Development of HgCdTe single-element APDs based detectors for low flux short wave infrared applications

NASA Astrophysics Data System (ADS)

Foubert, K.; Lasfargues, G.; Mathieu, L.; Benahmed, S.; Vojetta, G.; Rothman, J.; Benoît à la Guillaume, Q.; Calvo, Vincent; Picot-Clemente, Jérémy; Le Mounier, Florent; Gibert, Fabien

2013-03-01

The remarkable properties (internal gain larger than 100 and close to unity excess noise factor) of Short Wave Infrared (SWIR) HgCdTe electron-initiated Avalanche Photodiodes (e-APDs) are put to good use to demanding applications, i.e. spectroscopy and LIDAR. Knowing the requirements of both situations, we have designed specific models based on highly sensitive single elements APDs and adapted proximity electronics. On one hand, we use the e-APDs low noise equivalent power (NEP) at 180K (few fW/Hz1/2). We simultaneously designed a specific Transimpedance Amplifier (TIA) which allows us to take advantage of the low APD NEP. The combination of both elements along with a dedicated cryostat enables direct LIDAR detection at moderate bandwidth (BW = 20 MHz) without the need for long time averaging, which is crucial in far field (>= 5 km) analysis. One the other hand, we have optimized a low-noise and low-frequency LN2 cooled prototype operating with an external commercial amplifier. It allows us to observe the photoluminescence of Ge nanostructures in the range 1.5-2.5 μm with a significantly increased SNR along with a reduce pump laser power. The possibility to use these detectors in the photon counting limit will be discussed in light of our recent results. In parallel, we present preliminary time response measurements performed on SWIR APD suggesting that a higher GHz BW could be reached with this type of detector. This is however subjected to optical optimization at the moment.

Recent advances in very large area avalanche photodiodes

NASA Astrophysics Data System (ADS)

Squillante, Michael R.; Christian, James; Entine, Gerald; Farrell, Richard; Karger, Arieh M.; McClish, Mickel; Myers, Richard; Shah, Kanai S.; Taylor, David; Vanderpuye, Kofi; Waer, Peter; Woodring, Mitchell

2003-09-01

The Avalanche Photodiode (APD) is a unique device that combines the advantages of solid state photodetectors with those of high gain devices such as photomultiplier tubes (PMTs). APDs have internal gain that provides a high signal-to-noise ratio. APDs have high quantum efficiency, are fast, compact, and rugged. These properties make them suitable detectors for important applications such as LADAR, detection and identification toxic chemicals and bio-warfare agents, LIDAR fluorescence detection, stand-off laser induced breakdown spectroscopy (LIBS), and nuclear detectors and imagers. Recently there have been significant technical breakthroughs in fabricating very large APDs, APD arrays, and position sensitive APD arrays (PSAPD). Signal gain of over 10,000 has been achieved, single element APDs have been fabricated with active area greater than 40 cm2, monolithic pixelated arrays with up to 28 x 28 elements have been fabricated, and position sensitive APDs have been developed and tested. Additionally, significant progress has been made in improving the fabrication process to provide better uniformity and high yield, permitting cost effective manufacturing of APDs for reduced cost.

Avalanche photodiode based time-of-flight mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogasawara, Keiichi, E-mail: kogasawara@swri.edu; Livi, Stefano A.; Desai, Mihir I.

2015-08-15

This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. Bymore » replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.« less

Geiger mode avalanche photodiodes for microarray systems

NASA Astrophysics Data System (ADS)

Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan

2002-06-01

New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.

Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

PubMed

Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

2014-11-01

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

Response of CMS avalanche photo-diodes to low energy neutrons

NASA Astrophysics Data System (ADS)

Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

2012-12-01

The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

Observation of 67 keV x-rays with a scintillation detector using proportional-mode silicon avalanche photodiode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inoue, Keisuke; Kishimoto, Shunji, E-mail: syunji.kishimoto@kek.jp; Inst. of Materials Structure Science, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801

2016-07-27

We developed a scintillation X-ray detector using a proportional-mode silicon avalanche photodiode (Si-APD). We report a prototype detector using a lead-loaded plastic scintillator mounted on a proportional-mode Si-APD (active area size: 3 mm in diameter), which is operated at a low temperature. Using 67.41 keV X-rays, we could measure pulse-height spectra of scintillation light with a charge-sensitive preamplifier at 20, 0, and −35°C. Time spectra of the X-ray bunch structure were successfully recorded using a wideband and 60-dB-gain amplifier in hybrid-mode operation of the Photon Factory ring. We obtained a better time resolution of 0.51 ns (full width at half-maximum)more » for the single-bunch X-ray peak at −35°C. We were also able to observe a linear response of the scintillation pulses up to 8 Mcps for input photon rates up to 1.4 × 10{sup 8} photons/s.« less

Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements

NASA Astrophysics Data System (ADS)

Jackson, John C.; Phelan, Don; Morrison, Alan P.; Redfern, R. Michael; Mathewson, Alan

2002-05-01

Geiger mode avalanche photodiodes (APD) can be biased above the breakdown voltage to allow detection of single photons. Because of the increase in quantum efficiency, magnetic field immunity, robustness, longer operating lifetime and reduction in costs, solid-state detectors capable of operating at non-cryogenic temperatures and providing single photon detection capabilities provide attractive alternatives to the photomultiplier tube (PMT). Shallow junction Geiger mode APD detectors provide the ability to manufacture photon detectors and detector arrays with CMOS compatible processing steps and allows the use of novel Silicon-on-Insulator(SoI) technology to provide future integrated sensing solutions. Previous work on Geiger mode APD detectors has focused on increasing the active area of the detector to make it more PMT like, easing the integration of discrete reaction, detection and signal processing into laboratory experimental systems. This discrete model for single photon detection works well for laboratory sized test and measurement equipment, however the move towards microfluidics and systems on a chip requires integrated sensing solutions. As we move towards providing integrated functionality of increasingly nanoscopic sized emissions, small area detectors and detector arrays that can be easily integrated into marketable systems, with sensitive small area single photon counting detectors will be needed. This paper will demonstrate the 2-dimensional and 3-dimensional simulation of optical coupling that occurs in Geiger mode APDs. Fabricated Geiger mode APD detectors optimized for fluorescence decay measurements were characterized and preliminary results show excellent results for their integration into fluorescence decay measurement systems.

Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

1999-01-01

Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

Silicon avalanche photodiodes developed at the Institute of Electron Technology

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Wegrzecki, Maciej; Bar, Jan; Grynglas, Maria; Uszynski, Andrzej; Grodecki, Remigiusz; Grabiec, Piotr B.; Krzeminski, Sylwester; Budzynski, Tadeusz

2004-07-01

Silicon avalanche photodiodes (APDs) -- due to the effect of avalanche multiplication of carriers in their structure -- are most sensitive and fastest detectors of visible and near infrared radiation. Also the value of noise equivalent power NEP of these detectors is the smallest. In the paper, the design, technology and properties of the silicon avalanche photodiodes with a n+ - p - π - p+ epiplanar structure developed at the Institute of Electron Technology (ITE) are presented. The diameters of photosensitive area range from 0.3 mm to 5 mm. The ITE photodiodes are optimized for the detection of the 800 nm - 850 nm radiation, but the detailed research on spectral dependencies of the gain and noise parameters has revealed that the spectral operating range of the ITE photodiodes is considerable wider and achieves 550 - 1000 nm. These photodiodes can be used in detection of very weak and very fast optical signals. Presently in the world, the studies are carried out on applying the avalanche photodiodes in detection of X radiation and in the scintillation detection of nuclear radiation.

InAlAs/InGaAs avalanche photodiode arrays for free space optical communication.

PubMed

Ferraro, Mike S; Clark, William R; Rabinovich, William S; Mahon, Rita; Murphy, James L; Goetz, Peter G; Thomas, Linda M; Burris, Harris R; Moore, Christopher I; Waters, William D; Vaccaro, Kenneth; Krejca, Brian D

2015-11-01

In free space optical communication, photodetectors serve not only as communications receivers but also as position sensitive detectors (PSDs) for pointing, tracking, and stabilization. Typically, two separate detectors are utilized to perform these tasks, but recent advances in the fabrication and development of large-area, low-noise avalanche photodiode (APD) arrays have enabled these devices to be used both as PSDs and as communications receivers. This combined functionality allows for more flexibility and simplicity in optical system design without sacrificing the sensitivity and bandwidth performance of smaller, single-element data receivers. This work presents the development of APD arrays rated for bandwidths beyond 1 GHz with measured carrier ionization ratios of approximately 0.2 at moderate APD gains. We discuss the fabrication and characterization of three types of APD arrays along with their performance as high-speed photodetectors.

Avalanche photodiode photon counting receivers for space-borne lidars

NASA Technical Reports Server (NTRS)

Sun, Xiaoli; Davidson, Frederic M.

1991-01-01

Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.

HgCdTe APDs for time-resolved space applications

NASA Astrophysics Data System (ADS)

Rothman, J.; Lasfargues, G.; Delacourt, B.; Dumas, A.; Gibert, F.; Bardoux, A.; Boutillier, M.

2017-12-01

The use of HgCdTe avalanche photodiodes (APDs) for resolving the temporal variation of faint light level signals is analyzed. The analysis is based on the performance characteristics such as the gain, the response time, and dark currents in the APDs, measured as a function of operating temperature and Cd composition, and on recently developed detector demonstrator modules. The choice of Cd composition in the APDs is strongly dependent on the application needs in terms of electrical bandwidth and signal-to-noise ratio. A performance model has been developed and used to predict the performance of the future detector modules for different applications such as high bandwidth and/or deep space free space optical telecommunications and lidar, associated with sensitivities down to single photon level at low operating temperature and close to single-photon operation at bandwidth of 10 GHz at room temperature. The predictions are corroborated by the results obtained on detector modules that have been developed and used in lidar and deep space optical communications. In a first lidar prototype, integrating a 200 µm APD, we obtained a maximum sensitivity of 25 fW/√Hz at T = 190 K operating temperature. The detector has been used for differential absorption lidar estimations of the absorption due to presence of CO2 in the atmosphere. A random error of 3-10% was obtained for the estimation of the optical thickness at a distance of 100-3000 m, for a range resolution of 100 m and using and averaging time of 4 s. The pursuit of this development is pending on the space qualification of the technology. Results from first proton and irradiation tests are reported that shows on a close to constant performance during and after the irradiation and endurance tests.

Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-08-01

×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

Development of a novel depth of interaction PET detector using highly multiplexed G-APD cross-strip encoding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolb, A., E-mail: armin.kolb@med.uni-tuebingen.de; Parl, C.; Liu, C. C.

Purpose: The aim of this study was to develop a prototype PET detector module for a combined small animal positron emission tomography and magnetic resonance imaging (PET/MRI) system. The most important factor for small animal imaging applications is the detection sensitivity of the PET camera, which can be optimized by utilizing longer scintillation crystals. At the same time, small animal PET systems must yield a high spatial resolution. The measured object is very close to the PET detector because the bore diameter of a high field animal MR scanner is limited. When used in combination with long scintillation crystals, thesemore » small-bore PET systems generate parallax errors that ultimately lead to a decreased spatial resolution. Thus, we developed a depth of interaction (DoI) encoding PET detector module that has a uniform spatial resolution across the whole field of view (FOV), high detection sensitivity, compactness, and insensitivity to magnetic fields. Methods: The approach was based on Geiger mode avalanche photodiode (G-APD) detectors with cross-strip encoding. The number of readout channels was reduced by a factor of 36 for the chosen block elements. Two 12 × 2 G-APD strip arrays (25μm cells) were placed perpendicular on each face of a 12 × 12 lutetium oxyorthosilicate crystal block with a crystal size of 1.55 × 1.55 × 20 mm. The strip arrays were multiplexed into two channels and used to calculate the x, y coordinates for each array and the deposited energy. The DoI was measured in step sizes of 1.8 mm by a collimated {sup 18}F source. The coincident resolved time (CRT) was analyzed at all DoI positions by acquiring the waveform for each event and applying a digital leading edge discriminator. Results: All 144 crystals were well resolved in the crystal flood map. The average full width half maximum (FWHM) energy resolution of the detector was 12.8% ± 1.5% with a FWHM CRT of 1.14 ± 0.02 ns. The average FWHM DoI resolution over 12 crystals was

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Gated IR imaging with 128 × 128 HgCdTe electron avalanche photodiode FPA

NASA Astrophysics Data System (ADS)

Beck, Jeff; Woodall, Milton; Scritchfield, Richard; Ohlson, Martha; Wood, Lewis; Mitra, Pradip; Robinson, Jim

2007-04-01

The next generation of IR sensor systems will include active imaging capabilities. One example of such a system is a gated-active/passive system. The gated-active/passive system promises long-range target detection and identification. A detector that is capable of both active and passive modes of operation opens up the possibility of a self-aligned system that uses a single focal plane. The detector would need to be sensitive in the 3-5 μm band for passive mode operation. In the active mode, the detector would need to be sensitive in eye-safe range, e.g. 1.55 μm, and have internal gain to achieve the required system sensitivity. The MWIR HgCdTe electron injection avalanche photodiode (e-APD) not only provides state-of-the-art 3-5 μm spectral sensitivity, but also high avalanche photodiode gain without minimal excess noise. Gains of greater than 1000 have been measured in MWIR e-APDs with a gain independent excess noise factor of 1.3. This paper reports the application of the mid-wave HgCdTe e-APD for near-IR gated-active/passive imaging. Specifically a 128x128 FPA composed of 40 μm pitch, 4.2 μm to 5 μm cutoff, APD detectors with a custom readout integrated circuit was designed, fabricated, and tested. Median gains as high as 946 at 11 V bias with noise equivalent inputs as low as 0.4 photon were measured at 80 K. A gated imaging demonstration system was designed and built using commercially available parts. High resolution gated imagery out to 9 km was obtained with this system that demonstrated predicted MTF, precision gating, and sub 10 photon sensitivity.

Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Halama, Gary E.; DeYoung, Russell J.

2000-01-01

Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

The performance of Geiger mode avalanche photo-diodes in free space laser communication links

NASA Astrophysics Data System (ADS)

Farrell, Thomas C.

