Science.gov

Sample records for phosphide reregistration eligibility

  1. Reregistration eligibility document (RED): Oxalic acid

    SciTech Connect

    Not Available

    1992-12-01

    EPA is directed by the Federal Insecticide, Fungicide, and Rodenticide Act as amended in 1988 (FIFRA '88) to review all pesticide products containing active ingredients initially registered before November 1, 1984, and to reregister those products that have a substantially complete data base and do not pose unreasonable adverse effects to people or the environment. This pesticide reregistration program is to be completed by the late 1990's. The Reregistration Eligibility Document (or RED) for oxalic acid discusses the scientific data and other information supporting EPA's regulatory conclusion that products containing a pesticide do not pose unreasonable risks when used as directed by Agency-approved labeling, and are eligible for reregistration.

  2. Pesticide reregistration progress report

    SciTech Connect

    Not Available

    1993-01-01

    The report is produced by the Special Review and Reregistration Division (SRRD), Office of Pesticide Programs, U.S. Environmental Protection Agency (EPA), on progress towards pesticide reregistration as mandated under 1988 amendments to the Federal Insecticide, Fungicide, and Rodenticide Act. The report shows the status of reregistration through the first quarter of the 1993 fiscal year. SRRD is in the process of re-evaluating the format and information in the Progress Report, as a result of the October 1992 Customer Survey sent to the recipients of the report. Results of the survey will be incorporated in the April 1993 issue of the report.

  3. Aluminum phosphide

    Integrated Risk Information System (IRIS)

    Aluminum phosphide ; CASRN 20859 - 73 - 8 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinoge

  4. 75 FR 3233 - Sulfometuron Methyl Amendment to Reregistration Eligibility Decision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-20

    ... November 12, 2008 (73 FR 219) (FRL-8388-5), the Agency received comments and mitigation proposals submitted... the Sulfometuron Methyl RED allowed EPA to further refine the ecological risk assessment for non-target plant species and to revise the buffer zone requirements for sulfometuron methyl. Based on...

  5. 76 FR 28776 - Pesticide Reregistration Performance Measures and Goals; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-18

    ... preamble in FR Doc. 2011-4649, published in the Federal Register of March 2, 2011 (76 FR 11456) (FRL-8859-4... AGENCY Pesticide Reregistration Performance Measures and Goals; Correction AGENCY: Environmental... March 2, 2011, concerning the Agency's progress in meeting its performance measures and goals...

  6. 76 FR 11456 - Pesticide Reregistration Performance Measures and Goals

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-02

    ... any assumptions and provide any technical information and/or data that you used. v. If you estimate.... The number of products reregistered, canceled, or amended. The number and type of data requests of Data Call-In (DCI) notices under FIFRA section 3(c)(2)(B) issued to support product reregistration...

  7. 77 FR 19662 - Pesticide Reregistration Performance Measures and Goals; Annual Progress Report; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-02

    ... AGENCY Pesticide Reregistration Performance Measures and Goals; Annual Progress Report; Notice of... notice announces the availability of EPA's progress report in meeting its performance measures and goals... information about EPA's annual achievements in meeting its performance measures and goals for...

  8. 78 FR 17204 - Pesticide Reregistration Performance Measures and Goals; Annual Progress Report; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-20

    ... AGENCY Pesticide Reregistration Performance Measures and Goals; Annual Progress Report; Notice of... notice announces the availability of EPA's progress report in meeting its performance measures and goals... information about EPA's annual achievements in meeting its performance measures and goals for...

  9. Photovoltaic cells employing zinc phosphide

    DOEpatents

    Barnett, Allen M.; Catalano, Anthony W.; Dalal, Vikram L.; Masi, James V.; Meakin, John D.; Hall, Robert B.

    1984-01-01

    A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

  10. Photovoltaic cells employing zinc phosphide

    SciTech Connect

    Barnett, A.M.; Catalano, A.W.; Dalal, V.L.; Hall, R.B.; Masi, J.V.; Meakin, J.D.

    1984-10-16

    A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

  11. Synthesis of indium phosphide

    NASA Astrophysics Data System (ADS)

    Adamski, Joseph A.

    1983-11-01

    Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry. Quartz and pyrolytic boron nitride boats are used. Several experiments were performed placing the PBN and quartz boats inside born nitride and aluminum oxide tubes in an attempt to lower silicon contamination. In-situ vacuum baking of the raw indium charge has resulted in a significant improvement in the purity of the synthesized InP.

  12. 37 CFR 2.158 - Reregistration of marks registered under Acts of 1881, 1905, and 1920.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2011-07-01 2011-07-01 false Reregistration of marks registered under Acts of 1881, 1905, and 1920. 2.158 Section 2.158 Patents, Trademarks, and Copyrights UNITED..., 1905, and 1920. Trademarks registered under the Act of 1881, the Act of 1905 or the Act of 1920 may...

  13. 37 CFR 2.158 - Reregistration of marks registered under Acts of 1881, 1905, and 1920.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2010-07-01 2010-07-01 false Reregistration of marks registered under Acts of 1881, 1905, and 1920. 2.158 Section 2.158 Patents, Trademarks, and Copyrights UNITED..., 1905, and 1920. Trademarks registered under the Act of 1881, the Act of 1905 or the Act of 1920 may...

  14. 77 FR 15234 - Controlled Substances and List I Chemical Registration and Reregistration Fees

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-15

    ... registration and reregistration was published on July 6, 2011, at 76 FR 39318, with a 60 day comment period..., Public Law 103-200, 107 Stat. 2333. \\6\\ 36 FR 4928 (March 13, 1971); 36 FR 7776 (April 24, 1971). In 1973... the general fund of the United States Treasury. \\7\\ Reorganization Plan No. 2 of 1973, 38 FR...

  15. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; DiNetta, Louis C.; DuganCavanagh, K.; Goetz, M. A.

    1996-01-01

    Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

  16. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

    1995-01-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  17. Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide and gallium phosphide alloys

    NASA Technical Reports Server (NTRS)

    1972-01-01

    Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.

  18. Education, reregistration, and recommendation effect of iPhone Poomsae education app in Taekwondo academy.

    PubMed

    Ha, In Sook; Lee, Seung Il; Cha, Eun Jong; Lee, Tae Soo

    2011-01-01

    This paper analyzed the effect of a smartphone application in Taekwondo Academy. The iPhone app was self-developed to display Taekwondo education contents for Poomsae training. From the viewpoint of education, reregistration and recommendation effect, it showed statistically significant difference in 196 trainee sample survey. Therefore, the research suggest that the use of smartphone technology in Poomsae education would be a great help to the trainee for the acquisition of Taekwondo knowledge and make a great contribution to the growth of Taekwondo.

  19. Phonon properties of americium phosphide

    NASA Astrophysics Data System (ADS)

    Arya, B. S.; Aynyas, Mahendra; Sanyal, S. P.

    2016-05-01

    Phonon properties of AmP have been studied by using breathing shell models (BSM) which includes breathing motion of electrons of the Am atoms due to f-d hybridization. The phonon dispersion curves, specific heat calculated from present model. The calculated phonon dispersion curves of AmP are presented follow the same trend as observed in uranium phosphide. We discuss the significance of this approach in predicting the phonon dispersion curves of these compounds and examine the role of electron-phonon interaction.

  20. Phosphide poisoning: a review of literature.

    PubMed

    Bumbrah, Gurvinder Singh; Krishan, Kewal; Kanchan, Tanuj; Sharma, Madhulika; Sodhi, Gurvinder Singh

    2012-01-10

    Metal phosphides in general and aluminium phosphide in particular are potent insecticides and rodenticides. These are commercially used for protection of crops during storage, as well as during transportation. However, these are highly toxic substances. Their detrimental effects may range from nausea and headache to renal failure and death. It is, therefore, pertinent to ensure their circumspect handling to avoid poisoning episodes. Its poisoning has a high mortality and recent years have seen an increase in the number of poisoning cases and deaths caused by suicidal ingestion. Yet due to their broad spectrum applications, these chemicals cannot be written off. The present communication reviews the various aspects of toxicity associated with metal phosphides.

  1. Can Ni phosphides become viable hydroprocessing catalysts?

    SciTech Connect

    Soled, S.; Miseo, S.; Baumgartner, J.; Guzman, J.; Bolin, T.; Meyer, R.

    2015-05-15

    We prepared higher surface area nickel phosphides than are normally found by reducing nickel phosphate. To do this, we hydrothermally synthesized Ni hydroxy phosphite precursors with low levels of molybdenum substitution. The molybdenum substitution increases the surface area of these precursors. During pretreatment in a sulfiding atmosphere (such as H2S/H2) dispersed islands of MoS2 segregate from the precursor and provide a pathway for H2 dissociation that allows reduction of the phosphite precursor to nickel phosphide at substantially lower temperatures than in the absence of MoS2. The results reported here show that to create nickel phosphides with comparable activity to conventional supported sulfide catalysts, one would have to synthesize the phosphide with surface areas exceeding 400 m2/g (i.e. with nanoparticles less than 30 Å in lateral dimension).

  2. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  3. Transition Metal Phosphide Hydroprocessing Catalysts: A review

    SciTech Connect

    Oyama, S.; Gott, T; Zhao, H; Lee, Y

    2009-01-01

    The diminishing quality of oil feedstocks coupled with increasingly more stringent environmental regulations limiting the content of sulfur in transportation fuels have given rise to a need for improved hydroprocessing technology. This review begins with a summary of the major improvements in hydrodesulfurization (HDS) and hydrodenitrogenation (HDN) catalysts and processes that have been reported in recent years. It then describes a new class of hydroprocessing catalysts, the transition metal phosphides, which have emerged as a promising group of high-activity, stable catalysts. The phosphides have physical properties resembling ceramics, so are strong and hard, yet retain electronic and magnetic properties similar to metals. Their crystal structures are based on trigonal prisms, yet they do not form layered structures like the sulfides. They display excellent performance in HDS and HDN, with the most active phosphide, Ni{sub 2}P, having activity surpassing that of promoted sulfides on the basis of sites titrated by chemisorption (CO for the phosphides, O{sub 2} for the sulfides). In the HDS of difficult heteroaromatics like 4,6-dimethyldibenzothiophene Ni{sub 2}P operates by the hydrogenation pathway, while in the HDN of substituted nitrogen compounds like 2-methylpiperidine it carries out nucleophilic substitution. The active sites for hydrogenation in Ni{sub 2}P have a square pyramidal geometry, while those for direct hydrodesulfurization have a tetrahedral geometry. Overall, Ni{sub 2}P is a promising catalyst for deep HDS in the presence of nitrogen and aromatic compounds.

  4. Sinterless Formation Of Contacts On Indium Phosphide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

  5. InP (Indium Phosphide): Into the future

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.

    1989-01-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

  6. Gallium arsenide phosphide top solar cell

    SciTech Connect

    McNeely, J.B.; Barnett, A.M.

    1986-04-15

    This patent describes a tandem solar cell having a silicon solar cell for a low energy gap bottom cell and a high energy gap top cell. The improvement which a gallium arsenide phosphide top solar cell which described here is a. a transparent gallium phosphide substrate; b. a first active semiconductor layer of GaAs/sub 1-Y/P/sub Y/ and of a first conductivity type overlying the substrate; c. a second active semiconductor layer of GaAs/sub 1-X/P/sub X/ and of a second conductivity type opposite the first conductivity type overlying and forming a photovoltaic junction therewith; d. a transparent first electrical contact in ohmic contact with the substrate; and e. a transparent second electrical contact in ohmic contact with the second active semiconductor layer.

  7. Efficient water reduction with gallium phosphide nanowires

    PubMed Central

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-01-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. PMID:26183949

  8. Microwave-assisted synthesis of transition metal phosphide

    DOEpatents

    Viswanathan, Tito

    2014-12-30

    A method of synthesizing transition metal phosphide. In one embodiment, the method has the steps of preparing a transition metal lignosulfonate, mixing the transition metal lignosulfonate with phosphoric acid to form a mixture, and subjecting the mixture to a microwave radiation for a duration of time effective to obtain a transition metal phosphide.

  9. Stability and bonding of new superalkali phosphide species.

    PubMed

    Cochran, Elizabeth; Muller, Giel; Meloni, Giovanni

    2015-09-01

    New superalkali phosphide species with the molecular formulas F2Li3P, F2Li3P2, and F4Li6P were investigated. Using the CBS-QB3 composite method to optimize geometry and energetic parameters, four monophosphides, two diphosphides, and one disuperalkali phosphide were discovered that contain intriguing structural features, including hyperlithiation, phosphorus-phosphorus bonds, and planar tetracoordinated phosphorus. It is believed that these features lend to the stability of these structures and may warrant further experimental investigation of these phosphide species to determine if they could play some role in the development of novel chemical reactions and/or materials. PMID:26219751

  10. A systematic review of aluminium phosphide poisoning.

    PubMed

    Mehrpour, Omid; Jafarzadeh, Mostafa; Abdollahi, Mohammad

    2012-03-01

    Every year, about 300,000 people die because of pesticide poisoning worldwide. The most common pesticide agents are organophosphates and phosphides, aluminium phosphide (AlP) in particular. AlP is known as a suicide poison that can easily be bought and has no effective antidote. Its toxicity results from the release of phosphine gas as the tablet gets into contact with moisture. Phosphine gas primarily affects the heart, lungs, gastrointestinal tract, and kidneys. Poisoning signs and symptoms include nausea, vomiting, restlessness, abdominal pain, palpitation, refractory shock, cardiac arrhythmias, pulmonary oedema, dyspnoea, cyanosis, and sensory alterations. Diagnosis is based on clinical suspicion, positive silver nitrate paper test to phosphine, and gastric aspirate and viscera biochemistry. Treatment includes early gastric lavage with potassium permanganate or a combination with coconut oil and sodium bicarbonate, administration of charcoal, and palliative care. Specific therapy includes intravenous magnesium sulphate and oral coconut oil. Moreover, acidosis can be treated with early intravenous administration of sodium bicarbonate, cardiogenic shock with fluid, vasopresor, and refractory cardiogenic shock with intra-aortic baloon pump or digoxin. Trimetazidine may also have a useful role in the treatment, because it can stop ventricular ectopic beats and bigeminy and preserve oxidative metabolism. This article reviews the epidemiological, toxicological, and clinical/pathological aspects of AlP poisoning and its management.

  11. Thin boron phosphide coating as a corrosion-resistant layer

    DOEpatents

    Not Available

    1982-08-25

    A surface prone to corrosion in corrosive environments is rendered anticorrosive by CVD growing a thin continuous film, e.g., having no detectable pinholes, thereon, of boron phosphide. In one embodiment, the film is semiconductive. In another aspect, the invention is an improved photoanode, and/or photoelectrochemical cell with a photoanode having a thin film of boron phosphide thereon rendering it anticorrosive, and providing it with unexpectedly improved photoresponsive properties.

  12. Cavity optomechanics in gallium phosphide microdisks

    NASA Astrophysics Data System (ADS)

    Mitchell, Matthew; Hryciw, Aaron C.; Barclay, Paul E.

    2014-04-01

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8 × 105 and mode volumes <10(λ/n)3, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0 × 104 intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 μm and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g0/2π˜30 kHz for the fundamental mechanical radial breathing mode at 488 MHz.

  13. Direct band gap wurtzite gallium phosphide nanowires.

    PubMed

    Assali, S; Zardo, I; Plissard, S; Kriegner, D; Verheijen, M A; Bauer, G; Meijerink, A; Belabbes, A; Bechstedt, F; Haverkort, J E M; Bakkers, E P A M

    2013-04-10

    The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555-690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality.

  14. Successful management of zinc phosphide poisoning

    PubMed Central

    Shakoori, Vahid; Agahi, Mahsa; Vasheghani-Farahani, Maryam; Marashi, Sayed Mahdi

    2016-01-01

    Zinc phosphide (Zn2P3) rodenticide, is generally misused intentionally for suicidal purpose in Iran. For many years, scientists believe that liberation of phosphine (PH3) on contact with acidic content of the stomach is responsible for clinical presentations. However, relatively long time interval between ingestion of Zn2P3 and presentation of its systemic toxicity, and progression of acute liver failure could not be explained by the current opinion. Hence, an innovative theory intended that phosphonium, as an intermediate product will create and pass through the stomach, which then will reduce to produce PH3in the luminal tract. Here, we present a case of massive Zn2P3 poisoning. In our case, we used repeated doses of castor oil to induce bowel movement with an aim of removing unabsorbed toxin, which was proved by radiography. Interestingly, the patient presents only mild symptoms of toxicity such as transient metabolic acidosis and hepatic dysfunction. PMID:27390464

  15. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8 × 10{sup 5} and mode volumes <10(λ/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0 × 10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 μm and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2π∼30 kHz for the fundamental mechanical radial breathing mode at 488 MHz.

  16. BP: synthesis and properties of boron phosphide

    NASA Astrophysics Data System (ADS)

    Woo, Katherine; Lee, Kathleen; Kovnir, Kirill

    2016-07-01

    Cubic boron phosphide, BP, is notorious for its difficult synthesis, thus preventing it from being a widely used material in spite of having numerous favorable technological properties. In the current work, three different methods of synthesis are developed and compared: from the high temperature reaction of elements, Sn flux assisted synthesis, and a solid state metathesis reaction. Structural and optical properties of the products synthesized from the three methods were thoroughly characterized. Solid state metathesis is shown to be the cleanest and most efficient method in terms of reaction temperature and time. Synthesis by Sn flux resulted in a novel Sn-doped BP compound. Undoped BP samples exhibit an optical bandgap of ∼2.2 eV while Sn-doped BP exhibits a significantly smaller bandgap of 1.74 eV. All synthesized samples show high stability in concentrated hydrochloric acid, saturated sodium hydroxide solutions, and fresh aqua regia.

  17. Direct Band Gap Wurtzite Gallium Phosphide Nanowires

    PubMed Central

    2013-01-01

    The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality. PMID:23464761

  18. Successful management of zinc phosphide poisoning.

    PubMed

    Shakoori, Vahid; Agahi, Mahsa; Vasheghani-Farahani, Maryam; Marashi, Sayed Mahdi

    2016-06-01

    Zinc phosphide (Zn2P3) rodenticide, is generally misused intentionally for suicidal purpose in Iran. For many years, scientists believe that liberation of phosphine (PH3) on contact with acidic content of the stomach is responsible for clinical presentations. However, relatively long time interval between ingestion of Zn2P3 and presentation of its systemic toxicity, and progression of acute liver failure could not be explained by the current opinion. Hence, an innovative theory intended that phosphonium, as an intermediate product will create and pass through the stomach, which then will reduce to produce PH3in the luminal tract. Here, we present a case of massive Zn2P3 poisoning. In our case, we used repeated doses of castor oil to induce bowel movement with an aim of removing unabsorbed toxin, which was proved by radiography. Interestingly, the patient presents only mild symptoms of toxicity such as transient metabolic acidosis and hepatic dysfunction. PMID:27390464

  19. The European Register for Specialists in Clinical Chemistry and Laboratory Medicine: guide to the Register Version 2-2003 and procedure for re-registration.

    PubMed

    Gurr, Eberhard; Koller, Ursula; Blaton, Vic; Lund, Erik; Harmoinen, Aimo; Zerah, Simone; Rizos, Demetrios; Kenny, Desmond; Pazzagli, Mario; Opp, Matthias; Willems, Hans; Reguengo, Henrique; Queraltó, José; Wallinder, Hans; McMurray, Janet; Jansen, Rob; Parviainen, Markku; Beastall, Graham; Kohse, Klaus P

    2003-02-01

    The European Communities Confederation of Clinical Chemistry and Laboratory Medicine (EC4) opened a Register for European Chemists in 1997. The operation of the Register is undertaken by a Register Committee (EC4RC). During the last 5 years more than 1,400 clinical chemists entered the register. In this article an update of the first Guide to the Register is given, based on the experience of 5 years of operation and the development of the discipline. The registration is valid for 5 years. In a second part the procedure and the conditions for re-registration are presented. PMID:12667013

  20. Method for production of free-standing polycrystalline boron phosphide film

    DOEpatents

    Baughman, Richard J.; Ginley, David S.

    1985-01-01

    A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

  1. Free-standing polycrystalline boron phosphide film and method for production thereof

    DOEpatents

    Baughman, R.J.; Ginley, D.S.

    1982-09-09

    A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

  2. Successful Management of Aluminium Phosphide Poisoning Resulting in Cardiac Arrest.

    PubMed

    Hakimoğlu, Sedat; Dikey, İsmail; Sarı, Ali; Kekeç, Leyla; Tuzcu, Kasım; Karcıoğlu, Murat

    2015-08-01

    Aluminum phosphide has high toxicity when it is ingested, and in case of contact with moisture, phosphine gas is released. Aluminum phosphide poisoning causes metabolic acidosis, arrhythmia, acute respiratory distress syndrome and shock, and there is no specific antidote. A 17-year-old male patient was referred to our hospital because of aluminum phosphide poisoning with 1500 mg of aluminum phosphide tablets. The patient's consciousness was clear but he was somnolent. Vital parameters were as follows: blood pressure: 85/56 mmHg, pulse: 88 beats/min, SpO2: 94%, temperature: 36.4°C. Because of hypotension, noradrenaline and dopamine infusions were started. The patient was intubated because of respiratory distress and loss of consciousness. Severe metabolic acidosis was determined in the arterial blood gas, and metabolic acidosis was corrected by sodium bicarbonate treatment. In addition to supportive therapy of the poisoning, haemodialysis was performed. Cardiac arrest occurred during follow-ups in the intensive care unit, and sinus rhythm was achieved after 10 min of cardiopulmonary resuscitation. The patient was discharged after three sessions of haemodialysis on the ninth day. As a result, haemodialysis contributed to symptomatic treatment of aluminum phosphide poisoning in this case report. PMID:27366514

  3. Carbon phosphide monolayers with superior carrier mobility.

    PubMed

    Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P

    2016-04-28

    Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics. PMID:27067002

  4. Phosphide-based materials as hard optical coatings

    NASA Astrophysics Data System (ADS)

    Lewis, Keith L.; Savage, James A.

    1990-08-01

    A requirement exists for more durable windows for airborne applications to improve their survivability under highly erosive conditions. A range of materials show potential including nitrides, phosphides, carbides and diamond. This paper will address the phosphide materials system and review the various possibilities available. Materials such as gallium phosphide show promise for use In the infrared on the basis of their behaviour in bulk form, with significant lattice absorption bands only apparent at wavelengths beyond l2jnn. Other known phosphides include those of Al, B, Si, Mg, In, Zn, Cd, Rb, Ir, Ni, Go, Y, Sc, Ti, Nb, Mo, W, Th as well as several of the rare earth elements. Ternary systen have also been examined, largely as bulk materials. Recently the potential of phosphide materials for infra-red applications has been highlighted by the deinstration of high durability in amorphous coatings of boron phosphide deposited by plasma assisted chemcal vapour deposition. The levels of durability obtained have exceeded those characteristic of diamond-like carbon, whilst allowing simultaneous transmission of both IR bands and the important 1.O6im wavelength. Here there is significant evidence of the role of non-stoichiometry, with P/B ratios of as high as 7 being typical. Some forms of amorphous phosphorus itself have been known to demonstrate remarkable stability, with samples remaining atomically clean in dry air for significant periods of time. Various other forms of high phosphorus polyphosphides are known, such as those containing alkali metals in a bridging configuration between phosphorus skeletons. These can be produced as thin films and exhibit high levels of stability and adhesion.

  5. A mild reduction phosphidation approach to nanocrystalline GaP

    NASA Astrophysics Data System (ADS)

    Chen, Luyang; Luo, Tao; Huang, Mingxing; Gu, Yunle; Shi, Liang; Qian, Yitai

    2004-12-01

    Nanocrystalline gallium phosphide (GaP) has been prepared through a reduction-phosphidation by using Ga, PCl 3 as gallium and phosphorus sources and metallic sodium as reductant at 350 °C. The XRD pattern can be indexed as cublic GaP with the lattice constant of a=5.446 Å. The TEM image shows particle-like polycrystals and flake-like single crystals. The PL spectrum exhibits one peak at 330 nm for the as-prepared nanocrystalline GaP.

  6. Eligibility Requirements

    MedlinePlus

    ... Home > Donating Blood > Eligibility Requirements Printable Version Eligibility Requirements This page uses Javascript. Your browser either doesn' ... donors » Weigh at least 110 lbs. Additional weight requirements apply for donors 18-years-old and younger ...

  7. Carbon phosphide monolayers with superior carrier mobility

    NASA Astrophysics Data System (ADS)

    Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

    2016-04-01

    Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great promise for applications in high-performance electronics and optoelectronics.Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of the carbon phosphide (CP) monolayer consisting of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as α-CP and β-CP with puckered or buckled surfaces are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have the lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The γ-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest that the binary CP monolayer is a yet unexplored 2D material holding great

  8. Manganese phosphide thin films and nanorods grown on gallium phosphide and on glass substrates

    NASA Astrophysics Data System (ADS)

    Nateghi, N.; Lambert-Milot, S.; Ménard, D.; Masut, R. A.

    2016-05-01

    We report a simple and fast route to grow ferromagnetic manganese phosphide polycrystalline films and nanorods on GaP and on glass substrates using metalorganic vapor phase deposition. Increasing the growth temperature (≥600 °C) and growth time (≥30 min) results in nucleation of secondary MnP crystals on the primary grains. The secondary crystals grow faster along a specific direction of orthorhombic MnP (c-axis) and form long rods (up to ~10 μm) whose diameters are in the nanoscale (20-100 nm). The nanorods can be easily detached from the glass substrate. The films exhibit ferromagnetic behavior with a range of transition temperatures, depending on the growth conditions.

  9. Thin-film cadmium telluride and zinc phosphide solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.

    1981-06-01

    Major efforts during this quarter were directed to the deposition and characterization of zinc phosphide and cadmium telluride films and solar cells. The deposition of zinc phosphide films by the reaction of zinc and phosphine in a hydrogen atmosphere was continued and the composition of deposited films was determined. For more efficient utilization of phosphine, a 8500 C zone was added to the deposition. The in-situ annealing of zinc phosphide in phosphine was carried out. Attempts to prepare solar cell structures by depositing a thin film of zinc phosphide on an annealed film were made; however, the results are inconclusive. The deposition of cadmium telluride films by the direct combination of the elements under reduced pressure and under atmospheric pressure was carried out. Films deposited under reduced pressure exhibited more compact grain structures, however, they showed poor photoresponse. The composition of the films deposited under atmospheric pressure were analyzed and the dependence of short circuit density on the reactant composition was investigated.

  10. Responses of Siberian ferrets to secondary zinc phosphide poisoning

    USGS Publications Warehouse

    Hill, E.F.; Carpenter, J.W.

    1982-01-01

    The hazard of operational-type applications of zinc phosphide (Zn3P2) on a species closely related to the black-footed ferret (Mustela nigripes), was evaluated by feeding 16 Siberian ferrets (M. eversmanni) rats that had been killed by consumption of 2% zinc phosphide treated bait or by an oral dose of 40, 80, or 160 mg of Zn3P2. All ferrets accepted rats and a single emesis by each of 3 ferrets was the only evidence of acute intoxication. All ferrets learned to avoid eating gastrointestinal tracts of the rats. Subacute zinc phosphide toxicity in the ferrets was indicated by significant decreases (18-48%) in hemoglobin, increases of 35-91 % in serum iron, and elevated levels of serum globulin, cholesterol, and triglycerides. Hemoglobin/iron, urea nitrogen/creatinine, and albumin/globulin ratios also were altered by the treatments. This study demonstrated that Siberian ferrets, or other species with a sensitive emetic reflex, are afforded a degree of protection from acute zinc phosphide poisoning due to its emetic action. The importance of toxicity associated with possible respiratory, liver, and kidney damage indicated by altered blood chemistries is not known.

  11. Visible light electroluminescent diodes of indium-gallium phosphide

    NASA Technical Reports Server (NTRS)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

  12. Solvo-thermal synthesis of crystalline dinickel phosphide

    NASA Astrophysics Data System (ADS)

    Lü, Bo; Bai, Yu-Jun; Feng, Xin; Zhao, Yong-Rui; Yang, Jie; Chi, Jie-Ru

    2004-01-01

    Nanocrystalline dinickel phosphide was synthesized via a solvo-thermal route using PCl 3 and NiCl 2 as precursors, and Na as reductant. The crystals were characterized by X-ray powder diffraction and transmission electronic microscopy. It was shown that the product is pure Ni 2P which crystallizes very well with an average size of about 80 nm.

  13. Rational Design of Zinc Phosphide Heterojunction Photovoltaics

    NASA Astrophysics Data System (ADS)

    Bosco, Jeffrey Paul

    The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an ``earth-abundant'' solar absorber, we find zinc phosphide (α-Zn 3P2) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10. 4cm-1), and long minority-carrier diffusion length (>5 μm), Zn3P 2 is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn 3P2 device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn3P 2 which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn3P2 interfaces, an ideal heterojunction partner has not yet been found. The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn3P2 absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn3P2 on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn3P2 epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn3P2 and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn3P 2 PV device. Finally, various II-VI/Zn3P2 heterojunction solar cells designs are

  14. Synthesis of transition-metal phosphides from oxidic precursors by reduction in hydrogen plasma

    SciTech Connect

    Guan Jie; Wang Yao; Qin Minglei; Yang Ying; Li Xiang; Wang Anjie

    2009-06-15

    A series of transition metal phosphides, including MoP, WP, CoP, Co{sub 2}P, and Ni{sub 2}P, were synthesized from their oxidic precursors by means of hydrogen plasma reduction under mild conditions. The effects of reduction conditions, such as metal to phosphorus molar ratio, power input, and reduction time, on the synthesis of metal phosphides were investigated. The products were identified by means of XRD characterization. It is indicated that metal phosphides were readily synthesized stoichiometrically from their oxides in hydrogen plasma under mild conditions. - Graphical abstract: Metal phosphides were obtained stoichiometrically from their oxidic precursors by hydrogen plasma reaction under mild conditions.

  15. Histopathological changes in cases of aluminium phosphide poisoning.

    PubMed

    Sinha, U S; Kapoor, A K; Singh, A K; Gupta, A; Mehrotra, Ravi

    2005-04-01

    Of a total of 205 poisoning deaths in our hospital in 2003, 83 cases were due to Aluminium phosphide poisoning and were further analyzed. Most vulnerable age group was 21-40 years and M:F ratio was 2:1. On naked eye examination, almost all the vital organs were found to be congested. On microscopic study, the liver showed central venous congestion, degeneration, haemorrhage, sinusoidal dilation, bile stasis, centrilobular necrosis, Kupffer cell hyperplasia, infiltration by mononuclear cells and fatty change. Microscopy of the lungs revealed alveolar thickening, oedema, dilated capillaries, collapsed alveoli and haemorrhage. In the kidney, changes were degeneration, infiltration, tubular dilation and cloudy swelling. Changes in the brain included congestion and coagulative necrosis and in the stomach, congestion and haemorrhage. Easy availability of this cheap and highly toxic substance was responsible for the sudden spurt of poisoning with aluminium phosphide. PMID:16758658

  16. Determination of series resistance of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving

    1991-01-01

    The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

  17. Synthesis and Hydrodeoxygenation Properties of Ruthenium Phosphide Catalysts

    SciTech Connect

    Bowker, Richard H.; Smith, Mica C.; Pease, Melissa; Slenkamp, Karla M.; Kovarik, Libor; Bussell, Mark E.

    2011-07-01

    Ru2P/SiO2 and RuP/SiO2 catalysts were prepared by the temperature-programmed reduction (TPR) of uncalcined precursors containing hypophosphite ion (H2PO2-) as the phosphorus source. The Ru2P/SiO2 and RuP/SiO2 catalysts had small average particle sizes (~4 nm) and high CO chemisorption capacities (90-110 umol/g). The Ru phosphide catalysts exhibited similar or higher furan (C4H4O) hydrodeoxygenation (HDO) activities than did a Ru/SiO2 catalyst, and the phosphide catalysts favored C4 hydrocarbon products while the Ru metal catalyst produced primarily C3 hydrocarbons.

  18. Ternary transition metal phosphides: High-temperature superconductors

    PubMed Central

    Barz, H.; Ku, H. C.; Meisner, G. P.; Fisk, Z.; Matthias, B. T.

    1980-01-01

    Two systems of ternary transition metal phosphides with the ordered Fe2P-type hexagonal structure are reported. They have the general formula MRuP and MOsP, in which M can be Ti, Zr, or Hf. An onset of the superconducting transition temperature as high as 13.0 K is reported for the ZrRuP compound. PMID:16592838

  19. Status of indium phosphide solar cell development at Spire

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

    1987-01-01

    On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

  20. Heat capacity and absolute entropy of iron phosphides

    SciTech Connect

    Dobrokhotova, Z.V.; Zaitsev, A.I.; Litvina, A.D.

    1994-09-01

    There is little or no data on the thermodynamic properties of iron phosphides despite their importance for several areas of science and technology. The information available is of a qualitative character and is based on assessments of the heat capacity and absolute entropy. In the present work, we measured the heat capacity over the temperature range of 113-873 K using a differential scanning calorimeter (DSC) and calculated the absolute entropy.

  1. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  2. Diphacinone and zinc phosphide toxicity in a flock of Peafowl.

