Recent Advances on Neuromorphic Systems Using Phase-Change Materials.

PubMed

Wang, Lei; Lu, Shu-Ren; Wen, Jing

2017-12-01

Realization of brain-like computer has always been human's ultimate dream. Today, the possibility of having this dream come true has been significantly boosted due to the advent of several emerging non-volatile memory devices. Within these innovative technologies, phase-change memory device has been commonly regarded as the most promising candidate to imitate the biological brain, owing to its excellent scalability, fast switching speed, and low energy consumption. In this context, a detailed review concerning the physical principles of the neuromorphic circuit using phase-change materials as well as a comprehensive introduction of the currently available phase-change neuromorphic prototypes becomes imperative for scientists to continuously progress the technology of artificial neural networks. In this paper, we first present the biological mechanism of human brain, followed by a brief discussion about physical properties of phase-change materials that recently receive a widespread application on non-volatile memory field. We then survey recent research on different types of neuromorphic circuits using phase-change materials in terms of their respective geometrical architecture and physical schemes to reproduce the biological events of human brain, in particular for spike-time-dependent plasticity. The relevant virtues and limitations of these devices are also evaluated. Finally, the future prospect of the neuromorphic circuit based on phase-change technologies is envisioned.

Nonvolatile Memory Technology for Space Applications

NASA Technical Reports Server (NTRS)

Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

2010-01-01

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Temperature-driven topological quantum phase transitions in a phase-change material Ge2Sb2Te5.

PubMed

Eremeev, S V; Rusinov, I P; Echenique, P M; Chulkov, E V

2016-12-13

The Ge 2 Sb 2 Te 5 is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its electronic structure is currently not fully understood. The present work sheds new light on the electronic structure of the Ge 2 Sb 2 Te 5 crystalline phases. We demonstrate by predicting from first-principles calculations that stable crystal structures of Ge 2 Sb 2 Te 5 possess different topological quantum phases: a topological insulator phase is realized in low-temperature structure and Weyl semimetal phase is a characteristic of the high-temperature structure. Since the structural phase transitions are caused by the temperature the switching between different topologically non-trivial phases can be driven by variation of the temperature. The obtained results reveal the rich physics of the Ge 2 Sb 2 Te 5 compound and open previously unexplored possibility for spintronics applications of this material, substantially expanding its application potential.

A self-resetting spiking phase-change neuron

NASA Astrophysics Data System (ADS)

Cobley, R. A.; Hayat, H.; Wright, C. D.

2018-05-01

Neuromorphic, or brain-inspired, computing applications of phase-change devices have to date concentrated primarily on the implementation of phase-change synapses. However, the so-called accumulation mode of operation inherent in phase-change materials and devices can also be used to mimic the integrative properties of a biological neuron. Here we demonstrate, using physical modelling of nanoscale devices and SPICE modelling of associated circuits, that a single phase-change memory cell integrated into a comparator type circuit can deliver a basic hardware mimic of an integrate-and-fire spiking neuron with self-resetting capabilities. Such phase-change neurons, in combination with phase-change synapses, can potentially open a new route for the realisation of all-phase-change neuromorphic computing.

A self-resetting spiking phase-change neuron.

PubMed

Cobley, R A; Hayat, H; Wright, C D

2018-05-11

Neuromorphic, or brain-inspired, computing applications of phase-change devices have to date concentrated primarily on the implementation of phase-change synapses. However, the so-called accumulation mode of operation inherent in phase-change materials and devices can also be used to mimic the integrative properties of a biological neuron. Here we demonstrate, using physical modelling of nanoscale devices and SPICE modelling of associated circuits, that a single phase-change memory cell integrated into a comparator type circuit can deliver a basic hardware mimic of an integrate-and-fire spiking neuron with self-resetting capabilities. Such phase-change neurons, in combination with phase-change synapses, can potentially open a new route for the realisation of all-phase-change neuromorphic computing.

The effect of magnetic field on shape memory behavior in Heusler-type nickel(,2)manganese-gallium-based compounds

NASA Astrophysics Data System (ADS)

Jeong, Soon-Jong

2000-08-01

Shape memory alloys (SMAs) have excellent mechanical properties showing large stroke and high power density when used as actuators. In terms of response speed, however, conventional SMAs have a drawback due to the isothermal nature of the associated phase transformation. A new type of SMA, called ferromagnetic SMA, is considered to replace conventional SMAs and is hoped to overcome such a slow response drawback by changing driving mode of shape memory behaviors from thermal to magnetic. The new type of ferromagnetic SMAs is expected to exhibit not only a large displacement but also rapid response when magnetic field is applied and removed. There are three kinds of ferromagnetic SMAs and among them, Ni2MnGa-based compounds exhibit prominent shape memory effects and superelasticity. In this study, Ni2MnGa-based alloys were chosen and studied to characterize shape memory behavior upon the application and removal of magnetic field. The relevance of the magnetic field-induced shape memory behavior to the magnetization process was investigated by using transformation and/or the movement of martensite variant interfaces. Two mechanisms have been proposed for controlling magnetic field-induced shape memory behaviors. One mechanism is related to shape memory behavior associated with magnetic field-induced martensitic transformation. The other is related to the rearrangement of martensite variants by magnetic field application. Magnetic field-induced martensitic transformation and shape memory effects for single- and poly-crystalline Ni2MnGa alloys were investigated under various conditions. In single crystalline specimens, it was observed that considerable strain changes are a function of magnetic field at temperatures below Mf (martensite finish temperature). Such strain changes, by application and subsequent removal of magnetic field, may be attributed to the martensite variant motion at lower temperatures than Mf. Magnetic field application made a significant contribution to the martensite transformation and related strain changes (0.3%--0.82%) at temperatures above Af (austenite finish temperature) in some polycrystalline Ni2MnGa alloys, where austenite and martensite phases possess paramagnetic and ferromagnetic properties, respectively.

Microscopic origin of resistance drift in the amorphous state of the phase-change compound GeTe

NASA Astrophysics Data System (ADS)

Gabardi, S.; Caravati, S.; Sosso, G. C.; Behler, J.; Bernasconi, M.

2015-08-01

Aging is a common feature of the glassy state. In the case of phase-change chalcogenide alloys the aging of the amorphous state is responsible for an increase of the electrical resistance with time. This phenomenon called drift is detrimental in the application of these materials in phase-change nonvolatile memories, which are emerging as promising candidates for storage class memories. By means of combined molecular dynamics and electronic structure calculations based on density functional theory, we have unraveled the atomistic origin of the resistance drift in the prototypical phase-change compound GeTe. The drift results from a widening of the band gap and a reduction of Urbach tails due to structural relaxations leading to the removal of chains of Ge-Ge homopolar bonds. The same structural features are actually responsible for the high mobility above the glass transition which boosts the crystallization speed exploited in the device.

Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory

NASA Astrophysics Data System (ADS)

Cheng, Limin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Peng, Cheng; Yao, Dongning; Liu, Bo; Xu, Ling

2013-01-01

The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.

Design rules for phase-change materials in data storage applications.

PubMed

Lencer, Dominic; Salinga, Martin; Wuttig, Matthias

2011-05-10

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-day's Flash memory, are presented. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

DOE PAGES

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; ...

2015-03-17

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge 2Sb 2Te 5) and amore » heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.« less

Observation of polyamorphism in the phase change alloy Ge1Sb2Te4

NASA Astrophysics Data System (ADS)

Kalkan, B.; Sen, S.; Cho, J.-Y.; Joo, Y.-C.; Clark, S. M.

2012-10-01

A high-pressure synchrotron x-ray diffraction study of the phase change alloy Ge1Sb2Te4 demonstrates the existence of a polyamorphic phase transition between the "as deposited" low density amorphous (LDA) phase and a high density amorphous (HDA) phase at ˜10 GPa. The entropy of the HDA phase is expected to be higher than that of the LDA phase resulting in a negative Clapeyron slope for this transition. These phase relations may enable the polyamorphic transition to play a role in the memory and data storage applications.

Ti-Sb-Te alloy: a candidate for fast and long-life phase-change memory.

PubMed

Xia, Mengjiao; Zhu, Min; Wang, Yuchan; Song, Zhitang; Rao, Feng; Wu, Liangcai; Cheng, Yan; Song, Sannian

2015-04-15

Phase-change memory (PCM) has great potential for numerous attractive applications on the premise of its high-device performances, which still need to be improved by employing a material with good overall phase-change properties. In respect to fast speed and high endurance, the Ti-Sb-Te alloy seems to be a promising candidate. Here, Ti-doped Sb2Te3 (TST) materials with different Ti concentrations have been systematically studied with the goal of finding the most suitable composition for PCM applications. The thermal stability of TST is improved dramatically with increasing Ti content. The small density change of T0.32Sb2Te3 (2.24%), further reduced to 1.37% for T0.56Sb2Te3, would greatly avoid the voids generated at phase-change layer/electrode interface in a PCM device. Meanwhile, the exponentially diminished grain size (from ∼200 nm to ∼12 nm), resulting from doping more and more Ti, enhances the adhesion between phase-change film and substrate. Tests of TST-based PCM cells have demonstrated a fast switching rate of ∼10 ns. Furthermore, because of the lower thermal conductivities of TST materials, compared with Sb2Te3-based PCM cells, T0.32Sb2Te3-based ones exhibit lower required pulse voltages for Reset operation, which largely decreases by ∼50% for T0.43Sb2Te3-based ones. Nevertheless, the operation voltages for T0.56Sb2Te3-based cells dramatically increase, which may be due to the phase separation after doping excessive Ti. Finally, considering the decreased resistance ratio, TixSb2Te3 alloy with x around 0.43 is proved to be a highly promising candidate for fast and long-life PCM applications.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.

PubMed

Mitrofanov, Kirill V; Fons, Paul; Makino, Kotaro; Terashima, Ryo; Shimada, Toru; Kolobov, Alexander V; Tominaga, Junji; Bragaglia, Valeria; Giussani, Alessandro; Calarco, Raffaella; Riechert, Henning; Sato, Takahiro; Katayama, Tetsuo; Ogawa, Kanade; Togashi, Tadashi; Yabashi, Makina; Wall, Simon; Brewe, Dale; Hase, Muneaki

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

DOE PAGES

Mitrofanov, Kirill V.; Fons, Paul; Makino, Kotaro; ...

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge 2Sb 2Te 5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structuremore » experiment confirms the existence of an intermediate state with disordered bonds. Furthermore, this newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.« less

Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

NASA Astrophysics Data System (ADS)

Wang, Yong; Zheng, Yonghui; Liu, Guangyu; Li, Tao; Guo, Tianqi; Cheng, Yan; Lv, Shilong; Song, Sannian; Ren, Kun; Song, Zhitang

2018-03-01

To bridge the gap of access time between memories and storage systems, the concept of storage class memory has been put forward based on emerging nonvolatile memory technologies. For all the nonvolatile memory candidates, the unpleasant tradeoff between operation speed and retention seems to be inevitable. To promote both the write speed and the retention of phase change memory (PCM), Sc doped Ge2Sb2Te5 (SGST) has been proposed as the storage medium. Octahedral Sc-Te motifs, acting as crystallization precursors to shorten the nucleation incubation period, are the possible reason for the high write speed of 6 ns in PCM cells, five-times faster than that of Ge2Sb2Te5 (GST) cells. Meanwhile, an enhanced 10-year data retention of 119 °C has been achieved. Benefiting from both the increased crystalline resistance and the inhibited formation of the hexagonal phase, the SGST cell has a 77% reduction in power consumption compared to the GST cell. Adhesion of the SGST/SiO2 interface has been strengthened, attributed to the reduced stress by forming smaller grains during crystallization, guaranteeing the reliability of the device. These improvements have made the SGST material a promising candidate for PCM application.

Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

NASA Astrophysics Data System (ADS)

Rehn, Daniel A.; Li, Yao; Pop, Eric; Reed, Evan J.

2018-01-01

Structural phase-change materials are of great importance for applications in information storage devices. Thermally driven structural phase transitions are employed in phase-change memory to achieve lower programming voltages and potentially lower energy consumption than mainstream nonvolatile memory technologies. However, the waste heat generated by such thermal mechanisms is often not optimized, and could present a limiting factor to widespread use. The potential for electrostatically driven structural phase transitions has recently been predicted and subsequently reported in some two-dimensional materials, providing an athermal mechanism to dynamically control properties of these materials in a nonvolatile fashion while achieving potentially lower energy consumption. In this work, we employ DFT-based calculations to make theoretical comparisons of the energy required to drive electrostatically-induced and thermally-induced phase transitions. Determining theoretical limits in monolayer MoTe2 and thin films of Ge2Sb2Te5, we find that the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe2 at room temperature is 9% of the adiabatic lower limit of the thermally driven phase transition in Ge2Sb2Te5. Furthermore, experimentally reported phase change energy consumption of Ge2Sb2Te5 is 100-10,000 times larger than the adiabatic lower limit due to waste heat flow out of the material, leaving the possibility for energy consumption in monolayer MoTe2-based devices to be orders of magnitude smaller than Ge2Sb2Te5-based devices.

Towards a drift-free multi-level Phase Change Memory

NASA Astrophysics Data System (ADS)

Cinar, Ibrahim; Ozdemir, Servet; Cogulu, Egecan; Gokce, Aisha; Stipe, Barry; Katine, Jordan; Aktas, Gulen; Ozatay, Ozhan

For ultra-high density data storage applications, Phase Change Memory (PCM) is considered a potentially disruptive technology. Yet, the long-term reliability of the logic levels corresponding to the resistance states of a PCM device is an important issue for a stable device operation since the resistance levels drift uncontrollably in time. The underlying mechanism for the resistance drift is considered as the structural relaxation and spontaneous crystallization at elevated temperatures. We fabricated a nanoscale single active layer-phase change memory cell with three resistance levels corresponding to crystalline, amorphous and intermediate states by controlling the current injection site geometry. For the intermediate state and the reset state, the activation energies and the trap distances have been found to be 0.021 eV and 0.235 eV, 1.31 nm and 7.56 nm, respectively. We attribute the ultra-low and weakly temperature dependent drift coefficient of the intermediate state (ν = 0.0016) as opposed to that of the reset state (ν = 0.077) as being due to the dominant contribution of the interfacial defects in electrical transport in the case of the mixed phase. Our results indicate that the engineering of interfacial defects will enable a drift-free multi-level PCM device design.

MoSbTe for high-speed and high-thermal-stability phase-change memory applications

NASA Astrophysics Data System (ADS)

Liu, Wanliang; Wu, Liangcai; Li, Tao; Song, Zhitang; Shi, Jianjun; Zhang, Jing; Feng, Songlin

2018-04-01

Mo-doped Sb1.8Te materials and electrical devices were investigated for high-thermal-stability and high-speed phase-change memory applications. The crystallization temperature (t c = 185 °C) and 10-year data retention (t 10-year = 112 °C) were greatly enhanced compared with those of Ge2Sb2Te5 (t c = 150 °C, t 10-year = 85 °C) and pure Sb1.8Te (t c = 166 °C, t 10-year = 74 °C). X-ray diffraction and transmission electron microscopy results show that the Mo dopant suppresses crystallization, reducing the crystalline grain size. Mo2.0(Sb1.8Te)98.0-based devices were fabricated to evaluate the reversible phase transition properties. SET/RESET with a large operation window can be realized using a 10 ns pulse, which is considerably better than that required for Ge2Sb2Te5 (∼50 ns). Furthermore, ∼1 × 106 switching cycles were achieved.

Refractive index modulation of Sb70Te30 phase-change thin films by multiple femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Lei, Kai; Wang, Yang; Jiang, Minghui; Wu, Yiqun

2016-05-01

In this study, the controllable effective refractive index modulation of Sb70Te30 phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

Refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films by multiple femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Kai; Wang, Yang, E-mail: ywang@siom.ac.cn; Jiang, Minghui

2016-05-07

In this study, the controllable effective refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

Self-assembled phase-change nanowire for nonvolatile electronic memory

NASA Astrophysics Data System (ADS)

Jung, Yeonwoong

One of the most important subjects in nanosciences is to identify and exploit the relationship between size and structural/physical properties of materials and to explore novel material properties at a small-length scale. Scale-down of materials is not only advantageous in realizing miniaturized devices but nanometer-sized materials often exhibit intriguing physical/chemical properties that greatly differ from their bulk counterparts. This dissertation studies self-assembled phase-change nanowires for future nonvolatile electronic memories, mainly focusing on their size-dependent memory switching properties. Owing to the one-dimensional, unique geometry coupled with the small and tunable sizes, bottom-designed nanowires offer great opportunities in terms for both fundamental science and practical engineering perspectives, which would be difficult to realize in conventional top-down based approaches. We synthesized chalcogenide phase-change nanowires of different compositions and sizes, and studied their electronic memory switching owing to the structural change between crystalline and amorphous phases. In particular, we investigated nanowire size-dependent memory switching parameters, including writing current, power consumption, and data retention times, as well as studying composition-dependent electronic properties. The observed size and composition-dependent switching and recrystallization kinetics are explained based on the heat transport model and heterogeneous nucleation theories, which help to design phase-change materials with better properties. Moreover, we configured unconventional heterostructured phase-change nanowire memories and studied their multiple memory states in single nanowire devices. Finally, by combining in-situ/ex-situ electron microscopy techniques and electrical measurements, we characterized the structural states involved in electrically-driven phase-change in order to understand the atomistic mechanism that governs the electronic memory switching through phase-change.

Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations.

PubMed

Sosso, Gabriele C; Miceli, Giacomo; Caravati, Sebastiano; Giberti, Federico; Behler, Jörg; Bernasconi, Marco

2013-12-19

Phase change materials are of great interest as active layers in rewritable optical disks and novel electronic nonvolatile memories. These applications rest on a fast and reversible transformation between the amorphous and crystalline phases upon heating, taking place on the nanosecond time scale. In this work, we investigate the microscopic origin of the fast crystallization process by means of large-scale molecular dynamics simulations of the phase change compound GeTe. To this end, we use an interatomic potential generated from a Neural Network fitting of a large database of ab initio energies. We demonstrate that in the temperature range of the programming protocols of the electronic memories (500-700 K), nucleation of the crystal in the supercooled liquid is not rate-limiting. In this temperature range, the growth of supercritical nuclei is very fast because of a large atomic mobility, which is, in turn, the consequence of the high fragility of the supercooled liquid and the associated breakdown of the Stokes-Einstein relation between viscosity and diffusivity.

Strain-Detecting Composite Materials

NASA Technical Reports Server (NTRS)

Wallace, Terryl A. (Inventor); Smith, Stephen W. (Inventor); Piascik, Robert S. (Inventor); Horne, Michael R. (Inventor); Messick, Peter L. (Inventor); Alexa, Joel A. (Inventor); Glaessgen, Edward H. (Inventor); Hailer, Benjamin T. (Inventor)

2016-01-01

A composite material includes a structural material and a shape-memory alloy embedded in the structural material. The shape-memory alloy changes crystallographic phase from austenite to martensite in response to a predefined critical macroscopic average strain of the composite material. In a second embodiment, the composite material includes a plurality of particles of a ferromagnetic shape-memory alloy embedded in the structural material. The ferromagnetic shape-memory alloy changes crystallographic phase from austenite to martensite and changes magnetic phase in response to the predefined critical macroscopic average strain of the composite material. A method of forming a composite material for sensing the predefined critical macroscopic average strain includes providing the shape-memory alloy having an austenite crystallographic phase, changing a size and shape of the shape-memory alloy to thereby form a plurality of particles, and combining the structural material and the particles at a temperature of from about 100-700.degree. C. to form the composite material.

Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.

PubMed

Wang, Weijie; Loke, Desmond; Shi, Luping; Zhao, Rong; Yang, Hongxin; Law, Leong-Tat; Ng, Lung-Tat; Lim, Kian-Guan; Yeo, Yee-Chia; Chong, Tow-Chong; Lacaita, Andrea L

2012-01-01

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.

Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

PubMed Central

Wang, Weijie; Loke, Desmond; Shi, Luping; Zhao, Rong; Yang, Hongxin; Law, Leong-Tat; Ng, Lung-Tat; Lim, Kian-Guan; Yeo, Yee-Chia; Chong, Tow-Chong; Lacaita, Andrea L.

2012-01-01

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory. PMID:22496956

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Carbon nanomaterials for non-volatile memories

NASA Astrophysics Data System (ADS)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Controlling the volatility of the written optical state in electrochromic DNA liquid crystals

NASA Astrophysics Data System (ADS)

Liu, Kai; Varghese, Justin; Gerasimov, Jennifer Y.; Polyakov, Alexey O.; Shuai, Min; Su, Juanjuan; Chen, Dong; Zajaczkowski, Wojciech; Marcozzi, Alessio; Pisula, Wojciech; Noheda, Beatriz; Palstra, Thomas T. M.; Clark, Noel A.; Herrmann, Andreas

2016-05-01

Liquid crystals are widely used in displays for portable electronic information display. To broaden their scope for other applications like smart windows and tags, new material properties such as polarizer-free operation and tunable memory of a written state become important. Here, we describe an anhydrous nanoDNA-surfactant thermotropic liquid crystal system, which exhibits distinctive electrically controlled optical absorption, and temperature-dependent memory. In the liquid crystal isotropic phase, electric field-induced colouration and bleaching have a switching time of seconds. Upon transition to the smectic liquid crystal phase, optical memory of the written state is observed for many hours without applied voltage. The reorientation of the DNA-surfactant lamellar layers plays an important role in preventing colour decay. Thereby, the volatility of optoelectronic state can be controlled simply by changing the phase of the material. This research may pave the way for developing a new generation of DNA-based, phase-modulated, photoelectronic devices.

Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing.

PubMed

Kuzum, Duygu; Jeyasingh, Rakesh G D; Lee, Byoungil; Wong, H-S Philip

2012-05-09

Brain-inspired computing is an emerging field, which aims to extend the capabilities of information technology beyond digital logic. A compact nanoscale device, emulating biological synapses, is needed as the building block for brain-like computational systems. Here, we report a new nanoscale electronic synapse based on technologically mature phase change materials employed in optical data storage and nonvolatile memory applications. We utilize continuous resistance transitions in phase change materials to mimic the analog nature of biological synapses, enabling the implementation of a synaptic learning rule. We demonstrate different forms of spike-timing-dependent plasticity using the same nanoscale synapse with picojoule level energy consumption.

Improved Functional Properties and Efficiencies of Nitinol Wires Under High-Performance Shape Memory Effect (HP-SME)

NASA Astrophysics Data System (ADS)

Casati, R.; Saghafi, F.; Biffi, C. A.; Vedani, M.; Tuissi, A.

2017-10-01

Martensitic Ti-rich NiTi intermetallics are broadly used in various cyclic applications as actuators, which exploit the shape memory effect (SME). Recently, a new approach for exploiting austenitic Ni-rich NiTi shape memory alloys as actuators was proposed and named high-performance shape memory effect (HP-SME). HP-SME is based on thermal recovery of de-twinned martensite produced by mechanical loading of the parent phase. The aim of the manuscript consists in evaluating and comparing the fatigue and actuation properties of austenitic HP-SME wires and conventional martensitic SME wires. The effect of the thermomechanical cycling on the actuation response and the changes in the electrical resistivity of both shape memory materials were studied by performing the actuation tests at different stages of the fatigue life. Finally, the changes in the transition temperatures before and after cycling were also investigated by differential calorimetric tests.

Mirror-symmetric magneto-optical Kerr rotation using visible light in [(GeTe)2(Sb2Te3)1]n topological superlattices.

PubMed

Bang, Do; Awano, Hiroyuki; Tominaga, Junji; Kolobov, Alexander V; Fons, Paul; Saito, Yuta; Makino, Kotaro; Nakano, Takashi; Hase, Muneaki; Takagaki, Yukihiko; Giussani, Alessandro; Calarco, Raffaella; Murakami, Shuichi

2014-07-17

Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications.

Position, scale, and rotation invariant holographic associative memory

NASA Astrophysics Data System (ADS)

Fielding, Kenneth H.; Rogers, Steven K.; Kabrisky, Matthew; Mills, James P.

1989-08-01

This paper describes the development and characterization of a holographic associative memory (HAM) system that is able to recall stored objects whose inputs were changed in position, scale, and rotation. The HAM is based on the single iteration model described by Owechko et al. (1987); however, the system described uses a self-pumped BaTiO3 phase conjugate mirror, rather than a degenerate four-wave mixing proposed by Owechko and his coworkers. The HAM system can store objects in a position, scale, and rotation invariant feature space. The angularly multiplexed diffuse Fourier transform holograms of the HAM feature space are characterized as the memory unit; distorted input objects are correlated with the hologram, and the nonlinear phase conjugate mirror reduces cross-correlation noise and provides object discrimination. Applications of the HAM system are presented.

Chalcogenide phase-change thin films used as grayscale photolithography materials.

PubMed

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

NASA Astrophysics Data System (ADS)

Xu, Cheng; Liu, Bo; Chen, Yi-Feng; Liang, Shuang; Song, Zhi-Tang; Feng, Song-Lin; Wan, Xu-Dong; Yang, Zuo-Ya; Xie, Joseph; Chen, Bomy

2008-05-01

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Realization of memory effect in smectic X* phase

NASA Astrophysics Data System (ADS)

Kishor, Murthynedi Hari; Madhu Mohan, M. L. N.

2018-09-01

Homologous series of DTA + nBA (where n varies from 2 to 8) comprises of seven homologues, out of which DTA+4BA alone exhibits a new smectic ordering labelled as smectic X*. Hence DTA+4BA is chosen to investigate various chemical, thermal optical and electrical studies. DSC thermograms reveal the transition temperature and enthalpy values of smectic X* phase. FTIR spectroscopy confirms the formation of hydrogen bonding. Variation of tilt angle with temperature is studied and fitted to a power law confirming the Mean field theory predicted value. An interesting feature of this work is the observation of memory effect in smectic X* phase. When an external field is applied to the mesogen in smectic X* phase, the texture undergoes a change and remains invariant even after the field is removed, further the texture of the phase can be erased only by taking it to isotropic temperature. Another proof for memory effect is the dielectric hysteresis in smectic X* recorded with field. Helix in smectic X* is reported. Yet another interesting observation is the identification of parachromatism in smectic X* phase namely the textures remain the same while the colour of the textures changes completely with decrement in the temperature of the mesogen. Dielectric relaxations in Goldstone mode are studied and analyzed with Cole-Cole plots. The relaxation is suppressed on application of field indicative of Arrhenius in nature.

Vibration damping and heat transfer using material phase changes

NASA Technical Reports Server (NTRS)

Kloucek, Petr (Inventor); Reynolds, Daniel R. (Inventor)

2009-01-01

A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

Vibration damping and heat transfer using material phase changes

DOEpatents

Kloucek, Petr [Houston, TX; Reynolds, Daniel R [Oakland, CA

2009-03-24

A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

Characterization of NiTi Shape Memory Damping Elements designed for Automotive Safety Systems

NASA Astrophysics Data System (ADS)

Strittmatter, Joachim; Clipa, Victor; Gheorghita, Viorel; Gümpel, Paul

2014-07-01

Actuator elements made of NiTi shape memory material are more and more known in industry because of their unique properties. Due to the martensitic phase change, they can revert to their original shape by heating when subjected to an appropriate treatment. This thermal shape memory effect (SME) can show a significant shape change combined with a considerable force. Therefore such elements can be used to solve many technical tasks in the field of actuating elements and mechatronics and will play an increasing role in the next years, especially within the automotive technology, energy management, power, and mechanical engineering as well as medical technology. Beside this thermal SME, these materials also show a mechanical SME, characterized by a superelastic plateau with reversible elongations in the range of 8%. This behavior is based on the building of stress-induced martensite of loaded austenite material at constant temperature and facilitates a lot of applications especially in the medical field. Both SMEs are attended by energy dissipation during the martensitic phase change. This paper describes the first results obtained on different actuator and superelastic NiTi wires concerning their use as damping elements in automotive safety systems. In a first step, the damping behavior of small NiTi wires up to 0.5 mm diameter was examined at testing speeds varying between 0.1 and 50 mm/s upon an adapted tensile testing machine. In order to realize higher testing speeds, a drop impact testing machine was designed, which allows testing speeds up to 4000 mm/s. After introducing this new type of testing machine, the first results of vertical-shock tests of superelastic and electrically activated actuator wires are presented. The characterization of these high dynamic phase change parameters represents the basis for new applications for shape memory damping elements, especially in automotive safety systems.

Understanding the fast phase-change mechanism of tetrahedrally bonded Cu2GeTe3 : Comprehensive analyses of electronic structure and transport phenomena

NASA Astrophysics Data System (ADS)

Kobayashi, Keisuke; Skelton, Jonathan M.; Saito, Yuta; Shindo, Satoshi; Kobata, Masaaki; Fons, Paul; Kolobov, Alexander V.; Elliott, Stephen; Ando, Daisuke; Sutou, Yuji

2018-05-01

Cu2GeTe3 (CGT) phase-change material, a promising candidate for advanced fast nonvolatile random-access-memory devices, has a chalcopyritelike structure with s p3 bonding in the crystalline phase; thus, the phase-change (PC) mechanism is considered to be essentially different from that of the standard PC materials (e.g., Ge-Sb-Te) with threefold to sixfold p -like bonding. In order to reveal the PC mechanism of CGT, the electronic structure change due to PC has been investigated by laboratory hard x-ray photoelectron spectroscopy and combined first-principles density-functional theory molecular-dynamics simulations. The valence-band spectra, in both crystalline and amorphous phases, are well simulated by the calculations. An inherent tendency of Te 5 s lone-pair formation and an enhanced participation of Cu 3 d orbitals in the bonding are found to play dominant roles in the PC mechanism. The electrical conductivity of as-deposited films and its change during the PC process is investigated in connection with valence-band spectral changes near the Fermi level. The results are successfully analyzed, based on a model proposed by Davis and Mott for chalcogenide amorphous semiconductors. The results suggest that robustness of the defect-band states against thermal stress is a key to the practical application of this material for memory devices.

An optoelectronic framework enabled by low-dimensional phase-change films.

PubMed

Hosseini, Peiman; Wright, C David; Bhaskaran, Harish

2014-07-10

The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states--amorphous and crystalline--in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young's modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent 'smart' glasses, 'smart' contact lenses and artificial retina devices.

a Thermal Conduction Switch Based on Low Hysteresis Nitife Shape Memory Alloy Helical Springs

NASA Astrophysics Data System (ADS)

Krishnan, V. B.; Bewerse, C.; Notardonato, W. U.; Vaidyanathan, R.

2008-03-01

Shape memory alloy (SMA) actuators possess an inherent property of sensing a change in temperature and delivering significant force against external loads through a shape change resulting from a temperature-induced phase transformation. The utilization of a reversible trigonal (R-phase) to cubic phase transformation in NiTiFe SMAs allows for this strain recovery to occur with reduced hysteresis between the forward and reverse transformations. However, the magnitude of the strain recovery associated with the R-phase transformation is lower than that of the monoclinic to cubic phase transformation. The use of helical springs can compensate for this design constraint as they produce significant stroke when compared to straight elements such as thin strips and wires. This work reports on the development and implementation of NiTiFe helical springs in a low-hysteresis thermal conduction switch for advanced spaceport applications associated with NASA's requirements for future lunar and Mars missions. Such a low-hysteresis thermal conduction switch can provide on-demand heat transfer between two reservoirs at different temperatures.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2011-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2012-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Effect of Thermal Treatments on Ni-Mn-Ga and Ni-Rich Ni-Ti-Hf/Zr High-Temperature Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Santamarta, Ruben; Evirgen, Alper; Perez-Sierra, Aquilina M.; Pons, Jaume; Cesari, Eduard; Karaman, Ibrahim; Noebe, Ron D.

2015-11-01

Among all the promising high-temperature shape memory alloys (HTSMAs), the Ni-Mn-Ga and the Ni-Ti-Hf/Zr systems exhibit interesting shape memory and superelastic properties that may place them in a good position for potential applications. The present work shows that thermal treatments play a crucial role in controlling the martensitic phase transformation characteristics of both systems, but in different ways. On one hand, the equilibrium phase diagram of the Ni-Mn-Ga family allows selecting compositions with high transformation temperatures and outstanding thermal stability at relatively high temperatures in air, showing no significant changes in the transformation behavior for continuous aging up to ˜5 years at 500 °C. Moreover, the excellent thermal stability correlates with a good thermal cyclic stability and an exceptional oxidation resistance of the parent phase. On the other hand, precipitation processes controlled by thermal treatments are needed to manipulate the transformation temperatures, mechanical properties, and thermal stability of Ni-rich Ni-Ti-Hf/Zr alloys to become HTSMAs. These changes in the functional properties are a consequence of the competition between the mechanical and compositional effects of the precipitates on the martensitic transformation.

Regulators of Long-Term Memory Revealed by Mushroom Body-Specific Gene Expression Profiling in Drosophila melanogaster.

PubMed

Widmer, Yves F; Bilican, Adem; Bruggmann, Rémy; Sprecher, Simon G

2018-06-20

Memory formation is achieved by genetically tightly controlled molecular pathways that result in a change of synaptic strength and synapse organization. While for short-term memory traces rapidly acting biochemical pathways are in place, the formation of long-lasting memories requires changes in the transcriptional program of a cell. Although many genes involved in learning and memory formation have been identified, little is known about the genetic mechanisms required for changing the transcriptional program during different phases of long-term memory formation. With Drosophila melanogaster as a model system we profiled transcriptomic changes in the mushroom body, a memory center in the fly brain, at distinct time intervals during appetitive olfactory long-term memory formation using the targeted DamID technique. We describe the gene expression profiles during these phases and tested 33 selected candidate genes for deficits in long-term memory formation using RNAi knockdown. We identified 10 genes that enhance or decrease memory when knocked-down in the mushroom body. For vajk-1 and hacd1 , the two strongest hits, we gained further support for their crucial role in appetitive learning and forgetting. These findings show that profiling gene expression changes in specific cell-types harboring memory traces provides a powerful entry point to identify new genes involved in learning and memory. The presented transcriptomic data may further be used as resource to study genes acting at different memory phases. Copyright © 2018, Genetics.

Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

NASA Astrophysics Data System (ADS)

Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

2016-12-01

In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

Nanophase change for data storage applications.

PubMed

Shi, L P; Chong, T C

2007-01-01

Phase change materials are widely used for date storage. The most widespread and important applications are rewritable optical disc and Phase Change Random Access Memory (PCRAM), which utilizes the light and electric induced phase change respectively. For decades, miniaturization has been the major driving force to increase the density. Now the working unit area of the current data storage media is in the order of nano-scale. On the nano-scale, extreme dimensional and nano-structural constraints and the large proportion of interfaces will cause the deviation of the phase change behavior from that of bulk. Hence an in-depth understanding of nanophase change and the related issues has become more and more important. Nanophase change can be defined as: phase change at the scale within nano range of 100 nm, which is size-dependent, interface-dominated and surrounding materials related. Nanophase change can be classified into two groups, thin film related and structure related. Film thickness and clapping materials are key factors for thin film type, while structure shape, size and surrounding materials are critical parameters for structure type. In this paper, the recent development of nanophase change is reviewed, including crystallization of small element at nano size, thickness dependence of crystallization, effect of clapping layer on the phase change of phase change thin film and so on. The applications of nanophase change technology on data storage is introduced, including optical recording such as super lattice like optical disc, initialization free disc, near field, super-RENS, dual layer, multi level, probe storage, and PCRAM including, superlattice-like structure, side edge structure, and line type structure. Future key research issues of nanophase change are also discussed.

An ultra-fast optical shutter exploiting total light absorption in a phase change material

NASA Astrophysics Data System (ADS)

Jafari, Mohsen; Guo, L. Jay; Rais-Zadeh, Mina

2017-02-01

In this paper, we present an ultra-fast and high-contrast optical shutter with applications in atomic clock assemblies, integrated photonic systems, communication hardware, etc. The shutter design exploits the total light absorption phenomenon in a thin phase change (PC) material placed over a metal layer. The shutter switches between ON and OFF states by changing PC material phase and thus its refractive index. The PC material used in this work is Germanium Telluride (GeTe), a group IV-VI chalcogenide compound, which exhibits good optical contrast when switching from amorphous to crystalline state and vice versa. The stable phase changing behavior and reliability of GeTe and GeSbTe (GST) have been verified in optical memories and RF switches. Here, GeTe is used as it has a lower extinction coefficient in near-IR regions compared to GST. GeTe can be thermally transitioned between two phases by applying electrical pulses to an integrated heater. The memory behavior of GeTe results in zero static power consumption which is useful in applications requiring long time periods between switching activities. We previously demonstrated a meta-surface employing GeTe in sub-wavelength slits with >14 dB isolation at 1.5 μm by exciting the surface plasmon polariton and localized slit resonances. In this work, strong interference effects in a thin layer of GeTe over a gold mirror result in near total light absorption of up to 40 dB (21 dB measured) in the amorphous phase of the shutter at 780 nm with much less fabrication complexity. The optical loss at the shutter ON state is less than 1.5 dB. A nickel chrome (NiCr) heater provides the Joule heating energy required to achieve the crystallographic phase change. The measured switching speed is 2 μs.

Age-related differences in associative memory: Empirical evidence and theoretical perspectives.

PubMed

Naveh-Benjamin, Moshe; Mayr, Ulrich

2018-02-01

Systematic research and anecdotal evidence both indicate declines in episodic memory in older adults in good health without dementia-related disorders. Several hypotheses have been proposed to explain these age-related changes in episodic memory, some of which attribute such declines to a deterioration in associative memory. The current special issue of Psychology and Aging on Age-Related Differences in Associative Memory includes 16 articles by top researchers in the area of memory and aging. Their contributions provide a wealth of empirical work that addresses different aspects of aging and associative memory, including different mediators and predictors of age-related declines in binding and associative memory, cognitive, noncognitive, genetic, and neuro-related ones. The contributions also address the processing phases where these declines manifest themselves and look at ways to ameliorate these age-related declines. Furthermore, the contributions in this issue draw on different theoretical perspectives to explain age-related changes in associative memory and provide a wealth of varying methodologies to assess older and younger adults' performance. Finally, although most of the studies focus on normative/healthy aging, some of them contain insights that are potentially applicable to disorders and pathologies. (PsycINFO Database Record (c) 2018 APA, all rights reserved).

Ga-doped indium oxide nanowire phase change random access memory cells

NASA Astrophysics Data System (ADS)

Jin, Bo; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I.; Kim, Hyoung Seop; Meyyappan, M.; Lee, Jeong-Soo

2014-02-01

Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (˜40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.

W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

NASA Astrophysics Data System (ADS)

Peng, Cheng; Wu, Liangcai; Rao, Feng; Song, Zhitang; Yang, Pingxiong; Song, Hongjia; Ren, Kun; Zhou, Xilin; Zhu, Min; Liu, Bo; Chu, Junhao

2012-09-01

W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb2Te increase markedly by W doping. The Wx(Sb2Te)1-x films crystallize quickly into a stable hexagonal phase with W uniformly distributing in the crystal lattice, which ensures faster SET speed and better operation stability for the application in practical device. PCM device based on W0.07(Sb2Te)0.93 shows ultrafast SET operation (6 ns) and good endurance (1.8 × 105 cycles). W-Sb-Te material is a promising candidate for the trade-off between programming speed and data retention.

Atomic Migration Induced Crystal Structure Transformation and Core-Centered Phase Transition in Single Crystal Ge2Sb2Te5 Nanowires.

PubMed

Lee, Jun-Young; Kim, Jeong-Hyeon; Jeon, Deok-Jin; Han, Jaehyun; Yeo, Jong-Souk

2016-10-12

A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline Ge 2 Sb 2 Te 5 nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices

PubMed Central

Bang, Do; Awano, Hiroyuki; Tominaga, Junji; Kolobov, Alexander V.; Fons, Paul; Saito, Yuta; Makino, Kotaro; Nakano, Takashi; Hase, Muneaki; Takagaki, Yukihiko; Giussani, Alessandro; Calarco, Raffaella; Murakami, Shuichi

2014-01-01

Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications. PMID:25030304

Disorder-induced localization in crystalline phase-change materials.

PubMed

Siegrist, T; Jost, P; Volker, H; Woda, M; Merkelbach, P; Schlockermann, C; Wuttig, M

2011-03-01

Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms leading to metal-insulator transition include electron correlation (Mott transition) or disorder (Anderson localization), but a clear distinction is difficult. Here we report on a metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal-insulator transition is due to strong disorder usually associated only with amorphous solids. With pronounced disorder but weak electron correlation, these phase-change materials form an unparalleled quantum state of matter. Their universal electronic behaviour seems to be at the origin of the remarkable reproducibility of the resistance switching that is crucial to their applications in non-volatile-memory devices. Controlling the degree of disorder in crystalline phase-change materials might enable multilevel resistance states in upcoming storage devices.

Ultralow-fatigue shape memory alloy films

NASA Astrophysics Data System (ADS)

Chluba, Christoph; Ge, Wenwei; Lima de Miranda, Rodrigo; Strobel, Julian; Kienle, Lorenz; Quandt, Eckhard; Wuttig, Manfred

2015-05-01

Functional shape memory alloys need to operate reversibly and repeatedly. Quantitative measures of reversibility include the relative volume change of the participating phases and compatibility matrices for twinning. But no similar argument is known for repeatability. This is especially crucial for many future applications, such as artificial heart valves or elastocaloric cooling, in which more than 10 million transformation cycles will be required. We report on the discovery of an ultralow-fatigue shape memory alloy film system based on TiNiCu that allows at least 10 million transformation cycles. We found that these films contain Ti2Cu precipitates embedded in the base alloy that serve as sentinels to ensure complete and reproducible transformation in the course of each memory cycle.

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials

DOE PAGES

Zalden, Peter; Shu, Michael J.; Chen, Frank; ...

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4In 3Sb 67Te 26. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of thresholdmore » switching and reveals potential applications as an ultrafast electronic switch.« less

A Shape Memory Alloy Based Cryogenic Thermal Conduction Switch

NASA Technical Reports Server (NTRS)

Notardonato, W. U.; Krishnan, V. B.; Singh, J. D.; Woodruff, T. R.; Vaidyanathan, R.

2005-01-01

Shape memory alloys (SMAs) can produce large strains when deformed (e.g., up to 8%). Heating results in a phase transformation and associated recovery of all the accumulated strain. This strain recovery can occur against large forces, resulting in their use as actuators. Thus an SMA element can integrate both sensory and actuation functions, by inherently sensing a change in temperature and actuating by undergoing a shape change as a result of a temperature-induced phase transformation. Two aspects of our work on cryogenic SMAs are addressed here. First - a shape memory alloy based cryogenic thermal conduction switch for operation between dewars of liquid methane and liquid oxygen in a common bulkhead arrangement is discussed. Such a switch integrates the sensor element and the actuator element and can be used to create a variable thermal sink to other cryogenic tanks for liquefaction, densification, and zero boil-off systems for advanced spaceport applications. Second - fabrication via arc-melting and subsequent materials testing of SMAs with cryogenic transformation temperatures for use in the aforementioned switch is discussed.

Logic computation in phase change materials by threshold and memory switching.

PubMed

Cassinerio, M; Ciocchini, N; Ielmini, D

2013-11-06

Memristors, namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase-change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse-induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low-power and high-speed switching. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Effect of 4-Octyldecyloxybenzoic Acid on Liquid-Crystalline Polyurethane Composites with Triple-Shape Memory and Self-Healing Properties

PubMed Central

Ban, Jianfeng; Zhu, Linjiang; Chen, Shaojun; Wang, Yiping

2016-01-01

To better understand shape memory materials and self-healing materials, a new series of liquid-crystalline shape memory polyurethane (LC-SMPU) composites, named SMPU-OOBAm, were successfully prepared by incorporating 4-octyldecyloxybenzoic acid (OOBA) into the PEG-based SMPU. The effect of OOBA on the structure, morphology, and properties of the material has been carefully investigated. The results demonstrate that SMPU-OOBAm has liquid crystalline properties, triple-shape memory properties, and self-healing properties. The incorporated OOBA promotes the crystallizability of both soft and hard segments of SMPU, and the crystallization rate of the hard segment of SMPU decreases when the OOBA-content increases. Additionally, the SMPU-OOBAm forms a two-phase separated structure (SMPU phase and OOBA phase), and it shows two-step modulus changes upon heating. Therefore, the SMPU-OOBAm exhibits triple-shape memory behavior, and the shape recovery ratio decreases with an increase in the OOBA content. Finally, SMPU-OOBAm exhibits self-healing properties. The new mechanism can be ascribed to the heating-induced “bleeding” of OOBA in the liquid crystalline state and the subsequent re-crystallization upon cooling. This successful combination of liquid crystalline properties, triple-shape memory properties, and self-healing properties make the SMPU-OOBAm composites ideal for many promising applications in smart optical devices, smart electronic devices, and smart sensors. PMID:28773914

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

NASA Astrophysics Data System (ADS)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these issues is provided from a materials science point of view.

Synthesis and Screening of Phase Change Chalcogenide Thin Film Materials for Data Storage.

PubMed

Guerin, Samuel; Hayden, Brian; Hewak, Daniel W; Vian, Chris

2017-07-10

A combinatorial synthetic methodology based on evaporation sources under an ultrahigh vacuum has been used to directly synthesize compositional gradient thin film libraries of the amorphous phases of GeSbTe alloys at room temperature over a wide compositional range. An optical screen is described that allows rapid parallel mapping of the amorphous-to-crystalline phase transition temperature and optical contrast associated with the phase change on such libraries. The results are shown to be consistent with the literature for compositions where published data are available along the Sb 2 Te 3 -GeTe tie line. The results reveal a minimum in the crystallization temperature along the Sb 2 Te 3 -Ge 2 Te 3 tie line, and the method is able to resolve subsequent cubic-to-hexagonal phase transitions in the GST crystalline phase. HT-XRD has been used to map the phases at sequentially higher temperatures, and the results are reconciled with the literature and trends in crystallization temperatures. The results clearly delineate compositions that crystallize to pure GST phases and those that cocrystallize Te. High-throughput measurement of the resistivity of the amorphous and crystalline phases has allowed the compositional and structural correlation of the resistivity contrast associated with the amorphous-to-crystalline transition, which range from 5-to-8 orders of magnitude for the compositions investigated. The results are discussed in terms of the compromises in the selection of these materials for phase change memory applications and the potential for further exploration through more detailed secondary screening of doped GST or similar classes of phase change materials designed for the demands of future memory devices.

Visual search for changes in scenes creates long-term, incidental memory traces.

PubMed

Utochkin, Igor S; Wolfe, Jeremy M

2018-05-01

Humans are very good at remembering large numbers of scenes over substantial periods of time. But how good are they at remembering changes to scenes? In this study, we tested scene memory and change detection two weeks after initial scene learning. In Experiments 1-3, scenes were learned incidentally during visual search for change. In Experiment 4, observers explicitly memorized scenes. At test, after two weeks observers were asked to discriminate old from new scenes, to recall a change that they had detected in the study phase, or to detect a newly introduced change in the memorization experiment. Next, they performed a change detection task, usually looking for the same change as in the study period. Scene recognition memory was found to be similar in all experiments, regardless of the study task. In Experiment 1, more difficult change detection produced better scene memory. Experiments 2 and 3 supported a "depth-of-processing" account for the effects of initial search and change detection on incidental memory for scenes. Of most interest, change detection was faster during the test phase than during the study phase, even when the observer had no explicit memory of having found that change previously. This result was replicated in two of our three change detection experiments. We conclude that scenes can be encoded incidentally as well as explicitly and that changes in those scenes can leave measurable traces even if they are not explicitly recalled.

The unified mechanism of aging effects in both martensite and parent phase for shape-memory alloys: atomic-level simulations

NASA Astrophysics Data System (ADS)

Deng, J.; Ding, X.; Suzuki, T.; Otsuka, K.; Lookman, T.; Saxena, A.; Sun, J.; Ren, X.

2011-03-01

Most shape-memory alloys (SMAs) subject to the aging effects not only in the martensite phase but also in the parent phase. These aging effects have been attracted much attention as they strongly affect the practical applications of SMAs. So far, the intrinsic mechanism of them has remained controversial due to the difficulty in visualization of what happens in atomic scale. In the present study, by using a combination of molecular dynamics method and Monte-Carlo method [1], we investigate the aging effects in both martensite and parent phase. We successfully reproduced the thermal behaviors of aging effects for SMAs, i.e., the Af temperature increase with aging time in martensite and the Ms temperature decrease with aging time in parent phase, which keep good agreement with the experimental observations [2]. In addition, quantitative analysis of the atomic configurations during aging reveals that the aging effects are not associated with a change in the average structure.

Nanoscale thermal cross-talk effect on phase-change probe memory.

PubMed

Wang, Lei; Wen, Jing; Xiong, Bangshu

2018-05-14

Phase-change probe memory is considered as one of the most promising means for next-generation mass storage devices. However, the achievable storage density of phase-change probe memory is drastically affected by the resulting thermal cross-talk effect while previously lacking of detailed study. Therefore, a three dimensional model that couples electrical, thermal, and phase-change processes of the Ge2Sb2Te5 media is developed, and subsequently deployed to assess the thermal cross-talk effect based on Si/TiN/ Ge2Sb2Te5/diamond-like carbon structure by appropriately tailoring the electro-thermal and geometrical properties of the storage media stack for a variety of external excitations. The modeling results show that the diamond-like carbon capping with a thin thickness, a high electrical conductivity, and a low thermal conductivity is desired to minimize the thermal cross-talk, while the TiN underlayer has a slight impact on the thermal cross-talk. Combining the modeling findings with the previous film deposition experience, an optimized phase-change probe memory architecture is presented, and its capability of providing ultra-high recording density simultaneously with a sufficiently low thermal cross-talk is demonstrated. . © 2018 IOP Publishing Ltd.

Feasibility study of current pulse induced 2-bit/4-state multilevel programming in phase-change memory

NASA Astrophysics Data System (ADS)

Liu, Yan; Fan, Xi; Chen, Houpeng; Wang, Yueqing; Liu, Bo; Song, Zhitang; Feng, Songlin

2017-08-01

In this brief, multilevel data storage for phase-change memory (PCM) has attracted more attention in the memory market to implement high capacity memory system and reduce cost-per-bit. In this work, we present a universal programing method of SET stair-case current pulse in PCM cells, which can exploit the optimum programing scheme to achieve 2-bit/ 4state resistance-level with equal logarithm interval. SET stair-case waveform can be optimized by TCAD real time simulation to realize multilevel data storage efficiently in an arbitrary phase change material. Experimental results from 1 k-bit PCM test-chip have validated the proposed multilevel programing scheme. This multilevel programming scheme has improved the information storage density, robustness of resistance-level, energy efficient and avoiding process complexity.

On-chip photonic memory elements employing phase-change materials.

PubMed

Rios, Carlos; Hosseini, Peiman; Wright, C David; Bhaskaran, Harish; Pernice, Wolfram H P

2014-03-05

Phase-change materials integrated into nanophotonic circuits provide a flexible way to realize tunable optical components. Relying on the enormous refractive-index contrast between the amorphous and crystalline states, such materials are promising candidates for on-chip photonic memories. Nonvolatile memory operation employing arrays of microring resonators is demonstrated as a route toward all-photonic chipscale information processing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photo-induced optical activity in phase-change memory materials.

PubMed

Borisenko, Konstantin B; Shanmugam, Janaki; Williams, Benjamin A O; Ewart, Paul; Gholipour, Behrad; Hewak, Daniel W; Hussain, Rohanah; Jávorfi, Tamás; Siligardi, Giuliano; Kirkland, Angus I

2015-03-05

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

A Proposal of 3-dimensional Self-organizing Memory and Its Application to Knowledge Extraction from Natural Language

NASA Astrophysics Data System (ADS)

Sakakibara, Kai; Hagiwara, Masafumi

In this paper, we propose a 3-dimensional self-organizing memory and describe its application to knowledge extraction from natural language. First, the proposed system extracts a relation between words by JUMAN (morpheme analysis system) and KNP (syntax analysis system), and stores it in short-term memory. In the short-term memory, the relations are attenuated with the passage of processing. However, the relations with high frequency of appearance are stored in the long-term memory without attenuation. The relations in the long-term memory are placed to the proposed 3-dimensional self-organizing memory. We used a new learning algorithm called ``Potential Firing'' in the learning phase. In the recall phase, the proposed system recalls relational knowledge from the learned knowledge based on the input sentence. We used a new recall algorithm called ``Waterfall Recall'' in the recall phase. We added a function to respond to questions in natural language with ``yes/no'' in order to confirm the validity of proposed system by evaluating the quantity of correct answers.

Changes in the modulation of brain activity during context encoding vs. context retrieval across the adult lifespan.

PubMed

Ankudowich, E; Pasvanis, S; Rajah, M N

2016-10-01

Age-related deficits in context memory may arise from neural changes underlying both encoding and retrieval of context information. Although age-related functional changes in the brain regions supporting context memory begin at midlife, little is known about the functional changes with age that support context memory encoding and retrieval across the adult lifespan. We investigated how age-related functional changes support context memory across the adult lifespan by assessing linear changes with age during successful context encoding and retrieval. Using functional magnetic resonance imaging (fMRI), we compared young, middle-aged and older adults during both encoding and retrieval of spatial and temporal details of faces. Multivariate behavioral partial least squares (B-PLS) analysis of fMRI data identified a pattern of whole-brain activity that correlated with a linear age term and a pattern of whole-brain activity that was associated with an age-by-memory phase (encoding vs. retrieval) interaction. Further investigation of this latter effect identified three main findings: 1) reduced phase-related modulation in bilateral fusiform gyrus, left superior/anterior frontal gyrus and right inferior frontal gyrus that started at midlife and continued to older age, 2) reduced phase-related modulation in bilateral inferior parietal lobule that occurred only in older age, and 3) changes in phase-related modulation in older but not younger adults in left middle frontal gyrus and bilateral parahippocampal gyrus that was indicative of age-related over-recruitment. We conclude that age-related reductions in context memory arise in midlife and are related to changes in perceptual recollection and changes in fronto-parietal retrieval monitoring. Crown Copyright © 2016. Published by Elsevier Inc. All rights reserved.

Application of long-term cultured interferon-gamma enzyme-linked immunospot assay for assessing effector and memory T cell responses in cattle

USDA-ARS?s Scientific Manuscript database

Effector and memory T cells are generated through developmental programing of naïve cells following antigen recognition. If the infection is controlled, up to 95% of the T cells generated during the expansion phase are eliminated (i.e., contraction phase) and memory T cells remain, sometimes for a l...

Long-Time Stability of Ni-Ti-Shape Memory Alloys for Automotive Safety Systems

NASA Astrophysics Data System (ADS)

Strittmatter, Joachim; Gümpel, Paul

2011-07-01

In automotive a lot of electromagnetically, pyrotechnically or mechanically driven actuators are integrated to run comfort systems and to control safety systems in modern passenger cars. Using shape memory alloys (SMA) the existing systems could be simplified, performing the same function through new mechanisms with reduced size, weight, and costs. A drawback for the use of SMA in safety systems is the lack of materials knowledge concerning the durability of the switching function (long-time stability of the shape memory effect). Pedestrian safety systems play a significant role to reduce injuries and fatal casualties caused by accidents. One automotive safety system for pedestrian protection is the bonnet lifting system. Based on such an application, this article gives an introduction to existing bonnet lifting systems for pedestrian protection, describes the use of quick changing shape memory actuators and the results of the study concerning the long-time stability of the tested NiTi-wires. These wires were trained, exposed up to 4 years at elevated temperatures (up to 140 °C) and tested regarding their phase change temperatures, times, and strokes. For example, it was found that A P-temperature is shifted toward higher temperatures with longer exposing periods and higher temperatures. However, in the functional testing plant a delay in the switching time could not be detected. This article gives some answers concerning the long-time stability of NiTi-wires that were missing till now. With this knowledge, the number of future automotive applications using SMA can be increased. It can be concluded, that the use of quick changing shape memory actuators in safety systems could simplify the mechanism, reduce maintenance and manufacturing costs and should be insertable also for other automotive applications.

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

PubMed

Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

Bi-Metallic Composite Structures With Designed Internal Residual Stress Field

NASA Technical Reports Server (NTRS)

Brice, Craig A.

2014-01-01

Shape memory alloys (SMA) have a unique ability to recover small amounts of plastic strain through a temperature induced phase change. For these materials, mechanical displacement can be accomplished by heating the structure to induce a phase change, through which some of the plastic strain previously introduced to the structure can be reversed. This paper introduces a concept whereby an SMA phase is incorporated into a conventional alloy matrix in a co-continuous reticulated arrangement forming a bi-metallic composite structure. Through memory activation of the mechanically constrained SMA phase, a controlled residual stress field is developed in the interior of the structure. The presented experimental data show that the memory activation of the SMA composite component significantly changes the residual stress distribution in the overall structure. Designing the structural arrangement of the two phases to produce a controlled residual stress field could be used to create structures that have much improved durability and damage tolerance properties.

Elevated-Confined Phase-Change Random Access Memory Cells

NASA Astrophysics Data System (ADS)

Lee; Koon, Hock; Shi; Luping; Zhao; Rong; Yang; Hongxin; Lim; Guan, Kian; Li; Jianming; Chong; Chong, Tow

2010-04-01

A new elevated-confined phase-change random access memory (PCRAM) cell structure to reduce power consumption was proposed. In this proposed structure, the confined phase-change region is sitting on top of a small metal column enclosed by a dielectric at the sides. Hence, more heat can be effectively sustained underneath the phase-change region. As for the conventional structure, the confined phase-change region is sitting directly above a large planar bottom metal electrode, which can easily conduct most of the induced heat away. From simulations, a more uniform temperature profile around the active region and a higher peak temperature at the phase-change layer (PCL) in an elevated-confined structure were observed. Experimental results showed that the elevated-confined PCRAM cell requires a lower programming power and has a better scalability than a conventional confined PCRAM cell.

Atomic structure and pressure-induced phase transformations in a phase-change alloy

NASA Astrophysics Data System (ADS)

Xu, Ming

Phase-change materials exist in at least two phases under the ambient condition. One is the amorphous state and another is crystalline phase. These two phases have vastly different physical properties, such as electrical conductivity, optical reflectivity, mass density, thermal conductivity, etc. The distinct physical properties and the fast transformation between amorphous and crystalline phases render these materials the ability to store information. For example, the DVD and the Blue-ray discs take advantage of the optical reflectivity contrast, and the newly developed solid-state memories make use of the large conductivity difference. In addition, both the amorphous and crystalline phases in phase-change memories (PCMs) are very stable at room temperature, and they are easy to be scaled up in the production of devices with large storage density. All these features make phase-change materials the ideal candidates for the next-generation memories. Despite of the fast development of these new memory materials in industry, many fundamental physics problems underlying these interesting materials are still not fully resolved. This thesis is aiming at solving some of the key issues in phase-change materials. Most of phase-change materials are composed of Ge-Sb-Te constituents. Among all these Ge-Sb-Te based materials, Ge2Sb2Te5 (GST) has the best performance and has been frequently studied as a prototypical phase-change material. The first and foremost issue is the structure of the two functioning phases. In this thesis, we investigate the unique atomic structure and bonding nature of amorphous GST (a-GST) and crystalline GST ( c-GST), using ab initio tools and X-ray diffraction (XRD) methods. Their local structures and bonding scenarios are then analyzed using electronic structure calculations. In order to gain insight into the fast phase transformation mechanism, we also carried out a series of high-pressure experiments on GST. Several new polymorphs and their transformations have been revealed under high pressure via in situ XRD and in situ electrical resistivity measurements. The mechanisms of the structural and property changes have been uncovered via ab initio molecular dynamics simulations.

