Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

PubMed Central

Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

2016-01-01

A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

Development of Bread Board Model of TRMM precipitation radar

NASA Astrophysics Data System (ADS)

Okamoto, Ken'ichi; Ihara, Toshio; Kumagai, Hiroshi

The active array radar was selected as a reliable candidate for the TRMM (Tropical Rainfall Measuring Mission) precipitation radar after the trade off studies performed by Communications Research Laboratory (CRL) in the US-Japan joint feasibility study of TRMM in 1987-1988. Main system parameters and block diagram for TRMM precipitation radar are shown as the result of feasibility study. CRL developed key devices for the active array precipitation radar such as 8-element slotted waveguide array antenna, the 5 bit PIN diode phase shifters, solid state power amplifiers and low noise amplifiers in 1988-1990. Integration of these key devices was made to compose 8-element Bread Board Model of TRMM precipitation radar.

Hands-on work fine-tunes X-band PIN-diode duplexer

NASA Astrophysics Data System (ADS)

Schneider, P.

1985-06-01

Computer-aided design (CAD) programs for fabricating PIN-diode duplexers are useful in avoiding time-consuming cut-and-try techniques. Nevertheless, to attain minimum insertion loss, only experimentation yields the optimum microstrip circuitry. A PIN-diode duplexer, consisting of two SPST PIN-diode switches and a pair of 3-dB Lange microstrip couplers, designed for an X-band transmit/receive module exemplifies what is possible when computer-derived designs and experimentation are used together. Differences between the measured and computer-generated figures for insertion loss can be attributed to several factors not included in the CAD program - for example, radiation and connector losses. Mechanical tolerances of the microstrip PC board and variations in the SMA connector-to-microstrip transition contribute to the discrepancy.

Switchable zero-index metamaterials by loading positive-intrinsic-negative diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiang, Nan; Cheng, Qiang, E-mail: qiangcheng@emfield.org; Zhao, Jie

2014-02-03

We propose switchable zero-index metamaterials (ZIMs) implemented by split ring resonators (SRRs) loaded with positive-intrinsic-negative (PIN) diode switching elements. We demonstrate that ZIMs can be achieved at around 10 GHz when the PIN diode is switched off. When the PIN diode is switched on, however, the designed metamaterials have impedance matching to the free space, which is useful to reduce the reflections at the interface of two media. The switchable ZIMs are suitable for a wide variety of applications like the beam forming and directive radiation. Experimental results validate the switching ability of the proposed ZIMs.

CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

PubMed

Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

2010-12-01

We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Research on reverse recovery characteristics of SiGeC p-i-n diodes

NASA Astrophysics Data System (ADS)

Gao, Yong; Liu, Jing; Yang, Yuan

2008-12-01

This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

An adaptive array antenna for mobile satellite communications

NASA Technical Reports Server (NTRS)

Milne, Robert

1988-01-01

The adaptive array is linearly polarized and consists essentially of a driven lambda/4 monopole surrounded by an array of parasitic elements all mounted on a ground plane of finite size. The parasitic elements are all connected to ground via pin diodes. By applying suitable bias voltages, the desired parasitic elements can be activated and made highly reflective. The directivity and pointing of the antenna beam can be controlled in both the azimuth and elevation planes using high speed digital switching techniques. The antenna RF losses are neglible and the maximum gain is close to the theoretical value determined by the effective aperture size. The antenna is compact, has a low profile, is inexpensive to manufacture and can handle high transmitter power.

11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

DTIC Science & Technology

2012-01-30

drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

DTIC Science & Technology

2016-05-16

have investigated the surface plasmon enhancement of the GeSn p-i-n photodiode using gold metal nanostructures. We have conducted numerical...simulation of the plasmonic structure of 2D nano-hole array to tune the surface plasmon resonance into the absorption range of the GeSn active layer. Such a...diode can indeed be enhanced with the plasmonic structure on top. Within the time span of this project, we have completed one iteration of the process

A Novel 24 Ghz One-Shot Rapid and Portable Microwave Imaging System (Camera)

NASA Technical Reports Server (NTRS)

Ghasr, M.T.; Abou-Khousa, M.A.; Kharkovsky, S.; Zoughi, R.; Pommerenke, D.

2008-01-01

A novel 2D microwave imaging system at 24 GHz based on MST techniques. Enhanced sensitivity and SNR by utilizing PIN diode-loaded resonant slots. Specific slot and array design to increase transmission and reduce cross -coupling. Real-time imaging at a rate in excess of 30 images per second. Reflection as well transmission mode capabilities. Utility and application for electric field distribution mapping related to: Nondestructive Testing (NDT), imaging applications (SAR, Holography), and antenna pattern measurements.

Analysis of the influence of processing of stir-baking with glycyrrhizae on the main components of Euodiae Fructus by high-performance liquid chromatography with diode array detector.

PubMed

Hu, Jue; Wu, Xin; Cao, Gang; Chen, Xiaocheng

2014-01-01

Euodiae Fructus is one of the most commonly used Chinese herbs in China. Specifically, the crude Euodiae Fructus and its processed products of Gancao Zhi Pin are used clinically for the treatment of different diseases. In order to improve the quality control standard and evaluate the crude and processed Euodiae Fructus, in this study, a simple and sensitive high-performance liquid chromatography-diode array detector method was developed for the simultaneous determination of five major compounds in Euodiae Fructus. The results indicated that the five components had significant linear relation (r(2) ≥ 0.9997) between the peak area and the injected concentration. The average recoveries of the five components were in the range from 97.38% to 102.56%. Overall intra- and inter-day variations were less than 1.36%. The developed method can be applied to the intrinsic quality control of crude and processed Euodiae Fructus.