    PubMed

    Shivaprasad, H L; Galey, F

    2001-12-01

    Toxicity probably due to a combination of diphacinone and zinc phosphide was diagnosed in a flock of peafowl, in which 35 birds in a flock of 80 died over a span of 10 days without any apparent clinical signs. Chickens and guinea fowl, 30 each on the same premises, were not affected. Plastic tubes containing diphacinone and zinc phosphide were used on the premises to control ground squirrels. Most of the six dead peafowl, which ranged in age from 6 months to 4 years, had an accumulation of serosanguinous fluid in the abdominal cavity, semi-clotted blood over the liver lobes, increased pericardial fluid, and enlarged and pale kidneys. Pellets of diphacinone and zinc phosphide were found in the crop and gizzard contents from most of the birds. Microscopically, most of the birds had mild to moderate centrolobular degeneration of hepatocytes and multifocal degeneration of myofibres in the heart with infiltration by a few mononuclear cells. Acute nephrosis and mucosal oedema in the oesophagus and crop were also observed. Toxicological analysis of the crop and gizzard contents revealed the presence of diphacinone and phosphine gas, and analysis of the crop contents from two birds for heavy metals revealed zinc levels of up to 6600 parts/10 6 . It was suspected that only the peafowl and not the chickens and guinea fowl were affected because peafowl, with their longer necks, were able to reach into the plastic tubes and eat the pellets.

  3. Diphacinone and zinc phosphide toxicity in a flock of Peafowl.

    PubMed

    Shivaprasad, H L; Galey, F

    2001-12-01

    Toxicity probably due to a combination of diphacinone and zinc phosphide was diagnosed in a flock of peafowl, in which 35 birds in a flock of 80 died over a span of 10 days without any apparent clinical signs. Chickens and guinea fowl, 30 each on the same premises, were not affected. Plastic tubes containing diphacinone and zinc phosphide were used on the premises to control ground squirrels. Most of the six dead peafowl, which ranged in age from 6 months to 4 years, had an accumulation of serosanguinous fluid in the abdominal cavity, semi-clotted blood over the liver lobes, increased pericardial fluid, and enlarged and pale kidneys. Pellets of diphacinone and zinc phosphide were found in the crop and gizzard contents from most of the birds. Microscopically, most of the birds had mild to moderate centrolobular degeneration of hepatocytes and multifocal degeneration of myofibres in the heart with infiltration by a few mononuclear cells. Acute nephrosis and mucosal oedema in the oesophagus and crop were also observed. Toxicological analysis of the crop and gizzard contents revealed the presence of diphacinone and phosphine gas, and analysis of the crop contents from two birds for heavy metals revealed zinc levels of up to 6600 parts/10 6 . It was suspected that only the peafowl and not the chickens and guinea fowl were affected because peafowl, with their longer necks, were able to reach into the plastic tubes and eat the pellets. PMID:19184953

  4. Indium phosphide space solar cell research: Where we are and where we are going

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.; Weinberg, Irving

    1995-01-01

    Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

  5. Medicaid Eligibility

    MedlinePlus

    ... and children, and individuals receiving Supplemental Security Income (SSI) are examples of mandatory eligibility groups . States have ... the income methodologies of the supplemental security income (SSI) program administered by the Social Security Administration (some ...

  6. A gallium phosphide high-temperature bipolar junction transistor

    NASA Technical Reports Server (NTRS)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

    1981-01-01

    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  7. Indium phosphide solar cells for laser power beaming applications

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Lasers can be used to transmit power to photovoltaic cells. Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very high efficiencies. This work reviews the modeling studies made on indium phosphide solar cells for such an application. These cells are known to be very radiation resistant and have a potential for high efficiency. Effects of cell series resistance, laser intensity, and temperature on cell performance have been discussed.

  8. Aluminum Phosphide Poisoning-Related Deaths in Tehran, Iran, 2006 to 2013.

    PubMed

    Etemadi-Aleagha, Afshar; Akhgari, Maryam; Iravani, Fariba Sardari

    2015-09-01

    Metal phosphides such as aluminum phosphide are potent insecticides. This highly toxic substance is used for rice and other grains protection in Iran. Due to its high toxicity potential and easy availability, it is widely used as a suicide poison. This substance has no effective antidote and the incidence of deaths due to its poisoning is increasing day by day in Iran. The present study was conducted to show the increasing incidence of fatal aluminum phosphide poisoning and its toxicological and forensic aspects in an 8-year study, 2006 to 2013. Autopsy sheets were reviewed and cases with the history of aluminum phosphide poisoning were selected. Toxicological analysis results, demographic and necroscopic examination findings were studied. A total of 51.8% of studied cases were female. Most of the cases were between 10 and 40 years old. The manner of death was self-poisoning in 85% of cases. Morphine, ethanol, and amitriptyline were the most common additional drugs detected in toxicological analysis. The incidence of fatal aluminum phosphide poisoning cases referred for phosphine analysis was 5.22 and 37.02 per million of population of Tehran in 2006 and 2013, respectively. The results of this study showed that in spite of ban and restrictions, there was a dramatic increase in the incidence of fatal aluminum phosphide poisoning in Tehran from 2006 to 2013. Safety alert should be highlighted in training program for all population groups about the toxic effects of aluminum phosphide tablets.

  9. Aluminum Phosphide Poisoning-Related Deaths in Tehran, Iran, 2006 to 2013

    PubMed Central

    Etemadi-Aleagha, Afshar; Akhgari, Maryam; Iravani, Fariba Sardari

    2015-01-01

    Abstract Metal phosphides such as aluminum phosphide are potent insecticides. This highly toxic substance is used for rice and other grains protection in Iran. Due to its high toxicity potential and easy availability, it is widely used as a suicide poison. This substance has no effective antidote and the incidence of deaths due to its poisoning is increasing day by day in Iran. The present study was conducted to show the increasing incidence of fatal aluminum phosphide poisoning and its toxicological and forensic aspects in an 8-year study, 2006 to 2013. Autopsy sheets were reviewed and cases with the history of aluminum phosphide poisoning were selected. Toxicological analysis results, demographic and necroscopic examination findings were studied. A total of 51.8% of studied cases were female. Most of the cases were between 10 and 40 years old. The manner of death was self-poisoning in 85% of cases. Morphine, ethanol, and amitriptyline were the most common additional drugs detected in toxicological analysis. The incidence of fatal aluminum phosphide poisoning cases referred for phosphine analysis was 5.22 and 37.02 per million of population of Tehran in 2006 and 2013, respectively. The results of this study showed that in spite of ban and restrictions, there was a dramatic increase in the incidence of fatal aluminum phosphide poisoning in Tehran from 2006 to 2013. Safety alert should be highlighted in training program for all population groups about the toxic effects of aluminum phosphide tablets. PMID:26402837

  10. Optimal design study of high efficiency indium phosphide space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

  11. Earth's Phosphides in Levant and insights into the source of Archean prebiotic phosphorus

    PubMed Central

    Britvin, Sergey N.; Murashko, Michail N.; Vapnik, Yevgeny; Polekhovsky, Yury S.; Krivovichev, Sergey V.

    2015-01-01

    Natural phosphides - the minerals containing phosphorus in a redox state lower than zero – are common constituents of meteorites but virtually unknown on the Earth. Herein we present the first rich occurrence of iron-nickel phosphides of terrestrial origin. Phosphide-bearing rocks are exposed in three localities in the surroundings of the Dead Sea, Levant: in the northern Negev Desert, Israel and Transjordan Plateau, south of Amman, Jordan. Seven minerals from the ternary Fe-Ni-P system have been identified with five of them, NiP2, Ni5P4, Ni2P, FeP and FeP2, previously unknown in nature. The results of the present study could provide a new insight on the terrestrial origin of natural phosphides – the most likely source of reactive prebiotic phosphorus at the times of the early Earth. PMID:25667163

  12. Earth's Phosphides in Levant and insights into the source of Archean prebiotic phosphorus.

    PubMed

    Britvin, Sergey N; Murashko, Michail N; Vapnik, Yevgeny; Polekhovsky, Yury S; Krivovichev, Sergey V

    2015-01-01

    Natural phosphides--the minerals containing phosphorus in a redox state lower than zero--are common constituents of meteorites but virtually unknown on the Earth. Herein we present the first rich occurrence of iron-nickel phosphides of terrestrial origin. Phosphide-bearing rocks are exposed in three localities in the surroundings of the Dead Sea, Levant: in the northern Negev Desert, Israel and Transjordan Plateau, south of Amman, Jordan. Seven minerals from the ternary Fe-Ni-P system have been identified with five of them, NiP2, Ni5P4, Ni2P, FeP and FeP2, previously unknown in nature. The results of the present study could provide a new insight on the terrestrial origin of natural phosphides--the most likely source of reactive prebiotic phosphorus at the times of the early Earth. PMID:25667163

  13. Photoelectrochemical cell having photoanode with thin boron phosphide coating as a corrosion resistant layer

    DOEpatents

    Baughman, Richard J.; Ginley, David S.

    1984-01-01

    A surface prone to corrosion in corrosive environments is rendered anticorrosive by CVD growing a thin continuous film, e.g., having no detectable pinholes, thereon, of boron phosphide. In one embodiment, the film is semiconductive. In another aspect, the invention is an improved photoanode, and/or photoelectrochemical cell with a photoanode having a thin film of boron phosphide thereon rendering it anitcorrosive, and providing it with unexpectedly improved photoresponsive properties.

  14. Surface reactions of molecular and atomic oxygen with carbon phosphide films.

    PubMed

    Gorham, Justin; Torres, Jessica; Wolfe, Glenn; d'Agostino, Alfred; Fairbrother, D Howard

    2005-11-01

    The surface reactions of atomic and molecular oxygen with carbon phosphide films have been studied using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Carbon phosphide films were produced by ion implantation of trimethylphosphine into polyethylene. Atmospheric oxidation of carbon phosphide films was dominated by phosphorus oxidation and generated a carbon-containing phosphate surface film. This oxidized surface layer acted as an effective diffusion barrier, limiting the depth of phosphorus oxidation within the carbon phosphide film to < 3 nm. The effect of atomic oxygen (AO) exposure on this oxidized carbon phosphide layer was subsequently probed in situ using XPS. Initially AO exposure resulted in a loss of carbon atoms from the surface, but increased the surface concentration of phosphorus atoms as well as the degree of phosphorus oxidation. For more prolonged AO exposures, a highly oxidized phosphate surface layer formed that appeared to be inert toward further AO-mediated erosion. By utilizing phosphorus-containing hydrocarbon thin films, the phosphorus oxides produced during exposure to AO were found to desorb at temperatures >500 K under vacuum conditions. Results from this study suggest that carbon phosphide films can be used as AO-resistant surface coatings on polymers.

  15. Metal and phosphide phases in Luna 24 soil fragments

    NASA Astrophysics Data System (ADS)

    Axon, H. J.; Nasir, M. J.; Knowles, F.

    1980-06-01

    Soil fragments in the 106-150 and 150-250 micron size ranges were selected for metallographic and microprobe examination on the basis of their magnetic properties. Serial sections of the mounted fragments were examined. One fragment proved to be a compositionally zoned crystal of phosphide with no metal phase but partly embedded in glass. Another was a coarse-grained association of silica with ilmenite and fayalite with a 5-micron particle of metallic iron in troilite. One splinter of oxide contained a central spine of metallic iron. The remaining six fragments contained 10-micron particles of iron-nickel-cobalt alloy with compositions in either the 'meteoritic' or the low Ni-low Co sub-meteoritic composition ranges of Ni, Co content. In some fragments separate particles of alloy had different Ni, Co contents. No particles of high Co metal were encountered.

  16. Vapor-Phase Synthesis of Gallium Phosphide Nanowires

    SciTech Connect

    Gu, Dr Zhanjun; Paranthaman, Mariappan Parans; Pan, Zhengwei

    2009-01-01

    Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 C in a tube furnace system. The nanowires have diameters in the range of 25-100 nm and lengths of up to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga-P-O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III-V compound nanowires.

  17. Rapid thermal annealing of indium phosphide compound semiconductors

    NASA Technical Reports Server (NTRS)

    Biedenbender, Michael D.; Kapoor, Vik J.; Williams, W. D.

    1987-01-01

    The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

  18. Band structures in silicene on monolayer gallium phosphide substrate

    NASA Astrophysics Data System (ADS)

    Ren, Miaojuan; Li, Mingming; Zhang, Changwen; Yuan, Min; Li, Ping; Li, Feng; Ji, Weixiao; Chen, Xinlian

    2016-07-01

    Opening a sizable band gap in the zero-gap silicene is a key issue for its application in nanoelectronics. We design new 2D silicene and GaP heterobilayer (Si/GaP HBL) composed of silicene and monolayer (ML) GaP. Based on first-principles calculations, we find that the interaction energies are in the range of -295.5 to -297.5 meV per unit cell, indicating a weak interaction between silicene and gallium phosphide (GaP) monolayer. The band gap changes ranging from 0.06 to 0.44 eV in hybrid HBLs. An unexpected indirect-direct band gap crossover is also observed in HBLs, dependent on the stacking pattern. These provide a possible way to design effective FETs out of silicene on GaP monolayer.

  19. Zinc phosphide intoxication of wild turkeys (Meleagris gallopavo).

    PubMed

    Poppenga, Robert H; Ziegler, Andre F; Habecker, Perry L; Singletary, Don L; Walter, Mark K; Miller, Paul G

    2005-01-01

    Zinc phosphide (Zn3P2) is a rodenticide used to control a variety of small mammal species. It is available over-the-counter or as a restricted-use pesticide depending on how it is to be applied. The toxicity of Zn3P2 is dependent on the species exposed, whether the animal is able to vomit or not, and whether it is ingested on a full or empty stomach. Nontarget species can be exposed through inadvertent or intentional product misapplication. In this article we describe four mortality events in which wild turkeys (Meleagris gallopavo) were believed to have been intoxicated following the ingestion of baits containing Zn3P2.

  20. Elasto-optic effect anisotropy in gallium phosphide crystals.

    PubMed

    Mytsyk, B G; Demyanyshyn, N M; Sakharuk, O M

    2015-10-01

    Elasto-optic coefficients of gallium phosphide (GaP) crystals were calculated on the basis of their piezo-optic and elastic coefficients. Surfaces of the spatial distribution of piezo- and elasto-optic effects in these crystals were built. The maxima of the surfaces of the elasto-optic effect and the geometries of acousto-optic interaction that correspond to these maxima were found. Ratios that describe the rotation of optical indicatrix, depending on direction of the action of uniaxial pressure or deformation on cubic crystal, were recorded. It was shown that such rotations induced by mechanical stress do not exceed 1.5° in GaP, but in some cubic crystals they can reach tens of degrees. PMID:26479633

  1. Fabrication and properties of gallium phosphide variable colour displays

    NASA Technical Reports Server (NTRS)

    Effer, D.; Macdonald, R. A.; Macgregor, G. M.; Webb, W. A.; Kennedy, D. I.

    1973-01-01

    The unique properties of single-junction gallium phosphide devices incorporating both red and green radiative recombination centers were investigated in application to the fabrication of monolithic 5 x 7 displays capable of displaying symbolic and alphanumeric information in a multicolor format. A number of potentially suitable material preparation techniques were evaluated in terms of both material properties and device performance. Optimum results were obtained for double liquid-phase-epitaxial process in which an open-tube dipping technique was used for n-layer growth and a sealed tipping procedure for subsequent p-layer growth. It was demonstrated that to prepare devices exhibiting a satisfactory range of dominant wavelengths which can be perceived as distinct emission colors extending from the red through green region of the visible spectrum involves a compromise between the material properties necessary for efficient red emission and those considered optimum for efficient green emission.

  2. Mechanical mixtures of metal oxides and phosphorus pentoxide as novel precursors for the synthesis of transition-metal phosphides.

    PubMed

    Guo, Lijuan; Zhao, Yu; Yao, Zhiwei

    2016-01-21

    This study presents a new type of precursor, mechanical mixtures of metal oxides (MOs) and phosphorus pentoxide (P2O5) are used to synthesize Ni2P, Co2P and MoP phosphides by the H2 reduction method. In addition, this is first report of common solid-state P2O5 being used as a P source for the synthesis of metal phosphides. The traditional precursors are usually prepared via a complicated preparation procedure involving dissolution, drying and calcination steps. However, these novel MOs/P2O5 precursors can be obtained only by simple mechanical mixing of the starting materials. Furthermore, unlike the direct transformation from amorphous phases to phosphides, various specific intermediates were involved in the transformation from MOs/P2O5 to phosphides. It is worthy to note that the dispersions of Ni2P, Co2P and MoP obtained from MOs/P2O5 precursors were superior to those of the corresponding phosphides prepared from the abovementioned traditional precursors. It is suggested that the morphology of the as-prepared metal phosphides might be inherited from the corresponding MOs. Based on the results of XRD, XPS, SEM and TEM, the formation pathway of phosphides can be defined as MOs/P2O5 precursors → complex intermediates (metals, metal phosphates and metal oxide-phosphates) → metal phosphides.

  3. Novel, high-activity hydroprocessing catalysts: Iron group phosphides

    NASA Astrophysics Data System (ADS)

    Wang, Xianqin

    A series of iron, cobalt and nickel transition metal phosphides was synthesized by means of temperature-programmed reduction (TPR) of the corresponding phosphates. The same materials, Fe2P, CoP and NO, were also prepared on a silica (SiO2) support. The phase purity of these catalysts was established by x-ray diffraction (XRD), and the surface properties were determined by N2 BET specific surface area (Sg) measurements and CO chemisorption. The activities of the silica-supported catalysts were tested in a three-phase trickle bed reactor for the simultaneous hydrodenitrogenation (HDN) of quinoline and hydrodesulfurization (HDS) of dibenzothiophene using a model liquid feed at realistic conditions (30 atm, 370°C). The reactivity studies showed that the nickel phosphide (Ni2P/SiO2) was the most active of the catalysts. Compared with a commercial Ni-Mo-S/gamma-Al 2O3 catalyst at the same conditions, Ni2P/silica had a substantially higher HDS activity (100% vs. 76%) and HDN activity (82% vs. 38%). Because of their good hydrotreating activity, an extensive study of the preparation of silica supported nickel phosphides, Ni2P/SiO 2, was carried out. The parameters investigated were the phosphorus content and the weight loading of the active phase. The most active composition was found to have a starting synthesis Ni/P ratio close to 1/2, and the best loading of this sample on silica was observed to be 18 wt.%. Extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge spectroscopy (XANES) measurements were employed to determine the structures of the supported samples. The main phase before and after reaction was found to be Ni2P, but some sulfur was found to be retained after reaction. A comprehensive scrutiny of the HDN reaction mechanism was also made over the Ni2P/SiO2 sample (Ni/P = 1/2) by comparing the HDN activity of a series of piperidine derivatives of different structure. It was found that piperidine adsorption involved an alpha-H activation

  4. Synthesis and catalytic activity of the metastable phase of gold phosphide

    NASA Astrophysics Data System (ADS)

    Fernando, Deshani; Nigro, Toni A. E.; Dyer, I. D.; Alia, Shaun M.; Pivovar, Bryan S.; Vasquez, Yolanda

    2016-10-01

    Recently, transition metal phosphides have found new applications as catalysts for the hydrogen evolution reaction that has generated an impetus to synthesize these materials at the nanoscale. In this work, Au2P3 was synthesized utilizing the high temperature decomposition of tri-n-octylphosphine as a source of elemental phosphorous. Gold nanorods were used as morphological templates with the aim of controlling the shape and size of the resulting gold phosphide particles. We demonstrate that the surface capping ligand of the gold nanoparticle precursors can influence the purity and extent to which the gold phosphide phase will form. Gold nanorods functionalized with 1-dodecanethiol undergo digestive ripening to produce discrete spherical particles that exhibit reduced reactivity towards phosphorous, resulting in low yields of the gold phosphide. In contrast, gold phosphide was obtained as a phase pure product when cetyltrimethylammonium bromide functionalized gold nanorods are used instead. The Au2P3 nanoparticles exhibited higher activity than polycrystalline gold towards the hydrogen evolution reaction.

  5. Andreyivanovite: A Second New Phosphide from the Kaidun Meteorite

    NASA Technical Reports Server (NTRS)

    Zolensky, Michael

    2008-01-01

    Andreyivanovite (ideally FeCrP) is another new phosphide species from the Kaidun meteorite, which fell in South Yemen in 1980. Kaidun is a unique breccia containing an unprecedented variety of fragments of different chondritic as well as achondritic lithologies. Andreyivanovite was found as individual grains and linear arrays of grains with a maximum dimension of 8 m within two masses of Fe-rich serpentine. In one sample it is associated with Fe-Ni-Cr sulfides and florenskyite (FeTiP). Andreyivanovite is creamy white in reflected light, and its luster is metallic. The average of nine electron microprobe analyses yielded the formula Fe(Cr0.587 Fe0.150 V0.109 Ti0.081 Ni0.060 Co0.002)P. Examination of single grains of andreyivanovite using Laue patterns collected by in-situ synchrotron X-ray diffraction (XRD), and by electron backscattered diffraction revealed that it is isostructural with florenskyite; we were unable to find single crystals of sufficient quality to perform a complete structure analysis. Andreyivanovite crystallizes in the space group Pnma, and has the anti-PbCl2 structure. Previously-determined cell constants of synthetic material [a = 5.833(1), b = 3.569(1), c = 6.658(1) A] were consistent with our XRD work. We used the XPOW program to calculate a powder XRD pattern; the 5 most intense reflections are d = 2.247 (I = 100), 2.074 (81), 2.258 (46), 1.785 (43), and 1.885 A (34). Andreyivanovite is the second new phosphide to be described from the Kaidun meteorite. Andreyivanovite could have formed as a result of cooling and crystallization of a melted precursor consisting mainly of Fe-Ni metal enriched in P, Ti, and Cr. Serpentine associated with andreyivanovite would then have formed during aqueous alteration on the parent asteroid. It is also possible that the andreyivanovite could have formed during aqueous alteration, however, artificial FeTiP has been synthesized only during melting experiments, at low oxygen fugacity, and there is no evidence that

  6. Method of synthesizing bulk transition metal carbide, nitride and phosphide catalysts

    DOEpatents

    Choi, Jae Soon; Armstrong, Beth L; Schwartz, Viviane

    2015-04-21

    A method for synthesizing catalyst beads of bulk transmission metal carbides, nitrides and phosphides is provided. The method includes providing an aqueous suspension of transition metal oxide particles in a gel forming base, dropping the suspension into an aqueous solution to form a gel bead matrix, heating the bead to remove the binder, and carburizing, nitriding or phosphiding the bead to form a transition metal carbide, nitride, or phosphide catalyst bead. The method can be tuned for control of porosity, mechanical strength, and dopant content of the beads. The produced catalyst beads are catalytically active, mechanically robust, and suitable for packed-bed reactor applications. The produced catalyst beads are suitable for biomass conversion, petrochemistry, petroleum refining, electrocatalysis, and other applications.

  7. Gas phase catalytic hydrodechlorination of chlorobenzene over cobalt phosphide catalysts with different P contents.

    PubMed

    Cecilia, J A; Infantes-Molina, A; Rodríguez-Castellón, E; Jiménez-López, A

    2013-09-15

    The gas phase catalytic hydrodechlorination (HDC) of chlorobenzene (CB) at atmospheric pressure was investigated over silica-supported cobalt and cobalt phosphide catalysts containing different P loading and a fixed amount of cobalt (5 wt.%). The effect of the initial P/Co molar ratio on the stoichiometry of the cobalt phosphide phase, the acidity and the hydrogen activation capability were discussed and these properties correlated with the catalytic activity. Catalytic results indicated that the cobalt phosphide phase is much more active than the monometallic cobalt one. The activity raised with the P content present in the sample due to the formation of the CoP phase instead of the Co₂P one, which favored the formation of hydrogen spillover species, increased the amount of weak acid sites and the number of exposed superficial cobalt atoms probably related to a better dispersion of the active phase. All the catalysts gave rise benzene as the main reaction product.

  8. A case of accidental fatal aluminum phosphide poisoning involving humans and dogs.

    PubMed

    Behera, Chittaranjan; Krishna, Karthik; Bhardwaj, Daya Nand; Rautji, Ravi; Kumar, Arvind

    2015-05-01

    Aluminum phosphide is one of the commonest poisons encountered in agricultural areas, and manner of death in the victims is often suicidal and rarely homicidal or accidental. This paper presents an unusual case, where two humans (owner and housemaid) and eight dogs were found dead in the morning hours inside a room of a house, used as shelter for stray dogs. There was allegation by the son of the owner that his father had been killed. Crime scene visit by forensic pathologists helped to collect vital evidence. Autopsies of both the human victims and the dogs were conducted. Toxicological analysis of viscera, vomitus, leftover food, and chemical container at the crime scene tested positive for aluminum phosphide. The cause of death in both humans and dogs was aluminum phosphide poisoning. Investigation by police and the forensic approach to the case helped in ascertaining the manner of death, which was accidental.

  9. Protective Role of G6PD Deficiency in Aluminium Phosphide Poisoning.

    PubMed

    Humayun, Mohammad; Haider, Iqbal; Badshah, Aliena; Subhan, Fazle

    2015-04-01

    A 15-year-old boy was referred to the hospital from the periphery with a history of ingestion of 5 wheat pills (aluminium phosphide) 5 days back. He had been given a stomach wash in his village hospital prior to referral. On arrival, he was jaundiced and had developed haematuria too, but otherwise appeared well in himself. Four days after admission, his haemoglobin showed a marked drop and he was shifted to intensive care, keeping in mind the high mortality rate associated with aluminium phosphide intoxication. His G6PD levels were checked, and he turned out to be G6PD deficient. The patient was given intravenous magnesium sulphate and supportive care and he improved subsequently. Wheat pill poisoning carries a high mortality of 98% in some cases; despite the high mortality, this patient survived. This may mean that G6PD deficiency has a protective role in poisoning due to aluminium phosphide.

  10. Comparative performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.; Parat, K. K.

    1987-01-01

    A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

  11. Therapeutic role of hyperinsulinemia/euglycemia in aluminum phosphide poisoning

    PubMed Central

    Hassanian-Moghaddam, Hossein; Zamani, Nasim

    2016-01-01

    Abstract Background: Different protocols have been suggested to treat aluminum phosphide (ALP) poisoning. We aimed to evaluate the possible therapeutic effect of hyperinsulinemia/euglycemia (HIE) in treatment of ALP poisoning. Methods: In a prospective interventional study, a total of 88 ALP-poisoned patients were included and assigned into HIE group undergoing glucose/insulin/potassium (GIK) protocol and a control group that was managed by routine conventional treatments. The 2 groups were then compared regarding the signs and symptoms of toxicity and their progression, development of complications, and final outcome to detect the possible effect of GIK protocol on the patients’ course of toxicity and outcome. Results: The 2 groups were similar in terms of demographic characteristics and on-arrival vital signs and lab tests. Using GIK protocol resulted in significantly longer hospital stays (24 vs 60 hours; P < 0.001) and better outcomes (72.7% vs 50% mortality; P = 0.03). Regression analysis showed that GIK duration was an independent variable that could prognosticate mortality (odds ratio [95% confidence interval] = 1.045 [1.004,1.087]). The risk of mortality decreased by 4.5% each hour after initiation of GIK. Conclusion: GIK protocol improves the outcome of ALP poisoning and increases the length of hospital stay. PMID:27495040

  12. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires.

    PubMed

    Greil, J; Assali, S; Isono, Y; Belabbes, A; Bechstedt, F; Valega Mackenzie, F O; Silov, A Yu; Bakkers, E P A M; Haverkort, J E M

    2016-06-01

    Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material. PMID:27175743

  13. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

    PubMed Central

    2016-01-01

    Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material. PMID:27175743

  14. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires.

    PubMed

    Greil, J; Assali, S; Isono, Y; Belabbes, A; Bechstedt, F; Valega Mackenzie, F O; Silov, A Yu; Bakkers, E P A M; Haverkort, J E M

    2016-06-01

    Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.

  15. Identification of phases in thin amorphous films of zinc phosphides

    SciTech Connect

    Aleinikova, K. B.; Zinchenko, E. N. Lesovoi, M. V.

    2007-03-15

    Analysis of the experimental atomic radial distribution functions for thin amorphous films of zinc phosphides obtained by explosive laser sputtering has been performed within a fragmentary model. The experiment was carried out with an Emp-10a electron diffractometer in transmitted light at accelerating voltages of 50 and 75 kV. The films obtained by sputtering of {beta}-ZnP{sub 2} single crystals contained nanoparticles of this phase. The films based on Zn{sub 3}P{sub 2} turned out to be two-phase and consisted of dispersed Zn{sub 3}P{sub 2} and {beta}-ZnP{sub 2} nanoparticles. The composition of the film obtained on the basis of {alpha}-ZnP{sub 2} corresponded neither to any one of the known phases in the Zn-P system nor to any mixture of these phases. Crystallization of films in a divergent electron beam confirmed the results of the phase analysis performed using the model atomic radial distribution functions.

  16. Indium phosphide solar cells - Recent developments and estimated performance in space

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, David J.

    1990-01-01

    The current status of indium phosphide solar cell research is reviewed. In the NASA research program, efficiencies of 18.8 percent were achieved for standard n/p homojunction InP cells while 17 percent was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 percent are feasible. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 percent.

  17. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    NASA Technical Reports Server (NTRS)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  18. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  19. Scaling Mesa Indium Phosphide DHBTs to Record Bandwidths

    NASA Astrophysics Data System (ADS)

    Lobisser, Evan

    Indium phosphide heterojunction bipolar transistors are able to achieve higher bandwidths at a given feature size than transistors in the Silicon material system for a given feature size. Indium phosphide bipolar transistors demonstrate higher breakdown voltages at a given bandwidth than both Si bipolars and field effect transistors in the InP material system. The high bandwidth of InP HBTs results from both intrinsic material parameters and bandgap engineering through epitaxial growth. The electron mobility in the InGaAs base and saturation velocity in the InP collector are both approximately three times higher than their counterparts in the SiGe material system. Resistance of the base can be made very low due to the large offset in the valence band between the InP emitter and the InGaAs base, which allows the base to be doped on the order of 1020 cm-3 with negligible reduction in emitter injection efficiency. This thesis deals with type-I, NPN dual-heterojunction bipolar transistors. The emitters are InP, and the base is InGaAs. There is a thin (˜ 10 nm) n-type InGaAs "setback" region, followed by a chirped superlattice InGaAs/InAlAs grade to the InP collector. The setback, grade, and collector are all lightly doped n-type. The emitter and collector are contacted through thin (˜ 5 nm) heavily doped n-type InGaAs layers to reduce contact resistivity. The primary focus of this work is increasing the bandwidth of InP HBTs through the proportional scaling of the device dimensions, both layer thicknesses and junction areas, as well as the reduction of the contact resistivities associated with the transistor. Essentially, all RC time constants and transit times must be reduced by a factor of two to double a transistor's bandwidth. Chapter 2 describes in detail the scaling laws and design principles for high frequency bipolar transistor design. A low-stress, blanket sputter deposited composite emitter metal process was developed. Refractory metal base contacts were

  20. Molecular beam epitaxy growth and characterization of dysprosium phosphide and dysprosium arsenide in gallium arsenide and gallium phosphide

    NASA Astrophysics Data System (ADS)

    Lee, Paul Piyawong

    The ability to grow thermally stable Schottky/ohmic contacts and buried, epitaxial metallic or semimetallic layers on semiconductors has many potential applications in novel device structures. Many rare earth group-V compounds with the sodium chloride structure possess the properties that make them potential candidates for stable contacts, buried layers, and other applications. In this work, two novel rare earth compounds, namely dysprosium phosphide (DyP) and dysprosium arsenide (DyAs) have been studied for high temperature ohmic/Schottky contacts to III-V semiconductors as well as for buried metal layers in semiconductor/metal/semiconductor structures. DyP and DyAs have been grown by molecular beam epitaxy on GaAs and GaP substrates. Both DyP and DyAs display metallic behavior and have room temperature resistivities of 8 x 10--5 and 1 x 10--4 Ocm, respectively. The electron concentrations for DyP and DyAs are about 4 x 1020 and 1 x 1021 cm--3, respectively. High quality DyP films as determined by XRD, AFM, and TEM can be achieved at a wide range of substrate temperatures (500°C to 600°C) with excess phosphorus pressure. Unlike most rare earth-group V compounds, DyP films are stable in air with no sign of oxidation. DyP films deposited on n-type GaAs and GaP exhibit Schottky behavior with room temperature barrier heights of 0.83 and 0.90 eV, respectively, with ideality factors close to unity and low reverse bias leakage current densities. These contacts are stable up to 250°C and 350°C for GaAs and GaP, respectively. DyAs films on the other hand, oxidize in air and display weak Schottky behavior on n-type GaAs. DyP has been grown as buried layers in both GaAs/DyP/GaAs and GaAs/DyP/GaP structures. Although high quality DyP layers have been achieved, the GaAs overlayers contain defects such as twins. The poor wetting of GaAs on DyP and the crystal symmetry between the two materials are responsible for the three-dimensional growth and the defects found in the Ga

  1. Heteroepitaxy of group-III phosphides on silicon

    NASA Astrophysics Data System (ADS)

    Sukidi, Nkadi

    The objective of this thesis is to advance fundamental understanding of heteroepitaxial processes. The approach taken is real-time optical monitoring of growth rate and surface composition in conjunction with ex-situ characterization of the evolution of surface topography and microstructure at various stages of nucleation, island growth, coalescence, and contiguous film growth of group III phosphides on silicon substrates. The deposition method, pulsed chemical beam epitaxy (PCBE), chosen for this investigation, affords ballistic beams of source vapor molecules, such as triethylgallium (TEG), trimethylindium (TMI), and tertiary-butylphosphine (TBP) which mix and interact on the surface of the heated substrate. Therefore, gas phase reactions and transport do not complicate the analysis of the time-dependent optical signal, and ambient effects on the signal-to-noise ratio are absent. Primary in-situ methods of optical real-time process monitoring employed here are p-polarized reflectance (PR) and laser light scattering (LLS). Background information, experimental details, data analysis, and discussions of the results of this investigation are presented in the following order: (1) introduction, (2) general experimental procedure, (3) methods of surface temperature measurements, (4) investigation of initial stages of heteroepitaxy of GaP on silicon, (5) initial results of epitaxial layer overgrowth (ELO) of GaP on SiOsb2-masked silicon substrates, (6) investigation of steady-state PCBE of GaP on Si including (i) heteroepitaxy of GaP on Si(100), (ii) real-time monitoring of steady-state PCBE by PR, (iii) molecular layer epitaxy of real-time optical process monitoring, and (iv) real-time monitoring of kinetics of steady-state GaP growth, and (7) Gasb{x}Insb{1-x}P/GaP heterostructures on Si (100). The introduction encompasses (a) a review of the literature regarding relevant prior work, and (b) description of CBE, PR, and LLS. This is followed by general experimental

  2. Nickel Phosphide as a Copper Free Back Contact for CdTe-Based Solar Cells

    NASA Astrophysics Data System (ADS)

    Sunderland, Brian; Gupta, Akhlesh; Compaan, Alvin D.