Fast Response Shape Memory Effect Titanium Nickel (TiNi) Foam Torque Tubes

NASA Technical Reports Server (NTRS)

Jardine, Peter

2014-01-01

Shape Change Technologies has developed a process to manufacture net-shaped TiNi foam torque tubes that demonstrate the shape memory effect. The torque tubes dramatically reduce response time by a factor of 10. This Phase II project matured the actuator technology by rigorously characterizing the process to optimize the quality of the TiNi and developing a set of metrics to provide ISO 9002 quality assurance. A laboratory virtual instrument engineering workbench (LabVIEW'TM')-based, real-time control of the torsional actuators was developed. These actuators were developed with The Boeing Company for aerospace applications.

Solid solutions of MnSb as recording media in optical memory applications

NASA Astrophysics Data System (ADS)

Bai, V. S.; Rama Rao, K. V. S.

1984-03-01

Possibilities regarding the use of larger packing densities and faster access times make it potentially feasible to employ optical technology for the development of computer data storage systems with a performance which is 2-4 orders of magnitude better than that of conventional systems. The information can be stored on thin magnetic films using the technique of laser Curie point writing and retrieved with the aid of magnetooptic readout. Thin films of MnBi have been studied extensively as a prospective storage medium. However, certain difficulties arise in connection with a phase transformation. For these reasons, the present investigation is concerned with the possibility of employing as storage medium MnSb, in which such a phase transformation is absent. In the case of MnSb, a change regarding the easy direction of magnetization would be required. Attention is given to several solid solutions of MnSb and the merits of these materials for optical memory applications.

Shape memory alloys: a state of art review

NASA Astrophysics Data System (ADS)

Naresh, C.; Bose, P. S. C.; Rao, C. S. P.

2016-09-01

Shape memory alloys (SMAs) are the special materials that have the ability to return to a predetermined shape when heated. When this alloy is in below transformation temperature it undergoes low yield strength and will deform easily into any new shape which it will retain, if this alloy is heated above its transformation temperature it changes its crystal lattice structure which returns to its real shape. SMAs are remarkably different from other materials are primarily due to shape memory effect (SME) and pseudoelasticity which are related with the specific way the phase transformation occurs, biocompatibility, high specific strength, high corrosion resistance, high wear resistance and high anti-fatigue property. SMA are used in many applications such as aerospace, medical, automobile, tubes, controllers for hot water valves in showers, petroleum industry, vibration dampers, ball bearings, sensors, actuators, miniature grippers, micro valves, pumps, landing gears, eye glass frames, Material for helicopter blades, sprinklers in fine alarm systems packaging devices for electronic materials, dental materials, etc. This paper focuses on introducing shape memory alloy and their applications in past, present and in future, also revealed the concept and mechanism of shape memory materials for a particular requirement. Properties of SMAs, behaviour and characteristics of SMA, summary of recent advances and new application opportunities are also discussed.

The microstructural changes of Ge2Sb2Te5 thin film during crystallization process

NASA Astrophysics Data System (ADS)

Xu, Jingbo; Qi, Chao; Chen, Limin; Zheng, Long; Xie, Qiyun

2018-05-01

Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y.; Zhong, Y. P.; Deng, Y. F.

2013-12-21

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

Messier: A Detailed NVM-Based DIMM Model for the SST Simulation Framework.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Awad, Amro; Voskuilen, Gwendolyn Renae; Rodrigues, Arun F.

2017-02-01

DRAM technology is the main building block of main memory, however, DRAM scaling is becoming very challenging. The main issues for DRAM scaling are the increasing error rates with each new generation, the geometric and physical constraints of scaling the capacitor part of the DRAM cells, and the high power consumption caused by the continuous need for refreshing cell values. At the same time, emerging Non- Volatile Memory (NVM) technologies, such as Phase-Change Memory (PCM), are emerging as promising replacements for DRAM. NVMs, when compared to current technologies e.g., NAND-based ash, have latencies comparable to DRAM. Additionally, NVMs are non-volatile,more » which eliminates the need for refresh power and enables persistent memory applications. Finally, NVMs have promising densities and the potential for multi-level cell (MLC) storage.« less

Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

PubMed Central

Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

2015-01-01

We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology. PMID:25683062

Impact of Recent Hardware and Software Trends on High Performance Transaction Processing and Analytics

NASA Astrophysics Data System (ADS)

Mohan, C.

In this paper, I survey briefly some of the recent and emerging trends in hardware and software features which impact high performance transaction processing and data analytics applications. These features include multicore processor chips, ultra large main memories, flash storage, storage class memories, database appliances, field programmable gate arrays, transactional memory, key-value stores, and cloud computing. While some applications, e.g., Web 2.0 ones, were initially built without traditional transaction processing functionality in mind, slowly system architects and designers are beginning to address such previously ignored issues. The availability, analytics and response time requirements of these applications were initially given more importance than ACID transaction semantics and resource consumption characteristics. A project at IBM Almaden is studying the implications of phase change memory on transaction processing, in the context of a key-value store. Bitemporal data management has also become an important requirement, especially for financial applications. Power consumption and heat dissipation properties are also major considerations in the emergence of modern software and hardware architectural features. Considerations relating to ease of configuration, installation, maintenance and monitoring, and improvement of total cost of ownership have resulted in database appliances becoming very popular. The MapReduce paradigm is now quite popular for large scale data analysis, in spite of the major inefficiencies associated with it.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations.

PubMed

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-27

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

NASA Astrophysics Data System (ADS)

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-01

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Shape memory behavior of single and polycrystalline nickel rich nickel titanium alloys

NASA Astrophysics Data System (ADS)

Kaya, Irfan

NiTi is the most commonly used shape memory alloy (SMA) and has been widely used for bio-medical, electrical and mechanical applications. Nickel rich NiTi shape memory alloys are coming into prominence due to their distinct superelasticity and shape memory properties as compared to near equi-atomic NiTi shape memory alloys. Besides, their lower density and higher work output than steels makes these alloys an excellent candidate for aerospace and automotive industry. Shape memory properties and phase transformation behavior of high Ni-rich Ni54Ti46 (at.%) polycrystals and Ni-rich Ni 51Ti49 (at.%) single-crystals are determined. Their properties are sensitive to heat treatments that affect the phase transformation behavior of these alloys. Phase transformation properties and microstructure were investigated in aged Ni54Ti46 alloys with differential scanning calorimetry (DSC) and transmission electron microscopy (TEM) to reveal the precipitation characteristics and R-phase formation. It was found that Ni54Ti46 has the ability to exhibit perfect superelasticity under high stress levels (~2 GPa) with 4% total strain after 550°C-3h aging. Stress independent R-phase transformation was found to be responsible for the change in shape memory behavior with stress. The shape memory responses of [001], [011] and [111] oriented Ni 51Ti49 single-crystals alloy were reported under compression to reveal the orientation dependence of their shape memory behavior. It has been found that transformation strain, temperatures and hysteresis, Classius-Clapeyron slopes, critical stress for plastic deformation are highly orientation dependent. The effects of precipitation formation and compressive loading at selected temperatures on the two-way shape memory effect (TWSME) properties of a [111]- oriented Ni51Ti49 shape memory alloy were revealed. Additionally, aligned Ni4Ti3 precipitates were formed in a single crystal of Ni51Ti49 alloy by aging under applied compression stress along the [111] direction. Formation of a single family of Ni4Ti3 precipitates were exhibited significant TWSME without any training or deformation. When the homogenized and aged specimens were loaded in martensite, positive TWSME was observed. After loading at high temperature in austenite, the homogenized specimen did not show TWSME while the aged specimen revealed negative TWSME.

Neural correlates of true and false memory in mild cognitive impairment.

PubMed

Sweeney-Reed, Catherine M; Riddell, Patricia M; Ellis, Judi A; Freeman, Jayne E; Nasuto, Slawomir J

2012-01-01

The goal of this research was to investigate the changes in neural processing in mild cognitive impairment. We measured phase synchrony, amplitudes, and event-related potentials in veridical and false memory to determine whether these differed in participants with mild cognitive impairment compared with typical, age-matched controls. Empirical mode decomposition phase locking analysis was used to assess synchrony, which is the first time this analysis technique has been applied in a complex cognitive task such as memory processing. The technique allowed assessment of changes in frontal and parietal cortex connectivity over time during a memory task, without a priori selection of frequency ranges, which has been shown previously to influence synchrony detection. Phase synchrony differed significantly in its timing and degree between participant groups in the theta and alpha frequency ranges. Timing differences suggested greater dependence on gist memory in the presence of mild cognitive impairment. The group with mild cognitive impairment had significantly more frontal theta phase locking than the controls in the absence of a significant behavioural difference in the task, providing new evidence for compensatory processing in the former group. Both groups showed greater frontal phase locking during false than true memory, suggesting increased searching when no actual memory trace was found. Significant inter-group differences in frontal alpha phase locking provided support for a role for lower and upper alpha oscillations in memory processing. Finally, fronto-parietal interaction was significantly reduced in the group with mild cognitive impairment, supporting the notion that mild cognitive impairment could represent an early stage in Alzheimer's disease, which has been described as a 'disconnection syndrome'.

Release from proactive interference in rat spatial working memory.

PubMed

Roberts, William A; MacDonald, Hayden; Brown, Lyn; Macpherson, Krista

2017-09-01

A three-phase procedure was used to produce proactive interference (PI) in one trial on an eight-arm radial maze. Rats were forced to enter four arms for reward on an initial interference phase, to then enter the four remaining arms on a target phase, and to then choose among all eight arms on a retention test, with only the arms not visited in the target phase containing reward. Control trials involved only the target phase and the retention test. Lower accuracy was found on PI trials than on control trials, but performance on PI trials significantly exceeded chance, showing some retention of target memories. Changes in temporal and reward variables between the interference, target, and retention test phases showed release from PI, but changes in context and pattern of arm entry did not. It is suggested that the release from PI paradigm can be used to understand spatial memory encoding in rats and other species.

In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge₂Sb₂Te₅.

PubMed

Skelton, J M; Elliott, S R

2013-05-22

Phase-change materials are the alloys at the heart of an emerging class of next-generation, non-volatile digital memory technologies. However, the widely studied Ge-Sb-Te system possesses several undesirable properties, and enhancing its properties, e.g. by doping, is an area of active research. Various first-row transition-metal dopants have been shown to impart useful property enhancements, but a systematic study of the entire period has yet to be undertaken, and little has been done to investigate their interaction with the host material at the atomic level. We have carried out first-principles computer simulations of the complete phase-change cycle in Ge2Sb2Te5 doped with each of the ten first-row transition metals. In this article, we present a comprehensive survey of the electronic, magnetic and optical properties of these doped materials. We discuss in detail their atomic-level structure, and relate the microscopic behaviours of the dopant atoms to their influence on the Ge2Sb2Te5 host. By considering an entire family of similar materials, we identify trends and patterns which might be used to predict suitable dopants for optimizing materials for specific phase-change applications. The computational method employed here is general, and this materials-discovery approach could be applied in the future to study other families of potential dopants for such materials.

Microstructure and electrical properties of Sb2Te phase-change material

NASA Astrophysics Data System (ADS)

Liu, Guangyu; Wu, Liangcai; Li, Tao; Rao, Feng; Song, Sannian; Liu, Bo; Song, Zhitang

2016-10-01

Phase Change Memory (PCM) has great potential for commercial applications of next generation non-volatile memory (NVM) due to its high operation speed, high endurance and low power consumption. Sb2Te (ST) is a common phase-change material and has fast crystallization speed, while thermal stability is relatively poor and its crystallization temperature is about 142°C. According to the Arrhenius law, the extrapolated failure temperature is about 55°C for ten years. When heated above the crystallization temperature while below the melting point, its structure can be transformed from amorphous phase to hexagonal phase. Due to the growth-dominated crystallization mechanism, the grain size of ST film is large and the diameter of about 300 nm is too large compared with Ge2Sb2Te5 (GST), which may deteriorate the device performance. High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) were employed to study the microstructures and the results indicate that the crystal plane is {110}. In addition, device cells were manufactured and their current-voltage (I-V) and resistance-voltage characteristics were tested, and the results reveal that the threshold voltage (Vth) of ST film is 0.87 V. By researching the basic properties of ST, we can understand its disadvantages and manage to improve its performance by doping or other proper methods. Finally, the improved ST can be a candidate for optical discs and PCM.

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

PubMed

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

Relation between bandgap and resistance drift in amorphous phase change materials

PubMed Central

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-01-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift. PMID:26621533

Relation between bandgap and resistance drift in amorphous phase change materials.

PubMed

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-12-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

Effects of the swimming exercise on the consolidation and persistence of auditory and contextual fear memory.

PubMed

Faria, Rodolfo Souza; Gutierres, Luís Felipe Soares; Sobrinho, Fernando César Faria; Miranda, Iris do Vale; Reis, Júlia Dos; Dias, Elayne Vieira; Sartori, Cesar Renato; Moreira, Dalmo Antonio Ribeiro

2016-08-15

Exposure to negative environmental events triggers defensive behavior and leads to the formation of aversive associative memory. Cellular and molecular changes in the central nervous system underlie this memory formation, as well as the associated behavioral changes. In general, memory process is established in distinct phases such as acquisition, consolidation, evocation, persistence, and extinction of the acquired information. After exposure to a particular event, early changes in involved neural circuits support the memory consolidation, which corresponds to the short-term memory. Re-exposure to previously memorized events evokes the original memory, a process that is considered essential for the reactivation and consequent persistence of memory, ensuring that long-term memory is established. Different environmental stimuli may modulate the memory formation process, as well as their distinct phases. Among the different environmental stimuli able of modulating memory formation is the physical exercise which is a potent modulator of neuronal activity. There are many studies showing that physical exercise modulates learning and memory processes, mainly in the consolidation phase of the explicit memory. However, there are few reports in the literature regarding the role of physical exercise in implicit aversive associative memory, especially at the persistence phase. Thus, the present study aimed to investigate the relationship between swimming exercise and the consolidation and persistence of contextual and auditory-cued fear memory. Male Wistar rats were submitted to sessions of swimming exercise five times a week, over six weeks. After that, the rats were submitted to classical aversive conditioning training by a pairing tone/foot shock paradigm. Finally, rats were evaluated for consolidation and persistence of fear memory to both auditory and contextual cues. Our results demonstrate that classical aversive conditioning with tone/foot shock pairing induced consolidation as well as persistence of conditioned fear memory. In addition, rats submitted to swimming exercise over six weeks showed an improved performance in the test of auditory-cued fear memory persistence, but not in the test of contextual fear memory persistence. Moreover, no significant effect from swimming exercise was observed on consolidation of both contextual and auditory fear memory. So, our study, revealing the effect of the swimming exercise on different stages of implicit memory of tone/foot shock conditioning, contributes to and complements the current knowledge about the environmental modulation of memory process. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

An investigation of a thermally steerable electroactive polymer/shape memory polymer hybrid actuator

NASA Astrophysics Data System (ADS)

Ren, Kailiang; Bortolin, Robert S.; Zhang, Q. M.

2016-02-01

This paper investigates the thermal response of a hybrid actuator composed of an electroactive polymer (EAP) and a shape memory polymer (SMP). This study introduces the concept of using the large strain from a phase transition (ferroelectric to paraelectric phase) induced by temperature change in a poly(vinylidene fluoride-trifluoroethylene) film to tune the shape of an SMP film above its glass transition temperature (Tg). Based on the material characterization data, it is revealed that the thickness ratio of the EAP/SMP films plays a critical role in the displacement of the actuator. Further, it is also demonstrated that the displacement of the hybrid actuator can be tailored by varying the temperature, and finite element method simulation results fit well with the measurement data. This specially designed hybrid actuator shows great promise for future morphing aircraft applications.

Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

NASA Astrophysics Data System (ADS)

You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

2018-02-01

In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

Low temperature nickel titanium iron shape memory alloys: Actuator engineering and investigation of deformation mechanisms using in situ neutron diffraction at Los Alamos National Laboratory

NASA Astrophysics Data System (ADS)

Krishnan, Vinu B.

Shape memory alloys are incorporated as actuator elements due to their inherent ability to sense a change in temperature and actuate against external loads by undergoing a shape change as a result of a temperature-induced phase transformation. The cubic so-called austenite to the trigonal so-called R-phase transformation in NiTiFe shape memory alloys offers a practical temperature range for actuator operation at low temperatures, as it exhibits a narrow temperature-hysteresis with a desirable fatigue response. Overall, this work is an investigation of selected science and engineering aspects of low temperature NiTiFe shape memory alloys. The scientific study was performed using in situ neutron diffraction measurements at the newly developed low temperature loading capability on the Spectrometer for Materials Research at Temperature and Stress (SMARTS) at Los Alamos National Laboratory and encompasses three aspects of the behavior of Ni46.8Ti50Fe3.2 at 92 K (the lowest steady state temperature attainable with the capability). First, in order to study deformation mechanisms in the R-phase in NiTiFe, measurements were performed at a constant temperature of 92 K under external loading. Second, with the objective of examining NiTiFe in one-time, high-stroke, actuator applications (such as in safety valves), a NiTiFe sample was strained to approximately 5% (the R-phase was transformed to B19' phase in the process) at 92 K and subsequently heated to full strain recovery under a load. Third, with the objective of examining NiTiFe in cyclic, low-stroke, actuator applications (such as in cryogenic thermal switches), a NiTiFe sample was strained to 1% at 92 K and subsequently heated to full strain recovery under load. Neutron diffraction spectra were recorded at selected time and stress intervals during these experiments. The spectra were subsequently used to obtain quantitative information related to the phase-specific strain, texture and phase fraction evolution using the Rietveld technique. The mechanical characterization of NiTiFe alloys using the cryogenic capability at SMARTS provided considerable insight into the mechanisms of phase transformation and twinning at cryogenic temperatures. Both mechanisms contribute to shape memory and pseudoelasticity phenomena. Three phases (R, B19' and B33 phases) were found to coexist at 92 K in the unloaded condition (nominal holding stress of 8 MPa). For the first time the elastic modulus of R-phase was reported from neutron diffraction experiments. Furthermore, for the first time a base-centered orthorhombic (B33) martensitic phase was identified experimentally in a NiTi-based shape memory alloy. The orthorhombic B33 phase has been theoretically predicted in NiTi from density function theory (DFT) calculations but hitherto has never been observed experimentally. The orthorhombic B33 phase was observed while observing shifting of a peak (identified to be {021}B33) between the {111}R and {100}B19' peaks in the diffraction spectra collected during loading. Given the existing ambiguity in the published literature as to whether the trigonal R-phase belongs to the P3 or P3¯ space groups, Rietveld analyses were separately carried out incorporating the symmetries associated with both space groups and the impact of this choice evaluated. The constrained recovery of the B19' phase to the R-phase recorded approximately 4% strain recovery between 150 K and 170 K, with half of that recovery occurring between 160 K and 162 K. Additionally, the aforementioned research methodology developed for Ni46.8Ti50Fe3.2 shape memory alloys was applied to experiments performed on a new high temperature Ni 29.5Ti50.5Pd20 shape memory alloys. The engineering aspect focused on the development of (i) a NiTiFe based thermal conduction switch that minimized the heat gradient across the shape memory actuator element, (ii) a NiTiFe based thermal conduction switch that incorporated the actuator element in the form of helical springs, and (iii) a NiTi based release mechanism. Patents are being filed for all the three shape memory actuators developed as a part of this work. This work was supported by grants from SRI, NASA (NAG3-2751) and NSF (CAREER DMR-0239512) to UCF. Additionally, this work benefited from the use of the Lujan Center at the Los Alamos Neutron Science Center, funded by the United States Department of Energy, Office of Basic Energy Sciences, under Contract No. W-7405-ENG-36.

Randomly displaced phase distribution design and its advantage in page-data recording of Fourier transform holograms.

PubMed

Emoto, Akira; Fukuda, Takashi

2013-02-20

For Fourier transform holography, an effective random phase distribution with randomly displaced phase segments is proposed for obtaining a smooth finite optical intensity distribution in the Fourier transform plane. Since unitary phase segments are randomly distributed in-plane, the blanks give various spatial frequency components to an image, and thus smooth the spectrum. Moreover, by randomly changing the phase segment size, spike generation from the unitary phase segment size in the spectrum can be reduced significantly. As a result, a smooth spectrum including sidebands can be formed at a relatively narrow extent. The proposed phase distribution sustains the primary functions of a random phase mask for holographic-data recording and reconstruction. Therefore, this distribution is expected to find applications in high-density holographic memory systems, replacing conventional random phase mask patterns.

Characterisation of melt spun Ni-Ti shape memory Ribbons' microstructure

NASA Astrophysics Data System (ADS)

Mehrabi, Kambiz; Brunčko, Mihael; Kneissl, Albert C.; Čolič, Miodrag; Stamenković, Dragoslav; Ferčec, Janko; Anžel, Ivan; Rudolf, Rebeka

2012-06-01

NiTi alloys are the most technologically important medical Shape Memory Alloys in a wide range of applications used in Orthopaedics, Neurology, Cardiology and interventional Radiology as guide-wires, self-expandable stents, stent grafts, inferior vena cava filters and clinical instruments. This paper discusses the use of rapid solidification by the melt spinning method for the preparation of thin NiTi ribbons for medical uses. Generally, the application of rapid solidification via melt-spinning can change the microstructure drastically, which improves ductility and shape memory characteristics and leads to samples with small dimensions. As the increase in the wheel speed led to a reduced ribbon thickness, the cooling rate increased and, therefore, the martensitic substructure became finer. Furthermore, no transition from the crystalline phase to the amorphous phase was obtained by increasing the cooling rate, even at a wheel speed of 30 m/s. Specimens for our metallographic investigation were cut from the longitudinal cross sections of melt-spun ribbons. Conventional TEM studies were carried out with an acceleration voltage of 120 kV. Additionally, the chemical composition of the samples was examined with a TEM equipped with an EDX analyser. The crystallographic structure was determined using Bragg-Brentano x-ray diffraction with Cu-Kα radiation at room temperature.

Optimisation of readout performance of phase-change probe memory in terms of capping layer and probe tip

NASA Astrophysics Data System (ADS)

Wang, Lei; Wright, C. David; Aziz, Mustafa. M.; Yang, Ci Hui; Yang, Guo Wei

2014-11-01

The capping layer and the probe tip that serve as the protective layer and the recording tool, respectively, for phase-change probe memory play an important role on the writing performance of phase-change probe memory, thus receiving considerable attention. On the other hand, their influence on the readout performance of phasechange probe memory has rarely been reported before. A three-dimensional parametric study based on the Laplace equation was therefore conducted to investigate the effect of the capping layer and the probe tip on the resulting reading contrast for the two cases of reading a crystalline bit from an amorphous matrix and reading an amorphous bit from a crystalline matrix. The results indicated that a capping layer with a thickness of 2 nm and an electrical conductivity of 50 Ω-1m-1 is able to provide an appropriate reading contrast for both the cases, while satisfying the previous writing requirement, particularly with the assistance of a platinum silicide probe tip.

Enhanced Memory Consolidation Via Automatic Sound Stimulation During Non-REM Sleep.

PubMed

Leminen, Miika M; Virkkala, Jussi; Saure, Emma; Paajanen, Teemu; Zee, Phyllis C; Santostasi, Giovanni; Hublin, Christer; Müller, Kiti; Porkka-Heiskanen, Tarja; Huotilainen, Minna; Paunio, Tiina

2017-03-01

Slow-wave sleep (SWS) slow waves and sleep spindle activity have been shown to be crucial for memory consolidation. Recently, memory consolidation has been causally facilitated in human participants via auditory stimuli phase-locked to SWS slow waves. Here, we aimed to develop a new acoustic stimulus protocol to facilitate learning and to validate it using different memory tasks. Most importantly, the stimulation setup was automated to be applicable for ambulatory home use. Fifteen healthy participants slept 3 nights in the laboratory. Learning was tested with 4 memory tasks (word pairs, serial finger tapping, picture recognition, and face-name association). Additional questionnaires addressed subjective sleep quality and overnight changes in mood. During the stimulus night, auditory stimuli were adjusted and targeted by an unsupervised algorithm to be phase-locked to the negative peak of slow waves in SWS. During the control night no sounds were presented. Results showed that the sound stimulation increased both slow wave (p = .002) and sleep spindle activity (p < .001). When overnight improvement of memory performance was compared between stimulus and control nights, we found a significant effect in word pair task but not in other memory tasks. The stimulation did not affect sleep structure or subjective sleep quality. We showed that the memory effect of the SWS-targeted individually triggered single-sound stimulation is specific to verbal associative memory. Moreover, the ambulatory and automated sound stimulus setup was promising and allows for a broad range of potential follow-up studies in the future. © Sleep Research Society 2017. Published by Oxford University Press [on behalf of the Sleep Research Society].

Neural Correlates of True and False Memory in Mild Cognitive Impairment

PubMed Central

Sweeney-Reed, Catherine M.; Riddell, Patricia M.; Ellis, Judi A.; Freeman, Jayne E.; Nasuto, Slawomir J.

2012-01-01

The goal of this research was to investigate the changes in neural processing in mild cognitive impairment. We measured phase synchrony, amplitudes, and event-related potentials in veridical and false memory to determine whether these differed in participants with mild cognitive impairment compared with typical, age-matched controls. Empirical mode decomposition phase locking analysis was used to assess synchrony, which is the first time this analysis technique has been applied in a complex cognitive task such as memory processing. The technique allowed assessment of changes in frontal and parietal cortex connectivity over time during a memory task, without a priori selection of frequency ranges, which has been shown previously to influence synchrony detection. Phase synchrony differed significantly in its timing and degree between participant groups in the theta and alpha frequency ranges. Timing differences suggested greater dependence on gist memory in the presence of mild cognitive impairment. The group with mild cognitive impairment had significantly more frontal theta phase locking than the controls in the absence of a significant behavioural difference in the task, providing new evidence for compensatory processing in the former group. Both groups showed greater frontal phase locking during false than true memory, suggesting increased searching when no actual memory trace was found. Significant inter-group differences in frontal alpha phase locking provided support for a role for lower and upper alpha oscillations in memory processing. Finally, fronto-parietal interaction was significantly reduced in the group with mild cognitive impairment, supporting the notion that mild cognitive impairment could represent an early stage in Alzheimer’s disease, which has been described as a ‘disconnection syndrome’. PMID:23118992

Understanding Phase-Change Memory Alloys from a Chemical Perspective

NASA Astrophysics Data System (ADS)

Kolobov, A. V.; Fons, P.; Tominaga, J.

2015-09-01

Phase-change memories (PCM) are associated with reversible ultra-fast low-energy crystal-to-amorphous switching in GeTe-based alloys co-existing with the high stability of the two phases at ambient temperature, a unique property that has been recently explained by the high fragility of the glass-forming liquid phase, where the activation barrier for crystallisation drastically increases as the temperature decreases from the glass-transition to room temperature. At the same time the atomistic dynamics of the phase-change process and the associated changes in the nature of bonding have remained unknown. In this work we demonstrate that key to this behavior is the formation of transient three-center bonds in the excited state that is enabled due to the presence of lone-pair electrons. Our findings additionally reveal previously ignored fundamental similarities between the mechanisms of reversible photoinduced structural changes in chalcogenide glasses and phase-change alloys and offer new insights into the development of efficient PCM materials.

Understanding Phase-Change Memory Alloys from a Chemical Perspective.

PubMed

Kolobov, A V; Fons, P; Tominaga, J

2015-09-01

Phase-change memories (PCM) are associated with reversible ultra-fast low-energy crystal-to-amorphous switching in GeTe-based alloys co-existing with the high stability of the two phases at ambient temperature, a unique property that has been recently explained by the high fragility of the glass-forming liquid phase, where the activation barrier for crystallisation drastically increases as the temperature decreases from the glass-transition to room temperature. At the same time the atomistic dynamics of the phase-change process and the associated changes in the nature of bonding have remained unknown. In this work we demonstrate that key to this behavior is the formation of transient three-center bonds in the excited state that is enabled due to the presence of lone-pair electrons. Our findings additionally reveal previously ignored fundamental similarities between the mechanisms of reversible photoinduced structural changes in chalcogenide glasses and phase-change alloys and offer new insights into the development of efficient PCM materials.

Phase-Change Memory Materials by Design: A Strain Engineering Approach.

PubMed

Zhou, Xilin; Kalikka, Janne; Ji, Xinglong; Wu, Liangcai; Song, Zhitang; Simpson, Robert E

2016-04-20

Van der Waals heterostructure superlattices of Sb2 Te1 and GeTe are strain-engineered to promote switchable atomic disordering, which is confined to the GeTe layer. Careful control of the strain in the structures presents a new degree of freedom to design the properties of functional superlattice structures for data storage and photonics applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

De, Arup

2014-01-01

Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interfacemore » (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.« less

Binary phase locked loops for Omega receivers

NASA Technical Reports Server (NTRS)

Chamberlin, K.

1974-01-01

An all-digital phase lock loop (PLL) is considered because of a number of problems inherent in an employment of analog PLL. The digital PLL design presented solves these problems. A single loop measures all eight Omega time slots. Memory-aiding leads to the name of this design, the memory-aided phase lock loop (MAPLL). Basic operating principles are discussed and the superiority of MAPLL over the conventional digital phase lock loop with regard to the operational efficiency for Omega applications is demonstrated.

Multi-range force sensors utilizing shape memory alloys

DOEpatents

Varma, Venugopal K.

2003-04-15

The present invention provides a multi-range force sensor comprising a load cell made of a shape memory alloy, a strain sensing system, a temperature modulating system, and a temperature monitoring system. The ability of the force sensor to measure contact forces in multiple ranges is effected by the change in temperature of the shape memory alloy. The heating and cooling system functions to place the shape memory alloy of the load cell in either a low temperature, low strength phase for measuring small contact forces, or a high temperature, high strength phase for measuring large contact forces. Once the load cell is in the desired phase, the strain sensing system is utilized to obtain the applied contact force. The temperature monitoring system is utilized to ensure that the shape memory alloy is in one phase or the other.

Deformation and Failure Mechanisms of Shape Memory Alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daly, Samantha Hayes

2015-04-15

The goal of this research was to understand the fundamental mechanics that drive the deformation and failure of shape memory alloys (SMAs). SMAs are difficult materials to characterize because of the complex phase transformations that give rise to their unique properties, including shape memory and superelasticity. These phase transformations occur across multiple length scales (one example being the martensite-austenite twinning that underlies macroscopic strain localization) and result in a large hysteresis. In order to optimize the use of this hysteretic behavior in energy storage and damping applications, we must first have a quantitative understanding of this transformation behavior. Prior resultsmore » on shape memory alloys have been largely qualitative (i.e., mapping phase transformations through cracked oxide coatings or surface morphology). The PI developed and utilized new approaches to provide a quantitative, full-field characterization of phase transformation, conducting a comprehensive suite of experiments across multiple length scales and tying these results to theoretical and computational analysis. The research funded by this award utilized new combinations of scanning electron microscopy, diffraction, digital image correlation, and custom testing equipment and procedures to study phase transformation processes at a wide range of length scales, with a focus at small length scales with spatial resolution on the order of 1 nanometer. These experiments probe the basic connections between length scales during phase transformation. In addition to the insights gained on the fundamental mechanisms driving transformations in shape memory alloys, the unique experimental methodologies developed under this award are applicable to a wide range of solid-to-solid phase transformations and other strain localization mechanisms.« less

Amorphous blue phase III polymer scaffold as a sub-millisecond switching electro-optical memory device

NASA Astrophysics Data System (ADS)

Gandhi, Sahil Sandesh; Kim, Min Su; Hwang, Jeoung-Yeon; Chien, Liang-Chy

2017-02-01

We demonstrate the application of the nanostructured scaffold of BPIII as a resuable EO device that retains the BPIII ordering and sub-millisecond EO switching characteristics, that is, "EO-memory" of the original BPIII even after removal of the cholesteric blue phase liquid crystal (LC) and subsequent refilling with different nematic LCs. We also fabricate scaffolds mimicking the isotropic phase and cubic blue phase I (BPI) to demonstrate the versatility of our material system to nano-engineer EO-memory scaffolds of various structures. We envisage that this work will promote new experimental investigations of the mysterious BPIII and the development of novel device architectures and optically functional nanomaterials.

Thermal and structural alternations in CuAlMnNi shape memory alloy by the effect of different pressure applications

NASA Astrophysics Data System (ADS)

Canbay, Canan Aksu; Polat, Tercan

2017-09-01

In this work the effects of the applied pressure on the characteristic transformation temperatures, the high temperature order-disorder phase transitions, the variation in diffraction peaks and the surface morphology of the CuAlMnNi shape memory alloy was investigated. The evolution of the transformation temperatures was studied by differential scanning calorimetry (DSC) with different heating and cooling rates. The differential thermal analysis measurements were performed to obtain the ordered-disordered phase transformations from room temperature to 900 °C. The characteristic transformation temperatures and the thermodynamic parameters were highly sensitive to variations in the applied pressure and also the applied pressure affected the thermodynamic parameters. The activation energy of the sample according to applied pressure values calculated by Kissinger method. The structural changes of the samples were studied by X-ray diffraction (XRD) measurements and by optical microscope observations at room temperature.

Si-Sb-Te materials for phase change memory applications.

PubMed

Rao, Feng; Song, Zhitang; Ren, Kun; Zhou, Xilin; Cheng, Yan; Wu, Liangcai; Liu, Bo

2011-04-08

Si-Sb-Te materials including Te-rich Si₂Sb₂Te₆ and Si(x)Sb₂Te₃ with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si(x)Sb₂Te₃ shows better thermal stability than Ge₂Sb₂Te₅ or Si₂Sb₂Te₆ in that Si(x)Sb₂Te₃ does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si(x)Sb₂Te₃ improves. The 10 years retention temperature for Si₃Sb₂Te₃ film is ~393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si(x)Sb₂Te₃ films also show improvement on thickness change upon annealing and adhesion on SiO₂ substrate compared to those of Ge₂Sb₂Te₅ or Si₂Sb₂Te₆ films. However, the electrical performance of PCRAM cells based on Si(x)Sb₂Te₃ films with x > 3.5 becomes worse in terms of stable and long-term operations. Si(x)Sb₂Te₃ materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

Projected phase-change memory devices.

PubMed

Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

2015-09-03

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

Dynamics of Hippocampal Protein Expression During Long-term Spatial Memory Formation*

PubMed Central

Borovok, Natalia; Nesher, Elimelech; Levin, Yishai; Reichenstein, Michal; Pinhasov, Albert

2016-01-01

Spatial memory depends on the hippocampus, which is particularly vulnerable to aging. This vulnerability has implications for the impairment of navigation capacities in older people, who may show a marked drop in performance of spatial tasks with advancing age. Contemporary understanding of long-term memory formation relies on molecular mechanisms underlying long-term synaptic plasticity. With memory acquisition, activity-dependent changes occurring in synapses initiate multiple signal transduction pathways enhancing protein turnover. This enhancement facilitates de novo synthesis of plasticity related proteins, crucial factors for establishing persistent long-term synaptic plasticity and forming memory engrams. Extensive studies have been performed to elucidate molecular mechanisms of memory traces formation; however, the identity of plasticity related proteins is still evasive. In this study, we investigated protein turnover in mouse hippocampus during long-term spatial memory formation using the reference memory version of radial arm maze (RAM) paradigm. We identified 1592 proteins, which exhibited a complex picture of expression changes during spatial memory formation. Variable linear decomposition reduced significantly data dimensionality and enriched three principal factors responsible for variance of memory-related protein levels at (1) the initial phase of memory acquisition (165 proteins), (2) during the steep learning improvement (148 proteins), and (3) the final phase of the learning curve (123 proteins). Gene ontology and signaling pathways analysis revealed a clear correlation between memory improvement and learning phase-curbed expression profiles of proteins belonging to specific functional categories. We found differential enrichment of (1) neurotrophic factors signaling pathways, proteins regulating synaptic transmission, and actin microfilament during the first day of the learning curve; (2) transcription and translation machinery, protein trafficking, enhancement of metabolic activity, and Wnt signaling pathway during the steep phase of memory formation; and (3) cytoskeleton organization proteins. Taken together, this study clearly demonstrates dynamic assembly and disassembly of protein-protein interaction networks depending on the stage of memory formation engrams. PMID:26598641

Physical principles and current status of emerging non-volatile solid state memories

NASA Astrophysics Data System (ADS)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance. [Figure not available: see fulltext.

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sherchenkov, A. A.; Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru; Lazarenko, P. I.

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shiftmore » along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.« less

Fast-Responding Bio-Based Shape Memory Thermoplastic Polyurethanes.

PubMed

Petrović, Zoran S; Milić, Jelena; Zhang, Fan; Ilavsky, Jan

2017-07-14

Novel fast response shape-memory polyurethanes were prepared from bio-based polyols, diphenyl methane diisocyanate and butane diol for the first time. The bio-based polyester polyols were synthesized from 9-hydroxynonanoic acid, a product obtained by ozonolysis of fatty acids extracted from soy oil and castor oil. The morphology of polyurethanes was investigated by synchrotron ultra-small angle X-ray scattering, which revealed the inter-domain spacing between the hard and soft phases, the degree of phase separation, and the level of intermixing between the hard and soft phases. We also conducted thorough investigations of the thermal, mechanical, and dielectric properties of the polyurethanes, and found that high crystallization rate of the soft segment gives these polyurethanes unique properties suitable for shape-memory applications, such as adjustable transition temperatures, high degree of elastic elongations, and good mechanical strength. These materials are also potentially biodegradable and biocompatible, therefore suitable for biomedical and environmental applications.

Shape memory alloys: metallurgy, biocompatibility, and biomechanics for neurosurgical applications.

PubMed

Hoh, Daniel J; Hoh, Brian L; Amar, Arun P; Wang, Michael Y

2009-05-01

SHAPE MEMORY ALLOYS possess distinct dynamic properties with particular applications in neurosurgery. Because of their unique physical characteristics, these materials are finding increasing application where resiliency, conformation, and actuation are needed. Nitinol, the most frequently manufactured shape memory alloy, responds to thermal and mechanical stimuli with remarkable mechanical properties such as shape memory effect, super-elasticity, and high damping capacity. Nitinol has found particular use in the biomedical community because of its excellent fatigue resistance and biocompatibility, with special interest in neurosurgical applications. The properties of nitinol and its diffusionless phase transformations contribute to these unique mechanical capabilities. The features of nitinol, particularly its shape memory effect, super-elasticity, damping capacity, as well as its biocompatibility and biomechanics are discussed herein. Current and future applications of nitinol and other shape memory alloys in endovascular, spinal, and minimally invasive neurosurgery are introduced. An understanding of the metallurgic properties of nitinol provides a foundation for further exploration of its use in neurosurgical implant design.

Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

NASA Astrophysics Data System (ADS)

Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H.; Kühne, Thomas D.; Bernasconi, Marco

2016-05-01

We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds.

PubMed

Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H; Kühne, Thomas D; Bernasconi, Marco

2016-05-28

We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

Anomalous Phase Change in [(GeTe)2/(Sb2Te3)]20 Superlattice Observed by Coherent Phonon Spectroscopy

NASA Astrophysics Data System (ADS)

Makino, K.; Saito, Y.; Mitrofanov, K.; Tominaga, J.; Kolobov, A. V.; Nakano, T.; Fons, P.; Hase, M.

The temperature-dependent ultrafast coherent phonon dynamics of topological (GeTe)2/(Sb2Te3) super lattice phase change memory material was investigated. By comparing with Ge-Sb-Te alloy, a clear contrast suggesting the unique phase change behavior was found.

Effect of in vitro degradation of poly(D,L-lactide)/beta-tricalcium composite on its shape-memory properties.

PubMed

Zheng, Xiaotong; Zhou, Shaobing; Yu, Xiongjun; Li, Xiaohong; Feng, Bo; Qu, Shuxin; Weng, Jie

2008-07-01

The in vitro degradation characteristic and shape-memory properties of poly(D,L-lactide) (PDLLA)/beta-tricalcium phosphate (beta-TCP) composites were investigated because of their wide application in biomedical fields. In this article, PDLLA and crystalline beta-TCP were compounded and interesting shape-memory behaviors of the composite were first investigated. Then, in vitro degradation of the PDLLA/beta-TCP composites with weight ratios of 1:1, 2:1, and 3:1 was performed in phosphate buffer saline solution (PBS) (154 mM, pH 7.4) at 37 degrees C. The effect of in vitro degradation time for PDLLA/beta-TCP composites on shape-memory properties was studied by scanning electron microscopy, differential scanning calorimetry, gel permeation chromatography, X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). The changes of structural morphology, glass transition temperature (T(g)), molecular weight, and weight loss of composites matrix and pH change of degradation medium indicated that shape-memory effects at different degradation time were nonlinearly influenced because of the breaking down of polymer chain and the formation of degradation products. Furthermore, the results from XRD and FTIR implied that the degradation products, for example, hydroxyapatite (HA), calcium hydrogen phosphate (CaHPO(4)), and calcium pyrophosphate (Ca(2)P(2)O(7)) phases also had some effects on shape-memory properties during the degradation. 2007 Wiley Periodicals, Inc.

Self-healing bolted joint employing a shape memory actuator

NASA Astrophysics Data System (ADS)

Muntges, Daniel E.; Park, Gyuhae; Inman, Daniel J.

2001-08-01

This paper is a report of an initial investigation into the active control of preload in the joint using a shape memory actuator around the axis of the bolt shaft. Specifically, the actuator is a cylindrical Nitinol washer that expands axially when heated, according to the shape memory effect. The washer is actuated in response to an artificial decrease in torque. Upon actuation, the stress generated by its axial strain compresses the bolted members and creates a frictional force that has the effect of generating a preload and restoring lost torque. In addition to torque wrenches, the system in question was monitored in all stages of testing using piezoelectric impedance analysis. Impedance analysis drew upon research techniques developed at Center for Intelligent Material Systems and Structures, in which phase changes in the impedance of a self-sensing piezoceramic actuator correspond to changes in joint stiffness. Through experimentation, we have documented a successful actuation of the shape memory element. Due to complexity of constitutive modeling, qualitative analysis by the impedance method is used to illustrate the success. Additional considerations encountered in this initial investigation are made to guide further thorough research required for the successful commercial application of this promising technique.

Characterization and application of Shape Memory Alloy wires for micro and meso positioning systems

NASA Astrophysics Data System (ADS)

Khan, Afzal

The properties of Shape Memory Alloy (SMA) wires are determined by experimentation, and previously used experimental equipment contributes to measurement errors in data. In this study, various characterization experiments are designed and carried out using a precision characterization instrument for shape memory alloy wires to determine the properties and parameters of the alloy. These experiments demonstrate the behavior of SMA wires under different thermal and loading conditions as they occur in actuation applications. As SMA wires go through phase transformation, a significant amount of contraction force is produced. This actuation force has been used in bias spring actuators and differential actuators. In this dissertation, the force generated during the twinning of martensite is used to actuate positioning systems with small displacements at the micrometer level. A micropositioning system is designed and tested that has a positioning accuracy of about +/-0.15 mum. A relation between the current input and the displacement output is determined for the specific preload. The transformation force generated during the phase change from martensite to austenite is used as an actuation force for a second positioning system that uses linear bearing with a displacement range of about a millimeter. This positioning system actuated with a single nitinol wire and guided by symmetric parallel diaphragm flexures, was designed and tested. The actuation is repeatable to about +/-15 mum with variation of about +/-5 mum in postion at steady temperature.

Memory for environmental sounds in sighted, congenitally blind and late blind adults: evidence for cross-modal compensation.

PubMed

Röder, Brigitte; Rösler, Frank

2003-10-01

Several recent reports suggest compensatory performance changes in blind individuals. It has, however, been argued that the lack of visual input leads to impoverished semantic networks resulting in the use of data-driven rather than conceptual encoding strategies on memory tasks. To test this hypothesis, congenitally blind and sighted participants encoded environmental sounds either physically or semantically. In the recognition phase, both conceptually as well as physically distinct and physically distinct but conceptually highly related lures were intermixed with the environmental sounds encountered during study. Participants indicated whether or not they had heard a sound in the study phase. Congenitally blind adults showed elevated memory both after physical and semantic encoding. After physical encoding blind participants had lower false memory rates than sighted participants, whereas the false memory rates of sighted and blind participants did not differ after semantic encoding. In order to address the question if compensatory changes in memory skills are restricted to critical periods during early childhood, late blind adults were tested with the same paradigm. When matched for age, they showed similarly high memory scores as the congenitally blind. These results demonstrate compensatory performance changes in long-term memory functions due to the loss of a sensory system and provide evidence for high adaptive capabilities of the human cognitive system.

Thermomechanical behavior of shape memory elastomeric composites

NASA Astrophysics Data System (ADS)

Ge, Qi; Luo, Xiaofan; Rodriguez, Erika D.; Zhang, Xiao; Mather, Patrick T.; Dunn, Martin L.; Qi, H. Jerry

2012-01-01

Shape memory polymers (SMPs) can fix a temporary shape and recover their permanent shape in response to environmental stimuli such as heat, electricity, or irradiation. Most thermally activated SMPs use the macromolecular chain mobility change around the glass transition temperature ( Tg) to achieve the shape memory (SM) effects. During this process, the stiffness of the material typically changes by three orders of magnitude. Recently, a composite materials approach was developed to achieve thermally activated shape memory effect where the material exhibits elastomeric response in both the temporary and the recovered configurations. These shape memory elastomeric composites (SMECs) consist of an elastomeric matrix reinforced by a semicrystalline polymer fiber network. The matrix provides background rubber elasticity while the fiber network can transform between solid crystals and melt phases over the operative temperature range. As such it serves as a reversible "switching phase" that enables shape fixing and recovery. Shape memory elastomeric composites provide a new paradigm for the development of a wide array of active polymer composites that utilize the melt-crystal transition to achieve the shape memory effect. This potentially allows for material systems with much simpler chemistries than most shape memory polymers and thus can facilitate more rapid material development and insertion. It is therefore important to understand the thermomechanical behavior and to develop corresponding material models. In this paper, a 3D finite-deformation constitutive modeling framework was developed to describe the thermomechanical behavior of SMEC. The model is phenomenological, although inspired by micromechanical considerations of load transfer between the matrix and fiber phases of a composite system. It treats the matrix as an elastomer and the fibers as a complex solid that itself is an aggregate of melt and crystal phases that evolve from one to the other during a temperature change. As such, the composite consists of an elastomer reinforced by a soft liquid at high temperature and a stiff solid at low temperature. The model includes a kinetic description of the non-isothermal crystallization and melting of the fibers during a temperature change. As the fibers transform from melt to crystal during cooling it is assumed that new crystals are formed in an undeformed state, which requires careful tracking of the kinematics of the evolving phases which comes at a significant computational cost. In order to improve the computational efficiency, an effective phase model (EPM) is adopted to treat the evolving crystal phases as an effective medium. A suite of careful thermomechanical experiments with a SMEC was carried out to calibrate various model parameters, and then to demonstrate the ability of the model to accurately capture the shape memory behavior of the SMEC system during complex thermomechanical loading scenarios. The model also identifies the effects of microstructural design parameters such as the fiber volume fraction.

Changes in heart rate variability are associated with expression of short-term and long-term contextual and cued fear memories.

PubMed

Liu, Jun; Wei, Wei; Kuang, Hui; Zhao, Fang; Tsien, Joe Z

2013-01-01

Heart physiology is a highly useful indicator for measuring not only physical states, but also emotional changes in animals. Yet changes of heart rate variability during fear conditioning have not been systematically studied in mice. Here, we investigated changes in heart rate and heart rate variability in both short-term and long-term contextual and cued fear conditioning. We found that while fear conditioning could increase heart rate, the most significant change was the reduction in heart rate variability which could be further divided into two distinct stages: a highly rhythmic phase (stage-I) and a more variable phase (stage-II). We showed that the time duration of the stage-I rhythmic phase were sensitive enough to reflect the transition from short-term to long-term fear memories. Moreover, it could also detect fear extinction effect during the repeated tone recall. These results suggest that heart rate variability is a valuable physiological indicator for sensitively measuring the consolidation and expression of fear memories in mice.

Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

NASA Astrophysics Data System (ADS)

Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Cheng, Yan; Peng, Cheng; Yao, Dongning; Song, Sannian; Liu, Bo; Feng, Songlin; Chen, Bomy

2011-07-01

The phase change memory with monolayer chalcogenide film (Si18Sb52Te30) is investigated for the feasibility of multilevel data storage. During the annealing of the film, a relatively stable intermediate resistance can be obtained at an appropriate heating rate. The transmission electron microscopy in situ analysis reveals a conversion of crystallization mechanism from nucleation to crystal growth, which leads a continuous reduction in the degree of disorder. It is indicated from the electrical properties of the devices that the fall edge of the voltage pulse is the critical factor that determines a reliable triple-level resistance state of the phase change memory cell.

Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui

Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr{sub 10}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 90} (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 ordersmore » of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention.« less

Sex and menstrual cycle phase at encoding influence emotional memory for gist and detail

PubMed Central

Nielsen, Shawn E.; Ahmed, Imran; Cahill, Larry

2013-01-01

Sex influences on emotional memory have received increasing interest over the past decade. However, only a subset of this previous work explored the influence of sex on memory for central information (gist) and peripheral detail in emotional versus neutral contexts. Here we examined the influence of sex and menstrual cycle phase at encoding on memory for either an emotional or neutral story, specifically with respect to the retention of gist and peripheral detail. Healthy naturally cycling women and men viewed a brief, narrated, three-phase story containing neutral or emotionally arousing elements. One week later, participants received a surprise free recall test for story elements. The results indicate that naturally cycling women in the luteal (high hormone) phase of the menstrual cycle at encoding show enhanced memory for peripheral details, but not gist, when in the emotional compared with neutral stories (p<.05). In contrast, naturally cycling women in the follicular (low hormone) phase of the menstrual cycle at encoding did not show enhanced memory for gist or peripheral details in the emotional compared with neutral stories. Men show enhanced memory for gist, but not peripheral details, in the emotional versus neutral stories (p<.05). In addition, these sex influences on memory cannot be attributed to differences in attention or arousal; luteal women, follicular women, and men performed similarly on measures of attention (fixation time percentage) and arousal (pupil diameter changes) during the most arousing phase of the emotional story. These findings suggest that sex and menstrual cycle phase at encoding influence long term memory for different types of emotional information. PMID:23891713

Signal and noise extraction from analog memory elements for neuromorphic computing.

PubMed

Gong, N; Idé, T; Kim, S; Boybat, I; Sebastian, A; Narayanan, V; Ando, T

2018-05-29

Dense crossbar arrays of non-volatile memory (NVM) can potentially enable massively parallel and highly energy-efficient neuromorphic computing systems. The key requirements for the NVM elements are continuous (analog-like) conductance tuning capability and switching symmetry with acceptable noise levels. However, most NVM devices show non-linear and asymmetric switching behaviors. Such non-linear behaviors render separation of signal and noise extremely difficult with conventional characterization techniques. In this study, we establish a practical methodology based on Gaussian process regression to address this issue. The methodology is agnostic to switching mechanisms and applicable to various NVM devices. We show tradeoff between switching symmetry and signal-to-noise ratio for HfO 2 -based resistive random access memory. Then, we characterize 1000 phase-change memory devices based on Ge 2 Sb 2 Te 5 and separate total variability into device-to-device variability and inherent randomness from individual devices. These results highlight the usefulness of our methodology to realize ideal NVM devices for neuromorphic computing.

FOREWORD: Shape Memory and Related Technologies

NASA Astrophysics Data System (ADS)

Liu, Yong

2005-10-01

The International Symposium on Shape Memory and Related Technologies (SMART2004) successfully took place in Singapore from November 24 to 26, 2004. SMART2004 aimed to provide a forum for presenting and discussing recent developments in the processing, characterization, application and performance prediction of shape memory materials, particularly shape memory alloys and magnetic shape memory materials. In recent years, we have seen a surge in the research and application of shape memory materials. This is due on the one hand to the successful applications of shape memory alloys (SMAs), particularly NiTi (nitinol), in medical practices and, on the other hand, to the discovery of magnetic shape memory (MSM) materials (or, ferromagnetic shape memory alloys, FSMAs). In recent years, applications of SMAs in various engineering practices have flourished owing to the unique combination of novel properties including high power density related to shape recovery, superelasticity with tunable hysteresis, high damping capacity combined with good fatigue resistance, excellent wear resistance due to unconventional deformation mechanisms (stress-induced phase transformation and martensite reorientation), and excellent biocompatibility and anticorrosion resistance, etc. In~the case of MSMs (or FSMAs), their giant shape change in a relatively low magnetic field has great potential to supplement the traditional actuation mechanisms and to have a great impact on the world of modern technology. Common mechanisms existing in both types of materials, namely thermoelastic phase transformation, martensite domain switching and their controlling factors, are of particular interest to the scientific community. Despite some successful applications, some fundamental issues remain unsatisfactorily understood. This conference hoped to link the fundamental research to engineering practices, and to further identify remaining problems in order to further promote the applications of shape memory materials in various demanding fields. Some top researchers from Asia, Australia, Europe and USA attended the meeting and gave oral presentations on both the fundamentals and applied aspects of SMAs and MSMs. Several prominent experts have delivered invited talks on the damping capacity of SMAs (J Van Humbeeck), SMA thin films (S Miyazaki), MSMs (V Lindross and O Söderberg) and SMA microtubes (Q P Sun). At the end of the Symposium, a panel discussion on various aspects of shape memory materials was held in the Nanyang Technological University. Comments, suggestions, opinions, discussions etc from all participants are greatly appreciated and acknowledged. I would like to thank all the participants for their valuable contributions toward the success of SMART2004, and thank all the session chairpersons for making this Symposium an event full of beneficial discussions. This special issue includes some of the manuscripts submitted to SMART2004. I want to express my deep gratitude to the editorial office of the journal of Smart Materials and Structures and all the referees for their great help in producing this special issue. This symposium has received support from the Institute of Materials (East Asia) and the School of Mechanical and Aerospace Engineering of the Nanyang Technological University. The following sponsors are gratefully acknowledged: Lee Foundation (Singapore) Accelrys Instron (Singapore Pte Ltd).

Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

NASA Astrophysics Data System (ADS)

Rizzi, M.; Spessot, A.; Fantini, P.; Ielmini, D.

2011-11-01

In a phase change memory (PCM), the device resistance increases slowly with time after the formation of the amorphous phase, thus affecting the stability of stored data. This work investigates the resistance drift in thin films of amorphous Ge2Sb2Te5 and in PCMs, demonstrating a common kinetic of drift in stressed/unstressed films and in the nanometer-size active volume of a PCM with different stress levels developed via stressor layers. It is concluded that stress is not the root cause of PCM drift, which is instead attributed to intrinsic structural relaxation due to the disordered, metastable nature of the amorphous chalcogenide phase.

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

PubMed

Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

2016-04-01

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge 4SbTe 5

DOE PAGES

Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; ...

2015-05-15

Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe) 1-x(Sb 2Te 3) x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge 4SbTe 5, a single phase compound just off of the (GeTe) 1-x(Sb 2Te 3) xmore » tie-line, that forms in a stable rocksalt crystal structure at room temperature. We find that stoichiometric and undoped Ge 4SbTe 5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.« less

Probing Phase Transformations and Microstructural Evolutions at the Small Scales: Synchrotron X-ray Microdiffraction for Advanced Applications in [Phase 3 Memory,] 3D IC (Integrated Circuits) and Solar PV (Photovoltaic) Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radchenko, I.; Tippabhotla, S. K.; Tamura, N.

2016-10-21

Synchrotron x-ray microdiffraction (μXRD) allows characterization of a crystalline material in small, localized volumes. Phase composition, crystal orientation and strain can all be probed in few-second time scales. Crystalline changes over a large areas can be also probed in a reasonable amount of time with submicron spatial resolution. However, despite all the listed capabilities, μXRD is mostly used to study pure materials but its application in actual device characterization is rather limited. This article will explore the recent developments of the μXRD technique illustrated with its advanced applications in microelectronic devices and solar photovoltaic systems. Application of μXRD in microelectronicsmore » will be illustrated by studying stress and microstructure evolution in Cu TSV (through silicon via) during and after annealing. Here, the approach allowing study of the microstructural evolution in the solder joint of crystalline Si solar cells due to thermal cycling will be also demonstrated.« less

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

NASA Astrophysics Data System (ADS)

Liu, Guangyu; Wu, Liangcai; Song, Zhitang; Liu, Yan; Li, Tao; Zhang, Sifan; Song, Sannian; Feng, Songlin

2017-12-01

A memory cell composed of a selector device and a storage device is the basic unit of phase change memory. The threshold switching effect, main principle of selectors, is a universal phenomenon in chalcogenide glasses. In this work, we put forward a safe and controllable method to prepare a SiGeAsTeN chalcogenide film by implanting As ions into sputtered SiGeTeN films. For the SiGeAsTeN material, the phase structure maintains the amorphous state, even at high temperature, indicating that no phase transition occurs for this chalcogenide-based material. The electrical test results show that the SiGeAsTeN-based devices exhibit good threshold switching characteristics and the switching voltage decreases with the increasing As content. The decrease in valence alternation pairs, reducing trap state density, may be the physical mechanism for lower switch-on voltage, which makes the SiGeAsTeN material more applicable in selector devices through component optimization.

Liking and Memory for Musical Stimuli as a Function of Exposure

ERIC Educational Resources Information Center

Szpunar, Karl K.; Schellenberg, E. Glenn; Pliner, Patricia

2004-01-01

Three experiments examined changes in liking and memory for music as a function of number of previous exposures, the ecological validity of the music, and whether the exposure phase required focused or incidental listening. After incidental listening, liking ratings were higher for music heard more often in the exposure phase and this association…

Investigations on the electronic, structural, magnetic properties related to shape-memory behavior in Ti{sub 2}CoX (X=Al, Ga, In)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Xiao-Ping, E-mail: weixp2008@gmail.com; Chu, Yan-Dong; Sun, Xiao-Wei

2015-02-15

Highlights: • The analysis of phase stability trend is studied for Ti{sub 2}CoX(X = Al, Ga, In). • Ti{sub 2}CoGa is more suitable as shape memory alloy. • Total magnetic moments disappear with a increase of c/a ratio for all systems. • Density of states at the Fermi level are also shown. - Abstract: Using the full-potential local orbital minimum-basis method, we have performed a systematic investigations on the electronic, structural, and magnetic properties related to shape memory applications for Ti{sub 2}CoX (X=Al, Ga, In) alloys. Our results confirm that these alloys are half-metallic ferromagnets with total magnetic moment ofmore » 2μ{sub B} per formula unit in austenite phase, and undergo a martensitic transformation at low temperatures. The relative stabilities of the martensitic phases differ considerably between Ti{sub 2}CoX (X=Al, Ga, In). Details of the electronic structures suggest that the differences in hybridizations between the magnetic components are responsible for trends of phase. Quantitative estimates for the energetics and the magnetizations indicate that Ti{sub 2}CoGa is a promising candidate for shape memory applications.« less

Superconductivity in multiple phases of compressed GeS b2T e4

NASA Astrophysics Data System (ADS)

Greenberg, E.; Hen, B.; Layek, Samar; Pozin, I.; Friedman, R.; Shelukhin, V.; Rosenberg, Y.; Karpovski, M.; Pasternak, M. P.; Sterer, E.; Dagan, Y.; Rozenberg, G. Kh.; Palevski, A.

