A Medipix3 readout system based on the National Instruments FlexRIO card and using the LabVIEW programming environment

NASA Astrophysics Data System (ADS)

Horswell, I.; Gimenez, E. N.; Marchal, J.; Tartoni, N.

2011-01-01

Hybrid silicon photon-counting detectors are becoming standard equipment for many synchrotron applications. The latest in the Medipix family of read-out chips designed as part of the Medipix Collaboration at CERN is the Medipix3, which while maintaining the same pixel size as its predecessor, offers increased functionality and operating modes. The active area of the Medipix3 chip is approx 14mm × 14mm (containing 256 × 256 pixels) which is not large enough for many detector applications, this results in the need to tile many sensors and chips. As a first step on the road to develop such a detector, it was decided to build a prototype single chip readout system to gain the necessary experience in operating a Medipix3 chip. To provide a flexible learning and development tool it was decided to build an interface based on the recently released FlexRIOTM system from National Instruments and to use the LabVIEWTM graphical programming environment. This system and the achieved performance are described in this paper.

Precision tracking with a single gaseous pixel detector

NASA Astrophysics Data System (ADS)

Tsigaridas, S.; van Bakel, N.; Bilevych, Y.; Gromov, V.; Hartjes, F.; Hessey, N. P.; de Jong, P.; Kluit, R.

2015-09-01

The importance of micro-pattern gaseous detectors has grown over the past few years after successful usage in a large number of applications in physics experiments and medicine. We develop gaseous pixel detectors using micromegas-based amplification structures on top of CMOS pixel readout chips. Using wafer post-processing we add a spark-protection layer and a grid to create an amplification region above the chip, allowing individual electrons released above the grid by the passage of ionising radiation to be recorded. The electron creation point is measured in 3D, using the pixel position for (x, y) and the drift time for z. The track can be reconstructed by fitting a straight line to these points. In this work we have used a pixel-readout-chip which is a small-scale prototype of Timepix3 chip (designed for both silicon and gaseous detection media). This prototype chip has several advantages over the existing Timepix chip, including a faster front-end (pre-amplifier and discriminator) and a faster TDC which reduce timewalk's contribution to the z position error. Although the chip is very small (sensitive area of 0.88 × 0.88mm2), we have built it into a detector with a short drift gap (1.3 mm), and measured its tracking performance in an electron beam at DESY. We present the results obtained, which lead to a significant improvement for the resolutions with respect to Timepix-based detectors.

The FE-I4 Pixel Readout Chip and the IBL Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barbero, Marlon; Arutinov, David; Backhaus, Malte

2012-05-01

FE-I4 is the new ATLAS pixel readout chip for the upgraded ATLAS pixel detector. Designed in a CMOS 130 nm feature size process, the IC is able to withstand higher radiation levels compared to the present generation of ATLAS pixel Front-End FE-I3, and can also cope with higher hit rate. It is thus suitable for intermediate radii pixel detector layers in the High Luminosity LHC environment, but also for the inserted layer at 3.3 cm known as the 'Insertable B-Layer' project (IBL), at a shorter timescale. In this paper, an introduction to the FE-I4 will be given, focusing on testmore » results from the first full size FE-I4A prototype which has been available since fall 2010. The IBL project will be introduced, with particular emphasis on the FE-I4-based module concept.« less

Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

NASA Astrophysics Data System (ADS)

Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

2017-01-01

A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

A system for characterization of DEPFET silicon pixel matrices and test beam results

NASA Astrophysics Data System (ADS)

Furletov, Sergey; DEPFET Collaboration

2011-02-01

The DEPFET pixel detector offers first stage in-pixel amplification by incorporating a field effect transistor in the high resistivity silicon substrate. In this concept, a very small input capacitance can be realized thus allowing for low noise measurements. This makes DEPFET sensors a favorable technology for tracking in particle physics. Therefore a system with a DEPFET pixel matrix was developed to test DEPFET performance for an application as a vertex detector for the Belle II experiment. The system features a current based, row-wise readout of a DEPFET pixel matrix with a designated readout chip, steering chips for matrix control, a FPGA based data acquisition board, and a dedicated software package. The system was successfully operated in both test beam and lab environment. In 2009 new DEPFET matrices have been characterized in a 120 GeV pion beam at the CERN SPS. The current status of the DEPFET system and test beam results are presented.

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

A UVM simulation environment for the study, optimization and verification of HL-LHC digital pixel readout chips

NASA Astrophysics Data System (ADS)

Marconi, S.; Conti, E.; Christiansen, J.; Placidi, P.

2018-05-01

The operating conditions of the High Luminosity upgrade of the Large Hadron Collider are very demanding for the design of next generation hybrid pixel readout chips in terms of particle rate, radiation level and data bandwidth. To this purpose, the RD53 Collaboration has developed for the ATLAS and CMS experiments a dedicated simulation and verification environment using industry-consolidated tools and methodologies, such as SystemVerilog and the Universal Verification Methodology (UVM). This paper presents how the so-called VEPIX53 environment has first guided the design of digital architectures, optimized for processing and buffering very high particle rates, and secondly how it has been reused for the functional verification of the first large scale demonstrator chip designed by the collaboration, which has recently been submitted.

Photon counting readout pixel array in 0.18-μm CMOS technology for on-line gamma-ray imaging of 103palladium seeds for permanent breast seed implant (PBSI) brachytherapy

NASA Astrophysics Data System (ADS)

Goldan, A. H.; Karim, K. S.; Reznik, A.; Caldwell, C. B.; Rowlands, J. A.

2008-03-01

Permanent breast seed implant (PBSI) brachytherapy technique was recently introduced as an alternative to high dose rate (HDR) brachytherapy and involves the permanent implantation of radioactive 103Palladium seeds into the surgical cavity of the breast for cancer treatment. To enable accurate seed implantation, this research introduces a gamma camera based on a hybrid amorphous selenium detector and CMOS readout pixel architecture for real-time imaging of 103Palladium seeds during the PBSI procedure. A prototype chip was designed and fabricated in 0.18-μm n-well CMOS process. We present the experimental results obtained from this integrated photon counting readout pixel.

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.; Sato, Kz.; Sato, Kj.; Iwabuchi, S.; Suzuki, J.

2017-01-01

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

Germanium ``hexa'' detector: production and testing

NASA Astrophysics Data System (ADS)

Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Hirsemann, H.; Struth, B.; Fritzsch, T.; Rothermund, M.; Zuvic, M.; Lampert, M. O.; Askar, M.; Graafsma, H.

2017-01-01

Here we present new result on the testing of a Germanium sensor for X-ray radiation. The system is made of 3 × 2 Medipix3RX chips, bump-bonded to a monolithic sensor, and is called ``hexa''. Its dimensions are 45 × 30 mm2 and the sensor thickness was 1.5 mm. The total number of the pixels is 393216 in the matrix 768 × 512 with pixel pitch 55 μ m. Medipix3RX read-out chip provides photon counting read-out with single photon sensitivity. The sensor is cooled to -126°C and noise levels together with flat field response are measured. For -200 V polarization bias, leakage current was 4.4 mA (3.2 μ A/mm2). Due to higher leakage around 2.5% of all pixels stay non-responsive. More than 99% of all pixels are bump bonded correctly. In this paper we present the experimental set-up, threshold equalization procedure, image acquisition and the technique for bump bond quality estimate.

Fast Readout Architectures for Large Arrays of Digital Pixels: Examples and Applications

PubMed Central

Gabrielli, A.

2014-01-01

Modern pixel detectors, particularly those designed and constructed for applications and experiments for high-energy physics, are commonly built implementing general readout architectures, not specifically optimized in terms of speed. High-energy physics experiments use bidimensional matrices of sensitive elements located on a silicon die. Sensors are read out via other integrated circuits bump bonded over the sensor dies. The speed of the readout electronics can significantly increase the overall performance of the system, and so here novel forms of readout architectures are studied and described. These circuits have been investigated in terms of speed and are particularly suited for large monolithic, low-pitch pixel detectors. The idea is to have a small simple structure that may be expanded to fit large matrices without affecting the layout complexity of the chip, while maintaining a reasonably high readout speed. The solutions might be applied to devices for applications not only in physics but also to general-purpose pixel detectors whenever online fast data sparsification is required. The paper presents also simulations on the efficiencies of the systems as proof of concept for the proposed ideas. PMID:24778588

Direct reading of charge multipliers with a self-triggering CMOS analog chip with 105 k pixels at 50 μm pitch

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgro', C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-10-01

We report on a large area (15×15 mm2), high channel density (470 pixel/mm2), self-triggering CMOS analog chip that we have developed as a pixelized charge collecting electrode of a Micropattern Gas Detector. This device represents a big step forward both in terms of size and performance, and is in fact the last version of three generations of custom ASICs of increasing complexity. The top metal layer of the CMOS pixel array is patterned in a matrix of 105,600 hexagonal pixels with a 50 μm pitch. Each pixel is directly connected to the underlying full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a 0.18 μm VLSI technology. The chip, which has customizable self-triggering capabilities, also includes a signal pre-processing function for the automatic localization of the event coordinates. Thanks to these advances it is possible to significantly reduce the read-out time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. In addition to the reduced read-out time and data volume, the very small pixel area and the use of a deep sub-micron CMOS technology has allowed bringing the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50 μm on a triangular pattern) Gas Electron Multiplier are presented. It was found that matching the read-out and gas amplification pitch allows getting optimal results. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown and the application of this detector for Astronomical X-ray Polarimetry is discussed. Results from a full Monte-Carlo simulation for several galactic and extragalactic astronomical sources are also reported.

SPIDR, a general-purpose readout system for pixel ASICs

NASA Astrophysics Data System (ADS)

van der Heijden, B.; Visser, J.; van Beuzekom, M.; Boterenbrood, H.; Kulis, S.; Munneke, B.; Schreuder, F.

2017-02-01

The SPIDR (Speedy PIxel Detector Readout) system is a flexible general-purpose readout platform that can be easily adapted to test and characterize new and existing detector readout ASICs. It is originally designed for the readout of pixel ASICs from the Medipix/Timepix family, but other types of ASICs or front-end circuits can be read out as well. The SPIDR system consists of an FPGA board with memory and various communication interfaces, FPGA firmware, CPU subsystem and an API library on the PC . The FPGA firmware can be adapted to read out other ASICs by re-using IP blocks. The available IP blocks include a UDP packet builder, 1 and 10 Gigabit Ethernet MAC's and a "soft core" CPU . Currently the firmware is targeted at the Xilinx VC707 development board and at a custom board called Compact-SPIDR . The firmware can easily be ported to other Xilinx 7 series and ultra scale FPGAs. The gap between an ASIC and the data acquisition back-end is bridged by the SPIDR system. Using the high pin count VITA 57 FPGA Mezzanine Card (FMC) connector only a simple chip carrier PCB is required. A 1 and a 10 Gigabit Ethernet interface handle the connection to the back-end. These can be used simultaneously for high-speed data and configuration over separate channels. In addition to the FMC connector, configurable inputs and outputs are available for synchronization with other detectors. A high resolution (≈ 27 ps bin size) Time to Digital converter is provided for time stamping events in the detector. The SPIDR system is frequently used as readout for the Medipix3 and Timepix3 ASICs. Using the 10 Gigabit Ethernet interface it is possible to read out a single chip at full bandwidth or up to 12 chips at a reduced rate. Another recent application is the test-bed for the VeloPix ASIC, which is developed for the Vertex Detector of the LHCb experiment. In this case the SPIDR system processes the 20 Gbps scrambled data stream from the VeloPix and distributes it over four 10 Gigabit Ethernet links, and in addition provides the slow and fast control for the chip.

Twenty-four-micrometer-pitch microelectrode array with 6912-channel readout at 12 kHz via highly scalable implementation for high-spatial-resolution mapping of action potentials.

PubMed

Ogi, Jun; Kato, Yuri; Matoba, Yoshihisa; Yamane, Chigusa; Nagahata, Kazunori; Nakashima, Yusaku; Kishimoto, Takuya; Hashimoto, Shigeki; Maari, Koichi; Oike, Yusuke; Ezaki, Takayuki

2017-12-19

A 24-μm-pitch microelectrode array (MEA) with 6912 readout channels at 12 kHz and 23.2-μV rms random noise is presented. The aim is to reduce noise in a "highly scalable" MEA with a complementary metal-oxide-semiconductor integration circuit (CMOS-MEA), in which a large number of readout channels and a high electrode density can be expected. Despite the small dimension and the simplicity of the in-pixel circuit for the high electrode-density and the relatively large number of readout channels of the prototype CMOS-MEA chip developed in this work, the noise within the chip is successfully reduced to less than half that reported in a previous work, for a device with similar in-pixel circuit simplicity and a large number of readout channels. Further, the action potential was clearly observed on cardiomyocytes using the CMOS-MEA. These results indicate the high-scalability of the CMOS-MEA. The highly scalable CMOS-MEA provides high-spatial-resolution mapping of cell action potentials, and the mapping can aid understanding of complex activities in cells, including neuron network activities.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, TImothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nicholas P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Enabling Large Focal Plane Arrays through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Costen, Nick; Benford, Dominic J.

2012-01-01

We have demonstrated the hybridization of large mosaics of far-infrared detectors, joining separately fabricated sub-units into a single unit on a single, large substrate. We produced a single detector mockup on a 100mm diameter wafer and four mockup readout quadrant chips from a separate 100mm wafer. The individually fabricated parts were hybridized using a Suss FC150 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion (CTE) match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the mockup mosaic-hybridized detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently demonstrated.

High-voltage pixel sensors for ATLAS upgrade

NASA Astrophysics Data System (ADS)

Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

2014-11-01

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

JUNGFRAU 0.2: prototype characterization of a gain-switching, high dynamic range imaging system for photon science at SwissFEL and synchrotrons

NASA Astrophysics Data System (ADS)

Jungmann-Smith, J. H.; Bergamaschi, A.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Johnson, I.; Maliakal, D.; Mezza, D.; Mozzanica, A.; Ruder, Ch; Schaedler, L.; Schmitt, B.; Shi, X.; Tinti, G.

2014-12-01

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional pixel detector for photon science applications at free electron lasers and synchrotron light sources. It is developed for the SwissFEL currently under construction at the Paul Scherrer Institute, Switzerland. Characteristics of this application-specific integrating circuit readout chip include single photon sensitivity and low noise over a dynamic range of over four orders of magnitude of photon input signal. These characteristics are achieved by a three-fold gain-switching preamplifier in each pixel, which automatically adjusts its gain to the amount of charge deposited on the pixel. The final JUNGFRAU chip comprises 256 × 256 pixels of 75 × 75 μm2 each. Arrays of 2 × 4 chips are bump-bonded to monolithic detector modules of about 4 × 8 cm2. Multi-module systems up to 16 Mpixels are planned for the end stations at SwissFEL. A readout rate in excess of 2 kHz is anticipated, which serves the readout requirements of SwissFEL and enables high count rate synchrotron experiments with a linear count rate capability of > 20 MHz/pixel. Promising characterization results from a 3.6 × 3.6 mm2 prototype (JUNGFRAU 0.2) with fluorescence X-ray, infrared laser and synchrotron irradiation are shown. The results include an electronic noise as low as 100 electrons root-mean-square, which enables single photon detection down to X-ray energies of about 2 keV. Noise below the Poisson fluctuation of the photon number and a linearity error of the pixel response of about 1% are demonstrated. First imaging experiments successfully show automatic gain switching. The edge spread function of the imaging system proves to be comparable in quality to single photon counting hybrid pixel detectors.

An inverter-based capacitive trans-impedance amplifier readout with offset cancellation and temporal noise reduction for IR focal plane array

NASA Astrophysics Data System (ADS)

Chen, Hsin-Han; Hsieh, Chih-Cheng

2013-09-01

This paper presents a readout integrated circuit (ROIC) with inverter-based capacitive trans-impedance amplifier (CTIA) and pseudo-multiple sampling technique for infrared focal plane array (IRFPA). The proposed inverter-based CTIA with a coupling capacitor [1], executing auto-zeroing technique to cancel out the varied offset voltage from process variation, is used to substitute differential amplifier in conventional CTIA. The tunable detector bias is applied from a global external bias before exposure. This scheme not only retains stable detector bias voltage and signal injection efficiency, but also reduces the pixel area as well. Pseudo-multiple sampling technique [2] is adopted to reduce the temporal noise of readout circuit. The noise reduction performance is comparable to the conventional multiple sampling operation without need of longer readout time proportional to the number of samples. A CMOS image sensor chip with 55×65 pixel array has been fabricated in 0.18um CMOS technology. It achieves a 12um×12um pixel size, a frame rate of 72 fps, a power-per-pixel of 0.66uW/pixel, and a readout temporal noise of 1.06mVrms (16 times of pseudo-multiple sampling), respectively.

Status and Plan for The Upgrade of The CMS Pixel Detector

NASA Astrophysics Data System (ADS)

Lu, Rong-Shyang; CMS Collaboration

2016-04-01

The silicon pixel detector is the innermost component of the CMS tracking system and plays a crucial role in the all-silicon CMS tracker. While the current pixel tracker is designed for and performing well at an instantaneous luminosity of up to 1 ×1034cm-2s-1, it can no longer be operated efficiently at significantly higher values. Based on the strong performance of the LHC accelerator, it is anticipated that peak luminosities of two times the design luminosity are likely to be reached before 2018 and perhaps significantly exceeded in the running period until 2022, referred to as LHC Run 3. Therefore, an upgraded pixel detector, referred to as the phase 1 upgrade, is planned for the year-end technical stop in 2016. With a new pixel readout chip (ROC), an additional fourth layer, two additional endcap disks, and a significantly reduced material budget the upgraded pixel detector will be able to sustain the efficiency of the pixel tracker at the increased requirements imposed by high luminosities and pile-up. The main new features of the upgraded pixel detector will be an ultra-light mechanical design, a digital readout chip with higher rate capability and a new cooling system. These and other design improvements, along with results of Monte Carlo simulation studies for the expected performance of the new pixel detector, will be discussed and compared to those of the current CMS detector.

Development of a cylindrical tracking detector with multichannel scintillation fibers and pixelated photon detector readout

NASA Astrophysics Data System (ADS)

Akazawa, Y.; Miwa, K.; Honda, R.; Shiozaki, T.; Chiga, N.

2015-07-01

We are developing a cylindrical tracking detector for a Σp scattering experiment in J-PARC with scintillation fibers and the Pixelated Photon Detector (PPD) readout, which is called as cylindrical fiber tracker (CFT), in order to reconstruct trajectories of charged particles emitted inside CFT. CFT works not only as a tracking detector but also a particle identification detector from energy deposits. A prototype CFT consisting of two straight layers and one spiral layer was constructed. About 1100 scintillation fibers with a diameter of 0.75 mm (Kuraray SCSF-78 M) were used. Each fiber signal was read by Multi-Pixel Photon Counter (MPPC, HPK S10362-11-050P, 1×1 mm2, 400 pixels) fiber by fiber. MPPCs were handled with Extended Analogue Silicon Photomultipliers Integrated ReadOut Chip (EASIROC) boards, which were developed for the readout of a large number of MPPCs. The energy resolution of one layer was 28% for a 70 MeV proton where the energy deposit in fibers was 0.7 MeV.

Hit efficiency study of CMS prototype forward pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongwook; /Johns Hopkins U.

2006-01-01

In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

An asynchronous data-driven readout prototype for CEPC vertex detector

NASA Astrophysics Data System (ADS)

Yang, Ping; Sun, Xiangming; Huang, Guangming; Xiao, Le; Gao, Chaosong; Huang, Xing; Zhou, Wei; Ren, Weiping; Li, Yashu; Liu, Jianchao; You, Bihui; Zhang, Li

2017-12-01

The Circular Electron Positron Collider (CEPC) is proposed as a Higgs boson and/or Z boson factory for high-precision measurements on the Higgs boson. The precision of secondary vertex impact parameter plays an important role in such measurements which typically rely on flavor-tagging. Thus silicon CMOS Pixel Sensors (CPS) are the most promising technology candidate for a CEPC vertex detector, which can most likely feature a high position resolution, a low power consumption and a fast readout simultaneously. For the R&D of the CEPC vertex detector, we have developed a prototype MIC4 in the Towerjazz 180 nm CMOS Image Sensor (CIS) process. We have proposed and implemented a new architecture of asynchronous zero-suppression data-driven readout inside the matrix combined with a binary front-end inside the pixel. The matrix contains 128 rows and 64 columns with a small pixel pitch of 25 μm. The readout architecture has implemented the traditional OR-gate chain inside a super pixel combined with a priority arbiter tree between the super pixels, only reading out relevant pixels. The MIC4 architecture will be introduced in more detail in this paper. It will be taped out in May and will be characterized when the chip comes back.

Microwave SQUID Multiplexing of Metallic Magnetic Calorimeters: Status of Multiplexer Performance and Room-Temperature Readout Electronics Development

NASA Astrophysics Data System (ADS)

Wegner, M.; Karcher, N.; Krömer, O.; Richter, D.; Ahrens, F.; Sander, O.; Kempf, S.; Weber, M.; Enss, C.

2018-02-01

To our present best knowledge, microwave SQUID multiplexing (μ MUXing) is the most suitable technique for reading out large-scale low-temperature microcalorimeter arrays that consist of hundreds or thousands of individual pixels which require a large readout bandwidth per pixel. For this reason, the present readout strategy for metallic magnetic calorimeter (MMC) arrays combining an intrinsic fast signal rise time, an excellent energy resolution, a large energy dynamic range, a quantum efficiency close to 100% as well as a highly linear detector response is based on μ MUXing. Within this paper, we summarize the state of the art in MMC μ MUXing and discuss the most recent results. This particularly includes the discussion of the performance of a 64-pixel detector array with integrated, on-chip microwave SQUID multiplexer, the progress in flux ramp modulation of MMCs as well as the status of the development of a software-defined radio-based room-temperature electronics which is specifically optimized for MMC readout.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nick P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic J.

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit patbs by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabric.ted parts were hybridized using a Suss FCI50 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

Gossip: Gaseous pixels

NASA Astrophysics Data System (ADS)

Koffeman, E. N.

2007-12-01

Several years ago a revolutionary miniature TPC was developed using a pixel chip with a Micromegas foil spanned over it. To overcome the mechanical stability problems and improve the positioning accuracy while spanning a foil on top of a small readout chip a process has been developed in which a Micromegas-like grid is applied on a CMOS wafer in a post-processing step. This aluminum grid is supported on insulating pillars that are created by etching after the grid has been made. The energy resolution (measured on the absorption of the X-rays from a 55Fe source) was remarkably good. Several geometries have since been tested and we now believe that a Gas On Slimmed Silicon Pixel chip' (Gossip) may be realized. The drift region of such a gaseous pixel detector would be reduced to a millimeter. Such a detector is potentially very radiation hard (SLHC vertexing) but aging and sparking must be eliminated.

Zero suppression logic of the ALICE muon forward tracker pixel chip prototype PIXAM and associated readout electronics development

NASA Astrophysics Data System (ADS)

Flouzat, C.; Değerli, Y.; Guilloux, F.; Orsini, F.; Venault, P.

2015-05-01

In the framework of the ALICE experiment upgrade at HL-LHC, a new forward tracking detector, the Muon Forward Tracker (MFT), is foreseen to overcome the intrinsic limitations of the present Muon Spectrometer and will perform new measurements of general interest for the whole ALICE physics. To fulfill the new detector requirements, CMOS Monolithic Active Pixel Sensors (MAPS) provide an attractive trade-off between readout speed, spatial resolution, radiation hardness, granularity, power consumption and material budget. This technology has been chosen to equip the Muon Forward Tracker and also the vertex detector: the Inner Tracking System (ITS). Since few years, an intensive R&D program has been performed on the design of MAPS in the 0.18 μ m CMOS Image Sensor (CIS) process. In order to avoid pile up effects in the experiment, the classical rolling shutter readout system of MAPS has been improved to overcome the readout speed limitation. A zero suppression algorithm, based on a 3 by 3 cluster finding (position and data), has been chosen for the MFT. This algorithm allows adequate data compression for the sensor. This paper presents the large size prototype PIXAM, which represents 1/3 of the final chip, and will focus specially on the zero suppression block architecture. This chip is designed and under fabrication in the 0.18 μ m CIS process. Finally, the readout electronics principle to send out the compressed data flow is also presented taking into account the cluster occupancy per MFT plane for a single central Pb-Pb collision.

A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources

NASA Astrophysics Data System (ADS)

Lodola, L.; Ratti, L.; Comotti, D.; Fabris, L.; Grassi, M.; Malcovati, P.; Manghisoni, M.; Re, V.; Traversi, G.; Vacchi, C.; Batignani, G.; Bettarini, S.; Forti, F.; Casarosa, G.; Morsani, F.; Paladino, A.; Paoloni, E.; Rizzo, G.; Benkechkache, M. A.; Dalla Betta, G.-F.; Mendicino, R.; Pancheri, L.; Verzellesi, G.; Xu, H.

2017-08-01

The PixFEL collaboration has developed the building blocks for an X-ray imager to be used in applications at FELs. In particular, slim edge pixel detectors with high detection efficiency over a broad energy range, from 1 to 12 keV, have been developed. Moreover, a multichannel readout chip, called PFM2 (PixFEL front-end Matrix 2) and consisting of 32 × 32 cells, has been designed and fabricated in a 65 nm CMOS technology. The pixel pitch is 110 μm, the overall area is around 16 mm2. In the chip, different solutions have been implemented for the readout channel, which includes a charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaper and an A-to-D converter with a 10 bit resolution. The CSA can be configured in four different gain modes, so as to comply with photon energies in the 1 to 10 keV range. The paper will describe in detail the channel architecture and present the results from the characterization of PFM2. It will discuss the design of a new version of the chip, called PFM3, suitable for post-processing with peripheral, under-pad through silicon vias (TSVs), which are needed to develop four-side buttable chips and cover large surfaces with minimum inactive area.

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

NASA Astrophysics Data System (ADS)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

2011-02-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( <0.5% X0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process.

PubMed

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-12

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke - . Readout noise under the highest pixel gain condition is 1 e - with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7", 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process †

PubMed Central

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-01

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke−. Readout noise under the highest pixel gain condition is 1 e− with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7”, 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach. PMID:29329210

IRAC test report. Gallium doped silicon band 2: Read noise and dark current

NASA Technical Reports Server (NTRS)

Lamb, Gerald; Shu, Peter; Mather, John; Ewin, Audrey; Bowser, Jeffrey

1987-01-01

A direct readout infrared detector array, a candidate for the Space Infrared Telescope Facility (SIRTF) Infrared Array Camera (IRAC), has been tested. The array has a detector surface of gallium doped silicon, bump bonded to a 58x62 pixel MOSFET multiplexer on a separate chip. Although this chip and system do not meet all the SIRTF requirements, the critically important read noise is within a factor of 3 of the requirement. Significant accomplishments of this study include: (1) development of a low noise correlated double sampling readout system with a readout noise of 127 to 164 electrons (based on the detector integrator capacitance of 0.1 pF); (2) measurement of the readout noise of the detector itself, ranging from 123 to 214 electrons with bias only (best to worst pixel), and 256 to 424 electrons with full clocking in normal operation at 5.4 K where dark current is small. Thirty percent smaller read noises are obtained at a temperature of 15K; (3) measurement of the detector response versus integration time, showing significant nonlinear behavior for large signals, well below the saturation level; and (4) development of a custom computer interface and suitable software for collection, analysis and display of data.

Prototype AEGIS: A Pixel-Array Readout Circuit for Gamma-Ray Imaging.

PubMed

Barber, H Bradford; Augustine, F L; Furenlid, L; Ingram, C M; Grim, G P

2005-07-31

Semiconductor detector arrays made of CdTe/CdZnTe are expected to be the main components of future high-performance, clinical nuclear medicine imaging systems. Such systems will require small pixel-pitch and much larger numbers of pixels than are available in current semiconductor-detector cameras. We describe the motivation for developing a new readout integrated circuit, AEGIS, for use in hybrid semiconductor detector arrays, that may help spur the development of future cameras. A basic design for AEGIS is presented together with results of an HSPICE ™ simulation of the performance of its unit cell. AEGIS will have a shaper-amplifier unit cell and neighbor pixel readout. Other features include the use of a single input power line with other biases generated on-board, a control register that allows digital control of all thresholds and chip configurations and an output approach that is compatible with list-mode data acquisition. An 8×8 prototype version of AEGIS is currently under development; the full AEGIS will be a 64×64 array with 300 μm pitch.

A review of advances in pixel detectors for experiments with high rate and radiation

NASA Astrophysics Data System (ADS)

Garcia-Sciveres, Maurice; Wermes, Norbert

2018-06-01

The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors.

PubMed

Ge, Xiaoliang; Theuwissen, Albert J P

2018-02-27

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors †

PubMed Central

Theuwissen, Albert J. P.

2018-01-01

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models. PMID:29495496

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

NASA Astrophysics Data System (ADS)

Macchiolo, A.; Nisius, R.; Savic, N.; Terzo, S.

2016-09-01

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 ×1015 neq /cm2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50×50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80°) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

A novel high electrode count spike recording array using an 81,920 pixel transimpedance amplifier-based imaging chip.

PubMed

Johnson, Lee J; Cohen, Ethan; Ilg, Doug; Klein, Richard; Skeath, Perry; Scribner, Dean A

2012-04-15

Microelectrode recording arrays of 60-100 electrodes are commonly used to record neuronal biopotentials, and these have aided our understanding of brain function, development and pathology. However, higher density microelectrode recording arrays of larger area are needed to study neuronal function over broader brain regions such as in cerebral cortex or hippocampal slices. Here, we present a novel design of a high electrode count picocurrent imaging array (PIA), based on an 81,920 pixel Indigo ISC9809 readout integrated circuit camera chip. While originally developed for interfacing to infrared photodetector arrays, we have adapted the chip for neuron recording by bonding it to microwire glass resulting in an array with an inter-electrode pixel spacing of 30 μm. In a high density electrode array, the ability to selectively record neural regions at high speed and with good signal to noise ratio are both functionally important. A critical feature of our PIA is that each pixel contains a dedicated low noise transimpedance amplifier (∼0.32 pA rms) which allows recording high signal to noise ratio biocurrents comparable to single electrode voltage amplifier recordings. Using selective sampling of 256 pixel subarray regions, we recorded the extracellular biocurrents of rabbit retinal ganglion cell spikes at sampling rates up to 7.2 kHz. Full array local electroretinogram currents could also be recorded at frame rates up to 100 Hz. A PIA with a full complement of 4 readout circuits would span 1cm and could acquire simultaneous data from selected regions of 1024 electrodes at sampling rates up to 9.3 kHz. Published by Elsevier B.V.

Investigation of image distortion due to MCP electronic readout misalignment and correction via customized GUI application

NASA Astrophysics Data System (ADS)

Vitucci, G.; Minniti, T.; Tremsin, A. S.; Kockelmann, W.; Gorini, G.

2018-04-01

The MCP-based neutron counting detector is a novel device that allows high spatial resolution and time-resolved neutron radiography and tomography with epithermal, thermal and cold neutrons. Time resolution is possible by the high readout speeds of ~ 1200 frames/sec, allowing high resolution event counting with relatively high rates without spatial resolution degradation due to event overlaps. The electronic readout is based on a Timepix sensor, a CMOS pixel readout chip developed at CERN. Currently, a geometry of a quad Timepix detector is used with an active format of 28 × 28 mm2 limited by the size of the Timepix quad (2 × 2 chips) readout. Measurements of a set of high-precision micrometers test samples have been performed at the Imaging and Materials Science & Engineering (IMAT) beamline operating at the ISIS spallation neutron source (U.K.). The aim of these experiments was the full characterization of the chip misalignment and of the gaps between each pad in the quad Timepix sensor. Such misalignment causes distortions of the recorded shape of the sample analyzed. We present in this work a post-processing image procedure that considers and corrects these effects. Results of the correction will be discussed and the efficacy of this method evaluated.

CMOS VLSI Active-Pixel Sensor for Tracking

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The diagonal-switch and memory addresses would be generated by the on-chip controller. The memory array would be large enough to hold differential signals acquired from all 8 windows during a frame period. Following the rapid sampling from all the windows, the contents of the memory array would be read out sequentially by use of a capacitive transimpedance amplifier (CTIA) at a maximum data rate of 10 MHz. This data rate is compatible with an update rate of almost 10 Hz, even in full-frame operation

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Wang, T.; Barbero, M.; Berdalovic, I.; Bespin, C.; Bhat, S.; Breugnon, P.; Caicedo, I.; Cardella, R.; Chen, Z.; Degerli, Y.; Egidos, N.; Godiot, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Krüger, H.; Kugathasan, T.; Hügging, F.; Marin Tobon, C. A.; Moustakas, K.; Pangaud, P.; Schwemling, P.; Pernegger, H.; Pohl, D.-L.; Rozanov, A.; Rymaszewski, P.; Snoeys, W.; Wermes, N.

2018-03-01

Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. DMAPS integrating fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-Monopix and TJ-Monopix, are presented. LF-Monopix was fabricated in the LFoundry 150 nm CMOS technology, and TJ-Monopix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The paper makes a joint description of the two prototypes, so that their technical differences and challenges can be addressed in direct comparison. First measurement results for LF-Monopix will also be shown, demonstrating for the first time a fully functional fast readout DMAPS prototype implemented in the LFoundry technology.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Room temperature 1040fps, 1 megapixel photon-counting image sensor with 1.1um pixel pitch

NASA Astrophysics Data System (ADS)

Masoodian, S.; Ma, J.; Starkey, D.; Wang, T. J.; Yamashita, Y.; Fossum, E. R.

2017-05-01

A 1Mjot single-bit quanta image sensor (QIS) implemented in a stacked backside-illuminated (BSI) process is presented. This is the first work to report a megapixel photon-counting CMOS-type image sensor to the best of our knowledge. A QIS with 1.1μm pitch tapered-pump-gate jots is implemented with cluster-parallel readout, where each cluster of jots is associated with its own dedicated readout electronics stacked under the cluster. Power dissipation is reduced with this cluster readout because of the reduced column bus parasitic capacitance, which is important for the development of 1Gjot arrays. The QIS functions at 1040fps with binary readout and dissipates only 17.6mW, including I/O pads. The readout signal chain uses a fully differential charge-transfer amplifier (CTA) gain stage before a 1b-ADC to achieve an energy/bit FOM of 16.1pJ/b and 6.9pJ/b for the whole sensor and gain stage+ADC, respectively. Analog outputs with on-chip gain are implemented for pixel characterization purposes.

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

A noiseless, kHz frame rate imaging detector for AO wavefront sensors based on MCPs read out with the Medipix2 CMOS pixel chip

NASA Astrophysics Data System (ADS)

Vallerga, J. V.; McPhate, J. B.; Tremsin, A. S.; Siegmund, O. H. W.; Mikulec, B.; Clark, A. G.

2004-12-01

Future wavefront sensors in adaptive optics (AO) systems for the next generation of large telescopes (> 30 m diameter) will require large formats (512x512) , kHz frame rates, low readout noise (<3 electrons) and high optical QE. The current generation of CCDs cannot achieve the first three of these specifications simultaneously. We present a detector scheme that can meet the first three requirements with an optical QE > 40%. This detector consists of a vacuum tube with a proximity focused GaAs photocathode whose photoelectrons are amplified by microchannel plates and the resulting output charge cloud counted by a pixelated CMOS application specific integrated circuit (ASIC) called the Medipix2 (http://medipix.web.cern.ch/MEDIPIX/). Each 55 micron square pixel of the Medipix2 chip has an amplifier, discriminator and 14 bit counter and the 256x256 array can be read out in 287 microseconds. The chip is 3 side abuttable so a 512x512 array is feasible in one vacuum tube. We will present the first results with an open-faced, demountable version of the detector where we have mounted a pair of MCPs 500 microns above a Medipix2 readout inside a vacuum chamber and illuminated it with UV light. The results include: flat field response, spatial resolution, spatial linearity on the sub-pixel level and global event counting rate. We will also discuss the vacuum tube design and the fabrication issues associated with the Medipix2 surviving the tube making process.

First light from a very large area pixel array for high-throughput x-ray polarimetry

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgrò, C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-06-01

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50μm pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a standard 0.18μm CMOS VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The very small pixel area and the use of a deep sub-micron CMOS technology has brought the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50μm on a triangular pattern) Gas Electron Multiplier are presented. The matching of readout and gas amplification pitch allows getting optimal results. The application of this detector for Astronomical X-Ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown. Results from a full MonteCarlo simulation for several galactic and extragalactic astronomical sources are also reported.

Advanced power analysis methodology targeted to the optimization of a digital pixel readout chip design and its critical serial powering system

NASA Astrophysics Data System (ADS)

Marconi, S.; Orfanelli, S.; Karagounis, M.; Hemperek, T.; Christiansen, J.; Placidi, P.

2017-02-01

A dedicated power analysis methodology, based on modern digital design tools and integrated with the VEPIX53 simulation framework developed within RD53 collaboration, is being used to guide vital choices for the design and optimization of the next generation ATLAS and CMS pixel chips and their critical serial powering circuit (shunt-LDO). Power consumption is studied at different stages of the design flow under different operating conditions. Significant effort is put into extensive investigations of dynamic power variations in relation with the decoupling seen by the powering network. Shunt-LDO simulations are also reported to prove the reliability at the system level.

PFM2: a 32 × 32 processor for X-ray diffraction imaging at FELs

NASA Astrophysics Data System (ADS)

Manghisoni, M.; Fabris, L.; Re, V.; Traversi, G.; Ratti, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Vacchi, C.; Pancheri, L.; Benkechcache, M. E. A.; Dalla Betta, G.-F.; Xu, H.; Verzellesi, G.; Ronchin, S.; Boscardin, M.; Batignani, G.; Bettarini, S.; Casarosa, G.; Forti, F.; Giorgi, M.; Paladino, A.; Paoloni, E.; Rizzo, G.; Morsani, F.

2016-11-01

This work is concerned with the design of a readout chip for application to experiments at the next generation X-ray Free Electron Lasers (FEL). The ASIC, named PixFEL Matrix (PFM2), has been designed in a 65 nm CMOS technology and consists of 32 × 32 pixels. Each cell covers an area of 110 × 110 μm2 and includes a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaper used to process the preamplifier output signal, a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) and digital circuitry for channel control and data readout. Two different solutions for the readout channel, based on different versions of the time-variant filter, have been integrated in the chip. Both solutions can be operated in such a way to cope with the high frame rate (exceeding 1 MHz) foreseen for future X-ray FEL machines. The ASIC will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager. This work has been carried out in the frame of the PixFEL project funded by Istituto Nazionale di Fisica Nucleare (INFN), Italy.

Medipix2 as a tool for proton beam characterization

NASA Astrophysics Data System (ADS)

Bisogni, M. G.; Cirrone, G. A. P.; Cuttone, G.; Del Guerra, A.; Lojacono, P.; Piliero, M. A.; Romano, F.; Rosso, V.; Sipala, V.; Stefanini, A.

2009-08-01

Proton therapy is a technique used to deliver a highly accurate and effective dose for the treatment of a variety of tumor diseases. The possibility to have an instrument able to give online information could reduce the time necessary to characterize the proton beam. To this aim we propose a detection system for online proton beam characterization based on the Medipix2 chip. Medipix2 is a detection system based on a single event counter read-out chip, bump-bonded to silicon pixel detector. The read-out chip is a matrix of 256×256 cells, 55×55 μm 2 each. To demonstrate the capabilities of Medipix2 as a proton detector, we have used a 62 MeV flux proton beam at the CATANA beam line of the LNS-INFN laboratory. The measurements performed confirmed the good imaging performances of the Medipix2 system also for the characterization of proton beams.

Beam test results of the BTeV silicon pixel detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gabriele Chiodini et al.

2000-09-28

The authors have described the results of the BTeV silicon pixel detector beam test. The pixel detectors under test used samples of the first two generations of Fermilab pixel readout chips, FPIX0 and FPIX1, (indium bump-bonded to ATLAS sensor prototypes). The spatial resolution achieved using analog charge information is excellent for a large range of track inclination. The resolution is still very good using only 2-bit charge information. A relatively small dependence of the resolution on bias voltage is observed. The resolution is observed to depend dramatically on the discriminator threshold, and it deteriorates rapidly for threshold above 4000e{sup {minus}}.

iPadPix—A novel educational tool to visualise radioactivity measured by a hybrid pixel detector

NASA Astrophysics Data System (ADS)

Keller, O.; Schmeling, S.; Müller, A.; Benoit, M.

2016-11-01

With the ability to attribute signatures of ionising radiation to certain particle types, pixel detectors offer a unique advantage over the traditional use of Geiger-Müller tubes also in educational settings. We demonstrate in this work how a Timepix readout chip combined with a standard 300μm pixelated silicon sensor can be used to visualise radioactivity in real-time and by means of augmented reality. The chip family is the result of technology transfer from High Energy Physics at CERN and facilitated by the Medipix Collaboration. This article summarises the development of a prototype based on an iPad mini and open source software detailed in ref. [1]. Appropriate experimental activities that explore natural radioactivity and everyday objects are given to demonstrate the use of this new tool in educational settings.

3-D readout-electronics packaging for high-bandwidth massively paralleled imager

DOEpatents

Kwiatkowski, Kris; Lyke, James

2007-12-18

Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a "mirror cube"). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45.degree. angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.

High performance digital read out integrated circuit (DROIC) for infrared imaging

NASA Astrophysics Data System (ADS)

Mizuno, Genki; Olah, Robert; Oduor, Patrick; Dutta, Achyut K.; Dhar, Nibir K.

2016-05-01

Banpil Photonics has developed a high-performance Digital Read-Out Integrated Circuit (DROIC) for image sensors and camera systems targeting various military, industrial and commercial Infrared (IR) imaging applications. The on-chip digitization of the pixel output eliminates the necessity for an external analog-to-digital converter (ADC), which not only cuts costs, but also enables miniaturization of packaging to achieve SWaP-C camera systems. In addition, the DROIC offers new opportunities for greater on-chip processing intelligence that are not possible in conventional analog ROICs prevalent today. Conventional ROICs, which typically can enhance only one high performance attribute such as frame rate, power consumption or noise level, fail when simultaneously targeting the most aggressive performance requirements demanded in imaging applications today. Additionally, scaling analog readout circuits to meet such requirements leads to expensive, high-power consumption with large and complex systems that are untenable in the trend towards SWaP-C. We present the implementation of a VGA format (640x512 pixels 15μm pitch) capacitivetransimpedance amplifier (CTIA) DROIC architecture that incorporates a 12-bit ADC at the pixel level. The CTIA pixel input circuitry has two gain modes with programmable full-well capacity values of 100K e- and 500K e-. The DROIC has been developed with a system-on-chip architecture in mind, where all the timing and biasing are generated internally without requiring any critical external inputs. The chip is configurable with many parameters programmable through a serial programmable interface (SPI). It features a global shutter, low power, and high frame rates programmable from 30 up 500 frames per second in full VGA format supported through 24 LVDS outputs. This DROIC, suitable for hybridization with focal plane arrays (FPA) is ideal for high-performance uncooled camera applications ranging from near IR (NIR) and shortwave IR (SWIR) to mid-wave IR (MWIR) and long-wave IR (LWIR) spectral bands.

Characterisation of Vanilla—A novel active pixel sensor for radiation detection

NASA Astrophysics Data System (ADS)

Blue, A.; Bates, R.; Laing, A.; Maneuski, D.; O'Shea, V.; Clark, A.; Prydderch, M.; Turchetta, R.; Arvanitis, C.; Bohndiek, S.

2007-10-01

Novel features of a new monolithic active pixel sensor, Vanilla, with 520×520 pixels ( 25 μm square) has been characterised for the first time. Optimisation of the sensor operation was made through variation of frame rates, integration times and on-chip biases and voltages. Features such as flushed reset operation, ROI capturing and readout modes have been fully tested. Stability measurements were performed to test its suitablility for long-term applications. These results suggest the Vanilla sensor—along with bio-medical and space applications—is suitable for use in particle physics experiments.

Single-photon imaging in complementary metal oxide semiconductor processes

PubMed Central

Charbon, E.

2014-01-01

This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britton, C.L.; Jagadish, U.; Bryan, W.L.

An Integrated Circuit (IC) readout chip with four channels arranged so as to receive input charge from the corners of the chip was designed for use with 5- to 7-mm pixel detectors. This Application Specific IC (ASIC) can be used for cold neutron imaging, for study of structural order in materials using cold neutron scattering or for particle physics experiments. The ASIC is fabricated in a 0.5-{micro}m n-well AMI process. The design of the ASIC and the test measurements made is reported. Noise measurements are also reported.

A Compact Polarization Imager

NASA Technical Reports Server (NTRS)

Thompson, Karl E.; Rust, David M.; Chen, Hua

1995-01-01

A new type of image detector has been designed to analyze the polarization of light simultaneously at all picture elements (pixels) in a scene. The Integrated Dual Imaging Detector (IDID) consists of a polarizing beamsplitter bonded to a custom-designed charge-coupled device with signal-analysis circuitry, all integrated on a silicon chip. The IDID should simplify the design and operation of imaging polarimeters and spectroscopic imagers used, for example, in atmospheric and solar research. Other applications include environmental monitoring and robot vision. Innovations in the IDID include two interleaved 512 x 1024 pixel imaging arrays (one for each polarization plane), large dynamic range (well depth of 10(exp 6) electrons per pixel), simultaneous readout and display of both images at 10(exp 6) pixels per second, and on-chip analog signal processing to produce polarization maps in real time. When used with a lithium niobate Fabry-Perot etalon or other color filter that can encode spectral information as polarization, the IDID can reveal tiny differences between simultaneous images at two wavelengths.

GOSSIP: A vertex detector combining a thin gas layer as signal generator with a CMOS readout pixel array

NASA Astrophysics Data System (ADS)

Campbell, M.; Heijne, E. H. M.; Llopart, X.; Colas, P.; Giganon, A.; Giomataris, Y.; Chefdeville, M.; Colijn, A. P.; Fornaini, A.; van der Graaf, H.; Kluit, P.; Timmermans, J.; Visschers, J. L.; Schmitz, J.

2006-05-01

A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed 50 μm above the chip, and electron multiplication occurred in the gap. With a He/isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90%. With this new readout technology for gas-filled detectors we recorded many image frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as δ-rays. With a gas layer thickness of only 1 mm, the device could be applied as vertex detector, outperforming all Si-based detectors.

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

NASA Technical Reports Server (NTRS)

Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

2003-01-01

Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

Dedicated multichannel readout ASIC coupled with single crystal diamond for dosimeter application

NASA Astrophysics Data System (ADS)

Fabbri, A.; Falco, M. D.; De Notaristefani, F.; Galasso, M.; Marinelli, M.; Orsolini Cencelli, V.; Tortora, L.; Verona, C.; Verona Rinati, G.

2013-02-01

This paper reports on the tests of a low-noise, multi-channel readout integrated circuit used as a readout electronic front-end for a diamond multi-pixel dosimeter. The system is developed for dose distribution measurement in radiotherapy applications. The first 10-channel prototype chip was designed and fabricated in a 0.18 um CMOS process. Every channel includes a charge integrator with a 10 pF capacitor and a double slope A/D converter. The diamond multi-pixel detector, based on CVD synthetic single crystal diamond Schottky diodes, is made by a 3 × 3 sensor matrix. The overall device has been tested under irradiation with 6 MeV radio therapeutic photon beams at the Policlinico ``Tor Vergata'' (PTV) hospital. Measurements show a 20 fA RMS leakage current from the front-end input stage and a negligible dark current from the diamond detector, a stable temporal response and a good linear behaviour as a function of both dose and dose rate. These characteristics were common to each tested channel.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chumacero, E. Miguel; De Celis Alonso, B.; Martínez Hernández, M. I.

The development in semiconductor CMOS technology has enabled the creation of sensitive detectors for a wide range of ionizing radiation. These devices are suitable for photon counting and can be used in imaging and tomography X-ray diagnostics. The Medipix[1] radiation detection system is a hybrid silicon pixel chip developed for particle tracking applications in High Energy Physics. Its exceptional features (high spatial and energy resolution, embedded ultra fast readout, different operation modes, etc.) make the Medipix an attractive device for applications in medical imaging. In this work the energy characterization of a third-generation Medipix chip (Medipix3) coupled to a siliconmore » sensor is presented. We used different radiation sources (strontium 90, iron 55 and americium 241) to obtain the response curve of the hybrid detector as a function of energy. We also studied the contrast of the Medipix as a measure of pixel noise. Finally we studied the response to fluorescence X rays from different target materials (In, Pd and Cd) for the two data acquisition modes of the chip; single pixel mode and charge summing mode.« less

Experiences in flip chip production of radiation detectors

NASA Astrophysics Data System (ADS)

Savolainen-Pulli, Satu; Salonen, Jaakko; Salmi, Jorma; Vähänen, Sami

2006-09-01

Modern imaging devices often require heterogeneous integration of different materials and technologies. Because of yield considerations, material availability, and various technological limitations, an extremely fine pitch is necessary to realize high-resolution images. Thus, there is a need for a hybridization technology that is able to join together readout amplifiers and pixel detectors at a very fine pitch. This paper describes radiation detector flip chip production at VTT. Our flip chip technology utilizes 25-μm diameter tin-lead solder bumps at a 50-μm pitch and is based on flux-free bonding. When preprocessed wafers are used, as is the case here, the total yield is defined only partly by the flip chip process. Wafer preprocessing done by a third-party silicon foundry and the flip chip process create different process defects. Wafer-level yield maps (based on probing) provided by the customer are used to select good readout chips for assembly. Wafer probing is often done outside of a real clean room environment, resulting in particle contamination and/or scratches on the wafers. Factors affecting the total yield of flip chip bonded detectors are discussed, and some yield numbers of the process are given. Ways to improve yield are considered, and finally guidelines for process planning and device design with respect to yield optimization are given.

