CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

A CMOS active pixel sensor for retinal stimulation

NASA Astrophysics Data System (ADS)

Prydderch, Mark L.; French, Marcus J.; Mathieson, Keith; Adams, Christopher; Gunning, Deborah; Laudanski, Jonathan; Morrison, James D.; Moodie, Alan R.; Sinclair, James

2006-02-01

Degenerative photoreceptor diseases, such as age-related macular degeneration and retinitis pigmentosa, are the most common causes of blindness in the western world. A potential cure is to use a microelectronic retinal prosthesis to provide electrical stimulation to the remaining healthy retinal cells. We describe a prototype CMOS Active Pixel Sensor capable of detecting a visual scene and translating it into a train of electrical pulses for stimulation of the retina. The sensor consists of a 10 x 10 array of 100 micron square pixels fabricated on a 0.35 micron CMOS process. Light incident upon each pixel is converted into output current pulse trains with a frequency related to the light intensity. These outputs are connected to a biocompatible microelectrode array for contact to the retinal cells. The flexible design allows experimentation with signal amplitudes and frequencies in order to determine the most appropriate stimulus for the retina. Neural processing in the retina can be studied by using the sensor in conjunction with a Field Programmable Gate Array (FPGA) programmed to behave as a neural network. The sensor has been integrated into a test system designed for studying retinal response. We present the most recent results obtained from this sensor.

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Reduced signal crosstalk multi neurotransmitter image sensor by microhole array structure

NASA Astrophysics Data System (ADS)

Ogaeri, Yuta; Lee, You-Na; Mitsudome, Masato; Iwata, Tatsuya; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-06-01

A microhole array structure combined with an enzyme immobilization method using magnetic beads can enhance the target discernment capability of a multi neurotransmitter image sensor. Here we report the fabrication and evaluation of the H+-diffusion-preventing capability of the sensor with the array structure. The structure with an SU-8 photoresist has holes with a size of 24.5 × 31.6 µm2. Sensors were prepared with the array structure of three different heights: 0, 15, and 60 µm. When the sensor has the structure of 60 µm height, 48% reduced output voltage is measured at a H+-sensitive null pixel that is located 75 µm from the acetylcholinesterase (AChE)-immobilized pixel, which is the starting point of H+ diffusion. The suppressed H+ immigration is shown in a two-dimensional (2D) image in real time. The sensor parameters, such as height of the array structure and measuring time, are optimized experimentally. The sensor is expected to effectively distinguish various neurotransmitters in biological samples.

X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

NASA Astrophysics Data System (ADS)

Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

2018-01-01

We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

Fabrication of Transition Edge Sensor Microcalorimeters for X-Ray Focal Planes

NASA Technical Reports Server (NTRS)

Chervenak, James A.; Adams, Joseph S.; Audley, Heather; Bandler, Simon R.; Betancourt-Martinez, Gabriele; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline; Lee, Sang Jun;

Integrated sensor with frame memory and programmable resolution for light adaptive imaging

NASA Technical Reports Server (NTRS)

Zhou, Zhimin (Inventor); Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

2004-01-01

An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

A programmable computational image sensor for high-speed vision

NASA Astrophysics Data System (ADS)

Yang, Jie; Shi, Cong; Long, Xitian; Wu, Nanjian

2013-08-01

In this paper we present a programmable computational image sensor for high-speed vision. This computational image sensor contains four main blocks: an image pixel array, a massively parallel processing element (PE) array, a row processor (RP) array and a RISC core. The pixel-parallel PE is responsible for transferring, storing and processing image raw data in a SIMD fashion with its own programming language. The RPs are one dimensional array of simplified RISC cores, it can carry out complex arithmetic and logic operations. The PE array and RP array can finish great amount of computation with few instruction cycles and therefore satisfy the low- and middle-level high-speed image processing requirement. The RISC core controls the whole system operation and finishes some high-level image processing algorithms. We utilize a simplified AHB bus as the system bus to connect our major components. Programming language and corresponding tool chain for this computational image sensor are also developed.

Contact CMOS imaging of gaseous oxygen sensor array

PubMed Central

Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

2014-01-01

We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

Contact CMOS imaging of gaseous oxygen sensor array.

PubMed

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

A 4MP high-dynamic-range, low-noise CMOS image sensor

NASA Astrophysics Data System (ADS)

Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

2015-03-01

In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame,more » in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.« less

Scientific grade CCDs from EG & G Reticon

NASA Technical Reports Server (NTRS)

Cizdziel, Philip J.

1990-01-01

The design and performance of three scientific grade CCDs are summarized: a 1200 x 400 astronomical array of 27 x 27 sq micron pixels, a 512 x 512 scientific array of 27 x 27 sq micron pixels and a 404 x 64 VNIR array of 52 x 52 sq micron pixels. Each of the arrays is fabricated using a four phase, double poly, buried n-channel, multi-pinned phase CCD process. Performance data for each sensor is presented.

Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

NASA Astrophysics Data System (ADS)

Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

2002-02-01

We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Three-dimensional cross point readout detector design for including depth information

NASA Astrophysics Data System (ADS)

Lee, Seung-Jae; Baek, Cheol-Ha

2018-04-01

We designed a depth-encoding positron emission tomography (PET) detector using a cross point readout method with wavelength-shifting (WLS) fibers. To evaluate the characteristics of the novel detector module and the PET system, we used the DETECT2000 to perform optical photon transport in the crystal array. The GATE was also used. The detector module is made up of four layers of scintillator arrays, the five layers of WLS fiber arrays, and two sensor arrays. The WLS fiber arrays in each layer cross each other to transport light to each sensor array. The two sensor arrays are coupled to the forward and left sides of the WLS fiber array, respectively. The identification of three-dimensional pixels was determined using a digital positioning algorithm. All pixels were well decoded, with the system resolution ranging from 2.11 mm to 2.29 mm at full width at half maximum (FWHM).

The CAOS camera platform: ushering in a paradigm change in extreme dynamic range imager design

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.

2017-02-01

Multi-pixel imaging devices such as CCD, CMOS and Focal Plane Array (FPA) photo-sensors dominate the imaging world. These Photo-Detector Array (PDA) devices certainly have their merits including increasingly high pixel counts and shrinking pixel sizes, nevertheless, they are also being hampered by limitations in instantaneous dynamic range, inter-pixel crosstalk, quantum full well capacity, signal-to-noise ratio, sensitivity, spectral flexibility, and in some cases, imager response time. Recently invented is the Coded Access Optical Sensor (CAOS) Camera platform that works in unison with current Photo-Detector Array (PDA) technology to counter fundamental limitations of PDA-based imagers while providing high enough imaging spatial resolution and pixel counts. Using for example the Texas Instruments (TI) Digital Micromirror Device (DMD) to engineer the CAOS camera platform, ushered in is a paradigm change in advanced imager design, particularly for extreme dynamic range applications.

High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

NASA Astrophysics Data System (ADS)

Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

2017-09-01

We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

CMOS foveal image sensor chip

NASA Technical Reports Server (NTRS)

Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Bandera, Cesar (Inventor); Xia, Shu (Inventor)

2002-01-01

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

A neighbor pixel communication filtering structure for Dynamic Vision Sensors

NASA Astrophysics Data System (ADS)

Xu, Yuan; Liu, Shiqi; Lu, Hehui; Zhang, Zilong

2017-02-01

For Dynamic Vision Sensors (DVS), thermal noise and junction leakage current induced Background Activity (BA) is the major cause of the deterioration of images quality. Inspired by the smoothing filtering principle of horizontal cells in vertebrate retina, A DVS pixel with Neighbor Pixel Communication (NPC) filtering structure is proposed to solve this issue. The NPC structure is designed to judge the validity of pixel's activity through the communication between its 4 adjacent pixels. The pixel's outputs will be suppressed if its activities are determined not real. The proposed pixel's area is 23.76×24.71μm2 and only 3ns output latency is introduced. In order to validate the effectiveness of the structure, a 5×5 pixel array has been implemented in SMIC 0.13μm CIS process. 3 test cases of array's behavioral model show that the NPC-DVS have an ability of filtering the BA.

Plenoptic camera image simulation for reconstruction algorithm verification

NASA Astrophysics Data System (ADS)

Schwiegerling, Jim

2014-09-01

Plenoptic cameras have emerged in recent years as a technology for capturing light field data in a single snapshot. A conventional digital camera can be modified with the addition of a lenslet array to create a plenoptic camera. Two distinct camera forms have been proposed in the literature. The first has the camera image focused onto the lenslet array. The lenslet array is placed over the camera sensor such that each lenslet forms an image of the exit pupil onto the sensor. The second plenoptic form has the lenslet array relaying the image formed by the camera lens to the sensor. We have developed a raytracing package that can simulate images formed by a generalized version of the plenoptic camera. Several rays from each sensor pixel are traced backwards through the system to define a cone of rays emanating from the entrance pupil of the camera lens. Objects that lie within this cone are integrated to lead to a color and exposure level for that pixel. To speed processing three-dimensional objects are approximated as a series of planes at different depths. Repeating this process for each pixel in the sensor leads to a simulated plenoptic image on which different reconstruction algorithms can be tested.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Monte Carlo Techniques for Calculations of Charge Deposition and Displacement Damage from Protons in Visible and Infrared Sensor Arrays

NASA Technical Reports Server (NTRS)

Marshall, Paul; Reed, Robert; Fodness, Bryan; Jordan, Tom; Pickel, Jim; Xapsos, Michael; Burke, Ed

2004-01-01

This slide presentation examines motivation for Monte Carlo methods, charge deposition in sensor arrays, displacement damage calculations, and future work. The discussion of charge deposition sensor arrays includes Si active pixel sensor APS arrays and LWIR HgCdTe FPAs. The discussion of displacement damage calculations includes nonionizing energy loss (NIEL), HgCdTe NIEL calculation results including variance, and implications for damage in HgCdTe detector arrays.

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

Transition-Edge Sensor Pixel Parameter Design of the Microcalorimeter Array for the X-Ray Integral Field Unit on Athena

NASA Technical Reports Server (NTRS)

Smith, S. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.;

Transition-edge sensor pixel parameter design of the microcalorimeter array for the x-ray integral field unit on Athena

NASA Astrophysics Data System (ADS)

Smith, S. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Miniussi, A. R.; Porter, F. S.; Sadleir, J. E.; Sakai, K.; Wakeham, N. A.; Wassell, E. J.; Yoon, W.; Bennett, D. A.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Morgan, K. M.; Pappas, C. G.; Reintsema, C. N.; Swetz, D. S.; Ullom, J. N.; Irwin, K. D.; Akamatsu, H.; Gottardi, L.; den Hartog, R.; Jackson, B. D.; van der Kuur, J.; Barret, D.; Peille, P.

2016-07-01

The focal plane of the X-ray integral field unit (X-IFU) for ESA's Athena X-ray observatory will consist of 4000 transition edge sensor (TES) x-ray microcalorimeters optimized for the energy range of 0.2 to 12 keV. The instrument will provide unprecedented spectral resolution of 2.5 eV at energies of up to 7 keV and will accommodate photon fluxes of 1 mCrab (90 cps) for point source observations. The baseline configuration is a uniform large pixel array (LPA) of 4.28" pixels that is read out using frequency domain multiplexing (FDM). However, an alternative configuration under study incorporates an 18 × 18 small pixel array (SPA) of 2" pixels in the central 36" region. This hybrid array configuration could be designed to accommodate higher fluxes of up to 10 mCrab (900 cps) or alternately for improved spectral performance (< 1.5 eV) at low count-rates. In this paper we report on the TES pixel designs that are being optimized to meet these proposed LPA and SPA configurations. In particular we describe details of how important TES parameters are chosen to meet the specific mission criteria such as energy resolution, count-rate and quantum efficiency, and highlight performance trade-offs between designs. The basis of the pixel parameter selection is discussed in the context of existing TES arrays that are being developed for solar and x-ray astronomy applications. We describe the latest results on DC biased diagnostic arrays as well as large format kilo-pixel arrays and discuss the technical challenges associated with integrating different array types on to a single detector die.

Evaluating video digitizer errors

NASA Astrophysics Data System (ADS)

Peterson, C.

2016-01-01

Analog output video cameras remain popular for recording meteor data. Although these cameras uniformly employ electronic detectors with fixed pixel arrays, the digitization process requires resampling the horizontal lines as they are output in order to reconstruct the pixel data, usually resulting in a new data array of different horizontal dimensions than the native sensor. Pixel timing is not provided by the camera, and must be reconstructed based on line sync information embedded in the analog video signal. Using a technique based on hot pixels, I present evidence that jitter, sync detection, and other timing errors introduce both position and intensity errors which are not present in cameras which internally digitize their sensors and output the digital data directly.

The Design of Optical Sensor for the Pinhole/Occulter Facility

NASA Technical Reports Server (NTRS)

Greene, Michael E.

1990-01-01

Three optical sight sensor systems were designed, built and tested. Two optical lines of sight sensor system are capable of measuring the absolute pointing angle to the sun. The system is for use with the Pinhole/Occulter Facility (P/OF), a solar hard x ray experiment to be flown from Space Shuttle or Space Station. The sensor consists of a pinhole camera with two pairs of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the pinhole, track and hold circuitry for data reduction, an analog to digital converter, and a microcomputer. The deflection of the image center is calculated from these data using an approximation for the solar image. A second system consists of a pinhole camera with a pair of perpendicularly mounted linear photodiode arrays, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed. A third optical sensor system is capable of measuring the internal vibration of the P/OF between the mask and base. The system consists of a white light source, a mirror and a pair of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the mirror, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image and hence the vibration of the structure is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed.

A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Watabe, Toshihisa; Ohtake, Hiroshi; Sakai, Toshikatsu; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, Takashi

2011-02-01

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128×96 for each color, and the pixel size is 100×100 µm2. The current on/off ratio of the ZnO TFT is over 106, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.

Development of X-Ray Microcalorimeter Imaging Spectrometers for the X-Ray Surveyor Mission Concept

NASA Technical Reports Server (NTRS)

Bandler, Simon R.; Adams, Joseph S.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Betncourt-Martinez, Gabriele; Miniussi, Antoine R.;

CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

PubMed

Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

2010-12-01

We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

The analysis and rationale behind the upgrading of existing standard definition thermal imagers to high definition

NASA Astrophysics Data System (ADS)

Goss, Tristan M.

2016-05-01

With 640x512 pixel format IR detector arrays having been on the market for the past decade, Standard Definition (SD) thermal imaging sensors have been developed and deployed across the world. Now with 1280x1024 pixel format IR detector arrays becoming readily available designers of thermal imager systems face new challenges as pixel sizes reduce and the demand and applications for High Definition (HD) thermal imaging sensors increases. In many instances the upgrading of existing under-sampled SD thermal imaging sensors into more optimally sampled or oversampled HD thermal imaging sensors provides a more cost effective and reduced time to market option than to design and develop a completely new sensor. This paper presents the analysis and rationale behind the selection of the best suited HD pixel format MWIR detector for the upgrade of an existing SD thermal imaging sensor to a higher performing HD thermal imaging sensor. Several commercially available and "soon to be" commercially available HD small pixel IR detector options are included as part of the analysis and are considered for this upgrade. The impact the proposed detectors have on the sensor's overall sensitivity, noise and resolution is analyzed, and the improved range performance is predicted. Furthermore with reduced dark currents due to the smaller pixel sizes, the candidate HD MWIR detectors are operated at higher temperatures when compared to their SD predecessors. Therefore, as an additional constraint and as a design goal, the feasibility of achieving upgraded performance without any increase in the size, weight and power consumption of the thermal imager is discussed herein.

Smart CMOS image sensor for lightning detection and imaging.

PubMed

Rolando, Sébastien; Goiffon, Vincent; Magnan, Pierre; Corbière, Franck; Molina, Romain; Tulet, Michel; Bréart-de-Boisanger, Michel; Saint-Pé, Olivier; Guiry, Saïprasad; Larnaudie, Franck; Leone, Bruno; Perez-Cuevas, Leticia; Zayer, Igor

2013-03-01

We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach.

Experimental single-chip color HDTV image acquisition system with 8M-pixel CMOS image sensor

NASA Astrophysics Data System (ADS)

Shimamoto, Hiroshi; Yamashita, Takayuki; Funatsu, Ryohei; Mitani, Kohji; Nojiri, Yuji

2006-02-01

We have developed an experimental single-chip color HDTV image acquisition system using 8M-pixel CMOS image sensor. The sensor has 3840 × 2160 effective pixels and is progressively scanned at 60 frames per second. We describe the color filter array and interpolation method to improve image quality with a high-pixel-count single-chip sensor. We also describe an experimental image acquisition system we used to measured spatial frequency characteristics in the horizontal direction. The results indicate good prospects for achieving a high quality single chip HDTV camera that reduces pseudo signals and maintains high spatial frequency characteristics within the frequency band for HDTV.

Distributed Antenna-Coupled TES for FIR Detectors Arrays

NASA Technical Reports Server (NTRS)

Day, Peter K.; Leduc, Henry G.; Dowell, C. Darren; Lee, Richard A.; Zmuidzinas, Jonas

2007-01-01

We describe a new architecture for a superconducting detector for the submillimeter and far-infrared. This detector uses a distributed hot-electron transition edge sensor (TES) to collect the power from a focal-plane-filling slot antenna array. The sensors lay directly across the slots of the antenna and match the antenna impedance of about 30 ohms. Each pixel contains many sensors that are wired in parallel as a single distributed TES, which results in a low impedance that readily matches to a multiplexed SQUID readout These detectors are inherently polarization sensitive, with very low cross-polarization response, but can also be configured to sum both polarizations. The dual-polarization design can have a bandwidth of 50The use of electron-phonon decoupling eliminates the need for micro-machining, making the focal plane much easier to fabricate than with absorber-coupled, mechanically isolated pixels. We discuss applications of these detectors and a hybridization scheme compatible with arrays of tens of thousands of pixels.

1024-Pixel CMOS Multimodality Joint Cellular Sensor/Stimulator Array for Real-Time Holistic Cellular Characterization and Cell-Based Drug Screening.

PubMed

Park, Jong Seok; Aziz, Moez Karim; Li, Sensen; Chi, Taiyun; Grijalva, Sandra Ivonne; Sung, Jung Hoon; Cho, Hee Cheol; Wang, Hua

2018-02-01

This paper presents a fully integrated CMOS multimodality joint sensor/stimulator array with 1024 pixels for real-time holistic cellular characterization and drug screening. The proposed system consists of four pixel groups and four parallel signal-conditioning blocks. Every pixel group contains 16 × 16 pixels, and each pixel includes one gold-plated electrode, four photodiodes, and in-pixel circuits, within a pixel footprint. Each pixel supports real-time extracellular potential recording, optical detection, charge-balanced biphasic current stimulation, and cellular impedance measurement for the same cellular sample. The proposed system is fabricated in a standard 130-nm CMOS process. Rat cardiomyocytes are successfully cultured on-chip. Measured high-resolution optical opacity images, extracellular potential recordings, biphasic current stimulations, and cellular impedance images demonstrate the unique advantages of the system for holistic cell characterization and drug screening. Furthermore, this paper demonstrates the use of optical detection on the on-chip cultured cardiomyocytes to real-time track their cyclic beating pattern and beating rate.

Spectral Analysis of the Primary Flight Focal Plane Arrays for the Thermal Infrared Sensor

NASA Technical Reports Server (NTRS)

Montanaro, Matthew; Reuter, Dennis C.; Markham, Brian L.; Thome, Kurtis J.; Lunsford, Allen W.; Jhabvala, Murzy D.; Rohrbach, Scott O.; Gerace, Aaron D.

2011-01-01

Thermal Infrared Sensor (TIRS) is a (1) New longwave infrared (10 - 12 micron) sensor for the Landsat Data Continuity Mission, (2) 185 km ground swath; 100 meter pixel size on ground, (3) Pushbroom sensor configuration. Issue of Calibration are: (1) Single detector -- only one calibration, (2) Multiple detectors - unique calibration for each detector -- leads to pixel-to-pixel artifacts. Objectives are: (1) Predict extent of residual striping when viewing a uniform blackbody target through various atmospheres, (2) Determine how different spectral shapes affect the derived surface temperature in a realistic synthetic scene.

Recent developments in OLED-based chemical and biological sensors

NASA Astrophysics Data System (ADS)

Shinar, Joseph; Zhou, Zhaoqun; Cai, Yuankun; Shinar, Ruth

2007-09-01

Recent developments in the structurally integrated OLED-based platform of luminescent chemical and biological sensors are reviewed. In this platform, an array of OLED pixels, which is structurally integrated with the sensing elements, is used as the photoluminescence (PL) excitation source. The structural integration is achieved by fabricating the OLED array and the sensing element on opposite sides of a common glass substrate or on two glass substrates that are attached back-to-back. As it does not require optical fibers, lens, or mirrors, it results in a uniquely simple, low-cost, and potentially rugged geometry. The recent developments on this platform include the following: (1) Enhancing the performance of gas-phase and dissolved oxygen sensors. This is achieved by (a) incorporating high-dielectric TiO II nanoparticles in the oxygen-sensitive Pt and Pd octaethylporphyrin (PtOEP and PdOEP, respectively)- doped polystyrene (PS) sensor films, and (b) embedding the oxygen-sensitive dyes in a matrix of polymer blends such as PS:polydimethylsiloxane (PDMS). (2) Developing sensor arrays for simultaneous detection of multiple serum analytes, including oxygen, glucose, lactate, and alcohol. The sensing element for each analyte consists of a PtOEP-doped PS oxygen sensor, and a solution containing the oxidase enzyme specific to the analyte. Each sensing element is coupled to two individually addressable OLED pixels and a Si photodiode photodetector (PD). (3) Enhancing the integration of the platform, whereby a PD array is also structurally integrated with the OLED array and sensing elements. This enhanced integration is achieved by fabricating an array of amorphous or nanocrystalline Si-based PDs, followed by fabrication of the OLED pixels in the gaps between these Si PDs.

CMOS imager for pointing and tracking applications

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

2006-01-01

Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

DTIC Science & Technology

2016-01-20

Figure 7 4×4 GMAPD array wire bonded to CMOS timing circuits Figure 8 Low‐fill‐factor APD design used in lidar sensors The APD doping...epitaxial growth and the pixels are isolated by mesa etch. 128×32 lidar image sensors were built by bump bonding the APD arrays to a CMOS timing...passive image sensor with this large a format based on hybridization of a GMAPD array to a CMOS readout. Fig. 14 shows one of the first images taken

Modeling Charge Collection in Detector Arrays

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Pickel, J. C.

2003-01-01

A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

The Transition-Edge-Sensor Array for the Micro-X Sounding Rocket

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, Sarah Elizabeth; Chervenak J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porst, J. P.;

MTF evaluation of white pixel sensors

NASA Astrophysics Data System (ADS)

Lindner, Albrecht; Atanassov, Kalin; Luo, Jiafu; Goma, Sergio

2015-01-01

We present a methodology to compare image sensors with traditional Bayer RGB layouts to sensors with alternative layouts containing white pixels. We focused on the sensors' resolving powers, which we measured in the form of a modulation transfer function for variations in both luma and chroma channels. We present the design of the test chart, the acquisition of images, the image analysis, and an interpretation of results. We demonstrate the approach at the example of two sensors that only differ in their color filter arrays. We confirmed that the sensor with white pixels and the corresponding demosaicing result in a higher resolving power in the luma channel, but a lower resolving power in the chroma channels when compared to the traditional Bayer sensor.

A Dual-Mode Large-Arrayed CMOS ISFET Sensor for Accurate and High-Throughput pH Sensing in Biomedical Diagnosis.

PubMed

Huang, Xiwei; Yu, Hao; Liu, Xu; Jiang, Yu; Yan, Mei; Wu, Dongping

2015-09-01

The existing ISFET-based DNA sequencing detects hydrogen ions released during the polymerization of DNA strands on microbeads, which are scattered into microwell array above the ISFET sensor with unknown distribution. However, false pH detection happens at empty microwells due to crosstalk from neighboring microbeads. In this paper, a dual-mode CMOS ISFET sensor is proposed to have accurate pH detection toward DNA sequencing. Dual-mode sensing, optical and chemical modes, is realized by integrating a CMOS image sensor (CIS) with ISFET pH sensor, and is fabricated in a standard 0.18-μm CIS process. With accurate determination of microbead physical locations with CIS pixel by contact imaging, the dual-mode sensor can correlate local pH for one DNA slice at one location-determined microbead, which can result in improved pH detection accuracy. Moreover, toward a high-throughput DNA sequencing, a correlated-double-sampling readout that supports large array for both modes is deployed to reduce pixel-to-pixel nonuniformity such as threshold voltage mismatch. The proposed CMOS dual-mode sensor is experimentally examined to show a well correlated pH map and optical image for microbeads with a pH sensitivity of 26.2 mV/pH, a fixed pattern noise (FPN) reduction from 4% to 0.3%, and a readout speed of 1200 frames/s. A dual-mode CMOS ISFET sensor with suppressed FPN for accurate large-arrayed pH sensing is proposed and demonstrated with state-of-the-art measured results toward accurate and high-throughput DNA sequencing. The developed dual-mode CMOS ISFET sensor has great potential for future personal genome diagnostics with high accuracy and low cost.

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

PubMed

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

An All Silicon Feedhorn-Coupled Focal Plane for Cosmic Microwave Background Polarimetry

NASA Technical Reports Server (NTRS)

Hubmayr, J.; Appel, J. W.; Austermann, J. E.; Beall, J. A.; Becker, D.; Benson, B. A.; Bleem, L. E.; Carlstrom, J. E.; Chang, C. L.; Cho, H. M.;

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE PAGES

An, Mangmang; Chen, Chufeng; Gao, Chaosong; ...

2015-12-12

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Mangmang; Chen, Chufeng; Gao, Chaosong

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

CdZnTe Image Detectors for Hard-X-Ray Telescopes

NASA Technical Reports Server (NTRS)

Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.; Mao, Peter H.; Schindler, Stephen M.

2005-01-01

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

A Detailed Look at the Performance Characteristics of the Lightning Imaging Sensor

NASA Technical Reports Server (NTRS)

Zhang, Daile; Cummins, Kenneth L.; Bitzer, Phillip; Koshak, William J.

2018-01-01

The Lightning Imaging Sensor (LIS) on board the Tropical Rainfall Measuring Mission (TRMM) effectively reached its end of life on April 15, 2015 after 17+ years of observation. Given the wealth of information in the archived LIS lightning data, and growing use of optical observations of lightning from space throughout the world, it is still of importance to better understand LIS calibration and performance characteristics. In this work, we continue our efforts to quantify the optical characteristics of the LIS pixel array, and to further characterize the detection efficiency and location accuracy of LIS. The LIS pixel array was partitioned into four quadrants, each having its own signal amplifier and digital conversion hardware. In addition, the sensor optics resulted in a decreasing sensitivity with increasing displacement from the center of the array. These engineering limitations resulted in differences in the optical emissions detected across the pixel array. Our work to date has shown a 20% increase in the count of the lightning events detected in one of the LIS quadrants, because of a lower detection threshold. In this study, we will discuss our work in progress on these limitations, and their potential impact on the group- and flash-level parameters.

Towards Development of Microcalorimeter Arrays of Mo/Au Transition-Edge Sensors with Bismuth Absorbers

NASA Technical Reports Server (NTRS)

Tralshawala, Nilesh; Brekosky, Regis; Figueroa-Feliciano, Enectali; Li, Mary; Stahle, Carl; Stahle, Caroline

2000-01-01

We report on our progress towards the development of arrays of X-ray microcalorimeters as candidates for the high resolution x-ray spectrometer on the Constellation-X mission. The microcalorimeter arrays (30 x 30) with appropriate pixel sizes (0.25 mm. x 0.25 mm) and high packing fractions (greater than 96%) are being developed. Each individual pixel has a 10 micron thick Bi X-ray absorber that is shaped like a mushroom to increase the packing fraction, and a Mo/Au proximity effect superconducting transition edge sensor (TES). These are deposited on a 0.25 or 0.5 micron thick silicon nitride membrane with slits to provide a controllable weak thermal link to the sink temperature. Studies are underway to model, test and optimize the TES pixel uniformity, critical current, heat capacity and the membrane thermal conductance in the array structure. Fabrication issues and procedures, and results of our efforts based on these optimizations will be provided.

Backside illuminated CMOS-TDI line scanner for space applications

NASA Astrophysics Data System (ADS)

Cohen, O.; Ben-Ari, N.; Nevo, I.; Shiloah, N.; Zohar, G.; Kahanov, E.; Brumer, M.; Gershon, G.; Ofer, O.

2017-09-01

A new multi-spectral line scanner CMOS image sensor is reported. The backside illuminated (BSI) image sensor was designed for continuous scanning Low Earth Orbit (LEO) space applications including A custom high quality CMOS Active Pixels, Time Delayed Integration (TDI) mechanism that increases the SNR, 2-phase exposure mechanism that increases the dynamic Modulation Transfer Function (MTF), very low power internal Analog to Digital Converters (ADC) with resolution of 12 bit per pixel and on chip controller. The sensor has 4 independent arrays of pixels where each array is arranged in 2600 TDI columns with controllable TDI depth from 8 up to 64 TDI levels. A multispectral optical filter with specific spectral response per array is assembled at the package level. In this paper we briefly describe the sensor design and present some electrical and electro-optical recent measurements of the first prototypes including high Quantum Efficiency (QE), high MTF, wide range selectable Full Well Capacity (FWC), excellent linearity of approximately 1.3% in a signal range of 5-85% and approximately 1.75% in a signal range of 2-95% out of the signal span, readout noise of approximately 95 electrons with 64 TDI levels, negligible dark current and power consumption of less than 1.5W total for 4 bands sensor at all operation conditions .

Circuit design for the retina-like image sensor based on space-variant lens array

NASA Astrophysics Data System (ADS)

Gao, Hongxun; Hao, Qun; Jin, Xuefeng; Cao, Jie; Liu, Yue; Song, Yong; Fan, Fan

2013-12-01

Retina-like image sensor is based on the non-uniformity of the human eyes and the log-polar coordinate theory. It has advantages of high-quality data compression and redundant information elimination. However, retina-like image sensors based on the CMOS craft have drawbacks such as high cost, low sensitivity and signal outputting efficiency and updating inconvenience. Therefore, this paper proposes a retina-like image sensor based on space-variant lens array, focusing on the circuit design to provide circuit support to the whole system. The circuit includes the following parts: (1) A photo-detector array with a lens array to convert optical signals to electrical signals; (2) a strobe circuit for time-gating of the pixels and parallel paths for high-speed transmission of the data; (3) a high-precision digital potentiometer for the I-V conversion, ratio normalization and sensitivity adjustment, a programmable gain amplifier for automatic generation control(AGC), and a A/D converter for the A/D conversion in every path; (4) the digital data is displayed on LCD and stored temporarily in DDR2 SDRAM; (5) a USB port to transfer the data to PC; (6) the whole system is controlled by FPGA. This circuit has advantages as lower cost, larger pixels, updating convenience and higher signal outputting efficiency. Experiments have proved that the grayscale output of every pixel basically matches the target and a non-uniform image of the target is ideally achieved in real time. The circuit can provide adequate technical support to retina-like image sensors based on space-variant lens array.

Reduced-Scale Transition-Edge Sensor Detectors for Solar and X-Ray Astrophysics

NASA Technical Reports Server (NTRS)

Datesman, Aaron M.; Adams, Joseph S.; Bandler, Simon R.; Betancourt-Martinez, Gabriele L.; Chang, Meng-Ping; Chervenak, James A.; Eckart, Megan E.; Ewin, Audrey E.; Finkbeiner, Fred M.; Ha, Jong Yoon;

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability.

PubMed

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U

2015-03-06

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle.

An Ultra-Low Power CMOS Image Sensor with On-Chip Energy Harvesting and Power Management Capability

PubMed Central

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U.

2015-01-01

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle. PMID:25756863

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications.

PubMed

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-12-29

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors' architecture on the basis of the type of electric measurement or imaging functionalities.

Performance of Large Format Transition Edge Sensor Microcalorimeter Arrays

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Adams, J. A.; Bandler, S. B.; Busch, S. E.; Eckart, M. E.; Ewin, A. E.; Finkbeiner, F. M.; Kilbourne, C. A.; Kelley, R. L.; Porst, J. P.;

Sparsely-Bonded CMOS Hybrid Imager

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Jones, Todd J. (Inventor); Nikzad, Shouleh (Inventor); Newton, Kenneth W. (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce R. (Inventor); Dickie, Matthew R. (Inventor); Hoenk, Michael E. (Inventor); Wrigley, Christopher J. (Inventor); Pain, Bedabrata (Inventor)

2015-01-01

A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel.

Active Pixel Sensors: Are CCD's Dinosaurs?

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1993-01-01

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

NASA Technical Reports Server (NTRS)

Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl J.; Reed, Robert; Pickel, Jim; Kniffin, Scott

2002-01-01

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

PubMed Central

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

New Optimizations of Microcalorimeter Arrays for High-Resolution Imaging X-ray Spectroscopy

NASA Astrophysics Data System (ADS)

Kilbourne, Caroline

We propose to continue our successful research program in developing arrays of superconducting transition-edge sensors (TES) for x-ray astrophysics. Our standard 0.3 mm TES pixel achieves better than 2.5-eV resolution, and we now make 32x32 arrays of such pixels. We have also achieved better than 1-eV resolution in smaller pixels, and promising performance in a range of position-sensitive designs. We propose to continue to advance the designs of both the single-pixel and position-sensitive microcalorimeters so that we can produce arrays suitable for several x-ray spectroscopy observatories presently in formulation. We will also investigate various array and pixel optimizations such as would be needed for large arrays for surveys, large- pixel arrays for diffuse soft x-ray measurements, or sub-arrays of fast pixels optimized for neutron-star burst spectroscopy. In addition, we will develop fabrication processes for integrating sub-arrays with very different pixel designs into a monolithic focal-plane array to simplify the design of the focal-plane assembly and make feasible new detector configurations such as the one currently baselined for AXSIO. Through a series of measurements on test devices, we have improved our understanding of the weak-link physics governing the observed resistive transitions in TES detectors. We propose to build on that work and ultimately use the results to improve the immunity of the detector to environmental magnetic fields, as well as its fundamental performance, in each of the targeted optimizations we are developing.

CMOS image sensor with lateral electric field modulation pixels for fluorescence lifetime imaging with sub-nanosecond time response

NASA Astrophysics Data System (ADS)

Li, Zhuo; Seo, Min-Woong; Kagawa, Keiichiro; Yasutomi, Keita; Kawahito, Shoji

2016-04-01

This paper presents the design and implementation of a time-resolved CMOS image sensor with a high-speed lateral electric field modulation (LEFM) gating structure for time domain fluorescence lifetime measurement. Time-windowed signal charge can be transferred from a pinned photodiode (PPD) to a pinned storage diode (PSD) by turning on a pair of transfer gates, which are situated beside the channel. Unwanted signal charge can be drained from the PPD to the drain by turning on another pair of gates. The pixel array contains 512 (V) × 310 (H) pixels with 5.6 × 5.6 µm2 pixel size. The imager chip was fabricated using 0.11 µm CMOS image sensor process technology. The prototype sensor has a time response of 150 ps at 374 nm. The fill factor of the pixels is 5.6%. The usefulness of the prototype sensor is demonstrated for fluorescence lifetime imaging through simulation and measurement results.

Chemiresistive Graphene Sensors for Ammonia Detection.

PubMed

Mackin, Charles; Schroeder, Vera; Zurutuza, Amaia; Su, Cong; Kong, Jing; Swager, Timothy M; Palacios, Tomás

2018-05-09

The primary objective of this work is to demonstrate a novel sensor system as a convenient vehicle for scaled-up repeatability and the kinetic analysis of a pixelated testbed. This work presents a sensor system capable of measuring hundreds of functionalized graphene sensors in a rapid and convenient fashion. The sensor system makes use of a novel array architecture requiring only one sensor per pixel and no selector transistor. The sensor system is employed specifically for the evaluation of Co(tpfpp)ClO 4 functionalization of graphene sensors for the detection of ammonia as an extension of previous work. Co(tpfpp)ClO 4 treated graphene sensors were found to provide 4-fold increased ammonia sensitivity over pristine graphene sensors. Sensors were also found to exhibit excellent selectivity over interfering compounds such as water and common organic solvents. The ability to monitor a large sensor array with 160 pixels provides insights into performance variations and reproducibility-critical factors in the development of practical sensor systems. All sensors exhibit the same linearly related responses with variations in response exhibiting Gaussian distributions, a key finding for variation modeling and quality engineering purposes. The mean correlation coefficient between sensor responses was found to be 0.999 indicating highly consistent sensor responses and excellent reproducibility of Co(tpfpp)ClO 4 functionalization. A detailed kinetic model is developed to describe sensor response profiles. The model consists of two adsorption mechanisms-one reversible and one irreversible-and is shown capable of fitting experimental data with a mean percent error of 0.01%.

On Certain New Methodology for Reducing Sensor and Readout Electronics Circuitry Noise in Digital Domain

NASA Technical Reports Server (NTRS)

Kizhner, Semion; Miko, Joseph; Bradley, Damon; Heinzen, Katherine

2008-01-01

NASA Hubble Space Telescope (HST) and upcoming cosmology science missions carry instruments with multiple focal planes populated with many large sensor detector arrays. These sensors are passively cooled to low temperatures for low-level light (L3) and near-infrared (NIR) signal detection, and the sensor readout electronics circuitry must perform at extremely low noise levels to enable new required science measurements. Because we are at the technological edge of enhanced performance for sensors and readout electronics circuitry, as determined by thermal noise level at given temperature in analog domain, we must find new ways of further compensating for the noise in the signal digital domain. To facilitate this new approach, state-of-the-art sensors are augmented at their array hardware boundaries by non-illuminated reference pixels, which can be used to reduce noise attributed to sensors. There are a few proposed methodologies of processing in the digital domain the information carried by reference pixels, as employed by the Hubble Space Telescope and the James Webb Space Telescope Projects. These methods involve using spatial and temporal statistical parameters derived from boundary reference pixel information to enhance the active (non-reference) pixel signals. To make a step beyond this heritage methodology, we apply the NASA-developed technology known as the Hilbert- Huang Transform Data Processing System (HHT-DPS) for reference pixel information processing and its utilization in reconfigurable hardware on-board a spaceflight instrument or post-processing on the ground. The methodology examines signal processing for a 2-D domain, in which high-variance components of the thermal noise are carried by both active and reference pixels, similar to that in processing of low-voltage differential signals and subtraction of a single analog reference pixel from all active pixels on the sensor. Heritage methods using the aforementioned statistical parameters in the digital domain (such as statistical averaging of the reference pixels themselves) zeroes out the high-variance components, and the counterpart components in the active pixels remain uncorrected. This paper describes how the new methodology was demonstrated through analysis of fast-varying noise components using the Hilbert-Huang Transform Data Processing System tool (HHT-DPS) developed at NASA and the high-level programming language MATLAB (Trademark of MathWorks Inc.), as well as alternative methods for correcting for the high-variance noise component, using an HgCdTe sensor data. The NASA Hubble Space Telescope data post-processing, as well as future deep-space cosmology projects on-board instrument data processing from all the sensor channels, would benefit from this effort.

Development of pixellated Ir-TESs

NASA Astrophysics Data System (ADS)

Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Damayanthi, Rathnayaka M. T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

2006-04-01

We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μm×45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES.

High-speed particle tracking in microscopy using SPAD image sensors

NASA Astrophysics Data System (ADS)

Gyongy, Istvan; Davies, Amy; Miguelez Crespo, Allende; Green, Andrew; Dutton, Neale A. W.; Duncan, Rory R.; Rickman, Colin; Henderson, Robert K.; Dalgarno, Paul A.

2018-02-01

Single photon avalanche diodes (SPADs) are used in a wide range of applications, from fluorescence lifetime imaging microscopy (FLIM) to time-of-flight (ToF) 3D imaging. SPAD arrays are becoming increasingly established, combining the unique properties of SPADs with widefield camera configurations. Traditionally, the photosensitive area (fill factor) of SPAD arrays has been limited by the in-pixel digital electronics. However, recent designs have demonstrated that by replacing the complex digital pixel logic with simple binary pixels and external frame summation, the fill factor can be increased considerably. A significant advantage of such binary SPAD arrays is the high frame rates offered by the sensors (>100kFPS), which opens up new possibilities for capturing ultra-fast temporal dynamics in, for example, life science cellular imaging. In this work we consider the use of novel binary SPAD arrays in high-speed particle tracking in microscopy. We demonstrate the tracking of fluorescent microspheres undergoing Brownian motion, and in intra-cellular vesicle dynamics, at high frame rates. We thereby show how binary SPAD arrays can offer an important advance in live cell imaging in such fields as intercellular communication, cell trafficking and cell signaling.

Advances in OLED-based oxygen sensors with structurally integrated OLED, sensor film, and thin-film Si photodetector

NASA Astrophysics Data System (ADS)

Ghosh, Debju; Shinar, Ruth; Cai, Yuankun; Zhou, Zhaoqun; Dalal, Vikram L.; Shinar, Joseph

2007-09-01

Steps towards the improvement of a compact photoluminescence (PL)-based sensor array that is fully structurally integrated are described. The approach is demonstrated for oxygen sensing, which can be monitored via its effect on the PL intensity I or decay time τ of oxygen-sensitive dyes such as Pt octaethylporphryn (PtOEP) and its Pd analog (PdOEP). The integrated components include (1) an organic light emitting device (OLED) excitation source, which is an array of coumarin-doped tris(quinolinolate) Al (Alq 3) pixels, (2) the sensor film, i.e., PdOEP embedded in polystyrene, and (3) the photodetector (PD), which is a plasma-enhanced CVD-grown p-i-n or n-i-p structure, based on amorphous or nanocrystalline (Si,Ge):H. These components are fabricated on common or separate substrates that are attached back-to-back, resulting in sensors with a thickness largely determined by that of the substrates. The fully integrated oxygen sensor is demonstrated first by fabricating each of the three components on a separate substrate. The PD was placed in front of a flow cell containing the sensor film, while the OLED array was "behind" the sensor film. This design showed the expected trend in monitoring different concentration of O II via their effect on I, with improved detection sensitivity achieved by shielding the electromagnetic noise synchronous with the pulsed OLED. The detection sensitivity using the I monitoring mode is expected to further increase by reducing the OLED tail emission. The issue of the OLED background can be eliminated by monitoring the oxygen concentration via its effect on τ, where the OLED is pulsed and τ is measured while the OLED is off. Steps therefore focused also on shortening the response time of the PDs, and understanding the factors affecting their speed. Development of a sensor array, where the PD pixels are fabricated between the OLED pixels on the same side of a common substrate, is also discussed.

Magnetic Calorimeter Arrays with High Sensor Inductance and Dense Wiring

NASA Astrophysics Data System (ADS)

Stevenson, T. R.; Balvin, M. A.; Bandler, S. R.; Devasia, A. M.; Nagler, P. C.; Smith, S. J.; Yoon, W.

2018-05-01

We describe prototype arrays of magnetically coupled microcalorimeters fabricated with an approach scalable to very large format arrays. The superconducting interconnections and sensor coils have sufficiently low inductance in the wiring and sufficiently high inductance in the coils in each pixel, to enable arrays containing greater than 4000 sensors and 100,000 X-ray absorbers to be used in future astrophysics missions such as Lynx. We have used projection lithography to create submicron patterns (e.g., 400 nm lines and spaces) in our niobium sensor coils and wiring, integrated with gold-erbium sensor films and gold X-ray absorbers. Our prototype devices will explore the device physics of metallic magnetic calorimeters as feature sizes are reduced to nanoscale.

Multispectral linear array visible and shortwave infrared sensors

NASA Astrophysics Data System (ADS)

Tower, J. R.; Warren, F. B.; Pellon, L. E.; Strong, R.; Elabd, H.; Cope, A. D.; Hoffmann, D. M.; Kramer, W. M.; Longsderff, R. W.

1984-08-01

All-solid state pushbroom sensors for multispectral linear array (MLA) instruments to replace mechanical scanners used on LANDSAT satellites are introduced. A buttable, four-spectral-band, linear-format charge coupled device (CCD) and a buttable, two-spectral-band, linear-format, shortwave infrared CCD are described. These silicon integrated circuits may be butted end to end to provide multispectral focal planes with thousands of contiguous, in-line photosites. The visible CCD integrated circuit is organized as four linear arrays of 1024 pixels each. Each array views the scene in a different spectral window, resulting in a four-band sensor. The shortwave infrared (SWIR) sensor is organized as 2 linear arrays of 512 detectors each. Each linear array is optimized for performance at a different wavelength in the SWIR band.

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

Optical design of microlens array for CMOS image sensors

NASA Astrophysics Data System (ADS)

Zhang, Rongzhu; Lai, Liping

2016-10-01

The optical crosstalk between the pixel units can influence the image quality of CMOS image sensor. In the meantime, the duty ratio of CMOS is low because of its pixel structure. These two factors cause the low detection sensitivity of CMOS. In order to reduce the optical crosstalk and improve the fill factor of CMOS image sensor, a microlens array has been designed and integrated with CMOS. The initial parameters of the microlens array have been calculated according to the structure of a CMOS. Then the parameters have been optimized by using ZEMAX and the microlens arrays with different substrate thicknesses have been compared. The results show that in order to obtain the best imaging quality, when the effect of optical crosstalk for CMOS is the minimum, the best distance between microlens array and CMOS is about 19.3 μm. When incident light successively passes through microlens array and the distance, obtaining the minimum facula is around 0.347 um in the active area. In addition, when the incident angle of the light is 0o 22o, the microlens array has obvious inhibitory effect on the optical crosstalk. And the anti-crosstalk distance between microlens array and CMOS is 0 μm 162 μm.

Indium antimonide large-format detector arrays

NASA Astrophysics Data System (ADS)

Davis, Mike; Greiner, Mark

2011-06-01

Large format infrared imaging sensors are required to achieve simultaneously high resolution and wide field of view image data. Infrared sensors are generally required to be cooled from room temperature to cryogenic temperatures in less than 10 min thousands of times during their lifetime. The challenge is to remove mechanical stress, which is due to different materials with different coefficients of expansion, over a very wide temperature range and at the same time, provide a high sensitivity and high resolution image data. These challenges are met by developing a hybrid where the indium antimonide detector elements (pixels) are unconnected islands that essentially float on a silicon substrate and form a near perfect match to the silicon read-out circuit. Since the pixels are unconnected and isolated from each other, the array is reticulated. This paper shows that the front side illuminated and reticulated element indium antimonide focal plane developed at L-3 Cincinnati Electronics are robust, approach background limited sensitivity limit, and provide the resolution expected of the reticulated pixel array.

Motion camera based on a custom vision sensor and an FPGA architecture

NASA Astrophysics Data System (ADS)

Arias-Estrada, Miguel

1998-09-01

A digital camera for custom focal plane arrays was developed. The camera allows the test and development of analog or mixed-mode arrays for focal plane processing. The camera is used with a custom sensor for motion detection to implement a motion computation system. The custom focal plane sensor detects moving edges at the pixel level using analog VLSI techniques. The sensor communicates motion events using the event-address protocol associated to a temporal reference. In a second stage, a coprocessing architecture based on a field programmable gate array (FPGA) computes the time-of-travel between adjacent pixels. The FPGA allows rapid prototyping and flexible architecture development. Furthermore, the FPGA interfaces the sensor to a compact PC computer which is used for high level control and data communication to the local network. The camera could be used in applications such as self-guided vehicles, mobile robotics and smart surveillance systems. The programmability of the FPGA allows the exploration of further signal processing like spatial edge detection or image segmentation tasks. The article details the motion algorithm, the sensor architecture, the use of the event- address protocol for velocity vector computation and the FPGA architecture used in the motion camera system.

Coincidence detection of spatially correlated photon pairs with a monolithic time-resolving detector array.

PubMed

Unternährer, Manuel; Bessire, Bänz; Gasparini, Leonardo; Stoppa, David; Stefanov, André

2016-12-12

We demonstrate coincidence measurements of spatially entangled photons by means of a multi-pixel based detection array. The sensor, originally developed for positron emission tomography applications, is a fully digital 8×16 silicon photomultiplier array allowing not only photon counting but also per-pixel time stamping of the arrived photons with an effective resolution of 265 ps. Together with a frame rate of 500 kfps, this property exceeds the capabilities of conventional charge-coupled device cameras which have become of growing interest for the detection of transversely correlated photon pairs. The sensor is used to measure a second-order correlation function for various non-collinear configurations of entangled photons generated by spontaneous parametric down-conversion. The experimental results are compared to theory.

Bio-Inspired Asynchronous Pixel Event Tricolor Vision Sensor.

PubMed

Lenero-Bardallo, Juan Antonio; Bryn, D H; Hafliger, Philipp

2014-06-01

This article investigates the potential of the first ever prototype of a vision sensor that combines tricolor stacked photo diodes with the bio-inspired asynchronous pixel event communication protocol known as Address Event Representation (AER). The stacked photo diodes are implemented in a 22 × 22 pixel array in a standard STM 90 nm CMOS process. Dynamic range is larger than 60 dB and pixels fill factor is 28%. The pixels employ either simple pulse frequency modulation (PFM) or a Time-to-First-Spike (TFS) mode. A heuristic linear combination of the chip's inherent pseudo colors serves to approximate RGB color representation. Furthermore, the sensor outputs can be processed to represent the radiation in the near infrared (NIR) band without employing external filters, and to color-encode direction of motion due to an asymmetry in the update rates of the different diode layers.

Miniature infrared hyperspectral imaging sensor for airborne applications

NASA Astrophysics Data System (ADS)

Hinnrichs, Michele; Hinnrichs, Bradford; McCutchen, Earl

2017-05-01

Pacific Advanced Technology (PAT) has developed an infrared hyperspectral camera, both MWIR and LWIR, small enough to serve as a payload on a miniature unmanned aerial vehicles. The optical system has been integrated into the cold-shield of the sensor enabling the small size and weight of the sensor. This new and innovative approach to infrared hyperspectral imaging spectrometer uses micro-optics and will be explained in this paper. The micro-optics are made up of an area array of diffractive optical elements where each element is tuned to image a different spectral region on a common focal plane array. The lenslet array is embedded in the cold-shield of the sensor and actuated with a miniature piezo-electric motor. This approach enables rapid infrared spectral imaging with multiple spectral images collected and processed simultaneously each frame of the camera. This paper will present our optical mechanical design approach which results in an infrared hyper-spectral imaging system that is small enough for a payload on a mini-UAV or commercial quadcopter. The diffractive optical elements used in the lenslet array are blazed gratings where each lenslet is tuned for a different spectral bandpass. The lenslets are configured in an area array placed a few millimeters above the focal plane and embedded in the cold-shield to reduce the background signal normally associated with the optics. We have developed various systems using a different number of lenslets in the area array. Depending on the size of the focal plane and the diameter of the lenslet array will determine the spatial resolution. A 2 x 2 lenslet array will image four different spectral images of the scene each frame and when coupled with a 512 x 512 focal plane array will give spatial resolution of 256 x 256 pixel each spectral image. Another system that we developed uses a 4 x 4 lenslet array on a 1024 x 1024 pixel element focal plane array which gives 16 spectral images of 256 x 256 pixel resolution each frame.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

PubMed Central

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-01-01

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities. PMID:28879978

Photon small-field measurements with a CMOS active pixel sensor.

