Performance and stability of mask process correction for EBM-7000

NASA Astrophysics Data System (ADS)

Saito, Yasuko; Chen, George; Wang, Jen-Shiang; Bai, Shufeng; Howell, Rafael; Li, Jiangwei; Tao, Jun; VanDenBroeke, Doug; Wiley, Jim; Takigawa, Tadahiro; Ohnishi, Takayuki; Kamikubo, Takashi; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi

2010-05-01

In order to support complex optical masks today and EUV masks in the near future, it is critical to correct mask patterning errors with a magnitude of up to 20nm over a range of 2000nm at mask scale caused by short range mask process proximity effects. A new mask process correction technology, MPC+, has been developed to achieve the target requirements for the next generation node. In this paper, the accuracy and throughput performance of MPC+ technology is evaluated using the most advanced mask writing tool, the EBM-70001), and high quality mask metrology . The accuracy of MPC+ is achieved by using a new comprehensive mask model. The results of through-pitch and through-linewidth linearity curves and error statistics for multiple pattern layouts (including both 1D and 2D patterns) are demonstrated and show post-correction accuracy of 2.34nm 3σ for through-pitch/through-linewidth linearity. Implementing faster mask model simulation and more efficient correction recipes; full mask area (100cm2) processing run time is less than 7 hours for 32nm half-pitch technology node. From these results, it can be concluded that MPC+ with its higher precision and speed is a practical technology for the 32nm node and future technology generations, including EUV, when used with advance mask writing processes like the EBM-7000.

A novel methodology for litho-to-etch pattern fidelity correction for SADP process

NASA Astrophysics Data System (ADS)

Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

2017-03-01

For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

Thermal image analysis for detecting facemask leakage

NASA Astrophysics Data System (ADS)

Dowdall, Jonathan B.; Pavlidis, Ioannis T.; Levine, James

2005-03-01

Due to the modern advent of near ubiquitous accessibility to rapid international transportation the epidemiologic trends of highly communicable diseases can be devastating. With the recent emergence of diseases matching this pattern, such as Severe Acute Respiratory Syndrome (SARS), an area of overt concern has been the transmission of infection through respiratory droplets. Approved facemasks are typically effective physical barriers for preventing the spread of viruses through droplets, but breaches in a mask"s integrity can lead to an elevated risk of exposure and subsequent infection. Quality control mechanisms in place during the manufacturing process insure that masks are defect free when leaving the factory, but there remains little to detect damage caused by transportation or during usage. A system that could monitor masks in real-time while they were in use would facilitate a more secure environment for treatment and screening. To fulfill this necessity, we have devised a touchless method to detect mask breaches in real-time by utilizing the emissive properties of the mask in the thermal infrared spectrum. Specifically, we use a specialized thermal imaging system to detect minute air leakage in masks based on the principles of heat transfer and thermodynamics. The advantage of this passive modality is that thermal imaging does not require contact with the subject and can provide instant visualization and analysis. These capabilities can prove invaluable for protecting personnel in scenarios with elevated levels of transmission risk such as hospital clinics, border check points, and airports.

Fast Legendre moment computation for template matching

NASA Astrophysics Data System (ADS)

Li, Bing C.

2017-05-01

Normalized cross correlation (NCC) based template matching is insensitive to intensity changes and it has many applications in image processing, object detection, video tracking and pattern recognition. However, normalized cross correlation implementation is computationally expensive since it involves both correlation computation and normalization implementation. In this paper, we propose Legendre moment approach for fast normalized cross correlation implementation and show that the computational cost of this proposed approach is independent of template mask sizes which is significantly faster than traditional mask size dependent approaches, especially for large mask templates. Legendre polynomials have been widely used in solving Laplace equation in electrodynamics in spherical coordinate systems, and solving Schrodinger equation in quantum mechanics. In this paper, we extend Legendre polynomials from physics to computer vision and pattern recognition fields, and demonstrate that Legendre polynomials can help to reduce the computational cost of NCC based template matching significantly.

Wafer hot spot identification through advanced photomask characterization techniques

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; McMurran, Jeff; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2016-10-01

As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that the classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on subresolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. These items are not quantifiable with the 1D metrology techniques of today. Likewise, the mask maker needs advanced characterization methods in order to optimize the mask process to meet the wafer lithographer's needs. These advanced characterization metrics are what is needed to harmonize mask and wafer processes for enhanced wafer hot spot analysis. In this paper, we study advanced mask pattern characterization techniques and their correlation with modeled wafer performance.

Feature Masking in Computer Game Promotes Visual Imagery

ERIC Educational Resources Information Center

Smith, Glenn Gordon; Morey, Jim; Tjoe, Edwin

2007-01-01

Can learning of mental imagery skills for visualizing shapes be accelerated with feature masking? Chemistry, physics fine arts, military tactics, and laparoscopic surgery often depend on mentally visualizing shapes in their absence. Does working with "spatial feature-masks" (skeletal shapes, missing key identifying portions) encourage people to…

Essentials of Play Therapy with Abused Children. [Videotape

ERIC Educational Resources Information Center

Gil, Eliana

This 40-minute instructional video illustrates the unique benefits of play therapy for children who have been physically or sexually abused. It describes how play activities fit into the reparative process and provides helpful pointers for practice. The uses of art supplies, the sandtray, puppets, dollhouse, masks, and more are highlighted.…

Wafer hot spot identification through advanced photomask characterization techniques: part 2

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; Cho, Young; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2017-03-01

Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for mask end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on sub-resolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. To overcome the limitation of 1D metrics, there are numerous on-going industry efforts to better define wafer-predictive metrics through both standard mask metrology and aerial CD methods. Even with these improvements, the industry continues to struggle to define useful correlative metrics that link the mask to final device performance. In part 1 of this work, we utilized advanced mask pattern characterization techniques to extract potential hot spots on the mask and link them, theoretically, to issues with final wafer performance. In this paper, part 2, we complete the work by verifying these techniques at wafer level. The test vehicle (TV) that was used for hot spot detection on the mask in part 1 will be used to expose wafers. The results will be used to verify the mask-level predictions. Finally, wafer performance with predicted and verified mask/wafer condition will be shown as the result of advanced mask characterization. The goal is to maximize mask end user yield through mask-wafer technology harmonization. This harmonization will provide the necessary feedback to determine optimum design, mask specifications, and mask-making conditions for optimal wafer process margin.

Improved mask-based CD uniformity for gridded-design-rule lithography

NASA Astrophysics Data System (ADS)

Faivishevsky, Lev; Khristo, Sergey; Sagiv, Amir; Mangan, Shmoolik

2009-03-01

The difficulties encountered during lithography of state-of-the-art 2D patterns are formidable, and originate from the fact that deep sub-wavelength features are being printed. This results in a practical limit of k1 >=0.4 as well as a multitude of complex restrictive design rules, in order to mitigate or minimize lithographic hot spots. An alternative approach, that is gradually attracting the lithographic community's attention, restricts the design of critical layers to straight, dense lines (a 1D grid), that can be relatively easily printed using current lithographic technology. This is then followed by subsequent, less critical trimming stages to obtain circuit functionality. Thus, the 1D gridded approach allows hotspot-free, proximity-effect free lithography of ultra low- k1 features. These advantages must be supported by a stable CD control mechanism. One of the overriding parameters impacting CDU performance is photo mask quality. Previous publications have demonstrated that IntenCDTM - a novel, mask-based CDU mapping technology running on Applied Materials' Aera2TM aerial imaging mask inspection tool - is ideally fit for detecting mask-based CDU issues in 1D (L&S) patterned masks for memory production. Owing to the aerial nature of image formation, IntenCD directly probes the CD as it is printed on the wafer. In this paper we suggest that IntenCD is naturally fit for detecting mask-based CDU issues in 1D GDR masks. We then study a novel method of recovering and quantifying the physical source of printed CDU, using a novel implementation of the IntenCD technology. We demonstrate that additional, simple measurements, which can be readily performed on board the Aera2TM platform with minimal throughput penalty, may complement IntenCD and allow a robust estimation of the specific nature and strength of mask error source, such as pattern width variation or phase variation, which leads to CDU issues on the printed wafer. We finally discuss the roles played by IntenCD in advanced GDR mask production, starting with tight control over mask production process, continuing to mask qualification at mask shop and ending at in-line wafer CDU correction in fabs.

Preserved subliminal processing and impaired conscious access in schizophrenia

PubMed Central

Del Cul, Antoine; Dehaene, Stanislas; Leboyer, Marion

2006-01-01

Background Studies of visual backward masking have frequently revealed an elevated masking threshold in schizophrenia. This finding has frequently been interpreted as indicating a low-level visual deficit. However, more recent models suggest that masking may also involve late and higher-level integrative processes, while leaving intact early “bottom-up” visual processing. Objectives We tested the hypothesis that the backward masking deficit in schizophrenia corresponds to a deficit in the late stages of conscious perception, whereas the subliminal processing of masked stimuli is fully preserved. Method 28 patients with schizophrenia and 28 normal controls performed two backward-masking experiments. We used Arabic digits as stimuli and varied quasi-continuously the interval with a subsequent mask, thus allowing us to progressively “unmask” the stimuli. We finely quantified their degree of visibility using both objective and subjective measures to evaluate the threshold duration for access to consciousness. We also studied the priming effect caused by the variably masked numbers on a comparison task performed on a subsequently presented and highly visible target number. Results The threshold delay between digit and mask necessary for the conscious perception of the masked stimulus was longer in patients compared to control subjects. This higher consciousness threshold in patients was confirmed by an objective and a subjective measure, and both measures were highly correlated for patients as well as for controls. However, subliminal priming of masked numbers was effective and identical in patients compared to controls. Conclusions Access to conscious report of masked stimuli is impaired in schizophrenia, while fast bottom-up processing of the same stimuli, as assessed by subliminal priming, is preserved. These findings suggest a high-level origin of the masking deficit in schizophrenia, although they leave open for further research its exact relation to previously identified bottom-up visual processing abnormalities. PMID:17146006

Clean induced feature CD shift of EUV mask

NASA Astrophysics Data System (ADS)

Nesládek, Pavel; Schedel, Thorsten; Bender, Markus

2016-05-01

EUV developed in the last decade to the most promising <7nm technology candidate. Defects are considered to be one of the most critical issues of the EUV mask. There are several contributors which make the EUV mask so different from the optical one. First one is the significantly more complicated mask stack consisting currently of 40 Mo/Si double layers, covered by Ru capping layer and TaN/TaO absorber/anti-reflective coating on top of the front face of the mask. Backside is in contrary to optical mask covered as well by conductive layer consisting of Cr or CrN. Second contributor is the fact that EUV mask is currently in contrary to optical mask not yet equipped with sealed pellicle, leading to much higher risk of mask contamination. Third reason is use of EUV mask in vacuum, possibly leading to deposition of vacuum contaminants on the EUV mask surface. Latter reason in combination with tight requirements on backside cleanliness lead to the request of frequent recleaning of the EUV mask, in order to sustain mask lifetime similar to that of optical mask. Mask cleaning process alters slightly the surface of any mask - binary COG mask, as well as phase shift mask of any type and naturally also of the EUV mask as well. In case of optical masks the changes are almost negligible, as the mask is exposed to max. 10-20 re-cleans within its life time. These modifications can be expressed in terms of different specified parameters, e.g. CD shift, phase/trans shift, change of the surface roughness etc. The CD shift, expressed as thinning (or exceptionally thickening) of the dark features on the mask is typically in order of magnitude 0.1nm per process run, which is completely acceptable for optical mask. Projected on the lifetime of EUV mask, assuming 100 clean process cycles, this will lead to CD change of about 10nm. For this reason the requirements for EUV mask cleaning are significantly tighter, << 0.1 nm per process run. This task will look even more challenging, when considering, that the tools for CD measurement at the EUV mask are identical as for optical mask. There is one aspect influencing the CD shift, which demands attention. The mask composition of the EUV mask is significantly different from the optical mask. More precisely there are 2 materials influencing the estimated CD in case of EUV mask, whereas there is one material only in case of optical masks, in first approximation. For optical masks, the CD changes can be attributed to modification of the absorber/ARC layer, as the quartz substrate can be hardly modified by the wet process. For EUV Masks chemical modification of the Ru capping layer - thinning, oxidization etc. are rather more probable and we need to take into account, how this effects can influence the CD measurement process. CD changes measured can be interpreted as either change in the feature size, or modification of the chemical nature of both absorber/ARC layer stack and the Ru capping layer. In our work we try to separate the effect of absorber and Ru/capping layer on the CD shift observed and propose independent way of estimation both parameters.

Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing

NASA Astrophysics Data System (ADS)

Liebmann, Lars W.; Graur, Ioana C.; Leipold, William C.; Oberschmidt, James M.; O'Grady, David S.; Regaill, Denis

1999-07-01

While the benefits of alternating phase shifted masks in improving lithographic process windows at increased resolution are well known throughout the lithography community, broad implementation of this potentially powerful technique has been slow due to the inherent complexity of the layout design and mask manufacturing process. This paper will review a project undertaken at IBM's Semiconductor Research and Development Center and Mask Manufacturing and Development facility to understand the technical and logistical issues associated with the application of alternating phase shifted mask technology to the gate level of a full microprocessor chip. The work presented here depicts an important milestone toward integration of alternating phase shifted masks into the manufacturing process by demonstrating an automated design solution and yielding a functional alternating phase shifted mask. The design conversion of the microprocessor gate level to a conjugate twin shifter alternating phase shift layout was accomplished with IBM's internal design system that automatically scaled the design, added required phase regions, and resolved phase conflicts. The subsequent fabrication of a nearly defect free phase shifted mask, as verified by SEM based die to die inspection, highlights the maturity of the alternating phase shifted mask manufacturing process in IBM's internal mask facility. Well defined and recognized challenges in mask inspection and repair remain and the layout of alternating phase shifted masks present a design and data preparation overhead, but the data presented here demonstrate the feasibility of designing and building manufacturing quality alternating phase shifted masks for the gate level of a microprocessor.

Expanding the printable design space for lithography processes utilizing a cut mask

NASA Astrophysics Data System (ADS)

Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

2016-03-01

The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

EUV mask pilot line at Intel Corporation

NASA Astrophysics Data System (ADS)

Stivers, Alan R.; Yan, Pei-Yang; Zhang, Guojing; Liang, Ted; Shu, Emily Y.; Tejnil, Edita; Lieberman, Barry; Nagpal, Rajesh; Hsia, Kangmin; Penn, Michael; Lo, Fu-Chang

2004-12-01

The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intel's strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.

Out-Phased Array Linearized Signaling (OPALS): A Practical Approach to Physical Layer Encryption

DTIC Science & Technology

2015-10-26

Out-Phased Array Linearized Signaling ( OPALS ): A Practical Approach to Physical Layer Encryption Eric Tollefson, Bruce R. Jordan Jr., and Joseph D... OPALS ) which provides a practical approach to physical-layer encryption through spatial masking. Our approach modifies just the transmitter to employ...of the channel. With Out-Phased Array Linearized Signaling ( OPALS ), we propose a new masking technique that has some advantages of each of the

"Slit Mask Design for the Giant Magellan Telescope Multi-object Astronomical and Cosmological Spectrograph"

NASA Astrophysics Data System (ADS)

Williams, Darius; Marshall, Jennifer L.; Schmidt, Luke M.; Prochaska, Travis; DePoy, Darren L.

2018-01-01

The Giant Magellan Telescope Multi-object Astronomical and Cosmological Spectrograph (GMACS) is currently in development for the Giant Magellan Telescope (GMT). GMACS will employ slit masks with a usable diameter of approximately 0.450 m for the purpose of multi-slit spectroscopy. Of significant importance are the design constraints and parameters of the multi-object slit masks themselves as well as the means for mapping astronomical targets to physical mask locations. Analytical methods are utilized to quantify deformation effects on a potential slit mask due to thermal expansion and vignetting of target light cones. Finite element analysis (FEA) is utilized to simulate mask flexure in changing gravity vectors. The alpha version of the mask creation program for GMACS, GMACS Mask Simulator (GMS), a derivative of the OSMOS Mask Simulator (OMS), is introduced.

Forward Masking in Cochlear Implant Users: Electrophysiological and Psychophysical Data Using Pulse Train Maskers.

PubMed

Adel, Youssef; Hilkhuysen, Gaston; Noreña, Arnaud; Cazals, Yves; Roman, Stéphane; Macherey, Olivier

2017-06-01

Electrical stimulation of auditory nerve fibers using cochlear implants (CI) shows psychophysical forward masking (pFM) up to several hundreds of milliseconds. By contrast, recovery of electrically evoked compound action potentials (eCAPs) from forward masking (eFM) was shown to be more rapid, with time constants no greater than a few milliseconds. These discrepancies suggested two main contributors to pFM: a rapid-recovery process due to refractory properties of the auditory nerve and a slow-recovery process arising from more central structures. In the present study, we investigate whether the use of different maskers between eCAP and psychophysical measures, specifically single-pulse versus pulse train maskers, may have been a source of confound.In experiment 1, we measured eFM using the following: a single-pulse masker, a 300-ms low-rate pulse train masker (LTM, 250 pps), and a 300-ms high-rate pulse train masker (HTM, 5000 pps). The maskers were presented either at same physical current (Φ) or at same perceptual (Ψ) level corresponding to comfortable loudness. Responses to a single-pulse probe were measured for masker-probe intervals ranging from 1 to 512 ms. Recovery from masking was much slower for pulse trains than for the single-pulse masker. When presented at Φ level, HTM produced more and longer-lasting masking than LTM. However, results were inconsistent when LTM and HTM were compared at Ψ level. In experiment 2, masked detection thresholds of single-pulse probes were measured using the same pulse train masker conditions. In line with our eFM findings, masked thresholds for HTM were higher than those for LTM at Φ level. However, the opposite result was found when the pulse trains were presented at Ψ level.Our results confirm the presence of slow-recovery phenomena at the level of the auditory nerve in CI users, as previously shown in animal studies. Inconsistencies between eFM and pFM results, despite using the same masking conditions, further underline the importance of comparing electrophysiological and psychophysical measures with identical stimulation paradigms.

A computational investigation of feedforward and feedback processing in metacontrast backward masking

PubMed Central

Silverstein, David N.

2015-01-01

In human perception studies, visual backward masking has been used to understand the temporal dynamics of subliminal vs. conscious perception. When a brief target stimulus is followed by a masking stimulus after a short interval of <100 ms, performance on the target is impaired when the target and mask are in close spatial proximity. While the psychophysical properties of backward masking have been studied extensively, there is still debate on the underlying cortical dynamics. One prevailing theory suggests that the impairment of target performance due to the mask is the result of lateral inhibition between the target and mask in feedforward processing. Another prevailing theory suggests that this impairment is due to the interruption of feedback processing of the target by the mask. This computational study demonstrates that both aspects of these theories may be correct. Using a biophysical model of V1 and V2, visual processing was modeled as interacting neocortical attractors, which must propagate up the visual stream. If an activating target attractor in V1 is quiesced enough with lateral inhibition from a mask, or not reinforced by recurrent feedback, it is more likely to burn out before becoming fully active and progressing through V2 and beyond. Results are presented which simulate metacontrast backward masking with an increasing stimulus interval and with the presence and absence of feedback activity. This showed that recurrent feedback diminishes backward masking effects and can make conscious perception more likely. One model configuration presented a metacontrast noise mask in the same hypercolumns as the target, and produced type-A masking. A second model configuration presented a target line with two parallel adjacent masking lines, and produced type-B masking. Future work should examine how the model extends to more complex spatial mask configurations. PMID:25759672

Selective spatial attention modulates bottom-up informational masking of speech

PubMed Central

Carlile, Simon; Corkhill, Caitlin

2015-01-01

To hear out a conversation against other talkers listeners overcome energetic and informational masking. Largely attributed to top-down processes, information masking has also been demonstrated using unintelligible speech and amplitude-modulated maskers suggesting bottom-up processes. We examined the role of speech-like amplitude modulations in information masking using a spatial masking release paradigm. Separating a target talker from two masker talkers produced a 20 dB improvement in speech reception threshold; 40% of which was attributed to a release from informational masking. When across frequency temporal modulations in the masker talkers are decorrelated the speech is unintelligible, although the within frequency modulation characteristics remains identical. Used as a masker as above, the information masking accounted for 37% of the spatial unmasking seen with this masker. This unintelligible and highly differentiable masker is unlikely to involve top-down processes. These data provides strong evidence of bottom-up masking involving speech-like, within-frequency modulations and that this, presumably low level process, can be modulated by selective spatial attention. PMID:25727100

Selective spatial attention modulates bottom-up informational masking of speech.

PubMed

Carlile, Simon; Corkhill, Caitlin

2015-03-02

To hear out a conversation against other talkers listeners overcome energetic and informational masking. Largely attributed to top-down processes, information masking has also been demonstrated using unintelligible speech and amplitude-modulated maskers suggesting bottom-up processes. We examined the role of speech-like amplitude modulations in information masking using a spatial masking release paradigm. Separating a target talker from two masker talkers produced a 20 dB improvement in speech reception threshold; 40% of which was attributed to a release from informational masking. When across frequency temporal modulations in the masker talkers are decorrelated the speech is unintelligible, although the within frequency modulation characteristics remains identical. Used as a masker as above, the information masking accounted for 37% of the spatial unmasking seen with this masker. This unintelligible and highly differentiable masker is unlikely to involve top-down processes. These data provides strong evidence of bottom-up masking involving speech-like, within-frequency modulations and that this, presumably low level process, can be modulated by selective spatial attention.

Optimizing defect inspection strategy through the use of design-aware database control layers

NASA Astrophysics Data System (ADS)

Stoler, Dvori; Ruch, Wayne; Ma, Weimin; Chakravarty, Swapnajit; Liu, Steven; Morgan, Ray; Valadez, John; Moore, Bill; Burns, John

2007-10-01

Resolution limitations in the mask making process can cause differences between the features that appear in a database and those printed to a reticle. These differences may result from intentional or unintentional features in the database exceeding the resolution limit of the mask making process such as small gaps or lines in the data, line end shortening on small sub-resolution assist features etc creating challenges to both mask writing and mask inspection. Areas with high variance from design to mask, often referred to as high MEEF areas (mask error enhancement factor), become highly problematic and can directly impact mask and device yield, mask manufacturing cycle time and ultimately mask costs. Specific to mask inspection it may be desirable to inspect certain non-critical or non-relevant features at reduced sensitivity so as not to detect real, but less significant process defects. In contrast there may also be times where increased sensitivity is required for critical mask features or areas. Until recently, this process was extremely manual, creating added time and cost to the mask inspection cycle. Shifting to more intelligent and automated inspection flows is the key focus of this paper. A novel approach to importing design data directly into the mask inspection to include both MDP generated MRC errors files and LRC generated MEEF files. The results of recently developed inspection and review capability based upon controlling defect inspection using design aware data base control layers on a pixel basis are discussed. Typical mask shop applications and implementations will be shown.

Facile preparation of porous alumina through-hole masks for sputtering by two-layer anodization

NASA Astrophysics Data System (ADS)

Yanagishita, Takashi; Masuda, Hideki

2016-08-01

Highly ordered porous alumina through-hole masks were fabricated on a substrate by combining two-layer anodization with subsequent through-holing by selective etching. This process allowed the fabrication of porous alumina masks without an increase in pore size during the etching performed for through-holing. Additionally, the process contributed to improved operability in the setting of the masks on substrates because the second anodizing layer acts as a supporting layer for the handling of the mask. The fabrication of ordered Au nanodot arrays was demonstrated as an example application of the through-hole masks obtained by the present process.

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan

2015-07-15

GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grownmore » with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.« less

Recovery from Object Substitution Masking Induced by Transient Suppression of Visual Motion Processing: A Repetitive Transcranial Magnetic Stimulation Study

ERIC Educational Resources Information Center

Hirose, Nobuyuki; Kihara, Ken; Mima, Tatsuya; Ueki, Yoshino; Fukuyama, Hidenao; Osaka, Naoyuki

2007-01-01

Object substitution masking is a form of visual backward masking in which a briefly presented target is rendered invisible by a lingering mask that is too sparse to produce lower image-level interference. Recent studies suggested the importance of an updating process in a higher object-level representation, which should rely on the processing of…

Effect of SPM-based cleaning POR on EUV mask performance

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Lee, Han-shin; Yoon, Jinsang; Shimomura, Takeya; Friz, Alex; Montgomery, Cecilia; Ma, Andy; Goodwin, Frank; Kang, Daehyuk; Chung, Paul; Shin, Inkyun; Cho, H.

2011-11-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. The fact that a pellicle is not used to protect the mask surface in EUV lithography suggests that EUV masks may have to undergo more cleaning cycles during their lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality and patterning performance during 30 cycles of Samsung's EUV mask SPM-based cleaning and 20 cycles of SEMATECH ADT exposure. We have observed that the quality and patterning performance of EUV masks does not significantly change during these processes except mask pattern CD change. To resolve this issue, we have developed an acid-free cleaning POR and substantially improved EUV mask film loss compared to the SPM-based cleaning POR.

EUV mask manufacturing readiness in the merchant mask industry

NASA Astrophysics Data System (ADS)

Green, Michael; Choi, Yohan; Ham, Young; Kamberian, Henry; Progler, Chris; Tseng, Shih-En; Chiou, Tsann-Bim; Miyazaki, Junji; Lammers, Ad; Chen, Alek

2017-10-01

As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process "stress testing" to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for the broadest community possible as the technology is implemented first within and then beyond the initial early adopters.

EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Anxiety sensitivity: the role of conscious awareness and selective attentional bias to physical threat.

PubMed

Hunt, Caroline; Keogh, Edmund; French, Christopher C

2006-08-01

Selective attentional biases were examined amongst individuals varying in levels of physical anxiety sensitivity. The dot-probe paradigm was used to examine attention towards anxiety symptomatology, social threat and positive words. Stimuli were presented above (unmasked) and below (masked) the level of conscious awareness. High physical anxiety sensitivity was associated with attentional vigilance for anxiety symptomatology words in both unmasked and masked conditions. For positive words, however, those high in anxiety sensitivity were found to avoid such stimuli when they were masked, whereas they exhibited a relative vigilance when unmasked. If the differences between awareness conditions are reliable, then the impact of the automatic vigilance for threat might be modified by conscious attempts to direct attention towards other types of stimuli. (c) 2006 APA, all rights reserved

Auditory processing efficiency deficits in children with developmental language impairments

NASA Astrophysics Data System (ADS)

Hartley, Douglas E. H.; Moore, David R.

2002-12-01

The ``temporal processing hypothesis'' suggests that individuals with specific language impairments (SLIs) and dyslexia have severe deficits in processing rapidly presented or brief sensory information, both within the auditory and visual domains. This hypothesis has been supported through evidence that language-impaired individuals have excess auditory backward masking. This paper presents an analysis of masking results from several studies in terms of a model of temporal resolution. Results from this modeling suggest that the masking results can be better explained by an ``auditory efficiency'' hypothesis. If impaired or immature listeners have a normal temporal window, but require a higher signal-to-noise level (poor processing efficiency), this hypothesis predicts the observed small deficits in the simultaneous masking task, and the much larger deficits in backward and forward masking tasks amongst those listeners. The difference in performance on these masking tasks is predictable from the compressive nonlinearity of the basilar membrane. The model also correctly predicts that backward masking (i) is more prone to training effects, (ii) has greater inter- and intrasubject variability, and (iii) increases less with masker level than do other masking tasks. These findings provide a new perspective on the mechanisms underlying communication disorders and auditory masking.

Mechanical microencapsulation: The best technique in taste masking for the manufacturing scale - Effect of polymer encapsulation on drug targeting.

PubMed

Al-Kasmi, Basheer; Alsirawan, Mhd Bashir; Bashimam, Mais; El-Zein, Hind

2017-08-28

Drug taste masking is a crucial process for the preparation of pediatric and geriatric formulations as well as fast dissolving tablets. Taste masking techniques aim to prevent drug release in saliva and at the same time to obtain the desired release profile in gastrointestinal tract. Several taste masking methods are reported, however this review has focused on a group of promising methods; complexation, encapsulation, and hot melting. The effects of each method on the physicochemical properties of the drug are described in details. Furthermore, a scoring system was established to evaluate each process using recent published data of selected factors. These include, input, process, and output factors that are related to each taste masking method. Input factors include the attributes of the materials used for taste masking. Process factors include equipment type and process parameters. Finally, output factors, include taste masking quality and yield. As a result, Mechanical microencapsulation obtained the highest score (5/8) along with complexation with cyclodextrin suggesting that these methods are the most preferable for drug taste masking. Copyright © 2017 Elsevier B.V. All rights reserved.

Quantitative evaluation of manufacturability and performance for ILT produced mask shapes using a single-objective function

NASA Astrophysics Data System (ADS)

Choi, Heon; Wang, Wei-long; Kallingal, Chidam

2015-03-01

The continuous scaling of semiconductor devices is quickly outpacing the resolution improvements of lithographic exposure tools and processes. This one-sided progression has pushed optical lithography to its limits, resulting in the use of well-known techniques such as Sub-Resolution Assist Features (SRAF's), Source-Mask Optimization (SMO), and double-patterning, to name a few. These techniques, belonging to a larger category of Resolution Enhancement Techniques (RET), have extended the resolution capabilities of optical lithography at the cost of increasing mask complexity, and therefore cost. One such technique, called Inverse Lithography Technique (ILT), has attracted much attention for its ability to produce the best possible theoretical mask design. ILT treats the mask design process as an inverse problem, where the known transformation from mask to wafer is carried out backwards using a rigorous mathematical approach. One practical problem in the application of ILT is the resulting contour-like mask shapes that must be "Manhattanized" (composed of straight edges and 90-deg corners) in order to produce a manufacturable mask. This conversion process inherently degrades the mask quality as it is a departure from the "optimal mask" represented by the continuously curved shapes produced by ILT. However, simpler masks composed of longer straight edges reduce the mask cost as it lowers the shot count and saves mask writing time during mask fabrication, resulting in a conflict between manufacturability and performance for ILT produced masks1,2. In this study, various commonly used metrics will be combined into an objective function to produce a single number to quantitatively measure a particular ILT solution's ability to balance mask manufacturability and RET performance. Several metrics that relate to mask manufacturing costs (i.e. mask vertex count, ILT computation runtime) are appropriately weighted against metrics that represent RET capability (i.e. process-variation band, edge-placement-error) in order to reflect the desired practical balance. This well-defined scoring system allows direct comparison of several masks with varying degrees of complexities. Using this method, ILT masks produced with increasing mask constraints will be compared, and it will be demonstrated that using the smallest minimum width for mask shapes does not always produce the optimal solution.

Evaluation of CS (o-chlorobenzylidene malononitrile) concentrations during U.S. Army mask confidence training.

PubMed

Hout, Joseph J; Kluchinsky, Timothy; LaPuma, Peter T; White, Duvel W

2011-10-01

All soldiers in the U.S. Army are required to complete mask confidence training with o-chlorobenzylidene malononitrile (CS). To instill confidence in the protective capability of the military protective mask, CS is thermally dispersed in a room where soldiers wearing military protective masks are required to conduct various physical exercises, break the seal of their mask, speak, and remove their mask. Soldiers immediately feel the irritating effects of CS when the seal of the mask is broken, which reinforces the mask's ability to shield the soldier from airborne chemical hazards. In the study described in this article, the authors examined the CS concentration inside a mask confidence chamber operated in accordance with U.S. Army training guidelines. The daily average CS concentrations ranged from 2.33-3.29 mg/m3 and exceeded the threshold limit value ceiling, the recommended exposure limit ceiling, and the concentration deemed immediately dangerous to life and health. The minimum and maximum CS concentration used during mask confidence training should be evaluated.

How to obtain accurate resist simulations in very low-k1 era?

NASA Astrophysics Data System (ADS)

Chiou, Tsann-Bim; Park, Chan-Ha; Choi, Jae-Seung; Min, Young-Hong; Hansen, Steve; Tseng, Shih-En; Chen, Alek C.; Yim, Donggyu

2006-03-01

A procedure for calibrating a resist model iteratively adjusts appropriate parameters until the simulations of the model match the experimental data. The tunable parameters may include the shape of the illuminator, the geometry and transmittance/phase of the mask, light source and scanner-related parameters that affect imaging quality, resist process control and most importantly the physical/chemical factors in the resist model. The resist model can be accurately calibrated by measuring critical dimensions (CD) of a focus-exposure matrix (FEM) and the technique has been demonstrated to be very successful in predicting lithographic performance. However, resist model calibration is more challenging in the low k1 (<0.3) regime because numerous uncertainties, such as mask and resist CD metrology errors, are becoming too large to be ignored. This study demonstrates a resist model calibration procedure for a 0.29 k1 process using a 6% halftone mask containing 2D brickwall patterns. The influence of different scanning electron microscopes (SEM) and their wafer metrology signal analysis algorithms on the accuracy of the resist model is evaluated. As an example of the metrology issue of the resist pattern, the treatment of a sidewall angle is demonstrated for the resist line ends where the contrast is relatively low. Additionally, the mask optical proximity correction (OPC) and corner rounding are considered in the calibration procedure that is based on captured SEM images. Accordingly, the average root-mean-square (RMS) error, which is the difference between simulated and experimental CDs, can be improved by considering the metrological issues. Moreover, a weighting method and a measured CD tolerance are proposed to handle the different CD variations of the various edge points of the wafer resist pattern. After the weighting method is implemented and the CD selection criteria applied, the RMS error can be further suppressed. Therefore, the resist CD and process window can be confidently evaluated using the accurately calibrated resist model. One of the examples simulates the sensitivity of the mask pattern error, which is helpful to specify the mask CD control.

Masking disrupts reentrant processing in human visual cortex.

PubMed

Fahrenfort, J J; Scholte, H S; Lamme, V A F

2007-09-01

In masking, a stimulus is rendered invisible through the presentation of a second stimulus shortly after the first. Over the years, authors have typically explained masking by postulating some early disruption process. In these feedforward-type explanations, the mask somehow "catches up" with the target stimulus, disrupting its processing either through lateral or interchannel inhibition. However, studies from recent years indicate that visual perception--and most notably visual awareness itself--may depend strongly on cortico-cortical feedback connections from higher to lower visual areas. This has led some researchers to propose that masking derives its effectiveness from selectively interrupting these reentrant processes. In this experiment, we used electroencephalogram measurements to determine what happens in the human visual cortex during detection of a texture-defined square under nonmasked (seen) and masked (unseen) conditions. Electro-encephalogram derivatives that are typically associated with reentrant processing turn out to be absent in the masked condition. Moreover, extrastriate visual areas are still activated early on by both seen and unseen stimuli, as shown by scalp surface Laplacian current source-density maps. This conclusively shows that feedforward processing is preserved, even when subject performance is at chance as determined by objective measures. From these results, we conclude that masking derives its effectiveness, at least partly, from disrupting reentrant processing, thereby interfering with the neural mechanisms of figure-ground segmentation and visual awareness itself.

Metacontrast masking is processed before grapheme-color synesthesia.

PubMed

Bacon, Michael Patrick; Bridgeman, Bruce; Ramachandran, Vilayanur S

2013-01-01

We investigated the physiological mechanism of grapheme-color synesthesia using metacontrast masking. A metacontrast target is rendered invisible by a mask that is delayed by about 60 ms; the target and mask do not overlap in space or time. Little masking occurs, however, if the target and mask are simultaneous. This effect must be cortical, because it can be obtained dichoptically. To compare the data for synesthetes and controls, we developed a metacontrast design in which nonsynesthete controls showed weaker dichromatic masking (i.e., the target and mask were in different colors) than monochromatic masking. We accomplished this with an equiluminant target, mask, and background for each observer. If synesthetic color affected metacontrast, synesthetes should show monochromatic masking more similar to the weak dichromatic masking among controls, because synesthetes could add their synesthetic color to the monochromatic condition. The target-mask pairs used for each synesthete were graphemes that elicited strong synesthetic colors. We found stronger monochromatic than dichromatic U-shaped metacontrast for both synesthetes and controls, with optimal masking at an asynchrony of 66 ms. The difference in performance between the monochromatic and dichromatic conditions in the synesthetes indicates that synesthesia occurs at a later processing stage than does metacontrast masking.

Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

NASA Astrophysics Data System (ADS)

Kamikubo, Takashi; Ohnishi, Takayuki; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi; Bai, Shufeng; Wang, Jen-Shiang; Howell, Rafael; Chen, George; Li, Jiangwei; Tao, Jun; Wiley, Jim; Kurosawa, Terunobu; Saito, Yasuko; Takigawa, Tadahiro

2010-09-01

In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.

Mask cost of ownership for advanced lithography

NASA Astrophysics Data System (ADS)

Muzio, Edward G.; Seidel, Philip K.

2000-07-01

As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

A comparison of multi-metal deposition processes utilising gold nanoparticles and an evaluation of their application to 'low yield' surfaces for finger mark development.

PubMed

Fairley, C; Bleay, S M; Sears, V G; NicDaeid, N

2012-04-10

This paper reports a comparison of the effectiveness and practicality of using different multi-metal deposition processes for finger mark development. The work investigates whether modifications can be made to improve the performance of the existing process published by Schnetz. Secondly, we compare the ability of different multi-metal deposition processes to develop finger marks on a range of surfaces with that of other currently used development processes. All published multi-metal deposition processes utilise an initial stage of colloidal gold deposition followed by enhancement of the marks with using a physical developer. All possible combinations of colloidal gold and physical developer stages were tested. The method proposed by Schnetz was shown to be the most effective process, however a modification which reduced the pH of the enhancement solution was revealed to provide the best combination of effectiveness and practicality. In trials comparing the modified formulation with vacuum metal deposition, superglue and powder suspensions on surfaces which typically give low finger mark yields (cling film, plasticised vinyl, leather and masking tape), the modified method produced significantly better results over existing processes for cling film and plasticised vinyl. The modified formulation was found to be ineffective on both masking tape and leather. It is recommended that further tests be carried out on the modified multi-metal deposition formulation to establish whether it could be introduced for operational work on cling film material in particular. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.

Cost-effective masks for deep x-ray lithography

NASA Astrophysics Data System (ADS)

Scheunemann, Heinz-Ulrich; Loechel, Bernd; Jian, Linke; Schondelmaier, Daniel; Desta, Yohannes M.; Goettert, Jost

2003-04-01

The production of X-ray masks is one of the key techniques for X-ray lithography and the LIGA process. Different ways for the fabrication of X-ray masks has been established. Very sophisticated, difficult and expensive procedures are required to produce high precision and high quality X-ray masks. In order to minimize the cost of an X-ray mask, the mask blank must be inexpensive and readily available. The steps involved in the fabrication process must also be minimal. In the past, thin membranes made of titanium, silicon carbide, silicon nitride (2-5μm) or thick beryllium substrates (500μm) have been used as mask blanks. Thin titanium and silicon compounds have very high transparency for X-rays; therefore, these materials are predestined for use as mask membrane material. However, the handling and fabrication of thin membranes is very difficult, thus expensive. Beryllium is highly transparent to X-rays, but the processing and use of beryllium is risky due to potential toxicity. During the past few years graphite based X-ray masks have been in use at various research centers, but the sidewall quality of the generated resist patterns is in the range of 200-300 nm Ra. We used polished graphite to improve the sidewall roughness, but polished graphite causes other problems in the fabrication of X-ray masks. This paper describes the advantages associated with the use of polished graphite as mask blank as well as the fabrication process for this low cost X-ray mask. Alternative membrane materials will also be discussed.

Protective Face Mask

NASA Technical Reports Server (NTRS)

1981-01-01

Mask to protect the physically impaired from injuries to the face and head has been developed by Langley Research Center. It is made of composite materials, usually graphite or boron fibers woven into a matrix. Weighs less than three ounces.

Propagation of resist heating mask error to wafer level

NASA Astrophysics Data System (ADS)

Babin, S. V.; Karklin, Linard

2006-10-01

As technology is approaching 45 nm and below the IC industry is experiencing a severe product yield hit due to rapidly shrinking process windows and unavoidable manufacturing process variations. Current EDA tools are unable by their nature to deliver optimized and process-centered designs that call for 'post design' localized layout optimization DFM tools. To evaluate the impact of different manufacturing process variations on final product it is important to trace and evaluate all errors through design to manufacturing flow. Photo mask is one of the critical parts of this flow, and special attention should be paid to photo mask manufacturing process and especially to mask tight CD control. Electron beam lithography (EBL) is a major technique which is used for fabrication of high-end photo masks. During the writing process, resist heating is one of the sources for mask CD variations. Electron energy is released in the mask body mainly as heat, leading to significant temperature fluctuations in local areas. The temperature fluctuations cause changes in resist sensitivity, which in turn leads to CD variations. These CD variations depend on mask writing speed, order of exposure, pattern density and its distribution. Recent measurements revealed up to 45 nm CD variation on the mask when using ZEP resist. The resist heating problem with CAR resists is significantly smaller compared to other types of resists. This is partially due to higher resist sensitivity and the lower exposure dose required. However, there is no data yet showing CD errors on the wafer induced by CAR resist heating on the mask. This effect can be amplified by high MEEF values and should be carefully evaluated at 45nm and below technology nodes where tight CD control is required. In this paper, we simulated CD variation on the mask due to resist heating; then a mask pattern with the heating error was transferred onto the wafer. So, a CD error on the wafer was evaluated subject to only one term of the mask error budget - the resist heating CD error. In simulation of exposure using a stepper, variable MEEF was considered.

Dead space variability of face masks for valved holding chambers.

PubMed

Amirav, Israel; Newhouse, Michael T

2008-03-01

Valved holding chambers with masks are commonly used to deliver inhaled medications to young children with asthma. Optimal mask properties such as their dead space volume have received little attention. The smaller the mask the more likely it is that a greater proportion of the dose in the VHC will be inhaled with each breath, thus speeding VHC emptying and improving overall aerosol delivery efficiency and dose. Masks may have different DSV and thus different performance. To compare both physical dead space and functional dead space of different face masks under various applied pressures. The DSV of three commonly used face masks of VHCs was measured by water displacement both under various pressures (to simulate real-life application, dynamic DSV) and under no pressure (static DSV). There was a great variability of both static and dynamic dead space among various face mask for VHCs, which is probably related to their flexibility. Different masks have different DSV characteristics. This variability should be taken into account when comparing the clinical efficacy of various VHCs.

Mask manufacturing of advanced technology designs using multi-beam lithography (Part 1)

NASA Astrophysics Data System (ADS)

Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

2016-10-01

As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking Sub-Resolution Assist Features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, we study one such process, characterizing mask manufacturing capability of 10nm and below structures with particular focus on minimum resolution and pattern fidelity.

Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)

NASA Astrophysics Data System (ADS)

Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

2016-09-01

As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking sub-resolution assist features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, Part 2 of our study, we further characterize an MBMW process for 10nm and below logic node mask manufacturing including advanced pattern analysis and write time demonstration.

Model-based MPC enables curvilinear ILT using either VSB or multi-beam mask writers

NASA Astrophysics Data System (ADS)

Pang, Linyong; Takatsukasa, Yutetsu; Hara, Daisuke; Pomerantsev, Michael; Su, Bo; Fujimura, Aki

2017-07-01

Inverse Lithography Technology (ILT) is becoming the choice for Optical Proximity Correction (OPC) of advanced technology nodes in IC design and production. Multi-beam mask writers promise significant mask writing time reduction for complex ILT style masks. Before multi-beam mask writers become the main stream working tools in mask production, VSB writers will continue to be the tool of choice to write both curvilinear ILT and Manhattanized ILT masks. To enable VSB mask writers for complex ILT style masks, model-based mask process correction (MB-MPC) is required to do the following: 1). Make reasonable corrections for complex edges for those features that exhibit relatively large deviations from both curvilinear ILT and Manhattanized ILT designs. 2). Control and manage both Edge Placement Errors (EPE) and shot count. 3. Assist in easing the migration to future multi-beam mask writer and serve as an effective backup solution during the transition. In this paper, a solution meeting all those requirements, MB-MPC with GPU acceleration, will be presented. One model calibration per process allows accurate correction regardless of the target mask writer.

Optical images of visible and invisible percepts in the primary visual cortex of primates

PubMed Central

Macknik, Stephen L.; Haglund, Michael M.

1999-01-01

We optically imaged a visual masking illusion in primary visual cortex (area V-1) of rhesus monkeys to ask whether activity in the early visual system more closely reflects the physical stimulus or the generated percept. Visual illusions can be a powerful way to address this question because they have the benefit of dissociating the stimulus from perception. We used an illusion in which a flickering target (a bar oriented in visual space) is rendered invisible by two counter-phase flickering bars, called masks, which flank and abut the target. The target and masks, when shown separately, each generated correlated activity on the surface of the cortex. During the illusory condition, however, optical signals generated in the cortex by the target disappeared although the image of the masks persisted. The optical image thus was correlated with perception but not with the physical stimulus. PMID:10611363

Optical proximity correction for anamorphic extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Clifford, Chris; Lam, Michael; Raghunathan, Ananthan; Jiang, Fan; Fenger, Germain; Adam, Kostas

2017-10-01

The change from isomorphic to anamorphic optics in high numerical aperture extreme ultraviolet scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated and verified by rigorous simulation. Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking. OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs that are more tolerant to mask errors.

Fabrication and Characteristics of Free Standing Shaped Pupil Masks for TPF-Coronagraph

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatham; Echternach, Pierre M.; Dickie, Matthew R.; Muller, Richard E.; White, Victor E.; Hoppe, Daniel J.; Shaklan, Stuart B.; Belikov, Ruslan; Kasdin, N. Jeremy; Vanderbei, Robert J.;

Object Substitution Masking Induced by Illusory Masks: Evidence for Higher Object-Level Locus of Interference

ERIC Educational Resources Information Center

Hirose, Nobuyuki; Osaka, Naoyuki

2009-01-01

A briefly presented target can be rendered invisible by a lingering sparse mask that does not even touch it. This form of visual backward masking, called object substitution masking, is thought to occur at the object level of processing. However, it remains unclear whether object-level interference alone produces substitution masking because…

Interactions between concentric form-from-structure and face perception revealed by visual masking but not adaptation

PubMed Central

Feczko, Eric; Shulman, Gordon L.; Petersen, Steven E.; Pruett, John R.

2014-01-01

Findings from diverse subfields of vision research suggest a potential link between high-level aspects of face perception and concentric form-from-structure perception. To explore this relationship, typical adults performed two adaptation experiments and two masking experiments to test whether concentric, but not nonconcentric, Glass patterns (a type of form-from-structure stimulus) utilize a processing mechanism shared by face perception. For the adaptation experiments, subjects were presented with an adaptor for 5 or 20 s, prior to discriminating a target. In the masking experiments, subjects saw a mask, then a target, and then a second mask. Measures of discriminability and bias were derived and repeated measures analysis of variance tested for pattern-specific masking and adaptation effects. Results from Experiment 1 show no Glass pattern-specific effect of adaptation to faces; results from Experiment 2 show concentric Glass pattern masking, but not adaptation, may impair upright/inverted face discrimination; results from Experiment 3 show concentric and radial Glass pattern masking impaired subsequent upright/inverted face discrimination more than translational Glass pattern masking; and results from Experiment 4 show concentric and radial Glass pattern masking impaired subsequent face gender discrimination more than translational Glass pattern masking. Taken together, these findings demonstrate interactions between concentric form-from-structure and face processing, suggesting a possible common processing pathway. PMID:24563526

Conceptual Masking: How One Picture Captures Attention from Another Picture.

ERIC Educational Resources Information Center

Loftus, Geoffrey R.; And Others

1988-01-01

Five experiments studied operations of conceptual masking--the reduction of conceptual memory performance for an initial stimulus when it is followed by a masking picture process. The subjects were 337 undergraduates at the University of Washington (Seattle). Conceptual masking is distinguished from perceptual masking. (TJH)

Identification of optimal mask size parameter for noise filtering in 99mTc-methylene diphosphonate bone scintigraphy images.

PubMed

Pandey, Anil K; Bisht, Chandan S; Sharma, Param D; ArunRaj, Sreedharan Thankarajan; Taywade, Sameer; Patel, Chetan; Bal, Chandrashekhar; Kumar, Rakesh

2017-11-01

Tc-methylene diphosphonate (Tc-MDP) bone scintigraphy images have limited number of counts per pixel. A noise filtering method based on local statistics of the image produces better results than a linear filter. However, the mask size has a significant effect on image quality. In this study, we have identified the optimal mask size that yields a good smooth bone scan image. Forty four bone scan images were processed using mask sizes 3, 5, 7, 9, 11, 13, and 15 pixels. The input and processed images were reviewed in two steps. In the first step, the images were inspected and the mask sizes that produced images with significant loss of clinical details in comparison with the input image were excluded. In the second step, the image quality of the 40 sets of images (each set had input image, and its corresponding three processed images with 3, 5, and 7-pixel masks) was assessed by two nuclear medicine physicians. They selected one good smooth image from each set of images. The image quality was also assessed quantitatively with a line profile. Fisher's exact test was used to find statistically significant differences in image quality processed with 5 and 7-pixel mask at a 5% cut-off. A statistically significant difference was found between the image quality processed with 5 and 7-pixel mask at P=0.00528. The identified optimal mask size to produce a good smooth image was found to be 7 pixels. The best mask size for the John-Sen Lee filter was found to be 7×7 pixels, which yielded Tc-methylene diphosphonate bone scan images with the highest acceptable smoothness.

Data sharing system for lithography APC

NASA Astrophysics Data System (ADS)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Design architecture of double spiral interdigitated electrode with back gate electrode for biosensor application

NASA Astrophysics Data System (ADS)

Fathil, M. F. M.; Arshad, M. K. Md.; Hashim, U.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Adzhri, R.; Zaki, M.; Azman, A. H.

2016-07-01

This paper presents the preparation method of photolithography chrome mask design used in fabrication process of double spiral interdigitated electrode with back gate biasing based biosensor. By learning the fabrication process flow of the biosensor, the chrome masks are designed through drawing using the AutoCAD software. The overall width and length of the device is optimized at 7.0 mm and 10.0 mm, respectively. Fabrication processes of the biosensor required three chrome masks, which included back gate opening, spiral IDE formation, and passivation area formation. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

Reentrant processing mediates object substitution masking: comment on Põder (2013).

PubMed

Di Lollo, Vincent

2014-01-01

Object-substitution masking (OSM) occurs when a target stimulus and a surrounding mask are displayed briefly together, and the display then continues with the mask alone. Target identification is accurate when the stimuli co-terminate but is progressively impaired as the duration of the trailing mask is increased. In reentrant accounts, OSM is said to arise from iterative exchanges between brain regions connected by two-way pathways. In an alternative account, OSM is explained on the basis of exclusively feed-forward processes, without recourse to reentry. Here I show that the feed-forward account runs afoul of the extant phenomenological, behavioral, brain-imaging, and electrophysiological evidence. Further, the feed-forward assumption that masking occurs when attention finds a degraded target is shown to be entirely ad hoc. In contrast, the evidence is uniformly consistent with a reentrant-processing account of OSM.

Inexpensive Masks for Film Deposition

NASA Technical Reports Server (NTRS)

Conley, W. R.

1986-01-01

Sputtered sprayed lines less than 2 millimeters wide made by superimposing masks with partially overlapping openings. Slits first cut in masks by stamping or other economical process. Masks superimposed so slits define new openings narrower than original slits.

"The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

ERIC Educational Resources Information Center

Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

2015-01-01

Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hu; Muraki, Yu; Karahashi, Kazuhiro

2015-07-15

Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +}more » or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.« less

Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

NASA Astrophysics Data System (ADS)

Palitzsch, Katrin; Kubis, Michael; Schroeder, Uwe P.; Schumacher, Karl; Frangen, Andreas

2004-05-01

CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.

Assessment of molecular contamination in mask pod

NASA Astrophysics Data System (ADS)

Foray, Jean Marie; Dejaune, Patrice; Sergent, Pierre; Gough, Stuart; Cheung, D.; Davenet, Magali; Favre, Arnaud; Rude, C.; Trautmann, T.; Tissier, Michel; Fontaine, H.; Veillerot, M.; Avary, K.; Hollein, I.; Lerit, R.

2008-04-01

Context/ study Motivation: Contamination and especially Airbone Molecular Contamination (AMC) is a critical issue for mask material flow with a severe and fairly unpredictable risk of induced contamination and damages especially for 193 nm lithography. It is therefore essential to measure, to understand and then try to reduce AMC in mask environment. Mask material flow was studied in a global approach by a pool of European partners, especially within the frame of European MEDEA+ project, so called "MUSCLE". This paper deals with results and assessment of mask pod environment in term of molecular contamination in a first step, then in a second step preliminary studies to reduce mask pod influence and contamination due to material out gassing. Approach and techniques: A specific assessment of environmental / molecular contamination along the supply chain was performed by all partners. After previous work presented at EMLC 07, further studies were performed on real time contamination measurement pod at different sites locations (including Mask manufacturing site, blank manufacturing sites, IC fab). Studies were linked to the main critical issues: cleaning, storage, handling, materials and processes. Contamination measurement campaigns were carried out along the mask supply chain using specific Adixen analyzer in order to monitor in real time organic contaminants (ppb level) in mask pods. Key results would be presented: VOC, AMC and humidity level on different kinds of mask carriers, impact of basic cleaning on pod outgassing measurement (VOC, NH3), and process influence on pod contamination... In a second step, preliminary specific pod conditioning studies for better pod environment were performed based on Adixen vacuum process. Process influence had been experimentally measured in term of molecular outgassing from mask pods. Different AMC experimental characterization methods had been carried out leading to results on a wide range of organic and inorganic contaminants: by inline techniques based on Adixen humidity, also VOC and organic sensors, together by off-line techniques already used in the extensive previous mask pods benchmark (TD-GCMS & Ionic Chromatography). Humidity and VOC levels from mask carriers had shown significant reduction after Adixen pod conditioning process. Focus had been made on optimized vacuum step (for AMC) after particles carrier cleaning cycle. Based upon these key results new procedures, as well as guidelines for mask carrier cleaning optimization are proposed to improve pod contamination control. Summary results/next steps: This paper reports molecular contamination measurement campaigns performed by a pool of European partners along the mask supply chain. It allows us to investigate, identify and quantify critical molecular contamination in mask pod, as well as VOC and humidity, issues depending on locations, uses, and carrier's type. Preliminary studies highlight initial process solutions for pods conditioning that are being used for short term industrialization and further industrialized.

Challenges and requirements of mask data processing for multi-beam mask writer

NASA Astrophysics Data System (ADS)

Choi, Jin; Lee, Dong Hyun; Park, Sinjeung; Lee, SookHyun; Tamamushi, Shuichi; Shin, In Kyun; Jeon, Chan Uk

2015-07-01

To overcome the resolution and throughput of current mask writer for advanced lithography technologies, the platform of e-beam writer have been evolved by the developments of hardware and software in writer. Especially, aggressive optical proximity correction (OPC) for unprecedented extension of optical lithography and the needs of low sensitivity resist for high resolution result in the limit of variable shaped beam writer which is widely used for mass production. The multi-beam mask writer is attractive candidate for photomask writing of sub-10nm device because of its high speed and the large degree of freedom which enable high dose and dose modulation for each pixel. However, the higher dose and almost unlimited appetite for dose modulation challenge the mask data processing (MDP) in aspects of extreme data volume and correction method. Here, we discuss the requirements of mask data processing for multi-beam mask writer and presents new challenges of the data format, data flow, and correction method for user and supplier MDP tool.

Pattern Inspection of EUV Masks Using DUV Light

NASA Astrophysics Data System (ADS)

Liang, Ted; Tejnil, Edita; Stivers, Alan R.

2002-12-01

Inspection of extreme ultraviolet (EUV) lithography masks requires reflected light and this poses special challenges for inspection tool suppliers as well as for mask makers. Inspection must detect all the printable defects in the absorber pattern as well as printable process-related defects. Progress has been made under the NIST ATP project on "Intelligent Mask Inspection Systems for Next Generation Lithography" in assessing the factors that impact the inspection tool sensitivity. We report in this paper the inspection of EUV masks with programmed absorber defects using 257nm light. All the materials of interests for masks are highly absorptive to EUV light as compared to deep ultraviolet (DUV) light. Residues and contamination from mask fabrication process and handling are prone to be printable. Therefore, it is critical to understand their EUV printability and optical inspectability. Process related defects may include residual buffer layer such as oxide, organic contaminants and possible over-etch to the multilayer surface. Both simulation and experimental results will be presented in this paper.

Fabrication of a novel quartz micromachined gyroscope

NASA Astrophysics Data System (ADS)

Xie, Liqiang; Xing, Jianchun; Wang, Haoxu; Wu, Xuezhong

2015-04-01

A novel quartz micromachined gyroscope is proposed in this paper. The novel gyroscope is realized by quartz anisotropic wet etching and 3-dimensional electrodes deposition. In the quartz wet etching process, the quality of Cr/Au mask films affecting the process are studied by experiment. An excellent mask film with 100 Å Cr and 2000 Å Au is achieved by optimization of experimental parameters. Crystal facets after etching seriously affect the following sidewall electrodes deposition process and the structure's mechanical behaviours. Removal of crystal facets is successfully implemented by increasing etching time based on etching rate ratios between facets and crystal planes. In the electrodes deposition process, an aperture mask evaporation method is employed to prepare electrodes on 3-dimensional surfaces of the gyroscope structure. The alignments among the aperture masks are realized by the ABM™ Mask Aligner System. Based on the processes described above, a z-axis quartz gyroscope is fabricated successfully.

Functional neuroanatomy of visual masking deficits in schizophrenia.

PubMed

Green, Michael F; Lee, Junghee; Cohen, Mark S; Engel, Steven A; Korb, Alexander S; Nuechterlein, Keith H; Wynn, Jonathan K; Glahn, David C

2009-12-01

Visual masking procedures assess the earliest stages of visual processing. Patients with schizophrenia reliably show deficits on visual masking, and these procedures have been used to explore vulnerability to schizophrenia, probe underlying neural circuits, and help explain functional outcome. To identify and compare regional brain activity associated with one form of visual masking (ie, backward masking) in schizophrenic patients and healthy controls. Subjects received functional magnetic resonance imaging scans. While in the scanner, subjects performed a backward masking task and were given 3 functional localizer activation scans to identify early visual processing regions of interest (ROIs). University of California, Los Angeles, and the Department of Veterans Affairs Greater Los Angeles Healthcare System. Nineteen patients with schizophrenia and 19 healthy control subjects. Main Outcome Measure The magnitude of the functional magnetic resonance imaging signal during backward masking. Two ROIs (lateral occipital complex [LO] and the human motion selective cortex [hMT+]) showed sensitivity to the effects of masking, meaning that signal in these areas increased as the target became more visible. Patients had lower activation than controls in LO across all levels of visibility but did not differ in other visual processing ROIs. Using whole-brain analyses, we also identified areas outside the ROIs that were sensitive to masking effects (including bilateral inferior parietal lobe and thalamus), but groups did not differ in signal magnitude in these areas. The study results support a key role in LO for visual masking, consistent with previous studies in healthy controls. The current results indicate that patients fail to activate LO to the same extent as controls during visual processing regardless of stimulus visibility, suggesting a neural basis for the visual masking deficit, and possibly other visual integration deficits, in schizophrenia.

X-ray mask fabrication advancements at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-05-01

The Microlithographic Mask Development Center (MMD) was established as the X-ray mask manufacturing facility at the IBM Microelectronics Division semiconductor fabricator in Essex Junction, Vermont. This center, in operation for over two years, produces high yielding, defect-free X-ray masks for competitive logic and memory products at 250nm groundrules and below. The MMD is a complete mask facility that manufactures silicon membrane mask blanks in the NIST format and finished masks with electroplated gold X-ray absorber. Mask patterning, with dimensions as small as 180 nm, is accomplished using IBM-built variable shaped spot e-beam systems. Masks are routinely inspected and repaired using state-of-the-art equipment: two KLA SEM Specs for defect inspection, a Leica LMS 2000 for image placement characterization, an Amray 2040c for image dimension characterization and a Micrion 8000 XMR for defect repair. This facility maintains a baseline mask process with daily production of 250nm, 32Mb SRAM line monitor masks for the continuous improvement of mask quality and processes. Development masks are produced for several semiconductor manufacturers including IBM, Motorola, Loral, and Sanders. Masks for 64Mb and 256Mb DRAM (IBM) and advanced logic/SRAM (IBM and Motorola) designs have also been delivered. This paper describes the MMD facility and its technical capabilities. Key manufacturing metrics such as mask turnaround time, parametric yield learning and defect reduction activities are highlighted. The challenges associated with improved mask quality, sub-180nm mask fabrication, and the transition to refractory metal absorber are discussed.