2018-05-01

Geiger mode avalanche photo-diode (APD) arrays, when used as detectors in laser communication (lasercom) receivers, promise better performance at lower signal levels than APDs operated in the linear mode. In this paper, we describe the basic operation of the Geiger mode APD array as a lasercom detector, concentrating on aspects relevant to the link design engineer (rather than, for example, describing the details of the physics of the basic device operation itself). Equations are developed that describe the effects of defocus and hold-off time on the relation between the number of photons detected by the array and the output of photo-electron counts. We show how to incorporate these equations into a link budget. The resulting predictions are validated by comparison against simulation results. Finally, we compare the performance of linear mode APD based receivers and Geiger mode APD array based receivers. Results show the Geiger mode receivers yield better performance, in terms of probability of bit error, at lower signal levels, except on links where there is an exceptionally large amount of background noise. Under those conditions, not surprisingly, the hold-off time degrades performance.

Predictable quantum efficient detector based on n-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

2017-12-01

The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

Development of high-sensitivity SWIR APD receivers

NASA Astrophysics Data System (ADS)

Bai, Xiaogang; Yuan, Ping; Chang, James; Sudharsanan, Rengarajan; Krainak, Michael; Yang, Guangning; Sun, Xiaoli; Lu, Wei

2013-06-01

Emerging short wavelength infrared (SWIR) LIght Detection And Ranging (LIDAR) and long range laser rangefinder systems, require large optical aperture avalanche photodiodes (APDs) receivers with high sensitivity and high bandwidth. A large optical aperture is critical to increase the optical coupling efficiency and extend the LIDAR sensing range of the above systems. Both APD excess noise and transimpedance amplifier (TIA) noise need to be reduced in order to achieve high receiver sensitivity. The dark current and capacitance of large area APDs increase with APD aperture and thus limit the sensitivity and bandwidth of receivers. Spectrolab has been developing low excess noise InAlAs/InGaAs APDs with impact ionization engineering (I2E) designs for many years and has demonstrated APDs with optical gain over 100 utilizing multiple period I2E structures in the APD multiplier. These high gain I2E APDs have an excess noise factor less than 0.15. With an optical aperture of 200 μm, low excess noise multiple periods I2E APDs have capacitances about 1.7 pF. In addition, optical gains of InAlAs based APDs show very little temperature dependence and will enable APD photoreceivers without thermal electric cooling.

Efficient light collection from crystal scintillators using a compound parabolic concentrator coupled to an avalanche photodiode

NASA Astrophysics Data System (ADS)

Jenke, P. A.; Briggs, M. S.; Bhat, P. N.; Reardon, P.; Connaughton, V.; Wilson-Hodge, C.

2013-09-01

In support of improved gamma-ray detectors for astrophysics and observations of Terrestrial Gamma-ray Flashes (TGFs), we have designed a new approach for the collection and detection of optical photons from scintillators such as Sodium Iodide and Lanthanum Bromide using a light concentrator coupled to an Avalanche photodiode (APD). The APD has many advantages over traditional photomultiplier tubes such as their low power consumption, their compact size, their durability, and their very high quantum efficiency. The difficulty in using these devices in gamma-ray astronomy has been coupling their relatively small active area to the large scintillators necessary for gamma-ray science. Our solution is to use an acrylic Compound Parabolic Concentrator (CPC) to match the large output area of the scintillation crystal to the smaller photodiode. These non-imaging light concentrators exceed the light concentration of focused optics and are light and inexpensive to produce. We present our results from the analysis and testing of such a system including gains in light collecting efficiency, energy resolution of nuclear decay lines, as well as our design for a new, fast TGF detector.

Expected radiation damage of reverse-type APDs for the Astro-H mission

NASA Astrophysics Data System (ADS)

Kataoka, J.; Saito, T.; Yoshino, M.; Mizoma, H.; Nakamori, T.; Yatsu, Y.; Ishikawa, Y.; Matsunaga, Y.; Tajima, H.; Kokubun, M.; Edwards, P. G.

2012-06-01

Scheduled for launch in 2014, Astro-H is the sixth Japanese X-ray astronomy satellite mission. More than 60 silicon avalanche photodiodes (Si-APDs; hereafter APDs) will be used to read out BGO scintillators, which are implemented to generate a veto signal to reduce background contamination for the hard X-ray imager (HXI) and a soft gamma-ray detector (SGD). To date, however, APDs have rarely been used in space experiments. Moreover, strict environmental tests are necessary to guarantee APD performance for missions expected to extend beyond five years. The radiation hardness of APDs, as for most semiconductors, is particularly crucial, since radiation in the space environment is severe. In this paper, we present the results of radiation tests conducted on reverse-type APDs (provided by Hamamatsu Photonics) irradiated by gamma rays (60Co) and 150 MeV protons. We show that, even under the same 100 Gy dose, high energy protons can cause displacement (bulk) damage in the depletion region and possibly change the activation energy, whereas gamma-ray irradiation is less prone to cause damage, because ionization damage dominates only the surface region. We also present quantitative guidance on how to estimate APD noise deterioration over a range of temperatures and radiation doses. As a practical example, we discuss the expected degradation of the BGO energy threshold for the generation of veto signals, following several years of Astro-H operation in Low Earth Orbit (LEO), and directly compare it to experimental results obtained using a small BGO crystal.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Single Photon Counting Detectors for Low Light Level Imaging Applications

NASA Astrophysics Data System (ADS)

Kolb, Kimberly

2015-10-01

This dissertation presents the current state-of-the-art of semiconductor-based photon counting detector technologies. HgCdTe linear-mode avalanche photodiodes (LM-APDs), silicon Geiger-mode avalanche photodiodes (GM-APDs), and electron-multiplying CCDs (EMCCDs) are compared via their present and future performance in various astronomy applications. LM-APDs are studied in theory, based on work done at the University of Hawaii. EMCCDs are studied in theory and experimentally, with a device at NASA's Jet Propulsion Lab. The emphasis of the research is on GM-APD imaging arrays, developed at MIT Lincoln Laboratory and tested at the RIT Center for Detectors. The GM-APD research includes a theoretical analysis of SNR and various performance metrics, including dark count rate, afterpulsing, photon detection efficiency, and intrapixel sensitivity. The effects of radiation damage on the GM-APD were also characterized by introducing a cumulative dose of 50 krad(Si) via 60 MeV protons. Extensive development of Monte Carlo simulations and practical observation simulations was completed, including simulated astronomical imaging and adaptive optics wavefront sensing. Based on theoretical models and experimental testing, both the current state-of-the-art performance and projected future performance of each detector are compared for various applications. LM-APD performance is currently not competitive with other photon counting technologies, and are left out of the application-based comparisons. In the current state-of-the-art, EMCCDs in photon counting mode out-perform GM-APDs for long exposure scenarios, though GM-APDs are better for short exposure scenarios (fast readout) due to clock-induced-charge (CIC) in EMCCDs. In the long term, small improvements in GM-APD dark current will make them superior in both long and short exposure scenarios for extremely low flux. The efficiency of GM-APDs will likely always be less than EMCCDs, however, which is particularly disadvantageous for

Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

NASA Astrophysics Data System (ADS)

Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

2007-02-01

Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

A radiation detector fabricated from silicon photodiode.

PubMed

Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

1984-12-01

A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

NASA Technical Reports Server (NTRS)

Sun, Xiaoli; Abshire, James B.; Lauenstein, Jean-Marie; Sullivan, William III; Beck, Jeff; Hubbs, John E.

2018-01-01

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

NASA Astrophysics Data System (ADS)

Ripamonti, Giancarlo; Lacaita, Andrea L.

1993-03-01

The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

NASA Astrophysics Data System (ADS)

Jukić, Tomislav; Brandl, Paul; Zimmermann, Horst

2018-04-01

The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes

NASA Astrophysics Data System (ADS)

Ren, Min; Maddox, Scott J.; Woodson, Madison E.; Chen, Yaojia; Bank, Seth R.; Campbell, Joe C.

2016-05-01

We report AlxIn1-xAsySb1-y separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. They exhibit excess noise factor less or equal to that of Si and the low dark currents typical of III-V compound APDs.

Photon counting photodiode array detector for far ultraviolet (FUV) astronomy

NASA Technical Reports Server (NTRS)

Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

1982-01-01

A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location. Previously announced in STAR as N82-19118

Spectral dependence of the main parameters of ITE silicon avalanche photodiodes

NASA Astrophysics Data System (ADS)

Wegrzecka, Iwona; Grynglas, Maria; Wegrzecki, Maciej

2001-08-01

New applications for avalanche photodiodes (APDs) as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400 divided by 700 nm spectral range. The paper presents the method and result of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimized for the near IR radiation can be effectively applied in the detection of radiation above the 500 nm wavelength.

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

NASA Technical Reports Server (NTRS)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Short-Wave Infrared HgCdTe Electron Avalanche Photodiodes for Gated Viewing

NASA Astrophysics Data System (ADS)

Sieck, A.; Benecke, M.; Eich, D.; Oelmaier, R.; Wendler, J.; Figgemeier, H.

2018-06-01

Short-wave infrared (SWIR) HgCdTe electron avalanche photodiodes (eAPDs) with different doping profiles have been characterized for use in SWIR gated viewing systems. Gated viewing offers enhanced image contrast in scenes with clutter from the foreground or background. HgCdTe-based eAPDs show exponential gain-voltage characteristics and low excess noise and are, therefore, well suited for active imaging applications. The gain achievable at a fixed reverse voltage varies with the bandgap of the Hg1-xCdxTe detector material. We analyze current-voltage and gain-voltage plots measured on SWIR Hg1-xCdxTe eAPDs with x = 0.45, corresponding to a cutoff wavelength of 2.55 μm at 150 K. The cutoff has been chosen as a trade-off between achievable APD gain and operating temperature for SWIR gated-viewing systems with target distances of about 1000 m. Focal plane arrays with a readout-integrated circuit featuring a fast internal clock have been built and their performance with respect to gated viewing applications has been evaluated on a laboratory demonstrator for short distances. Future plans for a field demonstrator for distances up to 1000 m are described briefly at the end.

Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength

NASA Astrophysics Data System (ADS)

Tsuji, Hidenobu; Imaki, Masaharu; Kotake, Nobuki; Hirai, Akihito; Nakaji, Masaharu; Kameyama, Shumpei

2017-03-01

We demonstrate a range imaging pulsed laser sensor with two-dimensional scanning of a transmitted beam and a scanless receiver using a high-aspect avalanche photodiode (APD) array for the eye-safe wavelength. The system achieves a high frame rate and long-range imaging with a relatively simple sensor configuration. We developed a high-aspect APD array for the wavelength of 1.5 μm, a receiver integrated circuit, and a range and intensity detector. By combining these devices, we realized 160×120 pixels range imaging with a frame rate of 8 Hz at a distance of about 50 m.

A photon-counting photodiode array detector for far ultraviolet (FUV) astronomy

NASA Technical Reports Server (NTRS)

Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

1982-01-01

A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location.

Research on APD-based non-line-of-sight UV communication system

NASA Astrophysics Data System (ADS)

Wang, Rongyang; Wang, Ling; Li, Chao; Zhang, Wenjing; Yuan, Yonggang; Xu, Jintong; Zhang, Yan; Li, Xiangyang

2010-10-01

In this paper, specific issues in designing an avalanche photodiode (APD)-based non-line-of-sight (NLOS) ultraviolet (UV) communication system are investigated. A proper wavelength of the UV LEDs and a system configuration should be considered carefully to assure the feasibility of this system. Using the single scattering model, the received optical power at the sensitive area of the APD can be calculated. According to the calculation, it revealed that the scattered ultraviolet signal level was very low; therefore, a post signal processing circuit was necessary. The authors put forward the key components of the circuit based on the compromise between signal bandwidth and gain. The performance of this circuit was evaluated by means of software simulation, and continued work was involved to improve its signal noise ratio (SNR). The transmitter used in this system was 365 nm UV LED array. Strictly speaking, this was not the practical outdoor UV communication system. Since the scattering coefficient of 365 nm UV only drops a little compared with solar blind UV, the research-grade UV communication could be carried out in a darkroom without a great influence. By combining an APD with a compound parabolic concentrator (CPC) optical system, the effective collection area and field of view (FOV) of the detector could be adjusted. Several issues were also raised to improve the performance of UV communication system, including using more powerful UV LEDs and choosing suitable modulation schemes.

Fast sub-electron detectors review for interferometry

NASA Astrophysics Data System (ADS)

Feautrier, Philippe; Gach, Jean-Luc; Bério, Philippe

2016-08-01

New disruptive technologies are now emerging for detectors dedicated to interferometry. The detectors needed for this kind of applications need antonymic characteristics: the detector noise must be very low, especially when the signal is dispersed but at the same time must also sample the fast temporal characteristics of the signal. This paper describes the new fast low noise technologies that have been recently developed for interferometry and adaptive optics. The first technology is the Avalanche PhotoDiode (APD) infrared arrays made of HgCdTe. In this paper are presented the two programs that have been developed in that field: the Selex Saphira 320x256 [1] and the 320x255 RAPID detectors developed by Sofradir/CEA LETI in France [2], [3], [4]. Status of these two programs and future developments are presented. Sub-electron noise can now be achieved in the infrared using this technology. The exceptional characteristics of HgCdTe APDs are due to a nearly exclusive impaction ionization of the electrons, and this is why these devices have been called "electrons avalanche photodiodes" or e-APDs. These characteristics have inspired a large effort in developing focal plan arrays using HgCdTe APDs for low photon number applications such as active imaging in gated mode (2D) and/or with direct time of flight detection (3D imaging) and, more recently, passive imaging for infrared wave front correction and fringe tracking in astronomical observations. In addition, a commercial camera solution called C-RED, based on Selex Saphira and commercialized by First Light Imaging [5], is presented here. Some groups are also working with instruments in the visible. In that case, another disruptive technology is showing outstanding performances: the Electron Multiplying CCDs (EMCCD) developed mainly by e2v technologies in UK. The OCAM2 camera, commercialized by First Light Imaging [5], uses the 240x240 EMMCD from e2v and is successfully implemented on the VEGA instrument on the CHARA

Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

NASA Astrophysics Data System (ADS)

Bickman, S.; DeMille, D.