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

PubMed

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

A p-i-n junction diode based on locally doped carbon nanotube network

PubMed Central

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

2016-01-01

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm. PMID:26996610

A p-i-n junction diode based on locally doped carbon nanotube network.

PubMed

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

2016-03-21

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~10(4)), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

A p-i-n junction diode based on locally doped carbon nanotube network

NASA Astrophysics Data System (ADS)

Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

2016-03-01

A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

NASA Astrophysics Data System (ADS)

Devès, G.; Matsuyama, S.; Barbotteau, Y.; Ishii, K.; Ortega, R.

2006-05-01

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

Design and fabrication of two kind of SOI-based EA-type VOAs

NASA Astrophysics Data System (ADS)

Yuan, Pei; Wang, Yue; Wu, Yuanda; An, Junming; Hu, Xiongwei

2018-06-01

SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76 dB/mA and 0.189 dB/mA respectively. The corresponding power consumption at 20 dB attenuation is 202 mW (series VOA) and 424 mW (single VOA) respectively. The raise time is 34.5 ns (single VOA) and 45.5 ns (series VOA), and the fall time is 37 ns (single VOA) and 48.5 ns (series VOA).

Four-channel surface coil array for sequential CW-EPR image acquisition

NASA Astrophysics Data System (ADS)

Enomoto, Ayano; Emoto, Miho; Fujii, Hirotada; Hirata, Hiroshi

2013-09-01

This article describes a four-channel surface coil array to increase the area of visualization for continuous-wave electron paramagnetic resonance (CW-EPR) imaging. A 776-MHz surface coil array was constructed with four independent surface coil resonators and three kinds of switches. Control circuits for switching the resonators were also built to sequentially perform EPR image acquisition for each resonator. The resonance frequencies of the resonators were shifted using PIN diode switches to decouple the inductively coupled coils. To investigate the area of visualization with the surface coil array, three-dimensional EPR imaging was performed using a glass cell phantom filled with a solution of nitroxyl radicals. The area of visualization obtained with the surface coil array was increased approximately 3.5-fold in comparison to that with a single surface coil resonator. Furthermore, to demonstrate the applicability of this surface coil array to animal imaging, three-dimensional EPR imaging was performed in a living mouse with an exogenously injected nitroxyl radical imaging agent.

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

2017-06-01

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

A novel broadband bi-mode active frequency selective surface

NASA Astrophysics Data System (ADS)

Xu, Yang; Gao, Jinsong; Xu, Nianxi; Shan, Dongzhi; Song, Naitao

2017-05-01

A novel broadband bi-mode active frequency selective surface (AFSS) is presented in this paper. The proposed structure is composed of a periodic array of convoluted square patches and Jerusalem Crosses. According to simulation results, the frequency response of AFSS definitely exhibits a mode switch feature between band-pass and band-stop modes when the diodes stay in ON and OFF states. In order to apply a uniform bias to each PIN diode, an ingenious biasing network based on the extension of Wheatstone bridge is adopted in prototype AFSS. The test results are in good agreement with the simulation results. A further physical mechanism of the bi-mode AFSS is shown by contrasting the distribution of electric field on the AFSS patterns for the two working states.

Method and apparatus for enhancing vortex pinning by conformal crystal arrays

DOEpatents

Janko, Boldizsar; Reichhardt, Cynthia; Reichhardt, Charles; Ray, Dipanjan

2015-07-14

Disclosed is a method and apparatus for strongly enhancing vortex pinning by conformal crystal arrays. The conformal crystal array is constructed by a conformal transformation of a hexagonal lattice, producing a non-uniform structure with a gradient where the local six-fold coordination of the pinning sites is preserved, and with an arching effect. The conformal pinning arrays produce significantly enhanced vortex pinning over a much wider range of field than that found for other vortex pinning geometries with an equivalent number of vortex pinning sites, such as random, square, and triangular.

Thermal characterization of gallium nitride p-i-n diodes

NASA Astrophysics Data System (ADS)

Dallas, J.; Pavlidis, G.; Chatterjee, B.; Lundh, J. S.; Ji, M.; Kim, J.; Kao, T.; Detchprohm, T.; Dupuis, R. D.; Shen, S.; Graham, S.; Choi, S.

2018-02-01

In this study, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes. Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were applied to GaN p-i-n diodes to determine if each technique is capable of providing insight into the thermal characteristics of vertical devices. Of these techniques, thermoreflectance thermal imaging and nanoparticle assisted Raman thermometry proved to yield accurate results and are the preferred methods of thermal characterization of vertical GaN diodes. Along with this, steady state and transient thermoreflectance measurements were performed on vertical and quasi-vertical GaN p-i-n diodes employing GaN and Sapphire substrates, respectively. Electro-thermal modeling was performed to validate measurement results and to demonstrate the effect of current crowding on the thermal response of quasi-vertical diodes. In terms of mitigating the self-heating effect, both the steady state and transient measurements demonstrated the superiority of the tested GaN-on-GaN vertical diode compared to the tested GaN-on-Sapphire quasi-vertical structure.