2017-02-01

Here we report the discovery of superconductivity in multiple phases of the compressed GeS b2T e4 (GST) phase change memory alloy, which has attracted considerable attention for the last decade due to its unusual physical properties with many potential applications. Superconductivity is observed through electrical transport measurements, both for the amorphous (a -GST) and for the crystalline (c -GST) phases. The superconducting critical temperature Tc continuously increases with applied pressure, reaching a maximum Tc=6 K at P =20 GPa for a -GST, whereas the critical temperature of the cubic phase reaches a maximum Tc=8 K at 30 GPa. This material system, exhibiting a superconductor-insulator quantum phase transition, has an advantage over disordered metals since it has a continuous control of the crystal structure and the electronic properties using pressure as an external stimulus.

Time-domain separation of optical properties from structural transitions in resonantly bonded materials.

PubMed

Waldecker, Lutz; Miller, Timothy A; Rudé, Miquel; Bertoni, Roman; Osmond, Johann; Pruneri, Valerio; Simpson, Robert E; Ernstorfer, Ralph; Wall, Simon

2015-10-01

The extreme electro-optical contrast between crystalline and amorphous states in phase-change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise owing to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase-change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 fs owing to a rapid depletion of electrons from resonantly bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2-ps time constant. The optical changes are an order of magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

On-chip phase-change photonic memory and computing

NASA Astrophysics Data System (ADS)

Cheng, Zengguang; Ríos, Carlos; Youngblood, Nathan; Wright, C. David; Pernice, Wolfram H. P.; Bhaskaran, Harish

2017-08-01

The use of photonics in computing is a hot topic of interest, driven by the need for ever-increasing speed along with reduced power consumption. In existing computing architectures, photonic data storage would dramatically improve the performance by reducing latencies associated with electrical memories. At the same time, the rise of `big data' and `deep learning' is driving the quest for non-von Neumann and brain-inspired computing paradigms. To succeed in both aspects, we have demonstrated non-volatile multi-level photonic memory avoiding the von Neumann bottleneck in the existing computing paradigm and a photonic synapse resembling the biological synapses for brain-inspired computing using phase-change materials (Ge2Sb2Te5).

Epigenetic mechanisms of memory formation and reconsolidation.

PubMed

Jarome, Timothy J; Lubin, Farah D

2014-11-01

Memory consolidation involves transcriptional control of genes in neurons to stabilize a newly formed memory. Following retrieval, a once consolidated memory destabilizes and again requires gene transcription changes in order to restabilize, a process referred to as reconsolidation. Understanding the molecular mechanisms of gene transcription during the consolidation and reconsolidation processes could provide crucial insights into normal memory formation and memory dysfunction associated with psychiatric disorders. In the past decade, modifications of epigenetic markers such as DNA methylation and posttranslational modifications of histone proteins have emerged as critical transcriptional regulators of gene expression during initial memory formation and after retrieval. In light of the rapidly growing literature in this exciting area of research, we here examine the most recent and latest evidence demonstrating how memory acquisition and retrieval trigger epigenetic changes during the consolidation and reconsolidation phases to impact behavior. In particular we focus on the reconsolidation process, where we discuss the already identified epigenetic regulators of gene transcription during memory reconsolidation, while exploring other potential epigenetic modifications that may also be involved, and expand on how these epigenetic modifications may be precisely and temporally controlled by important signaling cascades critical to the reconsolidation process. Finally, we explore the possibility that epigenetic mechanisms may serve to regulate a system or circuit level reconsolidation process and may be involved in retrieval-dependent memory updating. Hence, we propose that epigenetic mechanisms coordinate changes in neuronal gene transcription, not only during the initial memory consolidation phase, but are triggered by retrieval to regulate molecular and cellular processes during memory reconsolidation. Copyright © 2014 Elsevier Inc. All rights reserved.

Epigenetic Mechanisms of Memory Formation and Reconsolidation

PubMed Central

Jarome, Timothy J.; Lubin, Farah D.

2014-01-01

Memory consolidation involves transcriptional control of genes in neurons to stabilize a newly formed memory. Following retrieval, a once consolidated memory destabilizes and again requires gene transcription changes in order to restabilize, a process referred to as reconsolidation. Understanding the molecular mechanisms of gene transcription during the consolidation and reconsolidation processes could provide crucial insights into normal memory formation and memory dysfunction associated with psychiatric disorders. In the past decade, modifications of epigenetic markers such as DNA methylation and posttranslational modifications of histone proteins have emerged as critical transcriptional regulators of gene expression during initial memory formation and after retrieval. In light of the rapidly growing literature in this exciting area of research, we here examine the most recent and latest evidence demonstrating how memory acquisition and retrieval trigger epigenetic changes during the consolidation and reconsolidation phases to impact behavior. In particular we focus on the reconsolidation process, where we discuss the already identified epigenetic regulators of gene transcription during memory reconsolidation, while exploring other potential epigenetic modifications that may also be involved, and expand on how these epigenetic modifications may be precisely and temporally controlled by important signaling cascades critical to the reconsolidation process. Finally, we explore the possibility that epigenetic mechanisms may serve to regulate a system or circuit level reconsolidation process and may be involved in retrieval-dependent memory updating. Hence, we propose that epigenetic mechanisms coordinate changes in neuronal gene transcription, not only during the initial memory consolidation phase, but are triggered by retrieval to regulate molecular and cellular processes during memory reconsolidation. PMID:25130533

Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

NASA Astrophysics Data System (ADS)

Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

2016-07-01

Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

Plastic Deformation and Failure Analysis of Phase Change Random Access Memory

NASA Astrophysics Data System (ADS)

Yang; Hongxin; Shi; Luping; Lee; Koon, Hock; Zhao; Rong; Li; Jianming; Lim; Guan, Kian; Chong; Chong, Tow

2009-04-01

Although lateral phase change random access memory (PCRAM) has attracted a lot of interest due to its simpler fabrication process and lower current compared to ovonic unified memory (OUM), it faces a problem of poor lifetime. This paper studied relation between plastic deformation and the failure of PCRAM through both experiment and simulation. OUM and lateral PCRAM incorporating Ge2Sb2Te5 were fabricated and tested. The overwriting test showed that lifetime of OUM exceeded 106 while that of lateral PCRAM was only about 100. Using atomic force microscopy (AFM), it was found that the plastic deformation after 106 overwriting reached several tens of nm for lateral PCRAM while it was negligible for OUM. The thermo-mechanical simulation results confirmed the similar results on larger plastic deformation of lateral PCRAM than that of OUM during overwriting. As plastic deformation involves of atomic bonds breaking and reforming in phase change material, the plastic deformation may be one main reason for the failure of lateral PCRAM.

Resistive switching characteristics of interfacial phase-change memory at elevated temperature

NASA Astrophysics Data System (ADS)

Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji

2018-04-01

Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 °C to a low-resistance (SET) state, which differs by ˜400 Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

Exploiting NiTi shape memory alloy films in design of tunable high frequency microcantilever resonators

NASA Astrophysics Data System (ADS)

Stachiv, I.; Sittner, P.; Olejnicek, J.; Landa, M.; Heller, L.

2017-11-01

Shape memory alloy (SMA) films are very attractive materials for microactuators because of their high energy density. However, all currently developed SMA actuators utilize martensitic transformation activated by periodically generated heating and cooling; therefore, they have a slow actuation speed, just a few Hz, which restricts their use in most of the nanotechnology applications such as high frequency microcantilever based physical and chemical sensors, atomic force microscopes, or RF filters. Here, we design tunable high frequency SMA microcantilevers for nanotechnology applications. They consist of a phase transforming NiTi SMA film sputtered on the common elastic substrate material; in our case, it is a single-crystal silicon. The reversible tuning of microcantilever resonant frequencies is then realized by intentionally changing the Young's modulus and the interlayer stress of the NiTi film by temperature, while the elastic substrate guarantees the high frequency actuation (up to hundreds of kHz) of the microcantilever. The experimental results qualitatively agree with predictions obtained from the dedicated model based on the continuum mechanics theory and a phase characteristic of NiTi. The present design of SMA microcantilevers expands the capability of current micro-/nanomechanical resonators by enabling tunability of several consecutive resonant frequencies.

Pupil size reflects successful encoding and recall of memory in humans.

PubMed

Kucewicz, Michal T; Dolezal, Jaromir; Kremen, Vaclav; Berry, Brent M; Miller, Laura R; Magee, Abigail L; Fabian, Vratislav; Worrell, Gregory A

2018-03-21

Pupil responses are known to indicate brain processes involved in perception, attention and decision-making. They can provide an accessible biomarker of human memory performance and cognitive states in general. Here we investigated changes in the pupil size during encoding and recall of word lists. Consistent patterns in the pupil response were found across and within distinct phases of the free recall task. The pupil was most constricted in the initial fixation phase and was gradually more dilated through the subsequent encoding, distractor and recall phases of the task, as the word items were maintained in memory. Within the final recall phase, retrieving memory for individual words was associated with pupil dilation in absence of visual stimulation. Words that were successfully recalled showed significant differences in pupil response during their encoding compared to those that were forgotten - the pupil was more constricted before and more dilated after the onset of word presentation. Our results suggest pupil size as a potential biomarker for probing and modulation of memory processing.

My Experience with Ti-Ni-Based and Ti-Based Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Miyazaki, Shuichi

2017-12-01

The present author has been studying shape memory alloys including Cu-Al-Ni, Ti-Ni-based, and Ni-free Ti-based alloys since 1979. This paper reviews the present author's research results for the latter two materials since 1981. The topics on the Ti-Ni-based alloys include the achievement of superelasticity in Ti-Ni alloys through understanding of the role of microstructures consisting of dislocations and precipitates, followed by the contribution to the development of application market of shape memory effect and superelasticity, characterization of the R-phase and monoclinic martensitic transformations, clarification of the basic characteristics of fatigue properties, development of sputter-deposited shape memory thin films and fabrication of prototypes of microactuators utilizing thin films, development of high temperature shape memory alloys, and so on. The topics of Ni-free Ti-based shape memory alloys include the characterization of the orthorhombic phase martensitic transformation and related shape memory effect and superelasticity, the effects of texture, omega phase and adding elements on the martensitic transformation and shape memory properties, clarification of the unique effects of oxygen addition to induce non-linear large elasticity, Invar effect and heating-induced martensitic transformation, and so on.

Prediction of successful memory encoding based on single-trial rhinal and hippocampal phase information.

PubMed

Höhne, Marlene; Jahanbekam, Amirhossein; Bauckhage, Christian; Axmacher, Nikolai; Fell, Juergen

2016-10-01

Mediotemporal EEG characteristics are closely related to long-term memory formation. It has been reported that rhinal and hippocampal EEG measures reflecting the stability of phases across trials are better suited to distinguish subsequently remembered from forgotten trials than event-related potentials or amplitude-based measures. Theoretical models suggest that the phase of EEG oscillations reflects neural excitability and influences cellular plasticity. However, while previous studies have shown that the stability of phase values across trials is indeed a relevant predictor of subsequent memory performance, the effect of absolute single-trial phase values has been little explored. Here, we reanalyzed intracranial EEG recordings from the mediotemporal lobe of 27 epilepsy patients performing a continuous word recognition paradigm. Two-class classification using a support vector machine was performed to predict subsequently remembered vs. forgotten trials based on individually selected frequencies and time points. We demonstrate that it is possible to successfully predict single-trial memory formation in the majority of patients (23 out of 27) based on only three single-trial phase values given by a rhinal phase, a hippocampal phase, and a rhinal-hippocampal phase difference. Overall classification accuracy across all subjects was 69.2% choosing frequencies from the range between 0.5 and 50Hz and time points from the interval between -0.5s and 2s. For 19 patients, above chance prediction of subsequent memory was possible even when choosing only time points from the prestimulus interval (overall accuracy: 65.2%). Furthermore, prediction accuracies based on single-trial phase surpassed those based on single-trial power. Our results confirm the functional relevance of mediotemporal EEG phase for long-term memory operations and suggest that phase information may be utilized for memory enhancement applications based on deep brain stimulation. Copyright © 2016 Elsevier Inc. All rights reserved.

A processing architecture for associative short-term memory in electronic noses

NASA Astrophysics Data System (ADS)

Pioggia, G.; Ferro, M.; Di Francesco, F.; DeRossi, D.

2006-11-01

Electronic nose (e-nose) architectures usually consist of several modules that process various tasks such as control, data acquisition, data filtering, feature selection and pattern analysis. Heterogeneous techniques derived from chemometrics, neural networks, and fuzzy rules used to implement such tasks may lead to issues concerning module interconnection and cooperation. Moreover, a new learning phase is mandatory once new measurements have been added to the dataset, thus causing changes in the previously derived model. Consequently, if a loss in the previous learning occurs (catastrophic interference), real-time applications of e-noses are limited. To overcome these problems this paper presents an architecture for dynamic and efficient management of multi-transducer data processing techniques and for saving an associative short-term memory of the previously learned model. The architecture implements an artificial model of a hippocampus-based working memory, enabling the system to be ready for real-time applications. Starting from the base models available in the architecture core, dedicated models for neurons, maps and connections were tailored to an artificial olfactory system devoted to analysing olive oil. In order to verify the ability of the processing architecture in associative and short-term memory, a paired-associate learning test was applied. The avoidance of catastrophic interference was observed.

Ferromagnetic Josephson Junctions for Cryogenic Memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

2015-03-01

Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

Formation of microporous NiTi by transient liquid phase sintering of elemental powders.

PubMed

Ismail, Muhammad Hussain; Goodall, Russell; Davies, Hywel A; Todd, Iain

2012-08-01

Porous metallic structures are attractive for biomedical implant applications as their open porosity simultaneously improves the degree of fixation and decreases the mismatch in stiffness between bone and implant, improving bonding and reducing stress-shielding effects respectively. NiTi alloys exhibit both the shape memory effect and pseudoelasticity, and are of particular interest, though they pose substantial problems in their processing. This is because the shape memory and pseudoelastic behaviours are exceptionally sensitive to the presence of oxygen, and other minor changes in alloy chemistry. Thus in processing careful control of composition and contamination is vital. In this communication, we investigate these issues in a novel technique for producing porous NiTi parts via transient liquid phase sintering following metal injection moulding (MIM) of elemental Ni and Ti powders, and report a new mechanism for pore formation in the powder processing of metallic materials from elemental powders. Copyright © 2012 Elsevier B.V. All rights reserved.

Visual long-term memory and change blindness: Different effects of pre- and post-change information on one-shot change detection using meaningless geometric objects.

PubMed

Nishiyama, Megumi; Kawaguchi, Jun

2014-11-01

To clarify the relationship between visual long-term memory (VLTM) and online visual processing, we investigated whether and how VLTM involuntarily affects the performance of a one-shot change detection task using images consisting of six meaningless geometric objects. In the study phase, participants observed pre-change (Experiment 1), post-change (Experiment 2), or both pre- and post-change (Experiment 3) images appearing in the subsequent change detection phase. In the change detection phase, one object always changed between pre- and post-change images and participants reported which object was changed. Results showed that VLTM of pre-change images enhanced the performance of change detection, while that of post-change images decreased accuracy. Prior exposure to both pre- and post-change images did not influence performance. These results indicate that pre-change information plays an important role in change detection, and that information in VLTM related to the current task does not always have a positive effect on performance. Copyright © 2014 Elsevier Inc. All rights reserved.

Two-bit multi-level phase change random access memory with a triple phase change material stack structure

NASA Astrophysics Data System (ADS)

Gyanathan, Ashvini; Yeo, Yee-Chia

2012-11-01

This work demonstrates a novel two-bit multi-level device structure comprising three phase change material (PCM) layers, separated by SiN thermal barrier layers. This triple PCM stack consisted of (from bottom to top), Ge2Sb2Te5 (GST), an ultrathin SiN barrier, nitrogen-doped GST, another ultrathin SiN barrier, and Ag0.5In0.5Sb3Te6. The PCM layers can selectively amorphize to form 4 different resistance levels ("00," "01," "10," and "11") using respective voltage pulses. Electrical characterization was extensively performed on these devices. Thermal analysis was also done to understand the physics behind the phase changing characteristics of the two-bit memory devices. The melting and crystallization temperatures of the PCMs play important roles in the power consumption of the multi-level devices. The electrical resistivities and thermal conductivities of the PCMs and the SiN thermal barrier are also crucial factors contributing to the phase changing behaviour of the PCMs in the two-bit multi-level PCRAM device.

Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change

NASA Astrophysics Data System (ADS)

Shuang, Y.; Sutou, Y.; Hatayama, S.; Shindo, S.; Song, Y. H.; Ando, D.; Koike, J.

2018-04-01

Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode.

Synaptic tagging, evaluation of memories, and the distal reward problem.

PubMed

Päpper, Marc; Kempter, Richard; Leibold, Christian

2011-01-01

Long-term synaptic plasticity exhibits distinct phases. The synaptic tagging hypothesis suggests an early phase in which synapses are prepared, or "tagged," for protein capture, and a late phase in which those proteins are integrated into the synapses to achieve memory consolidation. The synapse specificity of the tags is consistent with conventional neural network models of associative memory. Memory consolidation through protein synthesis, however, is neuron specific, and its functional role in those models has not been assessed. Here, using a theoretical network model, we test the tagging hypothesis on its potential to prolong memory lifetimes in an online-learning paradigm. We find that protein synthesis, though not synapse specific, prolongs memory lifetimes if it is used to evaluate memory items on a cellular level. In our model we assume that only "important" memory items evoke protein synthesis such that these become more stable than "unimportant" items, which do not evoke protein synthesis. The network model comprises an equilibrium distribution of synaptic states that is very susceptible to the storage of new items: Most synapses are in a state in which they are plastic and can be changed easily, whereas only those synapses that are essential for the retrieval of the important memory items are in the stable late phase. The model can solve the distal reward problem, where the initial exposure of a memory item and its evaluation are temporally separated. Synaptic tagging hence provides a viable mechanism to consolidate and evaluate memories on a synaptic basis.

Rewriting magnetic phase change memory by laser heating

NASA Astrophysics Data System (ADS)

Timmerwilke, John; Liou, Sy-Hwang; Cheng, Shu Fan; Edelstein, Alan S.

2016-04-01

Magnetic phase change memory (MAG PCM) consists of bits with different magnetic permeability values. The bits are read by measuring their effect on a magnetic probe field. Previously low permeability crystalline bits had been written in high permeability amorphous films of Metglas via laser heating. Here data is presented showing that by applying short laser pulses with the appropriate power to previously crystallized regions they can first be vitrified and then again crystallized. Thus, MAG PCM is rewriteable. Technical issues in processing the bits are discussed and results on thermal modeling are presented.

The effects of velocity difference changes with memory on the dynamics characteristics and fuel economy of traffic flow

NASA Astrophysics Data System (ADS)

Yu, Shaowei; Zhao, Xiangmo; Xu, Zhigang; Zhang, Licheng

2016-11-01

To evaluate the effects of velocity difference changes with memory in the intelligent transportation environment on the dynamics and fuel consumptions of traffic flow, we first investigate the linkage between velocity difference changes with memory and car-following behaviors with the measured data in cities, and then propose an improved cooperative car-following model considering multiple velocity difference changes with memory in the cooperative adaptive cruise control strategy, finally carry out several numerical simulations under the periodic boundary condition and at signalized intersections to explore how velocity difference changes with memory affect car's velocity, velocity fluctuation, acceleration and fuel consumptions in the intelligent transportation environment. The results show that velocity difference changes with memory have obvious effects on car-following behaviors, that the improved cooperative car-following model can describe the phase transition of traffic flow and estimate the evolution of traffic congestion, that the stability and fuel economy of traffic flow simulated by the improved car-following model with velocity difference changes with memory is obviously superior to those without velocity difference changes, and that taking velocity difference changes with memory into account in designing the advanced adaptive cruise control strategy can significantly improve the stability and fuel economy of traffic flow.

Phonological awareness and the working memory of children with and without literacy difficulties.

PubMed

Cardoso, Andreia Martins de Souza; Silva, Mônica Marins da; Pereira, Mônica Medeiros de Britto

2013-01-01

To investigate phonological awareness and working memory skills as well as their influence on the literacy process in a group of intellectually normal children. Forty intellectually normal children (7.6-8.0 years) from the second and third grades of elementary school participated. Children were organized in two groups (20 children each): one with and another without literacy difficulties. These participants underwent RAVEN's intelligence quotient test, audiometric assessment, CONFIAS test of phonological awareness, written spelling task, and working memory test. Children in the alphabetic phase presented a good development of phonological awareness, and 85% of them showed a high-performance working memory. Children in the syllabic-alphabetic phase had changes in phonological awareness, and 91.6% of them showed an average working memory performance. The subjects at pre-syllabic and syllabic phases demonstrated more difficulties in phonological awareness than those at syllabic-alphabetic and had a poor working memory performance. Between-group differences were observed for CONFIAS and working memory tests (p<0.0001). There was also a significant correlation (r=0.78, p=0.01) between the skills of phonological awareness and working memory for the total sample of individuals. Based on these results, it was found that as phonological awareness and working memory levels increased, the literacy phase also advanced, therefore showing that these are directly proportional measures.

Influence of the exchange and correlation functional on the structure of amorphous InSb and In{sub 3}SbTe{sub 2} compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gabardi, Silvia; Caravati, Sebastiano; Bernasconi, Marco, E-mail: marco.bernasconi@mater.unimib.it

2016-05-28

We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In{sub 3}SbTe{sub 2} compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtainedmore » with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge{sub 2}Sb{sub 2}Te{sub 5} phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.« less

Material Engineering for Phase Change Memory

NASA Astrophysics Data System (ADS)

Cabrera, David M.

As semiconductor devices continue to scale downward, and portable consumer electronics become more prevalent there is a need to develop memory technology that will scale with devices and use less energy, while maintaining performance. One of the leading prototypical memories that is being investigated is phase change memory. Phase change memory (PCM) is a non-volatile memory composed of 1 transistor and 1 resistor. The resistive structure includes a memory material alloy which can change between amorphous and crystalline states repeatedly using current/voltage pulses of different lengths and magnitudes. The most widely studied PCM materials are chalcogenides - Germanium-Antimony-Tellerium (GST) with Ge2Sb2Te3 and Germanium-Tellerium (GeTe) being some of the most popular stochiometries. As these cells are scaled downward, the current/voltage needed to switch these materials becomes comparable to the voltage needed to sense the cell's state. The International Roadmap for Semiconductors aims to raise the threshold field of these devices from 66.6 V/mum to be at least 375 V/mum for the year 2024. These cells are also prone to resistance drift between states, leading to bit corruption and memory loss. Phase change material properties are known to influence PCM device performance such as crystallization temperature having an effect on data retention and litetime, while resistivity values in the amorphous and crystalline phases have an effect on the current/voltage needed to write/erase the cell. Addition of dopants is also known to modify the phase change material parameters. The materials G2S2T5, GeTe, with dopants - nitrogen, silicon, titanium, and aluminum oxide and undoped Gallium-Antimonide (GaSb) are studied for these desired characteristics. Thin films of these compositions are deposited via physical vapor deposition at IBM Watson Research Center. Crystallization temperatures are investigated using time resolved x-ray diffraction at Brookhaven National Laboratory. Subsequently, these are incorporated into PCM cells with structure designed as shown in Fig.1. A photolithographic lift-off process is developed to realize these devices. Electrical parameters such as the voltage needed to switch the device between memory states, the difference in resistance between these memory states, and the amount of time to switch are studied using HP4145 equipped with a pulsed generator. The results show that incorporating aluminum oxide dopant into G2S2T 5 raises its threshold field from 60 V/mum to 96 V/mum, while for GeTe, nitrogen doping raises its threshold field from 143 V/mum to 248 V/mum. It is found that GaSb at comparable volume devices has a threshold field of 130 V/mum. It was also observed that nitrogen and silicon doping made G 2S2T5 more resistant to drift, raising time to drift from 2 to 16.6 minutes while titanium and aluminum oxide doping made GeTe drift time rise from 3 to 20 minutes. It was also found that shrinking the cell area in GaSb from 1 mum2 to 0.5 mum2 lengthened drift time from 45s to over 24 hours. The PCM process developed in this study is extended to GeTe/Sb2 Te3 multilayers called the superlattice (SL) structure that opens opportunities for future work. Recent studies have shown that the superlattice structure exhibits low switching energies, therefore has potential for low power operation.

Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge2Sb2Te5 phase-change memory material

PubMed Central

Sun, Zhimei; Zhou, Jian; Pan, Yuanchun; Song, Zhitang; Mao, Ho-Kwang; Ahuja, Rajeev

2011-01-01

Ge2Sb2Te5 (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for the use in phase-change random access memory devices. This type of data storage is achieved by the fast reversible phase transition between amorphous and crystalline GST upon heat pulse. Here we report pressure-induced reversible crystalline-amorphous and polymorphic amorphous transitions in NaCl structured GST by ab initio molecular dynamics calculations. We have showed that the onset amorphization of GST starts at approximately 18 GPa and the system become completely random at approximately 22 GPa. This amorphous state has a cubic framework (c-amorphous) of sixfold coordinations. With further increasing pressure, the c-amorphous transforms to a high-density amorphous structure with trigonal framework (t-amorphous) and an average coordination number of eight. The pressure-induced amorphization is investigated to be due to large displacements of Te atoms for which weak Te–Te bonds exist or vacancies are nearby. Upon decompressing to ambient conditions, the original cubic crystalline structure is restored for c-amorphous, whereas t-amorphous transforms to another amorphous phase that is similar to the melt-quenched amorphous GST. PMID:21670255

Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

PubMed

Sun, Zhimei; Zhou, Jian; Pan, Yuanchun; Song, Zhitang; Mao, Ho-Kwang; Ahuja, Rajeev

2011-06-28

Ge(2)Sb(2)Te(5) (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for the use in phase-change random access memory devices. This type of data storage is achieved by the fast reversible phase transition between amorphous and crystalline GST upon heat pulse. Here we report pressure-induced reversible crystalline-amorphous and polymorphic amorphous transitions in NaCl structured GST by ab initio molecular dynamics calculations. We have showed that the onset amorphization of GST starts at approximately 18 GPa and the system become completely random at approximately 22 GPa. This amorphous state has a cubic framework (c-amorphous) of sixfold coordinations. With further increasing pressure, the c-amorphous transforms to a high-density amorphous structure with trigonal framework (t-amorphous) and an average coordination number of eight. The pressure-induced amorphization is investigated to be due to large displacements of Te atoms for which weak Te-Te bonds exist or vacancies are nearby. Upon decompressing to ambient conditions, the original cubic crystalline structure is restored for c-amorphous, whereas t-amorphous transforms to another amorphous phase that is similar to the melt-quenched amorphous GST.

Phase-change memory function of correlated electrons in organic conductors

NASA Astrophysics Data System (ADS)

Oike, H.; Kagawa, F.; Ogawa, N.; Ueda, A.; Mori, H.; Kawasaki, M.; Tokura, Y.

2015-01-01

Phase-change memory (PCM), a promising candidate for next-generation nonvolatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions emerging from a charge-configuration degree of freedom in strongly correlated electron systems. Nonvolatile reversible switching between a high-resistivity charge-crystalline (or charge-ordered) state and a low-resistivity quenched state, charge glass, is achieved experimentally via heat pulses supplied by optical or electrical means in organic conductors θ -(BEDT-TTF)2X . Switching that is one order of magnitude faster is observed in another isostructural material that requires faster cooling to kinetically avoid charge crystallization, indicating that the material's critical cooling rate can be useful guidelines for pursuing a faster correlated-electron PCM function.

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier.

PubMed

Ahn, Chiyui; Fong, Scott W; Kim, Yongsung; Lee, Seunghyun; Sood, Aditya; Neumann, Christopher M; Asheghi, Mehdi; Goodson, Kenneth E; Pop, Eric; Wong, H-S Philip

2015-10-14

Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 10(5) cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.

Design of an optimised readout architecture for phase-change probe memory using Ge2Sb2Te5 media

NASA Astrophysics Data System (ADS)

Wang, Lei; Wright, C. David; Aziz, Mustafa M.; Yang, Ci-Hui; Yang, Guo-Wei

2014-02-01

Phase-change probe memory has recently received considerable attention on its writing performance, while its readout performance is rarely evaluated. Therefore, a three-dimensional readout model has been developed for the first time to calculate the reading contrast by varying the electrical conductivities and the thickness of the capping and under layers as well as the thickness of the Ge2Sb2Te5 layer. It is found that a phase-change probe architecture, consisting of a 10 nm Ge2Sb2Te5 layer sandwiched by a 2 nm, 50 Ω-1 m-1 capping layer and a 40 nm, 5 × 106 Ω-1 m-1 under layer, has the capability of providing the optimal readout performance.

First-principles study of the liquid and amorphous phases of In2Te3

NASA Astrophysics Data System (ADS)

Dragoni, D.; Gabardi, S.; Bernasconi, M.

2017-08-01

Structural, dynamical, and electronic properties of the liquid and amorphous phase of the In2Te3 compound have been studied by means of density functional molecular dynamics simulations. This system is of interest as a phase change material, undergoing a fast and reversible change between the crystalline and amorphous phases upon heating. It can be seen as a constituent of ternary InSbTe alloys which are receiving attention for application in electronic phase change memories. Amorphous models of In2Te3 300 -atom large have been generated by quenching from the melt by using different exchange and correlation functionals and different descriptions of the van der Waals interaction. It turns out the local bonding geometry of the amorphous phase is mostly tetrahedral with corner and edge sharing tetrahedra similar to those found in the crystalline phases of the InTe, In2Te3 , and In2Te5 compounds. Benchmark calculations on the crystalline α phase of In2Te3 in the defective zincblend geometry have also been performed. The calculations reveal that the high symmetric F 4 ¯3 m structure inferred experimentally from x-ray diffraction for the α phase must actually result from a random distribution of Te-Te bonds in different octahedral cages formed by the coalescence of vacancies in the In sublattice.

The electrophysiological correlates of recent and remote recollection.

PubMed

Roberts, J S; Tsivilis, D; Mayes, A R

2013-09-01

Research using event related potentials (ERPs) to explore recognition memory has linked late parietal old/new effects to the recollection of episodic information. In the vast majority of these studies, the retrieval phase immediately follows encoding and consequently, very little is known about the ERP correlates of long term recollection. This is despite the fact that in other areas of the memory literature there is considerable interest in consolidation theories and the way episodic memory changes over time. The present study explored the idea that consolidation and forgetting processes operating over a moderate retention interval can alter the ERP markers of recollection memory. A remember/know test probed memory for stimuli studied either 15 minutes (recent memory) or 1 week (remote memory) prior to the test phase. Results revealed an attenuated late parietal effect for remote compared to recent remember responses, a finding that remained significant even when these recognition judgments were matched for reaction time. Experiments 2a and 2b identified characteristic differences between recent and remote recognition at the behavioural level. The 1 week delay produced an overall decline in recognition confidence and a dramatic loss of episodic detail. These behavioural changes are thought to underlie the ERP effects reported in the first experiment. The results highlight that although the neural basis of memory may exhibit significant changes as the length of the retention interval increases, it is important to consider the extent to which this is a direct effect of time or an indirect effect due to changes in memory quality, such as the amount of detail that can be recollected. © 2013 Elsevier Ltd. All rights reserved.

Changes in Context-Specificity during Memory Reconsolidation: Selective Effects of Hippocampal Lesions

ERIC Educational Resources Information Center

Winocur, Gordon; Frankland, Paul W.; Sekeres, Melanie; Fogel, Stuart; Moscovitch, Morris

2009-01-01

After acquisition, memories associated with contextual fear conditioning pass through a labile phase, in which they are vulnerable to hippocampal lesions, to a more stable state, via consolidation, in which they engage extrahippocampal structures and are resistant to such disruption. The process is accompanied by changes in the form of the memory…

Effect of Se substitution on the phase change properties of Ge2Sb2Te5

NASA Astrophysics Data System (ADS)

Shekhawat, Roopali; Rangappa, Ramanna; Gopal, E. S. R.; Ramesh, K.

2018-05-01

Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contrast in electrical resistivity (about 103). The phase change is between amorphous and metastable NaCl structure occurs at about 150°C and not to the stable hexagonal phase which occurs at a high temperature (> 250 °C). In GST, about 50 % of Te substituted by Se (Ge2Sb2Te2.5Se2.5) is found to increase the contrast in electrical resistivity by 7 orders of magnitude (about 4 orders of magnitude higher than GST). The phase transition in Se added GST also found to be between amorphous and the stable hexagonal structure. The threshold voltage at which the Ge2Sb2Te2.5Se2.5 switches to the high conducting state increases to 9V as compared to 2V in GST. Interestingly, the threshold current decrease to 1mA as compared to 1.8mA in GST indicating the Se substitution reduces the power needed for switching between the low and high conducting states. The reduction in power needed for phase change, high contrast in electrical resistivity with high thermal stability makes Ge2Sb2Te2.5Se2.5 as a better candidate for PCRAM.

Effects of the thermal and magnetic paths on first order martensite transition of disordered Ni45Mn44Sn9In2 Heusler alloy exhibiting a giant magnetocaloric effect and magnetoresistance near room temperature

NASA Astrophysics Data System (ADS)

Chabri, T.; Ghosh, A.; Nair, Sunil; Awasthi, A. M.; Venimadhav, A.; Nath, T. K.

2018-05-01

The existence of a first order martensite transition in off-stoichiometric Ni45Mn44Sn9In2 ferromagnetic shape memory Heusler alloy has been clearly observed by thermal, magnetic, and magneto-transport measurements. Field and thermal path dependence of the change in large magnetic entropy and negative magnetoresistance are observed, which originate due to the sharp change in magnetization driven by metamagnetic transition from the weakly magnetic martensite phase to the ferromagnetic austenite phase in the vicinity of the martensite transition. The noticeable shift in the martensite transition with the application of a magnetic field is the most significant feature of the present study. This shift is due to the interplay of the austenite and martensite phase fraction in the alloy. The different aspects of the first order martensite transition, e.g. broadening of the martensite transition and the field induced arrest of the austenite phase are mainly related to the dynamics of coexisting phases in the vicinity of the martensite transition. The alloy also shows a second order ferromagnetic  →  paramagnetic transition near the Curie temperature of the austenite phase. A noticeably large change in magnetic entropy (ΔS M   =  24 J kg‑1 K‑1 at 298 K) and magnetoresistance (=  ‑33% at 295 K) has been observed for the change in 5 and 8 T magnetic fields, respectively. The change in adiabatic temperature for the change in a magnetic field of 5 T is found to be  ‑3.8 K at 299 K. The low cost of the ingredients and the large change in magnetic entropy very near to the room temperature makes Ni45Mn44Sn9In2 alloy a promising magnetic refrigerant for real technological application.

A stress-induced phase transition model for semi-crystallize shape memory polymer

NASA Astrophysics Data System (ADS)

Guo, Xiaogang; Zhou, Bo; Liu, Liwu; Liu, Yanju; Leng, Jinsong

2014-03-01

The developments of constitutive models for shape memory polymer (SMP) have been motivated by its increasing applications. During cooling or heating process, the phase transition which is a continuous time-dependent process happens in semi-crystallize SMP and the various individual phases form at different temperature and in different configuration. Then, the transformation between these phases occurred and shape memory effect will emerge. In addition, stress applied on SMP is an important factor for crystal melting during phase transition. In this theory, an ideal phase transition model considering stress or pre-strain is the key to describe the behaviors of shape memory effect. So a normal distributed model was established in this research to characterize the volume fraction of each phase in SMP during phase transition. Generally, the experiment results are partly backward (in heating process) or forward (in cooling process) compared with the ideal situation considering delay effect during phase transition. So, a correction on the normal distributed model is needed. Furthermore, a nonlinear relationship between stress and phase transition temperature Tg is also taken into account for establishing an accurately normal distributed phase transition model. Finally, the constitutive model which taking the stress as an influence factor on phase transition was also established. Compared with the other expressions, this new-type model possesses less parameter and is more accurate. For the sake of verifying the rationality and accuracy of new phase transition and constitutive model, the comparisons between the simulated and experimental results were carried out.

A low jitter PLL clock used for phase change memory

NASA Astrophysics Data System (ADS)

Xiao, Hong; Houpeng, Chen; Zhitang, Song; Daolin, Cai; Xi, Li

2013-02-01

A fully integrated low-jitter, precise frequency CMOS phase-locked loop (PLL) clock for the phase change memory (PCM) drive circuit is presented. The design consists of a dynamic dual-reset phase frequency detector (PFD) with high frequency acquisition, a novel low jitter charge pump, a CMOS ring oscillator based voltage-controlled oscillator (VCO), a 2nd order passive loop filter, and a digital frequency divider. The design is fabricated in 0.35 μm CMOS technology and consumes 20 mW from a supply voltage of 5 V. In terms of the PCM's program operation requirement, the output frequency range is from 1 to 140 MHz. For the 140 MHz output frequency, the circuit features a cycle-to-cycle jitter of 28 ps RMS and 250 ps peak-to-peak.

New developments in optical phase-change memory

NASA Astrophysics Data System (ADS)

Ovshinsky, Stanford R.; Czubatyj, Wolodymyr

2001-02-01

Phase change technology has progressed from the original invention of Ovshinsky to become the leading choice for rewritable optical disks. ECD's early work in phase change materials and methods for operating in a direct overwrite fashion were crucial to the successes that have been achieved. Since the introduction of the first rewritable phase change products in 1991, the market has expanded from CD-RW into rewritable DVD with creative work going on worldwide. Phase change technology is ideally suited to address the continuous demand for increased storage capacity. First, laser beams can be focused to ever-smaller spot sizes using shorter wavelength lasers and higher performance optics. Blue lasers are now commercially viable and high numerical aperture and near field lenses have been demonstrated. Second, multilevel approaches can be used to increase capacity by a factor of three or more with concomitant increases in data transfer rate. In addition, ECD has decreased manufacturing costs through the use of innovative production technology. These factors combine to accelerate the widespread use of phase change technology. As in all our technologies, such as thin film photovoltaics, nickel metal hydride batteries, hydrogen storage systems, fuel cells, electrical memory, etc., we have invented the materials, the products, the production machines and the production processes for high rate, low-cost manufacture.

Shape-Memory-Alloy Actuator For Flight Controls

NASA Technical Reports Server (NTRS)

Barret, Chris

1995-01-01

Report proposes use of shape-memory-alloy actuators, instead of hydraulic actuators, for aerodynamic flight-control surfaces. Actuator made of shape-memory alloy converts thermal energy into mechanical work by changing shape as it makes transitions between martensitic and austenitic crystalline phase states of alloy. Because both hot exhaust gases and cryogenic propellant liquids available aboard launch rockets, shape-memory-alloy actuators exceptionally suited for use aboard such rockets.

Phase change cellular automata modeling of GeTe, GaSb and SnSe stacked chalcogenide films

NASA Astrophysics Data System (ADS)

Mihai, C.; Velea, A.

2018-06-01

Data storage needs are increasing at a rapid pace across all economic sectors, so the need for new memory technologies with adequate capabilities is also high. Phase change memories (PCMs) are a leading contender in the emerging race for non-volatile memories due to their fast operation speed, high scalability, good reliability and low power consumption. However, in order to meet the present and future storage demands, PCM technologies must further increase the storage density. Here, we employ a probabilistic cellular automata approach to explore the multi-step threshold switching from the reset (off) to the set (on) state in chalcogenide stacked structures. Simulations have shown that in order to obtain multi-step switching with high contrast among different resistance states, the stacked structure needs to contain materials with a large difference among their crystallization temperatures and careful tuning of strata thicknesses. The crystallization dynamics can be controlled through the external energy pulses applied to the system, in such a way that a balance between nucleation and growth in phase change behavior can be achieved, optimized for PCMs.

Stimulated electronic transition concept for an erasable optical memory

NASA Technical Reports Server (NTRS)

Albin, Sacharia; Satira, James D.; Livingston, David L.; Shull, Thomas A.

1992-01-01

A new concept for an erasable optical memory is demonstrated using stimulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. The properties of MgS:Eu,Sm and SrS:Eu,Sm as possible media for the SET process are investigated. Quantum storage is achieved in the form of charges in deep levels in the medium and stimulated radiative recombination is used as the reading process. Unlike magneto-optic (M-O) and phase change (PC) processes, optical writing, reading and erasing are achieved without localized heating. The SET process will have an inherently faster data transfer rate and a higher storage density, and the medium will be more durable than the M-O and PC media. A possible application of the SET process in neural networks is also discussed.

Age-related cognitive task effects on gait characteristics: do different working memory components make a difference?

PubMed

Qu, Xingda

2014-10-27

Though it is well recognized that gait characteristics are affected by concurrent cognitive tasks, how different working memory components contribute to dual task effects on gait is still unknown. The objective of the present study was to investigate dual-task effects on gait characteristics, specifically the application of cognitive tasks involving different working memory components. In addition, we also examined age-related differences in such dual-task effects. Three cognitive tasks (i.e. 'Random Digit Generation', 'Brooks' Spatial Memory', and 'Counting Backward') involving different working memory components were examined. Twelve young (6 males and 6 females, 20 ~ 25 years old) and 12 older participants (6 males and 6 females, 60 ~ 72 years old) took part in two phases of experiments. In the first phase, each cognitive task was defined at three difficulty levels, and perceived difficulty was compared across tasks. The cognitive tasks perceived to be equally difficult were selected for the second phase. In the second phase, four testing conditions were defined, corresponding to a baseline and the three equally difficult cognitive tasks. Participants walked on a treadmill at their self-selected comfortable speed in each testing condition. Body kinematics were collected during treadmill walking, and gait characteristics were assessed using spatial-temporal gait parameters. Application of the concurrent Brooks' Spatial Memory task led to longer step times compared to the baseline condition. Larger step width variability was observed in both the Brooks' Spatial Memory and Counting Backward dual-task conditions than in the baseline condition. In addition, cognitive task effects on step width variability differed between two age groups. In particular, the Brooks' Spatial Memory task led to significantly larger step width variability only among older adults. These findings revealed that cognitive tasks involving the visuo-spatial sketchpad interfered with gait more severely in older versus young adults. Thus, dual-task training, in which a cognitive task involving the visuo-spatial sketchpad (e.g. the Brooks' Spatial Memory task) is concurrently performed with walking, could be beneficial to mitigate impairments in gait among older adults.

A uniaxial constitutive model for superelastic NiTi SMA including R-phase and martensite transformations and thermal effects

NASA Astrophysics Data System (ADS)

Helbert, Guillaume; Saint-Sulpice, Luc; Arbab Chirani, Shabnam; Dieng, Lamine; Lecompte, Thibaut; Calloch, Sylvain; Pilvin, Philippe

2017-02-01

The well-known martensitic transformation is not always the unique solid-solid phase change in NiTi shape memory alloys (SMA). For this material, R-phase can occur from both austenite and martensite. In some applications, macroscopic strain of the material can be limited to 2%. In these cases, R-phase contribution can not be neglected anymore when compared with martensite. Furthermore, different thermomechanical couplings have to be taken into account to carefully predict strain rate effects and to better describe application conditions. In this paper, a new model taking into account various phase transformations with thermomechanical couplings is presented. This model is based on several transformation criteria. In most applications, SMA are used as wires, submitted to tensile-tensile loadings, in the superelasticity working range. Consequently, a uniaxial reduction of the model is presented for its simplicity. A thermodynamic framework is proposed. It enables to describe the internal variables evolution laws. The simple and fast identification process of model parameters is briefly presented. To verify the validity of the proposed model, simulation results are compared with experimental ones. The influences of testing temperature and strain amplitude on the material behavior is discussed. The damping capacity is also studied, using an energy-based criterion.

Storage and retrieval of vector beams of light in a multiple-degree-of-freedom quantum memory.

PubMed

Parigi, Valentina; D'Ambrosio, Vincenzo; Arnold, Christophe; Marrucci, Lorenzo; Sciarrino, Fabio; Laurat, Julien

2015-07-13

The full structuration of light in the transverse plane, including intensity, phase and polarization, holds the promise of unprecedented capabilities for applications in classical optics as well as in quantum optics and information sciences. Harnessing special topologies can lead to enhanced focusing, data multiplexing or advanced sensing and metrology. Here we experimentally demonstrate the storage of such spatio-polarization-patterned beams into an optical memory. A set of vectorial vortex modes is generated via liquid crystal cell with topological charge in the optic axis distribution, and preservation of the phase and polarization singularities is demonstrated after retrieval, at the single-photon level. The realized multiple-degree-of-freedom memory can find applications in classical data processing but also in quantum network scenarios where structured states have been shown to provide promising attributes, such as rotational invariance.

Storage and retrieval of vector beams of light in a multiple-degree-of-freedom quantum memory

PubMed Central

Parigi, Valentina; D'Ambrosio, Vincenzo; Arnold, Christophe; Marrucci, Lorenzo; Sciarrino, Fabio; Laurat, Julien

2015-01-01

The full structuration of light in the transverse plane, including intensity, phase and polarization, holds the promise of unprecedented capabilities for applications in classical optics as well as in quantum optics and information sciences. Harnessing special topologies can lead to enhanced focusing, data multiplexing or advanced sensing and metrology. Here we experimentally demonstrate the storage of such spatio-polarization-patterned beams into an optical memory. A set of vectorial vortex modes is generated via liquid crystal cell with topological charge in the optic axis distribution, and preservation of the phase and polarization singularities is demonstrated after retrieval, at the single-photon level. The realized multiple-degree-of-freedom memory can find applications in classical data processing but also in quantum network scenarios where structured states have been shown to provide promising attributes, such as rotational invariance. PMID:26166257

Thermodynamics of multicaloric effects in multiferroic materials: application to metamagnetic shape-memory alloys and ferrotoroidics

DOE PAGES

Planes, Antoni; Castán, Teresa; Saxena, Avadh

2016-07-11

In this paper, we develop a general thermodynamic framework to investigate multicaloric effects in multiferroic materials. This is applied to the study of both magnetostructural and magnetoelectric multiferroics. Landau models with appropriate interplay between the corresponding ferroic properties (order parameters) are proposed for metamagnetic shape-memory and ferrotoroidic materials, which, respectively, belong to the two classes of multiferroics. For each ferroic property, caloric effects are quantified by the isothermal entropy change induced by the application of the corresponding thermodynamically conjugated field. The multicaloric effect is obtained as a function of the two relevant applied fields in each class of multiferroics. Itmore » is further shown that multicaloric effects comprise the corresponding contributions from caloric effects associated with each ferroic property and the cross-contribution arising from the interplay between these ferroic properties. Finally, this article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’.« less

A rotating arm using shape-memory alloy

NASA Technical Reports Server (NTRS)

Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

NASA's Mars Pathfinder mission, to be launched in 1996, reflects a new philosophy of exploiting new technologies to reduce mission cost and accelerate the pace of space exploration. One of the experiments on board Pathfinder will demonstrate the first use in space of a multi-cycle, electrically-activated, shape-memory alloy (SMA) actuator. SMA's are metal alloys which, when heated, undergo a crystalline phase change. This change in phase alters the alloy lattice-constant, resulting in a change of dimension. Upon cooling, the alloy returns to its original lattice formation. Wire drawn from an SMA contracts in length when heated. The reversible change in length is 3 percent to 5 percent. The wire used in this actuator is a nickel-titanium alloy known as nitinol.

Menstrual cycle phase effects on memory and Stroop task performance.

PubMed

Hatta, Takeshi; Nagaya, Keiko

2009-10-01

The present study examined differences in Stroop and memory task performances modulated by gonadal steroid hormones during the menstrual cycle in women. Thirty women with regular menstrual cycles performed a logical memory task (Wechsler Memory Scale) and the Stroop task. The results showed a significant difference in Stroop task performance between low and high levels of estradiol and progesterone during the menstrual cycle, but there was no significant difference in memory performance between the two phases, nor was there any significant mood change that might have influenced cognitive performance. These findings suggest that sex-related hormone modulation selectively affects cognitive functions depending on the type of task and low level secretion of estradiol appears to contribute to reducing the level of attention that relates to the prefrontal cortex.

First-principles Study of Phonons in Structural Phase Change of Ge-Sb-Te Compounds

NASA Astrophysics Data System (ADS)

Song, Young-Sun; Kim, Jeongwoo; Kim, Minjae; Jhi, Seung-Hoon

Ge-Sb-Te (GST) compounds, exhibiting substantial electrical and optical contrast at extremely fast switching modes, have attracted great attention for application as non-volatile memory devices. Despite extensive studies of GST compounds, the underlying mechanism for fast transitions between amorphous and crystalline phases is yet to be revealed. We study the vibrational property of various GST compounds and the role of nitrogen doping on phase-change processes using first-principles calculations. We find that a certain vibrational mode (Eu) plays a crucial role to determine transition temperatures, and that its frequency depends on the amount of Ge in GST. We also find that the nitrogen doping drives crystalline-amorphous transition at low power consumption modes. In addition, we discuss the effect of the spin-orbit coupling on vibration modes, which is known essential for correct description of the electrical property of GST. Our understanding of phonon modes in GST compounds paves the way for the improving the device performance especially in terms of switching speed and operating voltage.

Blackcomb: Hardware-Software Co-design for Non-Volatile Memory in Exascale Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schreiber, Robert

Summary of technical results of Blackcomb Memory Devices We explored various different memory technologies (STTRAM, PCRAM, FeRAM, and ReRAM). The progress can be classified into three categories, below. Modeling and Tool Releases Various modeling tools have been developed over the last decade to help in the design of SRAM or DRAM-based memory hierarchies. To explore new design opportunities that NVM technologies can bring to the designers, we have developed similar high-level models for NVM, including PCRAMsim [Dong 2009], NVSim [Dong 2012], and NVMain [Poremba 2012]. NVSim is a circuit-level model for NVM performance, energy, and area estimation, which supports variousmore » NVM technologies, including STT-RAM, PCRAM, ReRAM, and legacy NAND Flash. NVSim is successfully validated against industrial NVM prototypes, and it is expected to help boost architecture-level NVM-related studies. On the other side, NVMain is a cycle accurate main memory simulator designed to simulate emerging nonvolatile memories at the architectural level. We have released these models as open source tools and provided contiguous support to them. We also proposed PS3-RAM, which is a fast, portable and scalable statistical STT-RAM reliability analysis model [Wen 2012]. Design Space Exploration and Optimization With the support of these models, we explore different device/circuit optimization techniques. For example, in [Niu 2012a] we studied the power reduction technique for the application of ECC scheme in ReRAM designs and proposed to use ECC code to relax the BER (Bit Error Rate) requirement of a single memory to improve the write energy consumption and latency for both 1T1R and cross-point ReRAM designs. In [Xu 2011], we proposed a methodology to design STT-RAM for different optimization goals such as read performance, write performance and write energy by leveraging the trade-off between write current and write time of MTJ. We also studied the tradeoffs in building a reliable crosspoint ReRAM array [Niu 2012b]. We have conducted an in depth analysis of the circuit and system level design implications of multi-layer cross-point Resistive RAM (MLCReRAM) from performance, power and reliability perspectives [Xu 2013]. The objective of this study is to understand the design trade-offs of this technology with respect to the MLC Phase Change Memory (MLCPCM).Our MLC ReRAM design at the circuit and system levels indicates that different resistance allocation schemes, programming strategies, peripheral designs, and material selections profoundly affect the area, latency, power, and reliability of MLC ReRAM. Based on this analysis, we conduct two case studies: first we compare MLC ReRAM design against MLC phase-change memory (PCM) and multi-layer cross-point ReRAM design, and point out why multi-level ReRAM is appealing; second we further explore the design space for MLC ReRAM. Architecture and Application We explored hybrid checkpointing using phase-change memory for future exascale systems [Dong 2011] and showed that the use of nonvolatile memory for local checkpointing significantly increases the number of faults covered by local checkpoints and reduces the probability of a global failure in the middle of a global checkpoint to less than 1%. We also proposed a technique called i2WAP to mitigate the write variations in NVM-based last-level cache for the improvement of the NVM lifetime [Wang 2013]. Our wear leveling technique attempts to work around the limitations of write endurance by arranging data access so that write operations can be distributed evenly across all the storage cells. During our intensive research on fault-tolerant NVM design, we found that ECC cannot effectively tolerate hard errors from limited write endurance and process imperfection. Therefore, we devised a novel Point and Discard (PAD) architecture in in [ 2012] as a hard-error-tolerant architecture for ReRAM-based Last Level Caches. PAD improves the lifetime of ReRAM caches by 1.6X-440X under different process variations without performance overhead in the system's early life. We have investigated the applicability of NVM for persistent memory design [Zhao 2013]. New byte addressable NVM enables fast persistent memory that allows in-memory persistent data objects to be updated with much higher throughput. Despite the significant improvement, the performance of these designs is only 50% of the native system with no persistence support, due to the logging or copy-on-write mechanisms used to update the persistent memory. A challenge in this approach is therefore how to efficiently enable atomic, consistent, and durable updates to ensure data persistence that survives application and/or system failures. We have designed a persistent memory system, called Klin, that can provide performance as close as that of the native system. The Klin design adopts a non-volatile cache and a non-volatile main memory for constructing a multi-versioned durable memory system, enabling atomic updates without logging or copy-on-write. Our evaluation shows that the proposed Kiln mechanism can achieve up to 2X of performance improvement to NVRAM-based persistent memory employing write-ahead logging. In addition, our design has numerous practical advantages: a simple and intuitive abstract interface, microarchitecture-level optimizations, fast recovery from failures, and no redundant writes to slow non-volatile storage media. The work was published in MICRO 2013 and received Best Paper Honorable Mentioned Award.« less

Sb-Te Phase-change Materials under Nanoscale Confinement

NASA Astrophysics Data System (ADS)

Ihalawela, Chandrasiri A.

Size, speed and efficiency are the major challenges of next generation nonvolatile memory (NVM), and phase-change memory (PCM) has captured a great attention due to its promising features. The key for PCM is rapid and reversible switching between amorphous and crystalline phases with optical or electrical excitation. The structural transition is associated with significant contrast in material properties which can be utilized in optical (CD, DVD, BD) and electronic (PCRAM) memory applications. Importantly, both the functionality and the success of PCM technology significantly depend on the core material and its properties. So investigating PC materials is crucial for the development of PCM technology to realized enhanced solutions. In regards to PC materials, Sb-Te binary plays a significant role as a basis to the well-known Ge-Sb-Te system. Unlike the conventional deposition methods (sputtering, evaporation), electrochemical deposition method is used due to its multiple advantages, such as conformality, via filling capability, etc. First, the controllable synthesis of Sb-Te thin films was studied for a wide range of compositions using this novel deposition method. Secondly, the solid electrolytic nature of stoichiometric Sb2Te3 was studied with respect to precious metals. With the understanding of 2D thin film synthesis, Sb-Te 1D nanowires (18 - 220 nm) were synthesized using templated electrodeposition, where nanoporous anodic aluminum oxide (AAO) was used as a template for the growth of nanowires. In order to gain the controllability over the deposition in high aspect ratio structures, growth mechanisms of both the thin films and nanowires were investigated. Systematic understanding gained thorough previous studies helped to formulate the ultimate goal of this dissertation. In this dissertation, the main objective is to understand the size effect of PC materials on their phase transition properties. The reduction of effective memory cell size in conjunction with multilevel cells could be promising to achieve high data densities. However the size reduction may result in changes in material properties. If phase transition properties of the materials are also tunable with respect to the size, then more attractive solutions could be realized. So we have reported the size effect on crystallization temperature of prototypical Sb2Te3 nanowires synthesized in AAO templates. Moreover, we have found that the reduction of nanowire size can elevate the crystallization temperature, which is crucial for data retention in PCM technology. Energy dispersive X-ray spectroscopy, X-ray diffraction, electron microscopy and electrical resistivity measurements were used to characterize the composition, structure, morphology, and phase transition properties of the materials. We believe that this dissertation will provide new insights into the size effect of PC materials in addition to the controllable synthesis of PC thin films and nanowires through the novel electrochemical method.

Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices.

PubMed

Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

2016-01-25

Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm(-2)) compared with the melt-quench strategy (∼50 MA cm(-2)). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation.

Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

PubMed Central

Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

2016-01-01

Crystal–amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier–lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13–0.6 MA cm−2) compared with the melt-quench strategy (∼50 MA cm−2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation. PMID:26805748

Deformation and Phase Transformation Processes in Polycrystalline NiTi and NiTiHf High Temperature Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Benafan, Othmane

2012-01-01

The deformation and transformation mechanisms of polycrystalline Ni49.9Ti50.1 and Ni50.3Ti29.7Hf20 (in at.%) shape memory alloys were investigated by combined experimental and modeling efforts aided by an in situ neutron diffraction technique at stress and temperature. The thermomechanical response of the low temperature martensite, the high temperature austenite phases, and changes between these two states during thermomechanical cycling were probed and reported. In the cubic austenite phase, stress-induced martensite, deformation twinning and slip processes were observed which helped in constructing a deformation map that contained the limits over which each of the identified mechanisms was dominant. Deformation of the monoclinic martensitic phase was also investigated where the microstructural changes (texture, lattice strains, and phase fractions) during room-temperature deformation and subsequent thermal cycling were compared to the bulk macroscopic response. When cycling between these two phases, the evolution of inelastic strains, along with the shape setting procedures were examined and used for the optimization of the transformation properties as a function of deformation levels and temperatures. Finally, this work was extended to the development of multiaxial capabilities at elevated temperatures for the in situ neutron diffraction measurements of shape memory alloys on the VULCAN Diffractometer at Oak Ridge National Laboratory.

Intrahemispheric theta rhythm desynchronization impairs working memory.

PubMed

Alekseichuk, Ivan; Pabel, Stefanie Corinna; Antal, Andrea; Paulus, Walter

2017-01-01

There is a growing interest in large-scale connectivity as one of the crucial factors in working memory. Correlative evidence has revealed the anatomical and electrophysiological players in the working memory network, but understanding of the effective role of their connectivity remains elusive. In this double-blind, placebo-controlled study we aimed to identify the causal role of theta phase connectivity in visual-spatial working memory. The frontoparietal network was over- or de-synchronized in the anterior-posterior direction by multi-electrode, 6 Hz transcranial alternating current stimulation (tACS). A decrease in memory performance and increase in reaction time was caused by frontoparietal intrahemispheric desynchronization. According to the diffusion drift model, this originated in a lower signal-to-noise ratio, known as the drift rate index, in the memory system. The EEG analysis revealed a corresponding decrease in phase connectivity between prefrontal and parietal areas after tACS-driven desynchronization. The over-synchronization did not result in any changes in either the behavioral or electrophysiological levels in healthy participants. Taken together, we demonstrate the feasibility of manipulating multi-site large-scale networks in humans, and the disruptive effect of frontoparietal desynchronization on theta phase connectivity and visual-spatial working memory.

Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application

NASA Astrophysics Data System (ADS)

Zhu, Xiao-Qin; Zhang, Rui; Hu, Yi-Feng; Lai, Tian-Shu; Zhang, Jian-Hao; Zou, Hua; Song, Zhi-Tang

2018-05-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.

Structure and Properties of Ti-19.7Nb-5.8Ta Shape Memory Alloy Subjected to Thermomechanical Processing Including Aging

NASA Astrophysics Data System (ADS)

Dubinskiy, S.; Brailovski, Vladimir; Prokoshkin, S.; Pushin, V.; Inaekyan, K.; Sheremetyev, V.; Petrzhik, M.; Filonov, M.

