Atomic scale imaging of competing polar states in a Ruddlesden–Popper layered oxide

PubMed Central

Stone, Greg; Ophus, Colin; Birol, Turan; Ciston, Jim; Lee, Che-Hui; Wang, Ke; Fennie, Craig J.; Schlom, Darrell G.; Alem, Nasim; Gopalan, Venkatraman

2016-01-01

Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden–Popper (RP), An+1BnO3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Srn+1TinO3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure. PMID:27578622

Atomic scale imaging of competing polar states in a Ruddlesden-Popper layered oxide

NASA Astrophysics Data System (ADS)

Stone, Greg; Ophus, Colin; Birol, Turan; Ciston, Jim; Lee, Che-Hui; Wang, Ke; Fennie, Craig J.; Schlom, Darrell G.; Alem, Nasim; Gopalan, Venkatraman

2016-08-01

Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden-Popper (RP), An+1BnO3n+1, thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Srn+1TinO3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases. We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure.

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing.

PubMed

Song, Gwang Yeom; Oh, Chadol; Sinha, Soumyadeep; Son, Junwoo; Heo, Jaeyeong

2017-07-19

Atomic layer deposition was adopted to deposit VO x thin films using vanadyl tri-isopropoxide {VO[O(C 3 H 7 )] 3 , VTIP} and water (H 2 O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO x . The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO 2 and V 2 O 5 phases, respectively. The possible band structures of the crystalline VO 2 and V 2 O 5 thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V 2 O 5 and VO 2 films, respectively.

Normal and Reversed-Phase Thin Layer Chromatography of Green Leaf Extracts

ERIC Educational Resources Information Center

Sjursnes, Birte Johanne; Kvittingen, Lise; Schmid, Rudolf

2015-01-01

Introductory experiments of chromatography are often conducted by separating colored samples, such as inks, dyes, and plant extracts, using filter paper, chalk, or thin layer chromatography (TLC) plates with various solvent systems. Many simple experiments have been reported. The relationship between normal chromatography and reversed-phase…

Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buršík, J., E-mail: bursik@iic.cas.cz; Kužel, R.; Knížek, K.

2013-07-15

Thin films of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO{sub 3}(1 1 1) (ST) single crystal substrates using epitaxial SrFe{sub 12}O{sub 19} (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature rampmore » were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO{sub 3} substrate and both hexaferrite phases. - Graphical abstract: XRD pole figure and AFM patterns of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} thin film epitaxially grown on SrTiO{sub 3}(1 1 1) single crystal using seeding layer templating. - Highlights: • Single phase Y-type hexagonal ferrite thin films were prepared by CSD method. • Seed M layer breaks into isolated single crystal islands and serves as a template. • Large seed grains grow by consuming the grains within the bulk of recoated film. • We explained the observed orientation relation of epitaxial domains. • Epitaxial growth on SrTiO{sub 3}(1 1 1) with relation (0 0 1){sub M,Y}//(1 1 1){sub ST}+[1 0 0]{sub M,Y}//[2 −1 −1]{sub ST}.« less

Ultra-thin, single-layer polarization rotator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, T. V.; Truong, V. V., E-mail: Truong.Vo-Van@Concordia.Ca; Do, P. A.

We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 10{sup 3} when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD

NASA Astrophysics Data System (ADS)

Kim, Doyoung; Kang, Hyemin; Kim, Jae-Min; Kim, Hyungjun

2011-02-01

Zinc oxide (ZnO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD) using oxygen plasma as a reactant and the properties were compared with those of thermal atomic layer deposition (TH-ALD) ZnO thin films. While hexagonal wurzite phase with preferential (0 0 2) orientation was obtained for both cases, significant differences were observed in various aspects of film properties including resistivity values between these two techniques. Photoluminescence (PL) measurements have shown that high resistivity of PE-ALD ZnO thin films is due to the oxygen interstitials at low growth temperature of 200 °C, whose amount decreases with increasing growth temperature. Thin film transistors (TFT) using TH- and PE-ALD ZnO as an active layer were also fabricated and the device properties were evaluated comparatively.

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE PAGES

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo; ...

2016-01-19

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

The effect of TiO2 phase on the surface plasmon resonance of silver thin film

NASA Astrophysics Data System (ADS)

Hong, Ruijin; Jing, Ming; Tao, Chunxian; Zhang, Dawei

2016-10-01

A series of silver films with various thicknesses were deposited on TiO2 covered silica substrates by magnetron sputtering at room temperature. The effects of TiO2 phase on the structure, optical properties and surface plasmon resonance of silver thin films were investigated by x-ray diffraction, optical absorption and Raman scattering measurements, respectively. By adjusting the silver layer thickness, the resonance wavelength shows a redshift, which is due to a change in the electromagnetic field coupling strength from the localized surface plasmons excited between the silver thin film and TiO2 layer. Raman scattering measurement results showed that optical absorption plays an important role in surface plasmon enhancement, which is also related to different crystal phase.

Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

DOEpatents

Wu, Xuanzhi; Sheldon, Peter

2000-01-01

A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, P.; Sengupta, D.; CSIR-Central Mechanical Engineering Research Institute, Academy of Scientific and Innovative Research

Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effectmore » of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.« less

Oxide-free aC/Zr0.65Al0.075Cu0.275/aC phase plates for transmission electron microscopy.

PubMed

Dries, M; Obermair, M; Hettler, S; Hermann, P; Seemann, K; Seifried, F; Ulrich, S; Fischer, R; Gerthsen, D

2018-06-01

Thin-film phase plates (PP) have become a valuable tool for the imaging of organic objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon (aC), which undergoes rapid aging under intense illumination with high-energy electrons. The limited lifetime of aC film PPs calls for alternative PP materials with improved material stability. This work presents thin-film PPs fabricated from the metallic glass alloy Zr 0.65 Al 0.075 Cu 0.275 (ZAC), which was identified as a promising PP material with beneficial properties, such as a large inelastic mean free path. An adverse effect of the ZAC alloy is the formation of a surface oxide layer in ambient air, which reduces the electrical conductivity and causes electrostatic charging in the electron beam. To avoid surface oxidation, the ZAC alloy is enclosed by thin aC layers. The resulting aC/ZAC/aC layer system is used to fabricate Zernike and Hilbert PPs. Phase-contrast TEM imaging is demonstrated for a sample of carbon nanotubes, which show strong contrast enhancement in PP TEM images. Copyright © 2018 Elsevier B.V. All rights reserved.

Atomic scale imaging of competing polar states in a Ruddlesden–Popper layered oxide

DOE PAGES

Stone, Greg; Ophus, Colin; Birol, Turan; ...

2016-08-31

Layered complex oxides offer an unusually rich materials platform for emergent phenomena through many built-in design knobs such as varied topologies, chemical ordering schemes and geometric tuning of the structure. A multitude of polar phases are predicted to compete in Ruddlesden-Popper (RP), A n+1 B n O 3n+1 , thin films by tuning layer dimension (n) and strain; however, direct atomic-scale evidence for such competing states is currently absent. Using aberration-corrected scanning transmission electron microscopy with sub-Ångstrom resolution in Sr n+1 Ti n O 3n+1 thin films, we demonstrate the coexistence of antiferroelectric, ferroelectric and new ordered and low-symmetry phases.more » We also directly image the atomic rumpling of the rock salt layer, a critical feature in RP structures that is responsible for the competing phases; exceptional quantitative agreement between electron microscopy and density functional theory is demonstrated. The study shows that layered topologies can enable multifunctionality through highly competitive phases exhibiting diverse phenomena in a single structure.« less

Chiral magnetic conductivity and surface states of Weyl semimetals in topological insulator ultra-thin film multilayer.

PubMed

Owerre, S A

2016-06-15

We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, [Formula: see text], and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for [Formula: see text], the tunneling parameter [Formula: see text] changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Self-assembly of dodecaphenyl POSS thin films

NASA Astrophysics Data System (ADS)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Transient phases during fast crystallization of organic thin films from solution

NASA Astrophysics Data System (ADS)

Wan, Jing; Li, Yang; Ulbrandt, Jeffrey G.; Smilgies, Detlef-M.; Hollin, Jonathan; Whalley, Adam C.; Headrick, Randall L.

2016-01-01

We report an in situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to ≈93 °C. The layered smectic liquid-crystalline phase of C8-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature >60 °C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s), mobility up to 3.0 cm2/V-s has been observed.

An Improved Method for the Extraction and Thin-Layer Chromatography of Chlorophyll A and B from Spinach

ERIC Educational Resources Information Center

Quach, Hao T.; Steeper, Robert L.; Griffin, William G.

2004-01-01

A simple and fast method, which resolves chlorophyll a and b from spinach leaves on analytical plates while minimizing the appearance of chlorophyll degradation products is shown. An improved mobile phase for the Thin-layer chromatographic analysis of spinach extract that allows for the complete resolution of the common plant pigments found in…

Aqueous Solution-Phase Selenized CuIn(S,Se)2 Thin Film Solar Cells Annealed under Inert Atmosphere.

PubMed

Oh, Yunjung; Yang, Wooseok; Kim, Jimin; Woo, Kyoohee; Moon, Jooho

2015-10-14

A nonvacuum solution-based approach can potentially be used to realize low cost, roll-to-roll fabrication of chalcopyrite CuIn(S,Se)2 (CISSe) thin film solar cells. However, most solution-based fabrication methods involve highly toxic solvents and inevitably require sulfurization and/or postselenization with hazardous H2S/H2Se gases. Herein, we introduce novel aqueous-based Cu-In-S and Se inks that contain an amine additive for producing a high-quality absorber layer. CISSe films were fabricated by simple deposition of Cu-In-S ink and Se ink followed by annealing under an inert atmosphere. Compositional and phase analyses confirmed that our simple aqueous ink-based method facilitated in-site selenization of the CIS layer. In addition, we investigated the molecular structures of our aqueous inks to determine how crystalline chalcopyrite absorber layers developed without sulfurization and/or postselenization. CISSe thin film solar cells annealed at 550 °C exhibited an efficiency of 4.55% under AM 1.5 illumination. The low-cost, nonvacuum method to deposit chalcopyrite absorber layers described here allows for safe and simple processing of thin film solar cells.

Sequence control of phase separation and dewetting in PS/PVME blend thin films by changing molecular weight of PS.

PubMed

Xia, Tian; Qin, Yaping; Huang, Yajiang; Huang, Ting; Xu, Jianhui; Li, Youbing

2016-11-28

The morphology evolution mechanism of polystyrene (PS)/poly (vinyl methyl ether) (PVME) blend thin films with different PS molecular weights (M w ) was studied. It was found that the morphology evolution was closely related to the molecular weight asymmetry between PS and PVME. In the film where M w (PS) ≈ M w (PVME), dewetting happened at the interface between the bottom layer and substrate after SD phase separation. While in the film where M w (PS) > M w (PVME), dewetting happened at the interface between the middle PS/PVME blend layer and bottom PVME layer near the substrate prior to phase separation. The different sequences of phase separation and dewetting and different interface for dewetting occurrence were studied by regarding the competitive effects of viscoelasticity contrast between polymer components and preferential wetting between PVME and the substrate. The viscoelastic nature of the PS component played a crucial role in the sequence of phase separation and dewetting.

Method of producing solution-derived metal oxide thin films

DOEpatents

Boyle, Timothy J.; Ingersoll, David

2000-01-01

A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

Unexpected structural and magnetic depth dependence of YIG thin films

NASA Astrophysics Data System (ADS)

Cooper, J. F. K.; Kinane, C. J.; Langridge, S.; Ali, M.; Hickey, B. J.; Niizeki, T.; Uchida, K.; Saitoh, E.; Ambaye, H.; Glavic, A.

2017-09-01

We report measurements on yttrium iron garnet (YIG) thin films grown on both gadolinium gallium garnet (GGG) and yttrium aluminum garnet (YAG) substrates, with and without thin Pt top layers. We provide three principal results: the observation of an interfacial region at the Pt/YIG interface, we place a limit on the induced magnetism of the Pt layer, and confirm the existence of an interfacial layer at the GGG/YIG interface. Polarized neutron reflectometry (PNR) was used to give depth dependence of both the structure and magnetism of these structures. We find that a thin film of YIG on GGG is best described by three distinct layers: an interfacial layer near the GGG, around 5 nm thick and nonmagnetic, a magnetic "bulk" phase, and a nonmagnetic and compositionally distinct thin layer near the surface. We theorize that the bottom layer, which is independent of the film thickness, is caused by Gd diffusion. The top layer is likely to be extremely important in inverse spin Hall effect measurements, and is most likely Y2O3 or very similar. Magnetic sensitivity in the PNR to any induced moment in the Pt is increased by the existence of the Y2O3 layer; any moment is found to be less than 0.02 μB/atom .

Broader color gamut of color-modulating optical coating display based on indium tin oxide and phase change materials.

PubMed

Ni, Zhigang; Mou, Shenghong; Zhou, Tong; Cheng, Zhiyuan

2018-05-01

A color-modulating optical coating display based on phase change materials (PCM) and indium tin oxide (ITO) is fabricated and analyzed. We demonstrate that altering the thickness of top-ITO in this PCM-based display device can effectively change color. The significant role of the top-ITO layer in the thin-film interference in this multilayer system is confirmed by experiment as well as simulation. The ternary-color modulation of devices with only 5 nano thin layer of phase change material is achieved. Furthermore, simulation work demonstrates that a stirringly broader color gamut can be obtained by introducing the control of the top-ITO thickness.

Structural phase study in un-patterned and patterned PVDF semi-crystalline films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramod, K., E-mail: rameshg.phy@pondiuni.edu.in; Gangineni, Ramesh Babu, E-mail: rameshg.phy@pondiuni.edu.in

2014-04-24

This work explores the structural phase studies of organic polymer- polyvinylidene fluoride (PVDF) thin films in semi-crystallized phase and nano-patterned PVDF thin films. The nanopatterns are transferred with the CD layer as a master using soft lithography technique. The semi-crystalline PVDF films were prepared by a still and hot (SH) method, using a homemade spin coater that has the proficiency of substrate heating by a halogen lamp. Using this set up, smooth PVDF thin films in semi-crystalline α-phase were prepared using 2-Butanone as solvent. XRD, AFM and confocal Raman microscope have been utilized to study the structural phase, crystallinity andmore » quality of the films.« less

Analysis of layer-by-layer thin-film oxide growth using RHEED and Atomic Force Microscopy

NASA Astrophysics Data System (ADS)

Adler, Eli; Sullivan, M. C.; Gutierrez-Llorente, Araceli; Joress, H.; Woll, A.; Brock, J. D.

2015-03-01

Reflection high energy electron diffraction (RHEED) is commonly used as an in situ analysis tool for layer-by-layer thin-film growth. Atomic force microscopy is an equally common ex situ tool for analysis of the film surface, providing visual evidence of the surface morphology. During growth, the RHEED intensity oscillates as the film surface changes in roughness. It is often assumed that the maxima of the RHEED oscillations signify a complete layer, however, the oscillations in oxide systems can be misleading. Thus, using only the RHEED maxima is insufficient. X-ray reflectivity can also be used to analyze growth, as the intensity oscillates in phase with the smoothness of the surface. Using x-ray reflectivity to determine the thin film layer deposition, we grew three films where the x-ray and RHEED oscillations were nearly exactly out of phase and halted deposition at different points in the growth. Pre-growth and post-growth AFM images emphasize the fact that the maxima in RHEED are not a justification for determining layer completion. Work conducted at the Cornell High Energy Synchrotron Source (CHESS) supported by NSF Awards DMR-1332208 and DMR-0936384 and the Cornell Center for Materials Research Shared Facilities are supported through DMR-1120296.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Nitroguanidine Wastewater Pollution Control Technology: Phase 2 Wastewater Characterization and Analytical Methods Development for Organics

DTIC Science & Technology

1984-03-01

a....... .6 Thin Layer Chromatographic (TLC) Analyses... o................. ......a... 7 RESULTS AND DISCUSSIONo.....................o...Beckman 5230 UV/visible spectrophotometer was used for colorimetric determinations of urea and cyanamide. Urea was hydrolyzed by urease and...correlation coefficients were 0.9999. THIN LAYER CHROMATOGRAPHIC (TLC) ANALYSES Cellulose plates were used and were developed in the following systems: 3N

Quantitative analysis of psilocybin and psilocin in psilocybe baeocystis (Singer and Smith) by high-performance liquid chromatography and by thin-layer chromatography.

PubMed

Beug, M W; Bigwood, J

1981-03-27

Rapid quantification of psilocybin and psilocin in extracts of wild mushrooms is accomplished by reversed-phase high-performance liquid chromatography with paired-ion reagents. Nine solvent systems and three solid supports are evaluated for their efficiency in separating psilocybin, psilocin and other components of crude mushroom extracts by thin-layer chromatography.

The threshold strength of laminar ceramics utilizing molar volume changes and porosity

NASA Astrophysics Data System (ADS)

Pontin, Michael Gene

It has been shown that uniformly spaced thin compressive layers within a ceramic body can arrest the propagation of an otherwise catastrophic crack, producing a threshold strength: a strength below which the probability of failure is zero. Previous work has shown that the threshold strength increases with both the magnitude of the compressive stress and the fracture toughness of the thin layer material, and finite element analysis predicts that the threshold strength can be further increased when the elastic modulus of the compressive layer is much smaller than the thicker layer. The current work describes several new approaches to increase the threshold strength of a laminar ceramic system. The initial method utilized a molar volume expansion within the thin layers, produced by the tetragonal-to-monoclinic phase transformation of unstabilized zirconia during cooling, in order to produce large compressive stresses within the thin layers. High threshold strengths were measured for this system, but they remained relatively constant as the zirconia content was increased. It was determined that microcracking produced during the transformation reduced the magnitude of the compressive stresses, but may also have served to reduce the modulus of the thin compressive layer, providing an additional strengthening mechanism. The second approach studied the addition of porosity to reduce the elastic modulus of the thin compressive layers. A new processing method was created and analyzed, in which thick layers of the laminate were fabricated by tape-casting, and then dip-coated into a slurry, containing rice starch, to create thin porous compressive layers upon densification. The effects of porosity on the residual compressive stress, elastic modulus, and fracture toughness of the thin layers were measured and calculated, and it was found that the elastic modulus mismatch between the thin and thick layers produced a large strengthening effect for volume fractions of porosity below a critical level. Specimens with greater volume fractions of porosity exhibited complete crack arrest, typically followed by non-catastrophic failure, as cracks initiating in adjacent thick layers coalesced by cracking or delamination along the thin porous layers.

STM study of the Ga thin films grown on Si(111) surface

NASA Astrophysics Data System (ADS)

Tao, Min-Long; Tu, Yu-Bing; Sun, Kai; Ye, Juan; Hao, Shao-Jie; Xiao, Hua-Fang; Wang, Ya-Li; Xie, Zheng-Bo; Wang, Jun-Zhong

2017-09-01

Structural evolution of Ga thin films grown on the Si(111)-√{ 3 } × √{ 3 } -Ga template have been investigated with a low-temperature scanning tunneling microscopy (STM). The first Ga layer exhibits a stripe structure along the base vectors of Si(111) lattices. Individual Ga dimers have been directly visualized from the high-resolution STM images of the first Ga layer. The second Ga layer reveals a pseudo 1×1 structure with respect to the Si(111). A new 5×5 phase has been found in the second Ga layer when annealing the sample to 120 ℃. Further annealing to 150 ℃ leads to the formation of 6.3×6.3 phase, which is more stable than the 5×5 phase. The existences of a variety of superstructures of Ga films demonstrates the delicate balance between the interactions of Si(111)-Ga and Ga-Ga. These results shed important light on the epitaxial growth mechanism of Ga films on semiconductor surfaces.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

PubMed

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-02-25

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

PubMed Central

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-01-01

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value. PMID:28344296

Crystallization dynamics and interface stability of strontium titanate thin films on silicon.

PubMed

Hanzig, Florian; Hanzig, Juliane; Mehner, Erik; Richter, Carsten; Veselý, Jozef; Stöcker, Hartmut; Abendroth, Barbara; Motylenko, Mykhaylo; Klemm, Volker; Novikov, Dmitri; Meyer, Dirk C

2015-04-01

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO 2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO 3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO 3 layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite-type SrTiO 3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO 3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy.

Alkali metal-refractory metal biphase electrode for AMTEC

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor); Bankston, Clyde P. (Inventor); Cole, Terry (Inventor); Khanna, Satish K. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Wheeler, Bob L. (Inventor)

1989-01-01

An electrode having increased output with slower degradation is formed of a film applied to a beta-alumina solid electrolyte (BASE). The film comprises a refractory first metal M.sup.1 such as a platinum group metal, suitably platinum or rhodium, capable of forming a liquid or a strong surface adsorption phase with sodium at the operating temperature of an alkali metal thermoelectric converter (AMTEC) and a second refractory metal insoluble in sodium or the NaM.sup.1 liquid phase such as a Group IVB, VB or VIB metal, suitably tungsten, molybdenum, tantalum or niobium. The liquid phase or surface film provides fast transport through the electrode while the insoluble refractory metal provides a structural matrix for the electrode during operation. A trilayer structure that is stable and not subject to deadhesion comprises a first, thin layer of tungsten, an intermediate co-deposited layer of tungsten-platinum and a thin surface layer of platinum.

Kelvin-Helmholtz instability of a thin liquid sheet: Effect of the gas-boundary layer

NASA Astrophysics Data System (ADS)

Tirumkudulu, Mahesh

2017-11-01

It is well known that when a thin liquid sheet moves with respect to a surrounding gas phase, the liquid sheet is susceptible to the Kelvin-Helmholtz instability. Here, flow in both the liquid and the gas phases are assumed to be inviscid. In this work, we include exactly via a perturbation analysis, the influence of the growing boundary layer in the gas phase in the base flow and show that both temporal and spatial growth rates obtained from the linear stability analysis are significantly reduced due to the presence of the boundary layer. These results are in line with the simulation results of Lozano et al. and Tammisola et al.. We conclude with the implication of these results on the break-up of radially expanding liquid sheets. Funding from IIT Bombay, CSIR India, and Trinity College, Cambridge University is acknowledged.

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

NASA Astrophysics Data System (ADS)

Berthier, R.; Bernier, N.; Cooper, D.; Sabbione, C.; Hippert, F.; Noé, P.

2017-09-01

The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells.

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

PubMed

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and completely overwhelmed the diode current at a measurement temperature of 200 °C. This is due to interlayer diffusion of metal that increases the shunt leakage current and decreases the efficiency of the CZTSe thin film solar cells.

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

PubMed

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Ultrathin phase-change coatings on metals for electrothermally tunable colors

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Ayas, Sencer; Saidzoda, Tohir; Celebi, Kemal; Dana, Aykutlu

2016-08-01

Metal surfaces coated with ultrathin lossy dielectrics enable color generation through strong interferences in the visible spectrum. Using a phase-change thin film as the coating layer offers tuning the generated color by crystallization or re-amorphization. Here, we study the optical response of surfaces consisting of thin (5-40 nm) phase-changing Ge2Sb2Te5 (GST) films on metal, primarily Al, layers. A color scale ranging from yellow to red to blue that is obtained using different thicknesses of as-deposited amorphous GST layers turns dim gray upon annealing-induced crystallization of the GST. Moreover, when a relatively thick (>100 nm) and lossless dielectric film is introduced between the GST and Al layers, optical cavity modes are observed, offering a rich color gamut at the expense of the angle independent optical response. Finally, a color pixel structure is proposed for ultrahigh resolution (pixel size: 5 × 5 μm2), non-volatile displays, where the metal layer acting like a mirror is used as a heater element. The electrothermal simulations of such a pixel structure suggest that crystallization and re-amorphization of the GST layer using electrical pulses are possible for electrothermal color tuning.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration

NASA Astrophysics Data System (ADS)

Dahal, Lila Raj

Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical probes employ multichannel spectral detection for high speed and provide high precision parameters that describe (i) thin film structure, such as layer thicknesses, and (ii) thin film optical properties, such as oscillator variables in analytical expressions for the complex dielectric function. These parameters are critical for evaluating the electronic performance of materials in thin film solar cells and also can be used as inputs for simulating their multilayer optical performance. In this Thesis, the component layers of thin film hydrogenated silicon (Si:H) solar cells in the n-i-p or substrate configuration on rigid and flexible substrate materials have been studied by RTSE and ex-situ mapping SE. Depositions were performed by magnetron sputtering for the metal and transparent conducting oxide contacts and by plasma enhanced chemical vapor deposition (PECVD) for the semiconductor doped contacts and intrinsic absorber layers. The motivations are first to optimize the thin film Si:H solar cell in n-i-p substrate configuration for single-junction small-area dot cells and ultimately to scale-up the optimized process to larger areas with minimum loss in device performance. Deposition phase diagrams for both i- and p -layers on 2" x 2" rigid borosilicate glass substrate were developed as functions of the hydrogen-to-silane flow ratio in PECVD. These phase diagrams were correlated with the performance parameters of the corresponding solar cells, fabricated in the Cr/Ag/ZnO/n/i/ p/ITO structure. In both cases, optimization was achieved when the layers were deposited in the protocrystalline phase. Identical solar cell structures were fabricated on 6" x 6" borosilicate glass with 256 cells followed by ex-situ mapping SE on each cell to achieve better statistics for solar cell optimization by correlating local structural parameters with solar cell parameters. Solar cells of similar structure were also fabricated on flexible polymer substrates in the roll-to-roll configuration. In this configuration as well, RTSE was demonstrated as an effective process monitoring and control tool for thin film photovoltaics.

Thermal conductivity of ZrO2-4mol%Y2O3 thin coatings by pulsed thermal imaging method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Byung-Koog; Sun, Jiangang; Kim, Seongwon

Thin ZrO2-4mol% Y2O3 coatings were deposited onto ZrO2 substrates by electron beam-physical vapor deposition. The coated samples revealed a feather-like columnar microstructure. The main phase of the ZrO2-4mol% Y2O3 coatings was the tetragonal phase. To evaluate the influence of the coating’s thickness on the thermal conductivity of thin ZrO2-4mol% Y2O3 coatings, the pulsed thermal imaging method was employed to obtain the thermal conductivity of the coating layer in the two-layer (coating and substrate) samples with thickness between 56 and 337 micrometers. The thermal conductivity of the coating layer was successfully evaluated and compared well with those obtained by the lasermore » flash method for similar coatings. The thermal conductivity of coatings shows an increasing tendency with an increase in the coating’s thickness.« less

Atomically Phase-Matched Second-Harmonic Generation in a 2D Crystal

DTIC Science & Technology

2016-08-26

thin mate- rials. However, despite the inversion asymmetry of the single layer, the typical crystal stacking restores inversion symmetry for even...typically do not produce SH signals when inversion symmetry is restored in their multilayer counterparts. Group VI transition metal dichalcogenides (TMDCs...group D3h). However, adjacent layers of the 2H are mirrored to restore the inversion symmetry, while the layers in the 3R phase retain the same

All-optically tunable EIT-like dielectric metasurfaces hybridized with thin phase change material layers

NASA Astrophysics Data System (ADS)

Petronijevic, Emilija; Sibilia, Concita

2017-05-01

Electromagnetically induced transparency (EIT), a pump-induced narrow transparency window within the absorption region of a probe, had offered new perspectives in slow-light control in atomic physics. For applications in nanophotonics, the implementation on chip-scaled devices has later been obtained by mimicking this effect by metallic metamaterials. High losses in visible and near infrared range of metal-based metamaterialls have recently opened a new field of all-dielectric metamaterials; a proper configuration of high refractive index dielectric nanoresonators can mimick this effect without losses to get high Q, slow-light response. The next step would be the ability to tune their optical response, and in this work we investigate thin layers of phase change materials (PCM) for all-optical control of EIT-like all-dielectric metamaterials. PCM can be nonvolatively and reversibly switched between two stable phases that differ in optical properties by applying a visible laser pulse. The device is based on Si nanoresonators covered by a thin layer of PCM GeTe; optical and transient thermal simulations have been done to find and optimize the fabrication parameters and switching parameters such as the intensity and duration of the pulse. We have found that the EIT-like response can be switched on and off by applying the 532nm laser pulse to change the phase of the upper GeTe layer. We strongly believe that such approach could open new perspectives in all-optically controlled slow-light metamaterials.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

DOEpatents

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

PubMed Central

Kocer, Hasan; Butun, Serkan; Palacios, Edgar; Liu, Zizhuo; Tongay, Sefaattin; Fu, Deyi; Wang, Kevin; Wu, Junqiao; Aydin, Koray

2015-01-01

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from ~90% to ~30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing. PMID:26294085

Enhancing electrical conductivity of room temperature deposited Sn-doped In2O3 thin films by hematite seed layers

NASA Astrophysics Data System (ADS)

Lohaus, Christian; Steinert, Céline; Deyu, Getnet; Brötz, Joachim; Jaegermann, Wolfram; Klein, Andreas

2018-04-01

Hematite Fe2O3 seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide thin films by room temperature magnetron sputtering. Conductivities of up to σ = 3300 S/cm are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

Ultrahigh PEMFC performance of a thin-film, dual-electrode assembly with tailored electrode morphology.

PubMed

Jung, Chi-Young; Kim, Tae-Hyun; Yi, Sung-Chul

2014-02-01

A dual-electrode membrane electrode assembly (MEA) for proton exchange membrane fuel cells with enhanced polarization under zero relative humidity (RH) is fabricated by introducing a phase-separated morphology in an agglomerated catalyst layer of Pt/C (platinum on carbon black) and Nafion. In the catalyst layer, a sufficient level of phase separation is achieved by dispersing the Pt catalyst and the Nafion dispersion in a mixed-solvent system (propane-1,2,3-triol/1-methyl-2-pyrrolidinone).The high polymer chain mobility results in improved water uptake and regular pore-size distribution with small pore diameters. The electrochemical performance of the dual-film electrode assembly with different levels of phase separation is compared to conventional electrode assemblies. As a result, good performance at 0 % RH is obtained because self-humidification is dramatically improved by attaching this dense and phase-separated catalytic overlayer onto the conventional catalyst layer. A MEA prepared using the thin-film, dual-layered electrode exhibits 39-fold increased RH stability and 28-fold improved start-up recovery time during the on-off operation relative to the conventional device. We demonstrate the successful operation of the dual-layered electrode comprised of discriminatively phase-separated agglomerates with an ultrahigh zero RH fuel-cell performance reaching over 95 % performance of a fully humidified MEA. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomically thin gallium layers from solid-melt exfoliation

PubMed Central

Kochat, Vidya; Samanta, Atanu; Zhang, Yuan; Bhowmick, Sanjit; Manimunda, Praveena; Asif, Syed Asif S.; Stender, Anthony S.; Vajtai, Robert; Singh, Abhishek K.; Tiwary, Chandra S.; Ajayan, Pulickel M.

2018-01-01

Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Using combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin “gallenene” sheets on a silicon substrate, which has two distinct atomic arrangements along crystallographic twin directions of the parent α-gallium. With a weak interface between solid and molten phases of gallium, a solid-melt interface exfoliation technique is developed to extract these layers. Phonon dispersion calculations show that gallenene can be stabilized with bulk gallium lattice parameters. The electronic band structure of gallenene shows a combination of partially filled Dirac cone and the nonlinear dispersive band near the Fermi level, suggesting that gallenene should behave as a metallic layer. Furthermore, it is observed that the strong interaction of gallenene with other 2D semiconductors induces semiconducting to metallic phase transitions in the latter, paving the way for using gallenene as promising metallic contacts in 2D devices. PMID:29536039

Structure and transport in organic semiconductor thin films

NASA Astrophysics Data System (ADS)

Vos, Sandra Elizabeth Fritz

Organic Semiconductors represent an exciting area of research due to their potential application in cheap and flexible electronics. In spite of the abundant interest in organic electronics the electronic transport mechanism remains poorly understood. Understanding the connection between molecular structure, crystal packing, intermolecular interactions and electronic delocalization is an important aspect of improving the transport properties of organics in thin film transistors (TFTs). In an organic thin film transistor, charge carrier transport is believed to occur within the first few monolayers of the organic material adjacent to the dielectric. It is therefore critical to understand the initial stages of film growth and molecular structure in these first few layers and relate this structure to electronic transport properties. The structure of organic films at the interface with an amorphous silicon dioxide ( a-SiO2) dielectric and how structure relates to transport in a TFT is the focus of this thesis. Pentacene films on a-SiO2 were extensively characterized with specular and in-plane X-ray diffraction, and CuKalpha1, and synchrotron radiation. The first layer of pentacene molecules adjacent to the a-SiO2 crystallized in a rectangular unit cell with the long axis of the molecules perpendicular to the substrate surface. Subsequent layers of pentacene crystallized in a slightly oblique in-plane unit cell that evolved as thickness was increased. The rectangular monolayer phase of pentacene did not persist when subsequent layers were deposited. Specular diffraction with Synchrotron radiation of a 160 A pentacene film (˜ 10 layers) revealed growth initiation of a bulk-like phase and persistence of the thin-film phase. Pentacene molecules were more tilted in the bulk-like phase and the in-plane unit cell was slightly more oblique. Pentacene grains began to grow randomly oriented with respect to the substrate surface (out-of-plane) in films near 650 A in thickness. The single crystal bulk phase of pentacene was observed from specular diffraction (CuKalpha1) of a 2.5 mum film. These results suggest that the thickness of pentacene films on a-SiO2 is an important aspect in the comparison of crystal structure and electronic transport.

Synthesis, structure and magnetic properties ofβ-MnO2nanorods

PubMed Central

Kim, HaeJin; Lee, JinBae; Kim, Young-Min; Jung, Myung-Hwa; Jagličić, Z; Umek, P

2007-01-01

We present synthesis, structure and magnetic properties of structurally well-ordered single-crystalline β-MnO2nanorods of 50–100 nm diameter and several µm length. Thorough structural characterization shows that the basic β-MnO2material is covered by a thin surface layer (∼2.5 nm) of α-Mn2O3phase with a reduced Mn valence that adds its own magnetic signal to the total magnetization of the β-MnO2nanorods. The relatively complicated temperature-dependent magnetism of the nanorods can be explained in terms of a superposition of bulk magnetic properties of spatially segregated β-MnO2and α-Mn2O3constituent phases and the soft ferromagnetism of the thin interface layer between these two phases.

Deliquescence and efflorescence of small particles.

PubMed

McGraw, Robert; Lewis, Ernie R

2009-11-21

We examine size-dependent deliquescence/efflorescence phase transformation for particles down to several nanometers in size. Thermodynamic properties of inorganic salt particles, coated with aqueous solution layers of varying thickness and surrounded by vapor, are analyzed. A thin layer criterion (TLC) is introduced to define a limiting deliquescence relative humidity (RH(D)) for small particles. This requires: (1) equality of chemical potentials between salt in an undissolved core, and thin adsorbed solution layer, and (2) equality of chemical potentials between water in the thin layer and vapor phase. The usual bulk deliquescence conditions are recovered in the limit of large dry particle size. Nanosize particles are found to deliquesce at relative humidity just below the RH(D) on crossing a nucleation barrier, located at a critical solution layer thickness. This barrier vanishes precisely at the RH(D) defined by the TLC. Concepts and methods from nucleation theory including the kinetic potential, self-consistent nucleation theory, nucleation theorems, and the Gibbs dividing surface provide theoretical foundation and point to unifying features of small particle deliquescence/efflorescence processes. These include common thermodynamic area constructions, useful for interpretation of small particle water uptake measurements, and a common free-energy surface, with constant RH cross sections describing deliquescence and efflorescence related through the nucleation theorem.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Lipophilicity Assessment of Ruthenium(II)-Arene Complexes by the Means of Reversed-Phase Thin-Layer Chromatography and DFT Calculations

PubMed Central

Shweshein, Khalil Salem A. M.; Andrić, Filip; Radoičić, Aleksandra; Gruden-Pavlović, Maja; Tešić, Živoslav; Milojković-Opsenica, Dušanka

2014-01-01

The lipophilicity of ten ruthenium(II)-arene complexes was assessed by reversed-phase thin-layer chromatography (RP-TLC) on octadecyl silica stationary phase. The binary solvent systems composed of water and acetonitrile were used as mobile phase in order to determine chromatographic descriptors for lipophilicity estimation. Octanol-water partition coefficient, logK OW, of tested complexes was experimentally determined using twenty-eight standard solutes which were analyzed under the same chromatographic conditions as target substances. In addition, ab initio density functional theory (DFT) computational approach was employed to calculate logK OW values from the differences in Gibbs' free solvation energies of the solute transfer from n-octanol to water. A good overall agreement between DFT calculated and experimentally determined logK OW values was established (R 2 = 0.8024–0.9658). PMID:24587761

Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation

NASA Astrophysics Data System (ADS)

Craciun, V.; Singh, R. K.

2000-04-01

Ba0.5Sr0.5TiO3 (BST) thin films grown on Si by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique exhibited significantly higher dielectric constant and refractive index values and lower leakage current densities than films grown by conventional PLD under similar conditions. X-ray photoelectron spectroscopy (XPS) investigations have shown that the surface layer of the grown films contained, besides the usual BST perovskite phase, an additional phase with Ba atoms in a different chemical state. PLD grown films always exhibited larger amounts of this phase, which was homogeneously mixed with the BST phase up to several nm depth, while UVPLD grown films exhibited a much thinner (˜1 nm) and continuous layer. The relative fraction of this phase was not correlated with the amount of C atoms present on the surface. Fourier transform infrared spectroscopy did not find any BaCO3 contamination layer, which was believed to be related to this new phase. X-ray diffraction measurement showed that although PLD grown films contained less oxygen atoms, the lattice parameter was closer to the bulk value than that of UVPLD grown films. After 4 keV Ar ion sputtering for 6 min, XPS analysis revealed a small suboxide Ba peak for the PLD grown films. This finding indicates that the average Ba-O bonds are weaker in these films, likely due to the presence of oxygen vacancies. It is suggested here that this new Ba phase corresponds to a relaxed BST surface layer.

Surface plasmon holographic microscopy for near-field refractive index detection and thin film mapping

NASA Astrophysics Data System (ADS)

Zhao, Jianlin; Zhang, Jiwei; Dai, Siqing; Di, Jianglei; Xi, Teli

2018-02-01

Surface plasmon microscopy (SPM) is widely applied for label-free detection of changes of refractive index and concentration, as well as mapping thin films in near field. Traditionally, the SPM systems are based on the detection of light intensity or phase changes. Here, we present two kinds of surface plasmon holographic microscopy (SPHM) systems for amplitude- and phase-contrast imaging simultaneously. Through recording off-axis holograms and numerical reconstruction, the complex amplitude distributions of surface plasmon resonance (SPR) images can be obtained. According to the Fresnel's formula, in a prism/ gold/ dielectric structure, the reflection phase shift is uniquely decided by refractive index of the dielectric. By measuring the phase shift difference of the reflected light exploiting prism-coupling SPHM system based on common-path interference configuration, monitoring tiny refractive index variation and imaging biological tissue are performed. Furthermore, to characterize the thin film thickness in near field, we employ a four-layer SPR model in which the third film layer is within the evanescent field. The complex reflection coefficient, including the reflectivity and reflection phase shift, is uniquely decided by the film thickness. By measuring the complex amplitude distributions of the SPR images exploiting objective-coupling SPHM system based on common-path interference configuration, the thickness distributions of thin films are mapped with sub-nanometer resolution theoretically. Owing to its high temporal stability, the recommended SPHMs show great potentials for monitoring tiny refractive index variations, imaging biological tissues and mapping thin films in near field with dynamic, nondestructive and full-field measurement capabilities in chemistry, biomedicine field, etc.

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

NASA Astrophysics Data System (ADS)

Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

2017-12-01

A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

Electrodeposition of thin yttria-stabilized zirconia layers using glow-discharge plasma

NASA Astrophysics Data System (ADS)

Ogumi, Zempachi; Uchimoto, Yoshiharu; Tsuji, Yoichiro; Takehara, Zen-ichiro

1992-08-01

A novel process for preparation of thin yttria-stabilized zirconia (YSZ) layers was developed. This process differs from other vapor-phase deposition methods in that a dc bias circuit, separate from the plasma-generation circuit, is used for the electrodeposition process. The YSZ layer was electrodeposited from ZrCl4 and YCl3 on a nonporous calcia-stabilized zirconia substrate. Scanning electron microscopy, electron probe microanalysis, electron spectroscopy for chemical analysis, and x-ray-diffraction measurements confirmed the electrodeposition of a smooth, pinhole-free yttria-stabilized zirconia film of about 3 μm thickness.

Retrieval of phase information in neutron reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

de Haan, V.; van Well, A.A.; Adenwalla, S.

Neutron reflectometry can determine unambiguously the chemical depth profile of a thin film if both phase and amplitude of the reflectance are known. The recovery of the phase information is achieved by adding to the unknown layered structure a known ferromagnetic layer. The ferromagnetic layer is magnetized by an external magnetic field in a direction lying in the plane of the layer and subsequently perpendicular to it. The neutrons are polarized either parallel or opposite to the magnetic field. In this way three measurements can be made, with different (and known) scattering-length densities of the ferromagnetic layer. The reflectivity obtainedmore » from each measurement can be represented by a circle in the (complex) reflectance plane. The intersections of these circles provide the reflectance.« less

Effect of TiN coating on microstructure of Tif/Al composite.

PubMed

Xiu, Z Y; Chen, G Q; Wang, M; Hussain, Murid

2013-02-01

In the present work, Ti fibre reinforced Al matrix composites (Ti(f)/Al) were fabricated by pressure infiltration method. In order to suppress the severe Ti-Al reaction and reduce the formation of brittle TiAl(3) phase, a TiN layer was coated on Ti fibres by an arc ion plating method before composite preparation. A thin TiN layer was coated on the Ti fibre surface, and the maximum and minimum thickness values of layer were about 3.5 and 1μm, respectively. Prefer orientation of TiN on (111) and (200) was found by XRD analysis. A thin and uniform TiAl(3) layer was observed in Ti(f)/Al composite. However, after coated with TiN layer, no significant reaction layer was found in (Ti(f)+TiN)/Al composite. Segregation of Mg element was found in Ti(f)/Al composite, and the presence of TiN layer showed little effect on this behaviour. Due to the large CTE difference between Ti fibre and Al matrix, high density dislocations were observed in the Al matrix. Meanwhile, fine dispersed Mg(2)Al(3) phases were also found in Al matrix. Ti fibre is mainly composed of α- and β-Ti. Small discontinuous needle-like TiAl(3) phases were detected at TiN/Al interface, which implies that the presence of TiN layer between the Ti fibre and Al matrix could effectively hinder the formation of TiAl(3) phases. Copyright © 2012 Elsevier Ltd. All rights reserved.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics.

PubMed

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-25

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS 2 ) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS 2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS 2 thin film by annealing at 450 °C for 1 h in H 2 S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS 2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 10 5 and 10 4 cm -1 in the visible region, respectively. In addition, SnS and SnS 2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS 2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS 2 thin films exhibited on-off drain current ratios of 8.8 and 2.1 × 10 3 and mobilities of 0.21 and 0.014 cm 2 V -1 s -1 , respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS 2 thin films were 6.0 × 10 16 and 8.7 × 10 13 cm -3 , respectively, in this experiment.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

NASA Astrophysics Data System (ADS)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Pulsed Laser Deposited Ferromagnetic Chromium Dioxide thin Films for Applications in Spintronics

NASA Astrophysics Data System (ADS)

Dwivedi, S.; Jadhav, J.; Sharma, H.; Biswas, S.

Stable rutile type tetragonal chromium dioxide (CrO2) thin films have been deposited on lattice-matched layers of TiO2 by KrF excimer laser based pulsed laser deposition (PLD) technique using Cr2O3 target. The TiO2 seed layer was deposited on oxidized Si substrates by the same PLD process followed by annealing at 1100 °C for 4 h. The lattice-matched interfacial layer is required for the stabilization of Cr (IV) phase in CrO2, since CrO2 behaves as a metastable compound under ambient conditions and readily converts into its stable phase of Cr (III) oxide, Cr2O3. Analyses with X-ray diffraction (XRD), Glancing-angle XRD (GIXRD), Raman spectroscopy and grazing-angle Fourier transform infra-red (FTIR) spectroscopy confirm the presence of tetragonal CrO2 phase in the as-deposited films. Microstructure and surface morphology in the films were studied with field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). Electrical and magnetic characterizations of the films were performed at room temperature. Such type of stable half-metallic CrO2 thin films with low field magnetoresistive switching behaviour are in demand for applications as diverse as spin-FETs, magnetic sensors, and magneto-optical devices.

Synthesis of BaW2O7-ethylene glycol inorganic-organic hybrid and its topochemical transformation to thin WS2 nanoplates

NASA Astrophysics Data System (ADS)

Afanasiev, Pavel

2018-02-01

A novel inorganic-organic hybrid barium tungstate - ethylene glycol Ba(C2H6O2)W2O7 phase has been prepared by non-aqueous precipitation and characterized. According to powder X-ray diffraction, the solid has an orthorhombic lattice (a = b = 6.415 Å, c = 13.05 Å) and represents a derivative of the H2W2O7 lamellar acid. The Ba(C2H6O2)W2O7 hybrid material is a layered solid and crystallizes as thin plates, which can be further topotacticaly transformed to few-layer WS2 nanoplates. Tungsten sulfide as obtained possesses high specific surface area and increased defectness of layers. Thin-layer WS2 materials as prepared show advantageous properties as hydrogen evolution electrocatalysts, or in combination with TiO2 as co-catalysts for photo catalytic hydrogen production from methanol.

Shear-induced surface alignment of polymer dispersed liquid crystal microdroplets on the boundary layer

NASA Technical Reports Server (NTRS)

Parmar, D. S.; Singh, J. J.

1993-01-01

Polymer dispersed liquid crystal thin films have been deposited on a glass substrate, utilizing the processes of polymerization and solvent evaporation induced phase separation. Liquid crystal microdroplets trapped on the upper surface of the thin film respond to the shear stress due to air or gas flow on the surface layer. Response to an applied step shear stress input on the surface layer has been measured by measuring the time response of the transmitted light intensity. Initial results on the measurements of the light transmission as a function of the air flow differential pressure indicate that these systems offer features suitable for boundary layer and gas flow sensors.

Thin Film Synthesis of New Complex Titanates.

NASA Astrophysics Data System (ADS)

Salvador, Paul

2008-03-01

Thin film deposition methods allow for one to synthesize rationally specific compositions in targeted crystal structures. Because most of the thermodynamic and kinetic variables that control the range of materials that can be synthesized are unknown for specific compounds/processes, epitaxial stabilization and design of artificially layered crystals are driven through empirical investigations. Using examples taken primarily from the family of complex titanates, which exhibit a range of interesting physicochemical behaviors, the thermodynamic and kinetic factors that control materials design using thin film deposition are discussed. The phase competition between the pyrochlore and the (110) layered perovskite structure in the RE2Ti2O7 family (RE = rare-earth, Bi) will be explored, using pulsed laser deposition as a synthesis method. For RE = Gd, Sm, Nd, and La, the phase stability over a wide range of conditions is dictated entirely by substrate choice, indicating that the free energies of the phases are similar enough such that by controlling nucleation one controls the phase formation. In a related fashion, the growth of AETi2O5 films (AE = Ba or Sr) will be discussed with respect to the formation of single-phase films or films that phase separate into AETiO3 and TiO2. The entire Ba1-xSrxTi2O5 series was grown and will be discussed with respect to growth technique (using MBE and PLD) and/or substrate choice. In this case, rock-salt substrates, which are not expected to interact strongly with any phase in the system, allow for the formation of single-phase films. Finally, several examples will be discussed with respect to the (SrO)m(TiO2)n system, which includes the perovskite SrTiO3 and the Ruddlesden-Popper phase Sr2TiO4, grown using layer-by-layer molecular beam epitaxy. The solid phase epitaxial formation of the perovskite SrTiO3 from superlattices of rock-salt SrO and anatase TiO2 is discussed from both a kinetic and thermodynamic perspective by exploring the growth of a range of m and n values. Using similar arguments for stability, new layered intergrowths in the SrmTiO2+m family are presented and their structures are discussed.

The phase diagram of hydrogen in ultra thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jisrawi, N.M.; Ruckman, M.W.; Reisfeld, G.