    2002-03-01

    Nickel phosphide back contacts were deposited onto polycrystalline, thin-film, CdS/CdTe solar cells using DC magnetron sputtering. The effects of the etching procedure, substrate temperature, deposition duration, post-deposition diffusion temperature, and ambient on the initial performance and on the long term stability of the devices were studied. We found that the initial performance of nickel phosphide contacts was lower than typical Cu-based back contacts. However, the stability of the cells at open circuit under one-sun light soak for several months is better than for our standard contact with evaporated Cu and Au. The use of sputtered graphite as an interfacial layer improved the performance. Average efficiencies of over 8.6were achieved. The excellent stability makes Ni2P an attractive candidate for a Cu-free back contact to CdTe-based solar cells. Work supported by NREL and by NSF-REU.

  3. Successful management of aluminium phosphide poisoning using intravenous lipid emulsion: Report of two cases

    PubMed Central

    Baruah, Udismita; Sahni, Ameeta; Sachdeva, Harish C.

    2015-01-01

    Aluminum phosphide (ALP) is a cheap, easily available agricultural pesticide which causes lethal poisoning by liberation of phosphine and inhibition of cytochrome c oxidase thereby leading to cellular hypoxia. Although there is no known specific antidote, clinical trials are still going on. We present here two cases of ALP poisoning who were successfully managed by treatment with lipid emulsion and intravenous magnesium sulfate. PMID:26816450

  4. Ultra-fast mechanochemical synthesis of boron phosphides, BP and B12P2.

    PubMed

    Mukhanov, Vladimir A; Vrel, Dominique; Sokolov, Petr S; Le Godec, Yann; Solozhenko, Vladimir L

    2016-06-21

    Here we propose a new approach to the synthesis of single-phase boron phosphides (BP and B12P2) by mechanochemical reactions between boron phosphate and magnesium/magnesium diboride in the presence of an inert diluent (sodium chloride). The proposed method is characterized by the simplicity of implementation, high efficiency, low cost of the product, and good perspectives for large-scale production.

  5. Cobalt phosphide nanowires: an efficient electrocatalyst for enzymeless hydrogen peroxide detection

    NASA Astrophysics Data System (ADS)

    Liu, Danni; Chen, Tao; Zhu, Wenxin; Cui, Liang; Asiri, Abdullah M.; Lu, Qun; Sun, Xuping

    2016-08-01

    In this letter, we demonstrate for the first time that cobalt phosphide nanowires (CoP NWs) exhibit remarkable catalytic activity toward electrochemical detection of hydrogen peroxide (H2O2). As an enzymeless H2O2 sensor, such CoP NWs show a fast amperometric response within 5 s and a low detection limit of 0.48 μM. In addition, this nonenzymatic sensor displays good selectivity, long-term stability and excellent reproducibility.

  6. Hepatotoxicity due to zinc phosphide poisoning in two patients: role of N-acetylcysteine.

    PubMed

    Oghabian, Zohreh; Afshar, Arefeh; Rahimi, Hamid Reza

    2016-08-01

    Zinc phosphide (Zn3P2/ZnP) is used as a rodenticide. The most common signs of toxicity are nausea, vomiting, hypotension, and metabolic acidosis; patients presenting such signs are referred to the emergency department (ED) of the hospitals. Therefore, this study aimed to report two cases of hepatotoxicity following accidental and intentional ZnP poisoning and successful management with N-acetylcysteine (NAC). PMID:27525081

  7. Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function.

    PubMed

    Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N

    2013-07-19

    Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate. PMID:23787695

  8. Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function.

    PubMed

    Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N

    2013-07-19

    Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

  9. Evaluation of Metal Phosphide Nanocrystals as Anode Materials for Na-ion Batteries.

    PubMed

    Walter, Marc; Bodnarchuk, Maryna I; Kravchyk, Kostiantyn V; Kovalenko, Maksym V

    2015-01-01

    Sodium-ion batteries (SIBs) are potential low-cost alternatives to lithium-ion batteries (LIBs) because of the much greater natural abundance of sodium salts. However, developing high-performance electrode materials for SIBs is a challenging task, especially due to the ∼50% larger ionic radius of the Na(+) ion compared to Li(+), leading to vastly different electrochemical behavior. Metal phosphides such as FeP, CoP, NiP(2), and CuP(2) remain unexplored as electrode materials for SIBs, despite their high theoretical charge storage capacities of 900-1300 mAh g(-1). Here we report on the synthesis of metal phosphide nanocrystals (NCs) and discuss their electrochemical properties as anode materials for SIBs, as well as for LIBs. We also compare the electrochemical characteristics of phosphides with their corresponding sulfides, using the environmentally benign iron compounds, FeP and FeS(2), as a case study. We show that despite the appealing initial charge storage capacities of up to 1200 mAh g(-1), enabled by effective nanosizing of the active electrode materials, further work toward optimization of the electrode/electrolyte pair is needed to improve the electrochemical performance upon cycling. PMID:26842319

  10. Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function

    NASA Astrophysics Data System (ADS)

    Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N.

    2013-07-01

    Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

  11. 7 CFR 4288.110 - Applicant eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE PAYMENT PROGRAMS Advanced Biofuel Payment Program... requirements associated with advanced biofuel producer eligibility, biofuel eligibility, eligibility... not eligible for this Program. (a) Eligible producer. The applicant must be an advanced...

  12. 7 CFR 4288.110 - Applicant eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE PAYMENT PROGRAMS Advanced Biofuel Payment Program... requirements associated with advanced biofuel producer eligibility, biofuel eligibility, eligibility... not eligible for this Program. (a) Eligible producer. The applicant must be an advanced...

  13. Engineering absorption and blackbody radiation in the far-infrared with surface phonon polaritons on gallium phosphide

    SciTech Connect

    Streyer, W.; Law, S.; Rosenberg, A.; Wasserman, D.; Roberts, C.; Podolskiy, V. A.; Hoffman, A. J.

    2014-03-31

    We demonstrate excitation of surface phonon polaritons on patterned gallium phosphide surfaces. Control over the light-polariton coupling frequencies is demonstrated by changing the pattern periodicity and used to experimentally determine the gallium phosphide surface phonon polariton dispersion curve. Selective emission via out-coupling of thermally excited surface phonon polaritons is experimentally demonstrated. Samples are characterized experimentally by Fourier transform infrared reflection and emission spectroscopy, and modeled using finite element techniques and rigorous coupled wave analysis. The use of phonon resonances for control of emissivity and excitation of bound surface waves offers a potential tool for the exploration of long-wavelength Reststrahlen band frequencies.

  14. Essential elucidation for preparation of supported nickel phosphide upon nickel phosphate precursor

    SciTech Connect

    Liu, Xuguang; Xu, Lei; Zhang, Baoquan

    2014-04-01

    Preparation of supported nickel phosphide (Ni{sub 2}P) depends on nickel phosphate precursor, generally related to its chemical composition and supports. Study of this dependence is essential and meaningful for the preparation of supported Ni{sub 2}P with excellent catalytic activity. The chemical nature of nickel phosphate precursor is revealed by Raman and UV–vis spectra. It is found that initial P/Ni mole ratio ≥0.8 prohibits the Ni-O-Ni bridge bonding (i.e., nickel oxide). This chemical bonding will not result in Ni{sub 2}P structure, verified by XRD characterization results. The alumina (namely, γ-Al{sub 2}O{sub 3}, θ-Al{sub 2}O{sub 3}, or α-Al{sub 2}O{sub 3}) with distinct physiochemical properties also results in diverse chemical nature of nickel phosphate, and then different nickel phosphides. The influence of alumina support on producing Ni{sub 2}P was explained by the theory of surface energy heterogeneity, calculated by the NLDFT method based on N{sub 2}-sorption isotherm. The uniform surface energy of α-Al{sub 2}O{sub 3} results only in the nickel phosphosate precursor and thus the Ni{sub 2}P phase. - Graphical abstract: Surface energy heterogeneity in alumina (namely α-Al{sub 2}O{sub 3}, θ-Al{sub 2}O{sub 3}, and γ-Al{sub 2}O{sub 3}) supported multi-oxidic precursors with different reducibilities and thus diverse nickel phosphides (i.e., Ni{sub 3}P, Ni{sub 12}P{sub 5}, Ni{sub 2}P). - Highlights: • Preparing pure Ni{sub 2}P. • Elucidating nickel phosphate precursor. • Associating with surface energy.

  15. An approach to preparing porous and hollow metal phosphides with higher hydrodesulfurization activity

    SciTech Connect

    Song Limin; Zhang Shujuan; Wei Qingwu

    2011-06-15

    This paper describes an effective method for the synthesis of metal phosphides. Bulk and supported Ni{sub 2}P, Cu{sub 3}P, and CoP were prepared by thermal treatment of metal and the amorphous red phosphorus mixtures. Porous and hollow Ni{sub 2}P particles were also synthesized successfully using this method. The structural properties of these products are investigated using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), inductively coupled plasma (ICP-AES) and X-ray photoemission spectroscopy (XPS). A rational mechanism was proposed for the selective formation of Ni{sub 2}P particles. In experimental conditions, the Ni{sub 2}P/SiO{sub 2} catalyst exhibits excellent hydrodesulfurization (HDS) activity for dibenzothiophene (DBT). - Graphical abstract: Bulk and supported Ni{sub 2}P, Cu{sub 3}P, and CoP were prepared by thermal treatment of their metal and amorphous red phosphorus mixtures. Porous and hollow Ni{sub 2}P particles were successfully synthesized by this method also. In the experimental condition, a Ni{sub 2}P/SiO{sub 2} catalyst exhibits excellent hydrodesulfurization activity for dibenzothiophene. Highlights: > A new synthetic route by heat treating mixtures of metal and red phosphorus in flowing N{sub 2} to prepare corresponding metal phosphides. > Porous and hollow Ni{sub 2}P particles may successfully be obtained using the route. > It is very easy to synthesize other bulk and supported metal phosphides using the mixing of bulk and supported metal and red phosphorus by the method. > The Ni{sub 2}P/SiO{sub 2} catalyst synthesized by the route shows a good HDS of dibenzothiophene. > Its operation is simple (only heat treating pure metal and red phosphorus), and the reaction time is short (only 0.5 h).

  16. Cobalt phosphide nanowall array as an efficient 3D catalyst electrode for methanol electro-oxidation

    NASA Astrophysics Data System (ADS)

    Liu, Danni; Lu, Wenbo; Wang, Kunyang; Du, Gu; Asiri, Abdullah M.; Lu, Qun; Sun, Xuping

    2016-11-01

    In this letter, we report on the use of a cobalt phosphide nanowall array on conductive carbon cloth (CoP NA/CC) as an efficient catalyst electrode for methanol electro-oxidation under alkaline conditions. This CoP NA/CC achieves a current density of 96 mA cm–2 toward 0.5 M methanol at 0.5 V (versus a saturated calomel electrode (SCE)) in 1 M KOH. Moreover, this electrode exhibits superior stability and 93% of the initial anodic current density can be retained after 1000 cyclic voltammetry cycles when re-measured in new electrolyte.

  17. An efficient bifunctional electrocatalyst for water splitting based on cobalt phosphide

    NASA Astrophysics Data System (ADS)

    Yang, Libin; Qi, Honglan; Zhang, Chengxiao; Sun, Xuping

    2016-06-01

    The development of highly efficient electrocatalysts for water splitting is critical for various renewable-energy technologies. In this letter, we demonstrate a cobalt phosphide nanowire array grown on a Ti mesh (CoP/TM) behaving as a bifunctional electrocatalyst for water splitting. The CoP/TM electrode delivers 10 mA cm-2 at an overpotential of 72 mV for the hydrogen evolution reaction (HER) and 310 mV for the oxygen evolution reaction (OER) in 1.0 M KOH. Furthermore, its corresponding two-electrode alkaline electrolyzer displays 10 mA cm-2 at 1.64 V.

  18. Cobalt phosphide nanowall array as an efficient 3D catalyst electrode for methanol electro-oxidation.

    PubMed

    Liu, Danni; Lu, Wenbo; Wang, Kunyang; Du, Gu; Asiri, Abdullah M; Lu, Qun; Sun, Xuping

    2016-11-01

    In this letter, we report on the use of a cobalt phosphide nanowall array on conductive carbon cloth (CoP NA/CC) as an efficient catalyst electrode for methanol electro-oxidation under alkaline conditions. This CoP NA/CC achieves a current density of 96 mA cm(-2) toward 0.5 M methanol at 0.5 V (versus a saturated calomel electrode (SCE)) in 1 M KOH. Moreover, this electrode exhibits superior stability and 93% of the initial anodic current density can be retained after 1000 cyclic voltammetry cycles when re-measured in new electrolyte. PMID:27671347

  19. An efficient bifunctional electrocatalyst for water splitting based on cobalt phosphide

    NASA Astrophysics Data System (ADS)

    Yang, Libin; Qi, Honglan; Zhang, Chengxiao; Sun, Xuping

    2016-06-01

    The development of highly efficient electrocatalysts for water splitting is critical for various renewable-energy technologies. In this letter, we demonstrate a cobalt phosphide nanowire array grown on a Ti mesh (CoP/TM) behaving as a bifunctional electrocatalyst for water splitting. The CoP/TM electrode delivers 10 mA cm‑2 at an overpotential of 72 mV for the hydrogen evolution reaction (HER) and 310 mV for the oxygen evolution reaction (OER) in 1.0 M KOH. Furthermore, its corresponding two-electrode alkaline electrolyzer displays 10 mA cm‑2 at 1.64 V.

  20. Theoretical Investigations on the Elastic and Thermodynamic Properties of Rhenium Phosphide

    NASA Astrophysics Data System (ADS)

    Wei, Qun; Yan, Haiyan; Zhu, Xuanmin; Lin, Zhengzhe; Yao, Ronghui

    2016-01-01

    Structural, mechanical, and electronic properties of orthorhombic rhenium phosphide (Re2P) are systematically investigated by using first principles calculations. The elastic constants and anisotropy of elastic properties are obtained. The metallic character of Re2P is demonstrated by density of state calculations. The quasi-harmonic Debye model is applied to the study of the thermodynamic properties. The thermal expansion, heat capacities, and Grüneisen parameter on the temperature and pressure have been determined as a function of temperature and pressure in the pressure range from 0 to 100 GPa and the temperature range from 0 to 1600 K.

  1. Cobalt phosphide nanowall array as an efficient 3D catalyst electrode for methanol electro-oxidation.

    PubMed

    Liu, Danni; Lu, Wenbo; Wang, Kunyang; Du, Gu; Asiri, Abdullah M; Lu, Qun; Sun, Xuping

    2016-11-01

    In this letter, we report on the use of a cobalt phosphide nanowall array on conductive carbon cloth (CoP NA/CC) as an efficient catalyst electrode for methanol electro-oxidation under alkaline conditions. This CoP NA/CC achieves a current density of 96 mA cm(-2) toward 0.5 M methanol at 0.5 V (versus a saturated calomel electrode (SCE)) in 1 M KOH. Moreover, this electrode exhibits superior stability and 93% of the initial anodic current density can be retained after 1000 cyclic voltammetry cycles when re-measured in new electrolyte.

  2. UV laser micromachining of silicon, indium phosphide and lithium niobate for telecommunications applications

    NASA Astrophysics Data System (ADS)

    Greuters, Jako; Rizvi, Nadeem H.

    2003-03-01

    The laser micromachining characteristics of indium phosphide, lithium niobate and silicon have been characterised using a 355nm neodymium vanadate laser and 193nm and 248nm excimer lasers. Etch rates for these materials are presented at the different laser wavelengths. High quality cutting of the three materials is demonstrated with the 355nm laser and an excimer laser mask projection method is subsequently used to micromachine precision V-grooves as fibre placement structures. Silicon microbenches, used for the integration of multiple-function devices, are also produced using the 355nm laser.

  3. Infrared reflection spectra in contactless nondestructive measurements of the electron density and mobility in indium phosphide

    SciTech Connect

    Il'in, M.A.; Karasev, P.Yu.; Denisova, N.A.; Rezvov, A.V.; Tyurina, S.V.

    1988-07-01

    On the basis of numerical calculations and experimental studies we analyze the possibilities of measuring the electrophysical parameters of indium phosphide by means of infrared reflection spectra at wavelengths ranging from 5 to 200 /mu/m. We demonstrate that contactless nondestructive measurements of the electron density in the range 10/sup 16/-10/sup 20/ cm/sup /minus/3/ can be made with a relative error not exceeding 15%, and of mobility with a relative error not exceeding 25%. A nomogram method is presented for rapid conversion of data form infrared reflection spectra into the parameters being measured.

  4. Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

    1987-01-01

    Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

  5. A Flexible Electrode Based on Iron Phosphide Nanotubes for Overall Water Splitting.

    PubMed

    Yan, Ya; Xia, Bao Yu; Ge, Xiaoming; Liu, Zhaolin; Fisher, Adrian; Wang, Xin

    2015-12-01

    The design of cheap and efficient water splitting systems for sustainable hydrogen production has attracted increasing attention. A flexible electrode, based on carbon cloth substrate and iron phosphide nanotubes coated with an iron oxide/phosphate layer, is shown to catalyze overall water splitting. The as-prepared flexible electrode demonstrates remarkable electrocatalytic activity for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) at modest overpotentials. The surface iron oxide/phosphate, which is formed in situ, is proposed to improve the HER activity by facilitating the water-dissociation step and serves directly as the catalytically-active component for the OER process.

  6. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    PubMed

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

  7. ANALYSIS OF THE WATER-SPLITTING CAPABILITIES OF GALLIUM INDIUM PHOSPHIDE NITRIDE (GaInPN)

    SciTech Connect

    Head, J.; Turner, J.

    2007-01-01

    With increasing demand for oil, the fossil fuels used to power society’s vehicles and homes are becoming harder to obtain, creating pollution problems and posing hazard’s to people’s health. Hydrogen, a clean and effi cient energy carrier, is one alternative to fossil fuels. Certain semiconductors are able to harness the energy of solar photons and direct it into water electrolysis in a process known as photoelectrochemical water-splitting. P-type gallium indium phosphide (p-GaInP2) in tandem with GaAs is a semiconductor system that exhibits water-splitting capabilities with a solar-tohydrogen effi ciency of 12.4%. Although this material is effi cient at producing hydrogen through photoelectrolysis it has been shown to be unstable in solution. By introducing nitrogen into this material, there is great potential for enhanced stability. In this study, gallium indium phosphide nitride Ga1-yInyP1-xNx samples were grown using metal-organic chemical vapor deposition in an atmospheric-pressure vertical reactor. Photocurrent spectroscopy determined these materials to have a direct band gap around 2.0eV. Mott-Schottky analysis indicated p-type behavior with variation in fl atband potentials with varied frequencies and pH’s of solutions. Photocurrent onset and illuminated open circuit potential measurements correlated to fl atband potentials determined from previous studies. Durability analysis suggested improved stability over the GaInP2 system.

  8. Three-dimensional interconnected nickel phosphide networks with hollow microstructures and desulfurization performance

    SciTech Connect

    Zhang, Shuna; Zhang, Shujuan; Song, Limin; Wu, Xiaoqing; Fang, Sheng

    2014-05-01

    Graphical abstract: Three-dimensional interconnected nickel phosphide networks with hollow microstructures and desulfurization performance. - Highlights: • Three-dimensional Ni{sub 2}P has been prepared using foam nickel as a template. • The microstructures interconnected and formed sponge-like porous networks. • Three-dimensional Ni{sub 2}P shows superior hydrodesulfurization activity. - Abstract: Three-dimensional microstructured nickel phosphide (Ni{sub 2}P) was fabricated by the reaction between foam nickel (Ni) and phosphorus red. The as-prepared Ni{sub 2}P samples, as interconnected networks, maintained the original mesh structure of foamed nickel. The crystal structure and morphology of the as-synthesized Ni{sub 2}P were characterized by X-ray diffraction, scanning electron microscopy, automatic mercury porosimetry and X-ray photoelectron spectroscopy. The SEM study showed adjacent hollow branches were mutually interconnected to form sponge-like networks. The investigation on pore structure provided detailed information for the hollow microstructures. The growth mechanism for the three-dimensionally structured Ni{sub 2}P was postulated and discussed in detail. To investigate its catalytic properties, SiO{sub 2} supported three-dimensional Ni{sub 2}P was prepared successfully and evaluated for the hydrodesulfurization (HDS) of dibenzothiophene (DBT). DBT molecules were mostly hydrogenated and then desulfurized by Ni{sub 2}P/SiO{sub 2}.

  9. Performance enhancement of a graphene-zinc phosphide solar cell using the electric field-effect.

    PubMed

    Vazquez-Mena, Oscar; Bosco, Jeffrey P; Ergen, O; Rasool, Haider I; Fathalizadeh, Aidin; Tosun, Mahmut; Crommie, Michael; Javey, Ali; Atwater, Harry A; Zettl, Alex

    2014-08-13

    The optical transparency and high electron mobility of graphene make it an attractive material for photovoltaics. We present a field-effect solar cell using graphene to form a tunable junction barrier with an Earth-abundant and low cost zinc phosphide (Zn3P2) thin-film light absorber. Adding a semitransparent top electrostatic gate allows for tuning of the graphene Fermi level and hence the energy barrier at the graphene-Zn3P2 junction, going from an ohmic contact at negative gate voltages to a rectifying barrier at positive gate voltages. We perform current and capacitance measurements at different gate voltages in order to demonstrate the control of the energy barrier and depletion width in the zinc phosphide. Our photovoltaic measurements show that the efficiency conversion is increased 2-fold when we increase the gate voltage and the junction barrier to maximize the photovoltaic response. At an optimal gate voltage of +2 V, we obtain an open-circuit voltage of V oc = 0.53 V and an efficiency of 1.9% under AM 1.5 1-sun solar illumination. This work demonstrates that the field effect can be used to modulate and optimize the response of photovoltaic devices incorporating graphene.

  10. 7 CFR 1738.16 - Eligible entities.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... provide, broadband services in eligible rural communities. (1) Types of eligible entities include... services to the eligible rural community. RUS will determine whether the commitment is sufficient...

  11. Report on Institutional Eligibility.

    ERIC Educational Resources Information Center

    George Washington Univ., Washington, DC. Inst. for Educational Leadership.

    The federal government has traditionally relied on a variety of private accrediting bodies and state chartering and licensing authorities for determining eligibility and exercising direct supervision and consumer protection in education. As Federal financial assistance directly to students has expanded (3 million students received $6.4 million in…

  12. Transition Metal Phosphide Nanoparticles Supported on SBA-15 as Highly Selective Hydrodeoxygenation Catalysts for the Production of Advanced Biofuels.

    PubMed

    Yang, Yongxing; Ochoa-Hernández, Cristina; de la Peña O'Shea, Víctor A; Pizarro, Patricia; Coronado, Juan M; Serrano, David P

    2015-09-01

    A series of catalysts constituted by nanoparticles of transition metal (M = Fe, Co, Ni and Mo) phosphides (TMP) dispersed on SBA-15 were synthesized by reduction of the corresponding metal phosphate precursors previously impregnated on the mesostructured support. All the samples contained a metal-loading of 20 wt% and with an initial M/P mole ratio of 1, and they were characterized by X-ray diffraction (XRD), N2 sorption, H2-TPR and transmission electron microscopy (TEM). Metal phosphide nanocatalysts were tested in a high pressure continuous flow reactor for the hydrodeoxygenation (HDO) of a methyl ester blend containing methyl oleate (C17H33-COO-CH3) as main component (70%). This mixture constitutes a convenient surrogate of triglycerides present in vegetable oils, and following catalytic hydrotreating yields mainly n-alkanes. The results of the catalytic assays indicate that Ni2P/SBA-15 catalyst presents the highest ester conversion, whereas the transformation rate is about 20% lower for MoP/SBA-15. In contrast, catalysts based on Fe and Co phosphides show a rather limited activity. Hydrocarbon distribution in the liquid product suggests that both hydrodeoxygenation and decarboxylation/decarbonylation reactions occur simultaneously over the different catalysts, although MoP/SBA-15 possess a selectivity towards hydrodeoxygenation exceeding 90%. Accordingly, the catalyst based on MoP affords the highest yield of n-octadecane, which is the preferred product in terms of carbon atom economy. Subsequently, in order to conjugate the advantages of both Ni and Mo phosphides, a series of catalysts containing variable proportions of both metals were prepared. The obtained results reveal that the mixed phosphides catalysts present a catalytic behavior intermediate between those of the monometallic phosphides. Accordingly, only marginal enhancement of the yield of n-octadecane is obtained for the catalysts with a Mo/Ni ratio of 3. Nevertheless, owing to this high selectivity

  13. Transition Metal Phosphide Nanoparticles Supported on SBA-15 as Highly Selective Hydrodeoxygenation Catalysts for the Production of Advanced Biofuels.

    PubMed

    Yang, Yongxing; Ochoa-Hernández, Cristina; de la Peña O'Shea, Víctor A; Pizarro, Patricia; Coronado, Juan M; Serrano, David P

    2015-09-01

    A series of catalysts constituted by nanoparticles of transition metal (M = Fe, Co, Ni and Mo) phosphides (TMP) dispersed on SBA-15 were synthesized by reduction of the corresponding metal phosphate precursors previously impregnated on the mesostructured support. All the samples contained a metal-loading of 20 wt% and with an initial M/P mole ratio of 1, and they were characterized by X-ray diffraction (XRD), N2 sorption, H2-TPR and transmission electron microscopy (TEM). Metal phosphide nanocatalysts were tested in a high pressure continuous flow reactor for the hydrodeoxygenation (HDO) of a methyl ester blend containing methyl oleate (C17H33-COO-CH3) as main component (70%). This mixture constitutes a convenient surrogate of triglycerides present in vegetable oils, and following catalytic hydrotreating yields mainly n-alkanes. The results of the catalytic assays indicate that Ni2P/SBA-15 catalyst presents the highest ester conversion, whereas the transformation rate is about 20% lower for MoP/SBA-15. In contrast, catalysts based on Fe and Co phosphides show a rather limited activity. Hydrocarbon distribution in the liquid product suggests that both hydrodeoxygenation and decarboxylation/decarbonylation reactions occur simultaneously over the different catalysts, although MoP/SBA-15 possess a selectivity towards hydrodeoxygenation exceeding 90%. Accordingly, the catalyst based on MoP affords the highest yield of n-octadecane, which is the preferred product in terms of carbon atom economy. Subsequently, in order to conjugate the advantages of both Ni and Mo phosphides, a series of catalysts containing variable proportions of both metals were prepared. The obtained results reveal that the mixed phosphides catalysts present a catalytic behavior intermediate between those of the monometallic phosphides. Accordingly, only marginal enhancement of the yield of n-octadecane is obtained for the catalysts with a Mo/Ni ratio of 3. Nevertheless, owing to this high selectivity

  14. Strain tunable electronic and magnetic properties of pristine and semihydrogenated hexagonal boron phosphide

    SciTech Connect

    Yu, Jin; Guo, Wanlin

    2015-01-26

    Tunable electromagnetic properties of pristine two-dimensional boron phosphide (h-BP) nanosheet and its semihydrogenated structure were studied by density functional theory computations. In sharp contrast to previously reported tensile strain-induced red shift in two-dimensional semiconductors, the direct gap of h-BP undergoes blue shift under biaxial tensile strain. Once semihydrogenated, the h-BP not only transform from the nonmagnetic semiconductor into metal which is spin-resolved but also exhibits linear response between the magnetic moment and biaxial strain with a slope up to 0.005 μB/1%. These findings provide a simple and effective route to tune the electronic and magnetic properties of h-BP nanostructures in a wide range and should inspire experimental enthusiasm.

  15. Indium phosphide solar cells: status and prospects for use in space

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Brinker, D. J.

    1986-01-01

    The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

  16. The metal-rich sulfides and phosphides of the early transition metals

    SciTech Connect

    Franzen, H.F. |

    1996-06-01

    Early work on the preparation of refractory metal-rich compounds of the early transition metals resulted in the understanding that metal-metal bonding results in a structural variety that plays an important role in the high-temperature chemistry of these systems. The binary metal-rich systems have been thoroughly studied at high temperatures, and the structures of most, if not all, of the refractory sulfides and phosphides are known. More recently new ternary phases have been discovered, and these have been shown to result from distributed fractional site occupation of metal atom sites in complex structures. The extent of metal-metal bonding has been quantified by Extended-Hueckel Tight-Bonding calculations using Mullikan Overlap Populations. Correlations of site occupancy with MOP based upon the DFSO model have been observed. 44 refs.

  17. Sc-Sc bonding in the new ternary phosphide ScNiP

    SciTech Connect

    Kleinke, H.; Franzen, H.F.

    1998-05-01

    The new phosphide ScNiP can be synthesized by arc-melting of ScP and Ni, or by arc-melting of Sc with NiP. The lattice constants, as obtained from the bulk sample, are a = 6.3343(8) {angstrom}, b = 3.7375(7) {angstrom}, c = 7.0917(8), and V = 167.89(4) {angstrom}{sup 3}. ScNiP crystallizes in the Co{sub 2}Si structure type. Although one might assign the trivalent state to Sc, corresponding to a formal ionic formula of Sc{sup 3+}Ni{sup {+-}0}P{sup 3{minus}}, the structure of ScNiP contains Sc-Sc bonds and shows weak metallic properties, as expected based on extended Hueckel calculations.

  18. Molybdenum Disulfide as a Protection Layer and Catalyst for Gallium Indium Phosphide Solar Water Splitting Photocathodes.

    PubMed

    Britto, Reuben J; Benck, Jesse D; Young, James L; Hahn, Christopher; Deutsch, Todd G; Jaramillo, Thomas F

    2016-06-01

    Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties for solar water splitting, but its surface stability is problematic as it undergoes significant chemical and electrochemical corrosion in aqueous electrolytes. Molybdenum disulfide (MoS2) nanomaterials are promising to both protect GaInP2 and to improve catalysis because MoS2 is resistant to corrosion and also possesses high activity for the hydrogen evolution reaction (HER). In this work, we demonstrate that GaInP2 photocathodes coated with thin MoS2 surface protecting layers exhibit excellent activity and stability for solar hydrogen production, with no loss in performance (photocurrent onset potential, fill factor, and light-limited current density) after 60 h of operation. This represents a 500-fold increase in stability compared to bare p-GaInP2 samples tested in identical conditions. PMID:27196435

  19. Synthesis and Superconducting Properties of a Hexagonal Phosphide ScRhP

    NASA Astrophysics Data System (ADS)

    Inohara, Takumi; Okamoto, Yoshihiko; Yamakawa, Youichi; Takenaka, Koshi

    2016-09-01

    We report the synthesis and superconducting properties of the ternary phosphide ScRhP. The crystal structure of ScRhP is determined to be the ordered Fe2P type with the hexagonal Pbar{6}2m space group by powder X-ray diffraction experiments. Resistivity, magnetization, and heat capacity data indicate that ScRhP is a bulk superconductor with a transition temperature Tc of 2 K. This Tc is lower than that of its 5d analogue, ScIrP (Tc = 3.4 K), although ScRhP is found to have larger electronic density of states at the Fermi energy and a higher Debye temperature than those of ScIrP.

  20. Treatment of Aluminium Phosphide Poisoning with a Combination of Intravenous Glucagon, Digoxin and Antioxidant Agents

    PubMed Central

    Oghabian, Zohreh; Mehrpour, Omid

    2016-01-01

    Aluminium phosphide (AlP) is used to protect stored grains from rodents. It produces phosphine gas (PH3), a mitochondrial poison thought to cause toxicity by blocking the cytochrome c oxidase enzyme and inhibiting oxidative phosphorylation, which results in cell death. AlP poisoning has a high mortality rate among humans due to the rapid onset of cardiogenic shock and metabolic acidosis, despite aggressive treatment. We report a 21-year-old male who was referred to the Afzalipour Hospital, Kerman, Iran, in 2015 after having intentionally ingested a 3 g AlP tablet. He was successfully treated with crystalloid fluids, vasopressors, sodium bicarbonate, digoxin, glucagon and antioxidant agents and was discharged from the hospital six days after admission in good clinical condition. For the treatment of AlP poisoning, the combination of glucagon and digoxin with antioxidant agents should be considered. However, evaluation of further cases is necessary to optimise treatment protocols.