2013-09-01

In this work, the ternary Ti-19.7Nb-5.8Ta (at.%) alloy for biomedical applications was studied. The ingot was manufactured by vacuum arc melting with a consumable electrode and then subjected to hot forging. Specimens were cut from the ingot and processed by cold rolling with e = 0.37 of logarithmic thickness reduction and post-deformation annealing (PDA) between 400 and 750 °C (1 h). Selected samples were subjected to aging at 300 °C (10 min to 3 h). The influence of the thermomechanical processing on the alloy's structure, phase composition, and mechanical and functional properties was studied. It was shown that thermomechanical processing leads to the formation of a nanosubgrained structure (polygonized with subgrains below 100 nm) in the 500-600 °C PDA range, which transforms to a recrystallized structure of β-phase when PDA temperature increases. Simultaneously, the phase composition and the β → α″ transformation kinetics vary. It was found that after conventional cold rolling and PDA, Ti-Nb-Ta alloy manifests superelastic and shape memory behaviors. During aging at 300 °C (1 h), an important quantity of randomly scattered equiaxed ω-precipitates forms, which results in improved superelastic cyclic properties. On the other hand, aging at 300 °C (3 h) changes the ω-precipitates' particle morphology from equiaxed to elongated and leads to their coarsening, which negatively affects the superelastic and shape memory functional properties of Ti-Nb-Ta alloy.

[Effect of alcohol on electrical organisation in the brain during a visuospatial working memory task and its relationship with the menstrual cycle].

PubMed

Sanz-Martin, Araceli; Hernández-González, Marisela; Guevara, Miguel Ángel; Santana, Gloria; Gumá-Díaz, Emilio

2014-02-01

The metabolism of alcohol and cognitive functions can vary during the menstrual cycle. Also, both alcohol ingestion and hormonal variations during menstruation have been associated with characteristic changes in electroencephalographic (EEG) activity. AIM. To determine whether EEG activity during a working memory task is affected by acute alcohol consumption, and if these EEG patterns vary in relation to different phases of the menstrual cycle. 24 women who drank a moderate dose of alcohol or placebo during the follicular and early luteal phases of the menstrual cycle. The EEG activity was recorded during performance of viso-spatial working memory task. Although the alcohol did not deteriorate the performance of working memory task, it caused in the EEG a decrease of relative theta power and lower right fronto-parietal correlation in theta and alpha2 bands. Only women who drank alcohol in the follicular phase had a higher relative potency of alpha1, which could indicate a lower level of arousal and attention. These results contribute to a better understanding of the brain mechanisms underlying cognitive changes with alcohol and its relationship to the menstrual cycle.

Music training is associated with cortical synchronization reflected in EEG coherence during verbal memory encoding.

PubMed

Cheung, Mei-Chun; Chan, Agnes S; Liu, Ying; Law, Derry; Wong, Christina W Y

2017-01-01

Music training can improve cognitive functions. Previous studies have shown that children and adults with music training demonstrate better verbal learning and memory performance than those without such training. Although prior studies have shown an association between music training and changes in the structural and functional organization of the brain, there is no concrete evidence of the underlying neural correlates of the verbal memory encoding phase involved in such enhanced memory performance. Therefore, we carried out an electroencephalography (EEG) study to investigate how music training was associated with brain activity during the verbal memory encoding phase. Sixty participants were recruited, 30 of whom had received music training for at least one year (the MT group) and 30 of whom had never received music training (the NMT group). The participants in the two groups were matched for age, education, gender distribution, and cognitive capability. Their verbal and visual memory functions were assessed using standardized neuropsychological tests and EEG was used to record their brain activity during the verbal memory encoding phase. Consistent with previous studies, the MT group demonstrated better verbal memory than the NMT group during both the learning and the delayed recall trials in the paper-and-pencil tests. The MT group also exhibited greater learning capacity during the learning trials. Compared with the NMT group, the MT group showed an increase in long-range left and right intrahemispheric EEG coherence in the theta frequency band during the verbal memory encoding phase. In addition, their event-related left intrahemispheric theta coherence was positively associated with subsequent verbal memory performance as measured by discrimination scores. These results suggest that music training may modulate the cortical synchronization of the neural networks involved in verbal memory formation.

Music training is associated with cortical synchronization reflected in EEG coherence during verbal memory encoding

PubMed Central

Cheung, Mei-chun; Chan, Agnes S.; Liu, Ying; Law, Derry; Wong, Christina W. Y.

2017-01-01

Music training can improve cognitive functions. Previous studies have shown that children and adults with music training demonstrate better verbal learning and memory performance than those without such training. Although prior studies have shown an association between music training and changes in the structural and functional organization of the brain, there is no concrete evidence of the underlying neural correlates of the verbal memory encoding phase involved in such enhanced memory performance. Therefore, we carried out an electroencephalography (EEG) study to investigate how music training was associated with brain activity during the verbal memory encoding phase. Sixty participants were recruited, 30 of whom had received music training for at least one year (the MT group) and 30 of whom had never received music training (the NMT group). The participants in the two groups were matched for age, education, gender distribution, and cognitive capability. Their verbal and visual memory functions were assessed using standardized neuropsychological tests and EEG was used to record their brain activity during the verbal memory encoding phase. Consistent with previous studies, the MT group demonstrated better verbal memory than the NMT group during both the learning and the delayed recall trials in the paper-and-pencil tests. The MT group also exhibited greater learning capacity during the learning trials. Compared with the NMT group, the MT group showed an increase in long-range left and right intrahemispheric EEG coherence in the theta frequency band during the verbal memory encoding phase. In addition, their event-related left intrahemispheric theta coherence was positively associated with subsequent verbal memory performance as measured by discrimination scores. These results suggest that music training may modulate the cortical synchronization of the neural networks involved in verbal memory formation. PMID:28358852

Self-Repairing Fatigue Damage in Metallic Structures for Aerospace Vehicles Using Shape Memory Alloy Self-healing (SMASH) Technology

NASA Technical Reports Server (NTRS)

Wright, M. Clara; Manuel, Michele; Wallace, Terryl; Newman, Andy; Brinson, Kate

2015-01-01

This DAA is for the Phase II webinar presentation of the ARMD-funded SMASH technology. A self-repairing aluminum-based composite system has been developed using liquid-assisted healing theory in conjunction with the shape memory effect of wire reinforcements. The metal matrix composite was thermodynamically designed to have a matrix with a relatively even dispersion of low-melting phase, allowing for repair of cracks at a pre-determined temperature. Shape memory alloy wire reinforcements were used within the composite to provide crack closure. Investigators focused the research on fatigue cracks propagating through the matrix in order to optimize and computer model the SMASH technology for aeronautical applications.

Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2.

PubMed

Ma, J; Delaire, O; May, A F; Carlton, C E; McGuire, M A; VanBebber, L H; Abernathy, D L; Ehlers, G; Hong, Tao; Huq, A; Tian, Wei; Keppens, V M; Shao-Horn, Y; Sales, B C

2013-06-01

Materials with very low thermal conductivity are of great interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising for suppressing thermal conductivity through phonon scattering, but challenges remain in producing bulk samples. In crystalline AgSbTe2 we show that a spontaneously forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mapping of the phonon mean free paths provides a novel bottom-up microscopic account of thermal conductivity and also reveals intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and suggests a new avenue for the nanoscale engineering of materials to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

Simulation studies of GST phase change alloys

NASA Astrophysics Data System (ADS)

Martyna, Glenn

2008-03-01

In order to help drive post-Moore's Law technology development, switching processes involving novel materials, in particular, GeSbTe (GST) alloys are being investigated for use in memory and eFuse applications. An anneal/quench thermal process crystallizes/amorphosizes a GST alloy which then has a low/high resistance and thereby forms a readable/writeable bit; for example, a ``one'' might be the low resistance, conducting crystalline state and a ``zero'' might be the high resistance, glassy state. There are many open questions about the precise nature of the structural transitions and the coupling to electronic structure changes. Computational and experimental studies of the effect of pressure on the GST materials were initiated in order to probe the physics behind the thermal switching process. A new pathway to reversible phase change involving pressure-induced structural metal insulator transitions was discovered. In a binary GS system, a room-temperature, direct, pressure-induced transformation from the high resistance amorphous phase to the low resistance crystalline phase was observed experimentally while the reverse process under tensile load was demonstrated via ab initio MD simulations performed on IBM's Blue Gene/L enabled by massively parallel software. Pressure induced transformations of the ternary material GST-225 (Ge2Sb2Te5) were, also, examined In the talk, the behavior of the two systems will be compared and insight into the nature of the phase change given.

Phase-image-based content-addressable holographic data storage

NASA Astrophysics Data System (ADS)

John, Renu; Joseph, Joby; Singh, Kehar

2004-03-01

We propose and demonstrate the use of phase images for content-addressable holographic data storage. Use of binary phase-based data pages with 0 and π phase changes, produces uniform spectral distribution at the Fourier plane. The absence of strong DC component at the Fourier plane and more intensity of higher order spatial frequencies facilitate better recording of higher spatial frequencies, and improves the discrimination capability of the content-addressable memory. This improves the results of the associative recall in a holographic memory system, and can give low number of false hits even for small search arguments. The phase-modulated pixels also provide an opportunity of subtraction among data pixels leading to better discrimination between similar data pages.

High-throughput state-machine replication using software transactional memory.

PubMed

Zhao, Wenbing; Yang, William; Zhang, Honglei; Yang, Jack; Luo, Xiong; Zhu, Yueqin; Yang, Mary; Luo, Chaomin

2016-11-01

State-machine replication is a common way of constructing general purpose fault tolerance systems. To ensure replica consistency, requests must be executed sequentially according to some total order at all non-faulty replicas. Unfortunately, this could severely limit the system throughput. This issue has been partially addressed by identifying non-conflicting requests based on application semantics and executing these requests concurrently. However, identifying and tracking non-conflicting requests require intimate knowledge of application design and implementation, and a custom fault tolerance solution developed for one application cannot be easily adopted by other applications. Software transactional memory offers a new way of constructing concurrent programs. In this article, we present the mechanisms needed to retrofit existing concurrency control algorithms designed for software transactional memory for state-machine replication. The main benefit for using software transactional memory in state-machine replication is that general purpose concurrency control mechanisms can be designed without deep knowledge of application semantics. As such, new fault tolerance systems based on state-machine replications with excellent throughput can be easily designed and maintained. In this article, we introduce three different concurrency control mechanisms for state-machine replication using software transactional memory, namely, ordered strong strict two-phase locking, conventional timestamp-based multiversion concurrency control, and speculative timestamp-based multiversion concurrency control. Our experiments show that speculative timestamp-based multiversion concurrency control mechanism has the best performance in all types of workload, the conventional timestamp-based multiversion concurrency control offers the worst performance due to high abort rate in the presence of even moderate contention between transactions. The ordered strong strict two-phase locking mechanism offers the simplest solution with excellent performance in low contention workload, and fairly good performance in high contention workload.

High-throughput state-machine replication using software transactional memory

PubMed Central

Yang, William; Zhang, Honglei; Yang, Jack; Luo, Xiong; Zhu, Yueqin; Yang, Mary; Luo, Chaomin

2017-01-01

State-machine replication is a common way of constructing general purpose fault tolerance systems. To ensure replica consistency, requests must be executed sequentially according to some total order at all non-faulty replicas. Unfortunately, this could severely limit the system throughput. This issue has been partially addressed by identifying non-conflicting requests based on application semantics and executing these requests concurrently. However, identifying and tracking non-conflicting requests require intimate knowledge of application design and implementation, and a custom fault tolerance solution developed for one application cannot be easily adopted by other applications. Software transactional memory offers a new way of constructing concurrent programs. In this article, we present the mechanisms needed to retrofit existing concurrency control algorithms designed for software transactional memory for state-machine replication. The main benefit for using software transactional memory in state-machine replication is that general purpose concurrency control mechanisms can be designed without deep knowledge of application semantics. As such, new fault tolerance systems based on state-machine replications with excellent throughput can be easily designed and maintained. In this article, we introduce three different concurrency control mechanisms for state-machine replication using software transactional memory, namely, ordered strong strict two-phase locking, conventional timestamp-based multiversion concurrency control, and speculative timestamp-based multiversion concurrency control. Our experiments show that speculative timestamp-based multiversion concurrency control mechanism has the best performance in all types of workload, the conventional timestamp-based multiversion concurrency control offers the worst performance due to high abort rate in the presence of even moderate contention between transactions. The ordered strong strict two-phase locking mechanism offers the simplest solution with excellent performance in low contention workload, and fairly good performance in high contention workload. PMID:29075049

The Effect of SiC Polytypes on the Heat Distribution Efficiency of a Phase Change Memory.

NASA Astrophysics Data System (ADS)

Aziz, M. S.; Mohammed, Z.; Alip, R. I.

2018-03-01

The amorphous to crystalline transition of germanium-antimony-tellurium (GST) using three types of silicon carbide’s structure as a heating element was investigated. Simulation was done using COMSOL Multiphysic 5.0 software with separate heater structure. Silicon carbide (SiC) has three types of structure; 3C-SiC, 4H-SiC and 6H-SiC. These structures have a different thermal conductivity. The temperature of GST and phase transition of GST can be obtained from the simulation. The temperature of GST when using 3C-SiC, 4H-SiC and 6H-SiC are 467K, 466K and 460K, respectively. The phase transition of GST from amorphous to crystalline state for three type of SiC’s structure can be determined in this simulation. Based on the result, the thermal conductivity of SiC can affecting the temperature of GST and changed of phase change memory (PCM).

Efficient and flexible memory architecture to alleviate data and context bandwidth bottlenecks of coarse-grained reconfigurable arrays

NASA Astrophysics Data System (ADS)

Yang, Chen; Liu, LeiBo; Yin, ShouYi; Wei, ShaoJun

2014-12-01

The computational capability of a coarse-grained reconfigurable array (CGRA) can be significantly restrained due to data and context memory bandwidth bottlenecks. Traditionally, two methods have been used to resolve this problem. One method loads the context into the CGRA at run time. This method occupies very small on-chip memory but induces very large latency, which leads to low computational efficiency. The other method adopts a multi-context structure. This method loads the context into the on-chip context memory at the boot phase. Broadcasting the pointer of a set of contexts changes the hardware configuration on a cycle-by-cycle basis. The size of the context memory induces a large area overhead in multi-context structures, which results in major restrictions on application complexity. This paper proposes a Predictable Context Cache (PCC) architecture to address the above context issues by buffering the context inside a CGRA. In this architecture, context is dynamically transferred into the CGRA. Utilizing a PCC significantly reduces the on-chip context memory and the complexity of the applications running on the CGRA is no longer restricted by the size of the on-chip context memory. Data preloading is the most frequently used approach to hide input data latency and speed up the data transmission process for the data bandwidth issue. Rather than fundamentally reducing the amount of input data, the transferred data and computations are processed in parallel. However, the data preloading method cannot work efficiently because data transmission becomes the critical path as the reconfigurable array scale increases. This paper also presents a Hierarchical Data Memory (HDM) architecture as a solution to the efficiency problem. In this architecture, high internal bandwidth is provided to buffer both reused input data and intermediate data. The HDM architecture relieves the external memory from the data transfer burden so that the performance is significantly improved. As a result of using PCC and HDM, experiments running mainstream video decoding programs achieved performance improvements of 13.57%-19.48% when there was a reasonable memory size. Therefore, 1080p@35.7fps for H.264 high profile video decoding can be achieved on PCC and HDM architecture when utilizing a 200 MHz working frequency. Further, the size of the on-chip context memory no longer restricted complex applications, which were efficiently executed on the PCC and HDM architecture.

Precipitation-Strengthened, High-Temperature, High-Force Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Noebe, Ronald D.; Draper, Susan L.; Nathal, Michael V.; Crombie, Edwin A.

2008-01-01

Shape memory alloys (SMAs) are an enabling component in the development of compact, lightweight, durable, high-force actuation systems particularly for use where hydraulics or electrical motors are not practical. However, commercial shape memory alloys based on NiTi are only suitable for applications near room temperature, due to their relatively low transformation temperatures, while many potential applications require higher temperature capability. Consequently, a family of (Ni,Pt)(sub 1-x)Ti(sub x) shape memory alloys with Ti concentrations ranging from about 15 to 25 at.% have been developed for applications in which there are requirements for SMA actuators to exert high forces at operating temperatures higher than those of conventional binary NiTi SMAs. These alloys can be heat treated in the range of 500 C to produce a series of fine precipitate phases that increase the strength of alloy while maintaining a high transformation temperature, even in Ti-lean compositions.

The transience and nature of cognitive impairments in transient global amnesia: a meta-analysis.

PubMed

Jäger, Theodor; Bäzner, Hansjörg; Kliegel, Matthias; Szabo, Kristina; Hennerici, Michael G

2009-01-01

Transient global amnesia (TGA) is a clinical syndrome characterized by the sudden onset of severe amnesia without concomitant focal neurological symptoms. This meta-analysis of the cognitive characteristics of TGA addressed two main issues. First, we examined the hypothesis that the acute phase of TGA is associated with changes of anterograde and retrograde episodic long-term memory sparing semantic and short-term memory, while we had no clear prediction for potential reductions of executive functions due to the relative lack of previous studies addressing this issue. Second, we analyzed the time-course of changes in cognitive functions throughout three time intervals--acute (0-24 hours after TGA onset), postacute (24 hours to 5 days), and long-term phase (5-30 days)--to reveal whether there is a fast versus a delayed recovery. The results of the meta-analysis on 152 effect sizes from 25 studies showed that TGA is characterized by an extraordinarily large reduction of anterograde (d* = 1.89) and a somewhat milder reduction of retrograde (d* = 1.28) episodic long-term memory. Moreover, our results indicate the existence of additional, nonamnestic cognitive changes during TGA, because executive functions were also diminished (d* = 0.79). Reductions in both anterograde episodic long-term memory and executive function recover slowly, as slightly poorer performance in these cognitive domains can be found in the postacute phase (d*s = 0.32 and 0.44). All cognitive diminutions resolved within the long-term phase, by this calling into question previous reports of poorer performance of TGA patients relative to comparison subjects weeks or months after the attack.

Proton Irradiation of the 16GB Intel Optane SSD

NASA Technical Reports Server (NTRS)

Wyrwas, E. J.

2017-01-01

The purpose of this test is to assess the single event effects (SEE) and radiation susceptibility of the Intel Optane Memory device (SSD) containing the 3D Xpoint phase change memory (PCM) technology. This test is supported by the NASA Electronics Parts and Packaging Program (NEPP).

Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Durai, Suresh; Manivannan, Anbarasu

2016-11-01

Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature of enabling a rapid threshold-switching at a critical voltage known as the threshold voltage as validated by an instantaneous response of steep current rise from an amorphous off to on state is achieved within 250 picoseconds and this is followed by a slower current rise leading to crystallization. Also, we demonstrate that the extraordinary nature of threshold-switching dynamics in AgInSbTe cells is independent to the rate of applied voltage unlike other chalcogenide-based phase change materials exhibiting the voltage dependent transient switching characteristics. Furthermore, numerical solutions of time-dependent conduction process validate the experimental results, which reveal the electronic nature of threshold-switching. These findings of steep threshold-switching of ‘sub-50 ps delay time’, opens up a new way for achieving high-speed non-volatile memory for mainstream computing.

Fast-responding bio-based shape memory thermoplastic polyurethanes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrovic, Zoran S.; Milic, Jelena; Zhang, Fan

Fast response shape-memory polyurethanes were prepared from bio-based polyols, diphenyl methane diisocyanate and butane diol. The bio-based polyester polyols were synthesized from 9-hydroxynonanoic acid, a product obtained by ozonolysis of fatty acids extracted from soy oil and castor oil. The morphology of polyurethanes was investigated by synchrotron ultra-small angle X-ray scattering, which revealed the inter-domain spacing between the hard and soft phases, the degree of phase separation, and the level of intermixing between the hard and soft phases. We also conducted thorough investigations of the thermal, mechanical, and dielectric properties of the polyurethanes, and found that high crystallization rate ofmore » the soft segment gives these polyurethanes unique properties suitable for shapememory applications, such as adjustable transition temperatures, high degree of elastic elongations, and good mechanical strength. In conclusion, these materials are also potentially biodegradable and biocompatible, therefore suitable for biomedical and environmental applications.« less

Fast-responding bio-based shape memory thermoplastic polyurethanes

DOE PAGES

Petrovic, Zoran S.; Milic, Jelena; Zhang, Fan; ...

2017-05-31

Fast response shape-memory polyurethanes were prepared from bio-based polyols, diphenyl methane diisocyanate and butane diol. The bio-based polyester polyols were synthesized from 9-hydroxynonanoic acid, a product obtained by ozonolysis of fatty acids extracted from soy oil and castor oil. The morphology of polyurethanes was investigated by synchrotron ultra-small angle X-ray scattering, which revealed the inter-domain spacing between the hard and soft phases, the degree of phase separation, and the level of intermixing between the hard and soft phases. We also conducted thorough investigations of the thermal, mechanical, and dielectric properties of the polyurethanes, and found that high crystallization rate ofmore » the soft segment gives these polyurethanes unique properties suitable for shapememory applications, such as adjustable transition temperatures, high degree of elastic elongations, and good mechanical strength. In conclusion, these materials are also potentially biodegradable and biocompatible, therefore suitable for biomedical and environmental applications.« less

Scientific developments of liquid crystal-based optical memory: a review

NASA Astrophysics Data System (ADS)

Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Scientific developments of liquid crystal-based optical memory: a review.

PubMed

Prakash, Jai; Chandran, Achu; Biradar, Ashok M

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

FPGA-based prototype storage system with phase change memory

NASA Astrophysics Data System (ADS)

Li, Gezi; Chen, Xiaogang; Chen, Bomy; Li, Shunfen; Zhou, Mi; Han, Wenbing; Song, Zhitang

2016-10-01

With the ever-increasing amount of data being stored via social media, mobile telephony base stations, and network devices etc. the database systems face severe bandwidth bottlenecks when moving vast amounts of data from storage to the processing nodes. At the same time, Storage Class Memory (SCM) technologies such as Phase Change Memory (PCM) with unique features like fast read access, high density, non-volatility, byte-addressability, positive response to increasing temperature, superior scalability, and zero standby leakage have changed the landscape of modern computing and storage systems. In such a scenario, we present a storage system called FLEET which can off-load partial or whole SQL queries to the storage engine from CPU. FLEET uses an FPGA rather than conventional CPUs to implement the off-load engine due to its highly parallel nature. We have implemented an initial prototype of FLEET with PCM-based storage. The results demonstrate that significant performance and CPU utilization gains can be achieved by pushing selected query processing components inside in PCM-based storage.

Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

NASA Astrophysics Data System (ADS)

Gong, Yue-Feng; Song, Zhi-Tang; Ling, Yun; Liu, Yan; Li, Yi-Jin

2010-06-01

A three-dimensional finite element model for phase change random access memory is established to simulate electric, thermal and phase state distribution during (SET) operation. The model is applied to simulate the SET behaviors of the heater addition structure (HS) and the ring-type contact in the bottom electrode (RIB) structure. The simulation results indicate that the small bottom electrode contactor (BEC) is beneficial for heat efficiency and reliability in the HS cell, and the bottom electrode contactor with size Fx = 80 nm is a good choice for the RIB cell. Also shown is that the appropriate SET pulse time is 100 ns for the low power consumption and fast operation.

YOCAS©® Yoga Reduces Self-reported Memory Difficulty in Cancer Survivors in a Nationwide Randomized Clinical Trial: Investigating Relationships Between Memory and Sleep.

PubMed

Janelsins, Michelle C; Peppone, Luke J; Heckler, Charles E; Kesler, Shelli R; Sprod, Lisa K; Atkins, James; Melnik, Marianne; Kamen, Charles; Giguere, Jeffrey; Messino, Michael J; Mohile, Supriya G; Mustian, Karen M

2016-09-01

Background Interventions are needed to alleviate memory difficulty in cancer survivors. We previously showed in a phase III randomized clinical trial that YOCAS©® yoga-a program that consists of breathing exercises, postures, and meditation-significantly improved sleep quality in cancer survivors. This study assessed the effects of YOCAS©® on memory and identified relationships between memory and sleep. Survivors were randomized to standard care (SC) or SC with YOCAS©® . 328 participants who provided data on the memory difficulty item of the MD Anderson Symptom Inventory are included. Sleep quality was measured using the Pittsburgh Sleep Quality Index. General linear modeling (GLM) determined the group effect of YOCAS©® on memory difficulty compared with SC. GLM also determined moderation of baseline memory difficulty on postintervention sleep and vice versa. Path modeling assessed the mediating effects of changes in memory difficulty on YOCAS©® changes in sleep and vice versa. YOCAS©® significantly reduced memory difficulty at postintervention compared with SC (mean change: yoga=-0.60; SC=-0.16; P<.05). Baseline memory difficulty did not moderate the effects of postintervention sleep quality in YOCAS©® compared with SC. Baseline sleep quality did moderate the effects of postintervention memory difficulty in YOCAS©® compared with SC (P<.05). Changes in sleep quality was a significant mediator of reduced memory difficulty in YOCAS©® compared with SC (P<.05); however, changes in memory difficulty did not significantly mediate improved sleep quality in YOCAS©® compared with SC. In this large nationwide trial, YOCAS©® yoga significantly reduced patient-reported memory difficulty in cancer survivors. © The Author(s) 2015.

Phase-Change Thermoplastic Elastomer Blends for Tunable Shape Memory by Physical Design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mineart, Kenneth P.; Tallury, Syamal S.; Li, Tao

Shape-memory polymers (SMPs) change shape upon exposure to an environmental stimulus.1-3 They are of considerable importance in the ongoing development of stimuli-responsive biomedical4,5 and deployable6 devices, and their function depends on the presence of two components.7 The first provides mechanical rigidity to ensure retention of one or more temporary strain states and also serves as a switch capable of releasing a temporary strain state. The second, a network-forming component, is required to restore the polymer to a prior strain state upon stimulation. In thermally-activated SMPs, the switching element typically relies on a melting or glass transition temperature,1-3,7 and broad ormore » multiple switches permit several temporary strain states.8-10 Chemical integration of network-forming and switching species endows SMPs with specific properties.8,10,11 Here, we demonstrate that phase-change materials incorporated into network-forming macromolecules yield shape-memory polymer blends (SMPBs) with physically tunable switching temperatures and recovery kinetics for use in multi-responsive laminates and shape-change electronics.« less

Declarative and Non-declarative Memory Consolidation in Children with Sleep Disorder.

PubMed

Csábi, Eszter; Benedek, Pálma; Janacsek, Karolina; Zavecz, Zsófia; Katona, Gábor; Nemeth, Dezso

2015-01-01

Healthy sleep is essential in children's cognitive, behavioral, and emotional development. However, remarkably little is known about the influence of sleep disorders on different memory processes in childhood. Such data could give us a deeper insight into the effect of sleep on the developing brain and memory functions and how the relationship between sleep and memory changes from childhood to adulthood. In the present study we examined the effect of sleep disorder on declarative and non-declarative memory consolidation by testing children with sleep-disordered breathing (SDB) which is characterized by disrupted sleep structure. We used a story recall task to measure declarative memory and Alternating Serial Reaction time (ASRT) task to assess non-declarative memory. This task enables us to measure two aspects of non-declarative memory, namely general motor skill learning and sequence-specific learning. There were two sessions: a learning phase and a testing phase, separated by a 12 h offline period with sleep. Our data showed that children with SDB exhibited a generally lower declarative memory performance both in the learning and testing phase; however, both the SDB and control groups exhibited retention of the previously recalled items after the offline period. Here we showed intact non-declarative consolidation in SDB group in both sequence-specific and general motor skill. These findings suggest that sleep disorders in childhood have a differential effect on different memory processes (online vs. offline) and give us insight into how sleep disturbances affects developing brain.

Declarative and Non-declarative Memory Consolidation in Children with Sleep Disorder

PubMed Central

Csábi, Eszter; Benedek, Pálma; Janacsek, Karolina; Zavecz, Zsófia; Katona, Gábor; Nemeth, Dezso

2016-01-01

Healthy sleep is essential in children’s cognitive, behavioral, and emotional development. However, remarkably little is known about the influence of sleep disorders on different memory processes in childhood. Such data could give us a deeper insight into the effect of sleep on the developing brain and memory functions and how the relationship between sleep and memory changes from childhood to adulthood. In the present study we examined the effect of sleep disorder on declarative and non-declarative memory consolidation by testing children with sleep-disordered breathing (SDB) which is characterized by disrupted sleep structure. We used a story recall task to measure declarative memory and Alternating Serial Reaction time (ASRT) task to assess non-declarative memory. This task enables us to measure two aspects of non-declarative memory, namely general motor skill learning and sequence-specific learning. There were two sessions: a learning phase and a testing phase, separated by a 12 h offline period with sleep. Our data showed that children with SDB exhibited a generally lower declarative memory performance both in the learning and testing phase; however, both the SDB and control groups exhibited retention of the previously recalled items after the offline period. Here we showed intact non-declarative consolidation in SDB group in both sequence-specific and general motor skill. These findings suggest that sleep disorders in childhood have a differential effect on different memory processes (online vs. offline) and give us insight into how sleep disturbances affects developing brain. PMID:26793090

Facilitation of memory encoding in primate hippocampus by a neuroprosthesis that promotes task-specific neural firing

NASA Astrophysics Data System (ADS)

Hampson, Robert E.; Song, Dong; Opris, Ioan; Santos, Lucas M.; Shin, Dae C.; Gerhardt, Greg A.; Marmarelis, Vasilis Z.; Berger, Theodore W.; Deadwyler, Sam A.

2013-12-01

Objective. Memory accuracy is a major problem in human disease and is the primary factor that defines Alzheimer’s, ageing and dementia resulting from impaired hippocampal function in the medial temporal lobe. Development of a hippocampal memory neuroprosthesis that facilitates normal memory encoding in nonhuman primates (NHPs) could provide the basis for improving memory in human disease states. Approach. NHPs trained to perform a short-term delayed match-to-sample (DMS) memory task were examined with multi-neuron recordings from synaptically connected hippocampal cell fields, CA1 and CA3. Recordings were analyzed utilizing a previously developed nonlinear multi-input multi-output (MIMO) neuroprosthetic model, capable of extracting CA3-to-CA1 spatiotemporal firing patterns during DMS performance. Main results. The MIMO model verified that specific CA3-to-CA1 firing patterns were critical for the successful encoding of sample phase information on more difficult DMS trials. This was validated by the delivery of successful MIMO-derived encoding patterns via electrical stimulation to the same CA1 recording locations during the sample phase which facilitated task performance in the subsequent, delayed match phase, on difficult trials that required more precise encoding of sample information. Significance. These findings provide the first successful application of a neuroprosthesis designed to enhance and/or repair memory encoding in primate brain.

Facilitation of Memory Encoding in Primate Hippocampus by a Neuroprosthesis that Promotes Task Specific Neural Firing

PubMed Central

Hampson, Robert E.; Song, Dong; Opris, Ioan; Santos, Lucas M.; Shin, Dae C.; Gerhardt, Greg A.; Marmarelis, Vasilis Z.; Berger, Theodore W.; Deadwyler, Sam A.

2014-01-01

Objective Memory accuracy is a major problem in human disease and is the primary factor that defines Alzheimer’s’, aging and dementia resulting from impaired hippocampal function in medial temporal lobe. Development of a hippocampal memory neuroprosthesis that facilitates normal memory encoding in nonhuman primates (NHPs) could provide the basis for improving memory in human disease states. Approach NHPs trained to perform a short-term delayed match to sample (DMS) memory task were examined with multi-neuron recordings from synaptically connected hippocampal cell fields, CA1 and CA3. Recordings were analyzed utilizing a previously developed nonlinear multi-input multi-output (MIMO) neuroprosthetic model, capable of extracting CA3-to-CA1 spatiotemporal firing patterns during DMS performance. Main Results The MIMO model verified that specific CA3-to-CA1 firing patterns were critical for successful encoding of Sample phase information on more difficult DMS trials. This was validated by delivery of successful MIMO-derived encoding patterns via electrical stimulation to the same CA1 recording locations during the Sample phase which facilitated task performance in the subsequent delayed Match phase on difficult trials that required more precise encoding of Sample information. Significance These findings provide the first successful application of a neuroprosthesis designed to enhance and/or repair memory encoding in primate brain. PMID:24216292

An x-ray absorption spectroscopy study of Ni-Mn-Ga shape memory alloys.

PubMed

Sathe, V G; Dubey, Aditi; Banik, Soma; Barman, S R; Olivi, L

2013-01-30

The austenite to martensite phase transition in Ni-Mn-Ga ferromagnetic shape memory alloys was studied by extended x-ray absorption fine structure (EXAFS) and x-ray absorption near-edge structure (XANES) spectroscopy. The spectra at all the three elements', namely, Mn, Ga and Ni, K-edges in several Ni-Mn-Ga samples (with both Ni and Mn excess) were analyzed at room temperature and low temperatures. The EXAFS analysis suggested a displacement of Mn and Ga atoms in opposite direction with respect to the Ni atoms when the compound transforms from the austenite phase to the martensite phase. The first coordination distances around the Mn and Ga atoms remained undisturbed on transition, while the second and subsequent shells showed dramatic changes indicating the presence of a modulated structure. The Mn rich compounds showed the presence of antisite disorder of Mn and Ga. The XANES results showed remarkable changes in the unoccupied partial density of states corresponding to Mn and Ni, while the electronic structure of Ga remained unperturbed across the martensite transition. The post-edge features in the Mn K-edge XANES spectra changed from a double peak like structure to a flat peak like structure upon phase transition. The study establishes strong correlation between the crystal structure and the unoccupied electronic structure in these shape memory alloys.

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice

NASA Astrophysics Data System (ADS)

Shirakawa, Hiroki; Araidai, Masaaki; Shiraishi, Kenji

2018-04-01

The interfacial phase change memory (iPCM) based on a GeTe/Sb2Te3 superlattice is one of the candidates for future storage class memories. However, the atomic structures of the high and low resistance states (HRS/LRS) remain unclear and the resistive switching mechanism is still under debate. Clarifying the switching mechanism is essential for developing further high-reliability and low-power-consumption iPCM. We propose, on the basis of the results of first-principles molecular dynamics simulations, a mechanism for resistive switching, and describe the atomic structures of the high and low resistance states of iPCM for unipolar switching. Our simulations indicated that switching from HRS to LRS occurs with Joule heating only, while that from LRS to HRS occurs with both hole injection and Joule heating.

Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

PubMed

Mio, Antonio M; Privitera, Stefania M S; Bragaglia, Valeria; Arciprete, Fabrizio; Bongiorno, Corrado; Calarco, Raffaella; Rimini, Emanuele

2017-02-10

The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge 2 Sb 2 Te 5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge 3 Sb 2 Te 6 , Ge 2 Sb 2 Te 5 , and GeSb 2 Te 4 , alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge 2 Sb 2 Te 5 , the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories and in their data retention.

Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys

NASA Astrophysics Data System (ADS)

Vinod, E. M.; Ramesh, K.; Sangunni, K. S.

2015-01-01

Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl structure around 150°C and then to a stable hexagonal structure at high temperatures (>=250°C). It has been generally understood that the phase change takes place between amorphous and the metastable NaCl structure and not between the amorphous and the stable hexagonal phase. In the present work, it is observed that the thermally evaporated (GST)1-xSex thin films (0 <= x <= 0.50) crystallize directly to the stable hexagonal structure for x >= 0.10, when annealed at temperatures >= 150°C. The intermediate NaCl structure has been observed only for x < 0.10. Chemically ordered network of GST is largely modified for x >= 0.10. Resistance, thermal stability and threshold voltage of the films are found to increase with the increase of Se. The contrast in electrical resistivity between the amorphous and crystalline phases is about 6 orders of magnitude. The increase in Se shifts the absorption edge to lower wavelength and the band gap widens from 0.63 to 1.05 eV. Higher resistance ratio, higher crystallization temperature, direct transition to the stable phase indicate that (GST)1-xSex films are better candidates for phase change memory applications.

Biodegradable Shape Memory Polymers in Medicine.

PubMed

Peterson, Gregory I; Dobrynin, Andrey V; Becker, Matthew L

2017-11-01

Shape memory materials have emerged as an important class of materials in medicine due to their ability to change shape in response to a specific stimulus, enabling the simplification of medical procedures, use of minimally invasive techniques, and access to new treatment modalities. Shape memory polymers, in particular, are well suited for such applications given their excellent shape memory performance, tunable materials properties, minimal toxicity, and potential for biodegradation and resorption. This review provides an overview of biodegradable shape memory polymers that have been used in medical applications. The majority of biodegradable shape memory polymers are based on thermally responsive polyesters or polymers that contain hydrolyzable ester linkages. These materials have been targeted for use in applications pertaining to embolization, drug delivery, stents, tissue engineering, and wound closure. The development of biodegradable shape memory polymers with unique properties or responsiveness to novel stimuli has the potential to facilitate the optimization and development of new medical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

NASA Astrophysics Data System (ADS)

Phatak, C.; Petford-Long, A. K.; Beleggia, M.; De Graef, M.

2014-06-01

Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

Potential High-Temperature Shape-Memory Alloys Identified in the Ti(Ni,Pt) System

NASA Technical Reports Server (NTRS)

Noebe, Ronald D.; Biles, Tiffany A.; Garg, Anita; Nathal, Michael V.

2004-01-01

"Shape memory" is a unique property of certain alloys that, when deformed (within certain strain limits) at low temperatures, will remember and recover to their original predeformed shape upon heating. It occurs when an alloy is deformed in the low-temperature martensitic phase and is then heated above its transformation temperature back to an austenitic state. As the material passes through this solid-state phase transformation on heating, it also recovers its original shape. This behavior is widely exploited, near room temperature, in commercially available NiTi alloys for connectors, couplings, valves, actuators, stents, and other medical and dental devices. In addition, there are limitless applications in the aerospace, automotive, chemical processing, and many other industries for materials that exhibit this type of shape-memory behavior at higher temperatures. But for high temperatures, there are currently no commercial shape-memory alloys. Although there are significant challenges to the development of high-temperature shape-memory alloys, at the NASA Glenn Research Center we have identified a series of alloy compositions in the Ti-Ni-Pt system that show great promise as potential high-temperature shape-memory materials.

Social Isolation During Adolescence Strengthens Retention of Fear Memories and Facilitates Induction of Late-Phase Long-Term Potentiation.

PubMed

Liu, Ji-Hong; You, Qiang-Long; Wei, Mei-Dan; Wang, Qian; Luo, Zheng-Yi; Lin, Song; Huang, Lang; Li, Shu-Ji; Li, Xiao-Wen; Gao, Tian-Ming

2015-12-01

Social isolation during the vulnerable period of adolescence produces emotional dysregulation that often manifests as abnormal behavior in adulthood. The enduring consequence of isolation might be caused by a weakened ability to forget unpleasant memories. However, it remains unclear whether isolation affects unpleasant memories. To address this, we used a model of associative learning to induce the fear memories and evaluated the influence of isolation mice during adolescence on the subsequent retention of fear memories and its underlying cellular mechanisms. Following adolescent social isolation, we found that mice decreased their social interaction time and had an increase in anxiety-related behavior. Interestingly, when we assessed memory retention, we found that isolated mice were unable to forget aversive memories when tested 4 weeks after the original event. Consistent with this, we observed that a single train of high-frequency stimulation (HFS) enabled a late-phase long-term potentiation (L-LTP) in the hippocampal CA1 region of isolated mice, whereas only an early-phase LTP was observed with the same stimulation in the control mice. Social isolation during adolescence also increased brain-derived neurotrophic factor (BDNF) expression in the hippocampus, and application of a tropomyosin-related kinase B (TrkB) receptor inhibitor ameliorated the facilitated L-LTP seen after isolation. Together, our results suggest that adolescent isolation may result in mental disorders during adulthood and that this may stem from an inability to forget the unpleasant memories via BDNF-mediated synaptic plasticity. These findings may give us a new strategy to prevent mental disorders caused by persistent unpleasant memories.

Enhancing and reducing chirality by opposite circularly-polarized light irradiation on crystalline chiral domains consisting of nonchiral photoresponsive W-shaped liquid crystal molecules.

PubMed

Choi, Suk-Won; Takezoe, Hideo

2016-09-28

We found possible chirality enhancement and reduction in chiral domains formed by photoresponsive W-shaped molecules by irradiation with circularly polarized light (CPL). The W-shaped molecules exhibit a unique smectic phase with spontaneously segregated chiral domains, although the molecules are nonchiral. The chirality control was generated in the crystalline phase, which shows chiral segregation as in the upper smectic phase, and the result appeared to be as follows: for a certain chiral domain, right-CPL stimuli enhanced the chirality, while left-CPL stimuli reduced the chirality, and vice versa for another chiral domain. Interestingly, no domain-size change could be observed after CPL irradiation, suggesting some changes in the causes of chirality. In this way, the present system can recognize the handedness of the applied chiral stimuli. In other words, the present material can be used as a sensitive chiral-stimuli-recognizing material and should find invaluable applications, including in chiroptical switches, sensors, and memories as well as in chiral recognition.

Hot-carrier trap-limited transport in switching chalcogenides

NASA Astrophysics Data System (ADS)

Piccinini, Enrico; Cappelli, Andrea; Buscemi, Fabrizio; Brunetti, Rossella; Ielmini, Daniele; Rudan, Massimo; Jacoboni, Carlo

2012-10-01

Chalcogenide materials have received great attention in the last decade owing to their application in new memory systems. Recently, phase-change memories have, in fact, reached the early stages of production. In spite of the industrial exploitation of such materials, the physical processes governing the switching mechanism are still debated. In this paper, we work out a complete and consistent model for transport in amorphous chalcogenide materials based on trap-limited conduction accompanied by carrier heating. A previous model is here extended to include position-dependent carrier concentration and field, consistently linked by the Poisson equation. The results of the new model reproduce the experimental electrical characteristics and their dependences on the device length and temperature. Furthermore, the model provides a sound physical interpretation of the switching phenomenon and is able to give an estimate of the threshold condition in terms of the material parameters, a piece of information of great technological interest.

Stability and accuracy of metamemory in adulthood and aging: a longitudinal analysis.

PubMed

McDonald-Miszczak, L; Hertzog, C; Hultsch, D F

1995-12-01

The stability and accuracy of memory perceptions in 2 longitudinal samples was examined. Sample 1 consisted of 231 adults (22-78 years) tested twice over 2 years. Sample 2 consisted of 234 adults (55-86 years) tested 3 times over 6 years. Measures of perceived and actual memory change were obtained. A primary focus was whether perceptions of memory change stem from application of an implicit theory about aging and memory or from accurate monitoring of actual changes in performance. Individual differences in metamemory were highly stable over time. Results suggested at least some accurate monitoring of memory in Sample 2, in which actual change was greatest. However the overall pattern of results is largely consistent with predictions derived from an implicit theory hypothesis.

Analysis of phase transitions in spin-crossover compounds by using atom - phonon coupling model

NASA Astrophysics Data System (ADS)

Gîndulescu, A.; Rotaru, A.; Linares, J.; Dimian, M.; Nasser, J.

2011-01-01

The spin - crossover compounds (SCO) have become of great interest recently due to their potential applications in memories, sensors, switches, and display devices. These materials are particularly interesting because upon application of heat, light, pressure or other physical stimulus, they feature a phase transition between a low-spin (LS) diamagnetic ground state and a high-spin (HS) paramagnetic state, accompanied in some cases by color change. The phase transition can be discontinuous (with hysteresis), in two steps or gradual. Our analysis is performed by using the atom - phonon coupling (APC) model which considers that neighboring molecules are connected through a spring characterized by an elastic constant depending on molecules electronic state. By associating a fictitious spin to each molecule that has -1 and +1 eigenvalues corresponding to LS and HS levels respectively, an Ising type model can be developed for the analysis of metastable states and phase transitions in spin-crossover compounds. This contribution is aimed at providing a review of our recent results in this area, as well as novel aspects related to SCO compounds behavior at low temperature. In the framework of the APC model, we will discuss about the existence of metastable and unstable states, phase transitions and hysteresis phenomena, as well as their dependence on sample size.

Development and Testing of a Shape Memory Alloy-Driven Composite Morphing Radiator

NASA Astrophysics Data System (ADS)

Walgren, P.; Bertagne, C.; Wescott, M.; Benafan, O.; Erickson, L.; Whitcomb, J.; Hartl, D.

2018-03-01

Future crewed deep space missions will require thermal control systems that can accommodate larger fluctuations in temperature and heat rejection loads than current designs. To maintain the crew cabin at habitable temperatures throughout the entire mission profile, radiators will be required to exhibit turndown ratios (defined as the ratio between the maximum and minimum heat rejection rates) as high as 12:1. Potential solutions to increase radiator turndown ratios include designs that vary the heat rejection rate by changing shape, hence changing the rate of radiation to space. Shape memory alloys exhibit thermally driven phase transformations and thus can be used for both the control and actuation of such a morphing radiator with a single active structural component that transduces thermal energy into motion. This work focuses on designing a high-performance composite radiator panel and investigating the behavior of various SMA actuators in this application. Three designs were fabricated and subsequently tested in a relevant thermal vacuum environment; all three exhibited repeatable morphing behavior, and it is shown through validated computational analysis that the morphing radiator concept can achieve a turndown ratio of 27:1 with a number of simple configuration changes.

The Regulation of Transcription in Memory Consolidation

PubMed Central

Alberini, Cristina M.; Kandel, Eric R.

2015-01-01

De novo transcription of DNA is a fundamental requirement for the formation of long-term memory. It is required during both consolidation and reconsolidation, the posttraining and postreactivation phases that change the state of the memory from a fragile into a stable and long-lasting form. Transcription generates both mRNAs that are translated into proteins, which are necessary for the growth of new synaptic connections, as well as noncoding RNA transcripts that have regulatory or effector roles in gene expression. The result is a cascade of events that ultimately leads to structural changes in the neurons that mediate long-term memory storage. The de novo transcription, critical for synaptic plasticity and memory formation, is orchestrated by chromatin and epigenetic modifications. The complexity of transcription regulation, its temporal progression, and the effectors produced all contribute to the flexibility and persistence of long-term memory formation. In this article, we provide an overview of the mechanisms contributing to this transcriptional regulation underlying long-term memory formation. PMID:25475090

Study of thermomechanical treatment on mechanical-induced phase transformation of NiTi and TiNiCu wires.

PubMed

Seyyed Aghamiri, S M; Nili Ahmadabadi, M; Shahmir, H; Naghdi, F; Raygan, Sh

2013-05-01

The nickel-titanium shape memory alloys have been used in orthodontic application due to their unique properties like superelasticity and biocompatibility. The phase transformation behavior of these alloys can be changed by alloying elements and thermomechanical processing conditions. In this study, two types of NiTi and TiNiCu wires of 0.4mm diameter were produced via thermomechanical treatments with final step of 20% cold drawing followed by annealing at different temperatures of 300 and 400 °C for varying times of 10, 30 and 60 min. The processed wires were characterized by oral cavity configuration three point bending (OCTPB) test at 37 °C to specify the mechanical transformation features. Also, differential scanning calorimetry (DSC) was used to analyze the thermal transformation temperatures of selected wires. The results showed the thermomechanical treatment at 300 °C for 30 min was the suitable process in terms of superelasticity and transformation temperatures for orthodontic application. Copyright © 2013 Elsevier Ltd. All rights reserved.

Large-Scale Cubic-Scaling Random Phase Approximation Correlation Energy Calculations Using a Gaussian Basis.

PubMed

Wilhelm, Jan; Seewald, Patrick; Del Ben, Mauro; Hutter, Jürg

2016-12-13

We present an algorithm for computing the correlation energy in the random phase approximation (RPA) in a Gaussian basis requiring [Formula: see text] operations and [Formula: see text] memory. The method is based on the resolution of the identity (RI) with the overlap metric, a reformulation of RI-RPA in the Gaussian basis, imaginary time, and imaginary frequency integration techniques, and the use of sparse linear algebra. Additional memory reduction without extra computations can be achieved by an iterative scheme that overcomes the memory bottleneck of canonical RPA implementations. We report a massively parallel implementation that is the key for the application to large systems. Finally, cubic-scaling RPA is applied to a thousand water molecules using a correlation-consistent triple-ζ quality basis.

Development of Metallic Sensory Alloys

NASA Technical Reports Server (NTRS)

Wallace Terryl A.; Newman, John A.; Horne, Michael R.; Messick, Peter L.

2010-01-01

Existing nondestructive evaluation (NDE) technologies are inherently limited by the physical response of the structural material being inspected and are therefore not generally effective at the identification of small discontinuities, making the detection of incipient damage extremely difficult. One innovative solution to this problem is to enhance or complement the NDE signature of structural materials to dramatically improve the ability of existing NDE tools to detect damage. To address this need, a multifunctional metallic material has been developed that can be used in structural applications. The material is processed to contain second phase sensory particles that significantly improve the NDE response, enhancing the ability of conventional NDE techniques to detect incipient damage both during and after flight. Ferromagnetic shape-memory alloys (FSMAs) are an ideal material for these sensory particles as they undergo a uniform and repeatable change in both magnetic properties and crystallographic structure (martensitic transformation) when subjected to strain and/or temperature changes which can be detected using conventional NDE techniques. In this study, the use of a ferromagnetic shape memory alloy (FSMA) as the sensory particles was investigated.

Changes of EEG Spectra and Functional Connectivity during an Object-Location Memory Task in Alzheimer's Disease.

PubMed

Han, Yuliang; Wang, Kai; Jia, Jianjun; Wu, Weiping

2017-01-01

Object-location memory is particularly fragile and specifically impaired in Alzheimer's disease (AD) patients. Electroencephalogram (EEG) was utilized to objectively measure memory impairment for memory formation correlates of EEG oscillatory activities. We aimed to construct an object-location memory paradigm and explore EEG signs of it. Two groups of 20 probable mild AD patients and 19 healthy older adults were included in a cross-sectional analysis. All subjects took an object-location memory task. EEG recordings performed during object-location memory tasks were compared between the two groups in the two EEG parameters (spectral parameters and phase synchronization). The memory performance of AD patients was worse than that of healthy elderly adults The power of object-location memory of the AD group was significantly higher than the NC group (healthy elderly adults) in the alpha band in the encoding session, and alpha and theta bands in the retrieval session. The channels-pairs the phase lag index value of object-location memory in the AD group was clearly higher than the NC group in the delta, theta, and alpha bands in encoding sessions and delta and theta bands in retrieval sessions. The results provide support for the hypothesis that the AD patients may use compensation mechanisms to remember the items and episode.

Three-terminal resistive switching memory in a transparent vertical-configuration device

NASA Astrophysics Data System (ADS)

Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

Three-dimensional nanomechanical mapping of amorphous and crystalline phase transitions in phase-change materials.

PubMed

Grishin, Ilja; Huey, Bryan D; Kolosov, Oleg V

2013-11-13

The nanostructure of micrometer-sized domains (bits) in phase-change materials (PCM) that undergo switching between amorphous and crystalline phases plays a key role in the performance of optical PCM-based memories. Here, we explore the dynamics of such phase transitions by mapping PCM nanostructures in three dimensions with nanoscale resolution by combining precision Ar ion beam cross-sectional polishing and nanomechanical ultrasonic force microscopy (UFM) mapping. Surface and bulk phase changes of laser written submicrometer to micrometer sized amorphous-to-crystalline (SET) and crystalline-to-amorphous (RESET) bits in chalcogenide Ge2Sb2Te5 PCM are observed with 10-20 nm lateral and 4 nm depth resolution. UFM mapping shows that the Young's moduli of crystalline SET bits exceed the moduli of amorphous areas by 11 ± 2%, with crystalline content extending from a few nanometers to 50 nm in depth depending on the energy of the switching pulses. The RESET bits written with 50 ps pulses reveal shallower depth penetration and show 30-50 nm lateral and few nanometer vertical wavelike topography that is anticorrelated with the elastic modulus distribution. Reverse switching of amorphous RESET bits results in the full recovery of subsurface nanomechanical properties accompanied with only partial topography recovery, resulting in surface corrugations attributed to quenching. This precision sectioning and nanomechanical mapping approach could be applicable to a wide range of amorphous, nanocrystalline, and glass-forming materials for 3D nanomechanical mapping of amorphous-crystalline transitions.

Working memory activation of neural networks in the elderly as a function of information processing phase and task complexity.

PubMed

Charroud, Céline; Steffener, Jason; Le Bars, Emmanuelle; Deverdun, Jérémy; Bonafe, Alain; Abdennour, Meriem; Portet, Florence; Molino, François; Stern, Yaakov; Ritchie, Karen; Menjot de Champfleur, Nicolas; Akbaraly, Tasnime N

2015-11-01

Changes in working memory are sensitive indicators of both normal and pathological brain aging and associated disability. The present study aims to further understanding of working memory in normal aging using a large cohort of healthy elderly in order to examine three separate phases of information processing in relation to changes in task load activation. Using covariance analysis, increasing and decreasing neural activation was observed on fMRI in response to a delayed item recognition task in 337 cognitively healthy elderly persons as part of the CRESCENDO (Cognitive REServe and Clinical ENDOphenotypes) study. During three phases of the task (stimulation, retention, probe), increased activation was observed with increasing task load in bilateral regions of the prefrontal cortex, parietal lobule, cingulate gyrus, insula and in deep gray matter nuclei, suggesting an involvement of central executive and salience networks. Decreased activation associated with increasing task load was observed during the stimulation phase, in bilateral temporal cortex, parietal lobule, cingulate gyrus and prefrontal cortex. This spatial distribution of decreased activation is suggestive of the default mode network. These findings support the hypothesis of an increased activation in salience and central executive networks and a decreased activation in default mode network concomitant to increasing task load. Copyright © 2015 Elsevier Inc. All rights reserved.

Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles

NASA Astrophysics Data System (ADS)

Chen, Bin; Ten Brink, Gert H.; Palasantzas, George; Kooi, Bart J.

2016-12-01

Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building blocks for non-volatile memory due to their high write and read speeds, high data-storage density, and low power consumption. Top-down fabrication of PCM nanoparticles (NPs), however, often results in damage and deterioration of their useful properties. Gas-phase condensation based on magnetron sputtering offers an attractive and straightforward solution to continuously down-scale the PCMs into sub-lithographic sizes. Here we unprecedentedly present the size dependence of crystallization for Ge2Sb2Te5 (GST) NPs, whose production is currently highly challenging for chemical synthesis or top-down fabrication. Both amorphous and crystalline NPs have been produced with excellent size and composition control with average diameters varying between 8 and 17 nm. The size-dependent crystallization of these NPs was carefully analyzed through in-situ heating in a transmission electron microscope, where the crystallization temperatures (Tc) decrease when the NPs become smaller. Moreover, methane incorporation has been observed as an effective method to enhance the amorphous phase stability of the NPs. This work therefore elucidates that GST NPs synthesized by gas-phase condensation with tailored properties are promising alternatives in designing phase-change memories constrained by optical lithography limitations.

Can Oxytocin Enhance the Placebo Effect?

ClinicalTrials.gov

2018-02-06

Oxytocin Effect on Memory Performance During Phase 1; Oxytocin Effect on Memory Performance During Phase 2; Oxytocin Effect on Memory Performance During Phase 3; Oxytocin Effect on Memory Performance During Phase 4

Calculation of optical parameters for covalent binary alloys used in optical memories/solar cells: a modified approach

NASA Astrophysics Data System (ADS)

Bhatnagar, Promod K.; Gupta, Poonam; Singh, Laxman

2001-06-01

Chalcogenide based alloys find applications in a number of devices like optical memories, IR detectors, optical switches, photovoltaics, compound semiconductor heterosrtuctures etc. We have modified the Gurman's statistical thermodynamic model (STM) of binary covalent alloys. In the Gurman's model, entropy calculations are based on the number of structural units present. The need to modify this model arose due to the fact that it gives equal probability for all the tetrahedra present in the alloy. We have modified the Gurman's model by introducing the concept that the entropy is based on the bond arrangement rather than that on the structural units present. In the present work calculation based on this modification have been presented for optical properties, which find application in optical switching/memories, solar cells and other optical devices. It has been shown that the calculated optical parameters (for a typical case of GaxSe1-x) based on modified model are closer to the available experimental results. These parameters include refractive index, extinction coefficient, dielectric functions, optical band gap etc. GaxSe1-x has been found to be suitable for reversible optical memories also, where phase change (a yields c and vice versa) takes place at specified physical conditions. DTA/DSC studies also suggest the suitability of this material for optical switching/memory applications. We have also suggested possible use of GaxSe1-x (x = 0.4) in place of oxide layer in a Metal - Oxide - Semiconductor type solar cells. The new structure is Metal - Ga2Se3 - GaAs. The I-V characteristics and other parameters calculated for this structure are found to be much better than that for Si based solar cells. Maximum output power is obtained at the intermediate layer thickness approximately 40 angstroms for this typical solar cell.

Using Ge Secondary Phases to Enhance the Power Factor and Figure of Merit of Ge17Sb2Te20

NASA Astrophysics Data System (ADS)

Williams, Jared B.; Morelli, Donald T.

2017-05-01

Thermoelectric materials are the leading candidate today for applications in solid-state waste-heat recovery/cooling applications. Research and engineering has pushed the ZT, and overall conversion efficiency, of these materials to values which can be deemed practical for commercialization. However, many of the state-of-the-art thermoelectric materials of today utilize elements which are toxic, such as Ag, Pb, Tl, and Cd. Alloys of GeTe and Sb2Te3 were first explored for their applications in phase-change memory, because of their ability to rapidly alternate between crystalline and amorphous phases. Recently, these materials have been identified as materials with ZT ( S 2 T/ ρκ, where S is the Seebeck coefficient, ρ is the electrical resistivity, T is the operating temperature, and κ is the thermal conductivity) much greater than unity. In this work, the influence of elemental Ge as a secondary phase on transport in Ge17Sb2Te20 was explored. It was found that Ge introduces an additional scattering mechanism, which leads to increased electrical resistivity, Seebeck coefficient, and power factor values as high as 36 μW cm-1 K-2. The thermal conductivity was slightly reduced and the ZT was enhanced across the entire temperature range of measurement, with peak values greater than 2.

Olfactory short-term memory encoding and maintenance - an event-related potential study.

PubMed

Lenk, Steffen; Bluschke, Annet; Beste, Christian; Iannilli, Emilia; Rößner, Veit; Hummel, Thomas; Bender, Stephan

2014-09-01

This study examined whether the memory encoding and short term maintenance of olfactory stimuli is associated with neurophysiological activation patterns which parallel those described for sensory modalities such as vision and auditory. We examined olfactory event-related potentials in an olfactory change detection task in twenty-four healthy adults and compared the measured activation to that found during passive olfactory stimulation. During the early olfactory post-processing phase, we found a sustained negativity over bilateral frontotemporal areas in the passive perception condition which was enhanced in the active memory task. There was no significant lateralization in either experimental condition. During the maintenance interval at the end of the delay period, we still found sustained activation over bilateral frontotemporal areas which was more negative in trials with correct - as compared to incorrect - behavioural responses. This was complemented by a general significantly stronger frontocentral activation. Summarizing, we were able to show that olfactory short term memory involves a parallel sequence of activation as found in other sensory modalities. In addition to olfactory-specific frontotemporal activations in the memory encoding phase, we found slow cortical potentials over frontocentral areas during the memory maintenance phase indicating the activation of a supramodal memory maintenance system. These findings could represent the neurophysiological underpinning of the 'olfactory flacon', the olfactory counter-part to the visual sketchpad and phonological loop embedded in Baddeley's working memory model. Copyright © 2014 Elsevier Inc. All rights reserved.