Solid state neutron dosimeter for space applications

NASA Technical Reports Server (NTRS)

Entine, Gerald; Nagargar, Vivek; Sharif, Daud

1990-01-01

Personnel engaged in space flight are exposed to significant flux of high energy neutrons arising from both primary and secondary sources of ionizing radiation. Presently, there exist no compact neutron sensor capable of being integrated in a flight instrument to provide real time measurement of this radiation flux. A proposal was made to construct such an instrument using special PIN silicon diode which has the property of being insensitive to the other forms of ionizing radiation. Studies were performed to determine the design and construction of a better reading system to allow the PIN diode to be read with high precision. The physics of the device was studied, especially with respect to those factors which affect the sensitivity and reproducibility of the neutron response. This information was then used to develop methods to achieve high sensitivity at low neutron doses. The feasibility was shown of enhancing the PIN diode sensitivity to make possible the measurement of the low doses of neutrons encountered in space flights. The new PIN diode will make possible the development of a very compact, accurate, personal neutron dosimeter.

Driving force of stacking-fault formation in SiC p-i-n diodes.

PubMed

Ha, S; Skowronski, M; Sumakeris, J J; Paisley, M J; Das, M K

2004-04-30

The driving force of stacking-fault expansion in SiC p-i-n diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the driving force. A thermodynamic free energy difference between the perfect and a faulted structure is suggested as a plausible driving force in the tested diodes, indicating that hexagonal polytypes of silicon carbide are metastable at room temperature.

Time-of-flight measurements of heavy ions using Si PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strekalovsky, A. O., E-mail: alex.strek@bk.ru; Kamanin, D. V.; Pyatkov, Yu. V.

2016-12-15

A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

Flexible microwave PIN diodes and switches employing transferrable single-crystal Si nanomembranes on plastic substrates

NASA Astrophysics Data System (ADS)

Qin, Guoxuan; Yuan, Hao-Chih; Celler, George K.; Zhou, Weidong; Ma, Zhenqiang

2009-12-01

This paper reports the realization of flexible RF/microwave PIN diodes and switches using transferrable single-crystal Si nanomembranes (SiNM) that are monolithically integrated on low-cost, flexible plastic substrates. High frequency response is obtained through the realization of low parasitic resistance achieved with heavy ion implantation before nanomembrane release and transfer. The flexible lateral SiNM PIN diodes exhibit typical rectifying characteristics with insertion loss and isolation better than 0.9 dB and 19.6 dB, respectively, from DC to 5 GHz, as well as power handling up to 22.5 dBm without gain compression. A single-pole single-throw (SPST) flexible RF switch employing shunt-series PIN diode configuration has achieved insertion loss and isolation better than 0.6 dB and 22.9 dB, respectively, from DC to 5 GHz. Furthermore, the SPST microwave switch shows performance improvement and robustness under mechanical deformation conditions. The study demonstrates the considerable potential of using properly processed transferrable SiNM for microwave passive components. Future investigations on transferrable SiNMs will lead to eventual realization of monolithic microwave integrated systems on low-cost flexible substrates.

Field-programmable beam reconfiguring based on digitally-controlled coding metasurface

NASA Astrophysics Data System (ADS)

Wan, Xiang; Qi, Mei Qing; Chen, Tian Yi; Cui, Tie Jun

2016-02-01

Digital phase shifters have been applied in traditional phased array antennas to realize beam steering. However, the phase shifter deals with the phase of the induced current; hence, it has to be in the path of each element of the antenna array, making the phased array antennas very expensive. Metamaterials and/or metasurfaces enable the direct modulation of electromagnetic waves by designing subwavelength structures, which opens a new way to control the beam scanning. Here, we present a direct digital mechanism to control the scattered electromagnetic waves using coding metasurface, in which each unit cell loads a pin diode to produce binary coding states of “1” and “0”. Through data lines, the instant communications are established between the coding metasurface and the internal memory of field-programmable gate arrays (FPGA). Thus, we realize the digital modulation of electromagnetic waves, from which we present the field-programmable reflective antenna with good measurement performance. The proposed mechanism and functional device have great application potential in new-concept radar and communication systems.

Reversible ratchet effects for vortices in conformal pinning arrays

DOE PAGES

Reichhardt, Charles; Ray, Dipanjan; Reichhardt, Cynthia Jane Olson

2015-05-04

A conformal transformation of a uniform triangular pinning array produces a structure called a conformal crystal which preserves the sixfold ordering of the original lattice but contains a gradient in the pinning density. Here we use numerical simulations to show that vortices in type-II superconductors driven with an ac drive over gradient pinning arrays produce the most pronounced ratchet effect over a wide range of parameters for a conformal array, while square gradient or random gradient arrays with equivalent pinning densities give reduced ratchet effects. In the conformal array, the larger spacing of the pinning sites in the direction transversemore » to the ac drive permits easy funneling of interstitial vortices for one driving direction, producing the enhanced ratchet effect. In the square array, the transverse spacing between pinning sites is uniform, giving no asymmetry in the funneling of the vortices as the driving direction switches, while in the random array, there are numerous easy-flow channels present for either direction of drive. We find multiple ratchet reversals in the conformal arrays as a function of vortex density and ac amplitude, and correlate the features with a reversal in the vortex ordering, which is greater for motion in the ratchet direction. In conclusion, the enhanced conformal pinning ratchet effect can also be realized for colloidal particles moving over a conformal array, indicating the general usefulness of conformal structures for controlling the motion of particles.« less

Development of a tagged source of Pb-206 nuclei

NASA Astrophysics Data System (ADS)

Cutter, J.; Godfrey, B.; Hillbrand, S.; Irving, M.; Manalaysay, A.; Minaker, Z.; Morad, J.; Tripathi, M.

