thin films have been deposited on Pt/MgO(111) substrates by pulsed laser deposition. The anneal temperature dependence of crystal structures, extents of diffusion and magnetic properties have been studied. X-ray diffraction patterns reveal that the crystal structure changes from the hexagonal to the spinel when the anneal temperature increases. The texture with c-axis perpendicular to the film plane and the small c-axis dispersion angles (△ɵc) have been obtained in the film annealed at 950 °C for 10 h. Both the X-ray photoelectron spectroscopy profiles and energy dispersive spectrometer show that the diffusions of Mg2+and Fe3+cations are more obvious when the annealing temperature is higher than 950 °C. The film annealed at 950 °C show anisotropic and hard magnetic properties. The magnetic properties of film annealed at 1050 °C are soft. In order to study the cation diffusions between thin film and substrate, the concentration profiles of cations (Ba2+, Fe3+, Mg2+) have been measured by XPS for a thin film with a thickness of 130 nm annealed at 950°C and 1050°C, as shown in Fig. 3. When Ta is 950°C, as shown in Fig. 3(a), diffusions between the film and the substrate are scarcely detected. However, obvious inter-diffusions have been found for Mg2+ cation and Fe3+ cation when it is annealed at 1050°C. An obvious diffusion has not been found for Ba2+ cation at both annealing temperatures.

  1. Thin viscous ferrofluid film in a magnetic field

    NASA Astrophysics Data System (ADS)

    Conroy, Devin T.; Matar, Omar K.

    2015-09-01

    We consider a thin, ferrofluidic film flowing down an inclined substrate, under the action of a magnetic field, bounded above by an inviscid gas. Its dynamics are governed by a coupled system of the steady Maxwell's, the Navier-Stokes, and the continuity equations. The magnetization of the film is a function of the magnetic field and may be prescribed by a Langevin function. We make use of a long-wave reduction in order to solve for the dynamics of the pressure and velocity fields inside the film. In addition, we investigate the problem in the limit of a large magnetic permeability. Imposition of appropriate interfacial conditions allows for the construction of an evolution equation for the interfacial shape via use of the kinematic condition. The resultant one-dimensional equations are solved numerically using spectral methods. The magnetic effects give rise to a non-local contribution. We conduct a parametric study of both the linear and nonlinear stabilities of the system in order to evaluate the effects of the magnetic field. Through a linear stability analysis, we verify that the Maxwell's pressure generated from a normally applied magnetic field is destabilizing and can be used to control the size and shape of lobes and collars on the free surface. We also find that in the case of a falling drop, the magnetic field causes an increase in the velocity and capillary ridge of the drop.

  2. Magnetic order and interfacial coupling in oxide thin films and heterostructures probed with soft x-ray dichroism

    SciTech Connect

    Arenholz, Elke; van der Laan, G.

    2009-02-01

    antiferromagnetic order in the LSFO layers which persists up to the bulk Neel temperature near 400 K. Our experiments clearly show that when the magnetization of the LSMO layer is aligned with a magnetic field, a torque is created on the Fe moments in the LSFO layer through exchange coupling at the interface realigning the Fe moments as well. Through comparison with theoretical calculations we are able to show that independent of the LSMO magnetization direction in the sample surface plane, the Fe moments are always oriented perpendicular to the Mn moments. This perpendicular alignment is due to the frustrated exchange coupling at the interface and the weak anisotropy in the thin LSFO layer. Revisiting previous XMLD studies of the Co/NiO(001) interface taking the impact of the crystal electric field on the XMLD into account for the first time, we show that NiO(001) exhibits a crystallographic and magnetic domain structure near the surface that is identical to that of the bulk. Upon Co deposition perpendicular coupling of Co and Ni moments is observed [2, 3] that persists even in the presence of uncompensated interface moments. We also measured the asphericity and the energy splitting of the 4f states in EuO thin films [4] - a material with fascinating properties and of technological importance for spintronics applications - using XMLD. Our measurements, which are confirmed by multiplet calculations, show that there is significant 4f anisotropy. This suggests that pinning of the f states by the local environment becomes feasible and can be tuned by external conditions, chemical doping, and strain for use in device applications. Moreover, we will discuss the impact of epitaxial strain on the magnetic properties and XMLD spectra of complex oxide thin films.