2005-11-01

Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28mm×28mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3pW/√Hz , can recover from a large scattered light pulse within 10μs, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08pW/√Hz , also can recover from a large scattered light pulse within 10μs, and has a bandwidth of 1 MHz.

Large-area, low-noise, high-speed, photodiode-based fluorescence detectors with fast overdrive recovery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bickman, S.; DeMille, D.

2005-11-15

Two large-area, low-noise, high-speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mmx28 mm and a low-noise transimpedance amplifier. This detector has a input light-equivalent spectral noise density of less than 3 pW/{radical}(Hz), can recover from a large scattered light pulse within 10 {mu}s, and has a bandwidth of at least 900 kHz. The second detector consists of a 16-mm-diam avalanche photodiode and a low-noise transimpedance amplifier. This detector has an input light-equivalent spectral noise density of 0.08 pW/{radical}(Hz), also can recover from a large scattered light pulse within 10 {mu}s, andmore » has a bandwidth of 1 MHz.« less

Characterization of irradiated APDs for picosecond time measurements

NASA Astrophysics Data System (ADS)

Centis Vignali, M.; Dalal, R.; Gallinaro, M.; Harrop, B.; Jain, G.; Lu, C.; McClish, M.; McDonald, K. T.; Moll, M.; Newcomer, F. M.; Ugobono, S. Otero; White, S.

2018-01-01

For their operation at the CERN High Luminosity Large Hadron Collider (HL-LHC), the ATLAS and CMS experiments are planning to implement dedicated systems to measure the time of arrival of minimum ionizing particles with an accuracy of about 30 ps. The timing detectors will be subjected to radiation levels corresponding up to a 1-MeV neutrons fluence (Φeq) of 1015 cm-2 for the goal integrated luminosity of HL-LHC of 3000 fb-1. In this paper, deep-diffused Avalanche Photo Diodes (APDs) produced by Radiation Monitoring Devices are examined as candidate timing detectors for HL-LHC applications. These APDs are operated at 1.8 kV, resulting in a gain of up to 500. The timing performance of the detectors is evaluated using a pulsed laser. The effects of radiation damage on current, signal amplitude, noise, and timing performance of the APDs are evaluated using detectors irradiated with neutrons up to Φeq = 1015 cm-2.

Smaller, Lower-Power Fast-Neutron Scintillation Detectors

NASA Technical Reports Server (NTRS)

Patel, Jagdish; Blaes, Brent

2008-01-01

Scintillation-based fast-neutron detectors that are smaller and less power-hungry than mainstream scintillation-based fast-neutron detectors are undergoing development. There are numerous applications for such detectors in monitoring fast-neutron fluxes from nuclear reactors, nuclear materials, and natural sources, both on Earth and in outer space. A particularly important terrestrial application for small, low-power, portable fast-neutron detectors lies in the requirement to scan for nuclear materials in cargo and baggage arriving at international transportation facilities. The present development of miniature, low-power scintillation-based fast-neutron detectors exploits recent advances in the fabrication of avalanche photodiodes (APDs). Basically, such a detector includes a plastic scintillator, typically between 300 and 400 m thick with very thin silver mirror coating on all its faces except the one bonded to an APD. All photons generated from scintillation are thus internally reflected and eventually directed to the APD. This design affords not only compactness but also tight optical coupling for utilization of a relatively large proportion of the scintillation light. The combination of this tight coupling and the avalanche-multiplication gain (typically between 750 and 1,000) of the APD is expected to have enough sensitivity to enable monitoring of a fast-neutron flux as small as 1,000 cm(exp -2)s(exp -1). Moreover, pulse-height analysis can be expected to provide information on the kinetic energies of incident neutrons. It has been estimated that a complete, fully developed fast-neutron detector of this type, would be characterized by linear dimensions of the order of 10 cm or less, a mass of no more than about 0.5 kg, and a power demand of no more than a few watts.

Evaluation of a LiI(Eu) neutron detector with coincident double photodiode readout

NASA Astrophysics Data System (ADS)

Yang, H.; Menaa, N.; Bronson, F.; Kastner, M.; Venkataraman, R.; Mueller, W. F.

2011-10-01

Previous work showed that enriched 6Li halide scintillation crystal is a good candidate for portable neutron-sensitive detectors. Photodiode readout is a good alternative to PMT in compact devices. These detectors are often required to work in presence of a strong gamma background. Therefore, great discrimination against gamma rays is crucial. Because of the high Q-value of the 6Li(n,α) 3H reaction, the light yield of a neutron capture signal corresponds to 3-4 MeV gamma equivalent in spite of the quenching effect of heavily charged particles. As a result, energy discrimination is quite effective against gamma signals generated in thin crystals. However, direct gamma interactions inside the photodiode can create pulses whose amplitude is large enough to interfere with thermal neutron peak. This study shows an innovative design based on coincident readout to solve this problem. In this design, two photodiodes are attached on both sides of the LiI crystal. The output signal is only accepted when both photodiodes give out coincident output. The method is proved to effectively suppress background in the neutron window in a 420 mR/h 137Cs field down to the level of natural background.

Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

PubMed

Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2017-07-10

We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

Progress in low light-level InAs detectors- towards Geiger-mode detection

NASA Astrophysics Data System (ADS)

Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey

2017-05-01

InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.

Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

PubMed Central

Farrell, Alan C.; Senanayake, Pradeep; Hung, Chung-Hong; El-Howayek, Georges; Rajagopal, Abhejit; Currie, Marc; Hayat, Majeed M.; Huffaker, Diana L.

2015-01-01

Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III–V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure. PMID:26627932

APDS: Autonomous Pathogen Detection System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Langlois, R G; Brown, S; Burris, L

An early warning system to counter bioterrorism, the Autonomous Pathogen Detection System (APDS) continuously monitors the environment for the presence of biological pathogens (e.g., anthrax) and once detected, it sounds an alarm much like a smoke detector warns of a fire. Long before September 11, 2001, this system was being developed to protect domestic venues and events including performing arts centers, mass transit systems, major sporting and entertainment events, and other high profile situations in which the public is at risk of becoming a target of bioterrorist attacks. Customizing off-the-shelf components and developing new components, a multidisciplinary team developed APDS,more » a stand-alone system for rapid, continuous monitoring of multiple airborne biological threat agents in the environment. The completely automated APDS samples the air, prepares fluid samples in-line, and performs two orthogonal tests: immunoassay and nucleic acid detection. When compared to competing technologies, APDS is unprecedented in terms of flexibility and system performance.« less

Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Comandar, L. C.; Engineering Department, Cambridge University, 9 J J Thomson Ave, Cambridge CB3 0FA; Fröhlich, B.

We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with anmore » increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns.« less

The technology on noise reduction of the APD detection circuit

NASA Astrophysics Data System (ADS)

Wu, Xue-ying; Zheng, Yong-chao; Cui, Jian-yong

2013-09-01

The laser pulse detection is widely used in the field of laser range finders, laser communications, laser radar, laser Identification Friend or Foe, et al, for the laser pulse detection has the advantage of high accuracy, high sensitivity and strong anti-interference. The avalanche photodiodes (APD) has the advantage of high quantum efficiency, high response speed and huge gain. The APD is particularly suitable for weak signal detection. The technology that APD acts as the photodetector for weak signal reception and amplification is widely used in laser pulse detection. The APD will convert the laser signal to weak electrical signal. The weak signal is amplified, processed and exported by the circuit. In the circuit design, the optimal signal detection is one key point in photoelectric detection system. The issue discusses how to reduce the noise of the photoelectric signal detection circuit and how to improve the signal-to-noise ratio, related analysis and practice included. The essay analyzes the mathematical model of the signal-to-noise ratio for photoelectric conversion and the noise of the APD photoelectric detection system. By analysis the bandwidth of the detection system is determined, and the circuit devices are selected that match the APD. In the circuit design separated devices with low noise are combined with integrated operational amplifier for the purpose of noise reduction. The methods can effectively suppress the noise, and improve the detection sensitivity.

The Road to the Common PET/CT Detector

NASA Astrophysics Data System (ADS)

Nassalski, Antoni; Moszynski, Marek; Szczesniak, Tomasz; Wolski, Dariusz; Batsch, Tadeusz

2007-10-01

Growing interest in the development of dual modality positron emission/X-rays tomography (PET/CT) systems prompts researchers to face a new challenge: to acquire both the anatomical and functional information in the same measurement, simultaneously using the same detection system and electronics. The aim of this work was to study a detector consisting of LaBr3, LSO or LYSO pixel crystals coupled to an avalanche photodiode (APD). The measurements covered tests of the detectors in PET and CT modes, respectively. The measurements included the determination of light output, energy resolution, the non-proportionality of the light yield and the time resolution for 511 keV annihilation quanta; analysis also included characterizing the PET detector, and determining the dependence of counting rate versus mean current of the APD in the X-ray detection. In the present experiment, the use of counting and current modes in the CT detection increases the dynamic range of the measured dose of X-rays by a factor of 20, compared to the counting mode alone.

Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

NASA Astrophysics Data System (ADS)

Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

2018-02-01

Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes

NASA Astrophysics Data System (ADS)

Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian

2017-11-01

Quantum key distribution (QKD) at telecom wavelengths (1260-1625nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, indium gallium arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000nm and 1600nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.

Breakdown flash at telecom wavelengths in InGaAs avalanche photodiodes.

PubMed

Shi, Yicheng; Lim, Janet Zheng Jie; Poh, Hou Shun; Tan, Peng Kian; Tan, Peiyu Amelia; Ling, Alexander; Kurtsiefer, Christian

2017-11-27

Quantum key distribution (QKD) at telecom wavelengths (1260 - 1625 nm) has the potential for fast deployment due to existing optical fibre infrastructure and mature telecom technologies. At these wavelengths, Indium Gallium Arsenide (InGaAs) avalanche photodiode (APD) based detectors are the preferred choice for photon detection. Similar to their Silicon counterparts used at shorter wavelengths, they exhibit fluorescence from recombination of electron-hole pairs generated in the avalanche breakdown process. This fluorescence may open side channels for attacks on QKD systems. Here, we characterize the breakdown fluorescence from two commercial InGaAs single photon counting modules, and find a spectral distribution between 1000 nm and 1600 nm. We also show that by spectral filtering, this side channel can be efficiently suppressed.

CMOS integrated avalanche photodiodes and frequency-mixing optical sensor front end for portable NIR spectroscopy instruments.

PubMed

Yun, Ruida; Sthalekar, Chirag; Joyner, Valencia M

2011-01-01

This paper presents the design and measurement results of two avalanche photodiode structures (APDs) and a novel frequency-mixing transimpedance amplifier (TIA), which are key building blocks towards a monolithically integrated optical sensor front end for near-infrared (NIR) spectroscopy applications. Two different APD structures are fabricated in an unmodified 0.18 \\im CMOS process, one with a shallow trench isolation (STI) guard ring and the other with a P-well guard ring. The APDs are characterized in linear mode. The STI bounded APD demonstrates better performance and exhibits 3.78 A/W responsivity at a wavelength of 690 nm and bias voltage of 10.55 V. The frequency-mixing TIA (FM-TIA) employs a T-feedback network incorporating gate-controlled transistors for resistance modulation, enabling the simultaneous down-conversion and amplification of the high frequency modulated photodiode (PD) current. The TIA achieves 92 dS Ω conversion gain with 0.5 V modulating voltage. The measured IIP(3) is 10.6/M. The amplifier together with the 50 Ω output buffer draws 23 mA from a1.8 V power supply.

Equivalent circuit model of Ge/Si separate absorption charge multiplication avalanche photodiode

NASA Astrophysics Data System (ADS)

Wang, Wei; Chen, Ting; Yan, Linshu; Bao, Xiaoyuan; Xu, Yuanyuan; Wang, Guang; Wang, Guanyu; Yuan, Jun; Li, Junfeng

2018-03-01

The equivalent circuit model of Ge/Si Separate Absorption Charge Multiplication Avalanche Photodiode (SACM-APD) is proposed. Starting from the carrier rate equations in different regions of device and considering the influences of non-uniform electric field, noise, parasitic effect and some other factors, the equivalent circuit model of SACM-APD device is established, in which the steady-state and transient current voltage characteristics can be described exactly. In addition, the proposed Ge/Si SACM APD equivalent circuit model is embedded in PSpice simulator. The important characteristics of Ge/Si SACM APD such as dark current, frequency response, shot noise are simulated, the simulation results show that the simulation with the proposed model are in good agreement with the experimental results.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, M. A.; Yang, G.; Sun, X.; Lu, W.; Merritt, S.; Beck, J.

2016-01-01

We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.

Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)

NASA Astrophysics Data System (ADS)

Bank, Seth; Maddox, Scott J.; Sun, Wenlu; Nair, Hari P.; Campbell, Joe C.

2015-08-01

InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes," Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, "High gain InAs avalanche photodiodes," in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping," Applied Physics Letters, vol. 101, no. 15, pp. 151124-151124-3, Oct. 2012.

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

NASA Technical Reports Server (NTRS)

Menkara, H. M.; Wagner, B. K.; Summers, C. J.

1995-01-01

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

NASA Technical Reports Server (NTRS)

Becker, Heidi N.; Johnston, Allan H.