Neonicotinoids Interfere with Specific Components of Navigation in Honeybees

PubMed Central

Fischer, Johannes; Müller, Teresa; Spatz, Anne-Kathrin; Greggers, Uwe; Grünewald, Bernd; Menzel, Randolf

2014-01-01

Three neonicotinoids, imidacloprid, clothianidin and thiacloprid, agonists of the nicotinic acetylcholine receptor in the central brain of insects, were applied at non-lethal doses in order to test their effects on honeybee navigation. A catch-and-release experimental design was applied in which feeder trained bees were caught when arriving at the feeder, treated with one of the neonicotinoids, and released 1.5 hours later at a remote site. The flight paths of individual bees were tracked with harmonic radar. The initial flight phase controlled by the recently acquired navigation memory (vector memory) was less compromised than the second phase that leads the animal back to the hive (homing flight). The rate of successful return was significantly lower in treated bees, the probability of a correct turn at a salient landscape structure was reduced, and less directed flights during homing flights were performed. Since the homing phase in catch-and-release experiments documents the ability of a foraging honeybee to activate a remote memory acquired during its exploratory orientation flights, we conclude that non-lethal doses of the three neonicotinoids tested either block the retrieval of exploratory navigation memory or alter this form of navigation memory. These findings are discussed in the context of the application of neonicotinoids in plant protection. PMID:24646521

Multilevel control of the metastable states in a manganite film

NASA Astrophysics Data System (ADS)

Jin, Feng; Feng, Qiyuan; Guo, Zhuang; Lan, Da; Chen, Binbin; Xu, Haoran; Wang, Ze; Wang, Lingfei; Gao, Guanyin; Chen, Feng; Lu, Qingyou; Wu, Wenbin

2017-06-01

For high density memory applications, the dynamic switching between multilevel resistance states per cell is highly desirable, and for oxide-based memory devices, the multistate operation has been actively explored. We have previously shown that for La2/3Ca1/3MnO3 films, the antiferromagnetic charge-ordered-insulator (COI) phase can be induced via the anisotropic epitaxial strain, and it competes with the doping-determined ferromagnetic-metal (FMM) ground state in a wide temperature range. Here, we show that for the phase competitions, in various magnetic fields and/or thermal cycling, the reappearance of the COI phase and thus the resistance and magnetization can be manipulated and quantified in a multilevel manner at lower temperatures. Furthermore, by using a high-field magnetic force microscope, we image the COI/FMM domain structures in accordance with the transport measurements, and find that the evolving domains or the phase fraction ratios do underline the metastability of the reappeared COI droplets, possibly protected by the energy barriers due to accommodation strain. These results may add new insights into the design and fabrication of future multilevel memory cells.

Wide-field imaging through scattering media by scattered light fluorescence microscopy

NASA Astrophysics Data System (ADS)

Zhou, Yulan; Li, Xun

2017-08-01

To obtain images through scattering media, scattered light fluorescence (SLF) microscopy that utilizes the optical memory effect has been developed. However, the small field of view (FOV) of SLF microscopy limits its application. In this paper, we have introduced a re-modulation method to achieve wide-field imaging through scattering media by SLF microscopy. In the re-modulation method, to raster scan the focus across the object plane, the incident wavefront is re-modulated via a spatial light modulator (SLM) in the updated phase compensation calculated using the optimized iterative algorithm. Compared with the conventional optical memory effect method, the re-modulation method can greatly increase the FOV of a SLF microscope. With the phase compensation theoretically calculated, the process of updating the phase compensation of a high speed SLM is fast. The re-modulation method does not increase the imaging time. The re-modulation method is, therefore, expected to make SLF microscopy have much wider applications in biology, medicine and physiology.

Fatigue Resistance of Liquid-assisted Self-repairing Aluminum Alloys Reinforced with Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Wright, M. Clara; Manuel, Michele; Wallace, Terryl

2013-01-01

A self-repairing aluminum-based composite system has been developed using a liquid-assisted healing theory in conjunction with the shape memory effect of wire reinforcements. The metal-metal composite was thermodynamically designed to have a matrix with a relatively even dispersion of a low-melting eutectic phase, allowing for repair of cracks at a predetermined temperature. Additionally, shape memory alloy (SMA) wire reinforcements were used within the composite to provide crack closure. Investigators focused the research on fatigue cracks propagating through the matrix in order to show a proof-of-concept Shape Memory Alloy Self-Healing (SMASH) technology for aeronautical applications.

Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

Development and Characterization of High Performance Shape Memory Alloy Coatings for Structural Aerospace Applications.

PubMed

Exarchos, Dimitrios A; Dalla, Panagiota T; Tragazikis, Ilias K; Dassios, Konstantinos G; Zafeiropoulos, Nikolaos E; Karabela, Maria M; De Crescenzo, Carmen; Karatza, Despina; Musmarra, Dino; Chianese, Simeone; Matikas, Theodore E

2018-05-18

This paper presents an innovative approach, which enables control of the mechanical properties of metallic components by external stimuli to improve the mechanical behavior of aluminum structures in aeronautical applications. The approach is based on the exploitation of the shape memory effect of novel Shape Memory Alloy (SMA) coatings deposited on metallic structural components, for the purpose of relaxing the stress of underlying structures by simple heating at field-feasible temperatures, therefore enhancing their structural integrity and increasing their stiffness and rigidity while allowing them to withstand expected loading conditions safely. Numerical analysis provided an insight in the expected response of the SMA coating and of the SMA-coated element, while the dependence of alloy composition and heat treatment on the experienced shape memory effect were investigated experimentally. A two-phase process is proposed for deposition of the SMA coating in an order that induces beneficial stress relaxation to the underlying structure through the shape memory effect.

Development and Characterization of High Performance Shape Memory Alloy Coatings for Structural Aerospace Applications

PubMed Central

Exarchos, Dimitrios A.; Dalla, Panagiota T.; Tragazikis, Ilias K.; Zafeiropoulos, Nikolaos E.; Karabela, Maria M.; De Crescenzo, Carmen; Karatza, Despina; Matikas, Theodore E.

2018-01-01

This paper presents an innovative approach, which enables control of the mechanical properties of metallic components by external stimuli to improve the mechanical behavior of aluminum structures in aeronautical applications. The approach is based on the exploitation of the shape memory effect of novel Shape Memory Alloy (SMA) coatings deposited on metallic structural components, for the purpose of relaxing the stress of underlying structures by simple heating at field-feasible temperatures, therefore enhancing their structural integrity and increasing their stiffness and rigidity while allowing them to withstand expected loading conditions safely. Numerical analysis provided an insight in the expected response of the SMA coating and of the SMA-coated element, while the dependence of alloy composition and heat treatment on the experienced shape memory effect were investigated experimentally. A two-phase process is proposed for deposition of the SMA coating in an order that induces beneficial stress relaxation to the underlying structure through the shape memory effect. PMID:29783626

Developmental differences in the neural correlates of relational encoding and recall in children: An event-related fMRI study

PubMed Central

Güler, O. Evren; Thomas, Kathleen M.

2012-01-01

Despite vast knowledge on the behavioral processes mediating the development of episodic memory, little is known about the neural mechanisms underlying these changes. We used event-related fMRI to examine the neural correlates of both encoding and recall processes during an episodic memory task in two different groups of school age children (8–9 & 12–13 years). The memory task was composed of an encoding phase in which children were presented with a series of unrelated pictorial pairs, and a retrieval phase during which one of these items acted as a cue to prompt recall of the paired item. Age-related differences in activations were observed for both encoding and recall. Younger children recruited additional regions in the right dorsolateral prefrontal and right temporal cortex compared to older children during successful encoding of the pairs. During successful recall, older children recruited additional regions in the left ventrolateral prefrontal and left inferior parietal cortex compared to younger children. The results suggest that the prefrontal cortex contributes to not only the formation of memories but also access to them, and this contribution changes with development. The protracted development of the prefrontal cortex has implications for our understanding of the development of episodic memory. PMID:22884992

Materials and other needs for advanced phase change memory (Presentation Recording)

NASA Astrophysics Data System (ADS)

Sosa, Norma E.

2015-09-01

Phase change memory (PCM), with its long history, may now hold its brightest promise to date. This bright future is being fueled by the "push" from big data. PCM is a non-volatile memory technology used to create solid-state random access memory devices that operate based the resistance properties of materials. Employing the electrical resistance differences-as opposed to differences in charge stored-between the amorphous and crystalline phases of the material, PCM can store bits, namely one's and zero's. Indeed, owing to the method of storage, PCM can in fact be designed to hold multiple bits thus leading to a high-density technology twice the storage density and less than half the cost of DRAM, the main kind found in typical personal computers. It has been long known that PCM can fill a need gap that spans 3 decades in performance from DRAM to solid state drive (NAND Flash). Furthermore, PCM devices can lead to performance and reliability improvements essential to enabling significant steps forward to supporting big data centric computing. This talk will focus on the science and challenges of aggressive scaling to realize the density needed, how this scaling challenge is intertwined with materials needs for endurance into the giga-cycles, and the associated forefront research aiming to realizing multi-level functionality into these nanoscale programmable resistor devices.

Treating verbal working memory in a boy with intellectual disability

PubMed Central

Orsolini, Margherita; Melogno, Sergio; Latini, Nausica; Penge, Roberta; Conforti, Sara

2015-01-01

The present case study investigates the effects of a cognitive training of verbal working memory that was proposed for Davide, a 14-year-old boy diagnosed with mild intellectual disability. The program stimulated attention, inhibition, switching, and the ability to engage either in verbal dual tasks or in producing inferences after the content of a short passage had been encoded in episodic memory. Key elements in our program included (1) core training of target cognitive mechanisms; (2) guided practice emphasizing concrete strategies to engage in exercises; and (3) a variable amount of adult support. The study explored whether such a complex program produced “near transfer” effects on an untrained dual task assessing verbal working memory and whether effects on this and other target cognitive mechanisms (i.e., attention, inhibition, and switching) were long-lasting and produced “far transfer” effects on cognitive flexibility. The effects of the intervention program were investigated with a research design consisting of four subsequent phases lasting 8 or 10 weeks, each preceded and followed by testing. There was a control condition (phase 1) in which the boy received, at home, a stimulation focused on the visuospatial domain. Subsequently, there were three experimental training phases, in which stimulation in the verbal domain was first focused on attention and inhibition (phase 2a), then on switching and simple working memory tasks (phase 2b), then on complex working memory tasks (phase 3). A battery of neuropsychological tests was administered before and after each training phase and 7 months after the conclusion of the intervention. The main finding was that Davide changed from being incapable of addressing the dual task request of the listening span test in the initial assessment to performing close to the normal limits of a 13-year-old boy in the follow-up assessment with this test, when he was 15 years old. PMID:26284014

Micromechanics of composites with shape memory alloy fibers in uniform thermal fields

NASA Technical Reports Server (NTRS)

Birman, Victor; Saravanos, Dimitris A.; Hopkins, Dale A.

1995-01-01

Analytical procedures are developed for a composite system consisting of shape memory alloy fibers within an elastic matrix subject to uniform temperature fluctuations. Micromechanics for the calculation of the equivalent properties of the composite are presented by extending the multi-cell model to incorporate shape memory alloy fibers. A three phase concentric cylinder model is developed for the analysis of local stresses which includes the fiber, the matrix, and the surrounding homogenized composite. The solution addresses the complexities induced by the nonlinear dependence of the in-situ martensite fraction of the fibers to the local stresses and temperature, and the local stresses developed from interactions between the fibers and matrix during the martensitic and reverse phase transformations. Results are presented for a nitinol/epoxy composite. The applications illustrate the response of the composite in isothermal longitudinal loading and unloading, and in temperature induced actuation. The local stresses developed in the composite under various stages of the martensitic and reverse phase transformation are also shown.

Phase Measurement of Cognitive Impairment Specific to Radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Carol L., E-mail: armstrongc@email.chop.edu; Department of Pediatrics, Division of Neuro-Oncology, University of Pennsylvania, School of Medicine, Philadelphia, Pennsylvania; Shera, David M.

Purpose: Memory impairment is an early-delayed effect of radiotherapy (RT). The prospective longitudinal measurement of the cognitive phase effects from RT was conducted on treated and untreated brain tumor patients. The study design investigated semantic vs. perceptual and visual vs. verbal memory to determine the most disease-specific measure of RT-related changes and understanding of the neurotoxicity from RT to the brain. Methods and Materials: Tests of memory that had previously shown RT-related phasic changes were compared with experimental tests of memory to test hypotheses about cognition targeted to the neural toxicity of RT. The results from 41 irradiated and 29more » nonirradiated patients with low-grade, supratentorial tumors were analyzed. The methods controlled for comorbid white matter risk, recurrence, interval after treatment, and age (18-69 years). The effects were examined before RT and at three points after RT to 1 year using a mixed effects model that included interval, group, surgical status, medication use, practice, and individual random effects. Four new tests of memory and other candidate cognitive tests were investigated, and a post hoc analysis of a comprehensive battery of tests was performed to identify the cognitive processes most specific to RT. Results: The RT effects on memory were identified in the treated group only; among the new tests of memory and the complete neurocognitive battery, the RT effects were significant only for delayed recall (p < 0.009) and interval to recognize (p < 0.002). Tumor location was not related to the treatment effect. Memory decline was specific to retrieval of semantic memories; a double dissociation of semantic from perceptual visual memory was demonstrated in the RT group. Conclusions: These results implicate memory dependent on the semantic cortex and the hippocampal memory system. A cognitive measurement that is brief but specific to neural mechanisms is effective and feasible for studies of RT damage.« less

Preface to ISIF 2009 special issue of Journal of Applied Physics : science and technology of integrated functionalities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Dey, S.; Paz de Araujo, C.

2011-05-01

The science and technology of ferroelectric thin films and their applications have attracted many researchers and experienced tremendous progress in the past 20 years. The recent worldwide increase in commercial applications of ferroelectric devices such as smart cards based on nonvolatile ferroelectric random access memories is a symbol of both the maturity and the acceptance of the technology. The 21st International Symposium on Integrated Ferroelectrics (ISIF 2009), held on September 22 to October 2, 2009 in Colorado Springs, CO, provided a forum for the academic and national laboratories research community and industry to present and share their new findings, achievements,more » and opinions on integrated ferroelectrics and their applications. The International Symposium on Integrated Ferroelectrics hosted the ISIF 2009. This was the first year where the ISIF held the conference in its new format under the name of International Symposium on Integrated Functionalities. The General Chairs of the ISIF in consultation with the Advisory Board and the ISIF community decided to revise the focus of the conference in order to broaden the scope to the science and technology of multifunctional materials and devices. This decision was taken in view that a new paradigm in materials, materials integration, and devices is emerging with a view to the development of a new generation of micro- and nanoscale multifunctional devices. The program included three plenary presentations on diverse topics such as 'The Role of Nonvolatile Memory in Ubiquitous Computing,' 'Ferroelectrics and High Density Memory Technology,' 'Nanoscale Ferroelectrics and Interfaces: Size Effects,' four tutorial lectures on diverse topics, such as 'Magnetic Memory Applications,' 'Ferroelectrics and Ferroelectric Devices,' 'Challenges for High-K Dielectrics on High Mobility Channels,' 'Solar Cell Materials,' one poster session, and eight oral sessions. Thanks to the great efforts made by the ISIF organization committee and the session chairs, the conference successfully achieved its objectives and the work presented reflected very well the most recent advances of integrated ferroelectrics and their applications, as well as advances in other areas related to the new theme of Integrated Functionalities. Many aspects of ferroelectric, piezoelectric, high-K dielectric, magnetic, and phase change materials, including the science and technology of these materials in thin film form, integration with other thin film materials (metals or oxide electrodes), and fabrication of micro- and nanostructures based on these heterostructure layers, and device architecture and physics, were addressed from the experimental point of view. Work on theory and computer simulations of the mentioned materials and devices were discussed also with a view to the promising applications to multifunctional devices. In addition, the ISIF 2009 featured discussions of alternative nonvolatile memory concepts and materials, such as phase change memories, research on multiferroics and magnetoelectric materials, ferroelectric photovoltaics, and new directions on the science of perovskites such as biomolecular/polarizable interfaces, and bio-ferroelectric and other oxide interfaces. Following the standard submission and peer review process of Journal of Applied Physics, the selected papers presented in ISIF 2009 in Colorado Springs are published in this special issue. We believe that the papers in this special issue represent the forefront contributions to ISIF 2009 in the various areas of fundamental and applied science of integrated ferroelectrics and functionalities and their applications. We would like to take this opportunity to thank the following organizations and companies for their support and sponsorship for ISIF 2009, namely: Aixact Systems GMBH, Radiant Technologies, Symetrix Corporation, and Taylor and Francis Publishers. We would also like to thank the conference and session chairs, advisory and organizing committee members for their hard work that resulted in a very successful ISIF 2009, now in its new future-looking modality of Integrated Functionalities.« less

Multifunctional shape-memory polymers.

PubMed

Behl, Marc; Razzaq, Muhammad Yasar; Lendlein, Andreas

2010-08-17

The thermally-induced shape-memory effect (SME) is the capability of a material to change its shape in a predefined way in response to heat. In shape-memory polymers (SMP) this shape change is the entropy-driven recovery of a mechanical deformation, which was obtained before by application of external stress and was temporarily fixed by formation of physical crosslinks. The high technological significance of SMP becomes apparent in many established products (e.g., packaging materials, assembling devices, textiles, and membranes) and the broad SMP development activities in the field of biomedical as well as aerospace applications (e.g., medical devices or morphing structures for aerospace vehicles). Inspired by the complex and diverse requirements of these applications fundamental research is aiming at multifunctional SMP, in which SME is combined with additional functions and is proceeding rapidly. In this review different concepts for the creation of multifunctionality are derived from the various polymer network architectures of thermally-induced SMP. Multimaterial systems, such as nanocomposites, are described as well as one-component polymer systems, in which independent functions are integrated. Future challenges will be to transfer the concept of multifunctionality to other emerging shape-memory technologies like light-sensitive SMP, reversible shape changing effects or triple-shape polymers.

Age-Related Reversals in Neural Recruitment across Memory Retrieval Phases

PubMed Central

Kensinger, Elizabeth A.

2017-01-01

Over the last several decades, neuroimaging research has identified age-related neural changes that occur during cognitive tasks. These changes are used to help researchers identify functional changes that contribute to age-related impairments in cognitive performance. One commonly reported example of such a change is an age-related decrease in the recruitment of posterior sensory regions coupled with an increased recruitment of prefrontal regions across multiple cognitive tasks. This shift is often described as a compensatory recruitment of prefrontal regions due to age-related sensory-processing deficits in posterior regions. However, age is not only associated with spatial shifts in recruitment, but also with temporal shifts, in which younger and older adults recruit the same neural region at different points in a task trial. The current study examines the possible contribution of temporal modifications in the often-reported posterior–anterior shift. Participants, ages 19–85, took part in a memory retrieval task with a protracted retrieval trial consisting of an initial memory search phase and a subsequent detail elaboration phase. Age-related neural patterns during search replicated prior reports of age-related decreases in posterior recruitment and increases in prefrontal recruitment. However, during the later elaboration phase, the same posterior regions were associated with age-related increases in activation. Further, ROI and functional connectivity results suggest that these posterior regions function similarly during search and elaboration. These results suggest that the often-reported posterior–anterior shift may not reflect the inability of older adults to engage in sensory processing, but rather a change in when they recruit this processing. SIGNIFICANCE STATEMENT The current study provides evidence that the often-reported posterior–anterior shift in aging may not reflect a global sensory-processing deficit, as has often been reported, but rather a temporal modification in this processing in which older adults engage the same neural regions during a detail elaboration phase that younger adults engage during memory search. In other words, older adults may ultimately be able to engage the same processes as younger adults during some cognitive tasks when given the time to do so. Future research should examine the generalizability of this effect and the importance of encouraging older adults to engage in these processes through task instruction or questions. PMID:28442537

Realization of metamagnetic martensitic transformation with multifunctional properties in Co50V34Ga16 Heusler alloy

NASA Astrophysics Data System (ADS)

Liu, Changqin; Li, Zhe; Zhang, Yuanlei; Huang, Yinsheng; Ye, Miaofu; Sun, Xiaodong; Zhang, Guojie; Cao, Yiming; Xu, Kun; Jing, Chao

2018-05-01

In this work, we have developed a ferromagnetic shape memory alloy Co50V34Ga16 with a metamagnetic martensitic transformation (MT) from the high-magnetization austenitic phase to the low-magnetization martensitic phase. As a consequence of a strong coupling between structure and magnetic degrees of freedom, the metamagnetic MT of this alloy is relatively sensitive to the external magnetic field, thus giving rise to a field-induced reverse MT. Associated with such a unique behavior, both considerable inverse magnetocaloric effect (9.6 J/kg K) and magnetostrain (0.07%) have also been obtained under the magnetic field change of 3 T. Our experimental results indicate that this kind of Co-V based alloy probably becomes an alternatively promising candidate for applications in magnetic sensors and magnetic refrigeration.

A study to evaluate non-uniform phase maps in shape memory alloys using finite element method

NASA Astrophysics Data System (ADS)

Motte, Naren

The unique thermo-mechanical behavior of Shape Memory Alloys (SMAs), such as their ability to recover the original shape upon heating or being able to tolerate large deformations without undergoing plastic transformations, makes them a good choice for actuators. This work studies their application in the aerospace and defense industries where SMA components can serve as release mechanisms for gates of enclosures that have to be deployed remotely. This work provides a novel approach in evaluating the stress and heat induced change of phase in a SMA, in terms of the transformation strain tensor. In particular, the FEA tool ANSYS has been used to perform a 2-D analysis of a Cu-Al-Zn-Mn SMA specimen undergoing a nontraditional loading path in two steps with stress and heating loads. In the first load step, tensile displacement is applied, followed by the second load step in which the specimen is heated while the end displacements are held constant. A number of geometric configurations are examined under the two step loading path. Strain results are used to calculate transformation strain which provides a quantitative measure of phase at a material point; when transformation strain is zero, the material point is either twinned martensite, or austenite depending on the temperature. Transformation strain value of unity corresponds to detwinned martensite. A value between zero and one indicates mixed phase. In this study, through two step loading in conjunction with transformation strain calculations, a method for mapping transient non-uniform distribution of phases in an SMA is introduced. Ability to obtain drastically different phase distributions under same loading path by modifying the geometry is demonstrated. The failure behavior of SMAs can be designed such that the load level the crack initiates and the path it propagates can be customized.

Sign reversal of transformation entropy change in Co{sub 2}Cr(Ga,Si) shape memory alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiao, E-mail: xu@material.tohoku.ac.jp; Omori, Toshihiro; Kainuma, Ryosuke

2015-11-02

In situ X-ray diffraction (XRD) measurements and compression tests were performed on Co{sub 2}Cr(Ga,Si) shape memory alloys. The reentrant martensitic transformation behavior was directly observed during the in situ XRD measurements. The high-temperature parent phase and low-temperature reentrant parent phase were found to have a continuous temperature dependence of lattice parameter, therefore suggesting that they are the same phase in nature. Moreover, compression tests were performed on a parent-phase single crystal sample; an evolution from normal to inverse temperature dependence of critical stress for martensitic transformation was directly observed. Based on the Clausius-Clapeyron analysis, a sign reversal of entropy changemore » can be expected on the same alloy.« less

Dynamic Photorefractive Memory and its Application for Opto-Electronic Neural Networks.

NASA Astrophysics Data System (ADS)

Sasaki, Hironori

This dissertation describes the analysis of the photorefractive crystal dynamics and its application for opto-electronic neural network systems. The realization of the dynamic photorefractive memory is investigated in terms of the following aspects: fast memory update, uniform grating multiplexing schedules and the prevention of the partial erasure of existing gratings. The fast memory update is realized by the selective erasure process that superimposes a new grating on the original one with an appropriate phase shift. The dynamics of the selective erasure process is analyzed using the first-order photorefractive material equations and experimentally confirmed. The effects of beam coupling and fringe bending on the selective erasure dynamics are also analyzed by numerically solving a combination of coupled wave equations and the photorefractive material equation. Incremental recording technique is proposed as a uniform grating multiplexing schedule and compared with the conventional scheduled recording technique in terms of phase distribution in the presence of an external dc electric field, as well as the image gray scale dependence. The theoretical analysis and experimental results proved the superiority of the incremental recording technique over the scheduled recording. Novel recirculating information memory architecture is proposed and experimentally demonstrated to prevent partial degradation of the existing gratings by accessing the memory. Gratings are circulated through a memory feed back loop based on the incremental recording dynamics and demonstrate robust read/write/erase capabilities. The dynamic photorefractive memory is applied to opto-electronic neural network systems. Module architecture based on the page-oriented dynamic photorefractive memory is proposed. This module architecture can implement two complementary interconnection organizations, fan-in and fan-out. The module system scalability and the learning capabilities are theoretically investigated using the photorefractive dynamics described in previous chapters of the dissertation. The implementation of the feed-forward image compression network with 900 input and 9 output neurons with 6-bit interconnection accuracy is experimentally demonstrated. Learning of the Perceptron network that determines sex based on input face images of 900 pixels is also successfully demonstrated.

Pyroelectricity of silicon-doped hafnium oxide thin films

NASA Astrophysics Data System (ADS)

Jachalke, Sven; Schenk, Tony; Park, Min Hyuk; Schroeder, Uwe; Mikolajick, Thomas; Stöcker, Hartmut; Mehner, Erik; Meyer, Dirk C.

2018-04-01

Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm-2 and -46.2 µC K-1 m-2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 ° C to 170 ° C , which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.

Oxygen Tuned Local Structure and Phase-Change Performance of Germanium Telluride.

PubMed

Zhou, Xilin; Du, Yonghua; Behera, Jitendra K; Wu, Liangcai; Song, Zhitang; Simpson, Robert E

2016-08-10

The effect of oxygen on the local structure of Ge atoms in GeTe-O materials has been investigated. Oxygen leads to a significant modification to the vibrational modes of Ge octahedra, which results from a decrease in its coordination. We find that a defective octahedral Ge network is the crucial fingerprint for rapid and reversible structural transitions in GeTe-based phase change materials. The appearance of oxide Raman modes confirms phase separation into GeO and TeO at high level O doping. Counterintuitively, despite the increase in crystallization temperature of oxygen doped GeTe-O phase change materials, when GeTe-O materials are used in electrical phase change memory cells, the electrical switching energy is lower than the pure GeTe material. This switching energy reduction is ascribed to the smaller change in volume, and therefore smaller enthalpy change, for the oxygen doped GeTe materials.

Phase Change Characteristics of InxSb40-xTe60 Chalcogenide Alloy for Phase Change Random Access Memory

NASA Astrophysics Data System (ADS)

Yun, Jae-Jin; Lee, Won-Jong

2011-07-01

The InxSb40-xTe60 alloy was selected as a new alternative phase change material for Ge2Sb2Te5 (GST) for phase change random access memory (PRAM). The crystal structure of InxSb40-xTe60 was an α(Sb2Te3) rhombohedral (a=b=c, α=β=γ≠90°) single phase with identical lattice parameters in a wide composition range of In (0-28 at. %). The crystallization temperature and melting point of InxSb40-xTe60 were in the ranges of 149-219 °C and 608-614 °C, respectively, and similar to those of GST. The electric properties of InxSb40-xTe60 with a wide composition range of In contents showed the typical PRAM properties such as current-voltage (I-V), resistance-voltage (R-V), and switching behavior. The reset current of InxSb40-xTe60 decreased with increasing In content and the low power consumption and good retention can be realized by controlling In content. The ratio of the cell resistance and sheet resistance of amorphous InxSb40-xTe60 to those crystalline InxSb40-xTe60 were almost the same as or larger than those of GST. The cycling endurance test of InxSb40-xTe60 with a wide range of In contents showed the comparable results to GST. InxSb40-xTe60 was concluded to be a very promising phase change material for PRAM.

Disrupting reconsolidation of fear memory in humans by a noradrenergic β-blocker.

PubMed

Kindt, Merel; Soeter, Marieke; Sevenster, Dieuwke

2014-12-18

The basic design used in our human fear-conditioning studies on disrupting reconsolidation includes testing over different phases across three consecutive days. On day 1 - the fear acquisition phase, healthy participants are exposed to a series of picture presentations. One picture stimulus (CS1+) is repeatedly paired with an aversive electric stimulus (US), resulting in the acquisition of a fear association, whereas another picture stimulus (CS2-) is never followed by an US. On day 2 - the memory reactivation phase, the participants are re-exposed to the conditioned stimulus without the US (CS1-), which typically triggers a conditioned fear response. After the memory reactivation we administer an oral dose of 40 mg of propranolol HCl, a β-adrenergic receptor antagonist that indirectly targets the protein synthesis required for reconsolidation by inhibiting the noradrenaline-stimulated CREB phosphorylation. On day 3 - the test phase, the participants are again exposed to the unreinforced conditioned stimuli (CS1- and CS2-) in order to measure the fear-reducing effect of the manipulation. This retention test is followed by an extinction procedure and the presentation of situational triggers to test for the return of fear. Potentiation of the eye blink startle reflex is measured as an index for conditioned fear responding. Declarative knowledge of the fear association is measured through online US expectancy ratings during each CS presentation. In contrast to extinction learning, disrupting reconsolidation targets the original fear memory thereby preventing the return of fear. Although the clinical applications are still in their infancy, disrupting reconsolidation of fear memory seems to be a promising new technique with the prospect to persistently dampen the expression of fear memory in patients suffering from anxiety disorders and other psychiatric disorders.

Shape memory thermal conduction switch

NASA Technical Reports Server (NTRS)

Krishnan, Vinu (Inventor); Vaidyanathan, Rajan (Inventor); Notardonato, William U. (Inventor)

2010-01-01

A thermal conduction switch includes a thermally-conductive first member having a first thermal contacting structure for securing the first member as a stationary member to a thermally regulated body or a body requiring thermal regulation. A movable thermally-conductive second member has a second thermal contacting surface. A thermally conductive coupler is interposed between the first member and the second member for thermally coupling the first member to the second member. At least one control spring is coupled between the first member and the second member. The control spring includes a NiTiFe comprising shape memory (SM) material that provides a phase change temperature <273 K, a transformation range <40 K, and a hysteresis of <10 K. A bias spring is between the first member and the second member. At the phase change the switch provides a distance change (displacement) between first and second member by at least 1 mm, such as 2 to 4 mm.

Large Deflection of Ideal Pseudo-Elastic Shape Memory Alloy Cantilever Beam

NASA Astrophysics Data System (ADS)

Cui, Shitang; Hu, Liming; Yan, Jun

This paper deals with the large deflections of pseudo-elastic shape memory alloy cantilever beams subjected to a concentrated load at the free end. Because of the large deflections, geometry nonlinearity arises and this analysis employs the nonlinear bending theory. The exact expression of curvature is used in the moment-curvature relationship. As a vertical force at the tip of cantilever, curvature and bending moment distribution expressions are deduced. The curvature changed distinctly when the surface material undergoes phase transformation. The length of phase transformation region was affected greatly with the force at the free end.

Characterization of mechanical properties of pseudoelastic shape memory alloys under harmonic excitation

NASA Astrophysics Data System (ADS)

Böttcher, J.; Jahn, M.; Tatzko, S.

2017-12-01

Pseudoelastic shape memory alloys exhibit a stress-induced phase transformation which leads to high strains during deformation of the material. The stress-strain characteristic during this thermomechanical process is hysteretic and results in the conversion of mechanical energy into thermal energy. This energy conversion allows for the use of shape memory alloys in vibration reduction. For the application of shape memory alloys as vibration damping devices a dynamic modeling of the material behavior is necessary. In this context experimentally determined material parameters which accurately represent the material behavior are essential for a reliable material model. Subject of this publication is the declaration of suitable material parameters for pseudoelastic shape memory alloys and the methodology of their identification from experimental investigations. The used test rig was specifically designed for the characterization of pseudoelastic shape memory alloys.

Declarative memory performance is associated with the number of sleep spindles in elderly women.

PubMed

Seeck-Hirschner, Mareen; Baier, Paul Christian; Weinhold, Sara Lena; Dittmar, Manuela; Heiermann, Steffanie; Aldenhoff, Josef B; Göder, Robert

2012-09-01

Recent evidence suggests that the sleep-dependent consolidation of declarative memory relies on the nonrapid eye movement rather than the rapid eye movement phase of sleep. In addition, it is known that aging is accompanied by changes in sleep and memory processes. Hence, the purpose of this study was to investigate the overnight consolidation of declarative memory in healthy elderly women. Sleep laboratory of University. Nineteen healthy elderly women (age range: 61-74 years). We used laboratory-based measures of sleep. To test declarative memory, the Rey-Osterrieth Complex Figure Test was performed. Declarative memory performance in elderly women was associated with Stage 2 sleep spindle density. Women characterized by high memory performance exhibited significantly higher numbers of sleep spindles and higher spindle density compared with women with generally low memory performance. The data strongly support theories suggesting a link between sleep spindle activity and declarative memory consolidation.

Preparation and characterization of triple shape memory composite foams.

PubMed

Nejad, Hossein Birjandi; Baker, Richard M; Mather, Patrick T

2014-10-28

Foams prepared from shape memory polymers (SMPs) offer the potential for low density materials that can be triggered to deploy with a large volume change, unlike their solid counterparts that do so at near-constant volume. While examples of shape memory foams have been reported in the past, they have been limited to dual SMPs: those polymers featuring one switching transition between an arbitrarily programmed shape and a single permanent shape established by constituent crosslinks. Meanwhile, advances by SMP researchers have led to several approaches toward triple- or multi-shape polymers that feature more than one switching phase and thus a multitude of temporary shapes allowing for a complex sequence of shape deployments. Here, we report the design, preparation, and characterization of a triple shape memory polymeric foam that is open cell in nature and features a two phase, crosslinked SMP with a glass transition temperature of one phase at a temperature lower than a melting transition of the second phase. The soft materials were observed to feature high fidelity, repeatable triple shape behavior, characterized in compression and demonstrated for complex deployment by fixing a combination of foam compression and bending. We further explored the wettability of the foams, revealing composition-dependent behavior favorable for future work in biomedical investigations.

Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tan, Chun Chia; Zhao, Rong, E-mail: zhao-rong@sutd.edu.sg; Chong, Tow Chong

2014-10-13

Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change Random Access Memory (PCRAM). By tuning N-TiW's material properties through doping, the heater can be tailored to optimize the access speed and programming current of PCRAM. Experiments reveal that N-TiW's resistivity increases and thermal conductivity decreases with increasing nitrogen-doping ratio, and N-TiW devices displayed (∼33% to ∼55%) reduced programming currents. However, there is a tradeoff between the current and speed for heater-based PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could be optimized to enable low RESET currents and fast access speeds.

Simulation study on heat conduction of a nanoscale phase-change random access memory cell.

PubMed

Kim, Junho; Song, Ki-Bong

2006-11-01

We have investigated heat transfer characteristics of a nano-scale phase-change random access memory (PRAM) cell using finite element method (FEM) simulation. Our PRAM cell is based on ternary chalcogenide alloy, Ge2Sb2Te5 (GST), which is used as a recording layer. For contact area of 100 x 100 nm2, simulations of crystallization and amorphization processes were carried out. Physical quantities such as electric conductivity, thermal conductivity, and specific heat were treated as temperature-dependent parameters. Through many simulations, it is concluded that one can reduce set current by decreasing both electric conductivities of amorphous GST and crystalline GST, and in addition to these conditions by decreasing electric conductivity of molten GST one can also reduce reset current significantly.

Impurities block the alpha to omega martensitic transformation in titanium.

PubMed

Hennig, Richard G; Trinkle, Dallas R; Bouchet, Johann; Srinivasan, Srivilliputhur G; Albers, Robert C; Wilkins, John W

2005-02-01

Impurities control phase stability and phase transformations in natural and man-made materials, from shape-memory alloys to steel to planetary cores. Experiments and empirical databases are still central to tuning the impurity effects. What is missing is a broad theoretical underpinning. Consider, for example, the titanium martensitic transformations: diffusionless structural transformations proceeding near the speed of sound. Pure titanium transforms from ductile alpha to brittle omega at 9 GPa, creating serious technological problems for beta-stabilized titanium alloys. Impurities in the titanium alloys A-70 and Ti-6Al-4V (wt%) suppress the transformation up to at least 35 GPa, increasing their technological utility as lightweight materials in aerospace applications. These and other empirical discoveries in technological materials call for broad theoretical understanding. Impurities pose two theoretical challenges: the effect on the relative phase stability, and the energy barrier of the transformation. Ab initio methods calculate both changes due to impurities. We show that interstitial oxygen, nitrogen and carbon retard the transformation whereas substitutional aluminium and vanadium influence the transformation by changing the d-electron concentration. The resulting microscopic picture explains the suppression of the transformation in commercial A-70 and Ti-6Al-4V alloys. In general, the effect of impurities on relative energies and energy barriers is central to understanding structural phase transformations.

Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies

NASA Astrophysics Data System (ADS)

Sahu, Smriti; Manivannan, Anbarasu; Shaik, Habibuddin; Mohan Rao, G.

2017-07-01

Reversible switching between highly resistive (binary "0") amorphous phase and low resistive (binary "1") crystalline phase of chalcogenide-based Phase Change Materials is accredited for the development of next generation high-speed, non-volatile, data storage applications. The doped Sb-Te based materials have shown enhanced electrical/optical properties, compared to Ge-Sb-Te family for high-speed memory devices. We report here the local atomic structure of as-deposited amorphous Ag5In5Sb60Te30 (AIST) and In3SbTe2 (IST) phase change materials using X-ray photoelectron and Raman spectroscopic studies. Although AIST and IST materials show identical crystallization behavior, they differ distinctly in their crystallization temperatures. Our experimental results demonstrate that the local environment of In remains identical in the amorphous phase of both AIST and IST material, irrespective of its atomic fraction. In bonds with Sb (˜44%) and Te (˜56%), thereby forming the primary matrix in IST with a very few Sb-Te bonds. Sb2Te constructs the base matrix for AIST (˜63%) along with few Sb-Sb bonds. Furthermore, an interesting assimilation of the role of small-scale dopants such as Ag and In in AIST, reveals rare bonds between themselves, while showing selective substitution in the vicinity of Sb and Te. This results in increased electronegativity difference, and consequently, the bond strength is recognized as the factor rendering stability in amorphous AIST.

Progress of the Phase-Change Optical Disk Memory

DTIC Science & Technology

2001-04-01

layer DVD for a DVD 8.5 GB ROM disk for a cinema title. Rewritable 8.5 GB phase-change dual-layer experimental results were announced in 1998". Figure...multi level recording. 1000 70 0 u p..".5 NA0.6 b uper-1l’ENS .... 60 -10 ,.00 nm _o-2o . ’-40 -30 -"a Dual C Supu]RE•S Ouat I) VR -Blue U30 -40 10 20

Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

DTIC Science & Technology

2015-09-02

Joule heating should be restricted inside a small volume of the phase-change material and heat loss by thermal conduction to the surroundings needs to...technique (see Figure 1a). TDTR is a well-established pump− probe technique, capable of measuring the cross-plane thermal conductivity of nanometer-thin...films and thermal conductance per unit area across interfaces of particular interest27 (see Supporting Information, Section 1 and Figure S1

Is residual memory variance a valid method for quantifying cognitive reserve? A longitudinal application.

PubMed

Zahodne, Laura B; Manly, Jennifer J; Brickman, Adam M; Narkhede, Atul; Griffith, Erica Y; Guzman, Vanessa A; Schupf, Nicole; Stern, Yaakov

2015-10-01

Cognitive reserve describes the mismatch between brain integrity and cognitive performance. Older adults with high cognitive reserve are more resilient to age-related brain pathology. Traditionally, cognitive reserve is indexed indirectly via static proxy variables (e.g., years of education). More recently, cross-sectional studies have suggested that reserve can be expressed as residual variance in episodic memory performance that remains after accounting for demographic factors and brain pathology (whole brain, hippocampal, and white matter hyperintensity volumes). The present study extends these methods to a longitudinal framework in a community-based cohort of 244 older adults who underwent two comprehensive neuropsychological and structural magnetic resonance imaging sessions over 4.6 years. On average, residual memory variance decreased over time, consistent with the idea that cognitive reserve is depleted over time. Individual differences in change in residual memory variance predicted incident dementia, independent of baseline residual memory variance. Multiple-group latent difference score models revealed tighter coupling between brain and language changes among individuals with decreasing residual memory variance. These results suggest that changes in residual memory variance may capture a dynamic aspect of cognitive reserve and could be a useful way to summarize individual cognitive responses to brain changes. Change in residual memory variance among initially non-demented older adults was a better predictor of incident dementia than residual memory variance measured at one time-point. Copyright © 2015. Published by Elsevier Ltd.

Is residual memory variance a valid method for quantifying cognitive reserve? A longitudinal application

PubMed Central

Zahodne, Laura B.; Manly, Jennifer J.; Brickman, Adam M.; Narkhede, Atul; Griffith, Erica Y.; Guzman, Vanessa A.; Schupf, Nicole; Stern, Yaakov

2016-01-01

Cognitive reserve describes the mismatch between brain integrity and cognitive performance. Older adults with high cognitive reserve are more resilient to age-related brain pathology. Traditionally, cognitive reserve is indexed indirectly via static proxy variables (e.g., years of education). More recently, cross-sectional studies have suggested that reserve can be expressed as residual variance in episodic memory performance that remains after accounting for demographic factors and brain pathology (whole brain, hippocampal, and white matter hyperintensity volumes). The present study extends these methods to a longitudinal framework in a community-based cohort of 244 older adults who underwent two comprehensive neuropsychological and structural magnetic resonance imaging sessions over 4.6 years. On average, residual memory variance decreased over time, consistent with the idea that cognitive reserve is depleted over time. Individual differences in change in residual memory variance predicted incident dementia, independent of baseline residual memory variance. Multiple-group latent difference score models revealed tighter coupling between brain and language changes among individuals with decreasing residual memory variance. These results suggest that changes in residual memory variance may capture a dynamic aspect of cognitive reserve and could be a useful way to summarize individual cognitive responses to brain changes. Change in residual memory variance among initially non-demented older adults was a better predictor of incident dementia than residual memory variance measured at one time-point. PMID:26348002

Constitutive modeling of glassy shape memory polymers

NASA Astrophysics Data System (ADS)

Khanolkar, Mahesh

The aim of this research is to develop constitutive models for non-linear materials. Here, issues related for developing constitutive model for glassy shape memory polymers are addressed in detail. Shape memory polymers are novel material that can be easily formed into complex shapes, retaining memory of their original shape even after undergoing large deformations. The temporary shape is stable and return to the original shape is triggered by a suitable mechanism such heating the polymer above a transition temperature. Glassy shape memory polymers are called glassy because the temporary shape is fixed by the formation of a glassy solid, while return to the original shape is due to the melting of this glassy phase. The constitutive model has been developed to capture the thermo-mechanical behavior of glassy shape memory polymers using elements of nonlinear mechanics and polymer physics. The key feature of this framework is that a body can exist stress free in numerous natural configurations, the underlying natural configuration of the body changing during the process, with the response of the body being elastic from these evolving natural configurations. The aim of this research is to formulate a constitutive model for glassy shape memory polymers (GSMP) which takes in to account the fact that the stress-strain response depends on thermal expansion of polymers. The model developed is for the original amorphous phase, the temporary glassy phase and transition between these phases. The glass transition process has been modeled using a framework that was developed recently for studying crystallization in polymers and is based on the theory of multiple natural configurations. Using the same frame work, the melting of the glassy phase to capture the return of the polymer to its original shape is also modeled. The effect of nanoreinforcement on the response of shape memory polymers (GSMP) is studied and a model is developed. In addition to modeling and solving boundary value problems for GSMP's, problems of importance for CSMP, specifically a shape memory cycle (Torsion of a Cylinder) is solved using the developed crystallizable shape memory polymer model. To solve complex boundary value problems in realistic geometries a user material subroutine (UMAT) for GSMP model has been developed for use in conjunction with the commercial finite element software ABAQUS. The accuracy of the UMAT has been verified by testing it against problems for which the results are known.

High Cycle-life Shape Memory Polymer at High Temperature

PubMed Central

Kong, Deyan; Xiao, Xinli

2016-01-01

High cycle-life is important for shape memory materials exposed to numerous cycles, and here we report shape memory polyimide that maintained both high shape fixity (Rf) and shape recovery (Rr) during the more than 1000 bending cycles tested. Its critical stress is 2.78 MPa at 250 °C, and the shape recovery process can produce stored energy of 0.218 J g−1 at the efficiency of 31.3%. Its high Rf is determined by the large difference in storage modulus at rubbery and glassy states, while the high Rr mainly originates from its permanent phase composed of strong π-π interactions and massive chain entanglements. Both difference in storage modulus and overall permanent phase were preserved during the bending deformation cycles, and thus high Rf and Rr were observed in every cycle and the high cycle-life will expand application areas of SMPs enormously. PMID:27641148

Coherent Optical Memory with High Storage Efficiency and Large Fractional Delay

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A.

2013-02-01

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Coherent optical memory with high storage efficiency and large fractional delay.

PubMed

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A

2013-02-22

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Ziyao; Yang, Qu; Liu, Ming; Zhang, Zhiguo; Zhang, Xinyang; Sun, Dazhi; Nan, Tianxiang; Sun, Nianxiang; Chen, Xing

2015-04-01

Antiferroelectric (AFE) materials with adjacent dipoles oriented in antiparallel directions have a double polarization hysteresis loops. An electric field (E-field)-induced AFE-ferroelectric (FE) phase transition takes place in such materials, leading to a large lattice strain and energy change. The high dielectric constant and the distinct phase transition in AFE materials provide great opportunities for the realization of energy storage devices like super-capacitors and energy conversion devices such as AFE MEMS applications. Lots of work has been done in this field since 60-70 s. Recently, the strain tuning of the spin, charge and orbital orderings and their interactions in complex oxides and multiferroic heterostructures have received great attention. In these systems, a single control parameter of lattice strain is used to control lattice-spin, lattice-phonon, and lattice-charge interactions and tailor properties or create a transition between distinct magnetic/electronic phases. Due to the large strain/stress arising from the phase transition, AFE materials are great candidates for integrating with ferromagnetic (FM) materials to realize in situ manipulation of magnetism and lattice-ordered parameters by voltage. In this paper, we introduce the AFE material and it's applications shortly and then review the recent progress in AFEs based on multiferroic heterostructures. These new multiferroic materials could pave a new way towards next generation light, compact, fast and energy efficient voltage tunable RF/microwave, spintronic and memory devices promising approaches to in situ manipulation of lattice-coupled order parameters is to grow epitaxial oxide films on FE/ferroelastic substrates.

Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing in Phase-Change Memory Materials.

PubMed

Skelton, Jonathan M; Loke, Desmond; Lee, Taehoon; Elliott, Stephen R

2015-07-08

We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-change material, Ge2Sb2Te5, using ab initio molecular-dynamics simulations. Stepwise changes in structural order in response to temperature pulses of varying length and duration are observed, and a good reproduction of the spike-timing-dependent plasticity observed in nanoelectronic synapses is demonstrated. Short above-melting pulses lead to instantaneous loss of structural and chemical order, followed by delayed partial recovery upon structural relaxation. We also investigate the link between structural order and electrical and optical properties. These results pave the way toward a first-principles understanding of phase-change physics beyond binary switching.

Brillouin-Mandelstam spectroscopy of standing spin waves in a ferrite waveguide

NASA Astrophysics Data System (ADS)

Balinskiy, Michael; Kargar, Fariborz; Chiang, Howard; Balandin, Alexander A.; Khitun, Alexander G.

2018-05-01

This article reports results of experimental investigation of the spin wave interference over large distances in the Y3Fe2(FeO4)3 waveguide using Brillouin-Mandelstam spectroscopy. Two coherent spin waves are excited by the micro-antennas fabricated at the edges of the waveguide. The amplitudes of the input spin waves are adjusted to provide approximately the same intensity in the central region of the waveguide. The relative phase between the excited spin waves is controlled by the phase shifter. The change of the local intensity distribution in the standing spin wave is monitored using Brillouin-Mandelstam light scattering spectroscopy. Experimental data demonstrate the oscillation of the scattered light intensity depending on the relative phase of the interfering spin waves. The oscillations of the intensity, tunable via the relative phase shift, are observed as far as 7.5 mm away from the spin-wave generating antennas at room temperature. The obtained results are important for developing techniques for remote control of spin currents, with potential applications in spin-based memory and logic devices.

Parietal EEG alpha suppression time of memory retrieval reflects memory load while the alpha power of memory maintenance is a composite of the visual process according to simultaneous and successive Sternberg memory tasks.

PubMed

Okuhata, Shiho; Kusanagi, Takuya; Kobayashi, Tetsuo

2013-10-25

The present study investigated EEG alpha activity during visual Sternberg memory tasks using two different stimulus presentation modes to elucidate how the presentation mode affected parietal alpha activity. EEGs were recorded from 10 healthy adults during the Sternberg tasks in which memory items were presented simultaneously and successively. EEG power and suppression time (ST) in the alpha band (8-13Hz) were computed for the memory maintenance and retrieval phases. The alpha activity differed according to the presentation mode during the maintenance phase but not during the retrieval phase. Results indicated that parietal alpha power recorded during the maintenance phase did not reflect the memory load alone. In contrast, ST during the retrieval phase increased with the memory load for both presentation modes, indicating a serial memory scanning process, regardless of the presentation mode. These results indicate that there was a dynamic transition in the memory process from the maintenance phase, which was sensitive to external factors, toward the retrieval phase, during which the process converged on the sequential scanning process, the Sternberg task essentially required. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Gold fillings unravel the vacancy role in the phase transition of GeTe

NASA Astrophysics Data System (ADS)

Feng, Jinlong; Xu, Meng; Wang, Xiaojie; Lin, Qi; Cheng, Xiaomin; Xu, Ming; Tong, Hao; Miao, Xiangshui

2018-02-01

Phase change memory (PCM) is an important candidate for future memory devices. The crystalline phase of PCM materials contains abundant intrinsic vacancies, which plays an important role in the rapid phase transition upon memory switching. However, few experimental efforts have been invested to study these invisible entities. In this work, Au dopants are alloyed into the crystalline GeTe to fill the intrinsic Ge vacancies so that the role of these vacancies in the amorphization of GeTe can be indirectly studied. As a result, the reduction of Ge vacancies induced by Au dopants hampers the amorphization of GeTe as the activation energy of this process becomes higher. This is because the vacancy-interrupted lattice can be "repaired" by Au dopants with the recovery of bond connectivity. Our results demonstrate the importance of vacancies in the phase transition of chalcogenides, and we employ the percolation theory to explain the impact of these intrinsic defects on this vacancy-ridden crystal quantitatively. Specifically, the threshold of amorphization increases with the decrease in vacancies. The understanding of the vacancy effect sheds light on the long-standing puzzle of the mechanism of ultra-fast phase transition in PCMs. It also paves the way for designing low-power-consumption electronic devices by reducing the threshold of amorphization in chalcogenides.

The effect of Ti-B on stabilization of Cu-Zn-Al martensite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stipcich, M.; Romero, R.

1998-10-05

The application of shape memory effect in devices requires, in many cases, stable and reliable transformation temperatures. However, as a consequence of diffusional processes, in Cu-based shape memory alloys, reverse transformation temperature significantly rises after aging at temperatures above room temperature. This generally unwanted behavior is usually referred to as the stabilization of martensite. Numerous investigations have been carried out on this subject as reviewed by Ahlers and Chandrasekaran et al. Within the Cu-based alloys the Cu-Zn-Al are claimed to be more prone to stabilization than Cu-Al-Ni on aging. It has been proposed that in the Cu-Zn-Al the stabilization ismore » due to the interchange of Cu and Zn atoms assisted by vacancies, changing, consequently, the long range order inherited from the {beta} phase. In the present work, the authors investigate the stabilization behavior of polycrystalline samples of stress induced Cu-Zn-Al and Cu-Zn-Al-B martensite.« less

Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching

NASA Astrophysics Data System (ADS)

Pigot, Corentin; Gilibert, Fabien; Reyboz, Marina; Bocquet, Marc; Zuliani, Paola; Portal, Jean-Michel

2018-04-01

Phase-change memory (PCM) compact modeling of the threshold switching based on a thermal runaway in Poole–Frenkel conduction is proposed. Although this approach is often used in physical models, this is the first time it is implemented in a compact model. The model accuracy is validated by a good correlation between simulations and experimental data collected on a PCM cell embedded in a 90 nm technology. A wide range of intermediate states is measured and accurately modeled with a single set of parameters, allowing multilevel programing. A good convergence is exhibited even in snapback simulation owing to this fully continuous approach. Moreover, threshold properties extraction indicates a thermally enhanced switching, which validates the basic hypothesis of the model. Finally, it is shown that this model is compliant with a new drift-resilient cell-state metric. Once enriched with a phase transition module, this compact model is ready to be implemented in circuit simulators.

Effect of Nano CeO2 Addition on the Microstructure and Properties of a Cu-Al-Ni Shape Memory Alloy

NASA Astrophysics Data System (ADS)

Pandey, Abhishek; Jain, Ashish Kumar; Hussain, Shahadat; Sampath, V.; Dasgupta, Rupa

2016-08-01

This article deals with the effect of adding nano CeO2 to act as a grain pinner/refiner to a known Cu-Al-Ni shape memory alloy. Elements were taken in a predefined ratio to prepare 300 g alloy per batch and melted in an induction furnace. Casting was followed by homogenization at 1173 K (900 °C) and rolling to make sheets of 0.5-mm thickness. Further, samples were characterized for microstructure using optical and electron microscope, hardness, and different phase studies by X-ray and transformation temperatures by differential scanning calorimetry. X-ray peak broadenings and changes were investigated to estimate the crystallite size, lattice strain, and phase changes due to different processing steps. A nearly uniform distribution of CeO2 and better martensitic structure were observed with increasing CeO2. The addition of CeO2 also shows a visible effect on the transformation temperature and phase formation.

Optical and magneto-optical studies of martensitic transformation in Ni-Mn-Ga magnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Beran, L.; Cejpek, P.; Kulda, M.; Antos, R.; Holy, V.; Veis, M.; Straka, L.; Heczko, O.

2015-05-01

Optical and magneto-optical properties of single crystal of Ni50.1Mn28.4Ga21.5 magnetic shape memory alloy during its transformation from martensite to austenite phase were systematically studied. Crystal orientation was approximately along {100} planes of parent cubic austenite. X-ray reciprocal mapping confirmed modulated 10 M martensite phase. Temperature depended measurements of saturation magnetization revealed the martensitic transformation at 335 K during heating. Magneto-optical spectroscopy and spectroscopic ellipsometry were measured in the sample temperature range from 297 to 373 K and photon energy range from 1.2 to 6.5 eV. Magneto-optical spectra of polar Kerr rotation as well as the spectra of ellipsometric parameter Ψ exhibited significant changes when crossing the transformation temperature. These changes were assigned to different optical properties of Ni-Mn-Ga in martensite and austenite phases due to modification of electronic structure near the Fermi energy during martensitic transformation.

Selective visual processing across competition episodes: a theory of task-driven visual attention and working memory

PubMed Central

Schneider, Werner X.

2013-01-01

The goal of this review is to introduce a theory of task-driven visual attention and working memory (TRAM). Based on a specific biased competition model, the ‘theory of visual attention’ (TVA) and its neural interpretation (NTVA), TRAM introduces the following assumption. First, selective visual processing over time is structured in competition episodes. Within an episode, that is, during its first two phases, a limited number of proto-objects are competitively encoded—modulated by the current task—in activation-based visual working memory (VWM). In processing phase 3, relevant VWM objects are transferred via a short-term consolidation into passive VWM. Second, each time attentional priorities change (e.g. after an eye movement), a new competition episode is initiated. Third, if a phase 3 VWM process (e.g. short-term consolidation) is not finished, whereas a new episode is called, a protective maintenance process allows its completion. After a VWM object change, its protective maintenance process is followed by an encapsulation of the VWM object causing attentional resource costs in trailing competition episodes. Viewed from this perspective, a new explanation of key findings of the attentional blink will be offered. Finally, a new suggestion will be made as to how VWM items might interact with visual search processes. PMID:24018722

Dually actuated triple shape memory polymers of cross-linked polycyclooctene-carbon nanotube/polyethylene nanocomposites.

PubMed

Wang, Zhenwen; Zhao, Jun; Chen, Min; Yang, Minhao; Tang, Luyang; Dang, Zhi-Min; Chen, Fenghua; Huang, Miaoming; Dong, Xia

2014-11-26

In this work, electrically and thermally actuated triple shape memory polymers (SMPs) of chemically cross-linked polycyclooctene (PCO)-multiwalled carbon nanotube (MWCNT)/polyethylene (PE) nanocomposites with co-continuous structure and selective distribution of fillers in PCO phase are prepared. We systematically studied not only the microstructure including morphology and fillers' selective distribution in one phase of the PCO/PE blends, but also the macroscopic properties including thermal, mechanical, and electrical properties. The co-continuous window of the immiscible PCO/PE blends is found to be the volume fraction of PCO (vPCO) of ca. 40-70 vol %. The selective distribution of fillers in one phase of co-continuous blends is obtained by a masterbatch technique. The prepared triple SMP materials show pronounced triple shape memory effects (SMEs) on the dynamic mechanical thermal analysis (DMTA) and the visual observation by both thermal and electric actuations. Such polyolefin samples with well-defined microstructure, electrical actuation, and triple SMEs might have potential applications as, for example, multiple autochoke elements for engines, self-adjusting orthodontic wires, and ophthalmic devices.

Design of single phase inverter using microcontroller assisted by data processing applications software

NASA Astrophysics Data System (ADS)

Ismail, K.; Muharam, A.; Amin; Widodo Budi, S.

2015-12-01

Inverter is widely used for industrial, office, and residential purposes. Inverter supports the development of alternative energy such as solar cells, wind turbines and fuel cells by converting dc voltage to ac voltage. Inverter has been made with a variety of hardware and software combinations, such as the use of pure analog circuit and various types of microcontroller as controller. When using pure analog circuit, modification would be difficult because it will change the entire hardware components. In inverter with microcontroller based design (with software), calculations to generate AC modulation is done in the microcontroller. This increases programming complexity and amount of coding downloaded to the microcontroller chip (capacity flash memory in the microcontroller is limited). This paper discusses the design of a single phase inverter using unipolar modulation of sine wave and triangular wave, which is done outside the microcontroller using data processing software application (Microsoft Excel), result shows that complexity programming was reduce and resolution sampling data is very influence to THD. Resolution sampling must taking ½ A degree to get best THD (15.8%).

Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

NASA Astrophysics Data System (ADS)

Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

2018-03-01

Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

Parallel computing for probabilistic fatigue analysis

NASA Technical Reports Server (NTRS)

Sues, Robert H.; Lua, Yuan J.; Smith, Mark D.

1993-01-01

This paper presents the results of Phase I research to investigate the most effective parallel processing software strategies and hardware configurations for probabilistic structural analysis. We investigate the efficiency of both shared and distributed-memory architectures via a probabilistic fatigue life analysis problem. We also present a parallel programming approach, the virtual shared-memory paradigm, that is applicable across both types of hardware. Using this approach, problems can be solved on a variety of parallel configurations, including networks of single or multiprocessor workstations. We conclude that it is possible to effectively parallelize probabilistic fatigue analysis codes; however, special strategies will be needed to achieve large-scale parallelism to keep large number of processors busy and to treat problems with the large memory requirements encountered in practice. We also conclude that distributed-memory architecture is preferable to shared-memory for achieving large scale parallelism; however, in the future, the currently emerging hybrid-memory architectures will likely be optimal.

The costs of changing an intended action: movement planning, but not execution, interferes with verbal working memory.

