Science.gov

Sample records for pixel detectors irradiated

  1. Pre- and post-irradiation performance of FBK 3D silicon pixel detectors for CMS

    NASA Astrophysics Data System (ADS)

    Krzywda, A.; Alagoz, E.; Bubna, M.; Obertino, M.; Solano, A.; Arndt, K.; Uplegger, L.; Betta, G. F. Dalla; Boscardin, M.; Ngadiuba, J.; Rivera, R.; Menasce, D.; Moroni, L.; Terzo, S.; Bortoletto, D.; Prosser, A.; Adreson, J.; Kwan, S.; Osipenkov, I.; Bolla, G.; Lei, C. M.; Shipsey, I.; Tan, P.; Tran, N.; Chramowicz, J.; Cumalat, J.; Perera, L.; Povoli, M.; Mendicino, R.; Pereira, A. Vilela; Brosius, R.; Kumar, A.; Wagner, S.; Jensen, F.; Bose, S.; Tentindo, S.

    2014-11-01

    In preparation for the tenfold luminosity upgrade of the Large Hadron Collider (the HL-LHC) around 2020, three-dimensional (3D) silicon pixel sensors are being developed as a radiation-hard candidate to replace the planar ones currently being used in the CMS pixel detector. This study examines an early batch of FBK sensors (named ATLAS08) of three 3D pixel geometries: 1E, 2E, and 4E, which respectively contain one, two, and four readout electrodes for each pixel, passing completely through the bulk. We present electrical characteristics and beam test performance results for each detector before and after irradiation. The maximum fluence applied is 3.5×1015 n eq/cm2.

  2. Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

    NASA Astrophysics Data System (ADS)

    Allport, P. P.; Ball, K.; Casse, G.; Chmill, V.; Forshaw, D.; Hadfield, K.; Pritchard, A.; Pool, P.; Tsurin, I.

    2012-01-01

    The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their products meet all the stringent technical requirements. A semiconductor company with very widespread experience of producing science grade CCDs (including deep depletion devices) has adapted their CCD process to fabricate for the first time several wafers of pixel and micro-strip radiation hard sensors, suitable for future high energy physics experiments. The results of the pre-irradiation characterization of devices fabricated with different processing parameters and the measurements of charge collection properties after different hadron irradiation doses up to those anticipated for the (larger area) outer pixel layers at the high-luminosity LHC (HL-LHC) are presented and compared with results from more established particle physics suppliers.

  3. Beam test studies of 3D pixel sensors irradiated non-uniformly for the ATLAS forward physics detector

    NASA Astrophysics Data System (ADS)

    Grinstein, S.; Baselga, M.; Boscardin, M.; Christophersen, M.; Da Via, C.; Dalla Betta, G.-F.; Darbo, G.; Fadeyev, V.; Fleta, C.; Gemme, C.; Grenier, P.; Jimenez, A.; Lopez, I.; Micelli, A.; Nelist, C.; Parker, S.; Pellegrini, G.; Phlips, B.; Pohl, D.-L.; Sadrozinski, H. F.-W.; Sicho, P.; Tsiskaridze, S.

    2013-12-01

    Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

  4. Characterisation of a cobalt-60 small-beam animal irradiator using a realtime silicon pixelated detector

    NASA Astrophysics Data System (ADS)

    Porumb, C. S.; Davies, J. B.; Perevertaylo, V.; Rosenfeld, A. B.; Petasecca, M.

    2016-04-01

    The paper presents a study performed by the Centre for Medical Radiation Physics (CMRP) using a high spatial and temporal resolution silicon pixelated detector named MagicPlate-512. The study focuses on the characterisation of three pencil beams from a low-dose rate, 6 TBq, cobalt-60 source, in terms of percentage depth dose, beam profiles, output factor and shutter timing. Where applicable, the findings were verified against radiochromic EBT3 film and ionization chambers. It was found that the results of the MagicPlate-512 and film agreed within 0.9 mm for penumbra and full-width at half-maximum measurements of the beam profiles, and within 0.75% for percentage depth dose study. The dose rate of the cobalt-60 source was determined to be (10.65 ± 0.03) cGy/min at 1.5 cm depth in Solid Water. A significant asymmetry of the small pencil beam profile was found, which is due to the irregular machining of the small collimator. The average source shutter speed was calculated to be 26 cm/s. The study demonstrates that the MagicPlate-512 dosimetry system, developed at CMRP, is capable of beam characterisation even in cases of very low dose rate sources.

  5. Sensor development for the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Bolla, G.; Bortoletto, D.; Horisberger, R.; Kaufmann, R.; Rohe, T.; Roy, A.

    2002-06-01

    The CMS experiment which is currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will contain a pixel detector which provides in its final configuration three space points per track close to the interaction point of the colliding beams. Because of the harsh radiation environment of the LHC, the technical realization of the pixel detector is extremely challenging. The readout chip as the most damageable part of the system is believed to survive a particle fluence of 6×10 14 neq/ cm2 (All fluences are normalized to 1 MeV neutrons and therefore all components of the hybrid pixel detector have to perform well up to at least this fluence. As this requires a partially depleted operation of the silicon sensors after irradiation-induced type inversion of the substrate, an "n in n" concept has been chosen. In order to perform IV-tests on wafer level and to hold accidentally unconnected pixels close to ground potential, a resistive path between the pixels has been implemented by the openings in the p-stop implants surrounding every pixel cell. A prototype of such sensors has been produced by two different companies and especially the properties of these resistors have extensively been tested before and after irradiation.

  6. The ALICE Pixel Detector

    NASA Astrophysics Data System (ADS)

    Mercado-Perez, Jorge

    2002-07-01

    The present document is a brief summary of the performed activities during the 2001 Summer Student Programme at CERN under the Scientific Summer at Foreign Laboratories Program organized by the Particles and Fields Division of the Mexican Physical Society (Sociedad Mexicana de Fisica). In this case, the activities were related with the ALICE Pixel Group of the EP-AIT Division, under the supervision of Jeroen van Hunen, research fellow in this group. First, I give an introduction and overview to the ALICE experiment; followed by a description of wafer probing. A brief summary of the test beam that we had from July 13th to July 25th is given as well.

  7. Commissioning of the CMS Forward Pixel Detector

    SciTech Connect

    Kumar, Ashish; /SUNY, Buffalo

    2008-12-01

    The Compact Muon Solenoid (CMS) experiment is scheduled for physics data taking in summer 2009 after the commissioning of high energy proton-proton collisions at Large Hadron Collider (LHC). At the core of the CMS all-silicon tracker is the silicon pixel detector, comprising three barrel layers and two pixel disks in the forward and backward regions, accounting for a total of 66 million channels. The pixel detector will provide high-resolution, 3D tracking points, essential for pattern recognition and precise vertexing, while being embedded in a hostile radiation environment. The end disks of the pixel detector, known as the Forward Pixel detector, has been assembled and tested at Fermilab, USA. It has 18 million pixel cells with dimension 100 x 150 {micro}m{sup 2}. The complete forward pixel detector was shipped to CERN in December 2007, where it underwent extensive system tests for commissioning prior to the installation. The pixel system was put in its final place inside the CMS following the installation and bake out of the LHC beam pipe in July 2008. It has been integrated with other sub-detectors in the readout since September 2008 and participated in the cosmic data taking. This report covers the strategy and results from commissioning of CMS forward pixel detector at CERN.

  8. Optical links for the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Stucci, Stefania

    2016-07-01

    With the expected increase in the instantaneous luminosity of the LHC in the next few years, the off-detector optical read-out system of the outer two layers of the Pixel Detector of the ATLAS experiment will reach its bandwidth limits. The bandwidth will be increased with new optical receivers, which had to be redesigned since commercial solutions could not be used. The new design allows for a wider operational range in terms of data frequency and input optical power to match the on-detector transmitters of the present Pixel Detector. We report on the design and testing of prototypes of these components and the plans for the installation in the Pixel Detector read-out chain in 2015.

  9. LISe pixel detector for neutron imaging

    NASA Astrophysics Data System (ADS)

    Herrera, Elan; Hamm, Daniel; Wiggins, Brenden; Milburn, Rob; Burger, Arnold; Bilheux, Hassina; Santodonato, Louis; Chvala, Ondrej; Stowe, Ashley; Lukosi, Eric

    2016-10-01

    Semiconducting lithium indium diselenide, 6LiInSe2 or LISe, has promising characteristics for neutron detection applications. The 95% isotopic enrichment of 6Li results in a highly efficient thermal neutron-sensitive material. In this study, we report on a proof-of-principle investigation of a semiconducting LISe pixel detector to demonstrate its potential as an efficient neutron imager. The LISe pixel detector had a 4×4 of pixels with a 550 μm pitch on a 5×5×0.56 mm3 LISe substrate. An experimentally verified spatial resolution of 300 μm was observed utilizing a super-sampling technique.

  10. The Silicon Pixel Detector for ALICE Experiment

    SciTech Connect

    Fabris, D.; Bombonati, C.; Dima, R.; Lunardon, M.; Moretto, S.; Pepato, A.; Bohus, L. Sajo; Scarlassara, F.; Segato, G.; Shen, D.; Turrisi, R.; Viesti, G.; Anelli, G.; Boccardi, A.; Burns, M.; Campbell, M.; Ceresa, S.; Conrad, J.; Kluge, A.; Kral, M.

    2007-10-26

    The Inner Tracking System (ITS) of the ALICE experiment is made of position sensitive detectors which have to operate in a region where the track density may be as high as 50 tracks/cm{sup 2}. To handle such densities detectors with high precision and granularity are mandatory. The Silicon Pixel Detector (SPD), the innermost part of the ITS, has been designed to provide tracking information close to primary interaction point. The assembly of the entire SPD has been completed.

  11. Proceedings of PIXEL98 -- International pixel detector workshop

    SciTech Connect

    Anderson, D.F.; Kwan, S.

    1998-08-01

    Experiments around the globe face new challenges of more precision in the face of higher interaction rates, greater track densities, and higher radiation doses, as they look for rarer and rarer processes, leading many to incorporate pixelated solid-state detectors into their plans. The highest-readout rate devices require new technologies for implementation. This workshop reviewed recent, significant progress in meeting these technical challenges. Participants presented many new results; many of them from the weeks--even days--just before the workshop. Brand new at this workshop were results on cryogenic operation of radiation-damaged silicon detectors (dubbed the Lazarus effect). Other new work included a diamond sensor with 280-micron collection distance; new results on breakdown in p-type silicon detectors; testing of the latest versions of read-out chip and interconnection designs; and the radiation hardness of deep-submicron processes.

  12. Development of a CMOS SOI Pixel Detector

    SciTech Connect

    Arai, Y.; Hazumi, M.; Ikegami, Y.; Kohriki, T.; Tajima, O.; Terada, S.; Tsuboyama, T.; Unno, Y.; Ushiroda, Y.; Ikeda, H.; Hara, K.; Ishino, H.; Kawasaki, T.; Miyake, H.; Martin, E.; Varner, G.; Tajima, H.; Ohno, M.; Fukuda, K.; Komatsubara, H.; Ida, J.; /NONE - OKI ELECTR INDUST TOKYO

    2008-08-19

    We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 {micro}m fully-depleted-SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5 mm{sup 2} consisting of 20 x 20 {micro}m{sup 2} pixels have been designed and manufactured. Performance tests with a laser light illumination and a {beta} ray radioactive source indicate successful operation of the detector. We also briefly discuss the back gate effect as well as the simulation study.

  13. Commissioning of the ATLAS pixel detector

    SciTech Connect

    ATLAS Collaboration; Golling, Tobias

    2008-09-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented.

  14. Development of silicon micropattern pixel detectors

    NASA Astrophysics Data System (ADS)

    Heijne, E. H. M.; Antinori, F.; Beker, H.; Batignani, G.; Beusch, W.; Bonvicini, V.; Bosisio, L.; Boutonnet, C.; Burger, P.; Campbell, M.; Cantoni, P.; Catanesi, M. G.; Chesi, E.; Claeys, C.; Clemens, J. C.; Cohen Solal, M.; Darbo, G.; Da Via, C.; Debusschere, I.; Delpierre, P.; Di Bari, D.; Di Liberto, S.; Dierickx, B.; Enz, C. C.; Focardi, E.; Forti, F.; Gally, Y.; Glaser, M.; Gys, T.; Habrard, M. C.; Hallewell, G.; Hermans, L.; Heuser, J.; Hurst, R.; Inzani, P.; Jæger, J. J.; Jarron, P.; Karttaavi, T.; Kersten, S.; Krummenacher, F.; Leitner, R.; Lemeilleur, F.; Lenti, V.; Letheren, M.; Lokajicek, M.; Loukas, D.; Macdermott, M.; Maggi, G.; Manzari, V.; Martinengo, P.; Meddeler, G.; Meddi, F.; Mekkaoui, A.; Menetrey, A.; Middelkamp, P.; Morando, M.; Munns, A.; Musico, P.; Nava, P.; Navach, F.; Neyer, C.; Pellegrini, F.; Pengg, F.; Perego, R.; Pindo, M.; Pospisil, S.; Potheau, R.; Quercigh, E.; Redaelli, N.; Ridky, J.; Rossi, L.; Sauvage, D.; Segato, G.; Simone, S.; Sopko, B.; Stefanini, G.; Strakos, V.; Tempesta, P.; Tonelli, G.; Vegni, G.; Verweij, H.; Viertel, G. M.; Vrba, V.; Waisbard, J.; CERN RD19 Collaboration

    1994-09-01

    Successive versions of high speed, active silicon pixel detectors with integrated readout electronics have been developed for particle physics experiments using monolithic and hybrid technologies. Various matrices with binary output as well as a linear detector with analog output have been made. The hybrid binary matrix with 1024 cells (dimension 75 μm×500 μm) can capture events at ˜5 MHz and a selected event can then be read out in < 10 μs. In different beam tests at CERN a precision of 25 μm has been achieved and the efficiency was better than 99.2%. Detector thicknesses of 300 μm and 150 μm of silicon have been used. In a test with a 109Cd source a noise level of 170 e - r.m.s. (1.4 keV fwhm) has been measured with a threshold non-uniformity of 750 e - r.m.s. Objectives of the development work are the increase of the size of detecting area without loss of efficiency, the design of an appropriate readout architecture for collider operation, the reduction of material thickness in the detector, understanding of the threshold non-uniformity, study of the sensitivity of the pixel matrices to light and low energy electrons for scintillating fiber detector readout and last but not least, the optimization of cost and yield of the pixel detectors in production.

  15. The Belle II DEPFET pixel detector

    NASA Astrophysics Data System (ADS)

    Moser, Hans-Günther

    2016-09-01

    The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55-60) μm in the first layer and between 50 μm×(70-85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the 'internal gate' modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X0). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO2 system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

  16. Signal and noise of diamond pixel detectors at high radiation fluences

    NASA Astrophysics Data System (ADS)

    Tsung, J.-W.; Havranek, M.; Hügging, F.; Kagan, H.; Krüger, H.; Wermes, N.

    2012-09-01

    CVD diamond is an attractive material option for LHC vertex detectors mainly because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 1015 neq cm-2, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design and performance, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path λe/h of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 1015 particles cm-2, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors.

  17. Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

    SciTech Connect

    Maria Rita Coluccia et al.

    2002-11-13

    The pixel detector in the BteV experiment at the Tevatron (Fermi Laboratory) is an important detector component for high-resolution tracking and vertex identification. For this task the hybrid pixel detector has to work in a very harsh radiation environment with up to 10{sup 14} minimum ionizing particles/cm{sup 2}/year. Radiation hardness of prototype n{sup +}/n/p{sup +} silicon pixel sensors has been investigated. We present Electrical characterization curves for irradiated prototype n{sup +}/n/p{sup +} sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6 x 10{sup 14} protons/cm{sup 2}.

  18. Hit efficiency study of CMS prototype forward pixel detectors

    SciTech Connect

    Kim, Dongwook; /Johns Hopkins U.

    2006-01-01

    In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

  19. Status of the CMS Phase I pixel detector upgrade

    NASA Astrophysics Data System (ADS)

    Spannagel, S.

    2016-09-01

    A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

  20. Small pixel CZT detector for hard X-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Wilson, Matthew David; Cernik, Robert; Chen, Henry; Hansson, Conny; Iniewski, Kris; Jones, Lawrence L.; Seller, Paul; Veale, Matthew C.

    2011-10-01

    A new small pixel cadmium zinc telluride (CZT) detector has been developed for hard X-ray spectroscopy. The X-ray performance of four detectors is presented and the detectors are analysed in terms of the energy resolution of each pixel. The detectors were made from CZT crystals grown by the travelling heater method (THM) bonded to a 20×20 application specific integrated circuit (ASIC) and data acquisition (DAQ) system. The detectors had an array of 20×20 pixels on a 250 μm pitch, with each pixel gold-stud bonded to an energy resolving circuit in the ASIC. The DAQ system digitised the ASIC output with 14 bit resolution, performing offset corrections and data storage to disc in real time at up to 40,000 frames per second. The detector geometry and ASIC design was optimised for X-ray spectroscopy up to 150 keV and made use of the small pixel effect to preferentially measure the electron signal. A 241Am source was used to measure the spectroscopic performance and uniformity of the detectors. The average energy resolution (FWHM at 59.54 keV) of each pixel ranged from 1.09±0.46 to 1.50±0.57 keV across the four detectors. The detectors showed good spectral performance and uniform response over almost all pixels in the 20×20 array. A large area 80×80 pixel detector will be built that will utilise the scalable design of the ASIC and the large areas of monolithic spectroscopic grade THM grown CZT that are now available. The large area detector will have the same performance as that demonstrated here.

  1. Compensation for radiation damage of SOI pixel detector via tunneling

    NASA Astrophysics Data System (ADS)

    Yamada, M.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Ikegami, Y.; Kurachi, I.; Miyoshi, T.; Nishimura, R.; Tauchi, K.; Tsuboyama, T.

    2016-09-01

    We are developing a method for removing holes trapped in the oxide layer of a silicon-on-insulator (SOI) monolithic pixel detector after irradiation. Radiation that passes through the detector generates positive charge by trapped holes in the buried oxide layer (BOX) underneath the MOSFET. The positive potential caused by these trapped holes modifies the characteristics of the MOSFET of the signal readout circuit. In order to compensate for the effect of the positive potential, we tried to recombine the trapped holes with electrons via Fowler-Nordheim (FN) tunneling. By applying high voltage to the buried p-well (BPW) under the oxide layer with the MOSFET fixed at 0 V, electrons are injected into the BOX by FN tunneling. X-rays cause a negative shift in the threshold voltage Vth of the MOSFET. We can successfully recover Vth close to its pre-irradiation level after applying VBPW ≥ 120 V. However, the drain leakage current increased after applying VBPW; we find that this can be suppressed by applying a negative voltage to the BPW.

  2. Detector apparatus having a hybrid pixel-waveform readout system

    DOEpatents

    Meng, Ling-Jian

    2014-10-21

    A gamma ray detector apparatus comprises a solid state detector that includes a plurality of anode pixels and at least one cathode. The solid state detector is configured for receiving gamma rays during an interaction and inducing a signal in an anode pixel and in a cathode. An anode pixel readout circuit is coupled to the plurality of anode pixels and is configured to read out and process the induced signal in the anode pixel and provide triggering and addressing information. A waveform sampling circuit is coupled to the at least one cathode and configured to read out and process the induced signal in the cathode and determine energy of the interaction, timing of the interaction, and depth of interaction.

  3. Data encoding efficiency in pixel detector readout with charge information

    NASA Astrophysics Data System (ADS)

    Garcia-Sciveres, Maurice; Wang, Xinkang

    2016-04-01

    The average minimum number of bits needed for lossless readout of a pixel detector is calculated, in the regime of interest for particle physics where only a small fraction of pixels have a non-zero value per frame. This permits a systematic comparison of the readout efficiency of different encoding implementations. The calculation is compared to the number of bits used by the FE-I4 pixel readout chip of the ATLAS experiment.

  4. Single photon counting pixel detectors for synchrotron radiation experiments

    NASA Astrophysics Data System (ADS)

    Toyokawa, H.; Broennimann, Ch.; Eikenberry, E. F.; Henrich, B.; Kawase, M.; Kobas, M.; Kraft, P.; Sato, M.; Schmitt, B.; Suzuki, M.; Tanida, H.; Uruga, T.

    2010-11-01

    At the Paul Scherrer Institute PSI an X-ray single photon counting pixel detector (PILATUS) based on the hybrid-pixel detector technology was developed in collaboration with SPring-8. The detection element is a 320 or 450 μm thick silicon sensor forming pixelated pn-diodes with a pitch of 172 μm×172 μm. An array of 2×8 custom CMOS readout chips are indium bump-bonded to the sensor, which leads to 33.5 mm×83.8 mm detective area. Each pixel contains a charge-sensitive amplifier, a single level discriminator and a 20 bit counter. This design realizes a high dynamic range, short readout time of less than 3 ms, a high framing rate of over 200 images per second and an excellent point-spread function. The maximum counting rate achieves more than 2×10 6 X-rays/s/pixel.

  5. DAQ hardware and software development for the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Stramaglia, Maria Elena

    2016-07-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed readout hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the readout boards. The same boards will be used to upgrade the readout bandwidth for the two outermost barrel layers of the ATLAS Pixel Detector. We present the IBL readout hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel Detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  6. Challenges of small-pixel infrared detectors: a review

    NASA Astrophysics Data System (ADS)

    Rogalski, A.; Martyniuk, P.; Kopytko, M.

    2016-04-01

    In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology—HgCdTe material systems and III-V materials (mainly barrier detectors)—have been investigated.

  7. Beam test characterization of CMS silicon pixel detectors for the phase-1 upgrade

    NASA Astrophysics Data System (ADS)

    Korol, I.

    2015-10-01

    The Silicon Pixel Detector forms the innermost part of the CMS tracking system and is critical to track and vertex reconstruction. Being in close proximity to the beam interaction point, it is exposed to the highest radiation levels in the silicon tracker. In order to preserve the tracking performance with the LHC luminosity increase which is foreseen for the next years, the CMS collaboration has decided to build a new pixel detector with four barrel layers mounted around a reduced diameter beam pipe, as compared to the present three layer pixel detector in the central region. A new digital version of the front-end readout chip has been designed and tested; it has increased data buffering and readout link speed to maintain high efficiency at increasing occupancy. In addition, it offers lower charge thresholds that will improve the tracking efficiency and position resolution. Single chip modules have been evaluated in the DESY electron test beam in terms of charge collection, noise, tracking efficiency and position resolution before and after irradiation with 24 GeV protons from the CERN Proton Synchroton equivalent to the fluence expected after 500 fb-1 of integrated luminosity in the fourth layer of the pixel tracker. High efficiency and an excellent position resolution have been observed which are well maintained even after the proton irradiation. The results are well described by the CMS pixel detector simulation.

  8. Development of pixel detectors for SSC vertex tracking

    SciTech Connect

    Kramer, G. . Electro-Optical and Data Systems Group); Atlas, E.L.; Augustine, F.; Barken, O.; Collins, T.; Marking, W.L.; Worley, S.; Yacoub, G.Y. ) Shapiro, S.L. ); Arens, J.F.; Jernigan, J.G. . Space Sciences Lab.); Nygren,

    1991-04-01

    A description of hybrid PIN diode arrays and a readout architecture for their use as a vertex detector in the SSC environment is presented. Test results obtained with arrays having 256 {times} 256 pixels, each 30 {mu}m square, are also presented. The development of a custom readout for the SSC will be discussed, which supports a mechanism for time stamping hit pixels, storing their xy coordinates, and storing the analog information within the pixel. The peripheral logic located on the array, permits the selection of those pixels containing interesting data and their coordinates to be selectively read out. This same logic also resolves ambiguous pixel ghost locations and controls the pixel neighbor read out necessary to achieve high spatial resolution. The thermal design of the vertex tracker and the proposed signal processing architecture will also be discussed. 5 refs., 13 figs., 3 tabs.

  9. Fast neutron dosemeter using pixelated detector Timepix.

    PubMed

    Bulanek, Boris; Ekendahl, Daniela; Prouza, Zdenek

    2014-10-01

    A Timepix detector covered with polyethylene convertors of different thicknesses is presented as a fast neutron real-time dosemeter. The application of different weighting factors in connection with the position of a signal in a Timepix detector enables one to obtain an energy-dependent signal equal to neutron dose equivalents. A simulation of a Timepix detector covered with polyethylene convertors using monoenergetic neutrons is presented. The experimental set-up of a dosemeter was also produced. The first results of detector response using different fast neutron sources are presented.

  10. PIXSCAN: Pixel detector CT-scanner for small animal imaging

    NASA Astrophysics Data System (ADS)

    Delpierre, P.; Debarbieux, F.; Basolo, S.; Berar, J. F.; Bonissent, A.; Boudet, N.; Breugnon, P.; Caillot, B.; Cassol Brunner, F.; Chantepie, B.; Clemens, J. C.; Dinkespiler, B.; Khouri, R.; Koudobine, I.; Mararazzo, V.; Meessen, C.; Menouni, M.; Morel, C.; Mouget, C.; Pangaud, P.; Peyrin, F.; Rougon, G.; Sappey-Marinier, D.; Valton, S.; Vigeolas, E.

    2007-02-01

    The PIXSCAN is a small animal CT-scanner based on hybrid pixel detectors. These detectors provide very large dynamic range of photons counting at very low detector noise. They also provide high counting rates with fast image readout. Detection efficiency can be optimized by selecting the sensor medium according to the working energy range. Indeed, the use of CdTe allows a detection efficiency of 100% up to 50 keV. Altogether these characteristics are expected to improve the contrast of the CT-scanner, especially for soft tissues, and to reduce both the scan duration and the absorbed dose. A proof of principle has been performed by assembling into a PIXSCAN-XPAD2 prototype the photon counting pixel detector initially built for detection of X-ray synchrotron radiations. Despite the relatively large pixel size of this detector (330×330 μm 2), we can present three-dimensional tomographic reconstruction of mice at good contrast and spatial resolution. A new photon counting chip (XPAD3) is designed in sub-micronique technology to achieve 130×130 μm 2 pixels. This improved circuit has been equipped with an energy selection circuit to act as a band-pass emission filter. Furthermore, the PIXSCAN-XPAD3 hybrid pixel detectors will be combined with the Lausanne ClearPET scanner demonstrator. CT image reconstruction in this non-conventional geometry is under study for this purpose.

  11. The BTeV pixel detector and trigger system

    SciTech Connect

    Simon Kwan

    2002-12-03

    BTeV is an approved forward collider experiment at the Fermilab Tevatron dedicated to the precision studies of CP violation, mixing, and rare decays of beauty and charm hadrons. The BTeV detector has been designed to achieve these goals. One of the unique features of BTeV is a state-of-the-art pixel detector system, designed to provide accurate measurements of the decay vertices of heavy flavor hadrons that can be used in the first trigger level. The pixel vertex detector and the trigger design are described. Recent results on some of the achievements in the R and D effort are presented.

  12. Sensor design for the ATLAS-pixel detector

    NASA Astrophysics Data System (ADS)

    Rohe, T.; Hügging, F.; Lutz, G.; Richter, R. H.; Wunstorf, R.

    1998-02-01

    The inner detector of the ATLAS experiment will contain three layers of pixel detectors. The first prototype of the sensor part will be an n +n-device in order to allow partial depleted operation after bulk inversion and a guard-ring scheme keeping the entire detector surface close to the electronic chip on ground potential. Further, a bias structure is introduced providing testability of the sensors before mounting them to the electronics. The design of the single pixel cell is the result of a detailed device simulation study.

  13. Hybrid Pixel Detectors for gamma/X-ray imaging

    NASA Astrophysics Data System (ADS)

    Hatzistratis, D.; Theodoratos, G.; Zografos, V.; Kazas, I.; Loukas, D.; Lambropoulos, C. P.

    2015-09-01

    Hybrid pixel detectors are made by direct converting high-Z semi-insulating single crystalline material coupled to complementary-metal-oxide semiconductor (CMOS) readout electronics. They are attractive because direct conversion exterminates all the problems of spatial localization related to light diffusion, energy resolution, is far superior from the combination of scintillation crystals and photomultipliers and lithography can be used to pattern electrodes with very fine pitch. We are developing 2-D pixel CMOS ASICs, connect them to pixilated CdTe crystals with the flip chip and bump bonding method and characterize the hybrids. We have designed a series of circuits, whose latest member consists of a 50×25 pixel array with 400um pitch and an embedded controller. In every pixel a full spectroscopic channel with time tagging information has been implemented. The detectors are targeting Compton scatter imaging and they can be used for coded aperture imaging too. Hybridization using CMOS can overcome the limit put on pixel circuit complexity by the use of thin film transistors (TFT) in large flat panels. Hybrid active pixel sensors are used in dental imaging and other applications (e.g. industrial CT etc.). Thus X-ray imaging can benefit from the work done on dynamic range enhancement methods developed initially for visible and infrared CMOS pixel sensors. A 2-D CMOS ASIC with 100um pixel pitch to demonstrate the feasibility of such methods in the context of X-ray imaging has been designed.

  14. Building Detector Modules for the (S)CMS Pixel Barrel Detector

    NASA Astrophysics Data System (ADS)

    König, S.; PSI Pixel Group

    2009-12-01

    For the barrel part of the CMS pixel tracker about 800 silicon pixel detector modules are required. The modules are bump bonded, assembled and tested at the Paul Scherrer Institute. This article gives the production results of the module assembly for the CMS experiment and shows the evolution of the barrel pixel module design for the first phase of the LHC luminosity upgrade.

  15. Impact of CT detector pixel-to-pixel crosstalk on image quality

    NASA Astrophysics Data System (ADS)

    Engel, Klaus J.; Spies, Lothar; Vogtmeier, Gereon; Luhta, Randy

    2006-03-01

    In Computed Tomography (CT), the image quality sensitively depends on the accuracy of the X-ray projection signal, which is acquired by a two-dimensional array of pixel cells in the detector. If the signal of X-ray photons is spread out to neighboring pixels (crosstalk), a decrease of spatial resolution may result. Moreover, streak and ring artifacts may emerge. Deploying system simulations for state-of-the-art CT detector configurations, we characterize origin and appearance of these artifacts in the reconstructed CT images for different scenarios. A uniform pixel-to-pixel crosstalk results in a loss of spatial resolution only. The Modulation Transfer Function (MTF) is attenuated, without affecting the limiting resolution, which is defined as the first zero of the MTF. Additional streak and ring artifacts appear, if the pixel-to-pixel crosstalk is non-uniform. Parallel to the system simulations we developed an analytical model. The model explains resolution loss and artifact level using the first and second derivative of the X-ray profile acquired by the detector. Simulations and analytical model are in agreement to each other. We discuss the perceptibility of ring and streak artifacts within noisy images if no crosstalk correction is applied.

  16. Development of prototype pixellated PIN CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Narita, Tomohiko; Bloser, Peter F.; Grindlay, Jonathan E.; Sudharsanan, R.; Reiche, C.; Stenstrom, Claudia

    1998-07-01

    We report initial results from the design and evaluation of two pixellated PIN Cadmium Zinc Telluride detectors and an ASIC-based readout system. The prototype imaging PIN detectors consist of 4 X 4 1.5 mm square indium anode contacts with 0.2 mm spacing and a solid cathode plane on 10 X 10 mm CdZnTe substrates of thickness 2 mm and 5 mm. The detector readout system, based on low noise preamplifier ASICs, allows for parallel readout of all channels upon cathode trigger. This prototype is under development for use in future astrophysical hard X-ray imagers with 10 - 600 keV energy response. Measurements of the detector uniformity, spatial resolution, and spectral resolution will be discussed and compared with a similar pixellated MSM detector. Finally, a prototype design for a large imaging array is outlined.

  17. Leakage current measurements of a pixelated polycrystalline CVD diamond detector

    NASA Astrophysics Data System (ADS)

    Zain, R. M.; Maneuski, D.; O'Shea, V.; Bates, R.; Blue, A.; Cunnigham, L.; Stehl, C.; Berderman, E.; Rahim, R. A.

    2013-01-01

    Diamond has several desirable features when used as a material for radiation detection. With the invention of synthetic growth techniques, it has become feasible to look at developing diamond radiation detectors with reasonable surface areas. Polycrystalline diamond has been grown using a chemical vapour deposition (CVD) technique by the University of Augsburg and detector structures fabricated at the James Watt Nanofabrication Centre (JWNC) in the University of Glasgow in order to produce pixelated detector arrays. The anode and cathode contacts are realised by depositing gold to produce ohmic contacts. Measurements of I-V characteristics were performed to study the material uniformity. The bias voltage is stepped from -1000V to 1000V to investigate the variation of leakage current from pixel to pixel. Bulk leakage current is measured to be less than 1nA.

  18. Calibration analysis software for the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Stramaglia, Maria Elena

    2016-07-01

    The calibration of the ATLAS Pixel Detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel Detector scans and analyses is called calibration console. The introduction of a new layer, equipped with new FE-I4 chips, required an update of the console architecture. It now handles scans and scan analyses applied together to chips with different characteristics. An overview of the newly developed calibration analysis software will be presented, together with some preliminary results.

  19. Polycrystalline CVD diamond pixel array detector for nuclear particles monitoring

    NASA Astrophysics Data System (ADS)

    Pacilli, M.; Allegrini, P.; Girolami, M.; Conte, G.; Spiriti, E.; Ralchenko, V. G.; Komlenok, M. S.; Khomic, A. A.; Konov, V. I.

    2013-02-01

    We report the 90Sr beta response of a polycrystalline diamond pixel detector fabricated using metal-less graphitic ohmic contacts. Laser induced graphitization was used to realize multiple squared conductive contacts with 1mm × 1mm area, 0.2 mm apart, on one detector side while on the other side, for biasing, a 9mm × 9mm large graphite contact was realized. A proximity board was used to wire bonding nine pixels at a time and evaluate the charge collection homogeneity among the 36 detector pixels. Different configurations of biasing were experimented to test the charge collection and noise performance: connecting the pixel at the ground potential of the charge amplifier led to best results and minimum noise pedestal. The expected exponential trend typical of beta particles has been observed. Reversing the bias polarity the pulse height distribution (PHD) does not changes and signal saturation of any pixel was observed around ±200V (0.4 V/μm). Reasonable pixels response uniformity has been evidenced even if smaller pitch 50÷100 μm structures need to be tested.

  20. Pixel detectors in 3D technologies for high energy physics

    SciTech Connect

    Deptuch, G.; Demarteau, M.; Hoff, J.; Lipton, R.; Shenai, A.; Yarema, R.; Zimmerman, T.; /Fermilab

    2010-10-01

    This paper reports on the current status of the development of International Linear Collider vertex detector pixel readout chips based on multi-tier vertically integrated electronics. Initial testing results of the VIP2a prototype are presented. The chip is the second embodiment of the prototype data-pushed readout concept developed at Fermilab. The device was fabricated in the MIT-LL 0.15 {micro}m fully depleted SOI process. The prototype is a three-tier design, featuring 30 x 30 {micro}m{sup 2} pixels, laid out in an array of 48 x 48 pixels.

  1. Uncooled infrared detectors toward smaller pixel pitch with newly proposed pixel structure

    NASA Astrophysics Data System (ADS)

    Tohyama, Shigeru; Sasaki, Tokuhito; Endoh, Tsutomu; Sano, Masahiko; Katoh, Kouji; Kurashina, Seiji; Miyoshi, Masaru; Yamazaki, Takao; Ueno, Munetaka; Katayama, Haruyoshi; Imai, Tadashi

    2011-06-01

    Since authors have successfully demonstrated uncooled infrared (IR) focal plane array (FPA) with 23.5 um pixel pitch, it has been widely utilized for commercial applications such as thermography, security camera and so on. One of the key issues for uncooled IR detector technology is to shrink the pixel size. The smaller the pixel pitch, the more the IR camera products become compact and the less cost. This paper proposes a new pixel structure with a diaphragm and beams which are placed in different level, to realize an uncooled IRFPA with smaller pixel pitch )<=17 μm). The upper level consists of diaphragm with VOx bolometer and IR absorber layers, while the lower level consists of the two beams, which are designed to place on the adjacent pixels. The test devices of this pixel design with 12 um, 15 um and 17 um pitch have been fabricated on the Si ROIC of QVGA (320 × 240) with 23.5 um pitch. Their performances reveal nearly equal to the IRFPA with 23.5 um pitch. For example, noise equivalent temperature difference (NETD) of 12 μm pixel is 63.1 mK with thermal time constant of 14.5 msec. In addition, this new structure is expected to be more effective for the existing IRFPA with 23.5 um pitch in order to improve the IR responsivity.

  2. Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

    SciTech Connect

    Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-28

    The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

  3. The BTeV pixel and microstrip detector

    SciTech Connect

    Simon W Kwan

    2003-06-04

    The BTeV pixel detector is one of the most crucial elements in the BTeV experiment. While the pixel detector is technically challenging, we have made great progress towards identifying viable solutions for individual components of the system. The forward silicon tracker is based on more mature technology and its design has benefited from the experience of other experiments. Nevertheless, we have started an R&D program on the forward silicon tracker and first results are expected some time next year.

  4. Novel integrated CMOS pixel structures for vertex detectors

    SciTech Connect

    Kleinfelder, Stuart; Bieser, Fred; Chen, Yandong; Gareus, Robin; Matis, Howard S.; Oldenburg, Markus; Retiere, Fabrice; Ritter, Hans Georg; Wieman, Howard H.; Yamamoto, Eugene

    2003-10-29

    Novel CMOS active pixel structures for vertex detector applications have been designed and tested. The overriding goal of this work is to increase the signal to noise ratio of the sensors and readout circuits. A large-area native epitaxial silicon photogate was designed with the aim of increasing the charge collected per struck pixel and to reduce charge diffusion to neighboring pixels. The photogate then transfers the charge to a low capacitance readout node to maintain a high charge to voltage conversion gain. Two techniques for noise reduction are also presented. The first is a per-pixel kT/C noise reduction circuit that produces results similar to traditional correlated double sampling (CDS). It has the advantage of requiring only one read, as compared to two for CDS, and no external storage or subtraction is needed. The technique reduced input-referred temporal noise by a factor of 2.5, to 12.8 e{sup -}. Finally, a column-level active reset technique is explored that suppresses kT/C noise during pixel reset. In tests, noise was reduced by a factor of 7.6 times, to an estimated 5.1 e{sup -} input-referred noise. The technique also dramatically reduces fixed pattern (pedestal) noise, by up to a factor of 21 in our tests. The latter feature may possibly reduce pixel-by-pixel pedestal differences to levels low enough to permit sparse data scan without per-pixel offset corrections.

  5. Overview of the BTeV Pixel Detector

    SciTech Connect

    Jeffrey A Appel

    2002-12-10

    BTeV is a new Fermilab beauty and charm experiment designed to operate in the CZero region of the Tevatron collider. Critical to the success of BTeV is its pixel detector. The unique features of this pixel detector include its proximity to the beam, its operation with a beam crossing time of 132 ns, and the need for the detector information to be read out quickly enough to be used for the lowest level trigger. This talk presents an overview of the pixel detector design, giving the motivations for the technical choices made. The status of the current R&D on detector components is also reviewed. Additional Pixel 2002 talks on the BTeV pixel detector are given by Dave Christian[1], Mayling Wong[2], and Sergio Zimmermann[3]. Table 1 gives a selection of pixel detector parameters for the ALICE, ATLAS, BTeV, and CMS experiments. Comparing the progression of this table, which I have been updating for the last several years, has shown a convergence of specifications. Nevertheless, significant differences endure. The BTeV data-driven readout, horizontal and vertical position resolution better than 9 {micro}m with the {+-} 300 mr forward acceptance, and positioning in vacuum and as close as 6 mm from the circulating beams remain unique. These features are driven by the physics goals of the BTeV experiment. Table 2 demonstrates that the vertex trigger performance made possible by these features is requisite for a very large fraction of the B meson decay physics which is so central to the motivation for BTeV. For most of the physics quantities of interest listed in the table, the vertex trigger is essential. The performance of the BTeV pixel detector may be summarized by looking at particular physics examples; e.g., the B{sub s} meson decay B{sub s} {yields} D{sub s}{sup -} K{sup +}. For that decay, studies using GEANT3 simulations provide quantitative measures of performance. For example, the separation between the B{sub s} decay point and the primary proton

  6. CMOS Hybrid Pixel Detectors for Scientific, Industrial and Medical Applications

    NASA Astrophysics Data System (ADS)

    Broennimann, Christian

    2009-03-01

    Crystallography is the principal technique for determining macromolecular structures at atomic resolution and uses advantageously the high intensity of 3rd generation synchrotron X-ray sources . Macromolecular crystallography experiments benefit from excellent beamline equipment, recent software advances and modern X-ray detectors. However, the latter do not take full advantage of the brightness of modern synchrotron sources. CMOS Hybrid pixel array detectors, originally developed for high energy physics experiments, meet these requirements. X-rays are recorded in single photon counting mode and data thus are stored digitally at the earliest possible stage. This architecture leads to several advantages over current detectors: No detector noise is added to the signal. Readout time is reduced to a few milliseconds. The counting rates are matched to beam intensities at protein crystallography beamlines at 3rd generation synchrotrons. The detector is not sensitive to X-rays during readout; therefore no mechanical shutter is required. The detector has a very sharp point spread function (PSF) of one pixel, which allows better resolution of adjacent reflections. Low energy X-rays can be suppressed by the comparator At the Paul Scherrer Institute (PSI) in Switzerland the first and largest array based on this technology was constructed: The Pilatus 6M detector. The detector covers an area of 43.1 x 44.8 cm2 , has 6 million pixels and is read out noise free in 3.7 ms. Since June 2007 the detector is in routine operation at the beamline 6S of the Swiss Light Source (SLS). The company DETCRIS Ltd, has licensed the technology from PSI and is commercially offering the PILATUS detectors. Examples of the wide application range of the detectors will be shown.

  7. Design Methodology: ASICs with complex in-pixel processing for Pixel Detectors

    SciTech Connect

    Fahim, Farah

    2014-10-31

    The development of Application Specific Integrated Circuits (ASIC) for pixel detectors with complex in-pixel processing using Computer Aided Design (CAD) tools that are, themselves, mainly developed for the design of conventional digital circuits requires a specialized approach. Mixed signal pixels often require parasitically aware detailed analog front-ends and extremely compact digital back-ends with more than 1000 transistors in small areas below 100μm x 100μm. These pixels are tiled to create large arrays, which have the same clock distribution and data readout speed constraints as in, for example, micro-processors. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout.

  8. Study of indium and solder bumps for the BTeV Pixel Detector

    SciTech Connect

    Simon W Kwan et al.

    2003-11-05

    The pixel detector proposed for the BTeV experiment at the Fermilab Tevatron will use bump-bonding technology based on either Indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have studied the strength of the bumps by visual inspection of the bumps bonding silicon sensor modules to dummy chips made out of glass. The studies were done before and after thermal cycles, exposed to intense irradiation, and with the assemblies glued to a graphite substrate. We have also carried out studies on effects of temperature changes on both types of bump bonds by observing the responses of single-chip pixel detectors to an Sr{sup 90} source. We report the results from these studies and our plan to measure the effect of cryogenic temperatures on the bumps.

  9. Precision tracking with a single gaseous pixel detector

    NASA Astrophysics Data System (ADS)

    Tsigaridas, S.; van Bakel, N.; Bilevych, Y.; Gromov, V.; Hartjes, F.; Hessey, N. P.; de Jong, P.; Kluit, R.

    2015-09-01

    The importance of micro-pattern gaseous detectors has grown over the past few years after successful usage in a large number of applications in physics experiments and medicine. We develop gaseous pixel detectors using micromegas-based amplification structures on top of CMOS pixel readout chips. Using wafer post-processing we add a spark-protection layer and a grid to create an amplification region above the chip, allowing individual electrons released above the grid by the passage of ionising radiation to be recorded. The electron creation point is measured in 3D, using the pixel position for (x, y) and the drift time for z. The track can be reconstructed by fitting a straight line to these points. In this work we have used a pixel-readout-chip which is a small-scale prototype of Timepix3 chip (designed for both silicon and gaseous detection media). This prototype chip has several advantages over the existing Timepix chip, including a faster front-end (pre-amplifier and discriminator) and a faster TDC which reduce timewalk's contribution to the z position error. Although the chip is very small (sensitive area of 0.88 × 0.88mm2), we have built it into a detector with a short drift gap (1.3 mm), and measured its tracking performance in an electron beam at DESY. We present the results obtained, which lead to a significant improvement for the resolutions with respect to Timepix-based detectors.

  10. Experimental tests of a hybrid pixellated detector for gamma imaging

    NASA Astrophysics Data System (ADS)

    Gal, O.; Mikulec, B.; Million, M.

    2001-03-01

    In the framework of the MEDIPIX Collaboration, a hybrid pixel detector has been developed primarily for X-ray radiography. This detector consists of a 64×64 pixel photon counting chip (PCC), bump bonded to a 200 μm thick GaAs substrate. The PCC is optimised for energy depositions in the range of a few keV to a few tens of keV. The aim of this study is to evaluate the detector for applications in decommissioning of nuclear power plants where typical sources have energies in range of a few hundred keV. Tests were realised using a 137Cs gamma source (660 keV). At this energy, Monte-Carlo simulations predict that, on average, for more than 60% of primary interactions, there is at least one pixel on which the deposited energy exceeds 100 keV. Simulations also allow modelling of the spatial energy spreading. The comparison of the simulation results with experimental data should indicate if there is a significant contribution of electrical cross-coupling between pixels to the cluster size of the detected hits. The results obtained demonstrate promising perspectives for this kind of detector towards gamma imaging applications.

  11. Large format, small pixel pitch and hot detectors at SOFRADIR

    NASA Astrophysics Data System (ADS)

    Reibel, Y.; Rouvie, A.; Nedelcu, A.; Augey, T.; Pere-Laperne, N.; Rubaldo, L.; Billon-Lanfrey, D.; Gravrand, O.; Rothman, J.; Destefanis, G.

    2013-10-01

    Recently Sofradir joined a very small circle of IR detector manufacturers with expertise every aspect of the cooled and uncooled IR technologies, all under one roof by consolidating all IR technologies available in France. These different technologies are complementary and are used depending of the needs of the applications mainly concerning the detection range needs as well as their ability to detect in bad weather environmental conditions. SNAKE (InGaAs) and SCORPIO LW (MCT) expand Sofradir's line of small pixel pitch TV format IR detectors from the mid-wavelength to the short and long wavelengths. Our dual band MW-LW QWIP detectors (25μm, 384×288 pixels) benefit to tactical platforms giving an all-weather performance and increasing flexibility in the presence of battlefield obscurants. In parallel we have been pursuing further infrared developments on future MWIR detectors, such as the VGA format HOT detector that consumes 2W and the 10μm pitch IR detector which gives us a leading position in innovation. These detectors are designed for long-range surveillance equipment, commander or gunner sights, ground-to-ground missile launchers and other applications that require higher resolution and sensitivity to improve reconnaissance and target identification. This paper discusses the system level performance in each detector type.

  12. Prototype pixel optohybrid for the CMS phase 1 upgraded pixel detector

    NASA Astrophysics Data System (ADS)

    Troska, J.; Detraz, S.; El Nasr-Storey, S. S.; Stejskal, P.; Sigaud, C.; Soos, C.; Vasey, F.

    2012-01-01

    The CMS Pixel detector phase 1 upgrade calls for an optical readout system operating digitally at or above 320 Mb/s. Since the re-use of the existing link components as installed is excluded, we have designed a new Pixel Optohybrid (POH) for use within this system. We report on the design and choice of components as well as their measured performance. In particular, we have studied the impact upon error-free link operation of the way the data are encoded before being transmitted over the link. We have thus demonstrated the feasibility of operating the new POH within the upgraded readout system.

  13. High frame rate measurements of semiconductor pixel detector readout IC

    NASA Astrophysics Data System (ADS)

    Szczygiel, R.; Grybos, P.; Maj, P.

    2012-07-01

    We report on high count rate and high frame rate measurements of a prototype IC named FPDR90, designed for readouts of hybrid pixel semiconductor detectors used for X-ray imaging applications. The FPDR90 is constructed in 90 nm CMOS technology and has dimensions of 4 mm×4 mm. Its main part is a matrix of 40×32 pixels with 100 μm×100 μm pixel size. The chip works in the single photon counting mode with two discriminators and two 16-bit ripple counters per pixel. The count rate per pixel depends on the effective CSA feedback resistance and can be set up to 6 Mcps. The FPDR90 can operate in the continuous readout mode, with zero dead time. Due to the architecture of digital blocks in pixel, one can select the number of bits read out from each counter from 1 to 16. Because in the FPDR90 prototype only one data output is available, the frame rate is 9 kfps and 72 kfps for 16 bits and 1 bit readout, respectively (with nominal clock frequency of 200 MHz).

  14. Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

    NASA Astrophysics Data System (ADS)

    Onodera, T.; Hitomi, K.; Shoji, T.; Hiratate, Y.

    2004-06-01

    Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI 2. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm 3). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI 2. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3×3 pixellated anodes (0.57×0.57 mm 2 each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with 241Am (59.5 keV), 57Co (122 keV) and 137Cs (662 keV) gamma-ray sources at temperature of -20°C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

  15. Modeling of Pixelated Detector in SPECT Pinhole Reconstruction

    PubMed Central

    Feng, Bing; Zeng, Gengsheng L.

    2014-01-01

    A challenge for the pixelated detector is that the detector response of a gamma-ray photon varies with the incident angle and the incident location within a crystal. The normalization map obtained by measuring the flood of a point-source at a large distance can lead to artifacts in reconstructed images. In this work, we investigated a method of generating normalization maps by ray-tracing through the pixelated detector based on the imaging geometry and the photo-peak energy for the specific isotope. The normalization is defined for each pinhole as the normalized detector response for a point-source placed at the focal point of the pinhole. Ray-tracing is used to generate the ideal flood image for a point-source. Each crystal pitch area on the back of the detector is divided into 60 × 60 sub-pixels. Lines are obtained by connecting between a point-source and the centers of sub-pixels inside each crystal pitch area. For each line ray-tracing starts from the entrance point at the detector face and ends at the center of a sub-pixel on the back of the detector. Only the attenuation by NaI(Tl) crystals along each ray is assumed to contribute directly to the flood image. The attenuation by the silica (SiO2) reflector is also included in the ray-tracing. To calculate the normalization for a pinhole, we need to calculate the ideal flood for a point-source at 360 mm distance (where the point-source was placed for the regular flood measurement) and the ideal flood image for the point-source at the pinhole focal point, together with the flood measurement at 360 mm distance. The normalizations are incorporated in the iterative OSEM reconstruction as a component of the projection matrix. Applications to single-pinhole and multi-pinhole imaging showed that this method greatly reduced the reconstruction artifacts. PMID:25574058

  16. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  17. Characterization of indium and solder bump bonding for pixel detectors

    SciTech Connect

    Selcuk Cihangir and Simon Kwan

    2000-09-28

    A review of different bump-bonding processes used for pixel detectors is given. A large scale test on daisy-chained components from two vendors has been carried out at Fermilab to characterize the yield of these processes. The vendors are Advanced Interconnect Technology Ltd. (AIT) of Hong Kong and MCNC in North Carolina, US. The results from this test are presented and technical challenges encountered are discussed.

  18. Pixel diamond detectors for excimer laser beam diagnostics

    NASA Astrophysics Data System (ADS)

    Girolami, M.; Allegrini, P.; Conte, G.; Salvatori, S.

    2011-05-01

    Laser beam profiling technology in the UV spectrum of light is evolving with the increase of excimer lasers and lamps applications, that span from lithography for VLSI circuits to eye surgery. The development of a beam-profiler, able to capture the excimer laser single pulse and process the acquired pixel current signals in the time period between each pulse, is mandatory for such applications. 1D and 2D array detectors have been realized on polycrystalline CVD diamond specimens. The fast diamond photoresponse, in the ns time regime, suggests the suitability of such devices for fine tuning feedback of high-power pulsed-laser cavities, whereas solar-blindness guarantees high performance in UV beam diagnostics, also under high intensity background illumination. Offering unique properties in terms of thermal conductivity and visible-light transparency, diamond represents one of the most suitable candidate for the detection of high-power UV laser emission. The relatively high resistivity of diamond in the dark has allowed the fabrication of photoconductive vertical pixel-detectors. A semitransparent light-receiving back-side contact has been used for detector biasing. Each pixel signal has been conditioned by a multi-channel read-out electronics made up of a high-sensitive integrator and a Σ-Δ A/D converter. The 500 μs conversion time has allowed a data acquisition rate up to 2 kSPS (Sample Per Second).

  19. Small-Scale Readout Systems Prototype for the STAR PIXEL Detector

    SciTech Connect

    Szelezniak, Michal A.; Besson, Auguste; Colledani, Claude; Dorokhov, Andrei; Dulinski, Wojciech; Greiner, Leo C.; Himmi, Abdelkader; Hu, Christine; Matis, Howard S.; Ritter, Hans Georg; Rose, Andrew; Shabetai, Alexandre; Stezelberger, Thorsten; Sun, Xiangming; Thomas, Jim H.; Valin, Isabelle; Vu, Chinh Q.; Wieman, Howard H.; Winter, Marc

    2008-10-01

    A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in a commercial CMOS process that integrates the detector and front-end electronics layers in one silicon die. Two generations ofMAPS prototypes designed specifically for the PIXEL are discussed. We have constructed a prototype telescope system consisting of three small MAPS sensors arranged in three parallel and coaxial planes with a readout system based on the readout architecture for PIXEL. This proposed readout architecture is simple and scales to the size required to readout the final detector. The real-time hit finding algorithm necessary for data rate reduction in the 400 million pixel detector is described, and aspects of the PIXEL system integration into the existing STAR framework are addressed. The complete system has been recently tested and shown to be fully functional.

  20. 3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

    SciTech Connect

    Micelli, A.; Helle, K.; Sandaker, H.; Stugu, B.; Barbero, M.; Hugging, F.; Karagounis, M.; Kostyukhin, V.; Kruger, H.; Tsung, J.W.; Wermes, N.; Capua, M.; Fazio, S.; Mastroberardino, A.; Susinno, G.; Gallrapp, C.; Di Girolamo, B.; Dobos, D.; La Rosa, A.; Pernegger, H.; Roe, S.; /CERN /Prague, Tech. U. /Prague, Tech. U. /Freiburg U. /Freiburg U. /Freiburg U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /Glasgow U. /Glasgow U. /Glasgow U. /Hawaii U. /Barcelona, IFAE /Barcelona, IFAE /LBL, Berkeley /Barcelona, IFAE /LBL, Berkeley /LBL, Berkeley /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /New Mexico U. /New Mexico U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SUNY, Stony Brook /SUNY, Stony Brook /SUNY, Stony Brook /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /VTT Electronics, Espoo /VTT Electronics, Espoo

    2012-04-30

    The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

  1. A semiconductor radiation imaging pixel detector for space radiation dosimetry

    NASA Astrophysics Data System (ADS)

    Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

    2015-07-01

    Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented.

  2. A semiconductor radiation imaging pixel detector for space radiation dosimetry.

    PubMed

    Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

    2015-07-01

    Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented. PMID:26256630

  3. Monolithic pixel detectors with 0.2 μm FD-SOI pixel process technology

    NASA Astrophysics Data System (ADS)

    Miyoshi, Toshinobu; Arai, Yasuo; Chiba, Tadashi; Fujita, Yowichi; Hara, Kazuhiko; Honda, Shunsuke; Igarashi, Yasushi; Ikegami, Yoichi; Ikemoto, Yukiko; Kohriki, Takashi; Ohno, Morifumi; Ono, Yoshimasa; Shinoda, Naoyuki; Takeda, Ayaki; Tauchi, Kazuya; Tsuboyama, Toru; Tadokoro, Hirofumi; Unno, Yoshinobu; Yanagihara, Masashi

    2013-12-01

    Truly monolithic pixel detectors were fabricated with 0.2 μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We can choose the handle wafer and therefore high-resistivity silicon is also available. Double SOI (D-SOI) wafers fabricated from Czochralski (CZ)-SOI wafers were newly obtained and successfully processed in 2012. The top SOI layers are used as electric circuits and the middle SOI layers used as a shield layer against the back-gate effect and cross-talk between sensors and CMOS circuits, and as an electrode to compensate for the total ionizing dose (TID) effect. In 2012, we developed two SOI detectors, INTPIX5 and INTPIX3g. A spatial resolution study was done with INTPIX5 and it showed excellent performance. The TID effect study with D-SOI INTPIX3g detectors was done and we confirmed improvement of TID tolerance in D-SOI sensors.

  4. Heavily irradiated N-in-p thin planar pixel sensors with and without active edges

    NASA Astrophysics Data System (ADS)

    Terzo, S.; Andricek, L.; Macchiolo, A.; Moser, H. G.; Nisius, R.; Richter, R. H.; Weigell, P.

    2014-05-01

    We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 μm, produced at MPP/HLL, and 100-200 μm thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 μm thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4 × 1015 neq/cm2, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5 × 1015 neq/cm2 has been performed using radioactive sources in the laboratory.

  5. Position-Sensitive Nuclear Spectroscopy with Pixel Detectors

    SciTech Connect

    Granja, Carlos; Vykydal, Zdenek; Jakubek, Jan; Pospisil, Stanislav

    2007-10-26

    State-of-the-art hybrid semiconductor pixel detectors such as Medipix2 are suitable for energy- and position-sensitive nuclear spectroscopy. In addition to excellent energy- and spatial-resolution, these devices can operate in spectroscopic, single-quantum counting and/or on-line tracking mode. A devoted compact USB-readout interface provides functionality and ease of operation. The compact and versatile Medipix2/USB radiation camera provides visualization, vacuum and room-temperature operation as a real-time portable active nuclear emulsion.

  6. Monolithic pixel detectors in a deep submicron SOI process

    SciTech Connect

    Deptuch, Grzegorz; /Fermilab

    2009-10-01

    A compact charge-signal processing chain, composed of a two-stage semi-gaussian preamplifier-signal shaping filter, a discriminator and a binary counter, implemented in a prototype pixel detector using 0.20 {micro}m CMOS Silicon on Insulator process, is presented. The gain of the analog chain was measured 0.76 V/fC at the signal peaking time about 300 ns and the equivalent noise charge referred to the input of 80 e{sup -1}.

  7. Simulation of the dynamic inefficiency of the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Bartók, M.

    2015-05-01

    The Pixel Detector is the innermost part of the CMS Tracker. It therefore has to prevail in the harshest environment in terms of particle fluence and radiation. There are several mechanisms that may decrease the efficiency of the detector. These are mainly caused by data acquisition (DAQ) problems and/or Single Event Upsets (SEU). Any remaining efficiency loss is referred to as the dynamic inefficiency. It is caused by various mechanisms inside the Readout Chip (ROC) and depends strongly on the data occupancy. In the 2012 data, at high values of instantaneous luminosity the inefficiency reached 2% (in the region closest to the interaction point) which is not negligible. In the 2015 run higher instantaneous luminosity is expected, which will result in lower efficiencies; therefore this effect needs to be understood and simulated. A data-driven method has been developed to simulate dynamic inefficiency, which has been shown to successfully simulate the effects.

  8. 3D silicon pixel detectors for the ATLAS Forward Physics experiment

    NASA Astrophysics Data System (ADS)

    Lange, J.; Cavallaro, E.; Grinstein, S.; López Paz, I.

    2015-03-01

    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 μm width for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors. It is studied if these requirements can be met using slightly-modified FE-I4 3D pixel sensors from the ATLAS Insertable B-Layer production. AFP-compatible slim edges are obtained with a simple diamond-saw cut. Electrical characterisations and beam tests are carried out and no detrimental impact on the leakage current and hit efficiency is observed. For devices without a 3D guard ring a remaining insensitive edge of less than 15 μm width is found. Moreover, 3D detectors are non-uniformly irradiated up to fluences of several 1015 neq/cm2 with either a focussed 23 GeV proton beam or a 23 MeV proton beam through holes in Al masks. The efficiency in the irradiated region is found to be similar to the one in the non-irradiated region and exceeds 97% in case of favourable chip-parameter settings. Only in a narrow transition area at the edge of the hole in the Al mask, a significantly lower efficiency is seen. A follow-up study of this effect using arrays of small pad diodes for position-resolved dosimetry via the leakage current is carried out.