2004-01-01

InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

The Autonomous Pathogen Detection System (APDS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morris, J; Dzenitis, J

2004-09-22

Shaped like a mailbox on wheels, it's been called a bioterrorism ''smoke detector.'' It can be found in transportation hubs such as airports and subways, and it may be coming to a location near you. Formally known as the Autonomous Pathogen Detection System, or APDS, this latest tool in the war on bioterrorism was developed at Lawrence Livermore National Laboratory to continuously sniff the air for airborne pathogens and toxins such as anthrax or plague. The APDS is the modern day equivalent of the canaries miners took underground with them to test for deadly carbon dioxide gas. But this canarymore » can test for numerous bacteria, viruses, and toxins simultaneously, report results every hour, and confirm positive samples and guard against false positive results by using two different tests. The fully automated system collects and prepares air samples around the clock, does the analysis, and interprets the results. It requires no servicing or human intervention for an entire week. Unlike its feathered counterpart, when an APDS unit encounters something deadly in the air, that's when it begins singing, quietly. The APDS unit transmits a silent alert and sends detailed data to public health authorities, who can order evacuation and begin treatment of anyone exposed to toxic or biological agents. It is the latest in a series of biodefense detectors developed at DOE/NNSA national laboratories. The manual predecessor to APDS, called BASIS (for Biological Aerosol Sentry and Information System), was developed jointly by Los Alamos and Lawrence Livermore national laboratories. That system was modified to become BioWatch, the Department of Homeland Security's biological urban monitoring program. A related laboratory instrument, the Handheld Advanced Nucleic Acid Analyzer (HANAA), was first tested successfully at LLNL in September 1997. Successful partnering with private industry has been a key factor in the rapid advancement and deployment of biodefense instruments such

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

NASA Astrophysics Data System (ADS)

Bayram, C.; Pau, J. L.; McClintock, R.; Razeghi, M.

2008-06-01

High quality δ-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ-doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ-doped p-GaN also achieve a maximum multiplication gain of 5.1×104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ-doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ-doping.

Silicon photodiode as a detector in the rocket-borne photometry of the near infrared airglow.

PubMed

Schaeffer, R C

1976-11-01

The application of a silicon P-I-N photodiode to the dc measurement of low levels of near ir radiation is described. It is shown that the threshold of signal detection is set by the current amplifier voltage noise, the effect of which at the output is determined by the value of source resistance of the photodiode. The photodiode was used as the detector in a compact interference filter photometer designed for rocket-borne studies of the airglow. Flight results have proved the instrument's capability to provide measurements sufficiently precise to yield an accurate height profile of the (0-0) atmospheric band of O(2) night airglow at lambda762 nm.

An excess noise measurement system for weak responsivity avalanche photodiodes

NASA Astrophysics Data System (ADS)

Qiao, Liang; Dimler, Simon J.; Baharuddin, Aina N. A. P.; Green, James E.; David, John P. R.

2018-06-01

A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure the excess noise power of devices, even when the un-multiplied photocurrent is low (~10 nA). This is more than one order of magnitude better than previously reported systems and represents a significantly better noise signal to noise ratio. This improvement in performance has been achieved by increasing the value of the feedback resistor and reducing the op-amp bandwidth. The ability to characterise APD performance with such low photocurrents enables the use of low power light sources such as light emitting diode rather than lasers to investigate the APD noise performance.

Low-Timing-Jitter Near-Infrared Single-Photon-Sensitive 16-Channel Intensified-Photodiode Detector

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Lu, Wei; Yang, Guangning; Sun, Xiaoli; Sykora, Derek; Jurkovic, Mike; Aebi, Verle; Costello, Ken; Burns, Richard

2011-01-01

We developed a 16-channel InGaAsP photocathode intensified-photodiode (IPD) detector with 78 ps (1-sigma) timing-jitter, less than 500 ps FWHM impulse response, greater than 15% quantum efficiency at 1064 nm wavelength with 131 kcps dark counts at 15 C.

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

NASA Technical Reports Server (NTRS)

Chen, C.-C.

1989-01-01

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Design and Development of 256x256 Linear Mode Low-Noise Avalanche Photodiode Arrays

NASA Technical Reports Server (NTRS)

Yuan, Ping; Sudharsanan, Rengarajan; Bai, Xiaogang; Boisvert, Joseph; McDonald, Paul; Chang, James

2011-01-01

A larger format photodiode array is always desirable for many LADAR imaging applications. However, as the array format increases, the laser power or the lens aperture has to increase to maintain the same flux per pixel thus increasing the size, weight and power of the imaging system. In order to avoid this negative impact, it is essential to improve the pixel sensitivity. The sensitivity of a short wavelength infrared linear-mode avalanche photodiode (APD) is a delicate balance of quantum efficiency, usable gain, excess noise factor, capacitance, and dark current of APD as well as the input equivalent noise of the amplifier. By using InA1As as a multiplication layer in an InP-based APD, the ionization coefficient ratio, k, is reduced from 0.40 (lnP) to 0.22, and the excess noise is reduced by about 50%. An additional improvement in excess noise of 25% was achieved by employing an impact-ionization-engineering structure with a k value of 0.15. Compared with the traditional InP structure, about 30% reduction in the noise-equivalent power with the following amplifier can be achieved. Spectrolab demonstrated 30-um mesa APD pixels with a dark current less than 10 nA and a capacitance of 60 fF at gain of 10. APD gain uninformity determines the usable gain of most pixels in an array, which is critical to focal plane array sensitivity. By fine tuning the material growth and device process, a break-down-voltage standard deviation of 0.1 V and gain of 30 on individual pixels were demonstrated in our 256x256 linear-mode APD arrays.

Optical Communications With A Geiger Mode APD Array

DTIC Science & Technology

2016-02-09

spurious fires from numerous sources, including crosstalk from other detectors in the same array . Additionally, after a 9 successful detection, the...be combined into arrays with large numbers of detectors , allowing for scaling of dynamic range with relatively little overhead on space and power...overall higher rate of dark counts than a single detector , this is more than compensated for by the extra detectors . A sufficiently large APD array could

Ultralow-noise readout circuit with an avalanche photodiode: toward a photon-number-resolving detector.

PubMed

Tsujino, Kenji; Akiba, Makoto; Sasaki, Masahide

2007-03-01

The charge-integration readout circuit was fabricated to achieve an ultralow-noise preamplifier for photoelectrons generated in an avalanche photodiode with linear mode operation at 77 K. To reduce the various kinds of noise, the capacitive transimpedance amplifier was used and consisted of low-capacitance circuit elements that were cooled with liquid nitrogen. As a result, the readout noise is equal to 3.0 electrons averaged for a period of 40 ms. We discuss the requirements for avalanche photodiodes to achieve photon-number-resolving detectors below this noise level.

Effect of Detector Dead Time on the Performance of Optical Direct-Detection Communication Links

NASA Technical Reports Server (NTRS)

Chen, C.-C.

1988-01-01

Avalanche photodiodes (APDs) operating in the Geiger mode can provide a significantly improved single-photon detect ion sensitivity over conventional photodiodes. However, the quenching circuit required to remove the excess charge carriers after each photon event can introduce an undesirable dead time into the detection process. The effect of this detector dead time on the performance of a binary pulse-position-modulted (PPM) channel is studied by analyzing the error probability. It is shown that, when back- ground noise is negligible, the performance of the detector with dead time is similar to that o f a quantum-limited receiver. For systems with increasing background intensities, the error rate of the receiver starts to degrade rapidly with increasing dead time. The power penalty due to detector dead time is also evaluated and shown to depend critically on background intensity as well as dead time. Given the expected background strength in an optical channel, therefore, a constraint must be placed on the bandwidth of the receiver to limit the amount of power penalty due to detector dead time.

Effect of detector dead time on the performance of optical direct-detection communication links

NASA Astrophysics Data System (ADS)

Chen, C.-C.

1988-05-01

Avalanche photodiodes (APDs) operating in the Geiger mode can provide a significantly improved single-photon detection sensitivity over conventional photodiodes. However, the quenching circuit required to remove the excess charge carriers after each photon event can introduce an undesirable dead time into the detection process. The effect of this detector dead time on the performance of a binary pulse-position-modulated (PPM) channel is studied by analyzing the error probability. It is shown that, when background noise is negligible, the performance of the detector with dead time is similar to that of a quantum-limited receiver. For systems with increasing background intensities, the error rate of the receiver starts to degrade rapidly with increasing dead time. The power penalty due to detector dead time is also evaluated and shown to depend critically on badkground intensity as well as dead time. Given the expected background strength in an optical channel, therefore, a constraint must be placed on the bandwidth of the receiver to limit the amount of power penalty due to detector dead time.

Automatic Channel Fault Detection on a Small Animal APD-Based Digital PET Scanner

NASA Astrophysics Data System (ADS)

Charest, Jonathan; Beaudoin, Jean-François; Cadorette, Jules; Lecomte, Roger; Brunet, Charles-Antoine; Fontaine, Réjean

2014-10-01

Avalanche photodiode (APD) based positron emission tomography (PET) scanners show enhanced imaging capabilities in terms of spatial resolution and contrast due to the one to one coupling and size of individual crystal-APD detectors. However, to ensure the maximal performance, these PET scanners require proper calibration by qualified scanner operators, which can become a cumbersome task because of the huge number of channels they are made of. An intelligent system (IS) intends to alleviate this workload by enabling a diagnosis of the observational errors of the scanner. The IS can be broken down into four hierarchical blocks: parameter extraction, channel fault detection, prioritization and diagnosis. One of the main activities of the IS consists in analyzing available channel data such as: normalization coincidence counts and single count rates, crystal identification classification data, energy histograms, APD bias and noise thresholds to establish the channel health status that will be used to detect channel faults. This paper focuses on the first two blocks of the IS: parameter extraction and channel fault detection. The purpose of the parameter extraction block is to process available data on individual channels into parameters that are subsequently used by the fault detection block to generate the channel health status. To ensure extensibility, the channel fault detection block is divided into indicators representing different aspects of PET scanner performance: sensitivity, timing, crystal identification and energy. Some experiments on a 8 cm axial length LabPET scanner located at the Sherbrooke Molecular Imaging Center demonstrated an erroneous channel fault detection rate of 10% (with a 95% confidence interval (CI) of [9, 11]) which is considered tolerable. Globally, the IS achieves a channel fault detection efficiency of 96% (CI: [95, 97]), which proves that many faults can be detected automatically. Increased fault detection efficiency would be

Reliable InP-based Geiger-mode avalanche photodiode arrays

NASA Astrophysics Data System (ADS)

Smith, Gary M.; McIntosh, K. Alex; Donnelly, Joseph P.; Funk, Joseph E.; Mahoney, Leonard J.; Verghese, Simon

2009-05-01

Arrays as large as 256 x 64 of single-photon counting avalanche photodiodes have been developed for defense applications in free-space communication and laser radar. Focal plane arrays (FPAs) sensitive to both 1.06 and 1.55 μm wavelength have been fabricated for these applications. At 240 K and 4 V overbias, the dark count rate (DCR) of 15 μm diameter devices is typically 250 Hz for 1.06 μm sensitive APDs and 1 kHz for 1.55 μm APDs. Photon detection efficiencies (PDE) at 4 V overbias are about 45% for both types of APDs. Accounting for microlens losses, the full FPA has a PDE of 30%. The reset time needed for a pixel to avoid afterpulsing at 240 K is about 3-4 μsec. These devices have been used by system groups at Lincoln Laboratory and other defense contractors for building operational systems. For these fielded systems the device reliability is a strong concern. Individual APDs as well as full arrays have been run for over 1000 hrs of accelerated testing to verify their stability. The reliability of these GM-APDs is shown to be under 10 FITs at operating temperatures of 250 K, which also corresponds to an MTTF of 17,100 yrs.

Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

NASA Astrophysics Data System (ADS)

Cao, Siyu; Zhao, Yue; ur Rehman, Sajid; Feng, Shuai; Zuo, Yuhua; Li, Chuanbo; Zhang, Lichun; Cheng, Buwen; Wang, Qiming

2018-05-01

In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer and tunneling effect on the APDs is fully understood. The design of charge layer (including doping level and thickness) can be calculated by our predictive model for different multiplication thickness. We find that as the thickness of charge layer increases, the suitable doping level range in charge layer decreases. Compared to thinner charge layer, performance of APD varies significantly via several percent deviations of doping concentrations in thicker charge layer. Moreover, the generation rate ( G btt ) of band-to-band tunnel is calculated, and the influence of tunneling effect on avalanche field was analyzed. We confirm that avalanche field and multiplication factor ( M n ) in multiplication will decrease by the tunneling effect. The theoretical model and analysis are based on InGaAs/InAlAs APD; however, they are applicable to other APD material systems as well.

III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)

NASA Astrophysics Data System (ADS)

Ghosh, Sid

2015-08-01

Laser detection and ranging (LADAR)-based systems operating in the Near Infrared (NIR) and Short Wave Infrared (SWIR) have become popular optical sensors for remote sensing, medical, and environmental applications. Sophisticated laser-based radar and weapon systems used for long-range military and astronomical applications need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. Infrared APDs play an important role in LADAR systems by integrating the detection and gain stages in a single device. Robust silicon-APDs are limited to visible and very near infrared region (< 1 um), while InGaAs works well up to wavelengths of about 1.5um. Si APDs have low multiplication or excess noise but are limited to below 1um due very poor quantum efficiency above 0.8um. InGaAs and Ge APDs operate up to wavelengths of 1.5um but have poor multiplication or excess noise due to a low impact ionization coefficient ratio between electrons and holes. For the past several decades HgCdTe has been traditionally used in longer wavelength (> 3um) infrared photon detection applications. Recently, various research groups (including Ghosh et. al.) have reported SWIR and MWIR HgCdTe APDs on CdZnTe and Si substrates. However, HgCdTe APDs suffer from low breakdown fields due to material defects, and excess noise increases significantly at high electric fields. During the past decade, InAs/GaSb Strain Layer Superlattice (SLS) material system has emerged as a potential material for the entire infrared spectrum because of relatively easier growth, comparable absorption coefficients, lower tunneling currents and longer Auger lifetimes resulting in enhanced detectivities (D*). Band engineering in type II SLS allows us to engineer avalanche properties of electrons and holes. This is a great advantage over bulk InGaAs and HgCdTe APDs where engineering avalanche properties is not possible. The talk will discuss the evolution of superlattice based avalanche

Development of novel technologies to enhance performance and reliability of III-Nitride avalanche photodiodes

NASA Astrophysics Data System (ADS)

Suvarna, Puneet Harischandra

Solar-blind ultraviolet avalanche photodiodes are an enabling technology for applications in the fields of astronomy, communication, missile warning systems, biological agent detection and particle physics research. Avalanche photodiodes (APDs) are capable of detecting low-intensity light with high quantum efficiency and signal-to-noise ratio without the need for external amplification. The properties of III-N materials (GaN and AlGaN) are promising for UV photodetectors that are highly efficient, radiation-hard and capable of visible-blind or solar-blind operation without the need for external filters. However, the realization of reliable and high performance III-N APDs and imaging arrays has several technological challenges. The high price and lack of availability of bulk III-N substrates necessitates the growth of III-Ns on lattice mismatched substrates leading to a high density of dislocations in the material that can cause high leakage currents, noise and premature breakdown in APDs. The etched sidewalls of III-N APDs and high electric fields at contact edges are also detrimental to APD performance and reliability. In this work, novel technologies have been developed and implemented that address the issues of performance and reliability in III-Nitride based APDs. To address the issue of extended defects in the bulk of the material, a novel pulsed MOCVD process was developed for the growth of AlGaN. This process enables growth of high crystal quality AlxGa1-xN with excellent control over composition, doping and thickness. The process has also been adapted for the growth of high quality III-N materials on silicon substrate for devices such as high electron mobility transistors (HEMTs). A novel post-growth defect isolation technique is also discussed that can isolate the impact of conductive defects from devices. A new sidewall passivation technique using atomic layer deposition (ALD) of dielectric materials was developed for III-N APDs that is effective in

Single photon counting linear mode avalanche photodiode technologies

NASA Astrophysics Data System (ADS)

Williams, George M.; Huntington, Andrew S.