2018-02-01

There is a particular class of unavoidable backgrounds that plague low-background experiments and rare event searches, particularly those searching for nuclear recoil event signatures: decaying daughters of the 238U nuclear decay chain, which result from radon plate-out on detector materials. One such daughter isotope, 210Po, undergoes α-decay and produces a recoiling 103 keV 206Pb nucleus. To characterize this important background in the context of noble element detectors, we have implemented a triggered source for these 206Pb recoils in a dual-phase xenon time projection chamber (Xe TPC) within the Davis Xenon R&D testbed system (DAX). By adhering 210Po to the surface of a PIN diode and electrically floating the diode on the cathode of the TPC, we tag the α signals produced in the PIN diode and trigger on the correlated nuclear recoils in the liquid xenon (LXe). We discuss our methods for 210Po deposition, electronic readout of the PIN diode signals at high voltage, and analysis methods for event selection.

An Integrating Dosimeter for Pulsed Radiation,

DTIC Science & Technology

1983-12-01

obtained using 10 MeV electrons from a linear accelerator and placing the TLDs in an aluminum package equivalent to the thickness of the pin diode * --. and...Radiation Dosimetry System overcomes this problem by electronic - ally integrating the output of a pin diode. The integrator section of the system...for publication. APPROVED: BOBBY L. BUCHANAN, Chief Radiation Hardened Electronics Technology Branch V-. Solid State Sciences Division APPROVED

Electronically controlled spoof localized surface plasmons on the corrugated ring with a shorting pin

NASA Astrophysics Data System (ADS)

Zhang, Chao; Zhou, Yong Jin

2018-07-01

We have demonstrated that spoof localized surface plasmons (LSPs) can be controlled by loading a shorting pin into the corrugated ring resonator in the microwave and terahertz (THz) frequencies. Electronical switchability and tunability of spoof LSPs have been achieved by mounting Schottky barrier diodes and varactor diodes across the slit around the shorting pin in the ground plane. An electronically tunable band-pass filter has been demostrated in the microwave frequencies. Such electronically controlled spoof LSPs devices can find more applications for highly integrated plasmonic circuits in microwave and THz frequencies.

Gratings and Random Reflectors for Near-Infrared PIN Diodes

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Bandara, Sumith; Liu, John; Ting, David

2007-01-01

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Low-Cost WDM-PON With Colorless Bidirectional Transceivers

NASA Astrophysics Data System (ADS)

Shin, Dong Jae; Keh, Y. C.; Kwon, J. W.; Lee, E. H.; Lee, J. K.; Park, M. K.; Park, J. W.; Oh, Y. K.; Kim, S. W.; Yun, I. K.; Shin, H. C.; Heo, D.; Lee, J. S.; Shin, H. S.; Kim, H. S.; Park, S. B.; Jung, D. K.; Hwang, Seongtaek; Oh, Y. J.; Jang, D. H.; Shim, C. S.

2006-01-01

This paper presents a low-cost bidirectional (BiDi) wavelength-division-multiplexed passive optical network (WDM-PON) employing colorless uncooled BiDi transceivers (TRxs) and superluminescent diode (SLD)-based broadband light sources (BLSs). The C band is allocated for upstream and the E+ band for downstream in consideration of BiDi packaging, SLD development, and wavelength alignment of dual-window arrayed waveguide gratings (AWGs). The BiDi TRx integrates an uncooled Fabry-Pérot laser diode (FP-LD), a p-i-n photodiode (PD), and a 45°-angled thin-film filter in a small-form-factor (SFF) package. The SLD-based BLSs provide 13-dBm amplified spontaneous emissions (ASEs) with spectral ripples of < 3 dB and polarization dependencies of < 1 dB. Colorless operations over 32 100-GHz-spaced channels are demonstrated from -20 to 80°C in 155-Mb/s BiDi transmissions over 25 km.

Determination of X-ray flux using silicon pin diodes

PubMed Central

Owen, Robin L.; Holton, James M.; Schulze-Briese, Clemens; Garman, Elspeth F.

2009-01-01

Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and 18 keV. These experiments have shown that a simple model based on energy deposition in silicon is sufficient for determining the flux incident on high-quality silicon pin diodes. The derivation and validation of this model is presented, and a web-based tool for the use of the macromolecular crystallography and wider synchrotron community is introduced. PMID:19240326

Modeling of a sensitive time-of-flight flash LiDAR system

NASA Astrophysics Data System (ADS)

Fathipour, V.; Wheaton, S.; Johnson, W. E.; Mohseni, H.