  9. Pixelated transmission-mode diamond X-ray detector

    PubMed Central

    Zhou, Tianyi; Ding, Wenxiang; Gaowei, Mengjia; De Geronimo, Gianluigi; Bohon, Jen; Smedley, John; Muller, Erik

    2015-01-01

    Fabrication and testing of a prototype transmission-mode pixelated diamond X-ray detector (pitch size 60–100 µm), designed to simultaneously measure the flux, position and morphology of an X-ray beam in real time, are described. The pixel density is achieved by lithographically patterning vertical stripes on the front and horizontal stripes on the back of an electronic-grade chemical vapor deposition single-crystal diamond. The bias is rotated through the back horizontal stripes and the current is read out on the front vertical stripes at a rate of ∼1 kHz, which leads to an image sampling rate of ∼30 Hz. This novel signal readout scheme was tested at beamline X28C at the National Synchrotron Light Source (white beam, 5–15 keV) and at beamline G3 at the Cornell High Energy Synchrotron Source (monochromatic beam, 11.3 keV) with incident beam flux ranges from 1.8 × 10−2 to 90 W mm−2. Test results show that the novel detector provides precise beam position (positional noise within 1%) and morphology information (error within 2%), with an additional software-controlled single channel mode providing accurate flux measurement (fluctuation within 1%). PMID:26524304

  10. Pixelated transmission-mode diamond X-ray detector.

    PubMed

    Zhou, Tianyi; Ding, Wenxiang; Gaowei, Mengjia; De Geronimo, Gianluigi; Bohon, Jen; Smedley, John; Muller, Erik

    2015-11-01

    Fabrication and testing of a prototype transmission-mode pixelated diamond X-ray detector (pitch size 60-100 µm), designed to simultaneously measure the flux, position and morphology of an X-ray beam in real time, are described. The pixel density is achieved by lithographically patterning vertical stripes on the front and horizontal stripes on the back of an electronic-grade chemical vapor deposition single-crystal diamond. The bias is rotated through the back horizontal stripes and the current is read out on the front vertical stripes at a rate of ∼ 1 kHz, which leads to an image sampling rate of ∼ 30 Hz. This novel signal readout scheme was tested at beamline X28C at the National Synchrotron Light Source (white beam, 5-15 keV) and at beamline G3 at the Cornell High Energy Synchrotron Source (monochromatic beam, 11.3 keV) with incident beam flux ranges from 1.8 × 10(-2) to 90 W mm(-2). Test results show that the novel detector provides precise beam position (positional noise within 1%) and morphology information (error within 2%), with an additional software-controlled single channel mode providing accurate flux measurement (fluctuation within 1%).

  11. The pixel detector for the CMS phase-II upgrade

    NASA Astrophysics Data System (ADS)

    Dinardo, M. E.

    2015-04-01

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb-1, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2×1016 1 MeV eq.n. / cm2, or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R&D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R&D effort are presented and discussed in this article.

  12. A new design for the gas pixel detector

    NASA Astrophysics Data System (ADS)

    Muleri, Fabio; Bellazzini, Ronaldo; Brez, Alessandro; Costa, Enrico; Fabiani, Sergio; Minuti, Massimo; Pinchera, Michele; Rubini, Alda; Soffitta, Paolo; Spandre, Gloria

    2012-09-01

    The Gas Pixel Detector, developed and continuously improved by Pisa INFN in collaboration with INAF-IAPS, can visualize the tracks produced within a low Z gas by photoelectrons of few keV. By reconstructing the impact point and the original direction of the photoelectrons, the GPD can measure the linear polarization of X-rays, while preserving the information on the absorption point, the energy and the time of arrival of individual photons. The Gas Pixel Detector filled with He-DME mixture at 1 bar is sensitive in the 2-10 keV energy range and this configuration has been the basis of a number of mission proposals, such as POLARIX or XPOL on-board XEUS/IXO, or the X-ray Imaging Polarimetry Explorer (XIPE) submitted in response to ESA small mission call in 2012. We have recently improved the design by modifying the geometry of the absorption cell to minimize any systematic effect which could leave a residual polarization signal for non polarized source. We report on the testing of this new concept with preliminary results on the new design performance.

  13. Charge amplitude distribution of the Gossip gaseous pixel detector

    NASA Astrophysics Data System (ADS)

    Blanco Carballo, V. M.; Chefdeville, M.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Gromov, V.; Hartjes, F.; Kluit, R.; Koffeman, E.; Salm, C.; Schmitz, J.; Smits, S. M.; Timmermans, J.; Visschers, J. L.

    2007-12-01

    The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few primary electron/ion pairs are created by the traversing particle. To get a detectable signal, the electrons drift towards a perforated metal foil (Micromegas) whereafter they are multiplied in a gas avalanche to provide a detectable signal. The gas avalanche occurs in the high field between the Micromegas and the pixel readout chip (ROC). Compared to a silicon pixel detector, Gossip features a low material budget and a low cooling power. An experiment using X-rays has indicated a possible high radiation tolerance exceeding 10 16 hadrons/cm 2. The amplified charge signal has a broad amplitude distribution due to the limited statistics of the primary ionization and the statistical variation of the gas amplification. Therefore, some degree of inefficiency is inevitable. This study presents experimental results on the charge amplitude distribution for CO 2/DME (dimethyl-ether) and Ar/iC 4H 10 mixtures. The measured curves were fitted with the outcome of a theoretical model. In the model, the physical Landau distribution is approximated by a Poisson distribution that is convoluted with the variation of the gas gain and the electronic noise. The value for the fraction of pedestal events is used for a direct calculation of the cluster density. For some gases, the measured cluster density is considerably lower than given in literature.

  14. Towards hybrid pixel detectors for energy-dispersive or soft X-ray photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Huthwelker, T; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2016-03-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications at free-electron lasers and synchrotron light sources. The JUNGFRAU 0.4 prototype presented here is specifically geared towards low-noise performance and hence soft X-ray detection. The design, geometry and readout architecture of JUNGFRAU 0.4 correspond to those of other JUNGFRAU pixel detectors, which are charge-integrating detectors with 75 µm × 75 µm pixels. Main characteristics of JUNGFRAU 0.4 are its fixed gain and r.m.s. noise of as low as 27 e(-) electronic noise charge (<100 eV) with no active cooling. The 48 × 48 pixels JUNGFRAU 0.4 prototype can be combined with a charge-sharing suppression mask directly placed on the sensor, which keeps photons from hitting the charge-sharing regions of the pixels. The mask consists of a 150 µm tungsten sheet, in which 28 µm-diameter holes are laser-drilled. The mask is aligned with the pixels. The noise and gain characterization, and single-photon detection as low as 1.2 keV are shown. The performance of JUNGFRAU 0.4 without the mask and also in the charge-sharing suppression configuration (with the mask, with a `software mask' or a `cluster finding' algorithm) is tested, compared and evaluated, in particular with respect to the removal of the charge-sharing contribution in the spectra, the detection efficiency and the photon rate capability. Energy-dispersive and imaging experiments with fluorescence X-ray irradiation from an X-ray tube and a synchrotron light source are successfully demonstrated with an r.m.s. energy resolution of 20% (no mask) and 14% (with the mask) at 1.2 keV and of 5% at 13.3 keV. The performance evaluation of the JUNGFRAU 0.4 prototype suggests that this detection system could be the starting point for a future detector development effort for either applications in the soft X-ray energy regime or for an energy

  15. Towards hybrid pixel detectors for energy-dispersive or soft X-ray photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Huthwelker, T; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2016-03-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications at free-electron lasers and synchrotron light sources. The JUNGFRAU 0.4 prototype presented here is specifically geared towards low-noise performance and hence soft X-ray detection. The design, geometry and readout architecture of JUNGFRAU 0.4 correspond to those of other JUNGFRAU pixel detectors, which are charge-integrating detectors with 75 µm × 75 µm pixels. Main characteristics of JUNGFRAU 0.4 are its fixed gain and r.m.s. noise of as low as 27 e(-) electronic noise charge (<100 eV) with no active cooling. The 48 × 48 pixels JUNGFRAU 0.4 prototype can be combined with a charge-sharing suppression mask directly placed on the sensor, which keeps photons from hitting the charge-sharing regions of the pixels. The mask consists of a 150 µm tungsten sheet, in which 28 µm-diameter holes are laser-drilled. The mask is aligned with the pixels. The noise and gain characterization, and single-photon detection as low as 1.2 keV are shown. The performance of JUNGFRAU 0.4 without the mask and also in the charge-sharing suppression configuration (with the mask, with a `software mask' or a `cluster finding' algorithm) is tested, compared and evaluated, in particular with respect to the removal of the charge-sharing contribution in the spectra, the detection efficiency and the photon rate capability. Energy-dispersive and imaging experiments with fluorescence X-ray irradiation from an X-ray tube and a synchrotron light source are successfully demonstrated with an r.m.s. energy resolution of 20% (no mask) and 14% (with the mask) at 1.2 keV and of 5% at 13.3 keV. The performance evaluation of the JUNGFRAU 0.4 prototype suggests that this detection system could be the starting point for a future detector development effort for either applications in the soft X-ray energy regime or for an energy

  16. Design, simulation, fabrication, and preliminary tests of 3D CMS pixel detectors for the super-LHC

    SciTech Connect

    Koybasi, Ozhan; Bortoletto, Daniela; Hansen, Thor-Erik; Kok, Angela; Hansen, Trond Andreas; Lietaer, Nicolas; Jensen, Geir Uri; Summanwar, Anand; Bolla, Gino; Kwan, Simon Wing Lok; /Fermilab

    2010-01-01

    The Super-LHC upgrade puts strong demands on the radiation hardness of the innermost tracking detectors of the CMS, which cannot be fulfilled with any conventional planar detector design. The so-called 3D detector architectures, which feature columnar electrodes passing through the substrate thickness, are under investigation as a potential solution for the closest operation points to the beams, where the radiation fluence is estimated to reach 10{sup 16} n{sub eq}/cm{sup 2}. Two different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks. The fabrication of full-3D active edge CMS pixel devices with p-type substrate has been successfully completed at SINTEF. In this paper, we study the expected post-irradiation behaviors of these devices with simulations and, after a brief description of their fabrication, we report the first leakage current measurement results as performed on wafer.

  17. A germanium hybrid pixel detector with 55μm pixel size and 65,000 channels

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Struth, B.; Hirsemann, H.; Sarajlic, M.; Smoljanin, S.; Zuvic, M.; Lampert, M. O.; Fritzsch, T.; Rothermund, M.; Graafsma, H.

    2014-12-01

    Hybrid pixel semiconductor detectors provide high performance through a combination of direct detection, a relatively small pixel size, fast readout and sophisticated signal processing circuitry in each pixel. For X-ray detection above 20 keV, high-Z sensor layers rather than silicon are needed to achieve high quantum efficiency, but many high-Z materials such as GaAs and CdTe often suffer from poor material properties or nonuniformities. Germanium is available in large wafers of extremely high quality, making it an appealing option for high-performance hybrid pixel X-ray detectors, but suitable technologies for finely pixelating and bump-bonding germanium have not previously been available. A finely-pixelated germanium photodiode sensor with a 256 by 256 array of 55μm pixels has been produced. The sensor has an n-on-p structure, with 700μm thickness. Using a low-temperature indium bump process, this sensor has been bonded to the Medipix3RX photoncounting readout chip. Tests with the LAMBDA readout system have shown that the detector works successfully, with a high bond yield and higher image uniformity than comparable high-Z systems. During cooling, the system is functional around -80°C (with warmer temperatures resulting in excessive leakage current), with -100°C sufficient for good performance.

  18. A generic readout environment for prototype pixel detectors

    NASA Astrophysics Data System (ADS)

    Turqueti, Marcos; Rivera, Ryan; Prosser, Alan; Kwan, Simon

    2010-11-01

    Pixel detectors for experimental particle physics research have been implemented with a variety of readout formats and potentially generate massive amounts of data. Examples include the PSI46 device for the Compact Muon Solenoid (CMS) experiment which implements an analog readout, the Fermilab FPIX2.1 device with a digital readout, and the Fermilab Vertically Integrated Pixel device. The Electronic Systems Engineering Department of the Computing Division at the Fermi National Accelerator Laboratory has developed a data acquisition system flexible and powerful enough to meet the various needs of these devices to support laboratory test bench as well as test beam applications. The system is called CAPTAN (Compact And Programmable daTa Acquisition Node) and is characterized by its flexibility, versatility and scalability by virtue of several key architectural features. These include a vertical bus that permits the user to stack multiple boards, a gigabit Ethernet link that permits high speed communications to the system and a core group of boards that provide specific processing and readout capabilities for the system. System software based on distributed computing techniques supports an expandable network of CAPTANs. In this paper, we describe the system architecture and give an overview of its capabilities.

  19. Multilayer fluorescence imaging on a single-pixel detector.

    PubMed

    Guo, Kaikai; Jiang, Shaowei; Zheng, Guoan

    2016-07-01

    A critical challenge for fluorescence imaging is the loss of high frequency components in the detection path. Such a loss can be related to the limited numerical aperture of the detection optics, aberrations of the lens, and tissue turbidity. In this paper, we report an imaging scheme that integrates multilayer sample modeling, ptychography-inspired recovery procedures, and lensless single-pixel detection to tackle this challenge. In the reported scheme, we directly placed a 3D sample on top of a single-pixel detector. We then used a known mask to generate speckle patterns in 3D and scanned this known mask to different positions for sample illumination. The sample was then modeled as multiple layers and the captured 1D fluorescence signals were used to recover multiple sample images along the z axis. The reported scheme may find applications in 3D fluorescence sectioning, time-resolved and spectrum-resolved imaging. It may also find applications in deep-tissue fluorescence imaging using the memory effect. PMID:27446679

  20. Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

    NASA Astrophysics Data System (ADS)

    Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

    2016-07-01

    The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

  1. Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

  2. Beam test results for the BTeV silicon pixel detector

    SciTech Connect

    Jeffrey A. Appel, G. Chiodini et al.

    2000-09-28

    The authors report the results of the BTeV silicon pixel detector tests carried out in the MTest beam at Fermilab in 1999--2000. The pixel detector spatial resolution has been studied as a function of track inclination, sensor bias, and readout threshold.

  3. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    NASA Astrophysics Data System (ADS)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  4. Adhesive Testing for the BTeV Pixel Detector

    SciTech Connect

    Lei, C.M.; Kwan, Simon; Hicks, D.; Hahn, Eileen; Hoffman, Jay; Austin, Sharon; Jones, Renee; /Fermilab

    2005-12-01

    The basic unit of the BTeV pixel detector is a multi-chip module which is comprised of a silicon sensor module bump-bonded to a number of readout chips. The pixel module will then be glued to a high intensity interconnect (HDI) cable using electrically conductive adhesive, and then onto a substrate using another kind of adhesive with reasonable thermal conductivity. This report is mostly addressed to the need of the latter--the substrate adhesive. The aim of this technical note is to summarize the testing efforts and results of this substrate adhesive covering a period since 2001 till the end of 2004. The substrate will serve two purposes: mechanical support and cooling of the modules. Stresses and strains will be generated when there is a thermal change on the substrate. In addition, since there are many kinds of materials, with different coefficient of thermal expansion (CTE), being glued together to form the complete detector assembly, the substrate may get distorted due to the CTE mismatches. As stress is directly proportional to the material modulus, a significant amount of effort was concentrated in understanding the adhesive modulus. There are other constraints which need to be considered as well. For instance, the detector will be placed in a vacuum close to the beam, and it will be exposed to significant radiation during operation. As there are so many requirements on the adhesive, it is certainly not that easy to find one that meets all the demands. With a reasonable screening that the adhesive candidates being radiation hard and have low outgassing, searching for suitable adhesives was focused on those with low modulus. That is because (1) a mechanically reliable and fail-proof adhesive structure with low stress is needed, and (2) the leaking current characteristics of the modules will increase if mechanical stresses are too high. However, much of the technical information needed is usually not available from the vendor and therefore testing on our own

  5. Robust autonomous detection of the defective pixels in detectors using a probabilistic technique.

    PubMed

    Ghosh, Siddhartha; Froebrich, Dirk; Freitas, Alex

    2008-12-20

    Detection of defective pixels in solid-state detectors/sensor arrays has received limited research attention. Few approaches currently exist for detecting the defective pixels using real images captured with cameras equipped with such detectors, and they are ad hoc and limited in their applicability. In this paper, we present a probabilistic novel integrated technique for autonomously detecting the defective pixels in image sensor arrays. It can be applied to images containing rich scene information, captured with any digital camera equipped with a solid-state detector, to detect different kinds of defective pixels in the detector. We apply our technique to the detection of various defective pixels in an experimental camera equipped with a charge coupled device (CCD) array and two out of the four HgCdTe detectors of the UKIRT's wide field camera (WFCAM) used for infrared (IR) astronomy [Astron. Astrophys.467, 777-784 (2007)]. PMID:19104544

  6. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    NASA Astrophysics Data System (ADS)

    Dobos, Daniel

    2016-07-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to the surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer, a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as early performance tests using cosmic rays and beam data will be presented.

  7. Radiation tolerance of prototype BTeV pixel detector readout chips

    SciTech Connect

    Gabriele Chiodini et al.

    2002-07-12

    High energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is the state of the art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200 MeV proton beam at Indiana University Cyclotron Facility. Prototype pixel readout chip preFPIX2 has been developed at Fermilab for collider experiments and implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose up to 87 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been extensively measured.

  8. Characterization and performance of silicon n-in-p pixel detectors for the ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    Weigell, P.; Beimforde, M.; Gallrapp, Ch.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Pernegger, H.; Richter, R. H.

    2011-12-01

    The existing ATLAS tracker will be at its functional limit for particle fluences of 10 15 neq/cm2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. n-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 μm thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current ATLAS read-out chip FE-I3. The characterisation has been performed with the ATLAS pixel read-out systems, before and after irradiation with 24 GeV/ c protons. In addition preliminary testbeam results for the tracking efficiency and charge collection, obtained with a SCM, are discussed.

  9. The upgraded Pixel Detector of the ATLAS Experiment for Run 2 at the Large Hadron Collider

    NASA Astrophysics Data System (ADS)

    Backhaus, M.

    2016-09-01

    During Run 1 of the Large Hadron Collider (LHC), the ATLAS Pixel Detector has shown excellent performance. The ATLAS collaboration took advantage of the first long shutdown of the LHC during 2013 and 2014 and extracted the ATLAS Pixel Detector from the experiment, brought it to surface and maintained the services. This included the installation of new service quarter panels, the repair of cables, and the installation of the new Diamond Beam Monitor (DBM). Additionally, a completely new innermost pixel detector layer, the Insertable B-Layer (IBL), was constructed and installed in May 2014 between a new smaller beam pipe and the existing Pixel Detector. With a radius of 3.3 cm the IBL is located extremely close to the interaction point. Therefore, a new readout chip and two new sensor technologies (planar and 3D) are used in the IBL. In order to achieve best possible physics performance the material budget was improved with respect to the existing Pixel Detector. This is realized using lightweight staves for mechanical support and a CO2 based cooling system. This paper describes the improvements achieved during the maintenance of the existing Pixel Detector as well as the performance of the IBL during the construction and commissioning phase. Additionally, first results obtained during the LHC Run 2 demonstrating the distinguished tracking performance of the new Four Layer ATLAS Pixel Detector are presented.

  10. Uncooled infrared detectors toward smaller pixel pitch with newly proposed pixel structure

    NASA Astrophysics Data System (ADS)

    Tohyama, Shigeru; Sasaki, Tokuhito; Endoh, Tsutomu; Sano, Masahiko; Kato, Koji; Kurashina, Seiji; Miyoshi, Masaru; Yamazaki, Takao; Ueno, Munetaka; Katayama, Haruyoshi; Imai, Tadashi

    2013-12-01

    An uncooled infrared (IR) focal plane array (FPA) with 23.5 μm pixel pitch has been successfully demonstrated and has found wide commercial applications in the areas of thermography, security cameras, and other applications. One of the key issues for uncooled IRFPA technology is to shrink the pixel pitch because the size of the pixel pitch determines the overall size of the FPA, which, in turn, determines the cost of the IR camera products. This paper proposes an innovative pixel structure with a diaphragm and beams placed in different levels to realize an uncooled IRFPA with smaller pixel pitch (≦17 μm). The upper level consists of a diaphragm with VOx bolometer and IR absorber layers, while the lower level consists of the two beams, which are designed to be placed on the adjacent pixels. The test devices of this pixel design with 12, 15, and 17 μm pitch have been fabricated on the Si read-out integrated circuit (ROIC) of quarter video graphics array (QVGA) (320×240) with 23.5 μm pitch. Their performances are nearly equal to those of the IRFPA with 23.5 μm pitch. For example, a noise equivalent temperature difference of 12 μm pixel is 63.1 mK for F/1 optics with the thermal time constant of 14.5 ms. Then, the proposed structure is shown to be effective for the existing IRFPA with 23.5 μm pitch because of the improvements in IR sensitivity. Furthermore, the advanced pixel structure that has the beams composed of two levels are demonstrated to be realizable.

  11. 3D simulations and modeling of new low capacitance silicon pixel detectors

    NASA Astrophysics Data System (ADS)

    Xiong, Bo; Li, Yu Yun; Li, Zheng

    2016-09-01

    With signal to noise ratio (S/N) being a key parameter of a high performance detector, reducing the detector noise has been one of the main tasks in detector development. A new low capacitance silicon pixel detector is proposed, which is based on a new electrode geometry with reduced effective electrode area while keeping the sensitive volume unchanged. Detector electrical characteristics including electrostatic potential, electric field, full depletion voltage, and capacitance have been simulated in detail using a 3D TCAD tool. From these simulations and calculations, we confirm that the new detector structure has a much reduced capacitance (by a factor of 3) as compared to the traditional pixel detectors with the same sensitive volume. This reduction in detector capacitance can certainly improve the detector signal to noise ratio. However, the full depletion voltage for the new structure is larger than that of the traditional one due to the small electrode effect.

  12. Using an Active Pixel Sensor In A Vertex Detector

    SciTech Connect

    Matis, Howard S.; Bieser, Fred; Chen, Yandong; Gareus, Robin; Kleinfelder, Stuart; Oldenburg, Markus; Retiere, Fabrice; Ritter, HansGeorg; Wieman, Howard H.; Wurzel, Samuel E.; Yamamoto, Eugene

    2004-04-22

    Research has shown that Active Pixel CMOS sensors can detect charged particles. We have been studying whether this process can be used in a collider environment. In particular, we studied the effect of radiation with 55 MeV protons. These results show that a fluence of about 2 x 10{sup 12} protons/cm{sup 2} reduces the signal by a factor of two while the noise increases by 25%. A measurement 6 months after exposure shows that the silicon lattice naturally repairs itself. Heating the silicon to 100 C reduced the shot noise and increased the collected charge. CMOS sensors have a reduced signal to noise ratio per pixel because charge diffuses to neighboring pixels. We have constructed a photogate to see if this structure can collect more charge per pixel. Results show that a photogate does collect charge in fewer pixels, but it takes about 15 ms to collect all of the electrons produced by a pulse of light.

  13. Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

    NASA Astrophysics Data System (ADS)

    Kalliopuska, Juha; Tlustos, Lukas; Eränen, Simo; Virolainen, Tuula

    2011-08-01

    VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ˜90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

  14. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    NASA Astrophysics Data System (ADS)

    Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

    2015-04-01

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

  15. Optical readout in a multi-module system test for the ATLAS pixel detector

    NASA Astrophysics Data System (ADS)

    Flick, Tobias; Becks, Karl-Heinz; Gerlach, Peter; Kersten, Susanne; Mättig, Peter; Nderitu Kirichu, Simon; Reeves, Kendall; Richter, Jennifer; Schultes, Joachim

    2006-09-01

    The innermost part of the ATLAS experiment at the LHC, CERN, will be a pixel detector, which is presently under construction. The command messages and the readout data of the detector are transmitted over an optical data path. The readout chain consists of many components which are produced at several locations around the world, and must work together in the pixel detector. To verify that these parts are working together as expected a system test has been built up. It consists of detector modules, optoboards, optical fibres, Back of Crate cards, Readout Drivers, and control computers. In this paper, the system test setup and the operation of the readout chain are described. Also, some results of tests using the final pixel detector readout chain are given.

  16. Beam test results of the BTeV silicon pixel detector

    SciTech Connect

    Gabriele Chiodini et al.

    2000-09-28

    The authors have described the results of the BTeV silicon pixel detector beam test. The pixel detectors under test used samples of the first two generations of Fermilab pixel readout chips, FPIX0 and FPIX1, (indium bump-bonded to ATLAS sensor prototypes). The spatial resolution achieved using analog charge information is excellent for a large range of track inclination. The resolution is still very good using only 2-bit charge information. A relatively small dependence of the resolution on bias voltage is observed. The resolution is observed to depend dramatically on the discriminator threshold, and it deteriorates rapidly for threshold above 4000e{sup {minus}}.

  17. Simulation on the Charged Particle Response of the STAR Heavy Flavor Tracker Pixel Detector

    NASA Astrophysics Data System (ADS)

    Cimaroli, Alex; Li, Xin

    2009-10-01

    The main task of the STAR experiment, located at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory, is to study the quark-gluon plasma (QGP), which is believed to have been created a few microseconds after the ``Big Bang.'' Heavy quarks are ideal tools for studying the properties of QGP. The Heavy Flavor Tracker (HFT) is the central part of the STAR future heavy flavor physics program and will enable STAR to directly measure heavy flavor mesons. The core of HFT is a pixel detector (PIXEL) using CMOS Active PIXEL Sensor. This poster will describe the development of a detailed simulation of the pixel detector response to charged particles and the corresponding fast simulation that dramatically enhances the simulation speed with little sacrifice in accuracy. The full simulation randomly generates ionized electrons along an incoming track and diffuses the electrons inside the pixel array until they are collected by the electronics or recombined inside a pixel. With the same result, the fast simulation, which quickens processing time from one hour to 5 seconds, generates a grid inside a single pixel and create a map of probability distribution functions for a single ionized electron generated from a grid point. We will also discuss the study of pixel detector position resolution using a simple clustering algorithm.

  18. IV and CV curves for irradiated prototype BTeV silicon pixel sensors

    SciTech Connect

    Maria R. Coluccia et al.

    2002-07-16

    The authors present IV and CV curves for irradiated prototype n{sup +}/n/p{sup +} silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10{sup 14} protons/cm{sup 2}.

  19. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    NASA Astrophysics Data System (ADS)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  20. Pixel detectors in double beta decay experiments, a new approach for background reduction

    SciTech Connect

    Jose, J. M.; Čermák, P.; Štekl, I.; Rukhadze, E. N.; Rukhadze, N. I.; Brudanin, V. B.; Fiederle, M.; Fauler, A.; Loaiza, P.

    2013-08-08

    Double beta decay (ββ) experiments are challenging frontiers in contemporary physics. These experiments have the potential to investigate more about neutrinos (eg. nature and mass). The main challenge for these experiments is the reduction of background. The group at IEAP, CTU in Prague is investigating a new approach using pixel detectors Timepix. Pixel detector offer background reduction capabilities with its ability to identify the particle interaction (from the 2D signature it generates). However, use of pixel detectors has some challenges such as the presence of readout electronics near the sensing medium and heat dissipation. Different aspects of pixel setup (identification of radio-impurities, selection of radio-pure materials) and proposed experimental setup are presented. Also, results of preliminary background measurements (performed on the surface and in the underground laboratories) using the prototype setups are presented.

  1. 4.3 μm quantum cascade detector in pixel configuration.

    PubMed

    Harrer, A; Schwarz, B; Schuler, S; Reininger, P; Wirthmüller, A; Detz, H; MacFarland, D; Zederbauer, T; Andrews, A M; Rothermund, M; Oppermann, H; Schrenk, W; Strasser, G

    2016-07-25

    We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO2 absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D* of 5⋅107 cmHz/W was measured. PMID:27464155

  2. ASICs in nanometer and 3D technologies for readout of hybrid pixel detectors

    NASA Astrophysics Data System (ADS)

    Maj, Piotr; Grybos, Pawel; Kmon, Piotr; Szczygiel, Robert

    2013-07-01

    Hybrid pixel detectors working in a single photon counting mode are very attractive solutions for material science and medical X-ray imaging applications. Readout electronics of these detectors has to match the geometry of pixel detectors with an area of readout channel of 100 μm × 100 μm (or even less) and very small power consumption (a few tens of μW). New solutions of readout ASICs are going into directions of better spatial resolutions, higher data throughput and more advanced functionality. We report on the design and measurement results of two pixel prototype ASICs in nanometer technology and 3D technology which offer fast signal processing, low noise performance and advanced functionality per single readout pixel cell.

  3. Si pixel detectors in the detection of EC/EC decay

    SciTech Connect

    Jose, J. M.; Čermák, P.; Fajt, L.; Štekl, I.; Rukhadze, N. I.; Shitov, Yu. A.

    2015-08-17

    The SPT collaboration has been investigating the applicability of pixel detectors in the detection of two neutrino double electron capture (2νEC/EC) in{sup 106}Cd. The collaboration has proposed a Silicon Pixel Telescope (SPT) where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. The Pixel detector gives spatial information along with energy of the particle, thus helps to identify and remove the background signals. Four units of SPT prototype (using 0.5 and 1 mm Si sensors) were fabricated and installed in the LSM underground laboratory, France. Recent progress in the SPT experiment and preliminary results from background measurements are presented.

  4. Progress in the use of pixel detectors in double beta decay experiment TGV

    SciTech Connect

    Jose, J. M. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a Collaboration: TGV Collaboration

    2013-12-30

    The TGV collaboration has been investigating two neutrino double electron capture (2νEC/EC) in {sup 106}Cd since 2000. The double beta experiments would answer some of the puzzling problems about neutrinos (e.g. nature and mass) but one of the main challenges is the background events. The collaboration is investigating the use of pixel detectors in such rare decay experiments. Pixel detector gives spatial information along with energy of the particle, thus provides useful information to reduce the background. The collaboration has proposed a Silicon Pixel Telescope (SPT) for the next generation experiment; where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. A prototype unit of SPT has been constructed and results of preliminary background measurements performed on the surface and in the underground laboratories are presented.

  5. X-ray characterization of a multichannel smart-pixel array detector.

    PubMed

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements. PMID:26698064

  6. High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

    PubMed

    Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

    2016-03-01

    A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

  7. High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

    PubMed

    Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

    2016-02-01

    We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams. PMID:26750260

  8. X-ray Characterization of a Multichannel Smart-Pixel Array Detector

    SciTech Connect

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A.; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

  9. High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

    PubMed

    Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

    2016-03-01

    A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

  10. High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

    PubMed

    Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

    2016-02-01

    We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams.

  11. High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

    PubMed Central

    Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

    2016-01-01

    A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

  12. A GaAs pixel detectors-based digital mammographic system: Performances and imaging tests results

    NASA Astrophysics Data System (ADS)

    Annovazzi, A.; Amendolia, S. R.; Bigongiari, A.; Bisogni, M. G.; Catarsi, F.; Cesqui, F.; Cetronio, A.; Colombo, F.; Delogu, P.; Fantacci, M. E.; Gilberti, A.; Lanzieri, C.; Lavagna, S.; Novelli, M.; Passuello, G.; Paternoster, G.; Pieracci, M.; Poletti, M.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Testa, A.; Venturelli, L.

    2007-06-01

    The prototype presented in this paper is based on GaAs pixel detectors read-out by the PCC/MEDIPIX I circuit. The active area of a sensor is about 1 cm 2 therefore to cover the typical irradiation field used in mammography (18×24 cm 2), 18 GaAs detection units have been organized in two staggered rows of nine chips each and moved by a stepper motor in the orthogonal direction. The system is integrated in a mammographic equipment which comprehends the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the Integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies, Alenia Marconi Systems (AMS), CAEN, Gilardoni, LABEN and Poli.Hi.Tech., in collaboration with the universities of Ferrara, Roma "La Sapienza", Pisa and the Istituto Nazionale di Fisica Nucleare (INFN). In this paper, we report on the electrical characterization and the first imaging test results of the digital mammographic system. To assess the imaging capability of such a detector we have built a phantom, which simulates the breast tissue with malignancies. The radiographs of the phantom, obtained by delivering an entrance dose of 4.8 mGy, have shown particulars with a measured contrast below 1%.

  13. The Pixel Detector of the ATLAS experiment for LHC Run-2

    NASA Astrophysics Data System (ADS)

    Pernegger, H.

    2015-06-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller beam pipe at a radius of 3.3 cm. To cope with the high radiation and hit occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as the experience in its construction will be presented, focusing on adopted technologies, module and staves production, qualification of assembly procedure, integration of staves around the beam pipe and commissioning of the detector.

  14. Phase 1 Upgrade of the CMS Pixel Detector: Module Assembly and Testing

    NASA Astrophysics Data System (ADS)

    Kumar, Ashish

    2014-03-01

    The CMS pixel detector is the innermost component of the all-silicon tracking system located closest to the interaction point and thus operates in a high-occupancy/high-radiation environment created by particle collisions. The performance of the current pixel detector has been excellent during Run 1 of the LHC. However, the foreseen increases of the instantaneous and integrated luminosities at the LHC necessitate an upgrade of the pixel detector in order to maintain the excellent tracking and physics performance of the CMS detector. The new pixel detector is expected to be installed during the extended end-of-year shutdown in 2016/17. The main new features of the upgraded pixel detector would be ultra-light mechanical design with four barrel layers and three end-caps on either side of the interaction point, digital readout chip with higher rate capability and new cooling system. These and other design improvements, along with the current status on module assembly and testing, will be discussed.

  15. Search for new, long-lived, charged particles using ionization in the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Axen, Bradley; Atlas Collaboration

    2016-03-01

    Several extensions of the Standard Model predict the existence of charged, very massive, and long-lived particles. Because of their high masses these particles would propagate non-relativistically through the ATLAS pixel detector and are therefore be identifiable through a measurement of large specific energy loss. Measuring heavy, long-lived particles through their track parameters in the pixel detector allows sensitivity to particles with lifetimes in the nanosecond range and above. This search presents an inner detector driven method for identifying such particles in proton-proton collisions at 13 TeV with the 2015 dataset corresponding to an integrated luminosity of 3.5 pb-1.

  16. High efficiency neutron sensitive amorphous silicon pixel detectors

    SciTech Connect

    Mireshghi, A.; Cho, G.; Drewery, J.S.; Hong, W.S.; Jing, T.; Lee, H.; Kaplan, S.N.; Perez-Mendez, V.

    1993-11-01

    A multi-layer a-Si:H based thermal neutron detector was designed, fabricated and simulated by Monte Carlo method. The detector consists of two PECVD deposited a-Si:H pin detectors interfaced with coated layers of Gd, as a thermal neutron converter. Simulation results indicate that a detector consisting of 2 Gd films with thicknesses of 2 and 4 {mu}m, sandwiched properly with two layers of sufficiently thick ({approximately}30{mu}m) amorphous silicon diodes, has the optimum parameters. The detectors have an intrinsic efficiency of about 42% at a threshold setting of 7000 electrons, with an expected average signal size of {approximately}12000 electrons which is well above the noise. This efficiency will be further increased to nearly 63%, if we use Gd with 50% enrichment in {sup 157}Gd. We can fabricate position sensitive detectors with spatial resolution of 300 {mu}m with gamma sensitivity of {approximately}1 {times} 10{sup {minus}5}. These detectors are highly radiation resistant and are good candidates for use in various application, where high efficiency, high resolution, gamma insensitive position sensitive neutron detectors are needed.

  17. Pixel detectors for diffraction-limited storage rings.

    PubMed

    Denes, Peter; Schmitt, Bernd

    2014-09-01

    Dramatic advances in synchrotron radiation sources produce ever-brighter beams of X-rays, but those advances can only be used if there is a corresponding improvement in X-ray detectors. With the advent of storage ring sources capable of being diffraction-limited (down to a certain wavelength), advances in detector speed, dynamic range and functionality is required. While many of these improvements in detector capabilities are being pursued now, the orders-of-magnitude increases in brightness of diffraction-limited storage ring sources will require challenging non-incremental advances in detectors. This article summarizes the current state of the art, developments underway worldwide, and challenges that diffraction-limited storage ring sources present for detectors.

  18. Perspectives of the Pixel Detector Timepix for Needs of Ion Beam Therapy

    NASA Astrophysics Data System (ADS)

    Martišíková, M.; Hartmann, B.; Jäkel, O.; Granja, C.; Jakubek, J.

    2012-08-01

    Radiation therapy with ion beams is a highly precise kind of cancer treatment. In ion beam therapy the finite range of the ion beams in tissue and the increase of ionization density at the end of their path, the Bragg-peak, are exploited. Ions heavier than protons offer in addition increased biological effectiveness and decreased scattering. In this contribution we discuss the potential of a quantum counting and position sensitive semiconductor detector Timepix for its applications in ion beam therapy measurements. It provides high sensitivity and high spatial resolution (pixel pitch 55 μm). The detector, developed by the Medipix Collaboration, consists of a silicon sensor bump bonded to a pixelated readout chip (256 × 256 pixels with 55 μm pitch). An integrated USB-based readout interface together with the Pixelman software enable registering single particles online with 2D-track visualization. The experiments were performed at the Heidelberg Ion Beam Therapy Center (HIT), which is a modern ion beam therapy facility. Patient treatments are performed with proton and carbon ions, which are accelerated by a synchrotron. For dose delivery to the patient an active technique is used: narrow pencil-like beams are scanned over the target volume. The possibility to use the detector for two different applications was investigated: ion spectroscopy and beam delivery monitoring by measurement of secondary charged particles around the patient. During carbon ion therapy, a variety of ion species is created by nuclear fragmentation processes of the primary beam. Since they differ in their biological effectiveness, it is of large interest to measure the ion spectra created under different conditions and to visualize their spatial distribution. The possibility of measurements of ion energy loss in silicon makes Timepix a promising detector for ion-spectroscopic studies in patient-like phantoms. Unpredictable changes in the patient can alter the range of the ion beam in the body

  19. Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors

    NASA Astrophysics Data System (ADS)

    Schneider, A.; Veale, M. C.; Duarte, D. D.; Bell, S. J.; Wilson, M. D.; Lipp, J. D.; Seller, P.

    2015-02-01

    In the last decade, the Detector Development Group at the Technology Department of the Science and Technology Facilities Council (STFC), U.K., established a variety of fabrication and bonding techniques to build pixelated X-ray and γ-ray detector systems such as the spectroscopic X-ray imaging detector HEXITEC [1]. The fabrication and bonding of such devices comprises a range of processes including material surface preparation, photolithography, stencil printing, flip-chip and wire bonding of detectors to application-specific integrated circuits (ASIC). This paper presents interconnect and bonding techniques used in the fabrication chain for pixelated detectors assembled at STFC. For this purpose, detector dies (~ 20× 20 mm2) of high quality, single crystal semiconductors, such as cadmium zinc telluride (CZT) are cut to the required thickness (up to 5mm). The die surfaces are lapped and polished to a mirror-finish and then individually processed by electroless gold deposition combined with photolithography to form 74× 74 arrays of 200 μ m × 200 μ m pixels with 250 μ m pitch. Owing to a lack of availability of CZT wafers, lithography is commonly carried out on individual detector dies which represents a significant technical challenge as the edge of the pixel array and the surrounding guard band lies close to the physical edge of the crystal. Further, such detector dies are flip-chip bonded to readout ASIC using low-temperature curing silver-loaded epoxy so that the stress between the bonded detector die and the ASIC is minimized. In addition, this reduces crystalline modifications of the detector die that occur at temperature greater than 150\\r{ }C and have adverse effects on the detector performance. To allow smaller pitch detectors to be bonded, STFC has also developed a compression cold-weld indium bump bonding technique utilising bumps formed by a photolithographic lift-off technique.

  20. Hard x-ray response of pixellated CdZnTe detectors

    SciTech Connect

    Abbene, L.; Caccia, S.; Bertuccio, G.

    2009-06-15

    In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm{sup 3} single crystals) have an anode layout based on an array of 256 pixels with a geometric pitch of 0.5 mm. The ASIC, fabricated in 0.8 mum BiCMOS technology, is equipped with eight independent channels (preamplifier and shaper) and characterized by low power consumption (0.5 mW/channel) and low noise (150-500 electrons rms). The spectroscopic results point out the good energy resolution of both detectors at room temperature [5.8% full width at half maximum (FWHM) at 59.5 keV for the 1 mm thick detector; 5.5% FWHM at 59.5 keV for the 2 mm thick detector) and low tailing in the measured spectra, confirming the single charge carrier sensing properties of the CdZnTe detectors equipped with a pixellated anode layout. Temperature measurements show optimum performance of the system (detector and electronics) at T=10 deg.C and performance degradation at lower temperatures. The detectors and the ASIC were developed by our collaboration as two small focal plane detector prototypes for hard x-ray multilayer telescopes operating in the 20-70 keV energy range.

  1. The Pixel Detector of the ATLAS experiment for Run 2 of the Large Hadron Collider

    NASA Astrophysics Data System (ADS)

    Oide, H.

    2014-12-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of the LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface in order to equip it with new service quarter panels, to repair modules, and to ease installation of the Insertable B-Layer (IBL). The IBL is the fourth layer of the Run 2 Pixel Detector, and it was installed at a radius of 3.3 cm in May 2014 between the existing Pixel Detector and the new smaller-radius beam pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance is expected to improve through the reduction of pixel size. As well, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system were adopted. An overview of the IBL project as well as the experience in its construction is presented, focusing on adopted technologies, module and staves production, qualification of assembly procedure, integration of staves around the beam pipe, and commissioning of the detector.

  2. A new generation of small pixel pitch/SWaP cooled infrared detectors

    NASA Astrophysics Data System (ADS)

    Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

    2015-10-01

    Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

  3. Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker upgrade

    NASA Astrophysics Data System (ADS)

    Viel, Simon; Banerjee, Swagato; Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice; Hard, Andrew Straiton; Kaplan, Laser Seymour; Kashif, Lashkar; Pranko, Aliaksandr; Rieger, Julia; Wolf, Julian; Wu, Sau Lan; Yang, Hongtao

    2016-09-01

    In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN.

  4. Charge Sharing and Charge Loss in a Cadmium-Zinc-Telluride Fine-Pixel Detector Array

    NASA Technical Reports Server (NTRS)

    Gaskin, J. A.; Sharma, D. P.; Ramsey, B. D.; Six, N. Frank (Technical Monitor)

    2002-01-01

    Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.

  5. Evaluation of a Wobbling Method Applied to Correcting Defective Pixels of CZT Detectors in SPECT Imaging

    PubMed Central

    Xie, Zhaoheng; Li, Suying; Yang, Kun; Xu, Baixuan; Ren, Qiushi

    2016-01-01

    In this paper, we propose a wobbling method to correct bad pixels in cadmium zinc telluride (CZT) detectors, using information of related images. We build up an automated device that realizes the wobbling correction for small animal Single Photon Emission Computed Tomography (SPECT) imaging. The wobbling correction method is applied to various constellations of defective pixels. The corrected images are compared with the results of conventional interpolation method, and the correction effectiveness is evaluated quantitatively using the factor of peak signal-to-noise ratio (PSNR) and structural similarity (SSIM). In summary, the proposed wobbling method, equipped with the automatic mechanical system, provides a better image quality for correcting defective pixels, which could be used for all pixelated detectors for molecular imaging. PMID:27240368

  6. Measurement of secondary radiation during ion beam therapy with the pixel detector Timepix

    NASA Astrophysics Data System (ADS)

    Martišíková, Mária; Jakubek, Jan; Granja, Carlos; Hartmann, Bernadette; Opálka, Lukáš; Pospíšil, Stanislav; Jäkel, Oliver

    2011-11-01

    In ion beam therapy the finite range of the ion beams in tissue and the presence of the Bragg-peak are exploited. Unpredictable changes in the patient`s condition can alter the range of the ion beam in the body. Therefore it is desired to verify the actual ion range during the treatment, preferably in a non-invasive way. Positron emission tomography (PET) has been used successfully to monitor the applied dose distributions. This method however suffers from limited applicability and low detection efficiency. In order to increase the detection efficiency and to decrease the uncertainties, in this study we investigate the possibility to measure secondary charged particles emerging from the patient during irradiation. An initial experimental study to register the particle radiation coming out of a patient phantom during the therapy was performed at the Heidelberg Ion Beam Therapy Center (HIT) in Germany. A static narrowly-focused beam of carbon ions was directed into a head phantom. The emerging secondary radiation was measured with the position-sensitive Timepix detector outside of the phantom. The detector, developed by the Medipix Collaboration, consists of a silicon sensor bump bonded to a pixelated readout chip (256 × 256 pixels with 55 μm pitch). Together with the USB-based readout interface, Timepix can operate as an active nuclear emulsion registering single particles online with 2D-track visualization. In this contribution we measured the signal behind the head phantom and investigated its dependence on the beam energy (corresponding to beam range in water 2-30 cm). Furthermore, the response was measured at four angles between 0 and 90 degrees. At all investigated energies some signal was registered. Its pattern corresponds to ions. Differences in the total amount of signal for different beam energies were observed. The time-structure of the signal is correlated with that of the incoming beam, showing that we register products of prompt processes. Such

  7. Low-cost bump-bonding processes for high energy physics pixel detectors

    NASA Astrophysics Data System (ADS)

    Caselle, M.; Blank, T.; Colombo, F.; Dierlamm, A.; Husemann, U.; Kudella, S.; Weber, M.

    2016-01-01

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15 μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30 μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The short setup time for the bumping process makes gold-stud bump-bonding highly attractive (and affordable) for the flip-chipping of single prototype ICs, which is the main limitation of the current photolithography processes.

  8. 14C autoradiography with an energy-sensitive silicon pixel detector.

    PubMed

    Esposito, M; Mettivier, G; Russo, P

    2011-04-01

    The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

  9. Novel module production methods for the CMS pixel detector, upgrade phase I

    NASA Astrophysics Data System (ADS)

    Blank, T.; Caselle, M.; Weber, M.; Kudella, S.; Colombo, F.; Hansen, K.; Arab, S.

    2015-02-01

    For the High-Luminosity upgrade of the LHC (HL-LHC), phase I, the CMS pixel detector needs to be replaced. In order to improve the tracking resolution even at high luminosity the pixel detector is upgraded by a fourth barrel layer. This paper describes the production process and results for the fourth barrel layer for the CMS silicon pixel detector, upgrade phase I. The additional barrel layer will be produced by KIT and DESY. Both research centers have commonly developed and investigated new production processes, including SAC solder bump jetting, gold stud bumping and "Precoat by Powder Processes" (PPS) to bump the sensor tiles and prepare them for the flip-chip process. First bare modules have been produced with the new digital ROC.

  10. Recent progress in the development of a B-factory monolithic active pixel detector

    NASA Astrophysics Data System (ADS)

    Stanič, S.; Aihara, H.; Barbero, M.; Bozek, A.; Browder, T.; Hazumi, M.; Kennedy, J.; Kent, N.; Olsen, S.; Palka, H.; Rosen, M.; Ruckman, L.; Trabelsi, K.; Tsuboyama, T.; Uchida, K.; Varner, G.; Yang, Q.

    2006-11-01

    Due to the need for precise vertexing at future higher luminosity B-factories with the expectedly increasing track densities and radiation exposures, upgrade of present silicon strip detectors with thin, radiation resistant pixel detectors is highly desired. Considerable progress in the technological development of thin CMOS based Monolithic Active Pixel Sensors (MAPS) in the last years makes them a realistic upgrade option and the feasibility studies of their application in Belle are actively pursued. The most serious concerns are their radiation hardness and their read-out speed. To address them, several prototypes denoted as Continuous Acquisition Pixel (CAP) sensors have been developed and tested. The latest of the CAP sensor prototypes is CAP3, designed in the TSMC 0.25 μm process with a 5-deep sample pair pipeline in each pixel. A setup with several CAP3 sensors will be used to assess the performance of a full scale pixel read-out system running at realistic read-out speed. The results and plans for the next stages of R&D towards a full Pixel Vertex Detector (PVD) are presented.

  11. Performance and applications of a high rate imaging pixel detector

    NASA Astrophysics Data System (ADS)

    Pavel, N. A.; Besch, H. J.; Menk, R.; Sarvestani, A.; Sauer, N.; Stiehler, R.; Walenta, A. H.

    2002-01-01

    In the past years a large variety of gas filled micro pattern detectors have been developed for applications in high energy physics as well as for X-ray imaging in synchrotron light experiments. Here, we present the most recent developments on the MicroCAT detector with resistive position encodeing readout, which has been demonstrated to meet even the strong requirements in high resolution protein crystallography and time resolved small angle scattering at synchrotron light sources of the third generation. Recent test measurements with the prototype under the working conditions of a synchrotron light source as well as high time resolved measurements in the laboratory are presented.

  12. 18F-FDG positron autoradiography with a particle counting silicon pixel detector.

    PubMed

    Russo, P; Lauria, A; Mettivier, G; Montesi, M C; Marotta, M; Aloj, L; Lastoria, S

    2008-11-01

    We report on tests of a room-temperature particle counting silicon pixel detector of the Medipix2 series as the detector unit of a positron autoradiography (AR) system, for samples labelled with (18)F-FDG radiopharmaceutical used in PET studies. The silicon detector (1.98 cm(2) sensitive area, 300 microm thick) has high intrinsic resolution (55 microm pitch) and works by counting all hits in a pixel above a certain energy threshold. The present work extends the detector characterization with (18)F-FDG of a previous paper. We analysed the system's linearity, dynamic range, sensitivity, background count rate, noise, and its imaging performance on biological samples. Tests have been performed in the laboratory with (18)F-FDG drops (37-37 000 Bq initial activity) and ex vivo in a rat injected with 88.8 MBq of (18)F-FDG. Particles interacting in the detector volume produced a hit in a cluster of pixels whose mean size was 4.3 pixels/event at 11 keV threshold and 2.2 pixels/event at 37 keV threshold. Results show a sensitivity for beta(+) of 0.377 cps Bq(-1), a dynamic range of at least five orders of magnitude and a lower detection limit of 0.0015 Bq mm(-2). Real-time (18)F-FDG positron AR images have been obtained in 500-1000 s exposure time of thin (10-20 microm) slices of a rat brain and compared with 20 h film autoradiography of adjacent slices. The analysis of the image contrast and signal-to-noise ratio in a rat brain slice indicated that Poisson noise-limited imaging can be approached in short (e.g. 100 s) exposures, with approximately 100 Bq slice activity, and that the silicon pixel detector produced a higher image quality than film-based AR.

  13. A 2D smart pixel detector for time-resolved protein crystallography

    SciTech Connect

    Beuville, E.; Cork, C.; Earnest, T.

    1995-10-01

    A smart pixel detector is being developed for Time Resolved Crystallography for biological and material science applications. Using the Pixel detector presented here, the Laue method will enable the study of the evolution of structural changes that occur within the protein as a function of time. The x-ray pixellated detector is assembled to the integrated circuit through a bump bonding process. Within a pixel size of 150 x 150 {mu}m{sup 2}, a low noise preamplifier-shaper, a discriminator, a 3 bit counter and the readout logic are integrated. The readout, based on the Column Architecture principle, will accept hit rates above 5x10{sup 8}/cm{sup 2}/s with a maximum hit rate per pixel of 1 MHz. This detector will allow time resolved Laue crystallography to be performed in a frameless operation mode, without dead time. Target specifications, architecture, and preliminary results on the 8 x 8 front-end prototype and column readout are presented.

  14. Compressive spectral polarization imaging by a pixelized polarizer and colored patterned detector.

    PubMed

    Fu, Chen; Arguello, Henry; Sadler, Brian M; Arce, Gonzalo R

    2015-11-01

    A compressive spectral and polarization imager based on a pixelized polarizer and colored patterned detector is presented. The proposed imager captures several dispersed compressive projections with spectral and polarization coding. Stokes parameter images at several wavelengths are reconstructed directly from 2D projections. Employing a pixelized polarizer and colored patterned detector enables compressive sensing over spatial, spectral, and polarization domains, reducing the total number of measurements. Compressive sensing codes are specially designed to enhance the peak signal-to-noise ratio in the reconstructed images. Experiments validate the architecture and reconstruction algorithms.

  15. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    PubMed

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

  16. X-ray imaging using a 320 x 240 hybrid GaAs pixel detector

    SciTech Connect

    Irsigler, R.; Andersson, J.; Alverbro, J.

    1999-06-01

    The authors present room temperature measurements on 200 {micro}m thick GaAs pixel detectors, which were hybridized to silicon readout circuits. The whole detector array contains 320 x 240 square shaped pixel with a pitch of 38 {micro}m and is based on semi-insulating liquid-encapsulated Czochralski (LEC) GaAs material. After fabricating and dicing, the detector chips were indium bump flip chip bonded to CMOS readout circuits based on charge integration and finally evaluated. This readout chip was originally designed for the readout of flip chip bonded infrared detectors, but appears to be suitable for X-ray applications as well. A bias voltage between 50 V and 100 V was sufficient to operate the detector at room temperature. The detector array did respond to x-ray radiation by an increase in current due to production of electron hole pairs by the ionization processes. Images of various objects and slit patterns were acquired by using a standard X-ray source for dental imaging. The new X-ray hybrid detector was analyzed with respect to its imaging properties. Due to the high absorption coefficient for X-rays in GaAs and the small pixel size, the sensor shows a high modulation transfer function up to the Nyquist frequency.

  17. Test results on the silicon pixel detector for the TTF-FEL beam trajectory monitor

    NASA Astrophysics Data System (ADS)

    Hillert, S.; Ischebeck, R.; Müller, U. C.; Roth, S.; Hansen, K.; Holl, P.; Karstensen, S.; Kemmer, J.; Klanner, R.; Lechner, P.; Leenen, M.; Ng, J. S. T.; Schmüser, P.; Strüder, L.

    2001-02-01

    Test measurements on the silicon pixel detector for the beam trajectory monitor at the free-electron laser of the TESLA test facility are presented. To determine the electronic noise of the detector and the read-out electronics and to calibrate the signal amplitude of different pixels, the 6 keV photons of the manganese K α/K β line are used. Two different methods determine the spatial accuracy of the detector: in one setup a laser beam is focused to a straight line and moves across the pixel structure. In the other, the detector is scanned using a low-intensity electron beam of an electron microscope. Both methods show that the symmetry axis of the detector defines a straight line within 0.4 μm. The sensitivity of the detector to low-energy X-rays is measured using a vacuum ultraviolet beam at the synchrotron light source HASYLAB. Additionally, the electron microscope is used to study the radiation hardness of the detector.

  18. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

  19. Energy calibration of energy-resolved photon-counting pixel detectors using laboratory polychromatic x-ray beams

    NASA Astrophysics Data System (ADS)

    Youn, Hanbean; Han, Jong Chul; Kam, Soohwa; Yun, Seungman; Kim, Ho Kyung

    2014-10-01

    Recently, photon-counting detectors capable of resolving incident x-ray photon energies have been considered for use in spectral x-ray imaging applications. For reliable use of energy-resolved photon-counting detectors (ERPCDs), energy calibration is an essential procedure prior to their use because variations in responses from each pixel of the ERPCD for incident photons, even at the same energy, are inevitable. Energy calibration can be performed using a variety of methods. In all of these methods, the photon spectra with well-defined peak energies are recorded. Every pixel should be calibrated on its own. In this study, we suggest the use of a conventional polychromatic x-ray source (that is typically used in laboratories) for energy calibration. The energy calibration procedure mainly includes the determination of the peak energies in the spectra, flood-field irradiation, determination of peak channels, and determination of calibration curves (i.e., the slopes and intercepts of linear polynomials). We applied a calibration algorithm to a CdTe ERPCD comprised of 128×128 pixels with a pitch of 0.35 mm using highly attenuated polychromatic x-ray beams to reduce the pulse pile-up effect, and to obtain a narrow-shaped spectrum due to beam hardening. The averaged relative error in calibration curves obtained from 16,384 pixels was about 0.56% for 59.6 keV photons from an Americium radioisotope. This pixel-by-pixel energy calibration enhanced the signal- and contrast-to-noise ratios in images, respectively, by a factor of ~5 and 3 due to improvement in image homogeneity, compared to those obtained without energy calibration. One secondary finding of this study was that the x-ray photon spectra obtained using a common algorithm for computing x-ray spectra reasonably described the peaks in the measured spectra, which implies easier peak detection without the direct measurement of spectra using a separate spectrometer. The proposed method will be a useful alternative to

  20. Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor

    NASA Astrophysics Data System (ADS)

    Asano, M.; Sekigawa, D.; Hara, K.; Aoyagi, W.; Honda, S.; Tobita, N.; Arai, Y.; Miyoshi, T.; Kurachi, I.; Tsuboyama, T.; Yamada, M.

    2016-09-01

    We are developing monolithic pixel sensors based on a 0.2 μm fully depleted silicon-on-insulator (FD-SOI) technology for high-energy physics experiment applications. With this SOI technology, the wafer resistivities for the electronics and sensor parts can be chosen separately. Therefore, a device with full depletion and fast charge collection is realized. The total ionizing dose (TID) effect is the major challenge for application in hard radiation environments. To compensate for TID damage, we introduced a double SOI structure that implements an additional middle silicon layer (SOI2 layer). Applying a negative voltage to the SOI2 layer should compensate for the effects induced by holes trapped in the buried oxide layers. We studied the recovery from TID damage induced by 60Co γ and other characteristics of the integration-type double SOI sensor INTPIXh2. When the double SOI sensor was irradiated to 100 kGy, it showed a response to the infrared laser similar to that of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. Thus, we concluded that the double SOI sensor is very effective at sufficiently enhancing the radiation hardness for application in experiments with harsh radiation environments, such as at Belle II or ILC.

  1. Pixel array detector for time-resolved x-ray scattering (invited)

    NASA Astrophysics Data System (ADS)

    Rodricks, Brian G.; Barna, Sandor L.; Gruner, Sol M.; Shepherd, John A.; Tate, Mark W.; Wixted, Robert L.

    1996-09-01

    This paper describes the development of a large area hybrid pixel detector designed for time-resolved synchrotron x-ray scattering experiments in which limited frames, with a high framing rate, are required. The final design parameters call for a 1024×1024 pixel array device with 150-micron pixels that is 100% quantum efficient for x-rays with energy up to 20 keV, with a framing rate in the microsecond range. The device will consist of a fully depleted diode array bump bonded to a CMOS electronic storage capacitor array with eight frames per pixel. The two devices may be separated by a x-ray blocking layer that protects the radiation-sensitive electronics layer from damage. The signal is integrated in the electronics layer and stored in one of eight CMOS capacitors. After eight frames are taken, the data are then read out, using clocking electronics external to the detector, and stored in a RAM disk. Results will be presented on the development of a prototype 4×4 pixel electronics layer that is capable of storing at least 10,000 12-keV x-ray photons for a capacity of over 50 million electrons with a noise corresponding to 2 x-ray photons per pixel. The diode detective layer and electronics storage layer along with the radiation damage and blocking layers will be discussed.

  2. 3 mega-pixel InSb detector with 10μm pitch

    NASA Astrophysics Data System (ADS)

    Gershon, G.; Albo, A.; Eylon, M.; Cohen, O.; Calahorra, Z.; Brumer, M.; Nitzani, M.; Avnon, E.; Aghion, Y.; Kogan, I.; Ilan, E.; Shkedy, L.

    2013-06-01

    SCD has developed a new 1920x1536 / 10 μm digital Infrared detector for the MWIR window named Blackbird. The Blackbird detector features a Focal Plane Array (FPA) that incorporates two technological building blocks developed over the past few years. The first one is a 10 μm InSb pixel based on the matured planar technology. The second building block is an innovative 10 μm ReadOut Integrated Circuit (ROIC) pixel. The InSb and the ROIC arrays are connected using Flip-Chip technology by means of indium bumps. The digital ROIC consists a matrix of 1920x1536 pixels and has an analog to digital (A/D) converter per-channel (total of 1920x2 A/Ds). It allows for full frame readout at a high frame rate of up to 120 Hz. Such an on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The ROIC power consumption at maximum bandwidth is less than 400 mW. It features a wide range of pixel-level functionality such as several conversion gain options and a 2x2 pixel binning. The ROIC design makes use of the advanced and matured CMOS technology, 0.18 μm, which allows for high functionality and relatively low power consumption. The FPA is mounted on a Cold-Finger by a specially designed ceramic substrate. The whole assembly is housed in a stiffened Dewar that withstands harsh environmental conditions while minimizing the environment heat load contribution to the heat load of the detector. The design enables a 3-megapixel detector with overall low size, weight, and power (SWaP) with respect to comparable large format detectors. In this work we present in detail the characteristic performance of the new Blackbird detector.