2011-10-01

The false count rate of a single-photon-sensitive photoreceiver consisting of a high-gain, low-excess-noise linear-mode InGaAs avalanche photodiode (APD) and a high-bandwidth transimpedance amplifier (TIA) is fit to a statistical model. The peak height distribution of the APD's multiplied dark current is approximated by the weighted sum of McIntyre distributions, each characterizing dark current generated at a different location within the APD's junction. The peak height distribution approximated in this way is convolved with a Gaussian distribution representing the input-referred noise of the TIA to generate the statistical distribution of the uncorrelated sum. The cumulative distribution function (CDF) representing count probability as a function of detection threshold is computed, and the CDF model fit to empirical false count data. It is found that only k=0 McIntyre distributions fit the empirically measured CDF at high detection threshold, and that false count rate drops faster than photon count rate as detection threshold is raised. Once fit to empirical false count data, the model predicts the improvement of the false count rate to be expected from reductions in TIA noise and APD dark current. Improvement by at least three orders of magnitude is thought feasible with further manufacturing development and a capacitive-feedback TIA (CTIA).

Simultaneous data communication and position sensing with an impact ionization engineered avalanche photodiode array for free space optical communication

NASA Astrophysics Data System (ADS)

Ferraro, Mike S.; Mahon, Rita; Rabinovich, William S.; Murphy, James L.; Dexter, James L.; Clark, William R.; Waters, William D.; Vaccaro, Kenneth; Krejca, Brian D.

2017-02-01

Photodetectors in free space optical communication systems perform two functions: reception of data communication signals and position sensing for pointing, tracking, and stabilization. Traditionally, the optical receive path in an FSO system is split into separate paths for data detection and position sensing. The need for separate paths is a consequence of conflicting performance criteria between position sensitive detectors (PSD) and data detectors. Combining the functionality of both detector types requires that the combinational sensor not only have the bandwidth to support high data rate communication but the active area and spatial discrimination to accommodate position sensing. In this paper we present a large area, concentric five element impact ionization engineered avalanche photodiode array rated for bandwidths beyond 1GHz with a measured carrier ionization ratio of less than 0.1 at moderate APD gains. The integration of this array as a combinational sensor in an FSO system is discussed along with the development of a pointing and stabilization algorithm.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

PubMed

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10^-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Experimental evaluation of penetration capabilities of a Geiger-mode APD array laser radar system

NASA Astrophysics Data System (ADS)

Jonsson, Per; Tulldahl, Michael; Hedborg, Julia; Henriksson, Markus; Sjöqvist, Lars

2017-10-01

Laser radar 3D imaging has the potential to improve target recognition in many scenarios. One case that is challenging for most optical sensors is to recognize targets hidden in vegetation or behind camouflage. The range resolution of timeof- flight 3D sensors allows segmentation of obscuration and target if the surfaces are separated far enough so that they can be resolved as two distances. Systems based on time-correlated single-photon counting (TCSPC) have the potential to resolve surfaces closer to each other compared to laser radar systems based on proportional mode detection technologies and is therefore especially interesting. Photon counting detection is commonly performed with Geigermode Avalanche Photodiodes (GmAPD) that have the disadvantage that they can only detect one photon per laser pulse per pixel. A strong return from an obscuring object may saturate the detector and thus limit the possibility to detect the hidden target even if photons from the target reach the detector. The operational range where good foliage penetration is observed is therefore relatively narrow for GmAPD systems. In this paper we investigate the penetration capability through semi-transparent surfaces for a laser radar with a 128×32 pixel GmAPD array and a 1542 nm wavelength laser operating at a pulse repetition frequency of 90 kHz. In the evaluation a screen was placed behind different canvases with varying transmissions and the detected signals from the surfaces for different laser intensities were measured. The maximum return from the second surface occurs when the total detection probability is around 0.65-0.75 per pulse. At higher laser excitation power the signal from the second surface decreases. To optimize the foliage penetration capability it is thus necessary to adaptively control the laser power to keep the returned signal within this region. In addition to the experimental results, simulations to study the influence of the pulse energy on penetration through

Modeling of high-precision wavefront sensing with new generation of CMT avalanche photodiode infrared detectors.

PubMed

Gousset, Silvère; Petit, Cyril; Michau, Vincent; Fusco, Thierry; Robert, Clelia

2015-12-01

Near-infrared wavefront sensing allows for the enhancement of sky coverage with adaptive optics. The recently developed HgCdTe avalanche photodiode arrays are promising due to their very low detector noise, but still present an imperfect cosmetic that may directly impact real-time wavefront measurements for adaptive optics and thus degrade performance in astronomical applications. We propose here a model of a Shack-Hartmann wavefront measurement in the presence of residual fixed pattern noise and defective pixels. To adjust our models, a fine characterization of such an HgCdTe array, the RAPID sensor, is proposed. The impact of the cosmetic defects on the Shack-Hartmann measurement is assessed through numerical simulations. This study provides both a new insight on the applicability of cadmium mercury telluride (CMT) avalanche photodiodes detectors for astronomical applications and criteria to specify the cosmetic qualities of future arrays.

Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic-Inorganic Hybrid Structure

NASA Astrophysics Data System (ADS)

Abe, Tomoki; Uchida, Shigeto; Tanaka, Keita; Fujisawa, Takanobu; Kasada, Hirofumi; Ando, Koshi; Akaiwa, Kazuaki; Ichino, Kunio

2018-05-01

We investigated device degradation in PEDOT:PSS/ZnSSe organic-inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We observed rapid degradation with APD-mode stress (˜ 30 V) in the N2 (4 N) atmosphere, while we observed no marked change in forward bias current stress and photocurrent stress. In the case of a vacuum condition, we observed no detectable degradation in the dark avalanche current with APD-mode stress. Therefore, the degradation in the PEDOT:PSS/ZnSSe interface under the APD-mode stress was caused by the residual water vapor or oxygen in the N2 atmosphere and could be controlled by vacuum packaging.

Imaging performance of LabPET APD-based digital PET scanners for pre-clinical research

NASA Astrophysics Data System (ADS)

Bergeron, Mélanie; Cadorette, Jules; Tétrault, Marc-André; Beaudoin, Jean-François; Leroux, Jean-Daniel; Fontaine, Réjean; Lecomte, Roger

2014-02-01

The LabPET is an avalanche photodiode (APD) based digital PET scanner with quasi-individual detector read-out and highly parallel electronic architecture for high-performance in vivo molecular imaging of small animals. The scanner is based on LYSO and LGSO scintillation crystals (2×2×12/14 mm3), assembled side-by-side in phoswich pairs read out by an APD. High spatial resolution is achieved through the individual and independent read-out of an individual APD detector for recording impinging annihilation photons. The LabPET exists in three versions, LabPET4 (3.75 cm axial length), LabPET8 (7.5 cm axial length) and LabPET12 (11.4 cm axial length). This paper focuses on the systematic characterization of the three LabPET versions using two different energy window settings to implement a high-efficiency mode (250-650 keV) and a high-resolution mode (350-650 keV) in the most suitable operating conditions. Prior to measurements, a global timing alignment of the scanners and optimization of the APD operating bias have been carried out. Characteristics such as spatial resolution, absolute sensitivity, count rate performance and image quality have been thoroughly investigated following the NEMA NU 4-2008 protocol. Phantom and small animal images were acquired to assess the scanners' suitability for the most demanding imaging tasks in preclinical biomedical research. The three systems achieve the same radial FBP spatial resolution at 5 mm from the field-of-view center: 1.65/3.40 mm (FWHM/FWTM) for an energy threshold of 250 keV and 1.51/2.97 mm for an energy threshold of 350 keV. The absolute sensitivity for an energy window of 250-650 keV is 1.4%/2.6%/4.3% for LabPET4/8/12, respectively. The best count rate performance peaking at 362 kcps is achieved by the LabPET12 with an energy window of 250-650 keV and a mouse phantom (2.5 cm diameter) at an activity of 2.4 MBq ml-1. With the same phantom, the scatter fraction for all scanners is about 17% for an energy threshold of

The Vacuum Silicon Photomultiplier Tube (VSiPMT): A new version of a hybrid photon detector

NASA Astrophysics Data System (ADS)

Russo, Stefano; Barbarino, Giancarlo; de Asmundis, Riccardo; De Rosa, Gianfranca

2010-11-01

The future astroparticle experiments will study both energetic phenomena and extremely rare events from astrophysical sources. Since most of these families of experiments are carried out by using scintillation phenomena, Cherenkov or fluorescence radiation, the development of photosensitive detectors seems to be the right way to increase the experimental sensitivity. Therefore we propose an innovative design for a modern, high gain, silicon-based Vacuum Silicon Photomultiplier Tube (VSiPMT), which combines three fully established and well-understood technologies: the manufacture of hemispherical vacuum tubes with the possibility of very large active areas, the photocathode glass deposition and the novel Geiger-mode avalanche silicon photodiode (G-APD) for which a mass production is today available. This new design, based on G-APD as the electron multiplier, allows overcoming the limits of a classical PMT dynode chain.

Study on avalanche photodiode influence on heterodyne laser interferometer linearity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Budzyn, Grzegorz, E-mail: grzegorz.budzyn@pwr.wroc.pl; Podzorny, Tomasz

2016-06-28

In the paper we analyze factors reducing the possible accuracy of the heterodyne laser interferometers. The analysis is performed for the avalanche-photodiode input stages but is in main points valid also for stages with other type of photodetectors. Instrumental error originating from optical, electronic and digital signal processing factors is taken into consideration. We stress factors which are critical and those which can be neglected at certain accuracy requirements. In the work we prove that it is possible to reduce errors of the laser instrument below 1 nm point for multiaxial APD based interferometers by precise control of incident optical powermore » and the temperature of the photodiode.« less

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

DOE PAGES

Martinez, Nicholas J. D.; Derose, Christopher T.; Brock, Reinhard W.; ...

2016-08-09

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical powermore » into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.« less

Avalanche photodiode for measurement of low-energy electrons

NASA Astrophysics Data System (ADS)

Ogasawara, K.; Asamura, K.; Mukai, T.; Saito, Y.

2005-06-01

We report on the performance of an Avalanche Photodiode (APD) produced by Hamamatsu Photonics Co. Ltd. (Type Z7966-20) for measurements of low energy electrons. We have set up an electron gun, which can generate a 1-20 keV electron beam impinging onto the APD in a vacuum chamber. The result shows that the pulse height distribution (PHD) of the APD signal exhibits a significant peak for electrons with energies above 8 keV, and the variation of the PHD peak shows a good linearity with the energy of incident electrons. The energy resolution is quite good, though it slightly depends on the electron energy. In the case of low-energies (lower than 10 keV), the pulse height distribution has a characteristic tail on the low energy side, and the energy resolution becomes a little worse. The position of the peak appears on a slightly lower channel than is expected from data at higher energies (near 20 keV). Qualitatively, the low-energy tail is caused by the dead-layer on the surface of the device. The nonlinearity and the worse resolution of the peaks for higher energy electrons may have resulted from a space-charge effect due to created e-h pairs. For a quantitative understanding, we have made a Monte Carlo particle simulation of charge transport and collection inside the APD.

High-performance fused indium gallium arsenide/silicon photodiode

NASA Astrophysics Data System (ADS)

Kang, Yimin

Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated

Improved scintillation detector performance via a method of enhanced layered coatings

DOE PAGES

Wakeford, Daniel Tyler; Tornga, Shawn Robert; Adams, Jillian Cathleen; ...

2016-11-16

Increasing demand for better detection performance with a simultaneous reduction in size, weight and power consumption has motivated the use of compact semiconductors as photo-converters for many gamma-ray and neutron scintillators. The spectral response of devices such as silicon avalanche photodiodes (APDs) is poorly matched to many common high-performance scintillators. We have developed a generalized analytical method that utilizes an optical reference database to match scintillator luminescence to the excitation spectrum of high quantum efficiency semiconductor detectors. This is accomplished by the fabrication and application of a series of high quantum yield, short fluorescence lifetime, wavelengthshifting coatings. Furthermore, we showmore » here a 22% increase in photoelectron collection and a 10% improvement in energy resolution when applying a layered coating to an APD-coupled, cerium-doped, yttrium oxyorthosilicate (YSO:Ce) scintillator. Wavelength-shifted radioluminescence emission and rise time analysis are also discussed.« less

Compact and high-sensitivity 100-Gb/s (4 × 25 Gb/s) APD-ROSA with a LAN-WDM PLC demultiplexer.

PubMed

Yoshimatsu, Toshihide; Nada, Masahiro; Oguma, Manabu; Yokoyama, Haruki; Ohno, Tetsuichiro; Doi, Yoshiyuki; Ogawa, Ikuo; Takahashi, Hiroshi; Yoshida, Eiji

2012-12-10

We demonstrate an integrated 100 GbE receiver optical sub-assembly (ROSA) that incorporates a monolithic four-channel avalanche photodiode (APD) array and a planer lightwave circuit (PLC) based LAN-WDM demultiplexer. A record minimum receiver sensitivity of -20 dBm and 50-km error-free SMF transmission without an optical amplifier have been achieved.

Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems.

PubMed

Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

2018-02-01

Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems

NASA Astrophysics Data System (ADS)

Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

2018-02-01

Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

A positron emission tomograph based on LSO-APD modules with a sampling ADC read-out system for a students' advanced laboratory course.

PubMed

Schneider, Florian R; Mann, Alexander B; Konorov, Igor; Delso, Gaspar; Paul, Stephan; Ziegler, Sibylle I

2012-06-01

A one-day laboratory course on positron emission tomography (PET) for the education of physics students and PhD students in medical physics has been set up. In the course, the physical background and the principles of a PET scanner are introduced. Course attendees set the system in operation, calibrate it using a (22)Na point source and reconstruct different source geometries filled with (18)F. The PET scanner features an individual channel read-out of 96 lutetium oxyorthosilicate (LSO) scintillator crystals coupled to avalanche photodiodes (APD). The analog data of each APD are digitized by fast sampling analog to digital converters (SADC) and processed within field programmable gate arrays (FPGA) to extract amplitudes and time stamps. All SADCs are continuously sampling with a precise rate of 80MHz, which is synchronous for the whole system. The data is transmitted via USB to a Linux PC, where further processing and the image reconstruction are performed. The course attendees get an insight into detector techniques, modern read-out electronics, data acquisition and PET image reconstruction. In addition, a short introduction to some common software applications used in particle and high energy physics is part of the course. Copyright © 2011. Published by Elsevier GmbH.

Modeling of microjoule and millijoule energy LIDARs with PMT/SiPM/APD detectors: a sensitivity analysis.

PubMed

Agishev, Ravil

2018-05-10

This paper demonstrates a renewed concept and applications of the generalized methodology for atmospheric light detection and ranging (LIDAR) capability prediction as a continuation of a series of our previous works, where the dimensionless parameterization appeared as a tool for comparing systems of a different scale, design, and applications. The modernized concept applied to microscale and milliscale LIDARs with relatively new silicon photomultiplier detectors and traditional photomultiplier tube and avalanche photodiode detectors allowed prediction of the remote sensing instruments' performance and limitations. Such a generalized, uniform, and objective concept is applied for evaluation of the increasingly popular class of limited-energy LIDARs using the best optical detectors, operating on different targets (back-scatter or topographic, static or dynamic) and under intense sky background conditions. It can be used in the LIDAR community to compare different instruments and select the most suitable and effective ones for specific applications.

Geiger-mode avalanche photodiode focal plane arrays for three-dimensional imaging LADAR

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-09-01

We report on the development of focal plane arrays (FPAs) employing two-dimensional arrays of InGaAsP-based Geiger-mode avalanche photodiodes (GmAPDs). These FPAs incorporate InP/InGaAs(P) Geiger-mode avalanche photodiodes (GmAPDs) to create pixels that detect single photons at shortwave infrared wavelengths with high efficiency and low dark count rates. GmAPD arrays are hybridized to CMOS read-out integrated circuits (ROICs) that enable independent laser radar (LADAR) time-of-flight measurements for each pixel, providing three-dimensional image data at frame rates approaching 200 kHz. Microlens arrays are used to maintain high fill factor of greater than 70%. We present full-array performance maps for two different types of sensors optimized for operation at 1.06 μm and 1.55 μm, respectively. For the 1.06 μm FPAs, overall photon detection efficiency of >40% is achieved at <20 kHz dark count rates with modest cooling to ~250 K using integrated thermoelectric coolers. We also describe the first evalution of these FPAs when multi-photon pulses are incident on single pixels. The effective detection efficiency for multi-photon pulses shows excellent agreement with predictions based on Poisson statistics. We also characterize the crosstalk as a function of pulse mean photon number. Relative to the intrinsic crosstalk contribution from hot carrier luminescence that occurs during avalanche current flows resulting from single incident photons, we find a modest rise in crosstalk for multi-photon incident pulses that can be accurately explained by direct optical scattering.

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

PubMed

Pham, Thach; Du, Wei; Tran, Huong; Margetis, Joe; Tolle, John; Sun, Greg; Soref, Richard A; Naseem, Hameed A; Li, Baohua; Yu, Shui-Qing

2016-03-07

Normal-incidence Ge 1-x Sn x photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge 1-x Sn x /Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 10 9 cmHz 1/2 W -1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

Pulse oximeter using a gain-modulated avalanche photodiode operated in a pseudo lock-in light detection mode

NASA Astrophysics Data System (ADS)

Miyata, Tsuyoshi; Iwata, Tetsuo; Araki, Tsutomu

2006-01-01

We propose a reflection-type pulse oximeter, which employs two pairs of a light-emitting diode (LED) and a gated avalanche photodiode (APD). One LED is a red one with an emission wavelength λ = 635 nm and the other is a near-infrared one with that λ = 945 nm, which are both driven with a pulse mode at a frequency f (=10 kHz). Superposition of a transistor-transistor-logic (TTL) gate pulse on a direct-current (dc) bias, which is set so as not exceeding the breakdown voltage of each APD, makes the APD work in a gain-enhanced operation mode. Each APD is gated at a frequency 2f (=20 kHz) and its output signal is fed into a laboratory-made lock-in amplifier that works in synchronous with the pulse modulation signal of each LED at a frequency f (=10 kHz). A combination of the gated APD and the lock-in like signal detection scheme is useful for the reflection-type pulse oximeter thanks to the capability of detecting a weak signal against a large background (BG) light.

Current 2-μm dial measurements of atmospheric CO2 and expected results from space using new MCT APDS

NASA Astrophysics Data System (ADS)

Dumas, A.; Gibert, F.; Rothman, J.; Édouart, D.; Le Mounier, F.; Cénac, C.

2017-11-01

In the framework of CO2 monitoring in the Atmospheric Boundary Layer (ABL), a ground-based 2-μm Differential Absorption Lidar (DIAL) has been developed at the Laboratoire de Météorologie Dynamique (LMD) in Palaiseau. In order to derive flux information, this system has been set up with coherent detection, which allows to combine CO2 density measurements with wind velocity measurements. On the other hand, new advances in the field of Mercury Cadmium Tellure (MCT) Avalanche Photodiodes (APDs) open the way for high-precision measurements in direct detection ultimately from space. In this study, we first report on state of the art measurements obtained with the current coherent DIAL system before presenting expected results for a similar laser transmitter equipped with MCT APDs. For this latter part, we use a numerical model which relies on APDs performance data provided by the Laboratoire d'Électronique et de Technologie de l'Information (LETI).

Advances in HgCdTe APDs and LADAR Receivers

NASA Technical Reports Server (NTRS)

Bailey, Steven; McKeag, William; Wang, Jinxue; Jack, Michael; Amzajerdian, Farzin

2010-01-01

Raytheon is developing NIR sensor chip assemblies (SCAs) for scanning and staring 3D LADAR systems. High sensitivity is obtained by integrating high performance detectors with gain i.e. APDs with very low noise Readout Integrated Circuits. Unique aspects of these designs include: independent acquisition (non-gated) of pulse returns, multiple pulse returns with both time and intensity reported to enable full 3D reconstruction of the image. Recent breakthrough in device design has resulted in HgCdTe APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidths and have demonstrated linear mode photon counting. SCAs utilizing these high performance APDs have been integrated and demonstrated excellent spatial and range resolution enabling detailed 3D imagery both at short range and long ranges. In this presentation we will review progress in high resolution scanning, staring and ultra-high sensitivity photon counting LADAR sensors.

High bit rate germanium single photon detectors for 1310nm

NASA Astrophysics Data System (ADS)

Seamons, J. A.; Carroll, M. S.

2008-04-01

There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD

Resonant nuclear scattering of synchrotron radiation: Detector development and specular scattering from a thin layer of {sup 57}Fe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baron, A.Q.R.

1995-04-01

This thesis explores resonant nudear scattering of synchrotron radiation. An introductory chapter describes some useful concepts, such as speedup and coherent enhancement, in the context of some basic physical principles. Methods of producing highly monochromatic synchrotron beams usmg either electronic or nuclear scattering are also discussed. The body of the thesis concentrates on detector development and specular scattering from iynthetic layered materials. A detector employing n-dcrochannel plate electron multipliers is shown to have good ({approximately}50%) effidency for detecting 14.4 key x-rays incident at small ({approximately}0.5 degree) grazing angles onto Au or CsI photocathodes. However, being complicated to use, it wasmore » replaced with a large area (>=lan2) avalanche photodiode (APD) detector. The APD`s are simpler to use and have comparable (30--70%) efficiencies at 14.4 key, subnanosecond time resolution, large dynan-dc range (usable at rates up to {approximately}10{sup 8} photons/second) and low (<{approximately}0.01 cts/sec) background rates. Maxwell`s equations are used to derive the specular x-ray reflectivity of layered materials with resonant transitions and complex polarization dependencies. The effects of interfadal roughness are treated with some care, and the distorted wave Born approximation (DWBA) used to describe electronic scattering is generalized to the nuclear case. The implications of the theory are discussed in the context of grazing incidence measurements with emphasis on the kinematic and dynamical aspects of the scattering.« less

Towards a disposable in vivo miniature implantable fluorescence detector

NASA Astrophysics Data System (ADS)

Bellis, Stephen; Jackson, J. Carlton; Mathewson, Alan

2006-02-01

In the field of fluorescent microscopy, neuronal activity, diabetes and drug treatment are a few of the wide ranging biomedical applications that can be monitored with the use of dye markers. Historically, in-vivo fluorescent detectors consist of implantable probes coupled by optical fibre to sophisticated bench-top instrumentation. These systems typically use laser light to excite the fluorescent marker dies and using sensors, such as the photo-multiplier tube (PMT) or charge coupled devices (CCD), detect the fluorescent light that is filtered from the total excitation. Such systems are large and expensive. In this paper we highlight the first steps toward a fully implantable in-vivo fluorescence detection system. The aim is to make the detector system small, low cost and disposable. The current prototype is a hybrid platform consisting of a vertical cavity surface emitting laser (VCSEL) to provide the excitation and a filtered solid state Geiger mode avalanche photo-diode (APD) to detect the emitted fluorescence. Fluorescence detection requires measurement of extremely low levels of light so the proposed APD detectors combine the ability to count individual photons with the added advantage of being small in size. At present the exciter and sensor are mounted on a hybrid PCB inside a 3mm diameter glass tube.This is wired to external electronics, which provide quenching, photon counting and a PC interface. In this configuration, the set-up can be used for in-vitro experimentation and in-vivo analysis conducted on animals such as mice.

Active quench and reset integrated circuit with novel hold-off time control logic for Geiger-mode avalanche photodiodes.

PubMed

Deng, Shijie; Morrison, Alan P

2012-09-15

This Letter presents an active quench-and-reset circuit for Geiger-mode avalanche photodiodes (GM-APDs). The integrated circuit was fabricated using a conventional 0.35 μm complementary metal oxide semiconductor process. Experimental results show that the circuit is capable of linearly setting the hold-off time from several nanoseconds to microseconds with a resolution of 6.5 ns. This allows the selection of the optimal afterpulse-free hold-off time for the GM-APD via external digital inputs or additional signal processing circuitry. Moreover, this circuit resets the APD automatically following the end of the hold-off period, thus simplifying the control for the end user. Results also show that a minimum dead time of 28.4 ns is achieved, demonstrating a saturated photon-counting rate of 35.2 Mcounts/s.

X-ray spectroscopy with silicon pin and avalanche photo diodes

NASA Technical Reports Server (NTRS)

Desai, U. D.

1992-01-01

Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.

X-ray and gamma ray detector readout system

DOEpatents

Tumer, Tumay O; Clajus, Martin; Visser, Gerard

2010-10-19

A readout electronics scheme is under development for high resolution, compact PET (positron emission tomography) imagers based on LSO (lutetium ortho-oxysilicate, Lu.sub.2SiO.sub.5) scintillator and avalanche photodiode (APD) arrays. The key is to obtain sufficient timing and energy resolution at a low power level, less than about 30 mW per channel, including all required functions. To this end, a simple leading edge level crossing discriminator is used, in combination with a transimpedance preamplifier. The APD used has a gain of order 1,000, and an output noise current of several pA/ Hz, allowing bipolar technology to be used instead of CMOS, for increased speed and power efficiency. A prototype of the preamplifier and discriminator has been constructed, achieving timing resolution of 1.5 ns FWHM, 2.7 ns full width at one tenth maximum, relative to an LSO/PMT detector, and an energy resolution of 13.6% FWHM at 511 keV, while operating at a power level of 22 mW per channel. Work is in progress towards integration of this preamplifier and discriminator with appropriate coincidence logic and amplitude measurement circuits in an ASIC suitable for a high resolution compact PET instrument. The detector system and/or ASIC can also be used for many other applications for medical to industrial imaging.

Impulse response measurement in the HgCdTe avalanche photodiode

NASA Astrophysics Data System (ADS)

Singh, Anand; Pal, Ravinder

2018-04-01

HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

NASA Technical Reports Server (NTRS)

Beck, Jeffrey D.; Kinch, Mike; Sun, Xiaoli

2014-01-01

The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n- gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology.