2016-09-01

used for monitoring and profiling structures, range, velocity, vibration, and air turbulence. Remote sensing in the IR region has several advantages over the visible region, including higher transmitter energy while maintaining eye-safety requirements. Electron-injection detectors are a new class of detectors with high internal avalanche-free amplification together with an excess-noise-factor of unity. They have a cutoff wavelength of 1700 nm. Furthermore, they have an extremely low jitter. The detector operates in linear-mode and requires only bias voltage of a few volts. This together with the feedback stabilized gain mechanism, makes formation of large-format high pixel density electron-injection FPAs less challenging compared to other detector technologies such as avalanche photodetectors. These characteristics make electron-injection detectors an ideal choice for flash LiDAR application with mm scale resolution at longer ranges. Based on our experimentally measured device characteristics, a detailed theoretical LiDAR model was developed. In this model we compare the performance of the electron-injection detector with commercially available linear-mode InGaAs APD from (Hamamatsu G8931-20) as well as a p-i-n diode (Hamamatsu 11193 p-i-n). Flash LiDAR images obtained by our model, show the electron-injection detector array (of 100 x 100 element) achieves better resolution with higher signal-to-noise compared with both the InGaAs APD and the p-i-n array (of 100 x 100 element).

Fin-line PIN-diode attenuators and switches for 94 GHz range

NASA Astrophysics Data System (ADS)

Meinel, H.; Callsen, H.

1982-06-01

The letter reports new results of fin-line PIN-diode attenuators and switches for the 94 GHz range. Design and performance of SPST and SPDT switches - single pole single throw and single pole double throw, respectively - will be presented. The attenuation of the SPST switch, for example, can be adjusted between 2 and 35 dB over the entire waveguide band from 75 to 110 GHz.

Pin diode calibration - beam overlap monitoring for low energy cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drees, A.; Montag, C.; Thieberger, P.

2015-09-30

We were trying to address the question whether or not the Pin Diodes, currently installed approximately 1 meter downstream of the RHIC primary collimators, are suitable to monitor a recombination signal from the future RHIC low energy cooling section. A maximized recombination signal, with the Au+78 ions being lost on the collimator, will indicate optimal Au-electron beam overlap as well as velocity matching of the electron beam in the cooling section.

Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

PubMed

Kiaee, Zohreh; Joo, Seung Ki

2018-03-01

The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Noise characteristics of passive components for phased array applications

NASA Technical Reports Server (NTRS)

Sonmez, M. Kemal; Trew, Robert J.

1991-01-01

The results of a comparative study on noise characteristics of basic power combining/dividing and phase shifting schemes are presented. The theoretical basics of thermal noise in a passive linear multiport are discussed. A new formalism is presented to describe the noise behavior of the passive circuits, and it is shown that the fundamental results are conveniently achieved using this description. The results of analyses concerning the noise behavior of basic power combining/dividing structures (the Wilkinson combiner, 90 deg hybrid coupler, hybrid ring coupler, and the Lange coupler) are presented. Three types of PIN-diode switch phase shifters are analyzed in terms of noise performance.

4H-SiC p i n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

NASA Astrophysics Data System (ADS)

Camara, N.; Zekentes, K.; Zelenin, V. V.; Abramov, P. L.; Kirillov, A. V.; Romanov, L. P.; Boltovets, N. S.; Krivutsa, V. A.; Thuaire, A.; Bano, E.; Tsoi, E.; Lebedev, A. A.

2008-02-01

Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p-i-n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method for carrier diffusion length determination, electro-luminescence microscopy (EL), deep level transient spectroscopy (DLTS), C-V profiling and Hall-effect measurements. When possible, the same investigation techniques were used in parallel with similar layers grown by chemical vapour deposition (CVD) epitaxy and the physical properties of the two kind of epitaxied layers were compared. p-i-n diodes were fabricated in parallel on SEV and CVD-grown layers and showed close electrical performances in dc mode in term of capacitance, resistance and transient time switching, despite the lower mobility and the diffusion length of the SEV-grown layers. X-band microwave switches based on the SEV-grown p-i-n diodes have been demonstrated with insertion loss lower than 4 dB and an isolation higher than 17 dB. These single-pole single-throw (SPST) switches were able to handle a pulsed power up to 1800 W in isolation mode, similar to the value obtained with switches incorporating diodes with CVD-grown layers.

11.72-sq cm Active-Area Wafer Interconnected PiN Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA(sup 2)-s

DTIC Science & Technology

2012-01-30

calculated action exceeded 1.7 MA2 -s. Preliminary efforts on high voltage diode interconnection have produced quarter wafer interconnected PiN...was packaged in a “hockey-puck” configuration and pulsed to 64 kA, dissipating 382 J with a calculated action exceeding 1.7 MA2 -s. II. FULL...epitaxial layers are utilized. 11.72-cm2 Active-area Wafer Interconnected PiN Diode pulsed at 64 kA dissipates 382 J and exhibits an action of 1.7 MA2 -s

High-sensitive computed tomography system using a silicon-PIN x-ray diode

NASA Astrophysics Data System (ADS)

Sato, Eiichi; Sato, Yuich; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

2012-10-01

A low-dose-rate X-ray computed tomography (CT) system is useful for reducing absorbed dose for patients. The CT system with a tube current of 1.91 mA was developed using a silicon-PIN X-ray diode (Si-PIN-XD). The Si-PIN-XD is a selected high-sensitive Si-PIN photodiode (PD) for detecting X-ray photons. X-ray photons are detected directly using the Si-PIN-XD without a scintillator, and the photocurrent from the diode is amplified using current-voltage and voltage-voltage amplifiers. The output voltage is converted into logical pulses using a voltage-frequency converter with maximum frequency of 500 kHz, and the frequency is proportional to the voltage. The pulses from the converter are sent to differentiator with a time constant of 1 μs to generate short positive pulses for counting, and the pulses are counted using a counter card. Tomography is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 5 min at a scan step of 0.5 mm and a rotation step of 3.0°. The tube current and voltage were 1.91 mA and 100 kV, respectively, and gadolinium K-edge CT was carried out using filtered X-ray spectra with a peak energy of 52 keV.