Optical proximity correction for anamorphic extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Clifford, Chris; Lam, Michael; Raghunathan, Ananthan; Jiang, Fan; Fenger, Germain; Adam, Kostas

2017-10-01

The change from isomorphic to anamorphic optics in high numerical aperture (NA) extreme ultraviolet (EUV) scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated, and verified by rigorous simulation. Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking (MRC). OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs which are more tolerant to mask errors.

Reinforced Masks for Ion Plating of Solar Cells

NASA Technical Reports Server (NTRS)

Conley, W. R.; Swick, E. G.; Volkers, J. C.

1987-01-01

Proposed mask for ion plating of surface electrodes on silicon solar cells reinforced to hold shape better during handling. Fabrication process for improved mask similar to conventional mask. Additional cuts and bends made in wide diametral strip to form bridges between pairs of mask fingers facing each other across this strip. Bridges high enough not to act as masks so entire strip area plated.

Full-chip level MEEF analysis using model based lithography verification

NASA Astrophysics Data System (ADS)

Kim, Juhwan; Wang, Lantian; Zhang, Daniel; Tang, Zongwu

2005-11-01

MEEF (Mask Error Enhancement Factor) has become a critical factor in CD uniformity control since optical lithography process moved to sub-resolution era. A lot of studies have been done by quantifying the impact of the mask CD (Critical Dimension) errors on the wafer CD errors1-2. However, the benefits from those studies were restricted only to small pattern areas of the full-chip data due to long simulation time. As fast turn around time can be achieved for the complicated verifications on very large data by linearly scalable distributed processing technology, model-based lithography verification becomes feasible for various types of applications such as post mask synthesis data sign off for mask tape out in production and lithography process development with full-chip data3,4,5. In this study, we introduced two useful methodologies for the full-chip level verification of mask error impact on wafer lithography patterning process. One methodology is to check MEEF distribution in addition to CD distribution through process window, which can be used for RET/OPC optimization at R&D stage. The other is to check mask error sensitivity on potential pinch and bridge hotspots through lithography process variation, where the outputs can be passed on to Mask CD metrology to add CD measurements on those hotspot locations. Two different OPC data were compared using the two methodologies in this study.

Strategy optimization for mask rule check in wafer fab

NASA Astrophysics Data System (ADS)

Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

2015-07-01

Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

Manufacturability study of masks created by inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Martin, Patrick M.; Progler, C. J.; Xiao, G.; Gray, R.; Pang, L.; Liu, Y.

2005-11-01

As photolithography is pushed to fabricate deep-sub wavelength devices for 90nm, 65nm and smaller technology nodes using available exposure tools (i.e., 248nm, 193nm steppers), photomask capability is becoming extremely critical. For example, PSM masks require more complicated processing; aggressive OPC makes the writing time longer and sometimes unpredictable; and, high MEEF imposes much more stringent demands on mask quality. Therefore, in order for any new lithography technology to be adopted into production, mask manufacturability must be studied thoroughly and carefully. In this paper we will present the mask manufacturability study on mask patterns created using Inverse Lithography Technology (ILT). Unlike conventional OPC methodologies, ILT uses a unique outcome-based technology to mathematically determine the mask features that produce the desired on-wafer results. ILT solves the most critical litho challenges of the deep sub-wavelength era. Potential benefits include: higher yield; expanded litho process windows; superb pattern fidelity at 90, 65 & 45-nm nodes; and reduced time-to-silicon - all without changing the existing lithography infrastructure and design-to-silicon flow. In this study a number of cell structures were selected and used as test patterns. "Luminized patterns" were generated for binary mask and attenuated phase-shift mask. Both conventional OPC patterns and "luminized patterns" were put on a test reticle side by side, and they all have a number of variations in term of correction aggressivity level and mask complexity. Mask manufacturability, including data fracturing, writing time, mask inspection, and metrology were studied. The results demonstrate that, by optimizing the inspection recipe, masks created using ILT technology can be made and qualified using current processes with a reasonable turn-around time.

SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

NASA Astrophysics Data System (ADS)

Antohe, Alin O.; Balachandran, Dave; He, Long; Kearney, Patrick; Karumuri, Anil; Goodwin, Frank; Cummings, Kevin

2015-03-01

Availability of defect-free reflective mask has been one of the most critical challenges to extreme ultraviolet lithography (EUVL). To mitigate the risk, significant progress has been made on defect detection, pattern shifting, and defect repair. Clearly such mitigation strategies are based on the assumption that defect counts and sizes from incoming mask blanks must be below practical levels depending on mask specifics. The leading industry consensus for early mask product development is that there should be no defects greater than 80 nm in the quality area, 132 mm x 132 mm. In addition less than 10 defects smaller than 80 nm may be mitigable. SEMATECH has been focused on EUV mask blank defect reduction using Veeco Nexus TM IBD platform, the industry standard for mask blank production, and assessing if IBD technology can be evolved to a manufacturing solution. SEMATECH has recently announced a breakthrough reduction of defects in the mask blank deposition process resulting in the production of two defect-free EUV mask blanks at 54 nm inspection sensitivity (SiO2 equivalent). This paper will discuss the dramatic reduction of baseline EUV mask blank defects, review the current deposition process run and compare results with previous process runs. Likely causes of remaining defects will be discussed based on analyses as characterized by their compositions and whether defects are embedded in the multilayer stack or non-embedded.

Machine learning for inverse lithography: using stochastic gradient descent for robust photomask synthesis

NASA Astrophysics Data System (ADS)

Jia, Ningning; Y Lam, Edmund

2010-04-01

Inverse lithography technology (ILT) synthesizes photomasks by solving an inverse imaging problem through optimization of an appropriate functional. Much effort on ILT is dedicated to deriving superior masks at a nominal process condition. However, the lower k1 factor causes the mask to be more sensitive to process variations. Robustness to major process variations, such as focus and dose variations, is desired. In this paper, we consider the focus variation as a stochastic variable, and treat the mask design as a machine learning problem. The stochastic gradient descent approach, which is a useful tool in machine learning, is adopted to train the mask design. Compared with previous work, simulation shows that the proposed algorithm is effective in producing robust masks.

Brightness masking is modulated by disparity structure.

PubMed

Pelekanos, Vassilis; Ban, Hiroshi; Welchman, Andrew E

2015-05-01

The luminance contrast at the borders of a surface strongly influences surface's apparent brightness, as demonstrated by a number of classic visual illusions. Such phenomena are compatible with a propagation mechanism believed to spread contrast information from borders to the interior. This process is disrupted by masking, where the perceived brightness of a target is reduced by the brief presentation of a mask (Paradiso & Nakayama, 1991), but the exact visual stage that this happens remains unclear. In the present study, we examined whether brightness masking occurs at a monocular-, or a binocular-level of the visual hierarchy. We used backward masking, whereby a briefly presented target stimulus is disrupted by a mask coming soon afterwards, to show that brightness masking is affected by binocular stages of the visual processing. We manipulated the 3-D configurations (slant direction) of the target and mask and measured the differential disruption that masking causes on brightness estimation. We found that the masking effect was weaker when stimuli had a different slant. We suggest that brightness masking is partly mediated by mid-level neuronal mechanisms, at a stage where binocular disparity edge structure has been extracted. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Interferometric surface mapping with variable sensitivity.

PubMed

Jaerisch, W; Makosch, G

1978-03-01

In the photolithographic process, presently employed for the production of integrated circuits, sets of correlated masks are used for exposing the photoresist on silicon wafers. Various sets of masks which are printed in different printing tools must be aligned correctly with respect to the structures produced on the wafer in previous process steps. Even when perfect alignment is considered, displacements and distortions of the printed wafer patterns occur. They are caused by imperfections of the printing tools or/and wafer deformations resulting from high temperature processes. Since the electrical properties of the final integrated circuits and therefore the manufacturing yield depend to a great extent on the precision at which such patterns are superimposed, simple and fast overlay measurements and flatness measurements as well are very important in IC-manufacturing. A simple optical interference method for flatness measurements will be described which can be used under manufacturing conditions. This method permits testing of surface height variations by nearly grazing light incidence by absence of a physical reference plane. It can be applied to polished surfaces and rough surfaces as well.

Masking Level Difference Response Norms from Learning Disabled Individuals.

ERIC Educational Resources Information Center

Waryas, Paul A.; Battin, R. Ray

1985-01-01

The study presents normative data on Masking Level Difference (an improvement of the auditory processing of interaural time/intensity differences between signals and masking noises) for 90 learning disabled persons (4-35 years old). It was concluded that the MLD may quickly screen for auditory processing problems. (CL)

Masked Speech Recognition and Reading Ability in School-Age Children: Is There a Relationship?

ERIC Educational Resources Information Center

Miller, Gabrielle; Lewis, Barbara; Benchek, Penelope; Buss, Emily; Calandruccio, Lauren

2018-01-01

Purpose: The relationship between reading (decoding) skills, phonological processing abilities, and masked speech recognition in typically developing children was explored. This experiment was designed to evaluate the relationship between phonological processing and decoding abilities and 2 aspects of masked speech recognition in typically…

High-emulation mask recognition with high-resolution hyperspectral video capture system

NASA Astrophysics Data System (ADS)

Feng, Jiao; Fang, Xiaojing; Li, Shoufeng; Wang, Yongjin

2014-11-01

We present a method for distinguishing human face from high-emulation mask, which is increasingly used by criminals for activities such as stealing card numbers and passwords on ATM. Traditional facial recognition technique is difficult to detect such camouflaged criminals. In this paper, we use the high-resolution hyperspectral video capture system to detect high-emulation mask. A RGB camera is used for traditional facial recognition. A prism and a gray scale camera are used to capture spectral information of the observed face. Experiments show that mask made of silica gel has different spectral reflectance compared with the human skin. As multispectral image offers additional spectral information about physical characteristics, high-emulation mask can be easily recognized.

Dose masking feature for BNCT radiotherapy planning

DOEpatents

Cook, Jeremy L.; Wessol, Daniel E.; Wheeler, Floyd J.

2000-01-01

A system for displaying an accurate model of isodoses to be used in radiotherapy so that appropriate planning can be performed prior to actual treatment on a patient. The nature of the simulation of the radiotherapy planning for BNCT and Fast Neutron Therapy, etc., requires that the doses be computed in the entire volume. The "entire volume" includes the patient and beam geometries as well as the air spaces in between. Isodoses derived from the computed doses will therefore extend into the air regions between the patient and beam geometries and thus depict the unrealistic possibility that radiation deposition occurs in regions containing no physical media. This problem is solved by computing the doses for the entire geometry and then masking the physical and air regions along with the isodose contours superimposed over the patient image at the corresponding plane. The user is thus able to mask out (remove) the contour lines from the unwanted areas of the image by selecting the appropriate contour masking region from the raster image.

Visual Masking in Schizophrenia: Overview and Theoretical Implications

PubMed Central

Green, Michael F.; Lee, Junghee; Wynn, Jonathan K.; Mathis, Kristopher I.

2011-01-01

Visual masking provides several key advantages for exploring the earliest stages of visual processing in schizophrenia: it allows for control over timing at the millisecond level, there are several well-supported theories of the underlying neurobiology of visual masking, and it is amenable to examination by electroencephalogram (EEG) and functional magnetic resonance imaging (fMRI). In this paper, we provide an overview of the visual masking impairment schizophrenia, including the relevant theoretical mechanisms for masking impairment. We will discuss its relationship to clinical symptoms, antipsychotic medications, diagnostic specificity, and presence in at-risk populations. As part of this overview, we will cover the neural correlates of visual masking based on recent findings from EEG and fMRI. Finally, we will suggest a possible mechanism that could explain the patterns of masking findings and other visual processing findings in schizophrenia. PMID:21606322

Single closed contact for 0.18-micron photolithography process

NASA Astrophysics Data System (ADS)

Cheung, Cristina; Phan, Khoi A.; Chiu, Robert J.

2000-06-01

With the rapid advances of deep submicron semiconductor technology, identifying defects is converted into a challenge for different modules in the fabrication of chips. Yield engineers often do bitmap on a memory circuit array (SRAM) to identify the failure bits. This is followed by a wafer stripback to look for visual defects at each deprocessed layer for feedback to the Fab. However, to identify the root cause of a problem, Fab engineers must be able to detect similar defects either on the product wafers in process or some short loop test wafers. In the photolithography process, we recognize that the detection of defects is becoming as important as satisfying the critical dimension (CD) of the device. For a multi-level metallization chemically mechanical polish backend process, it is very difficult to detect missing contacts or via at the masking steps due to metal grain roughness, film color variation and/or previous layer defects. Often, photolithography engineer must depend on Photo Cell Monitor (PCM) and short loop experiments for controlling baseline defects and improvement. In this paper, we discuss the findings on the Poly mask PCM and the Contact mask PCM. We present the comparison between the Poly mask and the Contact mask of the I-line Phase Shifted Via mask and DUV mask process for a 0.18 micron process technology. The correlation and the different type of defects between the Contact PCM and the Poly Mask are discussed. The Contact PCM was found to be more sensitive and correlated to contact failure at sort yield better. We also dedicate to study the root cause of a single closed contact hole in the Contact mask short loop experiment for a 0.18 micron process technology. A single closed contact defect was often caused by the developer process, such as bubbles in the line, resist residue left behind, and the rinse mechanism. We also found surfactant solution helps to improve the surface tension of the wafer for the developer process and this prevents/eliminates a single closed contact hole defects. The applications and effects of using different substrates like SiON, different thicknesses of Oxides, and Poly in the Contact Photo Mask is shown. Finally, some defect troubleshooting techniques and the root cause analysis are also discussed.

Application of advanced structure to multi-tone mask for FPD process

NASA Astrophysics Data System (ADS)

Song, Jin-Han; Jeong, Jin-Woong; Kim, Kyu-Sik; Jeong, Woo-Gun; Yun, Sang-Pil; Lee, Dong-Heok; Choi, Sang-Soo

2017-07-01

In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial advantage which enables to reduce the number of mask demand in FPD fabrication process contrast to normal mask of two-tone transmittance.[1,2] A chromium (Cr)-based MTM (Typically top type) is being widely employed because of convenience of etch process caused by its only Cr-based structure consisted of Cr absorber layer and Cr half-tone layer. However, the top type of Cr-based MTM demands two Cr sputtering processes after each layer etching process and writing process. For this reason, a different material from the Cr-based MTM is required for reduction of mask fabrication time and cost. In this study, we evaluate a MTM which has a structure combined Cr with molybdenum silicide (MoSi) to resolve the issues mentioned above. The MoSi which is demonstrated by integrated circuit (IC) process is a suitable material for MTM evaluation. This structure could realize multi-transmittance in common with the Cr-based MTM. Moreover, it enables to reduce the number of sputtering process. We investigate a optimized structure upon consideration of productivity along with performance such as critical dimension (CD) variation and transmittance range of each structure. The transmittance is targeted at h-line wavelength (405 nm) in the evaluation. Compared with Cr-based MTM, the performances of all Cr-/MoSi-based MTMs are considered.

Influence of face mask design on bag-valve-mask ventilation performance: a randomized simulation study.

PubMed

Na, J U; Han, S K; Choi, P C; Cho, J H; Shin, D H

2013-10-01

Different face mask designs can influence bag-valve-mask (BVM) ventilation performance during resuscitation. We compared a single-use, air-cushioned face mask (AM) with a reusable silicone face mask (SM) for quality of BVM ventilation on a manikin simulating cardiac arrest. Thirty-two physicians were recruited, and a prospective, randomized, crossover observational study was conducted after an American Heart Association-accredited basic life support provider course and standardized practice time were completed. Participants performed 12 cycles of BVM ventilation with both the AM and SM on a SmartMan lung simulator. Mean tidal volume was significantly higher in ventilations performed using the AM vs. the SM (548 ± 159 ml vs. 439 ± 163 ml, P < 0.01). In addition, the proportion of low-volume ventilation was significantly lower with the AM than the SM [6/12 (2-11) vs. 9/12 (5-12), P = 0.03]. Bag-valve-AM ventilation volume was not affected by the physical characteristics of the rescuers, except for sex. In contrast, bag-valve-SM ventilation volume was affected by most of the characteristics tested, including sex, height, weight, hand width, hand length, and grip power. The AM seems to be a more efficient face mask than the SM at delivering sufficient ventilation volumes. The performance of the AM did not seem to be associated with the physical characteristics of the rescuers, whereas that of the SM was affected by these factors. The SM may not be an appropriate face mask for performing one-person BVM ventilation during resuscitation for rescuers who are smaller in stature, have a smaller hand size, or have weaker grip power. © 2013 The Acta Anaesthesiologica Scandinavica Foundation. Published by John Wiley & Sons Ltd.

Quartz 9-inch size mask blanks for ArF PSM (Phase Shift Mask)

NASA Astrophysics Data System (ADS)

Harashima, Noriyuki; Isozaki, Tatsuya; Kawanishi, Arata; Kanai, Shuichiro; Kageyama, Kagehiro; Iso, Hiroyuki; Chishima, Tatsuya

2017-07-01

Semiconductor technology nodes are steadily miniaturizing. On the other hand, various efforts have been made to reduce costs, mass production lines have shifted from 200 mmφ of Si wafer to 300 mmφ, and technology development of Si wafer 450 mmφ is also in progress. As a photomask, 6-inch size binary Cr mask has been used for many years, but in recent years, the use of 9-inch binary Cr masks for Proximity Lithography Process in automotive applications, MEMS, packages, etc. has increased, and cost reduction has been taken. Since the miniaturization will progress in the above applications in the future, products corresponding to miniaturization are also desired in 9-inch photomasks. The high grade Cr - binary mask blanks used in proximity exposure process, there is a prospect of being able to use it by ULVAC COATING CORPORATION's tireless research. As further demands for miniaturization, KrF and ArF Lithography Process, which are used for steppers and scanners , there are also a demand for 9-inch size Mask Blanks. In ULVAC COATING CORPORATION, we developed a 9 - inch size KrF PSM mask Blanks prototype in 2016 and proposed a new high grade 9 - inch photomask. This time, we have further investigated and developed 9-inch size ArF PSM Mask Blanks corresponding to ArF Lithography Process, so we report it.

Perceptual learning for speech in noise after application of binary time-frequency masks

PubMed Central

Ahmadi, Mahnaz; Gross, Vauna L.; Sinex, Donal G.

2013-01-01

Ideal time-frequency (TF) masks can reject noise and improve the recognition of speech-noise mixtures. An ideal TF mask is constructed with prior knowledge of the target speech signal. The intelligibility of a processed speech-noise mixture depends upon the threshold criterion used to define the TF mask. The study reported here assessed the effect of training on the recognition of speech in noise after processing by ideal TF masks that did not restore perfect speech intelligibility. Two groups of listeners with normal hearing listened to speech-noise mixtures processed by TF masks calculated with different threshold criteria. For each group, a threshold criterion that initially produced word recognition scores between 0.56–0.69 was chosen for training. Listeners practiced with one set of TF-masked sentences until their word recognition performance approached asymptote. Perceptual learning was quantified by comparing word-recognition scores in the first and last training sessions. Word recognition scores improved with practice for all listeners with the greatest improvement observed for the same materials used in training. PMID:23464038

Shadows alter facial expressions of Noh masks.

PubMed

Kawai, Nobuyuki; Miyata, Hiromitsu; Nishimura, Ritsuko; Okanoya, Kazuo

2013-01-01

A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers' recognition of the emotional expressions. In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa's smile. They also agree with the aesthetic principle of Japanese traditional art "yugen (profound grace and subtlety)", which highly appreciates subtle emotional expressions in the darkness.

Cerebral Asymmetries in Early Orthographic and Phonological Reading Processes: Evidence from Backward Masking

ERIC Educational Resources Information Center

Halderman, Laura K.; Chiarello, Christine

2005-01-01

A lateralized backward masking paradigm was used to examine hemisphere differences in orthographic and phonological processes at an early time course of word recognition. Targets (e.g., bowl) were presented and backward masked by either pseudohomophones of the target word (orthographically and phonologically similar, e.g., BOAL), orthographically…

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Lithographic process window optimization for mask aligner proximity lithography

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna; Erdmann, Andreas; Ünal, Nezih; Hofmann, Ulrich; Hennemeyer, Marc; Zoberbier, Ralph; Nguyen, David; Brugger, Juergen

2014-03-01

We introduce a complete methodology for process window optimization in proximity mask aligner lithography. The commercially available lithography simulation software LAB from GenISys GmbH was used for simulation of light propagation and 3D resist development. The methodology was tested for the practical example of lines and spaces, 5 micron half-pitch, printed in a 1 micron thick layer of AZ® 1512HS1 positive photoresist on a silicon wafer. A SUSS MicroTec MA8 mask aligner, equipped with MO Exposure Optics® was used in simulation and experiment. MO Exposure Optics® is the latest generation of illumination systems for mask aligners. MO Exposure Optics® provides telecentric illumination and excellent light uniformity over the full mask field. MO Exposure Optics® allows the lithography engineer to freely shape the angular spectrum of the illumination light (customized illumination), which is a mandatory requirement for process window optimization. Three different illumination settings have been tested for 0 to 100 micron proximity gap. The results obtained prove, that the introduced process window methodology is a major step forward to obtain more robust processes in mask aligner lithography. The most remarkable outcome of the presented study is that a smaller exposure gap does not automatically lead to better print results in proximity lithography - what the "good instinct" of a lithographer would expect. With more than 5'000 mask aligners installed in research and industry worldwide, the proposed process window methodology might have significant impact on yield improvement and cost saving in industry.

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Integration of mask and silicon metrology in DFM

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

2009-03-01

We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based on the profiling method of the field proven CD metrology algorithm. The detected edges are then converted to GDSII format, which is a standard format for a design data, and utilized for various DFM systems such as simulation. Namely, by integrating pattern shapes of mask and silicon formed during a manufacturing process into GDSII format, it makes it possible to bridge highly accurate pattern profile information over to the design field of various EDA systems. These are fully integrated into design data and automated. Bi-directional cross probing between mask data and process control data is allowed by linking them. This method is a solution for total optimization that covers Design, MDP, mask production and silicon device producing. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

Validation of optical codes based on 3D nanostructures

NASA Astrophysics Data System (ADS)

Carnicer, Artur; Javidi, Bahram

2017-05-01

Image information encoding using random phase masks produce speckle-like noise distributions when the sample is propagated in the Fresnel domain. As a result, information cannot be accessed by simple visual inspection. Phase masks can be easily implemented in practice by attaching cello-tape to the plain-text message. Conventional 2D-phase masks can be generalized to 3D by combining glass and diffusers resulting in a more complex, physical unclonable function. In this communication, we model the behavior of a 3D phase mask using a simple approach: light is propagated trough glass using the angular spectrum of plane waves whereas the diffusor is described as a random phase mask and a blurring effect on the amplitude of the propagated wave. Using different designs for the 3D phase mask and multiple samples, we demonstrate that classification is possible using the k-nearest neighbors and random forests machine learning algorithms.

Masking Strategies for Image Manifolds.

PubMed

Dadkhahi, Hamid; Duarte, Marco F

2016-07-07

We consider the problem of selecting an optimal mask for an image manifold, i.e., choosing a subset of the pixels of the image that preserves the manifold's geometric structure present in the original data. Such masking implements a form of compressive sensing through emerging imaging sensor platforms for which the power expense grows with the number of pixels acquired. Our goal is for the manifold learned from masked images to resemble its full image counterpart as closely as possible. More precisely, we show that one can indeed accurately learn an image manifold without having to consider a large majority of the image pixels. In doing so, we consider two masking methods that preserve the local and global geometric structure of the manifold, respectively. In each case, the process of finding the optimal masking pattern can be cast as a binary integer program, which is computationally expensive but can be approximated by a fast greedy algorithm. Numerical experiments show that the relevant manifold structure is preserved through the datadependent masking process, even for modest mask sizes.

The automatic back-check mechanism of mask tooling database and automatic transmission of mask tooling data

NASA Astrophysics Data System (ADS)

Xu, Zhe; Peng, M. G.; Tu, Lin Hsin; Lee, Cedric; Lin, J. K.; Jan, Jian Feng; Yin, Alb; Wang, Pei

2006-10-01

Nowadays, most foundries have paid more and more attention in order to reduce the CD width. Although the lithography technologies have developed drastically, mask data accuracy is still a big challenge than before. Besides, mask (reticle) price also goes up drastically such that data accuracy needs more special treatments.We've developed a system called eFDMS to guarantee the mask data accuracy. EFDMS is developed to do the automatic back-check of mask tooling database and the data transmission of mask tooling. We integrate our own EFDMS systems to engage with the standard mask tooling system K2 so that the upriver and the downriver processes of the mask tooling main body K2 can perform smoothly and correctly with anticipation. The competition in IC marketplace is changing from high-tech process to lower-price gradually. How to control the reduction of the products' cost more plays a significant role in foundries. Before the violent competition's drawing nearer, we should prepare the cost task ahead of time.

Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method

NASA Astrophysics Data System (ADS)

Shao, Feng; Evanschitzky, Peter; Fühner, Tim; Erdmann, Andreas

2009-10-01

This paper employs the Waveguide decomposition method as an efficient rigorous electromagnetic field (EMF) solver to investigate three dimensional mask-induced imaging artifacts in EUV lithography. The major mask diffraction induced imaging artifacts are first identified by applying the Zernike analysis of the mask nearfield spectrum of 2D lines/spaces. Three dimensional mask features like 22nm semidense/dense contacts/posts, isolated elbows and line-ends are then investigated in terms of lithographic results. After that, the 3D mask-induced imaging artifacts such as feature orientation dependent best focus shift, process window asymmetries, and other aberration-like phenomena are explored for the studied mask features. The simulation results can help lithographers to understand the reasons of EUV-specific imaging artifacts and to devise illumination and feature dependent strategies for their compensation in the optical proximity correction (OPC) for EUV masks. At last, an efficient approach using the Zernike analysis together with the Waveguide decomposition technique is proposed to characterize the impact of mask properties for the future OPC process.

Real time validation of GPS TEC precursor mask for Greece

NASA Astrophysics Data System (ADS)

Pulinets, Sergey; Davidenko, Dmitry

2013-04-01

It was established by earlier studies of pre-earthquake ionospheric variations that for every specific site these variations manifest definite stability in their temporal behavior within the time interval few days before the seismic shock. This self-similarity (characteristic to phenomena registered for processes observed close to critical point of the system) permits us to consider these variations as a good candidate to short-term precursor. Physical mechanism of GPS TEC variations before earthquakes is developed within the framework of Lithosphere-Atmosphere-Ionosphere Coupling (LAIC) model. Taking into account the different tectonic structure and different source mechanisms of earthquakes in different regions of the globe, every site has its individual behavior in pre-earthquake activity what creates individual "imprint" on the ionosphere behavior at every given point. Just this so called "mask" of the ionosphere variability before earthquake in the given point creates opportunity to detect anomalous behavior of electron concentration in ionosphere basing not only on statistical processing procedure but applying the pattern recognition technique what facilitates the automatic recognition of short-term ionospheric precursors of earthquakes. Such kind of precursor mask was created using the GPS TEC variation around the time of 9 earthquakes with magnitude from M6.0 till M6.9 which took place in Greece within the time interval 2006-2011. The major anomaly revealed in the relative deviation of the vertical TEC was the positive anomaly appearing at ~04PM UT one day before the seismic shock and lasting nearly 12 hours till ~04AM UT. To validate this approach it was decided to check the mask in real-time monitoring of earthquakes in Greece starting from the 1 of December 2012 for the earthquakes with magnitude more than 4.5. During this period (till 9 of January 2013) 4 cases of seismic shocks were registered, including the largest one M5.7 on 8 of January. For all of them the mask confirmed its validity and 6 of December event was predicted in advance.

A mask quality control tool for the OSIRIS multi-object spectrograph

NASA Astrophysics Data System (ADS)

López-Ruiz, J. C.; Vaz Cedillo, Jacinto Javier; Ederoclite, Alessandro; Bongiovanni, Ángel; González Escalera, Víctor

2012-09-01

OSIRIS multi object spectrograph uses a set of user-customised-masks, which are manufactured on-demand. The manufacturing process consists of drilling the specified slits on the mask with the required accuracy. Ensuring that slits are on the right place when observing is of vital importance. We present a tool for checking the quality of the process of manufacturing the masks which is based on analyzing the instrument images obtained with the manufactured masks on place. The tool extracts the slit information from these images, relates specifications with the extracted slit information, and finally communicates to the operator if the manufactured mask fulfills the expectations of the mask designer. The proposed tool has been built using scripting languages and using standard libraries such as opencv, pyraf and scipy. The software architecture, advantages and limits of this tool in the lifecycle of a multiobject acquisition are presented.

FPGA chip performance improvement with gate shrink through alternating PSM 90nm process

NASA Astrophysics Data System (ADS)

Yu, Chun-Chi; Shieh, Ming-Feng; Liu, Erick; Lin, Benjamin; Ho, Jonathan; Wu, Xin; Panaite, Petrisor; Chacko, Manoj; Zhang, Yunqiang; Lei, Wen-Kang

2005-11-01

In the post-physical verification space called 'Mask Synthesis' a key component of design-for-manufacturing (DFM), double-exposure based, dark-field, alternating PSM (Alt-PSM) is being increasingly applied at the 90nm node in addition with other mature resolution enhancement techniques (RETs) such as optical proximity correction (OPC) and sub-resolution assist features (SRAF). Several high-performance IC manufacturers already use alt-PSM technology in 65nm production. At 90nm having strong control over the lithography process is a critical component in meeting targeted yield goals. However, implementing alt-PSM in production has been challenging due to several factors such as phase conflict errors, mask manufacturing, and the increased production cost due to the need for two masks in the process. Implementation of Alt-PSM generally requires phase compliance rules and proper phase topology in the layout and this has been successful for the technology node with these rules implemented. However, this may not be true for a mature, production process technology, in this case 90 nm. Especially, in the foundry-fabless business model where the foundry provides a standard set of design rules to its customers for a given process technology, and where not all the foundry customers require Alt-PSM in their tapeout flow. With minimum design changes, design houses usually are motivated by higher product performance for the existing designs. What follows is an in-depth review of the motivation to apply alt-PSM on a production FPGA, the DFM challenges to each partner faced, its effect on the tapeout flow, and how design, manufacturing, and EDA teams worked together to resolve phase conflicts, tapeout the chip, and finally verify the silicon results in production.

Antigen Masking During Fixation and Embedding, Dissected

PubMed Central

Scalia, Carla Rossana; Boi, Giovanna; Bolognesi, Maddalena Maria; Riva, Lorella; Manzoni, Marco; DeSmedt, Linde; Bosisio, Francesca Maria; Ronchi, Susanna; Leone, Biagio Eugenio; Cattoretti, Giorgio

2016-01-01

Antigen masking in routinely processed tissue is a poorly understood process caused by multiple factors. We sought to dissect the effect on antigenicity of each step of processing by using frozen sections as proxies of the whole tissue. An equivalent extent of antigen masking occurs across variable fixation times at room temperature. Most antigens benefit from longer fixation times (>24 hr) for optimal detection after antigen retrieval (AR; for example, Ki-67, bcl-2, ER). The transfer to a graded alcohol series results in an enhanced staining effect, reproduced by treating the sections with detergents, possibly because of a better access of the polymeric immunohistochemical detection system to tissue structures. A second round of masking occurs upon entering the clearing agent, mostly at the paraffin embedding step. This may depend on the non-freezable water removal. AR fully reverses the masking due both to the fixation time and the paraffin embedding. AR itself destroys some epitopes which do not survive routine processing. Processed frozen sections are a tool to investigate fixation and processing requirements for antigens in routine specimens. PMID:27798289

2013 mask industry survey

NASA Astrophysics Data System (ADS)

Malloy, Matt

2013-09-01

A comprehensive survey was sent to merchant and captive mask shops to gather information about the mask industry as an objective assessment of its overall condition. 2013 marks the 12th consecutive year for this process. Historical topics including general mask profile, mask processing, data and write time, yield and yield loss, delivery times, maintenance, and returns were included and new topics were added. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. While each year's survey includes minor updates based on feedback from past years and the need to collect additional data on key topics, the bulk of the survey and reporting structure have remained relatively constant. A series of improvements is being phased in beginning in 2013 to add value to a wider audience, while at the same time retaining the historical content required for trend analyses of the traditional metrics. Additions in 2013 include topics such as top challenges, future concerns, and additional details in key aspects of mask masking, such as the number of masks per mask set per ground rule, minimum mask resolution shipped, and yield by ground rule. These expansions beyond the historical topics are aimed at identifying common issues, gaps, and needs. They will also provide a better understanding of real-life mask requirements and capabilities for comparison to the International Technology Roadmap for Semiconductors (ITRS).

Intact figure-ground segmentation in schizophrenia.

PubMed

Herzog, Michael H; Kopmann, Sabine; Brand, Andreas

2004-11-30

As revealed by backward masking studies, schizophrenic patients show strong impairments of early visual processing. However, the underlying temporal mechanisms are not yet well understood. To shed light on the exact timing of these deficits, we employed a paradigm in which two masks follow each other. We investigated 16 medicated schizophrenic patients and a matched group of 14 controls with a new backward masking technique, shine-through. In accordance with other masking studies, schizophrenic patients require a dramatically longer processing time to reach a predefined performance level compared with healthy subjects. However, patients are surprisingly sensitive to subtle differences in the timing of the two masks, revealing good temporal resolution. This good temporal resolution indicates intact and fast perceptual grouping and figure-ground segmentation in spite of high susceptibility to masking procedures in schizophrenia.

Edge-illumination x-ray phase contrast imaging with Pt-based metallic glass masks

NASA Astrophysics Data System (ADS)

Saghamanesh, Somayeh; Aghamiri, Seyed Mahmoud-Reza; Olivo, Alessandro; Sadeghilarijani, Maryam; Kato, Hidemi; Kamali-Asl, Alireza; Yashiro, Wataru

2017-06-01

Edge-illumination x-ray phase contrast imaging (EI XPCI) is a non-interferometric phase-sensitive method where two absorption masks are employed. These masks are fabricated through a photolithography process followed by electroplating which is challenging in terms of yield as well as time- and cost-effectiveness. We report on the first implementation of EI XPCI with Pt-based metallic glass masks fabricated by an imprinting method. The new tested alloy exhibits good characteristics including high workability beside high x-ray attenuation. The fabrication process is easy and cheap, and can produce large-size masks for high x-ray energies within minutes. Imaging experiments show a good quality phase image, which confirms the potential of these masks to make the EI XPCI technique widely available and affordable.

Task-Dependent Masked Priming Effects in Visual Word Recognition

PubMed Central

Kinoshita, Sachiko; Norris, Dennis

2012-01-01

A method used widely to study the first 250 ms of visual word recognition is masked priming: These studies have yielded a rich set of data concerning the processes involved in recognizing letters and words. In these studies, there is an implicit assumption that the early processes in word recognition tapped by masked priming are automatic, and masked priming effects should therefore be invariant across tasks. Contrary to this assumption, masked priming effects are modulated by the task goal: For example, only word targets show priming in the lexical decision task, but both words and non-words do in the same-different task; semantic priming effects are generally weak in the lexical decision task but are robust in the semantic categorization task. We explain how such task dependence arises within the Bayesian Reader account of masked priming (Norris and Kinoshita, 2008), and how the task dissociations can be used to understand the early processes in lexical access. PMID:22675316

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Masking reduces orientation selectivity in rat visual cortex

PubMed Central

Alwis, Dasuni S.; Richards, Katrina L.

2016-01-01

In visual masking the perception of a target stimulus is impaired by a preceding (forward) or succeeding (backward) mask stimulus. The illusion is of interest because it allows uncoupling of the physical stimulus, its neuronal representation, and its perception. To understand the neuronal correlates of masking, we examined how masks affected the neuronal responses to oriented target stimuli in the primary visual cortex (V1) of anesthetized rats (n = 37). Target stimuli were circular gratings with 12 orientations; mask stimuli were plaids created as a binarized sum of all possible target orientations. Spatially, masks were presented either overlapping or surrounding the target. Temporally, targets and masks were presented for 33 ms, but the stimulus onset asynchrony (SOA) of their relative appearance was varied. For the first time, we examine how spatially overlapping and center-surround masking affect orientation discriminability (rather than visibility) in V1. Regardless of the spatial or temporal arrangement of stimuli, the greatest reductions in firing rate and orientation selectivity occurred for the shortest SOAs. Interestingly, analyses conducted separately for transient and sustained target response components showed that changes in orientation selectivity do not always coincide with changes in firing rate. Given the near-instantaneous reductions observed in orientation selectivity even when target and mask do not spatially overlap, we suggest that monotonic visual masking is explained by a combination of neural integration and lateral inhibition. PMID:27535373

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

PubMed

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

Model-based assist feature insertion for sub-40nm memory device

NASA Astrophysics Data System (ADS)

Suh, Sungsoo; Lee, Suk-joo; Choi, Seong-woon; Lee, Sung-Woo; Park, Chan-hoon

2009-04-01

Many issues need to be resolved for a production-worthy model based assist feature insertion flow for single and double exposure patterning process to extend low k1 process at 193 nm immersion technology. Model based assist feature insertion is not trivial to implement either for single and double exposure patterning compared to rule based methods. As shown in Fig. 1, pixel based mask inversion technology in itself has difficulties in mask writing and inspection although it presents as one of key technology to extend single exposure for contact layer. Thus far, inversion technology is tried as a cooptimization of target mask to simultaneously generate optimized main and sub-resolution assists features for a desired process window. Alternatively, its technology can also be used to optimize for a target feature after an assist feature types are inserted in order to simplify the mask complexity. Simplification of inversion mask is one of major issue with applying inversion technology to device development even if a smaller mask feature can be fabricated since the mask writing time is also a major factor. As shown in Figure 2, mask writing time may be a limiting factor in determining whether or not an inversion solution is viable. It can be reasoned that increased number of shot counts relates to increase in margin for inversion methodology. On the other hand, there is a limit on how complex a mask can be in order to be production worthy. There is also source and mask co-optimization which influences the final mask patterns and assist feature sizes and positions for a given target. In this study, we will discuss assist feature insertion methods for sub 40-nm technology.

Effects of hard mask etch on final topography of advanced phase shift masks

NASA Astrophysics Data System (ADS)

Hortenbach, Olga; Rolff, Haiko; Lajn, Alexander; Baessler, Martin

2017-07-01

Continuous shrinking of the semiconductor device dimensions demands steady improvements of the lithographic resolution on wafer level. These requirements challenge the photomask industry to further improve the mask quality in all relevant printing characteristics. In this paper topography of the Phase Shift Masks (PSM) was investigated. Effects of hard mask etch on phase shift uniformity and mask absorber profile were studied. Design of experiments method (DoE) was used for the process optimization, whereas gas composition, bias power of the hard mask main etch and bias power of the over-etch were varied. In addition, influence of the over-etch time was examined at the end of the experiment. Absorber depth uniformity, sidewall angle (SWA), reactive ion etch lag (RIE lag) and through pitch (TP) dependence were analyzed. Measurements were performed by means of Atomic-force microscopy (AFM) using critical dimension (CD) mode with a boot-shaped tip. Scanning electron microscope (SEM) cross-section images were prepared to verify the profile quality. Finally CD analysis was performed to confirm the optimal etch conditions. Significant dependence of the absorber SWA on hard mask (HM) etch conditions was observed revealing an improvement potential for the mask absorber profile. It was found that hard mask etch can leave a depth footprint in the absorber layer. Thus, the etch depth uniformity of hard mask etch is crucial for achieving a uniform phase shift over the active mask area. The optimized hard mask etch process results in significantly improved mask topography without deterioration of tight CD specifications.

The circadian rhythm of core temperature: effects of physical activity and aging.

PubMed

Weinert, Dietmar; Waterhouse, Jim

2007-02-28

The circadian rhythm of core temperature depends upon several interacting rhythms, of both endogenous and exogenous origin, but an understanding of the process requires these two components to be separated. Constant routines remove the exogenous (masking) component at source, but they are severely limited in their application. By contrast, several purification methods have successfully reduced the masking component of overt circadian rhythms measured in field circumstances. One important, but incidental, outcome from these methods is that they enable a quantitative estimate of masking effects to be obtained. It has been shown that these effects of activity upon the temperature rhythm show circadian rhythmicity, and more detailed investigations of this have aided our understanding of thermoregulation and the genesis of the circadian rhythm of core temperature itself. The observed circadian rhythm of body temperature varies with age; in comparison with adults, it is poorly developed in the neonate and deteriorates in the aged subject. Comparing masked and purified data enables the reasons for these differences--whether due to the body clock, the effector pathways or organs, or irregularities due to the individual's lifestyle--to begin to be understood. Such investigations stress the immaturity of the circadian rhythm in the human neonate and its deterioration in elderly compared with younger subjects, but they also indicate the robustness of the body clock itself into advanced age, at least in mice.

Application of multi-tone mask technology in photolithographic fabrication of color filter components in LCD

NASA Astrophysics Data System (ADS)

Takada, Yoshihiro; Fukui, Matoko; Sai, Tsunehiro

2008-11-01

Recent progresses in the photoresists and photolithography for LCD industry applications have been primarily driven by the following two factors: advancement in the material performances (high resolution, high contrast ratio, low dielectric constant) for higher display quality, and cost reduction in the fabrication process. Along with crucial demand for cost competitiveness by improving production efficiency, environmental consciousness has been a major priority at fabrication process design to minimize the amount of waste produced. Having said the above, integration of two or more fabrication processes into a single process by using multi-tone mask technology has been the interest of research, due to its obvious advantage of reducing fabrication processes and cost. For example, multi-tone mask technology application has been widely employed on the TFT side to reduce the different types of photomasks being used. Similar trend has been employed on the CF side as well, where application of multi-tone mask technology is being investigated to integrate fabrication of multiple CF micro-components into a single process. In this presentation, we demonstrate a new approach of fabricating photospacer and peripheral CF components (MVA protrusion, sub-photospacers) in a single integrated process through multi-tone mask technology.

Shadows Alter Facial Expressions of Noh Masks

PubMed Central

Kawai, Nobuyuki; Miyata, Hiromitsu; Nishimura, Ritsuko; Okanoya, Kazuo

2013-01-01

Background A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers’ recognition of the emotional expressions. Methodology/Principal Findings In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. Conclusions/Significance Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa’s smile. They also agree with the aesthetic principle of Japanese traditional art “yugen (profound grace and subtlety)”, which highly appreciates subtle emotional expressions in the darkness. PMID:23940748

Film loss-free cleaning chemicals for EUV mask lifetime elongation developed through combinatorial chemical screening

NASA Astrophysics Data System (ADS)

Choi, Jaehyuck; Kim, Jinsu; Lowe, Jeff; Dattilo, Davide; Koh, Soowan; Choi, Jun Yeol; Dietze, Uwe; Shoki, Tsutomu; Kim, Byung Gook; Jeon, Chan-Uk

2015-10-01

EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality and patterning performance can change during mask fabrication, EUV exposure, maintenance cleaning, shipping, or storage. SPM (Sulfuric acid peroxide mixture) which has been extensively used for acid cleaning of photomask and wafer has serious drawback for EUV mask cleaning. It shows severe film loss of tantalum-based absorber layers and limited removal efficiency of EUV-generated carbon contaminants on EUV mask surface. Here, we introduce such novel cleaning chemicals developed for EUV mask as almost film loss free for various layers of the mask and superior carbon removal performance. Combinatorial chemical screening methods allowed us to screen several hundred combinations of various chemistries and additives under several different process conditions of temperature and time, eventually leading to development of the best chemistry selections for EUV mask cleaning. Recently, there have been many activities for the development of EUV pellicle, driven by ASML and core EUV scanner customer companies. It is still important to obtain film-loss free cleaning chemicals because cleaning cycle of EUV mask should be much faster than that of optic mask mainly due to EUV pellicle lifetime. More frequent cleaning, combined with the adoption of new materials for EUV masks, necessitates that mask manufacturers closely examine the performance change of EUV masks during cleaning process. We have investigated EUV mask quality changes and film losses during 50 cleaning cycles using new chemicals as well as particle and carbon contaminant removal characteristics. We have observed that the performance of new chemicals developed is superior to current SPM or relevant cleaning chemicals for EUV mask cleaning and EUV mask lifetime elongation.

Process optimization for particle removal on blank chrome mask plates in preparation for resist application

NASA Astrophysics Data System (ADS)

Osborne, Stephen; Smith, Eryn; Woster, Eric; Pelayo, Anthony

2002-03-01

As integrated circuits require smaller lines to provide the memory and processing capability for tomorrow's marketplace, the photomask industry is adopting higher contrast resists to improve photomask lithography. Photomask yield for several high-contrast resist recipes may be improved by coating masks at the mask shop. When coating at a mask shop, an effective method is available that uses coat/bake cluster tools to ensure blanks are clean prior to coating. Many high-contrast resists are available, and some are more susceptible to time-dependent performance factors than conventional resists. One of these factors is the time between coating and writing. Although future methods may reduce the impact of this factor, one current trend is to reduce this time by coating plates at the mask shop just prior to writing. Establishing an effective process to clean blanks prior to coating is necessary for product quality control and is a new task that is critical for maskmakers who previously purchased mask plates but have decided to begin coating them within their facility. This paper provides a strategy and method to be used within coat/bake cluster tools to remove particle contamination from mask blanks. The process uses excimer-UV ionizing radiation and ozone to remove organic contaminants, and then uses a wet process combined with megasonic agitation, surfactant, and spin forces. Megasonic agitation with surfactant lifts up particles, while the convective outflow of water enhances centripetal shear without accumulating harmful charge.

A pattern-based method to automate mask inspection files

NASA Astrophysics Data System (ADS)

Kamal Baharin, Ezni Aznida Binti; Muhsain, Mohamad Fahmi Bin; Ahmad Ibrahim, Muhamad Asraf Bin; Ahmad Noorhani, Ahmad Nurul Ihsan Bin; Sweis, Jason; Lai, Ya-Chieh; Hurat, Philippe

2017-03-01

Mask inspection is a critical step in the mask manufacturing process in order to ensure all dimensions printed are within the needed tolerances. This becomes even more challenging as the device nodes shrink and the complexity of the tapeout increases. Thus, the amount of measurement points and their critical dimension (CD) types are increasing to ensure the quality of the mask. In addition to the mask quality, there is a significant amount of manpower needed when the preparation and debugging of this process are not automated. By utilizing a novel pattern search technology with the ability to measure and report match region scan-line (edge) measurements, we can create a flow to find, measure and mark all metrology locations of interest and provide this automated report to the mask shop for inspection. A digital library is created based on the technology product and node which contains the test patterns to be measured. This paper will discuss how these digital libraries will be generated and then utilized. As a time-critical part of the manufacturing process, this can also reduce the data preparation cycle time, minimize the amount of manual/human error in naming and measuring the various locations, reduce the risk of wrong/missing CD locations, and reduce the amount of manpower needed overall. We will also review an example pattern and how the reporting structure to the mask shop can be processed. This entire process can now be fully automated.

The Effect Of Digital Unsharp Masking On The Detectability Of Interstitial Infiltrates And Pneumothoraces

NASA Astrophysics Data System (ADS)

MacMahon, Heber; Vyborny, Carl; Sabeti, Victoria; Metz, Charles; Doi, Kunio

1985-09-01

A potential advantage of digital radiographic systems is their ability to enhance images by various types of processing. Digital unsharp masking is one of the simplest and potentially most useful forms of enhancement. The efficacy of unsharp masking in clinical radiologic diagnosis has not been investigated systematically, however. The effect of digital unsharp masking on the detectability of two types of subtle abnormalities, pneumothorax and interstitial infiltrate, was studied in an observer performance test. An ROC analysis of this preliminary data suggests that unsharp masking may improve diagnostic accuracy for pneumothorax. Radiologists' performance in identifying interstitial infiltrates was degraded by the image processing, however, and false positive diagnoses tended to be more frequent.

Advanced refractory-metal and process technology for the fabrication of x-ray masks

NASA Astrophysics Data System (ADS)

Brooks, Cameron J.; Racette, Kenneth C.; Lercel, Michael J.; Powers, Lynn A.; Benoit, Douglas E.

1999-06-01

This paper provides an in-depth report of the advanced materials and process technology being developed for x-ray mask manufacturing at IBM. Masks using diamond membranes as replacement for silicon carbide are currently being fabricated. Alternate tantalum-based absorbers, such as tantalum boron, which offer improved etch resolution and critical dimension control, as well as higher x-ray absorption, are also being investigated. In addition to the absorber studies, the development of conductive chromium- based hard-mask films to replace the current silicon oxynitride layer is being explored. The progress of this advanced-materials work, which includes significant enhancements to x-ray mask image-placement performance, will be outlined.

The Effects of Screw Configuration and Polymeric Carriers on Hot-Melt Extruded Taste-Masked Formulations Incorporated into Orally Disintegrating Tablets

PubMed Central

Morott, Joseph T.; Pimparade, Manjeet; Park, Jun-Bom; Worley, Chelsea P.; Majumdar, Soumyajit; Lian, Zhuoyang; Pinto, Elanor; Bi, Yunxia; Durig, Thomas; Repka, Michael A.

2015-01-01

The primary aim of this research was to produce successfully taste masked formulations of Sildenafil Citrate (SC) using hot-melt extrusion (HME) technology. Multiple screw configurations and polymeric carriers were evaluated for their effects on taste masking efficiency, which was assessed by both E-tongue analysis and in vitro dissolution in simulated salivary fluid (SSF, pH 6.8 artificial saliva). The screw configurations were further assessed for their effects on the morphology of the API using PXRD, FT-IR and mid-infrared chemical imaging. It was determined that the screw configuration had a profound effect on the taste masking efficiency of the formulations as a result of altering the physical state of the API. Selected extruded formulations using ethylcellulose (EC) with a pore former were further formulated into orally disintegrating tablets (ODTs), which were optimized by varying the grade and percentage of the superdisintegrant used. An optimized disintegration time of approximately 8 seconds was achieved. The final ODT formulation exhibited excellent taste masking properties with over 85% drug release in gastric media as well as physical tablet properties. Interestingly, friability, which tends to be a common concern when formulating ODTs, was well within the acceptable limits (<1%) for common tablets. PMID:25410968

Comparison of binary mask defect printability analysis using virtual stepper system and aerial image microscope system

NASA Astrophysics Data System (ADS)

Phan, Khoi A.; Spence, Chris A.; Dakshina-Murthy, S.; Bala, Vidya; Williams, Alvina M.; Strener, Steve; Eandi, Richard D.; Li, Junling; Karklin, Linard

1999-12-01

As advanced process technologies in the wafer fabs push the patterning processes toward lower k1 factor for sub-wavelength resolution printing, reticles are required to use optical proximity correction (OPC) and phase-shifted mask (PSM) for resolution enhancement. For OPC/PSM mask technology, defect printability is one of the major concerns. Current reticle inspection tools available on the market sometimes are not capable of consistently differentiating between an OPC feature and a true random defect. Due to the process complexity and high cost associated with the making of OPC/PSM reticles, it is important for both mask shops and lithography engineers to understand the impact of different defect types and sizes to the printability. Aerial Image Measurement System (AIMS) has been used in the mask shops for a number of years for reticle applications such as aerial image simulation and transmission measurement of repaired defects. The Virtual Stepper System (VSS) provides an alternative method to do defect printability simulation and analysis using reticle images captured by an optical inspection or review system. In this paper, pre- programmed defects and repairs from a Defect Sensitivity Monitor (DSM) reticle with 200 nm minimum features (at 1x) will be studied for printability. The simulated resist lines by AIMS and VSS are both compared to SEM images of resist wafers qualitatively and quantitatively using CD verification.Process window comparison between unrepaired and repaired defects for both good and bad repair cases will be shown. The effect of mask repairs to resist pattern images for the binary mask case will be discussed. AIMS simulation was done at the International Sematech, Virtual stepper simulation at Zygo and resist wafers were processed at AMD-Submicron Development Center using a DUV lithographic process for 0.18 micrometer Logic process technology.

OPC care-area feedforwarding to MPC

NASA Astrophysics Data System (ADS)

Dillon, Brian; Peng, Yi-Hsing; Hamaji, Masakazu; Tsunoda, Dai; Muramatsu, Tomoyuki; Ohara, Shuichiro; Zou, Yi; Arnoux, Vincent; Baron, Stanislas; Zhang, Xiaolong

2016-10-01

Demand for mask process correction (MPC) is growing for leading-edge process nodes. MPC was originally intended to correct CD linearity for narrow assist features difficult to resolve on a photomask without any correction, but it has been extended to main features as process nodes have been shrinking. As past papers have observed, MPC shows improvements in photomask fidelity. Using advanced shape and dose corrections could give more improvements, especially at line-ends and corners. However, there is a dilemma on using such advanced corrections on full mask level because it increases data volume and run time. In addition, write time on variable shaped beam (VSB) writers also increases as the number of shots increases. Optical proximity correction (OPC) care-area defines circuit design locations that require high mask fidelity under mask writing process variations such as energy fluctuation. It is useful for MPC to switch its correction strategy and permit the use of advanced mask correction techniques in those local care-areas where they provide maximum wafer benefits. The use of mask correction techniques tailored to localized post-OPC design can result in similar desired level of data volume, run time, and write time. ASML Brion and NCS have jointly developed a method to feedforward the care-area information from Tachyon LMC to NDE-MPC to provide real benefit for improving both mask writing and wafer printing quality. This paper explains the detail of OPC care-area feedforwarding to MPC between ASML Brion and NCS, and shows the results. In addition, improvements on mask and wafer simulations are also shown. The results indicate that the worst process variation (PV) bands are reduced up to 37% for a 10nm tech node metal case.

Real-Time Implementation of Nonlinear Processing Functions.

DTIC Science & Technology

1981-08-01

crystal devices and then to use them in a coherent optical data- processing apparatus using halftone masks custom designed at the University oi Southern...California. With the halftone mask technique, we have demonstrated logarithmic nonlinear transformation, allowing us to separate multiplicative images...improved.,_ This device allowed nonlinear functions to be implemented directly wit - out the need for specially made halftone masks. Besides

Determining the energetic and informational components of speech-on-speech masking

PubMed Central

Kidd, Gerald; Mason, Christine R.; Swaminathan, Jayaganesh; Roverud, Elin; Clayton, Kameron K.; Best, Virginia

2016-01-01

Identification of target speech was studied under masked conditions consisting of two or four independent speech maskers. In the reference conditions, the maskers were colocated with the target, the masker talkers were the same sex as the target, and the masker speech was intelligible. The comparison conditions, intended to provide release from masking, included different-sex target and masker talkers, time-reversal of the masker speech, and spatial separation of the maskers from the target. Significant release from masking was found for all comparison conditions. To determine whether these reductions in masking could be attributed to differences in energetic masking, ideal time-frequency segregation (ITFS) processing was applied so that the time-frequency units where the masker energy dominated the target energy were removed. The remaining target-dominated “glimpses” were reassembled as the stimulus. Speech reception thresholds measured using these resynthesized ITFS-processed stimuli were the same for the reference and comparison conditions supporting the conclusion that the amount of energetic masking across conditions was the same. These results indicated that the large release from masking found under all comparison conditions was due primarily to a reduction in informational masking. Furthermore, the large individual differences observed generally were correlated across the three masking release conditions. PMID:27475139

Automated imprint mask cleaning for step-and-flash imprint lithography

NASA Astrophysics Data System (ADS)

Singh, Sherjang; Chen, Ssuwei; Selinidis, Kosta; Fletcher, Brian; McMackin, Ian; Thompson, Ecron; Resnick, Douglas J.; Dress, Peter; Dietze, Uwe

2009-03-01

Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

Spatial release from masking based on binaural processing for up to six maskers

PubMed Central

Yost, William A.

2017-01-01

Spatial Release from Masking (SRM) was measured for identification of a female target word spoken in the presence of male masker words. Target words from a single loudspeaker located at midline were presented when two, four, or six masker words were presented either from the same source as the target or from spatially separated masker sources. All masker words were presented from loudspeakers located symmetrically around the centered target source in the front azimuth hemifield. Three masking conditions were employed: speech-in-speech masking (involving both informational and energetic masking), speech-in-noise masking (involving energetic masking), and filtered speech-in-filtered speech masking (involving informational masking). Psychophysical results were summarized as three-point psychometric functions relating proportion of correct word identification to target-to-masker ratio (in decibels) for both the co-located and spatially separated target and masker sources cases. SRM was then calculated by comparing the slopes and intercepts of these functions. SRM decreased as the number of symmetrically placed masker sources increased from two to six. This decrease was independent of the type of masking, with almost no SRM measured for six masker sources. These results suggest that when SRM is dependent primarily on binaural processing, SRM is effectively limited to fewer than six sound sources. PMID:28372135

Reticles, write time, and the need for speed

NASA Astrophysics Data System (ADS)

Ackmann, Paul W.; Litt, Lloyd C.; Ning, Guo Xiang

2014-10-01

Historical data indicates reticle write times are increasing node-to-node. The cost of mask sets is increasing driven by the tighter requirements and more levels. The regular introduction of new generations of mask patterning tools with improved performance is unable to fully compensate for the increased data and complexity required. Write time is a primary metric that drives mask fabrication speed. Design (Raw data) is only the first step in the process and many interactions between mask and wafer technology such as OPC used, OPC efficiency for writers, fracture engines, and actual field size used drive total write time. Yield, technology, and inspection rules drive the remaining raw cycle time. Yield can be even more critical for speed of delivery as it drives re-writes and wasted time. While intrinsic process yield is important, repair capability is the reason mask delivery is still able to deliver 100% good reticles to the fab. Advanced nodes utilizing several layers of multiple patterning may require mask writer tool dedication to meet image placement specifications. This will increase the effective mask cycle time for a layer mask set and drive the need for additional mask write capability in order to deliver masks at the rate required by the wafer fab production schedules.

Mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Jones, Chris; Doyle, Gary F.; Brown, Laura; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-11-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer are covered in detail.

Near perfect optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goeke, R.; Farnsworth, A.V.; Neumann, C.C.

1996-06-01

This report discusses a novel fabrication process to produce nearly perfect optics. The process utilizes vacuum deposition techniques to optimally modify polished optical substrate surfaces. The surface figure, i.e. contour of a polished optical element, is improved by differentially filling in the low spots on the surface using flux from a physical vapor deposition source through an appropriate mask. The process is expected to enable the manufacture of diffraction-limited optical systems for the UV, extreme UV, and soft X-ray spectral regions, which would have great impact on photolithography and astronomy. This same technique may also reduce the fabrication cost ofmore » visible region optics with aspheric surfaces.« less

Understanding and reduction of defects on finished EUV masks

NASA Astrophysics Data System (ADS)

Liang, Ted; Sanchez, Peter; Zhang, Guojing; Shu, Emily; Nagpal, Rajesh; Stivers, Alan

2005-05-01

To reduce the risk of EUV lithography adaptation for the 32nm technology node in 2009, Intel has operated a EUV mask Pilot Line since early 2004. The Pilot Line integrates all the necessary process modules including common tool sets shared with current photomask production as well as EUV specific tools. This integrated endeavor ensures a comprehensive understanding of any issues, and development of solutions for the eventual fabrication of defect-free EUV masks. Two enabling modules for "defect-free" masks are pattern inspection and repair, which have been integrated into the Pilot Line. This is the first time we are able to look at real defects originated from multilayer blanks and patterning process on finished masks over entire mask area. In this paper, we describe our efforts in the qualification of DUV pattern inspection and electron beam mask repair tools for Pilot Line operation, including inspection tool sensitivity, defect classification and characterization, and defect repair. We will discuss the origins of each of the five classes of defects as seen by DUV pattern inspection tool on finished masks, and present solutions of eliminating and mitigating them.

Gestalt grouping and common onset masking.

PubMed

Kahan, Todd A; Mathis, Katherine M

2002-11-01

A four-dot mask that surrounds and is presented simultaneously with a briefly presented target will reduce a person's ability to identity that target if the mask persists beyond target offset and attention is divided (Enns & Di Lollo, 1997, 2000). This masking effect, referred to as common onset masking, reflects reentrant processing in the visual system and can best be explained with a theory of object substitution (Di Lollo, Enns, & Rensink, 2000). In the present experiments, we investigated whether Gestalt grouping variables would influence the strength of common onset masking. The results indicated that (1) masking was impervious to grouping by form, similarity of color, position, luminance polarity, and common region and (2) masking increased with the number of elements in the masking display.

