Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Sheu, Bing J.; Venus, Holger; Sandau, Rainer

1997-01-01

A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.

A CMOS image sensor with programmable pixel-level analog processing.

PubMed

Massari, Nicola; Gottardi, Massimo; Gonzo, Lorenzo; Stoppa, David; Simoni, Andrea

2005-11-01

A prototype of a 34 x 34 pixel image sensor, implementing real-time analog image processing, is presented. Edge detection, motion detection, image amplification, and dynamic-range boosting are executed at pixel level by means of a highly interconnected pixel architecture based on the absolute value of the difference among neighbor pixels. The analog operations are performed over a kernel of 3 x 3 pixels. The square pixel, consisting of 30 transistors, has a pitch of 35 microm with a fill-factor of 20%. The chip was fabricated in a 0.35 microm CMOS technology, and its power consumption is 6 mW with 3.3 V power supply. The device was fully characterized and achieves a dynamic range of 50 dB with a light power density of 150 nW/mm2 and a frame rate of 30 frame/s. The measured fixed pattern noise corresponds to 1.1% of the saturation level. The sensor's dynamic range can be extended up to 96 dB using the double-sampling technique.

A new 9T global shutter pixel with CDS technique

NASA Astrophysics Data System (ADS)

Liu, Yang; Ma, Cheng; Zhou, Quan; Wang, Xinyang

2015-04-01

Benefiting from motion blur free, Global shutter pixel is very widely used in the design of CMOS image sensors for high speed applications such as motion vision, scientifically inspection, etc. In global shutter sensors, all pixel signal information needs to be stored in the pixel first and then waiting for readout. For higher frame rate, we need very fast operation of the pixel array. There are basically two ways for the in pixel signal storage, one is in charge domain, such as the one shown in [1], this needs complicated process during the pixel fabrication. The other one is in voltage domain, one example is the one in [2], this pixel is based on the 4T PPD technology and normally the driving of the high capacitive transfer gate limits the speed of the array operation. In this paper we report a new 9T global shutter pixel based on 3-T partially pinned photodiode (PPPD) technology. It incorporates three in-pixel storage capacitors allowing for correlated double sampling (CDS) and pipeline operation of the array (pixel exposure during the readout of the array). Only two control pulses are needed for all the pixels at the end of exposure which allows high speed exposure control.

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

Evaluating video digitizer errors

NASA Astrophysics Data System (ADS)

Peterson, C.

2016-01-01

Analog output video cameras remain popular for recording meteor data. Although these cameras uniformly employ electronic detectors with fixed pixel arrays, the digitization process requires resampling the horizontal lines as they are output in order to reconstruct the pixel data, usually resulting in a new data array of different horizontal dimensions than the native sensor. Pixel timing is not provided by the camera, and must be reconstructed based on line sync information embedded in the analog video signal. Using a technique based on hot pixels, I present evidence that jitter, sync detection, and other timing errors introduce both position and intensity errors which are not present in cameras which internally digitize their sensors and output the digital data directly.

Development of pixellated Ir-TESs

NASA Astrophysics Data System (ADS)

Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Damayanthi, Rathnayaka M. T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

2006-04-01

We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μm×45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES.

A high efficiency readout architecture for a large matrix of pixels.

NASA Astrophysics Data System (ADS)

Gabrielli, A.; Giorgi, F.; Villa, M.

2010-07-01

In this work we present a fast readout architecture for silicon pixel matrix sensors that has been designed to sustain very high rates, above 1 MHz/mm2 for matrices greater than 80k pixels. This logic can be implemented within MAPS (Monolithic Active Pixel Sensors), a kind of high resolution sensor that integrates on the same bulk the sensor matrix and the CMOS logic for readout, but it can be exploited also with other technologies. The proposed architecture is based on three main concepts. First of all, the readout of the hits is performed by activating one column at a time; all the fired pixels on the active column are read, sparsified and reset in parallel in one clock cycle. This implies the use of global signals across the sensor matrix. The consequent reduction of metal interconnections improves the active area while maintaining a high granularity (down to a pixel pitch of 40 μm). Secondly, the activation for readout takes place only for those columns overlapping with a certain fired area, thus reducing the sweeping time of the whole matrix and reducing the pixel dead-time. Third, the sparsification (x-y address labeling of the hits) is performed with a lower granularity with respect to single pixels, by addressing vertical zones of 8 pixels each. The fine-grain Y resolution is achieved by appending the zone pattern to the zone address of a hit. We show then the benefits of this technique in presence of clusters. We describe this architecture from a schematic point of view, then presenting the efficiency results obtained by VHDL simulations.