  3. Magnetic properties of pulsed laser deposition-fabricated isotropic Fe-Pt film magnets

    SciTech Connect

    Nakano, M.; Oniki, W.; Yanai, T.; Fukunaga, H.

    2011-04-01

    A high-speed pulsed laser deposition method with the deposition rate of several tens of microns per 1 h enabled us to obtain isotropic Fe-Pt thick film magnets. Increase in the laser power enabled us to obtain as-deposited films with L1{sub 0} ordered phase due to the heat radiation from a target, which means that a substrate heating system and a post-annealing process are not required to achieve hard magnetic properties in the process. Use of an Fe-rich target enhanced the magnetic properties, and as a result (BH){sub max} value exceeded 100 kJ/m{sup 3} in an isotropic Fe-Pt film fabricated at the power of 3 W, which was comparable to those of isotropic Fe-Pt thick film magnets prepared by a sputtering method.

  4. Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

    SciTech Connect

    Akyol, Mustafa; Yu, Guoqiang; Alzate, Juan G.; Upadhyaya, Pramey; Li, Xiang; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.; Ekicibil, Ahmet

    2015-04-20

    We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting  H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.

  5. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOEpatents

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  6. Stabilization of magnetic helix in exchange-coupled thin films

    PubMed Central

    Dzemiantsova, L. V.; Meier, G.; Röhlsberger, R.

    2015-01-01

    Based on micromagnetic simulations, we report on a novel magnetic helix in a soft magnetic film that is sandwiched between and exchange-coupled to two hard magnetic layers with different anisotropies. We show that such a confined helix stays stable without the presence of an external magnetic field. The magnetic stability is determined by the energy minimization and is a result of an internal magnetic field created by the exchange interaction. We show that this internal field stores a magnetic energy density of a few kJ/m3. We also find that it dramatically modifies ferromagnetic resonances, such that the helix can be used as a ferromagnetic resonance filter and a fast acting attenuator. PMID:26537574

  7. Labeled magnetic nanoparticles assembly on polypyrrole film for biosensor applications.

    PubMed

    Fredj, H Ben; Helali, S; Esseghaier, C; Vonna, L; Vidal, L; Abdelghani, A

    2008-05-15

    In recent years, conducting polymers combined with metallic nanoparticles have been paid more attention due to their potential applications in microelectronics, microsystems, optical sensors and photoelectronic chemistry. The work presented in this paper describes the preparation and characterization of a nanocomposite composed by a thin polypyrrole (PPy) film covered with an assembly of magnetic nanoparticles (NPs). The magnetic particles were immobilized on PPy films under appropriate magnetic field in order to control their organization on the PPy film and finally to improve the sensitivity of the system in potential sensing applications. The electrical properties and morphology of the resulting PPy film and the PPy film/NPs composite were characterized with cyclic voltammetry, impedance spectroscopy (IS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and infra-red spectroscopy (IR). By using streptavidin labeled magnetic particles it was possible to functionalize the NPs assembly with biotin-Fab fragment K47 antibody. The designed biosensor had been successfully applied in rapid, simple, and accurate measurements of atrazine concentrations, with a significantly low detection limit of 5 ng/ml. PMID:18585140

  8. Texture in magnetic annealed Terfenol-D films

    NASA Astrophysics Data System (ADS)

    Loveless, M.; Guruswamy, S.

    1996-04-01

    The paper will present an approach to obtaining (111) textured Terfenol-D films suitable for use in magnetostrictive devices. Amorphous thin films of Terfenol-D were rf magnetron sputter deposited on (100) silicon single crystal substrates. A composite target was used to obtain the Terfenol-D films. Samples were subsequently annealed in the range of 300 to 600 °C in the presence of a 2000 Oe magnetic field for times of 15 min to 1 h. X-ray diffraction studies were performed using a Siemens D5000 diffractometer to examine the changes in the preferred crystalline orientation in films with changes in annealing time, annealing temperature, and field orientation. The magnetic properties were examined using a Micromag 2900 alternating gradient magnetometer. Magnetic annealing at 450 °C showed the best combination of magnetic properties. The films exhibited in-plane Hc values in the range of near zero to 350 Oe and Ms values in the range of 200 to 550 emu/cc.