Investigation of phase distribution using Phame® in-die phase measurements

NASA Astrophysics Data System (ADS)

Buttgereit, Ute; Perlitz, Sascha

2009-03-01

As lithography mask processes move toward 45nm and 32nm node, mask complexity increases steadily, mask specifications tighten and process control becomes extremely important. Driven by this fact the requirements for metrology tools increase as well. Efforts in metrology have been focused on accurately measuring CD linearity and uniformity across the mask, and accurately measuring phase variation on Alternating/Attenuated PSM and transmission for Attenuated PSM. CD control on photo masks is usually done through the following processes: exposure dose/focus change, resist develop and dry etch. The key requirement is to maintain correct CD linearity and uniformity across the mask. For PSM specifically, the effect of CD uniformity for both Alternating PSM and Attenuated PSM and etch depth for Alternating PSM becomes also important. So far phase measurement has been limited to either measuring large-feature phase using interferometer-based metrology tools or measuring etch depth using AFM and converting etch depth into phase under the assumption that trench profile and optical properties of the layers remain constant. However recent investigations show that the trench profile and optical property of layers impact the phase. This effect is getting larger for smaller CD's. The currently used phase measurement methods run into limitations because they are not able to capture 3D mask effects, diffraction limitations or polarization effects. The new phase metrology system - Phame(R) developed by Carl Zeiss SMS overcomes those limitations and enables laterally resolved phase measurement in any kind of production feature on the mask. The resolution of the system goes down to 120nm half pitch at mask level. We will report on tool performance data with respect to static and dynamic phase repeatability focusing on Alternating PSM. Furthermore the phase metrology system was used to investigate mask process signatures on Alternating PSM in order to further improve the overall PSM process performance. Especially global loading effects caused by the pattern density and micro loading effects caused by the feature size itself have been evaluated using the capability of measuring phase in the small production features. The results of this study will be reported in this paper.

Process Development for Reactive-Ion Etching of Molybdenum Disulfide (MoS2) Utilizing a Poly(methyl methacrylate) (PMMA) Etch Mask

DTIC Science & Technology

2017-10-01

Mazzoni Oak Ridge Associated Universities (ORAU) Maryland, Belcamp, MD Robert A Burke General Technical Services , LLC, Wall Township, NJ Barbara M...of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services ...solvent, or sonication. However, by using these physical procedures, there is a larger risk that the quality and structural integrity of the 2-D layer may

Blood, sweat and plaster casts: Reviewing the history, composition, and scientific value of the Raymond A. Dart Collection of African Life and Death Masks.

PubMed

Houlton, T M R; Billings, B K

2017-10-01

This paper addresses the history, composition and scientific value of one of the most comprehensive facemask collections in Africa, the Raymond A. Dart Collection of African Life and Death Masks. Housed within the School of Anatomical Sciences at the University of the Witwatersrand (South Africa), it comprises 1110 masks (397 life, 487 death, 226 unknown). Life masks represent populations throughout Africa; death masks predominately southern Africa. Males preponderate by 75%. Recorded ages are error prone, but suggest most life masks are those of <35 year-olds, death masks of 36+ year-olds. A total of 241 masks have associated skeletons, 209 presenting a complete skull. Life masks date between 1927 and c.1980s, death masks 1933 and 1963. This historical collection presents uncanny associations with outmoded typological and evolutionary theories. Once perceived an essential scientific resource, performed craniofacial superimpositions identify the nose as the only stable feature maintained, with the remaining face best preserved in young individuals with minimal body fat. The facemask collection is most viable for teaching and research within the history of science, specifically physical anthropology, and presents some value to craniofacial identification. Future research will have to be conducted with appropriate ethical considerations to science and medicine. Copyright © 2017 Elsevier GmbH. All rights reserved.

Optimal mask characterization by Surrogate Wafer Print (SWaP) method

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

2008-10-01

Traditionally, definition of mask specifications is done completely by the mask user, while characterization of the mask relative to the specifications is done completely by the mask maker. As the challenges of low-k1 imaging continue to grow in scope of designs and in absolute complexity, the inevitable partnership between wafer lithographers and mask makers has strengthened as well. This is reflected in the jointly owned mask facilities and device manufacturers' continued maintenance of fully captive mask shops which foster the closer mask-litho relationships. However, while some device manufacturers have leveraged this to optimize mask specifications before the mask is built and, therefore, improve mask yield and cost, the opportunity for post-fabrication partnering on mask characterization is more apparent and compelling. The Advanced Mask Technology Center (AMTC) has been investigating the concept of assessing how a mask images, rather than the mask's physical attributes, as a technically superior and lower-cost method to characterize a mask. The idea of printing a mask under its intended imaging conditions, then characterizing the imaged wafer as a surrogate for traditional mask inspections and measurements represents the ultimate method to characterize a mask's performance, which is most meaningful to the user. Surrogate wafer print (SWaP) is already done as part of leading-edge wafer fab mask qualification to validate defect and dimensional performance. In the past, the prospect of executing this concept has generally been summarily discarded as technically untenable and logistically intractable. The AMTC published a paper at BACUS 2007 successfully demonstrating the performance of SWaP for the characterization of defects as an alternative to traditional mask inspection [1]. It showed that this concept is not only feasible, but, in some cases, desirable. This paper expands on last year's work at AMTC to assess the full implementation of SWaP as an enhancement to mask characterization quality including defectivity, dimensional control, pattern fidelity, and in-plane distortion. We present a thorough analysis of both the technical and logistical challenges coupled with an objective view of the advantages and disadvantages from both the technical and financial perspectives. The analysis and model used by the AMTC will serve to provoke other mask shops to prepare their own analyses then consider this new paradigm for mask characterization and qualification.

Dual-sided coded-aperture imager

DOEpatents

Ziock, Klaus-Peter [Clinton, TN

2009-09-22

In a vehicle, a single detector plane simultaneously measures radiation coming through two coded-aperture masks, one on either side of the detector. To determine which side of the vehicle a source is, the two shadow masks are inverses of each other, i.e., one is a mask and the other is the anti-mask. All of the data that is collected is processed through two versions of an image reconstruction algorithm. One treats the data as if it were obtained through the mask, the other as though the data is obtained through the anti-mask.

Advanced repair solution of clear defects on HTPSM by using nanomachining tool

NASA Astrophysics Data System (ADS)

Lee, Hyemi; Kim, Munsik; Jung, Hoyong; Kim, Sangpyo; Yim, Donggyu

2015-10-01

As the mask specifications become tighter for low k1 lithography, more aggressive repair accuracy is required below sub 20nm tech. node. To meet tight defect specifications, many maskshops select effective repair tools according to defect types. Normally, pattern defects are repaired by the e-beam repair tool and soft defects such as particles are repaired by the nanomachining tool. It is difficult for an e-beam repair tool to remove particle defects because it uses chemical reaction between gas and electron, and a nanomachining tool, which uses physical reaction between a nano-tip and defects, cannot be applied for repairing clear defects. Generally, film deposition process is widely used for repairing clear defects. However, the deposited film has weak cleaning durability, so it is easily removed by accumulated cleaning process. Although the deposited film is strongly attached on MoSiN(or Qz) film, the adhesive strength between deposited Cr film and MoSiN(or Qz) film becomes weaker and weaker by the accumulated energy when masks are exposed in a scanner tool due to the different coefficient of thermal expansion of each materials. Therefore, whenever a re-pellicle process is needed to a mask, all deposited repair points have to be confirmed whether those deposition film are damaged or not. And if a deposition point is damaged, repair process is needed again. This process causes longer and more complex process. In this paper, the basic theory and the principle are introduced to recover clear defects by using nanomachining tool, and the evaluated results are reviewed at dense line (L/S) patterns and contact hole (C/H) patterns. Also, the results using a nanomachining were compared with those using an e-beam repair tool, including the cleaning durability evaluated by the accumulated cleaning process. Besides, we discuss the phase shift issue and the solution about the image placement error caused by phase error.

Masked Ballot Voting for Receipt-Free Online Elections

NASA Astrophysics Data System (ADS)

Wen, Roland; Buckland, Richard

To prevent bribery and coercion attacks on voters, current online election schemes rely on strong physical assumptions during the election. We introduce Masked Ballot, an online voting scheme that mitigates these attacks while using a more practical assumption: untappable channels are available but only before the election. During the election voters cast ballots over completely public channels without relying on untappable channels, anonymous channels or trusted devices. Masked Ballot performs only the voting part of an election and is designed to integrate with counting schemes that compute the final election result.

High speed, mask-less, laser controlled deposition of microscale tungsten tracks using 405 nm wavelength diode laser

NASA Astrophysics Data System (ADS)

Ten, Jyi Sheuan; Sparkes, Martin; O'Neill, William

2017-02-01

A rapid, mask-less deposition technique for the deposition of conductive tracks to nano- and micro-devices has been developed. The process uses a 405 nm wavelength laser diode for the direct deposition of tungsten tracks on silicon substrates via laser assisted chemical vapour deposition. Unlike lithographic processes this technique is single step and does not require chemical masks that may contaminate the substrate. To demonstrate the process, tungsten was deposited from tungsten hexacarbonyl precursors to produce conductive tracks with widths of 1.7-28 μm and heights of 0.05-35 μm at laser scan speeds up to 40 μm/s. The highest volumetric deposition rate achieved is 1×104 μm3/s, three orders of magnitude higher than that of focused ion beam deposition and on par with a 515 nm wavelength argon ion laser previously reported as the laser source. The microstructure and elemental composition of the deposits are comparable to that of largearea chemical vapour deposition methods using the same chemical precursor. The contact resistance and track resistance of the deposits has been measured using the transfer length method to be 205 μΩ cm. The deposition temperature has been estimated at 334 °C from a laser heat transfer model accounting for temperature dependent optical and physical properties of the substrate. The peak temperatures achieved on silicon and other substrates are higher than the thermal dissociation temperature of numerous precursors, indicating that this technique can also be used to deposit other materials such as gold and platinum on various substrates.

Effects of Temporal Integration on the Shape of Visual Backward Masking Functions

ERIC Educational Resources Information Center

Francis, Gregory; Cho, Yang Seok

2008-01-01

Many studies of cognition and perception use a visual mask to explore the dynamics of information processing of a target. Especially important in these applications is the time between the target and mask stimuli. A plot of some measure of target visibility against stimulus onset asynchrony is called a masking function, which can sometimes be…

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

Accelerating yield ramp through design and manufacturing collaboration

NASA Astrophysics Data System (ADS)

Sarma, Robin C.; Dai, Huixiong; Smayling, Michael C.; Duane, Michael P.

2004-12-01

Ramping an integrated circuit from first silicon bring-up to production yield levels is a challenge for all semiconductor products on the path to profitable market entry. Two approaches to accelerating yield ramp are presented. The first is the use of laser mask writers for fast throughput, high yield, and cost effective pattern transfer. The second is the use of electrical test to find a defect and identify the physical region to probe in failure analysis that is most likely to uncover the root cause. This provides feedback to the design team on modifications to make to the design to avoid the yield issue in a future tape-out revision. Additionally, the process parameter responsible for the root cause of the defect is forward annotated through the design, mask and wafer coordinate systems so it can be monitored in-line on subsequent lots of the manufacturing run. This results in an improved recipe for the manufacturing equipment to potentially prevent the recurrence of the defect and raise yield levels on the following material. The test diagnostics approach is enabled by the seamless traceability of a feature across the design, photomask and wafer, made possible by a common data model for design, mask pattern generation and wafer fabrication.

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

PubMed

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-08-11

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm²/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased.

A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

PubMed Central

Fan, Ching-Lin; Shang, Ming-Chi; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der

2014-01-01

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm2/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased. PMID:28788159

A diffusion model account of masked vs. unmasked priming: Are they qualitatively different?

PubMed Central

Gomez, Pablo; Perea, Manuel; Ratcliff, Roger

2017-01-01

In the past decades, hundreds of articles have explored the mechanisms underlying priming. Most researchers assume that masked and unmasked priming are qualitatively different. For masked priming, the effects are often assumed to reflect savings in the encoding of the target stimulus, whereas for unmasked priming, it has been suggested that the effects reflect the familiarity of the prime-target compound cue. In contrast, other researchers have claimed that masked and unmasked priming reflect essentially the same core processes. In this article, we use the diffusion model (Ratcliff, 1978) to account for the effects of masked and unmasked priming for identity and associatively related primes. The fits of the model lead us to the following conclusion: masked related primes give a head start to the processing of the target compared to unrelated primes, while unmasked priming affects primarily the quality of the lexical information. PMID:23647337

Etch bias inversion during EUV mask ARC etch

NASA Astrophysics Data System (ADS)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

2015-07-01

High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

Prediction and outcomes of impossible mask ventilation: a review of 50,000 anesthetics.

PubMed

Kheterpal, Sachin; Martin, Lizabeth; Shanks, Amy M; Tremper, Kevin K

2009-04-01

There are no existing data regarding risk factors for impossible mask ventilation and limited data regarding its incidence. The authors sought to determine the incidence, predictors, and outcomes associated with impossible mask ventilation. The authors performed an observational study over a 4-yr period. For each adult patient undergoing a general anesthetic, preoperative patient characteristics, detailed airway physical exam, and airway outcome data were collected. The primary outcome was impossible mask ventilation defined as the inability to exchange air during bag-mask ventilation attempts, despite multiple providers, airway adjuvants, or neuromuscular blockade. Secondary outcomes included the final, definitive airway management technique and direct laryngoscopy view. The incidence of impossible mask ventilation was calculated. Independent (P < 0.05) predictors of impossible mask ventilation were identified by performing a logistic regression full model fit. Over a 4-yr period from 2004 to 2008, 53,041 attempts at mask ventilation were recorded. A total of 77 cases of impossible mask ventilation (0.15%) were observed. Neck radiation changes, male sex, sleep apnea, Mallampati III or IV, and presence of beard were identified as independent predictors. The receiver-operating-characteristic area under the curve for this model was 0.80 +/- 0.03. Nineteen impossible mask ventilation patients (25%) also demonstrated difficult intubation, with 15 being intubated successfully. Twelve patients required an alternative intubation technique, including two surgical airways and two patients who were awakened and underwent successful fiberoptic intubation. Impossible mask ventilation is an infrequent airway event that is associated with difficult intubation. Neck radiation changes represent the most significant clinical predictor of impossible mask ventilation in the patient dataset.

Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yafarov, R. K., E-mail: pirpc@yandex.ru; Shanygin, V. Ya.

2017-04-15

The study is concerned with the physical and chemical processes and the mechanisms of the effect of plasma preparation of a surface on the systematic features of condensation and surface phase transformations during the formation of Si–C mask domains on p-Si(100) crystals by the deposition of submonolayer C coatings in the microwave plasma of low-pressure ethanol vapors. It is shown that, at short durations of the deposition of carbon onto silicon wafers with a natural-oxide coating at a temperature of 100°C, the formation of domains is observed. The lateral dimensions of the domains lie in the range from 10–15 tomore » 200 nm, and the heights of ridges produced by the plasma chemical etching of silicon through the mask domain coatings vary in the range from 40 to 80 nm.« less

Results from the first fully automated PBS-mask process and pelliclization

NASA Astrophysics Data System (ADS)

Oelmann, Andreas B.; Unger, Gerd M.

1994-02-01

Automation is widely discussed in IC- and mask-manufacturing and partially realized everywhere. The idea for the automation goes back to 1978, when it turned out that the operators for the then newly installed PBS-process-line (the first in Europe) should be trained to behave like robots for particle reduction gaining lower defect densities on the masks. More than this goal has been achieved. It turned out recently, that the automation with its dedicated work routes and detailed documentation of every lot (individual mask or reticle) made it easy to obtain the CEEC certificate which includes ISO 9001.

Variations in backward masking with different masking stimuli: II. The effects of spatially quantised masks in the light of local contour interaction, interchannel inhibition, perceptual retouch, and substitution theories.

PubMed

Bachmann, Talis; Luiga, Iiris; Põder, Endel

2005-01-01

In part I we showed that with spatially non-overlapping targets and masks both local metacontrast-like interactions and attentional processes are involved in backward masking. In this second part we extend the strategy of varying the contents of masks to pattern masking where targets and masks overlap in space, in order to compare different masking theories. Images of human faces were backward-masked by three types of spatially quantised masks (the same faces as targets, faces different from targets, and Gaussian noise with power spectra typical for faces). Configural characteristics, rather than the spectral content of the mask, predicted the extent of masking at relatively long stimulus onset asynchronies (SOAs). This poses difficulties for the theory of transient-on-sustained inhibition as the principal mechanism of masking and also for local contour interaction being a decisive factor in pattern masking. The scale of quantisation had no effect on the masking capacity of noise masks and a strong effect on the capacity of different-face masks. Also, the decrease of configural masking with an increase in the coarseness of the quantisation of the mask highlights ambiguities inherent in the re-entrance-based substitution theory of masking. Different masking theories cannot solve the problems of masking separately. They should be combined in order to create a complex, yet comprehensible mode of interaction for the different mechanisms involved in visual backward masking.

Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

NASA Astrophysics Data System (ADS)

Chang, Chung-Hsing

2005-01-01

For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we present a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

NASA Astrophysics Data System (ADS)

Chang, Chung-Hsing

2004-10-01

For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However, AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we report a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

The extended functional neuroanatomy of emotional processing biases for masked faces in major depressive disorder.

PubMed

Victor, Teresa A; Furey, Maura L; Fromm, Stephen J; Bellgowan, Patrick S F; Öhman, Arne; Drevets, Wayne C

2012-01-01

Major depressive disorder (MDD) is associated with a mood-congruent processing bias in the amygdala toward face stimuli portraying sad expressions that is evident even when such stimuli are presented below the level of conscious awareness. The extended functional anatomical network that maintains this response bias has not been established, however. To identify neural network differences in the hemodynamic response to implicitly presented facial expressions between depressed and healthy control participants. Unmedicated-depressed participants with MDD (n=22) and healthy controls (HC; n=25) underwent functional MRI as they viewed face stimuli showing sad, happy or neutral face expressions, presented using a backward masking design. The blood-oxygen-level dependent (BOLD) signal was measured to identify regions where the hemodynamic response to the emotionally valenced stimuli differed between groups. The MDD subjects showed greater BOLD responses than the controls to masked-sad versus masked-happy faces in the hippocampus, amygdala and anterior inferotemporal cortex. While viewing both masked-sad and masked-happy faces relative to masked-neutral faces, the depressed subjects showed greater hemodynamic responses than the controls in a network that included the medial and orbital prefrontal cortices and anterior temporal cortex. Depressed and healthy participants showed distinct hemodynamic responses to masked-sad and masked-happy faces in neural circuits known to support the processing of emotionally valenced stimuli and to integrate the sensory and visceromotor aspects of emotional behavior. Altered function within these networks in MDD may establish and maintain illness-associated differences in the salience of sensory/social stimuli, such that attention is biased toward negative and away from positive stimuli.

Fast mask writers: technology options and considerations

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

2011-04-01

The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

NASA Astrophysics Data System (ADS)

Xu, Yongan; Faure, Tom; Viswanathan, Ramya; Lobb, Granger; Wistrom, Richard; Burns, Sean; Hu, Lin; Graur, Ioana; Bleiman, Ben; Fischer, Dan; Mignot, Yann; Sakamoto, Yoshifumi; Toda, Yusuke; Bolton, John; Bailey, Todd; Felix, Nelson; Arnold, John; Colburn, Matthew

2016-04-01

In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.

An alternative method of fabricating sub-micron resolution masks using excimer laser ablation

NASA Astrophysics Data System (ADS)

Hayden, C. J.; Eijkel, J. C. T.; Dalton, C.

2004-06-01

In the work presented here, an excimer laser micromachining system has been used successfully to fabricate high-resolution projection and contact masks. The contact masks were subsequently used to produce chrome-gold circular ac electro-osmotic pump (cACEOP) microelectrode arrays on glass substrates, using a conventional contact photolithography process. The contact masks were produced rapidly (~15 min each) and were found to be accurate to sub-micron resolution, demonstrating an alternative route for mask fabrication. Laser machined masks were also used in a laser-projection system, demonstrating that such fabrication techniques are also suited to projection lithography. The work addresses a need for quick reproduction of high-resolution contact masks, given their rapid degradation when compared to non-contact masks.

Fabless company mask technology approach: fabless but not fab-careless

NASA Astrophysics Data System (ADS)

Hisamura, Toshiyuki; Wu, Xin

2009-10-01

There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer holds true. There is a need to be flexible enough on unrepairable defect at early stage but also a need for efficient risk management system on mask defect waivers. Mask defects are often waived in low design criticality area in favor of scrapping the mask and delaying the mask and wafer schedule. Xilinx's involvement in mask manufacturing has contributed significantly to our success in past many nodes and will continue.

Use of KRS-XE positive chemically amplified resist for optical mask manufacturing

NASA Astrophysics Data System (ADS)

Ashe, Brian; Deverich, Christina; Rabidoux, Paul A.; Peck, Barbara; Petrillo, Karen E.; Angelopoulos, Marie; Huang, Wu-Song; Moreau, Wayne M.; Medeiros, David R.

2002-03-01

The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch process to produce patterns in chrome. ZEP was employed for dry etch processing to meet the requirements of shrinking dimensions, optical proximity corrections and phase shift masks. However, ZEP offers low contrast, marginal etch resistance, organic solvent development, and concerns regarding resist heating with its high dose requirements1. Chemically Amplified Resist (CAR) systems are a very good choice for dimensions less than 180nm because of their high sensitivity and contrast, high resolution, dry etch resistance, aqueous development, and process latitude2. KRS-XE was developed as a high contrast CA resist based on ketal protecting groups that eliminate the need for post exposure bake (PEB). This resist can be used for a variety of electron beam exposures, and improves the capability to fabricate masks for devices smaller than 180nm. Many factors influence the performance of resists in mask making such as post apply bake, exposure dose, resist develop, and post exposure bake. These items will be discussed as well as the use of reactive ion etching (RIE) selectivity and pattern transfer.

Masking of Figure-Ground Texture and Single Targets by Surround Inhibition: A Computational Spiking Model

PubMed Central

Supèr, Hans; Romeo, August

2012-01-01

A visual stimulus can be made invisible, i.e. masked, by the presentation of a second stimulus. In the sensory cortex, neural responses to a masked stimulus are suppressed, yet how this suppression comes about is still debated. Inhibitory models explain masking by asserting that the mask exerts an inhibitory influence on the responses of a neuron evoked by the target. However, other models argue that the masking interferes with recurrent or reentrant processing. Using computer modeling, we show that surround inhibition evoked by ON and OFF responses to the mask suppresses the responses to a briefly presented stimulus in forward and backward masking paradigms. Our model results resemble several previously described psychophysical and neurophysiological findings in perceptual masking experiments and are in line with earlier theoretical descriptions of masking. We suggest that precise spatiotemporal influence of surround inhibition is relevant for visual detection. PMID:22393370

Planck CMB Anomalies: Astrophysical and Cosmological Secondary Effects and the Curse of Masking

NASA Astrophysics Data System (ADS)

Rassat, Anais

2016-07-01

Large-scale anomalies have been reported in CMB data with both WMAP and Planck data. These could be due to foreground residuals and or systematic effects, though their confirmation with Planck data suggests they are not due to a problem in the WMAP or Planck pipelines. If these anomalies are in fact primordial, then understanding their origin is fundamental to either validate the standard model of cosmology or to explore new physics. We investigate three other possible issues: 1) the trade-off between minimising systematics due to foreground contamination (with a conservative mask) and minimising systematics due to masking, 2) astrophysical secondary effects (the kinetic Doppler quadrupole and kinetic Sunyaev-Zel'dovich effect), and 3) secondary cosmological signals (the integrated Sachs-Wolfe effect). We address the masking issue by considering new procedures that use both WMAP and Planck to produce higher quality full-sky maps using the sparsity methodology (LGMCA maps). We show the impact of masking is dominant over that of residual foregrounds, and the LGMCA full-sky maps can be used without further processing to study anomalies. We consider four official Planck PR1 and two LGMCA CMB maps. Analysis of the observed CMB maps shows that only the low quadrupole and quadrupole-octopole alignment seem significant, but that the planar octopole, Axis of Evil, mirror parity and cold spot are not significant in nearly all maps considered. After subtraction of astrophysical and cosmological secondary effects, only the low quadrupole may still be considered anomalous, meaning the significance of only one anomaly is affected by secondary effect subtraction out of six anomalies considered. In the spirit of reproducible research all reconstructed maps and codes are available online.

Planck CMB anomalies: astrophysical and cosmological secondary effects and the curse of masking

NASA Astrophysics Data System (ADS)

Rassat, A.; Starck, J.-L.; Paykari, P.; Sureau, F.; Bobin, J.

2014-08-01

Large-scale anomalies have been reported in CMB data with both WMAP and Planck data. These could be due to foreground residuals and or systematic effects, though their confirmation with Planck data suggests they are not due to a problem in the WMAP or Planck pipelines. If these anomalies are in fact primordial, then understanding their origin is fundamental to either validate the standard model of cosmology or to explore new physics. We investigate three other possible issues: 1) the trade-off between minimising systematics due to foreground contamination (with a conservative mask) and minimising systematics due to masking, 2) astrophysical secondary effects (the kinetic Doppler quadrupole and kinetic Sunyaev-Zel'dovich effect), and 3) secondary cosmological signals (the integrated Sachs-Wolfe effect). We address the masking issue by considering new procedures that use both WMAP and Planck to produce higher quality full-sky maps using the sparsity methodology (LGMCA maps). We show the impact of masking is dominant over that of residual foregrounds, and the LGMCA full-sky maps can be used without further processing to study anomalies. We consider four official Planck PR1 and two LGMCA CMB maps. Analysis of the observed CMB maps shows that only the low quadrupole and quadrupole-octopole alignment seem significant, but that the planar octopole, Axis of Evil, mirror parity and cold spot are not significant in nearly all maps considered. After subtraction of astrophysical and cosmological secondary effects, only the low quadrupole may still be considered anomalous, meaning the significance of only one anomaly is affected by secondary effect subtraction out of six anomalies considered. In the spirit of reproducible research all reconstructed maps and codes will be made available for download here http://www.cosmostat.org/anomaliesCMB.html.

Implementing Connected Component Labeling as a User Defined Operator for SciDB

NASA Technical Reports Server (NTRS)

Oloso, Amidu; Kuo, Kwo-Sen; Clune, Thomas; Brown, Paul; Poliakov, Alex; Yu, Hongfeng

2016-01-01

We have implemented a flexible User Defined Operator (UDO) for labeling connected components of a binary mask expressed as an array in SciDB, a parallel distributed database management system based on the array data model. This UDO is able to process very large multidimensional arrays by exploiting SciDB's memory management mechanism that efficiently manipulates arrays whose memory requirements far exceed available physical memory. The UDO takes as primary inputs a binary mask array and a binary stencil array that specifies the connectivity of a given cell to its neighbors. The UDO returns an array of the same shape as the input mask array with each foreground cell containing the label of the component it belongs to. By default, dimensions are treated as non-periodic, but the UDO also accepts optional input parameters to specify periodicity in any of the array dimensions. The UDO requires four stages to completely label connected components. In the first stage, labels are computed for each subarray or chunk of the mask array in parallel across SciDB instances using the weighted quick union (WQU) with half-path compression algorithm. In the second stage, labels around chunk boundaries from the first stage are stored in a temporary SciDB array that is then replicated across all SciDB instances. Equivalences are resolved by again applying the WQU algorithm to these boundary labels. In the third stage, relabeling is done for each chunk using the resolved equivalences. In the fourth stage, the resolved labels, which so far are "flattened" coordinates of the original binary mask array, are renamed with sequential integers for legibility. The UDO is demonstrated on a 3-D mask of O(1011) elements, with O(108) foreground cells and O(106) connected components. The operator completes in 19 minutes using 84 SciDB instances.

65-nm full-chip implementation using double dipole lithography

NASA Astrophysics Data System (ADS)

Hsu, Stephen D.; Chen, J. Fung; Cororan, Noel; Knose, William T.; Van Den Broeke, Douglas J.; Laidig, Thomas L.; Wampler, Kurt E.; Shi, Xuelong; Hsu, Michael; Eurlings, Mark; Finders, Jo; Chiou, Tsann-Bim; Socha, Robert J.; Conley, Will; Hsieh, Yen W.; Tuan, Steve; Hsieh, Frank

2003-06-01

Double Dipole Lithography (DDL) has been demonstrated to be capable of patterning complex 2D patterns. Due to inherently high aerial imaging contrast, especially for dense features, we have found that it has a very good potential to meet manufacturing requirements for the 65nm node using ArF binary chrome masks. For patterning in the k1<0.35 regime without resorting to hard phase-shift masks (PSMs), DDL is one unique Resolution Enhancement Technique (RET) which can achieve an acceptable process window. To utilize DDL for printing actual IC devices, the original design data must be decomposed into "vertical (V)" and "horizontal (H)" masks for the respective X- and Y-dipole exposures. An improved two-pass, model-based, DDL mask data processing methodology has been established. It is capable of simultaneously converting complex logic and memory mask patterns into DDL compatible mask layout. To maximize the overlapped process window area, we have previously shown that the pattern-shielding algorithm must be intelligently applied together with both Scattering Bars (SBs) and model-based OPC (MOPC). Due to double exposures, stray light must be well-controlled to ensure uniform printing across the entire chip. One solution to minimize stray light is to apply large patches of solid chrome in open areas to reduce the background transmission during exposure. Unfortunately, this is not feasible for a typical clear-field poly gate masks to be patterned by a positive resist process. In this work, we report a production-worthy DDL mask pattern decomposition scheme for full-chip application. A new generation of DDL technology reticle set has been developed to verify the printing performance. Shielding is a critical part of the DDL. An innovative shielding scheme has been developed to protect the critical features and minimize the impact of stray light during double exposure.

Orientation tuning of contrast masking caused by motion streaks.

PubMed

Apthorp, Deborah; Cass, John; Alais, David

2010-08-01

We investigated whether the oriented trails of blur left by fast-moving dots (i.e., "motion streaks") effectively mask grating targets. Using a classic overlay masking paradigm, we varied mask contrast and target orientation to reveal underlying tuning. Fast-moving Gaussian blob arrays elevated thresholds for detection of static gratings, both monoptically and dichoptically. Monoptic masking at high mask (i.e., streak) contrasts is tuned for orientation and exhibits a similar bandwidth to masking functions obtained with grating stimuli (∼30 degrees). Dichoptic masking fails to show reliable orientation-tuned masking, but dichoptic masks at very low contrast produce a narrowly tuned facilitation (∼17 degrees). For iso-oriented streak masks and grating targets, we also explored masking as a function of mask contrast. Interestingly, dichoptic masking shows a classic "dipper"-like TVC function, whereas monoptic masking shows no dip and a steeper "handle". There is a very strong unoriented component to the masking, which we attribute to transiently biased temporal frequency masking. Fourier analysis of "motion streak" images shows interesting differences between dichoptic and monoptic functions and the information in the stimulus. Our data add weight to the growing body of evidence that the oriented blur of motion streaks contributes to the processing of fast motion signals.

An open-architecture approach to defect analysis software for mask inspection systems

NASA Astrophysics Data System (ADS)

Pereira, Mark; Pai, Ravi R.; Reddy, Murali Mohan; Krishna, Ravi M.

2009-04-01

Industry data suggests that Mask Inspection represents the second biggest component of Mask Cost and Mask Turn Around Time (TAT). Ever decreasing defect size targets lead to more sensitive mask inspection across the chip, thus generating too many defects. Hence, more operator time is being spent in analyzing and disposition of defects. Also, the fact that multiple Mask Inspection Systems and Defect Analysis strategies would typically be in use in a Mask Shop or a Wafer Foundry further complicates the situation. In this scenario, there is a need for a versatile, user friendly and extensible Defect Analysis software that reduces operator analysis time and enables correct classification and disposition of mask defects by providing intuitive visual and analysis aids. We propose a new vendor-neutral defect analysis software, NxDAT, based on an open architecture. The open architecture of NxDAT makes it easily extensible to support defect analysis for mask inspection systems from different vendors. The capability to load results from mask inspection systems from different vendors either directly or through a common interface enables the functionality of establishing correlation between inspections carried out by mask inspection systems from different vendors. This capability of NxDAT enhances the effectiveness of defect analysis as it directly addresses the real-life scenario where multiple types of mask inspection systems from different vendors co-exist in mask shops or wafer foundries. The open architecture also potentially enables loading wafer inspection results as well as loading data from other related tools such as Review Tools, Repair Tools, CD-SEM tools etc, and correlating them with the corresponding mask inspection results. A unique concept of Plug-In interface to NxDAT further enhances the openness of the architecture of NxDAT by enabling end-users to add their own proprietary defect analysis and image processing algorithms. The plug-in interface makes it possible for the end-users to make use of their collected knowledge through the years of experience in mask inspection process by encapsulating the knowledge into software utilities and plugging them into NxDAT. The plug-in interface is designed with the intent of enabling the pro-active mask defect analysis teams to build competitive differentiation into their defect analysis process while protecting their knowledge internally within their company. By providing interface with all major standard layout and mask data formats, NxDAT enables correlation of defect data on reticles with design and mask databases, further extending the effectiveness of defect analysis for D2DB inspection. NxDAT also includes many other advanced features for easy and fast navigation, visual display of defects, defect selection, multi-tier classification, defect clustering and gridding, sophisticated CD and contact measurement analysis, repeatability analysis such as adder analysis, defect trend, capture rate etc.

Partially Transparent Petaled Mask/Occulter for Visible-Range Spectrum

NASA Technical Reports Server (NTRS)

Shiri, Ron Shahram; Wasylkiwskyj, Wasyl

2013-01-01

The presence of the Poisson Spot, also known as the spot of Arago, has been known since the 18th century. This spot is the consequence of constructive interference of light diffracted by the edge of the obstacle where the central position can be determined by symmetry of the object. More recently, many NASA missions require the suppression of this spot in the visible range. For instance, the exoplanetary missions involving space telescopes require telescopes to image the planetary bodies orbiting central stars. For this purpose, the starlight needs to be suppressed by several orders of magnitude in order to image the reflected light from the orbiting planet. For the Earth-like planets, this suppression needs to be at least ten orders of magnitude. One of the common methods of suppression involves sharp binary petaled occulters envisioned to be placed many thousands of miles away from the telescope blocking the starlight. The suppression of the Poisson Spot by binary sharp petal tips can be problematic when the thickness of the tips becomes smaller than the wavelength of the incident beam. First they are difficult to manufacture and also it invalidates the laws of physical optics. The proposed partially transparent petaled masks/occulters compensate for this sharpness with transparency along the surface of the petals. Depending on the geometry of the problem, this transparency can be customized such that only a small region of the petal is transparent and the remaining of the surface is opaque. This feature allows easy fabrication of this type of occultation device either as a mask or occulter. A partially transparent petaled mask/ occulter has been designed for the visible spectrum range. The mask/occulter can suppress the intensity along the optical axis up to ten orders of magnitude. The design process can tailor the mask shape, number of petals, and transparency level to the near-field and farfield diffraction region. The mask/occulter can be used in space astronomy, ground-based telescope, and high-energy laser systems, and optical lithography to eliminate the Poisson Spot.

Removal of bone in CT angiography by multiscale matched mask bone elimination.

PubMed

Gratama van Andel, H A F; Venema, H W; Streekstra, G J; van Straten, M; Majoie, C B L M; den Heeten, G J; Grimbergen, C A

2007-10-01

For clear visualization of vessels in CT angiography (CTA) images of the head and neck using maximum intensity projection (MIP) or volume rendering (VR) bone has to be removed. In the past we presented a fully automatic method to mask the bone [matched mask bone elimination (MMBE)] for this purpose. A drawback is that vessels adjacent to bone may be partly masked as well. We propose a modification, multiscale MMBE, which reduces this problem by using images at two scales: a higher resolution than usual for image processing and a lower resolution to which the processed images are transformed for use in the diagnostic process. A higher in-plane resolution is obtained by the use of a sharper reconstruction kernel. The out-of-plane resolution is improved by deconvolution or by scanning with narrower collimation. The quality of the mask that is used to remove bone is improved by using images at both scales. After masking, the desired resolution for the normal clinical use of the images is obtained by blurring with Gaussian kernels of appropriate widths. Both methods (multiscale and original) were compared in a phantom study and with clinical CTA data sets. With the multiscale approach the width of the strip of soft tissue adjacent to the bone that is masked can be reduced from 1.0 to 0.2 mm without reducing the quality of the bone removal. The clinical examples show that vessels adjacent to bone are less affected and therefore better visible. Images processed with multiscale MMBE have a slightly higher noise level or slightly reduced resolution compared with images processed by the original method and the reconstruction and processing time is also somewhat increased. Nevertheless, multiscale MMBE offers a way to remove bone automatically from CT angiography images without affecting the integrity of the blood vessels. The overall image quality of MIP or VR images is substantially improved relative to images processed with the original MMBE method.

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Dry etching technologies for the advanced binary film

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Bottlenecks of the wavefront sensor based on the Talbot effect.

PubMed

Podanchuk, Dmytro; Kovalenko, Andrey; Kurashov, Vitalij; Kotov, Myhaylo; Goloborodko, Andrey; Danko, Volodymyr

2014-04-01

Physical constraints and peculiarities of the wavefront sensing technique, based on the Talbot effect, are discussed. The limitation on the curvature of the measurable wavefront is derived. The requirements to the Fourier spectrum of the periodic mask are formulated. Two kinds of masks are studied for their performance in the wavefront sensor. It is shown that the boundary part of the mask aperture does not contribute to the initial data for wavefront restoration. It is verified by experiment and computer simulation that the performance of the Talbot sensor, which meets established conditions, is similar to that of the Shack-Hartmann sensor.

Free electron laser with masked chicane

DOEpatents

Nguyen, Dinh C.; Carlsten, Bruce E.

1999-01-01

A free electron laser (FEL) is provided with an accelerator for outputting electron beam pulses; a buncher for modulating each one of the electron beam pulses to form each pulse into longitudinally dispersed bunches of electrons; and a wiggler for generating coherent light from the longitudinally dispersed bunches of electrons. The electron beam buncher is a chicane having a mask for physically modulating the electron beam pulses to form a series of electron beam bunches for input to the wiggler. In a preferred embodiment, the mask is located in the chicane at a position where each electron beam pulse has a maximum dispersion.

Effects of temporal integration on the shape of visual backward masking functions.

PubMed

Francis, Gregory; Cho, Yang Seok

2008-10-01

Many studies of cognition and perception use a visual mask to explore the dynamics of information processing of a target. Especially important in these applications is the time between the target and mask stimuli. A plot of some measure of target visibility against stimulus onset asynchrony is called a masking function, which can sometimes be monotonic increasing but other times is U-shaped. Theories of backward masking have long hypothesized that temporal integration of the target and mask influences properties of masking but have not connected the influence of integration with the shape of the masking function. With two experiments that vary the spatial properties of the target and mask, the authors provide evidence that temporal integration of the stimuli plays a critical role in determining the shape of the masking function. The resulting data both challenge current theories of backward masking and indicate what changes to the theories are needed to account for the new data. The authors further discuss the implication of the findings for uses of backward masking to explore other aspects of cognition.

Attentional Sensitization of Unconscious Cognition: Task Sets Modulate Subsequent Masked Semantic Priming

ERIC Educational Resources Information Center

Kiefer, Markus; Martens, Ulla

2010-01-01

According to classical theories, automatic processes are autonomous and independent of higher level cognitive influence. In contrast, the authors propose that automatic processing depends on attentional sensitization of task-congruent processing pathways. In 3 experiments, the authors tested this hypothesis with a modified masked semantic priming…

Pixel-based OPC optimization based on conjugate gradients.

PubMed

Ma, Xu; Arce, Gonzalo R

2011-01-31

Optical proximity correction (OPC) methods are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. In pixel-based OPC (PBOPC), the mask is divided into small pixels, each of which is modified during the optimization process. Two critical issues in PBOPC are the required computational complexity of the optimization process, and the manufacturability of the optimized mask. Most current OPC optimization methods apply the steepest descent (SD) algorithm to improve image fidelity augmented by regularization penalties to reduce the complexity of the mask. Although simple to implement, the SD algorithm converges slowly. The existing regularization penalties, however, fall short in meeting the mask rule check (MRC) requirements often used in semiconductor manufacturing. This paper focuses on developing OPC optimization algorithms based on the conjugate gradient (CG) method which exhibits much faster convergence than the SD algorithm. The imaging formation process is represented by the Fourier series expansion model which approximates the partially coherent system as a sum of coherent systems. In order to obtain more desirable manufacturability properties of the mask pattern, a MRC penalty is proposed to enlarge the linear size of the sub-resolution assistant features (SRAFs), as well as the distances between the SRAFs and the main body of the mask. Finally, a projection method is developed to further reduce the complexity of the optimized mask pattern.

Development of a low-cost x-ray mask for high-aspect-ratio MEM smart structures

NASA Astrophysics Data System (ADS)

Ajmera, Pratul K.; Stadler, Stefan; Abdollahi, Neda

1998-07-01

A cost-effective process with short fabrication time for making x-ray masks for research and development purposes is described here for fabricating high-aspect ratio microelectromechanical structures using synchrotron based x- ray lithography. Microscope cover glass slides as membrane material is described. Slides with an initial thickness of 175 micrometers are etched to a thickness in the range of 10 - 25 micrometers using a diluted HF and buffered hydrofluoric acid solutions. The thinned slides are glued on supportive mask frames and sputtered with a chromium/silver sandwich layer which acts as a plating base layer for the deposition of the gold absorber. The judicial choice of glue and mask frame material are significant parameters in a successful fabrication process. Gold absorber structures are electroplated on the membrane. Calculations are done for contrast and dose ratio obtained in the photoresist after synchrotron radiation as a function of the mask design parameters. Exposure experiments are performed to prove the applicability of the fabricated x-ray mask.

A novel anti-influenza copper oxide containing respiratory face mask.

PubMed

Borkow, Gadi; Zhou, Steve S; Page, Tom; Gabbay, Jeffrey

2010-06-25

Protective respiratory face masks protect the nose and mouth of the wearer from vapor drops carrying viruses or other infectious pathogens. However, incorrect use and disposal may actually increase the risk of pathogen transmission, rather than reduce it, especially when masks are used by non-professionals such as the lay public. Copper oxide displays potent antiviral properties. A platform technology has been developed that permanently introduces copper oxide into polymeric materials, conferring them with potent biocidal properties. We demonstrate that impregnation of copper oxide into respiratory protective face masks endows them with potent biocidal properties in addition to their inherent filtration properties. Both control and copper oxide impregnated masks filtered above 99.85% of aerosolized viruses when challenged with 5.66+/-0.51 and 6.17+/-0.37 log(10)TCID(50) of human influenza A virus (H1N1) and avian influenza virus (H9N2), respectively, under simulated breathing conditions (28.3 L/min). Importantly, no infectious human influenza A viral titers were recovered from the copper oxide containing masks within 30 minutes (< or = 0.88 log(10)TCID(50)), while 4.67+/-1.35 log(10)TCID(50) were recovered from the control masks. Similarly, the infectious avian influenza titers recovered from the copper oxide containing masks were < or = 0.97+/-0.01 log(10)TCID(50) and from the control masks 5.03+/-0.54 log(10)TCID(50). The copper oxide containing masks successfully passed Bacterial Filtration Efficacy, Differential Pressure, Latex Particle Challenge, and Resistance to Penetration by Synthetic Blood tests designed to test the filtration properties of face masks in accordance with the European EN 14683:2005 and NIOSH N95 standards. Impregnation of copper oxide into respiratory protective face masks endows them with potent anti-influenza biocidal properties without altering their physical barrier properties. The use of biocidal masks may significantly reduce the risk of hand or environmental contamination, and thereby subsequent infection, due to improper handling and disposal of the masks.

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Overlay improvement by exposure map based mask registration optimization

NASA Astrophysics Data System (ADS)

Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

2015-03-01

Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density could also achieve under 5nm performance. We assume mask registration excluding random error is mostly induced by charge accumulation during mask writing, which may be calculated from surrounding exposed pattern density. Multi-loading test mask registration result shows that with x direction writing sequence, mask registration behavior in x direction is mainly related to sequence direction, but mask registration in y direction would be highly impacted by pattern density distribution map. It proves part of mask registration error is due to charge issue from nearby environment. If exposure sequence is chip by chip for normal multi chip layout case, mask registration of both x and y direction would be impacted analogously, which has also been proved by real data. Therefore, we try to set up a simple model to predict the mask registration error based on mask exposure map, and correct it with the given POSCOR (position correction) file for advanced mask writing if needed.

Automatic pattern localization across layout database and photolithography mask

NASA Astrophysics Data System (ADS)

Morey, Philippe; Brault, Frederic; Beisser, Eric; Ache, Oliver; Röth, Klaus-Dieter

2016-03-01

Advanced process photolithography masks require more and more controls for registration versus design and critical dimension uniformity (CDU). The distribution of the measurement points should be distributed all over the whole mask and may be denser in areas critical to wafer overlay requirements. This means that some, if not many, of theses controls should be made inside the customer die and may use non-dedicated patterns. It is then mandatory to access the original layout database to select patterns for the metrology process. Finding hundreds of relevant patterns in a database containing billions of polygons may be possible, but in addition, it is mandatory to create the complete metrology job fast and reliable. Combining, on one hand, a software expertise in mask databases processing and, on the other hand, advanced skills in control and registration equipment, we have developed a Mask Dataprep Station able to select an appropriate number of measurement targets and their positions in a huge database and automatically create measurement jobs on the corresponding area on the mask for the registration metrology system. In addition, the required design clips are generated from the database in order to perform the rendering procedure on the metrology system. This new methodology has been validated on real production line for the most advanced process. This paper presents the main challenges that we have faced, as well as some results on the global performances.

Joint optimization of source, mask, and pupil in optical lithography

NASA Astrophysics Data System (ADS)

Li, Jia; Lam, Edmund Y.

2014-03-01

Mask topography effects need to be taken into consideration for more advanced resolution enhancement techniques in optical lithography. However, rigorous 3D mask model achieves high accuracy at a large computational cost. This work develops a combined source, mask and pupil optimization (SMPO) approach by taking advantage of the fact that pupil phase manipulation is capable of partially compensating for mask topography effects. We first design the pupil wavefront function by incorporating primary and secondary spherical aberration through the coefficients of the Zernike polynomials, and achieve optimal source-mask pair under the condition of aberrated pupil. Evaluations against conventional source mask optimization (SMO) without incorporating pupil aberrations show that SMPO provides improved performance in terms of pattern fidelity and process window sizes.

Low surface energy polymeric release coating for improved contact print lithography

NASA Astrophysics Data System (ADS)

Mancini, David P.; Resnick, Douglas J.; Gehoski, Kathleen A.; Popovich, Laura L.; Chang, Daniel

2002-03-01

Contact printing has been used for decades in many various lithography applications in the microelectronic industry. While vacuum contact printing processes offer sub-micron resolution and high throughput, they often suffer from some important drawbacks. One of the most common problems is degradation in both resolution and defect density which occurs when the same mask si used for multiple exposures without frequent mask cleans. This is largely due to the relatively high surface energy of both quartz and chrome and the tendency of most photoresists to adhere to these surfaces. As a result, when a mask and wafer are pressed into intimate contact, resist will tend to stick to the mask creating a defect on the wafer, effectively propagating defects to subsequent wafers. In this study, DuPont Teflon AF 1601S is used as a photomask coating and evaluated for its ability to act as a release agent and reduce defects while maintaining resolution for multiple exposures. Teflon AF is an amorphous, transparent, low surface energy, polymeric material that can be spin coated into a thin conformal film. Tests have shown that when using an uncoated mask in vacuum contact, resolution of 0.75 micrometers dense lines is severely degraded after less than 10 consecutive exposures. However, when the mask is coated, 0.75 micrometers dense lines were successfully resolved using vacuum contact for over 200 exposures without cleaning. In addition, it has been demonstrated that Teflon AF coatings impart to a mask a self-cleaning capability, since particles tend to stick to the photoresist rather than the mask. A coated mask, which was purposefully contaminated with particulates, resolved 0.75 micrometers dense lines on all but the first wafer of a series of 25 consecutive exposures. The patented mask releases layer process has successfully been demonstrated with a positive novolak resist. Additional data which describes the system chemistry, dilution and coating process, and film morphology are also presented.

Electron-beam Induced Processes and their Applicability to Mask Repair

NASA Astrophysics Data System (ADS)

Boegli, Volker A.; Koops, Hans W. P.; Budach, Michael; Edinger, Klaus; Hoinkis, Ottmar; Weyrauch, Bernd; Becker, Rainer; Schmidt, Rudolf; Kaya, Alexander; Reinhardt, Andreas; Braeuer, Stephan; Honold, Heinz; Bihr, Johannes; Greiser, Jens; Eisenmann, Michael

2002-12-01

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

Communication masking in marine mammals: A review and research strategy.

PubMed

Erbe, Christine; Reichmuth, Colleen; Cunningham, Kane; Lucke, Klaus; Dooling, Robert

2016-02-15

Underwater noise, whether of natural or anthropogenic origin, has the ability to interfere with the way in which marine mammals receive acoustic signals (i.e., for communication, social interaction, foraging, navigation, etc.). This phenomenon, termed auditory masking, has been well studied in humans and terrestrial vertebrates (in particular birds), but less so in marine mammals. Anthropogenic underwater noise seems to be increasing in parts of the world's oceans and concerns about associated bioacoustic effects, including masking, are growing. In this article, we review our understanding of masking in marine mammals, summarise data on marine mammal hearing as they relate to masking (including audiograms, critical ratios, critical bandwidths, and auditory integration times), discuss masking release processes of receivers (including comodulation masking release and spatial release from masking) and anti-masking strategies of signalers (e.g. Lombard effect), and set a research framework for improved assessment of potential masking in marine mammals. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

Modeling of thermomechanical changes of extreme-ultraviolet mask and their dependence on absorber variation

NASA Astrophysics Data System (ADS)

Ban, Chung-Hyun; Park, Eun-Sang; Park, Jae-Hun; Oh, Hye-Keun

2018-06-01

Thermal and structural deformation of extreme-ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness requirements. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the masks rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. The use of very thick low-thermal-expansion substrate materials (LTEMs) may reduce energy absorption, but they do not completely eliminate mask deformation. Therefore, it is necessary to predict and optimize the effects of energy transferred from the extreme-ultraviolet (EUV) light source and the resultant patterns of structured EUV masks with complex multilayers. Our study shows that heat accumulates in the masks as exposure progresses. It has been found that a higher absorber ratio (pattern density) applied to the patterning of EUV masks exacerbates the problem, especially in masks with more complex patterns.

Implicit Semantic Perception in Object Substitution Masking

ERIC Educational Resources Information Center

Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

2011-01-01

Decades of research on visual perception has uncovered many phenomena, such as binocular rivalry, backward masking, and the attentional blink, that reflect "failures of consciousness". Although stimuli do not reach awareness in these paradigms, there is evidence that they nevertheless undergo semantic processing. Object substitution masking (OSM),…

Phonological-Lexical Feedback during Early Abstract Encoding: The Case of Deaf Readers

PubMed Central

Perea, Manuel; Marcet, Ana; Vergara-Martínez, Marta

2016-01-01

In the masked priming technique, physical identity between prime and target enjoys an advantage over nominal identity in nonwords (GEDA-GEDA faster than geda-GEDA). However, nominal identity overrides physical identity in words (e.g., REAL-REAL similar to real-REAL). Here we tested whether the lack of an advantage of the physical identity condition for words was due to top-down feedback from phonological-lexical information. We examined this issue with deaf readers, as their phonological representations are not as fully developed as in hearing readers. Results revealed that physical identity enjoyed a processing advantage over nominal identity not only in nonwords but also in words (GEDA-GEDA faster than geda-GEDA; REAL-REAL faster than real-REAL). This suggests the existence of fundamental differences in the early stages of visual word recognition of hearing and deaf readers, possibly related to the amount of feedback from higher levels of information. PMID:26731110

Simple technique for high-throughput marking of distinguishable micro-areas for microscopy.

PubMed

Henrichs, Leonard F; Chen, L I; Bell, Andrew J

2016-04-01

Today's (nano)-functional materials, usually exhibiting complex physical properties require local investigation with different microscopy techniques covering different physical aspects such as dipolar and magnetic structure. However, often these must be employed on the very same sample position to be able to truly correlate those different information and corresponding properties. This can be very challenging if not impossible especially when samples lack prominent features for orientation. Here, we present a simple but effective method to mark hundreds of approximately 15×15 μm sample areas at one time by using a commercial transmission electron microscopy grid as shadow mask in combination with thin-film deposition. Areas can be easily distinguished when using a reference or finder grid structure as shadow mask. We show that the method is suitable to combine many techniques such as light microscopy, scanning probe microscopy and scanning electron microscopy. Furthermore, we find that best results are achieved when depositing aluminium on a flat sample surface using electron-beam evaporation which ensures good line-of-sight deposition. This inexpensive high-throughput method has several advantageous over other marking techniques such as focused ion-beam processing especially when batch processing or marking of many areas is required. Nevertheless, the technique could be particularly valuable, when used in junction with, for example focused ion-beam sectioning to obtain a thin lamellar of a particular pre-selected area. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

First 65nm tape-out using inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Hung, Chi-Yuan; Zhang, Bin; Tang, Deming; Guo, Eric; Pang, Linyong; Liu, Yong; Moore, Andrew; Wang, Kechang

2005-11-01

This paper presents SMIC's first 65nm tape out results, in particularly, using ILT. ILT mathematically determines the mask features that produce the desired on-wafer results with best wafer pattern fidelity, largest process window or both. SMIC applied it to its first 65nm tape-out to study ILT performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first test case, because SRAM bit-cells contain features which are challenging lithographically. Mask patterns generated from both conventional OPC and ILT were placed on the mask side-by-side. Mask manufacturability (including fracturing, writing time, inspection, and metrology) and wafer print performance of ILT were studied. The results demonstrated that ILT achieved better CD accuracy, produced substantially larger process window than conventional OPC, and met SMIC's 65nm process window requirements.

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOEpatents

Li, Ting [Ventura, CA

2011-04-26

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Multiple beam mask writers: an industry solution to the write time crisis

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.

2010-09-01

The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

Vector scattering analysis of TPF coronagraph pupil masks

NASA Astrophysics Data System (ADS)

Ceperley, Daniel P.; Neureuther, Andrew R.; Lieber, Michael D.; Kasdin, N. Jeremy; Shih, Ta-Ming

2004-10-01

Rigorous finite-difference time-domain electromagnetic simulation is used to simulate the scattering from proto-typical pupil mask cross-section geometries and to quantify the differences from the normally assumed ideal on-off behavior. Shaped pupil plane masks are a promising technology for the TPF coronagraph mission. However the stringent requirements placed on the optics require that the detailed behavior of the edge-effects of these masks be examined carefully. End-to-end optical system simulation is essential and an important aspect is the polarization and cross-section dependent edge-effects which are the subject of this paper. Pupil plane masks are similar in many respects to photomasks used in the integrated circuit industry. Simulation capabilities such as the FDTD simulator, TEMPEST, developed for analyzing polarization and intensity imbalance effects in nonplanar phase-shifting photomasks, offer a leg-up in analyzing coronagraph masks. However, the accuracy in magnitude and phase required for modeling a chronograph system is extremely demanding and previously inconsequential errors may be of the same order of magnitude as the physical phenomena under study. In this paper, effects of thick masks, finite conductivity metals, and various cross-section geometries on the transmission of pupil-plane masks are illustrated. Undercutting the edge shape of Cr masks improves the effective opening width to within λ/5 of the actual opening but TE and TM polarizations require opposite compensations. The deviation from ideal is examined at the reference plane of the mask opening. Numerical errors in TEMPEST, such as numerical dispersion, perfectly matched layer reflections, and source haze are also discussed along with techniques for mitigating their impacts.

New method of 2-dimensional metrology using mask contouring

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Yamagata, Yoshikazu; Sugiyama, Akiyuki; Toyoda, Yasutaka

2008-10-01

We have developed a new method of accurately profiling and measuring of a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, this edge detection method is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. This method realizes two-dimensional metrology for refined pattern that had been difficult to measure conventionally by utilizing high precision contour profile. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. This is to say, demands for quality is becoming strenuous because of enormous quantity of data growth with increasing of refined pattern on photo mask manufacture. In the result, massive amount of simulated error occurs on mask inspection that causes lengthening of mask production and inspection period, cost increasing, and long delivery time. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method of a DFM solution using two-dimensional metrology for refined pattern.

Modeling Spatial and Temporal Aspects of Visual Backward Masking

ERIC Educational Resources Information Center

Hermens, Frouke; Luksys, Gediminas; Gerstner, Wulfram; Herzog, Michael H.; Ernst, Udo

2008-01-01

Visual backward masking is a versatile tool for understanding principles and limitations of visual information processing in the human brain. However, the mechanisms underlying masking are still poorly understood. In the current contribution, the authors show that a structurally simple mathematical model can explain many spatial and temporal…

Masked Repetition Priming Treatment for Anomia

ERIC Educational Resources Information Center

Silkes, JoAnn P.

2018-01-01

Purpose: Masked priming has been suggested as a way to directly target implicit lexical retrieval processes in aphasia. This study was designed to investigate repeated use of masked repetition priming to improve picture naming in individuals with anomia due to aphasia. Method: A single-subject, multiple-baseline design was used across 6 people…

Early, Equivalent ERP Masked Priming Effects for Regular and Irregular Morphology

ERIC Educational Resources Information Center

Morris, Joanna; Stockall, Linnaea

2012-01-01

Converging evidence from behavioral masked priming (Rastle & Davis, 2008), EEG masked priming (Morris, Frank, Grainger, & Holcomb, 2007) and single word MEG (Zweig & Pylkkanen, 2008) experiments has provided robust support for a model of lexical processing which includes an early, automatic, visual word form based stage of morphological parsing…

Sandwich masking eliminates both visual awareness of faces and face-specific brain activity through a feedforward mechanism.

PubMed

Harris, Joseph A; Wu, Chien-Te; Woldorff, Marty G

2011-06-07

It is generally agreed that considerable amounts of low-level sensory processing of visual stimuli can occur without conscious awareness. On the other hand, the degree of higher level visual processing that occurs in the absence of awareness is as yet unclear. Here, event-related potential (ERP) measures of brain activity were recorded during a sandwich-masking paradigm, a commonly used approach for attenuating conscious awareness of visual stimulus content. In particular, the present study used a combination of ERP activation contrasts to track both early sensory-processing ERP components and face-specific N170 ERP activations, in trials with versus without awareness. The electrophysiological measures revealed that the sandwich masking abolished the early face-specific N170 neural response (peaking at ~170 ms post-stimulus), an effect that paralleled the abolition of awareness of face versus non-face image content. Furthermore, however, the masking appeared to render a strong attenuation of earlier feedforward visual sensory-processing signals. This early attenuation presumably resulted in insufficient information being fed into the higher level visual system pathways specific to object category processing, thus leading to unawareness of the visual object content. These results support a coupling of visual awareness and neural indices of face processing, while also demonstrating an early low-level mechanism of interference in sandwich masking.

Fast releasing oral electrospun PVP/CD nanofiber mats of taste-masked meloxicam.

PubMed

Samprasit, Wipada; Akkaramongkolporn, Prasert; Ngawhirunpat, Tanasait; Rojanarata, Theerasak; Kaomongkolgit, Ruchadaporn; Opanasopit, Praneet

2015-06-20

Fast release and taste masking of meloxicam (MX)-loaded polyvinylpyrrolidone (PVP)/cyclodextrin (CD) nanofiber mats were developed using an electrospinning process. CDs were blended to improve the stability of the mats. The morphology and diameter of the mats were determined using scanning electron microscopy (SEM); physical and mechanical properties were also studied. The MX content, disintegration time, MX release and cytotoxicity of the mats were investigated. In vivo studies were also performed in healthy human volunteers. The results indicated that the mats were successfully prepared with fiber in the nanometer range. MX was well incorporated into the mats, with an amorphous form. The mats showed suitable tensile strength. CDs improved the physical stability by their cage-like supramolecular structure to protect from humidity and moisture, and create bead free nanofiber mats. The nanofiber mats with CDs were physically stable without any hygroscopicity and fusion. A fast disintegration and release of MX was achieved. Moreover, this mat released MX faster than the MX powder and commercial tablets. The cytotoxicity test revealed that mats were safe for a 5-min incubation. The disintegration studies indicated that in vivo disintegration agreed with the in vitro studies; the mat rapidly disintegrated in the mouth. The less bitter of MX was occurred in the mats that incorporated CD, menthol and aspartame. In addition, this mat was physical stable for 6 months. The results suggest that these mats may be a good candidate for fast dissolving drug delivery systems of bitter drugs to increase the palatability of dosage forms. Copyright © 2015 Elsevier B.V. All rights reserved.