PubMed

Spang, F Jiménez; Rosenberg, I; Hedin, E; Royle, G

2015-06-07

In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm(2). The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters.

PubMed

Yu, Yan; Chen, Qin; Wen, Long; Hu, Xin; Zhang, Hui-Fang

2015-08-24

Imaging resolution of complementary metal oxide semiconductor (CMOS) image sensor (CIS) keeps increasing to approximately 7k × 4k. As a result, the pixel size shrinks down to sub-2μm, which greatly increases the spatial optical crosstalk. Recently, plasmonic color filter was proposed as an alternative to conventional colorant pigmented ones. However, there is little work on its size effect and the spatial optical crosstalk in a model of CIS. By numerical simulation, we investigate the size effect of nanocross array plasmonic color filters and analyze the spatial optical crosstalk of each pixel in a Bayer array of a CIS with a pixel size of 1μm. It is found that the small pixel size deteriorates the filtering performance of nanocross color filters and induces substantial spatial color crosstalk. By integrating the plasmonic filters in the low Metal layer in standard CMOS process, the crosstalk reduces significantly, which is compatible to pigmented filters in a state-of-the-art backside illumination CIS.

Improved charge injection device and a focal plane interface electronics board for stellar tracking

NASA Technical Reports Server (NTRS)

Michon, G. J.; Burke, H. K.

1984-01-01

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

A 7 ke-SD-FWC 1.2 e-RMS Temporal Random Noise 128×256 Time-Resolved CMOS Image Sensor With Two In-Pixel SDs for Biomedical Applications.

PubMed

Seo, Min-Woong; Kawahito, Shoji

2017-12-01

A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.2e-rms at 20 fps with true correlated double sampling operation and fast intrinsic response less than 500 ps at 635 nm. The proposed imager has an effective pixel array of and a pixel size of . The sensor chip is fabricated by Dongbu HiTek 1P4M 0.11 CIS process.

Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors

PubMed Central

Perenzoni, Matteo; Pancheri, Lucio; Stoppa, David

2016-01-01

This paper reviews the state of the art of single-photon avalanche diode (SPAD) image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 μm) and high fill factor (>20%) as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved. PMID:27223284

Alternative Optimizations of X-ray TES Arrays: Soft X-rays, High Count Rates, and Mixed-Pixel Arrays

NASA Technical Reports Server (NTRS)

Kilbourne, C. A.; Bandler, S. R.; Brown, A.-D.; Chervenak, J. A.; Figueroa-Feliciano, E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Smith, S. J.

2007-01-01

We are developing arrays of superconducting transition-edge sensors (TES) for imaging spectroscopy telescopes such as the XMS on Constellation-X. While our primary focus has been on arrays that meet the XMS requirements (of which, foremost, is an energy resolution of 2.5 eV at 6 keV and a bandpass from approx. 0.3 keV to 12 keV), we have also investigated other optimizations that might be used to extend the XMS capabilities. In one of these optimizations, improved resolution below 1 keV is achieved by reducing the heat capacity. Such pixels can be based on our XMS-style TES's with the separate absorbers omitted. These pixels can added to an array with broadband response either as a separate array or interspersed, depending on other factors that include telescope design and science requirements. In one version of this approach, we have designed and fabricated a composite array of low-energy and broad-band pixels to provide high spectral resolving power over a broader energy bandpass than could be obtained with a single TES design. The array consists of alternating pixels with and without overhanging absorbers. To explore optimizations for higher count rates, we are also optimizing the design and operating temperature of pixels that are coupled to a solid substrate. We will present the performance of these variations and discuss other optimizations that could be used to enhance the XMS or enable other astrophysics experiments.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long.more » A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.« less

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Downsampling Photodetector Array with Windowing

NASA Technical Reports Server (NTRS)

Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

2012-01-01

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated for processing, is used to further reduce the computational requirements. The grouping of the designated pixel frame as the photon count information is sent one word at a time to the GA, the aggregation of the pixels in a window can be achieved by selecting only the designated pixel counts from the serial stream of photon counts, thereby obviating the need to store the entire frame of pixel count in the gate array. The pixel count se quence from each window can then be processed, forming lower-rate pixel statistics for each window. By having this processing occur in the GA rather than in the ASIC, future changes to the processing algorithm can be readily implemented. The high-bandwidth requirements of a photon counting array combined with the properties of the optical modulation being detected by the array present a unique problem that has not been addressed by current CCD or CMOS sensor array solutions.

Spectral X-Ray Diffraction using a 6 Megapixel Photon Counting Array Detector.

PubMed

Muir, Ryan D; Pogranichniy, Nicholas R; Muir, J Lewis; Sullivan, Shane Z; Battaile, Kevin P; Mulichak, Anne M; Toth, Scott J; Keefe, Lisa J; Simpson, Garth J

2015-03-12

Pixel-array array detectors allow single-photon counting to be performed on a massively parallel scale, with several million counting circuits and detectors in the array. Because the number of photoelectrons produced at the detector surface depends on the photon energy, these detectors offer the possibility of spectral imaging. In this work, a statistical model of the instrument response is used to calibrate the detector on a per-pixel basis. In turn, the calibrated sensor was used to perform separation of dual-energy diffraction measurements into two monochromatic images. Targeting applications include multi-wavelength diffraction to aid in protein structure determination and X-ray diffraction imaging.

Spectral x-ray diffraction using a 6 megapixel photon counting array detector

NASA Astrophysics Data System (ADS)

Muir, Ryan D.; Pogranichniy, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

2015-03-01

Pixel-array array detectors allow single-photon counting to be performed on a massively parallel scale, with several million counting circuits and detectors in the array. Because the number of photoelectrons produced at the detector surface depends on the photon energy, these detectors offer the possibility of spectral imaging. In this work, a statistical model of the instrument response is used to calibrate the detector on a per-pixel basis. In turn, the calibrated sensor was used to perform separation of dual-energy diffraction measurements into two monochromatic images. Targeting applications include multi-wavelength diffraction to aid in protein structure determination and X-ray diffraction imaging.

Array-scale performance of TES X-ray Calorimeters Suitable for Constellation-X

NASA Technical Reports Server (NTRS)

Kilbourne, C. A.; Bandler, S. R.; Brown, A. D.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Smith, S. J.;

Film cameras or digital sensors? The challenge ahead for aerial imaging

USGS Publications Warehouse

Light, D.L.

1996-01-01

Cartographic aerial cameras continue to play the key role in producing quality products for the aerial photography business, and specifically for the National Aerial Photography Program (NAPP). One NAPP photograph taken with cameras capable of 39 lp/mm system resolution can contain the equivalent of 432 million pixels at 11 ??m spot size, and the cost is less than $75 per photograph to scan and output the pixels on a magnetic storage medium. On the digital side, solid state charge coupled device linear and area arrays can yield quality resolution (7 to 12 ??m detector size) and a broader dynamic range. If linear arrays are to compete with film cameras, they will require precise attitude and positioning of the aircraft so that the lines of pixels can be unscrambled and put into a suitable homogeneous scene that is acceptable to an interpreter. Area arrays need to be much larger than currently available to image scenes competitive in size with film cameras. Analysis of the relative advantages and disadvantages of the two systems show that the analog approach is more economical at present. However, as arrays become larger, attitude sensors become more refined, global positioning system coordinate readouts become commonplace, and storage capacity becomes more affordable, the digital camera may emerge as the imaging system for the future. Several technical challenges must be overcome if digital sensors are to advance to where they can support mapping, charting, and geographic information system applications.

Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Fu, M.; Zhang, Y.; Yan, W.; Wang, M.

2017-01-01

The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm2.

Heat Sinking, Cross Talk, and Temperature Stability for Large, Close-Packed Arrays of Microcalorimeters

NASA Technical Reports Server (NTRS)

Imoto, Naoko; Bandler, SImon; Brekosky, Regis; Chervenak, James; Figueroa-Felicano, Enectali; Finkbeiner, Frederick; Kelley, Richard; Kilbourne, Caroline; Porter, Frederick; Sadleir, Jack;

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array withoutmore » any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.« less

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

Small pixel cross-talk MTF and its impact on MWIR sensor performance

NASA Astrophysics Data System (ADS)

Goss, Tristan M.; Willers, Cornelius J.

2017-05-01

As pixel sizes reduce in the development of modern High Definition (HD) Mid Wave Infrared (MWIR) detectors the interpixel cross-talk becomes increasingly difficult to regulate. The diffusion lengths required to achieve the quantum efficiency and sensitivity of MWIR detectors are typically longer than the pixel pitch dimension, and the probability of inter-pixel cross-talk increases as the pixel pitch/diffusion length fraction decreases. Inter-pixel cross-talk is most conveniently quantified by the focal plane array sampling Modulation Transfer Function (MTF). Cross-talk MTF will reduce the ideal sinc square pixel MTF that is commonly used when modelling sensor performance. However, cross-talk MTF data is not always readily available from detector suppliers, and since the origins of inter-pixel cross-talk are uniquely device and manufacturing process specific, no generic MTF models appear to satisfy the needs of the sensor designers and analysts. In this paper cross-talk MTF data has been collected from recent publications and the development for a generic cross-talk MTF model to fit this data is investigated. The resulting cross-talk MTF model is then included in a MWIR sensor model and the impact on sensor performance is evaluated in terms of the National Imagery Interoperability Rating Scale's (NIIRS) General Image Quality Equation (GIQE) metric for a range of fnumber/ detector pitch Fλ/d configurations and operating environments. By applying non-linear boost transfer functions in the signal processing chain, the contrast losses due to cross-talk may be compensated for. Boost transfer functions, however, also reduce the signal to noise ratio of the sensor. In this paper boost function limits are investigated and included in the sensor performance assessments.

The ABLE ACE wavefront sensor

NASA Astrophysics Data System (ADS)

Butts, Robert R.

1997-08-01

A low noise, high resolution Shack-Hartmann wavefront sensor was included in the ABLE-ACE instrument suite to obtain direct high resolution phase measurements of the 0.53 micrometers pulsed laser beam propagated through high altitude atmospheric turbulence. The wavefront sensor employed a Fired geometry using a lenslet array which provided approximately 17 sub-apertures across the pupil. The lenslets focused the light in each sub-aperture onto a 21 by 21 array of pixels in the camera focal plane with 8 pixels in the camera focal plane with 8 pixels across the central lobe of the diffraction limited spot. The goal of the experiment was to measure the effects of the turbulence in the free atmosphere on propagation, but the wavefront sensor also detected the aberrations induced by the aircraft boundary layer and the receiver aircraft internal beam path. Data analysis methods used to extract the desired atmospheric contribution to the phase measurements from the data corrupted by non-atmospheric aberrations are described. Approaches which were used included a reconstruction of the phase as a linear combination of Zernike polynomials coupled with optical estimator sand computation of structure functions of the sub-aperture slopes. The theoretical basis for the data analysis techniques is presented. Results are described, and comparisons with theory and simulations are shown. Estimates of average turbulence strength along the propagation path from the wavefront sensor showed good agreement with other sensor. The Zernike spectra calculated from the wavefront sensor data were consistent with the standard Kolmogorov model of turbulence.

A high-speed trapezoid image sensor design for continuous traffic monitoring at signalized intersection approaches.

DOT National Transportation Integrated Search

2014-10-01

The goal of this project is to monitor traffic flow continuously with an innovative camera system composed of a custom : designed image sensor integrated circuit (IC) containing trapezoid pixel array and camera system that is capable of : intelligent...

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Fabrication of Microstripline Wiring for Large Format Transition Edge Sensor Arrays

NASA Technical Reports Server (NTRS)

Chervenak, James A.; Adams, J. M.; Bailey, C. N.; Bandler, S.; Brekosky, R. P.; Eckart, M. E.; Erwin, A. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.;

Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.;

Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

NASA Astrophysics Data System (ADS)

Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Gruner, S. M.

2018-01-01

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

2016-10-06

FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

A robust color signal processing with wide dynamic range WRGB CMOS image sensor

NASA Astrophysics Data System (ADS)

Kawada, Shun; Kuroda, Rihito; Sugawa, Shigetoshi

2011-01-01

We have developed a robust color reproduction methodology by a simple calculation with a new color matrix using the formerly developed wide dynamic range WRGB lateral overflow integration capacitor (LOFIC) CMOS image sensor. The image sensor was fabricated through a 0.18 μm CMOS technology and has a 45 degrees oblique pixel array, the 4.2 μm effective pixel pitch and the W pixels. A W pixel was formed by replacing one of the two G pixels in the Bayer RGB color filter. The W pixel has a high sensitivity through the visible light waveband. An emerald green and yellow (EGY) signal is generated from the difference between the W signal and the sum of RGB signals. This EGY signal mainly includes emerald green and yellow lights. These colors are difficult to be reproduced accurately by the conventional simple linear matrix because their wave lengths are in the valleys of the spectral sensitivity characteristics of the RGB pixels. A new linear matrix based on the EGY-RGB signal was developed. Using this simple matrix, a highly accurate color processing with a large margin to the sensitivity fluctuation and noise has been achieved.

Infrared hyperspectral imaging miniaturized for UAV applications

NASA Astrophysics Data System (ADS)

Hinnrichs, Michele; Hinnrichs, Bradford; McCutchen, Earl

2017-02-01

Pacific Advanced Technology (PAT) has developed an infrared hyperspectral camera, both MWIR and LWIR, small enough to serve as a payload on a miniature unmanned aerial vehicles. The optical system has been integrated into the cold-shield of the sensor enabling the small size and weight of the sensor. This new and innovative approach to infrared hyperspectral imaging spectrometer uses micro-optics and will be explained in this paper. The micro-optics are made up of an area array of diffractive optical elements where each element is tuned to image a different spectral region on a common focal plane array. The lenslet array is embedded in the cold-shield of the sensor and actuated with a miniature piezo-electric motor. This approach enables rapid infrared spectral imaging with multiple spectral images collected and processed simultaneously each frame of the camera. This paper will present our optical mechanical design approach which results in an infrared hyper-spectral imaging system that is small enough for a payload on a mini-UAV or commercial quadcopter. Also, an example of how this technology can easily be used to quantify a hydrocarbon gas leak's volume and mass flowrates. The diffractive optical elements used in the lenslet array are blazed gratings where each lenslet is tuned for a different spectral bandpass. The lenslets are configured in an area array placed a few millimeters above the focal plane and embedded in the cold-shield to reduce the background signal normally associated with the optics. We have developed various systems using a different number of lenslets in the area array. Depending on the size of the focal plane and the diameter of the lenslet array will determine the spatial resolution. A 2 x 2 lenslet array will image four different spectral images of the scene each frame and when coupled with a 512 x 512 focal plane array will give spatial resolution of 256 x 256 pixel each spectral image. Another system that we developed uses a 4 x 4 lenslet array on a 1024 x 1024 pixel element focal plane array which gives 16 spectral images of 256 x 256 pixel resolution each frame.

GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Layer by layer: complex analysis with OCT technology

NASA Astrophysics Data System (ADS)

Florin, Christian

2017-03-01

Standard visualisation systems capture two- dimensional images and need more or less fast image processing systems. Now, the ASP Array (Actives sensor pixel array) opens a new world in imaging. On the ASP array, each pixel is provided with its own lens and with its own signal pre-processing. The OCT technology works in "real time" with highest accuracy. In the ASP array systems functionalities of the data acquisition and signal processing are even integrated onto the "pixel level". For the extraction of interferometric features, the time-of-flight principle (TOF) is used. The ASP architecture offers the demodulation of the optical signal within a pixel with up to 100 kHz and the reconstruction of the amplitude and its phase. The dynamics of image capture with the ASP array is higher by two orders of magnitude in comparison with conventional image sensors!!! The OCT- Technology allows a topographic imaging in real time with an extremely high geometric spatial resolution. The optical path length is generated by an axial movement of the reference mirror. The amplitude-modulated optical signal and the carrier frequency are proportional to the scan rate and contains the depth information. Each maximum of the signal envelope corresponds to a reflection (or scattering) within a sample. The ASP array produces at same time 300 * 300 axial Interferorgrams which touch each other on all sides. The signal demodulation for detecting the envelope is not limited by the frame rate of the ASP array in comparison to standard OCT systems. If an optical signal arrives to a pixel of the ASP Array an electrical signal is generated. The background is faded to saturation of pixels by high light intensity to avoid. The sampled signal is integrated continuously multiplied by a signal of the same frequency and two paths whose phase is shifted by 90 degrees from each other are averaged. The outputs of the two paths are routed to the PC, where the envelope amplitude and the phase calculate a three-dimensional tomographic image. For 3D measuring technique specially designed ASP- arrays with a very high image rate are available. If ASP- Arrays are coupled with the OCT method, layer thicknesses can be determined without contact, sealing seams can be inspected or geometrical shapes can be measured. From a stack of hundreds of single OCT images, interesting images can be selected and fed to the computer to analyse them.

Magnetically-coupled microcalorimeter arrays for x-ray astrophysics

NASA Astrophysics Data System (ADS)

Bandler, Simon

The "X-ray Surveyor" has been listed by NASA as one of the four major large mission concepts to be studied in the next Astrophysics Decadal Review in its preliminary list of large concepts. One of the key instruments on such a mission would be a very large format X-ray microcalorimeter array, with an array size of greater than 100 thousand pixels. Magnetically-coupled microcalorimeters (MCC) are one of the technologies with the greatest potential to meet the requirements of this mission, and this proposal is one to carry out research specifically to reach the goals of this vision. The "X-ray Surveyor" is a concept for a future mission that will make X-ray observations that are instrumental to understanding the quickly emerging population of galaxies and supermassive black holes at z ~10. The observations will trace the formation of galaxies and their assembly into large-scale structures starting from the earliest possible epochs. This mission would be observing baryons and large-scale physical processes outside of the very densest regions in the local Universe. This can be achieved with an X-ray observatory with similar angular resolution as Chandra but with significantly improved optic area and detector sensitivity. Chandra-scale angular resolution (1" or better) is essential in building more powerful, higher throughput observatories to avoid source confusion and remain photon-limited rather than background-limited. A prime consideration for the microcalorimeter camera on this type of mission is maintaining ~ 1 arcsec spatial resolution over the largest possible field of view, even if this means a slight trade-off against the spectral resolution. A uniform array of 1" pixels covering at least 5'x5' field of view is desired. To reduce the number of sensors read out, in geometries where extremely fine pitch (~50 microns) is desired, the most promising technologies are those in which a thermal sensor such an MCC can read out a sub-array of 20-25 individual 1'• pixels. Projections based on the current state of this technology indicate that less than 5 eV energy resolution can be achieved with this sort of geometry. Theoretically, magnetically-coupled microcalorimeters are well-equipped to achieve the very highest energy resolutions, especially when several absorbers are attached to each sensor, increasing the heat capacity. This program will build upon the work carried out by our group on metallic magnetic calorimeters (MMC) and Magnetic penetration thermometers (MPT) in the antecedent program. In this program we will carry out development in three main areas. First, we will develop sensor geometries that are optimized for reading out sub-arrays of pixels with a single sensor of the type that is likely desired by the "X-ray Surveyor". Second, we will further develop large-format arraying prototypes with the engineering of wiring-pixel approaches that are scalable to the large-format arrays that are needed. Third, we will develop the read-out technology that will be necessary, which utilizes the next generation of X-ray microcalorimeter read-out approach, a microwave multiplexing readout.

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

Development and test of an active pixel sensor detector for heliospheric imager on solar orbiter and solar probe plus

NASA Astrophysics Data System (ADS)

Korendyke, Clarence M.; Vourlidas, Angelos; Plunkett, Simon P.; Howard, Russell A.; Wang, Dennis; Marshall, Cheryl J.; Waczynski, Augustyn; Janesick, James J.; Elliott, Thomas; Tun, Samuel; Tower, John; Grygon, Mark; Keller, David; Clifford, Gregory E.

2013-10-01

The Naval Research Laboratory is developing next generation CMOS imaging arrays for the Solar Orbiter and Solar Probe Plus missions. The device development is nearly complete with flight device delivery scheduled for summer of 2013. The 4Kx4K mosaic array with 10micron pixels is well suited to the panoramic imaging required for the Solar Orbiter mission. The devices are robust (<100krad) and exhibit minimal performance degradation with respect to radiation. The device design and performance are described.

Preliminary performances measured on a CMOS long linear array for space application

NASA Astrophysics Data System (ADS)

Renard, Christophe; Artinian, Armand; Dantes, Didier; Lepage, Gérald; Diels, Wim

2017-11-01

This paper presents the design and the preliminary performances of a CMOS linear array, resulting from collaboration between Alcatel Alenia Space and Cypress Semiconductor BVBA, which takes advantage of emerging potentialities of CMOS technologies. The design of the sensor is presented: it includes 8000 panchromatic pixels with up to 25 rows used in TDI mode, and 4 lines of 2000 pixels for multispectral imaging. Main system requirements and detector tradeoffs are recalled, and the preliminary test results obtained with a first generation prototype are summarized and compared with predicted performances.

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications. PMID:25937684

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength

NASA Astrophysics Data System (ADS)

Tsuji, Hidenobu; Imaki, Masaharu; Kotake, Nobuki; Hirai, Akihito; Nakaji, Masaharu; Kameyama, Shumpei

2017-03-01

We demonstrate a range imaging pulsed laser sensor with two-dimensional scanning of a transmitted beam and a scanless receiver using a high-aspect avalanche photodiode (APD) array for the eye-safe wavelength. The system achieves a high frame rate and long-range imaging with a relatively simple sensor configuration. We developed a high-aspect APD array for the wavelength of 1.5 μm, a receiver integrated circuit, and a range and intensity detector. By combining these devices, we realized 160×120 pixels range imaging with a frame rate of 8 Hz at a distance of about 50 m.

Bonding techniques for hybrid active pixel sensors (HAPS)

NASA Astrophysics Data System (ADS)

Bigas, M.; Cabruja, E.; Lozano, M.

2007-05-01

A hybrid active pixel sensor (HAPS) consists of an array of sensing elements which is connected to an electronic read-out unit. The most used way to connect these two different devices is bump bonding. This interconnection technique is very suitable for these systems because it allows a very fine pitch and a high number of I/Os. However, there are other interconnection techniques available such as direct bonding. This paper, as a continuation of a review [M. Lozano, E. Cabruja, A. Collado, J. Santander, M. Ullan, Nucl. Instr. and Meth. A 473 (1-2) (2001) 95-101] published in 2001, presents an update of the different advanced bonding techniques available for manufacturing a hybrid active pixel detector.

Uncooled Terahertz real-time imaging 2D arrays developed at LETI: present status and perspectives

NASA Astrophysics Data System (ADS)

Simoens, François; Meilhan, Jérôme; Dussopt, Laurent; Nicolas, Jean-Alain; Monnier, Nicolas; Sicard, Gilles; Siligaris, Alexandre; Hiberty, Bruno

2017-05-01

As for other imaging sensor markets, whatever is the technology, the commercial spread of terahertz (THz) cameras has to fulfil simultaneously the criteria of high sensitivity and low cost and SWAP (size, weight and power). Monolithic silicon-based 2D sensors integrated in uncooled THz real-time cameras are good candidates to meet these requirements. Over the past decade, LETI has been studying and developing such arrays with two complimentary technological approaches, i.e. antenna-coupled silicon bolometers and CMOS Field Effect Transistors (FET), both being compatible to standard silicon microelectronics processes. LETI has leveraged its know-how in thermal infrared bolometer sensors in developing a proprietary architecture for THz sensing. High technological maturity has been achieved as illustrated by the demonstration of fast scanning of large field of view and the recent birth of a commercial camera. In the FET-based THz field, recent works have been focused on innovative CMOS read-out-integrated circuit designs. The studied architectures take advantage of the large pixel pitch to enhance the flexibility and the sensitivity: an embedded in-pixel configurable signal processing chain dramatically reduces the noise. Video sequences at 100 frames per second using our 31x31 pixels 2D Focal Plane Arrays (FPA) have been achieved. The authors describe the present status of these developments and perspectives of performance evolutions are discussed. Several experimental imaging tests are also presented in order to illustrate the capabilities of these arrays to address industrial applications such as non-destructive testing (NDT), security or quality control of food.

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to- Digital Conversion

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.; Fossum, Eric R.

1993-01-01

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS* 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e^- rms noise performance.

A PFM-based MWIR DROIC employing off-pixel fine conversion of photocharge to digital using integrated column ADCs

NASA Astrophysics Data System (ADS)

Abbasi, S.; Galioglu, A.; Shafique, A.; Ceylan, O.; Yazici, M.; Gurbuz, Y.

2017-02-01

A 32x32 prototype of a digital readout IC (DROIC) for medium-wave infrared focal plane arrays (MWIR IR-FPAs) is presented. The DROIC employs in-pixel photocurrent to digital conversion based on a pulse frequency modulation (PFM) loop and boasts a novel feature of off-pixel residue conversion using 10-bit column SAR ADCs. The remaining charge at the end of integration in typical PFM based digital pixel sensors is usually wasted. Previous works employing in-pixel extended counting methods make use of extra memory and counters to convert this left-over charge to digital, thereby performing fine conversion of the incident photocurrent. This results in a low quantization noise and hence keeps the readout noise low. However, focal plane arrays (FPAs) with small pixel pitch are constrained in pixel area, which makes it difficult to benefit from in-pixel extended counting circuitry. Thus, in this work, a novel approach to measure the residue outside the pixel using column -parallel SAR ADCs has been proposed. Moreover, a modified version of the conventional PFM based pixel has been designed to help hold the residue charge and buffer it to the column ADC. In addition to the 2D array of pixels, the prototype consists of 32 SAR ADCs, a timing controller block and a memory block to buffer the residue data coming out of the ADCs. The prototype has been designed and fabricated in 90nm CMOS.

A 256×256 low-light-level CMOS imaging sensor with digital CDS

NASA Astrophysics Data System (ADS)

Zou, Mei; Chen, Nan; Zhong, Shengyou; Li, Zhengfen; Zhang, Jicun; Yao, Li-bin

2016-10-01

In order to achieve high sensitivity for low-light-level CMOS image sensors (CIS), a capacitive transimpedance amplifier (CTIA) pixel circuit with a small integration capacitor is used. As the pixel and the column area are highly constrained, it is difficult to achieve analog correlated double sampling (CDS) to remove the noise for low-light-level CIS. So a digital CDS is adopted, which realizes the subtraction algorithm between the reset signal and pixel signal off-chip. The pixel reset noise and part of the column fixed-pattern noise (FPN) can be greatly reduced. A 256×256 CIS with CTIA array and digital CDS is implemented in the 0.35μm CMOS technology. The chip size is 7.7mm×6.75mm, and the pixel size is 15μm×15μm with a fill factor of 20.6%. The measured pixel noise is 24LSB with digital CDS in RMS value at dark condition, which shows 7.8× reduction compared to the image sensor without digital CDS. Running at 7fps, this low-light-level CIS can capture recognizable images with the illumination down to 0.1lux.

The Focal Plane Assembly for the Athena X-Ray Integral Field Unit Instrument

NASA Technical Reports Server (NTRS)

Jackson, B. D.; Van Weers, H.; van der Kuur, J.; den Hartog, R.; Akamatsu, H.; Argan, A.; Bandler, S. R.; Barbera, M.; Barret, D.; Bruijn, M. P.;

Characterization System of Multi-pixel Array TES Microcalorimeter

NASA Astrophysics Data System (ADS)

Yoshimoto, Shota; Maehata, Keisuke; Mitsuda, Kazuhisa; Yamanaka, Yoshihiro; Sakai, Kazuhiro; Nagayoshi, Kenichiro; Yamamoto, Ryo; Hayashi, Tasuku; Muramatsu, Haruka

We have constructed characterization system for 64-pixel array transition-edge sensor (TES) microcalorimeter using a 3He-4He dilution refrigerator (DR) with the cooling power of 60 µW at a temperature of 100 mK. A stick equipped with 384 of Manganin wires was inserted into the refrigerator to perform characteristic measurements of 64-pixel array TES microcalorimeter and superconducting quantum interference device (SQUID) array amplifiers. The stick and Manganin wires were thermally anchored at temperatures of 4 and 1 K with sufficient thermal contact. The cold end of the Manganin wires were thermally anchored and connected to CuNi clad NbTi wires at 0.7 K anchor. Then CuNi clad NbTi wires were wired to connectors placed on the holder mounted on the cold stage attached to the base plate of the mixing chamber. The heat flow to the cold stage through the installed wires was estimated to be 0.15 µW. In the operation test the characterization system maintained temperature below 100 mK.

First Tests of Prototype SCUBA-2 Superconducting Bolometer Array

NASA Astrophysics Data System (ADS)

Woodcraft, Adam L.; Ade, Peter A. R.; Bintley, Dan; Hunt, Cynthia L.; Sudiwala, Rashmi V.; Hilton, Gene C.; Irwin, Kent D.; Reintsema, Carl D.; Audley, Michael D.; Holland, Wayne S.; MacIntosh, Mike

2006-09-01

We present results of the first tests on a 1280 pixel superconducting bolometer array, a prototype for SCUBA-2, a sub-mm camera being built for the James Clerk Maxwell Telescope in Hawaii. The bolometers are TES (transition edge sensor) detectors; these take advantage of the large variation of resistance with temperature through the superconducting transition. To keep the number of wires reasonable, a multiplexed read-out is used. Each pixel is read out through an individual DC SQUID; room temperature electronics switch between rows in the array by biasing the appropriate SQUIDs in turn. Arrays of 100 SQUIDs in series for each column then amplify the output. Unlike previous TES arrays, the multiplexing elements are located beneath each pixel, making large arrays possible, but construction more challenging. The detectors are constructed from Mo/Cu bi-layers; this technique enables the transition temperature to be tuned using the proximity effect by choosing the thickness of the normal and superconducting materials. To achieve the required performance, the detectors are operated at a temperature of approximately 120 mK. We describe the results of a basic characterisation of the array, demonstrating that it is fully operational, and give the results of signal to noise measurements.

High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

PubMed

Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

2015-03-24

A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

High-density arrays of x-ray microcalorimeters for Constellation-X

NASA Astrophysics Data System (ADS)

Kilbourne, C. A.; Bandler, S. R.; Chervenak, J. A.; Figueroa-Feliciano, E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Saab, T.; Sadleir, J.

2005-12-01

We have been developing x-ray microcalorimeters for the Constellation-X mission. Devices based on superconducting transition edge sensors (TES) have demonstrated the potential to meet the Constellation-X requirements for spectral resolution, speed, and array scale (> 1000 pixels) in a close-packed geometry. In our part of the GSFC/NIST collaboration on this technology development, we have been concentrating on the fabrication of arrays of pixels suitable for the Constellation-X reference configuration. We have fabricated 8x8 arrays with 0.25-mm pixels arranged with 92% fill factor. The pixels are based on Mo/Au TES and Bi/Cu absorbers. We have achieved a resolution of 4.9 eV FWHM at 6 keV in such devices. Studies of the thermal transport in our Bi/Cu absorbers have shown that, while there is room for improvement, for 0.25 mm pixels our existing absorber design is adequate to avoid line-broadening from position dependence caused by thermal diffusion. In order to push closer to the 4-eV requirement and 2-eV goal at 6 keV, we are refining the design of the TES and the interface to the absorber. For the 32x32 arrays ultimately needed for Constellation-X, signal lead routing and heatsinking will drive the design. We have had early successes with experiments in electroplating electrical vias and thermal busses into micro-machined features in silicon substrates. The next steps will be fabricating arrays that have all of the essential features of the required flight design, testing, and then engineering a prototype array for optimum performance.

CMOS VLSI Active-Pixel Sensor for Tracking

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The diagonal-switch and memory addresses would be generated by the on-chip controller. The memory array would be large enough to hold differential signals acquired from all 8 windows during a frame period. Following the rapid sampling from all the windows, the contents of the memory array would be read out sequentially by use of a capacitive transimpedance amplifier (CTIA) at a maximum data rate of 10 MHz. This data rate is compatible with an update rate of almost 10 Hz, even in full-frame operation

High-resolution CCD imaging alternatives

NASA Astrophysics Data System (ADS)

Brown, D. L.; Acker, D. E.

1992-08-01

High resolution CCD color cameras have recently stimulated the interest of a large number of potential end-users for a wide range of practical applications. Real-time High Definition Television (HDTV) systems are now being used or considered for use in applications ranging from entertainment program origination through digital image storage to medical and scientific research. HDTV generation of electronic images offers significant cost and time-saving advantages over the use of film in such applications. Further in still image systems electronic image capture is faster and more efficient than conventional image scanners. The CCD still camera can capture 3-dimensional objects into the computing environment directly without having to shoot a picture on film develop it and then scan the image into a computer. 2. EXTENDING CCD TECHNOLOGY BEYOND BROADCAST Most standard production CCD sensor chips are made for broadcast-compatible systems. One popular CCD and the basis for this discussion offers arrays of roughly 750 x 580 picture elements (pixels) or a total array of approximately 435 pixels (see Fig. 1). FOR. A has developed a technique to increase the number of available pixels for a given image compared to that produced by the standard CCD itself. Using an inter-lined CCD with an overall spatial structure several times larger than the photo-sensitive sensor areas each of the CCD sensors is shifted in two dimensions in order to fill in spatial gaps between adjacent sensors.

Superresolution with the focused plenoptic camera

NASA Astrophysics Data System (ADS)

Georgiev, Todor; Chunev, Georgi; Lumsdaine, Andrew

2011-03-01

Digital images from a CCD or CMOS sensor with a color filter array must undergo a demosaicing process to combine the separate color samples into a single color image. This interpolation process can interfere with the subsequent superresolution process. Plenoptic superresolution, which relies on precise sub-pixel sampling across captured microimages, is particularly sensitive to such resampling of the raw data. In this paper we present an approach for superresolving plenoptic images that takes place at the time of demosaicing the raw color image data. Our approach exploits the interleaving provided by typical color filter arrays (e.g., Bayer filter) to further refine plenoptic sub-pixel sampling. Our rendering algorithm treats the color channels in a plenoptic image separately, which improves final superresolution by a factor of two. With appropriate plenoptic capture we show the theoretical possibility for rendering final images at full sensor resolution.

Phonon-mediated superconducting transition-edge sensor X-ray detectors for use in astronomy

NASA Astrophysics Data System (ADS)

Leman, Steven W.; Martinez-Galarce, Dennis S.; Brink, Paul L.; Cabrera, Blas; Castle, Joseph P.; Morse, Kathleen; Stern, Robert A.; Tomada, Astrid

2004-09-01

Superconducting Transition-Edge Sensors (TESs) are generating a great deal of interest in the areas of x-ray astrophysics and space science, particularly to develop them as large-array, imaging x-ray spectrometers. We are developing a novel concept that is based on position-sensitive macro-pixels placing TESs on the backside of a silicon or germanium absorber. Each x-ray absorbed will be position (X/δX and Y/δY ~ 100) and energy (E/δE ~ 1000) resolved via four distributed TES readouts. In the future, combining such macropixels with advances in multiplexing could lead to 30 by 30 arrays of close-packed macro-pixels equivalent to imaging instruments of 10 megapixels or more. We report on our progress to date and discuss its application to a plausible solar satellite mission and plans for future development.

Optimization of CMOS image sensor utilizing variable temporal multisampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability

NASA Astrophysics Data System (ADS)

Kabir, Salman; Smith, Craig; Armstrong, Frank; Barnard, Gerrit; Schneider, Alex; Guidash, Michael; Vogelsang, Thomas; Endsley, Jay

2018-03-01

Differential binary pixel technology is a threshold-based timing, readout, and image reconstruction method that utilizes the subframe partial charge transfer technique in a standard four-transistor (4T) pixel CMOS image sensor to achieve a high dynamic range video with stop motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21 dB. The method is verified in silicon using a Taiwan Semiconductor Manufacturing Company's 65 nm 1.1 μm pixel technology 1 megapixel test chip array and is compared with a traditional 4 × oversampling technique using full charge transfer to show low light SNR superiority of the presented technology.

New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

NASA Astrophysics Data System (ADS)

Weisfield, Richard L.; Hartney, Mark A.; Street, Robert A.; Apte, Raj B.

1998-07-01

This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer X 127 micrometer with an approximately page-size imaging area of 244 mm X 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm X 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance, readout amplifier design, optimized timing, and noise cancellation techniques, we achieve 1,000e to 2,000e of noise for the page size and large size arrays, respectively. This allows for true 12-bit performance and quantum limited images over a wide range of x-ray exposures. Various approaches to reducing line correlated noise have been implemented and will be discussed. Images documenting the improved performance will be presented. Avenues for improvement are under development, including higher resolution 97 micrometer pixel imagers, further improvements in detective quantum efficiency, and characterization of dynamic behavior.

Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

PubMed

Isikman, Serhan O; Greenbaum, Alon; Luo, Wei; Coskun, Ahmet F; Ozcan, Aydogan

2012-01-01

We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2). This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ± 50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3) across a sample volume of ~5 mm(3), which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode.

Imaging spectroscopy using embedded diffractive optical arrays

NASA Astrophysics Data System (ADS)

Hinnrichs, Michele; Hinnrichs, Bradford

2017-09-01

Pacific Advanced Technology (PAT) has developed an infrared hyperspectral camera based on diffractive optic arrays. This approach to hyperspectral imaging has been demonstrated in all three infrared bands SWIR, MWIR and LWIR. The hyperspectral optical system has been integrated into the cold-shield of the sensor enabling the small size and weight of this infrared hyperspectral sensor. This new and innovative approach to an infrared hyperspectral imaging spectrometer uses micro-optics that are made up of an area array of diffractive optical elements where each element is tuned to image a different spectral region on a common focal plane array. The lenslet array is embedded in the cold-shield of the sensor and actuated with a miniature piezo-electric motor. This approach enables rapid infrared spectral imaging with multiple spectral images collected and processed simultaneously each frame of the camera. This paper will present our optical mechanical design approach which results in an infrared hyper-spectral imaging system that is small enough for a payload on a small satellite, mini-UAV, commercial quadcopter or man portable. Also, an application of how this spectral imaging technology can easily be used to quantify the mass and volume flow rates of hydrocarbon gases. The diffractive optical elements used in the lenslet array are blazed gratings where each lenslet is tuned for a different spectral bandpass. The lenslets are configured in an area array placed a few millimeters above the focal plane and embedded in the cold-shield to reduce the background signal normally associated with the optics. The detector array is divided into sub-images covered by each lenslet. We have developed various systems using a different number of lenslets in the area array. Depending on the size of the focal plane and the diameter of the lenslet array will determine the number of simultaneous different spectral images collected each frame of the camera. A 2 x 2 lenslet array will image four different spectral images of the scene each frame and when coupled with a 512 x 512 focal plane array will give spatial resolution of 256 x 256 pixel each spectral image. Another system that we developed uses a 4 x 4 lenslet array on a 1024 x 1024 pixel element focal plane array which gives 16 spectral images of 256 x 256 pixel resolution each frame. This system spans the SWIR and MWIR bands with a single optical array and focal plane array.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

PubMed

Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

2018-01-03

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †

PubMed Central

Clarke, Andrew S.; Ivory, James; Holland, Andrew D.

2018-01-01

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths. PMID:29301379

Advanced Code-Division Multiplexers for Superconducting Detector Arrays

NASA Astrophysics Data System (ADS)

Irwin, K. D.; Cho, H. M.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Niemack, M. D.; Reintsema, C. D.; Schmidt, D. R.; Ullom, J. N.; Vale, L. R.

2012-06-01

Multiplexers based on the modulation of superconducting quantum interference devices are now regularly used in multi-kilopixel arrays of superconducting detectors for astrophysics, cosmology, and materials analysis. Over the next decade, much larger arrays will be needed. These larger arrays require new modulation techniques and compact multiplexer elements that fit within each pixel. We present a new in-focal-plane code-division multiplexer that provides multiplexing elements with the required scalability. This code-division multiplexer uses compact lithographic modulation elements that simultaneously multiplex both signal outputs and superconducting transition-edge sensor (TES) detector bias voltages. It eliminates the shunt resistor used to voltage bias TES detectors, greatly reduces power dissipation, allows different dc bias voltages for each TES, and makes all elements sufficiently compact to fit inside the detector pixel area. These in-focal plane code-division multiplexers can be combined with multi-GHz readout based on superconducting microresonators to scale to even larger arrays.

Wavelength scanning achieves pixel super-resolution in holographic on-chip microscopy

NASA Astrophysics Data System (ADS)

Luo, Wei; Göröcs, Zoltan; Zhang, Yibo; Feizi, Alborz; Greenbaum, Alon; Ozcan, Aydogan

2016-03-01

Lensfree holographic on-chip imaging is a potent solution for high-resolution and field-portable bright-field imaging over a wide field-of-view. Previous lensfree imaging approaches utilize a pixel super-resolution technique, which relies on sub-pixel lateral displacements between the lensfree diffraction patterns and the image sensor's pixel-array, to achieve sub-micron resolution under unit magnification using state-of-the-art CMOS imager chips, commonly used in e.g., mobile-phones. Here we report, for the first time, a wavelength scanning based pixel super-resolution technique in lensfree holographic imaging. We developed an iterative super-resolution algorithm, which generates high-resolution reconstructions of the specimen from low-resolution (i.e., under-sampled) diffraction patterns recorded at multiple wavelengths within a narrow spectral range (e.g., 10-30 nm). Compared with lateral shift-based pixel super-resolution, this wavelength scanning approach does not require any physical shifts in the imaging setup, and the resolution improvement is uniform in all directions across the sensor-array. Our wavelength scanning super-resolution approach can also be integrated with multi-height and/or multi-angle on-chip imaging techniques to obtain even higher resolution reconstructions. For example, using wavelength scanning together with multi-angle illumination, we achieved a halfpitch resolution of 250 nm, corresponding to a numerical aperture of 1. In addition to pixel super-resolution, the small scanning steps in wavelength also enable us to robustly unwrap phase, revealing the specimen's optical path length in our reconstructed images. We believe that this new wavelength scanning based pixel super-resolution approach can provide competitive microscopy solutions for high-resolution and field-portable imaging needs, potentially impacting tele-pathology applications in resource-limited-settings.

Compressive spectral testbed imaging system based on thin-film color-patterned filter arrays.

PubMed

Rueda, Hoover; Arguello, Henry; Arce, Gonzalo R

2016-11-20

Compressive spectral imaging systems can reliably capture multispectral data using far fewer measurements than traditional scanning techniques. In this paper, a thin-film patterned filter array-based compressive spectral imager is demonstrated, including its optical design and implementation. The use of a patterned filter array entails a single-step three-dimensional spatial-spectral coding on the input data cube, which provides higher flexibility on the selection of voxels being multiplexed on the sensor. The patterned filter array is designed and fabricated with micrometer pitch size thin films, referred to as pixelated filters, with three different wavelengths. The performance of the system is evaluated in terms of references measured by a commercially available spectrometer and the visual quality of the reconstructed images. Different distributions of the pixelated filters, including random and optimized structures, are explored.

Performance quantification of a millimeter-wavelength imaging system based on inexpensive glow-discharge-detector focal-plane array.

PubMed

Shilemay, Moshe; Rozban, Daniel; Levanon, Assaf; Yitzhaky, Yitzhak; Kopeika, Natan S; Yadid-Pecht, Orly; Abramovich, Amir

2013-03-01

Inexpensive millimeter-wavelength (MMW) optical digital imaging raises a challenge of evaluating the imaging performance and image quality because of the large electromagnetic wavelengths and pixel sensor sizes, which are 2 to 3 orders of magnitude larger than those of ordinary thermal or visual imaging systems, and also because of the noisiness of the inexpensive glow discharge detectors that compose the focal-plane array. This study quantifies the performances of this MMW imaging system. Its point-spread function and modulation transfer function were investigated. The experimental results and the analysis indicate that the image quality of this MMW imaging system is limited mostly by the noise, and the blur is dominated by the pixel sensor size. Therefore, the MMW image might be improved by oversampling, given that noise reduction is achieved. Demonstration of MMW image improvement through oversampling is presented.

Rad-hard Dual-threshold High-count-rate Silicon Pixel-array Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Adam

In this program, a Voxtel-led team demonstrates a full-format (192 x 192, 100-µm pitch, VX-810) high-dynamic-range x-ray photon-counting sensor—the Dual Photon Resolved Energy Acquisition (DUPREA) sensor. Within the Phase II program the following tasks were completed: 1) system analysis and definition of the DUPREA sensor requirements; 2) design, simulation, and fabrication of the full-format VX-810 ROIC design; 3) design, optimization, and fabrication of thick, fully depleted silicon photodiodes optimized for x-ray photon collection; 4) hybridization of the VX-810 ROIC to the photodiode array in the creation of the optically sensitive focal-plane array; 5) development of an evaluation camera; and 6)more » electrical and optical characterization of the sensor.« less

Coded aperture detector: an image sensor with sub 20-nm pixel resolution.

PubMed

Miyakawa, Ryan; Mayer, Rafael; Wojdyla, Antoine; Vannier, Nicolas; Lesser, Ian; Aron-Dine, Shifrah; Naulleau, Patrick

2014-08-11

We describe the coded aperture detector, a novel image sensor based on uniformly redundant arrays (URAs) with customizable pixel size, resolution, and operating photon energy regime. In this sensor, a coded aperture is scanned laterally at the image plane of an optical system, and the transmitted intensity is measured by a photodiode. The image intensity is then digitally reconstructed using a simple convolution. We present results from a proof-of-principle optical prototype, demonstrating high-fidelity image sensing comparable to a CCD. A 20-nm half-pitch URA fabricated by the Center for X-ray Optics (CXRO) nano-fabrication laboratory is presented that is suitable for high-resolution image sensing at EUV and soft X-ray wavelengths.

LinoSPAD: a time-resolved 256×1 CMOS SPAD line sensor system featuring 64 FPGA-based TDC channels running at up to 8.5 giga-events per second

NASA Astrophysics Data System (ADS)

Burri, Samuel; Homulle, Harald; Bruschini, Claudio; Charbon, Edoardo

2016-04-01

LinoSPAD is a reconfigurable camera sensor with a 256×1 CMOS SPAD (single-photon avalanche diode) pixel array connected to a low cost Xilinx Spartan 6 FPGA. The LinoSPAD sensor's line of pixels has a pitch of 24 μm and 40% fill factor. The FPGA implements an array of 64 TDCs and histogram engines capable of processing up to 8.5 giga-photons per second. The LinoSPAD sensor measures 1.68 mm×6.8 mm and each pixel has a direct digital output to connect to the FPGA. The chip is bonded on a carrier PCB to connect to the FPGA motherboard. 64 carry chain based TDCs sampled at 400 MHz can generate a timestamp every 7.5 ns with a mean time resolution below 25 ps per code. The 64 histogram engines provide time-of-arrival histograms covering up to 50 ns. An alternative mode allows the readout of 28 bit timestamps which have a range of up to 4.5 ms. Since the FPGA TDCs have considerable non-linearity we implemented a correction module capable of increasing histogram linearity at real-time. The TDC array is interfaced to a computer using a super-speed USB3 link to transfer over 150k histograms per second for the 12.5 ns reference period used in our characterization. After characterization and subsequent programming of the post-processing we measure an instrument response histogram shorter than 100 ps FWHM using a strong laser pulse with 50 ps FWHM. A timing resolution that when combined with the high fill factor makes the sensor well suited for a wide variety of applications from fluorescence lifetime microscopy over Raman spectroscopy to 3D time-of-flight.

Evaluation of an innovative color sensor for space application

NASA Astrophysics Data System (ADS)

Cessa, Virginie; Beauvivre, Stéphane; Pittet, Jacques; Dougnac, Virgile; Fasano, M.

2017-11-01

We present in this paper an evaluation of an innovative image sensor that provides color information without the need of organic filters. The sensor is a CMOS array with more than 4 millions pixels which filters the incident photons into R, G, and B channels, delivering the full resolution in color. Such a sensor, combining high performance with low power consumption, is of high interest for future space missions. The paper presents the characteristics of the detector as well as the first results of environmental testing.

Optical Demonstration of a Medical Imaging System with an EMCCD-Sensor Array for Use in a High Resolution Dynamic X-ray Imager

PubMed Central

Qu, Bin; Huang, Ying; Wang, Weiyuan; Sharma, Prateek; Kuhls-Gilcrist, Andrew T.; Cartwright, Alexander N.; Titus, Albert H.; Bednarek, Daniel R.; Rudin, Stephen

2011-01-01

Use of an extensible array of Electron Multiplying CCDs (EMCCDs) in medical x-ray imager applications was demonstrated for the first time. The large variable electronic-gain (up to 2000) and small pixel size of EMCCDs provide effective suppression of readout noise compared to signal, as well as high resolution, enabling the development of an x-ray detector with far superior performance compared to conventional x-ray image intensifiers and flat panel detectors. We are developing arrays of EMCCDs to overcome their limited field of view (FOV). In this work we report on an array of two EMCCD sensors running simultaneously at a high frame rate and optically focused on a mammogram film showing calcified ducts. The work was conducted on an optical table with a pulsed LED bar used to provide a uniform diffuse light onto the film to simulate x-ray projection images. The system can be selected to run at up to 17.5 frames per second or even higher frame rate with binning. Integration time for the sensors can be adjusted from 1 ms to 1000 ms. Twelve-bit correlated double sampling AD converters were used to digitize the images, which were acquired by a National Instruments dual-channel Camera Link PC board in real time. A user-friendly interface was programmed using LabVIEW to save and display 2K × 1K pixel matrix digital images. The demonstration tiles a 2 × 1 array to acquire increased-FOV stationary images taken at different gains and fluoroscopic-like videos recorded by scanning the mammogram simultaneously with both sensors. The results show high resolution and high dynamic range images stitched together with minimal adjustments needed. The EMCCD array design allows for expansion to an M×N array for arbitrarily larger FOV, yet with high resolution and large dynamic range maintained. PMID:23505330

Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy

NASA Technical Reports Server (NTRS)

Myers, Richard A.

2008-01-01

An improved sensor assembly has been developed for astronomical imaging at photon energies ranging from 1 to 100 keV. The assembly includes a thallium-doped cesium iodide scintillator divided into pixels and coupled to an array of high-gain avalanche photodiodes (APDs). Optionally, the array of APDs can be operated without the scintillator to detect photons at energies below 15 keV. The array of APDs is connected to compact electronic readout circuitry that includes, among other things, 64 independent channels for detection of photons in various energy ranges, up to a maximum energy of 100 keV, at a count rate up to 3 kHz. The readout signals are digitized and processed by imaging software that performs "on-the-fly" analysis. The sensor assembly has been integrated into an imaging spectrometer, along with a pair of coded apertures (Fresnel zone plates) that are used in conjunction with the pixel layout to implement a shadow-masking technique to obtain relatively high spatial resolution without having to use extremely small pixels. Angular resolutions of about 20 arc-seconds have been measured. Thus, for example, the imaging spectrometer can be used to (1) determine both the energy spectrum of a distant x-ray source and the angular deviation of the source from the nominal line of sight of an x-ray telescope in which the spectrometer is mounted or (2) study the spatial and temporal development of solar flares, repeating - ray bursters, and other phenomena that emit transient radiation in the hard-x-ray/soft- -ray region of the electromagnetic spectrum.

Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array.

PubMed

Choi, Changsoon; Choi, Moon Kee; Liu, Siyi; Kim, Min Sung; Park, Ok Kyu; Im, Changkyun; Kim, Jaemin; Qin, Xiaoliang; Lee, Gil Ju; Cho, Kyoung Won; Kim, Myungbin; Joh, Eehyung; Lee, Jongha; Son, Donghee; Kwon, Seung-Hae; Jeon, Noo Li; Song, Young Min; Lu, Nanshu; Kim, Dae-Hyeong

2017-11-21

Soft bioelectronic devices provide new opportunities for next-generation implantable devices owing to their soft mechanical nature that leads to minimal tissue damages and immune responses. However, a soft form of the implantable optoelectronic device for optical sensing and retinal stimulation has not been developed yet because of the bulkiness and rigidity of conventional imaging modules and their composing materials. Here, we describe a high-density and hemispherically curved image sensor array that leverages the atomically thin MoS 2 -graphene heterostructure and strain-releasing device designs. The hemispherically curved image sensor array exhibits infrared blindness and successfully acquires pixelated optical signals. We corroborate the validity of the proposed soft materials and ultrathin device designs through theoretical modeling and finite element analysis. Then, we propose the ultrathin hemispherically curved image sensor array as a promising imaging element in the soft retinal implant. The CurvIS array is applied as a human eye-inspired soft implantable optoelectronic device that can detect optical signals and apply programmed electrical stimulation to optic nerves with minimum mechanical side effects to the retina.

Fabrication of X-ray Microcalorimeter Focal Planes Composed of Two Distinct Pixel Types.

PubMed

Wassell, E J; Adams, J S; Bandler, S R; Betancourt-Martinez, G L; Chiao, M P; Chang, M P; Chervenak, J A; Datesman, A M; Eckart, M E; Ewin, A J; Finkbeiner, F M; Ha, J Y; Kelley, R; Kilbourne, C A; Miniussi, A R; Sakai, K; Porter, F; Sadleir, J E; Smith, S J; Wakeham, N A; Yoon, W

2017-06-01

We are developing superconducting transition-edge sensor (TES) microcalorimeter focal planes for versatility in meeting specifications of X-ray imaging spectrometers including high count-rate, high energy resolution, and large field-of-view. In particular, a focal plane composed of two sub-arrays: one of fine-pitch, high count-rate devices and the other of slower, larger pixels with similar energy resolution, offers promise for the next generation of astrophysics instruments, such as the X-ray Integral Field Unit (X-IFU) instrument on the European Space Agency's Athena mission. We have based the sub-arrays of our current design on successful pixel designs that have been demonstrated separately. Pixels with an all gold X-ray absorber on 50 and 75 micron scales where the Mo/Au TES sits atop a thick metal heatsinking layer have shown high resolution and can accommodate high count-rates. The demonstrated larger pixels use a silicon nitride membrane for thermal isolation, thinner Au and an added bismuth layer in a 250 micron square absorber. To tune the parameters of each sub-array requires merging the fabrication processes of the two detector types. We present the fabrication process for dual production of different X-ray absorbers on the same substrate, thick Au on the small pixels and thinner Au with a Bi capping layer on the larger pixels to tune their heat capacities. The process requires multiple electroplating and etching steps, but the absorbers are defined in a single ion milling step. We demonstrate methods for integrating heatsinking of the two types of pixel into the same focal plane consistent with the requirements for each sub-array, including the limiting of thermal crosstalk. We also discuss fabrication process modifications for tuning the intrinsic transition temperature (T c ) of the bilayers for the different device types through variation of the bilayer thicknesses. The latest results on these "hybrid" arrays will be presented.

Fabrication of X-ray Microcalorimeter Focal Planes Composed of Two Distinct Pixel Types

PubMed Central

Wassell, E. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chiao, M. P.; Chang, M. P.; Chervenak, J. A.; Datesman, A. M.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Ha, J. Y.; Kelley, R.; Kilbourne, C. A.; Miniussi, A. R.; Sakai, K.; Porter, F.; Sadleir, J. E.; Smith, S. J.; Wakeham, N. A.; Yoon, W.

2017-01-01

We are developing superconducting transition-edge sensor (TES) microcalorimeter focal planes for versatility in meeting specifications of X-ray imaging spectrometers including high count-rate, high energy resolution, and large field-of-view. In particular, a focal plane composed of two sub-arrays: one of fine-pitch, high count-rate devices and the other of slower, larger pixels with similar energy resolution, offers promise for the next generation of astrophysics instruments, such as the X-ray Integral Field Unit (X-IFU) instrument on the European Space Agency’s Athena mission. We have based the sub-arrays of our current design on successful pixel designs that have been demonstrated separately. Pixels with an all gold X-ray absorber on 50 and 75 micron scales where the Mo/Au TES sits atop a thick metal heatsinking layer have shown high resolution and can accommodate high count-rates. The demonstrated larger pixels use a silicon nitride membrane for thermal isolation, thinner Au and an added bismuth layer in a 250 micron square absorber. To tune the parameters of each sub-array requires merging the fabrication processes of the two detector types. We present the fabrication process for dual production of different X-ray absorbers on the same substrate, thick Au on the small pixels and thinner Au with a Bi capping layer on the larger pixels to tune their heat capacities. The process requires multiple electroplating and etching steps, but the absorbers are defined in a single ion milling step. We demonstrate methods for integrating heatsinking of the two types of pixel into the same focal plane consistent with the requirements for each sub-array, including the limiting of thermal crosstalk. We also discuss fabrication process modifications for tuning the intrinsic transition temperature (Tc) of the bilayers for the different device types through variation of the bilayer thicknesses. The latest results on these “hybrid” arrays will be presented. PMID:28804229

Performance of the QWIP Focal Plane Arrays for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Waczynski, A.; La, A.; Sundaram, M.; Costard, E.; Jhabvala, C.; Kan, E.; Kahle, D.; Foltz, R.;

Laser doppler blood flow imaging using a CMOS imaging sensor with on-chip signal processing.

PubMed

He, Diwei; Nguyen, Hoang C; Hayes-Gill, Barrie R; Zhu, Yiqun; Crowe, John A; Gill, Cally; Clough, Geraldine F; Morgan, Stephen P

2013-09-18

The first fully integrated 2D CMOS imaging sensor with on-chip signal processing for applications in laser Doppler blood flow (LDBF) imaging has been designed and tested. To obtain a space efficient design over 64 × 64 pixels means that standard processing electronics used off-chip cannot be implemented. Therefore the analog signal processing at each pixel is a tailored design for LDBF signals with balanced optimization for signal-to-noise ratio and silicon area. This custom made sensor offers key advantages over conventional sensors, viz. the analog signal processing at the pixel level carries out signal normalization; the AC amplification in combination with an anti-aliasing filter allows analog-to-digital conversion with a low number of bits; low resource implementation of the digital processor enables on-chip processing and the data bottleneck that exists between the detector and processing electronics has been overcome. The sensor demonstrates good agreement with simulation at each design stage. The measured optical performance of the sensor is demonstrated using modulated light signals and in vivo blood flow experiments. Images showing blood flow changes with arterial occlusion and an inflammatory response to a histamine skin-prick demonstrate that the sensor array is capable of detecting blood flow signals from tissue.

Real time three-dimensional space video rate sensors for millimeter waves imaging based very inexpensive plasma LED lamps

NASA Astrophysics Data System (ADS)

Levanon, Assaf; Yitzhaky, Yitzhak; Kopeika, Natan S.; Rozban, Daniel; Abramovich, Amir

2014-10-01

In recent years, much effort has been invested to develop inexpensive but sensitive Millimeter Wave (MMW) detectors that can be used in focal plane arrays (FPAs), in order to implement real time MMW imaging. Real time MMW imaging systems are required for many varied applications in many fields as homeland security, medicine, communications, military products and space technology. It is mainly because this radiation has high penetration and good navigability through dust storm, fog, heavy rain, dielectric materials, biological tissue, and diverse materials. Moreover, the atmospheric attenuation in this range of the spectrum is relatively low and the scattering is also low compared to NIR and VIS. The lack of inexpensive room temperature imaging systems makes it difficult to provide a suitable MMW system for many of the above applications. In last few years we advanced in research and development of sensors using very inexpensive (30-50 cents) Glow Discharge Detector (GDD) plasma indicator lamps as MMW detectors. This paper presents three kinds of GDD sensor based lamp Focal Plane Arrays (FPA). Those three kinds of cameras are different in the number of detectors, scanning operation, and detection method. The 1st and 2nd generations are 8 × 8 pixel array and an 18 × 2 mono-rail scanner array respectively, both of them for direct detection and limited to fixed imaging. The last designed sensor is a multiplexing frame rate of 16x16 GDD FPA. It permits real time video rate imaging of 30 frames/ sec and comprehensive 3D MMW imaging. The principle of detection in this sensor is a frequency modulated continuous wave (FMCW) system while each of the 16 GDD pixel lines is sampled simultaneously. Direct detection is also possible and can be done with a friendly user interface. This FPA sensor is built over 256 commercial GDD lamps with 3 mm diameter International Light, Inc., Peabody, MA model 527 Ne indicator lamps as pixel detectors. All three sensors are fully supported by software Graphical Unit Interface (GUI). They were tested and characterized through different kinds of optical systems for imaging applications, super resolution, and calibration methods. Capability of the 16x16 sensor is to employ a chirp radar like method to produced depth and reflectance information in the image. This enables 3-D MMW imaging in real time with video frame rate. In this work we demonstrate different kinds of optical imaging systems. Those systems have capability of 3-D imaging for short range and longer distances to at least 10-20 meters.

An inverter-based capacitive trans-impedance amplifier readout with offset cancellation and temporal noise reduction for IR focal plane array

NASA Astrophysics Data System (ADS)

Chen, Hsin-Han; Hsieh, Chih-Cheng

2013-09-01

This paper presents a readout integrated circuit (ROIC) with inverter-based capacitive trans-impedance amplifier (CTIA) and pseudo-multiple sampling technique for infrared focal plane array (IRFPA). The proposed inverter-based CTIA with a coupling capacitor [1], executing auto-zeroing technique to cancel out the varied offset voltage from process variation, is used to substitute differential amplifier in conventional CTIA. The tunable detector bias is applied from a global external bias before exposure. This scheme not only retains stable detector bias voltage and signal injection efficiency, but also reduces the pixel area as well. Pseudo-multiple sampling technique [2] is adopted to reduce the temporal noise of readout circuit. The noise reduction performance is comparable to the conventional multiple sampling operation without need of longer readout time proportional to the number of samples. A CMOS image sensor chip with 55×65 pixel array has been fabricated in 0.18um CMOS technology. It achieves a 12um×12um pixel size, a frame rate of 72 fps, a power-per-pixel of 0.66uW/pixel, and a readout temporal noise of 1.06mVrms (16 times of pseudo-multiple sampling), respectively.

Characterization of Kilopixel TES detector arrays for PIPER

NASA Astrophysics Data System (ADS)

Datta, Rahul; Ade, Peter; Benford, Dominic; Bennett, Charles; Chuss, David; Costen, Nicholas; Coughlin, Kevin; Dotson, Jessie; Eimer, Joseph; Fixsen, Dale; Gandilo, Natalie; Halpern, Mark; Essinger-Hileman, Thomas; Hilton, Gene; Hinshaw, Gary; Irwin, Kent; Jhabvala, Christine; Kimball, Mark; Kogut, Al; Lazear, Justin; Lowe, Luke; Manos, George; McMahon, Jeff; Miller, Timothy; Mirel, Paul; Moseley, Samuel Harvey; Pawlyk, Samuel; Rodriguez, Samelys; Sharp, Elmer; Shirron, Peter; Staguhn, Johannes G.; Sullivan, Dan; Switzer, Eric; Taraschi, Peter; Tucker, Carole; Walts, Alexander; Wollack, Edward

2018-01-01

The Primordial Inflation Polarization ExploreR (PIPER) is a balloon-borne instrument optimized to measure the polarization of the Cosmic Microwave Background (CMB) at large angular scales. It will map 85% of the sky in four frequency bands centered at 200, 270, 350, and 600 GHz to characterize dust foregrounds and constrain the tensor-to-scalar ratio, r. The sky is imaged on to 32x40 pixel arrays of time-domain multiplexed Transition-Edge Sensor (TES) bolometers operating at a bath temperature of 100 mK to achieve background-limited sensitivity. Each kilopixel array is indium-bump-bonded to a 2D superconducting quantum interference device (SQUID) time-domain multiplexer (MUX) chip and read out by warm electronics. Each pixel measures total incident power over a frequency band defined by bandpass filters in front of the array, while polarization sensitivity is provided by the upstream Variable-delay Polarization Modulators (VPMs) and analyzer grids. We present measurements of the detector parameters from the laboratory characterization of the first kilopixel science array for PIPER including transition temperature, saturation power, thermal conductivity, time constant, and noise performance. We also describe the testing of the 2D MUX chips, optimization of the integrated readout parameters, and the overall pixel yield of the array. The first PIPER science flight is planned for June 2018 from Palestine, Texas.

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

PubMed

Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

2014-07-07

Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, x-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications.

Active pixel sensor array as a detector for electron microscopy.

PubMed

Milazzo, Anna-Clare; Leblanc, Philippe; Duttweiler, Fred; Jin, Liang; Bouwer, James C; Peltier, Steve; Ellisman, Mark; Bieser, Fred; Matis, Howard S; Wieman, Howard; Denes, Peter; Kleinfelder, Stuart; Xuong, Nguyen-Huu

2005-09-01

A new high-resolution recording device for transmission electron microscopy (TEM) is urgently needed. Neither film nor CCD cameras are systems that allow for efficient 3-D high-resolution particle reconstruction. We tested an active pixel sensor (APS) array as a replacement device at 200, 300, and 400 keV using a JEOL JEM-2000 FX II and a JEM-4000 EX electron microscope. For this experiment, we used an APS prototype with an area of 64 x 64 pixels of 20 microm x 20 microm pixel pitch. Single-electron events were measured by using very low beam intensity. The histogram of the incident electron energy deposited in the sensor shows a Landau distribution at low energies, as well as unexpected events at higher absorbed energies. After careful study, we concluded that backscattering in the silicon substrate and re-entering the sensitive epitaxial layer a second time with much lower speed caused the unexpected events. Exhaustive simulation experiments confirmed the existence of these back-scattered electrons. For the APS to be usable, the back-scattered electron events must be eliminated, perhaps by thinning the substrate to less than 30 microm. By using experimental data taken with an APS chip with a standard silicon substrate (300 microm) and adjusting the results to take into account the effect of a thinned silicon substrate (30 microm), we found an estimate of the signal-to-noise ratio for a back-thinned detector in the energy range of 200-400 keV was about 10:1 and an estimate for the spatial resolution was about 10 microm.

X-ray characterization of a multichannel smart-pixel array detector.

PubMed

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

2016-01-01

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

Color filter array design based on a human visual model

NASA Astrophysics Data System (ADS)

Parmar, Manu; Reeves, Stanley J.

2004-05-01

To reduce cost and complexity associated with registering multiple color sensors, most consumer digital color cameras employ a single sensor. A mosaic of color filters is overlaid on a sensor array such that only one color channel is sampled per pixel location. The missing color values must be reconstructed from available data before the image is displayed. The quality of the reconstructed image depends fundamentally on the array pattern and the reconstruction technique. We present a design method for color filter array patterns that use red, green, and blue color channels in an RGB array. A model of the human visual response for luminance and opponent chrominance channels is used to characterize the perceptual error between a fully sampled and a reconstructed sparsely-sampled image. Demosaicking is accomplished using Wiener reconstruction. To ensure that the error criterion reflects perceptual effects, reconstruction is done in a perceptually uniform color space. A sequential backward selection algorithm is used to optimize the error criterion to obtain the sampling arrangement. Two different types of array patterns are designed: non-periodic and periodic arrays. The resulting array patterns outperform commonly used color filter arrays in terms of the error criterion.

Uncooled infrared focal plane array imaging in China

NASA Astrophysics Data System (ADS)

Lei, Shuyu

2015-06-01

This article reviews the development of uncooled infrared focal plane array (UIFPA) imaging in China in the past decade. Sensors based on optical or electrical read-out mechanism were developed but the latter dominates the market. In resistive bolometers, VOx and amorphous silicon are still the two major thermal-sensing materials. The specifications of the IRFPA made by different manufactures were collected and compared. Currently more than five Chinese companies and institutions design and fabricate uncooled infrared focal plane array. Some devices have sensitivity as high as 30 mK; the largest array for commercial products is 640×512 and the smallest pixel size is 17 μm. Emphasis is given on the pixel MEMS design, ROIC design, fabrication, and packaging of the IRFPA manufactured by GWIC, especially on design for high sensitivities, low noise, better uniformity and linearity, better stabilization for whole working temperature range, full-digital design, etc.

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass.

PubMed

Han, Guoliang; Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-11-14

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0 . 15 ∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation.

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass

PubMed Central

Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-01-01

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0.15∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation. PMID:29135927

Ultrahigh Detective Heterogeneous Photosensor Arrays with In-Pixel Signal Boosting Capability for Large-Area and Skin-Compatible Electronics.

PubMed

Kim, Jaehyun; Kim, Jaekyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Myungwon; Moon, Juhyuk; Yang, Lin; Kim, Myung-Gil; Kim, Yong-Hoon; Park, Sung Kyu

2016-04-01

An ultra-thin and large-area skin-compatible heterogeneous organic/metal-oxide photosensor array is demonstrated which is capable of sensing and boosting signals with high detectivity and signal-to-noise ratio. For the realization of ultra-flexible and high-sensitive heterogeneous photosensor arrays on a polyimide substrate having organic sensor arrays and metal-oxide boosting circuitry, solution-processing and room-temperature alternating photochemical conversion routes are applied. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Joel T.; Becker, Julian; Shanks, Katherine S.

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that formmore » when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.« less

Optical and x-ray characterization of two novel CMOS image sensors

NASA Astrophysics Data System (ADS)

Bohndiek, Sarah E.; Arvanitis, Costas D.; Venanzi, Cristian; Royle, Gary J.; Clark, Andy T.; Crooks, Jamie P.; Prydderch, Mark L.; Turchetta, Renato; Blue, Andrew; Speller, Robert D.

2007-02-01

A UK consortium (MI3) has been founded to develop advanced CMOS pixel designs for scientific applications. Vanilla, a 520x520 array of 25μm pixels benefits from flushed reset circuitry for low noise and random pixel access for region of interest (ROI) readout. OPIC, a 64x72 test structure array of 30μm digital pixels has thresholding capabilities for sparse readout at 3,700fps. Characterization is performed with both optical illumination and x-ray exposure via a scintillator. Vanilla exhibits 34+/-3e - read noise, interactive quantum efficiency of 54% at 500nm and can read a 6x6 ROI at 24,395fps. OPIC has 46+/-3e - read noise and a wide dynamic range of 65dB due to high full well capacity. Based on these characterization studies, Vanilla could be utilized in applications where demands include high spectral response and high speed region of interest readout while OPIC could be used for high speed, high dynamic range imaging.

MT3825BA: a 384×288-25µm ROIC for uncooled microbolometer FPAs

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Gulden, M. Ali; Bayhan, Nusret; Incedere, O. Samet; Soyer, S. Tuncer; Ustundag, Cem M. B.; Isikhan, Murat; Kocak, Serhat; Turan, Ozge; Yalcin, Cem; Akin, Tayfun

2014-06-01

This paper reports the development of a new microbolometer Readout Integrated Circuit (ROIC) called MT3825BA. It has a format of 384 × 288 and a pixel pitch of 25μm. MT3825BA is Mikro-Tasarim's second microbolometer ROIC product, which is developed specifically for resistive surface micro-machined microbolometer detector arrays using high-TCR pixel materials, such as VOx and a-Si. MT3825BA has a system-on-chip architecture, where all the timing, biasing, and pixel non-uniformity correction (NUC) operations in the ROIC are applied using on-chip circuitry simplifying the use and system integration of this ROIC. The ROIC is designed to support pixel resistance values ranging from 30 KΩ to 100 KΩ. MT3825BA is operated using conventional row based readout method, where pixels in the array are read out in a row-by-row basis, where the applied bias for each pixel in a given row is updated at the beginning of each line period according to the applied line based NUC data. The NUC data is applied continuously in a row-by-row basis using the serial programming interface, which is also used to program user configurable features of the ROIC, such as readout gain, integration time, and number of analog video outputs. MT3825BA has a total of 4 analog video outputs and 2 analog reference outputs, placed at the top and bottom of the ROIC, which can be programmed to operate in the 1, 2, and 4-output modes, supporting frames rates well above 60 fps at a 3 MHz pixel output rate. The pixels in the array are read out with respect to reference pixels implemented above and below actual array pixels. The bias voltage of the pixels can be programmed over a 1.0 V range to compensate for the changes in the detector resistance values due to the variations coming from the manufacturing process or changes in the operating temperature. The ROIC has an on-chip integrated temperature sensor with a sensitivity of better than 5 mV / K, and the output of the temperature sensor can be read out the output as part of the analog video stream. MT3825BA can be used to build a microbolometer FPAs with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a detector resistance value up to 100 KΩ, a high TCR value (< 2 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). MT3825BA measures 13.0 mm × 13.5 mm and is fabricated on 200 mm CMOS wafers. The microbolometer ROIC wafers are engineered to have flat surface finish to simplify the wafer level detector fabrication and wafer level vacuum packaging (WLVP). The ROIC runs on 3.3 V analog and 1.8 V digital supplies, and dissipates less than 85 mW in the 2-output mode at 30 fps. Mikro-Tasarim provides tested ROIC wafers and offers compact test electronics and software for its ROIC customers to shorten their FPA and camera development cycles.

Data Processing for a High Resolution Preclinical PET Detector Based on Philips DPC Digital SiPMs

NASA Astrophysics Data System (ADS)

Schug, David; Wehner, Jakob; Goldschmidt, Benjamin; Lerche, Christoph; Dueppenbecker, Peter Michael; Hallen, Patrick; Weissler, Bjoern; Gebhardt, Pierre; Kiessling, Fabian; Schulz, Volkmar

2015-06-01

In positron emission tomography (PET) systems, light sharing techniques are commonly used to readout scintillator arrays consisting of scintillation elements, which are smaller than the optical sensors. The scintillating element is then identified evaluating the signal heights in the readout channels using statistical algorithms, the center of gravity (COG) algorithm being the simplest and mostly used one. We propose a COG algorithm with a fixed number of input channels in order to guarantee a stable calculation of the position. The algorithm is implemented and tested with the raw detector data obtained with the Hyperion-II D preclinical PET insert which uses Philips Digital Photon Counting's (PDPC) digitial SiPMs. The gamma detectors use LYSO scintillator arrays with 30 ×30 crystals of 1 ×1 ×12 mm3 in size coupled to 4 ×4 PDPC DPC 3200-22 sensors (DPC) via a 2-mm-thick light guide. These self-triggering sensors are made up of 2 ×2 pixels resulting in a total of 64 readout channels. We restrict the COG calculation to a main pixel, which captures most of the scintillation light from a crystal, and its (direct and diagonal) neighboring pixels and reject single events in which this data is not fully available. This results in stable COG positions for a crystal element and enables high spatial image resolution. Due to the sensor layout, for some crystals it is very likely that a single diagonal neighbor pixel is missing as a result of the low light level on the corresponding DPC. This leads to a loss of sensitivity, if these events are rejected. An enhancement of the COG algorithm is proposed which handles the potentially missing pixel separately both for the crystal identification and the energy calculation. Using this advancement, we show that the sensitivity of the Hyperion-II D insert using the described scintillator configuration can be improved by 20-100% for practical useful readout thresholds of a single DPC pixel ranging from 17-52 photons. Furthermore, we show that the energy resolution of the scanner is superior for all readout thresholds if singles with a single missing pixel are accepted and correctly handled compared to the COG method only accepting singles with all neighbors present by 0-1.6% (relative difference). The presented methods can not only be applied to gamma detectors employing DPC sensors, but can be generalized to other similarly structured and self-triggering detectors, using light sharing techniques, as well.

Advancements in DEPMOSFET device developments for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Bombelli, L.; Eckart, R.; Fiorini, C.; Fischer, P.; Hälker, O.; Herrmann, S.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Schaller, G.; Schopper, F.; Soltau, H.; Strüder, L.; Wölfel, S.

2006-06-01

DEPMOSFET based Active Pixel Sensor (APS) matrices are a new detector concept for X-ray imaging spectroscopy missions. They can cope with the challenging requirements of the XEUS Wide Field Imager and combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. From the evaluation of first prototypes, new concepts have been developed to overcome the minor drawbacks and problems encountered for the older devices. The new devices will have a pixel size of 75 μm × 75 μm. Besides 64 × 64 pixel arrays, prototypes with a sizes of 256 × 256 pixels and 128 × 512 pixels and an active area of about 3.6 cm2 will be produced, a milestone on the way towards the fully grown XEUS WFI device. The production of these improved devices is currently on the way. At the same time, the development of the next generation of front-end electronics has been started, which will permit to operate the sensor devices with the readout speed required by XEUS. Here, a summary of the DEPFET capabilities, the concept of the sensors of the next generation and the new front-end electronics will be given. Additionally, prospects of new device developments using the DEPFET as a sensitive element are shown, e.g. so-called RNDR-pixels, which feature repetitive non-destructive readout to lower the readout noise below the 1 e - ENC limit.

Architecture and applications of a high resolution gated SPAD image sensor

PubMed Central

Burri, Samuel; Maruyama, Yuki; Michalet, Xavier; Regazzoni, Francesco; Bruschini, Claudio; Charbon, Edoardo

2014-01-01

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be increased to 30% with the use of microlenses. For precise control of the exposure and for time-resolved imaging, we use fast global gating signals to define exposure windows as small as 4 ns. The uniformity of the gate edges location is ∼140 ps (FWHM) over the whole array, while in-pixel digital counting enables frame rates as high as 156 kfps. Currently, our camera is used as a highly sensitive sensor with high temporal resolution, for applications ranging from fluorescence lifetime measurements to fluorescence correlation spectroscopy and generation of true random numbers. PMID:25090572

Neuromorphic infrared focal plane performs sensor fusion on-plane local-contrast-enhancement spatial and temporal filtering

NASA Astrophysics Data System (ADS)

Massie, Mark A.; Woolaway, James T., II; Curzan, Jon P.; McCarley, Paul L.

1993-08-01

An infrared focal plane has been simulated, designed and fabricated which mimics the form and function of the vertebrate retina. The `Neuromorphic' focal plane has the capability of performing pixel-based sensor fusion and real-time local contrast enhancement, much like the response of the human eye. The device makes use of an indium antimonide detector array with a 3 - 5 micrometers spectral response, and a switched capacitor resistive network to compute a real-time 2D spatial average. This device permits the summation of other sensor outputs to be combined on-chip with the infrared detections of the focal plane itself. The resulting real-time analog processed information thus represents the combined information of many sensors with the advantage that analog spatial and temporal signal processing is performed at the focal plane. A Gaussian subtraction method is used to produce the pixel output which when displayed produces an image with enhanced edges, representing spatial and temporal derivatives in the scene. The spatial and temporal responses of the device are tunable during operation, permitting the operator to `peak up' the response of the array to spatial and temporally varying signals. Such an array adapts to ambient illumination conditions without loss of detection performance. This paper reviews the Neuromorphic infrared focal plane from initial operational simulations to detailed design characteristics, and concludes with a presentation of preliminary operational data for the device as well as videotaped imagery.

A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

2015-01-01

The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

Contrast computation methods for interferometric measurement of sensor modulation transfer function

NASA Astrophysics Data System (ADS)

Battula, Tharun; Georgiev, Todor; Gille, Jennifer; Goma, Sergio

2018-01-01

Accurate measurement of image-sensor frequency response over a wide range of spatial frequencies is very important for analyzing pixel array characteristics, such as modulation transfer function (MTF), crosstalk, and active pixel shape. Such analysis is especially significant in computational photography for the purposes of deconvolution, multi-image superresolution, and improved light-field capture. We use a lensless interferometric setup that produces high-quality fringes for measuring MTF over a wide range of frequencies (here, 37 to 434 line pairs per mm). We discuss the theoretical framework, involving Michelson and Fourier contrast measurement of the MTF, addressing phase alignment problems using a moiré pattern. We solidify the definition of Fourier contrast mathematically and compare it to Michelson contrast. Our interferometric measurement method shows high detail in the MTF, especially at high frequencies (above Nyquist frequency). We are able to estimate active pixel size and pixel pitch from measurements. We compare both simulation and experimental MTF results to a lens-free slanted-edge implementation using commercial software.

A Novel Multi-Aperture Based Sun Sensor Based on a Fast Multi-Point MEANSHIFT (FMMS) Algorithm

PubMed Central

You, Zheng; Sun, Jian; Xing, Fei; Zhang, Gao-Fei

2011-01-01

With the current increased widespread interest in the development and applications of micro/nanosatellites, it was found that we needed to design a small high accuracy satellite attitude determination system, because the star trackers widely used in large satellites are large and heavy, and therefore not suitable for installation on micro/nanosatellites. A Sun sensor + magnetometer is proven to be a better alternative, but the conventional sun sensor has low accuracy, and cannot meet the requirements of the attitude determination systems of micro/nanosatellites, so the development of a small high accuracy sun sensor with high reliability is very significant. This paper presents a multi-aperture based sun sensor, which is composed of a micro-electro-mechanical system (MEMS) mask with 36 apertures and an active pixels sensor (APS) CMOS placed below the mask at a certain distance. A novel fast multi-point MEANSHIFT (FMMS) algorithm is proposed to improve the accuracy and reliability, the two key performance features, of an APS sun sensor. When the sunlight illuminates the sensor, a sun spot array image is formed on the APS detector. Then the sun angles can be derived by analyzing the aperture image location on the detector via the FMMS algorithm. With this system, the centroid accuracy of the sun image can reach 0.01 pixels, without increasing the weight and power consumption, even when some missing apertures and bad pixels appear on the detector due to aging of the devices and operation in a harsh space environment, while the pointing accuracy of the single-aperture sun sensor using the conventional correlation algorithm is only 0.05 pixels. PMID:22163770

High-Speed Binary-Output Image Sensor

NASA Technical Reports Server (NTRS)

Fossum, Eric; Panicacci, Roger A.; Kemeny, Sabrina E.; Jones, Peter D.

1996-01-01

Photodetector outputs digitized by circuitry on same integrated-circuit chip. Developmental special-purpose binary-output image sensor designed to capture up to 1,000 images per second, with resolution greater than 10 to the 6th power pixels per image. Lower-resolution but higher-frame-rate prototype of sensor contains 128 x 128 array of photodiodes on complementary metal oxide/semiconductor (CMOS) integrated-circuit chip. In application for which it is being developed, sensor used to examine helicopter oil to determine whether amount of metal and sand in oil sufficient to warrant replacement.

WE-G-204-03: Photon-Counting Hexagonal Pixel Array CdTe Detector: Optimal Resampling to Square Pixels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shrestha, S; Vedantham, S; Karellas, A

Purpose: Detectors with hexagonal pixels require resampling to square pixels for distortion-free display of acquired images. In this work, the presampling modulation transfer function (MTF) of a hexagonal pixel array photon-counting CdTe detector for region-of-interest fluoroscopy was measured and the optimal square pixel size for resampling was determined. Methods: A 0.65mm thick CdTe Schottky sensor capable of concurrently acquiring up to 3 energy-windowed images was operated in a single energy-window mode to include ≥10 KeV photons. The detector had hexagonal pixels with apothem of 30 microns resulting in pixel spacing of 60 and 51.96 microns along the two orthogonal directions.more » Images of a tungsten edge test device acquired under IEC RQA5 conditions were double Hough transformed to identify the edge and numerically differentiated. The presampling MTF was determined from the finely sampled line spread function that accounted for the hexagonal sampling. The optimal square pixel size was determined in two ways; the square pixel size for which the aperture function evaluated at the Nyquist frequencies along the two orthogonal directions matched that from the hexagonal pixel aperture functions, and the square pixel size for which the mean absolute difference between the square and hexagonal aperture functions was minimized over all frequencies up to the Nyquist limit. Results: Evaluation of the aperture functions over the entire frequency range resulted in square pixel size of 53 microns with less than 2% difference from the hexagonal pixel. Evaluation of the aperture functions at Nyquist frequencies alone resulted in 54 microns square pixels. For the photon-counting CdTe detector and after resampling to 53 microns square pixels using quadratic interpolation, the presampling MTF at Nyquist frequency of 9.434 cycles/mm along the two directions were 0.501 and 0.507. Conclusion: Hexagonal pixel array photon-counting CdTe detector after resampling to square pixels provides high-resolution imaging suitable for fluoroscopy.« less

Electrophoretically mediated microanalysis of a nicotinamide adenine dinucleotide-dependent enzyme and its facile multiplexing using an active pixel sensor UV detector.

PubMed

Urban, Pawel L; Goodall, David M; Bergström, Edmund T; Bruce, Neil C

2007-08-31

An electrophoretically mediated microanalysis (EMMA) method has been developed for yeast alcohol dehydrogenase and quantification of reactant and product cofactors, NAD and NADH. The enzyme substrate ethanol (1% (v/v)) was added to the buffer (50 mM borate, pH 8.8). Results are presented for parallel capillary electrophoresis with a novel miniature UV area detector, with an active pixel sensor imaging an array of two or six parallel capillaries connected via a manifold to a single output capillary in a commercial CE instrument, allowing conversions with five different yeast alcohol dehydrogenase concentrations to be quantified in a single experiment.

Chromatic Modulator for High Resolution CCD or APS Devices

NASA Technical Reports Server (NTRS)

Hartley, Frank T. (Inventor); Hull, Anthony B. (Inventor)

2003-01-01

A system for providing high-resolution color separation in electronic imaging. Comb drives controllably oscillate a red-green-blue (RGB) color strip filter system (or otherwise) over an electronic imaging system such as a charge-coupled device (CCD) or active pixel sensor (APS). The color filter is modulated over the imaging array at a rate three or more times the frame rate of the imaging array. In so doing, the underlying active imaging elements are then able to detect separate color-separated images, which are then combined to provide a color-accurate frame which is then recorded as the representation of the recorded image. High pixel resolution is maintained. Registration is obtained between the color strip filter and the underlying imaging array through the use of electrostatic comb drives in conjunction with a spring suspension system.

The X-IFU end-to-end simulations performed for the TES array optimization exercise

NASA Astrophysics Data System (ADS)

Peille, Philippe; Wilms, J.; Brand, T.; Cobo, B.; Ceballos, M. T.; Dauser, T.; Smith, S. J.; Barret, D.; den Herder, J. W.; Piro, L.; Barcons, X.; Pointecouteau, E.; Bandler, S.; den Hartog, R.; de Plaa, J.

2015-09-01

The focal plane assembly of the Athena X-ray Integral Field Unit (X-IFU) includes as the baseline an array of ~4000 single size calorimeters based on Transition Edge Sensors (TES). Other sensor array configurations could however be considered, combining TES of different properties (e.g. size). In attempting to improve the X-IFU performance in terms of field of view, count rate performance, and even spectral resolution, two alternative TES array configurations to the baseline have been simulated, each combining a small and a large pixel array. With the X-IFU end-to-end simulator, a sub-sample of the Athena core science goals, selected by the X-IFU science team as potentially driving the optimal TES array configuration, has been simulated for the results to be scientifically assessed and compared. In this contribution, we will describe the simulation set-up for the various array configurations, and highlight some of the results of the test cases simulated.

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process

NASA Astrophysics Data System (ADS)

Goiffon, Vincent; Magnan, Pierre; Bernard, Frédéric; Rolland, Guy; Saint-Pé, Olivier; Huger, Nicolas; Corbière, Franck

2008-02-01

We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging. We designed a test chip made of one 128×128-3T-pixel array with 10 μm pitch and more than 120 isolated test structures including photodiodes and MOSFETs with various implants and different sizes. All these devices were exposed to ionizing radiation up to 100 krad and their responses were correlated to identify the CMOS sensor weaknesses. Characterizations in darkness and under illumination demonstrated that dark current increase is the major sensor degradation. Shallow trench isolation was identified to be responsible for this degradation as it increases the number of generation centers in photodiode depletion regions. Consequences on hardness assurance and hardening-by-design are discussed.

Optimising the multiplex factor of the frequency domain multiplexed readout of the TES-based microcalorimeter imaging array for the X-IFU instrument on the Athena x-ray observatory

NASA Astrophysics Data System (ADS)

van der Kuur, J.; Gottardi, L. G.; Akamatsu, H.; van Leeuwen, B. J.; den Hartog, R.; Haas, D.; Kiviranta, M.; Jackson, B. J.

2016-07-01

Athena is a space-based X-ray observatory intended for exploration of the hot and energetic universe. One of the science instruments on Athena will be the X-ray Integrated Field Unit (X-IFU), which is a cryogenic X-ray spectrometer, based on a large cryogenic imaging array of Transition Edge Sensors (TES) based microcalorimeters operating at a temperature of 100mK. The imaging array consists of 3800 pixels providing 2.5 eV spectral resolution, and covers a field of view with a diameter of of 5 arc minutes. Multiplexed readout of the cryogenic microcalorimeter array is essential to comply with the cooling power and complexity constraints on a space craft. Frequency domain multiplexing has been under development for the readout of TES-based detectors for this purpose, not only for the X-IFU detector arrays but also for TES-based bolometer arrays for the Safari instrument of the Japanese SPICA observatory. This paper discusses the design considerations which are applicable to optimise the multiplex factor within the boundary conditions as set by the space craft. More specifically, the interplay between the science requirements such as pixel dynamic range, pixel speed, and cross talk, and the space craft requirements such as the power dissipation budget, available bandwidth, and electromagnetic compatibility will be discussed.

Active pixel sensor array with electronic shuttering

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor)

2002-01-01

An active pixel cell includes electronic shuttering capability. The cell can be shuttered to prevent additional charge accumulation. One mode transfers the current charge to a storage node that is blocked against accumulation of optical radiation. The charge is sampled from a floating node. Since the charge is stored, the node can be sampled at the beginning and the end of every cycle. Another aspect allows charge to spill out of the well whenever the charge amount gets higher than some amount, thereby providing anti blooming.

Design and performance of 4 x 5120-element visible and 2 x 2560-element shortwave infrared multispectral focal planes

NASA Astrophysics Data System (ADS)

Tower, J. R.; Cope, A. D.; Pellon, L. E.; McCarthy, B. M.; Strong, R. T.

1986-06-01

Two solid-state sensors for use in remote sensing instruments operating in the pushbroom mode are examined. The design and characteristics of the visible/near-infrared (VIS/NIR) device and the short-wavelength infrared (SWIR) device are described. The VIS/NIR is a CCD imager with four parallel sensor lines, each 1024 pixel long; the chip design and filter system of the VIS/NIR are studied. The performance of the VIS/NIR sensor with mask and its system performance are measured. The SWIR is a dual-band line imager consisting of palladium silicide Schottky-barrier detectors coupled to CCD multiplexers; the performance of the device is analyzed. The substrate materials and layout designs used to assemble the 4 x 5120-element VIS/NIR array and the 2 x 2560-element SWIR array are discussed, and the planarity of the butted arrays are verified using a profilometer. The optical and electrical characteristics, and the placement and butting accuracy of the arrays are evaluated. It is noted that the arrays met or exceed their expected performance.

Development of arrays of position-sensitive microcalorimeters for Constellation-X

NASA Astrophysics Data System (ADS)

Smith, Stephen J.; Bandler, Simon R.; Brekosky, Regis P.; Brown, Ari-D.; Chervenak, James A.; Eckart, Megan E.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Porter, F. Scott; Sadleir, John E.

2008-07-01

We are developing arrays of position-sensitive transition-edge sensor (PoST) X-ray detectors for future astronomy missions such as NASA's Constellation-X. The PoST consists of multiple absorbers thermally coupled to one or more transition-edge sensor (TES). Each absorber element has a different thermal coupling to the TES. This results in a distribution of different pulse shapes and enables position discrimination between the absorber elements. PoST's are motivated by the desire to achieve the largest possible focal plane area with the fewest number of readout channels and are ideally suited to increasing the Constellation-X focal plane area, without comprising on spatial sampling. Optimizing the performance of PoST's requires careful design of key parameters such as the thermal conductances between the absorbers, TES and the heat sink, as well as the absorber heat capacities. Our new generation of PoST's utilizes technology successfully developed on high resolution (~ 2.5 eV) single pixels arrays of Mo/Au TESs, also under development for Constellation-X. This includes noise mitigation features on the TES and low resistivity electroplated absorbers. We report on the first experimental results from new one-channel, four-pixel, PoST's or 'Hydras', consisting of composite Au/Bi absorbers. We have achieved full-width-at-half-maximum energy resolution of between 5-6 eV on all four Hydra pixels with an exponential decay time constant of 620 μs. Straightforward position discrimination by means of rise time is also demonstrated.

Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

PubMed

Elbakri, I A; McIntosh, B J; Rickey, D W

2009-03-21

We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result.

Development of Position-sensitive Transition-edge Sensor X-ray Detectors

NASA Technical Reports Server (NTRS)

Smith, S. J.; Bandler, S. R.; Brekosky, R. P.; Brown, A.-D.; Chervenak, J. A.; Eckard, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. s.;

MT3250BA: a 320×256-50µm snapshot microbolometer ROIC for high-resistance detector arrays

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Akin, Tayfun

2013-06-01

This paper reports the development of a new microbolometer readout integrated circuit (MT3250BA) designed for high-resistance detector arrays. MT3250BA is the first microbolometer readout integrated circuit (ROIC) product from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic CMOS imaging sensors and ROICs for hybrid photonic imaging sensors and microbolometers. MT3250BA has a format of 320 × 256 and a pixel pitch of 50 µm, developed with a system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT3250BA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. MT3250BA has 2 analog video outputs and 1 analog reference output for pseudo-differential operation, and the ROIC can be programmed to operate in the 1 or 2-output modes. A unique feature of MT3250BA is that it performs snapshot readout operation; therefore, the image quality will only be limited by the thermal time constant of the detector pixels, but not by the scanning speed of the ROIC, as commonly found in the conventional microbolometer ROICs performing line-by-line (rolling-line) readout operation. The signal integration is performed at the pixel level in parallel for the whole array, and signal integration time can be programmed from 0.1 µs up to 100 ms in steps of 0.1 µs. The ROIC is designed to work with high-resistance detector arrays with pixel resistance values higher than 250 kΩ. The detector bias voltage can be programmed on-chip over a 2 V range with a resolution of 1 mV. The ROIC has a measured input referred noise of 260 µV rms at 300 K. The ROIC can be used to build a microbolometer infrared sensor with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a high detector resistance value (≥ 250 KΩ), a high TCR value (≥ 2.5 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). The ROIC uses a single 3.3 V supply voltage and dissipates less than 75 mW in the 1-output mode at 60 fps. MT3250BA is fabricated using a mixed-signal CMOS process on 200 mm CMOS wafers, and tested wafers are available with test data and wafer map. A USB based compact test electronics and software are available for quick evaluation of this new microbolometer ROIC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kay, Randolph R; Campbell, David V; Shinde, Subhash L

A modular, scalable focal plane array is provided as an array of integrated circuit dice, wherein each die includes a given amount of modular pixel array circuitry. The array of dice effectively multiplies the amount of modular pixel array circuitry to produce a larger pixel array without increasing die size. Desired pixel pitch across the enlarged pixel array is preserved by forming die stacks with each pixel array circuitry die stacked on a separate die that contains the corresponding signal processing circuitry. Techniques for die stack interconnections and die stack placement are implemented to ensure that the desired pixel pitchmore » is preserved across the enlarged pixel array.« less

A Versatile Multichannel Digital Signal Processing Module for Microcalorimeter Arrays

NASA Astrophysics Data System (ADS)

Tan, H.; Collins, J. W.; Walby, M.; Hennig, W.; Warburton, W. K.; Grudberg, P.

2012-06-01

Different techniques have been developed for reading out microcalorimeter sensor arrays: individual outputs for small arrays, and time-division or frequency-division or code-division multiplexing for large arrays. Typically, raw waveform data are first read out from the arrays using one of these techniques and then stored on computer hard drives for offline optimum filtering, leading not only to requirements for large storage space but also limitations on achievable count rate. Thus, a read-out module that is capable of processing microcalorimeter signals in real time will be highly desirable. We have developed multichannel digital signal processing electronics that are capable of on-board, real time processing of microcalorimeter sensor signals from multiplexed or individual pixel arrays. It is a 3U PXI module consisting of a standardized core processor board and a set of daughter boards. Each daughter board is designed to interface a specific type of microcalorimeter array to the core processor. The combination of the standardized core plus this set of easily designed and modified daughter boards results in a versatile data acquisition module that not only can easily expand to future detector systems, but is also low cost. In this paper, we first present the core processor/daughter board architecture, and then report the performance of an 8-channel daughter board, which digitizes individual pixel outputs at 1 MSPS with 16-bit precision. We will also introduce a time-division multiplexing type daughter board, which takes in time-division multiplexing signals through fiber-optic cables and then processes the digital signals to generate energy spectra in real time.

Compressive hyperspectral sensor for LWIR gas detection

NASA Astrophysics Data System (ADS)

Russell, Thomas A.; McMackin, Lenore; Bridge, Bob; Baraniuk, Richard

2012-06-01

Focal plane arrays with associated electronics and cooling are a substantial portion of the cost, complexity, size, weight, and power requirements of Long-Wave IR (LWIR) imagers. Hyperspectral LWIR imagers add significant data volume burden as they collect a high-resolution spectrum at each pixel. We report here on a LWIR Hyperspectral Sensor that applies Compressive Sensing (CS) in order to achieve benefits in these areas. The sensor applies single-pixel detection technology demonstrated by Rice University. The single-pixel approach uses a Digital Micro-mirror Device (DMD) to reflect and multiplex the light from a random assortment of pixels onto the detector. This is repeated for a number of measurements much less than the total number of scene pixels. We have extended this architecture to hyperspectral LWIR sensing by inserting a Fabry-Perot spectrometer in the optical path. This compressive hyperspectral imager collects all three dimensions on a single detection element, greatly reducing the size, weight and power requirements of the system relative to traditional approaches, while also reducing data volume. The CS architecture also supports innovative adaptive approaches to sensing, as the DMD device allows control over the selection of spatial scene pixels to be multiplexed on the detector. We are applying this advantage to the detection of plume gases, by adaptively locating and concentrating target energy. A key challenge in this system is the diffraction loss produce by the DMD in the LWIR. We report the results of testing DMD operation in the LWIR, as well as system spatial and spectral performance.

Characterisation of a novel reverse-biased PPD CMOS image sensor

NASA Astrophysics Data System (ADS)

Stefanov, K. D.; Clarke, A. S.; Ivory, J.; Holland, A. D.

2017-11-01

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

Synthesis of a fiber-optic magnetostrictive sensor (FOMS) pixel for RF magnetic field imaging

NASA Astrophysics Data System (ADS)

Rengarajan, Suraj

The principal objective of this dissertation was to synthesize a sensor element with properties specifically optimized for integration into arrays capable of imaging RF magnetic fields. The dissertation problem was motivated by applications in nondestructive eddy current testing, smart skins, etc., requiring sensor elements that non-invasively detect millimeter-scale variations over several square meters, in low level magnetic fields varying at frequencies in the 100 kHz-1 GHz range. The poor spatial and temporal resolution of FOMS elements available prior to this dissertation research, precluded their use in non-invasive large area mapping applications. Prior research had been focused on large, discrete devices for detecting extremely low level magnetic fields varying at a few kHz. These devices are incompatible with array integration and imaging applications. The dissertation research sought to overcome the limitations of current technology by utilizing three new approaches; synthesizing magnetostrictive thin films and optimizing their properties for sensor applications, integrating small sensor elements into an array compatible fiber optic interferometer, and devising a RF mixing approach to measure high frequency magnetic fields using the integrated sensor element. Multilayer thin films were used to optimize the magnetic properties of the magnetostrictive elements. Alternating soft (Nisb{80}Fesb{20}) and hard (Cosb{50}Fesb{50}) magnetic alloy layers were selected for the multilayer and the layer thicknesses were varied to obtain films with a combination of large magnetization, high frequency permeability and large magnetostrictivity. X-Ray data and measurement of the variations in the magnetization, resistivity and magnetostriction with layer thicknesses, indicated that an interfacial layer was responsible for enhancing the sensing performance of the multilayers. A FOMS pixel was patterned directly onto the sensing arm of a fiber-optic interferometer, by sputtering a multilayer film with favorable sensor properties. After calibrating the interferometer response with a piezo, the mechanical and magnetic responses of the FOMS element were evaluated for various test fields. High frequency magnetic fields were detected using a local oscillator field to downconvert the RF signal fields to the lower mechanical resonant frequency of the element. A field sensitivity of 0.3 Oe/cm sensor element length was demonstrated at 1 MHz. A coherent magnetization rotation model was developed to predict the magnetostrictive response of the element, and identify approaches for optimizing its performance. This model predicts that an optimized element could resolve ˜1 mm variations in fields varying at frequencies >10 MHz with a sensitivity of ˜10sp{-3} Oe/mm. The results demonstrate the potential utility of integrating this device as a FOMS pixel in RF magnetic field imaging arrays.

A high sensitivity 20Mfps CMOS image sensor with readout speed of 1Tpixel/sec for visualization of ultra-high speed phenomena

NASA Astrophysics Data System (ADS)

Kuroda, R.; Sugawa, S.

2017-02-01

Ultra-high speed (UHS) CMOS image sensors with on-chop analog memories placed on the periphery of pixel array for the visualization of UHS phenomena are overviewed in this paper. The developed UHS CMOS image sensors consist of 400H×256V pixels and 128 memories/pixel, and the readout speed of 1Tpixel/sec is obtained, leading to 10 Mfps full resolution video capturing with consecutive 128 frames, and 20 Mfps half resolution video capturing with consecutive 256 frames. The first development model has been employed in the high speed video camera and put in practical use in 2012. By the development of dedicated process technologies, photosensitivity improvement and power consumption reduction were simultaneously achieved, and the performance improved version has been utilized in the commercialized high-speed video camera since 2015 that offers 10 Mfps with ISO16,000 photosensitivity. Due to the improved photosensitivity, clear images can be captured and analyzed even under low light condition, such as under a microscope as well as capturing of UHS light emission phenomena.