MT3250BA: a 320×256-50µm snapshot microbolometer ROIC for high-resistance detector arrays

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Akin, Tayfun

2013-06-01

This paper reports the development of a new microbolometer readout integrated circuit (MT3250BA) designed for high-resistance detector arrays. MT3250BA is the first microbolometer readout integrated circuit (ROIC) product from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic CMOS imaging sensors and ROICs for hybrid photonic imaging sensors and microbolometers. MT3250BA has a format of 320 × 256 and a pixel pitch of 50 µm, developed with a system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT3250BA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. MT3250BA has 2 analog video outputs and 1 analog reference output for pseudo-differential operation, and the ROIC can be programmed to operate in the 1 or 2-output modes. A unique feature of MT3250BA is that it performs snapshot readout operation; therefore, the image quality will only be limited by the thermal time constant of the detector pixels, but not by the scanning speed of the ROIC, as commonly found in the conventional microbolometer ROICs performing line-by-line (rolling-line) readout operation. The signal integration is performed at the pixel level in parallel for the whole array, and signal integration time can be programmed from 0.1 µs up to 100 ms in steps of 0.1 µs. The ROIC is designed to work with high-resistance detector arrays with pixel resistance values higher than 250 kΩ. The detector bias voltage can be programmed on-chip over a 2 V range with a resolution of 1 mV. The ROIC has a measured input referred noise of 260 µV rms at 300 K. The ROIC can be used to build a microbolometer infrared sensor with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a high detector resistance value (≥ 250 KΩ), a high TCR value (≥ 2.5 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). The ROIC uses a single 3.3 V supply voltage and dissipates less than 75 mW in the 1-output mode at 60 fps. MT3250BA is fabricated using a mixed-signal CMOS process on 200 mm CMOS wafers, and tested wafers are available with test data and wafer map. A USB based compact test electronics and software are available for quick evaluation of this new microbolometer ROIC.

Design of 90×8 ROIC with pixel level digital TDI implementation for scanning type LWIR FPAs

NASA Astrophysics Data System (ADS)

Ceylan, Omer; Kayahan, Huseyin; Yazici, Melik; Gurbuz, Yasar

2013-06-01

Design of a 90×8 CMOS readout integrated circuit (ROIC) based on pixel level digital time delay integration (TDI) for scanning type LWIR focal plane arrays (FPAs) is presented. TDI is implemented on 8 pixels which improves the SNR of the system with a factor of √8. Oversampling rate of 3 improves the spatial resolution of the system. TDI operation is realized with a novel under-pixel analog-to-digital converter, which improves the noise performance of ROIC with a lower quantization noise. Since analog signal is converted to digital domain in-pixel, non-uniformities and inaccuracies due to analog signal routing over large chip area is eliminated. Contributions of each pixel for proper TDI operation are added in summation counters, no op-amps are used for summation, hence power consumption of ROIC is lower than its analog counterparts. Due to lack of multiple capacitors or summation amplifiers, ROIC occupies smaller chip area compared to its analog counterparts. ROIC is also superior to its digital counterparts due to novel digital TDI implementation in terms of power consumption, noise and chip area. ROIC supports bi-directional scan, multiple gain settings, bypass operation, automatic gain adjustment, pixel select/deselect, and is programmable through serial or parallel interface. Input referred noise of ROIC is less than 750 rms electrons, while power consumption is less than 20mW. ROIC is designed to perform both in room and cryogenic temperatures.

Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments

NASA Astrophysics Data System (ADS)

Goiffon, Vincent; Rolando, Sébastien; Corbière, Franck; Rizzolo, Serena; Chabane, Aziouz; Girard, Sylvain; Baer, Jérémy; Estribeau, Magali; Magnan, Pierre; Paillet, Philippe; Van Uffelen, Marco; Mont Casellas, Laura; Scott, Robin; Gaillardin, Marc; Marcandella, Claude; Marcelot, Olivier; Allanche, Timothé

2017-01-01

The Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC) building blocks is explored in the Multi-MGy range using 60Co gamma-ray irradiations. The performances of the following CoC subcomponents are studied: radiation hardened (RH) pixel and photodiode designs, RH readout chain, Color Filter Arrays (CFA) and column RH Analog-to-Digital Converters (ADC). Several radiation hardness improvements are reported (on the readout chain and on dark current). CFAs and ADCs degradations appear to be very weak at the maximum TID of 6 MGy(SiO2), 600 Mrad. In the end, this study demonstrates the feasibility of a MGy rad-hard CMOS color digital camera-on-a-chip, illustrated by a color image captured after 6 MGy(SiO2) with no obvious degradation. An original dark current reduction mechanism in irradiated CMOS Image Sensors is also reported and discussed.

MT3825BA: a 384×288-25µm ROIC for uncooled microbolometer FPAs

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Gulden, M. Ali; Bayhan, Nusret; Incedere, O. Samet; Soyer, S. Tuncer; Ustundag, Cem M. B.; Isikhan, Murat; Kocak, Serhat; Turan, Ozge; Yalcin, Cem; Akin, Tayfun

2014-06-01

This paper reports the development of a new microbolometer Readout Integrated Circuit (ROIC) called MT3825BA. It has a format of 384 × 288 and a pixel pitch of 25μm. MT3825BA is Mikro-Tasarim's second microbolometer ROIC product, which is developed specifically for resistive surface micro-machined microbolometer detector arrays using high-TCR pixel materials, such as VOx and a-Si. MT3825BA has a system-on-chip architecture, where all the timing, biasing, and pixel non-uniformity correction (NUC) operations in the ROIC are applied using on-chip circuitry simplifying the use and system integration of this ROIC. The ROIC is designed to support pixel resistance values ranging from 30 KΩ to 100 KΩ. MT3825BA is operated using conventional row based readout method, where pixels in the array are read out in a row-by-row basis, where the applied bias for each pixel in a given row is updated at the beginning of each line period according to the applied line based NUC data. The NUC data is applied continuously in a row-by-row basis using the serial programming interface, which is also used to program user configurable features of the ROIC, such as readout gain, integration time, and number of analog video outputs. MT3825BA has a total of 4 analog video outputs and 2 analog reference outputs, placed at the top and bottom of the ROIC, which can be programmed to operate in the 1, 2, and 4-output modes, supporting frames rates well above 60 fps at a 3 MHz pixel output rate. The pixels in the array are read out with respect to reference pixels implemented above and below actual array pixels. The bias voltage of the pixels can be programmed over a 1.0 V range to compensate for the changes in the detector resistance values due to the variations coming from the manufacturing process or changes in the operating temperature. The ROIC has an on-chip integrated temperature sensor with a sensitivity of better than 5 mV / K, and the output of the temperature sensor can be read out the output as part of the analog video stream. MT3825BA can be used to build a microbolometer FPAs with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a detector resistance value up to 100 KΩ, a high TCR value (< 2 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). MT3825BA measures 13.0 mm × 13.5 mm and is fabricated on 200 mm CMOS wafers. The microbolometer ROIC wafers are engineered to have flat surface finish to simplify the wafer level detector fabrication and wafer level vacuum packaging (WLVP). The ROIC runs on 3.3 V analog and 1.8 V digital supplies, and dissipates less than 85 mW in the 2-output mode at 30 fps. Mikro-Tasarim provides tested ROIC wafers and offers compact test electronics and software for its ROIC customers to shorten their FPA and camera development cycles.

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragone, A; /SLAC; Pratte, J.F.

An ASIC for the readout of signals from X-ray Active Matrix Pixel Sensor (XAMPS) detectors to be used at the Linac Coherent Light Source (LCLS) is presented. The X-ray Pump Probe (XPP) instrument, for which the ASIC has been designed, requires a large input dynamic range on the order of 104 photons at 8 keV with a resolution of half a photon FWHM. Due to the size of the pixel and the length of the readout line, large input capacitance is expected, leading to stringent requirement on the noise optimization. Furthermore, the large number of pixels needed for a goodmore » position resolution and the fixed LCLS beam period impose limitations on the time available for the single pixel readout. Considering the periodic nature of the LCLS beam, the ASIC developed for this application is a time-variant system providing low-noise charge integration, filtering and correlated double sampling. In order to cope with the large input dynamic range a charge pump scheme implementing a zero-balance measurement method has been introduced. It provides an on chip 3-bit coarse digital conversion of the integrated charge. The residual charge is sampled using correlated double sampling into analog memory and measured with the required resolution. The first 64 channel prototype of the ASIC has been fabricated in TSMC CMOS 0.25 {micro}m technology. In this paper, the ASIC architecture and performances are presented.« less

Large Format, Background Limited Arrays of Kinetic Inductance Detectors for Sub-mm Astronomy

NASA Astrophysics Data System (ADS)

Baselmans, Jochem

2018-01-01

We present the development of large format imaging arrays for sub-mm astronomy based upon microwave Kinetic Inductance detectors and their read-out. In particular we focus on the arrays developed for the A-MKID instrument for the APEX telescope. AMKID contains 2 focal plane arrays, covering a field of view of 15?x15?. One array is optimized for the 350 GHz telluric window, the other for the 850 GHz window. Both arrays are constructed from four 61 x 61 mm detector chips, each of which contains up to 3400 detectors and up to 880 detectors per readout line. The detectors are lens antenna coupled MKIDs made from NbTiN and Aluminium that reach photon noise limited sensitivity in combination with a high optical coupling. The lens-antenna radiation coupling enables the use of 4K optics and Lyot stop due to the intrinsic directivity of the detector beam, allowing a simple cryogenic architecture. We discuss the pixel design and verification, detector packaging and the array performance. We will also discuss the readout system, which is a combination of a digital and analog back-end that can read-out up to 4000 pixels simultaneously using frequency division multiplexing.

A 1024×768-12μm Digital ROIC for uncooled microbolometer FPAs

NASA Astrophysics Data System (ADS)

Eminoglu, Selim

2017-02-01

This paper reports the development of a new digital microbolometer Readout Integrated Circuit (D-ROIC), called MT10212BD. It has a format of 1024 × 768 (XGA) and a pixel pitch of 12μm. MT10212BD is Mikro Tasarim's second 12μm pitch microbolometer ROIC, which is developed specifically for surface micro machined microbolometer detector arrays with small pixel pitch using high-TCR pixel materials, such as VOx and a Si. MT10212BD has an alldigital system on-chip architecture, which generates programmable timing and biasing, and performs 14-bit analog to digital conversion (ADC). The signal processing chain in the ROIC is composed of pixel bias circuitry, integrator based programmable gain amplifier followed by column parallel ADC circuitry. MT10212BD has a serial programming interface that can be used to configure the programmable ROIC features and to load the Non-Uniformity-Correction (NUC) date to the ROIC. MT10212BD has a total of 8 high-speed serial digital video outputs, which can be programmed to operate in the 2, 4, and 8-output modes and can support frames rates above 60 fps. The high-speed serial digital outputs supports data rates as high as 400 Mega-bits/s, when operated at 50 MHz system clock frequency. There is an on-chip phase-locked-loop (PLL) based timing circuitry to generate the high speed clocks used in the ROIC. The ROIC is designed to support pixel resistance values ranging from 30KΩ to 90kΩ, with a nominal value of 60KΩ. The ROIC has a globally programmable gain in the column readout, which can be adjusted based on the detector resistance value.

High-speed high-resolution epifluorescence imaging system using CCD sensor and digital storage for neurobiological research

NASA Astrophysics Data System (ADS)

Takashima, Ichiro; Kajiwara, Riichi; Murano, Kiyo; Iijima, Toshio; Morinaka, Yasuhiro; Komobuchi, Hiroyoshi

2001-04-01

We have designed and built a high-speed CCD imaging system for monitoring neural activity in an exposed animal cortex stained with a voltage-sensitive dye. Two types of custom-made CCD sensors were developed for this system. The type I chip has a resolution of 2664 (H) X 1200 (V) pixels and a wide imaging area of 28.1 X 13.8 mm, while the type II chip has 1776 X 1626 pixels and an active imaging area of 20.4 X 18.7 mm. The CCD arrays were constructed with multiple output amplifiers in order to accelerate the readout rate. The two chips were divided into either 24 (I) or 16 (II) distinct areas that were driven in parallel. The parallel CCD outputs were digitized by 12-bit A/D converters and then stored in the frame memory. The frame memory was constructed with synchronous DRAM modules, which provided a capacity of 128 MB per channel. On-chip and on-memory binning methods were incorporated into the system, e.g., this enabled us to capture 444 X 200 pixel-images for periods of 36 seconds at a rate of 500 frames/second. This system was successfully used to visualize neural activity in the cortices of rats, guinea pigs, and monkeys.

YARR - A PCIe based Readout Concept for Current and Future ATLAS Pixel Modules

NASA Astrophysics Data System (ADS)

Heim, Timon

2017-10-01

The Yet Another Rapid Readout (YARR) system is a DAQ system designed for the readout of current generation ATLAS Pixel FE-I4 and next generation chips. It utilises a commercial-off-the-shelf PCIe FPGA card as a reconfigurable I/O interface, which acts as a simple gateway to pipe all data from the Pixel modules via the high speed PCIe connection into the host system’s memory. Relying on modern CPU architectures, which enables the usage of parallelised processing in threads and commercial high speed interfaces in everyday computers, it is possible to perform all processing on a software level in the host CPU. Although FPGAs are very powerful at parallel signal processing their firmware is hard to maintain and constrained by their connected hardware. Software, on the other hand, is very portable and upgraded frequently with new features coming at no cost. A DAQ concept which does not rely on the underlying hardware for acceleration also eases the transition from prototyping in the laboratory to the full scale implementation in the experiment. The overall concept and data flow will be outlined, as well as the challenges and possible bottlenecks which can be encountered when moving the processing from hardware to software.

On-chip skin color detection using a triple-well CMOS process

NASA Astrophysics Data System (ADS)

Boussaid, Farid; Chai, Douglas; Bouzerdoum, Abdesselam

2004-03-01

In this paper, a current-mode VLSI architecture enabling on read-out skin detection without the need for any on-chip memory elements is proposed. An important feature of the proposed architecture is that it removes the need for demosaicing. Color separation is achieved using the strong wavelength dependence of the absorption coefficient in silicon. This wavelength dependence causes a very shallow absorption of blue light and enables red light to penetrate deeply in silicon. A triple-well process, allowing a P-well to be placed inside an N-well, is chosen to fabricate three vertically integrated photodiodes acting as the RGB color detector for each pixel. Pixels of an input RGB image are classified as skin or non-skin pixels using a statistical skin color model, chosen to offer an acceptable trade-off between skin detection performance and implementation complexity. A single processing unit is used to classify all pixels of the input RGB image. This results in reduced mismatch and also in an increased pixel fill-factor. Furthermore, the proposed current-mode architecture is programmable, allowing external control of all classifier parameters to compensate for mismatch and changing lighting conditions.

Life test of the InGaAs focal plane arrays detector for space applications

NASA Astrophysics Data System (ADS)

Zhu, Xian-Liang; Zhang, Hai-Yan; Li, Xue; Huang, Zhang-Cheng; Gong, Hai-Mei

2017-08-01

The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C 80°C 90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).

Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

2016-07-01

The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

Dose-dependent X-ray measurements using a 64×64 hybrid GaAs pixel detector with photon counting

NASA Astrophysics Data System (ADS)

Schwarz, C.; Campbell, M.; Goeppert, R.; Ludwig, J.; Mikulec, B.; Rogalla, M.; Runge, K.; Soeldner-Rembold, A.; Smith, K. M.; Snoeys, W.; Watt, J.

2001-03-01

New developments in medical imaging head towards semiconductor detectors flip-chip bonded to CMOS readout chips. In this work, detectors fabricated on SI-GaAs bulk material were bonded to Photon Counting Chips. This PCC consists of a matrix of 64×64 identical square pixels (170 μm×170 μm) with a 15-bit counter in each cell. We investigated the imaging properties of these detector systems under exposure of a dental X-ray tube. First, a dose calibration of the X-ray tube was performed. Fixed pattern noise in flood exposure images was determined for a fixed dose and an image correction method, which uses a gain map, was applied. For characterising the imaging properties, the signal-to-noise ratio (SNR) was calculated as function of exposure dose. Finally, the dynamic range of the system was estimated. Developed in the framework of the MEDIPIX collaboration: CERN, Universities of Freiburg, Glasgow, Naples and Pisa.

MAPS development for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.

2015-03-01

Monolithic Active Pixel Sensors (MAPS) offer the possibility to build pixel detectors and tracking layers with high spatial resolution and low material budget in commercial CMOS processes. Significant progress has been made in the field of MAPS in recent years, and they are now considered for the upgrades of the LHC experiments. This contribution will focus on MAPS detectors developed for the ALICE Inner Tracking System (ITS) upgrade and manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Several sensor chip prototypes have been developed and produced to optimise both charge collection and readout circuitry. The chips have been characterised using electrical measurements, radioactive sources and particle beams. The tests indicate that the sensors satisfy the ALICE requirements and first prototypes with the final size of 1.5 × 3 cm2 have been produced in the first half of 2014. This contribution summarises the characterisation measurements and presents first results from the full-scale chips.

Design of a Multi-Channel Front-End Readout ASIC With Low Noise and Large Dynamic Input Range for APD-Based PET Imaging

NASA Astrophysics Data System (ADS)

Fang, X. C.; Hu-Guo, Ch.; Ollivier-Henry, N.; Brasse, D.; Hu, Y.

2010-06-01

This paper represents the design of a low-noise, wide band multi-channel readout integrated circuit (IC) used as front end readout electronics of avalanche photo diodes (APD) dedicated to a small animal positron emission tomography (PET) system. The first ten-channel prototype chip (APD-Chip) of the analog parts has been designed and fabricated in a 0.35 μm CMOS process. Every channel of the APD_Chip includes a charge-sensitive preamplifier (CSA), a CR-(RC)2 shaper, and an analog buffer. In a channel, the CSA reads charge signals (10 bits dynamic range) from an APD array having 10 pF of capacitance per pixel. A linearized degenerated differential pair which ensures high linearity in all dynamical range is used as the high feedback resistor for preventing pile up of signals. The designed CSA has the capability of compensating automatically up to 200 nA leakage current from the detector. The CR-(RC)2 shaper filters and shapes the output signal of the CSA. An equivalent input noise charge obtained from test is 275 e -+ 10 e-/pF. In this paper the prototype is presented for both its theoretical analysis and its test results.

Overview of the Micro Vertex Detector for the P bar ANDA experiment

NASA Astrophysics Data System (ADS)

Calvo, Daniela; P¯ANDA MVD Group

2017-02-01

The P bar ANDA experiment is devoted to study interactions between cooled antiproton beams and a fixed target (the interaction rate is of about 107 events/s), hydrogen or heavier nuclei. The innermost tracker of P bar ANDA is the Micro Vertex Detector (MVD), specially designed to ensure the secondary vertex resolution for the discrimination of short-lived charmonium states. Hybrid epitaxial silicon pixels and double-sided silicon microstrips will equip four barrels, arranged around the interaction point, and six forward disks. The experiment features a triggerless architecture with a master clock of 160 MHz, therefore the MVD has to run with a continuous data transmission where the hits need precise timestamps. The energy loss of the particles in the sensor will be measured as well. The challenging request of a triggerless readout suggested to develop custom readout chips for both pixel (ToPix) and microstrip (PASTA) devices. To validate components and the triggerless readout architecture, prototypes have been built and tested. After an overview of the MVD, the technological aspects and performances of some prototypes will be reported.

First qualification and selection of the eROSITA PNCCDs

NASA Astrophysics Data System (ADS)

Schächner, G.; Andritschke, R.; Hälker, O.; Herrmann, S.; Kimmel, N.; Meidinger, N.; Strüder, L.

2010-12-01

For the X-ray astronomy instrument eROSITA a framestore PNCCD was developed by the MPI Halbleiterlabor. The PNCCD has an image area of 384×384 pixels with a size of 75 μm×75 μm. Each channel of the PNCCD has an own readout anode which allows parallel amplification and signal processing of the CCD signals of one row. The first measurements for the spectroscopic characterization of the PNCCDs are made with a special measurement setup—the so-called Cold Chuck Probe Station. The Cold Chuck Probe Station allows to fully operate the CCD without mounting and bonding the chip on a PCB as the CCD is contacted only with needles. Thus all eROSITA PNCCDs can be qualified under the same measurement conditions and with an identical electronic setup. Therefore the results can be compared directly. The spectroscopic properties of the PNCCDs, like the charge transfer efficiency and the energy resolution are measured. Also pixel defects such as bright pixels or non-transferring pixels are detected. With the Cold Chuck Probe Station a readout noise of 2.7 e - ENC can be achieved and reliable measurement results obtained. Based on these results the best PNCCDs will be selected for eROSITA.

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Staller, C.; Zhou, Z;

ALPIDE: the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Šuljić, M.

2016-11-01

The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (2019-2020) of the CERN Large Hadron Collider (LHC) . The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of ~10 m2, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The ALPIDE chip, based on TowerJazz 180 nm CMOS Imaging Process, is being developed for this purpose. A particular process feature, the deep p-well, is exploited so the full CMOS logic can be implemented over the active sensor area without impinging on the deposited charge collection. ALPIDE is implemented on silicon wafers with a high resistivity epitaxial layer. A single chip measures 15 mm by 30 mm and contains half a million pixels distributed in 512 rows and 1024 columns. In-pixel circuitry features amplification, shaping, discrimination and multi-event buffering. The readout is hit driven i.e. only addresses of hit pixels are sent to the periphery. The upgrade of the ITS presents two different sets of requirements for sensors of the inner and of the outer layers due to the significantly different track density, radiation level and active detector surface. The ALPIDE chip fulfils the stringent requirements in both cases. The detection efficiency is higher than 99%, fake-hit probability is orders of magnitude lower than the required 10-6 and spatial resolution within the required 5 μm. This performance is to be maintained even after a total ionising does (TID) of 2.7 Mrad and a non-ionising energy loss (NIEL) fluence of 1.7 × 1013 1 MeV neq/cm2, which is above what is expected during the detector lifetime. Readout rate of 100 kHz is provided and the power density of ALPIDE is less than 40 mW/cm2. This contribution will provide a summary of the ALPIDE features and main test results.

A fast one-chip event-preprocessor and sequencer for the Simbol-X Low Energy Detector

NASA Astrophysics Data System (ADS)

Schanz, T.; Tenzer, C.; Maier, D.; Kendziorra, E.; Santangelo, A.

2010-12-01

We present an FPGA-based digital camera electronics consisting of an Event-Preprocessor (EPP) for on-board data preprocessing and a related Sequencer (SEQ) to generate the necessary signals to control the readout of the detector. The device has been originally designed for the Simbol-X low energy detector (LED). The EPP operates on 64×64 pixel images and has a real-time processing capability of more than 8000 frames per second. The already working releases of the EPP and the SEQ are now combined into one Digital-Camera-Controller-Chip (D3C).

Development and characterization of high-resolution neutron pixel detectors based on Timepix read-out chips

NASA Astrophysics Data System (ADS)

Krejci, F.; Zemlicka, J.; Jakubek, J.; Dudak, J.; Vavrik, D.; Köster, U.; Atkins, D.; Kaestner, A.; Soltes, J.; Viererbl, L.; Vacik, J.; Tomandl, I.

2016-12-01

Using a suitable isotope such as 6Li and 10B semiconductor hybrid pixel detectors can be successfully adapted for position sensitive detection of thermal and cold neutrons via conversion into energetic light ions. The adapted devices then typically provides spatial resolution at the level comparable to the pixel pitch (55 μm) and sensitive area of about few cm2. In this contribution, we describe further progress in neutron imaging performance based on the development of a large-area hybrid pixel detector providing practically continuous neutron sensitive area of 71 × 57 mm2. The measurements characterising the detector performance at the cold neutron imaging instrument ICON at PSI and high-flux imaging beam-line Neutrograph at ILL are presented. At both facilities, high-resolution high-contrast neutron radiography with the newly developed detector has been successfully applied for objects which imaging were previously difficult with hybrid pixel technology (such as various composite materials, objects of cultural heritage etc.). Further, a significant improvement in the spatial resolution of neutron radiography with hybrid semiconductor pixel detector based on the fast read-out Timepix-based detector is presented. The system is equipped with a thin planar 6LiF convertor operated effectively in the event-by-event mode enabling position sensitive detection with spatial resolution better than 10 μm.

Optimization of CMOS image sensor utilizing variable temporal multisampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability

NASA Astrophysics Data System (ADS)

Kabir, Salman; Smith, Craig; Armstrong, Frank; Barnard, Gerrit; Schneider, Alex; Guidash, Michael; Vogelsang, Thomas; Endsley, Jay

2018-03-01

Differential binary pixel technology is a threshold-based timing, readout, and image reconstruction method that utilizes the subframe partial charge transfer technique in a standard four-transistor (4T) pixel CMOS image sensor to achieve a high dynamic range video with stop motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21 dB. The method is verified in silicon using a Taiwan Semiconductor Manufacturing Company's 65 nm 1.1 μm pixel technology 1 megapixel test chip array and is compared with a traditional 4 × oversampling technique using full charge transfer to show low light SNR superiority of the presented technology.

A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Man-Chia; Perez, Aldo Pena; Kothapalli, Sri-Rajasekhar

This study presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 μm by 250 μm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables anmore » efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. Finally, the functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.« less

A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI

DOE PAGES

Chen, Man-Chia; Perez, Aldo Pena; Kothapalli, Sri-Rajasekhar; ...

2017-10-16

This study presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 μm by 250 μm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables anmore » efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. Finally, the functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.« less

CMOS imager for pointing and tracking applications

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

2006-01-01

Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy

NASA Astrophysics Data System (ADS)

Finger, G.; Baker, I.; Downing, M.; Alvarez, D.; Ives, D.; Mehrgan, L.; Meyer, M.; Stegmeier, J.; Weller, H. J.

2017-11-01

Large format near infrared HgCdTe 2Kx2K and 4Kx4K MBE arrays have reached a level of maturity which meets most of the specifications required for near infrared (NIR) astronomy. The only remaining problem is the persistence effect which is device specific and not yet fully under control. For ground based multi-object spectroscopy on 40 meter class telescopes larger pixels would be advantageous. For high speed near infrared fringe tracking and wavefront sensing the only way to overcome the CMOS noise barrier is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. A readout chip for a 320x256 pixel HgCdTe eAPD array will be presented which has 32 parallel video outputs being arranged in such a way that the full multiplex advantage is also available for small sub-windows. In combination with the high APD gain this allows reducing the readout noise to the subelectron level by applying nondestructive readout schemes with subpixel sampling. Arrays grown by MOVPE achieve subelectron readout noise and operate with superb cosmetic quality at high APD gain. Efforts are made to reduce the dark current of those arrays to make this technology also available for large format focal planes of NIR instruments offering noise free detectors for deep exposures. The dark current of the latest MOVPE eAPD arrays is already at a level adequate for noiseless broad and narrow band imaging in scientific instruments.

Development of radiation tolerant monolithic active pixel sensors with fast column parallel read-out

NASA Astrophysics Data System (ADS)

Koziel, M.; Dorokhov, A.; Fontaine, J.-C.; De Masi, R.; Winter, M.

2010-12-01

Monolithic active pixel sensors (MAPS) [1] (Turchetta et al., 2001) are being developed at IPHC—Strasbourg to equip the EUDET telescope [2] (Haas, 2006) and vertex detectors for future high energy physics experiments, including the STAR upgrade at RHIC [3] (T.S. Collaboration, 2005) and the CBM experiment at FAIR/GSI [4] (Heuser, 2006). High granularity, low material budget and high read-out speed are systematically required for most applications, complemented, for some of them, with high radiation tolerance. A specific column-parallel architecture, implemented in the MIMOSA-22 sensor, was developed to achieve fast read-out MAPS. Previous studies of the front-end architecture integrated in this sensor, which includes in-pixel amplification, have shown that the fixed pattern noise increase consecutive to ionizing radiation can be controlled by means of a negative feedback [5] (Hu-Guo et al., 2008). However, an unexpected rise of the temporal noise was observed. A second version of this chip (MIMOSA-22bis) was produced in order to search for possible improvements of the radiation tolerance, regarding this type of noise. In this prototype, the feedback transistor was tuned in order to mitigate the sensitivity of the pixel to ionizing radiation. The performances of the pixels after irradiation were investigated for two types of feedback transistors: enclosed layout transistor (ELT) [6] (Snoeys et al., 2000) and "standard" transistor with either large or small transconductance. The noise performance of all test structures was studied in various conditions (expected in future experiments) regarding temperature, integration time and ionizing radiation dose. Test results are presented in this paper. Based on these observations, ideas for further improvement of the radiation tolerance of column parallel MAPS are derived.

Electron imaging with Medipix2 hybrid pixel detector.

PubMed

McMullan, G; Cattermole, D M; Chen, S; Henderson, R; Llopart, X; Summerfield, C; Tlustos, L; Faruqi, A R

2007-01-01

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 microm x 55 microm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 microm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach approximately 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach approximately 35% of that expected for a perfect detector (4/pi(2)). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/pi). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected values for the MTF and DQE as a function of the threshold energy. The good agreement between theory and experiment allows suggestions for further improvements to be made with confidence. The present detector is already very useful for experiments that require a high DQE at very low doses.

Toward Large FOV High-Resolution X-Ray Imaging Spectrometer: Microwave Multiplexed Readout of 32 TES Microcalorimeters

NASA Technical Reports Server (NTRS)

Yoon, Wonsik; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Miniussi, Antoine R.;

6 x 6-cm fully depleted pn-junction CCD for high-resolution spectroscopy in the 0.1- to 15-keV photon energy range

NASA Astrophysics Data System (ADS)

von Zanthier, Christoph; Holl, Peter; Kemmer, Josef; Lechner, Peter; Maier, B.; Soltau, Heike; Stoetter, R.; Braeuninger, Heinrich W.; Dennerl, Konrad; Haberl, Frank; Hartmann, R.; Hartner, Gisela D.; Hippmann, H.; Kastelic, E.; Kink, W.; Krause, N.; Meidinger, Norbert; Metzner, G.; Pfeffermann, Elmar; Popp, M.; Reppin, Claus; Stoetter, Diana; Strueder, Lothar; Truemper, Joachim; Weber, U.; Carathanassis, D.; Engelhard, S.; Gebhart, Th.; Hauff, D.; Lutz, G.; Richter, R. H.; Seitz, H.; Solc, P.; Bihler, Edgar; Boettcher, H.; Kendziorra, Eckhard; Kraemer, J.; Pflueger, Bernhard; Staubert, Ruediger

1998-04-01

The concept and performance of the fully depleted pn- junction CCD system, developed for the European XMM- and the German ABRIXAS-satellite missions for soft x-ray imaging and spectroscopy in the 0.1 keV to 15 keV photon range, is presented. The 58 mm X 60 mm large pn-CCD array uses pn- junctions for registers and for the backside instead of MOS registers. This concept naturally allows to fully deplete the detector volume to make it an efficient detector to photons with energies up to 15 keV. For high detection efficiency in the soft x-ray region down to 100 eV, an ultrathin pn-CCD backside deadlayer has been realized. Each pn-CCD-channel is equipped with an on-chip JFET amplifier which, in combination with the CAMEX-amplifier and multiplexing chip, facilitates parallel readout with a pixel read rate of 3 MHz and an electronic noise floor of ENC < e-. With the complete parallel readout, very fast pn-CCD readout modi can be implemented in the system which allow for high resolution photon spectroscopy of even the brightest x-ray sources in the sky.

Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gjersdal, H.; /Oslo U.; Bolle, E.

2012-05-07

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, chargemore » sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.« less

Developments of Highly Multiplexed, Multi-chroic Pixels for Balloon-Borne Platforms

NASA Astrophysics Data System (ADS)

Aubin, F.; Hanany, S.; Johnson, B. R.; Lee, A.; Suzuki, A.; Westbrook, B.; Young, K.

2018-02-01

We present our work to develop and characterize low thermal conductance bolometers that are part of sinuous antenna multi-chroic pixels (SAMP). We use longer, thinner and meandered bolometer legs to achieve 9 pW/K thermal conductance bolometers. We also discuss the development of inductor-capacitor chips operated at 4 K to extend the multiplexing factor of the frequency domain multiplexing to 105, an increase of 60% compared to the factor currently demonstrated for this readout system. This technology development is motivated by EBEX-IDS, a balloon-borne polarimeter designed to characterize the polarization of foregrounds and to detect the primordial gravity waves through their B-mode signature on the polarization of the cosmic microwave background. EBEX-IDS will operate 20,562 transition edge sensor bolometers spread over 7 frequency bands between 150 and 360 GHz. Balloon and satellite platforms enable observations at frequencies inaccessible from the ground and with higher instantaneous sensitivity. This development improves the readiness of the SAMP and frequency domain readout technologies for future satellite applications.

Improved Space Object Observation Techniques Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

2013-08-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

Inexpensive Neutron Imaging Cameras Using CCDs for Astronomy

NASA Astrophysics Data System (ADS)

Hewat, A. W.

We have developed inexpensive neutron imaging cameras using CCDs originally designed for amateur astronomical observation. The low-light, high resolution requirements of such CCDs are similar to those for neutron imaging, except that noise as well as cost is reduced by using slower read-out electronics. For example, we use the same 2048x2048 pixel ;Kodak; KAI-4022 CCD as used in the high performance PCO-2000 CCD camera, but our electronics requires ∼5 sec for full-frame read-out, ten times slower than the PCO-2000. Since neutron exposures also require several seconds, this is not seen as a serious disadvantage for many applications. If higher frame rates are needed, the CCD unit on our camera can be easily swapped for a faster readout detector with similar chip size and resolution, such as the PCO-2000 or the sCMOS PCO.edge 4.2.

Self-adjusting threshold mechanism for pixel detectors

NASA Astrophysics Data System (ADS)

Heim, Timon; Garcia-Sciveres, Maurice

2017-09-01

Readout chips of hybrid pixel detectors use a low power amplifier and threshold discrimination to process charge deposited in semiconductor sensors. Due to transistor mismatch each pixel circuit needs to be calibrated individually to achieve response uniformity. Traditionally this is addressed by programmable threshold trimming in each pixel, but requires robustness against radiation effects, temperature, and time. In this paper a self-adjusting threshold mechanism is presented, which corrects the threshold for both spatial inequality and time variation and maintains a constant response. It exploits the electrical noise as relative measure for the threshold and automatically adjust the threshold of each pixel to always achieve a uniform frequency of noise hits. A digital implementation of the method in the form of an up/down counter and combinatorial logic filter is presented. The behavior of this circuit has been simulated to evaluate its performance and compare it to traditional calibration results. The simulation results show that this mechanism can perform equally well, but eliminates instability over time and is immune to single event upsets.

Test beam performance measurements for the Phase I upgrade of the CMS pixel detector

NASA Astrophysics Data System (ADS)

Dragicevic, M.; Friedl, M.; Hrubec, J.; Steininger, H.; Gädda, A.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Winkler, A.; Eerola, P.; Tuuva, T.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Vander Donckt, M.; Viret, S.; Bonnin, C.; Charles, L.; Gross, L.; Hosselet, J.; Tromson, D.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Pierschel, G.; Preuten, M.; Rauch, M.; Wlochal, M.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garay Garcia, J.; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schütze, P.; Sola, V.; Spannagel, S.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Klanner, R.; Lapsien, T.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmeyer, A.; Kudella, S.; Muller, Th.; Simonis, H. J.; Steck, P.; Weber, M.; Weiler, Th.; Kiss, T.; Siklér, F.; Tölyhi, T.; Veszprémi, V.; Cariola, P.; Creanza, D.; De Palma, M.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Saizu, M. A.; Tricomi, A.; Tuve, C.; Focardi, E.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ceccanti, M.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Magazzu, G.; Mammini, P.; Mariani, F.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Profeti, A.; Raffaelli, F.; Ragonesi, A.; Rizzi, A.; Soldani, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bonnaud, J.; Daguin, J.; D'Auria, A.; Detraz, S.; Dondelewski, O.; Engegaard, B.; Faccio, F.; Frank, N.; Gill, K.; Honma, A.; Kornmayer, A.; Labaza, A.; Manolescu, F.; McGill, I.; Mersi, S.; Michelis, S.; Onnela, A.; Ostrega, M.; Pavis, S.; Peisert, A.; Pernot, J.-F.; Petagna, P.; Postema, H.; Rapacz, K.; Sigaud, C.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Verlaat, B.; Vichoudis, P.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.-C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.-H.; Dietz, C.; Fiori, F.; Grundler, U.; Hou, W.-S.; Lu, R.-S.; Moya, M.; Tsai, J.-F.; Tzeng, Y. M.; Cussans, D.; Goldstein, J.; Grimes, M.; Newbold, D.; Hobson, P.; Reid, I. D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Hall, G.; James, T.; Magnan, A.-M.; Pesaresi, M.; Raymond, D. M.; Uchida, K.; Durkin, T.; Harder, K.; Shepherd-Themistocleous, C.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B. R.; Dominguez, A.; Bartek, R.; Bentele, B.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J. N.; Canepa, A.; Cheung, H. W. K.; Christian, D.; Cooper, W. E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Kwan, S.; Lei, C. M.; Lipton, R.; Lopes De Sá, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Siehl, K.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D. R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Gerber, C. E.; Makauda, S.; Mills, C.; Sandoval Gonzalez, I. D.; Alimena, J.; Antonelli, L. J.; Francis, B.; Hart, A.; Hill, C. S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D. H.; Shi, X.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Schmitz, E.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J. G.; Cremaldi, L. M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Monroy, J.; Siado, J.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Ramirez Vargas, J. E.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K. M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; D'Angelo, P.; Johns, W.; Rose, K.; Choudhury, S.; Korol, I.; Seitz, C.; Vargas Trevino, A.; Dolinska, G.

2017-05-01

A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC . The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is 99.95 ± 0.05%, while the intrinsic spatial resolutions are 4.80 ± 0.25 μm and 7.99 ± 0.21 μm along the 100 μm and 150 μm pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.

The Phase-II ATLAS ITk pixel upgrade

NASA Astrophysics Data System (ADS)

Terzo, S.

2017-07-01

The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase-II shutdown (foreseen to take place around 2025) by an all-silicon detector called the ``ITk'' (Inner Tracker). The innermost portion of ITk will consist of a pixel detector with five layers in the barrel region and ring-shaped supports in the end-cap regions. It will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation levels. The new pixel system could include up to 14 m2 of silicon, depending on the final layout, which is expected to be decided in 2017. Several layout options are being investigated at the moment, including some with novel inclined support structures in the barrel end-cap overlap region and others with very long innermost barrel layers. Forward coverage could be as high as |eta| <4. Supporting structures will be based on low mass, highly stable and highly thermally conductive carbon-based materials cooled by evaporative carbon dioxide circulated in thin-walled titanium pipes embedded in the structures. Planar, 3D, and CMOS sensors are being investigated to identify the optimal technology, which may be different for the various layers. The RD53 Collaboration is developing the new readout chip. The pixel off-detector readout electronics will be implemented in the framework of the general ATLAS trigger and DAQ system. A readout speed of up to 5 Gb/s per data link will be needed in the innermost layers going down to 640 Mb/s for the outermost. Because of the very high radiation level inside the detector, the first part of the transmission has to be implemented electrically, with signals converted for optical transmission at larger radii. Extensive tests are being carried out to prove the feasibility of implementing serial powering, which has been chosen as the baseline for the ITk pixel system due to the reduced material in the servicing cables foreseen for this option.

An Integrated Imaging Detector of Polarization and Spectral Content

NASA Technical Reports Server (NTRS)

Rust, D. M.; Thompson, K. E.

1993-01-01

A new type of image detector has been designed to simultaneously analyze the polarization of light at all picture elements in a scene. The Integrated Dual Imaging Detector (IDID) consists of a polarizing beamsplitter bonded to a charge-coupled device (CCD), with signal-analysis circuitry and analog-to-digital converters, all integrated on a silicon chip. It should be capable of 1:10(exp 4) polarization discrimination. The IDID should simplify the design and operation of imaging polarimeters and spectroscopic imagers used, for example, in atmospheric and solar research. Innovations in the IDID include (1) two interleaved 512 x 1024-pixel imaging arrays (one for each polarization plane); (2) large dynamic range (well depth of 10(exp 6) electrons per pixel); (3) simultaneous readout of both images at 10 million pixels per second each; (4) on-chip analog signal processing to produce polarization maps in real time; (5) on-chip 10-bit A/D conversion. When used with a lithium-niobate Fabry-Perot etalon or other color filter that can encode spectral information as polarization, the IDID can collect and analyze simultaneous images at two wavelengths. Precise photometric analysis of molecular or atomic concentrations in the atmosphere is one suggested application. When used in a solar telescope, the IDID will charge the polarization, which can then be converted to maps of the vector magnetic fields on the solar surface.

Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC

DOE PAGES

Demaria, N.

2016-12-21

This paper is a review of recent progress of RD53 Collaboration. Results obtained on the study of the radiation effects on 65 nm CMOS have matured enough to define first strategies to adopt in the design of analog and digital circuits. Critical building blocks and analog very front end chains have been designed, tested before and after 5–800 Mrad. Small prototypes of 64×64 pixels with complex digital architectures have been produced, and point to address the main issues of dealing with extremely high pixel rates, while operating at very small in-time thresholds in the analog front end. Lastly, the collaborationmore » is now proceeding at full speed towards the design of a large scale prototype, called RD53A, in 65 nm CMOS technology.« less

High resolution 1280×1024, 15 μm pitch compact InSb IR detector with on-chip ADC

NASA Astrophysics Data System (ADS)

Nesher, O.; Pivnik, I.; Ilan, E.; Calalhorra, Z.; Koifman, A.; Vaserman, I.; Oiknine Schlesinger, J.; Gazit, R.; Hirsh, I.

2009-05-01

Over the last decade, SCD has developed and manufactured high quality InSb Focal Plane Arrays (FPAs), which are currently used in many applications worldwide. SCD's production line includes many different types of InSb FPA with formats of 320x256, 480x384 and 640x512 elements and with pitch sizes in the range of 15 to 30 μm. All these FPAs are available in various packaging configurations, including fully integrated Detector-Dewar-Cooler Assemblies (DDCA) with either closed-cycle Sterling or open-loop Joule-Thomson coolers. With an increasing need for higher resolution, SCD has recently developed a new large format 2-D InSb detector with 1280x1024 elements and a pixel size of 15μm. The InSb 15μm pixel technology has already been proven at SCD with the "Pelican" detector (640x512 elements), which was introduced at the Orlando conference in 2006. A new signal processor was developed at SCD for use in this mega-pixel detector. This Readout Integrated Circuit (ROIC) is designed for, and manufactured with, 0.18 μm CMOS technology. The migration from 0.5 to 0.18 μm CMOS technology supports SCD's roadmap for the reduction of pixel size and power consumption and is in line with the increasing demand for improved performance and on-chip functionality. Consequently, the new ROIC maintains the same level of performance and functionality with a 15 μm pitch, as exists in our 20 μm-pitch ROICs based on 0.5μm CMOS technology. Similar to Sebastian (SCD ROIC with A/D on chip), this signal processor also includes A/D converters on the chip and demonstrates the same level of performance, but with reduced power consumption. The pixel readout rate has been increased up to 160 MHz in order to support a high frame rate, resulting in 120 Hz operation with a window of 1024×1024 elements at ~130 mW. These A/D converters on chip save the need for using 16 A/D channels on board (in the case of an analog ROIC) which would operate at 10 MHz and consume about 8Watts A Dewar has been designed with a stiffened detector support to withstand harsh environmental conditions with a minimal contribution to the heat load of the detector. The combination of the 0.18μm-based low power CMOS technology for the ROIC and the stiffening of the detector support within the Dewar has enabled the use of the Ricor K508 cryo-cooler (0.5 W). This has created a high-resolution detector in a very compact package. In this paper we present the basic concept of the new detector. We will describe its construction and will present electrical and radiometric characterization results.

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Results from the NA62 Gigatracker Prototype: A Low-Mass and sub-ns Time Resolution Silicon Pixel Detector

NASA Astrophysics Data System (ADS)

Fiorini, M.; Rinella, G. Aglieri; Carassiti, V.; Ceccucci, A.; Gil, E. Cortina; Ramusino, A. Cotta; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petagna, P.; Petrucci, F.; Perktold, L.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

The Gigatracker (GTK) is a hybrid silicon pixel detector developed for NA62, the experiment aimed at studying ultra-rare kaon decays at the CERN SPS. Three GTK stations will provide precise momentum and angular measurements on every track of the high intensity NA62 hadron beam with a time-tagging resolution of 150 ps. Multiple scattering and hadronic interactions of beam particles in the GTK have to be minimized to keep background events at acceptable levels, hence the total material budget is fixed to 0.5% X0 per station. In addition the calculated fluence for 100 days of running is 2×1014 1 MeV neq/cm2, comparable to the one expected for the inner trackers of LHC detectors in 10 years of operation. These requirements pose challenges for the development of an efficient and low-mass cooling system, to be operated in vacuum, and on the thinning of read-out chips to 100 μm or less. The most challenging requirement is represented by the time resolution, which can be achieved by carefully compensating for the discriminator time-walk. For this purpose, two complementary read-out architectures have been designed and produced as small-scale prototypes: the first is based on the use of a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other uses a constant-fraction discriminator followed by an on-pixel TDC. The readout pixel ASICs are produced in 130 nm IBM CMOS technology and bump-bonded to 200 μm thick silicon sensors. The Gigatracker detector system is described with particular emphasis on recent experimental results obtained from laboratory and beam tests of prototype bump-bonded assemblies, which show a time resolution of less than 200 ps for single hits.

A Readout Integrated Circuit (ROIC) employing self-adaptive background current compensation technique for Infrared Focal Plane Array (IRFPA)

NASA Astrophysics Data System (ADS)

Zhou, Tong; Zhao, Jian; He, Yong; Jiang, Bo; Su, Yan

2018-05-01

A novel self-adaptive background current compensation circuit applied to infrared focal plane array is proposed in this paper, which can compensate the background current generated in different conditions. Designed double-threshold detection strategy is to estimate and eliminate the background currents, which could significantly reduce the hardware overhead and improve the uniformity among different pixels. In addition, the circuit is well compatible to various categories of infrared thermo-sensitive materials. The testing results of a 4 × 4 experimental chip showed that the proposed circuit achieves high precision, wide application and high intelligence. Tape-out of the 320 × 240 readout circuit, as well as the bonding, encapsulation and imaging verification of uncooled infrared focal plane array, have also been completed.

A 400 KHz line rate 2048-pixel stitched SWIR linear array

NASA Astrophysics Data System (ADS)

Anchlia, Ankur; Vinella, Rosa M.; Gielen, Daphne; Wouters, Kristof; Vervenne, Vincent; Hooylaerts, Peter; Deroo, Pieter; Ruythooren, Wouter; De Gaspari, Danny; Das, Jo; Merken, Patrick

2016-05-01

Xenics has developed a family of stitched SWIR long linear arrays that operate up to 400 KHz of line rate. These arrays serve medical and industrial applications that require high line rates as well as space applications that require long linear arrays. The arrays are based on a modular ROIC design concept: modules of 512 pixels are stitched during fabrication to achieve 512, 1024 and 2048 pixel arrays. Each 512-pixel module has its own on-chip digital sequencer, analog readout chain and 4 output buffers. This modular concept enables a long array to run at a high line rates irrespective of the array length, which limits the line rate in a traditional linear array. The ROIC is flip-chipped with InGaAs detector arrays. The FPA has a pixel pitch of 12.5μm and has two pixel flavors: square (12.5μm) and rectangular (250μm). The frontend circuit is based on Capacitive Trans-impedance Amplifier (CTIA) to attain stable detector bias, and good linearity and signal integrity, especially at high speeds. The CTIA has an input auto-zero mechanism that allows to have low detector bias (<20mV). An on-chip Correlated Double Sample (CDS) facilitates removal of CTIA KTC and 1/f noise, and other offsets, achieving low noise performance. There are five gain modes in the FPA giving the full well range from 85Ke- to 40Me-. The measured input referred noise is 35e-rms in the highest gain mode. The FPA operates in Integrate While Read mode and, at a master clock rate of 60MHz and a minimum integration time of 1.4μs, achieves the highest line rate of 400 KHz. In this paper, design details and measurements results are presented in order to demonstrate the array performance.