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

PubMed

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-12

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

PubMed Central

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-01

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

Polarization-Analyzing CMOS Image Sensor With Monolithically Embedded Polarizer for Microchemistry Systems.

PubMed

Tokuda, T; Yamada, H; Sasagawa, K; Ohta, J

2009-10-01

This paper proposes and demonstrates a polarization-analyzing CMOS sensor based on image sensor architecture. The sensor was designed targeting applications for chiral analysis in a microchemistry system. The sensor features a monolithically embedded polarizer. Embedded polarizers with different angles were implemented to realize a real-time absolute measurement of the incident polarization angle. Although the pixel-level performance was confirmed to be limited, estimation schemes based on the variation of the polarizer angle provided a promising performance for real-time polarization measurements. An estimation scheme using 180 pixels in a 1deg step provided an estimation accuracy of 0.04deg. Polarimetric measurements of chiral solutions were also successfully performed to demonstrate the applicability of the sensor to optical chiral analysis.

Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

NASA Astrophysics Data System (ADS)

Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

2012-10-01

In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

Low noise WDR ROIC for InGaAs SWIR image sensor

NASA Astrophysics Data System (ADS)

Ni, Yang

2017-11-01

Hybridized image sensors are actually the only solution for image sensing beyond the spectral response of silicon devices. By hybridization, we can combine the best sensing material and photo-detector design with high performance CMOS readout circuitry. In the infrared band, we are facing typically 2 configurations: high background situation and low background situation. The performance of high background sensors are conditioned mainly by the integration capacity in each pixel which is the case for mid-wave and long-wave infrared detectors. For low background situation, the detector's performance is mainly limited by the pixel's noise performance which is conditioned by dark signal and readout noise. In the case of reflection based imaging condition, the pixel's dynamic range is also an important parameter. This is the case for SWIR band imaging. We are particularly interested by InGaAs based SWIR image sensors.

A Novel Multi-Aperture Based Sun Sensor Based on a Fast Multi-Point MEANSHIFT (FMMS) Algorithm

PubMed Central

You, Zheng; Sun, Jian; Xing, Fei; Zhang, Gao-Fei

2011-01-01

With the current increased widespread interest in the development and applications of micro/nanosatellites, it was found that we needed to design a small high accuracy satellite attitude determination system, because the star trackers widely used in large satellites are large and heavy, and therefore not suitable for installation on micro/nanosatellites. A Sun sensor + magnetometer is proven to be a better alternative, but the conventional sun sensor has low accuracy, and cannot meet the requirements of the attitude determination systems of micro/nanosatellites, so the development of a small high accuracy sun sensor with high reliability is very significant. This paper presents a multi-aperture based sun sensor, which is composed of a micro-electro-mechanical system (MEMS) mask with 36 apertures and an active pixels sensor (APS) CMOS placed below the mask at a certain distance. A novel fast multi-point MEANSHIFT (FMMS) algorithm is proposed to improve the accuracy and reliability, the two key performance features, of an APS sun sensor. When the sunlight illuminates the sensor, a sun spot array image is formed on the APS detector. Then the sun angles can be derived by analyzing the aperture image location on the detector via the FMMS algorithm. With this system, the centroid accuracy of the sun image can reach 0.01 pixels, without increasing the weight and power consumption, even when some missing apertures and bad pixels appear on the detector due to aging of the devices and operation in a harsh space environment, while the pointing accuracy of the single-aperture sun sensor using the conventional correlation algorithm is only 0.05 pixels. PMID:22163770

ALPIDE, the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Mager, M.; ALICE Collaboration