  1. Effect of InAlAs window layer on efficiency of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.

  2. Molybdenum Disulfide as a Protection Layer and Catalyst for Gallium Indium Phosphide Solar Water Splitting Photocathodes.

    PubMed

    Britto, Reuben J; Benck, Jesse D; Young, James L; Hahn, Christopher; Deutsch, Todd G; Jaramillo, Thomas F

    2016-06-01

    Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties for solar water splitting, but its surface stability is problematic as it undergoes significant chemical and electrochemical corrosion in aqueous electrolytes. Molybdenum disulfide (MoS2) nanomaterials are promising to both protect GaInP2 and to improve catalysis because MoS2 is resistant to corrosion and also possesses high activity for the hydrogen evolution reaction (HER). In this work, we demonstrate that GaInP2 photocathodes coated with thin MoS2 surface protecting layers exhibit excellent activity and stability for solar hydrogen production, with no loss in performance (photocurrent onset potential, fill factor, and light-limited current density) after 60 h of operation. This represents a 500-fold increase in stability compared to bare p-GaInP2 samples tested in identical conditions.

  3. Treatment of Aluminium Phosphide Poisoning with a Combination of Intravenous Glucagon, Digoxin and Antioxidant Agents

    PubMed Central

    Oghabian, Zohreh; Mehrpour, Omid

    2016-01-01

    Aluminium phosphide (AlP) is used to protect stored grains from rodents. It produces phosphine gas (PH3), a mitochondrial poison thought to cause toxicity by blocking the cytochrome c oxidase enzyme and inhibiting oxidative phosphorylation, which results in cell death. AlP poisoning has a high mortality rate among humans due to the rapid onset of cardiogenic shock and metabolic acidosis, despite aggressive treatment. We report a 21-year-old male who was referred to the Afzalipour Hospital, Kerman, Iran, in 2015 after having intentionally ingested a 3 g AlP tablet. He was successfully treated with crystalloid fluids, vasopressors, sodium bicarbonate, digoxin, glucagon and antioxidant agents and was discharged from the hospital six days after admission in good clinical condition. For the treatment of AlP poisoning, the combination of glucagon and digoxin with antioxidant agents should be considered. However, evaluation of further cases is necessary to optimise treatment protocols. PMID:27606117

  4. Treatment of Aluminium Phosphide Poisoning with a Combination of Intravenous Glucagon, Digoxin and Antioxidant Agents.

    PubMed

    Oghabian, Zohreh; Mehrpour, Omid

    2016-08-01

    Aluminium phosphide (AlP) is used to protect stored grains from rodents. It produces phosphine gas (PH3), a mitochondrial poison thought to cause toxicity by blocking the cytochrome c oxidase enzyme and inhibiting oxidative phosphorylation, which results in cell death. AlP poisoning has a high mortality rate among humans due to the rapid onset of cardiogenic shock and metabolic acidosis, despite aggressive treatment. We report a 21-year-old male who was referred to the Afzalipour Hospital, Kerman, Iran, in 2015 after having intentionally ingested a 3 g AlP tablet. He was successfully treated with crystalloid fluids, vasopressors, sodium bicarbonate, digoxin, glucagon and antioxidant agents and was discharged from the hospital six days after admission in good clinical condition. For the treatment of AlP poisoning, the combination of glucagon and digoxin with antioxidant agents should be considered. However, evaluation of further cases is necessary to optimise treatment protocols. PMID:27606117

  5. High-efficiency indium tin oxide/indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

    1989-01-01

    Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

  6. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greater than 16 percent AMO) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AMO efficiency at 25 C.

  7. Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Landis, G. A.

    1991-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.

  8. Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.

    1990-01-01

    Metalorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greaater than 16 percent AM0) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AM0 efficiency at 25 C.

  9. An approach to preparing porous and hollow metal phosphides with higher hydrodesulfurization activity

    NASA Astrophysics Data System (ADS)

    Song, Limin; Zhang, Shujuan; Wei, Qingwu

    2011-06-01

    This paper describes an effective method for the synthesis of metal phosphides. Bulk and supported Ni 2P, Cu 3P, and CoP were prepared by thermal treatment of metal and the amorphous red phosphorus mixtures. Porous and hollow Ni 2P particles were also synthesized successfully using this method. The structural properties of these products are investigated using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), inductively coupled plasma (ICP-AES) and X-ray photoemission spectroscopy (XPS). A rational mechanism was proposed for the selective formation of Ni 2P particles. In experimental conditions, the Ni 2P/SiO 2 catalyst exhibits excellent hydrodesulfurization (HDS) activity for dibenzothiophene (DBT).

  10. Ab-initio calculations of electronic, transport, and structural properties of boron phosphide

    SciTech Connect

    Ejembi, J. I.; Nwigboji, I. H.; Franklin, L.; Malozovsky, Y.; Zhao, G. L.; Bagayoko, D.

    2014-09-14

    We present results from ab-initio, self-consistent density functional theory calculations of electronic and related properties of zinc blende boron phosphide (zb-BP). We employed a local density approximation potential and implemented the linear combination of atomic orbitals formalism. This technique follows the Bagayoko, Zhao, and Williams method, as enhanced by the work of Ekuma and Franklin. The results include electronic energy bands, densities of states, and effective masses. The calculated band gap of 2.02 eV, for the room temperature lattice constant of a=4.5383 Å, is in excellent agreement with the experimental value of 2.02±0.05 eV. Our result for the bulk modulus, 155.7 GPa, agrees with experiment (152–155 GPa). Our predictions for the equilibrium lattice constant and the corresponding band gap, for very low temperatures, are 4.5269 Å and 2.01 eV, respectively.

  11. Phosphorus-Rich Copper Phosphide Nanowires for Field-Effect Transistors and Lithium-Ion Batteries.

    PubMed

    Li, Guo-An; Wang, Chiu-Yen; Chang, Wei-Chung; Tuan, Hsing-Yu

    2016-09-27

    Phosphorus-rich transition metal phosphide CuP2 nanowires were synthesized with high quality and high yield (∼60%) via the supercritical fluid-liquid-solid (SFLS) growth at 410 °C and 10.2 MPa. The obtained CuP2 nanowires have a high aspect ratio and exhibit a single crystal structure of monoclinic CuP2 without any impurity phase. CuP2 nanowires have progressive improvement for semiconductors and energy storages compared with bulk CuP2. Being utilized for back-gate field effect transistor (FET) measurement, CuP2 nanowires possess a p-type behavior intrinsically with an on/off ratio larger than 10(4) and its single nanowire electrical transport property exhibits a hole mobility of 147 cm(2) V(-1) s(-1), representing the example of a CuP2 transistor. In addition, CuP2 nanowires can serve as an appealing anode material for a lithium-ion battery electrode. The discharge capacity remained at 945 mA h g(-1) after 100 cycles, showing a good capacity retention of 88% based on the first discharge capacity. Even at a high rate of 6 C, the electrode still exhibited an outstanding result with a capacity of ∼600 mA h g(-1). Ex-situ transmission electron microscopy and CV tests demonstrate that the stability of capacity retention and remarkable rate capability of the CuP2 nanowires electrode are attributed to the role of the metal phosphide conversion-type lithium storage mechanism. Finally, CuP2 nanowire anodes and LiFePO4 cathodes were assembled into pouch-type lithium batteries offering a capacity over 60 mA h. The full cell shows high capacity and stable capacity retention and can be used as an energy supply to operate electronic devices such as mobile phones and mini 4WD cars. PMID:27603024

  12. Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

    NASA Astrophysics Data System (ADS)

    Chuang, Chen

    Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

  13. Phosphorus-Rich Copper Phosphide Nanowires for Field-Effect Transistors and Lithium-Ion Batteries.

    PubMed

    Li, Guo-An; Wang, Chiu-Yen; Chang, Wei-Chung; Tuan, Hsing-Yu

    2016-09-27

    Phosphorus-rich transition metal phosphide CuP2 nanowires were synthesized with high quality and high yield (∼60%) via the supercritical fluid-liquid-solid (SFLS) growth at 410 °C and 10.2 MPa. The obtained CuP2 nanowires have a high aspect ratio and exhibit a single crystal structure of monoclinic CuP2 without any impurity phase. CuP2 nanowires have progressive improvement for semiconductors and energy storages compared with bulk CuP2. Being utilized for back-gate field effect transistor (FET) measurement, CuP2 nanowires possess a p-type behavior intrinsically with an on/off ratio larger than 10(4) and its single nanowire electrical transport property exhibits a hole mobility of 147 cm(2) V(-1) s(-1), representing the example of a CuP2 transistor. In addition, CuP2 nanowires can serve as an appealing anode material for a lithium-ion battery electrode. The discharge capacity remained at 945 mA h g(-1) after 100 cycles, showing a good capacity retention of 88% based on the first discharge capacity. Even at a high rate of 6 C, the electrode still exhibited an outstanding result with a capacity of ∼600 mA h g(-1). Ex-situ transmission electron microscopy and CV tests demonstrate that the stability of capacity retention and remarkable rate capability of the CuP2 nanowires electrode are attributed to the role of the metal phosphide conversion-type lithium storage mechanism. Finally, CuP2 nanowire anodes and LiFePO4 cathodes were assembled into pouch-type lithium batteries offering a capacity over 60 mA h. The full cell shows high capacity and stable capacity retention and can be used as an energy supply to operate electronic devices such as mobile phones and mini 4WD cars.

  14. Materials Development for Boron Phosphide Based Neutron Detectors: Final Technical Report

    SciTech Connect

    Edgar, James Howard

    2014-09-12

    The project goal was to improve the quality of boron phosphide (BP) by optimizing its epitaxial growth on single crystal substrates and by producing bulk BP single crystals with low dislocation densities. BP is potentially a good semiconductor for high efficiency solid state neutron detectors by combining neutron capture and charge creation within the same volume. The project strategy was to use newly available single crystal substrates, silicon carbide and aluminum nitride, engineered to produce the best film properties. Substrate variables included the SiC polytype, crystallographic planes, misorientation of the substrate surface (tilt direction and magnitude) from the major crystallographic plane, and surface polarity (Si and C). The best films were (111)BP on silicon-face (0001) 4H-SiC misoriented 4° in the [1-100] direction, and BP on (100) and (111) 3C-SiC/Si; these substrates resulted in films that were free of in-plane twin defects, as determined by x-ray topography. The impact of the deposition temperature was also assessed: increasing the temperature from 1000 °C to 1200 °C produced films that were more ordered and more uniform, and the size of individual grains increased by more than a factor of twenty. The BP films were free of other compounds such as icosahedral boron phosphide (B12P2) over the entire temperature range, as established by Raman spectroscopy. The roughness of the BP films was reduced by increasing the phosphine to diborane ratio from 50 to 200. Bulk crystals were grown by reacting boron dissolved in nickel with phosphorus vapor to precipitate BP. Crystals with dimensions up to 2 mm were produced.

  15. Zinc phosphide

    Integrated Risk Information System (IRIS)

    Zinc phoshide ; CASRN 1314 - 84 - 7 Human health assessment information on a chemical substance is included in the IRIS database only after a comprehensive review of toxicity data , as outlined in the IRIS assessment development process . Sections I ( Health Hazard Assessments for Noncarcinogenic Ef

  16. 20 CFR 645.212 - Who may be served under the general eligibility and noncustodial parent eligibility (primary...

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... eligibility and noncustodial parent eligibility (primary eligibility) provision? 645.212 Section 645.212... general eligibility and noncustodial parent eligibility (primary eligibility) provision? An individual may... and resource criteria (if applicable) specified in the State TANF plan....

  17. 20 CFR 645.212 - Who may be served under the general eligibility and noncustodial parent eligibility (primary...

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... eligibility and noncustodial parent eligibility (primary eligibility) provision? 645.212 Section 645.212... general eligibility and noncustodial parent eligibility (primary eligibility) provision? An individual may... and resource criteria (if applicable) specified in the State TANF plan....

  18. 20 CFR 645.212 - Who may be served under the general eligibility and noncustodial parent eligibility (primary...

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... eligibility and noncustodial parent eligibility (primary eligibility) provision? 645.212 Section 645.212... general eligibility and noncustodial parent eligibility (primary eligibility) provision? An individual may... and resource criteria (if applicable) specified in the State TANF plan....

  19. 7 CFR 1421.302 - Eligible producer and eligible land.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... the 2008 Through 2012 Crop of Wheat, Barley, Oats, and Triticale § 1421.302 Eligible producer and... producer of wheat, barley, oats, or triticale in the 2008 through 2012 crop years. Also, to be an eligible...) Producers who elect to graze 2008 through 2012 crop wheat, barley, oats, or triticale will not be...

  20. 7 CFR 1421.302 - Eligible producer and eligible land.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... the 2008 Through 2012 Crop of Wheat, Barley, Oats, and Triticale § 1421.302 Eligible producer and... producer of wheat, barley, oats, or triticale in the 2008 through 2012 crop years. Also, to be an eligible...) Producers who elect to graze 2008 through 2012 crop wheat, barley, oats, or triticale will not be...

  1. 7 CFR 1421.302 - Eligible producer and eligible land.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... the 2008 Through 2012 Crop of Wheat, Barley, Oats, and Triticale § 1421.302 Eligible producer and... producer of wheat, barley, oats, or triticale in the 2008 through 2012 crop years. Also, to be an eligible...) Producers who elect to graze 2008 through 2012 crop wheat, barley, oats, or triticale will not be...

  2. 7 CFR 1421.302 - Eligible producer and eligible land.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... the 2008 Through 2012 Crop of Wheat, Barley, Oats, and Triticale § 1421.302 Eligible producer and... producer of wheat, barley, oats, or triticale in the 2008 through 2012 crop years. Also, to be an eligible...) Producers who elect to graze 2008 through 2012 crop wheat, barley, oats, or triticale will not be...

  3. 7 CFR 1421.302 - Eligible producer and eligible land.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... the 2008 Through 2012 Crop of Wheat, Barley, Oats, and Triticale § 1421.302 Eligible producer and... producer of wheat, barley, oats, or triticale in the 2008 through 2012 crop years. Also, to be an eligible...) Producers who elect to graze 2008 through 2012 crop wheat, barley, oats, or triticale will not be...

  4. 14 CFR 67.201 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... STANDARDS AND CERTIFICATION Second-Class Airman Medical Certificate § 67.201 Eligibility. To be eligible for a second-class airman medical certificate, and to remain eligible for a second-class airman...

  5. 14 CFR 67.201 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... STANDARDS AND CERTIFICATION Second-Class Airman Medical Certificate § 67.201 Eligibility. To be eligible for a second-class airman medical certificate, and to remain eligible for a second-class airman...

  6. 14 CFR 67.201 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... STANDARDS AND CERTIFICATION Second-Class Airman Medical Certificate § 67.201 Eligibility. To be eligible for a second-class airman medical certificate, and to remain eligible for a second-class airman...

  7. 7 CFR 1709.109 - Eligible projects.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... serving the eligible community; (b) Natural gas distribution or storage facilities and associated equipment and activities serving the eligible community; (c) Petroleum product storage and handling... improve electricity, natural gas, home heating fuels, and other energy services to eligible...

  8. Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

  9. Recent advances in transition metal phosphide nanomaterials: synthesis and applications in hydrogen evolution reaction.

    PubMed

    Shi, Yanmei; Zhang, Bin

    2016-03-21

    The urgent need of clean and renewable energy drives the exploration of effective strategies to produce molecular hydrogen. With the assistance of highly active non-noble metal electrocatalysts, electrolysis of water is becoming a promising candidate to generate pure hydrogen with low cost and high efficiency. Very recently, transition metal phosphides (TMPs) have been proven to be high performance catalysts with high activity, high stability, and nearly ∼100% Faradic efficiency in not only strong acidic solutions, but also in strong alkaline and neutral media for electrochemical hydrogen evolution. In this tutorial review, an overview of recent development of TMP nanomaterials as catalysts for hydrogen generation with high activity and stability is presented. The effects of phosphorus (P) on HER activity, and their synthetic methods of TMPs are briefly discussed. Then we will demonstrate the specific strategies to further improve the catalytic efficiency and stability of TMPs by structural engineering. Making use of TMPs as cocatalysts and catalysts in photochemical and photoelectrochemical water splitting is also discussed. Finally, some key challenges and issues which should not be ignored during the rapid development of TMPs are pointed out. These strategies and challenges of TMPs are instructive for designing other high-performance non-noble metal catalysts.

  10. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

    PubMed Central

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q.

    2016-01-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula. PMID:27307081

  11. Elastic, magnetic and electronic properties of iridium phosphide Ir2P.

    PubMed

    Wang, Pei; Wang, Yonggang; Wang, Liping; Zhang, Xinyu; Yu, Xiaohui; Zhu, Jinlong; Wang, Shanmin; Qin, Jiaqian; Leinenweber, Kurt; Chen, Haihua; He, Duanwei; Zhao, Yusheng

    2016-01-01

    Cubic (space group: Fmm) iridium phosphide, Ir2P, has been synthesized at high pressure and high temperature. Angle-dispersive synchrotron X-ray diffraction measurements on Ir2P powder using a diamond-anvil cell at room temperature and high pressures (up to 40.6 GPa) yielded a bulk modulus of B0 = 306(6) GPa and its pressure derivative B0' = 6.4(5). Such a high bulk modulus attributed to the short and strongly covalent Ir-P bonds as revealed by first - principles calculations and three-dimensionally distributed [IrP4] tetrahedron network. Indentation testing on a well-sintered polycrystalline sample yielded the hardness of 11.8(4) GPa. Relatively low shear modulus of ~64 GPa from theoretical calculations suggests a complicated overall bonding in Ir2P with metallic, ionic, and covalent characteristics. In addition, a spin glass behavior is indicated by magnetic susceptibility measurements. PMID:26905444

  12. Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon.

    PubMed

    Gao, Li; Woo, Robyn L; Liang, Baolai; Pozuelo, Marta; Prikhodko, Sergey; Jackson, Mike; Goel, Niti; Hudait, Mantu K; Huffaker, Diana L; Goorsky, Mark S; Kodambaka, Suneel; Hicks, Robert F

    2009-06-01

    Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to catalyze deposition. For growth at 350 degrees C, about 70% of the wires were vertical, while the remaining ones were distributed in the 3 other <111> directions. The vertical fraction, growth rate, and tapering of the wires increased with temperature and V/III ratio. At 370 degrees C and V/III equal to 200, 100% of the wires were vertical with a density of approximately 1.0 x 10(9) cm(-2) and average dimensions of 3.9 mum in length, 45 nm in base width, and 15 nm in tip width. X-ray diffraction and transmission electron microscopy revealed that the wires were single-crystal zinc blende, although they contained a high density of rotational twins perpendicular to the <111> growth direction. The room temperature photoluminescence spectrum exhibited one peak centered at 912 +/- 10 nm with a FWHM of approximately 60 nm. PMID:19413340

  13. Boron phosphide under pressure: In situ study by Raman scattering and X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Solozhenko, Vladimir L.; Kurakevych, Oleksandr O.; Le Godec, Yann; Kurnosov, Aleksandr V.; Oganov, Artem R.

    2014-07-01

    Cubic boron phosphide, BP, has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab initio calculations. The data on Raman shift as a function of pressure, combined with equation-of-state (EOS) data, allowed us to estimate the Grüneisen parameters of the TO and LO modes of zinc-blende structure, γGTO= 1.26 and γGLO= 1.13, just like in the case of other AIIIBV diamond-like phases, for which γGTO> γGLO≅ 1. We also established that the pressure dependence of the effective electro-optical constant α is responsible for a strong change in relative intensities of the TO and LO modes from ITO/ILO ˜ 0.25 at 0.1 MPa to ITO/ILO ˜ 2.5 at 45 GPa, for which we also find excellent agreement between experiment and theory.

  14. Elastic, magnetic and electronic properties of iridium phosphide Ir2P

    DOE PAGESBeta

    Wang, Pei; Wang, Yonggang; Wang, Liping; Zhang, Xinyu; Yu, Xiaohui; Zhu, Jinlong; Wang, Shanmin; Qin, Jiaqian; Leinenweber, Kurt; Chen, Haihua; et al

    2016-02-24

    Cubic (space group: Fm3¯m) iridium phosphide, Ir2P, has been synthesized at high pressure and high temperature. Angle-dispersive synchrotron X-ray diffraction measurements on Ir2P powder using a diamond-anvil cell at room temperature and high pressures (up to 40.6 GPa) yielded a bulk modulus of B0 = 306(6) GPa and its pressure derivative B0'= 6.4(5). Such a high bulk modulus attributed to the short and strongly covalent Ir-P bonds as revealed by first – principles calculations and three-dimensionally distributed [IrP4] tetrahedron network. Indentation testing on a well–sintered polycrystalline sample yielded the hardness of 11.8(4) GPa. Relatively low shear modulus of ~64 GPamore » from theoretical calculations suggests a complicated overall bonding in Ir2P with metallic, ionic, and covalent characteristics. Additionally, a spin glass behavior is indicated by magnetic susceptibility measurements.« less

  15. Boron phosphide under pressure: In situ study by Raman scattering and X-ray diffraction

    SciTech Connect

    Solozhenko, Vladimir L.; Kurakevych, Oleksandr O.; Le Godec, Yann; Kurnosov, Aleksandr V.; Oganov, Artem R.

    2014-07-21

    Cubic boron phosphide, BP, has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B{sub 0} = 174(2) GPa has been established, which is in excellent agreement with our ab initio calculations. The data on Raman shift as a function of pressure, combined with equation-of-state (EOS) data, allowed us to estimate the Grüneisen parameters of the TO and LO modes of zinc-blende structure, γ{sub G}{sup TO }= 1.26 and γ{sub G}{sup LO }= 1.13, just like in the case of other A{sup III}B{sup V} diamond-like phases, for which γ{sub G}{sup TO }> γ{sub G}{sup LO }≅ 1. We also established that the pressure dependence of the effective electro-optical constant α is responsible for a strong change in relative intensities of the TO and LO modes from I{sub TO}/I{sub LO} ∼ 0.25 at 0.1 MPa to I{sub TO}/I{sub LO} ∼ 2.5 at 45 GPa, for which we also find excellent agreement between experiment and theory.

  16. Controlled synthesis and magnetic properties of iron-cobalt-phosphide nanorods.

    PubMed

    Yang, Weiwei; Wu, Xiaoming; Yu, Yongsheng; Yang, Chunhui; Xu, Shichong; Li, Haibo

    2016-09-28

    A simple one-step solution-phase synthesis of iron-cobalt-phosphide ((Fe1-xCox)2P) nanorods (NRs) is reported in this paper. Through the control of the amount of Co in the samples, the crystal structure of (Fe1-xCox)2P NRs changes from a pure Fe-rich hexagonal Fe2P type structure to a mixture of Fe-rich hexagonal Fe2P and Co-rich orthorhombic Co2P type structures. These samples show superparamagnetic behavior at room temperature and ferromagnetic properties at 10 K. When the Co composition is 0.09, the (Fe0.91Co0.09)2P sample has the highest coercivity around 5.74 kOe at 10 K. The current route provides a new and general chemical method for tunable preparation of (Fe1-xCox)2P (x < 0.28) NRs, which are significant for the development of new iron- or cobalt-rich permanent magnet materials without rare-earth or noble metals. PMID:27602987

  17. Planar array antenna with director on indium phosphide substrate for 300GHz wireless link

    NASA Astrophysics Data System (ADS)

    Kanaya, Haruichi; Oda, Tomoki; Iizasa, Naoto; Kato, Kazutoshi

    2016-02-01

    This paper presents a design and fabrication of 1 x 4 one-sided directional slot array antenna with director metal layer on indium phosphide (InP) substrate for 300 GHz wireless link. The floating metal and polyimide dielectric layer are stacked on InP. Antenna is designed on the top metal layer. By optimizing the length of the bottom floating metal layer, one-sided directional radiation can be realized. The branched coplanar wave guide (CPW) transmission line is connected to each antenna element with the same electrical length. The size of the 1 x 4 array antenna is 2,550 µm x 1,217 µm x 18 µm. In order to enhance the gain of forward direction, director metal layer is placed over 83 µm from top metal layer. Simulated realized gain in peak direction of our antenna is 9.23 dBi. The measured center frequency is almost the same as that of the simulation results.

  18. Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties

    SciTech Connect

    Huang, Bing; Zhuang, Houlong L.; Yoon, Mina; Sumpter, Bobby G.; Wei, Su-Huai

    2015-03-03

    We report that the discovery of stable two-dimensional, earth-abundant, semiconducting materials is of great interest and may impact future electronic technologies. By combining global structural prediction and first-principles calculations, we have theoretically discovered several previously unknown semiconducting silicon phosphides (SixPy) monolayers, which could be formed stably at the stoichiometries of y/x ≥1. Unexpectedly, some of these compounds, i.e., P-6m2 Si1P1 and Pm Si1P2, have comparable or even lower formation enthalpies than their previously known bulk allotropes. The band gaps (Eg) of SixPy compounds can be dramatically tuned in an extremely wide range (0< Eg < 3 eV) by simply changing the number of layers or applying an in-plane strain. Furthermore, we find that carrier doping can drive the ground state of C2/m Si1P3 from a nonmagnetic state into a robust half-metallic spin-polarized state, originating from its unique valence band structure, which can extend the use of Si-related compounds for spintronics.

  19. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide.

    PubMed

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H Q

    2016-01-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)-a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula. PMID:27307081

  20. Growth and Photoelectrochemical Energy Conversion of Wurtzite Indium Phosphide Nanowire Arrays.

    PubMed

    Kornienko, Nikolay; Gibson, Natalie A; Zhang, Hao; Eaton, Samuel W; Yu, Yi; Aloni, Shaul; Leone, Stephen R; Yang, Peidong

    2016-05-24

    Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising strategy to absorb solar energy and directly convert it into a dense storage medium in the form of chemical bonds. The continual development and improvement of individual components of PEC systems is critical toward increasing the solar to fuel efficiency of prototype devices. Within this context, we describe a study on the growth of wurtzite indium phosphide (InP) nanowire (NW) arrays on silicon substrates and their subsequent implementation as light-absorbing photocathodes in PEC cells. The high onset potential (0.6 V vs the reversible hydrogen electrode) and photocurrent (18 mA/cm(2)) of the InP photocathodes render them as promising building blocks for high performance PEC cells. As a proof of concept for overall system integration, InP photocathodes were combined with a nanoporous bismuth vanadate (BiVO4) photoanode to generate an unassisted solar water splitting efficiency of 0.5%. PMID:27124203

  1. Growth and Photoelectrochemical Energy Conversion of Wurtzite Indium Phosphide Nanowire Arrays.

    PubMed

    Kornienko, Nikolay; Gibson, Natalie A; Zhang, Hao; Eaton, Samuel W; Yu, Yi; Aloni, Shaul; Leone, Stephen R; Yang, Peidong

    2016-05-24

    Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising strategy to absorb solar energy and directly convert it into a dense storage medium in the form of chemical bonds. The continual development and improvement of individual components of PEC systems is critical toward increasing the solar to fuel efficiency of prototype devices. Within this context, we describe a study on the growth of wurtzite indium phosphide (InP) nanowire (NW) arrays on silicon substrates and their subsequent implementation as light-absorbing photocathodes in PEC cells. The high onset potential (0.6 V vs the reversible hydrogen electrode) and photocurrent (18 mA/cm(2)) of the InP photocathodes render them as promising building blocks for high performance PEC cells. As a proof of concept for overall system integration, InP photocathodes were combined with a nanoporous bismuth vanadate (BiVO4) photoanode to generate an unassisted solar water splitting efficiency of 0.5%.

  2. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

    NASA Astrophysics Data System (ADS)

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q.

    2016-06-01

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.

  3. Elastic, magnetic and electronic properties of iridium phosphide Ir2P

    PubMed Central

    Wang, Pei; Wang, Yonggang; Wang, Liping; Zhang, Xinyu; Yu, Xiaohui; Zhu, Jinlong; Wang, Shanmin; Qin, Jiaqian; Leinenweber, Kurt; Chen, Haihua; He, Duanwei; Zhao, Yusheng

    2016-01-01

    Cubic (space group: Fmm) iridium phosphide, Ir2P, has been synthesized at high pressure and high temperature. Angle-dispersive synchrotron X-ray diffraction measurements on Ir2P powder using a diamond-anvil cell at room temperature and high pressures (up to 40.6 GPa) yielded a bulk modulus of B0 = 306(6) GPa and its pressure derivative B0′ = 6.4(5). Such a high bulk modulus attributed to the short and strongly covalent Ir-P bonds as revealed by first – principles calculations and three-dimensionally distributed [IrP4] tetrahedron network. Indentation testing on a well–sintered polycrystalline sample yielded the hardness of 11.8(4) GPa. Relatively low shear modulus of ~64 GPa from theoretical calculations suggests a complicated overall bonding in Ir2P with metallic, ionic, and covalent characteristics. In addition, a spin glass behavior is indicated by magnetic susceptibility measurements. PMID:26905444

  4. Direct Band Gap Gallium Antimony Phosphide (GaSbxP1-x) Alloys

    NASA Astrophysics Data System (ADS)

    Russell, H. B.; Andriotis, A. N.; Menon, M.; Jasinski, J. B.; Martinez-Garcia, A.; Sunkara, M. K.

    2016-02-01

    Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1-2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1-x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1-x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1-x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields.

  5. Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

    NASA Technical Reports Server (NTRS)

    Deo, Naresh C.

    1990-01-01

    A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

  6. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide.

    PubMed

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H Q

    2016-06-16

    We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)-a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.

  7. Direct Band Gap Gallium Antimony Phosphide (GaSbxP1−x) Alloys

    PubMed Central

    Russell, H. B.; Andriotis, A. N.; Menon, M.; Jasinski, J. B.; Martinez-Garcia, A.; Sunkara, M. K.

    2016-01-01

    Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1–2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1−x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1−x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1−x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields. PMID:26860470

  8. Elastic, magnetic and electronic properties of iridium phosphide Ir2P.

    PubMed

    Wang, Pei; Wang, Yonggang; Wang, Liping; Zhang, Xinyu; Yu, Xiaohui; Zhu, Jinlong; Wang, Shanmin; Qin, Jiaqian; Leinenweber, Kurt; Chen, Haihua; He, Duanwei; Zhao, Yusheng

    2016-02-24

    Cubic (space group: Fmm) iridium phosphide, Ir2P, has been synthesized at high pressure and high temperature. Angle-dispersive synchrotron X-ray diffraction measurements on Ir2P powder using a diamond-anvil cell at room temperature and high pressures (up to 40.6 GPa) yielded a bulk modulus of B0 = 306(6) GPa and its pressure derivative B0' = 6.4(5). Such a high bulk modulus attributed to the short and strongly covalent Ir-P bonds as revealed by first - principles calculations and three-dimensionally distributed [IrP4] tetrahedron network. Indentation testing on a well-sintered polycrystalline sample yielded the hardness of 11.8(4) GPa. Relatively low shear modulus of ~64 GPa from theoretical calculations suggests a complicated overall bonding in Ir2P with metallic, ionic, and covalent characteristics. In addition, a spin glass behavior is indicated by magnetic susceptibility measurements.

  9. Highly stable two-dimensional silicon phosphides: Different stoichiometries and exotic electronic properties

    DOE PAGESBeta

    Huang, Bing; Zhuang, Houlong L.; Yoon, Mina; Sumpter, Bobby G.; Wei, Su-Huai

    2015-03-03

    We report that the discovery of stable two-dimensional, earth-abundant, semiconducting materials is of great interest and may impact future electronic technologies. By combining global structural prediction and first-principles calculations, we have theoretically discovered several previously unknown semiconducting silicon phosphides (SixPy) monolayers, which could be formed stably at the stoichiometries of y/x ≥1. Unexpectedly, some of these compounds, i.e., P-6m2 Si1P1 and Pm Si1P2, have comparable or even lower formation enthalpies than their previously known bulk allotropes. The band gaps (Eg) of SixPy compounds can be dramatically tuned in an extremely wide range (0< Eg < 3 eV) by simply changingmore » the number of layers or applying an in-plane strain. Furthermore, we find that carrier doping can drive the ground state of C2/m Si1P3 from a nonmagnetic state into a robust half-metallic spin-polarized state, originating from its unique valence band structure, which can extend the use of Si-related compounds for spintronics.« less

  10. Characterization and ultrafiltration of semiconductor indium phosphide (InP) wastewater for recycling.

    PubMed

    Wu, M; Sun, D D; Tay, J H

    2005-01-01

    This research work investigated the physical and chemical properties of a new type of wastewater produced from the semiconductor industry. The wastewater generated from indium phosphide (InP) wafer backgrinding and sawing processes was characterized in term of its particle size distribution (PSD), zeta potential, suspended and dissolved solids, total organic carbon, and turbidity. The wastewater contained high concentration of fine InP dusts with a size ranging from 0.07 - 1.44 mm. In spite of its high concentration of suspended solids resulting in high turbidity up to 371 NTU, the wastewater contained very low organic matters (TOC < 2.2 mg l(-1)) and other inorganic impurities (SO4(2-) < 0.21 mg l(-1) and Na+ < 0.16 mg l(-1)). Based on the experimental data collected, the treatment technologies using chemical precipitation and ultrafiltration were applied to the wastewater. Both processes could effectively remove InP particles from the wastewater, however the coagulants in chemical precipitation introduced other ionic contents into the process resulting in difficulties of water recycling in the later stage. In comparison, ultrafiltration was more promising for InP wastewater treatment and recycling. Based on the results of this study, a full-scale UF system was built in a local semiconductor plant and it has successfully reclaimed water from the InP wastes for the past six months without any quality issue being raised.