SpectraCAM SPM: a camera system with high dynamic range for scientific and medical applications

NASA Astrophysics Data System (ADS)

Bhaskaran, S.; Baiko, D.; Lungu, G.; Pilon, M.; VanGorden, S.

2005-08-01

A scientific camera system having high dynamic range designed and manufactured by Thermo Electron for scientific and medical applications is presented. The newly developed CID820 image sensor with preamplifier-per-pixel technology is employed in this camera system. The 4 Mega-pixel imaging sensor has a raw dynamic range of 82dB. Each high-transparent pixel is based on a preamplifier-per-pixel architecture and contains two photogates for non-destructive readout of the photon-generated charge (NDRO). Readout is achieved via parallel row processing with on-chip correlated double sampling (CDS). The imager is capable of true random pixel access with a maximum operating speed of 4MHz. The camera controller consists of a custom camera signal processor (CSP) with an integrated 16-bit A/D converter and a PowerPC-based CPU running a Linux embedded operating system. The imager is cooled to -40C via three-stage cooler to minimize dark current. The camera housing is sealed and is designed to maintain the CID820 imager in the evacuated chamber for at least 5 years. Thermo Electron has also developed custom software and firmware to drive the SpectraCAM SPM camera. Included in this firmware package is the new Extreme DRTM algorithm that is designed to extend the effective dynamic range of the camera by several orders of magnitude up to 32-bit dynamic range. The RACID Exposure graphical user interface image analysis software runs on a standard PC that is connected to the camera via Gigabit Ethernet.

A novel digital image sensor with row wise gain compensation for Hyper Spectral Imager (HySI) application

NASA Astrophysics Data System (ADS)

Lin, Shengmin; Lin, Chi-Pin; Wang, Weng-Lyang; Hsiao, Feng-Ke; Sikora, Robert

2009-08-01

A 256x512 element digital image sensor has been developed which has a large pixel size, slow scan and low power consumption for Hyper Spectral Imager (HySI) applications. The device is a mixed mode, silicon on chip (SOC) IC. It combines analog circuitry, digital circuitry and optical sensor circuitry into a single chip. This chip integrates a 256x512 active pixel sensor array, a programming gain amplifier (PGA) for row wise gain setting, I2C interface, SRAM, 12 bit analog to digital convertor (ADC), voltage regulator, low voltage differential signal (LVDS) and timing generator. The device can be used for 256 pixels of spatial resolution and 512 bands of spectral resolution ranged from 400 nm to 950 nm in wavelength. In row wise gain readout mode, one can set a different gain on each row of the photo detector by storing the gain setting data on the SRAM thru the I2C interface. This unique row wise gain setting can be used to compensate the silicon spectral response non-uniformity problem. Due to this unique function, the device is suitable for hyper-spectral imager applications. The HySI camera located on-board the Chandrayaan-1 satellite, was successfully launched to the moon on Oct. 22, 2008. The device is currently mapping the moon and sending back excellent images of the moon surface. The device design and the moon image data will be presented in the paper.

Novel x-ray silicon detector for 2D imaging and high-resolution spectroscopy

NASA Astrophysics Data System (ADS)

Castoldi, Andrea; Gatti, Emilio; Guazzoni, Chiara; Longoni, Antonio; Rehak, Pavel; Strueder, Lothar

1999-10-01

A novel x-ray silicon detector for 2D imaging has been recently proposed. The detector, called Controlled-Drift Detector, is operated in integrate-readout mode. Its basic feature is the fast transport of the integrated charge to the output electrode by means of a uniform drift field. The drift time of the charge packet identifies the pixel of incidence. A new architecture to implement the Controlled- Drift Detector concept will be presented. The potential wells for the integration of the signal charge are obtained by means of a suitable pattern of deep n-implants and deep p-implants. During the readout mode the signal electrons are transferred in the drift channel that flanks each column of potential wells where they drift towards the collecting electrode at constant velocity. The first experimental measurements demonstrate the successful integration, transfer and drift of the signal electrons. The low output capacitance of the readout electrode together with the on- chip front-end electronics allows high resolution spectroscopy of the detected photons.

Test beam performance measurements for the Phase I upgrade of the CMS pixel detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragicevic, M.; Friedl, M.; Hrubec, J.

A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. Here in this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency ismore » $$99.95\\pm0.05\\,\\%$$, while the intrinsic spatial resolutions are $$4.80\\pm0.25\\,\\mu \\mathrm{m}$$ and $$7.99\\pm0.21\\,\\mu \\mathrm{m}$$ along the $$100\\,\\mu \\mathrm{m}$$ and $$150\\,\\mu \\mathrm{m}$$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.« less

Performance measurements of hybrid PIN diode arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.F.; Kramer, G.

We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 {times} 64 pixels, each 120 {mu}m square, and the other format having 256 {times} 256 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurementsmore » of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs.« less

Test beam performance measurements for the Phase I upgrade of the CMS pixel detector

DOE PAGES

Dragicevic, M.; Friedl, M.; Hrubec, J.; ...

2017-05-30

A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. Here in this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency ismore » $$99.95\\pm0.05\\,\\%$$, while the intrinsic spatial resolutions are $$4.80\\pm0.25\\,\\mu \\mathrm{m}$$ and $$7.99\\pm0.21\\,\\mu \\mathrm{m}$$ along the $$100\\,\\mu \\mathrm{m}$$ and $$150\\,\\mu \\mathrm{m}$$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.« less

A fast event preprocessor for the Simbol-X Low-Energy Detector

NASA Astrophysics Data System (ADS)

Schanz, T.; Tenzer, C.; Kendziorra, E.; Santangelo, A.

2008-07-01

The Simbol-X1 Low Energy Detector (LED), a 128 × 128 pixel DEPFET array, will be read out very fast (8000 frames/second). This requires a very fast onboard data preprocessing of the raw data. We present an FPGA based Event Preprocessor (EPP) which can fulfill this requirements. The design is developed in the hardware description language VHDL and can be later ported on an ASIC technology. The EPP performs a pixel related offset correction and can apply different energy thresholds to each pixel of the frame. It also provides a line related common-mode correction to reduce noise that is unavoidably caused by the analog readout chip of the DEPFET. An integrated pattern detector can block all invalid pixel patterns. The EPP has an internal pipeline structure and can perform all operation in realtime (< 2 μs per line of 64 pixel) with a base clock frequency of 100 MHz. It is utilizing a fast median-value detection algorithm for common-mode correction and a new pattern scanning algorithm to select only valid events. Both new algorithms were developed during the last year at our institute.

Digital radiography using amorphous selenium: photoconductively activated switch (PAS) readout system.

PubMed

Reznik, Nikita; Komljenovic, Philip T; Germann, Stephen; Rowlands, John A

2008-03-01

A new amorphous selenium (a-Se) digital radiography detector is introduced. The proposed detector generates a charge image in the a-Se layer in a conventional manner, which is stored on electrode pixels at the surface of the a-Se layer. A novel method, called photoconductively activated switch (PAS), is used to read out the latent x-ray charge image. The PAS readout method uses lateral photoconduction at the a-Se surface which is a revolutionary modification of the bulk photoinduced discharge (PID) methods. The PAS method addresses and eliminates the fundamental weaknesses of the PID methods--long readout times and high readout noise--while maintaining the structural simplicity and high resolution for which PID optical readout systems are noted. The photoconduction properties of the a-Se surface were investigated and the geometrical design for the electrode pixels for a PAS radiography system was determined. This design was implemented in a single pixel PAS evaluation system. The results show that the PAS x-ray induced output charge signal was reproducible and depended linearly on the x-ray exposure in the diagnostic exposure range. Furthermore, the readout was reasonably rapid (10 ms for pixel discharge). The proposed detector allows readout of half a pixel row at a time (odd pixels followed by even pixels), thus permitting the readout of a complete image in 30 s for a 40 cm x 40 cm detector with the potential of reducing that time by using greater readout light intensity. This demonstrates that a-Se based x-ray detectors using photoconductively activated switches could form a basis for a practical integrated digital radiography system.

MiniDSS: a low-power and high-precision miniaturized digital sun sensor

NASA Astrophysics Data System (ADS)

de Boer, B. M.; Durkut, M.; Laan, E.; Hakkesteegt, H.; Theuwissen, A.; Xie, N.; Leijtens, J. L.; Urquijo, E.; Bruins, P.

2017-11-01

A high-precision and low-power miniaturized digital sun sensor has been developed at TNO. The single-chip sun sensor comprises an application specific integrated circuit (ASIC) on which an active pixel sensor (APS), read-out and processing circuitry as well as communication circuitry are combined. The design was optimized for low recurrent cost. The sensor is albedo insensitive and the prototype combines an accuracy in the order of 0.03° with a mass of just 72 g and a power consumption of only 65 mW.

A pixelated charge readout for Liquid Argon Time Projection Chambers

NASA Astrophysics Data System (ADS)

Asaadi, J.; Auger, M.; Ereditato, A.; Goeldi, D.; Hänni, R.; Kose, U.; Kreslo, I.; Lorca, D.; Luethi, M.; von Rohr, C. Rudolf; Sinclair, J.; Stocker, F.; Tognina, C.; Weber, M.

2018-02-01

Liquid Argon Time Projection Chambers (LArTPCs) are ideally suited to perform long-baseline neutrino experiments aiming to measure CP violation in the lepton sector, and determine the ordering of the three neutrino mass eigenstates. LArTPCs have used projective wire readouts for charge detection since their conception in 1977. However, wire readouts are notoriously fragile and therefore a limiting factor in the design of any large mass detectors. Furthermore, a wire readout also introduces intrinsic ambiguities in event reconstruction. Within the ArgonCube concept—the liquid argon component of the DUNE near detector—we are developing a pixelated charge readout for LArTPCs. Pixelated charge readout systems represent the single largest advancement in the sensitivity of LArTPCs. They are mechanically robust and provide direct 3D readout, serving to minimise reconstruction ambiguities, enabling more advanced triggers, further reducing event pile-up and improving background rejection. This article presents first results from a pixelated LArTPC prototype built and operated in Bern.

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method.

PubMed

Chao, Calvin Yi-Ping; Tu, Honyih; Wu, Thomas Meng-Hsiu; Chou, Kuo-Yu; Yeh, Shang-Fu; Yin, Chin; Lee, Chih-Lin

2017-11-23

A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distribution is directly linked to the RTN from the pixel source follower (SF). The full 8.3 Mpixels are classified into four categories according to the observed RTN histogram peaks. A theoretical formula describing the RTN as a function of the time difference between the two phases of the correlated double sampling (CDS) is derived and validated by measured data. An on-chip time constant extraction method is developed and applied to the RTN analysis. The effects of readout circuit bandwidth on the settling ratios of the RTN histograms are investigated and successfully accounted for in a simulation using a RTN behavior model.

Application of the Medipix2 technology to space radiation dosimetry and hadron therapy beam monitoring

NASA Astrophysics Data System (ADS)

Pinsky, Lawrence; Stoffle, Nicholas; Jakubek, Jan; Pospisil, Stanislav; Leroy, Claude; Gutierrez, Andrea; Kitamura, Hisashi; Yasuda, Nakahiro; Uchihori, Yulio

2011-02-01

The Medipix2 Collaboration, based at CERN, has developed the TimePix version of the Medipix pixel readout chip, which has the ability to provide either an ADC or TDC capability separately in each of its 256×256 pixels. When coupled to a Si detector layer, the device is an excellent candidate for application as an active dosimeter for use in space radiation environments. In order to facilitate such a development, data have been taken with heavy ions at the HIMAC facility in Chiba, Japan. In particular, the problem of determining the resolution of such a detector system with respect to heavy ions of differing charges and energies, but with similar d E/d x values has been explored for several ions. The ultimate problem is to parse the information in the pixel "footprint" images from the drift of the charge cloud produced in the detector layer. In addition, with the use of convertor materials, the detector can be used as a neutron detector, and it has been used both as a charged particle and neutron detector to evaluate the detailed properties of the radiation fields produced by hadron therapy beams. New versions of the basic chip design are ongoing.

Characterisation of GaAs:Cr pixel sensors coupled to Timepix chips in view of synchrotron applications

NASA Astrophysics Data System (ADS)

Ponchut, C.; Cotte, M.; Lozinskaya, A.; Zarubin, A.; Tolbanov, O.; Tyazhev, A.

2017-12-01

In order to meet the needs of some ESRF beamlines for highly efficient 2D X-ray detectors in the 20-50 keV range, GaAs:Cr pixel sensors coupled to TIMEPIX readout chips were implemented into a MAXIPIX detector. Use of GaAs:Cr sensor material is intended to overcome the limitations of Si (low absorption) and of CdTe (fluorescence) in this energy range The GaAs:Cr sensor assemblies were characterised with both laboratory X-ray sources and monochromatic synchrotron X-ray beams. The sensor response as a function of bias voltage was compared to a theoretical model, leading to an estimation of the μτ product of electrons in GaAs:Cr sensor material of 1.6×10-4 cm2/V. The spatial homogeneity of X-ray images obtained with the sensors was measured in different irradiation conditions, showing a particular sensitivity to small variations in the incident beam spectrum. 2D-resolved elemental mapping of the sensor surface was carried out to investigate a possible relation between the noise pattern observed in X-ray images and local fluctuations in chemical composition. A scanning of the sensor response at subpixel scale revealed that these irregularities can be correlated with a distortion of the effective pixel shapes.

Characterization of Kilopixel TES detector arrays for PIPER

NASA Astrophysics Data System (ADS)

Datta, Rahul; Ade, Peter; Benford, Dominic; Bennett, Charles; Chuss, David; Costen, Nicholas; Coughlin, Kevin; Dotson, Jessie; Eimer, Joseph; Fixsen, Dale; Gandilo, Natalie; Halpern, Mark; Essinger-Hileman, Thomas; Hilton, Gene; Hinshaw, Gary; Irwin, Kent; Jhabvala, Christine; Kimball, Mark; Kogut, Al; Lazear, Justin; Lowe, Luke; Manos, George; McMahon, Jeff; Miller, Timothy; Mirel, Paul; Moseley, Samuel Harvey; Pawlyk, Samuel; Rodriguez, Samelys; Sharp, Elmer; Shirron, Peter; Staguhn, Johannes G.; Sullivan, Dan; Switzer, Eric; Taraschi, Peter; Tucker, Carole; Walts, Alexander; Wollack, Edward

2018-01-01

The Primordial Inflation Polarization ExploreR (PIPER) is a balloon-borne instrument optimized to measure the polarization of the Cosmic Microwave Background (CMB) at large angular scales. It will map 85% of the sky in four frequency bands centered at 200, 270, 350, and 600 GHz to characterize dust foregrounds and constrain the tensor-to-scalar ratio, r. The sky is imaged on to 32x40 pixel arrays of time-domain multiplexed Transition-Edge Sensor (TES) bolometers operating at a bath temperature of 100 mK to achieve background-limited sensitivity. Each kilopixel array is indium-bump-bonded to a 2D superconducting quantum interference device (SQUID) time-domain multiplexer (MUX) chip and read out by warm electronics. Each pixel measures total incident power over a frequency band defined by bandpass filters in front of the array, while polarization sensitivity is provided by the upstream Variable-delay Polarization Modulators (VPMs) and analyzer grids. We present measurements of the detector parameters from the laboratory characterization of the first kilopixel science array for PIPER including transition temperature, saturation power, thermal conductivity, time constant, and noise performance. We also describe the testing of the 2D MUX chips, optimization of the integrated readout parameters, and the overall pixel yield of the array. The first PIPER science flight is planned for June 2018 from Palestine, Texas.

A FPGA-based Cluster Finder for CMOS Monolithic Active Pixel Sensors of the MIMOSA-26 Family

NASA Astrophysics Data System (ADS)

Li, Qiyan; Amar-Youcef, S.; Doering, D.; Deveaux, M.; Fröhlich, I.; Koziel, M.; Krebs, E.; Linnik, B.; Michel, J.; Milanovic, B.; Müntz, C.; Stroth, J.; Tischler, T.

2014-06-01

CMOS Monolithic Active Pixel Sensors (MAPS) demonstrated excellent performances in the field of charged particle tracking. Among their strong points are an single point resolution few μm, a light material budget of 0.05% X0 in combination with a good radiation tolerance and high rate capability. Those features make the sensors a valuable technology for vertex detectors of various experiments in heavy ion and particle physics. To reduce the load on the event builders and future mass storage systems, we have developed algorithms suited for preprocessing and reducing the data streams generated by the MAPS. This real-time processing employs remaining free resources of the FPGAs of the readout controllers of the detector and complements the on-chip data reduction circuits of the MAPS.

A back-illuminated megapixel CMOS image sensor

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

2005-01-01

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

Silicon pixel-detector R&D for CLIC

NASA Astrophysics Data System (ADS)

Nürnberg, A.

2016-11-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (~ 0.2%X0 per layer for the vertex region and ~ 1%X0 per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50 μm to 150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 6525 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs.

Progress on TSV technology for Medipix3RX chip

NASA Astrophysics Data System (ADS)

Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Fritzsch, T.; Zoschke, K.; Graafsma, H.

2017-12-01

The progress of Through Silicon Via (TSV) technology for Medipix3RX chip done at DESY is presented here. The goal of this development is to replace the wire bonds in X-ray detectors with TSVs, in order to reduce the dead area between detectors. We obtained the first working chips assembled together with Si based sensors for X-ray detection. The 3D integration technology, including TSV, Re-distribution layer deposition, bump bonding to the Si sensor and bump bonding to the carrier PCB, was done by Fraunhofer Institute IZM in Berlin. After assembly, the module was successfully tested by recording background radiation and making X-ray images of small objects. The active area of the Medipix3RX chip is 14.1 mm×14.1 mm or 256×256 pixels. During TSV processing, the Medipix3RX chip was thinned from 775 μm original thickness, to 130 μm. The diameter of the vias is 40 μm, and the pitch between the vias is 120 μm. A liner filling approach was used to contact the TSV with the RDL on the backside of the Medipix3RX readout chip.

Development of a 750x750 pixels CMOS imager sensor for tracking applications

NASA Astrophysics Data System (ADS)

Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

2017-11-01

Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on-chip control and timing function) enabling a high flexibility architecture, make this imager a good candidate for high performance tracking applications.

MEDIPIX: a VLSI chip for a GaAs pixel detector for digital radiology

NASA Astrophysics Data System (ADS)

Amendolia, S. R.; Bertolucci, E.; Bisogni, M. G.; Bottigli, U.; Ceccopieri, A.; Ciocci, M. A.; Conti, M.; Delogu, P.; Fantacci, M. E.; Maestro, P.; Marzulli, V.; Pernigotti, E.; Romeo, N.; Rosso, V.; Rosso, P.; Stefanini, A.; Stumbo, S.

1999-02-01

A GaAs pixel detector designed for digital mammography, equipped with a 36-channel single photon counting discrete read-out electronics, was tested using a test object developed for quality control purposes in mammography. Each pixel was 200×200 μm 2 large, and 200 μm deep. The choice of GaAs with respect to silicon (largely used in other applications and with a more established technique) has been made because of the much better detection efficiency at mammographic energies, combined with a very good charge collection efficiency achieved thanks to new ohmic contacts. This GaAs detector is able to perform a measurement of low-contrast details, with minimum contrast lower (nearly a factor two) than that typically achievable with standard mammographic film+screen systems in the same conditions of clinical routine. This should allow for an earlier diagnosis of breast tumour masses. Due to these encouraging results, the next step in the evolution of our imaging system based on GaAs detectors has been the development of a VLSI front-end prototype chip (MEDIPIX ) in order to cover a much larger diagnostic area. The chip reads 64×64 channels in single photon counting mode, each one 170 μm wide. Each channel contains also a test input where a signal can be simulated, injecting a known charge through a 16 f F capacitor. Fake signals have been injected via the test input measuring and equalizing minimum thresholds for all the channels. On an average, in most of the performing chips available up to now, we have found that it is possible to set a threshold as low as 1800 electrons with an RMS of 150 electrons (10 standard deviations lower than the 20 keV photon signal roughly equivalent to 4500 electrons). The detector, bump-bonded to the chip, will be tested and a ladder of detectors will be prepared to be able to scan large surface objects.

Fully depleted CMOS pixel sensor development and potential applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudot, J.; Kachel, M.; CNRS, UMR7178, 67037 Strasbourg

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) highmore » resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a low noise figure. Especially, an energy resolution of about 400 eV for 5 keV X-rays was obtained for single pixels. The prototypes have then been exposed to gradually increased fluences of neutrons, from 10{sup 13} to 5x10{sup 14} neq/cm{sup 2}. Again laboratory tests allowed to evaluate the signal over noise persistence on the different pixels implemented. Currently our development mostly targets the detection of soft X-rays, with the ambition to develop a pixel sensor matching counting rates as affordable with hybrid pixel sensors, but with an extended sensitivity to low energy and finer pixel about 25 x 25 μm{sup 2}. The original readout architecture proposed relies on a two tiers chip. The first tier consists of a sensor with a modest dynamic in order to insure low noise performances required by sensitivity. The interconnected second tier chip enhances the read-out speed by introducing massive parallelization. Performances reachable with this strategy combining counting and integration will be detailed. (authors)« less

Design and implementation of Gm-APD array readout integrated circuit for infrared 3D imaging

NASA Astrophysics Data System (ADS)

Zheng, Li-xia; Yang, Jun-hao; Liu, Zhao; Dong, Huai-peng; Wu, Jin; Sun, Wei-feng

2013-09-01

A single-photon detecting array of readout integrated circuit (ROIC) capable of infrared 3D imaging by photon detection and time-of-flight measurement is presented in this paper. The InGaAs avalanche photon diodes (APD) dynamic biased under Geiger operation mode by gate controlled active quenching circuit (AQC) are used here. The time-of-flight is accurately measured by a high accurate time-to-digital converter (TDC) integrated in the ROIC. For 3D imaging, frame rate controlling technique is utilized to the pixel's detection, so that the APD related to each pixel should be controlled by individual AQC to sense and quench the avalanche current, providing a digital CMOS-compatible voltage pulse. After each first sense, the detector is reset to wait for next frame operation. We employ counters of a two-segmental coarse-fine architecture, where the coarse conversion is achieved by a 10-bit pseudo-random linear feedback shift register (LFSR) in each pixel and a 3-bit fine conversion is realized by a ring delay line shared by all pixels. The reference clock driving the LFSR counter can be generated within the ring delay line Oscillator or provided by an external clock source. The circuit is designed and implemented by CSMC 0.5μm standard CMOS technology and the total chip area is around 2mm×2mm for 8×8 format ROIC with 150μm pixel pitch. The simulation results indicate that the relative time resolution of the proposed ROIC can achieve less than 1ns, and the preliminary test results show that the circuit function is correct.

USB 3.0 readout and time-walk correction method for Timepix3 detector

NASA Astrophysics Data System (ADS)

Turecek, D.; Jakubek, J.; Soukup, P.

2016-12-01

The hybrid particle counting pixel detectors of Medipix family are well known. In this contribution we present new USB 3.0 based interface AdvaDAQ for Timepix3 detector. The AdvaDAQ interface is designed with a maximal emphasis to the flexibility. It is successor of FitPIX interface developed in IEAP CTU in Prague. Its modular architecture supports all Medipix/Timepix chips and all their different readout modes: Medipix2, Timepix (serial and parallel), Medipix3 and Timepix3. The high bandwidth of USB 3.0 permits readout of 1700 full frames per second with Timepix or 8 channel data acquisition from Timepix3 at frequency of 320 MHz. The control and data acquisition is integrated in a multiplatform PiXet software (MS Windows, Mac OS, Linux). In the second part of the publication a new method for correction of the time-walk effect in Timepix3 is described. Moreover, a fully spectroscopic X-ray imaging with Timepix3 detector operated in the ToT mode (Time-over-Threshold) is presented. It is shown that the AdvaDAQ's readout speed is sufficient to perform spectroscopic measurement at full intensity of radiographic setups equipped with nano- or micro-focus X-ray tubes.

Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

NASA Astrophysics Data System (ADS)

Plimley, Brian; Coffer, Amy; Zhang, Yigong; Vetter, Kai

2016-08-01

Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

NASA Astrophysics Data System (ADS)

Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

2018-01-01

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

NASA Astrophysics Data System (ADS)

Fu, Y.; Hu-Guo, C.; Dorokhov, A.; Pham, H.; Hu, Y.

2013-07-01

In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80 μm×16 μm was fabricated in a 0.18 μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors.

Large CMOS imager using hadamard transform based multiplexing

NASA Technical Reports Server (NTRS)

Karasik, Boris S.; Wadsworth, Mark V.

2005-01-01

We have developed a concept design for a large (10k x 10k) CMOS imaging array whose elements are grouped in small subarrays with N pixels in each. The subarrays are code-division multiplexed using the Hadamard Transform (HT) based encoding. The Hadamard code improves the signal-to-noise (SNR) ratio to the reference of the read-out amplifier by a factor of N^1/2. This way of grouping pixels reduces the number of hybridization bumps by N. A single chip layout has been designed and the architecture of the imager has been developed to accommodate the HT base multiplexing into the existing CMOS technology. The imager architecture allows for a trade-off between the speed and the sensitivity. The envisioned imager would operate at a speed >100 fps with the pixel noise < 20 e-. The power dissipation would be 100 pW/pixe1. The combination of the large format, high speed, high sensitivity and low power dissipation can be very attractive for space reconnaissance applications.

Overview of the ATLAS Insertable B-Layer (IBL) Project

NASA Astrophysics Data System (ADS)

Kagan, M. A.

2014-06-01

The first upgrade for the Pixel Detector will be a new pixel layer which is currently under construction and will be installed during the first shutdown of the LHC machine, in 2013-14. The new detector, called the Insertable B-layer (IBL), will be installed between the existing Pixel Detector and a new, smaller radius beam-pipe. Two different silicon sensor technologies, planar n-in-n and 3D, will be used, connected with the new generation 130nm IBM CMOS FE-I4 readout chip via solder bump-bonds. A production quality control test bench was set up in the ATLAS inner detector assembly clean room to verify and rate the performance of the detector elements before integration around the beam-pipe. An overview of the IBL project, of the module design, the qualification for these sensor technologies, the integration quality control setups and recent results in the construction of this full scale new concept detector is discussed.

Low-Light-Level InGaAs focal plane arrays with and without illumination

NASA Astrophysics Data System (ADS)

Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

2010-04-01

Short wavelength IR imaging using InGaAs-based FPAs is shown. Aerius demonstrates low dark current in InGaAs detector arrays with 15 μm pixel pitch. The same material is mated with a 640x 512 CTIA-based readout integrated circuit. The resulting FPA is capable of imaging photon fluxes with wavelengths between 1 and 1.6 microns at low light levels. The mean dark current density on the FPAs is extremely low at 0.64 nA/cm2 at 10°C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling (CDS). In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide speckle-free illumination, provide artifact-free imagery versus conventional laser illuminators.

Readout and DAQ for Pixel Detectors

NASA Astrophysics Data System (ADS)

Platkevic, Michal

2010-01-01

Data readout and acquisition control of pixel detectors demand the transfer of significantly a large amounts of bits between the detector and the computer. For this purpose dedicated interfaces are used which are designed with focus on features like speed, small dimensions or flexibility of use such as digital signal processors, field-programmable gate arrays (FPGA) and USB communication ports. This work summarizes the readout and DAQ system built for state-of-the-art pixel detectors of the Medipix family.

CCD developments for particle colliders

NASA Astrophysics Data System (ADS)

Stefanov, Konstantin D.

2006-09-01

Charge Coupled Devices (CCDs) have been successfully used in several high-energy physics experiments over the last 20 years. Their small pixel size and excellent precision provide superb tool for studying of short-lived particles and understanding the nature at fundamental level. Over the last years the Linear Collider Flavour Identification (LCFI) collaboration has developed Column-Parallel CCDs (CPCCD) and CMOS readout chips to be used for the vertex detector at the International Linear Collider (ILC). The CPCCDs are very fast devices capable of satisfying the challenging requirements imposed by the beam structure of the superconducting accelerator. First set of prototype devices have been designed, manufactured and successfully tested, with second-generation chips on the way. Another idea for CCD-based device, the In-situ Storage Image Sensor (ISIS) is also under development and the first prototype is in production.

CCD-based vertex detector for ILC

NASA Astrophysics Data System (ADS)

Stefanov, Konstantin D.

2006-12-01

Charge Coupled Devices (CCDs) have been successfully used in several high-energy physics experiments over the last 20 years. Their small pixel size and excellent precision provide a superb tool for studying of short-lived particles and understanding the nature at fundamental level. Over the last few years the Linear Collider Flavour Identification (LCFI) collaboration has developed Column-Parallel CCDs (CPCCD) and CMOS readout chips, to be used for the vertex detector at the International Linear Collider (ILC). The CPCCDs are very fast devices capable of satisfying the challenging requirements imposed by the beam structure of the superconducting accelerator. The first set of prototype devices have been successfully designed, manufactured and tested, with second generation chips on the way. Another idea for CCD-based device, the In-situ Storage Image Sensor (ISIS) is also under development and the first prototype has been manufactured.

640 X 480 PtSi MOS infrared imager

NASA Astrophysics Data System (ADS)

Sauer, Donald J.; Shallcross, Frank V.; Hseuh, Fu-Lung; Meray, Grazyna M.; Levine, Peter A.; Gilmartin, Harvey R.; Villani, Thomas S.; Esposito, Benjamin J.; Tower, John R.

1992-09-01

The design and performance of a 640 (H) X 480 (V) element PtSi Schottky-barrier infrared image sensor employing a low-noise MOS X-Y addressable readout multiplexer and on-chip low-noise output amplifier is described. The imager achieves an NEDT equals 0.10 K at 30 Hz frame rates with f/1.5 optics (300 K background). The MOS design provides a measured saturation level of 1.5 X 10(superscript 6) electrons (5 V bias) and a noise floor of 300 rms electrons per pixel. A multiplexed horizontal/vertical input address port and on-chip decoding is used to load scan data into CMOS horizontal and vertical scanning registers. This allows random access to any sub-frame in the 640 X 480 element focal plane array. By changing the digital pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or non-interlaced format, and the integration time may be varied over a wide range (60 microsecond(s) to > 30 ms, for RS 170 operation) resulting in `electronic shutter' variable exposure control. The pixel size of 24 micrometers X 24 micrometers results in a fill factor of 38% for 1.5 micrometers process design rules. The overall die size for the IR imager is 13.7 mm X 17.2 mm. All digital inputs to the chip are TTL compatible and include ESD protection.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Comparison of two optimized readout chains for low light CIS

NASA Astrophysics Data System (ADS)

Boukhayma, A.; Peizerat, A.; Dupret, A.; Enz, C.

2014-03-01

We compare the noise performance of two optimized readout chains that are based on 4T pixels and featuring the same bandwidth of 265kHz (enough to read 1Megapixel with 50frame/s). Both chains contain a 4T pixel, a column amplifier and a single slope analog-to-digital converter operating a CDS. In one case, the pixel operates in source follower configuration, and in common source configuration in the other case. Based on analytical noise calculation of both readout chains, an optimization methodology is presented. Analytical results are confirmed by transient simulations using 130nm process. A total input referred noise bellow 0.4 electrons RMS is reached for a simulated conversion gain of 160μV/e-. Both optimized readout chains show the same input referred 1/f noise. The common source based readout chain shows better performance for thermal noise and requires smaller silicon area. We discuss the possible drawbacks of the common source configuration and provide the reader with a comparative table between the two readout chains. The table contains several variants (column amplifier gain, in-pixel transistor sizes and type).

Measurements with Si and GaAs pixel detectors bonded to photon counting readout chips

NASA Astrophysics Data System (ADS)

Schwarz, C.; Campbell, M.; Goeppert, R.; Ludwig, J.; Mikulec, B.; Runge, K.; Smith, K. M.; Snoeys, W.

2001-06-01

Detectors fabricated with SI-GaAs and Si bulk material were bonded to Photon Counting Chips (PCC), developed in the framework of the MEDIPIX Collaboration. The PCC consists of a matrix of 64×64 identical square pixels (170 μm×170 μm) with a 15-bit counter in each cell. We investigated the imaging properties of these detector systems under exposure of a dental X-ray tube at room temperature. The image homogeneity and the mean count rate were determined via flood exposure images and compared. Exposures for GaAs detectors exhibit a 3 times larger spread in count rate per image in comparison to Si detectors. This also results in a 3 times worse signal to noise ratio. IV-characteristics and X-ray images at different values of the detectors bias voltage were also taken and show a 30 times higher leakage current for GaAs. The Si detector is fully active beginning from 70 V, whereas the GaAs detector does not reach full charge collection. The presampling modulation transfer function of both assembly types was measured via slit images and gives a spatial resolution of 4.3 lp/mm for both detector systems.

A high efficiency readout architecture for a large matrix of pixels.

NASA Astrophysics Data System (ADS)

Gabrielli, A.; Giorgi, F.; Villa, M.

2010-07-01

In this work we present a fast readout architecture for silicon pixel matrix sensors that has been designed to sustain very high rates, above 1 MHz/mm2 for matrices greater than 80k pixels. This logic can be implemented within MAPS (Monolithic Active Pixel Sensors), a kind of high resolution sensor that integrates on the same bulk the sensor matrix and the CMOS logic for readout, but it can be exploited also with other technologies. The proposed architecture is based on three main concepts. First of all, the readout of the hits is performed by activating one column at a time; all the fired pixels on the active column are read, sparsified and reset in parallel in one clock cycle. This implies the use of global signals across the sensor matrix. The consequent reduction of metal interconnections improves the active area while maintaining a high granularity (down to a pixel pitch of 40 μm). Secondly, the activation for readout takes place only for those columns overlapping with a certain fired area, thus reducing the sweeping time of the whole matrix and reducing the pixel dead-time. Third, the sparsification (x-y address labeling of the hits) is performed with a lower granularity with respect to single pixels, by addressing vertical zones of 8 pixels each. The fine-grain Y resolution is achieved by appending the zone pattern to the zone address of a hit. We show then the benefits of this technique in presence of clusters. We describe this architecture from a schematic point of view, then presenting the efficiency results obtained by VHDL simulations.

Cameras for digital microscopy.

PubMed

Spring, Kenneth R

2013-01-01

This chapter reviews the fundamental characteristics of charge-coupled devices (CCDs) and related detectors, outlines the relevant parameters for their use in microscopy, and considers promising recent developments in the technology of detectors. Electronic imaging with a CCD involves three stages--interaction of a photon with the photosensitive surface, storage of the liberated charge, and readout or measurement of the stored charge. The most demanding applications in fluorescence microscopy may require as much as four orders of greater magnitude sensitivity. The image in the present-day light microscope is usually acquired with a CCD camera. The CCD is composed of a large matrix of photosensitive elements (often referred to as "pixels" shorthand for picture elements, which simultaneously capture an image over the entire detector surface. The light-intensity information for each pixel is stored as electronic charge and is converted to an analog voltage by a readout amplifier. This analog voltage is subsequently converted to a numerical value by a digitizer situated on the CCD chip, or very close to it. Several (three to six) amplifiers are required for each pixel, and to date, uniform images with a homogeneous background have been a problem because of the inherent difficulties of balancing the gain in all of the amplifiers. Complementary metal oxide semiconductor sensors also exhibit relatively high noise associated with the requisite high-speed switching. Both of these deficiencies are being addressed, and sensor performance is nearing that required for scientific imaging. Copyright © 1998 Elsevier Inc. All rights reserved.

Toward Large Field-of-View High-Resolution X-ray Imaging Spectrometers: Microwave Multiplexed Readout of 28 TES Microcalorimeters

NASA Astrophysics Data System (ADS)

Yoon, W.; Adams, J. S.; Bandler, S. R.; Becker, D.; Bennett, D. A.; Chervenak, J. A.; Datesman, A. M.; Eckart, M. E.; Finkbeiner, F. M.; Fowler, J. W.; Gard, J. D.; Hilton, G. C.; Kelley, R. L.; Kilbourne, C. A.; Mates, J. A. B.; Miniussi, A. R.; Moseley, S. H.; Noroozian, O.; Porter, F. S.; Reintsema, C. D.; Sadleir, J. E.; Sakai, K.; Smith, S. J.; Stevenson, T. R.; Swetz, D. S.; Ullom, J. N.; Vale, L. R.; Wakeham, N. A.; Wassell, E. J.; Wollack, E. J.

2018-04-01

We performed small-scale demonstrations at GSFC of high-resolution X-ray TES microcalorimeters read out using a microwave SQUID multiplexer. This work is part of our effort to develop detector and readout technologies for future space-based X-ray instruments such as the microcalorimeter spectrometer envisaged for Lynx, a large mission concept under development for the Astro 2020 Decadal Survey. In this paper we describe our experiment, including details of a recently designed, microwave-optimized low-temperature setup that is thermally anchored to the 55 mK stage of our laboratory ADR. Using a ROACH2 FPGA at room temperature, we read out pixels of a GSFC-built detector array via a NIST-built multiplexer chip with Nb coplanar waveguide resonators coupled to rf-SQUIDs. The resonators are spaced 6 MHz apart (at ˜ 5.9 GHz) and have quality factors of ˜ 15,000. In our initial demonstration, we used flux-ramp modulation frequencies of 125 kHz to read out 5 pixels simultaneously and achieved spectral resolutions of 2.8-3.1 eV FWHM at 5.9 keV. Our subsequent work is ongoing: to-date we have achieved a median spectral resolution of 3.4 eV FWHM at 5.9 keV while reading out 28 pixels simultaneously with flux-ramp frequencies of 160 kHz. We present the measured system-level noise and maximum slew rates and briefly describe our future development work.

A 400 KHz line rate 2048 pixel modular SWIR linear array for earth observation applications

NASA Astrophysics Data System (ADS)

Anchlia, Ankur; Vinella, Rosa M.; Wouters, Kristof; Gielen, Daphne; Hooylaerts, Peter; Deroo, Pieter; Ruythooren, Wouter; van der Zanden, Koen; Vermeiren, Jan; Merken, Patrick

2015-10-01

In this paper, we report about a family of linear imaging FPAs sensitive in the [0.9 - 1.7um] band, developed for high speed applications such as LIDAR, wavelength references and OCT analyzers and also for earth observation applications. Fast linear FPAs can also be used in a wide variety of terrestrial applications, including high speed sorting, electro- and photo-luminesce and medical applications. The arrays are based on a modular ROIC design concept: modules of 512 pixels are stitched during fabrication to achieve 512, 1024 and 2048 pixel arrays. In principle, this concept can be extended to any multiple of 512 pixels, the limiting factor being the pixel yield of long InGaAs arrays and the CTE differences in the hybrid setup. Each 512-pixel module has its own on-chip digital sequencer, analog readout chain and 4 output buffers. This modular concept enables a long-linear array to run at a high line rate of 400 KHz irrespective of the array length, which limits the line rate in a traditional linear array. The pixel has a pitch of 12.5um. The detector frontend is based on CTIA (Capacitor Trans-impedance Amplifier), having 5 selectable integration capacitors giving full well from 62x103e- (gain0) to 40x106e- (gain4). An auto-zero circuit limits the detector bias non-uniformity to 5-10mV across broad intensity levels, limiting the input referred dark signal noise to 20e-rms for Tint=3ms at room temperature. An on-chip CDS that follows the CTIA facilitates removal of Reset/KTC noise, CTIA offsets and most of the 1/f noise. The measured noise of the ROIC is 35e-rms in gain0. At a master clock rate of 60MHz and a minimum integration time of 1.4us, the FPAs reach the highest line rate of 400 KHz.

Development of a novel direct X-ray detector using photoinduced discharge (PID) readout for digital radiography

NASA Astrophysics Data System (ADS)

Heo, D.; Jeon, S.; Kim, J.-S.; Kim, R. K.; Cha, B. K.; Moon, B. J.; Yoon, J.

2013-02-01

We developed a novel direct X-ray detector using photoinduced discharge (PID) readout for digital radiography. The pixel resolution is 512 × 512 with 200 μm pixel and the overall active dimensions of the X-ray imaging panel is 10.24 cm × 10.24 cm. The detector consists of an X-ray absorption layer of amorphous selenium, a charge accumulation layer of metal, and a PID readout layer of amorphous silicon. In particular, the charge accumulation is pixelated because image charges generated by X-ray should be stored pixel by pixel. Here the image charges, or holes, are recombined with electrons generated by the PID method. We used a 405 nm laser diode and cylindrical lens to make a line beam source with a width of 50 μm for PID readout, which generates charges for each pixel lines during the scan. We obtained spatial frequencies of about 1.0 lp/mm for the X-direction (lateral direction) and 0.9 lp/mm for the Y-direction (scanning direction) at 50% modulation transfer function.

Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

NASA Astrophysics Data System (ADS)

Elsobky, Mourad; Mahsereci, Yigit; Keck, Jürgen; Richter, Harald; Burghartz, Joachim N.

2017-09-01

Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI) substrate to form a Hybrid System-in-Foil (HySiF), which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing) of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA) in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC). The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC), a differential difference amplifier (DDA), and a 10-bit successive approximation register (SAR) ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

A real-time spectrum acquisition system design based on quantum dots-quantum well detector

NASA Astrophysics Data System (ADS)

Zhang, S. H.; Guo, F. M.

2016-01-01

In this paper, we studied the structure characteristics of quantum dots-quantum well photodetector with response wavelength range from 400 nm to 1000 nm. It has the characteristics of high sensitivity, low dark current and the high conductance gain. According to the properties of the quantum dots-quantum well photodetectors, we designed a new type of capacitive transimpedence amplifier (CTIA) readout circuit structure with the advantages of adjustable gain, wide bandwidth and high driving ability. We have implemented the chip packaging between CTIA-CDS structure readout circuit and quantum dots detector and tested the readout response characteristics. According to the timing signals requirements of our readout circuit, we designed a real-time spectral data acquisition system based on FPGA and ARM. Parallel processing mode of programmable devices makes the system has high sensitivity and high transmission rate. In addition, we realized blind pixel compensation and smoothing filter algorithm processing to the real time spectrum data by using C++. Through the fluorescence spectrum measurement of carbon quantum dots and the signal acquisition system and computer software system to realize the collection of the spectrum signal processing and analysis, we verified the excellent characteristics of detector. It meets the design requirements of quantum dot spectrum acquisition system with the characteristics of short integration time, real-time and portability.

Image sensor with high dynamic range linear output

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Fossum, Eric R. (Inventor)

2007-01-01

Designs and operational methods to increase the dynamic range of image sensors and APS devices in particular by achieving more than one integration times for each pixel thereof. An APS system with more than one column-parallel signal chains for readout are described for maintaining a high frame rate in readout. Each active pixel is sampled for multiple times during a single frame readout, thus resulting in multiple integration times. The operation methods can also be used to obtain multiple integration times for each pixel with an APS design having a single column-parallel signal chain for readout. Furthermore, analog-to-digital conversion of high speed and high resolution can be implemented.

MuTRiG: a mixed signal Silicon Photomultiplier readout ASIC with high timing resolution and gigabit data link

NASA Astrophysics Data System (ADS)

Chen, H.; Briggl, K.; Eckert, P.; Harion, T.; Munwes, Y.; Shen, W.; Stankova, V.; Schultz-Coulon, H. C.

2017-01-01

MuTRiG is a mixed signal Silicon Photomultiplier readout ASIC designed in UMC 180 nm CMOS technology for precise timing and high event rate applications in high energy physics experiments and medical imaging. It is dedicated to the readout of the scintillating fiber detector and the scintillating tile detector of the Mu3e experiment. The MuTRiG chip extends the excellent timing performance of the STiCv3 chip with a fast digital readout for high rate applications. The high timing performance of the fully differential SiPM readout channels and 50 ps time binning TDCs are complemented by an upgraded digital readout logic and a 1.28 Gbps LVDS serial data link. The design of the chip and the characterization results of the analog front-end, TDC and the LVDS data link are presented.

Frequency-domain cascading microwave superconducting quantum interference device multiplexers; beyond limitations originating from room-temperature electronics

NASA Astrophysics Data System (ADS)

Kohjiro, Satoshi; Hirayama, Fuminori

2018-07-01

A novel approach, frequency-domain cascading microwave multiplexers (MW-Mux), has been proposed and its basic operation has been demonstrated to increase the number of pixels multiplexed in a readout line U of MW-Mux for superconducting detector arrays. This method is an alternative to the challenging development of wideband, large power, and spurious-free room-temperature (300 K) electronics. The readout system for U pixels consists of four main parts: (1) multiplexer chips connected in series those contain U superconducting resonators in total. (2) A cryogenic high-electron-mobility transistor amplifier (HEMT). (3) A 300 K microwave frequency comb generator based on N(≡U/M) parallel units of digital-to-analog converters (DAC). (4) N parallel units of 300 K analog-to-digital converters (ADC). Here, M is the number of tones each DAC produces and each ADC handles. The output signal of U detectors multiplexed at the cryogenic stage is transmitted through a cable to the room temperature and divided into N processors where each handles M pixels. Due to the reduction factor of 1/N, U is not anymore dominated by the 300 K electronics but can be increased up to the potential value determined by either the bandwidth or the spurious-free power of the HEMT. Based on experimental results on the prototype system with N = 2 and M = 3, neither excess inter-pixel crosstalk nor excess noise has been observed in comparison with conventional MW-Mux. This indicates that the frequency-domain cascading MW-Mux provides the full (100%) usage of the HEMT band by assigning N 300 K bands on the frequency axis without inter-band gaps.

Asic developments for radiation imaging applications: The medipix and timepix family

NASA Astrophysics Data System (ADS)

Ballabriga, Rafael; Campbell, Michael; Llopart, Xavier

2018-01-01

Hybrid pixel detectors were developed to meet the requirements for tracking in the inner layers at the LHC experiments. With low input capacitance per channel (10-100 fF) it is relatively straightforward to design pulse processing readout electronics with input referred noise of ∼ 100 e-rms and pulse shaping times consistent with tagging of events to a single LHC bunch crossing providing clean 'images' of the ionising tracks generated. In the Medipix Collaborations the same concept has been adapted to provide practically noise hit free imaging in a wide range of applications. This paper reports on the development of three generations of readout ASICs. Two distinctive streams of development can be identified: the Medipix ASICs which integrate data from multiple hits on a pixel and provide the images in the form of frames and the Timepix ASICs who aim to send as much information about individual interactions as possible off-chip for further processing. One outstanding circumstance in the use of these devices has been their numerous successful applications, thanks to a large and active community of developers and users. That process has even permitted new developments for detectors for High Energy Physics. This paper reviews the ASICs themselves and details some of the many applications.

Latest generation of ASICs for photodetector readout

NASA Astrophysics Data System (ADS)

Seguin-Moreau, N.

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the "ROC" family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the "ROC" chips.

Towards high-resolution neutron imaging on IMAT

NASA Astrophysics Data System (ADS)

Minniti, T.; Tremsin, A. S.; Vitucci, G.; Kockelmann, W.

2018-01-01

IMAT is a new cold-neutron imaging facility at the neutron spallation source ISIS at the Rutherford Appleton Laboratory, U.K.. The ISIS pulsed source enables energy-selective and energy-resolved neutron imaging via time-of-flight (TOF) techniques, which are available in addition to the white-beam neutron radiography and tomography options. A spatial resolution of about 50 μm for white-beam neutron radiography was achieved early in the IMAT commissioning phase. In this work we have made the first steps towards achieving higher spatial resolution. A white-beam radiography with 18 μm spatial resolution was achieved in this experiment. This result was possible by using the event counting neutron pixel detector based on micro-channel plates (MCP) coupled with a Timepix readout chip with 55 μm sized pixels, and by employing an event centroiding technique. The prospects for energy-selective neutron radiography for this centroiding mode are discussed.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

NASA Astrophysics Data System (ADS)

Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

2016-05-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

A front end readout electronics ASIC chip for position sensitive solid state detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kravis, S.D.; Tuemer, T.O.; Visser, G.J.

1998-12-31

A mixed signal Application Specific Integrated Circuit (ASIC) chip for front end readout electronics of position sensitive solid state detectors has been manufactured. It is called RENA (Readout Electronics for Nuclear Applications). This chip can be used for both medical and industrial imaging of X-rays and gamma rays. The RENA chip is a monolithic integrated circuit and has 32 channels with low noise high input impedance charge sensitive amplifiers. It works in pulse counting mode with good energy resolution. It also has a self triggering output which is essential for nuclear applications when the incident radiation arrives at random. Different,more » externally selectable, operational modes that includes a sparse readout mode is available to increase data throughput. It also has externally selectable shaping (peaking) times.« less

NbN A/D Conversion of IR Focal Plane Sensor Signal at 10 K

NASA Technical Reports Server (NTRS)

Eaton, L.; Durand, D.; Sandell, R.; Spargo, J.; Krabach, T.

1994-01-01

We are implementing a 12 bit SFQ counting ADC with parallel-to-serial readout using our established 10 K NbN capability. This circuit provides a key element of the analog signal processor (ASP) used in large infrared focal plane arrays. The circuit processes the signal data stream from a Si:As BIB detector array. A 10 mega samples per second (MSPS) pixel data stream flows from the chip at a 120 megabit bit rate in a format that is compatible with other superconductive time dependent processor (TDP) circuits being developed. We will discuss our planned ASP demonstration, the circuit design, and test results.