Active-duty military service members’ visual representations of PTSD and TBI in masks

PubMed Central

Walker, Melissa S.; Kaimal, Girija; Gonzaga, Adele M. L.; Myers-Coffman, Katherine A.; DeGraba, Thomas J.

2017-01-01

ABSTRACT Active-duty military service members have a significant risk of sustaining physical and psychological trauma resulting in traumatic brain injury (TBI) and post-traumatic stress disorder (PTSD). Within an interdisciplinary treatment approach at the National Intrepid Center of Excellence, service members participated in mask making during art therapy sessions. This study presents an analysis of the mask-making experiences of service members (n = 370) with persistent symptoms from combat- and mission-related TBI, PTSD, and other concurrent mood issues. Data sources included mask images and therapist notes collected over a five-year period. The data were coded and analyzed using grounded theory methods. Findings indicated that mask making offered visual representations of the self related to individual personhood, relationships, community, and society. Imagery themes referenced the injury, relational supports/losses, identity transitions/questions, cultural metaphors, existential reflections, and conflicted sense of self. These visual insights provided an increased understanding of the experiences of service members, facilitating their recovery. PMID:28452610

Active-duty military service members' visual representations of PTSD and TBI in masks.

PubMed

Walker, Melissa S; Kaimal, Girija; Gonzaga, Adele M L; Myers-Coffman, Katherine A; DeGraba, Thomas J

2017-12-01

Active-duty military service members have a significant risk of sustaining physical and psychological trauma resulting in traumatic brain injury (TBI) and post-traumatic stress disorder (PTSD). Within an interdisciplinary treatment approach at the National Intrepid Center of Excellence, service members participated in mask making during art therapy sessions. This study presents an analysis of the mask-making experiences of service members (n = 370) with persistent symptoms from combat- and mission-related TBI, PTSD, and other concurrent mood issues. Data sources included mask images and therapist notes collected over a five-year period. The data were coded and analyzed using grounded theory methods. Findings indicated that mask making offered visual representations of the self related to individual personhood, relationships, community, and society. Imagery themes referenced the injury, relational supports/losses, identity transitions/questions, cultural metaphors, existential reflections, and conflicted sense of self. These visual insights provided an increased understanding of the experiences of service members, facilitating their recovery.

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Backward masked fearful faces enhance contralateral occipital cortical activity for visual targets within the spotlight of attention

PubMed Central

Reinke, Karen S.; LaMontagne, Pamela J.; Habib, Reza

2011-01-01

Spatial attention has been argued to be adaptive by enhancing the processing of visual stimuli within the ‘spotlight of attention’. We previously reported that crude threat cues (backward masked fearful faces) facilitate spatial attention through a network of brain regions consisting of the amygdala, anterior cingulate and contralateral visual cortex. However, results from previous functional magnetic resonance imaging (fMRI) dot-probe studies have been inconclusive regarding a fearful face-elicited contralateral modulation of visual targets. Here, we tested the hypothesis that the capture of spatial attention by crude threat cues would facilitate processing of subsequently presented visual stimuli within the masked fearful face-elicited ‘spotlight of attention’ in the contralateral visual cortex. Participants performed a backward masked fearful face dot-probe task while brain activity was measured with fMRI. Masked fearful face left visual field trials enhanced activity for spatially congruent targets in the right superior occipital gyrus, fusiform gyrus and lateral occipital complex, while masked fearful face right visual field trials enhanced activity in the left middle occipital gyrus. These data indicate that crude threat elicited spatial attention enhances the processing of subsequent visual stimuli in contralateral occipital cortex, which may occur by lowering neural activation thresholds in this retinotopic location. PMID:20702500

Statistical mechanics of image processing by digital halftoning

NASA Astrophysics Data System (ADS)

Inoue, Jun-Ichi; Norimatsu, Wataru; Saika, Yohei; Okada, Masato

2009-03-01

We consider the problem of digital halftoning (DH). The DH is an image processing representing each grayscale in images in terms of black and white dots, and it is achieved by making use of the threshold dither mask, namely, each pixel is determined as black if the grayscale pixel is greater than or equal to the mask value and as white vice versa. To determine the mask for a given grayscale image, we assume that human-eyes might recognize the BW dots as the corresponding grayscale by linear filters. Then, the Hamiltonian is constructed as a distance between the original and recognized images which is written in terms of the mask. Finding the ground state of the Hamiltonian via deterministic annealing, we obtain the optimal mask and the BW dots simultaneously. From the spectrum analysis, we find that the BW dots are desirable from the view point of human-eyes modulation properties. We also show that the lower bound of the mean square error for the inverse process of the DH is minimized on the Nishimori line which is well-known in the research field of spin glasses.

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask

NASA Technical Reports Server (NTRS)

Morrison, Andrew D. (Inventor); Daud, Taher (Inventor)

1986-01-01

A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.

Ion beam deposition system for depositing low defect density extreme ultraviolet mask blanks

NASA Astrophysics Data System (ADS)

Jindal, V.; Kearney, P.; Sohn, J.; Harris-Jones, J.; John, A.; Godwin, M.; Antohe, A.; Teki, R.; Ma, A.; Goodwin, F.; Weaver, A.; Teora, P.

2012-03-01

Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 22 nm node and beyond. EUVL requires a low defect density reflective mask blank, which is considered to be one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction in EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that is currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH's current research is focused on in-house tool components to reduce their contributions to mask blank defects. SEMATECH is also working closely with the supplier to incorporate this learning into a next-generation deposition tool. This paper will describe requirements for the next-generation tool that are essential to realize low defect density EUV mask blanks. The goal of our work is to enable model-based predictions of defect performance and defect improvement for targeted process improvement and component learning to feed into the new deposition tool design. This paper will also highlight the defect reduction resulting from process improvements and the restrictions inherent in the current tool geometry and components that are an impediment to meeting HVM quality EUV mask blanks will be outlined.

Time-Frequency Masking for Speech Separation and Its Potential for Hearing Aid Design

PubMed Central

Wang, DeLiang

2008-01-01

A new approach to the separation of speech from speech-in-noise mixtures is the use of time-frequency (T-F) masking. Originated in the field of computational auditory scene analysis, T-F masking performs separation in the time-frequency domain. This article introduces the T-F masking concept and reviews T-F masking algorithms that separate target speech from either monaural or binaural mixtures, as well as microphone-array recordings. The review emphasizes techniques that are promising for hearing aid design. This article also surveys recent studies that evaluate the perceptual effects of T-F masking techniques, particularly their effectiveness in improving human speech recognition in noise. An assessment is made of the potential benefits of T-F masking methods for the hearing impaired in light of the processing constraints of hearing aids. Finally, several issues pertinent to T-F masking are discussed. PMID:18974204

Fabrication of rectangular cross-sectional microchannels on PMMA with a CO2 laser and underwater fabricated copper mask

NASA Astrophysics Data System (ADS)

Prakash, Shashi; Kumar, Subrata

2017-09-01

CO2 lasers are commonly used for fabricating polymer based microfluidic devices. Despite several key advantages like low cost, time effectiveness, easy to operate and no requirement of clean room facility, CO2 lasers suffer from few disadvantages like thermal bulging, improper dimensional control, difficulty to produce microchannels of other than Gaussian cross sectional shapes and inclined surface walls. Many microfluidic devices require square or rectangular cross-sections which are difficult to produce using normal CO2 laser procedures. In this work, a thin copper sheet of 40 μm was used as a mask above the PMMA (Polymethyl-methacrylate) substrate while fabricating the microchannels utilizing the raster scanning feature of the CO2 lasers. Microchannels with different width dimensions were fabricated utilizing a CO2 laser in with mask and without-mask conditions. A comparison of both the fabricating process has been made. It was found that microchannels with U shape cross section and rectangular cross-section can efficiently be produced using the with mask technique. In addition to this, this technique can provide perfect dimensional control and better surface quality of the microchannel walls. Such a microchannel fabrication process do not require any post-processing. The fabrication of mask using a nanosecond fiber laser has been discussed in details. An underwater laser fabrication method was adopted to overcome heat related defects in mask preparation. Overall, the technique was found to be easy to adopt and significant improvements were observed in microchannel fabrication.

Application of the unified mask data format based on OASIS for VSB EB writers

NASA Astrophysics Data System (ADS)

Suzuki, Toshio; Hirumi, Junji; Suga, Osamu

2005-11-01

Mask data preparation (MDP) for modern mask manufacturing becomes a complex process because many kinds of EB data formats are used in mask makers and EB data files continue to become bigger by the application of RET. Therefore we developed a unified mask pattern data format named "OASIS.VSB1" and a job deck format named "MALY2" for Variable-Shaped-Beam (VSB) EB writers. OASIS.VSB is the mask pattern data format based on OASISTM 3 (Open Artwork System Interchange Standard) released as a successive format to GDSII by SEMI. We defined restrictions on OASIS for VSB EB writers to input OASIS.VSB data directly to VSB EB writers just like the native EB data. OASIS.VSB specification and MALY specification have been disclosed to the public and will become a SEMI standard in the near future. We started to promote the spread activities of OASIS.VSB and MALY. For practical use of OASIS.VSB and MALY, we are discussing the infrastructure system of MDP processing using OASIS.VSB and MALY with mask makers, VSB EB makers, and device makers. We are also discussing the tools for the infrastructure system with EDA vendors. The infrastructure system will enable TAT, the man-hour, and the cost in MDP to be reduced. In this paper, we propose the plan of the infrastructure system of MDP processing using OASIS.VSB and MALY as an application of OASIS.VSB and MALY.

Less is More: Neural Activity During Very Brief and Clearly Visible Exposure to Phobic Stimuli

PubMed Central

Siegel, Paul; Warren, Richard; Wang, Zhishun; Yang, Jie; Cohen, Don; Anderson, Jason F.; Murray, Lilly; Peterson, Bradley S.

2017-01-01

Research on automatic processes in emotion has focused almost exclusively on the provocation of fear responses. We have shown, in contrast, that the repeated presentation of masked feared images reduces avoidance of a live tarantula by spider-phobic participants. We investigated the neural basis for these adaptive effects of masked exposure. We identified 21 spider-phobic and 21 control participants using a psychiatric interview, fear questionnaire, and approach behavior towards a live tarantula. They received each of three conditions: (1) very brief exposure (VBE) to masked images of spiders; (2) clearly visible exposure (CVE) to spiders; and (3) masked images of flowers (control). Only VBE to masked spiders generated neural activity more strongly in phobic than in control participants, within subcortical fear, attention, higher-order language, and vision systems. Counter-intuitively, CVE to the same spiders generated stronger neural activity in control rather than phobic participants within these and other systems. VBE activated regions that support fear processing in phobic participants without causing them to experience fear consciously. CVE, by contrast, deactivated regions supporting fear regulation and caused phobic participants to experience fear. Activations by CVE to spiders correlated with fear ratings - explicit fear. Activations by VBE to masked spiders correlated with color-naming interference of spider words – implicit fear. These multiple dissociations between the effects of VBE and CVE to spiders suggest that limiting awareness of exposure to phobic stimuli through visual masking paradoxically facilitates their processing, while simultaneously minimizing the experience of fear. PMID:28165171

Polar synthetic imaging

NASA Astrophysics Data System (ADS)

George, Jonathan K.

2013-05-01

In the search for low-cost wide spectrum imagers it may become necessary to sacrifice the expense of the focal plane array and revert to a scanning methodology. In many cases the sensor may be too unwieldy to physically scan and mirrors may have adverse effects on particular frequency bands. In these cases, photonic masks can be devised to modulate the incoming light field with a code over time. This is in essence code-division multiplexing of the light field into a lower dimension channel. In this paper a simple method for modulating the light field with masks of the Archimedes' spiral is presented and a mathematical model of the two-dimensional mask set is developed.

The effect of foveal and parafoveal masks on the eye movements of older and younger readers.

PubMed

Rayner, Keith; Yang, Jinmian; Schuett, Susanne; Slattery, Timothy J

2014-06-01

In the present study, we examined foveal and parafoveal processing in older compared with younger readers by using gaze-contingent paradigms with 4 conditions. Older and younger readers read sentences in which the text was either a) presented normally, b) the foveal word was masked as soon as it was fixated, c) all of the words to the left of the fixated word were masked, or d) all of the words to the right of the fixated word were masked. Although older and younger readers both found reading when the fixated word was masked quite difficult, the foveal mask increased sentence reading time more than 3-fold (3.4) for the older readers (in comparison with the control condition in which the sentence was presented normally) compared with the younger readers who took 1.3 times longer to read sentences in the foveal mask condition (in comparison with the control condition). The left and right parafoveal masks did not disrupt reading as severely as the foveal mask, though the right mask was more disruptive than the left mask. Also, there was some indication that the younger readers found the right mask condition relatively more disruptive than the left mask condition. PsycINFO Database Record (c) 2014 APA, all rights reserved.

Robust source and mask optimization compensating for mask topography effects in computational lithography.

PubMed

Li, Jia; Lam, Edmund Y

2014-04-21

Mask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal source-mask pair under the condition of aberrated pupil. We also use a statistical model to determine the Zernike coefficients for the phase control and adjustment. Rigorous simulations of thick masks show that this approach provides compensation for mask topography effects by improving the pattern fidelity and increasing uDOF.

ArF halftone PSM cleaning process optimization for next-generation lithography

NASA Astrophysics Data System (ADS)

Son, Yong-Seok; Jeong, Seong-Ho; Kim, Jeong-Bae; Kim, Hong-Seok

2000-07-01

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

SMIF capability at Intel Mask Operation improves yield

NASA Astrophysics Data System (ADS)

Dam, Thuc H.; Pekny, Matt; Millino, Jim; Luu, Gibson; Melwani, Nitesh; Venkatramani, Aparna; Tavassoli, Malahat

2003-08-01

At Intel Mask Operations (IMO), Standard Mechanical Interface (SMIF) processing has been employed to reduce environmental particle contamination from manual handling-related activities. SMIF handling entailed the utilization of automated robotic transfers of photoblanks/reticles between SMIF pods, whereas conventional handling utilized manual pick transfers of masks between SMIF pods with intermediate storage in Toppan compacts. The SMIF-enabling units in IMO's process line included: (1) coater, (2) exposure, (3) developer, (4) dry etcher, and (5) inspection. Each unit is equipped with automated I/O port, environmentally enclosed processing chamber, and SMIF pods. Yield metrics were utilized to demonstrate the effectiveness and advantages of SMIF processing compared to manual processing. The areas focused in this paper were blank resist coating, binary front-end reticle processing and 2nd level PSM reticle processing. Results obtained from the investigation showed yield improvements in these areas.

Cycle time reduction by Html report in mask checking flow

NASA Astrophysics Data System (ADS)

Chen, Jian-Cheng; Lu, Min-Ying; Fang, Xiang; Shen, Ming-Feng; Ma, Shou-Yuan; Yang, Chuen-Huei; Tsai, Joe; Lee, Rachel; Deng, Erwin; Lin, Ling-Chieh; Liao, Hung-Yueh; Tsai, Jenny; Bowhill, Amanda; Vu, Hien; Russell, Gordon

2017-07-01

The Mask Data Correctness Check (MDCC) is a reticle-level, multi-layer DRC-like check evolved from mask rule check (MRC). The MDCC uses extended job deck (EJB) to achieve mask composition and to perform a detailed check for positioning and integrity of each component of the reticle. Different design patterns on the mask will be mapped to different layers. Therefore, users may be able to review the whole reticle and check the interactions between different designs before the final mask pattern file is available. However, many types of MDCC check results, such as errors from overlapping patterns usually have very large and complex-shaped highlighted areas covering the boundary of the design. Users have to load the result OASIS file and overlap it to the original database that was assembled in MDCC process on a layout viewer, then search for the details of the check results. We introduce a quick result-reviewing method based on an html format report generated by Calibre® RVE. In the report generation process, we analyze and extract the essential part of result OASIS file to a result database (RDB) file by standard verification rule format (SVRF) commands. Calibre® RVE automatically loads the assembled reticle pattern and generates screen shots of these check results. All the processes are automatically triggered just after the MDCC process finishes. Users just have to open the html report to get the information they need: for example, check summary, captured images of results and their coordinates.

System and methods for determining masking signals for applying empirical mode decomposition (EMD) and for demodulating intrinsic mode functions obtained from application of EMD

DOEpatents

Senroy, Nilanjan [New Delhi, IN; Suryanarayanan, Siddharth [Littleton, CO

2011-03-15

A computer-implemented method of signal processing is provided. The method includes generating one or more masking signals based upon a computed Fourier transform of a received signal. The method further includes determining one or more intrinsic mode functions (IMFs) of the received signal by performing a masking-signal-based empirical mode decomposition (EMD) using the at least one masking signal.

Do different perceptual task sets modulate electrophysiological correlates of masked visuomotor priming? Attention to shape and color put to the test.

PubMed

Zovko, Monika; Kiefer, Markus

2013-02-01

According to classical theories, automatic processes operate independently of attention. Recent evidence, however, shows that masked visuomotor priming, an example of an automatic process, depends on attention to visual form versus semantics. In a continuation of this approach, we probed feature-specific attention within the perceptual domain and tested in two event-related potential (ERP) studies whether masked visuomotor priming in a shape decision task specifically depends on attentional sensitization of visual pathways for shape in contrast to color. Prior to the masked priming procedure, a shape or a color decision task served to induce corresponding task sets. ERP analyses revealed visuomotor priming effects over the occipitoparietal scalp only after the shape, but not after the color induction task. Thus, top-down control coordinates automatic processing streams in congruency with higher-level goals even at a fine-grained level. Copyright © 2012 Society for Psychophysiological Research.

EUVL mask patterning with blanks from commercial suppliers

NASA Astrophysics Data System (ADS)

Yan, Pei-Yang; Zhang, Guojing; Nagpal, Rajesh; Shu, Emily Y.; Li, Chaoyang; Qu, Ping; Chen, Frederick T.

2004-12-01

Extreme Ultraviolet Lithography (EUVL) reflective mask blank development includes low thermal expansion material fabrication, mask substrate finishing, reflective multi-layer (ML) and capping layer deposition, buffer (optional)/absorber stack deposition, EUV specific metrology, and ML defect inspection. In the past, we have obtained blanks deposited with various layer stacks from several vendors. Some of them are not commercial suppliers. As a result, the blank and patterned mask qualities are difficult to maintain and improve. In this paper we will present the evaluation results of the EUVL mask pattering processes with the complete EUVL mask blanks supplied by the commercial blank supplier. The EUVL mask blanks used in this study consist of either quartz or ULE substrates which is a type of low thermal expansion material (LTEM), 40 pairs of molybdenum/silicon (Mo/Si) ML layer, thin ruthenium (Ru) capping layer, tantalum boron nitride (TaBN) absorber, and chrome (Cr) backside coating. No buffer layer is used. Our study includes the EUVL mask blank characterization, patterned EUVL mask characterization, and the final patterned EUVL mask flatness evaluation.

Near-field photochemical and radiation-induced chemical fabrication of nanopatterns of a self-assembled silane monolayer

PubMed Central

Hentschel, Carsten; Fontein, Florian; Stegemann, Linda; Hoeppener, Christiane; Fuchs, Harald; Hoeppener, Stefanie

2014-01-01

Summary A general concept for parallel near-field photochemical and radiation-induced chemical processes for the fabrication of nanopatterns of a self-assembled monolayer (SAM) of (3-aminopropyl)triethoxysilane (APTES) is explored with three different processes: 1) a near-field photochemical process by photochemical bleaching of a monomolecular layer of dye molecules chemically bound to an APTES SAM, 2) a chemical process induced by oxygen plasma etching as well as 3) a combined near-field UV-photochemical and ozone-induced chemical process, which is applied directly to an APTES SAM. All approaches employ a sandwich configuration of the surface-supported SAM, and a lithographic mask in form of gold nanostructures fabricated through colloidal sphere lithography (CL), which is either exposed to visible light, oxygen plasma or an UV–ozone atmosphere. The gold mask has the function to inhibit the photochemical reactions by highly localized near-field interactions between metal mask and SAM and to inhibit the radiation-induced chemical reactions by casting a highly localized shadow. The removal of the gold mask reveals the SAM nanopattern. PMID:25247126

Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

NASA Technical Reports Server (NTRS)

1982-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

The STARD statement for reporting diagnostic accuracy studies: application to the history and physical examination.

PubMed

Simel, David L; Rennie, Drummond; Bossuyt, Patrick M M

2008-06-01

The Standards for Reporting of Diagnostic Accuracy (STARD) statement provided guidelines for investigators conducting diagnostic accuracy studies. We reviewed each item in the statement for its applicability to clinical examination diagnostic accuracy research, viewing each discrete aspect of the history and physical examination as a diagnostic test. Nonsystematic review of the STARD statement. Two former STARD Group participants and 1 editor of a journal series on clinical examination research reviewed each STARD item. Suggested interpretations and comments were shared to develop consensus. The STARD Statement applies generally well to clinical examination diagnostic accuracy studies. Three items are the most important for clinical examination diagnostic accuracy studies, and investigators should pay particular attention to their requirements: describe carefully the patient recruitment process, describe participant sampling and address if patients were from a consecutive series, and describe whether the clinicians were masked to the reference standard tests and whether the interpretation of the reference standard test was masked to the clinical examination components or overall clinical impression. The consideration of these and the other STARD items in clinical examination diagnostic research studies would improve the quality of investigations and strengthen conclusions reached by practicing clinicians. The STARD statement provides a very useful framework for diagnostic accuracy studies. The group correctly anticipated that there would be nuances applicable to studies of the clinical examination. We offer guidance that should enhance their usefulness to investigators embarking on original studies of a patient's history and physical examination.

Coherent optical processing using noncoherent light after source masking.

PubMed

Boopathi, V; Vasu, R M

1992-01-10

Coherent optical processing starting with spatially noncoherent illumination is described. Good spatial coherence is introduced in the far field by modulating a noncoherent source when masks with sharp autocorrelation are used. The far-field mutual coherence function of light is measured and it is seen that, for the masks and the source size used here, we get a fairly large area over which the mutual coherence function is high and flat. We demonstrate traditional coherent processing operations such as Fourier transformation and image deblurring when coherent light that is produced in the above fashion is used. A coherence-redundancy merit function is defined for this type of processing system. It is experimentally demonstrated that the processing system introduced here has superior blemish tolerance compared with a traditional processor that uses coherent illumination.

Improving the CD linearity and proximity performance of photomasks written on the Sigma7500-II DUV laser writer through embedded OPC

NASA Astrophysics Data System (ADS)

Österberg, Anders; Ivansen, Lars; Beyerl, Angela; Newman, Tom; Bowhill, Amanda; Sahouria, Emile; Schulze, Steffen

2007-10-01

Optical proximity correction (OPC) is widely used in wafer lithography to produce a printed image that best matches the design intent while optimizing CD control. OPC software applies corrections to the mask pattern data, but in general it does not compensate for the mask writer and mask process characteristics. The Sigma7500-II deep-UV laser mask writer projects the image of a programmable spatial light modulator (SLM) using partially coherent optics similar to wafer steppers, and the optical proximity effects of the mask writer are in principle correctable with established OPC methods. To enhance mask patterning, an embedded OPC function, LinearityEqualize TM, has been developed for the Sigma7500- II that is transparent to the user and which does not degrade mask throughput. It employs a Calibre TM rule-based OPC engine from Mentor Graphics, selected for the computational speed necessary for mask run-time execution. A multinode cluster computer applies optimized table-based CD corrections to polygonized pattern data that is then fractured into an internal writer format for subsequent data processing. This embedded proximity correction flattens the linearity behavior for all linewidths and pitches, which targets to improve the CD uniformity on production photomasks. Printing results show that the CD linearity is reduced to below 5 nm for linewidths down to 200 nm, both for clear and dark and for isolated and dense features, and that sub-resolution assist features (SRAF) are reliably printed down to 120 nm. This reduction of proximity effects for main mask features and the extension of the practical resolution for SRAFs expands the application space of DUV laser mask writing.

Advances in low-defect multilayers for EUVL mask blanks

NASA Astrophysics Data System (ADS)

Folta, James A.; Davidson, J. Courtney; Larson, Cindy C.; Walton, Christopher C.; Kearney, Patrick A.

2002-07-01

Low-defect multilayer coatings are required to fabricate mask blanks for Extreme Ultraviolet Lithography (EUVL). The mask blanks consist of high reflectance EUV multilayers on low thermal expansion substrates. A defect density of 0.0025 printable defects/cm2 for both the mask substrate and the multilayer is required to provide a mask blank yield of 60 percent. Current low defect multilayer coating technology allows repeated coating-added defect levels of 0.05/cm2 for defects greater than 90 nm polystyrene latex sphere (PSL) equivalent size for lots of 20 substrates. Extended clean operation of the coating system at levels below 0.08/cm2 for 3 months of operation has also been achieved. Two substrates with zero added defects in the quality area have been fabricated, providing an existence proof that ultra low defect coatings are possible. Increasing the ion source-to-target distance from 410 to 560 mm to reduce undesired coating of the ion source caused the defect density to increase to 0.2/cm2. Deposition and etching diagnostic witness substrates and deposition pinhole cameras showed a much higher level of ion beam spillover (ions missing the sputter target) than expected. Future work will quantify beam spillover, and test designs to reduce spillover, if it is confirmed to be the cause of the increased defect level. The LDD system will also be upgraded to allow clean coating of standard format mask substrates. The upgrade will confirm that the low defect process developed on Si wafers is compatible with the standard mask format 152 mm square substrates, and will provide a clean supply of EUVL mask blanks needed to support development of EUVL mask patterning processes and clean mask handling technologies.

Schizophrenia alters intra-network functional connectivity in the caudate for detecting speech under informational speech masking conditions.

PubMed

Zheng, Yingjun; Wu, Chao; Li, Juanhua; Li, Ruikeng; Peng, Hongjun; She, Shenglin; Ning, Yuping; Li, Liang

2018-04-04

Speech recognition under noisy "cocktail-party" environments involves multiple perceptual/cognitive processes, including target detection, selective attention, irrelevant signal inhibition, sensory/working memory, and speech production. Compared to health listeners, people with schizophrenia are more vulnerable to masking stimuli and perform worse in speech recognition under speech-on-speech masking conditions. Although the schizophrenia-related speech-recognition impairment under "cocktail-party" conditions is associated with deficits of various perceptual/cognitive processes, it is crucial to know whether the brain substrates critically underlying speech detection against informational speech masking are impaired in people with schizophrenia. Using functional magnetic resonance imaging (fMRI), this study investigated differences between people with schizophrenia (n = 19, mean age = 33 ± 10 years) and their matched healthy controls (n = 15, mean age = 30 ± 9 years) in intra-network functional connectivity (FC) specifically associated with target-speech detection under speech-on-speech-masking conditions. The target-speech detection performance under the speech-on-speech-masking condition in participants with schizophrenia was significantly worse than that in matched healthy participants (healthy controls). Moreover, in healthy controls, but not participants with schizophrenia, the strength of intra-network FC within the bilateral caudate was positively correlated with the speech-detection performance under the speech-masking conditions. Compared to controls, patients showed altered spatial activity pattern and decreased intra-network FC in the caudate. In people with schizophrenia, the declined speech-detection performance under speech-on-speech masking conditions is associated with reduced intra-caudate functional connectivity, which normally contributes to detecting target speech against speech masking via its functions of suppressing masking-speech signals.

Unmasking identity dissonance: exploring medical students' professional identity formation through mask making.

PubMed

Joseph, Kimera; Bader, Karlen; Wilson, Sara; Walker, Melissa; Stephens, Mark; Varpio, Lara

2017-04-01

Professional identity formation is an on-going, integrative process underlying trainees' experiences of medical education. Since each medical student's professional identity formation process is an individual, internal, and often times emotionally charged unconscious experience, it can be difficult for educators to understand each student's unique experience. We investigate if mask making can provide learners and educators the opportunity to explore medical students' professional identity formation experiences. In 2014 and 2015, 30 third year medical students created masks, with a brief accompanying written narrative, to creatively express their medical education experiences. Using a paradigmatic case selection approach, four masks were analyzed using techniques from visual rhetoric and the Listening Guide. The research team clearly detected identity dissonance in each case. Each case provided insights into the unique personal experiences of the dissonance process for each trainee at a particular point in their medical school training. We propose that mask making accompanied by a brief narrative reflection can help educators identify students experiencing identity dissonance, and explore each student's unique experience of that dissonance. The process of making these artistic expressions may also provide a form of intervention that can enable educators to help students navigate professional identity formation and identity dissonance experiences.

A Novel Anti-Influenza Copper Oxide Containing Respiratory Face Mask

PubMed Central

Borkow, Gadi; Zhou, Steve S.; Page, Tom; Gabbay, Jeffrey

2010-01-01

Background Protective respiratory face masks protect the nose and mouth of the wearer from vapor drops carrying viruses or other infectious pathogens. However, incorrect use and disposal may actually increase the risk of pathogen transmission, rather than reduce it, especially when masks are used by non-professionals such as the lay public. Copper oxide displays potent antiviral properties. A platform technology has been developed that permanently introduces copper oxide into polymeric materials, conferring them with potent biocidal properties. Methodology/Principal Findings We demonstrate that impregnation of copper oxide into respiratory protective face masks endows them with potent biocidal properties in addition to their inherent filtration properties. Both control and copper oxide impregnated masks filtered above 99.85% of aerosolized viruses when challenged with 5.66±0.51 and 6.17±0.37 log10TCID50 of human influenza A virus (H1N1) and avian influenza virus (H9N2), respectively, under simulated breathing conditions (28.3 L/min). Importantly, no infectious human influenza A viral titers were recovered from the copper oxide containing masks within 30 minutes (≤0.88 log10TCID50), while 4.67±1.35 log10TCID50 were recovered from the control masks. Similarly, the infectious avian influenza titers recovered from the copper oxide containing masks were ≤0.97±0.01 log10TCID50 and from the control masks 5.03±0.54 log10TCID50. The copper oxide containing masks successfully passed Bacterial Filtration Efficacy, Differential Pressure, Latex Particle Challenge, and Resistance to Penetration by Synthetic Blood tests designed to test the filtration properties of face masks in accordance with the European EN 14683:2005 and NIOSH N95 standards. Conclusions/Significance Impregnation of copper oxide into respiratory protective face masks endows them with potent anti-influenza biocidal properties without altering their physical barrier properties. The use of biocidal masks may significantly reduce the risk of hand or environmental contamination, and thereby subsequent infection, due to improper handling and disposal of the masks. PMID:20592763

In-line verification of linewidth uniformity for 0.18 and below: design rule reticles

NASA Astrophysics Data System (ADS)

Tan, TaiSheng; Kuo, Shen C.; Wu, Clare; Falah, Reuven; Hemar, Shirley; Sade, Amikam; Gottlib, Gidon

2000-07-01

Mask making process development and control is addressed using a reticle inspection tool equipped with the new revolutionized application called LBM-Linewidth Bias Monitoring. In order to use the LBM for mask-making process control, procedures and corresponding test plates are a developed, such that routine monitoring of the manufacturing process discloses process variation and machine variation. At the same time systematic variation are studied and either taken care of or taken into consideration to allow successful production line work. In this paper the contribution of the LBM for mask quality monitoring is studied with respect to dense layers, e.g. DRAM. Another aspect of this application - the detection of very small CD mis-uniformity areas is discussed.

Recovery of a crowded object by masking the flankers: Determining the locus of feature integration

PubMed Central

Chakravarthi, Ramakrishna; Cavanagh, Patrick

2009-01-01

Object recognition is a central function of the visual system. As a first step, the features of an object are registered; these independently encoded features are then bound together to form a single representation. Here we investigate the locus of this “feature integration” by examining crowding, a striking breakdown of this process. Crowding, an inability to identify a peripheral target surrounded by flankers, results from “excessive integration” of target and flanker features. We presented a standard crowding display with a target C flanked by four flanker C's in the periphery. We then masked only the flankers (but not the target) with one of three kinds of masks—noise, metacontrast, and object substitution—each of which interferes at progressively higher levels of visual processing. With noise and metacontrast masks (low-level masking), the crowded target was recovered, whereas with object substitution masks (high-level masking), it was not. This places a clear upper bound on the locus of interference in crowding suggesting that crowding is not a low-level phenomenon. We conclude that feature integration, which underlies crowding, occurs prior to the locus of object substitution masking. Further, our results indicate that the integrity of the flankers, but not their identification, is crucial for crowding to occur. PMID:19810785

The edge of awareness: Mask spatial density, but not color, determines optimal temporal frequency for continuous flash suppression.

PubMed

Drewes, Jan; Zhu, Weina; Melcher, David

2018-01-01

The study of how visual processing functions in the absence of visual awareness has become a major research interest in the vision-science community. One of the main sources of evidence that stimuli that do not reach conscious awareness-and are thus "invisible"-are still processed to some degree by the visual system comes from studies using continuous flash suppression (CFS). Why and how CFS works may provide more general insight into how stimuli access awareness. As spatial and temporal properties of stimuli are major determinants of visual perception, we hypothesized that these properties of the CFS masks would be of significant importance to the achieved suppression depth. In previous studies however, the spatial and temporal properties of the masks themselves have received little study, and masking parameters vary widely across studies, making a metacomparison difficult. To investigate the factors that determine the effectiveness of CFS, we varied both the temporal frequency and the spatial density of Mondrian-style masks. We consistently found the longest suppression duration for a mask temporal frequency of around 6 Hz. In trials using masks with reduced spatial density, suppression was weaker and frequency tuning was less precise. In contrast, removing color reduced mask effectiveness but did not change the pattern of suppression strength as a function of frequency. Overall, this pattern of results stresses the importance of CFS mask parameters and is consistent with the idea that CFS works by disrupting the spatiotemporal mechanisms that underlie conscious access to visual input.

Mask-less patterning of organic light emitting diodes using electrospray and selective biasing on pixel electrodes

NASA Astrophysics Data System (ADS)

Lee, Sangyeob; Koo, Hyun; Cho, Sunghwan

2015-04-01

Wet process of soluble organic light emitting diode (OLED) materials has attracted much attention due to its potential as a large-area manufacturing process with high productivity. Electrospray (ES) deposition is one of candidates of organic thin film formation process for OLED. However, to fabricate red, green, and blue emitters for color display, a fine metal mask is required during spraying emitter materials. We demonstrate a mask-less color pixel patterning process using ES of soluble OLED materials and selective biasing on pixel electrodes and a spray nozzle. We show red and green line patterns of OLED materials. It was found that selective patterning can be allowed by coulomb repulsion between nozzle and pixel. Furthermore, we fabricated blue fluorescent OLED devices by vacuum evaporation and ES processes. The device performance of ES processed OLED showed nearly identical current-voltage characteristics and slightly lower current efficiency compared to vacuum processed OLED.

Failure of the Laryngeal Mask Airway Unique™ and Classic™ in the pediatric surgical patient: a study of clinical predictors and outcomes.

PubMed

Mathis, Michael R; Haydar, Bishr; Taylor, Emma L; Morris, Michelle; Malviya, Shobha V; Christensen, Robert E; Ramachandran, Satya-Krishna; Kheterpal, Sachin

2013-12-01

Although predictors of laryngeal mask airway failure in adults have been elucidated, there remains a paucity of data regarding laryngeal mask airway failure in children. The authors performed a retrospective database review of all pediatric patients who received a laryngeal mask anesthetic at their institution from 2006 to 2010. Device brands were restricted to LMA Unique™ (Cardinal Health, Dublin, OH) and LMA Classic™ (LMA North America, San Diego, CA), and primary outcome was laryngeal mask failure, defined as any airway event requiring device removal and tracheal intubation. Potential risk factors were analyzed with both univariate and multivariate techniques and included medical history, physical examination, surgical, and anesthetic characteristics. Of the 11,910 anesthesia cases performed in the study, 102 cases (0.86%) experienced laryngeal mask failure. Common presenting features of laryngeal mask failures included leak (25%), obstruction (48%), and patient intolerance such as intractable coughing/bucking (11%). Failures occurred before incision in 57% of cases and after incision in 43%. Independent clinical associations included ear/nose/throat surgical procedure, nonoutpatient admission status, prolonged surgical duration, congenital/acquired airway abnormality, and patient transport. The findings of the study support the use of the LMA Unique™ and LMA Classic™ as reliable pediatric supraglottic airway devices, demonstrating relatively low failure rates. Predictors of laryngeal mask airway failure in the pediatric surgical population do not overlap with those in the adult population and should therefore be independently considered.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gratama van Andel, H. A. F.; Venema, H. W.; Streekstra, G. J.

For clear visualization of vessels in CT angiography (CTA) images of the head and neck using maximum intensity projection (MIP) or volume rendering (VR) bone has to be removed. In the past we presented a fully automatic method to mask the bone [matched mask bone elimination (MMBE)] for this purpose. A drawback is that vessels adjacent to bone may be partly masked as well. We propose a modification, multiscale MMBE, which reduces this problem by using images at two scales: a higher resolution than usual for image processing and a lower resolution to which the processed images are transformed formore » use in the diagnostic process. A higher in-plane resolution is obtained by the use of a sharper reconstruction kernel. The out-of-plane resolution is improved by deconvolution or by scanning with narrower collimation. The quality of the mask that is used to remove bone is improved by using images at both scales. After masking, the desired resolution for the normal clinical use of the images is obtained by blurring with Gaussian kernels of appropriate widths. Both methods (multiscale and original) were compared in a phantom study and with clinical CTA data sets. With the multiscale approach the width of the strip of soft tissue adjacent to the bone that is masked can be reduced from 1.0 to 0.2 mm without reducing the quality of the bone removal. The clinical examples show that vessels adjacent to bone are less affected and therefore better visible. Images processed with multiscale MMBE have a slightly higher noise level or slightly reduced resolution compared with images processed by the original method and the reconstruction and processing time is also somewhat increased. Nevertheless, multiscale MMBE offers a way to remove bone automatically from CT angiography images without affecting the integrity of the blood vessels. The overall image quality of MIP or VR images is substantially improved relative to images processed with the original MMBE method.« less

UDOF direct improvement by modulating mask absorber thickness

NASA Astrophysics Data System (ADS)

Yu, Tuan-Yen; Lio, En Chuan; Chen, Po Tsang; Wei, Chih I.; Chen, Yi Ting; Peng, Ming Chun; Chou, William; Yu, Chun Chi

2016-10-01

As the process generation migrate to advanced and smaller dimension or pitch, the mask and resist 3D effects will impact the lithography focus common window severely because of both individual depth-of-focus (iDOF) range decrease and center mismatch. Furthermore, some chemical or thermal factors, such as PEB (Post Exposure Bake) also worsen the usable depth-of-focus (uDOF) performance. So the mismatch of thru-pitch iDOF center should be considered as a lithography process integration issue, and more complicated to partition the 3D effects induced by optical or chemical factors. In order to reduce the impact of 3D effects induced by both optical and chemical issues, and improve iDOF center mismatch, we would like to propose a mask absorber thickness offset approach, which is directly to compensate the iDOF center bias by adjusting mask absorber thickness, for iso, semi-iso or dense characteristics in line, space or via patterns to enlarge common process window, i.e uDOF, which intends to provide similar application as Flexwave[1] (ASML trademark). By the way, since mask absorber thickness offset approach is similar to focus tuning or change on wafer lithography process, it could be acted as the process tuning method of photoresist (PR) profile optimization locally, PR scum improvement in specific patterns or to modulate etching bias to meet process integration request. For mass production consideration, and available material, current att-PSM blank, quartz, MoSi with chrome layer as hard-mask in reticle process, will be implemented in this experiment, i.e. chrome will be kept remaining above partial thru-pitch patterns, and act as the absorber thickness bias in different patterns. And then, from the best focus offset of thru-pitch patterns, the iDOF center shifts could be directly corrected and to enlarge uDOF by increasing the overlap of iDOF. Finally, some negative tone development (NTD) result in line patterns will be demonstrated as well.

How color, regularity, and good Gestalt determine backward masking.

PubMed

Sayim, Bilge; Manassi, Mauro; Herzog, Michael

2014-06-18

The strength of visual backward masking depends on the stimulus onset asynchrony (SOA) between target and mask. Recently, it was shown that the conjoint spatial layout of target and mask is as crucial as SOA. Particularly, masking strength depends on whether target and mask group with each other. The same is true in crowding where the global spatial layout of the flankers and target-flanker grouping determine crowding strength. Here, we presented a vernier target followed by different flanker configurations at varying SOAs. Similar to crowding, masking of a red vernier target was strongly reduced for arrays of 10 green compared with 10 red flanking lines. Unlike crowding, single green lines flanking the red vernier showed strong masking. Irregularly arranged flanking lines yielded stronger masking than did regularly arranged lines, again similar to crowding. While cuboid flankers reduced crowding compared with single lines, this was not the case in masking. We propose that, first, masking is reduced when the flankers are part of a larger spatial structure. Second, spatial factors counteract color differences between the target and the flankers. Third, complex Gestalts, such as cuboids, seem to need longer processing times to show ungrouping effects as observed in crowding. Strong parallels between masking and crowding suggest similar underlying mechanism; however, temporal factors in masking additionally modulate performance, acting as an additional grouping cue. © 2014 ARVO.

Getting the cocktail party started: masking effects in speech perception

PubMed Central

Evans, S; McGettigan, C; Agnew, ZK; Rosen, S; Scott, SK

2016-01-01

Spoken conversations typically take place in noisy environments and different kinds of masking sounds place differing demands on cognitive resources. Previous studies, examining the modulation of neural activity associated with the properties of competing sounds, have shown that additional speech streams engage the superior temporal gyrus. However, the absence of a condition in which target speech was heard without additional masking made it difficult to identify brain networks specific to masking and to ascertain the extent to which competing speech was processed equivalently to target speech. In this study, we scanned young healthy adults with continuous functional Magnetic Resonance Imaging (fMRI), whilst they listened to stories masked by sounds that differed in their similarity to speech. We show that auditory attention and control networks are activated during attentive listening to masked speech in the absence of an overt behavioural task. We demonstrate that competing speech is processed predominantly in the left hemisphere within the same pathway as target speech but is not treated equivalently within that stream, and that individuals who perform better in speech in noise tasks activate the left mid-posterior superior temporal gyrus more. Finally, we identify neural responses associated with the onset of sounds in the auditory environment, activity was found within right lateralised frontal regions consistent with a phasic alerting response. Taken together, these results provide a comprehensive account of the neural processes involved in listening in noise. PMID:26696297

The Q Continuum: Encounter with the Cloud Mask

NASA Astrophysics Data System (ADS)

Ackerman, S. A.; Frey, R.; Holz, R.; Philips, C.; Dutcher, S.

2017-12-01

We are developing a common cloud mask for MODIS and VIIRS observations, referred to as the MODIS VIIRS Continuity Mask (MVCM). Our focus is on extending the MODIS-heritage cloud detection approach in order to generate appropriate climate data records for clouds and climate studies. The MVCM is based on heritage from the MODIS cloud mask (MOD35 and MYD35) and employs a series of tests on MODIS reflectances and brightness temperatures. Cloud detection is based on contrasts (i.e., cloud versus background surface) at pixel resolution. The MVCM follows the same approach. These cloud masks use multiple cloud detection tests to indicate the confidence level that the observation is of a clear-sky scene. The outcome of a test ranges from 0 (cloudy) to 1 (clear-sky scene). Because of overlap in the sensitivities of the various spectral tests to the type of cloud, each test is considered in one of several groups. The final cloud mask is determined from the product of the minimum confidence of each group and is referred to as the Q value as defined in Ackerman et al (1998). In MOD35 and MYD35 processing, the Q value is not output, rather predetermined Q values determine the result: If Q ≥ .99 the scene is clear; .95 ≤ Q < .99 the pixel is probably a clear scene, .66 ≤ Q < .95 is probably cloudy and Q < .66 is cloudy. Thus representing Q discretely and not as a continuum. For the MVCM, the numerical value of the Q is output along with the classification of clear, probably clear, probably cloudy, and cloudy. Through comparisons with collocated CALIOP and MODIS observations, we will assess the categorization of the Q values as a function of scene type ). While validation studies have indicated the utility and statistical correctness of the cloud mask approach, the algorithm does not possess immeasurable power and perfection. This comparison will assess the time and space dependence of Q and assure that the laws of physics are followed, at least according to normal human notions. Using CALIOP as representing truth, a receiver operating characteristic curve (ROC) will be analyzed to determine the optimum Q for various scenes and seasons, thus providing a continuum of discriminating thresholds.

Electrophysiological signals associated with fluency of different levels of processing reveal multiple contributions to recognition memory.

PubMed

Li, Bingbing; Taylor, Jason R; Wang, Wei; Gao, Chuanji; Guo, Chunyan

2017-08-01

Processing fluency appears to influence recognition memory judgements, and the manipulation of fluency, if misattributed to an effect of prior exposure, can result in illusory memory. Although it is well established that fluency induced by masked repetition priming leads to increased familiarity, manipulations of conceptual fluency have produced conflicting results, variously affecting familiarity or recollection. Some recent studies have found that masked conceptual priming increases correct recollection (Taylor & Henson, 2012), and the magnitude of this behavioural effect correlates with analogous fMRI BOLD priming effects in brain regions associated with recollection (Taylor, Buratto, & Henson, 2013). However, the neural correlates and time-courses of masked repetition and conceptual priming were not compared directly in previous studies. The present study used event-related potentials (ERPs) to identify and compare the electrophysiological correlates of masked repetition and conceptual priming and investigate how they contribute to recognition memory. Behavioural results were consistent with previous studies: Repetition primes increased familiarity, whereas conceptual primes increased correct recollection. Masked repetition and conceptual priming also decreased the latency of late parietal component (LPC). Masked repetition priming was associated with an early P200 effect and a later parietal maximum N400 effect, whereas masked conceptual priming was only associated with a central-parietal maximum N400 effect. In addition, the topographic distributions of the N400 repetition priming and conceptual priming effects were different. These results suggest that fluency at different levels of processing is associated with different ERP components, and contributes differentially to subjective recognition memory experiences. Copyright © 2017 Elsevier Inc. All rights reserved.

Spatial Release From Masking in Simulated Cochlear Implant Users With and Without Access to Low-Frequency Acoustic Hearing

PubMed Central

Dietz, Mathias; Hohmann, Volker; Jürgens, Tim

2015-01-01

For normal-hearing listeners, speech intelligibility improves if speech and noise are spatially separated. While this spatial release from masking has already been quantified in normal-hearing listeners in many studies, it is less clear how spatial release from masking changes in cochlear implant listeners with and without access to low-frequency acoustic hearing. Spatial release from masking depends on differences in access to speech cues due to hearing status and hearing device. To investigate the influence of these factors on speech intelligibility, the present study measured speech reception thresholds in spatially separated speech and noise for 10 different listener types. A vocoder was used to simulate cochlear implant processing and low-frequency filtering was used to simulate residual low-frequency hearing. These forms of processing were combined to simulate cochlear implant listening, listening based on low-frequency residual hearing, and combinations thereof. Simulated cochlear implant users with additional low-frequency acoustic hearing showed better speech intelligibility in noise than simulated cochlear implant users without acoustic hearing and had access to more spatial speech cues (e.g., higher binaural squelch). Cochlear implant listener types showed higher spatial release from masking with bilateral access to low-frequency acoustic hearing than without. A binaural speech intelligibility model with normal binaural processing showed overall good agreement with measured speech reception thresholds, spatial release from masking, and spatial speech cues. This indicates that differences in speech cues available to listener types are sufficient to explain the changes of spatial release from masking across these simulated listener types. PMID:26721918

Comparison of experiments and computations for cold gas spraying through a mask. Part 2

NASA Astrophysics Data System (ADS)

Klinkov, S. V.; Kosarev, V. F.; Ryashin, N. S.

2017-03-01

This paper presents experimental and simulation results of cold spray coating deposition using the mask placed above the plane substrate at different distances. Velocities of aluminum (mean size 30 μm) and copper (mean size 60 μm) particles in the vicinity of the mask are determined. It was found that particle velocities have angular distribution in flow with a representative standard deviation of 1.5-2 degrees. Modeling of coating formation behind the mask with account for this distribution was developed. The results of model agree with experimental data confirming the importance of particle angular distribution for coating deposition process in the masked area.

Development and characterization of clay facial mask containing turmeric extract solid dispersion.

PubMed

Pan-On, Suchiwa; Rujivipat, Soravoot; Ounaroon, Anan; Tiyaboonchai, Waree

2018-04-01

To develop clay facial mask containing turmeric extract solid dispersion (TESD) for enhancing curcumin water solubility and permeability and to determine suitable clay based facial mask. The TESD were prepared by solvent and melting solvent method with various TE to polyvinylpyrrolidone (PVP) K30 mass ratios. The physicochemical properties, water solubility, and permeability were examined. The effects of clay types on physical stability of TESD, water adsorption, and curcumin adsorption capacity were evaluated. The TESD prepared by solvent method with a TE to PVP K30 mass ratio of 1:2 showed physically stable, dry powders, when mixed with clay. When TESD was dissolved in water, the obtained TESD micelles showed spherical shape with mean size of ∼100 nm resulting in a substantial enhancement of curcumin water solubility, ∼5 mg/ml. Bentonite (Bent) and mica (M) showed the highest water adsorption capacity. The TESD's color was altered when mixed with Bent, titanium dioxide (TiO 2 ) and zinc oxide (ZnO) indicating curcumin instability. Talcum (Talc) showed the greatest curcumin adsorption followed by M and kaolin (K), respectively. Consequently, in vitro permeation studies of the TESD mixed with Talc showed lowest curcumin permeation, while TESD mixed with M or K showed similar permeation profile as free TESD solutions. The developed TESD-based clay facial mask showed lower curcumin permeation as compared to those formulations with Tween 80. The water solubility and permeability of curcumin in clay based facial mask could be improved using solid dispersion technique and suitable clay base composed of K, M, and Talc.

2012 Mask Industry Survey

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.

2012-11-01

A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

Is masked priming modulated by memory load? A test of the automaticity of masked identity priming in lexical decision.

PubMed

Perea, Manuel; Marcet, Ana; Lozano, Mario; Gomez, Pablo

2018-05-29

One of the key assumptions of the masked priming lexical decision task (LDT) is that primes are processed without requiring attentional resources. Here, we tested this assumption by presenting a dual-task manipulation to increase memory load and measure the change in masked identity priming on the targets in the LDT. If masked priming does not require attentional resources, increased memory load should have no influence on the magnitude of the observed identity priming effects. We conducted two LDT experiments, using a within-subjects design, to investigate the effect of memory load (via a concurrent matching task Experiment 1 and a concurrent search task in Experiment 2) on masked identity priming. Results showed that the magnitude of masked identity priming on word targets was remarkably similar under high and low memory load. Thus, these experiments provide empirical evidence for the automaticity assumption of masked identity priming in the LDT.

The attentional blink is not affected by backward masking of T2, T2-mask SOA, or level of T2 impoverishment.

PubMed

Jannati, Ali; Spalek, Thomas M; Lagroix, Hayley E P; Di Lollo, Vincent

2012-02-01

Identification of the second of two targets (T2) is impaired when presented shortly after the first (T1). This attentional blink (AB) is thought to arise from a delay in T2 processing during which T2 is vulnerable to masking. Conventional studies have measured T2 accuracy which is constrained by the 100% ceiling. We avoided this problem by using a dynamic threshold-tracking procedure that is inherently free from ceiling constraints. In two experiments we examined how AB magnitude is affected by three masking-related factors: (a) presence/absence of T2 mask, (b) T2-mask stimulus onset asynchrony (SOA), and (c) level of T2 impoverishment (signal-to-noise ratio [SNR]). In Experiment 1, overall accuracy decreased with T2-mask SOA. The magnitude of the AB, however, was invariant with SOA and with mask presence/absence. Experiment 2 further showed that the AB was invariant with T2 SNR. The relationship among mask presence/absence, SOA, and T2 SNR and the AB is encompassed in a qualitative model.

Near real-time shadow detection and removal in aerial motion imagery application

NASA Astrophysics Data System (ADS)

Silva, Guilherme F.; Carneiro, Grace B.; Doth, Ricardo; Amaral, Leonardo A.; Azevedo, Dario F. G. de

2018-06-01

This work presents a method to automatically detect and remove shadows in urban aerial images and its application in an aerospace remote monitoring system requiring near real-time processing. Our detection method generates shadow masks and is accelerated by GPU programming. To obtain the shadow masks, we converted images from RGB to CIELCh model, calculated a modified Specthem ratio, and applied multilevel thresholding. Morphological operations were used to reduce shadow mask noise. The shadow masks are used in the process of removing shadows from the original images using the illumination ratio of the shadow/non-shadow regions. We obtained shadow detection accuracy of around 93% and shadow removal results comparable to the state-of-the-art while maintaining execution time under real-time constraints.

Variability-aware double-patterning layout optimization for analog circuits

NASA Astrophysics Data System (ADS)

Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Lee, Zhao Chuan; Tseng, I.-Lun; Ong, Jonathan Yoong Seang

2018-03-01

The semiconductor industry has adopted multi-patterning techniques to manage the delay in the extreme ultraviolet lithography technology. During the design process of double-patterning lithography layout masks, two polygons are assigned to different masks if their spacing is less than the minimum printable spacing. With these additional design constraints, it is very difficult to find experienced layout-design engineers who have a good understanding of the circuit to manually optimize the mask layers in order to minimize color-induced circuit variations. In this work, we investigate the impact of double-patterning lithography on analog circuits and provide quantitative analysis for our designers to select the optimal mask to minimize the circuit's mismatch. To overcome the problem and improve the turn-around time, we proposed our smart "anchoring" placement technique to optimize mask decomposition for analog circuits. We have developed a software prototype that is capable of providing anchoring markers in the layout, allowing industry standard tools to perform automated color decomposition process.

Metacontrast masking and attention do not interact.

PubMed

Agaoglu, Sevda; Breitmeyer, Bruno; Ogmen, Haluk

2016-07-01

Visual masking and attention have been known to control the transfer of information from sensory memory to visual short-term memory. A natural question is whether these processes operate independently or interact. Recent evidence suggests that studies that reported interactions between masking and attention suffered from ceiling and/or floor effects. The objective of the present study was to investigate whether metacontrast masking and attention interact by using an experimental design in which saturation effects are avoided. We asked observers to report the orientation of a target bar randomly selected from a display containing either two or six bars. The mask was a ring that surrounded the target bar. Attentional load was controlled by set-size and masking strength by the stimulus onset asynchrony between the target bar and the mask ring. We investigated interactions between masking and attention by analyzing two different aspects of performance: (i) the mean absolute response errors and (ii) the distribution of signed response errors. Our results show that attention affects observers' performance without interacting with masking. Statistical modeling of response errors suggests that attention and metacontrast masking exert their effects by independently modulating the probability of "guessing" behavior. Implications of our findings for models of attention are discussed.

Lithographic image simulation for the 21st century with 19th-century tools

NASA Astrophysics Data System (ADS)

Gordon, Ronald L.; Rosenbluth, Alan E.

2004-01-01

Simulation of lithographic processes in semiconductor manufacturing has gone from a crude learning tool 20 years ago to a critical part of yield enhancement strategy today. Although many disparate models, championed by equally disparate communities, exist to describe various photoresist development phenomena, these communities would all agree that the one piece of the simulation picture that can, and must, be computed accurately is the image intensity in the photoresist. The imaging of a photomask onto a thin-film stack is one of the only phenomena in the lithographic process that is described fully by well-known, definitive physical laws. Although many approximations are made in the derivation of the Fourier transform relations between the mask object, the pupil, and the image, these and their impacts are well-understood and need little further investigation. The imaging process in optical lithography is modeled as a partially-coherent, Kohler illumination system. As Hopkins has shown, we can separate the computation into 2 pieces: one that takes information about the illumination source, the projection lens pupil, the resist stack, and the mask size or pitch, and the other that only needs the details of the mask structure. As the latter piece of the calculation can be expressed as a fast Fourier transform, it is the first piece that dominates. This piece involves computation of a potentially large number of numbers called Transmission Cross-Coefficients (TCCs), which are correlations of the pupil function weighted with the illumination intensity distribution. The advantage of performing the image calculations this way is that the computation of these TCCs represents an up-front cost, not to be repeated if one is only interested in changing the mask features, which is the case in Model-Based Optical Proximity Correction (MBOPC). The down side, however, is that the number of these expensive double integrals that must be performed increases as the square of the mask unit cell area; this number can cause even the fastest computers to balk if one needs to study medium- or long-range effects. One can reduce this computational burden by approximating with a smaller area, but accuracy is usually a concern, especially when building a model that will purportedly represent a manufacturing process. This work will review the current methodologies used to simulate the intensity distribution in air above the resist and address the above problems. More to the point, a methodology has been developed to eliminate the expensive numerical integrations in the TCC calculations, as the resulting integrals in many cases of interest can be either evaluated analytically, or replaced by analytical functions accurate to within machine precision. With the burden of computing these numbers lightened, more accurate representations of the image field can be realized, and better overall models are then possible.

Effects of nasal positive expiratory pressure on dynamic hyperinflation and 6-minute walk test in patients with COPD.

PubMed

Wibmer, Thomas; Rüdiger, Stefan; Heitner, Claudia; Kropf-Sanchen, Cornelia; Blanta, Ioanna; Stoiber, Kathrin M; Rottbauer, Wolfgang; Schumann, Christian

2014-05-01

Dynamic hyperinflation is an important target in the treatment of COPD. There is increasing evidence that positive expiratory pressure (PEP) could reduce dynamic hyperinflation during exercise. PEP application through a nasal mask and a flow resistance device might have the potential to be used during daily physical activities as an auxiliary strategy of ventilatory assistance. The aim of this study was to determine the effects of nasal PEP on lung volumes during physical exercise in patients with COPD. Twenty subjects (mean ± SD age 69.4 ± 6.4 years) with stable mild-to-severe COPD were randomized to undergo physical exercise with nasal PEP breathing, followed by physical exercise with habitual breathing, or vice versa. Physical exercise was induced by a standard 6-min walk test (6 MWT) protocol. PEP was applied by means of a silicone nasal mask loaded with a fixed-orifice flow resistor. Body plethysmography was performed immediately pre-exercise and post-exercise. Differences in mean pre- to post-exercise changes in total lung capacity (-0.63 ± 0.80 L, P = .002), functional residual capacity (-0.48 ± 0.86 L, P = .021), residual volume (-0.56 ± 0.75 L, P = .004), S(pO2) (-1.7 ± 3.4%, P = .041), and 6 MWT distance (-30.8 ± 30.0 m, P = .001) were statistically significant between the experimental and the control interventions. The use of flow-dependent expiratory pressure, applied with a nasal mask and a PEP device, might promote significant reduction of dynamic hyperinflation during walking exercise. Further studies are warranted addressing improvements in endurance performance under regular application of nasal PEP during physical activities.

Precision process calibration and CD predictions for low-k1 lithography

NASA Astrophysics Data System (ADS)

Chen, Ting; Park, Sangbong; Berger, Gabriel; Coskun, Tamer H.; de Vocht, Joep; Chen, Fung; Yu, Linda; Hsu, Stephen; van den Broeke, Doug; Socha, Robert; Park, Jungchul; Gronlund, Keith; Davis, Todd; Plachecki, Vince; Harris, Tom; Hansen, Steve; Lambson, Chuck

2005-06-01

Leading resist calibration for sub-0.3 k1 lithography demands accuracy <2nm for CD through pitch. An accurately calibrated resist process is the prerequisite for establishing production-worthy manufacturing under extreme low k1. From an integrated imaging point of view, the following key components must be simultaneously considered during the calibration - high numerical aperture (NA>0.8) imaging characteristics, customized illuminations (measured vs. modeled pupil profiles), resolution enhancement technology (RET) mask with OPC, reticle metrology, and resist thin film substrate. For imaging at NA approaching unity, polarized illumination can impact significantly the contrast formation in the resist film stack, and therefore it is an important factor to consider in the CD-based resist calibration. For aggressive DRAM memory core designs at k1<0.3, pattern-specific illumination optimization has proven to be critical for achieving the required imaging performance. Various optimization techniques from source profile optimization with fixed mask design to the combined source and mask optimization have been considered for customer designs and available imaging capabilities. For successful low-k1 process development, verification of the optimization results can only be made with a sufficiently tunable resist model that can predicate the wafer printing accurately under various optimized process settings. We have developed, for resist patterning under aggressive low-k1 conditions, a novel 3D diffusion model equipped with double-Gaussian convolution in each dimension. Resist calibration with the new diffusion model has demonstrated a fitness and CD predication accuracy that rival or outperform the traditional 3D physical resist models. In this work, we describe our empirical approach to achieving the nm-scale precision for advanced lithography process calibrations, using either measured 1D CD through-pitch or 2D memory core patterns. We show that for ArF imaging, the current resist development and diffusion modeling can readily achieve ~1-2nm max CD errors for common 1D through-pitch and aggressive 2D memory core resist patterns. Sensitivities of the calibrated models to various process parameters are analyzed, including the comparison between the measured and modeled (Gaussian or GRAIL) pupil profiles. We also report our preliminary calibration results under selected polarized illumination conditions.