Imaging system design and image interpolation based on CMOS image sensor

NASA Astrophysics Data System (ADS)

Li, Yu-feng; Liang, Fei; Guo, Rui

2009-11-01

An image acquisition system is introduced, which consists of a color CMOS image sensor (OV9620), SRAM (CY62148), CPLD (EPM7128AE) and DSP (TMS320VC5509A). The CPLD implements the logic and timing control to the system. SRAM stores the image data, and DSP controls the image acquisition system through the SCCB (Omni Vision Serial Camera Control Bus). The timing sequence of the CMOS image sensor OV9620 is analyzed. The imaging part and the high speed image data memory unit are designed. The hardware and software design of the image acquisition and processing system is given. CMOS digital cameras use color filter arrays to sample different spectral components, such as red, green, and blue. At the location of each pixel only one color sample is taken, and the other colors must be interpolated from neighboring samples. We use the edge-oriented adaptive interpolation algorithm for the edge pixels and bilinear interpolation algorithm for the non-edge pixels to improve the visual quality of the interpolated images. This method can get high processing speed, decrease the computational complexity, and effectively preserve the image edges.

International Symposium on Applications of Ferroelectrics

DTIC Science & Technology

1993-02-01

neighborhood of the Curie point. A high dielectric constant The technology of producing monolithic IR detectors using is also useful in many imaging applications...a linear array of sensors. Eacha detector (pixel) or group of Work on new infrared (IR) sensors is at present them, can thus produce a signal ... recorded . The signal beam , was expanded to certain input image (or a partial one) is illuminated only with the 15mm to carry images and was then

A bio-image sensor for simultaneous detection of multi-neurotransmitters.

PubMed

Lee, You-Na; Okumura, Koichi; Horio, Tomoko; Iwata, Tatsuya; Takahashi, Kazuhiro; Hattori, Toshiaki; Sawada, Kazuaki

2018-03-01

We report here a new bio-image sensor for simultaneous detection of spatial and temporal distribution of multi-neurotransmitters. It consists of multiple enzyme-immobilized membranes on a 128 × 128 pixel array with read-out circuit. Apyrase and acetylcholinesterase (AChE), as selective elements, are used to recognize adenosine 5'-triphosphate (ATP) and acetylcholine (ACh), respectively. To enhance the spatial resolution, hydrogen ion (H + ) diffusion barrier layers are deposited on top of the bio-image sensor and demonstrated their prevention capability. The results are used to design the space among enzyme-immobilized pixels and the null H + sensor to minimize the undesired signal overlap by H + diffusion. Using this bio-image sensor, we can obtain H + diffusion-independent imaging of concentration gradients of ATP and ACh in real-time. The sensing characteristics, such as sensitivity and detection of limit, are determined experimentally. With the proposed bio-image sensor the possibility exists for customizable monitoring of the activities of various neurochemicals by using different kinds of proton-consuming or generating enzymes. Copyright © 2017 Elsevier B.V. All rights reserved.

Broadband Terahertz Computed Tomography Using a 5k-pixel Real-time THz Camera

NASA Astrophysics Data System (ADS)

Trichopoulos, Georgios C.; Sertel, Kubilay

2015-07-01

We present a novel THz computed tomography system that enables fast 3-dimensional imaging and spectroscopy in the 0.6-1.2 THz band. The system is based on a new real-time broadband THz camera that enables rapid acquisition of multiple cross-sectional images required in computed tomography. Tomographic reconstruction is achieved using digital images from the densely-packed large-format (80×64) focal plane array sensor located behind a hyper-hemispherical silicon lens. Each pixel of the sensor array consists of an 85 μm × 92 μm lithographically fabricated wideband dual-slot antenna, monolithically integrated with an ultra-fast diode tuned to operate in the 0.6-1.2 THz regime. Concurrently, optimum impedance matching was implemented for maximum pixel sensitivity, enabling 5 frames-per-second image acquisition speed. As such, the THz computed tomography system generates diffraction-limited resolution cross-section images as well as the three-dimensional models of various opaque and partially transparent objects. As an example, an over-the-counter vitamin supplement pill is imaged and its material composition is reconstructed. The new THz camera enables, for the first time, a practical application of THz computed tomography for non-destructive evaluation and biomedical imaging.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, S.; Cole, D. M.; Hancock, B. R.; Smith, R. M.

2008-01-01

Electronic coupling effects such as Inter-Pixel Capacitance (IPC) affect the quantitative interpretation of image data from CMOS, hybrid visible and infrared imagers alike. Existing methods of characterizing IPC do not provide a map of the spatial variation of IPC over all pixels. We demonstrate a deterministic method that provides a direct quantitative map of the crosstalk across an imager. The approach requires only the ability to reset single pixels to an arbitrary voltage, different from the rest of the imager. No illumination source is required. Mapping IPC independently for each pixel is also made practical by the greater S/N ratio achievable for an electrical stimulus than for an optical stimulus, which is subject to both Poisson statistics and diffusion effects of photo-generated charge. The data we present illustrates a more complex picture of IPC in Teledyne HgCdTe and HyViSi focal plane arrays than is presently understood, including the presence of a newly discovered, long range IPC in the HyViSi FPA that extends tens of pixels in distance, likely stemming from extended field effects in the fully depleted substrate. The sensitivity of the measurement approach has been shown to be good enough to distinguish spatial structure in IPC of the order of 0.1%.

A Combined Laser-Communication and Imager for Microspacecraft (ACLAIM)

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J.

1998-01-01

ACLAIM is a multi-function instrument consisting of a laser communication terminal and an imaging camera that share a common telescope. A single APS- (Active Pixel Sensor) based focal-plane-array is used to perform both the acquisition and tracking (for laser communication) and science imaging functions.

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

NASA Technical Reports Server (NTRS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty;

Mechanical designs and development of TES bolometer detector arrays for the Advanced ACTPol experiment

NASA Astrophysics Data System (ADS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; Hilton, Gene; Hubmayr, Johannes; Khavari, Niloufar; Klein, Jeffrey; Koopman, Brian J.; Li, Dale; McMahon, Jeffrey; Mumby, Grace; Nati, Federico; Niemack, Michael D.; Page, Lyman A.; Salatino, Maria; Schillaci, Alessandro; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Thornton, Robert; Ullom, Joel N.; Vavagiakis, Eve M.; Wollack, Edward J.

2016-07-01

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline profile leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Solar XUV Imaging and Non-dispersive Spectroscopy for Solar-C Enabled by Scientific CMOS APS Arrays

NASA Astrophysics Data System (ADS)

Stern, Robert A.; Lemen, J. R.; Shing, L.; Janesick, J.; Tower, J.

2009-05-01

Monolithic CMOS Advanced Pixel Sensor (APS) arrays are showing great promise as eventual replacements for the current workhorse of solar physics focal planes, the scientific CCD. CMOS APS devices have individually addressable pixels, increased radiation tolerance compared to CCDs, and require lower clock voltages, and thus lower power. However, commercially available CMOS chips, while suitable for use with intensifiers or fluorescent coatings, are generally not optimized for direct detection of EUV and X-ray photons. A high performance scientific CMOS array designed for these wavelengths will have significant new capabilities compared to CCDs, including the ability to read out small regions of the solar disk at high (sub sec) cadence, count single X-ray photons with Fano-limited energy resolution, and even operate at room temperature with good noise performance. Such capabilities will be crucial for future solar X-ray and EUV missions such as Solar-C. Sarnoff Corporation has developed scientific grade, monolithic CMOS arrays for X-ray imaging and photon counting. One prototype device, the "minimal" array, has 8 um pixels, is 15 to 25 um thick, is fabricated on high-resistivity ( 10 to 20 kohm-cm) Si wafers, and can be back-illuminated. These characteristics yield high quantum efficiency and high spatial resolution with minimal charge sharing among pixels, making it ideal for the detection of keV X-rays. When used with digital correlated double sampling, the array has demonstrated noise performance as low as 2 e, allowing single photon counting of X-rays over a range of temperatures. We report test results for this device in X-rays, and discuss the implications for future solar space missions.

Image sensor with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2006-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

PubMed

Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

2017-06-19

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

DOE PAGES

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; ...

2016-01-28

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

PubMed Central

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

2016-01-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

PubMed

Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

2016-03-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

NASA Astrophysics Data System (ADS)

Dragone, A.; Kenney, C.; Lozinskaya, A.; Tolbanov, O.; Tyazhev, A.; Zarubin, A.; Wang, Zhehui

2016-11-01

A multilayer stacked X-ray camera concept is described. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detection [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.

Origami silicon optoelectronics for hemispherical electronic eye systems.

PubMed

Zhang, Kan; Jung, Yei Hwan; Mikael, Solomon; Seo, Jung-Hun; Kim, Munho; Mi, Hongyi; Zhou, Han; Xia, Zhenyang; Zhou, Weidong; Gong, Shaoqin; Ma, Zhenqiang

2017-11-24

Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.

Large format imaging arrays for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Wollack, E. J.; Marraige, T.; Staggs, S.; Niemack, M.; Doriese, B.

2006-01-01

We describe progress in the fabrication, characterization, and production of detector arrays for the Atacama Cosmology Telescope (ACT). The completed ACT instrument is specified to image simultaneously at 145, 225, and 265 GHz using three 32x32 filled arrays of superconducting transition edge sensors (TES) read out with time-division-multiplexed SQUID amplifiers. We present details of the pixel design and testing including the optimization of the electrical parameters for multiplexed readout. Using geometric noise suppression and careful tuning of operation temperature and device bias resistance, the excess noise in the TES devices is balanced with detector speed for interfacing with the ACT optics. The design also accounts for practical tolerances such as transition temperature gradients and scatter that occur in the production of multiple wafers to populate fully the kilopixel cameras. We have developed an implanted absorber layer compatible with our silicon-on-insulator process that allows for tunable optical resistance with requisite on-wafer uniformity and wafer-to-wafer reproducibility. Arrays of 32 elements have been tested in the laboratory environment including electrical, optical, and multiplexed performance. Given this pixel design, optical tests and modeling are used to predict the performance of the filled array under anticipated viewing conditions. Integration of the filled array of pixels with a tuned backshort and dielectric plate in front of the array maximize absorption and the focal plane and suppress reflections. A mechanical design for the build of the full structure is completed and we report on progress toward the construction of a prototype array for first light on the ACT.

Fast Readout Architectures for Large Arrays of Digital Pixels: Examples and Applications

PubMed Central

Gabrielli, A.

2014-01-01

Modern pixel detectors, particularly those designed and constructed for applications and experiments for high-energy physics, are commonly built implementing general readout architectures, not specifically optimized in terms of speed. High-energy physics experiments use bidimensional matrices of sensitive elements located on a silicon die. Sensors are read out via other integrated circuits bump bonded over the sensor dies. The speed of the readout electronics can significantly increase the overall performance of the system, and so here novel forms of readout architectures are studied and described. These circuits have been investigated in terms of speed and are particularly suited for large monolithic, low-pitch pixel detectors. The idea is to have a small simple structure that may be expanded to fit large matrices without affecting the layout complexity of the chip, while maintaining a reasonably high readout speed. The solutions might be applied to devices for applications not only in physics but also to general-purpose pixel detectors whenever online fast data sparsification is required. The paper presents also simulations on the efficiencies of the systems as proof of concept for the proposed ideas. PMID:24778588

Microlens array processor with programmable weight mask and direct optical input

NASA Astrophysics Data System (ADS)

Schmid, Volker R.; Lueder, Ernst H.; Bader, Gerhard; Maier, Gert; Siegordner, Jochen

1999-03-01

We present an optical feature extraction system with a microlens array processor. The system is suitable for online implementation of a variety of transforms such as the Walsh transform and DCT. Operating with incoherent light, our processor accepts direct optical input. Employing a sandwich- like architecture, we obtain a very compact design of the optical system. The key elements of the microlens array processor are a square array of 15 X 15 spherical microlenses on acrylic substrate and a spatial light modulator as transmissive mask. The light distribution behind the mask is imaged onto the pixels of a customized a-Si image sensor with adjustable gain. We obtain one output sample for each microlens image and its corresponding weight mask area as summation of the transmitted intensity within one sensor pixel. The resulting architecture is very compact and robust like a conventional camera lens while incorporating a high degree of parallelism. We successfully demonstrate a Walsh transform into the spatial frequency domain as well as the implementation of a discrete cosine transform with digitized gray values. We provide results showing the transformation performance for both synthetic image patterns and images of natural texture samples. The extracted frequency features are suitable for neural classification of the input image. Other transforms and correlations can be implemented in real-time allowing adaptive optical signal processing.

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Technical Reports Server (NTRS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.;

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Astrophysics Data System (ADS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Henderson, S. W.; Hilton, G. C.; Hubmayr, J.; Koopman, B. J.; Lanen, J. V.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Niraula, P.; Salatino, M.; Schillaci, A.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Ward, J. T.; Wollack, E. J.; Vavagiakis, E. M.

2016-08-01

The Atacama Cosmology Telescope Polarimeter (ACTPol) is a polarization sensitive receiver for the 6-m Atacama Cosmology Telescope (ACT) and measures the small angular scale polarization anisotropies in the cosmic microwave background (CMB). The full focal plane is composed of three detector arrays, containing over 3000 transition edge sensors (TES detectors) in total. The first two detector arrays, observing at 146 GHz, were deployed in 2013 and 2014, respectively. The third and final array is composed of multichroic pixels sensitive to both 90 and 146 GHz and saw first light in February 2015. Fabricated at NIST, this dichroic array consists of 255 pixels, with a total of 1020 polarization sensitive bolometers and is coupled to the telescope with a monolithic array of broad-band silicon feedhorns. The detectors are read out using time-division SQUID multiplexing and cooled by a dilution refrigerator at 110 mK. We present an overview of the assembly and characterization of this multichroic array in the lab, and the initial detector performance in Chile. The detector array has a TES detector electrical yield of 85 %, a total array sensitivity of less than 10 \\upmu K√{ {s}}, and detector time constants and saturation powers suitable for ACT CMB observations.

Implementation of an Optical Readout System for High-Sensitivity Terahertz Microelectromechanical Sensor Array

DTIC Science & Technology

2014-09-01

rod moves about the illumination scene, the pixels in the detector start to flicker . The ‘ flickering ’ effect is due to the metal rod blocking THz...still possible to mitigate convective heat exchange between the sensor and the ambient surroundings. To mitigate the effects of convective heat...detector start to flicker . The ‘ flickering ’ effect is due to the metal rod blocking THz radiation. This effect is more apparent in the video

SEM contour based metrology for microlens process studies in CMOS image sensor technologies

NASA Astrophysics Data System (ADS)

Lakcher, Amine; Ostrovsky, Alain; Le-Gratiet, Bertrand; Berthier, Ludovic; Bidault, Laurent; Ducoté, Julien; Jamin-Mornet, Clémence; Mortini, Etienne; Besacier, Maxime

2018-03-01

From the first digital cameras which appeared during the 70s to cameras of current smartphones, image sensors have undergone significant technological development in the last decades. The development of CMOS image sensor technologies in the 90s has been the main driver of the recent progresses. The main component of an image sensor is the pixel. A pixel contains a photodiode connected to transistors but only the photodiode area is light sensitive. This results in a significant loss of efficiency. To solve this issue, microlenses are used to focus the incident light on the photodiode. A microlens array is made out of a transparent material and has a spherical cap shape. To obtain this spherical shape, a lithography process is performed to generate resist blocks which are then annealed above their glass transition temperature (reflow). Even if the dimensions to consider are higher than in advanced IC nodes, microlenses are sensitive to process variability during lithography and reflow. A good control of the microlens dimensions is key to optimize the process and thus the performance of the final product. The purpose of this paper is to apply SEM contour metrology [1, 2, 3, 4] to microlenses in order to develop a relevant monitoring methodology and to propose new metrics to engineers to evaluate their process or optimize the design of the microlens arrays.

ChromAIX2: A large area, high count-rate energy-resolving photon counting ASIC for a Spectral CT Prototype

NASA Astrophysics Data System (ADS)

Steadman, Roger; Herrmann, Christoph; Livne, Amir

2017-08-01

Spectral CT based on energy-resolving photon counting detectors is expected to deliver additional diagnostic value at a lower dose than current state-of-the-art CT [1]. The capability of simultaneously providing a number of spectrally distinct measurements not only allows distinguishing between photo-electric and Compton interactions but also discriminating contrast agents that exhibit a K-edge discontinuity in the absorption spectrum, referred to as K-edge Imaging [2]. Such detectors are based on direct converting sensors (e.g. CdTe or CdZnTe) and high-rate photon counting electronics. To support the development of Spectral CT and show the feasibility of obtaining rates exceeding 10 Mcps/pixel (Poissonian observed count-rate), the ChromAIX ASIC has been previously reported showing 13.5 Mcps/pixel (150 Mcps/mm2 incident) [3]. The ChromAIX has been improved to offer the possibility of a large area coverage detector, and increased overall performance. The new ASIC is called ChromAIX2, and delivers count-rates exceeding 15 Mcps/pixel with an rms-noise performance of approximately 260 e-. It has an isotropic pixel pitch of 500 μm in an array of 22×32 pixels and is tile-able on three of its sides. The pixel topology consists of a two stage amplifier (CSA and Shaper) and a number of test features allowing to thoroughly characterize the ASIC without a sensor. A total of 5 independent thresholds are also available within each pixel, allowing to acquire 5 spectrally distinct measurements simultaneously. The ASIC also incorporates a baseline restorer to eliminate excess currents induced by the sensor (e.g. dark current and low frequency drifts) which would otherwise cause an energy estimation error. In this paper we report on the inherent electrical performance of the ChromAXI2 as well as measurements obtained with CZT (CdZnTe)/CdTe sensors and X-rays and radioactive sources.

A novel weighted-direction color interpolation

NASA Astrophysics Data System (ADS)

Tao, Jin-you; Yang, Jianfeng; Xue, Bin; Liang, Xiaofen; Qi, Yong-hong; Wang, Feng

2013-08-01

A digital camera capture images by covering the sensor surface with a color filter array (CFA), only get a color sample at pixel location. Demosaicking is a process by estimating the missing color components of each pixel to get a full resolution image. In this paper, a new algorithm based on edge adaptive and different weighting factors is proposed. Our method can effectively suppress undesirable artifacts. Experimental results based on Kodak images show that the proposed algorithm obtain higher quality images compared to other methods in numerical and visual aspects.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

1995-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2004-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Cat-eye effect target recognition with single-pixel detectors

NASA Astrophysics Data System (ADS)

Jian, Weijian; Li, Li; Zhang, Xiaoyue

2015-12-01

A prototype of cat-eye effect target recognition with single-pixel detectors is proposed. Based on the framework of compressive sensing, it is possible to recognize cat-eye effect targets by projecting a series of known random patterns and measuring the backscattered light with three single-pixel detectors in different locations. The prototype only requires simpler, less expensive detectors and extends well beyond the visible spectrum. The simulations are accomplished to evaluate the feasibility of the proposed prototype. We compared our results to that obtained from conventional cat-eye effect target recognition methods using area array sensor. The experimental results show that this method is feasible and superior to the conventional method in dynamic and complicated backgrounds.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz; Shenai, Alpana

The Vertically Integrated Photon Imaging Chip - Large, (VIPIC-L), is a large area, small pixel (65μm), 3D integrated, photon counting ASIC with zero-suppressed or full frame dead-time-less data readout. It features data throughput of 14.4 Gbps per chip with a full frame readout speed of 56kframes/s in the imaging mode. VIPIC-L contain 192 x 192 pixel array and the total size of the chip is 1.248cm x 1.248cm with only a 5μm periphery. It contains about 120M transistors. A 1.3M pixel camera module will be developed by arranging a 6 x 6 array of 3D VIPIC-L’s bonded to a largemore » area silicon sensor on the analog side and to a readout board on the digital side. The readout board hosts a bank of FPGA’s, one per VIPIC-L to allow processing of up to 0.7 Tbps of raw data produced by the camera.« less

Comparison of Measured Dark Current Distributions with Calculated Damage Energy Distributions in HgCdTe

NASA Technical Reports Server (NTRS)

Marshall, C. J.; Marshall, P. W.; Howe, C. L.; Reed, R. A.; Weller, R. A.; Mendenhall, M.; Waczynski, A.; Ladbury, R.; Jordan, T. M.

2007-01-01

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [1]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED [3-5], a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Plenoptic mapping for imaging and retrieval of the complex field amplitude of a laser beam.

PubMed

Wu, Chensheng; Ko, Jonathan; Davis, Christopher C

2016-12-26

The plenoptic sensor has been developed to sample complicated beam distortions produced by turbulence in the low atmosphere (deep turbulence or strong turbulence) with high density data samples. In contrast with the conventional Shack-Hartmann wavefront sensor, which utilizes all the pixels under each lenslet of a micro-lens array (MLA) to obtain one data sample indicating sub-aperture phase gradient and photon intensity, the plenoptic sensor uses each illuminated pixel (with significant pixel value) under each MLA lenslet as a data point for local phase gradient and intensity. To characterize the working principle of a plenoptic sensor, we propose the concept of plenoptic mapping and its inverse mapping to describe the imaging and reconstruction process respectively. As a result, we show that the plenoptic mapping is an efficient method to image and reconstruct the complex field amplitude of an incident beam with just one image. With a proof of concept experiment, we show that adaptive optics (AO) phase correction can be instantaneously achieved without going through a phase reconstruction process under the concept of plenoptic mapping. The plenoptic mapping technology has high potential for applications in imaging, free space optical (FSO) communication and directed energy (DE) where atmospheric turbulence distortion needs to be compensated.

Active pixel sensor array with multiresolution readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

1999-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Real Time Detecting and Processing Signals by an Integrated Sensor Chip Based on Meta-materials and Photonic Crystals

DTIC Science & Technology

2012-05-29

the ring. At first, the resonating behavior of a typical SRR is noted by the red curve in Figure 13. Following that, with the omission of the inner...resonant frequency. Finally, in the third case, the resonance was eliminated altogether as shown in Figure 13 with the green curve . The ’short’ of the... Micromirror Devices (DMD) and phased array antenna design by controlling each element of the array or pixel electronically. 4.2.1 Numerical

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Wavelength- or Polarization-Selective Thermal Infrared Detectors for Multi-Color or Polarimetric Imaging Using Plasmonics and Metamaterials

PubMed Central

Ogawa, Shinpei; Kimata, Masafumi

2017-01-01

Wavelength- or polarization-selective thermal infrared (IR) detectors are promising for various novel applications such as fire detection, gas analysis, multi-color imaging, multi-channel detectors, recognition of artificial objects in a natural environment, and facial recognition. However, these functions require additional filters or polarizers, which leads to high cost and technical difficulties related to integration of many different pixels in an array format. Plasmonic metamaterial absorbers (PMAs) can impart wavelength or polarization selectivity to conventional thermal IR detectors simply by controlling the surface geometry of the absorbers to produce surface plasmon resonances at designed wavelengths or polarizations. This enables integration of many different pixels in an array format without any filters or polarizers. We review our recent advances in wavelength- and polarization-selective thermal IR sensors using PMAs for multi-color or polarimetric imaging. The absorption mechanism defined by the surface structures is discussed for three types of PMAs—periodic crystals, metal-insulator-metal and mushroom-type PMAs—to demonstrate appropriate applications. Our wavelength- or polarization-selective uncooled IR sensors using various PMAs and multi-color image sensors are then described. Finally, high-performance mushroom-type PMAs are investigated. These advanced functional thermal IR detectors with wavelength or polarization selectivity will provide great benefits for a wide range of applications. PMID:28772855

Wavelength- or Polarization-Selective Thermal Infrared Detectors for Multi-Color or Polarimetric Imaging Using Plasmonics and Metamaterials.

PubMed

Ogawa, Shinpei; Kimata, Masafumi

2017-05-04

Wavelength- or polarization-selective thermal infrared (IR) detectors are promising for various novel applications such as fire detection, gas analysis, multi-color imaging, multi-channel detectors, recognition of artificial objects in a natural environment, and facial recognition. However, these functions require additional filters or polarizers, which leads to high cost and technical difficulties related to integration of many different pixels in an array format. Plasmonic metamaterial absorbers (PMAs) can impart wavelength or polarization selectivity to conventional thermal IR detectors simply by controlling the surface geometry of the absorbers to produce surface plasmon resonances at designed wavelengths or polarizations. This enables integration of many different pixels in an array format without any filters or polarizers. We review our recent advances in wavelength- and polarization-selective thermal IR sensors using PMAs for multi-color or polarimetric imaging. The absorption mechanism defined by the surface structures is discussed for three types of PMAs-periodic crystals, metal-insulator-metal and mushroom-type PMAs-to demonstrate appropriate applications. Our wavelength- or polarization-selective uncooled IR sensors using various PMAs and multi-color image sensors are then described. Finally, high-performance mushroom-type PMAs are investigated. These advanced functional thermal IR detectors with wavelength or polarization selectivity will provide great benefits for a wide range of applications.

Front-end multiplexing—applied to SQUID multiplexing: Athena X-IFU and QUBIC experiments

NASA Astrophysics Data System (ADS)

Prele, D.

2015-08-01

As we have seen for digital camera market and a sensor resolution increasing to "megapixels", all the scientific and high-tech imagers (whatever the wave length - from radio to X-ray range) tends also to always increases the pixels number. So the constraints on front-end signals transmission increase too. An almost unavoidable solution to simplify integration of large arrays of pixels is front-end multiplexing. Moreover, "simple" and "efficient" techniques allow integration of read-out multiplexers in the focal plane itself. For instance, CCD (Charge Coupled Device) technology has boost number of pixels in digital camera. Indeed, this is exactly a planar technology which integrates both the sensors and a front-end multiplexed readout. In this context, front-end multiplexing techniques will be discussed for a better understanding of their advantages and their limits. Finally, the cases of astronomical instruments in the millimeter and in the X-ray ranges using SQUID (Superconducting QUantum Interference Device) will be described.

Laser-induced forward transfer of single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Palla-Papavlu, A.; Dinescu, M.; Wokaun, A.; Lippert, T.

2014-10-01

The objective of this work is the application of laser-induced forward transfer (LIFT) for the fabrication of chemiresistor sensors. The receiver substrate is an array with metal electrodes and the active materials placed by LIFT are single-walled carbon nanotubes (SWCNT). The functionality of such sensors depends on the geometry of the active material onto the metallic electrodes. First the best geometry for the sensing materials and electrodes was determined, including the optimization of the process parameters for printing uniform pixels of SWCNT onto the sensor electrodes. The sensors were characterized in terms of their sensing characteristics, i.e., upon exposure to ammonia, proving the feasibility of LIFT.

Note: Operation of gamma-ray microcalorimeters at elevated count rates using filters with constraints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alpert, B. K.; Horansky, R. D.; Bennett, D. A.

Microcalorimeter sensors operated near 0.1 K can measure the energy of individual x- and gamma-ray photons with significantly more precision than conventional semiconductor technologies. Both microcalorimeter arrays and higher per pixel count rates are desirable to increase the total throughput of spectrometers based on these devices. The millisecond recovery time of gamma-ray microcalorimeters and the resulting pulse pileup are significant obstacles to high per pixel count rates. Here, we demonstrate operation of a microcalorimeter detector at elevated count rates by use of convolution filters designed to be orthogonal to the exponential tail of a preceding pulse. These filters allow operationmore » at 50% higher count rates than conventional filters while largely preserving sensor energy resolution.« less

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

2008-01-01

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gatingmore » time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.« less

A noiseless, kHz frame rate imaging detector for AO wavefront sensors based on MCPs read out with the Medipix2 CMOS pixel chip

NASA Astrophysics Data System (ADS)

Vallerga, J. V.; McPhate, J. B.; Tremsin, A. S.; Siegmund, O. H. W.; Mikulec, B.; Clark, A. G.

2004-12-01

Future wavefront sensors in adaptive optics (AO) systems for the next generation of large telescopes (> 30 m diameter) will require large formats (512x512) , kHz frame rates, low readout noise (<3 electrons) and high optical QE. The current generation of CCDs cannot achieve the first three of these specifications simultaneously. We present a detector scheme that can meet the first three requirements with an optical QE > 40%. This detector consists of a vacuum tube with a proximity focused GaAs photocathode whose photoelectrons are amplified by microchannel plates and the resulting output charge cloud counted by a pixelated CMOS application specific integrated circuit (ASIC) called the Medipix2 (http://medipix.web.cern.ch/MEDIPIX/). Each 55 micron square pixel of the Medipix2 chip has an amplifier, discriminator and 14 bit counter and the 256x256 array can be read out in 287 microseconds. The chip is 3 side abuttable so a 512x512 array is feasible in one vacuum tube. We will present the first results with an open-faced, demountable version of the detector where we have mounted a pair of MCPs 500 microns above a Medipix2 readout inside a vacuum chamber and illuminated it with UV light. The results include: flat field response, spatial resolution, spatial linearity on the sub-pixel level and global event counting rate. We will also discuss the vacuum tube design and the fabrication issues associated with the Medipix2 surviving the tube making process.

On-sky performance evaluation and calibration of a polarization-sensitive focal plane array

NASA Astrophysics Data System (ADS)

Vorobiev, Dmitry; Ninkov, Zoran; Brock, Neal; West, Ray

2016-07-01

The advent of pixelated micropolarizer arrays (MPAs) has facilitated the development of polarization-sensitive focal plane arrays (FPAs) based on charge-coupled devices (CCDs) and active pixel sensors (APSs), which are otherwise only able to measure the intensity of light. Polarization sensors based on MPAs are extremely compact, light-weight, mechanically robust devices with no moving parts, capable of measuring the degree and angle of polarization of light in a single snapshot. Furthermore, micropolarizer arrays based on wire grid polarizers (so called micro-grid polarizers) offer extremely broadband performance, across the optical and infrared regimes. These devices have potential for a wide array of commercial and research applications, where measurements of polarization can provide critical information, but where conventional polarimeters could be practically implemented. To date, the most successful commercial applications of these devices are 4D Technology's PhaseCam laser interferometers and PolarCam imaging polarimeters. Recently, MPA-based polarimeters have been identified as a potential solution for space-based telescopes, where the small size, snapshot capability and low power consumption (offered by these devices) are extremely desirable. In this work, we investigated the performance of MPA-based polarimeters designed for astronomical polarimetry using the Rochester Institute of Technology Polarization Imaging Camera (RITPIC). We deployed RITPIC on the 0.9 meter SMARTS telescope at the Cerro Tololo Inter-American Observatory and observed a variety of astronomical objects (calibration stars, variable stars, reflection nebulae and planetary nebulae). We use our observations to develop calibration procedures that are unique to these devices and provide an estimate for polarimetric precision that is achievable.

Image compression technique

DOEpatents

Fu, Chi-Yung; Petrich, Loren I.

1997-01-01

An image is compressed by identifying edge pixels of the image; creating a filled edge array of pixels each of the pixels in the filled edge array which corresponds to an edge pixel having a value equal to the value of a pixel of the image array selected in response to the edge pixel, and each of the pixels in the filled edge array which does not correspond to an edge pixel having a value which is a weighted average of the values of surrounding pixels in the filled edge array which do correspond to edge pixels; and subtracting the filled edge array from the image array to create a difference array. The edge file and the difference array are then separately compressed and transmitted or stored. The original image is later reconstructed by creating a preliminary array in response to the received edge file, and adding the preliminary array to the received difference array. Filling is accomplished by solving Laplace's equation using a multi-grid technique. Contour and difference file coding techniques also are described. The techniques can be used in a method for processing a plurality of images by selecting a respective compression approach for each image, compressing each of the images according to the compression approach selected, and transmitting each of the images as compressed, in correspondence with an indication of the approach selected for the image.

Image compression technique

DOEpatents

Fu, C.Y.; Petrich, L.I.

1997-03-25

An image is compressed by identifying edge pixels of the image; creating a filled edge array of pixels each of the pixels in the filled edge array which corresponds to an edge pixel having a value equal to the value of a pixel of the image array selected in response to the edge pixel, and each of the pixels in the filled edge array which does not correspond to an edge pixel having a value which is a weighted average of the values of surrounding pixels in the filled edge array which do correspond to edge pixels; and subtracting the filled edge array from the image array to create a difference array. The edge file and the difference array are then separately compressed and transmitted or stored. The original image is later reconstructed by creating a preliminary array in response to the received edge file, and adding the preliminary array to the received difference array. Filling is accomplished by solving Laplace`s equation using a multi-grid technique. Contour and difference file coding techniques also are described. The techniques can be used in a method for processing a plurality of images by selecting a respective compression approach for each image, compressing each of the images according to the compression approach selected, and transmitting each of the images as compressed, in correspondence with an indication of the approach selected for the image. 16 figs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.

Experiments at storage ring light sources as well as at next-generation light sources increasingly require detectors capable of high dynamic range operation, combining low-noise detection of single photons with large pixel well depth. XFEL sources in particular provide pulse intensities sufficiently high that a purely photon-counting approach is impractical. The High Dynamic Range Pixel Array Detector (HDR-PAD) project aims to provide a dynamic range extending from single-photon sensitivity to 10{sup 6} photons/pixel in a single XFEL pulse while maintaining the ability to tolerate a sustained flux of 10{sup 11} ph/s/pixel at a storage ring source. Achieving these goals involves themore » development of fast pixel front-end electronics as well as, in the XFEL case, leveraging the delayed charge collection due to plasma effects in the sensor. A first prototype of essential electronic components of the HDR-PAD readout ASIC, exploring different options for the pixel front-end, has been fabricated. Here, the HDR-PAD concept and preliminary design will be described.« less

Progress in the Development of Mo-Au Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Stahle, Caroline K.; Brekosky, Regis P.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Gygax, John D.; Li, Mary J.; Lindeman, Mark A..; Porter, F. Scott; Tralshawalaa, Nilesh

2000-01-01

X-ray microcalorimeters using transition-edge sensors (TES) show great promise for use in astronomical x-ray spectroscopy. We have obtained very high energy resolution (2.8 electronvolts at 1.5 kiloelectronvolts and 3.7 electronvolts at 3.3 kiloelectronvolts) in a large, isolated TES pixel using a Mo/Au proximity-effect bilayer on a silicon nitride membrane. We will discuss the performance and our characterization of that device. In order to be truly suitable for use behind an x-ray telescope, however, such devices need to be arrayed with a pixel size and focal-plane coverage commensurate with the telescope focal length and spatial resolution. Since this requires fitting the TES and its thermal link, a critical component of each calorimeter pixel, into a far more compact geometry than has previously been investigated, we must study the fundamental scaling laws in pixel optimization. We have designed a photolithography mask that will allow us to probe the range in thermal conductance that can be obtained by perforating the nitride membrane in a narrow perimeter around the sensor. This mask will also show the effects of reducing the TES area. Though we have not yet tested devices of the compact designs, we will present our progress in several of the key processing steps and discuss the parameter space of our intended investigations.

A Sensitive Dynamic and Active Pixel Vision Sensor for Color or Neural Imaging Applications.

PubMed

Moeys, Diederik Paul; Corradi, Federico; Li, Chenghan; Bamford, Simeon A; Longinotti, Luca; Voigt, Fabian F; Berry, Stewart; Taverni, Gemma; Helmchen, Fritjof; Delbruck, Tobi

2018-02-01

Applications requiring detection of small visual contrast require high sensitivity. Event cameras can provide higher dynamic range (DR) and reduce data rate and latency, but most existing event cameras have limited sensitivity. This paper presents the results of a 180-nm Towerjazz CIS process vision sensor called SDAVIS192. It outputs temporal contrast dynamic vision sensor (DVS) events and conventional active pixel sensor frames. The SDAVIS192 improves on previous DAVIS sensors with higher sensitivity for temporal contrast. The temporal contrast thresholds can be set down to 1% for negative changes in logarithmic intensity (OFF events) and down to 3.5% for positive changes (ON events). The achievement is possible through the adoption of an in-pixel preamplification stage. This preamplifier reduces the effective intrascene DR of the sensor (70 dB for OFF and 50 dB for ON), but an automated operating region control allows up to at least 110-dB DR for OFF events. A second contribution of this paper is the development of characterization methodology for measuring DVS event detection thresholds by incorporating a measure of signal-to-noise ratio (SNR). At average SNR of 30 dB, the DVS temporal contrast threshold fixed pattern noise is measured to be 0.3%-0.8% temporal contrast. Results comparing monochrome and RGBW color filter array DVS events are presented. The higher sensitivity of SDAVIS192 make this sensor potentially useful for calcium imaging, as shown in a recording from cultured neurons expressing calcium sensitive green fluorescent protein GCaMP6f.

Development of a high-definition IR LED scene projector

NASA Astrophysics Data System (ADS)

Norton, Dennis T.; LaVeigne, Joe; Franks, Greg; McHugh, Steve; Vengel, Tony; Oleson, Jim; MacDougal, Michael; Westerfeld, David

2016-05-01

Next-generation Infrared Focal Plane Arrays (IRFPAs) are demonstrating ever increasing frame rates, dynamic range, and format size, while moving to smaller pitch arrays.1 These improvements in IRFPA performance and array format have challenged the IRFPA test community to accurately and reliably test them in a Hardware-In-the-Loop environment utilizing Infrared Scene Projector (IRSP) systems. The rapidly-evolving IR seeker and sensor technology has, in some cases, surpassed the capabilities of existing IRSP technology. To meet the demands of future IRFPA testing, Santa Barbara Infrared Inc. is developing an Infrared Light Emitting Diode IRSP system. Design goals of the system include a peak radiance >2.0W/cm2/sr within the 3.0-5.0μm waveband, maximum frame rates >240Hz, and >4million pixels within a form factor supported by pixel pitches <=32μm. This paper provides an overview of our current phase of development, system design considerations, and future development work.

A compact lightweight Earth horizon sensor using an uncooled infrared bolometer

NASA Astrophysics Data System (ADS)

Marchese, Linda E.; Thomas, Paul; Pope, Timothy D.; Asselin, Daniel; Jerominek, Hubert

2007-06-01

A compact, lightweight Earth horizon sensor has been designed based on uncooled infrared microbolometer array technology developed at INO. The design has been optimized for use on small satellites in Low Earth Orbits. The sensor may be used either as an attitude sensor or as an atmospheric limb detector. Various configurations may be implemented for both spinning and 3-axis stabilized satellites. The core of the sensor is the microbolometer focal plane array equipped with 256 x 1 VO x thermistor pixels with a pitch of 52 μm. The optics consists of a single Zinc Selenide lens with a focal length of 39.7 mm. The system's F-number is 3.8 and the detector limited Noise Equivalent Temperature Difference is estimated to be 0.75 K at 300 K for the 14 - 16 μm wavelength range. A single-sensor configuration will have a mass of less than 300g, a volume of 125 cm 3 and a power consumption of 600 mW, making it well-suited for small satellite missions.

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

Advances in Small Pixel TES-Based X-Ray Microcalorimeter Arrays for Solar Physics and Astrophysics

NASA Technical Reports Server (NTRS)

Bandler, S. R.; Adams, J. S.; Bailey, C. N.; Busch, S. E.; Chervenak, J. A.; Eckart, M. E.; Ewin, A. E.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

Geiger-mode avalanche photodiode focal plane arrays for three-dimensional imaging LADAR

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-09-01

We report on the development of focal plane arrays (FPAs) employing two-dimensional arrays of InGaAsP-based Geiger-mode avalanche photodiodes (GmAPDs). These FPAs incorporate InP/InGaAs(P) Geiger-mode avalanche photodiodes (GmAPDs) to create pixels that detect single photons at shortwave infrared wavelengths with high efficiency and low dark count rates. GmAPD arrays are hybridized to CMOS read-out integrated circuits (ROICs) that enable independent laser radar (LADAR) time-of-flight measurements for each pixel, providing three-dimensional image data at frame rates approaching 200 kHz. Microlens arrays are used to maintain high fill factor of greater than 70%. We present full-array performance maps for two different types of sensors optimized for operation at 1.06 μm and 1.55 μm, respectively. For the 1.06 μm FPAs, overall photon detection efficiency of >40% is achieved at <20 kHz dark count rates with modest cooling to ~250 K using integrated thermoelectric coolers. We also describe the first evalution of these FPAs when multi-photon pulses are incident on single pixels. The effective detection efficiency for multi-photon pulses shows excellent agreement with predictions based on Poisson statistics. We also characterize the crosstalk as a function of pulse mean photon number. Relative to the intrinsic crosstalk contribution from hot carrier luminescence that occurs during avalanche current flows resulting from single incident photons, we find a modest rise in crosstalk for multi-photon incident pulses that can be accurately explained by direct optical scattering.

Extended focal-plane array development for the International X-ray Observatory

NASA Astrophysics Data System (ADS)

Smith, Stephen J.; Bandler, Simon R.; Beyer, Joern; Chervenak, James A.; Drung, Dietmar; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Scott Porter, F.; Sadleir, John E.

2009-12-01

We are developing arrays of transition-edge sensors (TES's) for the International X-ray observatory (IXO). The IXO microcalorimeter array will consist of a central 40×40 core of 300 μm pitch pixels with a resolution of 2.5 eV from 0.3-10 keV. To maximize the science return from the mission, an outer extended array is also required. This 52×52 array (2304 elements surrounding the core) of 600 μm pitch pixels increases the field-of-view from 2' to 5.4' with a resolution of 10 eV. However, significantly increasing the number of readout channels is unfavorable due to the increase in mass and power of the readout chain as well as adding complexity at the focal plane. Consequently, we are developing position-sensitive devices which maintain the same plate scale but at a reduced number of readout channels. One option is to use multiple absorber elements with different thermal conductances to a single TES. Position discrimination is achieved from differences in the pulse rise-time. Another new option is to inductively couple several TES's to a single SQUID. Position discrimination can be achieved by using different combinations of coupling polarity, inductive couplings and heat sink conductances. We present first results demonstrating <9 eV across four 500 μm pixels coupled to a single SQUID. A further possibility is to increase the number of channels to be time-division multiplexed in a single column at some expense in resolution. In this paper we discuss experimental results and trade-offs for these extended array options.

Solid-state image sensor with focal-plane digital photon-counting pixel array

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

1995-01-01

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fabrication of Detector Arrays for the SPT-3G Receiver

NASA Astrophysics Data System (ADS)

Posada, C. M.; Ade, P. A. R.; Ahmed, Z.; Anderson, A. J.; Austermann, J. E.; Avva, J. S.; Thakur, R. Basu; Bender, A. N.; Benson, B. A.; Carlstrom, J. E.; Carter, F. W.; Cecil, T.; Chang, C. L.; Cliche, J. F.; Cukierman, A.; Denison, E. V.; de Haan, T.; Ding, J.; Divan, R.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Foster, A.; Gannon, R. N.; Gilbert, A.; Groh, J. C.; Halverson, N. W.; Harke-Hosemann, A. H.; Harrington, N. L.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Huang, N.; Irwin, K. D.; Jeong, O. B.; Jonas, M.; Khaire, T.; Kofman, A. M.; Korman, M.; Kubik, D.; Kuhlmann, S.; Kuo, C. L.; Lee, A. T.; Lowitz, A. E.; Meyer, S. S.; Michalik, D.; Miller, C. S.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Noble, G. I.; Novosad, V.; Padin, S.; Pan, Z.; Pearson, J.; Rahlin, A.; Ruhl, J. E.; Saunders, L. J.; Sayre, J. T.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J. A.; Stan, L.; Stark, A. A.; Story, K. T.; Suzuki, A.; Tang, Q. Y.; Thompson, K. L.; Tucker, C.; Vale, L. R.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Yefremenko, V.; Yoon, K. W.; Young, M. R.

2018-05-01

The South Pole Telescope third-generation (SPT-3G) receiver was installed during the austral summer of 2016-2017. It is designed to measure the cosmic microwave background across three frequency bands centered at 95, 150, and 220 GHz. The SPT-3G receiver has ten focal plane modules, each with 269 pixels. Each pixel features a broadband sinuous antenna coupled to a niobium microstrip transmission line. In-line filters define the desired band-passes before the signal is coupled to six bolometers with Ti/Au/Ti/Au transition edge sensors (three bands × two polarizations). In total, the SPT-3G receiver is composed of 16,000 detectors, which are read out using a 68× frequency-domain multiplexing scheme. In this paper, we present the process employed in fabricating the detector arrays.

Methodology for the Determination of the Photon Detection Efficiency of Large-Area Multi-Pixel Photon Counters

NASA Astrophysics Data System (ADS)

Beattie, T.; Lolos, G. J.; Papandreou, Z.; Semenov, A. Yu.; Teigrob, L. A.

2015-08-01

Large-area, multi-pixel photon counters will be used for the electromagnetic Barrel Calorimeter of the GlueX experiment at Jefferson Lab. These photo sensors are based on a 3 ×3 mm2 cell populated by 50 μm pixels, with 16 such cells tiled in a 4 ×4 arrangement in the array. The 16 cells are summed electronically and the signals are amplified. The photon detection efficiency of a group of first-article units at room temperature under conditions similar to those of the experiment was extracted to be (28 ±2(stat) ±2(syst))%, by employing an analysis methodology based on Poisson statistics carried out on the summed energy signals from the units.

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

SAPHIRA detector for infrared wavefront sensing

NASA Astrophysics Data System (ADS)

Finger, Gert; Baker, Ian; Alvarez, Domingo; Ives, Derek; Mehrgan, Leander; Meyer, Manfred; Stegmeier, Jörg; Weller, Harald J.

2014-08-01

The only way to overcome the CMOS noise barrier of near infrared sensors used for wavefront sensing and fringe tracking is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. In 2007 ESO started a program at Selex to develop near infrared electron avalanche photodiode arrays (eAPD) for wavefront sensing and fringe tracking. In a first step the cutoff wavelength was reduced from 4.5 micron to 2.5 micron in order to verify that the dark current scales with the bandgap and can be reduced to less than one electron/ms, the value required for wavefront sensing. The growth technology was liquid phase epitaxy (LPE) with annular diodes based on the loophole interconnect technology. The arrays required deep cooling to 40K to achieve acceptable cosmetic performance at high APD gain. The second step was to develop a multiplexer tailored to the specific application of the GRAVITY instrument wavefront sensors and the fringe tracker. The pixel format is 320x256 pixels. The array has 32 parallel video outputs which are arranged in such a way that the full multiplex advantage is available also for small subwindows. Nondestructive readout schemes with subpixel sampling are possible. This reduces the readout noise at high APD gain well below the subelectron level at frame rates of 1 KHz. The third step was the change of the growth technology from liquid phase epitaxy to metal organic vapour phase epitaxy (MOVPE). This growth technology allows the band structure and doping to be controlled on a 0.1μm scale and provides more flexibility for the design of diode structures. The bandgap can be varied for different layers of Hg(1-x)CdxTe. It is possible to make heterojunctions and apply solid state engineering techniques. The change to MOVPE resulted in a dramatic improvement in the cosmetic quality with 99.97 % operable pixels at an operating temperature of 85K. Currently this sensor is deployed in the 4 wavefront sensors and in the fringe tracker of the VLT instrument GRAVITY. Initial results will be presented. An outlook will be given on the potential of APD technology to be employed in large format near infrared science detectors. Several of the results presented here have also been shown to a different audience at the Scientific Detector Workshop in October 2013 in Florence but this paper has been updated with new results [1].

The multifocus plenoptic camera

NASA Astrophysics Data System (ADS)

Georgiev, Todor; Lumsdaine, Andrew

2012-01-01

The focused plenoptic camera is based on the Lippmann sensor: an array of microlenses focused on the pixels of a conventional image sensor. This device samples the radiance, or plenoptic function, as an array of cameras with large depth of field, focused at a certain plane in front of the microlenses. For the purpose of digital refocusing (which is one of the important applications) the depth of field needs to be large, but there are fundamental optical limitations to this. The solution of the above problem is to use and array of interleaved microlenses of different focal lengths, focused at two or more different planes. In this way a focused image can be constructed at any depth of focus, and a really wide range of digital refocusing can be achieved. This paper presents our theory and results of implementing such camera. Real world images are demonstrating the extended capabilities, and limitations are discussed.

Timing Results Using an FPGA-Based TDC with Large Arrays of 144 SiPMs

NASA Astrophysics Data System (ADS)

Aguilar, A.; González, A. J.; Torres, J.; García-Olcina, R.; Martos, J.; Soret, J.; Conde, P.; Hernández, L.; Sánchez, F.; Benlloch, J. M.

2015-02-01

Silicon photomultipliers (SiPMs) have become an alternative to traditional tubes due to several features. However, their implementation to form large arrays is still a challenge especially due to their relatively high intrinsic noise, depending on the chosen readout. In this contribution, two modules composed of 12 ×12 SiPMs with an area of roughly 50 mm×50 mm are used in coincidence. Coincidence resolving time (CRT) results with a field-programmable gate array, in combination with a time to digital converter, are shown as a function of both the sensor bias voltage and the digitizer threshold. The dependence of the CRT on the sensor matrix temperature, the amount of SiPM active area and the crystal type is also analyzed. Measurements carried out with a crystal array of 2 mm pixel size and 10 mm height have shown time resolutions for the entire 288 SiPM two-detector set-up as good as 800 ps full width at half maximum (FWHM).

Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware.

PubMed

Kumar, Saurabh; Amrutur, Bharadwaj; Asokan, Sundarrajan

2018-02-01

Fiber Bragg Grating (FBG) sensors have become popular for applications related to structural health monitoring, biomedical engineering, and robotics. However, for successful large scale adoption, FBG interrogation systems are as important as sensor characteristics. Apart from accuracy, the required number of FBG sensors per fiber and the distance between the device in which the sensors are used and the interrogation system also influence the selection of the interrogation technique. For several measurement devices developed for applications in biomedical engineering and robotics, only a few sensors per fiber are required and the device is close to the interrogation system. For these applications, interrogation systems based on InGaAs linear detector arrays provide a good choice. However, their resolution is dependent on the algorithms used for curve fitting. In this work, a detailed analysis of the choice of algorithm using the Gaussian approximation for the FBG spectrum and the number of pixels used for curve fitting on the errors is provided. The points where the maximum errors occur have been identified. All comparisons for wavelength shift detection have been made against another interrogation system based on the tunable swept laser. It has been shown that maximum errors occur when the wavelength shift is such that one new pixel is included for curve fitting. It has also been shown that an algorithm with lower computation cost compared to the more popular methods using iterative non-linear least squares estimation can be used without leading to the loss of accuracy. The algorithm has been implemented on embedded hardware, and a speed-up of approximately six times has been observed.

Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware

NASA Astrophysics Data System (ADS)

Kumar, Saurabh; Amrutur, Bharadwaj; Asokan, Sundarrajan

2018-02-01

Fiber Bragg Grating (FBG) sensors have become popular for applications related to structural health monitoring, biomedical engineering, and robotics. However, for successful large scale adoption, FBG interrogation systems are as important as sensor characteristics. Apart from accuracy, the required number of FBG sensors per fiber and the distance between the device in which the sensors are used and the interrogation system also influence the selection of the interrogation technique. For several measurement devices developed for applications in biomedical engineering and robotics, only a few sensors per fiber are required and the device is close to the interrogation system. For these applications, interrogation systems based on InGaAs linear detector arrays provide a good choice. However, their resolution is dependent on the algorithms used for curve fitting. In this work, a detailed analysis of the choice of algorithm using the Gaussian approximation for the FBG spectrum and the number of pixels used for curve fitting on the errors is provided. The points where the maximum errors occur have been identified. All comparisons for wavelength shift detection have been made against another interrogation system based on the tunable swept laser. It has been shown that maximum errors occur when the wavelength shift is such that one new pixel is included for curve fitting. It has also been shown that an algorithm with lower computation cost compared to the more popular methods using iterative non-linear least squares estimation can be used without leading to the loss of accuracy. The algorithm has been implemented on embedded hardware, and a speed-up of approximately six times has been observed.

Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

PubMed

Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

2015-04-21

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

Room temperature 1040fps, 1 megapixel photon-counting image sensor with 1.1um pixel pitch

NASA Astrophysics Data System (ADS)

Masoodian, S.; Ma, J.; Starkey, D.; Wang, T. J.; Yamashita, Y.; Fossum, E. R.

2017-05-01

A 1Mjot single-bit quanta image sensor (QIS) implemented in a stacked backside-illuminated (BSI) process is presented. This is the first work to report a megapixel photon-counting CMOS-type image sensor to the best of our knowledge. A QIS with 1.1μm pitch tapered-pump-gate jots is implemented with cluster-parallel readout, where each cluster of jots is associated with its own dedicated readout electronics stacked under the cluster. Power dissipation is reduced with this cluster readout because of the reduced column bus parasitic capacitance, which is important for the development of 1Gjot arrays. The QIS functions at 1040fps with binary readout and dissipates only 17.6mW, including I/O pads. The readout signal chain uses a fully differential charge-transfer amplifier (CTA) gain stage before a 1b-ADC to achieve an energy/bit FOM of 16.1pJ/b and 6.9pJ/b for the whole sensor and gain stage+ADC, respectively. Analog outputs with on-chip gain are implemented for pixel characterization purposes.

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragone, Angelo; Kenney, Chris; Lozinskaya, Anastassiya

Here, we describe a multilayer stacked X-ray camera concept. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detectionmore » [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.« less

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

DOE PAGES

Dragone, Angelo; Kenney, Chris; Lozinskaya, Anastassiya; ...

2016-11-29

Here, we describe a multilayer stacked X-ray camera concept. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detectionmore » [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.« less

A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance

NASA Astrophysics Data System (ADS)

Snoeys, W.; Aglieri Rinella, G.; Hillemanns, H.; Kugathasan, T.; Mager, M.; Musa, L.; Riedler, P.; Reidt, F.; Van Hoorne, J.; Fenigstein, A.; Leitner, T.

2017-11-01

For the upgrade of its Inner Tracking System, the ALICE experiment plans to install a new tracker fully constructed with monolithic active pixel sensors implemented in a standard 180 nm CMOS imaging sensor process, with a deep pwell allowing full CMOS within the pixel. Reverse substrate bias increases the tolerance to non-ionizing energy loss (NIEL) well beyond 1013 1 MeVneq /cm2, but does not allow full depletion of the sensitive layer and hence full charge collection by drift, mandatory for more extreme radiation tolerance. This paper describes a process modification to fully deplete the epitaxial layer even with a small charge collection electrode. It uses a low dose blanket deep high energy n-type implant in the pixel array and does not require significant circuit or layout changes so that the same design can be fabricated both in the standard and modified process. When exposed to a 55 Fe source at a reverse substrate bias of -6 V, pixels implemented in the standard and the modified process in a low and high dose variant for the deep n-type implant respectively yield a signal of about 115 mV, 110 mV and 90 mV at the output of a follower circuit. Signal rise times heavily affected by the speed of this circuit are 27 . 8 + / - 5 ns, 23 . 2 + / - 4 . 2 ns, and 22 . 2 + / - 3 . 7 ns rms, respectively. In a different setup, the single pixel signal from a 90 Sr source only degrades by less than 20% for the modified process after a 1015 1 MeVneq /cm2 irradiation, while the signal rise time only degrades by about 16 + / - 2 ns to 19 + / - 2 . 8 ns rms. From sensors implemented in the standard process no useful signal could be extracted after the same exposure. These first results indicate the process modification maintains low sensor capacitance, improves timing performance and increases NIEL tolerance by at least an order of magnitude.

Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy

NASA Technical Reports Server (NTRS)

Bandler, SImon; Stevenson, Thomas; Hsieh, Wen-Ting

2011-01-01

Metallic magnetic calorimeters (MMC) are one of the most promising devices to provide very high energy resolution needed for future astronomical x-ray spectroscopy. MMC detectors can be built to large detector arrays having thousands of pixels. Position-sensitive magnetic (PoSM) microcalorimeters consist of multiple absorbers thermally coupled to one magnetic micro calorimeter. Each absorber element has a different thermal coupling to the MMC, resulting in a distribution of different pulse shapes and enabling position discrimination between the absorber elements. PoSMs therefore achieve the large focal plane area with fewer number of readout channels without compromising spatial sampling. Excellent performance of PoSMs was achieved by optimizing the designs of key parameters such as the thermal conductance among the absorbers, magnetic sensor, and heat sink, as well as the absorber heat capacities. Micro fab ri - cation techniques were developed to construct four-absorber PoSMs, in which each absorber consists of a two-layer composite of bismuth and gold. The energy resolution (FWHM full width at half maximum) was measured to be better than 5 eV at 6 keV x-rays for all four absorbers. Position determination was demonstrated with pulse-shape discrimination, as well as with pulse rise time. X-ray microcalorimeters are usually designed to thermalize as quickly as possible to avoid degradation in energy resolution from position dependence to the pulse shapes. Each pixel consists of an absorber and a temperature sensor, both decoupled from the cold bath through a weak thermal link. Each pixel requires a separate readout channel; for instance, with a SQUID (superconducting quantum interference device). For future astronomy missions where thousands to millions of resolution elements are required, having an individual SQUID readout channel for each pixel becomes difficult. One route to attaining these goals is a position-sensitive detector in which a large continuous or pixilated array of x-ray absorbers shares fewer numbers of temperature sensors. A means of discriminating the signals from different absorber positions, however, needs to be built into the device for each sensor. The design concept for the device is such that the shape of the temperature pulse with time depends on the location of the absorber. This inherent position sensitivity of the signal is then analyzed to determine the location of the event precisely, effectively yielding one device with many sub-pixels. With such devices, the total number of electronic channels required to read out a given number of pixels is significantly reduced. PoSMs were developed that consist of four discrete absorbers connected to a single magnetic sensor. The design concept can be extended to more than four absorbers per sensor. The thermal conductance between the sensor and each absorber is different by design and consequently, the pulse shapes are different depending upon which absorber the xrays are received, allowing position discrimination. A magnetic sensor was used in which a paramagnetic Au:Er temperature-sensitive material is located in a weak magnetic field. Deposition of energy from an x-ray photon causes an increase in temperature, which leads to a change of magnetization of the paramagnetic sensor, which is subsequently read out using a low noise dc-SQUID. The PoSM microcalorimeters are fully microfabricated: the Au:Er sensor is located above the meander, with a thin insulation gap in between. For this position-sensitive device, four electroplated absorbers are thermally linked to the sensor via heat links of different thermal conductance. One pixel is identical to that of a single-pixel design, consisting of an overhanging absorber fabricated directly on top of the sensor. It is therefore very strongly thermally coupled to it. The three other absorbers are supported directly on a silicon-nitride membrane. These absorbers are thermally coupled to the sensor via Ti (5 nm)/Au250 nm) metal links. The strength of the links is parameterized by the number of gold squares making up the link. For detector performance, experimentally different pulse-shapes were demonstrated with 6 keV x-rays, which clearly show different rise times for different absorber positions. For energy resolution measurement, the PoSM was operated at 32 mK with an applied field that was generated using a persistent current of 50 mA. Over the four pixels, energy resolution ranges from 4.4 to 4.7 eV were demonstrated.

Preliminary Results from Small-Pixel CdZnTe and CdTe Arrays

NASA Technical Reports Server (NTRS)

Ramsey, B. D.; Sharma, D. P.; Meisner, J.; Austin, R. A.

1999-01-01

We have evaluated 2 small-pixel (0.75 mm) Cadmium-Zinc-Telluride arrays, and one Cadmium-Telluride array, all fabricated for MSFC by Metorex (Finland) and Baltic Science Institute (Riga, Latvia). Each array was optimized for operating temperature and collection bias. It was then exposed to Cadmium-109 and Iron-55 laboratory isotopes, to measure the energy resolution for each pixel and was then scanned with a finely-collimated x-ray beam, of width 50 micron, to examine pixel to pixel and inter-pixel charge collections efficiency. Preliminary results from these array tests will be presented.

Novel eye-safe line scanning 3D laser-radar

NASA Astrophysics Data System (ADS)

Eberle, B.; Kern, Tobias; Hammer, Marcus; Schwanke, Ullrich; Nowak, Heinrich

2014-10-01

Today, the civil market provides quite a number of different 3D-Sensors covering ranges up to 1 km. Typically these sensors are based on single element detectors which suffer from the drawback of spatial resolution at larger distances. Tasks demanding reliable object classification at long ranges can be fulfilled only by sensors consisting of detector arrays. They ensure sufficient frame rates and high spatial resolution. Worldwide there are many efforts in developing 3D-detectors, based on two-dimensional arrays. This paper presents first results on the performance of a recently developed 3D imaging laser radar sensor, working in the short wave infrared (SWIR) at 1.5 μm. It consists of a novel Cadmium Mercury Telluride (CMT) linear array APD detector with 384x1 elements at a pitch of 25 μm, developed by AIM Infrarot Module GmbH. The APD elements are designed to work in the linear (non-Geiger) mode. Each pixel will provide the time of flight measurement, and, due to the linear detection mode, allowing the detection of three successive echoes. The resolution in depth is 15 cm, the maximum repetition rate is 4 kHz. We discuss various sensor concepts regarding possible applications and their dependence on system parameters like field of view, frame rate, spatial resolution and range of operation.

Fabrication of large dual-polarized multichroic TES bolometer arrays for CMB measurements with the SPT-3G camera

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posada, C. M.; Ade, P. A. R.; Ahmed, Z.

2015-08-11

This work presents the procedures used by Argonne National Laboratory to fabricate large arrays of multichroic transition-edge sensor (TES) bolometers for cosmic microwave background (CMB) measurements. These detectors will be assembled into the focal plane for the SPT-3G camera, the third generation CMB camera to be installed in the South Pole Telescope. The complete SPT-3G camera will have approximately 2690 pixels, for a total of 16,140 TES bolometric detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a Nb microstrip line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed tomore » the respective Ti/Au TES bolometers. There are six TES bolometer detectors per pixel, which allow for measurements of three band-passes (95 GHz, 150 GHz and 220 GHz) and two polarizations. The steps involved in the monolithic fabrication of these detector arrays are presented here in detail. Patterns are defined using a combination of stepper and contact lithography. The misalignment between layers is kept below 200 nm. The overall fabrication involves a total of 16 processes, including reactive and magnetron sputtering, reactive ion etching, inductively coupled plasma etching and chemical etching.« less

NGST fine guidance sensor

NASA Astrophysics Data System (ADS)

Rowlands, Neil; Hutchings, John; Murowinski, Richard G.; Alexander, Russ

2003-03-01

Instrumentation for the Next Generation Space Telescope (NGST) is currently in the Phase A definition stage. We have developed a concept for the NGST Fine Guidance Sensor or FGS. The FGS is a detector array based imager which resides in the NGST focal plane. We report here on tradeoff studies aimed at defining an overall configuration of the FGS which will meet the performance and interface requirements. A key performance requirement is a noise equivalent angle of 3 milli-arcseconds to be achieved with 95% probability for any pointing of the observatory in the celestial sphere. A key interface requirement is compatibility with the architecture of the Integrated Science Instrument Module (ISIM). The concept developed consists of two independent and redundant FGS modules, each with a 4' x 2' field of view covered by two 2048 x 2048 infrared detector arrays, providing 60 milli-arcsecond sampling. Performance modeling supporting the choice of this architecture and the trade space considered is presented. Each module has a set of readout electronics which perform star detection, pixel-by-pixel correction, and in fine guiding mode, centroid calculation. These readout electronics communicate with the ISIM Command &Data Handling Units where the FGS control software is based. Rationale for this choice of architecture is also presented.

Comparison of Measured Leakage Current Distributions with Calculated Damage Energy Distributions in HgCdTe

NASA Technical Reports Server (NTRS)

Marshall, C. J.; Ladbury, R.; Marshall, P. W.; Reed, R. A.; Howe, C.; Weller, B.; Mendenhall, M.; Waczynski, A.; Jordan, T. M.; Fodness, B.

2006-01-01

This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distribution were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Car10 code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. The nuclear elastic component (also calculated using the MCNPX) has a negligible effect on the shape of the damage distribution. The Coulombic contribution was calculated using MRED [3,4], a Geant4 [4,5] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

Retroreflector field tracker. [noncontact optical position sensor for space application

NASA Technical Reports Server (NTRS)

Wargocki, F. E.; Ray, A. J.; Hall, G. E.

1984-01-01

An electrooptical position-measuring instrument, the Retroreflector Field Tracker or RFT, is described. It is part of the Dynamic Augmentation Experiment - a part of the payload of Space Shuttle flight 41-D in Summer 1984. The tracker measures and outputs the position of 23 reflective targets placed on a 32-m solar array to provide data for determination of the dynamics of the lightweight structure. The sensor uses a 256 x 256 pixel CID detector; the processor electronics include three Z-80 microprocessors. A pulsed laser diode illuminator is used.

Wave analysis of a plenoptic system and its applications

NASA Astrophysics Data System (ADS)

Shroff, Sapna A.; Berkner, Kathrin

2013-03-01

Traditional imaging systems directly image a 2D object plane on to the sensor. Plenoptic imaging systems contain a lenslet array at the conventional image plane and a sensor at the back focal plane of the lenslet array. In this configuration the data captured at the sensor is not a direct image of the object. Each lenslet effectively images the aperture of the main imaging lens at the sensor. Therefore the sensor data retains angular light-field information which can be used for a posteriori digital computation of multi-angle images and axially refocused images. If a filter array, containing spectral filters or neutral density or polarization filters, is placed at the pupil aperture of the main imaging lens, then each lenslet images the filters on to the sensor. This enables the digital separation of multiple filter modalities giving single snapshot, multi-modal images. Due to the diversity of potential applications of plenoptic systems, their investigation is increasing. As the application space moves towards microscopes and other complex systems, and as pixel sizes become smaller, the consideration of diffraction effects in these systems becomes increasingly important. We discuss a plenoptic system and its wave propagation analysis for both coherent and incoherent imaging. We simulate a system response using our analysis and discuss various applications of the system response pertaining to plenoptic system design, implementation and calibration.

Circuit models applied to the design of a novel uncooled infrared focal plane array structure

NASA Astrophysics Data System (ADS)

Shi, Shali; Chen, Dapeng; Li, Chaobo; Jiao, Binbin; Ou, Yi; Jing, Yupeng; Ye, Tianchun; Guo, Zheying; Zhang, Qingchuan; Wu, Xiaoping

2007-05-01

This paper describes a circuit model applied to the simulation of the thermal response frequency of a novel substrate-free single-layer bi-material cantilever microstructure used as the focal plane array (FPA) in an uncooled opto-mechanical infrared imaging system. In order to obtain a high detection of the IR object, gold (Au) is coated alternately on the silicon nitride (SiNx) cantilevers of the pixels (Shi S et al Sensors and Actuators A at press), whereas the thermal response frequency decreases (Zhao Y 2002 Dissertation University of California, Berkeley). A circuit model for such a cantilever microstructure is proposed to be applied to evaluate the thermal response performance. The pixel's thermal frequency (1/τth) is calculated to be 10 Hz under the optimized design parameters, which is compatible with the response of optical readout systems and human eyes.

TES-Based X-Ray Microcalorimeter Performances Under AC Bias and FDM for Athena

NASA Technical Reports Server (NTRS)

Akamatsu, H.; Gottardi, L.; de Vries, C. P.; Adams, J. S.; Bandler, S. R.; Bruijn, M. P.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Gao, J. R.;

High-density arrays of x-ray microcalorimeters for Constellation-X

NASA Astrophysics Data System (ADS)

Kilbourne, Caroline A.; Bandler, Simon R.; Brown, Ari D.; Chervenak, James A.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Iyomoto, Naoko; Kelley, Richard L.; Porter, F. Scott; Saab, Tarek; Sadleir, John; White, Jennifer

2006-06-01

We have been developing x-ray microcalorimeters for the Constellation-X mission. Devices based on superconducting transition-edge sensors (TES) have demonstrated the potential to meet the Constellation-X requirements for spectral resolution, speed, and array scale (> 1000 pixels) in a close-packed geometry. In our part of the GSFC/NIST collaboration on this technology development, we have been concentrating on the fabrication of arrays of pixels suitable for the Constellation-X reference configuration. We have fabricated 8x8 arrays with 0.25-mm pixels arranged with 92% fill factor. The pixels are based on Mo/Au TES and Bi/Cu or Au/Bi absorbers. We have achieved a resolution of 4.0 eV FWHM at 6 keV in such devices, which meets the Constellation-X resolution requirement at 6 keV. Studies of the thermal transport in our Bi/Cu absorbers have shown that, while there is room for improvement, for 0.25-mm pixels the standard absorber design is adequate to avoid unacceptable line-broadening from position dependence caused by thermal diffusion. In order to improve reproducibility and to push closer to the 2-eV goal at 6 keV, however, we are refining the design of the TES and the interface to the absorber. Recent efforts to introduce a barrier layer between the Bi and the Mo/Au to avoid variable interface chemistry and thus improve the reproducibility of device characteristics have thus far yielded unsatisfactory results. However, we have developed a new set of absorber designs with contacts to the TES engineered to allow contact only in regions that do not serve as the active thermometer. We have further constrained the design so that a low-resistance absorber will not electrically short the TES. It is with such a design that we have achieved 4.0 eV resolution at 6 keV.

Advanced microlens and color filter process technology for the high-efficiency CMOS and CCD image sensors

NASA Astrophysics Data System (ADS)

Fan, Yang-Tung; Peng, Chiou-Shian; Chu, Cheng-Yu

2000-12-01

New markets are emerging for digital electronic image device, especially in visual communications, PC camera, mobile/cell phone, security system, toys, vehicle image system and computer peripherals for document capture. To enable one-chip image system that image sensor is with a full digital interface, can make image capture devices in our daily lives. Adding a color filter to such image sensor in a pattern of mosaics pixel or wide stripes can make image more real and colorful. We can say 'color filter makes the life more colorful color filter is? Color filter means can filter image light source except the color with specific wavelength and transmittance that is same as color filter itself. Color filter process is coating and patterning green, red and blue (or cyan, magenta and yellow) mosaic resists onto matched pixel in image sensing array pixels. According to the signal caught from each pixel, we can figure out the environment image picture. Widely use of digital electronic camera and multimedia applications today makes the feature of color filter becoming bright. Although it has challenge but it is very worthy to develop the process of color filter. We provide the best service on shorter cycle time, excellent color quality, high and stable yield. The key issues of advanced color process have to be solved and implemented are planarization and micro-lens technology. Lost of key points of color filter process technology have to consider will also be described in this paper.

Relating transverse ray error and light fields in plenoptic camera images

NASA Astrophysics Data System (ADS)

Schwiegerling, Jim; Tyo, J. Scott

2013-09-01

Plenoptic cameras have emerged in recent years as a technology for capturing light field data in a single snapshot. A conventional digital camera can be modified with the addition of a lenslet array to create a plenoptic camera. The camera image is focused onto the lenslet array. The lenslet array is placed over the camera sensor such that each lenslet forms an image of the exit pupil onto the sensor. The resultant image is an array of circular exit pupil images, each corresponding to the overlying lenslet. The position of the lenslet encodes the spatial information of the scene, whereas as the sensor pixels encode the angular information for light incident on the lenslet. The 4D light field is therefore described by the 2D spatial information and 2D angular information captured by the plenoptic camera. In aberration theory, the transverse ray error relates the pupil coordinates of a given ray to its deviation from the ideal image point in the image plane and is consequently a 4D function as well. We demonstrate a technique for modifying the traditional transverse ray error equations to recover the 4D light field of a general scene. In the case of a well corrected optical system, this light field is easily related to the depth of various objects in the scene. Finally, the effects of sampling with both the lenslet array and the camera sensor on the 4D light field data are analyzed to illustrate the limitations of such systems.

The 160 TES bolometer read-out using FDM for SAFARI

NASA Astrophysics Data System (ADS)

Hijmering, R. A.; den Hartog, R. H.; van der Linden, A. J.; Ridder, M.; Bruijn, M. P.; van der Kuur, J.; van Leeuwen, B. J.; van Winden, P.; Jackson, B.

2014-07-01

For the read out of the Transition Edge Sensors (TES) bolometer arrays of the SAFARI instrument on the Japanese background-limited far-IR SPICA mission SRON is developing a Frequency Domain Multiplexing (FDM) read-out system. The next step after the successful demonstration of the read out of 38 TES bolometers using FDM was to demonstrate the FDM readout of the required 160 TES bolometers. Of the 160 LC filter and TES bolometer chains 151 have been connected and after cooldown 148 of the resonances could be identified. Although initial operation and locking of the pixels went smoothly the experiment revealed several complications. In this paper we describe the 160 pixel FDM set-up, show the results and discuss the issues faced during operation of the 160 pixel FDM experiment.

High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection

NASA Technical Reports Server (NTRS)

Ohara, Tetsuo

2012-01-01

A sub-aperture stitching optical interferometer can provide a cost-effective solution for an in situ metrology tool for large optics; however, the currently available technologies are not suitable for high-speed and real-time continuous scan. NanoWave s SPPE (Scanning Probe Position Encoder) has been proven to exhibit excellent stability and sub-nanometer precision with a large dynamic range. This same technology can transform many optical interferometers into real-time subnanometer precision tools with only minor modification. The proposed field-programmable gate array (FPGA) signal processing concept, coupled with a new-generation, high-speed, mega-pixel CMOS (complementary metal-oxide semiconductor) image sensor, enables high speed (>1 m/s) and real-time continuous surface profiling that is insensitive to variation of pixel sensitivity and/or optical transmission/reflection. This is especially useful for large optics surface profiling.

3D Spatial and Spectral Fusion of Terrestrial Hyperspectral Imagery and Lidar for Hyperspectral Image Shadow Restoration Applied to a Geologic Outcrop

NASA Astrophysics Data System (ADS)

Hartzell, P. J.; Glennie, C. L.; Hauser, D. L.; Okyay, U.; Khan, S.; Finnegan, D. C.

2016-12-01

Recent advances in remote sensing technology have expanded the acquisition and fusion of active lidar and passive hyperspectral imagery (HSI) from an exclusively airborne technique to terrestrial modalities. This enables high resolution 3D spatial and spectral quantification of vertical geologic structures for applications such as virtual 3D rock outcrop models for hydrocarbon reservoir analog analysis and mineral quantification in open pit mining environments. In contrast to airborne observation geometry, the vertical surfaces observed by horizontal-viewing terrestrial HSI sensors are prone to extensive topography-induced solar shadowing, which leads to reduced pixel classification accuracy or outright removal of shadowed pixels from analysis tasks. Using a precisely calibrated and registered offset cylindrical linear array camera model, we demonstrate the use of 3D lidar data for sub-pixel HSI shadow detection and the restoration of the shadowed pixel spectra via empirical methods that utilize illuminated and shadowed pixels of similar material composition. We further introduce a new HSI shadow restoration technique that leverages collocated backscattered lidar intensity, which is resistant to solar conditions, obtained by projecting the 3D lidar points through the HSI camera model into HSI pixel space. Using ratios derived from the overlapping lidar laser and HSI wavelengths, restored shadow pixel spectra are approximated using a simple scale factor. Simulations of multiple lidar wavelengths, i.e., multi-spectral lidar, indicate the potential for robust HSI spectral restoration that is independent of the complexity and costs associated with rigorous radiometric transfer models, which have yet to be developed for horizontal-viewing terrestrial HSI sensors. The spectral restoration performance is quantified through HSI pixel classification consistency between full sun and partial sun exposures of a single geologic outcrop.

Circuit for high resolution decoding of multi-anode microchannel array detectors

NASA Technical Reports Server (NTRS)

Kasle, David B. (Inventor)

1995-01-01

A circuit for high resolution decoding of multi-anode microchannel array detectors consisting of input registers accepting transient inputs from the anode array; anode encoding logic circuits connected to the input registers; midpoint pipeline registers connected to the anode encoding logic circuits; and pixel decoding logic circuits connected to the midpoint pipeline registers is described. A high resolution algorithm circuit operates in parallel with the pixel decoding logic circuit and computes a high resolution least significant bit to enhance the multianode microchannel array detector's spatial resolution by halving the pixel size and doubling the number of pixels in each axis of the anode array. A multiplexer is connected to the pixel decoding logic circuit and allows a user selectable pixel address output according to the actual multi-anode microchannel array detector anode array size. An output register concatenates the high resolution least significant bit onto the standard ten bit pixel address location to provide an eleven bit pixel address, and also stores the full eleven bit pixel address. A timing and control state machine is connected to the input registers, the anode encoding logic circuits, and the output register for managing the overall operation of the circuit.

How many pixels does it take to make a good 4"×6" print? Pixel count wars revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2011-01-01

In the early 1980's the future of conventional silver-halide photographic systems was of great concern due to the potential introduction of electronic imaging systems then typified by the Sony Mavica analog electronic camera. The focus was on the quality of film-based systems as expressed in the number of equivalent number pixels and bits-per-pixel, and how many pixels would be required to create an equivalent quality image from a digital camera. It was found that 35-mm frames, for ISO 100 color negative film, contained equivalent pixels of 12 microns for a total of 18 million pixels per frame (6 million pixels per layer) with about 6 bits of information per pixel; the introduction of new emulsion technology, tabular AgX grains, increased the value to 8 bit per pixel. Higher ISO speed films had larger equivalent pixels, fewer pixels per frame, but retained the 8 bits per pixel. Further work found that a high quality 3.5" x 5.25" print could be obtained from a three layer system containing 1300 x 1950 pixels per layer or about 7.6 million pixels in all. In short, it became clear that when a digital camera contained about 6 million pixels (in a single layer using a color filter array and appropriate image processing) that digital systems would challenge and replace conventional film-based system for the consumer market. By 2005 this became the reality. Since 2005 there has been a "pixel war" raging amongst digital camera makers. The question arises about just how many pixels are required and are all pixels equal? This paper will provide a practical look at how many pixels are needed for a good print based on the form factor of the sensor (sensor size) and the effective optical modulation transfer function (optical spread function) of the camera lens. Is it better to have 16 million, 5.7-micron pixels or 6 million 7.8-micron pixels? How does intrinsic (no electronic boost) ISO speed and exposure latitude vary with pixel size? A systematic review of these issues will be provided within the context of image quality and ISO speed models developed over the last 15 years.

Third-generation imaging sensor system concepts

NASA Astrophysics Data System (ADS)

Reago, Donald A.; Horn, Stuart B.; Campbell, James, Jr.; Vollmerhausen, Richard H.

1999-07-01

Second generation forward looking infrared sensors, based on either parallel scanning, long wave (8 - 12 um) time delay and integration HgCdTe detectors or mid wave (3 - 5 um), medium format staring (640 X 480 pixels) InSb detectors, are being fielded. The science and technology community is now turning its attention toward the definition of a future third generation of FLIR sensors, based on emerging research and development efforts. Modeled third generation sensor performance demonstrates a significant improvement in performance over second generation, resulting in enhanced lethality and survivability on the future battlefield. In this paper we present the current thinking on what third generation sensors systems will be and the resulting requirements for third generation focal plane array detectors. Three classes of sensors have been identified. The high performance sensor will contain a megapixel or larger array with at least two colors. Higher operating temperatures will also be the goal here so that power and weight can be reduced. A high performance uncooled sensor is also envisioned that will perform somewhere between first and second generation cooled detectors, but at significantly lower cost, weight, and power. The final third generation sensor is a very low cost micro sensor. This sensor can open up a whole new IR market because of its small size, weight, and cost. Future unattended throwaway sensors, micro UAVs, and helmet mounted IR cameras will be the result of this new class.

Performance benefits and limitations of a camera network

NASA Astrophysics Data System (ADS)

Carr, Peter; Thomas, Paul J.; Hornsey, Richard

2005-06-01

Visual information is of vital significance to both animals and artificial systems. The majority of mammals rely on two images, each with a resolution of 107-108 'pixels' per image. At the other extreme are insect eyes where the field of view is segmented into 103-105 images, each comprising effectively one pixel/image. The great majority of artificial imaging systems lie nearer to the mammalian characteristics in this parameter space, although electronic compound eyes have been developed in this laboratory and elsewhere. If the definition of a vision system is expanded to include networks or swarms of sensor elements, then schools of fish, flocks of birds and ant or termite colonies occupy a region where the number of images and the pixels/image may be comparable. A useful system might then have 105 imagers, each with about 104-105 pixels. Artificial analogs to these situations include sensor webs, smart dust and co-ordinated robot clusters. As an extreme example, we might consider the collective vision system represented by the imminent existence of ~109 cellular telephones, each with a one-megapixel camera. Unoccupied regions in this resolution-segmentation parameter space suggest opportunities for innovative artificial sensor network systems. Essential for the full exploitation of these opportunities is the availability of custom CMOS image sensor chips whose characteristics can be tailored to the application. Key attributes of such a chip set might include integrated image processing and control, low cost, and low power. This paper compares selected experimentally determined system specifications for an inward-looking array of 12 cameras with the aid of a camera-network model developed to explore the tradeoff between camera resolution and the number of cameras.

Report of the sensor readout electronics panel

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Carson, J.; Kleinhans, W.; Kosonocky, W.; Kozlowski, L.; Pecsalski, A.; Silver, A.; Spieler, H.; Woolaway, J.

1991-01-01

The findings of the Sensor Readout Electronics Panel are summarized in regard to technology assessment and recommended development plans. In addition to two specific readout issues, cryogenic readouts and sub-electron noise, the panel considered three advanced technology areas that impact the ability to achieve large format sensor arrays. These are mega-pixel focal plane packaging issues, focal plane to data processing module interfaces, and event driven readout architectures. Development in each of these five areas was judged to have significant impact in enabling the sensor performance desired for the Astrotech 21 mission set. Other readout issues, such as focal plane signal processing or other high volume data acquisition applications important for Eos-type mapping, were determined not to be relevant for astrophysics science goals.

Imaging properties of pixellated scintillators with deep pixels

PubMed Central

Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

2015-01-01

We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10×10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm × 1mm × 20 mm pixels) made by Proteus, Inc. with similar 10×10 arrays of LSO:Ce and BGO (1mm × 1mm × 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10×10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors. PMID:26236070

Imaging properties of pixellated scintillators with deep pixels

NASA Astrophysics Data System (ADS)

Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

2014-09-01

We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10x10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm x 1mm x 20 mm pixels) made by Proteus, Inc. with similar 10x10 arrays of LSO:Ce and BGO (1mm x 1mm x 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10x10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors.

High speed CMOS imager with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2001-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

Experience from the construction and operation of the STAR PXL detector

NASA Astrophysics Data System (ADS)

Greiner, L.; Anderssen, E. C.; Contin, G.; Schambach, J.; Silber, J.; Stezelberger, T.; Sun, X.; Szelezniak, M.; Vu, C.; Wieman, H. H.; Woodmansee, S.

2015-04-01

A new silicon based vertex detector called the Heavy Flavor Tracker (HFT) was installed at the Soleniodal Tracker At RHIC (STAR) experiment for the Relativistic Heavy Ion Collider (RHIC) 2014 heavy ion run to improve the vertex resolution and extend the measurement capabilities of STAR in the heavy flavor domain. The HFT consists of four concentric cylinders around the STAR interaction point composed of three different silicon detector technologies based on strips, pads and for the first time in an accelerator experiment CMOS monolithic active pixels (MAPS) . The two innermost layers at a radius of 2.8 cm and 8 cm from the beam line are constructed with 400 high resolution MAPS sensors arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors giving a total silicon area of 0.16 m2. Each sensor consists of a pixel array of nearly 1 million pixels with a pitch of 20.7 μm with column-level discriminators, zero-suppression circuitry and output buffer memory integrated into one silicon die with a sensitive area of ~ 3.8 cm2. The pixel (PXL) detector has a low power dissipation of 170 mW/cm2, which allows air cooling. This results in a global material budget of 0.5% radiation length per layer for detector used in this run. A novel mechanical approach to detector insertion allows for the installation and integration of the pixel sub detector within a 12 hour period during an on-going STAR run. The detector specifications, experience from the construction and operation, lessons learned and initial measurements of the PXL performance in the 200 GeV Au-Au run will be presented.

Determination of the conversion gain and the accuracy of its measurement for detector elements and arrays

NASA Astrophysics Data System (ADS)

Beecken, B. P.; Fossum, E. R.

1996-07-01

Standard statistical theory is used to calculate how the accuracy of a conversion-gain measurement depends on the number of samples. During the development of a theoretical basis for this calculation, a model is developed that predicts how the noise levels from different elements of an ideal detector array are distributed. The model can also be used to determine what dependence the accuracy of measured noise has on the size of the sample. These features have been confirmed by experiment, thus enhancing the credibility of the method for calculating the uncertainty of a measured conversion gain. detector-array uniformity, charge coupled device, active pixel sensor.

The Microwave SQUID Multiplexer

NASA Astrophysics Data System (ADS)

Mates, John Arthur Benson

2011-12-01

This thesis describes a multiplexer of Superconducting Quantum Interference Devices (SQUIDs) with low-noise, ultra-low power dissipation, and great scalability. The multiplexer circuit measures the magnetic flux in a large number of unshunted rf SQUIDs by coupling each SQUID to a superconducting microwave resonator tuned to a unique resonance frequency and driving the resonators from a common feedline. A superposition of microwave tones measures each SQUID simultaneously using only two coaxial cables between the cryogenic device and room temperature. This multiplexer will enable the instrumentation of arrays with hundreds of thousands of low-temperature detectors for new applications in cosmology, materials analysis, and nuclear non-proliferation. The driving application of the Microwave SQUID Multiplexer is the readout of large arrays of superconducting transition-edge sensors, by some figures of merit the most sensitive detectors of electromagnetic signals over a span of more than nine orders of magnitude in energy, from 40 GHz microwaves to 200 keV gamma rays. Modern transition-edge sensors have noise-equivalent power as low as 10-20 W / Hz1/2 and energy resolution as good as 2 eV at 6 keV. These per-pixel sensitivities approach theoretical limits set by the underlying signals, motivating a rapid increase in pixel count to access new science. Compelling applications, like the non-destructive assay of nuclear material for treaty verification or the search for primordial gravity waves from inflation use arrays of these detectors to increase collection area or tile a focal plane. We developed three generations of SQUID multiplexers, optimizing the first for flux noise 0.17 muPhi0 / Hz1/2, the second for input current noise 19 pA / Hz1/2, and the last for practical multiplexing of large arrays of cosmic microwave background polarimeters based on transition-edge sensors. Using the last design we demonstrated multiplexed readout of prototype polarimeters with the performance required for the future development of a large-scale astronomical instrument.

Large arrays of dual-polarized multichroic TES detectors for CMB measurements with the SPT-3G receiver

DOE PAGES

Holland, Wayne S.; Zmuidzinas, Jonas; Posada, Chrystian M.; ...

2016-07-19

Now, detectors for cosmic microwave background (CMB) experiments are background limited, so a straightforward alternative to improve sensitivity is to increase the number of detectors. Large arrays of multichroic pixels constitute an economical approach to increasing the number of detectors within a given focal plane area. We present the fabrication of large arrays of dual-polarized multichroic transition-edge-sensor (TES) bolometers for the South Pole Telescope third-generation CMB receiver (SPT-3G). The complete SPT-3G receiver will have 2690 pixels, each with six detectors, allowing for individual measurement of three spectral bands (centered at 95 GHz, 150 GHz and 220 GHz) in two orthogonalmore » polarizations. In total, the SPT-3G focal plane will have 16140 detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a niobium microstrip transmission line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed to the respective Ti/Au TES sensors. Detectors are read out using a 64x frequency domain multiplexing (fMux) scheme. The microfabrication of the SPT-3G detector arrays involves a total of 18 processes, including 13 lithography steps. Together with the fabrication process, the effect of processing on the Ti/Au TES's T-c is discussed. In addition, detectors fabricated with Ti/Au TES films with Tc between 400 mK 560 mK are presented and their thermal characteristics are evaluated. Optical characterization of the arrays is presented as well, indicating that the response of the detectors is in good agreement with the design values for all three spectral bands (95 GHz, 150 GHz, and 220 GHz). The measured optical efficiency of the detectors is between 0.3 and 0.8. Our results discussed here are extracted from a batch of research of development wafers used to develop the baseline process for the fabrication of the arrays of detectors to be deployed with the SPT-3G receiver. Results from these research and development wafers have been incorporated into the fabrication process to get the baseline fabrication process presented here. SPT-3G is scheduled to deploy to the South Pole Telescope in late 2016.« less

Large arrays of dual-polarized multichroic TES detectors for CMB measurements with the SPT-3G receiver

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holland, Wayne S.; Zmuidzinas, Jonas; Posada, Chrystian M.

Now, detectors for cosmic microwave background (CMB) experiments are background limited, so a straightforward alternative to improve sensitivity is to increase the number of detectors. Large arrays of multichroic pixels constitute an economical approach to increasing the number of detectors within a given focal plane area. We present the fabrication of large arrays of dual-polarized multichroic transition-edge-sensor (TES) bolometers for the South Pole Telescope third-generation CMB receiver (SPT-3G). The complete SPT-3G receiver will have 2690 pixels, each with six detectors, allowing for individual measurement of three spectral bands (centered at 95 GHz, 150 GHz and 220 GHz) in two orthogonalmore » polarizations. In total, the SPT-3G focal plane will have 16140 detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a niobium microstrip transmission line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed to the respective Ti/Au TES sensors. Detectors are read out using a 64x frequency domain multiplexing (fMux) scheme. The microfabrication of the SPT-3G detector arrays involves a total of 18 processes, including 13 lithography steps. Together with the fabrication process, the effect of processing on the Ti/Au TES's T-c is discussed. In addition, detectors fabricated with Ti/Au TES films with Tc between 400 mK 560 mK are presented and their thermal characteristics are evaluated. Optical characterization of the arrays is presented as well, indicating that the response of the detectors is in good agreement with the design values for all three spectral bands (95 GHz, 150 GHz, and 220 GHz). The measured optical efficiency of the detectors is between 0.3 and 0.8. Our results discussed here are extracted from a batch of research of development wafers used to develop the baseline process for the fabrication of the arrays of detectors to be deployed with the SPT-3G receiver. Results from these research and development wafers have been incorporated into the fabrication process to get the baseline fabrication process presented here. SPT-3G is scheduled to deploy to the South Pole Telescope in late 2016.« less

Large arrays of dual-polarized multichroic TES detectors for CMB measurements with the SPT-3G receiver

NASA Astrophysics Data System (ADS)

Posada, Chrystian M.; Ade, Peter A. R.; Anderson, Adam J.; Avva, Jessica; Ahmed, Zeeshan; Arnold, Kam S.; Austermann, Jason; Bender, Amy N.; Benson, Bradford A.; Bleem, Lindsey; Byrum, Karen; Carlstrom, John E.; Carter, Faustin W.; Chang, Clarence; Cho, Hsiao-Mei; Cukierman, Ari; Czaplewski, David A.; Ding, Junjia; Divan, Ralu N. S.; de Haan, Tijmen; Dobbs, Matt; Dutcher, Daniel; Everett, Wenderline; Gannon, Renae N.; Guyser, Robert J.; Halverson, Nils W.; Harrington, Nicholas L.; Hattori, Kaori; Henning, Jason W.; Hilton, Gene C.; Holzapfel, William L.; Huang, Nicholas; Irwin, Kent D.; Jeong, Oliver; Khaire, Trupti; Korman, Milo; Kubik, Donna L.; Kuo, Chao-Lin; Lee, Adrian T.; Leitch, Erik M.; Lendinez Escudero, Sergi; Meyer, Stephan S.; Miller, Christina S.; Montgomery, Joshua; Nadolski, Andrew; Natoli, Tyler J.; Nguyen, Hogan; Novosad, Valentyn; Padin, Stephen; Pan, Zhaodi; Pearson, John E.; Rahlin, Alexandra; Reichardt, Christian L.; Ruhl, John E.; Saliwanchik, Benjamin; Shirley, Ian; Sayre, James T.; Shariff, Jamil A.; Shirokoff, Erik D.; Stan, Liliana; Stark, Antony A.; Sobrin, Joshua; Story, Kyle; Suzuki, Aritoki; Tang, Qing Yang; Thakur, Ritoban B.; Thompson, Keith L.; Tucker, Carole E.; Vanderlinde, Keith; Vieira, Joaquin D.; Wang, Gensheng; Whitehorn, Nathan; Yefremenko, Volodymyr; Yoon, Ki Won

2016-07-01

Detectors for cosmic microwave background (CMB) experiments are now essentially background limited, so a straightforward alternative to improve sensitivity is to increase the number of detectors. Large arrays of multichroic pixels constitute an economical approach to increasing the number of detectors within a given focal plane area. Here, we present the fabrication of large arrays of dual-polarized multichroic transition-edge-sensor (TES) bolometers for the South Pole Telescope third-generation CMB receiver (SPT-3G). The complete SPT-3G receiver will have 2690 pixels, each with six detectors, allowing for individual measurement of three spectral bands (centered at 95 GHz, 150 GHz and 220 GHz) in two orthogonal polarizations. In total, the SPT-3G focal plane will have 16140 detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a niobium microstrip transmission line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed to the respective Ti/Au TES sensors. Detectors are read out using a 64x frequency domain multiplexing (fMux) scheme. The microfabrication of the SPT-3G detector arrays involves a total of 18 processes, including 13 lithography steps. Together with the fabrication process, the effect of processing on the Ti/Au TES's Tc is discussed. In addition, detectors fabricated with Ti/Au TES films with Tc between 400 mK 560 mK are presented and their thermal characteristics are evaluated. Optical characterization of the arrays is presented as well, indicating that the response of the detectors is in good agreement with the design values for all three spectral bands (95 GHz, 150 GHz, and 220 GHz). The measured optical efficiency of the detectors is between 0.3 and 0.8. Results discussed here are extracted from a batch of research of development wafers used to develop the baseline process for the fabrication of the arrays of detectors to be deployed with the SPT-3G receiver. Results from these research and development wafers have been incorporated into the fabrication process to get the baseline fabrication process presented here. SPT-3G is scheduled to deploy to the South Pole Telescope in late 2016.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

G-Channel Restoration for RWB CFA with Double-Exposed W Channel

PubMed Central

Park, Chulhee; Song, Ki Sun; Kang, Moon Gi

2017-01-01

In this paper, we propose a green (G)-channel restoration for a red–white–blue (RWB) color filter array (CFA) image sensor using the dual sampling technique. By using white (W) pixels instead of G pixels, the RWB CFA provides high-sensitivity imaging and an improved signal-to-noise ratio compared to the Bayer CFA. However, owing to this high sensitivity, the W pixel values become rapidly over-saturated before the red–blue (RB) pixel values reach the appropriate levels. Because the missing G color information included in the W channel cannot be restored with a saturated W, multiple captures with dual sampling are necessary to solve this early W-pixel saturation problem. Each W pixel has a different exposure time when compared to those of the R and B pixels, because the W pixels are double-exposed. Therefore, a RWB-to-RGB color conversion method is required in order to restore the G color information, using a double-exposed W channel. The proposed G-channel restoration algorithm restores G color information from the W channel by considering the energy difference caused by the different exposure times. Using the proposed method, the RGB full-color image can be obtained while maintaining the high-sensitivity characteristic of the W pixels. PMID:28165425

G-Channel Restoration for RWB CFA with Double-Exposed W Channel.

PubMed

Park, Chulhee; Song, Ki Sun; Kang, Moon Gi

2017-02-05

In this paper, we propose a green (G)-channel restoration for a red-white-blue (RWB) color filter array (CFA) image sensor using the dual sampling technique. By using white (W) pixels instead of G pixels, the RWB CFA provides high-sensitivity imaging and an improved signal-to-noise ratio compared to the Bayer CFA. However, owing to this high sensitivity, the W pixel values become rapidly over-saturated before the red-blue (RB) pixel values reach the appropriate levels. Because the missing G color information included in the W channel cannot be restored with a saturated W, multiple captures with dual sampling are necessary to solve this early W-pixel saturation problem. Each W pixel has a different exposure time when compared to those of the R and B pixels, because the W pixels are double-exposed. Therefore, a RWB-to-RGB color conversion method is required in order to restore the G color information, using a double-exposed W channel. The proposed G-channel restoration algorithm restores G color information from the W channel by considering the energy difference caused by the different exposure times. Using the proposed method, the RGB full-color image can be obtained while maintaining the high-sensitivity characteristic of the W pixels.

A novel digital image sensor with row wise gain compensation for Hyper Spectral Imager (HySI) application

NASA Astrophysics Data System (ADS)

Lin, Shengmin; Lin, Chi-Pin; Wang, Weng-Lyang; Hsiao, Feng-Ke; Sikora, Robert

2009-08-01

A 256x512 element digital image sensor has been developed which has a large pixel size, slow scan and low power consumption for Hyper Spectral Imager (HySI) applications. The device is a mixed mode, silicon on chip (SOC) IC. It combines analog circuitry, digital circuitry and optical sensor circuitry into a single chip. This chip integrates a 256x512 active pixel sensor array, a programming gain amplifier (PGA) for row wise gain setting, I2C interface, SRAM, 12 bit analog to digital convertor (ADC), voltage regulator, low voltage differential signal (LVDS) and timing generator. The device can be used for 256 pixels of spatial resolution and 512 bands of spectral resolution ranged from 400 nm to 950 nm in wavelength. In row wise gain readout mode, one can set a different gain on each row of the photo detector by storing the gain setting data on the SRAM thru the I2C interface. This unique row wise gain setting can be used to compensate the silicon spectral response non-uniformity problem. Due to this unique function, the device is suitable for hyper-spectral imager applications. The HySI camera located on-board the Chandrayaan-1 satellite, was successfully launched to the moon on Oct. 22, 2008. The device is currently mapping the moon and sending back excellent images of the moon surface. The device design and the moon image data will be presented in the paper.

Data acquisition system

DOEpatents

Shapiro, Stephen L.; Mani, Sudhindra; Atlas, Eugene L.; Cords, Dieter H. W.; Holbrook, Britt

1997-01-01

A data acquisition circuit for a particle detection system that allows for time tagging of particles detected by the system. The particle detection system screens out background noise and discriminate between hits from scattered and unscattered particles. The detection system can also be adapted to detect a wide variety of particle types. The detection system utilizes a particle detection pixel array, each pixel containing a back-biased PIN diode, and a data acquisition pixel array. Each pixel in the particle detection pixel array is in electrical contact with a pixel in the data acquisition pixel array. In response to a particle hit, the affected PIN diodes generate a current, which is detected by the corresponding data acquisition pixels. This current is integrated to produce a voltage across a capacitor, the voltage being related to the amount of energy deposited in the pixel by the particle. The current is also used to trigger a read of the pixel hit by the particle.

NeuroSeek dual-color image processing infrared focal plane array

NASA Astrophysics Data System (ADS)

McCarley, Paul L.; Massie, Mark A.; Baxter, Christopher R.; Huynh, Buu L.

1998-09-01

Several technologies have been developed in recent years to advance the state of the art of IR sensor systems including dual color affordable focal planes, on-focal plane array biologically inspired image and signal processing techniques and spectral sensing techniques. Pacific Advanced Technology (PAT) and the Air Force Research Lab Munitions Directorate have developed a system which incorporates the best of these capabilities into a single device. The 'NeuroSeek' device integrates these technologies into an IR focal plane array (FPA) which combines multicolor Midwave IR/Longwave IR radiometric response with on-focal plane 'smart' neuromorphic analog image processing. The readout and processing integrated circuit very large scale integration chip which was developed under this effort will be hybridized to a dual color detector array to produce the NeuroSeek FPA, which will have the capability to fuse multiple pixel-based sensor inputs directly on the focal plane. Great advantages are afforded by application of massively parallel processing algorithms to image data in the analog domain; the high speed and low power consumption of this device mimic operations performed in the human retina.

The DFMS sensor of ROSINA onboard Rosetta: A computer-assisted approach to resolve mass calibration, flux calibration, and fragmentation issues

NASA Astrophysics Data System (ADS)

Dhooghe, Frederik; De Keyser, Johan; Altwegg, Kathrin; Calmonte, Ursina; Fuselier, Stephen; Hässig, Myrtha; Berthelier, Jean-Jacques; Mall, Urs; Gombosi, Tamas; Fiethe, Björn

2014-05-01

Rosetta will rendezvous with comet 67P/Churyumov-Gerasimenko in May 2014. The Rosetta Orbiter Spectrometer for Ion and Neutral Analysis (ROSINA) instrument comprises three sensors: the pressure sensor (COPS) and two mass spectrometers (RTOF and DFMS). The double focusing mass spectrometer DFMS is optimized for mass resolution and consists of an ion source, a mass analyser and a detector package operated in analogue mode. The magnetic sector of the analyser provides the mass dispersion needed for use with the position-sensitive microchannel plate (MCP) detector. Ions that hit the MCP release electrons that are recorded digitally using a linear electron detector array with 512 pixels. Raw data for a given commanded mass are obtained as ADC counts as a function of pixel number. We have developed a computer-assisted approach to address the problem of calibrating such raw data. Mass calibration: Ion identification is based on their mass-over-charge (m/Z) ratio and requires an accurate correlation of pixel number and m/Z. The m/Z scale depends on the commanded mass and the magnetic field and can be described by an offset of the pixel associated with the commanded mass from the centre of the detector array and a scaling factor. Mass calibration is aided by the built-in gas calibration unit (GCU), which allows one to inject a known gas mixture into the instrument. In a first, fully automatic step of the mass calibration procedure, the calibration uses all GCU spectra and extracts information about the mass peak closest to the centre pixel, since those peaks can be identified unambiguously. This preliminary mass-calibration relation can then be applied to all spectra. Human-assisted identification of additional mass peaks further improves the mass calibration. Ion flux calibration: ADC counts per pixel are converted to ion counts per second using the overall gain, the individual pixel gain, and the total data accumulation time. DFMS can perform an internal scan to determine the pixel gain and related detector aging. The software automatically corrects for these effects to calibrate the fluxes. The COPS sensor can be used for an a posteriori calibration of the fluxes. Neutral gas number densities: Neutrals are ionized in the ion source before they are transferred to the mass analyser, but during this process fragmentation may occur. Our software allows one to identify which neutrals entered the instrument, given the ion fragments that are detected. First, multiple spectra with a limited mass range are combined to provide an overview of as many ion fragments as possible. We then exploit a fragmentation database to assist in figuring out the relation between entering species and recorded fragments. Finally, using experimentally determined sensitivities, gas number densities are obtained. The instrument characterisation (experimental determination of sensitivities, fragmentation patterns for the most common neutral species, etc.) has been conducted by the consortium using an instrument copy in the University of Bern test facilities during the cruise phase of the mission.