Detector Arrays for the James Webb Space Telescope Near-Infrared Spectrograph

NASA Technical Reports Server (NTRS)

Rauscher, Bernard J.; Alexander, David; Brambora, Clifford K.; Derro, Rebecca; Engler, Chuck; Fox, Ori; Garrison, Matthew B.; Henegar, Greg; Hill, robert J.; Johnson, Thomas;

Demonstration of a scalable frequency-domain readout of metallic magnetic calorimeters by means of a microwave SQUID multiplexer

NASA Astrophysics Data System (ADS)

Kempf, Sebastian; Wegner, Mathias; Fleischmann, Andreas; Gastaldo, Loredana; Herrmann, Felix; Papst, Maximilian; Richter, Daniel; Enss, Christian

2017-01-01

We report on the first demonstration of a scalable GHz frequency-domain readout of metallic magnetic calorimeters (MMCs) using a 64 pixel detector array that is read out by an integrated, on-chip microwave SQUID multiplexer. The detector array is optimized for detecting soft X-ray photons and the multiplexer is designed to provide a signal rise time τrise<400 ns and an intrinsic energy sensitivity ɛ <30 h . This results in an expected energy resolution Δ EFWHM <10 eV . We measured a signal rise time τrise as low as 90 ns and an energy resolution Δ EFWHM as low as 50 eV for 5.9 keV photons. The rise time is about an order of magnitude faster compared to other multiplexed low-temperature microcalorimeters and close to the intrinsic value set by the coupling between electron and spins. The energy resolution is degraded with respect to our design value due to a rather low intrinsic quality factor of the microwave resonators that is caused by the quality of the Josephson junction of the associated rf-SQUID as well as an elevated chip temperature as compared to the heat bath. Though the achieved energy resolution is not yet compatible with state-of-the-art single-channel MMCs, this demonstration of a scalable readout approach for MMCs in combination with the full understanding of the device performance showing ways how to improve represents an important milestone for the development of future large-scale MMC detector arrays.

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

NASA Astrophysics Data System (ADS)

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

2018-02-01

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1-MeV- neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

LAMBDA 2M GaAs—A multi-megapixel hard X-ray detector for synchrotrons

NASA Astrophysics Data System (ADS)

Pennicard, D.; Smoljanin, S.; Pithan, F.; Sarajlic, M.; Rothkirch, A.; Yu, Y.; Liermann, H. P.; Morgenroth, W.; Winkler, B.; Jenei, Z.; Stawitz, H.; Becker, J.; Graafsma, H.

2018-01-01

Synchrotrons can provide very intense and focused X-ray beams, which can be used to study the structure of matter down to the atomic scale. In many experiments, the quality of the results depends strongly on detector performance; in particular, experiments studying dynamics of samples require fast, sensitive X-ray detectors. "LAMBDA" is a photon-counting hybrid pixel detector system for experiments at synchrotrons, based on the Medipix3 readout chip. Its main features are a combination of comparatively small pixel size (55 μm), high readout speed at up to 2000 frames per second with no time gap between images, a large tileable module design, and compatibility with high-Z sensors for efficient detection of higher X-ray energies. A large LAMBDA system for hard X-ray detection has been built using Cr-compensated GaAs as a sensor material. The system is composed of 6 GaAs tiles, each of 768 by 512 pixels, giving a system with approximately 2 megapixels and an area of 8.5 by 8.5 cm2. While the sensor uniformity of GaAs is not as high as that of silicon, its behaviour is stable over time, and it is possible to correct nonuniformities effectively by postprocessing of images. By using multiple 10 Gigabit Ethernet data links, the system can be read out at the full speed of 2000 frames per second. The system has been used in hard X-ray diffraction experiments studying the structure of samples under extreme pressure in diamond anvil cells. These experiments can provide insight into geological processes. Thanks to the combination of high speed readout, large area and high sensitivity to hard X-rays, it is possible to obtain previously unattainable information in these experiments about atomic-scale structure on a millisecond timescale during rapid changes of pressure or temperature.

Fully 3D-Integrated Pixel Detectors for X-Rays

DOE PAGES

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; ...

2016-01-01

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout †

PubMed Central

Ni, Yang

2018-01-01

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout. PMID:29443903

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout.

PubMed

Ni, Yang

2018-02-14

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout.

Development of CMOS pixel sensors for the upgrade of the ALICE Inner Tracking System

NASA Astrophysics Data System (ADS)

Molnar, L.

2014-12-01

The ALICE Collaboration is preparing a major upgrade of the current detector, planned for installation during the second long LHC shutdown in the years 2018-19, in order to enhance its low-momentum vertexing and tracking capability, and exploit the planned increase of the LHC luminosity with Pb beams. One of the cornerstones of the ALICE upgrade strategy is to replace the current Inner Tracking System in its entirety with a new, high resolution, low-material ITS detector. The new ITS will consist of seven concentric layers equipped with Monolithic Active Pixel Sensors (MAPS) implemented using the 0.18 μm CMOS technology of TowerJazz. In this contribution, the main key features of the ITS upgrade will be illustrated with emphasis on the functionality of the pixel chip. The ongoing developments on the readout architectures, which have been implemented in several fabricated prototypes, will be discussed. The operational features of these prototypes as well as the results of the characterisation tests before and after irradiation will also be presented.

A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter.

PubMed

Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

2016-03-03

This paper presents the first low noise complementary metal oxide semiconductor (CMOS) deletedCMOS terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31 × 31 focal plane array has been fully integrated in a 0 . 13 μ m standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0 . 2 μ V RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0 . 6 nW at 270 GHz and 0 . 8 nW at 600 GHz.

A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter

PubMed Central

Boukhayma, Assim; Dupret, Antoine; Rostaing, Jean-Pierre; Enz, Christian

2016-01-01

This paper presents the first low noise complementary metal oxide semiconductor (CMOS) terahertz (THz) imager based on source modulation and in-pixel high-Q filtering. The 31×31 focal plane array has been fully integrated in a 0.13μm standard CMOS process. The sensitivity has been improved significantly by modulating the active THz source that lights the scene and performing on-chip high-Q filtering. Each pixel encompass a broadband bow tie antenna coupled to an N-type metal-oxide-semiconductor (NMOS) detector that shifts the THz radiation, a low noise adjustable gain amplifier and a high-Q filter centered at the modulation frequency. The filter is based on a passive switched-capacitor (SC) N-path filter combined with a continuous-time broad-band Gm-C filter. A simplified analysis that helps in designing and tuning the passive SC N-path filter is provided. The characterization of the readout chain shows that a Q factor of 100 has been achieved for the filter with a good matching between the analytical calculation and the measurement results. An input-referred noise of 0.2μV RMS has been measured. Characterization of the chip with different THz wavelengths confirms the broadband feature of the antenna and shows that this THz imager reaches a total noise equivalent power of 0.6 nW at 270 GHz and 0.8 nW at 600 GHz. PMID:26950131

First images of a digital autoradiography system based on a Medipix2 hybrid silicon pixel detector.

PubMed

Mettivier, Giovanni; Montesi, Maria Cristina; Russo, Paolo

2003-06-21

We present the first images of beta autoradiography obtained with the high-resolution hybrid pixel detector consisting of the Medipix2 single photon counting read-out chip bump-bonded to a 300 microm thick silicon pixel detector. This room temperature system has 256 x 256 square pixels of 55 microm pitch (total sensitive area of 14 x 14 mm2), with a double threshold discriminator and a 13-bit counter in each pixel. It is read out via a dedicated electronic interface and control software, also developed in the framework of the European Medipix2 Collaboration. Digital beta autoradiograms of 14C microscale standard strips (containing separate bands of increasing specific activity in the range 0.0038-32.9 kBq g(-1)) indicate system linearity down to a total background noise of 1.8 x 10(-3) counts mm(-2) s(-1). The minimum detectable activity is estimated to be 0.012 Bq for 36,000 s exposure and 0.023 Bq for 10,800 s exposure. The measured minimum detection threshold is less than 1600 electrons (equivalent to about 6 keV Si). This real-time system for beta autoradiography offers lower pixel pitch and higher sensitive area than the previous Medipix1-based system. It has a 14C sensitivity better than that of micro channel plate based systems, which, however, shows higher spatial resolution and sensitive area.

Flight Qualified Micro Sun Sensor

NASA Technical Reports Server (NTRS)

Liebe, Carl Christian; Mobasser, Sohrab; Wrigley, Chris; Schroeder, Jeffrey; Bae, Youngsam; Naegle, James; Katanyoutanant, Sunant; Jerebets, Sergei; Schatzel, Donald; Lee, Choonsup

2007-01-01

A prototype small, lightweight micro Sun sensor (MSS) has been flight qualified as part of the attitude-determination system of a spacecraft or for Mars surface operations. The MSS has previously been reported at a very early stage of development in NASA Tech Briefs, Vol. 28, No. 1 (January 2004). An MSS is essentially a miniature multiple-pinhole electronic camera combined with digital processing electronics that functions analogously to a sundial. A micromachined mask containing a number of microscopic pinholes is mounted in front of an active-pixel sensor (APS). Electronic circuits for controlling the operation of the APS, readout from the pixel photodetectors, and analog-to-digital conversion are all integrated onto the same chip along with the APS. The digital processing includes computation of the centroids of the pinhole Sun images on the APS. The spacecraft computer has the task of converting the Sun centroids into Sun angles utilizing a calibration polynomial. The micromachined mask comprises a 500-micron-thick silicon wafer, onto which is deposited a 57-nm-thick chromium adhesion- promotion layer followed by a 200-nm-thick gold light-absorption layer. The pinholes, 50 microns in diameter, are formed in the gold layer by photolithography. The chromium layer is thin enough to be penetrable by an amount of Sunlight adequate to form measurable pinhole images. A spacer frame between the mask and the APS maintains a gap of .1 mm between the pinhole plane and the photodetector plane of the APS. To minimize data volume, mass, and power consumption, the digital processing of the APS readouts takes place in a single field-programmable gate array (FPGA). The particular FPGA is a radiation- tolerant unit that contains .32,000 gates. No external memory is used so the FPGA calculates the centroids in real time as pixels are read off the APS with minimal internal memory. To enable the MSS to fit into a small package, the APS, the FPGA, and other components are mounted on a single two-sided board following chip-on-board design practices

Operation and performance of new NIR detectors from SELEX

NASA Astrophysics Data System (ADS)

Atkinson, D.; Bezawada, N.; Hipwood, L. G.; Shorrocks, N.; Milne, H.

2012-07-01

The European Space Agency (ESA) has funded SELEX Galileo, Southampton, UK to develop large format near infrared (NIR) detectors for its future space and ground based programmes. The UKATC has worked in collaboration with SELEX Galileo to test and characterise the new detectors produced during phase-1 of the development. In order to demonstrate the detector material performance, the HgCdTe (MCT) detector diodes (grown on GaAs substrate through MOVPE process in small 320×256, 24μm pixel format) are hybridised to the existing SELEX Galileo SWALLOW CMOS readout chip. The substrate removed and MCT thinned detector arrays were then tested and evaluated at the UKATC following screening tests at SELEX. This paper briefly describes the test setup, the operational aspects of the readout multiplexer and presents the performance parameters of the detector arrays including: conversion gain, detector dark current, read noise, linearity, quantum efficiency and persistence for various detector temperatures between 80K and 140K.

ePix100 camera: Use and applications at LCLS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carini, G. A., E-mail: carini@slac.stanford.edu; Alonso-Mori, R.; Blaj, G.

2016-07-27

The ePix100 x-ray camera is a new system designed and built at SLAC for experiments at the Linac Coherent Light Source (LCLS). The camera is the first member of a family of detectors built around a single hardware and software platform, supporting a variety of front-end chips. With a readout speed of 120 Hz, matching the LCLS repetition rate, a noise lower than 80 e-rms and pixels of 50 µm × 50 µm, this camera offers a viable alternative to fast readout, direct conversion, scientific CCDs in imaging mode. The detector, designed for applications such as X-ray Photon Correlation Spectroscopymore » (XPCS) and wavelength dispersive X-ray Emission Spectroscopy (XES) in the energy range from 2 to 10 keV and above, comprises up to 0.5 Mpixels in a very compact form factor. In this paper, we report the performance of the camera during its first use at LCLS.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

Event-Driven Random-Access-Windowing CCD Imaging System

NASA Technical Reports Server (NTRS)

Monacos, Steve; Portillo, Angel; Ortiz, Gerardo; Alexander, James; Lam, Raymond; Liu, William

2004-01-01

A charge-coupled-device (CCD) based high-speed imaging system, called a realtime, event-driven (RARE) camera, is undergoing development. This camera is capable of readout from multiple subwindows [also known as regions of interest (ROIs)] within the CCD field of view. Both the sizes and the locations of the ROIs can be controlled in real time and can be changed at the camera frame rate. The predecessor of this camera was described in High-Frame-Rate CCD Camera Having Subwindow Capability (NPO- 30564) NASA Tech Briefs, Vol. 26, No. 12 (December 2002), page 26. The architecture of the prior camera requires tight coupling between camera control logic and an external host computer that provides commands for camera operation and processes pixels from the camera. This tight coupling limits the attainable frame rate and functionality of the camera. The design of the present camera loosens this coupling to increase the achievable frame rate and functionality. From a host computer perspective, the readout operation in the prior camera was defined on a per-line basis; in this camera, it is defined on a per-ROI basis. In addition, the camera includes internal timing circuitry. This combination of features enables real-time, event-driven operation for adaptive control of the camera. Hence, this camera is well suited for applications requiring autonomous control of multiple ROIs to track multiple targets moving throughout the CCD field of view. Additionally, by eliminating the need for control intervention by the host computer during the pixel readout, the present design reduces ROI-readout times to attain higher frame rates. This camera (see figure) includes an imager card consisting of a commercial CCD imager and two signal-processor chips. The imager card converts transistor/ transistor-logic (TTL)-level signals from a field programmable gate array (FPGA) controller card. These signals are transmitted to the imager card via a low-voltage differential signaling (LVDS) cable assembly. The FPGA controller card is connected to the host computer via a standard peripheral component interface (PCI).

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

NASA Astrophysics Data System (ADS)

Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

2009-08-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siwak, N. P.; Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740; Fan, X. Z.

2014-10-06

An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We havemore » fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.« less

A fully integrated distance readout ELISA-Chip for point-of-care testing with sample-in-answer-out capability.

PubMed

Liu, Dan; Li, Xingrui; Zhou, Junkai; Liu, Shibo; Tian, Tian; Song, Yanling; Zhu, Zhi; Zhou, Leiji; Ji, Tianhai; Yang, Chaoyong

2017-10-15

Enzyme-linked immunosorbent assay (ELISA) is a popular laboratory technique for detection of disease-specific protein biomarkers with high specificity and sensitivity. However, ELISA requires labor-intensive and time-consuming procedures with skilled operators and spectroscopic instrumentation. Simplification of the procedures and miniaturization of the devices are crucial for ELISA-based point-of-care (POC) testing in resource-limited settings. Here, we present a fully integrated, instrument-free, low-cost and portable POC platform which integrates the process of ELISA and the distance readout into a single microfluidic chip. Based on manipulation using a permanent magnet, the process is initiated by moving magnetic beads with capture antibody through different aqueous phases containing ELISA reagents to form bead/antibody/antigen/antibody sandwich structure, and finally converts the molecular recognition signal into a highly sensitive distance readout for visual quantitative bioanalysis. Without additional equipment and complicated operations, our integrated ELISA-Chip with distance readout allows ultrasensitive quantitation of disease biomarkers within 2h. The ELISA-Chip method also showed high specificity, good precision and great accuracy. Furthermore, the ELISA-Chip system is highly applicable as a sandwich-based platform for the detection of a variety of protein biomarkers. With the advantages of visual analysis, easy operation, high sensitivity, and low cost, the integrated sample-in-answer-out ELISA-Chip with distance readout shows great potential for quantitative POCT in resource-limited settings. Copyright © 2017. Published by Elsevier B.V.

Characterization of the Photon Counting CHASE Jr., Chip Built in a 40-nm CMOS Process With a Charge Sharing Correction Algorithm Using a Collimated X-Ray Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krzyżanowska, A.; Deptuch, G. W.; Maj, P.

This paper presents the detailed characterization of a single photon counting chip, named CHASE Jr., built in a CMOS 40-nm process, operating with synchrotron radiation. The chip utilizes an on-chip implementation of the C8P1 algorithm. The algorithm eliminates the charge sharing related uncertainties, namely, the dependence of the number of registered photons on the discriminator’s threshold, set for monochromatic irradiation, and errors in the assignment of an event to a certain pixel. The article presents a short description of the algorithm as well as the architecture of the CHASE Jr., chip. The analog and digital functionalities, allowing for proper operationmore » of the C8P1 algorithm are described, namely, an offset correction for two discriminators independently, two-stage gain correction, and different operation modes of the digital blocks. The results of tests of the C8P1 operation are presented for the chip bump bonded to a silicon sensor and exposed to the 3.5- μm -wide pencil beam of 8-keV photons of synchrotron radiation. It was studied how sensitive the algorithm performance is to the chip settings, as well as the uniformity of parameters of the analog front-end blocks. Presented results prove that the C8P1 algorithm enables counting all photons hitting the detector in between readout channels and retrieving the actual photon energy.« less

75 FR 82372 - Application(s) for Duty-Free Entry of Scientific Instruments

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-30

..., Argonne LLC, 9700 South Cass Ave., Lemont, IL 60439. Instrument: Pilatus 100K Pixel Detector System... efficiency (no readout noise and direct detection scheme), high dynamic range (20-bits), and fast readout.... Instrument: Pilatus 300K Pixel Detector System. Manufacturer: Dectris Ltd., Switzerland. Intended Use: The...

Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

NASA Astrophysics Data System (ADS)

Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

2015-12-01

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE PAGES

Benoit, M.; Braccini, S.; Casse, G.; ...

2018-02-08

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure

PubMed Central

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go

2017-01-01

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO2 interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e−rms, low dark current density of 56 pA/cm2 at −35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV. PMID:29295523

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; Braccini, S.; Casse, G.

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

PubMed

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2017-12-23

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

Very-large-area CCD image sensors: concept and cost-effective research

NASA Astrophysics Data System (ADS)

Bogaart, E. W.; Peters, I. M.; Kleimann, A. C.; Manoury, E. J. P.; Klaassens, W.; de Laat, W. T. F. M.; Draijer, C.; Frost, R.; Bosiers, J. T.

2009-01-01

A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.

Advancements in DEPMOSFET device developments for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Bombelli, L.; Eckart, R.; Fiorini, C.; Fischer, P.; Hälker, O.; Herrmann, S.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Schaller, G.; Schopper, F.; Soltau, H.; Strüder, L.; Wölfel, S.

2006-06-01

DEPMOSFET based Active Pixel Sensor (APS) matrices are a new detector concept for X-ray imaging spectroscopy missions. They can cope with the challenging requirements of the XEUS Wide Field Imager and combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. From the evaluation of first prototypes, new concepts have been developed to overcome the minor drawbacks and problems encountered for the older devices. The new devices will have a pixel size of 75 μm × 75 μm. Besides 64 × 64 pixel arrays, prototypes with a sizes of 256 × 256 pixels and 128 × 512 pixels and an active area of about 3.6 cm2 will be produced, a milestone on the way towards the fully grown XEUS WFI device. The production of these improved devices is currently on the way. At the same time, the development of the next generation of front-end electronics has been started, which will permit to operate the sensor devices with the readout speed required by XEUS. Here, a summary of the DEPFET capabilities, the concept of the sensors of the next generation and the new front-end electronics will be given. Additionally, prospects of new device developments using the DEPFET as a sensitive element are shown, e.g. so-called RNDR-pixels, which feature repetitive non-destructive readout to lower the readout noise below the 1 e - ENC limit.

A kilo-pixel imaging system for future space based far-infrared observatories using microwave kinetic inductance detectors

NASA Astrophysics Data System (ADS)

Baselmans, J. J. A.; Bueno, J.; Yates, S. J. C.; Yurduseven, O.; Llombart, N.; Karatsu, K.; Baryshev, A. M.; Ferrari, L.; Endo, A.; Thoen, D. J.; de Visser, P. J.; Janssen, R. M. J.; Murugesan, V.; Driessen, E. F. C.; Coiffard, G.; Martin-Pintado, J.; Hargrave, P.; Griffin, M.

2017-05-01

Aims: Future astrophysics and cosmic microwave background space missions operating in the far-infrared to millimetre part of the spectrum will require very large arrays of ultra-sensitive detectors in combination with high multiplexing factors and efficient low-noise and low-power readout systems. We have developed a demonstrator system suitable for such applications. Methods: The system combines a 961 pixel imaging array based upon Microwave Kinetic Inductance Detectors (MKIDs) with a readout system capable of reading out all pixels simultaneously with only one readout cable pair and a single cryogenic amplifier. We evaluate, in a representative environment, the system performance in terms of sensitivity, dynamic range, optical efficiency, cosmic ray rejection, pixel-pixel crosstalk and overall yield at an observation centre frequency of 850 GHz and 20% fractional bandwidth. Results: The overall system has an excellent sensitivity, with an average detector sensitivity < NEPdet> =3×10-19 WHz measured using a thermal calibration source. At a loading power per pixel of 50 fW we demonstrate white, photon noise limited detector noise down to 300 mHz. The dynamic range would allow the detection of 1 Jy bright sources within the field of view without tuning the readout of the detectors. The expected dead time due to cosmic ray interactions, when operated in an L2 or a similar far-Earth orbit, is found to be <4%. Additionally, the achieved pixel yield is 83% and the crosstalk between the pixels is <-30 dB. Conclusions: This demonstrates that MKID technology can provide multiplexing ratios on the order of a 1000 with state-of-the-art single pixel performance, and that the technology is now mature enough to be considered for future space based observatories and experiments.

Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Rosa, Alessandro; /CERN; Boscardin, M.

2012-04-04

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3)more » at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.« less

Progress on the FDM Development at SRON: Toward 160 Pixels

NASA Astrophysics Data System (ADS)

den Hartog, R. H.; Bruijn, M. P.; Clenet, A.; Gottardi, L.; Hijmering, R.; Jackson, B. D.; van der Kuur, J.; van Leeuwen, B. J.; van der Linden, A. J.; van Loon, D.; Nieuwenhuizen, A.; Ridder, M.; van Winden, P.

2014-08-01

SRON is developing the electronic read-out for arrays of transition edge sensors using frequency domain multiplexing in combination with base-band feedback. The astronomical applications of this system are the read-out of soft X-ray micro-calorimeters in a potential instrument on the European X-ray mission-under-study Athena+ and far-IR bolometers for the Safari instrument on the Japanese mission SPICA. In this paper we demonstrate the simultaneous read-out of 38 bolometer pixels at a 12 aW/Hz dark NEP level. The stability of the read-out is assessed over 400 s. time spans. Although some 1/f noise is present, there are several bolometers for which 1/f-free read-out can be demonstrated.

Pixel electronic noise as a function of position in an active matrix flat panel imaging array

NASA Astrophysics Data System (ADS)

Yazdandoost, Mohammad Y.; Wu, Dali; Karim, Karim S.

2010-04-01

We present an analysis of output referred pixel electronic noise as a function of position in the active matrix array for both active and passive pixel architectures. Three different noise sources for Active Pixel Sensor (APS) arrays are considered: readout period noise, reset period noise and leakage current noise of the reset TFT during readout. For the state-of-the-art Passive Pixel Sensor (PPS) array, the readout noise of the TFT switch is considered. Measured noise results are obtained by modeling the array connections with RC ladders on a small in-house fabricated prototype. The results indicate that the pixels in the rows located in the middle part of the array have less random electronic noise at the output of the off-panel charge amplifier compared to the ones in rows at the two edges of the array. These results can help optimize for clearer images as well as help define the region-of-interest with the best signal-to-noise ratio in an active matrix digital flat panel imaging array.

A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging

NASA Astrophysics Data System (ADS)

Shrestha, Sumeet; Kamehama, Hiroki; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2015-08-01

This paper presents a low-noise wide-dynamic-range pixel design for a high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based detector is used for the detection of wide energy range of high energy particles (mainly for X-ray). The sensor has a thin layer of SOI CMOS readout circuitry and a thick layer of high-resistivity detector vertically stacked in a single chip. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. The event detection circuit consisting of a comparator and logic circuits which detect the incidence of high energy particle categorizes the incident photon it into two energy groups using an appropriate energy threshold and generate a two-bit code for an event and energy level. The code for energy level is then used for selection of the gain of the in-pixel amplifier for the detected signal, providing a function of high-dynamic-range signal measurement. The two-bit code for the event and energy level is scanned in the event scanning block and the signals from the hit pixels only are read out. The variable-gain in-pixel amplifier uses a continuous integrator and integration-time control for the variable gain. The proposed design allows the small signal detection and wide dynamic range due to the adaptive gain technique and capability of correlated double sampling (CDS) technique of kTC noise canceling of the charge detector.

Characterization of a 512x512-pixel 8-output full-frame CCD for high-speed imaging

NASA Astrophysics Data System (ADS)

Graeve, Thorsten; Dereniak, Eustace L.

1993-01-01

The characterization of a 512 by 512 pixel, eight-output full frame CCD manufactured by English Electric Valve under part number CCD13 is discussed. This device is a high- resolution Silicon-based array designed for visible imaging applications at readout periods as low as two milliseconds. The characterization of the device includes mean-variance analysis to determine read noise and dynamic range, as well as charge transfer efficiency, MTF, and quantum efficiency measurements. Dark current and non-uniformity issues on a pixel-to-pixel basis and between individual outputs are also examined. The characterization of the device is restricted by hardware limitations to a one MHz pixel rate, corresponding to a 40 ms readout time. However, subsections of the device have been operated at up to an equivalent 100 frames per second. To maximize the frame rate, the CCD is illuminated by a synchronized strobe flash in between frame readouts. The effects of the strobe illumination on the imagery obtained from the device is discussed.

The CHROMA focal plane array: a large-format, low-noise detector optimized for imaging spectroscopy

NASA Astrophysics Data System (ADS)

Demers, Richard T.; Bailey, Robert; Beletic, James W.; Bernd, Steve; Bhargava, Sidharth; Herring, Jason; Kobrin, Paul; Lee, Donald; Pan, Jianmei; Petersen, Anders; Piquette, Eric; Starr, Brian; Yamamoto, Matthew; Zandian, Majid

2013-09-01

The CHROMA (Configurable Hyperspectral Readout for Multiple Applications) is an advanced Focal Plane Array (FPA) designed for visible-infrared imaging spectroscopy. Using Teledyne's latest substrateremoved HgCdTe detector, the CHROMA FPA has very low dark current, low readout noise and high, stable quantum efficiency from the deep blue (390nm) to the cutoff wavelength. CHROMA has a pixel pitch of 30 microns and is available in array formats ranging from 320×480 to 1600×480 pixels. Users generally disperse spectra over the 480 pixel-length columns and image spatially over the n×160 pixellength rows, where n=2, 4, 8, 10. The CHROMA Readout Integrated Circuit (ROIC) has Correlated Double Sampling (CDS) in pixel and generates its own internal bias signals and clocks. This paper presents the measured performance of the CHROMA FPA with 2.5 micron cutoff wavelength including the characterization of noise versus pixel gain, power dissipation and quantum efficiency.

X-ray imaging using amorphous selenium: a photoinduced discharge readout method for digital mammography.

PubMed

Rowlands, J A; Hunter, D M; Araj, N

1991-01-01

A new digital image readout method for electrostatic charge images on photoconductive plates is described. The method can be used to read out images on selenium plates similar to those used in xeromammography. The readout method, called the air-gap photoinduced discharge method (PID), discharges the latent image pixel by pixel and measures the charge. The PID readout method, like electrometer methods, is linear. However, the PID method permits much better resolution than scanning electrometers while maintaining quantum limited performance at high radiation exposure levels. Thus the air-gap PID method appears to be uniquely superior for high-resolution digital imaging tasks such as mammography.

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 μm process with a high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Senyukov, S.; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

2013-12-01

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 1013neq /cm2 was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz 0.18 μm CMOS process for the ALICE ITS upgrade.

Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

NASA Astrophysics Data System (ADS)

Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

2017-07-01

We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

FITPix COMBO—Timepix detector with integrated analog signal spectrometric readout

NASA Astrophysics Data System (ADS)

Holik, M.; Kraus, V.; Georgiev, V.; Granja, C.

2016-02-01

The hybrid semiconductor pixel detector Timepix has proven a powerful tool in radiation detection and imaging. Energy loss and directional sensitivity as well as particle type resolving power are possible by high resolution particle tracking and per-pixel energy and quantum-counting capability. The spectrometric resolving power of the detector can be further enhanced by analyzing the analog signal of the detector common sensor electrode (also called back-side pulse). In this work we present a new compact readout interface, based on the FITPix readout architecture, extended with integrated analog electronics for the detector's common sensor signal. Integrating simultaneous operation of the digital per-pixel information with the common sensor (called also back-side electrode) analog pulse processing circuitry into one device enhances the detector capabilities and opens new applications. Thanks to noise suppression and built-in electromagnetic interference shielding the common hardware platform enables parallel analog signal spectroscopy on the back side pulse signal with full operation and read-out of the pixelated digital part, the noise level is 600 keV and spectrometric resolution around 100 keV for 5.5 MeV alpha particles. Self-triggering is implemented with delay of few tens of ns making use of adjustable low-energy threshold of the particle analog signal amplitude. The digital pixelated full frame can be thus triggered and recorded together with the common sensor analog signal. The waveform, which is sampled with frequency 100 MHz, can be recorded in adjustable time window including time prior to the trigger level. An integrated software tool provides control, on-line display and read-out of both analog and digital channels. Both the pixelated digital record and the analog waveform are synchronized and written out by common time stamp.

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

NASA Astrophysics Data System (ADS)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Noise and spectroscopic performance of DEPMOSFET matrix devices for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Fischer, P.; Hälker, O.; Herrmann, S.; Kohrs, R.; Krüger, H.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Strüder, L.; Trimpl, M.; Wermes, N.; Wölfel, S.

2005-08-01

DEPMOSFET based Active Pixel Sensor (APS) matrix devices, originally developed to cope with the challenging requirements of the XEUS Wide Field Imager, have proven to be a promising new imager concept for a variety of future X-ray imaging and spectroscopy missions like Simbol-X. The devices combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. A production of sensor prototypes with 64 x 64 pixels with a size of 75 μm x 75 μm each has recently been finished at the MPI semiconductor laboratory in Munich. The devices are built for row-wise readout and require dedicated control and signal processing electronics of the CAMEX type, which is integrated together with the sensor onto a readout hybrid. A number of hybrids incorporating the most promising sensor design variants has been built, and their performance has been studied in detail. A spectroscopic resolution of 131 eV has been measured, the readout noise is as low as 3.5 e- ENC. Here, the dependence of readout noise and spectroscopic resolution on the device temperature is presented.

Photodetectors and front-end electronics for the LHCb RICH upgrade

NASA Astrophysics Data System (ADS)

Cassina, L.; LHCb RICH

2017-12-01

The RICH detectors of the LHCb experiment provide identification of hadrons produced in high energy proton-proton collisions in the LHC at CERN over a wide momentum range (2-100 GeV/c). Cherenkov light is collected on photon detector planes sensitive to single photons. The RICH will be upgraded (in 2019) to read out every bunch crossing, at a rate of 40 MHz. The current hybrid photon detectors (HPD) will be replaced with multi-anode photomultiplier tubes (customisations of the Hamamatsu R11265 and the H12699 MaPMTs). These 8×8 pixel devices meet the experimental requirements thanks to their small pixel size, high gain, negligible dark count rate (∼50 Hz/cm2) and moderate cross-talk. The measured performance of several tubes is reported, together with their long-term stability. A new 8-channel front-end chip, named CLARO, has been designed in 0.35 μm CMOS AMS technology for the MaPMT readout. The CLARO chip operates in binary mode and combines low power consumption (∼1 mW/Ch), wide bandwidth (baseline restored in ⩽ 25 ns) and radiation hardness. A 12-bit digital register permits the optimisation of the dynamic range and the threshold level for each channel and provides tools for the on-site calibration. The design choices and the characterization of the electronics are presented.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

NASA Astrophysics Data System (ADS)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

2016-09-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Tailoring the High-Q LC Filter Arrays for Readout of Kilo-Pixel TES Arrays in the SPICA-SAFARI Instrument

NASA Astrophysics Data System (ADS)

Bruijn, M. P.; Gottardi, L.; den Hartog, R. H.; van der Kuur, J.; van der Linden, A. J.; Jackson, B. D.

2014-08-01

Following earlier presentations of arrays of high quality factor (Q 10.000) superconducting resonators in the MHz regime, we report on improvement of the packing density of resonance frequencies to 160 in the 1-3 MHz band. Spread in the spacing of resonances is found to be limited to 1 kHz (1 with the present fabrication procedure. The present packing density of frequencies and chip area approaches the requirements for the SAFARI instrument on the SPICA mission (in preparation). The a-Si:H dielectric layer in the planar S-I-S capacitors shows a presently unexplained apparent negative effective series resistance, depending on operating temperature and applied testing voltage.

Alternative Post-Processing on a CMOS Chip to Fabricate a Planar Microelectrode Array

PubMed Central

López-Huerta, Francisco; Herrera-May, Agustín L.; Estrada-López, Johan J.; Zuñiga-Islas, Carlos; Cervantes-Sanchez, Blanca; Soto, Enrique; Soto-Cruz, Blanca S.

2011-01-01

We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wistar strain rats. This chip is fabricated through a 0.6 μm CMOS standard process and it has 12 pMEA through a 4 × 3 electrodes matrix. The alternative CMOS post-process includes the development of masks to protect the readout circuit and the power supply pads. A wet etching process eliminates the aluminum located on the surface of the p+-type silicon. This silicon is used as transducer for recording the neuronal activity and as interface between the readout circuit and neurons. The readout circuit is composed of an amplifier and tunable bandpass filter, which is placed on a 0.015 mm2 silicon area. The tunable bandpass filter has a bandwidth of 98 kHz and a common mode rejection ratio (CMRR) of 87 dB. These characteristics of the readout circuit are appropriate for neuronal recording applications. PMID:22346681

Alternative post-processing on a CMOS chip to fabricate a planar microelectrode array.

PubMed

López-Huerta, Francisco; Herrera-May, Agustín L; Estrada-López, Johan J; Zuñiga-Islas, Carlos; Cervantes-Sanchez, Blanca; Soto, Enrique; Soto-Cruz, Blanca S

2011-01-01

We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wistar strain rats. This chip is fabricated through a 0.6 μm CMOS standard process and it has 12 pMEA through a 4 × 3 electrodes matrix. The alternative CMOS post-process includes the development of masks to protect the readout circuit and the power supply pads. A wet etching process eliminates the aluminum located on the surface of the p+ -type silicon. This silicon is used as transducer for recording the neuronal activity and as interface between the readout circuit and neurons. The readout circuit is composed of an amplifier and tunable bandpass filter, which is placed on a 0.015 mm2 silicon area. The tunable bandpass filter has a bandwidth of 98 kHz and a common mode rejection ratio (CMRR) of 87 dB. These characteristics of the readout circuit are appropriate for neuronal recording applications.

Status of the NectarCAM camera project

NASA Astrophysics Data System (ADS)

Glicenstein, J.-F.; Barcelo, M.; Barrio, J.-A.; Blanch, O.; Boix, J.; Bolmont, J.; Boutonnet, C.; Brun, P.; Chabanne, E.; Champion, C.; Colonges, S.; Corona, P.; Courty, B.; Delagnes, E.; Delgado, C.; Diaz, C.; Ernenwein, J.-P.; Fegan, S.; Ferreira, O.; Fesquet, M.; Fontaine, G.; Fouque, N.; Henault, F.; Gascón, D.; Giebels, B.; Herranz, D.; Hermel, R.; Hoffmann, D.; Horan, D.; Houles, J.; Jean, P.; Karkar, S.; Knödlseder, J.; Martinez, G.; Lamanna, G.; LeFlour, T.; Lévêque, A.; Lopez-Coto, R.; Louis, F.; Moudden, Y.; Moulin, E.; Nayman, P.; Nunio, F.; Olive, J.-F.; Panazol, J.-L.; Pavy, S.; Petrucci, P.-O.; Punch, M.; Prast, Julie; Ramon, P.; Rateau, S.; Ribó, M.; Rosier-Lees, S.; Sanuy, A.; Sizun, P.; Sieiro, J.; Sulanke, K.-H.; Tavernet, J.-P.; Tejedor, L. A.; Toussenel, F.; Vasileiadis, G.; Voisin, V.; Waegebert, V.; Zurbach, C.

2014-07-01

NectarCAM is a camera designed for the medium-sized telescopes of the Cherenkov Telescope Array (CTA) covering the central energy range 100 GeV to 30 TeV. It has a modular design based on the NECTAr chip, at the heart of which is a GHz sampling Switched Capacitor Array and 12-bit Analog to Digital converter. The camera will be equipped with 265 7-photomultiplier modules, covering a field of view of 7 to 8 degrees. Each module includes the photomultiplier bases, High Voltage supply, pre-amplifier, trigger, readout and Thernet transceiver. Events recorded last between a few nanoseconds and tens of nanoseconds. A flexible trigger scheme allows to read out very long events. NectarCAM can sustain a data rate of 10 kHz. The camera concept, the design and tests of the various subcomponents and results of thermal and electrical prototypes are presented. The design includes the mechanical structure, the cooling of electronics, read-out, clock distribution, slow control, data-acquisition, trigger, monitoring and services. A 133-pixel prototype with full scale mechanics, cooling, data acquisition and slow control will be built at the end of 2014.

JFET front-end circuits integrated in a detector-grade silicon substrate

NASA Astrophysics Data System (ADS)

Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.; Traversi, G.; Dalla Betta, G. F.; Boscardin, M.; Batignani, G.; Giorgi, M.; Bosisio, L.

2003-08-01

This paper presents the design and experimental results relevant to front-end circuits integrated on detector-grade high resistivity silicon. The fabrication technology is made available by the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST), Trento, Italy and allows using a common substrate for different kinds of active devices, such as N-channel JFETs and MOSFETs, and for pixel, microstrip, and PIN detectors. This research activity is being carried out in the framework of a project aiming at the fabrication of a multichannel mixed analog-digital chip for the readout of solid-state detectors integrated in the same substrate. Possible applications are in the field of medical and industrial imaging and space and high energy physics experiments. An all-JFET charge sensitive amplifier, which can use either a resistive or a nonresistive feedback network, has been characterized. The two configurations have been compared to each other, paying particular attention to noise performances, in view of the design of the complete readout channel. Operation capability in harsh radiation environment has been evaluated through exposure to /spl gamma/-rays from a /sup 60/Co source.

CVD diamond pixel detectors for LHC experiments

NASA Astrophysics Data System (ADS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J. C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.; RD42 Collaboration

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

PubMed

Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

2013-08-01

VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μ W from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e - RMS at room temperature.

First results of a highly granulated 3D CdTe detector module for PET

NASA Astrophysics Data System (ADS)

Chmeissani, Mokhtar; Kolstein, Machiel; Macias-Montero, José Gabriel; Puigdengoles, Carles; García, Jorge; Prats, Xavier; Martínez, Ricardo

2018-01-01

We present the performance of a highly granulated 3D detector module for PET, consisting of a stack of pixelated CdTe detectors. Each detector module has 2 cm  ×  2 cm  ×  2 cm of CdTe material, subdivided into 4000 voxels, where each voxel has size 1 mm  ×  1 mm  ×  2 mm and is connected to its own read-out electronics via a BiSn solder ball. Each read-out channel consists of a preamp, a discriminator, a shaper, a peak-and-hold circuit and a 10 bits SAR ADC. The preamp has variable gain where at the maximum gain the ADC resolution is equivalent to 0.7 keV. Each ASIC chip reads 100 CdTe pixel channels and has one TDC to measure the time stamp of the triggered events, with a time resolution of less than 1 ns. With the bias voltage set at  -250 V mm-1 and for 17838 working channels out of a total of 20 000, we have obtained an average energy resolution of 2.2% FWHM for 511 keV photons. For 511 keV photons that have undergone Compton scattering, we measured an energy resolution of 3.2% FWHM. A timing resolution for PET coincidence events of 60 ns FWHM was found.

The 160 TES bolometer read-out using FDM for SAFARI

NASA Astrophysics Data System (ADS)

Hijmering, R. A.; den Hartog, R. H.; van der Linden, A. J.; Ridder, M.; Bruijn, M. P.; van der Kuur, J.; van Leeuwen, B. J.; van Winden, P.; Jackson, B.

2014-07-01

For the read out of the Transition Edge Sensors (TES) bolometer arrays of the SAFARI instrument on the Japanese background-limited far-IR SPICA mission SRON is developing a Frequency Domain Multiplexing (FDM) read-out system. The next step after the successful demonstration of the read out of 38 TES bolometers using FDM was to demonstrate the FDM readout of the required 160 TES bolometers. Of the 160 LC filter and TES bolometer chains 151 have been connected and after cooldown 148 of the resonances could be identified. Although initial operation and locking of the pixels went smoothly the experiment revealed several complications. In this paper we describe the 160 pixel FDM set-up, show the results and discuss the issues faced during operation of the 160 pixel FDM experiment.

Integrated readout electronics for Belle II pixel detector

NASA Astrophysics Data System (ADS)

Blanco, R.; Leys, R.; Perić, I.

2018-03-01

This paper describes the readout components for Belle II that have been designed as integrated circuits. The ICs are connected to DEPFET sensor by bump bonding. Three types of ICs have been developed: SWITCHER for pixel matrix control, DCD for readout and digitizing of sensor signals and DHP for digital data processing. The ICs are radiation tolerant and use several novel features, such as the multiple-input differential amplifiers and the fast and radiation hard high-voltage drivers. SWITCHER and DCD have been developed at University of Heidelberg, Karlsruhe Institute of Technology (KIT) and DHP at Bonn University. The IC-development started in 2009 and was accomplished in 2016 with the submissions of final designs. The final ICs for Belle II pixel detector and the related measurement results will be presented in this contribution.

Advancing the Technology of Monolithic CMOS detectors for their use as X-ray Imaging Spectrometers

NASA Astrophysics Data System (ADS)

Kenter, Almus

The Smithsonian Astrophysical Observatory (SAO) proposes a two year program to further advance the scientific capabilities of monolithic CMOS detectors for use as x-ray imaging spectrometers. This proposal will build upon the progress achieved with funding from a previous APRA proposal that ended in 2013. As part of that previous proposal, x- ray optimized, highly versatile, monolithic CMOS imaging detectors and technology were developed and tested. The performance and capabilities of these devices were then demonstrated, with an emphasis on the performance advantages these devices have over CCDs and other technologies. The developed SAO/SRI-Sarnoff CMOS devices incorporate: Low noise, high sensitivity ("gain") pixels; Highly parallel on-chip signal chains; Standard and very high resistivity (30,000Ohm-cm) Si; Back-Side thinning and passivation. SAO demonstrated the performance benefits of each of these features in these devices. This new proposal high-lights the performance of this previous generation of devices, and segues into new technology and capability. The high sensitivity ( 135uV/e) 6 Transistor (6T) Pinned Photo Diode (PPD) pixels provided a large charge to voltage conversion gain to the detect and resolve even small numbers of photo electrons produced by x-rays. The on-chip, parallel signal chain processed an entire row of pixels in the same time that a CCD requires to processes a single pixel. The resulting high speed operation ( 1000 times faster than CCD) provide temporal resolution while mitigating dark current and allowed room temperature operation. The high resistivity Si provided full (over) depletion for thicker devices which increased QE for higher energy x-rays. In this proposal, SAO will investigate existing NMOS and existing PMOS devices as xray imaging spectrometers. Conventional CMOS imagers are NMOS. NMOS devices collect and measure photo-electrons. In contrast, PMOS devices collect and measure photo-holes. PMOS devices have various attributes that would make them superior for use in X-ray astronomy. In particular, PMOS has: "no" photo-charge recombination; "no" Random Telegraph Signal noise (RTS); and lower read noise. The existing SRI/Sarnoff PMOS devices are small and have been developed for non-intensified night vision applications, however, no x-ray evaluation of a monolithic PMOS device has ever been made. In addition to these PMOS devices, SAO will also evaluate existing NMOS scale-able format devices that can be fabricated in any rectangular size/shape using stitchable reticles. These "Mk by Nk" devices would be ideal for large X-ray focal planes or long grating readouts. The Sarnoff/SRI Mk by Nk format devices have been designed, with foresight, so that they can be fabricated in either PMOS or NMOS by changing a single fabrication reticle and by changing the type of Si substrate. If X-ray performance results are expected, this proposal will lead the way to future fabrication of Mk by Nk PMOS devices that would be ideal for X-ray astronomy missions such as "X-ray Surveyor". SAO will also investigate the interaction of directly deposited Optical Blocking Filters (OBFs) on various back side passivated devices, and their resultant effects on very "soft" x-ray response. The latest CMOS processes and very fast on-chip, and off-chip digital readout signal chains and camera systems will be demonstrated.

A radiation-tolerant electronic readout system for portal imaging

NASA Astrophysics Data System (ADS)

Östling, J.; Brahme, A.; Danielsson, M.; Iacobaeus, C.; Peskov, V.

2004-06-01

A new electronic portal imaging device, EPID, is under development at the Karolinska Institutet and the Royal Institute of Technology. Due to considerable demands on radiation tolerance in the radiotherapy environment, a dedicated electronic readout system has been designed. The most interesting aspect of the readout system is that it allows to read out ˜1000 pixels in parallel, with all electronics placed outside the radiation beam—making the detector more radiation resistant. In this work we are presenting the function of a small prototype (6×100 pixels) of the electronic readout board that has been tested. Tests were made with continuous X-rays (10-60 keV) and with α particles. The results show that, without using an optimised gas mixture and with an early prototype only, the electronic readout system still works very well.

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Beyer, J.-C.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Savic, N.; Taibah, R.

2018-01-01

In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4×1016 1 MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe challenge. Thanks to their low material budget and high charge collection efficiency after irradiation, modules made of thin planar pixel sensors are promising candidates to instrument these layers. To optimise the sensor layout for the decreased pixel cell size of 50×50 μm2, TCAD device simulations are being performed to investigate the charge collection efficiency before and after irradiation. In addition, sensors of 100-150 μm thickness, interconnected to FE-I4 read-out chips featuring the previous generation pixel cell size of 50×250 μm2, are characterised with testbeams at the CERN-SPS and DESY facilities. The performance of sensors with various designs, irradiated up to a fluence of 1×1016 neq./cm2, is compared in terms of charge collection and hit efficiency. A replacement of the two innermost pixel layers is foreseen during the lifetime of HL-LHC . The replacement will require several months of intervention, during which the remaining detector modules cannot be cooled. They are kept at room temperature, thus inducing an annealing. The performance of irradiated modules will be investigated with testbeam campaigns and the method of accelerated annealing at higher temperatures.

Optical and x-ray characterization of two novel CMOS image sensors

NASA Astrophysics Data System (ADS)

Bohndiek, Sarah E.; Arvanitis, Costas D.; Venanzi, Cristian; Royle, Gary J.; Clark, Andy T.; Crooks, Jamie P.; Prydderch, Mark L.; Turchetta, Renato; Blue, Andrew; Speller, Robert D.

2007-02-01

A UK consortium (MI3) has been founded to develop advanced CMOS pixel designs for scientific applications. Vanilla, a 520x520 array of 25μm pixels benefits from flushed reset circuitry for low noise and random pixel access for region of interest (ROI) readout. OPIC, a 64x72 test structure array of 30μm digital pixels has thresholding capabilities for sparse readout at 3,700fps. Characterization is performed with both optical illumination and x-ray exposure via a scintillator. Vanilla exhibits 34+/-3e - read noise, interactive quantum efficiency of 54% at 500nm and can read a 6x6 ROI at 24,395fps. OPIC has 46+/-3e - read noise and a wide dynamic range of 65dB due to high full well capacity. Based on these characterization studies, Vanilla could be utilized in applications where demands include high spectral response and high speed region of interest readout while OPIC could be used for high speed, high dynamic range imaging.

A low-power CMOS readout IC design for bolometer applications

NASA Astrophysics Data System (ADS)

Galioglu, Arman; Abbasi, Shahbaz; Shafique, Atia; Ceylan, Ömer; Yazici, Melik; Kaynak, Mehmet; Durmaz, Emre C.; Arsoy, Elif Gul; Gurbuz, Yasar

2017-02-01

A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (>= 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.