  11. Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1993-01-01

    The electrical and metallurgical behavior of the Ag-InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10 exp -6 Ohm sq cm range are readily achieved on n-InP (Si: 1.7 x 10 exp 18/cu cm) after sintering at 400 C for several minutes. The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device degradation. An analysis of the sinter-induced metallurgical interactions shows this system to be similar to the well-characterized Au-InP system, albeit with fundamental differences. The similarities include the dissociative diffusion of In, the reaction-suppressing effect of SiO2 capping, and especially, the formation of a phosphide layer at the metal-InP interface. The low post-sinter Rc values in the Ag-InP system may be due to the presence of a AgP2 layer at the metal-InP interface; low values of Rc can be achieved without incurring device degrading metallurgical interactions by introducing a thin AgP2 layer between the InP and the current carrying metallization.

  12. Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

    1990-01-01

    The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

  13. Highly Efficient and Robust Nickel Phosphides as Bifunctional Electrocatalysts for Overall Water-Splitting.

    PubMed

    Li, Jiayuan; Li, Jing; Zhou, Xuemei; Xia, Zhaoming; Gao, Wei; Ma, Yuanyuan; Qu, Yongquan

    2016-05-01

    To search for the efficient non-noble metal based and/or earth-abundant electrocatalysts for overall water-splitting is critical to promote the clean-energy technologies for hydrogen economy. Herein, we report nickel phosphide (NixPy) catalysts with the controllable phases as the efficient bifunctional catalysts for water electrolysis. The phases of NixPy were determined by the temperatures of the solid-phase reaction between the ultrathin Ni(OH)2 plates and NaH2PO2·H2O. The NixPy with the richest Ni5P4 phase synthesized at 325 °C (NixPy-325) delivered efficient and robust catalytic performance for hydrogen evolution reaction (HER) in the electrolytes with a wide pH range. The NixPy-325 catalysts also exhibited a remarkable performance for oxygen evolution reaction (OER) in a strong alkaline electrolyte (1.0 M KOH) due to the formation of surface NiOOH species. Furthermore, the bifunctional NixPy-325 catalysts enabled a highly performed overall water-splitting with ∼100% Faradaic efficiency in 1.0 M KOH electrolyte, in which a low applied external potential of 1.57 V led to a stabilized catalytic current density of 10 mA/cm(2) over 60 h.

  14. Size-dependent magnetic and electrocatalytic properties of nickel phosphide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pan, Yuan; Lin, Yan; Liu, Yunqi; Liu, Chenguang

    2016-03-01

    Nickel phosphide (Ni2P) nanoparticles (NPs) with different sizes were synthesized via thermal decomposition of bis(triphenylphosphine)nickel dichloride precursor in the presence of oleylamine. The size of the as-synthesized Ni2P NPs could easily be controlled by increasing the reaction temperature from 300 to 340 °C. The structure and morphology were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), N2 adsorption-desorption and X-ray photoelectron spectroscopy (XPS). Then the influences of the size of the Ni2P NPs on the magnetic and electrocatalytic properties were investigated systematically. The results indicate that the as-synthesized Ni2P NPs exhibit ferromagnetic characteristic at 5 K. The Ni2P NPs with small size exhibit superparamagnetism and the larger size exhibit ferromagnetic characteristic at 300 K. The blocking temperature, saturation magnetization, remanent magnetization and coercivity increased significantly with the increase of size of Ni2P NPs, indicating the strong size effect of Ni2P NPs for magnetic properties. Electrochemical tests indicate that the catalytic activity can be enhanced by decreasing the size of Ni2P NPs. Due to the larger electrochemical active surface area and higher electrical conductivity, the Ni2P NPs with small size exhibit higher electrocatalytic activity. This work suggests that the size of Ni2P NPs is an important factor to affect the magnetic and electrocatalytic properties.

  15. Phase-controllable synthesis of nanosized nickel phosphides and comparison of photocatalytic degradation ability.

    PubMed

    Ni, Yonghong; Jin, Lina; Hong, Jianming

    2011-01-01

    In this paper, we employed a facile hydrothermal route to successfully synthesize nanosized nickel phosphide particles with controlled phases via selecting different surfactants at different temperatures and times. The phases of the as-obtained products were determined by X-ray powder diffraction (XRD) patterns and Rietveld refinement of XRD data. The morphologies of the products were characterized by (high resolution) transmission electron microscopy (HR/TEM) and field emission scanning electron microscopy (FESEM). Experiments indicated that pure Ni2P phase could be prepared when nontoxic red phosphorus and nickel dichloride were used as starting materials in the presence of polyvinylpyrrolidone (PVP, 30 K), sodium dodecylbenzene sulfonate (SDBS), cetyltrimethylammonium bromide (CTAB) or polyethylene glycol 10000 (PEG-10000) at 160 °C for 10 h. When acrylamide (AM) was selected as the surfactant, however, pure Ni12P5 phase could be prepared by prolonging the reaction time to 20 h at 160 °C, or enhancing the reaction temperature to 180 °C for 10 h. Furthermore, the experiments indicated that the pure Ni2P phase possessed a stronger photocatalytic degradation ability than the pure Ni12P5 phase. PMID:21049133

  16. Highly Efficient and Robust Nickel Phosphides as Bifunctional Electrocatalysts for Overall Water-Splitting.

    PubMed

    Li, Jiayuan; Li, Jing; Zhou, Xuemei; Xia, Zhaoming; Gao, Wei; Ma, Yuanyuan; Qu, Yongquan

    2016-05-01

    To search for the efficient non-noble metal based and/or earth-abundant electrocatalysts for overall water-splitting is critical to promote the clean-energy technologies for hydrogen economy. Herein, we report nickel phosphide (NixPy) catalysts with the controllable phases as the efficient bifunctional catalysts for water electrolysis. The phases of NixPy were determined by the temperatures of the solid-phase reaction between the ultrathin Ni(OH)2 plates and NaH2PO2·H2O. The NixPy with the richest Ni5P4 phase synthesized at 325 °C (NixPy-325) delivered efficient and robust catalytic performance for hydrogen evolution reaction (HER) in the electrolytes with a wide pH range. The NixPy-325 catalysts also exhibited a remarkable performance for oxygen evolution reaction (OER) in a strong alkaline electrolyte (1.0 M KOH) due to the formation of surface NiOOH species. Furthermore, the bifunctional NixPy-325 catalysts enabled a highly performed overall water-splitting with ∼100% Faradaic efficiency in 1.0 M KOH electrolyte, in which a low applied external potential of 1.57 V led to a stabilized catalytic current density of 10 mA/cm(2) over 60 h. PMID:27064172

  17. Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion

    NASA Astrophysics Data System (ADS)

    Parameshwaran, Vijay; Xu, Xiaoqing; Kang, Yangsen; Harris, James; Wong, H.-S. Philip; Clemens, Bruce

    2013-03-01

    Dilute nitride materials have been used in a variety of III-V photonic devices, but have not been significantly explored in photoelectrochemical applications. This work focuses on using dilute phosphide nitride materials of the form (Al,In)P1-xNx as photocathodes for the generation of hydrogen fuel from solar energy. Heteroepitaxial MOCVD growth of AlPN thin films on GaP yields high quality material with a direct bandgap energy of 2.218 eV. Aligned epitaxial growth of InP and GaP nanowires on InP and Si substrates, respectively, provides a template for designing nanostructured photocathodes over a large area. Electrochemical testing of a AlPN/GaP heterostructure electrode yields up to a sixfold increase in photocurrent enhancement under blue light illumination as compared to a GaP electrode. Additionally, the AlPN/GaP electrodes exhibit no degradation in performance after galvanostatic biasing over time. These results show that (Al,In)P1-xNx is a promising materials system for use in nanoscale photocathode structures.

  18. 5 CFR 330.1104 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... PLACEMENT (GENERAL) Federal Employment Priority Consideration Program for Displaced Employees of the District of Columbia Department of Corrections § 330.1104 Eligibility. (a) To be eligible for...

  19. ROLE OF C AND P SITES ON THE CHEMICAL ACTIVITY OF METAL CARBIDE AND PHOSPHIDES: FROM CLUSTERS TO SINGLE-CRYSTAL SURFACES

    SciTech Connect

    RODRIGUEZ,J.A.; VINES, F.; LIU, P.; ILLAS, F.

    2007-07-01

    Transition metal carbides and phosphides have shown tremendous potential as highly active catalysts. At a microscopic level, it is not well understood how these new catalysts work. Their high activity is usually attributed to ligand or/and ensemble effects. Here, we review recent studies that examine the chemical activity of metal carbide and phosphides as a function of size, from clusters to extended surfaces, and metal/carbon or metal/phosphorous ratio. These studies reveal that the C and P sites in these compounds cannot be considered as simple spectators. They moderate the reactivity of the metal centers and provide bonding sites for adsorbates.

  20. A comparative field trial, conducted without pre-treatment census baiting, of the rodenticides zinc phosphide, thallium sulphate and gophacide against Rattus norvegicus.

    PubMed Central

    Rennison, B. D.

    1976-01-01

    The effectiveness of the single-dose poison treatments of farm rat infestations, analysed by comparing the weights of the post-treatment census bait takes in covariance with the weights of the prebait takes, showed that treatments with 2-5% zinc phosphide, 0-3% thallium sulphate or 0-3% gophacide were equally effective and significantly better than were treatments with 1% zinc phosphide or 0-1% thallium sulphate. The methodology and sensitivity of different analyses are also considered. PMID:1068192

  1. Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

    1993-01-01

    Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

  2. Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

    NASA Astrophysics Data System (ADS)

    Tarasov, S. A.; Andreev, M. Y.; Lamkin, I. A.; Solomonov, A. V.

    2016-08-01

    In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed.

  3. 7 CFR 4288.111 - Biofuel eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 15 2014-01-01 2014-01-01 false Biofuel eligibility. 4288.111 Section 4288.111... RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE PAYMENT PROGRAMS Advanced Biofuel Payment Program General Provisions Eligibility Provisions § 4288.111 Biofuel eligibility. To be eligible for this...

  4. 7 CFR 1205.203 - Voting eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 10 2011-01-01 2011-01-01 false Voting eligibility. 1205.203 Section 1205.203... Voting eligibility. (a) General eligibility requirements. The following persons shall be eligible to vote... wife made the oral agreement. A minor is not disqualified from voting solely because of minority...

  5. 7 CFR 22.302 - Area eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 1 2014-01-01 2014-01-01 false Area eligibility. 22.302 Section 22.302 Agriculture... Governments § 22.302 Area eligibility. Eligibility for programs under the Act will be based on the criteria of community size and location of population as specified in the Act. State designations of eligible areas...

  6. 7 CFR 22.302 - Area eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 1 2010-01-01 2010-01-01 false Area eligibility. 22.302 Section 22.302 Agriculture... Governments § 22.302 Area eligibility. Eligibility for programs under the Act will be based on the criteria of community size and location of population as specified in the Act. State designations of eligible areas...

  7. 7 CFR 22.302 - Area eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 1 2013-01-01 2013-01-01 false Area eligibility. 22.302 Section 22.302 Agriculture... Governments § 22.302 Area eligibility. Eligibility for programs under the Act will be based on the criteria of community size and location of population as specified in the Act. State designations of eligible areas...

  8. 42 CFR 57.1503 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... FACILITIES, EDUCATIONAL IMPROVEMENTS, SCHOLARSHIPS AND STUDENT LOANS Loan Guarantees and Interest Subsidies... Eligibility. (a) Eligible applicants. In order to be eligible for a loan guarantee or interest subsidy under... personnel. (b) Eligible loans. Subject to the provisions of this subpart, the Secretary may...

  9. 25 CFR 700.181 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 25 Indians 2 2010-04-01 2010-04-01 false Eligibility. 700.181 Section 700.181 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES Replacement Housing Payments § 700.181 Eligibility. (a) Basic eligibility requirements. A certified eligible head...

  10. 25 CFR 700.181 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 25 Indians 2 2013-04-01 2013-04-01 false Eligibility. 700.181 Section 700.181 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES Replacement Housing Payments § 700.181 Eligibility. (a) Basic eligibility requirements. A certified eligible head...

  11. 25 CFR 700.181 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 25 Indians 2 2012-04-01 2012-04-01 false Eligibility. 700.181 Section 700.181 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES Replacement Housing Payments § 700.181 Eligibility. (a) Basic eligibility requirements. A certified eligible head...

  12. 25 CFR 700.181 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 25 Indians 2 2011-04-01 2011-04-01 false Eligibility. 700.181 Section 700.181 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES Replacement Housing Payments § 700.181 Eligibility. (a) Basic eligibility requirements. A certified eligible head...

  13. 47 CFR 54.640 - Eligible vendors.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... SERVICE Universal Service Support for Health Care Providers Healthcare Connect Fund § 54.640 Eligible vendors. (a) Eligibility. For purposes of the Healthcare Connect Fund, eligible vendors shall include any provider of equipment, facilities, or services that are eligible for support under Healthcare Connect...

  14. 7 CFR 1230.624 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... CONSUMER INFORMATION Procedures for the Conduct of Referendum Referendum § 1230.624 Eligibility. (a) Eligible producers and importers. Persons eligible to register and vote in the referendum include: (1... individual who registers to vote in the referendum on behalf of any eligible producer or importer...

  15. 7 CFR 1230.624 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... CONSUMER INFORMATION Procedures for the Conduct of Referendum Referendum § 1230.624 Eligibility. (a) Eligible producers and importers. Persons eligible to register and vote in the referendum include: (1... individual who registers to vote in the referendum on behalf of any eligible producer or importer...

  16. 13 CFR 301.2 - Applicant eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... ELIGIBILITY, INVESTMENT RATE AND PROPOSAL AND APPLICATION REQUIREMENTS Applicant Eligibility § 301.2 Applicant eligibility. (a) An Eligible Applicant for EDA Investment Assistance is defined in § 300.3 of this chapter. (b... Investment Assistance a resolution passed by (or a letter signed by) an authorized representative of...

  17. 7 CFR 1160.114 - Eligible organization.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 9 2011-01-01 2011-01-01 false Eligible organization. 1160.114 Section 1160.114... Order Definitions § 1160.114 Eligible organization. Eligible organization means an organization eligible... organization pursuant to section 501(c) (3), (5), or (6) of the Internal Revenue Code (26 U.S.C. 501(c) (3),...

  18. 7 CFR 1160.114 - Eligible organization.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 9 2010-01-01 2009-01-01 true Eligible organization. 1160.114 Section 1160.114... Order Definitions § 1160.114 Eligible organization. Eligible organization means an organization eligible... organization pursuant to section 501(c) (3), (5), or (6) of the Internal Revenue Code (26 U.S.C. 501(c) (3),...

  19. 7 CFR 1160.114 - Eligible organization.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 9 2012-01-01 2012-01-01 false Eligible organization. 1160.114 Section 1160.114... Order Definitions § 1160.114 Eligible organization. Eligible organization means an organization eligible... organization pursuant to section 501(c) (3), (5), or (6) of the Internal Revenue Code (26 U.S.C. 501(c) (3),...

  20. 7 CFR 63.5 - Eligible organization.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false Eligible organization. 63.5 Section 63.5 Agriculture... IMPROVEMENT CENTER General Provisions Definitions § 63.5 Eligible organization. Eligible organization means any national organization that meets the criteria provided for in § 63.105 as being eligible to...

  1. 7 CFR 63.5 - Eligible organization.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 3 2013-01-01 2013-01-01 false Eligible organization. 63.5 Section 63.5 Agriculture... IMPROVEMENT CENTER General Provisions Definitions § 63.5 Eligible organization. Eligible organization means any national organization that meets the criteria provided for in § 63.105 as being eligible to...

  2. 7 CFR 1260.114 - Eligible organization.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 10 2010-01-01 2010-01-01 false Eligible organization. 1260.114 Section 1260.114... Promotion and Research Order Definitions § 1260.114 Eligible organization. Eligible organization means any organization which has been certified by the Secretary pursuant to the Act and this part as being eligible...

  3. 7 CFR 1260.114 - Eligible organization.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 10 2011-01-01 2011-01-01 false Eligible organization. 1260.114 Section 1260.114... Promotion and Research Order Definitions § 1260.114 Eligible organization. Eligible organization means any organization which has been certified by the Secretary pursuant to the Act and this part as being eligible...

  4. 7 CFR 1260.114 - Eligible organization.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 10 2014-01-01 2014-01-01 false Eligible organization. 1260.114 Section 1260.114... Promotion and Research Order Definitions § 1260.114 Eligible organization. Eligible organization means any organization which has been certified by the Secretary pursuant to the Act and this part as being eligible...

  5. 7 CFR 63.5 - Eligible organization.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 3 2012-01-01 2012-01-01 false Eligible organization. 63.5 Section 63.5 Agriculture... IMPROVEMENT CENTER General Provisions Definitions § 63.5 Eligible organization. Eligible organization means any national organization that meets the criteria provided for in § 63.105 as being eligible to...

  6. 7 CFR 1160.114 - Eligible organization.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 9 2014-01-01 2013-01-01 true Eligible organization. 1160.114 Section 1160.114... Order Definitions § 1160.114 Eligible organization. Eligible organization means an organization eligible... organization pursuant to section 501(c) (3), (5), or (6) of the Internal Revenue Code (26 U.S.C. 501(c) (3),...

  7. 7 CFR 1160.114 - Eligible organization.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 9 2013-01-01 2013-01-01 false Eligible organization. 1160.114 Section 1160.114... Order Definitions § 1160.114 Eligible organization. Eligible organization means an organization eligible... organization pursuant to section 501(c) (3), (5), or (6) of the Internal Revenue Code (26 U.S.C. 501(c) (3),...

  8. 7 CFR 63.5 - Eligible organization.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 3 2014-01-01 2014-01-01 false Eligible organization. 63.5 Section 63.5 Agriculture... IMPROVEMENT CENTER General Provisions Definitions § 63.5 Eligible organization. Eligible organization means any national organization that meets the criteria provided for in § 63.105 as being eligible to...

  9. 7 CFR 1260.114 - Eligible organization.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 10 2012-01-01 2012-01-01 false Eligible organization. 1260.114 Section 1260.114... Promotion and Research Order Definitions § 1260.114 Eligible organization. Eligible organization means any organization which has been certified by the Secretary pursuant to the Act and this part as being eligible...

  10. 7 CFR 1260.114 - Eligible organization.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 10 2013-01-01 2013-01-01 false Eligible organization. 1260.114 Section 1260.114... Promotion and Research Order Definitions § 1260.114 Eligible organization. Eligible organization means any organization which has been certified by the Secretary pursuant to the Act and this part as being eligible...

  11. 28 CFR 31.501 - Eligible applicants.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 28 Judicial Administration 1 2010-07-01 2010-07-01 false Eligible applicants. 31.501 Section 31.501 Judicial Administration DEPARTMENT OF JUSTICE OJJDP GRANT PROGRAMS Juvenile Accountability Incentive Block Grants § 31.501 Eligible applicants. (a) Eligible applicants. Eligible applicants in FY...

  12. 12 CFR 1261.5 - Director eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 12 Banks and Banking 10 2014-01-01 2014-01-01 false Director eligibility. 1261.5 Section 1261.5... DIRECTORS Federal Home Loan Bank Boards of Directors: Eligibility and Elections § 1261.5 Director eligibility. (a) Eligibility requirements for member directors. Each member director, and each nominee to...

  13. 12 CFR 1261.5 - Director eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 12 Banks and Banking 9 2013-01-01 2013-01-01 false Director eligibility. 1261.5 Section 1261.5... DIRECTORS Federal Home Loan Bank Boards of Directors: Eligibility and Elections § 1261.5 Director eligibility. (a) Eligibility requirements for member directors. Each member director, and each nominee to...

  14. 12 CFR 1261.5 - Director eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 12 Banks and Banking 7 2011-01-01 2011-01-01 false Director eligibility. 1261.5 Section 1261.5... DIRECTORS Federal Home Loan Bank Boards of Directors: Eligibility and Elections § 1261.5 Director eligibility. (a) Eligibility requirements for member directors. Each member director, and each nominee to...

  15. A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

    NASA Astrophysics Data System (ADS)

    Wagner, Hannes; Ohrdes, Tobias; Dastgheib-Shirazi, Amir; Puthen-Veettil, Binesh; König, Dirk; Altermatt, Pietro P.

    2014-01-01

    The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl3 diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)-(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher Voc. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

  16. A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

    SciTech Connect

    Wagner, Hannes; Ohrdes, Tobias; Dastgheib-Shirazi, Amir; Puthen-Veettil, Binesh; König, Dirk; Altermatt, Pietro P.

    2014-01-28

    The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

  17. Hydroxyethyl Starch Could Save a Patient With Acute Aluminum Phosphide Poisoning.

    PubMed

    Marashi, Sayed Mahdi; Nasri Nasrabadi, Zeynab; Jafarzadeh, Mostafa; Mohammadi, Sogand

    2016-07-01

    A 40-year-old male patient with suicidal ingestion of one tablet of aluminium phosphide was referred to the department of toxicology emergency of Baharloo Hospital, Tehran, Iran. The garlic odor was smelled from the patient and abdominal pain and continuous vomiting as well as agitation and heartburn were the first signs and symptoms. Systolic and diastolic blood pressures at the arrival time were 95 and 67 mmHg, respectively. Gastric lavage with potassium permanganate (1:10,000), and 2 vials of sodium bicarbonate through a nasogastric tube was started for the patient and the management was continued with free intravenous infusion of 1 liter of NaCl 0.9% serum plus NaHCO3, hydrocortisone acetate (200 mg), calcium gluconate (1 g) and magnesium sulfate (1 g). Regarding the large intravenous fluid therapy and vasoconstrictor administering (norepinephrine started by 5 µg/min and continued till 15 µg/min), there were no signs of response and the systolic blood pressure was 49 mmHg. At this time, hydroxyethyl starch (HES) (6% hetastarch 600/0.75 in 0.9% sodium chloride) with a dose of 600 cc in 6 hours was started for the patient. At the end of therapy with HES, the patient was stable with systolic and diastolic blood pressure of 110 and 77 mmHg, respectively. He was discharged on the 6th day after the psychological consultation, with normal clinical and paraclinical examinations. This is the first report of using HES in the management of AlP poisoning and its benefit to survive the patient. PMID:27424021

  18. Study of grown-in and radiation-induced defects in indium phosphide

    SciTech Connect

    Shaban, E.H.

    1986-01-01

    This research is focused on (1) conducting detailed theoretical and experimental study of grown-in and radiation-induced defects in liquid encapsulated Czohralski (LEC) grown, Zn-doped P-type indium phosphide (InP), (2) identifying the physical origin of the defects detected using Deep Level Transient Spectroscopy (DLTS) method, and (3) and developing a second-order model to interpret the presence of nonexponential capacitance transients in DLTS method. Analysis of grown-in and radiation-induced defects in P-type InP is undertaken. The main research results are summarized as follows: (1) DLTS analysis of grown-in defects in liquid LEC-grown, Zn-doped, P-type InP is made in this study. A single-hole trap of E/sub v/ + 0.52 eV is detected with a trap density of 1.8 x 10/sup 15/ cm/sup -3/. The physical origin of this hole trap is attributed to a phosphorus vacancy or phosphorus interstitial-related defect. (2) One-MeV electron-irradiated P-type InP introduced two new hole traps, namely E/sub v/ + 0.34 and E/sub v/ + 0.58 eV with introduction rates (dN/sub T/d phi) of 0.4 and 1.2 per electron-cm, respectively. (3) A theoretical model is developed to interpret nonexponential capacitance transients in a deep-level transient spectroscopy method when the capture process competes with the dominant thermal-emission process.

  19. End-coupled optical waveguide MEMS devices in the indium phosphide material system

    NASA Astrophysics Data System (ADS)

    Pruessner, Marcel W.; Siwak, Nathan; Amarnath, Kuldeep; Kanakaraju, S.; Chuang, Wen-Hsien; Ghodssi, Reza

    2006-04-01

    We demonstrate electrostatically actuated end-coupled optical waveguide devices in the indium phosphide (InP) material system. The design of a suitable layer structure and fabrication process for actuated InP-based waveguide micro-electro-mechanical systems (MEMS) is reviewed. Critical issues for optical design, such as coupling losses, are discussed and their effect on device performance is evaluated. Several end-coupled waveguide devices are demonstrated, including 1 × 2 optical switches and resonant sensors with integrated optical readout. The 1 × 2 optical switches exhibit low-voltage operation (<7 V), low crosstalk (-26 dB), reasonable loss (3.2 dB) and switching speed suitable for network restoration applications (140 µs, 2 ms settling time). Experimental characterization of the integrated cantilever waveguide resonant sensors shows high repeatability and accuracy, with a standard deviation as low as σ = 50 Hz (0.027%) for fresonant = 184.969 kHz. By performing focused-ion beam (FIB) milling on a sensor, a mass sensitivity of Δm/Δf = 5.3 × 10-15 g Hz-1 was measured, which is competitive with other sensors. Resonant frequencies as high as f = 1.061 MHz (Qeffective = 159.7) have been measured in air with calculated sensitivity Δm/Δf = 1.1 × 10-16 g Hz-1. Electrostatic tuning of the resonator sensors was also examined. The prospect of developing InP MEMS devices monolithically integrated with active optical components (lasers, LEDs, photodetectors) is discussed.

  20. CVD growth and properties of boron phosphide on 3C-SiC

    NASA Astrophysics Data System (ADS)

    Padavala, Balabalaji; Frye, C. D.; Wang, Xuejing; Raghothamachar, Balaji; Edgar, J. H.

    2016-09-01

    Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000-1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths across the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100) < 011 > BP||(100) < 011 > 3C-SiC and (111) < 11 2 ̅ > BP||(111) < 11 2 ̅ > 3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates.

  1. Oxidation does not (always) kill reactivity of transition metals: solution-phase conversion of nanoscale transition metal oxides to phosphides and sulfides.

    PubMed

    Muthuswamy, Elayaraja; Brock, Stephanie L

    2010-11-17

    Unexpected reactivity on the part of oxide nanoparticles that enables their transformation into phosphides or sulfides by solution-phase reaction with trioctylphosphine (TOP) or sulfur, respectively, at temperatures of ≤370 °C is reported. Impressively, single-phase phosphide products are produced, in some cases with controlled anisotropy and narrow polydispersity. The generality of the approach is demonstrated for Ni, Fe, and Co, and while manganese oxides are not sufficiently reactive toward TOP to form phosphides, they do yield MnS upon reaction with sulfur. The reactivity can be attributed to the small size of the precursor particles, since attempts to convert bulk oxides or even particles with sizes approaching 50 nm were unsuccessful. Overall, the use of oxide nanoparticles, which are easily accessed via reaction of inexpensive salts with air, in lieu of organometallic reagents (e.g., metal carbonyls), which may or may not be transformed into metal nanoparticles, greatly simplifies the production of nanoscale phosphides and sulfides. The precursor nanoparticles can easily be produced in large quantities and stored in the solid state without concern that "oxidation" will limit their reactivity.

  2. Electrocatalytic and photocatalytic hydrogen production from acidic and neutral-pH aqueous solutions using iron phosphide nanoparticles.

    PubMed

    Callejas, Juan F; McEnaney, Joshua M; Read, Carlos G; Crompton, J Chance; Biacchi, Adam J; Popczun, Eric J; Gordon, Thomas R; Lewis, Nathan S; Schaak, Raymond E

    2014-11-25

    Nanostructured transition-metal phosphides have recently emerged as Earth-abundant alternatives to platinum for catalyzing the hydrogen-evolution reaction (HER), which is central to several clean energy technologies because it produces molecular hydrogen through the electrochemical reduction of water. Iron-based catalysts are very attractive targets because iron is the most abundant and least expensive transition metal. We report herein that iron phosphide (FeP), synthesized as nanoparticles having a uniform, hollow morphology, exhibits among the highest HER activities reported to date in both acidic and neutral-pH aqueous solutions. As an electrocatalyst operating at a current density of -10 mA cm(-2), FeP nanoparticles deposited at a mass loading of ∼1 mg cm(-2) on Ti substrates exhibited overpotentials of -50 mV in 0.50 M H2SO4 and -102 mV in 1.0 M phosphate buffered saline. The FeP nanoparticles supported sustained hydrogen production with essentially quantitative faradaic yields for extended time periods under galvanostatic control. Under UV illumination in both acidic and neutral-pH solutions, FeP nanoparticles deposited on TiO2 produced H2 at rates and amounts that begin to approach those of Pt/TiO2. FeP therefore is a highly Earth-abundant material for efficiently facilitating the HER both electrocatalytically and photocatalytically.

  3. Effect of Synthetic Levers on Nickel Phosphide Nanoparticle Formation: Ni5P4 and NiP2.

    PubMed

    Li, Da; Senevirathne, Keerthi; Aquilina, Lance; Brock, Stephanie L

    2015-08-17

    Due to their unique catalytic, electronic, and redox processes, Ni5P4 and NiP2 nanoparticles are of interest for a wide-range of applications from the hydrogen evolution reaction to energy storage (batteries); yet synthetic approaches to these materials are limited. In the present work, a phase-control strategy enabling the arrested-precipitation synthesis of nanoparticles of Ni5P4 and NiP2 as phase-pure samples using different Ni organometallic precursors and trioctylphosphine (TOP) is described. The composition and purity of the product can be tuned by changing key synthetic levers, including the Ni precursor, the oleylamine (OAm) coordinating solvent and TOP concentrations, temperature, time, and the presence or absence of a moderate temperature soak step to facilitate formation of Ni and/or Ni-P amorphous nanoparticle intermediates. Notably, the 230 °C intermediate step favors the ultimate formation of Ni2P and hinders further phosphidation to form Ni5P4 or NiP2 as phase-pure products. In the absence of this step, increasing the P/Ni ratio (13-20), reaction temperature (350-385 °C), and time (10-48 h) favors more P-rich phases, and these parameters can be adjusted to generate either Ni5P4 or NiP2. The phase of the obtained particles can also be tuned between pure Ni2P to Ni5P4 and NiP2 by simply decreasing the OAm/TOP ratio and/or changing the nickel precursor (nickel(II)acetylacetonate, nickel(II)acetate tetrahydrate, or bis(cyclooctadiene)nickel(0)). However, at high concentrations of OAm, the product formed is the same regardless of Ni precursor, suggesting the formation of a uniform Ni intermediate (an Ni-oleylamine complex) under these conditions that is responsible for product distribution. Intriguingly, under the extreme phosphidation conditions required to favor Ni5P4 and NiP2 over Ni2P (large excess of TOP), the 20-30 nm crystallites assemble into supraparticles with diameters of 100-500 nm. These factors are discussed in light of a comprehensive

  4. 7 CFR 634.20 - Eligible land.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... AGRICULTURE LONG TERM CONTRACTING RURAL CLEAN WATER PROGRAM Participant RCWP Contracts § 634.20 Eligible land... (i.e., their stock is publicly traded over the market) is eligible for program assistance only if...

  5. 7 CFR 634.20 - Eligible land.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... AGRICULTURE LONG TERM CONTRACTING RURAL CLEAN WATER PROGRAM Participant RCWP Contracts § 634.20 Eligible land... (i.e., their stock is publicly traded over the market) is eligible for program assistance only if...

  6. 7 CFR 634.20 - Eligible land.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... AGRICULTURE LONG TERM CONTRACTING RURAL CLEAN WATER PROGRAM Participant RCWP Contracts § 634.20 Eligible land... (i.e., their stock is publicly traded over the market) is eligible for program assistance only if...

  7. 7 CFR 634.20 - Eligible land.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... AGRICULTURE LONG TERM CONTRACTING RURAL CLEAN WATER PROGRAM Participant RCWP Contracts § 634.20 Eligible land... (i.e., their stock is publicly traded over the market) is eligible for program assistance only if...

  8. 7 CFR 4288.110 - Applicant eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE PAYMENT PROGRAMS Advanced Biofuel Payment Program....119 present the requirements associated with advanced biofuel producer eligibility, biofuel... advanced biofuel producer, as defined in this subpart. (b) Eligibility determination. The Agency...

  9. 7 CFR 249.6 - Participant eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... Agriculture Regulations of the Department of Agriculture (Continued) FOOD AND NUTRITION SERVICE, DEPARTMENT OF AGRICULTURE CHILD NUTRITION PROGRAMS SENIOR FARMERS' MARKET NUTRITION PROGRAM (SFMNP) Participant Eligibility... congregate nutrition services are provided, as categorically eligible to receive SFMNP benefits....

  10. 7 CFR 2903.3 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... AGRICULTURE BIODIESEL FUEL EDUCATION PROGRAM General Information § 2903.3 Eligibility. (a) Eligibility is... knowledge of biodiesel fuel production, use, or distribution and the ability to conduct educational...

  11. 7 CFR 249.6 - Participant eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... Agriculture Regulations of the Department of Agriculture (Continued) FOOD AND NUTRITION SERVICE, DEPARTMENT OF AGRICULTURE CHILD NUTRITION PROGRAMS SENIOR FARMERS' MARKET NUTRITION PROGRAM (SFMNP) Participant Eligibility... congregate nutrition services are provided, as categorically eligible to receive SFMNP benefits....