PubMed

Spiegel, M A; Koester, D; Weigelt, M; Schack, T

2012-02-16

How much cognitive effort does it take to change a movement plan? In previous studies, it has been shown that humans plan and represent actions in advance, but it remains unclear whether or not action planning and verbal working memory share cognitive resources. Using a novel experimental paradigm, we combined in two experiments a grasp-to-place task with a verbal working memory task. Participants planned a placing movement toward one of two target positions and subsequently encoded and maintained visually presented letters. Both experiments revealed that re-planning the intended action reduced letter recall performance; execution time, however, was not influenced by action modifications. The results of Experiment 2 suggest that the action's interference with verbal working memory arose during the planning rather than the execution phase of the movement. Together, our results strongly suggest that movement planning and verbal working memory share common cognitive resources. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

Effect of Graphene Addition on Shape Memory Behavior of Epoxy Resins

NASA Technical Reports Server (NTRS)

Williams, Tiffany; Meador, Michael; Miller, Sandi; Scheiman, Daniel

2011-01-01

Shape memory polymers (SMPs) and composites are a special class of smart materials known for their ability to change size and shape upon exposure to an external stimulus (e.g. light, heat, pH, or magnetic field). These materials are commonly used for biomedical applications; however, recent attempts have been made towards developing SMPs and composites for use in aircraft and space applications. Implementing SMPs and composites to create a shape change effect in some aircraft structures could potentially reduce drag, decrease fuel consumption, and improve engine performance. This paper discusses the development of suitable materials to use in morphing aircraft structures. Thermally responsive epoxy SMPs and nanocomposites were developed and the shape memory behavior and thermo-mechanical properties were studied. Overall, preliminary results from dynamic mechanical analysis (DMA) showed that thermally actuated shape memory epoxies and nanocomposites possessed Tgs near approximately 168 C. When graphene nanofiller was added, the storage modulus and crosslinking density decreased. On the other hand, the addition of graphene enhanced the recovery behavior of the shape memory nanocomposites. It was assumed that the addition of graphene improved shape memory recovery by reducing the crosslinking density and increasing the elasticity of the nanocomposites.

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oosthoek, J. L. M.; Kooi, B. J., E-mail: B.J.Kooi@rug.nl; Voogt, F. C.

2015-02-14

Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament ismore » formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.« less

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

NASA Astrophysics Data System (ADS)

Oosthoek, J. L. M.; Voogt, F. C.; Attenborough, K.; Verheijen, M. A.; Hurkx, G. A. M.; Gravesteijn, D. J.; Kooi, B. J.

2015-02-01

Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament is formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.

Microscopic Mechanism of Doping-Induced Kinetically Constrained Crystallization in Phase-Change Materials.

PubMed

Lee, Tae Hoon; Loke, Desmond; Elliott, Stephen R

2015-10-07

A comprehensive microscopic mechanism of doping-induced kinetically constrained crystallization in phase-change materials is provided by investigating structural and dynamical dopant characteristics via ab initio molecular dynamics simulations. The information gained from this study may provide a basis for a fast screening of dopant species for electronic memory devices, or for understanding the general physics involved in the crystallization of doped glasses. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In-situ crystallization of GeTe\\GaSb phase change memory stacked films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velea, A., E-mail: alin.velea@psi.ch; National Institute of Materials Physics, RO-077125 Magurele, Ilfov; Borca, C. N.

2014-12-21

Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C,more » the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.« less

An All-Organic Composite System for Resistive Change Memory via the Self-Assembly of Plastic-Crystalline Molecules.

PubMed

Cha, An-Na; Lee, Sang-A; Bae, Sukang; Lee, Sang Hyun; Lee, Dong Su; Wang, Gunuk; Kim, Tae-Wook

2017-01-25

An all-organic composite system was introduced as an active component for organic resistive memory applications. The active layer was prepared by mixing a highly polar plastic-crystalline organic molecule (succinonitrile, SN) into an insulating polymer (poly(methyl methacrylate), PMMA). As increasing concentrations of SN from 0 to 3.0 wt % were added to solutions of different concentrations of PMMA, we observed distinguishable microscopic surface structures on blended films of SN and PMMA at certain concentrations after the spin-casting process. The structures were organic dormant volcanos composed of micron-scale PMMA craters and disk type SN lava. Atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), scanning electron microscopy (SEM), and energy dispersive X-ray spectrometer (EDX) analysis showed that these structures were located in the middle of the film. Self-assembly of the plastic-crystalline molecules resulted in the phase separation of the SN:PMMA mixture during solvent evaporation. The organic craters remained at the surface after the spin-casting process, indicative of the formation of an all-organic composite film. Because one organic crater contains one SN disk, our system has a coplanar monolayer disk composite system, indicative of the simplest composite type of organic memory system. Current-voltage (I-V) characteristics of the composite films with organic craters revealed that our all-organic composite system showed unipolar type resistive switching behavior. From logarithmic I-V characteristics, we found that the current flow was governed by space charge limited current (SCLC). From these results, we believe that a plastic-crystalline molecule-polymer composite system is one of the most reliable ways to develop organic composite systems as potential candidates for the active components of organic resistive memory applications.

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

NASA Astrophysics Data System (ADS)

Veis, M.; Beran, L.; Zahradnik, M.; Antos, R.; Straka, L.; Kopecek, J.; Fekete, L.; Heczko, O.

2014-05-01

Magneto-optical properties of single crystal of Ni50.1Mn28.4Ga21.5 magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along {100} planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323 K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4 eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

Leptin attenuates the detrimental effects of β-amyloid on spatial memory and hippocampal later-phase long term potentiation in rats.

PubMed

Tong, Jia-Qing; Zhang, Jun; Hao, Ming; Yang, Ju; Han, Yu-Fei; Liu, Xiao-Jie; Shi, Hui; Wu, Mei-Na; Liu, Qing-Song; Qi, Jin-Shun

2015-07-01

β-Amyloid (Aβ) is the main component of amyloid plaques developed in the brain of patients with Alzheimer's disease (AD). The increasing burden of Aβ in the cortex and hippocampus is closely correlated with memory loss and cognition deficits in AD. Recently, leptin, a 16kD peptide derived mainly from white adipocyte tissue, has been appreciated for its neuroprotective function, although less is known about the effects of leptin on spatial memory and synaptic plasticity. The present study investigated the neuroprotective effects of leptin against Aβ-induced deficits in spatial memory and in vivo hippocampal late-phase long-term potentiation (L-LTP) in rats. Y maze spontaneous alternation was used to assess short term working memory, and the Morris water maze task was used to assess long term reference memory. Hippocampal field potential recordings were performed to observe changes in L-LTP. We found that chronically intracerebroventricular injection of leptin (1μg) effectively alleviated Aβ1-42 (20μg)-induced spatial memory impairments of Y maze spontaneous alternation and Morris water maze. In addition, chronic administration of leptin also reversed Aβ1-42-induced suppression of in vivo hippocampal L-LTP in rats. Together, these results suggest that chronic leptin treatments reversed Aβ-induced deficits in learning and memory and the maintenance of L-LTP. Copyright © 2015 Elsevier Inc. All rights reserved.

Anodal tDCS Over the Left DLPFC Did Not Affect the Encoding and Retrieval of Verbal Declarative Information.

PubMed

de Lara, Gabriel A; Knechtges, Philipp N; Paulus, Walter; Antal, Andrea

2017-01-01

Several studies imply that anodal transcranial direct current stimulation (tDCS) over the left dorsolateral prefrontal cortex (DLPFC) can modulate the formation of verbal episodic memories. The aim of this study was to test if tDCS through a multi-electrode Laplacian montage over the left DLPFC could differentially modulate declarative memory performance depending on the application phase. Two groups of healthy participants ( n = 2 × 15) received 1 mA anodal or sham stimulation for 20 min during the encoding or during the recall phase on a delayed cued-recall, using a randomized, double-blinded, repeated-measures experimental design. Memory performance was assessed at two time points: 10 min and 24 h after learning. We found no significant difference between anodal and sham stimulation with regard to the memory scores between conditions (stimulation during encoding or recall) or between time points, suggesting that anodal tDCS over the left DLPFC with these stimulation parameters had no effect on the encoding and the consolidation of associative verbal content.

Anodal tDCS Over the Left DLPFC Did Not Affect the Encoding and Retrieval of Verbal Declarative Information

PubMed Central

de Lara, Gabriel A.; Knechtges, Philipp N.; Paulus, Walter; Antal, Andrea

2017-01-01

Several studies imply that anodal transcranial direct current stimulation (tDCS) over the left dorsolateral prefrontal cortex (DLPFC) can modulate the formation of verbal episodic memories. The aim of this study was to test if tDCS through a multi-electrode Laplacian montage over the left DLPFC could differentially modulate declarative memory performance depending on the application phase. Two groups of healthy participants (n = 2 × 15) received 1 mA anodal or sham stimulation for 20 min during the encoding or during the recall phase on a delayed cued-recall, using a randomized, double-blinded, repeated-measures experimental design. Memory performance was assessed at two time points: 10 min and 24 h after learning. We found no significant difference between anodal and sham stimulation with regard to the memory scores between conditions (stimulation during encoding or recall) or between time points, suggesting that anodal tDCS over the left DLPFC with these stimulation parameters had no effect on the encoding and the consolidation of associative verbal content. PMID:28848378

Atomistic to Continuum Multiscale and Multiphysics Simulation of NiTi Shape Memory Alloy

NASA Astrophysics Data System (ADS)

Gur, Sourav

Shape memory alloys (SMAs) are materials that show reversible, thermo-elastic, diffusionless, displacive (solid to solid) phase transformation, due to the application of temperature and/ or stress (/strain). Among different SMAs, NiTi is a popular one. NiTi shows reversible phase transformation, the shape memory effect (SME), where irreversible deformations are recovered upon heating, and superelasticity (SE), where large strains imposed at high enough temperatures are fully recovered. Phase transformation process in NiTi SMA is a very complex process that involves the competition between developed internal strain and phonon dispersion instability. In NiTi SMA, phase transformation occurs over a wide range of temperature and/ or stress (strain) which involves, evolution of different crystalline phases (cubic austenite i.e. B2, different monoclinic variant of martensite i.e. B19', and orthorhombic B19 or BCO structures). Further, it is observed from experimental and computational studies that the evolution kinetics and growth rate of different phases in NiTi SMA vary significantly over a wide spectrum of spatio-temporal scales, especially with length scales. At nano-meter length scale, phase transformation temperatures, critical transformation stress (or strain) and phase fraction evolution change significantly with sample or simulation cell size and grain size. Even, below a critical length scale, the phase transformation process stops. All these aspects make NiTi SMA very interesting to the science and engineering research community and in this context, the present focuses on the following aspects. At first this study address the stability, evolution and growth kinetics of different phases (B2 and variants of B19'), at different length scales, starting from the atomic level and ending at the continuum macroscopic level. The effects of simulation cell size, grain size, and presence of free surface and grain boundary on the phase transformation process (transformation temperature, phase fraction evolution kinetics due to temperature) are also demonstrated herein. Next, to couple and transfer the statistical information of length scale dependent phase transformation process, multiscale/ multiphysics methods are used. Here, the computational difficulty from the fact that the representative governing equations (i.e. different sub-methods such as molecular dynamics simulations, phase field simulations and continuum level constitutive/ material models) are only valid or can be implemented over a range of spatiotemporal scales. Therefore, in the present study, a wavelet based multiscale coupling method is used, where simulation results (phase fraction evolution kinetics) from different sub-methods are linked via concurrent multiscale coupling fashion. Finally, these multiscale/ multiphysics simulation results are used to develop/ modify the macro/ continuum scale thermo-mechanical constitutive relations for NiTi SMA. Finally, the improved material model is used to model new devices, such as thermal diodes and smart dampers.

Biomaterial-based Memory Device Development by Conducting Metallic DNA

DTIC Science & Technology

2013-05-28

time. Therefore, we have created a multiple-states memory system . This is the first multi-states resistance memory device by using bio-nanowire of the...world. Based on this achievement, logic device and application will be developed in the near future, too. Moreover, by using Ni-DNA detection system ...ions in DNA can change the resistance of Ni-DNA by applying different polar bias and time. Therefore, we have created a multiple-states memory system

Stress enhances the consolidation of extinction memory in a predictive learning task

PubMed Central

Hamacher-Dang, Tanja C.; Engler, Harald; Schedlowski, Manfred; Wolf, Oliver T.

2013-01-01

Extinction is not always permanent, as indicated by several types of recovery effects, such as the renewal effect, which may occur after a context change and points towards the importance of contextual cues. Strengthening the retrieval of extinction memory is a crucial aim of extinction-based psychotherapeutic treatments of anxiety disorders to prevent relapse. Stress is known to modulate learning and memory, with mostly enhancing effects on memory consolidation. However, whether such a consolidation-enhancing effect of acute stress can also be found for extinction memory has not yet been examined in humans. In this study, we investigated the effect of stress after extinction learning on the retrieval of extinction memory in a predictive learning renewal paradigm. Participants took the part of being the doctor of a fictitious patient and learned to predict whether certain food stimuli were associated with “stomach trouble” in two different restaurants (contexts). On the first day, critical stimuli were associated with stomach trouble in context A (acquisition phase). On the second day, these associations were extinguished in context B. Directly after extinction, participants were either exposed to a stressor (socially evaluated cold pressor test; n = 22) or a control condition (n = 24). On the third day, we tested retrieval of critical associations in contexts A and B. Participants exposed to stress after extinction exhibited a reduced recovery of responding at test in context B, suggesting that stress may context-dependently enhance the consolidation of extinction memory. Furthermore, the increase in cortisol in response to the stressor was negatively correlated with the recovery of responding in context A. Our findings suggest that in parallel to the known effects of stress on the consolidation of episodic memory, stress also enhances the consolidation of extinction memory, which might be relevant for potential applications in extinction-based psychotherapy. PMID:23986667

Electrical Switching of Perovskite Thin-Film Resistors

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Low cost omega navigation receiver

NASA Technical Reports Server (NTRS)

Lilley, R. W.

1974-01-01

The development of a low cost Omega navigation receiver is discussed. Emphasis is placed on the completion and testing of a modular, multipurpose Omega receiver which utilizes a digital memory-aided, phase-locked loop to provide phase measurement data to a variety of applications interfaces. The functional units contained in the prototype device are described. The receiver is capable of receiving and storing phase measurements for up to eight Omega signals and computes two switch-selectable lines of position, displaying this navigation data in chart-recorded form.

Annealing effects on the structural and magnetic properties of off-stoichiometric Fe-Mn-Ga ferromagnetic shape memory alloys

DOE PAGES

Chen, Yan; Bei, Hongbin; Dela Cruz, Clarina R; ...

2016-05-07

Annealing plays an important role in modifying structures and properties of ferromagnetic shape memory alloys (FSMAs). The annealing effect on the structures and magnetic properties of off-stoichiometric Fe 45Mn 26Ga 29 FSMA has been investigated at different elevated temperatures. Rietveld refinements of neutron diffraction patterns display that the formation of the γ phase in Fe 45Mn 26Ga 29 annealed at 1073 K increases the martensitic transformation temperature and reduces the thermal hysteresis in comparison to the homogenized sample. The phase segregation of a Fe-rich cubic phase and a Ga-rich cubic phase occurs at the annealing temperature of 773 K. Themore » atomic occupancies of the alloys are determined thanks to the neutron's capability of differentiating transition metals. The annealing effects at different temperatures introduce a different magnetic characteristic that is associated with distinctive structural changes in the crystal.« less

Nanoscale phase transition behavior of shape memory alloys — closed form solution of 1D effective modelling

NASA Astrophysics Data System (ADS)

Li, M. P.; Sun, Q. P.

2018-01-01

We investigate the roles of grain size (lg) and grain boundary thickness (lb) on the stress-induced phase transition (PT) behaviors of nanocrystalline shape memory alloys (SMAs) by using a Core-shell type "crystallite-amorphous composite" model. A non-dimensionalized length scale lbarg(=lg /lb) is identified as the governing parameter which is indicative of the energy competition between the crystallite and the grain boundary. Closed form analytical solutions of a reduced effective 1D model with embedded microstructure length scales of lg and lb are presented in this paper. It is shown that, with lbarg reduction, the energy of the elastic non-transformable grain boundary will gradually become dominant in the phase transition process, and eventually bring fundamental changes of the deformation behaviors: breakdown of two-phase coexistence and vanishing of superelastic hysteresis. The predictions are supported by experimental data of nanocrystalline NiTi SMAs.

"G.P.S Matrices" programme: A method to improve the mastery level of social science students in matrices operations

NASA Astrophysics Data System (ADS)

Lee, Ken Voon

2013-04-01

The purpose of this action research was to increase the mastery level of Form Five Social Science students in Tawau II National Secondary School in the operations of addition, subtraction and multiplication of matrices in Mathematics. A total of 30 students were involved. Preliminary findings through the analysis of pre-test results and questionnaire had identified the main problem faced in which the students felt confused with the application of principles of the operations of matrices when performing these operations. Therefore, an action research was conducted using an intervention programme called "G.P.S Matrices" to overcome the problem. This programme was divided into three phases. 'Gift of Matrices' phase aimed at forming matrix teaching aids. The second and third phases were 'Positioning the Elements of Matrices' and 'Strenghtening the Concept of Matrices'. These two phases were aimed at increasing the level of understanding and memory of the students towards the principles of matrix operations. Besides, this third phase was also aimed at creating an interesting learning environment. A comparison between the results of pre-test and post-test had shown a remarkable improvement in students' performances after implementing the programme. In addition, the analysis of interview findings also indicated a positive feedback on the changes in students' attitude, particularly in the aspect of students' understanding level. Moreover, the level of students' memory also increased following the use of the concrete matrix teaching aids created in phase one. Besides, teachers felt encouraging when conducive learning environment was created through students' presentation activity held in third phase. Furthermore, students were voluntarily involved in these student-centred activities. In conclusion, this research findings showed an increase in the mastery level of students in these three matrix operations and thus the objective of the research had been achieved.

Reverse Shape Memory Effect Related to α → γ Transformation in a Fe-Mn-Al-Ni Shape Memory Alloy

NASA Astrophysics Data System (ADS)

Peng, Huabei; Huang, Pan; Zhou, Tiannan; Wang, Shanling; Wen, Yuhua

2017-05-01

In this study, we investigated the shape memory behavior and phase transformations of solution-treated Fe43.61Mn34.74Al13.38Ni8.27 alloy between room temperature and 1173 K (900 °C). This alloy exhibits the reverse shape memory effect resulting from the phase transformation of α (bcc) → γ (fcc) between 673 K and 1073 K (400 °C and 800 °C) in addition to the shape memory effect resulting from the martensitic reverse transformation of γ' (fcc) → α (bcc) below 673 K (400 °C). There is a high density of hairpin-shaped dislocations in the α phase undergoing the martensitic reverse transformation of γ' → α. The lath γ phase, which preferentially nucleates and grows in the reversed α phase, has the same crystal orientation with the reverse-transformed γ' martensite. However, the vermiculate γ phase, which is precipitated in the α phase between lath γ phase, has different crystal orientations. The lath γ phase is beneficial to attaining better reverse shape memory effect than the vermiculate γ phase.

Method of preparing a two-way shape memory alloy

DOEpatents

Johnson, Alfred D.

1984-01-01

A two-way shape memory alloy, a method of training a shape memory alloy, and a heat engine employing the two-way shape memory alloy to do external work during both heating and cooling phases. The alloy is heated under a first training stress to a temperature which is above the upper operating temperature of the alloy, then cooled to a cold temperature below the zero-force transition temperature of the alloy, then deformed while applying a second training stress which is greater in magnitude than the stress at which the alloy is to be operated, then heated back to the hot temperature, changing from the second training stress back to the first training stress.

Spin transport and spin torque in antiferromagnetic devices

DOE PAGES

Zelezny, J.; Wadley, P.; Olejnik, K.; ...

2018-03-02

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelezny, J.; Wadley, P.; Olejnik, K.

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

NASA Astrophysics Data System (ADS)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Evaluation of phase transformation in ferromagnetic shape memory Fe-Pd alloy by magnetic Barkhausen noise

NASA Astrophysics Data System (ADS)

Furuya, Yasubumi; Tamoto, Shizuka; Kubota, Takeshi; Okazaki, Teiko; Hagood, Nesbitt W.; Spearing, S. Mark

2002-07-01

The possibility to detect the phase transformation with martensites by heating or cooling as well as stress-loading in ferromagnetic shape memory Fe-30at percent Pd alloy thin foil by using magnetic Markhausen noise sensor was studied. MBHN is caused by the irregular interactions between magnetic domain and thermally activated martensite twins during magnetization. In general, the envelope of the MBHN voltage versus time signals in Fe-29at percent Pd ribbon showed two peaks during magnetization, where secondary peak at intermediate state of magnetization process decreased with increasing temperature, while the MBHN envelopes in pure iron did not change with increasing temperature. The variety of MBHN due to the phase transformation was apt to arise at higher frequency part of spectrum during intermediate state of magnetization process and it decreased with disappearance of martensite twins. Besides, MBHN increased monotonically with increasing loading stress and then, it decreased with unloading, however MBHN showed large hysteresis between loading and unloading passes. Based on the experimental results from MBHN measurements for both thermoelastic and stress-induced martensite phase transformations in Fe-30at percent Pd ribbon samples, MBHN method seems a useful technique to non-destructive evaluation of martensite phase transformation of ferromagnetic shape memory alloy.

Subtle persistent working memory and selective attention deficits in women with premenstrual syndrome.

PubMed

Slyepchenko, Anastasiya; Lokuge, Sonali; Nicholls, Brianne; Steiner, Meir; Hall, Geoffrey B C; Soares, Claudio N; Frey, Benicio N

2017-03-01

As a recurrent, cyclical phenomenon, premenstrual syndrome (PMS) affects a significant proportion of women of the reproductive age, and leads to regular monthly days of functional impairment. Symptoms of PMS include somatic and psychological symptoms, such as headaches, sleep disturbances, social withdrawal and mood changes, during the late luteal phase of the menstrual cycle, which alleviate during the follicular phase. This study investigated neurocognitive functioning in women with moderate to severe PMS symptoms (n=13) compared to women with mild/no PMS (n=27) through administration of a battery of neuropsychological tests during the asymptomatic follicular phase of the menstrual cycle. Relative to women with mild/no PMS symptoms, women with moderate to severe PMS showed significantly poorer accuracy and more errors of omission on the N-0-back, as well as more errors of omission on the N-2-back task, indicating the presence of impairment in selective attention and working memory. This study provides evidence of persistent, subtle working memory and selective attention difficulties in those with moderate to severe PMS during the follicular phase of the menstrual cycle. Copyright © 2017 Elsevier Ireland Ltd. All rights reserved.

Improved Damage Resistant Composite Materials Incorporating Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Paine, Jeffrey S. N.; Rogers, Craig A.

1996-01-01

Metallic shape memory alloys (SMA) such as nitinol have unique shape recovery behavior and mechanical properties associated with a material phase change that have been used in a variety of sensing and actuation applications. Recent studies have shown that integrating nitinol-SMA actuators into composite materials increases the composite material's functionality. Hybrid composites of conventional graphite/epoxy or glass/epoxy and nitinol-SMA elements can perform functions in applications where monolithic composites perform inadequately. One such application is the use of hybrid composites to function both in load bearing and armor capacities. While monolithic composites with high strength-to-weight ratios function efficiently as loadbearing structures, because of their brittle nature, impact loading can cause significant catastrophic damage. Initial composite failure modes such as delamination and matrix cracking dissipate some impact energy, but when stress exceeds the composite's ultimate strength, fiber fracture and material perforation become dominant. One of the few methods that has been developed to reduce material perforation is hybridizing polymer matrix composites with tough kevlar or high modulus polyethynylene plies. The tough fibers increase the impact resistance and the stiffer and stronger graphite fibers carry the majority of the load. Similarly, by adding nitinol-SMA elements that absorb impact energy through the stress-induced martensitic phase transformation, the composites' impact perforation resistance can be greatly enhanced. The results of drop-weight and high velocity gas-gun impact testing of various composite materials will be presented. The results demonstrate that hybridizing composites with nitinol-SMA elements significantly increases perforation resistance compared to other traditional toughening elements. Inspection of the composite specimens at various stages of perforation by optical microscope illustrates the mechanisms by which perforation is initiated. Results suggest that the out-of-plane transverse shear properties of the composite and nitinol elements have a significant effect on the perforation resistance. Applications that can utilize the hybrid composites effectively will also be presented with the experimental studies.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

NASA Astrophysics Data System (ADS)

Di Pendina, G.; Zianbetov, E.; Beigne, E.

2015-05-01

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

Decreased Load on General Motor Preparation and Visual-Working Memory while Preparing Familiar as Compared to Unfamiliar Movement Sequences

ERIC Educational Resources Information Center

De Kleine, Elian; Van der Lubbe, Rob H. J.

2011-01-01

Learning movement sequences is thought to develop from an initial controlled attentive phase to a more automatic inattentive phase. Furthermore, execution of sequences becomes faster with practice, which may result from changes at a general motor processing level rather than at an effector specific motor processing level. In the current study, we…

Formability of Annealed Ni-Ti Shape Memory Alloy Sheet

NASA Astrophysics Data System (ADS)

Fann, K. J.; Su, J. Y.; Chang, C. H.

2018-03-01

Ni-Ti shape memory alloy has two specific properties, superelasiticity and shape memory effect, and thus is widely applied in diverse industries. To extend its application, this study attempts to investigate the strength and cold formability of its sheet blank, which is annealed at various temperatures, by hardness test and by Erichsen-like cupping test. As a result, the higher the annealing temperature, the lower the hardness, the lower the maximum punch load as the sheet blank fractured, and the lower the Erichsen-like index or the lower the formability. In general, the Ni-Ti sheet after annealing has an Erichsen-like index between 8 mm and 9 mm. This study has also confirmed via DSC that the Ni-Ti shape memory alloy possesses the austenitic phase and shows the superelasticity at room temperature.

Mechanical and Infrared Thermography Analysis of Shape Memory Polyurethane

NASA Astrophysics Data System (ADS)

Pieczyska, Elzbieta Alicja; Maj, Michal; Kowalczyk-Gajewska, Katarzyna; Staszczak, Maria; Urbanski, Leszek; Tobushi, Hisaaki; Hayashi, Shunichi; Cristea, Mariana

2014-07-01

Multifunctional new material—polyurethane shape memory polymer (PU-SMP)—was subjected to tension carried out at room temperature at various strain rates. The influence of effects of thermomechanical couplings on the SMP mechanical properties was studied, based on the sample temperature changes, measured by a fast and sensitive infrared camera. It was found that the polymer deformation process strongly depends on the strain rate applied. The initial reversible strain is accompanied by a small drop in temperature, called thermoelastic effect. Its maximal value is related to the SMP yield point and increases upon increase of the strain rate. At higher strains, the stress and temperature significantly increase, caused by reorientation of the polymer molecular chains, followed by the stress drop and its subsequent increase accompanying the sample rupture. The higher strain rate, the higher stress, and temperature changes were obtained, since the deformation process was more dynamic and has occurred in almost adiabatic conditions. The constitutive model of SMP valid in finite strain regime was developed. In the proposed approach, SMP is described as a two-phase material composed of hyperelastic rubbery phase and elastic-viscoplastic glassy phase, while the volume content of phases is specified by the current temperature.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

NASA Astrophysics Data System (ADS)

Gong, Yue-Feng; Song, Zhi-Tang; Ling, Yun; Liu, Yan; Feng, Song-Lin

2009-11-01

A three-dimensional finite element model for phase change random access memory (PCRAM) is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure (HS) and the ring-type contact in bottom electrode (RIB) structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interfacial layer and building a new device structure. The simulation results indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veis, M., E-mail: veis@karlov.mff.cuni.cz; Beran, L.; Zahradnik, M.

2014-05-07

Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323 K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4 eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significantmore » spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.« less

Framework for architecture-independent run-time reconfigurable applications

NASA Astrophysics Data System (ADS)

Lehn, David I.; Hudson, Rhett D.; Athanas, Peter M.

2000-10-01

Configurable Computing Machines (CCMs) have emerged as a technology with the computational benefits of custom ASICs as well as the flexibility and reconfigurability of general-purpose microprocessors. Significant effort from the research community has focused on techniques to move this reconfigurability from a rapid application development tool to a run-time tool. This requires the ability to change the hardware design while the application is executing and is known as Run-Time Reconfiguration (RTR). Widespread acceptance of run-time reconfigurable custom computing depends upon the existence of high-level automated design tools. Such tools must reduce the designers effort to port applications between different platforms as the architecture, hardware, and software evolves. A Java implementation of a high-level application framework, called Janus, is presented here. In this environment, developers create Java classes that describe the structural behavior of an application. The framework allows hardware and software modules to be freely mixed and interchanged. A compilation phase of the development process analyzes the structure of the application and adapts it to the target platform. Janus is capable of structuring the run-time behavior of an application to take advantage of the memory and computational resources available.

Multiscale Characterization of Nickel Titanium Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Gall, Keith

Shape memory alloys were characterized by a variety of methods to investigate the relationship between microstructural phase transformation, macroscale deformation due to mechanical loading, material geometry, and initial material state. The major portion of the work is application of digital image correlation at several length scales to SMAs under mechanical loading. In addition, the connection between electrical resistance, stress, and strain was studied in NiTi wires. Finally, a new processing method was investigated to develop porous NiTi samples, which can be examined under DIC in future work. The phase transformation temperatures of a Nickel-Titanium based shape memory alloy (SMA) were initially evaluated under stress-free conditions by the differential scanning calorimetric (DSC) technique. Results show that the phase transformation temperature is significantly higher for transition from de-twinned martensite to austenite than from twinned martensite or R phase to austenite. To further examine transformation temperatures as a function of initial state a tensile test apparatus with in-situ electrical resistance (ER) measurements was used to evaluate the transformation properties of SMAs at a variety of stress levels and initial compositions. The results show that stress has a significant influence on the transformation of detwinned martensite, but a small influence on R phase and twinned martensite transformations. Electrical resistance changes linearly with strain during the transformations from both kinds of martensite to austenite. The linearity between ER and strain during the transformation from de-twinned martensite to austenite is not affected by the stress, facilitating application to control algorithms. A revised phase diagram is drawn to express these results. To better understand the nature of the local and global strain fields that accompany phase transformation in shape memory alloys (SMAs), here we use high resolution imaging together with image correlation processing at several length scales. The Digital Image Correlation (DIC) method uses digital images captured during material deformation to generate displacement and strain field maps of the specimen surface. Both 5x optical magnification and low magnification provide details of localized strain behavior during the stress induced phase transformation in polycrystalline Nickel-Titanium SMA samples. Tension bars with (and without) machined geometric defects are tested with (and without) paint speckle pattern to investigate the response near pore-like defects. Results from the standard tensile bars (no defect) show a recoverable transformation propagate across the sample (from both ends towards center) that is observed as localization in the DIC calculated strain field. Biaxial strain measurements from the DIC method also provide data to calculate a Poisson Ratio as a function of transformation progress. Specimens with a circular (0.5 mm dia) defect exhibit similar strain-localization behaviors, but the stress concentration causes early material transformation near the defect. Analysis of the magnified images illustrates strain field localization due to the underlying polycrystalline microstructure of the NiTi specimen. Last, a study presents the development of new processing techniques for porous SMA materials. Porous SMAs are potential candidates in a variety of applications where micro-macrochannels might improve thermal response of mechanical actuators or promote bone ingrowth for biomedical implant devices. Recent methods in powder metallurgy have shown that adding small amounts of Niobium improves densification of sintered NiTi alloys. New results here show how porous NiTiNb microstructures are processed using temporary steel wire space holder. The wires (or layered 2-D meshes) are electrochemically dissolved to leave a complex network of pores throughout a dense NiTiNb alloy. The processing method presented here allows better control of pore geometry and arrangement when compared to existing techniques in NiTiNb powder metallurgy.

Properties of TiNi intermetallic compound industrially produced by combustion synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaieda, Yoshinari

Most TiNi shape memory intermetallic compounds are conventionally produced by the process including high frequency induction vacuum melting and casting. A gravity segregation occurs in a cast TiNi ingot because of the big difference in the specific gravity between Ti and Ni. It is difficult to control accurately the phase transformation temperature of TiNi shape memory intermetallic compound produced by the conventional process, because the martensitic transformation temperature shifts by 10K due to the change in 0.1 % of Ni content. Homogeneous TiNi intermetallic compound is produced by the industrial process including combustion synthesis method, which is a newly developedmore » manufacturing process. In the new process, phase transformation temperatures of TiNi can be controlled accurately by controlling the ratio of Ti and Ni elemental starting powders. The chemical component, the impurities and the phase transformation temperatures of the TiNi products industrially produced by the process are revealed. These properties are vitally important when combustion synthesis method is applied to an industrial mass production process for producing TiNi shape memory intermetallic compounds. TiNi shape memory products are industrially and commercially produced today the industrial process including combustion synthesis. The total production weight in a year is 30 tins in 1994.« less

A brain-computer interface based cognitive training system for healthy elderly: a randomized control pilot study for usability and preliminary efficacy.

PubMed

Lee, Tih-Shih; Goh, Siau Juinn Alexa; Quek, Shin Yi; Phillips, Rachel; Guan, Cuntai; Cheung, Yin Bun; Feng, Lei; Teng, Stephanie Sze Wei; Wang, Chuan Chu; Chin, Zheng Yang; Zhang, Haihong; Ng, Tze Pin; Lee, Jimmy; Keefe, Richard; Krishnan, K Ranga Rama

2013-01-01

Cognitive decline in aging is a pressing issue associated with significant healthcare costs and deterioration in quality of life. Previously, we reported the successful use of a novel brain-computer interface (BCI) training system in improving symptoms of attention deficit hyperactivity disorder. Here, we examine the feasibility of the BCI system with a new game that incorporates memory training in improving memory and attention in a pilot sample of healthy elderly. This study investigates the safety, usability and acceptability of our BCI system to elderly, and obtains an efficacy estimate to warrant a phase III trial. Thirty-one healthy elderly were randomized into intervention (n = 15) and waitlist control arms (n = 16). Intervention consisted of an 8-week training comprising 24 half-hour sessions. A usability and acceptability questionnaire was administered at the end of training. Safety was investigated by querying users about adverse events after every session. Efficacy of the system was measured by the change of total score from the Repeatable Battery for the Assessment of Neuropsychological Status (RBANS) before and after training. Feedback on the usability and acceptability questionnaire was positive. No adverse events were reported for all participants across all sessions. Though the median difference in the RBANS change scores between arms was not statistically significant, an effect size of 0.6SD was obtained, which reflects potential clinical utility according to Simon's randomized phase II trial design. Pooled data from both arms also showed that the median change in total scores pre and post-training was statistically significant (Mdn = 4.0; p<0.001). Specifically, there were significant improvements in immediate memory (p = 0.038), visuospatial/constructional (p = 0.014), attention (p = 0.039), and delayed memory (p<0.001) scores. Our BCI-based system shows promise in improving memory and attention in healthy elderly, and appears to be safe, user-friendly and acceptable to senior users. Given the efficacy signal, a phase III trial is warranted. ClinicalTrials.gov NCT01661894.

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae

PubMed Central

Ding, Keyuan; Rao, Feng; Lv, Shilong; Cheng, Yan; Wu, Liangcai; Song, Zhitang

2016-01-01

Increasing SET operation speed and reducing RESET operation energy have always been the innovation direction of phase change memory (PCM) technology. Here, we demonstrate that ∼87% and ∼42% reductions of RESET operation energy can be achieved on PCM cell based on stoichiometric Ti1Sb2Te5 alloy, compared with Ge2Sb2Te5 and non-stoichiometric Ti0.4Sb2Te3 based PCM cells at the same size, respectively. The Ti1Sb2Te5 based PCM cell also shows one order of magnitude faster SET operation speed compared to that of the Ge2Sb2Te5 based one. The enhancements may be caused by substantially increased concentration of TiTe2 nano-lamellae in crystalline Ti1Sb2Te5 phase. The highly electrical conduction and lowly thermal dissipation of the TiTe2 nano-lamellae play a major role in enhancing the thermal efficiency of the amorphization, prompting the low-energy RESET operation. Our work may inspire the interests to more thorough understanding and tailoring of the nature of the (TiTe2)n(Sb2Te3)m pseudobinary system which will be advantageous to realize high-speed and low-energy PCM applications. PMID:27469931

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae.

PubMed

Ding, Keyuan; Rao, Feng; Lv, Shilong; Cheng, Yan; Wu, Liangcai; Song, Zhitang

2016-07-29

Increasing SET operation speed and reducing RESET operation energy have always been the innovation direction of phase change memory (PCM) technology. Here, we demonstrate that ∼87% and ∼42% reductions of RESET operation energy can be achieved on PCM cell based on stoichiometric Ti1Sb2Te5 alloy, compared with Ge2Sb2Te5 and non-stoichiometric Ti0.4Sb2Te3 based PCM cells at the same size, respectively. The Ti1Sb2Te5 based PCM cell also shows one order of magnitude faster SET operation speed compared to that of the Ge2Sb2Te5 based one. The enhancements may be caused by substantially increased concentration of TiTe2 nano-lamellae in crystalline Ti1Sb2Te5 phase. The highly electrical conduction and lowly thermal dissipation of the TiTe2 nano-lamellae play a major role in enhancing the thermal efficiency of the amorphization, prompting the low-energy RESET operation. Our work may inspire the interests to more thorough understanding and tailoring of the nature of the (TiTe2)n(Sb2Te3)m pseudobinary system which will be advantageous to realize high-speed and low-energy PCM applications.

Impairment of working memory maintenance and response in schizophrenia: functional magnetic resonance imaging evidence.

PubMed

Driesen, Naomi R; Leung, Hoi-Chung; Calhoun, Vincent D; Constable, R Todd; Gueorguieva, Ralitza; Hoffman, Ralph; Skudlarski, Pawel; Goldman-Rakic, Patricia S; Krystal, John H

2008-12-15

Comparing prefrontal cortical activity during particular phases of working memory in healthy subjects and individuals diagnosed with schizophrenia might help to define the phase-specific deficits in cortical function that contribute to cognitive impairments associated with schizophrenia. This study featured a spatial working memory task, similar to that used in nonhuman primates, that was designed to facilitate separating brain activation into encoding, maintenance, and response phases. Fourteen patients with schizophrenia (4 medication-free) and 12 healthy comparison participants completed functional magnetic resonance imaging while performing a spatial working memory task with two levels of memory load. Task accuracy was similar in patients and healthy participants. However, patients showed reductions in brain activation during maintenance and response phases but not during the encoding phase. The reduced prefrontal activity during the maintenance phase of working memory was attributed to a greater rate of decay of prefrontal activity over time in patients. Cortical deficits in patients did not appear to be related to antipsychotic treatment. In patients and in healthy subjects, the time-dependent reduction in prefrontal activity during working memory maintenance correlated with poorer performance on the memory task. Overall, these data highlight that basic research insights into the distinct neurobiologies of the maintenance and response phases of working memory are of potential importance for understanding the neurobiology of cognitive impairment in schizophrenia and advancing its treatment.

Variable-Resistivity Material For Memory Circuits

NASA Technical Reports Server (NTRS)

Nagasubramanian, Ganesan; Distefano, Salvador; Moacanin, Jovan

1989-01-01

Nonvolatile memory elements packed densely. Electrically-erasable, programmable, read-only memory matrices made with newly-synthesized organic material of variable electrical resistivity. Material, polypyrrole doped with tetracyanoquinhydrone (TCNQ), changes reversibly between insulating or higher-resistivity state and conducting or low-resistivity state. Thin film of conductive polymer separates layer of row conductors from layer of column conductors. Resistivity of film at each intersection and, therefore, resistance of memory element defined by row and column, increased or decreased by application of suitable switching voltage. Matrix circuits made with this material useful for experiments in associative electronic memories based on models of neural networks.

Inter-individual Differences in Exercise-Induced Spatial Working Memory Improvement: A Near-Infrared Spectroscopy Study.

PubMed

Yamazaki, Yudai; Sato, Daisuke; Yamashiro, Koya; Tsubaki, Atsuhiro; Yamaguchi, Yui; Takehara, Nana; Maruyama, Atsuo

2017-01-01

Acute aerobic exercise at a mild intensity improves cognitive function. However, the response to exercise exhibits inter-individual differences, and the mechanisms underlying these differences remain unclear. The objective of this study was to determine potential factors in the brain that underlie differential responses to exercise in terms of cognitive improvement using functional near-infrared spectroscopy. Fourteen healthy subjects participated in these experiments. Participants performed a low intensity cycling exercise at 30% maximal oxygen uptake (VO 2peak ) for 10 min and performed a spatial memory task before and after exercising (5 and 30 min). The spatial memory task comprised two levels of difficulty (low: 1-dot EXERCISE, high: 3-dot EXERCISE). Cortical oxy-hemoglobin (O 2 Hb) levels were recorded using near-infrared spectroscopy during both the exercise and the spatial memory task phases. Regions of interests included the dorsolateral prefrontal cortex (DLPFC), ventrolateral prefrontal cortex (VLPFC), and frontopolar area (FPA). The participants were divided into two groups depending on whether they were responders (improved task reaction time) or non-responders (no improvement). Subsequently, we analyzed the group characteristics and differences in the change in O 2 Hb levels during exercise and spatial working memory tasks. Acute mild exercise significantly improved mean reaction times in the 1-dot memory task but not in the 3-dot task across the participants. In the 1-dot EXERCISE, 10 subjects were responders and four subjects were non-responders, whereas in the 3-dot EXERCISE, seven subjects were non-responders. In responders, during exercise, we found higher O 2 Hb levels in the right VLPFC response for the 1-dot memory task. Acute mild exercise caused inter-individual differences in spatial memory improvement, which were associated with changes in O 2 Hb activity in the prefrontal area during the exercise phase but not during the actual spatial memory task. Therefore, individuals who respond with higher reactivity to mild intensity exercise in the VLPFC might obtain larger spatial working memory improvements following exercise than non-responders.

Impact of asymmetric martensite and austenite nucleation and growth behavior on the phase stability and hysteresis of freestanding shape-memory nanoparticles

NASA Astrophysics Data System (ADS)

Ko, Won-Seok; Grabowski, Blazej; Neugebauer, Jörg

2018-03-01

Martensitic transformations in nanoscaled shape-memory alloys exhibit characteristic features absent for the bulk counterparts. Detailed understanding is required for applications in micro- and nanoelectromechanical systems, and experimental limitations render atomistic simulation an important complementary approach. Using a recently developed, accurate potential we investigate the phase transformation in freestanding Ni-Ti shape-memory nanoparticles with molecular-dynamics simulations. The results confirm that the decrease in the transformation temperature with decreasing particle size is correlated with an overstabilization of the austenitic surface energy over the martensitic surface energy. However, a detailed atomistic analysis of the nucleation and growth behavior reveals an unexpected difference in the mechanisms determining the austenite finish and martensite start temperature. While the austenite finish temperature is directly affected by a contribution of the surface energy difference, the martensite start temperature is mostly affected by the transformation strain, contrary to general expectations. This insight not only explains the reduced transformation temperature but also the reduced thermal hysteresis in freestanding nanoparticles.

Prefrontal electroencephalographic activity during the working memory processes involved in a sexually motivated task in male rats.

PubMed

Hernández-González, Marisela; Almanza-Sepúlveda, Mayra Linné; Olvera-Cortés, María Esther; Gutiérrez-Guzmán, Blanca Erika; Guevara, Miguel Angel

2012-08-01

The prefrontal cortex is involved in working memory functions, and several studies using food or drink as rewards have demonstrated that the rat is capable of performing tasks that involve working memory. Sexual activity is another highly-rewarding, motivated behaviour that has proven to be an efficient incentive in classical operant tasks. The objective of this study was to determine whether the functional activity of the medial prefrontal cortex (mPFC) changes in relation to the working memory processes involved in a sexually motivated task performed in male rats. Thus, male Wistar rats implanted in the mPFC were subjected to a nonmatching-to-sample task in a T-maze using sexual interaction as a reinforcer during a 4-day training period. On the basis of their performance during training, the rats were classified as 'good-learners' or 'bad-learners'. Only the good-learner rats showed an increase in the absolute power of the 8-13 Hz band during both the sample and test runs; a finding that could be related to learning of the working memory elements entailed in the task. During the maintenance phase only (i.e., once the rule had been learned well), the good-learner rats also showed an increased correlation of the 8-13 Hz band during the sample run, indicating that a high degree of coupling between the prefrontal cortices is necessary for the processing required to allow the rats to make correct decisions in the maintenance phase. Taken together, these data show that mPFC activity changes in relation to the working memory processes involved in a sexually motivated task in male rats.

Three-dimensional image display system using stereogram and holographic optical memory techniques

NASA Astrophysics Data System (ADS)

Kim, Cheol S.; Kim, Jung G.; Shin, Chang-Mok; Kim, Soo-Joong

2001-09-01

In this paper, we implemented a three dimensional image display system using stereogram and holographic optical memory techniques which can store many images and reconstruct them automatically. In this system, to store and reconstruct stereo images, incident angle of reference beam must be controlled in real time, so we used BPH (binary phase hologram) and LCD (liquid crystal display) for controlling reference beam. And input images are represented on the LCD without polarizer/analyzer for maintaining uniform beam intensities regardless of the brightness of input images. The input images and BPHs are edited using application software with having the same recording scheduled time interval in storing. The reconstructed stereo images are acquired by capturing the output images with CCD camera at the behind of the analyzer which transforms phase information into brightness information of images. The reference beams are acquired by Fourier transform of BPH which designed with SA (simulated annealing) algorithm, and represented on the LCD with the 0.05 seconds time interval using application software for reconstructing the stereo images. In output plane, we used a LCD shutter that is synchronized to a monitor that displays alternate left and right eye images for depth perception. We demonstrated optical experiment which store and reconstruct four stereo images in BaTiO3 repeatedly using holographic optical memory techniques.

Experimental evidence of stress-field-induced selection of variants in Ni-Mn-Ga ferromagnetic shape-memory alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y. D.; Key Laboratory for Anisotropy and Texture of Materials; Brown, D. W.

2007-05-01

The in situ time-of-flight neutron-diffraction measurements captured well the martensitic transformation behavior of the Ni-Mn-Ga ferromagnetic shape-memory alloys under uniaxial stress fields. We found that a small uniaxial stress applied during phase transformation dramatically disturbed the distribution of variants in the product phase. The observed changes in the distributions of variants may be explained by considering the role of the minimum distortion energy of the Bain transformation in the effective partition among the variants belonging to the same orientation of parent phase. It was also found that transformation kinetics under various stress fields follows the scale law. The present investigationsmore » provide the fundamental approach for scaling the evolution of microstructures in martensitic transitions, which is of general interest to the condensed matter community.« less

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter.

PubMed

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-03-09

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics.

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter

PubMed Central

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-01-01

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics. PMID:28276500

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter

NASA Astrophysics Data System (ADS)

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-03-01

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics.

Sleep supports cued fear extinction memory consolidation independent of circadian phase.

PubMed

Melo, Irene; Ehrlich, Ingrid

2016-07-01

Sleep promotes memory, particularly for declarative learning. However, its role in non-declarative, emotional memories is less well understood. Some studies suggest that sleep may influence fear-related memories, and thus may be an important factor determining the outcome of treatments for emotional disorders such as post-traumatic stress disorder. Here, we investigated the effect of sleep deprivation and time of day on fear extinction memory consolidation. Mice were subjected to a cued Pavlovian fear and extinction paradigm at the beginning of their resting or active phase. Immediate post-extinction learning sleep deprivation for 5h compromised extinction memory when tested 24h after learning. Context-dependent extinction memory recall was completely prevented by sleep-manipulation during the resting phase, while impairment was milder during the active phase and extinction memory retained its context-specificity. Importantly, control experiments excluded confounding factors such as differences in baseline locomotion, fear generalization and stress hormone levels. Together, our findings indicate that post-learning sleep supports cued fear extinction memory consolidation in both circadian phases. The lack of correlation between memory efficacy and sleep time suggests that extinction memory may be influenced by specific sleep events in the early consolidation period. Copyright © 2016 Elsevier Inc. All rights reserved.

An Attempt at Blocking of Position Learning by Training with Reward-Memory Associations

ERIC Educational Resources Information Center

Burns, Richard A.; Johnson, Kendra S.

2006-01-01

Rats were runway trained with sequences of rewards that changed in 3 phases. In Phase 1 (24 days), the sequences were NP', SNP', and P'SNP' (n = 3), or NS', PNS', and S'PNS', where P and P' refer to 4 and 8 plain Noyes pellets, and S and S' are 4 and 8 sucrose pellets. N was a 30-s confinement in the goal without reward. In Phase 2 (14 days) the…

Functional and evolutionary trade-offs co-occur between two consolidated memory phases in Drosophila melanogaster

PubMed Central

Lagasse, Fabrice; Moreno, Celine; Preat, Thomas; Mery, Frederic

2012-01-01

Memory is a complex and dynamic process that is composed of different phases. Its evolution under natural selection probably depends on a balance between fitness benefits and costs. In Drosophila, two separate forms of consolidated memory phases can be generated experimentally: anaesthesia-resistant memory (ARM) and long-term memory (LTM). In recent years, several studies have focused on the differences between these long-lasting memory types and have found that, at the functional level, ARM and LTM are antagonistic. How this functional relationship will affect their evolutionary dynamics remains unknown. We selected for flies with either improved ARM or improved LTM over several generations, and found that flies selected specifically for improvement of one consolidated memory phase show reduced performance in the other memory phase. We also found that improved LTM was linked to decreased longevity in male flies but not in females. Conversely, males with improved ARM had increased longevity. We found no correlation between either improved ARM or LTM and other phenotypic traits. This is, to our knowledge, the first evidence of a symmetrical evolutionary trade-off between two memory phases for the same learning task. Such trade-offs may have an important impact on the evolution of cognitive capacities. On a neural level, these results support the hypothesis that mechanisms underlying these forms of consolidated memory are, to some degree, antagonistic. PMID:22859595

The Effect of Consistency on Short-Term Memory for Scenes.

PubMed

Gong, Mingliang; Xuan, Yuming; Xu, Xinwen; Fu, Xiaolan

2017-01-01

Which is more detectable, the change of a consistent or an inconsistent object in a scene? This question has been debated for decades. We noted that the change of objects in scenes might simultaneously be accompanied with gist changes. In the present study we aimed to examine how the alteration of gist, as well as the consistency of the changed objects, modulated change detection. In Experiment 1, we manipulated the semantic content by either keeping or changing the consistency of the scene. Results showed that the changes of consistent and inconsistent scenes were equally detected. More importantly, the changes were more accurately detected when scene consistency changed than when the consistency remained unchanged, regardless of the consistency of the memory scenes. A phase-scrambled version of stimuli was adopted in Experiment 2 to decouple the possible confounding effect of low-level factors. The results of Experiment 2 demonstrated that the effect found in Experiment 1 was indeed due to the change of high-level semantic consistency rather than the change of low-level physical features. Together, the study suggests that the change of consistency plays an important role in scene short-term memory, which might be attributed to the sensitivity to the change of semantic content.

The Effect of Consistency on Short-Term Memory for Scenes

PubMed Central

Gong, Mingliang; Xuan, Yuming; Xu, Xinwen; Fu, Xiaolan

2017-01-01

Which is more detectable, the change of a consistent or an inconsistent object in a scene? This question has been debated for decades. We noted that the change of objects in scenes might simultaneously be accompanied with gist changes. In the present study we aimed to examine how the alteration of gist, as well as the consistency of the changed objects, modulated change detection. In Experiment 1, we manipulated the semantic content by either keeping or changing the consistency of the scene. Results showed that the changes of consistent and inconsistent scenes were equally detected. More importantly, the changes were more accurately detected when scene consistency changed than when the consistency remained unchanged, regardless of the consistency of the memory scenes. A phase-scrambled version of stimuli was adopted in Experiment 2 to decouple the possible confounding effect of low-level factors. The results of Experiment 2 demonstrated that the effect found in Experiment 1 was indeed due to the change of high-level semantic consistency rather than the change of low-level physical features. Together, the study suggests that the change of consistency plays an important role in scene short-term memory, which might be attributed to the sensitivity to the change of semantic content. PMID:29046654

Mild traumatic brain injury: graph-model characterization of brain networks for episodic memory.

PubMed

Tsirka, Vasso; Simos, Panagiotis G; Vakis, Antonios; Kanatsouli, Kassiani; Vourkas, Michael; Erimaki, Sofia; Pachou, Ellie; Stam, Cornelis Jan; Micheloyannis, Sifis

2011-02-01

Episodic memory is among the cognitive functions that can be affected in the acute phase following mild traumatic brain injury (MTBI). The present study used EEG recordings to evaluate global synchronization and network organization of rhythmic activity during the encoding and recognition phases of an episodic memory task varying in stimulus type (kaleidoscope images, pictures, words, and pseudowords). Synchronization of oscillatory activity was assessed using a linear and nonlinear connectivity estimator and network analyses were performed using algorithms derived from graph theory. Twenty five MTBI patients (tested within days post-injury) and healthy volunteers were closely matched on demographic variables, verbal ability, psychological status variables, as well as on overall task performance. Patients demonstrated sub-optimal network organization, as reflected by changes in graph parameters in the theta and alpha bands during both encoding and recognition. There were no group differences in spectral energy during task performance or on network parameters during a control condition (rest). Evidence of less optimally organized functional networks during memory tasks was more prominent for pictorial than for verbal stimuli. Copyright © 2010 Elsevier B.V. All rights reserved.

Mind bomb-1 is an essential modulator of long-term memory and synaptic plasticity via the Notch signaling pathway

PubMed Central

2012-01-01

Background Notch signaling is well recognized as a key regulator of the neuronal fate during embryonic development, but its function in the adult brain is still largely unknown. Mind bomb-1 (Mib1) is an essential positive regulator in the Notch pathway, acting non-autonomously in the signal-sending cells. Therefore, genetic ablation of Mib1 in mature neuron would give valuable insight to understand the cell-to-cell interaction between neurons via Notch signaling for their proper function. Results Here we show that the inactivation of Mib1 in mature neurons in forebrain results in impaired hippocampal dependent spatial memory and contextual fear memory. Consistently, hippocampal slices from Mib1-deficient mice show impaired late-phase, but not early-phase, long-term potentiation and long-term depression without change in basal synaptic transmission at SC-CA1 synapses. Conclusions These data suggest that Mib1-mediated Notch signaling is essential for long-lasting synaptic plasticity and memory formation in the rodent hippocampus. PMID:23111145

Method of preparing a two-way shape memory alloy

DOEpatents

Johnson, A.D.

1984-03-06

A two-way shape memory alloy, a method of training a shape memory alloy, and a heat engine employing the two-way shape memory alloy to do external work during both heating and cooling phases are disclosed. The alloy is heated under a first training stress to a temperature which is above the upper operating temperature of the alloy, then cooled to a cold temperature below the zero-force transition temperature of the alloy, then deformed while applying a second training stress which is greater in magnitude than the stress at which the alloy is to be operated, then heated back to the hot temperature, changing from the second training stress back to the first training stress. 8 figs.

Structural health monitoring for DOT using magnetic shape memory alloy cables in concrete

NASA Astrophysics Data System (ADS)

Davis, Allen; Mirsayar, Mirmilad; Sheahan, Emery; Hartl, Darren

2018-03-01

Embedding shape memory alloy (SMA) wires in concrete components offers the potential to monitor their structural health via external magnetic field sensing. Currently, structural health monitoring (SHM) is dominated by acoustic emission and vibration-based methods. Thus, it is attractive to pursue alternative damage sensing techniques that may lower the cost or increase the accuracy of SHM. In this work, SHM via magnetic field detection applied to embedded magnetic shape memory alloy (MSMA) is demonstrated both experimentally and using computational models. A concrete beam containing iron-based MSMA wire is subjected to a 3-point bend test where structural damage is induced, thereby resulting in a localized phase change of the MSMA wire. Magnetic field lines passing through the embedded MSMA domain are altered by this phase change and can thus be used to detect damage within the structure. A good correlation is observed between the computational and experimental results. Additionally, the implementation of stranded MSMA cables in place of the MSMA wire is assessed through similar computational models. The combination of these computational models and their subsequent experimental validation provide sufficient support for the feasibility of SHM using magnetic field sensing via MSMA embedded components.

Sleep-Dependent Oscillatory Synchronization: A Role in Fear Memory Consolidation.

PubMed

Totty, Michael S; Chesney, Logan A; Geist, Phillip A; Datta, Subimal

2017-01-01

Sleep plays an important role in memory consolidation through the facilitation of neuronal plasticity; however, how sleep accomplishes this remains to be completely understood. It has previously been demonstrated that neural oscillations are an intrinsic mechanism by which the brain precisely controls neural ensembles. Inter-regional synchronization of these oscillations is also known to facilitate long-range communication and long-term potentiation (LTP). In the present study, we investigated how the characteristic rhythms found in local field potentials (LFPs) during non-REM and REM sleep play a role in emotional memory consolidation. Chronically implanted bipolar electrodes in the lateral amygdala (LA), dorsal and ventral hippocampus (DH, VH), and the infra-limbic (IL), and pre-limbic (PL) prefrontal cortex were used to record LFPs across sleep-wake activity following each day of a Pavlovian cued fear conditioning paradigm. This resulted in three principle findings: (1) theta rhythms during REM sleep are highly synchronized between regions; (2) the extent of inter-regional synchronization during REM and non-REM sleep is altered by FC and EX; (3) the mean phase difference of synchronization between the LA and VH during REM sleep predicts changes in freezing after cued fear extinction. These results both oppose a currently proposed model of sleep-dependent memory consolidation and provide a novel finding which suggests that the role of REM sleep theta rhythms in memory consolidation may rely more on the relative phase-shift between neural oscillations, rather than the extent of phase synchronization.

Dynamic reconfiguration of human brain functional networks through neurofeedback.

PubMed

Haller, Sven; Kopel, Rotem; Jhooti, Permi; Haas, Tanja; Scharnowski, Frank; Lovblad, Karl-Olof; Scheffler, Klaus; Van De Ville, Dimitri

2013-11-01

Recent fMRI studies demonstrated that functional connectivity is altered following cognitive tasks (e.g., learning) or due to various neurological disorders. We tested whether real-time fMRI-based neurofeedback can be a tool to voluntarily reconfigure brain network interactions. To disentangle learning-related from regulation-related effects, we first trained participants to voluntarily regulate activity in the auditory cortex (training phase) and subsequently asked participants to exert learned voluntary self-regulation in the absence of feedback (transfer phase without learning). Using independent component analysis (ICA), we found network reconfigurations (increases in functional network connectivity) during the neurofeedback training phase between the auditory target region and (1) the auditory pathway; (2) visual regions related to visual feedback processing; (3) insula related to introspection and self-regulation and (4) working memory and high-level visual attention areas related to cognitive effort. Interestingly, the auditory target region was identified as the hub of the reconfigured functional networks without a-priori assumptions. During the transfer phase, we again found specific functional connectivity reconfiguration between auditory and attention network confirming the specific effect of self-regulation on functional connectivity. Functional connectivity to working memory related networks was no longer altered consistent with the absent demand on working memory. We demonstrate that neurofeedback learning is mediated by widespread changes in functional connectivity. In contrast, applying learned self-regulation involves more limited and specific network changes in an auditory setup intended as a model for tinnitus. Hence, neurofeedback training might be used to promote recovery from neurological disorders that are linked to abnormal patterns of brain connectivity. Copyright © 2013 Elsevier Inc. All rights reserved.