Influence of bilayer resist processing on p-i-n OLEDs: towards multicolor photolithographic structuring of organic displays

NASA Astrophysics Data System (ADS)

Krotkus, Simonas; Nehm, Frederik; Janneck, Robby; Kalkura, Shrujan; Zakhidov, Alex A.; Schober, Matthias; Hild, Olaf R.; Kasemann, Daniel; Hofmann, Simone; Leo, Karl; Reineke, Sebastian

2015-03-01

Recently, bilayer resist processing combined with development in hydrofluoroether (HFE) solvents has been shown to enable single color structuring of vacuum-deposited state-of-the-art organic light-emitting diodes (OLED). In this work, we focus on further steps required to achieve multicolor structuring of p-i-n OLEDs using a bilayer resist approach. We show that the green phosphorescent OLED stack is undamaged after lift-off in HFEs, which is a necessary step in order to achieve RGB pixel array structured by means of photolithography. Furthermore, we investigate the influence of both, double resist processing on red OLEDs and exposure of the devices to ambient conditions, on the basis of the electrical, optical and lifetime parameters of the devices. Additionally, water vapor transmission rates of single and bilayer system are evaluated with thin Ca film conductance test. We conclude that diffusion of propylene glycol methyl ether acetate (PGMEA) through the fluoropolymer film is the main mechanism behind OLED degradation observed after bilayer processing.

CMOS image sensor with lateral electric field modulation pixels for fluorescence lifetime imaging with sub-nanosecond time response

NASA Astrophysics Data System (ADS)

Li, Zhuo; Seo, Min-Woong; Kagawa, Keiichiro; Yasutomi, Keita; Kawahito, Shoji

2016-04-01

This paper presents the design and implementation of a time-resolved CMOS image sensor with a high-speed lateral electric field modulation (LEFM) gating structure for time domain fluorescence lifetime measurement. Time-windowed signal charge can be transferred from a pinned photodiode (PPD) to a pinned storage diode (PSD) by turning on a pair of transfer gates, which are situated beside the channel. Unwanted signal charge can be drained from the PPD to the drain by turning on another pair of gates. The pixel array contains 512 (V) × 310 (H) pixels with 5.6 × 5.6 µm2 pixel size. The imager chip was fabricated using 0.11 µm CMOS image sensor process technology. The prototype sensor has a time response of 150 ps at 374 nm. The fill factor of the pixels is 5.6%. The usefulness of the prototype sensor is demonstrated for fluorescence lifetime imaging through simulation and measurement results.

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

PubMed

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

Characterization of an Mg-implanted GaN p-i-n Diode

DTIC Science & Technology

2016-03-31

unintentionally doped GaN layer was grown by metal organic chemical vapor deposition (MOCVD) on a n+ Ga -face c-oriented GaN substrate. The as-grown MOCVD film...their proper lattice sites. In the case of Mg implanted GaN , the Mg must replace Ga to result in p-type material. In many other semiconductor...Characterization of an Mg-implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J

Multigigabit optical transceivers for high-data rate military applications

NASA Astrophysics Data System (ADS)

Catanzaro, Brian E.; Kuznia, Charlie

2012-01-01

Avionics has experienced an ever increasing demand for processing power and communication bandwidth. Currently deployed avionics systems require gigabit communication using opto-electronic transceivers connected with parallel optical fiber. Ultra Communications has developed a series of transceiver solutions combining ASIC technology with flip-chip bonding and advanced opto-mechanical molded optics. Ultra Communications custom high speed ASIC chips are developed using an SoS (silicon on sapphire) process. These circuits are flip chip bonded with sources (VCSEL arrays) and detectors (PIN diodes) to create an Opto-Electronic Integrated Circuit (OEIC). These have been combined with micro-optics assemblies to create transceivers with interfaces to standard fiber array (MT) cabling technology. We present an overview of the demands for transceivers in military applications and how new generation transceivers leverage both previous generation military optical transceivers as well as commercial high performance computing optical transceivers.

Design of a Nested Eight-Channel Sodium and Four-Channel Proton Coil for 7 Tesla Knee Imaging

PubMed Central

Brown, Ryan; Madelin, Guillaume; Lattanzi, Riccardo; Chang, Gregory; Regatte, Ravinder R.; Sodickson, Daniel K.; Wiggins, Graham C.