Digital Images and Human Vision

NASA Technical Reports Server (NTRS)

Watson, Andrew B.; Null, Cynthia H. (Technical Monitor)

1997-01-01

Processing of digital images destined for visual consumption raises many interesting questions regarding human visual sensitivity. This talk will survey some of these questions, including some that have been answered and some that have not. There will be an emphasis upon visual masking, and a distinction will be drawn between masking due to contrast gain control processes, and due to processes such as hypothesis testing, pattern recognition, and visual search.

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

NASA Astrophysics Data System (ADS)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

Implications of Sustained and Transient Channels for Theories of Visual Pattern Masking, Saccadic Suppression, and Information Processing

ERIC Educational Resources Information Center

Breitmeyer, Bruno G.; Ganz, Leo

1976-01-01

This paper reviewed briefly the major types of masking effects obtained with various methods and the major theories or models that have been proposed to account for these effects, and outlined a three-mechanism model of visual pattern masking based on psychophysical and neurophysiological properties of the visual system. (Author/RK)

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Directional Effects between Rapid Auditory Processing and Phonological Awareness in Children

ERIC Educational Resources Information Center

Johnson, Erin Phinney; Pennington, Bruce F.; Lee, Nancy Raitano; Boada, Richard

2009-01-01

Background: Deficient rapid auditory processing (RAP) has been associated with early language impairment and dyslexia. Using an auditory masking paradigm, children with language disabilities perform selectively worse than controls at detecting a tone in a backward masking (BM) condition (tone followed by white noise) compared to a forward masking…

Particle Physics in the Sky and Astrophysics Underground: Connecting the Universe's Largest and Smallest Scales

NASA Astrophysics Data System (ADS)

Swanson, Molly E. C.

2008-08-01

Particles have tremendous potential as astronomical messengers, and conversely, studying the universe as a whole also teaches us about particle physics. This thesis encompasses both of these research directions. Many models predict a diffuse flux of high energy neutrinos from active galactic nuclei and other astrophysical sources. The "Astrophysics Underground" portion of this thesis describes a search for this neutrino flux performed by looking for very high energy upward-going muons using the Super-K detector. In addition to using particles to do astronomy, we can also use the universe itself as a particle physics lab. The "Particle Physics in the Sky" portion of this thesis focuses on extracting cosmological information from galaxy surveys. To overcome technical challenges faced by the latest galaxy surveys, we produced a comprehensive upgrade to mangle, a software package that processes the angular masks defining the survey area on the sky. We added dramatically faster algorithms and new useful features that are necessary for managing complex masks of current and next-generation galaxy surveys. With this software in hand, we utilized SDSS data to investigate the relation between galaxies and dark matter by studying relative bias, i.e., the relation between different types of galaxies. Separating galaxies by their luminosities and colors reveals a complicated picture: red galaxies are clustered more strongly than blue galaxies, with both the brightest and the faintest red galaxies showing the strongest clustering. Furthermore, red and blue galaxies tend to occupy different regions of space. In order to make precise measurements from the next generation of galaxy surveys, it will be essential to account for this complexity.

Automaticity of higher cognitive functions: neurophysiological evidence for unconscious syntactic processing of masked words.

PubMed

Jiménez-Ortega, Laura; García-Milla, Marcos; Fondevila, Sabela; Casado, Pilar; Hernández-Gutiérrez, David; Martín-Loeches, Manuel

2014-12-01

Models of language comprehension assume that syntactic processing is automatic, at least at early stages. However, the degree of automaticity of syntactic processing is still controversial. Evidence of automaticity is either indirect or has been observed for pairs of words, which might provide a poor syntactic context in comparison to sentences. The present study investigates the automaticity of syntactic processing using event-related brain potentials (ERPs) during sentence processing. To this end, masked adjectives that could either be syntactically correct or incorrect relative to a sentence being processed appeared just prior to the presentation of supraliminal adjectives. The latter could also be correct or incorrect. According to our data, subliminal gender agreement violations embedded in a sentence trigger an early anterior negativity-like modulation, whereas supraliminal gender agreement violations elicited a later anterior negativity. First-pass syntactic parsing thus appears to be unconsciously and automatically elicited. Interestingly, a P600-like modulation of short duration and early latency could also be observed for masked violations. In addition, masked violations also modulated the P600 component elicited by unmasked targets, probably reflecting that the mechanisms of revising a structural mismatch appear affected by subliminal information. According to our findings, both conscious and unconscious processes apparently contribute to syntactic processing. These results are discussed in line with most recent theories of automaticity and syntactic processing. Copyright © 2014 Elsevier B.V. All rights reserved.

Effect of the Fabrication Parameters of the Nanosphere Lithography Method on the Properties of the Deposited Au-Ag Nanoparticle Arrays

PubMed Central

Liu, Jing; Chen, Chaoyang; Yang, Guangsong; Chen, Yushan; Yang, Cheng-Fu

2017-01-01

The nanosphere lithography (NSL) method can be developed to deposit the Au-Ag triangle hexagonal nanoparticle arrays for the generation of localized surface plasmon resonance. Previously, we have found that the parameters used to form the NSL masks and the physical methods required to deposit the Au-Ag thin films had large effects on the geometry properties of the nanoparticle arrays. Considering this, the different parameters used to grow the Au-Ag triangle hexagonal nanoparticle arrays were investigated. A single-layer NSL mask was formed by using self-assembly nano-scale polystyrene (PS) nanospheres with an average radius of 265 nm. At first, the concentration of the nano-scale PS nanospheres in the solution was set at 6 wt %. Two coating methods, drop-coating and spin-coating, were used to coat the nano-scale PS nanospheres as a single-layer NSL mask. From the observations of scanning electronic microscopy (SEM), we found that the matrixes of the PS nanosphere masks fabricated by using the drop-coating method were more uniform and exhibited a smaller gap than those fabricated by the spin-coating method. Next, the drop-coating method was used to form the single-layer NSL mask and the concentration of nano-scale PS nanospheres in a solution that was changed from 4 to 10 wt %, for further study. The SEM images showed that when the concentrations of PS nanospheres in the solution were 6 and 8 wt %, the matrixes of the PS nanosphere masks were more uniform than those of 4 and 10 wt %. The effects of the one-side lifting angle of substrates and the vaporization temperature for the solvent of one-layer self-assembly PS nanosphere thin films, were also investigated. Finally, the concentration of the nano-scale PS nanospheres in the solution was set at 8 wt % to form the PS nanosphere masks by the drop-coating method. Three different physical deposition methods, including thermal evaporation, radio-frequency magnetron sputtering, and e-gun deposition, were used to deposit the Au-Ag triangle hexagonal periodic nanoparticle arrays. The SEM images showed that as the single-layer PS nanosphere mask was well controlled, the thermal evaporation could deposit the Au-Ag triangle hexagonal nanoparticle arrays with a higher quality than the other two methods. PMID:28772741

Effect of the Fabrication Parameters of the Nanosphere Lithography Method on the Properties of the Deposited Au-Ag Nanoparticle Arrays.

PubMed

Liu, Jing; Chen, Chaoyang; Yang, Guangsong; Chen, Yushan; Yang, Cheng-Fu

2017-04-03

The nanosphere lithography (NSL) method can be developed to deposit the Au-Ag triangle hexagonal nanoparticle arrays for the generation of localized surface plasmon resonance. Previously, we have found that the parameters used to form the NSL masks and the physical methods required to deposit the Au-Ag thin films had large effects on the geometry properties of the nanoparticle arrays. Considering this, the different parameters used to grow the Au-Ag triangle hexagonal nanoparticle arrays were investigated. A single-layer NSL mask was formed by using self-assembly nano-scale polystyrene (PS) nanospheres with an average radius of 265 nm. At first, the concentration of the nano-scale PS nanospheres in the solution was set at 6 wt %. Two coating methods, drop-coating and spin-coating, were used to coat the nano-scale PS nanospheres as a single-layer NSL mask. From the observations of scanning electronic microscopy (SEM), we found that the matrixes of the PS nanosphere masks fabricated by using the drop-coating method were more uniform and exhibited a smaller gap than those fabricated by the spin-coating method. Next, the drop-coating method was used to form the single-layer NSL mask and the concentration of nano-scale PS nanospheres in a solution that was changed from 4 to 10 wt %, for further study. The SEM images showed that when the concentrations of PS nanospheres in the solution were 6 and 8 wt %, the matrixes of the PS nanosphere masks were more uniform than those of 4 and 10 wt %. The effects of the one-side lifting angle of substrates and the vaporization temperature for the solvent of one-layer self-assembly PS nanosphere thin films, were also investigated. Finally, the concentration of the nano-scale PS nanospheres in the solution was set at 8 wt % to form the PS nanosphere masks by the drop-coating method. Three different physical deposition methods, including thermal evaporation, radio-frequency magnetron sputtering, and e-gun deposition, were used to deposit the Au-Ag triangle hexagonal periodic nanoparticle arrays. The SEM images showed that as the single-layer PS nanosphere mask was well controlled, the thermal evaporation could deposit the Au-Ag triangle hexagonal nanoparticle arrays with a higher quality than the other two methods.

Affect of the unconscious: visually suppressed angry faces modulate our decisions.

PubMed

Almeida, Jorge; Pajtas, Petra E; Mahon, Bradford Z; Nakayama, Ken; Caramazza, Alfonso

2013-03-01

Emotional and affective processing imposes itself over cognitive processes and modulates our perception of the surrounding environment. In two experiments, we addressed the issue of whether nonconscious processing of affect can take place even under deep states of unawareness, such as those induced by interocular suppression techniques, and can elicit an affective response that can influence our understanding of the surrounding environment. In Experiment 1, participants judged the likeability of an unfamiliar item--a Chinese character--that was preceded by a face expressing a particular emotion (either happy or angry). The face was rendered invisible through an interocular suppression technique (continuous flash suppression; CFS). In Experiment 2, backward masking (BM), a less robust masking technique, was used to render the facial expressions invisible. We found that despite equivalent phenomenological suppression of the visual primes under CFS and BM, different patterns of affective processing were obtained with the two masking techniques. Under BM, nonconscious affective priming was obtained for both happy and angry invisible facial expressions. However, under CFS, nonconscious affective priming was obtained only for angry facial expressions. We discuss an interpretation of this dissociation between affective processing and visual masking techniques in terms of distinct routes from the retina to the amygdala.

Spin-on metal oxide materials for N7 and beyond patterning applications

NASA Astrophysics Data System (ADS)

Mannaert, G.; Altamirano-Sanchez, E.; Hopf, T.; Sebaai, F.; Lorant, C.; Petermann, C.; Hong, S.-E.; Mullen, S.; Wolfer, E.; Mckenzie, D.; Yao, H.; Rahman, D.; Cho, J.-Y.; Padmanaban, M.; Piumi, D.

2017-04-01

There is a growing interest in new spin on metal oxide hard mask materials for advanced patterning solutions both in BEOL and FEOL processing. Understanding how these materials respond to plasma conditions may create a competitive advantage. In this study patterning development was done for two challenging FEOL applications where the traditional Si based films were replaced by EMD spin on metal oxides, which acted as highly selective hard masks. The biggest advantage of metal oxide hard masks for advanced patterning lays in the process window improvement at lower or similar cost compared to other existing solutions.

Objective measures of binaural masking level differences and comodulation masking release based on late auditory evoked potentials.

PubMed

Epp, Bastian; Yasin, Ifat; Verhey, Jesko L

2013-12-01

The audibility of important sounds is often hampered due to the presence of other masking sounds. The present study investigates if a correlate of the audibility of a tone masked by noise is found in late auditory evoked potentials measured from human listeners. The audibility of the target sound at a fixed physical intensity is varied by introducing auditory cues of (i) interaural target signal phase disparity and (ii) coherent masker level fluctuations in different frequency regions. In agreement with previous studies, psychoacoustical experiments showed that both stimulus manipulations result in a masking release (i: binaural masking level difference; ii: comodulation masking release) compared to a condition where those cues are not present. Late auditory evoked potentials (N1, P2) were recorded for the stimuli at a constant masker level, but different signal levels within the same set of listeners who participated in the psychoacoustical experiment. The data indicate differences in N1 and P2 between stimuli with and without interaural phase disparities. However, differences for stimuli with and without coherent masker modulation were only found for P2, i.e., only P2 is sensitive to the increase in audibility, irrespective of the cue that caused the masking release. The amplitude of P2 is consistent with the psychoacoustical finding of an addition of the masking releases when both cues are present. Even though it cannot be concluded where along the auditory pathway the audibility is represented, the P2 component of auditory evoked potentials is a candidate for an objective measure of audibility in the human auditory system. Copyright © 2013 Elsevier B.V. All rights reserved.

Wafer plane inspection for advanced reticle defects

NASA Astrophysics Data System (ADS)

Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

2008-05-01

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

Recognizing speech under a processing load: dissociating energetic from informational factors.

PubMed

Mattys, Sven L; Brooks, Joanna; Cooke, Martin

2009-11-01

Effects of perceptual and cognitive loads on spoken-word recognition have so far largely escaped investigation. This study lays the foundations of a psycholinguistic approach to speech recognition in adverse conditions that draws upon the distinction between energetic masking, i.e., listening environments leading to signal degradation, and informational masking, i.e., listening environments leading to depletion of higher-order, domain-general processing resources, independent of signal degradation. We show that severe energetic masking, such as that produced by background speech or noise, curtails reliance on lexical-semantic knowledge and increases relative reliance on salient acoustic detail. In contrast, informational masking, induced by a resource-depleting competing task (divided attention or a memory load), results in the opposite pattern. Based on this clear dissociation, we propose a model of speech recognition that addresses not only the mapping between sensory input and lexical representations, as traditionally advocated, but also the way in which this mapping interfaces with general cognition and non-linguistic processes.

Scanner qualification with IntenCD based reticle error correction

NASA Astrophysics Data System (ADS)

Elblinger, Yair; Finders, Jo; Demarteau, Marcel; Wismans, Onno; Minnaert Janssen, Ingrid; Duray, Frank; Ben Yishai, Michael; Mangan, Shmoolik; Cohen, Yaron; Parizat, Ziv; Attal, Shay; Polonsky, Netanel; Englard, Ilan

2010-03-01

Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the cycle time for pre and post production-start activities. If done effectively, the matrices of base line performance established during the SAT are used as a reference for scanner performance and fleet matching monitoring and maintenance in the fab environment. Key elements which can influence the cycle time of the SAT, FAT and maintenance cycles are the imaging, process and mask characterizations involved with those cycles. Discrete mask measurement techniques are currently in use to create across-mask CDU maps. By subtracting these maps from their final wafer measurement CDU map counterparts, it is possible to assess the real scanner induced printed errors within certain limitations. The current discrete measurement methods are time consuming and some techniques also overlook mask based effects other than line width variations, such as transmission and phase variations, all of which influence the final printed CD variability. Applied Materials Aera2TM mask inspection tool with IntenCDTM technology can scan the mask at high speed, offer full mask coverage and accurate assessment of all masks induced source of errors simultaneously, making it beneficial for scanner qualifications and performance monitoring. In this paper we report on a study that was done to improve a scanner introduction and qualification process using the IntenCD application to map the mask induced CD non uniformity. We will present the results of six scanners in production and discuss the benefits of the new method.

Contribution of Binaural Masking Release to Improved Speech Intelligibility for different Masker types.

PubMed

Sutojo, Sarinah; van de Par, Steven; Schoenmaker, Esther

2018-06-01

In situations with competing talkers or in the presence of masking noise, speech intelligibility can be improved by spatially separating the target speaker from the interferers. This advantage is generally referred to as spatial release from masking (SRM) and different mechanisms have been suggested to explain it. One proposed mechanism to benefit from spatial cues is the binaural masking release, which is purely stimulus driven. According to this mechanism, the spatial benefit results from differences in the binaural cues of target and masker, which need to appear simultaneously in time and frequency to improve the signal detection. In an alternative proposed mechanism, the differences in the interaural cues improve the segregation of auditory streams, a process, which involves top-down processing rather than being purely stimulus driven. Other than the cues that produce binaural masking release, the interaural cue differences between target and interferer required to improve stream segregation do not have to appear simultaneously in time and frequency. This study is concerned with the contribution of binaural masking release to SRM for three masker types that differ with respect to the amount of energetic masking they exert. Speech intelligibility was measured, employing a stimulus manipulation that inhibits binaural masking release, and analyzed with a metric to account for the number of better-ear glimpses. Results indicate that the contribution of the stimulus-driven binaural masking release plays a minor role while binaural stream segregation and the availability of glimpses in the better ear had a stronger influence on improving the speech intelligibility. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

Hot melt extrusion of ion-exchange resin for taste masking.

PubMed

Tan, David Cheng Thiam; Ong, Jeremy Jianming; Gokhale, Rajeev; Heng, Paul Wan Sia

2018-05-30

Taste masking is important for some unpleasant tasting bioactives in oral dosage forms. Among many methods available for taste-masking, use of ion-exchange resin (IER) holds promise. IER combined with hot melt extrusion (HME) may offer additional advantages over solvent methods. IER provides taste masking by complexing with the drug ions and preventing drug dissolution in the mouth. Drug-IER complexation approaches described in literatures are mainly based either on batch processing or column eluting. These methods of drug-IER complexation have obvious limitations such as high solvent volume requirements, multiprocessing steps and extended processing time. Thus, the objective of this study was to develop a single-step, solvent-free, continuous HME process for complexation of drug-IER. The screening study evaluated drug to IER ratio, types of IER and drug complexation methods. In the screening study, a potassium salt of a weakly acidic carboxylate-based cationic IER was found suitable for the HME method. Thereafter, optimization study was conducted by varying HME process parameters such as screw speed, extrusion temperature and drug to IER ratio. It was observed that extrusion temperature and drug to IER ratio are imperative in drug-IER complexation through HME. In summary, this study has established the feasibility of a continuous complexation method for drug to IER using HME for taste masking. Copyright © 2018 Elsevier B.V. All rights reserved.

Beyond a mask and against the bottleneck: retroactive dual-task interference during working memory consolidation of a masked visual target.

PubMed

Nieuwenstein, Mark; Wyble, Brad

2014-06-01

While studies on visual memory commonly assume that the consolidation of a visual stimulus into working memory is interrupted by a trailing mask, studies on dual-task interference suggest that the consolidation of a stimulus can continue for several hundred milliseconds after a mask. As a result, estimates of the time course of working memory consolidation differ more than an order of magnitude. Here, we contrasted these opposing views by examining if and for how long the processing of a masked display of visual stimuli can be disturbed by a trailing 2-alternative forced choice task (2-AFC; a color discrimination task or a visual or auditory parity judgment task). The results showed that the presence of the 2-AFC task produced a pronounced retroactive interference effect that dissipated across stimulus onset asynchronies of 250-1,000 ms, indicating that the processing elicited by the 2-AFC task interfered with the gradual consolidation of the earlier shown stimuli. Furthermore, this interference effect occurred regardless of whether the to-be-remembered stimuli comprised a string of letters or an unfamiliar complex visual shape, and it occurred regardless of whether these stimuli were masked. Conversely, the interference effect was reduced when the memory load for the 1st task was reduced, or when the 2nd task was a color detection task that did not require decision making. Taken together, these findings show that the formation of a durable and consciously accessible working memory trace for a briefly shown visual stimulus can be disturbed by a trailing 2-AFC task for up to several hundred milliseconds after the stimulus has been masked. By implication, the current findings challenge the common view that working memory consolidation involves an immutable central processing bottleneck, and they also make clear that consolidation does not stop when a stimulus is masked. PsycINFO Database Record (c) 2014 APA, all rights reserved.

CDO budgeting

NASA Astrophysics Data System (ADS)

Nesladek, Pavel; Wiswesser, Andreas; Sass, Björn; Mauermann, Sebastian

2008-04-01

The Critical dimension off-target (CDO) is a key parameter for mask house customer, affecting directly the performance of the mask. The CDO is the difference between the feature size target and the measured feature size. The change of CD during the process is either compensated within the process or by data correction. These compensation methods are commonly called process bias and data bias, respectively. The difference between data bias and process bias in manufacturing results in systematic CDO error, however, this systematic error does not take into account the instability of the process bias. This instability is a result of minor variations - instabilities of manufacturing processes and changes in materials and/or logistics. Using several masks the CDO of the manufacturing line can be estimated. For systematic investigation of the unit process contribution to CDO and analysis of the factors influencing the CDO contributors, a solid understanding of each unit process and huge number of masks is necessary. Rough identification of contributing processes and splitting of the final CDO variation between processes can be done with approx. 50 masks with identical design, material and process. Such amount of data allows us to identify the main contributors and estimate the effect of them by means of Analysis of variance (ANOVA) combined with multivariate analysis. The analysis does not provide information about the root cause of the variation within the particular unit process, however, it provides a good estimate of the impact of the process on the stability of the manufacturing line. Additionally this analysis can be used to identify possible interaction between processes, which cannot be investigated if only single processes are considered. Goal of this work is to evaluate limits for CDO budgeting models given by the precision and the number of measurements as well as partitioning the variation within the manufacturing process. The CDO variation splits according to the suggested model into contributions from particular processes or process groups. Last but not least the power of this method to determine the absolute strength of each parameter will be demonstrated. Identification of the root cause of this variation within the unit process itself is not scope of this work.

Modular multiaperatures for light sensors

NASA Technical Reports Server (NTRS)

Rizzo, A. A.

1977-01-01

Process involves electroplating multiaperature masks as unit, eliminating alinement and assembly difficulties previously encountered. Technique may be applied to masks in automated and surveillance light systems, when precise, wide angle field of view is needed.

It's a Fine Season for Masks.

ERIC Educational Resources Information Center

Kennedy, Patricia

1999-01-01

Describes an art lesson, inspired by Giuseppe Arcimboldo's "Seasons" series, in which students construct masks representing one of the four seasons. Discusses the process and lists words and phrases associated with each season. (CMK)

Mask data processing in the era of multibeam writers

NASA Astrophysics Data System (ADS)

Abboud, Frank E.; Asturias, Michael; Chandramouli, Maesh; Tezuka, Yoshihiro

2014-10-01

Mask writers' architectures have evolved through the years in response to ever tightening requirements for better resolution, tighter feature placement, improved CD control, and tolerable write time. The unprecedented extension of optical lithography and the myriad of Resolution Enhancement Techniques have tasked current mask writers with ever increasing shot count and higher dose, and therefore, increasing write time. Once again, we see the need for a transition to a new type of mask writer based on massively parallel architecture. These platforms offer a step function improvement in both dose and the ability to process massive amounts of data. The higher dose and almost unlimited appetite for edge corrections open new windows of opportunity to further push the envelope. These architectures are also naturally capable of producing curvilinear shapes, making the need to approximate a curve with multiple Manhattan shapes unnecessary.

Vibrotactile masking experiments reveal accelerated somatosensory processing in congenitally blind braille readers.

PubMed

Bhattacharjee, Arindam; Ye, Amanda J; Lisak, Joy A; Vargas, Maria G; Goldreich, Daniel

2010-10-27

Braille reading is a demanding task that requires the identification of rapidly varying tactile patterns. During proficient reading, neighboring characters impact the fingertip at ∼100 ms intervals, and adjacent raised dots within a character at 50 ms intervals. Because the brain requires time to interpret afferent sensorineural activity, among other reasons, tactile stimuli separated by such short temporal intervals pose a challenge to perception. How, then, do proficient Braille readers successfully interpret inputs arising from their fingertips at such rapid rates? We hypothesized that somatosensory perceptual consolidation occurs more rapidly in proficient Braille readers. If so, Braille readers should outperform sighted participants on masking tasks, which demand rapid perceptual processing, but would not necessarily outperform the sighted on tests of simple vibrotactile sensitivity. To investigate, we conducted two-interval forced-choice vibrotactile detection, amplitude discrimination, and masking tasks on the index fingertips of 89 sighted and 57 profoundly blind humans. Sighted and blind participants had similar unmasked detection (25 ms target tap) and amplitude discrimination (compared with 100 μm reference tap) thresholds, but congenitally blind Braille readers, the fastest readers among the blind participants, exhibited significantly less masking than the sighted (masker, 50 Hz, 50 μm; target-masker delays, ±50 and ±100 ms). Indeed, Braille reading speed correlated significantly and specifically with masking task performance, and in particular with the backward masking decay time constant. We conclude that vibrotactile sensitivity is unchanged but that perceptual processing is accelerated in congenitally blind Braille readers.

Vibrotactile masking experiments reveal accelerated somatosensory processing in congenitally blind Braille readers

PubMed Central

Bhattacharjee, Arindam; Ye, Amanda J.; Lisak, Joy A.; Vargas, Maria G.; Goldreich, Daniel

2010-01-01

Braille reading is a demanding task that requires the identification of rapidly varying tactile patterns. During proficient reading, neighboring characters impact the fingertip at about 100-ms intervals, and adjacent raised dots within a character at 50-ms intervals. Because the brain requires time to interpret afferent sensorineural activity, among other reasons, tactile stimuli separated by such short temporal intervals pose a challenge to perception. How, then, do proficient Braille readers successfully interpret inputs arising from their fingertips at such rapid rates? We hypothesized that somatosensory perceptual consolidation occurs more rapidly in proficient Braille readers. If so, Braille readers should outperform sighted participants on masking tasks, which demand rapid perceptual processing, but would not necessarily outperform the sighted on tests of simple vibrotactile sensitivity. To investigate, we conducted two-interval forced-choice vibrotactile detection, amplitude discrimination, and masking tasks on the index fingertips of 89 sighted and 57 profoundly blind humans. Sighted and blind participants had similar unmasked detection (25-ms target tap) and amplitude discrimination (compared to 100-micron reference tap) thresholds, but congenitally blind Braille readers, the fastest readers among the blind participants, exhibited significantly less masking than the sighted (masker: 50-Hz, 50-micron; target-masker delays ±50 and ±100 ms). Indeed, Braille reading speed correlated significantly and specifically with masking task performance, and in particular with the backward masking decay time constant. We conclude that vibrotactile sensitivity is unchanged, but that perceptual processing is accelerated in congenitally blind Braille readers. PMID:20980584

Masking Treatment and its Effect on Tinnitus Parameters.

PubMed

Aytac, Ismail; Baysal, Elif; Gulsen, Secaattin; Tumuklu, Koray; Durucu, Cengiz; Mumbuc, Lütfi Semih; Kanlikama, MUzaffer

2017-12-01

Tinnitus is described as the perception of sound without any external acoustic stimulation. Any pathology of auditory pathways or any system of the human body may result with tinnitus. The pathophysiology of tinnitus accompanying the disorders of auditory system is not fully understood and there is not any particular effective treatment method has been specified. Tinnitus masking therapy has been reported as an effective treatment modality in the treatment of tinnitus. In this study, the results of tinnitus masking treatment on the parameters were evaluated prospectively. Patients with normal physical examination was enrolled in the study. Blood tests (complete blood count, biochemical analysis of lipid profile, and thyroid hormones), pure tone audiometry, tympanometric measurement of the middle ear pressure and stapedial reflexes were performed, Sixty six patients with normal results of blood tests and normal hearing thresholds with type A tympanogram were included. Tinnitus sufferers questionnaires (socio-demographics, clinical information, Tinnitus Handicap Inventory (THI), Beck Depression Inventory (BDI) was filled, audiological tests were performed, tinnitus parameters (frequency, intensity, minimal masking levels, residual inhibition) were measured. After four weeks of the treatment the questionnaires were repeated. Masking treatment for tinnitus patients resulted with significant decrease in Tinnitus Handicap Inventory and VAS scores. After four weeks of the masking treatment the questionnaire was repeated. Twenty patients did not respond to treatment. Masking therapy is one of the most effective methods of treatment for tinnitus patients. Masking therapy, that is not invasive and cost-effective has an important place in the treatment of tinnitus. Especially in a short time provides a significant reduction in tinnitus parameters.

Development for 2D pattern quantification method on mask and wafer

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Toyoda, Yasutaka; Wang, Zhigang

2010-03-01

We have developed the effective method of mask and silicon 2-dimensional metrology. The aim of this method is evaluating the performance of the silicon corresponding to Hotspot on a mask. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. 2-dimensional Shape quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. On the other hand, there is roughness in the silicon shape made from a mass-production line. Moreover, there is variation in the silicon shape. For this reason, quantification of silicon shape is important, in order to estimate the performance of a pattern. In order to quantify, the same shape is equalized in two dimensions. And the method of evaluating based on the shape is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. It is possible to analyze variability of the edge of the same position with high precision. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. - Estimate of the correlativity of shape variability and a process margin. - Determination of two-dimensional variability of pattern. - Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the shape of the same location of Design, Mask, and Silicon in such a viewpoint.

Acoustically Enhanced Electroplating Being Developed

NASA Technical Reports Server (NTRS)

Oeftering, Richard C.

2002-01-01

In cooperation with the NASA Glenn Research Center, Alchemitron Corp. is developing the Acoustically Enhanced Electroplating Process (AEEP), a new technique of employing nonlinear ultrasonics to enhance electroplating. The applications range from electroplating full-panel electronic circuit boards to electroplating microelectronics and microelectromechanical systems (MEMS) devices. In a conventional plating process, the surface area to be plated is separated from the nonplated areas by a temporary mask. The mask may take many forms, from a cured liquid coating to a simple tape. Generally, the mask is discarded when the plating is complete, creating a solid waste product that is often an environmental hazard. The labor and materials involved with the layout, fabrication, and tooling of masks is a primary source of recurring and nonrecurring production costs. The objective of this joint effort, therefore, is to reduce or eliminate the need for masks. AEEP improves selective plating processes by using directed beams of high-intensity acoustic waves to create nonlinear effects that alter the fluid dynamic and thermodynamic behavior of the plating process. It relies on two effects: acoustic streaming and acoustic heating. Acoustic streaming is observed when a high-intensity acoustic beam creates a liquid current within the beam. The liquid current can be directed as the beam is directed and, thus, users can move liquid around as desired without using pumps and nozzles. The current of the electroplating electrolyte, therefore, can be directed at distinct target areas where electroplating is desired. The current delivers fresh electrolyte to the target area while flushing away the spent electrolyte. This dramatically increases the plating rate in the target area. In addition, acoustic heating of both the liquid in the beam and the target surface increases the chemical reaction rate, which further increases the plating rate. The combined effects of acoustic streaming and heating accelerate the deposition of plating in that area and, thus, provide an effect similar to a mask but without the costs of masking. AEEP further improves the plating process by clearing debris and bubbles from the surface by acoustic radiation pressure and acoustic streaming.

Temporal mapping and analysis

NASA Technical Reports Server (NTRS)

O'Hara, Charles G. (Inventor); Shrestha, Bijay (Inventor); Vijayaraj, Veeraraghavan (Inventor); Mali, Preeti (Inventor)

2011-01-01

A compositing process for selecting spatial data collected over a period of time, creating temporal data cubes from the spatial data, and processing and/or analyzing the data using temporal mapping algebra functions. In some embodiments, the temporal data cube is creating a masked cube using the data cubes, and computing a composite from the masked cube by using temporal mapping algebra.

Suppression of Mirror Generalization for Reversible Letters: Evidence from Masked Priming

ERIC Educational Resources Information Center

Perea, Manuel; Moret-Tatay, Carmen; Panadero, Victoria

2011-01-01

Readers of the Roman script must "unlearn" some forms of mirror generalization when processing printed stimuli (i.e., herb and herd are different words). Here we examine whether the suppression of mirror generalization is a process that affects all letters or whether it mostly affects reversible letters (i.e., b/d). Three masked priming lexical…

Nanofabrication on unconventional substrates using transferred hard masks

DOE PAGES

Li, Luozhou; Bayn, Igal; Lu, Ming; ...

2015-01-15

Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantationmore » are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.« less

Filter quality of electret masks in filtering 14.6–594 nm aerosol particles: Effects of five decontamination methods

PubMed Central

Lin, Tzu-Hsien; Chen, Chih-Chieh; Kuo, Chung-Wen

2017-01-01

This study investigates the effects of five decontamination methods on the filter quality (qf) of three commercially available electret masks—N95, Gauze and Spunlace nonwoven masks. Newly developed evaluation methods, the overall filter quality (qf,o) and the qf ratio were applied to evaluate the effectiveness of decontamination methods for respirators. A scanning mobility particle sizer is utilized to measure the concentration of polydispersed particles with diameter 14.6–594 nm. The penetration of particles and pressure drop (Δp) through the mask are used to determine qf and qf,o. Experimental results reveal that the most penetrating particle size (MPS) for the pre-decontaminated N95, Gauze and Spunlace masks were 118 nm, 461 nm and 279 nm, respectively, and the respective penetration rates were 2.6%, 23.2% and 70.0%. The Δp through the pretreated N95 masks was 9.2 mm H2O at the breathing flow rate of heavy-duty workers, exceeding the Δp values obtained through Gauze and Spunlace masks. Decontamination increased the sizes of the most penetrating particles, changing the qf values of all of the masks: qf fell as particle size increased because the penetration increased. Bleach increased the Δp of N95, but destroyed the Gauze mask. However, the use of an autoclave reduces the Δp values of both the N95 and the Gauze mask. Neither the rice cooker nor ethanol altered the Δp of the Gauze mask. Chemical decontamination methods reduced the qf,o values for the three electret masks. The value of qf,o for PM0.1 exceeded that for PM0.1–0.6, because particles smaller than 100 nm had lower penetration, resulting in a better qf for a given pressure drop. The values of qf,o, particularly for PM0.1, reveal that for the tested treatments and masks, physical decontamination methods are less destructive to the filter than chemical methods. Nevertheless, when purchasing new or reusing FFRs, penetration should be regarded as the priority. PMID:29023492

New method of contour-based mask-shape compiler

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Sugiyama, Akiyuki; Onizawa, Akira; Sato, Hidetoshi; Toyoda, Yasutaka

2007-10-01

We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

Mask industry assessment: 2008

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2008-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

Mask industry assessment trend analysis: 2010

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2010-05-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the eighth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Its results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2009. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

The 2002 to 2010 mask survey trend analysis

NASA Astrophysics Data System (ADS)

Hughes, Greg; Chan, David

2011-03-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the ninth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Results will be used to guide future investments in critical path issues. This year's survey is basically the same as the 2005 through 2010 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that ultimately create a detailed profile of both the business and technical status of the critical mask industry.

Rigorous diffraction analysis using geometrical theory of diffraction for future mask technology

NASA Astrophysics Data System (ADS)

Chua, Gek S.; Tay, Cho J.; Quan, Chenggen; Lin, Qunying

2004-05-01

Advanced lithographic techniques such as phase shift masks (PSM) and optical proximity correction (OPC) result in a more complex mask design and technology. In contrast to the binary masks, which have only transparent and nontransparent regions, phase shift masks also take into consideration transparent features with a different optical thickness and a modified phase of the transmitted light. PSM are well-known to show prominent diffraction effects, which cannot be described by the assumption of an infinitely thin mask (Kirchhoff approach) that is used in many commercial photolithography simulators. A correct prediction of sidelobe printability, process windows and linearity of OPC masks require the application of rigorous diffraction theory. The problem of aerial image intensity imbalance through focus with alternating Phase Shift Masks (altPSMs) is performed and compared between a time-domain finite-difference (TDFD) algorithm (TEMPEST) and Geometrical theory of diffraction (GTD). Using GTD, with the solution to the canonical problems, we obtained a relationship between the edge on the mask and the disturbance in image space. The main interest is to develop useful formulations that can be readily applied to solve rigorous diffraction for future mask technology. Analysis of rigorous diffraction effects for altPSMs using GTD approach will be discussed.

The relationship between masking and short-term consolidation during recall from visual working memory.

PubMed

Ricker, Timothy J; Sandry, Joshua

2018-04-10

The presentation of a similar but irrelevant stimulus immediately following presentation of a memory item is called masking. Masking is known to reduce performance on working memory tests. This is the type of memory used to hold information in mind for brief periods of time for use in ongoing cognition. Two approaches to understanding masking effects have been proposed in different literatures. Working memory researchers often assume that the reduction in working memory performance after masking is because masking interferes with a transient sensory representation that is needed to complete consolidation into a working memory state. Researchers focused on the attentional blink, a finding that attention cannot be directed to new stimuli during working memory consolidation, have an alternative theory. Attentional blink researchers assume that masking slows the short-term consolidation process, thereby extending the length of the attentional blink. In two experiments, we contrast these two approaches to explaining masking effects and investigate the validity of both hypotheses. Some aspects of both approaches are validated, but neither theoretical perspective alone sufficiently explains the entire pattern of results. © 2018 New York Academy of Sciences.

Fluctuation scaling in the visual cortex at threshold

NASA Astrophysics Data System (ADS)

Medina, José M.; Díaz, José A.

2016-05-01

Fluctuation scaling relates trial-to-trial variability to the average response by a power function in many physical processes. Here we address whether fluctuation scaling holds in sensory psychophysics and its functional role in visual processing. We report experimental evidence of fluctuation scaling in human color vision and form perception at threshold. Subjects detected thresholds in a psychophysical masking experiment that is considered a standard reference for studying suppression between neurons in the visual cortex. For all subjects, the analysis of threshold variability that results from the masking task indicates that fluctuation scaling is a global property that modulates detection thresholds with a scaling exponent that departs from 2, β =2.48 ±0.07 . We also examine a generalized version of fluctuation scaling between the sample kurtosis K and the sample skewness S of threshold distributions. We find that K and S are related and follow a unique quadratic form K =(1.19 ±0.04 ) S2+(2.68 ±0.06 ) that departs from the expected 4/3 power function regime. A random multiplicative process with weak additive noise is proposed based on a Langevin-type equation. The multiplicative process provides a unifying description of fluctuation scaling and the quadratic S -K relation and is related to on-off intermittency in sensory perception. Our findings provide an insight into how the human visual system interacts with the external environment. The theoretical methods open perspectives for investigating fluctuation scaling and intermittency effects in a wide variety of natural, economic, and cognitive phenomena.

Utilization of optical emission endpoint in photomask dry etch processing

NASA Astrophysics Data System (ADS)

Faure, Thomas B.; Huynh, Cuc; Lercel, Michael J.; Smith, Adam; Wagner, Thomas

2002-03-01

Use of accurate and repeatable endpoint detection during dry etch processing of photomask is very important for obtaining good mask mean-to-target and CD uniformity performance. It was found that the typical laser reflectivity endpoint detecting system used on photomask dry etch systems had several key limitations that caused unnecessary scrap and non-optimum image size performance. Consequently, work to develop and implement use of a more robust optical emission endpoint detection system for chrome dry etch processing of photomask was performed. Initial feasibility studies showed that the emission technique was sensitive enough to monitor pattern loadings on contact and via level masks down to 3 percent pattern coverage. Additional work was performed to further improve this to 1 percent pattern coverage by optimizing the endpoint detection parameters. Comparison studies of mask mean-to-target performance and CD uniformity were performed with the use of optical emission endpoint versus laser endpoint for masks built using TOK IP3600 and ZEP 7000 resist systems. It was found that an improvement in mean-to-target performance and CD uniformity was realized on several types of production masks. In addition, part-to-part endpoint time repeatability was found to be significantly improved with the use of optical emission endpoint.

3D Stacked Memory Final Report CRADA No. TC-0494-93

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernhardt, A.; Beene, G.

TI and LLNL demonstrated: (1) a process for the fabrication of 3-D memory using stacked DRAM chips, and (2) a fast prototyping process for 3-D stacks and MCMs. The metallization to route the chip pads to the sides of the die was carried out in a single high-speed masking step. The mask was not the usual physical one in glass and chrome, but was simply a computer file used to control the laser patterning process. Changes in either chip or customer circuit-board pad layout were easily and inexpensively accommodated, so that prototyping was a natural consequence of the laser patterningmore » process. As in the current TI process, a dielectric layer was added to the wafer, and vias to the chip I/0 pads were formed. All of the steps in Texas Instruments earlier process that were required to gold bump the pads were eliminated, significantly reducing fabrication cost and complexity. Pads were created on the sides of ·the die, which became pads on the side of the stack. In order to extend the process to accommodate non-memory devices with substantially greater I/0 than is required for DRAMs, pads were patterned on two sides of the memory stacks as a proof of principle. Stacking and bonding were done using modifications of the current TI process. After stacking and bonding, the pads on the sides of the dice were connected by application of a polyimide insulator film with laser ablation of the polyimide to form contacts to the pads. Then metallization was accomplished in the same manner as on the individual die.« less

Oral mask ventilation is more effective than face mask ventilation after nasal surgery.

PubMed

Yazicioğlu, Dilek; Baran, Ilkay; Uzumcugil, Filiz; Ozturk, Ibrahim; Utebey, Gulten; Sayın, M Murat

2016-06-01

To evaluate and compare the face mask (FM) and oral mask (OM) ventilation techniques during anesthesia emergence regarding tidal volume, leak volume, and difficult mask ventilation (DMV) incidence. Prospective, randomized, crossover study. Operating room, training and research hospital. American Society of Anesthesiologists physical status I and II adult patients scheduled for nasal surgery. Patients in group FM-OM received FM ventilation first, followed by OM ventilation, and patients in group OM-FM received OM ventilation first, followed by FM ventilation, with spontaneous ventilation after deep extubation. The FM ventilation was applied with the 1-handed EC-clamp technique. The OM was placed only over the mouth, and the 1-handed EC-clamp technique was used again. A child's size FM was used for the OM ventilation technique, the mask was rotated, and the inferior part of the mask was placed toward the nose. The leak volume (MVleak), mean airway pressure (Pmean), and expired tidal volume (TVe) were assessed with each mask technique for 3 consecutive breaths. A mask ventilation grade ≥3 was considered DMV. DMV occurred more frequently during FM ventilation (75% with FM vs 8% with OM). In the FM-first sequence, the mean TVe was 249±61mL with the FM and 455±35mL with the OM (P=.0001), whereas in the OM-first sequence, it was 276±81mL with the FM and 409±37mL with the OM (P=.0001). Regardless of the order used, the OM technique significantly decreased the MVleak and increased the TVe when compared to the FM technique. During anesthesia emergence after nasal surgery the OM may offer an effective ventilation method as it decreases the incidence of DMV and the gas leak around the mask and provides higher tidal volume delivery compared with FM ventilation. Copyright © 2016 Elsevier Inc. All rights reserved.

A Novel Strategy for Bitter Taste Masking of Gankeshuangqing Dispersible Tablets Based on Particle Coating Technology.

PubMed

Han, Xue; Zhang, Ding-Kun; Zhang, Fang; Lin, Jun-Zhi; Jiang, Hong; Lan, Yang; Xiong, Xi; Han, Li; Yang, Ming; Fu, Chao-Mei

2017-01-01

Currently, acute upper respiratory tract infections (AURTIs) are increasingly becoming a significant health burden. Gankeshuangqing dispersible tablets (GKSQDT) which have a good effect on treating AURTIs. GKSQDT is composed of baicalin and andrographolide. However, its severe bitterness limits application of patients. Due to the addition of plentiful accessories, common masking methods are unsuitable for GKSQDT. It is thus necessary to develop a new masking method. The Previous study showed that baicalin was less bitter than andrographolide. Thus, particle coating technology was adapted to prepare composite particles that baicalin coated on the surface of andrographolide to decrease bitterness. Initially, particle size of baicalin and coating time of composite was investigated to prepare composite. Then, scanning electron microscopy, wettability, and infrared (IR) spectrogram were used to characterize the microstructure of composite. Furthermore, electronic tongue test, animal preference experiment, and human sensory test were applied to evaluate the masking effect. To produce composite, baicalin should be ground in vibromill for 6 min. Then, andrographolide fine powder was added to grind together for 6 min. Contact angle of composite was smaller than mixture, and more similar to baicalin. Other physical characterization including microstructure, wettability, and IR also suggested that andrographolide was successfully coated by baicalin superfine. Furthermore, taste-masking test indicated taste-masked tablets was less bitter than original tablets. The study indicated that particle coating technology can be used for taste masking of GKSQDT without adding other substance. Moreover, it provides a new strategy of taste masking for national medicine. A new strategy to mask bitterness without adding any other substance based on coating technology was providedThe masking effect was confirmed by electronic tongue test, animal preference experiment and human sensory test. Abbreviations used: AURTIs: Acute Upper Respiratory Tract Infections; GSQDT: Gankeshuangqing Dispersible Tablets; IR: Infrared Spectrogram; LHPC: Low-substituted Hydroxypropyl Cellulose; CAs: Contact Angles; FTIR: Fourier Transform Infrared Spectra.

The STARD Statement for Reporting Diagnostic Accuracy Studies: Application to the History and Physical Examination

PubMed Central

Rennie, Drummond; Bossuyt, Patrick M. M.

2008-01-01

Summary Objective The Standards for Reporting of Diagnostic Accuracy (STARD) statement provided guidelines for investigators conducting diagnostic accuracy studies. We reviewed each item in the statement for its applicability to clinical examination diagnostic accuracy research, viewing each discrete aspect of the history and physical examination as a diagnostic test. Setting Nonsystematic review of the STARD statement. Interventions Two former STARD Group participants and 1 editor of a journal series on clinical examination research reviewed each STARD item. Suggested interpretations and comments were shared to develop consensus. Measurements and Main Results The STARD Statement applies generally well to clinical examination diagnostic accuracy studies. Three items are the most important for clinical examination diagnostic accuracy studies, and investigators should pay particular attention to their requirements: describe carefully the patient recruitment process, describe participant sampling and address if patients were from a consecutive series, and describe whether the clinicians were masked to the reference standard tests and whether the interpretation of the reference standard test was masked to the clinical examination components or overall clinical impression. The consideration of these and the other STARD items in clinical examination diagnostic research studies would improve the quality of investigations and strengthen conclusions reached by practicing clinicians. Conclusions The STARD statement provides a very useful framework for diagnostic accuracy studies. The group correctly anticipated that there would be nuances applicable to studies of the clinical examination. We offer guidance that should enhance their usefulness to investigators embarking on original studies of a patient’s history and physical examination. PMID:18347878

Masking interrupts figure-ground signals in V1.

PubMed

Lamme, Victor A F; Zipser, Karl; Spekreijse, Henk

2002-10-01

In a backward masking paradigm, a target stimulus is rapidly (<100 msec) followed by a second stimulus. This typically results in a dramatic decrease in the visibility of the target stimulus. It has been shown that masking reduces responses in V1. It is not known, however, which process in V1 is affected by the mask. In the past, we have shown that in V1, modulations of neural activity that are specifically related to figure-ground segregation can be recorded. Here, we recorded from awake macaque monkeys, engaged in a task where they had to detect figures from background in a pattern backward masking paradigm. We show that the V1 figure-ground signals are selectively and fully suppressed at target-mask intervals that psychophysically result in the target being invisible. Initial response transients, signalling the features that make up the scene, are not affected. As figure-ground modulations depend on feedback from extrastriate areas, these results suggest that masking selectively interrupts the recurrent interactions between V1 and higher visual areas.

PMJ panel discussion overview on mask complexities, cost, and cycle time in 32-nm system LSI generation: conflict or concurrent?

NASA Astrophysics Data System (ADS)

Hosono, Kunihiro; Kato, Kokoro

2008-10-01

This is a report on a panel discussion organized in Photomask Japan 2008, where the challenges about "Mask Complexities, Cost, and Cycle Time in 32-nm System LSI Generation" were addressed to have a look over the possible solutions from the standpoints of chipmaker, commercial mask shop, DA tool vendor and equipments makers. The wrap-up is as follows: Mask complexities justify the mask cost, while the acceptable increase rate of 32nm-mask cost significantly differs between mask suppliers or users side. The efficiency progress by new tools or DFM has driven their cycle-time reductions. Mask complexities and cost will be crucial issues prior to cycle time, and there seems to be linear correlation between them. Controlling complexity and cycle time requires developing a mix of advanced technologies, and especially for cost reduction, shot prices in writers and processing rates in inspection tools have been improved remarkably by tool makers. In addition, activities of consortium in Japan (Mask D2I) are expected to enhance the total optimization of mask design, writing and inspection. The cycle-time reduction potentially drives the lowering of mask cost, and, on the other, the pattern complexities and tighter mask specifications get in the way to 32nm generation as well as the nano-economics and market challenges. There are still many difficult problems in mask manufacturing now, and we are sure to go ahead to overcome a 32nm hurdle with the advances of technologies and collaborations by not only technologies but also finance.

Asymmetric multiple information cryptosystem based on chaotic spiral phase mask and random spectrum decomposition

NASA Astrophysics Data System (ADS)

Rafiq Abuturab, Muhammad

2018-01-01

A new asymmetric multiple information cryptosystem based on chaotic spiral phase mask (CSPM) and random spectrum decomposition is put forwarded. In the proposed system, each channel of secret color image is first modulated with a CSPM and then gyrator transformed. The gyrator spectrum is randomly divided into two complex-valued masks. The same procedure is applied to multiple secret images to get their corresponding first and second complex-valued masks. Finally, first and second masks of each channel are independently added to produce first and second complex ciphertexts, respectively. The main feature of the proposed method is the different secret images encrypted by different CSPMs using different parameters as the sensitive decryption/private keys which are completely unknown to unauthorized users. Consequently, the proposed system would be resistant to potential attacks. Moreover, the CSPMs are easier to position in the decoding process owing to their own centering mark on axis focal ring. The retrieved secret images are free from cross-talk noise effects. The decryption process can be implemented by optical experiment. Numerical simulation results demonstrate the viability and security of the proposed method.

Future reticle demand and next-generation lithography technologies

NASA Astrophysics Data System (ADS)

Behringer, Uwe F. W.; Ehrlich, Christian; Fortange, Olaf

1999-04-01

Mask technology has often been considered an enabling for semiconductor fabrication. But today photomasks have evolved to a bottle neck in the every increasing integration process of semiconductor circuits. Regarding to the 1997 SIA roadmap there are very stringent requirements for mask making. Even with the momentary weak Asian market the worldwide demand for reticles will continue to grow. The anticipation of larger reticles has been discussed over years. What ever the reason for the need of larger reticles, the move to the 230 mm X 230 mm reticle size will provide size will provide unique challenges to both the mask equipment manufacturers and mask fabricator. Next Generation Lithography together with their mask techniques are in development and try to come into the market.

Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

NASA Astrophysics Data System (ADS)

Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

2011-03-01

Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

The neural processing of masked speech

PubMed Central

Scott, Sophie K; McGettigan, Carolyn

2014-01-01

Spoken language is rarely heard in silence, and a great deal of interest in psychoacoustics has focused on the ways that the perception of speech is affected by properties of masking noise. In this review we first briefly outline the neuroanatomy of speech perception. We then summarise the neurobiological aspects of the perception of masked speech, and investigate this as a function of masker type, masker level and task. PMID:23685149

Probing feedforward and feedback contributions to awareness with visual masking and transcranial magnetic stimulation.

PubMed

Tapia, Evelina; Beck, Diane M

2014-01-01

A number of influential theories posit that visual awareness relies not only on the initial, stimulus-driven (i.e., feedforward) sweep of activation but also on recurrent feedback activity within and between brain regions. These theories of awareness draw heavily on data from masking paradigms in which visibility of one stimulus is reduced due to the presence of another stimulus. More recently transcranial magnetic stimulation (TMS) has been used to study the temporal dynamics of visual awareness. TMS over occipital cortex affects performance on visual tasks at distinct time points and in a manner that is comparable to visual masking. We draw parallels between these two methods and examine evidence for the neural mechanisms by which visual masking and TMS suppress stimulus visibility. Specifically, both methods have been proposed to affect feedforward as well as feedback signals when applied at distinct time windows relative to stimulus onset and as a result modify visual awareness. Most recent empirical evidence, moreover, suggests that while visual masking and TMS impact stimulus visibility comparably, the processes these methods affect may not be as similar as previously thought. In addition to reviewing both masking and TMS studies that examine feedforward and feedback processes in vision, we raise questions to guide future studies and further probe the necessary conditions for visual awareness.

3D printed facial laser scans for the production of localised radiotherapy treatment masks - A case study.

PubMed

Briggs, Matthew; Clements, Helen; Wynne, Neil; Rennie, Allan; Kellett, Darren

This study investigates the use of 3D printing for patients that require localised radiotherapy treatment to the face. The current process involves producing a lead mask in order to protect the healthy tissue from the effects of the radiotherapy. The mask is produced by applying a thermoplastic sheet to the patient's face and allowing to set hard. This can then be used as a mould to create a plaster impression of the patient's face. A sheet of lead is then hammered on to the plaster to create a bespoke fitted face mask. This process can be distressing for patients and can be problematic when the patient is required to remain motionless for a prolonged time while the thermoplastic sets. In this study, a 1:1 scale 3D print of a patient's face was generated using a laser scanner. The lead was hammered directly on to the surface of the 3D print in order to create a bespoke fitted treatment mask. This eliminated the thermoplastic moulding stage and significantly reduced the time needed for the patient to be in clinic. The higher definition impression of the the face resulted in a more accurate, better fitting treatment mask.

Metal oxide multilayer hard mask system for 3D nanofabrication

NASA Astrophysics Data System (ADS)

Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

2018-02-01

We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

Unconscious processing of facial affect in children and adolescents.

PubMed

Killgore, William D S; Yurgelun-Todd, Deborah A

2007-01-01

In a previous study, with adults, we demonstrated that the amygdala and anterior cingulate gyrus are differentially responsive to happy and sad faces presented subliminally. Because the ability to perceive subtle facial signals communicating sadness is an important aspect of prosocial development, and is critical for empathic behavior, we examined this phenomenon from a developmental perspective using a backward masking paradigm. While undergoing functional magnetic resonance imaging (fMRI), 10 healthy adolescent children were presented with a series of happy and sad facial expressions, each lasting 20 ms and masked immediately by a neutral face to prevent conscious awareness of the affective expression. Relative to fixation baseline, masked sad faces activated the right amygdala, whereas masked happy faces failed to activate any of the regions of interest. Direct comparison between masked happy and sad faces revealed valence specific differences in the anterior cingulate gyrus. When the data were compared statistically to our previous sample of adults, the adolescent group showed significantly greater activity in the right amygdala relative to the adults during the masked sad condition. Groups also differed in several non-hypothesized regions. Development of unconscious perception from adolescence into adulthood appears to be accompanied by reduced activity within limbic affect processing systems, and perhaps increased involvement of other cortical and cerebellar systems.

Reservoir computing with a slowly modulated mask signal for preprocessing using a mutually coupled optoelectronic system

NASA Astrophysics Data System (ADS)

Tezuka, Miwa; Kanno, Kazutaka; Bunsen, Masatoshi

2016-08-01

Reservoir computing is a machine-learning paradigm based on information processing in the human brain. We numerically demonstrate reservoir computing with a slowly modulated mask signal for preprocessing by using a mutually coupled optoelectronic system. The performance of our system is quantitatively evaluated by a chaotic time series prediction task. Our system can produce comparable performance with reservoir computing with a single feedback system and a fast modulated mask signal. We showed that it is possible to slow down the modulation speed of the mask signal by using the mutually coupled system in reservoir computing.

Data-derived symbol synchronization of MASK and QASK signals. [for multilevel digital communication systems

NASA Technical Reports Server (NTRS)

Simon, M. K.

1974-01-01

Multilevel amplitude-shift-keying (MASK) and quadrature amplitude-shift-keying (QASK) as signaling techniques for multilevel digital communications systems, and the problem of providing symbol synchronization in the receivers of such systems are discussed. A technique is presented for extracting symbol sync from an MASK or QASK signal. The scheme is a generalization of the data transition tracking loop used in PSK systems. The performance of the loop was analyzed in terms of its mean-squared jitter and its effects on the data detection process in MASK and QASK systems.

Method for correcting imperfections on a surface

DOEpatents

Sweatt, William C.; Weed, John W.

1999-09-07

A process for producing near perfect optical surfaces. A previously polished optical surface is measured to determine its deviations from the desired perfect surface. A multi-aperture mask is designed based on this measurement and fabricated such that deposition through the mask will correct the deviations in the surface to an acceptable level. Various mask geometries can be used: variable individual aperture sizes using a fixed grid for the apertures or fixed aperture sizes using a variable aperture spacing. The imperfections are filled in using a vacuum deposition process with a very thin thickness of material such as silicon monoxide to produce an amorphous surface that bonds well to a glass substrate.

1D design style implications for mask making and CEBL

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2013-09-01

At advanced nodes, CMOS logic is being designed in a highly regular design style because of the resolution limitations of optical lithography equipment. Logic and memory layouts using 1D Gridded Design Rules (GDR) have been demonstrated to nodes beyond 12nm.[1-4] Smaller nodes will require the same regular layout style but with multiple patterning for critical layers. One of the significant advantages of 1D GDR is the ease of splitting layouts into lines and cuts. A lines and cuts approach has been used to achieve good pattern fidelity and process margin to below 12nm.[4] Line scaling with excellent line-edge roughness (LER) has been demonstrated with self-aligned spacer processing.[5] This change in design style has important implications for mask making: • The complexity of the masks will be greatly reduced from what would be required for 2D designs with very complex OPC or inverse lithography corrections. • The number of masks will initially increase, as for conventional multiple patterning. But in the case of 1D design, there are future options for mask count reduction. • The line masks will remain simple, with little or no OPC, at pitches (1x) above 80nm. This provides an excellent opportunity for continual improvement of line CD and LER. The line pattern will be processed through a self-aligned pitch division sequence to divide pitch by 2 or by 4. • The cut masks can be done with "simple OPC" as demonstrated to beyond 12nm.[6] Multiple simple cut masks may be required at advanced nodes. "Coloring" has been demonstrated to below 12nm for two colors and to 8nm for three colors. • Cut/hole masks will eventually be replaced by e-beam direct write using complementary e-beam lithography (CEBL).[7-11] This transition is gated by the availability of multiple column e-beam systems with throughput adequate for high- volume manufacturing. A brief description of 1D and 2D design styles will be presented, followed by examples of 1D layouts. Mask complexity for 1D layouts patterned directly will be compared to mask complexity for lines and cuts at nodes larger than 20nm. No such comparison is possible below 20nm since single-patterning does not work below ~80nm pitch using optical exposure tools. Also discussed will be recently published wafer results for line patterns with pitch division by-2 and by-4 at sub-12nm nodes, plus examples of post-etch results for 1D patterns done with cut masks and compared to cuts exposed by a single-column e-beam direct write system.

The influence of expertise and of physical complexity on visual short-term memory consolidation.

PubMed

Sun, Huiming; Zimmer, Hubert D; Fu, Xiaolan

2011-04-01

We investigated whether the expertise of a perceiver and the physical complexity of a stimulus influence consolidation of visual short-term memory (VSTM) in a S1-S2 (Stimulus 1-Stimulus 2) change detection task. Consolidation is assumed to make transient perceptual representations in VSTM more durable, and it is investigated by postexposure of a mask shortly after offset of the perceived stimulus (S1; 17 to 483 ms). We presented colours, Chinese characters, pseudocharacters, and novel symbols to novices (Germans) or experts of Chinese language (Chinese readers). Physical complexity was manipulated by the number of strokes. Unfamiliar material was remembered worse than familiar material (Experiments 1, 2, and 3). For novices the absolute VSTM performance was better for physically simple than for complex material, whereas for experts the complexity did not matter-Chinese readers memorized Chinese characters (Experiment 3). Articulatory suppression did not change these effects (Experiment 2). We always observed a strong effect of SOA, but this effect was influenced neither by physical complexity nor by expertise; only the length of the interstimulus interval between S1 and the mask was relevant. This was observed even with short stimulus onset asynchrony (SOA) of 100 ms (Experiment 2) and in comparing colours and characters (Experiment 5). However, masks impaired memory if they were presented at the locations of the to-be-memorized items, but not beside them-that is, interference was location-based (Experiment 6). We explain the effect of SOA by the assumption that it takes time to stop encoding of information presented at item locations with the offset of S1. The increasing resistance against interference by irrelevant material appears as consolidation of S1.