This paper, we discuss changes in the phase diagram of hydrogen in both bilayer (i.e. 200-2000 {Angstrom} Nb/100 {Angstrom} Pd on glass) and multilayer configurations. Comparison of x-ray diffraction, electrical resistivity and volumetric measurements of the films before and after hydrogen charging indicate that the phase equilibria between a correlated (high concentration) and a dilute phase of hydrogen in Nb is not sensitive to the number of layers in the films. On the other hand, the experimental methods show different behavior for 200 {Angstrom} thick Nb films and thicker (>400 {Angstrom}) Nb layers. The diffraction results also show that, whilemore » charging with hydrogen, the Nb layers mainly expand along the surface normal of the films, while the Pd layers expand in all directions equally, and transform to the bulk {alpha} phase.« less

Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

PubMed

Park, Seungil; Parida, Bhaskar; Kim, Keunjoo

2013-05-01

We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures. The film samples showed the different infrared absorption spectra of 2,000 and 2,100 cm(-1), which are corresponding to the chemical bonds of SiH and SiH2, respectively. The a-Si:H sample with the relatively high silane concentration provides the absorption peak of SiH bond, but the microc-Si:H sample with the relatively low silane concentration provides the absorption peak of SiH2 bond as well as SiH bond. Furthermore, the microc-Si:H sample showed the Raman spectral shift of 520 cm(-1) for crystalline phase Si bonds as well as the 480 cm(-1) for the amorphous phase Si bonds. These bonding structures are very consistent with the further analysis of the long-wavelength photoconduction tail and the formation of nanocrystalline Si structures. The microc-Si:H thin film solar cell has the photovoltaic behavior of open circuit voltage similar to crystalline silicon thin film solar cell, indicating that microc-Si:H thin film with the mixed phase of amorphous and nanocrystalline structures show the carrier transportation through the channel of nanocrystallites.

Peculiarities of the photochemical processing of relief-phase holograms registered in a thin layer of silver halide emulsion

NASA Astrophysics Data System (ADS)

Brui, E. B.; Galashkina, I. A.

1993-12-01

Peculiarities of the photo-chemical processing of the relief-phase holograms, registered in the layers of argentum-halogenide emulsion PE-2 with the thickness 1 micrometers , are presented in the paper. It was found that in the case of such thickness the tanning processing does not provide the improvement of the maximal relief depth in comparison with the non-tanning process.

Synthesis, characterization and application of Co doped TiO2 multilayer thin films

NASA Astrophysics Data System (ADS)

Khan, M. I.

2018-06-01

To use the visible portion of solar light, 2% cobalt doped TiO2 (Co: TiO2) multilayer thin films having 1, 2, 3 and 4 stacked layers have been deposited on FTO substrates using spray pyrolysis technique. XRD results show that 1 and 2 layers of films have anatase phase. Brookite phase has been appeared at the 3 and 4 layered films. The average grain size of 1, 2, 3 and 4 layers of films are 14.4, 23.5, 29.7 and 33.6 nm respectively. UV-Vis results show that 4th layer film has high absorption in the visible region. The calculated Eg of 1, 2, 3 and 4 layers is 3.54, 3.42, 3.30 and 3.03 eV respectively. The calculated average sheet resistivity of 1, 2, 3 and 4 layers of films is 7.68 × 104, 4.54 × 104, 8.85 × 103 and 7.95 × 102 (ohm-m) respectively, according to four point probe technique. Solar simulator results show that highest solar conversion efficiency (5.6%) has been obtained by using 3 stacked layers photoanode. This new structure in the form of stack layers provides a way to improve the efficiency of optoelectronic devices.

Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide

NASA Astrophysics Data System (ADS)

Biscaras, Johan; Chen, Zhesheng; Paradisi, Andrea; Shukla, Abhay

2015-11-01

Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping density of 4 × 1014 cm-2 in few-layer MoS2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS2 with critical temperature ~10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS2 for samples as thin as bilayers indicates the potential of this approach.

Evolution of magnetization in epitaxial Zn1‑x Fe x O z thin films (0  ⩽  x  ⩽  0.66) grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Brachwitz, Kerstin; Böntgen, Tammo; Lenzner, Jörg; Ghosh, Kartik; Lorenz, Michael; Grundmann, Marius

2018-06-01

We demonstrate the development of phases in Zn1‑xFexOz thin films with 0  ⩽  x  ⩽  0.66, i.e. the end point phases are semiconducting ZnO for x  =  0, and ferrimagnetic zinc ferrite (ZnFe2O4) for x  =  0.66. With increasing x, the x-ray scattering intensity of the structural ZnO wurtzite phase decreases while that of the (1 1 1)-oriented ZnFe2O4 spinel phase increases. For x  >  0.4, single phase spinel layers are obtained. The enhanced formation of the spinel phase is supported by deviations from the usually expected stoichiometric transfer of chemical composition from target to thin film in pulsed laser deposition. We find that all mixed film samples show an excess of iron in relation to the target composition, independent of the growth pressure. The saturation magnetization of the samples increases with x for 0  ⩽  x  ⩽  0.66 and shows a ferrimagnetic behavior. The temperature dependence of magnetization points to Curie temperatures well above 400 K for x  ⩾  0.4. With that, the precise tuning of magnetic performance of the thin layers is possible, yielding a design degree of freedom for application-related requirements.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

Investigation of Thin Layered Cobalt Oxide Nano-Islands on Gold

NASA Astrophysics Data System (ADS)

Bajdich, Michal; Walton, Alex S.; Fester, Jakob; Arman, Mohammad A.; Osiecki, Jacek; Knudsen, Jan; Vojvodic, Aleksandra; Lauritsen, Jeppe V.

2015-03-01

Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER), but the synergistic effect of contact with gold is yet to be fully understood. The synthesis of three distinct types of thin-layered cobalt oxide nano-islands supported on a single crystal gold (111) substrate is confirmed by combination of STM and XAS methods. In this work, we present DFT+U theoretical investigation of above nano-islands using several previously known structural models. Our calculations confirm stability of two low-oxygen pressure phases: (a) rock-salt Co-O bilayer and (b) wurtzite Co-O quadlayer and single high-oxygen pressure phase: (c) O-Co-O trilayer. The optimized geometries agree with STM structures and calculated oxidation states confirm the conversion from Co2+ to Co3+ found experimentally in XAS. The O-Co-O trilayer islands have the structure of a single layer of CoOOH proposed to be the true active phase for OER catalyst. For that reason, the effect of water on the Pourbaix stabilities of basal planes and edge sites is fully investigated. Lastly, we also present the corresponding OER theoretical overpotentials.

Quantitative thin-layer chromatography/mass spectrometry analysis of caffeine using a surface sampling probe electrospray ionization tandem mass spectrometry system.

PubMed

Ford, Michael J; Deibel, Michael A; Tomkins, Bruce A; Van Berkel, Gary J

2005-07-15

Quantitative determination of caffeine on reversed-phase C8 thin-layer chromatography plates using a surface sampling electrospray ionization system with tandem mass spectrometry detection is reported. The thin-layer chromatography/electrospray tandem mass spectrometry method employed a deuterium-labeled caffeine internal standard and selected reaction monitoring detection. Up to nine parallel caffeine bands on a single plate were sampled in a single surface scanning experiment requiring 35 min at a surface scan rate of 44 mum/s. A reversed-phase HPLC/UV caffeine assay was developed in parallel to assess the mass spectrometry method performance. Limits of detection for the HPLC/UV and thin-layer chromatography/electrospray tandem mass spectrometry methods determined from the calibration curve statistics were 0.20 ng injected (0.50 muL) and 1.0 ng spotted on the plate, respectively. Spike recoveries with standards and real samples ranged between 97 and 106% for both methods. The caffeine content of three diet soft drinks (Diet Coke, Diet Cherry Coke, Diet Pepsi) and three diet sport drinks (Diet Turbo Tea, Speed Stack Grape, Speed Stack Fruit Punch) was measured. The HPLC/UV and mass spectrometry determinations were in general agreement, and these values were consistent with the quoted values for two of the three diet colas. In the case of Diet Cherry Coke and the diet sports drinks, the determined caffeine amounts using both methods were consistently higher (by approximately 8% or more) than the literature values.

Free and bound excitons in thin wurtzite GaN layers on sapphire

NASA Astrophysics Data System (ADS)

Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.

1996-05-01

Free and bound excitons have been studied by photoluminescence in thin (0268-1242/11/5/010/img8) wurtzite-undoped GaN, n-type GaN:Si as well as p-type GaN:Mg and GaN:Zn layers grown by metal-organic chemical vapour phase deposition (MOCVD). An accurate value for the free A exciton binding energy and an estimate for the isotropically averaged hole mass of the uppermost 0268-1242/11/5/010/img9 valence band are deduced from the data on undoped samples. The acceptor-doped samples reveal recombination lines which are attributed to excitons bound to 0268-1242/11/5/010/img10 and 0268-1242/11/5/010/img11 respectively. These lines are spectrally clearly separated and the exciton localization energies are in line with Haynes' rule. Whenever a comparison is possible, it is found that the exciton lines in these thin MOCVD layers are ultraviolet-shifted by 20 to 25 meV as compared to quasi-bulk (0268-1242/11/5/010/img12) samples. This effect is interpreted in terms of the compressive hydrostatic stress component which thin GaN layers experience when grown on sapphire with an AlN buffer layer.

Transmittance jump in a thin aluminium layer during laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykovsky, N E; Senatsky, Yu V; Pershin, S M

A jump in the transmittance (from ∼0.1% to ∼50% for ∼1 ns) of an optical gate on a Mylar film (a thin aluminium layer on a Lavsan substrate) irradiated by nanosecond (10{sup -7} – 10{sup -8} s) pulses of a neodymium laser with an intensity up to 0.1 GW cm{sup -2} has been recorded. The mechanism of a fast (10{sup -10} – 10{sup -11} s) increase in the transmittance of the aluminium layer upon its overheating (without boiling) to the metal – insulator phase-transition temperature is discussed. (interaction of laser radiation with matter. laser plasma)

Quantitative thin layer chromatographic multi-sulfonamide screening procedure.

PubMed

Thomas, M H; Soroka, K E; Thomas, S H

1983-07-01

In-situ optical scanning of fluorescamine derivatives on thin layer silica gel plates provides a rapid method for the determination of multiple sulfonamides at levels below 0.1 ppm. Sample preparation is minimal. Homogenized liver or muscle is extracted with ethyl acetate and then back-extracted into 0.2M glycine buffer. After pH adjustment, the extract is washed with hexane and extracted with methylene chloride. The organic phase is evaporated to dryness and reconstituted in methanol. Pre-adsorbent layer silica gel plates are used for chromatography. The method has been applied to residues of sulfamethazine, sulfadimethoxine, sulfathiazole, sulfaquinoxaline, and sulfabromomethazine in cattle, swine, turkey, and duck tissues.

Investigation of ZrO x /ZrC-ZrN/Zr thin-film structural evolution and their degradation using X-ray diffraction and Raman spectrometry

NASA Astrophysics Data System (ADS)

Usmani, B.; Vijay, V.; Chhibber, R.; Dixit, A.

2016-11-01

The thin-film structures of DC/FR magnetron-sputtered ZrO x /ZrC-ZrN/Zr tandem solar-selective coatings are investigated using X-ray diffraction and room-temperature Raman spectroscopic measurements. These studies suggest that the major contribution is coming from h-ZrN0.28, c-ZrC, h-Zr3C2 crystallographic phases in ZrN-ZrC absorber layer, in conjunction with mixed ZrO x crystallographic phases. The change in structure for thermally annealed samples has been examined and observed that cubic and hexagonal ZrO x phase converted partially into tetragonal and monoclinic ZrO x phases, whereas hexagonal and cubic ZrN phases, from absorber layer, have not been observed for these thermally treated samples in air. These studies suggest that thermal treatment may lead to the loss of ZrN phase in absorber, degrading the thermal response for the desired wavelength range in open ambient conditions in contrast to vacuum conditions.

Investigation of Selective Laser Melting Surface Alloyed Aluminium Metal Matrix Dispersive Reinforced Layers

NASA Astrophysics Data System (ADS)

Kamburov, V. V.; Dimitrova, R. B.; Kandeva, M. K.; Sofronov, Y. P.

2018-01-01

The aim of the paper is to investigate the improvement of mechanical properties and in particular wear resistance of laser surface alloyed dispersive reinforced thin layers produced by selective laser melting (SLM) technology. The wear resistance investigation of aluminium matrix composite layers in the conditions of dry friction surface with abrasive particles and nanoindentation tests were carried out. The process parameters (as scan speed) and their impact on the wear resistant layers have been evaluated. The alloyed layers containing metalized SiC particles were studied by Optical and Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray microanalysis (EDX). The obtained experimental results of the laser alloyed thin layers show significant development of their wear resistance and nanohardness due to the incorporated reinforced phase of electroless nickel coated SiC particles.

Polymer-coated compliant receivers for intact laser-induced forward transfer of thin films: experimental results and modelling

NASA Astrophysics Data System (ADS)

Feinaeugle, Matthias; Horak, Peter; Sones, Collin L.; Lippert, Thomas; Eason, Rob W.

2014-09-01

In this study, we investigate both experimentally and numerically laser-induced forward transfer (LIFT) of thin films to determine the role of a thin polymer layer coating the receiver with the aim of modifying the rate of deceleration and reduction of material stress preventing intact material transfer. A numerical model of the impact phase during LIFT shows that such a layer reduces the modelled stress. The evolution of stress within the transferred deposit and the substrate as a function of the thickness of the polymer layer, the transfer velocity and the elastic properties of the polymer are evaluated. The functionality of the polymer layer is verified experimentally by LIFT printing intact 1- m-thick bismuth telluride films and polymeric light-emitting diode pads onto a layer of 12-m-thick polydimethylsiloxane and 50-nm-thick poly(3,4-ethylenedioxythiophene) blended with poly(styrenesulfonate) (PEDOT:PSS), respectively. Furthermore, it is demonstrated experimentally that the introduction of such a compliant layer improves adhesion between the deposit and its substrate.

The finite-size effect in thin liquid crystal systems

NASA Astrophysics Data System (ADS)

Śliwa, I.

2018-05-01

Effects of surface ordering in liquid crystal systems confined between cell plates are of great theoretical and experimental interest. Liquid crystals introduced in thin cells are known to be strongly stabilized and ordered by cell plates. We introduce a new theoretical method for analyzing the effect of surfaces on local molecular ordering in thin liquid crystal systems with planar geometry of the smectic layers. Our results show that, due to the interplay between pair long-range intermolecular forces and nonlocal, relatively short-range, surface interactions, both orientational and translational orders of liquid crystal molecules across confining cells are very complex. In particular, it is demonstrated that the SmA, nematic, and isotropic phases can coexist. The phase transitions from SmA to nematic, as well as from nematic to isotropic phases, occur not simultaneously in the whole volume of the system but begin to appear locally in some regions of the LC sample. Phase transition temperatures are demonstrated to be strongly affected by the thickness of the LC system. The dependence of the corresponding shifts of phase transition temperatures on the layer number is shown to exhibit a power law character. This new type of scaling behavior is concerned with the coexistence of local phases in finite systems. The influence of a specific character of interactions of molecules with surfaces and other molecules on values of the resulting critical exponents is also analyzed.

Quantitative measurement of mean inner potential and specimen thickness from high-resolution off-axis electron holograms of ultra-thin layered WSe2.

PubMed

Winkler, Florian; Tavabi, Amir H; Barthel, Juri; Duchamp, Martial; Yucelen, Emrah; Borghardt, Sven; Kardynal, Beata E; Dunin-Borkowski, Rafal E

2017-07-01

The phase and amplitude of the electron wavefunction that has passed through ultra-thin flakes of WSe 2 is measured from high-resolution off-axis electron holograms. Both the experimental measurements and corresponding computer simulations are used to show that, as a result of dynamical diffraction, the spatially averaged phase does not increase linearly with specimen thickness close to an [001] zone axis orientation even when the specimen has a thickness of only a few layers. It is then not possible to infer the local specimen thickness of the WSe 2 from either the phase or the amplitude alone. Instead, we show that the combined analysis of phase and amplitude from experimental measurements and simulations allows an accurate determination of the local specimen thickness. The relationship between phase and projected potential is shown to be approximately linear for extremely thin specimens that are tilted by several degrees in certain directions from the [001] zone axis. A knowledge of the specimen thickness then allows the electrostatic potential to be determined from the measured phase. By using this combined approach, we determine a value for the mean inner potential of WSe 2 of 18.9±0.8V, which is 12% lower than the value calculated from neutral atom scattering factors. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

A Piezoelectroluminescent Fiber-Optical Sensor for Diagnostics of the 3D Stress State in Composite Structures

NASA Astrophysics Data System (ADS)

Pan'kov, A. A.

2018-05-01

The mathematical model of a piezoelectroluminescent fiber-optical sensor is developed for diagnostics of the 3D stress state of composite structures. The sensor model is a coaxial sector-compound layered cylinder consisting of a central optical fiber with electroluminescent and piezoelectric layers and an external uniform elastic buffer layer. The electroluminescent and piezoelectric layers are separated by radial-longitudinal boundaries, common for both layers, into geometrically equal six "measuring elements" — cylindrical two-layered sectors. The directions of 3D polarization of the piezoelectric phases and the frequencies of luminous efficacy of the electroluminescent phases are different in each sector. In the sensor, a thin translucent "internal" controlling electrode is located between the optical fiber and the electroluminescent layer, and the piezoelectric layer is coated by a thin "external" controlling electrode. The results of numerical modeling of the nonuniform coupled electroelastic fields of the piezoelectroluminescent fiber-optical sensor in the loaded "representative volume" of a composite, taking into account the action of the controlling voltage on the internal and external electrodes, of a numerical calculation of "informative and controlling coefficients" of the sensor, and of testing of an arbitrary 3D stress of state of a unidirectional glass-fiber plastic by the finite-element method are presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohri, Maryam, E-mail: mmohri@ut.ac.ir; Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe; Nili-Ahmadabadi, Mahmoud

The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure ofmore » the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.« less

Effect of composition on SILAR deposited CdxZn1-xS thin films

NASA Astrophysics Data System (ADS)

Ashith V., K.; Gowrish Rao, K.

2018-04-01

In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

NASA Astrophysics Data System (ADS)

Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

2018-06-01

In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography.

PubMed

Chu, Cheng Hung; Shiue, Chiun Da; Cheng, Hsuen Wei; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

2010-08-16

Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a ZnS-SiO(2) dielectric layer, are investigated for the purpose of understanding the structural phase-transitions that occur under the influence of tightly-focused laser beams. Selective chemical etching of recorded marks in conjunction with optical, atomic force, and electron microscopy as well as local electron diffraction analysis are used to discern the complex structural features created under a broad range of laser powers and pulse durations. Clarifying the nature of phase transitions associated with laser-recorded marks in chalcogenide Ge(2)Sb(2)Te(5) thin films provides useful information for reversible optical and electronic data storage, as well as for phase-change (thermal) lithography.

Decorative power generating panels creating angle insensitive transmissive colors

PubMed Central

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-01-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ±70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications. PMID:24577075

Decorative power generating panels creating angle insensitive transmissive colors

NASA Astrophysics Data System (ADS)

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-02-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to +/-70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Decorative power generating panels creating angle insensitive transmissive colors.

PubMed

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L Jay

2014-02-28

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ± 70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Structures and properties of poly(3-alkylthiophene) thin-films fabricated though vapor-phase polymerization.

PubMed

Back, Ji-Woong; Song, Eun-Ah; Lee, Keum-Joo; Lee, Youn-Kyung; Hwang, Chae-Ryong; Jo, Sang-Hyun; Jung, Woo-Gwang; Kim, Jin-Yeol

2012-02-01

Organic semiconducting polymer thin-films of 3-hexylthiophene, 3-octylthiophene, 3-decylthiophene, containing highly oriented crystal were fabricated by gas-phase polymerization using the CVD technique. These poly(3-alkylthiophene) films had a crystallinity up to 80%, and possessed a Hall mobility up to 10 cm2/Vs. The degree of crystalinity and the mobility values increased as the alkyl chain length increased. The crystal structure of the polymers was composed of stacked layers constructed by a side-by-side arrangement of alkyl chains and in-plane pi-pi stacking. These thin films are capable of being applied to organic electronics as the active materials used in thin-film transistors and organic photovoltaic cells.

Ferroelastic switching in a layered-perovskite thin film

PubMed Central

Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu-Feng; Van Tendeloo, Gustaaf; Chen, Long-Qing; Nan, Ce-Wen; Ramesh, Ramamoorthy; Zhang, Jinxing

2016-01-01

A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications. PMID:26838483

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Ferroelastic switching in a layered-perovskite thin film

DOE PAGES

Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; ...

2016-02-03

Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi 2WO 6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barriermore » of ferroelastic switching in orthorhombic Bi 2WO 6 film is ten times lower than the one in PbTiO 3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

Superconductivity in ion-beam-mixed layered Au-Si thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jisrawi, N.M.; McLean, W.L.; Stoffel, N.G.

The superconducting properties of thin films made by mixing alternating layers of Au and Si using ion-beam bombardment correlate with the formation of metastable metallic phases in what is otherwise a simple eutectic system. Transmission-electron-microscopy measurements reveal the superconducting phases to be amorphous. Compound formation and the nature of Au-Si bonding in these metastable phases are demonstrated from x-ray photoelectron spectroscopy and from a previous study of x-ray-absorption spectroscopy. After mixing with a beam of Xe ions, multilayered films with an average nominal composition Au{sub {ital x}}Si{sub 1{minus}{ital x}}, where {ital x}=0.2, 0.4, 0.5, 0.72, and 0.8, exhibited superconducting transitionmore » temperatures in the range 0.2--1.2 K. A double transition feature in the magnetic field dependence of the resistivity is attributed to the formation of more than one metastable metallic phase in the same sample as the ion dose increases.« less

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

NASA Astrophysics Data System (ADS)

Lausund, Kristian Blindheim; Nilsen, Ola

2016-11-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic-inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios.

Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Joshi, U. S.

2018-05-01

In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Methods for forming particles

DOEpatents

Fox, Robert V.; Zhang, Fengyan; Rodriguez, Rene G.; Pak, Joshua J.; Sun, Chivin

2016-06-21

Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI.sub.2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI.sub.2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

The microstructure of the surface layer of magnesium laser alloyed with aluminum and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dziadoń, Andrzej

2016-08-15

The surface layer under analysis was formed as a result of diffusion bonding of a thin AlSi20 plate to a magnesium substrate followed by laser melting. Depending on the process parameters, the laser beam melted the AlSi20 plate only or the AlSi20 plate and a layer of the magnesium surface adjacent to it. Two types of microstructure of the remelted layer were thus analyzed. If the melting zone was limited to the AlSi20 plate, the microstructure of the surface layer was typical of a rapidly solidified hypereutectic Al–Si alloy. Since, however, the liquid AlSi20 reacted with the magnesium substrate, themore » following intermetallic phases formed: Al{sub 3}Mg{sub 2}, Mg{sub 17}Al{sub 12} and Mg{sub 2}Si. The microstructure of the modified surface layer of magnesium was examined using optical, scanning electron and transmission electron microscopy. The analysis of the surface properties of the laser modified magnesium revealed that the thin layer has a microstructure of a rapidly solidified Al–Si alloy offering good protection against corrosion. By contrast, the surface layer containing particles of intermetallic phases was more resistant to abrasion but had lower corrosion resistance than the silumin type layer. - Highlights: •A CO{sub 2} laser was used for surface alloying of Mg with AlSi20. •Before alloying, an AlSi20 plate was diffusion bonded with the Mg substrate. •The process parameters affected the alloyed layer microstructure and properties. •With melting limited to AlSi20, the layer had a structure of rapidly solidified AlSi20. •Mg–Al and Mg–Si phases were present when both the substrate and the plate were melted.« less

Morphology and structure of borides in as-cast titanium and gamma-titanium aluminide-based alloys

NASA Astrophysics Data System (ADS)

Kitkamthorn, Usanee

In this study, the morphology and structure of the borides in boron-modified Ti- and gamma-TiAl-based alloys have been investigated using SEM, TEM, and HRTEM. A variety of different boride morphologies was observed including plates, needles, and ribbons. For the plate and needle borides, the major boride phase is B27 TiB. The needle borides have their major axis parallel to [010], and are bounded by (100) and {101} type-facets. The plate borides develop the same types of facets as the needles and have habit planes parallel to the (100). There are high densities of intrinsic stacking faults on (100) in these borides and these correspond to thin embedded layers of the Bf structure. The plate borides do not exhibit well-defined ORs with respect to the surrounding phases, suggesting that they develop in the liquid melt and were then trapped by the growing solid. Needle borides are observed mostly at boundaries between lamellar colonies: these needles tend to occur in groups lying nearly parallel to one another and, in some cases, to adopt well-defined ORs with respect to the surrounding phases. Cored borides with metallic phases such as beta, alpha, o and alpha 2+gamma in the center are frequently observed, especially in the Ti-based alloy. These core phases usually adopt well-defined ORs with respect to the surrounding boride which enable low-energy coherent interfaces to form between the phases. The ribbon borides are comprised of thin boride flakes interspersed with thin metallic layers. The major boride phase in these flakes is Bf TiB. The habit plane of the flakes is (010) and there are high densities of faults on this plane corresponding to intergrowths of the Ti3B 4 and TiB2 phases, together with thin layers or occluded pockets of metallic B2 phase. Occasional faults are observed on {110} corresponding to embedded slabs of B27 TiB. There is a well-defined OR between the boride flakes and the B2 phase within the ribbons, but not with the surrounding matrix. The characteristics of these various borides are consistent with them forming as eutectic reaction products, with the exception of the finest needles and plates observed in Ti-based alloy.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

Construction of phase diagrams for nanoscaled Ising thin films on the honeycomb lattice using cellular automata simulation approach

NASA Astrophysics Data System (ADS)

Ghaemi, Mehrdad; Javadi, Nabi

2017-11-01

The phase diagrams of the three-layer Ising model on the honeycomb lattice with a diluted surface have been constructed using the probabilistic cellular automata based on Glauber algorithm. The effects of the exchange interactions on the phase diagrams have been investigated. A general mathematical expression for the critical temperature is obtained in terms of relative coupling r = J1/J and Δs = (Js/J) - 1, where J and Js represent the nearest neighbor coupling within inner- and surface-layers, respectively, and each magnetic site in the surface-layer is coupled with the nearest neighbor site in the inner-layer via the exchange coupling J1. In the case of antiferromagnetic coupling between surface-layer and inner-layer, system reveals many interesting phenomena, such as the possibility of existence of compensation line before the critical temperature.

Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

Treesearch

K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

2011-01-01

Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

Sputtered boron indium oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

2017-11-01

Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

Materials and methods for the preparation of nanocomposites

DOEpatents

Nag, Angshuman; Talapin, Dmitri V.

2018-01-30

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

Employment of High-Performance Thin-Layer Chromatography for the Quantification of Oleuropein in Olive Leaves and the Selection of a Suitable Solvent System for Its Isolation with Centrifugal Partition Chromatography.

PubMed

Boka, Vasiliki-Ioanna; Argyropoulou, Aikaterini; Gikas, Evangelos; Angelis, Apostolis; Aligiannis, Nektarios; Skaltsounis, Alexios-Leandros

2015-11-01

A high-performance thin-layer chromatographic methodology was developed and validated for the isolation and quantitative determination of oleuropein in two extracts of Olea europaea leaves. OLE_A was a crude acetone extract, while OLE_AA was its defatted residue. Initially, high-performance thin-layer chromatography was employed for the purification process of oleuropein with fast centrifugal partition chromatography, replacing high-performance liquid-chromatography, in the stage of the determination of the distribution coefficient and the retention volume. A densitometric method was developed for the determination of the distribution coefficients, KC = CS/CM. The total concentrations of the target compound in the stationary phase (CS) and in the mobile phase (CM) were calculated by the area measured in the high-performance thin-layer chromatogram. The estimated Kc was also used for the calculation of the retention volume, VR, with a chromatographic retention equation. The obtained data were successfully applied for the purification of oleuropein and the experimental results confirmed the theoretical predictions, indicating that high-performance thin-layer chromatography could be an important counterpart in the phytochemical study of natural products. The isolated oleuropein (purity > 95%) was subsequently used for the estimation of its content in each extract with a simple, sensitive and accurate high-performance thin-layer chromatography method. The best fit calibration curve from 1.0 µg/track to 6.0 µg/track of oleuropein was polynomial and the quantification was achieved by UV detection at λ 240 nm. The method was validated giving rise to an efficient and high-throughput procedure, with the relative standard deviation % of repeatability and intermediate precision not exceeding 4.9% and accuracy between 92% and 98% (recovery rates). Moreover, the method was validated for robustness, limit of quantitation, and limit of detection. The amount of oleuropein for OLE_A, OLE_AA, and an aqueous extract of olive leaves was estimated to be 35.5% ± 2.7, 51.5% ± 1.4, and 12.5% ± 0.12, respectively. Statistical analysis proved that the method is repeatable and selective, and can be effectively applied for the estimation of oleuropein in olive leaves' extracts, and could potentially replace high-performance liquid chromatography methodologies developed so far. Thus, the phytochemical investigation of oleuropein could be based on high-performance thin-layer chromatography coupled with separation processes, such as fast centrifugal partition chromatography, showing efficacy and credibility. Georg Thieme Verlag KG Stuttgart · New York.

Zeroth order Fabry-Perot resonance enabled ultra-thin perfect light absorber using percolation aluminum and silicon nanofilms

DOE PAGES

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

2016-03-04

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

A validated high performance thin layer chromatography method for determination of yohimbine hydrochloride in pharmaceutical preparations

PubMed Central

Badr, Jihan M.

2013-01-01

Background: Yohimbine is an indole alkaloid used as a promising therapy for erectile dysfunction. A number of methods were reported for the analysis of yohimbine in the bark or in pharmaceutical preparations. Materials and Method: In the present work, a simple and sensitive high performance thin layer chromatographic method is developed for determination of yohimbine (occurring as yohimbine hydrochloride) in pharmaceutical preparations and validated according to International Conference of Harmonization (ICH) guidelines. The method employed thin layer chromatography aluminum sheets precoated with silica gel as the stationary phase and the mobile phase consisted of chloroform:methanol:ammonia (97:3:0.2), which gave compact bands of yohimbine hydrochloride. Results: Linear regression data for the calibration curves of standard yohimbine hydrochloride showed a good linear relationship over a concentration range of 80–1000 ng/spot with respect to the area and correlation coefficient (R2) was 0.9965. The method was evaluated regarding accuracy, precision, selectivity, and robustness. Limits of detection and quantitation were recorded as 5 and 40 ng/spot, respectively. The proposed method efficiently separated yohimbine hydrochloride from other components even in complex mixture containing powdered plants. The amount of yohimbine hydrochloride ranged from 2.3 to 5.2 mg/tablet or capsule in preparations containing the pure alkaloid, while it varied from zero (0) to 1.5–1.8 mg/capsule in dietary supplements containing powdered yohimbe bark. Conclusion: We concluded that this method employing high performance thin layer chromatography (HPTLC) in quantitative determination of yohimbine hydrochloride in pharmaceutical preparations is efficient, simple, accurate, and validated. PMID:23661986

A validated high performance thin layer chromatography method for determination of yohimbine hydrochloride in pharmaceutical preparations.

PubMed

Badr, Jihan M

2013-01-01

Yohimbine is an indole alkaloid used as a promising therapy for erectile dysfunction. A number of methods were reported for the analysis of yohimbine in the bark or in pharmaceutical preparations. In the present work, a simple and sensitive high performance thin layer chromatographic method is developed for determination of yohimbine (occurring as yohimbine hydrochloride) in pharmaceutical preparations and validated according to International Conference of Harmonization (ICH) guidelines. The method employed thin layer chromatography aluminum sheets precoated with silica gel as the stationary phase and the mobile phase consisted of chloroform:methanol:ammonia (97:3:0.2), which gave compact bands of yohimbine hydrochloride. Linear regression data for the calibration curves of standard yohimbine hydrochloride showed a good linear relationship over a concentration range of 80-1000 ng/spot with respect to the area and correlation coefficient (R(2)) was 0.9965. The method was evaluated regarding accuracy, precision, selectivity, and robustness. Limits of detection and quantitation were recorded as 5 and 40 ng/spot, respectively. The proposed method efficiently separated yohimbine hydrochloride from other components even in complex mixture containing powdered plants. The amount of yohimbine hydrochloride ranged from 2.3 to 5.2 mg/tablet or capsule in preparations containing the pure alkaloid, while it varied from zero (0) to 1.5-1.8 mg/capsule in dietary supplements containing powdered yohimbe bark. We concluded that this method employing high performance thin layer chromatography (HPTLC) in quantitative determination of yohimbine hydrochloride in pharmaceutical preparations is efficient, simple, accurate, and validated.

Quantitative Thin-Layer Chromatography/Mass Spectrometry Analysis of Caffeine Using a Surface Sampling Probe Electrospray Ionization Tandem Mass Spectrometry System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ford, Michael J; Deibel, Michael A.; Tomkins, Bruce A

Quantitative determination of caffeine on reversed-phase C8 thin-layer chromatography plates using a surface sampling electrospray ionization system with tandem mass spectrometry detection is reported. The thin-layer chromatography/electrospray tandem mass spectrometry method employed a deuterium-labeled caffeine internal standard and selected reaction monitoring detection. Up to nine parallel caffeine bands on a single plate were sampled in a single surface scanning experiment requiring 35 min at a surface scan rate of 44 {mu}m/s. A reversed-phase HPLC/UV caffeine assay was developed in parallel to assess the mass spectrometry method performance. Limits of detection for the HPLC/UV and thin-layer chromatography/electrospray tandem mass spectrometry methodsmore » determined from the calibration curve statistics were 0.20 ng injected (0.50 {mu}L) and 1.0 ng spotted on the plate, respectively. Spike recoveries with standards and real samples ranged between 97 and 106% for both methods. The caffeine content of three diet soft drinks (Diet Coke, Diet Cherry Coke, Diet Pepsi) and three diet sport drinks (Diet Turbo Tea, Speed Stack Grape, Speed Stack Fruit Punch) was measured. The HPLC/UV and mass spectrometry determinations were in general agreement, and these values were consistent with the quoted values for two of the three diet colas. In the case of Diet Cherry Coke and the diet sports drinks, the determined caffeine amounts using both methods were consistently higher (by 8% or more) than the literature values.« less

Thin-layer chromatography and colorimetric analysis of multi-component explosive mixtures

DOEpatents

Pagoria, Philip F.; Mitchell, Alexander R.; Whipple, Richard E.; Carman, M. Leslie

2014-08-26

A thin-layer chromatography method for detection and identification of common military and peroxide explosives in samples includes the steps of provide a reverse-phase thin-layer chromatography plate; prepare the plate by marking spots on which to deposit the samples by touching the plate with a marker; spot one micro liter of a first standard onto one of the spots, spot one micro liter of a second standard onto another of the spots, and spot samples onto other of spots producing a spotted plate; add eluent to a developing chamber; add the spotted plate to the developing chamber; remove the spotted plate from the developing chamber producing a developed plate; place the developed plate in an ultraviolet light box; add a visualization agent to a dip tank; dip the developed plate in the dip tank and remove the developed plate quickly; and detect explosives by viewing said developed plate.

The influence of anatase-rutile mixed phase and ZnO blocking layer on dye-sensitized solar cells based on TiO2nanofiberphotoanodes

PubMed Central

2013-01-01

High performance is expected in dye-sensitized solar cells (DSSCs) that utilize one-dimensional (1-D) TiO2 nanostructures owing to the effective electron transport. However, due to the low dye adsorption, mainly because of their smooth surfaces, 1-D TiO2 DSSCs show relatively lower efficiencies than nanoparticle-based ones. Herein, we demonstrate a very simple approach using thick TiO2 electrospun nanofiber films as photoanodes to obtain high conversion efficiency. To improve the performance of the DSCCs, anatase-rutile mixed-phase TiO2 nanofibers are achieved by increasing sintering temperature above 500°C, and very thin ZnO films are deposited by atomic layer deposition (ALD) method as blocking layers. With approximately 40-μm-thick mixed-phase (approximately 15.6 wt.% rutile) TiO2 nanofiber as photoanode and 15-nm-thick compact ZnO film as a blocking layer in DSSC, the photoelectric conversion efficiency and short-circuit current are measured as 8.01% and 17.3 mA cm−2, respectively. Intensity-modulated photocurrent spectroscopy and intensity-modulated photovoltage spectroscopy measurements reveal that extremely large electron diffusion length is the key point to support the usage of thick TiO2 nanofibers as photoanodes with very thin ZnO blocking layers to obtain high photocurrents and high conversion efficiencies. PMID:23286741

Formation of an Anti-Core–Shell Structure in Layered Oxide Cathodes for Li-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hanlei; Omenya, Fredrick; Whittingham, M. Stanley

The layered → rock-salt phase transformation in the layered dioxide cathodes for Li-ion batteries is believed to result in a “core-shell” structure of the primary particles, in which the core region maintains as the layered phase while the surface region undergoes the phase transformation to the rock-salt phase. Using transmission electron microscopy, here we demonstrate the formation of an “anti-core-shell” structure in cycled primary particles with a formula of LiNi0.80Co0.15Al0.05O2, in which the surface and subsurface regions remain as the layered structure while the rock-salt phase forms as domains in the bulk with a thin layer of the spinel phasemore » between the rock-salt core and the skin of the layered phase. Formation of this anti-core-shell structure is attributed to the oxygen loss at the surface that drives the migration of oxygen from the bulk to the surface, thereby resulting in localized areas of significantly reduced oxygen levels in the bulk of the particle, which subsequently undergoes the phase transformation to the rock-salt domains. The formation of the anti-core-shell rock-salt domains is responsible for the reduced capacity, discharge voltage and ionic conductivity in cycled cathode.« less

Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

PubMed

Velten, D; Eisenbarth, E; Schanne, N; Breme, J

2004-04-01

Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

Thin transparent conducting films of cadmium stannate

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.

2001-01-01

A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Gang

2017-10-01

Gallium oxide thin films of β and ε phase were grown on c-plane sapphire using metal-organic chemical vapor deposition and the phase compositions were analyzed using X-ray diffraction. The epitaxial phase diagram was constructed as a function of the growth temperature and VI/III ratio. A low growth temperature and low VI/III ratio were beneficial for the formation of hexagonal-type ε-Ga2O3. Further structure analysis revealed that the epitaxial relationship between ε-Ga2O3 and c-plane sapphire is ε-Ga2O3 (0001) || Al2O3 (0001) and ε-Ga2O3 || Al2O3 . The structural evolution of the mixed-phase sample during film thickening was investigated. By reducing the growth rate, the film evolved from a mixed phase to the energetically favored ε phase. Based on these results, a Ga2O3 thin film with a phase-pure ε-Ga2O3 upper layer was successfully obtained.

Relationship of Estimated SHIV Acquisition Time Points During the Menstrual Cycle and Thinning of Vaginal Epithelial Layers in Pigtail Macaques.

PubMed

Kersh, Ellen N; Ritter, Jana; Butler, Katherine; Ostergaard, Sharon Dietz; Hanson, Debra; Ellis, Shanon; Zaki, Sherif; McNicholl, Janet M

2015-12-01

HIV acquisition in the female genital tract remains incompletely understood. Quantitative data on biological HIV risk factors, the influence of reproductive hormones, and infection risk are lacking. We evaluated vaginal epithelial thickness during the menstrual cycle in pigtail macaques (Macaca nemestrina). This model previously revealed increased susceptibility to vaginal infection during and after progesterone-dominated periods in the menstrual cycle. Nucleated and nonnucleated (superficial) epithelial layers were quantitated throughout the menstrual cycle of 16 macaques. We examined the relationship with previously estimated vaginal SHIVSF162P3 acquisition time points in the cycle of 43 different animals repeatedly exposed to low virus doses. In the luteal phase (days 17 to cycle end), the mean vaginal epithelium thinned to 66% of mean follicular thickness (days 1-16; P = 0.007, Mann-Whitney test). Analyzing 4-day segments, the epithelium was thickest on days 9 to 12 and thinned to 31% thereof on days 29 to 32, with reductions of nucleated and nonnucleated layers to 36% and 15% of their previous thickness, respectively. The proportion of animals with estimated SHIV acquisition in each cycle segment correlated with nonnucleated layer thinning (Pearson r = 0.7, P < 0.05, linear regression analysis), but not nucleated layer thinning (Pearson r = 0.6, P = 0.15). These data provide a detailed picture of dynamic cycle-related changes in the vaginal epithelium of pigtail macaques. Substantial thinning occurred in the superficial, nonnucleated layer, which maintains the vaginal microbiome. The findings support vaginal tissue architecture as susceptibility factor for infection and contribute to our understanding of innate resistance to SHIV infection.

The formation of α-phase SnS nanostructure from a hybrid, multi-layered S/Sn/S/Sn/S thin films: Phase stability, surface morphology and optical studies

NASA Astrophysics Data System (ADS)

Baby, Benjamin Hudson; Bharathi Mohan, D.

2017-11-01

Single phase of SnS thin film was fabricated from S/Sn/S/Sn/S multilayer prepared by using atmospheric pressure and vacuum thermal evaporation methods Glancing angle high vacuum thermal evaporation technique was employed to grow Sn nanorods which facilitated the sulphur diffusion in a faster manner to prepare SnS nanoparticles. The sulphur deposition temperature, sulphur deposition time and tin deposition time were successfully tailored in the synthesis process and stabilized α-phase SnS by probing through confocal micro-Raman spectrometer. X-ray diffraction confirms the formation of SnS crystal structure at sulphur deposition temperature 200 °C. The mechanism of formation of highly porous SnS phase with flower like morphology is explained from the morphological analysis of post deposition annealed film. The complete absence of any oxidation state as evident from Raman as well as EDAX analysis confirms that the proposed sulphurization method could be a suitable, simple and cheap technique for the successful sulphurization of metal films. Band gap calculation from Tauc plot showed a direct band gap value of 1.5 eV for films with single phase of SnS which can be used as a p-type absorber layer in thin film solar cells. Emission studies showed the energy transitions attributed to band edge transition and due to the presence of intrinsic defects.

Topological transitions induced by antiferromagnetism in a thin-film topological insulator

NASA Astrophysics Data System (ADS)

Yin, Gen; He, Qinglin; Yu, Luyan; Pan, Lei; Wang, Kang

Ferromagnetism introduced in topological insulators (TIs) opens a non-trivial exchange band gap, providing an exciting platform to control the topological order through an external magnetic field. The magnetization induces a topological transition that breaks time-reversal symmetry, resulting in anomalous Hall effects. Recently, it was experimentally shown that the surface of an antiferromagnetic (AFM) thin film can magnetize the surface Dirac fermions in a TI thin film similar to the case induced by ferromagnetism. Here, we show that when a TI thin film is sandwiched between two antiferromagnetic layers, an unsynchronized magnetic reversal introduces two intermediate spin configurations during the scan of the external field, resulting in a new topological phase with second Chern numbers. This topological phase introduces two counter-propagating chiral edge modes inside the exchange gap, changing the total number of transport channels drastically when the fermi level is close to the Dirac point. Induced by this change, the magnetoresistance of the channel presents an antisymmetric feature during the field scan. With the the help of the high ordering temperature of AFM layers, this transport signature of the phase transition persists up to 90K experimentally. This work is supported by (i) SHINES, an EFRC by US-DOE, Office of Science, BES, #SC0012670. (ii) US-NSF (DMR-1411085), (iii) ARO program W911NF-15-1-10561, and (iv) FAME Center in STARnet, an SRC program by MARCO and DARPA.

Carbon contamination in scanning transmission electron microscopy and its impact on phase-plate applications.

PubMed

Hettler, Simon; Dries, Manuel; Hermann, Peter; Obermair, Martin; Gerthsen, Dagmar; Malac, Marek

2017-05-01

We analyze electron-beam induced carbon contamination in a transmission electron microscope. The study is performed on thin films potentially suitable as phase plates for phase-contrast transmission electron microscopy. Electron energy-loss spectroscopy and phase-plate imaging is utilized to analyze the contamination. The deposited contamination layer is identified as a graphitic carbon layer which is not prone to electrostatic charging whereas a non-conductive underlying substrate charges. Several methods that inhibit contamination are evaluated and the impact of carbon contamination on phase-plate imaging is discussed. The findings are in general interesting for scanning transmission electron microscopy applications. Crown Copyright © 2017. Published by Elsevier Ltd. All rights reserved.

Elaboration and Characterization of TiO2 and Study of the Influence of The Number of Thin Films on the Methylene Blue Adsorption Rate

NASA Astrophysics Data System (ADS)

Madoui, Karima; Medjahed, Aicha; Hamici, Melia; Djamila, Abdi; Boudissa, Mokhtar

2018-05-01

Thin films of titanium oxide (TiO2) deposited on glass substrates were fabricated by using the sol-gel route. The realization of these thin layers was made using the dip-coating technique with a solution of titanium isopropoxyde as a precursor. The samples prepared with different numbers of deposited layers were annealed at 400 ° C for 2 hours. The main purposes of this work were investigations of both the effect of the number of thin TiO2 layers on the crystal structure of the anatase form first and, their ability to adsorb the solution of methylene blue in order to make colored filters from a photocatalytic process. The deposited titanium-oxide layers were characterized by using various techniques: namely, X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and UV-Visible spectrometry. The result obtained by using the XRD technique showed the appearance of an anatase phase, as was confirmed by using Raman spectroscopy. The AFM surface analysis allowed the surface topography to be characterized and the surface roughness to be measured, which increased with increasing number of layers. The UV-Visible spectra showed that the TiO2 films had a good transmittance varying from 65% to 95% according to the number of layers. The gap energy varied as a function of the number of deposited layers. The as deposited TiO2 layers were tested as a photocatalyst towards the adsorption of methylene blue dye. The results obtained during this study showed that the adsorption capacity varied according to the number of deposited thin layers and the exposing duration to ultraviolet (UV) light. The maximum absorption rate of the dye was obtained for the two-layer sample. Seventy-two hours of irradiation allowed the adsorption intensity of the dye to be maximized for two-layer films.

Vapour phase techniques for deposition of CZTS thin films: A review

NASA Astrophysics Data System (ADS)

Kaur, Ramanpreet; Kumar, Sandeep; Singh, Sukhpal

2018-05-01

With the surge of thin film photovoltaic technologies in recent years, for cost reduction and increased production there is a need for earth abundant and non-toxic raw materials. Existing thin film solar cells comprising CuInS2 (CIS), CuInGaSe2 (CIGS) and CdTe contain elements that are rare in earth's crust and in case of CdTe toxic. Cu2ZnSnS4 (CZTS), having Kesterite structure, a direct band gap of 1.4 - 1.5 eV and an absorption coefficient of 104 cm-1 makes a promising candidate for absorber layer in thin film solar cells. So far many physical and chemical techniques have been employed for deposition of CZTS thin films. This review focuses on various vapour phase techniques used for fabrication of films, recent advances in these techniques and their future outlook.

ReWritable Data Storage on DVD by Using Phase Change Technology

NASA Astrophysics Data System (ADS)

Kleine, H.; Martin, F.; Kapeller, M.; Cord, B.; Ebinger, H.

It is expected that the next few years the VHS casette will be replaced by rewritable Digital Versatile Discs (DVD) for home video recording. At this moment three different standards DVD+RW, DVD-RW and DVD-RAM exist, out of which the DVD+RW is expected to dominate the market in Europe and the United States. The disc holds 4.7 GB of computer data, which is equivalent to several hours of high quality video content. At the heart of the disc is a thin film layer stack with a special phase change recording layer. By proper laser irradiation the disc can be overwritten up to 1000 times without noticeable quality loss. A shelf lifetime of 20-50 years is anticipated. With these characteristics the disc is well suited for consumer applications. The present article illuminates how a process engineer can control the disc recording sensitivity, the recording speed and the number of overwriting cycles by the design of the thin film layer stack.

Tricriticality of the Blume-Emery-Griffiths model in thin films of stacked triangular lattices

NASA Astrophysics Data System (ADS)

El Hog, Sahbi; Diep, H. T.

2016-03-01

We study in this paper the Blume-Emery-Griffiths model in a thin film of stacked triangular lattices. The model is described by three parameters: bilinear exchange interaction between spins J, quadratic exchange interaction K and single-ion anisotropy D. The spin Si at the lattice site i takes three values (-1, 0, +1). This model can describe the mixing phase of He-4 (Si = +1,-1) and He-3 (Si = 0) at low temperatures. Using Monte Carlo simulations, we show that there exists a critical value of D below (above) which the transition is of second-(first-)order. In general, the temperature dependence of the concentrations of He-3 is different from layer by layer. At a finite temperature in the superfluid phase, the film surface shows a deficit of He-4 with respect to interior layers. However, effects of surface interaction parameters can reverse this situation. Effects of the film thickness on physical properties will be also shown as functions of temperature.

Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide

PubMed Central

Biscaras, Johan; Chen, Zhesheng; Paradisi, Andrea; Shukla, Abhay

2015-01-01

Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping density of 4 × 1014 cm−2 in few-layer MoS2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS2 with critical temperature ≈10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS2 for samples as thin as bilayers indicates the potential of this approach. PMID:26525386

Methods for testing Zernike phase plates and a report on silicon-based phase plates with reduced charging and improved ageing characteristics

PubMed Central

Marko, Michael; Meng, Xing; Hsieh, Chyongere; Roussie, James; Striemer, Christopher

2013-01-01

Imaging with Zernike phase plates is increasingly being used in cryo-TEM tomography and cryo-EM single-particle applications. However, rapid ageing of the phase plates, together with the cost and effort in producing them, present serious obstacles to widespread adoption. We are experimenting with phase plates based on silicon chips that have thin windows; such phase plates could be mass-produced and made available at moderate cost. The windows are coated with conductive layers to reduce charging, and this considerably extends the useful life of the phase plates compared to traditional pure-carbon phase plates. However, a compromise must be reached between robustness and transmission through the phase-plate film. Details are given on testing phase-plate performance by means of imaging an amorphous thin film and evaluating the power spectra of the images. PMID:23994351

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Origin of thickness dependence of structural phase transition temperatures in BiFeO 3 thin films

DOE PAGES

Yang, Yongsoo; Beekman, Christianne; Siemons, Wolter; ...

2016-03-28

In this study, two structural phase transitions are investigated in highly strained BiFeO 3 thin films grown on LaAlO 3 substrates, as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA, and MA to tetragonal) decrease as the film becomes thinner. The existence of an interface layer at the film-substrate interface, deduced from half-order peak intensities, contributes to this behavior only for the thinnest samples; at larger thicknesses (above a few nanometers) the temperature dependence can be understood in terms of electrostatic considerations akin to size effects inmore » ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase and related to the rearrangement rather than the formation of domains. For ultra-thin films, the tetragonal structure is stable at all investigated temperatures (down to 30 K).« less

Seismic receiver function interpretation: Ps splitting or anisotropic underplating?

NASA Astrophysics Data System (ADS)

Liu, Z.; Park, J. J.

2016-12-01

Crustal anisotropy is crucial to understanding the evolutionary history of Earth's lithosphere. Shear-wave splitting of Moho P-to-s converted phases in receiver functions has often been used to infer crustal anisotropy. In addition to estimating birefringence directly, the harmonic variations of Moho Ps phases in delay times can be used to infer splitting parameters of averaged anisotropy in the crust. However, crustal anisotropy may localize at various levels within the crust due to complex deformational processes. Layered anisotropy requires careful investigation of the distribution of anisotropy before interpreting Moho Ps splitting. In this study, we show results from stations ARU in Russia, KIP in Hawaiian Islands and LSA in Tibetan Plateau, where layered anisotropy is well constrained by intra-crust Ps conversions at high frequencies using harmonic decomposition of multiple-taper correlation receiver functions. Anisotropic velocity models are inferred by forward-modeling decomposed RF waveforms. Our results of ARU and KIP show that the harmonic behavior of Moho Ps phases can be explained by a uniformly anisotropic crust model at lower cut-off frequencies, but higher-resolution RF-signals reveal a thin, highly anisotropic layer at the base of the crust. Station LSA tells a similar story with a twist: a modest Ps birefringence is revealed at high frequencies to stem from multiple thin (5-10-km) layers of localized anisotropy within the middle crust, but no strongly-sheared basal layer is inferred. We suggest that the harmonic variation of Moho Ps phases should always be investigated as a result of anisotropic layering using RFs with frequency content above 1Hz, rather than simply reporting averaged anisotropy of the whole crust.

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

NASA Astrophysics Data System (ADS)

Shen, Huaxiang; Zhu, Guo-Zhen; Botton, Gianluigi A.; Kitai, Adrian

2015-03-01

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality ( 0002 ) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by ( 0002 ) oriented wurtzite GaN and { 111 } oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H2 into Ar and/or N2 during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H2 into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted { 3 3 ¯ 02 } orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H2 into N2 due to the complex reaction between H2 and N2.

Aluminum induced crystallization of amorphous Ge thin films on insulating substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Ch. Kishan, E-mail: kisn@igcar.gov.in; Tah, T.; Sunitha, D. T.

2016-05-23

Aluminium (metal) induced crystallization of amorphous Ge in bilayer and multilayer Ge/Al thin films deposited on quartz substrate at temperature well below the crystallization temperature of bulk Ge is reported. The crystallization of poly-Ge proceeds via formations of dendritic crystalline Ge grains in the Al matrix. The observed phases were characterized by Raman spectroscopy and X-ray diffraction. The microstructure of Al thin film layer was found to have a profound influence on such crystallization process and formation of dendritic grains.

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun

2016-12-01

For epitaxial films, a critical thickness (t c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO 3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO 3/SrRuO 3/SrTiO 3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO 3 film was resolved into a strained layer with an extremely low piezoelectric coefficientmore » of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.« less

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

PubMed Central

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

2016-01-01

For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling. PMID:27929103

Millimeter-wave monolithic diode-grid frequency multiplier

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.

Investigation of AgInS2 thin films grown by coevaporation

NASA Astrophysics Data System (ADS)

Arredondo, C. A.; Clavijo, J.; Gordillo, G.

2009-05-01

AgInS2 thin films were grown on soda-lime glass substrates by co-evaporation of the precursors in a two-step process. X-ray diffraction (XRD) measurements indicated that these compounds grow in different phases and with different crystalline structure depending upon the deposition conditions. However, through a parameter study, conditions were found to grow thin films containing only the AgInS2 phase with chalcopyrite type structure. In samples containing a mixture of several phases, the contribution in percentage terms of each phase to the whole compound was estimated with the help of the PowderCell simulation package. It was also found that the AgInS2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.95 eV, indicating that this compound has good properties to perform as absorbent layer in thin film tandem solar cells. The effect of the deposition conditions on the optical and morphological properties was also investigated through spectral transmitance and atomic force microscopy (AFM) measurements.

Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan

2016-11-10

Growth of unexpected phases from a composite target of BiFeO 3:BiMnO 3 and/or BiFeO 3:BiCrO 3 has been explored using pulsed laser deposition. The Bi 2FeMnO 6 tetragonal phase can be grown directly on SrTiO 3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO 3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO 2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO 3:BiCrO 3 target. Puremore » X2 phase can be obtained on CeO 2-buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO 3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO 2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.« less

SmNiO3/NdNiO3 thin film multilayers

NASA Astrophysics Data System (ADS)

Girardot, C.; Pignard, S.; Weiss, F.; Kreisel, J.

2011-06-01

Rare earth nickelates RENiO3 (RE =rare earth), which attract interest due to their sharp metal-insulator phase transition, are instable in bulk form due to the necessity of an important oxygen pressure to stabilize Ni in its 3+ state of oxidation. Here, we report the stabilization of RE nickelates in [(SmNiO3)t/(NdNiO3)t]n thin film multilayers, t being the thickness of layers alternated n times. Both bilayers and multilayers have been deposited by metal-organic chemical vapor deposition. The multilayer structure and the presence of the metastable phases SmNiO3 and NdNiO3 are evidenced from by x-ray and Raman scattering. Electric measurements of a bilayer structure further support the structural quality of the embedded RE nickelate layers.

Resolution and isolation of enantiomers of (±)-isoxsuprine using thin silica gel layers impregnated with L-glutamic acid, comparison of separation of its diastereomers prepared with chiral derivatizing reagents having L-amino acids as chiral auxiliaries.

PubMed

Bhushan, Ravi; Nagar, Hariom

2015-03-01

Thin silica gel layers impregnated with optically pure l-glutamic acid were used for direct resolution of enantiomers of (±)-isoxsuprine in their native form. Three chiral derivatizing reagents, based on DFDNB moiety, were synthesized having l-alanine, l-valine and S-benzyl-l-cysteine as chiral auxiliaries. These were used to prepare diastereomers under microwave irradiation and conventional heating. The diastereomers were separated by reversed-phase high-performance liquid chromatography on a C18 column with detection at 340 nm using gradient elution with mobile phase containing aqueous trifluoroacetic acid and acetonitrile in different compositions and by thin-layer chromatography (TLC) on reversed phase (RP) C18 plates. Diastereomers prepared with enantiomerically pure (+)-isoxsuprine were used as standards for the determination of the elution order of diastereomers of (±)-isoxsuprine. The elution order in the experimental study of RP-TLC and RP-HPLC supported the developed optimized structures of diastereomers based on density functional theory. The limit of detection was 0.1-0.09 µg/mL in TLC while it was in the range of 22-23 pg/mL in HPLC and 11-13 ng/mL in RP-TLC for each enantiomer. The conditions of derivatization and chromatographic separation were optimized. The method was validated for accuracy, precision, limit of detection and limit of quantification. Copyright © 2014 John Wiley & Sons, Ltd.

"One-sample concept" micro-combinatory for high throughput TEM of binary films.

PubMed

Sáfrán, György

2018-04-01

Phases of thin films may remarkably differ from that of bulk. Unlike to the comprehensive data files of Binary Phase Diagrams [1] available for bulk, complete phase maps for thin binary layers do not exist. This is due to both the diverse metastable, non-equilibrium or instable phases feasible in thin films and the required volume of characterization work with analytical techniques like TEM, SAED and EDS. The aim of the present work was to develop a method that remarkably facilitates the TEM study of the diverse binary phases of thin films, or the creation of phase maps. A micro-combinatorial method was worked out that enables both preparation and study of a gradient two-component film within a single TEM specimen. For a demonstration of the technique thin Mn x Al 1- x binary samples with evolving concentration from x = 0 to x = 1 have been prepared so that the transition from pure Mn to pure Al covers a 1.5 mm long track within the 3 mm diameter TEM grid. The proposed method enables the preparation and study of thin combinatorial samples including all feasible phases as a function of composition or other deposition parameters. Contrary to known "combinatorial chemistry", in which a series of different samples are deposited in one run, and investigated, one at a time, the present micro-combinatorial method produces a single specimen condensing a complete library of a binary system that can be studied, efficiently, within a single TEM session. That provides extremely high throughput for TEM characterization of composition-dependent phases, exploration of new materials, or the construction of phase diagrams of binary films. Copyright © 2018 Elsevier B.V. All rights reserved.

Enhanced Visible Transmittance of Thermochromic VO₂ Thin Films by SiO₂ Passivation Layer and Their Optical Characterization.

PubMed

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-07-09

This paper presents the preparation of high-quality vanadium dioxide (VO₂) thermochromic thin films with enhanced visible transmittance (T vis ) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO₂ thin films with high T vis and excellent optical switching efficiency (E os ) were successfully prepared by employing SiO₂ as a passivation layer. After SiO₂ deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO₂ coating, the phase transition temperature (T c ) of the prepared films was not affected. Compared with pristine VO₂, the total layer thickness after SiO₂ coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO₂ thin films showed a higher T vis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of T vis while maintaining high E os is meaningful for VO₂-based smart window applications.

Effect of shrinkage on isothermal drying behavior of 2-phase olive mill waste

USDA-ARS?s Scientific Manuscript database

The objective of this study was to determine the drying behavior of 2-phase olive mill waste (2POMW) under isothermal microwave-convection drying conditions. 2POMW samples were dried in a thin layer in a variable-power pilot microwave oven with impinging air, using a feedback controller to maintain...

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

PubMed Central

Lausund, Kristian Blindheim; Nilsen, Ola

2016-01-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic–inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios. PMID:27876797

Pressurized planar electrochromatography, high-performance thin-layer chromatography and high-performance liquid chromatography--comparison of performance.

PubMed

Płocharz, Paweł; Klimek-Turek, Anna; Dzido, Tadeusz H

2010-07-16

Kinetic performance, measured by plate height, of High-Performance Thin-Layer Chromatography (HPTLC), High-Performance Liquid Chromatography (HPLC) and Pressurized Planar Electrochromatography (PPEC) was compared for the systems with adsorbent of the HPTLC RP18W plate from Merck as the stationary phase and the mobile phase composed of acetonitrile and buffer solution. The HPLC column was packed with the adsorbent, which was scrapped from the chromatographic plate mentioned. An additional HPLC column was also packed with adsorbent of 5 microm particle diameter, C18 type silica based (LiChrosorb RP-18 from Merck). The dependence of plate height of both HPLC and PPEC separating systems on flow velocity of the mobile phase and on migration distance of the mobile phase in TLC system was presented applying test solute (prednisolone succinate). The highest performance, amongst systems investigated, was obtained for the PPEC system. The separation efficiency of the systems investigated in the paper was additionally confirmed by the separation of test component mixture composed of six hormones. 2010 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, Chih-Hao; Yue, Kan; Wang, Jing

Controlling self-assembled nanostructures in thin films allows the bottom-up fabrication of ordered nanoscale patterns. Here we report the unique thickness-dependent phase behavior in thin films of a bolaform-like giant surfactant, which consists of butyl- and hydroxyl-functionalized polyhedral oligomeric silsesquioxane (BPOSS and DPOSS) cages telechelically located at the chain ends of a polystyrene (PS) chain with 28 repeating monomers on average. In the bulk, BPOSS-PS28-DPOSS forms a double gyroid (DG) phase. Both grazing incidence small angle X-ray scattering and transmission electron microscopy techniques are combined to elucidate the thin film structures. Interestingly, films with thicknesses thinner than 200 nm exhibit anmore » irreversible phase transition from hexagonal perforated layer (HPL) to compressed hexagonally packed cylinders (c-HEX) at 130 °C, while films with thickness larger than 200 nm show an irreversible transition from HPL to DG at 200 °C. The thickness-controlled transition pathway suggests possibilities to obtain diverse patterns via thin film self-assembly.« less

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer

PubMed Central

Zhang, Zhaojing; Yao, Liyong; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming‐Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2017-01-01

Abstract Double layer distribution exists in Cu2SnZnSe4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double‐layer distribution of CZTSe film is eliminated entirely and the formation of MoSe2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSex mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu‐Sn‐Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu2Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm2 and a CZTSe solar cell with efficiency of 7.2% is fabricated. PMID:29610727

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.

PubMed

Zhang, Zhaojing; Yao, Liyong; Zhang, Yi; Ao, Jianping; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming-Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2018-02-01

Double layer distribution exists in Cu 2 SnZnSe 4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe 2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe x mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu-Sn-Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu 2 Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe 2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm 2 and a CZTSe solar cell with efficiency of 7.2% is fabricated.

Strain-induced phenomenon in complex oxide thin films

NASA Astrophysics Data System (ADS)

Haislmaier, Ryan

Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of nonstoichiometry on ferroelectric properties are investigated, where enhanced ferroelectric responses are only found for stoichiometric films grown inside of the growth windows, whereas outside of the optimal growth window conditions, ferroelectric properties are greatly deteriorated and eventually disappear for highly nonstoichiometric film compositions. Utilizing these stoichiometric growth windows, high temperature polar phase transitions are discovered for compressively strained CaTiO3 films with transition temperatures in excess of 700 K, rendering this material as a strong candidate for high temperature electronic applications. Beyond the synthesis of single phase materials using hybrid MBE, a methodology is presented for constructing layered (SrTiO3)n/(CaTiO 3)n superlattice structures, where precise control over the unit cell layering thickness (n) is demonstrated using in-situ reflection high energy electron diffraction. The effects of interface roughness and layering periodicity (n) on the strain-induced ferroelectric properties for a series of n=1-10 (SrTiO3)n/(CaTiO3) n superlattice films are investigated. It is found that the stabilization of a ferroelectric phase is independent of n, but is however strongly dominated by the degree of interface roughness which is quantified by measuring the highest nth order X-ray diffraction peak splitting of each superlattice film. A counter-intuitive realization is made whereby a critical amount of interface roughness is required in order to enable the formation of the predicted strain-stabilized ferroelectric phase, whereas sharp interfaces actually suppress this ferroelectric phase from manifesting. It is shown how high-quality complex oxide superlattices can be constructed using hybrid MBE technique, allowing the ability to control layered materials at the atomic scale. Furthermore, a detailed growth methodology is provided for constructing a layered n=4 SrO(SrTiO3)n Ruddlesden-Popper (RP) phase by hybrid MBE, where the ability to deposit single monolayers of SrO and TiO2 is utilized to build the RP film structure over a time period of 5 hours. This is the first time that a thin film RP phase has been grown using hybrid MBE, where an a stable control over the fluxes is demonstrated during relatively long time periods of growth, which advantageously facilitates the synthesis of high-quality RP materials with excellent structural and chemical homogeneity. Additionally, this work demonstrates some major advancements in optical second harmonic generation (SHG) characterization techniques of ferroelectric thin film materials. The SHG characterization techniques developed here proved to be the 'bread-and-butter' for most of the work performed in this thesis, providing a powerful tool for identifying the existence of strain-induced ferroelectric phases, including their temperature dependence and polar symmetry. The work presented in this dissertation will hopefully provide a preliminary road map for future hybrid MBE growers, scientists and researchers, to develop and investigate epitaxial strain and heterostructure layering induced phenomena in other complex oxide systems.

Step-by-step fabrication of a highly oriented crystalline three-dimensional pillared-layer-type metal-organic framework thin film confirmed by synchrotron X-ray diffraction.

PubMed

Otsubo, Kazuya; Haraguchi, Tomoyuki; Sakata, Osami; Fujiwara, Akihiko; Kitagawa, Hiroshi

2012-06-13

Fabrication of a crystalline ordered thin film based on the porous metal-organic frameworks (MOFs) is one of the practical applications of the future functional nanomaterials. Here, we report the creation of a highly oriented three-dimensional (3-D) porous pillared-layer-type MOF thin film on a metal substrate using a step-by-step approach based on liquid-phase epitaxy. Synchrotron X-ray diffraction (XRD) study clearly indicates that the thin film is crystalline and its orientation is highly controlled in both horizontal and vertical directions relative to the substrate. This report provides the first confirmation of details of not only the crystallinity but also the orientation of 3-D MOF thin film using synchrotron XRD. Moreover, we also demonstrate its guest adsorption/desorption behavior by using in situ XRD measurements. The results presented here would promise useful insights for fabrication of MOF-based nanodevices in the future.

Materials and methods for the preparation of nanocomposites

DOEpatents

Talapin, Dmitri V.; Kovalenko, Maksym V.; Lee, Jong-Soo; Jiang, Chengyang

2016-05-24

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

Properties of various silicon oxide phases in thin films

NASA Technical Reports Server (NTRS)

Ritter, E.

1980-01-01

Layers of SiO2 with reproducible properties can be manufactured relatively easily today. In the case of SiO and Si2O3 layers, it is necessary to carefully check all of the manufacturing parameters for producing layers with reproducible properties. The properties of the layers in the case of SiO2 do conform to expectations. In the case of Si2O3 and SiO, they can be understood at least qualitatively. Additional interesting models are available for a quantitative understanding.

Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

NASA Astrophysics Data System (ADS)

Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

2017-11-01

In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

Tuning the Phase and Microstructural Properties of TiO2 Films Through Pulsed Laser Deposition and Exploring Their Role as Buffer Layers for Conductive Films

NASA Astrophysics Data System (ADS)

Agarwal, S.; Haseman, M. S.; Leedy, K. D.; Winarski, D. J.; Saadatkia, P.; Doyle, E.; Zhang, L.; Dang, T.; Vasilyev, V. S.; Selim, F. A.

2018-04-01

Titanium oxide (TiO2) is a semiconducting oxide of increasing interest due to its chemical and thermal stability and broad applicability. In this study, thin films of TiO2 were deposited by pulsed laser deposition on sapphire and silicon substrates under various growth conditions, and characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption spectroscopy and Hall-effect measurements. XRD patterns revealed that a sapphire substrate is more suitable for the formation of the rutile phase in TiO2, while a silicon substrate yields a pure anatase phase, even at high-temperature growth. AFM images showed that the rutile TiO2 films grown at 805°C on a sapphire substrate have a smoother surface than anatase films grown at 620°C. Optical absorption spectra confirmed the band gap energy of 3.08 eV for the rutile phase and 3.29 eV for the anatase phase. All the deposited films exhibited the usual high resistivity of TiO2; however, when employed as a buffer layer, anatase TiO2 deposited on sapphire significantly improves the conductivity of indium gallium zinc oxide thin films. The study illustrates how to control the formation of TiO2 phases and reveals another interesting application for TiO2 as a buffer layer for transparent conducting oxides.

Rapid prototyping of all-solution-processed multi-lengthscale electrodes using polymer-induced thin film wrinkling

PubMed Central

Gabardo, Christine M.; Adams-McGavin, Robert C.; Fung, Barnabas C.; Mahoney, Eric J.; Fang, Qiyin; Soleymani, Leyla

2017-01-01

Three-dimensional electrodes that are controllable over multiple lengthscales are very important for use in bioanalytical systems that integrate solid-phase devices with solution-phase samples. Here we present a fabrication method based on all-solution-processing and thin film wrinkling using smart polymers that is ideal for rapid prototyping of tunable three-dimensional electrodes and is extendable to large volume manufacturing. Although all-solution-processing is an attractive alternative to vapor-based techniques for low-cost manufacturing of electrodes, it often results in films suffering from low conductivity and poor substrate adhesion. These limitations are addressed here by using a smart polymer to create a conformal layer of overlapping wrinkles on the substrate to shorten the current path and embed the conductor onto the polymer layer. The structural evolution of these wrinkled electrodes, deposited by electroless deposition onto a nanoparticle seed layer, is studied at varying deposition times to understand its effects on structural parameters such as porosity, wrinkle wavelength and height. Furthermore, the effect of structural parameters on functional properties such as electro-active surface area and surface-enhanced Raman scattering is investigated. It is found that wrinkling of electroless-deposited thin films can be used to reduce sheet resistance, increase surface area, and enhance the surface-enhanced Raman scattering signal. PMID:28211898

Rapid prototyping of all-solution-processed multi-lengthscale electrodes using polymer-induced thin film wrinkling

NASA Astrophysics Data System (ADS)

Gabardo, Christine M.; Adams-McGavin, Robert C.; Fung, Barnabas C.; Mahoney, Eric J.; Fang, Qiyin; Soleymani, Leyla

2017-02-01

Three-dimensional electrodes that are controllable over multiple lengthscales are very important for use in bioanalytical systems that integrate solid-phase devices with solution-phase samples. Here we present a fabrication method based on all-solution-processing and thin film wrinkling using smart polymers that is ideal for rapid prototyping of tunable three-dimensional electrodes and is extendable to large volume manufacturing. Although all-solution-processing is an attractive alternative to vapor-based techniques for low-cost manufacturing of electrodes, it often results in films suffering from low conductivity and poor substrate adhesion. These limitations are addressed here by using a smart polymer to create a conformal layer of overlapping wrinkles on the substrate to shorten the current path and embed the conductor onto the polymer layer. The structural evolution of these wrinkled electrodes, deposited by electroless deposition onto a nanoparticle seed layer, is studied at varying deposition times to understand its effects on structural parameters such as porosity, wrinkle wavelength and height. Furthermore, the effect of structural parameters on functional properties such as electro-active surface area and surface-enhanced Raman scattering is investigated. It is found that wrinkling of electroless-deposited thin films can be used to reduce sheet resistance, increase surface area, and enhance the surface-enhanced Raman scattering signal.

Microfluidic "thin chips" for chemical separations.

PubMed

Gaspar, Attila; Salgado, Marisol; Stevens, Schetema; Gomez, Frank A

2010-08-01

This paper describes the design, development and application of microfluidic "thin chips" fabricated from PDMS. Thin chips consist of multiple layers of PDMS chemically bonded onto each other. Unlike thicker PDMS chips that suffer from lack of sensitivity due to PDMS absorption in the VIS and UV range, the thinness of these chips allows for the detection of chromophoric species within the microchannel via an external fiber optics detection system. C18-modified reversed-phase silica particles are packed into the microchannel using a temporary taper created by a magnetic valve and separations using both pressure- and electrochromatographic-driven methods are detailed.

Pharmacognostic Screening of Piper trichostachyon Fruits and its Comparative Analysis with Piper nigrum Using Chromatographic Techniques.

PubMed

Upadhya, Vinayak; Pai, Sandeep R; Ankad, Gireesh M; Hegde, Harsha V

2016-05-01

Piper trichostachyon is a wild, endemic Piper species from Western Ghats of India. The folklore healers of Belagavi region use this plant, similar to Piper nigrum. The present study investigates the comparison between P. nigrum and P. trichostachyon using pharmacognostic parameters. Pharmacognostic evaluation was carried out in terms of morphological, microscopic characters, and phytochemical analysis using standard methods. Comparative physicochemical analysis between P. trichostachyon and P. nigrum was also carried out through estimation of micro-macro nutrients, high-performance thin layer chromatography (HPTLC) investigation and using piperine as a marker compound for reversed phase-ultra flow liquid chromatographic (RP-UFLC) technique. P. trichostachyon grows in the forests, and the fruits are morphologically similar to P. nigrum fruits, so the name in Kannada "Kaadu Kalu menasu" (wild/forest black pepper). The microscopy revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells, and yellowish brown pigment layer, parenchymatous cells. The presence of alkaloids, oil, and tannins were observed in P. trichostachyon fruits. The HPTLC studies visibly indicated differences among two species with 12 peaks and varied banding pattern. RP-UFLC results showed less amount of piperine in P. trichostachyon (0.05 ± 0.002 mg/g) than in P. nigrum (16.14 ± 0.807 mg/g). The study reports on pharmacognostic parameters of P. trichostachyon for the 1(st) time and will be useful for the identification and authentication. The comparative HPTLC and RP-UFLC studies resolve the differentiation impasse among two species. However, further biological efficacy studies are required to establish its use in traditional medicine. Piper trichostachyon grows in the forests, and the fruits are morphologically similar to Piper nigrum fruitsThe microscopy of P. trichostachyon revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells and yellowish brown pigment layer, parenchymatous cellsThe high-performance thin layer chromatography studies visibly indicated differences among two species with varied banding patternReversed phase-ultra flow liquid chromatographic results showed less amount of piperine in P. trichostachyon than in P. nigrum. Abbreviation used: HPTLC: High Performance Thin Layer Chromatography, RP-UFLC: Reversed phase-ultra flow liquid chromatographic analysis, DST: Length of line, Maj: Length of large half axis for ellipse RDS - radius for circle, Rf: Retention Factor, TS: Transverse Section, TLC: Thin Layer Chromatography.

A new method for the radiochemical purity measurement of ¹¹¹In-pentetreotide.

PubMed

Salgado-Garcia, Carlos; Montoza-Aguado, Manuel; Luna-Alcaide, Ana B; Segovia-Gonzalez, Maria M; de Mora, Elena Sanchez; Lopez-Martin, Juana; Ramos-Font, Carlos; Jimenez-Heffernan, Amelia

2011-12-01

The recommended method for the measurement of radiochemical purity (RCP) of ¹¹¹In-labelled pentetreotide is thin-layer chromatography with a silica gel as the stationary phase and a 0.1 N sodium citrate solution (pH 5) as the mobile phase. According to the supplier's instructions, the mobile phase must be prepared before the test is carried out, and the recommended stationary phase is off-market. We propose a new method for RCP measurement in which the mobile phase is acid citrate dextrose, solution A, which does not need to be prepared beforehand, and thin-layer chromatography is performed with a silica gel-impregnated glass fibre sheet as the stationary phase. We used both methods to measure the percentages of radiopharmaceutical and impurities. The range of RCP values obtained was 98.0-99.9% (mean=99.3%) by the standard method and 98.1-99.9% (mean=99.2%) by the new method. We observed no differences between the RCP values of both methods (P=0.070). The proposed method is suitable for RCP testing because it yields results that are in good agreement with those of the standard method and because it is easier to perform as the mobile-phase solution need not be prepared in advance.

Phase field modeling of rapid crystallization in the phase-change material AIST

NASA Astrophysics Data System (ADS)

Tabatabaei, Fatemeh; Boussinot, Guillaume; Spatschek, Robert; Brener, Efim A.; Apel, Markus

2017-07-01

We carry out phase field modeling as a continuum simulation technique in order to study rapid crystallization processes in the phase-change material AIST (Ag4In3Sb67Te26). In particular, we simulate the spatio-temporal evolution of the crystallization of a molten area of the phase-change material embedded in a layer stack. The simulation model is adapted to the experimental conditions used for recent measurements of crystallization rates by a laser pulse technique. Simulations are performed for substrate temperatures close to the melting temperature of AIST down to low temperatures when an amorphous state is involved. The design of the phase field model using the thin interface limit allows us to retrieve the two limiting regimes of interface controlled (low temperatures) and thermal transport controlled (high temperatures) dynamics. Our simulations show that, generically, the crystallization velocity presents a maximum in the intermediate regime where both the interface mobility and the thermal transport, through the molten area as well as through the layer stack, are important. Simulations reveal the complex interplay of all different contributions. This suggests that the maximum switching velocity depends not only on material properties but also on the precise design of the thin film structure into which the phase-change material is embedded.

Microscale Synthesis and Analysis of a Dipeptide.

ERIC Educational Resources Information Center

Blatchly, Richard A.; And Others

1989-01-01

Described is a microscale chemistry laboratory in which a dipeptide is synthesized from its component amino acids and analyzed using chiral-phase thin-layer chromatography. Experimental procedures, and materials are discussed. Twelve references are listed. (CW)

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

PubMed Central

Seemen, Helina; Ritslaid, Peeter; Rähn, Mihkel; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Dueñas, Salvador; Castán, Helena; García, Héctor

2018-01-01

Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0. PMID:29441257

Iron-Terephthalate Coordination Network Thin Films Through In-Situ Atomic/Molecular Layer Deposition.

PubMed

Tanskanen, A; Karppinen, M

2018-06-12

Iron terephthalate coordination network thin films can be fabricated using the state-of-the-art gas-phase atomic/molecular layer deposition (ALD/MLD) technique in a highly controlled manner. Iron is an Earth-abundant and nonhazardous transition metal, and with its rich variety of potential applications an interesting metal constituent for the inorganic-organic coordination network films. Our work underlines the role of the metal precursor used when aiming at in-situ ALD/MLD growth of crystalline inorganic-organic thin films. We obtain crystalline iron terephthalate films when FeCl 3 is employed as the iron source whereas depositions based on the bulkier Fe(acac) 3 precursor yield amorphous films. The chemical composition and structure of the films are investigated with GIXRD, XRR, FTIR and XPS.

Specific heat measurement set-up for quench condensed thin superconducting films.

PubMed

Poran, Shachaf; Molina-Ruiz, Manel; Gérardin, Anne; Frydman, Aviad; Bourgeois, Olivier

2014-05-01

We present a set-up designed for the measurement of specific heat of very thin or ultra-thin quench condensed superconducting films. In an ultra-high vacuum chamber, materials of interest can be thermally evaporated directly on a silicon membrane regulated in temperature from 1.4 K to 10 K. On this membrane, a heater and a thermometer are lithographically fabricated, allowing the measurement of heat capacity of the quench condensed layers. This apparatus permits the simultaneous thermal and electrical characterization of successively deposited layers in situ without exposing the deposited materials to room temperature or atmospheric conditions, both being irreversibly harmful to the samples. This system can be used to study specific heat signatures of phase transitions through the superconductor to insulator transition of quench condensed films.

ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

DOEpatents

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20

A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

Optical response of nanostructured metal/dielectric composites and multilayers

NASA Astrophysics Data System (ADS)

Smith, Geoffrey B.; Maaroof, Abbas I.; Allan, Rodney S.; Schelm, Stefan; Anstis, Geoffrey R.; Cortie, Michael B.

2004-08-01

The homogeneous optical response in conducting nanostructured layers, and in insulating layers containing dense arrays of self assembled conducting nanoparticles separated by organic linkers, is examined experimentally through their effective complex indices (n*, k*). Classical effective medium models, modified to account for the 3-phase nanostructure, are shown to explain (n*, k*) in dense particulate systems but not inhomogeneous layers with macroscopic conductance for which a different approach to homogenisation is discussed. (n*, k*) data on thin granular metal films, thin mesoporous gold, and on thin metal layers containing ordered arrays of voids, is linked to properties of the surface plasmon states which span the nanostructured film. Coupling between evanescent waves at either surface counterbalanced by electron scattering losses must be considered. Virtual bound states for resonant photons result, with the associated transit delay leading to a large rise in n* in many nanostructures. Overcoating n-Ag with alumina is shown to alter (n*, k*) through its impact on the SP coupling. In contrast to classical optical homogenisation, effective indices depend on film thickness. Supporting high resolution SEM images are presented.

Interfacially polymerized layers for oxygen enrichment: a method to overcome Robeson's upper-bound limit.

PubMed

Tsai, Ching-Wei; Tsai, Chieh; Ruaan, Ruoh-Chyu; Hu, Chien-Chieh; Lee, Kueir-Rarn

2013-06-26

Interfacial polymerization of four aqueous phase monomers, diethylenetriamine (DETA), m-phenylenediamine (mPD), melamine (Mela), and piperazine (PIP), and two organic phase monomers, trimethyl chloride (TMC) and cyanuric chloride (CC), produce a thin-film composite membrane of polymerized polyamide layer capable of O2/N2 separation. To achieve maximum efficiency in gas permeance and O2/N2 permselectivity, the concentrations of monomers, time of interfacial polymerization, number of reactive groups in monomers, and the structure of monomers need to be optimized. By controlling the aqueous/organic monomer ratio between 1.9 and 2.7, we were able to obtain a uniformly interfacial polymerized layer. To achieve a highly cross-linked layer, three reactive groups in both the aqueous and organic phase monomers are required; however, if the monomers were arranged in a planar structure, the likelihood of structural defects also increased. On the contrary, linear polymers are less likely to result in structural defects, and can also produce polymer layers with moderate O2/N2 selectivity. To minimize structural defects while maximizing O2/N2 selectivity, the planar monomer, TMC, containing 3 reactive groups, was reacted with the semirigid monomer, PIP, containing 2 reactive groups to produce a membrane with an adequate gas permeance of 7.72 × 10(-6) cm(3) (STP) s(-1) cm(-2) cm Hg(-1) and a high O2/N2 selectivity of 10.43, allowing us to exceed the upper-bound limit of conventional thin-film composite membranes.

Carbon tolerance of Ni-Cu and Ni-Cu/YSZ sub-μm sized SOFC thin film model systems

NASA Astrophysics Data System (ADS)

Götsch, Thomas; Schachinger, Thomas; Stöger-Pollach, Michael; Kaindl, Reinhard; Penner, Simon

2017-04-01

Thin films of YSZ, unsupported Ni-Cu 1:1 alloy phases and YSZ-supported Ni-Cu 1:1 alloy solutions have been reproducibly prepared by magnetron sputter deposition on Si wafers and NaCl(001) single crystal facets at two selected substrate temperatures of 298 K and 873 K. Subsequently, the layer properties of the resulting sub-μm thick thin films as well as the tendency towards carbon deposition following treatment in pure methane at 1073 K has been tested comparatively. Well-crystallized structures of cubic YSZ, cubic NiCu and cubic NiCu/YSZ have been obtained following deposition at 873 K on both substrates. Carbon is deposited on all samples following the trend Ni-Cu (1:1) = Ni-Cu (1:1)/YSZ > pure YSZ, indicating that at least the 1:1 composition of layered Ni-Cu alloy phases is not able to suppress the carbon deposition completely, rendering it unfavorable for usage as anode component in sub-μm sized fuel cells. It is shown that surfaces with a high Cu/Ni ratio nevertheless prohibit any carbon deposition.

Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

NASA Astrophysics Data System (ADS)

Hu, Shu; McIntyre, Paul C.

2012-02-01

The kinetics of Al-catalyzed layer exchange crystallization of amorphous germanium (Ge) thin films at low temperatures is reported. Observation of Ge mass transport from an underlying amorphous Ge layer to the Al film surface through an interposed sub-nanometer GeOx interfacial layer allows independent measurement of the areal density and average area of crystalline Ge islands formed on the film surface. We show that bias-voltage stressing of the interfacial layer can be used to control the areal density of nucleated Ge islands. Based on experimental observations, the Johnson-Mehl-Avrami-Kolmogorov phase transformation theory is used to model nanoscale nucleation and growth of Ge islands in two dimensions. Ge island nucleation kinetics follows an exponentially decaying nucleation rate with time. Ge island growth kinetics switches from linear growth at a constant growth velocity to diffusion-limited growth as the growth front advances. The transition point between these two regimes depends on the Ge nucleation site density and the annealing temperature. Knowledge of the kinetics of low-temperature crystallization is important in achieving textured polycrystalline Ge thin films with large grains for applications in large-area electronics and solar energy conversion.

Evidence of extended cation solubility in atomic layer deposited nanocrystalline BaTiO3 thin films and its strong impact on the electrical properties.

PubMed

Falmbigl, Matthias; Karateev, Igor A; Golovina, Iryna S; Plokhikh, Aleksandr V; Parker, Thomas C; Vasiliev, Alexander L; Spanier, Jonathan E

2018-06-22

Thin films of ≈50 nm thickness with Ba/Ti-ratios ranging from 0.8 to 1.06 were prepared by depositing alternating layers of Ba(OH)2 and TiO2. Annealing at 750 °C promoted the solid-solid transformation into polycrystalline BaTiO3 films containing a mixture of the perovskite and the hexagonal polymorphs with average crystallite sizes smaller than 14 nm and without impurity phases. This, together with an increase of the cubic lattice parameters for Ba-rich films, suggests an extended metastable solubility range for the perovskite-phase in these nanocrystalline thin films on both sides of the stoichiometric composition. Mapping of the cation distribution utilizing energy-filtered transmission electron microscopy corroborates defect accommodation within the BaTiO3 grains. While the cation off-stoichiometry in thermodynamic equilibrium is negligible for BaTiO3, the metastable extended solubility range in the thin films can be directly correlated to the low annealing temperature and nanocrystalline nature. The leakage current behavior can be explained by the formation of Schottky defects for nonstoichiometric films, and the cation ratio has a distinct impact on the dielectric properties: while excess-BaO has a marginal detrimental effect on the permittivity, the dielectric constant declines rapidly by more than 50% towards the Ti-rich side. The present findings highlight the importance of compositional control for the synthesis of nanocrystalline BaTiO3 thin films, in particular for low annealing and/or deposition temperatures. Our synthesis approach using alternating layers of Ba(OH)2 and TiO2 provides a route to precisely control the cation stoichiometry.

Depositing High-T(sub c) Superconductors On Normal-Conductor Wires

NASA Technical Reports Server (NTRS)

Kirlin, Peter S.

1994-01-01

Experiments have demonstrated feasibility of depositing thin layers of high-T(sub c) superconductor on normally electrically conductive wires. Superconductivity evident at and below critical temperature (T{sub c}) of 71 K. OMCVD, organometallic vapor deposition, apparatus coats Ag wire with layer high-T(sub c) superconductor. Superconductive phase of this material formed subsequently by annealing under controlled conditions.

Effect of nickel seed layer on growth of α-V2O5 nanostructured thin films

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat; Singh, Megha; Reddy, G. B.

2015-08-01

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V2O5) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ˜ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V2O5 film deposited on both substrates are carried out by SEM, revealed that features of V2O5 NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

Self-assembly Columnar Structure in Active Layer of Bulk Heterojunction Solar Cell

NASA Astrophysics Data System (ADS)

Pan, Cheng; Segui, Jennifer; Yu, Yingjie; Li, Hongfei; Akgun, Bulent; Satijia, Sushil. K.; Gersappe, Dilip; Nam, Chang-Yong; Rafailovich, Miriam

2012-02-01

Bulk Heterojunction (BHJ) polymer solar cells are an area of intense interest due to their flexibility and relatively low cost. However, due to the disordered inner structure in active layer, the power conversion efficiency of BHJ solar cell is relatively low. Our research provides the method to produce ordered self-assembly columnar structure within active layer of bulk heterojunction (BHJ) solar cell by introducing polystyrene (PS) into the active layer. The blend thin film of polystyrene, poly (3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) at different ratio are spin coated on substrate and annealed in vacuum oven for certain time. Atomic force microscopy (AFM) images show uniform phase segregation on the surface of polymer blend thin film and highly ordered columnar structure is then proven by etching the film with ion sputtering. TEM cross-section technology is also used to investigate the column structure. Neutron reflectometry was taken to establish the confinement of PCBM at the interface of PS and P3HT. The different morphological structures formed via phase segregation will be correlated with the performance of the PEV cells to be fabricated at the BNL-CFN.

Nanoscale monoclinic domains in epitaxial SrRuO{sub 3} thin films deposited by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghica, C., E-mail: cghica@infim.ro; Negrea, R. F.; Nistor, L. C.

2014-07-14

In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO{sub 3} layers used as bottom electrodes in multiferroic coatings onto SrTiO{sub 3} substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO{sub 3} thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO{sub 3} orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence ofmore » structurally disordered nanometric domains in the SrRuO{sub 3} bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (−4% ÷ −5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO{sub 6} octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO{sub 3} structure.« less

High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

DOE Office of Scientific and Technical Information (OSTI.GOV)

Compaan, A. D.; Deng, X.; Bohn, R. G.

2003-10-01

This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Simore » materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.« less

Indentation and overall compression behavior of multilayered thin-film composites. Effect of undulating layer geometry

DOE PAGES

Jamison, Ryan D.; Shen, Y. -L.

2015-03-19

Two finite element models are used to investigate the behavior of aluminum/silicon carbide thin-film layered composites with imperfect internal geometry when subjected to various loadings. In both models, undulating layers are represented by regular waveforms with various amplitudes, wavelengths, and phase offsets. First, uniaxial compressive loading of the composite is considered. The modulus and stress/strain response of the composite is sensitive to both loading direction and frequency of the undulation. Second, the nanoindentation response of the composite is investigated. The derived hardness and modulus are shown to be sensitive to the presence of undulating layers and the relative size ofmore » the indenter to the undulation. Undulating layers create bands of tensile and compressive stress in the indentation direction that are significantly different from the flat layers. The amount of equivalent plastic strain in the Al layers is increased by the presence of undulating layers. The correlations between the two forms of loading, and the implications to composite property measurement are carefully examined in this study.« less

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Yu; Meng, Dechao; Wang, Jianlin

2015-07-06

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high qualitymore » Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.« less

Modes of interaction between nanostructured metal and a conducting mirror as a function of separation and incident polarization

NASA Astrophysics Data System (ADS)

Bonnie, F.; Arnold, M. D.; Smith, G. B.; Gentle, A. R.

2013-09-01

The optical resonances that occur in nanostructured metal layers are modulated in thin film stacks if the nanostructured layer is separated from a reflecting conducting layer by various thicknesses of thin dielectric. We have measured and modeled the optical response of interacting silver layers, with alumina spacer thickness ranging from a few nm to 50 nm, for s- and p-polarized incident light, and a range of incident angles. Standard thin film models, including standard effective medium models for the nanostructured layer, will break down for spacer thickness below a critical threshold. For example, with polarisation in the film plane and some nano-islands, it may occur at around 10 nm depending on spacer refractive index. Of particular interest here are novel effects observed with the onset of percolation in the nanolayer. Hot spot effects can be modified by nearby mirrors. Other modes to consider include (a) a two-particle mode involving a particle and its mirror image (b) A Fano resonance from hybridisation of localized and de-localised plasmon modes (c) a Babinet's core-(partial) shell particle with metal core-dielectric shell in metal (d) spacing dependent phase modulation (e) the impact of field gradients induced by the mirror at the nano-layer.

New results of GridPix TPCs

NASA Astrophysics Data System (ADS)

van der Graaf, Harry

2009-07-01

The Gossip detector, being a GridPix TPC equipped with a thin layer of gas, is a promising alternative for Si tracking detectors. In addition, GridPix would be an interesting way to read out the gaseous phase volume of bi-phase Liquid Xe cryostats of v-less double beta decay and rare event (i.e. WIMP) search experiments.

Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

NASA Astrophysics Data System (ADS)

Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

2018-06-01

Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

Characterization of reaction kinetics in a porous electrode

NASA Technical Reports Server (NTRS)

Fedkiw, Peter S.

1990-01-01

A continuum-model approach, analogous to porous electrode theory, was applied to a thin-layer cell of rectangular and cylindrical geometry. A reversible redox couple is assumed, and the local reaction current density is related to the potential through the formula of Hubbard and Anson for a uniformily accessible thin-layer cell. The placement of the reference electrode is also accounted for in the analysis. Primary emphasis is placed on the effect of the solution-phase ohmic potential drop on the voltammogram characteristics. Correlation equations for the peak-potential displacement from E(sup 0 prime) and the peak current are presented in terms of two dimensionless parameters.

Selective reflection by deteriorated phase accumulation in Fabry-Perot cavity with aperiodic metallic nanomesh entry windows

NASA Astrophysics Data System (ADS)

Sun, Tianyi; Guo, Chuanfei; Kempa, Krzysztof; Ren, Zhifeng

2014-03-01

A Fabry-Perot reflection filter, consisting of semi-transparent metal and dielectric layers on opaque metals, is featured by selective absorption determined by the phase difference of waves from the two interfaces. In such systems, semi-transparency is usually realized by layers of reflective metals thinner than the penetration depth of the light. Here we present a filter cavity with entry windows not made of traditional thin layers, but of aperiodic metallic random nanomeshes thicker than the penetration depth, fabricated by grain boundary lithography. It is shown that due to the deteriorated phase caused by the interface between the random nanomesh and the dielectric layer, the width and location of the resonances can be tuned by metallic coverage. Further experiments show that this phenomenon can be used in designing aperiodic plasmonic metamaterial structures for visible and infrared applications.

A rapid reversed-phase thin layer chromatographic protocol for detection of adulteration in ghee (clarified milk fat) with vegetable oils.

PubMed

Rani, Anupama; Sharma, Vivek; Arora, Sumit; Lal, Darshan; Kumar, Anil

2015-04-01

Detection of milk fat adulteration with foreign fats/oils continues to be a challenge for the dairy industry as well as food testing laboratories, especially in the present scenario of rampant adulteration using the scientific knowledge by unscrupulous persons involved in the trade. In the present investigation a rapid reversed-phase thin layer chromatographic (RP-TLC) protocol was standardized to ascertain the purity of milk fat. RP-TLC protocol did not show any false positive results in the genuine ghee (clarified butter fat) samples of known origin. Adulteration of ghee with coconut oil up to 7. 5 %, soybean oil, sunflower oil and groundnut oil up to 1 %, while, designer oil up to 2 % level could be detected using the standardized RP-TLC protocol. The protocol standardized is rapid and convenient to use.

Vibration damping and heat transfer using material phase changes

NASA Technical Reports Server (NTRS)

Kloucek, Petr (Inventor); Reynolds, Daniel R. (Inventor)

2009-01-01

A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

Vibration damping and heat transfer using material phase changes

DOEpatents

Kloucek, Petr [Houston, TX; Reynolds, Daniel R [Oakland, CA

2009-03-24

A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

Preparation and characterization of nanostructured Pt/TiO2 thin films treated using electron beam.

PubMed

Shin, Joong-Hyeok; Woo, Hee-Gweon; Kim, Bo-Hye; Lee, Byung Cheol; Jun, Jin

2010-05-01

Pt nanoparticle-doped titanium dioxide (Pt/TiO2) thin films were prepared on a silicon wafer substrate by sol-gel spin coating process. The prepared thin films were treated with electron beam (EB at 1.1 MeV, 100, 200, 300 kGy) at air atmosphere. The effect of EB-irradiation on the composition of the treated thin films, optical properties and morphology of thin films were investigated by various analytical techniques such as X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The crystal structure of the TiO2 layer was found to be an anatase phase and the size of TiO2 particles was determined to be about 13 nm. Pt nanoparticles with diameter of 5 nm were observed on surface of the films. A new layer (presumed to be Pt-Ti complex and/or PtO2 compound) was created in the Pt/TiO2 thin film treated with EB (300 kGy). The transmittance of thin film decreased with EB treatment whereas the refractive index increased.

Effect of Gallium Substitution on Lithium-Ion Conductivity and Phase Evolution in Sputtered Li7-3 xGa xLa3Zr2O12 Thin Films.

PubMed

Rawlence, M; Filippin, A N; Wäckerlin, A; Lin, T-Y; Cuervo-Reyes, E; Remhof, A; Battaglia, C; Rupp, J L M; Buecheler, S

2018-04-25

Replacing the liquid electrolyte in conventional lithium-ion batteries with thin-film solid-state lithium-ion conductors is a promising approach for increasing energy density, lifetime, and safety. In particular, Li 7 La 3 Zr 2 O 12 is appealing due to its high lithium-ion conductivity and wide electrochemical stability window. Further insights into thin-film processing of this material are required for its successful integration into solid-state batteries. In this work, we investigate the phase evolution of Li 7-3 x Ga x La 3 Zr 2 O 12 in thin films with various amounts of Li and Ga for stabilizing the cubic phase. Through this work, we gain valuable insights into the crystallization processes unique to thin films and are able to form dense Li 7-3 x Ga x La 3 Zr 2 O 12 layers stabilized in the cubic phase with high in-plane lithium-ion conductivities of up to 1.6 × 10 -5 S cm -1 at 30 °C. We also note the formation of cubic Li 7 La 3 Zr 2 O 12 at the relatively low temperature of 500 °C.

Nickel-Aluminum Layered Double Hydroxide Coating on the Surface of Conductive Substrates by Liquid Phase Deposition.