Assembly and Integration Process of the First High Density Detector Array for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Li, Yaqiong; Choi, Steve; Ho, Shuay-Pwu; Crowley, Kevin T.; Salatino, Maria; Simon, Sara M.; Staggs, Suzanne T.; Nati, Federico; Wollack, Edward J.

2016-01-01

The Advanced ACTPol (AdvACT) upgrade on the Atacama Cosmology Telescope (ACT) consists of multichroicTransition Edge Sensor (TES) detector arrays to measure the Cosmic Microwave Background (CMB) polarization anisotropies in multiple frequency bands. The first AdvACT detector array, sensitive to both 150 and 230 GHz, is fabricated on a 150 mm diameter wafer and read out with a completely different scheme compared to ACTPol. Approximately 2000 TES bolometers are packed into the wafer leading to both a much denser detector density and readout circuitry. The demonstration of the assembly and integration of the AdvACT arrays is important for the next generation CMB experiments, which will continue to increase the pixel number and density. We present the detailed assembly process of the first AdvACT detector array.

Recent X-ray hybrid CMOS detector developments and measurements

NASA Astrophysics Data System (ADS)

Hull, Samuel V.; Falcone, Abraham D.; Burrows, David N.; Wages, Mitchell; Chattopadhyay, Tanmoy; McQuaide, Maria; Bray, Evan; Kern, Matthew

2017-08-01

The Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors (TIS), have progressed their efforts to improve soft X-ray Hybrid CMOS detector (HCD) technology on multiple fronts. Having newly acquired a Teledyne cryogenic SIDECARTM ASIC for use with HxRG devices, measurements were performed with an H2RG HCD and the cooled SIDECARTM. We report new energy resolution and read noise measurements, which show a significant improvement over room temperature SIDECARTM operation. Further, in order to meet the demands of future high-throughput and high spatial resolution X-ray observatories, detectors with fast readout and small pixel sizes are being developed. We report on characteristics of new X-ray HCDs with 12.5 micron pitch that include in-pixel CDS circuitry and crosstalk-eliminating CTIA amplifiers. In addition, PSU and TIS are developing a new large-scale array Speedster-EXD device. The original 64 × 64 pixel Speedster-EXD prototype used comparators in each pixel to enable event driven readout with order of magnitude higher effective readout rates, which will now be implemented in a 550 × 550 pixel device. Finally, the detector lab is involved in a sounding rocket mission that is slated to fly in 2018 with an off-plane reflection grating array and an H2RG X-ray HCD. We report on the planned detector configuration for this mission, which will increase the NASA technology readiness level of X-ray HCDs to TRL 9.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2000-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

CMOS Amperometric ADC With High Sensitivity, Dynamic Range and Power Efficiency for Air Quality Monitoring.

PubMed

Li, Haitao; Boling, C Sam; Mason, Andrew J

2016-08-01

Airborne pollutants are a leading cause of illness and mortality globally. Electrochemical gas sensors show great promise for personal air quality monitoring to address this worldwide health crisis. However, implementing miniaturized arrays of such sensors demands high performance instrumentation circuits that simultaneously meet challenging power, area, sensitivity, noise and dynamic range goals. This paper presents a new multi-channel CMOS amperometric ADC featuring pixel-level architecture for gas sensor arrays. The circuit combines digital modulation of input currents and an incremental Σ∆ ADC to achieve wide dynamic range and high sensitivity with very high power efficiency and compact size. Fabricated in 0.5 [Formula: see text] CMOS, the circuit was measured to have 164 dB cross-scale dynamic range, 100 fA sensitivity while consuming only 241 [Formula: see text] and 0.157 [Formula: see text] active area per channel. Electrochemical experiments with liquid and gas targets demonstrate the circuit's real-time response to a wide range of analyte concentrations.

A smart sensor architecture based on emergent computation in an array of outer-totalistic cells

NASA Astrophysics Data System (ADS)

Dogaru, Radu; Dogaru, Ioana; Glesner, Manfred

2005-06-01

A novel smart-sensor architecture is proposed, capable to segment and recognize characters in a monochrome image. It is capable to provide a list of ASCII codes representing the recognized characters from the monochrome visual field. It can operate as a blind's aid or for industrial applications. A bio-inspired cellular model with simple linear neurons was found the best to perform the nontrivial task of cropping isolated compact objects such as handwritten digits or characters. By attaching a simple outer-totalistic cell to each pixel sensor, emergent computation in the resulting cellular automata lattice provides a straightforward and compact solution to the otherwise computationally intensive problem of character segmentation. A simple and robust recognition algorithm is built in a compact sequential controller accessing the array of cells so that the integrated device can provide directly a list of codes of the recognized characters. Preliminary simulation tests indicate good performance and robustness to various distortions of the visual field.

Human location estimation using thermopile array sensor

NASA Astrophysics Data System (ADS)

Parnin, S.; Rahman, M. M.

2017-11-01

Utilization of Thermopile sensor at an early stage of human detection is challenging as there are many things that produce thermal heat other than human such as electrical appliances and animals. Therefrom, an algorithm for early presence detection has been developed through the study of human body temperature behaviour with respect to the room temperature. The change in non-contact detected temperature of human varied according to body parts. In an indoor room, upper parts of human body change up to 3°C whereas lower part ranging from 0.58°C to 1.71°C. The average changes in temperature of human is used as a conditional set-point value in the program algorithm to detect human presence. The current position of human and its respective angle is gained when human is presence at certain pixels of Thermopile’s sensor array. Human position is estimated successfully as the developed sensory system is tested to the actuator of a stand fan.

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

NASA Astrophysics Data System (ADS)

Wang, Kai; Ou, Hai; Chen, Jun

2015-06-01

Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The "smart" pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

Spatial light modulator array with heat minimization and image enhancement features

DOEpatents

Jain, Kanti [Briarcliff Manor, NY; Sweatt, William C [Albuquerque, NM; Zemel, Marc [New Rochelle, NY

2007-01-30

An enhanced spatial light modulator (ESLM) array, a microelectronics patterning system and a projection display system using such an ESLM for heat-minimization and resolution enhancement during imaging, and the method for fabricating such an ESLM array. The ESLM array includes, in each individual pixel element, a small pixel mirror (reflective region) and a much larger pixel surround. Each pixel surround includes diffraction-grating regions and resolution-enhancement regions. During imaging, a selected pixel mirror reflects a selected-pixel beamlet into the capture angle of a projection lens, while the diffraction grating of the pixel surround redirects heat-producing unused radiation away from the projection lens. The resolution-enhancement regions of selected pixels provide phase shifts that increase effective modulation-transfer function in imaging. All of the non-selected pixel surrounds redirect all radiation energy away from the projection lens. All elements of the ESLM are fabricated by deposition, patterning, etching and other microelectronic process technologies.

Terahertz Array Receivers with Integrated Antennas

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Llombart, Nuria; Lee, Choonsup; Jung, Cecile; Lin, Robert; Cooper, Ken B.; Reck, Theodore; Siles, Jose; Schlecht, Erich; Peralta, Alessandro;

Performance assessment of a compressive sensing single-pixel imaging system

NASA Astrophysics Data System (ADS)

Du Bosq, Todd W.; Preece, Bradley L.

2017-04-01

Conventional sensors measure the light incident at each pixel in a focal plane array. Compressive sensing (CS) involves capturing a smaller number of unconventional measurements from the scene, and then using a companion process to recover the image. CS has the potential to acquire imagery with equivalent information content to a large format array while using smaller, cheaper, and lower bandwidth components. However, the benefits of CS do not come without compromise. The CS architecture chosen must effectively balance between physical considerations, reconstruction accuracy, and reconstruction speed to meet operational requirements. Performance modeling of CS imagers is challenging due to the complexity and nonlinearity of the system and reconstruction algorithm. To properly assess the value of such systems, it is necessary to fully characterize the image quality, including artifacts and sensitivity to noise. Imagery of a two-handheld object target set was collected using an shortwave infrared single-pixel CS camera for various ranges and number of processed measurements. Human perception experiments were performed to determine the identification performance within the trade space. The performance of the nonlinear CS camera was modeled by mapping the nonlinear degradations to an equivalent linear shift invariant model. Finally, the limitations of CS modeling techniques are discussed.

Adaptive scene-based correction algorithm for removal of residual fixed pattern noise in microgrid image data

NASA Astrophysics Data System (ADS)

Ratliff, Bradley M.; LeMaster, Daniel A.

2012-06-01

Pixel-to-pixel response nonuniformity is a common problem that affects nearly all focal plane array sensors. This results in a frame-to-frame fixed pattern noise (FPN) that causes an overall degradation in collected data. FPN is often compensated for through the use of blackbody calibration procedures; however, FPN is a particularly challenging problem because the detector responsivities drift relative to one another in time, requiring that the sensor be recalibrated periodically. The calibration process is obstructive to sensor operation and is therefore only performed at discrete intervals in time. Thus, any drift that occurs between calibrations (along with error in the calibration sources themselves) causes varying levels of residual calibration error to be present in the data at all times. Polarimetric microgrid sensors are particularly sensitive to FPN due to the spatial differencing involved in estimating the Stokes vector images. While many techniques exist in the literature to estimate FPN for conventional video sensors, few have been proposed to address the problem in microgrid imaging sensors. Here we present a scene-based nonuniformity correction technique for microgrid sensors that is able to reduce residual fixed pattern noise while preserving radiometry under a wide range of conditions. The algorithm requires a low number of temporal data samples to estimate the spatial nonuniformity and is computationally efficient. We demonstrate the algorithm's performance using real data from the AFRL PIRATE and University of Arizona LWIR microgrid sensors.

Preliminary Assessment of Microwave Readout Multiplexing Factor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Croce, Mark Philip; Koehler, Katrina Elizabeth; Rabin, Michael W.

2017-01-23

Ultra-high resolution microcalorimeter gamma spectroscopy is a new non-destructive assay technology for measurement of plutonium isotopic composition, with the potential to reduce total measurement uncertainty to a level competitive with destructive analysis methods [1-4]. Achieving this level of performance in practical applications requires not only the energy resolution now routinely achieved with transition-edge sensor microcalorimeter arrays (an order of magnitude better than for germanium detectors) but also high throughput. Microcalorimeter gamma spectrometers have not yet achieved detection efficiency and count rate capability that is comparable to germanium detectors, largely because of limits from existing readout technology. Microcalorimeter detectors must bemore » operated at low temperature to achieve their exceptional energy resolution. Although the typical 100 mK operating temperatures can be achieved with reliable, cryogen-free systems, the cryogenic complexity and heat load from individual readout channels for large sensor arrays is prohibitive. Multiplexing is required for practical systems. The most mature multiplexing technology at present is time-division multiplexing (TDM) [3, 5-6]. In TDM, the sensor outputs are switched by applying bias current to one SQUID amplifier at a time. Transition-edge sensor (TES) microcalorimeter arrays as large as 256 pixels have been developed for X-ray and gamma-ray spectroscopy using TDM technology. Due to bandwidth limits and noise scaling, TDM is limited to a maximum multiplexing factor of approximately 32-40 sensors on one readout line [8]. Increasing the size of microcalorimeter arrays above the kilopixel scale, required to match the throughput of germanium detectors, requires the development of a new readout technology with a much higher multiplexing factor.« less

Uncooled tunneling infrared sensor

NASA Technical Reports Server (NTRS)

Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Rockstad, Howard K. (Inventor); Reynolds, Joseph K. (Inventor)

1994-01-01

An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane which would otherwise change deflection depending upon incident infrared radiation. The resulting infrared sensor will meet or exceed the performance of all other broadband, uncooled, infrared sensors and can be miniaturized to pixel dimensions smaller than 100 .mu.m. The technology is readily implemented as a small-format linear array suitable for commercial and spacecraft applications.

A nanofiber based artificial electronic skin with high pressure sensitivity and 3D conformability

NASA Astrophysics Data System (ADS)

Zhong, Weibin; Liu, Qiongzhen; Wu, Yongzhi; Wang, Yuedan; Qing, Xing; Li, Mufang; Liu, Ke; Wang, Wenwen; Wang, Dong

2016-06-01

Pressure sensors with 3D conformability are highly desirable components for artificial electronic skin or e-textiles that can mimic natural skin, especially for application in real-time monitoring of human physiological signals. Here, a nanofiber based electronic skin with ultra-high pressure sensitivity and 3D conformability is designed and built by interlocking two elastic patterned nanofibrous membranes. The patterned membrane is facilely prepared by casting conductive nanofiber ink into a silicon mould to form an array of semi-spheroid-like protuberances. The protuberances composed of intertwined elastic POE nanofibers and PPy@PVA-co-PE nanofibers afford a tunable effective elastic modulus that is capable of capturing varied strains and stresses, thereby contributing to a high sensitivity for pressure sensing. This electronic skin-like sensor demonstrates an ultra-high sensitivity (1.24 kPa-1) below 150 Pa with a detection limit as low as about 1.3 Pa. The pixelated sensor array and a RGB-LED light are then assembled into a circuit and show a feasibility for visual detection of spatial pressure. Furthermore, a nanofiber based proof-of-concept wireless pressure sensor with a bluetooth module as a signal transmitter is proposed and has demonstrated great promise for wireless monitoring of human physiological signals, indicating a potential for large scale wearable electronic devices or e-skin.Pressure sensors with 3D conformability are highly desirable components for artificial electronic skin or e-textiles that can mimic natural skin, especially for application in real-time monitoring of human physiological signals. Here, a nanofiber based electronic skin with ultra-high pressure sensitivity and 3D conformability is designed and built by interlocking two elastic patterned nanofibrous membranes. The patterned membrane is facilely prepared by casting conductive nanofiber ink into a silicon mould to form an array of semi-spheroid-like protuberances. The protuberances composed of intertwined elastic POE nanofibers and PPy@PVA-co-PE nanofibers afford a tunable effective elastic modulus that is capable of capturing varied strains and stresses, thereby contributing to a high sensitivity for pressure sensing. This electronic skin-like sensor demonstrates an ultra-high sensitivity (1.24 kPa-1) below 150 Pa with a detection limit as low as about 1.3 Pa. The pixelated sensor array and a RGB-LED light are then assembled into a circuit and show a feasibility for visual detection of spatial pressure. Furthermore, a nanofiber based proof-of-concept wireless pressure sensor with a bluetooth module as a signal transmitter is proposed and has demonstrated great promise for wireless monitoring of human physiological signals, indicating a potential for large scale wearable electronic devices or e-skin. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02678h

IR CMOS: near infrared enhanced digital imaging (Presentation Recording)

NASA Astrophysics Data System (ADS)

Pralle, Martin U.; Carey, James E.; Joy, Thomas; Vineis, Chris J.; Palsule, Chintamani

2015-08-01

SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx's proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon's native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed. Demonstrated performance characteristics: Pixel size : 5.6 and 10 um Array size: 720P/1.3Mpix Frame rate: 60 Hz Read noise: 2 ele/pixel Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm) Daytime imaging: color (Bayer pattern) Nighttime imaging: moonless starlight conditions 1064nm laser imaging: daytime imaging out to 2Km

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Lipson, Jerold

2012-01-01

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Yang, Guang; Ortiz, Monico; Wrigley, Christopher; Hancock, Bruce; Cunningham, Thomas

2000-01-01

Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

Visible and shortwave infrared focal planes for remote sensing instruments

NASA Astrophysics Data System (ADS)

Tower, J. R.; McCarthy, B. M.; Pellon, L. E.; Strong, R. T.; Elabd, H.

1984-01-01

The development of solid-state sensor technology for multispectral linear array (MLA) instruments is described. A buttable four-spectral-band linear-format CCD and a buttable two-spectral band linear-format short-wave IR CCD have been designed, and first samples have been demonstrated. In addition, first-sample four-band interference filters have been fabricated, and hybrid packaging technology is being developed. Based on this development work, the design and construction of focal planes for a Shuttle sortie MLA instrument have begun. This work involves a visible and near-IR focal plane with 2048 pixels x 4 spectral bands and a short-wave IR focal plane with 1024 pixels x 2 spectral bands.

SPAD array based TOF SoC design for unmanned vehicle

NASA Astrophysics Data System (ADS)

Pan, An; Xu, Yuan; Xie, Gang; Huang, Zhiyu; Zheng, Yanghao; Shi, Weiwei

2018-03-01

As for the requirement of unmanned-vehicle mobile Lidar system, this paper presents a SoC design based on pulsed TOF depth image sensor. This SoC has a detection range of 300m and detecting resolution of 1.5cm. Pixels are made of SPAD. Meanwhile, SoC adopts a structure of multi-pixel sharing TDC, which significantly reduces chip area and improve the fill factor of light-sensing surface area. SoC integrates a TCSPC module to achieve the functionality of receiving each photon, measuring photon flight time and processing depth information in one chip. The SOC is designed in the SMIC 0.13μm CIS CMOS technology

Process techniques of charge transfer time reduction for high speed CMOS image sensors

NASA Astrophysics Data System (ADS)

Zhongxiang, Cao; Quanliang, Li; Ye, Han; Qi, Qin; Peng, Feng; Liyuan, Liu; Nanjian, Wu

2014-11-01

This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode (PPD) and the voltage difference between the PPD and the floating diffusion (FD) node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 × 64 pixels was designed and implemented in the 0.18 μm CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques.

Dynamically re-configurable CMOS imagers for an active vision system

NASA Technical Reports Server (NTRS)

Yang, Guang (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

A vision system is disclosed. The system includes a pixel array, at least one multi-resolution window operation circuit, and a pixel averaging circuit. The pixel array has an array of pixels configured to receive light signals from an image having at least one tracking target. The multi-resolution window operation circuits are configured to process the image. Each of the multi-resolution window operation circuits processes each tracking target within a particular multi-resolution window. The pixel averaging circuit is configured to sample and average pixels within the particular multi-resolution window.

High density pixel array and laser micro-milling method for fabricating array

NASA Technical Reports Server (NTRS)

McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)

2003-01-01

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

I-ImaS: intelligent imaging sensors

NASA Astrophysics Data System (ADS)

Griffiths, J.; Royle, G.; Esbrand, C.; Hall, G.; Turchetta, R.; Speller, R.

2010-08-01

Conventional x-radiography uniformly irradiates the relevant region of the patient. Across that region, however, there is likely to be significant variation in both the thickness and pathological composition of the tissues present, which means that the x-ray exposure conditions selected, and consequently the image quality achieved, are a compromise. The I-ImaS concept eliminates this compromise by intelligently scanning the patient to identify the important diagnostic features, which are then used to adaptively control the x-ray exposure conditions at each point in the patient. In this way optimal image quality is achieved throughout the region of interest whilst maintaining or reducing the dose. An I-ImaS system has been built under an EU Framework 6 project and has undergone pre-clinical testing. The system is based upon two rows of sensors controlled via an FPGA based DAQ board. Each row consists of a 160 mm × 1 mm linear array of ten scintillator coated 3T CMOS APS devices with 32 μm pixels and a readable array of 520 × 40 pixels. The first sensor row scans the patient using a fraction of the total radiation dose to produce a preview image, which is then interrogated to identify the optimal exposure conditions at each point in the image. A signal is then sent to control a beam filter mechanism to appropriately moderate x-ray beam intensity at the patient as the second row of sensors follows behind. Tests performed on breast tissue sections found that the contrast-to-noise ratio in over 70% of the images was increased by an average of 15% at an average dose reduction of 9%. The same technology is currently also being applied to baggage scanning for airport security.

Carrier Plus: A sensor payload for Living With a Star Space Environment Testbed (LWS/SET)

NASA Technical Reports Server (NTRS)

Marshall, Cheryl J.; Moss, Steven; Howard, Regan; LaBel, Kenneth A.; Grycewicz, Tom; Barth, Janet L.; Brewer, Dana

2003-01-01

The Defense Threat Reduction Agency (DTR4) and National Aeronautics and Space Administration (NASA) Goddard Space Flight Center are collaborating to develop the Carrier Plus sensor experiment platform as a capability of the Space Environments Testbed (SET). The Space Environment Testbed (SET) provides flight opportunities for technology experiments as part of NASA's Living With a Star (LWS) program. The Carrier Plus will provide new capability to characterize sensor technologies such as state-of-the-art visible focal plane arrays (FPAs) in a natural space radiation environment. The technical objectives include on-orbit validation of recently developed FPA technologies and performance prediction methodologies, as well as characterization of the FPA radiation response to total ionizing dose damage, displacement damage and transients. It is expected that the sensor experiment will carry 4-6 FPAs and associated radiation correlative environment monitors (CEMs) for a 2006-2007 launch. Sensor technology candidates may include n- and p-charge coupled devices (CCDs), active pixel sensors (APS), and hybrid CMOS arrays. The presentation will describe the Carrier Plus goals and objectives, as well as provide details about the architecture and design. More information on the LWS program can be found at http://lws.gsfc.nasa.gov/. Business announcements for LWS/SET and program briefings are posted at http://lws-set.gsfc.nasa.gov

High density pixel array

NASA Technical Reports Server (NTRS)

McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)

2004-01-01

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

Antenna-coupled Superconducting Bolometers for Observations of the Cosmic Microwave Background Polarization

NASA Astrophysics Data System (ADS)

Myers, Michael James

We describe the development of a novel millimeter-wave cryogenic detector. The device integrates a planar antenna, superconducting transmission line, bandpass filter, and bolometer onto a single silicon wafer. The bolometer uses a superconducting Transition-Edge Sensor (TES) thermistor, which provides substantial advantages over conventional semiconductor bolometers. The detector chip is fabricated using standard micro-fabrication techniques. This highly-integrated detector architecture is particularly well-suited for use in the de- velopment of polarization-sensitive cryogenic receivers with thousands of pixels. Such receivers are needed to meet the sensitivity requirements of next-generation cosmic microwave background polarization experiments. The design, fabrication, and testing of prototype array pixels are described. Preliminary considerations for a full array design are also discussed. A set of on-chip millimeter-wave test structures were developed to help understand the performance of our millimeter-wave microstrip circuits. These test structures produce a calibrated transmission measurement for an arbitrary two-port circuit using optical techniques, rather than a network analyzer. Some results of fabricated test structures are presented.

Innovative monolithic detector for tri-spectral (THz, IR, Vis) imaging

NASA Astrophysics Data System (ADS)

Pocas, S.; Perenzoni, M.; Massari, N.; Simoens, F.; Meilhan, J.; Rabaud, W.; Martin, S.; Delplanque, B.; Imperinetti, P.; Goudon, V.; Vialle, C.; Arnaud, A.

2012-10-01

Fusion of multispectral images has been explored for many years for security and used in a number of commercial products. CEA-Leti and FBK have developed an innovative sensor technology that gathers monolithically on a unique focal plane arrays, pixels sensitive to radiation in three spectral ranges that are terahertz (THz), infrared (IR) and visible. This technology benefits of many assets for volume market: compactness, full CMOS compatibility on 200mm wafers, advanced functions of the CMOS read-out integrated circuit (ROIC), and operation at room temperature. The ROIC houses visible APS diodes while IR and THz detections are carried out by microbolometers collectively processed above the CMOS substrate. Standard IR bolometric microbridges (160x160 pixels) are surrounding antenna-coupled bolometers (32X32 pixels) built on a resonant cavity customized to THz sensing. This paper presents the different technological challenges achieved in this development and first electrical and sensitivity experimental tests.

In Situ Time Constant and Optical Efficiency Measurements of TRUCE Pixels in the Atacama B-Mode Search

NASA Astrophysics Data System (ADS)

Simon, S. M.; Appel, J. W.; Cho, H. M.; Essinger-Hileman, T.; Irwin, K. D.; Kusaka, A.; Niemack, M. D.; Nolta, M. R.; Page, L. A.; Parker, L. P.; Raghunathan, S.; Sievers, J. L.; Staggs, S. T.; Visnjic, K.

2014-09-01

The Atacama B-mode Search (ABS) instrument, which began observation in February of 2012, is a crossed-Dragone telescope located at an elevation of 5,100 m in the Atacama Desert in Chile. The primary scientific goal of ABS is to measure the B-mode polarization spectrum of the Cosmic Microwave Background from multipole moments of about 50 to 500 (angular scales from to ), a range that includes the primordial B-mode peak from inflationary gravitational waves. The ABS focal plane array consists of 240 pixels designed for observation at 145 GHz by the TRUCE collaboration. Each pixel has its own individual, single-moded feedhorn and contains two transition-edge sensor bolometers coupled to orthogonal polarizations that are read out using time domain multiplexing. We will report on the current status of ABS and discuss the time constants and optical efficiencies of the TRUCE detectors in the field.

Detection systems for mass spectrometry imaging: a perspective on novel developments with a focus on active pixel detectors.

PubMed

Jungmann, Julia H; Heeren, Ron M A

2013-01-15

Instrumental developments for imaging and individual particle detection for biomolecular mass spectrometry (imaging) and fundamental atomic and molecular physics studies are reviewed. Ion-counting detectors, array detection systems and high mass detectors for mass spectrometry (imaging) are treated. State-of-the-art detection systems for multi-dimensional ion, electron and photon detection are highlighted. Their application and performance in three different imaging modes--integrated, selected and spectral image detection--are described. Electro-optical and microchannel-plate-based systems are contrasted. The analytical capabilities of solid-state pixel detectors--both charge coupled device (CCD) and complementary metal oxide semiconductor (CMOS) chips--are introduced. The Medipix/Timepix detector family is described as an example of a CMOS hybrid active pixel sensor. Alternative imaging methods for particle detection and their potential for future applications are investigated. Copyright © 2012 John Wiley & Sons, Ltd.

A Comparison of Lightning Flashes as Observed by the Lightning Imaging Sensor and the North Alabama Lightning Mapping Array

NASA Technical Reports Server (NTRS)

Bateman, M. G.; Mach, D. M.; McCaul, M. G.; Bailey, J. C.; Christian, H. J.

2008-01-01

The Lightning Imaging Sensor (LIS) aboard the TRMM satellite has been collecting optical lightning data since November 1997. A Lightning Mapping Array (LMA) that senses VHF impulses from lightning was installed in North Alabama in the Fall of 2001. A dataset has been compiled to compare data from both instruments for all times when the LIS was passing over the domain of our LMA. We have algorithms for both instruments to group pixels or point sources into lightning flashes. This study presents the comparison statistics of the flash data output (flash duration, size, and amplitude) from both algorithms. We will present the results of this comparison study and show "point-level" data to explain the differences. AS we head closer to realizing a Global Lightning Mapper (GLM) on GOES-R, better understanding and ground truth of each of these instruments and their respective flash algorithms is needed.

NbN A/D Conversion of IR Focal Plane Sensor Signal at 10 K

NASA Technical Reports Server (NTRS)

Eaton, L.; Durand, D.; Sandell, R.; Spargo, J.; Krabach, T.

1994-01-01

We are implementing a 12 bit SFQ counting ADC with parallel-to-serial readout using our established 10 K NbN capability. This circuit provides a key element of the analog signal processor (ASP) used in large infrared focal plane arrays. The circuit processes the signal data stream from a Si:As BIB detector array. A 10 mega samples per second (MSPS) pixel data stream flows from the chip at a 120 megabit bit rate in a format that is compatible with other superconductive time dependent processor (TDP) circuits being developed. We will discuss our planned ASP demonstration, the circuit design, and test results.

A new detector for mass spectrometry: direct detection of low energy ions using a multi-pixel photon counter.

PubMed

Wilman, Edward S; Gardiner, Sara H; Nomerotski, Andrei; Turchetta, Renato; Brouard, Mark; Vallance, Claire

2012-01-01

A new type of ion detector for mass spectrometry and general detection of low energy ions is presented. The detector consists of a scintillator optically coupled to a single-photon avalanche photodiode (SPAD) array. A prototype sensor has been constructed from a LYSO (Lu(1.8)Y(0.2)SiO(5)(Ce)) scintillator crystal coupled to a commercial SPAD array detector. As proof of concept, the detector is used to record the time-of-flight mass spectra of butanone and carbon disulphide, and the dependence of detection sensitivity on the ion kinetic energy is characterised.

Detector Arrays for the James Webb Space Telescope Near-Infrared Spectrograph

NASA Technical Reports Server (NTRS)

Rauscher, Bernard J.; Alexander, David; Brambora, Clifford K.; Derro, Rebecca; Engler, Chuck; Fox, Ori; Garrison, Matthew B.; Henegar, Greg; Hill, robert J.; Johnson, Thomas;

Nanowire active-matrix circuitry for low-voltage macroscale artificial skin.

PubMed

Takei, Kuniharu; Takahashi, Toshitake; Ho, Johnny C; Ko, Hyunhyub; Gillies, Andrew G; Leu, Paul W; Fearing, Ronald S; Javey, Ali

2010-10-01

Large-scale integration of high-performance electronic components on mechanically flexible substrates may enable new applications in electronics, sensing and energy. Over the past several years, tremendous progress in the printing and transfer of single-crystalline, inorganic micro- and nanostructures on plastic substrates has been achieved through various process schemes. For instance, contact printing of parallel arrays of semiconductor nanowires (NWs) has been explored as a versatile route to enable fabrication of high-performance, bendable transistors and sensors. However, truly macroscale integration of ordered NW circuitry has not yet been demonstrated, with the largest-scale active systems being of the order of 1 cm(2) (refs 11,15). This limitation is in part due to assembly- and processing-related obstacles, although larger-scale integration has been demonstrated for randomly oriented NWs (ref. 16). Driven by this challenge, here we demonstrate macroscale (7×7 cm(2)) integration of parallel NW arrays as the active-matrix backplane of a flexible pressure-sensor array (18×19 pixels). The integrated sensor array effectively functions as an artificial electronic skin, capable of monitoring applied pressure profiles with high spatial resolution. The active-matrix circuitry operates at a low operating voltage of less than 5 V and exhibits superb mechanical robustness and reliability, without performance degradation on bending to small radii of curvature (2.5 mm) for over 2,000 bending cycles. This work presents the largest integration of ordered NW-array active components, and demonstrates a model platform for future integration of nanomaterials for practical applications.

Long-wave infrared profile feature extractor (PFx) sensor

NASA Astrophysics Data System (ADS)

Sartain, Ronald B.; Aliberti, Keith; Alexander, Troy; Chiu, David

2009-05-01

The Long Wave Infrared (LWIR) Profile Feature Extractor (PFx) sensor has evolved from the initial profiling sensor that was developed by the University of Memphis (Near IR) and the Army Research Laboratory (visible). This paper presents the initial signatures of the LWIR PFx for human with and without backpacks, human with animal (dog), and a number of other animals. The current version of the LWIR PFx sensor is a diverging optical tripwire sensor. The LWIR PFx signatures are compared to the signatures of the Profile Sensor in the visible and Near IR spectral regions. The LWIR PFx signatures were collected with two different un-cooled micro bolometer focal plane array cameras, where the individual pixels were used as stand alone detectors (a non imaging sensor). This approach results in a completely passive, much lower bandwidth, much longer battery life, low weight, small volume sensor that provides sufficient information to classify objects into human Vs non human categories with a 98.5% accuracy.

Astronomical Polarimetry with the RIT Polarization Imaging Camera

NASA Astrophysics Data System (ADS)

Vorobiev, Dmitry V.; Ninkov, Zoran; Brock, Neal

2018-06-01

In the last decade, imaging polarimeters based on micropolarizer arrays have been developed for use in terrestrial remote sensing and metrology applications. Micropolarizer-based sensors are dramatically smaller and more mechanically robust than other polarimeters with similar spectral response and snapshot capability. To determine the suitability of these new polarimeters for astronomical applications, we developed the RIT Polarization Imaging Camera to investigate the performance of these devices, with a special attention to the low signal-to-noise regime. We characterized the device performance in the lab, by determining the relative throughput, efficiency, and orientation of every pixel, as a function of wavelength. Using the resulting pixel response model, we developed demodulation procedures for aperture photometry and imaging polarimetry observing modes. We found that, using the current calibration, RITPIC is capable of detecting polarization signals as small as ∼0.3%. The relative ease of data collection, calibration, and analysis provided by these sensors suggest than they may become an important tool for a number of astronomical targets.

Photodiode area effect on performance of X-ray CMOS active pixel sensors

NASA Astrophysics Data System (ADS)

Kim, M. S.; Kim, Y.; Kim, G.; Lim, K. T.; Cho, G.; Kim, D.

2018-02-01

Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 μm2, the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 μm is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 μm or less.

The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M; Choi, K.; Reuter, D.; Sundaram, M.; Jhabvala, C; La, Anh; Waczynski, Augustyn; Bundas, Jason

2010-01-01

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8[mu]m and 12.0[mu]m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.

The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Reuter, D.; Choi, K.; Sundaram, M.; Jhabvala, C.; La, A.; Waczynski, A.; Bundas, J.

2011-01-01

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8 m and 12.0 m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.

Synthetic aperture radar images with composite azimuth resolution

DOEpatents

Bielek, Timothy P; Bickel, Douglas L

2015-03-31

A synthetic aperture radar (SAR) image is produced by using all phase histories of a set of phase histories to produce a first pixel array having a first azimuth resolution, and using less than all phase histories of the set to produce a second pixel array having a second azimuth resolution that is coarser than the first azimuth resolution. The first and second pixel arrays are combined to produce a third pixel array defining a desired SAR image that shows distinct shadows of moving objects while preserving detail in stationary background clutter.

Development of Fast, Background-Limited Transition-Edge Sensors for the Background-Limited Infrared/Sub-Millimetre Spectrograph (BLISS) for SPICA

NASA Technical Reports Server (NTRS)

Beyer, Andrew D.; Runyan, M. C.; Kenyon, M.; Echternach, P. M.; Chui, T.; Bumble, B.; Bradford, C. M.; Holmes, W. A.; Bock, J. J.

2012-01-01

We report experimental progress toward demonstrating background-limited arrays of membrane-isolated transition-edge sensors (TESs) for the Background Limited Infrared/Sub-mm Spectrograph (BLISS). BLISS is a space-borne instrument with grating spectrometers for wavelengths lambda = 35-435 microns and with R = lambda/(delta)lambda approx. 500. The goals for BLISS TESs are: noise equivalent power (NEP) = 5x10(exp -20) W/Hz(1/2) and response time t<30ms. We expect background-limited performance from bilayers TESs with T(sub c)=65mK and G=15fW/K. However, such TESs cannot be operated at 50mK unless stray power on the devices, or dark power PD, is less than 200aW. We describe criteria for measuring P? that requires accurate knowledge of TC. Ultimately, we fabricated superconducting thermistors from Ir (T(sub c) > or = 135mK) and Mo/Cu proximitized bilayers, where T(sub c) is the thermistor transition temperature. We measured the Ir TES arrays in our 50mK adiabatic demagnetization refrigerator test system, which can measure up to eight 1x32 arrays simultaneously using a time-division multiplexer, as well as our single-pixel test system which can measure down to 15mK. In our previous Ir array measurements our best reported performance was NEP=2.5x10(exp -19) W/Hz(1/2) and tapprox.5ms for straight-beam TESs. In fact, we expected NEPapprox.1.5x10(exp -19)W/Hz(1/2) for meander beam TESs, but did not achieve this previously due to 1/f noise. Here, we detail improvements toward measuring the expected NEP and demonstrate NEP=(1.3+0.2)x10(exp -19)W/Hz(1/2) in our single-pixel test system and NEP=(1.6+0.3)x10(exp -19)W/Hz(1/2) in our array test system.

Imaging through turbulence using a plenoptic sensor

NASA Astrophysics Data System (ADS)

Wu, Chensheng; Ko, Jonathan; Davis, Christopher C.

2015-09-01

Atmospheric turbulence can significantly affect imaging through paths near the ground. Atmospheric turbulence is generally treated as a time varying inhomogeneity of the refractive index of the air, which disrupts the propagation of optical signals from the object to the viewer. Under circumstances of deep or strong turbulence, the object is hard to recognize through direct imaging. Conventional imaging methods can't handle those problems efficiently. The required time for lucky imaging can be increased significantly and the image processing approaches require much more complex and iterative de-blurring algorithms. We propose an alternative approach using a plenoptic sensor to resample and analyze the image distortions. The plenoptic sensor uses a shared objective lens and a microlens array to form a mini Keplerian telescope array. Therefore, the image obtained by a conventional method will be separated into an array of images that contain multiple copies of the object's image and less correlated turbulence disturbances. Then a highdimensional lucky imaging algorithm can be performed based on the collected video on the plenoptic sensor. The corresponding algorithm will select the most stable pixels from various image cells and reconstruct the object's image as if there is only weak turbulence effect. Then, by comparing the reconstructed image with the recorded images in each MLA cell, the difference can be regarded as the turbulence effects. As a result, the retrieval of the object's image and extraction of turbulence effect can be performed simultaneously.

Optical modeling of waveguide coupled TES detectors towards the SAFARI instrument for SPICA

NASA Astrophysics Data System (ADS)

Trappe, N.; Bracken, C.; Doherty, S.; Gao, J. R.; Glowacka, D.; Goldie, D.; Griffin, D.; Hijmering, R.; Jackson, B.; Khosropanah, P.; Mauskopf, P.; Morozov, D.; Murphy, A.; O'Sullivan, C.; Ridder, M.; Withington, S.

2012-09-01

The next generation of space missions targeting far-infrared wavelengths will require large-format arrays of extremely sensitive detectors. The development of Transition Edge Sensor (TES) array technology is being developed for future Far-Infrared (FIR) space applications such as the SAFARI instrument for SPICA where low-noise and high sensitivity is required to achieve ambitious science goals. In this paper we describe a modal analysis of multi-moded horn antennas feeding integrating cavities housing TES detectors with superconducting film absorbers. In high sensitivity TES detector technology the ability to control the electromagnetic and thermo-mechanical environment of the detector is critical. Simulating and understanding optical behaviour of such detectors at far IR wavelengths is difficult and requires development of existing analysis tools. The proposed modal approach offers a computationally efficient technique to describe the partial coherent response of the full pixel in terms of optical efficiency and power leakage between pixels. Initial wok carried out as part of an ESA technical research project on optical analysis is described and a prototype SAFARI pixel design is analyzed where the optical coupling between the incoming field and the pixel containing horn, cavity with an air gap, and thin absorber layer are all included in the model to allow a comprehensive optical characterization. The modal approach described is based on the mode matching technique where the horn and cavity are described in the traditional way while a technique to include the absorber was developed. Radiation leakage between pixels is also included making this a powerful analysis tool.

Dead pixel replacement in LWIR microgrid polarimeters.

PubMed

Ratliff, Bradley M; Tyo, J Scott; Boger, James K; Black, Wiley T; Bowers, David L; Fetrow, Matthew P

2007-06-11

LWIR imaging arrays are often affected by nonresponsive pixels, or "dead pixels." These dead pixels can severely degrade the quality of imagery and often have to be replaced before subsequent image processing and display of the imagery data. For LWIR arrays that are integrated with arrays of micropolarizers, the problem of dead pixels is amplified. Conventional dead pixel replacement (DPR) strategies cannot be employed since neighboring pixels are of different polarizations. In this paper we present two DPR schemes. The first is a modified nearest-neighbor replacement method. The second is a method based on redundancy in the polarization measurements.We find that the redundancy-based DPR scheme provides an order-of-magnitude better performance for typical LWIR polarimetric data.

X-ray imaging performance of scintillator-filled silicon pore arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simon, Matthias; Engel, Klaus Juergen; Menser, Bernd

2008-03-15

The need for fine detail visibility in various applications such as dental imaging, mammography, but also neurology and cardiology, is the driver for intensive efforts in the development of new x-ray detectors. The spatial resolution of current scintillator layers is limited by optical diffusion. This limitation can be overcome by a pixelation, which prevents optical photons from crossing the interface between two neighboring pixels. In this work, an array of pores was etched in a silicon wafer with a pixel pitch of 50 {mu}m. A very high aspect ratio was achieved with wall thicknesses of 4-7 {mu}m and pore depthsmore » of about 400 {mu}m. Subsequently, the pores were filled with Tl-doped cesium iodide (CsI:Tl) as a scintillator in a special process, which includes powder melting and solidification of the CsI. From the sample geometry and x-ray absorption measurement the pore fill grade was determined to be 75%. The scintillator-filled samples have a circular active area of 16 mm diameter. They are coupled with an optical sensor binned to the same pixel pitch in order to measure the x-ray imaging performance. The x-ray sensitivity, i.e., the light output per absorbed x-ray dose, is found to be only 2.5%-4.5% of a commercial CsI-layer of similar thickness, thus very low. The efficiency of the pores to transport the generated light to the photodiode is estimated to be in the best case 6.5%. The modulation transfer function is 40% at 4 lp/mm and 10%-20% at 8 lp/mm. It is limited most likely by the optical gap between scintillator and sensor and by K-escape quanta. The detective quantum efficiency (DQE) is determined at different beam qualities and dose settings. The maximum DQE(0) is 0.28, while the x-ray absorption with the given thickness and fill factor is 0.57. High Swank noise is suspected to be the reason, mainly caused by optical scatter inside the CsI-filled pores. The results are compared to Monte Carlo simulations of the photon transport inside the pore array structure. In addition, some x-ray images of technical and anatomical phantoms are shown. This work shows that scintillator-filled pore arrays can provide x-ray imaging with high spatial resolution, but are not suitable in their current state for most of the applications in medical imaging, where increasing the x-ray doses cannot be tolerated.« less

Proton irradiation of the CIS115 for the JUICE mission

NASA Astrophysics Data System (ADS)

Soman, M. R.; Allanwood, E. A. H.; Holland, A. D.; Winstone, G. P.; Gow, J. P. D.; Stefanov, K.; Leese, M.

2015-09-01

The CIS115 is one of the latest CMOS Imaging Sensors designed by e2v technologies, with 1504x2000 pixels on a 7 μm pitch. Each pixel in the array is a pinned photodiode with a 4T architecture, achieving an average dark current of 22 electrons pixel-1 s-1 at 21°C measured in a front-faced device. The sensor aims for high optical sensitivity by utilising e2v's back-thinning and processing capabilities, providing a sensitive silicon thickness approximately 9 μm to 12 μm thick with a tuned anti-reflective coating. The sensor operates in a rolling shutter mode incorporating reset level subtraction resulting in a mean pixel readout noise of 4.25 electrons rms. The full well has been measured to be 34000 electrons in a previous study, resulting in a dynamic range of up to 8000. These performance characteristics have led to the CIS115 being chosen for JANUS, the high-resolution and wide-angle optical camera on the JUpiter ICy moon Explorer (JUICE). The three year science phase of JUICE is in the harsh radiation environment of the Jovian magnetosphere, primarily studying Jupiter and its icy moons. Analysis of the expected radiation environment and shielding levels from the spacecraft and instrument design predict the End Of Life (EOL) displacement and ionising damage for the CIS115 to be equivalent to 1010 10 MeV protons cm-2 and 100 krad(Si) respectively. Dark current and image lag characterisation results following initial proton irradiations are presented, detailing the initial phase of space qualification of the CIS115. Results are compared to the pre-irradiation performance and the instrument specifications and further qualification plans are outlined.

Graphical user interface for a dual-module EMCCD x-ray detector array

NASA Astrophysics Data System (ADS)

Wang, Weiyuan; Ionita, Ciprian; Kuhls-Gilcrist, Andrew; Huang, Ying; Qu, Bin; Gupta, Sandesh K.; Bednarek, Daniel R.; Rudin, Stephen

2011-03-01

A new Graphical User Interface (GUI) was developed using Laboratory Virtual Instrumentation Engineering Workbench (LabVIEW) for a high-resolution, high-sensitivity Solid State X-ray Image Intensifier (SSXII), which is a new x-ray detector for radiographic and fluoroscopic imaging, consisting of an array of Electron-Multiplying CCDs (EMCCDs) each having a variable on-chip electron-multiplication gain of up to 2000x to reduce the effect of readout noise. To enlarge the field-of-view (FOV), each EMCCD sensor is coupled to an x-ray phosphor through a fiberoptic taper. Two EMCCD camera modules are used in our prototype to form a computer-controlled array; however, larger arrays are under development. The new GUI provides patient registration, EMCCD module control, image acquisition, and patient image review. Images from the array are stitched into a 2kx1k pixel image that can be acquired and saved at a rate of 17 Hz (faster with pixel binning). When reviewing the patient's data, the operator can select images from the patient's directory tree listed by the GUI and cycle through the images using a slider bar. Commonly used camera parameters including exposure time, trigger mode, and individual EMCCD gain can be easily adjusted using the GUI. The GUI is designed to accommodate expansion of the EMCCD array to even larger FOVs with more modules. The high-resolution, high-sensitivity EMCCD modular-array SSXII imager with the new user-friendly GUI should enable angiographers and interventionalists to visualize smaller vessels and endovascular devices, helping them to make more accurate diagnoses and to perform more precise image-guided interventions.

A Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor.

PubMed

Yu, Changwei; Nie, Kaiming; Xu, Jiangtao; Gao, Jing

2016-09-23

In this paper, an accumulation technique suitable for digital domain CMOS time delay integration (TDI) image sensors is proposed to reduce power consumption without degrading the rate of imaging. In terms of the slight variations of quantization codes among different pixel exposures towards the same object, the pixel array is divided into two groups: one is for coarse quantization of high bits only, and the other one is for fine quantization of low bits. Then, the complete quantization codes are composed of both results from the coarse-and-fine quantization. The equivalent operation comparably reduces the total required bit numbers of the quantization. In the 0.18 µm CMOS process, two versions of 16-stage digital domain CMOS TDI image sensor chains based on a 10-bit successive approximate register (SAR) analog-to-digital converter (ADC), with and without the proposed technique, are designed. The simulation results show that the average power consumption of slices of the two versions are 6 . 47 × 10 - 8 J/line and 7 . 4 × 10 - 8 J/line, respectively. Meanwhile, the linearity of the two versions are 99.74% and 99.99%, respectively.

Kilopixel X-Ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Chervenak, F. M.

2011-01-01

We are developing kilo-pixel arrays of TES microcalorimeters to enable high-resolution X-ray imaging spectrometers for future X-ray observatories and laboratory astrophysics experiments. Our current array design was targeted as a prototype for the X-ray Microcalorimeter Spectrometer proposed for the International X-ray Observatory, which calls for a 40x40-pixel core array of 300 micron devices with 2.5 e V energy resolution (at 6 keV). Here we present device characterization of our 32x32 arrays, including X-ray spectral performance of individual pixels within the array. We present our results in light of the understanding that our Mo/Au TESs act as weak superconducting links, causing the TES critical current (Ic) and transition shape to oscillate with applied magnetic field (B). We show Ic(B) measurements and discuss the uniformity of these measurements across the array, as well as implications regarding the uniformity of device noise and response. In addition, we are working to reduce pixel-to-pixel electrical and thermal crosstalk; we present recent test results from an array that has microstrip wiring and an angle-evaporated Cu backside heatsinking layer, which provides Cu coverage on the four sidewalls of the silicon wells beneath each pixel.

Progress on the FDM Development at SRON: Toward 160 Pixels

NASA Astrophysics Data System (ADS)

den Hartog, R. H.; Bruijn, M. P.; Clenet, A.; Gottardi, L.; Hijmering, R.; Jackson, B. D.; van der Kuur, J.; van Leeuwen, B. J.; van der Linden, A. J.; van Loon, D.; Nieuwenhuizen, A.; Ridder, M.; van Winden, P.

2014-08-01

SRON is developing the electronic read-out for arrays of transition edge sensors using frequency domain multiplexing in combination with base-band feedback. The astronomical applications of this system are the read-out of soft X-ray micro-calorimeters in a potential instrument on the European X-ray mission-under-study Athena+ and far-IR bolometers for the Safari instrument on the Japanese mission SPICA. In this paper we demonstrate the simultaneous read-out of 38 bolometer pixels at a 12 aW/Hz dark NEP level. The stability of the read-out is assessed over 400 s. time spans. Although some 1/f noise is present, there are several bolometers for which 1/f-free read-out can be demonstrated.

Real time thermal imaging for analysis and control of crystal growth by the Czochralski technique

NASA Technical Reports Server (NTRS)

Wargo, M. J.; Witt, A. F.

1992-01-01

A real time thermal imaging system with temperature resolution better than +/- 0.5 C and spatial resolution of better than 0.5 mm has been developed. It has been applied to the analysis of melt surface thermal field distributions in both Czochralski and liquid encapsulated Czochralski growth configurations. The sensor can provide single/multiple point thermal information; a multi-pixel averaging algorithm has been developed which permits localized, low noise sensing and display of optical intensity variations at any location in the hot zone as a function of time. Temperature distributions are measured by extraction of data along a user selectable linear pixel array and are simultaneously displayed, as a graphic overlay, on the thermal image.

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

NASA Astrophysics Data System (ADS)

Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

2004-06-01

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

Performance of 4x5120 Element Visible and 2x2560 Element Shortwave Infrared Multispectral Focal Planes

NASA Astrophysics Data System (ADS)

Tower, J. R.; Cope, A. D.; Pellion, L. E.; McCarthy, B. M.; Strong, R. T.; Kinnard, K. F.; Moldovan, A. G.; Levine, P. A.; Elabd, H.; Hoffman, D. M.

1985-12-01

Performance measurements of two Multispectral Linear Array focal planes are presented. Both pushbroom sensors have been developed for application in remote sensing instruments. A buttable, four-spectral-band, linear-format charge coupled device (CCD) and a but-table, two-spectral-band, linear-format, shortwave infrared charge coupled device (IRCCD) have been developed under NASA funding. These silicon integrated circuits may be butted end to end to provide very-high-resolution multispectral focal planes. The visible CCD is organized as four sensor lines of 1024 pixels each. Each line views the scene in a different spectral window defined by integral optical bandpass filters. A prototype focal plane with five devices, providing 4x5120-pixel resolution has been demonstrated. The high quantum efficiency of the backside-illuminated CCD technology provides excellent signal-to-noise performance and unusually high MTF across the entire visible and near-IR spectrum. The shortwave infrared (SWIR) sensor is organized as two line sensors of 512 detectors each. The SWIR (1-2.5 μm) spectral windows may be defined by bandpass filters placed in close proximity to the devices. The dual-band sensor consists of Schottky barrier detectors read out by CCD multiplexers. This monolithic sensor operates at 125°K with radiometric performance. A prototype five-device focal plane providing 2x2560 detectors has been demonstrated. The devices provide very high uniformity, and excellent MTF across the SWIR band.