  3. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  4. The LAMBDA photon-counting pixel detector and high-Z sensor development

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Smoljanin, S.; Struth, B.; Hirsemann, H.; Fauler, A.; Fiederle, M.; Tolbanov, O.; Zarubin, A.; Tyazhev, A.; Shelkov, G.; Graafsma, H.

    2014-12-01

    Many X-ray experiments at third-generation synchrotrons benefit from using single-photon-counting detectors, due to their high signal-to-noise ratio and potential for high-speed measurements. LAMBDA (Large Area Medipix3-Based Detector Array) is a pixel detector system based on the Medipix3 readout chip. It combines the features of Medipix3, such as a small pixel size of 55 μm and flexible functionality, with a large tileable module design consisting of 12 chips (1536 × 512 pixels) and a high-speed readout system capable of running at 2000 frames per second. To enable high-speed experiments with hard X-rays, the LAMBDA system has been combined with different high-Z sensor materials. Room-temperature systems using GaAs and CdTe systems have been produced and tested with X-ray tubes and at synchrotron beamlines. Both detector materials show nonuniformities in their raw image response, but the pixel yield is high and the uniformity can be improved by flat-field correction, particularly in the case of GaAs. High-frame-rate experiments show that useful information can be gained on millisecond timescales in synchrotron experiments with these sensors.

  5. A near-infrared 64-pixel superconducting nanowire single photon detector array with integrated multiplexed readout

    SciTech Connect

    Allman, M. S. Verma, V. B.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Mirin, R.; Nam, S. W.; Marsili, F.; Beyer, A.; Shaw, M. D.; Kumor, D.

    2015-05-11

    We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array as well as characterization measurements are discussed.

  6. MÖNCH, a small pitch, integrating hybrid pixel detector for X-ray applications

    NASA Astrophysics Data System (ADS)

    Dinapoli, R.; Bergamaschi, A.; Cartier, S.; Greiffenberg, D.; Johnson, I.; Jungmann, J. H.; Mezza, D.; Mozzanica, A.; Schmitt, B.; Shi, X.; Tinti, G.

    2014-05-01

    PSI is developing several new detector families based on charge integration and analog readout (CI) to respond to the needs of X-ray free electron lasers (XFELs), where a signal up to ~ 104 photons impinging simultaneously on a pixel make single photon counting detectors unusable. MÖNCH is a novel hybrid silicon pixel detector where CI is combined with a challengingly small pixel size of 25 × 25 μm2. CI enables the detector to process several incoming photon simultaneously in XFEL applications. Moreover, due to the small pixel size, the charge produced by an impinging photon is often shared. In low flux experiments the analog information provided by single photons can be used either to obtain spectral information or to improve the position resolution by interpolation. Possible applications are resonant and non-resonant inelastic X-ray scattering or X-ray tomography with X-ray tubes. Two prototype ASICs were designed in UMC 110 nm technology. MÖNCH01 contains only some test cells used to assess technology performance and make basic design choices. MÖNCH02 is a fully functional, small scale prototype of 4 × 4 mm2, containing an array of 160 × 160 pixels. This array is subdivided in five blocks, each featuring a different pixel architecture. Two blocks have statically selectable preamplifier gains and target synchrotron applications. In low gain mode they should provide single photon sensitivity (at 6-12 keV) as well as a reasonable dynamic range for such a small area ( > 120 photons). In high gain they target high resolution, low flux experiments where charge sharing can be exploited to reach μm resolution. Three other architectures address possible uses at XFELs and implement automatic switching between two gains to increase the dynamic range, as well as input overvoltage control. The paper presents the MÖNCH project and first results obtained with the MÖNCH02 prototype.

  7. Simultaneous real-time visible and infrared video with single-pixel detectors

    NASA Astrophysics Data System (ADS)

    Edgar, Matthew. P.; Gibson, Graham M.; Bowman, Richard W.; Sun, Baoqing; Radwell, Neal; Mitchell, Kevin J.; Welsh, Stephen S.; Padgett, Miles J.

    2015-05-01

    Conventional cameras rely upon a pixelated sensor to provide spatial resolution. An alternative approach replaces the sensor with a pixelated transmission mask encoded with a series of binary patterns. Combining knowledge of the series of patterns and the associated filtered intensities, measured by single-pixel detectors, allows an image to be deduced through data inversion. In this work we extend the concept of a ‘single-pixel camera’ to provide continuous real-time video at 10 Hz , simultaneously in the visible and short-wave infrared, using an efficient computer algorithm. We demonstrate our camera for imaging through smoke, through a tinted screen, whilst performing compressive sampling and recovering high-resolution detail by arbitrarily controlling the pixel-binning of the masks. We anticipate real-time single-pixel video cameras to have considerable importance where pixelated sensors are limited, allowing for low-cost, non-visible imaging systems in applications such as night-vision, gas sensing and medical diagnostics.

  8. Simultaneous real-time visible and infrared video with single-pixel detectors.

    PubMed

    Edgar, Matthew P; Gibson, Graham M; Bowman, Richard W; Sun, Baoqing; Radwell, Neal; Mitchell, Kevin J; Welsh, Stephen S; Padgett, Miles J

    2015-01-01

    Conventional cameras rely upon a pixelated sensor to provide spatial resolution. An alternative approach replaces the sensor with a pixelated transmission mask encoded with a series of binary patterns. Combining knowledge of the series of patterns and the associated filtered intensities, measured by single-pixel detectors, allows an image to be deduced through data inversion. In this work we extend the concept of a 'single-pixel camera' to provide continuous real-time video at 10 Hz , simultaneously in the visible and short-wave infrared, using an efficient computer algorithm. We demonstrate our camera for imaging through smoke, through a tinted screen, whilst performing compressive sampling and recovering high-resolution detail by arbitrarily controlling the pixel-binning of the masks. We anticipate real-time single-pixel video cameras to have considerable importance where pixelated sensors are limited, allowing for low-cost, non-visible imaging systems in applications such as night-vision, gas sensing and medical diagnostics. PMID:26001092

  9. Simultaneous real-time visible and infrared video with single-pixel detectors.

    PubMed

    Edgar, Matthew P; Gibson, Graham M; Bowman, Richard W; Sun, Baoqing; Radwell, Neal; Mitchell, Kevin J; Welsh, Stephen S; Padgett, Miles J

    2015-01-01

    Conventional cameras rely upon a pixelated sensor to provide spatial resolution. An alternative approach replaces the sensor with a pixelated transmission mask encoded with a series of binary patterns. Combining knowledge of the series of patterns and the associated filtered intensities, measured by single-pixel detectors, allows an image to be deduced through data inversion. In this work we extend the concept of a 'single-pixel camera' to provide continuous real-time video at 10 Hz , simultaneously in the visible and short-wave infrared, using an efficient computer algorithm. We demonstrate our camera for imaging through smoke, through a tinted screen, whilst performing compressive sampling and recovering high-resolution detail by arbitrarily controlling the pixel-binning of the masks. We anticipate real-time single-pixel video cameras to have considerable importance where pixelated sensors are limited, allowing for low-cost, non-visible imaging systems in applications such as night-vision, gas sensing and medical diagnostics.

  10. 18k Channels single photon counting readout circuit for hybrid pixel detector

    NASA Astrophysics Data System (ADS)

    Maj, P.; Grybos, P.; Szczygiel, R.; Zoladz, M.; Sakumura, T.; Tsuji, Y.

    2013-01-01

    We have performed measurements of an integrated circuit named PXD18k designed for hybrid pixel semiconductor detectors used in X-ray imaging applications. The PXD18k integrated circuit, fabricated in CMOS 180 nm technology, has dimensions of 9.64 mm×20 mm and contains approximately 26 million transistors. The core of the IC is a matrix of 96×192 pixels with 100 μm×100 μm pixel size. Each pixel works in a single photon counting mode. A single pixel contains two charge sensitive amplifiers with Krummenacher feedback scheme, two shapers, two discriminators (with independent thresholds A and B) and two 16-bit ripple counters. The data are read out via eight low voltage differential signaling (LVDS) outputs with 100 Mbps rate. The power consumption is dominated by analog blocks and it is about 23 μW/pixel. The effective peaking time at the discriminator input is 30 ns and is mainly determined by the time constants of the charge sensitive amplifier (CSA). The gain is equal to 42.5 μV/e- and the equivalent noise charge is 168 e- rms (with bump-bonded silicon pixel detector). Thanks to the use of trim DACs in each pixel, the effective threshold spread at the discriminator input is only 1.79 mV. The dead time of the front end electronics for a standard setting is 172 ns (paralyzable model). In the standard readout mode (when the data collection time is separated from the time necessary to readout data from the chip) the PXD18k IC works with two energy thresholds per pixel. The PXD18k can also be operated in the continuous readout mode (with a zero dead time) where one can select the number of bits readout from each pixel to optimize the PXD18k frame rate. For example, for reading out 16 bits/pixel the frame rate is 2.7 kHz and for 4 bits/pixel it rises to 7.1 kHz.

  11. XPAD X-ray hybrid pixel detector for charge density quality diffracted intensities on laboratory equipment.

    PubMed

    Wenger, Emmanuel; Dahaoui, Slimane; Alle, Paul; Parois, Pascal; Palin, Cyril; Lecomte, Claude; Schaniel, Dominik

    2014-10-01

    The new generation of X-ray detectors, the hybrid pixel area detectors or `pixel detectors', is based on direct detection and single-photon counting processes. A large linearity range, high dynamic and extremely low noise leading to an unprecedented high signal-to-noise ratio, fast readout time (high frame rates) and an electronic shutter are among their intrinsic characteristics which render them very attractive. First used on synchrotron beamlines, these detectors are also promising in the laboratory, in particular for pump-probe or quasi-static experiments and accurate electron density measurements, as explained in this paper. An original laboratory diffractometer made from a Nonius Mach3 goniometer equipped with an Incoatec Mo microsource and an XPAD pixel area detector has been developed at the CRM2 laboratory. Mo Kα accurate charge density quality data up to 1.21 Å(-1) resolution have been collected on a sodium nitroprusside crystal using this home-made diffractometer. Data quality for charge density analysis based on multipolar modelling are discussed in this paper. Deformation electron densities are compared to those already published (based on data collected with CCD APEXII and CAD4 diffractometers). PMID:25274511

  12. Analysis of Full Charge Reconstruction Algorithms for X-Ray Pixelated Detectors

    SciTech Connect

    Baumbaugh, A.; Carini, G.; Deptuch, G.; Grybos, P.; Hoff, J.; Siddons, P., Maj.; Szczygiel, R.; Trimpl, M.; Yarema, R.; /Fermilab

    2012-05-21

    Existence of the natural diffusive spread of charge carriers on the course of their drift towards collecting electrodes in planar, segmented detectors results in a division of the original cloud of carriers between neighboring channels. This paper presents the analysis of algorithms, implementable with reasonable circuit resources, whose task is to prevent degradation of the detective quantum efficiency in highly granular, digital pixel detectors. The immediate motivation of the work is a photon science application requesting simultaneous timing spectroscopy and 2D position sensitivity. Leading edge discrimination, provided it can be freed from uncertainties associated with the charge sharing, is used for timing the events. Analyzed solutions can naturally be extended to the amplitude spectroscopy with pixel detectors.

  13. Analysis of full charge reconstruction algorithms for x-ray pixelated detectors

    SciTech Connect

    Baumbaugh, A.; Carini, G.; Deptuch, G.; Grybos, P.; Hoff, J.; Siddons, P., Maj.; Szczygiel, R.; Trimpl, M.; Yarema, R.; /Fermilab

    2011-11-01

    Existence of the natural diffusive spread of charge carriers on the course of their drift towards collecting electrodes in planar, segmented detectors results in a division of the original cloud of carriers between neighboring channels. This paper presents the analysis of algorithms, implementable with reasonable circuit resources, whose task is to prevent degradation of the detective quantum efficiency in highly granular, digital pixel detectors. The immediate motivation of the work is a photon science application requesting simultaneous timing spectroscopy and 2D position sensitivity. Leading edge discrimination, provided it can be freed from uncertainties associated with the charge sharing, is used for timing the events. Analyzed solutions can naturally be extended to the amplitude spectroscopy with pixel detectors.

  14. Prototype characterization of the JUNGFRAU pixel detector for SwissFEL

    NASA Astrophysics Data System (ADS)

    Mozzanica, A.; Bergamaschi, A.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Johnson, I.; Jungmann, J.; Maliakal, D.; Mezza, D.; Ruder, C.; Schaedler, L.; Schmitt, B.; Shi, X.; Tinti, G.

    2014-05-01

    The SwissFEL, a free electron laser (FEL) based next generation X-ray source, is being built at PSI. An XFEL poses several challenges to the detector development: in particular the single photon counting readout, a successful scheme in case of synchrotron sources, can not be used. At the same time the data quality of photon counting systems, i.e. the low noise and the high dynamic range, is essential from an experimental point of view. Detectors with these features are under development for the EU-XFEL in Hamburg, with the PSI SLS Detector group being involved in one of these efforts (AGIPD). The pulse train time structure of the EU-XFEL machine forces the need of in pixel image storage, resulting in pixel pitches in the 200 μm range. Since the SwissFEL is a 100 Hz repetition rate machine, this constrain is relaxed. For this reason, PSI is developing a 75 μm pitch pixel detector that, thanks to its automatic gain switching technique, will achieve single photon resolution and a high dynamic range. The detector is modular, with each module consisting of a 4 × 8 cm2 active sensor bump bonded to 8 readout ASICs (Application Specific Integrated Circuit), connected to a single printed circuit readout board with 10GbE link capabilities for data download. We have designed and tested a 48 × 48 pixel prototype produced in UMC110 nm technology. In this paper we present the general detector and ASIC design as well as the results of the prototype characterization measurements.

  15. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    NASA Astrophysics Data System (ADS)

    Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  16. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Jaggi, A; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10(4) photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm(2) pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm(2). Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  17. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    SciTech Connect

    Jungmann-Smith, J. H. Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.; Cartier, S.; Medjoubi, K.

    2015-12-15

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  18. A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

    2015-01-01

    The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

  19. Development of a Prototype for the Fluorescence Detector Array of Single-Pixel Telescopes

    NASA Astrophysics Data System (ADS)

    Fujii, T.; Malacari, M.; Bertaina, M.; Casolino, M.; Dawson, B.; Jiang, J.; Matalon, A.; Matthews, J. N.; Motloch, P.; Privitera, P.; Takizawa, Y.; Yamazaki, K.

    We present a concept for large-area, low-cost detection of ultra-high energy cosmic rays (UHECR) with a Fluorescence detector Array of Single-pixel Telescopes (FAST), addressing the requirements for the next generation of UHECR experiments. In the FAST design, a large field of view is covered by a few pixels at the focal plane of a mirror or Fresnel lens. We report preliminary results of a FAST prototype installed at the Telescope Array site, consisting of a single 200 mm photo-multiplier tube at the focal plane of a 1 m2 Fresnel lens system taken from the prototype of the JEM-EUSO experiment.

  20. Comparison of CCD, CMOS and Hybrid Pixel x-ray detectors: detection principle and data quality

    NASA Astrophysics Data System (ADS)

    Allé, P.; Wenger, E.; Dahaoui, S.; Schaniel, D.; Lecomte, C.

    2016-06-01

    We compare, from a crystallographic point of view, the data quality obtained using laboratory x-ray diffractometers equipped with a Molybdenum micro-source using different detector types: CCD, CMOS and XPAD hybrid pixel. First we give an overview of the working principle of these different detector types with a focus on their principal differences and their impact on the data quality. Then, using the example of an organic crystal, a comparison between the detector systems concerning the raw data statistics, the refinement agreement factors, the deformation electron density maps, and the residual density after multipolar refinement is presented. It is found that the data quality obtained with the XPAD detector is the best, even though the detection efficiency at the Mo energy (17.5 keV) is only 37% due to the Si-sensor layer thickness of 300 μm. Finally, we discuss the latest x-ray detector developments with an emphasis on the sensor material, where replacing Si by another material such as GaAs would yield detection efficiencies close to 100%, up to energies of 40 keV for hybrid pixel detectors.

  1. Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

    PubMed

    Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

    2015-03-01

    High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

  2. Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

    NASA Astrophysics Data System (ADS)

    Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-01

    Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to

  3. Modeling and Analysis of Hybrid Pixel Detector Deficiencies for Scientific Applications

    SciTech Connect

    Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-28

    Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to

  4. Optimizing Pinhole and Parallel Hole Collimation for Scintimammography with Compact Pixellated Detectors

    SciTech Connect

    Mark F. Smith; Douglas A. Kieper; Stan Majewski; Andrew G. Weisenberger; Benjamin Welch

    2002-11-01

    The relative advantages of pinhole and parallel hole collimators for scintimammography with compact, pixellated gamma detectors were investigated using analytic models of resolution and sensitivity. Collimator design was studied as follows. A desired object resolution was specified for a pixellated detector with a given crystal size and intrinsic spatial resolution and for a given object-to-collimator distance. Using analytic formulas, pinhole and parallel hole collimator parameters were calculated that satisfy this object resolution with optimal geometric sensitivity. Analyses were performed for 15 cm x 20 cm field of view detectors with crystal elements 1.0, 2.0 and 3.0 mm on a side and 140 keV incident photons. The sensitivity for a given object resolution was greater for pinhole collimation at smaller distances, as expected. The object distance at which the pinhole and parallel hole sensitivity curves cross each other is important. The crossover distances increased with larger crystal size for a constant object resolution and increased as the desired object resolution decreases for a constant crystal size. For example, for 4 mm object resolution these distances were 5.5 cm, 6.5 cm and 8 cm for the 1 mm, 2 mm and 3 mm crystal detectors, respectively. The results suggest a strategy of parallel hole collimation for whole breast imaging and pinhole collimation for imaging focal uptake. This could be accomplished with a dual detector system with a different collimator type on each head or a single head system equipped with two collimators and a rapid switching mechanism. Multipinhole collimators have the potential to increase sensitivity yet maintain high image resolution. An experimental SPECT phantom study with a four-pinhole collimator was acquired with a pixellated detector. The iterative maximum-likelihood expectation- maximization (MLEM) reconstruction of a hot sphere in a warm cylinder showed the potential of multipinhole collimation to improve sensitivity

  5. A novel approach in the free-electron laser diagnosis based on a pixelated phosphor detector.

    PubMed

    Matruglio, Alessia; Dal Zilio, Simone; Sergo, Rudi; Mincigrucci, Riccardo; Svetina, Cristian; Principi, Emiliano; Mahne, Nicola; Raimondi, Lorenzo; Turchet, Alessio; Masciovecchio, Claudio; Lazzarino, Marco; Cautero, Giuseppe; Zangrando, Marco

    2016-01-01

    A new high-performance method for the free-electron laser (FEL) focused beam diagnosis has been successfully tested at the FERMI FEL in Trieste, Italy. The novel pixelated phosphor detector (PPD) consists of micrometric pixels produced by classical UV lithography and dry etching technique, fabricated on a silicon substrate, arranged in a hexagonal geometry and filled with suitable phosphors. It has been demonstrated that the overall resolution of the system has increased by reducing the diffusion of the light in the phosphors. Various types of PPD have been produced and tested, demonstrating a high resolution in the beam profile and the ability to measure the actual spot size shot-to-shot with an unprecedented resolution. For these reasons, the proposed detector could become a reference technique in the FEL diagnosis field. PMID:26698042

  6. Low-noise custom VLSI for CdZnTe pixel detectors

    NASA Astrophysics Data System (ADS)

    Cook, Walter R.; Burnham, Jill A.; Harrison, Fiona A.

    1998-11-01

    A custom analog VLSI chip is being developed for the readout of pixelated CdZnTe detectors in the focal plane of an astronomical hard x-ray telescope. The chip is intended for indium bump bonding to a pixel detector having pitch near 0.5 mm. A complete precision analog signal processing chain, including charge sensitive preamplifier, shaping amplifiers and peak detect and hold circuit, is provided for each pixel. Here we describe the circuitry and discus the performance of a functional prototype fabricated in a 1.2 micrometers CMOS process at Orbit Semiconductor. Dynamic performance is found to be close to SPICE model predictions over a self-triggering range extending from 1 to 50 keV. Integral non-linearity and noise while acceptable ar not as god as predicted. Power consumption is only 250 uW per pixel. Layout and design techniques are discussed which permit successful self-triggering operation at the low 1 keV threshold.

  7. A DC-DC converter based powering scheme for the upgrade of the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Feld, L.; Karpinski, W.; Klein, K.; Merz, J.; Sammet, J.; Wlochal, M.

    2011-11-01

    Around 2016, the pixel detector of the CMS experiment will be upgraded. The amount of current that has to be provided to the front-end electronics is expected to increase by a factor of two. Since the space available for cables is limited, this would imply unacceptable power losses in the currently installed supply cables. Therefore it is foreseen to place DC-DC converters close to the front-end electronics, allowing the provision of power at higher voltages, thereby facilitating the supply of the required currents with the present cable plant. This conference report introduces the foreseen powering scheme of the pixel upgrade. For the first time, system tests have been conducted with pixel barrel sensor modules, radiation tolerant DC-DC converters and the full power supply chain of the pixel detector. In addition, studies of the stability of different powering schemes under various conditions are summarized. In particular the impact of large and fast load variations, which are related to the bunch structure of the LHC beam, has been studied.

  8. Firmware development and testing of the ATLAS Pixel Detector / IBL ROD card

    NASA Astrophysics Data System (ADS)

    Gabrielli, A.; Backhaus, M.; Balbi, G.; Bindi, M.; Chen, S. P.; Falchieri, D.; Flick, T.; Hauck, S.; Hsu, S. C.; Kretz, M.; Kugel, A.; Lama, L.; Travaglini, R.; Wensing, M.

    2015-03-01

    The ATLAS Experiment is reworking and upgrading systems during the current LHC shut down. In particular, the Pixel detector has inserted an additional inner layer called the Insertable B-Layer (IBL). The Readout-Driver card (ROD), the Back-of-Crate card (BOC), and the S-Link together form the essential frontend data path of the IBL's off-detector DAQ system. The strategy for IBL ROD firmware development was three-fold: keeping as much of the Pixel ROD datapath firmware logic as possible, employing a complete new scheme of steering and calibration firmware, and designing the overall system to prepare for a future unified code version integrating IBL and Pixel layers. Essential features such as data formatting, frontend-specific error handling, and calibration are added to the ROD data path. An IBL DAQ test bench using a realistic front-end chip model was created to serve as an initial framework for full offline electronic system simulation. In this document, major firmware achievements concerning the IBL ROD data path implementation, test on the test bench and ROD prototypes, will be reported. Recent Pixel collaboration efforts focus on finalizing hardware and firmware tests for the IBL. The plan is to approach a complete IBL DAQ hardware-software installation by the end of 2014.

  9. ATLAS-TPX: a two-layer pixel detector setup for neutron detection and radiation field characterization

    NASA Astrophysics Data System (ADS)

    Bergmann, B.; Caicedo, I.; Leroy, C.; Pospisil, S.; Vykydal, Z.

    2016-10-01

    A two-layer pixel detector setup (ATLAS-TPX), designed for thermal and fast neutron detection and radiation field characterization is presented. It consists of two segmented silicon detectors (256 × 256 pixels, pixel pitch 55 μm, thicknesses 300 μm and 500 μm) facing each other. To enhance the neutron detection efficiency a set of converter layers is inserted in between these detectors. The pixelation and the two-layer design allow a discrimination of neutrons against γs by pattern recognition and against charged particles by using the coincidence and anticoincidence information. The neutron conversion and detection efficiencies are measured in a thermal neutron field and fast neutron fields with energies up to 600 MeV. A Geant4 simulation model is presented, which is validated against the measured detector responses. The reliability of the coincidence and anticoincidence technique is demonstrated and possible applications of the detector setup are briefly outlined.

  10. Development of high data readout rate pixel module and detector hybridization at Fermilab

    SciTech Connect

    Sergio Zimmermann et al.

    2001-03-20

    This paper describes the baseline design and a variation of the pixel module to handle the data rate required for the BTeV experiment at Fermilab. The present prototype has shown good electrical performance characteristics. Indium bump bonding is proven to be capable of successful fabrication at 50 micron pitch on real detectors. For solder bumps at 50 micron pitch, much better results have been obtained with the fluxless PADS processed detectors. The results are adequate for our needs and our tests have validated it as a viable technology.

  11. Review of hybrid pixel detector readout ASICs for spectroscopic X-ray imaging

    NASA Astrophysics Data System (ADS)

    Ballabriga, R.; Alozy, J.; Campbell, M.; Frojdh, E.; Heijne, E. H. M.; Koenig, T.; Llopart, X.; Marchal, J.; Pennicard, D.; Poikela, T.; Tlustos, L.; Valerio, P.; Wong, W.; Zuber, M.

    2016-01-01

    Semiconductor detector readout chips with pulse processing electronics have made possible spectroscopic X-ray imaging, bringing an improvement in the overall image quality and, in the case of medical imaging, a reduction in the X-ray dose delivered to the patient. In this contribution we review the state of the art in semiconductor-detector readout ASICs for spectroscopic X-ray imaging with emphasis on hybrid pixel detector technology. We discuss how some of the key challenges of the technology (such as dealing with high fluxes, maintaining spectral fidelity, power consumption density) are addressed by the various ASICs. In order to understand the fundamental limits of the technology, the physics of the interaction of radiation with the semiconductor detector and the process of signal induction in the input electrodes of the readout circuit are described. Simulations of the process of signal induction are presented that reveal the importance of making use of the small pixel effect to minimize the impact of the slow motion of holes and hole trapping in the induced signal in high-Z sensor materials. This can contribute to preserve fidelity in the measured spectrum with relatively short values of the shaper peaking time. Simulations also show, on the other hand, the distortion in the energy spectrum due to charge sharing and fluorescence photons when the pixel pitch is decreased. However, using recent measurements from the Medipix3 ASIC, we demonstrate that the spectroscopic information contained in the incoming photon beam can be recovered by the implementation in hardware of an algorithm whereby the signal from a single photon is reconstructed and allocated to the pixel with the largest deposition.

  12. FITPix data preprocessing pipeline for the Timepix single particle pixel detector

    NASA Astrophysics Data System (ADS)

    Kraus, V.; Holik, M.; Jakubek, J.; Georgiev, V.

    2012-04-01

    The semiconductor pixel detector Timepix contains an array of 256 × 256 square pixels with a pitch of 55 μm. The single quantum counting detector Timepix can also provide information about the energy or arrival time of a particle from every single pixel. This device is a powerful tool for radiation imaging and ionizing particle tracking. The Timepix device can be read-out via a serial or parallel interface enabling speeds of 100 fps or 3200 fps, respectively. The device can be connected to a PC via the USB 2.0 based interface FITPix, which currently supports the serial output of Timepix reaching a speed of 90 fps. FITPix supports adjustable clock frequency and hardware triggering which is a useful tool for the synchronized operation of multiple devices. The FITPix interface can handle up to 16 detectors in daisy chain. The complete system including the FITPix interface and Timepix detector is controlled from the PC by the Pixelman software package. A pipeline structure is now implemented in the new version of the readout interface of FITPix. This version also supports parallel Timepix readout. The pipeline architecture brings the possibility of data preprocessing directly in the hardware. The first pipeline stage converts the raw Timepix data into the form of a matrix or stream of pixel values. Another stage performs further data processing such as event thresholding and data compression. Complex data processing currently performed by Pixelman in the PC is significantly reduced in this way. The described architecture together with the parallel readout increases data throughput reaching a higher frame-rate and reducing the dead time. Significant data compression is performed directly in the hardware especially for sparse data sets from particle tracking applications. The data frame size is typically compressed by factor of 10-100.

  13. Fully 3D-Integrated Pixel Detectors for X-Rays

    SciTech Connect

    Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; Grybos, Pawel; Holm, Scott; Lipton, Ronald; Maj, Piotr; Patti, Robert; Siddons, David Peter; Szczygiel, Robert; Yarema, Raymond

    2016-01-01

    The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch, yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e- rms and a conversion gain of 69.5 μV/e- with 2.6 e- rms and 2.7 μV/e- rms pixel-to-pixel variations, respectively, were measured.

  14. Development of a readout technique for the high data rate BTeV pixel detector at Fermilab

    SciTech Connect

    Bradley K Hall et al.

    2001-11-05

    The pixel detector for the BTeV experiment at Fermilab provides digitized data from approximately 22 million silicon pixel channels. Portions of the detector are six millimeters from the beam providing a substantial hit rate and high radiation dose. The pixel detector data will be employed by the lowest level trigger system for track reconstruction every beam crossing. These requirements impose a considerable constraint on the readout scheme. This paper presents a readout technique that provides the bandwidth that is adequate for high hit rates, minimizes the number of radiation hard components, and satisfies all other design constraints.

  15. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  16. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    NASA Astrophysics Data System (ADS)

    Esposito, M.; Anaxagoras, T.; Evans, P. M.; Green, S.; Manolopoulos, S.; Nieto-Camero, J.; Parker, D. J.; Poludniowski, G.; Price, T.; Waltham, C.; Allinson, N. M.

    2015-06-01

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

  17. Prototypes and system test stands for the Phase 1 upgrade of the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Hasegawa, S.

    2016-09-01

    The CMS pixel phase-1 upgrade project replaces the current pixel detector with an upgraded system with faster readout electronics during the extended year-end technical stop of 2016/2017. New electronics prototypes for the system have been developed, and tests in a realistic environment for a comprehensive evaluation are needed. A full readout test stand with either the same hardware as used in the current CMS pixel detector or the latest prototypes of upgrade electronics has been built. The setup enables the observation and investigation of a jitter increase in the data line associated with trigger rate increases. This effect is due to the way in which the clock and trigger distribution is implemented in CMS. A new prototype of the electronics with a PLL based on a voltage controlled quartz crystal oscillator (QPLL), which works as jitter filter, in the clock distribution path was produced. With the test stand, it was confirmed that the jitter increase is not seen with the prototype, and also good performance was confirmed at the expected detector operation temperature (-20 °C).

  18. Investigating the Inverse Square Law with the Timepix Hybrid Silicon Pixel Detector: A CERN [at] School Demonstration Experiment

    ERIC Educational Resources Information Center

    Whyntie, T.; Parker, B.

    2013-01-01

    The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN [at] school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an [superscript 241]Am radioactive source at a number of different…

  19. Application of Pixel-cell Detector Technology for Advanced Neutron Beam Monitors

    SciTech Connect

    Kopp, Daniel M.

    2011-01-11

    Application of Pixel-Cell Detector Technology for Advanced Neutron Beam Monitors Specifications of currently available neutron beam detectors limit their usefulness at intense neutron beams of large-scale national user facilities used for the advanced study of materials. A large number of neutron-scattering experiments require beam monitors to operate in an intense neutron beam flux of >10E+7 neutrons per second per square centimeter. For instance, a 4 cm x 4 cm intense beam flux of 6.25 x 10E+7 n/s/cm2 at the Spallation Neutron Source will put a flux of 1.00 x 10E+9 n/s at the beam monitor. Currently available beam monitors with a typical efficiency of 1 x 10E-4 will need to be replaced in less than two years of operation due to wire and gas degradation issues. There is also a need at some instruments for beam position information that are beyond the capabilities of currently available He-3 and BF3 neutron beam monitors. ORDELA, Inc.’s research under USDOE SBIR Grant (DE-FG02-07ER84844) studied the feasibility of using pixel-cell technology for developing a new generation of stable, long-life neutron beam monitors. The research effort has led to the development and commercialization of advanced neutron beam detectors that will directly benefit the Spallation Neutron Source and other intense neutron sources such as the High Flux Isotope Reactor. A prototypical Pixel-Cell Neutron Beam Monitor was designed and constructed during this research effort. This prototype beam monitor was exposed to an intense neutron beam at the HFIR SNS HB-2 test beam site. Initial measurements on efficiency, uniformity across the detector, and position resolution yielded excellent results. The development and test results have provided the required data to initiate the fabrication and commercialization of this next generation of neutron-detector systems. ORDELA, Inc. has (1) identified low-cost design and fabrication strategies, (2) developed and built pixel-cell detectors and

  20. ATLAS Pixel Detector ROD card from IBL towards Layers 2 and 1

    NASA Astrophysics Data System (ADS)

    Balbi, G.; Falchieri, D.; Gabrielli, A.; Lama, L.; Giangiacomi, N.; Travaglini, R.

    2016-01-01

    The incoming and future upgrades of LHC will require better performance by the data acquisition system, especially in terms of throughput due to the higher luminosity that is expected. For this reason, during the first shutdown of the LHC collider in 2013/14, the ATLAS Pixel Detector has been equipped with a fourth layer— the Insertable B-Layer or IBL—located at a radius smaller than the present three layers. To read out the new layer of pixels, with a smaller pixel size with respect to the other outer layers, a front end ASIC (FE-I4) was designed as well as a new off-detector read-out chain. The latter, accordingly to the structure of the other layers of pixels, is composed mainly of two 9U-VME read-out off-detector cards called the Back-Of-Crate (BOC) and Read-Out Driver (ROD). The ROD is used for data and event formatting and for configuration and control of the overall read-out electronics. After some prototyping samples were completed, a pre-production batch of 5 ROD cards was delivered with the final layout. Another production of 15 ROD cards was done in Fall 2013, and commissioning was completed in 2014. Altogether 14 cards are necessary for the 14 staves of the IBL detector, one additional card is required by the Diamond Beam Monitor (DBM), and additional spare ROD cards were produced for a total initial batch of 20 boards. This paper describes some integration tests that were performed and our plan to install the new DAQ chain for the layer 2, which is the outermost, and layer 1, which is external to the B-layer. This latter is the only layer that will not be upgraded to a higher readout speed. Rather, it will be switched off in the near future as it has too many damaged sensors that were not possible to rework. To do that, slices of the IBL read-out chain have been instrumented, and ROD performance is verified on a test bench mimicking a small-sized final setup. Thus, this contribution reports also how the adoption of the IBL ROD for ATLAS Pixel

  1. Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

    NASA Technical Reports Server (NTRS)

    Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.; Pospisil, S.; Turecek, D.; Kitamura, H.

    2014-01-01

    The current capabilities of modern pixel-detector technology has provided the possibility to design a new generation of radiation monitors. Timepix detectors are semiconductor pixel detectors based on a hybrid configuration. As such, the read-out chip can be used with different types and thicknesses of sensors. For space radiation dosimetry applications, Timepix devices with 300 and 500 microns thick silicon sensors have been used by a collaboration between NASA and University of Houston to explore their performance. For that purpose, an extensive evaluation of the response of Timepix for such applications has been performed. Timepix-based devices were tested in many different environments both at ground-based accelerator facilities such as HIMAC (Heavy Ion Medical Accelerator in Chiba, Japan), and at NSRL (NASA Space Radiation Laboratory at Brookhaven National Laboratory in Upton, NY), as well as in space on board of the International Space Station (ISS). These tests have included a wide range of the particle types and energies, from protons through iron nuclei. The results have been compared both with other devices and theoretical values. This effort has demonstrated that Timepix-based detectors are exceptionally capable at providing accurate dosimetry measurements in this application as verified by the confirming correspondence with the other accepted techniques.

  2. First neutron spectroscopy measurements with a pixelated diamond detector at JET

    NASA Astrophysics Data System (ADS)

    Muraro, A.; Giacomelli, L.; Nocente, M.; Rebai, M.; Rigamonti, D.; Belli, F.; Calvani, P.; Figueiredo, J.; Girolami, M.; Gorini, G.; Grosso, G.; Murari, A.; Popovichev, S.; Trucchi, D. M.; Tardocchi, M.

    2016-11-01

    A prototype Single crystal Diamond Detector (SDD) was installed at the Joint European Torus (JET) in 2013 along an oblique line of sight and demonstrated the possibility to carry out neutron spectroscopy measurements with good energy resolution and detector stability in discharges heated by neutral beam injection and radio-frequency waves. Starting from these positive results, within the Vertical Neutron Spectrometer project of the Joint European Torus, we have developed a pixelated instrument consisting of a matrix of 12 independent SDDs, called the Diamond Vertical Neutron Spectrometer (DVNS), which boosts the detection efficiency of a single SDD by an order of magnitude. In this paper we describe the main features of the DVNS, including the detector design, energy resolution, and data acquisition system for on-line processing. Preliminary spectroscopy measurements of 2.5 MeV neutrons from the present deuterium plasma at JET are finally presented.

  3. New-type silicon bipolar-pixel detector with internal amplification

    NASA Astrophysics Data System (ADS)

    Chubenko, A. P.; Karmanov, D. E.; Legotin, S. A.; Mukhamedshin, R. A.; Murashev, V. N.

    2009-12-01

    New-type silicon detector of charged particles and photons with internal amplification is considered. Bipolar npn-transistor pixel placed on a high-purity n-type silicon substrate is the functional element of the detector. The range being sensitive to ionization is a low-doped ( N˜10 cm) n region of the collector with a thickness virtually coinciding with the substrate thickness. A thin base containing one or more n emitters is formed on the surface. The current-amplification gain factor of the emitterbase junction is about 30. Detector prototypes are manufactured in the form of transistor matrices of 3×3 mm and 6×6 mm dimensions with a interpixel spacing of 50 and 100 microns. Results of testing of matrices are presented. The work is supported by the International Science and Technology Center, Project # 3024.

  4. Improving detector spatial resolution using pixelated scintillators with a barrier rib structure

    NASA Astrophysics Data System (ADS)

    Liu, Langechuan; Lu, Minghui; Cao, Wanqing; Peng, Luke; Chen, Arthur

    2016-03-01

    Indirect conversion flat panel detectors (FPDs) based on amorphous silicon (a-Si) technology are widely used in digital X-ray imaging. In such FPDs a scintillator layer is used for converting X-rays into visible light photons. However, the lateral spread of these photons inside the scintillator layer reduces spatial resolution of the FPD. In this study, FPDs incorporating pixelated scintillators with a barrier rib structure were developed to limit lateral spread of light photons thereby improving spatial resolution. For the pixelated scintillator, a two-dimensional barrier rib structure was first manufactured on a substrate layer, coated with reflective materials, and filled to the rim with the scintillating material of gadolinium oxysulfide (GOS). Several scintillator samples were fabricated, with pitch size varying from 160 to 280 μm and rib height from 200 to 280 μm. The samples were directly coupled to an a-Si flat panel photodiode array with a pitch of 200 μm to convert optical photons to electronic signals. With the pixelated scintillator, the detector modulation transfer function was shown to improve significantly (by 94% at 2 cycle/mm) compared to a detector using an unstructured GOS layer. However, the prototype does show lower sensitivity due to the decrease in scintillator fill factor. The preliminary results demonstrated the feasibility of using the barrier-rib structure to improve the spatial resolution of FPDs. Such an improvement would greatly benefit nondestructive testing applications where the spatial resolution is the most important parameter. Further investigation will focus on improving the detector sensitivity and exploring its medical applications.

  5. Response of a hybrid pixel detector (MEDIPIX3) to different radiation sources for medical applications

    SciTech Connect

    Chumacero, E. Miguel; De Celis Alonso, B.; Martínez Hernández, M. I.; Vargas, G.; Moreno Barbosa, E.; Moreno Barbosa, F.

    2014-11-07

    The development in semiconductor CMOS technology has enabled the creation of sensitive detectors for a wide range of ionizing radiation. These devices are suitable for photon counting and can be used in imaging and tomography X-ray diagnostics. The Medipix[1] radiation detection system is a hybrid silicon pixel chip developed for particle tracking applications in High Energy Physics. Its exceptional features (high spatial and energy resolution, embedded ultra fast readout, different operation modes, etc.) make the Medipix an attractive device for applications in medical imaging. In this work the energy characterization of a third-generation Medipix chip (Medipix3) coupled to a silicon sensor is presented. We used different radiation sources (strontium 90, iron 55 and americium 241) to obtain the response curve of the hybrid detector as a function of energy. We also studied the contrast of the Medipix as a measure of pixel noise. Finally we studied the response to fluorescence X rays from different target materials (In, Pd and Cd) for the two data acquisition modes of the chip; single pixel mode and charge summing mode.

  6. Response of a hybrid pixel detector (MEDIPIX3) to different radiation sources for medical applications

    NASA Astrophysics Data System (ADS)

    Chumacero, E. Miguel; De Celis Alonso, B.; Martínez Hernández, M. I.; Vargas, G.; Moreno Barbosa, F.; Moreno Barbosa, E.

    2014-11-01

    The development in semiconductor CMOS technology has enabled the creation of sensitive detectors for a wide range of ionizing radiation. These devices are suitable for photon counting and can be used in imaging and tomography X-ray diagnostics. The Medipix[1] radiation detection system is a hybrid silicon pixel chip developed for particle tracking applications in High Energy Physics. Its exceptional features (high spatial and energy resolution, embedded ultra fast readout, different operation modes, etc.) make the Medipix an attractive device for applications in medical imaging. In this work the energy characterization of a third-generation Medipix chip (Medipix3) coupled to a silicon sensor is presented. We used different radiation sources (strontium 90, iron 55 and americium 241) to obtain the response curve of the hybrid detector as a function of energy. We also studied the contrast of the Medipix as a measure of pixel noise. Finally we studied the response to fluorescence X rays from different target materials (In, Pd and Cd) for the two data acquisition modes of the chip; single pixel mode and charge summing mode.

  7. Pixelated detectors and improved efficiency for magnetic imaging in STEM differential phase contrast.

    PubMed

    Krajnak, Matus; McGrouther, Damien; Maneuski, Dzmitry; Shea, Val O'; McVitie, Stephen

    2016-06-01

    The application of differential phase contrast imaging to the study of polycrystalline magnetic thin films and nanostructures has been hampered by the strong diffraction contrast resulting from the granular structure of the materials. In this paper we demonstrate how a pixelated detector has been used to detect the bright field disk in aberration corrected scanning transmission electron microscopy (STEM) and subsequent processing of the acquired data allows efficient enhancement of the magnetic contrast in the resulting images. Initial results from a charged coupled device (CCD) camera demonstrate the highly efficient nature of this improvement over previous methods. Further hardware development with the use of a direct radiation detector, the Medipix3, also shows the possibilities where the reduction in collection time is more than an order of magnitude compared to the CCD. We show that this allows subpixel measurement of the beam deflection due to the magnetic induction. While the detection and processing is data intensive we have demonstrated highly efficient DPC imaging whereby pixel by pixel interpretation of the induction variation is realised with great potential for nanomagnetic imaging. PMID:27085170

  8. New concept of a submillimetric pixellated Silicon detector for intracerebral application

    NASA Astrophysics Data System (ADS)

    Benoit, M.; Märk, J.; Weiss, P.; Benoit, D.; Clemens, J. C.; Fougeron, D.; Janvier, B.; Jevaud, M.; Karkar, S.; Menouni, M.; Pain, F.; Pinot, L.; Morel, C.; Laniece, P.

    2011-12-01

    A new beta+ radiosensitive microprobe implantable in rodent brain dedicated to in vivo and autonomous measurements of local time activity curves of beta radiotracers in a volume of brain tissue of a few mm3 has been developed recently. This project expands the concept of the previously designed beta microprobe, which has been validated extensively in neurobiological experiments performed on anesthetized animals. Due to its limitations considering recordings on awake and freely moving animals, we have proposed to develop a wireless setup that can be worn by an animal without constraining its movements. To that aim, we have chosen a highly beta sensitive Silicon-based detector to devise a compact pixellated probe. Miniaturized wireless electronics is used to read-out and transfer the measurement data. Initial Monte-Carlo simulations showed that high resistive Silicon pixels are appropriate for this purpose, with their dimensions to be adapted to our specific signals. More precisely, we demonstrated that 200 μm thick pixels with an area of 200 μm×500 μm are optimized in terms of beta+sensitivity versus relative transparency to the gamma background. Based on this theoretical study, we now present the development of the novel sensor, including the system simulations with technology computer-assisted design (TCAD) to investigate specific configurations of guard rings and their potential to increase the electrical isolation and stabilization of the pixel, as well as the corresponding physical tests to validate the particular geometries of this new sensor.

  9. Evaluation of a photon-counting hybrid pixel detector array with a synchrotron X-ray source

    NASA Astrophysics Data System (ADS)

    Ponchut, C.; Visschers, J. L.; Fornaini, A.; Graafsma, H.; Maiorino, M.; Mettivier, G.; Calvet, D.

    2002-05-01

    A photon-counting hybrid pixel detector (Medipix-1) has been characterized using a synchrotron X-ray source. The detector consists of a readout ASIC with 64×64 independent photon-counting cells of 170×170 μm 2 pitch, bump-bonded to a 300 μm thick silicon sensor, read out by a PCIbus-based electronics, and a graphical user interface (GUI) software. The intensity and the energy tunability of the X-ray source allow characterization of the detector in the time, space, and energy domains. The system can be read out on external trigger at a frame rate of 100 Hz with 3 ms exposure time per frame. The detector response is tested up to more than 7×10 5 detected events/pixel/s. The point-spread response shows <2% crosstalk between neighboring pixels. Fine scanning of the detector surface with a 10 μm beam reveals no loss in sensitivity between adjacent pixels as could result from charge sharing in the silicon sensor. Photons down to 6 keV can be detected after equalization of the thresholds of individual pixels. The obtained results demonstrate the advantages of photon-counting hybrid pixel detectors and particularly of the Medipix-1 chip for a wide range of X-ray imaging applications, including those using synchrotron X-ray beams.

  10. Development of an X-ray imaging system with SOI pixel detectors

    NASA Astrophysics Data System (ADS)

    Nishimura, Ryutaro; Arai, Yasuo; Miyoshi, Toshinobu; Hirano, Keiichi; Kishimoto, Shunji; Hashimoto, Ryo

    2016-09-01

    An X-ray imaging system employing pixel sensors in silicon-on-insulator technology is currently under development. The system consists of an SOI pixel detector (INTPIX4) and a DAQ system based on a multi-purpose readout board (SEABAS2). To correct a bottleneck in the total throughput of the DAQ of the first prototype, parallel processing of the data taking and storing processes and a FIFO buffer were implemented for the new DAQ release. Due to these upgrades, the DAQ throughput was improved from 6 Hz (41 Mbps) to 90 Hz (613 Mbps). The first X-ray imaging system with the new DAQ software release was tested using 33.3 keV and 9.5 keV mono X-rays for three-dimensional computerized tomography. The results of these tests are presented.

  11. Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

    NASA Astrophysics Data System (ADS)

    Fourches, N. T.; Chipaux, R.

    2015-01-01

    Silicon detectors have gained in popularity since silicon became a widely used electronic semiconductor material. Silicon detectors are used in particle physics as well as imagers for pixel based detecting systems. Over the past twenty years a lot of experimental efforts have been focused on the effects of ionizing and non-ionizing radiation on silicon based detectors including charged coupled devices (CCDs). Some of this research was performed in the framework of high luminosity particle physics experiments, along with radiation hardness studies of basic semiconductors devices. The building blocks of silicon pixel detectors including CCDs are simple PIN or PN structures partially or totally depleted, or even MOS and APD (Avalanche PhotoDiode) structures. Bulk or surface defects considerably affect the transport of free carriers. We propose here guidelines for pixel design. The method takes into account the properties of defects and will be tested through two pixel structures. The electrical properties of defects can be reduced to basic parameters, which can be introduced in a standard simulation code to make predictive simulations. We include an analytical model for defect build up derived from isochronal annealing experiments. Studying pixels detectors with different geometrical structures and fabricated with various semiconducting materials is made possible with this method. Its purpose is to provide an alternative to tedious and extensive radiation tests on fabricated detectors. Predicting the pixel behaviour w.r.t. defect properties is necessary for the long-term reliability of detectors and for making them radiation hard. A general method for pixel design is introduced and we will show how it can be used for the design of alternative (germanium) pixels.

  12. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    PubMed

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18)F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8.

  13. Optimizing Pinhole and Parallel Hole Collimation for Scintimammography With Compact Pixellated Detectors

    SciTech Connect

    Mark F. Smith; Stan Majewski; Andrew G. Weisenberger

    2002-11-01

    The relative resolution and sensitivity advantages of pinhole and parallel hole collimators for planar scintimammography with compact, pixellated gamma detectors were investigated using analytic models. Collimator design was studied as follows. A desired object resolution was specified for a pixellated detector with a given crystal size and intrinsic spatial resolution and for a given object-to- collimator distance. Using analytic formulas, pinhole and parallel hole collimator parameters were calculated that satisfy this object resolution with optimal geometric sensitivity. Analyses were performed for 15 cm x 20 cm field of view detectors with crystal elements 1.0, 2.0 and 3.0 mm on a side and 140 keV incident photons. The sensitivity for a given object resolution was greater for pinhole collimation at smaller distances, as expected. The object distance at which the pinhole and parallel hole sensitivity curves cross each other is important. The crossover distances increased with larger crystal size for a constant object resolution and increased as the desired object resolution decreases for a constant crystal size. For example, for 4 mm object resolution and a pinhole collimator with focal length 13 cm, these distances were 5.5 cm, 6.5 cm and 8 cm for the 1 mm, 2 mm and 3 mm crystal detectors, respectively. The results suggest a strategy of parallel hole collimation for whole breast imaging and pinhole collimation for imaging focal uptake. This could be accomplished with a dual detector system with a different collimator type on each head or a single head system equipped with two collimators and a rapid switching mechanism.

  14. High rate particle tracking and ultra-fast timing with a thin hybrid silicon pixel detector

    NASA Astrophysics Data System (ADS)

    Fiorini, M.; Aglieri Rinella, G.; Carassiti, V.; Ceccucci, A.; Cortina Gil, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Perktold, L.; Petagna, P.; Petrucci, F.; Poltorak, K.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

    2013-08-01

    The Gigatracker (GTK) is a hybrid silicon pixel detector designed for the NA62 experiment at CERN. The beam spectrometer, made of three GTK stations, has to sustain high and non-uniform particle rate (∼ 1 GHz in total) and measure momentum and angles of each beam track with a combined time resolution of 150 ps. In order to reduce multiple scattering and hadronic interactions of beam particles, the material budget of a single GTK station has been fixed to 0.5% X0. The expected fluence for 100 days of running is 2 ×1014 1 MeV neq /cm2, comparable to the one foreseen in the inner trackers of LHC detectors during 10 years of operation. To comply with these requirements, an efficient and very low-mass (< 0.15 %X0) cooling system is being constructed, using a novel microchannel cooling silicon plate. Two complementary read-out architectures have been produced as small-scale prototypes: one is based on a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other makes use of a constant-fraction discriminator followed by an on-pixel TDC. The read-out ASICs are produced in 130 nm IBM CMOS technology and will be thinned down to 100 μm or less. An overview of the Gigatracker detector system will be presented. Experimental results from laboratory and beam tests of prototype bump-bonded assemblies will be described as well. These results show a time resolution of about 170 ps for single hits from minimum ionizing particles, using 200 μm thick silicon sensors.

  15. Development of an Indium bump bond process for silicon pixel detectors at PSI

    NASA Astrophysics Data System (ADS)

    Broennimann, Ch.; Glaus, F.; Gobrecht, J.; Heising, S.; Horisberger, M.; Horisberger, R.; Kästli, H. C.; Lehmann, J.; Rohe, T.; Streuli, S.

    2006-09-01

    The hybrid pixel detectors used in the high-energy physics experiments currently under construction use a vertical connection technique, the so-called bump bonding. As the pitch below 100 μm, required in these applications, cannot be fulfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflowed indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflowed afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self-alignment and obtaining high mechanical strength. For the placement of the chips a manual and an automatic machine were constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatization and is therefore much more suited for producing hundreds of modules with a well-defined geometry. The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) has started in early 2006.

  16. Performance of multi-pixel photon counters for the T2K near detectors

    NASA Astrophysics Data System (ADS)

    Yokoyama, M.; Minamino, A.; Gomi, S.; Ieki, K.; Nagai, N.; Nakaya, T.; Nitta, K.; Orme, D.; Otani, M.; Murakami, T.; Nakadaira, T.; Tanaka, M.

    2010-10-01

    We have developed a Multi-Pixel Photon Counter (MPPC) for the neutrino detectors of T2K experiment. About 64,000 MPPCs have been produced and tested in about a year. In order to characterize a large number of MPPCs, we have developed a system that simultaneously measures 64 MPPCs with various bias voltage and temperature. The performance of MPPCs are found to satisfy the requirement of T2K experiment. In this paper, we present the performance of 17,686 MPPCs measured at Kyoto University.

  17. Assembly and test of the gas pixel detector for X-ray polarimetry

    NASA Astrophysics Data System (ADS)

    Li, H.; Feng, H.; Muleri, F.; Bellazzini, R.; Minuti, M.; Soffitta, P.; Brez, A.; Spandre, G.; Pinchera, M.; Sgró, C.; Baldini, L.; She, R.; Costa, E.

    2015-12-01

    The gas pixel detector (GPD) dedicated for photoelectric X-ray polarimetry is selected as the focal plane detector for the ESA medium-class mission concept X-ray Imaging and Polarimetry Explorer (XIPE). Here we show the design, assembly, and preliminary test results of a small GPD for the purpose of gas mixture optimization needed for the phase A study of XIPE. The detector is assembled in house at Tsinghua University following a design by the INFN-Pisa group. The improved detector design results in a good uniformity for the electric field. Filled with pure dimethyl ether (DME) at 0.8 atm, the measured energy resolution is 18% at 6 keV and inversely scales with the square root of the X-ray energy. The measured modulation factor is well consistent with that from simulation, up to ~0.6 above 6 keV. The residual modulation is found to be 0.30 ± 0.15 % at 6 keV for the whole sensitive area, which can be translated into a systematic error of less than 1% for polarization measurement at a confidence level of 99%. The position resolution of the detector is about 80 μm in FWHM, consistent with previous studies and sufficient for XIPE requirements.

  18. Direct tests of a pixelated microchannel plate as the active element of a shower maximum detector

    NASA Astrophysics Data System (ADS)

    Apresyan, A.; Los, S.; Pena, C.; Presutti, F.; Ronzhin, A.; Spiropulu, M.; Xie, S.

    2016-08-01

    One possibility to make a fast and radiation resistant shower maximum detector is to use a secondary emitter as an active element. We report our studies of microchannel plate photomultipliers (MCPs) as the active element of a shower-maximum detector. We present test beam results obtained using Photonis XP85011 to detect secondary particles of an electromagnetic shower. We focus on the use of the multiple pixels on the Photonis MCP in order to find a transverse two-dimensional shower distribution. A spatial resolution of 0.8 mm was obtained with an 8 GeV electron beam. A method for measuring the arrival time resolution for electromagnetic showers is presented, and we show that time resolution better than 40 ps can be achieved.

  19. On the Gas Optimization and Systematic Error for the Gas Pixel Detector

    NASA Astrophysics Data System (ADS)

    Feng, Hua; Costa, Enrico; Muleri, Fabio; Bellazzini, Ronaldo; Soffitta, Paolo; Zhang, Heng; Li, Hong

    2016-07-01

    The gas pixel detector (GPD) is selected as the focal plane polarimeter for the X-ray Imaging Polarimetry Explorer (XIPE). We calculated the detection efficiency of different gas mixtures, simulated the electron tracks and degree of modulation at different X-ray energies using packages like Geant4/Maxwell/Garfield. The simulated results are tested to be consistent with measurements. We will demonstrate how the choice of gas mixture influences the sensitivity in polarization. We will also show test results of the systematic error, which is the response of detector to unpolarized signals and determines the limiting sensitivity. Our measurements indicate that systematic error is well below 1% in degree of polarization for GPD.

  20. Direct tests of a pixelated microchannel plate as the active element of a shower maximum detector

    DOE PAGES

    Apresyan, A.; Los, S.; Pena, C.; Presutti, F.; Ronzhin, A.; Spiropulu, M.; Xie, S.

    2016-05-07

    One possibility to make a fast and radiation resistant shower maximum detector is to use a secondary emitter as an active element. We report our studies of microchannel plate photomultipliers (MCPs) as the active element of a shower-maximum detector. We present test beam results obtained using Photonis XP85011 to detect secondary particles of an electromagnetic shower. We focus on the use of the multiple pixels on the Photonis MCP in order to find a transverse two-dimensional shower distribution. A spatial resolution of 0.8 mm was obtained with an 8 GeV electron beam. As a result, a method for measuring themore » arrival time resolution for electromagnetic showers is presented, and we show that time resolution better than 40 ps can be achieved.« less

  1. Deployment of the CMS Tracker AMC as backend for the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Auzinger, G.

    2016-01-01

    The silicon pixel detector of the CMS experiment at CERN will be replaced with an upgraded version at the beginning of 2017 with the new detector featuring an additional barrel- and end-cap layer resulting in an increased number of fully digital read-out links running at 400 Mbps. New versions of the PSI46 Read-Out Chip and Token Bit Manager have been developed to operate at higher rates and reduce data loss. Front-End Controller and Front-End Driver boards, based on the μTCA compatible CMS Tracker AMC, a variant of the FC7 card, are being developed using different mezzanines to host the optical links for the digital read-out and control system. An overview of the system architecture is presented, with details on the implementation, and first results obtained from test systems.

  2. Scatter-free breast imaging using a monochromator coupled to a pixellated spectroscopic detector

    NASA Astrophysics Data System (ADS)

    Green, F. H.; Veale, M. C.; Wilson, M. D.; Seller, P.; Scuffham, J.; Pani, S.

    2015-03-01

    This project uses the combination of a spectroscopic detector and a monochromator to produce scatter free images for use in mammography. Reducing scatter is vital in mammography, where typical structures have either low contrast or small dimensions. The typical method to reduce scatter is the anti-scatter grid, which has the drawback of absorbing a fraction of the primary beam as well as scattered radiation. An increase in the dose is then required in order to compensate. Compton-scattered X-rays have lower energy than the primary beam. When using a monochromatic beam and a spectroscopic detector the scattered beam will appear at lower energies than the primary beam in the detected spectrum. Therefore if the spectrum of the detected X-rays is available, the scattered component can be windowed out of the spectrum, essentially producing a scatter free image. The monochromator used in this study is made from a Highly Orientated Pyrolytic Graphite (HOPG) crystal with a mosaic spread of 0.4°+/-0.1°. The detector is a pixellated spectroscopic detector that is made from a 2 cm x 2 cm x 0.1 cm CdTe crystal with a pixel pitch of 250 μm and an energy resolution of 0.8 keV at 59.5 keV. This work presents the characterisation of the monochromator and initial imaging data. The work shows a contrast increase of 20% with the removal of the low energy Compton scattered X-rays.

  3. Coded aperture imaging with a HURA coded aperture and a discrete pixel detector

    NASA Astrophysics Data System (ADS)

    Byard, Kevin

    An investigation into the gamma ray imaging properties of a hexagonal uniformly redundant array (HURA) coded aperture and a detector consisting of discrete pixels constituted the major research effort. Such a system offers distinct advantages for the development of advanced gamma ray astronomical telescopes in terms of the provision of high quality sky images in conjunction with an imager plane which has the capacity to reject background noise efficiently. Much of the research was performed as part of the European Space Agency (ESA) sponsored study into a prospective space astronomy mission, GRASP. The effort involved both computer simulations and a series of laboratory test images. A detailed analysis of the system point spread function (SPSF) of imaging planes which incorporate discrete pixel arrays is presented and the imaging quality quantified in terms of the signal to noise ratio (SNR). Computer simulations of weak point sources in the presence of detector background noise were also investigated. Theories developed during the study were evaluated by a series of experimental measurements with a Co-57 gamma ray point source, an Anger camera detector, and a rotating HURA mask. These tests were complemented by computer simulations designed to reproduce, as close as possible, the experimental conditions. The 60 degree antisymmetry property of HURA's was also employed to remove noise due to detector systematic effects present in the experimental images, and rendered a more realistic comparison of the laboratory tests with the computer simulations. Plateau removal and weighted deconvolution techniques were also investigated as methods for the reduction of the coding error noise associated with the gamma ray images.

  4. Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology

    NASA Astrophysics Data System (ADS)

    Kishishita, T.; Hemperek, T.; Rymaszewski, P.; Hirono, T.; Krüger, H.; Wermes, N.

    2016-07-01

    We present the recent development of DMAPS (Depleted Monolithic Active Pixel Sensor), implemented with a Toshiba 130 nm CMOS process. Unlike in the case of standard MAPS technologies which are based on an epi-layer, this process provides a high-resistive substrate that enables larger signal and faster charge collection by drift in a 50 - 300 μm thick depleted layer. Since this process also enables the use of deep n-wells to isolate the collection electrodes from the thin active device layer, NMOS and PMOS transistors are available for the readout electronics in each pixel cell. In order to characterize the technology, we implemented a simple three transistor readout with a variety of pixel pitches and input FET sizes. This layout variety gives us a clue on sensor characteristics for future optimization, such as the input detector capacitance or leakage current. In the initial measurement, the radiation spectra were obtained from 55Fe with an energy resolution of 770 eV (FWHM) and 90Sr with the MVP of 4165 e-.