PubMed

Maki, Hideshi; Takigawa, Masashi; Mizuhata, Minoru

2015-08-12

The direct synthesis of the adhered Ni-Al LDH thin film onto the surface of electrically conductive substrates by the liquid phase deposition (LPD) reaction is carried out for the development of the positive electrode. The complexation and solution equilibria of the dissolved species in the LPD reaction have been clarified by a theoretical approach, and the LPD reaction conditions for the Ni-Al LDH depositions are shown to be optimized by controlling the fluoride ion concentration and the pH of the LPD reaction solutions. The yields of metal oxides and hydroxides by the LPD method are very sensitive to the supersaturation state of the hydroxide in the reaction solution. The surfaces of conductive substrates are completely covered by the minute mesh-like Ni-Al LDH thin film; furthermore, there is no gap between the surfaces of conductive substrates and the deposited Ni-Al LDH thin film. The active material layer thickness was able to be controlled within the range from 100 nm to 1 μm by the LPD reaction time. The high-crystallinity and the arbitrary-thickness thin films on the conductive substrate surface will be beneficial for the interface control of charge transfer reaction fields and the internal resistance reduction of various secondary batteries.

Nanophase change for data storage applications.

PubMed

Shi, L P; Chong, T C

2007-01-01

Phase change materials are widely used for date storage. The most widespread and important applications are rewritable optical disc and Phase Change Random Access Memory (PCRAM), which utilizes the light and electric induced phase change respectively. For decades, miniaturization has been the major driving force to increase the density. Now the working unit area of the current data storage media is in the order of nano-scale. On the nano-scale, extreme dimensional and nano-structural constraints and the large proportion of interfaces will cause the deviation of the phase change behavior from that of bulk. Hence an in-depth understanding of nanophase change and the related issues has become more and more important. Nanophase change can be defined as: phase change at the scale within nano range of 100 nm, which is size-dependent, interface-dominated and surrounding materials related. Nanophase change can be classified into two groups, thin film related and structure related. Film thickness and clapping materials are key factors for thin film type, while structure shape, size and surrounding materials are critical parameters for structure type. In this paper, the recent development of nanophase change is reviewed, including crystallization of small element at nano size, thickness dependence of crystallization, effect of clapping layer on the phase change of phase change thin film and so on. The applications of nanophase change technology on data storage is introduced, including optical recording such as super lattice like optical disc, initialization free disc, near field, super-RENS, dual layer, multi level, probe storage, and PCRAM including, superlattice-like structure, side edge structure, and line type structure. Future key research issues of nanophase change are also discussed.

Two-Phase Solid/Fluid Simulation of Dense Granular Flows With Dilatancy Effects

NASA Astrophysics Data System (ADS)

Mangeney, A.; Bouchut, F.; Fernández-Nieto, E. D.; Kone, E. H.; Narbona-Reina, G.

2016-12-01

Describing grain/fluid interaction in debris flows models is still an open and challenging issue with key impact on hazard assessment [1]. We present here a two-phase two-thin-layer model for fluidized debris flows that takes into account dilatancy effects. It describes the velocity of both the solid and the fluid phases, the compression/ dilatation of the granular media and its interaction with the pore fluid pressure [2]. The model is derived from a 3D two-phase model proposed by Jackson [3] and the mixture equations are closed by a weak compressibility relation. This relation implies that the occurrence of dilation or contraction of the granular material in the model depends on whether the solid volume fraction is respectively higher or lower than a critical value. When dilation occurs, the fluid is sucked into the granular material, the pore pressure decreases and the friction force on the granular phase increases. On the contrary, in the case of contraction, the fluid is expelled from the mixture, the pore pressure increases and the friction force diminishes. To account for this transfer of fluid into and out of the mixture, a two-layer model is proposed with a fluid or a solid layer on top of the two-phase mixture layer. Mass and momentum conservation are satisfied for the two phases, and mass and momentum are transferred between the two layers. A thin-layer approximation is used to derive average equations. Special attention is paid to the drag friction terms that are responsible for the transfer of momentum between the two phases and for the appearance of an excess pore pressure with respect to the hydrostatic pressure. By comparing quantitatively the results of simulation and laboratory experiments on submerged granular flows, we show that our model contains the basic ingredients making it possible to reproduce the interaction between the granular and fluid phases through the change in pore fluid pressure. In particular, we analyse the different time scales in the model and their role in granular/fluid flow dynamics. References[1] R. Delannay, A. Valance, A. Mangeney, O. Roche, P. Richard, J. Phys. D: Appl. Phys., in press (2016). [2] F. Bouchut, E. D. Fernández-Nieto, A. Mangeney, G. Narbona-Reina, J. Fluid Mech., 801, 166-221 (2016). [3] R. Jackson, Cambridges Monographs on Mechanics (2000).

Confinement effects on thin polymer films

NASA Astrophysics Data System (ADS)

Dalnoki-Veress, Karoly J. T.

We present the results of four projects investigating the effects of confinement on polymeric systems. The first study dealt with polymer blends that are quenched using a spincoating technique rather than a temperature quench. The mass fraction of two blends was varied to determine the effect of the substrate-blend interface on the thin film phase separation morphology. Quantitative measurements of the morphology on three different substrates revealed significant differences in the phase separation morphology as a result of the different wetting properties of the polymer blend on the substrates. The second project dealt with the effect of mechanical confinement on the phase separation of polymer blend thin films. We measured the phase separation morphology of polystyrene/poly (methyl methacrylate) (PS/PMMA) blend films of thickness h on a silicon oxide (SiOx) substrate with a SiOx capping layer. A novel phase separation morphology was observed for small capping layer thicknesses L as well as a transition from lateral to lamellar morphology as L is increased. A simple model is presented which explains the observed lateral morphology, and the morphology transition, in terms of a balance between the free energy increase associated with forming the interfaces between PS-rich and PMMA-rich domains, and the free energy increase associated with the elastic bending of the SiOx capping layer. Direct control of the amplitude and period of the deformation is achieved by varying h and L. Reasonable agreement is obtained between the predicted amplitude of the rippling of the film surface and that measured directly using atomic force microscopy. For temperatures greater than the glass transition temperature Tg, thin freely-standing polymer films are unstable to the formation of holes. In the third project, we have studied the formation and growth of two types of holes: those which form spontaneously when the films are heated above Tg, and those purposely nucleated using a heated scanning tunneling microscope tip. For both types of holes, we observe exponential growth of the hole radius, corresponding to the viscous regime of hole formation, and a decrease in the film viscosity with decreasing film thickness h for h < 250 nm. In the last project the thermal stability of freely-standing films was enhanced by symmetrically confining the films between thin layers of silicon oxide to form SiOx/PS/SiOx trilayer films. Aggressive annealing of the films produced a novel morphology consisting of long, parallel domains with a well-defined periodicity. A simple model is presented which describes the scaling behavior of the morphology. We discuss the direct control of the morphology through manipulation of the individual film thicknesses and the long-range Van der Waals or dispersion interactions.

How many molecular layers of polar solvent molecules control chemistry? The concept of compensating dipoles.

PubMed

Langhals, Heinz; Braun, Patricia; Dietl, Christian; Mayer, Peter

2013-09-27

The extension of the solvent influence of the shell into the volume of a polar medium was examined by means of anti-collinear dipoles on the basis of the E(T)(30) solvent polarity scale (i.e., the molar energy of excitation of a pyridinium-N-phenolatebetaine dye; generally: E(T) =28,591 nm kcal mol(-1)/λmax) where no compensation effects were found. As a consequence, solvent polarity effects are concentrated to a very thin layer of a few thousand picometres around the solute where extensions into the bulk solvent become unimportant. A parallelism to the thin surface layer of water to the gas phase is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Raman evidence of the formation of LT-LiCoO 2 thin layers on NiO in molten carbonate at 650°C

NASA Astrophysics Data System (ADS)

Mendoza, L.; Baddour-Hadjean, R.; Cassir, M.; Pereira-Ramos, J. P.

2004-03-01

The structural evolution of thin layers of Co 3O 4 elaborated on nickel-based substrates in the Li 2CO 3-Na 2CO 3 carbonate eutectic at 650 °C as a function of time immersion is reported. Raman microspectrometry has been applied in order to provide more information on the nature of the protective cobalt oxide layers. The typical Raman fingerprint of the LT-LiCoO 2 compound has been obtained, with four well defined bands at 449, 484, 590 and 605 cm -1, while XRD data are unable to distinguish the layered phase (HT) from the spinel one (LT). The mechanical stability of such films does not exceed 10 h in direct contact with the molten carbonate bulk at 650 °C; nevertheless, these conditions are much more corrosive than in a molten carbonate fuel cell (MCFC).

Evidence of Formation of Superdense Nonmagnetic Cobalt.

PubMed

Banu, Nasrin; Singh, Surendra; Satpati, B; Roy, A; Basu, S; Chakraborty, P; Movva, Hema C P; Lauter, V; Dev, B N

2017-02-03

Because of the presence of 3d transition metals in the Earth's core, magnetism of these materials in their dense phases has been a topic of great interest. Theory predicts a dense face-centred-cubic phase of cobalt, which would be nonmagnetic. However, this dense nonmagnetic cobalt has not yet been observed. Recent investigations in thin film polycrystalline materials have shown the formation of compressive stress, which can increase the density of materials. We have discovered the existence of ultrathin superdense nonmagnetic cobalt layers in a polycrystalline cobalt thin film. The densities of these layers are about 1.2-1.4 times the normal density of Co. This has been revealed by X-ray reflectometry experiments, and corroborated by polarized neutron reflectometry (PNR) experiments. Transmission electron microscopy provides further evidence. The magnetic depth profile, obtained by PNR, shows that the superdense Co layers near the top of the film and at the film-substrate interface are nonmagnetic. The major part of the Co film has the usual density and magnetic moment. These results indicate the possibility of existence of nonmagnetic Co in the earth's core under high pressure.

Effect of catalyst on deposition of vanadium oxide in plasma ambient

NASA Astrophysics Data System (ADS)

Singh, Megha; Kumar, Prabhat; Saini, Sujit K.; Reddy, G. B.

2018-05-01

In this paper, we have studied effect of catalyst (buffer layer) on structure, morphology, crystallinity, uniformity of nanostructured thin films deposited in nitrogen plasma ambient keeping all other process parameters constant. The process used for deposition is novel known as Plasma Assisted Sublimation Process (PASP). Samples were then studied using SEM, TEM, HRTEM, Raman spectroscopy. By structural analysis it was found out that samples deposited on Ni layer composed chiefly of α-V2O5 but minor amount of other phases were present in the sample. Samples deposited on Al catalyst layer revealed different phase of V2O5, where sample deposited on Ag was composed chiefly of VO2±x phase. Further analysis revealed that morphology of samples is also affected by catalyst. While samples deposited in Al and Ag layer tend to have reasonably defined geometry, sample deposited on Ni layer were irregular in shape and size. All the results well corroborate with each other.

Interfacial layers in high-temperature-oxidized NiCrAl

NASA Technical Reports Server (NTRS)

Larson, L. A.; Browning, R.; Poppa, H.; Smialek, J.

1983-01-01

The utility of Auger electron spectroscopy combined with ball cratering for depth analysis of oxide and diffusion layers produced in a Ni-14Cr-24Al alloy by oxidation in air at 1180 C for 25 hr is demonstrated. During postoxidation cooling, the oxide layers formed by this alloy spalled profusely. The remaining very thin oxide was primarily Cr2O3 with a trace of Ni. The underlying metal substrate exhibited gamma/gamma-prime and beta phases with a metallic interfacial layer which was similar to the bulk gamma/gamma-prime phase but slightly enriched in Cr and Al. These data are compared to electron microprobe results from a nominally identical alloy. The diffusion layer thickness is modelled with a simple mass balance equation and compared to recent results on the diffusion process in NiCrAl alloys.

Solution-processed phase-change VO(2) metamaterials from colloidal vanadium oxide (VO(x)) nanocrystals.

PubMed

Paik, Taejong; Hong, Sung-Hoon; Gaulding, E Ashley; Caglayan, Humeyra; Gordon, Thomas R; Engheta, Nader; Kagan, Cherie R; Murray, Christopher B

2014-01-28

We demonstrate thermally switchable VO2 metamaterials fabricated using solution-processable colloidal nanocrystals (NCs). Vanadium oxide (VOx) NCs are synthesized through a nonhydrolytic reaction and deposited from stable colloidal dispersions to form NC thin films. Rapid thermal annealing transforms the VOx NC thin films into monoclinic, nanocrystalline VO2 thin films that show a sharp, reversible metal-insulator phase transition. Introduction of precise concentrations of tungsten dopings into the colloidal VOx NCs enables the still sharp phase transition of the VO2 thin films to be tuned to lower temperatures as the doping level increases. We fabricate "smart", differentially doped, multilayered VO2 films to program the phase and therefore the metal-insulator behavior of constituent vertically structured layers with temperature. With increasing temperature, we tailored the optical response of multilayered films in the near-IR and IR regions from that of a strong light absorber, in a metal-insulator structure, to that of a Drude-like reflector, characteristic of a pure metallic structure. We demonstrate that nanocrystal-based nanoimprinting can be employed to pattern multilayered subwavelength nanostructures, such as three-dimensional VO2 nanopillar arrays, that exhibit plasmonic dipolar responses tunable with a temperature change.

Nanosized thin SnO₂ layers doped with Te and TeO₂ as room temperature humidity sensors.

PubMed

Georgieva, Biliana; Podolesheva, Irena; Spasov, Georgy; Pirov, Jordan

2014-05-21

In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques-SEM, EDS in SEM, TEM, SAED, AES and electrical measurements-are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio R(Sn/Te) and the evaporation conditions. It is shown that as-deposited layers with R(Sn/Te) ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature-very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers' surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties.

Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

PubMed

Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

2016-07-06

Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise.

Surface characterizations of oxides synthesized by successive ionic layer deposition

NASA Astrophysics Data System (ADS)

Gilbert, Thomas I.

Successive ionic layer deposition (SILD) is an aqueous technique for depositing thin oxide films on a surface in a layer-by-layer fashion through a series of chemical reactions. This dissertation examines empirical aspects of the SILD technique by characterizing thin oxide films synthesized on model planar supports and then extends the SILD technique to synthesize supported oxide nanostructures on three dimensional supports of interest to catalysis. Atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy provided insight into the SILD of zirconia, alumina, and barium oxide thin films on silicon wafers. The SILD conditions that most affected the surface morphology of the thin oxide films were the selection of aqueous metal salt precursors comprising the SILD solutions and the total number of SILD cycles. Recent studies suggest that a highly dispersed phase of barium oxide supported on alumina interacts differently with NO2 than a bulk-like phase of barium oxide SILD was used to synthesize disperse nanoislands or rafts of barium oxide on larger rafts of alumina supported on a silicon wafer. The SILD method was then extended to deposit barium oxide on an alumina powder support comprised of dense 150 nm spherical crystallites fused together into 1-2 pm particles. Equally weight loaded samples of barium oxide on the fused alumina powder were prepared by SILD and wet impregnation. The NO2 storage behavior of the barium oxide, evaluated by thermogravimetric analysis during NO2 temperature programmed desorption (TPD) experiments, provided insight into the dispersion of barium oxide that resulted from each of the loading techniques. The highly dispersed barium oxide rafts synthesized by SILD on fused alumina released NO2 at temperatures below 500°C during TPD. By comparison, the barium oxide loaded by wet impregnation showed a higher temperature desorption feature above 500°C indicative of bulk-like barium oxide nanoparticles. The NO2 weight loss curves were also used to calculate the relative percentages of BaO in the dispersed phase and bulk-like phase for each loading technique. The ability of SILD to synthesize highly disperse and uniform, conformal oxide coatings on three dimensional supports provides fundamental insight into the interactions between catalysts and supports.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hannachi, Amira, E-mail: amira.hannachi88@gmail.com; Maghraoui-Meherzi, Hager

Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferentialmore » orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like. - Graphical Abstract: We report the preparation of different phases of manganese sulfide thin films (γ, β and α-MnS) by chemical bath deposition method. The effects of deposition parameters such as deposition time and temperature, concentrations of precursors and multi-layer deposition on MnS thin films structure and morphology were investigated. The influence of thermal annealing under nitrogen atmosphere at different temperature on MnS properties was also studied. Different manganese precursors as well as different complexing agent were also used. - Highlights: • γ and β-MnS films were deposited on substrate using the chemical bath deposition. • The effect of deposition parameters on MnS film properties has been investigated. • Multi-layer deposition was also studied to increase film thickness. • The effect of annealing under N{sub 2} at different temperature was investigated.« less

Monitoring the thinning dynamics of soap films by phase shift interferometry. The case of perfluoropolyether surfactants.

PubMed

Gambi, Cecilia M C; Vannoni, Maurizio; Sordini, Andrea; Molesini, Giuseppe

2014-02-01

An interferometric method to monitor the thinning process of vertical soap films from a water solution of surfactant materials is reported. Raw data maps of optical path difference introduced by the film are obtained by conventional phase shift interferometry. Off-line re-processing of such raw data taking into account the layered structure of soap films leads to an accurate measurement of the geometrical thickness. As an example of data acquisition and processing, the measuring chain is demonstrated on perfluoropolyether surfactants; the section profile of vertical films is monitored from drawing to black film state, and quantitative data on the dynamics of the thinning process are presented. The interferometric method proves effective to the task, and lends itself to further investigate the physical properties of soap films.

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switchingmore » using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.« less

Switchable vanadium dioxide (VO2) metamaterials fabricated from tungsten doped vanadia-based colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Paik, Taejong; Hong, Sung-Hoon; Gordon, Thomas; Gaulding, Ashley; Kagan, Cherie; Murray, Christopher

2013-03-01

We report the fabrication of thermochromic VO2-based metamaterials using solution-processable colloidal nanocrystals. Vanadium-based nanoparticles are prepared through a non-hydrolytic reaction, resulting in stable colloidal dispersions in solution. Thermochromic nanocrystalline VO2 thin-films are prepared via rapid thermal annealing of colloidal nanoparticles coated on a variety of substrates. Nanostructured VO2 can be patterned over large areas by nanoimprint lithography. Precise control of tungsten (W) doping concentration in colloidal nanoparticles enables tuning of the phase transition temperature of the nanocrystalline VO2 thin-films. W-doped VO2 films display a sharp temperature dependent phase transition, similar to the undoped VO2 film, but at lower temperatures tunable with the doping level. By sequential coating of doped VO2 with different doping concentrations, we fabricate ?smart? multi-layered VO2 films displaying multiple phase transition temperatures within a single structure, allowing for dynamic modulation of the metal-dielectric layered structure. The optical properties programmed into the layered structure are switchable with temperature, which provides additional degrees of freedom to design tunable optical metamaterials. This work is supported by the US Office of Naval Research Multidisciplinary University Research Initiative (MURI) program grant number ONR-N00014-10-1-0942.

BiVO4 thin film photoanodes grown by chemical vapor deposition.

PubMed

Alarcón-Lladó, Esther; Chen, Le; Hettick, Mark; Mashouf, Neeka; Lin, Yongjing; Javey, Ali; Ager, Joel W

2014-01-28

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm(-2) in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

PubMed Central

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-01-01

This paper presents the preparation of high-quality vanadium dioxide (VO2) thermochromic thin films with enhanced visible transmittance (Tvis) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO2 thin films with high Tvis and excellent optical switching efficiency (Eos) were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc) of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications. PMID:28773679

Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

NASA Astrophysics Data System (ADS)

Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

2016-11-01

A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

CURRENT SHEET THINNING AND ENTROPY CONSTRAINTS DURING THE SUBSTORM GROWTH PHASE

NASA Astrophysics Data System (ADS)

Otto, A.; Hall, F., IV

2009-12-01

A typical property during the growth phase of geomagnetic substorms is the thinning of the near-Earth current sheet, most pronounced in the region between 6 and 15 R_E. We propose that the cause for the current sheet thinning is convection from the midnight tail region to the dayside to replenish magnetospheric magnetic flux which is eroded at the dayside as a result of dayside reconnection. Adiabatic convection from the near-Earth tail region toward the dayside must conserve the entropy on magnetic field lines. This constraint prohibits a source of the magnetic flux from a region further out in the magnetotail. Thus the near-Earth tail region is increasingly depleted of magnetic flux (the Erickson and Wolf [1980] problem) with entropy matching that of flux tubes that are eroded on the dayside. It is proposed that the magnetic flux depletion in the near-Earth tail forces the formation of thin current layers. The process is documented by three-dimensional MHD simulations. It is shown that the simulations yield a time scale, location, and other general characteristics of the current sheet evolution during the substorm growth phase.

Control of the Structure of Diffusion Layer in Carbon Steels Under Nitriding with Preliminary Deposition of Copper Oxide Catalytic Films

NASA Astrophysics Data System (ADS)

Petrova, L. G.; Aleksandrov, V. A.; Malakhov, A. Yu.

2017-07-01

The effect of thin films of copper oxide deposited before nitriding on the phase composition and the kinetics of growth of diffusion layers in carbon steels is considered. The process of formation of an oxide film involves chemical reduction of pure copper on the surface of steel specimens from a salt solution and subsequent oxidation under air heating. The oxide film exerts a catalytic action in nitriding of low- and medium-carbon steels, which consists in accelerated growth of the diffusion layer, the nitride zone in the first turn. The kinetics of the nitriding process and the phase composition of the layer are controlled by the thickness of the copper oxide precursor, i.e., the deposited copper film.

Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

DOE PAGES

Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

2016-12-22

Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr 3Al 2O 6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr 3Al 2O 6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO 3 layer can be employed as an effective barrier to preserve Sr 3Al 2O 6 during subsequent growth, thus allowingmore » its integration in a wider range of oxide heterostructures.« less

Experimental formation of a fractional vortex in a superconducting bi-layer

NASA Astrophysics Data System (ADS)

Tanaka, Y.; Yamamori, H.; Yanagisawa, T.; Nishio, T.; Arisawa, S.

2018-05-01

We report the experimental formation of a fractional vortex generated by using a thin superconducting bi-layer in the form of a niobium bi-layer, observed as a magnetic flux distribution image taken by a scanning superconducting quantum interference device (SQUID) microscope. Thus, we demonstrated that multi-component superconductivity can be realized by an s-wave conventional superconductor, because, in these superconductors, the magnetic flux is no longer quantized as it is destroyed by the existence of an inter-component phase soliton (i-soliton).

Phase autowaves in the near-electrode layer in the electrochemical cell with a magnetic fluid

NASA Astrophysics Data System (ADS)

Chekanov, V. V.; Kandaurova, N. V.; Chekanov, V. S.

2017-06-01

A change in color of the thin pellicle when light is reflected from the surface of the magnetic fluid at the interface with the transparent electrode in the electric field was observed. The formation of variable thickness near-electrode layer leads to a change in the spectrum of the reflected light depending on the applied voltage. Autowaves, that were observed in the layer are a unique object for the study of self-organization process.

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

PubMed Central

Lee, Woongkyu; Yoo, Sijung; Yoon, Kyung Jean; Yeu, In Won; Chang, Hye Jung; Choi, Jung-Hae; Hoffmann-Eifert, Susanne; Waser, Rainer; Hwang, Cheol Seong

2016-01-01

Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems, oxide-based redox system comprises the major category of these intriguing electronic devices, where the local, along both lateral and vertical directions of thin films, changes in oxygen chemistry has been suggested to be the main RS mechanism. However, there are systems which involve distinctive crystallographic phases as CF; the Magnéli phase in TiO2 is one of the very well-known examples. The current research reports the possible presence of distinctive local conducting phase in atomic layer deposited SrTiO3 RS thin film. The conducting phase was identified through extensive transmission electron microscopy studies, which indicated that oxygen-deficient Sr2Ti6O13 or Sr1Ti11O20 phase was presumably present mainly along the grain boundaries of SrTiO3 after the unipolar set switching in Pt/TiN/SrTiO3/Pt structure. A detailed electrical characterization revealed that the samples showed typical bipolar and complementary RS after the memory cell was unipolar reset. PMID:26830978

Thin Layer Chromatographic Resolution of Some β-adrenolytics and a β2-Agonist Using Bovine Serum Albumin as Chiral Additive in Stationary Phase.

PubMed

Malik, Poonam; Bhushan, Ravi

2018-01-01

Direct enantiomeric resolution of commonly used five racemic β-adrenolytics, namely, bisoprolol, atenolol, propranolol, salbutamol and carvedilol has been achieved by thin layer chromatography using bovine serum albumin (BSA) as chiral additive in stationary phase. Successful resolution of the enantiomers of all racemic β-adrenolytics was achieved by use of different composition of simple organic solvents having no buffer or inorganic ions. The effect of variation in pH, temperature, amount of BSA as the additive, and composition of mobile phase on resolution was systematically studied. Spots were visualized in iodine vapors. Native enantiomers for each of the five analytes were isolated and identified and their elution order was determined. The limit of detection was found to be 0.7, 1.2, 0.84, 1.6 and 0.9 μg (per spot) for each enantiomer of bisoprolol, atenolol, propranolol, salbutamol and carvedilol, respectively. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Giant enhancement in Goos-Hänchen shift at the singular phase of a nanophotonic cavity

NASA Astrophysics Data System (ADS)

Sreekanth, Kandammathe Valiyaveedu; Ouyang, Qingling; Han, Song; Yong, Ken-Tye; Singh, Ranjan

2018-04-01

In this letter, we experimentally demonstrate thirtyfold enhancement in Goos-Hänchen shift at the Brewster angle of a nanophotonic cavity that operates at the wavelength of 632.8 nm. In particular, the point-of-darkness and the singular phase are achieved using a four-layered metal-dielectric-dielectric-metal asymmetric Fabry-Perot cavity. A highly absorbing ultra-thin layer of germanium in the stack gives rise to the singular phase and the enhanced Goos-Hänchen shift at the point-of-darkness. The obtained giant Goos-Hänchen shift in the lithography-free nanophotonic cavity could enable many intriguing applications including cost-effective label-free biosensors.

Hybrid structure of white layer in high carbon steel - Formation mechanism and its properties.

PubMed

Hossain, Rumana; Pahlevani, Farshid; Witteveen, Evelien; Banerjee, Amborish; Joe, Bill; Prusty, B Gangadhara; Dippenaar, Rian; Sahajwalla, Veena

2017-10-16

This study identifies for the first time, the hybrid structure of the white layer in high carbon steel and describes its formation mechanism and properties. The so-called 'white layer' in steel forms during high strain rate deformation and appears featureless under optical microscopy. While many researchers have investigated the formation of the white layer, there has been no definitive study, nor is there sufficient evidence to fully explain the formation, structure and properties of the layer. In this study, the formation, morphology and mechanical properties of the white layer was determined following impact testing, using a combination of optical and SE- microscopy, HR-EBSD, TKD and TEM as well as nano-indentation hardness measurements and FE modelling. The phase transformation and recrystallization within and near the white layer was also investigated. The microstructure of the steel in the white layer consisted of nano-sized grains of martensite. A very thin layer of austenite with nano sized grains was identified within the white layer by HR-EBSD techniques, the presence of which is attributed to a thermally-induced reverse phase transformation. Overall, the combination of phase transformations, strain hardening and grain refinement led to a hybrid structure and an increase in hardness of the white layer.

EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development.

PubMed

Gaballah, A E H; Nicolosi, P; Ahmed, Nadeem; Jimenez, K; Pettinari, G; Gerardino, A; Zuppella, P

2018-01-01

The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.

Ferroelectricity emerging in strained (111)-textured ZrO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Zhen, E-mail: a0082709@u.nus.edu, E-mail: msecj@nus.edu.sg; Deng, Jinyu; Liu, Ziyan

2016-01-04

(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO{sub 2} thin films. Our theoretical analyses suggest that the strain imposed on the ZrO{sub 2} (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO{sub 2}, and the compressive strain along certain 〈11-2〉 directions may further stabilize the o-phase. Experimentally ZrO{sub 2} thin films are sputtered onto the MgO (001) substrates buffered bymore » epitaxial TiN layers. ZrO{sub 2} thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO{sub 2} films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO{sub 2} films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed.« less

Transient phases during crystallization of solution-processed organic thin films

NASA Astrophysics Data System (ADS)

Wan, Jing; Li, Yang; Ulbrandt, Jeffery; Smilgies, Detlef-M.; Hollin, Jonathan; Whalley, Adam; Headrick, Randall

We report an in-situ study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor thin film deposition from solution via hollow pen writing, which exhibits multiple transient phases during crystallization. Under high writing speed (25 mm/s) the films have an isotropic morphology, although the mobilities range up to 3.0 cm2/V.s. To understand the crystallization in this highly non-equilibrium regime, we employ in-situ microbeam grazing incidence wide-angle X-ray scattering combined with optical video microscopy at different deposition temperatures. A sequence of crystallization was observed in which a layered liquid-crystalline (LC) phase of C8-BTBT precedes inter-layer ordering. For films deposited above 80ºC, a transition from LC phase to a transient crystalline state that we denote as Cr1 occurs after a temperature-dependent incubation time, which is consistent with classical nucleation theory. After an additional ~ 0.5s, Cr1 transforms to the final stable structure Cr2. Based on these results, we demonstrate a method to produce large crystalline grain size and high carrier mobility during high-speed processing by controlling the nucleation rate during the transformation from the LC phase. Nsf DMR-1307017, NSF DMR-1332208.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

PubMed

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

System for analysis of explosives

DOEpatents

Haas, Jeffrey S [San Ramon, CA

2010-06-29

A system for analysis of explosives. Samples are spotted on a thin layer chromatography plate. Multi-component explosives standards are spotted on the thin layer chromatography plate. The thin layer chromatography plate is dipped in a solvent mixture and chromatography is allowed to proceed. The thin layer chromatography plate is dipped in reagent 1. The thin layer chromatography plate is heated. The thin layer chromatography plate is dipped in reagent 2.

Compact seaweed growth of peritectic phase on confined, flat properitectic dendrites

NASA Astrophysics Data System (ADS)

Ludwig, A.; Mogeritsch, J.

2016-12-01

Peritectic alloys form a variety of different solidification morphologies at low growth rates. An alloy with a concentration that corresponds to the hyper-peritectic limit should show a cellular/dendritic solidification of the peritectic phase for growth velocities above the corresponding constitutional undercooling limit. However, due to nucleation retardation of the peritectic phase we observed growth of properitectic dendrites before cellular growth of the peritectic could established. The transition happened via an overgrowth of dendrites with a thin layer of peritectic phase. The observations were made using a transparent, metal-like solidifying peritectic system that was solidified directionally in thin samples. In the gap between the flat dendrites and the tubing walls, the peritectic phase grew with a compact seaweed morphology, whereas in the interdendritic spacing it formed small-curved bumps. At same distance behind the tip region, more and more polycrystalline-like objects appeared at the elongated traces of the compact seaweed morphology.

Layer-by-layer assembled polyaniline nanofiber/multiwall carbon nanotube thin film electrodes for high-power and high-energy storage applications.

PubMed

Hyder, Md Nasim; Lee, Seung Woo; Cebeci, Fevzi Ç; Schmidt, Daniel J; Shao-Horn, Yang; Hammond, Paula T

2011-11-22

Thin film electrodes of polyaniline (PANi) nanofibers and functionalized multiwall carbon nanotubes (MWNTs) are created by layer-by-layer (LbL) assembly for microbatteries or -electrochemical capacitors. Highly stable cationic PANi nanofibers, synthesized from the rapid aqueous phase polymerization of aniline, are assembled with carboxylic acid functionalized MWNT into LbL films. The pH-dependent surface charge of PANi nanofibers and MWNTs allows the system to behave like weak polyelectrolytes with controllable LbL film thickness and morphology by varying the number of bilayers. The LbL-PANi/MWNT films consist of a nanoscale interpenetrating network structure with well developed nanopores that yield excellent electrochemical performance for energy storage applications. These LbL-PANi/MWNT films in lithium cell can store high volumetric capacitance (~238 ± 32 F/cm(3)) and high volumetric capacity (~210 mAh/cm(3)). In addition, rate-dependent galvanostatic tests show LbL-PANi/MWNT films can deliver both high power and high energy density (~220 Wh/L(electrode) at ~100 kW/L(electrode)) and could be promising positive electrode materials for thin film microbatteries or electrochemical capacitors. © 2011 American Chemical Society

Observation of Electron-Beam-Induced Phase Evolution Mimicking the Effect of the Charge–Discharge Cycle in Li-Rich Layered Cathode Materials Used for Li Ion Batteries

DOE PAGES

Lu, Ping; Yan, Pengfei; Romero, Eric; ...

2015-01-27

Capacity loss, and voltage decrease upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[Li xMn yTM 1-x-y]O 2, TM = Ni, Co or Fe) have recently been attributed to the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li 0.2Ni 0.2Mn 0.6]O 2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle butmore » are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by electron dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. The observation through this study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Caractérisations structurale et morphologique des couches minces de CuInS2 et d'In-S "airless spray"

NASA Astrophysics Data System (ADS)

Kamoun, N.; Belgacem, S.; Amlouk, M.; Bennaceur, R.; Abdelmoula, K.; Belhadj Amara, A.

1994-03-01

We have prepared CuInS2 thin layers by airless spray "S.P.A." in order to use them as an absorber in a photovoltaic cell. The X-ray diffraction analysis has showed that these layers are well crystallized with a privileged (112) principal orientation for a ratio of the concentrations in the pulverized solution x=frac[Cu^I][In^{III]}=1.1. After heat treatment under vacuum the crystallization have been clearly improved. The structural analysis of the thin CuInS2 layers have revealed that a secondary phases of In2S3 and In6S7 are present. Thus we have realized by the same technique thin In-S layers whose structural and morphological properties have been studied. This analysis has showed that the In-S layers are well crystallized for a ratio y=frac[In^{3+]}[S^{2-]}=0.6 in the spray solution. The In-S layers are essentially formed by a β-In2S3 material. Although the In6S7 phase appears to the detriment of β-In2S3 phase for y= 0.75. Nous avons préparé des couches minces de CuInS2, par pulvérisation chimique réactive sans air "P.S.A.", en vue de leur utilisation en tant qu'absorbeur dans un dispositif photovoltaïque. L'analyse par diffraction X a montré que ces couches sont bien cristallisées et que l'orientation principale (112) est privilégiée pour un rapport de concentrations x=frac[Cu^I]{[In^{III}]}=1,1 dans la solution à pulvériser. Après le traitement thermique sous vide la cristallisation est nettement améliorée. L'analyse structurale des couches minces de CuInS2 a révélé que ces couches renferment des phases secondaires d'In2S3 et d'In6S7. Ainsi nous avons réalisé par la même technique "P.S.A.", des couches minces d'In-S dont nous avons étudié les propriétés structurales et morphologiques, Cette analyse a montré que les couches d'In-S sont bien cristallisées. Pour un rapport de concentrations en solution de pulvérisation y=frac[In^{3+]}[S^{2-]}=0,6 les couches d'In-S sont surtout formées du matériau β-In2S3. Alors que la phase In6S7 apparaît au détriment de la phase β-In2S3 pour y= 0,75.

Electro-optic polymeric reflection modulator based on plasmonic metamaterial

NASA Astrophysics Data System (ADS)

Abbas, A.; Swillam, M.

2018-02-01

A novel low power design for polymeric Electro-Optic reflection modulator is proposed based on the Extraordinary Reflection of light from multilayer structure consisting of a plasmonic metasurface with a periodic structure of sub wavelength circular apertures in a gold film above a thin layer of EO polymer and above another thin gold layer. The interference of the different reflected beams from different layer construct the modulated beam, The applied input driving voltage change the polymer refractive index which in turn determine whether the interference is constructive or destructive, so both phase and intensity modulation could be achieved. The resonant wavelength is tuned to the standard telecommunication wavelength 1.55μm, at this wavelength the reflection is minimum, while the absorption is maximum due to plasmonic resonance (PR) and the coupling between the incident light and the plasmonic metasurface.

Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

NASA Astrophysics Data System (ADS)

Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

2017-10-01

We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x < 0.6 ) and the D022 phase ( x > 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

Pharmacognostic Screening of Piper trichostachyon Fruits and its Comparative Analysis with Piper nigrum Using Chromatographic Techniques

PubMed Central

Upadhya, Vinayak; Pai, Sandeep R.; Ankad, Gireesh M.; Hegde, Harsha V.

2016-01-01

Background: Piper trichostachyon is a wild, endemic Piper species from Western Ghats of India. The folklore healers of Belagavi region use this plant, similar to Piper nigrum. Aims: The present study investigates the comparison between P. nigrum and P. trichostachyon using pharmacognostic parameters. Materials and Methods: Pharmacognostic evaluation was carried out in terms of morphological, microscopic characters, and phytochemical analysis using standard methods. Comparative physicochemical analysis between P. trichostachyon and P. nigrum was also carried out through estimation of micro-macro nutrients, high-performance thin layer chromatography (HPTLC) investigation and using piperine as a marker compound for reversed phase-ultra flow liquid chromatographic (RP-UFLC) technique. Results: P. trichostachyon grows in the forests, and the fruits are morphologically similar to P. nigrum fruits, so the name in Kannada “Kaadu Kalu menasu” (wild/forest black pepper). The microscopy revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells, and yellowish brown pigment layer, parenchymatous cells. The presence of alkaloids, oil, and tannins were observed in P. trichostachyon fruits. The HPTLC studies visibly indicated differences among two species with 12 peaks and varied banding pattern. RP-UFLC results showed less amount of piperine in P. trichostachyon (0.05 ± 0.002 mg/g) than in P. nigrum (16.14 ± 0.807 mg/g). Conclusion: The study reports on pharmacognostic parameters of P. trichostachyon for the 1st time and will be useful for the identification and authentication. The comparative HPTLC and RP-UFLC studies resolve the differentiation impasse among two species. However, further biological efficacy studies are required to establish its use in traditional medicine. SUMMARY Piper trichostachyon grows in the forests, and the fruits are morphologically similar to Piper nigrum fruitsThe microscopy of P. trichostachyon revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells and yellowish brown pigment layer, parenchymatous cellsThe high-performance thin layer chromatography studies visibly indicated differences among two species with varied banding patternReversed phase-ultra flow liquid chromatographic results showed less amount of piperine in P. trichostachyon than in P. nigrum. Abbreviation used: HPTLC: High Performance Thin Layer Chromatography, RP-UFLC: Reversed phase-ultra flow liquid chromatographic analysis, DST: Length of line, Maj: Length of large half axis for ellipse RDS - radius for circle, Rf: Retention Factor, TS: Transverse Section, TLC: Thin Layer Chromatography. PMID:27279700

Formation of nickel germanides from Ni layers with thickness below 10 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5more » nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness« less

High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allard Jr, Lawrence Frederick

2016-01-01

(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize themore » binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION« less

Instabilities of Shallow Dynamic Thermocapillary Liquid Layers

NASA Technical Reports Server (NTRS)

Schwabe, D.; Moeller, U.; Schneider, J.; Scharmann, A.

1992-01-01

In the experiments reported here, correlation measurements with three fixed thermocouples and direct optical observations of the dynamically deformed liquid-gas interface were used to study the spatiotemporal structure of stable and unstable thermocapillary flows. The frequency, wavelength, phase speed, angle of propagation, and stability limits are reported for two geometrically different configurations of thermocapillary flow in side-heated thin liquid layers. A theoretical interpretation of the results is presented.

Effect of nickel seed layer on growth of α-V{sub 2}O{sub 5} nanostructured thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ∼ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V{sub 2}O{submore » 5} film deposited on both substrates are carried out by SEM, revealed that features of V{sub 2}O{sub 5} NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.« less

Phase inversion and frequency doubling of reflection high-energy electron diffraction intensity oscillations in the layer-by-layer growth of complex oxides

NASA Astrophysics Data System (ADS)

Mao, Zhangwen; Guo, Wei; Ji, Dianxiang; Zhang, Tianwei; Gu, Chenyi; Tang, Chao; Gu, Zhengbin; Nie*, Yuefeng; Pan, Xiaoqing

In situ reflection high-energy electron diffraction (RHEED) and its intensity oscillations are extremely important for the growth of epitaxial thin films with atomic precision. The RHEED intensity oscillations of complex oxides are, however, rather complicated and a general model is still lacking. Here, we report the unusual phase inversion and frequency doubling of RHEED intensity oscillations observed in the layer-by-layer growth of SrTiO3 using oxide molecular beam epitaxy. In contacts to the common understanding that the maximum(minimum) intensity occurs at SrO(TiO2) termination, respectively, we found that both maximum or minimum intensities can occur at SrO, TiO2, or even incomplete terminations depending on the incident angle of the electron beam, which raises a fundamental question if one can rely on the RHEED intensity oscillations to precisely control the growth of thin films. A general model including surface roughness and termination dependent mean inner potential qualitatively explains the observed phenomena, and provides the answer to the question how to prepare atomically and chemically precise surface/interfaces using RHEED oscillations for complex oxides. We thank National Basic Research Program of China (No. 11574135, 2015CB654901) and the National Thousand-Young-Talents Program.

Formation of Multi-Layer Structures in Bi3Pb7 Intermetallic Compounds under an Ultra-High Gravitational Field

NASA Astrophysics Data System (ADS)

Mashimo, T.; Iguchi, Y.; Bagum, R.; Sano, T.; Sakata, O.; Ono, M.; Okayasu, S.

2008-02-01

Ultra-high gravitational field (Mega-gravity field) can promote sedimentation of atoms (diffusion) even in solids, and is expected to form a compositionally-graded structure and/or nonequilibrium phase in multi-component condensed matter. We had achieved sedimentation of substitutional solute atoms in miscible systems (Bi-Sb, In-Pb, etc.). In this study, a mega-gravity experiment at high temperature was performed on a thin-plate sample (0.7 mm in thickness) of the intermetallic compound Bi3Pb7. A visible four-layer structure was produced, which exhibited different microscopic structures. In the lowest-gravity region layer, Bi phase appeared. In the mid layers, a compositionally-graded structure was formed, with differences observed in the powder X-ray diffraction patterns. Such a multi-layer structure is expected to exhibit unique physical properties such as superconductivity.

Ultrahard carbon film from epitaxial two-layer graphene

NASA Astrophysics Data System (ADS)

Gao, Yang; Cao, Tengfei; Cellini, Filippo; Berger, Claire; de Heer, Walter A.; Tosatti, Erio; Riedo, Elisa; Bongiorno, Angelo

2018-02-01

Atomically thin graphene exhibits fascinating mechanical properties, although its hardness and transverse stiffness are inferior to those of diamond. So far, there has been no practical demonstration of the transformation of multilayer graphene into diamond-like ultrahard structures. Here we show that at room temperature and after nano-indentation, two-layer graphene on SiC(0001) exhibits a transverse stiffness and hardness comparable to diamond, is resistant to perforation with a diamond indenter and shows a reversible drop in electrical conductivity upon indentation. Density functional theory calculations suggest that, upon compression, the two-layer graphene film transforms into a diamond-like film, producing both elastic deformations and sp2 to sp3 chemical changes. Experiments and calculations show that this reversible phase change is not observed for a single buffer layer on SiC or graphene films thicker than three to five layers. Indeed, calculations show that whereas in two-layer graphene layer-stacking configuration controls the conformation of the diamond-like film, in a multilayer film it hinders the phase transformation.

Use of Pseudophase TLC in Teaching Laboratories.

ERIC Educational Resources Information Center

Armstrong, Daniel W.; And Others

1984-01-01

Suggests that pseudophase liquid chromatography, which uses aqueous surfactant solutions instead of organic solvents for the mobile phase, can be substituted for thin-layer chromatography in the introductory organic course. Outlines the method as it applies to common separations in the laboratory. (JN)

Three-dimensional thin film for lithium-ion batteries and supercapacitors.

PubMed

Yang, Yang; Peng, Zhiwei; Wang, Gunuk; Ruan, Gedeng; Fan, Xiujun; Li, Lei; Fei, Huilong; Hauge, Robert H; Tour, James M

2014-07-22

Three-dimensional heterogeneously nanostructured thin-film electrodes were fabricated by using Ta2O5 nanotubes as a framework to support carbon-onion-coated Fe2O3 nanoparticles along the surface of the nanotubes. Carbon onion layers function as microelectrodes to separate the two different metal oxides and form a nanoscale 3-D sandwich structure. In this way, space-charge layers were formed at the phase boundaries, and it provides additional energy storage by charge separation. These 3-D nanostructured thin films deliver both excellent Li-ion battery properties (stabilized at 800 mAh cm(–3)) and supercapacitor (up to 18.2 mF cm(–2)) performance owing to the synergistic effects of the heterogeneous structure. Thus, Li-ion batteries and supercapacitors are successfully assembled into the same electrode, which is promising for next generation hybrid energy storage and delivery devices.

Topological characters in Fe (Te1 -xSex ) thin films

NASA Astrophysics Data System (ADS)

Wu, Xianxin; Qin, Shengshan; Liang, Yi; Fan, Heng; Hu, Jiangping

2016-03-01

We investigate topological properties in the Fe(Te,Se) thin films. We find that the single layer FeTe1 -xSex has nontrivial Z2 topological invariance which originates from the parity exchange at the Γ point of the Brillouin zone. The nontrivial topology is mainly controlled by the Te(Se) height. Adjusting the anion height, which can be realized as the function of lattice constants and x in FeTe1 -xSex , can drive a topological phase transition. In a bulk material, the two-dimensional Z2 topology invariance is extended to a strong three-dimensional one. In a thin film, we predict that the topological invariance oscillates with the number of layers. The results can also be applied to iron pnictides. Our research establishes FeTe1 -xSex as a unique system to integrate high-Tc superconductivity and topological properties in a single electronic structure.

Epitaxial growth of lead zirconium titanate thin films on Ag buffered Si substrates using rf sputtering

NASA Astrophysics Data System (ADS)

Wang, Chun; Laughlin, David E.; Kryder, Mark H.

2007-04-01

Epitaxial lead zirconium titanate (PZT) (001) thin films with a Pt bottom electrode were deposited by rf sputtering onto Si(001) single crystal substrates with a Ag buffer layer. Both PZT(20/80) and PZT(53/47) samples were shown to consist of a single perovskite phase and to have the (001) orientation. The orientation relationship was determined to be PZT(001)[110]‖Pt(001)[110]‖Ag(001)[110]‖Si(001)[110]. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer. The measured remanent polarization Pr and coercive field Ec of the PZT(20/80) thin film were 26μC /cm2 and 110kV/cm, respectively. For PZT(53/47), Pr was 10μC /cm2 and Ec was 80kV/cm.

Influence of Ti Content on the Partial Oxidation of TixFeCoNi Thin Films in Vacuum Annealing

PubMed Central

Yang, Ya-Chu; Yeh, Jien-Wei; Tsau, Chun-Huei

2017-01-01

This study investigated the effects of Ti content and vacuum annealing on the microstructure evolution of TixFeCoNi (x = 0, 0.5, and 1) thin films and the underlying mechanisms. The as-deposited thin film transformed from an FCC (face center cubic) structure at x = 0 into an amorphous structure at x = 1, which can be explained by determining topological instability and a hard ball model. After annealing was performed at 1000 °C for 30 min, the films presented a layered structure comprising metal solid solutions and oxygen-deficient oxides, which can be major attributed to oxygen traces in the vacuum furnace. Different Ti contents provided various phase separation and layered structures. The underlying mechanism is mainly related to the competition among possible oxides in terms of free energy production at 1000 °C. PMID:28953244

Dynamic High-Pressure Behavior of Hierarchical Heterogeneous Geological Materials

DTIC Science & Technology

2016-04-01

sandwiched between two 25µm FEP copolymer layers attached to the copper driver plate . The total package thickness with thin-film epoxy on all bonding...public release. 3 OUTLINE Page # ABSTRACT 2 1. BACKGROUND 4 2. CHARACTERISTICS OF SAND INVESTIGATED 8 3. PLATE ...constituents, phases, inter-phase boundaries ; distributions in shock states; as well as the structural evolutions which can result in strain

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation

NASA Astrophysics Data System (ADS)

Lee, Jaeseong; Lee, Daesu; Cho, Sang June; Seo, Jung-Hun; Liu, Dong; Eom, Chang-Beom; Ma, Zhenqiang

2017-09-01

Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13 V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27 GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns.