PubMed

Padmanabhan, Preethi; Hancock, Bruce; Nikzad, Shouleh; Bell, L Douglas; Kroep, Kees; Charbon, Edoardo

2018-02-03

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e - , obtaining avalanche gains up to 10³. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaodong; Pan, Ming; Hou, Liwei

2014-01-07

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantummore » efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.« less

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

PubMed

Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

2012-05-07

This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

Ultra-violet avalanche photodiode based on AlN/GaN periodically-stacked-structure

NASA Astrophysics Data System (ADS)

Wu, Xingzhao; Zheng, Jiyuan; Wang, Lai; Brault, Julien; Matta, Samuel; Hao, Zhibiao; Sun, Changzheng; Xiong, Bing; Luo, Yi; Han, Yianjun; Wang, Jian; Li, Hongtao; Khalfioui, Mohamed A.; Li, Mo; Kang, Jianbin; Li, Qian

2018-02-01

The high-gain photomultiplier tube (PMT) is the most popular method to detect weak ultra-violet signals which attenuate quickly in atmosphere, although the vacuum tube makes it fragile and difficult to integrate. To overcome the disadvantage of PMT, an AlN/GaN periodically-stacked-structure (PSS) avalanche photodiode (APD) has been proposed, finally achieving good quality of high gain and low excessive noise. As there is a deep g valley only in the conduction band of both GaN and AlN, the electron transfers suffering less scattering and thus becomes easier to obtain the threshold of ionization impact. Because of unipolar ionization in the PSS APD, it works in linear mode. Four prototype devices of 5-period, 10-period, 15-period, and 20-period were fabricated to verify that the gain of APD increases exponentially with period number. And in 20-period device, a recorded high and stable gain of 104 was achieved under constant bias. In addition, it is proved both experimentally and theoretically, that temperature stability on gain is significantly improved in PSS APD. And it is found that the resonant enhancement in interfacial ionization may bring significant enhancement of electron ionization performance. To make further progress in PSS APD, the device structure is investigated by simulation. Both the gain and temperature stability are optimized alternatively by a proper design of periodical thickness and AlN layer occupancy.

Detection of cat-eye effect echo based on unit APD

NASA Astrophysics Data System (ADS)

Wu, Dong-Sheng; Zhang, Peng; Hu, Wen-Gang; Ying, Jia-Ju; Liu, Jie

2016-10-01

The cat-eye effect echo of optical system can be detected based on CCD, but the detection range is limited within several kilometers. In order to achieve long-range even ultra-long-range detection, it ought to select APD as detector because of the high sensitivity of APD. The detection system of cat-eye effect echo based on unit APD is designed in paper. The implementation scheme and key technology of the detection system is presented. The detection performances of the detection system including detection range, detection probability and false alarm probability are modeled. Based on the model, the performances of the detection system are analyzed using typical parameters. The results of numerical calculation show that the echo signal-to-noise ratio is greater than six, the detection probability is greater than 99.9% and the false alarm probability is less tan 0.1% within 20 km detection range. In order to verify the detection effect, we built the experimental platform of detection system according to the design scheme and carry out the field experiments. The experimental results agree well with the results of numerical calculation, which prove that the detection system based on the unit APD is feasible to realize remote detection for cat-eye effect echo.

A bench-top megavoltage fan-beam CT using CdWO4-photodiode detectors. I. System description and detector characterization.

PubMed

Rathee, S; Tu, D; Monajemi, T T; Rickey, D W; Fallone, B G

2006-04-01

We describe the components of a bench-top megavoltage computed tomography (MVCT) scanner that uses an 80-element detector array consisting of CdWO4 scintillators coupled to photodiodes. Each CdWO4 crystal is 2.75 x 8 x 10 mm3. The detailed design of the detector array, timing control, and multiplexer are presented. The detectors show a linear response to dose (dose rate was varied by changing the source to detector distance) with a correlation coefficient (R2) nearly unity with the standard deviation of signal at each dose being less than 0.25%. The attenuation of a 6 MV beam by solid water measured by this detector array indicates a small, yet significant spectral hardening that needs to be corrected before image reconstruction. The presampled modulation transfer function is strongly affected by the detector's large pitch and a large improvement can be obtained by reducing the detector pitch. The measured detective quantum efficiency at zero spatial frequency is 18.8% for 6 MV photons which will reduce the dose to the patient in MVCT applications. The detector shows a less than a 2% reduction in response for a dose of 24.5 Gy accumulated in 2 h; however, the lost response is recovered on the following day. A complete recovery can be assumed within the experimental uncertainty (standard deviation <0.5%); however, any smaller permanent damage could not be assessed.

Fast x-ray detector system with simultaneous measurement of timing and energy for a single photon

NASA Astrophysics Data System (ADS)

Masuda, T.; Okubo, S.; Hara, H.; Hiraki, T.; Kitao, S.; Miyamoto, Y.; Okai, K.; Ozaki, R.; Sasao, N.; Seto, M.; Uetake, S.; Yamaguchi, A.; Yoda, Y.; Yoshimi, A.; Yoshimura, K.

2017-06-01

We developed a fast X-ray detector system for nuclear resonant scattering (NRS) experiments. Our system employs silicon avalanche photo-diode (Si-APD) as a fast X-ray sensor. The system is able to acquire both timing and energy of a single X-ray photon simultaneously in a high rate condition, 106 counts per second for one Si-APD. The performance of the system was investigated in SPring-8, a synchrotron radiation facility in Japan. Good time resolution of 120 ps (FWHM) was achieved with a slight tail distribution in the time spectrum by a level of 10-9 at 1 ns apart from the peak. Using this system, we successfully observed the NRS from the 26.27-keV level of mercury-201, which has a half-life of 630(50) ps. We also demonstrated the reduction of background events caused by radioactive decays in a radioactive sample by discriminating photon energy.

Fast x-ray detector system with simultaneous measurement of timing and energy for a single photon.

PubMed

Masuda, T; Okubo, S; Hara, H; Hiraki, T; Kitao, S; Miyamoto, Y; Okai, K; Ozaki, R; Sasao, N; Seto, M; Uetake, S; Yamaguchi, A; Yoda, Y; Yoshimi, A; Yoshimura, K

2017-06-01

We developed a fast X-ray detector system for nuclear resonant scattering (NRS) experiments. Our system employs silicon avalanche photo-diode (Si-APD) as a fast X-ray sensor. The system is able to acquire both timing and energy of a single X-ray photon simultaneously in a high rate condition, 10 6 counts per second for one Si-APD. The performance of the system was investigated in SPring-8, a synchrotron radiation facility in Japan. Good time resolution of 120 ps (FWHM) was achieved with a slight tail distribution in the time spectrum by a level of 10 -9 at 1 ns apart from the peak. Using this system, we successfully observed the NRS from the 26.27-keV level of mercury-201, which has a half-life of 630(50) ps. We also demonstrated the reduction of background events caused by radioactive decays in a radioactive sample by discriminating photon energy.

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology †

PubMed Central

Hancock, Bruce; Nikzad, Shouleh; Bell, L. Douglas; Kroep, Kees; Charbon, Edoardo

2018-01-01

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 × 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 µm high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to ≈80 V with verified measurement results. The readout offers a conversion gain of 0.43 µV/e−, obtaining avalanche gains up to 103. Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology. PMID:29401655

Photodiode Preamplifier for Laser Ranging With Weak Signals

NASA Technical Reports Server (NTRS)

Abramovici, Alexander; Chapsky, Jacob

2007-01-01

An improved preamplifier circuit has been designed for processing the output of an avalanche photodiode (APD) that is used in a high-resolution laser ranging system to detect laser pulses returning from a target. The improved circuit stands in contrast to prior such circuits in which the APD output current pulses are made to pass, variously, through wide-band or narrow-band load networks before preamplification. A major disadvantage of the prior wide-band load networks is that they are highly susceptible to noise, which degrades timing resolution. A major disadvantage of the prior narrow-band load networks is that they make it difficult to sample the amplitudes of the narrow laser pulses ordinarily used in ranging. In the improved circuit, a load resistor is connected to the APD output and its value is chosen so that the time constant defined by this resistance and the APD capacitance is large, relative to the duration of a laser pulse. The APD capacitance becomes initially charged by the pulse of current generated by a return laser pulse, so that the rise time of the load-network output is comparable to the duration of the return pulse. Thus, the load-network output is characterized by a fast-rising leading edge, which is necessary for accurate pulse timing. On the other hand, the resistance-capacitance combination constitutes a lowpass filter, which helps to suppress noise. The long time constant causes the load network output pulse to have a long shallow-sloping trailing edge, which makes it easy to sample the amplitude of the return pulse. The output of the load network is fed to a low-noise, wide-band amplifier. The amplifier must be a wide-band one in order to preserve the sharp pulse rise for timing. The suppression of noise and the use of a low-noise amplifier enable the ranging system to detect relatively weak return pulses.

Optimization and application of cooled avalanche photodiodes for spectroscopic fluctuation measurements with ultra-fast charge exchange recombination spectroscopy

DOE PAGES

Truong, D. D.; Fonck, R. J.; McKee, G. R.

2016-09-23

The Ultra Fast Charge Exchange Recombination Spectroscopy (UF-CHERS) diagnostic is a highly specialized spectroscopic instrument with 2 spatial channels consisting of 8 spectral channels each and a resolution of ~0.25 nm deployed at DIII-D to measure turbulent ion temperature fluctuations. Charge exchange emissions are obtained between 528-530 nm with 1 μs time resolution to study plasma instabilities. A primary challenge of extracting fluctuation measurements from raw UF-CHERS signals is photon and electronic noise. In order to reduce dark current, the Avalanche Photodiode (APD) detectors are thermoelectrically cooled. State-of-the-art components are used for the signal amplifiers and conditioners to minimize electronicmore » noise. Due to the low incident photon power (≤ 1 nW), APDs with a gain of up to 300 are used to optimize the signal to noise ratio. Maximizing the APDs’ gain while minimizing the excess noise factor (ENF) is essential since the total noise of the diagnostic sets a floor for the minimum level of detectable broadband fluctuations. The APDs’ gain should be high enough that photon noise dominates electronic noise, but not excessive so that the ENF overwhelms plasma fluctuations. A new generation of cooled APDs and optimized preamplifiers exhibits significantly enhanced signal-to-noise compared to a previous generation. Experiments at DIII-D have allowed for characterization and optimization of the ENF vs. gain. Here, a gain of ~100 at 1700 V is found to be near optimal for most plasma conditions. Ion temperature and toroidal velocity fluctuations due to the Edge Harmonic Oscillation (EHO) in Quiescent H-mode (QH) plasmas are presented to demonstrate UF-CHERS’ capabilities.« less

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes. Degree awarded Oct. 1997

NASA Technical Reports Server (NTRS)

Hunt, W. D.; Brennan, K. F.; Summers, C. J.; Yun, Ilgu

1994-01-01

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

NASA Astrophysics Data System (ADS)

Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

2017-09-01

Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

Large dynamic range radiation detector and methods thereof

DOEpatents

Marrs, Roscoe E [Livermore, CA; Madden, Norman W [Sparks, NV

2012-02-14

According to one embodiment, a radiation detector comprises a scintillator and a photodiode optically coupled to the scintillator. The radiation detector also includes a bias voltage source electrically coupled to the photodiode, a first detector operatively electrically coupled to the photodiode for generating a signal indicative of a level of a charge at an output of the photodiode, and a second detector operatively electrically coupled to the bias voltage source for generating a signal indicative of an amount of current flowing through the photodiode.

HIGH-SPEED IMAGING AND WAVEFRONT SENSING WITH AN INFRARED AVALANCHE PHOTODIODE ARRAY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baranec, Christoph; Atkinson, Dani; Hall, Donald

2015-08-10

Infrared avalanche photodiode (APD) arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed, and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an early engineering-grade infrared APD array that achieves a correlated double sampling read noise of 0.73 e{sup −} in the lab, and a total noise of 2.52 e{sup −} on sky, and supports simultaneous high-speed imaging and tip-tilt wavefront sensing with the Robo-AO visible-light laser adaptive optics (AO) system at the Palomar Observatory 1.5 m telescope. Here we report on the improved image quality simultaneously achieved at visible andmore » infrared wavelengths by using the array as part of an image stabilization control loop with AO-sharpened guide stars. We also discuss a newly enabled survey of nearby late M-dwarf multiplicity, as well as future uses of this technology in other AO and high-contrast imaging applications.« less

The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

NASA Technical Reports Server (NTRS)

Cochran, A. L.

1984-01-01

The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akiba, M., E-mail: akiba@nict.go.jp; Tsujino, K.

This paper offers a theoretical explanation of the temperature and temporal dependencies of transient dark count rates (DCRs) measured for a linear-mode silicon avalanche photodiode (APD) and the dependencies of afterpulsing that were measured in Geiger-mode Si and InGaAs/InP APDs. The temporal dependencies exhibit power-law behavior, at least to some extent. For the transient DCR, the value of the DCR for a given time period increases with decreases in temperature, while the power-law behavior remains unchanged. The transient DCR is attributed to electron emissions from traps in the multiplication layer of the APD with a high electric field, and itsmore » temporal dependence is explained by a continuous change in the electron emission rate as a function of the electric field strength. The electron emission rate is calculated using a quantum model for phonon-assisted tunnel emission. We applied the theory to the temporal dependence of afterpulsing that was measured for Si and InGaAs/InP APDs. The power-law temporal dependence is attributed to the power-law function of the electron emission rate from the traps as a function of their position across the p–n junction of the APD. Deviations from the power-law temporal dependence can be derived from the upper and lower limits of the electric field strength.« less

Performance measurement results for a 220 Mbps QPPM optical communication receiver with an EG/G Slik APD

NASA Technical Reports Server (NTRS)

Davidson, Frederic M.; Sun, Xiaoli

1992-01-01

The performance of a 220 Mbps quaternary pulse position modulation (QPPM) optical communication receiver with a 'Slik' silicon avalanche photodiode (APD) and a wideband transimpedance preamplifier in a small hybrid circuit module was measured. The receiver performance had been poor due to the lack of a wideband and low noise transimpedance preamplifier. With the new APB preamplifier module, the receiver achieved a bit error rate (BER) of 10 exp -6 at an average received input optical signal power of 4.2 nW, which corresponds to an average of 80 received (incident) signal photons per information bit.