High-speed line-scan camera with digital time delay integration

NASA Astrophysics Data System (ADS)

Bodenstorfer, Ernst; Fürtler, Johannes; Brodersen, Jörg; Mayer, Konrad J.; Eckel, Christian; Gravogl, Klaus; Nachtnebel, Herbert

2007-02-01

Dealing with high-speed image acquisition and processing systems, the speed of operation is often limited by the amount of available light, due to short exposure times. Therefore, high-speed applications often use line-scan cameras, based on charge-coupled device (CCD) sensors with time delayed integration (TDI). Synchronous shift and accumulation of photoelectric charges on the CCD chip - according to the objects' movement - result in a longer effective exposure time without introducing additional motion blur. This paper presents a high-speed color line-scan camera based on a commercial complementary metal oxide semiconductor (CMOS) area image sensor with a Bayer filter matrix and a field programmable gate array (FPGA). The camera implements a digital equivalent to the TDI effect exploited with CCD cameras. The proposed design benefits from the high frame rates of CMOS sensors and from the possibility of arbitrarily addressing the rows of the sensor's pixel array. For the digital TDI just a small number of rows are read out from the area sensor which are then shifted and accumulated according to the movement of the inspected objects. This paper gives a detailed description of the digital TDI algorithm implemented on the FPGA. Relevant aspects for the practical application are discussed and key features of the camera are listed.

Studies of the Superconducting Transition in the Mo/Au-Bilayer Thin Films

NASA Technical Reports Server (NTRS)

Sadleir, John; Smith, Stephen; Iyomoto, naoko; Bandler, Simon; Chervenak, Jay; Brown, Ari; Brekowsky, Regis; Kilbourne, Caroline; Robinson, Ian

2007-01-01

At NASA Goddard, microcalorimeter arrays using superconducting transition edge sensor thermometers (TESs) are under development for high energy resolution X-ray astrophysics applications. We report on our studies of the superconducting transition in our Mo/Au-bilayer TES films including: low current measurements of the superconducting bilayer's resistance transition versus temperature on pixels with different normal metal absorber attachment designs and measured temperature scaling of the critical current and critical magnetic field.

Updates on the Transition-Edge Sensors and Multiplexed Readout for HOLMES

NASA Astrophysics Data System (ADS)

Puiu, A.; Becker, D.; Bennett, D.; Biasotti, M.; Borghesi, M.; Ceriale, V.; De Gerone, M.; Faverzani, M.; Ferri, E.; Fowler, J.; Gallucci, G.; Gard, J.; Hays-Wehle, J.; Hilton, G.; Giachero, A.; Mates, J.; Nucciotti, A.; Orlando, A.; Pessina, G.; Schmidt, D.; Swetz, D.; Ullom, J.; Vale, L.

2018-05-01

Measuring the neutrino mass is one of the most compelling issues in particle physics. HOLMES is an experiment for a direct measurement of the neutrino mass. HOLMES will perform a precise measurement of the end point of the electron capture decay spectrum of ^{163}Ho in order to extract information on the neutrino mass with a sensitivity as low as 1 eV. HOLMES, in its final configuration, will deploy a 1000-pixel array of low-temperature microcalorimeters: each calorimeter is made of an absorber, where the Ho atoms will be implanted, coupled to a transition-edge sensor (TES) thermometer. The detectors will be operated at the working temperature of 100 mK provided by a dilution refrigerator. In order to read out the 1000-detector array of HOLMES, a multiplexing system is necessary: the choice is to couple the transition-edge sensors to a multiplexed rf-SQUID. In this contribution we outline the progress made towards the final configuration of HOLMES regarding both the performances of the TES detectors and the characteristics of the multiplexing system.

Micro-Hall devices for magnetic, electric and photo-detection

NASA Astrophysics Data System (ADS)

Gilbertson, A.; Sadeghi, H.; Panchal, V.; Kazakova, O.; Lambert, C. J.; Solin, S. A.; Cohen, L. F.

Multifunctional mesoscopic sensors capable of detecting local magnetic (B) , electric (E) , and optical fields can greatly facilitate image capture in nano-arrays that address a multitude of disciplines. The use of micro-Hall devices as B-field sensors and, more recently as E-field sensors is well established. Here we report the real-space voltage response of InSb/AlInSb micro-Hall devices to not only local E-, and B-fields but also to photo-excitation using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local E-fields. Our experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. At room temperature, samples exhibit a magnetic sensitivity of >500 nT/ √Hz, an optical noise equivalent power of >20 pW/ √Hz (λ = 635 nm) comparable to commercial photoconductive detectors, and charge sensitivity of >0.04 e/ √Hz comparable to that of single electron transistors. Work done while on sabbatical from Washington University. Co-founder of PixelEXX, a start-up whose focus is imaging nano-arrays.

Increasing Linear Dynamic Range of a CMOS Image Sensor

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2007-01-01

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Microlens performance limits in sub-2mum pixel CMOS image sensors.

PubMed

Huo, Yijie; Fesenmaier, Christian C; Catrysse, Peter B

2010-03-15

CMOS image sensors with smaller pixels are expected to enable digital imaging systems with better resolution. When pixel size scales below 2 mum, however, diffraction affects the optical performance of the pixel and its microlens, in particular. We present a first-principles electromagnetic analysis of microlens behavior during the lateral scaling of CMOS image sensor pixels. We establish for a three-metal-layer pixel that diffraction prevents the microlens from acting as a focusing element when pixels become smaller than 1.4 microm. This severely degrades performance for on and off-axis pixels in red, green and blue color channels. We predict that one-metal-layer or backside-illuminated pixels are required to extend the functionality of microlenses beyond the 1.4 microm pixel node.

Information-Efficient Spectral Imaging Sensor With Tdi

DOEpatents

Rienstra, Jeffrey L.; Gentry, Stephen M.; Sweatt, William C.

2004-01-13

A programmable optical filter for use in multispectral and hyperspectral imaging employing variable gain time delay and integrate arrays. A telescope focuses an image of a scene onto at least one TDI array that is covered by a multispectral filter that passes separate bandwidths of light onto the rows in the TDI array. The variable gain feature of the TDI array allows individual rows of pixels to be attenuated individually. The attenuations are functions of the magnitudes of the positive and negative components of a spectral basis vector. The spectral basis vector is constructed so that its positive elements emphasize the presence of a target and its negative elements emphasize the presence of the constituents of the background of the imaged scene. This system provides for a very efficient determination of the presence of the target, as opposed to the very data intensive data manipulations that are required in conventional hyperspectral imaging systems.

Hot pixel generation in active pixel sensors: dosimetric and micro-dosimetric response

NASA Technical Reports Server (NTRS)

Scheick, Leif; Novak, Frank

2003-01-01

The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.

Method of fabrication of display pixels driven by silicon thin film transistors

DOEpatents

Carey, Paul G.; Smith, Patrick M.

1999-01-01

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Ultrasensitive Kilo-Pixel Imaging Array of Photon Noise-Limited Kinetic Inductance Detectors Over an Octave of Bandwidth for THz Astronomy

NASA Astrophysics Data System (ADS)

Bueno, J.; Murugesan, V.; Karatsu, K.; Thoen, D. J.; Baselmans, J. J. A.

2018-05-01

We present the development of a background-limited kilo-pixel imaging array of ultrawide bandwidth kinetic inductance detectors (KIDs) suitable for space-based THz astronomy applications. The array consists of 989 KIDs, in which the radiation is coupled to each KID via a leaky lens antenna, covering the frequency range between 1.4 and 2.8 THz. The single pixel performance is fully characterised using a representative small array in terms of sensitivity, optical efficiency, beam pattern and frequency response, matching very well its expected performance. The kilo-pixel array is characterised electrically, finding a yield larger than 90% and an averaged noise-equivalent power lower than 3 × 10^{-19} W/Hz^{1/2} . The interaction between the kilo-pixel array and cosmic rays is studied, with an expected dead time lower than 0.6% when operated in an L2 or a similar far-Earth orbit.

Optical design of infrared pyramid wavefront sensor for the MMT

NASA Astrophysics Data System (ADS)

Chen, Shaojie; Sivanandam, Suresh; Liu, Siqi; Veran, Jean-Pierre; Hinz, Phil; Mieda, Etsuko; Hardy, Tim; Lardiere, Olivier

2017-09-01

We report the optical design of an infrared (0.85-1.8 μm) pyramid wavefront sensor (IRPWFS) that is designed for the 6.5m MMT on telescope adaptive optics system using the latest developments in low-noise infrared avalanche photodiode arrays. The comparison between the pyramid and the double-roof prism based wavefront sensors and the evaluation of their micro pupils' quality are presented. According to our analysis, the use of two double-roof prisms with achromatic materials produces the competitive performance when compared to the traditional pyramid prism, which is difficult to manufacture. The final micro pupils on the image plane have the residual errors of pupil position, chromatism, and distortion within 1/10 pixel over the 2×2 arcsecond field of view, which meet the original design goals.

Image sensor system with bio-inspired efficient coding and adaptation.

PubMed

Okuno, Hirotsugu; Yagi, Tetsuya

2012-08-01

We designed and implemented an image sensor system equipped with three bio-inspired coding and adaptation strategies: logarithmic transform, local average subtraction, and feedback gain control. The system comprises a field-programmable gate array (FPGA), a resistive network, and active pixel sensors (APS), whose light intensity-voltage characteristics are controllable. The system employs multiple time-varying reset voltage signals for APS in order to realize multiple logarithmic intensity-voltage characteristics, which are controlled so that the entropy of the output image is maximized. The system also employs local average subtraction and gain control in order to obtain images with an appropriate contrast. The local average is calculated by the resistive network instantaneously. The designed system was successfully used to obtain appropriate images of objects that were subjected to large changes in illumination.

Real-time object tracking based on scale-invariant features employing bio-inspired hardware.

PubMed

Yasukawa, Shinsuke; Okuno, Hirotsugu; Ishii, Kazuo; Yagi, Tetsuya

2016-09-01

We developed a vision sensor system that performs a scale-invariant feature transform (SIFT) in real time. To apply the SIFT algorithm efficiently, we focus on a two-fold process performed by the visual system: whole-image parallel filtering and frequency-band parallel processing. The vision sensor system comprises an active pixel sensor, a metal-oxide semiconductor (MOS)-based resistive network, a field-programmable gate array (FPGA), and a digital computer. We employed the MOS-based resistive network for instantaneous spatial filtering and a configurable filter size. The FPGA is used to pipeline process the frequency-band signals. The proposed system was evaluated by tracking the feature points detected on an object in a video. Copyright © 2016 Elsevier Ltd. All rights reserved.

Multipurpose active pixel sensor (APS)-based microtracker

NASA Astrophysics Data System (ADS)

Eisenman, Allan R.; Liebe, Carl C.; Zhu, David Q.

1998-12-01

A new, photon-sensitive, imaging array, the active pixel sensor (APS) has emerged as a competitor to the CCD imager for use in star and target trackers. The Jet Propulsion Laboratory (JPL) has undertaken a program to develop a new generation, highly integrated, APS-based, multipurpose tracker: the Programmable Intelligent Microtracker (PIM). The supporting hardware used in the PIM has been carefully selected to enhance the inherent advantages of the APS. Adequate computation power is included to perform star identification, star tracking, attitude determination, space docking, feature tracking, descent imaging for landing control, and target tracking capabilities. Its first version uses a JPL developed 256 X 256-pixel APS and an advanced 32-bit RISC microcontroller. By taking advantage of the unique features of the APS/microcontroller combination, the microtracker will achieve about an order-of-magnitude reduction in mass and power consumption compared to present state-of-the-art star trackers. It will also add the advantage of programmability to enable it to perform a variety of star, other celestial body, and target tracking tasks. The PIM is already proving the usefulness of its design concept for space applications. It is demonstrating the effectiveness of taking such an integrated approach in building a new generation of high performance, general purpose, tracking instruments to be applied to a large variety of future space missions.

High-speed high-resolution epifluorescence imaging system using CCD sensor and digital storage for neurobiological research

NASA Astrophysics Data System (ADS)

Takashima, Ichiro; Kajiwara, Riichi; Murano, Kiyo; Iijima, Toshio; Morinaka, Yasuhiro; Komobuchi, Hiroyoshi

2001-04-01

We have designed and built a high-speed CCD imaging system for monitoring neural activity in an exposed animal cortex stained with a voltage-sensitive dye. Two types of custom-made CCD sensors were developed for this system. The type I chip has a resolution of 2664 (H) X 1200 (V) pixels and a wide imaging area of 28.1 X 13.8 mm, while the type II chip has 1776 X 1626 pixels and an active imaging area of 20.4 X 18.7 mm. The CCD arrays were constructed with multiple output amplifiers in order to accelerate the readout rate. The two chips were divided into either 24 (I) or 16 (II) distinct areas that were driven in parallel. The parallel CCD outputs were digitized by 12-bit A/D converters and then stored in the frame memory. The frame memory was constructed with synchronous DRAM modules, which provided a capacity of 128 MB per channel. On-chip and on-memory binning methods were incorporated into the system, e.g., this enabled us to capture 444 X 200 pixel-images for periods of 36 seconds at a rate of 500 frames/second. This system was successfully used to visualize neural activity in the cortices of rats, guinea pigs, and monkeys.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

1996-01-01

The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

Realistic full wave modeling of focal plane array pixels

DOE PAGES

Campione, Salvatore; Warne, Larry K.; Jorgenson, Roy E.; ...

2017-11-01

Here, we investigate full-wave simulations of realistic implementations of multifunctional nanoantenna enabled detectors (NEDs). We focus on a 2x2 pixelated array structure that supports two wavelengths of operation. We design each resonating structure independently using full-wave simulations with periodic boundary conditions mimicking the whole infinite array. We then construct a supercell made of a 2x2 pixelated array with periodic boundary conditions mimicking the full NED; in this case, however, each pixel comprises 10-20 antennas per side. In this way, the cross-talk between contiguous pixels is accounted for in our simulations. We observe that, even though there are finite extent effects,more » the pixels work as designed, each responding at the respective wavelength of operation. This allows us to stress that realistic simulations of multifunctional NEDs need to be performed to verify the design functionality by taking into account finite extent and cross-talk effects.« less

Linear array optical edge sensor

NASA Technical Reports Server (NTRS)

Bejczy, Antal K. (Inventor); Primus, Howard C. (Inventor)

1987-01-01

A series of independent parallel pairs of light emitting and detecting diodes for a linear pixel array, which is laterally positioned over an edge-like discontinuity in a workpiece to be scanned, is disclosed. These independent pairs of light emitters and detectors sense along intersecting pairs of separate optical axes. A discontinuity, such as an edge in the sensed workpiece, reflects a detectable difference in the amount of light from that discontinuity in comparison to the amount of light that is reflected on either side of the discontinuity. A sequentially sychronized clamping and sampling circuit detects that difference as an electrical signal which is recovered by circuitry that exhibits an improved signal-to-noise capability for the system.

Method and apparatus of high dynamic range image sensor with individual pixel reset

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric R. (Inventor)

2001-01-01

A wide dynamic range image sensor provides individual pixel reset to vary the integration time of individual pixels. The integration time of each pixel is controlled by column and row reset control signals which activate a logical reset transistor only when both signals coincide for a given pixel.

System and method for generating a deselect mapping for a focal plane array

DOEpatents

Bixler, Jay V; Brandt, Timothy G; Conger, James L; Lawson, Janice K

2013-05-21

A method for generating a deselect mapping for a focal plane array according to one embodiment includes gathering a data set for a focal plane array when exposed to light or radiation from a first known target; analyzing the data set for determining which pixels or subpixels of the focal plane array to add to a deselect mapping; adding the pixels or subpixels to the deselect mapping based on the analysis; and storing the deselect mapping. A method for gathering data using a focal plane array according to another embodiment includes deselecting pixels or subpixels based on a deselect mapping; gathering a data set using pixels or subpixels in a focal plane array that are not deselected upon exposure thereof to light or radiation from a target of interest; and outputting the data set.

Charge Sharing and Charge Loss in a Cadmium-Zinc-Telluride Fine-Pixel Detector Array

NASA Technical Reports Server (NTRS)

Gaskin, J. A.; Sharma, D. P.; Ramsey, B. D.; Six, N. Frank (Technical Monitor)

2002-01-01

Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.

Materials Development for Auxiliary Components for Large Compact Mo/Au TES Arrays

NASA Technical Reports Server (NTRS)

Finkbeiner, F. m.; Chervenak, J. A.; Bandler, S. R.; Brekosky, R.; Brown, A. D.; Figueroa-Feliciano, E.; Iyomoto, N.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.;

Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

NASA Astrophysics Data System (ADS)

Chen, Cao; Bing, Zhang; Junfeng, Wang; Longsheng, Wu

2016-05-01

The charge transfer potential barrier (CTPB) formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode (PPD) CMOS image sensors (CIS), and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was performed in detail on the principle of the proposed method. Application of the measurements on a prototype PPD-CIS chip with an array of 160 × 160 pixels is demonstrated. Such a method intends to shine new light on the guidance for the lag-free and high-speed sensors optimization based on PPD devices. Project supported by the National Defense Pre-Research Foundation of China (No. 51311050301095).

Limits in point to point resolution of MOS based pixels detector arrays

NASA Astrophysics Data System (ADS)

Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

2018-01-01

In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

A CMOS In-Pixel CTIA High Sensitivity Fluorescence Imager.

PubMed

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2011-10-01

Traditionally, charge coupled device (CCD) based image sensors have held sway over the field of biomedical imaging. Complementary metal oxide semiconductor (CMOS) based imagers so far lack sensitivity leading to poor low-light imaging. Certain applications including our work on animal-mountable systems for imaging in awake and unrestrained rodents require the high sensitivity and image quality of CCDs and the low power consumption, flexibility and compactness of CMOS imagers. We present a 132×124 high sensitivity imager array with a 20.1 μm pixel pitch fabricated in a standard 0.5 μ CMOS process. The chip incorporates n-well/p-sub photodiodes, capacitive transimpedance amplifier (CTIA) based in-pixel amplification, pixel scanners and delta differencing circuits. The 5-transistor all-nMOS pixel interfaces with peripheral pMOS transistors for column-parallel CTIA. At 70 fps, the array has a minimum detectable signal of 4 nW/cm(2) at a wavelength of 450 nm while consuming 718 μA from a 3.3 V supply. Peak signal to noise ratio (SNR) was 44 dB at an incident intensity of 1 μW/cm(2). Implementing 4×4 binning allowed the frame rate to be increased to 675 fps. Alternately, sensitivity could be increased to detect about 0.8 nW/cm(2) while maintaining 70 fps. The chip was used to image single cell fluorescence at 28 fps with an average SNR of 32 dB. For comparison, a cooled CCD camera imaged the same cell at 20 fps with an average SNR of 33.2 dB under the same illumination while consuming over a watt.

A CMOS In-Pixel CTIA High Sensitivity Fluorescence Imager

PubMed Central

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2012-01-01

Traditionally, charge coupled device (CCD) based image sensors have held sway over the field of biomedical imaging. Complementary metal oxide semiconductor (CMOS) based imagers so far lack sensitivity leading to poor low-light imaging. Certain applications including our work on animal-mountable systems for imaging in awake and unrestrained rodents require the high sensitivity and image quality of CCDs and the low power consumption, flexibility and compactness of CMOS imagers. We present a 132×124 high sensitivity imager array with a 20.1 μm pixel pitch fabricated in a standard 0.5 μ CMOS process. The chip incorporates n-well/p-sub photodiodes, capacitive transimpedance amplifier (CTIA) based in-pixel amplification, pixel scanners and delta differencing circuits. The 5-transistor all-nMOS pixel interfaces with peripheral pMOS transistors for column-parallel CTIA. At 70 fps, the array has a minimum detectable signal of 4 nW/cm2 at a wavelength of 450 nm while consuming 718 μA from a 3.3 V supply. Peak signal to noise ratio (SNR) was 44 dB at an incident intensity of 1 μW/cm2. Implementing 4×4 binning allowed the frame rate to be increased to 675 fps. Alternately, sensitivity could be increased to detect about 0.8 nW/cm2 while maintaining 70 fps. The chip was used to image single cell fluorescence at 28 fps with an average SNR of 32 dB. For comparison, a cooled CCD camera imaged the same cell at 20 fps with an average SNR of 33.2 dB under the same illumination while consuming over a watt. PMID:23136624

3-D readout-electronics packaging for high-bandwidth massively paralleled imager

DOEpatents

Kwiatkowski, Kris; Lyke, James

2007-12-18

Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a "mirror cube"). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45.degree. angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.

Dual-mode lensless imaging device for digital enzyme linked immunosorbent assay

NASA Astrophysics Data System (ADS)

Sasagawa, Kiyotaka; Kim, Soo Heyon; Miyazawa, Kazuya; Takehara, Hironari; Noda, Toshihiko; Tokuda, Takashi; Iino, Ryota; Noji, Hiroyuki; Ohta, Jun

2014-03-01

Digital enzyme linked immunosorbent assay (ELISA) is an ultra-sensitive technology for detecting biomarkers and viruses etc. As a conventional ELISA technique, a target molecule is bonded to an antibody with an enzyme by antigen-antibody reaction. In this technology, a femto-liter droplet chamber array is used as reaction chambers. Due to its small volume, the concentration of fluorescent product by single enzyme can be sufficient for detection by a fluorescent microscopy. In this work, we demonstrate a miniaturized lensless imaging device for digital ELISA by using a custom image sensor. The pixel array of the sensor is coated with a 20 μm-thick yellow filter to eliminate excitation light at 470 nm and covered by a fiber optic plate (FOP) to protect the sensor without resolution degradation. The droplet chamber array formed on a 50μm-thick glass plate is directly placed on the FOP. In the digital ELISA, microbeads coated with antibody are loaded into the droplet chamber array, and the ratio of the fluorescent to the non-fluorescent chambers with the microbeads are observed. In the fluorescence imaging, the spatial resolution is degraded by the spreading through the glass plate because the fluorescence is irradiated omnidirectionally. This degradation is compensated by image processing and the resolution of ~35 μm was achieved. In the bright field imaging, the projected images of the beads with collimated illumination are observed. By varying the incident angle and image composition, microbeads were successfully imaged.

The SOFIA/SAFIRE Far-Infrared Spectrometer: Highlighting Submillimeter Astrophysics and Technology

NASA Technical Reports Server (NTRS)

Benford, Dominic J.

2009-01-01

The Submillimeter and Far-InfraRed Experiment (SAFIRE) on the SOFIA airborne observatory is an imaging spectrometer for wavelengths between 28 microns and 440 microns. Our design is a dual-band long-slit grating spectrometer, which provides broadband (approx. 4000 km/s) observations in two lines simultaneously over a field of view roughly 10" wide by 320" long. The low backgrounds in spectroscopy require very sensitive detectors with noise equivalent powers of order 10(exp -18) W/square root of Hz. We are developing a kilopixel, filled detector array for SAFIRE in a 32 x 40 format. The detector consists of a transition edge sensor (TES) bolometer array, a per-pixel broadband absorbing backshort array, and a NIST SQUID multiplexer readout array. This general type of array has been used successfully in the GISMO instrument, so we extrapolate to the sensitivity needed for airborne spectroscopy. Much of the cryogenic, electronics, and software infrastructure for SAFIRE have been developed. I provide here an overview of the progress on SAFIRE.

Real-time system for measuring three-dimensional shape of solder bump array by focus using varifocal mirror

NASA Astrophysics Data System (ADS)

Ishii, Akira; Tai, Haruka; Mitsudo, Jun

2007-10-01

This paper describes a real-time system for measuring the three-dimensional shape of solder bumps arrayed on an LSI chip-size-package (CSP) board presented for inspection based on the shape-from-focus technique. It uses a copper-alloy mirror deformed by a piezoelectric actuator as a varifocal mirror enabling a simple, fast, precise focusing mechanism without moving parts to be built. A practical measuring speed of 1.69 s/package for a small CSP board (4 x 4 mm2) was achieved by incorporating an exclusive field programmable gate array processor to calculate focus measure and by constructing a domed array of LEDs as a high-intensity, uniform illumination system so that a fast (150 fps) and high-resolution (1024 x 1024 pixels/frame) CMOS image sensor could be used. Accurate measurements of bump height were also achieved with errors of 10 μm (2σ) meeting the requirements for testing the coplanarity of a bump array.

Readout of a 176 pixel FDM system for SAFARI TES arrays

NASA Astrophysics Data System (ADS)

Hijmering, R. A.; den Hartog, R.; Ridder, M.; van der Linden, A. J.; van der Kuur, J.; Gao, J. R.; Jackson, B.

2016-07-01

In this paper we present the results of our 176-pixel prototype of the FDM readout system for SAFARI, a TES-based focal-plane instrument for the far-IR SPICA mission. We have implemented the knowledge obtained from the detailed study on electrical crosstalk reported previously. The effect of carrier leakage is reduced by a factor two, mutual impedance is reduced to below 1 nH and mutual inductance is removed. The pixels are connected in stages, one quarter of the array half of the array and the full array, to resolve intermediate technical issues. A semi-automated procedure was incorporated to find all optimal settings for all pixels. And as a final step the complete array has been connected and 132 pixels have been read out simultaneously within the frequency range of 1-3.8MHz with an average frequency separation of 16kHz. The noise was found to be detector limited and was not affected by reading out all pixels in a FDM mode. With this result the concept of using FDM for multiplexed bolometer read out for the SAFARI instrument has been demonstrated.

High-voltage pixel sensors for ATLAS upgrade

NASA Astrophysics Data System (ADS)

Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

2014-11-01

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

Fifty Years of Lightning Observations from Space

NASA Astrophysics Data System (ADS)

Christian, H. J., Jr.

2017-12-01

Some of the earliest satellites, starting with OSO (1965), ARIEL (1967), and RAE (1968), detected lightning using either optical and RF sensors, although that was not their intent. One of the earliest instruments designed to detect lightning was the PBE (1977). The use of space to study lightning activity has exploded since these early days. The advent of focal-plane imaging arrays made it possible to develop high performance optical lightning sensors. Prior to the use of charged-coupled devices (CCD), most space-based lightning sensors used only a few photo-diodes, which limited the location accuracy and detection efficiency (DE) of the instruments. With CCDs, one can limit the field of view of each detector (pixel), and thus improve the signal to noise ratio over single-detectors that summed the light reflected from many clouds with the lightning produced by a single cloud. This pixelization enabled daytime DE to increase from a few percent to close to 90%. The OTD (1995), and the LIS (1997), were the first lightning sensors to utilize focal-plane arrays. Together they detected global lightning activity for more than twenty years, providing the first detailed information on the distribution of global lightning and its variability. The FORTE satellite was launched shortly after LIS, and became the first dedicated satellite to simultaneously measure RF and optical lightning emissions. It too used a CCD focal plane to detect and locate lightning. In November 2016, the GLM became the first lightning instrument in geostationary orbit. Shortly thereafter, China placed its GLI in orbit. Lightning sensors in geostationary orbit significantly increase the value of space-based observations. For the first time, lightning activity can be monitored continuously, over large areas of the Earth with high, uniform DE and location accuracy. In addition to observing standard lightning, a number of sensors have been placed in orbit to detect transient luminous events and tropospheric gamma-ray flashes. A lineal history of space-based lightning observations will be presented as well as a discussion of the scientific contributions made possible by these instruments. In addition, relative merits of space versus ground measurements will be addressed, as well as an effort to demonstrate the complementary nature of the two approaches.

Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

NASA Astrophysics Data System (ADS)

Miller, Timothy M.; Abrahams, John H.; Allen, Christine A.

2006-04-01

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays.

PubMed

Schuster, Jonathan; Bellotti, Enrico

2013-06-17

We have investigated crosstalk in HgCdTe photovoltaic pixel arrays employing a photon trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation. We have found that, compared to non-PT pixel arrays with similar geometry, the array employing the PT structure has a slightly higher optical crosstalk. However, when the total crosstalk is evaluated, the presence of the PT region drastically reduces the total crosstalk; making the use of the PT structure not only useful to obtain broadband operation, but also desirable for reducing crosstalk in small pitch detector arrays.

Ultra-low-noise transition edge sensors for the SAFARI L-band on SPICA

NASA Astrophysics Data System (ADS)

Goldie, D. J.; Gao, J. R.; Glowacka, D. M.; Griffin, D. K.; Hijmering, R.; Khosropanah, P.; Jackson, B. D.; Mauskopf, P. D.; Morozov, D.; Murphy, J. A.; Ridder, M.; Trappe, N.; O'Sullivan, C.; Withington, S.

2012-09-01

The Far-Infrared Fourier transform spectrometer instrument SAFARI-SPICA which will operate with cooled optics in a low-background space environment requires ultra-sensitive detector arrays with high optical coupling efficiencies over extremely wide bandwidths. In earlier papers we described the design, fabrication and performance of ultra-low-noise Transition Edge Sensors (TESs) operated close to 100mk having dark Noise Equivalent Powers (NEPs) of order 4 × 10-19W/√Hz close to the phonon noise limit and an improvement of two orders of magnitude over TESs for ground-based applications. Here we describe the design, fabrication and testing of 388-element arrays of MoAu TESs integrated with far-infrared absorbers and optical coupling structures in a geometry appropriate for the SAFARI L-band (110 - 210 μm). The measured performance shows intrinsic response time τ ~ 11ms and saturation powers of order 10 fW, and a dark noise equivalent powers of order 7 × 10-19W/√Hz. The 100 × 100μm2 MoAu TESs have transition temperatures of order 110mK and are coupled to 320×320μm2 thin-film β-phase Ta absorbers to provide impedance matching to the incoming fields. We describe results of dark tests (i.e without optical power) to determine intrinsic pixel characteristics and their uniformity, and measurements of the optical performance of representative pixels operated with flat back-shorts coupled to pyramidal horn arrays. The measured and modeled optical efficiency is dominated by the 95Ω sheet resistance of the Ta absorbers, indicating a clear route to achieve the required performance in these ultra-sensitive detectors.

Development of arrays of position-sensitive microcalorimeters for Constellation-X

NASA Technical Reports Server (NTRS)

Smith, S. J.; Bandler, S. R.; Brekosky, R. P.; Brown, A.-D.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Kolbourne, C. A.;

Correlation plenoptic imaging

NASA Astrophysics Data System (ADS)

Pepe, Francesco V.; Di Lena, Francesco; Garuccio, Augusto; D'Angelo, Milena

2017-06-01

Plenoptic Imaging (PI) is a novel optical technique for achieving tridimensional imaging in a single shot. In conventional PI, a microlens array is inserted in the native image plane and the sensor array is moved behind the microlenses. On the one hand, the microlenses act as imaging pixels to reproduce the image of the scene; on the other hand, each microlens reproduces on the sensor array an image of the camera lens, thus providing the angular information associated with each imaging pixel. The recorded propagation direction is exploited, in post- processing, to computationally retrace the geometrical light path, thus enabling the refocusing of different planes within the scene, the extension of the depth of field of the acquired image, as well as the 3D reconstruction of the scene. However, a trade-off between spatial and angular resolution is built in the standard plenoptic imaging process. We demonstrate that the second-order spatio-temporal correlation properties of light can be exploited to overcome this fundamental limitation. Using two correlated beams, from either a chaotic or an entangled photon source, we can perform imaging in one arm and simultaneously obtain the angular information in the other arm. In fact, we show that the second order correlation function possesses plenoptic imaging properties (i.e., it encodes both spatial and angular information), and is thus characterized by a key re-focusing and 3D imaging capability. From a fundamental standpoint, the plenoptic application is the first situation where the counterintuitive properties of correlated systems are effectively used to beat intrinsic limits of standard imaging systems. From a practical standpoint, our protocol can dramatically enhance the potentials of PI, paving the way towards its promising applications.

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

NASA Astrophysics Data System (ADS)

Macchiolo, A.; Nisius, R.; Savic, N.; Terzo, S.

2016-09-01

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 ×1015 neq /cm2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50×50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80°) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

Graphical User Interface for a Dual-Module EMCCD X-ray Detector Array.

PubMed

Wang, Weiyuan; Ionita, Ciprian; Kuhls-Gilcrist, Andrew; Huang, Ying; Qu, Bin; Gupta, Sandesh K; Bednarek, Daniel R; Rudin, Stephen

2011-03-16

A new Graphical User Interface (GUI) was developed using Laboratory Virtual Instrumentation Engineering Workbench (LabVIEW) for a high-resolution, high-sensitivity Solid State X-ray Image Intensifier (SSXII), which is a new x-ray detector for radiographic and fluoroscopic imaging, consisting of an array of Electron-Multiplying CCDs (EMCCDs) each having a variable on-chip electron-multiplication gain of up to 2000× to reduce the effect of readout noise. To enlarge the field-of-view (FOV), each EMCCD sensor is coupled to an x-ray phosphor through a fiberoptic taper. Two EMCCD camera modules are used in our prototype to form a computer-controlled array; however, larger arrays are under development. The new GUI provides patient registration, EMCCD module control, image acquisition, and patient image review. Images from the array are stitched into a 2k×1k pixel image that can be acquired and saved at a rate of 17 Hz (faster with pixel binning). When reviewing the patient's data, the operator can select images from the patient's directory tree listed by the GUI and cycle through the images using a slider bar. Commonly used camera parameters including exposure time, trigger mode, and individual EMCCD gain can be easily adjusted using the GUI. The GUI is designed to accommodate expansion of the EMCCD array to even larger FOVs with more modules. The high-resolution, high-sensitivity EMCCD modular-array SSXII imager with the new user-friendly GUI should enable angiographers and interventionalists to visualize smaller vessels and endovascular devices, helping them to make more accurate diagnoses and to perform more precise image-guided interventions.

Electrostatic artificial eyelid actuator as an analog micromirror device

NASA Astrophysics Data System (ADS)

Goodwin, Scott H.; Dausch, David E.; Solomon, Steven L.; Lamvik, Michael K.

2005-05-01

An electrostatic MEMS actuator is described for use as an analog micromirror device (AMD) for high performance, broadband, hardware-in-the-loop (HWIL) scene generation. Current state-of-the-art technology is based on resistively heated pixel arrays. As these arrays drive to the higher scene temperatures required by missile defense scenarios, the power required to drive the large format resistive arrays will ultimately become prohibitive. Existing digital micromirrors (DMD) are, in principle, capable of generating the required scene irradiances, but suffer from limited dynamic range, resolution and flicker effects. An AMD would be free of these limitations, and so represents a viable alternative for high performance UV/VIS/IR scene generation. An electrostatic flexible film actuator technology, developed for use as "artificial eyelid" shutters for focal plane sensors to protect against damaging radiation, is suitable as an AMD for analog control of projection irradiance. In shutter applications, the artificial eyelid actuator contained radius of curvature as low as 25um and operated at high voltage (>200V). Recent testing suggests that these devices are capable of analog operation as reflective microcantilever mirrors appropriate for scene projector systems. In this case, the device would possess larger radius and operate at lower voltages (20-50V). Additionally, frame rates have been measured at greater than 5kHz for continuous operation. The paper will describe the artificial eyelid technology, preliminary measurements of analog test pixels, and design aspects related to application for scene projection systems. We believe this technology will enable AMD projectors with at least 5122 spatial resolution, non-temporally-modulated output, and pixel response times of <1.25ms.

Nanostructured biosensor for detecting glucose in tear by applying fluorescence resonance energy transfer quenching mechanism.

PubMed

Chen, Longyi; Tse, Wai Hei; Chen, Yi; McDonald, Matthew W; Melling, James; Zhang, Jin

2017-05-15

In this paper, a nanostructured biosensor is developed to detect glucose in tear by using fluorescence resonance energy transfer (FRET) quenching mechanism. The designed FRET pair, including the donor, CdSe/ZnS quantum dots (QDs), and the acceptor, dextran-binding malachite green (MG-dextran), was conjugated to concanavalin A (Con A), an enzyme with specific affinity to glucose. In the presence of glucose, the quenched emission of QDs through the FRET mechanism is restored by displacing the dextran from Con A. To have a dual-modulation sensor for convenient and accurate detection, the nanostructured FRET sensors were assembled onto a patterned ZnO nanorod array deposited on the synthetic silicone hydrogel. Consequently, the concentration of glucose detected by the patterned sensor can be converted to fluorescence spectra with high signal-to-noise ratio and calibrated image pixel value. The photoluminescence intensity of the patterned FRET sensor increases linearly with increasing concentration of glucose from 0.03mmol/L to 3mmol/L, which covers the range of tear glucose levels for both diabetics and healthy subjects. Meanwhile, the calibrated values of pixel intensities of the fluorescence images captured by a handhold fluorescence microscope increases with increasing glucose. Four male Sprague-Dawley rats with different blood glucose concentrations were utilized to demonstrate the quick response of the patterned FRET sensor to 2µL of tear samples. Copyright © 2016 Elsevier B.V. All rights reserved.

Holographic pixel super-resolution in portable lensless on-chip microscopy using a fiber-optic array.

PubMed

Bishara, Waheb; Sikora, Uzair; Mudanyali, Onur; Su, Ting-Wei; Yaglidere, Oguzhan; Luckhart, Shirley; Ozcan, Aydogan

2011-04-07

We report a portable lensless on-chip microscope that can achieve <1 µm resolution over a wide field-of-view of ∼ 24 mm(2) without the use of any mechanical scanning. This compact on-chip microscope weighs ∼ 95 g and is based on partially coherent digital in-line holography. Multiple fiber-optic waveguides are butt-coupled to light emitting diodes, which are controlled by a low-cost micro-controller to sequentially illuminate the sample. The resulting lensfree holograms are then captured by a digital sensor-array and are rapidly processed using a pixel super-resolution algorithm to generate much higher resolution holographic images (both phase and amplitude) of the objects. This wide-field and high-resolution on-chip microscope, being compact and light-weight, would be important for global health problems such as diagnosis of infectious diseases in remote locations. Toward this end, we validate the performance of this field-portable microscope by imaging human malaria parasites (Plasmodium falciparum) in thin blood smears. Our results constitute the first-time that a lensfree on-chip microscope has successfully imaged malaria parasites.

Mitsubishi thermal imager using the 512 x 512 PtSi focal plane arrays

NASA Astrophysics Data System (ADS)

Fujino, Shotaro; Miyoshi, Tetsuo; Yokoh, Masataka; Kitahara, Teruyoshi

1990-01-01

MITSUBISHI THERMAL IMAGER model IR-5120A is high resolution and high sensitivity infrared television imaging system. It was exhibited in SPIE'S 1988 Technical Symposium on OPTICS, ELECTRO-OPTICS, and SENSORS, held at April 1988 Orlando, and acquired interest of many attendants of the symposium for it's high performance. The detector is a Platinium Silicide Charge Sweep Device (CSD) array containing more than 260,000 individual pixels manufactured by Mitsubishi Electric Co. The IR-5120A consists of a Camera Head. containing the CSD, a stirling cycle cooler and support electronics, and a Camera Control Unit containing the pixel fixed pattern noise corrector, video controllor, cooler driver and support power supplies. The stirling cycle cooler built into the Camera Head is used for keeping CSD temperature of approx. 80K with the features such as light weight, long life of more than 2000 hours and low acoustical noise. This paper describes an improved Thermal Imager, with more light weight, compact size and higher performance, and it's design philosophy, characteristics and field image.

CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

2006-01-01

This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

Small, Fast TES Microcalorimeters with Unprecedented X-ray Spectral Performance

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Chervenak, J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.; Sadleir, J. E.;

Modeling of HgCdTe focal plane array spectral inhomogeneities

NASA Astrophysics Data System (ADS)

Mouzali, Salima; Lefebvre, Sidonie; Rommeluère, Sylvain; Ferrec, Yann; Primot, Jérôme

2015-06-01

Infrared focal plane arrays (IRFPA) are widely used to perform high quality measurements such as spectrum acquisition at high rate, ballistic missile defense, gas detection, and hyperspectral imaging. For these applications, the fixed pattern noise represents one of the major limiting factors of the array performance. This sensor imperfection refers to the nonuniformity between pixels, and is partially caused by disparities of the cut-off wavenumbers. In this work, we focus particularly on mercury cadmium telluride (HgCdTe), which is the most important material of IR cooled detector applications. Among the many advantages of this ternary alloy is the tunability of the bandgap energy with Cadmium composition, as well as the high quantum efficiency. In order to predict and understand spectral inhomogeneities of HgCdTe-based IRFPA, we propose a modeling approach based on the description of optical phenomena inside the pixels. The model considers the p-n junctions as a unique absorbent bulk layer, and derives the sensitivity of the global structure to both Cadmium composition and HgCdTe layer thickness. For this purpose, HgCdTe optical and material properties were necessary to be known at low temperature (80K), in our operating conditions. We therefore achieved the calculation of the real part of the refractive index using subtracti

Performance measurements of hybrid PIN diode arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.F.; Kramer, G.

We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 {times} 64 pixels, each 120 {mu}m square, and the other format having 256 {times} 256 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurementsmore » of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs.« less

An 80x80 microbolometer type thermal imaging sensor using the LWIR-band CMOS infrared (CIR) technology

NASA Astrophysics Data System (ADS)

Tankut, Firat; Cologlu, Mustafa H.; Askar, Hidir; Ozturk, Hande; Dumanli, Hilal K.; Oruc, Feyza; Tilkioglu, Bilge; Ugur, Beril; Akar, Orhan Sevket; Tepegoz, Murat; Akin, Tayfun

2017-02-01

This paper introduces an 80x80 microbolometer array with a 35 μm pixel pitch operating in the 8-12 μm wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer approaches, MikroSens' CIR detector technology does not require the use of special high TCR materials like VOx or a-Si, instead, it allows to implement microbolometers with standard CMOS layers, where the suspended bulk micromachined structure is obtained by only few consecutive selective MEMS etching steps while protecting the wirebond pads with a simple lithograpy step. This approach not only reduces the fabrication cost but also increases the production yield. In addition, needing simple subtractive post-CMOS fabrication steps allows the CIR technology to be carried out in any CMOS and MEMS foundry in a truly fabless fashion, where industrially mature and Au-free wafer level vacuum packaging technologies can also be carried out, leading to cost advantage, simplicity, scalability, and flexibility. The CIR approach is used to implement an 80x80 FPA with 35 μm pixel pitch, namely MS0835A, using a 0.18 μm CMOS process. The fabricated sensor is measured to provide NETD (Noise Equivalent Temperature Difference) value of 163 mK at 17 fps (frames per second) and 71 mK at 4 fps with F/1.0 optics in a dewar environment. The measurement results of the wafer level vacuum packaged sensors with one side AR coating shows an NETD values of 112 mK at 4 fps with F/1.1 optics, i.e., demonstrates a good performance for high volume low-cost applications like advanced presence detection and human counting applications. The CIR approach of MikroSens is scalable and can be used to reduce the pixel pitch even further while increasing the array size if necessary for various other low-cost, high volume applications.

Evaluation of the MTF for a-Si:H imaging arrays

NASA Astrophysics Data System (ADS)

Yorkston, John; Antonuk, Larry E.; Seraji, N.; Huang, Weidong; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

1994-05-01

Hydrogenated amorphous silicon imaging arrays are being developed for numerous applications in medical imaging. Diagnostic and megavoltage images have previously been reported and a number of the intrinsic properties of the arrays have been investigated. This paper reports on the first attempt to characterize the intrinsic spatial resolution of the imaging pixels on a 450 micrometers pitch, n-i-p imaging array fabricated at Xerox P.A.R.C. The pre- sampled modulation transfer function was measured by scanning a approximately 25 micrometers wide slit of visible wavelength light across a pixel in both the DATA and FET directions. The results show that the response of the pixel in these orthogonal directions is well described by a simple model that accounts for asymmetries in the pixel response due to geometric aspects of the pixel design.

Development of Thermal Infrared Sensor to Supplement Operational Land Imager

NASA Technical Reports Server (NTRS)

Shu, Peter; Waczynski, Augustyn; Kan, Emily; Wen, Yiting; Rosenberry, Robert

2012-01-01

The thermal infrared sensor (TIRS) is a quantum well infrared photodetector (QWIP)-based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a far-infrared imager operating in the pushbroom mode with two IR channels: 10.8 and 12 m. The focal plane will contain three 640 512 QWIP arrays mounted onto a silicon substrate. The readout integrated circuit (ROIC) addresses each pixel on the QWIP arrays and reads out the pixel value (signal). The ROIC is controlled by the focal plane electronics (FPE) by means of clock signals and bias voltage value. The means of how the FPE is designed to control and interact with the TIRS focal plane assembly (FPA) is the basis for this work. The technology developed under the FPE is for the TIRS focal plane assembly (FPA). The FPE must interact with the FPA to command and control the FPA, extract analog signals from the FPA, and then convert the analog signals to digital format and send them via a serial link (USB) to a computer. The FPE accomplishes the described functions by converting electrical power from generic power supplies to the required bias power that is needed by the FPA. The FPE also generates digital clocking signals and shifts the typical transistor-to-transistor logic (TTL) to }5 V required by the FPA. The FPE also uses an application- specific integrated circuit (ASIC) named System Image, Digitizing, Enhancing, Controlling, And Retrieving (SIDECAR) from Teledyne Corp. to generate the clocking patterns commanded by the user. The uniqueness of the FPE for TIRS lies in that the TIRS FPA has three QWIP detector arrays, and all three detector arrays must be in synchronization while in operation. This is to avoid data skewing while observing Earth flying in space. The observing scenario may be customized by uploading new control software to the SIDECAR.

Multichroic Bolometric Detector Architecture for Cosmic Microwave Background Polarimetry Experiments

NASA Astrophysics Data System (ADS)

Suzuki, Aritoki

Characterization of the Cosmic Microwave Background (CMB) B-mode polarization signal will test models of inflationary cosmology, as well as constrain the sum of the neutrino masses and other cosmological parameters. The low intensity of the B-mode signal combined with the need to remove polarized galactic foregrounds requires a sensitive millimeter receiver and effective methods of foreground removal. Current bolometric detector technology is reaching the sensitivity limit set by the CMB photon noise. Thus, we need to increase the optical throughput to increase an experiment's sensitivity. To increase the throughput without increasing the focal plane size, we can increase the frequency coverage of each pixel. Increased frequency coverage per pixel has additional advantage that we can split the signal into frequency bands to obtain spectral information. The detection of multiple frequency bands allows for removal of the polarized foreground emission from synchrotron radiation and thermal dust emission, by utilizing its spectral dependence. Traditionally, spectral information has been captured with a multi-chroic focal plane consisting of a heterogeneous mix of single-color pixels. To maximize the efficiency of the focal plane area, we developed a multi-chroic pixel. This increases the number of pixels per frequency with same focal plane area. We developed multi-chroic antenna-coupled transition edge sensor (TES) detector array for the CMB polarimetry. In each pixel, a silicon lens-coupled dual polarized sinuous antenna collects light over a two-octave frequency band. The antenna couples the broadband millimeter wave signal into microstrip transmission lines, and on-chip filter banks split the broadband signal into several frequency bands. Separate TES bolometers detect the power in each frequency band and linear polarization. We will describe the design and performance of these devices and present optical data taken with prototype pixels and detector arrays. Our measurements show beams with percent level ellipticity, percent level cross-polarization leakage, and partitioned bands using banks of two and three filters. We will also describe the development of broadband anti-reflection coatings for the high dielectric constant lens. The broadband anti-reflection coating has approximately 100% bandwidth and no detectable loss at cryogenic temperature. We will describe a next generation CMB polarimetry experiment, the POLARBEAR-2, in detail. The POLARBEAR-2 would have focal planes with kilo-pixel of these detectors to achieve high sensitivity. We'll also introduce proposed experiments that would use multi-chroic detector array we developed in this work. We'll conclude by listing out suggestions for future multichroic detector development.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

32 x 16 CMOS smart pixel array for optical interconnects

NASA Astrophysics Data System (ADS)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

Ground truth management system to support multispectral scanner /MSS/ digital analysis

NASA Technical Reports Server (NTRS)

Coiner, J. C.; Ungar, S. G.

1977-01-01

A computerized geographic information system for management of ground truth has been designed and implemented to relate MSS classification results to in situ observations. The ground truth system transforms, generalizes and rectifies ground observations to conform to the pixel size and shape of high resolution MSS aircraft data. These observations can then be aggregated for comparison to lower resolution sensor data. Construction of a digital ground truth array allows direct pixel by pixel comparison between classification results of MSS data and ground truth. By making comparisons, analysts can identify spatial distribution of error within the MSS data as well as usual figures of merit for the classifications. Use of the ground truth system permits investigators to compare a variety of environmental or anthropogenic data, such as soil color or tillage patterns, with classification results and allows direct inclusion of such data into classification operations. To illustrate the system, examples from classification of simulated Thematic Mapper data for agricultural test sites in North Dakota and Kansas are provided.

High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

NASA Astrophysics Data System (ADS)

Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

2016-01-01

State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

Practical Considerations for Optimizing Position Sensitivity in Arrays of Position-sensitive TES's

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Bandler, Simon R.; Figueroa-Feliciano, Encetali; Iyomoto, Naoko; Kelley, Richard L.; Kilbourne, Caroline A.; Porder, Frederick S.; Sadleir, John E.

2007-01-01

We are developing Position-Sensitive Transitions-Edge Sensors (PoST's) for future X-ray astronomy missions such as NASA's Constellation-X. The PoST consists of one or more Transitions Edge Sensors (TES's) thermally connected to a large X-ray absorber, which through heat diffusion, gives rise to position dependence. The development of PoST's is motivated by the desire to achieve the largest the focal-plan coverage with the fewest number of readout channels. In order to develop a practical array, consisting of an inner pixellated core with an outer array of large absorber PoST's, we must be able to simultaneously read out all (-1800) channels in the array. This is achievable using time division multiplexing (TDM), but does set stringent slew rate requirements on the array. Typically, we must damp the pulses to reduce the slew rate of the input signal to the TDM. This is achieved by applying a low-pass analog filter with large inductance to the signal. This attenuates the high frequency components of the signal, essential for position discrimination in PoST's, relative to the white noise of the readout chain and degrades the position sensitivity. Using numerically simulated data, we investigate the position sensing ability of typical PoST designs under such high inductance conditions. We investigate signal-processing techniques for optimal determination of the event position and discuss the practical considerations for real-time implementation.

High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

PubMed

Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

2016-02-01

We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams.

Colorization-Based RGB-White Color Interpolation using Color Filter Array with Randomly Sampled Pattern

PubMed Central

Oh, Paul; Lee, Sukho; Kang, Moon Gi

2017-01-01

Recently, several RGB-White (RGBW) color filter arrays (CFAs) have been proposed, which have extra white (W) pixels in the filter array that are highly sensitive. Due to the high sensitivity, the W pixels have better SNR (Signal to Noise Ratio) characteristics than other color pixels in the filter array, especially, in low light conditions. However, most of the RGBW CFAs are designed so that the acquired RGBW pattern image can be converted into the conventional Bayer pattern image, which is then again converted into the final color image by using conventional demosaicing methods, i.e., color interpolation techniques. In this paper, we propose a new RGBW color filter array based on a totally different color interpolation technique, the colorization algorithm. The colorization algorithm was initially proposed for colorizing a gray image into a color image using a small number of color seeds. Here, we adopt this algorithm as a color interpolation technique, so that the RGBW color filter array can be designed with a very large number of W pixels to make the most of the highly sensitive characteristics of the W channel. The resulting RGBW color filter array has a pattern with a large proportion of W pixels, while the small-numbered RGB pixels are randomly distributed over the array. The colorization algorithm makes it possible to reconstruct the colors from such a small number of RGB values. Due to the large proportion of W pixels, the reconstructed color image has a high SNR value, especially higher than those of conventional CFAs in low light condition. Experimental results show that many important information which are not perceived in color images reconstructed with conventional CFAs are perceived in the images reconstructed with the proposed method. PMID:28657602

Colorization-Based RGB-White Color Interpolation using Color Filter Array with Randomly Sampled Pattern.