Simulation based mask defect repair verification and disposition

NASA Astrophysics Data System (ADS)

Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

2009-10-01

As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple optical model can be used to get simulated aerial image intensity in the AOI. With built-in contour analysis functions, the SMDD software can easily compare the contour (or intensity) differences between defect pattern and normal pattern. With user provided judging criteria, this software can be easily disposition the defect based on contour comparison. In addition, process sensitivity properties, like MEEF and NILS, can be readily obtained in the AOI with a lithography model, which will make mask defect disposition criteria more intelligent.

Orthographic and Phonological Contributions to Reading Development: Tracking Developmental Trajectories Using Masked Priming

ERIC Educational Resources Information Center

Ziegler, Johannes C.; Bertrand, Daisy; Lété, Bernard; Grainger, Jonathan

2014-01-01

The present study used a variant of masked priming to track the development of 2 marker effects of orthographic and phonological processing from Grade 1 through Grade 5 in a cross-sectional study. Pseudohomophone (PsH) priming served as a marker for phonological processing, whereas transposed-letter (TL) priming was a marker for coarse-grained…

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ting

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE processmore » is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.« less

Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

NASA Astrophysics Data System (ADS)

Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

2006-09-01

Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 × 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si.

Development of a data management front end for use with a LANDSAT based information system. [assessing gypsy moth defoliation damage in Pennsylvania

NASA Technical Reports Server (NTRS)

Turner, B. J. (Principal Investigator)

1982-01-01

A user friendly front end was constructed to facilitate access to the LANDSAT mosaic data base supplied by JPL and to process both LANDSAT and ancillary data. Archieval and retrieval techniques were developed to efficiently handle this data base and make it compatible with requirements of the Pennsylvania Bureau of Forestry. Procedures are ready for: (1) forming the forest/nonforest mask in ORSER compressed map format using GSFC-supplied classification procedures; (2) registering data from a new scene (defoliated) to the mask (which may involve mosaicking if the area encompasses two LANDSAT scenes; (3) producing a masked new data set using the MASK program; (4) analyzing this data set to produce a map showing degrees of defoliation, output on the Versatec plotter; and (5) producing color composite maps by a diazo-type process.

The temporal dynamics of masked repetition picture priming effects: manipulations of stimulus-onset asynchrony (SOA) and prime duration

PubMed Central

Eddy, Marianna D.; Holcomb, Phillip J.

2010-01-01

The current study used event-related potentials (ERPs) and masked repetition priming to examine the time-course of picture processing. We manipulated the stimulus-onset asynchrony (110 ms, 230 ms, 350 ms, 470 ms) between repeated and unrepeated prime-target pairs while holding the prime duration constant (50 ms) (Experiment 1) as well as the prime duration (30 ms, 50 ms, 70 ms, 90 ms) (Experiment 2) with a constant SOA of 110 ms in a masked repetition priming paradigm with pictures. The aim of this study was to further elucidate the mechanisms underlying previously observed ERP components in masked priming with pictures. We found both the N/P190 and N400 are modulated by changes in prime duration and SOA, however, it appears that longer prime exposure rather than a longer SOA leads to more in-depth processing as indexed by larger N400 effects. PMID:20403342

Cloud Motion in the GOCI COMS Ocean Colour Data

NASA Technical Reports Server (NTRS)

Robinson, Wayne D.; Franz, Bryan A.; Mannino, Antonio; Ahn, Jae-Hyun

2016-01-01

The Geostationary Ocean Colour Imager (GOCI) instrument, on Koreas Communications, Oceans, and Meteorological Satellite (COMS), can produce a spectral artefact arising from the motion of clouds the cloud is spatially shifted and the amount of shift varies by spectral band. The length of time it takes to acquire all eight GOCI bands for a given slot (portion of a scene) is sucient to require that cloud motion be taken into account to fully mask or correct the eects of clouds in all bands. Inter-band correlations can be used to measure the amount of cloud shift, which can then be used to adjust the cloud mask so that the union of all shifted masks can act as a mask for all bands. This approach reduces the amount of masking required versus a simple expansion of the mask in all directions away from clouds. Cloud motion can also aect regions with unidentied clouds thin or fractional clouds that evade the cloud identication process yielding degraded quality in retrieved ocean colour parameters. Areas with moving and unidentied clouds require more elaborate masking algo-rithms to remove these degraded retrievals. Correction for the eects of moving fractional clouds may also be possible. The cloud shift information can be used to determine cloud motion and thus wind at the cloud levels on sub-minute timescales. The benecial and negative eects of moving clouds should be con-sidered for any ocean colour instrument design and associated data processing plans.

Assisted suicide by oxygen deprivation with helium at a Swiss right-to-die organisation.

PubMed

Ogden, Russel D; Hamilton, William K; Whitcher, Charles

2010-03-01

In Switzerland, right-to-die organisations assist their members with suicide by lethal drugs, usually barbiturates. One organisation, Dignitas, has experimented with oxygen deprivation as an alternative to sodium pentobarbital. To analyse the process of assisted suicide by oxygen deprivation with helium and a common face mask and reservoir bag. This study examined four cases of assisted suicide by oxygen deprivation using helium delivered via a face mask. Videos of the deaths were provided by the Zurich police. Dignitas provided protocol and consent information. One man and three women were assisted to death by oxygen deprivation. There was wide variation in the time to unconsciousness and the time to death, probably due to the poor mask fit. Swiss law prevented attendants from effectively managing the face mask apparatus. Purposeless movements of the extremities were disconcerting for Dignitas attendants, who are accustomed to assisting suicide with barbiturates. None of the dying individuals attempted self-rescue. The dying process of oxygen deprivation with helium is potentially quick and appears painless. It also bypasses the prescribing role of physicians, effectively demedicalising assisted suicide. Oxygen deprivation with a face mask is not acceptable because leaks are difficult to control and it may not eliminate rebreathing. These factors will extend time to unconsciousness and time to death. A hood method could reduce the problem of mask fit. With a hood, a flow rate of helium sufficient to provide continuous washout of expired gases would remedy problems observed with the mask.

Affect of the unconscious: Visually suppressed angry faces modulate our decisions

PubMed Central

Pajtas, Petra E.; Mahon, Bradford Z.; Nakayama, Ken; Caramazza, Alfonso

2016-01-01

Emotional and affective processing imposes itself over cognitive processes and modulates our perception of the surrounding environment. In two experiments, we addressed the issue of whether nonconscious processing of affect can take place even under deep states of unawareness, such as those induced by interocular suppression techniques, and can elicit an affective response that can influence our understanding of the surrounding environment. In Experiment 1, participants judged the likeability of an unfamiliar item—a Chinese character—that was preceded by a face expressing a particular emotion (either happy or angry). The face was rendered invisible through an interocular suppression technique (continuous flash suppression; CFS). In Experiment 2, backward masking (BM), a less robust masking technique, was used to render the facial expressions invisible. We found that despite equivalent phenomenological suppression of the visual primes under CFS and BM, different patterns of affective processing were obtained with the two masking techniques. Under BM, nonconscious affective priming was obtained for both happy and angry invisible facial expressions. However, under CFS, nonconscious affective priming was obtained only for angry facial expressions. We discuss an interpretation of this dissociation between affective processing and visual masking techniques in terms of distinct routes from the retina to the amygdala. PMID:23224765

The MEMS process of a micro friction sensor

NASA Astrophysics Data System (ADS)

Yuan, Ming-Quan; Lei, Qiang; Wang, Xiong

2018-02-01

The research and testing techniques of friction sensor is an important support for hypersonic aircraft. Compared with the conventional skin friction sensor, the MEMS skin friction sensor has the advantages of small size, high sensitivity, good stability and dynamic response. The MEMS skin friction sensor can be integrated with other flow field sensors whose process is compatible with MEMS skin friction sensor to achieve multi-physical measurement of the flow field; and the micro-friction balance sensor array enable to achieve large area and accurate measurement for the near-wall flow. A MEMS skin friction sensor structure is proposed, which sensing element not directly contacted with the flow field. The MEMS fabrication process of the sensing element is described in detail. The thermal silicon oxide is used as the mask to solve the selection ratio problem of silicon DRIE. The optimized process parameters of silicon DRIE: etching power 1600W/LF power 100 W; SF6 flux 360 sccm; C4F8 flux 300 sccm; O2 flux 300 sccm. With Cr/Au mask, etch depth of glass shallow groove can be controlled in 30°C low concentration HF solution; the spray etch and wafer rotate improve the corrosion surface quality of glass shallow groove. The MEMS skin friction sensor samples were fabricated by the above MEMS process, and results show that the error of the length and width of the elastic cantilever is within 2 μm, the depth error of the shallow groove is less than 0.03 μm, and the static capacitance error is within 0.2 pF, which satisfy the design requirements.

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

Three-dimensional printing for restoration of the donor face: A new digital technique tested and used in the first facial allotransplantation patient in Finland.

PubMed

Mäkitie, A A; Salmi, M; Lindford, A; Tuomi, J; Lassus, P

2016-12-01

Prosthetic mask restoration of the donor face is essential in current facial transplant protocols. The aim was to develop a new three-dimensional (3D) printing (additive manufacturing; AM) process for the production of a donor face mask that fulfilled the requirements for facial restoration after facial harvest. A digital image of a single test person's face was obtained in a standardized setting and subjected to three different image processing techniques. These data were used for the 3D modeling and printing of a donor face mask. The process was also tested in a cadaver setting and ultimately used clinically in a donor patient after facial allograft harvest. and Conclusions: All the three developed and tested techniques enabled the 3D printing of a custom-made face mask in a timely manner that is almost an exact replica of the donor patient's face. This technique was successfully used in a facial allotransplantation donor patient. Copyright © 2016 British Association of Plastic, Reconstructive and Aesthetic Surgeons. Published by Elsevier Ltd. All rights reserved.

Visual masking and the dynamics of human perception, cognition, and consciousness A century of progress, a contemporary synthesis, and future directions.

PubMed

Ansorge, Ulrich; Francis, Gregory; Herzog, Michael H; Oğmen, Haluk

2008-07-15

The 1990s, the "decade of the brain," witnessed major advances in the study of visual perception, cognition, and consciousness. Impressive techniques in neurophysiology, neuroanatomy, neuropsychology, electrophysiology, psychophysics and brain-imaging were developed to address how the nervous system transforms and represents visual inputs. Many of these advances have dealt with the steady-state properties of processing. To complement this "steady-state approach," more recent research emphasized the importance of dynamic aspects of visual processing. Visual masking has been a paradigm of choice for more than a century when it comes to the study of dynamic vision. A recent workshop (http://lpsy.epfl.ch/VMworkshop/), held in Delmenhorst, Germany, brought together an international group of researchers to present state-of-the-art research on dynamic visual processing with a focus on visual masking. This special issue presents peer-reviewed contributions by the workshop participants and provides a contemporary synthesis of how visual masking can inform the dynamics of human perception, cognition, and consciousness.

Visual masking and the dynamics of human perception, cognition, and consciousness A century of progress, a contemporary synthesis, and future directions

PubMed Central

Ansorge, Ulrich; Francis, Gregory; Herzog, Michael H.; Öğmen, Haluk

2008-01-01

The 1990s, the “decade of the brain,” witnessed major advances in the study of visual perception, cognition, and consciousness. Impressive techniques in neurophysiology, neuroanatomy, neuropsychology, electrophysiology, psychophysics and brain-imaging were developed to address how the nervous system transforms and represents visual inputs. Many of these advances have dealt with the steady-state properties of processing. To complement this “steady-state approach,” more recent research emphasized the importance of dynamic aspects of visual processing. Visual masking has been a paradigm of choice for more than a century when it comes to the study of dynamic vision. A recent workshop (http://lpsy.epfl.ch/VMworkshop/), held in Delmenhorst, Germany, brought together an international group of researchers to present state-of-the-art research on dynamic visual processing with a focus on visual masking. This special issue presents peer-reviewed contributions by the workshop participants and provides a contemporary synthesis of how visual masking can inform the dynamics of human perception, cognition, and consciousness. PMID:20517493

Analysis method to determine and characterize the mask mean-to-target and uniformity specification

NASA Astrophysics Data System (ADS)

Lee, Sung-Woo; Leunissen, Leonardus H. A.; Van de Kerkhove, Jeroen; Philipsen, Vicky; Jonckheere, Rik; Lee, Suk-Joo; Woo, Sang-Gyun; Cho, Han-Ku; Moon, Joo-Tae

2006-06-01

The specification of the mask mean-to-target (MTT) and uniformity is related to functions as: mask error enhancement factor, dose sensitivity and critical dimension (CD) tolerances. The mask MTT shows a trade-off relationship with the uniformity. Simulations for the mask MTT and uniformity (M-U) are performed for LOGIC devices of 45 and 37 nm nodes according to mask type, illumination condition and illuminator polarization state. CD tolerances and after develop inspection (ADI) target CD's in the simulation are taken from the 2004 ITRS roadmap. The simulation results allow for much smaller tolerances in the uniformity and larger offsets in the MTT than the values as given in the ITRS table. Using the parameters in the ITRS table, the mask uniformity contributes to nearly 95% of total CDU budget for the 45 nm node, and is even larger than the CDU specification of the ITRS for the 37 nm node. We also compared the simulation requirements with the current mask making capabilities. The current mask manufacturing status of the mask uniformity is barely acceptable for the 45 nm node, but requires process improvements towards future nodes. In particular, for the 37 nm node, polarized illumination is necessary to meet the ITRS requirements. The current mask linearity deviates for pitches smaller than 300 nm, which is not acceptable even for the 45 nm node. More efforts on the proximity correction method are required to improve the linearity behavior.

Progress on EUV mask fabrication for 32-nm technology node and beyond

NASA Astrophysics Data System (ADS)

Zhang, Guojing; Yan, Pei-Yang; Liang, Ted; Park, Seh-jin; Sanchez, Peter; Shu, Emily Y.; Ultanir, Erdem A.; Henrichs, Sven; Stivers, Alan; Vandentop, Gilroy; Lieberman, Barry; Qu, Ping

2007-05-01

Extreme ultraviolet lithography (EUVL) tool development achieved a big milestone last year as two full-field Alpha Demo Tools (ADT) were shipped to customers by ASML. In the future horizon, a full field "EUV1" exposure tool from Nikon will be available by the end of 20071 and the pre-production EUV exposure tools from ASML are targeted for 20092. It is essential that high quality EUVL masks can be made and delivered to the EUVL tool users to support the technology development. In the past year, we have demonstrated mask fabrication with low stress absorber deposition and good etch process control yielding a vertical etch profile and a mask CD control of 5.7 nm for 32 nm (1x) space and 7.4 nm for 32 nm (1x) lines. Mask pattern resolution of 15 nm (1x) dense lines was achieved. Full field reflective mask die-to-die inspection at a 125nm pixel size was demonstrated after low defect multilayer blanks became available. In this paper, we will present details of the Intel EUVL Mask Pilot Line progress in EUVL mask defect reduction, pattern CD performance, program defect mask design and inspection, in-house absorber film development and its performance, and EUVL metrology tool development. We will demonstrate an overall improvement in EUV mask manufacturing readiness due to our Pilot Line activities.

AutoMOPS- B2B and B2C in mask making: Mask manufacturing performance and customer satisfaction improvement through better information flow management using generic models and standardized languages

NASA Astrophysics Data System (ADS)

Filies, Olaf; de Ridder, Luc; Rodriguez, Ben; Kujiken, Aart

2002-03-01

Semiconductor manufacturing has become a global business, in which companies of different size unite in virtual enterprises to meet new opportunities. Therefore Mask manufacturing is a key business, but mask ordering is a complex process and is always critical regarding design to market time, even though mask complexity and customer base are increasing using a wide variety of different mask order forms which are frequently faulty and very seldom complete. This is effectively blocking agile manufacturing and can tie wafer fabs to a single mask The goal of the project is elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and production stages, which will allow automation of the mask preparation. To cover these new techniques and their specifications as well as the common ones with automated tools a special generic Meta-model will be generated, based on the current standards for mask specifications, including the requirements from the involved partners (Alcatel Microelectronics, Altis, Compugraphics, Infineon, Nimble, Sigma-C), the project works out a pre-normative standard. The paper presents the current status of work. This work is partly funded by the Commission of the European Union under the Fifth Framework project IST-1999-10332 AutoMOPS.

Spatial Attention Enhances Perceptual Processing of Single-Element Displays

NASA Technical Reports Server (NTRS)

Bacon, William; Johnston, James C.; Remington, Roger W.; Null, Cynthia H. (Technical Monitor)

1994-01-01

Shiu and Pashler (1993) reported that precueing masked, single-element displays had negligible effects on identification accuracy. They argued that spatial attention does not actually enhance stimulus perceptibility, but only reduces decision noise. Alternatively, such negative results may arise if cues are sub-optimal, or if masks place an insufficient premium on timely deployment of attention. We report results showing that valid cueing enhances processing of even single-element displays. Spatial attention does indeed enhance perceptual processes.

FPGA Control System for the Automated Test of Microshutters

NASA Technical Reports Server (NTRS)

Lyness, Eric; Rapchun, David A.; Moseley, S. Harvey

2008-01-01

The James Webb Space Telescope, scheduled to replace the Hubble in 2013, must simultaneously observe hundreds of faint galaxies. This requirement has led to the development of a programmable transmission mask which can be adapted to admit light with arbitrary pattern of galaxies into its spectrograph. This programmable mask will contain a large array of micro-electromechanical (MEMs) devices called MicroShutters. These microscopic shutters physically open and close like the shutter on a camera, except each shutter is microscopic in size and an array 365 by 171 is used to select the objects under spectroscopic observation at a given time, and to block the unwanted background light from other areas. NASA developed and is currently refining the exceptionally difficult process of manufacturing these shutters. This paper describes how the authors used LabVIEW FPGA and a reconfigurable I/O board to control the shutters in a test chamber and how the flexibility of the system allows us to continue to modify the control algorithms as NASA optimizes the performance of the MicroShutter arrays.

FPGA Control System for the Automated Test of MicroShutters

NASA Technical Reports Server (NTRS)

Lyness, Eric; Rapchun, David A.; Moseley, S. Harvey

2008-01-01

The James Webb Space Telescope, scheduled to replace the Hubble in 2013, must simultaneously observe hundreds of faint galaxies. This requirement has led to the development of a programmable transmission mask which can be adapted to admit light from an arbitrary pattern of galaxies into its spectrograph. This programmable mask will contain a large array of micro-electromechanical (MEMs) devices called MicroShutters. These microscopic shutters physically open and close like the shutter on a camera, except each shutter is microscopic in size and an array 365 by 171 is used to select the objects under spectroscopic observation at a given time, and to block the unwanted background light from other areas. NASA developed and is currently refining the exceptionally difficult process of manufacturing these shutters. This paper describes how the authors used LabVIEW FPGA and a reconfigurable I/O board to control the shutters in a test chamber and how the flexibility of the system allows us to continue to modify the control algorithms as NASA optimizes the performance of the MicroShutter arrays.

A methodology for cloud masking uncalibrated lidar signals

NASA Astrophysics Data System (ADS)

Binietoglou, Ioannis; D'Amico, Giuseppe; Baars, Holger; Belegante, Livio; Marinou, Eleni

2018-04-01

Most lidar processing algorithms, such as those included in EARLINET's Single Calculus Chain, can be applied only to cloud-free atmospheric scenes. In this paper, we present a methodology for masking clouds in uncalibrated lidar signals. First, we construct a reference dataset based on manual inspection and then train a classifier to separate clouds and cloud-free regions. Here we present details of this approach together with an example cloud masks from an EARLINET station.

Disposable surgical face masks for preventing surgical wound infection in clean surgery.

PubMed

Lipp, Allyson; Edwards, Peggy

2014-02-17

Surgical face masks were originally developed to contain and filter droplets containing microorganisms expelled from the mouth and nasopharynx of healthcare workers during surgery, thereby providing protection for the patient. However, there are several ways in which surgical face masks could potentially contribute to contamination of the surgical wound, e.g. by incorrect wear or by leaking air from the side of the mask due to poor string tension. To determine whether disposable surgical face masks worn by the surgical team during clean surgery prevent postoperative surgical wound infection. We searched The Cochrane Wounds Group Specialised Register on 23 October 2013; The Cochrane Central Register of Controlled Trials (CENTRAL) (The Cochrane Library); Ovid MEDLINE; Ovid MEDLINE (In-Process & Other Non-Indexed Citations); Ovid EMBASE; and EBSCO CINAHL. Randomised controlled trials (RCTs) and quasi-randomised controlled trials comparing the use of disposable surgical masks with the use of no mask. Two review authors extracted data independently. Three trials were included, involving a total of 2113 participants. There was no statistically significant difference in infection rates between the masked and unmasked group in any of the trials. From the limited results it is unclear whether the wearing of surgical face masks by members of the surgical team has any impact on surgical wound infection rates for patients undergoing clean surgery.

Mask industry assessment trend analysis

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2009-01-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the seventh in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2007. Questions are grouped into seven categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns, and Services. (Examples are given below). Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

Mask industry assessment: 2009

NASA Astrophysics Data System (ADS)

Hughes, Greg; Yun, Henry

2009-10-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the eighth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2008 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. This in combination with the past surveys represents a comprehensive view of changes in the industry.

Development of an Operational Land Water Mask for MODIS Collection 6, and Influence on Downstream Data Products

NASA Technical Reports Server (NTRS)

Carroll, M. L.; DiMiceli, C. M.; Townshend, J. R. G.; Sohlberg, R. A.; Elders, A. I.; Devadiga, S.; Sayer, A. M.; Levy, R. C.

2016-01-01

Data from the Moderate Resolution Imaging Spectro-radiometer (MODIS)on-board the Earth Observing System Terra and Aqua satellites are processed using a land water mask to determine when an algorithm no longer needs to be run or when an algorithm needs to follow a different pathway. Entering the fourth reprocessing (Collection 6 (C6)) the MODIS team replaced the 1 km water mask with a 500 m water mask for improved representation of the continental surfaces. The new water mask represents more small water bodies for an overall increase in water surface from 1 to 2 of the continental surface. While this is still a small fraction of the overall global surface area the increase is more dramatic in certain areas such as the Arctic and Boreal regions where there are dramatic increases in water surface area in the new mask. MODIS products generated by the on-going C6 reprocessing using the new land water mask show significant impact in areas with high concentrations of change in the land water mask. Here differences between the Collection 5 (C5) and C6 water masks and the impact of these differences on the MOD04 aerosol product and the MOD11 land surface temperature product are shown.

Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

NASA Astrophysics Data System (ADS)

Mehta, Sohan S.; Ganta, Lakshmi K.; Chauhan, Vikrant; Wu, Yixu; Singh, Sunil; Ann, Chia; Subramany, Lokesh; Higgins, Craig; Erenturk, Burcin; Srivastava, Ravi; Singh, Paramjit; Koh, Hui Peng; Cho, David

2015-03-01

Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning. The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and color balanced layouts.

A schlieren optical study of the human cough with and without wearing masks for aerosol infection control

PubMed Central

Tang, Julian W.; Liebner, Thomas J.; Craven, Brent A.; Settles, Gary S.

2009-01-01

Various infectious agents are known to be transmitted naturally via respiratory aerosols produced by infected patients. Such aerosols may be produced during normal activities by breathing, talking, coughing and sneezing. The schlieren optical method, previously applied mostly in engineering and physics, can be effectively used here to visualize airflows around human subjects in such indoor situations, non-intrusively and without the need for either tracer gas or airborne particles. It accomplishes this by rendering visible the optical phase gradients owing to real-time changes in air temperature. In this study, schlieren video records are obtained of human volunteers coughing with and without wearing standard surgical and N95 masks. The object is to characterize the exhaled airflows and evaluate the effect of these commonly used masks on the fluid-dynamic mechanisms that spread infection by coughing. Further, a high-speed schlieren video of a single cough is analysed by a computerized method of tracking individual turbulent eddies, demonstrating the non-intrusive velocimetry of the expelled airflow. Results show that human coughing projects a rapid turbulent jet into the surrounding air, but that wearing a surgical or N95 mask thwarts this natural mechanism of transmitting airborne infection, either by blocking the formation of the jet (N95 mask), or by redirecting it in a less harmful direction (surgical mask). PMID:19815575

A schlieren optical study of the human cough with and without wearing masks for aerosol infection control.

PubMed

Tang, Julian W; Liebner, Thomas J; Craven, Brent A; Settles, Gary S

2009-12-06

Various infectious agents are known to be transmitted naturally via respiratory aerosols produced by infected patients. Such aerosols may be produced during normal activities by breathing, talking, coughing and sneezing. The schlieren optical method, previously applied mostly in engineering and physics, can be effectively used here to visualize airflows around human subjects in such indoor situations, non-intrusively and without the need for either tracer gas or airborne particles. It accomplishes this by rendering visible the optical phase gradients owing to real-time changes in air temperature. In this study, schlieren video records are obtained of human volunteers coughing with and without wearing standard surgical and N95 masks. The object is to characterize the exhaled airflows and evaluate the effect of these commonly used masks on the fluid-dynamic mechanisms that spread infection by coughing. Further, a high-speed schlieren video of a single cough is analysed by a computerized method of tracking individual turbulent eddies, demonstrating the non-intrusive velocimetry of the expelled airflow. Results show that human coughing projects a rapid turbulent jet into the surrounding air, but that wearing a surgical or N95 mask thwarts this natural mechanism of transmitting airborne infection, either by blocking the formation of the jet (N95 mask), or by redirecting it in a less harmful direction (surgical mask).

Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

NASA Astrophysics Data System (ADS)

Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

2006-01-01

In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

Registration performance on EUV masks using high-resolution registration metrology

NASA Astrophysics Data System (ADS)

Steinert, Steffen; Solowan, Hans-Michael; Park, Jinback; Han, Hakseung; Beyer, Dirk; Scherübl, Thomas

2016-10-01

Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to the increasing complexity at smaller nodes a multitude of different masks, both DUV (193 nm) and EUV (13.5 nm) reticles, will then be required in the lithography process-flow. The individual registration of each mask and the resulting overlay error are of crucial importance in order to ensure proper functionality of the chips. While registration and overlay metrology on DUV masks has been the standard for decades, this has yet to be demonstrated on EUV masks. Past generations of mask registration tools were not necessarily limited in their tool stability, but in their resolution capabilities. The scope of this work is an image placement investigation of high-end EUV masks together with a registration and resolution performance qualification. For this we employ a new generation registration metrology system embedded in a production environment for full-spec EUV masks. This paper presents excellent registration performance not only on standard overlay markers but also on more sophisticated e-beam calibration patterns.

The benefits of sensorimotor knowledge: body-object interaction facilitates semantic processing.

PubMed

Siakaluk, Paul D; Pexman, Penny M; Sears, Christopher R; Wilson, Kim; Locheed, Keri; Owen, William J

2008-04-05

This article examined the effects of body-object interaction (BOI) on semantic processing. BOI measures perceptions of the ease with which a human body can physically interact with a word's referent. In Experiment 1, BOI effects were examined in 2 semantic categorization tasks (SCT) in which participants decided if words are easily imageable. Responses were faster and more accurate for high BOI words (e.g., mask) than for low BOI words (e.g., ship). In Experiment 2, BOI effects were examined in a semantic lexical decision task (SLDT), which taps both semantic feedback and semantic processing. The BOI effect was larger in the SLDT than in the SCT, suggesting that BOI facilitates both semantic feedback and semantic processing. The findings are consistent with the embodied cognition perspective (e.g., Barsalou's, 1999, Perceptual Symbols Theory), which proposes that sensorimotor interactions with the environment are incorporated in semantic knowledge. 2008 Cognitive Science Society, Inc.

Vortex via process: analysis and mask fabrication for contact CDs <80 nm

NASA Astrophysics Data System (ADS)

Levenson, Marc D.; Tan, Sze M.; Dai, Grace; Morikawa, Yasutaka; Hayashi, Naoya; Ebihara, Takeaki

2003-06-01

In an optical vortex, the wavefront spirals like a corkscrew, rather than forming planes or spheres. Since any nonzero optical amplitude must have a well-defined phase, the axis of a vortex is always dark. Printed in negative resist at 248nm and NA=0.63, 250nm pitch vortex arrays would produce contact holes with 80nm0.6 can be patterned using a chromeless phase-edge mask composed of rectangles with nominal phases of 0°, 90°, 180° and 270°. Analytic and numerical calculations have been performed to characterize the aerial images projected from such vortex masks using the Kirchhoff-approximation and rigorous EMF methods. Combined with resist simulations, these analyses predict process windows with ~10%Elat and >200nm DOF for 80nm CDs on pitches greater than or equal to 250nm at σ greater than or equal to 0.15. Smaller CDs and pitches are possible with shorter wavelength and larger NA while larger pitches give rise to larger CDs. At pitch >0.8μm, the vortices begin to print independently for σ greater than or equal to 0.3. Such "independent" vortices have a quasi-isofocal dose that gives rise to 100nm contacts with Elat>9% and DOF>500nm at σ=0.3. The extra darkness of the nominal 270° phase step can be accommodated by fine-tuning the etch depth. A reticle fabrication process that achieves the required alignment and vertical wall profiles has been exercised and test masks analyzed. In an actual chip design, unwanted vortices and phase step images would be erased from the resist pattern by exposing the wafer with a second, more conventional trim mask. Vortex via placement is consistent with the coarse-gridded grating design paradigms which would - if widely exercised - lower the cost of the required reticles. Compared to other ways of producing deep sub-wavelength contacts, the vortex via process requires fewer masks and reduces the overlay and process control challenges. A high resolution negative-working resist process is essential, however.

Effects of masker frequency and duration in forward masking: further evidence for the influence of peripheral nonlinearity.

PubMed

Oxenham, A J; Plack, C J

2000-12-01

Forward masking has often been thought of in terms of neural adaptation, with nonlinearities in the growth and decay of forward masking being accounted for by the nonlinearities inherent in adaptation. In contrast, this study presents further evidence for the hypothesis that forward masking can be described as a linear process, once peripheral, mechanical nonlinearities are taken into account. The first experiment compares the growth of masking for on- and off-frequency maskers. Signal thresholds were measured as a function of masker level for three masker-signal intervals of 0, 10, and 30 ms. The brief 4-kHz sinusoidal signal was masked by a 200-ms sinusoidal forward masker which had a frequency of either 2.4 kHz (off-frequency) or 4 kHz (on-frequency). As in previous studies, for the on-frequency condition, the slope of the function relating signal threshold to masker level became shallower as the delay between the masker and signal was increased. In contrast, the slopes for the off-frequency condition were independent of masker-signal delay and had a value of around unity, indicating linear growth of masking for all masker-signal delays. In the second experiment, a broadband Gaussian noise forward masker was used to mask a brief 6-kHz sinusoidal signal. The spectrum level of the masker was either 0 or 40 dB (re: 20 microPa). The gap between the masker and signal was either 0 or 20 ms. Signal thresholds were measured for masker durations from 5 to 200 ms. The effect of masker duration was found to depend more on signal level than on gap duration or masker level. Overall, the results support the idea that forward masking can be modeled as a linear process, preceded by a static nonlinearity resembling that found on the basilar membrane.

Hormonal regulators of muscle and metabolism in aging (HORMA): Design and conduct of a complex, double-masked, multicenter trial

USDA-ARS?s Scientific Manuscript database

BACKGROUND: Older persons often lose muscle mass, strength, and physical function. This report describes the challenges of conducting a complex clinical investigation assessing the effects of anabolic hormones on body composition, physical function, and metabolism during aging. METHODS: HORMA is a m...

Masking technique for coating thickness control on large and strongly curved aspherical optics.

PubMed

Sassolas, B; Flaminio, R; Franc, J; Michel, C; Montorio, J-L; Morgado, N; Pinard, L

2009-07-01

We discuss a method to control the coating thickness deposited onto large and strongly curved optics by ion beam sputtering. The technique uses an original design of the mask used to screen part of the sputtered materials. A first multielement mask is calculated from the measured two-dimensional coating thickness distribution. Then, by means of an iterative process, the final mask is designed. By using such a technique, it has been possible to deposit layers of tantalum pentoxide having a high thickness gradient onto a curved substrate 500 mm in diameter. Residual errors in the coating thickness profile are below 0.7%.

Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2013-04-01

As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of the overall EUV CDU contribution helps deliver an accurate and integral CDU BB per product/process and litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Psychophysical "blinding" methods reveal a functional hierarchy of unconscious visual processing.

PubMed

Breitmeyer, Bruno G

2015-09-01

Numerous non-invasive experimental "blinding" methods exist for suppressing the phenomenal awareness of visual stimuli. Not all of these suppressive methods occur at, and thus index, the same level of unconscious visual processing. This suggests that a functional hierarchy of unconscious visual processing can in principle be established. The empirical results of extant studies that have used a number of different methods and additional reasonable theoretical considerations suggest the following tentative hierarchy. At the highest levels in this hierarchy is unconscious processing indexed by object-substitution masking. The functional levels indexed by crowding, the attentional blink (and other attentional blinding methods), backward pattern masking, metacontrast masking, continuous flash suppression, sandwich masking, and single-flash interocular suppression, fall at progressively lower levels, while unconscious processing at the lowest levels is indexed by eye-based binocular-rivalry suppression. Although unconscious processing levels indexed by additional blinding methods is yet to be determined, a tentative placement at lower levels in the hierarchy is also given for unconscious processing indexed by Troxler fading and adaptation-induced blindness, and at higher levels in the hierarchy indexed by attentional blinding effects in addition to the level indexed by the attentional blink. The full mapping of levels in the functional hierarchy onto cortical activation sites and levels is yet to be determined. The existence of such a hierarchy bears importantly on the search for, and the distinctions between, neural correlates of conscious and unconscious vision. Copyright © 2015 Elsevier Inc. All rights reserved.

Method of fabricating a 3-dimensional tool master

DOEpatents

Bonivert, William D.; Hachman, John T.

2002-01-01

The invention is a method for the fabrication of an imprint tool master. The process begins with a metallic substrate. A layer of photoresist is placed onto the metallic substrate and a image pattern mask is then aligned to the mask. The mask pattern has opaque portions that block exposure light and "open" or transparent portions which transmit exposure light. The photoresist layer is then exposed to light transmitted through the "open" portions of the first image pattern mask and the mask is then removed. A second layer of photoresist then can be placed onto the first photoresist layer and a second image pattern mask may be placed on the second layer of photoresist. The second layer of photoresist is exposed to light, as before, and the second mask removed. The photoresist layers are developed simultaneously to produce a multi-level master mandrel upon which a conductive film is formed. A tool master can now be formed onto the conductive film. An imprint tool is then produced from the tool master. In one embodiment, nickel is electroplated onto the tool master to produce a three-dimensional imprint tool.

Selective Plasma Deposition of Fluorocarbon Films on SAMs

NASA Technical Reports Server (NTRS)

Crain, Mark M., III; Walsh, Kevin M.; Cohn, Robert W.

2006-01-01

A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

The Attentional Blink Is Not Affected by Backward Masking of T2, T2-Mask SOA, or Level of T2 Impoverishment

ERIC Educational Resources Information Center

Jannati, Ali; Spalek, Thomas M.; Lagroix, Hayley E. P.; Di Lollo, Vincent

2012-01-01

Identification of the second of two targets (T2) is impaired when presented shortly after the first (T1). This "attentional blink" (AB) is thought to arise from a delay in T2 processing during which T2 is vulnerable to masking. Conventional studies have measured T2 accuracy which is constrained by the 100% ceiling. We avoided this problem by using…

Probing feedforward and feedback contributions to awareness with visual masking and transcranial magnetic stimulation

PubMed Central

Tapia, Evelina; Beck, Diane M.

2014-01-01

A number of influential theories posit that visual awareness relies not only on the initial, stimulus-driven (i.e., feedforward) sweep of activation but also on recurrent feedback activity within and between brain regions. These theories of awareness draw heavily on data from masking paradigms in which visibility of one stimulus is reduced due to the presence of another stimulus. More recently transcranial magnetic stimulation (TMS) has been used to study the temporal dynamics of visual awareness. TMS over occipital cortex affects performance on visual tasks at distinct time points and in a manner that is comparable to visual masking. We draw parallels between these two methods and examine evidence for the neural mechanisms by which visual masking and TMS suppress stimulus visibility. Specifically, both methods have been proposed to affect feedforward as well as feedback signals when applied at distinct time windows relative to stimulus onset and as a result modify visual awareness. Most recent empirical evidence, moreover, suggests that while visual masking and TMS impact stimulus visibility comparably, the processes these methods affect may not be as similar as previously thought. In addition to reviewing both masking and TMS studies that examine feedforward and feedback processes in vision, we raise questions to guide future studies and further probe the necessary conditions for visual awareness. PMID:25374548

Wildfires: Information for Parents

MedlinePlus

... cleaner air, rather than give them a mask. Outdoor activity should be minimized, and athletic and physical ... be unstable and fall Roadways, bridges, and other outdoor structures that may be damaged and unstable Animals ...

Plasma-Induced, Self-Masking, One-Step Approach to an Ultrabroadband Antireflective and Superhydrophilic Subwavelength Nanostructured Fused Silica Surface.

PubMed

Ye, Xin; Shao, Ting; Sun, Laixi; Wu, Jingjun; Wang, Fengrui; He, Junhui; Jiang, Xiaodong; Wu, Wei-Dong; Zheng, Wanguo

2018-04-25

In this work, antireflective and superhydrophilic subwavelength nanostructured fused silica surfaces have been created by one-step, self-masking reactive ion etching (RIE). Bare fused silica substrates with no mask were placed in a RIE vacuum chamber, and then nanoscale fluorocarbon masks and subwavelength nanostructures (SWSs) automatically formed on these substrate after the appropriate RIE plasma process. The mechanism of plasma-induced self-masking SWS has been proposed in this paper. Plasma parameter effects on the morphology of SWS have been investigated to achieve perfect nanocone-like SWS for excellent antireflection, including process time, reactive gas, and pressure of the chamber. Optical properties, i.e., antireflection and optical scattering, were simulated by the finite difference time domain (FDTD) method. Calculated data agree well with the experiment results. The optimized SWS show ultrabroadband antireflective property (up to 99% from 500 to 1360 nm). An excellent improvement of transmission was achieved for the deep-ultraviolet (DUV) range. The proposed low-cost, highly efficient, and maskless method was applied to achieve ultrabroadband antireflective and superhydrophilic SWSs on a 100 mm optical window, which promises great potential for applications in the automotive industry, goggles, and optical devices.

Phase-shifting coronagraph

NASA Astrophysics Data System (ADS)

Hénault, François; Carlotti, Alexis; Vérinaud, Christophe

2017-09-01

With the recent commissioning of ground instruments such as SPHERE or GPI and future space observatories like WFIRST-AFTA, coronagraphy should probably become the most efficient tool for identifying and characterizing extrasolar planets in the forthcoming years. Coronagraphic instruments such as Phase mask coronagraphs (PMC) are usually based on a phase mask or plate located at the telescope focal plane, spreading the starlight outside the diameter of a Lyot stop that blocks it. In this communication is investigated the capability of a PMC to act as a phase-shifting wavefront sensor for better control of the achieved star extinction ratio in presence of the coronagraphic mask. We discuss the two main implementations of the phase-shifting process, either introducing phase-shifts in a pupil plane and sensing intensity variations in an image plane, or reciprocally. Conceptual optical designs are described in both cases. Numerical simulations allow for better understanding of the performance and limitations of both options, and optimizing their fundamental parameters. In particular, they demonstrate that the phase-shifting process is a bit more efficient when implemented into an image plane, and is compatible with the most popular phase masks currently employed, i.e. fourquadrants and vortex phase masks.

Abnormal auditory forward masking pattern in the brainstem response of individuals with Asperger syndrome

PubMed Central

Källstrand, Johan; Olsson, Olle; Nehlstedt, Sara Fristedt; Sköld, Mia Ling; Nielzén, Sören

2010-01-01

Abnormal auditory information processing has been reported in individuals with autism spectrum disorders (ASD). In the present study auditory processing was investigated by recording auditory brainstem responses (ABRs) elicited by forward masking in adults diagnosed with Asperger syndrome (AS). Sixteen AS subjects were included in the forward masking experiment and compared to three control groups consisting of healthy individuals (n = 16), schizophrenic patients (n = 16) and attention deficit hyperactivity disorder patients (n = 16), respectively, of matching age and gender. The results showed that the AS subjects exhibited abnormally low activity in the early part of their ABRs that distinctly separated them from the three control groups. Specifically, wave III amplitudes were significantly lower in the AS group than for all the control groups in the forward masking condition (P < 0.005), which was not the case in the baseline condition. Thus, electrophysiological measurements of ABRs to complex sound stimuli (eg, forward masking) may lead to a better understanding of the underlying neurophysiology of AS. Future studies may further point to specific ABR characteristics in AS individuals that separate them from individuals diagnosed with other neurodevelopmental diseases. PMID:20628629

Forward Masking of the Speech-Evoked Auditory Brainstem Response.

PubMed

Hodge, Sarah E; Menezes, Denise C; Brown, Kevin D; Grose, John H

2018-02-01

The hypothesis tested was that forward masking of the speech-evoked auditory brainstem response (sABR) increases peak latency as an inverse function of masker-signal interval (Δt), and that the overall persistence of forward masking is age dependent. Older listeners exhibit deficits in forward masking. If forward-masked sABRs provide an objective measure of the susceptibility of speech sounds to prior stimulation, then this provides a novel approach to examining the age dependence of temporal processing. A /da/ stimulus forward masked by speech-shaped noise (Δt = 4-64 ms) was used to measure sABRs in 10 younger and nine older participants. Forward masking of subsegments of the /da/ stimulus (Δt = 16 ms) and click trains (Δt = 0-64 ms) was also measured. Forward-masked sABRs from young participants showed an increase in latency with decreasing Δt for the initial peak. Latency shifts for later peaks were smaller and more uniform. None of the peak latencies returned to baseline by Δt = 64 ms. Forward-masked /da/ subsegments showed peak latency shifts that did not depend simply on peak position, while forward-masked click trains showed latency shifts that were dependent on click position. The sABRs from older adults were less robust but confirmed the viability of the approach. Forward masking of the sABR provides an objective measure of the susceptibility of the auditory system to prior stimulation. Failure of recovery functions to return to baseline suggests an interaction between forward masking by the prior masker and temporal effects within the stimulus itself.

Monte Carlo sensitivity analysis of EUV mask reflectivity and its impact on OPC accuracy

NASA Astrophysics Data System (ADS)

Chen, Yulu; Wood, Obert; Rankin, Jed; Gullikson, Eric; Meyer-Ilse, Julia; Sun, Lei; Qi, Zhengqing John; Goodwin, Francis; Kye, Jongwook

2017-03-01

Unlike optical masks which are transmissive optical elements, use of extreme ultraviolet (EUV) radiation requires a reflective mask structure - a multi-layer coating consisting of alternating layers of high-Z (wave impedance) and low-Z materials that provide enhanced reflectivity over a narrow wavelength band peaked at the Bragg wavelength.1 Absorber side wall angle, corner rounding,2 surface roughness,3 and defects4 affect mask performance, but even seemingly simple parameters like bulk reflectivity on mirror and absorber surfaces can have a profound influence on imaging. For instance, using inaccurate reflectivity values at small and large incident angles would diminish the benefits of source mask co-optimization (SMO) and result in larger than expected pattern shifts. The goal of our work is to calculate the variation in mask reflectivity due to various sources of inaccuracies using Monte Carlo simulations. Such calculation is necessary as small changes in the thickness and optical properties of the high-Z and low-Z materials can cause substantial variations in reflectivity. This is further complicated by undesirable intermixing between the two materials used to create the reflector.5 One of the key contributors to mask reflectivity fluctuation is identified to be the intermixing layer thickness. We also investigate the impacts on OPC when the wrong mask information is provided, and evaluate the deterioration of overlapping process window. For a hypothetical N7 via layer, the lack of accurate mask information costs 25% of the depth of focus at 5% exposure latitude. Our work would allow the determination of major contributors to mask reflectivity variation, drive experimental efforts of measuring such contributors, provide strategies to optimize mask reflectivity, and quantize the OPC errors due to imperfect mask modeling.

Objective evaluation of the knocking sound of a diesel engine considering the temporal and frequency masking effect simultaneously

NASA Astrophysics Data System (ADS)

Yun, Dong-Un; Lee, Sang-Kwon

2017-06-01

In this paper, we present a novel method for an objective evaluation of knocking noise emitted by diesel engines based on the temporal and frequency masking theory. The knocking sound of a diesel engine is a vibro-acoustic sound correlated with the high-frequency resonances of the engine structure and a periodic impulsive sound with amplitude modulation. Its period is related to the engine speed and includes specific frequency bands related to the resonances of the engine structure. A knocking sound with the characteristics of a high-frequency impulsive wave can be masked by low-frequency sounds correlated with the harmonics of the firing frequency and broadband noise. The degree of modulation of the knocking sound signal was used for such objective evaluations in previous studies, without considering the masking effect. However, the frequency masking effect must be considered for the objective evaluation of the knocking sound. In addition to the frequency masking effect, the temporal masking effect occurs because the period of the knocking sound changes according to the engine speed. Therefore, an evaluation method considering the temporal and frequency masking effect is required to analyze the knocking sound objectively. In this study, an objective evaluation method considering the masking effect was developed based on the masking theory of sound and signal processing techniques. The method was applied successfully for the objective evaluation of the knocking sound of a diesel engine.

Masked multichannel analyzer

DOEpatents

Winiecki, A.L.; Kroop, D.C.; McGee, M.K.; Lenkszus, F.R.

1984-01-01

An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

Masked multichannel analyzer

DOEpatents

Winiecki, Alan L.; Kroop, David C.; McGee, Marilyn K.; Lenkszus, Frank R.

1986-01-01

An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

Prewarping techniques in imaging: applications in nanotechnology and biotechnology

NASA Astrophysics Data System (ADS)

Poonawala, Amyn; Milanfar, Peyman

2005-03-01

In all imaging systems, the underlying process introduces undesirable distortions that cause the output signal to be a warped version of the input. When the input to such systems can be controlled, pre-warping techniques can be employed which consist of systematically modifying the input such that it cancels out (or compensates for) the process losses. In this paper, we focus on the mask (reticle) design problem for 'optical micro-lithography', a process similar to photographic printing used for transferring binary circuit patterns onto silicon wafers. We use a pixel-based mask representation and model the above process as a cascade of convolution (aerial image formation) and thresholding (high-contrast recording) operations. The pre-distorted mask is obtained by minimizing the norm of the difference between the 'desired' output image and the 'reproduced' output image. We employ the regularization framework to ensure that the resulting masks are close-to-binary as well as simple and easy to fabricate. Finally, we provide insight into two additional applications of pre-warping techniques. First is 'e-beam lithography', used for fabricating nano-scale structures, and second is 'electronic visual prosthesis' which aims at providing limited vision to the blind by using a prosthetic retinally implanted chip capable of electrically stimulating the retinal neuron cells.

Using the Leitz LMS 2000 for monitoring and improvement of an e-beam

NASA Astrophysics Data System (ADS)

Blaesing-Bangert, Carola; Roeth, Klaus-Dieter; Ogawa, Yoichi

1994-11-01

Kaizen--a continuously improving--is a philosophy lived in Japan which is also becoming more and more important in Western companies. To implement this philosophy in the semiconductor industry, a high performance metrology tool is essential to determine the status of production quality periodically. An important prerequisite for statistical process control is the high stability of the metrology tool over several months or years; the tool-induced shift should be as small as possible. The pattern placement metrology tool Leitz LMS 2000 has been used in a major European mask house for several years now to qualify masks within the tightest specifications and to monitor the MEBES III and its cassettes. The mask shop's internal specification for the long term repeatability of the pattern placement metrology tool is 19 nm instead of 42 nm as specified by the supplier of the tool. Then the process capability of the LMS 2000 over 18 months is represented by an average cpk value of 2.8 for orthogonality, 5.2 for x-scaling, and 3.0 for y-scaling. The process capability of the MEBES III and its cassettes was improved in the past years. For instance, 100% of the masks produced with a process tolerance of +/- 200 nm are now within this limit.

An economic analysis for optimal distributed computing resources for mask synthesis and tape-out in production environment

NASA Astrophysics Data System (ADS)

Cork, Chris; Lugg, Robert; Chacko, Manoj; Levi, Shimon

2005-06-01

With the exponential increase in output database size due to the aggressive optical proximity correction (OPC) and resolution enhancement technique (RET) required for deep sub-wavelength process nodes, the CPU time required for mask tape-out continues to increase significantly. For integrated device manufacturers (IDMs), this can impact the time-to-market for their products where even a few days delay could have a huge commercial impact and loss of market window opportunity. For foundries, a shorter turnaround time provides a competitive advantage in their demanding market, too slow could mean customers looking elsewhere for these services; while a fast turnaround may even command a higher price. With FAB turnaround of a mature, plain-vanilla CMOS process of around 20-30 days, a delay of several days in mask tapeout would contribute a significant fraction to the total time to deliver prototypes. Unlike silicon processing, masks tape-out time can be decreased by simply purchasing extra computing resources and software licenses. Mask tape-out groups are taking advantage of the ever-decreasing hardware cost and increasing power of commodity processors. The significant distributability inherent in some commercial Mask Synthesis software can be leveraged to address this critical business issue. Different implementations have different fractions of the code that cannot be parallelized and this affects the efficiency with which it scales, as is described by Amdahl"s law. Very few are efficient enough to allow the effective use of 1000"s of processors, enabling run times to drop from days to only minutes. What follows is a cost aware methodology to quantify the scalability of this class of software, and thus act as a guide to estimating the optimal investment in terms of hardware and software licenses.

Less is more: Neural activity during very brief and clearly visible exposure to phobic stimuli.

PubMed

Siegel, Paul; Warren, Richard; Wang, Zhishun; Yang, Jie; Cohen, Don; Anderson, Jason F; Murray, Lilly; Peterson, Bradley S

2017-05-01

Research on automatic processes in fear has emphasized the provocation of fear responses rather than their attenuation. We have previously shown that the repeated presentation of feared images without conscious awareness via backward masking reduces avoidance of a live tarantula in spider-phobic participants. Herein we investigated the neural basis for these adaptive effects of masked exposure. 21 spider-phobic and 21 control participants, identified by a psychiatric interview, fear questionnaire, and approaching a live tarantula, viewed stimuli in each of three conditions: (1) very brief exposure (VBE) to masked images of spiders, severely limited awareness; (2) clearly visible exposure (CVE) to spiders, full awareness; and (3) masked images of flowers (control), severely limited awareness. Only VBE to masked spiders generated neural activity more strongly in phobic than in control participants, within subcortical fear, attention, higher-order language, and vision systems. Moreover, VBE activated regions that support fear processing in phobic participants without causing them to experience fear consciously. Counter-intuitively, CVE to the same spiders generated stronger neural activity in control rather than phobic participants within these and other systems. CVE deactivated regions supporting fear regulation and caused phobic participants to experience fear. CVE-induced activations also correlated with measures of explicit fear ratings, whereas VBE-induced activations correlated with measures of implicit fear (color-naming interference of spider words). These multiple dissociations between the effects of VBE and CVE to spiders suggest that limiting awareness of exposure to phobic stimuli through visual masking paradoxically facilitates their processing, while simultaneously minimizing the experience of fear. Hum Brain Mapp 38:2466-2481, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Optical performances of the FM JEM-X masks

NASA Astrophysics Data System (ADS)

Reglero, V.; Rodrigo, J.; Velasco, T.; Gasent, J. L.; Chato, R.; Alamo, J.; Suso, J.; Blay, P.; Martínez, S.; Doñate, M.; Reina, M.; Sabau, D.; Ruiz-Urien, I.; Santos, I.; Zarauz, J.; Vázquez, J.

2001-09-01

The JEM-X Signal Multiplexing Systems are large HURA codes "written" in a pure tungsten plate 0.5 mm thick. 24.247 hexagonal pixels (25% open) are spread over a total area of 535 mm diameter. The tungsten plate is embedded in a mechanical structure formed by a Ti ring, a pretensioning system (Cu-Be) and an exoskeleton structure that provides the required stiffness. The JEM-X masks differ from the SPI and IBIS masks on the absence of a code support structure covering the mask assembly. Open pixels are fully transparent to X-rays. The scope of this paper is to report the optical performances of the FM JEM-X masks defined by uncertainties on the pixel location (centroid) and size coming from the manufacturing and assembly processes. Stability of the code elements under thermoelastic deformations is also discussed. As a general statement, JEM-X Mask optical properties are nearly one order of magnitude better than specified in 1994 during the ESA instrument selection.

Uniformity Masks Design Method Based on the Shadow Matrix for Coating Materials with Different Condensation Characteristics

PubMed Central

2013-01-01

An intuitionistic method is proposed to design shadow masks to achieve thickness profile control for evaporation coating processes. The proposed method is based on the concept of the shadow matrix, which is a matrix that contains coefficients that build quantitive relations between shape parameters of masks and shadow quantities of substrate directly. By using the shadow matrix, shape parameters of shadow masks could be derived simply by solving a matrix equation. Verification experiments were performed on a special case where coating materials have different condensation characteristics. By using the designed mask pair with complementary shapes, thickness uniformities of better than 98% are demonstrated for MgF2 (m = 1) and LaF3 (m = 0.5) simultaneously on a 280 mm diameter spherical substrate with the radius curvature of 200 mm. PMID:24227996

Panel discussion summary: do we need a revolution in design and process integration to enable sub-100-nm technology nodes?

NASA Astrophysics Data System (ADS)

Grobman, Warren D.

2002-07-01

Dramatically increasing mask set costs, long-loop design-fabrication iterations, and lithography of unprecedented complexity and cost threaten to disrupt time-accepted IC industry progression as described by Moore"s Law. Practical and cost-effective IC manufacturing below the 100nm technology node presents significant and unique new challenges spanning multiple disciplines and overlapping traditionally separable components of the design-through-chip manufacturing flow. Lithographic and other process complexity is compounded by design, mask, and infrastructure technologies, which do not sufficiently account for increasingly stringent and complex manufacturing issues. Deep subwavelength and atomic-scale process and device physics effects increasingly invade and impact the design flow strongly at a time when the pressures for increased design productivity are escalating at a superlinear rate. Productivity gaps, both upstream in design and downstream in fabrication, are anticipated by many to increase due to dramatic increases in inherent complexity of the design-to-chip equation. Furthermore, the cost of lithographic equipment is increasing at an aggressive compound growth rate so large that we can no longer economically derive the benefit of the increased number of circuits per unit area unless we extend the life of lithographic equipment for more generations, and deeper into the subwavelength regime. Do these trends unambiguously lead to the conclusion that we need a revolution in design and design-process integration to enable the sub-100nm nodes? Or is such a premise similar to other well-known predictions of technology brick walls that never came true?

Bayesian cloud detection for MERIS, AATSR, and their combination

NASA Astrophysics Data System (ADS)

Hollstein, A.; Fischer, J.; Carbajal Henken, C.; Preusker, R.

2014-11-01

A broad range of different of Bayesian cloud detection schemes is applied to measurements from the Medium Resolution Imaging Spectrometer (MERIS), the Advanced Along-Track Scanning Radiometer (AATSR), and their combination. The cloud masks were designed to be numerically efficient and suited for the processing of large amounts of data. Results from the classical and naive approach to Bayesian cloud masking are discussed for MERIS and AATSR as well as for their combination. A sensitivity study on the resolution of multidimensional histograms, which were post-processed by Gaussian smoothing, shows how theoretically insufficient amounts of truth data can be used to set up accurate classical Bayesian cloud masks. Sets of exploited features from single and derived channels are numerically optimized and results for naive and classical Bayesian cloud masks are presented. The application of the Bayesian approach is discussed in terms of reproducing existing algorithms, enhancing existing algorithms, increasing the robustness of existing algorithms, and on setting up new classification schemes based on manually classified scenes.

Susceptibility weighted imaging: differentiating between calcification and hemosiderin*

PubMed Central

Barbosa, Jeam Haroldo Oliveira; Santos, Antonio Carlos; Salmon, Carlos Ernesto Garrido

2015-01-01

Objective To present a detailed explanation on the processing of magnetic susceptibility weighted imaging (SWI), demonstrating the effects of echo time and sensitive mask on the differentiation between calcification and hemosiderin. Materials and Methods Computed tomography and magnetic resonance (magnitude and phase) images of six patients (age range 41– 54 years; four men) were retrospectively selected. The SWI images processing was performed using the Matlab’s own routine. Results Four out of the six patients showed calcifications at computed tomography images and their SWI images demonstrated hyperintense signal at the calcification regions. The other patients did not show any calcifications at computed tomography, and SWI revealed the presence of hemosiderin deposits with hypointense signal. Conclusion The selection of echo time and of the mask may change all the information on SWI images, and compromise the diagnostic reliability. Amongst the possible masks, the authors highlight that the sigmoid mask allows for contrasting calcifications and hemosiderin on a single SWI image. PMID:25987750

The temporal dynamics of masked repetition picture priming effects: manipulations of stimulus-onset asynchrony (SOA) and prime duration.

PubMed

Eddy, Marianna D; Holcomb, Phillip J

2010-06-22

The current study used event-related potentials (ERPs) and masked repetition priming to examine the time-course of picture processing. We manipulated the stimulus-onset asynchrony (110 ms, 230 ms, 350 ms, and 470 ms) between repeated and unrepeated prime-target pairs while holding the prime duration constant (50 ms) (Experiment 1) as well as the prime durations (30 ms, 50 ms, 70 ms, and 90 ms) (Experiment 2) with a constant SOA of 110 ms in a masked repetition priming paradigm with pictures. The aim of this study was to further elucidate the mechanisms underlying previously observed ERP components in masked priming with pictures. We found that both the N/P190 and N400 are modulated by changes in prime duration and SOA, however, it appears that longer prime exposure rather than a longer SOA leads to more in-depth processing as indexed by larger N400 effects. (c) 2010 Elsevier B.V. All rights reserved.

Comparison of OPC job prioritization schemes to generate data for mask manufacturing

NASA Astrophysics Data System (ADS)

Lewis, Travis; Veeraraghavan, Vijay; Jantzen, Kenneth; Kim, Stephen; Park, Minyoung; Russell, Gordon; Simmons, Mark

2015-03-01

Delivering mask ready OPC corrected data to the mask shop on-time is critical for a foundry to meet the cycle time commitment for a new product. With current OPC compute resource sharing technology, different job scheduling algorithms are possible, such as, priority based resource allocation and fair share resource allocation. In order to maximize computer cluster efficiency, minimize the cost of the data processing and deliver data on schedule, the trade-offs of each scheduling algorithm need to be understood. Using actual production jobs, each of the scheduling algorithms will be tested in a production tape-out environment. Each scheduling algorithm will be judged on its ability to deliver data on schedule and the trade-offs associated with each method will be analyzed. It is now possible to introduce advance scheduling algorithms to the OPC data processing environment to meet the goals of on-time delivery of mask ready OPC data while maximizing efficiency and reducing cost.

Edge enhancement and image equalization by unsharp masking using self-adaptive photochromic filters.

PubMed

Ferrari, José A; Flores, Jorge L; Perciante, César D; Frins, Erna

2009-07-01

A new method for real-time edge enhancement and image equalization using photochromic filters is presented. The reversible self-adaptive capacity of photochromic materials is used for creating an unsharp mask of the original image. This unsharp mask produces a kind of self filtering of the original image. Unlike the usual Fourier (coherent) image processing, the technique we propose can also be used with incoherent illumination. Validation experiments with Bacteriorhodopsin and photochromic glass are presented.

Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning

NASA Astrophysics Data System (ADS)

Varghese, Ivin; Bowers, Charles W.; Balooch, Mehdi

2011-11-01

Cryogenic CO2 aerosol cleaning being a dry, chemically-inert and residue-free process is used in the production of optical lithography masks. It is an attractive cleaning option for the mask industry to achieve the requirement for removal of all printable soft defects and repair debris down to the 50nm printability specification. In the technique, CO2 clusters are formed by sudden expansion of liquid from high to almost atmospheric pressure through an optimally designed nozzle orifice. They are then directed on to the soft defects or debris for momentum transfer and subsequent damage free removal from the mask substrate. Unlike aggressive acid based wet cleaning, there is no degradation of the mask after processing with CO2, i.e., no critical dimension (CD) change, no transmission/phase losses, or chemical residue that leads to haze formation. Therefore no restriction on number of cleaning cycles is required to be imposed, unlike other cleaning methods. CO2 aerosol cleaning has been implemented for several years as full mask final clean in production environments at several state of the art mask shops. Over the last two years our group reported successful removal of all soft defects without damage to the fragile SRAF features, zero adders (from the cleaning and handling mechanisms) down to a 50nm printability specification. In addition, CO2 aerosol cleaning is being utilized to remove debris from Post-RAVE repair of hard defects in order to achieve the goal of no printable defects. It is expected that CO2 aerosol cleaning can be extended to extreme ultraviolet (EUV) masks. In this paper, we report advances being made in nozzle design qualification for optimum snow properties (size, velocity and flux) using Phase Doppler Anemometry (PDA) technique. In addition the two new areas of focus for CO2 aerosol cleaning i.e. pellicle glue residue removal on optical masks, and ruthenium (Ru) film on EUV masks are presented. Usually, the residue left over after the pellicle has been removed from returned masks (after long term usage/exposure in the wafer fab), requires a very aggressive SPM wet clean, that drastically reduces the available budget for mask properties (CD, phase/transmission). We show that CO2aerosol cleaning can be utilized to remove the bulk of the glue residue effectively, while preserving the mask properties. This application required a differently designed nozzle to impart the required removal force for the sticky glue residue. A new nozzle was developed and qualified that resulted in PRE in the range of 92-98%. Results also include data on a patterned mask that was exposed in a lithography stepper in a wafer production environment. On EUV mask, our group has experimentally demonstrated that 50 CO2 cleaning cycles of Ru film on the EUV Front-side resulted in no appreciable reflectivity change, implying that no degradation of the Ru film occurs.

Influence of Temporal Expectations on Response Priming by Subliminal Faces

PubMed Central

Guex, Raphael; Vuilleumier, Patrik

2016-01-01

Unconscious processes are often assumed immune from attention influence. Recent behavioral studies suggest however that the processing of subliminal information can be influenced by temporal attention. To examine the neural mechanisms underlying these effects, we used a stringent masking paradigm together with fMRI to investigate how temporal attention modulates the processing of unseen (masked) faces. Participants performed a gender decision task on a visible neutral target face, preceded by a masked prime face that could vary in gender (same or different than target) and emotion expression (neutral or fearful). We manipulated temporal attention by instructing participants to expect targets to appear either early or late during the stimulus sequence. Orienting temporal attention to subliminal primes influenced response priming by masked faces, even when gender was incongruent. In addition, gender-congruent primes facilitated responses regardless of attention while gender-incongruent primes reduced accuracy when attended. Emotion produced no differential effects. At the neural level, incongruent and temporally unexpected primes increased brain response in regions of the fronto-parietal attention network, reflecting greater recruitment of executive control and reorienting processes. Congruent and expected primes produced higher activations in fusiform cortex, presumably reflecting facilitation of perceptual processing. These results indicate that temporal attention can influence subliminal processing of face features, and thus facilitate information integration according to task-relevance regardless of conscious awareness. They also suggest that task-congruent information between prime and target may facilitate response priming even when temporal attention is not selectively oriented to the prime onset time. PMID:27764124

Influence of Temporal Expectations on Response Priming by Subliminal Faces.

PubMed

Pichon, Swann; Guex, Raphael; Vuilleumier, Patrik

2016-01-01

Unconscious processes are often assumed immune from attention influence. Recent behavioral studies suggest however that the processing of subliminal information can be influenced by temporal attention. To examine the neural mechanisms underlying these effects, we used a stringent masking paradigm together with fMRI to investigate how temporal attention modulates the processing of unseen (masked) faces. Participants performed a gender decision task on a visible neutral target face, preceded by a masked prime face that could vary in gender (same or different than target) and emotion expression (neutral or fearful). We manipulated temporal attention by instructing participants to expect targets to appear either early or late during the stimulus sequence. Orienting temporal attention to subliminal primes influenced response priming by masked faces, even when gender was incongruent. In addition, gender-congruent primes facilitated responses regardless of attention while gender-incongruent primes reduced accuracy when attended. Emotion produced no differential effects. At the neural level, incongruent and temporally unexpected primes increased brain response in regions of the fronto-parietal attention network, reflecting greater recruitment of executive control and reorienting processes. Congruent and expected primes produced higher activations in fusiform cortex, presumably reflecting facilitation of perceptual processing. These results indicate that temporal attention can influence subliminal processing of face features, and thus facilitate information integration according to task-relevance regardless of conscious awareness. They also suggest that task-congruent information between prime and target may facilitate response priming even when temporal attention is not selectively oriented to the prime onset time.

Simultaneous masking additivity for short Gaussian-shaped tones: spectral effects.

PubMed

Laback, Bernhard; Necciari, Thibaud; Balazs, Peter; Savel, Sophie; Ystad, Sølvi

2013-08-01

Laback et al. [(2011). J. Acoust. Soc. Am. 129, 888-897] investigated the additivity of nonsimultaneous masking using short Gaussian-shaped tones as maskers and target. The present study involved Gaussian stimuli to measure the additivity of simultaneous masking for combinations of up to four spectrally separated maskers. According to most basilar membrane measurements, the maskers should be processed linearly at the characteristic frequency (CF) of the target. Assuming also compression of the target, all masker combinations should produce excess masking (exceeding linear additivity). The results for a pair of maskers flanking the target indeed showed excess masking. The amount of excess masking could be predicted by a model assuming summation of masker-evoked excitations in intensity units at the target CF and compression of the target, using compressive input/output functions derived from the nonsimultaneous masking study. However, the combinations of lower-frequency maskers showed much less excess masking than predicted by the model. This cannot easily be attributed to factors like off-frequency listening, combination tone perception, or between-masker suppression. It was better predicted, however, by assuming weighted intensity summation of masker excitations. The optimum weights for the lower-frequency maskers were smaller than one, consistent with partial masker compression as indicated by recent psychoacoustic data.

Evaluation of taste-masking effects of pharmaceutical sweeteners with an electronic tongue system.

PubMed

Choi, Du Hyung; Kim, Nam Ah; Nam, Tack Soo; Lee, Sangkil; Jeong, Seong Hoon

2014-03-01

Electronic tongue systems have been developed for taste measurement of bitter drug substances in accurate taste comparison to development palatable oral formulations. This study was to evaluate the taste masking effect of conventional pharmaceutical sweeteners such as neohesperidin dihydrochalcone, sucrose, sucralose and aspartame. The model drugs were acetaminophen, ibuprofen, tramadol hydrochloride, and sildenafil citrate (all at 20 mM). The degree of bitterness was measured by a multichannel taste sensor system (an electronic tongue). The data was collected by seven sensors and analyzed by a statistical method of principal components analysis (PCA). The effect of taste masking excipient was dependent on the type of model drug. Changing the concentration of taste masking excipients affected the sensitivity of taste masking effect according to the type of drug. As the excipient concentration increased, the effect of taste masking increased. Moreover, most of the sensors showed a concentration-dependent pattern of the taste-masking agents as higher concentration provided higher selectivity. This might indicate that the sensors can detect small concentration changes of a chemical in solution. These results suggest that the taste masking could be evaluated based on the data of the electronic tongue system and that the formulation development process could be performed in a more efficient way.

Mask industry assessment trend analysis: 2012

NASA Astrophysics Data System (ADS)

Chan, Y. David

2012-02-01

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply among the top critical issues for lithography. A survey was designed by SEMATECH with input from semiconductor company mask technologists and merchant mask suppliers to objectively assess the overall conditions of the mask industry. With the continued support of the industry, this year's assessment was the tenth in the current series of annual reports. This year's survey is basically the same as the 2005 through 2011 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that ultimately produce a detailed profile of both the business and technical status of the critical mask industry. We received data from 11 companies this year, which was a record high since the beginning of the series. The responding companies represented more than 96% of the volume shipped and about 90% of the 2011 revenue for the photomask industry. These survey reports are often used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. They will continue to serve as a valuable reference to identify strengths and opportunities. Results can also be used to guide future investments in critical path issues.

Electrochemical Micromachining with Fiber Laser Masking for 304 Stainless Steel

NASA Astrophysics Data System (ADS)

Li, Xiaohai; Wang, Shuming; Wang, Dong; Tong, Han

2017-10-01

In order to fabricate micro structure, the combined machining of electrochemical micro machining (EMM) and laser masking for 304 stainless steel was studied. A device of composite machining of EMM with laser masking was developed, and the experiments of EMM with laser masking were carried out. First, by marking pattern with fiber laser on the surface of 304 stainless steel, the special masking layer can be formed. Through X ray photoelectron spectroscopy (XPS), the corrosion resistance of laser masking layer was analyzed. It is proved by XPS that the iron oxide and chromium oxide on the surface of stainless steel generates due to air oxidation when laser scanning heats. Second, the localization and precision of EMM are improved, since the marking patterns forming on the surface of stainless steel by laser masking play a protective role in the process of subsequent EMM when the appropriate parameters of EMM are selected. At last, the shape and the roughness of the machined samples were measured by SEM and optical profilometer and analyzed. The results show that the rapid fabrication of micro structures on the 304 stainless steel surface can be achieved by EMM with fiber laser masking, which has a good prospect in the field of micro machining.

Recognition of speech in noise after application of time-frequency masks: Dependence on frequency and threshold parameters

PubMed Central

Sinex, Donal G.

2013-01-01

Binary time-frequency (TF) masks can be applied to separate speech from noise. Previous studies have shown that with appropriate parameters, ideal TF masks can extract highly intelligible speech even at very low speech-to-noise ratios (SNRs). Two psychophysical experiments provided additional information about the dependence of intelligibility on the frequency resolution and threshold criteria that define the ideal TF mask. Listeners identified AzBio Sentences in noise, before and after application of TF masks. Masks generated with 8 or 16 frequency bands per octave supported nearly-perfect identification. Word recognition accuracy was slightly lower and more variable with 4 bands per octave. When TF masks were generated with a local threshold criterion of 0 dB SNR, the mean speech reception threshold was −9.5 dB SNR, compared to −5.7 dB for unprocessed sentences in noise. Speech reception thresholds decreased by about 1 dB per dB of additional decrease in the local threshold criterion. Information reported here about the dependence of speech intelligibility on frequency and level parameters has relevance for the development of non-ideal TF masks for clinical applications such as speech processing for hearing aids. PMID:23556604

The impact of perilaryngeal vibration on the self-perception of loudness and the Lombard effect.

PubMed

Brajot, François-Xavier; Nguyen, Don; DiGiovanni, Jeffrey; Gracco, Vincent L

2018-04-05

The role of somatosensory feedback in speech and the perception of loudness was assessed in adults without speech or hearing disorders. Participants completed two tasks: loudness magnitude estimation of a short vowel and oral reading of a standard passage. Both tasks were carried out in each of three conditions: no-masking, auditory masking alone, and mixed auditory masking plus vibration of the perilaryngeal area. A Lombard effect was elicited in both masking conditions: speakers unconsciously increased vocal intensity. Perilaryngeal vibration further increased vocal intensity above what was observed for auditory masking alone. Both masking conditions affected fundamental frequency and the first formant frequency as well, but only vibration was associated with a significant change in the second formant frequency. An additional analysis of pure-tone thresholds found no difference in auditory thresholds between masking conditions. Taken together, these findings indicate that perilaryngeal vibration effectively masked somatosensory feedback, resulting in an enhanced Lombard effect (increased vocal intensity) that did not alter speakers' self-perception of loudness. This implies that the Lombard effect results from a general sensorimotor process, rather than from a specific audio-vocal mechanism, and that the conscious self-monitoring of speech intensity is not directly based on either auditory or somatosensory feedback.

Automatic emotion processing as a function of trait emotional awareness: an fMRI study

PubMed Central

Lichev, Vladimir; Sacher, Julia; Ihme, Klas; Rosenberg, Nicole; Quirin, Markus; Lepsien, Jöran; Pampel, André; Rufer, Michael; Grabe, Hans-Jörgen; Kugel, Harald; Kersting, Anette; Villringer, Arno; Lane, Richard D.

2015-01-01

It is unclear whether reflective awareness of emotions is related to extent and intensity of implicit affective reactions. This study is the first to investigate automatic brain reactivity to emotional stimuli as a function of trait emotional awareness. To assess emotional awareness the Levels of Emotional Awareness Scale (LEAS) was administered. During scanning, masked happy, angry, fearful and neutral facial expressions were presented to 46 healthy subjects, who had to rate the fit between artificial and emotional words. The rating procedure allowed assessment of shifts in implicit affectivity due to emotion faces. Trait emotional awareness was associated with increased activation in the primary somatosensory cortex, inferior parietal lobule, anterior cingulate gyrus, middle frontal and cerebellar areas, thalamus, putamen and amygdala in response to masked happy faces. LEAS correlated positively with shifts in implicit affect caused by masked happy faces. According to our findings, people with high emotional awareness show stronger affective reactivity and more activation in brain areas involved in emotion processing and simulation during the perception of masked happy facial expression than people with low emotional awareness. High emotional awareness appears to be characterized by an enhanced positive affective resonance to others at an automatic processing level. PMID:25140051

The effect of integration masking on visual processing in perceptual categorization.

PubMed

Hélie, Sébastien

2017-08-01

Learning to recognize and categorize objects is an essential cognitive skill allowing animals to function in the world. However, animals rarely have access to a canonical view of an object in an uncluttered environment. Hence, it is essential to study categorization under noisy, degraded conditions. In this article, we explore how the brain processes categorization stimuli in low signal-to-noise conditions using multivariate pattern analysis. We used an integration masking paradigm with mask opacity of 50%, 60%, and 70% inside a magnetic resonance imaging scanner. The results show that mask opacity affects blood-oxygen-level dependent (BOLD) signal in visual processing areas (V1, V2, V3, and V4) but does not affect the BOLD signal in brain areas traditionally associated with categorization (prefrontal cortex, striatum, hippocampus). This suggests that when a stimulus is difficult to extract from its background (e.g., low signal-to-noise ratio), the visual system extracts the stimulus and that activity in areas typically associated with categorization are not affected by the difficulty level of the visual conditions. We conclude with implications of this result for research on visual attention, categorization, and the integration of these fields. Copyright © 2017 Elsevier Inc. All rights reserved.

Dissociable brain mechanisms underlying the conscious and unconscious control of behavior.

PubMed

van Gaal, Simon; Lamme, Victor A F; Fahrenfort, Johannes J; Ridderinkhof, K Richard

2011-01-01

Cognitive control allows humans to overrule and inhibit habitual responses to optimize performance in challenging situations. Contradicting traditional views, recent studies suggest that cognitive control processes can be initiated unconsciously. To further capture the relation between consciousness and cognitive control, we studied the dynamics of inhibitory control processes when triggered consciously versus unconsciously in a modified version of the stop task. Attempts to inhibit an imminent response were often successful after unmasked (visible) stop signals. Masked (invisible) stop signals rarely succeeded in instigating overt inhibition but did trigger slowing down of response times. Masked stop signals elicited a sequence of distinct ERP components that were also observed on unmasked stop signals. The N2 component correlated with the efficiency of inhibitory control when elicited by unmasked stop signals and with the magnitude of slowdown when elicited by masked stop signals. Thus, the N2 likely reflects the initiation of inhibitory control, irrespective of conscious awareness. The P3 component was much reduced in amplitude and duration on masked versus unmasked stop trials. These patterns of differences and similarities between conscious and unconscious cognitive control processes are discussed in a framework that differentiates between feedforward and feedback connections in yielding conscious experience.

High density plasma etching of magnetic devices

NASA Astrophysics Data System (ADS)

Jung, Kee Bum

Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3-rich to achieve the highest etch rates. Several different mask materials were investigated, including photoresist, thermal oxide and deposited oxide. Photoresist etches very rapidly in CO/NH 3 and use of a hard mask is necessary to achieve pattern transfer. Due to its physically dominated nature, the CO/NH3 chemistry appears suited to shallow etch depth (≤0.5mum) applications, but mask erosion leads to sloped feature sidewalls for deeper features.

Performance of the ALTA 3500 scanned-laser mask lithography system

NASA Astrophysics Data System (ADS)

Buck, Peter D.; Buxbaum, Alex H.; Coleman, Thomas P.; Tran, Long

1998-09-01

The ALTA 3500, an advanced scanned-laser mask lithography tool produced by Etec, was introduced to the marketplace in September 1997. The system architecture was described and an initial performance evaluation was presented. This system, based on the ALTA 3000, uses a new 33.3X, 0.8 NA final reduction lens to reduce the spot size to 0.27 micrometers FWHM, thereby affording improved resolution and pattern acuity on the mask. To take advantage of the improved resolution, a new anisotropic chrome etch process has been developed and introduced along with change from Olin 895i resist to TOK iP3600 resist. In this paper we will more extensively describe the performance of the ALTA 3500 and the performance of these new processes.

Ultra-low roughness magneto-rheological finishing for EUV mask substrates

NASA Astrophysics Data System (ADS)

Dumas, Paul; Jenkins, Richard; McFee, Chuck; Kadaksham, Arun J.; Balachandran, Dave K.; Teki, Ranganath

2013-09-01

EUV mask substrates, made of titania-doped fused silica, ideally require sub-Angstrom surface roughness, sub-30 nm flatness, and no bumps/pits larger than 1 nm in height/depth. To achieve the above specifications, substrates must undergo iterative global and local polishing processes. Magnetorheological finishing (MRF) is a local polishing technique which can accurately and deterministically correct substrate figure, but typically results in a higher surface roughness than the current requirements for EUV substrates. We describe a new super-fine MRF® polishing fluid whichis able to meet both flatness and roughness specifications for EUV mask blanks. This eases the burden on the subsequent global polishing process by decreasing the polishing time, and hence the defectivity and extent of figure distortion.

Effects of set-size and lateral masking in visual search.

PubMed

Põder, Endel

2004-01-01

In the present research, the roles of lateral masking and central processing limitations in visual search were studied. Two search conditions were used: (1) target differed from distractors by presence/absence of a simple feature; (2) target differed by relative position of the same components only. The number of displayed stimuli (set-size) and the distance between neighbouring stimuli were varied as independently as possible in order to measure the effect of both. The effect of distance between stimuli (lateral masking) was found to be similar in both conditions. The effect of set-size was much larger for relative position stimuli. The results support the view that perception of relative position of stimulus components is limited mainly by the capacity of central processing.

Preparation of sildenafil citrate microcapsules and in vitro/in vivo evaluation of taste masking efficiency.

PubMed

Yi, Eun-Jin; Kim, Ju-Young; Rhee, Yun-Seok; Kim, Su-Hyeon; Lee, Hyo-Joong; Park, Chun-Woong; Park, Eun-Seok

2014-05-15

The aim of the present study was to prepare the particulate taste-masking system to mask the bitter taste of sildenafil citrate (SC), a well-known phosphodiesterase-5 inhibitor used for erectile dysfunction (ED) and pulmonary artery hypertension (PAH). It was evaluated for the taste masking efficiency by the in vitro measurement using electronic tongue (e-tongue) system and the in vivo human panel sensory test. Microcapsules were prepared by microencapsulation with a gastro-soluble polymer, Eudragit(®) E100 (E100), using a spray drying technique at four different weight ratios (2:1, 1:1, 1:2, and 1:3). Characters of prepared microcapsules and the effect of polymer ratio on the taste masking were investigated. The particle morphology and the distribution of SC in microcapsules were observed by SEM-EDS and physical properties were evaluated by PXRD, Raman spectroscopy, and DSC. By drug dissolution studies at pH 1.2 buffer and DW, it was found that E100 was not able to alter the drug release in stomach. As the result of taste evaluation studies, there were a good correlation (R(2)=0.9867) between the weight ratio of polymer and the taste masking efficiency expressed in the distances on the PCA map of the e-tongue data, and a relevance of the e-tongue measurement with the result of sensory test. Copyright © 2014. Published by Elsevier B.V.

A study of an alignment-less lithography method as an educational resource

NASA Astrophysics Data System (ADS)

Kai, Kazuho; Shiota, Koki; Nagaoka, Shiro; Mahmood, Mohamad Rusop Bin Haji; Kawai, Akira

2016-07-01

A simplification of the lithography process was studied. The simplification method of photolithography, named "alignment-less lithography" was proposed by omitting the photomask alignment process in photolithography process using mechanically aligned photomasks and substrate by using a simple jig on which countersinks were formed. Photomasks made of glass and the photomasks made of transparent plastic sheets were prepared for the process. As the result, approximately 5µm in the case of the glass mask, and 20µm in the case of the OHP mask were obtained with repetitive accuracies, respectively. It was confirmed that the alignment-less lithography method was successful. The possibility of the application to an educational program, such as a heuristic for solving problems was suggested using the method with the OHP mask. The nMOS FET fabrication process was successfully demonstrated using this method. The feasibility of this process was confirmed. It is expected that a totally simplified device fabrication process can be achievable when combined with other simplifications, such ass the simplified impurity diffusion processes using PSG and BSG thin film as diffusion source prepared by the Sol-Gel material under normal air environment.

The characteristics of bacterial nanocellulose gel releasing silk sericin for facial treatment.

PubMed

Aramwit, Pornanong; Bang, Nipaporn

2014-12-09

Recently, naturally derived facial masks with beneficial biological properties have received increasing interest. In this study, silk sericin-releasing bacterial nanocellulose gel was developed to be applied as a bioactive mask for facial treatment. The silk sericin-releasing bacterial nanocellulose gel produced at a pH of 4.5 had an ultrafine and extremely pure fiber network structure. The mechanical properties and moisture absorption ability of the gel were improved, compared to those of the commercially available paper mask. Silk sericin could be control-released from the gel. A peel test with porcine skin showed that the gel was less adhesive than the commercially available paper mask, which would be removed from the face more easily without pain. The in vitro cytotoxicity test showed that the gel was not toxic to L929 mouse fibroblast and HaCaT human keratinocyte cells. Furthermore, when implanted subcutaneously and evaluated according to ISO10993-6 standard, the gel was not irritant to tissue. The silk sericin-releasing bacterial nanocellulose gel had appropriate physical and biological properties and safety for the facial treatment application.

Parallel Implementation of the Terrain Masking Algorithm

DTIC Science & Technology

1994-03-01

contains behavior rules which can define a computation or an algorithm. It can communicate with other process nodes, it can contain local data, and it can...terrain maskirg calculation is being performed. It is this algorithm that comsumes about seventy percent of the total terrain masking calculation time

ProTEK PSB as Biotechnology Photosensitive Protection Mask on 3C-SiC-on-Si in MEMS Sensor

NASA Astrophysics Data System (ADS)

Marsi, N.; Majlis, B. Y.; Mohd-Yasin, F.; Hamzah, A. A.; Mohd Rus, A. Z.

2016-11-01

This project presents the fabrication of MEMS employing a cubic silicon carbide (3C- SiC) on silicon wafer using newly developed ProTEK PSB as biotechnology photosensitive protection mask. This new biotechnology can reduce the number of processes and simplify the process flow with minimal impact on overall undercut performance. The 680 pm thick wafer is back-etched, leaving the 3C-SiC thin film with a thickness of 1.0 μm as the flexible diaphragm to detect pressure. The effect of the new coating of ProTEK PSB on different KOH solvents were investigated depending on various factors such as development time, final cure temperature and the thickness of the ProTEK PSB deposited layer. It is found that 6.174 μm thickness of ProTEK PSB offers some possibility of reducing the processing time compared to silicon nitride etch masks in KOH (55%wt, 80°C). The new ProTEK PSB biotechnology photosensitive protection mask indicates good stability and sustains its performance in different treatments under KOH and IPA for 8 hours. This work also revealed that the fabrication of MEMS sensors using the new biotechnology photosensitive protection mask provides a simple assembly approach and reduces manufacturing costs. The MEMS sensor can operate up to 500 °C as indicated under the sensitivity of 0.826 pF/MPa with nonlinearity and hysteresis of 0.61% and 3.13%, respectively.

Achieving mask order processing automation, interoperability and standardization based on P10

NASA Astrophysics Data System (ADS)

Rodriguez, B.; Filies, O.; Sadran, D.; Tissier, Michel; Albin, D.; Stavroulakis, S.; Voyiatzis, E.

2007-02-01

Last year the MUSCLE (Masks through User's Supply Chain: Leadership by Excellence) project was presented. Here is the project advancement. A key process in mask supply chain management is the exchange of technical information for ordering masks. This process is large, complex, company specific and error prone, and leads to longer cycle times and higher costs due to missing or wrong inputs. Its automation and standardization could produce significant benefits. We need to agree on the standard for mandatory and optional parameters, and also a common way to describe parameters when ordering. A system was created to improve the performance in terms of Key Performance Indicators (KPIs) such as cycle time and cost of production. This tool allows us to evaluate and measure the effect of factors, as well as the effect of implementing the improvements of the complete project. Next, a benchmark study and a gap analysis were performed. These studies show the feasibility of standardization, as there is a large overlap in requirements. We see that the SEMI P10 standard needs enhancements. A format supporting the standard is required, and XML offers the ability to describe P10 in a flexible way. Beyond using XML for P10, the semantics of the mask order should also be addressed. A system design and requirements for a reference implementation for a P10 based management system are presented, covering a mechanism for the evolution and for version management and a design for P10 editing and data validation.

Spontaneous Gender Categorization in Masking and Priming Studies: Key for Distinguishing Jane from John Doe but Not Madonna from Sinatra

PubMed Central

Habibi, Ruth; Khurana, Beena

2012-01-01

Facial recognition is key to social interaction, however with unfamiliar faces only generic information, in the form of facial stereotypes such as gender and age is available. Therefore is generic information more prominent in unfamiliar versus familiar face processing? In order to address the question we tapped into two relatively disparate stages of face processing. At the early stages of encoding, we employed perceptual masking to reveal that only perception of unfamiliar face targets is affected by the gender of the facial masks. At the semantic end; using a priming paradigm, we found that while to-be-ignored unfamiliar faces prime lexical decisions to gender congruent stereotypic words, familiar faces do not. Our findings indicate that gender is a more salient dimension in unfamiliar relative to familiar face processing, both in early perceptual stages as well as later semantic stages of person construal. PMID:22389697

Rapid mask prototyping for microfluidics.

PubMed

Maisonneuve, B G C; Honegger, T; Cordeiro, J; Lecarme, O; Thiry, T; Fuard, D; Berton, K; Picard, E; Zelsmann, M; Peyrade, D

2016-03-01

With the rise of microfluidics for the past decade, there has come an ever more pressing need for a low-cost and rapid prototyping technology, especially for research and education purposes. In this article, we report a rapid prototyping process of chromed masks for various microfluidic applications. The process takes place out of a clean room, uses a commercially available video-projector, and can be completed in less than half an hour. We quantify the ranges of fields of view and of resolutions accessible through this video-projection system and report the fabrication of critical microfluidic components (junctions, straight channels, and curved channels). To exemplify the process, three common devices are produced using this method: a droplet generation device, a gradient generation device, and a neuro-engineering oriented device. The neuro-engineering oriented device is a compartmentalized microfluidic chip, and therefore, required the production and the precise alignment of two different masks.

Rapid mask prototyping for microfluidics

PubMed Central

Maisonneuve, B. G. C.; Honegger, T.; Cordeiro, J.; Lecarme, O.; Thiry, T.; Fuard, D.; Berton, K.; Picard, E.; Zelsmann, M.; Peyrade, D.

2016-01-01

With the rise of microfluidics for the past decade, there has come an ever more pressing need for a low-cost and rapid prototyping technology, especially for research and education purposes. In this article, we report a rapid prototyping process of chromed masks for various microfluidic applications. The process takes place out of a clean room, uses a commercially available video-projector, and can be completed in less than half an hour. We quantify the ranges of fields of view and of resolutions accessible through this video-projection system and report the fabrication of critical microfluidic components (junctions, straight channels, and curved channels). To exemplify the process, three common devices are produced using this method: a droplet generation device, a gradient generation device, and a neuro-engineering oriented device. The neuro-engineering oriented device is a compartmentalized microfluidic chip, and therefore, required the production and the precise alignment of two different masks. PMID:27014396

Spatial frequency filtered images reveal differences between masked and unmasked processing of emotional information.

PubMed

Rohr, Michaela; Wentura, Dirk

2014-10-01

High and low spatial frequency information has been shown to contribute differently to the processing of emotional information. In three priming studies using spatial frequency filtered emotional face primes, emotional face targets, and an emotion categorization task, we investigated this issue further. Differences in the pattern of results between short and masked, and short and long unmasked presentation conditions emerged. Given long and unmasked prime presentation, high and low frequency primes triggered emotion-specific priming effects. Given brief and masked prime presentation in Experiment 2, we found a dissociation: High frequency primes caused a valence priming effect, whereas low frequency primes yielded a differentiation between low and high arousing information within the negative domain. Brief and unmasked prime presentation in Experiment 3 revealed that subliminal processing of primes was responsible for the pattern observed in Experiment 2. The implications of these findings for theories of early emotional information processing are discussed. Copyright © 2014 Elsevier Inc. All rights reserved.

Nonconscious semantic processing of emotional words modulates conscious access

PubMed Central

Gaillard, Raphaël; Del Cul, Antoine; Naccache, Lionel; Vinckier, Fabien; Cohen, Laurent; Dehaene, Stanislas

2006-01-01

Whether masked words can be processed at a semantic level remains a controversial issue in cognitive psychology. Although recent behavioral studies have demonstrated masked semantic priming for number words, attempts to generalize this finding to other categories of words have failed. Here, as an alternative to subliminal priming, we introduce a sensitive behavioral method to detect nonconscious semantic processing of words. The logic of this method consists of presenting words close to the threshold for conscious perception and examining whether their semantic content modulates performance in objective and subjective tasks. Our results disclose two independent sources of modulation of the threshold for access to consciousness. First, prior conscious perception of words increases the detection rate of the same words when they are subsequently presented with stronger masking. Second, the threshold for conscious access is lower for emotional words than for neutral ones, even for words that have not been previously consciously perceived, thus implying that written words can receive nonconscious semantic processing. PMID:16648261

The development of sentence interpretation: effects of perceptual, attentional and semantic interference.

PubMed

Leech, Robert; Aydelott, Jennifer; Symons, Germaine; Carnevale, Julia; Dick, Frederic

2007-11-01

How does the development and consolidation of perceptual, attentional, and higher cognitive abilities interact with language acquisition and processing? We explored children's (ages 5-17) and adults' (ages 18-51) comprehension of morphosyntactically varied sentences under several competing speech conditions that varied in the degree of attentional demands, auditory masking, and semantic interference. We also evaluated the relationship between subjects' syntactic comprehension and their word reading efficiency and general 'speed of processing'. We found that the interactions between perceptual and attentional processes and complex sentence interpretation changed considerably over the course of development. Perceptual masking of the speech signal had an early and lasting impact on comprehension, particularly for more complex sentence structures. In contrast, increased attentional demand in the absence of energetic auditory masking primarily affected younger children's comprehension of difficult sentence types. Finally, the predictability of syntactic comprehension abilities by external measures of development and expertise is contingent upon the perceptual, attentional, and semantic milieu in which language processing takes place.

Medicare Home Health Agencies: Weaknesses in Federal and State Oversight Mask Potential Quality Issues

DTIC Science & Technology

2002-07-01

solely venipuncture for the purpose of obtaining a blood sample), physical therapy , speech- language pathology services, or have a continuing need for...to require surgery for the wound. The complaint also alleged that the HHA was not providing this patient with physical therapy services as required...to determine the correct investigation time frame. For instance, one complaint in Georgia alleged that a patient was not given physical therapy as

Analysis of geostationary satellite-derived cloud parameters associated with environments with high ice water content

NASA Astrophysics Data System (ADS)

de Laat, Adrianus; Defer, Eric; Delanoë, Julien; Dezitter, Fabien; Gounou, Amanda; Grandin, Alice; Guignard, Anthony; Fokke Meirink, Jan; Moisselin, Jean-Marc; Parol, Frédéric

2017-04-01

We present an evaluation of the ability of passive broadband geostationary satellite measurements to detect high ice water content (IWC > 1 g m-3) as part of the European High Altitude Ice Crystals (HAIC) project for detection of upper-atmospheric high IWC, which can be a hazard for aviation. We developed a high IWC mask based on measurements of cloud properties using the Cloud Physical Properties (CPP) algorithm applied to the geostationary Meteosat Second Generation (MSG) Spinning Enhanced Visible and Infrared Imager (SEVIRI). Evaluation of the high IWC mask with satellite measurements of active remote sensors of cloud properties (CLOUDSAT/CALIPSO combined in the DARDAR (raDAR-liDAR) product) reveals that the high IWC mask is capable of detecting high IWC values > 1 g m-3 in the DARDAR profiles with a probability of detection of 60-80 %. The best CPP predictors of high IWC were the condensed water path, cloud optical thickness, cloud phase, and cloud top height. The evaluation of the high IWC mask against DARDAR provided indications that the MSG-CPP high IWC mask is more sensitive to cloud ice or cloud water in the upper part of the cloud, which is relevant for aviation purposes. Biases in the CPP results were also identified, in particular a solar zenith angle (SZA) dependence that reduces the performance of the high IWC mask for SZAs > 60°. Verification statistics show that for the detection of high IWC a trade-off has to be made between better detection of high IWC scenes and more false detections, i.e., scenes identified by the high IWC mask that do not contain IWC > 1 g m-3. However, the large majority of these detections still contain IWC values between 0.1 and 1 g m-3. Comparison of the high IWC mask against results from the Rapidly Developing Thunderstorm (RDT) algorithm applied to the same geostationary SEVIRI data showed that there are similarities and differences with the high IWC mask: the RDT algorithm is very capable of detecting young/new convective cells and areas, whereas the high IWC mask appears to be better capable of detecting more mature and ageing convection as well as cirrus remnants. The lack of detailed understanding of what causes aviation hazards related to high IWC, as well as the lack of clearly defined user requirements, hampers further tuning of the high IWC mask. Future evaluation of the high IWC mask against field campaign data, as well as obtaining user feedback and user requirements from the aviation industry, should provide more information on the performance of the MSG-CPP high IWC mask and contribute to improving the practical use of the high IWC mask.

Mask Industry Assessment: 2011

NASA Astrophysics Data System (ADS)

Chan, Y. David

2011-11-01

A survey supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the tenth in the current series of annual reports. With ongoing industry support, the report has been used as one of the baselines to gain perspective on the technical and business status of the mask and microelectronics industries. It continues to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was essentially the same as the 2005 through 2010 surveys. Questions are grouped into following categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

Mask Industry Assessment: 2010

NASA Astrophysics Data System (ADS)

Hughes, Greg; Chan, David Y.

2010-09-01

A survey created supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the ninth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. It will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was basically the same as the 2005 through 2009 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

Status of EUVL mask development in Europe (Invited Paper)

NASA Astrophysics Data System (ADS)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

Masked translation priming effects with low proficient bilinguals.

PubMed

Dimitropoulou, Maria; Duñabeitia, Jon Andoni; Carreiras, Manuel

2011-02-01

Non-cognate masked translation priming lexical decision studies with unbalanced bilinguals suggest that masked translation priming effects are asymmetric as a function of the translation direction (significant effects only in the dominant [L1] to nondominant [L2] language translation direction). However, in contrast to the predictions of most current accounts of masked translation priming effects, bidirectional effects have recently been reported with a group of low proficient bilinguals Duyck & Warlop 2009 (Experimental Psychology 56:173-179). In a series of masked translation priming lexical decision experiments we examined whether the same pattern of effects would emerge with late and low proficient Greek (L1)-Spanish (L2) bilinguals. Contrary to the results obtained by Duyck and Warlop, and in line with the results found in most studies in the masked priming literature, significant translation priming effects emerged only when the bilinguals performed the task with L1 primes and L2 targets. The existence of the masked translation priming asymmetry with low proficient bilinguals suggests that cross-linguistic automatic lexico-semantic links may be established very early in the process of L2 acquisition. These findings could help to define models of bilingualism that consider L2 proficiency level to be a determining factor.

An in-vitro-in-vivo taste assessment of bitter drug: comparative electronic tongues study.

PubMed

Maniruzzaman, Mohammed; Douroumis, Dennis

2015-01-01

The efficiency of the Astree e-tongue and Taste Sensing system TS5000Z for the evaluation of the taste masking effect of hot melt extruded formulations was investigated in this study. Hot melt extrusion (HME) processing was optimized using Randcastle single screw extruder (USA) to manufacture extrudates with desirable characteristics. Cationic model drug propranolol HCl (PRP) was processed with the anionic polymers - Eudragit L100 (L100) and Eudragit L100-55 (Acryl-EZE). Solid state of the drug in polymer matrices was evaluated by scanning electron microscopy (SEM), differential scanning calorimetry, particle size analysis, Fourier transform infrared (FTIR) and Nuclear magnetic resonance (NMR) analysis. In-vitro taste masking efficiency of the two polymers was performed by using two different e-tongues (Astree e-tongue and TS5000Z). The results obtained from both e-tongues were further compared and contrast to find out the sensor outputs in all formulations. Solid state analysis of the extruded formulations revealed the presence of amorphous PRP. Both e-tongues were able to detect the taste masking variations of the extrudates and were in good agreement with the in-vivo results obtained from a panel of six healthy human volunteers (R(2)  > 0.84). However, each e-tongue sensor demonstrated different sensitivity, suggesting a careful consideration of the experimental findings during melt extrusion, is necessary for the development of taste-masked formulations. Furthermore, FTIR spectroscopy and NMR studies revealed possible drug polymer intermolecular interactions as the mechanism of successful taste masking. HME can effectively be used to manufacture taste-masked extruded formulations, while both e-tongues demonstrated satisfactory taste analysis for the development of taste-masked formulations. © 2014 Royal Pharmaceutical Society.

Ion Beam Etching: Replication of Micro Nano-structured 3D Stencil Masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weber, Patrick; Guibert, Edouard; Mikhailov, Serguei

2009-03-10

Ion beam LIGA allows the etching of 3D nano-structures by direct writing with a nano-sized beam. However, this is a relatively time consuming process. We propose here another approach for etching structures on large surfaces and faster, compared to the direct writing process. This approach consists of replicating 3D structured masks, by scanning an unfocused ion beam. A polymer substrate is placed behind the mask, as in UV photolithography. But the main advantage is that the 3D structure of the mask can be replicated into the polymer. For that purpose, the masks (developped at LMIS1, EPFL) are made of amore » silicon nitride membrane 100 nm thick, on which 3D gold structures up to 200 nm thick, are deposited. The 3D Au structures are made with the nanostencil method, based on successive gold deposition. The IMA institute, from HE-Arc, owns a High Voltage Engineering 1.7 MV Tandetron with both solid and gaseous negative ion sources, able to generate ions from almost every chemical element in a broad range of energies comprised between 400 keV and 6.8 MeV. The beam composition and energy are chosen in such a way, that ions lose a significant fraction of their energy when passing through the thickest regions of the mask. Ions passing through thinner regions of the mask loose a smaller fraction of their energy and etch the polymer with larger thicknesses, allowing a replication of the mask into the polymer. For our trials, we have used a carbon beam with an energy of 500 keV. The beam was focussed to a diameter of 5 mm with solid slits, in order to avoid border effects and thus ensure a homogeneous dose distribution on the beam diameter. The feasibility of this technique has been demonstrated, allowing industrial applications for micro-mould fabrication, micro-fluidics and micro-optics.« less

Pharmaceutical Applications of Ion-Exchange Resins

NASA Astrophysics Data System (ADS)

Elder, David P.

2005-04-01

The historical uses of ion-exchange resins and a summary of the basic chemical principles involved in the ion-exchange process are discussed. Specific applications of ion-exchange resins are provided. The utility of these agents to stabilize drugs are evaluated. Commonly occurring chemical and physical incompatibilities are reviewed. Ion-exchange resins have found applicability as inactive pharmaceutical constituents, particularly as disintegrants (inactive tablet ingredient whose function is to rapidly disrupt the tablet matrix on contact with gastric fluid). One of the more elegant approaches to improving palatability of ionizable drugs is the use of ion-exchange resins as taste-masking agents. The selection, optimization of drug:resin ratio and particle size, together with a review of scaleup of typical manufacturing processes for taste-masked products are provided. Ion-exchange resins have been extensively utilized in oral sustained-release products. The selection, optimization of drug:resin ratio and particle size, together with a summary of commonly occurring commercial sustained-release products are discussed. Ion-exchange resins have also been used in topical products for local application to the skin, including those where drug flux is controlled by a differential electrical current (ionotophoretic delivery). General applicability of ion-exchange resins, including ophthalmic delivery, nasal delivery, use as drugs in their own right (e.g., colestyramine, formerly referred to as cholestyramine), as well as measuring gastrointestinal transit times, are discussed. Finally, pharmaceutical monographs for ion-exchange resins are reviewed.

Auditory Backward Masking Deficits in Children with Reading Disabilities

ERIC Educational Resources Information Center

Montgomery, Christine R.; Morris, Robin D.; Sevcik, Rose A.; Clarkson, Marsha G.

2005-01-01

Studies evaluating temporal auditory processing among individuals with reading and other language deficits have yielded inconsistent findings due to methodological problems (Studdert-Kennedy & Mody, 1995) and sample differences. In the current study, seven auditory masking thresholds were measured in fifty-two 7- to 10-year-old children (26…

Dynamics of normalization underlying masking in human visual cortex.

PubMed

Tsai, Jeffrey J; Wade, Alex R; Norcia, Anthony M

2012-02-22

Stimulus visibility can be reduced by other stimuli that overlap the same region of visual space, a process known as masking. Here we studied the neural mechanisms of masking in humans using source-imaged steady state visual evoked potentials and frequency-domain analysis over a wide range of relative stimulus strengths of test and mask stimuli. Test and mask stimuli were tagged with distinct temporal frequencies and we quantified spectral response components associated with the individual stimuli (self terms) and responses due to interaction between stimuli (intermodulation terms). In early visual cortex, masking alters the self terms in a manner consistent with a reduction of input contrast. We also identify a novel signature of masking: a robust intermodulation term that peaks when the test and mask stimuli have equal contrast and disappears when they are widely different. We fit all of our data simultaneously with family of a divisive gain control models that differed only in their dynamics. Models with either very short or very long temporal integration constants for the gain pool performed worse than a model with an integration time of ∼30 ms. Finally, the absolute magnitudes of the response were controlled by the ratio of the stimulus contrasts, not their absolute values. This contrast-contrast invariance suggests that many neurons in early visual cortex code relative rather than absolute contrast. Together, these results provide a more complete description of masking within the normalization framework of contrast gain control and suggest that contrast normalization accomplishes multiple functional goals.

Mask industry assessment trend analysis

NASA Astrophysics Data System (ADS)

Shelden, Gilbert; Marmillion, Patricia; Hughes, Greg

2008-04-01

Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the sixth in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the 2005 and 2006 surveys. Questions are grouped into eight categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry. Note: the questions covering operating cost factors and equipment utilization were added to the survey only in 2005; therefore, meaningful trend analysis is not available.

Edge detection - Image-plane versus digital processing

NASA Technical Reports Server (NTRS)

Huck, Friedrich O.; Fales, Carl L.; Park, Stephen K.; Triplett, Judith A.

1987-01-01

To optimize edge detection with the familiar Laplacian-of-Gaussian operator, it has become common to implement this operator with a large digital convolution mask followed by some interpolation of the processed data to determine the zero crossings that locate edges. It is generally recognized that this large mask causes substantial blurring of fine detail. It is shown that the spatial detail can be improved by a factor of about four with either the Wiener-Laplacian-of-Gaussian filter or an image-plane processor. The Wiener-Laplacian-of-Gaussian filter minimizes the image-gathering degradations if the scene statistics are at least approximately known and also serves as an interpolator to determine the desired zero crossings directly. The image-plane processor forms the Laplacian-of-Gaussian response by properly combining the optical design of the image-gathering system with a minimal three-by-three lateral-inhibitory processing mask. This approach, which is suggested by Marr's model of early processing in human vision, also reduces data processing by about two orders of magnitude and data transmission by up to an order of magnitude.

Mask characterization for CDU budget breakdown in advanced EUV lithography

NASA Astrophysics Data System (ADS)

Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

2012-11-01

As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget Breakdown per product/process and Litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps to extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Possible disruption of remote viewing by complex weak magnetic fields around the stimulus site and the possibility of accessing real phase space: a pilot study.

PubMed

Koren, S A; Persinger, M A

2002-12-01

In 2002 Persinger, Roll, Tiller, Koren, and Cook considered whether there are physical processes by which recondite information exists within the space and time of objects or events. The stimuli that compose this information might be directly detected within the whole brain without being processed by the typical sensory modalities. We tested the artist Ingo Swann who can reliably draw and describe randomly selected photographs sealed in envelopes in another room. In the present experiment the photographs were immersed continuously in repeated presentations (5 times per sec.) of one of two types of computer-generated complex magnetic field patterns whose intensities were less than 20 nT over most of the area. WINDOWS-generated but not DOS-generated patterns were associated with a marked decrease in Mr. Swann's accuracy. Whereas the DOS software generated exactly the same pattern, WINDOWS software phase-modulated the actual wave form resulting in an infinite bandwidth and complexity. We suggest that information obtained by processes attributed to "paranormal" phenomena have physical correlates that can be masked by weak, infinitely variable magnetic fields.

Model based high NA anamorphic EUV RET

NASA Astrophysics Data System (ADS)

Jiang, Fan; Wiaux, Vincent; Fenger, Germain; Clifford, Chris; Liubich, Vlad; Hendrickx, Eric

2018-03-01

With the announcement of the extension of the Extreme Ultraviolet (EUV) roadmap to a high NA lithography tool that utilizes anamorphic optics design, an investigation of design tradeoffs unique to the imaging of anamorphic lithography tool is shown. An anamorphic optical proximity correction (OPC) solution has been developed that models fully the EUV near field electromagnetic effects and the anamorphic imaging using the Domain Decomposition Method (DDM). Clips of imec representative for the N3 logic node were used to demonstrate the OPC solutions on critical layers that will benefit from the increased contrast at high NA using anamorphic imaging. However, unlike isomorphic case, from wafer perspective, OPC needs to treat x and y differently. In the paper, we show a design trade-off seen unique to Anamorphic EUV, namely that using a mask rule of 48nm (mask scale), approaching current state of the art, limitations are observed in the available correction that can be applied to the mask. The metal pattern has a pitch of 24nm and CD of 12nm. During OPC, the correction of the metal lines oriented vertically are being limited by the mask rule of 12nm 1X. The horizontally oriented lines do not suffer from this mask rule limitation as the correction is allowed to go to 6nm 1X. For this example, the masks rules will need to be more aggressive to allow complete correction, or design rules and wafer processes (wafer rotation) would need to be created that utilize the orientation that can image more aggressive features. When considering VIA or block level correction, aggressive polygon corner to corner designs can be handled with various solutions, including applying a 45 degree chop. Multiple solutions are discussed with the metrics of edge placement error (EPE) and Process Variation Bands (PVBands), together with all the mask constrains. Noted in anamorphic OPC, the 45 degree chop is maintained at the mask level to meet mask manufacturing constraints, but results in skewed angle edge in wafer level correction. In this paper, we used both contact (Via/block) patterns and metal patterns for OPC practice. By comparing the EPE of horizontal and vertical patterns with a fixed mask rule check (MRC), and the PVBand, we focus on the challenges and the solutions of OPC with anamorphic High-NA lens.

Layout optimization of DRAM cells using rigorous simulation model for NTD

NASA Astrophysics Data System (ADS)

Jeon, Jinhyuck; Kim, Shinyoung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Kuechler, Bernd; Zimmermann, Rainer; Muelders, Thomas; Klostermann, Ulrich; Schmoeller, Thomas; Do, Mun-hoe; Choi, Jung-Hoe

2014-03-01

DRAM chip space is mainly determined by the size of the memory cell array patterns which consist of periodic memory cell features and edges of the periodic array. Resolution Enhancement Techniques (RET) are used to optimize the periodic pattern process performance. Computational Lithography such as source mask optimization (SMO) to find the optimal off axis illumination and optical proximity correction (OPC) combined with model based SRAF placement are applied to print patterns on target. For 20nm Memory Cell optimization we see challenges that demand additional tool competence for layout optimization. The first challenge is a memory core pattern of brick-wall type with a k1 of 0.28, so it allows only two spectral beams to interfere. We will show how to analytically derive the only valid geometrically limited source. Another consequence of two-beam interference limitation is a "super stable" core pattern, with the advantage of high depth of focus (DoF) but also low sensitivity to proximity corrections or changes of contact aspect ratio. This makes an array edge correction very difficult. The edge can be the most critical pattern since it forms the transition from the very stable regime of periodic patterns to non-periodic periphery, so it combines the most critical pitch and highest susceptibility to defocus. Above challenge makes the layout correction to a complex optimization task demanding a layout optimization that finds a solution with optimal process stability taking into account DoF, exposure dose latitude (EL), mask error enhancement factor (MEEF) and mask manufacturability constraints. This can only be achieved by simultaneously considering all criteria while placing and sizing SRAFs and main mask features. The second challenge is the use of a negative tone development (NTD) type resist, which has a strong resist effect and is difficult to characterize experimentally due to negative resist profile taper angles that perturb CD at bottom characterization by scanning electron microscope (SEM) measurements. High resist impact and difficult model data acquisition demand for a simulation model that hat is capable of extrapolating reliably beyond its calibration dataset. We use rigorous simulation models to provide that predictive performance. We have discussed the need of a rigorous mask optimization process for DRAM contact cell layout yielding mask layouts that are optimal in process performance, mask manufacturability and accuracy. In this paper, we have shown the step by step process from analytical illumination source derivation, a NTD and application tailored model calibration to layout optimization such as OPC and SRAF placement. Finally the work has been verified with simulation and experimental results on wafer.

Study of shape evaluation for mask and silicon using large field of view

NASA Astrophysics Data System (ADS)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2010-09-01

We have developed a highly integrated method of mask and silicon metrology. The aim of this integration is evaluating the performance of the silicon corresponding to Hotspot on a mask. It can use the mask shape of a large field, besides. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and mask manufacture, and this has a big impact on the semiconductor market that centers on the mask business. As an optimal solution to these issues, we provide a DFM solution that extracts 2-dimensional data for a more realistic and error-free simulation by reproducing accurately the contour of the actual mask, in addition to the simulation results from the mask data. On the other hand, there is roughness in the silicon form made from a mass-production line. Moreover, there is variation in the silicon form. For this reason, quantification of silicon form is important, in order to estimate the performance of a pattern. In order to quantify, the same form is equalized in two dimensions. And the method of evaluating based on the form is popular. In this study, we conducted experiments for averaging method of the pattern (Measurement Based Contouring) as two-dimensional mask and silicon evaluation technique. That is, observation of the identical position of a mask and a silicon was considered. The result proved its detection accuracy and reliability of variability on two-dimensional pattern (mask and silicon) and is adaptable to following fields of mask quality management. •Discrimination of nuisance defects for fine pattern. •Determination of two-dimensional variability of pattern. •Verification of the performance of the pattern of various kinds of Hotspots. In this report, we introduce the experimental results and the application. We expect that the mask measurement and the shape control on mask production will make a huge contribution to mask yield-enhancement and that the DFM solution for mask quality control process will become much more important technology than ever. It is very important to observe the form of the same location of Design, Mask, and Silicon in such a viewpoint. And we report it about algorithm of the image composition in Large Field.

Programmable masks for optical information processing

NASA Technical Reports Server (NTRS)

Goebel, J. H.; Matsumoto, T.; Mina, C.; Welch, J.

1984-01-01

Research in progress at NASA Ames Research Center on programmable masks is discussed in this paper. One type is a large area format liquid crystal mask intended for binary optical computation problems. To date, an on-off contrast ratio of 500:1 has been achieved at a switching rate of 1 Hz. With a 32 x 32 format, a ratio 10 to the 4th power:1 is desirable. The switching contrast is entirely dependent on the polarized quality; therefore, it is believed that 10 to the 4th power:1 in transmission is possible. Larger format masks are under development. An application to Hadamard transform polarized imagery at wavelengths of 1.0 to 2.0 micrometers, which is competitive with the best monolithic infrared detector arrays, is discussed.

Coatings on reflective mask substrates

DOEpatents

Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

2002-01-01

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Effective formation method for an aspherical microlens array based on an aperiodic moving mask during exposure.

PubMed

Shi, Lifang; Du, Chunlei; Dong, Xiaochun; Deng, Qiling; Luo, Xiangang

2007-12-01

An aperiodic mask design method for fabricating a microlens array with an aspherical profile is proposed. The nonlinear relationship between exposure doses and lens profile is considered, and the select criteria of quantization interval and fabrication range of the method are given. The mask function of a quadrangle microlens array with a hyperboloid profile used in the infrared was constructed by using this method. The microlens array can be effectively fabricated during a one time exposure process using the mask. Reactive ion etching was carried out to transfer the structure into the substrate of germanium. The measurement results indicate that the roughness is less than 10 nm (pv), and the profile error is less than 40 nm (rms).

X-ray mask and method for providing same

DOEpatents

Morales, Alfredo M [Pleasanton, CA; Skala, Dawn M [Fremont, CA

2004-09-28

The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

X-ray mask and method for providing same

DOEpatents

Morales, Alfredo M.; Skala, Dawn M.

2002-01-01

The present invention describes a method for fabricating an x-ray mask tool which can achieve pattern features having lateral dimension of less than 1 micron. The process uses a thin photoresist and a standard lithographic mask to transfer an trace image pattern in the surface of a silicon wafer by exposing and developing the resist. The exposed portion of the silicon substrate is then anisotropically etched to provide an etched image of the trace image pattern consisting of a series of channels in the silicon having a high depth-to-width aspect ratio. These channels are then filled by depositing a metal such as gold to provide an inverse image of the trace image and thereby providing a robust x-ray mask tool.

LCD real-time mask technique for fabrication of arbitrarily shaped microstructure

NASA Astrophysics Data System (ADS)

Peng, Qinjun; Guo, Yongkang; Chen, Bo; Du, Jinglei; Xiang, Jinshan; Cui, Zheng

2002-04-01

A new technique to fabricate arbitrarily shaped microstructures by using LCD (liquid crystal display) real- time mask is reported in this paper. Its principle and design method are explained. Based on partial coherent imaging theory, the process to fabricate micro-axicon array and zigzag grating has been simulated. The experiment using a color LCD as real-time mask has been set up. Micro-axicon array and zigzag grating has been fabricated by the LCD real-time mask technique. The 3D surface relief structures were made on pan chromatic silver-halide sensitized gelatin (Kodak-131) with trypsinase etching. The pitch size of zigzag grating is 46.26micrometers . The caliber of axicon is 118.7micrometers , and the etching depth is 1.332micrometers .

Technology Insertion Engineering Services Masking Process Evaluation Task Order No. 7. (Phase 1). Revision B

DTIC Science & Technology

1989-10-06

spent pumice cleaning. All parts can be pumice cleaned faster by using the method described in Quick Fix Plan paragraph 6.0. Soaking the scrubbed masked...times were run at an unusuall fast pace. For two other days workers were observed masking parts and by excluding the time spent talking and working on...stop-off Lacquer, MICCROSTOP REDUCER is recom. mended. Also, a shot soak in caustic cleaner, both at 212’ F., will break the adhesion and the coating is

Masked areas in shear peak statistics. A forward modeling approach

DOE PAGES

Bard, D.; Kratochvil, J. M.; Dawson, W.

2016-03-09

The statistics of shear peaks have been shown to provide valuable cosmological information beyond the power spectrum, and will be an important constraint of models of cosmology in forthcoming astronomical surveys. Surveys include masked areas due to bright stars, bad pixels etc., which must be accounted for in producing constraints on cosmology from shear maps. We advocate a forward-modeling approach, where the impacts of masking and other survey artifacts are accounted for in the theoretical prediction of cosmological parameters, rather than correcting survey data to remove them. We use masks based on the Deep Lens Survey, and explore the impactmore » of up to 37% of the survey area being masked on LSST and DES-scale surveys. By reconstructing maps of aperture mass the masking effect is smoothed out, resulting in up to 14% smaller statistical uncertainties compared to simply reducing the survey area by the masked area. We show that, even in the presence of large survey masks, the bias in cosmological parameter estimation produced in the forward-modeling process is ≈1%, dominated by bias caused by limited simulation volume. We also explore how this potential bias scales with survey area and evaluate how much small survey areas are impacted by the differences in cosmological structure in the data and simulated volumes, due to cosmic variance.« less

MASKED AREAS IN SHEAR PEAK STATISTICS: A FORWARD MODELING APPROACH

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bard, D.; Kratochvil, J. M.; Dawson, W., E-mail: djbard@slac.stanford.edu

2016-03-10

The statistics of shear peaks have been shown to provide valuable cosmological information beyond the power spectrum, and will be an important constraint of models of cosmology in forthcoming astronomical surveys. Surveys include masked areas due to bright stars, bad pixels etc., which must be accounted for in producing constraints on cosmology from shear maps. We advocate a forward-modeling approach, where the impacts of masking and other survey artifacts are accounted for in the theoretical prediction of cosmological parameters, rather than correcting survey data to remove them. We use masks based on the Deep Lens Survey, and explore the impactmore » of up to 37% of the survey area being masked on LSST and DES-scale surveys. By reconstructing maps of aperture mass the masking effect is smoothed out, resulting in up to 14% smaller statistical uncertainties compared to simply reducing the survey area by the masked area. We show that, even in the presence of large survey masks, the bias in cosmological parameter estimation produced in the forward-modeling process is ≈1%, dominated by bias caused by limited simulation volume. We also explore how this potential bias scales with survey area and evaluate how much small survey areas are impacted by the differences in cosmological structure in the data and simulated volumes, due to cosmic variance.« less

Applying Triple-Matrix Masking for Privacy Preserving Data Collection and Sharing in HIV Studies.

PubMed

Pei, Qinglin; Chen, Shigang; Xiao, Yao; Wu, Samuel S

2016-01-01

Many HIV research projects are plagued by the high missing rate of selfreported information during data collection. Also, due to the sensitive nature of the HIV research data, privacy protection is always a concern for data sharing in HIV studies. This paper applies a data masking approach, called triple-matrix masking [1], to the context of HIV research for ensuring privacy protection during the process of data collection and data sharing. Using a set of generated HIV patient data, we show step by step how the data are randomly transformed (masked) before leaving the patients' individual data collection device (which ensures that nobody sees the actual data) and how the masked data are further transformed by a masking service provider and a data collector. We demonstrate that the masked data retain statistical utility of the original data, yielding the exactly same inference results in the planned logistic regression on the effect of age on the adherence to antiretroviral therapy and in the Cox proportional hazard model for the age effect on time to viral load suppression. Privacy-preserving data collection method may help resolve the privacy protection issue in HIV research. The individual sensitive data can be completely hidden while the same inference results can still be obtained from the masked data, with the use of common statistical analysis methods.

Identification of pixels with stray light and cloud shadow contaminations in the satellite ocean color data processing.

PubMed

Jiang, Lide; Wang, Menghua

2013-09-20

A new flag/masking scheme has been developed for identifying stray light and cloud shadow pixels that significantly impact the quality of satellite-derived ocean color products. Various case studies have been carried out to evaluate the performance of the new cloud contamination flag/masking scheme on ocean color products derived from the Visible Infrared Imaging Radiometer Suite (VIIRS) onboard the Suomi National Polar-orbiting Partnership (SNPP). These include direct visual assessments, detailed quantitative case studies, objective statistic analyses, and global image examinations and comparisons. The National Oceanic and Atmospheric Administration (NOAA) Multisensor Level-1 to Level-2 (NOAA-MSL12) ocean color data processing system has been used in the study. The new stray light and cloud shadow identification method has been shown to outperform the current stray light flag in both valid data coverage and data quality of satellite-derived ocean color products. In addition, some cloud-related flags from the official VIIRS-SNPP data processing software, i.e., the Interface Data Processing System (IDPS), have been assessed. Although the data quality with the IDPS flags is comparable to that of the new flag implemented in the NOAA-MSL12 ocean color data processing system, the valid data coverage from the IDPS is significantly less than that from the NOAA-MSL12 using the new stray light and cloud shadow flag method. Thus, the IDPS flag/masking algorithms need to be refined and modified to reduce the pixel loss, e.g., the proposed new cloud contamination flag/masking can be implemented in IDPS VIIRS ocean color data processing.

Don't kill canaries! Introducing a new test device to assess the electrostatic risk potential to photomasks

NASA Astrophysics Data System (ADS)

Sebald, Thomas

2008-10-01

Electrostatic protection is an issue for all masks, whether during mask production, shipping, storage, handling or inspection and exposure. Up to now, only manual electrostatic field measurements, or expensive and elaborate analyses with Canary reticles have given hints about the risks of pattern damage by ESD events. A new test device is being introduced, which consists of electrostatic field sensors, integrated INSIDE a closed fused quartz housing which has the outside dimensions of a 6 inch mask. This device can be handled and used like a normal 6 inch reticle. It can be handled and processed while recording the electrostatic charges on the chrome patterns created by friction or field induction just as a reticle would "see" during normal processing.