2016-07-01

A new 10 m2 inner tracking system based on seven concentric layers of Monolithic Active Pixel Sensors will be installed in the ALICE experiment during the second long shutdown of LHC in 2019-2020. The monolithic pixel sensors will be fabricated in the 180 nm CMOS Imaging Sensor process of TowerJazz. The ALPIDE design takes full advantage of a particular process feature, the deep p-well, which allows for full CMOS circuitry within the pixel matrix, while at the same time retaining the full charge collection efficiency. Together with the small feature size and the availability of six metal layers, this allowed a continuously active low-power front-end to be placed into each pixel and an in-matrix sparsification circuit to be used that sends only the addresses of hit pixels to the periphery. This approach led to a power consumption of less than 40 mWcm-2, a spatial resolution of around 5 μm, a peaking time of around 2 μs, while being radiation hard to some 1013 1 MeVneq /cm2, fulfilling or exceeding the ALICE requirements. Over the last years of R & D, several prototype circuits have been used to verify radiation hardness, and to optimize pixel geometry and in-pixel front-end circuitry. The positive results led to a submission of full-scale (3 cm×1.5 cm) sensor prototypes in 2014. They are being characterized in a comprehensive campaign that also involves several irradiation and beam tests. A summary of the results obtained and prospects towards the final sensor to instrument the ALICE Inner Tracking System are given.

The FoCal prototype—an extremely fine-grained electromagnetic calorimeter using CMOS pixel sensors

NASA Astrophysics Data System (ADS)

de Haas, A. P.; Nooren, G.; Peitzmann, T.; Reicher, M.; Rocco, E.; Röhrich, D.; Ullaland, K.; van den Brink, A.; van Leeuwen, M.; Wang, H.; Yang, S.; Zhang, C.

2018-01-01

A prototype of a Si-W EM calorimeter was built with Monolithic Active Pixel Sensors as the active elements. With a pixel size of 30 μm it allows digital calorimetry, i.e. the particle's energy is determined by counting pixels, not by measuring the energy deposited. Although of modest size, with a width of only four Moliere radii, it has 39 million pixels. In this article the construction and tuning of the prototype is described. Results from beam tests are compared with predictions of GEANT-based Monte Carlo simulations. The shape of showers caused by electrons is shown in unprecedented detail. Results for energy and position resolution are also given.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

NASA Astrophysics Data System (ADS)

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

2018-02-01

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1-MeV- neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

Transparent Fingerprint Sensor System for Large Flat Panel Display.

PubMed

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk; Lee, Myunghee

2018-01-19

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger's ridges and valleys through the fingerprint sensor array.

Transparent Fingerprint Sensor System for Large Flat Panel Display

PubMed Central

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk

2018-01-01

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger’s ridges and valleys through the fingerprint sensor array. PMID:29351218

A 4MP high-dynamic-range, low-noise CMOS image sensor

NASA Astrophysics Data System (ADS)

Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

2015-03-01

In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

Fully depleted CMOS pixel sensor development and potential applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudot, J.; Kachel, M.; CNRS, UMR7178, 67037 Strasbourg

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) highmore » resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a low noise figure. Especially, an energy resolution of about 400 eV for 5 keV X-rays was obtained for single pixels. The prototypes have then been exposed to gradually increased fluences of neutrons, from 10{sup 13} to 5x10{sup 14} neq/cm{sup 2}. Again laboratory tests allowed to evaluate the signal over noise persistence on the different pixels implemented. Currently our development mostly targets the detection of soft X-rays, with the ambition to develop a pixel sensor matching counting rates as affordable with hybrid pixel sensors, but with an extended sensitivity to low energy and finer pixel about 25 x 25 μm{sup 2}. The original readout architecture proposed relies on a two tiers chip. The first tier consists of a sensor with a modest dynamic in order to insure low noise performances required by sensitivity. The interconnected second tier chip enhances the read-out speed by introducing massive parallelization. Performances reachable with this strategy combining counting and integration will be detailed. (authors)« less

Low-power priority Address-Encoder and Reset-Decoder data-driven readout for Monolithic Active Pixel Sensors for tracker system

NASA Astrophysics Data System (ADS)

Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.