  5. SemiSPECT: A Small-animal Imaging System Based on Eight CdZnTe Pixel Detectors

    PubMed Central

    Peterson, Todd E.; Kim, Hyunki; Crawford, Michael J.; Gershman, Benjamin M.; Hunter, William C.J.; Barber, H. Bradford; Furenlid, Lars R.; Wilson, Donald W.; Woolfenden, James M.; Barrett, Harrison H.

    2015-01-01

    We have constructed a SPECT system for small animals that utilizes eight CdZnTe pixel detectors. The eight detectors are arranged in a single octagonal ring, where each views the object to be imaged through a single pinhole. Additional projections are obtained via rotation of the animal. Each CdZnTe detector is approximately 2 mm in thickness and is patterned on one surface into a 64×64 array of pixels with 380 micron pitch. We have designed an electronic readout system capable of collecting data from the eight detectors in listmode. In this scheme each event entry for a gamma-ray hit includes the pulse height of the pixel with the largest signal and the pulse height for each of its eight nearest neighbors. We present details of the overall design, the electronics, and system performance. PMID:26568674

  6. Multiple-image encryption scheme with a single-pixel detector

    NASA Astrophysics Data System (ADS)

    Yuan, Sheng; Liu, Xuemei; Zhou, Xin; Li, Zhongyang

    2016-08-01

    A multiple-image encryption (MIE) scheme with a single-pixel detector has been proposed according to the principle of ghost imaging. In this scheme, each of the spatially coherent laser beams is modified by a set of phase-mask keys and illuminates on a secret image. All of the transmitted lights are recorded together by a single-pixel (bucket) detector to obtain a ciphertext, but anyone of the secret images can be decrypted from the ciphertext independently without any mutually overlapped despite some noise in them. The MIE scheme will bring convenience for data storage and transmission, especially in the case that different secret images need to be distributed to different authorized users, because the ciphertext is a real-valued function and this scheme can effectively avoid the secret images being extracted mutually. The basic principle of the MIE scheme is described theoretically and verified by computer simulations. Finally, the feasibility, robustness and encryption capacity are also tested numerically.

  7. The RD50 activity in the context of future pixel detector systems

    NASA Astrophysics Data System (ADS)

    Casse, G.

    2015-05-01

    The CERN/RD50 collaboration is dedicated to the radiation hardening of semiconductor sensors for future super-collider needs. The findings of this collaboration are therefore especially relevant to the pixel devices for the LHC experiment upgrades. A considerable amount of results on the enhancement of the radiation tolerance of silicon sensors has been found within RD50. The research towards radiation hardening has highlighted, and increased the knowledge on properties of sensors that are relevant to other applications. For example radiation hardening relies on the speed of signal collection in irradiated devices. As a consequence, the methods envisaged for increasing this collection speed turn out to be promising for significantly improving the performance of time resolved, high spatial resolution systems. A new type of device processing strongly emerging for production of future pixel sensor systems is the HV-CMOS technology. The RD50 research methodology provides the tools for characterising the behaviour of the deep collecting electrode (deep n-well) for this type of device after irradiation and the optimal framework for comparing the performance of the new devices with the current state of the art.

  8. Transmission detectors for cyclotron in-vivo irradiations with neutrons.

    PubMed

    Ettinger, K V; Thomas, B J; Filkin, O J

    1975-01-01

    The neutron fluence imparted to the irradiated subjects needs to be measured accurately in order to obtain meaningful results from diagnostic irradiations. A convenient neutron detector for this purpose is in the form of a transmission chamber, which covers the whole beam directed at the subject. In one design the detector is an ionization chamber, filled with propane gas, in another a thin sheet of plastic scintillator is coupled to a pair of photomultipliers.

  9. Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

    NASA Astrophysics Data System (ADS)

    Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

    2013-01-01

    Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

  10. DETECTORS AND EXPERIMENTAL METHODS: Study of the characteristics of a scintillation array and single pixels for nuclear medicine imaging applications

    NASA Astrophysics Data System (ADS)

    Zhu, Jie; Ma, Hong-Guang; Ma, Wen-Yan; Zeng, Hui; Wang, Zhao-Min; Xu, Zi-Zong

    2009-04-01

    By using a pixelized Nal(Tl) crystal array coupled to a R2486 PSPMT, the characteristics of the array and of a single pixel, such as the light output, energy resolution, peak-to-valley ratio (P/V) and imaging performance of the detector were studied. The pixel size of the NaI(TI) scintillation pixel array is 2 mm×2 mm×5 mm. There are in total 484 pixels in a 22 × 22 matrix. In the pixel spectrum an average peak-to-valley ratio (P/V) of 16 was obtained. In the image of all the pixels, good values for the Peak-to-Valley ratios could be achieved, namely a mean of 17, a maximum of 45 and the average peak FWHM (the average value of intrinsic spatial resolution) of 2.3 mm. However, the PSPMT non-uniform response and the scintillation pixels array inhomogeneities degrade the imaging performance of the detector.

  11. Design Studies of a CZT-based Detector Combined with a Pixel-Geometry-Matching Collimator for SPECT Imaging

    PubMed Central

    Weng, Fenghua; Bagchi, Srijeeta; Huang, Qiu; Seo, Youngho

    2014-01-01

    Single Photon Emission Computed Tomography (SPECT) suffers limited efficiency due to the need for collimators. Collimator properties largely decide the data statistics and image quality. Various materials and configurations of collimators have been investigated in many years. The main thrust of our study is to evaluate the design of pixel-geometry-matching collimators to investigate their potential performances using Geant4 Monte Carlo simulations. Here, a pixel-geometry-matching collimator is defined as a collimator which is divided into the same number of pixels as the detector’s and the center of each pixel in the collimator is a one-to-one correspondence to that in the detector. The detector is made of Cadmium Zinc Telluride (CZT), which is one of the most promising materials for applications to detect hard X-rays and γ-rays due to its ability to obtain good energy resolution and high light output at room temperature. For our current project, we have designed a large-area, CZT-based gamma camera (20.192 cm×20.192 cm) with a small pixel pitch (1.60 mm). The detector is pixelated and hence the intrinsic resolution can be as small as the size of the pixel. Materials of collimator, collimator hole geometry, detection efficiency, and spatial resolution of the CZT detector combined with the pixel-matching collimator were calculated and analyzed under different conditions. From the simulation studies, we found that such a camera using rectangular holes has promising imaging characteristics in terms of spatial resolution, detection efficiency, and energy resolution. PMID:25378898

  12. Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons

    SciTech Connect

    Kozorezov, A.G.; Wigmore, J.K.; Owens, A.; Hartog, R. den; Peacock, A.

    2005-04-01

    We report the development of a general analytic method for describing the responsivity and resolution for a pixellated semiconductor detector structure in terms of device and material properties. The method allows both drift and diffusive transport to be modelled, for which previously only Monte Carlo techniques have been available. We obtain a general solution, and show specific results for an array of square pixels, illustrating the device constraints required to optimize spatial and spectral resolution.

  13. CZT pixel detectors equipped with effective Ohmic contacts; their spectroscopic performance and the enigma of why they thus behave

    NASA Astrophysics Data System (ADS)

    El-Hanany, Uri; Shahar, Allon; Tsigelman, A.

    1999-10-01

    The performance of CZT pixel detectors, with dedicated ICs and electronic processors, have been demonstrated. These nuclear imaging modules, developed primarily for the medical market, may be utilized for other applications, such as large area nuclear spectrometers. An improved crystal growth technique ensures a practical supply of wafers of which high performance detectors are fabricated. We believe that the high spectroscopic quality of these detectors stems from their effective Ohmic behavior, coupled with the geometrical, 'small pixel' effect. The Ohmic operation of these detectors has been described in a schematic way only, where the detailed non-equilibrium mechanism, responsible for it, still remains to be explained in detail. The IMARAD detector type 2, with contacts which strongly limit the dark current, exhibit even improved spectroscopic behavior, due to a dynamic Ohmic behavior of these contacts.

  14. Detailed Studies of Pixelated CZT Detectors Grown with the Modified Horizontal Bridgman Method

    NASA Technical Reports Server (NTRS)

    Jung, I.; Krawczynski, H.; Burger, A.; Guo, M.; Groza, M.

    2007-01-01

    The detector material Cadmium Zinc Telluride (CZT) achieves excellent spatial resolution and good energy resolution over a broad energy range, several keV up to some MeV. Presently, there are two main methods to grow CZT crystals, the Modified High-Pressure Bridgman (MHB) and the High-Pressure Bridgman (HPB) process. The study presented in this paper is based on MHB CZT substrates from the company Orbotech Medical Solutions Ltd. [Orbotech Medical Solutions Ltd., 10 Plaut St., Park Rabin, P.O. Box 2489, Rehovot, Israel, 76124]. Former studies have shown that high-work-function materials on the cathode side reduce the leakage current and, therefore, improve the energy resolution at lower energies. None of the studies have emphasized on the anode contact material. Therefore, we present in this paper the result of a detailed study in which for the first time the cathode material was kept constant and the anode material was varied. We used four different anode materials: Indium, Titanium, Chromium and Gold, metals with work-functions between 4.1 eV and 5.1 eV. The detector size was 2.0 x 2.0 x 0.5 cu cm with 8 x 8 pixels and a pitch of 2.46 mm. The best performance was achieved with the low-work-function materials Indium and Titanium with energy resolutions of 2.0 keV (at 59 keV) and 1.9 keV (at 122 keV) for Titanium and 2.1 keV (at 59 keV) and 2.9 keV (at 122 keV) for Indium. Taking into account the large pixel pitch of 2.46 mm, these resolutions are very competitive in comparison to those achieved with detectors made of material produced with the more expensive conventional HPB method. We present a detailed comparison of our detector response with 3D simulations. The latter comparisons allow us to determine the mobility-lifetime-products (mu tau-products) for electrons and holes. Finally, we evaluated the temperature dependency of the detector performance and ls-products. For many applications temperature dependence is important, therefore, we extended the scope of

  15. A low-noise wide-dynamic-range UV detector with pixel-level A/D conversion

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Bao, Xichang; Wang, Ling; Li, Chao; Yuan, Yonggang; Li, Xiangyang

    2009-07-01

    This paper presents a low-power low-noise wide-dynamic-range GaN-based UV detector with pixel-level A/D conversion. The detector comprised an array of 50×50μm2 pixels with a multi-channel bit serial (MCBS) ADC in each pixel. Each pixel contains a UV photo-detector, a 1-bit comparator and a 3-T memory cell. The A/D conversion is performed simultaneously for all pixels. The digital data is read out from the pixel array in manner of a random access digital memory. Since there are many ADCs operating simultaneously, power consumption for each ADC must be minimized. To satisfy the low power consumption, A power-down circuit is introduced in. The minimal value for ADC resolution and the frame rate are 10bits and 100f/s respectively. A high GBW comparator is designed to satisfy this demand. In order to suppress the FPN and 1/f noise a digital correlated double sampling (CDS) is adopted in this application.

  16. Imaging of Ra-223 with a small-pixel CdTe detector

    NASA Astrophysics Data System (ADS)

    Scuffham, J. W.; Pani, S.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.; Cernik, R. J.

    2015-01-01

    Ra-223 Dichloride (Xofigo™) is a promising new radiopharmaceutical offering survival benefit and palliation of painful bone metastases in patients with hormone-refractory prostate cancer [1]. The response to radionuclide therapy and toxicity are directly linked to the absorbed radiation doses to the tumour and organs at risk respectively. Accurate dosimetry necessitates quantitative imaging of the biodistribution and kinetics of the radiopharmaceutical. Although primarily an alpha-emitter, Ra-223 also has some low-abundance X-ray and gamma emissions, which enable imaging of the biodistribution in the patient. However, the low spectral resolution of conventional gamma camera detectors makes in-vivo imaging of Ra-223 challenging. In this work, we present spectra and image data of anthropomorphic phantoms containing Ra-223 acquired with a small-pixel CdTe detector (HEXITEC) [2] with a pinhole collimator. Comparison is made with similar data acquired using a clinical gamma camera. The results demonstrate the advantages of the solid state detector in terms of scatter rejection and quantitative accuracy of the images. However, optimised collimation is needed in order for the sensitivity to rival current clinical systems. As different dosage levels and administration regimens for this drug are explored in current clinical trials, there is a clear need to develop improved imaging technologies that will enable personalised treatments to be designed for patients.

  17. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-01-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μW. In acquisition mode, the total power consumption of every pixel is 200 μW. An equivalent noise charge (ENC) of 160 e−RMS at maximum gain and negative polarity conditions has been measured at room temperature. PMID:26744545

  18. GaAs detectors irradiated by low doses of electrons

    NASA Astrophysics Data System (ADS)

    Šagátová, A.; Zat'ko, B.; Pavlovič, M.; Sedlačková, K.; Hybler, P.; Dubecký, F.; Nečas, V.

    2014-04-01

    Semi-insulating (SI) GaAs detectors were irradiated by 5 MeV electrons up to a dose of 69 kGy, in order to test their radiation hardness. The electric and spectrometric stability of detectors was examined as a function of the absorbed dose. Investigated detectors showed a very good detector radiation resistance within a dose up to 40 kGy followed by deterioration of some spectrometric and electric properties. However, the reverse current and the detector charge collection efficiency showed minimum changes with the overall applied doses. The obtained results will be used as a preliminary study for further radiation-hardness investigations of GaAs detectors against high energy electrons. This will complete our previous studies of GaAs detector radiation hardness against fast neutrons and γ-rays.

  19. Coded aperture detector: an image sensor with sub 20-nm pixel resolution.

    PubMed

    Miyakawa, Ryan; Mayer, Rafael; Wojdyla, Antoine; Vannier, Nicolas; Lesser, Ian; Aron-Dine, Shifrah; Naulleau, Patrick

    2014-08-11

    We describe the coded aperture detector, a novel image sensor based on uniformly redundant arrays (URAs) with customizable pixel size, resolution, and operating photon energy regime. In this sensor, a coded aperture is scanned laterally at the image plane of an optical system, and the transmitted intensity is measured by a photodiode. The image intensity is then digitally reconstructed using a simple convolution. We present results from a proof-of-principle optical prototype, demonstrating high-fidelity image sensing comparable to a CCD. A 20-nm half-pitch URA fabricated by the Center for X-ray Optics (CXRO) nano-fabrication laboratory is presented that is suitable for high-resolution image sensing at EUV and soft X-ray wavelengths. PMID:25321062

  20. 4D STEM: High efficiency phase contrast imaging using a fast pixelated detector

    NASA Astrophysics Data System (ADS)

    Yang, H.; Jones, L.; Ryll, H.; Simson, M.; Soltau, H.; Kondo, Y.; Sagawa, R.; Banba, H.; MacLaren, I.; Nellist, P. D.

    2015-10-01

    Phase contrast imaging is widely used for imaging beam sensitive and weak phase objects in electron microscopy. In this work we demonstrate the achievement of high efficient phase contrast imaging in STEM using the pnCCD, a fast direct electron pixelated detector, which records the diffraction patterns at every probe position with a speed of 1000 to 4000 frames per second, forming a 4D STEM dataset simultaneously with the incoherent Z-contrast imaging. Ptychographic phase reconstruction has been applied and the obtained complex transmission function reveals the phase of the specimen. The results using GaN and Ti, Nd- doped BiFeO3 show that this imaging mode is especially powerful for imaging light elements in the presence of much heavier elements.

  1. Reduction of ring artifacts in CBCT: Detection and correction of pixel gain variations in flat panel detectors

    SciTech Connect

    Altunbas, Cem; Lai, Chao-Jen; Zhong, Yuncheng; Shaw, Chris C.

    2014-09-15

    Purpose: In using flat panel detectors (FPD) for cone beam computed tomography (CBCT), pixel gain variations may lead to structured nonuniformities in projections and ring artifacts in CBCT images. Such gain variations can be caused by change in detector entrance exposure levels or beam hardening, and they are not accounted by conventional flat field correction methods. In this work, the authors presented a method to identify isolated pixel clusters that exhibit gain variations and proposed a pixel gain correction (PGC) method to suppress both beam hardening and exposure level dependent gain variations. Methods: To modulate both beam spectrum and entrance exposure, flood field FPD projections were acquired using beam filters with varying thicknesses. “Ideal” pixel values were estimated by performing polynomial fits in both raw and flat field corrected projections. Residuals were calculated by taking the difference between measured and ideal pixel values to identify clustered image and FPD artifacts in flat field corrected and raw images, respectively. To correct clustered image artifacts, the ratio of ideal to measured pixel values in filtered images were utilized as pixel-specific gain correction factors, referred as PGC method, and they were tabulated as a function of pixel value in a look-up table. Results: 0.035% of detector pixels lead to clustered image artifacts in flat field corrected projections, where 80% of these pixels were traced back and linked to artifacts in the FPD. The performance of PGC method was tested in variety of imaging conditions and phantoms. The PGC method reduced clustered image artifacts and fixed pattern noise in projections, and ring artifacts in CBCT images. Conclusions: Clustered projection image artifacts that lead to ring artifacts in CBCT can be better identified with our artifact detection approach. When compared to the conventional flat field correction method, the proposed PGC method enables characterization of nonlinear

  2. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    NASA Astrophysics Data System (ADS)

    Zhao, C.; Konstantinidis, A. C.; Zheng, Y.; Anaxagoras, T.; Speller, R. D.; Kanicki, J.

    2015-12-01

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm-1 and a DQE of around 0.5 at spatial frequencies  <1 mm-1. In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (~1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

  3. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

    PubMed

    Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

    2015-12-01

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  <1 mm(-1). In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (~1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered. PMID:26540090

  4. Pixel detector Timepix operated in pile-up mode for pulsed imaging with ultra-soft X-rays

    NASA Astrophysics Data System (ADS)

    Krejci, F.; Jakubek, J.; Kroupa, M.; Bruza, P.; Panek, D.

    2012-12-01

    The hybrid semiconductor pixel detector Timepix operated in the Time-over-Threshold mode (ToT) enables direct energy measurement in each pixel. The advantage of noiseless position sensitive detection combined with per pixel spectroscopic capability opens the way to numerous new applications, which were till now, however, restricted to detection of radiation which is basically above the detector energy threshold (typically 3-4 keV). This limitation excludes application of the hybrid pixel technology to highly interesting fields such as plasma diagnostics or X-ray microscopy. In this contribution we demonstrate how the Timepix detector working in ToT mode can be operated as a detector for particles which are in principle below the detector threshold, namely for soft X-ray photons with energy typically 0.5 keV. The approach is based on the detection of a larger number of photons incoming in the pixel signal processing chain in a time significantly shorter than the shaping time of the pixel electronics, i.e. forming signal pile-up. The proposed approach enables a CCD-like integrating operation with the many advantages of the hybrid counting technology (direct conversion, high sensitivity, dark-current free, room temperature operation, fully digital output and possibility to utilize various read-out architectures). Using the proposed approach we performed single-shot X-ray radiography with a laser-induced plasma source in the spectral region of water window. The same technique was used for the characterization of the source itself.

  5. A vertically integrated pixel readout device for the Vertex Detector at the International Linear Collider

    SciTech Connect

    Deptuch, Grzegorz; Christian, David; Hoff, James; Lipton, Ronald; Shenai, Alpana; Trimpl, Marcel; Yarema, Raymond; Zimmerman, Tom; /Fermilab

    2008-12-01

    3D-Integrated Circuit technology enables higher densities of electronic circuitry per unit area without the use of nanoscale processes. It is advantageous for mixed mode design with precise analog circuitry because processes with conservative feature sizes typically present lower process dispersions and tolerate higher power supply voltages, resulting in larger separation of a signal from the noise floor. Heterogeneous wafers (different foundries or different process families) may be combined with some 3D integration methods, leading to the optimization of each tier in the 3D stack. Tracking and vertexing in future High-Energy Physics (HEP) experiments involves construction of detectors composed of up to a few billions of channels. Readout electronics must record the position and time of each measurement with the highest achievable precision. This paper reviews a prototype of the first 3D readout chip for HEP, designed for a vertex detector at the International Linear Collider. The prototype features 20 x 20 {micro}m{sup 2} pixels, laid out in an array of 64 x 64 elements and was fabricated in a 3-tier 0.18 {micro}m Fully Depleted SOI CMOS process at MIT-Lincoln Laboratory. The tests showed correct functional operation of the structure. The chip performs a zero-suppressed readout. Successive submissions are planned in a commercial 3D bulk 0.13 {micro}m CMOS process to overcome some of the disadvantages of an FDSOI process.

  6. Development of a novel high-rate gaseous pixel detector for time-resolved x-ray diffraction applications

    NASA Astrophysics Data System (ADS)

    Sarvestani, Amir; Besch, Hans-Juergen; Menk, Ralf-Hendrik; Pavel, Nicolaie A.; Walenta, Albert H.

    1999-10-01

    Modern X-ray diffraction applications demand for imaging detectors with large pixel number, high intensity precision, high rate capability and dead time free operation. Detailed studies with a simulation program, which has been developed to investigate the performance of different detector types, show that a large area gaseous single photon counter is very well suited to meet the aforementioned requirements. The prototype detector, which has been built according to the specification profile from the simulations, belongs to a new generation of gaseous detectors using novel technologies for both gas amplification (using a MicroCAT) and position encoding (using 2D resistive charge division). This local interpolation method combines the advantages of a pure pixel read-out (high local and global rate capability) with those of a projecting read-out (small number of channels). The current prototype system has an active area of 28 X 28 mm2 with effectively 140 X 140 pixels. Various test measurements at synchrotron light sources with biological samples have been performed demonstrating the good spatial resolution (around 300 micrometers FWHM), the high intensity precision (only Poisson limited) and the high rate capability (exceeding 1 MHz spot rate). Moreover, time resolved measurements in the microsecond domain have been performed, and fine angular slicing has been applied to protein crystallography experiments. The detector has a high reliability and robustness, particularly when compared to conventional gaseous detectors, and the extension of the technology used to larger active areas is feasible.

  7. Similarities and differences of recent hybrid pixel detectors for X-ray and high energy physics developed at the Paul Scherrer Institut

    NASA Astrophysics Data System (ADS)

    Tinti, G.; Bergamaschi, A.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Horisberger, R.; Johnson, I.; Jungmann-Smith, J. H.; Mezza, D.; Mozzanica, A.; Schmitt, B.; Shi, X.

    2015-04-01

    Hybrid pixel detectors are being developed for both photon science and high energy physics. The article will cover similarities and differences in pixel detectors for both applications using two of the pixel detectors developed at the Paul Scherrer Institute (Switzerland) as examples: the EIGER photon counting detector and the psi46dig chip, which has been developed for the Compact Muon Solenoid (CMS) tracking pixel detector upgrade. EIGER is a single photon counting hybrid pixel detector for applications at synchrotron light sources in the energy range from a few to 25 keV. It is characterized by a small pixel size (75 × 75 μm2), high count rate capability (106 counts/pixel/s) and very high data rate, which reaches 6 Gb/s for a 256 × 256 pixel chip. The CMS pixel detector is designed to provide charge information from the pixels in the harsh radiation environment at the Large Hadron Collider. The short time between bunches of 25 ns and the high event rate at luminosity up to 2 × 1034cm-2s-1 require a detector with high hit efficiency, with good timing resolution and the ability to retain timestamp information for the hits. The readout architecture is based on the transfer of hits from the pixels to the periphery, where the trigger validation is performed before data transfer. The data rates of the digitized output reach 160 Mb/s for a 52×80 pixel chip.The specific timing and rate requirements for the detectors, the analog performances (minimum threshold and noise), the power consumption and the radiation hardness will be compared. An overview on future developments based on mutual learning and common solutions will be discussed.

  8. Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging

    PubMed Central

    Muir, Ryan D.; Pogranichney, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

    2014-01-01

    Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment. PMID:25178010

  9. HEPS-BPIX, a single photon counting pixel detector with a high frame rate for the HEPS project

    NASA Astrophysics Data System (ADS)

    Wei, Wei; Zhang, Jie; Ning, Zhe; Lu, Yunpeng; Fan, Lei; Li, Huaishen; Jiang, Xiaoshan; Lan, Allan K.; Ouyang, Qun; Wang, Zheng; Zhu, Kejun; Chen, Yuanbo; Liu, Peng

    2016-11-01

    China's next generation light source, named the High Energy Photon Source (HEPS), is currently under construction. HEPS-BPIX (HEPS-Beijing PIXel) is a dedicated pixel readout chip that operates in single photon counting mode for X-ray applications in HEPS. Designed using CMOS 0.13 μm technology, the chip contains a matrix of 104×72 pixels. Each pixel measures 150 μm×150 μm and has a counting depth of 20 bits. A bump-bonded prototyping detector module with a 300-μm thick silicon sensor was tested in the beamline of Beijing Synchrotron Radiation Facility. A fast stream of X-ray images was demonstrated, and a frame rate of 1.2 kHz was proven, with a negligible dead time. The test results showed an equivalent noise charge of 115 e- rms after bump bonding and a threshold dispersion of 55 e- rms after calibration.

  10. The Cryogenic AntiCoincidence detector for ATHENA: the progress towards the final pixel design

    NASA Astrophysics Data System (ADS)

    Macculi, Claudio; Piro, Luigi; Cea, Donatella; Colasanti, Luca; Lotti, Simone; Natalucci, Lorenzo; Gatti, Flavio; Bagliani, Daniela; Biasotti, Michele; Corsini, Dario; Pizzigoni, Giulio; Torrioli, Guido; Barbera, Marco; Mineo, Teresa; Perinati, Emanuele

    2014-07-01

    "The Hot and Energetic Universe" is the scientific theme approved by the ESA SPC for a Large mission to be flown in the next ESA slot (2028th) timeframe. ATHENA is a space mission proposal tailored on this scientific theme. It will be the first X-ray mission able to perform the so-called "Integral field spectroscopy", by coupling a high-resolution spectrometer, the X-ray Integral Field Unit (X-IFU), to a high performance optics so providing detailed images of its field of view (5' in diameter) with an angular resolution of 5" and fine energy-spectra (2.5eV@E<7keV). The X-IFU is a kilo-pixel array based on TES (Transition Edge Sensor) microcalorimeters providing high resolution spectroscopy in the 0.2-12 keV range. Some goals is the detection of faint and diffuse sources as Warm Hot Intergalactic Medium (WHIM) or galaxies outskirts. To reach its challenging scientific aims, it is necessary to shield efficiently the X-IFU instrument against background induced by external particles: the goal is 0.005 cts/cm^2/s/keV. This scientific requirement can be met by using an active Cryogenic AntiCoincidence (CryoAC) detector placed very close to X-IFU (~ 1 mm below). This is shown by our GEANT4 simulation of the expected background at L2 orbit. The CryoAC is a TES based detector as the X-IFU sharing with it thermal and mechanical interfaces, so increasing the Technology Readiness Level (TRL) of the payload. It is a 2x2 array of microcalorimeter detectors made by Silicon absorber (each of about 80 mm^2 and 300 μm thick) and sensed by an Ir TES. This choice shows that it is possible to operate such a detector in the so-called athermal regime which gives a response faster than the X-IFU (< 30 μs), and low energy threshold (above few keV). Our consortium has developed and tested several samples, some of these also featured by the presence of Al-fins to efficiently collect the athermal phonons, and increased x-ray absorber area (up to 1 cm^2). Here the results of deep test

  11. Digital performance improvements of a CdTe pixel detector for high flux energy-resolved X-ray imaging

    NASA Astrophysics Data System (ADS)

    Abbene, L.; Gerardi, G.; Principato, F.

    2015-03-01

    Photon counting detectors with energy resolving capabilities are desired for high flux X-ray imaging. In this work, we present the performance of a pixelated Schottky Al/p-CdTe/Pt detector (4×4) coupled to a custom-designed digital readout electronics for high flux measurements. The detector (4×4×2 mm3) has an anode layout based on an array of 16 pixels with a geometric pitch of 1 mm (pixel size of 0.6 mm). The 4-channel readout electronics is able to continuously digitize and process the signals from each pixel, performing multi-parameter analysis (event arrival time, pulse shape, pulse height, pulse time width, etc.) even at high fluxes and at different throughput and energy resolution conditions. The spectroscopic response of the system to monochromatic X-ray sources, at both low and high rates, is presented with particular attention to the mitigation of some typical spectral distortions (pile-up, baseline shifts and charge sharing). At a photon counting rate of 520 kcps/pixel, the system exhibits an energy resolution (FWHM at 59.5 keV) of 4.6%, 7.1% and 9% at throughputs of 0.9%, 16% and 82%, respectively. Measurements of Ag-target X-ray spectra also show the ability of the system to perform accurate estimation of the input counting rate up to 1.1 Mcps/pixel. The aim of this work is to point out, beside the appealing properties of CdTe detectors, the benefits of the digital approach in the development of high-performance energy resolved photon counting (ERPC) systems for high flux X-ray imaging.

  12. First test results from a high-resolution CdZnTe pixel detector with VLSI readout

    NASA Astrophysics Data System (ADS)

    Cook, Walter R.; Boggs, Steven E.; Bolotnikov, Aleksey E.; Burnham, Jill A.; Harrison, Fiona A.; Kecman, Branislav; Matthews, Brian; Schindler, Steven M.; Fitzsimmons, Michael

    1999-10-01

    We are developing a CdZnTe pixel detector with a custom low- noise analog VLSI readout for use in the High-Energy Focusing Telescope balloon experiment, as well as for future space astronomy applications. The goal of the program is to achieve good energy resolution (< 1 keV FWHM at 60 keV) and low threshold in a sensor with approximately 500 micrometers pixels. We have fabricated several prototype detector assemblies with 2 mm thick, 680 by 650 micrometers pitch CdZnTe pixel sensors indium bump bonded a VLSI readout chip developed at Caltech. Each readout circuit in the 8 X 8 prototype is matched to the detector pixel size, and contains a preamplifier, shaping amplifiers, and a peak stretcher/discriminator. In the first 8 X 8 prototype, we have demonstrated the low-noise preamplifier by routing the output signals off-chip for shaping and pulse-height analysis. Pulse height spectra obtained using a 241Am source, collimated to illuminate a single pixel, show excellent energy resolution of 1.1 keV FWHM for the 60 keV line at room temperature. Line profiles are approximately Gaussian and dominated by electronic noise, however a small low energy tail is evident for the 60 keV line. We obtained slightly improved resolution of 0.9 keV FWHM at 60 keV by cooling the detector to 5 degree(s)C, near the expected balloon- flight operating temperature. Pulse height spectra obtained with the collimated source positioned between pixels show the effect of signal sharing for events occurring near the boundary. We are able to model the observed spectra using a Monte-Carlo simulation that includes the effects of photon interaction, charge transport and diffusion, pixel and collimator geometry, and electronic noise. By using the model to simulate the detector response to uncollimated radiation (including the effect of finite trigger threshold for reconstruction of the total energy of multi-pixel events), we find the energy resolution to be degraded by only 10% for full

  13. NOTE: First images of a digital autoradiography system based on a Medipix2 hybrid silicon pixel detector

    NASA Astrophysics Data System (ADS)

    Mettivier, Giovanni; Montesi, Maria Cristina; Russo, Paolo

    2003-06-01

    We present the first images of beta autoradiography obtained with the high-resolution hybrid pixel detector consisting of the Medipix2 single photon counting read-out chip bump-bonded to a 300 µm thick silicon pixel detector. This room temperature system has 256 × 256 square pixels of 55 µm pitch (total sensitive area of 14 × 14 mm2), with a double threshold discriminator and a 13-bit counter in each pixel. It is read out via a dedicated electronic interface and control software, also developed in the framework of the European Medipix2 Collaboration. Digital beta autoradiograms of 14C microscale standard strips (containing separate bands of increasing specific activity in the range 0.0038-32.9 kBq g-1) indicate system linearity down to a total background noise of 1.8 × 10-3 counts mm-2 s-1. The minimum detectable activity is estimated to be 0.012 Bq for 36 000 s exposure and 0.023 Bq for 10 800 s exposure. The measured minimum detection threshold is less than 1600 electrons (equivalent to about 6 keV Si). This real-time system for beta autoradiography offers lower pixel pitch and higher sensitive area than the previous Medipix1-based system. It has a 14C sensitivity better than that of micro channel plate based systems, which, however, shows higher spatial resolution and sensitive area.

  14. Distortion of the pixel grid in HST WFC3/UVIS and ACS/WFC CCD detectors and its astrometric correction

    NASA Astrophysics Data System (ADS)

    Kozhurina-Platais, Vera; Mackenty, John; Golimovski, David; Sirianni, Marco; Borncamp, David; Anderson, Jay; Grogin, Norman

    2016-07-01

    The geometric distortion of the CCD detectors used in the Hubble Space TelescopeWide Field Camera 3 (WFC3) and Advanced Camera for Surveys (ACS) instruments is characterized by both large and fine-scale distortions. The large-scale distortion, due to the complexity of the HST optical assembly, can be modeled by a high-order polynomial. The majority of fine-distortion is inherent to the CCD detectors themselves, which manifests itself as fine-scale, correlated systematic offsets in the residuals from the best-fit polynomial solution. Such systematic offsets across the CCD chip introduce astrometric errors at the level of about 0.1 pix (up to 1.5 μm within the 15 μm pixels). These fine-scale and low-amplitude distortions apparently arise from the spatial irregularities in the pixel grid. For the WFC3/UVIS CCD chips, there is a clear pattern of periodic skew in the lithographic-mask stencil imprinted onto the detector. Similar irregularities in the pixel grid of ACS/WFC CCD chips are even more pronounced by the narrow (68×2048 pixel) lithographic-mask stencil. To remove these distortions, a 2-D correction in the form of a look-up table has been developed using HST images of very dense stellar fields. The post-correction of fine-scale astrometric errors can be removed down to the level of 0.01 pix (0.15 μm) or better.

  15. THE IMAGING PROPERTIES OF THE GAS PIXEL DETECTOR AS A FOCAL PLANE POLARIMETER

    SciTech Connect

    Fabiani, S.; Costa, E.; Del Monte, E.; Muleri, F.; Soffitta, P.; Rubini, A.; Bellazzini, R.; Brez, A.; De Ruvo, L.; Minuti, M.; Pinchera, M.; Sgró, C.; Spandre, G.; Spiga, D.; Tagliaferri, G.; Pareschi, G.; Basso, S.; Citterio, O.; Burwitz, V.; Burkert, W.; and others

    2014-06-01

    X-rays are particularly suited to probing the physics of extreme objects. However, despite the enormous improvements of X-ray astronomy in imaging, spectroscopy, and timing, polarimetry remains largely unexplored. We propose the photoelectric polarimeter Gas Pixel Detector (GPD) as a candidate instrument to fill the gap created by more than 30 yr without measurements. The GPD, in the focus of a telescope, will increase the sensitivity of orders of magnitude. Moreover, since it can measure the energy, the position, the arrival time, and the polarization angle of every single photon, it allows us to perform polarimetry of subsets of data singled out from the spectrum, the light curve, or an image of the source. The GPD has an intrinsic, very fine imaging capability, and in this work we report on the calibration campaign carried out in 2012 at the PANTER X-ray testing facility of the Max-Planck-Institut für extraterrestrische Physik of Garching (Germany) in which, for the first time, we coupled it with a JET-X optics module with a focal length of 3.5 m and an angular resolution of 18 arcsec at 4.5 keV. This configuration was proposed in 2012 aboard the X-ray Imaging Polarimetry Explorer (XIPE) in response to the ESA call for a small mission. We derived the imaging and polarimetric performance for extended sources like pulsar wind nebulae and supernova remnants as case studies for the XIPE configuration and also discuss possible improvements by coupling the detector with advanced optics that have a finer angular resolution and larger effective areas to study extended objects with more detail.

  16. The Imaging Properties of the Gas Pixel Detector as a Focal Plane Polarimeter

    NASA Astrophysics Data System (ADS)

    Fabiani, S.; Costa, E.; Del Monte, E.; Muleri, F.; Soffitta, P.; Rubini, A.; Bellazzini, R.; Brez, A.; de Ruvo, L.; Minuti, M.; Pinchera, M.; Sgró, C.; Spandre, G.; Spiga, D.; Tagliaferri, G.; Pareschi, G.; Basso, S.; Citterio, O.; Burwitz, V.; Burkert, W.; Menz, B.; Hartner, G.

    2014-06-01

    X-rays are particularly suited to probing the physics of extreme objects. However, despite the enormous improvements of X-ray astronomy in imaging, spectroscopy, and timing, polarimetry remains largely unexplored. We propose the photoelectric polarimeter Gas Pixel Detector (GPD) as a candidate instrument to fill the gap created by more than 30 yr without measurements. The GPD, in the focus of a telescope, will increase the sensitivity of orders of magnitude. Moreover, since it can measure the energy, the position, the arrival time, and the polarization angle of every single photon, it allows us to perform polarimetry of subsets of data singled out from the spectrum, the light curve, or an image of the source. The GPD has an intrinsic, very fine imaging capability, and in this work we report on the calibration campaign carried out in 2012 at the PANTER X-ray testing facility of the Max-Planck-Institut für extraterrestrische Physik of Garching (Germany) in which, for the first time, we coupled it with a JET-X optics module with a focal length of 3.5 m and an angular resolution of 18 arcsec at 4.5 keV. This configuration was proposed in 2012 aboard the X-ray Imaging Polarimetry Explorer (XIPE) in response to the ESA call for a small mission. We derived the imaging and polarimetric performance for extended sources like pulsar wind nebulae and supernova remnants as case studies for the XIPE configuration and also discuss possible improvements by coupling the detector with advanced optics that have a finer angular resolution and larger effective areas to study extended objects with more detail.

  17. Power and area efficient 4-bit column-level ADC in a CMOS pixel sensor for the ILD vertex detector

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Morel, F.; Hu-Guo, Ch; Hu, Y.

    2013-01-01

    A 48 × 64 pixels prototype CMOS pixel sensor (CPS) integrated with 4-bit column-level, self triggered ADCs for the outer layers of the ILD vertex detector (VTX) was developed and fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation. The ADCs accommodating the pixel read out in a rolling shutter mode complete the conversion by performing a multi-bit/step approximation. The design was optimised for power saving at sampling frequency. The prototype sensor is currently at the stage of being started testing and evaluation. So what is described is based on post simulation results rather than test data. This 4-bit ADC dissipates, at a 3-V supply and 6.25-MS/s sampling rate, 486 μW in its inactive mode, which is by far the most frequent. This value rises to 714 μW in case of the active mode. Its footprint amounts to 35 × 545 μm2.

  18. Fabrication of 721-pixel silicon lens array of a microwave kinetic inductance detector camera

    NASA Astrophysics Data System (ADS)

    Mitsui, Kenji; Nitta, Tom; Okada, Norio; Sekimoto, Yutaro; Karatsu, Kenichi; Sekiguchi, Shigeyuki; Sekine, Masakazu; Noguchi, Takashi

    2015-04-01

    We have been developed a lens-integrated superconducting camera for millimeter and submillimeter astronomy. High-purity silicon (Si) is suitable for the lens array of the microwave kinetic inductance detector camera due to its high refractive index and low dielectric loss at low temperatures. The camera is an antenna-coupled Al coplanar waveguide on a Si substrate. Thus the lens and the device are made of the same material. We report a fabrication method of a 721-pixel Si lens array with an antireflection (AR) coating. The Si lens array was fabricated with an ultraprecision cutting machine. It uses TiAlN-coated carbide end mills attached with a high-speed spindle. The shape accuracy was less than 50 μm peak-to-valley and the surface roughness was arithmetic average roughness (Ra) of 1.8 μm. The mixed epoxy was used as an AR coating to adjust the refractive index. It was shaved to yield a thickness of 185 μm for 220 GHz. Narrow grooves were made between the lenses to prevent cracking due to the different thermal expansion coefficients of Si and the epoxy. The surface roughness of the AR coating was Ra of 2.4 to 4.2 μm.

  19. Performance of the reconstruction algorithms of the FIRST experiment pixel sensors vertex detector

    NASA Astrophysics Data System (ADS)

    Rescigno, R.; Finck, Ch.; Juliani, D.; Spiriti, E.; Baudot, J.; Abou-Haidar, Z.; Agodi, C.; Alvarez, M. A. G.; Aumann, T.; Battistoni, G.; Bocci, A.; Böhlen, T. T.; Boudard, A.; Brunetti, A.; Carpinelli, M.; Cirrone, G. A. P.; Cortes-Giraldo, M. A.; Cuttone, G.; De Napoli, M.; Durante, M.; Gallardo, M. I.; Golosio, B.; Iarocci, E.; Iazzi, F.; Ickert, G.; Introzzi, R.; Krimmer, J.; Kurz, N.; Labalme, M.; Leifels, Y.; Le Fevre, A.; Leray, S.; Marchetto, F.; Monaco, V.; Morone, M. C.; Oliva, P.; Paoloni, A.; Patera, V.; Piersanti, L.; Pleskac, R.; Quesada, J. M.; Randazzo, N.; Romano, F.; Rossi, D.; Rousseau, M.; Sacchi, R.; Sala, P.; Sarti, A.; Scheidenberger, C.; Schuy, C.; Sciubba, A.; Sfienti, C.; Simon, H.; Sipala, V.; Tropea, S.; Vanstalle, M.; Younis, H.

    2014-12-01

    Hadrontherapy treatments use charged particles (e.g. protons and carbon ions) to treat tumors. During a therapeutic treatment with carbon ions, the beam undergoes nuclear fragmentation processes giving rise to significant yields of secondary charged particles. An accurate prediction of these production rates is necessary to estimate precisely the dose deposited into the tumours and the surrounding healthy tissues. Nowadays, a limited set of double differential carbon fragmentation cross-section is available. Experimental data are necessary to benchmark Monte Carlo simulations for their use in hadrontherapy. The purpose of the FIRST experiment is to study nuclear fragmentation processes of ions with kinetic energy in the range from 100 to 1000 MeV/u. Tracks are reconstructed using information from a pixel silicon detector based on the CMOS technology. The performances achieved using this device for hadrontherapy purpose are discussed. For each reconstruction step (clustering, tracking and vertexing), different methods are implemented. The algorithm performances and the accuracy on reconstructed observables are evaluated on the basis of simulated and experimental data.

  20. Efficient phase contrast imaging in STEM using a pixelated detector. Part 1: experimental demonstration at atomic resolution.

    PubMed

    Pennycook, Timothy J; Lupini, Andrew R; Yang, Hao; Murfitt, Matthew F; Jones, Lewys; Nellist, Peter D

    2015-04-01

    We demonstrate a method to achieve high efficiency phase contrast imaging in aberration corrected scanning transmission electron microscopy (STEM) with a pixelated detector. The pixelated detector is used to record the Ronchigram as a function of probe position which is then analyzed with ptychography. Ptychography has previously been used to provide super-resolution beyond the diffraction limit of the optics, alongside numerically correcting for spherical aberration. Here we rely on a hardware aberration corrector to eliminate aberrations, but use the pixelated detector data set to utilize the largest possible volume of Fourier space to create high efficiency phase contrast images. The use of ptychography to diagnose the effects of chromatic aberration is also demonstrated. Finally, the four dimensional dataset is used to compare different bright field detector configurations from the same scan for a sample of bilayer graphene. Our method of high efficiency ptychography produces the clearest images, while annular bright field produces almost no contrast for an in-focus aberration-corrected probe.

  1. Efficient phase contrast imaging in STEM using a pixelated detector. Part 1: Experimental demonstration at atomic resolution

    DOE PAGES

    Pennycook, Timothy J.; Lupini, Andrew R.; Yang, Hao; Murfitt, Matthew F.; Jones, Lewys; Nellist, Peter D.

    2014-10-15

    In this paper, we demonstrate a method to achieve high efficiency phase contrast imaging in aberration corrected scanning transmission electron microscopy (STEM) with a pixelated detector. The pixelated detector is used to record the Ronchigram as a function of probe position which is then analyzed with ptychography. Ptychography has previously been used to provide super-resolution beyond the diffraction limit of the optics, alongside numerically correcting for spherical aberration. Here we rely on a hardware aberration corrector to eliminate aberrations, but use the pixelated detector data set to utilize the largest possible volume of Fourier space to create high efficiency phasemore » contrast images. The use of ptychography to diagnose the effects of chromatic aberration is also demonstrated. In conclusion, the four dimensional dataset is used to compare different bright field detector configurations from the same scan for a sample of bilayer graphene. Our method of high efficiency ptychography produces the clearest images, while annular bright field produces almost no contrast for an in-focus aberration-corrected probe.« less

  2. Efficient phase contrast imaging in STEM using a pixelated detector. Part 1: Experimental demonstration at atomic resolution

    SciTech Connect

    Pennycook, Timothy J.; Lupini, Andrew R.; Yang, Hao; Murfitt, Matthew F.; Jones, Lewys; Nellist, Peter D.

    2014-10-15

    In this paper, we demonstrate a method to achieve high efficiency phase contrast imaging in aberration corrected scanning transmission electron microscopy (STEM) with a pixelated detector. The pixelated detector is used to record the Ronchigram as a function of probe position which is then analyzed with ptychography. Ptychography has previously been used to provide super-resolution beyond the diffraction limit of the optics, alongside numerically correcting for spherical aberration. Here we rely on a hardware aberration corrector to eliminate aberrations, but use the pixelated detector data set to utilize the largest possible volume of Fourier space to create high efficiency phase contrast images. The use of ptychography to diagnose the effects of chromatic aberration is also demonstrated. In conclusion, the four dimensional dataset is used to compare different bright field detector configurations from the same scan for a sample of bilayer graphene. Our method of high efficiency ptychography produces the clearest images, while annular bright field produces almost no contrast for an in-focus aberration-corrected probe.

  3. X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

    NASA Astrophysics Data System (ADS)

    Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

    2007-03-01

    High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

  4. Classical two-dimensional numerical algorithm for ?-Induced charge carrier advection-diffusion in Medipix-3 silicon pixel detectors

    NASA Astrophysics Data System (ADS)

    Biamonte, Mason; Idarraga, John

    2013-04-01

    A classical hybrid alternating-direction implicit difference scheme is used to simulate two-dimensional charge carrier advection-diffusion induced by alpha particles incident upon silicon pixel detectors at room temperature in vacuum. A mapping between the results of the simulation and a projection of the cluster size for each incident alpha is constructed. The error between the simulation and the experimental data diminishes with the increase in the applied voltage for the pixels in the central region of the cluster. Simulated peripheral pixel TOT values do not match the data for any value of applied voltage, suggesting possible modifications to the current algorithm from first principles. Coulomb repulsion between charge carriers is built into the algorithm using the Barnes-Hut tree algorithm. The plasma effect arising from the initial presence of holes in the silicon is incorporated into the simulation. The error between the simulation and the data helps identify physics not accounted for in standard literature simulation techniques.

  5. Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

    NASA Astrophysics Data System (ADS)

    Nellist, C.; Dinu, N.; Gkougkousis, E.; Lounis, A.

    2015-06-01

    The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses. To operate under these challenging new conditions, and maintain excellent performance in track reconstruction and vertex location, the ATLAS pixel detector must be substantially upgraded and a full replacement is expected. Processing techniques for novel pixel designs are optimised through characterisation of test structures in a clean room and also through simulations with Technology Computer Aided Design (TCAD). A method to study non-perpendicular tracks through a pixel device is discussed. Comparison of TCAD simulations with Secondary Ion Mass Spectrometry (SIMS) measurements to investigate the doping profile of structures and validate the simulation process is also presented.

  6. Characterization of thin pixel sensor modules interconnected with SLID technology irradiated to a fluence of 2ṡ1015 neq/cm2.

    NASA Astrophysics Data System (ADS)

    Weigell, P.; Andricek, L.; Beimforde, M.; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.-H.

    2011-12-01

    A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to 2ṡ1015 neq/cm2 are discussed. Additionally, the etching of ICV into the front-end wafers was started. ICVs will be used to route the signals vertically through the front-end chip, to newly created pads on the backside. In the EMFT approach the chip wafer is thinned to (50-60) μm.

  7. The TDCpix readout ASIC: A 75 ps resolution timing front-end for the NA62 Gigatracker hybrid pixel detector

    NASA Astrophysics Data System (ADS)

    Kluge, A.; Aglieri Rinella, G.; Bonacini, S.; Jarron, P.; Kaplon, J.; Morel, M.; Noy, M.; Perktold, L.; Poltorak, K.

    2013-12-01

    The TDCpix is a novel pixel readout ASIC for the NA62 Gigatracker detector. NA62 is a new experiment being installed at the CERN Super Proton Synchrotron. Its Gigatracker detector shall provide on-beam tracking and time stamping of individual particles with a time resolution of 150 ps rms. It will consist of three tracking stations, each with one hybrid pixel sensor. The peak flow of particles crossing the detector modules reaches 1.27 MHz/mm2 for a total rate of about 0.75 GHz. Ten TDCpix chips will be bump-bonded to every silicon pixel sensor. Each chip shall perform time stamping of 100 M particle hits per second with a detection efficiency above 99% and a timing accuracy better than 200 ps rms for an overall three-station-setup time resolution of better than 150 ps. The TDCpix chip has been designed in a 130 nm CMOS technology. It will feature 45×40 square pixels of 300×300 μm2 and a complex End of Column peripheral region including an array of TDCs based on DLLs, four high speed serializers, a low-jitter PLL, readout and control circuits. This contribution will describe the complete design of the final TDCpix ASIC. It will discuss design choices, the challenges faced and some of the lessons learned. Furthermore, experimental results from the testing of circuit prototypes will be presented. These demonstrate the achievement of key performance figures such as a time resolution of the processing chain of 75 ps rms with a laser sent to the center of the pixel and the capability of time stamping charged particles with an overall resolution below 200 ps rms.

  8. Improved Imaging in Low Energy Electron Microscopy and Photo Emission Electron Microscopy Using MEDIPIX2 Pixel Detector

    NASA Astrophysics Data System (ADS)

    Sikharulidze, I.; van Gastel, R.; Schramm, S.; Abrahams, J. P.; Poelsema, B.; Trom, R. M.; van der Molen, S. J.

    2010-04-01

    The application of the Medipix2 hybrid pixel detector in Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) led to an improvement of the recorded image quality compared to the original setup based on microchannel plate (MCP), phosphor screen and CCD. The measurements were performed on an Elmitec LEEM III instrument without energy filter using an Ir(111) sample with graphene islands grown on the surface. The Medipix2 images exhibited better resolution and higher contrast compared to the MCP data. The results suggest that Medipix2 has potential to become the detector of choice for LEEM/PEEM instruments.

  9. CZT detectors used in different irradiation geometries: Simulations and experimental results

    SciTech Connect

    Fritz, Shannon G.; Shikhaliev, Polad M.

    2009-04-15

    The purpose of this work was to evaluate potential advantages and limitations of CZT detectors used in surface-on, edge-on, and tilted angle irradiation geometries. Simulations and experimental investigations of the energy spectrum measured by a CZT detector have been performed using different irradiation geometries of the CZT. Experiments were performed using a CZT detector with 10x10 mm{sup 2} size and 3 mm thickness. The detector was irradiated with collimated photon beams from Am-241 (59.5 keV) and Co-57 (122 keV). The edge-scan method was used to measure the detector response function in edge-on illumination mode. The tilted angle mode was investigated with the radiation beam directed to the detector surface at angles of 90 degree sign , 15 degree sign , and 10 degree sign . The Hecht formalism was used to simulate theoretical energy spectra. The parameters used for simulations were matched to experiment to compare experimental and theoretical results. The tilted angle CZT detector suppressed the tailing of the spectrum and provided an increase in peak-to-total ratio from 38% at 90 degree sign to 83% at 10 degree sign tilt angle for 122 keV radiation. The corresponding increase for 59 keV radiation was from 60% at 90 degree sign to 85% at 10 degree sign tilt angle. The edge-on CZT detector provided high energy resolution when the beam thickness was much smaller than the thickness of CZT. The FWHM resolution in edge-on illumination mode was 4.2% for 122 keV beam with 0.3 mm thickness, and rapidly deteriorated when the thickness of the beam was increased. The energy resolution of surface-on geometry suffered from strong tailing effect at photon energies higher than 60 keV. It is concluded that tilted angle CZT provides high energy resolution but it is limited to a 1D linear array configuration. The surface-on CZT provides 2D pixel arrays but suffers from tailing effect and charge build up. The edge-on CZT is considered suboptimal as it requires small beam

  10. Apodized-aperture pixel design to increase high-frequency DQE and reduce noise aliasing in x-ray detectors

    NASA Astrophysics Data System (ADS)

    Ismailova, Elina; Karim, Karim; Cunningham, Ian A.

    2015-03-01

    The detective quantum efficiency (DQE) of an x-ray detector, expressed as a function of spatial frequency, describes the ability to produce high-quality images relative to an ideal detector. While the DQE normally decreases substantially with increasing frequency, we describe an approach that can be used to improve the DQE response by increasing the DQE at high spatial frequencies. The approach makes use of an apodized-aperture pixel (AAP) design that requires use of a high-resolution x-ray converter such as selenium coupled to a sensor array with very small physical sensor elements, such as CMOS sensors. While sensors with elements of 10 - 25 μm are too small for most practical applications in medical radiography, we describe how larger image pixels of a practical size can be synthesized to provide a better DQE than simple binning or using physical pixels of the same size. A theoretical cascaded-systems analysis shows the DQE at the image sampling cut-off frequency can be improved by up to a factor of 2.5x. The AAP approach was validated experimentally using a CMOS/CsI-based detector having 0.05-mm sensor elements. Using AAP images with 0.2-mm pixels, the high-frequency DQE value was increased from 0.2 to 0.4 compared to simple 4x4 binning. It is concluded that ultra-high-resolution sensors can be used to optimize the high-frequency performance of x-ray detectors and make substantial improvements in image quality for visualization of small stuctures and fine image detail in comparison to current imaging systems.

  11. Charge collection studies in irradiated HV-CMOS particle detectors

    NASA Astrophysics Data System (ADS)

    Affolder, A.; Andelković, M.; Arndt, K.; Bates, R.; Blue, A.; Bortoletto, D.; Buttar, C.; Caragiulo, P.; Cindro, V.; Das, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Galloway, Z.; Gorišek, A.; Grabas, H.; Gregor, I. M.; Grenier, P.; Grillo, A.; Hommels, L. B. A.; Huffman, T.; John, J.; Kanisauskas, K.; Kenney, C.; Kramberger, G.; Liang, Z.; Mandić, I.; Maneuski, D.; McMahon, S.; Mikuž, M.; Muenstermann, D.; Nickerson, R.; Perić, I.; Phillips, P.; Plackett, R.; Rubbo, F.; Segal, J.; Seiden, A.; Shipsey, I.; Song, W.; Stanitzki, M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F.; Worm, S.; Xiu, Q.; Zavrtanik, M.; Zhang, J.; Zhu, H.

    2016-04-01

    Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.

  12. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; Soldner, S.; Vernon, E.; Yang, G.; James, R. B.

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.

  13. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    SciTech Connect

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; Soldner, S.; Vernon, E.; Yang, G.; James, R. B.

    2015-09-06

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.

  14. Development of a fast pixel array detector for use in microsecond time-resolved x-ray diffraction

    SciTech Connect

    Barna, S.L.; Gruner, S.M.; Shepherd, J.A.

    1995-08-01

    A large-area pixel x-ray detector is being developed to collect eight successive frames of wide dynamic range two-dimensional images at 200kHz rates. Such a detector, in conjunction with a synchrotron radiation x-ray source, will enable time-resolved x-ray studies of proteins and other materials on time scales which have previously been inaccessible. The detector will consist of an array of fully-depleted 150 micron square diodes connected to a CMOS integrated electronics layer with solder bump-bonding. During each framing period, the current resulting from the x-rays stopped in the diodes is integrated in the electronics layer, and then stored in one of eight storage capacitors underneath the pixel. After the last frame, the capacitors are read out at standard data transmission rates. The detector has been designed for a well-depth of at least 10,000 x-rays (at 20keV), and a noise level of one x-ray. Ultimately, the authors intend to construct a detector with over one million pixels (1024 by 1024). They present the results of their development effort and various features of the design. The electronics design is discussed, with special attention to the performance requirements. The choice and design of the detective diodes, as they relate to x-ray stopping power and charge collection, are presented. An analysis of various methods of bump bonding is also presented. Finally, the authors discuss the possible need for a radiation-blocking layer, to be placed between the electronics and the detective layer, and various methods they have pursued in the construction of such a layer.

  15. Development of a soft-X ray detector for energy resolved 2D imaging by means of a Gas Pixel Detector with highly integrated microelectronics

    SciTech Connect

    Pacella, D.; Pizzicaroli, G.; Romano, A.; Gabellieri, L.; Bellazzini, R.; Brez, A.

    2008-03-12

    Soft-X ray 2-D imaging on ITER is not considered yet. We propose a new approach, based on a gas detector with a gas electron multiplier (GEM) as amplifying structure and with a two-dimensional readout fully integrated with the front end electronics, through an ASIC developed on purpose. The concept has been already tested by means of a prototype, with 128 pixels, carried out in Frascati in collaboration with INFN-Pisa and tested on FTU in 2001 and NSTX in 2002-2004. Thanks to the photon counting mode, it provides 2-D imaging with high time resolution (sub millisecond), high sensitivity and signal to noise ratio. Its capability of energy discrimination allows the acquisition of pictures in X-ray energy bands or to perform a spectral scan in the full energy interval. We propose the realisation of such kind a detector with a readout microchip (ASIC) equipped with 105600 hexagonal pixels arranged at 70 {mu}m pitch in a 300x352 honeycomb matrix, corresponding to an active area of 2.1x2.1 cm{sup 2}, with a pixel density of 240 pixels/ mm{sup 2}. Each pixel is connected to a charge sensitive amplifier followed by a discriminator of pulse amplitude and counter. The chip integrates more than 16.5 million transistors and it is subdivided in 64 identical clusters, to be read independently each other. An important part of the work will be also the design of the whole detector to fulfil all the constraints and requirements as plasma diagnostic in a tokamak machine. Since the detector has high and controllable intrinsic gain, it works well even at very low photon energy, ranging from 0.2 keV to 10 keV (X-VUV region). This range appears therefore particularly suitable for ITER to monitor the outer part of the plasma. In particular pedestal physics, edge modes, localization and effects of additional heating, boundary plasma control etc. The capability of this proposed detector to work in this energy range is further valuable because solid state detectors are not favorite at low

  16. Nuclear resonant scattering measurements on {sup 57}Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector

    SciTech Connect

    Kishimoto, S. Haruki, R.; Mitsui, T.; Yoda, Y.; Taniguchi, T.; Shimazaki, S.; Ikeno, M.; Saito, M.; Tanaka, M.

    2014-11-15

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10{sup 7} cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on {sup 57}Fe.

  17. Results from the NA62 Gigatracker Prototype: A Low-Mass and sub-ns Time Resolution Silicon Pixel Detector

    NASA Astrophysics Data System (ADS)

    Fiorini, M.; Rinella, G. Aglieri; Carassiti, V.; Ceccucci, A.; Gil, E. Cortina; Ramusino, A. Cotta; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petagna, P.; Petrucci, F.; Perktold, L.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

    The Gigatracker (GTK) is a hybrid silicon pixel detector developed for NA62, the experiment aimed at studying ultra-rare kaon decays at the CERN SPS. Three GTK stations will provide precise momentum and angular measurements on every track of the high intensity NA62 hadron beam with a time-tagging resolution of 150 ps. Multiple scattering and hadronic interactions of beam particles in the GTK have to be minimized to keep background events at acceptable levels, hence the total material budget is fixed to 0.5% X0 per station. In addition the calculated fluence for 100 days of running is 2×1014 1 MeV neq/cm2, comparable to the one expected for the inner trackers of LHC detectors in 10 years of operation. These requirements pose challenges for the development of an efficient and low-mass cooling system, to be operated in vacuum, and on the thinning of read-out chips to 100 μm or less. The most challenging requirement is represented by the time resolution, which can be achieved by carefully compensating for the discriminator time-walk. For this purpose, two complementary read-out architectures have been designed and produced as small-scale prototypes: the first is based on the use of a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other uses a constant-fraction discriminator followed by an on-pixel TDC. The readout pixel ASICs are produced in 130 nm IBM CMOS technology and bump-bonded to 200 μm thick silicon sensors. The Gigatracker detector system is described with particular emphasis on recent experimental results obtained from laboratory and beam tests of prototype bump-bonded assemblies, which show a time resolution of less than 200 ps for single hits.