  12. 7 CFR 2903.3 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... AGRICULTURE BIODIESEL FUEL EDUCATION PROGRAM General Information § 2903.3 Eligibility. (a) Eligibility is... knowledge of biodiesel fuel production, use, or distribution and the ability to conduct educational...

  13. 20 CFR 631.85 - Participant eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... TITLE III OF THE JOB TRAINING PARTNERSHIP ACT Disaster Relief Employment Assistance § 631.85 Participant eligibility. An individual shall be eligible for disaster employment under this subpart if such individual is... a consequence of the disaster. (b)...

  14. 20 CFR 631.85 - Participant eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... TITLE III OF THE JOB TRAINING PARTNERSHIP ACT Disaster Relief Employment Assistance § 631.85 Participant eligibility. An individual shall be eligible for disaster employment under this subpart if such individual is... a consequence of the disaster. (b)...

  15. 7 CFR 249.6 - Participant eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... Agriculture Regulations of the Department of Agriculture (Continued) FOOD AND NUTRITION SERVICE, DEPARTMENT OF AGRICULTURE CHILD NUTRITION PROGRAMS SENIOR FARMERS' MARKET NUTRITION PROGRAM (SFMNP) Participant Eligibility... congregate nutrition services are provided, as categorically eligible to receive SFMNP benefits....

  16. 47 CFR 54.634 - Eligible services.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... SERVICE Universal Service Support for Health Care Providers Healthcare Connect Fund § 54.634 Eligible... through 54.680, eligible health care providers may request support from the Healthcare Connect Fund...

  17. 24 CFR 234.501 - Eligibility requirements.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... CONDOMINIUM OWNERSHIP MORTGAGE INSURANCE Eligibility Requirements-Projects-Conversion Individual Sales Units § 234.501 Eligibility requirements. The requirements set forth in 24 CFR part 200, subpart A, apply...

  18. 12 CFR 1807.200 - Applicant eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... in 12 CFR 1805.201, that has been in existence as a legally formed entity as set forth in the Notice... CAPITAL MAGNET FUND Eligibility § 1807.200 Applicant eligibility. (a) General requirements. An...

  19. 12 CFR 1807.200 - Applicant eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... in 12 CFR 1805.201, that has been in existence as a legally formed entity as set forth in the Notice... CAPITAL MAGNET FUND Eligibility § 1807.200 Applicant eligibility. (a) General requirements. An...

  20. 12 CFR 1807.200 - Applicant eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... in 12 CFR 1805.201, that has been in existence as a legally formed entity as set forth in the Notice... CAPITAL MAGNET FUND Eligibility § 1807.200 Applicant eligibility. (a) General requirements. An...

  1. 12 CFR 1807.200 - Applicant eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... in 12 CFR 1805.201, that has been in existence as a legally formed entity as set forth in the Notice... CAPITAL MAGNET FUND Eligibility § 1807.200 Applicant eligibility. (a) General requirements. An...

  2. 5 CFR 352.904 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... Reemployment Rights After Service With the Panama Canal Commission § 352.904 Eligibility. This subpart covers... Republic of Panama. (a) Employees eligible. Except as provided in paragraph (b) of this section,...

  3. 5 CFR 352.904 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... Reemployment Rights After Service With the Panama Canal Commission § 352.904 Eligibility. This subpart covers... Republic of Panama. (a) Employees eligible. Except as provided in paragraph (b) of this section,...

  4. 5 CFR 352.904 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... Reemployment Rights After Service With the Panama Canal Commission § 352.904 Eligibility. This subpart covers... Republic of Panama. (a) Employees eligible. Except as provided in paragraph (b) of this section,...

  5. 46 CFR 295.10 - Eligibility requirements.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... OPERATORS MARITIME SECURITY PROGRAM (MSP) Establishment of MSP Fleet and Eligibility § 295.10 Eligibility... Agreements for inclusion in the MSP Fleet pursuant to the provisions of subtitle B, title VI, of the...

  6. 23 CFR 260.107 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... intent to become citizens of the United States. ... PROGRAMS Fellowship and Scholarship Grants § 260.107 Eligibility. (a) Prior recipients of FHWA scholarships or fellowships are eligible if they will have completed all specific work commitments...

  7. 12 CFR 1705.3 - Eligible parties.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 12 Banks and Banking 7 2010-01-01 2010-01-01 false Eligible parties. 1705.3 Section 1705.3 Banks... Provisions § 1705.3 Eligible parties. (a) To be eligible for an award of fees and other expenses under § 1705.4(a), a party must be a small entity as defined in 5 U.S.C. 601. (b)(1) To be eligible for an...

  8. 27 CFR 26.204a - Verification of eligible wines and eligible flavors.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... wines and eligible flavors. 26.204a Section 26.204a Alcohol, Tobacco Products and Firearms ALCOHOL AND... Verification of eligible wines and eligible flavors. (a) Any person who, after December 1, 1990, brings into... eligible wines shall, before the first tax determination at that rate, request and receive a statement...

  9. Simulation of high-efficiency n[sup +]p indium phosphide solar cell results and future improvements

    SciTech Connect

    Jain, R.K.; Flood, D.J. )

    1994-12-01

    A simulation of the highest efficiency (19.1% AM0) n[sup +]p indium phosphide (InP) solar cell was made using a computer code PC-1D in order to understand it and suggest future improvements to it. Available cell design and process data was used in the simulation. Minority carrier diffusion lengths in the emitter and base have been varied to match the experimental cell I-V characteristics with the calculated results. To further understand and improve the InP cell efficiency, simulations were performed using improved values of cell material and process parameters. The authors show that the efficiency of this cell could be increased to more than 23% AM0 by incorporating the suggested cell material, design and process improvements. At these high efficiencies InP cell technology will be very attractive for space use.

  10. Synthesis and x-ray characterization of cobalt phosphide (Co₂P) nanorods for the oxygen reduction reaction

    DOE PAGESBeta

    Doan-Nguyen, Vicky V.T.; Su, Dong; Zhang, Sen; Trigg, Edward B.; Agarwal, Rahul; Li, Jing; Winey, Karen I.; Murray, Christopher B.

    2015-07-14

    Low temperature fuel cells are clean, effective alternative fuel conversion technology. Oxygen reduction reaction (ORR) at the fuel cell cathode has required Pt as the electrocatalyst for high activity and selectivity of the four-electron reaction pathway. Targeting a less expensive, earth abundant alternative, we have developed the synthesis of cobalt phosphide (Co₂P) nanorods for ORR. Characterization techniques that include total X-ray scattering and extended X-ray absorption fine structure revealed a deviation of the nanorods from bulk crystal structure with a contraction along the b orthorhombic lattice parameter. The carbon supported nanorods have comparable activity but are remarkably more stable thanmore » conventional Pt catalysts for the oxygen reduction reaction in alkaline environments.« less

  11. Synthesis and x-ray characterization of cobalt phosphide (Co₂P) nanorods for the oxygen reduction reaction

    SciTech Connect

    Doan-Nguyen, Vicky V.T.; Su, Dong; Zhang, Sen; Trigg, Edward B.; Agarwal, Rahul; Li, Jing; Winey, Karen I.; Murray, Christopher B.

    2015-07-14

    Low temperature fuel cells are clean, effective alternative fuel conversion technology. Oxygen reduction reaction (ORR) at the fuel cell cathode has required Pt as the electrocatalyst for high activity and selectivity of the four-electron reaction pathway. Targeting a less expensive, earth abundant alternative, we have developed the synthesis of cobalt phosphide (Co₂P) nanorods for ORR. Characterization techniques that include total X-ray scattering and extended X-ray absorption fine structure revealed a deviation of the nanorods from bulk crystal structure with a contraction along the b orthorhombic lattice parameter. The carbon supported nanorods have comparable activity but are remarkably more stable than conventional Pt catalysts for the oxygen reduction reaction in alkaline environments.

  12. Recent Progress In The Development Of Boron Phosphide As A Robust Coating Material For Infra-Red Transparencies

    NASA Astrophysics Data System (ADS)

    Lewis, Keith L.; Kelly, Chris J.; Monachan, Brian C.

    1989-09-01

    Boron Phosphide satisfies many of the material requirements for a coating suitable for use on high velocity IR windows. Such coatings have to be robust, resistant to abrasion and to rain erosion, and also capable of surviving thermal shock. Films of BP of several tens of microns in thickness have been produced by plasma assisted chemical vapour deposition on a variety of feedstocks. Growth has been achieved on a wide range of substrate materials, with no apparent limitation in film thickness, suggesting low levels of stress. The degree of optical transparency is high, covering 0.8 μm to 12 μm and beyond, with absorption levels being an order of magnitude lower than found for typical diamond-like carbon (DLC) films. The ability to survive severe erosive conditions is also significantly improved compared with DLC in wiper tests, water jet impact experiments are in whirling arm rain erosion tests.

  13. Characterization of the Absolute Crystal Polarity across Twin Boundaries in Gallium Phosphide Using Convergent-Beam Electron Diffraction.

    PubMed

    Cohen; McKernan; Carter

    1999-05-01

    : The measurement of absolute crystal polarity is crucial to understanding the structural properties of many planar defects in compound semiconductors. Grain boundaries, including twin boundaries, in the sphalerite lattice are uniquely characterized by the crystallographic misorientation of individual grains and the direction of the crystal polarity in domains adjoining the grain boundary. To evaluate crystal polarity in gallium phosphide (GaP), asymmetrical interference contrast in convergent-beam electron-diffraction (CBED) patterns was used to ascertain the nature and direction of polar bonds. The direction of the asymmetry in the electron diffraction reflections was correlated with the crystal polarity of a sample with known polarity. The CBED technique was applied to determine the polar orientation of grains adjoining Sigma = 3 coherent and lateral twin boundaries in polycrystalline GaP. PMID:10383990

  14. Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

    NASA Technical Reports Server (NTRS)

    Biedenbender, M. D.; Kapoor, V. J.

    1990-01-01

    A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

  15. Probing hydrodesulfurization over bimetallic phosphides using monodisperse Ni2-xMxP nanoparticles encapsulated in mesoporous silica

    NASA Astrophysics Data System (ADS)

    Danforth, Samuel J.; Liyanage, D. Ruchira; Hitihami-Mudiyanselage, Asha; Ilic, Boris; Brock, Stephanie L.; Bussell, Mark E.

    2016-06-01

    Metal phosphide nanoparticles encapsulated in mesoporous silica provide a well-defined system for probing the fundamental chemistry of the hydrodesulfurization (HDS) reaction over this new class of hydrotreating catalysts. To investigate composition effects in bimetallic phosphides, the HDS of dibenzothiophene (DBT) was carried out over a series of Ni-rich Ni2-xMxP@mSiO2 (M = Co, Fe) nanocatalysts (x ≤ 0.50). The Ni2-xMxP nanoparticles (average diameters: 11-13 nm) were prepared by solution-phase arrested precipitation and encapsulated in mesoporous silica, characterized by a range of techniques (XRD, TEM, IR spectroscopy, BET surface area, CO chemisorption) and tested for DBT HDS activity and selectivity. The highest activity was observed for a Ni1.92Co0.08P@mSiO2 nanocatalyst, but the overall trend was a decrease in HDS activity with increasing Co or Fe content. In contrast, the highest turnover frequency (TOF) was observed for the most Co- and Fe-rich compositions based on sites titrated by CO chemisorption. IR spectral studies of adsorbed CO on the Ni2-xMxP@mSiO2 catalysts indicate that an increase in electron density occurs on Ni sites as the Co or Fe content is increased, which may be responsible for the increased TOFs of the catalytic sites. The Ni2-xMxP@mSiO2 nanocatalysts exhibit a strong preference for the direct desulfurization pathway (DDS) for DBT HDS that changes only slightly with increasing Co or Fe content.

  16. 7 CFR 7.5 - Eligible voters.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 1 2010-01-01 2010-01-01 false Eligible voters. 7.5 Section 7.5 Agriculture Office of the Secretary of Agriculture SELECTION AND FUNCTIONS OF AGRICULTURAL STABILIZATION AND CONSERVATION STATE, COUNTY AND COMMUNITY COMMITTEES § 7.5 Eligible voters. (a) Voters eligible to participate in:...

  17. 44 CFR 80.11 - Project eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 44 Emergency Management and Assistance 1 2014-10-01 2014-10-01 false Project eligibility. 80.11... RELOCATION FOR OPEN SPACE Requirements Prior to Award § 80.11 Project eligibility. (a) Voluntary participation. Eligible acquisition projects are those where the property owner participates voluntarily,...

  18. 7 CFR 4280.171 - Project eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 15 2013-01-01 2013-01-01 false Project eligibility. 4280.171 Section 4280.171... General Renewable Energy System Feasibility Study Grants § 4280.171 Project eligibility. Only renewable energy system projects that meet the requirements specified in this section are eligible for...

  19. 44 CFR 80.11 - Project eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 44 Emergency Management and Assistance 1 2013-10-01 2013-10-01 false Project eligibility. 80.11... RELOCATION FOR OPEN SPACE Requirements Prior to Award § 80.11 Project eligibility. (a) Voluntary participation. Eligible acquisition projects are those where the property owner participates voluntarily,...

  20. 49 CFR 266.7 - Project eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Project eligibility. 266.7 Section 266.7... TRANSPORTATION ACT § 266.7 Project eligibility. (a) Rail service continuation assistance, acquisition assistance and substitute service assistance. A project is eligible for assistance under § 266.3(a) (1), (2),...

  1. 49 CFR 266.7 - Project eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Project eligibility. 266.7 Section 266.7... TRANSPORTATION ACT § 266.7 Project eligibility. (a) Rail service continuation assistance, acquisition assistance and substitute service assistance. A project is eligible for assistance under § 266.3(a) (1), (2),...

  2. 49 CFR 266.7 - Project eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Project eligibility. 266.7 Section 266.7... TRANSPORTATION ACT § 266.7 Project eligibility. (a) Rail service continuation assistance, acquisition assistance and substitute service assistance. A project is eligible for assistance under § 266.3(a) (1), (2),...

  3. 7 CFR 1739.11 - Eligible project.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 11 2013-01-01 2013-01-01 false Eligible project. 1739.11 Section 1739.11 Agriculture... BROADBAND GRANT PROGRAM Community Connect Grant Program § 1739.11 Eligible project. To be eligible for a grant, the Project must: (a) Serve a Rural Area where Broadband Transmission Service does not...

  4. 44 CFR 80.11 - Project eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 44 Emergency Management and Assistance 1 2011-10-01 2011-10-01 false Project eligibility. 80.11... RELOCATION FOR OPEN SPACE Requirements Prior to Award § 80.11 Project eligibility. (a) Voluntary participation. Eligible acquisition projects are those where the property owner participates voluntarily,...

  5. 7 CFR 4280.171 - Project eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 15 2012-01-01 2012-01-01 false Project eligibility. 4280.171 Section 4280.171... General Renewable Energy System Feasibility Study Grants § 4280.171 Project eligibility. Only renewable energy system projects that meet the requirements specified in this section are eligible for...

  6. 7 CFR 1739.11 - Eligible project.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 11 2011-01-01 2011-01-01 false Eligible project. 1739.11 Section 1739.11 Agriculture... BROADBAND GRANT PROGRAM Community Connect Grant Program § 1739.11 Eligible project. To be eligible for a grant, the Project must: (a) Serve a Rural Area where Broadband Transmission Service does not...

  7. 7 CFR 1739.11 - Eligible project.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 11 2012-01-01 2012-01-01 false Eligible project. 1739.11 Section 1739.11 Agriculture... BROADBAND GRANT PROGRAM Community Connect Grant Program § 1739.11 Eligible project. To be eligible for a grant, the Project must: (a) Serve a Rural Area where Broadband Transmission Service does not...

  8. 7 CFR 4280.123 - Project eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 15 2013-01-01 2013-01-01 false Project eligibility. 4280.123 Section 4280.123... General Renewable Energy System and Energy Efficiency Improvement Guaranteed Loans § 4280.123 Project eligibility. For a RES or EEI project to be eligible to receive a guaranteed loan under this subpart,...

  9. 49 CFR 266.7 - Project eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Project eligibility. 266.7 Section 266.7... TRANSPORTATION ACT § 266.7 Project eligibility. (a) Rail service continuation assistance, acquisition assistance and substitute service assistance. A project is eligible for assistance under § 266.3(a) (1), (2),...

  10. 7 CFR 4280.123 - Project eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 15 2012-01-01 2012-01-01 false Project eligibility. 4280.123 Section 4280.123... General Renewable Energy System and Energy Efficiency Improvement Guaranteed Loans § 4280.123 Project eligibility. For a RES or EEI project to be eligible to receive a guaranteed loan under this subpart,...

  11. 7 CFR 4288.111 - Biofuel eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 15 2013-01-01 2013-01-01 false Biofuel eligibility. 4288.111 Section 4288.111... RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE PAYMENT PROGRAMS Advanced Biofuel Payment Program General Provisions § 4288.111 Biofuel eligibility. To be eligible for this Program, a biofuel must...

  12. 7 CFR 4288.111 - Biofuel eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 15 2012-01-01 2012-01-01 false Biofuel eligibility. 4288.111 Section 4288.111... RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE PAYMENT PROGRAMS Advanced Biofuel Payment Program General Provisions § 4288.111 Biofuel eligibility. To be eligible for this Program, a biofuel must...

  13. 40 CFR 35.573 - Eligible Tribe.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... ASSISTANCE Environmental Program Grants for Tribes Air Pollution Control (section 105) § 35.573 Eligible....578 if it has demonstrated eligibility to be treated as a State under 40 CFR 49.6. An Intertribal Consortium consisting of Tribes that have demonstrated eligibility to be treated as States under 40 CFR...

  14. 5 CFR 470.303 - Eligible parties.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 5 Administrative Personnel 1 2010-01-01 2010-01-01 false Eligible parties. 470.303 Section 470.303 Administrative Personnel OFFICE OF PERSONNEL MANAGEMENT CIVIL SERVICE REGULATIONS PERSONNEL MANAGEMENT RESEARCH... Eligible parties. (a) Any Federal agency, or groups of two or more Federal agencies, eligible to...

  15. 5 CFR 470.303 - Eligible parties.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 5 Administrative Personnel 1 2011-01-01 2011-01-01 false Eligible parties. 470.303 Section 470.303 Administrative Personnel OFFICE OF PERSONNEL MANAGEMENT CIVIL SERVICE REGULATIONS PERSONNEL MANAGEMENT RESEARCH... Eligible parties. (a) Any Federal agency, or groups of two or more Federal agencies, eligible to...

  16. 12 CFR 1203.3 - Eligible parties.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 12 Banks and Banking 7 2011-01-01 2011-01-01 false Eligible parties. 1203.3 Section 1203.3 Banks... General Provisions § 1203.3 Eligible parties. (a) To be eligible for an award of fees and other expenses.... The applicant must also be a party to the adversary adjudication for which it seeks an award. (b)...

  17. 22 CFR 62.3 - Sponsor eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Sponsor eligibility. 62.3 Section 62.3 Foreign Relations DEPARTMENT OF STATE PUBLIC DIPLOMACY AND EXCHANGES EXCHANGE VISITOR PROGRAM General Provisions § 62.3 Sponsor eligibility. (a) Entities eligible to apply for designation as a sponsor of an...

  18. 22 CFR 62.3 - Sponsor eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Sponsor eligibility. 62.3 Section 62.3 Foreign Relations DEPARTMENT OF STATE PUBLIC DIPLOMACY AND EXCHANGES EXCHANGE VISITOR PROGRAM General Provisions § 62.3 Sponsor eligibility. (a) Entities eligible to apply for designation as a sponsor of an...

  19. 22 CFR 62.3 - Sponsor eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Sponsor eligibility. 62.3 Section 62.3 Foreign Relations DEPARTMENT OF STATE PUBLIC DIPLOMACY AND EXCHANGES EXCHANGE VISITOR PROGRAM General Provisions § 62.3 Sponsor eligibility. (a) Entities eligible to apply for designation as a sponsor of an...

  20. 22 CFR 62.3 - Sponsor eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Sponsor eligibility. 62.3 Section 62.3 Foreign Relations DEPARTMENT OF STATE PUBLIC DIPLOMACY AND EXCHANGES EXCHANGE VISITOR PROGRAM General Provisions § 62.3 Sponsor eligibility. (a) Entities eligible to apply for designation as a sponsor of an...

  1. 22 CFR 62.3 - Sponsor eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Sponsor eligibility. 62.3 Section 62.3 Foreign Relations DEPARTMENT OF STATE PUBLIC DIPLOMACY AND EXCHANGES EXCHANGE VISITOR PROGRAM General Provisions § 62.3 Sponsor eligibility. (a) Entities eligible to apply for designation as a sponsor of an...

  2. 24 CFR 1006.301 - Eligible families.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 24 Housing and Urban Development 4 2014-04-01 2014-04-01 false Eligible families. 1006.301 Section... NATIVE HAWAIIAN HOUSING BLOCK GRANT PROGRAM Program Requirements § 1006.301 Eligible families. (a... Hawaiian families who are eligible to reside on the Hawaiian Home Lands, except as provided...

  3. 24 CFR 1006.301 - Eligible families.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 24 Housing and Urban Development 4 2013-04-01 2013-04-01 false Eligible families. 1006.301 Section... NATIVE HAWAIIAN HOUSING BLOCK GRANT PROGRAM Program Requirements § 1006.301 Eligible families. (a... Hawaiian families who are eligible to reside on the Hawaiian Home Lands, except as provided...

  4. 24 CFR 1006.301 - Eligible families.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 24 Housing and Urban Development 4 2012-04-01 2012-04-01 false Eligible families. 1006.301 Section... NATIVE HAWAIIAN HOUSING BLOCK GRANT PROGRAM Program Requirements § 1006.301 Eligible families. (a... Hawaiian families who are eligible to reside on the Hawaiian Home Lands, except as provided...

  5. 38 CFR 60.3 - Eligible persons.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2010-07-01 2010-07-01 false Eligible persons. 60.3 Section 60.3 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED) FISHER HOUSES AND OTHER TEMPORARY LODGING § 60.3 Eligible persons. The following are eligible to stay...

  6. 7 CFR 3565.251 - Eligible property.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 15 2011-01-01 2011-01-01 false Eligible property. 3565.251 Section 3565.251... AGRICULTURE GUARANTEED RURAL RENTAL HOUSING PROGRAM Property Requirements § 3565.251 Eligible property. To be eligible for a guaranteed loan, a property must be used primarily for residential dwelling purposes...

  7. 24 CFR 2700.101 - Eligible properties.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 24 Housing and Urban Development 5 2011-04-01 2011-04-01 false Eligible properties. 2700.101... EMERGENCY HOMEOWNERS' LOAN PROGRAM Eligibility § 2700.101 Eligible properties. (a) In order to qualify for an emergency assistance under this part, the property of the homeowner seeking assistance must:...

  8. 32 CFR 65.7 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 32 National Defense 1 2011-07-01 2011-07-01 false Eligibility. 65.7 Section 65.7 National Defense Department of Defense OFFICE OF THE SECRETARY OF DEFENSE PERSONNEL, MILITARY AND CIVILIAN POST-9/11 GI BILL § 65.7 Eligibility. The DVA is responsible for determining eligibility for education benefits under...

  9. 32 CFR 65.7 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 32 National Defense 1 2012-07-01 2012-07-01 false Eligibility. 65.7 Section 65.7 National Defense Department of Defense OFFICE OF THE SECRETARY OF DEFENSE PERSONNEL, MILITARY AND CIVILIAN POST-9/11 GI BILL § 65.7 Eligibility. The DVA is responsible for determining eligibility for education benefits under...

  10. 32 CFR 65.7 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 32 National Defense 1 2013-07-01 2013-07-01 false Eligibility. 65.7 Section 65.7 National Defense Department of Defense OFFICE OF THE SECRETARY OF DEFENSE PERSONNEL, MILITARY AND CIVILIAN POST-9/11 GI BILL § 65.7 Eligibility. The DVA is responsible for determining eligibility for education benefits under...

  11. 38 CFR 60.3 - Eligible persons.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2012-07-01 2012-07-01 false Eligible persons. 60.3 Section 60.3 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED) FISHER HOUSES AND OTHER TEMPORARY LODGING § 60.3 Eligible persons. The following are eligible to stay...

  12. 38 CFR 60.3 - Eligible persons.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2011-07-01 2011-07-01 false Eligible persons. 60.3 Section 60.3 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED) FISHER HOUSES AND OTHER TEMPORARY LODGING § 60.3 Eligible persons. The following are eligible to stay...

  13. 42 CFR 59.203 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Eligibility. 59.203 Section 59.203 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES GRANTS GRANTS FOR FAMILY PLANNING SERVICES Grants for Family Planning Service Training § 59.203 Eligibility. (a) Eligible applicants. Any public...

  14. 23 CFR 650.405 - Eligible projects.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ..., STRUCTURES, AND HYDRAULICS Highway Bridge Replacement and Rehabilitation Program § 650.405 Eligible projects... rehabilitation. (b) Types of projects which are eligible. The following types of work are eligible for participation in the Highway Bridge Replacement and Rehabilitation Program (HBRRP), hereinafter known as...

  15. 47 CFR 90.33 - General eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES Industrial/Business Radio Pool § 90.33 General eligibility. (a) In addition to the eligibility shown in the Industrial/Business Pool, eligibility is also provided for any corporation...

  16. 23 CFR 505.7 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 23 Highways 1 2011-04-01 2011-04-01 false Eligibility. 505.7 Section 505.7 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRANSPORTATION INFRASTRUCTURE MANAGEMENT PROJECTS OF NATIONAL AND REGIONAL SIGNIFICANCE EVALUATION AND RATING § 505.7 Eligibility. To be eligible for...

  17. 23 CFR 505.7 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 23 Highways 1 2010-04-01 2010-04-01 false Eligibility. 505.7 Section 505.7 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRANSPORTATION INFRASTRUCTURE MANAGEMENT PROJECTS OF NATIONAL AND REGIONAL SIGNIFICANCE EVALUATION AND RATING § 505.7 Eligibility. To be eligible for...

  18. 23 CFR 505.7 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 23 Highways 1 2013-04-01 2013-04-01 false Eligibility. 505.7 Section 505.7 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRANSPORTATION INFRASTRUCTURE MANAGEMENT PROJECTS OF NATIONAL AND REGIONAL SIGNIFICANCE EVALUATION AND RATING § 505.7 Eligibility. To be eligible for...

  19. 23 CFR 505.7 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 23 Highways 1 2014-04-01 2014-04-01 false Eligibility. 505.7 Section 505.7 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRANSPORTATION INFRASTRUCTURE MANAGEMENT PROJECTS OF NATIONAL AND REGIONAL SIGNIFICANCE EVALUATION AND RATING § 505.7 Eligibility. To be eligible for...

  20. 23 CFR 505.7 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 23 Highways 1 2012-04-01 2012-04-01 false Eligibility. 505.7 Section 505.7 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION TRANSPORTATION INFRASTRUCTURE MANAGEMENT PROJECTS OF NATIONAL AND REGIONAL SIGNIFICANCE EVALUATION AND RATING § 505.7 Eligibility. To be eligible for...

  1. 38 CFR 21.3040 - Eligibility; child.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2011-07-01 2011-07-01 false Eligibility; child. 21.3040 Section 21.3040 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED.... Chapter 35 Eligibility and Entitlement § 21.3040 Eligibility; child. (a) Commencement. A program...

  2. 38 CFR 21.3040 - Eligibility; child.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2013-07-01 2013-07-01 false Eligibility; child. 21.3040 Section 21.3040 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED.... Chapter 35 Eligibility and Entitlement § 21.3040 Eligibility; child. (a) Commencement. A program...

  3. 38 CFR 21.3040 - Eligibility; child.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2014-07-01 2014-07-01 false Eligibility; child. 21.3040 Section 21.3040 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED.... Chapter 35 Eligibility and Entitlement § 21.3040 Eligibility; child. (a) Commencement. A program...

  4. 38 CFR 21.3040 - Eligibility; child.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2010-07-01 2010-07-01 false Eligibility; child. 21.3040 Section 21.3040 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED.... Chapter 35 Eligibility and Entitlement § 21.3040 Eligibility; child. (a) Commencement. A program...

  5. 38 CFR 21.3040 - Eligibility; child.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 38 Pensions, Bonuses, and Veterans' Relief 2 2012-07-01 2012-07-01 false Eligibility; child. 21.3040 Section 21.3040 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED.... Chapter 35 Eligibility and Entitlement § 21.3040 Eligibility; child. (a) Commencement. A program...

  6. 7 CFR 4280.130 - Eligible lenders.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 15 2011-01-01 2011-01-01 false Eligible lenders. 4280.130 Section 4280.130 Agriculture Regulations of the Department of Agriculture (Continued) RURAL BUSINESS-COOPERATIVE SERVICE AND... Efficiency Improvements Program Section B. Guaranteed Loans § 4280.130 Eligible lenders. Eligible lenders...

  7. 7 CFR 4280.130 - Eligible lenders.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 15 2010-01-01 2010-01-01 false Eligible lenders. 4280.130 Section 4280.130 Agriculture Regulations of the Department of Agriculture (Continued) RURAL BUSINESS-COOPERATIVE SERVICE AND... Efficiency Improvements Program Section B. Guaranteed Loans § 4280.130 Eligible lenders. Eligible lenders...

  8. 24 CFR 1006.301 - Eligible families.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 24 Housing and Urban Development 4 2011-04-01 2011-04-01 false Eligible families. 1006.301 Section... NATIVE HAWAIIAN HOUSING BLOCK GRANT PROGRAM Program Requirements § 1006.301 Eligible families. (a... Hawaiian families who are eligible to reside on the Hawaiian Home Lands, except as provided...

  9. 42 CFR 66.103 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Eligibility. 66.103 Section 66.103 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Direct Awards § 66.103 Eligibility. To be eligible for a National...

  10. 42 CFR 66.203 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Eligibility. 66.203 Section 66.203 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Institutional Grants § 66.203 Eligibility. To be eligible for a...

  11. 42 CFR 66.103 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Eligibility. 66.103 Section 66.103 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Direct Awards § 66.103 Eligibility. To be eligible for a National...

  12. 42 CFR 66.203 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 42 Public Health 1 2011-10-01 2011-10-01 false Eligibility. 66.203 Section 66.203 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Institutional Grants § 66.203 Eligibility. To be eligible for a...

  13. 42 CFR 66.203 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Eligibility. 66.203 Section 66.203 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Institutional Grants § 66.203 Eligibility. To be eligible for a...

  14. 42 CFR 66.103 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Eligibility. 66.103 Section 66.103 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Direct Awards § 66.103 Eligibility. To be eligible for a National...

  15. 42 CFR 66.103 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 42 Public Health 1 2011-10-01 2011-10-01 false Eligibility. 66.103 Section 66.103 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Direct Awards § 66.103 Eligibility. To be eligible for a National...

  16. 42 CFR 66.103 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 1 2014-10-01 2014-10-01 false Eligibility. 66.103 Section 66.103 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING NATIONAL RESEARCH SERVICE AWARDS Direct Awards § 66.103 Eligibility. To be eligible for a National...

  17. 7 CFR 25.100 - Eligibility requirements.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 1 2014-01-01 2014-01-01 false Eligibility requirements. 25.100 Section 25.100 Agriculture Office of the Secretary of Agriculture RURAL EMPOWERMENT ZONES AND ENTERPRISE COMMUNITIES Area Requirements § 25.100 Eligibility requirements. A nominated rural area may be eligible for designation...

  18. 7 CFR 25.100 - Eligibility requirements.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 1 2013-01-01 2013-01-01 false Eligibility requirements. 25.100 Section 25.100 Agriculture Office of the Secretary of Agriculture RURAL EMPOWERMENT ZONES AND ENTERPRISE COMMUNITIES Area Requirements § 25.100 Eligibility requirements. A nominated rural area may be eligible for designation...

  19. 7 CFR 25.100 - Eligibility requirements.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 1 2010-01-01 2010-01-01 false Eligibility requirements. 25.100 Section 25.100 Agriculture Office of the Secretary of Agriculture RURAL EMPOWERMENT ZONES AND ENTERPRISE COMMUNITIES Area Requirements § 25.100 Eligibility requirements. A nominated rural area may be eligible for designation...

  20. 7 CFR 25.100 - Eligibility requirements.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 1 2012-01-01 2012-01-01 false Eligibility requirements. 25.100 Section 25.100 Agriculture Office of the Secretary of Agriculture RURAL EMPOWERMENT ZONES AND ENTERPRISE COMMUNITIES Area Requirements § 25.100 Eligibility requirements. A nominated rural area may be eligible for designation...

  1. 7 CFR 25.100 - Eligibility requirements.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 1 2011-01-01 2011-01-01 false Eligibility requirements. 25.100 Section 25.100 Agriculture Office of the Secretary of Agriculture RURAL EMPOWERMENT ZONES AND ENTERPRISE COMMUNITIES Area Requirements § 25.100 Eligibility requirements. A nominated rural area may be eligible for designation...

  2. 10 CFR 800.004 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 10 Energy 4 2012-01-01 2012-01-01 false Eligibility. 800.004 Section 800.004 Energy DEPARTMENT OF ENERGY LOANS FOR BID OR PROPOSAL PREPARATION BY MINORITY BUSINESS ENTERPRISES SEEKING DOE CONTRACTS AND ASSISTANCE General § 800.004 Eligibility. In order to be eligible for a loan, an applicant must be a...