2015-06-01

Active Pixel Sensors used in High Energy Particle Physics require low power consumption to reduce the detector material budget, low integration time to reduce the possibilities of pile-up and fast readout to improve the detector data capability. To satisfy these requirements, a novel Address-Encoder and Reset-Decoder (AERD) asynchronous circuit for a fast readout of a pixel matrix has been developed. The AERD data-driven readout architecture operates the address encoding and reset decoding based on an arbitration tree, and allows us to readout only the hit pixels. Compared to the traditional readout structure of the rolling shutter scheme in Monolithic Active Pixel Sensors (MAPS), AERD can achieve a low readout time and a low power consumption especially for low hit occupancies. The readout is controlled at the chip periphery with a signal synchronous with the clock, allows a good digital and analogue signal separation in the matrix and a reduction of the power consumption. The AERD circuit has been implemented in the TowerJazz 180 nm CMOS Imaging Sensor (CIS) process with full complementary CMOS logic in the pixel. It works at 10 MHz with a matrix height of 15 mm. The energy consumed to read out one pixel is around 72 pJ. A scheme to boost the readout speed to 40 MHz is also discussed. The sensor chip equipped with AERD has been produced and characterised. Test results including electrical beam measurement are presented.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

PubMed Central

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass.

PubMed

Han, Guoliang; Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-11-14

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0 . 15 ∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation.

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass

PubMed Central

Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-01-01

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0.15∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation. PMID:29135927

Smartphone Based Platform for Colorimetric Sensing of Dyes

NASA Astrophysics Data System (ADS)

Dutta, Sibasish; Nath, Pabitra

We demonstrate the working of a smartphone based optical sensor for measuring absorption band of coloured dyes. By integration of simple laboratory optical components with the camera unit of the smartphone we have converted it into a visible spectrometer with a pixel resolution of 0.345 nm/pixel. Light from a broadband optical source is allowed to transmit through a specific dye solution. The transmitted light signal is captured by the camera of the smartphone. The present sensor is inexpensive, portable and light weight making it an ideal handy sensor suitable for different on-field sensing.

CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

PubMed

Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

2010-12-01

We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system

NASA Astrophysics Data System (ADS)

Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Giubilato, P.; Hillemanns, H.; Junique, A.; Keil, M.; Kim, D.; Kim, J.; Kugathasan, T.; Lattuca, A.; Mager, M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mattiazzo, S.; Mazza, G.; Mugnier, H.; Musa, L.; Pantano, D.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Siddhanta, S.; Snoeys, W.; Usai, G.; van Hoorne, J. W.; Yang, P.; Yi, J.

2013-12-01

ALICE plans an upgrade of its Inner Tracking System for 2018. The development of a monolithic active pixel sensor for this upgrade is described. The TowerJazz 180 nm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel due to the offering of a deep pwell and also to use different starting materials. The ALPIDE development is an alternative to approaches based on a rolling shutter architecture, and aims to reduce power consumption and integration time by an order of magnitude below the ALICE specifications, which would be quite beneficial in terms of material budget and background. The approach is based on an in-pixel binary front-end combined with a hit-driven architecture. Several prototypes have already been designed, submitted for fabrication and some of them tested with X-ray sources and particles in a beam. Analog power consumption has been limited by optimizing the Q/C of the sensor using Explorer chips. Promising but preliminary first results have also been obtained with a prototype ALPIDE. Radiation tolerance up to the ALICE requirements has also been verified.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE PAGES

Benoit, M.; Braccini, S.; Casse, G.; ...

2018-02-08

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; Braccini, S.; Casse, G.

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

PubMed

Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

2013-06-01

We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration.