  18. PImMS, a fast event-triggered monolithic pixel detector with storage of multiple timestamps

    NASA Astrophysics Data System (ADS)

    John, J. J.; Brouard, M.; Clark, A.; Crooks, J.; Halford, E.; Hill, L.; Lee, J. W. L.; Nomerotski, A.; Pisarczyk, R.; Sedgwick, I.; Slater, C. S.; Turchetta, R.; Vallance, C.; Wilman, E.; Winter, B.; Yuen, W. H.

    2012-08-01

    PImMS, or Pixel Imaging Mass Spectrometry, is a novel high-speed monolithic CMOS imaging sensor tailored to mass spectrometry requirements, also suitable for other dark-field applications. In its application to time-of-flight mass spectrometry, the sensor permits ion arrival time distributions to be combined with 2D imaging, providing additional information about the initial position or velocity of ions under study. PImMS1, the first generation sensor in this family, comprises an array of 72 by 72 pixels on a 70 μm by 70 μm pitch. Pixels independently record digital timestamps when events occur over an adjustable threshold. Each pixel contains 4 memories to record timestamps at a resolution of 25 ns. The sensor was designed and manufactured in the INMAPS 0.18 μm process. This allows the inclusion of significant amounts of circuitry (over 600 transistors) within each pixel while maintaining good detection efficiency. We present an overview of the pixel and sensor architecture, explain its functioning and present test results, ranging from characterisation of the analogue front end of the pixel, to verification of its digital functions, to some first images captured on mass spectrometers. We conclude with an overview of the upcoming second generation of PImMS sensors.

  19. Dose response of alanine detectors irradiated with carbon ion beams

    SciTech Connect

    Herrmann, Rochus; Jaekel, Oliver; Palmans, Hugo; Sharpe, Peter; Bassler, Niels

    2011-04-15

    Purpose: The dose response of the alanine detector shows a dependence on particle energy and type when irradiated with ion beams. The purpose of this study is to investigate the response behavior of the alanine detector in clinical carbon ion beams and compare the results to model predictions. Methods: Alanine detectors have been irradiated with carbon ions with an energy range of 89-400 MeV/u. The relative effectiveness of alanine has been measured in this regime. Pristine and spread out Bragg peak depth-dose curves have been measured with alanine dosimeters. The track structure based alanine response model developed by Hansen and Olsen has been implemented in the Monte Carlo code FLUKA and calculations were compared to experimental results. Results: Calculations of the relative effectiveness deviate less than 5% from the measured values for monoenergetic beams. Measured depth-dose curves deviate from predictions in the peak region, most pronounced at the distal edge of the peak. Conclusions: The used model and its implementation show a good overall agreement for quasimonoenergetic measurements. Deviations in depth-dose measurements are mainly attributed to uncertainties of the detector geometry implemented in the Monte Carlo simulations.

  20. The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities

    NASA Astrophysics Data System (ADS)

    Rizzo, G.; Comotti, D.; Fabris, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Manghisoni, M.; Ratti, L.; Re, V.; Traversi, G.; Vacchi, C.; Batignani, G.; Bettarini, S.; Casarosa, G.; Forti, F.; Morsani, F.; Paladino, A.; Paoloni, E.; Dalla Betta, G.-F.; Pancheri, L.; Verzellesi, G.; Xu, H.; Mendicino, R.; Benkechkache, M. A.

    2015-02-01

    The PixFEL project aims to develop an advanced X-ray camera for imaging suited for the demanding requirements of next generation free electron laser (FEL) facilities. New technologies can be deployed to boost the performance of imaging detectors as well as future pixel devices for tracking. In the first phase of the PixFEL project, approved by the INFN, the focus will be on the development of the microelectronic building blocks, carried out with a 65 nm CMOS technology, implementing a low noise analog front-end channel with high dynamic range and compression features, a low power ADC and high density memory. At the same time PixFEL will investigate and implement some of the enabling technologies to assembly a seamless large area X-ray camera composed by a matrix of multilayer four-side buttable tiles. A pixel matrix with active edge will be developed to minimize the dead area of the sensor layer. Vertical interconnection of two CMOS tiers will be explored to build a four-side buttable readout chip with small pixel pitch and all the on-board required functionalities. The ambitious target requirements of the new pixel device are: single photon resolution, 1 to 104 photons @ 1 keV to 10 keV input dynamic range, 10-bit analog to digital conversion up to 5 MHz, 1 kevent in-pixel memory and 100 μm pixel pitch. The long term goal of PixFEL will be the development of a versatile X-ray camera to be operated either in burst mode (European XFEL), or in continuous mode to cope with the high frame rates foreseen for the upgrade phase of the LCLS-II at SLAC.

  1. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    DOE PAGES

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; et al

    2015-09-06

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixelmore » sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.« less

  2. The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

    NASA Astrophysics Data System (ADS)

    Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

    2011-02-01

    The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( <0.5% X0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

  3. Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

    NASA Technical Reports Server (NTRS)

    Rider, D.; Blavier, J-F.; Cunningham, T.; Hancock, B.; Key, R.; Pannell, Z.; Sander, S.; Seshadri, S.; Sun, C.; Wrigley, C.

    2011-01-01

    Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

  4. The ToPiX v4 prototype for the triggerless readout of the PANDA silicon pixel detector

    NASA Astrophysics Data System (ADS)

    Mazza, G.; Calvo, D.; De Remigis, P.; Mignone, M.; Olave, J.; Rivetti, A.; Wheadon, R.; Zotti, L.

    2015-01-01

    ToPiX v4 is the prototype for the readout of the silicon pixel sensors for the Micro Vertex Detector of the PANDA experiment. ToPiX provides position, time and energy measurement of the incoming particles and is designed for the triggerless environment foreseen in PANDA. The prototype includes 640 pixels with a size of 100 × 100 μm2, a 160 MHz time stamp distribution circuit to measure both particle arrival time and released energy (via ToT technique) and the full control logic. The ASIC is designed in a 0.13 μm CMOS technology with SEU protection techniques for the digital parts.

  5. A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

    SciTech Connect

    Biggeri, U.; Borchi, E.; Bruzzi, M.

    1998-06-01

    Silicon p{sup +}n junctions irradiated with neutron and proton fluences in the range 5 {times} 10{sup 11}--4 {times} 10{sup 15} cm{sup {minus}2} and non-irradiated Semi Insulating (SI) LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N{sub t} of the main radiation-induced deep traps (Et {approx} 0.44--0.54 eV) is found to increase as N{sub t} {alpha} f achieving values up to 5 {times} 10{sup 15} cm{sup {minus}3} and a mobility saturation at 100 cm{sup 2}/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.

  6. Parallel optical coherence tomography in scattering samples using a two-dimensional smart-pixel detector array

    NASA Astrophysics Data System (ADS)

    Ducros, M.; Laubscher, M.; Karamata, B.; Bourquin, S.; Lasser, T.; Salathé, R. P.

    2002-02-01

    Parallel optical coherence tomography in scattering samples is demonstrated using a 58×58 smart-pixel detector array. A femtosecond mode-locked Ti:Sapphire laser in combination with a free space Michelson interferometer was employed to achieve 4 μm longitudinal resolution and 9 μm transverse resolution on a 260×260 μm2 field of view. We imaged a resolution target covered by an intralipid solution with different scattering coefficients as well as onion cells.

  7. Correction of complex nonlinear signal response from a pixel array detector

    SciTech Connect

    van Driel, Tim Brandt; Herrmann, Sven; Carini, Gabriella; Nielsen, Martin Meedom; Lemke, Henrik Till

    2015-04-22

    The pulsed free-electron laser light sources represent a new challenge to photon area detectors due to the intrinsic spontaneous X-ray photon generation process that makes single-pulse detection necessary. Intensity fluctuations up to 100% between individual pulses lead to high linearity requirements in order to distinguish small signal changes. In real detectors, signal distortions as a function of the intensity distribution on the entire detector can occur. Here a robust method to correct this nonlinear response in an area detector is presented for the case of exposures to similar signals. The method is tested for the case of diffuse scattering from liquids where relevant sub-1% signal changes appear on the same order as artifacts induced by the detector electronics.

  8. Correction of complex nonlinear signal response from a pixel array detector

    PubMed Central

    van Driel, Tim Brandt; Herrmann, Sven; Carini, Gabriella; Nielsen, Martin Meedom; Lemke, Henrik Till

    2015-01-01

    The pulsed free-electron laser light sources represent a new challenge to photon area detectors due to the intrinsic spontaneous X-ray photon generation process that makes single-pulse detection necessary. Intensity fluctuations up to 100% between individual pulses lead to high linearity requirements in order to distinguish small signal changes. In real detectors, signal distortions as a function of the intensity distribution on the entire detector can occur. Here a robust method to correct this nonlinear response in an area detector is presented for the case of exposures to similar signals. The method is tested for the case of diffuse scattering from liquids where relevant sub-1% signal changes appear on the same order as artifacts induced by the detector electronics. PMID:25931072

  9. Correction of complex nonlinear signal response from a pixel array detector

    DOE PAGES

    van Driel, Tim Brandt; Herrmann, Sven; Carini, Gabriella; Nielsen, Martin Meedom; Lemke, Henrik Till

    2015-04-22

    The pulsed free-electron laser light sources represent a new challenge to photon area detectors due to the intrinsic spontaneous X-ray photon generation process that makes single-pulse detection necessary. Intensity fluctuations up to 100% between individual pulses lead to high linearity requirements in order to distinguish small signal changes. In real detectors, signal distortions as a function of the intensity distribution on the entire detector can occur. Here a robust method to correct this nonlinear response in an area detector is presented for the case of exposures to similar signals. The method is tested for the case of diffuse scattering frommore » liquids where relevant sub-1% signal changes appear on the same order as artifacts induced by the detector electronics.« less

  10. High speed data transmission on small gauge cables for the ATLAS Phase-II Pixel detector upgrade

    NASA Astrophysics Data System (ADS)

    Shahinian, J.; Volk, J.; Fadeyev, V.; Grillo, A. A.; Meimban, B.; Nielsen, J.; Wilder, M.

    2016-03-01

    The High Luminosity LHC will present a number of challenges for the upgraded ATLAS detector. In particular, data transmission requirements for the upgrade of the ATLAS Pixel detector will be difficult to meet. The expected trigger rate and occupancy imply multi-gigabit per second transmission rates will be required but radiation levels at the smallest radius preclude completely optical solutions. Electrical transmission up to distances of 7m will be necessary to move optical components to an area with lower radiation levels. Here, we explore the use of small gauge electrical cables as a high-bandwidth, radiation hard solution with a sufficiently small radiation length. In particular, we present a characterization of various twisted wire pair (TWP) configurations of various material structures, including measurements of their bandwidth, crosstalk, and radiation hardness. We find that a custom ``hybrid'' cable consisting of 1m of a multi-stranded TWP with Poly-Ether-Ether-Ketone (PEEK) insulation and a thin Al shield followed by 6m of a thin twin-axial cable presents a low-mass solution that fulfills bandwidth requirements and is expected to be sufficiently radiation hard. Additionally, we discuss preliminary results of using measured S-parameters to produce a SPICE model for a 1m sample of the custom TWP to be used for the development of new pixel readout chips.

  11. Development of Superconducting Tunnel Junction X-ray Detector with High Absorption Yields Utilizing Silicon Pixel Absorbers

    NASA Astrophysics Data System (ADS)

    Shiki, Shigetomo; Fujii, Go; Ukibe, Masahiro; Kitajima, Yoshinori; Ohkubo, Masataka

    2016-07-01

    A superconducting tunnel junction (STJ) array detector along with silicon pixel absorbers (STJ-SPA) is fabricated to achieve high detection efficiency at X-ray energies below 10 keV. The STJ pixels have dimensions of 100 \\upmu m × 100 \\upmu m and are composed of Nb-Al/AlOX/Al-Nb thin layers. The SPAs are also 100 \\upmu m × 100 \\upmu m and have a depth of 400 \\upmu m, and are isolated from each other by a deep trench with a depth of 350 \\upmu m. The detection efficiency of the STJ-SPA exceeds 95 % at X-ray energies below 10 keV, and its energy resolution is 82 eV FWHM, as measured at the Si K\\upalpha line at 1740 eV. By means of the STJ-SPA detector, the X-ray absorption spectrum of the light element sulfur with a concentration of less than 0.1 wt% in a soda-lime glass sample was successfully acquired.

  12. Photon counting X-ray imaging with CdTe pixel detectors based on XPAD2 circuit

    NASA Astrophysics Data System (ADS)

    Franchi, Romain; Glasser, Francis; Gasse, Adrien; Clemens, Jean-Claude

    2006-07-01

    A semiconductor hybrid pixel detector for photon counting X-ray imaging has been developed and tested under radiation. The sensor is based on recent uniform CdTe single crystal associated with XPAD 2 counting chip via innovative processes of interconnection. The building detector is 1 mm thick, with an area of 1 cm 2 and consists of 600 square pixels cells 330 μm side. The readout chip working in electron collection mode is capable of setting homogeneous threshold with only a dispersion of 730 e -. Maximum noise level has been evaluated around 15 keV. First experiments under X-rays demonstrate a very good efficiency of detection. Moreover, imaging system allows excellent linearity over a large-scale achieving count rate of 3×10 6 photons/s/mm 2. Spectrometric measurements point up the system potential in multi-energies applications by locating and resolving X-rays lines of 241Am and 57Co sources.

  13. Measurements and simulations of MAPS (Monolithic Active Pixel Sensors) response to charged particles - a study towards a vertex detector at the ILC

    NASA Astrophysics Data System (ADS)

    Maczewski, Lukasz

    2010-05-01

    The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector concepts for the ILC vertex detector (VTX). Basic characteristics of two MAPS pixel matrices MIMOSA-5 (17 μm pixel pitch) and MIMOSA-18 (10 μm pixel pitch) are studied and compared (pedestals, noises, calibration of the ADC-to-electron conversion gain, detector efficiency and charge collection properties). The e+e- collisions at the ILC will be accompanied by intense beamsstrahlung background of electrons and positrons hitting inner planes of the vertex detector. Tracks of this origin leave elongated clusters contrary to those of secondary hadrons. Cluster characteristics and orientation with respect to the pixels netting are studied for perpendicular and inclined tracks. Elongation and precision of determining the cluster orientation as a function of the angle of incidence were measured. A simple model of signal formation (based on charge diffusion) is proposed and tested using the collected data.

  14. A count-rate model for PET scanners using pixelated Anger-logic detectors with different scintillators

    NASA Astrophysics Data System (ADS)

    Surti, S.; Karp, J. S.

    2005-12-01

    A high count-rate simulation (HCRSim) model has been developed so that all results are derived from fundamental physics principles. Originally developed to study the behaviour of continuous sodium iodide (NaI(Tl)) detectors, this model is now applied to PET scanners based on pixelated Anger-logic detectors using lanthanum bromide (LaBr3), gadolinium orthosilicate (GSO) and lutetium orthosilicate (LSO) scintillators. This simulation has been used to study the effect on scanner deadtime and pulse pileup at high activity levels due to the scintillator stopping power (μ), decay time (τ) and energy resolution. Simulations were performed for a uniform 20 cm diameter × 70 cm long cylinder (NEMA NU2-2001 standard) in a whole-body scanner with an 85 cm ring diameter and a 25 cm axial field-of-view. Our results for these whole-body scanners demonstrate the potential of a pixelated Anger-logic detector and the relationship of its performance with the scanner NEC rate. Faster signal decay and short coincidence timing window lead to a reduction in deadtime and randoms fraction in the LaBr3 and LSO scanners compared to GSO. The excellent energy resolution of LaBr3 leads to the lowest scatter fraction for all scanners and helps compensate for reduced sensitivity compared to the GSO and LSO scanners, leading to the highest NEC values at high activity concentrations. The LSO scanner has the highest sensitivity of all the scanner designs investigated here, therefore leading to the highest peak NEC value but at a lower activity concentration than that of LaBr3.

  15. Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

    NASA Astrophysics Data System (ADS)

    Jain, G.; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichorn, T.; Fernandez, M.; Lalwani, K.; Messineo, A.; Palomo, F. R.; Peltola, T.; Printz, M.; Ranjan, K.; Villa, I.; Hidalgo, S.

    2016-07-01

    In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

  16. Simulation of single-event energy-deposition spreading in a hybrid pixellated detector for γ imaging

    NASA Astrophysics Data System (ADS)

    Manach, Erwan; Gal, Olivier

    2002-07-01

    In the framework of the Medipix2 Collaboration, a new photon-counting chip is being developed made of a 256×256 array of 55 μm-side square pixels. Although the chip was primarily developed for semiconductor X-ray imagers, we think that this type of device could be used in applications such as decommissioning of nuclear facilities where typical sources have γ-ray energies in the range of a few hundred keV. In order to enhance the detection efficiency in this energy range, we envisage connecting the Medipix2 chip to a CdTe or CdZnTe substrate (at least 1 mm thick). The small pixel size, the thickness of the Cd(Zn)Te substrate and the high photon energy motivate us to estimate first the spatial energy spreading following a photon interaction inside the detector. Estimations were made using the MCNP Monte Carlo package by simulating the individual energy distribution for each primary photon interaction. As an illustration of our results, simulating a 660 keV γ source, we found that there are two pixels on average, for each primary interaction, on which the deposited energy exceeds 50 keV. We have also made more accurate simulations using sub-pixels of side 11 μm, in order to evaluate the distance between the barycentre of the deposited energy and the photon impact point. As an example, with a 660 keV γ source, we found that the average of this distance reaches 67 μm when restricted to the events depositing more than 400 keV. If all events are taken into account, the mean distance is 26 μm, even though there is a small proportion of interactions where the scattered photon interacts somewhere else in the detector. Results are presented for different photon energies (60 keV, 660 keV, 1.25 MeV) and different materials (CdTe, GaAs).

  17. 65 nm CMOS analog front-end for pixel detectors at the HL-LHC

    NASA Astrophysics Data System (ADS)

    Gaioni, L.; De Canio, F.; Manghisoni, M.; Ratti, L.; Re, V.; Traversi, G.

    2016-02-01

    This work is concerned with the design and the experimental characterization of analog front-end electronics conceived for experiments with unprecedented particle rates and radiation levels at future high-energy physics colliders. A prototype chip integrating different test structures has been submitted in the framework of the CHIPIX65 project. These structures are standalone channels for the readout of hybrid pixels, featuring a charge sensitive preamplifier as the first stage of the readout chain, a high-speed comparator and a circuit for fine threshold tuning. The paper thoroughly discusses the results, mainly focused on the charge sensitive amplifier, coming from the characterization of the submitted test structures.

  18. FDM Readout Assembly with Flexible, Superconducting Connection to Cryogenic kilo-Pixel TES Detectors

    NASA Astrophysics Data System (ADS)

    Bruijn, M. P.; van der Linden, A. J.; Ridder, M. L.; van Weers, H. J.

    2016-07-01

    We describe a new fabrication process for a superconducting, flexible, and demountable connector to a kilo-pixel transition edge sensor. The demountable part contains planar coils for inductive coupling, in particular suited for AC-biased frequency domain multiplexed readout. A fixed connection to a chip with superconducting LC filters and SQUID readout is made by gold bump bonding with a connection resistance of 1.1 {× } 10^{-4} Ω . The Nb-based connecting lines on the flexible part show a superconducting transition around 7 K, which enables testing of connectors and LC filters in a simple L-He setup.

  19. Four-layer depth-of-interaction PET detector for high resolution PET using a multi-pixel S8550 avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Nishikido, Fumihiko; Inadama, Naoko; Oda, Ichiro; Shibuya, Kengo; Yoshida, Eiji; Yamaya, Taiga; Kitamura, Keishi; Murayama, Hideo

    2010-09-01

    Avalanche photodiodes (APDs) are being used as photodetectors in positron emission tomography (PET) because they have many advantages over photomultipliers (PMTs) typically used in PET detectors. We have developed a PET detector that consists of a multi-pixel APD and a 6×6×4 array of 1.46×1.46 mm 2×4.5 m LYSO crystals for a small animal PET scanner. The detector can identify four-layer depth of interaction (DOI) with a position-sensitive APD coupled to the backside of a crystal array by just an optimized reflector arrangement. Since scintillation lights are shared among many pixels by the method, weaker signals in APD pixels far from the interacting crystals are affected by noise. To evaluate the performance of the four-layer DOI detector with the APD and the influence of electrical noise on our method, we constructed a prototype DOI detector and tested its performance. We found, except for crystal elements on the edge of the crystal array, all crystal elements could be identified from the 2D position histogram. An energy resolution of 16.9% was obtained for the whole crystal array of the APD detector. The results of noise dependence of detector performances indicated that the DOI detector using the APD could achieve sufficient performance even when using application-specific integrated circuits.

  20. An algorithm for automatic crystal identification in pixelated scintillation detectors using thin plate splines and Gaussian mixture models.

    PubMed

    Schellenberg, Graham; Stortz, Greg; Goertzen, Andrew L

    2016-02-01

    A typical positron emission tomography detector is comprised of a scintillator crystal array coupled to a photodetector array or other position sensitive detector. Such detectors using light sharing to read out crystal elements require the creation of a crystal lookup table (CLUT) that maps the detector response to the crystal of interaction based on the x-y position of the event calculated through Anger-type logic. It is vital for system performance that these CLUTs be accurate so that the location of events can be accurately identified and so that crystal-specific corrections, such as energy windowing or time alignment, can be applied. While using manual segmentation of the flood image to create the CLUT is a simple and reliable approach, it is both tedious and time consuming for systems with large numbers of crystal elements. In this work we describe the development of an automated algorithm for CLUT generation that uses a Gaussian mixture model paired with thin plate splines (TPS) to iteratively fit a crystal layout template that includes the crystal numbering pattern. Starting from a region of stability, Gaussians are individually fit to data corresponding to crystal locations while simultaneously updating a TPS for predicting future Gaussian locations at the edge of a region of interest that grows as individual Gaussians converge to crystal locations. The algorithm was tested with flood image data collected from 16 detector modules, each consisting of a 409 crystal dual-layer offset LYSO crystal array readout by a 32 pixel SiPM array. For these detector flood images, depending on user defined input parameters, the algorithm runtime ranged between 17.5-82.5 s per detector on a single core of an Intel i7 processor. The method maintained an accuracy above 99.8% across all tests, with the majority of errors being localized to error prone corner regions. This method can be easily extended for use with other detector types through adjustment of the initial

  1. An algorithm for automatic crystal identification in pixelated scintillation detectors using thin plate splines and Gaussian mixture models

    NASA Astrophysics Data System (ADS)

    Schellenberg, Graham; Stortz, Greg; Goertzen, Andrew L.

    2016-02-01

    A typical positron emission tomography detector is comprised of a scintillator crystal array coupled to a photodetector array or other position sensitive detector. Such detectors using light sharing to read out crystal elements require the creation of a crystal lookup table (CLUT) that maps the detector response to the crystal of interaction based on the x-y position of the event calculated through Anger-type logic. It is vital for system performance that these CLUTs be accurate so that the location of events can be accurately identified and so that crystal-specific corrections, such as energy windowing or time alignment, can be applied. While using manual segmentation of the flood image to create the CLUT is a simple and reliable approach, it is both tedious and time consuming for systems with large numbers of crystal elements. In this work we describe the development of an automated algorithm for CLUT generation that uses a Gaussian mixture model paired with thin plate splines (TPS) to iteratively fit a crystal layout template that includes the crystal numbering pattern. Starting from a region of stability, Gaussians are individually fit to data corresponding to crystal locations while simultaneously updating a TPS for predicting future Gaussian locations at the edge of a region of interest that grows as individual Gaussians converge to crystal locations. The algorithm was tested with flood image data collected from 16 detector modules, each consisting of a 409 crystal dual-layer offset LYSO crystal array readout by a 32 pixel SiPM array. For these detector flood images, depending on user defined input parameters, the algorithm runtime ranged between 17.5-82.5 s per detector on a single core of an Intel i7 processor. The method maintained an accuracy above 99.8% across all tests, with the majority of errors being localized to error prone corner regions. This method can be easily extended for use with other detector types through adjustment of the initial

  2. First look at the beam test results of the FPIX2 readout chip for the BTeV silicon pixel detector

    SciTech Connect

    Uplegger, L.; Appel, J.A.; Artuso, M.; Cardoso, G.; Cease, H.P.; Chiodini, G.; Christian, D.C.; Cinabro, D.A.; Coluccia, R.; Hoff, J.; Kwan, S.; Magni, S.; Mekkaoui, A.; Menasce, D.; Newsom, C.; Papavassiliou, V.; Schreiner, A.; Turqueti, M.A.; Yarema, R.; Wang, J.C.; /Fermilab /Syracuse U. /INFN, Lecce /Wayne State U. /INFN, Milan /Iowa U. /New Mexico State U.

    2004-11-01

    High energy and nuclear physics experiments need tracking devices with excellent spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is a technology able to meet these challenges. We report the first results of the BTeV silicon pixel detector beam test carried out at Fermilab in summer 2004. Tests were performed using a 120 GeV/c proton beam incident on a 6 planes pixel detector telescope. The last prototype developed for the BTeV experiment (FPIX2) is tested in the middle of the telescope. There is no external trigger and events were built using the time-stamp information provided by the readout chips.

  3. Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

    NASA Astrophysics Data System (ADS)

    Unno, Y.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Hanagaki, K.; Yajima, K.; Yamauchi, Y.; Hirose, M.; Homma, Y.; Jinnouchi, O.; Kimura, K.; Motohashi, K.; Sato, S.; Sawai, H.; Todome, K.; Yamaguchi, D.; Hara, K.; Sato, Kz.; Sato, Kj.; Hagihara, M.; Iwabuchi, S.

    2016-09-01

    We have developed n+-in-p pixel sensors to obtain highly radiation tolerant sensors for extremely high radiation environments such as those found at the high-luminosity LHC. We have designed novel pixel structures to eliminate the sources of efficiency loss under the bias rails after irradiation by removing the bias rail out of the boundary region and routing the bias resistors inside the area of the pixel electrodes. After irradiation by protons with the fluence of approximately 3 ×1015neq /cm2, the pixel structure with the polysilicon bias resistor and the bias rails removed far away from the boundary shows an efficiency loss of < 0.5 % per pixel at the boundary region, which is as efficient as the pixel structure without a biasing structure. The pixel structure with the bias rails at the boundary and the widened p-stop's underneath the bias rail also exhibits an improved loss of approximately 1% per pixel at the boundary region. We have elucidated the physical mechanisms behind the efficiency loss under the bias rail with TCAD simulations. The efficiency loss is due to the interplay of the bias rail acting as a charge collecting electrode with the region of low electric field in the silicon near the surface at the boundary. The region acts as a "shield" for the electrode. After irradiation, the strong applied electric field nearly eliminates the region. The TCAD simulations have shown that wide p-stop and large Si-SiO2 interface charge (inversion layer, specifically) act to shield the weighting potential. The pixel sensor of the old design irradiated by γ-rays at 2.4 MGy is confirmed to exhibit only a slight efficiency loss at the boundary.

  4. Development of a CdTe pixel detector with a window comparator ASIC for high energy X-ray applications

    NASA Astrophysics Data System (ADS)

    Hirono, T.; Toyokawa, H.; Furukawa, Y.; Honma, T.; Ikeda, H.; Kawase, M.; Koganezawa, T.; Ohata, T.; Sato, M.; Sato, G.; Takagaki, M.; Takahashi, T.; Watanabe, S.

    2011-09-01

    We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500 μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25 μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.

  5. Characterization of a PET detector head based on continuous LYSO crystals and monolithic, 64-pixel silicon photomultiplier matrices.

    PubMed

    Llosá, G; Barrio, J; Lacasta, C; Bisogni, M G; Del Guerra, A; Marcatili, S; Barrillon, P; Bondil-Blin, S; de la Taille, C; Piemonte, C

    2010-12-01

    The characterization of a PET detector head based on continuous LYSO crystals and silicon photomultiplier (SiPM) arrays as photodetectors has been carried out for its use in the development of a small animal PET prototype. The detector heads are composed of a continuous crystal and a SiPM matrix with 64 pixels in a common substrate, fabricated specifically for this project. Three crystals of 12 mm × 12 mm × 5 mm size with different types of painting have been tested: white, black and black on the sides but white on the back of the crystal. The best energy resolution, obtained with the white crystal, is 16% FWHM. The detector response is linear up to 1275 keV. Tests with different position determination algorithms have been carried out with the three crystals. The spatial resolution obtained with the center of gravity algorithm is around 0.9 mm FWHM for the three crystals. As expected, the use of this algorithm results in the displacement of the reconstructed position toward the center of the crystal, more pronounced in the case of the white crystal. A maximum likelihood algorithm has been tested that can reconstruct correctly the interaction position of the photons also in the case of the white crystal.

  6. Prototype of a gigabit data transmitter in 65 nm CMOS for DEPFET pixel detectors at Belle-II

    NASA Astrophysics Data System (ADS)

    Kishishita, T.; Krüger, H.; Hemperek, T.; Lemarenko, M.; Koch, M.; Gronewald, M.; Wermes, N.

    2013-08-01

    This paper describes the recent development of a gigabit data transmitter for the Belle-II pixel detector (PXD). The PXD is an innermost detector currently under development for the upgraded KEK-B factory in Japan. The PXD consists of two layers of DEPFET sensor modules located at 1.8 and 2.2 cm radii. Each module is equipped with three different ASIC types mounted on the detector substrate with a flip-chip technique: (a) SWITCHER for generating steering signals for the DEPFET sensors, (b) DCD for digitizing the signal currents, and (c) DHP for performing data processing and sending the data off the module to the back-end data handling hybrid via ∼ 40 cm Kapton flex and 12-15 m twisted pair (TWP) cables. To meet the requirements of the PXD data transmission, a prototype of the DHP data transmitter has been developed in a 65-nm standard CMOS technology. The transmitter test chip consists of current-mode logic (CML) drivers and a phase-locked loop (PLL) which generates a clock signal for a 1.6 Gbit/s output data stream from an 80 cm reference clock. A programmable pre-emphasis circuit is also implemented in the CML driver to compensate signal losses in the long cable by shaping the transmitted pulse response. The jitter performance was measured as 25 ps (1 σ distribution) by connecting the chip with 38 cm flex and 10 m TWP cables.

  7. A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

    SciTech Connect

    Wright, M.; Millaud, J.; Nygren, D.

    1992-10-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application.

  8. Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time.

    PubMed

    Zhang, Qingteng; Dufresne, Eric M; Grybos, Pawel; Kmon, Piotr; Maj, Piotr; Narayanan, Suresh; Deptuch, Grzegorz W; Szczygiel, Robert; Sandy, Alec

    2016-05-01

    Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. The potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

  9. A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

    NASA Technical Reports Server (NTRS)

    Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

    2002-01-01

    Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

  10. A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

    NASA Technical Reports Server (NTRS)

    Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

    2001-01-01

    Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

  11. Resistivity measurements on the neutron irradiated detector grade silicon materials

    SciTech Connect

    Li, Zheng

    1993-11-01

    Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

  12. Development of Pattern Recognition Software for Tracks of Ionizing Radiation In Medipix2-Based (TimePix) Pixel Detector Devices

    NASA Astrophysics Data System (ADS)

    Vilalta, R.; Kuchibhotla, S.; Valerio, R.; Pinsky, L.

    2011-12-01

    The principal aim of our project is to develop an efficient pattern recognition tool for the automated identification and classification of tracks of ionizing radiation as measured by a TimePix version of the hybrid semiconductor Medipix2 pixel detector system. Such a software tool would have a number of applications including dosimeters to assess the risk of human exposure to radiation, and area monitors to characterize the general background radiation environment harmful to humans and electronic equipment. We are particularly interested in the development of the real-time analysis software needed to support an operational dosimeter that can assess the radiation environment during space missions. Our software development project makes use of data taken in beams of heavy ions at HIMAC (Heavy Ion Medical Accelerator Facility) in Chiba, Japan, including data from several different heavy ions with similar Linear Energy Transfers (LETs) for calibration purposes. We describe two modules of our pattern recognition tool: feature generation and classification. Our first module builds on a segmentation algorithm that identifies tracks from the pixel image assuming an approximately elliptical form that varies in size and degree of elongation based on multiple factors, including the particle species and angle of incidence. Determining the charge and energy of the particles creating each track is a particularly challenging task because different energy and charge incident particles can produce very similar patterns. Our classification module invokes different algorithms such as decision trees, support vector machines, and Bayesian classifiers.

  13. In situ micro-focused X-ray beam characterization with a lensless camera using a hybrid pixel detector.

    PubMed

    Kachatkou, Anton; Marchal, Julien; van Silfhout, Roelof

    2014-03-01

    Results of studies on micro-focused X-ray beam diagnostics using an X-ray beam imaging (XBI) instrument based on the idea of recording radiation scattered from a thin foil of a low-Z material with a lensless camera are reported. The XBI instrument captures magnified images of the scattering region within the foil as illuminated by the incident beam. These images contain information about beam size, beam position and beam intensity that is extracted during dedicated signal processing steps. In this work the use of the device with beams for which the beam size is significantly smaller than that of a single detector pixel is explored. The performance of the XBI device equipped with a state-of-the-art hybrid pixel X-ray imaging sensor is analysed. Compared with traditional methods such as slit edge or wire scanners, the XBI micro-focused beam characterization is significantly faster and does not interfere with on-going experiments. The challenges associated with measuring micrometre-sized beams are described and ways of optimizing the resolution of beam position and size measurements of the XBI instrument are discussed.

  14. Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

    SciTech Connect

    La Rosa, Alessandro; Boscardin, M.; Dalla Betta, G.-F.; Darbo, G.; Gemme, C.; Pernegger, H.; Piemonte, C.; Povoli, M.; Ronchin, S.; Zoboli, A.; Zorzi, N.; Bolle, E.; Borri, M.; Da Via, C.; Dong, S.; Fazio, S.; Grenier, P.; Grinstein, S.; Gjersdal, H.; Hansson, P.; Huegging, F.; /Bonn U. /SLAC /INFN, Turin /Turin U. /Oslo U. /Bergen U. /Oslo U. /Prague, Tech. U. /Bonn U. /SUNY, Stony Brook /Bonn U. /SLAC

    2012-04-04

    3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.

  15. SU-C-201-03: Coded Aperture Gamma-Ray Imaging Using Pixelated Semiconductor Detectors

    SciTech Connect

    Joshi, S; Kaye, W; Jaworski, J; He, Z

    2015-06-15

    Purpose: Improved localization of gamma-ray emissions from radiotracers is essential to the progress of nuclear medicine. Polaris is a portable, room-temperature operated gamma-ray imaging spectrometer composed of two 3×3 arrays of thick CdZnTe (CZT) detectors, which detect gammas between 30keV and 3MeV with energy resolution of <1% FWHM at 662keV. Compton imaging is used to map out source distributions in 4-pi space; however, is only effective above 300keV where Compton scatter is dominant. This work extends imaging to photoelectric energies (<300keV) using coded aperture imaging (CAI), which is essential for localization of Tc-99m (140keV). Methods: CAI, similar to the pinhole camera, relies on an attenuating mask, with open/closed elements, placed between the source and position-sensitive detectors. Partial attenuation of the source results in a “shadow” or count distribution that closely matches a portion of the mask pattern. Ideally, each source direction corresponds to a unique count distribution. Using backprojection reconstruction, the source direction is determined within the field of view. The knowledge of 3D position of interaction results in improved image quality. Results: Using a single array of detectors, a coded aperture mask, and multiple Co-57 (122keV) point sources, image reconstruction is performed in real-time, on an event-by-event basis, resulting in images with an angular resolution of ∼6 degrees. Although material nonuniformities contribute to image degradation, the superposition of images from individual detectors results in improved SNR. CAI was integrated with Compton imaging for a seamless transition between energy regimes. Conclusion: For the first time, CAI has been applied to thick, 3D position sensitive CZT detectors. Real-time, combined CAI and Compton imaging is performed using two 3×3 detector arrays, resulting in a source distribution in space. This system has been commercialized by H3D, Inc. and is being acquired for

  16. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    NASA Astrophysics Data System (ADS)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  17. Enhancing spatial resolution of (18)F positron imaging with the Timepix detector by classification of primary fired pixels using support vector machine.

    PubMed

    Wang, Qian; Liu, Zhen; Ziegler, Sibylle I; Shi, Kuangyu

    2015-07-01

    Position-sensitive positron cameras using silicon pixel detectors have been applied for some preclinical and intraoperative clinical applications. However, the spatial resolution of a positron camera is limited by positron multiple scattering in the detector. An incident positron may fire a number of successive pixels on the imaging plane. It is still impossible to capture the primary fired pixel along a particle trajectory by hardware or to perceive the pixel firing sequence by direct observation. Here, we propose a novel data-driven method to improve the spatial resolution by classifying the primary pixels within the detector using support vector machine. A classification model is constructed by learning the features of positron trajectories based on Monte-Carlo simulations using Geant4. Topological and energy features of pixels fired by (18)F positrons were considered for the training and classification. After applying the classification model on measurements, the primary fired pixels of the positron tracks in the silicon detector were estimated. The method was tested and assessed for [(18)F]FDG imaging of an absorbing edge protocol and a leaf sample. The proposed method improved the spatial resolution from 154.6   ±   4.2 µm (energy weighted centroid approximation) to 132.3   ±   3.5 µm in the absorbing edge measurements. For the positron imaging of a leaf sample, the proposed method achieved lower root mean square error relative to phosphor plate imaging, and higher similarity with the reference optical image. The improvements of the preliminary results support further investigation of the proposed algorithm for the enhancement of positron imaging in clinical and preclinical applications.

  18. Enhancing spatial resolution of (18)F positron imaging with the Timepix detector by classification of primary fired pixels using support vector machine.

    PubMed

    Wang, Qian; Liu, Zhen; Ziegler, Sibylle I; Shi, Kuangyu

    2015-07-01

    Position-sensitive positron cameras using silicon pixel detectors have been applied for some preclinical and intraoperative clinical applications. However, the spatial resolution of a positron camera is limited by positron multiple scattering in the detector. An incident positron may fire a number of successive pixels on the imaging plane. It is still impossible to capture the primary fired pixel along a particle trajectory by hardware or to perceive the pixel firing sequence by direct observation. Here, we propose a novel data-driven method to improve the spatial resolution by classifying the primary pixels within the detector using support vector machine. A classification model is constructed by learning the features of positron trajectories based on Monte-Carlo simulations using Geant4. Topological and energy features of pixels fired by (18)F positrons were considered for the training and classification. After applying the classification model on measurements, the primary fired pixels of the positron tracks in the silicon detector were estimated. The method was tested and assessed for [(18)F]FDG imaging of an absorbing edge protocol and a leaf sample. The proposed method improved the spatial resolution from 154.6   ±   4.2 µm (energy weighted centroid approximation) to 132.3   ±   3.5 µm in the absorbing edge measurements. For the positron imaging of a leaf sample, the proposed method achieved lower root mean square error relative to phosphor plate imaging, and higher similarity with the reference optical image. The improvements of the preliminary results support further investigation of the proposed algorithm for the enhancement of positron imaging in clinical and preclinical applications. PMID:26086805

  19. Study of the signal response of the MÖNCH 25μm pitch hybrid pixel detector at different photon absorption depths

    NASA Astrophysics Data System (ADS)

    Cartier, S.; Bergamaschi, A.; Dinapoli, R.; Greiffenberg, D.; Johnson, I.; Jungmann-Smith, J. H.; Mezza, D.; Mozzanica, A.; Shi, X.; Tinti, G.; Schmitt, B.; Stampanoni, M.

    2015-03-01

    MÖNCH is a 25 μm pitch hybrid silicon pixel detector with a charge integrating analog read-out front-end in each pixel. The small pixel size brings new challenges in bump-bonding, power consumption and chip design. The MÖNCH02 prototype ASIC, manufactured in UMC 110 nm technology with a field of view of 4×4 mm2 and 160×160 pixels, has been characterized in the single photon regime, i.e. with less than one photon acquired per frame on average on a 3×3 pixel cluster. The low noise and small pixel size allow spatial interpolation with high resolution. Understanding charge sharing as a function of the photon absorption depth and sensor bias is a key for optimal processing of single photon data for high resolution imaging. To characterize the charge collection of the detector, the sensor was illuminated with a 20 keV photon beam in edge-on configuration at the SYRMEP beamline of Elettra. By slicing the beam by means of a 5 μm slit and scanning through the 320 μm silicon sensor depth, the charge collection is characterized as a function of the photon absorption depth for different sensor bias voltages.

  20. Algorithms for minimization of charge sharing effects in a hybrid pixel detector taking into account hardware limitations in deep submicron technology

    NASA Astrophysics Data System (ADS)

    Maj, P.; Baumbaugh, A.; Deptuch, G.; Grybos, P.; Szczygiel, R.

    2012-12-01

    Charge sharing is the main limitation of pixel detectors used in spectroscopic applications, noting that this applies to both time and amplitude/energy spectroscopy. Even though, charge sharing was the subject of many studies, there is still no ultimate solution which could be implemented in the hardware to suppress the negative effects of charge sharing. This is mainly because of strong demand on low power dissipation and small silicon area of a single pixel. The first solution of this problem was proposed by CERN and consequently it was implemented in the Medipix III chip. However, due to pixel-to-pixel threshold dispersions and some imperfections of the simplified algorithm, the hit allocation was not functioning properly. We are presenting novel algorithms which allow proper hit allocation even at the presence of charge sharing. They can be implemented in an integrated circuit using a deep submicron technology. In performed simulations, we assumed not only diffusive charge spread occurring in the course of charge drifting towards the electrodes but also limitations in the readout electronics, i.e. signal fluctuations due to noise and mismatch (gain and offsets). The simulations show that using, for example, a silicon pixel detector in the low X-ray energy range, we have been able to perform proper hit position identification and use the information from summing inter-pixel nodes for spectroscopy measurements.

  1. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-01-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event’s time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e− RMS at room temperature. PMID:24187382

  2. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    PubMed

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature.

  3. Evaluation of Origin Ensemble algorithm for image reconstruction for pixelated solid-state detectors with large number of channels

    NASA Astrophysics Data System (ADS)

    Kolstein, M.; De Lorenzo, G.; Mikhaylova, E.; Chmeissani, M.; Ariño, G.; Calderón, Y.; Ozsahin, I.; Uzun, D.

    2013-04-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated solid-state technology for nuclear medicine applications. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). For PET scanners, conventional algorithms like Filtered Back-Projection (FBP) and Ordered Subset Expectation Maximization (OSEM) are straightforward to use and give good results. However, FBP presents difficulties for detectors with limited angular coverage like PEM and Compton gamma cameras, whereas OSEM has an impractically large time and memory consumption for a Compton gamma camera with a large number of channels. In this article, the Origin Ensemble (OE) algorithm is evaluated as an alternative algorithm for image reconstruction. Monte Carlo simulations of the PET design are used to compare the performance of OE, FBP and OSEM in terms of the bias, variance and average mean squared error (MSE) image quality metrics. For the PEM and Compton camera designs, results obtained with OE are presented.

  4. Noninvasive, near-field terahertz imaging of hidden objects using a single-pixel detector.

    PubMed

    Stantchev, Rayko Ivanov; Sun, Baoqing; Hornett, Sam M; Hobson, Peter A; Gibson, Graham M; Padgett, Miles J; Hendry, Euan

    2016-06-01

    Terahertz (THz) imaging can see through otherwise opaque materials. However, because of the long wavelengths of THz radiation (λ = 400 μm at 0.75 THz), far-field THz imaging techniques suffer from low resolution compared to visible wavelengths. We demonstrate noninvasive, near-field THz imaging with subwavelength resolution. We project a time-varying, intense (>100 μJ/cm(2)) optical pattern onto a silicon wafer, which spatially modulates the transmission of synchronous pulse of THz radiation. An unknown object is placed on the hidden side of the silicon, and the far-field THz transmission corresponding to each mask is recorded by a single-element detector. Knowledge of the patterns and of the corresponding detector signal are combined to give an image of the object. Using this technique, we image a printed circuit board on the underside of a 115-μm-thick silicon wafer with ~100-μm (λ/4) resolution. With subwavelength resolution and the inherent sensitivity to local conductivity, it is possible to detect fissures in the circuitry wiring of a few micrometers in size. THz imaging systems of this type will have other uses too, where noninvasive measurement or imaging of concealed structures is necessary, such as in semiconductor manufacturing or in ex vivo bioimaging. PMID:27386577

  5. Noninvasive, near-field terahertz imaging of hidden objects using a single-pixel detector

    PubMed Central

    Stantchev, Rayko Ivanov; Sun, Baoqing; Hornett, Sam M.; Hobson, Peter A.; Gibson, Graham M.; Padgett, Miles J.; Hendry, Euan

    2016-01-01

    Terahertz (THz) imaging can see through otherwise opaque materials. However, because of the long wavelengths of THz radiation (λ = 400 μm at 0.75 THz), far-field THz imaging techniques suffer from low resolution compared to visible wavelengths. We demonstrate noninvasive, near-field THz imaging with subwavelength resolution. We project a time-varying, intense (>100 μJ/cm2) optical pattern onto a silicon wafer, which spatially modulates the transmission of synchronous pulse of THz radiation. An unknown object is placed on the hidden side of the silicon, and the far-field THz transmission corresponding to each mask is recorded by a single-element detector. Knowledge of the patterns and of the corresponding detector signal are combined to give an image of the object. Using this technique, we image a printed circuit board on the underside of a 115-μm-thick silicon wafer with ~100-μm (λ/4) resolution. With subwavelength resolution and the inherent sensitivity to local conductivity, it is possible to detect fissures in the circuitry wiring of a few micrometers in size. THz imaging systems of this type will have other uses too, where noninvasive measurement or imaging of concealed structures is necessary, such as in semiconductor manufacturing or in ex vivo bioimaging. PMID:27386577

  6. High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

    NASA Astrophysics Data System (ADS)

    Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

    2016-01-01

    State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

  7. Performance of thin pixel sensors irradiated up to a fluence of 1016 neq cm-2 and development of a new interconnection technology for the upgrade of the ATLAS pixel system

    NASA Astrophysics Data System (ADS)

    Macchiolo, A.; Andricek, L.; Beimforde, M.; Moser, H.-G.; Nisius, R.; Richter, R. H.; Weigell, P.

    2011-09-01

    A new pixel module concept is presented, where thin sensors and a novel vertical integration technique are combined. This R&D activity is carried out in view of the ATLAS pixel detector upgrades. A first set of n-in-p pixel sensors with active thicknesses of 75 and 150 μm has been produced using a thinning technique developed at the Max-Planck-Institut Halbleiterlabor (HLL). Charge Collection Efficiency measurements have been performed, yielding a higher CCE than expected from the present radiation damage models. The interconnection of thin n-in-p pixels to the FE-I3 ATLAS electronics is under way, exploiting the Solid Liquid Interdiffusion (SLID) technique developed by the Fraunhofer Institut EMFT. In addition, preliminary studies aimed at Inter-Chip-Vias (ICV) etching into the FE-I3 electronics are reported. ICVs will be used to route the signals vertically through the read-out chip, to newly created pads on the backside. This should serve as a proof of principle for future four-side tileable pixel assemblies, avoiding the cantilever presently needed in the chip for the wire bonding.

  8. Effects of irradiation of energetic heavy ions on digital pulse shape analysis with silicon detectors

    NASA Astrophysics Data System (ADS)

    Barlini, S.; Carboni, S.; Bardelli, L.; Le Neindre, N.; Bini, M.; Borderie, B.; Bougault, R.; Casini, G.; Edelbruck, P.; Olmi, A.; Pasquali, G.; Poggi, G.; Rivet, M. F.; Stefanini, A. A.; Baiocco, G.; Berjillos, R.; Bonnet, E.; Bruno, M.; Chbihi, A.; Cruceru, I.; Degerlier, M.; Dueñas, J. A.; Galichet, E.; Gramegna, F.; Kordyasz, A.; Kozik, T.; Kravchuk, V. L.; Lopez, O.; Marchi, T.; Martel, I.; Morelli, L.; Parlog, M.; Piantelli, S.; Petrascu, H.; Rosato, E.; Seredov, V.; Vient, E.; Vigilante, M.; Fazia Collaboration

    2013-04-01

    The next generation of 4π detector arrays for heavy ion studies will largely use Pulse Shape Analysis to push the performance of silicon detectors with respect to ion identification. Energy resolution and pulse shape identification capabilities of silicon detectors under prolonged irradiation by energetic heavy ions have thus become a major issue. In this framework, we have studied the effects of irradiation by energetic heavy ions on the response of neutron transmutation doped (nTD) silicon detectors. Sizeable effects on the amplitude and the risetime of the charge signal have been found for detectors irradiated with large fluences of stopped heavy ions, while much weaker effects were observed by punching-through ions. The robustness of ion identification based on digital pulse shape techniques has been evaluated.

  9. Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

    SciTech Connect

    Eremin, V.; Verbitskaya, E.; Li, Z.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

    1996-03-01

    Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP{sup +}-p-n{sup +} detectors. The PP{sup +}-p-n{sup +} detectors were used to simulate the PP{sup +}-n-n{sup +} detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified.

  10. Single-event upset tests on the readout electronics for the pixel detectors of the PANDA experiment

    NASA Astrophysics Data System (ADS)

    Mazza, G.; Balossino, I.; Calvo, D.; De Mori, F.; De Remigis, P.; Filippi, A.; Marcello, S.; Mignone, M.; Wheadon, R.; Zotti, L.; Candelori, A.; Mattiazzo, S.; Silvestrin, L.

    2014-01-01

    The Silicon Pixel Detector (SPD) of the future PANDA experiment is the closest one to the interaction point and therefore the sensor and its electronics are the most exposed to radiation. The Total Ionizing Dose (TID) issue has been addressed by the use of a deep-submicron technology (CMOS 0.13 μm) for the readout ASICs. While this technology is very effective in reducing radiation induced oxide damage, it is also more sensitive to Single Event Upset (SEU) effects due to their extremely reduced dimensions. This problem has to be addressed at the circuit level and generally leads to an area penalty. Several techniques have been proposed in literature with different trade-off between level of protection and cell size. A subset of these techniques has been implemented in the PANDA SPD ToPiX readout ASIC prototypes, ranging from DICE cells to triple redundancy. Two prototypes have been tested with different ion beams at the INFN-LNL facility in order to measure the SEU cross section. Comparative results of the SEU test will be shown, together with an analysis of the SEU tolerance of the various protection schemes and future plans for the SEU protection strategy which will be implemented in the next ToPiX prototype.

  11. The influence of sunlight irradiation on the characteristics of InGaAs detectors

    NASA Astrophysics Data System (ADS)

    Shao, Xiumei; Zhu, Yaoming; Li, Xue; Tang, Hengjing; Li, Tao; Gong, Haimei

    2014-10-01

    InGaAs ternary compound is suitable for detector applications in the shortwave infrared (SWIR) band. Due to the advantages of good stability, low cooling requirements and high detectivity, InGaAs detectors have been applied widely in the space remote sensing area. However, InGaAs detectors would be affected by strong sunlight direct irradiation in space application. In this paper, a mesa-type InGaAs detector with large sensitive area of diameter 5mm was designed based on InP/In0.53Ga0.47As/InP epitaxial material, which is lattice-matched to InP substrate. The InGaAs detectors were fabricated by ICP etching, and packaged in a Kovar shell. The relative spectral response is in the range of 0.9μm to 1.7μm. The mechanism of the sunlight direct irradiation on InGaAs detector performance was studied. The sunlight were focalized by lens and irradiated directly on the detector. A piece of epitaxial material was investigated at the same time which was cleaved from a 2 inch wafer, same to the detector material. The real time testing was taken out to observe the output signal of the detector. After the irradiation experiment, the I-V curves and the relative response were tested immediately. The dark current of the detector increased temporarily, but come back to the original level after 24 hours. The response spectrum was nearly not affected. The XRD testing of the epitaxial material sample was carried out before and after sunlight direct irradiation. The sunlight irradiation causes thermal stress degradation. The thermal electrons were produced by the absorption of a great deal of visible light, leading to local enhancement of temperature and the lattice degeneration of the material.

  12. Measurements of UV irradiance within the area of one satellite pixel

    NASA Astrophysics Data System (ADS)

    Weihs, P.; Blumthaler, M.; Rieder, H. E.; Kreuter, A.; Simic, S.; Laube, W.; Schmalwieser, A. W.; Wagner, J. E.; Tanskanen, A.

    2008-09-01

    A measurement campaign was performed in the region of Vienna and its surroundings from May to July 2007. Within the scope of this campaign erythemal UV was measured at six ground stations within a radius of 30 km. First, the homogeneity of the UV levels within the area of one satellite pixel was studied. Second, the ground UV was compared to ground UV retrieved by the ozone monitoring instrument (OMI) onboard the NASA EOS Aura Spacecraft. During clear-sky conditions the mean bias between erythemal UV measured by the different stations was within the measurement uncertainty of ±5%. Short term fluctuations of UV between the stations were below 3% within a radius of 20 km. For partly cloudy conditions and overcast conditions the discrepancy of instantaneous values between the stations is up to 200% or even higher. If averages of the UV index over longer time periods are compared the difference between the stations decreases strongly. The agreement is better than 20% within a distance of 10 km between the stations for 3 h averages. The comparison with OMI UV showed for clear-sky conditions higher satellite retrieved UV values by, on the average, approximately 15%. The ratio of OMI to ground measured UV lies between 0.9 and 1.5. and strongly depends on the aerosol optical depth. For partly cloudy and overcast conditions the OMI derived surface UV estimates show larger deviation from the ground-based reference data, and even bigger systematic positive bias. Here the ratio OMI to ground data lies between 0.5 and 4.5. The average difference between OMI and ground measurements is +24 to +37% for partly cloudy conditions and more than +50% for overcast conditions.

  13. Charge collection in Si detectors irradiated in situ at superfluid helium temperature

    NASA Astrophysics Data System (ADS)

    Verbitskaya, Elena; Eremin, Vladimir; Zabrodskii, Andrei; Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R.; Egorov, Nicolai; Härkönen, Jaakko

    2015-10-01

    Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×1016 p/cm2. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment.

  14. Realistic PET Monte Carlo Simulation With Pixelated Block Detectors, Light Sharing, Random Coincidences and Dead-Time Modeling.

    PubMed

    Guérin, Bastein; Fakhri, Georges El

    2008-01-01

    We have developed and validated a realistic simulation of random coincidences, pixelated block detectors, light sharing among crystal elements and dead-time in 2D and 3D positron emission tomography (PET) imaging based on the SimSET Monte Carlo simulation software. Our simulation was validated by comparison to a Monte Carlo transport code widely used for PET modeling, GATE, and to measurements made on a PET scanner. METHODS: We have modified the SimSET software to allow independent tracking of single photons in the object and septa while taking advantage of existing voxel based attenuation and activity distributions and validated importance sampling techniques implemented in SimSET. For each single photon interacting in the detector, the energy-weighted average of interaction points was computed, a blurring model applied to account for light sharing and the associated crystal identified. Detector dead-time was modeled in every block as a function of the local single rate using a variance reduction technique. Electronic dead-time was modeled for the whole scanner as a function of the prompt coincidences rate. Energy spectra predicted by our simulation were compared to GATE. NEMA NU-2 2001 performance tests were simulated with the new simulation as well as with SimSET and compared to measurements made on a Discovery ST (DST) camera. RESULTS: Errors in simulated spatial resolution (full width at half maximum, FWHM) were 5.5% (6.1%) in 2D (3D) with the new simulation, compared with 42.5% (38.2%) with SimSET. Simulated (measured) scatter fractions were 17.8% (21.3%) in 2D and 45.8% (45.2%) in 3D. Simulated and measured sensitivities agreed within 2.3 % in 2D and 3D for all planes and simulated and acquired count rate curves (including NEC) were within 12.7% in 2D in the [0: 80 kBq/cc] range and in 3D in the [0: 35 kBq/cc] range. The new simulation yielded significantly more realistic singles' and coincidences' spectra, spatial resolution, global sensitivity and lesion

  15. EXCALIBUR: a small-pixel photon counting area detector for coherent X-ray diffraction - Front-end design, fabrication and characterisation

    NASA Astrophysics Data System (ADS)

    Marchal, J.; Horswell, I.; Willis, B.; Plackett, R.; Gimenez, E. N.; Spiers, J.; Ballard, D.; Booker, P.; Thompson, J. A.; Gibbons, P.; Burge, S. R.; Nicholls, T.; Lipp, J.; Tartoni, N.

    2013-03-01

    Coherent X-ray diffraction experiments on synchrotron X-ray beamlines require detectors with high spatial resolution and large detection area. The read-out chip developed by the MEDIPIX3 collaboration offers a small pixel size of 55 microns resulting in a very high spatial resolution when coupled to a direct X-ray conversion segmented silicon sensor. MEDIPIX3 assemblies present also the advantages of hybrid pixel detectors working in single photon counting mode: noiseless imaging, large dynamic range, extremely high frame rate. The EXCALIBUR detector is under development for the X-ray Coherence and Imaging Beamline I13 of the Diamond Light Source. This new detector consists of three modules, each with 16 MEDIPIX3 chips which can be read-out at 100 frames per second in continuous mode or 1000 frames per second in burst mode. In each module, the sensor is a large single silicon die covering 2 rows of 8 individual MEDIPIX3 read-out chips and provides a continuous active detection region within a module. Each module includes 1 million solder bumps connecting the 55 microns pixels of the silicon sensor to the 55 microns pixels of the 16 MEDIPIX3 read-out chips. The detection area of the 3-module EXCALIBUR detector is 115 mm × 100 mm with a small 6.8 mm wide inactive region between modules. Each detector module is connected to 2 FPGA read-out boards via a flexi-rigid circuit to allow a fully parallel read-out of the 16 MEDIPIX3 chips. The 6 FPGA read-out boards used in the EXCALIBUR detector are interfaced to 6 computing nodes via 10Gbit/s fibre-optic links to maintain the very high frame-rate capability. The standard suite of EPICS control software is used to operate the detector and to integrate it with the Diamond Light Source beamline software environment. This article describes the design, fabrication and characterisation of the MEDIPIX3-based modules composing the EXCALIBUR detector.

  16. Long term instability in the defect assembly in irradiated high resistivity silicon detectors

    SciTech Connect

    Eremin, V.; Ivanov, A.; Verbitskaya, E.; Li, Z.; Schmidt, B.

    1996-05-01

    Different kinetic behavior has been revealed for the two types of irradiated high resistivity silicon detectors in the reactions of the interstitial carbon (C{sub i}) annealing and the formation of the C{sub i}-O{sub i} complex. In the detectors with an increased oxygen contents prolonged growth of the C{sub i}-O{sub i} complex concentration obeyed the second order reaction due to an additional source of C{sub i} atoms which were not detected by DLTS measurements. Transformation of carbon related defects has been analyzed concerning the long term instability of irradiated silicon detectors. 5 refs., 2 figs.

  17. Development of an X-ray pixel detector with multi-port charge-coupled device for X-ray free-electron laser experiments

    SciTech Connect

    Kameshima, Takashi; Ono, Shun; Kudo, Togo; Ozaki, Kyosuke; Kirihara, Yoichi; Kobayashi, Kazuo; Inubushi, Yuichi; Yabashi, Makina; Hatsui, Takaki; Horigome, Toshio; Holland, Andrew; Holland, Karen; Burt, David; Murao, Hajime

    2014-03-15

    This paper presents development of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) for X-ray Free-Electron laser experiments. The fabrication process of the CCD was selected based on the X-ray radiation hardness against the estimated annual dose of 1.6 × 10{sup 14} photon/mm{sup 2}. The sensor device was optimized by maximizing the full well capacity as high as 5 Me- within 50 μm square pixels while keeping the single photon detection capability for X-ray photons higher than 6 keV and a readout speed of 60 frames/s. The system development also included a detector system for the MPCCD sensor. This paper summarizes the performance, calibration methods, and operation status.

  18. Development of an X-ray pixel detector with multi-port charge-coupled device for X-ray free-electron laser experiments

    NASA Astrophysics Data System (ADS)

    Kameshima, Takashi; Ono, Shun; Kudo, Togo; Ozaki, Kyosuke; Kirihara, Yoichi; Kobayashi, Kazuo; Inubushi, Yuichi; Yabashi, Makina; Horigome, Toshio; Holland, Andrew; Holland, Karen; Burt, David; Murao, Hajime; Hatsui, Takaki

    2014-03-01

    This paper presents development of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) for X-ray Free-Electron laser experiments. The fabrication process of the CCD was selected based on the X-ray radiation hardness against the estimated annual dose of 1.6 × 1014 photon/mm2. The sensor device was optimized by maximizing the full well capacity as high as 5 Me- within 50 μm square pixels while keeping the single photon detection capability for X-ray photons higher than 6 keV and a readout speed of 60 frames/s. The system development also included a detector system for the MPCCD sensor. This paper summarizes the performance, calibration methods, and operation status.