Volcanic processes recorded by inclusions in sanidine megacrystals ejected from Quaternary Rockeskyll volcano, Eifel, Germany

NASA Astrophysics Data System (ADS)

Eilhard, Nicole; Schreuer, Jürgen; Stöckhert, Bernhard

2016-04-01

Sanidine megacrystals were ejected by a late stage explosive eruption at the Quaternary Rockeskyll volcanic complex, Eifel volcanic field, Germany. The homogeneous distribution of barium (about 1 % wt BaO equivalent to about 2 mole % celsian component) indicates that the nearly perfect single crystals must have crystallized in the Ostwald-Miers range from a huge reservoir, probably in the roof of a magma chamber. Irregularities during crystal growth caused trapping of hydrous melt inclusions, which are the objective of the present study. The inclusions show a characteristic concentric microstructure, in the following described from the sanidine host towards the inclusion center: (1) Ba is enriched by a factor of 2 to 3 in a ca. 0.01 mm wide rim, compared to the otherwise homogeneous sanidine host; (2) inwards, the continuous rim is overgrown by a thin crust of Ba enriched sanidine with irregular surface; (3) a layer of glass with a composition similar to sanidine; (4) a second, thinner layer of glass slightly reduced in Na2O and K2O, separated from the first glass layer by a sharp interface with approximately spherical shape; (5) a bubble containing a fluid phase, composed of H2O and minor CO2. This record is interpreted as follows: After crystallization of the sanidine megacrystals, a rise in temperature within the magmatic system caused some re-melting of the Ba-rich sanidine around the inclusions. Partitioning of Ba between the small included melt reservoir and the host caused formation of the Ba-rich rim (layer 1) by diffusive exchange. The onset of cooling lead to crystallization of the thin sanidine crust (layer 2). Finally, very rapid decompression and cooling during the subsequent explosive eruption caused sequential phase separation (two stages) in the remaining melt, the denser melt phase (layers 3 and 4) quenched to glass, the complementary low-density volatile-rich phase forming the central bubble. In summary, the microstructure and phase composition of the inclusions in the sanidine megacrystals recorded information on the history of the volcanic system prior to and during explosive eruption.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ping; Yan, Pengfei; Romero, Eric

Capacity loss, and voltage fade upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[LixMnyTM1-x-y]O2 , TM = Ni, Co or Fe) have recently been identified to be correlated to the gradual phase transformation, featuring the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5 nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li0.2Ni0.2Mn0.6]O2 (LMR) particles, which are identical to those reported due to the charge-dischargemore » cycle but are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200 kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by energy dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LMR is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. This study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Titanium dioxide thin films by atomic layer deposition: a review

NASA Astrophysics Data System (ADS)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

Multicaloric effect in bi-layer multiferroic composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vopson, M. M., E-mail: melvin.vopson@port.ac.uk; Zhou, D.; Caruntu, G.

2015-11-02

The multicaloric effect was theoretically proposed in 2012 and, despite numerous follow up studies, the effect still awaits experimental confirmation. The main limitation is the fact that the multicaloric effect is only observed at a temperature equal to the transition temperature of the magnetic and electric phases coexisting within a multiferroic (MF) (i.e., T ≈ T{sub c}{sup m} ≈ T{sub c}{sup e}). Such condition is hard to fulfill in single phase MFs and a solution is to develop suitable composite MF materials. Here, we examine the multicaloric effect in a bi-layer laminated composite MF in order to determine the optimal design parameters for bestmore » caloric response. We show that magnetically induced multicaloric effect requires magnetic component of heat capacity smaller than that of the electric phase, while the layer thickness of the magnetic phase must be at least 5 times the thickness of the electric phase. The electrically induced multicaloric effect requires the magnetic layer to be 10% of the electric phase thickness, while its heat capacity must be larger than that of the electric phase. These selection rules are generally applicable to bulk as well as thin film MF composites for optimal multicaloric effect.« less

Fused Silica Surface Coating for a Flexible Silica Mat Insulation System

NASA Technical Reports Server (NTRS)

Rhodes, W. H.

1973-01-01

Fused silica insulation coatings have been developed for application to a flexible mat insulation system. Based on crystalline phase nucleation and growth kinetics, a 99+% SiO2 glass was selected as the base composition. A coating was developed that incorporated the high emissivity phase NiCr2O4 as a two phase coating with goals of high emittance and minimum change in thermal expansion. A second major coating classification has a plasma sprayed emittance coating over a sealed pure amorphous SiO2 layer. A third area of development centered on extremely thin amorphous SiO2 coatings deposited by chemical vapor deposition. The coating characterization studies presented are mechanical testing of thin specimens extracted from the coatings, cyclic arc exposures, and emittance measurements before and after arc exposures.

Triboelectric generator

DOEpatents

Wang, Zhong L; Fan, Fengru; Lin, Long; Zhu, Guang; Pan, Caofeng; Zhou, Yusheng

2015-11-03

A generator includes a thin first contact charging layer and a thin second contact charging layer. The thin first contact charging layer includes a first material that has a first rating on a triboelectric series. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer includes a second material that has a second rating on a triboelectric series that is more negative than the first rating. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer is disposed adjacent to the first contact charging layer so that the second side of the second contact charging layer is in contact with the second side of the first contact charging layer.

Two-Phase Solid/Fluid Simulation of Dense Granular Flows With Dilatancy Effects

NASA Astrophysics Data System (ADS)

Mangeney, Anne; Bouchut, Francois; Fernandez-Nieto, Enrique; Narbona-Reina, Gladys; Kone, El Hadj

2017-04-01

Describing grain/fluid interaction in debris flows models is still an open and challenging issue with key impact on hazard assessment [1]. We present here a two-phase two-thin-layer model for fluidized debris flows that takes into account dilatancy effects. It describes the velocity of both the solid and the fluid phases, the compression/ dilatation of the granular media and its interaction with the pore fluid pressure [2]. The model is derived from a 3D two-phase model proposed by Jackson [3] and the mixture equations are closed by a weak compressibility relation. This relation implies that the occurrence of dilation or contraction of the granular material in the model depends on whether the solid volume fraction is respectively higher or lower than a critical value. When dilation occurs, the fluid is sucked into the granular material, the pore pressure decreases and the friction force on the granular phase increases. On the contrary, in the case of contraction, the fluid is expelled from the mixture, the pore pressure increases and the friction force diminishes. To account for this transfer of fluid into and out of the mixture, a two-layer model is proposed with a fluid or a solid layer on top of the two-phase mixture layer. Mass and momentum conservation are satisfied for the two phases, and mass and momentum are transferred between the two layers. A thin-layer approximation is used to derive average equations. Special attention is paid to the drag friction terms that are responsible for the transfer of momentum between the two phases and for the appearance of an excess pore pressure with respect to the hydrostatic pressure. Interestingly, when removing the role of water, our model reduces to a dry granular flow model including dilatancy. We first compare experimental and numerical results of dilatant dry granular flows. Then, by quantitatively comparing the results of simulation and laboratory experiments on submerged granular flows, we show that our model contains the basic ingredients making it possible to reproduce the interaction between the granular and fluid phases through the change in pore fluid pressure. In particular, we analyse the different time scales in the model and their role in granular/fluid flow dynamics. References [1] R. Delannay, A. Valance, A. Mangeney, O. Roche, P. Richard, J. Phys. D: Appl. Phys., in press (2016). [2] F. Bouchut, E. D. Fernández-Nieto, A. Mangeney, G. Narbona-Reina, J. Fluid Mech., 801, 166-221 (2016). [3] R. Jackson, Cambridges Monographs on Mechanics (2000).

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn; State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000; Zhang, Yanmin

2013-11-14

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructuremore » after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.« less

Thin films as a platform for understanding the conversion mechanism of FeF2 cathodes in lithium-ion microbatteries

NASA Astrophysics Data System (ADS)

Santos-Ortiz, Reinaldo

Conversion material electrodes such as FeF2 possess the potential to deliver transformative improvements in lithium ion battery performance because they permit a reversible change of more than one Li-ion per 3d metal cation. They outperform current state of the art intercalation cathodes such as LiCoO2, which have volumetric and gravimetric energy densities that are intrinsically limited by single electron transfer. Current studies focus on composite electrodes that are formed by mixing with carbon (FeF 2-C), wherein the carbon is expected to act as a binder to support the matrix and facilitate electronic conduction. These binders complicate the understanding of the electrode-electrolyte interface (SEI) passivation layer growth, of Li agglomeration, of ion and electron transport, and of the basic phase transformation processes under electrochemical cycling. This research uses thin-films as a model platform for obtaining basic understanding to the structural and chemical foundations of the phase conversion processes. Thin film cathodes are free of the binders used in nanocomposite structures and may potentially provide direct basic insight to the evolution of the SEI passivation layer, electron and ion transport, and the electrochemical behavior of true complex phases. The present work consisted of three main tasks (1) Development of optimized processes to deposit FeF2 and LiPON thin-films with the required phase purity and microstructure; (2) Understanding their electron and ion transport properties and; (3) Obtaining insight to the correlation between structure and capacity in thin-film microbatteries with FeF2 thin-film cathode and LiPON thin-film solid electrolyte. Optimized pulsed laser deposition (PLD) growth produced polycrystalline FeF2 films with excellent phase purity and P42/mnm crystallographic symmetry. A schematic band diagram was deduced using a combination of UPS, XPS and UV-Vis spectroscopies. Room temperature Hall measurements reveal that as-deposited FeF2 is n-type with an electron mobility of 0.33 cm 2/V.s and a resistivity was 0.255 O.cm. The LiPON films were deposited by reactive sputtering in nitrogen, and the results indicate that the ionic conductivity is dependent on the amount of nitrogen incorporated into the film during processing. The highest ionic conductivity obtained was 1.431.9E-6 Scm-1 and corresponded to a chemical composition of Li1.9PO3.3N.21.

Finite size effects in phase transformation kinetics in thin films and surface layers

NASA Astrophysics Data System (ADS)

Trofimov, Vladimir I.; Trofimov, Ilya V.; Kim, Jong-Il

2004-02-01

In studies of phase transformation kinetics in thin films, e.g. crystallization of amorphous films, until recent time is widely used familiar Kolmogorov-Johnson-Mehl-Avrami (KJMA) statistical model of crystallization despite it is applicable only to an infinite medium. In this paper a model of transformation kinetics in thin films based on a concept of the survival probability for randomly chosen point during transformation process is presented. Two model versions: volume induced transformation (VIT) when the second-phase grains nucleate over a whole film volume and surface induced transformation (SIT) when they form on an interface with two nucleation mode: instantaneous nucleation at transformation onset and continuous one during all the process are studied. At VIT-process due to the finite film thickness effects the transformation profile has a maximum in a film middle, whereas that of the grains population reaches a minimum inhere, the grains density is always higher than in a volume material, and the thinner film the slower it transforms. The transformation kinetics in a thin film obeys a generalized KJMA equation with parameters depending on a film thickness and in limiting cases of extremely thin and thick film it reduces to classical KJMA equation for 2D- and 3D-system, respectively.

The effect of annealing on structural and optical properties of α-Fe2O3/CdS/α-Fe2O3 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Saleem, M.; Durrani, S. M. A.; Saheb, N.; Al-Kuhaili, M. F.; Bakhtiari, I. A.

2014-11-01

Multilayered thin film heterostructures of α-Fe2O3/CdS/α-Fe2O3 were prepared through physical vapor deposition. Each α-Fe2O3 layer was deposited by e-beam evaporation of iron in an oxygen atmosphere. The CdS layer was deposited by thermal evaporation in a vacuum. The effect of post annealing of multilayered thin films in air in the temperature range 250 °C to 450 °C was investigated. Structural characterization indicated the growth of the α-Fe2O3 phase with a polycrystalline structure without any CdS crystalline phase. As-deposited multilayer heterostructures were amorphous and transformed into polycrystalline upon annealing. The surface modification of the films during annealing was revealed by scanning electron microscopy. Spectrophotometric measurements were used to determine the optical properties, including the transmittance, absorbance, and band gap. All the films had both direct as well as indirect band gaps.

Bulk heterojunction thin film formation by single and dual feed ultrasonic spray method for application in organic solar cells

NASA Astrophysics Data System (ADS)

Marathe, D. M.; Tarkas, H. S.; Mahajan, M. S.; Lonkar, G. S.; Tak, S. R.; Sali, J. V.

2016-09-01

We here present a way of preparing the polymer: fullerene BHJ using dual feed method which can lead to formation of pure phases. In this report, we present results of our initial experiments in this direction. The effect of process parameters on the thickness and surface roughness of the active layer has been discussed. The structural and optical properties have been studied using the optical microscope, UV—visible spectroscopy and photoluminescence spectroscopy. Significant PL quenching indicates efficient charge separation in the BHJ formed using this technique. We have also compared the BHJ thin films prepared with this dual feed ultrasonic technique with the single feed spray method. The BHJ formed using this technique has been used as an active layer in OSC. supported by the University Grants Commission, New Delhi, under Faculty Improvement Programme (No. 33-02/12(WRO) Dt.19.03.2013) and the Special Assistance Programme (530/2/DRS/2010(SAP-I)) Phase-II.

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Cr incorporated phase transformation in Y2O3 under ion irradiation

PubMed Central

Li, N.; Yadav, S. K.; Xu, Y.; Aguiar, J. A.; Baldwin, J. K.; Wang, Y. Q.; Luo, H. M.; Misra, A.; Uberuaga, B. P.

2017-01-01

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y2O3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1st layer)/100 nm Y2O3 (2nd layer)/135 nm Fe - 20 at.% Cr (3rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y2O3 interface. Further, correlated with Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y2O3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y2O3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys. PMID:28091522

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE PAGES

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun; ...

2017-01-16

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Engineering Particle Surface Chemistry and Electrochemistry with Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Jackson, David Hyman Kentaro

Atomic layer deposition (ALD) is a vapor phase thin film coating technique that relies on sequential pulsing of precursors that undergo self-limited surface reactions. The self- limiting reactions and gas phase diffusion of the precursors together enable the conformal coating of microstructured particles with a high degree of thickness and compositional control. ALD may be used to deposit thin films that introduce new functionalities to a particle surface. Examples of new functionalities include: chemical reactivity, a mechanically strong protective coating, and an electrically resistive layer. The coatings properties are often dependent on the bulk properties and microstructure of the particle substrate, though they usually do not affect its bulk properties or microstructure. Particle ALD finds utility in the ability to synthesize well controlled, model systems, though it is expensive due to the need for costly metal precursors that are dangerous and require special handling. Enhanced properties due to ALD coating of particles in various applications are frequently described empirically, while the details of their enhancement mechanisms often remain the focus of ongoing research in the field. This study covers the various types of particle ALD and attempts to describe them from the unifying perspective of surface science.

Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

PubMed Central

Georgieva, Biliana; Podolesheva, Irena; Spasov, Georgy; Pirov, Jordan

2014-01-01

In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers' surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties. PMID:24854359

Theory of the spatial resolution of (scanning) transmission electron microscopy in liquid water or ice layers.

PubMed

de Jonge, Niels

2018-04-01

The sample dependent spatial resolution was calculated for transmission electron microscopy (TEM) and scanning TEM (STEM) of objects (e.g., nanoparticles, proteins) embedded in a layer of liquid water or amorphous ice. The theoretical model includes elastic- and inelastic scattering, beam broadening, and chromatic aberration. Different contrast mechanisms were evaluated as function of the electron dose, the detection angle, and the sample configuration. It was found that the spatial resolution scales with the electron dose to the -1/4th power. Gold- and carbon nanoparticles were examined in the middle of water layers ranging from 0.01--10 µm thickness representing relevant classes of experiments in both materials science and biology. The optimal microscope settings differ between experimental configurations. STEM performs the best for gold nanoparticles for all layer thicknesses, while carbon is best imaged with phase-contrast TEM for thin layers but bright field STEM is preferred for thicker layers. The resolution was also calculated for a water layer enclosed between thin membranes. The influence of chromatic aberration correction for TEM was examined as well. The theory is broadly applicable to other types of materials and sample configurations. Copyright © 2018 Elsevier B.V. All rights reserved.

Bulk heterojunction formation between indium tin oxide nanorods and CuInS2 nanoparticles for inorganic thin film solar cell applications.

PubMed

Cho, Jin Woo; Park, Se Jin; Kim, Jaehoon; Kim, Woong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2012-02-01

In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS(2) (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO(2) layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V(oc), J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

Growth and interfacial structure of methylammonium lead iodide thin films on Au(111)

NASA Astrophysics Data System (ADS)

She, Limin; Liu, Meizhuang; Li, Xiaoli; Cai, Zeying; Zhong, Dingyong

2017-02-01

Due to the promising optoelectronic properties, organic-inorganic hybrid perovskites have been intensively studied as the active layers in perovskite solar cells. However, the structural information about their interface, one of the key factors determining device performances, is so far very rare. Herein, we report on the growth of CH3NH3PbI3 (MAPbI3, MA=CH3NH3) thin films by means of vapor deposition under ultrahigh vacuum. The surface morphology and interfacial structure have been investigated by scanning tunneling microscopy. At the initial growth stage, a complicated transient phase consisting of three atomic layers, i.e., iodine, MA-PbI4 and MA-I, was formed on the Au(111) substrate. With the coverage increasing, atomically smooth MAPbI3 films with orthorhombic structure have been obtained after annealing to 373 K. The films followed a self-organized twofold-layer by twofold-layer growth mode with the formation of complete PbI6 octahedrons and the exposure of MA-I terminated (001) surface.

A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer

NASA Astrophysics Data System (ADS)

Zeng, Yong; Ning, Honglong; Zheng, Zeke; Zhang, Hongke; Fang, Zhiqiang; Yao, Rihui; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao; Lu, Xubing

2017-04-01

Thermal annealing is a conventional and effective way to improve the bias stress stability of oxide thin film transistors (TFT) on solid substrates. However, it is still a challenge for enhancing the bias stress stability of oxide TFTs on flexible substrates by high-temperature post-treatment due to the thermal sensitivity of flexible substrates. Here, a room temperature strategy is presented towards enhanced performance and bias stability of oxide TFTs by intentionally engineering a sandwich structure channel layer consisting of a superlattice with aluminum doped zinc oxide (AZO) and Al2O3 thin films. The Al2O3/AZO/Al2O3-TFTs not only exhibit a saturation mobility of 9.27 cm2 V-1 s-1 and a linear mobility of 11.38 cm2 V-1 s-1 but also demonstrate a better bias stress stability than AZO/Al2O3-TFT. Moreover, the underlying mechanism of this enhanced electrical performance of TFTs with a sandwich structure channel layer is that the bottom Al2O3 thin films can obviously improve the crystalline phase of AZO films while decreasing electrical trapping centers and adsorption sites for undesirable molecules such as water and oxygen.

Quantitative Caffeine Analysis Using a Surface Sampling Probe Electrospray Ionization Tandem Mass Spectrometry System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ford, Michael J; Deibel, Michael A.; Tomkins, Bruce A

Quantitative determination of caffeine on reversed-phase C8 thin-layer chromatography plates using a surface sampling electrospray ionization system with tandem mass spectrometry detection is reported. The thin-layer chromatography/electrospray tandem mass spectrometry method employed a deuterium-labeled caffeine internal standard and selected reaction monitoring detection. Up to nine parallel caffeine bands on a single plate were sampled in a single surface scanning experiment requiring 35 min at a surface scan rate of 44 {mu}m/s. A reversed-phase HPLC/UV caffeine assay was developed in parallel to assess the mass spectrometry method performance. Limits of detection for the HPLC/UV and thin-layer chromatography/electrospray tandem mass spectrometry methodsmore » determined from the calibration curve statistics were 0.20 ng injected (0.50 {mu}L) and 1.0 ng spotted on the plate, respectively. Spike recoveries with standards and real samples ranged between 97 and 106% for both methods. The caffeine content of three diet soft drinks (Diet Coke, Diet Cherry Coke, Diet Pepsi) and three diet sport drinks (Diet Turbo Tea, Speed Stack Grape, Speed Stack Fruit Punch) was measured. The HPLC/UV and mass spectrometry determinations were in general agreement, and these values were consistent with the quoted values for two of the three diet colas. In the case of Diet Cherry Coke and the diet sports drinks, the determined caffeine amounts using both methods were consistently higher (by 8% or more) than the literature values.« less

Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

NASA Astrophysics Data System (ADS)

Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

2017-10-01

We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

NASA Technical Reports Server (NTRS)

Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Hepp, Aloysius F.

2003-01-01

Ternary single-source precursors were used to deposit CuInS2 thin films using chemical spray pyrolysis. We investigated the effect of the film composition on texture, secondary phase formation, and grain size. As-grown films were most often In-rich. They became more (204/220)-oriented as indium concentration increased, and always contained a yet unidentified secondary phase. The (112)-prefened orientation became more pronounced as the film composition became more Cu-rich. The secondary phase was determined to be an In-rich compound based on composition analysis and Raman spectroscopy. In addition, as-grown Cu-rich (112)-oriented films did not exhibit the In-rich compound. Depositing a thin Cu layer prior to the growth of CuInS2 increased the maximum grain size from - 0.5 micron to - 1 micron, and prevented the formation of the In-rich secondary phase.

Cryo-mediated exfoliation and fracturing of layered materials into 2D quantum dots

PubMed Central

Wang, Yan; Liu, Yang; Zhang, Jianfang; Wu, Jingjie; Xu, Hui; Wen, Xiewen; Zhang, Xiang; Tiwary, Chandra Sekhar; Yang, Wei; Vajtai, Robert; Zhang, Yong; Chopra, Nitin; Odeh, Ihab Nizar; Wu, Yucheng; Ajayan, Pulickel M.

2017-01-01

Atomically thin quantum dots from layered materials promise new science and applications, but their scalable synthesis and separation have been challenging. We demonstrate a universal approach for the preparation of quantum dots from a series of materials, such as graphite, MoS2, WS2, h-BN, TiS2, NbS2, Bi2Se3, MoTe2, Sb2Te3, etc., using a cryo-mediated liquid-phase exfoliation and fracturing process. The method relies on liquid nitrogen pretreatment of bulk layered materials before exfoliation and breakdown into atomically thin two-dimensional quantum dots of few-nanometer lateral dimensions, exhibiting size-confined optical properties. This process is efficient for a variety of common solvents with a wide range of surface tension parameters and eliminates the use of surfactants, resulting in pristine quantum dots without surfactant covering or chemical modification. PMID:29250597

Self-Assembled Multilayer Structure and Enhanced Thermochromic Performance of Spinodally Decomposed TiO2-VO2 Thin Film.

PubMed

Sun, Guangyao; Zhou, Huaijuan; Cao, Xun; Li, Rong; Tazawa, Masato; Okada, Masahisa; Jin, Ping

2016-03-23

Composite films of VO2-TiO2 were deposited on sapphire (11-20) substrate by cosputtering method. Self-assembled well-ordered multilayer structure with alternating Ti- and V-rich epitaxial thin layer was obtained by thermal annealing via a spinodal decomposition mechanism. The structured thermochromic films demonstrate superior optical modulation upon phase transition, with significantly reduced transition temperature. The results provide a facile and novel approach to fabricate smart structures with excellent performance.

Mg2Sn heterostructures on Si(111) substrate

NASA Astrophysics Data System (ADS)

Dózsa, L.; Galkin, N. G.; Pécz, B.; Osváth, Z.; Zolnai, Zs.; Németh, A.; Galkin, K. N.; Chernev, I. M.; Dotsenko, S. A.

2017-05-01

Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg2Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg2Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg2Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg2Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg2Sn layer. The measurements indicate the necessity of protective layer grown over the Mg2Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

Characterization of zinc oxide thin film for pH detector

NASA Astrophysics Data System (ADS)

Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

2017-03-01

This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

Effect of processing parameters on the formation of C{sub f}/LAS composites/Ag−Cu−Ti/TC4 brazed joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Duo; Niu, Hongwei

C{sub f}/LAS composites were successfully jointed to TC4 alloy with Ag−Cu−Ti filler by vacuum brazing. The interfacial microstructure of TC4/C{sub f}/LAS composites joints was characterized by employing scanning electron microscope (SEM), energy dispersive spectrometer (EDS), X-diffraction (XRD) and transmission electron microscopy (TEM). The determination of the thin interfacial reaction layer (TiSi{sub 2} + TiC layer) was realized by TEM. The effect of holding time on the interfacial microstructure and shear strength were investigated. With the increasing holding time, the thickness of diffusion layer, Ti{sub 3}Cu{sub 4} layer, and TiSi{sub 2} + TiC layer increased obviously, on the contrary, that ofmore » Ti−Cu intermetallic compound layers decreased gradually. Besides, blocky Ti{sub 3}Cu{sub 4} phase was coarsened when the joint was brazed at 890 °C for 20 min, which deteriorated the mechanical properties of the joint dramatically. The interfacial evolution of TC4/C{sub f}/LAS composites joint and the formation of TiSi{sub 2}, TiC, Ti{sub 3}Cu{sub 4}, TiCu and Ti{sub 2}Cu phases were expounded. The maximum shear strength of 26.4 MPa was obtained when brazed at 890 °C for 10 min. - Highlights: •The thin interface reaction layer was determined to be TiSi{sub 2} + TiC layer by TEM. •Holding time had influence on the interfacial microstructure and joint properties. •Microstructural evolution mechanism and reactions of brazed joints were expounded.« less

Processes that generate and deplete liquid water and snow in thin midlevel mixed-phase clouds

NASA Astrophysics Data System (ADS)

Smith, Adam J.; Larson, Vincent E.; Niu, Jianguo; Kankiewicz, J. Adam; Carey, Lawrence D.

2009-06-01

This paper uses a numerical model to investigate microphysical, radiative, and dynamical processes in mixed-phase altostratocumulus clouds. Three cloud cases are chosen for study, each of which was observed by aircraft during the fifth or ninth Complex Layered Cloud Experiment (CLEX). These three clouds are numerically modeled using large-eddy simulation (LES). The observed and modeled clouds consist of a mixed-phase layer with a quasi-adiabatic profile of liquid, and a virga layer below that consists of snow. A budget of cloud (liquid) water mixing ratio is constructed from the simulations. It shows that large-scale ascent/descent, radiative cooling/heating, turbulent transport, and microphysical processes are all significant. Liquid is depleted indirectly via depositional growth of snow (the Bergeron-Findeisen process). This process is more influential than depletion of liquid via accretional growth of snow. Also constructed is a budget of snow mixing ratio, which turns out to be somewhat simpler. It shows that snow grows by deposition in and below the liquid (mixed-phase) layer, and sublimates in the remainder of the virga region below. The deposition and sublimation are balanced primarily by sedimentation, which transports the snow from the growth region to the sublimation region below. In our three clouds, the vertical extent of the virga layer is influenced more by the profile of saturation ratio below the liquid (mixed-phase) layer than by the mixing ratio of snow at the top of the virga layer.

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Phase of an optical wave as an additional degree of freedom in optical information processing systems based on optical bistability

NASA Astrophysics Data System (ADS)

Basharov, Askhat M.

1995-10-01

It is shown theoretically that additional illumination by a squeezed field of a thin layer of two-level atoms, which interact with a resonant coherent electromagnetic wave, results in bistable transmission/reflection of this wave. This bistability depends strongly on the difference between the phases of the coherent and squeezed fields.

Metallic behavior of lanthanum disilicide

NASA Technical Reports Server (NTRS)

Long, Robert G.; Bost, M. C.; Mahan, John E.

1988-01-01

Polycrystalline thin films of LaSi2 were prepared by reaction of sputter-deposited lanthanum layers with silicon wafers. Samples of the low-temperature tetragonal and the high-temperature orthorhombic phases were separately obtained. The room-temperature intrinsic resistivities were 24 and 57 microohm cm for the low- and high-temperature structures, respectively. Although lanthanum disilicide had been previously reported to be a semiconductor, classical metallic behavior was found for both phases.

Numerical simulation of drop impact on a thin film: the origin of the droplets in the splashing regime

NASA Astrophysics Data System (ADS)

Xie, Zhihua; Che, Zhizhao; Ismail, Renad; Pain, Chris; Matar, Omar

2015-11-01

Drop impact on a liquid layer is a feature of numerous multiphase flow problems, and has been the subject of numerous theoretical, experimental and numerical investigations. In the splashing regime, however, little attention has been focused on the origin of the droplets that are formed during the splashing process. The objective of this study is to investigate this issue numerically in order to improve our understanding of the mechanisms underlying splashing as a function of the relevant system parameters. In contrast to the conventional two-phase flow approach, commonly used to simulate splashing, here, a three-dimensional, three-phase flow model, with adaptive, unstructured meshing, is employed to study the liquid (droplet) - gas (surrounding air) - liquid (thin film) system. In the cases to be presented, both liquid phases have the same fluid property, although, clearly, our method can be used in the more general case of two different liquids. Numerical results of droplet impact on a thin film are analysed to determine whether the origin of the droplets following impact corresponds to the mother drop, or the thin film, or both. EPSRC Programme Grant, MEMPHIS, EP/K0039761/1.

Octahedral tilt independent magnetism in confined GdTiO3 films

NASA Astrophysics Data System (ADS)

Need, R. F.; Isaac, B. J.; Kirby, B. J.; Borchers, J. A.; Stemmer, S.; Wilson, Stephen D.

2018-03-01

Low temperature polarized neutron reflectometry measurements are presented, exploring the evolution of ferrimagnetism in thin GdTiO3 films embedded within a SrTiO3 matrix. In GdTiO3 films thinner than ˜4 nm, the TiO6 octahedral tilts endemic to GdTiO3 coherently relax toward the undistorted, cubic phase of SrTiO3. Our measurements indicate that the ferrimagnetic state within the GdTiO3 layers survives as these TiO6 octahedral tilts are suppressed. Furthermore, our data suggest that layers of suppressed magnetization (i.e., magnetic dead layers) develop within the GdTiO3 layer at each GdTiO3/SrTiO3 interface and explain the apparent magnetization suppression observed in thin GdTiO3 films when using volume-averaged techniques. Our data show that the low temperature magnetic moment inherent to the core GdTiO3 layers is only weakly impacted as the octahedral tilt angles are suppressed by more than 50% and the t2 g bandwidth is dramatically renormalized.

Phase Competition Induced Bio-Electrochemical Resistance and Bio-Compatibility Effect in Nanocrystalline Zr x -Cu100-x Thin Films.

PubMed

Badhirappan, Geetha Priyadarshini; Nallasivam, Vignesh; Varadarajan, Madhuri; Leobeemrao, Vasantha Priya; Bose, Sivakumar; Venugopal, Elakkiya; Rajendran, Selvakumar; Angleo, Peter Chrysologue

2018-07-01

Nano-crystalline Zrx-Cu100-x (x = 20-100 at.%) thin films with thickness ranging from 50 to 185 nm were deposited by magnetron co-sputtering with individual Zr and Cu targets. The as-sputtered thin films were characterized by Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Glancing Incidence X-ray Diffraction (GIXRD) for structural and morphological properties. The crystallite size was found to decrease from 57 nm to 37 nm upon increasing the Zr content from 20 to 30 at.% with slight increase in the lattice strain from 0.17 to 0.33%. Further, increase in Zr content to 40 at.% leads to increase in the crystallite size to 57 nm due to stabilization of C10Zr7 phase along with the presence of nanocrystalline Cu-Zr phase. A bimodal distribution of grain size was observed from FE-SEM micrograph was attributed to the highest surface roughness in Zr30Cu70 thin films comprised of Cu10Zr7, Cu9Zr2, Cu-Zr intermetallic phases. In-vitro electrochemical behaviors of nano-crystalline Zrx-Cu100-x thin films in simulated body fluid (SBF) were investigated using potentiodynamic polarization studies. Electrochemical impedance spectroscopy (EIS) data fitting by equivalent electrical circuit fit model suggests that inner bulk layer contributes to high bio-corrosion resistance in Zrx-Cu100-x thin films with increase in Zr content. The results of cyto-compatibility assay suggested that Zr-Cu thin film did not introduce cytotoxicity to osteoblast cells, indicating its suitability as a bio-coating for minimally invasive medical devices.

Compensation for Phase Anisotropy of a Metal Reflector

NASA Technical Reports Server (NTRS)

Hong, John

2007-01-01

A method of compensation for the polarization- dependent phase anisotropy of a metal reflector has been proposed. The essence of the method is to coat the reflector with multiple thin alternating layers of two dielectrics that have different indices of refraction, so as to introduce an opposing polarization-dependent phase anisotropy. The anisotropy in question is a phenomenon that occurs in reflection of light at other than normal incidence: For a given plane wave having components polarized parallel (p) and perpendicular (s) to the plane of incidence, the phase of s-polarized reflected light differs from the phase p-polarized light by an amount that depends on the angle of incidence and the complex index of refraction of the metal. The magnitude of the phase difference is zero at zero angle of incidence (normal incidence) and increases with the angle of incidence. This anisotropy is analogous to a phase anisotropy that occurs in propagation of light through a uniaxial dielectric crystal. In such a case, another uniaxial crystal that has the same orientation but opposite birefringence can be used to cancel the phase anisotropy. Although it would be difficult to prepare a birefringent material in a form suitable for application to the curved surface of a typical metal reflector in an optical instrument, it should be possible to effect the desired cancellation of phase anisotropy by exploiting the form birefringence of multiple thin dielectric layers. (The term "form birefringence" can be defined loosely as birefringence arising, in part, from a regular array of alternating subwavelength regions having different indices of refraction.)

Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors.

PubMed

Gu, Zhi-Gang; Chen, Shan-Ci; Fu, Wen-Qiang; Zheng, Qingdong; Zhang, Jian

2017-03-01

Metal-organic framework (MOF) thin films are important in the application of sensors and devices. However, the application of MOF thin films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO 2 dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b']dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO 2 and two electrodes on the semiconducting film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu 3 (BTC) 2 , BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO 2 -based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin film in OFETs will offer an effective approach for designing a new kind of materials for the OFET application.

Preparation and characterization of ZnS thin films by the chemical bath deposition method (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ando, Shizutoshi; Iwashita, Taisuke

2017-06-01

Nowadays, the conversion efficiency of Cu(In･Ga)Se2 (CIGS)-based solar cell already reached over 20%. CdS thin films prepared by chemical bath deposition (CBD) method are used for CIGS-based thin film solar cells as the buffer layer. Over the past several years, a considerable number of studies have been conducted on ZnS buffer layer prepared by CBD in order to improve in conversion efficiency of CIGS-based solar cells. In addition, application to CIGS-based solar cell of ZnS buffer layer is expected as an eco-friendly solar cell by cadmium-free. However, it was found that ZnS thin films prepared by CBD included ZnO or Zn(OH)2 as different phase [1]. Nakata et. al reported that the conversion efficiency of CIGS-based solar cell using ZnS buffer layer (CBD-ZnS/CIGS) reached over 18% [2]. The problem which we have to consider next is improvement in crystallinity of ZnS thin films prepared by CBD. In this work, we prepared ZnS thin films on quarts (Si02) and SnO2/glass substrates by CBD with the self-catalysis growth process in order to improve crystallinity and quality of CBD-ZnS thin films. The solution to use for CBD were prepared by mixture of 0.2M ZnI2 or ZnSO4, 0.6M (NH2)2CS and 8.0M NH3 aq. In the first, we prepared the particles of ZnS on Si02 or SnO2/glass substrates by CBD at 80° for 20 min as initial nucleus (1st step ). After that, the particles of ZnS on Si02 or SnO2/glass substrates grew up to be ZnS thin films by CBD method at 80° for 40 min again (2nd step). We found that the surface of ZnS thin films by CBD with the self-catalyst growth process was flat and smooth. Consequently, we concluded that the CBD technique with self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement of crystallinity of ZnS thin films on SnO2/glass. [1] J.Vidal et,al., Thin Solid Films 419 (2002) 118. [2] T.Nakata et.al., Jpn. J. Appl. Phys. 41(2B), L165-L167 (2002)

Preparation of Single-Layer MoS 2xSe 2(1-x) and Mo xW 1-xS 2 Nanosheets with High-Concentration Metallic 1T Phase

DOE PAGES

Tan, Chaoliang; Zhao, Wei; Chaturvedi, Apoorva; ...

2016-02-24

The high-yield and scalable production of single-layer ternary transition metal dichalcogenide nanosheets with ≈66% of metallic 1T phase, including MoS 2xSe 2(1-x) and Mo xW 1-xS 2 is here achieved via electrochemical Li-intercalation and the exfoliation method. Thin film MoS 2xSe 2(1-x) nanosheets drop-cast on a fluorine-doped tin oxide substrate are used as an efficient electrocatalyst on the counter electrode for the tri-iodide reduction in a dye-sensitized solar cell.

Alkaloid profiles of Mimosa tenuiflora and associated methods of analysis

USDA-ARS?s Scientific Manuscript database

The alkaloid contents of the leaves and seeds of M. tenuiflora collected from northeastern Brazil were studied. Alkaloids were isolated by classical acid/base extraction procedures and by cation exchange solid phase extraction. The crude alkaloid fractions were then analysed by thin layer chromatogr...

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

PubMed Central

Sundberg, Pia

2014-01-01

Summary The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

Layered nano-gratings by electron beam writing to form 3-level diffractive optical elements for 3D phase-offset holographic lithography.

PubMed

Yuan, Liang Leon; Herman, Peter R

2015-12-21

A multi-level nanophotonic structure is a major goal in providing advanced optical functionalities as found in photonic crystals and metamaterials. A three-level nano-grating phase mask has been fabricated in an electron-beam resist (ma-N) to meet the requirement of holographic generation of a diamond-like 3D nanostructure in photoresist by a single exposure step. A 2D mask with 600 nm periodicity is presented for generating first order diffracted beams with a preferred π/2 phase shift on the X- and Y-axes and with sufficient 1(st) order diffraction efficiency of 3.5% at 800 nm wavelength for creating a 3D periodic nanostructure in SU-8 photoresist. The resulting 3D structure is anticipated to provide an 8% complete photonic band gap (PBG) upon silicon inversion. A thin SiO2 layer was used to isolate the grating layers and multiple spin-coating steps served to planarize the final resist layer. A reversible soft coating (aquaSAVE) was introduced to enable SEM inspection and verification of each insulating grating layer. This e-beam lithographic method is extensible to assembling multiple layers of a nanophotonic structure.

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

NASA Astrophysics Data System (ADS)

Deshmukh, S. G.; Jariwala, Akshay; Agarwal, Anubha; Patel, Chetna; Panchal, A. K.; Kheraj, Vipul

2016-04-01

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grain size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm-1 and 1094 cm-1. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.

Engineering helimagnetism in MnSi thin films

NASA Astrophysics Data System (ADS)

Zhang, S. L.; Chalasani, R.; Baker, A. A.; Steinke, N.-J.; Figueroa, A. I.; Kohn, A.; van der Laan, G.; Hesjedal, T.

2016-01-01

Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ˜18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

NASA Astrophysics Data System (ADS)

Hannachi, Amira; Maghraoui-Meherzi, Hager

2017-03-01

Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like.

A Simulation of the Front End Signal Digitization for the ATLAS Muon Spectrometer thin RPC trigger upgrade project

NASA Astrophysics Data System (ADS)

Meng, Xiangting; Chapman, John; Levin, Daniel; Dai, Tiesheng; Zhu, Junjie; Zhou, Bing; Um Atlas Group Team

2016-03-01

The ATLAS Muon Spectrometer Phase-I (and Phase-II) upgrade includes the BIS78 muon trigger detector project: two sets of eight very thin Resistive Place Chambers (tRPCs) combined with small Monitored Drift Tube (MDT) chambers in the pseudorapidity region 1<| η|<1.3. The tRPCs will be comprised of triplet readout layer in each of the eta and azimuthal phi coordinates, with about 400 readout strips per layer. The anticipated hit rate is 100-200 kHz per strip. Digitization of the strip signals will be done by 32-channel CERN HPTDC chips. The HPTDC is a highly configurable ASIC designed by the CERN Microelectronics group. It can work in both trigger and trigger-less modes, be readout in parallel or serially. For Phase-I operation, a stringent latency requirement of 43 bunch crossings (1075 ns) is imposed. The latency budget for the front end digitization must be kept to a minimal value, ideally less than 350 ns. We conducted detailed HPTDC latency simulations using the Behavioral Verilog code from the CERN group. We will report the results of these simulations run for the anticipated detector operating environment and for various HPTDC configurations.

Lead zirconate titanate (PZT)-based thin film capacitors for embedded passive applications

NASA Astrophysics Data System (ADS)

Kim, Taeyun

Investigations on the key processing parameters and properties relationship for lead zirconate titanate (PZT, 52/48) based thin film capacitors for embedded passive capacitor application were performed using electroless Ni coated Cu foils as substrates. Undoped and Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil by chemical solution deposition. For PZT (52/48) thin film capacitors on electroless Ni coated Cu foil, voltage independent (zero tunability) capacitance behavior was observed. Dielectric constant reduced to more than half of the identical capacitor processed on Pt/SiO2/Si. Dielectric properties of the capacitors were mostly dependent on the crystallization temperature. Capacitance densities of almost 350 nF/cm2 and 0.02˜0.03 of loss tangent were routinely measured for capacitors crystallized at 575˜600°C. Leakage current showed dependence on film thickness and crystallization temperature. From a two-capacitor model, the existence of a low permittivity interface layer (permittivity ˜30) was suggested. For Ca-doped PZT (52/48) thin film capacitors prepared on Pt, typical ferroelectric and dielectric properties were measured up to 5 mol% Ca doping. When Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil, phase stability was influenced by Ca doping and phosphorous content. Dielectric properties showed dependence on the crystallization temperature and phosphorous content. Capacitance density of ˜400 nF/cm2 was achieved, which is an improvement by more than 30% compared to undoped composition. Ca doping also reduced the temperature coefficient of capacitance (TCC) less than 10%, all of them were consistent in satisfying the requirements of embedded passive capacitor. Leakage current density was not affected significantly by doping. To tailor the dielectric and reliability properties, ZrO2 was selected as buffer layer between PZT and electroless Ni. Only RF magnetron sputtering process could yield stable ZrO2 layers on electroless Ni coated Cu foil. Other processes resulted in secondary phase formation, which supports the reaction between PZT capacitor and electroless Ni might be dominated by phosphorous component. (Abstract shortened by UMI.)

Laser-induced phase separation of silicon carbide

PubMed Central

Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

2016-01-01

Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

All-optical tuning of EIT-like dielectric metasurfaces by means of chalcogenide phase change materials.

PubMed

Petronijevic, E; Sibilia, C

2016-12-26

Electromagnetically induced transparency (EIT) is a pump-induced narrowband transparency window within an absorption line of the probe beam spectrum in an atomic system. In this paper we propose a way to bring together the all-dielectric metamaterials to have EIT-like effects and to optically tune the response by hybridizing them with a layer of a phase change material. We propose a design of the metamaterial based on Si nanoresonators that can support an EIT-like resonant response. On the top of the resonators we consider a thin layer of a chalcogenide phase change material, which we will use to tune the optical response. Our choice is Ge₂Sb₂Te₅ (GST), since it has two stable phases at room temperature, namely amorphous and crystalline, between which it can be switched quickly, nonvolatively and reversibly, sustaining a large number of switching cycles. They differ in optical properties, while still having moderately low losses in telecom range. Since such dielectric resonators do not have non-radiative losses of metals around 1550nm, they can lead to a high-Q factor of the EIT-like response in this range. Firstly, we optimize the starting structure so that it gives an EIT-like response at 1550 nm when the GST layer is in the amorphous state. Our starting design uses glass as a substrate, but we also consider implementation in SOI technology. If we then switch the thin layer of GST to its crystalline phase, which has higher losses, the EIT-like response is red shifted, providing around 10:1 contrast at 1550nm. This reversible tuning can be done with an ns visible pulsed laser. We discuss the results of the simulation of the dielectric metasurface for different configurations and the tuning possibility.

A Simple Process for Synthesis of Transparent Thin Films of Molybdenum Trioxide in the Orthorhombic Phase ( α-MoO3)

NASA Astrophysics Data System (ADS)

Chibane, Loundja; Belkaid, Mohamed Said; Zirmi, Rachid; Moussi, Abderrahmane

2017-04-01

Transparent orthorhombic molybdenum trioxide (α-MoO3) thin films were prepared on glass substrates by sol-gel dip coating technique of a quality comparable to those prepared by more sophisticated techniques regarded as very costly and difficult to carry out. The prepared films were annealed in air at different temperatures in the range of 150-350°C. X-ray diffraction analysis of the films prepared at 250°C and 350°C confirmed the formation of a single-phase of MoO3 in an orthorhombic crystal system (α-MoO3). Scanning electron microscopy of the films annealed at 350°C indicated a stack of nano-layers with thickness of approximately 30 nm-40 nm. Fourier transform infrared transmittance analysis revealed the Mo=O stretching vibration, which is an indicator of the layered orthorhombic MoO3 phase. Energy dispersive x-ray analysis confirmed the existence of Mo and O in the deposited films. A maximum optical transmittance of 82% in the visible range was obtained from the films annealed at 350°C. The band gap value of the films was evaluated and it was in the range of 3.28 eV-3.40 eV. The obtained results showed that the α-MoO3 thin films prepared at 350°C exhibit good structural, chemical, and optical properties, which might be of interest to the photovoltaic and optoelectronic devices.

Surface Structure of Yeast Protoplasts

PubMed Central

Streiblová, Eva

1968-01-01

The fine structure of the yeast cell wall during protoplast formation was studied by means of phase-contrast microscopy and the freeze-etching technique. The freeze-etching results indicated that at least in some cases the entire wall substance was not removed from the surface of the protoplasts. After a treatment of 30 min to 3 hr with 2% snail enzymes, an innermost thin wall layer as well as remnants of the fibrillar middle layer sometimes could be demonstrated. Images PMID:4867751

Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

PubMed

Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

2009-09-07

We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

NASA Astrophysics Data System (ADS)

Fong, S. W.; Sood, A.; Chen, L.; Kumari, N.; Asheghi, M.; Goodson, K. E.; Gibson, G. A.; Wong, H.-S. P.

2016-07-01

In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO2/Al2O3 and SiO2/Si3N4. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100-500 K), show that amorphous thin-film multilayer SiO2/Si3N4 and SiO2/Al2O3 exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO2/Al2O3, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 1028 m-3 for SiO2 and 10.2 → 8.27 × 1028 m-3 for Al2O3) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m2 K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

Resolving the Chemically Discrete Structure of Synthetic Borophene Polymorphs.

PubMed

Campbell, Gavin P; Mannix, Andrew J; Emery, Jonathan D; Lee, Tien-Lin; Guisinger, Nathan P; Hersam, Mark C; Bedzyk, Michael J

2018-05-09

Atomically thin two-dimensional (2D) materials exhibit superlative properties dictated by their intralayer atomic structure, which is typically derived from a limited number of thermodynamically stable bulk layered crystals (e.g., graphene from graphite). The growth of entirely synthetic 2D crystals, those with no corresponding bulk allotrope, would circumvent this dependence upon bulk thermodynamics and substantially expand the phase space available for structure-property engineering of 2D materials. However, it remains unclear if synthetic 2D materials can exist as structurally and chemically distinct layers anchored by van der Waals (vdW) forces, as opposed to strongly bound adlayers. Here, we show that atomically thin sheets of boron (i.e., borophene) grown on the Ag(111) surface exhibit a vdW-like structure without a corresponding bulk allotrope. Using X-ray standing wave-excited X-ray photoelectron spectroscopy, the positions of boron in multiple chemical states are resolved with sub-angström spatial resolution, revealing that the borophene forms a single planar layer that is 2.4 Å above the unreconstructed Ag surface. Moreover, our results reveal that multiple borophene phases exhibit these characteristics, denoting a unique form of polymorphism consistent with recent predictions. This observation of synthetic borophene as chemically discrete from the growth substrate suggests that it is possible to engineer a much wider variety of 2D materials than those accessible through bulk layered crystal structures.

Condensation in Supernova Ejecta at High Spatial Resolution

NASA Astrophysics Data System (ADS)

Fedkin, A. V.; Meyer, B. S.; Grossman, L.; Desch, S. J.

2009-03-01

^44Ti-rich TiC condenses before graphite in SN ejecta only if thin sub-layers of the main burning zones mix together; such mixing is also needed to form Fe-olivine. High-T phases change from carbides to oxides along composition gradients within the He/N zone.

Green binary and phase shifting mask

NASA Astrophysics Data System (ADS)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2001-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Progress with polycrystalline silicon thin-film solar cells on glass at UNSW

NASA Astrophysics Data System (ADS)

Aberle, Armin G.

2006-01-01

Polycrystalline Si (pc-Si) thin-film solar cells on glass have long been considered a very promising approach for lowering the cost of photovoltaic (PV) solar electricity. In recent years there have been dramatic advances with this PV technology, and the first commercial modules (CSG Solar) are expected to hit the marketplace in 2006. The CSG modules are based on solid-phase crystallisation of plasma-enhanced chemical vapor deposition (PECVD) -deposited amorphous Si. Independent research in the author's group at the University of New South Wales (UNSW) during recent years has led to the development of three alternative pc-Si thin-film solar cells on glass—EVA, ALICIA and ALICE. Cell thickness is generally about 2 μm. The first two cells are made by vacuum evaporation, whereas ALICE cells can be made by either vacuum evaporation or PECVD. Evaporation has the advantage of being a fast and inexpensive Si deposition method. A crucial component of ALICIA and ALICE cells is a seed layer made on glass by metal-induced crystallisation of amorphous silicon (a-Si). The absorber layer of these cells is made by either ion-assisted Si epitaxy (ALICIA) or solid-phase epitaxy of a-Si (ALICE). This paper reports on the status of these three new thin-film PV technologies. All three solar cells seem to be capable of voltages of over 500 mV and, owing to their potentially inexpensive and scalable fabrication process, have significant industrial appeal.