Review of Random Phase Encoding in Volume Holographic Storage

PubMed Central

Su, Wei-Chia; Sun, Ching-Cherng

2012-01-01

Random phase encoding is a unique technique for volume hologram which can be applied to various applications such as holographic multiplexing storage, image encryption, and optical sensing. In this review article, we first review and discuss diffraction selectivity of random phase encoding in volume holograms, which is the most important parameter related to multiplexing capacity of volume holographic storage. We then review an image encryption system based on random phase encoding. The alignment of phase key for decryption of the encoded image stored in holographic memory is analyzed and discussed. In the latter part of the review, an all-optical sensing system implemented by random phase encoding and holographic interconnection is presented.

Creation of long-term coherent optical memory via controlled nonlinear interactions in Bose-Einstein condensates.

PubMed

Zhang, Rui; Garner, Sean R; Hau, Lene Vestergaard

2009-12-04

A Bose-Einstein condensate confined in an optical dipole trap is used to generate long-term coherent memory for light, and storage times of more than 1 s are observed. Phase coherence of the condensate as well as controlled manipulations of elastic and inelastic atomic scattering processes are utilized to increase the storage fidelity by several orders of magnitude over previous schemes. The results have important applications for creation of long-distance quantum networks and for generation of entangled states of light and matter.

A new scheduling algorithm for parallel sparse LU factorization with static pivoting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigori, Laura; Li, Xiaoye S.

2002-08-20

In this paper we present a static scheduling algorithm for parallel sparse LU factorization with static pivoting. The algorithm is divided into mapping and scheduling phases, using the symmetric pruned graphs of L' and U to represent dependencies. The scheduling algorithm is designed for driving the parallel execution of the factorization on a distributed-memory architecture. Experimental results and comparisons with SuperLU{_}DIST are reported after applying this algorithm on real world application matrices on an IBM SP RS/6000 distributed memory machine.

Digital correlation detector for low-cost Omega navigation

NASA Technical Reports Server (NTRS)

Chamberlin, K. A.

1976-01-01

Techniques to lower the cost of using the Omega global navigation network with phase-locked loops (PLL) were developed. The technique that was accepted as being "optimal" is called the memory-aided phase-locked loop (MAPLL) since it allows operation on all eight Omega time slots with one PLL through the implementation of a random access memory. The receiver front-end and the signals that it transmits to the PLL were first described. A brief statistical analysis of these signals was then made to allow a rough comparison between the front-end presented in this work and a commercially available front-end to be made. The hardware and theory of application of the MAPLL were described, ending with an analysis of data taken with the MAPLL. Some conclusions and recommendations were also given.

Novelty-Sensitive Dopaminergic Neurons in the Human Substantia Nigra Predict Success of Declarative Memory Formation.

PubMed

Kamiński, Jan; Mamelak, Adam N; Birch, Kurtis; Mosher, Clayton P; Tagliati, Michele; Rutishauser, Ueli

2018-05-07

The encoding of information into long-term declarative memory is facilitated by dopamine. This process depends on hippocampal novelty signals, but it remains unknown how midbrain dopaminergic neurons are modulated by declarative-memory-based information. We recorded individual substantia nigra (SN) neurons and cortical field potentials in human patients performing a recognition memory task. We found that 25% of SN neurons were modulated by stimulus novelty. Extracellular waveform shape and anatomical location indicated that these memory-selective neurons were putatively dopaminergic. The responses of memory-selective neurons appeared 527 ms after stimulus onset, changed after a single trial, and were indicative of recognition accuracy. SN neurons phase locked to frontal cortical theta-frequency oscillations, and the extent of this coordination predicted successful memory formation. These data reveal that dopaminergic neurons in the human SN are modulated by memory signals and demonstrate a progression of information flow in the hippocampal-basal ganglia-frontal cortex loop for memory encoding. Copyright © 2018 The Author(s). Published by Elsevier Ltd.. All rights reserved.

Femtosecond laser pulse induced phase transition of Cr-doped Sb2Te1 films studied with a pump-probe system

NASA Astrophysics Data System (ADS)

Jiang, Minghui; Wang, Qing; Lei, Kai; Wang, Yang; Liu, Bo; Song, Zhitang

2016-10-01

The Femtosecond laser pulse induced phase transition dynamics of Cr-doped Sb2Te1 films was studied by real-time reflectivity measurements with a pump-probe system. It was found that crystallization of the as-deposited CrxSb2Te1 phase-change thin films exhibits a multi-stage process lasting for about 40ns.The time required for the multi-stage process seems to be not related to the contents of Cr element. The durations of the crystallization and amorphization processes are approximately the same. Doping Cr into Sb2Te1 thin film can improve its photo-thermal stability without obvious change in the crystallization rate. Optical images and image intensity cross sections are used to visualize the transformed regions. This work may provide further insight into the phase-change mechanism of CrxSb2Te1 under extra-non-equilibrium conditions and aid to develop new ultrafast phase-change memory materials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gargarella, P., E-mail: piter@ufscar.br; Departamento de Engenharia de Materiais, Universidade Federal de São Carlos, Rodovia Washington Luiz, Km 235, 13565-905 São Carlos, São Paulo; Pauly, S.

The structural evolution of Ti{sub 50}Cu{sub 43}Ni{sub 7} and Ti{sub 55}Cu{sub 35}Ni{sub 10} metallic glasses during heating was investigated by in-situ synchrotron X-ray diffraction. The width of the most intense diffraction maximum of the glassy phase decreases slightly during relaxation below the glass transition temperature. Significant structural changes only occur above the glass transition manifesting in a change in the respective peak positions. At even higher temperatures, nanocrystals of the shape memory B2-Ti(Cu,Ni) phase precipitate, and their small size hampers the occurrence of a martensitic transformation.

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

NASA Technical Reports Server (NTRS)

Rao, Vikram; Patel, Jagdish; Patel, Janak; Namkung, Jeffrey

2001-01-01

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Age Is Associated with Reduced Sharp-Wave Ripple Frequency and Altered Patterns of Neuronal Variability

PubMed Central

Wiegand, Jean-Paul L.; Gray, Daniel T.; Schimanski, Lesley A.; Lipa, Peter; Barnes, C. A.

2016-01-01

Spatial and episodic memory performance declines with age, and the neural basis for this decline is not well understood. Sharp-wave ripples are brief (∼70 ms) high-frequency oscillatory events generated in the hippocampus and are associated with the consolidation of spatial memories. Given the connection between ripple oscillations and memory consolidation, we investigated whether the structure of ripple oscillations and ripple-triggered patterns of single-unit activity are altered in aged rats. Local field and single-unit activity surrounding sharp-wave ripple events were examined in the CA1 region of the hippocampus of old (n = 5) and young (n = 6) F344 rats during periods of rest preceding and following performance on a place-dependent eyeblink-conditioning task. Neural responses in aged rats differed from responses in young rats in several ways. First, compared with young rats, the rate of ripple occurrence (ripple density) is reduced in aged rats during postbehavior rest. Second, mean ripple frequency during prebehavior and postbehavior rest is lower in aged animals (aged: 132 Hz; young: 146 Hz). Third, single neurons in aged animals responded more consistently from ripple to ripple. Fourth, variability in interspike intervals was greater in aged rats. Finally, neurons were tuned to a narrower range of phases of the ripple oscillation relative to young animals. Together, these results suggest that the CA1 network in aged animals has a reduced “vocabulary” of available representational states. SIGNIFICANCE STATEMENT The hippocampus is a structure that is critical for the formation of episodic memories. Sharp-wave ripple events generated in the hippocampus have been implicated in memory consolidation processes critical to memory stabilization. We examine here whether these ripple oscillations are altered over the course of the life span, which could contribute to hippocampus-dependent memory deficits that occur during aging. This experiment used young and aged memory-impaired rats to examine age-related changes in ripple architecture, ripple-triggered spike variance, and spike-phase coherence. We found that there are, indeed, significant changes in characteristics of ripples in older animals that could impact consolidation processes and memory stabilization in the aged brain. PMID:27194342

Geant4 Computing Performance Benchmarking and Monitoring

DOE PAGES

Dotti, Andrea; Elvira, V. Daniel; Folger, Gunter; ...

2015-12-23

Performance evaluation and analysis of large scale computing applications is essential for optimal use of resources. As detector simulation is one of the most compute intensive tasks and Geant4 is the simulation toolkit most widely used in contemporary high energy physics (HEP) experiments, it is important to monitor Geant4 through its development cycle for changes in computing performance and to identify problems and opportunities for code improvements. All Geant4 development and public releases are being profiled with a set of applications that utilize different input event samples, physics parameters, and detector configurations. Results from multiple benchmarking runs are compared tomore » previous public and development reference releases to monitor CPU and memory usage. Observed changes are evaluated and correlated with code modifications. Besides the full summary of call stack and memory footprint, a detailed call graph analysis is available to Geant4 developers for further analysis. The set of software tools used in the performance evaluation procedure, both in sequential and multi-threaded modes, include FAST, IgProf and Open|Speedshop. In conclusion, the scalability of the CPU time and memory performance in multi-threaded application is evaluated by measuring event throughput and memory gain as a function of the number of threads for selected event samples.« less

On the dynamic nature of the engram: evidence for circuit-level reorganization of object memory traces following reactivation.

PubMed

Winters, Boyer D; Tucci, Mark C; Jacklin, Derek L; Reid, James M; Newsome, James

2011-11-30

Research has implicated the perirhinal cortex (PRh) in several aspects of object recognition memory. The specific role of the hippocampus (HPC) remains controversial, but its involvement in object recognition may pertain to processing contextual information in relation to objects rather than object representation per se. Here we investigated the roles of the PRh and HPC in object memory reconsolidation using the spontaneous object recognition task for rats. Intra-PRh infusions of the protein synthesis inhibitor anisomycin immediately following memory reactivation prevented object memory reconsolidation. Similar deficits were observed when a novel object or a salient contextual change was introduced during the reactivation phase. Intra-HPC infusions of anisomycin, however, blocked object memory reconsolidation only when a contextual change was introduced during reactivation. Moreover, disrupting functional interaction between the HPC and PRh by infusing anisomycin unilaterally into each structure in opposite hemispheres also impaired reconsolidation when reactivation was done in an altered context. These results show for the first time that the PRh is critical for reconsolidation of object memory traces and provide insight into the dynamic process of object memory storage; the selective requirement for hippocampal involvement following reactivation in an altered context suggests a substantial circuit level object trace reorganization whereby an initially PRh-dependent object memory becomes reliant on both the HPC and PRh and their interaction. Such trace reorganization may play a central role in reconsolidation-mediated memory updating and could represent an important aspect of lingering consolidation processes proposed to underlie long-term memory modulation and stabilization.

Kinetic memory based on the enzyme-limited competition.

PubMed

Hatakeyama, Tetsuhiro S; Kaneko, Kunihiko

2014-08-01

Cellular memory, which allows cells to retain information from their environment, is important for a variety of cellular functions, such as adaptation to external stimuli, cell differentiation, and synaptic plasticity. Although posttranslational modifications have received much attention as a source of cellular memory, the mechanisms directing such alterations have not been fully uncovered. It may be possible to embed memory in multiple stable states in dynamical systems governing modifications. However, several experiments on modifications of proteins suggest long-term relaxation depending on experienced external conditions, without explicit switches over multi-stable states. As an alternative to a multistability memory scheme, we propose "kinetic memory" for epigenetic cellular memory, in which memory is stored as a slow-relaxation process far from a stable fixed state. Information from previous environmental exposure is retained as the long-term maintenance of a cellular state, rather than switches over fixed states. To demonstrate this kinetic memory, we study several models in which multimeric proteins undergo catalytic modifications (e.g., phosphorylation and methylation), and find that a slow relaxation process of the modification state, logarithmic in time, appears when the concentration of a catalyst (enzyme) involved in the modification reactions is lower than that of the substrates. Sharp transitions from a normal fast-relaxation phase into this slow-relaxation phase are revealed, and explained by enzyme-limited competition among modification reactions. The slow-relaxation process is confirmed by simulations of several models of catalytic reactions of protein modifications, and it enables the memorization of external stimuli, as its time course depends crucially on the history of the stimuli. This kinetic memory provides novel insight into a broad class of cellular memory and functions. In particular, applications for long-term potentiation are discussed, including dynamic modifications of calcium-calmodulin kinase II and cAMP-response element-binding protein essential for synaptic plasticity.

Visual Working Memory Load-Related Changes in Neural Activity and Functional Connectivity

PubMed Central

Li, Ling; Zhang, Jin-Xiang; Jiang, Tao

2011-01-01

Background Visual working memory (VWM) helps us store visual information to prepare for subsequent behavior. The neuronal mechanisms for sustaining coherent visual information and the mechanisms for limited VWM capacity have remained uncharacterized. Although numerous studies have utilized behavioral accuracy, neural activity, and connectivity to explore the mechanism of VWM retention, little is known about the load-related changes in functional connectivity for hemi-field VWM retention. Methodology/Principal Findings In this study, we recorded electroencephalography (EEG) from 14 normal young adults while they performed a bilateral visual field memory task. Subjects had more rapid and accurate responses to the left visual field (LVF) memory condition. The difference in mean amplitude between the ipsilateral and contralateral event-related potential (ERP) at parietal-occipital electrodes in retention interval period was obtained with six different memory loads. Functional connectivity between 128 scalp regions was measured by EEG phase synchronization in the theta- (4–8 Hz), alpha- (8–12 Hz), beta- (12–32 Hz), and gamma- (32–40 Hz) frequency bands. The resulting matrices were converted to graphs, and mean degree, clustering coefficient and shortest path length was computed as a function of memory load. The results showed that brain networks of theta-, alpha-, beta-, and gamma- frequency bands were load-dependent and visual-field dependent. The networks of theta- and alpha- bands phase synchrony were most predominant in retention period for right visual field (RVF) WM than for LVF WM. Furthermore, only for RVF memory condition, brain network density of theta-band during the retention interval were linked to the delay of behavior reaction time, and the topological property of alpha-band network was negative correlation with behavior accuracy. Conclusions/Significance We suggest that the differences in theta- and alpha- bands between LVF and RVF conditions in functional connectivity and topological properties during retention period may result in the decline of behavioral performance in RVF task. PMID:21789253

Motor skill learning and offline-changes in TGA patients with acute hippocampal CA1 lesions.

PubMed

Döhring, Juliane; Stoldt, Anne; Witt, Karsten; Schönfeld, Robby; Deuschl, Günther; Born, Jan; Bartsch, Thorsten

2017-04-01

Learning and the formation of memory are reflected in various memory systems in the human brain such as the hippocampus based declarative memory system and the striatum-cortex based system involved in motor sequence learning. It is a matter of debate how both memory systems interact in humans during learning and consolidation and how this interaction is influenced by sleep. We studied the effect of an acute dysfunction of hippocampal CA1 neurons on the acquisition (on-line condition) and off-line changes of a motor skill in patients with a transient global amnesia (TGA). Sixteen patients (68 ± 4.4 yrs) were studied in the acute phase and during follow-up using a declarative and procedural test, and were compared to controls. Acute TGA patients displayed profound deficits in all declarative memory functions. During the acute amnestic phase, patients were able to acquire the motor skill task reflected by increasing finger tapping speed across the on-line condition, albeit to a lesser degree than during follow-up or compared to controls. Retrieval two days later indicated a greater off-line gain in motor speed in patients than controls. Moreover, this gain in motor skill performance was negatively correlated to the declarative learning deficit. Our results suggest a differential interaction between procedural and declarative memory systems during acquisition and consolidation of motor sequences in older humans. During acquisition, hippocampal dysfunction attenuates fast learning and thus unmasks the slow and rigid learning curve of striatum-based procedural learning. The stronger gains in the post-consolidation condition in motor skill in CA1 lesioned patients indicate a facilitated consolidation process probably occurring during sleep, and suggest a competitive interaction between the memory systems. These findings might be a reflection of network reorganization and plasticity in older humans and in the presence of CA1 hippocampal pathology. Copyright © 2016 Elsevier Ltd. All rights reserved.

Review of radiation effects on ReRAM devices and technology

NASA Astrophysics Data System (ADS)

Gonzalez-Velo, Yago; Barnaby, Hugh J.; Kozicki, Michael N.

2017-08-01

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers’ interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Oscillatory mechanisms of process binding in memory.

PubMed

Klimesch, Wolfgang; Freunberger, Roman; Sauseng, Paul

2010-06-01

A central topic in cognitive neuroscience is the question, which processes underlie large scale communication within and between different neural networks. The basic assumption is that oscillatory phase synchronization plays an important role for process binding--the transient linking of different cognitive processes--which may be considered a special type of large scale communication. We investigate this question for memory processes on the basis of different types of oscillatory synchronization mechanisms. The reviewed findings suggest that theta and alpha phase coupling (and phase reorganization) reflect control processes in two large memory systems, a working memory and a complex knowledge system that comprises semantic long-term memory. It is suggested that alpha phase synchronization may be interpreted in terms of processes that coordinate top-down control (a process guided by expectancy to focus on relevant search areas) and access to memory traces (a process leading to the activation of a memory trace). An analogous interpretation is suggested for theta oscillations and the controlled access to episodic memories. Copyright (c) 2009 Elsevier Ltd. All rights reserved.

The default mode network and the working memory network are not anti-correlated during all phases of a working memory task.

PubMed

Piccoli, Tommaso; Valente, Giancarlo; Linden, David E J; Re, Marta; Esposito, Fabrizio; Sack, Alexander T; Di Salle, Francesco

2015-01-01

The default mode network and the working memory network are known to be anti-correlated during sustained cognitive processing, in a load-dependent manner. We hypothesized that functional connectivity among nodes of the two networks could be dynamically modulated by task phases across time. To address the dynamic links between default mode network and the working memory network, we used a delayed visuo-spatial working memory paradigm, which allowed us to separate three different phases of working memory (encoding, maintenance, and retrieval), and analyzed the functional connectivity during each phase within and between the default mode network and the working memory network networks. We found that the two networks are anti-correlated only during the maintenance phase of working memory, i.e. when attention is focused on a memorized stimulus in the absence of external input. Conversely, during the encoding and retrieval phases, when the external stimulation is present, the default mode network is positively coupled with the working memory network, suggesting the existence of a dynamically switching of functional connectivity between "task-positive" and "task-negative" brain networks. Our results demonstrate that the well-established dichotomy of the human brain (anti-correlated networks during rest and balanced activation-deactivation during cognition) has a more nuanced organization than previously thought and engages in different patterns of correlation and anti-correlation during specific sub-phases of a cognitive task. This nuanced organization reinforces the hypothesis of a direct involvement of the default mode network in cognitive functions, as represented by a dynamic rather than static interaction with specific task-positive networks, such as the working memory network.

The Default Mode Network and the Working Memory Network Are Not Anti-Correlated during All Phases of a Working Memory Task

PubMed Central

Piccoli, Tommaso; Valente, Giancarlo; Linden, David E. J.; Re, Marta; Esposito, Fabrizio; Sack, Alexander T.; Salle, Francesco Di

2015-01-01

Introduction The default mode network and the working memory network are known to be anti-correlated during sustained cognitive processing, in a load-dependent manner. We hypothesized that functional connectivity among nodes of the two networks could be dynamically modulated by task phases across time. Methods To address the dynamic links between default mode network and the working memory network, we used a delayed visuo-spatial working memory paradigm, which allowed us to separate three different phases of working memory (encoding, maintenance, and retrieval), and analyzed the functional connectivity during each phase within and between the default mode network and the working memory network networks. Results We found that the two networks are anti-correlated only during the maintenance phase of working memory, i.e. when attention is focused on a memorized stimulus in the absence of external input. Conversely, during the encoding and retrieval phases, when the external stimulation is present, the default mode network is positively coupled with the working memory network, suggesting the existence of a dynamically switching of functional connectivity between “task-positive” and “task-negative” brain networks. Conclusions Our results demonstrate that the well-established dichotomy of the human brain (anti-correlated networks during rest and balanced activation-deactivation during cognition) has a more nuanced organization than previously thought and engages in different patterns of correlation and anti-correlation during specific sub-phases of a cognitive task. This nuanced organization reinforces the hypothesis of a direct involvement of the default mode network in cognitive functions, as represented by a dynamic rather than static interaction with specific task-positive networks, such as the working memory network. PMID:25848951

Multicore Architecture-aware Scientific Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srinivasa, Avinash

Modern high performance systems are becoming increasingly complex and powerful due to advancements in processor and memory architecture. In order to keep up with this increasing complexity, applications have to be augmented with certain capabilities to fully exploit such systems. These may be at the application level, such as static or dynamic adaptations or at the system level, like having strategies in place to override some of the default operating system polices, the main objective being to improve computational performance of the application. The current work proposes two such capabilites with respect to multi-threaded scientific applications, in particular a largemore » scale physics application computing ab-initio nuclear structure. The first involves using a middleware tool to invoke dynamic adaptations in the application, so as to be able to adjust to the changing computational resource availability at run-time. The second involves a strategy for effective placement of data in main memory, to optimize memory access latencies and bandwidth. These capabilties when included were found to have a significant impact on the application performance, resulting in average speedups of as much as two to four times.« less

Parallel optical image addition and subtraction in a dynamic photorefractive memory by phase-code multiplexing

NASA Astrophysics Data System (ADS)

Denz, Cornelia; Dellwig, Thilo; Lembcke, Jan; Tschudi, Theo

1996-02-01

We propose and demonstrate experimentally a method for utilizing a dynamic phase-encoded photorefractive memory to realize parallel optical addition, subtraction, and inversion operations of stored images. The phase-encoded holographic memory is realized in photorefractive BaTiO3, storing eight images using WalshHadamard binary phase codes and an incremental recording procedure. By subsampling the set of reference beams during the recall operation, the selectivity of the phase address is decreased, allowing one to combine images in such a way that different linear combination of the images can be realized at the output of the memory.

Effects of Metformin on Spatial and Verbal Memory in Children with ASD and Overweight Associated with Atypical Antipsychotic Use.

PubMed

Aman, Michael G; Hollway, Jill A; Veenstra-VanderWeele, Jeremy; Handen, Benjamin L; Sanders, Kevin B; Chan, James; Macklin, Eric; Arnold, L Eugene; Wong, Taylor; Newsom, Cassandra; Hastie Adams, Rianne; Marler, Sarah; Peleg, Naomi; Anagnostou, Evdokia A

2018-05-01

Studies in humans and rodents suggest that metformin, a medicine typically used to treat type 2 diabetes, may have beneficial effects on memory. We sought to determine whether metformin improved spatial or verbal memory in children with autism spectrum disorder (ASD) and overweight associated with atypical antipsychotic use. We studied the effects of metformin (Riomet ® ) concentrate on spatial and verbal memory in 51 youth with ASD, ages 6 through 17 years, who were taking atypical antipsychotic medications, had gained significant weight, and were enrolled in a trial of metformin for weight management. Phase 1 was a 16-week, randomized, double-blind, placebo-controlled, parallel-group comparison of metformin (500-850 mg given twice a day) versus placebo. During Phase 2, all participants took open-label metformin from week 17 through week 32. We assessed spatial and verbal memory using the Neuropsychological Assessment 2nd Edition (NEPSY-II) and a modified children's verbal learning task. No measures differed between participants randomized to metformin versus placebo, at either 16 or 32 weeks, after adjustment for multiple comparisons. Sixteen-week change in memory for spatial location on the NEPSY-II was nominally better among participants randomized to placebo. However, patterns of treatment response across all measures revealed no systematic differences in performance, suggesting that metformin had no effect on spatial or verbal memory in these children. Although further study is needed to support these null effects, the overall impression is that metformin does not affect memory in overweight youth with ASD who were taking atypical antipsychotic medications.

Reducing the nucleation barrier in magnetocaloric Heusler alloys by nanoindentation

NASA Astrophysics Data System (ADS)

Niemann, R.; Hahn, S.; Diestel, A.; Backen, A.; Schultz, L.; Nielsch, K.; Wagner, M. F.-X.; Fähler, S.

2016-06-01

Magnetocaloric materials are promising as solid state refrigerants for more efficient and environmentally friendly cooling devices. The highest effects have been observed in materials that exhibit a first-order phase transition. These transformations proceed by nucleation and growth which lead to a hysteresis. Such irreversible processes are undesired since they heat up the material and reduce the efficiency of any cooling application. In this article, we demonstrate an approach to decrease the hysteresis by locally changing the nucleation barrier. We created artificial nucleation sites and analyzed the nucleation and growth processes in their proximity. We use Ni-Mn-Ga, a shape memory alloy that exhibits a martensitic transformation. Epitaxial films serve as a model system, but their high surface-to-volume ratio also allows for a fast heat transfer which is beneficial for a magnetocaloric regenerator geometry. Nanoindentation is used to create a well-defined defect. We quantify the austenite phase fraction in its proximity as a function of temperature which allows us to determine the influence of the defect on the transformation.

Impact of memory bottleneck on the performance of graphics processing units

NASA Astrophysics Data System (ADS)

Son, Dong Oh; Choi, Hong Jun; Kim, Jong Myon; Kim, Cheol Hong

2015-12-01

Recent graphics processing units (GPUs) can process general-purpose applications as well as graphics applications with the help of various user-friendly application programming interfaces (APIs) supported by GPU vendors. Unfortunately, utilizing the hardware resource in the GPU efficiently is a challenging problem, since the GPU architecture is totally different to the traditional CPU architecture. To solve this problem, many studies have focused on the techniques for improving the system performance using GPUs. In this work, we analyze the GPU performance varying GPU parameters such as the number of cores and clock frequency. According to our simulations, the GPU performance can be improved by 125.8% and 16.2% on average as the number of cores and clock frequency increase, respectively. However, the performance is saturated when memory bottleneck problems incur due to huge data requests to the memory. The performance of GPUs can be improved as the memory bottleneck is reduced by changing GPU parameters dynamically.

An fMRI investigation of the cognitive reappraisal of negative memories

PubMed Central

Holland, Alisha C.; Kensinger, Elizabeth A.

2013-01-01

Episodic memory retrieval can be influenced by individuals’ current goals, including those that are emotional in nature. Participants underwent an fMRI scan while reappraising, or changing the way they thought about aversive images they had previously encoded, to down-regulate (i.e., decrease), up-regulate (i.e., increase), or maintain the emotional intensity associated with their recall. A conjunction analysis between down- and up-regulation during the entire 12-sec recall period revealed that both commonly activated reappraisal-related regions, particularly in the lateral and medial prefrontal cortex (PFC). However, when we analyzed a reappraisal instruction phase prior to recall and then divided the recall phase into the time when individuals were first searching for their memories and later elaborating on their details, we found that down- and up-regulation engaged greater neural activity at different time points. Up-regulation engaged greater PFC activity than down-regulation or maintenance during the reappraisal instruction phase. In contrast, down-regulation engaged greater lateral PFC activity as images were being searched for and retrieved. Maintaining the emotional intensity associated with the aversive images engaged similar regions to a greater extent than either reappraisal condition as participants elaborated on the details of the images they were holding in mind. Our findings suggest that down- and up-regulation engage similar neural regions during memory retrieval, but differ in the timing of this engagement. PMID:23500898

Optical modular arithmetic

NASA Astrophysics Data System (ADS)

Pavlichin, Dmitri S.; Mabuchi, Hideo

2014-06-01

Nanoscale integrated photonic devices and circuits offer a path to ultra-low power computation at the few-photon level. Here we propose an optical circuit that performs a ubiquitous operation: the controlled, random-access readout of a collection of stored memory phases or, equivalently, the computation of the inner product of a vector of phases with a binary selector" vector, where the arithmetic is done modulo 2pi and the result is encoded in the phase of a coherent field. This circuit, a collection of cascaded interferometers driven by a coherent input field, demonstrates the use of coherence as a computational resource, and of the use of recently-developed mathematical tools for modeling optical circuits with many coupled parts. The construction extends in a straightforward way to the computation of matrix-vector and matrix-matrix products, and, with the inclusion of an optical feedback loop, to the computation of a weighted" readout of stored memory phases. We note some applications of these circuits for error correction and for computing tasks requiring fast vector inner products, e.g. statistical classification and some machine learning algorithms.

Acute stress negatively affects object recognition early memory consolidation and memory retrieval unrelated to state-dependency.

PubMed

Nelissen, Ellis; Prickaerts, Jos; Blokland, Arjan

2018-06-01

It is well known that stress affects memory performance. However, there still appears to be inconstancy in literature about how acute stress affects the different stages of memory: acquisition, consolidation and retrieval. In this study, we exposed rats to acute stress and measured the effect on memory performance in the object recognition task as a measure for episodic memory. Stress was induced 30 min prior to the learning phase to affect acquisition, directly after the learning phase to affect consolidation, or 30 min before the retrieval phase to affect retrieval. Additionally, we induced stress both 30 min prior to the learning phase and 30 min prior to the retrieval phase to test whether the effects were related to state-dependency. As expected, we found that acute stress did not affect acquisition but had a negative impact on retrieval. To our knowledge, we are the first to show that early consolidation was negatively affected by acute stress. We also show that stress does not have a state-dependent effect on memory. Copyright © 2018 Elsevier B.V. All rights reserved.

PVDF-based semicrystalline-amorphous blends: Phase behavior and thermomechanical properties

NASA Astrophysics Data System (ADS)

Campo, Cheryl Josephine

Poly(vinylidene fluoride) [PVDF]-based semicrystalline-amorphous blends were studied to better understand the degree to which transition temperatures and mechanical properties could be varied as a function of composition. Changes in the amorphous component, processing parameters, MW, and filler content were used to manipulate blend properties. Compositional and MW series of PVDF:poly(vinyl acetate) [PVAc] blends were prepared and characterized. Varying PVDF content led to appreciable changes in crystallinity. In contrast, the effect of composition on blend glass transition temperature, Tg, was manifested only at low PVDF contents. The effect of MWPVA, on the 30:70 PVDF:PVAc composition was manifested primarily in the materials' viscoelastic response to deformation. Ternary blends of PVDF, PVAc, and poly(methyl methacrylate) [PMMA] showed limited miscibility with both a PVAc- and PMMA-rich amorphous phase apparent in all the compositions tested. PVDF:PMMA blends on the other hand exhibited good miscibility characterized by tunable Tg values which were further exploited by varying the processing conditions in order to obtain thermomechanical properties ideal for bio-related shape memory applications. PVDF:poly(ethyl methacrylate) [PEMA] blends, despite having very broad transitions, similarly exhibited desirable transition temperatures for in vivo actuation. The effect of boron nitride (BN), short carbon fibers (SCF), and clay on blend properties was also assessed. SCF filler in 50:50 PVDF:PMMA led mainly to the formation of PVDF crystals in the alpha form, clay was observed to promote growth of the beta crystal form, and BN led to a mixture of crystal forms. BN also exhibited interesting effects in the creep behavior of this system as well as the crystallization behavior of the 50:50 PVDF:PEMA blend, suppressed kinetic crystallization competing with enhanced nucleation effect under isothermal conditions observed in the latter. Depending on the processing conditions used, SCF was found to have similar nucleation effects in the 50:50 PVDF:PMMA blend but diminished degrees of crystallinity overall. Finally, shape memory behavior of PVDF:PVAc blends as well as SCF-filled 50:50 PVDF:PMMA was characterized using single and multiple shape memory cycles. Increasing PVDF content had a negative impact on PVDF:PVAc shape memory properties while increasing stress was found to have an enhancing effect as did low SCF filler content in 50:50 PVDF:PMMA.

Review of Development Survey of Phase Change Material Models in Building Applications

PubMed Central

Akeiber, Hussein J.; Wahid, Mazlan A.; Hussen, Hasanen M.; Mohammad, Abdulrahman Th.

2014-01-01

The application of phase change materials (PCMs) in green buildings has been increasing rapidly. PCM applications in green buildings include several development models. This paper briefly surveys the recent research and development activities of PCM technology in building applications. Firstly, a basic description of phase change and their principles is provided; the classification and applications of PCMs are also included. Secondly, PCM models in buildings are reviewed and discussed according to the wall, roof, floor, and cooling systems. Finally, conclusions are presented based on the collected data. PMID:25313367

Overview of Probe-based Storage Technologies

NASA Astrophysics Data System (ADS)

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-07-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Overview of Probe-based Storage Technologies.

PubMed

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-12-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Attenuation of the NMR signal in a field gradient due to stochastic dynamics with memory

NASA Astrophysics Data System (ADS)

Lisý, Vladimír; Tóthová, Jana

2017-03-01

The attenuation function S(t) for an ensemble of spins in a magnetic-field gradient is calculated by accumulation of the phase shifts in the rotating frame resulting from the displacements of spin-bearing particles. The found S(t), expressed through the particle mean square displacement, is applicable for any kind of stationary stochastic motion of spins, including their non-markovian dynamics with memory. The known expressions valid for normal and anomalous diffusion are obtained as special cases in the long time approximation. The method is also applicable to the NMR pulse sequences based on the refocusing principle. This is demonstrated by describing the Hahn spin echo experiment. The attenuation of the NMR signal is also evaluated providing that the random motion of particle is modeled by the generalized Langevin equation with the memory kernel exponentially decaying in time. The models considered in our paper assume massive particles driven by much smaller particles.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; CNRS, SPINTEC, F-38000 Grenoble

2015-05-07

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remainingmore » in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.« less

Fault-Tolerant VLSI Design Assessments for Advanced Avionics Department. Literature Review. Phase 1

DTIC Science & Technology

1982-02-05

negative sense. Another facet of the literature review is to acquaint the researchers with the immense literature base for electronic technology applicable ...Riley, "Special Report: Semiconductor Memories are Tested Over Data-Storage Application ", Electronics, vol. 46, August 19. G. Luecke, J. P. Mize and W...Design and Evaluation of Self-Checking Systems", Report Submitted to the Mathematical and Information Science Division of the Office of Naval

Altered object exploration but not temporal order memory retrieval in an object recognition test following treatment of rats with the group II metabotropic glutamate receptor agonist LY379268.

PubMed

Lins, Brittney R; Ballendine, Stephanie A; Howland, John G

2014-02-07

Temporal order memory refers to the ability to distinguish past experiences in the order that they occurred. Temporal order memory for objects is often tested in rodents using spontaneous object recognition paradigms. The circuitry mediating memory in these tests is distributed and involves ionotropic glutamate receptors in the perirhinal cortex and medial prefrontal cortex. It is unknown what role, if any, metabotropic glutamate receptors have in temporal order memory for objects. The present experiment examined the role of metabotropic glutamate receptors in temporal memory retrieval using the group II metabotropic glutamate receptor selective agonist LY379268. Rats were trained on a temporal memory test with three phases: two sample phases (60 min between them) in which rats explored two novel objects and a test phase (60 min after the second sample phase) which included a copy of each object previously encountered. Under these conditions, we confirmed that rats showed a significant exploratory preference for the object presented during the first sample phase. In a second experiment, we found that LY379268 (0.3, 1.0, or 3.0mg/kg; i.p.; 30 min before the test phase) had no effect on temporal memory retrieval but dose-dependently reduced time spent exploring the objects. Our results show that enhancing mGluR2 activity under conditions when TM is intact does not influence memory retrieval. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

The Library and Human Memory Simulation Studies. Reports on File Organization Studies.

ERIC Educational Resources Information Center

Reilly, Kevin D.

This report describes digital computer simulation efforts in a study of memory systems for two important cases: that of the individual the brain; and that of society, the library. A neural system model is presented in which a complex system is produced by connecting simple hypothetical neurons whose states change under application of a…

Master-equation approach to the study of phase-change processes in data storage media

NASA Astrophysics Data System (ADS)

Blyuss, K. B.; Ashwin, P.; Bassom, A. P.; Wright, C. D.

2005-07-01

We study the dynamics of crystallization in phase-change materials using a master-equation approach in which the state of the crystallizing material is described by a cluster size distribution function. A model is developed using the thermodynamics of the processes involved and representing the clusters of size two and greater as a continuum but clusters of size one (monomers) as a separate equation. We present some partial analytical results for the isothermal case and for large cluster sizes, but principally we use numerical simulations to investigate the model. We obtain results that are in good agreement with experimental data and the model appears to be useful for the fast simulation of reading and writing processes in phase-change optical and electrical memories.

Memory Asymmetry of Forward and Backward Associations in Recognition Tasks

PubMed Central

Yang, Jiongjiong; Zhu, Zijian; Mecklinger, Axel; Fang, Zhiyong; Li, Han

2013-01-01

There is an intensive debate on whether memory for serial order is symmetric. The objective of this study was to explore whether associative asymmetry is modulated by memory task (recognition vs. cued recall). Participants were asked to memorize word triples (Experiment 1–2) or pairs (Experiment 3–6) during the study phase. They then recalled the word by a cue during a cued recall task (Experiment 1–4), and judged whether the presented two words were in the same or in a different order compared to the study phase during a recognition task (Experiment 1–6). To control for perceptual matching between the study and test phase, participants were presented with vertical test pairs when they made directional judgment in Experiment 5. In Experiment 6, participants also made associative recognition judgments for word pairs presented at the same or the reversed position. The results showed that forward associations were recalled at similar levels as backward associations, and that the correlations between forward and backward associations were high in the cued recall tasks. On the other hand, the direction of forward associations was recognized more accurately (and more quickly) than backward associations, and their correlations were comparable to the control condition in the recognition tasks. This forward advantage was also obtained for the associative recognition task. Diminishing positional information did not change the pattern of associative asymmetry. These results suggest that associative asymmetry is modulated by cued recall and recognition manipulations, and that direction as a constituent part of a memory trace can facilitate associative memory. PMID:22924326

Event-related Potentials Reveal Age Differences in the Encoding and Recognition of Scenes

PubMed Central

Gutchess, Angela H.; Ieuji, Yoko; Federmeier, Kara D.

2009-01-01

The present study used event-related potentials (ERPs) to investigate how the encoding and recognition of complex scenes change with normal aging. Although functional magnetic resonance imaging (fMRI) studies have identified more drastic age impairments at encoding than at recognition, ERP studies accumulate more evidence for age differences at retrieval. However, stimulus type and paradigm differences across the two literatures have made direct comparisons difficult. Here, we collected young and elderly adults’ encoding- and recognition-phase ERPs using the same materials and paradigm as a previous fMRI study. Twenty young and 20 elderly adults incidentally encoded and then recognized photographs of outdoor scenes. During encoding, young adults showed a frontocentral subsequent memory effect, with high-confidence hits exhibiting greater positivity than misses. Elderly adults showed a similar subsequent memory effect, which, however, did not differ as a function of confidence. During recognition, young adults elicited a widespread old/new effect, and high-confidence hits were distinct from both low-confidence hits and false alarms. Elderly adults elicited a smaller and later old/new effect, which was unaffected by confidence, and hits and false alarms were indistinguishable in the waveforms. Consistent with prior ERP work, these results point to important age-related changes in recognition-phase brain activity, even when behavioral measures of memory and confidence pattern similarly across groups. We speculate that memory processes with different time signatures contribute to the apparent differences across encoding and retrieval stages, and across methods. PMID:17583986

Fragility of haptic memory in human full-term newborns.

PubMed

Lejeune, Fleur; Borradori Tolsa, Cristina; Gentaz, Edouard; Barisnikov, Koviljka

2018-05-31

Numerous studies have established that newborns can memorize tactile information about the specific features of an object with their hands and detect differences with another object. However, the robustness of haptic memory abilities has already been examined in preterm newborns and in full-term infants, but not yet in full-term newborns. This research is aimed to better understand the robustness of haptic memory abilities at birth by examining the effects of a change in the objects' temperature and haptic interference. Sixty-eight full-term newborns (mean postnatal age: 2.5 days) were included. The two experiments were conducted in three phases: habituation (repeated presentation of the same object, a prism or cylinder in the newborn's hand), discrimination (presentation of a novel object), and recognition (presentation of the familiar object). In Experiment 1, the change in the objects' temperature was controlled during the three phases. Results reveal that newborns can memorize specific features that differentiate prism and cylinder shapes by touch, and discriminate between them, but surprisingly they did not show evidence of recognizing them after interference. As no significant effect of the temperature condition was observed in habituation, discrimination and recognition abilities, these findings suggest that discrimination abilities in newborns may be determined by the detection of shape differences. Overall, it seems that the ontogenesis of haptic recognition memory is not linear. The developmental schedule is likely crucial for haptic development between 34 and 40 GW. Copyright © 2018 Elsevier Inc. All rights reserved.

Slow oscillation amplitudes and up-state lengths relate to memory improvement.

PubMed

Heib, Dominik P J; Hoedlmoser, Kerstin; Anderer, Peter; Zeitlhofer, Josef; Gruber, Georg; Klimesch, Wolfgang; Schabus, Manuel

2013-01-01

There is growing evidence of the active involvement of sleep in memory consolidation. Besides hippocampal sharp wave-ripple complexes and sleep spindles, slow oscillations appear to play a key role in the process of sleep-associated memory consolidation. Furthermore, slow oscillation amplitude and spectral power increase during the night after learning declarative and procedural memory tasks. However, it is unresolved whether learning-induced changes specifically alter characteristics of individual slow oscillations, such as the slow oscillation up-state length and amplitude, which are believed to be important for neuronal replay. 24 subjects (12 men) aged between 20 and 30 years participated in a randomized, within-subject, multicenter study. Subjects slept on three occasions for a whole night in the sleep laboratory with full polysomnography. Whereas the first night only served for adaptation purposes, the two remaining nights were preceded by a declarative word-pair task or by a non-learning control task. Slow oscillations were detected in non-rapid eye movement sleep over electrode Fz. Results indicate positive correlations between the length of the up-state as well as the amplitude of both slow oscillation phases and changes in memory performance from pre to post sleep. We speculate that the prolonged slow oscillation up-state length might extend the timeframe for the transfer of initial hippocampal to long-term cortical memory representations, whereas the increase in slow oscillation amplitudes possibly reflects changes in the net synaptic strength of cortical networks.

Thermo-mechanical behavior and structure of melt blown shape-memory polyurethane nonwovens.

PubMed

Safranski, David L; Boothby, Jennifer M; Kelly, Cambre N; Beatty, Kyle; Lakhera, Nishant; Frick, Carl P; Lin, Angela; Guldberg, Robert E; Griffis, Jack C

2016-09-01

New processing methods for shape-memory polymers allow for tailoring material properties for numerous applications. Shape-memory nonwovens have been previously electrospun, but melt blow processing has yet to be evaluated. In order to determine the process parameters affecting shape-memory behavior, this study examined the effect of air pressure and collector speed on the mechanical behavior and shape-recovery of shape-memory polyurethane nonwovens. Mechanical behavior was measured by dynamic mechanical analysis and tensile testing, and shape-recovery was measured by unconstrained and constrained recovery. Microstructure changes throughout the shape-memory cycle were also investigated by micro-computed tomography. It was found that increasing collector speed increases elastic modulus, ultimate strength and recovery stress of the nonwoven, but collector speed does not affect the failure strain or unconstrained recovery. Increasing air pressure decreases the failure strain and increases rubbery modulus and unconstrained recovery, but air pressure does not influence recovery stress. It was also found that during the shape-memory cycle, the connectivity density of the fibers upon recovery does not fully return to the initial values, accounting for the incomplete shape-recovery seen in shape-memory nonwovens. With these parameter to property relationships identified, shape-memory nonwovens can be more easily manufactured and tailored for specific applications. Copyright © 2016 Elsevier Ltd. All rights reserved.

Generalized nucleation and looping model for epigenetic memory of histone modifications

PubMed Central

Erdel, Fabian; Greene, Eric C.

2016-01-01

Histone modifications can redistribute along the genome in a sequence-independent manner, giving rise to chromatin position effects and epigenetic memory. The underlying mechanisms shape the endogenous chromatin landscape and determine its response to ectopically targeted histone modifiers. Here, we simulate linear and looping-driven spreading of histone modifications and compare both models to recent experiments on histone methylation in fission yeast. We find that a generalized nucleation-and-looping mechanism describes key observations on engineered and endogenous methylation domains including intrinsic spatial confinement, independent regulation of domain size and memory, variegation in the absence of antagonists, and coexistence of short- and long-term memory at loci with weak and strong constitutive nucleation. These findings support a straightforward relationship between the biochemical properties of chromatin modifiers and the spatiotemporal modification pattern. The proposed mechanism gives rise to a phase diagram for cellular memory that may be generally applicable to explain epigenetic phenomena across different species. PMID:27382173

Tracking Cognitive Change over 24 Weeks with Longitudinal Functional Magnetic Resonance Imaging in Alzheimer's Disease

PubMed Central

McLaren, Donald G.; Sreenivasan, Aishwarya; Diamond, Eli L.; Mitchell, Meghan B.; Van Dijk, Koene R.A.; DeLuca, Amy N.; O’Brien, Jacqueline L.; Rentz, Dorene M.; Sperling, Reisa A.; Atri, Alireza

2012-01-01

Background Previous studies have revealed that functional magnetic resonance imaging (fMRI) blood oxygen level-dependent (BOLD) signal in specific brain regions correlates with cross-sectional performance on standardized clinical trial measures in Alzheimer's disease (AD); however, the relationship between longitudinal change in fMRI-BOLD signal and neuropsychological performance remains unknown. Objective: To identify changes in regional fMRI-BOLD activity that tracks change in neuropsychological performance in mild AD dementia over 6 months. Methods Twenty-four subjects (mean age 71.6) with mild AD dementia (mean Mini Mental State Examination 21.7, Global Clinical Dementia Rating 1.0) on stable donepezil dosing participated in two task-related fMRI sessions consisting of a face-name paired associative encoding memory paradigm 24 weeks apart during a randomized placebo-controlled pharmaco-fMRI drug study. Regression analysis was used to identify regions where the change in fMRI activity for Novel > Repeated stimulus contrast was associated with the change scores on postscan memory tests and the Free and Cued Selective Reminding Test (FCSRT). Results Correlations between changes in postscan memory accuracy and changes in fMRI activity were observed in regions including the angular gyrus, parahippocampal gyrus, inferior frontal gyrus and cerebellum. Correlations between changes in FCSRT-free recall and changes in fMRI were observed in regions including the inferior parietal lobule, precuneus, hippocampus and parahippocampal gyrus. Conclusion Changes in encoding-related fMRI activity in regions implicated in mnemonic networks correlated with changes in psychometric measures of episodic memory retrieval performed outside the scanner. These exploratory results support the potential of fMRI activity to track cognitive change and detect signals of short-term pharmacologic effect in early-phase AD studies. PMID:22456451

Tracking cognitive change over 24 weeks with longitudinal functional magnetic resonance imaging in Alzheimer's disease.

PubMed

McLaren, Donald G; Sreenivasan, Aishwarya; Diamond, Eli L; Mitchell, Meghan B; Van Dijk, Koene R A; Deluca, Amy N; O'Brien, Jacqueline L; Rentz, Dorene M; Sperling, Reisa A; Atri, Alireza

2012-01-01

Previous studies have revealed that functional magnetic resonance imaging (fMRI) blood oxygen level-dependent (BOLD) signal in specific brain regions correlates with cross-sectional performance on standardized clinical trial measures in Alzheimer's disease (AD); however, the relationship between longitudinal change in fMRI-BOLD signal and neuropsychological performance remains unknown. To identify changes in regional fMRI-BOLD activity that tracks change in neuropsychological performance in mild AD dementia over 6 months. Twenty-four subjects (mean age 71.6) with mild AD dementia (mean Mini Mental State Examination 21.7, Global Clinical Dementia Rating 1.0) on stable donepezil dosing participated in two task-related fMRI sessions consisting of a face-name paired associative encoding memory paradigm 24 weeks apart during a randomized placebo-controlled pharmaco-fMRI drug study. Regression analysis was used to identify regions where the change in fMRI activity for Novel > Repeated stimulus contrast was associated with the change scores on postscan memory tests and the Free and Cued Selective Reminding Test (FCSRT). Correlations between changes in postscan memory accuracy and changes in fMRI activity were observed in regions including the angular gyrus, parahippocampal gyrus, inferior frontal gyrus and cerebellum. Correlations between changes in FCSRT-free recall and changes in fMRI were observed in regions including the inferior parietal lobule, precuneus, hippocampus and parahippocampal gyrus. Changes in encoding-related fMRI activity in regions implicated in mnemonic networks correlated with changes in psychometric measures of episodic memory retrieval performed outside the scanner. These exploratory results support the potential of fMRI activity to track cognitive change and detect signals of short-term pharmacologic effect in early-phase AD studies. Copyright © 2012 S. Karger AG, Basel.

An authenticated image encryption scheme based on chaotic maps and memory cellular automata

NASA Astrophysics Data System (ADS)

Bakhshandeh, Atieh; Eslami, Ziba

2013-06-01

This paper introduces a new image encryption scheme based on chaotic maps, cellular automata and permutation-diffusion architecture. In the permutation phase, a piecewise linear chaotic map is utilized to confuse the plain-image and in the diffusion phase, we employ the Logistic map as well as a reversible memory cellular automata to obtain an efficient and secure cryptosystem. The proposed method admits advantages such as highly secure diffusion mechanism, computational efficiency and ease of implementation. A novel property of the proposed scheme is its authentication ability which can detect whether the image is tampered during the transmission or not. This is particularly important in applications where image data or part of it contains highly sensitive information. Results of various analyses manifest high security of this new method and its capability for practical image encryption.

Contextual memory and skill transfer in category search.

PubMed

Kole, James A; Healy, Alice F; Fierman, Deanna M; Bourne, Lyle E

2010-01-01

In three experiments, we examined transfer and contextual memory in a category search task. Each experiment included two phases (training and test), during which participants searched through category and exemplar menus for targets. In Experiment 1, the targets were from one of two domains during training (grocery store or department store); the domain was either the same or changed at test. Also, the categories were organized in one of two ways (alphabetically or semantically); the organization either remained the same or changed at test. In Experiments 2 and 3, domain and organization were held constant; however, categories or exemplars were the same, partially replaced, or entirely replaced across phases in order to simulate the dynamic nature of category search in everyday situations. Transfer occurred at test when the category organization or domain was maintained and when the categories or exemplars matched (partially or entirely) those at training. These results demonstrate that transfer is facilitated by overlap in training and testing contexts.

High Storage Efficiency and Large Fractional Delay of EIT-Based Memory

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite

2013-05-01

In long-distance quantum communication and optical quantum computation, an efficient and long-lived quantum memory is an important component. We first experimentally demonstrated that a time-space-reversing method plus the optimum pulse shape can improve the storage efficiency (SE) of light pulses to 78% in cold media based on the effect of electromagnetically induced transparency (EIT). We obtain a large fractional delay of 74 at 50% SE, which is the best record so far. The measured classical fidelity of the recalled pulse is higher than 90% and nearly independent of the storage time, implying that the optical memory maintains excellent phase coherence. Our results suggest the current result may be readily applied to single-photon quantum states due to quantum nature of the EIT light-matter inference. This study advances the EIT-based quantum memory in practical quantum information applications.

Topographic contribution of early visual cortex to short-term memory consolidation: a transcranial magnetic stimulation study.

PubMed

van de Ven, Vincent; Jacobs, Christianne; Sack, Alexander T

2012-01-04

The neural correlates for retention of visual information in visual short-term memory are considered separate from those of sensory encoding. However, recent findings suggest that sensory areas may play a role also in short-term memory. We investigated the functional relevance, spatial specificity, and temporal characteristics of human early visual cortex in the consolidation of capacity-limited topographic visual memory using transcranial magnetic stimulation (TMS). Topographically specific TMS pulses were delivered over lateralized occipital cortex at 100, 200, or 400 ms into the retention phase of a modified change detection task with low or high memory loads. For the high but not the low memory load, we found decreased memory performance for memory trials in the visual field contralateral, but not ipsilateral to the side of TMS, when pulses were delivered at 200 ms into the retention interval. A behavioral version of the TMS experiment, in which a distractor stimulus (memory mask) replaced the TMS pulses, further corroborated these findings. Our findings suggest that retinotopic visual cortex contributes to the short-term consolidation of topographic visual memory during early stages of the retention of visual information. Further, TMS-induced interference decreased the strength (amplitude) of the memory representation, which most strongly affected the high memory load trials.

Application of Nondestructive Testing Techniques to Materials Testing.

DTIC Science & Technology

1984-01-01

describes enjoy the same luxury. Real-time interpolation of the data set the dynamic-range limitations of real-time digital imaging sys - terns due to...delta encoded, ELEMENT %’. ~ ._________ litlcrcrtnen t) hr t is currtent value. I n DAI SY . thle accumulator is% a sitmple up-co uriter, and the binary...roughly 36 A. Phase Qrittization antd Phase Qiuan:ti, ’o / rr, r kilolbytes of focus mem-ory. 2 Such an architecture requtres For :i sy -,𔃾 @tl V.it)1 M)0

Acoustic Enhancement of Sleep Slow Oscillations and Concomitant Memory Improvement in Older Adults

PubMed Central

Papalambros, Nelly A.; Santostasi, Giovanni; Malkani, Roneil G.; Braun, Rosemary; Weintraub, Sandra; Paller, Ken A.; Zee, Phyllis C.

2017-01-01

Acoustic stimulation methods applied during sleep in young adults can increase slow wave activity (SWA) and improve sleep-dependent memory retention. It is unknown whether this approach enhances SWA and memory in older adults, who generally have reduced SWA compared to younger adults. Additionally, older adults are at risk for age-related cognitive impairment and therefore may benefit from non-invasive interventions. The aim of this study was to determine if acoustic stimulation can increase SWA and improve declarative memory in healthy older adults. Thirteen participants 60–84 years old completed one night of acoustic stimulation and one night of sham stimulation in random order. During sleep, a real-time algorithm using an adaptive phase-locked loop modeled the phase of endogenous slow waves in midline frontopolar electroencephalographic recordings. Pulses of pink noise were delivered when the upstate of the slow wave was predicted. Each interval of five pulses (“ON interval”) was followed by a pause of approximately equal length (“OFF interval”). SWA during the entire sleep period was similar between stimulation and sham conditions, whereas SWA and spindle activity were increased during ON intervals compared to matched periods during the sham night. The increases in SWA and spindle activity were sustained across almost the entire five-pulse ON interval compared to matched sham periods. Verbal paired-associate memory was tested before and after sleep. Overnight improvement in word recall was significantly greater with acoustic stimulation compared to sham and was correlated with changes in SWA between ON and OFF intervals. Using the phase-locked-loop method to precisely target acoustic stimulation to the upstate of sleep slow oscillations, we were able to enhance SWA and improve sleep-dependent memory storage in older adults, which strengthens the theoretical link between sleep and age-related memory integrity. PMID:28337134

[Neuropsychology of mildly disabled patients with relapsing-remitting multiple sclerosis].

PubMed

Santiago Rolanía, Olga; Guàrdia Olmos, Joan; Arbizu Urdiain, Txomin

2006-02-01

Previous papers have mainly demonstrated the presence of cognitive impairment in patients with multiple sclerosis (MS), these changes have been traditionally associated with the later stages of the disease. In the current study, a comprehensive neuropsychological battery was administered to 216 relapsing-remitting MS patients with mild clinical disability (EDSS

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Reversible inactivation of interpeduncular nucleus impairs memory consolidation and retrieval but not learning in rats: A behavioral and molecular study.

PubMed

Khatami, Leila; Khodagholi, Fariba; Motamedi, Fereshteh

2018-04-16

The Interpedundular nucleus (IPN) is a small midbrain structure located deeply between the two cerebral peduncles. The strategic placement of this nucleus makes it a possible relay between structures involved in the modulation of hippocampal theta rhythm activity. In this study we aimed to investigate how reversible inactivation of IPN could affect the acquisition, consolidation and retrieval phases of memory in passive avoidance (PA) and Morris water maze (MWM) tasks. To support our data, molecular studies were performed in order to detect possible changes in the expression of proteins related to learning and memory in the hippocampus. To address this issue rats' IPN was reversibly inactivated by microinjection of lidocaine hydrochloride (4%). After the behavioral studies, the phosphorylation of CREB and P70, and c-fos expression levels in the hippocampus were determined using western blotting and immunohistochemistry respectively. Our results in the PA and MWM tasks showed that IPN reversible inactivation could impair immediate post training consolidation and retrieval while it had no effect on the acquisition phase. In addition, there was a deficit in the retention of the MWM working memory. Our data showed the ratio of pCREB/CREB, pP70/P70 and c-fos expression in the hippocampus significantly decreased after IPN reversible inactivation. Collectively, the results show that behaviorally defined changes could be due to what happens molecularly in the hippocampus after IPN reversible inactivation. It is concluded that IPN not only makes part of a network involved in the modulation of hippocampal theta rhythm activity, but also is actively engaged in hippocampal memory formation. Copyright © 2018 Elsevier B.V. All rights reserved.

Thermal Annealing to Modulate the Shape Memory Behavior of a Biobased and Biocompatible Triblock Copolymer Scaffold in the Human Body Temperature Range.

PubMed

Merlettini, Andrea; Gigli, Matteo; Ramella, Martina; Gualandi, Chiara; Soccio, Michelina; Boccafoschi, Francesca; Munari, Andrea; Lotti, Nadia; Focarete, Maria Letizia

2017-08-14

A biodegradable and biocompatible electrospun scaffold with shape memory behavior in the physiological temperature range is here presented. It was obtained starting from a specifically designed, biobased PLLA-based triblock copolymer, where the central block is poly(propylene azelate-co-propylene sebacate) (P(PAz60PSeb40)) random copolymer. Shape memory properties are determined by the contemporary presence of the low melting crystals of the P(PAz60PSeb40) block, acting as switching segment, and of the high melting crystal phase of PLLA blocks, acting as physical network. It is demonstrated that a straightforward annealing process applied to the crystal phase of the switching element gives the possibility to tune the shape recovery temperature from about 25 to 50 °C, without the need of varying the copolymer's chemical structure. The thermal annealing approach here presented can be thus considered a powerful strategy for "ad hoc" programming the same material for applications requiring different recovery temperatures. Fibroblast culture experiments demonstrated scaffold biocompatibility.

Enhanced stability of Bi-doped Ge2Sb2Te5 amorphous films

NASA Astrophysics Data System (ADS)

Dyussembayev, S.; Prikhodko, O.; Tsendin, K.; Timoshenkov, S.; Korobova, N.

2014-09-01

Although, several reviews have appeared on various physical properties and applications of chalcogenide glasses, there is no thorough study of local atomic structure and its modification for eutectic Ge-Sb-Te alloys doped with Bi. Ge2Sb2Te5 pure and Bi-doped films were deposited by ion-plasma sputtering method of synthesized GTS material on Si (100) and glass substrates coated with a conductive Al layer which was used as a bottom electrode. Current-voltage characteristics of different points of the same samples have been measured. Random distribution of inclusions within the sample made it possible to investigate the dependence of switching and memory effects on the phase composition at a constant value of other parameters. Measurements in the current controlled mode clearly showed that the memory state formation voltage does not depend on current in a wide range. Results indicate that the development of imaging technologies phase memory cells need to pay special attention to the conditions of Ge-Sb-Te film preparation. To increase the number of cycles "write - erase" should be additional prolonged annealing of the synthesized films.

Shape memory polymer sensors for tracking cumulative environmental exposure

NASA Astrophysics Data System (ADS)

Snyder, Ryan; Rauscher, Michael; Vining, Ben; Havens, Ernie; Havens, Teresa; McFerran, Jace

2010-04-01

Cornerstone Research Group Inc. (CRG) has developed environmental exposure tracking (EET) sensors using shape memory polymers (SMP) to monitor the degradation of perishable items, such as munitions, foods and beverages, or medicines, by measuring the cumulative exposure to temperature and moisture. SMPs are polymers whose qualities have been altered to give them dynamic shape "memory" properties. Under thermal or moisture stimuli, the SMP exhibits a radical change from a rigid thermoset to a highly flexible, elastomeric state. The dynamic response of the SMP can be tailored to match the degradation profile of the perishable item. SMP-based EET sensors require no digital memory or internal power supply and provide the capability of inexpensive, long-term life cycle monitoring of thermal and moisture exposure over time. This technology was developed through Phase I and Phase II SBIR efforts with the Navy. The emphasis of current research centers on transitioning SMP materials from the lab bench to a production environment. Here, CRG presents the commercialization progress of thermally-activated EET sensors, focusing on fabrication scale-up, process refinements, and quality control. In addition, progress on the development of vapor pressure-responsive SMP (VPR-SMP) will be discussed.