[Oxygenation: the impact of face mask coupling.].

PubMed

Gregori, Waldemar Montoya de; Mathias, Lígia Andrade da Silva Telles; Piccinini Filho, Luiz; Pena, Ernesto Leonardo de Carpio; Vicuna, Aníbal Heberto Mora; Vieira, Joaquim Edson

2005-10-01

Different oxygenation techniques aim at promoting denitrogenation before apnea during induction. The main reason why CIO2 = 100% cannot be reached is the lack of adequate face mask coupling, allowing the entry of room air. Although anesthesiologists know this principle, not all of them apply it correctly, facilitating the entry of air in fresh gases flow and consequently diluting CIO2. This prospective study was performed to comparatively evaluate, through the variation of oxygen expired concentration (CEO2), the efficacy of the oxygenation technique via face mask in the conditions routinely used by anesthesiologists, simulating situations of progressive leaks. Oxygen end-tidal concentrations of 15 volunteers, physical status ASA I, were studied with 8 deep breaths (vital capacity) in 60 s with fresh gas flow of 10 L.min-1. The face mask was: tightly fitted with 100% CIO2 (Tf100) or varying from 50% to 90%, (Tf50, Tf60, Tf70, Tf80, Tf90); gravity-coupled to face and 100% CIO2 (Grav) and moved 1 cm away from face with 100% CIO2 (Aw). CEO2 was recorded at 10 s intervals. P < 0.05 was considered statistically significant. CEO2 has increased for all groups (p < 0.001), but only Tf100 reached values close to ideal (82.20 - 87). Comparing mean CEO2 of Grav and Tf100 at the end of 60s, (82.20 and 65.87) there was a difference of approximately 20% between both techniques, since gravity-coupled mask only did not provide adequate oxygenation. There were no significant differences between groups Tf70 and Grav (65.87 and 62.67) in all studied moments, suggesting that the latter simulates a 70% CIO2 at 60 s. Mean Aw group CEO2 increased to 47.20 at 60s showing that this technique may be associated to unacceptable risk of hypoxemia. All situations of face mask coupling gradually increased CEO2, although with decreased oxygenation efficacy due to situations of face mask malposition. This study has shown the need for attention during oxygenation, using well coupled face mask and eliminating normal practices of moved away or gravity-coupled masks.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

NASA Astrophysics Data System (ADS)

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

2015-08-01

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02786a

Poisson-Spot Intensity Reduction with a Partially-Transparent Petal-Shaped Optical Mask

NASA Technical Reports Server (NTRS)

Shiri, Shahram; Wasylkiwskyj, Wasyl

2013-01-01

The presence of Poisson's spot, also known as the spot of Arago, formed along the optical axis in the geometrical shadow behind an obstruction, has been known since the 18th century. The presence of this spot can best be described as the consequence of constructive interference of light waves diffracted on the edge of the obstruction where its central position can··be determined by the symmetry of the object More recently, the elimination of this spot has received attention in the fields of particle physics, high-energy lasers, astronomy and lithography. In this paper, we introduce a novel, partially transparent petaled mask shape that suppresses the bright spot by up to 10 orders of magnitude in intensity, with powerful applications to many of the above fields. The optimization technique formulated in this design can identify mask shapes having partial transparency only near the petal tips.

Physical Approaches to Masking Bitter Taste: Lessons from Food and Pharmaceuticals

PubMed Central

Hayes, John E.

2016-01-01

Many drugs and desirable phytochemicals are bitter, and bitter tastes are aversive. Food and pharmaceutical manufacturers share a common need for bitterness-masking strategies that allow them to deliver useful quantities of the active compounds in an acceptable form and in this review we compare and contrast the challenges and approaches by researchers in both fields. We focus on physical approaches, i.e., micro- or nano-structures to bind bitter compounds in the mouth, yet break down to allow release after they are swallowed. In all of these methods, the assumption is the degree of bitterness suppression depends on the concentration of bitterant in the saliva and hence the proportion that is bound. Surprisingly, this hypothesis has only rarely been fully tested using a combination of adequate human sensory trials and measurements of binding. This is especially true in pharmaceutical systems, perhaps due to the greater experimental challenges in sensory analysis of drugs. PMID:25205460

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

Development of a robust reverse tone pattern transfer process

NASA Astrophysics Data System (ADS)

Khusnatdinov, Niyaz; Doyle, Gary; Resnick, Douglas J.; Ye, Zhengmao; LaBrake, Dwayne; Milligan, Brennan; Alokozai, Fred; Chen, Jerry

2017-03-01

Pattern transfer is critical to any lithographic technology, and plays a significant role in defining the critical features in a device layer. As both the memory and logic roadmaps continue to advance, greater importance is placed on the scheme used to do the etching. For many critical layers, a need has developed which requires a multilayer stack to be defined in order to perform the pattern transfer. There are many cases however, where this standard approach does not provide the best results in terms of critical dimension (CD) fidelity and CD uniformity. As an example, when defining a contact pattern, it may be advantageous to apply a bright field mask (in order to maximize the normalized inverse log slope (NILS)) over the more conventional dark field mask. The result of applying the bright field mask in combination with positive imaging resist is to define an array of pillar patterns, which then must be converted back to holes before etching the underlying dielectric material. There have been several publications on tone reversal that is introduced in the resist process itself, but often an etch transfer process is applied to reverse the pattern tone. The purpose of this paper is to describe the use of a three layer reverse tone process (RTP) that is capable of reversing the tone of every printed feature type. The process utilizes a resist pattern, a hardmask layer and an additional protection layer. The three layer approach overcomes issues encountered when using a single masking layer. Successful tone reversal was demonstrated both on 300mm wafers and imprint masks, including the largest features in the pattern, with dimensions as great as 60 microns. Initial in-field CD uniformity is promising. CDs shifted by about 2.6nm and no change was observed in either LER or LWR. Follow-up work is required to statistically qualify in-field CDU and also understand both across wafer uniformity and feature linearity.

Splendidly blended: a machine learning set up for CDU control

NASA Astrophysics Data System (ADS)

Utzny, Clemens

2017-06-01

As the concepts of machine learning and artificial intelligence continue to grow in importance in the context of internet related applications it is still in its infancy when it comes to process control within the semiconductor industry. Especially the branch of mask manufacturing presents a challenge to the concepts of machine learning since the business process intrinsically induces pronounced product variability on the background of small plate numbers. In this paper we present the architectural set up of a machine learning algorithm which successfully deals with the demands and pitfalls of mask manufacturing. A detailed motivation of this basic set up followed by an analysis of its statistical properties is given. The machine learning set up for mask manufacturing involves two learning steps: an initial step which identifies and classifies the basic global CD patterns of a process. These results form the basis for the extraction of an optimized training set via balanced sampling. A second learning step uses this training set to obtain the local as well as global CD relationships induced by the manufacturing process. Using two production motivated examples we show how this approach is flexible and powerful enough to deal with the exacting demands of mask manufacturing. In one example we show how dedicated covariates can be used in conjunction with increased spatial resolution of the CD map model in order to deal with pathological CD effects at the mask boundary. The other example shows how the model set up enables strategies for dealing tool specific CD signature differences. In this case the balanced sampling enables a process control scheme which allows usage of the full tool park within the specified tight tolerance budget. Overall, this paper shows that the current rapid developments off the machine learning algorithms can be successfully used within the context of semiconductor manufacturing.

Mitigation and control of the overcuring effect in mask projection micro-stereolithography

NASA Astrophysics Data System (ADS)

O'Neill, Paul F.; Kent, Nigel; Brabazon, Dermot

2017-10-01

Mask Projection micro-Stereolithography (MPμSL) is an additive manufacturing technique capable of producing solid parts with micron-scale resolution from a vat of photocurable liquid polymer resin. Although the physical mechanism remains the same, the process differs from traditional laser-galvanometer based stereolithography (SL) in its use of a dynamic mask UV projector, or digital light processor (DLP), which cures each location within each 3D layer at the same time. One area where MPµSL has garnered considerable attention is in the field of microfluidics and Lab-on-a-Chip, where complex multistep microfabrication techniques adopted from the semiconductor industry are still widely used, and where MPµSL offers the ability to fabricate completely encapsulated fluidic channels in a single step and at low cost [1-3]. However, a significant obstacle exists in the prevention of channel blockage due to overcuring of the polymer resin [4, 5]. Overcuring can be attributed to the so-called `back side effect' [2] which occurs during the build process as light from successive layers penetrates into the resin to a depth greater than the layer thickness. This effect is most prevalent in channels or features oriented horizontally (in a parallel plane to that of the build platform). Currently there are two main approaches in controlling the cure depth; 1. the chemical approach, which involves doping the resin material with a chemical light absorber [6-8]; and 2. by improving the system's hardware and optical elements to improve the homogeneity of the light dosage and control the cure depth [9]. Here we investigate a third approach through modification of the 3D CAD file prior to printing to mitigate for UV light leakage from successive build layers. Although used here in conjunction with the MPμSL technique, this approach can be applied to a range of SL techniques to improve printer resolution and enable production of internal features with higher dimensional accuracy.

Orientation masking and cross-orientation suppression (XOS): implications for estimates of filter bandwidth.

PubMed

Meese, Tim S; Holmes, David J

2010-10-01

Most contemporary models of spatial vision include a cross-oriented route to suppression (masking from a broadly tuned inhibitory pool), which is most potent at low spatial and high temporal frequencies (T. S. Meese & D. J. Holmes, 2007). The influence of this pathway can elevate orientation-masking functions without exciting the target mechanism, and because early psychophysical estimates of filter bandwidth did not accommodate this, it is likely that they have been overestimated for this corner of stimulus space. Here we show that a transient 40% contrast mask causes substantial binocular threshold elevation for a transient vertical target, and this declines from a mask orientation of 0° to about 40° (indicating tuning), and then more gently to 90°, where it remains at a factor of ∼4. We also confirm that cross-orientation masking is diminished or abolished at high spatial frequencies and for sustained temporal modulation. We fitted a simple model of pedestal masking and cross-orientation suppression (XOS) to our data and those of G. C. Phillips and H. R. Wilson (1984) and found the dependency of orientation bandwidth on spatial frequency to be much less than previously supposed. An extension of our linear spatial pooling model of contrast gain control and dilution masking (T. S. Meese & R. J. Summers, 2007) is also shown to be consistent with our results using filter bandwidths of ±20°. Both models include tightly and broadly tuned components of divisive suppression. More generally, because XOS and/or dilution masking can affect the shape of orientation-masking curves, we caution that variations in bandwidth estimates might reflect variations in processes that have nothing to do with filter bandwidth.

The Effect of Otitis Media with Effusion on the Masking-Level Difference and the Auditory Brainstem Response.

ERIC Educational Resources Information Center

Hall, Joseph W.; Grose, John H.

1993-01-01

This study of 14 children (ages 5-9) with a history of otitis media with effusion found that subjects had significantly reduced masking-level differences (MLD) compared to controls. Results suggest that the reduction in MLD may be related to abnormal brainstem processing. (Author/JDD)

Mechanisms of Masked Priming: A Meta-Analysis

ERIC Educational Resources Information Center

Van den Bussche, Eva; Van den Noortgate, Wim; Reynvoet, Bert

2009-01-01

The extent to which unconscious information can influence behavior has been a topic of considerable debate throughout the history of psychology. A frequently used method for studying subliminal processing is the masked priming paradigm. The authors focused on studies in which this paradigm was used. Their aim was twofold: first, to assess the…

Inverse Target- and Cue-Priming Effects of Masked Stimuli

ERIC Educational Resources Information Center

Mattler, Uwe

2007-01-01

The processing of a visual target that follows a briefly presented prime stimulus can be facilitated if prime and target stimuli are similar. In contrast to these positive priming effects, inverse priming effects (or negative compatibility effects) have been found when a mask follows prime stimuli before the target stimulus is presented: Responses…

Comodulation Masking Release (CMR) in Children and the Influence of Reading Status

ERIC Educational Resources Information Center

Zettler, Cynthia M.; Sevcik, Rose A.; Morris, Robin D.; Clarkson, Marsha G.

2008-01-01

Purpose: Research suggests that children with reading disabilities (RD) have difficulty processing temporal and spectral components of sounds. Comodulation masking release (CMR) measures a listener's ability to use temporal and spectral information in noise to identify a signal. The purpose of this study was to determine whether children with RD…

Photolithography-free laser-patterned HF acid-resistant chromium-polyimide mask for rapid fabrication of microfluidic systems in glass

NASA Astrophysics Data System (ADS)

Zamuruyev, Konstantin O.; Zrodnikov, Yuriy; Davis, Cristina E.

2017-01-01

Excellent chemical and physical properties of glass, over a range of operating conditions, make it a preferred material for chemical detection systems in analytical chemistry, biology, and the environmental sciences. However, it is often compromised with SU8, PDMS, or Parylene materials due to the sophisticated mask preparation requirements for wet etching of glass. Here, we report our efforts toward developing a photolithography-free laser-patterned hydrofluoric acid-resistant chromium-polyimide tape mask for rapid prototyping of microfluidic systems in glass. The patterns are defined in masking layer with a diode-pumped solid-state laser. Minimum feature size is limited to the diameter of the laser beam, 30 µm minimum spacing between features is limited by the thermal shrinkage and adhesive contact of the polyimide tape to 40 µm. The patterned glass substrates are etched in 49% hydrofluoric acid at ambient temperature with soft agitation (in time increments, up to 60 min duration). In spite of the simplicity, our method demonstrates comparable results to the other current more sophisticated masking methods in terms of the etched depth (up to 300 µm in borosilicate glass), feature under etch ratio in isotropic etch (~1.36), and low mask hole density. The method demonstrates high yield and reliability. To our knowledge, this method is the first proposed technique for rapid prototyping of microfluidic systems in glass with such high performance parameters. The proposed method of fabrication can potentially be implemented in research institutions without access to a standard clean-room facility.

Vector wavefront propagation modeling for the TPF coronagraph

NASA Astrophysics Data System (ADS)

Lieber, Michael D.; Neureuther, Andrew R.; Ceperley, Dan; Kasdin, N. Jeremy; Ter-Gabrielyan, Nikolay

2004-10-01

The TPF mission to search for exo-solar planets is extremely challenging both technically and from a performance modeling perspective. For the visible light coronagraph approach, the requirements for 1e10 rejection of star light to planet signal has not yet been achieved in laboratory testing and full-scale testing on the ground has many more obstacles and may not be possible. Therefore, end-to-end performance modeling will be relied upon to fully predict performance. One of the key technologies developed for achieving the rejection ratios uses shaped pupil masks to selectively cancel starlight in planet search regions by taking advantage of diffraction. Modeling results published to date have been based upon scalar wavefront propagation theory to compute the residual star and planet images. This ignores the 3D structure of the mask and the interaction of light with matter. In this paper we discuss previous work with a system model of the TPF coronagraph and propose an approach for coupling in a vector propagation model using the Finite Difference Time Domain (FDTD) method. This method, implemented in a software package called TEMPEST, allows us to propagate wavefronts through a mask structure to an integrated system model to explore the vector propagation aspects of the problem. We can then do rigorous mask scatter modeling to understand the effects of real physical mask structures on the magnitude, phase, polarization, and wavelength dependence of the transmitted light near edges. Shaped mask technology is reviewed, and computational aspects and interface issues to a TPF integrated system model are also discussed.

Small effects of smoking on visual spatiotemporal processing.

PubMed

Kunchulia, Marina; Pilz, Karin S; Herzog, Michael H

2014-12-04

Nicotine is an important stimulant that is involved in modulating many neuronal processes, including those related to vision. Nicotine is also thought to play a key role in schizophrenia: A genetic variation of the cholinergic nicotine receptor gene, alpha-7 subunit (CHRNA7) has been shown to be associated with stronger backward masking deficits in schizophrenic patients. In this study, we tested visual backward masking in healthy smokers and non-smokers to further understand the effects of nicotine on spatiotemporal vision. In the first study, we tested 48 participants, a group of non-smokers (n = 12) and three groups of regular smokers that were either nicotine deprived (n = 12), non-deprived (n = 12) or deprived but were allowed to smoke a cigarette directly before the start of the experiment (n = 12). Performance was similar across groups, except for some small negative effects in nicotine-deprived participants. In the second study, we compared backward masking performance between regular smokers and non-smokers for older (n = 37, 13 smokers) and younger (n = 67, 21 smokers) adults. Older adults performed generally worse than younger adults but there were no significant differences in performance between smokers and non-smokers. Taken together, these findings indicate that nicotine has no long-term negative effects on visual spatiotemporal processing as determined by visual backward masking.

Dysphoria and somatization in Iranian culture.

PubMed Central

Pliskin, K L

1992-01-01

Iranians express dysphoria through an undifferentiated term called narahati, meaning depressed, ill at ease, nervous, inconvenienced, or anxious. People try masking this emotion or express it in specific ways nonverbally, such as sulking or not eating. Two other dysphoric affects, sadness and anger, are not masked. Because of the social conception of persons being emotionally sensitive, the expression of narahati is guarded: expressing it not only could show that one is socially vulnerable, it could also make another sensitive empathic person narahat. The body is also sensitive, but to the physical world. Physical health is maintained by balancing a diet of "hot" and "cold" foods and avoiding exposure to cold and moisture. With the social and cultural problems brought on by revolution, war, immigration, and accommodation to a new society, Iranian refugees experience changes in family, role, status, finances, language, and other sociocultural ways of being that cause them to feel narahat and to express it verbally, nonverbally, or through somatization. Understanding Iranian conceptions of emotional and physical sensitivity will help clinicians in treating Iranian patients. PMID:1413773

Automatic classification of blank substrate defects

NASA Astrophysics Data System (ADS)

Boettiger, Tom; Buck, Peter; Paninjath, Sankaranarayanan; Pereira, Mark; Ronald, Rob; Rost, Dan; Samir, Bhamidipati

2014-10-01

Mask preparation stages are crucial in mask manufacturing, since this mask is to later act as a template for considerable number of dies on wafer. Defects on the initial blank substrate, and subsequent cleaned and coated substrates, can have a profound impact on the usability of the finished mask. This emphasizes the need for early and accurate identification of blank substrate defects and the risk they pose to the patterned reticle. While Automatic Defect Classification (ADC) is a well-developed technology for inspection and analysis of defects on patterned wafers and masks in the semiconductors industry, ADC for mask blanks is still in the early stages of adoption and development. Calibre ADC is a powerful analysis tool for fast, accurate, consistent and automatic classification of defects on mask blanks. Accurate, automated classification of mask blanks leads to better usability of blanks by enabling defect avoidance technologies during mask writing. Detailed information on blank defects can help to select appropriate job-decks to be written on the mask by defect avoidance tools [1][4][5]. Smart algorithms separate critical defects from the potentially large number of non-critical defects or false defects detected at various stages during mask blank preparation. Mechanisms used by Calibre ADC to identify and characterize defects include defect location and size, signal polarity (dark, bright) in both transmitted and reflected review images, distinguishing defect signals from background noise in defect images. The Calibre ADC engine then uses a decision tree to translate this information into a defect classification code. Using this automated process improves classification accuracy, repeatability and speed, while avoiding the subjectivity of human judgment compared to the alternative of manual defect classification by trained personnel [2]. This paper focuses on the results from the evaluation of Automatic Defect Classification (ADC) product at MP Mask Technology Center (MPMask). The Calibre ADC tool was qualified on production mask blanks against the manual classification. The classification accuracy of ADC is greater than 95% for critical defects with an overall accuracy of 90%. The sensitivity to weak defect signals and locating the defect in the images is a challenge we are resolving. The performance of the tool has been demonstrated on multiple mask types and is ready for deployment in full volume mask manufacturing production flow. Implementation of Calibre ADC is estimated to reduce the misclassification of critical defects by 60-80%.

Process For Patterning Dispenser-Cathode Surfaces

NASA Technical Reports Server (NTRS)

Garner, Charles E.; Deininger, William D.

1989-01-01

Several microfabrication techniques combined into process cutting slots 100 micrometer long and 1 to 5 micrometer wide into tungsten dispenser cathodes for traveling-wave tubes. Patterned photoresist serves as mask for etching underlying aluminum. Chemically-assisted ion-beam etching with chlorine removes exposed parts of aluminum layer. Etching with fluorine or chlorine trifluoride removes tungsten not masked by aluminum layer. Slots enable more-uniform low-work function coating dispensed to electron-emitting surface. Emission of electrons therefore becomes more uniform over cathode surface.

Double exposure using 193nm negative tone photoresist

NASA Astrophysics Data System (ADS)

Kim, Ryoung-han; Wallow, Tom; Kye, Jongwook; Levinson, Harry J.; White, Dave

2007-03-01

Double exposure is one of the promising methods for extending lithographic patterning into the low k I regime. In this paper, we demonstrate double patterning of k 1-effective=0.25 with improved process window using a negative resist. Negative resist (TOK N- series) in combination with a bright field mask is proven to provide a large process window in generating 1:3 = trench:line resist features. By incorporating two etch transfer steps into the hard mask material, frequency doubled patterns could be obtained.

Sub-Optical Lithography With Nanometer Definition Masks

NASA Technical Reports Server (NTRS)

Hartley, Frank T.; Malek, Chantal Khan; Neogi, Jayant

2000-01-01

Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

Disposable surgical face masks for preventing surgical wound infection in clean surgery.

PubMed

Vincent, Marina; Edwards, Peggy

2016-04-26

Surgical face masks were originally developed to contain and filter droplets containing microorganisms expelled from the mouth and nasopharynx of healthcare workers during surgery, thereby providing protection for the patient. However, there are several ways in which surgical face masks could potentially contribute to contamination of the surgical wound, e.g. by incorrect wear or by leaking air from the side of the mask due to poor string tension. To determine whether the wearing of disposable surgical face masks by the surgical team during clean surgery reduces postoperative surgical wound infection. In December 2015, for this seventh update, we searched: The Cochrane Wounds Specialised Register; The Cochrane Central Register of Controlled Trials; Ovid MEDLINE; Ovid MEDLINE (In-Process & Other Non-Indexed Citations); Ovid EMBASE and EBSCO CINAHL. We also searched the bibliographies of all retrieved and relevant publications. There were no restrictions with respect to language, date of publication or study setting. Randomised controlled trials (RCTs) and quasi-randomised controlled trials comparing the use of disposable surgical masks with the use of no mask. Two review authors extracted data independently. We included three trials, involving a total of 2106 participants. There was no statistically significant difference in infection rates between the masked and unmasked group in any of the trials. We identified no new trials for this latest update. From the limited results it is unclear whether the wearing of surgical face masks by members of the surgical team has any impact on surgical wound infection rates for patients undergoing clean surgery.

Modeling high-efficiency extreme ultraviolet etched multilayer phase-shift masks

NASA Astrophysics Data System (ADS)

Sherwin, Stuart; Neureuther, Andrew; Naulleau, Patrick

2017-10-01

Achieving high-throughput extreme ultraviolet (EUV) patterning remains a major challenge due to low source power; phase-shift masks can help solve this challenge for dense features near the resolution limit by creating brighter images than traditional absorber masks when illuminated with the same source power. We explore applications of etched multilayer phase-shift masks for EUV lithography, both in the current-generation 0.33 NA and next-generation 0.55 NA systems. We derive analytic formulas for the thin-mask throughput gains, which are 2.42× for lines and spaces and 5.86× for contacts compared with an absorber mask with dipole and quadrupole illumination, respectively. Using rigorous finite-difference time-domain simulations, we quantify variations in these gains by pitch and orientation, finding 87% to 113% of the thin-mask value for lines and spaces and a 91% to 99% for contacts. We introduce an edge placement error metric, which accounts for CD errors, relative feature motion, and telecentricity errors, and use this metric both to optimize mask designs for individual features and to explore which features can be printed on the same mask. Furthermore, we find that although partial coherence shrinks the process window, at an achievable sigma of 0.2 we obtain a depth of focus of 340 nm and an exposure latitude of 39.2%, suggesting that partial coherence will not limit the feasibility of this technology. Finally, we show that many problems such as sensitivity to etch uniformity can be greatly mitigated using a central obscuration in the imaging pupil.

Differential effect of visual masking in perceptual categorization.

PubMed

Hélie, Sébastien; Cousineau, Denis

2015-06-01

This article explores the visual information used to categorize stimuli drawn from a common stimulus space into verbal and nonverbal categories using 2 experiments. Experiment 1 explores the effect of target duration on verbal and nonverbal categorization using backward masking to interrupt visual processing. With categories equated for difficulty for long and short target durations, intermediate target duration shows an advantage for verbal categorization over nonverbal categorization. Experiment 2 tests whether the results of Experiment 1 can be explained by shorter target duration resulting in a smaller signal-to-noise ratio of the categorization stimulus. To test for this possibility, Experiment 2 used integration masking with the same stimuli, categories, and masks as Experiment 1 with a varying level of mask opacity. As predicted, low mask opacity yielded similar results to long target duration while high mask opacity yielded similar results to short target duration. Importantly, intermediate mask opacity produced an advantage for verbal categorization over nonverbal categorization, similar to intermediate target duration. These results suggest that verbal and nonverbal categorization are affected differently by manipulations affecting the signal-to-noise ratio of the stimulus, consistent with multiple-system theories of categorizations. The results further suggest that verbal categorization may be more digital (and more robust to low signal-to-noise ratio) while the information used in nonverbal categorization may be more analog (and less robust to lower signal-to-noise ratio). This article concludes with a discussion of how these new results affect the use of masking in perceptual categorization and multiple-system theories of perceptual category learning. (c) 2015 APA, all rights reserved).

The Influence of Linguistic Proficiency on Masked Text Recognition Performance in Adults With and Without Congenital Hearing Impairment.

PubMed

Huysmans, Elke; Bolk, Elske; Zekveld, Adriana A; Festen, Joost M; de Groot, Annette M B; Goverts, S Theo

2016-01-01

The authors first examined the influence of moderate to severe congenital hearing impairment (CHI) on the correctness of samples of elicited spoken language. Then, the authors used this measure as an indicator of linguistic proficiency and examined its effect on performance in language reception, independent of bottom-up auditory processing. In groups of adults with normal hearing (NH, n = 22), acquired hearing impairment (AHI, n = 22), and moderate to severe CHI (n = 21), the authors assessed linguistic proficiency by analyzing the morphosyntactic correctness of their spoken language production. Language reception skills were examined with a task for masked sentence recognition in the visual domain (text), at a readability level of 50%, using grammatically correct sentences and sentences with distorted morphosyntactic cues. The actual performance on the tasks was compared between groups. Adults with CHI made more morphosyntactic errors in spoken language production than adults with NH, while no differences were observed between the AHI and NH group. This outcome pattern sustained when comparisons were restricted to subgroups of AHI and CHI adults, matched for current auditory speech reception abilities. The data yielded no differences between groups in performance in masked text recognition of grammatically correct sentences in a test condition in which subjects could fully take advantage of their linguistic knowledge. Also, no difference between groups was found in the sensitivity to morphosyntactic distortions when processing short masked sentences, presented visually. These data showed that problems with the correct use of specific morphosyntactic knowledge in spoken language production are a long-term effect of moderate to severe CHI, independent of current auditory processing abilities. However, moderate to severe CHI generally does not impede performance in masked language reception in the visual modality, as measured in this study with short, degraded sentences. Aspects of linguistic proficiency that are affected by CHI thus do not seem to play a role in masked sentence recognition in the visual modality.

Relationship Among Signal Fidelity, Hearing Loss, and Working Memory for Digital Noise Suppression.

PubMed

Arehart, Kathryn; Souza, Pamela; Kates, James; Lunner, Thomas; Pedersen, Michael Syskind

2015-01-01

This study considered speech modified by additive babble combined with noise-suppression processing. The purpose was to determine the relative importance of the signal modifications, individual peripheral hearing loss, and individual cognitive capacity on speech intelligibility and speech quality. The participant group consisted of 31 individuals with moderate high-frequency hearing loss ranging in age from 51 to 89 years (mean = 69.6 years). Speech intelligibility and speech quality were measured using low-context sentences presented in babble at several signal-to-noise ratios. Speech stimuli were processed with a binary mask noise-suppression strategy with systematic manipulations of two parameters (error rate and attenuation values). The cumulative effects of signal modification produced by babble and signal processing were quantified using an envelope-distortion metric. Working memory capacity was assessed with a reading span test. Analysis of variance was used to determine the effects of signal processing parameters on perceptual scores. Hierarchical linear modeling was used to determine the role of degree of hearing loss and working memory capacity in individual listener response to the processed noisy speech. The model also considered improvements in envelope fidelity caused by the binary mask and the degradations to envelope caused by error and noise. The participants showed significant benefits in terms of intelligibility scores and quality ratings for noisy speech processed by the ideal binary mask noise-suppression strategy. This benefit was observed across a range of signal-to-noise ratios and persisted when up to a 30% error rate was introduced into the processing. Average intelligibility scores and average quality ratings were well predicted by an objective metric of envelope fidelity. Degree of hearing loss and working memory capacity were significant factors in explaining individual listener's intelligibility scores for binary mask processing applied to speech in babble. Degree of hearing loss and working memory capacity did not predict listeners' quality ratings. The results indicate that envelope fidelity is a primary factor in determining the combined effects of noise and binary mask processing for intelligibility and quality of speech presented in babble noise. Degree of hearing loss and working memory capacity are significant factors in explaining variability in listeners' speech intelligibility scores but not in quality ratings.

Video encryption using chaotic masks in joint transform correlator

NASA Astrophysics Data System (ADS)

Saini, Nirmala; Sinha, Aloka

2015-03-01

A real-time optical video encryption technique using a chaotic map has been reported. In the proposed technique, each frame of video is encrypted using two different chaotic random phase masks in the joint transform correlator architecture. The different chaotic random phase masks can be obtained either by using different iteration levels or by using different seed values of the chaotic map. The use of different chaotic random phase masks makes the decryption process very complex for an unauthorized person. Optical, as well as digital, methods can be used for video encryption but the decryption is possible only digitally. To further enhance the security of the system, the key parameters of the chaotic map are encoded using RSA (Rivest-Shamir-Adleman) public key encryption. Numerical simulations are carried out to validate the proposed technique.

EUV phase-shifting masks and aberration monitors

NASA Astrophysics Data System (ADS)

Deng, Yunfei; Neureuther, Andrew R.

2002-07-01

Rigorous electromagnetic simulation with TEMPEST is used to examine the use of phase-shifting masks in EUV lithography. The effects of oblique incident illumination and mask patterning by ion-mixing of multilayers are analyzed. Oblique incident illumination causes streamers at absorber edges and causes position shifting in aerial images. The diffraction waves between ion-mixed and pristine multilayers are observed. The phase-shifting caused by stepped substrates is simulated and images show that it succeeds in creation of phase-shifting effects. The diffraction process at the phase boundary is also analyzed. As an example of EUV phase-shifting masks, a coma pattern and probe based aberration monitor is simulated and aerial images are formed under different levels of coma aberration. The probe signal rises quickly as coma increases as designed.

Advances in Thin Film Thermocouple Durability Under High Temperature and Pressure Testing Conditions

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Fralick, Gustave C.; Taylor, Keith F.

1999-01-01

Thin film thermocouples for measuring material surface temperature have been previously demonstrated on several material systems and in various hostile test environments. A well-developed thin film fabrication procedure utilizing shadow masking for patterning the sensors elements had produced thin films with sufficient durability for applications in high temperature and pressure environments that exist in air-breathing and hydrogen-fueled burner rig and engine test facilities. However, while shadow masking had been a reliable method for specimens with flat and gently curved surfaces, it had not been consistently reliable for use on test components with sharp contours. This work reports on the feasibility of utilizing photolithography processing for patterning thin film thermocouples. Because this patterning process required changes in the thin film deposition process from that developed for shadow masking, the effect of these changes on thin film adherence during burner rig testing was evaluated. In addition to the results of changing the patterning method, the effects on thin film adherence of other processes used in the thin film fabrication procedure is also presented.

Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

NASA Astrophysics Data System (ADS)

Miller, Timothy M.; Abrahams, John H.; Allen, Christine A.

2006-04-01

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

Selective impairment of masked priming in dual-task performance.

PubMed

Fischer, Rico; Kiesel, Andrea; Kunde, Wilfried; Schubert, Torsten

2011-03-01

This study investigated the impact of divided attention on masked priming. In a dual-task setting, two tasks had to be carried out in close temporal succession: a tone discrimination task and a masked priming task. The order of the tasks was varied between experiments, and attention was always allocated to the first task-that is, the first task was prioritized. The priming task was the second (nonprioritized) task in Experiment 1 and the first (prioritized) task in Experiment 2. In both experiments, "novel" prime stimuli associated with semantic processing were essentially ineffective. However, there was intact priming by another type of prime stimuli associated with response priming. Experiment 3 showed that all these prime stimuli can reveal significant priming effects during a task-switching paradigm in which both tasks were performed consecutively. We conclude that dual-task specific interference processes (e.g., the simultaneous coordination of multiple stimulus-response rules) selectively impair priming that is assumed to rely on semantic processing.

Can perceptual grouping unfold in the absence of awareness? Comparing grouping during continuous flash suppression and sandwich masking.

PubMed

Kimchi, Ruth; Devyatko, Dina; Sabary, Shahar

2018-04-01

In this study we examined whether grouping by luminance similarity and grouping by connectedness can occur in the absence of visual awareness, using a priming paradigm and two methods to render the prime invisible, CFS and sandwich masking under matched conditions. For both groupings, significant response priming effects were observed when the prime was reported invisible under sandwich masking, but none were obtained under CFS. These results provide evidence for unconscious grouping, converging with previous findings showing that visual awareness is not essential for certain perceptual organization processes to occur. They are also consistent with findings indicating that processing during CFS is limited, and suggest the involvement of higher visual areas in perceptual organization. Moreover, these results demonstrate that whether a process can occur without awareness is dependent on the level at which the suppression induced by the method used for rendering the stimulus inaccessible to awareness takes place. Copyright © 2018 Elsevier Inc. All rights reserved.

Auditory Time-Frequency Masking for Spectrally and Temporally Maximally-Compact Stimuli

PubMed Central

Laback, Bernhard; Savel, Sophie; Ystad, Sølvi; Balazs, Peter; Meunier, Sabine; Kronland-Martinet, Richard

2016-01-01

Many audio applications perform perception-based time-frequency (TF) analysis by decomposing sounds into a set of functions with good TF localization (i.e. with a small essential support in the TF domain) using TF transforms and applying psychoacoustic models of auditory masking to the transform coefficients. To accurately predict masking interactions between coefficients, the TF properties of the model should match those of the transform. This involves having masking data for stimuli with good TF localization. However, little is known about TF masking for mathematically well-localized signals. Most existing masking studies used stimuli that are broad in time and/or frequency and few studies involved TF conditions. Consequently, the present study had two goals. The first was to collect TF masking data for well-localized stimuli in humans. Masker and target were 10-ms Gaussian-shaped sinusoids with a bandwidth of approximately one critical band. The overall pattern of results is qualitatively similar to existing data for long maskers. To facilitate implementation in audio processing algorithms, a dataset provides the measured TF masking function. The second goal was to assess the potential effect of auditory efferents on TF masking using a modeling approach. The temporal window model of masking was used to predict present and existing data in two configurations: (1) with standard model parameters (i.e. without efferents), (2) with cochlear gain reduction to simulate the activation of efferents. The ability of the model to predict the present data was quite good with the standard configuration but highly degraded with gain reduction. Conversely, the ability of the model to predict existing data for long maskers was better with than without gain reduction. Overall, the model predictions suggest that TF masking can be affected by efferent (or other) effects that reduce cochlear gain. Such effects were avoided in the experiment of this study by using maximally-compact stimuli. PMID:27875575

Auditory Time-Frequency Masking for Spectrally and Temporally Maximally-Compact Stimuli.

PubMed

Necciari, Thibaud; Laback, Bernhard; Savel, Sophie; Ystad, Sølvi; Balazs, Peter; Meunier, Sabine; Kronland-Martinet, Richard

2016-01-01

Many audio applications perform perception-based time-frequency (TF) analysis by decomposing sounds into a set of functions with good TF localization (i.e. with a small essential support in the TF domain) using TF transforms and applying psychoacoustic models of auditory masking to the transform coefficients. To accurately predict masking interactions between coefficients, the TF properties of the model should match those of the transform. This involves having masking data for stimuli with good TF localization. However, little is known about TF masking for mathematically well-localized signals. Most existing masking studies used stimuli that are broad in time and/or frequency and few studies involved TF conditions. Consequently, the present study had two goals. The first was to collect TF masking data for well-localized stimuli in humans. Masker and target were 10-ms Gaussian-shaped sinusoids with a bandwidth of approximately one critical band. The overall pattern of results is qualitatively similar to existing data for long maskers. To facilitate implementation in audio processing algorithms, a dataset provides the measured TF masking function. The second goal was to assess the potential effect of auditory efferents on TF masking using a modeling approach. The temporal window model of masking was used to predict present and existing data in two configurations: (1) with standard model parameters (i.e. without efferents), (2) with cochlear gain reduction to simulate the activation of efferents. The ability of the model to predict the present data was quite good with the standard configuration but highly degraded with gain reduction. Conversely, the ability of the model to predict existing data for long maskers was better with than without gain reduction. Overall, the model predictions suggest that TF masking can be affected by efferent (or other) effects that reduce cochlear gain. Such effects were avoided in the experiment of this study by using maximally-compact stimuli.

Backward masking, the suffix effect, and preperceptual storage.

PubMed

Kallman, H J; Massaro, D W

1983-04-01

This article considers the use of auditory backward recognition masking (ABRM) and stimulus suffix experiments as indexes of preperceptual auditory storage. In the first part of the article, two ABRM experiments that failed to demonstrate a mask disinhibition effect found previously in stimulus suffix experiments are reported. The failure to demonstrate mask disinhibition is inconsistent with an explanation of ABRM in terms of lateral inhibition. In the second part of the article, evidence is presented to support the conclusion that the suffix effect involves the contributions of later processing stages and does not provide an uncontaminated index of preperceptual storage. In contrast, it is claimed that ABRM experiments provide the most direct index of the temporal course of perceptual recognition. Partial-report tasks and other paradigms are also evaluated in terms of their contributions to an understanding of preperceptual auditory storage. Differences between interruption and integration masking are discussed along with the role of preperceptual auditory storage in speech perception.

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

NASA Astrophysics Data System (ADS)

Li, Yi-Gui; Yang, Chun-Sheng; Liu, Jing-Quan; Sugiyama, Susumu

2011-03-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost.

Unmasking the effects of masking on performance: The potential of multiple-voice masking in the office environment.

PubMed

Keus van de Poll, Marijke; Carlsson, Johannes; Marsh, John E; Ljung, Robert; Odelius, Johan; Schlittmeier, Sabine J; Sundin, Gunilla; Sörqvist, Patrik

2015-08-01

Broadband noise is often used as a masking sound to combat the negative consequences of background speech on performance in open-plan offices. As office workers generally dislike broadband noise, it is important to find alternatives that are more appreciated while being at least not less effective. The purpose of experiment 1 was to compare broadband noise with two alternatives-multiple voices and water waves-in the context of a serial short-term memory task. A single voice impaired memory in comparison with silence, but when the single voice was masked with multiple voices, performance was on level with silence. Experiment 2 explored the benefits of multiple-voice masking in more detail (by comparing one voice, three voices, five voices, and seven voices) in the context of word processed writing (arguably a more office-relevant task). Performance (i.e., writing fluency) increased linearly from worst performance in the one-voice condition to best performance in the seven-voice condition. Psychological mechanisms underpinning these effects are discussed.

The semantic origin of unconscious priming: Behavioral and event-related potential evidence during category congruency priming from strongly and weakly related masked words.

PubMed

Ortells, Juan J; Kiefer, Markus; Castillo, Alejandro; Megías, Montserrat; Morillas, Alejandro

2016-01-01

The mechanisms underlying masked congruency priming, semantic mechanisms such as semantic activation or non-semantic mechanisms, for example response activation, remain a matter of debate. In order to decide between these alternatives, reaction times (RTs) and event-related potentials (ERPs) were recorded in the present study, while participants performed a semantic categorization task on visible word targets that were preceded either 167 ms (Experiment 1) or 34 ms before (Experiment 2) by briefly presented (33 ms) novel (unpracticed) masked prime words. The primes and targets belonged to different categories (unrelated), or they were either strongly or weakly semantically related category co-exemplars. Behavioral (RT) and electrophysiological masked congruency priming effects were significantly greater for strongly related pairs than for weakly related pairs, indicating a semantic origin of effects. Priming in the latter condition was not statistically reliable. Furthermore, priming effects modulated the N400 event-related potential (ERP) component, an electrophysiological index of semantic processing, but not ERPs in the time range of the N200 component, associated with response conflict and visuo-motor response priming. The present results demonstrate that masked congruency priming from novel prime words also depends on semantic processing of the primes and is not exclusively driven by non-semantic mechanisms such as response activation. Copyright © 2015 Elsevier B.V. All rights reserved.

Estimation of Damaged Areas due to the 2010 Chile Earthquake and Tsunami Using SAR Imagery of Alos/palsar

NASA Astrophysics Data System (ADS)

Made, Pertiwi Jaya Ni; Miura, Fusanori; Besse Rimba, A.

2016-06-01

A large-scale earthquake and tsunami affect thousands of people and cause serious damages worldwide every year. Quick observation of the disaster damage is extremely important for planning effective rescue operations. In the past, acquiring damage information was limited to only field surveys or using aerial photographs. In the last decade, space-borne images were used in many disaster researches, such as tsunami damage detection. In this study, SAR data of ALOS/PALSAR satellite images were used to estimate tsunami damage in the form of inundation areas in Talcahuano, the area near the epicentre of the 2010 Chile earthquake. The image processing consisted of three stages, i.e. pre-processing, analysis processing, and post-processing. It was conducted using multi-temporal images before and after the disaster. In the analysis processing, inundation areas were extracted through the masking processing. It consisted of water masking using a high-resolution optical image of ALOS/AVNIR-2 and elevation masking which built upon the inundation height using DEM image of ASTER-GDEM. The area result was 8.77 Km2. It showed a good result and corresponded to the inundation map of Talcahuano. Future study in another area is needed in order to strengthen the estimation processing method.

A chronometric exploration of high-resolution 'sensitive TMS masking' effects on subjective and objective measures of vision.

PubMed

de Graaf, Tom A; Herring, Jim; Sack, Alexander T

2011-03-01

Transcranial magnetic stimulation (TMS) can induce masking by interfering with ongoing neural activity in early visual cortex. Previous work has explored the chronometry of occipital involvement in vision by using single pulses of TMS with high temporal resolution. However, conventionally TMS intensities have been high and the only measure used to evaluate masking was objective in nature. Recent studies have begun to incorporate subjective measures of vision, alongside objective ones. The current study goes beyond previous work in two regards. First, we explored both objective vision (an orientation discrimination task) and subjective vision (a stimulus visibility rating on a four-point scale), across a wide range of time windows with high temporal resolution. Second, we used a very sensitive TMS-masking paradigm: stimulation was at relatively low TMS intensities, with a figure-8 coil, and the small stimulus was difficult to discriminate already at baseline level. We hypothesized that this should increase the effective temporal resolution of our paradigm. Perhaps for this reason, we are able to report a rather interesting masking curve. Within the classical-masking time window, previously reported to encompass broad SOAs anywhere between 60 and 120 ms, we report not one, but at least two dips in objective performance, with no masking in-between. The subjective measure of vision did not mirror this pattern. These preliminary data from our exploratory design suggest that, with sensitive TMS masking, we might be able to reveal visual processes in early visual cortex previously unreported.

Can monaural temporal masking explain the ongoing precedence effect?

PubMed

Freyman, Richard L; Morse-Fortier, Charlotte; Griffin, Amanda M; Zurek, Patrick M

2018-02-01

The precedence effect for transient sounds has been proposed to be based primarily on monaural processes, manifested by asymmetric temporal masking. This study explored the potential for monaural explanations with longer ("ongoing") sounds exhibiting the precedence effect. Transient stimuli were single lead-lag noise burst pairs; ongoing stimuli were trains of 63 burst pairs. Unlike with transients, monaural masking data for ongoing sounds showed no advantage for the lead, and are inconsistent with asymmetric audibility as an explanation for ongoing precedence. This result, along with supplementary measurements of interaural time discrimination, suggests different explanations for transient and ongoing precedence.

The pros and cons of masked priming.

PubMed

Forster, K I

1998-03-01

Masked priming paradigms offer the promise of tapping automatic, strategy-free lexical processing, as evidenced by the lack of expectancy disconfirmation effects, and proportionality effects in semantic priming experiments. But several recent findings suggest the effects may be prelexical. These findings concern nonword priming effects in lexical decision and naming, the effects of mixed-case presentation on nonword priming, and the dependence of priming on the nature of the distractors in lexical decision, suggesting possible strategy effects. The theory underlying each of these effects is discussed, and alternative explanations are developed that do not preclude a lexical basis for masked priming effects.

Carbon contamination topography analysis of EUV masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Y.-J.; Yankulin, L.; Thomas, P.

2010-03-12

The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

Disentangling the Developmental Trajectories of Letter Position and Letter Identity Coding Using Masked Priming

ERIC Educational Resources Information Center

Kezilas, Yvette; McKague, Meredith; Kohnen, Saskia; Badcock, Nicholas A.; Castles, Anne

2017-01-01

Masked transposed-letter (TL) priming effects have been used to index letter position processing over the course of reading development. Whereas some studies have reported an increase in TL priming over development, others have reported a decrease. These findings have led to the development of 2 somewhat contradictory accounts of letter position…

Differential modulation of visual object processing in dorsal and ventral stream by stimulus visibility.

PubMed

Ludwig, Karin; Sterzer, Philipp; Kathmann, Norbert; Hesselmann, Guido

2016-10-01

As a functional organization principle in cortical visual information processing, the influential 'two visual systems' hypothesis proposes a division of labor between a dorsal "vision-for-action" and a ventral "vision-for-perception" stream. A core assumption of this model is that the two visual streams are differentially involved in visual awareness: ventral stream processing is closely linked to awareness while dorsal stream processing is not. In this functional magnetic resonance imaging (fMRI) study with human observers, we directly probed the stimulus-related information encoded in fMRI response patterns in both visual streams as a function of stimulus visibility. We parametrically modulated the visibility of face and tool stimuli by varying the contrasts of the masks in a continuous flash suppression (CFS) paradigm. We found that visibility - operationalized by objective and subjective measures - decreased proportionally with increasing log CFS mask contrast. Neuronally, this relationship was closely matched by ventral visual areas, showing a linear decrease of stimulus-related information with increasing mask contrast. Stimulus-related information in dorsal areas also showed a dependency on mask contrast, but the decrease rather followed a step function instead of a linear function. Together, our results suggest that both the ventral and the dorsal visual stream are linked to visual awareness, but neural activity in ventral areas more closely reflects graded differences in awareness compared to dorsal areas. Copyright © 2016 Elsevier Ltd. All rights reserved.

Masked immediate-repetition-priming effect on the early lexical process in the bilateral anterior temporal areas assessed by neuromagnetic responses.

PubMed

Fujimaki, Norio; Hayakawa, Tomoe; Ihara, Aya; Matani, Ayumu; Wei, Qiang; Terazono, Yasushi; Murata, Tsutomu

2010-10-01

A masked priming paradigm has been used to measure unconscious and automatic context effects on the processing of words. However, its spatiotemporal neural basis has not yet been clarified. To test the hypothesis that masked repetition priming causes enhancement of neural activation, we conducted a magnetoencephalography experiment in which a prime was visually presented for a short duration (50 ms), preceded by a mask pattern, and followed by a target word that was represented by a Japanese katakana syllabogram. The prime, which was identical to the target, was represented by another hiragana syllabogram in the "Repeated" condition, whereas it was a string of unreadable pseudocharacters in the "Unrepeated" condition. Subjects executed a categorical decision task on the target. Activation was significantly larger for the Repeated condition than for the Unrepeated condition at a time window of 150-250 ms in the right occipital area, 200-250 ms in the bilateral ventral occipitotemporal areas, and 200-250 ms and 200-300 ms in the left and right anterior temporal areas, respectively. These areas have been reported to be related to processing of visual-form/orthography and lexico-semantics, and the enhanced activation supports the hypothesis. However, the absence of the priming effect in the areas related to phonological processing implies that automatic phonological priming effect depends on task requirements. 2010 Elsevier Ireland Ltd and the Japan Neuroscience Society. All rights reserved.

Uncertainty in the visibility mask of a survey and its effects on the clustering of biased tracers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Colavincenzo, M.; Monaco, P.; Borgani, S.

The forecasted accuracy of upcoming surveys of large-scale structure cannot be achieved without a proper quantification of the error induced by foreground removal (or other systematics like 0-point photometry offset). Because these errors are highly correlated on the sky, their influence is expected to be especially important at very large scales, at and beyond the first Baryonic Acoustic Oscillation (BAO). In this work we quantify how the uncertainty in the visibility mask of a survey, that gives the survey depth in a specific sky area, influences the measured power spectrum of a sample of tracers of the density field andmore » its covariance matrix. We start from a very large set of 10,000 catalogs of dark matter (DM) halos in periodic cosmological boxes, produced with the PINOCCHIO approximate method. To make an analytic approach feasible, we assume luminosity-independent halo bias and an idealized geometry for the visibility mask, that is constant in square tiles of physical length l ; this should be interpreted as the projection, at the observation redshift, of the angular correlation scale of the foreground residuals. We find that the power spectrum of these biased tracers can be expressed as the sum of a cosmological term, a mask term and a term involving their convolution. The mask and convolution terms scale like P ∝ l {sup 2}σ {sub A} {sup 2}, where σ {sub A} {sup 2} is the variance of the uncertainty on the visibility mask. With l = 30−100 Mpc/ h and σ {sub A} = 5−20%, the mask term can be significant at k ∼ 0.01−0.1 h /Mpc, and the convolution term can amount to ∼ 1−10% of the total. The influence of mask uncertainty on power spectrum covariance is more complicated: the coupling of the convolution term with the other two gives rise to several mixed terms, that we quantify by difference using the mock catalogs. These are found to be of the same order of the mask covariance, and to introduce non-diagonal terms at large scales. As a consequence, the power spectrum covariance matrix cannot be expressed as the sum of a cosmological and of a mask term. More realistic settings (realistic foregrounds, luminosity-dependent bias) make the analytical approach not feasible, and the problem requires on the one hand usage of extended sets of mock catalogs, on the other hand detailed knowledge of the correlations among errors in the visibility masks. Our results lie down the theoretical bases to quantify the impact that uncertainties in the mask calibration have on the derivation of cosmological constraints from large spectroscopic surveys.« less

Speech communications in noise

NASA Technical Reports Server (NTRS)

1984-01-01

The physical characteristics of speech, the methods of speech masking measurement, and the effects of noise on speech communication are investigated. Topics include the speech signal and intelligibility, the effects of noise on intelligibility, the articulation index, and various devices for evaluating speech systems.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

PubMed

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, NoSoung; Ko, Heung Cho; Jung, Gun Young

2015-08-28

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

Photorefractive keratectomy at 193 nm using an erodible mask

NASA Astrophysics Data System (ADS)

Gordon, Michael; Brint, Stephen F.; Durrie, Daniel S.; Seiler, Theo; Friedman, Marc D.; Johnsson, N. M. F.; King, Michael C.; Muller, David F.

1992-08-01

Clinical experience with more than ten thousand sighted eyes has demonstrated great promise for correcting myopia with photorefractive keratectomy (PRK). Previously reported techniques have incorporated computer-controlled irises, diaphragms, and apertures to regulate the desired distribution of 193 nm radiation onto the eye. This paper reports on an entirely new approach for performing PRK which utilizes an erodible mask to control the shape transfer process. Compared to the more traditional techniques, the erodible mask offers promise of correcting a broad range of refractive errors. In this paper the erodible mask and associated hardware are described in detail. We describe the shape transfer experiments used to predict the functional relationship between the desired refractive correction and the mask shape. We report on early clinical results from five patients with myopic astigmatism. We conclude that the early shape transfer experiments overestimated the spherical component of the correction by 1.25 diopters and underestimated the cylindrical component by approximately 0.85 diopters. The data suggest there may be biological effects which evoke different healing responses when myopic PRK corrections are performed with and without astigmatism. Clinical trials are proceeding with the mask shapes adjusted for these observations.

Effective data compaction algorithm for vector scan EB writing system

NASA Astrophysics Data System (ADS)

Ueki, Shinichi; Ashida, Isao; Kawahira, Hiroichi

2001-01-01

We have developed a new mask data compaction algorithm dedicated to vector scan electron beam (EB) writing systems for 0.13 μm device generation. Large mask data size has become a significant problem at mask data processing for which data compaction is an important technique. In our new mask data compaction, 'array' representation and 'cell' representation are used. The mask data format for the EB writing system with vector scan supports these representations. The array representation has a pitch and a number of repetitions in both X and Y direction. The cell representation has a definition of figure group and its reference. The new data compaction method has the following three steps. (1) Search arrays of figures by selecting pitches of array so that a number of figures are included. (2) Find out same arrays that have same repetitive pitch and number of figures. (3) Search cells of figures, where the figures in each cell take identical positional relationship. By this new method for the mask data of a 4M-DRAM block gate layer with peripheral circuits, 202 Mbytes without compaction was highly compacted to 6.7 Mbytes in 20 minutes on a 500 MHz PC.

Understanding response proclivity and the limits of sensory capability: What do we hear and what can we hear?

NASA Astrophysics Data System (ADS)

Leek, Marjorie R.; Neff, Donna L.

2004-05-01

Charles Watson's studies of informational masking and the effects of stimulus uncertainty on auditory perception have had a profound impact on auditory research. His series of seminal studies in the mid-1970s on the detection and discrimination of target sounds in sequences of brief tones with uncertain properties addresses the fundamental problem of extracting target signals from background sounds. As conceptualized by Chuck and others, informational masking results from more central (even ``cogneetive'') processes as a consequence of stimulus uncertainty, and can be distinguished from ``energetic'' masking, which primarily arises from the auditory periphery. Informational masking techniques are now in common use to study the detection, discrimination, and recognition of complex sounds, the capacity of auditory memory and aspects of auditory selective attention, the often large effects of training to reduce detrimental effects of uncertainty, and the perceptual segregation of target sounds from irrelevant context sounds. This paper will present an overview of past and current research on informational masking, and show how Chuck's work has been expanded in several directions by other scientists to include the effects of informational masking on speech perception and on perception by listeners with hearing impairment. [Work supported by NIDCD.

Phase in Optical Image Processing

NASA Astrophysics Data System (ADS)

Naughton, Thomas J.

2010-04-01

The use of phase has a long standing history in optical image processing, with early milestones being in the field of pattern recognition, such as VanderLugt's practical construction technique for matched filters, and (implicitly) Goodman's joint Fourier transform correlator. In recent years, the flexibility afforded by phase-only spatial light modulators and digital holography, for example, has enabled many processing techniques based on the explicit encoding and decoding of phase. One application area concerns efficient numerical computations. Pushing phase measurement to its physical limits, designs employing the physical properties of phase have ranged from the sensible to the wonderful, in some cases making computationally easy problems easier to solve and in other cases addressing mathematics' most challenging computationally hard problems. Another application area is optical image encryption, in which, typically, a phase mask modulates the fractional Fourier transformed coefficients of a perturbed input image, and the phase of the inverse transform is then sensed as the encrypted image. The inherent linearity that makes the system so elegant mitigates against its use as an effective encryption technique, but we show how a combination of optical and digital techniques can restore confidence in that security. We conclude with the concept of digital hologram image processing, and applications of same that are uniquely suited to optical implementation, where the processing, recognition, or encryption step operates on full field information, such as that emanating from a coherently illuminated real-world three-dimensional object.

Improving 130nm node patterning using inverse lithography techniques for an analog process

NASA Astrophysics Data System (ADS)

Duan, Can; Jessen, Scott; Ziger, David; Watanabe, Mizuki; Prins, Steve; Ho, Chi-Chien; Shu, Jing

2018-03-01

Developing a new lithographic process routinely involves usage of lithographic toolsets and much engineering time to perform data analysis. Process transfers between fabs occur quite often. One of the key assumptions made is that lithographic settings are equivalent from one fab to another and that the transfer is fluid. In some cases, that is far from the truth. Differences in tools can change the proximity effect seen in low k1 imaging processes. If you use model based optical proximity correction (MBOPC), then a model built in one fab will not work under the same conditions at another fab. This results in many wafers being patterned to try and match a baseline response. Even if matching is achieved, there is no guarantee that optimal lithographic responses are met. In this paper, we discuss the approach used to transfer and develop new lithographic processes and define MBOPC builds for the new lithographic process in Fab B which was transferred from a similar lithographic process in Fab A. By using PROLITHTM simulations to match OPC models for each level, minimal downtime in wafer processing was observed. Source Mask Optimization (SMO) was also used to optimize lithographic processes using novel inverse lithography techniques (ILT) to simultaneously optimize mask bias, depth of focus (DOF), exposure latitude (EL) and mask error enhancement factor (MEEF) for critical designs for each level.

Quantitation of specific binding ratio in 123I-FP-CIT SPECT: accurate processing strategy for cerebral ventricular enlargement with use of 3D-striatal digital brain phantom.

PubMed

Furuta, Akihiro; Onishi, Hideo; Amijima, Hizuru

2018-06-01

This study aimed to evaluate the effect of ventricular enlargement on the specific binding ratio (SBR) and to validate the cerebrospinal fluid (CSF)-Mask algorithm for quantitative SBR assessment of 123 I-FP-CIT single-photon emission computed tomography (SPECT) images with the use of a 3D-striatum digital brain (SDB) phantom. Ventricular enlargement was simulated by three-dimensional extensions in a 3D-SDB phantom comprising segments representing the striatum, ventricle, brain parenchyma, and skull bone. The Evans Index (EI) was measured in 3D-SDB phantom images of an enlarged ventricle. Projection data sets were generated from the 3D-SDB phantoms with blurring, scatter, and attenuation. Images were reconstructed using the ordered subset expectation maximization (OSEM) algorithm and corrected for attenuation, scatter, and resolution recovery. We bundled DaTView (Southampton method) with the CSF-Mask processing software for SBR. We assessed SBR with the use of various coefficients (f factor) of the CSF-Mask. Specific binding ratios of 1, 2, 3, 4, and 5 corresponded to SDB phantom simulations with true values. Measured SBRs > 50% that were underestimated with EI increased compared with the true SBR and this trend was outstanding at low SBR. The CSF-Mask improved 20% underestimates and brought the measured SBR closer to the true values at an f factor of 1.0 despite an increase in EI. We connected the linear regression function (y = - 3.53x + 1.95; r = 0.95) with the EI and f factor using root-mean-square error. Processing with CSF-Mask generates accurate quantitative SBR from dopamine transporter SPECT images of patients with ventricular enlargement.

An optimized OPC and MDP flow for reducing mask write time and mask cost

NASA Astrophysics Data System (ADS)

Yang, Ellyn; Li, Cheng He; Park, Se Jin; Zhu, Yu; Guo, Eric

2010-09-01

In the process of optical proximity correction, layout edge or fragment is migrating to proper position in order to minimize edge placement error (EPE). During this fragment migration, several factors other than EPE can be also taken into account as a part of cost function for optimal fragment displacement. Several factors are devised in favor of OPC stability, which can accommodate room for high mask error enhancement factor (MEEF), lack of process window, catastrophic pattern failure such as pinch/bridge and improper fragmentation. As technology node becomes finer, there happens conflict between OPC accuracy and stability. Especially for metal layers, OPC has focused on the stability by loss of accurate OPC results. On this purpose, several techniques have been introduced, which are target smoothing, process window aware OPC, model-based retargeting and adaptive OPC. By utilizing those techniques, OPC enables more stabilized patterning, instead of realizing design target exactly on wafer. Inevitably, post-OPC layouts become more complicated because those techniques invoke additional edge, or fragments prior to correction or during OPC iteration. As a result, jogs of post OPC layer can be dramatically increased, which results in huge number of shot count after data fracturing. In other words, there is trade-off relationship between data complexity and various methods for OPC stability. In this paper, those relationships have been investigated with respect to several technology nodes. The mask shot count reduction is achieved by reducing the number of jogs with which EPE difference are within pre-specified value. The effect of jog smoothing on OPC output - in view of OPC performance and mask data preparation - was studied quantitatively for respective technology nodes.