2012-01-01

The critical design aim for a dual-tuned sodium/proton coil is to maximize sodium sensitivity and transmit field (B1+) homogeneity while simultaneously providing adequate proton sensitivity and homogeneity. While most dual-frequency coils utilize lossy high-impedance trap circuits or PIN diodes to allow dual-resonance, we explored a nested-coil design for sodium/proton knee imaging at 7T. A stand-alone eight-channel sodium receive array was implemented without standard dual-resonance circuitry to provide improved sodium signal-to-noise ratio (SNR) over a volume coil. A detunable sodium birdcage was added for homogeneous sodium excitation and a four-channel proton transmit-receive array was added to provide anatomical reference imaging and B0 shimming capability. Both modules were implemented with minimal disturbance to the eight-channel sodium array by managing their respective resonances and geometrical arrangement. In vivo sodium SNR was 1.2 to 1.7 times greater in the developed eight-channel array than in a mono-nuclear sodium birdcage coil, while the developed four-channel proton array provided SNR similar to that of a commercial mono-nuclear proton birdcage coil. PMID:22887123

Heat transfer coefficients for staggered arrays of short pin fins

NASA Technical Reports Server (NTRS)

Vanfossen, G. J.

1981-01-01

Short pin fins are often used to increase that heat transfer to the coolant in the trailing edge of a turbine blade. Due primarily to limits of casting technology, it is not possible to manufacture pins of optimum length for heat transfer purposes in the trailing edge region. In many cases the pins are so short that they actually decrease the total heat transfer surface area compared to a plain wall. A heat transfer data base for these short pins is not available in the literature. Heat transfer coefficients on pin and endwall surfaces were measured for several staggered arrays of short pin fins. The measured Nusselt numbers when plotted versus Reynolds numbers were found to fall on a single curve for all surfaces tested. The heat transfer coefficients for the short pin fins (length to diameter ratios of 1/2 and 2) were found to be about a factor of two lower than data from the literature for longer pin arrays (length to diameter ratios of about 8).

Predicting the performance of linear optical detectors in free space laser communication links

NASA Astrophysics Data System (ADS)

Farrell, Thomas C.

2018-05-01

While the fundamental performance limit for optical communications is set by the quantum nature of light, in practical systems background light, dark current, and thermal noise of the electronics also degrade performance. In this paper, we derive a set of equations predicting the performance of PIN diodes and linear mode avalanche photo diodes (APDs) in the presence of such noise sources. Electrons generated by signal, background, and dark current shot noise are well modeled in PIN diodes as Poissonian statistical processes. In APDs, on the other hand, the amplifying effects of the device result in statistics that are distinctly non-Poissonian. Thermal noise is well modeled as Gaussian. In this paper, we appeal to the central limit theorem and treat both the variability of the signal and the sum of noise sources as Gaussian. Comparison against Monte-Carlo simulation of PIN diode performance (where we do model shot noise with draws from a Poissonian distribution) validates the legitimacy of this approximation. On-off keying, M-ary pulse position, and binary differential phase shift keying modulation are modeled. We conclude with examples showing how the equations may be used in a link budget to estimate the performance of optical links using linear receivers.

Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications

NASA Astrophysics Data System (ADS)

Ziegler, Volker; Berg, Michael; Tobler, Hans; Woelk, Claus; Deufel, Reinhard; Trasser, Andreas; Schumacher, Hermann; Alekseev, Egor; Pavlidis, Dimitris; Dickmann, Juergen

1999-02-01

In this paper, we present the measurement results of two InP-based coplanar SPST (single pole single throw) PIN diode switches operating at V-band frequencies. The switches show excellent mm-wave performance combined with a very low DC-power consumption. The SPST with on-chip biasing and DC-blocking capacitors demonstrates an insertion loss as low as 0.84 dB and a high isolation value of 21.8 dB at a center frequency of 53 GHz with only 0.8 mW of DC-power consumption. A more simple SPST exhibits under equivalent conditions (0.9 mW) an excellent insertion loss of 0.52 dB and an isolation of 21.7 dB. Furthermore the power-handling capability of the InGaAs PIN diodes, which are used as active switching elements, is investigated in this paper and found to exceed 25 dBm at a reverse voltage of -5 V.

Bandwidth enhancement of monopole antenna with DGS for SHF and reconfigurable structure for WiMAX, WLAN and C-band applications

NASA Astrophysics Data System (ADS)

Beigi, P.; Mohammadi, P.

2017-11-01

In this study a reconfigurable antenna for WiMAX, WLAN, C-bands and SHF applications has been presented. The main body of antenna includes rectangular and L-shaped slotted ground plane and a rectangular patch with slotted feed line, for impedance bandwidth enhancement. In the proposed antenna, a PIN diode is used to adjust the frequency band to SHF, WiMAX, WLAN and C-bands applications. When PIN diode is forward-biased, the antenna covers the 3.5-31 GHz frequency range (i.e. a 160% bandwidth) and when the PIN diode is in its off-state, it operates between 3.4-5.8 GHz. The designed antenna, with a very small size of 12 × 18 × 1.6 mm3, has been fabricated and tested. The radiation pattern is approximately omnidirectional. Simulations and experimental results are in a good agreement with each other and suggest good performance for the presented antenna.