A robust color signal processing with wide dynamic range WRGB CMOS image sensor

NASA Astrophysics Data System (ADS)

Kawada, Shun; Kuroda, Rihito; Sugawa, Shigetoshi

2011-01-01

We have developed a robust color reproduction methodology by a simple calculation with a new color matrix using the formerly developed wide dynamic range WRGB lateral overflow integration capacitor (LOFIC) CMOS image sensor. The image sensor was fabricated through a 0.18 μm CMOS technology and has a 45 degrees oblique pixel array, the 4.2 μm effective pixel pitch and the W pixels. A W pixel was formed by replacing one of the two G pixels in the Bayer RGB color filter. The W pixel has a high sensitivity through the visible light waveband. An emerald green and yellow (EGY) signal is generated from the difference between the W signal and the sum of RGB signals. This EGY signal mainly includes emerald green and yellow lights. These colors are difficult to be reproduced accurately by the conventional simple linear matrix because their wave lengths are in the valleys of the spectral sensitivity characteristics of the RGB pixels. A new linear matrix based on the EGY-RGB signal was developed. Using this simple matrix, a highly accurate color processing with a large margin to the sensitivity fluctuation and noise has been achieved.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors.

PubMed

Ge, Xiaoliang; Theuwissen, Albert J P

2018-02-27

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors †

PubMed Central

Theuwissen, Albert J. P.

2018-01-01

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models. PMID:29495496

Crosstalk quantification, analysis, and trends in CMOS image sensors.

PubMed

Blockstein, Lior; Yadid-Pecht, Orly

2010-08-20

Pixel crosstalk (CTK) consists of three components, optical CTK (OCTK), electrical CTK (ECTK), and spectral CTK (SCTK). The CTK has been classified into two groups: pixel-architecture dependent and pixel-architecture independent. The pixel-architecture-dependent CTK (PADC) consists of the sum of two CTK components, i.e., the OCTK and the ECTK. This work presents a short summary of a large variety of methods for PADC reduction. Following that, this work suggests a clear quantifiable definition of PADC. Three complementary metal-oxide-semiconductor (CMOS) image sensors based on different technologies were empirically measured, using a unique scanning technology, the S-cube. The PADC is analyzed, and technology trends are shown.

Using polynomials to simplify fixed pattern noise and photometric correction of logarithmic CMOS image sensors.

PubMed

Li, Jing; Mahmoodi, Alireza; Joseph, Dileepan

2015-10-16

An important class of complementary metal-oxide-semiconductor (CMOS) image sensors are those where pixel responses are monotonic nonlinear functions of light stimuli. This class includes various logarithmic architectures, which are easily capable of wide dynamic range imaging, at video rates, but which are vulnerable to image quality issues. To minimize fixed pattern noise (FPN) and maximize photometric accuracy, pixel responses must be calibrated and corrected due to mismatch and process variation during fabrication. Unlike literature approaches, which employ circuit-based models of varying complexity, this paper introduces a novel approach based on low-degree polynomials. Although each pixel may have a highly nonlinear response, an approximately-linear FPN calibration is possible by exploiting the monotonic nature of imaging. Moreover, FPN correction requires only arithmetic, and an optimal fixed-point implementation is readily derived, subject to a user-specified number of bits per pixel. Using a monotonic spline, involving cubic polynomials, photometric calibration is also possible without a circuit-based model, and fixed-point photometric correction requires only a look-up table. The approach is experimentally validated with a logarithmic CMOS image sensor and is compared to a leading approach from the literature. The novel approach proves effective and efficient.

1024-Pixel CMOS Multimodality Joint Cellular Sensor/Stimulator Array for Real-Time Holistic Cellular Characterization and Cell-Based Drug Screening.

PubMed

Park, Jong Seok; Aziz, Moez Karim; Li, Sensen; Chi, Taiyun; Grijalva, Sandra Ivonne; Sung, Jung Hoon; Cho, Hee Cheol; Wang, Hua

2018-02-01

This paper presents a fully integrated CMOS multimodality joint sensor/stimulator array with 1024 pixels for real-time holistic cellular characterization and drug screening. The proposed system consists of four pixel groups and four parallel signal-conditioning blocks. Every pixel group contains 16 × 16 pixels, and each pixel includes one gold-plated electrode, four photodiodes, and in-pixel circuits, within a pixel footprint. Each pixel supports real-time extracellular potential recording, optical detection, charge-balanced biphasic current stimulation, and cellular impedance measurement for the same cellular sample. The proposed system is fabricated in a standard 130-nm CMOS process. Rat cardiomyocytes are successfully cultured on-chip. Measured high-resolution optical opacity images, extracellular potential recordings, biphasic current stimulations, and cellular impedance images demonstrate the unique advantages of the system for holistic cell characterization and drug screening. Furthermore, this paper demonstrates the use of optical detection on the on-chip cultured cardiomyocytes to real-time track their cyclic beating pattern and beating rate.