Menstrual cycle influence on cognitive function and emotion processing-from a reproductive perspective.

PubMed

Sundström Poromaa, Inger; Gingnell, Malin

2014-01-01

The menstrual cycle has attracted research interest ever since the 1930s. For many researchers the menstrual cycle is an excellent model of ovarian steroid influence on emotion, behavior, and cognition. Over the past years methodological improvements in menstrual cycle studies have been noted, and this review summarizes the findings of methodologically sound menstrual cycle studies in healthy women. Whereas the predominant hypotheses of the cognitive field state that sexually dimorphic cognitive skills that favor men are improved during menstrual cycle phases with low estrogen and that cognitive skills that favor women are improved during cycle phases with increased estrogen and/or progesterone, this review has not found sufficient evidence to support any of these hypotheses. Mental rotation has gained specific interest in this aspect, but a meta-analysis yielded a standardized mean difference in error rate of 1.61 (95% CI -0.35 to 3.57), suggesting, at present, no favor of an early follicular phase improvement in mental rotation performance. Besides the sexually dimorphic cognitive skills, studies exploring menstrual cycle effects on tasks that probe prefrontal cortex function, for instance verbal or spatial working memory, have also been reviewed. While studies thus far are few, results at hand suggest improved performance at times of high estradiol levels. Menstrual cycle studies on emotional processing, on the other hand, tap into the emotional disorders of the luteal phase, and may be of relevance for women with premenstrual disorders. Although evidence at present is limited, it is suggested that emotion recognition, consolidation of emotional memories, and fear extinction is modulated by the menstrual cycle in women. With the use of functional magnetic resonance imaging, several studies report changes in brain reactivity across the menstrual cycle, most notably increased amygdala reactivity in the luteal phase. Thus, to the extent that behavioral changes have been demonstrated over the course of the menstrual cycle, the best evidence suggests that differences in sexually dimorphic tasks are small and difficult to replicate. However, emotion-related changes are more consistently found, and are better associated with progesterone than with estradiol such that high progesterone levels are associated with increased amygdala reactivity and increased emotional memory.

Menstrual cycle influence on cognitive function and emotion processing—from a reproductive perspective

PubMed Central

Sundström Poromaa, Inger; Gingnell, Malin

2014-01-01

The menstrual cycle has attracted research interest ever since the 1930s. For many researchers the menstrual cycle is an excellent model of ovarian steroid influence on emotion, behavior, and cognition. Over the past years methodological improvements in menstrual cycle studies have been noted, and this review summarizes the findings of methodologically sound menstrual cycle studies in healthy women. Whereas the predominant hypotheses of the cognitive field state that sexually dimorphic cognitive skills that favor men are improved during menstrual cycle phases with low estrogen and that cognitive skills that favor women are improved during cycle phases with increased estrogen and/or progesterone, this review has not found sufficient evidence to support any of these hypotheses. Mental rotation has gained specific interest in this aspect, but a meta-analysis yielded a standardized mean difference in error rate of 1.61 (95% CI −0.35 to 3.57), suggesting, at present, no favor of an early follicular phase improvement in mental rotation performance. Besides the sexually dimorphic cognitive skills, studies exploring menstrual cycle effects on tasks that probe prefrontal cortex function, for instance verbal or spatial working memory, have also been reviewed. While studies thus far are few, results at hand suggest improved performance at times of high estradiol levels. Menstrual cycle studies on emotional processing, on the other hand, tap into the emotional disorders of the luteal phase, and may be of relevance for women with premenstrual disorders. Although evidence at present is limited, it is suggested that emotion recognition, consolidation of emotional memories, and fear extinction is modulated by the menstrual cycle in women. With the use of functional magnetic resonance imaging, several studies report changes in brain reactivity across the menstrual cycle, most notably increased amygdala reactivity in the luteal phase. Thus, to the extent that behavioral changes have been demonstrated over the course of the menstrual cycle, the best evidence suggests that differences in sexually dimorphic tasks are small and difficult to replicate. However, emotion-related changes are more consistently found, and are better associated with progesterone than with estradiol such that high progesterone levels are associated with increased amygdala reactivity and increased emotional memory. PMID:25505380

A Review of Selective Laser Melted NiTi Shape Memory Alloy

PubMed Central

Khoo, Zhong Xun; Shen, Yu Fang

2018-01-01

NiTi shape memory alloys (SMAs) have the best combination of properties among the different SMAs. However, the limitations of conventional manufacturing processes and the poor manufacturability of NiTi have critically limited its full potential applicability. Thus, additive manufacturing, commonly known as 3D printing, has the potential to be a solution in fabricating complex NiTi smart structures. Recently, a number of studies on Selective Laser Melting (SLM) of NiTi were conducted to explore the various aspects of SLM-produced NiTi. Compared to producing conventional metals through the SLM process, the fabrication of NiTi SMA is much more challenging. Not only do the produced parts require a high density that leads to good mechanical properties, strict composition control is needed as well for the SLM NiTi to possess suitable phase transformation characteristics. Additionally, obtaining a good shape memory effect from the SLM NiTi samples is another challenging task that requires further understanding. This paper presents the results of the effects of energy density and SLM process parameters on the properties of SLM NiTi. Its shape memory properties and potential applications were then reviewed and discussed. PMID:29596320

Exploiting heat treatment effects on SMAs macro and microscopic properties in developing fire protection devices

NASA Astrophysics Data System (ADS)

Burlacu, L.; Cimpoeşu, N.; Bujoreanu, L. G.; Lohan, N. M.

2017-08-01

Ni-Ti shape memory alloys (SMAs) are intelligent alloys which demonstrate unique properties, such as shape memory effect, two-way shape memory effect, super-elasticity and vibration damping which, accompanied by good processability, excellent corrosion resistance and biocompatibility as well as fair wear resistance and cyclic stability, enabled the development of important industrial applications (such as sensors, actuators, fasteners, couplings and valves), medical applications (such as stents, bone implants, orthodontic archwires, minimal invasive surgical equipment) as well as environmental health and safety devices (anti-seismic dampers, fire safety devices). The phase transitions in Ni-Ti SMAs are strongly influenced by processing methods, chemical compositions and thermomechanical history. This paper presents a study of the effects of heat treatment on the mechanical and thermal properties of commercial Ni-Ti shape memory alloy (SMA). The experimental work involved subjecting a SMA rod to heat-treatment consisting in heating up to 500°C, 10 minutes-maintaining and water quenching. Mechanical properties were highlighted by microhardness tests while thermal characteristics were emphasized by differential scanning calorimetry (DSC). The presence of chemical composition fluctuations was checked by X-ray energy dispersive spectroscopy performed with an EDAX Bruker analyzer.

Two-way shape memory behavior of semi-crystalline elastomer under stress-free condition

NASA Astrophysics Data System (ADS)

Qian, Chen; Dong, Yubing; Zhu, Yaofeng; Fu, Yaqin

2016-08-01

Semi-crystalline shape memory polymers exhibit two-way shape memory effect (2W-SME) under constant stresses through crystallization-induced elongation upon cooling and melting-induced constriction upon heating. The applied constant stress influenced the prediction and usability of 2W-SME in practical applications without any external force. Here the reversible shape transition in EVA-shaped memory polymer was quantitative analyzed under a suitable temperature range and external stress-free condition. The fraction of reversible strain increased with increasing upper temperature (T high) within the temperature range and reached the maximum value of 13.62% at 70 °C. However, reversible strain transition was almost lost when T high exceeded 80 °C because of complete melting of crystalline scaffold, known as the latent recrystallization template. The non-isothermal annealing of EVA 2W-SMP under changing circulating temperatures was confirmed. Moreover, the orientation of crystallization was retained at high temperatures. These findings may contribute to design an appropriate shape memory protocol based on application-specific requirements.

Frequency set on systems

NASA Astrophysics Data System (ADS)

Wilby, W. A.; Brett, A. R. H.

Frequency set on techniques used in ECM applications include repeater jammers, frequency memory loops (RF and optical), coherent digital RF memories, and closed loop VCO set on systems. Closed loop frequency set on systems using analog phase and frequency locking are considered to have a number of cost and performance advantages. Their performance is discussed in terms of frequency accuracy, bandwidth, locking time, stability, and simultaneous signals. Some experimental results are presented which show typical locking performance. Future ECM systems might require a response to very short pulses. Acoustooptic and fiber-optic pulse stretching techniques can be used to meet such requirements.

A review of shape memory material’s applications in the offshore oil and gas industry

NASA Astrophysics Data System (ADS)

Patil, Devendra; Song, Gangbing

2017-09-01

The continuously increasing demand for oil and gas and the depleting number of new large reservoir discoveries have made it necessary for the oil and gas industry to investigate and design new, improved technologies that unlock new sources of energy and squeeze more from existing resources. Shape memory materials (SMM), with their remarkable properties such as the shape memory effect (SME), corrosion resistance, and superelasticity have shown great potential to meet these demands by significantly improving the functionality and durability of offshore systems. Shape memory alloy (SMA) and shape memory polymer (SMP) are two types of most commonly used SMM’s and are ideally suited for use over a range of robust engineering applications found within the oil and gas industry, such as deepwater actuators, valves, underwater connectors, seals, self-torqueing fasteners and sand management. The potential high strain and high force output of the SME of SMA can be harnessed to create a lightweight, solid state alternative to conventional hydraulic, pneumatic or motor based actuator systems. The phase transformation property enables the SMA to withstand erosive stresses, which is useful for minimizing the effect of erosion often experienced by downhole devices. The superelasticity of the SMA provides good energy dissipation, and can overcome the various defects and limitations suffered by conventional passive damping methods. The higher strain recovery during SME makes SMP ideal for developments of packers and sand management in downhole. The increasing number of SMM related research papers and patents from oil and gas industry indicate the growing research interest of the industry to implement SMM in offshore applications. This paper reviews the recent developments and applications of SMM in the offshore oil and gas industry.

Brain functional network changes following Prelimbic area inactivation in a spatial memory extinction task.

PubMed

Méndez-Couz, Marta; Conejo, Nélida M; Vallejo, Guillermo; Arias, Jorge L

2015-01-01

Several studies suggest a prefrontal cortex involvement during the acquisition and consolidation of spatial memory, suggesting an active modulating role at late stages of acquisition processes. Recently, we have reported that the prelimbic and infralimbic areas of the prefrontal cortex, among other structures, are also specifically involved in the late phases of spatial memory extinction. This study aimed to evaluate whether the inactivation of the prelimbic area of the prefrontal cortex impaired spatial memory extinction. For this purpose, male Wistar rats were implanted bilaterally with cannulae into the prelimbic region of the prefrontal cortex. Animals were trained during 5 consecutive days in a hidden platform task and tested for reference spatial memory immediately after the last training session. One day after completing the training task, bilateral infusion of the GABAA receptor agonist Muscimol was performed before the extinction protocol was carried out. Additionally, cytochrome c oxidase histochemistry was applied to map the metabolic brain activity related to the spatial memory extinction under prelimbic cortex inactivation. Results show that animals acquired the reference memory task in the water maze, and the extinction task was successfully completed without significant impairment. However, analysis of the functional brain networks involved by cytochrome oxidase activity interregional correlations showed changes in brain networks between the group treated with Muscimol as compared to the saline-treated group, supporting the involvement of the mammillary bodies at a the late stage in the memory extinction process. Copyright © 2015 Elsevier B.V. All rights reserved.

Commercial associative memory performance for applications in track-based triggers at the Large Hadron Collider

NASA Astrophysics Data System (ADS)

Webster, Jordan

2017-01-01

Dense track environments in pp collisions at the Large Hadron Collider (LHC) motivate the use of triggers with dedicated hardware for fast track reconstruction. The ATLAS Collaboration is in the process of implementing a Fast Tracker (FTK) trigger upgrade, in which Content Addressable Memories (CAMs) will be used to rapidly match hit patterns with large banks of simulated tracks. The FTK CAMs are produced primarily at the University of Pisa. However, commercial CAM technology is rapidly developing due to applications in computer networking devices. This poster presents new studies comparing FTK CAMs to cutting-edge ternary CAMs developed by Cavium. The comparison is intended to guide the design of future track-based trigger systems for the next Phase at the LHC.

Performance of Ge-Sb-Bi-Te-B Recording Media for Phase-Change Optical Disks

NASA Astrophysics Data System (ADS)

Lee, Chain-Ming; Yen, Wen-Shin; Liu, Ren-Haur; Chin, Tsung-Shune

2001-09-01

We investigated the physical properties of GeSbBiTeB materials and examined the feasibility for phase change recording. The studied compositions were Ge4Sb0.5Bi0.5Te5 and Ge2Sb1.5Bi0.5Te5 with B doping. The coexistence of Bi and B atoms into both Ge4SbTe5 and Ge2Sb2Te5 lattice maintains single fcc structure without phase separation. The Bi substitution shows benefits in decreasing crystallization temperature and activation energy, however the reflectivity is slightly reduced. 3 With small amount addition of boron about 1 at.%, the reflectivity can be increased. 2 Conventional 4-layer structure of digital versatile disk-random access memory (DVD-RAM) 2.6 GB format was used to prepare the disks for dynamic characterization and overwrite cyclability evaluations. The disk with Ge4Sb0.5Bi0.5Te5(B) recording layer shows large noise fluctuation and low overwrite erase ratio, suggesting that the crystallization speed is still insufficient. While the disk with Ge2Sb1.5Bi0.5Te5(B) recording layer shows lower writing and erasing powers, stable noise level and high overwrite erase ratio, indicating the capability for DVD-RAM applications. The effect of B doping was verified to enhance the signal amplitude and modulation.

Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma

NASA Astrophysics Data System (ADS)

Shen, Lanlan; Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Liu, Bo; Wu, Liangcai; Cheng, Yan; Feng, Songlin

2016-10-01

Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF4 is needed for high etch rate and 10% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.

Prefrontal responses to digit span memory phases in patients with post-traumatic stress disorder (PTSD): a functional near infrared spectroscopy study.

PubMed

Tian, Fenghua; Yennu, Amarnath; Smith-Osborne, Alexa; Gonzalez-Lima, F; North, Carol S; Liu, Hanli

2014-01-01

Neuroimaging studies of post-traumatic stress disorder (PTSD)-related memory impairments have consistently implicated abnormal activities in the frontal and parietal lobes. However, most studies have used block designs and could not dissociate the multiple phases of working memory. In this study, the involvement of the prefrontal cortex in working memory phases was assessed among veterans with PTSD and age-/gender-matched healthy controls. Multichannel functional near infrared spectroscopy (fNIRS) was utilized to measure prefrontal cortex hemodynamic activations during memory of neutral (i.e., not trauma-related) forward and backward digit span tasks. An event-related experimental design was utilized to dissociate the different phases (i.e., encoding, maintenance and retrieval) of working memory. The healthy controls showed robust hemodynamic activations during the encoding and retrieval processes. In contrast, the veterans with PTSD were found to have activations during the encoding process, but followed by distinct deactivations during the retrieval process. The PTSD participants, but not the controls, appeared to suppress prefrontal activity during memory retrieval. This deactivation was more pronounced in the right dorsolateral prefrontal cortex during the retrieval phase. These deactivations in PTSD patients might implicate an active inhibition of dorsolateral prefrontal neural activity during retrieval of working memory.

NiTi Alloys for Tribological Applications: The Role of In-Situ Nanotechnology

NASA Technical Reports Server (NTRS)

Dellacorte, Christopher

2016-01-01

Beginning in 2004, NASA initiated the investigation and development of, Nitinol 60, a nickel-rich and dimensionally stable version of shape memory alloy Nitinol 55, as an alternative to bearing steel. Early investigations showed it to be hard and impervious to aqueous corrosion but the fundamental reasons for these properties were unknown. Shape memory alloys made from equiatomic Ni-Ti are widely known for their unique dimensional instability behavior that can be triggered by thermal and mechanical stress. The nickel-rich alloys exhibit no such dimension change property and have high hardness but have largely been overlooked by industry and the engineering community. Though steel is the dominant material of choice for mechanical components (bearings and gears) it has intrinsic limitations related to corrosion and plastic deformation. In contrast, Ni-Ti alloys are intrinsically rustproof and can withstand high contact loads without damage (denting). Over the last decade, focused RD to exploit these alloys for new applications has revealed that in-situ nano-scale phases that form during processing are largely responsible for NiTis remarkable properties. In this presentation, the state-of-art of nickel-rich NiTi alloys will be introduced and the nanotechnology behind their intriguing behavior will be addressed. The presentation will include discussion of how NASA is adopting this new technology inside the space station water recycling system as a pathfinder for more down-to-earth tribological challenges.

PCM-Based Durable Write Cache for Fast Disk I/O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhuo; Wang, Bin; Carpenter, Patrick

2012-01-01

Flash based solid-state devices (FSSDs) have been adopted within the memory hierarchy to improve the performance of hard disk drive (HDD) based storage system. However, with the fast development of storage-class memories, new storage technologies with better performance and higher write endurance than FSSDs are emerging, e.g., phase-change memory (PCM). Understanding how to leverage these state-of-the-art storage technologies for modern computing systems is important to solve challenging data intensive computing problems. In this paper, we propose to leverage PCM for a hybrid PCM-HDD storage architecture. We identify the limitations of traditional LRU caching algorithms for PCM-based caches, and develop amore » novel hash-based write caching scheme called HALO to improve random write performance of hard disks. To address the limited durability of PCM devices and solve the degraded spatial locality in traditional wear-leveling techniques, we further propose novel PCM management algorithms that provide effective wear-leveling while maximizing access parallelism. We have evaluated this PCM-based hybrid storage architecture using applications with a diverse set of I/O access patterns. Our experimental results demonstrate that the HALO caching scheme leads to an average reduction of 36.8% in execution time compared to the LRU caching scheme, and that the SFC wear leveling extends the lifetime of PCM by a factor of 21.6.« less

Tunable ion-photon entanglement in an optical cavity.

PubMed

Stute, A; Casabone, B; Schindler, P; Monz, T; Schmidt, P O; Brandstätter, B; Northup, T E; Blatt, R

2012-05-23

Proposed quantum networks require both a quantum interface between light and matter and the coherent control of quantum states. A quantum interface can be realized by entangling the state of a single photon with the state of an atomic or solid-state quantum memory, as demonstrated in recent experiments with trapped ions, neutral atoms, atomic ensembles and nitrogen-vacancy spins. The entangling interaction couples an initial quantum memory state to two possible light-matter states, and the atomic level structure of the memory determines the available coupling paths. In previous work, the transition parameters of these paths determined the phase and amplitude of the final entangled state, unless the memory was initially prepared in a superposition state (a step that requires coherent control). Here we report fully tunable entanglement between a single (40)Ca(+) ion and the polarization state of a single photon within an optical resonator. Our method, based on a bichromatic, cavity-mediated Raman transition, allows us to select two coupling paths and adjust their relative phase and amplitude. The cavity setting enables intrinsically deterministic, high-fidelity generation of any two-qubit entangled state. This approach is applicable to a broad range of candidate systems and thus is a promising method for distributing information within quantum networks.

Phase-change materials handbook

NASA Technical Reports Server (NTRS)

Hale, D. V.; Hoover, M. J.; Oneill, M. J.

1972-01-01

Handbook describes relationship between phase-change materials and more conventional thermal control techniques and discusses materials' space and terrestrial applications. Material properties of most promising phase-change materials and purposes and uses of metallic filler materials in phase-change material composites are provided.

My Thirty-Four Years as a School Governor, with Reflections on Some Aspects of Curriculum Change

ERIC Educational Resources Information Center

Harris, Richard

2015-01-01

This reflection does not pretend to be a scientific survey of curriculum trends but is, as the title suggests, a personal reminiscence of governorship across different phases of education, with snippets about the curriculum that my memory recalls.

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

NASA Astrophysics Data System (ADS)

Berthier, R.; Bernier, N.; Cooper, D.; Sabbione, C.; Hippert, F.; Noé, P.

2017-09-01

The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells.

Molecular mechanisms of memory in imprinting.

PubMed

Solomonia, Revaz O; McCabe, Brian J

2015-03-01

Converging evidence implicates the intermediate and medial mesopallium (IMM) of the domestic chick forebrain in memory for a visual imprinting stimulus. During and after imprinting training, neuronal responsiveness in the IMM to the familiar stimulus exhibits a distinct temporal profile, suggesting several memory phases. We discuss the temporal progression of learning-related biochemical changes in the IMM, relative to the start of this electrophysiological profile. c-fos gene expression increases <15 min after training onset, followed by a learning-related increase in Fos expression, in neurons immunopositive for GABA, taurine and parvalbumin (not calbindin). Approximately simultaneously or shortly after, there are increases in phosphorylation level of glutamate (AMPA) receptor subunits and in releasable neurotransmitter pools of GABA and taurine. Later, the mean area of spine synapse post-synaptic densities, N-methyl-D-aspartate receptor number and phosphorylation level of further synaptic proteins are elevated. After ∼ 15 h, learning-related changes in amounts of several synaptic proteins are observed. The results indicate progression from transient/labile to trophic synaptic modification, culminating in stable recognition memory. Crown Copyright © 2014. Published by Elsevier Ltd. All rights reserved.

Molecular mechanisms of memory in imprinting

PubMed Central

Solomonia, Revaz O.; McCabe, Brian J.

2015-01-01

Converging evidence implicates the intermediate and medial mesopallium (IMM) of the domestic chick forebrain in memory for a visual imprinting stimulus. During and after imprinting training, neuronal responsiveness in the IMM to the familiar stimulus exhibits a distinct temporal profile, suggesting several memory phases. We discuss the temporal progression of learning-related biochemical changes in the IMM, relative to the start of this electrophysiological profile. c-fos gene expression increases <15 min after training onset, followed by a learning-related increase in Fos expression, in neurons immunopositive for GABA, taurine and parvalbumin (not calbindin). Approximately simultaneously or shortly after, there are increases in phosphorylation level of glutamate (AMPA) receptor subunits and in releasable neurotransmitter pools of GABA and taurine. Later, the mean area of spine synapse post-synaptic densities, N-methyl-d-aspartate receptor number and phosphorylation level of further synaptic proteins are elevated. After ∼15 h, learning-related changes in amounts of several synaptic proteins are observed. The results indicate progression from transient/labile to trophic synaptic modification, culminating in stable recognition memory. PMID:25280906

FXR1P Limits Long-Term Memory, Long-Lasting Synaptic Potentiation, and de novo GluA2 Translation

PubMed Central

Jones, Emma V.; Altimimi, Haider F.; Farmer, W. Todd; Gandin, Valentina; Hanna, Edith; Zong, Ruiting; Barbon, Alessandro; Nelson, David L.; Topisirovic, Ivan; Rochford, Joseph; Stellwagen, David; Béïque, Jean-Claude; Murai, Keith K.

2014-01-01

SUMMARY Translational control of mRNAs allows for rapid and selective changes in synaptic protein expression, changes that are required for long-lasting plasticity and memory formation in the brain. Fragile X Related Protein 1 (FXR1P) is an RNA-binding protein that controls mRNA translation in non-neuronal cells and co-localizes with translational machinery in neurons. However, its neuronal mRNA targets and role in the brain are unknown. Here, we demonstrate that removal of FXR1P from the forebrain of postnatal mice selectively enhances long-term storage of spatial memories, hippocampal late-phase LTP (L-LTP) and de novo GluA2 synthesis. Furthermore, FXR1P binds specifically to the 5’UTR of GluA2 mRNA to repress translation and limit the amount of GluA2 incorporated at potentiated synapses. This study uncovers a new mechanism for regulating long-lasting synaptic plasticity and spatial memory formation and reveals an unexpected divergent role of FXR1P among Fragile X proteins in brain plasticity. PMID:25456134

Release mechanism utilizing shape memory polymer material

DOEpatents

Lee, Abraham P.; Northrup, M. Allen; Ciarlo, Dino R.; Krulevitch, Peter A.; Benett, William J.

2000-01-01

Microfabricated therapeutic actuators are fabricated using a shape memory polymer (SMP), a polyurethane-based material that undergoes a phase transformation at a specified temperature (Tg). At a temperature above temperature Tg material is soft and can be easily reshaped into another configuration. As the temperature is lowered below temperature Tg the new shape is fixed and locked in as long as the material stays below temperature Tg. Upon reheating the material to a temperature above Tg, the material will return to its original shape. By the use of such SMP material, SMP microtubing can be used as a release actuator for the delivery of embolic coils through catheters into aneurysms, for example. The microtubing can be manufactured in various sizes and the phase change temperature Tg is determinate for an intended temperature target and intended use.

Subjective Learning Discounts Test Type: Evidence from an Associative Learning and Transfer Task

PubMed Central

Touron, Dayna R.; Hertzog, Christopher; Speagle, James Z.

2011-01-01

We evaluated the extent to which memory test format and test transfer influence the dynamics of metacognitive judgments. Participants completed 2 study-test phases for paired-associates, with or without transferring test type, in one of four conditions: (1) recognition then recall, (2) recall then recognition, (3) recognition throughout, or (4) recall throughout. Global judgments were made pre-study, post-study, and post-test for each phase; judgments of learning (JOLs) following item study were also collected. Results suggest that metacognitive judgment accuracy varies substantially by memory test type. Whereas underconfidence in JOLs and global predictions increases with recall practice (Koriat’s underconfidence-with-practice effect), underconfidence decreases with recognition practice. Moreover, performance changes when transferring test type were not fully anticipated by pre-test judgments. PMID:20178957

Sequence memory based on coherent spin-interaction neural networks.

PubMed

Xia, Min; Wong, W K; Wang, Zhijie

2014-12-01

Sequence information processing, for instance, the sequence memory, plays an important role on many functions of brain. In the workings of the human brain, the steady-state period is alterable. However, in the existing sequence memory models using heteroassociations, the steady-state period cannot be changed in the sequence recall. In this work, a novel neural network model for sequence memory with controllable steady-state period based on coherent spininteraction is proposed. In the proposed model, neurons fire collectively in a phase-coherent manner, which lets a neuron group respond differently to different patterns and also lets different neuron groups respond differently to one pattern. The simulation results demonstrating the performance of the sequence memory are presented. By introducing a new coherent spin-interaction sequence memory model, the steady-state period can be controlled by dimension parameters and the overlap between the input pattern and the stored patterns. The sequence storage capacity is enlarged by coherent spin interaction compared with the existing sequence memory models. Furthermore, the sequence storage capacity has an exponential relationship to the dimension of the neural network.

Superhydrophobic Surface With Shape Memory Micro/Nanostructure and Its Application in Rewritable Chip for Droplet Storage.

PubMed

Lv, Tong; Cheng, Zhongjun; Zhang, Dongjie; Zhang, Enshuang; Zhao, Qianlong; Liu, Yuyan; Jiang, Lei

2016-09-21

Recently, superhydrophobic surfaces with tunable wettability have aroused much attention. Noticeably, almost all present smart performances rely on the variation of surface chemistry on static micro/nanostructure, to obtain a surface with dynamically tunable micro/nanostructure, especially that can memorize and keep different micro/nanostructures and related wettabilities, is still a challenge. Herein, by creating micro/nanostructured arrays on shape memory polymer, a superhydrophobic surface that has shape memory ability in changing and recovering its hierarchical structures and related wettabilities was reported. Meanwhile, the surface was successfully used in the rewritable functional chip for droplet storage by designing microstructure-dependent patterns, which breaks through current research that structure patterns cannot be reprogrammed. This article advances a superhydrophobic surface with shape memory hierarchical structure and the application in rewritable functional chip, which could start some fresh ideas for the development of smart superhydrophobic surface.

Negative effects of item repetition on source memory.

PubMed

Kim, Kyungmi; Yi, Do-Joon; Raye, Carol L; Johnson, Marcia K

2012-08-01

In the present study, we explored how item repetition affects source memory for new item-feature associations (picture-location or picture-color). We presented line drawings varying numbers of times in Phase 1. In Phase 2, each drawing was presented once with a critical new feature. In Phase 3, we tested memory for the new source feature of each item from Phase 2. Experiments 1 and 2 demonstrated and replicated the negative effects of item repetition on incidental source memory. Prior item repetition also had a negative effect on source memory when different source dimensions were used in Phases 1 and 2 (Experiment 3) and when participants were explicitly instructed to learn source information in Phase 2 (Experiments 4 and 5). Importantly, when the order between Phases 1 and 2 was reversed, such that item repetition occurred after the encoding of critical item-source combinations, item repetition no longer affected source memory (Experiment 6). Overall, our findings did not support predictions based on item predifferentiation, within-dimension source interference, or general interference from multiple traces of an item. Rather, the findings were consistent with the idea that prior item repetition reduces attention to subsequent presentations of the item, decreasing the likelihood that critical item-source associations will be encoded.

Dorsal hippocampal NMDA receptors mediate the interactive effects of arachidonylcyclopropylamide and MDMA/ecstasy on memory retrieval in rats.

PubMed

Ghaderi, Marzieh; Rezayof, Ameneh; Vousooghi, Nasim; Zarrindast, Mohammad-Reza

2016-04-03

A combination of cannabis and ecstasy may change the cognitive functions more than either drug alone. The present study was designed to investigate the possible involvement of dorsal hippocampal NMDA receptors in the interactive effects of arachidonylcyclopropylamide (ACPA) and ecstasy/MDMA on memory retrieval. Adult male Wistar rats were cannulated into the CA1 regions of the dorsal hippocampus (intra-CA1) and memory retrieval was examined using the step-through type of passive avoidance task. Intra-CA1 microinjection of a selective CB1 receptor agonist, ACPA (0.5-4ng/rat) immediately before the testing phase (pre-test), but not after the training phase (post-training), impaired memory retrieval. In addition, pre-test intra-CA1 microinjection of MDMA (0.5-1μg/rat) dose-dependently decreased step-through latency, indicating an amnesic effect of the drug by itself. Interestingly, pre-test microinjection of a higher dose of MDMA into the CA1 regions significantly improved ACPA-induced memory impairment. Moreover, pre-test intra-CA1 microinjection of a selective NMDA receptor antagonist, D-AP5 (1 and 2μg/rat) inhibited the reversal effect of MDMA on the impairment of memory retrieval induced by ACPA. Pre-test intra-CA1 microinjection of the same doses of D-AP5 had no effect on memory retrieval alone. These findings suggest that ACPA or MDMA consumption can induce memory retrieval impairment, while their co-administration improves this amnesic effect through interacting with hippocampal glutamatergic-NMDA receptor mechanism. Thus, it seems that the tendency to abuse cannabis with ecstasy may be for avoiding cognitive dysfunction. Copyright © 2015. Published by Elsevier Inc.

Auditory closed-loop stimulation of the sleep slow oscillation enhances memory.

PubMed

Ngo, Hong-Viet V; Martinetz, Thomas; Born, Jan; Mölle, Matthias

2013-05-08

Brain rhythms regulate information processing in different states to enable learning and memory formation. The <1 Hz sleep slow oscillation hallmarks slow-wave sleep and is critical to memory consolidation. Here we show in sleeping humans that auditory stimulation in phase with the ongoing rhythmic occurrence of slow oscillation up states profoundly enhances the slow oscillation rhythm, phase-coupled spindle activity, and, consequently, the consolidation of declarative memory. Stimulation out of phase with the ongoing slow oscillation rhythm remained ineffective. Closed-loop in-phase stimulation provides a straight-forward tool to enhance sleep rhythms and their functional efficacy. Copyright © 2013 Elsevier Inc. All rights reserved.

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David

2010-09-01

Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{submore » 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.« less

Unveiling the Switching Riddle of Silver Tetracyanoquinodimethane Towards Novel Planar Single-Crystalline Electrochemical Metallization Memories.

PubMed

Yang, Fangxu; Zhao, Qiang; Xu, Chunhui; Zou, Ye; Dong, Huanli; Zheng, Yonggang; Hu, Wenping

2016-09-01

The switching riddle of AgTCNQ is shown to be caused by the solid electrolyte mechanism. Both factors of bulk phase change and contact issue play key roles in the efficient work of the devices. An effective strategy is developed to locate the formation/disruption of Ag conductive filaments using the planar asymmetric configuration of Au/AgTCNQ/AlOx /Al. These novel electrochemical metallization memories demonstrate many promising properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A cluster randomized controlled platform trial comparing group MEmory specificity training (MEST) to group psychoeducation and supportive counselling (PSC) in the treatment of recurrent depression.

PubMed

Werner-Seidler, Aliza; Hitchcock, Caitlin; Bevan, Anna; McKinnon, Anna; Gillard, Julia; Dahm, Theresa; Chadwick, Isobel; Panesar, Inderpal; Breakwell, Lauren; Mueller, Viola; Rodrigues, Evangeline; Rees, Catrin; Gormley, Siobhan; Schweizer, Susanne; Watson, Peter; Raes, Filip; Jobson, Laura; Dalgleish, Tim

2018-06-01

Impaired ability to recall specific autobiographical memories is characteristic of depression, which when reversed, may have therapeutic benefits. This cluster-randomized controlled pilot trial investigated efficacy and aspects of acceptability, and feasibility of MEmory Specificity Training (MEST) relative to Psychoeducation and Supportive Counselling (PSC) for Major Depressive Disorder (N = 62). A key aim of this study was to determine a range of effect size estimates to inform a later phase trial. Assessments were completed at baseline, post-treatment and 3-month follow-up. The cognitive process outcome was memory specificity. The primary clinical outcome was symptoms on the Beck Depression Inventory-II at 3-month follow-up. The MEST group demonstrated greater improvement in memory specificity relative to PSC at post-intervention (d = 0.88) and follow-up (d = 0.74), relative to PSC. Both groups experienced a reduction in depressive symptoms at 3-month follow-up (d = 0.67). However, there was no support for a greater improvement in depressive symptoms at 3 months following MEST relative to PSC (d = -0.04). Although MEST generated changes on memory specificity and improved depressive symptoms, results provide no indication that MEST is superior to PSC in the resolution of self-reported depressive symptoms. Implications for later-phase definitive trials of MEST are discussed. Copyright © 2018 The Authors. Published by Elsevier Ltd.. All rights reserved.

Chemically programmed ink-jet printed resistive WORM memory array and readout circuit

NASA Astrophysics Data System (ADS)

Andersson, H.; Manuilskiy, A.; Sidén, J.; Gao, J.; Hummelgård, M.; Kunninmel, G. V.; Nilsson, H.-E.

2014-09-01

In this paper an ink-jet printed write once read many (WORM) resistive memory fabricated on paper substrate is presented. The memory elements are programmed for different resistance states by printing triethylene glycol monoethyl ether on the substrate before the actual memory element is printed using silver nano particle ink. The resistance is thus able to be set to a broad range of values without changing the geometry of the elements. A memory card consisting of 16 elements is manufactured for which the elements are each programmed to one of four defined logic levels, providing a total of 4294 967 296 unique possible combinations. Using a readout circuit, originally developed for resistive sensors to avoid crosstalk between elements, a memory card reader is manufactured that is able to read the values of the memory card and transfer the data to a PC. Such printed memory cards can be used in various applications.

Optimization of a PCRAM Chip for high-speed read and highly reliable reset operations

NASA Astrophysics Data System (ADS)

Li, Xiaoyun; Chen, Houpeng; Li, Xi; Wang, Qian; Fan, Xi; Hu, Jiajun; Lei, Yu; Zhang, Qi; Tian, Zhen; Song, Zhitang

2016-10-01

The widely used traditional Flash memory suffers from its performance limits such as its serious crosstalk problems, and increasing complexity of floating gate scaling. Phase change random access memory (PCRAM) becomes one of the most potential nonvolatile memories among the new memory techniques. In this paper, a 1M-bit PCRAM chip is designed based on the SMIC 40nm CMOS technology. Focusing on the read and write performance, two new circuits with high-speed read operation and highly reliable reset operation are proposed. The high-speed read circuit effectively reduces the reading time from 74ns to 40ns. The double-mode reset circuit improves the chip yield. This 1M-bit PCRAM chip has been simulated on cadence. After layout design is completed, the chip will be taped out for post-test.

New approaches to addiction treatment based on learning and memory.

PubMed

Kiefer, Falk; Dinter, Christina

2013-01-01

Preclinical studies suggest that physiological learning processes are similar to changes observed in addicts at the molecular, neuronal, and structural levels. Based on the importance of classical and instrumental conditioning in the development and maintenance of addictive disorders, many have suggested cue-exposure-based extinction training of conditioned, drug-related responses as a potential new treatment of addiction. It may also be possible to facilitate this extinction training with pharmacological compounds that strengthen memory consolidation during cue exposure. Another potential therapeutic intervention would be based on the so-called reconsolidation theory. According to this hypothesis, already-consolidated memories return to a labile state when reactivated, allowing them to undergo another phase of consolidation-reconsolidation, which can be pharmacologically manipulated. These approaches suggest that the extinction of drug-related memories may represent a viable treatment strategy in the future treatment of addiction.

Non-von Neumann computing using plasmon particles interacting with phase change materials (Conference Presentation)

NASA Astrophysics Data System (ADS)

Saiki, Toshiharu

2016-09-01

Control of localized surface plasmon resonance (LSPR) excited on metal nanostructures has drawn attention for applications in dynamic switching of plasmonic devices. As a reversible active media for LSPR control, chalcogenide phase-change materials (PCMs) such as GeSbTe (GST) are promising for high-contrast robust plasmonic switching. Owing to the plasticity and the threshold behavior during both amorphization and crystallization of PCMs, PCM-based LSPR switching elements possess a dual functionality of memory and processing. Integration of LSPR switching elements so that they interact with each other will allow us to build non-von-Neumann computing devices. As a specific demonstration, we discuss the implementation of a cellular automata (CA) algorithm into interacting LSPR switching elements. In the model we propose, PCM cells, which can be in one of two states (amorphous and crystalline), interact with each other by being linked by a AuNR, whose LSPR peak wavelength is determined by the phase of PCM cells on the both sides. The CA program proceeds by irradiating with a light pulse train. The local rule set is defined by the temperature rise in the PCM cells induced by the LSPR of the AuNR, which is subject to the intensity and wavelength of the irradiating pulse. We also investigate the possibility of solving a problem analogous to the spin-glass problem by using a coupled dipole system, in which the individual coupling strengths can be modified to optimize the system so that the exact solution can be easily reached. For this algorithm, we propose an implementation based on an idea that coupled plasmon particles can create long-range spatial correlations, and the interaction of this with a phase-change material allows the coupling strength to be modified.

Swiftly moving focus points and forming shapes through the scattering media

NASA Astrophysics Data System (ADS)

Tran, Vinh; Sahoo, Sujit Kumar; Tang, Dongliang; Dang, Cuong

2018-02-01

Propagation of light through scattering media such as ground glass or biological tissue limits the quality and intensity of focusing point. Wave front shaping technique which uses spatial light modulator (SLM) devices to reshape the field profile of incoming light, is considered as one of the most effective and convenient methods. Advanced biomedical or manufacturing applications require drawing various contours or shapes quickly and precisely. However, creating each shape behind the scattering medium needs different phase profiles, which are time consuming to optimize or measure. Here, we demonstrate a technique to draw various shapes or contours behind the scattering medium by swiftly moving the focus point without any mechanical movements. Our technique relies on the existence of speckle correlation property in scattering media, also known as optical memory effect. In our procedure, we first modulate the phase-only SLM to create the focus point on the other side of scattering medium. Then, we digitally shift the preoptimized phase profile on the SLM and ramp it to tilt the beam accordingly. Now, the incoming beam with identical phase profile shines on the same scattering region at a tilted angle to regenerate the focus point at the desired position due to memory effect. Moreover, with linear combination of different field patterns, we can generate a single phase profile on SLM to produce two, three or more focus points simultaneously on the other side of a turbid medium. Our method could provide a useful tool for prominent applications such as opto-genetic excitation, minimally invasive laser surgery and other related fields.

pH Memory Effects of Tunable Block Copolymer Photonic Gels and Their Applications

NASA Astrophysics Data System (ADS)

Kang, Youngjong; Thomas, Edwin L.

2007-03-01

Materials with hysteresis, showing a bistable state to the external stimuli, have been widely investigated due to their potential applications. For example, they could be used as memory devices or optical switches when they have magnetic or optical hysteresis response to the external stimuli. Here we report pH tunable photonic gels which are spontaneously assembled from block copolymers. The general idea of this research is based on the selective swelling of block copolymer lamellar mesogels, where the solubility of one block is responsive to the change of pH. In this system, the domain spacing of the lamellar is varied with the extent of swelling. As a model system, we used protonated polystyrene-b-poly(2-vinly pyridine) (PS-b-P2VP) block copolymers forming lamellar structures. The photonic gel films prepared from protonated PS-b-P2VP show a strong reflectance in aqueous solution and the band position was varied with pH. Interestingly, a very strong optical hysteresis was observed while the reflection band of photonic gels was tuned by changing pH. We anticipate that pH tunable photonic gels with hysteresis can be applicable to novel applications such as a component of memory devices, photonic switches or drug delivery vehicles.

The Sensory Nature of Episodic Memory: Sensory Priming Effects Due to Memory Trace Activation

ERIC Educational Resources Information Center

Brunel, Lionel; Labeye, Elodie; Lesourd, Mathieu; Versace, Remy

2009-01-01

The aim of this study was to provide evidence that memory and perceptual processing are underpinned by the same mechanisms. Specifically, the authors conducted 3 experiments that emphasized the sensory aspect of memory traces. They examined their predictions with a short-term priming paradigm based on 2 distinct phases: a learning phase consisting…

Radiation-hardened-by-design clocking circuits in 0.13-μm CMOS technology

NASA Astrophysics Data System (ADS)

You, Y.; Huang, D.; Chen, J.; Gong, D.; Liu, T.; Ye, J.

2014-01-01

We present a single-event-hardened phase-locked loop for frequency generation applications and a digital delay-locked loop for DDR2 memory interface applications. The PLL covers a 12.5 MHz to 500 MHz frequency range with an RMS Jitter (RJ) of 4.70-pS. The DLL operates at 267 MHz and has a phase resolution of 60-pS. Designed in 0.13-μm CMOS technology, the PLL and the DLL are hardened against SEE for charge injection of 250 fC. The PLL and the DLL consume 17 mW and 22 mW of power under a 1.5 V power supply, respectively.

Spectral multiplexing for scalable quantum photonics using an atomic frequency comb quantum memory and feed-forward control.

PubMed

Sinclair, Neil; Saglamyurek, Erhan; Mallahzadeh, Hassan; Slater, Joshua A; George, Mathew; Ricken, Raimund; Hedges, Morgan P; Oblak, Daniel; Simon, Christoph; Sohler, Wolfgang; Tittel, Wolfgang

2014-08-01

Future multiphoton applications of quantum optics and quantum information science require quantum memories that simultaneously store many photon states, each encoded into a different optical mode, and enable one to select the mapping between any input and a specific retrieved mode during storage. Here we show, with the example of a quantum repeater, how to employ spectrally multiplexed states and memories with fixed storage times that allow such mapping between spectral modes. Furthermore, using a Ti:Tm:LiNbO_{3} waveguide cooled to 3 K, a phase modulator, and a spectral filter, we demonstrate storage followed by the required feed-forward-controlled frequency manipulation with time-bin qubits encoded into up to 26 multiplexed spectral modes and 97% fidelity.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

PubMed

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-11-22

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

PubMed Central

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-01-01

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

Context odor presentation during sleep enhances memory in honeybees.

PubMed

Zwaka, Hanna; Bartels, Ruth; Gora, Jacob; Franck, Vivien; Culo, Ana; Götsch, Moritz; Menzel, Randolf

2015-11-02

Sleep plays an important role in stabilizing new memory traces after learning [1-3]. Here we investigate whether sleep's role in memory processing is similar in evolutionarily distant species and demonstrate that a context trigger during deep-sleep phases improves memory in invertebrates, as it does in humans. We show that in honeybees (Apis mellifera), exposure to an odor during deep sleep that has been present during learning improves memory performance the following day. Presentation of the context odor during wake phases or novel odors during sleep does not enhance memory. In humans, memory consolidation can be triggered by presentation of a context odor during slow-wave sleep that had been present during learning [3-5]. Our results reveal that deep-sleep phases in honeybees have the potential to prompt memory consolidation, just as they do in humans. This study provides strong evidence for a conserved role of sleep-and how it affects memory processes-from insects to mammals. Copyright © 2015 Elsevier Ltd. All rights reserved.

Controllable 0–π Josephson junctions containing a ferromagnetic spin valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gingrich, E. C.; Niedzielski, Bethany M.; Glick, Joseph A.

Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a ferromagnetic material can exhibit an intrinsic phase shift of π in its ground state for certain thicknesses of the material. Such ‘π-junctions’ were first realized experimentally in 2001, and have been proposed as circuit elements for both high-speed classical superconducting computing and for quantum computing. Here we demonstrate experimentally that the phase state of a Josephson junction containing two ferromagnetic layers can be toggled between 0 and pi by changing the relativemore » orientation of the two magnetizations. These controllable 0–π junctions have immediate applications in cryogenic memory, where they serve as a necessary component to an ultralow power superconducting computer. Such a fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. Here, phase-controllable junctions also open up new possibilities for superconducting circuit elements such as superconducting ‘programmable logic’, where they could function in superconducting analogues to field-programmable gate arrays.« less

Controllable 0–π Josephson junctions containing a ferromagnetic spin valve

DOE PAGES

Gingrich, E. C.; Niedzielski, Bethany M.; Glick, Joseph A.; ...

2016-03-14

Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a ferromagnetic material can exhibit an intrinsic phase shift of π in its ground state for certain thicknesses of the material. Such ‘π-junctions’ were first realized experimentally in 2001, and have been proposed as circuit elements for both high-speed classical superconducting computing and for quantum computing. Here we demonstrate experimentally that the phase state of a Josephson junction containing two ferromagnetic layers can be toggled between 0 and pi by changing the relativemore » orientation of the two magnetizations. These controllable 0–π junctions have immediate applications in cryogenic memory, where they serve as a necessary component to an ultralow power superconducting computer. Such a fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. Here, phase-controllable junctions also open up new possibilities for superconducting circuit elements such as superconducting ‘programmable logic’, where they could function in superconducting analogues to field-programmable gate arrays.« less

Memory retrieval and the passage of time: from reconsolidation and strengthening to extinction

PubMed Central

Inda, Maria Carmen; Muravieva, Elizaveta V.; Alberini, Cristina M.

2011-01-01

An established memory can be made transiently labile if retrieved or reactivated. Over time, it becomes again resistant to disruption and this process that renders the memory stable is termed reconsolidation. The reasons why a memory becomes labile after retrieval and reconsolidates still remains debated. Here, using inhibitory avoidance (IA) learning in rats, we provide evidence that retrievals of a young memory, which are accompanied by its reconsolidation, result in memory strengthening and contribute to its overall consolidation. This function associated to reconsolidation is temporally limited. With the passage of time, the stored memory undergoes important changes, as revealed by the behavioral outcomes of its retrieval. Over time, without explicit retrievals, memory first strengthens and becomes refractory to both retrieval-dependent interference and strengthening. At later times, the same retrievals that lead to reconsolidation of a young memory extinguish an older memory. We conclude that the storage of information is very dynamic and that its temporal evolution regulates behavioral outcomes. These results are important for potential clinical applications. PMID:21289172

Using Latent Class Modeling to Detect Bimodality in Spacing Effect Data

ERIC Educational Resources Information Center

Verkoeijen, Peter P. J. L.; Bouwmeester, Samantha

2008-01-01

A recently proposed theory of the spacing effect [Raaijmakers, J. G. W. (2003). Spacing and repetition effects in human memory: application of the SAM model. "Cognitive Science," 27, 431-452.] suggests that the spacing effect is conditional on study-phase retrieval leading to two groups of students showing different magnitudes of the spacing…

Quantum state detection and state preparation based on cavity-enhanced nonlinear interaction of atoms with single photon

NASA Astrophysics Data System (ADS)

Hosseini, Mahdi

Our ability to engineer quantum states of light and matter has significantly advanced over the past two decades, resulting in the production of both Gaussian and non-Gaussian optical states. The resulting tailored quantum states enable quantum technologies such as quantum optical communication, quantum sensing as well as quantum photonic computation. The strong nonlinear light-atom interaction is the key to deterministic quantum state preparation and quantum photonic processing. One route to enhancing the usually weak nonlinear light-atom interactions is to approach the regime of cavity quantum electrodynamics (cQED) interaction by means of high finesse optical resonators. I present results from the MIT experiment of large conditional cross-phase modulation between a signal photon, stored inside an atomic quantum memory, and a control photon that traverses a high-finesse optical cavity containing the atomic memory. I also present a scheme to probabilistically change the amplitude and phase of a signal photon qubit to, in principle, arbitrary values by postselection on a control photon that has interacted with that state. Notably, small changes of the control photon polarization measurement basis by few degrees can substantially change the amplitude and phase of the signal state. Finally, I present our ongoing effort at Purdue to realize similar peculiar quantum phenomena at the single photon level on chip scale photonic systems.

Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate

NASA Astrophysics Data System (ADS)

Yoon, Jong Moon; Shin, Dong Ok; Yin, You; Seo, Hyeon Kook; Kim, Daewoon; In Kim, Yong; Jin, Jung Ho; Kim, Yong Tae; Bae, Byeong-Soo; Ouk Kim, Sang; Lee, Jeong Yong

2012-06-01

Mushroom-shaped phase change memory (PCM) consisting of a Cr/In3Sb1Te2 (IST)/TiN (bottom electrode) nanoarray was fabricated via block copolymer lithography and single-step dry etching with a gas mixture of Ar/Cl2. The process was performed on a high performance transparent glass-fabric reinforced composite film (GFR Hybrimer) suitable for use as a novel substrate for flexible devices. The use of GFR Hybrimer with low thermal expansion and flat surfaces enabled successful nanoscale patterning of functional phase change materials on flexible substrates. Block copolymer lithography employing asymmetrical block copolymer blends with hexagonal cylindrical self-assembled morphologies resulted in the creation of hexagonal nanoscale PCM cell arrays with an areal density of approximately 176 Gb/in2.

Shape Morphing Adaptive Radiator Technology (SMART) for Variable Heat Rejection

NASA Technical Reports Server (NTRS)

Erickson, Lisa

2016-01-01

The proposed technology leverages the temperature dependent phase change of shape memory alloys (SMAs) to drive the shape of a flexible radiator panel. The opening/closing of the radiator panel, as a function of temperature, passively adapts the radiator's rate of heat rejection in response to a vehicle's needs.

Different Phases of Long-Term Memory Require Distinct Temporal Patterns of PKA Activity after Single-Trial Classical Conditioning

ERIC Educational Resources Information Center

Michel, Maximilian; Kemenes, Ildiko; Muller, Uli; Kemenes, Gyorgy

2008-01-01

The cAMP-dependent protein kinase (PKA) is known to play a critical role in both transcription-independent short-term or intermediate-term memory and transcription-dependent long-term memory (LTM). Although distinct phases of LTM already have been demonstrated in some systems, it is not known whether these phases require distinct temporal patterns…

Age Is Associated with Reduced Sharp-Wave Ripple Frequency and Altered Patterns of Neuronal Variability.

PubMed

Wiegand, Jean-Paul L; Gray, Daniel T; Schimanski, Lesley A; Lipa, Peter; Barnes, C A; Cowen, Stephen L

2016-05-18

Spatial and episodic memory performance declines with age, and the neural basis for this decline is not well understood. Sharp-wave ripples are brief (∼70 ms) high-frequency oscillatory events generated in the hippocampus and are associated with the consolidation of spatial memories. Given the connection between ripple oscillations and memory consolidation, we investigated whether the structure of ripple oscillations and ripple-triggered patterns of single-unit activity are altered in aged rats. Local field and single-unit activity surrounding sharp-wave ripple events were examined in the CA1 region of the hippocampus of old (n = 5) and young (n = 6) F344 rats during periods of rest preceding and following performance on a place-dependent eyeblink-conditioning task. Neural responses in aged rats differed from responses in young rats in several ways. First, compared with young rats, the rate of ripple occurrence (ripple density) is reduced in aged rats during postbehavior rest. Second, mean ripple frequency during prebehavior and postbehavior rest is lower in aged animals (aged: 132 Hz; young: 146 Hz). Third, single neurons in aged animals responded more consistently from ripple to ripple. Fourth, variability in interspike intervals was greater in aged rats. Finally, neurons were tuned to a narrower range of phases of the ripple oscillation relative to young animals. Together, these results suggest that the CA1 network in aged animals has a reduced "vocabulary" of available representational states. The hippocampus is a structure that is critical for the formation of episodic memories. Sharp-wave ripple events generated in the hippocampus have been implicated in memory consolidation processes critical to memory stabilization. We examine here whether these ripple oscillations are altered over the course of the life span, which could contribute to hippocampus-dependent memory deficits that occur during aging. This experiment used young and aged memory-impaired rats to examine age-related changes in ripple architecture, ripple-triggered spike variance, and spike-phase coherence. We found that there are, indeed, significant changes in characteristics of ripples in older animals that could impact consolidation processes and memory stabilization in the aged brain. Copyright © 2016 the authors 0270-6474/16/365650-11$15.00/0.

General intelligence predicts memory change across sleep.

PubMed

Fenn, Kimberly M; Hambrick, David Z

2015-06-01

Psychometric intelligence (g) is often conceptualized as the capability for online information processing but it is also possible that intelligence may be related to offline processing of information. Here, we investigated the relationship between psychometric g and sleep-dependent memory consolidation. Participants studied paired-associates and were tested after a 12-hour retention interval that consisted entirely of wake or included a regular sleep phase. We calculated the number of word-pairs that were gained and lost across the retention interval. In a separate session, participants completed a battery of cognitive ability tests to assess g. In the wake group, g was not correlated with either memory gain or memory loss. In the sleep group, we found that g correlated positively with memory gain and negatively with memory loss. Participants with a higher level of general intelligence showed more memory gain and less memory loss across sleep. Importantly, the correlation between g and memory loss was significantly stronger in the sleep condition than in the wake condition, suggesting that the relationship between g and memory loss across time is specific to time intervals that include sleep. The present research suggests that g not only reflects the capability for online cognitive processing, but also reflects capability for offline processes that operate during sleep.

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subedi, Alaska; Siegrist, Theo; Singh, David J.

Ge 2Sb 2Te 5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strongmore » competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO 3, BiFeO 3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. As a result, this different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.« less

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

DOE PAGES

Subedi, Alaska; Siegrist, Theo; Singh, David J.; ...

2016-05-19

Ge 2Sb 2Te 5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strongmore » competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO 3, BiFeO 3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. As a result, this different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.« less

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials.

PubMed

Mukhopadhyay, Saikat; Sun, Jifeng; Subedi, Alaska; Siegrist, Theo; Singh, David J

2016-05-19

Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. This different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.

Amyloid-β, anxiety, and cognitive decline in preclinical Alzheimer disease: a multicenter, prospective cohort study.

PubMed

Pietrzak, Robert H; Lim, Yen Ying; Neumeister, Alexander; Ames, David; Ellis, Kathryn A; Harrington, Karra; Lautenschlager, Nicola T; Restrepo, Carolina; Martins, Ralph N; Masters, Colin L; Villemagne, Victor L; Rowe, Christopher C; Maruff, Paul

2015-03-01

Alzheimer disease (AD) is now known to have a long preclinical phase in which pathophysiologic processes develop many years, even decades, before the onset of clinical symptoms. Although the presence of abnormal levels of amyloid-β (Aβ) is associated with higher rates of progression to clinically classified mild cognitive impairment or dementia, little research has evaluated potentially modifiable moderators of Aβ-related cognitive decline, such as anxiety and depressive symptoms. To evaluate the association between Aβ status and cognitive changes, and the role of anxiety and depressive symptoms in moderating Aβ-related cognitive changes in the preclinical phase of AD. In this multicenter, prospective cohort study with baseline and 18-, 36-, and 54-month follow-up assessments, we studied 333 healthy, older adults at hospital-based research clinics. Carbon 11-labeled Pittsburgh Compound B (PiB)-, florbetapir F 18-, or flutemetamol F 18-derived measures of Aβ, Hospital Anxiety and Depression Scale scores, and comprehensive neuropsychological evaluation that yielded measures of global cognition, verbal memory, visual memory, attention, language, executive function, and visuospatial ability. A positive Aβ (Aβ+) status at baseline was associated with a significant decline in global cognition, verbal memory, language, and executive function, and elevated anxiety symptoms moderated these associations. Compared with the Aβ+, low-anxiety group, slopes of cognitive decline were significantly more pronounced in the Aβ+, high-anxiety group, with Cohen d values of 0.78 (95% CI, 0.33-1.23) for global cognition, 0.54 (95% CI, 0.10-0.98) for verbal memory, 0.51 (95% CI, 0.07-0.96) for language, and 0.39 (95% CI, 0.05-0.83) for executive function. These effects were independent of age, educational level, IQ, APOE genotype, subjective memory complaints, vascular risk factors, and depressive symptoms; furthermore, depressive symptoms and subjective memory complaints did not moderate the association between Aβ and cognitive decline. These results provide additional support for the deleterious effect of elevated Aβ levels on cognitive function in preclinical AD. They further suggest that elevated anxiety symptoms moderate the effect of Aβ on cognitive decline in preclinical AD, resulting in more rapid decline in several cognitive domains. Given that there is currently no standard antiamyloid therapy and that anxiety symptoms are amenable to treatment, these findings may help inform risk stratification and management of the preclinical phase of AD.

Shape memory polymer network with thermally distinct elasticity and plasticity.

PubMed

Zhao, Qian; Zou, Weike; Luo, Yingwu; Xie, Tao

2016-01-01

Stimuli-responsive materials with sophisticated yet controllable shape-changing behaviors are highly desirable for real-world device applications. Among various shape-changing materials, the elastic nature of shape memory polymers allows fixation of temporary shapes that can recover on demand, whereas polymers with exchangeable bonds can undergo permanent shape change via plasticity. We integrate the elasticity and plasticity into a single polymer network. Rational molecular design allows these two opposite behaviors to be realized at different temperature ranges without any overlap. By exploring the cumulative nature of the plasticity, we demonstrate easy manipulation of highly complex shapes that is otherwise extremely challenging. The dynamic shape-changing behavior paves a new way for fabricating geometrically complex multifunctional devices.

Portable system for temperature monitoring in all phases of wine production.

PubMed

Boquete, Luciano; Cambralla, Rafael; Rodríguez-Ascariz, J M; Miguel-Jiménez, J M; Cantos-Frontela, J J; Dongil, J

2010-07-01

This paper presents a low-cost and highly versatile temperature-monitoring system applicable to all phases of wine production, from grape cultivation through to delivery of bottled wine to the end customer. Monitoring is performed by a purpose-built electronic system comprising a digital memory that stores temperature data and a ZigBee communication system that transmits it to a Control Centre for processing and display. The system has been tested under laboratory conditions and in real-world operational applications. One of the system's advantages is that it can be applied to every phase of wine production. Moreover, with minimum modification, other variables of interest (pH, humidity, etc.) could also be monitored and the system could be applied to other similar sectors, such as olive-oil production. 2010 ISA. Published by Elsevier Ltd. All rights reserved.