A dual-band reconfigurable Yagi-Uda antenna with diverse radiation patterns

NASA Astrophysics Data System (ADS)

Saurav, Kushmanda; Sarkar, Debdeep; Srivastava, Kumar Vaibhav

2017-07-01

In this paper, a dual-band pattern reconfigurable antenna is proposed. The antenna comprises of a dual-band complementary split ring resonators (CSRRs) loaded dipole as the driven element and two copper strips with varying lengths as parasitic segments on both sides of the driven dipole. PIN diodes are used with the parasitic elements to control their electrical length. The CSRRs loading provide a lower order mode in addition to the reference dipole mode, while the parasitic elements along with the PIN diodes are capable of switching the omni-directional radiation of the dual-band driven element to nine different configurations of radiation patterns which include bi-directional end-fire, broadside, and uni-directional end-fire in both the operating bands. A prototype of the designed antenna together with the PIN diodes and DC bias lines is fabricated to validate the concept of dual-band radiation pattern diversity. The simulation and measurement results are in good agreement. The proposed antenna can be used in wireless access points for PCS and WLAN applications.

Development of a solar-powered infrared injection laser microminiature transmitting system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Falter, D.D.; Alley, G.T.; Falter, K.G.

1989-01-01

A solar-powered infrared microminiature transmitting system is being developed to provide scientists with a tool to continuously track and study Africanized bees. Present tracking methods have limited ranges and lack the capability of continuously tracking individual insects. Preliminary field tests of a stationary prototypic transmitter have demonstrated a range of 1.1 km. The basic design consists of an array of nine 1-mm{sup 2} solar cells, which collect energy for storage in a 1.0-{mu}F tantalum chip capacitor. When the capacitor has been charged to a sufficient level, the circuitry that monitors the capacitor voltage level wakes up'' and fires a 5-{mu}smore » pulse through an 840-nm GaAlAs injection laser diode. The process is then repeated, making the signal frequency (which ranges from 50 to 300 Hz) dependent on solar luminance. The solar cells, capacitor, and laser diode are mounted in hybrid microcircuit fashion directly on the silicon substrate containing the CMOS control and driver circuitry. The transmitter measures {approximately}4 {times} 6 mm and weighs {approximately}65 mg. The receiving system is based on an 8-in. telescope and a Si PIN diode detector. 8 refs., 10 figs.« less

Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

NASA Astrophysics Data System (ADS)

Bu, Yuan; Yoshimoto, Hiroyuki; Watanabe, Naoki; Shima, Akio

2017-12-01

We developed a simple technology for fabricating bipolar degradation-free 6.5 kV SiC PiN diodes on the basal plane dislocation (BPD)-free areas of commercially available 4H-SiC wafers. In order to suppress process-induced basal plane dislocation, we first investigated the causes of BPD generation during fabrication and then improved the processes. We found that no BPD was induced on a flat Si-face, but a large number of BPDs were concentrated in the mesa edge after high-dose Al ions were implanted [p++ ion implantation (I. I.)] at room temperature (RT) followed by activation annealing. Therefore, we examined new technologies in device processes including (I) long-term high-temperature oxidation after the mesa process to remove etching damage in the mesa edge and (II) reducing the Al dose (p+ I. I.) in the mesa edge to suppress BPD generation. We investigated the effect of the Al dose in the mesa edge on BPD generation and bipolar degradation. The results indicated that no BPD appeared when the dose was lower than 1 × 1015 atoms/cm2 and when long-term high-temperature oxidation was applied after the mesa process. As a result, we successfully fabricated 6.5 kV PiN diodes without bipolar degradation on BPD-free areas. Moreover, the diodes are very stable when applying 270 A/cm2 for over 100 h. Photoluminescence (PL) observation indicated that no BPD was generated during the improved fabrication processes. Besides, the Ir-Vr measurements showed that the breakdown voltage was over 8 kV at RT. The leakage currents are as low as 7.6 × 10-5 mA/cm2 (25 °C) and 6.3 × 10-4 mA/cm2 (150 °C) at 6.5 kV. Moreover, this result is applicable not only for PiN diodes but also for MOSFETs (body diode), IGBTs, thyristors, etc.

The differential absorption hard x-ray spectrometer at the Z facility

DOE PAGES

Bell, Kate S.; Coverdale, Christine A.; Ampleford, David J.; ...

2017-08-03

The Differential Absorption Hard X-ray (DAHX) spectrometer is a diagnostic developed to measure time-resolved radiation between 60 keV and 2 MeV at the Z Facility. It consists of an array of 7 Si PIN diodes in a tungsten housing that provides collimation and coarse spectral resolution through differential filters. DAHX is a revitalization of the Hard X-Ray Spectrometer (HXRS) that was fielded on Z prior to refurbishment in 2006. DAHX has been tailored to the present radiation environment in Z to provide information on the power, spectral shape, and time profile of the hard emission by plasma radiation sources drivenmore » by the Z Machine.« less

Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

NASA Astrophysics Data System (ADS)

Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.

2015-07-01

In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 mΩ cm2 becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters.

Scalable Testing Platform for CMOS Read In Integrated Circuits

DTIC Science & Technology

2016-03-31

light - emitting - diode (SLED) current on a monitor out (MOUT) pin. The MOUT pin can produce voltage or current readings, depending on the test case. The...in it means the SPI communication works correctly. Lighting up LEDs: All the RIICs have the corner pixels brought out to output pins. Thus...external LEDs can be connected to pins in order to test the behavior of the pixel drive circuitry. Lighting up LEDs is a great visual representation that

Detector with internal gain for short-wave infrared ranging applications

NASA Astrophysics Data System (ADS)

Fathipour, Vala; Mohseni, Hooman

2017-09-01