  9. Texture in magnetic annealed Terfenol-D films

    SciTech Connect

    Loveless, M.; Guruswamy, S.

    1996-04-01

    The paper will present an approach to obtaining (111) textured Terfenol-D films suitable for use in magnetostrictive devices. Amorphous thin films of Terfenol-D were rf magnetron sputter deposited on (100) silicon single crystal substrates. A composite target was used to obtain the Terfenol-D films. Samples were subsequently annealed in the range of 300 to 600{degree}C in the presence of a 2000 Oe magnetic field for times of 15 min to 1 h. X-ray diffraction studies were performed using a Siemens D5000 diffractometer to examine the changes in the preferred crystalline orientation in films with changes in annealing time, annealing temperature, and field orientation. The magnetic properties were examined using a Micromag 2900 alternating gradient magnetometer. Magnetic annealing at 450{degree}C showed the best combination of magnetic properties. The films exhibited in-plane {ital H}{sub {ital c}} values in the range of near zero to 350 Oe and {ital M}{sub {ital s}} values in the range of 200 to 550 emu/cc. {copyright} {ital 1996 American Institute of Physics.}

  10. Core-shell nanostructure in a Ge0.9Mn0.1 film observed via structural and magnetic measurements

    NASA Astrophysics Data System (ADS)

    Dalmas de Réotier, P.; Prestat, E.; Bayle-Guillemaud, P.; Boukhari, M.; Barski, A.; Marty, A.; Jamet, M.; Suter, A.; Prokscha, T.; Salman, Z.; Morenzoni, E.; Yaouanc, A.

    2015-06-01

    Manganese-doped germanium films are model systems for the study of nanospinodal decomposition into Mn-rich nanostructures and its influence on the electronic and magnetic properties. Here we study a film of Ge0.9Mn0.1 forming self-organized nanocolumns perpendicular to a Ge substrate with high resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy, bulk magnetization, and muon spin rotation and relaxation (μ SR ) measurements. The Mn-rich nanocolumns approximately form a triangular lattice with no detectable Mn atoms in the matrix. We find that they consist of cores surrounded by shells. The combined analysis of bulk magnetization and μ SR data enables us to characterize the electronic and magnetic properties of both the cores and shells. We argue that the discovered phase separation of the columns between a core and a shell is relevant for other transition-metal-doped semiconductors.

  11. Aging of magnetic properties in MgO films

    SciTech Connect

    Balcells, Ll.; Konstantinovic, Z.; Martinez, B.; Beltran, J. I.; Martinez-Boubeta, C.; Arbiol, J.

    2010-12-20

    In this work we report on the magnetic behavior of MgO thin films prepared by sputtering. A severe aging process of the ferromagnetic properties is detected in magnetic samples exposed to ambient atmosphere. However, ferromagnetism can be successively switched on again by annealing samples in vacuum. We suggest this behavior reflects the key role played by defects in stabilizing ferromagnetism in MgO films and is likely to be closely related to the hydrogen-driven instability of V-type centers in this material.

  12. Magnetic properties of Mn2+: PEO+PVP polymer films

    NASA Astrophysics Data System (ADS)

    Kumar, K. Naveen; Sivaiah, K.; Buddhudu, S.

    2014-04-01

    Polymer blended films of PEO+PVP:Mn2+ ions at in varied concentrations have been synthesized by solution casting method. For these films, structural, thermal & magnetic properties have been carried out successfully and a semicrystalline nature of the polymer films has been confirmed from their XRD. Thermal stability of the films has been investigated based on TG-DTA profiles. Superparamagnetic nature with a weak ferromagnetic signal has been explained using VSM & EPR. The EPR spectra of polymer samples with Mn2+ have exhibited resonance signals. The number of spins and also Zero-field splitting parameter (ZFP) (D) at RT have been evaluated from the intensities of the allowed hyperfine(hf) lines. These polymer films have revealed superparamagnetic nature from their profiles.

  13. Magnetic anisotropy in Terfenol-D thin films (abstract)

    NASA Astrophysics Data System (ADS)

    Su, Q.; Teter, J. P.; Wen, Y.; Cullen, J. R.; Wuttig, M.