When is one layer complete? Using simultaneous in-situ RHEED and x-ray reflectivity to map layer-by-layer thin-film oxide growth

NASA Astrophysics Data System (ADS)

Sullivan, M. C.; Ward, M. J.; Joress, H.; Gutierrez-Llorente, A.; White, A. E.; Woll, A.; Brock, J. D.

2014-03-01

The most popular tool for characterizing in situ layer-by-layer growth is Reflection High-Energy Electron Diffraction (RHEED). X-ray reflectivity can also be used to study layer-by-layer growth, as long as the incident angle of the x-rays is far from a Bragg peak. During layer-by-layer homoepitaxial growth, both the RHEED intensity and the reflected x-ray intensity will oscillate, and each complete oscillation indicates the addition of one layer of material. However, it is well documented, but not well understood, that the maxima in the RHEED intensity oscillations do not necessarily occur at the completion of a layer. In contrast, the maxima in the x-ray intensity oscillations do occur at the completion of a layer, thus the RHEED and x-ray oscillations are rarely in phase. We present our results on simultaneous in situ x-ray reflectivity and RHEED during layer-by-layer growth of SrTiO3 and discuss how to determine the completion of a layer for RHEED oscillations independent of the phase of the RHEED oscillation. Supported by DOE Office of Basic Energy Sciences Award DE-SC0001086, CHESS is supported by the NSF & NIH/NIGMS via NSF award DMR-0936384.

Patch testing with thin-layer chromatograms of chamomile tea in patients allergic to sesquiterpene lactones.

PubMed

Lundh, Kerstin; Gruvberger, Birgitta; Möller, Halvor; Persson, Lena; Hindsén, Monica; Zimerson, Erik; Svensson, Ake; Bruze, Magnus

2007-10-01

Patients with contact allergy to sesquiterpene lactones (SLs) are usually hypersensitive to Asteraceae plant products such as herbal teas. The objective of this study was to show sensitizers in chamomile tea by patch testing with thin-layer chromatograms. Tea made from German chamomile was separated by thin-layer chromatography. Strips of the thin-layer chromatograms were used for patch testing SL-positive patients. 15 (43%) of 35 patients tested positively to 1 or more spots on the thin-layer chromatogram, with many individual reaction patterns. Patch testing with thin-layer chromatograms of German chamomile tea showed the presence of several allergens.

Phase-resolved reflectance spectroscopy on layered turbid media

NASA Astrophysics Data System (ADS)

Hielscher, Andreas H.; Liu, Hanli; Chance, Britton; Tittel, Frank K.; Jacques, Steven L.

1995-05-01

In this study, we investigate the influence of layered tissue structures on the phase-resolved reflectance. As a particular example, we consider the affect of the skin, skull, and meninges on noninvasive blood oxygenation determination of the brain. In this case, it's important to know how accurate one can measure the absorption coefficient of the brain through the enclosing layers of different tissues. Experiments were performed on layered gelatin tissue phantoms and the results compared to diffusion theory. It is shown that when a high absorbing medium is placed on top of a low absorbing medium, the absorption coefficient of the lower layer is accessible. In the inverse case, where a low absorbing medium is placed on top of a high absorbing medium, the absorption coefficient of the underlying medium can only be determined if the differences in the absorption coefficient are small, or the top layer is very thin. Investigations on almost absorption and scattering free layers, like the cerebral fluid filled arachnoid, reveal that the determination of the absorption coefficient is barely affected by these kinds of structures.

Ultra-thin and -broadband microwave magnetic absorber enhanced by phase gradient metasurface incorporation

NASA Astrophysics Data System (ADS)

Fan, Ya; Wang, Jiafu; Li, Yongfeng; Pang, Yongqiang; Zheng, Lin; Xiang, Jiayu; Zhang, Jieqiu; Qu, Shaobo

2018-05-01

Based on the effect of anomalous reflection and refraction caused by the circularly cross-polarized phase gradient metasurface (PGM), an ultra-thin and -broadband composite absorber composed of metasurface and conventional magnetic absorbing film is proposed and demonstrated in this paper. In the case of keeping nearly the same thickness of absorbing layer, the equivalent thickness of magnetic absorbing film is enlarged by the effect of anomalous reflection and refraction, resulting in the expansion and improvement of the absorbing bandwidth and efficiency in low microwave frequency. A biarc metallic sub-cell for circularly crossed polarization is adopted to form a broadband phase gradient, by the means of rotating the Pancharatnam–Berry phases. As indicated in the experimental results, the fabricated 3.6 mm-thick absorber can averagely absorb microwave energy with the specular reflection below  ‑10 dB in the frequency interval of 2–12 GHz, which shows a good match with simulated results. Due to ultra-thin thickness and ultra-wide operating bandwidth, the proposed application of PGM in absorbing can provide an alternative way to enhance the absorbing property of current absorbing materials.

Convection Constraints and Current Sheet Thinning During the Substorm Growth Phase

NASA Astrophysics Data System (ADS)

Otto, A.; Hsieh, M.

2012-12-01

A typical property during the growth phase of geomagnetic substorms is the thinning of the near-Earth current sheet, most pronounced in the region between 6 and 15 RE. We propose that the cause for this current sheet thinning is convection from the midnight tail region to the dayside to replenish magnetospheric magnetic flux that is eroded at the dayside as a result of dayside reconnection. Slow (adiabatic) convection from the near-Earth tail region toward the dayside must conserve the entropy on magnetic field lines. This constraint prohibits a source of magnetic flux from a region further out in the magnetotail. Thus the near-Earth tail region is increasingly depleted of magnetic flux (the Erickson and Wolf [1980] problem) with entropy matching that of flux tubes that are eroded on the dayside. It is proposed that the magnetic flux depletion in the near-Earth tail forces the formation of thin current layers. The process is illustrated and examined by three-dimensional meso-scale MHD simulations. It is shown that the simulations yield a time scale, location, and other general characteristics of the current sheet evolution consistent with observations during the substorm growth phase. The developing thin current sheet is easily destabilized and can undergo localized reconnection events. We present properties of the thinning current sheet, the associated entropy evolution, examples of localized reconnection onset and we discuss the dependence of this process on external parameters such the global reconnection rate.

Theoretical analysis of optical properties of dielectric coatings dependence on substrate subsurface defects

NASA Astrophysics Data System (ADS)

Shen, Jian; Liu, Shouhua; Shen, Zicai; Shao, Jianda; Fan, Zhengxiu

2006-03-01

A model for refractive index of stratified dielectric substrate was put forward according to theories of inhomogeneous coatings. The substrate was divided into surface layer, subsurface layer and bulk layer along the normal direction of its surface. Both the surface layer (separated into N1 sublayers of uniform thickness) and subsurface layer (separated into N2 sublayers of uniform thickness), whose refractive indices have different statistical distributions, are equivalent to inhomogeneous coatings, respectively. And theoretical deduction was carried out by employing characteristic matrix method of optical coatings. An example of mathematical calculation for optical properties of dielectric coatings had been presented. The computing results indicate that substrate subsurface defects can bring about additional bulk scattering and change propagation characteristic in thin film and substrate. Therefore, reflectance, reflective phase shift and phase difference of an assembly of coatings and substrate deviate from ideal conditions. The model will provide some beneficial theory directions for improving optical properties of dielectric coatings via substrate surface modification.

Linear modeling of the soil-water partition coefficient normalized to organic carbon content by reversed-phase thin-layer chromatography.

PubMed

Andrić, Filip; Šegan, Sandra; Dramićanin, Aleksandra; Majstorović, Helena; Milojković-Opsenica, Dušanka

2016-08-05

Soil-water partition coefficient normalized to the organic carbon content (KOC) is one of the crucial properties influencing the fate of organic compounds in the environment. Chromatographic methods are well established alternative for direct sorption techniques used for KOC determination. The present work proposes reversed-phase thin-layer chromatography (RP-TLC) as a simpler, yet equally accurate method as officially recommended HPLC technique. Several TLC systems were studied including octadecyl-(RP18) and cyano-(CN) modified silica layers in combination with methanol-water and acetonitrile-water mixtures as mobile phases. In total 50 compounds of different molecular shape, size, and various ability to establish specific interactions were selected (phenols, beznodiazepines, triazine herbicides, and polyaromatic hydrocarbons). Calibration set of 29 compounds with known logKOC values determined by sorption experiments was used to build simple univariate calibrations, Principal Component Regression (PCR) and Partial Least Squares (PLS) models between logKOC and TLC retention parameters. Models exhibit good statistical performance, indicating that CN-layers contribute better to logKOC modeling than RP18-silica. The most promising TLC methods, officially recommended HPLC method, and four in silico estimation approaches have been compared by non-parametric Sum of Ranking Differences approach (SRD). The best estimations of logKOC values were achieved by simple univariate calibration of TLC retention data involving CN-silica layers and moderate content of methanol (40-50%v/v). They were ranked far well compared to the officially recommended HPLC method which was ranked in the middle. The worst estimates have been obtained from in silico computations based on octanol-water partition coefficient. Linear Solvation Energy Relationship study revealed that increased polarity of CN-layers over RP18 in combination with methanol-water mixtures is the key to better modeling of logKOC through significant diminishing of dipolar and proton accepting influence of the mobile phase as well as enhancing molar refractivity in excess of the chromatographic systems. Copyright © 2016 Elsevier B.V. All rights reserved.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Combined thin layer chromatography and gas chromatography with mass spectrometric analysis of lipid classes and fatty acids in malnourished polar bears (Ursus maritimus) which swam to Iceland.

PubMed

Eibler, Dorothee; Krüger, Sabine; Skírnisson, Karl; Vetter, Walter

2017-03-01

Between 2008 and 2011, four polar bears (Ursus maritimus) from the Greenland population swam and/or drifted on ice to Iceland where they arrived in very poor body condition. Body fat resources in these animals were only between 0% and 10% of the body weight (usually 25%). Here we studied the lipid composition in different tissues (adipose tissue if available, liver, kidney and muscle). Lipid classes were determined by thin layer chromatography (TLC) and on-column gas chromatography with mass spectrometry (GC/MS). The fatty acid pattern of total lipids and free fatty acids was analyzed by GC/MS in selected ion monitoring (SIM) mode. Additionally, cholesteryl esters and native fatty acid methyl esters, initially detected as zones in thin layer chromatograms, were enriched by solid phase extraction and quantified by GC/MS. The ratio of free fatty acids to native fatty acid methyl esters could be correlated with the remained body lipids in the polar bears and thus may also serve as a marker for other starving animals or even for humans. Copyright © 2017 Elsevier B.V. All rights reserved.

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

PubMed Central

2013-01-01

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377

High Performance Thin layer Chromatography: Densitometry Method for Determination of Rubraxanthone in the Stem Bark Extract of Garcinia cowa Roxb.

PubMed

Hamidi, Dachriyanus; Aulia, Hilyatul; Susanti, Meri

2017-01-01

Garcinia cowa is a medicinal plant widely grown in Southeast Asia and tropical countries. Various parts of this plant have been used in traditional folk medicine. The bark, latex, and root have been used as an antipyretic agent, while fruit and leaves have been used as an expectorant, for indigestion and improvement of blood circulation. This study aims to determine the concentration of rubraxanthone found in ethyl acetate extract of the stem bark of G. cowa by the high-performance thin-layer chromatography (HPTLC). HPTLC method was performed on precoated silica gel G 60 F254 plates using an HPTLC system with a developed mobile-phase system of chloroform: ethyl acetate: methanol: formic acid (86:6:3:5). A volume of 5 μL of standard and sample solutions was applied to the chromatographic plates. The plates were developed in saturated mode of twin trough chamber at room temperature. The method was validated based on linearity, accuracy, precision, limit of detection (LOD), limit of quantification (LOQ), and specificity. The spots were observed at ultraviolet 243 nm. The linearity of rubraxanthone was obtained between 52.5 and 157.5 ppm/spot. The LOD and LOQ were found to be 4.03 and 13.42 ppm/spot, respectively. The proposed method showed good linearity, precision, accuracy, and high sensitivity. Therefore, it may be applied for the quantification of rubraxanthone in ethyl acetate extract of the stem bark of G. cowa . High performance thin layer chromatography (HPTLC) method provides rapid qualitative and quantitative estimation of rubraxanthone as a marker com¬pound in G. cowa extract used for commercial productRubraxanthone found in ethyl acetate extracts of G. cowa was successfully quantified using HPTLC method. Abbreviations Used : TLC: Thin-layer chromatography, HPTLC: High-performance thin-layer chromatography, LOD: Limit of detection, LOQ: Limit of quantification, ICH: International Conference on Harmonization.

Nano-Crystalline Thermally Evaporated Bi2Se3 Thin Films Synthesized from Mechanically Milled Powder

NASA Astrophysics Data System (ADS)

Amara, A.; Abdennouri, N.; Drici, A.; Abdelkader, D.; Bououdina, M.; Chaffar Akkari, F.; Khemiri, N.; Kanzari, M.; Bernède, J. C.

2017-08-01

Bi2Se3 powder has been successfully synthesized via mechanical ball milling of bismuth and selenium as starting materials. X-ray diffraction characterization revealed the formation of the rhombohedral and orthorhombic phases of Bi2Se3 material belonging to systems with space groups R\\bar{3}m and Pbnm, respectively. The advantageous last finding is confirmed by the Rietveld refinement of the x-ray diffraction data. Furthermore, the analysis of the x-ray data of thermally deposited thin films revealed that both orthorhombic and rhombohedral phases are coexisting in the layer. The morphology of the ball milled powder was studied by scanning electron microscopy. The phase formation of the material is confirmed by Raman spectroscopy. M-H (Magnetization versus Magnetic field) curve indicates that Bi2Se3 powder has a ferromagnetic behavior. Additionally, absorbance and transmittance measurements were carried out on the obtained thermally evaporated thin films and yielded a band gap of 1.33 eV supporting the potential application of the heterogeneous rhombohedral/orthorhombic Bi2Se3 material in photovoltaics.

Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-δ thin films

NASA Astrophysics Data System (ADS)

Gauquelin, Nicolas; Zhang, Hao; Zhu, Guozhen; Wei, John Y. T.; Botton, Gianluigi A.

2018-05-01

We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-δ (YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity.

Ferroelectric thin film acoustic devices with electrical multiband switching ability.

PubMed

Ptashnik, Sergey V; Mikhailov, Anatoliy K; Yastrebov, Alexander V; Petrov, Peter K; Liu, Wei; Alford, Neil McN; Hirsch, Soeren; Kozyrev, Andrey B

2017-11-10

Design principles of a new class of microwave thin film bulk acoustic resonators with multiband resonance frequency switching ability are presented. The theory of the excitation of acoustic eigenmodes in multilayer ferroelectric structures is considered, and the principle of selectivity for resonator with an arbitrary number of ferroelectric layers is formulated. A so called "criterion function" is suggested that allows to determine the conditions for effective excitation at one selected resonance mode with suppression of other modes. The proposed theoretical approach is verifiedusing thepreexisting experimental data published elsewhere. Finally, the possible application of the two ferroelectric layers structures for switchable microwave overtone resonators, binary and quadrature phase-shift keying modulators are discussed. These devices could play a pivotal role in the miniaturization of microwave front-end antenna circuits.

Enhancing the stability of copper chromite catalysts for the selective hydrogenation of furfural using ALD overcoating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hongbo; Lei, Yu; Kropf, A. Jeremy

2014-08-01

The stability of a gas-phase furfural hydrogenation catalyst (CuCr2O4 center dot CuO) was enhanced by depositing a thin Al2O3 layer using atomic layer deposition (ALD). Based on temperature-programed reduction (TPR) measurements, the reduction temperature of Cu was raised significantly, and the activation energy for furfural reduction was decreased following the ALD treatment. Thinner ALD layers yielded higher furfural hydrogenation activities. X-ray absorption fine structure (XAFS) spectroscopy studies indicated that Cu1+/Cu-0 are the active species for furfural reduction.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Evidence for Cu2-xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Simsek Sanli, E.; Ramasse, Q. M.; Mainz, R.; Weber, A.; Abou-Ras, D.; Sigle, W.; van Aken, P. A.

2017-07-01

Cu(In,Ga)Se2 (CIGS)-based solar cells reach high power-conversion efficiencies of above 22%. In this work, a three-stage co-evaporation method was used for their fabrication. During the growth stages, the stoichiometry of the absorbers changes from Cu-poor ([Cu]/([In] + [Ga]) < 1) to Cu-rich ([Cu]/([In] + [Ga]) > 1) and finally becomes Cu-poor again when the growth process is completed. It is known that, according to the Cu-In-Ga-Se phase diagram, a Cu-rich growth leads to the presence of Cu2-xSe (x = 0-0.25), which is assumed to assist in recrystallization, grain growth, and defect annihilation in the CIGS layer. So far, Cu2-xSe precipitates with spatial extensions on the order of 10-100 nm have been detected only in Cu-rich CIGS layers. In the present work, we report Cu2-xSe platelets with widths of only a few atomic planes at grain boundaries and as inclusions within grains in a polycrystalline, Cu-poor CIGS layer, as evidenced by high-resolution scanning transmission electron microscopy (STEM). The chemistry of the Cu-Se secondary phase was analyzed by electron energy-loss spectroscopy, and STEM image simulation confirmed the identification of the detected phase. These results represent additional experimental evidence for the proposed topotactical growth model for Cu-Se-assisted CIGS thin-film formation under Cu-rich conditions.

Study of composite thin films for applications in high density data storage

NASA Astrophysics Data System (ADS)

Yuan, Hua

Granular Co-alloy + oxide thin films are currently used as the magnetic recording layer of perpendicular media in hard disk drives. The microstructure of these films is composed mainly of fine (7--10 nm) magnetic grains physically surrounded by oxide phases, which produce magnetic isolation of the grains. As a result, the magnetic switching volume is maintained as small as the physical grain size. Consequently, ample number of magnetic switching units can be obtained in one recording bit, in other words, higher signal to noise ratios (SNR) can be achieved. Therefore, a good understanding and control of the microstructure of the films is very important for high areal density magnetic recording media. Interlayers and seedlayers play important roles in controlling the microstructure in terms of grain size, grain size distribution, oxide segregation and orientation dispersion of the crystallographic texture. Developing novel interlayers or seedlayers with smaller grain size is a key approach to produce smaller grain size in the recording layer. This study focuses on how to achieve smaller grain sizes in the recording layer through novel interlayer/seedlayer materials and processes. It also discusses the resulting microstructure in smaller-grain-size thin films. Metal + oxide (e.g. Ru + SiO2) composite thin films were chosen as interlayer and seedlayer materials due to their unique segregated microstructure. Such layers can be grown epitaxially on top of fcc metal seedlayers with good orientation. It can also provide an epitaxial growth template for the subsequent magnetic layer (recording layer). The metal and oxide phases in the composite thin films are immiscible. The final microstructure of the interlayer depends on factors, such as, sputtering pressure, oxide species, oxide volume fraction, thickness, alloy composition, temperature etc. Moreover, it has been found that the microstructure of the composite thin films is affected mostly by two important factors---oxide volume fraction and sputtering pressure. The latter affects grain size and grain segregation through surface-diffusion modification and the self-shadowing effect. The composite Ru + oxide interlayers were found to have various microstructures under various sputtering conditions. Four characteristic microstructure zones can be identified as a function of oxide volume fraction and sputtering pressure---"percolated" (A), "maze" (T), "granular" (B) and "embedded" (C), based on which, a new structural zone model (SZM) is established for composite thin films. The granular microstructure of zone B is of particular interest for recording media application. The grain size of interlayers is a strong function of pressure, oxide species and oxide volume fraction. Magnetic layers grown on top of these interlayers were found to be significantly affected by the interlayer microstructure. One-to-one grain epitaxial growth is very difficult to achieve when the grain size is too small. As a result, the magnetic properties of smaller grain size magnetic layers deteriorate due to poor growth. This presents a huge challenge to high areal density magnetic recording media. A novel approach of Ar-ion etched Ru seedlayer, which can improve epitaxy between interlayer and magnetic layer is proposed. This method produces interlayer thin films of: (1) smaller grain size and higher nucleation density due to both a rougher seedlayer surface and an oxide addition in the interlayer; (2) good (00.2) texture due to the growth on top of the low pressure deposited Ru seedlayer; (3) dome-shape grain morphology due to the high pressure deposition. Therefore, a significant Ru grain size reduction with enhanced granular morphology and improved grain-to-grain epitaxy with the magnetic layer was achieved. High resolution transmission electron microscopy (TEM) techniques, such as, electron energy loss spectroscopy (EELS), energy-filtered TEM (EFTEM), energy-dispersive X-ray spectroscopy (EDS) and mapping, and high angle annular dark field (HAADF) imaging have been utilized to investigate elemental distribution and grain morphology in composite magnetic thin films of different grain sizes. An oxygen-rich grain shell of about 0.5 ˜ 1 nm thickness is often observed for most media with different grain sizes. Reducing the grain size increases surface to volume ratio. With more surface area, smaller grains are more vulnerable to oxidization, resulting in even greater influence of the oxide on the magnetic properties of the grains.

Method for bonding thin film thermocouples to ceramics

DOEpatents

Kreider, Kenneth G.

1993-01-01

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Effect of gradient dielectric coefficient in a functionally graded material (FGM) substrate on the propagation behavior of love waves in an FGM-piezoelectric layered structure.

PubMed

Cao, Xiaoshan; Shi, Junping; Jin, Feng

2012-06-01

The propagation behavior of Love waves in a layered structure that includes a functionally graded material (FGM) substrate carrying a piezoelectric thin film is investigated. Analytical solutions are obtained for both constant and gradient dielectric coefficients in the FGM substrate. Numerical results show that the gradient dielectric coefficient decreases phase velocity in any mode, and the electromechanical coupling factor significantly increases in the first- and secondorder modes. In some modes, the difference in Love waves' phase velocity between these two types of structure might be more than 1%, resulting in significant differences in frequency of the surface acoustic wave devices.

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

PubMed

An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

2015-10-01

Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

Formation of the YBa2Cu2NbOy Phase in Thin Films (POSTPRINT)

DTIC Science & Technology

2010-03-01

protective layer was deposited on the top of YBCNO film by dc sputtering . A 200 nm 200 nm area film was selected and cut with a Ga ion beam (30 kV...200 TEM at 200 kV. Samples for TEM were prepared using a focused ion beam (FIB (Eindhoven, The Netherlands)) microscope. For TEM examination, a thin Pt...by dc magnetron sputtering deposition of Ag with 93 mm thickness. Transport current measurements were made in liquid nitrogen with the 4-probe method

A study on the enhancement of opto-electronic properties of CdS thin films: seed-assisted fabrication

NASA Astrophysics Data System (ADS)

Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

2017-04-01

A novel method of fabricating chemical bath deposited CdS thin films (CBD-CdS) by using electrodeposited CdS (ED-CdS) as a seed layer is reported. The resulting thin, compact, uniform and adherent seed-assisted CdS films (ED/CBD-CdS) show enhanced effective surface area compared to both ED-CdS and CBD-CdS. The phase of these CdS films was determined to be hexagonal. The fabricated ED/CBD-CdS films show higher photoelectrochemical (PEC) cell efficiency than either ED-CdS and CBD-CdS thin films. Carrier concentration and flat band potential values for ED/CBD-CdS systems are also found to be superior compared to both ED-CdS and CBD-CdS systems.

Non-native three-dimensional block copolymer morphologies

DOE PAGES

Rahman, Atikur; Majewski, Pawel W.; Doerk, Gregory; ...

2016-12-22

Self-assembly is a powerful paradigm, wherein molecules spontaneously form ordered phases exhibiting well-defined nanoscale periodicity and shapes. However, the inherent energy-minimization aspect of self-assembly yields a very limited set of morphologies, such as lamellae or hexagonally packed cylinders. Here, we show how soft self-assembling materials—block copolymer thin films—can be manipulated to form a diverse library of previously unreported morphologies. In this iterative assembly process, each polymer layer acts as both a structural component of the final morphology and a template for directing the order of subsequent layers. Specifically, block copolymer films are immobilized on surfaces, and template successive layers throughmore » subtle surface topography. As a result, this strategy generates an enormous variety of three-dimensional morphologies that are absent in the native block copolymer phase diagram.« less

Non-native three-dimensional block copolymer morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahman, Atikur; Majewski, Pawel W.; Doerk, Gregory

Self-assembly is a powerful paradigm, wherein molecules spontaneously form ordered phases exhibiting well-defined nanoscale periodicity and shapes. However, the inherent energy-minimization aspect of self-assembly yields a very limited set of morphologies, such as lamellae or hexagonally packed cylinders. Here, we show how soft self-assembling materials—block copolymer thin films—can be manipulated to form a diverse library of previously unreported morphologies. In this iterative assembly process, each polymer layer acts as both a structural component of the final morphology and a template for directing the order of subsequent layers. Specifically, block copolymer films are immobilized on surfaces, and template successive layers throughmore » subtle surface topography. As a result, this strategy generates an enormous variety of three-dimensional morphologies that are absent in the native block copolymer phase diagram.« less

Characterization of titanyl phthalocyanine (TiOPc) thin films by microscopic and spectroscopic method

NASA Astrophysics Data System (ADS)

Skonieczny, R.; Makowiecki, J.; Bursa, B.; Krzykowski, A.; Szybowicz, M.

2018-02-01

The titanyl phthalocyanine (TiOPc) thin film deposited on glass, silicon and gold substrate have been studied using Raman spectroscopy, atomic force microscopy (AFM), absorption and profilometry measurements. The TiOPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The Raman spectra have been recorded using micro Raman system equipped with a confocal microscope. Using surface Raman mapping techni que with polarized Raman spectra the polymorphic forms of the TiOPc thin films distribution have been obtained. The AFM height and phase image were examined in order to find surface features and morphology of the thin films. Additionally to compare experimental results, structure optimization and vibrational spectra calculation of single TiOPc molecule were performed using DFT calculations. The received results showed that the parameters like polymorphic form, grain size, roughness of the surface in TiOPc thin films can well characterize the obtained organic thin films structures in terms of their use in optoelectronics and photovoltaics devices.

Influence of chemical ordering on the thermal conductivity and electronic relaxation in FePt thin films in heat assisted magnetic recording applications

DOE PAGES

Giri, Ashutosh; Wee, Sung Hun; Jain, Shikha; ...

2016-08-26

Here, we report on the out-of-plane thermal conductivities of tetragonal L1 0 FePt (001) easy-axis and cubic A1 FePt thin films via time-domain thermoreflectance over a temperature range from 133 K to 500 K. The out-of-plane thermal conductivity of the chemically ordered L10 phase with alternating Fe and Pt layers is ~23% greater than the thermal conductivity of the disordered A1 phase at room temperature and below. However, as temperature is increased above room temperature, the thermal conductivities of the two phases begin to converge. Molecular dynamics simulations on model FePt structures support our experimental findings and help shed moremore » light into the relative vibrational thermal transport properties of the L1 0 and A1 phases. Furthermore, unlike the varying temperature trends in the thermal conductivities of the two phases, the electronic scattering rates in the out-of-plane direction of the two phases are similar for the temperature range studied in this work.« less

Optical luminescence studies of diffusion times at the potassium ethyl xanthate adsorption layer on the surface of sphalerite minerals

NASA Astrophysics Data System (ADS)

Todoran, R.; Todoran, D.; Anitas, E. M.; Szakács, Zs

2016-08-01

We propose reflectance measurements as a method for the evaluation of the kinetics of adsorption processes, to compute the diffusion times of the adsorption products at the thin layers formed at the sphalerite natural mineral-potassium ethyl xanthate solution interface. The method is based on the intensity measurement of the reflected monochromatic radiation obtained from the mineral-xanthate thin layer as a function of time. These determinations were made at the thin layer formed between the sphalerite or activated sphalerite natural minerals with potassium ethyl xanthate, for different solutions concentrations and pH values at constant temperature. Diffusion times of desorbed molecular species into the liquid bring important information about the global kinetics of the ions in this phase during adsorption processes at interfaces. Analysing the time dependence of this parameter one concluded on the diffusion properties of the xanthate molecule in the solution depending on its concentration and pH, knowing that at the initial time these molecules had a uniform spread. This method enabled us to determine that, in time interval of approximately 35 minutes to achieve dynamic equilibrium in the formation of the interface layer, one had three different kinetic behaviours of our systems. In the first 5-8 min one had highly adsorbent character, the state of equilibrium is followed by low adsorbent properties. Gaining information on the adsorption kinetics in the case of xanthate on mineral surface leads to the optimization of the industrial froth flotation process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hanlei; May, Brian M.; Serrano-Sevillano, Jon

The surface configuration of pristine layered oxide cathode particles for Li-ion batteries significantly affects the electrochemical behavior, which is generally considered to be a thin rock-salt layer in the surface. Unfortunately, aside from its thin nature and spatial location on the surface, the true structural nature of this surface rock-salt layer remains largely unknown, creating the need to understand its configuration and the underlying mechanisms of formation. Using scanning transmission electron microscopy, we have found a correlation between the surface rock-salt formation and the crystal facets on pristine LiNi0.80Co0.15Al0.05O2 primary particles. It is found that the originally (01more » $$ \\overline{4}\\ $$) and (003) surfaces of the layered phase result in two kinds of rock-salt reconstructions: the (002) and (111) rock-salt surfaces, respectively. Stepped surface configurations are generated for both reconstructions. The (002) configuration is relatively flat with monoatomic steps while the (111) configuration shows significant surface roughening. Both reconstructions reduce the ionic and electronic conductivity of the cathode, leading to a reduced electrochemical performance.« less

Effect of an electric field on the structural and optical properties of fluorinated freely suspended smectic films

NASA Astrophysics Data System (ADS)

Śliwa, I.; Zakharov, A. V.

2017-12-01

Within the framework of the generalized mean-field model that takes into account the anisotropic interactions between the nearest neighbors of molecules forming freely suspended smectic films (FSSFs) and the stabilizing effects of the smectic-A (SmA)-air interface, a numerical study was performed of the structural, thermodynamic, and optical properties of these systems in the process of their layer-by-layer thinning. The results of calculating the disjoining pressure P, the average thickness of the smectic layers L, and the reflectivity index R of a FSSF formed by 5- n-alkyl-2-(4- n-(perfluoroalkyl-methylene oxide)-pentyl) (H10F5MOPP) molecules showed that these values undergo precipitous changes in the process of layer-bylayer thinning of the film. Calculations of R( T) as a function of temperature T exceeding the phase transition temperature of SmA into an isotropic state in the bulk of the liquid crystal material are in good agreement with the experimentally obtained data for the reflectivity of the FSSF formed by H10F5MOPP molecules.

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seed layer

NASA Astrophysics Data System (ADS)

Hu, Fang; Xu, Guizhou; You, Yurong; Zhang, Zhi; Xu, Zhan; Gong, Yuanyuan; Liu, Er; Zhang, Hongguo; Liu, Enke; Wang, Wenhong; Xu, Feng

2018-03-01

Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in antiferromagnetic spintronic devices. Herein, we report the preparation of Mn3Ga films in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on a thermally oxidized Si substrate. Large coercivity together with large anomalous Hall resistivity is found in the Ta-only sample with a mixed tetragonal phase. By increasing the thickness of the Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200 K. The abnormal Hall properties are proposed to be closely related to the frustrated spin structure of D019 Mn3Ga.

Stripping analysis of nanomolar perchlorate in drinking water with a voltammetric ion-selective electrode based on thin-layer liquid membrane.

PubMed

Kim, Yushin; Amemiya, Shigeru

2008-08-01

A highly sensitive analytical method is required for the assessment of nanomolar perchlorate contamination in drinking water as an emerging environmental problem. We developed the novel approach based on a voltammetric ion-selective electrode to enable the electrochemical detection of "redox-inactive" perchlorate at a nanomolar level without its electrolysis. The perchlorate-selective electrode is based on the submicrometer-thick plasticized poly(vinyl chloride) membrane spin-coated on the poly(3-octylthiophene)-modified gold electrode. The liquid membrane serves as the first thin-layer cell for ion-transfer stripping voltammetry to give low detection limits of 0.2-0.5 nM perchlorate in deionized water, commercial bottled water, and tap water under a rotating electrode configuration. The detection limits are not only much lower than the action limit (approximately 246 nM) set by the U.S. Environmental Protection Agency but also are comparable to the detection limits of the most sensitive analytical methods for detecting perchlorate, that is, ion chromatography coupled with a suppressed conductivity detector (0.55 nM) or electrospray ionization mass spectrometry (0.20-0.25 nM). The mass transfer of perchlorate in the thin-layer liquid membrane and aqueous sample as well as its transfer at the interface between the two phases were studied experimentally and theoretically to achieve the low detection limits. The advantages of ion-transfer stripping voltammetry with a thin-layer liquid membrane against traditional ion-selective potentiometry are demonstrated in terms of a detection limit, a response time, and selectivity.

Defect-driven flexochemical coupling in thin ferroelectric films

NASA Astrophysics Data System (ADS)

Eliseev, Eugene A.; Vorotiahin, Ivan S.; Fomichov, Yevhen M.; Glinchuk, Maya D.; Kalinin, Sergei V.; Genenko, Yuri A.; Morozovska, Anna N.

2018-01-01

Using the Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectrochemical coupling on the size effects in polar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultrathin layer of ambient screening charges, characterized by a surface screening length. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexochemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTi O3 films containing a layer of elastic defects. A nontrivial result is the persistence of ferroelectricity at film thicknesses below 4 nm, temperatures lower than 350 K, and relatively high surface screening length (˜0.1 nm ) . The origin of this phenomenon is the flexoelectric coupling leading to the rebuilding of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm. The ferroelectricity persistence is facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.

A Method for Atomic Layer Deposition of Complex Oxide Thin Films

DTIC Science & Technology

2012-12-01

characterization. Fourth, the phase of the crystallized film was analyzed in detail to deter- mine behavior of the films post-annealing. XRD was used extensively for...Schneider. Stacking of ceramic in- verse opals with different lattice constants. Journal of the American Ceramic Society, 95(7):2226–2235, July 2012. [52

Simultaneous Determination of Withanolide A and Bacoside A in Spansules by High-Performance Thin-Layer Chromatography

PubMed Central

Shinde, P B; Aragade, P D; Agrawal, M R; Deokate, U A; Khadabadi, S S

2011-01-01

The objective of this work was to develop and validate a simple, rapid, precise, and accurate high performance thin layer chromatography method for simultaneous determination of withanolide A and bacoside A in combined dosage form. The stationary phase used was silica gel G60F254. The mobile phase used was mixture of ethyl acetate: methanol: toluene: water (4:1:1:0.5 v/v/v/v). The detection of spots was carried out at 320 nm using absorbance reflectance mode. The method was validated in terms of linearity, accuracy, precision and specificity. The calibration curve was found to be linear between 200 to 800 ng/spot for withanolide A and 50 to 350 ng/spot for bacoside A. The limit of detection and limit of quantification for the withanolide A were found to be 3.05 and 10.06 ng/spot, respectively and for bacoside A 8.3 and 27.39 ng/spot, respectively. The proposed method can be successfully used to determine the drug content of marketed formulation. PMID:22303073

Simultaneous determination of withanolide a and bacoside a in spansules by high-performance thin-layer chromatography.

PubMed

Shinde, P B; Aragade, P D; Agrawal, M R; Deokate, U A; Khadabadi, S S

2011-03-01

The objective of this work was to develop and validate a simple, rapid, precise, and accurate high performance thin layer chromatography method for simultaneous determination of withanolide A and bacoside A in combined dosage form. The stationary phase used was silica gel G60F(254). The mobile phase used was mixture of ethyl acetate: methanol: toluene: water (4:1:1:0.5 v/v/v/v). The detection of spots was carried out at 320 nm using absorbance reflectance mode. The method was validated in terms of linearity, accuracy, precision and specificity. The calibration curve was found to be linear between 200 to 800 ng/spot for withanolide A and 50 to 350 ng/spot for bacoside A. The limit of detection and limit of quantification for the withanolide A were found to be 3.05 and 10.06 ng/spot, respectively and for bacoside A 8.3 and 27.39 ng/spot, respectively. The proposed method can be successfully used to determine the drug content of marketed formulation.

Effect-directed analysis via hyphenated high-performance thin-layer chromatography for bioanalytical profiling of sunflower leaves.

PubMed

Móricz, Ágnes M; Ott, Péter G; Yüce, Imanuel; Darcsi, András; Béni, Szabolcs; Morlock, Gertrud E

2018-01-19

High-performance thin-layer chromatography (HPTLC) coupled with effect-directed analysis was used for non-targeted screening of sunflower leaf extract for components exhibiting antioxidant, antibacterial and/or cholinesterase enzyme inhibitory effects. The active compounds were characterized by HPTLC-electrospray ionization-high resolution mass spectrometry (ESI-HRMS) and HPTLC-Direct Analysis in Real Time (DART)-MS/MS. The latter ambient ionization technique (less soft than ESI) resulted in oxidation and fragmentation products and characteristic fragment ions. NMR spectroscopy after targeted isolation via preparative normal phase flash chromatography and semi-preparative reversed phase high-performance liquid chromatography supported the identification of two diterpenes to be (-)-kaur-16-en-19-oic acid and 15-α-angeloyloxy-ent-kaur-16-en-19-oic acid. Both compounds found to be multi-potent as they inhibited acetylcholinesterase and butyrylcholinesterase and showed antibacterial effects against Gram-positive Bacillus subtilis and Gram-negative Aliivibrio fischeri bacteria. Kaurenoic acid was also active against the Gram-negative pepper pathogenic Xanthomonas euvesicatoria bacteria. Copyright © 2017 Elsevier B.V. All rights reserved.

On-chip ultra-thin layer chromatography and surface enhanced Raman spectroscopy.

PubMed

Chen, Jing; Abell, Justin; Huang, Yao-wen; Zhao, Yiping

2012-09-07

We demonstrate that silver nanorod (AgNR) array substrates can be used for on-chip separation and detection of chemical mixtures by combining ultra-thin layer chromatography (UTLC) and surface enhanced Raman spectroscopy (SERS). The UTLC-SERS plate consists of an AgNR array fabricated by oblique angle deposition. The capability of the AgNR substrates to separate the different compounds in a mixture was explored using a mixture of four dyes and a mixture of melamine and Rhodamine 6G at varied concentrations with different mobile phase solvents. After UTLC separation, spatially-resolved SERS spectra were collected along the mobile phase development direction and the intensities of specific SERS peaks from each component were used to generate chromatograms. The AgNR substrates demonstrate the potential for separating the test dyes with plate heights as low as 9.6 μm. The limits of detection are between 10(-5)-10(-6) M. Furthermore, we show that the coupling of UTLC with SERS improves the SERS detection specificity, as small amounts of target analytes can be separated from the interfering background components.

Structural and optical properties of MgxAl1-xHy gradient thin films: a combinatorial approach

NASA Astrophysics Data System (ADS)

Gremaud, R.; Borgschulte, A.; Chacon, C.; van Mechelen, J. L. M.; Schreuders, H.; Züttel, A.; Hjörvarsson, B.; Dam, B.; Griessen, R.

2006-07-01

The structural, optical and dc electrical properties of MgxAl1-x (0.2≤x≤0.9) gradient thin films covered with Pd/Mg are investigated before and after exposure to hydrogen. We use hydrogenography, a novel high-throughput optical technique, to map simultaneously all the hydride forming compositions and the kinetics thereof in the gradient thin film. Metallic Mg in the MgxAl1-x layer undergoes a metal-to-semiconductor transition and MgH2 is formed for all Mg fractions x investigated. The presence of an amorphous Mg-Al phase in the thin film phase diagram enhances strongly the kinetics of hydrogenation. In the Al-rich part of the film, a complex H-induced segregation of MgH2 and Al occurs. This uncommon large-scale segregation is evidenced by metal and hydrogen profiling using Rutherford backscattering spectrometry and resonant nuclear analysis based on the reaction 1H(15N,αγ)12C. Besides MgH2, an additional semiconducting phase is found by electrical conductivity measurements around an atomic [Al]/[Mg] ratio of 2 (x=0.33). This suggests that the film is partially transformed into Mg(AlH4)2 at around this composition.

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

DOEpatents

Duchane, D.V.; Barthell, B.L.

1982-04-26

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Composite polymeric film and method for its use in installing a very thin polymeric film in a device

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Nonlinear dynamics of confined thin liquid-vapor bilayer systems with phase change

NASA Astrophysics Data System (ADS)

Kanatani, Kentaro; Oron, Alexander

2011-03-01

We numerically investigate the nonlinear evolution of the interface of a thin liquid-vapor bilayer system confined by rigid horizontal walls from both below and above. The lateral variation of the vapor pressure arising from phase change is taken into account in the present analysis. When the liquid (vapor) is heated (cooled) and gravity acts toward the liquid, the deflection of the interface monotonically grows, leading to a rupture of the vapor layer, whereas nonruptured stationary states are found when the liquid (vapor) is cooled (heated) and gravity acts toward the vapor. In the latter case, vapor-flow-driven convective cells are found in the liquid phase in the stationary state. The average vapor pressure and interface temperature deviate from their equilibrium values once the interface departs from the flat equilibrium state. Thermocapillarity does not have a significant effect near the thermodynamic equilibrium, but becomes important if the system significantly deviates from it.

Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag

2017-03-01

Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm-1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2- valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400 nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106 Ω·cm as the film thickness increased.

Enhancement of Sn-Bi-Ag Solder Joints with ENEPIG Surface Finish for Low-Temperature Interconnection

NASA Astrophysics Data System (ADS)

Pun, Kelvin P. L.; Islam, M. N.; Rotanson, Jason; Cheung, Chee-wah; Chan, Alan H. S.

2018-05-01

Low-temperature soldering constitutes a promising solution in interconnect technology with the increasing trend of heat-sensitive materials in integrated circuit packaging. Experimental work was carried out to investigate the effect of electroless Ni/electroless Pd/immersion gold (ENEPIG) layer thicknesses on Sn-Bi-Ag solder joint integrity during extended reflow at peak temperatures as low as 175°C. Optimizations are proposed to obtain reliable solder joints through analysis of interfacial microstructure with the resulting joint integrity under extended reflow time. A thin Ni(P) layer with thin Pd led to diffusion of Cu onto the interface resulting in Ni3Sn4 intermetallic compound (IMC) spalling with the formation of thin interfacial (Ni,Cu)3Sn4 IMCs which enhance the robustness of the solder after extended reflow, while thick Ni(P) with thin Pd resulted in weakened solder joints with reflow time due to thick interfacial Ni3Sn4 IMCs with the entrapped brittle Bi-phase. With a suitable thin Ni(P), the Pd thickness has to be optimized to prevent excessive Ni-P consumption and early Cu outward diffusion to enhance the solder joint during extended reflow. Based on these findings, suitable Ni(P) and Pd thicknesses of ENEPIG are recommended for the formation of robust low-temperature solder joints.

Surface phase separation, dewetting feature size, and crystal morphology in thin films of polystyrene/poly(ε-caprolactone) blend.

PubMed

Ma, Meng; He, Zhoukun; Li, Yuhan; Chen, Feng; Wang, Ke; Zhang, Qing; Deng, Hua; Fu, Qiang

2012-12-01

Thin films of polystyrene (PS)/poly(ε-caprolactone) (PCL) blends were prepared by spin-coating and characterized by tapping mode force microscopy (AFM). Effects of the relative concentration of PS in polymer solution on the surface phase separation and dewetting feature size of the blend films were systematically studied. Due to the coupling of phase separation, dewetting, and crystallization of the blend films with the evaporation of solvent during spin-coating, different size of PS islands decorated with various PCL crystal structures including spherulite-like, flat-on individual lamellae, and flat-on dendritic crystal were obtained in the blend films by changing the film composition. The average distance of PS islands was shown to increase with the relative concentration of PS in casting solution. For a given ratio of PS/PCL, the feature size of PS appeared to increase linearly with the square of PS concentration while the PCL concentration only determined the crystal morphology of the blend films with no influence on the upper PS domain features. This is explained in terms of vertical phase separation and spinodal dewetting of the PS rich layer from the underlying PCL rich layer, leading to the upper PS dewetting process and the underlying PCL crystalline process to be mutually independent. Copyright © 2012 Elsevier Inc. All rights reserved.

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

DOE PAGES

Jensen, K. M.Ø.; Blichfeld, A. B.; Bauers, S. R.; ...

2015-07-05

By means of normal incidence, high flux and high energy x-rays, we have obtained total scattering data for Pair Distribution Function (PDF) analysis from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. We illustrate the ‘tfPDF’ method through studies of as depositedmore » (i.e. amorphous) and crystalline FeSb 3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb 3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb 3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb 6 octahedra with motifs highly resembling the local structure in crystalline FeSb 3. Analysis of the amorphous structure allows predicting whether the final crystalline product will form the FeSb 3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.« less

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

PubMed Central

Jensen, Kirsten M. Ø.; Blichfeld, Anders B.; Bauers, Sage R.; Wood, Suzannah R.; Dooryhée, Eric; Johnson, David C.; Iversen, Bo B.; Billinge, Simon J. L.

2015-01-01

By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF) analysis have been obtained from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The ‘tfPDF’ method is illustrated through studies of as-deposited (i.e. amorphous) and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films. PMID:26306190

Perturbations in the upper layers of α Centauri A

NASA Astrophysics Data System (ADS)

Brito, A.; Lopes, I.

2016-01-01

The emerging field of asteroseismology allows the direct study of stellar interiors with an incredibly high precision. We used a seismic parameter based on the phase shift as a diagnostic tool to infer the presence of a new layer of rapid variation in the external layers of the primary component of the stellar system Alpha Centauri AB. This layer is, apparently, a thin region where the acoustic modes suffer a strong scattering. Our tests indicate that this layer should be located at an acoustical depth of approximately 1400 s (0.939 R), which corresponds to a depth of 6% below the surface of the star. This is somehow unexpected since the internal structure of this sun-like star is predicted to be similar to the Sun.

Seismic structure of the uppermost mantle beneath the Kenya rift

USGS Publications Warehouse

Keller, Gordon R.; Mechie, J.; Braile, L.W.; Mooney, W.D.; Prodehl, C.

1994-01-01

A major goal of the Kenya Rift International Seismic Project (KRISP) 1990 experiment was the determination of deep lithospheric structure. In the refraction/wide-angle reflection part of the KRISP effort, the experiment was designed to obtain arrivals to distances in excess of 400 km. Phases from interfaces within the mantle were recorded from many shotpoints, and by design, the best data were obtained along the axial profile. Reflected arrivals from two thin (< 10 km), high-velocity layers were observed along this profile and a refracted arrival was observed from the upper high-velocity layer. These mantle phases were observed on record sections from four axial profile shotpoints so overlapping and reversed coverage was obtained. Both high-velocity layers are deepest beneath Lake Turkana and become more shallow southward as the apex of the Kenya dome is approached. The first layer has a velocity of 8.05-8.15 km/s, is at a depth of about 45 km beneath Lake Turkana, and is observed at depths of about 40 km to the south before it disappears near the base of the crust. The deeper layer has velocities ranging from 7.7 to 7.8 km/s in the south to about 8.3 km/s in the north, has a similar dip as the upper one, and is found at depths of 60-65 km. Mantle arrivals outside the rift valley appear to correlate with this layer. The large amounts of extrusive volcanics associated with the rift suggest compositional anomalies as an explanation for the observed velocity structure. However, the effects of the large heat anomaly associated with the rift indicate that composition alone cannot explain the high-velocity layers observed. These layers require some anisotropy probably due to the preferred orientation of olivine crystals. The seismic model is consistent with hot mantle material rising beneath the Kenya dome in the southern Kenya rift and north-dipping shearing along the rift axis near the base of the lithosphere beneath the northern Kenya rift. This implies lithosphere thickening towards the north and is consistent with a thermal thinning of the lithosphere from below in the south changing to thinning of the lithosphere due to stretching in the north. ?? 1994.

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

Thermoelectric Properties and Microstructure of Ca3 Co 4 O 9 thin films on SrTiO3 and Al2 O 3 Substrates

NASA Astrophysics Data System (ADS)

Paulauskas, T.; Qiao, Q.; Gulec, A.; Klie, R. F.; Ozdemir, M.; Boyraz, C.; Mazumdar, D.; Gupta, A.