Design and realization of 144 x 7 TDI ROIC with hybrid integrated test structure

NASA Astrophysics Data System (ADS)

Ceylan, Omer; Kayahan, Huseyin; Yazici, Melik; Baran, Muhammet Burak; Gurbuz, Yasar

2012-06-01

Design and realization of a 144x7 silicon readout integrated circuit (ROIC) based on switched capacitor TDI for MCT LWIR scanning type focal plane arrays (FPAs) and its corresponding hybrid integrated test circuits are presented. TDI operation with 7 detectors improves the SNR of the system by a factor of √7, while oversampling rate of 3 improves the spatial resolution of the system. ROIC supports bidirectional scan, 5 adjustable gain settings, bypass operation, automatic gain adjustment in case of mulfunctioning pixels and pixel select/deselect properties. Integration time of the system can be determined by the help of an external clock. Programming of ROIC can be done in parallel or serial mode according to the needs of the system. All properties except pixel select/deselect property can be performed in parallel mode, while pixel select/deselect property can be performed only in serial mode. ROIC can handle up to 3.75V dynamic range with a load of 25pF and output settling time of 80ns. Input referred noise of the ROIC is less than 750 rms electrons, while the power consumption is less than 100mW. To test ROIC in absence of detector array, a process and temperature compensated current reference array, which supplies uniform input current in range of 1-50nA to ROIC, is designed and measured both in room and cryogenic (77ºK) temperatures. Standard deviations of current reference arrays are measured 3.26% for 1nA and 0.99% for 50nA. ROIC and current reference array are fabricated seperately, and then flip-chip bonded for the test of the system. Flip-chip bonded system including ROIC and current reference test array is successfully measured both in room and cryogenic temperatures, and measurement results are presented. The manufacturing technology is 0.35μm, double poly-Si, four metal, 5V CMOS process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jungmann-Smith, J. H., E-mail: jsmith@magnet.fsu.edu; Bergamaschi, A.; Brückner, M.

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 ×more » 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.« less

A 16 x 16-pixel retinal-prosthesis vision chip with in-pixel digital image processing in a frequency domain by use of a pulse-frequency-modulation photosensor

NASA Astrophysics Data System (ADS)

Kagawa, Keiichiro; Furumiya, Tetsuo; Ng, David C.; Uehara, Akihiro; Ohta, Jun; Nunoshita, Masahiro

2004-06-01

We are exploring the application of pulse-frequency-modulation (PFM) photosensor to retinal prosthesis for the blind because behavior of PFM photosensors is similar to retinal ganglion cells, from which visual data are transmitted from the retina toward the brain. We have developed retinal-prosthesis vision chips that reshape the output pulses of the PFM photosensor to biphasic current pulses suitable for electric stimulation of retinal cells. In this paper, we introduce image-processing functions to the pixel circuits. We have designed a 16x16-pixel retinal-prosthesis vision chip with several kinds of in-pixel digital image processing such as edge enhancement, edge detection, and low-pass filtering. This chip is a prototype demonstrator of the retinal prosthesis vision chip applicable to in-vitro experiments. By utilizing the feature of PFM photosensor, we propose a new scheme to implement the above image processing in a frequency domain by digital circuitry. Intensity of incident light is converted to a 1-bit data stream by a PFM photosensor, and then image processing is executed by a 1-bit image processor based on joint and annihilation of pulses. The retinal prosthesis vision chip is composed of four blocks: a pixels array block, a row-parallel stimulation current amplifiers array block, a decoder block, and a base current generators block. All blocks except PFM photosensors and stimulation current amplifiers are embodied as digital circuitry. This fact contributes to robustness against noises and fluctuation of power lines. With our vision chip, we can control photosensitivity and intensity and durations of stimulus biphasic currents, which are necessary for retinal prosthesis vision chip. The designed dynamic range is more than 100 dB. The amplitude of the stimulus current is given by a base current, which is common for all pixels, multiplied by a value in an amplitude memory of pixel. Base currents of the negative and positive pulses are common for the all pixels, and they are set in a linear manner. Otherwise, the value in the amplitude memory of the pixel is presented in an exponential manner to cover the wide range. The stimulus currents are put out column by column by scanning. The pixel size is 240um x 240um. Each pixel has a bonding pad on which stimulus electrode is to be formed. We will show the experimental results of the test chip.

Application of low-noise CID imagers in scientific instrumentation cameras

NASA Astrophysics Data System (ADS)

Carbone, Joseph; Hutton, J.; Arnold, Frank S.; Zarnowski, Jeffrey J.; Vangorden, Steven; Pilon, Michael J.; Wadsworth, Mark V.

1991-07-01

CIDTEC has developed a PC-based instrumentation camera incorporating a preamplifier per row CID imager and a microprocessor/LCA camera controller. The camera takes advantage of CID X-Y addressability to randomly read individual pixels and potentially overlapping pixel subsets in true nondestructive (NDRO) as well as destructive readout modes. Using an oxy- nitride fabricated CID and the NDRO readout technique, pixel full well and noise levels of approximately 1*10(superscript 6) and 40 electrons, respectively, were measured. Data taken from test structures indicates noise levels (which appear to be 1/f limited) can be reduced by a factor of two by eliminating the nitride under the preamplifier gate. Due to software programmability, versatile readout capabilities, wide dynamic range, and extended UV/IR capability, this camera appears to be ideally suited for use in spectroscopy and other scientific applications.

Reducing the Read Noise of HAWAII-2RG Detector Systems with Improved Reference Sampling and Subtraction (IRS2)

NASA Technical Reports Server (NTRS)

Rauscher, Bernard J.; Arendt, Richard G.; Fixsen, D. J.; Lander, Matthew; Lindler, Don; Loose, Markus; Moseley, S. H.; Wilson, Donna V.; Xenophontos, Christos

2012-01-01

IRS2 is a Wiener-optimal approach to using all of the reference information that Teledyne's HAWAII-2RG detector arrays provide. Using a new readout pattern, IRS2 regularly interleaves reference pixels with the normal pixels during readout. This differs from conventional clocking, in which the reference pixels are read out infrequently, and only in a few rows and columns around the outside edges of the detector array. During calibration, the data are processed in Fourier space, which is <;:lose to the noise's eigenspace. Using IRS2, we have reduced the read noise of the James Webb Space Telescope Near Infrared Spectrograph by 15% compared to conventional readout. We are attempting to achieve further gains by calibrating out recently recognized non-stationary noise that appears at the frame rate.

Readout Electronics for the Forward Vertex Detector at PHENIX

NASA Astrophysics Data System (ADS)

Phillips, Michael

2010-11-01

The PHENIX experiment at RHIC at Brookhaven National Laboratory has been providing high quality physics data for over 10 years. The current PHENIX physics program will be significantly enhanced by addition of the Forward Silicon Vertex upgrade detector (FVTX) in the acceptance of existing muon arm detectors. The proposed tracker is planned to be put into operation in 2012. Each arm of the FVTX detector consist of 4 discs of silicon strip sensors combined with FPHX readout chips, designed at FNAL. The full detector consists of over 1 million active mini-strip channels with instantaneous bandwidth topping 3.4 Tb/s. The FPHX chip utilizes data push architecture with 2 serial output streams at 200 MHz. The readout electronics design consists of Read-Out Cards (ROC) located in the vicinity of the detector and Front End Modules (FEM) located in the Counting House. ROC boards combine the data from several chips, synchronizes data streams and send them to FEM over a Fiber Optics Link. The data are buffered in the FEM and then sent to a standard PHENIX DAQ interface upon Level-1 trigger request. We will present the current status of the readout electronics development and testing, including tests with data from production wedges.

Experimental single-chip color HDTV image acquisition system with 8M-pixel CMOS image sensor

NASA Astrophysics Data System (ADS)

Shimamoto, Hiroshi; Yamashita, Takayuki; Funatsu, Ryohei; Mitani, Kohji; Nojiri, Yuji

2006-02-01

We have developed an experimental single-chip color HDTV image acquisition system using 8M-pixel CMOS image sensor. The sensor has 3840 × 2160 effective pixels and is progressively scanned at 60 frames per second. We describe the color filter array and interpolation method to improve image quality with a high-pixel-count single-chip sensor. We also describe an experimental image acquisition system we used to measured spatial frequency characteristics in the horizontal direction. The results indicate good prospects for achieving a high quality single chip HDTV camera that reduces pseudo signals and maintains high spatial frequency characteristics within the frequency band for HDTV.

WFC3/UVIS External CTE Monitor: Single-Chip CTE Measurements

NASA Astrophysics Data System (ADS)

Gosmeyer, C. M.; Baggett, S.

2016-12-01

We present the first results of single-chip measurements of charge transfer efficiency (CTE) in the UVIS channel of the Hubble Space Telescope Wide Field Camera 3 (HST/WFC3). This test was performed in Cycle 20 in two visits. In the first visit a field in the star cluster NGC 6583 was observed. In a second visit, the telescope returned to the field, but rotated by 180 degrees and with a shift in pointing that allowed the same stars to be imaged, near and far from the amplifiers, on the same chip of the two-chip UVIS field of-view. This dataset enables a measurement of CTE loss on each separate chip. The current CTE monitor measures CTE loss as an average of the two chips because it dithers by a chip-height to obtain observations of the same sources near and far from the amplifiers, instead of the more difficult to-schedule 180-degree rotation. We find that CTE loss is worse on Chip 1 than on Chip 2 across all cases for which we had data: short and long exposures and w! ith and without the pixel-based CTE correction. In the best case, for long exposures with the CTE correction applied, the max difference between the two chip's flux losses is 3%/2048 pixels. This case should apply for most science observations where the background is 12 e-/pixel. In the worst case of low-background short exposures, e.g. those without post-flash, the max difference between the two chips is 17% flux loss/2048 pixels. Uncertainties are <0.01% flux loss/2048 pixels. Because of the two chips' different CTE loss rates, we will consider adding this test as part of the routine yearly monitor and creating a chip-specific CTE correction software.

Accounting for Dark Current Accumulated during Readout of Hubble's ACS/WFC Detectors

NASA Astrophysics Data System (ADS)

Ryon, Jenna E.; Grogin, Norman A.; Coe, Dan A.; ACS Team

2018-06-01

We investigate the properties of excess dark current accumulated during the 100-second full-frame readout of the Advanced Camera for Surveys (ACS) Wide Field Channel (WFC) detectors. This excess dark current, called "readout dark", gives rise to ambient background gradients and hot columns in each ACS/WFC image. While readout dark signal is removed from science images during the bias correction step in CALACS, the additional noise from the readout dark is currently not taken into account. We develop a method to estimate the readout dark noise properties in ACS/WFC observations. We update the error (ERR) extensions of superbias images to include the appropriate noise from the ambient readout dark gradient and stable hot columns. In recent data, this amounts to about 5 e-/pixel added variance in the rows farthest from the WFC serial registers, and about 7 to 30 e-/pixel added variance along the stable hot columns. We also flag unstable hot columns in the superbias data quality (DQ) extensions. The new reference file pipeline for ACS/WFC implements these updates to our superbias creation process.

CMOS foveal image sensor chip

NASA Technical Reports Server (NTRS)

Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Bandera, Cesar (Inventor); Xia, Shu (Inventor)

2002-01-01

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

First experimental feasibility study of VIPIC: a custom-made detector for X-ray speckle measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rumaiz, Abdul K.; Siddons, D. Peter; Deptuch, Grzegorz

2016-02-10

The Vertically Integrated Photon Imaging Chip (VIPIC) was custom-designed for X-ray photon correlation spectroscopy, an application in which occupancy per pixel is low but high time resolution is needed. VIPIC operates in a sparsified streaming mode in which each detected photon is immediately read out as a time- and position-stamped event. This event stream can be fed directly to an autocorrelation engine or accumulated to form a conventional image. The detector only delivers non-zero data (sparsified readout), greatly reducing the communications overhead typical of conventional frame-oriented detectors such as charge-coupled devices or conventional hybrid pixel detectors. This feature allowscontinuousacquisition ofmore » data with timescales from microseconds to hours. In this work VIPIC has been used to measure X-ray photon correlation spectroscopy data on polystyrene latex nano-colliodal suspensions in glycerol and on colloidal suspensions of silica spheres in water. Relaxation times of the nano-colloids have been measured for different temperatures. These results demonstrate that VIPIC can operatecontinuouslyin the microsecond time frame, while at the same time probing longer timescales.« less

VIPIC: a custom-made detector for X-ray speckle measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rumaiz, Abdul K.; Siddons, D. Peter; Deptuch, Grzegorz

2016-03-01

The Vertically Integrated Photon Imaging Chip (VIPIC) was custom-designed for X-ray photon correlation spectroscopy, an application in which occupancy per pixel is low but high time resolution is needed. VIPIC operates in a sparsified streaming mode in which each detected photon is immediately read out as a time- and position-stamped event. This event stream can be fed directly to an autocorrelation engine or accumulated to form a conventional image. The detector only delivers non-zero data (sparsified readout), greatly reducing the communications overhead typical of conventional frame-oriented detectors such as charge-coupled devices or conventional hybrid pixel detectors. This feature allows continuousmore » acquisition of data with timescales from microseconds to hours. In this work VIPIC has been used to measure X-ray photon correlation spectroscopy data on polystyrene latex ano-colliodal suspensions in glycerol and on colloidal suspensions of silica spheres in water. Relaxation times of the nano-colloids have been measured for different temperatures. These results demonstrate that VIPIC can operate continuously in the microsecond time frame, while at the same time probing longer timescales.« less

Fully Integrated Linear Single Photon Avalanche Diode (SPAD) Array with Parallel Readout Circuit in a Standard 180 nm CMOS Process

NASA Astrophysics Data System (ADS)

Isaak, S.; Bull, S.; Pitter, M. C.; Harrison, Ian.

2011-05-01

This paper reports on the development of a SPAD device and its subsequent use in an actively quenched single photon counting imaging system, and was fabricated in a UMC 0.18 μm CMOS process. A low-doped p- guard ring (t-well layer) encircling the active area to prevent the premature reverse breakdown. The array is a 16×1 parallel output SPAD array, which comprises of an active quenched SPAD circuit in each pixel with the current value being set by an external resistor RRef = 300 kΩ. The SPAD I-V response, ID was found to slowly increase until VBD was reached at excess bias voltage, Ve = 11.03 V, and then rapidly increase due to avalanche multiplication. Digital circuitry to control the SPAD array and perform the necessary data processing was designed in VHDL and implemented on a FPGA chip. At room temperature, the dark count was found to be approximately 13 KHz for most of the 16 SPAD pixels and the dead time was estimated to be 40 ns.

First experimental feasibility study of VIPIC: a custom-made detector for X-ray speckle measurements

PubMed Central

Rumaiz, Abdul K.; Siddons, D. Peter; Deptuch, Grzegorz; Maj, Piotr; Kuczewski, Anthony J.; Carini, Gabriella A.; Narayanan, Suresh; Dufresne, Eric M.; Sandy, Alec; Bradford, Robert; Fluerasu, Andrei; Sutton, Mark

2016-01-01

The Vertically Integrated Photon Imaging Chip (VIPIC) was custom-designed for X-ray photon correlation spectroscopy, an application in which occupancy per pixel is low but high time resolution is needed. VIPIC operates in a sparsified streaming mode in which each detected photon is immediately read out as a time- and position-stamped event. This event stream can be fed directly to an autocorrelation engine or accumulated to form a conventional image. The detector only delivers non-zero data (sparsified readout), greatly reducing the communications overhead typical of conventional frame-oriented detectors such as charge-coupled devices or conventional hybrid pixel detectors. This feature allows continuous acquisition of data with timescales from microseconds to hours. In this work VIPIC has been used to measure X-ray photon correlation spectroscopy data on polystyrene latex nano-colliodal suspensions in glycerol and on colloidal suspensions of silica spheres in water. Relaxation times of the nano-colloids have been measured for different temperatures. These results demonstrate that VIPIC can operate continuously in the microsecond time frame, while at the same time probing longer timescales. PMID:26917126

Ultrafast photon counting applied to resonant scanning STED microscopy.

PubMed

Wu, Xundong; Toro, Ligia; Stefani, Enrico; Wu, Yong

2015-01-01

To take full advantage of fast resonant scanning in super-resolution stimulated emission depletion (STED) microscopy, we have developed an ultrafast photon counting system based on a multigiga sample per second analogue-to-digital conversion chip that delivers an unprecedented 450 MHz pixel clock (2.2 ns pixel dwell time in each scan). The system achieves a large field of view (∼50 × 50 μm) with fast scanning that reduces photobleaching, and advances the time-gated continuous wave STED technology to the usage of resonant scanning with hardware-based time-gating. The assembled system provides superb signal-to-noise ratio and highly linear quantification of light that result in superior image quality. Also, the system design allows great flexibility in processing photon signals to further improve the dynamic range. In conclusion, we have constructed a frontier photon counting image acquisition system with ultrafast readout rate, excellent counting linearity, and with the capacity of realizing resonant-scanning continuous wave STED microscopy with online time-gated detection. © 2014 The Authors Journal of Microscopy © 2014 Royal Microscopical Society.

MKID digital readout tuning with deep learning

NASA Astrophysics Data System (ADS)

Dodkins, R.; Mahashabde, S.; O'Brien, K.; Thatte, N.; Fruitwala, N.; Walter, A. B.; Meeker, S. R.; Szypryt, P.; Mazin, B. A.

2018-04-01

Microwave Kinetic Inductance Detector (MKID) devices offer inherent spectral resolution, simultaneous read out of thousands of pixels, and photon-limited sensitivity at optical wavelengths. Before taking observations the readout power and frequency of each pixel must be individually tuned, and if the equilibrium state of the pixels change, then the readout must be retuned. This process has previously been performed through manual inspection, and typically takes one hour per 500 resonators (20 h for a ten-kilo-pixel array). We present an algorithm based on a deep convolution neural network (CNN) architecture to determine the optimal bias power for each resonator. The bias point classifications from this CNN model, and those from alternative automated methods, are compared to those from human decisions, and the accuracy of each method is assessed. On a test feed-line dataset, the CNN achieves an accuracy of 90% within 1 dB of the designated optimal value, which is equivalent accuracy to a randomly selected human operator, and superior to the highest scoring alternative automated method by 10%. On a full ten-kilopixel array, the CNN performs the characterization in a matter of minutes - paving the way for future mega-pixel MKID arrays.

Spectral characterisation and noise performance of Vanilla—an active pixel sensor

NASA Astrophysics Data System (ADS)

Blue, Andrew; Bates, R.; Bohndiek, S. E.; Clark, A.; Arvanitis, Costas D.; Greenshaw, T.; Laing, A.; Maneuski, D.; Turchetta, R.; O'Shea, V.

2008-06-01

This work will report on the characterisation of a new active pixel sensor, Vanilla. The Vanilla comprises of 512×512 (25μm 2) pixels. The sensor has a 12 bit digital output for full-frame mode, although it can also be readout in analogue mode, whereby it can also be read in a fully programmable region-of-interest (ROI) mode. In full frame, the sensor can operate at a readout rate of more than 100 frames per second (fps), while in ROI mode, the speed depends on the size, shape and number of ROIs. For example, an ROI of 6×6 pixels can be read at 20,000 fps in analogue mode. Using photon transfer curve (PTC) measurements allowed for the calculation of the read noise, shot noise, full-well capacity and camera gain constant of the sensor. Spectral response measurements detailed the quantum efficiency (QE) of the detector through the UV and visible region. Analysis of the ROI readout mode was also performed. Such measurements suggest that the Vanilla APS (active pixel sensor) will be suitable for a wide range of applications including particle physics and medical imaging.

A new 9T global shutter pixel with CDS technique

NASA Astrophysics Data System (ADS)

Liu, Yang; Ma, Cheng; Zhou, Quan; Wang, Xinyang

2015-04-01

Benefiting from motion blur free, Global shutter pixel is very widely used in the design of CMOS image sensors for high speed applications such as motion vision, scientifically inspection, etc. In global shutter sensors, all pixel signal information needs to be stored in the pixel first and then waiting for readout. For higher frame rate, we need very fast operation of the pixel array. There are basically two ways for the in pixel signal storage, one is in charge domain, such as the one shown in [1], this needs complicated process during the pixel fabrication. The other one is in voltage domain, one example is the one in [2], this pixel is based on the 4T PPD technology and normally the driving of the high capacitive transfer gate limits the speed of the array operation. In this paper we report a new 9T global shutter pixel based on 3-T partially pinned photodiode (PPPD) technology. It incorporates three in-pixel storage capacitors allowing for correlated double sampling (CDS) and pipeline operation of the array (pixel exposure during the readout of the array). Only two control pulses are needed for all the pixels at the end of exposure which allows high speed exposure control.

Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

PubMed

Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

2015-03-01

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

Backside illuminated CMOS-TDI line scanner for space applications

NASA Astrophysics Data System (ADS)

Cohen, O.; Ben-Ari, N.; Nevo, I.; Shiloah, N.; Zohar, G.; Kahanov, E.; Brumer, M.; Gershon, G.; Ofer, O.

2017-09-01

A new multi-spectral line scanner CMOS image sensor is reported. The backside illuminated (BSI) image sensor was designed for continuous scanning Low Earth Orbit (LEO) space applications including A custom high quality CMOS Active Pixels, Time Delayed Integration (TDI) mechanism that increases the SNR, 2-phase exposure mechanism that increases the dynamic Modulation Transfer Function (MTF), very low power internal Analog to Digital Converters (ADC) with resolution of 12 bit per pixel and on chip controller. The sensor has 4 independent arrays of pixels where each array is arranged in 2600 TDI columns with controllable TDI depth from 8 up to 64 TDI levels. A multispectral optical filter with specific spectral response per array is assembled at the package level. In this paper we briefly describe the sensor design and present some electrical and electro-optical recent measurements of the first prototypes including high Quantum Efficiency (QE), high MTF, wide range selectable Full Well Capacity (FWC), excellent linearity of approximately 1.3% in a signal range of 5-85% and approximately 1.75% in a signal range of 2-95% out of the signal span, readout noise of approximately 95 electrons with 64 TDI levels, negligible dark current and power consumption of less than 1.5W total for 4 bands sensor at all operation conditions .

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

NASA Technical Reports Server (NTRS)

Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.;

Musculoskeletal imaging with a prototype photon-counting detector.

PubMed

Gruber, M; Homolka, P; Chmeissani, M; Uffmann, M; Pretterklieber, M; Kainberger, F

2012-01-01

To test a digital imaging X-ray device based on the direct capture of X-ray photons with pixel detectors, which are coupled with photon-counting readout electronics. The chip consists of a matrix of 256 × 256 pixels with a pixel pitch of 55 μm. A monolithic image of 11.2 cm × 7 cm was obtained by the consecutive displacement approach. Images of embalmed anatomical specimens of eight human hands were obtained at four different dose levels (skin dose 2.4, 6, 12, 25 μGy) with the new detector, as well as with a flat-panel detector. The overall rating scores for the evaluated anatomical regions ranged from 5.23 at the lowest dose level, 6.32 at approximately 6 μGy, 6.70 at 12 μGy, to 6.99 at the highest dose level with the photon-counting system. The corresponding rating scores for the flat-panel detector were 3.84, 5.39, 6.64, and 7.34. When images obtained at the same dose were compared, the new system outperformed the conventional DR system at the two lowest dose levels. At the higher dose levels, there were no significant differences between the two systems. The photon-counting detector has great potential to obtain musculoskeletal images of excellent quality at very low dose levels.

Continuous-time ΣΔ ADC with implicit variable gain amplifier for CMOS image sensor.

PubMed

Tang, Fang; Bermak, Amine; Abbes, Amira; Benammar, Mohieddine Amor

2014-01-01

This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.

32 x 16 CMOS smart pixel array for optical interconnects

NASA Astrophysics Data System (ADS)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

640 X 480 MOS PtSi IR sensor

NASA Astrophysics Data System (ADS)

Sauer, Donald J.; Shallcross, Frank V.; Hseuh, Fu-Lung; Meray, Grazyna M.; Levine, Peter A.; Gilmartin, Harvey R.; Villani, Thomas S.; Esposito, Benjamin J.; Tower, John R.

1991-12-01

The design of a 1st and 2nd generation 640(H) X 480(V) element PtSi Schottky-barrier infrared image sensor employing a low-noise MOS X-Y addressable readout multiplexer and on-chip low-noise output amplifier is described. Measured performance characteristics for Gen 1 devices are presented along with calculated performance for the Gen 2 design. A multiplexed horizontal/vertical input address port and on-chip decoding is used to load scan data into CMOS horizontal and vertical scanning registers. This allows random access to any sub-frame in the 640 X 480 element focal plane array. By changing the digital pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or non- interlaced format, and the integration time may be varied over a wide range (60 microsecond(s) to > 30 ms, for RS170 operation) resulting in a form of 'electronic shutter,' or variable exposure control. The pixel size of 24-micrometers X 24-micrometers results in a fill factor of 38% for 1.5-micrometers process design rules. The overall die size for the IR imager is 13.7 mm X 17.2 mm. All digital inputs to the chip are TTL compatible and include ESD protection.

Ultra-fast high-resolution hybrid and monolithic CMOS imagers in multi-frame radiography

NASA Astrophysics Data System (ADS)

Kwiatkowski, Kris; Douence, Vincent; Bai, Yibin; Nedrow, Paul; Mariam, Fesseha; Merrill, Frank; Morris, Christopher L.; Saunders, Andy

2014-09-01

A new burst-mode, 10-frame, hybrid Si-sensor/CMOS-ROIC FPA chip has been recently fabricated at Teledyne Imaging Sensors. The intended primary use of the sensor is in the multi-frame 800 MeV proton radiography at LANL. The basic part of the hybrid is a large (48×49 mm2) stitched CMOS chip of 1100×1100 pixel count, with a minimum shutter speed of 50 ns. The performance parameters of this chip are compared to the first generation 3-frame 0.5-Mpixel custom hybrid imager. The 3-frame cameras have been in continuous use for many years, in a variety of static and dynamic experiments at LANSCE. The cameras can operate with a per-frame adjustable integration time of ~ 120ns-to- 1s, and inter-frame time of 250ns to 2s. Given the 80 ms total readout time, the original and the new imagers can be externally synchronized to 0.1-to-5 Hz, 50-ns wide proton beam pulses, and record up to ~1000-frame radiographic movies typ. of 3-to-30 minute duration. The performance of the global electronic shutter is discussed and compared to that of a high-resolution commercial front-illuminated monolithic CMOS imager.

Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.;

CMOS Image Sensors: Electronic Camera On A Chip

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

Advances in detector technologies for visible and infrared wavefront sensing

NASA Astrophysics Data System (ADS)

Feautrier, Philippe; Gach, Jean-Luc; Downing, Mark; Jorden, Paul; Kolb, Johann; Rothman, Johan; Fusco, Thierry; Balard, Philippe; Stadler, Eric; Guillaume, Christian; Boutolleau, David; Destefanis, Gérard; Lhermet, Nicolas; Pacaud, Olivier; Vuillermet, Michel; Kerlain, Alexandre; Hubin, Norbert; Reyes, Javier; Kasper, Markus; Ivert, Olaf; Suske, Wolfgang; Walker, Andrew; Skegg, Michael; Derelle, Sophie; Deschamps, Joel; Robert, Clélia; Vedrenne, Nicolas; Chazalet, Frédéric; Tanchon, Julien; Trollier, Thierry; Ravex, Alain; Zins, Gérard; Kern, Pierre; Moulin, Thibaut; Preis, Olivier

2012-07-01

The purpose of this paper is to give an overview of the state of the art wavefront sensor detectors developments held in Europe for the last decade. The success of the next generation of instruments for 8 to 40-m class telescopes will depend on the ability of Adaptive Optics (AO) systems to provide excellent image quality and stability. This will be achieved by increasing the sampling, wavelength range and correction quality of the wave front error in both spatial and time domains. The modern generation of AO wavefront sensor detectors development started in the late nineties with the CCD50 detector fabricated by e2v technologies under ESO contract for the ESO NACO AO system. With a 128x128 pixels format, this 8 outputs CCD offered a 500 Hz frame rate with a readout noise of 7e-. A major breakthrough has been achieved with the recent development by e2v technologies of the CCD220. This 240x240 pixels 8 outputs EMCCD (CCD with internal multiplication) has been jointly funded by ESO and Europe under the FP6 programme. The CCD220 and the OCAM2 camera that operates the detector are now the most sensitive system in the world for advanced adaptive optics systems, offering less than 0.2 e readout noise at a frame rate of 1500 Hz with negligible dark current. Extremely easy to operate, OCAM2 only needs a 24 V power supply and a modest water cooling circuit. This system, commercialized by First Light Imaging, is extensively described in this paper. An upgrade of OCAM2 is foreseen to boost its frame rate to 2 kHz, opening the window of XAO wavefront sensing for the ELT using 4 synchronized cameras and pyramid wavefront sensing. Since this major success, new developments started in Europe. One is fully dedicated to Natural and Laser Guide Star AO for the E-ELT with ESO involvement. The spot elongation from a LGS Shack Hartman wavefront sensor necessitates an increase of the pixel format. Two detectors are currently developed by e2v. The NGSD will be a 880x840 pixels CMOS detector with a readout noise of 3 e (goal 1e) at 700 Hz frame rate. The LGSD is a scaling of the NGSD with 1760x1680 pixels and 3 e readout noise (goal 1e) at 700 Hz (goal 1000 Hz) frame rate. New technologies will be developed for that purpose: advanced CMOS pixel architecture, CMOS back thinned and back illuminated device for very high QE, full digital outputs with signal digital conversion on chip. In addition, the CMOS technology is extremely robust in a telescope environment. Both detectors will be used on the European ELT but also interest potentially all giant telescopes under development. Additional developments also started for wavefront sensing in the infrared based on a new technological breakthrough using ultra low noise Avalanche Photodiode (APD) arrays within the RAPID project. Developed by the SOFRADIR and CEA/LETI manufacturers, the latter will offer a 320x240 8 outputs 30 microns IR array, sensitive from 0.4 to 3.2 microns, with 2 e readout noise at 1500 Hz frame rate. The high QE response is almost flat over this wavelength range. Advanced packaging with miniature cryostat using liquid nitrogen free pulse tube cryocoolers is currently developed for this programme in order to allow use on this detector in any type of environment. First results of this project are detailed here. These programs are held with several partners, among them are the French astronomical laboratories (LAM, OHP, IPAG), the detector manufacturers (e2v technologies, Sofradir, CEA/LETI) and other partners (ESO, ONERA, IAC, GTC). Funding is: Opticon FP6 and FP7 from European Commission, ESO, CNRS and Université de Provence, Sofradir, ONERA, CEA/LETI and the French FUI (DGCIS).

A Stimulated Raman Scattering CMOS Pixel Using a High-Speed Charge Modulator and Lock-in Amplifier.

PubMed

Lioe, De Xing; Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

2016-04-13

A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is very small and needs to be extracted from an extremely large offset due to a probing laser signal. In order to suppress the offset components while amplifying high-frequency modulated small SRS signal components, the lock-in pixel uses a high-speed LEFM for demodulating the SRS signal, resistor-capacitor low-pass filter (RC-LPF) and switched-capacitor (SC) integrator with a fully CMOS differential amplifier. AC (modulated) components remained in the RC-LPF outputs are eliminated by the phase-adjusted sampling with the SC integrator and the demodulated DC (unmodulated) components due to the SRS signal are integrated over many samples in the SC integrator. In order to suppress further the residual offset and the low frequency noise (1/f noise) components, a double modulation technique is introduced in the SRS signal measurements, where the phase of high-frequency modulated laser beam before irradiation of a specimen is modulated at an intermediate frequency and the demodulation is done at the lock-in pixel output. A prototype chip for characterizing the SRS lock-in pixel is implemented and a successful operation is demonstrated. The reduction effects of residual offset and 1/f noise components are confirmed by the measurements. A ratio of the detected small SRS to offset a signal of less than 10(-)⁵ is experimentally demonstrated, and the SRS spectrum of a Benzonitrile sample is successfully observed.

Implementation of the Timepix ASIC in the Scalable Readout System

NASA Astrophysics Data System (ADS)

Lupberger, M.; Desch, K.; Kaminski, J.

2016-09-01

We report on the development of electronics hardware, FPGA firmware and software to provide a flexible multi-chip readout of the Timepix ASIC within the framework of the Scalable Readout System (SRS). The system features FPGA-based zero-suppression and the possibility to read out up to 4×8 chips with a single Front End Concentrator (FEC). By operating several FECs in parallel, in principle an arbitrary number of chips can be read out, exploiting the scaling features of SRS. Specifically, we tested the system with a setup consisting of 160 Timepix ASICs, operated as GridPix devices in a large TPC field cage in a 1 T magnetic field at a DESY test beam facility providing an electron beam of up to 6 GeV. We discuss the design choices, the dedicated hardware components, the FPGA firmware as well as the performance of the system in the test beam.

Solution-based circuits enable rapid and multiplexed pathogen detection.

PubMed

Lam, Brian; Das, Jagotamoy; Holmes, Richard D; Live, Ludovic; Sage, Andrew; Sargent, Edward H; Kelley, Shana O

2013-01-01

Electronic readout of markers of disease provides compelling simplicity, sensitivity and specificity in the detection of small panels of biomarkers in clinical samples; however, the most important emerging tests for disease, such as infectious disease speciation and antibiotic-resistance profiling, will need to interrogate samples for many dozens of biomarkers. Electronic readout of large panels of markers has been hampered by the difficulty of addressing large arrays of electrode-based sensors on inexpensive platforms. Here we report a new concept--solution-based circuits formed on chip--that makes highly multiplexed electrochemical sensing feasible on passive chips. The solution-based circuits switch the information-carrying signal readout channels and eliminate all measurable crosstalk from adjacent, biomolecule-specific microsensors. We build chips that feature this advance and prove that they analyse unpurified samples successfully, and accurately classify pathogens at clinically relevant concentrations. We also show that signature molecules can be accurately read 2  minutes after sample introduction.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time

DOE PAGES

Zhang, Qingteng; Dufresne, Eric M.; Grybos, Pawel; ...

2016-04-19

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. Lastly, the potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qingteng; Dufresne, Eric M.; Grybos, Pawel

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. Lastly, the potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time.

PubMed

Zhang, Qingteng; Dufresne, Eric M; Grybos, Pawel; Kmon, Piotr; Maj, Piotr; Narayanan, Suresh; Deptuch, Grzegorz W; Szczygiel, Robert; Sandy, Alec

2016-05-01

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. The potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Low temperature performance of a commercially available InGaAs image sensor

NASA Astrophysics Data System (ADS)

Nakaya, Hidehiko; Komiyama, Yutaka; Kashikawa, Nobunari; Uchida, Tomohisa; Nagayama, Takahiro; Yoshida, Michitoshi

2016-08-01

We report the evaluation results of a commercially available InGaAs image sensor manufactured by Hamamatsu Photonics K. K., which has sensitivity between 0.95μm and 1.7μm at a room temperature. The sensor format was 128×128 pixels with 20 μm pitch. It was tested with our original readout electronics and cooled down to 80 K by a mechanical cooler to minimize the dark current. Although the readout noise and dark current were 200 e- and 20 e- /sec/pixel, respectively, we found no serious problems for the linearity, wavelength response, and intra-pixel response.

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

PubMed Central

Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

2016-01-01

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE PAGES

An, Mangmang; Chen, Chufeng; Gao, Chaosong; ...

2015-12-12

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Mangmang; Chen, Chufeng; Gao, Chaosong

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

Single Pixel Characterization of X-Ray TES Microcalorimeter Under AC Bias at MHz Frequencies

NASA Technical Reports Server (NTRS)

Gottardi, L.; Blandler, S. R.; Porter, F. S.; Sadleir, J. E.; Kilbourne, C. A.; Bailey, C. N.; Finkbeiner, F. M.; Chervenak, J. A.; Adams, J. S.; Eckart, M. E.;

Optically Addressable, Ferroelectric Memory With NDRO

NASA Technical Reports Server (NTRS)

Thakoor, Sarita

1994-01-01

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Improved Space Object Orbit Determination Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

2014-09-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario a sensor in a sun-synchronous LEO orbit, always pointing in the anti-sun direction to achieve optimum illumination conditions for small LEO debris, was simulated. For the space-based scenario the simulations showed a 20 130 % improvement of the accuracy of all orbital parameters when varying the frame rate from 1/3 fps, which is the fastest rate for a typical CCD detector, to 50 fps, which represents the highest rate of scientific CMOS cameras. Changing the epoch registration accuracy from a typical 20.0 ms for a mechanical shutter to 0.025 ms, the theoretical value for the electronic shutter of a CMOS camera, improved the orbit accuracy by 4 to 190 %. The ground-based scenario also benefit from the specific CMOS characteristics, but to a lesser extent.

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD

DOE PAGES

Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; ...

2017-09-26

Here, we have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068 e - rms/pixel. This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime.more » Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.« less

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD

NASA Astrophysics Data System (ADS)

Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

2017-09-01

We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068 e- rms /pixel . This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.

Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD.

PubMed

Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

2017-09-29

We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068  e^{-} rms/pixel. This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.

A digital pixel cell for address event representation image convolution processing

NASA Astrophysics Data System (ADS)

Camunas-Mesa, Luis; Acosta-Jimenez, Antonio; Serrano-Gotarredona, Teresa; Linares-Barranco, Bernabe

2005-06-01

Address Event Representation (AER) is an emergent neuromorphic interchip communication protocol that allows for real-time virtual massive connectivity between huge number of neurons located on different chips. By exploiting high speed digital communication circuits (with nano-seconds timings), synaptic neural connections can be time multiplexed, while neural activity signals (with mili-seconds timings) are sampled at low frequencies. Also, neurons generate events according to their information levels. Neurons with more information (activity, derivative of activities, contrast, motion, edges,...) generate more events per unit time, and access the interchip communication channel more frequently, while neurons with low activity consume less communication bandwidth. AER technology has been used and reported for the implementation of various type of image sensors or retinae: luminance with local agc, contrast retinae, motion retinae,... Also, there has been a proposal for realizing programmable kernel image convolution chips. Such convolution chips would contain an array of pixels that perform weighted addition of events. Once a pixel has added sufficient event contributions to reach a fixed threshold, the pixel fires an event, which is then routed out of the chip for further processing. Such convolution chips have been proposed to be implemented using pulsed current mode mixed analog and digital circuit techniques. In this paper we present a fully digital pixel implementation to perform the weighted additions and fire the events. This way, for a given technology, there is a fully digital implementation reference against which compare the mixed signal implementations. We have designed, implemented and tested a fully digital AER convolution pixel. This pixel will be used to implement a full AER convolution chip for programmable kernel image convolution processing.

CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography.

PubMed

Esposito, M; Anaxagoras, T; Evans, P M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Poludniowski, G; Price, T; Waltham, C; Allinson, N M

2015-06-03

Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

Theory and Development of Position-Sensitive Quantum Calorimeters. Degree awarded by Stanford Univ.

NASA Technical Reports Server (NTRS)

Figueroa-Feliciano, Enectali; White, Nicholas E. (Technical Monitor)

2001-01-01

Quantum calorimeters are being developed as imaging spectrometers for future X-ray astrophysics observatories. Much of the science to be done by these instruments could benefit greatly from larger focal-plane coverage of the detector (without increasing pixel size). An order of magnitude more area will greatly increase the science throughput of these future instruments. One of the main deterrents to achieving this goal is the complexity of the readout schemes involved. We have devised a way to increase the number of pixels from the current baseline designs by an order of magnitude without increasing the number of channels required for readout. The instrument is a high energy resolution, distributed-readout imaging spectrometer called a Position-Sensitive Transition-Edge Sensor (POST). A POST is a quantum calorimeter consisting of two Transition-Edge Sensors (TESS) on the ends of a long absorber capable of one-dimensional imaging spectroscopy. Comparing rise time and energy information from the two TESS, the position of the event in the POST is determined. The energy of the event is inferred from the sum of the two pulses. We have developed a generalized theoretical formalism for distributed-readout calorimeters and apply it to our devices. We derive the noise theory and calculate the theoretical energy resolution of a POST. Our calculations show that a 7-pixel POST with 6 keV saturation energy can achieve 2.3 eV resolution, making this a competitive design for future quantum calorimeter instruments. For this thesis we fabricated 7- and 15-pixel POSTS using Mo/Au TESs and gold absorbers, and moved from concept drawings on scraps of napkins to a 32 eV energy resolution at 1.5 keV, 7-pixel POST calorimeter.

A zirconium dioxide ammonia microsensor integrated with a readout circuit manufactured using the 0.18 μm CMOS process.

PubMed

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-03-15

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.

LSI-based amperometric sensor for bio-imaging and multi-point biosensing.

PubMed

Inoue, Kumi Y; Matsudaira, Masahki; Kubo, Reyushi; Nakano, Masanori; Yoshida, Shinya; Matsuzaki, Sakae; Suda, Atsushi; Kunikata, Ryota; Kimura, Tatsuo; Tsurumi, Ryota; Shioya, Toshihito; Ino, Kosuke; Shiku, Hitoshi; Satoh, Shiro; Esashi, Masayoshi; Matsue, Tomokazu

2012-09-21

We have developed an LSI-based amperometric sensor called "Bio-LSI" with 400 measurement points as a platform for electrochemical bio-imaging and multi-point biosensing. The system is comprised of a 10.4 mm × 10.4 mm CMOS sensor chip with 20 × 20 unit cells, an external circuit box, a control unit for data acquisition, and a DC power box. Each unit cell of the chip contains an operational amplifier with a switched-capacitor type I-V converter for in-pixel signal amplification. We successfully realized a wide dynamic range from ±1 pA to ±100 nA with a well-organized circuit design and operating software. In particular, in-pixel signal amplification and an original program to control the signal read-out contribute to the lower detection limit and wide detection range of Bio-LSI. The spacial resolution is 250 μm and the temporal resolution is 18-125 ms/400 points, which depends on the desired current detection range. The coefficient of variance of the current for 400 points is within 5%. We also demonstrated the real-time imaging of a biological molecule using Bio-LSI. The LSI coated with an Os-HRP film was successfully applied to the monitoring of the changes of hydrogen peroxide concentration in a flow. The Os-HRP-coated LSI was spotted with glucose oxidase and used for bioelectrochemical imaging of the glucose oxidase (GOx)-catalyzed oxidation of glucose. Bio-LSI is a promising platform for a wide range of analytical fields, including diagnostics, environmental measurements and basic biochemistry.

High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip.

PubMed

Issadore, David; Franke, Thomas; Brown, Keith A; Hunt, Thomas P; Westervelt, Robert M

2009-12-01

A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm(2) in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip's surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications.

Report on recent results of the PERCIVAL soft X-ray imager

NASA Astrophysics Data System (ADS)

Khromova, A.; Cautero, G.; Giuressi, D.; Menk, R.; Pinaroli, G.; Stebel, L.; Correa, J.; Marras, A.; Wunderer, C. B.; Lange, S.; Tennert, M.; Niemann, M.; Hirsemann, H.; Smoljanin, S.; Reza, S.; Graafsma, H.; Göttlicher, P.; Shevyakov, I.; Supra, J.; Xia, Q.; Zimmer, M.; Guerrini, N.; Marsh, B.; Sedgwick, I.; Nicholls, T.; Turchetta, R.; Pedersen, U.; Tartoni, N.; Hyun, H. J.; Kim, K. S.; Rah, S. Y.; Hoenk, M. E.; Jewell, A. D.; Jones, T. J.; Nikzad, S.

2016-11-01

The PERCIVAL (Pixelated Energy Resolving CMOS Imager, Versatile And Large) soft X-ray 2D imaging detector is based on stitched, wafer-scale sensors possessing a thick epi-layer, which together with back-thinning and back-side illumination yields elevated quantum efficiency in the photon energy range of 125-1000 eV. Main application fields of PERCIVAL are foreseen in photon science with FELs and synchrotron radiation. This requires high dynamic range up to 105 ph @ 250 eV paired with single photon sensitivity with high confidence at moderate frame rates in the range of 10-120 Hz. These figures imply the availability of dynamic gain switching on a pixel-by-pixel basis and a highly parallel, low noise analog and digital readout, which has been realized in the PERCIVAL sensor layout. Different aspects of the detector performance have been assessed using prototype sensors with different pixel and ADC types. This work will report on the recent test results performed on the newest chip prototypes with the improved pixel and ADC architecture. For the target frame rates in the 10-120 Hz range an average noise floor of 14e- has been determined, indicating the ability of detecting single photons with energies above 250 eV. Owing to the successfully implemented adaptive 3-stage multiple-gain switching, the integrated charge level exceeds 4 · 106 e- or 57000 X-ray photons at 250 eV per frame at 120 Hz. For all gains the noise level remains below the Poisson limit also in high-flux conditions. Additionally, a short overview over the updates on an oncoming 2 Mpixel (P2M) detector system (expected at the end of 2016) will be reported.

The Mammographic Head Demonstrator Developed in the Framework of the “IMI” Project:. First Imaging Tests Results

NASA Astrophysics Data System (ADS)

Bisogni, Maria Giuseppina

2006-04-01

In this paper we report on the performances and the first imaging test results of a digital mammographic demonstrator based on GaAs pixel detectors. The heart of this prototype is the X-ray detection unit, which is a GaAs pixel sensor read-out by the PCC/MEDIPIXI circuit. Since the active area of the sensor is 1 cm2, 18 detectors have been organized in two staggered rows of nine chips each. To cover the typical mammographic format (18 × 24 cm2) a linear scanning is performed by means of a stepper motor. The system is integrated in mammographic equipment comprehending the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies in collaboration with the universities of Ferrara, Roma “La Sapienza”, Pisa and the INFN.

Recent progress and development of a speedster-EXD: a new event-triggered hybrid CMOS x-ray detector

NASA Astrophysics Data System (ADS)

Griffith, Christopher V.; Falcone, Abraham D.; Prieskorn, Zachary R.; Burrows, David N.

2015-08-01

We present the characterization of a new event-driven X-ray hybrid CMOS detector developed by Penn State University in collaboration with Teledyne Imaging Sensors. Along with its low susceptibility to radiation damage, low power consumption, and fast readout time to avoid pile-up, the Speedster-EXD has been designed with the capability to limit its readout to only those pixels containing charge, thus enabling even faster effective frame rates. The threshold for the comparator in each pixel can be set by the user so that only pixels with signal above the set threshold are read out. The Speedster-EXD hybrid CMOS detector also has two new in-pixel features that reduce noise from known noise sources: (1) a low-noise, high-gain CTIA amplifier to eliminate crosstalk from interpixel capacitance (IPC) and (2) in-pixel CDS subtraction to reduce kTC noise. We present the read noise, dark current, IPC, energy resolution, and gain variation measurements of one Speedster-EXD detector.

A large-format imager for the SkyMapper Survey Telescope

NASA Astrophysics Data System (ADS)

Granlund, A.; Conroy, P. G.; Keller, S. C.; Oates, A. P.; Schmidt, B.; Waterson, M. F.; Kowald, E.; Dawson, M. I.

2006-06-01

The Research School of Astronomy and Astrophysics (RSAA) of the Australian National University (ANU) at Mt Stromlo Observatory is developing a wide-field Cassegrain Imager for the new 1.3m SkyMapper Survey Telescope under construction for Siding Spring Observatory, NSW, Australia. The Imager features a fast-readout, low-noise 268 Million pixel CCD mosaic that provides a 5.7 square degree field of view. Given the close relative sizes of the telescope and Imager, the work is proceeding in close collaboration with the telescope's manufacturer, Electro Optics Systems Pty Ltd (Canberra, Australia). The design of the SkyMapper Imager focal plane is based on E2V (Chelmsford, UK) deep depletion CCDs. These devices have 2048 x 4096 15 micron pixels, and provide a 91% filling factor in our mosaic configuration of 4 x 8 chips. In addition, the devices have excellent quantum efficiency from 300nm-950nm, near perfect cosmetics, and low-read noise, making them well suited to the all-sky ultraviolet through near-IR Southern Sky Survey to be conducted by the telescope. The array will be controlled using modified versions of the new IOTA controllers being developed for Pan-STARRS by Onaka and Tonry et al. These controllers provide a cost effective, low-volume, high speed solution for our detector read-out requirements. The system will have an integrated 6-filter exchanger, and Shack-Hartmann optics, and will be cooled by closed-cycle helium coolers. This paper will present the specifications, and opto-mechanical and detector control design of the SkyMapper Imager, including the test results of the detector characterisation and manufacturing progress.

Readout of a 176 pixel FDM system for SAFARI TES arrays

NASA Astrophysics Data System (ADS)

Hijmering, R. A.; den Hartog, R.; Ridder, M.; van der Linden, A. J.; van der Kuur, J.; Gao, J. R.; Jackson, B.

2016-07-01

In this paper we present the results of our 176-pixel prototype of the FDM readout system for SAFARI, a TES-based focal-plane instrument for the far-IR SPICA mission. We have implemented the knowledge obtained from the detailed study on electrical crosstalk reported previously. The effect of carrier leakage is reduced by a factor two, mutual impedance is reduced to below 1 nH and mutual inductance is removed. The pixels are connected in stages, one quarter of the array half of the array and the full array, to resolve intermediate technical issues. A semi-automated procedure was incorporated to find all optimal settings for all pixels. And as a final step the complete array has been connected and 132 pixels have been read out simultaneously within the frequency range of 1-3.8MHz with an average frequency separation of 16kHz. The noise was found to be detector limited and was not affected by reading out all pixels in a FDM mode. With this result the concept of using FDM for multiplexed bolometer read out for the SAFARI instrument has been demonstrated.

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability.

PubMed

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U

2015-03-06

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle.