PubMed

Oh, Paul; Lee, Sukho; Kang, Moon Gi

2017-06-28

Recently, several RGB-White (RGBW) color filter arrays (CFAs) have been proposed, which have extra white (W) pixels in the filter array that are highly sensitive. Due to the high sensitivity, the W pixels have better SNR (Signal to Noise Ratio) characteristics than other color pixels in the filter array, especially, in low light conditions. However, most of the RGBW CFAs are designed so that the acquired RGBW pattern image can be converted into the conventional Bayer pattern image, which is then again converted into the final color image by using conventional demosaicing methods, i.e., color interpolation techniques. In this paper, we propose a new RGBW color filter array based on a totally different color interpolation technique, the colorization algorithm. The colorization algorithm was initially proposed for colorizing a gray image into a color image using a small number of color seeds. Here, we adopt this algorithm as a color interpolation technique, so that the RGBW color filter array can be designed with a very large number of W pixels to make the most of the highly sensitive characteristics of the W channel. The resulting RGBW color filter array has a pattern with a large proportion of W pixels, while the small-numbered RGB pixels are randomly distributed over the array. The colorization algorithm makes it possible to reconstruct the colors from such a small number of RGB values. Due to the large proportion of W pixels, the reconstructed color image has a high SNR value, especially higher than those of conventional CFAs in low light condition. Experimental results show that many important information which are not perceived in color images reconstructed with conventional CFAs are perceived in the images reconstructed with the proposed method.

Kilopixel X-Ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.;

Large-area, flexible imaging arrays constructed by light-charge organic memories

PubMed Central

Zhang, Lei; Wu, Ti; Guo, Yunlong; Zhao, Yan; Sun, Xiangnan; Wen, Yugeng; Yu, Gui; Liu, Yunqi

2013-01-01

Existing organic imaging circuits, which offer attractive benefits of light weight, low cost and flexibility, are exclusively based on phototransistor or photodiode arrays. One shortcoming of these photo-sensors is that the light signal should keep invariant throughout the whole pixel-addressing and reading process. As a feasible solution, we synthesized a new charge storage molecule and embedded it into a device, which we call light-charge organic memory (LCOM). In LCOM, the functionalities of photo-sensor and non-volatile memory are integrated. Thanks to the deliberate engineering of electronic structure and self-organization process at the interface, 92% of the stored charges, which are linearly controlled by the quantity of light, retain after 20000 s. The stored charges can also be non-destructively read and erased by a simple voltage program. These results pave the way to large-area, flexible imaging circuits and demonstrate a bright future of small molecular materials in non-volatile memory. PMID:23326636

MOCCA: A 4k-Pixel Molecule Camera for the Position- and Energy-Resolving Detection of Neutral Molecule Fragments at CSR

NASA Astrophysics Data System (ADS)

Gamer, L.; Schulz, D.; Enss, C.; Fleischmann, A.; Gastaldo, L.; Kempf, S.; Krantz, C.; Novotný, O.; Schwalm, D.; Wolf, A.

2016-08-01

We present the design of MOCCA, a large-area particle detector that is developed for the position- and energy-resolving detection of neutral molecule fragments produced in electron-ion interactions at the Cryogenic Storage Ring at the Max Planck Institute for Nuclear Physics in Heidelberg. The detector is based on metallic magnetic calorimeters and consists of 4096 particle absorbers covering a total detection area of 44.8 mathrm {mm} × 44.8 mathrm {mm}. Groups of four absorbers are thermally coupled to a common paramagnetic temperature sensor where the strength of the thermal link is different for each absorber. This allows attributing a detector event within this group to the corresponding absorber by discriminating the signal rise times. A novel readout scheme further allows reading out all 1024 temperature sensors that are arranged in a 32 × 32 square array using only 16+16 current-sensing superconducting quantum interference devices. Numerical calculations taking into account a simplified detector model predict an energy resolution of Δ E_mathrm {FWHM} le 80 mathrm {eV} for all pixels of this detector.

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Rigorous Photogrammetric Processing of CHANG'E-1 and CHANG'E-2 Stereo Imagery for Lunar Topographic Mapping

NASA Astrophysics Data System (ADS)

Di, K.; Liu, Y.; Liu, B.; Peng, M.

2012-07-01

Chang'E-1(CE-1) and Chang'E-2(CE-2) are the two lunar orbiters of China's lunar exploration program. Topographic mapping using CE-1 and CE-2 images is of great importance for scientific research as well as for preparation of landing and surface operation of Chang'E-3 lunar rover. In this research, we developed rigorous sensor models of CE-1 and CE-2 CCD cameras based on push-broom imaging principle with interior and exterior orientation parameters. Based on the rigorous sensor model, the 3D coordinate of a ground point in lunar body-fixed (LBF) coordinate system can be calculated by space intersection from the image coordinates of con-jugate points in stereo images, and the image coordinates can be calculated from 3D coordinates by back-projection. Due to uncer-tainties of the orbit and the camera, the back-projected image points are different from the measured points. In order to reduce these inconsistencies and improve precision, we proposed two methods to refine the rigorous sensor model: 1) refining EOPs by correcting the attitude angle bias, 2) refining the interior orientation model by calibration of the relative position of the two linear CCD arrays. Experimental results show that the mean back-projection residuals of CE-1 images are reduced to better than 1/100 pixel by method 1 and the mean back-projection residuals of CE-2 images are reduced from over 20 pixels to 0.02 pixel by method 2. Consequently, high precision DEM (Digital Elevation Model) and DOM (Digital Ortho Map) are automatically generated.

Performance evaluation of an architecture for the characterisation of photo-devices: design, fabrication and test on a CMOS technology

NASA Astrophysics Data System (ADS)

Castillo-Cabrera, G.; García-Lamont, J.; Reyes-Barranca, M. A.; Moreno-Cadenas, J. A.; Escobosa-Echavarría, A.

2011-03-01

In this report, the performance of a particular pixel's architecture is evaluated. It consists mainly of an optical sensor coupled to an amplifier. The circuit contains photoreceptors such as phototransistors and photodiodes. The circuit integrates two main blocks: (a) the pixel architecture, containing four p-channel transistors and a photoreceptor, and (b) a current source for biasing the signal conditioning amplifier. The generated photocurrent is integrated through the gate capacitance of the input p-channel MOS transistor, then converted to voltage and amplified. Both input transistor and current source are implemented as a voltage amplifier having variable gain (between 10dB and 32dB). Considering characterisation purposes, this last fact is relevant since it gives a degree of freedom to the measurement of different kinds of photo-devices and is not limited to either a single operating point of the circuit or one kind and size of photo-sensor. The gain of the amplifier can be adjusted with an external DC power supply that also sets the DC quiescent point of the circuit. Design of the row-select transistor's aspect ratio used in the matrix array is critical for the pixel's amplifier performance. Based on circuit design data such as capacitance magnitude, time and voltage integration, and amplifier gain, characterisation of all the architecture can be readily carried out and evaluated. For the specific technology used in this work, the spectral response of photo-sensors reveals performance differences between phototransistors and photodiodes. Good approximation between simulation and measurement was obtained.

Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

PubMed

Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

2014-11-01

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

Optimal design and critical analysis of a high resolution video plenoptic demonstrator

NASA Astrophysics Data System (ADS)

Drazic, Valter; Sacré, Jean-Jacques; Bertrand, Jérôme; Schubert, Arno; Blondé, Etienne

2011-03-01

A plenoptic camera is a natural multi-view acquisition device also capable of measuring distances by correlating a set of images acquired under different parallaxes. Its single lens and single sensor architecture have two downsides: limited resolution and depth sensitivity. In a very first step and in order to circumvent those shortcomings, we have investigated how the basic design parameters of a plenoptic camera optimize both the resolution of each view and also its depth measuring capability. In a second step, we built a prototype based on a very high resolution Red One® movie camera with an external plenoptic adapter and a relay lens. The prototype delivered 5 video views of 820x410. The main limitation in our prototype is view cross talk due to optical aberrations which reduce the depth accuracy performance. We have simulated some limiting optical aberrations and predicted its impact on the performances of the camera. In addition, we developed adjustment protocols based on a simple pattern and analyzing programs which investigate the view mapping and amount of parallax crosstalk on the sensor on a pixel basis. The results of these developments enabled us to adjust the lenslet array with a sub micrometer precision and to mark the pixels of the sensor where the views do not register properly.

Optimal design and critical analysis of a high-resolution video plenoptic demonstrator

NASA Astrophysics Data System (ADS)

Drazic, Valter; Sacré, Jean-Jacques; Schubert, Arno; Bertrand, Jérôme; Blondé, Etienne

2012-01-01

A plenoptic camera is a natural multiview acquisition device also capable of measuring distances by correlating a set of images acquired under different parallaxes. Its single lens and single sensor architecture have two downsides: limited resolution and limited depth sensitivity. As a first step and in order to circumvent those shortcomings, we investigated how the basic design parameters of a plenoptic camera optimize both the resolution of each view and its depth-measuring capability. In a second step, we built a prototype based on a very high resolution Red One® movie camera with an external plenoptic adapter and a relay lens. The prototype delivered five video views of 820 × 410. The main limitation in our prototype is view crosstalk due to optical aberrations that reduce the depth accuracy performance. We simulated some limiting optical aberrations and predicted their impact on the performance of the camera. In addition, we developed adjustment protocols based on a simple pattern and analysis of programs that investigated the view mapping and amount of parallax crosstalk on the sensor on a pixel basis. The results of these developments enabled us to adjust the lenslet array with a submicrometer precision and to mark the pixels of the sensor where the views do not register properly.

LED characterization for development of on-board calibration unit of CCD-based advanced wide-field sensor camera of Resourcesat-2A

NASA Astrophysics Data System (ADS)

Chatterjee, Abhijit; Verma, Anurag

2016-05-01

The Advanced Wide Field Sensor (AWiFS) camera caters to high temporal resolution requirement of Resourcesat-2A mission with repeativity of 5 days. The AWiFS camera consists of four spectral bands, three in the visible and near IR and one in the short wave infrared. The imaging concept in VNIR bands is based on push broom scanning that uses linear array silicon charge coupled device (CCD) based Focal Plane Array (FPA). On-Board Calibration unit for these CCD based FPAs is used to monitor any degradation in FPA during entire mission life. Four LEDs are operated in constant current mode and 16 different light intensity levels are generated by electronically changing exposure of CCD throughout the calibration cycle. This paper describes experimental setup and characterization results of various flight model visible LEDs (λP=650nm) for development of On-Board Calibration unit of Advanced Wide Field Sensor (AWiFS) camera of RESOURCESAT-2A. Various LED configurations have been studied to meet dynamic range coverage of 6000 pixels silicon CCD based focal plane array from 20% to 60% of saturation during night pass of the satellite to identify degradation of detector elements. The paper also explains comparison of simulation and experimental results of CCD output profile at different LED combinations in constant current mode.

A Chip and Pixel Qualification Methodology on Imaging Sensors

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Petkov, Mihail; Nguyen, Duc N.; Novak, Frank

2004-01-01

This paper presents a qualification methodology on imaging sensors. In addition to overall chip reliability characterization based on sensor s overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity, Fixed Pattern Noise and Photon Response Non-Uniformity, a simulation technique is proposed and used to project pixel reliability. The projected pixel reliability is directly related to imaging quality and provides additional sensor reliability information and performance control.

Method for fabricating pixelated silicon device cells

DOEpatents

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

2015-08-18

A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

Composite x-ray image assembly for large-field digital mammography with one- and two-dimensional positioning of a focal plane array

NASA Technical Reports Server (NTRS)

Halama, G.; McAdoo, J.; Liu, H.

1998-01-01

To demonstrate the feasibility of a novel large-field digital mammography technique, a 1024 x 1024 pixel Loral charge-coupled device (CCD) focal plane array (FPA) was positioned in a mammographic field with one- and two-dimensional scan sequences to obtain 950 x 1800 pixel and 3600 x 3600 pixel composite images, respectively. These experiments verify that precise positioning of FPAs produced seamless composites and that the CCD mosaic concept has potential for high-resolution, large-field imaging. The proposed CCD mosaic concept resembles a checkerboard pattern with spacing left between the CCDs for the driver and readout electronics. To obtain a complete x-ray image, the mosaic must be repositioned four times, with an x-ray exposure at each position. To reduce the patient dose, a lead shield with appropriately patterned holes is placed between the x-ray source and the patient. The high-precision motorized translation stages and the fiber-coupled-scintillating-screen-CCD sensor assembly were placed in the position usually occupied by the film cassette. Because of the high mechanical precision, seamless composites were constructed from the subimages. This paper discusses the positioning, image alignment procedure, and composite image results. The paper only addresses the formation of a seamless composite image from subimages and will not consider the effects of the lead shield, multiple CCDs, or the speed of motion.

III-V infrared research at the Jet Propulsion Laboratory

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Ting, D. Z.; Hill, C. J.; Soibel, A.; Liu, John; Liu, J. K.; Mumolo, J. M.; Keo, S. A.; Nguyen, J.; Bandara, S. V.; Tidrow, M. Z.

2009-08-01

Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.

Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

NASA Astrophysics Data System (ADS)

Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

2017-07-01

We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Shera, Suzanne; Shamo, Denis

1998-01-01

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Development of Fast, Background-Limited Transition-Edge Sensors for the Background-Limited Infrared/Sub-mm Spectrograph (BLISS) for SPICA

NASA Technical Reports Server (NTRS)

Beyer, Andrew D.; Runyan, M. C.; Kenyon, M.; Echternach, P. M .; Chui, T.; Bumble, B.; Bradford, C. M.; Holmes, W. A.; Bock, J. J.

2012-01-01

We report experimental progress toward demonstrating background-limited arrays of membrane-isolated transition-edge sensors (TESs) for the Background Limited Infrared/Sub-mm Spectrograph (BLISS). BLISS is a space-borne instrument with grating spectrometers for wavelengths lambda=35-435 micron and with R=lambda/delta lambda approximately equals 500. The goals for BLISS TESs are: noise equivalent power (NEP) = 5x10 (sup -20) W/Hz(exp 1/2) and response time tau <30ms. We expect background-limited performance from bilayers TESs with T(sub c) = 65mK and G=15fW/K. However, such TESs cannot be operated at 50mK unless stray power on the devices, or dark power P(sub D), is less than 200aW. We describe criteria for measuring P(sub D) that requires accurate knowledge of TC. Ultimately, we fabricated superconducting thermistors from Ir (T(sub c) >= 135mK) and Mo/Cu proximitized bilayers, where T(sub c) is the thermistor transition temperature. We measured the Ir TES arrays in our 50mK adiabatic demagnetization refrigerator test system, which can measure up to eight 1x32 arrays simultaneously using a time-division multiplexer, as well as our single-pixel test system which can measure down to 15mK. In our previous Ir array measurements our best reported performance was NEP=2.5x10(exp -19) W/Hz(sub 1/2) and Tau approximately equals 5ms for straight-beam TESs. In fact, we expected NEP approximately equals 1.5x10(exp -19)?W/Hz(sup 1/2) for meander beam TESs, but did not achieve this previously due to 1/f noise. Here, we detail improvements toward measuring the expected NEP and demonstrate NEP=(1.3+0.2)x10 (sup -19)W/Hz(exp 1/2) in our single-pixel test system and NEP=(1.6+/-0.3)x10(sup -19)W/Hz(sup 1/2) in our array test system.

Self-adaptive calibration for staring infrared sensors

NASA Astrophysics Data System (ADS)

Kendall, William B.; Stocker, Alan D.

1993-10-01

This paper presents a new, self-adaptive technique for the correlation of non-uniformities (fixed-pattern noise) in high-density infrared focal-plane detector arrays. We have developed a new approach to non-uniformity correction in which we use multiple image frames of the scene itself, and take advantage of the aim-point wander caused by jitter, residual tracking errors, or deliberately induced motion. Such wander causes each detector in the array to view multiple scene elements, and each scene element to be viewed by multiple detectors. It is therefore possible to formulate (and solve) a set of simultaneous equations from which correction parameters can be computed for the detectors. We have tested our approach with actual images collected by the ARPA-sponsored MUSIC infrared sensor. For these tests we employed a 60-frame (0.75-second) sequence of terrain images for which an out-of-date calibration was deliberately used. The sensor was aimed at a point on the ground via an operator-assisted tracking system having a maximum aim point wander on the order of ten pixels. With these data, we were able to improve the calibration accuracy by a factor of approximately 100.

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

DOE PAGES

Bubna, M.; Bolla, G.; Bortoletto, D.; ...

2015-08-03

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have beenmore » fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

Solution processed integrated pixel element for an imaging device

NASA Astrophysics Data System (ADS)

Swathi, K.; Narayan, K. S.

2016-09-01

We demonstrate the implementation of a solid state circuit/structure comprising of a high performing polymer field effect transistor (PFET) utilizing an oxide layer in conjunction with a self-assembled monolayer (SAM) as the dielectric and a bulk-heterostructure based organic photodiode as a CMOS-like pixel element for an imaging sensor. Practical usage of functional organic photon detectors requires on chip components for image capture and signal transfer as in the CMOS/CCD architecture rather than simple photodiode arrays in order to increase speed and sensitivity of the sensor. The availability of high performing PFETs with low operating voltage and photodiodes with high sensitivity provides the necessary prerequisite to implement a CMOS type image sensing device structure based on organic electronic devices. Solution processing routes in organic electronics offers relatively facile procedures to integrate these components, combined with unique features of large-area, form factor and multiple optical attributes. We utilize the inherent property of a binary mixture in a blend to phase-separate vertically and create a graded junction for effective photocurrent response. The implemented design enables photocharge generation along with on chip charge to voltage conversion with performance parameters comparable to traditional counterparts. Charge integration analysis for the passive pixel element using 2D TCAD simulations is also presented to evaluate the different processes that take place in the monolithic structure.

A 100 Mfps image sensor for biological applications

NASA Astrophysics Data System (ADS)

Etoh, T. Goji; Shimonomura, Kazuhiro; Nguyen, Anh Quang; Takehara, Kosei; Kamakura, Yoshinari; Goetschalckx, Paul; Haspeslagh, Luc; De Moor, Piet; Dao, Vu Truong Son; Nguyen, Hoang Dung; Hayashi, Naoki; Mitsui, Yo; Inumaru, Hideo

2018-02-01

Two ultrahigh-speed CCD image sensors with different characteristics were fabricated for applications to advanced scientific measurement apparatuses. The sensors are BSI MCG (Backside-illuminated Multi-Collection-Gate) image sensors with multiple collection gates around the center of the front side of each pixel, placed like petals of a flower. One has five collection gates and one drain gate at the center, which can capture consecutive five frames at 100 Mfps with the pixel count of about 600 kpixels (512 x 576 x 2 pixels). In-pixel signal accumulation is possible for repetitive image capture of reproducible events. The target application is FLIM. The other is equipped with four collection gates each connected to an in-situ CCD memory with 305 elements, which enables capture of 1,220 (4 x 305) consecutive images at 50 Mfps. The CCD memory is folded and looped with the first element connected to the last element, which also makes possible the in-pixel signal accumulation. The sensor is a small test sensor with 32 x 32 pixels. The target applications are imaging TOF MS, pulse neutron tomography and dynamic PSP. The paper also briefly explains an expression of the temporal resolution of silicon image sensors theoretically derived by the authors in 2017. It is shown that the image sensor designed based on the theoretical analysis achieves imaging of consecutive frames at the frame interval of 50 ps.

Optimization of Focusing by Strip and Pixel Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burke, G J; White, D A; Thompson, C A

Professor Kevin Webb and students at Purdue University have demonstrated the design of conducting strip and pixel arrays for focusing electromagnetic waves [1, 2]. Their key point was to design structures to focus waves in the near field using full wave modeling and optimization methods for design. Their designs included arrays of conducting strips optimized with a downhill search algorithm and arrays of conducting and dielectric pixels optimized with the iterative direct binary search method. They used a finite element code for modeling. This report documents our attempts to duplicate and verify their results. We have modeled 2D conducting stripsmore » and both conducting and dielectric pixel arrays with moment method and FDTD codes to compare with Webb's results. New designs for strip arrays were developed with optimization by the downhill simplex method with simulated annealing. Strip arrays were optimized to focus an incident plane wave at a point or at two separated points and to switch between focusing points with a change in frequency. We also tried putting a line current source at the focus point for the plane wave to see how it would work as a directive antenna. We have not tried optimizing the conducting or dielectric pixel arrays, but modeled the structures designed by Webb with the moment method and FDTD to compare with the Purdue results.« less

A DUAL-BAND MILLIMETER-WAVE KINETIC INDUCTANCE CAMERA FOR THE IRAM 30 m TELESCOPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monfardini, A.; Benoit, A.; Bideaud, A.

The Neel IRAM KIDs Array (NIKA) is a fully integrated measurement system based on kinetic inductance detectors (KIDs) currently being developed for millimeter wave astronomy. The instrument includes dual-band optics allowing simultaneous imaging at 150 GHz and 220 GHz. The imaging sensors consist of two spatially separated arrays of KIDs. The first array, mounted on the 150 GHz branch, is composed of 144 lumped-element KIDs. The second array (220 GHz) consists of 256 antenna-coupled KIDs. Each of the arrays is sensitive to a single polarization; the band splitting is achieved by using a grid polarizer. The optics and sensors aremore » mounted in a custom dilution cryostat, with an operating temperature of {approx}70 mK. Electronic readout is realized using frequency multiplexing and a transmission line geometry consisting of a coaxial cable connected in series with the sensor array and a low-noise 4 K amplifier. The dual-band NIKA was successfully tested in 2010 October at the Institute for Millimetric Radio Astronomy (IRAM) 30 m telescope at Pico Veleta, Spain, performing in-line with laboratory predictions. An optical NEP was then calculated to be around 2 x 10{sup -16} W Hz{sup -1/2} (at 1 Hz) while under a background loading of approximately 4 pW pixel{sup -1}. This improvement in comparison with a preliminary run (2009) verifies that NIKA is approaching the target sensitivity for photon-noise limited ground-based detectors. Taking advantage of the larger arrays and increased sensitivity, a number of scientifically relevant faint and extended objects were then imaged including the Galactic Center SgrB2 (FIR1), the radio galaxy Cygnus A, and the NGC1068 Seyfert galaxy. These targets were all observed simultaneously in the 150 GHz and 220 GHz atmospheric windows.« less

High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength

NASA Astrophysics Data System (ADS)

Joshi, Abhay; Datta, Shubhashish

2012-06-01

We present 16-element and 32-element lattice-mismatched InGaAs photodiode arrays having a cut-off wavelength of ~2.2 um. Each 100 um × 200 um large pixel of the 32-element array has a capacitance of 2.5 pF at 5 V reverse bias, thereby allowing a RC-limited bandwidth of ~1.3 GHz. At room temperature, each pixel demonstrates a dark current of 25 uA at 5 V reverse bias. Corresponding results for the 16-element array having 200 um × 200 um pixels are also reported. Cooling the photodiode array to 150K is expected to reduce its dark current to < 50 nA per pixel at 5 V reverse bias. Additionally, measurement results of 2-micron single photodiodes having 16 GHz bandwidth and corresponding PIN-TIA photoreceiver having 6 GHz bandwidth are also reported.

Array Technology for Terahertz Imaging

NASA Technical Reports Server (NTRS)

Reck, Theodore; Siles, Jose; Jung, Cecile; Gill, John; Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, Imran; Cooper, Ken

2012-01-01

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

Distance Measurement Error in Time-of-Flight Sensors Due to Shot Noise

PubMed Central

Illade-Quinteiro, Julio; Brea, Víctor M.; López, Paula; Cabello, Diego; Doménech-Asensi, Gines

2015-01-01

Unlike other noise sources, which can be reduced or eliminated by different signal processing techniques, shot noise is an ever-present noise component in any imaging system. In this paper, we present an in-depth study of the impact of shot noise on time-of-flight sensors in terms of the error introduced in the distance estimation. The paper addresses the effect of parameters, such as the size of the photosensor, the background and signal power or the integration time, and the resulting design trade-offs. The study is demonstrated with different numerical examples, which show that, in general, the phase shift determination technique with two background measurements approach is the most suitable for pixel arrays of large resolution. PMID:25723141

1024x1024 Pixel MWIR and LWIR QWIP Focal Plane Arrays and 320x256 MWIR:LWIR Pixel Colocated Simultaneous Dualband QWIP Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, Sumith V.; Liu, John K.; Hill, Cory J.; Rafol, S. B.; Mumolo, Jason M.; Trinh, Joseph T.; Tidrow, M. Z.; Le Van, P. D.

2005-01-01

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NE(Delta)T) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NE(Delta)T of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating-temperatures respectively, with similar optical and background conditions. In addition, we are in the process of developing MWIR and LWIR pixel collocated simultaneously readable dualband QWIP focal plane arrays.

Is flat fielding safe for precision CCD astronomy?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Is flat fielding safe for precision CCD astronomy?

DOE PAGES

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

2017-07-06

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Modeling of high-precision wavefront sensing with new generation of CMT avalanche photodiode infrared detectors.

PubMed

Gousset, Silvère; Petit, Cyril; Michau, Vincent; Fusco, Thierry; Robert, Clelia

2015-12-01

Near-infrared wavefront sensing allows for the enhancement of sky coverage with adaptive optics. The recently developed HgCdTe avalanche photodiode arrays are promising due to their very low detector noise, but still present an imperfect cosmetic that may directly impact real-time wavefront measurements for adaptive optics and thus degrade performance in astronomical applications. We propose here a model of a Shack-Hartmann wavefront measurement in the presence of residual fixed pattern noise and defective pixels. To adjust our models, a fine characterization of such an HgCdTe array, the RAPID sensor, is proposed. The impact of the cosmetic defects on the Shack-Hartmann measurement is assessed through numerical simulations. This study provides both a new insight on the applicability of cadmium mercury telluride (CMT) avalanche photodiodes detectors for astronomical applications and criteria to specify the cosmetic qualities of future arrays.

Computational imaging with a balanced detector.

PubMed

Soldevila, F; Clemente, P; Tajahuerce, E; Uribe-Patarroyo, N; Andrés, P; Lancis, J

2016-06-29

Single-pixel cameras allow to obtain images in a wide range of challenging scenarios, including broad regions of the electromagnetic spectrum and through scattering media. However, there still exist several drawbacks that single-pixel architectures must address, such as acquisition speed and imaging in the presence of ambient light. In this work we introduce balanced detection in combination with simultaneous complementary illumination in a single-pixel camera. This approach enables to acquire information even when the power of the parasite signal is higher than the signal itself. Furthermore, this novel detection scheme increases both the frame rate and the signal-to-noise ratio of the system. By means of a fast digital micromirror device together with a low numerical aperture collecting system, we are able to produce a live-feed video with a resolution of 64 × 64 pixels at 5 Hz. With advanced undersampling techniques, such as compressive sensing, we can acquire information at rates of 25 Hz. By using this strategy, we foresee real-time biological imaging with large area detectors in conditions where array sensors are unable to operate properly, such as infrared imaging and dealing with objects embedded in turbid media.

Computational imaging with a balanced detector

NASA Astrophysics Data System (ADS)

Soldevila, F.; Clemente, P.; Tajahuerce, E.; Uribe-Patarroyo, N.; Andrés, P.; Lancis, J.

2016-06-01

Single-pixel cameras allow to obtain images in a wide range of challenging scenarios, including broad regions of the electromagnetic spectrum and through scattering media. However, there still exist several drawbacks that single-pixel architectures must address, such as acquisition speed and imaging in the presence of ambient light. In this work we introduce balanced detection in combination with simultaneous complementary illumination in a single-pixel camera. This approach enables to acquire information even when the power of the parasite signal is higher than the signal itself. Furthermore, this novel detection scheme increases both the frame rate and the signal-to-noise ratio of the system. By means of a fast digital micromirror device together with a low numerical aperture collecting system, we are able to produce a live-feed video with a resolution of 64 × 64 pixels at 5 Hz. With advanced undersampling techniques, such as compressive sensing, we can acquire information at rates of 25 Hz. By using this strategy, we foresee real-time biological imaging with large area detectors in conditions where array sensors are unable to operate properly, such as infrared imaging and dealing with objects embedded in turbid media.

Computational imaging with a balanced detector

PubMed Central

Soldevila, F.; Clemente, P.; Tajahuerce, E.; Uribe-Patarroyo, N.; Andrés, P.; Lancis, J.

2016-01-01

Single-pixel cameras allow to obtain images in a wide range of challenging scenarios, including broad regions of the electromagnetic spectrum and through scattering media. However, there still exist several drawbacks that single-pixel architectures must address, such as acquisition speed and imaging in the presence of ambient light. In this work we introduce balanced detection in combination with simultaneous complementary illumination in a single-pixel camera. This approach enables to acquire information even when the power of the parasite signal is higher than the signal itself. Furthermore, this novel detection scheme increases both the frame rate and the signal-to-noise ratio of the system. By means of a fast digital micromirror device together with a low numerical aperture collecting system, we are able to produce a live-feed video with a resolution of 64 × 64 pixels at 5 Hz. With advanced undersampling techniques, such as compressive sensing, we can acquire information at rates of 25 Hz. By using this strategy, we foresee real-time biological imaging with large area detectors in conditions where array sensors are unable to operate properly, such as infrared imaging and dealing with objects embedded in turbid media. PMID:27353733

A 400 KHz line rate 2048-pixel stitched SWIR linear array

NASA Astrophysics Data System (ADS)

Anchlia, Ankur; Vinella, Rosa M.; Gielen, Daphne; Wouters, Kristof; Vervenne, Vincent; Hooylaerts, Peter; Deroo, Pieter; Ruythooren, Wouter; De Gaspari, Danny; Das, Jo; Merken, Patrick

2016-05-01

Xenics has developed a family of stitched SWIR long linear arrays that operate up to 400 KHz of line rate. These arrays serve medical and industrial applications that require high line rates as well as space applications that require long linear arrays. The arrays are based on a modular ROIC design concept: modules of 512 pixels are stitched during fabrication to achieve 512, 1024 and 2048 pixel arrays. Each 512-pixel module has its own on-chip digital sequencer, analog readout chain and 4 output buffers. This modular concept enables a long array to run at a high line rates irrespective of the array length, which limits the line rate in a traditional linear array. The ROIC is flip-chipped with InGaAs detector arrays. The FPA has a pixel pitch of 12.5μm and has two pixel flavors: square (12.5μm) and rectangular (250μm). The frontend circuit is based on Capacitive Trans-impedance Amplifier (CTIA) to attain stable detector bias, and good linearity and signal integrity, especially at high speeds. The CTIA has an input auto-zero mechanism that allows to have low detector bias (<20mV). An on-chip Correlated Double Sample (CDS) facilitates removal of CTIA KTC and 1/f noise, and other offsets, achieving low noise performance. There are five gain modes in the FPA giving the full well range from 85Ke- to 40Me-. The measured input referred noise is 35e-rms in the highest gain mode. The FPA operates in Integrate While Read mode and, at a master clock rate of 60MHz and a minimum integration time of 1.4μs, achieves the highest line rate of 400 KHz. In this paper, design details and measurements results are presented in order to demonstrate the array performance.

Fully depleted CMOS pixel sensor development and potential applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudot, J.; Kachel, M.; CNRS, UMR7178, 67037 Strasbourg

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) highmore » resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a low noise figure. Especially, an energy resolution of about 400 eV for 5 keV X-rays was obtained for single pixels. The prototypes have then been exposed to gradually increased fluences of neutrons, from 10{sup 13} to 5x10{sup 14} neq/cm{sup 2}. Again laboratory tests allowed to evaluate the signal over noise persistence on the different pixels implemented. Currently our development mostly targets the detection of soft X-rays, with the ambition to develop a pixel sensor matching counting rates as affordable with hybrid pixel sensors, but with an extended sensitivity to low energy and finer pixel about 25 x 25 μm{sup 2}. The original readout architecture proposed relies on a two tiers chip. The first tier consists of a sensor with a modest dynamic in order to insure low noise performances required by sensitivity. The interconnected second tier chip enhances the read-out speed by introducing massive parallelization. Performances reachable with this strategy combining counting and integration will be detailed. (authors)« less

RVS large format arrays for astronomy

NASA Astrophysics Data System (ADS)

Starr, Barry; Mears, Lynn; Fulk, Chad; Getty, Jonathan; Beuville, Eric; Boe, Raymond; Tracy, Christopher; Corrales, Elizabeth; Kilcoyne, Sean; Vampola, John; Drab, John; Peralta, Richard; Doyle, Christy

2016-07-01

Raytheon Vision Systems (RVS) has a long history of providing state of the art infrared sensor chip assemblies (SCAs) for the astronomical community. This paper will provide an update of RVS capabilities for the community not only for the infrared wavelengths but also in the visible wavelengths as well. Large format infrared detector arrays are now available that meet the demanding requirements of the low background scientific community across the wavelength spectrum. These detector arrays have formats from 1k x 1k to as large as 8k x 8k with pixel sizes ranging from 8 to 27 μm. Focal plane arrays have been demonstrated with a variety of detector materials: SiPiN, HgCdTe, InSb, and Si:As IBC. All of these detector materials have demonstrated low noise and dark current, high quantum efficiency, and excellent uniformity. All can meet the high performance requirements for low-background within the limits of their respective spectral and operating temperature ranges.

Development of N+ in P pixel sensors for a high-luminosity large hadron collider

NASA Astrophysics Data System (ADS)

Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

2014-11-01

Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

Demonstration of 1024x1024 pixel dual-band QWIP focal plane array

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Mumolo, J. M.; Ting, D. Z.; Hill, C. J.; Nguyen, J.; Rafol, S. B.

2010-04-01

QWIPs are well known for their stability, high pixel-pixel uniformity and high pixel operability which are quintessential parameters for large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the mid-wave infrared (MWIR) band extends from 4.4 - 5.1 μm and FWHM of the long-wave infrared (LWIR) band extends from 7.8 - 8.8 μm. Dual-band QWIP detector arrays were hybridized with direct injection 30 μm pixel pitch megapixel dual-band simultaneously readable CMOS read out integrated circuits using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 68K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NE▵T of 27 and 40 mK for MWIR and LWIR bands respectively.

Preliminary investigations of active pixel sensors in Nuclear Medicine imaging

NASA Astrophysics Data System (ADS)

Ott, Robert; Evans, Noel; Evans, Phil; Osmond, J.; Clark, A.; Turchetta, R.

2009-06-01

Three CMOS active pixel sensors have been investigated for their application to Nuclear Medicine imaging. Startracker with 525×525 25 μm square pixels has been coupled via a fibre optic stud to a 2 mm thick segmented CsI(Tl) crystal. Imaging tests were performed using 99mTc sources, which emit 140 keV gamma rays. The system was interfaced to a PC via FPGA-based DAQ and optical link enabling imaging rates of 10 f/s. System noise was measured to be >100e and it was shown that the majority of this noise was fixed pattern in nature. The intrinsic spatial resolution was measured to be ˜80 μm and the system spatial resolution measured with a slit was ˜450 μm. The second sensor, On Pixel Intelligent CMOS (OPIC), had 64×72 40 μm pixels and was used to evaluate noise characteristics and to develop a method of differentiation between fixed pattern and statistical noise. The third sensor, Vanilla, had 520×520 25 μm pixels and a measured system noise of ˜25e. This sensor was coupled directly to the segmented phosphor. Imaging results show that even at this lower level of noise the signal from 140 keV gamma rays is small as the light from the phosphor is spread over a large number of pixels. Suggestions for the 'ideal' sensor are made.

New results on diamond pixel sensors using ATLAS frontend electronics

NASA Astrophysics Data System (ADS)

Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K. K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Riester, J. L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

2003-03-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

Point-spread Function Ramifications and Deconvolution of a Signal Dependent Blur Kernel Due to Interpixel Capacitive Coupling

NASA Astrophysics Data System (ADS)

Donlon, Kevan; Ninkov, Zoran; Baum, Stefi

2018-07-01

Interpixel capacitance (IPC) is a deterministic electronic coupling that results in a portion of the collected signal incident on one pixel of a hybridized detector array being measured in adjacent pixels. Data collected by light sensitive HgCdTe arrays which exhibit this coupling typically goes uncorrected or is corrected by treating the coupling as a fixed point-spread function. Evidence suggests that this IPC coupling is not uniform across different signal and background levels. This variation invalidates assumptions that are key in decoupling techniques such as Wiener Filtering or application of the Lucy–Richardson algorithm. Additionally, the variable IPC results in the point-spread function (PSF) depending upon a star’s signal level relative to the background level, among other parameters. With an IPC ranging from 0.68% to 1.45% over the full well depth of a sensor, as is a reasonable range for the H2RG arrays, the FWHM of the JWSTs NIRCam 405N band is degraded from 2.080 pix (0.″132) as expected from the diffraction pattern to 2.186 pix (0.″142) when the star is just breaching the sensitivity limit of the system. For example, When attempting to use a fixed PSF fitting (e.g., assuming the PSF observed from a bright star in the field) to untangle two sources with a flux ratio of 4:1 and a center to center distance of 3 pixels, flux estimation can be off by upwards of 1.5% with a separation error of 50 millipixels. To deal with this issue an iterative non-stationary method for deconvolution is here proposed, implemented, and evaluated that can account for the signal dependent nature of IPC.

The Detector and Readout Systems of the Micro-X High Resolution Microcalorimeter X-Ray Imaging Rocket

NASA Astrophysics Data System (ADS)

Wikus, P.; Doriese, W. B.; Eckart, M. E.; Adams, J. S.; Bandler, S. R.; Brekosky, R. P.; Chervenak, J. A.; Ewin, A. J.; Figueroa-Feliciano, E.; Finkbeiner, F. M.; Galeazzi, M.; Hilton, G.; Irwin, K. D.; Kelley, R. L.; Kilbourne, C. A.; Leman, S. W.; McCammon, D.; Porter, F. S.; Reintsema, C. D.; Rutherford, J. M.; Trowbridge, S. N.

2009-12-01

The Micro-X sounding rocket experiment will deploy an imaging transition-edge-sensor (TES) microcalorimeter spectrometer to observe astrophysical sources in the 0.2-3.0 keV band. The instrument has been designed at a systems level, and the first items of flight hardware are presently being built. In the first flight, planned for January 2011, the spectrometer will observe a recently discovered Silicon knot in the Puppis-A supernova remnant. Here we describe the design of the Micro-X science instrument, focusing on the instrument's detector and detector assembly. The current design of the 2-dimensional spectrometer array contains 128 close-packed pixels with a pitch of 600 μm. The conically approximated Wolter-1 mirror will map each of these pixels to a 0.95 arcmin region on the sky; the field of view will be 11.4 arcmin. Targeted energy resolution of the TESs is about 2 eV over the full observing band. A SQUID time-division multiplexer (TDM) will read out the array. The detector time constants will be engineered to approximately 2 ms to match the TDM, which samples each pixel at 32.6 kHz, limited only by the telemetry system of the rocket. The detector array and two SQUID stages of the TDM readout system are accommodated in a lightweight Mg enclosure, which is mounted to the 50 mK stage of an adiabatic demagnetization refrigerator. A third SQUID amplification stage is located on the 1.6 K liquid He stage of the cryostat. An on-board 55-Fe source will fluoresce a Ca target, providing 3.69 and 4.01 keV calibration lines that will not interfere with the scientifically interesting energy band.

Structurally Integrated Photoluminescent Chemical and Biological Sensors: An Organic Light-Emitting Diode-Based Platform

NASA Astrophysics Data System (ADS)

Shinar, J.; Shinar, R.

The chapter describes the development, advantages, challenges, and potential of an emerging, compact photoluminescence-based sensing platform for chemical and biological analytes, including multiple analytes. In this platform, the excitation source is an array of organic light-emitting device (OLED) pixels that is structurally integrated with the sensing component. Steps towards advanced integration with additionally a thin-film-based photodetector are also described. The performance of the OLED-based sensing platform is examined for gas-phase and dissolved oxygen, glucose, lactate, ethanol, hydrazine, and anthrax lethal factor.

On DESTINY Science Instrument Electrical and Electronics Subsystem Framework

NASA Technical Reports Server (NTRS)

Kizhner, Semion; Benford, Dominic J.; Lauer, Tod R.

2009-01-01

Future space missions are going to require large focal planes with many sensing arrays and hundreds of millions of pixels all read out at high data rates'' . This will place unique demands on the electrical and electronics (EE) subsystem design and it will be critically important to have high technology readiness level (TRL) EE concepts ready to support such missions. One such omission is the Joint Dark Energy Mission (JDEM) charged with making precise measurements of the expansion rate of the universe to reveal vital clues about the nature of dark energy - a hypothetical form of energy that permeates all of space and tends to increase the rate of the expansion. One of three JDEM concept studies - the Dark Energy Space Telescope (DESTINY) was conducted in 2008 at the NASA's Goddard Space Flight Center (GSFC) in Greenbelt, Maryland. This paper presents the EE subsystem framework, which evolved from the DESTINY science instrument study. It describes the main challenges and implementation concepts related to the design of an EE subsystem featuring multiple focal planes populated with dozens of large arrays and millions of pixels. The focal planes are passively cooled to cryogenic temperatures (below 140 K). The sensor mosaic is controlled by a large number of Readout Integrated Circuits and Application Specific Integrated Circuits - the ROICs/ASICs in near proximity to their sensor focal planes. The ASICs, in turn, are serviced by a set of "warm" EE subsystem boxes performing Field Programmable Gate Array (FPGA) based digital signal processing (DSP) computations of complex algorithms, such as sampling-up-the-ramp algorithm (SUTR), over large volumes of fast data streams. The SUTR boxes are supported by the Instrument Control/Command and Data Handling box (ICDH Primary and Backup boxes) for lossless data compression, command and low volume telemetry handling, power conversion and for communications with the spacecraft. The paper outlines how the JDEM DESTINY concept instrument EE subsystem can be built now, a design; which is generally U.S. Government work not protected by U.S. copyright IEEEAC paper # 1429. Version 4. Updated October 19, 2009 applicable to a wide variety of missions using large focal planes with lar ge mosaics of sensors.

Subpixel mapping and test beam studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS inner detector upgrade

NASA Astrophysics Data System (ADS)

Bisanz, T.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.

2017-08-01

The upgrade to the High Luminosity Large Hadron Collider will increase the instantaneous luminosity by more than a factor of 5, thus creating significant challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives to the well-established hybrid design using passive sensors since they allow for smaller pixel sizes and cost effective production. This article presents studies of a high-voltage CMOS active pixel sensor designed for the ATLAS tracker upgrade. The sensor is glued to the read-out chip of the Insertable B-Layer, forming a capacitively coupled pixel detector. The pixel pitch of the device under test is 33× 125 μm2, while the pixels of the read-out chip have a pitch of 50× 250 μm2. Three pixels of the CMOS device are connected to one read-out pixel, the information of which of these subpixels is hit is encoded in the amplitude of the output signal (subpixel encoding). Test beam measurements are presented that demonstrate the usability of this subpixel encoding scheme.

The charge pump PLL clock generator designed for the 1.56 ns bin size time-to-digital converter pixel array of the Timepix3 readout ASIC

NASA Astrophysics Data System (ADS)

Fu, Y.; Brezina, C.; Desch, K.; Poikela, T.; Llopart, X.; Campbell, M.; Massimiliano, D.; Gromov, V.; Kluit, R.; van Beauzekom, M.; Zappon, F.; Zivkovic, V.

2014-01-01

Timepix3 is a newly developed pixel readout chip which is expected to be operated in a wide range of gaseous and silicon detectors. It is made of 256 × 256 pixels organized in a square pixel-array with 55 μm pitch. Oscillators running at 640 MHz are distributed across the pixel-array and allow for a highly accurate measurement of the arrival time of a hit. This paper concentrates on a low-jitter phase locked loop (PLL) that is located in the chip periphery. This PLL provides a control voltage which regulates the actual frequency of the individual oscillators, allowing for compensation of process, voltage, and temperature variations.

Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging

PubMed Central

Muir, Ryan D.; Pogranichney, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

2014-01-01

Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment. PMID:25178010

Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging.

PubMed

Muir, Ryan D; Pogranichney, Nicholas R; Muir, J Lewis; Sullivan, Shane Z; Battaile, Kevin P; Mulichak, Anne M; Toth, Scott J; Keefe, Lisa J; Simpson, Garth J

2014-09-01

Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment.

Experimental realization of a metamaterial detector focal plane array.

PubMed

Shrekenhamer, David; Xu, Wangren; Venkatesh, Suresh; Schurig, David; Sonkusale, Sameer; Padilla, Willie J

2012-10-26

We present a metamaterial absorber detector array that enables room-temperature, narrow-band detection of gigahertz (GHz) radiation in the S band (2-4 GHz). The system is implemented in a commercial printed circuit board process and we characterize the detector sensitivity and angular dependence. A modified metamaterial absorber geometry allows for each unit cell to act as an isolated detector pixel and to collectively form a focal plane array . Each pixel can have a dedicated microwave receiver chain and functions together as a hybrid device tuned to maximize the efficiency of detected power. The demonstrated subwavelength pixel shows detected sensitivity of -77 dBm, corresponding to a radiation power density of 27 nW/m(2), with pixel to pixel coupling interference below -14 dB at 2.5 GHz.

Luminance compensation for AMOLED displays using integrated MIS sensors

NASA Astrophysics Data System (ADS)

Vygranenko, Yuri; Fernandes, Miguel; Louro, Paula; Vieira, Manuela

2017-05-01

Active-matrix organic light-emitting diodes (AMOLEDs) are ideal for future TV applications due to their ability to faithfully reproduce real images. However, pixel luminance can be affected by instability of driver TFTs and aging effect in OLEDs. This paper reports on a pixel driver utilizing a metal-insulator-semiconductor (MIS) sensor for luminance control of the OLED element. In the proposed pixel architecture for bottom-emission AMOLEDs, the embedded MIS sensor shares the same layer stack with back-channel etched a Si:H TFTs to maintain the fabrication simplicity. The pixel design for a large-area HD display is presented. The external electronics performs image processing to modify incoming video using correction parameters for each pixel in the backplane, and also sensor data processing to update the correction parameters. The luminance adjusting algorithm is based on realistic models for pixel circuit elements to predict the relation between the programming voltage and OLED luminance. SPICE modeling of the sensing part of the backplane is performed to demonstrate its feasibility. Details on the pixel circuit functionality including the sensing and programming operations are also discussed.

Infrared retina

DOEpatents

Krishna, Sanjay [Albuquerque, NM; Hayat, Majeed M [Albuquerque, NM; Tyo, J Scott [Tucson, AZ; Jang, Woo-Yong [Albuquerque, NM

2011-12-06

Exemplary embodiments provide an infrared (IR) retinal system and method for making and using the IR retinal system. The IR retinal system can include adaptive sensor elements, whose properties including, e.g., spectral response, signal-to-noise ratio, polarization, or amplitude can be tailored at pixel level by changing the applied bias voltage across the detector. "Color" imagery can be obtained from the IR retinal system by using a single focal plane array. The IR sensor elements can be spectrally, spatially and temporally adaptive using quantum-confined transitions in nanoscale quantum dots. The IR sensor elements can be used as building blocks of an infrared retina, similar to cones of human retina, and can be designed to work in the long-wave infrared portion of the electromagnetic spectrum ranging from about 8 .mu.m to about 12 .mu.m as well as the mid-wave portion ranging from about 3 .mu.m to about 5 .mu.m.

Smart trigger logic for focal plane arrays

DOEpatents

Levy, James E; Campbell, David V; Holmes, Michael L; Lovejoy, Robert; Wojciechowski, Kenneth; Kay, Randolph R; Cavanaugh, William S; Gurrieri, Thomas M

2014-03-25

An electronic device includes a memory configured to receive data representing light intensity values from pixels in a focal plane array and a processor that analyzes the received data to determine which light values correspond to triggered pixels, where the triggered pixels are those pixels that meet a predefined set of criteria, and determines, for each triggered pixel, a set of neighbor pixels for which light intensity values are to be stored. The electronic device also includes a buffer that temporarily stores light intensity values for at least one previously processed row of pixels, so that when a triggered pixel is identified in a current row, light intensity values for the neighbor pixels in the previously processed row and for the triggered pixel are persistently stored, as well as a data transmitter that transmits the persistently stored light intensity values for the triggered and neighbor pixels to a data receiver.

Self-similar grid patterns in free-space shuffle-exchange networks

NASA Astrophysics Data System (ADS)

Haney, Michael W.

1993-12-01

Self-similar grid patterns are proposed as an alternative to rectangular grid, array optoelectronic sources, and detectors of smart pixels. For shuffle based multistage interconnection networks, it is suggested that smart pixel should not be arrayed on a rectangular grid and that smart pixel unit cell should be the kernel of a self-similar grid pattern.

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

Method and apparatus for detection of charge on ions and particles

DOEpatents

Fuerstenau, Stephen Douglas; Soli, George Arthur

2002-01-01

The present invention provides a tessellated array detector with charge collecting plate (or cup) electrode pixels and amplifying circuitry integrated into each pixel making it sensitive to external electrostatic charge; a micro collector/amplifier pixel design possessing a small capacitance to ensure a high charge to voltage signal conversion for low noise/high sensitivity operation; a micro-fabricated array of such pixels to create a useful macroscopic target area for ion and charged particle collection.

High resistivity CMOS pixel sensors and their application to the STAR PXL detector

NASA Astrophysics Data System (ADS)

Dorokhov, A.; Bertolone, G.; Baudot, J.; Colledani, C.; Claus, G.; Degerli, Y.; de Masi, R.; Deveaux, M.; Dozière, G.; Dulinski, W.; Gélin, M.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.; Voutsinas, G.; Winter, M.

2011-09-01

CMOS pixel sensors are foreseen to equip the vertex detector (called PXL) of the upgraded inner tracking system of the STAR experiment at RHIC. The sensors (called ULTIMATE) are being designed and their architecture is being optimized for the PXL specifications, extrapolating from the MIMOSA-26 sensor realized for the EUDET beam telescope.The paper gives an overview of the ULTIMATE sensor specifications and of the adaptation of its forerunner, MIMOSA-26, to the PXL specifications.One of the main changes between MIMOSA-26 and ULTIMATE is the use of a high resistivity epitaxial layer. Recent performance assessments obtained with MIMOSA-26 sensors manufactured on such an epitaxial layer are presented, as well as results of beam tests obtained with a prototype probing improved versions of the MIMOSA-26 pixel design. They show drastic improvements of the pixel signal-to-noise ratio and of the sensor radiation tolerance with respect to the performances achieved with a standard, i.e. low resistivity, layer.

Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

NASA Technical Reports Server (NTRS)

Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

2003-01-01

As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to