2011-03-01

Ca 3 Co 4 O9 (CCO), a misfit layered structure exhibiting large Seebeck coefficient at temperatures up to 1000K has attracted increasing attention as a novel high-temperature thermoelectric material. In this work, we investigate CCO thin films grown on SrTi O3 (001) and Al 2 O3 (0001) using pulsed laser deposition. Quality of the thin films was examined using high-resolution transmission electron microscopy and thermoelectric transport measurements. HRTEM images show incommensurate stacks of Cd I2 -type Co O2 layer alternating with rock-salt-type Ca 2 Co O3 layer along the c-axis. Perovskite buffer layer about 10nm thick was found present between CCO and SrTi O3 accompanied by higher density of stacking faults. The CCO grown on Al 2 O3 exhibited numerous misoriented grains and presence of Ca x Co O2 phase. Seebeck coefficient measurements yield an improvement for both samples compared to the bulk value. We suggest that thermoelectric properties of CCO increase due to additional phonon scattering at the stacking faults as well as at the film surfaces/interfaces. This research was supported by the US Army Research Office (W911NF-10-1-0147) and the Sivananthan Undergraduate Research Fellowship.

Imprint control of BaTiO 3 thin films via chemically induced surface polarization pinning

DOE PAGES

Lee, Hyungwoo; Kim, Tae Heon; Patzner, Jacob J.; ...

2016-02-22

Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO 3 (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectricmore » phase in BTO tunnel junctions. Here, we conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications.« less

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhang, X. X.; Wu, Y. Z.; Mu, B.; Qiao, L.; Li, W. X.; Li, J. J.; Wang, P.

2017-03-01

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.

On the Examination of Darcy Permeability a Thin Fibrous Porous Layer

NASA Astrophysics Data System (ADS)

Zhu, Zenghao; Wang, Qiuyun; Wu, Qianhong; Vucbmss Team

2016-11-01

In this paper, we report a novel experimental approach to investigate the Darcy permeability of a soft and thin fibrous porous layer. The project is inspired by recent studies involved compression of very thin porous films and the resultant pore fluid flow inside the confined porous structure. The Darcy permeability plays a critical role during the process, which however, is tricky to measure due to the very thin nature of the porous media. In the current study, a special micro-fluidic device is developed that consists of a rectangular flow channel with adjustable gap height ranging from 20 mm to 0.5 mm. Air is forced through the thin gap filled with testing fibrous materials. By measuring the flow rate and the pressure drop, we have successfully obtained the Darcy permeability of different thin porous sheets at different compression ratios. Furthermore, the surface area of the fibers are evaluated using a Micromeritics® ASAP 2020 (Accelerated Surface Area and Porosimetry) system. We found that, although the functions relating the permeability and porosities are different for different fibrous materials, these functions collapse to a single relationship if one express the permeability as a function of the solid phase surface area per unit volume. This finding provides a useful approach to evaluate the permeability of very thin fibrous porous sheet, which otherwise is difficult to measure directly. This research was supported by the National Science Foundation under Award #1511096.

Bioactivity and cytocompatibility of zirconia (ZrO(2)) films fabricated by cathodic arc deposition.

PubMed

Liu, Xuanyong; Huang, Anping; Ding, Chuanxian; Chu, Paul K

2006-07-01

Zirconium oxide thin films were fabricated on silicon wafers using a filtered cathodic arc system in concert with oxygen plasma. The structure and phase composition of the zirconium oxide thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). The bioactivity was assessed by investigating the formation of apatite on the film surface after soaking in simulated body fluids. Bone marrow mesenchymal stem cells (BMMSC) were used to further evaluate the cytocompatibility of the materials. The results indicate that the films are composed of stoichiometric ZrO(2) and the composition is quite uniform throughout the thickness. Bone-like apatite can be formed on the surface of the ZrO(2) thin film in our SBF immersion experiments, suggesting that the surface is bioactive. The outermost layer of the ZrO(2) thin film comprises nano-sized particles that can be identified by AFM images taken on the thin film surface and TEM micrographs obtained from the interface between the ZrO(2) thin film and apatite layer. The nanostructured surface is believed to be the key factor that apatite is induced to precipitate on the surface. Bone marrow mesenchymal stem cells are observed to grow and proliferate in good states on the film surface. Our results show that ZrO(2) thin films fabricated by cathodic arc deposition exhibit favorable bioactivity and cytocompatibility.

Multi-layered, chemically bonded lithium-ion and lithium/air batteries

DOEpatents

Narula, Chaitanya Kumar; Nanda, Jagjit; Bischoff, Brian L; Bhave, Ramesh R

2014-05-13

Disclosed are multilayer, porous, thin-layered lithium-ion batteries that include an inorganic separator as a thin layer that is chemically bonded to surfaces of positive and negative electrode layers. Thus, in such disclosed lithium-ion batteries, the electrodes and separator are made to form non-discrete (i.e., integral) thin layers. Also disclosed are methods of fabricating integrally connected, thin, multilayer lithium batteries including lithium-ion and lithium/air batteries.

Characterization of Novel Thin-Films and Structures for Integrated Circuit and Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Zhao, Zhao

Thin films have been widely used in various applications. This research focuses on the characterization of novel thin films in the integrated circuits and photovoltaic techniques. The ion implanted layer in silicon can be treated as ion implanted thin film, which plays an essential role in the integrated circuits fabrication. Novel rapid annealing methods, i.e. microwave annealing and laser annealing, are conducted to activate ion dopants and repair the damages, and then are compared with the conventional rapid thermal annealing (RTA). In terms of As+ and P+ implanted Si, the electrical and structural characterization confirms that the microwave and laser annealing can achieve more efficient dopant activation and recrystallization than conventional RTA. The efficient dopant activation in microwave annealing is attributed to ion hopping under microwave field, while the liquid phase growth in laser annealing provides its efficient dopant activation. The characterization of dopants diffusion shows no visible diffusion after microwave annealing, some extent of end range of diffusion after RTA, and significant dopant diffusion after laser annealing. For photovoltaic applications, an indium-free novel three-layer thin-film structure (transparent composited electrode (TCE)) is demonstrated as a promising transparent conductive electrode for solar cells. The characterization of TCE mainly focuses on its optical and electrical properties. Transfer matrix method for optical transmittance calculation is validated and proved to be a desirable method for predicting transmittance of TCE containing continuous metal layer, and can estimate the trend of transmittance as the layer thickness changes. TiO2/Ag/TiO2 (TAgT) electrode for organic solar cells (OSCs) is then designed using numerical simulation and shows much higher Haacke figure of merit than indium tin oxide (ITO). In addition, TAgT based OSC shows better performance than ITO based OSC when compatible hole transfer layer is employed. The electrical and structural characterization of hole transfer layers (HTLs) in OSCs reveals MoO3 is the compatible HTL for TAgT anode. In the end, the reactive ink printed Ag film for solar cell contact application is studied by characterizing its electromigration lifetime. A percolative model is proposed and validated for predicting the resistivity and lifetime of printed Ag thin films containing porous structure.

Synthesis of ZrO 2 thin films by atomic layer deposition: growth kinetics, structural and electrical properties

NASA Astrophysics Data System (ADS)

Cassir, Michel; Goubin, Fabrice; Bernay, Cécile; Vernoux, Philippe; Lincot, Daniel

2002-06-01

Ultra thin films of ZrO 2 were synthesized on soda lime glass and SnO 2-coated glass, using ZrCl 4 and H 2O precursors by atomic layer deposition (ALD), a sequential CVD technique allowing the formation of dense and homogeneous films. The effect of temperature on the film growth kinetics shows a first temperature window for ALD processing between 280 and 350 °C and a second regime or "pseudo-window" between 380 and 400 °C, with a growth speed of about one monolayer per cycle. The structure and morphology of films of less than 1 μm were characterized by XRD and SEM. From 275 °C, the ZrO 2 film is crystallized in a tetragonal form while a mixture of tetragonal and monoclinic phases appears at 375 °C. Impedance spectroscopy measurements confirmed the electrical properties of ZrO 2 and the very low porosity of the deposited layer.

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

PubMed

Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

2016-06-08

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

2017-10-01

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

Generation of gas-phase ions from charged clusters: an important ionization step causing suppression of matrix and analyte ions in matrix-assisted laser desorption/ionization mass spectrometry.

PubMed

Lou, Xianwen; van Dongen, Joost L J; Milroy, Lech-Gustav; Meijer, E W

2016-12-30

Ionization in matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) is a very complicated process. It has been reported that quaternary ammonium salts show extremely strong matrix and analyte suppression effects which cannot satisfactorily be explained by charge transfer reactions. Further investigation of the reasons causing these effects can be useful to improve our understanding of the MALDI process. The dried-droplet and modified thin-layer methods were used as sample preparation methods. In the dried-droplet method, analytes were co-crystallized with matrix, whereas in the modified thin-layer method analytes were deposited on the surface of matrix crystals. Model compounds, tetrabutylammonium iodide ([N(Bu) 4 ]I), cesium iodide (CsI), trihexylamine (THA) and polyethylene glycol 600 (PEG 600), were selected as the test analytes given their ability to generate exclusively pre-formed ions, protonated ions and metal ion adducts respectively in MALDI. The strong matrix suppression effect (MSE) observed using the dried-droplet method might disappear using the modified thin-layer method, which suggests that the incorporation of analytes in matrix crystals contributes to the MSE. By depositing analytes on the matrix surface instead of incorporating in the matrix crystals, the competition for evaporation/ionization from charged matrix/analyte clusters could be weakened resulting in reduced MSE. Further supporting evidence for this inference was found by studying the analyte suppression effect using the same two sample deposition methods. By comparing differences between the mass spectra obtained via the two sample preparation methods, we present evidence suggesting that the generation of gas-phase ions from charged matrix/analyte clusters may induce significant suppression of matrix and analyte ions. The results suggest that the generation of gas-phase ions from charged matrix/analyte clusters is an important ionization step in MALDI-MS. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Christopher

2011-08-11

We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film farmore » below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the relative crystalline orientation between the filmand the substrate. For 4 uc or greater, the perovskite epitaxial template is lost and the LAO filmis amorphous. These results suggest that metastable interlayers can be used for strain release on the nanometer scale.« less

Influence of oxygen on the carbide formation on tungsten

NASA Astrophysics Data System (ADS)

Luthin, J.; Linsmeier, Ch.

2001-03-01

As a first wall material in nuclear fusion devices, tungsten will interact with carbon and oxygen from the plasma. In this study, we report on the process of thermally induced carbide formation of thin carbon films on polycrystalline tungsten and the influence of oxygen on this process. All investigations are performed using X-ray photoelectron spectroscopy (XPS). Carbon films are supplied through electron beam evaporation of graphite. The carbidization process, monitored during increased substrate temperature, can be divided into four phases. In phase I disordered carbon converts into graphite-like carbon. In phase II significant diffusion and the reaction to W 2C is observed, followed by phase III which is dominated by the presence of W 2C and the beginning reaction to WC. Finally in phase IV only WC is present, but the total carbon amount has strongly decreased. Different mechanisms of oxygen influence on the carbide formation are proposed and measurements of the reaction of carbon on tungsten with intermediate oxide layers are presented in detail. A WO 2+ x intermediate layer completely inhibits the carbide formation, while a WO 2 layer leads to WC formation at temperatures above 1270 K.

Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

PubMed Central

2013-01-01

Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshmukh, S. G., E-mail: deshmukhpradyumn@gmail.com; Jariwala, Akshay; Agarwal, Anubha

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl{sub 2} and Na{sub 2}S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grainmore » size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm{sup −1} and 1094 cm{sup −1}. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.« less

Effect of annealing time on optical and electrical properties of CdS thin films

NASA Astrophysics Data System (ADS)

Soliya, Vanshika; Tandel, Digisha; Patel, Chandani; Patel, Kinjal

2018-05-01

Cadmium sulphide (CdS) is semiconductor compound of II-VI group. Thin film of CdS widely used in the applications such as, a buffer layer in copper indium diselenide (CIS) hetrojunction based solar cells, transistors, photo detectors and light emitting diodes. Because of the ease of making like chemical bath deposition (CBD), screen printing and thermal evaporation. It is extensively used in the CIS based solar cells as a buffer layers. The buffer layers usually used for reducing the interface recombination of the photo generated carriers by means of improving the lattice mismatch between the layers. The optimum thickness and the optoelectronics properties of CdS thin films like, optical band gap, electrical resistivity, structure, and composition etc., are to be considering for its use as a buffer layer. In the present study the CdS thin film were grown by simple dip coating method. In this method we had prepared 0.1M Cadmium-thiourea precursor solution. Before the deposition process of CdS, glass substrate has been cleaned using Methanol, Acetone, Trichloroethylene and De-ionized (DI) water. After coating of precursor layer, it was heated at 200 °C for themolysis. Then after CdS films were annealed at 200 °C for different time and studied its influence on the optical transmission, band gap, XRD, raman and the electrical resistivity. As increasing the annealing time we had observed the average transmission of the films was reduce after the absorption edge. In addition to the blue shift of absorption edge was observed. The observed optimum band gap was around 2.50 eV. XRD and raman analysis confirms the cubuc phase of CdS. Hot probe method confirms the n-type conductivity of the CdS film. Hall probe data shows the resistivity of the films was in the order of 103 Ωcm. Observed data signifies its future use in the many optoelectronics devices.

Immobilized humic substances and immobilized aggregates of humic substances as sorbent for solid phase extraction.

PubMed

Erny, Guillaume L; Gonçalves, Bruna M; Esteves, Valdemar I

2013-09-06

In this work, humic substances (HS) immobilized, as a thin layer or as aggregates, on silica gel were tested as material for solid phase extraction. Some triazines (simazine, atrazine, therbutylazine, atrazine-desethyl-desisopropyl-2-hydroxy, ametryn and terbutryn), have been selected as test analytes due to their environmental importance and to span a large range of solubility and octanol/water partition coefficient (logP). The sorbent was obtained immobilizing a thin layer of HS via physisorption on a pre-coated silica gel with a cationic polymer (polybrene). While the sorbent could be used as it is, it was demonstrated that additional HS could be immobilized, via weak interactions, to form stable humic aggregates. However, while a higher quantity of HS could be immobilized, no significant differences were observed in the sorption parameters. This sorbent have been tested for solid phase extraction to concentrate triazines from aqueous matrixes. The sorbent demonstrated performances equivalent to commercial alternatives as a concentration factor between 50 and 200, depending on the type of triazines, was obtained. Moreover the low cost and the high flow rate of sample through the column allowed using high quantity of sorbent. The analytical procedure was tested with different matrixes including tap water, river water and estuarine water. Copyright © 2013 Elsevier B.V. All rights reserved.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Ultra-thin multilayer capacitors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Renk, Timothy Jerome; Monson, Todd C.

2009-06-01

The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report detailsmore » some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation.« less

Comparison Between Navier-Stokes and Thin-Layer Computations for Separated Supersonic Flow

NASA Technical Reports Server (NTRS)

Degani, David; Steger, Joseph L.

1983-01-01

In the numerical simulation of high Reynolds-number flow, one can frequently supply only enough grid points to resolve the viscous terms in a thin layer. As a consequence, a body-or stream-aligned coordinate system is frequently used and viscous terms in this direction are discarded. It is argued that these terms cannot be resolved and computational efficiency is gained by their neglect. Dropping the streamwise viscous terms in this manner has been termed the thin-layer approximation. The thin-layer concept is an old one, and similar viscous terms are dropped, for example, in parabolized Navier-Stokes schemes. However, such schemes also make additional assumptions so that the equations can be marched in space, and such a restriction is not usually imposed on a thin-layer model. The thin-layer approximation can be justified in much the same way as the boundary-layer approximation; it requires, therefore, a body-or stream-aligned coordinate and a high Reynolds number. Unlike the boundary-layer approximation, the same equations are used throughout, so there is no matching problem. Furthermore, the normal momentum equation is not simplified and the convection terms are not one-sided differenced for marching. Consequently, the thin-layer equations are numerically well behaved at separation and require no special treatment there. Nevertheless, the thin-layer approximation receives criticism. It has been suggested that the approximation is invalid at separation and, more recently, that it is inadequate for unsteady transonic flow. Although previous comparisons between the thin-layer and Navier-Stokes equations have been made, these comparisons have not been adequately documented.

Multilayer composites and manufacture of same

DOEpatents

Holesinger, Terry G.; Jia, Quanxi

2006-02-07

The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

Electrical and structural characterization of IZO (indium oxide-zinc oxide) thin films for device applications

NASA Astrophysics Data System (ADS)

Yaglioglu, Burag

Materials for oxide-based transparent electronics have been recently reported in the literature. These materials include various amorphous and crystalline compounds based on multi-component oxides and many of them offer useful combinations of transparency, controllable carrier concentrations, and reasonable n-carrier mobility. In this thesis, the properties of amorphous and crystalline In2O3-10wt%ZnO, IZO, thin films were investigated for their potential use in oxide electronics. The room temperature deposition of this material using DC magnetron sputtering results in the formation of amorphous films. Annealing amorphous IZO films at 500°C in air produces a previously unknown crystalline compound. Using electron diffraction experiments, it is reported that the crystal structure of this compound is based on the high-pressure rhombohedral phase of In2O3. Electrical properties of different phases of IZO were explored and it was concluded that amorphous films offer most promising characteristics for device applications. Therefore, thin film transistors (TFT) were fabricated based on amorphous IZO films where both the channel and metallization layers were deposited from the same target. The carrier densities in the channel and source-drain layers were adjusted by changing the oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with high saturation mobilities.

The determination and quantification of photosynthetic pigments by reverse phase high-performance liquid chromatography, thin-layer chromatography, and spectrophotometry.

PubMed

Pocock, Tessa; Król, Marianna; Huner, Norman P A

2004-01-01

Chorophylls and carotenoids are functionally important pigment molecules in photosynthetic organisms. Methods for the determination of chlorophylls a and b, beta-carotene, neoxanthin, and the pigments that are involved in photoprotective cycles such as the xanthophylls are discussed. These cycles involve the reversible de-epoxidation of violaxanthin into antheraxanthin and zeaxanthin, as well as the reversible de-epoxidation of lutein-5,6-epoxide into lutein. This chapter describes pigment extraction procedures from higher plants and green algae. Methods for the determination and quantification using high-performance liquid chromatograpy (HPLC) are described as well as methods for the separation and purification of pigments for use as standards using thin-layer chromatography (TLC). In addition, several spectrophotometric methods for the quantification of chlorophylls a and b are described.

High performance thin layer chromatography fingerprint analysis of guava (Psidium guajava) leaves

NASA Astrophysics Data System (ADS)

Astuti, M.; Darusman, L. K.; Rafi, M.

2017-05-01

High-performance thin layer chromatography (HPTLC) fingerprint analysis is commonly used for quality control of medicinal plants in term of identification and authentication. In this study, we have been developed HPTLC fingerprint analysis for identification of guava (Psidium guajava) leaves raw material. A mixture of chloroform, acetone, and formic acid in the ratio 10:2:1 was used as the optimum mobile phase in HPTLC silica plate and with 13 bands were detected. As reference marker we chose gallic acid (Rf = 0.21) and catechin (Rf = 0.11). The two compound were detected as pale black bands at 366 nm after derivatization with sulfuric acid 10% v/v (in methanol) reagent. Validation of the method was met within validation criteria, so the developed method could be used for quality control of guava leaves.

Spinodal decomposition in amorphous metal-silicate thin films: Phase diagram analysis and interface effects on kinetics

NASA Astrophysics Data System (ADS)

Kim, H.; McIntyre, P. C.

2002-11-01

Among several metal silicate candidates for high permittivity gate dielectric applications, the mixing thermodynamics of the ZrO2-SiO2 system were analyzed, based on previously published experimental phase diagrams. The driving force for spinodal decomposition was investigated in an amorphous silicate that was treated as a supercooled liquid solution. A subregular model was used for the excess free energy of mixing of the liquid, and measured invariant points were adopted for the calculations. The resulting simulated ZrO2-SiO2 phase diagram matched the experimental results reasonably well and indicated that a driving force exists for amorphous Zr-silicate compositions between approx40 mol % and approx90 mol % SiO2 to decompose into a ZrO2-rich phase (approx20 mol % SiO2) and SiO2-rich phase (>98 mol % SiO2) through diffusional phase separation at a temperature of 900 degC. These predictions are consistent with recent experimental reports of phase separation in amorphous Zr-silicate thin films. Other metal-silicate systems were also investigated and composition ranges for phase separation in amorphous Hf, La, and Y silicates were identified from the published bulk phase diagrams. The kinetics of one-dimensional spinodal decomposition normal to the plane of the film were simulated for an initially homogeneous Zr-silicate dielectric layer. We examined the effects that local stresses and the capillary driving force for component segregation to the interface have on the rate of spinodal decomposition in amorphous metal-silicate thin films.

Interference Thin Films for Spectral Filtering, Polarizing, Phase Retarding, and Intensity Splitting of FUV Radiation.

NASA Astrophysics Data System (ADS)

Kim, Jongmin

The development of thin film technology for the far ultraviolet (FUV: 120~220 nm) has not progressed as rapidly as in the visible and infrared regions because substrate and thin film materials exhibit absorption characteristics that complicate the design process. Mathematically, these absorbing materials can be treated in the same manner as non-absorbing materials if a complex representation of the optical constants is used. Realization of higher throughput can be achieved by operating in a reflective rather than a transmissive mode. The spectral filter II -stack design method obtains a high reflectance by minimizing absorptance in the high refractive index layer while maintaining the constructive interference between reflected waves at the boundary of HL pairs. Reflective polarizers are designed by inducing transmission and absorption of the p-polarized light. Utilizing a MgF_2/Al/MgF _2 three layer structure on a thick Al layer as a substrate, high s-polarization reflectance (>88%) and a high degree of polarization (>99%) are obtained. Out-of-band rejection in the spectral filter and the degree of polarization in the polarizer are significantly improved by combining multiple reflectors in tandem. The high-low absorbing material boundaries in the MgF_2/Al/MgF_2 structure are also useful for obtaining phase retardance between s and p-polarized reflected fields. Two equations established by the ideal quarterwave retarder (QWR) requirement and electric field relations are used to determine the MgF_2 layer thicknesses to achieve excellent QWR performances. Calculated results show that a high reflectance for both polarizations (>80%) and almost 90^circ of phase retardance are possible. Discrepancies between the designed and measured polarizer performance are mainly caused by Al layer oxidation during fabrication in a conventional high vacuum chamber. XPS depth profiling is used to analyze the oxidation and the results show that oxidized layer thicknesses are greater than typically reported from optical techniques. A method is established to predict the maximum oxygen concentration at each Al interface based only on the pressure to rate ratio during film deposition. Along with polarizers and retarders, beam-splitters are also difficult to make due to absorption; and transparent conductive coatings have not been studied in the FUV region. A beam-splitter with improved TR product (transmittance times reflectance: TR = 0.20, 0.18) is designed with a dielectric multilayer. It is found that Cr is a significantly better film material for transparent conductive coatings than indium-tin-oxide (ITO) in the FUV region.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Piezoelectric Non-Linear Nanomechanical Temperature and Acceleration Insensitive Clocks (PENNTAC) Phase 1 Evaluation and Plans for Phase 2

DTIC Science & Technology

2013-05-01

95.2 dBc/Hz, (c) - 94.2 dBc/Hz. Fig. 4: Mechanically compensated AlN resonators. A thin oxide layer is used to completely cancel the linear...pumped is represented by a non-linear capacitor. This capacitor will be first implemented via a varactor and then substituted by a purely mechanical...demonstrate the advantages of a parametric oscillator: (i) we will first use an external electronic varactor to prove that a parametric oscillator

Thick film magnetic nanoparticulate composites and method of manufacture thereof

NASA Technical Reports Server (NTRS)

Ge, Shihui (Inventor); Yan, Dajing (Inventor); Xiao, Danny T. (Inventor); Ma, Xinqing (Inventor); Zhang, Yide (Inventor); Zhang, Zongtao (Inventor)

2009-01-01

Thick film magnetic/insulating nanocomposite materials, with significantly reduced core loss, and their manufacture are described. The insulator coated magnetic nanocomposite comprises one or more magnetic components, and an insulating component. The magnetic component comprises nanometer scale particles (about 1 to about 100 nanometers) coated by a thin-layered insulating phase. While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase provides the desired soft magnetic properties, the insulating material provides high resistivity, which reduces eddy current loss.

Reversible adapting layer produces robust single-crystal electrocatalyst for oxygen evolution.

PubMed

Tung, Ching-Wei; Hsu, Ying-Ya; Shen, Yen-Ping; Zheng, Yixin; Chan, Ting-Shan; Sheu, Hwo-Shuenn; Cheng, Yuan-Chung; Chen, Hao Ming

2015-08-28

Electrochemically converting water into oxygen/hydrogen gas is ideal for high-density renewable energy storage in which robust electrocatalysts for efficient oxygen evolution play crucial roles. To date, however, electrocatalysts with long-term stability have remained elusive. Here we report that single-crystal Co3O4 nanocube underlay with a thin CoO layer results in a high-performance and high-stability electrocatalyst in oxygen evolution reaction. An in situ X-ray diffraction method is developed to observe a strong correlation between the initialization of the oxygen evolution and the formation of active metal oxyhydroxide phase. The lattice of skin layer adapts to the structure of the active phase, which enables a reversible facile structural change that facilitates the chemical reactions without breaking the scaffold of the electrocatalysts. The single-crystal nanocube electrode exhibits stable, continuous oxygen evolution for >1,000 h. This robust stability is attributed to the complementary nature of defect-free single-crystal electrocatalyst and the reversible adapting layer.

Processing and mechanical characterization of alumina laminates

NASA Astrophysics Data System (ADS)

Montgomery, John K.

2002-08-01

Single-phase ceramics that combine property gradients or steps in monolithic bodies are sought as alternatives to ceramic composites made of dissimilar materials. This work describes novel processing methods to produce stepped-density (or laminated) alumina single-phase bodies that maintain their mechanical integrity. One arrangement consists of a stiff, dense bulk material with a thin, flaw tolerant, porous exterior layer. Another configuration consists of a lightweight, low-density bulk material with a thin, hard, wear resistant exterior layer. Alumina laminates with strong interfaces have been successfully produced in this work using two different direct-casting processes. Gelcasting is a useful near-net shape processing technique that has been combined with several techniques, such as reaction bonding of aluminum oxide and the use of starch as a fugative filler, to successfully produced stepped-density alumina laminates. The other direct casting process that has been developed in this work is thermoreversible gelcasting (TRG). This is a reversible gelation process that has been used to produce near-net shape dense ceramic bodies. Also, individual layers can be stacked together and heated to produce laminates. Bilayer laminate samples were produced with varied thickness of porous and dense layers. It was shown that due to the difference in modulus and hardness, transverse cracking is found upon Hertzian contact when the dense layer is on the exterior. In the opposite arrangement, compacted damage zones formed in the porous material and no damage occurred in the underlying dense layer. Flaw tolerant behavior of the porous exterior/dense underlayer was examined by measuring biaxial strength as a function of Vickers indentation load. It was found that the thinnest layer of porous material results in the greatest flaw tolerance. Also, higher strength was exhibited at large indentation loads when compared to dense monoliths. The calculated stresses on the surfaces and interface afforded an explanation of the behavior that failure initiates at the interface between the layers for the thinnest configuration, rather than the sample surface.

Self-Organized Superlattice and Phase Coexistence inside Thin Film Organometal Halide Perovskite.

PubMed

Kim, Tae Woong; Uchida, Satoshi; Matsushita, Tomonori; Cojocaru, Ludmila; Jono, Ryota; Kimura, Kohei; Matsubara, Daiki; Shirai, Manabu; Ito, Katsuji; Matsumoto, Hiroaki; Kondo, Takashi; Segawa, Hiroshi

2018-02-01

Organometal halide perovskites have attracted widespread attention as the most favorable prospective material for photovoltaic technology because of their high photoinduced charge separation and carrier transport performance. However, the microstructural aspects within the organometal halide perovskite are still unknown, even though it belongs to a crystal system. Here direct observation of the microstructure of the thin film organometal halide perovskite using transmission electron microscopy is reported. Unlike previous reports claiming each phase of the organometal halide perovskite solely exists at a given temperature range, it is identified that the tetragonal and cubic phases coexist at room temperature, and it is confirmed that superlattices composed of a mixture of tetragonal and cubic phases are self-organized without a compositional change. The organometal halide perovskite self-adjusts the configuration of phases and automatically organizes a buffer layer at boundaries by introducing a superlattice. This report shows the fundamental crystallographic information for the organometal halide perovskite and demonstrates new possibilities as promising materials for various applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High quality nitrogen-doped zinc oxide thin films grown on ITO by sol-gel method

NASA Astrophysics Data System (ADS)

Pathak, Trilok Kumar; Kumar, Vinod; Purohit, L. P.

2015-11-01

Highly transparent N-doped ZnO thin films were deposited on ITO coated corning glass substrate by sol-gel method. Ammonium nitrate was used as a dopant source of N with varying the doping concentration 0, 0.5, 1.0, 2.0 and 3.0 at%. The DSC analysis of prepared NZO sols is observed a phase transition at 150 °C. X-ray diffraction pattern showed the preferred (002) peak of ZnO, which was deteriorated with increased N concentrations. The transmittance of NZO thin films was observed to be ~88%. The bandgap of NZO thin films increased from 3.28 to 3.70 eV with increased N concentration from 0 to 3 at%. The maximum carrier concentration 8.36×1017 cm-3 and minimum resistivity 1.64 Ω cm was observed for 3 at% N doped ZnO thin films deposited on glass substrate. These highly transparent ZnO thin films can be used as a window layer in solar cells and optoelectronic devices.

A generalized theory of thin film growth

NASA Astrophysics Data System (ADS)

Du, Feng; Huang, Hanchen

2018-03-01

This paper reports a theory of thin film growth that is generalized for arbitrary incidence angle during physical vapor deposition in two dimensions. The accompanying kinetic Monte Carlo simulations serve as verification. A special theory already exists for thin film growth with zero incidence angle, and another theory also exists for nanorod growth with a glancing angle. The theory in this report serves as a bridge to describe the transition from thin film growth to nanorod growth. In particular, this theory gives two critical conditions in analytical form of critical coverage, ΘI and ΘII. The first critical condition defines the onset when crystal growth or step dynamics stops following the wedding cake model for thin film growth. The second critical condition defines the onset when multiple-layer surface steps form to enable nanorod growth. Further, this theory also reveals a critical incidence angle, below which nanorod growth is impossible. The critical coverages, together with the critical incidence angle, defines a phase diagram of thin growth versus nanorod growth.

Cadmium sulfide solar cells

NASA Technical Reports Server (NTRS)

Stanley, A. G.

1975-01-01

Development, fabrication and applications of CdS solar cells are reviewed in detail. The suitability of CdS cells for large solar panels and microcircuitry, and their low cost, are emphasized. Developments are reviewed by manufacturer-developer. Vapor phase deposition of thin-film solar cells, doping and co-evaporation, sputtering, chemical spray, and sintered layers are reviewed, in addition to spray deposition, monograin layer structures, and silk screening. Formation of junctions by electroplating, evaporation, brushing, CuCl dip, and chemiplating are discussed, along with counterelectrode fabrication, VPD film structures, the Cu2S barrier layer, and various photovoltaic effects (contact photovoltage, light intensity variation, optical enhancement), and various other CdS topics.

Transformers: Shape-Changing Space Systems Built with Robotic Textiles

NASA Technical Reports Server (NTRS)

Stoica, Adrian

2013-01-01

Prior approaches to transformer-like robots had only very limited success. They suffer from lack of reliability, ability to integrate large surfaces, and very modest change in overall shape. Robots can now be built from two-dimensional (2D) layers of robotic fabric. These transformers, a new kind of robotic space system, are dramatically different from current systems in at least two ways. First, the entire transformer is built from a single, thin sheet; a flexible layer of a robotic fabric (ro-fabric); or robotic textile (ro-textile). Second, the ro-textile layer is foldable to small volume and self-unfolding to adapt shape and function to mission phases.

The influence of different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Wang, J.; Zhu, J.; He, Y. X.

2014-01-01

The influence of two different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 (CIGS) thin films was investigated. All the precursors contained cauliflower-like nodules, whereas smaller subnodules were observed on the background. All the precursors revealed apparent three-layered structures, and voids were observed at the CIGS/SLG interface of Sets 1 and 2 films rather than Set 3 film. EDS results indicated that all CIGS thin films were Cu-deficient. Based on the grazing incidence X-ray diffraction (GIXRD) patterns, as-selenized films showed peaks corresponding to the chalcopyrite-type CIGS structure. Depth-resolved Raman spectra showed the formation of a dominant CIGS phase inside the films for all the as-selenized samples investigated, and of an ordered vacancy compound (OVC) phase like Cu(In,Ga)3Se5 or Cu(In,Ga)2Se3.5 at the surface and/or CIGS/SLG interface region of Sets 2 and 3 films. No evidence was obtained on the presence of an OVC phase in Set 1 CIGS film, which may be speculated that long-time annealing is contributed to suppress the growth of OVC phases. The results of the present work suggest that the metallic precursors deposited with the upright-location sputter gun might be more appropriate to prepare CIGS thin films than those sputtered with the titled-location gun.

An Electrochemical Experiment Using an Optically Transparent Thin Layer Electrode

ERIC Educational Resources Information Center

DeAngelis, Thomas P.; Heineman, William R.

1976-01-01

Describes a unified experiment in which an optically transparent thin layer electrode is used to illustrate the techniques of thin layer electrochemistry, cyclic voltammetry, controlled potential coulometry, and spectroelectrochemistry. (MLH)

Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Floating liquid phase in sedimenting colloid-polymer mixtures.

PubMed

Schmidt, Matthias; Dijkstra, Marjolein; Hansen, Jean-Pierre

2004-08-20

Density functional theory and computer simulation are used to investigate sedimentation equilibria of colloid-polymer mixtures within the Asakura-Oosawa-Vrij model of hard sphere colloids and ideal polymers. When the ratio of buoyant masses of the two species is comparable to the ratio of differences in density of the coexisting bulk (colloid) gas and liquid phases, a stable "floating liquid" phase is found, i.e., a thin layer of liquid sandwiched between upper and lower gas phases. The full phase diagram of the mixture under gravity shows coexistence of this floating liquid phase with a single gas phase or a phase involving liquid-gas equilibrium; the phase coexistence lines meet at a triple point. This scenario remains valid for general asymmetric binary mixtures undergoing bulk phase separation.

Defect-free ultrahigh flux asymmetric membranes

DOEpatents

Pinnau, Ingo; Koros, William J.

1990-01-01

Defect-free, ultrahigh flux integrally-skinned asymmetric membranes having extremely thin surface layers (<0.2 .mu.m) comprised of glassy polymers are disclosed. The membranes are formed by casting an appropriate drope followed by forced convective evaporation of solvent to obtain a dry phase separated asymmetrical structure. The structure is then washed in a precipitation liquid and dried.

Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent

NASA Astrophysics Data System (ADS)

Nakamura, Hiroshi; Aoki, Masaharu

1981-01-01

Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700-800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (˜1 μm) and smooth, had low, uniform Te concentrations (˜0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10-30 μm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS1-xSex were also grown on ZnS substrates.

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

PubMed

Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

2015-04-20

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

PubMed Central

Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

2015-01-01

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Collis, Ward J.; Abul-Fadl, Ali; Iyer, Shanthi

1988-01-01

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

TiOx thin films grown on Pd(100) and Pd(111) by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Farstad, M. H.; Ragazzon, D.; Grönbeck, H.; Strømsheim, M. D.; Stavrakas, C.; Gustafson, J.; Sandell, A.; Borg, A.

2016-07-01

The growth of ultrathin TiOx (0≤x≤2) films on Pd(100) and Pd(111) surfaces by chemical vapor deposition (CVD), using Titanium(IV)isopropoxide (TTIP) as precursor, has been investigated by high resolution photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Three different TiOx phases and one Pd-Ti alloy phase have been identified for both surfaces. The Pd-Ti alloy phase is observed at the initial stages of film growth. Density functional theory (DFT) calculations for Pd(100) and Pd(111) suggest that Ti is alloyed into the second layer of the substrate. Increasing the TTIP dose yields a wetting layer comprising Ti2 + species (TiOx, x ∼0.75). On Pd(100), this phase exhibits a mixture of structures with (3 × 5) and (4 × 5) periodicity with respect to the Pd(100) substrate, while an incommensurate structure is formed on Pd(111). Most importantly, on both surfaces this phase consists of a zigzag pattern similar to observations on other reactive metal surfaces. Further increase in coverage results in growth of a fully oxidized (TiO2) phase on top of the partially oxidized layer. Preliminary investigations indicate that the fully oxidized phase on both Pd(100) and Pd(111) may be the TiO2(B) phase.

Strain-induced nanostructure of Pb(Mg1/3Nb2/3)O3-PbTiO3 on SrTiO3 epitaxial thin films with low PbTiO3 concentration

NASA Astrophysics Data System (ADS)

Kiguchi, Takanori; Fan, Cangyu; Shiraishi, Takahisa; Konno, Toyohiko J.

2017-10-01

The singularity of the structure in (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) (x = 0-50 mol %) epitaxial thin films of 100 nm thickness was investigated from the viewpoint of the localized residual strain in the nanoscale. The films were deposited on SrTiO3 (STO) (001) single-crystal substrates by chemical solution deposition (CSD) using metallo-organic decomposition (MOD) solutions. X-ray and electron diffraction patterns revealed that PMN-xPT thin films included a single phase of the perovskite-type structure with the cube-on-cube orientation relationship between PMN-xPT and STO: (001)Film ∥ (001)Sub, [100]Film ∥ [100]Sub. X-ray reciprocal space maps showed an in-plane tensile strain in all the compositional ranges considered. Unit cells in the films were strained from the rhombohedral (pseudocubic) (R) phase to a lower symmetry crystal system, the monoclinic (MB) phase. The morphotropic phase boundary (MPB) that split the R and tetragonal (T) phases was observed at x = 30-35 for bulk crystals of PMN-xPT, whereas the strain suppressed the transformation from the R phase to the T phase in the films up to x = 50. High-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) analysis and its related local strain analysis revealed that all of the films have a bilayer morphology. The nanoscale strained layer formed only above the film/substrate semi-coherent interface. The misfit dislocations generated the localized and periodic strain fields deformed the unit cells between the dislocation cores from the R to an another type of the monoclinic (MA) phase. Thus, the singular and localized residual strains in the PMN-xPT/STO (001) epitaxial thin films affect the phase stability around the MPB composition and result in the MPB shift phenomena.

The Interface Structure of FeSe Thin Film on CaF2 Substrate and its Influence on the Superconducting Performance.

PubMed

Qiu, Wenbin; Ma, Zongqing; Patel, Dipak; Sang, Lina; Cai, Chuanbing; Shahriar Al Hossain, Mohammed; Cheng, Zhenxiang; Wang, Xiaolin; Dou, Shi Xue

2017-10-25

The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF 2 ) (100) substrates and glean the detailed information from the FeSe/CaF 2 interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF 2 in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T c ) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T c onset /T c zero as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF 2 interfaces are also proposed for further enhancing the superconducting performance in this system.

Combined urea-thin layer chromatography and silver nitrate-thin layer chromatography for micro separation and determination of hard-to-detect branched chain fatty acids in natural lipids.

PubMed

Yan, Yuanyuan; Wang, Xingguo; Liu, Yijun; Xiang, Jingying; Wang, Xiaosan; Zhang, Huijun; Yao, Yunping; Liu, Ruijie; Zou, Xiaoqiang; Huang, Jianhua; Jin, Qingzhe

2015-12-18

A simple, fast and efficient procedure was developed for micro separation and enrichment of branched chain fatty acids (BCFA) from natural products using successive thin layer chromatography (TLC) technique coupling novel urea-TLC with AgNO3-TLC, which rely on the formation of urea adduction and AgNO3 bonding in methanol. These natural lipids contain a significant amount of straight chain fatty acids (FA). Fresh and fast urea-TLC and AgNO3-TLC plate making techniques were developed with more even coating and less coating material contamination before being utilized for separation. Goat milk fat was used as a model. Various experimental parameters that affect urea-TLC and AgNO3-TLC separation of BCFA were investigated and optimized, including coating of urea, concentration of original oil sample, mobile phase and sample application format. High efficiency of removal of straight chain FA was achieved with a low amount of sample in an easy and fast way. A total BCFA mix with much higher purity than previous studies was successfully achieved. The developed method has also been applied for the concentration and analysis of BCFA in cow milk fat and Anchovy oil. Copyright © 2015 Elsevier B.V. All rights reserved.

HPTLC detection of altitudinal variation of the potential antivenin stigmasterol in different populations of the tropical ethnic antidote Rauvolfia serpentina.

PubMed

Dey, Abhijit; Pandey, Devendra Kumar

2014-09-01

To determine the altitudinal variation of stigmasterol, a potential antivenin, in roots from seven populations of Rauvolfia serpentina (L). Benth. ex Kurz. (Apocynaceae) (R. serpentina), an important herb found in Indian subcontinent which has long been used in the treatment of snakebite, blood pressure and schizophrenia. Altitudinal variation of stigmasterol content in R. serpentina roots was analyzed by high performance thin layer chromatography. Chromatography was performed on silica gel 60 F254 thin layer chromatography plates with benzene-acetone 86:14 (v/v) as mobile phase. Densitometric analysis was done at λ=366 nm after derivatization with vanillin-10% (v/v) sulphuric acid alcohol reagent. The method was validated for precision and recovery. The present experiment demonstrates a simple, rapid, precise and sensitive high performance thin layer chromatography protocol for qualitative and quantitative determination of stigmasterol from different populations of R. serpentina. Results demonstrated that in root samples stigmasterol was present at Rf value of 0.44. This investigation demonstrates that stigmasterol content in R. serpentina roots varies in different altitudes. Popular ethnomedicinal use of this herb against snakebite may be contributed by the occurrence of stigmasterol in its roots. Copyright © 2014 Hainan Medical College. Published by Elsevier B.V. All rights reserved.

Role of indium tin oxide electrode on the microstructure of self-assembled WO3-BiVO4 hetero nanostructures

NASA Astrophysics Data System (ADS)

Song, Haili; Li, Chao; Van, Chien Nguyen; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

2017-11-01

Self-assembled WO3-BiVO4 nanostructured thin films were grown on a (001) yttrium stabilized zirconia (YSZ) substrate by the pulsed laser deposition method with and without the indium tin oxide (ITO) bottom electrode. Their microstructures including surface morphologies, crystalline phases, epitaxial relationships, interface structures, and composition distributions were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray energy dispersive spectroscopy. In both samples, WO3 formed nanopillars embedded into the monoclinic BiVO4 matrix with specific orientation relationships. In the sample with the ITO bottom electrode, an atomically sharp BiVO4/ITO interface was formed and the orthorhombic WO3 nanopillars were grown on a relaxed BiVO4 buffer layer with a mixed orthorhombic and hexagonal WO3 transition layer. In contrast, a thin amorphous layer appears at the interfaces between the thin film and the YSZ substrate in the sample without the ITO electrode. In addition, orthorhombic Bi2WO6 lamellar nanopillars were formed between WO3 and BiVO4 due to interdiffusion. Such a WO3-Bi2WO6-BiVO4 double heterojunction photoanode may promote the photo-generated charge separation and further improve the photoelectrochemical water splitting properties.

Enhanced electrical properties in bilayered ferroelectric thin films

NASA Astrophysics Data System (ADS)

Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie

2013-03-01

Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, S.; Ma, B.; Narayanan, M.

2012-01-01

Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 xmore » 10{sup -9} A cm{sup -2} and 3.3 x 10{sup -6} A cm{sup -2} with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (7 0 0) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Chan-Shan; Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720; Tang, Tsung-Ta

Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

Lipophilicity of a series of 1,2-benzisothiazol-3(2H)-ones determined by reversed-phase thin-layer chromatography.

PubMed

Sławik, Tomasz; Kowalski, Cezary

2002-04-05

The lipophilicity (R(Mo)) and specific hydrophobic surface area of seven 1,2-benzisothiazol-3(2H)-ones have been determined by reversed-phase TLC and the effect of different mobile-phase modifiers (acetone, acetonitrile, methanol) on the retention has been studied. The linear correlations between the volume fraction of the organic solvent and the R(M) values over a limited range were established for each solute with high values of correlation coefficients (>0.99). The influence of solvent pH on R(M) values was investigated.

Formation, Phase, and Elemental Composition of Micro- and Nano-Dimensional Particles of the Fe-Ti System

NASA Astrophysics Data System (ADS)

Dresvyannikov, A. F.; Kolpakov, M. E.

2018-05-01

X-ray fluorescence, X-ray phase analysis, and transmission Mössbauer and NGR spectrometry are used to study the formation, phase, and elemental composition of Fe-Ti particles. The interaction between Fe(III) ions and dispersed titanium in an aqueous solution containing chloride ions and HF is studied. It is shown that the resulting Fe-Ti samples are a set of core-shell microparticles with titanium cores coated with micro- and nanosized α-Fe nucleation centers with the thinness outer layer of iron(III) oxide characterized by a developed surface.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Electrodeposition of near stoichiometric CuInSe2 thin films for photovoltaic applications

NASA Astrophysics Data System (ADS)

Chandran, Ramkumar; Mallik, Archana

2018-03-01

This work investigates on the single step electrodeposition of quality CuInSe2 (CIS) thin film absorber layer for photovoltaics applications. The electrodeposition was carried using an aqueous acidic solution with a pH of 2.25. The deposition was carried using a three electrode system in potentiostatic conditions for 50 minutes. The as-deposited and nitrogen (N2) annealed films were characterized using XRD, FE-SEM and Raman spectroscopy. It has been observed that the SDS has the tendency to suppress the copper selenide (CuxSe) secondary phase which is detrimental to the device performance.

Deposition of thin insulation layers from the gas phase

NASA Technical Reports Server (NTRS)

Behn, R.; Hagedorn, H.; Kammermaier, J.; Kobale, M.; Packonik, H.; Ristow, D.; Seebacher, G.

1981-01-01

The continuous deposition of thin organic dielectric films on metallized carrier foils by glow discharge in monomeric gases is described. Depending on the applied monomers, the films had a dissipation factor of .001 to .003 (1 kHz), a relative permittivity of 2.3 to 2.5 and a resistivity of about 10 to the 17th power omega cm. Additionally, they proved to have a high mechanical homogeneity. Self-healing rolled capacitors with a very high capacitance per volume and of consistently high quality were fabricated from the metallized carrier foils covered with the dielectric film.

A novel platform for minimally invasive delivery of cellular therapy as a thin layer across the subretina for treatment of retinal degeneration

NASA Astrophysics Data System (ADS)

Rotenstreich, Ygal; Tzameret, Adi; Kalish, Sapir E.; Belkin, Michael; Meir, Amilia; Treves, Avraham J.; Nagler, Arnon; Sher, Ifat

2015-03-01

Incurable retinal degenerations affect millions worldwide. Stem cell transplantation rescued visual functions in animal models of retinal degeneration. In those studies cells were transplanted in subretinal "blebs", limited number of cells could be injected and photoreceptor rescue was restricted to areas in proximity to the injection sites. We developed a minimally-invasive surgical platform for drug and cell delivery in a thin layer across the subretina and extravascular spaces of the choroid. The novel system is comprised of a syringe with a blunt-tipped needle and an adjustable separator. Human bone marrow mesenchymal stem cells (hBM-MSCs) were transplanted in eyes of RCS rats and NZW rabbits through a longitudinal triangular scleral incision. No immunosuppressants were used. Retinal function was determined by electroretinogram analysis and retinal structure was determined by histological analysis and OCT. Transplanted cells were identified as a thin layer across the subretina and extravascular spaces of the choroid. In RCS rats, cell transplantation delayed photoreceptor degeneration across the entire retina and significantly enhanced retinal functions. No retinal detachment or choroidal hemorrhages were observed in rabbits following transplantation. This novel platform opens a new avenue for drug and cell delivery, placing the transplanted cells in close proximity to the damaged RPE and retina as a thin layer, across the subretina and thereby slowing down cell death and photoreceptor degeneration, without retinal detachment or choroidal hemorrhage. This new transplantation system may increase the therapeutic effect of other cell-based therapies and therapeutic agents. This study is expected to directly lead to phase I/II clinical trials for autologous hBM-MSCs transplantation in retinal degeneration patients.

Effect of stress nonhomogeneity on the shear melting of a thin boundary lubrication layer.

PubMed

Lyashenko, Iakov A; Filippov, Alexander E; Popov, Mikhail; Popov, Valentin L

2016-11-01

We consider the dynamical properties of boundary lubrication in contact between two atomically smooth solid surfaces separated by an ultrathin layer of lubricant. In contrast to previous works on this topic, we explicitly consider the heterogeneity of tangential stresses, which arises in a contact of elastic bodies that are moved tangentially relative to each other. To describe phase transitions between structural states of the lubricant we use an approach based on the field theory of phase transitions. It is assumed that the lubricant layer, when stressed, can undergo a shear-melting transition of first or second order. While solutions for the homogeneous system can be easily obtained analytically, the kinetics of the phase transitions in the spatially heterogeneous system can only be studied numerically. In our numerical experiments melting of the lubricant layer starts from the outer boundary of contact and propagates to its center. The melting wave is followed by a wave of solidification. This process repeats itself periodically, following the stick-slip pattern that is characteristic of such systems. Depending on the thermodynamic and kinetic parameters of the model, different modes of sliding with almost complete or only partial intermediate solidification are possible.