  19. Bulk damage effects in irradiated silicon detectors due to clustered divacancies

    NASA Astrophysics Data System (ADS)

    Gill, K.; Hall, G.; MacEvoy, B.

    1997-07-01

    High resistivity silicon particle detectors will be used extensively in experiments at the future CERN Large Hadron Collider. The detectors will be exposed to particle fluences equivalent to ˜1014 (1 MeV neutrons)/cm2, causing significant atomic displacement damage. A model has been developed to estimate the evolution of defect concentrations and the electrical behavior of irradiated silicon detectors using Shockley-Read-Hall (SRH) semiconductor statistics. The observed increases in leakage current and doping concentration changes can be described well after 60Co-gamma irradiation but less well after fast neutron irradiation. A possible non-SRH mechanism is considered, based on the hypothesis of charge transfer between clustered divacancy defects in neutron damaged silicon detectors. This leads to a large enhancement over the SRH prediction for V2 acceptor state occupancy and carrier generation rate which may resolve the discrepancy between the model and neutron damage data.

  20. A setup for soft proton irradiation of X-ray detectors for future astronomical space missions

    NASA Astrophysics Data System (ADS)

    Diebold, Sebastian; Azzarello, Philipp; Del Monte, Ettore; Feroci, Marco; Jochum, Josef; Kendziorra, Eckhard; Perinati, Emanuele; Rachevski, Alexandre; Santangelo, Andrea; Tenzer, Christoph; Vacchi, Andrea; Zampa, Gianluigi; Zampa, Nicola

    2013-09-01

    Protons that are trapped in the Earth's magnetic field are one of the main threats to astronomical X-ray observatories. Soft protons, in the range from tens of keV up to a few MeV, impinging on silicon X-ray detectors can lead to a significant degradation of the detector performance. Especially in low earth orbits an enhancement of the soft proton flux has been found. A setup to irradiate detectors with soft protons has been constructed at the Van-de-Graaff accelerator of the Physikalisches Institut of the University of Tübingen. Key advantages are a high flux uniformity over a large area, to enable irradiations of large detectors, and a monitoring system for the applied fluence, the beam uniformity, and the spectrum, that allows testing of detector prototypes in early development phases, when readout electronics are not yet available. Two irradiation campaigns have been performed so far with this setup. The irradiated detectors are silicon drift detectors, designated for the use on-board the LOFT space mission. This paper gives a description of the experimental setup and the associated monitoring system.

  1. Color changes in CR-39 nuclear track detector by gamma and laser irradiation

    NASA Astrophysics Data System (ADS)

    Nouh, S. A.; Said, A. F.; Atta, M. R.; El-Melleegy, W. M.; El-Meniawy, S.

    2006-07-01

    A study of the effect of gamma and laser irradiation on the color changes of polyallyl diglycol (CR-39) solid-state nuclear track detector was performed. CR-39 detector samples were classified into two main groups. The first group was irradiated with gamma doses at levels between 20 and 300 kGy, whereas the second group was exposed to infrared laser radiation with energy fluences at levels between 0.71 and 8.53 J/cm(2) . The transmission of these samples in the wavelength range 300-2500 nm, as well as any color changes, was studied. Using the transmission data, both the tristimulus and the coordinate values of the Commission Internationale de l'Eclairage (CIE) LAB were calculated. Also, the color differences between the non-irradiated samples and those irradiated with different gamma or laser doses were calculated. The results indicate that the CR-39 detector acquires color changes under gamma or laser irradiation, but it has more response to color changes by gamma irradiation. In addition, structural property studies using infrared spectroscopy were performed. The results indicate that the irradiation of a CR-39 detector with gamma or laser radiations causes the cleavage of the carbonate linkage that can be attributed to the H abstraction from the backbone of the polymer, associated with the formation of CO 2 and OH with varying intensities.

  2. Simulation of the Expected Performance of a Seamless Scanner for Brain PET Based on Highly Pixelated CdTe Detectors

    PubMed Central

    Mikhaylova, Ekaterina; De Lorenzo, Gianluca; Chmeissani, Mokhtar; Kolstein, Machiel; Cañadas, Mario; Arce, Pedro; Calderón, Yonatan; Uzun, Dilber; Ariño, Gerard; Macias-Montero, José Gabriel; Martinez, Ricardo; Puigdengoles, Carles; Cabruja, Enric

    2014-01-01

    The aim of this work is the evaluation of the design for a nonconventional PET scanner, the voxel imaging PET (VIP), based on pixelated room-temperature CdTe detectors yielding a true 3-D impact point with a density of 450 channels cm3, for a total 6 336 000 channels in a seamless ring shaped volume. The system is simulated and evaluated following the prescriptions of the NEMA NU 2-2001 and the NEMA NU 4-2008 standards. Results show that the excellent energy resolution of the CdTe detectors (1.6% for 511 keV photons), together with the small voxel pitch (1×1×2 mm3), and the crack-free ring geometry, give the design the potential to overcome the current limitations of PET scanners and to approach the intrinsic image resolution limits set by physics. The VIP is expected to reach a competitive sensitivity and a superior signal purity with respect to values commonly quoted for state-of-the-art scintillating crystal PETs. The system can provide 14 cps/kBq with a scatter fraction of 3.95% and 21 cps/kBq with a scatter fraction of 0.73% according to NEMA NU 2-2001 and NEMA NU 4-2008, respectively. The calculated NEC curve has a peak value of 122 kcps at 5.3 kBq/mL for NEMA NU 2-2001 and 908 kcps at 1.6 MBq/mL for NEMA NU 4-2008. The proposed scanner can achieve an image resolution of ~ 1 mm full-width at half-maximum in all directions. The virtually noise-free data sample leads to direct positive impact on the quality of the reconstructed images. As a consequence, high-quality high-resolution images can be obtained with significantly lower number of events compared to conventional scanners. Overall, simulation results suggest the VIP scanner can be operated either at normal dose for fast scanning and high patient throughput, or at low dose to decrease the patient radioactivity exposure. The design evaluation presented in this work is driving the development and the optimization of a fully operative prototype to prove the feasibility of the VIP concept. PMID:24108750

  3. The Cryogenic AntiCoincidence Detector for the ATHENA X-IFU: Design Aspects by Geant4 Simulation and Preliminary Characterization of the New Single Pixel

    NASA Astrophysics Data System (ADS)

    Macculi, C.; Argan, A.; D'Andrea, M.; Lotti, S.; Piro, L.; Biasotti, M.; Corsini, D.; Gatti, F.; Orlando, A.; Torrioli, G.

    2016-08-01

    The ATHENA observatory is the second large-class ESA mission, in the context of the Cosmic Vision 2015-2025, scheduled to be launched on 2028 at L2 orbit. One of the two planned focal plane instruments is the X-ray Integral Field Unit (X-IFU), which will be able to perform simultaneous high-grade energy spectroscopy and imaging over the 5 arcmin FoV by means of a kilo-pixel array of transition-edge sensor (TES) microcalorimeters, coupled to a high-quality X-ray optics. The X-IFU sensitivity is degraded by the particle background, induced by primary protons of both solar and cosmic rays' origin and secondary electrons. A Cryogenic AntiCoincidence (CryoAC) TES-based detector, located <1 mm below the TES array, will allow the mission to reach the background level that enables its scientific goals. The CryoAC is a 4-pixel detector made of Silicon absorbers sensed by Iridium TESs. We currently achieve a TRL = 3-4 at the single-pixel level. We have designed and developed two further prototypes in order to reach TRL = 4. The design of the CryoAC has been also optimized using the Geant4 simulation tool. Here we will describe some results from the Geant4 simulations performed to optimize the design and preliminary test results from the first of the two detectors, 1 cm2 area, made of 65 Ir TESs.

  4. Development of a large pixel, spectrally optimized, pinned photodiode/interline charge coupled device (CCD) detector for the Earth Observing System (EOS)/Moderate-Resolution Imaging Spectrometer-Tilt (MODIS-T) instrument

    NASA Technical Reports Server (NTRS)

    Ewin, Audrey J.; Jhabvala, Murzy; Shu, Peter K.

    1991-01-01

    A pinned photodiode/interline CCD Detector Array is under development for the EOS/MODIS-T project. Outstanding features of the device include large pixels, spectrally optimized fill factors, and blooming protection. The detector has 30 spatial rows and 32 spectral columns. The device layout is split into two halves; each half has its own detector area, storage area, and output structure.

  5. Avalanche Effect in Si Heavily Irradiated Detectors: Physical Model and Perspectives for Application

    SciTech Connect

    Eremin V.; Li Z.; Verbitskaya, E.; Zabrodskii, A.; Harkonen, J.

    2011-05-07

    The model explaining an enhanced collected charge in detectors irradiated to 10{sup 15}-10{sup 16} n{sub eq}/cm{sup 2} is developed. This effect was first revealed in heavily irradiated n-on-p detectors operated at high bias voltage ranging from 900 to 1700 V. The model is based on the fundamental effect of carrier avalanche multiplication in the space charge region and in our case is extended with a consideration of p-n junctions with a high concentration of the deep levels. It is shown that the efficient trapping of free carriers from the bulk generation current to the deep levels of radiation induced defects leads to the stabilization of the irradiated detector operation in avalanche multiplication mode due to the reduction of the electric field at the junction. The charge collection efficiency and the detector reverse current dependences on the applied bias have been numerically simulated in this study and they well correlate to the recent experimental results of CERN RD50 collaboration. The developed model of enhanced collected charge predicts a controllable operation of heavily irradiated detectors that is promising for the detector application in the upcoming experiments in a high luminosity collider.

  6. Annealing studies of silicon microstrip detectors irradiated at high neutron fluences

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Balbuena, J. P.; García, C.; González, S.; Lacasta, C.; Lacuesta, V.; Lozano, M.; Martí i Garcia, S.; Pellegrini, G.; Ullán, M.

    2008-06-01

    Silicon p-type detectors are being investigated for the development of radiation-tolerant detectors for the luminosity upgrade of the CERN large hadron collider (Super-LHC (sLHC)). Microstrip detectors have been fabricated by CNM-IMB with an n-side read-out on p-type high-resistivity float zone substrates. They have been irradiated with neutrons at the TRIGA Mark II nuclear reactor in Ljubljana. The irradiation fluxes match with the expected doses for the inner tracker at the sLHC (up to 10 16 equivalent 1 MeV neutrons cm -2). The macroscopic properties of the irradiated prototypes after irradiation were characterized at the IFIC-Valencia laboratory. The charge collection studies were carried out by means of a radioactive source setup as well as by an infrared laser illumination. The annealing behavior was studied in detail on a microstrip detector irradiated with a flux of 10 15 equivalent 1 MeV neutrons cm -2. Collected charge measurements were made after accelerated annealing times at 80 °C up to an equivalent annealing time of several years at room temperature. This note reports on the recorded results from the annealing of the irradiated p-type microstrip sensor.

  7. Liquid-xenon detector under the intensive pulse irradiation conditions

    NASA Astrophysics Data System (ADS)

    Kirsanov, M. A.

    2016-02-01

    The effect of intense pulsed irradiation on the operation of the liquid xenon spectrometer was studied. The ionization chamber filled with liquid xenon was irradiated by bremsstrahlung pulses of the microtron. The pulse repetition rate was 400 Hz. The absorbed dose ranged from 10-7 to 0.1 Gy per pulse. Stable operation of the liquid xenon spectrometer in the intervals between the pulses of the accelerator was shown for a long time.

  8. Basic approach to define signal-to-noise ratio for adjacent pixels for an uncooled microbolometer FPA detector

    NASA Astrophysics Data System (ADS)

    Kürüm, Ulas

    2013-09-01

    To define the ratio of the signal of the desired pixel and the noise of adjacent pixels, noise and signal sources are theoretically identified. While defining these values, atmospheric attenuation, losses at transmitting surfaces and wave characteristics of light are considered. For presentation purposes, a standard NATO target is chosen as source object. The model has been developed for a simple optical design which is intentionally left defective to better address effects of aberrations to signal to noise ratio of adjacent pixels especially caused by diffraction.

  9. Influence of electron irradiation on properties of semi-insulating GaAs detectors

    NASA Astrophysics Data System (ADS)

    Šagátová, Andrea; Zaťko, Bohumír; Sedlačková, Katarína; Pavlovič, Márius; Nečas, Vladimír

    2015-03-01

    The effects of electron beam irradiation on electrical and spectrometric properties of semi-insulating (SI) GaAs detectors were studied. The electric properties were monitored by reverse and forward current-voltage characteristics. In general, a breakdown voltage decrease with the dose was observed. However, some samples showed a local increase in the breakdown voltage at doses between 5 and 10 kGy. The detector spectrometric properties (the charge collection efficiency (CCE), the energy resolution and the detection efficiency) were evaluated from measured spectra of the 241Am radionuclide gamma source before and after electron irradiation. The CCE and energy resolution showed minor changes after irradiation. The detection efficiency noticed an initial increase (up to a dose of 5 kGy) followed by a permanent decrease. At 30 kGy, the overall degradation of detector functionality was observed with all samples.

  10. Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

    NASA Astrophysics Data System (ADS)

    Qiao, H.; Hu, W. D.; Li, T.; Li, X. Y.; Chang, Y.

    2016-09-01

    The study of electrical characteristics of mid-wavelength HgCdTe photodiodes irradiated by steady-state gamma rays has been carried out. The measurement of the current-voltage curves during irradiation revealed an abnormal variation of zero biased resistance R 0, and it didn't tend to change monotonically as observed in the case of post irradiation measurement. The irradiation effect was dominated by bulk effect inferred from the fitting calculations, and the generation-recombination current in the depletion region was drastically affected by gamma irradiation. Another irradiation effect was the linear increase of the series resistance with irradiation dosage which was related with the change of transportation parameters of carriers. The influence of hydrogenation on the gamma irradiation effects was also studied for comparison with the same batch of HgCdTe photodiodes, and it was found that R 0 for the hydrogenated devices showed similar change to those without hydrogenation. The series resistance, however, gave a totally different irradiation effect from the non-hydrogenated detectors and showed little change up to nearly 1 Mrad(Si) of gamma irradiation, which may be explained by the annihilation of hydrogen radicals with the defects caused by gamma irradiation.

  11. CdTe X-ray detectors under strong optical irradiation

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2014-11-17

    The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

  12. Probing the specific entropy produced in ultra-relativistic heavy-ion collisions with a silicon pixel multiplicity detector: a simulation study

    NASA Astrophysics Data System (ADS)

    Antinori, F.; Badalà, A.; Barbera, R.; Bloodworth, I. J.; Botje, M.; Caliandro, R.; Campbell, M.; Cantatore, E.; Carena, W.; Carrer, N.; de Haas, A. P.; Di Bari, D.; Di Liberto, S.; Divia, R.; Elia, D.; Evans, D.; Fanebust, K.; Fedorišin, J.; Feofilov, G. A.; Fini, R. A.; Ftáčnik, J.; Ghidini, B.; Grella, G.; Gulino, M.; Helstrup, H.; Holme, A. K.; Jacholkowski, A.; Jones, G. T.; Jovanovic, P.; Jusko, A.; Kamermans, R.; Kinson, J. B.; Klempt, W.; Knudson, K.; Kocper, B.; Kolojvari, A. A.; Králik, I.; Kuijer, P.; Lenti, V.; Lietava, R.; Løvhøiden, G.; Lupták, M.; Manzari, V.; Mazzoni, M. A.; Martinská, G.; Meddi, F.; Michalon, A.; Michalon-Mentzer, M. E.; Morando, M.; Nappi, E.; Navach, F.; Norman, P. I.; Palmeri, A.; Pappalardo, G. S.; Pastirčák, B.; Pellegrini, F.; Pišút, J.; Pišútová, N.; Posa, F.; Quercigh, E.; Riggi, F.; Romano, G.; Rohrich, D.; Šafařík, K.; Šándor, L.; Schillings, E.; Segato, G.; Snoeys, W.; Staroba, P.; Stolyarov, O. I.; Thompson, M.; Tomasicchio, G.; Torrieri, G. D.; Tsimbal, F. A.; Tulina, T. A.; Turrisi, R.; Tveter, T. S.; Urbán, J.; Valiev, F. F.; van den Brink, A.; van de Ven, P.; Vyvre, P. Vande; van Eijndhoven, N.; Vannucci, L.; Vascotto, A.; Baillie, O. Villalobos; Vinogradov, I.; Virgili, T.; Votruba, M. F.; Vrláková, J.; Závada, P.; NA57 Collaboration

    2000-09-01

    A simulation study of a silicon pixel multiplicity detector proposed for the NA57 experiment at CERN SPS has been carried out to evaluate its capability to measure both the total multiplicity and the net baryon content created in Pb+Pb collisions at 40 and 160 GeV/ c per nucleon in order to get information on the specific entropy produced in the reaction. A method of charge assignment is proposed and discussed in detail and the results of the simulation are presented. A benchmark of the method using computer-generated events is also performed.

  13. Image processing analysis of nuclear track parameters for CR-39 detector irradiated by thermal neutron

    NASA Astrophysics Data System (ADS)

    Al-Jobouri, Hussain A.; Rajab, Mustafa Y.

    2016-03-01

    CR-39 detector which covered with boric acid (H3Bo3) pellet was irradiated by thermal neutrons from (241Am - 9Be) source with activity 12Ci and neutron flux 105 n. cm-2. s-1. The irradiation times -TD for detector were 4h, 8h, 16h and 24h. Chemical etching solution for detector was sodium hydroxide NaOH, 6.25N with 45 min etching time and 60 C˚ temperature. Images of CR-39 detector after chemical etching were taken from digital camera which connected from optical microscope. MATLAB software version 7.0 was used to image processing. The outputs of image processing of MATLAB software were analyzed and found the following relationships: (a) The irradiation time -TD has behavior linear relationships with following nuclear track parameters: i) total track number - NT ii) maximum track number - MRD (relative to track diameter - DT) at response region range 2.5 µm to 4 µm iii) maximum track number - MD (without depending on track diameter - DT). (b) The irradiation time -TD has behavior logarithmic relationship with maximum track number - MA (without depending on track area - AT). The image processing technique principally track diameter - DT can be take into account to classification of α-particle emitters, In addition to the contribution of these technique in preparation of nano- filters and nano-membrane in nanotechnology fields.

  14. Commissioning of the read-out driver (ROD) card for the ATLAS IBL detector and upgrade studies for the pixel Layers 1 and 2

    NASA Astrophysics Data System (ADS)

    Balbi, G.; Bindi, M.; Falchieri, D.; Gabrielli, A.; Travaglini, R.; Chen, S.-P.; Hsu, S.-C.; Hauck, S.; Kugel, A.

    2014-11-01

    The higher luminosity that is expected for the LHC after future upgrades will require better performance by the data acquisition system, especially in terms of throughput. In particular, during the first shutdown of the LHC collider in 2013/14, the ATLAS Pixel Detector will be equipped with a fourth layer - the Insertable B-Layer or IBL - located at a radius smaller than the present three layers. Consequently, a new front end ASIC (FE-I4) was designed as well as a new off-detector chain. The latter is composed mainly of two 9U-VME cards called the Back-Of-Crate (BOC) and Read-Out Driver (ROD). The ROD is used for data and event formatting and for configuration and control of the overall read-out electronics. After some prototyping samples were completed, a pre-production batch of 5 ROD cards was delivered with the final layout. Actual production of another 15 ROD cards is ongoing in Fall 2013, and commissioning is scheduled in 2014. Altogether 14 cards are necessary for the 14 staves of the IBL detector, one additional card is required by the Diamond Beam Monitor (DBM), and additional spare ROD cards will be produced for a total of 20 boards. This paper describes some integration tests that were performed and our plan to test the production of the ROD cards. Slices of the IBL read-out chain have been instrumented, and ROD performance is verified on a test bench mimicking a small-sized final setup. This contribution will report also one view on the possible adoption of the IBL ROD for ATLAS Pixel Detector Layer 2 (firstly) and, possibly, in the future, for Layer 1.

  15. Quality control of the TSV multi-pixel photon counter arrays, and modules for the external plate of EndoTOF-PET ultrasound detector

    NASA Astrophysics Data System (ADS)

    Liu, Z.; Doroud, K.; Auffray, E.; Ben Mimoun Bel Hadj, F.; Cortinovis, D.; Garutti, E.; Lecoq, P.; Paganoni, M.; Pizzichemi, M.; Silenzi, A.; Xu, C.; Zvolsky, M.

    2015-07-01

    The aim of the EndoTOFPET-US collaboration is to develop a multi-modal imaging tool combining ultrasound with time-of-flight positron emission tomography into an endoscopic imaging device. One of the objectives of this scanner is to reach a coincidence time resolution of 200 ps full width at half maximum. The external detector is constructed with 256 matrices of 4×4 lutetium-yttrium oxyorthosilicate scintillating crystals, each with a size of 3.5 × 3.5 × 15mm3, coupled to 256 Hamamatsu TSV multi-pixel photon counter arrays (S12643-050CN). A full characterisation of these arrays has been performed in order to assure the quality of the arrays prior to the gluing to the crystal matrices. The breakdown voltage, dark count rate and single photon time resolution have been measured both at DESY and CERN. After this characterisation, the crystal matrices were glued to the multi-pixel photon counter arrays. The coincidence time resolution of each module has been measured at CERN using an ultra-fast amplifier-discriminator as the reference readout ASIC. Results of the characterisation of multi-pixel photon counter arrays and the crystal modules are presented here.

  16. Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

    NASA Astrophysics Data System (ADS)

    Khorsandi, Behrooz

    There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

  17. Characterization of a mammographic system based on single photon counting pixel arrays coupled to GaAs x-ray detectors

    SciTech Connect

    Amendolia, S. R.; Bisogni, M. G.; Delogu, P.; Fantacci, M. E.; Paternoster, G.; Rosso, V.; Stefanini, A.

    2009-04-15

    The authors report on the imaging capabilities of a mammographic system demonstrator based on GaAs pixel detectors operating in single photon counting (SPC) mode. The system imaging performances have been assessed by means of the transfer functions: The modulation transfer function (MTF), the normalized noise power spectrum, and the detective quantum efficiency (DQE) have been measured following the guidelines of the IEC 62220-1-2 protocol. The transfer function analysis has shown the high spatial resolution capabilities of the GaAs detectors. The MTF calculated at the Nyquist frequency (2.94 cycles/mm) is indeed 60%. The DQE, measured with a standard mammographic beam setup (Mo/Mo, 28 kVp, with 4 mm Al added filter) and calculated at zero frequency, is 46%. Aiming to further improve the system's image quality, the authors investigate the DQE limiting factors and show that they are mainly related to system engineering. For example, the authors show that optimization of the image equalization procedure increases the DQE(0) up to 74%, which is better than the DQE(0) of most clinical mammographic systems. The authors show how the high detection efficiency of GaAs detectors and the noise discrimination associated with the SPC technology allow optimizing the image quality in mammography. In conclusion, the authors propose technological solutions to exploit to the utmost the potentiality of GaAs detectors coupled to SPC electronics.

  18. STIS CCD Hot Pixel Annealing

    NASA Astrophysics Data System (ADS)

    Hernandez, Svea

    2013-10-01

    This purpose of this activity is to repair radiation induced hot pixel damage to theSTIS CCD by warming the CCD to the ambient instrument temperature and annealing radiation damaged pixels. Radiation damage creates hot pixels in the STIS CCD Detector. Many of these hot pixels can be repaired by warming the CCD from its normal operating temperature near-83 C to the ambient instrument temperature { +5 C} for several hours. The number of hot pixels repaired is a function of annealing temperature. The effectiveness of the CCD hot pixel annealing process is assessed by measuring the dark current behavior before and after annealing and by searching for any window contamination effects.

  19. Design and characterization of the ePix10k: a high dynamic range integrating pixel ASIC for LCLS detectors

    NASA Astrophysics Data System (ADS)

    Caragiulo, P.; Dragone, A.; Markovic, B.; Herbst, R.; Nishimura, K.; Reese, B.; Herrmann, S.; Hart, P.; Blaj, G.; Segal, J.; Tomada, A.; Hasi, J.; Carini, G.; Kenney, C.; Haller, G.

    2015-05-01

    ePix10k is a variant of a novel class of integrating pixel ASICs architectures optimized for the processing of signals in second generation LINAC Coherent Light Source (LCLS) X-Ray cameras. The ASIC is optimized for high dynamic range application requiring high spatial resolution and fast frame rates. ePix ASICs are based on a common platform composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog to digital converters per column. The ePix10k variant has 100um×100um pixels arranged in a 176×192 matrix, a resolution of 140e- r.m.s. and a signal range of 3.5pC (10k photons at 8keV). In its final version it will be able to sustain a frame rate of 2kHz. A first prototype has been fabricated and characterized. Performance in terms of noise, linearity, uniformity, cross-talk, together with preliminary measurements with bump bonded sensors are reported here.

  20. GOSSIP: A vertex detector combining a thin gas layer as signal generator with a CMOS readout pixel array

    NASA Astrophysics Data System (ADS)

    Campbell, M.; Heijne, E. H. M.; Llopart, X.; Colas, P.; Giganon, A.; Giomataris, Y.; Chefdeville, M.; Colijn, A. P.; Fornaini, A.; van der Graaf, H.; Kluit, P.; Timmermans, J.; Visschers, J. L.; Schmitz, J.

    2006-05-01

    A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed 50 μm above the chip, and electron multiplication occurred in the gap. With a He/isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90%. With this new readout technology for gas-filled detectors we recorded many image frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as δ-rays. With a gas layer thickness of only 1 mm, the device could be applied as vertex detector, outperforming all Si-based detectors.

  1. On line high dose static position monitoring by ionization chamber detector for industrial gamma irradiators.

    PubMed

    Rodrigues, Ary A; Vieira, Jose M; Hamada, Margarida M

    2010-01-01

    A 1 cm(3) cylindrical ionization chamber was developed to measure high doses on line during the sample irradiation in static position, in a (60)Co industrial plant. The developed ionization chamber showed to be suitable for use as a dosimeter on line. A good linearity of the detector was found between the dose and the accumulated charge, independently of the different dose rates caused by absorbing materials.

  2. Irradiation tests of prototype self-powered gamma and neutron detectors

    SciTech Connect

    Vermeeren, L.; Carcreff, H.

    2011-07-01

    In the framework of the SCK.CEN-CEA Joint Instrumentation Laboratory, we are developing and optimizing a self-powered detector for selective in-core monitoring of the gamma field. Several prototypes with bismuth emitters were developed and tested in a pure gamma field (the PAGURE gamma irradiation facility at CEA) and in mixed neutron and gamma fields (in the OSIRIS reactor at CEA and in the BR2 reactor at SCK.CEN). Detailed MCNP modelling was performed to calculate the gamma and neutron sensitivities. Apart from a few failing prototypes, all detectors showed equilibrium signals proportional to the gamma field with a good long-term stability (under irradiation during several weeks). A tubular geometry design was finally selected as the most appropriate for in-core gamma detection, coupling a larger sensitivity with better response characteristics. In the same experiment in BR2 six prototype Self-Powered Neutron Detectors (SPNDs) with continuous sheaths (i.e. without any weld between the sensitive part and the cable) were extensively tested: two SPNDs with Co emitter, two with V emitter and two with Rh emitters, with varying geometries. All detector responses were verified to be proportional to the reactor power. The prompt and delayed response contributions were quantified. The signal contributions due to the impact of gamma rays were experimentally determined. The evolution of the signals was continuously followed during the full irradiation period. The signal-to-noise level was observed to be well below 1% in typical irradiation conditions. The absolute neutron and gamma responses for all SPNDs are consistent. (authors)

  3. GaAs detectors irradiated by electrons at different dose rates

    NASA Astrophysics Data System (ADS)

    Sagatova, A.; Zatko, B.; Sedlackova, K.; Pavlovic, M.; Fulop, M.; Bohacek, P.; Necas, V.

    2014-12-01

    The radiation hardness of Semi-Insulating (SI) GaAs detectors against high-energy electrons was investigated. The detectors were irradiated by 5 MeV electrons. The influence of two irradiation parameters, the total absorbed dose (up to 24 kGy) and the applied dose rate (20, 40 and 80 kGy/h), on their spectrometric properties was studied. An 241Am gamma-ray source was used to evaluate the spectrometric properties. The applied dose has negatively affected the detector CCE (Charge Collection Efficiency) and has influenced also the energy resolution. Nevertheless, a global increase of detection efficiency with the dose was observed. Three different dose rates used during irradiation did not affect the CCE, but in the range of doses from 4 to 16 kGy an influence of the applied dose rate upon two other parameters was observed. With higher dose rates, a steeper increase in the detection efficiency and significant worsening of energy resolution were achieved.

  4. Towards a 10 μs, thin and high resolution pixelated CMOS sensor system for future vertex detectors

    NASA Astrophysics Data System (ADS)

    De Masi, R.; Amar-Youcef, S.; Baudot, J.; Bertolone, G.; Brogna, A.; Chon-Sen, N.; Claus, G.; Colledani, C.; Degerli, Y.; Deveaux, M.; Dorokhov, A.; Doziére, G.; Dulinski, W.; Gelin, M.; Goffe, M.; Fontaine, J. C.; Hu-Guo, Ch.; Himmi, A.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Müntz, C.; Orsini, F.; Santos, C.; Schrader, C.; Specht, M.; Stroth, J.; Valin, I.; Voutsinas, G.; Wagner, F. M.; Winter, M.

    2011-02-01

    The physics goals of many high energy experiments require a precise determination of decay vertices, imposing severe constraints on vertex detectors (readout speed, granularity, material budget,…). The IPHC-IRFU collaboration developed a sensor architecture to comply with these requirements. The first full scale CMOS sensor was realised and equips the reference planes of the EUDET beam telescope. Its architecture is being adapted to the needs of the STAR (RHIC) and CBM (FAIR) experiments. It is a promising candidate for the ILC experiments and the ALICE detector upgrade (LHC). A substantial improvement to the CMOS sensor performances, especially in terms of radiation hardness, should come from a new fabrication technology with depleted sensitive volume. A prototype sensor was fabricated to explore the benefits of the technology. The crucial system integration issue is also currently being addressed. In 2009 the PLUME collaboration was set up to investigate the feasibility and performances of a light double sided ladder equipped with CMOS sensors, aimed primarily for the ILC vertex detector but also of interest for other applications such as the CBM vertex detector.

  5. Studies for a 10 μs, thin, high resolution CMOS pixel sensor for future vertex detectors

    NASA Astrophysics Data System (ADS)

    Voutsinas, G.; Amar-Youcef, S.; Baudot, J.; Bertolone, G.; Brogna, A.; Chon-Sen, N.; Claus, G.; Colledani, C.; Dorokhov, A.; Dozière, G.; Dulinski, W.; Degerli, Y.; De Masi, R.; Deveaux, M.; Gelin, M.; Goffe, M.; Hu-Guo, Ch.; Himmi, A.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Müntz, C.; Orsini, F.; Santos, C.; Schrader, C.; Specht, M.; Stroth, J.; Valin, I.; Wagner, F. M.; Winter, M.

    2011-06-01

    Future high energy physics (HEP) experiments require detectors with unprecedented performances for track and vertex reconstruction. These requirements call for high precision sensors, with low material budget and short integration time. The development of CMOS sensors for HEP applications was initiated at IPHC Strasbourg more than 10 years ago, motivated by the needs for vertex detectors at the International Linear Collider (ILC) [R. Turchetta et al, NIM A 458 (2001) 677]. Since then several other applications emerged. The first real scale digital CMOS sensor MIMOSA26 equips Flavour Tracker at RHIC, as well as for the microvertex detector of the CBM experiment at FAIR. MIMOSA sensors may also offer attractive performances for the ALICE upgrade at LHC. This paper will demonstrate the substantial performance improvement of CMOS sensors based on a high resistivity epitaxial layer. First studies for integrating the sensors into a detector system will be addressed and finally the way to go to a 10 μs readout sensor will be discussed.

  6. A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single-photon detectors

    SciTech Connect

    Verma, V. B. Horansky, R.; Lita, A. E.; Mirin, R. P.; Nam, S. W.; Marsili, F.; Stern, J. A.; Shaw, M. D.

    2014-02-03

    We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event. As a proof-of-principle, we show results from a 2 × 2 array.

  7. Recent T980 Crystal Collimation Studies at the Tevatron Exploiting a Pixel Detector System and a Multi-Strip Crystal Array

    SciTech Connect

    Still, D.; Annala, G.E.; Carrigan, R.A.; Drozhdin, A.I.; Johnson, T.R.; Mokhov, N.V.; Previtali, V.; Rivera, R.; Shiltsev, V.; Zagel, J.; Zvoda, V.V.; / /CERN /INFN, Pisa / /

    2012-05-15

    With the shutdown of the Tevatron, the T-980 crystal collimation experiment at Fermilab has been successfully completed. Results of dedicated beam studies in May 2011 are described in this paper. For these studies, two multi-strip crystals were installed in the vertical goniometer and an O-shaped crystal installed in a horizontal goniometer. A two-plane CMS pixel detector was also installed in order to enhance the experiment with the capability to image the profile of crystal channeled or multiple volume reflected beam. The experiment successfully imaged channeled beam from a crystal for 980-GeV protons for the first time. This new enhanced hardware yielded impressive results. The performance and characterization of the crystals studied have been very reproducible over time and consistent with simulations.

  8. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    SciTech Connect

    Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  9. Measurement of X-ray spectra using a Lu2(SiO4)O-multipixel-photon detector with changes in the pixel number.

    PubMed

    Yamaguchi, Satoshi; Sato, Eiichi; Oda, Yasuyuki; Nakamura, Ryuji; Oikawa, Hirobumi; Yabuushi, Tomonori; Ariga, Hisanori; Ehara, Shigeru

    2015-09-01

    To measure X-ray spectra with high count rates, we developed a detector consisting of a Lu2(SiO4)O [LSO] crystal with a decay time of 40 ns and a multipixel photon counter (MPPC). The photocurrents flowing through the MPPC are converted into voltages and amplified by a high-speed current-voltage amplifier, and event pulses from the amplifier are sent to a multichannel analyzer to measure spectra. We used three MPPCs of 100, 400 and 1600 pixels/mm(2), and the MPPCs were driven under pre-Geiger mode at a temperature of 20 °C. At a tube voltage of 100 kV and a tube current of 5.0 μA, the maximum count rate was 12.8 kilo-counts per second. The event-pulse widths were 200 ns, and the energy resolution was 53% at 59.5 keV using a 100-pixel MPPC.

  10. First use of a high-sensitivity active pixel sensor array as a detector for electron microscopy

    NASA Astrophysics Data System (ADS)

    Xuong, Nguyen-Huu; Milazzo, Anna-Clare; LeBlanc, Philippe; Duttweiler, Fred; Bouwer, James; Peltier, Steve; Ellisman, Mark; Denes, Peter; Bieser, Fred; Matis, Howard S.; Wieman, Howard; Kleinfelder, Stuart

    2004-06-01

    There is an urgent need to replace film and CCD cameras as recording instruments for transmission electron microscopy (TEM). Film is too cumbersome to process and CCD cameras have low resolution, marginal to poor signal-to-noise ratio for single electron detection and high spatial distortion. To find a replacement device, we have tested a high sensitivity active pixel sensor (APS) array currently being developed for nuclear physics. The tests were done at 120 keV in a JEOL 1200 electron microscope. At this energy, each electron produced on average a signal-tonoise ratio about 20/1. The spatial resolution was also excellent with the full width at half maximum (FWHM) about 20 microns. Since it is very radiation tolerant and has almost no spatial distortion, the above tests showed that a high sensitivity CMOS APS array holds great promise as a direct detection device for electron microscopy.

  11. Towards a deep characterization of a 64-fold-pixelated position sensitive detector for a new {gamma}-scanning system of HPGe segmented detectors

    SciTech Connect

    Hernandez-Prieto, A.; Quintana, B.

    2011-07-01

    Characterization of the electrical response of the HPGe segmented detectors is one of the current goals for the Nuclear Physics community in order to perform {gamma}-ray tracking or even imaging with these detectors. For this purpose, scanning devices have to be developed to achieve the signal-position association with the highest precision. In this laboratory, a new scanning system, SALSA (Salamanca Lyso-based Scanning Array), consisting on a high spatial resolution {gamma} camera, is a under development. In this work the whole scanning system is presented and first results for the characterization of the {gamma} camera are shown. (authors)

  12. Damage effect on CMOS detector irradiated by single-pulse laser

    NASA Astrophysics Data System (ADS)

    Guo, Feng; Zhu, Rongzhen; Wang, Ang; Cheng, Xiang'ai

    2013-09-01

    Imaging systems are widespread observation tools used to fulfill various functions such as recognition, detection and identification. These devices such as CMOS and CCD can be damaged by laser. It is very important to study the damage mechanism of CMOS and CCD. Previous studies focused on the interference and damage of CCD. There were only a few researches on the interaction of CMOS and the laser. In this paper, using a 60ns, 1064 nm single-pulse laser to radiate the front illuminated CMOS detector, the typical experiment phenomena were observed and the corresponding energy density thresholds were measured. According to the experiment phenomena, hard damage process of CMOS can be divided into 3 stages. Based on the structure and working principle of CMOS, studying the damage mechanism of 3 stages by theoretical analysis, point damage was caused by the increase in leakage current due to structural defects resulting from thermal effects, half black line damage and black lines cross damage were caused by signal interruption due to that the device circuit fuses were cut. Enhancing the laser energy density, the damaged area expanded. Even if the laser energy density reached 1.95 J/cm2, black lines has covered most of the detector pixels, the detector still not completely lapsed, the undamaged area can imaging due to that pixels of CMOS were separated with each other. Experiments on CMOS by laser pulses at the wavelength of 1064 nm and the pulse duration in 25ps was carried out, then the thresholds with different pulse durations were measured and compared. Experiments on CMOS by fs pulsed laser at the frequency of 1 Hz, 10 Hz and 1000 Hz were carried out, respectively, the results showed that a high-repetition-rate laser was easier to damage CMOS compared to single-shot laser.

  13. Modifications induced by gamma irradiation to Makrofol polymer nuclear track detector

    PubMed Central

    Tayel, A.; Zaki, M.F.; El Basaty, A.B.; Hegazy, Tarek M.

    2014-01-01

    The aim of the present study was extended from obtaining information about the interaction of gamma rays with Makrofol DE 7-2 track detector to introduce the basis that can be used in concerning simple sensor for gamma irradiation and bio-engineering applications. Makrofol polymer samples were irradiated with 1.25 MeV 60Co gamma radiations at doses ranging from 20 to 1000 kG y. The modifications of irradiated samples so induced were analyzed using UV–vis spectrometry, photoluminescence spectroscopy, and the measurements of Vickers’ hardness. Moreover, the change in wettability of irradiated Makrofol was investigated by the contact angle determination of the distilled water. UV–vis spectroscopy shows a noticeable decrease in the energy band gap due to gamma irradiation. This decrease could be attributed to the appearance of a shift to UV spectra toward higher wavelength region after irradiation. Photoluminescence spectra reveal a remarkable change in the integrated photoluminescence intensity with increasing gamma doses, which may be resulted from some matrix disorder through the creation of some defected states in the irradiated polymer. The hardness was found to increase from 4.78 MPa for the unirradiated sample to 23.67 MPa for the highest gamma dose. The contact angle investigations show that the wettability of the modified samples increases with increasing the gamma doses. The result obtained from present investigation furnishes evidence that the gamma irradiations are a successful technique to modify the Makrofol DE 7-2 polymer properties to use it in suitable applications. PMID:25750755

  14. Miniature focal plane mass spectrometer with 1000-pixel modified-CCD detector array for direct ion measurement

    SciTech Connect

    Sinha, Mahadeva P.; Wadsworth, Mark

    2005-02-01

    A high performance, focal plane miniature mass spectrometer (MMS) of Mattauch-Herzog geometry with a CCD-based array detector for the direct and simultaneous measurements of different mass ions is described. Miniaturization (10 cmx5 cmx5 cm,395 g) was accomplished by using high-energy-product magnet material (Nd-B-Fe alloy) and a high permeability yoke material (V-Co-Fe Alloy) for the fabrication of the magnetic sector. The electrostatic sector was machined from a single piece of machinable ceramic (MACOR). All the components of the analyzer are mounted on a single plate, which facilitate their alignment and make the instrument rugged. The modified-CCD based ion detector array has 1000 elements (20 {mu}mx2 mm) and was invented in our laboratory. The photosensitive part of the CCD was replaced with a metal-oxide-semiconductor (MOS) capacitor for ion detection. The ion sensing capacitor plates are connected to the CCD gates that are operated in the fill-and spill mode providing a gain in the charge domain for the signal ions and minimizing various noises during measurements. The results reported in this article are the first application of this detector array for direct ion measurement and successfully prove the new technology. The MMS with the array detector can measure masses up to 250 u with a unit mass resolution and expected to possess a sensitivity of detecting {approx}5 ions. The above attributes make MMS suitable for space applications for isotopic and chemical analysis and also for field applications on earth.

  15. Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation

    NASA Astrophysics Data System (ADS)

    Casse, G.; Allport, P. P.; Martí i Garcia, S.; Lozano, M.; Turner, P. R.

    2004-12-01

    Silicon microstrip detectors with n-type implant read-out strips on FZ p-type bulk (n-in-p) show superior charge collection properties, after heavy irradiation, to the more standard p-strips in n-type silicon (p-in-n). It is also well established that oxygen-enriched n-type silicon substrates show better performance, in terms of degradation of the full depletion voltage after charged hadron irradiation, than the standard FZ silicon used for high energy physics detectors. Silicon microstrip detectors combining both the advantages of oxygenation and of n-strip read-out (n-in-n) have achieved high radiation tolerance to charged hadrons. The manufacturing of n-in-n detectors though requires double-sided processing, resulting in more complicated and expensive devices than standard p-in-n. A cheaper single-sided option, that still combines these advantages, is to use n-in-p devices. P-type FZ wafers have been oxygen-enriched by high temperature diffusion from an oxide layer and succesfully used to process miniature (1×1 cm 2) microstrip detectors. These detectors have been irradiated with 24 GeV/c protons in the CERN/PS T7 irradiation area up to ˜7.5×10 15 cm -2. We report results with these irradiated detectors in terms of the charge collection efficiency as a function of the applied bias voltage.

  16. Planar slim-edge pixel sensors for the ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    Altenheiner, S.; Goessling, C.; Jentzsch, J.; Klingenberg, R.; Lapsien, T.; Muenstermann, D.; Rummler, A.; Troska, G.; Wittig, T.

    2012-02-01

    The ATLAS detector at CERN is a general-purpose experiment at the Large Hadron Collider (LHC). The ATLAS Pixel Detector is the innermost tracking detector of ATLAS and requires a sufficient level of hermeticity to achieve superb track reconstruction performance. The current planar n-type pixel sensors feature a pixel matrix of n+-implantations which is (on the opposite p-side) surrounded by so-called guard rings to reduce the high voltage stepwise towards the cutting edge and an additional safety margin. Because of the inactive region around the active area, the sensor modules have been shingled on top of each other's edge which limits the thermal performance and adds complexity in the present detector. The first upgrade phase of the ATLAS pixel detector will consist of the insertable b-layer (IBL), an additional b-layer which will be inserted into the present detector in 2013. Several changes in the sensor design with respect to the existing detector had to be applied to comply with the IBL's specifications and are described in detail. A key issue for the ATLAS upgrades is a flat arrangement of the sensors. To maintain the required level of hermeticity in the detector, the inactive sensor edges have to be reduced to minimize the dead space between the adjacent detector modules. Unirradiated and irradiated sensors with the IBL design have been operated in test beams to study the efficiency performance in the sensor edge region and it was found that the inactive edge width could be reduced from 1100 μm to less than 250 μm.

  17. Note: Application of a pixel-array area detector to simultaneous single crystal x-ray diffraction and x-ray absorption spectroscopy measurements

    SciTech Connect

    Sun, Cheng-Jun Brewe, Dale L.; Heald, Steve M.; Zhang, Bangmin; Chen, Jing-Sheng; Chow, G. M.; Venkatesan, T.

    2014-04-15

    X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) are two main x-ray techniques in synchrotron radiation facilities. In this Note, we present an experimental setup capable of performing simultaneous XRD and XAS measurements by the application of a pixel-array area detector. For XRD, the momentum transfer in specular diffraction was measured by scanning the X-ray energy with fixed incoming and outgoing x-ray angles. By selecting a small fixed region of the detector to collect the XRD signal, the rest of the area was available for collecting the x-ray fluorescence for XAS measurements. The simultaneous measurement of XRD and X-ray absorption near edge structure for Pr{sub 0.67}Sr{sub 0.33}MnO{sub 3} film was demonstrated as a proof of principle for future time-resolved pump-probe measurements. A static sample makes it easy to maintain an accurate overlap of the X-ray spot and laser pump beam.

  18. High-flux ptychographic imaging using the new 55 µm-pixel detector ‘Lambda’ based on the Medipix3 readout chip

    SciTech Connect

    Wilke, R. N. Wallentin, J.; Osterhoff, M.; Pennicard, D.; Zozulya, A.; Sprung, M.; Salditt, T.

    2014-11-01

    The Large Area Medipix-Based Detector Array (Lambda) has been used in a ptychographic imaging experiment on solar-cell nanowires. By using a semi-transparent central stop, the high flux density provided by nano-focusing Kirkpatrick–Baez mirrors can be fully exploited for high-resolution phase reconstructions. Suitable detection systems that are capable of recording high photon count rates with single-photon detection are instrumental for coherent X-ray imaging. The new single-photon-counting pixel detector ‘Lambda’ has been tested in a ptychographic imaging experiment on solar-cell nanowires using Kirkpatrick–Baez-focused 13.8 keV X-rays. Taking advantage of the high count rate of the Lambda and dynamic range expansion by the semi-transparent central stop, a high-dynamic-range diffraction signal covering more than seven orders of magnitude has been recorded, which corresponds to a photon flux density of about 10{sup 5} photons nm{sup −2} s{sup −1} or a flux of ∼10{sup 10} photons s{sup −1} on the sample. By comparison with data taken without the semi-transparent central stop, an increase in resolution by a factor of 3–4 is determined: from about 125 nm to about 38 nm for the nanowire and from about 83 nm to about 21 nm for the illuminating wavefield.

  19. Gas amplifying hole structures with resistive position encoding: A new concept for a high rate imaging pixel detector

    NASA Astrophysics Data System (ADS)

    Sarvestani, A.; Besch, H. J.; Junk, M.; Pavel, N.; Sauer, N.; Stiehler, R.; Walenta, A. H.; Menk, R. H.

    1998-12-01

    Promising recent developments in gas amplifying hole structures (e.g. CAT, MICROMEGAS, GEM) were accompanied by a lack of appropriate readout structures. Here, a new hole structure is presented which is combined, for the first time, with a truely two-dimensional resistive position encoding device. The investigations with this prototype detector are focused on applications with high rate X-ray sources, including general studies of gas gain, energy resolution and rate capability. In addition, latest results of the imaging performance (uniformity, spatial resolution, etc.) will be reported.

  20. Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Campabadal, F.; Escobar, C.; García, C.; González, S.; Lacasta, C.; Lozano, M.; Martí i García, S.; Pellegrini, G.; Rafí, J. M.; Ullán, M.

    2007-12-01

    An upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10 35 cm -2 s -1 (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10 16 cm -2 (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported.

  1. Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences

    NASA Astrophysics Data System (ADS)

    Feigl, S.

    2014-03-01

    In this ATLAS upgrade R&D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with X-rays to 862 Mrad and neutrons up to 1016(1 MeV neq)/cm2 will be presented. Finally, a brief outlook on further development plans is given.

  2. High density pixel array

    NASA Technical Reports Server (NTRS)

    Wiener-Avnear, Eliezer (Inventor); McFall, James Earl (Inventor)

    2004-01-01

    A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

  3. Study of pixel damages in CCD cameras irradiated at the neutron tomography facility of IPEN-CNEN/SP

    NASA Astrophysics Data System (ADS)

    Pugliesi, R.; Andrade, M. L. G.; Dias, M. S.; Siqueira, P. T. D.; Pereira, M. A. S.

    2015-12-01

    A methodology to investigate damages in CCD sensors caused by radiation beams of neutron tomography facilities is proposed. This methodology has been developed in the facility installed at the nuclear research reactor of IPEN-CNEN/SP, and the damages were evaluated by counting of white spots in images. The damage production rate at the main camera position was evaluated to be in the range between 0.008 and 0.040 damages per second. For this range, only 4 to 20 CCD pixels are damaged per tomography, assuring high quality images for hundreds of tomographs. Since the present methodology is capable of quantifying the damage production rate for each type of radiation, it can also be used in other facilities to improve the radiation shielding close of the CCD sensors.

  4. Comparison of Direct Normal Irradiance Derived from Silicon and Thermopile Global Hemispherical Radiation Detectors: Preprint

    SciTech Connect

    Myers, D. R.

    2010-01-01

    Concentrating solar applications utilize direct normal irradiance (DNI) radiation, a measurement rarely available. The solar concentrator industry has begun to deploy numerous measurement stations to prospect for suitable system deployment sites. Rotating shadowband radiometers (RSR) using silicon photodiodes as detectors are typically deployed. This paper compares direct beam estimates from RSR to a total hemispherical measuring radiometer (SPN1) multiple fast thermopiles. These detectors simultaneously measure total and diffuse radiation from which DNI can be computed. Both the SPN1 and RSR-derived DNI are compared to DNI measured with thermopile pyrheliometers. Our comparison shows that the SPN1 radiometer DNI estimated uncertainty is somewhat greater than, and on the same order as, the RSR DNI estimates for DNI magnitudes useful to concentrator technologies.

  5. Irradiation of 4H-SiC UV detectors with heavy ions

    SciTech Connect

    Kalinina, E. V. Lebedev, A. A.; Bogdanova, E.; Berenquier, B.; Ottaviani, L.; Violina, G. N.; Skuratov, V. A.

    2015-04-15

    Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 10{sup 9} cm{sup −2}. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation.

  6. CMS Pixel Data Quality Monitoring

    NASA Astrophysics Data System (ADS)

    Merkel, Petra

    2010-05-01

    We present the CMS Pixel Data Quality Monitoring (DQM) system. The concept and architecture are discussed. The monitored quantities are introduced, and the methods on how to ensure that the detector takes high-quality data with large efficiency are explained. Finally we describe the automated data certification scheme, which is used to certify and classify the data from the Pixel detector for physics analyses.

  7. Study on the mechanism of a charge-coupled device detector irradiated by millisecond pulse laser under functional loss.

    PubMed

    Li, Mingxin; Jin, Guangyong; Tan, Yong; Guo, Ming; Zhu, Pengbo

    2016-02-20

    The damage mechanism of a CCD detector was studied by building an experimental system containing a millisecond pulse laser irradiating a CCD detector. The experimental results show that the damage on the CCD detector was mainly thermal damage, along with mechanical damage. A melting phenomenon was caused by the thermal damage, so that a crater was observed on the surface of the CCD detector. Caused by melting of the polysilicon electrodes and a temperature rise in the silicon dioxide, the shift register impedance values were sharply reduced. Most of the substrate clock signals were broken and disappeared due to melting of channels in the silicon substrate layer, which caused a functional loss for the CCD detector. The mechanical damage on the melting edge of the CCD detector created heave; the temperature gradient caused this damage. In this paper, the decrease in vertical shift register impedance values was consistent with previous test results. PMID:26906576

  8. Test beam campaigns for the CMS Phase I Upgrade pixel readout chip

    NASA Astrophysics Data System (ADS)

    Spannagel, S.; CMS Collaboration

    2014-12-01

    The current CMS silicon pixel detector as the innermost component of the CMS experiment is performing well at LHC design luminosity, but would be subject to severe inefficiencies at LHC peak luminosities of 2 × 1034 cm-2 s-1. Therefore, an upgrade of the CMS pixel detector is planned, including a new readout chip. The chip design comprises additional on-chip buffer cells as well as high-speed data links and low-threshold comparators in the pixel cells. With these changes the upgraded pixel detector will be able to maintain or even improve the efficiency of the current detector at the increased requirements imposed by high luminosities and pile-up. The effects of these design changes on e.g. position resolution and charge collection efficiency were studied in detail using a precision tracking telescope at the DESY test beam facilities. The high telescope track resolution enables precise studies of tracking efficiency, charge sharing and collection even within single pixel cells of the device under test. This publication focuses on the improved performance and capabilities of the new pixel readout chip and summarizes results from test beam campaigns with both unirradiated and irradiated devices. The functionality of the chip design with its improved charge threshold, redesigned data transmission and buffering scheme has been verified.

  9. Characterisation of radiation field for irradiation of biological samples at nuclear reactor-comparison of twin detector and recombination methods.

    PubMed

    Golnik, N; Gryziński, M A; Kowalska, M; Meronka, K; Tulik, P

    2014-10-01

    Central Laboratory for Radiological Protection is involved in achieving scientific project on biological dosimetry. The project includes irradiation of blood samples in radiation fields of nuclear reactor. A simple facility for irradiation of biological samples has been prepared at horizontal channel of the nuclear reactor MARIA in NCBJ in Poland. The radiation field, composed mainly of gamma radiation and thermal neutrons, has been characterised in terms of tissue kerma using twin-detector technique and recombination chambers.

  10. Smart pixels

    NASA Astrophysics Data System (ADS)

    Seitz, Peter

    2004-09-01

    Semiconductor technology progresses at a relentless pace, making it possible to provide image sensors and each pixel with an increasing amount of custom analog and digital functionality. As experience with such photosensor functionality grows, an increasing variety of modular building blocks become available for smart pixels, single-chip digital cameras and functional image sensors. Examples include a non-linear pixel response circuit for high-dynamic range imaging with a dynamic range exceeding 180 dB, low-noise amplifiers and avalanche-effect pixels for high-sensitivity detection performance approaching single-photoelectron resolution, lock-in pixels for optical time-of-flight range cameras with sub-centimeter distance resolution and in-pixel demodulation circuits for optical coherence tomography imaging. The future is seen in system-on-a-chip machine vision cameras ("seeing chips"), post-processing with non-silicon materials for the extension of the detection range to the X-ray, ultraviolet and infrared spectrum, the use of organic semiconductors for low-cost large-area photonic microsystems, as well as imaging of fields other than electromagnetic radiation.

  11. Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

    NASA Astrophysics Data System (ADS)

    Macchiolo, A.; Nisius, R.; Savic, N.; Terzo, S.

    2016-09-01

    Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 ×1015 neq /cm2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50×50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80°) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

  12. Detective quantum efficiency for photon-counting hybrid pixel detectors in the tender X-ray domain: application to Medipix3RX.

    PubMed

    Rinkel, Jean; Magalhães, Debora; Wagner, Franz; Meneau, Florian; Cesar Vicentin, Flavio

    2016-01-01

    Synchrotron-radiation-based X-ray imaging techniques using tender X-rays are facing a growing demand, in particular to probe the K absorption edges of low-Z elements. Here, a mathematical model has been developed for estimating the detective quantum efficiency (DQE) at zero spatial frequency in the tender X-ray energy range for photon-counting detectors by taking into account the influence of electronic noise. The experiments were carried out with a Medipix3RX ASIC bump-bonded to a 300 µm silicon sensor at the Soft X-ray Spectroscopy beamline (D04A-SXS) of the Brazilian Synchrotron Light Laboratory (LNLS, Campinas, Brazil). The results show that Medipix3RX can be used to develop new imaging modalities in the tender X-ray range for energies down to 2 keV. The efficiency and optimal DQE depend on the energy and flux of the photons. The optimal DQE values were found in the 7.9-8.6 keV photon energy range. The DQE deterioration for higher energies due to the lower absorption efficiency of the sensor and for lower energies due to the electronic noise has been quantified. The DQE for 3 keV photons and 1 × 10(4) photons pixel(-1) s(-1) is similar to that obtained with 19 keV photons. Based on our model, the use of Medipix3RX could be extended down to 2 keV which is crucial for coming applications in imaging techniques at modern synchrotron sources. PMID:26698065

  13. PIXEL PUSHER

    NASA Technical Reports Server (NTRS)

    Stanfill, D. F.

    1994-01-01

    Pixel Pusher is a Macintosh application used for viewing and performing minor enhancements on imagery. It will read image files in JPL's two primary image formats- VICAR and PDS - as well as the Macintosh PICT format. VICAR (NPO-18076) handles an array of image processing capabilities which may be used for a variety of applications including biomedical image processing, cartography, earth resources, and geological exploration. Pixel Pusher can also import VICAR format color lookup tables for viewing images in pseudocolor (256 colors). This program currently supports only eight bit images but will work on monitors with any number of colors. Arbitrarily large image files may be viewed in a normal Macintosh window. Color and contrast enhancement can be performed with a graphical "stretch" editor (as in contrast stretch). In addition, VICAR images may be saved as Macintosh PICT files for exporting into other Macintosh programs, and individual pixels can be queried to determine their locations and actual data values. Pixel Pusher is written in Symantec's Think C and was developed for use on a Macintosh SE30, LC, or II series computer running System Software 6.0.3 or later and 32 bit QuickDraw. Pixel Pusher will only run on a Macintosh which supports color (whether a color monitor is being used or not). The standard distribution medium for this program is a set of three 3.5 inch Macintosh format diskettes. The program price includes documentation. Pixel Pusher was developed in 1991 and is a copyrighted work with all copyright vested in NASA. Think C is a trademark of Symantec Corporation. Macintosh is a registered trademark of Apple Computer, Inc.

  14. Imaging properties of pixellated scintillators with deep pixels

    NASA Astrophysics Data System (ADS)

    Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

    2014-09-01

    We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10x10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm x 1mm x 20 mm pixels) made by Proteus, Inc. with similar 10x10 arrays of LSO:Ce and BGO (1mm x 1mm x 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10x10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors.

  15. Pixel Paradise

    NASA Technical Reports Server (NTRS)

    1998-01-01

    PixelVision, Inc., has developed a series of integrated imaging engines capable of high-resolution image capture at dynamic speeds. This technology was used originally at Jet Propulsion Laboratory in a series of imaging engines for a NASA mission to Pluto. By producing this integrated package, Charge-Coupled Device (CCD) technology has been made accessible to a wide range of users.

  16. The CMS pixel luminosity telescope

    NASA Astrophysics Data System (ADS)

    Kornmayer, A.

    2016-07-01

    The Pixel Luminosity Telescope (PLT) is a new complement to the CMS detector for the LHC Run II data taking period. It consists of eight 3-layer telescopes based on silicon pixel detectors that are placed around the beam pipe on each end of CMS viewing the interaction point at small angle. A fast 3-fold coincidence of the pixel planes in each telescope will provide a bunch-by-bunch measurement of the luminosity. Particle tracking allows collision products to be distinguished from beam background, provides a self-alignment of the detectors, and a continuous in-time monitoring of the efficiency of each telescope plane. The PLT is an independent luminometer, essential to enhance the robustness on the measurement of the delivered luminosity and to reduce its systematic uncertainties. This will allow to determine production cross-sections, and hence couplings, with high precision and to set more stringent limits on new particle production.

  17. Investigation of X-ray spectral response of D-T fusion produced neutron irradiated PIPS detectors for plasma X-ray diagnostics

    NASA Astrophysics Data System (ADS)

    Vigneshwara Raja, P.; Narasimha Murty, N. V. L.; Rao, C. V. S.; Abhangi, Mitul

    2015-10-01

    This paper describes the fusion-produced neutron irradiation induced changes in the X-ray spectral response of commercially available Passivated Implanted Planar Silicon (PIPS) detectors using the accelerator based D-T generator. After 14.1 MeV neutron irradiation up to a fluence of 3.6× 1010 n/cm2, the energy resolution (i.e. FWHM) of the detectors at room temperature is found to degrade by about 3.8 times that of the pre-irradiated value. From the X-ray spectral characteristics, it has been observed that the room temperature spectral response of PIPS detectors is too poor even at low neutron fluences. Irradiation is also carried out with Am-Be neutron source for studying the effect of scattered neutrons from the reactor walls on the detector performance. Comparative studies of the damage caused by 14.1 MeV neutrons and Am-Be source produced neutrons at the same neutron fluence are carried out by analyzing the irradiated detector characteristics. The degradation in the energy resolution of the detectors is attributed to the radiation induced changes in the detector leakage current. No considerable changes in the full depletion voltage and the effective doping concentration up to the neutron fluence of 3.6× 1010 n/cm2, are observed from the measured C-V characteristics. Partial recovery of the neutron irradiated detector characteristics is discussed.