  3. 10 CFR 800.004 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 10 Energy 4 2010-01-01 2010-01-01 false Eligibility. 800.004 Section 800.004 Energy DEPARTMENT OF ENERGY LOANS FOR BID OR PROPOSAL PREPARATION BY MINORITY BUSINESS ENTERPRISES SEEKING DOE CONTRACTS AND ASSISTANCE General § 800.004 Eligibility. In order to be eligible for a loan, an applicant must be a...

  4. 10 CFR 800.004 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 10 Energy 4 2014-01-01 2014-01-01 false Eligibility. 800.004 Section 800.004 Energy DEPARTMENT OF ENERGY LOANS FOR BID OR PROPOSAL PREPARATION BY MINORITY BUSINESS ENTERPRISES SEEKING DOE CONTRACTS AND ASSISTANCE General § 800.004 Eligibility. In order to be eligible for a loan, an applicant must be a...

  5. 10 CFR 800.004 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 10 Energy 4 2013-01-01 2013-01-01 false Eligibility. 800.004 Section 800.004 Energy DEPARTMENT OF ENERGY LOANS FOR BID OR PROPOSAL PREPARATION BY MINORITY BUSINESS ENTERPRISES SEEKING DOE CONTRACTS AND ASSISTANCE General § 800.004 Eligibility. In order to be eligible for a loan, an applicant must be a...

  6. 10 CFR 800.004 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 10 Energy 4 2011-01-01 2011-01-01 false Eligibility. 800.004 Section 800.004 Energy DEPARTMENT OF ENERGY LOANS FOR BID OR PROPOSAL PREPARATION BY MINORITY BUSINESS ENTERPRISES SEEKING DOE CONTRACTS AND ASSISTANCE General § 800.004 Eligibility. In order to be eligible for a loan, an applicant must be a...

  7. 49 CFR 266.7 - Project eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Project eligibility. 266.7 Section 266.7... TRANSPORTATION ACT § 266.7 Project eligibility. (a) Rail service continuation assistance, acquisition assistance and substitute service assistance. A project is eligible for assistance under § 266.3(a) (1), (2),...

  8. 7 CFR 4280.122 - Project eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 15 2010-01-01 2010-01-01 false Project eligibility. 4280.122 Section 4280.122... Efficiency Improvements Program Section B. Guaranteed Loans § 4280.122 Project eligibility. For a project to be eligible to receive a guaranteed loan under this subpart, the project must meet each of...

  9. 7 CFR 1739.11 - Eligible project.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 11 2010-01-01 2010-01-01 false Eligible project. 1739.11 Section 1739.11 Agriculture... BROADBAND GRANT PROGRAM Community Connect Grant Program § 1739.11 Eligible project. To be eligible for a grant, the Project must: (a) Serve a Rural Area where Broadband Transmission Service does not...

  10. 44 CFR 80.11 - Project eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 44 Emergency Management and Assistance 1 2010-10-01 2010-10-01 false Project eligibility. 80.11... RELOCATION FOR OPEN SPACE Requirements Prior to Award § 80.11 Project eligibility. (a) Voluntary participation. Eligible acquisition projects are those where the property owner participates voluntarily,...

  11. 7 CFR 1434.5 - Eligible honey.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 10 2012-01-01 2012-01-01 false Eligible honey. 1434.5 Section 1434.5 Agriculture... FOR HONEY § 1434.5 Eligible honey. To be eligible for a loan, the honey must: (a) Have been produced... merchantable quality deemed by CCC to be suitable for loan; that is, the honey: (1) Is not adulterated; (2)...

  12. 7 CFR 1434.5 - Eligible honey.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 10 2013-01-01 2013-01-01 false Eligible honey. 1434.5 Section 1434.5 Agriculture... FOR HONEY § 1434.5 Eligible honey. To be eligible for a loan, the honey must: (a) Have been produced... merchantable quality deemed by CCC to be suitable for loan; that is, the honey: (1) Is not adulterated; (2)...

  13. 7 CFR 623.3 - Eligible person.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 6 2013-01-01 2013-01-01 false Eligible person. 623.3 Section 623.3 Agriculture Regulations of the Department of Agriculture (Continued) NATURAL RESOURCES CONSERVATION SERVICE, DEPARTMENT OF AGRICULTURE WATER RESOURCES EMERGENCY WETLANDS RESERVE PROGRAM § 623.3 Eligible person. To be eligible...

  14. 47 CFR 90.33 - General eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES Industrial/Business Radio Pool § 90.33 General eligibility. (a) In addition to the eligibility shown in the Industrial/Business Pool, eligibility is also provided for any corporation...

  15. 25 CFR 700.205 - Eligibility requirements.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 25 Indians 2 2013-04-01 2013-04-01 false Eligibility requirements. 700.205 Section 700.205 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES Assistance Payments (Incentive Bonus) § 700.205 Eligibility requirements. A certified eligible head...

  16. 25 CFR 700.147 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 25 Indians 2 2010-04-01 2010-04-01 false Eligibility. 700.147 Section 700.147 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES General Relocation Requirements § 700.147 Eligibility. (a) To be eligible for services provided for under the...

  17. 25 CFR 700.147 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 25 Indians 2 2013-04-01 2013-04-01 false Eligibility. 700.147 Section 700.147 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES General Relocation Requirements § 700.147 Eligibility. (a) To be eligible for services provided for under the...

  18. 25 CFR 700.147 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 25 Indians 2 2012-04-01 2012-04-01 false Eligibility. 700.147 Section 700.147 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES General Relocation Requirements § 700.147 Eligibility. (a) To be eligible for services provided for under the...

  19. 25 CFR 700.147 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 25 Indians 2 2011-04-01 2011-04-01 false Eligibility. 700.147 Section 700.147 Indians THE OFFICE OF NAVAJO AND HOPI INDIAN RELOCATION COMMISSION OPERATIONS AND RELOCATION PROCEDURES General Relocation Requirements § 700.147 Eligibility. (a) To be eligible for services provided for under the...

  20. 7 CFR 623.3 - Eligible person.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 6 2010-01-01 2010-01-01 false Eligible person. 623.3 Section 623.3 Agriculture Regulations of the Department of Agriculture (Continued) NATURAL RESOURCES CONSERVATION SERVICE, DEPARTMENT OF AGRICULTURE WATER RESOURCES EMERGENCY WETLANDS RESERVE PROGRAM § 623.3 Eligible person. To be eligible...

  1. 47 CFR 54.640 - Eligible vendors.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 3 2013-10-01 2013-10-01 false Eligible vendors. 54.640 Section 54.640 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) UNIVERSAL SERVICE Universal Service Support for Health Care Providers Healthcare Connect Fund § 54.640 Eligible vendors. (a) Eligibility. For purposes of...

  2. 10 CFR 611.203 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 10 Energy 4 2012-01-01 2012-01-01 false Eligibility. 611.203 Section 611.203 Energy DEPARTMENT OF ENERGY (CONTINUED) ASSISTANCE REGULATIONS ADVANCED TECHNOLOGY VEHICLES MANUFACTURER ASSISTANCE PROGRAM Facility/Funding Awards § 611.203 Eligibility. In order to be eligible for an award, an applicant must...

  3. 10 CFR 611.203 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 10 Energy 4 2013-01-01 2013-01-01 false Eligibility. 611.203 Section 611.203 Energy DEPARTMENT OF ENERGY (CONTINUED) ASSISTANCE REGULATIONS ADVANCED TECHNOLOGY VEHICLES MANUFACTURER ASSISTANCE PROGRAM Facility/Funding Awards § 611.203 Eligibility. In order to be eligible for an award, an applicant must...

  4. 10 CFR 611.203 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 10 Energy 4 2014-01-01 2014-01-01 false Eligibility. 611.203 Section 611.203 Energy DEPARTMENT OF ENERGY (CONTINUED) ASSISTANCE REGULATIONS ADVANCED TECHNOLOGY VEHICLES MANUFACTURER ASSISTANCE PROGRAM Facility/Funding Awards § 611.203 Eligibility. In order to be eligible for an award, an applicant must...

  5. 10 CFR 611.203 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 10 Energy 4 2010-01-01 2010-01-01 false Eligibility. 611.203 Section 611.203 Energy DEPARTMENT OF ENERGY (CONTINUED) ASSISTANCE REGULATIONS ADVANCED TECHNOLOGY VEHICLES MANUFACTURER ASSISTANCE PROGRAM Facility/Funding Awards § 611.203 Eligibility. In order to be eligible for an award, an applicant must...

  6. 10 CFR 611.203 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 10 Energy 4 2011-01-01 2011-01-01 false Eligibility. 611.203 Section 611.203 Energy DEPARTMENT OF ENERGY (CONTINUED) ASSISTANCE REGULATIONS ADVANCED TECHNOLOGY VEHICLES MANUFACTURER ASSISTANCE PROGRAM Facility/Funding Awards § 611.203 Eligibility. In order to be eligible for an award, an applicant must...

  7. 24 CFR 35.1135 - Eligible costs.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 24 Housing and Urban Development 1 2010-04-01 2010-04-01 false Eligible costs. 35.1135 Section 35....1135 Eligible costs. A PHA may use financial assistance received under the modernization program (CIAP....112 of this title. Eligible costs include: (a) Evaluation and insurance costs. Evaluation and...

  8. 24 CFR 35.1135 - Eligible costs.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 24 Housing and Urban Development 1 2011-04-01 2011-04-01 false Eligible costs. 35.1135 Section 35....1135 Eligible costs. A PHA may use financial assistance received under the modernization program (CIAP....112 of this title. Eligible costs include: (a) Evaluation and insurance costs. Evaluation and...

  9. 7 CFR 1434.5 - Eligible honey.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 10 2010-01-01 2010-01-01 false Eligible honey. 1434.5 Section 1434.5 Agriculture... FOR HONEY § 1434.5 Eligible honey. To be eligible for a loan, the honey must: (a) Have been produced... merchantable quality deemed by CCC to be suitable for loan; that is, the honey: (1) Is not adulterated; (2)...

  10. 12 CFR 1807.301 - Eligible activities.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 12 Banks and Banking 9 2012-01-01 2012-01-01 false Eligible activities. 1807.301 Section 1807.301 Banks and Banking COMMUNITY DEVELOPMENT FINANCIAL INSTITUTIONS FUND, DEPARTMENT OF THE TREASURY CAPITAL MAGNET FUND Use of Funds/Eligible Activities § 1807.301 Eligible activities. Grants awarded under...

  11. 12 CFR 1807.301 - Eligible activities.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 12 Banks and Banking 9 2013-01-01 2013-01-01 false Eligible activities. 1807.301 Section 1807.301 Banks and Banking COMMUNITY DEVELOPMENT FINANCIAL INSTITUTIONS FUND, DEPARTMENT OF THE TREASURY CAPITAL MAGNET FUND Use of Funds/Eligible Activities § 1807.301 Eligible activities. Grants awarded under...

  12. 12 CFR 1807.301 - Eligible activities.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 12 Banks and Banking 7 2011-01-01 2011-01-01 false Eligible activities. 1807.301 Section 1807.301 Banks and Banking COMMUNITY DEVELOPMENT FINANCIAL INSTITUTIONS FUND, DEPARTMENT OF THE TREASURY CAPITAL MAGNET FUND Use of Funds/Eligible Activities § 1807.301 Eligible activities. Grants awarded under...

  13. 12 CFR 1807.301 - Eligible activities.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 12 Banks and Banking 10 2014-01-01 2014-01-01 false Eligible activities. 1807.301 Section 1807.301 Banks and Banking COMMUNITY DEVELOPMENT FINANCIAL INSTITUTIONS FUND, DEPARTMENT OF THE TREASURY CAPITAL MAGNET FUND Use of Funds/Eligible Activities § 1807.301 Eligible activities. Grants awarded under...

  14. 5 CFR 352.904 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 5 Administrative Personnel 1 2013-01-01 2013-01-01 false Eligibility. 352.904 Section 352.904 Administrative Personnel OFFICE OF PERSONNEL MANAGEMENT CIVIL SERVICE REGULATIONS REEMPLOYMENT RIGHTS Reemployment Rights After Service With the Panama Canal Commission § 352.904 Eligibility. This subpart covers only eligible employees transferred...

  15. 24 CFR 1006.301 - Eligible families.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 24 Housing and Urban Development 4 2010-04-01 2010-04-01 false Eligible families. 1006.301 Section... NATIVE HAWAIIAN HOUSING BLOCK GRANT PROGRAM Program Requirements § 1006.301 Eligible families. (a... Hawaiian families who are eligible to reside on the Hawaiian Home Lands, except as provided...

  16. 40 CFR 35.573 - Eligible Tribe.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ....578 if it has demonstrated eligibility to be treated as a State under 40 CFR 49.6. An Intertribal Consortium consisting of Tribes that have demonstrated eligibility to be treated as States under 40 CFR 49.6 is also eligible for financial assistance. (b) Tribes that have not made a demonstration under 40...

  17. 44 CFR 79.6 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... develop or update the flood portion of any mitigation plan. Planning grants are not eligible for funding... already been initiated or completed are not eligible for funding, and will not be considered. Eligible... buildings and/or structures to areas outside of the floodplain to convert the property to open space use...

  18. 7 CFR 1150.108 - Eligible organization.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 9 2012-01-01 2012-01-01 false Eligible organization. 1150.108 Section 1150.108 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing... Order Definitions § 1150.108 Eligible organization. Eligible organization means any organization...

  19. 31 CFR 321.2 - Eligible organizations.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 2 2011-07-01 2011-07-01 false Eligible organizations. 321.2 Section... § 321.2 Eligible organizations. (a) Organizations eligible to apply for qualification and to serve as.... (b)(1) An organization that desires to redeem securities must first qualify as a paying agent....

  20. 7 CFR 1250.313 - Eligible organization.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 10 2010-01-01 2010-01-01 false Eligible organization. 1250.313 Section 1250.313... Research and Promotion Order Definitions § 1250.313 Eligible organization. Eligible organization means any organization, association, or cooperative which represents egg producers of any egg producing area of...

  1. 7 CFR 1150.108 - Eligible organization.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 9 2010-01-01 2009-01-01 true Eligible organization. 1150.108 Section 1150.108 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing... Order Definitions § 1150.108 Eligible organization. Eligible organization means any organization...

  2. 7 CFR 1250.313 - Eligible organization.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 10 2012-01-01 2012-01-01 false Eligible organization. 1250.313 Section 1250.313... Research and Promotion Order Definitions § 1250.313 Eligible organization. Eligible organization means any organization, association, or cooperative which represents egg producers of any egg producing area of...

  3. 7 CFR 1250.313 - Eligible organization.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 10 2011-01-01 2011-01-01 false Eligible organization. 1250.313 Section 1250.313... Research and Promotion Order Definitions § 1250.313 Eligible organization. Eligible organization means any organization, association, or cooperative which represents egg producers of any egg producing area of...

  4. 7 CFR 1150.108 - Eligible organization.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 9 2011-01-01 2011-01-01 false Eligible organization. 1150.108 Section 1150.108 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing... Order Definitions § 1150.108 Eligible organization. Eligible organization means any organization...

  5. 7 CFR 1250.313 - Eligible organization.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 10 2014-01-01 2014-01-01 false Eligible organization. 1250.313 Section 1250.313... Research and Promotion Order Definitions § 1250.313 Eligible organization. Eligible organization means any organization, association, or cooperative which represents egg producers of any egg producing area of...

  6. 7 CFR 1150.108 - Eligible organization.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 9 2013-01-01 2013-01-01 false Eligible organization. 1150.108 Section 1150.108 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (MARKETING... Order Definitions § 1150.108 Eligible organization. Eligible organization means any organization...

  7. 7 CFR 1220.109 - Eligible organization.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 10 2013-01-01 2013-01-01 false Eligible organization. 1220.109 Section 1220.109... CONSUMER INFORMATION Soybean Promotion and Research Order Definitions § 1220.109 Eligible organization. The term eligible organization means any organization which has been certified by the Secretary pursuant...

  8. 31 CFR 321.2 - Eligible organizations.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 2 2012-07-01 2012-07-01 false Eligible organizations. 321.2 Section... Qualification § 321.2 Eligible organizations. (a) Organizations eligible to apply for qualification and to serve... authority; and (4) Maintain regular offices for the transaction of business. (b) An organization...

  9. 7 CFR 1150.108 - Eligible organization.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 9 2014-01-01 2013-01-01 true Eligible organization. 1150.108 Section 1150.108 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (MARKETING... Order Definitions § 1150.108 Eligible organization. Eligible organization means any organization...

  10. 7 CFR 1220.109 - Eligible organization.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 10 2012-01-01 2012-01-01 false Eligible organization. 1220.109 Section 1220.109... CONSUMER INFORMATION Soybean Promotion and Research Order Definitions § 1220.109 Eligible organization. The term eligible organization means any organization which has been certified by the Secretary pursuant...

  11. 7 CFR 1220.109 - Eligible organization.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 10 2010-01-01 2010-01-01 false Eligible organization. 1220.109 Section 1220.109... CONSUMER INFORMATION Soybean Promotion and Research Order Definitions § 1220.109 Eligible organization. The term eligible organization means any organization which has been certified by the Secretary pursuant...

  12. 31 CFR 321.2 - Eligible organizations.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 2 2013-07-01 2013-07-01 false Eligible organizations. 321.2 Section... Qualification § 321.2 Eligible organizations. (a) Organizations eligible to apply for qualification and to serve... authority; and (4) Maintain regular offices for the transaction of business. (b) An organization...

  13. 31 CFR 321.2 - Eligible organizations.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 2 2010-07-01 2010-07-01 false Eligible organizations. 321.2 Section... § 321.2 Eligible organizations. (a) Organizations eligible to apply for qualification and to serve as.... (b)(1) An organization that desires to redeem securities must first qualify as a paying agent....

  14. 31 CFR 321.2 - Eligible organizations.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance: Treasury 2 2014-07-01 2014-07-01 false Eligible organizations. 321.2 Section... Qualification § 321.2 Eligible organizations. (a) Organizations eligible to apply for qualification and to serve... authority; and (4) Maintain regular offices for the transaction of business. (b) An organization...

  15. 7 CFR 1220.109 - Eligible organization.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 10 2011-01-01 2011-01-01 false Eligible organization. 1220.109 Section 1220.109... CONSUMER INFORMATION Soybean Promotion and Research Order Definitions § 1220.109 Eligible organization. The term eligible organization means any organization which has been certified by the Secretary pursuant...

  16. 7 CFR 1220.109 - Eligible organization.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 10 2014-01-01 2014-01-01 false Eligible organization. 1220.109 Section 1220.109... CONSUMER INFORMATION Soybean Promotion and Research Order Definitions § 1220.109 Eligible organization. The term eligible organization means any organization which has been certified by the Secretary pursuant...

  17. 7 CFR 1250.313 - Eligible organization.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 10 2013-01-01 2013-01-01 false Eligible organization. 1250.313 Section 1250.313... Research and Promotion Order Definitions § 1250.313 Eligible organization. Eligible organization means any organization, association, or cooperative which represents egg producers of any egg producing area of...

  18. 12 CFR 615.5140 - Eligible investments.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 12 Banks and Banking 7 2014-01-01 2014-01-01 false Eligible investments. 615.5140 Section 615.5140... POLICIES AND OPERATIONS, AND FUNDING OPERATIONS Investment Management § 615.5140 Eligible investments. (a) You may hold only the following types of investments listed in the Investment Eligibility...

  19. 12 CFR 615.5140 - Eligible investments.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 12 Banks and Banking 7 2013-01-01 2013-01-01 false Eligible investments. 615.5140 Section 615.5140... POLICIES AND OPERATIONS, AND FUNDING OPERATIONS Investment Management § 615.5140 Eligible investments. (a) You may hold only the following types of investments listed in the Investment Eligibility...

  20. 12 CFR 615.5140 - Eligible investments.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 12 Banks and Banking 7 2012-01-01 2012-01-01 false Eligible investments. 615.5140 Section 615.5140... POLICIES AND OPERATIONS, AND FUNDING OPERATIONS Investment Management § 615.5140 Eligible investments. (a) You may hold only the following types of investments listed in the Investment Eligibility...

  1. 7 CFR 1709.107 - Eligible communities.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 11 2010-01-01 2010-01-01 false Eligible communities. 1709.107 Section 1709.107... AGRICULTURE ASSISTANCE TO HIGH ENERGY COST COMMUNITIES RUS High Energy Cost Grant Program § 1709.107 Eligible communities. (a) An eligible community under this program is one in which the average home energy costs...

  2. 42 CFR 56.103 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Eligibility. 56.103 Section 56.103 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES GRANTS GRANTS FOR MIGRANT HEALTH SERVICES General Provisions § 56.103 Eligibility. Any public or nonprofit private entity is eligible to apply for...

  3. 7 CFR 1786.54 - Eligibility criteria.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... AGRICULTURE (CONTINUED) PREPAYMENT OF RUS GUARANTEED AND INSURED LOANS TO ELECTRIC AND TELEPHONE BORROWERS Special Discounted Prepayments on RUS Direct/Insured Loans § 1786.54 Eligibility criteria. To be eligible... 7 Agriculture 12 2010-01-01 2010-01-01 false Eligibility criteria. 1786.54 Section...

  4. 7 CFR 1720.5 - Eligibility criteria.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 11 2010-01-01 2010-01-01 false Eligibility criteria. 1720.5 Section 1720.5... Eligibility criteria. (a) To be eligible to participate in the program, a guaranteed lender must be: (1) A bank or other lending institution organized as a private, not-for-profit cooperative association,...

  5. 24 CFR 2700.101 - Eligible properties.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 24 Housing and Urban Development 5 2013-04-01 2013-04-01 false Eligible properties. 2700.101... EMERGENCY HOMEOWNERS' LOAN PROGRAM Eligibility § 2700.101 Eligible properties. (a) In order to qualify for an emergency assistance under this part, the property of the homeowner seeking assistance must:...

  6. 7 CFR 760.503 - Eligible losses.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... SPECIAL PROGRAMS INDEMNITY PAYMENT PROGRAMS Tree Assistance Program § 760.503 Eligible losses. (a) To be considered an eligible loss under this subpart: (1) Eligible trees, bushes, or vines must have been lost or... reasonable and available measures; and (4) The trees, bushes, or vines, in the absence of a natural...

  7. 7 CFR 760.503 - Eligible losses.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... SPECIAL PROGRAMS INDEMNITY PAYMENT PROGRAMS Tree Assistance Program § 760.503 Eligible losses. (a) To be considered an eligible loss under this subpart: (1) Eligible trees, bushes, or vines must have been lost or... reasonable and available measures; and (4) The trees, bushes, or vines, in the absence of a natural...

  8. 7 CFR 760.503 - Eligible losses.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... SPECIAL PROGRAMS INDEMNITY PAYMENT PROGRAMS Tree Assistance Program § 760.503 Eligible losses. (a) To be considered an eligible loss under this subpart: (1) Eligible trees, bushes, or vines must have been lost or... reasonable and available measures; and (4) The trees, bushes, or vines, in the absence of a natural...

  9. 7 CFR 760.503 - Eligible losses.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... SPECIAL PROGRAMS INDEMNITY PAYMENT PROGRAMS Tree Assistance Program § 760.503 Eligible losses. (a) To be considered an eligible loss under this subpart: (1) Eligible trees, bushes, or vines must have been lost or... reasonable and available measures; and (4) The trees, bushes, or vines, in the absence of a natural...

  10. 24 CFR 206.45 - Eligible properties.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... insurance for reverse mortgages is not available for reasonable rates in a State, then the Secretary may... DEVELOPMENT MORTGAGE AND LOAN INSURANCE PROGRAMS UNDER NATIONAL HOUSING ACT AND OTHER AUTHORITIES HOME EQUITY CONVERSION MORTGAGE INSURANCE Eligibility; Endorsement Eligible Properties § 206.45 Eligible properties....

  11. 44 CFR 206.373 - Eligibility criteria.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... Eligibility criteria. (a) Local government. (1) The local government must be located within the area eligible for assistance under a major disaster declaration. In addition, State law must not prohibit the local... determining the eligibility of a local government for a Special Community Disaster Loan include the loss...

  12. 44 CFR 206.373 - Eligibility criteria.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... Eligibility criteria. (a) Local government. (1) The local government must be located within the area eligible for assistance under a major disaster declaration. In addition, State law must not prohibit the local... determining the eligibility of a local government for a Special Community Disaster Loan include the loss...

  13. 10 CFR 602.6 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 10 Energy 4 2010-01-01 2010-01-01 false Eligibility. 602.6 Section 602.6 Energy DEPARTMENT OF ENERGY (CONTINUED) ASSISTANCE REGULATIONS EPIDEMIOLOGY AND OTHER HEALTH STUDIES FINANCIAL ASSISTANCE PROGRAM § 602.6 Eligibility. Any individual or entity other than a Federal agency is eligible for a...

  14. The Accreditation-Eligibility Link.

    ERIC Educational Resources Information Center

    Levin, Nora Jean

    1981-01-01

    Public policy rests on the unreliable assumption that postsecondary education institutions and programs approved by nationally recognized private accrediting agencies are bona fide providers of educational services, worthy of students' time, effort, and money and of federal funds. Rather, federal fund eligibility should focus on measures of…

  15. OMVPE synthesis and characterization of heterostructures containing arsenide/phosphide interfaces

    NASA Astrophysics Data System (ADS)

    Emerson, David Todd

    1997-12-01

    The mixed crystal quaternary Gasb{x}Insb{1-x}Assb{y}Psb{1-y} deposited on GaAs and InP substrates is a not only a versatile but also a technologically important materials system. With the group III and group V mole fractions chosen appropriately, the room temperature energy bandgap of the lattice matched alloy can span nearly the entire range from 0.74 to 1.9 eV. In this dissertation, various aspects of the deposition of heterostructures incorporating Gasb{x}Insb{1-x}Assb{y}Psb{1-y} and its constituent binaries and ternaries are discussed. Furthermore, a variety of characterization techniques are used to assess the single layers and heterostructures including double crystal x-ray diffraction, room and low temperature photoluminescence, atomic force and transmission electron microscopy, and Raman scattering. Throughout this dissertation, the importance of using complimentary characterization techniques when assessing complex heterostructures is stressed. In preparation for the study of the GaAs-based structures, strained and partially relaxed GaAsP layers are grown and characterized. New results concerning the application of the Modified Random Element Isodisplacement Model corrected for strain are reported. Then, to investigate the formation of mixed group V (i.e. arsenide to phosphide) interfaces in GaAs-based heterostructures, a series of GaInP/GaAsP single quantum wells are prepared. Various mechanisms leading to layer intermixing and interface degradation are discussed. The effect of adding phosphorous to the wells on the heterostructure energy band alignment is addressed both experimentally and theoretically. In addition, optical methods are used to assess the structural properties of GaInP/GaAsP 80 A period superlattices, and a quantitative technique for determining the layer composition of the thin, strained GaAsP layers in these superlattices is developed. Formation of mixed group V interfaces in GaInAs/InP superlattices deposited on InP substrates is also

  16. 20 CFR 645.212 - Who may be served under the general eligibility and noncustodial parent eligibility (primary...

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... eligibility and noncustodial parent eligibility (primary eligibility) provision? 645.212 Section 645.212... general eligibility and noncustodial parent eligibility (primary eligibility) provision? An individual may... individuals (as well as children of noncustodial parents) exempted from the time limits due to hardship...

  17. The effect of high-temperature heat treatment on the electrical power factor and morphology of silicon germanium-gallium phosphide alloys

    NASA Astrophysics Data System (ADS)

    Min, Gao; Rowe, D. M.

    1991-10-01

    The results of an experimental investigation into the effect of high-temperature heat treatment on the electrical resistivity and Seeback coefficient of silicon germanium-gallium phosphide alloys and the accompanying changes in morphology are reported. Substantial changes in the electrical properties and in morphology were observed after 15 min and 4-h periods of heat treatment, respectively. A less significant decrease in electrical resistivity accompanied further heat treatment. However, the Seeback coefficient remained almost constant which resulted in an increase in the electrical power factor. Prior to heat treatment, the alloy consisted of host matrix and a silicon-rich black phase. Heat treatment was accompanied by the appearance of a white phase which was rich in germanium and gallium phosphide.

  18. Aqueous corrosion of phosphide minerals from iron meteorites: a highly reactive source of prebiotic phosphorus on the surface of the early Earth.

    PubMed

    Pasek, Matthew A; Lauretta, Dante S

    2005-08-01

    We present the results of an experimental study of aqueous corrosion of Fe-phosphide under conditions relevant to the early Earth. The results strongly suggest that iron meteorites were an important source of reactive phosphorus (P), a requirement for the formation of P-based life. We further demonstrate that iron meteorites were an abundant source of phosphide minerals early in Earth history. Phosphide corrosion was studied in five different solutions: deionized water, deionized water buffered with sodium bicarbonate, deionized water with dissolved magnesium and calcium chlorides, deionized water containing ethanol and acetic acid, and deionized water containing the chlorides, ethanol, and acetic acid. Experiments were performed in the presence of both air and pure Ar gas to evaluate the effect of atmospheric chemistry. Phosphide corrosion in deionized water results in a metastable mixture of mixed-valence, P-bearing ions including pyrophosphate and triphosphate, key components for metabolism in modern life. In a pH-buffered solution of NaHCO(3), the condensed and reduced species diphosphonate is an abundant corrosion product. Corrosion in ethanol- and acetic acid-containing solutions yields additional P-bearing organic molecules, including acetyl phosphonate and a cyclic triphosphorus molecule. Phosphonate is a major corrosion product of all experiments and is the only P-bearing molecule that persists in solutions with high concentrations of magnesium and calcium chlorides, which suggests that phosphonate may have been a primitive oceanic source of P. The stability and reactivity of phosphonate and hypophosphite in solution were investigated to elucidate reaction mechanisms and the role of mineral catalysts on P-solution chemistry. Phosphonate oxidation is rapid in the presence of Fe metal but negligible in the presence of magnetite and in the control sample. The rate of hypophosphite oxidation is independent of reaction substrate.

  19. Comparative Study on the Effectiveness of Coumavec® and Zinc Phosphide in Controlling Zoonotic Cutaneous Leishmaniasis in a Hyperendemic Focus in Central Iran

    PubMed Central

    Veysi, A; Vatandoost, H; Yaghoobi-Ershadi, MR; Arandian, MH; Jafari, R; Hosseini, M; abdoli, H; Rassi, Y; Heidari, K; Sadjadi, A; Fadaei, R; Ramazanpour, J; Aminian, K; Shirzadi, MR; Akhavan, AA

    2012-01-01

    Background Zoonotic cutaneous leishmaniasis (ZCL) is an increasing health problems in many rural areas of Iran. The aim of this study was to introduce a new alternative rodenticide to control the reservoirs of ZCL, its effect on the vector density and the incidence of the disease in hyperendemic focus of Esfahan County, central Iran. Methods: The study was carried out from January 2011 to January 2012. In intervention areas, rodent control operation was conducted using zinc phosphide or Coumavec®. Active case findings were done by house-to-house visits once every season during 2011–2012. To evaluate the effect of rodent control operation on the vector density, sand flies were collected twice a month using sticky traps. Results: The reduction rate of rodent holes in intervention areas with Coumavec® and zinc phosphide were 48.46% and 58.15% respectively, whereas in control area results showed 6.66 folds intensification. The Incidence of ZCL significantly reduced in the treated areas. Totally, 3200 adult sand flies were collected and identified in the intervention and control areas. In the treated area with zinc phosphide, the density of Phlebotomus papatasi was higher in outdoors in contrast with the treated area by Coumavec® which the density of the sand fly was higher in indoors. Conclusion: Both rodenticides were effective on the incidence of ZCL and the population of the reservoirs as well. Coumavec® seems to be effective on the outdoor density of the vector. This combination of rodenticide-insecticide could be a suitable alternative for zinc phosphide while bait shyness or behavioral resistance is occurred. PMID:23293775

  20. Studies of high temperature ternary phases in mixed-metal-rich early transition metal sulfide and phosphide systems

    SciTech Connect

    Marking, G.A.

    1994-01-04

    Investigations of ternary mixed early transition metal-rich sulfide and phosphide systems resulted in the discovery of new structures and new phases. A new series of Zr and Hf - group V transition metal - sulfur K-phases was synthesized and crystallographically characterized. When the group V transition metal was Nb or Ta, the unit cell volume was larger than any previously reported K-phase. The presence of adventitious oxygen was determined in two K-phases through a combination of neutron scattering and X-ray diffraction experiments. A compound Hf{sub 10}Ta{sub 3}S{sub 3} was found to crystallize in a new-structure type similar to the known gamma brasses. This structure is unique in that it is the only reported {open_quotes}stuffed{close_quotes} gamma-brass type structure. The metal components, Hf and Ta, are larger in size and more electropositive than the metals found in normal gamma brasses (e.g. Cu and Zn) and because of the larger metallic radii, sulfur can be incorporated into the structure where it plays an integral role in stabilizing this phase relative to others. X-ray single-crystal, X-ray powder and neutron powder refinements were performed on this structure. A new structure was found in the ternary Nb-Zr-P system which has characteristics in common with many known early transition metal-rich sulfides, selenides, and phosphides. This structure has the simplest known interconnection of the basic building blocks known for this structural class. Anomalous scattering was a powerful tool for differentiating between Zr and Nb when using Mo K{alpha} X-radiation. The compounds ZrNbP and HfNbP formed in the space group Prima with the simple Co{sub 2}Si structure which is among the most common structures found for crystalline solid materials. Solid solution compounds in the Ta-Nb-P, Ta-Zr-P, Nb-Zr-P, Hf-Nb-P, and Hf-Zr-S systems were crystallographically characterized. The structural information corroborated ideas about bonding in metal-rich compounds.