Microstructure et proprietes electriques de l'oxyde de vanadium pour les microbolometres

NASA Astrophysics Data System (ADS)

Cadieux, Catherine

Recent technological breakthroughs in the fabrication of microsystems will soon allow the mass production of infrared cameras. Subsequent price cut will open many new sectors of application. Because of its electrical properties, sputtered vanadium oxide has already been identified as the leading candidate for the active material of microbolometers. However, the large number of different crystallographic phases, as well as the instable nature of reactive sputtering, haveled to numerous contradictions in the existing literature. With the objective of understanding the impact of the deposition parameters on the microstructure, and of the microstructure on the electrical properties, vanadium oxide thin films have been deposited and characterised. In order to study their impact on the microstructure, oxidation state and pulse at the target, substrate bias and temperature, power, and film thickness were varied independently. The resulting thin films have been characterised by X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, spectral reflectometry, optical interferometry as well as four-point probe and Van Der Pauw electrical measurements. Because of the instability of the poisoning regime, the actual system configuration forbids the deposition of phases with composition between V 3O7 and V7O3. Films deposited under a strong bias in the poisoned regime having the best properties, their growth mechanism has been thoroughly investigated. Under those conditions, the bombarding ions are energetic enough to modify the structure of the underlying thin film without resputtering it. A complex relation linking temperature, thickness and microstructure is observed. As the thickness is increased, the structure changes from amorphous, to almost monocristalline V2O5 (001) oriented, to polycristalline. For higher deposition power, the polycristalline section contains V3O7 in addition to the multiple orientations of V2O5. Those germinations which have already been observed but not explained in literature can be attributed to the accumulation of germination centers, a stress buildup for the crystalline sections, and a substrate heating caused by the ions bombardment. This last effect is also suggested to be the cause of the amorphous phase crystallisation for the films with longer deposition times. Films deposited at different temperatures show the same microstructure transitions. Two different behavior regimes can be proposed as function of the adatoms' energy. For low temperature, increasing the adatom energy increases the diffusion which promotes the formation of the lowest surface energy stoichiometry and orientation, V2O 5(001). At higher temperature, energy is sufficient to form more energetically expensive orientation and phases. Resistivity is strongly dependant on grain boundaries density as seen by its relationship with lateral grain size. The thin film resistivity is also increased with the number of different crystallographic orientation present in it. To circumvent the high sheet resistance of the deposited single layer films, a multilayer stacking of alternating oxides and metal layers has been deposited. This approach has permitted this project's industrial collaborator to obtain a sheet resistance of 250 kO/□and a TCR of -1.59 %/K. The microstructure of the multilayer is however very heterogeneous. Not only can the metal layers be identified, it is also possible to observe the amorphous to polycrystalline transition described higher for every oxide layer. This multilayer, as well as the best single layer film produced have been annealed for 2 hours at 400°C in high vacuum. The annealed multilayer doesn't show any diffraction peaks, has very low resistance, and an almost null TCR generally attributed to metallic compounds We suggest that the diffusion of the vanadium layers into the stack created a polycrystalline structure with grains that are too small to be seen by XRD. The single layer underwent thermal reduction to form the VO2(B)phase and also became very conductive. Its TCR was afterward measured at the interesting value of -1.74 %/K. Is it suggested that the low resistivity is caused by the presence of small grains of the metallic phase of VO2, which happens to be the next step in the reduction process. Single layer annealing seems to be a promising avenue for the development of films adequate for microbolometer integration with the present deposition system. It is nonetheless recommended to pursue this avenue using films that are homogenous on their thickness in order to decouple the thickness dependence of deposition and thermal reduction. Multilayers using already homogenous amorphous oxides can also be a solution. Finally, non-reactive deposition of tungsten doped thin films followed by an oxidizing anneal may be an option that would bypass the uniformity and stability problems of the present project.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Plasmon-enhanced solar energy conversion in organic bulk heterojunction photovoltaics

NASA Astrophysics Data System (ADS)

Morfa, Anthony J.; Rowlen, Kathy L.; Reilly, Thomas H.; Romero, Manuel J.; van de Lagemaat, Jao

2008-01-01

Plasmon-active silver nanoparticle layers were included in solution-processed bulk-heterojunction solar cells. Nanoparticle layers were fabricated using vapor-phase deposition on indium tin oxide electrodes. Owing to the increase in optical electrical field inside the photoactive layer, the inclusion of such particle films lead to increased optical absorption and consequently increased photoconversion at solar-conversion relevant wavelengths. The resulting solar energy conversion efficiency for a bulk heterojunction photovoltaic device of poly(3-hexylthiophene)/[6,6]-phenyl C61 butyric acid methyl ester was found to increase from 1.3%±0.2% to 2.2%±0.1% for devices employing thin plasmon-active layers. Based on six measurements, the improvement factor of 1.7 was demonstrated to be statistically significant.

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

PubMed

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

Potentiometric NO2 Sensors Based on Thin Stabilized Zirconia Electrolytes and Asymmetric (La0.8Sr0.2)0.95MnO3 Electrodes

PubMed Central

Zou, Jie; Zheng, Yangong; Li, Junliang; Zhan, Zhongliang; Jian, Jiawen

2015-01-01

Here we report on a new architecture for potentiometric NO2 sensors that features thin 8YSZ electrolytes sandwiched between two porous (La0.8Sr0.2)0.95MnO3 (LSM95) layers—one thick and the other thin—fabricated by the tape casting and co-firing techniques. Measurements of their sensing characteristics show that reducing the porosity of the supporting LSM95 reference electrodes can increase the response voltages. In the meanwhile, thin LSM95 layers perform better than Pt as the sensing electrode since the former can provide higher response voltages and better linear relationship between the sensitivities and the NO2 concentrations over 40–1000 ppm. The best linear coefficient can be as high as 0.99 with a sensitivity value of 52 mV/decade as obtained at 500 °C. Analysis of the sensing mechanism suggests that the gas phase reactions within the porous LSM95 layers are critically important in determining the response voltages. PMID:26205270

Evolution of zirconyl-stearate Langmuir monolayers and the synthesized ZrO2 thin films with pH

NASA Astrophysics Data System (ADS)

Choudhary, Raveena; Sharma, Rajni; Brar, Loveleen K.

2018-04-01

ZrO2 thin films have a wide range of applications ranging from photonics, antireflection coatings, and resistive oxygen gas sensors, as a gate dielectric and in high temperature fuel cells. We have used the deposition of zirconyl stearate monolayers followed by their oxidation as a method for the synthesis of zirconium oxide thin films. The zirconyl stearate films have been studied and deposited for first time to the best of our knowledge. The Langmuir monolayers are studied using pressure-Area (π-A) isotherms and oscillatory barrier method. The morphology of the films for limited number of layers was studied with FE-SEM to determine the effect of pH on the final ZrO2 film. The 200 layer deposition films show pure monoclinic phase. The films have a band gap ˜6.0eV with a strong PL emission peak is at 490 nm and a weak peak is at 423 nm. So the films formed by this deposition method are suitable for luminescent applications

Epitaxial Fe16N2 thin film on nonmagnetic seed layer

NASA Astrophysics Data System (ADS)

Hang, Xudong; Zhang, Xiaowei; Ma, Bin; Lauter, Valeria; Wang, Jian-Ping

2018-05-01

Metastable α″ -Fe16N2 has attracted much interest as a candidate for rare-earth-free hard magnetic materials. We demonstrate that Fe16N2 thin films were grown epitaxially on Cr seed layers with MgO (001) substrates by facing-target sputtering. Good crystallinity with the epitaxial relation MgO (001 )[110 ] ∥ Cr (001 )[100 ] ∥ Fe16N2 (001 )[100 ] was obtained. The chemical order parameter, which quantifies the degree of N ordering in the Fe16N2 (the N-disordered phase is α' -Fe8N martensite), reaches 0.75 for Cr-seeded samples. Cr has a perfect lattice constant match with Fe16N2, and no noticeable strain can be assigned to Fe16N2. The intrinsic saturation magnetization of this non-strained Fe16N2 thin film at room temperature is determined to be 2.31 T by polarized neutron reflectometry and confirmed with vibrating sample magnetometry. Our work provides a platform to directly study the magnetic properties of high purity Fe16N2 films with a high order parameter.

Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, S.Q.; Mayer, J.W.

1989-03-01

Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobaltmore » compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.« less

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

A model for thin layer formation by delayed particle settling at sharp density gradients

NASA Astrophysics Data System (ADS)

Prairie, Jennifer C.; White, Brian L.

2017-02-01

Thin layers - regions where plankton or particles accumulate vertically on scales of a few meters or less - are common in coastal waters, and have important implications for both trophic dynamics and carbon cycling. These features can form by a variety of biological and physical mechanisms, including localized growth, shear-thinning, and directed swimming. An additional mechanism may result in the formation of thin layers of marine aggregates, which have been shown to decrease their settling velocity when passing through sharp density gradients, a behavior termed delayed settling. Here, we apply a simple vertical advection-diffusion model to predict the properties of aggregate thin layers formed by this process. We assume a constant vertical flux of particles from the surface, which is parameterized by observations from laboratory experiments with marine aggregates. The formation, maintenance, and shape of the layers are described in relation to non-dimensional numbers that depend on environmental conditions and particle settling properties. In particular, model results demonstrate layer intensity and sharpness both increase with higher Péclet number (Pe), that is, under conditions with weaker mixing relative to layer formation. Similarly, more intense and sharper layers are found when the delayed settling behavior of aggregates is characterized by a lower velocity minimum. The model also predicts layers that are vertically asymmetric and highly "peaky" when compared with a Gaussian distribution, features often seen in thin layers in natural environments. Lastly, by comparing model predictions with observations of thin layers in the field, we are able to gain some insight into the applicability of delayed settling as a thin layer formation mechanism in different environmental conditions.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Room temperature rubbing for few-layer two-dimensional thin flakes directly on flexible polymer substrates

PubMed Central

Yu, Yan; Jiang, Shenglin; Zhou, Wenli; Miao, Xiangshui; Zeng, Yike; Zhang, Guangzu; Liu, Sisi

2013-01-01

The functional layers of few-layer two-dimensional (2-D) thin flakes on flexible polymers for stretchable applications have attracted much interest. However, most fabrication methods are “indirect” processes that require transfer steps. Moreover, previously reported “transfer-free” methods are only suitable for graphene and not for other few-layer 2-D thin flakes. Here, a friction based room temperature rubbing method is proposed for fabricating different types of few-layer 2-D thin flakes (graphene, hexagonal boron nitride (h-BN), molybdenum disulphide (MoS2), and tungsten disulphide (WS2)) on flexible polymer substrates. Commercial 2-D raw materials (graphite, h-BN, MoS2, and WS2) that contain thousands of atom layers were used. After several minutes, different types of few-layer 2-D thin flakes were fabricated directly on the flexible polymer substrates by rubbing procedures at room temperature and without any transfer step. These few-layer 2-D thin flakes strongly adhere to the flexible polymer substrates. This strong adhesion is beneficial for future applications. PMID:24045289

A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants

DOE PAGES

Park, Min Hyuk; Schenk, Tony; Fancher, Christopher M.; ...

2017-04-19

The origin of the unexpected ferroelectricity in doped HfO 2 thin films is now considered to be the formation of a non-centrosymmetric Pca2 1 orthorhombic phase. Due to the polycrystalline nature of the films as well as their extremely small thickness (~10 nm) and mixed orientation and phase composition, structural analysis of doped HfO 2 thin films remains a challenging task. As a further complication, the structural similarities of the orthorhombic and tetragonal phase are difficult to distinguish by typical structural analysis techniques such as X-ray diffraction. To resolve this issue, the changes in the grazing incidence X-ray diffraction (GIXRD)more » patterns of HfO 2 films doped with Si, Al, and Gd are systematically examined. For all dopants, the shift of o111/ t101 diffraction peak is observed with increasing atomic layer deposition (ALD) cycle ratio, and this shift is thought to originate from the orthorhombic to P4 2/ nmc tetragonal phase transition with decreasing aspect ratio (2 a/(b + c) for orthorhombic and c/a for the tetragonal phase). For quantitative phase analysis, Rietveld refinement is applied to the GIXRD patterns. A progressive phase transition from P2 1/c monoclinic to orthorhombic to tetragonal is confirmed for all dopants, and a strong relationship between orthorhombic phase fraction and remanent polarization value is uniquely demonstrated. The concentration range for the ferroelectric properties was the narrowest for the Si-doped HfO 2 films. As a result, the dopant size is believed to strongly affect the concentration range for the ferroelectric phase stabilization, since small dopants can strongly decrease the free energy of the tetragonal phase due to their shorter metal–oxygen bonds.« less

A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Min Hyuk; Schenk, Tony; Fancher, Christopher M.

The origin of the unexpected ferroelectricity in doped HfO 2 thin films is now considered to be the formation of a non-centrosymmetric Pca2 1 orthorhombic phase. Due to the polycrystalline nature of the films as well as their extremely small thickness (~10 nm) and mixed orientation and phase composition, structural analysis of doped HfO 2 thin films remains a challenging task. As a further complication, the structural similarities of the orthorhombic and tetragonal phase are difficult to distinguish by typical structural analysis techniques such as X-ray diffraction. To resolve this issue, the changes in the grazing incidence X-ray diffraction (GIXRD)more » patterns of HfO 2 films doped with Si, Al, and Gd are systematically examined. For all dopants, the shift of o111/ t101 diffraction peak is observed with increasing atomic layer deposition (ALD) cycle ratio, and this shift is thought to originate from the orthorhombic to P4 2/ nmc tetragonal phase transition with decreasing aspect ratio (2 a/(b + c) for orthorhombic and c/a for the tetragonal phase). For quantitative phase analysis, Rietveld refinement is applied to the GIXRD patterns. A progressive phase transition from P2 1/c monoclinic to orthorhombic to tetragonal is confirmed for all dopants, and a strong relationship between orthorhombic phase fraction and remanent polarization value is uniquely demonstrated. The concentration range for the ferroelectric properties was the narrowest for the Si-doped HfO 2 films. As a result, the dopant size is believed to strongly affect the concentration range for the ferroelectric phase stabilization, since small dopants can strongly decrease the free energy of the tetragonal phase due to their shorter metal–oxygen bonds.« less

High-temperature deformation and microstructural analysis for Si3N4-Sc2O3

NASA Technical Reports Server (NTRS)

Cheong, Deock-Soo; Sanders, William A.

1990-01-01

It was indicated that Si3N4 doped with Sc2O3 may exhibit high temperature mechanical properties superior to Si3N4 systems with various other oxide sintered additives. High temperature deformation of samples was studied by characterizing the microstructures before and after deformation. It was found that elements of the additive, such as Sc and O, exist in small amounts at very thin grain boundary layers and most of them stay in secondary phases at triple and multiple grain boundary junctions. These secondary phases are devitrified as crystalline Sc2Si2O7. Deformation of the samples was dominated by cavitational processes rather than movements of dislocations. Thus the excellent deformation resistance of the samples at high temperature can be attributed to the very small thickness of the grain boundary layers and the crystalline secondary phase.

High-temperature deformation and microstructural analysis for silicon nitride-scandium(III) oxide

NASA Technical Reports Server (NTRS)

Cheong, Deock-Soo; Sanders, William A.

1992-01-01

It was indicated that Si3N4 doped with Sc2O3 may exhibit high temperature mechanical properties superior to Si3N4 systems with various other oxide sintered additives. High temperature deformation of samples was studied by characterizing the microstructures before and after deformation. It was found that elements of the additive, such as Sc and O, exist in small amounts at very thin grain boundary layers and most of them stay in secondary phases at tripple and multiple grain boundary junctions. These secondary phases are devitrified as crystalline Sc2Si2O7. Deformation of the samples was dominated by cavitational processes rather than movements of dislocations. Thus the excellent deformation resistance of the samples at high temperature can be attributed to the very small thickness of the grain boundary layers and the crystalline secondary phase.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

NASA Astrophysics Data System (ADS)

Huang, Zhiquan

Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a+nc)-Si:H thin films are obtained. The underlying materials for these depositions were newly-deposited intrinsic a-Si:H layers on thermal oxide coated crystalline silicon wafers, designed to simulate specific device configurations. As a result, these growth evolution diagrams can be applied to both p-i-n and n-i-p solar cell optimization. In this thesis, the n-layer growth evolution diagram expressed in terms of hydrogen dilution ratio was applied in correlations with the performance of p-i-n single junction devices in order to optimize these devices. Moreover, ex-situ mapping SE was also employed over the area of multilayer structures in order to achieve better statistics for solar cell optimization by correlating structural parameters locally with small area solar cell performance parameters. In the study of (a-Si:H p-i-n)/(nc-Si:H p-i-n) tandem solar cells, RTSE was successfully applied to monitor the fabrication of the top cell, and efforts to optimize the nanocrystalline p-layer and i-layer of the bottom cell were initiated.

Nonenzymatic detection of glucose using BaCuO2 thin layer

NASA Astrophysics Data System (ADS)

Ito, Takeshi; Asada, Tsuyoshi; Asai, Naoto; Shimizu, Tomohiro; Shingubara, Shoso

2017-01-01

A BaCuO2 thin layer was deposited on a glassy carbon electrode and used for the direct oxidation of glucose. The crystalline, electrochemical, and physicochemical properties that depend on the deposition temperature and deposition time were studied. X-ray diffraction (XRD) analysis showed that the thin layer was amorphous even at 400 °C. The current density of the glucose oxidation using the thin layer deposited at 200 °C was higher than those at other deposition temperatures. Under this condition, the current density increased with the glucose concentration and deposition time. These results indicate that a BaCuO2 thin layer has potential for measuring the blood glucose level without enzymes.

Methods for making thin layers of crystalline materials

DOEpatents

Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

2013-07-23

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

Multilayer adsorption of C2H4 and CF4 on graphite: Grand Canonical Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Abdelatif, H.; Drir, M.

2016-11-01

We study the phase transitions in adsorbed multilayers by Grand Canonical Monte Carlo simulations (GCMC) of the lattice-gas model. The focus will be on ethylene (C2H4) and tetrafluoromethane (CF4) on a homogeneous graphite surface. Earlier simulations of these systems investigated structural properties, dynamical behaviors of adsorbed films and thermodynamic quantities such as isosteric heat. The main purpose of this study is to consider the adsorbed multilayers by the evaluation of the layering behavior, the wetting phenomena and the critical temperatures. The isotherms obtained for temperature from 50 K to 170 K reproduce a number of interesting features observed experimentally: (i) we observe an important number of layers in contrast with previous simulations, (ii) a finite number of layers at saturated pressure for low temperatures are found, (iii) the isotherms present vertical steps typical of layer-by-layer growth, at higher temperatures these distinct layers tend to disappear signifying that the film thickness increases continuously, (iv) a thin film to thick film transition near the triple point temperature is noticed. In addition to this qualitative description, quantitative information are determined including temperatures and relative pressures of layers formation, layer-critical-point temperatures and phase diagrams. Comparing the two systems, ethylene/graphite and tetrafluoromethane/graphite, we observe a qualitatively similar behavior.

Synthesis and magnetic properties of the thin film exchange spring system of MnBi/FeCo

NASA Astrophysics Data System (ADS)

Sabet, S.; Hildebrandt, E.; Alff, L.

2017-10-01

Manganese bismuth thin films with a nominal thickness of ∼40 nm were grown at room temperature onto quartz glass substrate in a DC magnetron sputtering unit. In contrast to the usual multilayer approach, the MnBi films were deposited using a single sputtering target with a stoichiometry of Mn55Bi45 (at. %). A subsequent in-situ annealing step was performed in vacuum in order to form the ferromagnetic LTP of MnBi. X-ray diffraction confirmed the formation of a textured LTP MnBi hard phase after annealing at 330 °C. This film shows a maximum saturation magnetization of 530 emu/cm3, high out-of-plane coercivity of 15 kOe induced by unreacted bismuth. The exchange coupling effect was investigated by deposition of a second layer of FeCo with 1 nm and 2 nm thickness onto the LTP MnBi films. The MnBi/FeCo double layer showed as expected higher saturation magnetization with increasing thickness of the FeCo layer while the coercive field remained constant. The fabrication of the MnBi/FeCo double layer for an exchange spring magnet was facilitated by deposition from a single stoichiometric target.

Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babu, B. J.; Egaas, B.; Velumani, S.

Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGSmore » absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.« less

Tunable inversion symmetry in heterostructures of layered oxides

NASA Astrophysics Data System (ADS)

Rondinelli, James

Traditional approaches to create and control functional electronic materials have focused on new phases in previously unknown bulk minerals. More recently, interlayer physics has spawned interest in known materials in unexplored atomic scale geometries, especially in complex transition metal oxides (TMO), where heterostructures can be created on demand. In this talk, I show that although epitaxial strain routinely induces (enhances) electric polarizations, biaxial strain can also induce an unanticipated polar-to-nonpolar (P-NP) structural transition in (001) thin films of naturally layered An + 1Bn O3n+1 (n = 1 - ∞) oxides. Density functional theory calculations and a complete phenomenological model for Ca3Ti2O7 are used to show that the origin of the P-NP transition originates from the interplay of trilinear-related lattice mode interactions active in the layered oxides, and those interactions are directly strain tunable. Moreover these layered oxides exhibit a quasi-two dimensional phonon mode-an acoustic branch with quadratic dispersion, enabling unusual membrane effects such as tunable negative thermal expansion. I conclude by emphasizing that broken inversion symmetric structures offer a plentiful playground for realizing new functionalities in thin films, including new multiferroics from polar metals.

Whiter, brighter, and more stable cellulose paper coated with TiO2 /SiO2 core/shell nanoparticles using a layer-by-layer approach.

PubMed

Cheng, Fei; Lorch, Mark; Sajedin, Seyed Mani; Kelly, Stephen M; Kornherr, Andreas

2013-08-01

To inhibit the photocatalytic degradation of organic material supports induced by small titania (TiO2 ) nanoparticles, four kinds of TiO2 nanoparticles, that is, commercial P25-TiO2 , commercial rutile phase TiO2 , rutile TiO2 nanorods and rutile TiO2 spheres, prepared from TiCl4 , were coated with a thin, but dense, coating of silica (SiO2 ) using a conventional sol-gel technique to form TiO2 /SiO2 core/shell nanoparticles. These core/shell particles were deposited and fixed as a very thin coating onto the surface of cellulose paper samples by a wet-chemistry polyelectrolyte layer-by-layer approach. The TiO2 /SiO2 nanocoated paper samples exhibit higher whiteness and brightness and greater stability to UV-bleaching than comparable samples of blank paper. There are many potential applications for this green chemistry approach to protect cellulosic fibres from UV-bleaching in sunlight and to improve their whiteness and brightness. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Numerical studies of the use of thin high-Z layers for reducing laser imprint in direct-drive inertial-fusion targets

NASA Astrophysics Data System (ADS)

Bates, Jason; Schmitt, Andrew; Karasik, Max; Obenschain, Steve

2012-10-01

Using the FAST code, we present numerical studies of the effect of thin metallic layers with high atomic number (high-Z) on the hydrodynamics of directly-driven inertial-confinement-fusion (ICF) targets. Previous experimental work on the NIKE Laser Facility at the U.S. Naval Research Laboratory demonstrated that the use of high-Z layers may be efficacious in reducing laser non-uniformities imprinted on the target during the start-up phase of the implosion. Such a reduction is highly desirable in a direct-drive ICF scenario because laser non-uniformities seed hydrodynamic instabilities that can amplify during the implosion process, prevent uniform compression and spoil high gain. One of the main objectives of the present work is to assess the utility of high-Z layers for achieving greater laser uniformity in polar-drive target designs planned for the National Ignition Facility. To address this problem, new numerical routines have recently been incorporated in the FAST code, including an improved radiation-transfer package and a three-dimensional ray-tracing algorithm. We will discuss these topics, and present initial simulation results for high-Z planar-target experiments planned on the NIKE Laser Facility later this year.

Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Wheeler, Virginia D.; Downey, Brian P.; Robinson, Zachary R.; Meyer, David J.; Eddy, Charles R.; Kub, Fritz J.

2017-10-01

Amorphous vanadium oxide (VO2) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 °C for 1-2 h under a low oxygen pressure (10-4 to 10-5 Torr). Under these conditions the crystalline VO2 phase was maintained, while formation of the V2O5 phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 °C range, with an ROFF/RON ratio of up to about 750 and ΔTC ≅ 7-10 °C. Lateral electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO2 sample processed with the 2 h long O2 anneal. Both the width and slope of the field induced MIT I-V hysteresis were dependent upon the VO2 crystalline quality.

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

DOE PAGES

Marshall, Patrick B.; Kim, Honggyu; Ahadi, Kaveh; ...

2017-09-01

We report on the growth of epitaxial Sr 2RuO 4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO 4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr 2RuO 4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electronmore » microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.« less

Ultimately short ballistic vertical graphene Josephson junctions

PubMed Central

Lee, Gil-Ho; Kim, Sol; Jhi, Seung-Hoon; Lee, Hu-Jong

2015-01-01

Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a cleaved graphene monoatomic layer as the normal-conducting spacer between superconducting electrodes. The atomically thin single-crystalline graphene layer serves as an ultimately short conducting channel, with highly transparent interfaces with superconductors. In particular, we show the strong Josephson coupling reaching the theoretical limit, the convex-shaped temperature dependence of the Josephson critical current and the exceptionally skewed phase dependence of the Josephson current; all demonstrate the bona fide short and ballistic Josephson nature. This vertical stacking scheme for extremely thin transparent spacers would open a new pathway for exploring the exotic coherence phenomena occurring on an atomic scale. PMID:25635386

Correlation between nano-scale microstructural behavior and the performance of ZnO thin-film transistors.

PubMed

Ahn, Cheol Hyoun; Lee, Ju Ho; Lee, Jeong Yong; Cho, Hyung Koun

2014-12-01

Binary ZnO active layers possessing a polycrystalline structure were deposited with various argon/oxygen flow ratios at 250 degrees C via sputtering. Then ZnO thin-film-transistors (TFTs) were fabricated without additional thermal treatments. As the oxygen content increased during the deposition, the preferred orientation along the (0002) was weakened and the rotation of the grains increased, and furthermore, less conducting films were observed. On the other hand, the reduced oxygen flow rate induced the formation of amorphous-like transition layers during the initial growth due to a high growth rate and high energetic bombardment of the adatoms. As a result, the amorphous phases at the gate dielectric/channel interface were responsible for the formation of a hump shape in the subthreshold region of the TFT transfer curve. In addition, the relationship between the crystal properties and the shift in the threshold voltage was experimentally confirmed by a hysteresis test.

Domain matching epitaxy of BaBiO3 on SrTiO3 with structurally modified interface

NASA Astrophysics Data System (ADS)

Zapf, M.; Stübinger, M.; Jin, L.; Kamp, M.; Pfaff, F.; Lubk, A.; Büchner, B.; Sing, M.; Claessen, R.

2018-04-01

The perovskite BaBiO3 (BBO) is a versatile oxide parent material which displays superconductivity upon p-doping, while n-doping has been predicted to establish a wide-bandgap topological insulator phase. Here, we report on a mechanism that allows for epitaxial deposition of high-quality crystalline BBO thin films on SrTiO3 substrates despite a significant lattice mismatch of as large as 12%. It is revealed that the growth takes place through domain matching epitaxy, resulting in domains with alternating lateral sizes of 8 and 9 BBO unit cells. In particular, a structurally modified interface layer is identified which serves as a nucleation layer for the BBO films and gradually relieves the strain by decoupling the film lattice from the substrate. The BBO growth mechanism identified here may be prototypical for prospective thin film deposition of other perovskites with large lattice constants.

Imbibition with swelling: Capillary rise in thin deformable porous media

NASA Astrophysics Data System (ADS)

Kvick, Mathias; Martinez, D. Mark; Hewitt, Duncan R.; Balmforth, Neil J.

2017-07-01

The imbibition of a liquid into a thin deformable porous substrate driven by capillary suction is considered. The substrate is initially dry and has uniform porosity and thickness. Two-phase flow theory is used to describe how the liquid flows through the pore space behind the wetting front when out-of-plane deformation of the solid matrix is considered. Neglecting gravity and evaporation, standard shallow-layer scalings are used to construct a reduced model of the dynamics. The model predicts convergence to a self-similar behavior in all regions except near the wetting front, where a boundary layer arises whose structure narrows with the advance of the front. Over time, the rise height approaches the similarity scaling of t1 /2, as in the classical Washburn or BCLW law. The results are compared with a series of laboratory experiments using cellulose paper sheets, which provide qualitative agreement.

Improving the properties of zinc oxide thin-film surface acoustic wave device on glass substrate by introducing double alumina layers

NASA Astrophysics Data System (ADS)

Shih, Wen-Ching; Huang, Yi-Fan; Wu, Mu-Shiang

2017-10-01

ZnO films with c-axis (0002) orientation have been successfully grown by RF magnetron sputtering on Al2O3/glass substrates. The alumina films were firstly deposited on glass substrates, and then secondly deposited on interdigital transducer/ZnO film/alumina film/glass substrates by electron beam evaporation. The crystalline structure and surface roughness of the films were investigated by X-ray diffraction and atomic force microscopy, respectively. The phase velocity and coupling coefficient of the surface acoustic wave (SAW) device were both increased when we deposited the double alumina layers. On the other hand, the temperature coefficient of frequency becomes better if we increase the thickness of the lower alumina film. The experimental result is beneficial for improving the performance of the ZnO thin-film SAW devices on inexpensive glass substrates.

Microstructures and thermochromic characteristics of VO2/AZO composite films

NASA Astrophysics Data System (ADS)

Xiao, Han; Li, Yi; Yuan, Wenrui; Fang, Baoying; Wang, Xiaohua; Hao, Rulong; Wu, Zhengyi; Xu, Tingting; Jiang, Wei; Chen, Peizu

2016-05-01

A vanadium dioxide (VO2) thin film was fabricated on a ZnO doped with Al (AZO) conductive glass by magnetron sputtering at room temperature followed by annealing under air atmosphere. The microstructures and optical properties of the thin film were studied. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. Compared to the VO2 film fabricated on soda-lime glass substrate through the same process and condition, the phase transition temperature of the VO2/AZO composite film was decreased by about 25 °C, thermal hysteresis width narrowed to 6 °C, the visible light transmittance was over 50%, the infrared transmittances before and after phase transition were 21% and 55%, respectively at 1500 nm.

Non-Reciprocal on Wafer Microwave Devices

DTIC Science & Technology

2015-05-27

filter uses a barium hexagonal ferrite film incorporated into the dielectric layer of a microstrip transmission line. The zero-field operational...Fal,, Robert E. Camley. Millimeter wave phase shifter based on ferromagnetic resonancein a hexagonal barium ferrite thin film, Applied Physics...materials for on-wafer microwave devices concentrated on barium hexagonal ferrite (BaM) films grown on Si because these material is a good candidate

NBIT Program Phase I (2007-2010). Part 1, Chapters 1 Through 4

DTIC Science & Technology

2009-08-27

2 schematically shows the sample prepared before hydrothermal synthesis . The thin layer of Zn was convered to ZnO nanowires during hydrothermal ... Nanoparticle -Based Magnetically Amplified Surface Plasmon Resonance (Mag-SPR) Techniques; Jinwoo Cheon (Yonsei University, Korea) and A. Paul...Ion; Chapter 3 ? Ultra-Sensitive Biological Detection via Nanoparticle -Based Magnetically Amplified Surface Plasmon Resonance (Mag-SPR) Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazyak, Eric; Chen, Kuan-Hung; Wood, Kevin N.

Lithium solid electrolytes are a promising platform for achieving high energy density, long-lasting, and safe rechargeable batteries, which could have widespread societal impact. In particular, the ceramic oxide garnet Li7La3Zr2O12 (LLZO) has been shown to be a promising electrolyte due to its stability and high ionic conductivity. Two major challenges for commercialization are manufacturing of thin layers and creating stable, low-impedance, interfaces with both anode and cathode materials. Atomic Layer Deposition (ALD) has recently been shown as a potential method for depositing both solid electrolytes and interfacial layers to improve the stability and performance at electrode-electrolyte interfaces in battery systems.more » Herein we present the first reported ALD process for LLZO, demonstrating the ability to tune composition within the amorphous film and anneal to achieve the desired cubic garnet phase. Formation of the cubic phase was observed at temperatures as low as 555°C, significantly lower than is required for bulk processing. Additionally, challenges associated with achieving a dense garnet phase due to substrate reactivity, morphology changes and Li loss under the necessary high temperature annealing are quantified via in situ synchrotron diffraction.« less

Ternary blend polymer solar cells with self-assembled structure for enhancing power conversion efficiency

NASA Astrophysics Data System (ADS)

Yang, Zhenhua; Li, Hongfei; Nam, Chang-Yong; Kisslinger, Kim; Satija, Sushil; Rafailovich, Miriam

Bulk heterojunction (BHJ) polymer solar cells are an area of intense interest due to their advantages such as mechanical flexibility. The active layer is typically spin coated from the solution of polythiophene derivatives (donor) and fullerenes (acceptor) and interconnected domains are formed because of phase separation. However, the power conversion efficiency (PCE) of BHJ solar cell is restricted by the disordered inner structures in the active layer, donor or acceptor domains isolated from electrodes. Here we report a self-assembled columnar structure formed by phase separation between (PCDTBT) and polystyrene (PS) for the active layer morphology optimization. The BHJ solar cell device based on this structure is promising for exhibiting higher performance due to the shorter carrier transportation pathway and larger interfacial area between donor and acceptor. The surface morphology is investigated with atomic force microscopy (AFM) and the columnar structure is studied by investigation of cross-section of the blend thin film of PCDTBT and PS under the transmission electron microscopy (TEM). The different morphological structures formed via phase segregation are correlated with the performance of the BHJ solar cells.

Use of gas-phase ethanol to mitigate extreme UV/water oxidation of extreme UV optics

NASA Astrophysics Data System (ADS)

Klebanoff, L. E.; Malinowski, M. E.; Clift, W. M.; Steinhaus, C.; Grunow, P.

2004-03-01

A technique is described that uses a gas-phase species to mitigate the oxidation of a Mo/Si multilayer optic caused by either extreme UV (EUV) or electron-induced dissociation of adsorbed water vapor. It is found that introduction of ethanol (EtOH) into a water-rich gas-phase environment inhibits oxidation of the outermost Si layer of the Mo/Si EUV reflective coating. Auger electron spectroscopy, sputter Auger depth profiling, EUV reflectivity, and photocurrent measurements are presented that reveal the EUV/water- and electron/water-derived optic oxidation can be suppressed at the water partial pressures used in the tests (~2×10-7-2×10-5 Torr). The ethanol appears to function differently in two time regimes. At early times, ethanol decomposes on the optic surface, providing reactive carbon atoms that scavenge reactive oxygen atoms before they can oxidize the outermost Si layer. At later times, the reactive carbon atoms form a thin (~5 Å), possibly self-limited, graphitic layer that inhibits water adsorption on the optic surface. .

Numerical simulation of viscoelastic layer rearrangement in polymer melts using OpenFOAM®

DOE Office of Scientific and Technical Information (OSTI.GOV)

Köpplmayr, Thomas, E-mail: tkoepplmayr@gmail.com; Mayrhofer, Elias

In addition to their shear-thinning behavior, polymer melts are characterized by first and second normal stress differences, which cause secondary motions. Polymer coextrusion processes involve viscoelastic two-phase flows that influence layer formation. Using polymer melts with different pigmentation makes visible the layers deformed by second normal stress differences. We used a new solver for the OpenFOAM CFD toolbox which handles viscoelastic two-phase flows. A derivative of the volume-of-fluid (VoF) methodology was employed to describe the interface. Different types of polymer melt, such as polyethylene (PE), polypropylene (PP) and polyethylene terephthalate (PET) were investigated. In a coextrusion process, the less viscousmore » phase usually tends to encapsulate the more viscous one. However, the different viscoelastic properties of the melts also influence interface deformation. The materials were characterized by small-amplitude oscillatory-shear rheometry, and a multimode Giesekus model was used to fit shear viscosity, storage and loss modulus. Our simulations also took interfacial tension into account. Experimental observations and corresponding numerical simulations were found to be in good accordance.« less

Feasibility of correlating separation of ternary mixtures of neutral analytes via thin layer chromatography with supercritical fluid chromatography in support of green flash separations.

PubMed

Ashraf-Khorassani, M; Yan, Q; Akin, A; Riley, F; Aurigemma, C; Taylor, L T

2015-10-30

Method development for normal phase flash liquid chromatography traditionally employs preliminary screening using thin layer chromatography (TLC) with conventional solvents on bare silica. Extension to green flash chromatography via correlation of TLC migration results, with conventional polar/nonpolar liquid mixtures, and packed column supercritical fluid chromatography (SFC) retention times, via gradient elution on bare silica with a suite of carbon dioxide mobile phase modifiers, is reported. Feasibility of TLC/SFC correlation is individually described for eight ternary mixtures for a total of 24 neutral analytes. The experimental criteria for TLC/SFC correlation was assumed to be as follows: SFC/UV/MS retention (tR) increases among each of the three resolved mixture components; while, TLC migration (Rf) decreases among the same resolved mixture components. Successful correlation of TLC to SFC was observed for most of the polar organic solvents tested, with the best results observed via SFC on bare silica with methanol as the CO2 modifier and TLC on bare silica with a methanol/dichloromethane mixture. Copyright © 2015 Elsevier B.V. All rights reserved.

Large magnetoelectric coupling in magnetically short-range ordered Bi₅Ti₃FeO₁₅ film.

PubMed

Zhao, Hongyang; Kimura, Hideo; Cheng, Zhenxiang; Osada, Minoru; Wang, Jianli; Wang, Xiaolin; Dou, Shixue; Liu, Yan; Yu, Jianding; Matsumoto, Takao; Tohei, Tetsuya; Shibata, Naoya; Ikuhara, Yuichi

2014-06-11

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a robust room-temperature magneto-electric coupling in a bismuth-layer-structured ferroelectric Bi₅Ti₃FeO₁₅ with high ferroelectric Curie temperature of ~1000 K. Bi₅Ti₃FeO₁₅ thin films grown by pulsed laser deposition are single-phase layered perovskit with nearly (00l)-orientation. Room-temperature multiferroic behavior is demonstrated by a large modulation in magneto-polarization and magneto-dielectric responses. Local structural characterizations by transmission electron microscopy and Mössbauer spectroscopy reveal the existence of Fe-rich nanodomains, which cause a short-range magnetic ordering at ~620 K. In Bi₅Ti₃FeO₁₅ with a stable ferroelectric order, the spin canting of magnetic-ion-based nanodomains via the Dzyaloshinskii-Moriya interaction might yield a robust magneto-electric coupling of ~400 mV/Oe·cm even at room temperature.

Simultaneous determination of atenolol and amlodipine in tablets by high-performance thin-layer chromatography.

PubMed

Argekar, A P; Powar, S G

2000-01-01

A new simple, precise, rapid and selective high-performance thin-layer chromatographic (HPTLC) method has been developed for the simultaneous determination of atenolol (ATL) and amlodipine (AMLO) in tablets, using methylene chloride:methanol:ammonia solution (25% NH3) (8.8:1.3:0.1; v/v) as the mobile phase and Merck HPTLC plates (0.2 mm thickness) precoated with 60F254 silica gel on aluminium sheet as the stationary phase. Detection was carried out densitometrically using a UV detector at 230 nm. The retention factors of ATL and AMLO were 0.33 and 0.75, respectively. Calibration curves were linear in the range 10-500 microg ml(-1) for both. Assays of ATL and AMLO were 49.87 mg per tablet (relative standard deviation (R.S.D.), 1.3%) and 4.90 mg per tablet (R.S.D., 1.38%) for brand I, and 49.27 mg per tablet (R.S.D., 1.12%) and 4.98 mg per tablet (R.S.D., 1.42%) for brand II, respectively. The percentage recoveries for ATL and AMLO for brands I and II were 99.06 and 99.30%, and 99.27 and 99.15%, respectively.

Validated stability-indicating densitometric thin-layer chromatography: application to stress degradation studies of minocycline.

PubMed

Jain, Nilu; Jain, Gaurav Kumar; Ahmad, Farhan Jalees; Khar, Roop Krishen

2007-09-19

A simple, stability-indicating high-performance thin-layer liquid chromatographic (HPTLC) method for analysis of minocycline was developed and validated. The densitometric analysis was carried out at 345 nm using methanol-acetonitrile-isopropyl alcohol-water (5:4:0.5:0.5, v/v/v/v) as mobile phase. The method employed TLC aluminium plates pre-coated with silica gel 60F-254 as the stationary phase. To achieve good result, plates were sprayed with a 10% (w/v) solution of disodium ethylene diaminetetraacetic acid (EDTA), the pH of which was adjusted to 9.0. Compact spots of minocycline were found at R(f) = 0.30+/-0.02. For proposed procedure, linearity (r = 0.9997), limit of detection (3.7 ng spot(-1)), recovery (99.23-100.16%), and precision (% R.S.D. < or = 0.364) was found to be satisfactory. The drug undergoes acidic and basic degradation, oxidation and photodegradation. All the peaks of degradation products were well resolved from the pure drug with significantly different R(f) values. The acidic and alkaline degradation kinetics of minocycline, evaluated using this method, is found to be of first order.

Study of electrical and magnetic properties of RE doped layered cobaltite thin films

NASA Astrophysics Data System (ADS)

Bapna, K.; Choudhary, R. J.; Phase, D. M.; Rawat, R.; Ahuja, B. L.

2018-05-01

Thin films of layered perovskites Sr1.5RE0.5CoO4 (RE = La, Gd) were grown on MgO (0 0 1) substrate using pulsed laser ablation method. Structural, electrical and magnetic properties of single phase oriented films were studied. Films reveal semiconducting behavior in the entire measured temperature range. The films show thermally activated behavior at high temperature regime, with a higher value of activation energy for SGCO than that for SLCO. The low temperature behavior is well fitted with 3D-variable range hopping mechanism. Both films showed negative magneto-resistance measured in temperature range of 10-200 K. The value of MR is large for SGCO film as compared to its bulk counterpart as well as SLCO film, suggesting its high potential in the spintronics applications. A pinch-shaped M-H behaviour as observed in both the films, suggests the presence of two-magnetic phases. Occurrence of pinch-shape behaviour is although in line with that of SLCO bulk counterpart, interestingly, it was absent in SGCO polycrystalline powder. It suggests major role of film growth kinetics in modifying the magnetic properties in cobaltites.

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

ERIC Educational Resources Information Center

Schmidt, Daniel J.; Pridgen, Eric M.; Hammond, Paula T.; Love, J. Christopher

2010-01-01

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly in the context of thin films and to expose students to the concepts of functional polymeric coatings. Students dip coat…

Temperature controlled evolution of monoclinic to super-tetragonal phase of epitaxial BiFeO3 thin films on La0.67Sr0.33MnO3 buffered SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Singh, Anar; Kaifeng, Dong; Chen, Jing-Sheng

2018-03-01

Epitaxial BiFeO3 thin films of 130nm were deposited by pulsed laser deposition (PLD) technique on La0.67Sr0.33MnO3 buffered SrTiO3 (001) substrate at various temperatures under different ambient oxygen pressures. Reciprocal space mapping reveals that, with decreasing temperature and oxygen pressure, the broadly reported monoclinic phase (MA) of BiFeO3 thin film initially transforms to a tetragonal phase (T1) with c/a =1.05 (1) in a narrow girth of deposition condition and then to a super-tetragonal phase (T2) with giant c/a = 1.24 (1), as confirmed by reciprocal space mapping using high resolution x-ray diffraction. The surface morphology of the films reveals the island growth of the BiFeO3 films deposited at low temperatures. We propose that the transformation from monoclinic to the super-tetragonal phase is essentially due to the manifestation of excess local strain as a result of the island growth. This study offers a recipe to grow the super-tetragonal phase of BiFeO3, with giant c/a =1.24 (1) which exhibits exceptionally large ferroelectric polarization, on ferromagnetic layer La0.67Sr0.33MnO3. This phase of BiFeO3 can be utilized for the ferroelectric control of magnetism at the interface of BiFeO3 and La0.67Sr0.33MnO3.

Characterization of MAPLE deposited WO3 thin films for electrochromic applications

NASA Astrophysics Data System (ADS)

Boyadjiev, S. I.; Stefan, N.; Szilágyi, I. M.; Mihailescu, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Besleaga, C.; Iliev, M. T.; Gesheva, K. A.

2017-01-01

Tungsten trioxide (WO3) is a widely studied material for electrochromic applications. The structure, morphology and optical properties of WO3 thin films, grown by matrix assisted pulsed laser evaporation (MAPLE) from monoclinic WO3 nano-sized particles, were investigated for their possible application as electrochromic layers. A KrF* excimer (λ=248 nm, ζFWHM=25 ns) laser source was used in all experiments. The MAPLE deposited WO3 thin films were studied by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and Fourier transform infrared spectroscopy (FTIR). Cyclic voltammetry measurements were also performed, and the coloring and bleaching were observed. The morpho-structural investigations disclosed the synthesis of single-phase monoclinic WO3 films consisting of crystalline nano-grains embedded in an amorphous matrix. All thin films showed good electrochromic properties, thus validating application of the MAPLE deposition technique for the further development of electrochromic devices.

Lattice structure and magnetization of LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Rata, A. D.; Herklotz, A.; Schultz, L.; Dörr, K.

2010-07-01

We investigate the structure and magnetic properties of thin films of the LaCoO3 compound. Thin films are deposited by pulsed laser deposition on various substrates in order to tune the strain from compressive to tensile. Single-phase (001) oriented LaCoO3 layers were grown on all substrates despite large misfits. The tetragonal distortion of the films covers a wide range from -2% to 2.8%. Our LaCoO3 films are ferromagnetic with Curie temperature around 85 K, contrary to the bulk. The total magnetic moment is below 1 μ B /Co3+, a value relatively small for an exited spin-state of the Co3+ ions, but comparable to values reported in literature. A correlation of strain states and magnetic moment of Co3+ ions in LaCoO3 thin films is observed.

Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

NASA Astrophysics Data System (ADS)

Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

2018-05-01

A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

Gyrotactic trapping: A numerical study

NASA Astrophysics Data System (ADS)

Ghorai, S.

2016-04-01

Gyrotactic trapping is a mechanism proposed by Durham et al. ["Disruption of vertical motility by shear triggers formation of thin Phytoplankton layers," Science 323, 1067-1070 (2009)] to explain the formation of thin phytoplankton layer just below the ocean surface. This mechanism is examined numerically using a rational model based on the generalized Taylor dispersion theory. The crucial role of sedimentation speed in the thin layer formation is demonstrated. The effects of variation in different parameters on the thin layer formation are also investigated.

[High performance thin-layer chromatography in specific blood diagnosis (author's transl)].

PubMed

Bernardelli, B; Masotti, G

1976-01-01

Furthering their research into the differentiation of various haemoglobins (both human and animal) with the use of thin layer chromatographic methods, the Authors have applied Kaiser's high performance thin layer chromatography (HPTLC) to the specific diagnosis of blood. Although the method was superior to ascending one-dimensional thin layer chromatography for its sensitivity, Rf reproducibility and much briefer migration times, it did not turn out to be suitable for application to the specific requirements of forensic haematology.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Effect of Indium nano-sandwiching on the structural and optical performance of ZnSe films

NASA Astrophysics Data System (ADS)

Al Garni, S. E.; Qasrawi, A. F.

In the current study, we attempted to explore the effects of the Indium nanosandwiching on the mechanical and optical properties of the physically evaporated ZnSe thin films by means of X-ray diffractions and ultraviolet spectrophotometry techniques. While the thickness of each layer of ZnSe was fixed at 1.0 μm, the thickness of the nanosandwiched Indium thin films was varied in the range of 25-100 nm. It was observed that the as grown ZnSe films exhibits cubic and hexagonal nature of crystallization as those of the ZnSe powders before the film deposition. The cubic phases weighs ∼70% of the structure. The analysis of this phases revealed that there is a systematic variation process presented by the decreasing of; the lattice constant, compressing strain, stress, stacking faults and dislocation intensity and increasing grain size resulted from increasing the Indium layer thickness in the range of 50-100 nm. In addition, the nanosandwiching of Indium between two layers of ZnSe is observed to enhance the absorbability of the ZnSe. Particularly, at incident photon energy of 2.38 eV the absorbability of the ZnSe films which are sandwiched with 100 nm Indium is increased by 13.8 times. Moreover, increasing the thickness of the Indium layer shrinks the optical energy band gap. These systematic variations in mechanical and optical properties are assigned to the better recrystallization process that is associated with Indium insertion which in turn allows total internal energy redistribution in the ZnSe films through the enlargement of grains.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition.

PubMed

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-19

Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.