  18. The INFN-FBK pixel R&D program for HL-LHC

    NASA Astrophysics Data System (ADS)

    Meschini, M.; Dalla Betta, G. F.; Boscardin, M.; Calderini, G.; Darbo, G.; Giacomini, G.; Messineo, A.; Ronchin, S.

    2016-09-01

    We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.

  19. Development of radiation hard CMOS active pixel sensors for HL-LHC

    NASA Astrophysics Data System (ADS)

    Pernegger, Heinz

    2016-07-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  20. Detectors

    DOEpatents

    Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan; Allander, Krag

    2002-01-01

    The apparatus and method provide techniques through which both alpha and beta emission determinations can be made simultaneously using a simple detector structure. The technique uses a beta detector covered in an electrically conducting material, the electrically conducting material discharging ions generated by alpha emissions, and as a consequence providing a measure of those alpha emissions. The technique also offers improved mountings for alpha detectors and other forms of detectors against vibration and the consequential effects vibration has on measurement accuracy.

  1. Stability of the Helical TomoTherapy Hi·Art II detector for treatment beam irradiations.

    PubMed

    Schombourg, Karin; Bochud, François; Moeckli, Raphaël

    2014-01-01

    The Hi·Art II Helical TomoTherapy (HT) unit is equipped with a built-in onboard MVCT detector used for patient imaging and beam monitoring. Our aim was to study the detector stability for treatment beam measurements. We studied the MVCT detector response with the 6 MV photon beam over time, throughout short-term (during an irradiation) and long-term (two times 50 days) periods. Our results show a coefficient of variation ≤ 1% for detector chambers inside the beam (excluding beam gradients) for short- and long-term response of the MVCT detector. Larger variations were observed in beam gradients and an influence of the X-ray target where degradation was found. The results assume that an 'air scan' procedure is performed daily to recalibrate the detector with the imaging beam. On short term, the detector response stability is comparable to other devices. Long-term measure- ments during two 50-day periods show a good reproducibility.  PMID:25493514

  2. Stability of the Helical TomoTherapy Hi·Art II detector for treatment beam irradiations.

    PubMed

    Schombourg, Karin; Bochud, François; Moeckli, Raphaël

    2014-01-01

    The Hi·Art II Helical TomoTherapy (HT) unit is equipped with a built-in onboard MVCT detector used for patient imaging and beam monitoring. Our aim was to study the detector stability for treatment beam measurements. We studied the MVCT detector response with the 6 MV photon beam over time, throughout short-term (during an irradiation) and long-term (two times 50 days) periods. Our results show a coefficient of variation ≤ 1% for detector chambers inside the beam (excluding beam gradients) for short- and long-term response of the MVCT detector. Larger variations were observed in beam gradients and an influence of the X-ray target where degradation was found. The results assume that an 'air scan' procedure is performed daily to recalibrate the detector with the imaging beam. On short term, the detector response stability is comparable to other devices. Long-term measure- ments during two 50-day periods show a good reproducibility. 

  3. Results from irradiation tests on D0 Run 2a silicon detectors at the Radiation Damage Facility at Fermilab

    SciTech Connect

    Gardner, J.; Cerber, C.; Ke, Z.; Korjanevsky, S.; Leflat, A.; Lehner, F.; Lipton, R.; Lackey, J.; Merkin, M.; Rapidis, P.; Rykalin, V.; Shabalina, E.; Spiegel, L.; Stutte, L.; Webber, B.; /Kansas U. /Kansas State U. /Illinois U., Chicago /Fermilab /Moscow State U. /Zurich U. /NICADD, DeKalb

    2006-03-01

    Several different spare modules of the D0 experiment Silicon Microstrip Tracker (SMT) have been irradiated at the Fermilab Booster Radiation Damage Facility (RDF). The total dose received was 2.1 MRads with a proton flux of {approx} 3 {center_dot} 10{sup 11} p/cm{sup 2} sec. The irradiation was carried out in steps of 0.3 or 0.6 MRad, with several days between the steps to allow for annealing and measurements. The leakage currents and depletion voltages of the devices increased with dose, as expected from bulk radiation damage. The double sided, double metal devices showed worse degradation than the less complex detectors.

  4. The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors.

    PubMed

    Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

    2016-01-01

    Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

  5. The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

    PubMed Central

    Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

    2016-01-01

    Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

  6. Dosimetric Characteristics of a Two-Dimensional Diode Array Detector Irradiated with Passively Scattered Proton Beams

    PubMed Central

    Liengsawangwong, Praimakorn; Sahoo, Nanayan; Ding, Xiaoning; Lii, MingFwu; Gillin, Michale T.; Zhu, Xiaorong Ronald

    2015-01-01

    Purpose: To evaluate the dosimetric characteristics of a two-dimensional (2D) diode array detector irradiated with passively scattered proton beams. Materials and Methods: A diode array detector, MapCHECK (Model 1175, Sun Nuclear, Melbourne, FL, USA) was characterized in passive-scattered proton beams. The relative sensitivity of the diodes and absolute dose calibration were determined using a 250 MeV beam. The pristine Bragg curves (PBCs) measured by MapCHECK diodes were compared with those of an ion chamber using a range shift method. The water-equivalent thickness (WET) of the diode array detector’s intrinsic buildup also was determined. The inverse square dependence, linearity, and other proton dosimetric quantities measured by MapCHECK were also compared with those of the ion chambers. The change in the absolute dose response of the MapCHECK as a function of accumulated radiation dose was used as an indicator of radiation damage to the diodes. 2D dose distribution with and without the compensator were measured and compared with the treatment planning system (TPS) calculations. Results: The WET of the MapCHECK diode’s buildup was determined to be 1.7 cm. The MapCHECK-measured PBC were virtually identical to those measured by a parallel-plate ion chamber for 160, 180, and 250 MeV proton beams. The inverse square results of the MapCHECK were within ±0.4% of the ion chamber results. The linearity of MapCHECK results was within 1% of those from the ion chamber as measured in the range between 10 and 300 MU. All other dosimetric quantities were within 1.3% of the ion chamber results. The 2D dose distributions for non-clinical fields without compensator and the patient treatment fields with the compensator were consistent with the TPS results. The absolute dose response of the MapCHECK was changed by 7.4% after an accumulated dose increased by 170 Gy. Conclusions: The MapCHECK is a convenient and useful tool for 2D dose distribution measurements using passively

  7. Development of thin edgeless silicon pixel sensors on epitaxial wafers

    NASA Astrophysics Data System (ADS)

    Boscardin, M.; Bosisio, L.; Contin, G.; Giacomini, G.; Manzari, V.; Orzan, G.; Rashevskaya, I.; Ronchin, S.; Zorzi, N.

    2014-09-01

    The paper reports on the development of novel p-on-n thin edgeless planar pixel sensors, compatible with ALICE front-end electronics, fabricated by FBK on epitaxial material. The focus of the activity is the minimization of the material budget required for hybrid pixel detectors. This goal has been addressed in two different stages. In the first one, planar pixel detectors fabricated on epitaxial wafers have been thinned and bonded to the readout chips. The second stage is described by the present paper: the `active edge' concept has been studied for the reduction of the dead area at the periphery of the devices. An overview of the key technological steps and of the electrical characterization of the fabricated sensors is given. In addition, the preliminary results on the static behavior of test sensors after neutron irradiation at different fluences (up to 2.5 × 1015 1 MeV-neq/cm2) are reported. The results demonstrate that these kinds of devices are a viable solution for the reduction of the material budget while maintaining the typical electrical characteristics expected from radiation silicon sensors.

  8. Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon X-ray detectors

    NASA Astrophysics Data System (ADS)

    Vigneshwara Raja, P.; Rao, C. V. S.; Narasimha Murty, N. V. L.

    2016-07-01

    This paper describes the gamma irradiation effects on the electrical characteristics of n-type float zone (FZ) silicon detectors by incorporating a 4-level 60Co-gamma radiation damage model in the commercial device simulator for plasma X-ray tomography diagnostics. In the simulations, a segmented n-type silicon detector (i.e. p+-n-n+ structure) is considered with varying substrate resistivity (ρ = 5.4, 2.5, and 0.3 kΩ cm). The simulation results have been validated with the reported experimental measurements carried out on similar device structures. The 60Co-gamma irradiation induced changes in the electrical characteristics of the detectors are analyzed up to the dose of 3500 Mrad. The possible gamma induced degradation in the X-ray response of the detectors is investigated from the changes in the effective doping concentration and the leakage current of the detectors. The survival of the gamma irradiated detectors is predicted from the simulation studies. The comparison between the 60Co-gamma and 14.1 MeV neutron irradiation effects (typical fusion environments) on silicon detectors is attempted.

  9. Stellar photometry with big pixels

    SciTech Connect

    Buonanno, R.; Iannicola, G.; European Southern Observatory, Garching )

    1989-03-01

    A new software for stellar photometry in crowded fields is presented. This software overcomes the limitations present in a traditional package like ROMAFOT when the pixel size of the detector is comparable to the scale length of point images. This is the case, for instance, with the Hubble Space Telescope-Wide Field Camera and, partially, with the Planetary Camera. The numerical solution presented here is compared to the technical solution of obtaining more exposures of the same field, each shifted by a fraction of pixel. This software will be available in MIDAS. 11 refs.

  10. Irradiation of 4''x4'' NaI(Tl) detector by the 14 MeV neutrons.

    PubMed

    Sudac, D; Valkovic, V

    2010-01-01

    Within the EURopean Illicit TRAfficking Countermeasures Kit (EURITRACK) project, a new Tagged Neutron Inspection System (TNIS) has been developed and installed in the Port of Rijeka in Croatia. The system was based on the examination of sea containers with the 14 MeV neutron beam. During the operation the characteristic gamma rays were produced and measured by several 5''x5''x10'' NaI(Tl) detectors. During this procedure some of the detectors were exposed to an intensive neutron beam radiation. It was necessary to check for possible radiation damage of the NaI(Tl) scintillator during the gamma detector selection phase of the project. The 4''x4'' NaI(Tl) detector was exposed to 14 MeV neutrons for 20 h. From the presented results on energy resolution and activation measurements it could be concluded that there are no significant differences in energy resolution before and after the irradiation by 4.7x10(11) of 14 MeV neutrons. The only problem could be the high level of medium and long term induced activity in the energy region below 2 MeV.

  11. Two CdZnTe Detector-Equipped Gamma-ray Spectrometers for Attribute Measurements on Irradiated Nuclear Fuel

    SciTech Connect

    Hartwell, John Kelvin; Winston, Philip Lon; Marts, Donna Jeanne; Moore-McAteer, Lisa Dawn; Taylor, Steven Cheney

    2003-04-01

    Some United States Department of Energy-owned spent fuel elements from foreign research reactors (FRRs) are presently being shipped from the reactor location to the US for storage at the Idaho National Engineering and Environmental Laboratory (INEEL). Two cadmium zinc telluride detector-based gamma-ray spectrometers have been developed to confirm the irradiation status of these fuels. One spectrometer is configured to operate underwater in the spent fuel pool of the shipping location, while the other is configured to interrogate elements on receipt in the dry transfer cell at the INEEL’s Interim Fuel Storage Facility (IFSF). Both units have been operationally tested at the INEEL.

  12. Development of a fast multi-line x-ray CT detector for NDT

    NASA Astrophysics Data System (ADS)

    Hofmann, T.; Nachtrab, F.; Schlechter, T.; Neubauer, H.; Mühlbauer, J.; Schröpfer, S.; Ernst, J.; Firsching, M.; Schweiger, T.; Oberst, M.; Meyer, A.; Uhlmann, N.

    2015-04-01

    Typical X-ray detectors for non-destructive testing (NDT) are line detectors or area detectors, like e.g. flat panel detectors. Multi-line detectors are currently only available in medical Computed Tomography (CT) scanners. Compared to flat panel detectors, line and multi-line detectors can achieve much higher frame rates. This allows time-resolved 3D CT scans of an object under investigation. Also, an improved image quality can be achieved due to reduced scattered radiation from object and detector themselves. Another benefit of line and multi-line detectors is that very wide detectors can be assembled easily, while flat panel detectors are usually limited to an imaging field with a size of approx. 40 × 40 cm2 at maximum. The big disadvantage of line detectors is the limited number of object slices that can be scanned simultaneously. This leads to long scan times for large objects. Volume scans with a multi-line detector are much faster, but with almost similar image quality. Due to the promising properties of multi-line detectors their application outside of medical CT would also be very interesting for NDT. However, medical CT multi-line detectors are optimized for the scanning of human bodies. Many non-medical applications require higher spatial resolutions and/or higher X-ray energies. For those non-medical applications we are developing a fast multi-line X-ray detector.In the scope of this work, we present the current state of the development of the novel detector, which includes several outstanding properties like an adjustable curved design for variable focus-detector-distances, conserving nearly uniform perpendicular irradiation over the entire detector width. Basis of the detector is a specifically designed, radiation hard CMOS imaging sensor with a pixel pitch of 200 μ m. Each pixel has an automatic in-pixel gain adjustment, which allows for both: a very high sensitivity and a wide dynamic range. The final detector is planned to have 256 lines of

  13. Novel silicon n-in-p pixel sensors for the future ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    La Rosa, A.; Gallrapp, C.; Macchiolo, A.; Nisius, R.; Pernegger, H.; Richter, R. H.; Weigell, P.

    2013-08-01

    In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10161-MeV neq cm-2, and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.

  14. Pixel Perfect

    SciTech Connect

    Perrine, Kenneth A.; Hopkins, Derek F.; Lamarche, Brian L.; Sowa, Marianne B.

    2005-09-01

    cubic warp. During image acquisitions, the cubic warp is evaluated by way of forward differencing. Unwanted pixelation artifacts are minimized by bilinear sampling. The resulting system is state-of-the-art for biological imaging. Precisely registered images enable the reliable use of FRET techniques. In addition, real-time image processing performance allows computed images to be fed back and displayed to scientists immediately, and the pipelined nature of the FPGA allows additional image processing algorithms to be incorporated into the system without slowing throughput.

  15. Preliminary demonstration of an IonCCD as an alternative pixelated anode for direct MCP readout in a compact MS-based detector.

    PubMed

    Hadjar, Omar; Fowler, William K; Kibelka, Gottfried; Schnute, William C

    2012-02-01

    We report on the preliminary testing of a new position-sensitive detector (PSD) by combining a microchannel plate (MCP) and a charge-sensitive pixilated anode with a direct readout based on charge-coupled detector (CCD) technology, which will be referred to as IonCCD (Hadjar et al. J Am Soc Mass Spectrom 22(4):612-623, 2011; Johnson et al. J Am Soc Mass Spectrom 22(8):1388-1394, 2011; Hadjar et al. J Am Soc Mass Spectrom 22(10):1872-1884, 2011). This work exploits the recently discovered electron detection capability of the IonCCD (Hadjar et al. J Am Soc Mass Spectrom 22(4):612-623, 2011), allowing it to be used directly behind an MC. This MCP-IonCCD configuration potentially obviates the need for electro-optical ion detector systems (EOIDs), which typically feature a relatively difficult-to-implement 5-kV power source as well as a phosphorus screen behind the MCP for conversion of electrons to photons prior to signal generation in a photosensitive CCD. Thus, the new system (MCP-IonCCD) has the potential to be smaller, simpler, more robust, and more cost efficient than EOID-based technologies in many applications. The use of the IonCCD as direct MCP readout anode, as opposed to its direct use as an ion detector, will benefit from the instant three-to-four-order-of-magnitude gain of the MCP with virtually no additional noise. The signal/noise gain can be used for either sensitivity or speed enhancement of the detector. The speed enhancement may motivate the development of faster IonCCD readout speeds (currently at 2.7 ms) to achieve the 2 kHz frame rate for which the IonCCD chip was designed, a must for transient signal applications. The presented detector exhibits clear potential not only as a trace analysis detector in scan-free mass spectrometry and electron spectroscopy but also as a compact detector for photon and particle imaging applications.

  16. Penrose Pixels for Super-Resolution.

    PubMed

    Ben-Ezra, M; Lin, Zhouchen; Wilburn, Bennett; Zhang, Wei

    2011-07-01

    We present a novel approach to reconstruction-based super-resolution that uses aperiodic pixel tilings, such as a Penrose tiling or a biological retina, for improved performance. To this aim, we develop a new variant of the well-known error back projection super-resolution algorithm that makes use of the exact detector model in its back projection operator for better accuracy. Pixels in our model can vary in shape and size, and there may be gaps between adjacent pixels. The algorithm applies equally well to periodic or aperiodic pixel tilings. We present analysis and extensive tests using synthetic and real images to show that our approach using aperiodic layouts substantially outperforms existing reconstruction-based algorithms for regular pixel arrays. We close with a discussion of the feasibility of manufacturing CMOS or CCD chips with pixels arranged in Penrose tilings.

  17. Electrical characterization of a radiation-hardened silicon pixel design for CMS

    NASA Astrophysics Data System (ADS)

    Xie, X. B.; Cho, H. S.; Liang, G. W.; Huang, W.; Li, Z.; Chien, C. Y.

    2002-01-01

    We have summarized our R&D on the radiation hardening and handling of high operating voltage for the CMS forward pixel detectors. More radiation-hardened silicon pixel sensors of configuration n +/n/p + with single-sided multi-guard ring structures have been developed and tested under the radiation environment expected at LHC. In the design, no guard ring is required on the n + side and guard rings on the p + side are always kept active before and after type inversion. The whole n + side is grounded and connected to readout-chip, which greatly simplifies detectors assembling and improves the stability of bump-bonded readout chip on the n + side. Samples had been irradiated to high fluence neutron and proton radiations to study the radiation hardness effects. Electrical characteristics such as leakage current, potential distributions over guard rings and full depletion voltage were measured under different temperatures.

  18. Low area 4-bit 5 MS/s flash-type digitizer for hybrid-pixel detectors - Design study in 180 nm and 40 nm CMOS

    NASA Astrophysics Data System (ADS)

    Otfinowski, Piotr; Grybos, Pawel

    2015-11-01

    We report on the design of a 4-bit flash ADC with dynamic offset correction dedicated to measurement systems based on a pixel architecture. The presented converter was manufactured in two CMOS technologies: widespread and economical 180 nm and modern 40 nm process. The designs are optimized for the lowest area occupancy resulting in chip areas of 160×55 μm2 and 35×25 μm2. The experimental results indicate integral nonlinearity of +0.35/-0.21 LSB and +0.28/-0.25 LSB and power consumption of 52 μW and 17 μW at 5 MS/s for the prototypes in 180 nm and 40 nm technologies respectively.

  19. Effects of defect pixel correction algorithms for x-ray detectors on image quality in planar projection and volumetric CT data sets

    NASA Astrophysics Data System (ADS)

    Kuttig, Jan; Steiding, Christian; Hupfer, Martin; Karolczak, Marek; Kolditz, Daniel

    2015-09-01

    In this study we compared various defect pixel correction methods for reducing artifact appearance within projection images used for computed tomography (CT) reconstructions. Defect pixel correction algorithms were examined with respect to their artifact behaviour within planar projection images as well as in volumetric CT reconstructions. We investigated four algorithms: nearest neighbour, linear and adaptive linear interpolation, and a frequency-selective spectral-domain approach. To characterise the quality of each algorithm in planar image data, we inserted line defects of varying widths and orientations into images. The structure preservation of each algorithm was analysed by corrupting and correcting the image of a slit phantom pattern and by evaluating its line spread function (LSF). The noise preservation was assessed by interpolating corrupted flat images and estimating the noise power spectrum (NPS) of the interpolated region. For the volumetric investigations, we examined the structure and noise preservation within a structured aluminium foam, a mid-contrast cone-beam phantom and a homogeneous Polyurethane (PUR) cylinder. The frequency-selective algorithm showed the best structure and noise preservation for planar data of the correction methods tested. For volumetric data it still showed the best noise preservation, whereas the structure preservation was outperformed by the linear interpolation. The frequency-selective spectral-domain approach in the correction of line defects is recommended for planar image data, but its abilities within high-contrast volumes are restricted. In that case, the application of a simple linear interpolation might be the better choice to correct line defects within projection images used for CT.

  20. Spitzer Secondary Eclipses of the Dense, Modestly-irradiated, Giant Exoplanet HAT-P-20b Using Pixel-level Decorrelation

    NASA Astrophysics Data System (ADS)

    Deming, Drake; Knutson, Heather; Kammer, Joshua; Fulton, Benjamin J.; Ingalls, James; Carey, Sean; Burrows, Adam; Fortney, Jonathan J.; Todorov, Kamen; Agol, Eric; Cowan, Nicolas; Desert, Jean-Michel; Fraine, Jonathan; Langton, Jonathan; Morley, Caroline; Showman, Adam P.

    2015-06-01

    HAT-P-20b is a giant metal-rich exoplanet orbiting a metal-rich star. We analyze two secondary eclipses of the planet in each of the 3.6 and 4.5 μm bands of Warm Spitzer. We have developed a simple, powerful, and radically different method to correct the intra-pixel effect for Warm Spitzer data, which we call pixel-level decorrelation (PLD). PLD corrects the intra-pixel effect very effectively, but without explicitly using—or even measuring—the fluctuations in the apparent position of the stellar image. We illustrate and validate PLD using synthetic and real data and comparing the results to previous analyses. PLD can significantly reduce or eliminate red noise in Spitzer secondary eclipse photometry, even for eclipses that have proven to be intractable using other methods. Our successful PLD analysis of four HAT-P-20b eclipses shows a best-fit blackbody temperature of 1134 ± 29 K, indicating inefficient longitudinal transfer of heat, but lacking evidence for strong molecular absorption. We find sufficient evidence for variability in the 4.5 μm band that the eclipses should be monitored at that wavelength by Spitzer, and this planet should be a high priority for James Webb Space Telescope spectroscopy. All four eclipses occur about 35 minutes after orbital phase 0.5, indicating a slightly eccentric orbit. A joint fit of the eclipse and transit times with extant RV data yields ecos ω =0.01352-0.00057+0.00054 and establishes the small eccentricity of the orbit to high statistical confidence. HAT-P-20b is another excellent candidate for orbital evolution via Kozai migration or other three-body mechanisms.

  1. High-contrast X-ray radiography using hybrid semiconductor pixel detectors with 1 mm thick Si sensor as a tool for monitoring liquids in natural building stones

    NASA Astrophysics Data System (ADS)

    Krejci, F.; Slavikova, M.; Zemlicka, J.; Jakubek, J.; Kotlik, P.

    2014-07-01

    For the preservation of buildings and other cultural heritage, the application of various conservation products such as consolidants or water repellents is often used. X-ray radiography utilizing semiconductor particle-counting detectors stands out as a promising tool in research of consolidants inside natural building stones. However, a clear visualization of consolidation products is often accomplished by doping with a contrast agent, which presents a limitation. This approach causes a higher attenuation for X-rays, but also alters the penetration ability of the original consolidation product. In this contribution, we focus on the application of Medipix type detectors newly equipped with a 1 mm thick Si sensor. This thicker sensor has enhanced detection efficiency leading to extraordinary sensitivity for monitoring consolidants and liquids in natural building stones even without any contrast agent. Consequently, methods for the direct monitoring of organosilicon consolidants and dynamic visualization of the water uptake in the Opuka stone using high-contrast X-ray radiography are demonstrated. The presented work demonstrates a significant improvement in the monitoring sensitivity of X-ray radiography in stone consolidation studies and also shows advantages of this detector configuration for X-ray radiography in general.

  2. Single-pixel polarimetric imaging.

    PubMed

    Durán, Vicente; Clemente, Pere; Fernández-Alonso, Mercedes; Tajahuerce, Enrique; Lancis, Jesús

    2012-03-01

    We present an optical system that performs Stokes polarimetric imaging with a single-pixel detector. This fact is possible by applying the theory of compressive sampling to the data acquired by a commercial polarimeter without spatial resolution. The measurement process is governed by a spatial light modulator, which sequentially generates a set of preprogrammed light intensity patterns. Experimental results are presented and discussed for an object that provides an inhomogeneous polarization distribution. PMID:22378406

  3. Tests of the radiation hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC (Superconducting Super Collider) under neutron, proton, and gamma irradiation

    SciTech Connect

    Ziock, H.J.; Milner, C.; Sommer, W.F. ); Carteglia, N.; DeWitt, J.; Dorfan, D.; Hubbard, B.; Leslie, J.; O'Shaughnessy, K.F.; Pitzl, D.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. . Inst. for Particle Physics); Ellison, J.A. ); Ferguson, P. ); Giubellino

    1990-01-01

    As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at UC Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC. 17 refs., 17 figs.

  4. Pixel multichip module development at Fermilab

    SciTech Connect

    Turqueti, M A; Cardoso, G; Andresen, J; Appel, J A; Christian, D C; Kwan, S W; Prosser, A; Uplegger, L

    2005-10-01

    At Fermilab, there is an ongoing pixel detector R&D effort for High Energy Physics with the objective of developing high performance vertex detectors suitable for the next generation of HEP experiments. The pixel module presented here is a direct result of work undertaken for the canceled BTeV experiment. It is a very mature piece of hardware, having many characteristics of high performance, low mass and radiation hardness driven by the requirements of the BTeV experiment. The detector presented in this paper consists of three basic devices; the readout integrated circuit (IC) FPIX2A [2][5], the pixel sensor (TESLA p-spray) [6] and the high density interconnect (HDI) flex circuit [1][3] that is capable of supporting eight readout ICs. The characterization of the pixel multichip module prototype as well as the baseline design of the eight chip pixel module and its capabilities are presented. These prototypes were characterized for threshold and noise dispersion. The bump-bonds of the pixel module were examined using an X-ray inspection system. Furthermore, the connectivity of the bump-bonds was tested using a radioactive source ({sup 90}Sr), while the absolute calibration of the modules was achieved using an X-ray source. This paper provides a view of the integration of the three components that together comprise the pixel multichip module.

  5. DC-DC powering for the CMS pixel upgrade

    NASA Astrophysics Data System (ADS)

    Feld, Lutz; Fleck, Martin; Friedrichs, Marcel; Hensch, Richard; Karpinski, Waclaw; Klein, Katja; Rittich, David; Sammet, Jan; Wlochal, Michael

    2013-12-01

    The CMS experiment plans to replace its silicon pixel detector with a new one with improved rate capability and an additional detection layer at the end of 2016. In order to cope with the increased number of detector modules the new pixel detector will be powered via DC-DC converters close to the sensitive detector volume. This paper reviews the DC-DC powering scheme and reports on the ongoing R&D program to develop converters for the pixel upgrade. Design choices are discussed and results from the electrical and thermal characterisation of converter prototypes are shown. An emphasis is put on system tests with up to 24 converters. The performance of pixel modules powered by DC-DC converters is compared to conventional powering. The integration of the DC-DC powering scheme into the pixel detector is described and system design issues are reviewed.

  6. Development activities of a CdTe/CdZnTe pixel detector for gamma-ray spectrometry with imaging and polarimetry capability in astrophysics

    NASA Astrophysics Data System (ADS)

    Gálvez, J. L.; Hernanz, M.; Álvarez, J. M.; Álvarez, L.; La Torre, M.; Caroli, E.; Lozano, M.; Pellegrini, G.; Ullán, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2013-05-01

    In the last few years we have been working on feasibility studies of future instruments in the gamma-ray range, from several keV up to a few MeV, in collaboration with other research institutes. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs), Pulsars, Active Galactic Nuclei (AGN).Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) are very attractive materials for gamma-ray detection, since they have already demonstrated their great performance onboard current space missions, such as IBIS/INTEGRAL and BAT/SWIFT, and future projects like ASIM onboard the ISS. However, the energy coverage of these instruments is limited up to a few hundred keV, and there has not been yet a dedicated instrument for polarimetry.Our research and development activities aim to study a gamma-ray imaging spectrometer in the MeV range based on CdTe detectors, suited either for the focal plane of a focusing mission or as a calorimeter for a Compton camera. In addition, our undergoing detector design is proposed as the baseline for the payload of a balloon-borne experiment dedicated to hard X- and soft gamma-ray polarimetry, currently under study and called CμSP (CZT μ-Spectrometer Polarimeter). Other research institutes such as INAF-IASF, DTU Space, LIP, INEM/CNR, CEA, are involved in this proposal. We will report on the main features of the prototype we are developing at the Institute of Space Sciences, a gamma-ray detector with imaging and polarimetry capabilities in order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution driven by the science.

  7. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    NASA Astrophysics Data System (ADS)

    Bronuzzi, J.; Mapelli, A.; Moll, M.; Sallese, J. M.

    2016-08-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set in full depletion. In a first step, Synopsys Sentaurus TCAD is used to evaluate the soundness of this technique for interface traps characterization such as it may happen in bonded interfaces. Next, an analytical model is developed in details to give a better insight into the physics behind the TCT for interface layers. Further, this can be used as a simple tool to evidence what are the relevant parameters influencing the TCT signal and to set the basis for preliminary characterizations.

  8. Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

    NASA Astrophysics Data System (ADS)

    Martyniuk, Piotr; Benyahia, Djalal; Kowalewski, Andrzej; Kubiszyn, Łukasz; Stępień, Dawid; Gawron, Waldemar; Rogalski, Antoni

    2016-05-01

    In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2 μm at 230 K. The 1.1 mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2 × 1010 cm Hz1/2/W at 230 K, under reverse bias 100 mV and ∼4 × 109 cm Hz1/2/W at 300 K, under 500 mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.

  9. X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors

    SciTech Connect

    Fraboni, B.; Pasquini, L.; Castaldini, A.; Cavallini, A.

    2009-11-01

    CdZnTe-based detectors possess unique properties as room-temperature x- and gamma-ray detectors. We report on the effects of x-ray irradiation on CdZnTe and CdTe:Cl detectors with increasing x-ray doses. We correlate the 'macroscopic' performance of the detectors, investigated by gamma-ray spectroscopy to the 'microscopic' effects induced by the impinging radiation, i.e., the defective states introduced in the crystal lattice. The electrical activity of the defects and their activation energy have been investigated by photo induced current transient spectroscopy and by space charge limited current analyses. We identify the x-ray dose that induces a significant degradation in the detector performance, and by cross-correlating the results obtained, we achieve a reliable estimate of the actual concentration of electrically active deep states and assess the potentiality of these experimental methods as tools for quantitative analyses of high resistivity materials.

  10. A CMOS Active Pixel Sensor for Charged Particle Detection

    SciTech Connect

    Matis, Howard S.; Bieser, Fred; Kleinfelder, Stuart; Rai, Gulshan; Retiere, Fabrice; Ritter, Hans George; Singh, Kunal; Wurzel, Samuel E.; Wieman, Howard; Yamamoto, Eugene

    2002-12-02

    Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector.

  11. Evaluation of testing strategies for the radiation tolerant ATLAS n +-in-n pixel sensor

    NASA Astrophysics Data System (ADS)

    Klaiber-Lodewigs, Jonas M.; Atlas Pixel Collaboration

    2003-10-01

    The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m2 with 1.1×10 8 read-out channels usable for a particle fluence up to 10 15 cm-2 ( 1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n +-in-n silicon pixel cell design with a standard cell size of 50×400 μm2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operation in the ATLAS experiment. The specific set of tests discussed in detail measures sensor depletion, interface generation velocity, p-spray dose and biasing by punch-through mechanism and is designed to give insights into effects of irradiation with ionizing particles.

  12. Minimizing the 1/r(2) perturbation for ideal fluence detectors in small source γ-irradiation fields.

    PubMed

    Bielajew, Alex F

    2014-08-21

    A technique for analyzing the effect of the geometrical shape of a source or a detector, using a quadrupole expansion, is described herein. It is shown that this method may be exploited to predict, optimize the geometry of a source, or a measurement device, and nearly eliminate, the departure from the 1/r(2) fall-off characteristic due to irradiation from small sources. We have investigated several simple shapes that have a vanishing Q2 quadrupole moment: a right circular cylinder with a diameter to depth ratio of √[2], a cone with a radius to height ratio of unity, and an oblate ellipsoid with a diameter to depth ratio of √[3/2]. These ideal shapes produce optimally small departures in a 1/r(2) field, nearly mimicking a point-like detector. We have also found a rotationally symmetric shape, intermediate to the other three, that has additionally, a vanishing Q4, the hexadecapole moment. This geometry further improves the 1/r(2)-perturbation characteristics and has an additional free parameter that may be adjusted to model the ideal cylinder, cone or oblate spheroid. PMID:25054611

  13. X-ray imaging and imaging spectroscopy of fusion plasmas and light-source experiments with spherical optics and pixel array detectors

    NASA Astrophysics Data System (ADS)

    Hill, K. W.; Bitter, M.; Delgado-Aparicio, L.; Pablant, N. A.; Beiersdorfer, P.; Sanchez del Rio, M.; Zhang, L.

    2012-10-01

    High resolution (λ/Δλ ~10,000) 1D imaging x-ray spectroscopy using a spherically bent crystal and a 2D hybrid pixelarray detector (PAD) is used world wide for Doppler measurements of ion-temperature (Ti) and plasma flow-velocityprofiles in magnetic confinement fusion (MCF) plasmas. Meter sized plasmas are diagnosed with cm spatial resolution and 10 ms time resolution. This concept can also be used as a diagnostic of small sources, such as inertial confinement fusion (ICF) plasmas and targets on x-ray light source beam lines, with spatial resolution of microns. A new concept of using matched pairs of spherically bent crystals for monochromatic stigmatic 2D x-ray imaging of mm sized sources offers the possibility of spatial resolution of microns and large solid angle, relative to that achieved with pinhole imaging. Other potential applications of the 2D imaging schemes include x-ray lithography and x-ray microscopy for biological and materials science research. Measurements from MFE plasmas, as well as laboratory experiments and ray tracing computations validating the 1D imaging spectroscopy and 2D x-ray imaging techniques will be presented.

  14. Cryogenic absolute radiometers as laboratory irradiance standards, remote sensing detectors, and pyroheliometers

    NASA Technical Reports Server (NTRS)

    Foukal, Peter V.; Hoyt, C.; Kochling, H.; Miller, P.

    1990-01-01

    The dramatic improvement in heat diffusivity of pure Cu at liquid-He temperatures makes possible very important advances in the absolute accuracy, reproducibility, sensitivity, and time constant of cryogenic electrical substitution radiometers (ESRs), relative to conventional ESRs. The design and characterization of a table-top cryogenic ESR now available for detector calibration work to the 0.01-percent level of absolute accuracy under laser illumination is discussed. A sensitive cryogenic ESR recently delivered to the NIST for radiometric calibrations of black bodies is also described, along with the design and testing of a very fast cryogenic ESR developed for NASA remote-sensing studies of the earth's radiation budget.

  15. Thermophysical properties and reaction kinetics of γ-irradiated poly allyl diglycol carbonates nuclear track detector

    NASA Astrophysics Data System (ADS)

    Elmaghraby, Elsayed K.; Seddik, Usama

    2015-07-01

    Kinetic thermogravimetric technique was used to study the effect of gamma irradiation on the poly allyl diglycol carbonates (PADC) within the dose range from 50 to ? Gy. The approach of Coats-Redfern was used to analyze the data. Results showed that low doses around 50 Gy make the polymer slightly more resistive to heat treatment. Higher radiation doses cause severe effects in the samples accompanied by the formation of lower molecular mass species and consequent crosslinking. Results support the domination of re-polymerization and crosslinking for the γ radiation interaction PADC at dose below about ? Gy, while the situation is inverted above ? Gy in which chain secession dominates.

  16. Pixel isolation of low dark-current large-format InAs/GaSb superlattice complementary barrier infrared detector focal plane arrays with high fill factor

    NASA Astrophysics Data System (ADS)

    Nguyen, Jean; Hill, Cory J.; Rafol, Don; Keo, Sam; Soibel, Alexander; Ting, David Z.-Y.; Mumolo, Jason; Liu, John; Gunapala, Sarath D.

    2011-01-01

    Low dark current and high fill factor are two crucial characteristics for the realization of the InAs/GaSb superlattice (SL) technology as third generation focal plane arrays (FPAs). Recent development proved high performance results for the complementary barrier infrared detector (CBIRD) design, and a high-quality etch technique is required to minimize surface leakage currents. We report on a n-CBIRD with 10.3 μm cutoff, exhibiting a responsivity of 1.7 A/W and dark current density of 1×10-5 A/cm2 at 77K under 0.2 V bias, without AR coating and without passivation. Results from four different mesa isolation techniques are compared on single element diodes: chemical wet etch using C4H6O6:H3PO4:H2O2:H2O, BCl3/Ar inductively coupled plasma (ICP), CH4/H2/Ar ICP, and CH4/H2/BCl3/Cl2/Ar ICP. The CH4/H2/BCl3/Cl2/Ar etched structures yielded more than 2.5 times improvement in dark current density and nearvertical sidewalls. Using this etching technique, we then implement a 1k x 1k p-CBIRD array with 11.5 μm cutoff and peak responsivity of 3 A/W. Operating at T = 80K, the array yielded a 81% fill factor with 98% operability and performance results of 21% quantum efficiency, 53 mK NE▵T, and NEI of 6.9×1013 photons/sec-cm2.

  17. Simulation of Charge Collection in Diamond Detectors Irradiated with Deuteron-Triton Neutron Sources

    SciTech Connect

    Milocco, Alberto; Trkov, Andrej; Pillon, Mario

    2011-12-13

    Diamond-based neutron spectrometers exhibit outstanding properties such as radiation hardness, low sensitivity to gamma rays, fast response and high-energy resolution. They represent a very promising application of diamonds for plasma diagnostics in fusion devices. The measured pulse height spectrum is obtained from the collection of helium and beryllium ions produced by the reactions on {sup 12}C. An original code is developed to simulate the production and the transport of charged particles inside the diamond detector. The ion transport methodology is based on the well-known TRIM code. The reactions of interest are triggered using the ENDF/B-VII.0 nuclear data for the neutron interactions on carbon. The model is implemented in the TALLYX subroutine of the MCNP5 and MCNPX codes. Measurements with diamond detectors in a {approx}14 MeV neutron field have been performed at the FNG (Rome, Italy) and IRMM (Geel, Belgium) facilities. The comparison of the experimental data with the simulations validates the proposed model.

  18. From hybrid to CMOS pixels ... a possibility for LHC's pixel future?

    NASA Astrophysics Data System (ADS)

    Wermes, N.

    2015-12-01

    Hybrid pixel detectors have been invented for the LHC to make tracking and vertexing possible at all in LHC's radiation intense environment. The LHC pixel detectors have meanwhile very successfully fulfilled their promises and R&D for the planned HL-LHC upgrade is in full swing, targeting even higher ionising doses and non-ionising fluences. In terms of rate and radiation tolerance hybrid pixels are unrivaled. But they have disadvantages as well, most notably material thickness, production complexity, and cost. Meanwhile also active pixel sensors (DEPFET, MAPS) have become real pixel detectors but they would by far not stand the rates and radiation faced from HL-LHC. New MAPS developments, so-called DMAPS (depleted MAPS) which are full CMOS-pixel structures with charge collection in a depleted region have come in the R&D focus for pixels at high rate/radiation levels. This goal can perhaps be realised exploiting HV technologies, high ohmic substrates and/or SOI based technologies. The paper covers the main ideas and some encouraging results from prototyping R&D, not hiding the difficulties.

  19. Effects of gamma irradiation on some chemicals using an NaI (Tl) detector

    NASA Astrophysics Data System (ADS)

    Bhosale, R. R.; Gaikwad, D. K.; Pawar, P. P.; Rode, M. N.

    2016-05-01

    The present work was carried out to find out the gamma ray shielding properties and to study the effects using an NaI (Tl) detector using radioactive sources 57Co, 133Ba, 137Cs, 54Mn, 60Co and 22Na at energies 122, 356, 511, 662, 840, 1170, 1275 and 1330 keV, for some chemicals, namely, sodium thiosulfate (Na2S2O3), benzoic acid (C7H6O2), sodium hydroxide (NaOH), poly vinyl alcohol (PVA) (C2H4O), potassium nitrate (KNO3), naphthalene (C10H8). Mass attenuation coefficient (µm) values obtained from the experiment were used to determine the effective atomic numbers (Zeff) and effective electron densities (Neff), atomic cross-sections (σt) and electronic cross-sections (σe); it will be observed from the present work that the variation in the obtained values is only due to the increase or decrease in the gamma ray energy and the chemical composition of the sample. It was seen that the calculated and obtained values showed good agreement. The investigated data are useful in the electronic industry, plastic industry, building materials and agriculture fields. From the present work it was found that the PVA could be used as a better gamma shielding material.

  20. Transmutation detectors

    NASA Astrophysics Data System (ADS)

    Viererbl, L.; Lahodová, Z.; Klupák, V.; Sus, F.; Kučera, J.; Kůs, P.; Marek, M.

    2011-03-01

    We have designed a new type of detectors, called transmutation detectors, which can be used primarily for neutron fluence measurement. The transmutation detector method differs from the commonly used activation detector method in evaluation of detector response after irradiation. Instead of radionuclide activity measurement using radiometric methods, the concentration of stable non-gaseous nuclides generated by transmutation in the detector is measured using analytical methods like mass spectrometry. Prospective elements and nuclear reactions for transmutation detectors are listed and initial experimental results are given. The transmutation detector method could be used primarily for long-term measurement of neutron fluence in fission nuclear reactors, but in principle it could be used for any type of radiation that can cause transmutation of nuclides in detectors. This method could also be used for measurement in accelerators or fusion reactors.

  1. Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment

    NASA Astrophysics Data System (ADS)

    Kimura, K.; Yamaguchi, D.; Motohashi, K.; Nakamura, K.; Unno, Y.; Jinnouchi, O.; Altenheiner, S.; Blue, A.; Bomben, M.; Butter, A.; Cervelli, A.; Crawley, S.; Ducourthial, A.; Gisen, A.; Hagihara, M.; Hanagaki, K.; Hara, K.; Hirose, M.; Homma, Y.; Ikegami, Y.; Kamada, S.; Kono, T.; Macchiolo, A.; Marchiori, G.; Meloni, F.; Milovanovic, M.; Morton, A.; Mullier, G.; Munoz, F. J.; Nellist, C.; Paschen, B.; Quadt, A.; Rashid, T.; Rieger, J.; Rummler, A.; Sato, K.; Sato, K.; Savic, N.; Sawai, H.; Sexton, K.; Stramaglia, M. E.; Swiatlowski, M.; Takashima, R.; Takubo, Y.; Terzo, S.; Todome, K.; Tojo, J.; Houten, K. Van; Weingarten, J.; Wonsak, S.; Wraight, K.; Yamamura, K.

    2016-09-01

    Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD).

  2. A PFM based digital pixel with off-pixel residue measurement for 15μm pitch MWIR FPAs

    NASA Astrophysics Data System (ADS)

    Abbasi, Shahbaz; Shafique, Atia; Galioglu, Arman; Ceylan, Omer; Yazici, Melik; Gurbuz, Yasar

    2016-05-01

    Digital pixels based on pulse frequency modulation (PFM) employ counting techniques to achieve very high charge handling capability compared to their analog counterparts. Moreover, extended counting methods making use of leftover charge (residue) on the integration capacitor help improve the noise performance of these pixels. However, medium wave infrared (MWIR) focal plane arrays (FPAs) having smaller pixel pitch are constrained in terms of pixel area which makes it difficult to add extended counting circuitry to the pixel. Thus, this paper investigates the performance of digital pixels employing off-pixel residue measurement. A circuit prototype of such a pixel has been designed for 15μm pixel pitch and fabricated in 90nm CMOS. The prototype is composed of a pixel front-end based on a PFM loop. The frontend is a modified version of conventional design providing a means for buffering the signal that needs to be converted to a digital value by an off-pixel ADC. The pixel has an integration phase and a residue measurement phase. Measured integration performance of the pixel has been reported in this paper for various detector currents and integration times.

  3. Development of CMOS Pixel Sensors with digital pixel dedicated to future particle physics experiments

    NASA Astrophysics Data System (ADS)

    Zhao, W.; Wang, T.; Pham, H.; Hu-Guo, C.; Dorokhov, A.; Hu, Y.

    2014-02-01

    Two prototypes of CMOS pixel sensor with in-pixel analog to digital conversion have been developed in a 0.18 μm CIS process. The first design integrates a discriminator into each pixel within an area of 22 × 33 μm2 in order to meet the requirements of the ALICE inner tracking system (ALICE-ITS) upgrade. The second design features 3-bit charge encoding inside a 35 × 35 μm2 pixel which is motivated by the specifications of the outer layers of the ILD vertex detector (ILD-VXD). This work aims to validate the concept of in-pixel digitization which offers higher readout speed, lower power consumption and less dead zone compared with the column-level charge encoding.

  4. PixelLearn

    NASA Technical Reports Server (NTRS)

    Mazzoni, Dominic; Wagstaff, Kiri; Bornstein, Benjamin; Tang, Nghia; Roden, Joseph

    2006-01-01

    PixelLearn is an integrated user-interface computer program for classifying pixels in scientific images. Heretofore, training a machine-learning algorithm to classify pixels in images has been tedious and difficult. PixelLearn provides a graphical user interface that makes it faster and more intuitive, leading to more interactive exploration of image data sets. PixelLearn also provides image-enhancement controls to make it easier to see subtle details in images. PixelLearn opens images or sets of images in a variety of common scientific file formats and enables the user to interact with several supervised or unsupervised machine-learning pixel-classifying algorithms while the user continues to browse through the images. The machinelearning algorithms in PixelLearn use advanced clustering and classification methods that enable accuracy much higher than is achievable by most other software previously available for this purpose. PixelLearn is written in portable C++ and runs natively on computers running Linux, Windows, or Mac OS X.

  5. Two-dimensional pixel array image sensor for protein crystallography

    SciTech Connect

    Beuville, E.; Beche, J.-F.; Cork, C.

    1996-07-01

    A 2D pixel array image sensor module has been designed for time resolved Protein Crystallography. This smart pixels detector significantly enhances time resolved Laue Protein crystallography by two to three orders of magnitude compared to existing sensors like films or phosphor screens coupled to CCDs. The resolution in time and dynamic range of this type of detector will allow one to study the evolution of structural changes that occur within the protein as a function of time. This detector will also considerably accelerate data collection in static Laue or monochromatic crystallography and make better use of the intense beam delivered by synchrotron light sources. The event driven pixel array detectors, based on the column Architecture, can provide multiparameter information (energy discrimination, time), with sparse and frameless readout without significant dead time. The prototype module consists of a 16x16 pixel diode array bump-bonded to the integrated circuit. The detection area is 150x150 square microns.

  6. Pixelated filters for spatial imaging

    NASA Astrophysics Data System (ADS)

    Mathieu, Karine; Lequime, Michel; Lumeau, Julien; Abel-Tiberini, Laetitia; Savin De Larclause, Isabelle; Berthon, Jacques

    2015-10-01

    Small satellites are often used by spatial agencies to meet scientific spatial mission requirements. Their payloads are composed of various instruments collecting an increasing amount of data, as well as respecting the growing constraints relative to volume and mass; So small-sized integrated camera have taken a favored place among these instruments. To ensure scene specific color information sensing, pixelated filters seem to be more attractive than filter wheels. The work presented here, in collaboration with Institut Fresnel, deals with the manufacturing of this kind of component, based on thin film technologies and photolithography processes. CCD detectors with a pixel pitch about 30 μm were considered. In the configuration where the matrix filters are positioned the closest to the detector, the matrix filters are composed of 2x2 macro pixels (e.g. 4 filters). These 4 filters have a bandwidth about 40 nm and are respectively centered at 550, 700, 770 and 840 nm with a specific rejection rate defined on the visible spectral range [500 - 900 nm]. After an intense design step, 4 thin-film structures have been elaborated with a maximum thickness of 5 μm. A run of tests has allowed us to choose the optimal micro-structuration parameters. The 100x100 matrix filters prototypes have been successfully manufactured with lift-off and ion assisted deposition processes. High spatial and spectral characterization, with a dedicated metrology bench, showed that initial specifications and simulations were globally met. These excellent performances knock down the technological barriers for high-end integrated specific multi spectral imaging.

  7. Development of a high density pixel multichip module at Fermilab

    SciTech Connect

    Cardoso, G.

    2001-03-08

    At Fermilab, both pixel detector multichip module and sensor hybridization are being developed for the BTeV experiment. The BTeV pixel detector is based on a design relying on a hybrid approach. With this approach, the readout chip and the sensor array are developed separately and the detector is constructed by flip-chip mating the two together. This method offers maximum flexibility in the development process, choice of fabrication technologies, and the choice of sensor material. This paper presents strategies to handle the required data rate and performance results of the first prototype and detector hybridization.

  8. Status of the CMS pixel project

    SciTech Connect

    Uplegger, Lorenzo; /Fermilab

    2008-01-01

    The Compact Muon Solenoid Experiment (CMS) will start taking data at the Large Hadron Collider (LHC) in 2008. The closest detector to the interaction point is the silicon pixel detector which is the heart of the tracking system. It consists of three barrel layers and two pixel disks on each side of the interaction point for a total of 66 million channels. Its proximity to the interaction point means there will be very large particle fluences and therefore a radiation-tolerant design is necessary. The pixel detector will be crucial to achieve a good vertex resolution and will play a key role in pattern recognition and track reconstruction. The results from test beam runs prove that the expected performances can be achieved. The detector is currently being assembled and will be ready for insertion into CMS in early 2008. During the assembly phase, a thorough electronic test is being done to check the functionality of each channel to guarantee the performance required to achieve the physics goals. This report will present the final detector design, the status of the production as well as results from test beam runs to validate the expected performance.

  9. Active pixel sensors in AMS H18/H35 HV-CMOS technology for the ATLAS HL-LHC upgrade

    NASA Astrophysics Data System (ADS)

    Ristic, Branislav

    2016-09-01

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement signal processing electronics in deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150 V leading to a depletion depth of several 10 μm. Prototype sensors in the AMS H18 180 nm and H35 350 nm HV-CMOS processes were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiations with X-rays and protons revealed a tolerance to ionizing doses of 1 Grad while Edge-TCT studies assessed the effects of radiation on the charge collection. The sensors showed high detection efficiencies after neutron irradiation to 1015neq cm-2 in testbeam experiments. A full reticle size demonstrator chip, implemented in the H35 process is being submitted to prove the large scale feasibility of the HV-CMOS concept.

  10. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    NASA Astrophysics Data System (ADS)

    Andricek, L.; Beimforde, M.; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R. H.

    2011-04-01

    A new pixel module concept is presented utilizing thin sensors and a novel vertical integration technique for the ATLAS pixel detector in view of the foreseen LHC luminosity upgrades. A first set of pixel sensors with active thicknesses of 75 and 150μm has been produced from wafers of standard thickness using a thinning process developed at the Max-Planck-Institut Halbleiterlabor (HLL) and the Max-Planck-Institut für Physik (MPP). Pre-irradiation characterizations of these sensors show a very good device yield and high break down voltage. First proton irradiations up to a fluence of 1015 neq cm-2 have been carried out and their impact on the electrical properties of thin sensors has been studied.The novel ICV-SLID vertical integration technology will allow for routing signals vertically to the back side of the readout chips. With this, four-side buttable detector devices with an increased active area fraction are made possible. A first production of SLID test structures was performed and showed a high connection efficiency for different pad sizes and a mild sensitivity to disturbances of the surface planarity.

  11. Characterization of radiation damage caused by 23 MeV protons in Multi-Pixel Photon Counter (MPPC)

    NASA Astrophysics Data System (ADS)

    Li, Zhengwei; Xu, Yupeng; Liu, Congzhan; Gu, Yudong; Xie, Fei; Li, Yanguo; Hu, Hongliang; Zhou, Xu; Lu, Xuefeng; Li, Xufang; Zhang, Shuo; Chang, Zhi; Zhang, Juan; Xu, Zhenling; Zhang, Yifei; Zhao, Jianling

    2016-06-01

    A automatic gain control system (AGC) is designed to continuously monitor and automatically control the gain of the phoswich detectors onboard the Hard X-ray Modulation Telescope (HXMT). It consists of a Am241 radioactive source and a photo-detector. The Am241 radioactive source is tagged within a plastic scintillator (BC440M). The scintillating photons produced by the decayed alpha particles from the radioactive source is readout by the photo-detector. The Multi-Pixel Photon Counter (MPPC) produced by Hamamatsu is used as the photo-detector for AGC. To verify the feasibility of its application in space environment, four MPPCs (S10362-33-050C) were irradiated by a beam of 23 MeV protons. The integrated proton fluence that exposed to the four MPPC samples are 1.0 ×108 p cm-2 , 2.0 ×108 p cm-2 , 4.0 ×108 p cm-2 and 1.0 ×1010 p cm-2 respectively. It is found that the increment leakage current of the MPPC samples caused by irradiation damage increase linearly with the integrated fluence. The pulse-height resolution of the MPPC has deteriorated hardly after irradiation. When irradiated up to 1.1 ×109cm-2 1 MeV equivalent neutrons, the MPPC completely lost its photon-counting capability but could still work as a photo-detector for AGC. The MPPC fails as a photo-detector for the AGC when the irradiated 1 MeV neutron equivalent fluences is up to 2.7 ×1010cm-2 .

  12. Pixel frontend electronics in a radiation hard technology for hybrid and monolithic applications

    SciTech Connect

    Pengg, F. |; Campbell, M.; Heijne, E.H.M.; Snoeys, W.

    1996-06-01

    Pixel detector readout cells have been designed in the radiation hard DMILL technology and their characteristics evaluated before and after irradiation to 14Mrad. The test chip consists of two blocks of six readout cells each. Two different charge amplifiers are implemented, one of them using a capacitive feedback loop, the other the fast signal charge transfer to a high impedance integrating node. The measured equivalent noise charge is 110e{sup {minus}}r.m.s. before and 150e{sup {minus}}r.m.s. after irradiation. With a discriminator threshold set to 5000e{sup {minus}}, which reduces for the same bias setting to 400e{sup {minus}} after irradiation, the threshold variation is 300e{sup {minus}}r.m.s. and 250e{sup {minus}}r.m.s. respectively. The time walk is 40ns before and after irradiation. The use of this SOI technology for monolithic integration of electronics and detector in one substrate is under investigation.

  13. Small pixel oversampled IR focal plane arrays

    NASA Astrophysics Data System (ADS)

    Caulfield, John; Curzan, Jon; Lewis, Jay; Dhar, Nibir

    2015-06-01

    We report on a new high definition high charge capacity 2.1 Mpixel MWIR Infrared Focal Plane Array. This high definition (HD) FPA utilizes a small 5 um pitch pixel size which is below the Nyquist limit imposed by the optical systems Point Spread Function (PSF). These smaller sub diffraction limited pixels allow spatial oversampling of the image. We show that oversampling IRFPAs enables improved fidelity in imaging including resolution improvements, advanced pixel correlation processing to reduce false alarm rates, improved detection ranges, and an improved ability to track closely spaced objects. Small pixel HD arrays are viewed as the key component enabling lower size, power and weight of the IR Sensor System. Small pixels enables a reduction in the size of the systems components from the smaller detector and ROIC array, the reduced optics focal length and overall lens size, resulting in an overall compactness in the sensor package, cooling and associated electronics. The highly sensitive MWIR small pixel HD FPA has the capability to detect dimmer signals at longer ranges than previously demonstrated.

  14. Test bench for infrared detectors

    NASA Astrophysics Data System (ADS)

    Campos, Thierry

    2005-01-01

    The Bench for Infrared Detectors (BIRD 210) has been designed for testing IRFPA detectors up to 1024 x 1024 pixels. It is also suitable for single element detectors. The detectors are required to be equipped with their coolers (Stirling or thermo electrics) and cooler electronics.

  15. Monolithic pixels on moderate resistivity substrate and sparsifying readout architecture

    NASA Astrophysics Data System (ADS)

    Giubilato, P.; Battaglia, M.; Bisello, D.; Caselle, M.; Chalmet, P.; Demaria, L.; Ikemoto, Y.; Kloukinas, K.; Mansuy, S. C.; Mattiazzo, S.; Marchioro, A.; Mugnier, H.; Pantano, D.; Potenza, A.; Rivetti, A.; Rousset, J.; Silvestrin, L.; Snoeys, W.

    2013-12-01

    The LePix projects aim realizing a new generation monolithic pixel detectors with improved performances at lesser cost with respect to both current state of the art monolithic and hybrid pixel sensors. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This allows charge collection by drift while maintaining the other advantages usually offered by MAPS, like having a single piece detector and using a standard CMOS production line. The collection by drift mechanism, coupled to the low capacitance design of the collecting node made possible by the monolithic approach, provides an excellent signal to noise ratio straight at the pixel cell together with a radiation tolerance far superior to conventional un-depleted MAPS. The excellent signal-to-noise performance is demonstrated by the device ability to separate the 6 keV 55Fe double peak at room temperature. To achieve high granularity (10-20 μm pitch pixels) over large detector areas maintaining high readout speed, a completely new compressing architecture has been devised. This architecture departs from the mainstream hybrid pixel sparsification approach, which uses in-pixel logic to reduce data, by using topological compression to minimize pixel area and power consumption.

  16. Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Tartarotti Maimone, D.; Pennicard, D.; Sarajlic, M.; Graafsma, H.

    2014-12-01

    Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~ 10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effects, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of the electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel (``edge space"). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays ( < 10 keV), especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model can be used to optimize the edge design. From the edge optimization, it is found that in order to guarantee the sensitivity of the last few pixels to low-energy X-rays, the edge space should be kept at least 50% of

  17. Detector requirements for space infrared astronomy

    NASA Technical Reports Server (NTRS)

    Wright, E. L.

    1986-01-01

    Requirements for background-limited (BLIP) detectors are discussed in terms of number of photons falling on each pixel, dark current, high detective quantum efficiencies, large numbers of pixels, and array size.

  18. Power Studies for the CMS Pixel Tracker

    SciTech Connect

    Todri, A.; Turqueti, M.; Rivera, R.; Kwan, S.; /Fermilab

    2009-01-01

    The Electronic Systems Engineering Department of the Computing Division at the Fermi National Accelerator Laboratory is carrying out R&D investigations for the upgrade of the power distribution system of the Compact Muon Solenoid (CMS) Pixel Tracker at the Large Hadron Collider (LHC). Among the goals of this effort is that of analyzing the feasibility of alternative powering schemes for the forward tracker, including DC to DC voltage conversion techniques using commercially available and custom switching regulator circuits. Tests of these approaches are performed using the PSI46 pixel readout chip currently in use at the CMS Tracker. Performance measures of the detector electronics will include pixel noise and threshold dispersion results. Issues related to susceptibility to switching noise will be studied and presented. In this paper, we describe the current power distribution network of the CMS Tracker, study the implications of the proposed upgrade with DC-DC converters powering scheme and perform noise susceptibility analysis.

  19. Active Pixel Sensors: Are CCD's Dinosaurs?

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R.

    1993-01-01

    Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

  20. Digital-pixel focal plane array development

    NASA Astrophysics Data System (ADS)

    Brown, Matthew G.; Baker, Justin; Colonero, Curtis; Costa, Joe; Gardner, Tom; Kelly, Mike; Schultz, Ken; Tyrrell, Brian; Wey, Jim

    2010-01-01

    Since 2006, MIT Lincoln Laboratory has been developing Digital-pixel Focal Plane Array (DFPA) readout integrated circuits (ROICs). To date, four 256 × 256 30 μm pitch DFPA designs with in-pixel analog to digital conversion have been fabricated using IBM 90 nm CMOS processes. The DFPA ROICs are compatible with a wide range of detector materials and cutoff wavelengths; HgCdTe, QWIP, and InGaAs photo-detectors with cutoff wavelengths ranging from 1.6 to 14.5 μm have been hybridized to the same digital-pixel readout. The digital-pixel readout architecture offers high dynamic range, A/C or D/C coupled integration, and on-chip image processing with low power orthogonal transfer operations. The newest ROIC designs support two-color operation with a single Indium bump connection. Development and characterization of the two-color DFPA designs is presented along with applications for this new digital readout technology.

  1. Selecting Pixels for Kepler Downlink

    NASA Technical Reports Server (NTRS)

    Bryson, Stephen T.; Jenkins, Jon M.; Klaus, Todd C.; Cote, Miles T.; Quintana, Elisa V.; Hall, Jennifer R.; Ibrahim, Khadeejah; Chandrasekaran, Hema; Caldwell, Douglas A.; Van Cleve, Jeffrey E.; Haas, Michael R.