    1997-04-01

    Thin-film Terfenol-D has attracted considerable attention for applications as microactuators and sensors. Depending on applications, the magnetic anisotropy plays a key role in physical property control. In this paper, the magnetic anisotropy of sputter-deposited Terfenol-D thin films on single-crystal Si substrates was studied by both dynamic torque and magnetization measurements. The evolution of magnetic anisotropy in the course of annealing treatment was followed by both types of experiments. It was found that there is a strong growth-induced anisotropy in the as-grown amorphous films, which is attributed to Fe-rare-earth bond orientation anisotropy. In samples treated at high temperatures, this growth-induced anistropy is overshadowed by the elastic anisotropy resulting from the substantial stresses in the films of giant magnetostrictive material. Domain patterns of different kinds of anisotropy were also monitored using a magnetic force microscope. The consequences of the growth-induced and elastomagnetic anisotropies to possible applications to microactuation are discussed.

  14. Magnetization and susceptibility of ion-irradiated granular magnetite films

    SciTech Connect

    Jiang, W.; McCloy, J. S.; Lea, A. S.; Sundararajan, J. A.; Yao, Q.; Qiang, Y.

    2011-04-01

    Porous granular films of magnetite (Fe{sub 3}O{sub 4}) with grains of {approx}3 nm in size were prepared using a state-of-the-art nanocluster deposition system. The films are initially superparamagnetic but become magnetized following Si{sup 2+} ion irradiation. A significant increase in the grain size and a dramatic change in the microstructure are observed. There are dipolar interactions between the nanoparticles in both the unirradiated and irradiated films. The in-phase alternating current magnetic susceptibility of the unirradiated film shows a blocking temperature of {approx}150 K, depending on frequency. A broadened Verwey transition for the irradiated film occurs at {approx}75 K, above which the susceptibility exhibits unusual behavior: a nearly linear decrease with decreasing temperature. There are irreversible domain rotations in the irradiated film during zero-field cooling and warming cycles between 10 and 300 K. The observed behavior of the irradiated granular films is quite distinct from that of metallic nanostructures after irradiation, and is due to the dramatic change in microstructures.

  15. Magnetic x-ray dichroism in ultrathin epitaxial films

    SciTech Connect

    Tobin, J.G.; Goodman, K.W.; Cummins, T.R.

    1997-04-01

    The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of high resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction.

  16. Capping layer-tailored interface magnetic anisotropy in ultrathin Co{sub 2}FeAl films

    SciTech Connect

    Belmeguenai, M. Zighem, F.; Chérif, S. M.; Gabor, M. S. Petrisor, T.; Tiusan, C.

    2015-01-14

    Co{sub 2}FeAl (CFA) thin films of various thicknesses (2 nm ≤ d ≤ 50 nm) have been grown on (001) MgO single crystal substrates and then capped with Cr, V, and Ta. Their magnetic and structural properties have been studied by x-ray diffraction (XRD), vibrating sample magnetometry, and broadband microstrip ferromagnetic resonance (MS-FMR). The XRD revealed that the films are epitaxial with the cubic [001] CFA axis normal to the substrate plane and that the chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. The deduced lattice parameters showed that the Cr-capped films exhibit a larger tetragonal distortion, as compared with the films capped with V or Ta. The presence of magnetic dead layers has been observed in CFA samples capped with V and Ta but not in the case of the Cr-capped ones. The effective magnetization, deduced from the fit of MS-FMR measurements, increases (decreases) linearly with the CFA inverse thickness (1/d) for the Cr-capped (Ta-capped) films while it is constant for the V-capped ones. This allows quantifying the perpendicular surface anisotropy coefficients of −0.46 erg/cm{sup 2} and 0.74 erg/cm{sup 2} for Cr and Ta-capped films, respectively. Moreover, the fourfold and the uniaxial anisotropy fields, measured in these films, showed different trends with a respect to the CFA inverse thickness. This allows inferring that a non-negligible part of the fourfold magnetocrystalline term is of interfacial origin.