An Ultra-Low Power CMOS Image Sensor with On-Chip Energy Harvesting and Power Management Capability

PubMed Central

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U.

2015-01-01

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle. PMID:25756863

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

NASA Astrophysics Data System (ADS)

Veale, M. C.; Adkin, P.; Booker, P.; Coughlan, J.; French, M. J.; Hart, M.; Nicholls, T.; Schneider, A.; Seller, P.; Pape, I.; Sawhney, K.; Carini, G. A.; Hart, P. A.

2017-12-01

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 105 12 keV photons per image readout at 4.5 MHz. In this paper results from the testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. The performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.

Macro Pixel ASIC (MPA): the readout ASIC for the pixel-strip (PS) module of the CMS outer tracker at HL-LHC

NASA Astrophysics Data System (ADS)

Ceresa, D.; Marchioro, A.; Kloukinas, K.; Kaplon, J.; Bialas, W.; Re, V.; Traversi, G.; Gaioni, L.; Ratti, L.

2014-11-01

The CMS tracker at HL-LHC is required to provide prompt information on particles with high transverse momentum to the central Level 1 trigger. For this purpose, the innermost part of the outer tracker is based on a combination of a pixelated sensor with a short strip sensor, the so-called Pixel-Strip module (PS). The readout of these sensors is carried out by distinct ASICs, the Strip Sensor ASIC (SSA), for the strip layer, and the Macro Pixel ASIC (MPA) for the pixel layer. The processing of the data directly on the front-end module represents a design challenge due to the large data volume (30720 pixels and 1920 strips per module) and the limited power budget. This is the reason why several studies have been carried out to find the best compromise between ASICs performance and power consumption. This paper describes the current status of the MPA ASIC development where the logic for generating prompt information on particles with high transverse momentum is implemented. An overview of the readout method is presented with particular attention on the cluster reduction, position encoding and momentum discrimination logic. Concerning the architectural studies, a software test bench capable of reading physics Monte-Carlo generated events has been developed and used to validate the MPA design and to evaluate the MPA performance. The MPA-Light is scheduled to be submitted for fabrication this year and will include the full analog functions and a part of the digital logic of the final version in order to qualify the chosen VLSI technology for the analog front-end, the module assembly and the low voltage digital supply.

Charge amplitude distribution of the Gossip gaseous pixel detector

NASA Astrophysics Data System (ADS)

Blanco Carballo, V. M.; Chefdeville, M.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Gromov, V.; Hartjes, F.; Kluit, R.; Koffeman, E.; Salm, C.; Schmitz, J.; Smits, S. M.; Timmermans, J.; Visschers, J. L.

2007-12-01

The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few primary electron/ion pairs are created by the traversing particle. To get a detectable signal, the electrons drift towards a perforated metal foil (Micromegas) whereafter they are multiplied in a gas avalanche to provide a detectable signal. The gas avalanche occurs in the high field between the Micromegas and the pixel readout chip (ROC). Compared to a silicon pixel detector, Gossip features a low material budget and a low cooling power. An experiment using X-rays has indicated a possible high radiation tolerance exceeding 10 16 hadrons/cm 2. The amplified charge signal has a broad amplitude distribution due to the limited statistics of the primary ionization and the statistical variation of the gas amplification. Therefore, some degree of inefficiency is inevitable. This study presents experimental results on the charge amplitude distribution for CO 2/DME (dimethyl-ether) and Ar/iC 4H 10 mixtures. The measured curves were fitted with the outcome of a theoretical model. In the model, the physical Landau distribution is approximated by a Poisson distribution that is convoluted with the variation of the gas gain and the electronic noise. The value for the fraction of pedestal events is used for a direct calculation of the cluster density. For some gases, the measured cluster density is considerably lower than given in literature.

Data Processing for a High Resolution Preclinical PET Detector Based on Philips DPC Digital SiPMs

NASA Astrophysics Data System (ADS)

Schug, David; Wehner, Jakob; Goldschmidt, Benjamin; Lerche, Christoph; Dueppenbecker, Peter Michael; Hallen, Patrick; Weissler, Bjoern; Gebhardt, Pierre; Kiessling, Fabian; Schulz, Volkmar

2015-06-01

In positron emission tomography (PET) systems, light sharing techniques are commonly used to readout scintillator arrays consisting of scintillation elements, which are smaller than the optical sensors. The scintillating element is then identified evaluating the signal heights in the readout channels using statistical algorithms, the center of gravity (COG) algorithm being the simplest and mostly used one. We propose a COG algorithm with a fixed number of input channels in order to guarantee a stable calculation of the position. The algorithm is implemented and tested with the raw detector data obtained with the Hyperion-II D preclinical PET insert which uses Philips Digital Photon Counting's (PDPC) digitial SiPMs. The gamma detectors use LYSO scintillator arrays with 30 ×30 crystals of 1 ×1 ×12 mm3 in size coupled to 4 ×4 PDPC DPC 3200-22 sensors (DPC) via a 2-mm-thick light guide. These self-triggering sensors are made up of 2 ×2 pixels resulting in a total of 64 readout channels. We restrict the COG calculation to a main pixel, which captures most of the scintillation light from a crystal, and its (direct and diagonal) neighboring pixels and reject single events in which this data is not fully available. This results in stable COG positions for a crystal element and enables high spatial image resolution. Due to the sensor layout, for some crystals it is very likely that a single diagonal neighbor pixel is missing as a result of the low light level on the corresponding DPC. This leads to a loss of sensitivity, if these events are rejected. An enhancement of the COG algorithm is proposed which handles the potentially missing pixel separately both for the crystal identification and the energy calculation. Using this advancement, we show that the sensitivity of the Hyperion-II D insert using the described scintillator configuration can be improved by 20-100% for practical useful readout thresholds of a single DPC pixel ranging from 17-52 photons. Furthermore, we show that the energy resolution of the scanner is superior for all readout thresholds if singles with a single missing pixel are accepted and correctly handled compared to the COG method only accepting singles with all neighbors present by 0-1.6% (relative difference). The presented methods can not only be applied to gamma detectors employing DPC sensors, but can be generalized to other similarly structured and self-triggering detectors, using light sharing techniques, as well.

A paralleled readout system for an electrical DNA-hybridization assay based on a microstructured electrode array

NASA Astrophysics Data System (ADS)

Urban, Matthias; Möller, Robert; Fritzsche, Wolfgang

2003-02-01

DNA analytics is a growing field based on the increasing knowledge about the genome with special implications for the understanding of molecular bases for diseases. Driven by the need for cost-effective and high-throughput methods for molecular detection, DNA chips are an interesting alternative to more traditional analytical methods in this field. The standard readout principle for DNA chips is fluorescence based. Fluorescence is highly sensitive and broadly established, but shows limitations regarding quantification (due to signal and/or dye instability) and the need for sophisticated (and therefore high-cost) equipment. This article introduces a readout system for an alternative detection scheme based on electrical detection of nanoparticle-labeled DNA. If labeled DNA is present in the analyte solution, it will bind on complementary capture DNA immobilized in a microelectrode gap. A subsequent metal enhancement step leads to a deposition of conductive material on the nanoparticles, and finally an electrical contact between the electrodes. This detection scheme offers the potential for a simple (low-cost as well as robust) and highly miniaturizable method, which could be well-suited for point-of-care applications in the context of lab-on-a-chip technologies. The demonstrated apparatus allows a parallel readout of an entire array of microstructured measurement sites. The readout is combined with data-processing by an embedded personal computer, resulting in an autonomous instrument that measures and presents the results. The design and realization of such a system is described, and first measurements are presented.

Fluxless flip-chip bonding using a lead-free solder bumping technique

NASA Astrophysics Data System (ADS)

Hansen, K.; Kousar, S.; Pitzl, D.; Arab, S.

2017-09-01

With the LHC exceeding the nominal instantaneous luminosity, the current barrel pixel detector (BPIX) of the CMS experiment at CERN will reach its performance limits and undergo significant radiation damage. In order to improve detector performance in high luminosity conditions, the entire BPIX is replaced with an upgraded version containing an additional detection layer. Half of the modules comprising this additional layer are produced at DESY using fluxless and lead-free bumping and bonding techniques. Sequential solder-jetting technique is utilized to wet 40-μm SAC305 solder spheres on the silicon-sensor pads with electroless Ni, Pd and immersion Au (ENEPIG) under-bump metallization (UBM). The bumped sensors are flip-chip assembled with readout chips (ROCs) and then reflowed using a flux-less bonding facility. The challenges for jetting low solder volume have been analyzed and will be presented in this paper. An average speed of 3.4 balls per second is obtained to jet about 67 thousand solder balls on a single chip. On average, 7 modules have been produced per week. The bump-bond quality is evaluated in terms of electrical and mechanical properties. The peak-bump resistance is about 17.5 mΩ. The cross-section study revealed different types of intermetallic compounds (IMC) as a result of interfacial reactions between UBM and solder material. The effect of crystalline phases on the mechanical properties of the joint is discussed. The mean shear strength per bump after the final module reflow is about 16 cN. The results and sources of yield loss of module production are reported. The achieved yield is 95%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.

For this study, we evaluated the X-Y position resolution achievable in 3D pixelated detectors by processing the signal waveforms readout from neighboring pixels. In these measurements we used a focused light beam, down to 10 μm, generated by a ~1 mW pulsed laser (650 nm) to carry out raster scans over selected 3×3 pixel areas, while recording the charge signals from the 9 pixels and the cathode using two synchronized digital oscilloscopes.

Optimizing low-light microscopy with back-illuminated electron multiplying charge-coupled device: enhanced sensitivity, speed, and resolution.

PubMed

Coates, Colin G; Denvir, Donal J; McHale, Noel G; Thornbury, Keith D; Hollywood, Mark A

2004-01-01

The back-illuminated electron multiplying charge-coupled device (EMCCD) camera is having a profound influence on the field of low-light dynamic cellular microscopy, combining highest possible photon collection efficiency with the ability to virtually eliminate the readout noise detection limit. We report here the use of this camera, in 512 x 512 frame-transfer chip format at 10-MHz pixel readout speed, in optimizing a demanding ultra-low-light intracellular calcium flux microscopy setup. The arrangement employed includes a spinning confocal Nipkow disk, which, while facilitating the need to both generate images at very rapid frame rates and minimize background photons, yields very weak signals. The challenge for the camera lies not just in detecting as many of these scarce photons as possible, but also in operating at a frame rate that meets the temporal resolution requirements of many low-light microscopy approaches, a particular demand of smooth muscle calcium flux microscopy. Results presented illustrate both the significant sensitivity improvement offered by this technology over the previous standard in ultra-low-light CCD detection, the GenIII+intensified charge-coupled device (ICCD), and also portray the advanced temporal and spatial resolution capabilities of the EMCCD. Copyright 2004 Society of Photo-Optical Instrumentation Engineers.

Review of the development of diamond radiation sensors

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-09-01

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9×10 15 π cm -2, 5×10 15 p cm -2 and 1.35×10 15 n cm -2, respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2×4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Evaluation of a hybrid pixel detector for electron microscopy.

PubMed

Faruqi, A R; Cattermole, D M; Henderson, R; Mikulec, B; Raeburn, C

2003-04-01

We describe the application of a silicon hybrid pixel detector, containing 64 by 64 pixels, each 170 microm(2), in electron microscopy. The device offers improved resolution compared to CCDs along with faster and noiseless readout. Evaluation of the detector, carried out on a 120 kV electron microscope, demonstrates the potential of the device.

Lensfree on-chip microscopy over a wide field-of-view using pixel super-resolution

PubMed Central

Bishara, Waheb; Su, Ting-Wei; Coskun, Ahmet F.; Ozcan, Aydogan

2010-01-01

We demonstrate lensfree holographic microscopy on a chip to achieve ~0.6 µm spatial resolution corresponding to a numerical aperture of ~0.5 over a large field-of-view of ~24 mm2. By using partially coherent illumination from a large aperture (~50 µm), we acquire lower resolution lensfree in-line holograms of the objects with unit fringe magnification. For each lensfree hologram, the pixel size at the sensor chip limits the spatial resolution of the reconstructed image. To circumvent this limitation, we implement a sub-pixel shifting based super-resolution algorithm to effectively recover much higher resolution digital holograms of the objects, permitting sub-micron spatial resolution to be achieved across the entire sensor chip active area, which is also equivalent to the imaging field-of-view (24 mm2) due to unit magnification. We demonstrate the success of this pixel super-resolution approach by imaging patterned transparent substrates, blood smear samples, as well as Caenoharbditis Elegans. PMID:20588977

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2011-01-01

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

Recent X-ray hybrid CMOS detector developments and measurements

NASA Astrophysics Data System (ADS)

Hull, Samuel V.; Falcone, Abraham D.; Burrows, David N.; Wages, Mitchell; Chattopadhyay, Tanmoy; McQuaide, Maria; Bray, Evan; Kern, Matthew

2017-08-01

The Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors (TIS), have progressed their efforts to improve soft X-ray Hybrid CMOS detector (HCD) technology on multiple fronts. Having newly acquired a Teledyne cryogenic SIDECARTM ASIC for use with HxRG devices, measurements were performed with an H2RG HCD and the cooled SIDECARTM. We report new energy resolution and read noise measurements, which show a significant improvement over room temperature SIDECARTM operation. Further, in order to meet the demands of future high-throughput and high spatial resolution X-ray observatories, detectors with fast readout and small pixel sizes are being developed. We report on characteristics of new X-ray HCDs with 12.5 micron pitch that include in-pixel CDS circuitry and crosstalk-eliminating CTIA amplifiers. In addition, PSU and TIS are developing a new large-scale array Speedster-EXD device. The original 64 × 64 pixel Speedster-EXD prototype used comparators in each pixel to enable event driven readout with order of magnitude higher effective readout rates, which will now be implemented in a 550 × 550 pixel device. Finally, the detector lab is involved in a sounding rocket mission that is slated to fly in 2018 with an off-plane reflection grating array and an H2RG X-ray HCD. We report on the planned detector configuration for this mission, which will increase the NASA technology readiness level of X-ray HCDs to TRL 9.

5A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process

PubMed Central

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm. PMID:23503294

A PFM-based MWIR DROIC employing off-pixel fine conversion of photocharge to digital using integrated column ADCs

NASA Astrophysics Data System (ADS)

Abbasi, S.; Galioglu, A.; Shafique, A.; Ceylan, O.; Yazici, M.; Gurbuz, Y.

2017-02-01

A 32x32 prototype of a digital readout IC (DROIC) for medium-wave infrared focal plane arrays (MWIR IR-FPAs) is presented. The DROIC employs in-pixel photocurrent to digital conversion based on a pulse frequency modulation (PFM) loop and boasts a novel feature of off-pixel residue conversion using 10-bit column SAR ADCs. The remaining charge at the end of integration in typical PFM based digital pixel sensors is usually wasted. Previous works employing in-pixel extended counting methods make use of extra memory and counters to convert this left-over charge to digital, thereby performing fine conversion of the incident photocurrent. This results in a low quantization noise and hence keeps the readout noise low. However, focal plane arrays (FPAs) with small pixel pitch are constrained in pixel area, which makes it difficult to benefit from in-pixel extended counting circuitry. Thus, in this work, a novel approach to measure the residue outside the pixel using column -parallel SAR ADCs has been proposed. Moreover, a modified version of the conventional PFM based pixel has been designed to help hold the residue charge and buffer it to the column ADC. In addition to the 2D array of pixels, the prototype consists of 32 SAR ADCs, a timing controller block and a memory block to buffer the residue data coming out of the ADCs. The prototype has been designed and fabricated in 90nm CMOS.

Opto-mechanical design of PANIC

NASA Astrophysics Data System (ADS)

Fried, Josef W.; Baumeister, Harald; Huber, Armin; Laun, Werner; Rohloff, Ralf-Rainer; Concepción Cárdenas, M.

2010-07-01

PANIC, the Panoramic Near-Infrared Camera, is a new instrument for the Calar Alto Observatory. A 4x4 k detector yields a field of view of 0.5x0.5 degrees at a pixel scale of 0.45 arc sec/pixel at the 2.2m telescope. PANIC can be used also at the 3.5m telescope with half the pixel scale. The optics consists of 9 lenses and 3 folding mirrors. Mechanical tolerances are as small as 50 microns for some elements. PANIC will have a low thermal background due to cold stops. Read-out is done with MPIA's own new electronics which allows read-out of 132 channels in parallel. Weight and size limits lead to interesting design features. Here we describe the opto-mechanical design.

A novel readout integrated circuit for ferroelectric FPA detector

NASA Astrophysics Data System (ADS)

Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

2017-11-01

Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

PubMed Central

Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

2010-01-01

A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

The IBL readout system

NASA Astrophysics Data System (ADS)

Dopke, J.; Falchieri, D.; Flick, T.; Gabrielli, A.; Kugel, A.; Mättig, P.; Morettini, P.; Polini, A.; Schroer, N.

2011-01-01

The first upgrade for the ATLAS Pixel Detector will be an additional layer, which is called IBL (Insertable B-Layer). To readout this new layer, built from new electronics, an update of the readout electronics is necessary. The aim is to develop a system which is capable to read out at a higher bandwidth, but also compatible with the existing system to be integrated into it. This paper describes the necessary development to reach a new readout system, concentrating on the requirements of a newly designed Back of Crate card as the optical interface in the counting room.

A Chip and Pixel Qualification Methodology on Imaging Sensors

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Petkov, Mihail; Nguyen, Duc N.; Novak, Frank

2004-01-01

This paper presents a qualification methodology on imaging sensors. In addition to overall chip reliability characterization based on sensor s overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity, Fixed Pattern Noise and Photon Response Non-Uniformity, a simulation technique is proposed and used to project pixel reliability. The projected pixel reliability is directly related to imaging quality and provides additional sensor reliability information and performance control.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Improved Signal Chains for Readout of CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

2009-01-01

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Large Format CMOS-based Detectors for Diffraction Studies

NASA Astrophysics Data System (ADS)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at reasonable cost.

Radiation hard analog circuits for ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

2016-03-01

The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

NASA Astrophysics Data System (ADS)

Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

2017-09-01

We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

InSb arrays with CCD readout for 1.0- to 5.5-microns infrared applications

NASA Technical Reports Server (NTRS)

Phillips, J. D.; Scorso, J. B.; Thom, R. D.

1976-01-01

There were two approaches for fabricating indium antimonide (InSb) arrays with CCD readout discussed. The hybrid approach integrated InSb detectors and silicon CCDs in a modular assembly via an advanced interconnection technology. In the monolithic approach, the InSb infrared detectors and the CCD readout were integrated on the same InSb chip. Both approaches utilized intrinsic (band-to-band) photodetection with the attendant advantages over extrinsic detectors. The status of each of these detector readout concepts, with pertinent performance characteristics, was presented.

Computation of dark frames in digital imagers

NASA Astrophysics Data System (ADS)

Widenhorn, Ralf; Rest, Armin; Blouke, Morley M.; Berry, Richard L.; Bodegom, Erik

2007-02-01

Dark current is caused by electrons that are thermally exited into the conduction band. These electrons are collected by the well of the CCD and add a false signal to the chip. We will present an algorithm that automatically corrects for dark current. It uses a calibration protocol to characterize the image sensor for different temperatures. For a given exposure time, the dark current of every pixel is characteristic of a specific temperature. The dark current of every pixel can therefore be used as an indicator of the temperature. Hot pixels have the highest signal-to-noise ratio and are the best temperature sensors. We use the dark current of a several hundred hot pixels to sense the chip temperature and predict the dark current of all pixels on the chip. Dark current computation is not a new concept, but our approach is unique. Some advantages of our method include applicability for poorly temperature-controlled camera systems and the possibility of ex post facto dark current correction.

A novel source-drain follower for monolithic active pixel sensors

NASA Astrophysics Data System (ADS)

Gao, C.; Aglieri, G.; Hillemanns, H.; Huang, G.; Junique, A.; Keil, M.; Kim, D.; Kofarago, M.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mugnier, H.; Musa, L.; Lee, S.; Reidt, F.; Riedler, P.; Rousset, J.; Sielewicz, K. M.; Snoeys, W.; Sun, X.; Van Hoorne, J. W.; Yang, P.

2016-09-01

Monolithic active pixel sensors (MAPS) receive interest in tracking applications in high energy physics as they integrate sensor and readout electronics in one silicon die with potential for lower material budget and cost, and better performance. Source followers (SFs) are widely used for MAPS readout: they increase charge conversion gain 1/Ceff or decrease the effective sensing node capacitance Ceff because the follower action compensates part of the input capacitance. Charge conversion gain is critical for analog power consumption and therefore for material budget in tracking applications, and also has direct system impact. This paper presents a novel source-drain follower (SDF), where both source and drain follow the gate potential improving charge conversion gain. For the inner tracking system (ITS) upgrade of the ALICE experiment at CERN, low material budget is a primary requirement. The SDF circuit was studied as part of the effort to optimize the effective capacitance of the sensing node. The collection electrode, input transistor and routing metal all contribute to Ceff. Reverse sensor bias reduces the collection electrode capacitance. The novel SDF circuit eliminates the contribution of the input transistor to Ceff, reduces the routing contribution if additional shielding is introduced, provides a way to estimate the capacitance of the sensor itself, and has a voltage gain closer to unity than the standard SF. The SDF circuit has a somewhat larger area with a somewhat smaller bandwidth, but this is acceptable in most cases. A test chip, manufactured in a 180 nm CMOS image sensor process, implements small prototype pixel matrices in different flavors to compare the standard SF to the novel SF and to the novel SF with additional shielding. The effective sensing node capacitance was measured using a 55Fe source. Increasing reverse substrate bias from -1 V to -6 V reduces Ceff by 38% and the equivalent noise charge (ENC) by 22% for the standard SF. The SDF provides a further 9% improvement for Ceff and 25% for ENC. The SDF circuit with additional shielding provides 18% improvement for Ceff, and combined with -6 V reverse bias yields almost a factor 2.

The Binary Offset Effect in CCDs: an Anomalous Readout Artifact Affecting Most Astronomical CCDs in Use

NASA Astrophysics Data System (ADS)

Boone, Kyle Robert; Aldering, Gregory; Copin, Yannick; Dixon, Samantha; Domagalski, Rachel; Gangler, Emmanuel; Pecontal, Emmanuel; Perlmutter, Saul; Nearby Supernova Factory Collaboration

2018-01-01

We discovered an anomalous behavior of CCD readout electronics that affects their use in many astronomical applications, which we call the “binary offset effect”. Due to feedback in the readout electronics, an offset is introduced in the values read out for each pixel that depends on the binary encoding of the previously read-out pixel values. One consequence of this effect is that a pathological local background offset can be introduced in images that only appears where science data are present on the CCD. The amplitude of this introduced offset does not scale monotonically with the amplitude of the objects in the image, and can be up to 4.5 ADU per pixel for certain instruments. Additionally, this background offset will be shifted by several pixels from the science data, potentially distorting the shape of objects in the image. We tested 22 instruments for signs of the binary offset effect and found evidence of it in 16 of them, including LRIS and DEIMOS on the Keck telescopes, WFC3-UVIS and STIS on HST, MegaCam on CFHT, SNIFS on the UH88 telescope, GMOS on the Gemini telescopes, HSC on Subaru, and FORS on VLT. A large amount of archival data is therefore affected by the binary offset effect, and conventional methods of reducing CCD images do not measure or remove the introduced offsets. As a demonstration of how to correct for the binary offset effect, we have developed a model that can accurately predict and remove the introduced offsets for the SNIFS instrument on the UH88 telescope. Accounting for the binary offset effect is essential for precision low-count astronomical observations with CCDs.

Proposal to upgrade the MIPP data acquisition system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, W.; Carey, D.; Johnstone, C.

2005-03-01

The MIPP TPC is the largest contributor to the MIPP event size by far. Its readout system and electronics were designed in the 1990's and limit it to a readout rate of 60 Hz in simple events and {approx} 20 Hz in complicated events. With the readout chips designed for the ALICE collaboration at the LHC, we propose a low cost effective scheme of upgrading the MIPP data acquisition speed to 3000 Hz.

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE PAGES

Veale, M. C.; Adkin, P.; Booker, P.; ...

2017-12-04

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veale, M. C.; Adkin, P.; Booker, P.

The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 10 5 12 keV photons per image readout at 4.5 MHz. In this paper results from themore » testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. As a result, the performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.« less

Report of the sensor readout electronics panel

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Carson, J.; Kleinhans, W.; Kosonocky, W.; Kozlowski, L.; Pecsalski, A.; Silver, A.; Spieler, H.; Woolaway, J.

1991-01-01

The findings of the Sensor Readout Electronics Panel are summarized in regard to technology assessment and recommended development plans. In addition to two specific readout issues, cryogenic readouts and sub-electron noise, the panel considered three advanced technology areas that impact the ability to achieve large format sensor arrays. These are mega-pixel focal plane packaging issues, focal plane to data processing module interfaces, and event driven readout architectures. Development in each of these five areas was judged to have significant impact in enabling the sensor performance desired for the Astrotech 21 mission set. Other readout issues, such as focal plane signal processing or other high volume data acquisition applications important for Eos-type mapping, were determined not to be relevant for astrophysics science goals.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2000-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izadi, Mohammad Hadi; Karim, Karim S.

2006-05-15

The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, small PPS output signals are swamped by external column charge amplifier and data line thermal noise, which reduce the minimum readable sensor input signal. In contrast to PPS circuits, on-pixel amplifiers in a-Si technology reduce readout noise to levels that can meet even the stringent requirements for low noise digital x-ray fluoroscopy (<1000 noise electrons). However, larger voltagesmore » at the pixel input cause the output of the amplified pixel to become nonlinear thus reducing the dynamic range. We reported a hybrid amplified pixel architecture based on a combination of PPS and amplified pixel designs that, in addition to low noise performance, also resulted in large-signal linearity and consequently higher dynamic range [K. S. Karim et al., Proc. SPIE 5368, 657 (2004)]. The additional benefit in large-signal linearity, however, came at the cost of an additional pixel transistor. We present an amplified pixel design that achieves the goals of low noise performance and large-signal linearity without the need for an additional pixel transistor. Theoretical calculations and simulation results for noise indicate the applicability of the amplified a-Si pixel architecture for high dynamic range, medical x-ray imaging applications that require switching between low exposure, real-time fluoroscopy and high-exposure radiography.« less

Using a pulsed laser beam to investigate the feasibility of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors

DOE PAGES

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.; ...

2017-04-20

For this study, we evaluated the X-Y position resolution achievable in 3D pixelated detectors by processing the signal waveforms readout from neighboring pixels. In these measurements we used a focused light beam, down to 10 μm, generated by a ~1 mW pulsed laser (650 nm) to carry out raster scans over selected 3×3 pixel areas, while recording the charge signals from the 9 pixels and the cathode using two synchronized digital oscilloscopes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allman, M. S., E-mail: shane.allman@boulder.nist.gov; Verma, V. B.; Stevens, M.

We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array as well as characterization measurements are discussed.

3D reconstruction of nuclear reactions using GEM TPC with planar readout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bihałowicz, Jan Stefan

2015-02-24

The research program of the Extreme Light Infrastructure – Nuclear Physics (ELI-NP) laboratory under construction in Magurele, Romania facilities the need of developing a gaseous active-target detector providing 3D reconstruction of charged products of nuclear reactions induced by gamma beam. The monoenergetic, high-energy (E{sub γ} > 19 MeV) gamma beam of intensity 10{sup 13}γ/s allows studying nuclear reactions in astrophysics. A Time Projection Chamber with crossed strip readout (eTPC) is proposed as one of the imaging detectors. The special feature of the readout electrode structure is a 2D reconstruction based on the information read out simultaneously from three arrays ofmore » strips that form virtual pixels. It is expected to reach similar spatial resolution as for pixel readout at largely reduced cost of electronics. The paper presents the current progress and first results of the small scale prototype TPC which is a one of implementation steps towards eTPC detector proposed in the Technical Design Report of Charged Particles Detection at ELI-NP.« less

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors.

PubMed

Kawahito, Shoji; Seo, Min-Woong

2016-11-06

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e - rms ) when compared with the CMS gain of two (2.4 e - rms ), or 16 (1.1 e - rms ).

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors

PubMed Central

Kawahito, Shoji; Seo, Min-Woong

2016-01-01

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e−rms) when compared with the CMS gain of two (2.4 e−rms), or 16 (1.1 e−rms). PMID:27827972

The realization of an SVGA OLED-on-silicon microdisplay driving circuit

NASA Astrophysics Data System (ADS)

Bohua, Zhao; Ran, Huang; Fei, Ma; Guohua, Xie; Zhensong, Zhang; Huan, Du; Jiajun, Luo; Yi, Zhao

2012-03-01

An 800 × 600 pixel organic light-emitting diode-on-silicon (OLEDoS) driving circuit is proposed. The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA. In order to keep the voltage of the column bus at a relatively high level, the sample-and-hold circuits adopt a ping-pong operation. The driving circuit is fabricated in a commercially available 0.35 μm two-poly four-metal 3.3 V mixed-signal CMOS process. The pixel cell area is 15 × 15 μm2 and the total chip occupies 15.5 × 12.3 mm2. Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale (monochrome) display. The total power consumption of the chip is about 85 mW with a 3.3V supply voltage.

Wavelength scanning achieves pixel super-resolution in holographic on-chip microscopy

NASA Astrophysics Data System (ADS)

Luo, Wei; Göröcs, Zoltan; Zhang, Yibo; Feizi, Alborz; Greenbaum, Alon; Ozcan, Aydogan

2016-03-01

Lensfree holographic on-chip imaging is a potent solution for high-resolution and field-portable bright-field imaging over a wide field-of-view. Previous lensfree imaging approaches utilize a pixel super-resolution technique, which relies on sub-pixel lateral displacements between the lensfree diffraction patterns and the image sensor's pixel-array, to achieve sub-micron resolution under unit magnification using state-of-the-art CMOS imager chips, commonly used in e.g., mobile-phones. Here we report, for the first time, a wavelength scanning based pixel super-resolution technique in lensfree holographic imaging. We developed an iterative super-resolution algorithm, which generates high-resolution reconstructions of the specimen from low-resolution (i.e., under-sampled) diffraction patterns recorded at multiple wavelengths within a narrow spectral range (e.g., 10-30 nm). Compared with lateral shift-based pixel super-resolution, this wavelength scanning approach does not require any physical shifts in the imaging setup, and the resolution improvement is uniform in all directions across the sensor-array. Our wavelength scanning super-resolution approach can also be integrated with multi-height and/or multi-angle on-chip imaging techniques to obtain even higher resolution reconstructions. For example, using wavelength scanning together with multi-angle illumination, we achieved a halfpitch resolution of 250 nm, corresponding to a numerical aperture of 1. In addition to pixel super-resolution, the small scanning steps in wavelength also enable us to robustly unwrap phase, revealing the specimen's optical path length in our reconstructed images. We believe that this new wavelength scanning based pixel super-resolution approach can provide competitive microscopy solutions for high-resolution and field-portable imaging needs, potentially impacting tele-pathology applications in resource-limited-settings.

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array withoutmore » any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.« less

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Fossum, E.; Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Zhou, Z.;

ALICE inner tracking system readout electronics prototype testing with the CERN "Giga Bit Transceiver''

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Rossewij, M. J.; Sielewicz, K. M.

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. Furthermore, this contribution describes laboratory and radiation testing results with this prototype board set.

ALICE inner tracking system readout electronics prototype testing with the CERN "Giga Bit Transceiver''

DOE PAGES

Schambach, Joachim; Rossewij, M. J.; Sielewicz, K. M.; ...

2016-12-28

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. Furthermore, this contribution describes laboratory and radiation testing results with this prototype board set.

ALICE inner tracking system readout electronics prototype testing with the CERN ``Giga Bit Transceiver''

NASA Astrophysics Data System (ADS)

Schambach, J.; Rossewij, M. J.; Sielewicz, K. M.; Aglieri Rinella, G.; Bonora, M.; Ferencei, J.; Giubilato, P.; Vanat, T.

2016-12-01

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. This contribution describes laboratory and radiation testing results with this prototype board set.

Nanosecond monolithic CMOS readout cell

DOEpatents

Souchkov, Vitali V.

2004-08-24

A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

Operational characteristics of Wedge and Strip image readout systems

NASA Technical Reports Server (NTRS)

Siegmund, O. H. W.; Lampton, M.; Bixler, J.; Bowyer, S.; Malina, R. F.

1986-01-01

Application of the Wedge and Strip readout system in microchannel plate detectors for the Extreme Ultraviolet Explorer and FAUST space astronomy programs is discussed. Anode designs with high resolution (greater than 600 x 600 pixels) in imaging and spectroscopy applications have been developed. Extension of these designs to larger formats (100 mm) with higher resolution (3000 x 3000 pixels) are considered. It is shown that the resolution and imaging are highly stable, and that the flat field performance is essentially limited by photon statistics. Very high speed event response has also been achieved with output pulses having durations of less than 10 nanoseconds.

Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

2015-10-01

The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

Mega-pixel PQR laser chips for interconnect, display ITS, and biocell-tweezers OEIC

NASA Astrophysics Data System (ADS)

Kwon, O'Dae; Yoon, J. H.; Kim, D. K.; Kim, Y. C.; Lee, S. E.; Kim, S. S.

2008-02-01

We describe a photonic quantum ring (PQR) laser device of three dimensional toroidal whispering gallery cavity. We have succeeded in fabricating the first genuine mega-pixel laser chips via regular semiconductor technology. This has been realized since the present injection laser emitting surface-normal dominant 3D whispering gallery modes (WGMs) can be operated CW with extremely low operating currents (μA-nA per pixel), together with the lasing temperature stabilities well above 140 deg C with minimal redshifts, which solves the well-known integration problems facing the conventional VCSEL. Such properties unusual for quantum well lasers become usual because the active region, involving vertically confining DBR structure in addition to the 2D concave WGM geometry, induces a 'photonic quantum ring (PQR)-like' carrier distribution through a photonic quantum corral effect. A few applications of such mega-pixel PQR chips are explained as follows: (A) Next-generation 3D semiconductor technologies demand a strategy on the inter-chip and intra-chip optical interconnect schemes with a key to the high-density emitter array. (B) Due to mounting traffic problems and fatalities ITS technology today is looking for a revolutionary change in the technology. We will thus outline how 'SLEEP-ITS' can emerge with the PQR's position-sensing capability. (C) We describe a recent PQR 'hole' laser of convex WGM: Mega-pixel PQR 'hole' laser chips are even easier to fabricate than PQR 'mesa' lasers. Genuine Laguerre-Gaussian (LG) beam patterns of PQR holes are very promising for biocell manipulations like sorting mouse myeloid leukemia (M1s) cells. (D) Energy saving and 3D speckle-free POR laser can outdo LEDs in view of red GaAs and blue GaN devices fabricated recently.

Design of a 40-nm CMOS integrated on-chip oscilloscope for 5-50 GHz spin wave characterization

NASA Astrophysics Data System (ADS)

Egel, Eugen; Csaba, György; Dietz, Andreas; Breitkreutz-von Gamm, Stephan; Russer, Johannes; Russer, Peter; Kreupl, Franz; Becherer, Markus

2018-05-01

Spin wave (SW) devices are receiving growing attention in research as a strong candidate for low power applications in the beyond-CMOS era. All SW applications would require an efficient, low power, on-chip read-out circuitry. Thus, we provide a concept for an on-chip oscilloscope (OCO) allowing parallel detection of the SWs at different frequencies. The readout system is designed in 40-nm CMOS technology and is capable of SW device characterization. First, the SWs are picked up by near field loop antennas, placed below yttrium iron garnet (YIG) film, and amplified by a low noise amplifier (LNA). Second, a mixer down-converts the radio frequency (RF) signal of 5 - 50 GHz to lower intermediate frequencies (IF) around 10 - 50 MHz. Finally, the IF signal can be digitized and analyzed regarding the frequency, amplitude and phase variation of the SWs. The power consumption and chip area of the whole OCO are estimated to 166.4 mW and 1.31 mm2, respectively.

Nanophotonic lab-on-a-chip platforms including novel bimodal interferometers, microfluidics and grating couplers.

PubMed

Duval, Daphné; González-Guerrero, Ana Belén; Dante, Stefania; Osmond, Johann; Monge, Rosa; Fernández, Luis J; Zinoviev, Kirill E; Domínguez, Carlos; Lechuga, Laura M

2012-05-08

One of the main limitations for achieving truly lab-on-a-chip (LOC) devices for point-of-care diagnosis is the incorporation of the "on-chip" detection. Indeed, most of the state-of-the-art LOC devices usually require complex read-out instrumentation, losing the main advantages of portability and simplicity. In this context, we present our last advances towards the achievement of a portable and label-free LOC platform with highly sensitive "on-chip" detection by using nanophotonic biosensors. Bimodal waveguide interferometers fabricated by standard silicon processes have been integrated with sub-micronic grating couplers for efficient light in-coupling, showing a phase resolution of 6.6 × 10(-4)× 2π rad and a limit of detection of 3.3 × 10(-7) refractive index unit (RIU) in bulk. A 3D network of SU-8 polymer microfluidics monolithically assembled at the wafer-level was included, ensuring perfect sealing and compact packaging. To overcome some of the drawbacks inherent to interferometric read-outs, a novel all-optical wavelength modulation system has been implemented, providing a linear response and a direct read-out of the phase variation. Sensitivity, specificity and reproducibility of the wavelength modulated BiMW sensor has been demonstrated through the label-free immunodetection of the human hormone hTSH at picomolar level using a reliable biofunctionalization process.

CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

2006-01-01

This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

Development of cryogenic CMOS Readout ASICs for the Point-Contact HPGe Detectors for Dark Matter Search and Neutrino Experiments

NASA Astrophysics Data System (ADS)

Deng, Zhi; He, Li; Liu, Feng; Liu, Yinong; Xue, Tao; Li, Yulan; Yue, Qian

2017-05-01

The paper presents the developments of two cryogenic readout ASICs for the point-contact HPGe detectors for dark matter search and neutrino experiments. Extremely low noise readout electronics were demanded and the capability of working at cryogenic temperatures may bring great advantages. The first ASIC was a monolithic CMOS charge sensitive preamplifier with its noise optimized for ∼1 pF input capacitance. The second ASIC was a waveform recorder based on switched capacitor array. These two ASICs were fabricated in CMOS 350 nm and 180 nm processes respectively. The prototype chips were tested and showed promising results. Both ASICs worked well at low temperature. The preamplifier had achieved ENC of 10.3 electrons with 0.7 pF input capacitance and the SCA chip could run at 9 bit effective resolution and 25 MSPS sampling rate.

Prototype readout electronics and silicon strip detector study for the silicon tracking system at compressed baryonic matter experiment

NASA Astrophysics Data System (ADS)

Kasiński, Krzysztof; Szczygieł, Robert; Gryboś, Paweł

2011-10-01

This paper presents the prototype detector readout electronics for the STS (Silicon Tracking System) at CBM (Compressed Baryonic Matter) experiment at FAIR, GSI (Helmholtzzentrum fuer Schwerionenforschung GmbH) in Germany. The emphasis has been put on the strip detector readout chip and its interconnectivity with detector. Paper discusses the impact of the silicon strip detector and interconnection cable construction on the overall noise of the system and architecture of the TOT02 readout ASIC. The idea and problems of the double-sided silicon detector usage are also presented.

Transparent Nanopore Cavity Arrays Enable Highly Parallelized Optical Studies of Single Membrane Proteins on Chip.

PubMed

Diederichs, Tim; Nguyen, Quoc Hung; Urban, Michael; Tampé, Robert; Tornow, Marc

2018-06-13

Membrane proteins involved in transport processes are key targets for pharmaceutical research and industry. Despite continuous improvements and new developments in the field of electrical readouts for the analysis of transport kinetics, a well-suited methodology for high-throughput characterization of single transporters with nonionic substrates and slow turnover rates is still lacking. Here, we report on a novel architecture of silicon chips with embedded nanopore microcavities, based on a silicon-on-insulator technology for high-throughput optical readouts. Arrays containing more than 14 000 inverted-pyramidal cavities of 50 femtoliter volumes and 80 nm circular pore openings were constructed via high-resolution electron-beam lithography in combination with reactive ion etching and anisotropic wet etching. These cavities feature both, an optically transparent bottom and top cap. Atomic force microscopy analysis reveals an overall extremely smooth chip surface, particularly in the vicinity of the nanopores, which exhibits well-defined edges. Our unprecedented transparent chip design provides parallel and independent fluorescent readout of both cavities and buffer reservoir for unbiased single-transporter recordings. Spreading of large unilamellar vesicles with efficiencies up to 96% created nanopore-supported lipid bilayers, which are stable for more than 1 day. A high lipid mobility in the supported membrane was determined by fluorescent recovery after photobleaching. Flux kinetics of α-hemolysin were characterized at single-pore resolution with a rate constant of 0.96 ± 0.06 × 10 -3 s -1 . Here, we deliver an ideal chip platform for pharmaceutical research, which features high parallelism and throughput, synergistically combined with single-transporter resolution.

Wideband Fully-Programmable Dual-Mode CMOS Analogue Front-End for Electrical Impedance Spectroscopy

PubMed Central

Valente, Virgilio; Demosthenous, Andreas

2016-01-01

This paper presents a multi-channel dual-mode CMOS analogue front-end (AFE) for electrochemical and bioimpedance analysis. Current-mode and voltage-mode readouts, integrated on the same chip, can provide an adaptable platform to correlate single-cell biosensor studies with large-scale tissue or organ analysis for real-time cancer detection, imaging and characterization. The chip, implemented in a 180-nm CMOS technology, combines two current-readout (CR) channels and four voltage-readout (VR) channels suitable for both bipolar and tetrapolar electrical impedance spectroscopy (EIS) analysis. Each VR channel occupies an area of 0.48 mm2, is capable of an operational bandwidth of 8 MHz and a linear gain in the range between −6 dB and 42 dB. The gain of the CR channel can be set to 10 kΩ, 50 kΩ or 100 kΩ and is capable of 80-dB dynamic range, with a very linear response for input currents between 10 nA and 100 μA. Each CR channel occupies an area of 0.21 mm2. The chip consumes between 530 μA and 690 μA per channel and operates from a 1.8-V supply. The chip was used to measure the impedance of capacitive interdigitated electrodes in saline solution. Measurements show close matching with results obtained using a commercial impedance analyser. The chip will be part of a fully flexible and configurable fully-integrated dual-mode EIS system for impedance sensors and bioimpedance analysis. PMID:27463721

Nanophotonic rare-earth quantum memory with optically controlled retrieval

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan M.; Bartholomew, John G.; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D.; Beyer, Andrew D.; Faraon, Andrei

2017-09-01

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Lipson, Jerold

2012-01-01

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

Prototype readout system for a multi Mpixels UV single-photon imaging detector capable of space flight operation

NASA Astrophysics Data System (ADS)

Seljak, A.; Cumming, H. S.; Varner, G.; Vallerga, J.; Raffanti, R.; Virta, V.

2018-02-01

Our collaboration works on the development of a large aperture, high resolution, UV single-photon imaging detector, funded through NASA's Strategic Astrophysics Technology (SAT) program. The detector uses a microchannel plate for charge multiplication, and orthogonal cross strip (XS) anodes for charge readout. Our target is to make an advancement in the technology readiness level (TRL), which enables real scale prototypes to be tested for future NASA missions. The baseline detector has an aperture of 50×50 mm and requires 160 low-noise charge-sensitive channels, in order to extrapolate the incoming photon position with a spatial resolution of about 20 μm FWHM. Technologies involving space flight require highly integrated electronic systems operating at very low power. We have designed two ASICs which enable the construction of such readout system. First, a charge sensitive amplifier (CSAv3) ASIC provides an equivalent noise charge (ENC) of around 600 e-, and a baseline gain of 10 mV/fC. The second, a Giga Sample per Second (GSPS) ASIC, called HalfGRAPH, is a 12-bit analog to digital converter. Its architecture is based on waveform sampling capacitor arrays and has about 8 μs of analog storage memory per channel. Both chips encapsulate 16 measurement channels. Using these chips, a small scale prototype readout system has been constructed on a FPGA Mezzanine Board (FMC), equipped with 32 measurement channels for system evaluation. We describe the construction of HalfGRAPH ASIC, detector's readout system concept and obtained results from the prototype system. As part of the space flight qualification, these chips were irradiated with a Cobalt gamma-ray source, to verify functional operation under ionizing radiation exposure.

A front-end readout mixed chip for high-efficiency small animal PET imaging

NASA Astrophysics Data System (ADS)

Ollivier-Henry, N.; Berst, J. D.; Colledani, C.; Hu-Guo, Ch.; Mbow, N. A.; Staub, D.; Guyonnet, J. L.; Hu, Y.

2007-02-01

Today, the main challenge of Positron Emission Tomography (PET) systems dedicated to small animal imaging is to obtain high detection efficiency and a highly accurate localization of radioisotopes. If we focus only on the PET characteristics such as the spatial resolution, its accuracy depends on the design of detector and on the electronics readout system as well. In this paper, we present a new design of such readout system with full custom submicrometer CMOS implementation. The front end chip consists of two main blocks from which the energy information and the time stamp with subnanosecond resolution can be obtained. In our A Multi-Modality Imaging System for Small Animal (AMISSA) PET system design, a matrix of LYSO crystals has to be read at each end by a 64 channels multianode photomultiplier tube. A specific readout electronic has been developed at the Hubert Curien Multidisciplinary Institute (IPHC, France). The architecture of this readout for the energy information detection is composed of a low-noise preamplifier, a CR-RC shaper and an analogue memory. In order to obtain the required dynamic range from 15 to 650 photoelectrons with good linearity, a current mode approach has been chosen for the preamplifier. To detect the signal with a temporal resolution of 1 ns, a comparator with a very low threshold (˜0.3 photoelectron) has been implemented. It gives the time reference of arrival signal coming from the detector. In order to obtain the time coincidence with a temporal resolution of 1 ns, a Time-to-Digital Converter (TDC) based on a Delay-Locked-Loop (DLL) has been designed. The chip is fabricated with AMS 0.35 μm process. The ASIC architecture and some simulation results will be presented in the paper.

Study of run time errors of the ATLAS pixel detector in the 2012 data taking period

NASA Astrophysics Data System (ADS)

Gandrajula, Reddy Pratap

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don't send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

DOE PAGES

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; ...

2016-01-28

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

PubMed Central

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

2016-01-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

PubMed

Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

2016-03-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

Module and electronics developments for the ATLAS ITk pixel system

NASA Astrophysics Data System (ADS)

Muñoz, F. J.

2018-03-01

The ATLAS experiment is preparing for an extensive modification of its detectors in the course of the planned HL-LHC accelerator upgrade around 2025. The ATLAS upgrade includes the replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will be a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in 2018. In this paper an overview of the ongoing R&D activities on modules and electronics for the ATLAS ITk is given including the main developments and achievements in silicon planar and 3D sensor technologies, readout and power challenges.

High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

NASA Technical Reports Server (NTRS)

Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

2003-01-01

Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

Low noise WDR ROIC for InGaAs SWIR image sensor

NASA Astrophysics Data System (ADS)

Ni, Yang

2017-11-01

Hybridized image sensors are actually the only solution for image sensing beyond the spectral response of silicon devices. By hybridization, we can combine the best sensing material and photo-detector design with high performance CMOS readout circuitry. In the infrared band, we are facing typically 2 configurations: high background situation and low background situation. The performance of high background sensors are conditioned mainly by the integration capacity in each pixel which is the case for mid-wave and long-wave infrared detectors. For low background situation, the detector's performance is mainly limited by the pixel's noise performance which is conditioned by dark signal and readout noise. In the case of reflection based imaging condition, the pixel's dynamic range is also an important parameter. This is the case for SWIR band imaging. We are particularly interested by InGaAs based SWIR image sensors.

A microfluidic microprocessor: controlling biomimetic containers and cells using hybrid integrated circuit/microfluidic chips.

PubMed

Issadore, David; Franke, Thomas; Brown, Keith A; Westervelt, Robert M

2010-11-07

We present an integrated platform for performing biological and chemical experiments on a chip based on standard CMOS technology. We have developed a hybrid integrated circuit (IC)/microfluidic chip that can simultaneously control thousands of living cells and pL volumes of fluid, enabling a wide variety of chemical and biological tasks. Taking inspiration from cellular biology, phospholipid bilayer vesicles are used as robust picolitre containers for reagents on the chip. The hybrid chip can be programmed to trap, move, and porate individual living cells and vesicles and fuse and deform vesicles using electric fields. The IC spatially patterns electric fields in a microfluidic chamber using 128 × 256 (32,768) 11 × 11 μm(2) metal pixels, each of which can be individually driven with a radio frequency (RF) voltage. The chip's basic functions can be combined in series to perform complex biological and chemical tasks and can be performed in parallel on the chip's many pixels for high-throughput operations. The hybrid chip operates in two distinct modes, defined by the frequency of the RF voltage applied to the pixels: Voltages at MHz frequencies are used to trap, move, and deform objects using dielectrophoresis and voltages at frequencies below 1 kHz are used for electroporation and electrofusion. This work represents an important step towards miniaturizing the complex chemical and biological experiments used for diagnostics and research onto automated and inexpensive chips.