    2010-01-01

    The Kepler mission monitors > 100,000 stellar targets using 42 2200 1024 pixel CCDs. Bandwidth constraints prevent the downlink of all 96 million pixels per 30-minute cadence, so the Kepler spacecraft downlinks a specified collection of pixels for each target. These pixels are selected by considering the object brightness, background and the signal-to-noise of each pixel, and are optimized to maximize the signal-to-noise ratio of the target. This paper describes pixel selection, creation of spacecraft apertures that efficiently capture selected pixels, and aperture assignment to a target. Diagnostic apertures, short-cadence targets and custom specified shapes are discussed.

  2. A novel CMOS sensor with in-pixel auto-zeroed discrimination for charged particle tracking

    NASA Astrophysics Data System (ADS)

    Degerli, Y.; Guilloux, F.; Orsini, F.

    2014-05-01

    With the aim of developing fast and granular Monolithic Active Pixels Sensors (MAPS) as new charged particle tracking detectors for high energy physics experiments, a new rolling shutter binary pixel architecture concept (RSBPix) with in-pixel correlated double sampling, amplification and discrimination is presented. The discriminator features auto-zeroing in order to compensate process-related transistor mismatches. In order to validate the pixel, a first monolithic CMOS sensor prototype, including a pixel array of 96 × 64 pixels, has been designed and fabricated in the Tower-Jazz 0.18 μm CMOS Image Sensor (CIS) process. Results of laboratory tests are presented.

  3. SNR improvement for hyperspectral application using frame and pixel binning

    NASA Astrophysics Data System (ADS)

    Rehman, Sami Ur; Kumar, Ankush; Banerjee, Arup

    2016-05-01

    Hyperspectral imaging spectrometer systems are increasingly being used in the field of remote sensing for variety of civilian and military applications. The ability of such instruments in discriminating finer spectral features along with improved spatial and radiometric performance have made such instruments a powerful tool in the field of remote sensing. Design and development of spaceborne hyper spectral imaging spectrometers poses lot of technological challenges in terms of optics, dispersion element, detectors, electronics and mechanical systems. The main factors that define the type of detectors are the spectral region, SNR, dynamic range, pixel size, number of pixels, frame rate, operating temperature etc. Detectors with higher quantum efficiency and higher well depth are the preferred choice for such applications. CCD based Si detectors serves the requirement of high well depth for VNIR band spectrometers but suffers from smear. Smear can be controlled by using CMOS detectors. Si CMOS detectors with large format arrays are available. These detectors generally have smaller pitch and low well depth. Binning technique can be used with available CMOS detectors to meet the large swath, higher resolution and high SNR requirements. Availability of larger dwell time of satellite can be used to bin multiple frames to increase the signal collection even with lesser well depth detectors and ultimately increase the SNR. Lab measurements reveal that SNR improvement by frame binning is more in comparison to pixel binning. Effect of pixel binning as compared to the frame binning will be discussed and degradation of SNR as compared to theoretical value for pixel binning will be analyzed.

  4. Gaseous Detectors

    NASA Astrophysics Data System (ADS)

    Titov, Maxim

    Since long time, the compelling scientific goals of future high-energy physics experiments were a driving factor in the development of advanced detector technologies. A true innovation in detector instrumentation concepts came in 1968, with the development of a fully parallel readout for a large array of sensing elements - the Multi-Wire Proportional Chamber (MWPC), which earned Georges Charpak a Nobel prize in physics in 1992. Since that time radiation detection and imaging with fast gaseous detectors, capable of economically covering large detection volumes with low mass budget, have been playing an important role in many fields of physics. Advances in photolithography and microprocessing techniques in the chip industry during the past decade triggered a major transition in the field of gas detectors from wire structures to Micro-Pattern Gas Detector (MPGD) concepts, revolutionizing cell-size limitations for many gas detector applications. The high radiation resistance and excellent spatial and time resolution make them an invaluable tool to confront future detector challenges at the next generation of colliders. The design of the new micro-pattern devices appears suitable for industrial production. Novel structures where MPGDs are directly coupled to the CMOS pixel readout represent an exciting field allowing timing and charge measurements as well as precise spatial information in 3D. Originally developed for the high-energy physics, MPGD applications have expanded to nuclear physics, photon detection, astroparticle and neutrino physics, neutron detection, and medical imaging.

  5. Achievements of the ATLAS upgrade Planar Pixel Sensors R&D Project

    NASA Astrophysics Data System (ADS)

    Nellist, C.

    2015-01-01

    In the framework of the HL-LHC upgrade, the ATLAS experiment plans to introduce an all-silicon inner tracker to cope with the elevated occupancy. To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project (PPS) was established comprising 19 institutes and more than 90 scientists. The paper provides an overview of the research and development project and highlights accomplishments, among them: beam test results with planar sensors up to innermost layer fluences (>1016 neq cm-2) measurements obtained with irradiated thin edgeless n-in-p pixel assemblies; recent studies of the SCP technique to obtain almost active edges by post-processing already existing sensors based on scribing, cleaving and edge passivation; an update on prototyping efforts for large areas: sensor design improvements and concepts for low-cost hybridisation; comparison between Secondary Ion Mass Spectrometry results and TCAD simulations. Together, these results allow an assessment of the state-of-the-art with respect to radiation-hard position-sensitive tracking detectors suited for the instrumentation of large areas.

  6. Coherence experiments in single-pixel digital holography.

    PubMed

    Liu, Jung-Ping; Guo, Chia-Hao; Hsiao, Wei-Jen; Poon, Ting-Chung; Tsang, Peter

    2015-05-15

    In optical scanning holography (OSH), the coherence properties of the acquired holograms depend on the single-pixel size, i.e., the active area of the photodetector. For the first time, to the best of our knowledge, we have demonstrated coherent, partial coherent, and incoherent three-dimensional (3D) imaging by experiment in such a single-pixel digital holographic recording system. We have found, for the incoherent mode of OSH, in which the detector of the largest active area is applied, the 3D location of a diffusely reflecting object can be successfully retrieved without speckle noise. For the partial coherent mode employing a smaller pixel size of the detector, significant speckles and randomly distributed bright spots appear among the reconstructed images. For the coherent mode of OSH when the size of the pixel is vanishingly small, the bright spots disappear. However, the speckle remains and the signal-to-noise ratio is low. PMID:26393741

  7. Detection of thermal neutrons with a CMOS pixel sensor for a future dosemeter

    SciTech Connect

    Vanstalle, M.; Husson, D.; Higueret, S.; Le, T. D.; Nourreddine, A. M.

    2011-07-01

    The RaMsEs group (Radioprotection et Mesures Environnementales) is developing a new compact device for operational neutron dosimetry. The electronic part of the detector is made of an integrated active pixel sensor, originally designed for tracking in particle physics. This device has useful features for neutrons, such as high detection efficiency for charged particles, good radiation resistance, high readout speed, low power consumption and high rejection of photon background. A good response of the device to fast neutrons has already been demonstrated [1]. In order to test the sensibility of the detector to thermal neutrons, experiments have been carried out with a 512 x 512 pixel CMOS sensor on a californium source moderated with heavy water (Cf.D{sub 2}O) on the Van Gogh irradiator at the LMDN, IRSN, Cadarache (France)). A thin boron converter is used to benefit from the significant cross section of the {sup 10}B (n,{alpha}) {sup 7}Li reaction. Results show a high detection efficiency (around 10{sup -3}) of the device to thermal neutrons. Our measurements are in good agreement with GEANT4 Monte Carlo simulations. (authors)

  8. Vertically integrated pixel readout chip for high energy physics

    SciTech Connect

    Deptuch, Grzegorz; Demarteau, Marcel; Hoff, James; Khalid, Farah; Lipton, Ronald; Shenai, Alpana; Trimpl, Marcel; Yarema, Raymond; Zimmerman, Tom; /Fermilab

    2011-01-01

    We report on the development of the vertex detector pixel readout chips based on multi-tier vertically integrated electronics for the International Linear Collider. Some testing results of the VIP2a prototype are presented. The chip is the second iteration of the silicon implementation of the prototype, data-pushed concept of the readout developed at Fermilab. The device was fabricated in the 3D MIT-LL 0.15 {micro}m fully depleted SOI process. The prototype is a three-tier design, featuring 30 x 30 {micro}m{sup 2} pixels, laid out in an array of 48 x 48 pixels.

  9. Diamond detectors with laser induced surface graphite electrodes

    NASA Astrophysics Data System (ADS)

    Komlenok, M.; Bolshakov, A.; Ralchenko, V.; Konov, V.; Conte, G.; Girolami, M.; Oliva, P.; Salvatori, S.

    2016-11-01

    We report on the response of metal-less CVD polycrystalline-diamond pixel sensors under β-particles irradiation. A 21×21 array of 0.18×0.18 mm2 pixels was realized on one side of a 10.0×10.0×0.5 mm3 polycrystalline diamond substrate by means of laser induced surface graphitization. With the same technique, a large graphite contact, used for detector biasing, was fabricated on the opposite side. A coincidence detecting method was used with two other reference polycrystalline diamond detectors for triggering, instead of commonly used scintillators, positioned in the front and on the back of the sensor-array with respect to the impinging particles trajectory. The collected charge distribution at each pixel was analyzed as a function of the applied bias. No change in the pulse height distribution was recorded by inverting the bias voltage polarity, denoting contacts ohmicity and symmetry. A fairly good pixel response uniformity was obtained: the collected charge most probable value saturates for all the pixels at an electric field strength of about ±0.6 V/μm. Under saturation condition, the average collected charge was equal to =1.64±0.02 fC, implying a charge collection distance of about 285 μm. A similar result, within 2%, was also obtained for 400 MeV electrons at beam test facility at INFN Frascati National Laboratory. Experimental results highlighted that more than 84% of impinging particles involved only one pixel, with no significant observed cross-talk effects.

  10. Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

    NASA Astrophysics Data System (ADS)

    Mori, R.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Arratia-Munoz, M. I.; Hommels, L. B. A.; Ullan, M.; Fleta, C.; Fernandez-Tejero, J.; Bloch, I.; Gregor, I. M.; Lohwasser, K.; Poley, L.; Tackmann, K.; Trofimov, A.; Yildirim, E.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Garcia, S. Marti i.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

    2016-09-01

    The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

  11. Level-1 pixel based tracking trigger algorithm for LHC upgrade

    NASA Astrophysics Data System (ADS)

    Moon, C.-S.; Savoy-Navarro, A.

    2015-10-01

    The Pixel Detector is the innermost detector of the tracking system of the Compact Muon Solenoid (CMS) experiment at CERN Large Hadron Collider (LHC) . It precisely determines the interaction point (primary vertex) of the events and the possible secondary vertexes due to heavy flavours (b and c quarks); it is part of the overall tracking system that allows reconstructing the tracks of the charged particles in the events and combined with the magnetic field to measure their momentum. The pixel detector allows measuring the tracks in the region closest to the interaction point. The Level-1 (real-time) pixel based tracking trigger is a novel trigger system that is currently being studied for the LHC upgrade. An important goal is developing real-time track reconstruction algorithms able to cope with very high rates and high flux of data in a very harsh environment. The pixel detector has an especially crucial role in precisely identifying the primary vertex of the rare physics events from the large pile-up (PU) of events. The goal of adding the pixel information already at the real-time level of the selection is to help reducing the total level-1 trigger rate while keeping an high selection capability. This is quite an innovative and challenging objective for the experiments upgrade for the High Luminosity LHC (HL-LHC) . The special case here addressed is the CMS experiment. This document describes exercises focusing on the development of a fast pixel track reconstruction where the pixel track matches with a Level-1 electron object using a ROOT-based simulation framework.

  12. Recent results of the ATLAS upgrade Planar Pixel Sensors R&D project

    NASA Astrophysics Data System (ADS)

    Forshaw, Dean

    2013-12-01

    To extend the physics reach of the LHC, upgrades to the accelerator are planned which will increase the integrated annual luminosity by a factor of 5-10. This will increase the occupancy and the radiation damage of the inner trackers. To cope with the elevated occupancy, the ATLAS experiment plans to introduce an all silicon inner tracker for High Luminosity LHC (HL-LHC) operation. With silicon, the occupancy can be adjusted by using the appropriate pitch for the pixels/micro-strips. Constraints due to high radiation damage mean that only sensors with electrode configuration designed to read out the electron signal (n-in-p and n-in-n) are considered. To investigate the suitability of planar pixel sensors (PPS) for the ATLAS tracker upgrade, a dedicated R&D project was established, with 17 institutes and more than 80 scientists. The main focuses of research are the performance of planar pixel sensors after the high fluences expected during HL-LHC operation, the optimisation of the detector and module production technologies for cost reduction to enable the instrumentation of large volumes and the reduction of the inactive areas needed for electrical insulation of the sensitive region from the cut edge of the sensors. An overview of recent accomplishments of the PPS (Planar Pixel Sensors) R&D project is given. The performance in terms of charge collection and tracking efficiency, evaluated with radioactive sources in the laboratory and from beam tests, is presented. Sensors with different thicknesses (ranging from 75 to 300 μm) were irradiated to several fluences up to 2 ×1016neqcm-2 to study the effect of varying thickness on the radiation hardness. The significant progresses made towards the reduction of the edge distance are reported.

  13. Recent results on 3D double sided detectors with slim edges

    NASA Astrophysics Data System (ADS)

    Pellegrini, G.; Baselga, M.; Christophersen, M.; Ely, S.; Fadeyev, V.; Fleta, C.; Gimenez, A.; Grinstein, S.; Lopez, I.; Lozano, M.; Micelli, A.; Phlips, B. F.; Quirion, D.; Sadrozinski, H. F.-W.; Tsiskaridze, S.

    2013-12-01

    This paper reports on the first characterization of double sided 3D silicon radiation pixel detectors with slim edges. These detectors consist of a three-dimensional array of electrodes that penetrate into the detector bulk with the anode and cathode electrodes etched from opposite sides of the substrate. Different detectors were post-processed using the scribe-cleave-passivate (SCP) technology to make “slim edge” sensors. These sensors have only a minimal amount of inactive peripheral region, for the benefit of the construction of large-area tracker and imaging systems. The target application for this work is the use of 3D slim edge detectors for the ATLAS Forward Physics (AFP) CERN Project, where pixel detectors for position resolution and timing detectors for removal of pile up protons, will be placed as close as possible to the beam to detect diffractive protons at 220 m on either side of the ATLAS interaction point. For this reason the silicon areas should feature the narrowest possible insensitive zone on the sensor edge closest to the beam and withstand high nonuniform irradiation fluences.

  14. Electron transport and charge induction in cadmium zinc telluride detectors with space charge build up under intense x-ray irradiation

    SciTech Connect

    Bale, Derek S.; Szeles, Csaba

    2010-06-15

    Under intense x-ray irradiation, wide band gap semiconductor radiation detectors fabricated from crystals with low hole transport properties develop a steady-state space charge distribution that results from a dynamic equilibrium between charge carrier dynamics and the incident photon field. At a high enough x-ray flux, this space charge can collapse the electric field within the detector, resulting in the paralyzation of photon counting (i.e., high-flux polarization). However, well before polarization causes a catastrophic device failure, there can be enough space charge present to significantly modify the electric field. A modified field affects the electron transport and, therefore, signal generation within the sensor, which can ultimately degrade the performance of high-rate photon counting electronics. In this study, we analytically solve the fundamental equation of charge conservation to derive the modified electron transport in the presence of an exponential space charge distribution that results from the incident x-rays. We use these space-time solutions to calculate and study the time dependence of the resulting charge-induced signals. The predicted induced signals are compared throughout with numerical solutions of the full charge transport equation. In addition, we present analogous closed-form signals for a uniform distribution relevant to a broader class of {gamma}-ray applications. Finally, we use these solutions to derive a two-parameter family of modified Hecht curves that naturally predict a voltage offset that appears due to the space charge.

  15. ``The Read-Out Driver'' ROD card for the Insertable B-layer (IBL) detector of the ATLAS experiment: commissioning and upgrade studies for the Pixel Layers 1 and 2

    NASA Astrophysics Data System (ADS)

    Balbi, G.; Bindi, M.; Chen, S. P.; Falchieri, D.; Flick, T.; Gabrielli, A.; Hauck, S.; Hsu, S. C.; Kretz, M.; Kugel, A.; Lama, L.; Morettini, P.; Travaglini, R.; Wensing, M.

    2014-01-01

    The upgrade of the ATLAS experiment at LHC foresees the insertion of an innermost silicon layer, called the Insertable B-layer (IBL). The IBL read-out system will be equipped with new electronics. The Readout-Driver card (ROD) is a VME board devoted to data processing, configuration and control. A pre-production batch has been delivered for testing with instrumented slices of the overall acquisition chain, aiming to finalize strategies for system commissioning. In this paper system setups and results will be described, as well as preliminary studies on changes needed to adopt the ROD for the ATLAS Pixel Layers 1 and 2.

  16. Digital mammography: tradeoffs between 50- and 100-micron pixel size

    NASA Astrophysics Data System (ADS)

    Freedman, Matthew T.; Steller Artz, Dorothy E.; Jafroudi, Hamid; Lo, Shih-Chung B.; Zuurbier, Rebecca A.; Katial, Raj; Hayes, Wendelin S.; Wu, Chris Y.; Lin, Jyh-Shyan; Steinman, Richard M.; Tohme, Walid G.; Mun, Seong K.

    1995-05-01

    Improvements in mammography equipment related to a decrease in pixel size of digital mammography detectors raise questions of the possible effects of these new detectors. Mathematical modeling suggested that the benefits of moving from 100 to 50 micron detectors were slight and might not justify the cost of these new units. Experiments comparing screen film mammography, a storage phosphor 100 micron digital detector, a 50 micron digital breast spot device, 100 micron film digitization and 50 micron film digitization suggests that object conspicuity should be better for digital compared to conventional systems, but that there seemed to be minimal advantage to going from 100 to 50 microns. The 50 micron pixel system appears to provide a slight advantage in object contrast and perhaps in shape definition, but did not allow smaller objects to be detected.

  17. Total Body Irradiation, Toward Optimal Individual Delivery: Dose Evaluation With Metal Oxide Field Effect Transistors, Thermoluminescence Detectors, and a Treatment Planning System

    SciTech Connect

    Bloemen-van Gurp, Esther J. Mijnheer, Ben J.; Verschueren, Tom A.M.; Lambin, Philippe

    2007-11-15

    Purpose: To predict the three-dimensional dose distribution of our total body irradiation technique, using a commercial treatment planning system (TPS). In vivo dosimetry, using metal oxide field effect transistors (MOSFETs) and thermoluminescence detectors (TLDs), was used to verify the calculated dose distributions. Methods and Materials: A total body computed tomography scan was performed and loaded into our TPS, and a three-dimensional-dose distribution was generated. In vivo dosimetry was performed at five locations on the patient. Entrance and exit dose values were converted to midline doses using conversion factors, previously determined with phantom measurements. The TPS-predicted dose values were compared with the MOSFET and TLD in vivo dose values. Results: The MOSFET and TLD dose values agreed within 3.0% and the MOSFET and TPS data within 0.5%. The convolution algorithm of the TPS, which is routinely applied in the clinic, overestimated the dose in the lung region. Using a superposition algorithm reduced the calculated lung dose by approximately 3%. The dose inhomogeneity, as predicted by the TPS, can be reduced using a simple intensity-modulated radiotherapy technique. Conclusions: The use of a TPS to calculate the dose distributions in individual patients during total body irradiation is strongly recommended. Using a TPS gives good insight of the over- and underdosage in a patient and the influence of patient positioning on dose homogeneity. MOSFETs are suitable for in vivo dosimetry purposes during total body irradiation, when using appropriate conversion factors. The MOSFET, TLD, and TPS results agreed within acceptable margins.

  18. Overview and present status of the CMS Phase 1 pixel upgrade

    NASA Astrophysics Data System (ADS)

    Lipinski, M.

    2016-07-01

    During Run 2 of the LHC a significant luminosity increase to 2 ×1034cm-2s-1 is foreseen. As the innermost tracking device of CMS, the silicon pixel detector has to cope with large particle fluxes and radiation damage. To maintain the present high tracking efficiency, the current pixel detector will be replaced during an extended winter shutdown in 2016/2017. The design of the new detector is described, with a special focus on the construction and testing of the pixel modules.

  19. Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

    NASA Astrophysics Data System (ADS)

    Ruddell, F. H.; Suder, S. L.; Bain, M. F.; Montgomery, J. H.; Armstrong, B. M.; Gamble, H. S.; Denvir, D.; Casse, G.; Bowcock, T.; Allport, P. P.; Marczewski, J.; Kucharski, K.; Tomaszewski, D.; Niemiec, H.; Kucewicz, W.

    2008-12-01

    Silicon on insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100 V and average leakage current densities at 70 V were only 55 nA/cm 2. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45 × 10 11 cm -2 for a dose of 2.7 Mrad.

  20. Junction-side illuminated silicon detector arrays

    DOEpatents

    Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

    2004-03-30

    A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

  1. Small pixel uncooled imaging FPAs and applications

    NASA Astrophysics Data System (ADS)

    Blackwell, Richard; Franks, Glen; Lacroix, Daniel; Hyland, Sandra; Murphy, Robert

    2010-04-01

    BAE Systems continues to make dramatic progress in uncooled microbolometer sensors and applications. This paper will review the latest advancements in microbolometer technology at BAE Systems, including the development status of 17 micrometer pixel pitch detectors and imaging modules which are entering production and will be finding their way into BAE Systems products and applications. Benefits include increased die per wafer and potential benefits to SWAP for many applications. Applications include thermal weapons sights, thermal imaging modules for remote weapon stations, vehicle situational awareness sensors and mast/pole mounted sensors.

  2. Inter-pixel Size Variations as Source of Spitzer Systematics

    NASA Astrophysics Data System (ADS)

    Himes, Michael David; Harrington, Joseph; Lust, Nathaniel B.

    2016-10-01

    In the astrophysical sciences imaging devices are commonly assumed to contain evenly sized pixels, with each pixel converting light to signal with a slightly different efficiency. These variations are accounted for by exposing the detector to a uniform light source and comparing each value to the mean of the exposure and dividing by the result (flatfielding) . If the detector instead had pixels which varied in size, the same variations to uniform illumination would be recorded and subsequently removed. However, in the presence of a flux gradient such as a star, the flatfielding will alter these flux values which in turn affects any analysis of the data. This alteration would be due to varying size pixels being corrected to a unit area through the flatfield, when the pixels themselves rightfully record a non-uniform area of the point-spread function (PSF). We believe that this may be the source of Spitzer's systematic error attributed to gain variations. We demonstrate what an imaging device with inter-pixel size differences looks like from a data standpoint, its effects on estimating the widths of a point source, and investigations to properly account for size variations without altering flux values.

  3. Kinetics of the current response in TlBr detectors under a high dose rate of {gamma}-ray irradiation

    SciTech Connect

    Gazizov, I. M.; Zaletin, V. M.; Kukushkin, V. M.; Kuznetsov, M. S.; Lisitsky, I. S.

    2012-03-15

    The kinetics of the photocurrent response in doped and undoped TlBr samples subjected to irradiation with {gamma}-ray photons from a {sup 137}Cs source with the dose rate 0.033 to 3.84 Gy/min are studied. The crystals were grown by the directional crystallization of the melt method using the Bridgman-Stockbarger technique. The Pb impurity mass fraction introduced into the doped TlBr crystals was 1-10 ppm and amounted to 150 ppm for the Ca impurity. The crystals were grown in a vacuum, in bromine vapors, in a hydrogen atmosphere, and in air. Decay of the photocurrent is observed for extrinsic semiconductor crystals doped with bivalent cations (irrespective of the growth atmosphere), and also for crystals grown in hydrogen and crystals grown in an excess of thallium. The time constant of photocurrent decay {tau} amounted to 30-1400 s and was proportional to resistivity. It is shown that the current response can be related to photolysis in the TlBr crystals during irradiation with {gamma}-ray photons. The energy of hole traps responsible for a slow increase in the photo-current has been estimated and found to be equal to 0.6-0.85 eV.

  4. Depleted CMOS pixels for LHC proton-proton experiments

    NASA Astrophysics Data System (ADS)

    Wermes, N.

    2016-07-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  5. The NUC and blind pixel eliminating in the DTDI application

    NASA Astrophysics Data System (ADS)

    Su, Xiao Feng; Chen, Fan Sheng; Pan, Sheng Da; Gong, Xue Yi; Dong, Yu Cui

    2013-12-01

    AS infrared CMOS Digital TDI (Time Delay and integrate) has a simple structure, excellent performance and flexible operation, it has been used in more and more applications. Because of the limitation of the Production process level, the plane array of the infrared detector has a large NU (non-uniformity) and a certain blind pixel rate. Both of the two will raise the noise and lead to the TDI works not very well. In this paper, for the impact of the system performance, the most important elements are analyzed, which are the NU of the optical system, the NU of the Plane array and the blind pixel in the Plane array. Here a reasonable algorithm which considers the background removal and the linear response model of the infrared detector is used to do the NUC (Non-uniformity correction) process, when the infrared detector array is used as a Digital TDI. In order to eliminate the impact of the blind pixel, the concept of surplus pixel method is introduced in, through the method, the SNR (signal to noise ratio) can be improved and the spatial and temporal resolution will not be changed. Finally we use a MWIR (Medium Ware Infrared) detector to do the experiment and the result proves the effectiveness of the method.

  6. VeloPix: the pixel ASIC for the LHCb upgrade

    NASA Astrophysics Data System (ADS)

    Poikela, T.; De Gaspari, M.; Plosila, J.; Westerlund, T.; Ballabriga, R.; Buytaert, J.; Campbell, M.; Llopart, X.; Wyllie, K.; Gromov, V.; van Beuzekom, M.; Zivkovic, V.

    2015-01-01

    The LHCb Vertex Detector (VELO) will be upgraded in 2018 along with the other subsystems of LHCb in order to enable full readout at 40 MHz, with the data fed directly to the software triggering algorithms. The upgraded VELO is a lightweight hybrid pixel detector operating in vacuum in close proximity to the LHC beams. The readout will be provided by a dedicated front-end ASIC, dubbed VeloPix, matched to the LHCb readout requirements and the 55 × 55 μm VELO pixel dimensions. The chip is closely related to the Timepix3, from the Medipix family of ASICs. The principal challenge that the chip has to meet is a hit rate of up to 900 Mhits/s, resulting in a required output bandwidth of more than 16 Gbit/s. The occupancy across the chip is also very non-uniform, and the radiation levels reach an integrated 400 Mrad over the lifetime of the detector.VeloPix is a binary pixel readout chip with a data driven readout, designed in 130 nm CMOS technology. The pixels are combined into groups of 2 × 4 super pixels, enabling a shared logic and a reduction of bandwidth due to combined address and time stamp information. The pixel hits are combined with other simultaneous hits in the same super pixel, time stamped, and immediately driven off-chip. The analog front-end must be sufficiently fast to accurately time stamp the data, with a small enough dead time to minimize data loss in the most occupied regions of the chip. The data is driven off chip with a custom designed high speed serialiser. The current status of the ASIC design, the chip architecture and the simulations will be described.

  7. Pixelation Effects in Weak Lensing

    NASA Astrophysics Data System (ADS)

    High, F. William; Rhodes, Jason; Massey, Richard; Ellis, Richard

    2007-11-01

    Weak gravitational lensing can be used to investigate both dark matter and dark energy but requires accurate measurements of the shapes of faint, distant galaxies. Such measurements are hindered by the finite resolution and pixel scale of digital cameras. We investigate the optimum choice of pixel scale for a space-based mission, using the engineering model and survey strategy of the proposed Supernova Acceleration Probe as a baseline. We do this by simulating realistic astronomical images containing a known input shear signal and then attempting to recover the signal using the Rhodes, Refregier, & Groth algorithm. We find that the quality of shear measurement is always improved by smaller pixels. However, in practice, telescopes are usually limited to a finite number of pixels and operational life span, so the total area of a survey increases with pixel size. We therefore fix the survey lifetime and the number of pixels in the focal plane while varying the pixel scale, thereby effectively varying the survey size. In a pure trade-off for image resolution versus survey area, we find that measurements of the matter power spectrum would have minimum statistical error with a pixel scale of 0.09" for a 0.14" FWHM point-spread function (PSF). The pixel scale could be increased to ~0.16" if images dithered by exactly half-pixel offsets were always available. Some of our results do depend on our adopted shape measurement method and should be regarded as an upper limit: future pipelines may require smaller pixels to overcome systematic floors not yet accessible, and, in certain circumstances, measuring the shape of the PSF might be more difficult than those of galaxies. However, the relative trends in our analysis are robust, especially those of the surface density of resolved galaxies. Our approach thus provides a snapshot of potential in available technology, and a practical counterpart to analytic studies of pixelation, which necessarily assume an idealized shape

  8. Photovoltaic retinal prosthesis with high pixel density

    NASA Astrophysics Data System (ADS)

    Mathieson, Keith; Loudin, James; Goetz, Georges; Huie, Philip; Wang, Lele; Kamins, Theodore I.; Galambos, Ludwig; Smith, Richard; Harris, James S.; Sher, Alexander; Palanker, Daniel

    2012-06-01

    Retinal degenerative diseases lead to blindness due to loss of the `image capturing' photoreceptors, while neurons in the `image-processing' inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating the surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems that deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation is produced in normal and degenerate rat retinas, with pulse durations of 0.5-4 ms, and threshold peak irradiances of 0.2-10 mW mm-2, two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 µm bipolar pixel, demonstrating the possibility of a fully integrated photovoltaic retinal prosthesis with high pixel density.

  9. Photovoltaic Retinal Prosthesis with High Pixel Density.

    PubMed

    Mathieson, Keith; Loudin, James; Goetz, Georges; Huie, Philip; Wang, Lele; Kamins, Theodore I; Galambos, Ludwig; Smith, Richard; Harris, James S; Sher, Alexander; Palanker, Daniel

    2012-06-01

    Retinal degenerative diseases lead to blindness due to loss of the "image capturing" photoreceptors, while neurons in the "image processing" inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm(2), two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 μm bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density.

  10. Photovoltaic Retinal Prosthesis with High Pixel Density

    PubMed Central

    Mathieson, Keith; Loudin, James; Goetz, Georges; Huie, Philip; Wang, Lele; Kamins, Theodore I.; Galambos, Ludwig; Smith, Richard; Harris, James S.; Sher, Alexander; Palanker, Daniel

    2012-01-01

    Retinal degenerative diseases lead to blindness due to loss of the “image capturing” photoreceptors, while neurons in the “image processing” inner retinal layers are relatively well preserved. Electronic retinal prostheses seek to restore sight by electrically stimulating surviving neurons. Most implants are powered through inductive coils, requiring complex surgical methods to implant the coil-decoder-cable-array systems, which deliver energy to stimulating electrodes via intraocular cables. We present a photovoltaic subretinal prosthesis, in which silicon photodiodes in each pixel receive power and data directly through pulsed near-infrared illumination and electrically stimulate neurons. Stimulation was produced in normal and degenerate rat retinas, with pulse durations from 0.5 to 4 ms, and threshold peak irradiances from 0.2 to 10 mW/mm2, two orders of magnitude below the ocular safety limit. Neural responses were elicited by illuminating a single 70 μm bipolar pixel, demonstrating the possibility of a fully-integrated photovoltaic retinal prosthesis with high pixel density. PMID:23049619

  11. Assembly procedure for the silicon pixel ladder for PHENIX silicon vertex tracker.

    SciTech Connect

    Onuki, Y.; PHENIX Collaboration, et al.

    2009-05-08

    The silicon vertex tracker (VTX) will be installed in the summer of 2010 to enhance the physics capabilities of the Pioneering High Energy Nuclear Interaction eXperiment (PHENIX) experiment at Brookhaven National Laboratory. The VTX consists of two types of silicon detectors: a pixel detector and a strip detector. The pixel detector consists of 30 pixel ladders placed on the two inner cylindrical layers of the VTX. The ladders are required to be assembled with high precision, however, they should be assembled in both cost and time efficient manner. We have developed an assembly bench for the ladder with several assembly fixtures and a quality assurance (Q/A) system using a 3D measurement machine. We have also developed an assembly procedure for the ladder, including a method for dispensing adhesive uniformly and encapsulation of bonding wires. The developed procedures were adopted in the assembly of the first pixel ladder and satisfy the requirements.

  12. Vertex detectors

    SciTech Connect

    Lueth, V.

    1992-07-01

    The purpose of a vertex detector is to measure position and angles of charged particle tracks to sufficient precision so as to be able to separate tracks originating from decay vertices from those produced at the interaction vertex. Such measurements are interesting because they permit the detection of weakly decaying particles with lifetimes down to 10{sup {minus}13} s, among them the {tau} lepton and charm and beauty hadrons. These two lectures are intended to introduce the reader to the different techniques for the detection of secondary vertices that have been developed over the past decades. The first lecture includes a brief introduction to the methods used to detect secondary vertices and to estimate particle lifetimes. It describes the traditional technologies, based on photographic recording in emulsions and on film of bubble chambers, and introduces fast electronic registration of signals derived from scintillating fibers, drift chambers and gaseous micro-strip chambers. The second lecture is devoted to solid state detectors. It begins with a brief introduction into semiconductor devices, and then describes the application of large arrays of strip and pixel diodes for charged particle tracking. These lectures can only serve as an introduction the topic of vertex detectors. Time and space do not allow for an in-depth coverage of many of the interesting aspects of vertex detector design and operation.

  13. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    NASA Astrophysics Data System (ADS)

    Terzo, S.; Macchiolo, A.; Nisius, R.; Paschen, B.

    2014-12-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 1016 neq/cm2.

  14. Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    Bomben, Marco; Bagolini, Alvise; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Giacomini, Gabriele; La Rosa, Alessandro; Marchiori, Giovanni; Zorzi, Nicola

    2013-06-01

    The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1×1015 neq/cm2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb-1) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

  15. THE KEPLER PIXEL RESPONSE FUNCTION

    SciTech Connect

    Bryson, Stephen T.; Haas, Michael R.; Dotson, Jessie L.; Koch, David G.; Borucki, William J.; Tenenbaum, Peter; Jenkins, Jon M.; Chandrasekaran, Hema; Caldwell, Douglas A.; Klaus, Todd; Gilliland, Ronald L.

    2010-04-20

    Kepler seeks to detect sequences of transits of Earth-size exoplanets orbiting solar-like stars. Such transit signals are on the order of 100 ppm. The high photometric precision demanded by Kepler requires detailed knowledge of how the Kepler pixels respond to starlight during a nominal observation. This information is provided by the Kepler pixel response function (PRF), defined as the composite of Kepler's optical point-spread function, integrated spacecraft pointing jitter during a nominal cadence and other systematic effects. To provide sub-pixel resolution, the PRF is represented as a piecewise-continuous polynomial on a sub-pixel mesh. This continuous representation allows the prediction of a star's flux value on any pixel given the star's pixel position. The advantages and difficulties of this polynomial representation are discussed, including characterization of spatial variation in the PRF and the smoothing of discontinuities between sub-pixel polynomial patches. On-orbit super-resolution measurements of the PRF across the Kepler field of view are described. Two uses of the PRF are presented: the selection of pixels for each star that maximizes the photometric signal-to-noise ratio for that star, and PRF-fitted centroids which provide robust and accurate stellar positions on the CCD, primarily used for attitude and plate scale tracking. Good knowledge of the PRF has been a critical component for the successful collection of high-precision photometry by Kepler.

  16. Imaging by photon counting with 256x256 pixel matrix

    NASA Astrophysics Data System (ADS)

    Tlustos, Lukas; Campbell, Michael; Heijne, Erik H. M.; Llopart, Xavier

    2004-09-01

    Using 0.25µm standard CMOS we have developed 2-D semiconductor matrix detectors with sophisticated functionality integrated inside each pixel of a hybrid sensor module. One of these sensor modules is a matrix of 256x256 square 55µm pixels intended for X-ray imaging. This device is called 'Medipix2' and features a fast amplifier and two-level discrimination for signals between 1000 and 100000 equivalent electrons, with overall signal noise ~150 e- rms. Signal polarity and comparator thresholds are programmable. A maximum count rate of nearly 1 MHz per pixel can be achieved, which corresponds to an average flux of 3x10exp10 photons per cm2. The selected signals can be accumulated in each pixel in a 13-bit register. The serial readout takes 5-10 ms. A parallel readout of ~300 µs could also be used. Housekeeping functions such as local dark current compensation, test pulse generation, silencing of noisy pixels and threshold tuning in each pixel contribute to the homogeneous response over a large sensor area. The sensor material can be adapted to the energy of the X-rays. Best results have been obtained with high-resistivity silicon detectors, but also CdTe and GaAs detectors have been used. The lowest detectable X-ray energy was about 4 keV. Background measurements have been made, as well as measurements of the uniformity of imaging by photon counting. Very low photon count rates are feasible and noise-free at room temperature. The readout matrix can be used also with visible photons if an energy or charge intensifier structure is interposed such as a gaseous amplification layer or a microchannel plate or acceleration field in vacuum.

  17. Silicon sensors for HL-LHC tracking detectors

    NASA Astrophysics Data System (ADS)

    Mandić, Igor

    2013-12-01

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC) in 2021 in order to harvest the maximum physics potential. After the upgrade, unprecedented levels of radiation will require the experiments to upgrade their tracking detectors to withstand hadron fluences equivalent to over 1016 1 MeV neutrons per cm2. Within the RD50 Collaboration, a massive R&D program is underway to develop silicon sensors with sufficient radiation tolerance. Recent defect characterization and Edge-TCT measurement results improved the understanding of irradiated detector performance. RD50 results show that sensors with n-side readout, easiest made with p-type silicon, have a superior radiation hardness due to the high overlap of electric and weighting field after irradiation, larger contribution of electrons to the total signal and finally due to charge multiplication which may enhance the collected charge at high bias voltages in this type of detector. A further area of activity is the development of advanced sensor types like 3D silicon and thin pixel detectors designed for the extreme radiation levels expected for the inner layers.

  18. Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Richardson, Georgia; Mitchell, Shannon; Ramsey, Brian; Seller, Paul; Sharma, Dharma

    2003-01-01

    The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

  19. From Pixels to Planets

    NASA Technical Reports Server (NTRS)

    Brownston, Lee; Jenkins, Jon M.

    2015-01-01

    The Kepler Mission was launched in 2009 as NASAs first mission capable of finding Earth-size planets in the habitable zone of Sun-like stars. Its telescope consists of a 1.5-m primary mirror and a 0.95-m aperture. The 42 charge-coupled devices in its focal plane are read out every half hour, compressed, and then downlinked monthly. After four years, the second of four reaction wheels failed, ending the original mission. Back on earth, the Science Operations Center developed the Science Pipeline to analyze about 200,000 target stars in Keplers field of view, looking for evidence of periodic dimming suggesting that one or more planets had crossed the face of its host star. The Pipeline comprises several steps, from pixel-level calibration, through noise and artifact removal, to detection of transit-like signals and the construction of a suite of diagnostic tests to guard against false positives. The Kepler Science Pipeline consists of a pipeline infrastructure written in the Java programming language, which marshals data input to and output from MATLAB applications that are executed as external processes. The pipeline modules, which underwent continuous development and refinement even after data started arriving, employ several analytic techniques, many developed for the Kepler Project. Because of the large number of targets, the large amount of data per target and the complexity of the pipeline algorithms, the processing demands are daunting. Some pipeline modules require days to weeks to process all of their targets, even when run on NASA's 128-node Pleiades supercomputer. The software developers are still seeking ways to increase the throughput. To date, the Kepler project has discovered more than 4000 planetary candidates, of which more than 1000 have been independently confirmed or validated to be exoplanets. Funding for this mission is provided by NASAs Science Mission Directorate.

  20. Pixel multichip module design for a high energy physics experiment

    SciTech Connect

    Guilherme Cardoso et al.

    2003-11-05

    At Fermilab, a pixel detector multichip module is being developed for the BTeV experiment. The module is composed of three layers. The lowest layer is formed by the readout integrated circuits (ICs). The back of the ICs is in thermal contact with the supporting structure, while the top is flip-chip bump-bonded to the pixel sensor. A low mass flex-circuit interconnect is glued on the top of this assembly, and the readout IC pads are wire-bounded to the circuit. This paper presents recent results on the development of a multichip module prototype and summarizes its performance characteristics.

  1. Development of a high density pixel multichip module at Fermilab

    SciTech Connect

    Sergio Zimmermann et al.

    2001-09-11

    At Fermilab, a pixel detector multichip module is being developed for the BTeV experiment. The module is composed of three layers. The lowest layer is formed by the readout integrated circuits (ICs). The back of the ICs is in thermal contact with the supporting structure, while the top is flip-chip bump-bonded to the pixel sensor. A low mass flex-circuit interconnect is glued on the top of this assembly, and the readout IC pads are wire-bounded to the circuit. This paper presents recent results on the development of a multichip module prototype and summarizes its performance characteristics.

  2. High-voltage pixel sensors for ATLAS upgrade

    NASA Astrophysics Data System (ADS)

    Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

    2014-11-01

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  3. CCD sensors in synchrotron X-ray detectors

    NASA Astrophysics Data System (ADS)

    Strauss, M. G.; Naday, I.; Sherman, I. S.; Kraimer, M. R.; Westbrook, E. M.; Zaluzec, N. J.

    1988-04-01

    The intense photon flux from advanced synchrotron light sources, such as the 7-GeV synchrotron being designed at Argonne, require integrating-type detectors. Charge-coupled devices (CCDs) are well suited as synchrotron X-ray detectors. When irradiated indirectly via a phosphor followed by reducing optics, diffraction patterns of 100 cm 2 can be imaged on a 2 cm 2 CCD. With a conversion efficiency of ˜ 1 CCD electron/X-ray photon, a peak saturation capacity of > 10 6 X-rays can be obtained. A programmable CCD controller operating at a clock frequency of 20 MHz has been developed. The readout rate is 5 × 10 6 pixels/s and the shift rate in the parallel registers is 10 6 lines/s. The test detector was evaluated in two experiments. In protein crystallography diffraction patterns have been obtained from a lysozyme crystal using a conventional rotating anode X-ray generator. Based on these results we expect to obtain at a synchrotron diffraction images at a rate of ˜ 1 frame/s or a complete 3-dimensional data set from a single crystal in ˜ 2 min. In electron energy-loss spectroscopy (EELS), the CCD was used in a parallel detection mode which is similar to the mode array detectors are used in dispersive EXAFS. With a beam current corresponding to 3 × 10 9 electron/s on the detector, a series of 64 spectra were recorded on the CCD in a continuous sequence without interruption due to readout. The frame-to-frame pixel signal fluctuations had σ = 0.4% from which DQE = 0.4 was obtained, where the detector conversion efficiency was 2.6 CCD electrons/X-ray photon. These multiple frame series also showed the time-resolved modulation of the electron microscope optics by stray magnetic fields.

  4. Development of a DC-DC conversion powering scheme for the CMS Phase-1 pixel upgrade

    NASA Astrophysics Data System (ADS)

    Feld, L.; Fimmers, C.; Karpinski, W.; Klein, K.; Lipinski, M.; Preuten, M.; Rauch, M.; Rittich, D.; Sammet, J.; Wlochal, M.

    2014-01-01

    A novel powering scheme based on the DC-DC conversion technique will be exploited to power the CMS Phase-1 pixel detector. DC-DC buck converters for the CMS pixel project have been developed, based on the AMIS5 ASIC designed by CERN. The powering system of the Phase-1 pixel detector is described and the performance of the converter prototypes is detailed, including power efficiency, stability of the output voltage, shielding, and thermal management. Results from a test of the magnetic field tolerance of the DC-DC converters are reported. System tests with pixel modules using many components of the future pixel barrel system are summarized. Finally first impressions from a pre-series of 200 DC-DC converters are presented.

  5. Introducing sub-wavelength pixel THz camera for the understanding of close pixel-to-wavelength imaging challenges

    NASA Astrophysics Data System (ADS)

    Bergeron, A.; Marchese, L.; Bolduc, M.; Terroux, M.; Dufour, D.; Savard, E.; Tremblay, B.; Oulachgar, H.; Doucet, M.; Le Noc, L.; Alain, C.; Jerominek, H.

    2012-06-01

    Conventional guidelines and approximations useful in macro-scale system design can become invalidated when applied to the smaller scales. An illustration of this is when camera pixel size becomes smaller than the diffraction-limited resolution of the incident light. It is sometimes believed that there is no benefit in having a pixel width smaller than the resolving limit defined by the Raleigh criterion, 1.22 λ F/#. Though this rarely occurs in today's imaging technology, terahertz (THz) imaging is one emerging area where the pixel dimensions can be made smaller than the imaging wavelength. With terahertz camera technology, we are able to achieve sub-wavelength pixel sampling pitch, and therefore capable of directly measuring if there are image quality benefits to be derived from sub-wavelength sampling. Interest in terahertz imaging is high due to potential uses in security applications because of the greater penetration depth of terahertz radiation compared to the infrared and the visible. This paper discusses the modification by INO of its infrared MEMS microbolometer detector technology toward a THz imaging platform yielding a sub-wavelength pixel THz camera. Images obtained with this camera are reviewed in this paper. Measurements were also obtained using microscanning to increase sampling resolution. Parameters such as imaging resolution and sampling are addressed. A comparison is also made with results obtained with an 8-12 μm band camera having a pixel pitch close to the diffractionlimit.

  6. The DC-DC conversion power system of the CMS Phase-1 pixel upgrade

    NASA Astrophysics Data System (ADS)

    Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Preuten, M.; Rauch, M.; Schmitz, St.; Wlochal, M.

    2015-01-01

    The pixel detector of the CMS experiment will be exchanged during the year-end technical stop in 2016/2017, as part of the experiment's Phase-1 upgrade. The new device will feature approximately twice the number of readout channels, and consequently the power consumption will be doubled. By moving to a DC-DC conversion powering scheme, it is possible to power the new pixel detector with the existing power supplies and cable plant. The power system of the Phase-1 pixel detector is described and the performance of the new components, including DC-DC converters, DC-DC converter motherboards and various power distribution boards, is detailed. The outcome of system tests in terms of electrical behaviour, thermal management and pixel module performance is discussed.

  7. A DC-DC conversion powering scheme for the CMS Phase-1 pixel upgrade

    NASA Astrophysics Data System (ADS)

    Feld, L.; Fleck, M.; Friedrichs, M.; Hensch, R.; Karpinski, W.; Klein, K.; Sammet, J.; Wlochal, M.

    2013-02-01

    The CMS pixel detector was designed for a nominal instantaneous LHC luminosity of 1ṡ1034 cm-2s-1. During Phase-1 of the LHC upgrade, the instantaneous luminosity will be increased to about twice this value. To preserve the excellent performance of the pixel detector despite the increase in particle rates and track densities, the CMS Collaboration foresees the exchange of its pixel detector in the shutdown 2016/2017. The new pixel detector will be improved in many respects, and will comprise twice the number of readout channels. A powering scheme based on DC-DC conversion will be adopted, which will enable the provision of the required power with the present cable plant. The powering scheme of the CMS pixel detector will be described, and the performance of prototype DC-DC buck converters will be presented, including power efficiency, system tests with DC-DC converters and pixel modules, thermal management, reliability at low temperature, and studies of potential frequency locking between DC-DC converters.

  8. XPAD3-S: A fast hybrid pixel readout chip for X-ray synchrotron facilities

    NASA Astrophysics Data System (ADS)

    Pangaud, Patrick; Basolo, Stephanie; Boudet, Nathalie; Berar, Jean-François; Chantepie, Benoît; Clemens, Jean-Claude; Delpierre, Pierre; Dinkespiler, Bernard; Medjoubi, Kadda; Hustache, Stephanie; Menouni, Mohsine; Morel, Christian

    2008-06-01

    At X-ray synchrotron facilities, scattering experiments require detectors with a large sensitive surface, an high count rate capability, a large counter dynamics, a fast readout system and an adjustable energy threshold. X-ray pixel chip with adaptable dynamics (XPAD3) is a new pixellized photon detector based on hybrid pixel technology, which provides low noise data readout at high speed. It is designed in 0.25 μm IBM technology and contains 9600 pixels (130 μm×130 μm) distributed into 80 columns of 120 elements each. Its features have been optimized to fulfill a count rate capability up to 10 +6 photons/pixel/s, an high dynamic range over 35 keV, a very low noise of 130e -, and a threshold adjustment well below 4 keV. Fast data readout below 2 ms/frame is expected. To meet these requirements, an innovative architecture has been designed that makes possible the readout the circuit during acquisition while preserving the precise setting of the thresholds all over the pixel array. The XPAD3 circuit can be bump-bonded with Si, CdTe, or GaAs sensors to optimize its detection efficiency at high X-ray energies. XPAD3 detector modules will be tiled together to form the XPIX detector with a 8 cm×12 cm sensitive area. We present first results obtained using a single-chip prototype of the XPAD3 detector.

  9. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    SciTech Connect

    Heath, Robert M. Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-02-10

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime.

  10. Local Pixel Bundles: Bringing the Pixels to the People

    NASA Astrophysics Data System (ADS)

    Anderson, Jay

    2014-12-01

    The automated galaxy-based alignment software package developed for the Frontier Fields program (hst2galign, see Anderson & Ogaz 2014 and http://www.stsci.edu/hst/campaigns/frontier-fields/) produces a direct mapping from the pixels of the flt frame of each science exposure into a common master frame. We can use these mappings to extract the flt-pixels in the vicinity of a source of interest and package them into a convenient "bundle". In addition to the pixels, this data bundle can also contain "meta" information that will allow users to transform positions from the flt pixels to the reference frame and vice-versa. Since the un-resampled pixels in the flt frames are the only true constraints we have on the astronomical scene, the ability to inter-relate these pixels will enable many high-precision studies, such as: point-source-fitting and deconvolution with accurate PSFs, easy exploration of different image-combining algorithms, and accurate faint-source finding and photometry. The data products introduced in this ISR are a very early attempt to provide the flt-level pixel constraints in a package that is accessible to more than the handful of experts in HST astrometry. The hope is that users in the community might begin using them and will provide feedback as to what information they might want to see in the bundles and what general analysis packages they might find useful. For that reason, this document is somewhat informally written, since I know that it will be modified and updated as the products and tools are optimized.

  11. Detectability of simulated interstitial pneumonia on chest radiographs: comparison between irradiation side sampling indirect flat-panel detector and computed radiography

    PubMed Central

    Yabuuchi, H; Kairada, A; Tanaka, N; Morishita, J; Akasaka, T; Matsuo, Y; Kamitani, T; Yamasaki, Y; Nagao, M; Sasaki, M

    2014-01-01

    Objective: To compare the detectability of simulated interstitial pneumonia on chest radiographs between an irradiation side sampling indirect flat-panel detector (ISS-FPD) and computed radiography (CR). Methods: Simulated interstitial pneumonia findings (ground-glass opacity, reticular opacity and honeycomb lung) were superimposed on an anthropomorphic chest phantom. Chest radiographs were acquired under three exposure levels (4.0, 3.2 and 2.0 mAs) with an ISS-FPD and with CR. 5 thoracic radiologists evaluated 72 images for the presence or absence of a lesion over each of 6 areas. A total of 1296 observations were analysed in a receiver–operating characteristic analysis. A jackknife method was used for the statistical analysis. Results: The areas under the curves (AUCs) for the detection of simulated honeycomb lung obtained with the ISS-FPD were significantly larger than those obtained with CR at all exposure conditions. For the detection of simulated ground-glass opacity and reticular opacity, there were no significant differences between the two systems. In addition, the AUCs for the detectability of simulated honeycomb lung obtained with the ISS-FPD at all exposure levels were significantly larger than those obtained with CR at 4 mAs. Conclusion: The ISS-FPD was superior to CR for the detection of simulated honeycomb lung. Provided that the chosen model is representative of interstitial pneumonia, the use of an ISS-FPD might reduce a patient's exposure dose during the detection of interstitial pneumonia. Advances in knowledge: The ISS-FPD has shown its advantage compared with CR in the detection of honeycombing, one sign of interstitial pneumonia. PMID:24874767

  12. Edge effects in a small pixel CdTe for X-ray imaging

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

    2013-10-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

  13. Introducing a 384x288 pixel terahertz camera core

    NASA Astrophysics Data System (ADS)

    Chevalier, C.; Mercier, L.,; Duchesne, F.; Gagnon, L.; Tremblay, B.; Terroux, M.; Généreux, F.; Paultre, J.-E.; Provençal, F.; Desroches, Y.; Marchese, L.; Jerominek, H.; Alain, C.; Bergeron, A.

    2013-03-01

    Terahertz is a field in expansion with the emergence of various security needs such as parcel inspection and through-camouflage vision. Terahertz wavebands are characterized by long wavelengths compared to the traditional infrared and visible spectra. However, it has recently been demonstrated that a 52 μm pixel pitch microscanned down to an efficient sampling pitch of 26 μm could provide useful information even using a 118.83 μm wavelength. With this in mind, INO has developed a terahertz camera core based on a 384x288 pixel 35 μm pixel pitch uncooled bolometric terahertz detector. The camera core provides full 16-bit output video rate.

  14. Planar pixel sensors for the ATLAS upgrade: beam tests results

    NASA Astrophysics Data System (ADS)

    Weingarten, J.; Altenheiner, S.; Beimforde, M.; Benoit, M.; Bomben, M.; Calderini, G.; Gallrapp, C.; George, M.; Gibson, S.; Grinstein, S.; Janoska, Z.; Jentzsch, J.; Jinnouchi, O.; Kishida, T.; La Rosa, A.; Libov, V.; Macchiolo, A.; Marchiori, G.; Muenstermann, D.; Nagai, R.; Piacquadio, G.; Ristic, B.; Rubinskiy, I.; Rummler, A.; Takubo, Y.; Troska, G.; Tsiskaridtze, S.; Tsurin, I.; Unno, Y.; Weigell, P.; Wittig, T.

    2012-10-01

    The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.

  15. Efficient single pixel imaging in Fourier space

    NASA Astrophysics Data System (ADS)

    Bian, Liheng; Suo, Jinli; Hu, Xuemei; Chen, Feng; Dai, Qionghai

    2016-08-01

    Single pixel imaging (SPI) is a novel technique capturing 2D images using a bucket detector with a high signal-to-noise ratio, wide spectrum range and low cost. Conventional SPI projects random illumination patterns to randomly and uniformly sample the entire scene’s information. Determined by Nyquist sampling theory, SPI needs either numerous projections or high computation cost to reconstruct the target scene, especially for high-resolution cases. To address this issue, we propose an efficient single pixel imaging technique (eSPI), which instead projects sinusoidal patterns for importance sampling of the target scene’s spatial spectrum in Fourier space. Specifically, utilizing the centrosymmetric conjugation and sparsity priors of natural images’ spatial spectra, eSPI sequentially projects two \\tfrac{π }{2}-phase-shifted sinusoidal patterns to obtain each Fourier coefficient in the most informative spatial frequency bands. eSPI can reduce requisite patterns by two orders of magnitude compared to conventional SPI, which helps a lot for fast and high-resolution SPI.

  16. Measurement results of DIPIX pixel sensor developed in SOI technology

    NASA Astrophysics Data System (ADS)

    Ahmed, Mohammed Imran; Arai, Yasuo; Idzik, Marek; Kapusta, Piotr; Miyoshi, Toshinobu; Turala, Michal

    2013-08-01

    The development of integration type pixel detectors presents interest for physics communities because it brings optimization of design, simplicity of production-which means smaller cost, and reduction of detector material budget. During the last decade a lot of research and development activities took place in the field of CMOS Silicon-On-Insulator (SOI) technology resulting in improvement in wafer size, wafer resistivity and MIM capacitance. Several ideas have been tested successfully and are gradually entering into the application phase. Some of the novel concepts exploring SOI technology are pursued at KEK; several prototypes of dual mode integration type pixel (DIPIX) have been recently produced and described. This report presents initial test results of some of the prototypes including tests obtained with the infrared laser beams and Americium (Am-241) source. The Equivalent Noise Charge (ENC) of 86 e - has been measured. The measured performance demonstrates that SOI technology is a feasible choice for future applications.

  17. How big is an OMI pixel?

    NASA Astrophysics Data System (ADS)

    de Graaf, Martin; Sihler, Holger; Tilstra, Lieuwe G.; Stammes, Piet

    2016-08-01

    The Ozone Monitoring Instrument (OMI) is a push-broom imaging spectrometer, observing solar radiation backscattered by the Earth's atmosphere and surface. The incoming radiation is detected using a static imaging CCD (charge-coupled device) detector array with no moving parts, as opposed to most of the previous satellite spectrometers, which used a moving mirror to scan the Earth in the across-track direction. The field of view (FoV) of detector pixels is the solid angle from which radiation is observed, averaged over the integration time of a measurement. The OMI FoV is not quadrangular, which is common for scanning instruments, but rather super-Gaussian shaped and overlapping with the FoV of neighbouring pixels. This has consequences for pixel-area-dependent applications, like cloud fraction products, and visualisation.The shapes and sizes of OMI FoVs were determined pre-flight by theoretical and experimental tests but never verified after launch. In this paper the OMI FoV is characterised using collocated MODerate resolution Imaging Spectroradiometer (MODIS) reflectance measurements. MODIS measurements have a much higher spatial resolution than OMI measurements and spectrally overlap at 469 nm. The OMI FoV was verified by finding the highest correlation between MODIS and OMI reflectances in cloud-free scenes, assuming a 2-D super-Gaussian function with varying size and shape to represent the OMI FoV. Our results show that the OMPIXCOR product 75FoV corner coordinates are accurate as the full width at half maximum (FWHM) of a super-Gaussian FoV model when this function is assumed. The softness of the function edges, modelled by the super-Gaussian exponents, is different in both directions and is view angle dependent.The optimal overlap function between OMI and MODIS reflectances is scene dependent and highly dependent on time differences between overpasses, especially with clouds in the scene. For partially clouded scenes, the optimal overlap function was

  18. Simulation of charge transport in pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  19. Looking at single photons using hybrid detectors

    NASA Astrophysics Data System (ADS)

    Bergamaschi, A.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jungmann-Smith, J. H.; Mezza, D.; Mozzanica, A.; Schmitt, B.; Shi, X.; Tinti, G.

    2015-01-01

    The SLS detector group develops silicon hybrid detectors for X-ray applications used in synchrotron facilities all over the world. Both microstrip and pixel detectors with either single photon counting or charge integrating read out are being developed. Low noise charge integrating detectors can be operated in single photon regime, i.e. with low fluxes and high frame rates in order to detect on average less than one photon per cluster of 2×2 pixels. In this case, the analog signal read out for each single X-ray provides information about the energy of the photon. Moreover the signal from neighboring channels can be correlated in order to overcome or even take advantage of charge sharing. The linear charge collection model describing microstrip detectors and large pixels is unsuitable for the calibration of small pitch pixel detectors due to the large amount of charge sharing occurring also in the corner region. For this reason, the linear charge collection model is extended to the case of small pixels and tested with monochromatic X-ray data acquired using the 25 μm pitch MÖNCH and the 75 μm pitch JUNGFRAU detectors. The successful outcome of the calibration of the MÖNCH detector is proven by the high energy resolution of the spectrum obtained by accumulating the counts from more than 6000 channels after the correction of the gain mismatches using the proposed model.

  20. Reading a GEM with a VLSI pixel ASIC used as a direct charge collecting anode

    NASA Astrophysics Data System (ADS)

    Bellazzini, R.; Angelini, F.; Baldini, L.; Bitti, F.; Brez, A.; Ceccanti, M.; Latronico, L.; Massai, M. M.; Minuti, M.; Omodei, N.; Razzano, M.; Sgro, C.; Spandre, G.; Costa, E.; Soffitta, P.

    2004-12-01

    In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 micron and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the individual pixel to the external electronics chain. For this reason a custom CMOS array of 2101 active pixels with 80 micron pitch, directly used as the charge collecting anode of a GEM amplifying structure, has been developed and built. Each charge collecting pad, hexagonally shaped, realized using the top metal layer of a deep submicron VLSI technology is individually connected to a full electronics chain (pre-amplifier, shaping-amplifier, sample and hold, multiplexer) which is built immediately below it by using the remaining five active layers. The GEM and the drift electrode window are assembled directly over the chip so the ASIC itself becomes the pixelized anode of a MicroPattern Gas Detector. With this approach, for the first time, gas detectors have reached the level of integration and resolution typical of solid state pixel detectors. Results from the first tests of this new read-out concept are presented. An Astronomical X-Ray Polarimetry application is also discussed.