MCT (HgCdTe) IR detectors: latest developments in France

NASA Astrophysics Data System (ADS)

Reibel, Yann; Rubaldo, Laurent; Vaz, Cedric; Tribolet, Philippe; Baier, Nicolas; Destefanis, Gérard

2010-10-01

This paper presents an overview of the very recent developments of the MCT infrared detector technology developed by CEA-LETI and Sofradir in France. New applications require high sensitivity, higher operating temperature and dual band detectors. The standard n on p technology in production at Sofradir for 25 years is well mastered with an extremely robust and reliable process. Sofradir's interest in p on n technology opens the perspective of reducing dark current of diodes so detectors could operate in lower flux or higher operating temperature. In parallel, MCT Avalanche Photo Diodes (APD) have demonstrated ideal performances for low flux and high speed application like laser gated imaging during the last few years. This technology also opens new prospects on next generation of imaging detectors for compact, low flux and low power applications. Regarding 3rd Gen IR detectors, the development of dual-band infrared detectors has been the core of intense research and technological improvements for the last ten years. New TV (640 x 512 pixels) format MWIR/LWIR detectors on 20μm pixel pitch, made from Molecular Beam Epitaxy, has been developed with dedicated Read-Out Integrated Circuit (ROIC) for real simultaneous detection and maximum SNR. Technological and products achievements, as well as latest results and performances are presented outlining the availability of p/n, avalanche photodiodes and dual band technologies for new applications at system level.

SAPHIRA detector for infrared wavefront sensing

NASA Astrophysics Data System (ADS)

Finger, Gert; Baker, Ian; Alvarez, Domingo; Ives, Derek; Mehrgan, Leander; Meyer, Manfred; Stegmeier, Jörg; Weller, Harald J.

2014-08-01

The only way to overcome the CMOS noise barrier of near infrared sensors used for wavefront sensing and fringe tracking is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. In 2007 ESO started a program at Selex to develop near infrared electron avalanche photodiode arrays (eAPD) for wavefront sensing and fringe tracking. In a first step the cutoff wavelength was reduced from 4.5 micron to 2.5 micron in order to verify that the dark current scales with the bandgap and can be reduced to less than one electron/ms, the value required for wavefront sensing. The growth technology was liquid phase epitaxy (LPE) with annular diodes based on the loophole interconnect technology. The arrays required deep cooling to 40K to achieve acceptable cosmetic performance at high APD gain. The second step was to develop a multiplexer tailored to the specific application of the GRAVITY instrument wavefront sensors and the fringe tracker. The pixel format is 320x256 pixels. The array has 32 parallel video outputs which are arranged in such a way that the full multiplex advantage is available also for small subwindows. Nondestructive readout schemes with subpixel sampling are possible. This reduces the readout noise at high APD gain well below the subelectron level at frame rates of 1 KHz. The third step was the change of the growth technology from liquid phase epitaxy to metal organic vapour phase epitaxy (MOVPE). This growth technology allows the band structure and doping to be controlled on a 0.1μm scale and provides more flexibility for the design of diode structures. The bandgap can be varied for different layers of Hg(1-x)CdxTe. It is possible to make heterojunctions and apply solid state engineering techniques. The change to MOVPE resulted in a dramatic improvement in the cosmetic quality with 99.97 % operable pixels at an operating temperature of 85K. Currently this sensor is deployed in the 4 wavefront sensors and in the

Application of dot-matrix illumination of liquid crystal phase space light modulator in 3D imaging of APD array

NASA Astrophysics Data System (ADS)

Wang, Shuai; Sun, Huayan; Guo, Huichao

2018-01-01

Aiming at the problem of beam scanning in low-resolution APD array in three-dimensional imaging, a method of beam scanning with liquid crystal phase-space optical modulator is proposed to realize high-resolution imaging by low-resolution APD array. First, a liquid crystal phase spatial light modulator is used to generate a beam array and then a beam array is scanned. Since the sub-beam divergence angle in the beam array is smaller than the field angle of a single pixel in the APD array, the APD's pixels respond only to the three-dimensional information of the beam illumination position. Through the scanning of the beam array, a single pixel is used to collect the target three-dimensional information multiple times, thereby improving the resolution of the APD detector. Finally, MATLAB is used to simulate the algorithm in this paper by using two-dimensional scalar diffraction theory, which realizes the splitting and scanning with a resolution of 5 x 5. The feasibility is verified theoretically.

X-ray spectrometer with a low-cost SiC photodiode

NASA Astrophysics Data System (ADS)

Zhao, S.; Lioliou, G.; Barnett, A. M.

2018-04-01

A low-cost Commercial-Off-The-Shelf (COTS) 4H-SiC 0.06 mm2 UV p-n photodiode was coupled to a low-noise charge-sensitive preamplifier and used as photon counting X-ray spectrometer. The photodiode/spectrometer was investigated at X-ray energies from 4.95 keV to 21.17 keV: a Mo cathode X-ray tube was used to fluoresce eight high-purity metal foils to produce characteristic X-ray emission lines which were used to characterise the instrument. The energy resolution (full width at half maximum, FWHM) of the spectrometer was found to be 1.6 keV to 1.8 keV, across the energy range. The energy linearity of the detector/spectrometer (i.e. the detector's charge output per photon as a function of incident photon energy across the 4.95 keV to 21.17 keV energy range), as well as the count rate linearity of the detector/spectrometer (i.e. number of detected photons as a function of photon fluence at a specific energy) were investigated. The energy linearity of the detector/spectrometer was linear with an error < ± 0.7 %; the count rate linearity of the detector/spectrometer was linear with an error < ± 2 %. The use of COTS SiC photodiodes as detectors for X-ray spectrometers is attractive for nanosatellite/CubeSat applications (including solar flare monitoring), and for cost sensitive industrial uses.

Silicon avalanche photodiode detector circuit for Nd:YAG laser scattering

NASA Astrophysics Data System (ADS)

Hsieh, C. L.; Haskovec, J.; Carlstrom, T. N.; DeBoo, J. C.; Greenfield, C. M.; Snider, R. T.; Trost, P.

1990-10-01

A silicon avalanche photodiode with an internal gain of about 50 to 100 is used in a temperature-controlled environment to measure the Nd:YAG laser Thomson scattered spectrum in the wavelength range from 700 to 1150 nm. A charge-sensitive preamplifier has been developed for minimizing the noise contribution from the detector electronics. Signal levels as low as 20 photoelectrons (S/N=1) can be detected. Measurements show that both the signal and the variance of the signal vary linearly with the input light level over the range of interest, indicating Poisson statistics. The signal is processed using a 100 ns delay line and a differential amplifier which subtracts the low-frequency background light component. The background signal is amplified with a computer-controlled variable gain amplifier and is used for an estimate of the measurement error, calibration, and Zeff measurements of the plasma. The signal processing has been analyzed using a theoretical model to aid the system design and establish the procedure for data error analysis.

Analysis and modeling of optical crosstalk in InP-based Geiger-mode avalanche photodiode FPAs

NASA Astrophysics Data System (ADS)

Chau, Quan; Jiang, Xudong; Itzler, Mark A.; Entwistle, Mark; Piccione, Brian; Owens, Mark; Slomkowski, Krystyna

2015-05-01

Optical crosstalk is a major factor limiting the performance of Geiger-mode avalanche photodiode (GmAPD) focal plane arrays (FPAs). This is especially true for arrays with increased pixel density and broader spectral operation. We have performed extensive experimental and theoretical investigations on the crosstalk effects in InP-based GmAPD FPAs for both 1.06-μm and 1.55-μm applications. Mechanisms responsible for intrinsic dark counts are Poisson processes, and their inter-arrival time distribution is an exponential function. In FPAs, intrinsic dark counts and cross talk events coexist, and the inter-arrival time distribution deviates from purely exponential behavior. From both experimental data and computer simulations, we show the dependence of this deviation on the crosstalk probability. The spatial characteristics of crosstalk are also demonstrated. From the temporal and spatial distribution of crosstalk, an efficient algorithm to identify and quantify crosstalk is introduced.

Sub-electron read noise and millisecond full-frame readout with the near infrared eAPD array SAPHIRA

NASA Astrophysics Data System (ADS)

Finger, Gert; Baker, Ian; Alvarez, Domingo; Dupuy, Christophe; Ives, Derek; Meyer, Manfred; Mehrgan, Leander; Stegmeier, Jörg; Weller, Harald J.

2016-07-01

In 2007 ESO started a program at SELEX (now LEONARDO) to develop noiseless near infrared HgCdTe electron avalanche photodiode arrays (eAPD)[1][2][3]. This eAPD technology is only way to overcome the limiting CMOS noise barrier of near infrared sensors used for wavefront sensing and fringe tracking. After several development cycles of solid state engineering techniques which can be easily applied to the chosen growth technology of metal organic vapour phase epitaxy (MOVPE), the eAPD arrays have matured and resulted in the SAPHIRA arrays. They have a format of 320x256 pixels with a pitch of 24 μm. They now offer an unmatched combination of sub-electron read noise at millisecond frame readout rates. The first generation of SAPHIRA arrays were only sensitive in H and K-band. With the removal of a wide bandgap buffer layer the arrays are now sensitive from λ=0.8 μm to 2.5 μm with high quantum efficiency over the entire wavelength range. The high temperature anneal applied during the growth process produces material with superb cosmetic quality at an APD gain of over 600. The design of the SAPHIRA ROIC has also been revised and the new ME1000 ROIC has an optimized analogue chain and more flexible readout modes. The clock for the vertical shift register is now under external control. The advantage of this is that correlated-double-sampling and uncorrelated readout in the rolling shutter mode now have a duty cycle of 100% at the maximum frame rate. Furthermore, to reduce the readout noise rows can be read several times before and after row reset. Since the APD gain is sufficiently high that one photon produces many more electrons than the square root of kTC which is the charge uncertainty after reset, signals of one photon per exposure can be easily detected without the need for double correlated sampling. First results obtained with the fringe tracker in GRAVITY and the four SAPHIRA wavefront sensors installed in the CIAO adaptive optics systems of the four 8 meter

InP-based Geiger-mode avalanche photodiode arrays for three-dimensional imaging at 1.06 μm

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Jiang, Xudong; Patel, Ketan; Slomkowski, Krystyna; Koch, Tim; Rangwala, Sabbir; Zalud, Peter F.; Yu, Young; Tower, John; Ferraro, Joseph

2009-05-01

We report on the development of 32 x 32 focal plane arrays (FPAs) based on InGaAsP/InP Geiger-mode avalanche photodiodes (GmAPDs) designed for use in three-dimensional (3-D) laser radar imaging systems at 1064 nm. To our knowledge, this is the first realization of FPAs for 3-D imaging that employ a planar-passivated buried-junction InP-based GmAPD device platform. This development also included the design and fabrication of custom readout integrate circuits (ROICs) to perform avalanche detection and time-of-flight measurements on a per-pixel basis. We demonstrate photodiode arrays (PDAs) with a very narrow breakdown voltage distribution width of 0.34 V, corresponding to a breakdown voltage total variation of less than +/- 0.2%. At an excess bias voltage of 3.3 V, which provides 40% pixel-level single photon detection efficiency, we achieve average dark count rates of 2 kHz at an operating temperature of 248 K. We present the characterization of optical crosstalk induced by hot carrier luminescence during avalanche events, where we show that the worst-case crosstalk probability per pixel, which occurs for nearest neighbors, has a value of less than 1.6% and exhibits anisotropy due to isolation trench etch geometry. To demonstrate the FPA response to optical density variations, we show a simple image of a broadened optical beam.

Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling

NASA Technical Reports Server (NTRS)

Xiao, Yegao; Bhat, Ishwara; Abedin, M. Nurul

2005-01-01

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

DOEpatents

Skogen, Erik J.

2016-10-25

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

NASA Technical Reports Server (NTRS)

1972-01-01

High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

Radiation detection measurements with a new ``Buried Junction'' silicon avalanche photodiode

NASA Astrophysics Data System (ADS)

Lecomte, R.; Pepin, C.; Rouleau, D.; Dautet, H.; McIntyre, R. J.; McSween, D.; Webb, P.

1999-02-01

An improved version of a recently developed "Buried Junction" avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the "Reverse APD", is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of energy and timing resolution of this device with several scintillators (BGO, LSO and GSO) of potential interest in high-energy physics and PET imaging systems are presented.

Vertical Isolation for Photodiodes in CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2008-01-01

In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

Single photon detection using Geiger mode CMOS avalanche photodiodes

NASA Astrophysics Data System (ADS)

Lawrence, William G.; Stapels, Christopher; Augustine, Frank L.; Christian, James F.

2005-10-01

Geiger mode Avalanche Photodiodes fabricated using complementary metal-oxide-semiconductor (CMOS) fabrication technology combine high sensitivity detectors with pixel-level auxiliary circuitry. Radiation Monitoring Devices has successfully implemented CMOS manufacturing techniques to develop prototype detectors with active diameters ranging from 5 to 60 microns and measured detection efficiencies of up to 60%. CMOS active quenching circuits are included in the pixel layout. The actively quenched pixels have a quenching time less than 30 ns and a maximum count rate greater than 10 MHz. The actively quenched Geiger mode avalanche photodiode (GPD) has linear response at room temperature over six orders of magnitude. When operating in Geiger mode, these GPDs act as single photon-counting detectors that produce a digital output pulse for each photon with no associated read noise. Thermoelectrically cooled detectors have less than 1 Hz dark counts. The detection efficiency, dark count rate, and after-pulsing of two different pixel designs are measured and demonstrate the differences in the device operation. Additional applications for these devices include nuclear imaging and replacement of photomultiplier tubes in dosimeters.

Performance of a junction termination extension avalanche photodiode for use with scintillators

NASA Astrophysics Data System (ADS)

Gramsch, E.; Pcheliakov, O.; Chistokhin, Igor B.

2008-11-01

An avalanche photodiode with a ring structure called junction termination extension (JTE) was built and tested. It has three diffused rings around the main junction to avoid early breakdown at the surface. The ITE rings have less doping than the main junction and can be built by well controlled single ion-implantation through a single mask. Avalanche photodiodes with two mm diameter active area have been have been built by implantation of boron with a dose of 2, 3, 4 and 5 × 1012 cm-2, followed by deep diffusion of the junction up to 14 μm. The dark current is strongly dependent on the implantation dose, decreasing with decreasing charge. For the APDs with implanted dose of 5 × 1012 cm-2 a gain of 8 is obtained at 1120 V. The energy resolution from a 137Cs source was measured to be 24.4% FWHM with a 2 × 2 × 2 mm3 BGO scintillator. We have also performed simulations of the gain and breakdown voltage that correlate well with the results.

Detector with internal gain for short-wave infrared ranging applications

NASA Astrophysics Data System (ADS)

Fathipour, Vala; Mohseni, Hooman

2017-09-01