Pixel super resolution using wavelength scanning

DTIC Science & Technology

2016-04-08

the light source is adjusted to ~20 μW. The image sensor chip is a color CMOS sensor chip with a pixel size of 1.12 μm manufactured for cellphone...pitch (that is, ~ 1 μm in Figure 3a, using a CMOS sensor that has a 1.12-μm pixel pitch). For the same configuration depicted in Figure 3, utilizing...section). The a Lens-free raw holograms captured by 1.12 μm CMOS image sensor Field of view ≈ 20.5 mm2 Angle change directions for synthetic aperture

Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

PubMed

Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

2013-06-01

We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration.

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

High throughput reconfigurable data analysis system

NASA Technical Reports Server (NTRS)

Bearman, Greg (Inventor); Pelletier, Michael J. (Inventor); Seshadri, Suresh (Inventor); Pain, Bedabrata (Inventor)

2008-01-01

The present invention relates to a system and method for performing rapid and programmable analysis of data. The present invention relates to a reconfigurable detector comprising at least one array of a plurality of pixels, where each of the plurality of pixels can be selected to receive and read-out an input. The pixel array is divided into at least one pixel group for conducting a common predefined analysis. Each of the pixels has a programmable circuitry programmed with a dynamically configurable user-defined function to modify the input. The present detector also comprises a summing circuit designed to sum the modified input.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications.

PubMed

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-12-29

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors' architecture on the basis of the type of electric measurement or imaging functionalities.

Single chip camera active pixel sensor

NASA Technical Reports Server (NTRS)

Shaw, Timothy (Inventor); Pain, Bedabrata (Inventor); Olson, Brita (Inventor); Nixon, Robert H. (Inventor); Fossum, Eric R. (Inventor); Panicacci, Roger A. (Inventor); Mansoorian, Barmak (Inventor)

2003-01-01

A totally digital single chip camera includes communications to operate most of its structure in serial communication mode. The digital single chip camera include a D/A converter for converting an input digital word into an analog reference signal. The chip includes all of the necessary circuitry for operating the chip using a single pin.

ClotChip: A Microfluidic Dielectric Sensor for Point-of-Care Assessment of Hemostasis.

PubMed

Maji, Debnath; Suster, Michael A; Kucukal, Erdem; Sekhon, Ujjal D S; Gupta, Anirban Sen; Gurkan, Umut A; Stavrou, Evi X; Mohseni, Pedram

2017-12-01

This paper describes the design, fabrication, and testing of a microfluidic sensor for dielectric spectroscopy of human whole blood during coagulation. The sensor, termed ClotChip, employs a three-dimensional, parallel-plate, capacitive sensing structure with a floating electrode integrated into a microfluidic channel. Interfaced with an impedance analyzer, the ClotChip measures the complex relative dielectric permittivity, ϵ r , of human whole blood in the frequency range of 40 Hz to 100 MHz. The temporal variation in the real part of the blood dielectric permittivity at 1 MHz features a time to reach a permittivity peak, , as well as a maximum change in permittivity after the peak, , as two distinct parameters of ClotChip readout. The ClotChip performance was benchmarked against rotational thromboelastometry (ROTEM) to evaluate the clinical utility of its readout parameters in capturing the clotting dynamics arising from coagulation factors and platelet activity. exhibited a very strong positive correlation ( r = 0.99, p < 0.0001) with the ROTEM clotting time parameter, whereas exhibited a strong positive correlation (r = 0.85,  p < 0.001) with the ROTEM maximum clot firmness parameter. This paper demonstrates the ClotChip potential as a point-of-care platform to assess the complete hemostatic process using <10 μL of human whole blood.

The Simbol-X Low Energy Detector

NASA Astrophysics Data System (ADS)

Lechner, Peter

2009-05-01

For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, G.; Fried, J.; Rehak, P.

We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read outmore » by four ASICs, covers an area of 12.8 cm{sup 2} and dissipates with the sensor biased about 15 mW/cm{sup 2}. As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44 C show a FWHM of 145 eV at the 5.9 keV peak of a {sup 55}Fe source, and less than 80 eV on a test-pulse line at 200 eV.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

DE GERONIMO,G.; CHEN, W.; FRIED, J.

We present an application specific integrated circuit (ASIC) for high-resolution x-ray spectrometers. The ASIC is designed to read out signals from a pixelated silicon drift detector (SDD). Each hexagonal pixel has an area of 15 mmz and an anode capacitance of less than 100 fF. There is no integrated Field Effect transistor (FET) in the pixel, rather, the readout is done by wirebonding the anodes to the inputs of the ASIC. The ASIC provides 14 channels of low-noise charge amplification, high-order shaping with baseline stabilization, and peak detection with analog memory. The readout is sparse and based on low voltagemore » differential signaling. An interposer provides all the interconnections required to bias and operate the system. The channel dissipates 1.6 mW. The complete 14-pixel unit covers an area of 210 mm{sup 2}, dissipates 12 mW cm{sup -2}, and can be tiled to cover an arbitrarily large detection area. We measured a preliminary resolution of 172 eV at -35 C on the 6 keV peak of a {sup 55}Fe source.« less

Prototypes and system test stands for the Phase 1 upgrade of the CMS pixel detector

DOE PAGES

Hasegawa, S.

2016-04-23

The CMS pixel phase-1 upgrade project replaces the current pixel detector with an upgraded system with faster readout electronics during the extended year-end technical stop of 2016/2017. New electronics prototypes for the system have been developed, and tests in a realistic environment for a comprehensive evaluation are needed. A full readout test stand with either the same hardware as used in the current CMS pixel detector or the latest prototypes of upgrade electronics has been built. The setup enables the observation and investigation of a jitter increase in the data line associated with trigger rate increases. This effect is duemore » to the way in which the clock and trigger distribution is implemented in CMS. A new prototype of the electronics with a PLL based on a voltage controlled quartz crystal oscillator (QPLL), which works as jitter filter, in the clock distribution path was produced. With the test stand, it was confirmed that the jitter increase is not seen with the prototype, and also good performance was confirmed at the expected detector operation temperature ($-$20 °C).« less

Power pulsing of the CMOS sensor Mimosa 26

NASA Astrophysics Data System (ADS)

Kuprash, Oleg

2013-12-01

Mimosa 26 is a monolithic active pixel sensor developed by IPHC (Strasbourg) & IRFU (Saclay) as a prototype for the ILC vertex detector studies. The resolution requirements for the ILC tracking detector are very extreme, demanding very low material in the detector, thus only air cooling can be considered. Power consumption has to be reduced as far as possible. The beam structure of the ILC allows the possibility of power pulsing: only for about the 1 ms long bunch train full power is required, and during the 199 ms long pauses between the bunch trains the power can be reduced to a minimum. Not being adapted for the power pulsing, the sensor shows in laboratory tests a good performance under power pulsing. The power pulsing allows to significantly reduce the heating of the chip and divides power consumption approximately by a factor of 6. In this report a summary of power pulsing studies using the digital readout of Mimosa 26 is given.

1024-Pixel CMOS Multimodality Joint Cellular Sensor/Stimulator Array for Real-Time Holistic Cellular Characterization and Cell-Based Drug Screening.

PubMed

Park, Jong Seok; Aziz, Moez Karim; Li, Sensen; Chi, Taiyun; Grijalva, Sandra Ivonne; Sung, Jung Hoon; Cho, Hee Cheol; Wang, Hua

2018-02-01

This paper presents a fully integrated CMOS multimodality joint sensor/stimulator array with 1024 pixels for real-time holistic cellular characterization and drug screening. The proposed system consists of four pixel groups and four parallel signal-conditioning blocks. Every pixel group contains 16 × 16 pixels, and each pixel includes one gold-plated electrode, four photodiodes, and in-pixel circuits, within a pixel footprint. Each pixel supports real-time extracellular potential recording, optical detection, charge-balanced biphasic current stimulation, and cellular impedance measurement for the same cellular sample. The proposed system is fabricated in a standard 130-nm CMOS process. Rat cardiomyocytes are successfully cultured on-chip. Measured high-resolution optical opacity images, extracellular potential recordings, biphasic current stimulations, and cellular impedance images demonstrate the unique advantages of the system for holistic cell characterization and drug screening. Furthermore, this paper demonstrates the use of optical detection on the on-chip cultured cardiomyocytes to real-time track their cyclic beating pattern and beating rate.

AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

NASA Technical Reports Server (NTRS)

Gottardi, L.; van de Kuur, J.; Bandler, S.; Bruijn, M.; de Korte, P.; Gao, J. R.; den Hartog, R.; Hijmering, R. A.; Hoevers, H.; Koshropanah, P.;

Downsampling Photodetector Array with Windowing

NASA Technical Reports Server (NTRS)

Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

2012-01-01

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated for processing, is used to further reduce the computational requirements. The grouping of the designated pixel frame as the photon count information is sent one word at a time to the GA, the aggregation of the pixels in a window can be achieved by selecting only the designated pixel counts from the serial stream of photon counts, thereby obviating the need to store the entire frame of pixel count in the gate array. The pixel count se quence from each window can then be processed, forming lower-rate pixel statistics for each window. By having this processing occur in the GA rather than in the ASIC, future changes to the processing algorithm can be readily implemented. The high-bandwidth requirements of a photon counting array combined with the properties of the optical modulation being detected by the array present a unique problem that has not been addressed by current CCD or CMOS sensor array solutions.

The use of low resistivity substrates for optimal noise reduction, ground referencing, and current conduction in mixed signal ASICs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zimmerman, T.

1997-12-01

This paper is distilled from a talk given at the 3rd International Meeting on Front End Electronics in Taos, N.M. on Nov. 7,1997. It is based on experience gained by designing and testing the SVX3 128 channel silicon strip detector readout chip. The SVX3 chip organization is shown in Fig. 1. The Front End section consists of an integrator and analog pipeline designed at Fermilab, and the Back End section is an ADC plus sparsification and readout logic designed at LBL. SVX3 is a deadtimeless readout chip, which means that the front end is acquiring low level analog signals whilemore » the back end is digitizing and reading out digital signals. It is thus a true mixed signal chip, and demands close attention to avoid disastrous coupling from the digital to the analog sections. SVX3 is designed in a bulk CMOS process (i.e., the circuits sit in a silicon substrate). In such a process, the substrate becomes a potential coupling path. This paper discusses the effect of the substrate resistivity on coupling, and also goes into a more general discussion of grounding and referencing in mixed signal designs and how low resistivity substrates can be used to advantage. Finally, an alternative power supply current conduction method for ASICs is presented as an additional advantage which can be obtained with low resistivity substrates. 1 ref., 13 figs., 1 tab.« less

Vacuum packaging of InGaAs focal plane array with four-stage thermoelectric cooler

NASA Astrophysics Data System (ADS)

Mo, De-feng; Liu, Da-fu; Yang, Li-yi; Xu, Qin-fei; Li, Xue

2013-09-01

The InGaAs focal plane array (FPA) detectors, covering the near-infrared 1~2.4 μm wavelength range, have been developed for application in space-based spectroscopy of the Earth atmosphere. This paper shows an all-metal vacuum package design for area array InGaAs detector of 1024×64 pixels, and its architecture will be given. Four-stage thermoelectric cooler (TEC) is used to cool down the FPA chip. To acquire high heat dissipation for TEC's Joule-heat, tungsten copper (CuW80) and kovar (4J29) is used as motherboard and cavity material respectively which joined by brazing. The heat loss including conduction, convection and radiation is analyzed. Finite element model is established to analyze the temperature uniformity of the chip substrate which is made of aluminum nitride (AlN). The performance of The TEC with and without heat load in vacuum condition is tested. The results show that the heat load has little influence to current-voltage relationship of TEC. The temperature difference (ΔT) increases as the input current increases. A linear relationship exists between heat load and ΔT of the TEC. Theoretical analysis and calculation show that the heat loss of radiation and conduction is about 187 mW and 82 mW respectively. Considering the Joule-heat of readout circuit and the heat loss of radiation and conduction, the FPA for a 220 K operation at room temperature can be achieved. As the thickness of AlN chip substrate is thicker than 1 millimeter, the temperature difference can be less than 0.3 K.

A high-speed pnCCD detector system for optical applications

NASA Astrophysics Data System (ADS)

Hartmann, R.; Buttler, W.; Gorke, H.; Herrmann, S.; Holl, P.; Meidinger, N.; Soltau, H.; Strüder, L.

2006-11-01

Measurements of a frame-store pnCCD detector system, optimized for high-speed applications in the optical and near infrared (NIR) region, will be presented. The device with an image area of 13.5 mm by 13.5 mm and a pixelsize of 51 μm by 51 μm exhibits a readout time faster than 1100 frames per second with an overall electronic noise contribution of less than three electrons. Variable operation modes of the detector system allow for even higher readout speeds by a pixel binning in transfer direction or, at slightly slower readout speeds, a further improvement in noise performance. We will also present the concept of a data acquisition system being able to handle pixel rates of more than 75 megapixel per second. The application of an anti-reflective coating on the ultra-thin entrance window of the back illuminated detector together with the large sensitive volume ensures a high and uniform detection efficiency from the ultra violet to the NIR.

Flagging and Correction of Pattern Noise in the Kepler Focal Plane Array

NASA Technical Reports Server (NTRS)

Kolodziejczak, Jeffery J.; Caldwell, Douglas A.; VanCleve, Jeffrey E.; Clarke, Bruce D.; Jenkins, Jon M.; Cote, Miles T.; Klaus, Todd C.; Argabright, Vic S.

2010-01-01

In order for Kepler to achieve its required less than 20 PPM photometric precision for magnitude 12 and brighter stars, instrument-induced variations in the CCD readout bias pattern (our "2D black image"), which are either fixed or slowly varying in time, must be identified and the corresponding pixels either corrected or removed from further data processing. The two principle sources of these readout bias variations are crosstalk between the 84 science CCDs and the 4 fine guidance sensor (FGS) CCDs and a high frequency amplifier oscillation on less than 40% of the CCD readout channels. The crosstalk produces a synchronous pattern in the 2D black image with time-variation observed in less than 10% of individual pixel bias histories. We will describe a method of removing the crosstalk signal using continuously-collected data from masked and over-clocked image regions (our "collateral data"), and occasionally-collected full-frame images and reverse-clocked readout signals. We use this same set to detect regions affected by the oscillating amplifiers. The oscillations manifest as time-varying moir pattern and rolling bands in the affected channels. Because this effect reduces the performance in only a small fraction of the array at any given time, we have developed an approach for flagging suspect data. The flags will provide the necessary means to resolve any potential ambiguity between instrument-induced variations and real photometric variations in a target time series. We will also evaluate the effectiveness of these techniques using flight data from background and selected target pixels.

Axial-Centrifugal Compressor Program

DTIC Science & Technology

1975-10-01

chip detector, but they were not large enough to trigger the alarm circuit. These chips we-e analyzed as M50 bearing material, which was a positive...but an analysis of these particles indicated M50 bearing material and positively identified a thrust bearing problem. 50 ’ ! i VI Figure 18. Load Cel...load cell readout became erratic and the vehicle was shut down. An inspection showed that the aft bearing sump chip detector contained M50 bearing

An Automatic Baseline Regulation in a Highly Integrated Receiver Chip for JUNO

NASA Astrophysics Data System (ADS)

Muralidharan, P.; Zambanini, A.; Karagounis, M.; Grewing, C.; Liebau, D.; Nielinger, D.; Robens, M.; Kruth, A.; Peters, C.; Parkalian, N.; Yegin, U.; van Waasen, S.

2017-09-01

This paper describes the data processing unit and an automatic baseline regulation of a highly integrated readout chip (Vulcan) for JUNO. The chip collects data continuously at 1 Gsamples/sec. The Primary data processing which is performed in the integrated circuit can aid to reduce the memory and data processing efforts in the subsequent stages. In addition, a baseline regulator compensating a shift in the baseline is described.

Characterization of multiport solid state imagers at megahertz data rates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yates, G.J.; Pena, C.R.; Turko, B.T.

1994-08-01

Test results obtained from two recently developed multiport Charge-Coupled Devices (CCDs) operated at pixel rates in the 10-to-100 MHz range will be presented . The CCDs were evaluated in Los Alamos National Laboratory`s High Speed Solid State Imager Test Station (HSTS) which features PC-based programmable clock waveform generation (Tektronix DAS 9200) and synchronously clocked Digital Sampling Oscilloscopes (DSOs) (LeCroy 9424/9314 series) for CCD pixel data acquisition, analysis and storage. The HSTS also provided special designed optical pinhole array test patterns in the 5-to-50 micron diameter range for use with Xenon Strobe and pulsed laser light sources to simultaneously provide multiplemore » single-pixel illumination patterns to study CCD point-spread-function (PSF) and pixel smear characteristics. The two CCDs tested, EEV model CCD-13 and EG&G Reticon model HSO512J, are both 512 {times} 512 pixel arrays with eight (8) and sixteen (16) video output ports respectively. Both devices are generically Frame Transfer CCDs (FT CCDs) designed for parallel bi-directional vertical readout to augment their multiport design for increased pixel rates over common single port serial readout architecture. Although both CCDs were tested similarly, differences in their designs precluded normalization or any direct comparisons of test results. Rate dependent parameters investigated include S/N, PSF, and MTF. The performance observed for the two imagers at various pixel rates from selected typical output ports is discussed.« less

Small-angle solution scattering using the mixed-mode pixel array detector.

PubMed

Koerner, Lucas J; Gillilan, Richard E; Green, Katherine S; Wang, Suntao; Gruner, Sol M

2011-03-01

Solution small-angle X-ray scattering (SAXS) measurements were obtained using a 128 × 128 pixel X-ray mixed-mode pixel array detector (MMPAD) with an 860 µs readout time. The MMPAD offers advantages for SAXS experiments: a pixel full-well of >2 × 10(7) 10 keV X-rays, a maximum flux rate of 10(8) X-rays pixel(-1) s(-1), and a sub-pixel point-spread function. Data from the MMPAD were quantitatively compared with data from a charge-coupled device (CCD) fiber-optically coupled to a phosphor screen. MMPAD solution SAXS data from lysozyme solutions were of equal or better quality than data captured by the CCD. The read-noise (normalized by pixel area) of the MMPAD was less than that of the CCD by an average factor of 3.0. Short sample-to-detector distances were required owing to the small MMPAD area (19.2 mm × 19.2 mm), and were revealed to be advantageous with respect to detector read-noise. As predicted by the Shannon sampling theory and confirmed by the acquisition of lysozyme solution SAXS curves, the MMPAD at short distances is capable of sufficiently sampling a solution SAXS curve for protein shape analysis. The readout speed of the MMPAD was demonstrated by continuously monitoring lysozyme sample evolution as radiation damage accumulated. These experiments prove that a small suitably configured MMPAD is appropriate for time-resolved solution scattering measurements.

Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

NASA Technical Reports Server (NTRS)

Rider, D.; Blavier, J-F.; Cunningham, T.; Hancock, B.; Key, R.; Pannell, Z.; Sander, S.; Seshadri, S.; Sun, C.; Wrigley, C.

2011-01-01

Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

PubMed Central

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-01-01

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities. PMID:28879978

Photonic content-addressable memory system that uses a parallel-readout optical disk

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Ashok V.; Marchand, Philippe J.; Yayla, Gökçe; Esener, Sadik C.

1995-11-01

We describe a high-performance associative-memory system that can be implemented by means of an optical disk modified for parallel readout and a custom-designed silicon integrated circuit with parallel optical input. The system can achieve associative recall on 128 \\times 128 bit images and also on variable-size subimages. The system's behavior and performance are evaluated on the basis of experimental results on a motionless-head parallel-readout optical-disk system, logic simulations of the very-large-scale integrated chip, and a software emulation of the overall system.

Electronic readout system for the Belle II imaging Time-Of-Propagation detector

NASA Astrophysics Data System (ADS)

Kotchetkov, Dmitri

2017-07-01

The imaging Time-Of-Propagation (iTOP) detector, constructed for the Belle II experiment at the SuperKEKB e+e- collider, is an 8192-channel high precision Cherenkov particle identification detector with timing resolution below 50 ps. To acquire data from the iTOP, a novel front-end electronic readout system was designed, built, and integrated. Switched-capacitor array application-specific integrated circuits are used to sample analog signals. Triggering, digitization, readout, and data transfer are controlled by Xilinx Zynq-7000 system on a chip devices.

Time Division Multiplexing of Semiconductor Qubits

NASA Astrophysics Data System (ADS)

Jarratt, Marie Claire; Hornibrook, John; Croot, Xanthe; Watson, John; Gardner, Geoff; Fallahi, Saeed; Manfra, Michael; Reilly, David

Readout chains, comprising resonators, amplifiers, and demodulators, are likely to be precious resources in quantum computing architectures. The potential to share readout resources is contingent on realising efficient means of time-division multiplexing (TDM) schemes that are compatible with quantum computing. Here, we demonstrate TDM using a GaAs quantum dot device with multiple charge sensors. Our device incorporates chip-level switches that do not load the impedance matching network. When used in conjunction with frequency multiplexing, each frequency tone addresses multiple time-multiplexed qubits, vastly increasing the capacity of a single readout line.

Crosstalk-free operation of multielement superconducting nanowire single-photon detector array integrated with single-flux-quantum circuit in a 0.1 W Gifford-McMahon cryocooler.

PubMed

Yamashita, Taro; Miki, Shigehito; Terai, Hirotaka; Makise, Kazumasa; Wang, Zhen

2012-07-15

We demonstrate the successful operation of a multielement superconducting nanowire single-photon detector (SSPD) array integrated with a single-flux-quantum (SFQ) readout circuit in a compact 0.1 W Gifford-McMahon cryocooler. A time-resolved readout technique, where output signals from each element enter the SFQ readout circuit with finite time intervals, revealed crosstalk-free operation of the four-element SSPD array connected with the SFQ readout circuit. The timing jitter and the system detection efficiency were measured to be 50 ps and 11.4%, respectively, which were comparable to the performance of practical single-pixel SSPD systems.

Challenges and trends in magnetic sensor integration with microfluidics for biomedical applications

NASA Astrophysics Data System (ADS)

Cardoso, S.; Leitao, D. C.; Dias, T. M.; Valadeiro, J.; Silva, M. D.; Chicharo, A.; Silverio, V.; Gaspar, J.; Freitas, P. P.

2017-06-01

Magnetoresistive (MR) sensors have been successfully applied in many technologies, in particular readout electronics and smart systems for multiple signal addressing and readout. When single sensors are used, the requirements relate to spatial resolution and localized field sources. The integration of MR sensors in adaptable media (e.g. flexible, stretchable substrates) offers the possibility to merge the magnetic detection with mechanical functionalities. In addition, the precision of a micrometric needle can benefit greatly from the integration of MR sensors with submicrometric resolution. In this paper, we demonstrate through several detailed examples how advanced MR sensors can be integrated with the systems described above, and also with microfluidic technologies. Here, the challenges of handling liquids over a chip combine with those for miniaturization of microelectronics for MR readout. However, when these are overcome, the result is an integrated system with added functionalities, capable of answering the demand in biomedicine and biochemistry for lab-on-a-chip devices.

Recent advances in superconducting nanowire single photon detectors for single-photon imaging

NASA Astrophysics Data System (ADS)

Verma, V. B.; Allman, M. S.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Marsili, F.; Beyer, A.; Shaw, M. D.; Stern, J. A.; Mirin, R. P.; Nam, S. W.

2016-05-01

We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array, as well as characterization measurements are discussed.

Camera-on-a-Chip

NASA Technical Reports Server (NTRS)

1999-01-01

Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2006-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

VizieR Online Data Catalog: BVRI photometry of S5 0716+714 (Liao+, 2014)

NASA Astrophysics Data System (ADS)

Liao, N. H.; Bai, J. M.; Liu, H. T.; Weng, S. S.; Chen, L.; Li, F.

2016-04-01

The variability of S5 0716+714 was photometrically monitored in the optical bands at Yunnan Observatories, making use of the 2.4m telescope (http://www.gmg.org.cn/) and the 1.02m telescope (http://www1.ynao.ac.cn/~omt/). The 2.4m telescope, which began working in 2008 May, is located at the Lijiang Observatory of Yunnan Observatories, where the longitude is 100°01'51''E and the latitude is 26°42'32''N, with an altitude of 3193m. There are two photometric terminals. The PI VersArry 1300B CCD camera with 1340*1300 pixels covers a field of view 4'48''*4'40'' at the Cassegrain focus. The readout noise and gain are 6.05 electrons and 1.1 electrons ADU-1, respectively. The Yunnan Faint Object Spectrograph and Camera (YFOSC) has a field of view of about 10'*10' and 2000*2000 pixels for photometric observation. Each pixel corresponds to 0.283'' of the sky. The readout noise and gain of the YFOSC CCD are 7.5 electrons and 0.33 electrons ADU-1, respectively. The 1.02m telescope is located at the headquarters of Yunnan Observatories and is mainly used for photometry with standard Johnson UBV and Cousins RI filters. An Andor CCD camera with 2048*2048 pixels has been installed at its Cassegrain focus since 2008 May. The readout noise and gain are 7.8 electrons and 1.1 electrons ADU-1, respectively. (1 data file).

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

SVGA and XGA LCOS microdisplays for HMD applications

NASA Astrophysics Data System (ADS)

Bolotski, Michael; Alvelda, Phillip

1999-07-01

MicroDisplay liquid crystal on silicon (LCOS) display devices are based on a combination of technologies combined with the extreme integration capability of conventionally fabricated CMOS substrates. Two recent SVGA (800 X 600) pixel resolution designs were demonstrated based on 10 micron and 12.5-micron pixel pitch architectures. The resulting microdisplays measure approximately 10 mm and 12 mm in diagonal respectively. Further, an XGA (1024 X 768) resolution display fabricated with a 12.5-micron pixel pitch with a 16-mm diagonal was also demonstrated. Both the larger SVGA and the XGA design were based on the same 12.5-micron pixel-pitch design, demonstrating a quickly scalable design architecture for rapid prototyping life-cycles. All three microdisplay designs described above function in grayscale and high-performance Field-Sequential-Color (FSC) operating modes. The fast liquid crystal operating modes and new scalable high- performance pixel addressing architectures presented in this paper enable substantially improved color, contrast, and brightness while still satisfying the optical, packaging, and power requirements of portable commercial and defense applications including ultra-portable helmet, eyeglass, and heat-mounted systems. The entire suite of The MicroDisplay Corporation's technologies was devised to create a line of mixed-signal application-specific integrated circuits (ASIC) in single-chip display systems. Mixed-signal circuits can integrate computing, memory, and communication circuitry on the same substrate as the display drivers and pixel array for a multifunctional complete system-on-a-chip. For helmet and head-mounted displays this can include capabilities such as the incorporation of customized symbology and information storage directly on the display substrate. System-on-a-chip benefits also include reduced head supported weight requirements through the elimination of off-chip drive electronics.

On Certain New Methodology for Reducing Sensor and Readout Electronics Circuitry Noise in Digital Domain

NASA Technical Reports Server (NTRS)

Kizhner, Semion; Miko, Joseph; Bradley, Damon; Heinzen, Katherine

2008-01-01

NASA Hubble Space Telescope (HST) and upcoming cosmology science missions carry instruments with multiple focal planes populated with many large sensor detector arrays. These sensors are passively cooled to low temperatures for low-level light (L3) and near-infrared (NIR) signal detection, and the sensor readout electronics circuitry must perform at extremely low noise levels to enable new required science measurements. Because we are at the technological edge of enhanced performance for sensors and readout electronics circuitry, as determined by thermal noise level at given temperature in analog domain, we must find new ways of further compensating for the noise in the signal digital domain. To facilitate this new approach, state-of-the-art sensors are augmented at their array hardware boundaries by non-illuminated reference pixels, which can be used to reduce noise attributed to sensors. There are a few proposed methodologies of processing in the digital domain the information carried by reference pixels, as employed by the Hubble Space Telescope and the James Webb Space Telescope Projects. These methods involve using spatial and temporal statistical parameters derived from boundary reference pixel information to enhance the active (non-reference) pixel signals. To make a step beyond this heritage methodology, we apply the NASA-developed technology known as the Hilbert- Huang Transform Data Processing System (HHT-DPS) for reference pixel information processing and its utilization in reconfigurable hardware on-board a spaceflight instrument or post-processing on the ground. The methodology examines signal processing for a 2-D domain, in which high-variance components of the thermal noise are carried by both active and reference pixels, similar to that in processing of low-voltage differential signals and subtraction of a single analog reference pixel from all active pixels on the sensor. Heritage methods using the aforementioned statistical parameters in the digital domain (such as statistical averaging of the reference pixels themselves) zeroes out the high-variance components, and the counterpart components in the active pixels remain uncorrected. This paper describes how the new methodology was demonstrated through analysis of fast-varying noise components using the Hilbert-Huang Transform Data Processing System tool (HHT-DPS) developed at NASA and the high-level programming language MATLAB (Trademark of MathWorks Inc.), as well as alternative methods for correcting for the high-variance noise component, using an HgCdTe sensor data. The NASA Hubble Space Telescope data post-processing, as well as future deep-space cosmology projects on-board instrument data processing from all the sensor channels, would benefit from this effort.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Front-end multiplexing—applied to SQUID multiplexing: Athena X-IFU and QUBIC experiments

NASA Astrophysics Data System (ADS)

Prele, D.

2015-08-01

As we have seen for digital camera market and a sensor resolution increasing to "megapixels", all the scientific and high-tech imagers (whatever the wave length - from radio to X-ray range) tends also to always increases the pixels number. So the constraints on front-end signals transmission increase too. An almost unavoidable solution to simplify integration of large arrays of pixels is front-end multiplexing. Moreover, "simple" and "efficient" techniques allow integration of read-out multiplexers in the focal plane itself. For instance, CCD (Charge Coupled Device) technology has boost number of pixels in digital camera. Indeed, this is exactly a planar technology which integrates both the sensors and a front-end multiplexed readout. In this context, front-end multiplexing techniques will be discussed for a better understanding of their advantages and their limits. Finally, the cases of astronomical instruments in the millimeter and in the X-ray ranges using SQUID (Superconducting QUantum Interference Device) will be described.

ePix: a class of architectures for second generation LCLS cameras

DOE PAGES

Dragone, A.; Caragiulo, P.; Markovic, B.; ...

2014-03-31

ePix is a novel class of ASIC architectures, based on a common platform, optimized to build modular scalable detectors for LCLS. The platform architecture is composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog-to-digital converters per column. It also implements a dedicated control interface and all the required support electronics to perform configuration, calibration and readout of the matrix. Based on this platform a class of front-end ASICs and several camera modules, meeting different requirements, can be developed by designing specific pixel architectures. This approach reduces development time andmore » expands the possibility of integration of detector modules with different size, shape or functionality in the same camera. The ePix platform is currently under development together with the first two integrating pixel architectures: ePix100 dedicated to ultra low noise applications and ePix10k for high dynamic range applications.« less

Design of a CCD Camera for Space Surveillance

DTIC Science & Technology

2016-03-05

Laboratory fabricated CCID-51M, a 2048x1024 pixel Charge Couple Device (CCD) imager. [1] The mission objective is to observe and detect satellites in...phased to transfer the charge to the outputs. An electronic shutter is created by having an equal area of pixels covered by an opaque metal mask. The...Figure 4 CDS Timing Diagram By design the CCD readout rate is 400 KHz. This rate was chosen so reading the 2E6 pixels from one output is less than

Low-noise readout circuit for SWIR focal plane arrays

NASA Astrophysics Data System (ADS)

Altun, Oguz; Tasdemir, Ferhat; Nuzumlali, Omer Lutfi; Kepenek, Reha; Inceturkmen, Ercihan; Akyurek, Fatih; Tunca, Can; Akbulut, Mehmet

2017-02-01

This paper reports a 640x512 SWIR ROIC with 15um pixel pitch that is designed and fabricated using 0.18um CMOS process. Main challenge of SWIR ROIC design is related to input circuit due to pixel area and noise limitations. In this design, CTIA with single stage amplifier is utilized as input stage. The pixel design has three pixel gain options; High Gain (HG), Medium Gain (MG), and Low Gain (LG) with corresponding Full-Well-Capacities of 18.7ké, 190ké and 1.56Mé, respectively. According to extracted simulation results, 5.9é noise is achieved at HG mode and 200é is achieved at LG mode of operation. The ROIC can be programmed through an SPI interface. It supports 1, 2 and 4 output modes which enables the user to configure the detector to work at 30, 60 and 120fps frame rates. In the 4 output mode, the total power consumption of the ROIC is less than 120mW. The ROIC is powered from a 3.3V analog supply and allows for an output swing range in excess of 2V. Anti-blooming feature is added to prevent any unwanted blooming effect during readout.

Design and synthesis of target-responsive aptamer-cross-linked hydrogel for visual quantitative detection of ochratoxin A.

PubMed

Liu, Rudi; Huang, Yishun; Ma, Yanli; Jia, Shasha; Gao, Mingxuan; Li, Jiuxing; Zhang, Huimin; Xu, Dunming; Wu, Min; Chen, Yan; Zhu, Zhi; Yang, Chaoyong

2015-04-01

A target-responsive aptamer-cross-linked hydrogel was designed and synthesized for portable and visual quantitative detection of the toxin Ochratoxin A (OTA), which occurs in food and beverages. The hydrogel network forms by hybridization between one designed DNA strand containing the OTA aptamer and two complementary DNA strands grafting on linear polyacrylamide chains. Upon the introduction of OTA, the aptamer binds with OTA, leading to the dissociation of the hydrogel, followed by release of the preloaded gold nanoparticles (AuNPs), which can be observed by the naked eye. To enable sensitive visual and quantitative detection, we encapsulated Au@Pt core-shell nanoparticles (Au@PtNPs) in the hydrogel to generate quantitative readout in a volumetric bar-chart chip (V-Chip). In the V-Chip, Au@PtNPs catalyzes the oxidation of H2O2 to generate O2, which induces movement of an ink bar to a concentration-dependent distance for visual quantitative readout. Furthermore, to improve the detection limit in complex real samples, we introduced an immunoaffinity column (IAC) of OTA to enrich OTA from beer. After the enrichment, as low as 1.27 nM (0.51 ppb) OTA can be detected by the V-Chip, which satisfies the test requirement (2.0 ppb) by the European Commission. The integration of a target-responsive hydrogel with portable enrichment by IAC, as well as signal amplification and quantitative readout by a simple microfluidic device, offers a new method for portable detection of food safety hazard toxin OTA.

A fast and reliable readout method for quantitative analysis of surface-enhanced Raman scattering nanoprobes on chip surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Hyejin; Jeong, Sinyoung; Ko, Eunbyeol

2015-05-15

Surface-enhanced Raman scattering techniques have been widely used for bioanalysis due to its high sensitivity and multiplex capacity. However, the point-scanning method using a micro-Raman system, which is the most common method in the literature, has a disadvantage of extremely long measurement time for on-chip immunoassay adopting a large chip area of approximately 1-mm scale and confocal beam point of ca. 1-μm size. Alternative methods such as sampled spot scan with high confocality and large-area scan method with enlarged field of view and low confocality have been utilized in order to minimize the measurement time practically. In this study, wemore » analyzed the two methods in respect of signal-to-noise ratio and sampling-led signal fluctuations to obtain insights into a fast and reliable readout strategy. On this basis, we proposed a methodology for fast and reliable quantitative measurement of the whole chip area. The proposed method adopted a raster scan covering a full area of 100 μm × 100 μm region as a proof-of-concept experiment while accumulating signals in the CCD detector for single spectrum per frame. One single scan with 10 s over 100 μm × 100 μm area yielded much higher sensitivity compared to sampled spot scanning measurements and no signal fluctuations attributed to sampled spot scan. This readout method is able to serve as one of key technologies that will bring quantitative multiplexed detection and analysis into practice.« less

SAPHIRE (scintillator avalanche photoconductor with high resolution emitter readout) for low dose x-ray imaging: Spatial resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Dan; Zhao Wei

2008-07-15

An indirect flat panel imager (FPI) with programmable avalanche gain and field emitter array (FEA) readout is being investigated for low-dose and high resolution x-ray imaging. It is made by optically coupling a structured x-ray scintillator, e.g., thallium (Tl) doped cesium iodide (CsI), to an amorphous selenium (a-Se) avalanche photoconductor called high-gain avalanche rushing amorphous photoconductor (HARP). The charge image created by the scintillator/HARP (SHARP) combination is read out by the electron beams emitted from the FEA. The proposed detector is called scintillator avalanche photoconductor with high resolution emitter readout (SAPHIRE). The programmable avalanche gain of HARP can improve themore » low dose performance of indirect FPI while the FEA can be made with pixel sizes down to 50 {mu}m. Because of the avalanche gain, a high resolution type of CsI (Tl), which has not been widely used in indirect FPI due to its lower light output, can be used to improve the high spatial frequency performance. The purpose of the present article is to investigate the factors affecting the spatial resolution of SAPHIRE. Since the resolution performance of the SHARP combination has been well studied, the focus of the present work is on the inherent resolution of the FEA readout method. The lateral spread of the electron beam emitted from a 50 {mu}mx50 {mu}m pixel FEA was investigated with two different electron-optical designs: mesh-electrode-only and electrostatic focusing. Our results showed that electrostatic focusing can limit the lateral spread of electron beams to within the pixel size of down to 50 {mu}m. Since electrostatic focusing is essentially independent of signal intensity, it will provide excellent spatial uniformity.« less

Optimising the multiplex factor of the frequency domain multiplexed readout of the TES-based microcalorimeter imaging array for the X-IFU instrument on the Athena x-ray observatory

NASA Astrophysics Data System (ADS)

van der Kuur, J.; Gottardi, L. G.; Akamatsu, H.; van Leeuwen, B. J.; den Hartog, R.; Haas, D.; Kiviranta, M.; Jackson, B. J.

2016-07-01

Athena is a space-based X-ray observatory intended for exploration of the hot and energetic universe. One of the science instruments on Athena will be the X-ray Integrated Field Unit (X-IFU), which is a cryogenic X-ray spectrometer, based on a large cryogenic imaging array of Transition Edge Sensors (TES) based microcalorimeters operating at a temperature of 100mK. The imaging array consists of 3800 pixels providing 2.5 eV spectral resolution, and covers a field of view with a diameter of of 5 arc minutes. Multiplexed readout of the cryogenic microcalorimeter array is essential to comply with the cooling power and complexity constraints on a space craft. Frequency domain multiplexing has been under development for the readout of TES-based detectors for this purpose, not only for the X-IFU detector arrays but also for TES-based bolometer arrays for the Safari instrument of the Japanese SPICA observatory. This paper discusses the design considerations which are applicable to optimise the multiplex factor within the boundary conditions as set by the space craft. More specifically, the interplay between the science requirements such as pixel dynamic range, pixel speed, and cross talk, and the space craft requirements such as the power dissipation budget, available bandwidth, and electromagnetic compatibility will be discussed.

Performance of CATIROC: ASIC for smart readout of large photomultiplier arrays

NASA Astrophysics Data System (ADS)

Blin, S.; Callier, S.; Conforti Di Lorenzo, S.; Dulucq, F.; De La Taille, C.; Martin-Chassard, G.; Seguin-Moreau, N.

2017-03-01

CATIROC (Charge And Time Integrated Read Out Chip) is a complete read-out chip manufactured in AustriaMicroSystem (AMS) SiGe 0.35 μm technology, designed to read arrays of 16 photomultipliers (PMTs). It is an upgraded version of PARISROC2 [1] designed in 2010 in the context of the PMm2 (square meter PhotoMultiplier) project [2]. CATIROC is a SoC (System on Chip) that processes analog signals up to the digitization and sparsification to reduce the cost and cable number. The ASIC is composed of 16 independent channels that work in triggerless mode, auto-triggering on the single photo-electron. It provides a charge measurement up to 400 photoelectrons (70 pC) on two scales of 10 bits and a timing information with an accuracy of 200 ps rms. The ASIC was sent for fabrication in February 2015 and then received in September 2015. It is a good candidate for two Chinese projects (LHAASO and JUNO). The architecture and the measurements will be detailed in the paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Ling-Jian

A gamma ray detector apparatus comprises a solid state detector that includes a plurality of anode pixels and at least one cathode. The solid state detector is configured for receiving gamma rays during an interaction and inducing a signal in an anode pixel and in a cathode. An anode pixel readout circuit is coupled to the plurality of anode pixels and is configured to read out and process the induced signal in the anode pixel and provide triggering and addressing information. A waveform sampling circuit is coupled to the at least one cathode and configured to read out and processmore » the induced signal in the cathode and determine energy of the interaction, timing of the interaction, and depth of interaction.« less

Small-angle solution scattering using the mixed-mode pixel array detector

PubMed Central

Koerner, Lucas J.; Gillilan, Richard E.; Green, Katherine S.; Wang, Suntao; Gruner, Sol M.

2011-01-01

Solution small-angle X-ray scattering (SAXS) measurements were obtained using a 128 × 128 pixel X-ray mixed-mode pixel array detector (MMPAD) with an 860 µs readout time. The MMPAD offers advantages for SAXS experiments: a pixel full-well of >2 × 107 10 keV X-rays, a maximum flux rate of 108 X-rays pixel−1 s−1, and a sub-pixel point-spread function. Data from the MMPAD were quantitatively compared with data from a charge-coupled device (CCD) fiber-optically coupled to a phosphor screen. MMPAD solution SAXS data from lysozyme solutions were of equal or better quality than data captured by the CCD. The read-noise (normalized by pixel area) of the MMPAD was less than that of the CCD by an average factor of 3.0. Short sample-to-detector distances were required owing to the small MMPAD area (19.2 mm × 19.2 mm), and were revealed to be advantageous with respect to detector read-noise. As predicted by the Shannon sampling theory and confirmed by the acquisition of lysozyme solution SAXS curves, the MMPAD at short distances is capable of sufficiently sampling a solution SAXS curve for protein shape analysis. The readout speed of the MMPAD was demonstrated by continuously monitoring lysozyme sample evolution as radiation damage accumulated. These experiments prove that a small suitably configured MMPAD is appropriate for time-resolved solution scattering measurements. PMID:21335900

Particle tracking with a Timepix based triple GEM detector

NASA Astrophysics Data System (ADS)

George, S. P.; Murtas, F.; Alozy, J.; Curioni, A.; Rosenfeld, A. B.; Silari, M.

2015-11-01

This paper details the response of a triple GEM detector with a 55 μmetre pitch pixelated ASIC for readout. The detector is operated as a micro TPC with 9.5 cm3 sensitive volume and characterized with a mixed beam of 120 GeV protons and positive pions. A process for reconstruction of incident particle tracks from individual ionization clusters is described and scans of the gain and drift fields are performed. The angular resolution of the measured tracks is characterized. Also, the readout was operated in a mixed mode where some pixels measure drift time and others charge. This was used to measure the energy deposition in the detector and the charge cloud size as a function of interaction depth. The future uses of the device, including in microdosimetry are discussed.

Low cost lab-on-a-chip prototyping with a consumer grade 3D printer.

PubMed

Comina, Germán; Suska, Anke; Filippini, Daniel

2014-08-21

Versatile prototyping of 3D printed lab-on-a-chip devices, supporting different forms of sample delivery, transport, functionalization and readout, is demonstrated with a consumer grade printer, which centralizes all critical fabrication tasks. Devices cost 0.57US$ and are demonstrated in chemical sensing and micromixing examples, which exploit established principles from reference technologies.

Design of a CMOS integrated on-chip oscilloscope for spin wave characterization

NASA Astrophysics Data System (ADS)

Egel, Eugen; Meier, Christian; Csaba, György; Breitkreutz-von Gamm, Stephan

2017-05-01

Spin waves can perform some optically-inspired computing algorithms, e.g. the Fourier transform, directly than it is done with the CMOS logic. This article describes a new approach for on-chip characterization of spin wave based devices. The readout circuitry for the spin waves is simulated with 65-nm CMOS technology models. Commonly used circuits for Radio Frequency (RF) receivers are implemented to detect a sinusoidal ultra-wideband (5-50 GHz) signal with an amplitude of at least 15 μV picked up by a loop antenna. First, the RF signal is amplified by a Low Noise Amplifier (LNA). Then, it is down-converted by a mixer to Intermediate Frequency (IF). Finally, an Operational Amplifier (OpAmp) brings the IF signal to higher voltages (50-300 mV). The estimated power consumption and the required area of the readout circuit is approximately 55.5 mW and 0.168 mm2, respectively. The proposed On-Chip Oscilloscope (OCO) is highly suitable for on-chip spin wave characterization regarding the frequency, amplitude change and phase information. It offers an integrated low power alternative to current spin wave detecting systems.

Characteristics of a multichannel low-noise front-end ASIC for CZT-based small animal PET imaging

NASA Astrophysics Data System (ADS)

Gao, W.; Liu, H.; Gan, B.; Hu, Y.

2014-05-01

In this paper, we present the design and characteristics of a novel low-noise front-end readout application-specific integrated circuit dedicated to CdZnTe (CZT) detectors for a small animal PET imaging system. A low-noise readout method based on the charge integration and the delayed peak detection is proposed. An eight-channel front-end readout prototype chip is designed and implemented in a 0.35 μm CMOS process. The die size is 2.3 mm ×2.3 mm. The prototype chip is tested in different methods including electronic test, energy spectrum test and irradiation test. The input range of the ASIC is from 2000e- to 180,000e-, reflecting the energy of the gamma ray from 11.2 keV to 1 MeV. The gain of the readout channel is 65 mV/fC at the shaping time of 1 μs. The best test result of the equivalent noise charge (ENC) is 58.9 e- at zero farad plus 5.4 e- per picofarad. The nonlinearity and the crosstalk are less than 3% and less than 2%, respectively, at the room temperature. The static power dissipation is about 3 mW/channel.

VIPRAM_L1CMS: a 2-Tier 3D Architecture for Pattern Recognition for Track Finding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoff, J. R.; Joshi, Joshi,S.; Liu, Liu,

In HEP tracking trigger applications, flagging an individual detector hit is not important. Rather, the path of a charged particle through many detector layers is what must be found. Moreover, given the increased luminosity projected for future LHC experiments, this type of track finding will be required within the Level 1 Trigger system. This means that future LHC experiments require not just a chip capable of high-speed track finding but also one with a high-speed readout architecture. VIPRAM_L1CMS is 2-Tier Vertically Integrated chip designed to fulfill these requirements. It is a complete pipelined Pattern Recognition Associative Memory (PRAM) architecture includingmore » pattern recognition, result sparsification, and readout for Level 1 trigger applications in CMS with 15-bit wide detector addresses and eight detector layers included in the track finding. Pattern recognition is based on classic Content Addressable Memories with a Current Race Scheme to reduce timing complexity and a 4-bit Selective Precharge to minimize power consumption. VIPRAM_L1CMS uses a pipelined set of priority-encoded binary readout structures to sparsify and readout active road flags at frequencies of at least 100MHz. VIPRAM_L1CMS is designed to work directly with the Pulsar2b Architecture.« less

Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-08-01

×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

Improved charge injection device and a focal plane interface electronics board for stellar tracking

NASA Technical Reports Server (NTRS)

Michon, G. J.; Burke, H. K.

1984-01-01

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

A novel radiation hard pixel design for space applications

NASA Astrophysics Data System (ADS)

Aurora, A. M.; Marochkin, V. V.; Tuuva, T.

2017-11-01

We have developed a novel radiation hard photon detector concept based on Modified Internal Gate Field Effect Transistor (MIGFET) wherein a buried Modified Internal Gate (MIG) is implanted underneath a channel of a FET. In between the MIG and the channel of the FET there is depleted semiconductor material forming a potential barrier between charges in the channel and similar type signal charges located in the MIG. The signal charges in the MIG have a measurable effect on the conductance of the channel. In this paper a radiation hard double MIGFET pixel is investigated comprising two MIGFETs. By transferring the signal charges between the two MIGs Non-Destructive Correlated Double Sampling Readout (NDCDSR) is enabled. The radiation hardness of the proposed double MIGFET structure stems from the fact that interface related issues can be considerably mitigated. The reason for this is, first of all, that interface generated dark noise can be completely avoided and secondly, that interface generated 1/f noise can be considerably reduced due to a deep buried channel readout configuration. Electrical parameters of the double MIGFET pixel have been evaluated by 3D TCAD simulation study. Simulation results show the absence of interface generated dark noise, significantly reduced interface generated 1/f noise, well performing NDCDSR operation, and blooming protection due to an inherent vertical anti-blooming structure. In addition, the backside illuminated thick fully depleted pixel design results in low crosstalk due to lack of diffusion and good quantum efficiency from visible to Near Infra-Red (NIR) light. These facts result in excellent Signal-to-Noise Ratio (SNR) and very low crosstalk enabling thus excellent image quality. The simulation demonstrates the charge to current conversion gain for source current read-out to be 1.4 nA/e.

TES Detector Noise Limited Readout Using SQUID Multiplexers

NASA Technical Reports Server (NTRS)

Staguhn, J. G.; Benford, D. J.; Chervenak, J. A.; Khan, S. A.; Moseley, S. H.; Shafer, R. A.; Deiker, S.; Grossman, E. N.; Hilton, G. C.; Irwin, K. D.