  17. Computational and experimental investigations of magnetic domain structures in patterned magnetic thin films

    NASA Astrophysics Data System (ADS)

    Li, Yulan; Xu, Ke; Hu, Shenyang; Suter, Jon; Schreiber, Daniel K.; Ramuhalli, Pradeep; Johnson, Bradley R.; McCloy, John

    2015-08-01

    The use of nondestructive magnetic signatures for continuous monitoring of the degradation of structural materials in nuclear reactors is a promising yet challenging application for advanced functional materials behavior modeling and measurement. In this work, a numerical model, which is based on the Landau-Lifshitz-Gilbert equation of magnetization dynamics and the phase field approach, was developed to study the impact of defects such as nonmagnetic precipitates and/or voids, free surfaces and crystal orientation on magnetic domain structures and magnetic responses in magnetic materials, with the goal of exploring the correlation between microstructures and magnetic signatures. To validate the model, single crystal iron thin films (~240 nm thickness) were grown on MgO substrates and a focused ion beam was used to pattern micrometer-scale specimens with different geometries. Magnetic force microscopy (MFM) was used to measure magnetic domain structure and its field-dependence. Numerical simulations were constructed with the same geometry as the patterned specimens and under similar applied magnetic field conditions as tested by MFM. The results from simulations and experiments show that 1) magnetic domain structures strongly depend on the film geometry and the external applied field and 2) the predicted magnetic domain structures from the simulations agree quantitatively with those measured by MFM. The results demonstrate the capability of the developed model, used together with key experiments, for improving the understanding of the signal physics in magnetic sensing, thereby providing guidance to the development of advanced nondestructive magnetic techniques.

  18. One-step synthesis of magnetic chitosan polymer composite films

    NASA Astrophysics Data System (ADS)

    Cesano, Federico; Fenoglio, Gaia; Carlos, Luciano; Nisticò, Roberto

    2015-08-01

    In this study, a magnetic iron oxide-chitosan composite film is synthesized by one-step method and thoroughly investigated in order to better understand its inorganic/organic properties. A deep physico-chemical characterization of the magnetic films has been performed. In particular, the material composition was evaluated by means of XRD and ATR-FTIR spectroscopy, whereas the thermal stability and the subsequent inorganic phase transitions involving iron oxide species were followed by TGA analyses carried out at different experimental conditions (i.e. inert and oxidative atmosphere). The magnetic properties of the films were tested at the bulk and at the surface level, performing respectively magnetization hysteresis curve and magnetic force microscopy (MFM) surface mapping. Results indicate that the synthesized material can be prepared through a very simple synthetic procedure and suggests that it can be successfully applied for instance to environmental applications, such as the adsorption of contaminants from solid and liquid media thanks to its pronounced magnetic properties, which favour its recover.

  19. Formation and Structural Characteristic of Perpendicularly Aligned Boron Nitride Nanosheet Bridges in Polymer/Boron Nitride Composite Film and Its Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Cho, Hong-Baek; Nakayama, Tadachika; Suzuki, Tsuneo; Tanaka, Satoshi; Jiang, Weihua; Suematsu, Hisayuki; Niihara, Koichi

    2011-01-01

    The anisotropic alignment of boron nitride (BN) nanosheets was performed in polysiloxane/BN nanosheet composite film under a DC electric field with a change in polarity. The hexagonal BN nanosheets were dispersed by sonication in a prepolymer mixture of polysiloxane followed by high-speed mixing. The homogeneous suspension was cast onto a spacer of microscale thickness and applied to a high DC electric field while changing polarity before the mixture became cross-linked. Analysis revealed that linearly aligned BN nanosheet (LABN) bridges were fabricated in the composite film while connecting the film planes as bridges. This is for first report on the fabrication of linearly aligned nanosheet bridges inside organic-inorganic hybrid films. The fabricated LABN bridges were attributed to the enhancement in the thermal conductivity of the composite film, and the mechanisms underlying the formation of LABN bridges and heat conduction were discussed.

  20. Perpendicular-Force Latch

    NASA Technical Reports Server (NTRS)

    Mattei, John P.; Buck, Peter A.; Williams, Michael D.

    1990-01-01

    Latching mechanism simultaneously applies force in two perpendicular directions to install or remove electronic-equipment modules. Used to simplify installation and removal of modular equipment where movement restricted by protective clothing as in hazardous environments or where installation and removal to be performed by robots or remote manipulators. Concept adaptable to hydraulic, pneumatic, and mechanical systems.