  1. 7 CFR 1416.203 - Eligible livestock.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... eligible county in accordance with 7 CFR 760.101, must meet all the following: (i) Be catfish or crawfish... any county provided in § 1416.2(d) that was not an eligible county according to 7 CFR 760.101, must... provided in § 1416.2(d) that was not an eligible county as provided in 7 CFR 760.101; (3) Died as a...

  2. 7 CFR 1416.203 - Eligible livestock.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... eligible county in accordance with 7 CFR 760.101, must meet all the following: (i) Be catfish or crawfish... any county provided in § 1416.2(d) that was not an eligible county according to 7 CFR 760.101, must... provided in § 1416.2(d) that was not an eligible county as provided in 7 CFR 760.101; (3) Died as a...

  3. 7 CFR 1416.203 - Eligible livestock.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... eligible county in accordance with 7 CFR 760.101, must meet all the following: (i) Be catfish or crawfish... any county provided in § 1416.2(d) that was not an eligible county according to 7 CFR 760.101, must... provided in § 1416.2(d) that was not an eligible county as provided in 7 CFR 760.101; (3) Died as a...

  4. 7 CFR 1416.203 - Eligible livestock.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... eligible county in accordance with 7 CFR 760.101, must meet all the following: (i) Be catfish or crawfish... any county provided in § 1416.2(d) that was not an eligible county according to 7 CFR 760.101, must... provided in § 1416.2(d) that was not an eligible county as provided in 7 CFR 760.101; (3) Died as a...

  5. 7 CFR 1416.203 - Eligible livestock.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... eligible county in accordance with 7 CFR 760.101, must meet all the following: (i) Be catfish or crawfish... any county provided in § 1416.2(d) that was not an eligible county according to 7 CFR 760.101, must... provided in § 1416.2(d) that was not an eligible county as provided in 7 CFR 760.101; (3) Died as a...

  6. 10 CFR 452.4 - Eligibility requirements.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... party's eligible cellulosic biofuels production facility; (iii) Demonstrate that the cellulosic biofuel... to significantly contribute to the goal of 1 billion gallons of refined cellulosic biofuel by...

  7. 10 CFR 452.4 - Eligibility requirements.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... party's eligible cellulosic biofuels production facility; (iii) Demonstrate that the cellulosic biofuel... to significantly contribute to the goal of 1 billion gallons of refined cellulosic biofuel by...

  8. 10 CFR 452.4 - Eligibility requirements.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... party's eligible cellulosic biofuels production facility; (iii) Demonstrate that the cellulosic biofuel... to significantly contribute to the goal of 1 billion gallons of refined cellulosic biofuel by...

  9. 10 CFR 452.4 - Eligibility requirements.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... party's eligible cellulosic biofuels production facility; (iii) Demonstrate that the cellulosic biofuel... to significantly contribute to the goal of 1 billion gallons of refined cellulosic biofuel by...

  10. 10 CFR 452.4 - Eligibility requirements.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... party's eligible cellulosic biofuels production facility; (iii) Demonstrate that the cellulosic biofuel... to significantly contribute to the goal of 1 billion gallons of refined cellulosic biofuel by...

  11. 10 CFR 217.3 - Program eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ..., space, and any directly related activity. Other eligible programs include emergency preparedness activities conducted pursuant to title VI of the Robert T. Stafford Disaster Relief and Emergency...

  12. 10 CFR 217.3 - Program eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ..., space, and any directly related activity. Other eligible programs include emergency preparedness activities conducted pursuant to title VI of the Robert T. Stafford Disaster Relief and Emergency...

  13. 10 CFR 217.3 - Program eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ..., space, and any directly related activity. Other eligible programs include emergency preparedness activities conducted pursuant to title VI of the Robert T. Stafford Disaster Relief and Emergency...

  14. 42 CFR 435.640 - Protected Medicaid eligibility for individuals eligible in December 1973.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... eligible in December 1973. 435.640 Section 435.640 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES... Requirements and Options § 435.640 Protected Medicaid eligibility for individuals eligible in December 1973. In determining whether individuals continue to meet the income requirements used in December 1973, for...

  15. 42 CFR 435.640 - Protected Medicaid eligibility for individuals eligible in December 1973.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... eligible in December 1973. 435.640 Section 435.640 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES... Requirements and Options § 435.640 Protected Medicaid eligibility for individuals eligible in December 1973. In determining whether individuals continue to meet the income requirements used in December 1973, for...

  16. 42 CFR 435.640 - Protected Medicaid eligibility for individuals eligible in December 1973.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... eligible in December 1973. 435.640 Section 435.640 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES... Requirements and Options § 435.640 Protected Medicaid eligibility for individuals eligible in December 1973. In determining whether individuals continue to meet the income requirements used in December 1973, for...

  17. 42 CFR 435.640 - Protected Medicaid eligibility for individuals eligible in December 1973.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... eligible in December 1973. 435.640 Section 435.640 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES... Requirements and Options § 435.640 Protected Medicaid eligibility for individuals eligible in December 1973. In determining whether individuals continue to meet the income requirements used in December 1973, for...

  18. 42 CFR 435.640 - Protected Medicaid eligibility for individuals eligible in December 1973.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... eligible in December 1973. 435.640 Section 435.640 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES... Requirements and Options § 435.640 Protected Medicaid eligibility for individuals eligible in December 1973. In determining whether individuals continue to meet the income requirements used in December 1973, for...

  19. PLEURAL EFFECTS OF INDIUM PHOSPHIDE IN B6C3F1 MICE: NONFIBROUS PARTICULATE INDUCED PLEURAL FIBROSIS

    PubMed Central

    Kirby, Patrick J.; Shines, Cassandra J.; Taylor, Genie J.; Bousquet, Ronald W.; Price, Herman C.; Everitt, Jeffrey I.; Morgan, Daniel L.

    2010-01-01

    The mechanism(s) by which chronic inhalation of indium phosphide (InP) particles causes pleural fibrosis is not known. Few studies of InP pleural toxicity have been conducted because of the challenges in conducting particulate inhalation exposures, and because the pleural lesions developed slowly over the 2-year inhalation study. The authors investigated whether InP (1 mg/kg) administered by a single oropharyngeal aspiration would cause pleural fibrosis in male B6C3F1 mice. By 28 days after treatment, protein and lactate dehydrogenase (LDH) were significantly increased in bronchoalveolar lavage fluid (BALF), but were unchanged in pleural lavage fluid (PLF). A pronounced pleural effusion characterized by significant increases in cytokines and a 3.7-fold increase in cell number was detected 28 days after InP treatment. Aspiration of soluble InCl3 caused a similar delayed pleural effusion; however, other soluble metals, insoluble particles, and fibers did not. The effusion caused by InP was accompanied by areas of pleural thickening and inflammation at day 28, and by pleural fibrosis at day 98. Aspiration of InP produced pleural fibrosis that was histologically similar to lesions caused by chronic inhalation exposure, and in a shorter time period. This oropharyngeal aspiration model was used to provide an initial characterization of the progression of pleural lesions caused by InP. PMID:19995279

  20. Boron nitride phosphide thin films grown on quartz substrate by hot-filament and plasma-assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Xu, S. Y.; Han, G. R.

    2004-10-01

    Boron nitride phosphide films are, for the first time, grown on transparent quartz substrate by hot filament and radio-frequency plasma co-assisted chemical vapor deposition technique. XPS, XRD, SEM, and UV measurements are performed to study the chemical composition, crystallization, microstructure, and optical absorption, respectively. A centipede-like microstructure and undulating ground morphology on the film surface are observed, and their growth mechanism is speculated upon. The chemical composition is determined as BN1-xPx, whose characteristic XRD peak is preliminarily identified. The optical band gap can be modulated between 5.52 eV and 3.74 eV, simply by adjusting the phosphorus content in BN1-xPx through modifying the PH3 flux during the film-deposition process. The merits of the BN1-xPx film, such as high ultraviolet photoelectric sensitivity with negligible sensitivity in the visible region, modifiable wide optical band gap, and good adhesion on transparent substrate, suggest potential applications for ultraviolet photo-electronics.

  1. Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

    NASA Astrophysics Data System (ADS)

    Sadwick, L. P.; Lee, P. P.; Patel, M.; Nikols, M.; Hwu, R. J.; Shield, J. E.; Streit, D. C.; Brehmer, D.; McCormick, K.; Allen, S. J.; Gedridge, R. W.

    1996-07-01

    We report the first known study of the growth of epitaxial dysprosium phosphide (DyP) grown on gallium arsenide (GaAs). DyP is lattice matched to GaAs, with the room-temperature mismatch being less than 0.01%. We have grown DyP on GaAs by gas-source and by solid-source molecular beam epitaxy using custom-designed group V thermal cracker cells and group III high temperature effusion cells. X-ray diffraction results show the DyP epilayer to be (001) single crystal on GaAs(001) substrate. Electrical and optical measurements performed to date are inconclusive as to whether DyP is a semi-metal or a semiconductor with a small band gap. The undoped films are n-type with measured electron concentrations on the order of 5 × 10 19-6 × 10 20cm -3 with mobilities of 1-10 cm 2/V · s. {DyP}/{GaAs} is stable in air with no apparent oxidation taking place, even after months of exposure to ambient untreated air. Material and surface science properties measured for {DyP}/{GaAs} include Hall measurements, 2ϑ and double-crystal X-ray diffraction spectra and photothermal deflection spectroscopy.

  2. Chemical Reaction between Boric Acid and Phosphine Indicates Boric Acid as an Antidote for Aluminium Phosphide Poisoning

    PubMed Central

    Soltani, Motahareh; Shetab-Boushehri, Seyed F.; Shetab-Boushehri, Seyed V.

    2016-01-01

    Objectives: Aluminium phosphide (AlP) is a fumigant pesticide which protects stored grains from insects and rodents. When it comes into contact with moisture, AlP releases phosphine (PH3), a highly toxic gas. No efficient antidote has been found for AlP poisoning so far and most people who are poisoned do not survive. Boric acid is a Lewis acid with an empty p orbital which accepts electrons. This study aimed to investigate the neutralisation of PH3 gas with boric acid. Methods: This study was carried out at the Baharlou Hospital, Tehran University of Medical Sciences, Tehran, Iran, between December 2013 and February 2014. The volume of released gas, rate of gas evolution and changes in pH were measured during reactions of AlP tablets with water, acidified water, saturated boric acid solution, acidified saturated boric acid solution, activated charcoal and acidified activated charcoal. Infrared spectroscopy was used to study the resulting probable adduct between PH3 and boric acid. Results: Activated charcoal significantly reduced the volume of released gas (P <0.01). Although boric acid did not significantly reduce the volume of released gas, it significantly reduced the rate of gas evolution (P <0.01). A gaseous adduct was formed in the reaction between pure AlP and boric acid. Conclusion: These findings indicate that boric acid may be an efficient and non-toxic antidote for PH3 poisoning. PMID:27606109

  3. Chemical Reaction between Boric Acid and Phosphine Indicates Boric Acid as an Antidote for Aluminium Phosphide Poisoning

    PubMed Central

    Soltani, Motahareh; Shetab-Boushehri, Seyed F.; Shetab-Boushehri, Seyed V.

    2016-01-01

    Objectives: Aluminium phosphide (AlP) is a fumigant pesticide which protects stored grains from insects and rodents. When it comes into contact with moisture, AlP releases phosphine (PH3), a highly toxic gas. No efficient antidote has been found for AlP poisoning so far and most people who are poisoned do not survive. Boric acid is a Lewis acid with an empty p orbital which accepts electrons. This study aimed to investigate the neutralisation of PH3 gas with boric acid. Methods: This study was carried out at the Baharlou Hospital, Tehran University of Medical Sciences, Tehran, Iran, between December 2013 and February 2014. The volume of released gas, rate of gas evolution and changes in pH were measured during reactions of AlP tablets with water, acidified water, saturated boric acid solution, acidified saturated boric acid solution, activated charcoal and acidified activated charcoal. Infrared spectroscopy was used to study the resulting probable adduct between PH3 and boric acid. Results: Activated charcoal significantly reduced the volume of released gas (P <0.01). Although boric acid did not significantly reduce the volume of released gas, it significantly reduced the rate of gas evolution (P <0.01). A gaseous adduct was formed in the reaction between pure AlP and boric acid. Conclusion: These findings indicate that boric acid may be an efficient and non-toxic antidote for PH3 poisoning.

  4. A review of episodes of zinc phosphide toxicosis in wild geese (Branta spp.) in Oregon (2004−2011)

    USGS Publications Warehouse

    Bildfell, Rob J.; Rumbeiha, Wilson K.; Schuler, Krysten L.; Meteyer, Carol U.; Wolff, Peregrine L.; Gillin, Colin M.

    2013-01-01

    Epizootic mortality in several geese species, including cackling geese (Branta hutchinsii) and Canada geese (Branta canadensis), has been recognized in the Willamette Valley of Oregon for over a decade. Birds are generally found dead on a body of water or are occasionally observed displaying neurologic clinical signs such as an inability to raise or control the head prior to death. Investigation of these epizootic mortality events has revealed the etiology to be accidental poisoning with the rodenticide zinc phosphide (Zn3P2). Gross and histologic changes are restricted to acute pulmonary congestion and edema, sometimes accompanied by distension of the upper alimentary tract by fresh grass. Geese are unusually susceptible to this pesticide; when combined with an epidemiologic confluence of depredation of specific agricultural crops by rodents and seasonal avian migration pathways, epizootic toxicosis may occur. Diagnosis requires a high index of suspicion, appropriate sample collection and handling, plus specific test calibration for this toxicant. Interagency cooperation, education of farmers regarding pesticide use, and enforcement of regulations has been successful in greatly decreasing these mortality events since 2009.

  5. Lattice-mismatched In(0.40)Al(0.60)As window layers for indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.; Wilt, David M.; Flood, Dennis J.

    1993-01-01

    The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar cells with wide-bandgap (1.8 eV) lattice-mismatched In(0.40)Al(0.60)As as a window layer was calculated. Because the required window layer thickness is less than the critical layer thickness, growth of strained (pseudomorphic) layers without interfacial misfit dislocations should be possible. Calculations using the PC-lD numerical code showed that the efficiencies of baseline and optimized p(+)n (p-on-n) cells are increased to more than 22 and 24 percent, (air mass zero (AMO), 25 C), respectively for a lattice-mismatched In(0.40)Al(0.60)As window layer of 10-nm thickness. Currently, most cell development work has been focused on n(+)p (n-on-p) structures although comparatively little improvement has been found for n(+)p cells.

  6. The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1992-01-01

    We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity rho(sub c) in the E-7 omega-sq cm range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in rho(sub c). Ultra-low contact resistivities in the E-8 omega-sq cm range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed rho(sub c) values in the Ni and Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface.

  7. Indium phosphide all air-gap Fabry-Pérot filters for near-infrared spectroscopic applications

    NASA Astrophysics Data System (ADS)

    Ullah, A.; Butt, M. A.; Fomchenkov, S. A.; Khonina, S. N.

    2016-08-01

    Food quality can be characterized by noninvasive techniques such as spectroscopy in the Near Infrared wavelength range. For example, 930 -1450 nm wavelength range can be used to detect diseases and differentiate between meat samples. Miniaturization of such NIR spectrometers is useful for quick and mobile characterization of food samples. Spectrometers can be miniaturized, without compromising the spectral resolution, using Fabry-Pérot (FP) filters consisting of two highly reflecting mirrors with a central cavity in between. The most commonly used mirrors in the design of FP filters are Distributed Bragg Reflections (DBRs) consisting of alternating high and low refractive index material pairs, due to their high reflectivity compared to metal mirrors. However, DBRs have high reflectivity for a selected range of wavelengths known as the stopband of the DBR. This range is usually much smaller than the sensitivity range of the spectrometer detector. Therefore, a bandpass filter is usually required to restrict wavelengths outside the stopband of the FP DBRs. Such bandpass filters are difficult to design and implement. Alternatively, high index contrast materials must be can be used to broaden the stopband width of the FP DBRs. In this work, Indium phosphide all air-gap filters are proposed in conjunction with InGaAs based detectors. The designed filter has a wide stopband covering the entire InGaAs detector sensitivity range. The filter can be tuned in the 950-1450 nm with single mode operation. The designed filter can hence be used for noninvasive meat quality control.

  8. Solar Hydrogen Production Using Molecular Catalysts Immobilized on Gallium Phosphide (111)A and (111)B Polymer-Modified Photocathodes.

    PubMed

    Beiler, Anna M; Khusnutdinova, Diana; Jacob, Samuel I; Moore, Gary F

    2016-04-20

    We report the immobilization of hydrogen-producing cobaloxime catalysts onto p-type gallium phosphide (111)A and (111)B substrates via coordination to a surface-grafted polyvinylimidazole brush. Successful grafting of the polymeric interface and subsequent assembly of cobalt-containing catalysts are confirmed using grazing angle attenuated total reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Photoelectrochemical testing in aqueous conditions at neutral pH shows that cobaloxime modification of either crystal face yields a similar enhancement of photoperformance, achieving a greater than 4-fold increase in current density and associated rates of hydrogen production as compared to results obtained using unfunctionalized electrodes tested under otherwise identical conditions. Under simulated solar illumination (100 mW cm(-2)), the catalyst-modified photocathodes achieve a current density ≈ 1 mA cm(-2) when polarized at 0 V vs the reversible hydrogen electrode reference and show near-unity Faradaic efficiency for hydrogen production as determined by gas chromatography analysis of the headspace. This work illustrates the modularity and versatility of the catalyst-polymer-semiconductor approach for directly coupling light harvesting to fuel production and the ability to export this chemistry across distinct crystal face orientations. PMID:26998554

  9. 40 CFR 35.920-1 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 1 2011-07-01 2011-07-01 false Eligibility. 35.920-1 Section 35.920-1 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE STATE AND LOCAL ASSISTANCE Grants for Construction of Treatment Works-Clean Water Act § 35.920-1 Eligibility....

  10. 40 CFR 35.920-1 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 1 2013-07-01 2013-07-01 false Eligibility. 35.920-1 Section 35.920-1 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE STATE AND LOCAL ASSISTANCE Grants for Construction of Treatment Works-Clean Water Act § 35.920-1 Eligibility....

  11. 40 CFR 35.920-1 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false Eligibility. 35.920-1 Section 35.920-1 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE STATE AND LOCAL ASSISTANCE Grants for Construction of Treatment Works-Clean Water Act § 35.920-1 Eligibility....

  12. 40 CFR 35.920-1 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 1 2012-07-01 2012-07-01 false Eligibility. 35.920-1 Section 35.920-1 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE STATE AND LOCAL ASSISTANCE Grants for Construction of Treatment Works-Clean Water Act § 35.920-1 Eligibility....

  13. 40 CFR 35.920-1 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 1 2014-07-01 2014-07-01 false Eligibility. 35.920-1 Section 35.920-1 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE STATE AND LOCAL ASSISTANCE Grants for Construction of Treatment Works-Clean Water Act § 35.920-1 Eligibility....

  14. 47 CFR 54.601 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Eligibility. 54.601 Section 54.601 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) UNIVERSAL SERVICE Universal Service Support for Health Care Providers § 54.601 Eligibility. (a) Health care providers. (1) Except with regard to those...

  15. 28 CFR 90.13 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 28 Judicial Administration 2 2011-07-01 2011-07-01 false Eligibility. 90.13 Section 90.13 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN The STOP (Services ⢠Training ⢠Officers ⢠Prosecutors) Violence Against Women Formula Grant Program § 90.13 Eligibility. (a) All...

  16. 28 CFR 90.13 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 28 Judicial Administration 2 2014-07-01 2014-07-01 false Eligibility. 90.13 Section 90.13 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN The STOP (Services ⢠Training ⢠Officers ⢠Prosecutors) Violence Against Women Formula Grant Program § 90.13 Eligibility. (a) All...

  17. 28 CFR 90.13 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 28 Judicial Administration 2 2013-07-01 2013-07-01 false Eligibility. 90.13 Section 90.13 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN The STOP (Services ⢠Training ⢠Officers ⢠Prosecutors) Violence Against Women Formula Grant Program § 90.13 Eligibility. (a) All...

  18. 28 CFR 90.13 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 28 Judicial Administration 2 2012-07-01 2012-07-01 false Eligibility. 90.13 Section 90.13 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN The STOP (Services ⢠Training ⢠Officers ⢠Prosecutors) Violence Against Women Formula Grant Program § 90.13 Eligibility. (a) All...

  19. 42 CFR 67.12 - Eligible applicants.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 1 2014-10-01 2014-10-01 false Eligible applicants. 67.12 Section 67.12 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING... Research, Evaluation, Demonstration, and Dissemination Projects § 67.12 Eligible applicants. Any public...

  20. 42 CFR 67.12 - Eligible applicants.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Eligible applicants. 67.12 Section 67.12 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING... Research, Evaluation, Demonstration, and Dissemination Projects § 67.12 Eligible applicants. Any public...

  1. 42 CFR 67.12 - Eligible applicants.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Eligible applicants. 67.12 Section 67.12 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING... Research, Evaluation, Demonstration, and Dissemination Projects § 67.12 Eligible applicants. Any public...

  2. 42 CFR 67.12 - Eligible applicants.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Eligible applicants. 67.12 Section 67.12 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING... Research, Evaluation, Demonstration, and Dissemination Projects § 67.12 Eligible applicants. Any public...

  3. 42 CFR 67.12 - Eligible applicants.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 42 Public Health 1 2011-10-01 2011-10-01 false Eligible applicants. 67.12 Section 67.12 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES FELLOWSHIPS, INTERNSHIPS, TRAINING... Research, Evaluation, Demonstration, and Dissemination Projects § 67.12 Eligible applicants. Any public...

  4. 14 CFR 61.183 - Eligibility requirements.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... Flight Instructors With a Sport Pilot Rating § 61.183 Eligibility requirements. To be eligible for a... class of aircraft for the aircraft rating sought; or (2) Flight simulator or approved flight training... accordance with a course at a training center certificated under part 142 of this chapter. (i) Accomplish...

  5. 24 CFR 232.902 - Eligible project.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 24 Housing and Urban Development 2 2013-04-01 2013-04-01 false Eligible project. 232.902 Section... FACILITIES Insurance of Mortgages Covering Existing Projects § 232.902 Eligible project. Existing projects... for insurance under this subpart. The project must not require substantial rehabilitation and...

  6. 23 CFR 810.102 - Eligible projects.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 23 Highways 1 2013-04-01 2013-04-01 false Eligible projects. 810.102 Section 810.102 Highways... SPECIAL USE HIGHWAY PROJECTS Highway Public Transportation Projects and Special Use Highway Facilities § 810.102 Eligible projects. Under this subpart the Federal Highway Administrator may approve on...

  7. 24 CFR 232.902 - Eligible project.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 24 Housing and Urban Development 2 2012-04-01 2012-04-01 false Eligible project. 232.902 Section... FACILITIES Insurance of Mortgages Covering Existing Projects § 232.902 Eligible project. Existing projects... for insurance under this subpart. The project must not require substantial rehabilitation and...

  8. 23 CFR 810.102 - Eligible projects.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 23 Highways 1 2014-04-01 2014-04-01 false Eligible projects. 810.102 Section 810.102 Highways... SPECIAL USE HIGHWAY PROJECTS Highway Public Transportation Projects and Special Use Highway Facilities § 810.102 Eligible projects. Under this subpart the Federal Highway Administrator may approve on...

  9. 23 CFR 810.102 - Eligible projects.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 23 Highways 1 2012-04-01 2012-04-01 false Eligible projects. 810.102 Section 810.102 Highways... SPECIAL USE HIGHWAY PROJECTS Highway Public Transportation Projects and Special Use Highway Facilities § 810.102 Eligible projects. Under this subpart the Federal Highway Administrator may approve on...

  10. 23 CFR 810.102 - Eligible projects.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 23 Highways 1 2011-04-01 2011-04-01 false Eligible projects. 810.102 Section 810.102 Highways... SPECIAL USE HIGHWAY PROJECTS Highway Public Transportation Projects and Special Use Highway Facilities § 810.102 Eligible projects. Under this subpart the Federal Highway Administrator may approve on...

  11. 24 CFR 232.902 - Eligible project.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 24 Housing and Urban Development 2 2011-04-01 2011-04-01 false Eligible project. 232.902 Section... FACILITIES Insurance of Mortgages Covering Existing Projects § 232.902 Eligible project. Existing projects... for insurance under this subpart. The project must not require substantial rehabilitation and...

  12. 13 CFR 120.346 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Eligibility. 120.346 Section 120.346 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans International Trade Loans § 120.346 Eligibility. (a) An applicant must establish that: (1) The loan...

  13. 47 CFR 101.501 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Eligibility. 101.501 Section 101.501 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.501 Eligibility. See § 101.147(n)...

  14. 47 CFR 101.501 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 5 2011-10-01 2011-10-01 false Eligibility. 101.501 Section 101.501 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.501 Eligibility. See § 101.147(n)...

  15. 47 CFR 27.12 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 2 2014-10-01 2014-10-01 false Eligibility. 27.12 Section 27.12 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Applications and Licenses § 27.12 Eligibility. (a) Except as provided in paragraph...

  16. 47 CFR 27.302 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 2 2013-10-01 2013-10-01 false Eligibility. 27.302 Section 27.302 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Application, Licensing, and Processing Rules for WCS § 27.302 Eligibility. (a)...

  17. 47 CFR 27.302 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 2 2012-10-01 2012-10-01 false Eligibility. 27.302 Section 27.302 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Application, Licensing, and Processing Rules for WCS § 27.302 Eligibility. (a)...

  18. 47 CFR 27.302 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Eligibility. 27.302 Section 27.302 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Application, Licensing, and Processing Rules for WCS § 27.302 Eligibility. (a)...

  19. 47 CFR 27.12 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 2 2011-10-01 2011-10-01 false Eligibility. 27.12 Section 27.12 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Applications and Licenses § 27.12 Eligibility. Except as provided in §§ 27.604,...

  20. 47 CFR 90.1303 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 5 2012-10-01 2012-10-01 false Eligibility. 90.1303 Section 90.1303 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES Wireless Broadband Services in the 3650-3700 MHz Band § 90.1303 Eligibility....

  1. 47 CFR 27.12 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 2 2013-10-01 2013-10-01 false Eligibility. 27.12 Section 27.12 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Applications and Licenses § 27.12 Eligibility. Except as provided in §§ 27.604,...

  2. 47 CFR 27.12 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 2 2012-10-01 2012-10-01 false Eligibility. 27.12 Section 27.12 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Applications and Licenses § 27.12 Eligibility. Except as provided in §§ 27.604,...

  3. 47 CFR 27.12 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Eligibility. 27.12 Section 27.12 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Applications and Licenses § 27.12 Eligibility. Except as provided in §§ 27.604,...

  4. 47 CFR 27.302 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 2 2011-10-01 2011-10-01 false Eligibility. 27.302 Section 27.302 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES MISCELLANEOUS WIRELESS COMMUNICATIONS SERVICES Application, Licensing, and Processing Rules for WCS § 27.302 Eligibility. (a)...

  5. 7 CFR 1430.504 - Eligibility.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... AGRICULTURE LOANS, PURCHASES, AND OTHER OPERATIONS DAIRY PRODUCTS Dairy Market Loss Assistance Program § 1430.504 Eligibility. (a) To be eligible to receive cash payments under this subpart, a dairy operation... quarter of 1998; (2) Indicate all milk commercially marketed by all persons in the dairy operation...

  6. 7 CFR 1430.203 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... AGRICULTURE LOANS, PURCHASES, AND OTHER OPERATIONS DAIRY PRODUCTS Milk Income Loss Contract Program § 1430.203 Eligibility. To be eligible to receive payments under this subpart, a dairy operation must: (a) Have produced... commercially marketed by all persons in the dairy operation during the contract period, to determine the...

  7. 7 CFR 1430.504 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... AGRICULTURE LOANS, PURCHASES, AND OTHER OPERATIONS DAIRY PRODUCTS Dairy Market Loss Assistance Program § 1430.504 Eligibility. (a) To be eligible to receive cash payments under this subpart, a dairy operation... quarter of 1998; (2) Indicate all milk commercially marketed by all persons in the dairy operation...

  8. 7 CFR 1430.504 - Eligibility.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... AGRICULTURE LOANS, PURCHASES, AND OTHER OPERATIONS DAIRY PRODUCTS Dairy Market Loss Assistance Program § 1430.504 Eligibility. (a) To be eligible to receive cash payments under this subpart, a dairy operation... quarter of 1998; (2) Indicate all milk commercially marketed by all persons in the dairy operation...

  9. 7 CFR 1430.504 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... AGRICULTURE LOANS, PURCHASES, AND OTHER OPERATIONS DAIRY PRODUCTS Dairy Market Loss Assistance Program § 1430.504 Eligibility. (a) To be eligible to receive cash payments under this subpart, a dairy operation... quarter of 1998; (2) Indicate all milk commercially marketed by all persons in the dairy operation...

  10. 7 CFR 1430.504 - Eligibility.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... AGRICULTURE LOANS, PURCHASES, AND OTHER OPERATIONS DAIRY PRODUCTS Dairy Market Loss Assistance Program § 1430.504 Eligibility. (a) To be eligible to receive cash payments under this subpart, a dairy operation... quarter of 1998; (2) Indicate all milk commercially marketed by all persons in the dairy operation...

  11. 7 CFR 1430.203 - Eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... AGRICULTURE LOANS, PURCHASES, AND OTHER OPERATIONS DAIRY PRODUCTS Milk Income Loss Contract Program § 1430.203 Eligibility. To be eligible to receive payments under this subpart, a dairy operation must: (a) Have produced... commercially marketed by all persons in the dairy operation during the contract period, to determine the...

  12. 25 CFR 46.10 - Eligible activities.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 25 Indians 1 2011-04-01 2011-04-01 false Eligible activities. 46.10 Section 46.10 Indians BUREAU OF INDIAN AFFAIRS, DEPARTMENT OF THE INTERIOR EDUCATION ADULT EDUCATION PROGRAM General Provisions § 46.10 Eligible activities. (a) Subject to availability of funds, funds appropriated for the BIA's Adult Education Program may be used to support...

  13. 44 CFR 204.41 - Applicant eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 44 Emergency Management and Assistance 1 2010-10-01 2010-10-01 false Applicant eligibility. 204.41 Section 204.41 Emergency Management and Assistance FEDERAL EMERGENCY MANAGEMENT AGENCY, DEPARTMENT OF HOMELAND SECURITY DISASTER ASSISTANCE FIRE MANAGEMENT ASSISTANCE GRANT PROGRAM Eligibility §...

  14. 44 CFR 360.3 - Eligible applicants.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... HOMELAND SECURITY PREPAREDNESS STATE ASSISTANCE PROGRAMS FOR TRAINING AND EDUCATION IN COMPREHENSIVE EMERGENCY MANAGEMENT § 360.3 Eligible applicants. Each of the 50 States, independent commonwealths, and territories is eligible to participate in a State Cooperative Agreement with FEMA. The department,...

  15. 28 CFR 94.21 - Eligibility.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 28 Judicial Administration 2 2014-07-01 2014-07-01 false Eligibility. 94.21 Section 94.21 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) CRIME VICTIM SERVICES International Terrorism Victim Expense Reimbursement Program Coverage § 94.21 Eligibility. (a) Except as provided in paragraphs (b) and (c) of...

  16. 7 CFR 248.6 - Recipient eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 4 2010-01-01 2010-01-01 false Recipient eligibility. 248.6 Section 248.6 Agriculture Regulations of the Department of Agriculture (Continued) FOOD AND NUTRITION SERVICE, DEPARTMENT OF AGRICULTURE CHILD NUTRITION PROGRAMS WIC FARMERS' MARKET NUTRITION PROGRAM (FMNP) Recipient Eligibility §...

  17. 12 CFR 1261.4 - Director eligibility.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 12 Banks and Banking 7 2010-01-01 2010-01-01 false Director eligibility. 1261.4 Section 1261.4 Banks and Banking FEDERAL HOUSING FINANCE AGENCY FEDERAL HOME LOAN BANKS FEDERAL HOME LOAN BANK DIRECTORS Federal Home Loan Bank Boards of Directors: Eligibility and Elections § 1261.4...

  18. 23 CFR 810.302 - Eligible projects.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION PUBLIC TRANSPORTATION MASS TRANSIT AND SPECIAL USE HIGHWAY PROJECTS Federal-Aid Urban System Nonhighway Public Mass Transit Projects § 810.302 Eligible projects. (a) Eligible projects are those defined as nonhighway public mass transit projects...

  19. 23 CFR 810.302 - Eligible projects.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION PUBLIC TRANSPORTATION MASS TRANSIT AND SPECIAL USE HIGHWAY PROJECTS Federal-Aid Urban System Nonhighway Public Mass Transit Projects § 810.302 Eligible projects. (a) Eligible projects are those defined as nonhighway public mass transit projects...

  20. 23 CFR 810.302 - Eligible projects.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION PUBLIC TRANSPORTATION MASS TRANSIT AND SPECIAL USE HIGHWAY PROJECTS Federal-Aid Urban System Nonhighway Public Mass Transit Projects § 810.302 Eligible projects. (a) Eligible projects are those defined as nonhighway public mass transit projects...