2004-01-01

The availability of superconducting Transition Edge Sensors (TES) with large numbers of individual detector pixels requires multiplexers for efficient readout. The use of multiplexers reduces the number of wires needed between the cryogenic electronics and the room temperature electronics and cuts the number of required cryogenic amplifiers. We are using an 8 channel SQUID multiplexer to read out one-dimensional TES arrays which are used for submillimeter astronomical observations. We present results from test measurements which show that the low noise level of the SQUID multiplexers allows accurate measurements of the TES Johnson noise, and that in operation, the readout noise is dominated by the detector noise. Multiplexers for large number of channels require a large bandwidth for the multiplexed readout signal. We discuss the resulting implications for the noise performance of these multiplexers which will be used for the readout of two dimensional TES arrays in next generation instruments.

SVGA and XGA active matrix microdisplays for head-mounted applications

NASA Astrophysics Data System (ADS)

Alvelda, Phillip; Bolotski, Michael; Brown, Imani L.

2000-03-01

The MicroDisplay Corporation's liquid crystal on silicon (LCOS) display devices are based on the union of several technologies with the extreme integration capability of conventionally fabricated CMOS substrates. The fast liquid crystal operation modes and new scalable high-performance pixel addressing architectures presented in this paper enable substantially improved color, contrast, and brightness while still satisfying the optical, packaging, and power requirements of portable applications. The entire suite of MicroDisplay's technologies was devised to create a line of mixed-signal application-specific integrated circuits (ASICs) in single-chip display systems. Mixed-signal circuits can integrate computing, memory, and communication circuitry on the same substrate as the display drivers and pixel array for a multifunctional complete system-on-a-chip. System-on-a-chip benefits also include reduced head supported weight requirements through the elimination of off-chip drive electronics.

Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

PubMed Central

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

Cobalt oxide nanosheet and CNT micro carbon monoxide sensor integrated with readout circuit on chip.

PubMed

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.

Triroc: A Multi-Channel SiPM Read-Out ASIC for PET/PET-ToF Application

NASA Astrophysics Data System (ADS)

Ahmad, Salleh; Fleury, Julien; de la Taille, Christophe; Seguin-Moreau, Nathalie; Dulucq, Frederic; Martin-Chassard, Gisele; Callier, Stephane; Thienpont, Damien; Raux, Ludovic

2015-06-01

Triroc is the latest addition to SiPM readout ASICs family developed at Weeroc, a start-up company from the Omega microelectronics group of IN2P3/CNRS. This chip is developed under the framework TRIMAGE European project which is aimed for building a cost effective tri-modal PET/MR/EEG brain scan. To ensure the flexibility and compatibility with any SiPM in the market, the ASIC is designed to be capable of accepting negative and positive polarity input signals. This 64-channel ASIC, is suitable for SiPM readout which requires high accuracy timing and charge measurements. Targeted applications would be PET prototyping with time-of-flight capability. Main features of Triroc includes high dynamic range ADC up to 2500 photoelectrons and TDC fine time binning of 40 ps. Triroc requires very minimal external components which means it is a good contender for compact multichannel PET prototyping. Triroc is designed by using AMS 0.35 μm SiGe technology and it was submitted in March 2014. The detail design of this chip will be presented.

Bioinspired architecture approach for a one-billion transistor smart CMOS camera chip

NASA Astrophysics Data System (ADS)

Fey, Dietmar; Komann, Marcus

2007-05-01

In the paper we present a massively parallel VLSI architecture for future smart CMOS camera chips with up to one billion transistors. To exploit efficiently the potential offered by future micro- or nanoelectronic devices traditional on central structures oriented parallel architectures based on MIMD or SIMD approaches will fail. They require too long and too many global interconnects for the distribution of code or the access to common memory. On the other hand nature developed self-organising and emergent principles to manage successfully complex structures based on lots of interacting simple elements. Therefore we developed a new as Marching Pixels denoted emergent computing paradigm based on a mixture of bio-inspired computing models like cellular automaton and artificial ants. In the paper we present different Marching Pixels algorithms and the corresponding VLSI array architecture. A detailed synthesis result for a 0.18 μm CMOS process shows that a 256×256 pixel image is processed in less than 10 ms assuming a moderate 100 MHz clock rate for the processor array. Future higher integration densities and a 3D chip stacking technology will allow the integration and processing of Mega pixels within the same time since our architecture is fully scalable.

Ground calibration of the spatial response and quantum efficiency of the CdZnTe hard x-ray detectors for NuSTAR

NASA Astrophysics Data System (ADS)

Grefenstette, Brian W.; Bhalerao, Varun; Cook, W. Rick; Harrison, Fiona A.; Kitaguchi, Takao; Madsen, Kristin K.; Mao, Peter H.; Miyasaka, Hiromasa; Rana, Vikram

2017-08-01

Pixelated Cadmium Zinc Telluride (CdZnTe) detectors are currently flying on the Nuclear Spectroscopic Telescope ARray (NuSTAR) NASA Astrophysics Small Explorer. While the pixel pitch of the detectors is ≍ 605 μm, we can leverage the detector readout architecture to determine the interaction location of an individual photon to much higher spatial accuracy. The sub-pixel spatial location allows us to finely oversample the point spread function of the optics and reduces imaging artifacts due to pixelation. In this paper we demonstrate how the sub-pixel information is obtained, how the detectors were calibrated, and provide ground verification of the quantum efficiency of our Monte Carlo model of the detector response.

Lab-on-a-Chip Proteomic Assays for Psychiatric Disorders.

PubMed

Peter, Harald; Wienke, Julia; Guest, Paul C; Bistolas, Nikitas; Bier, Frank F

2017-01-01

Lab-on-a-chip assays allow rapid identification of multiple parameters on an automated user-friendly platform. Here we describe a fully automated multiplex immunoassay and readout in less than 15 min using the Fraunhofer in vitro diagnostics (ivD) platform to enable inexpensive point-of-care profiling of sera or a single drop of blood from patients with various diseases such as psychiatric disorders.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

PubMed Central

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasegawa, S.

The CMS pixel phase-1 upgrade project replaces the current pixel detector with an upgraded system with faster readout electronics during the extended year-end technical stop of 2016/2017. New electronics prototypes for the system have been developed, and tests in a realistic environment for a comprehensive evaluation are needed. A full readout test stand with either the same hardware as used in the current CMS pixel detector or the latest prototypes of upgrade electronics has been built. The setup enables the observation and investigation of a jitter increase in the data line associated with trigger rate increases. This effect is duemore » to the way in which the clock and trigger distribution is implemented in CMS. A new prototype of the electronics with a PLL based on a voltage controlled quartz crystal oscillator (QPLL), which works as jitter filter, in the clock distribution path was produced. With the test stand, it was confirmed that the jitter increase is not seen with the prototype, and also good performance was confirmed at the expected detector operation temperature ($-$20 °C).« less

A high sensitivity 20Mfps CMOS image sensor with readout speed of 1Tpixel/sec for visualization of ultra-high speed phenomena

NASA Astrophysics Data System (ADS)

Kuroda, R.; Sugawa, S.

2017-02-01

Ultra-high speed (UHS) CMOS image sensors with on-chop analog memories placed on the periphery of pixel array for the visualization of UHS phenomena are overviewed in this paper. The developed UHS CMOS image sensors consist of 400H×256V pixels and 128 memories/pixel, and the readout speed of 1Tpixel/sec is obtained, leading to 10 Mfps full resolution video capturing with consecutive 128 frames, and 20 Mfps half resolution video capturing with consecutive 256 frames. The first development model has been employed in the high speed video camera and put in practical use in 2012. By the development of dedicated process technologies, photosensitivity improvement and power consumption reduction were simultaneously achieved, and the performance improved version has been utilized in the commercialized high-speed video camera since 2015 that offers 10 Mfps with ISO16,000 photosensitivity. Due to the improved photosensitivity, clear images can be captured and analyzed even under low light condition, such as under a microscope as well as capturing of UHS light emission phenomena.

Silicon pixel R&D for CLIC

NASA Astrophysics Data System (ADS)

Munker, M.

2017-01-01

Challenging detector requirements are imposed by the physics goals at the future multi-TeV e+ e- Compact Linear Collider (CLIC). A single point resolution of 3 μm for the vertex detector and 7 μm for the tracker is required. Moreover, the CLIC vertex detector and tracker need to be extremely light weighted with a material budget of 0.2% X0 per layer in the vertex detector and 1-2% X0 in the tracker. A fast time slicing of 10 ns is further required to suppress background from beam-beam interactions. A wide range of sensor and readout ASIC technologies are investigated within the CLIC silicon pixel R&D effort. Various hybrid planar sensor assemblies with a pixel size of 25×25 μm2 and 55×55 μm2 have been produced and characterised by laboratory measurements and during test-beam campaigns. Experimental and simulation results for thin (50 μm-500 μm) slim edge and active-edge planar, and High-Voltage CMOS sensors hybridised to various readout ASICs (Timepix, Timepix3, CLICpix) are presented.

Advanced testing of the DEPFET minimatrix particle detector

NASA Astrophysics Data System (ADS)

Andricek, L.; Kodyš, P.; Koffmane, C.; Ninkovic, J.; Oswald, C.; Richter, R.; Ritter, A.; Rummel, S.; Scheirich, J.; Wassatsch, A.

2012-01-01

The DEPFET (DEPleted Field Effect Transistor) is an active pixel particle detector with a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated in each pixel, providing first amplification stage of readout electronics. Excellent signal over noise performance is gained this way. The DEPFET sensor will be used as a vertex detector in the Belle II experiment at SuperKEKB, electron-positron collider in Japan. The vertex detector will be composed of two layers of pixel detectors (DEPFET) and four layers of strip detectors. The DEPFET sensor requires switching and current readout circuits for its operation. These circuits have been designed as ASICs (Application Specific Integrated Circuits) in several different versions, but they provide insufficient flexibility for precise detector testing. Therefore, a test system with a flexible control cycle range and minimal noise has been designed for testing and characterizing of small detector prototypes (Minimatrices). Sensors with different design layouts and thicknesses are produced in order to evaluate and select the one with the best performance for the Belle II application. Description of the test system as well as measurement results are presented.

Smart image sensors: an emerging key technology for advanced optical measurement and microsystems

NASA Astrophysics Data System (ADS)

Seitz, Peter

1996-08-01

Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one 'smart image sensor' or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each 'smart pixel' with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality: Single-chip cameras with on- chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, single-chip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additional compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

GridPix detectors: Production and beam test results

NASA Astrophysics Data System (ADS)

Koppert, W. J. C.; van Bakel, N.; Bilevych, Y.; Colas, P.; Desch, K.; Fransen, M.; van der Graaf, H.; Hartjes, F.; Hessey, N. P.; Kaminski, J.; Schmitz, J.; Schön, R.; Zappon, F.

2013-12-01

The innovative GridPix detector is a Time Projection Chamber (TPC) that is read out with a Timepix-1 pixel chip. By using wafer post-processing techniques an aluminium grid is placed on top of the chip. When operated, the electric field between the grid and the chip is sufficient to create electron induced avalanches which are detected by the pixels. The time-to-digital converter (TDC) records the drift time enabling the reconstruction of high precision 3D track segments. Recently GridPixes were produced on full wafer scale, to meet the demand for more reliable and cheaper devices in large quantities. In a recent beam test the contribution of both diffusion and time walk to the spatial and angular resolutions of a GridPix detector with a 1.2 mm drift gap are studied in detail. In addition long term tests show that in a significant fraction of the chips the protection layer successfully quenches discharges, preventing harm to the chip.

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

DOE PAGES

Kanisauskas, K.; Affolder, A.; Arndt, K.; ...

2017-02-15

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for twomore » active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e – to 386 e – and from 75 e – to 277 e – for the corresponding pixels.« less

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanisauskas, K.; Affolder, A.; Arndt, K.

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for twomore » active pixels on the test chip. As a result, there was also a notable increase in noise levels from 85 e – to 386 e – and from 75 e – to 277 e – for the corresponding pixels.« less

High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

NASA Astrophysics Data System (ADS)

Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

2016-01-01

State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

Performance evaluation of the analogue front-end and ADC prototypes for the Gotthard-II development

NASA Astrophysics Data System (ADS)

Zhang, J.; Andrä, M.; Barten, R.; Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Redford, S.; Ruat, M.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Turcato, M.; Vetter, S.

2017-12-01

Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching pre-amplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to-Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL.EU bunch train will be implemented. Several prototypes with different designs of the analogue front-end (PRE and CDS) and ADC test structures have been fabricated in UMC-110 nm CMOS technology and their performance has been evaluated. In this paper, the performance of the analogue front-end and ADC will be summarized.

NeuroSeek dual-color image processing infrared focal plane array

NASA Astrophysics Data System (ADS)

McCarley, Paul L.; Massie, Mark A.; Baxter, Christopher R.; Huynh, Buu L.

1998-09-01

Several technologies have been developed in recent years to advance the state of the art of IR sensor systems including dual color affordable focal planes, on-focal plane array biologically inspired image and signal processing techniques and spectral sensing techniques. Pacific Advanced Technology (PAT) and the Air Force Research Lab Munitions Directorate have developed a system which incorporates the best of these capabilities into a single device. The 'NeuroSeek' device integrates these technologies into an IR focal plane array (FPA) which combines multicolor Midwave IR/Longwave IR radiometric response with on-focal plane 'smart' neuromorphic analog image processing. The readout and processing integrated circuit very large scale integration chip which was developed under this effort will be hybridized to a dual color detector array to produce the NeuroSeek FPA, which will have the capability to fuse multiple pixel-based sensor inputs directly on the focal plane. Great advantages are afforded by application of massively parallel processing algorithms to image data in the analog domain; the high speed and low power consumption of this device mimic operations performed in the human retina.

The Solid State Image Sensor's Contribution To The Development Of Silicon Technology

NASA Astrophysics Data System (ADS)

Weckler, Gene P.

1985-12-01

Until recently, a solid-state image sensor with full television resolution was a dream. However, the dream of a solid state image sensor has been a driving force in the development of silicon technology for more than twenty-five years. There are probably many in the main stream of semiconductor technology who would argue with this; however, the solid state image sensor was conceived years before the invention of the semi conductor RAM or the microprocessor (i.e., even before the invention of the integrated circuit). No other potential application envisioned at that time required such complexity. How could anyone have ever hoped in 1960 to make a semi conductor chip containing half-a-million picture elements, capable of resolving eight to twelve bits of infornation, and each capable of readout rates in the tens of mega-pixels per second? As early as 1960 arrays of p-n junctions were being investigated as the optical targets in vidicon tubes, replacing the photoconductive targets. It took silicon technology several years to catch up with these dreamers.

The Nano-Patch-Clamp Array: Microfabricated Glass Chips for High-Throughput Electrophysiology

NASA Astrophysics Data System (ADS)

Fertig, Niels

2003-03-01

Electrophysiology (i.e. patch clamping) remains the gold standard for pharmacological testing of putative ion channel active drugs (ICADs), but suffers from low throughput. A new ion channel screening technology based on microfabricated glass chip devices will be presented. The glass chips contain very fine apertures, which are used for whole-cell voltage clamp recordings as well as single channel recordings from mammalian cell lines. Chips containing multiple patch clamp wells will be used in a first bench-top device, which will allow perfusion and electrical readout of each well. This scalable technology will allow for automated, rapid and parallel screening on ion channel drug targets.

A Binary Offset Effect in CCD Readout and Its Impact on Astronomical Data

NASA Astrophysics Data System (ADS)

Boone, K.; Aldering, G.; Copin, Y.; Dixon, S.; Domagalski, R. S.; Gangler, E.; Pecontal, E.; Perlmutter, S.

2018-06-01

We have discovered an anomalous behavior of CCD readout electronics that affects their use in many astronomical applications. An offset in the digitization of the CCD output voltage that depends on the binary encoding of one pixel is added to pixels that are read out one, two, and/or three pixels later. One result of this effect is the introduction of a differential offset in the background when comparing regions with and without flux from science targets. Conventional data reduction methods do not correct for this offset. We find this effect in 16 of 22 instruments investigated, covering a variety of telescopes and many different front-end electronics systems. The affected instruments include LRIS and DEIMOS on the Keck telescopes, WFC3 UVIS and STIS on HST, MegaCam on CFHT, SNIFS on the UH88 telescope, GMOS on the Gemini telescopes, HSC on Subaru, and FORS on VLT. The amplitude of the introduced offset is up to 4.5 ADU per pixel, and it is not directly proportional to the measured ADU level. We have developed a model that can be used to detect this “binary offset effect” in data, and correct for it. Understanding how data are affected and applying a correction for the effect is essential for precise astronomical measurements.

An Efficient, FPGA-Based, Cluster Detection Algorithm Implementation for a Strip Detector Readout System in a Time Projection Chamber Polarimeter

NASA Technical Reports Server (NTRS)

Gregory, Kyle J.; Hill, Joanne E. (Editor); Black, J. Kevin; Baumgartner, Wayne H.; Jahoda, Keith

2016-01-01

A fundamental challenge in a spaceborne application of a gas-based Time Projection Chamber (TPC) for observation of X-ray polarization is handling the large amount of data collected. The TPC polarimeter described uses the APV-25 Application Specific Integrated Circuit (ASIC) to readout a strip detector. Two dimensional photoelectron track images are created with a time projection technique and used to determine the polarization of the incident X-rays. The detector produces a 128x30 pixel image per photon interaction with each pixel registering 12 bits of collected charge. This creates challenging requirements for data storage and downlink bandwidth with only a modest incidence of photons and can have a significant impact on the overall mission cost. An approach is described for locating and isolating the photoelectron track within the detector image, yielding a much smaller data product, typically between 8x8 pixels and 20x20 pixels. This approach is implemented using a Microsemi RT-ProASIC3-3000 Field-Programmable Gate Array (FPGA), clocked at 20 MHz and utilizing 10.7k logic gates (14% of FPGA), 20 Block RAMs (17% of FPGA), and no external RAM. Results will be presented, demonstrating successful photoelectron track cluster detection with minimal impact to detector dead-time.

Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Costen, Nick; Allen, Christine

2007-01-01

This conference poster reviews the Indium hybridization of the large format TES bolometer arrays. We are developing a key technology to enable the next generation of detectors. That is the Hybridization of Large Format Arrays using Indium bonded detector arrays containing 32x40 elements which conforms to the NIST multiplexer readout architecture of 1135 micron pitch. We have fabricated and hybridized mechanical models with the detector chips bonded after being fully back-etched. The mechanical support consists of 30 micron walls between elements Demonstrated electrical continuity for each element. The goal is to hybridize fully functional array of TES detectors to NIST readout.

3D integrated superconducting qubits

NASA Astrophysics Data System (ADS)

Rosenberg, D.; Kim, D.; Das, R.; Yost, D.; Gustavsson, S.; Hover, D.; Krantz, P.; Melville, A.; Racz, L.; Samach, G. O.; Weber, S. J.; Yan, F.; Yoder, J. L.; Kerman, A. J.; Oliver, W. D.

2017-10-01

As the field of quantum computing advances from the few-qubit stage to larger-scale processors, qubit addressability and extensibility will necessitate the use of 3D integration and packaging. While 3D integration is well-developed for commercial electronics, relatively little work has been performed to determine its compatibility with high-coherence solid-state qubits. Of particular concern, qubit coherence times can be suppressed by the requisite processing steps and close proximity of another chip. In this work, we use a flip-chip process to bond a chip with superconducting flux qubits to another chip containing structures for qubit readout and control. We demonstrate that high qubit coherence (T1, T2,echo > 20 μs) is maintained in a flip-chip geometry in the presence of galvanic, capacitive, and inductive coupling between the chips.

Performance of 20:1 multiplexer for large area charge readouts in directional dark matter TPC detectors

NASA Astrophysics Data System (ADS)

Ezeribe, A. C.; Robinson, M.; Robinson, N.; Scarff, A.; Spooner, N. J. C.; Yuriev, L.

2018-02-01

More target mass is required in current TPC based directional dark matter detectors for improved detector sensitivity. This can be achieved by scaling up the detector volumes, but this results in the need for more analogue signal channels. A possible solution to reducing the overall cost of the charge readout electronics is to multiplex the signal readout channels. Here, we present a multiplexer system in expanded mode based on LMH6574 chips produced by Texas Instruments, originally designed for video processing. The setup has a capability of reducing the number of readouts in such TPC detectors by a factor of 20. Results indicate that the important charge distribution asymmetry along an ionization track is retained after multiplexed signals are demultiplexed.

Advanced processing of CdTe pixel radiation detectors

NASA Astrophysics Data System (ADS)

Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

2017-12-01

We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

A time-resolved image sensor for tubeless streak cameras

NASA Astrophysics Data System (ADS)

Yasutomi, Keita; Han, SangMan; Seo, Min-Woong; Takasawa, Taishi; Kagawa, Keiichiro; Kawahito, Shoji

2014-03-01

This paper presents a time-resolved CMOS image sensor with draining-only modulation (DOM) pixels for tube-less streak cameras. Although the conventional streak camera has high time resolution, the device requires high voltage and bulky system due to the structure with a vacuum tube. The proposed time-resolved imager with a simple optics realize a streak camera without any vacuum tubes. The proposed image sensor has DOM pixels, a delay-based pulse generator, and a readout circuitry. The delay-based pulse generator in combination with an in-pixel logic allows us to create and to provide a short gating clock to the pixel array. A prototype time-resolved CMOS image sensor with the proposed pixel is designed and implemented using 0.11um CMOS image sensor technology. The image array has 30(Vertical) x 128(Memory length) pixels with the pixel pitch of 22.4um. .

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

NASA Technical Reports Server (NTRS)

Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl J.; Reed, Robert; Pickel, Jim; Kniffin, Scott

2002-01-01

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

Large area thinned planar sensors for future high-luminosity-LHC upgrades

NASA Astrophysics Data System (ADS)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-12-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

A GaAs pixel detectors-based digital mammographic system: Performances and imaging tests results

NASA Astrophysics Data System (ADS)

Annovazzi, A.; Amendolia, S. R.; Bigongiari, A.; Bisogni, M. G.; Catarsi, F.; Cesqui, F.; Cetronio, A.; Colombo, F.; Delogu, P.; Fantacci, M. E.; Gilberti, A.; Lanzieri, C.; Lavagna, S.; Novelli, M.; Passuello, G.; Paternoster, G.; Pieracci, M.; Poletti, M.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Testa, A.; Venturelli, L.

2007-06-01

The prototype presented in this paper is based on GaAs pixel detectors read-out by the PCC/MEDIPIX I circuit. The active area of a sensor is about 1 cm 2 therefore to cover the typical irradiation field used in mammography (18×24 cm 2), 18 GaAs detection units have been organized in two staggered rows of nine chips each and moved by a stepper motor in the orthogonal direction. The system is integrated in a mammographic equipment which comprehends the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the Integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies, Alenia Marconi Systems (AMS), CAEN, Gilardoni, LABEN and Poli.Hi.Tech., in collaboration with the universities of Ferrara, Roma "La Sapienza", Pisa and the Istituto Nazionale di Fisica Nucleare (INFN). In this paper, we report on the electrical characterization and the first imaging test results of the digital mammographic system. To assess the imaging capability of such a detector we have built a phantom, which simulates the breast tissue with malignancies. The radiographs of the phantom, obtained by delivering an entrance dose of 4.8 mGy, have shown particulars with a measured contrast below 1%.

LSST camera readout chip ASPIC: test tools

NASA Astrophysics Data System (ADS)

Antilogus, P.; Bailly, Ph; Jeglot, J.; Juramy, C.; Lebbolo, H.; Martin, D.; Moniez, M.; Tocut, V.; Wicek, F.

2012-02-01

The LSST camera will have more than 3000 video-processing channels. The readout of this large focal plane requires a very compact readout chain. The correlated ''Double Sampling technique'', which is generally used for the signal readout of CCDs, is also adopted for this application and implemented with the so called ''Dual Slope integrator'' method. We have designed and implemented an ASIC for LSST: the Analog Signal Processing asIC (ASPIC). The goal is to amplify the signal close to the output, in order to maximize signal to noise ratio, and to send differential outputs to the digitization. Others requirements are that each chip should process the output of half a CCD, that is 8 channels and should operate at 173 K. A specific Back End board has been designed especially for lab test purposes. It manages the clock signals, digitizes the analog differentials outputs of ASPIC and stores data into a memory. It contains 8 ADCs (18 bits), 512 kwords memory and an USB interface. An FPGA manages all signals from/to all components on board and generates the timing sequence for ASPIC. Its firmware is written in Verilog and VHDL languages. Internals registers permit to define various tests parameters of the ASPIC. A Labview GUI allows to load or update these registers and to check a proper operation. Several series of tests, including linearity, noise and crosstalk, have been performed over the past year to characterize the ASPIC at room and cold temperature. At present, the ASPIC, Back-End board and CCD detectors are being integrated to perform a characterization of the whole readout chain.

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

NASA Astrophysics Data System (ADS)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (< 10 μm), to handle large particle occupancy, and to require a small fraction of the number of electronic channels of an equivalent pixel detector. The Silicon Vertex Tracker (SVT) for the STAR experiment at RHIC is based on this new technology. The SVT will consist of 216 SDD's, each 6.3 cm by 6.3 cm, arranged in a three layer barrel design, covering 2 π in azimuth and ±1 in pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Simultaneous electrical recording of cardiac electrophysiology and contraction on chip

DOE PAGES

Qian, Fang; Huang, Chao; Lin, Yi-Dong; ...

2017-04-18

Prevailing commercialized cardiac platforms for in vitro drug development utilize planar microelectrode arrays to map action potentials, or impedance sensing to record contraction in real time, but cannot record both functions on the same chip with high spatial resolution. We report a novel cardiac platform that can record cardiac tissue adhesion, electrophysiology, and contractility on the same chip. The platform integrates two independent yet interpenetrating sensor arrays: a microelectrode array for field potential readouts and an interdigitated electrode array for impedance readouts. Together, these arrays provide real-time, non-invasive data acquisition of both cardiac electrophysiology and contractility under physiological conditions andmore » under drug stimuli. Furthermore, we cultured human induced pluripotent stem cell-derived cardiomyocytes as a model system, and used to validate the platform with an excitation–contraction decoupling chemical. Preliminary data using the platform to investigate the effect of the drug norepinephrine are combined with computational efforts. Finally, this platform provides a quantitative and predictive assay system that can potentially be used for comprehensive assessment of cardiac toxicity earlier in the drug discovery process.« less

Simultaneous electrical recording of cardiac electrophysiology and contraction on chip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, Fang; Huang, Chao; Lin, Yi-Dong

Prevailing commercialized cardiac platforms for in vitro drug development utilize planar microelectrode arrays to map action potentials, or impedance sensing to record contraction in real time, but cannot record both functions on the same chip with high spatial resolution. We report a novel cardiac platform that can record cardiac tissue adhesion, electrophysiology, and contractility on the same chip. The platform integrates two independent yet interpenetrating sensor arrays: a microelectrode array for field potential readouts and an interdigitated electrode array for impedance readouts. Together, these arrays provide real-time, non-invasive data acquisition of both cardiac electrophysiology and contractility under physiological conditions andmore » under drug stimuli. Furthermore, we cultured human induced pluripotent stem cell-derived cardiomyocytes as a model system, and used to validate the platform with an excitation–contraction decoupling chemical. Preliminary data using the platform to investigate the effect of the drug norepinephrine are combined with computational efforts. Finally, this platform provides a quantitative and predictive assay system that can potentially be used for comprehensive assessment of cardiac toxicity earlier in the drug discovery process.« less

The phase 1 upgrade of the CMS Pixel Front-End Driver

NASA Astrophysics Data System (ADS)

Friedl, M.; Pernicka, M.; Steininger, H.

2010-12-01

The pixel detector of the CMS experiment at the LHC is read out by analog optical links, sending the data to 9U VME Front-End Driver (FED) boards located in the electronics cavern. There are plans for the phase 1 upgrade of the pixel detector (2016) to add one more layer, while significantly cutting down the overall material budget. At the same time, the optical data transmission will be replaced by a serialized digital scheme. A plug-in board solution with a high-speed digital optical receiver has been developed for the Pixel-FED readout boards and will be presented along with first tests of the future optical link.

Geometric correction methods for Timepix based large area detectors

NASA Astrophysics Data System (ADS)

Zemlicka, J.; Dudak, J.; Karch, J.; Krejci, F.

2017-01-01

X-ray micro radiography with the hybrid pixel detectors provides versatile tool for the object inspection in various fields of science. It has proven itself especially suitable for the samples with low intrinsic attenuation contrast (e.g. soft tissue in biology, plastics in material sciences, thin paint layers in cultural heritage, etc.). The limited size of single Medipix type detector (1.96 cm2) was recently overcome by the construction of large area detectors WidePIX assembled of Timepix chips equipped with edgeless silicon sensors. The largest already built device consists of 100 chips and provides fully sensitive area of 14.3 × 14.3 cm2 without any physical gaps between sensors. The pixel resolution of this device is 2560 × 2560 pixels (6.5 Mpix). The unique modular detector layout requires special processing of acquired data to avoid occurring image distortions. It is necessary to use several geometric compensations after standard corrections methods typical for this type of pixel detectors (i.e. flat-field, beam hardening correction). The proposed geometric compensations cover both concept features and particular detector assembly misalignment of individual chip rows of large area detectors based on Timepix assemblies. The former deals with larger border pixels in individual edgeless sensors and their behaviour while the latter grapple with shifts, tilts and steps between detector rows. The real position of all pixels is defined in Cartesian coordinate system and together with non-binary reliability mask it is used for the final image interpolation. The results of geometric corrections for test wire phantoms and paleo botanic material are presented in this article.

MAROC, a generic photomultiplier readout chip

NASA Astrophysics Data System (ADS)

Blin, S.; Barrillon, P.; de La Taille, C.

2010-12-01

The MAROC ASICs family is dedicated to the readout of 64-channel Multi Anode PMT and similar detectors. Its main roles are to correct the gain spread of MAPMT channels thanks to an individual variable gain preamplifier and to discriminate the input signals (from 50fC i.e 1/3 photo-electron) in order to produce 64 trigger outputs. A multiplexed analog charge output is also available with a dynamic range around 10 pe ( ~ 1.6 pC) and a 12 bit Wilkinson ADC is embedded. Three versions of this chip have been submitted. MAROC 2 is the production version for the ATLAS luminometer and MAROC3 is a version with lower dissipation and significant improvements concerning the charge (30 pe: ~ 5 pC) and trigger (discrimination from 10fC). This third version showed very good characteristics that are presented here.

Nanophotonic rare-earth quantum memory with optically controlled retrieval.

PubMed

Zhong, Tian; Kindem, Jonathan M; Bartholomew, John G; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D; Beyer, Andrew D; Faraon, Andrei

2017-09-29

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Towards Silicon-Based Longwave Integrated Optoelectronics (LIO)

DTIC Science & Technology

2008-01-21

circuitry. The photonics can use, for example, microbolometers and III-V photodetectors as well as III-V interband cascade and quantum cascade lasers...chips using inputs from several sensors. (4) imaging: focal - plane - array imager with integral readout, infrared-to-visible image converter chip, (5... photodetectors , type II interband cascades and QCLs. I would integrate the cascades in LIO using a technique similar to that developed by John Bower’s

Maximizing Computational Capability with Minimal Power

DTIC Science & Technology

2009-03-01

Chip -Scale Energy and Power... and Heat Report Documentation Page Form ApprovedOMB No. 0704-0188 Public reporting burden for the collection of...OpticalBench Mounting Posts Imager Chip LCDinterfaced withthecomputer P o l a r i z e r P o l a r i z e r XYZ Translator Optical Slide VMM Computational Pixel...Signal routing power / memory: ? Power does not include comm off chip (i.e. accessing memory) Power = ½ C Vdd2 f for CMOS Chip to Chip (10pF load min

Fast, High-Precision Readout Circuit for Detector Arrays

NASA Technical Reports Server (NTRS)

Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.

2013-01-01

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Three-dimensional Imaging for Large LArTPCs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, C.; Qian, X.; Viren, B.

2017-12-14

High-performance event reconstruction is critical for current and future massive liquid argon time projection chambers (LArTPCs) to realize their full scientic potential. LArTPCs with readout using wire planes provides a limited number of 2D projections. In general, without a pixel-type readout it is challenging to achieve unambiguous 3D event reconstruction. As a remedy, we present a novel 3D imaging method, Wire-Cell, which incorporates the charge and sparsity information in addition to the time and geometry through simple and robust mathematics.

The DCU: the detector control unit for SPICA-SAFARI

NASA Astrophysics Data System (ADS)

Clénet, Antoine; Ravera, Laurent; Bertrand, Bernard; den Hartog, Roland H.; Jackson, Brian D.; van Leeuven, Bert-Joost; van Loon, Dennis; Parot, Yann; Pointecouteau, Etienne; Sournac, Anthony

2014-08-01

IRAP is developing the warm electronic, so called Detector Control Unit" (DCU), in charge of the readout of the SPICA-SAFARI's TES type detectors. The architecture of the electronics used to readout the 3 500 sensors of the 3 focal plane arrays is based on the frequency domain multiplexing technique (FDM). In each of the 24 detection channels the data of up to 160 pixels are multiplexed in frequency domain between 1 and 3:3 MHz. The DCU provides the AC signals to voltage-bias the detectors; it demodulates the detectors data which are readout in the cold by a SQUID; and it computes a feedback signal for the SQUID to linearize the detection chain in order to optimize its dynamic range. The feedback is computed with a specific technique, so called baseband feedback (BBFB) which ensures that the loop is stable even with long propagation and processing delays (i.e. several µs) and with fast signals (i.e. frequency carriers at 3:3 MHz). This digital signal processing is complex and has to be done at the same time for the 3 500 pixels. It thus requires an optimisation of the power consumption. We took the advantage of the relatively reduced science signal bandwidth (i.e. 20 - 40 Hz) to decouple the signal sampling frequency (10 MHz) and the data processing rate. Thanks to this method we managed to reduce the total number of operations per second and thus the power consumption of the digital processing circuit by a factor of 10. Moreover we used time multiplexing techniques to share the resources of the circuit (e.g. a single BBFB module processes 32 pixels). The current version of the firmware is under validation in a Xilinx Virtex 5 FPGA, the final version will be developed in a space qualified digital ASIC. Beyond the firmware architecture the optimization of the instrument concerns the characterization routines and the definition of the optimal parameters. Indeed the operation of the detection and readout chains requires to properly define more than 17 500 parameters (about 5 parameters per pixel). Thus it is mandatory to work out an automatic procedure to set up these optimal values. We defined a fast algorithm which characterizes the phase correction to be applied by the BBFB firmware and the pixel resonance frequencies. We also defined a technique to define the AC-carrier initial phases in such a way that the amplitude of their sum is minimized (for a better use of the DAC dynamic range).

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

SiPM based readout system for PbWO4 crystals

NASA Astrophysics Data System (ADS)

Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

2013-08-01

Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20-100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

A multichannel compact readout system for single photon detection: Design and performances

NASA Astrophysics Data System (ADS)

Argentieri, A. G.; Cisbani, E.; Colilli, S.; Cusanno, F.; De Leo, R.; Fratoni, R.; Garibaldi, F.; Giuliani, F.; Gricia, M.; Lucentini, M.; Marra, M.; Musico, Paolo; Santavenere, F.; Torrioli, S.

2010-05-01

Optimal exploitation of Multi Anode PhotoMultiplier Tubes (MAPMT) as imaging devices requires the acquisition of a large number of independent channels; despite the rather wide demand, on-the-shelf electronics for this purpose does not exist. A compact independent channel readout system for an array of MAPMTs has been developed and tested [1,2]. The system can handle up to 4096 independent channels, covering an area of about 20×20 cm2 with pixel size of 3×3 mm2, using Hamamatsu H-9500 devices. The front-end is based on a 64 channels VLSI custom chip called MAROC, developed by IN2P3 Orsay (France) group, controlled by means of a Field Programmable Gate Array (FPGA) which implements configuration, triggering and data conversion controls. Up to 64 front-end cards can be housed in four backplanes and a central unit collects data from all of them, communicating with a control Personal Computer (PC) using an high speed USB 2.0 connection. A complete system has been built and tested. Eight Flat MAPMTs (256 anodes Hamamatsu H-9500) have been arranged on a boundary of a 3×3 matrix for a grand total of 2048 channels. This detector has been used to verify the performances of a focusing aerogel RICH prototype using an electron beam at the Frascati (Rome) INFN National Laboratory Beam Test Facility (BTF) during the last week of January 2009. Data analysis is ongoing: the first results are encouraging, showing that the Cherenkov rings are well identified by this system.

High-efficiency dynamic routing architecture for the readout of single photon avalanche diode arrays in time-correlated measurements

NASA Astrophysics Data System (ADS)

Cominelli, A.; Acconcia, G.; Peronio, P.; Rech, I.; Ghioni, M.

2017-05-01

In recent years, the Time-Correlated Single Photon Counting (TCSPC) technique has gained a prominent role in many fields, where the analysis of extremely fast and faint luminous signals is required. In the life science, for instance, the estimation of fluorescence time-constants with picosecond accuracy has been leading to a deeper insight into many biological processes. Although the many advantages provided by TCSPC-based techniques, their intrinsically repetitive nature leads to a relatively long acquisition time, especially when time-resolved images are obtained by means of a single detector, along with a scanning point system. In the last decade, TCSPC acquisition systems have been subjected to a fast trend towards the parallelization of many independent channels, in order to speed up the measure. On one hand, some high-performance multi-module systems have been already made commercially available, but high area and power consumption of each module have limited the number of channels to only some units. On the other hand, many compact systems based on Single Photon Avalanche Diodes (SPAD) have been proposed in literature, featuring thousands of independent acquisition chains on a single chip. The integration of both detectors and conversion electronic in the same pixel area, though, has imposed tight constraints on power dissipation and area occupation of the electronics, resulting in a tradeoff with performance, both in terms of differential nonlinearity and timing jitter. Furthermore, in the ideal case of simultaneous readout of a huge number of channels, the overall data rate can be as high as 100 Gbit/s, which is nowadays too high to be easily processed in real time by a PC. Typical adopted solutions involve an arbitrary dwell time, followed by a sequential readout of the converters, thus limiting the maximum operating frequency of each channel and impairing the measurement speed, which still lies well below the limit imposed by the saturation of the transfer rate towards the elaboration unit. We developed a novel readout architecture, starting from a completely different perspective: considering the maximum data rate we can manage with a PC, a limited set of conversion data is selected and transferred to the elaboration unit during each excitation period, in order to take full advantage of the bus bandwidth toward the PC. In particular, we introduce a smart routing logic, able to dynamically connect a large number of SPAD detectors to a limited set of high-performance external acquisition chains, paving the way for a more efficient use of resources and allowing us to effectively break the tradeoff between integration and performance, which affects the solutions proposed so far. The routing electronic features a pixelated architecture, while 3D-stacking techniques are exploited to connect each SPAD to its dedicated electronic, leading to a minimization of the overall number of interconnections crossing the integrated system, which is one of the main issues in high-density arrays.

High responsivity CMOS imager pixel implemented in SOI technology

NASA Technical Reports Server (NTRS)

Zheng, X.; Wrigley, C.; Yang, G.; Pain, B.

2000-01-01

Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

Three-dimensional cross point readout detector design for including depth information

NASA Astrophysics Data System (ADS)

Lee, Seung-Jae; Baek, Cheol-Ha

2018-04-01

We designed a depth-encoding positron emission tomography (PET) detector using a cross point readout method with wavelength-shifting (WLS) fibers. To evaluate the characteristics of the novel detector module and the PET system, we used the DETECT2000 to perform optical photon transport in the crystal array. The GATE was also used. The detector module is made up of four layers of scintillator arrays, the five layers of WLS fiber arrays, and two sensor arrays. The WLS fiber arrays in each layer cross each other to transport light to each sensor array. The two sensor arrays are coupled to the forward and left sides of the WLS fiber array, respectively. The identification of three-dimensional pixels was determined using a digital positioning algorithm. All pixels were well decoded, with the system resolution ranging from 2.11 mm to 2.29 mm at full width at half maximum (FWHM).

TES-Based X-Ray Microcalorimeter Performances Under AC Bias and FDM for Athena

NASA Technical Reports Server (NTRS)

Akamatsu, H.; Gottardi, L.; de Vries, C. P.; Adams, J. S.; Bandler, S. R.; Bruijn, M. P.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Gao, J. R.;

Cryogenic readout for multiple VUV4 Multi-Pixel Photon Counters in liquid xenon

NASA Astrophysics Data System (ADS)

Arneodo, F.; Benabderrahmane, M. L.; Bruno, G.; Conicella, V.; Di Giovanni, A.; Fawwaz, O.; Messina, M.; Candela, A.; Franchi, G.

2018-06-01

We present the performances and characterization of an array made of S13370-3050CN (VUV4 generation) Multi-Pixel Photon Counters manufactured by Hamamatsu and equipped with a low power consumption preamplifier operating at liquid xenon temperature (∼ 175 K). The electronics is designed for the readout of a matrix of maximum dimension of 8 × 8 individual photosensors and it is based on a single operational amplifier. The detector prototype presented in this paper utilizes the Analog Devices AD8011 current feedback operational amplifier, but other models can be used depending on the application. A biasing correction circuit has been implemented for the gain equalization of photosensors operating at different voltages. The results show single photon detection capability making this device a promising choice for future generation of large scale dark matter detectors based on liquid xenon, such as DARWIN.

Laser doppler blood flow imaging using a CMOS imaging sensor with on-chip signal processing.

PubMed

He, Diwei; Nguyen, Hoang C; Hayes-Gill, Barrie R; Zhu, Yiqun; Crowe, John A; Gill, Cally; Clough, Geraldine F; Morgan, Stephen P

2013-09-18

The first fully integrated 2D CMOS imaging sensor with on-chip signal processing for applications in laser Doppler blood flow (LDBF) imaging has been designed and tested. To obtain a space efficient design over 64 × 64 pixels means that standard processing electronics used off-chip cannot be implemented. Therefore the analog signal processing at each pixel is a tailored design for LDBF signals with balanced optimization for signal-to-noise ratio and silicon area. This custom made sensor offers key advantages over conventional sensors, viz. the analog signal processing at the pixel level carries out signal normalization; the AC amplification in combination with an anti-aliasing filter allows analog-to-digital conversion with a low number of bits; low resource implementation of the digital processor enables on-chip processing and the data bottleneck that exists between the detector and processing electronics has been overcome. The sensor demonstrates good agreement with simulation at each design stage. The measured optical performance of the sensor is demonstrated using modulated light signals and in vivo blood flow experiments. Images showing blood flow changes with arterial occlusion and an inflammatory response to a histamine skin-prick demonstrate that the sensor array is capable of detecting blood flow signals from tissue.

A 256×256 low-light-level CMOS imaging sensor with digital CDS

NASA Astrophysics Data System (ADS)

Zou, Mei; Chen, Nan; Zhong, Shengyou; Li, Zhengfen; Zhang, Jicun; Yao, Li-bin

2016-10-01

In order to achieve high sensitivity for low-light-level CMOS image sensors (CIS), a capacitive transimpedance amplifier (CTIA) pixel circuit with a small integration capacitor is used. As the pixel and the column area are highly constrained, it is difficult to achieve analog correlated double sampling (CDS) to remove the noise for low-light-level CIS. So a digital CDS is adopted, which realizes the subtraction algorithm between the reset signal and pixel signal off-chip. The pixel reset noise and part of the column fixed-pattern noise (FPN) can be greatly reduced. A 256×256 CIS with CTIA array and digital CDS is implemented in the 0.35μm CMOS technology. The chip size is 7.7mm×6.75mm, and the pixel size is 15μm×15μm with a fill factor of 20.6%. The measured pixel noise is 24LSB with digital CDS in RMS value at dark condition, which shows 7.8× reduction compared to the image sensor without digital CDS. Running at 7fps, this low-light-level CIS can capture recognizable images with the illumination down to 0.1lux.

A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

NASA Astrophysics Data System (ADS)

Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

2016-09-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

NASA Technical Reports Server (NTRS)

Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

2016-01-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

A new high dynamic range ROIC with smart light intensity control unit

NASA Astrophysics Data System (ADS)

Yazici, Melik; Ceylan, Omer; Shafique, Atia; Abbasi, Shahbaz; Galioglu, Arman; Gurbuz, Yasar

2017-05-01

This journal presents a new high dynamic range ROIC with smart pixel which consists of two pre-amplifiers that are controlled by a circuit inside the pixel. Each pixel automatically decides which pre-amplifier is used according to the incoming illumination level. Instead of using single pre-amplifier, two input pre-amplifiers, which are optimized for different signal levels, are placed inside each pixel. The smart circuit mechanism, which decides the best input circuit according to the incoming light level, is also designed for each pixel. In short, an individual pixel has the ability to select the best input amplifier circuit that performs the best/highest SNR for the incoming signal level. A 32 × 32 ROIC prototype chip is designed to demonstrate the concept in 0.18 μ m CMOS technology. The prototype is optimized for NIR and SWIR bands. Instead of a detector, process variation optimized current sources are placed inside the ROIC. The chip achieves minimum 8.6 e- input referred noise and 98.9 dB dynamic range. It has the highest dynamic range in the literature in terms of analog ROICs for SWIR band. It is operating in room temperature and power consumption is 2.8 μ W per pixel.

Highly multiplexed signal readout for a time-of-flight positron emission tomography detector based on silicon photomultipliers.

PubMed

Cates, Joshua W; Bieniosek, Matthew F; Levin, Craig S

2017-01-01

Maintaining excellent timing resolution in the generation of silicon photomultiplier (SiPM)-based time-of-flight positron emission tomography (TOF-PET) systems requires a large number of high-speed, high-bandwidth electronic channels and components. To minimize the cost and complexity of a system's back-end architecture and data acquisition, many analog signals are often multiplexed to fewer channels using techniques that encode timing, energy, and position information. With progress in the development SiPMs having lower dark noise, after pulsing, and cross talk along with higher photodetection efficiency, a coincidence timing resolution (CTR) well below 200 ps FWHM is now easily achievable in single pixel, bench-top setups using 20-mm length, lutetium-based inorganic scintillators. However, multiplexing the output of many SiPMs to a single channel will significantly degrade CTR without appropriate signal processing. We test the performance of a PET detector readout concept that multiplexes 16 SiPMs to two channels. One channel provides timing information with fast comparators, and the second channel encodes both position and energy information in a time-over-threshold-based pulse sequence. This multiplexing readout concept was constructed with discrete components to process signals from a [Formula: see text] array of SensL MicroFC-30035 SiPMs coupled to [Formula: see text] Lu 1.8 Gd 0.2 SiO 5 (LGSO):Ce (0.025 mol. %) scintillators. This readout method yielded a calibrated, global energy resolution of 15.3% FWHM at 511 keV with a CTR of [Formula: see text] FWHM between the 16-pixel multiplexed detector array and a [Formula: see text] LGSO-SiPM reference detector. In summary, results indicate this multiplexing scheme is a scalable readout technique that provides excellent coincidence timing performance.

Tilt-effect of holograms and images displayed on a spatial light modulator.

PubMed

Harm, Walter; Roider, Clemens; Bernet, Stefan; Ritsch-Marte, Monika

2015-11-16

We show that a liquid crystal spatial light modulator (LCOS-SLM) can be used to display amplitude images, or phase holograms, which change in a pre-determined way when the display is tilted, i.e. observed under different angles. This is similar to the tilt-effect (also called "latent image effect") known from various security elements ("kinegrams") on credit cards or bank notes. The effect is achieved without any specialized optical components, simply by using the large phase shifting capability of a "thick" SLM, which extends over several multiples of 2π, in combination with the angular dependence of the phase shift. For hologram projection one can use the fact that the phase of a monochromatic wave is only defined modulo 2π. Thus one can design a phase pattern extending over several multiples of 2π, which transforms at different readout angles into different 2π-wrapped phase structures, due to the angular dependence of the modulo 2π operation. These different beams then project different holograms at the respective readout angles. In amplitude modulation mode (with inserted polarizer) the intensity of each SLM pixel oscillates over several periods when tuning its control voltage. Since the oscillation period depends on the readout angle, it is possible to find a certain control voltage which produces two (or more) selectable gray levels at a corresponding number of pre-determined readout angles. This is done with all SLM pixels individually, thus constructing different images for the selected angles. We experimentally demonstrate the reconstruction of multiple (Fourier- and Fresnel-) holograms, and of different amplitude images, by readout of static diffractive patterns in a variable angular range between 0° and 60°.

A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

2015-01-01

The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

Readout and trigger for the AFP detector at ATLAS experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kocian, M.

AFP, the ATLAS Forward Proton consists of silicon detectors at 205 m and 217 m on each side of ATLAS. In 2016 two detectors in one side were installed. The FEI4 chips are read at 160 Mbps over the optical fibers. The DAQ system uses a FPGA board with Artix chip and a mezzanine card with RCE data processing module based on a Zynq chip with ARM processor running ArchLinux. Finally, in this paper we give an overview of the AFP detector with the commissioning steps taken to integrate with the ATLAS TDAQ. Furthermore first performance results are presented.