Assessment of the short-term radiometric stability between Terra MODIS and Landsat 7 ETM+ sensors

USGS Publications Warehouse

Choi, Taeyoung; Xiong, Xiaoxiong; Chander, Gyanesh; Angal, A.

2009-01-01

Short-term radiometric stability was evaluated using continuous ETM+ scenes within a single orbit (contact period) and the corresponding MODIS scenes for the four matching solar reflective visible and near-infrared (VNIR) band pairs between the two sensors. The near-simultaneous earth observations were limited by the smaller swath size of ETM+ (183 km) compared to MODIS (2330 km). Two sets of continuous granules for Terra MODIS and Landsat 7 ETM+ were selected and mosaicked based on pixel geolocation information for noncloudy pixels over the African continent. The matching pixel pairs were resampled from a fine to a coarse pixel resolution, and the at-sensor spectral radiance values for a wide dynamic range of the sensors were compared and analyzed, covering various surface types. The following study focuses on radiometric stability analysis from the VNIR band-pairs of ETM+ and MODIS. The Libya-4 desert target was included in the path of this continuous orbit, which served as a verification point between the short-term and the long-term trending results from previous studies. MODTRAN at-sensor spectral radiance simulation is included for a representative desert surface type to evaluate the consistency of the results.

Dual cameras acquisition and display system of retina-like sensor camera and rectangular sensor camera

NASA Astrophysics Data System (ADS)

Cao, Nan; Cao, Fengmei; Lin, Yabin; Bai, Tingzhu; Song, Shengyu

2015-04-01

For a new kind of retina-like senor camera and a traditional rectangular sensor camera, dual cameras acquisition and display system need to be built. We introduce the principle and the development of retina-like senor. Image coordinates transformation and interpolation based on sub-pixel interpolation need to be realized for our retina-like sensor's special pixels distribution. The hardware platform is composed of retina-like senor camera, rectangular sensor camera, image grabber and PC. Combined the MIL and OpenCV library, the software program is composed in VC++ on VS 2010. Experience results show that the system can realizes two cameras' acquisition and display.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE PAGES

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.; ...

2016-07-21

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

NASA Astrophysics Data System (ADS)

Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

2015-04-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

Smart CMOS image sensor for lightning detection and imaging.

PubMed

Rolando, Sébastien; Goiffon, Vincent; Magnan, Pierre; Corbière, Franck; Molina, Romain; Tulet, Michel; Bréart-de-Boisanger, Michel; Saint-Pé, Olivier; Guiry, Saïprasad; Larnaudie, Franck; Leone, Bruno; Perez-Cuevas, Leticia; Zayer, Igor

2013-03-01

We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach.

Microlens performance limits in sub-2mum pixel CMOS image sensors.

PubMed

Huo, Yijie; Fesenmaier, Christian C; Catrysse, Peter B

2010-03-15

CMOS image sensors with smaller pixels are expected to enable digital imaging systems with better resolution. When pixel size scales below 2 mum, however, diffraction affects the optical performance of the pixel and its microlens, in particular. We present a first-principles electromagnetic analysis of microlens behavior during the lateral scaling of CMOS image sensor pixels. We establish for a three-metal-layer pixel that diffraction prevents the microlens from acting as a focusing element when pixels become smaller than 1.4 microm. This severely degrades performance for on and off-axis pixels in red, green and blue color channels. We predict that one-metal-layer or backside-illuminated pixels are required to extend the functionality of microlenses beyond the 1.4 microm pixel node.

Hot pixel generation in active pixel sensors: dosimetric and micro-dosimetric response

NASA Technical Reports Server (NTRS)

Scheick, Leif; Novak, Frank

2003-01-01

The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.

Object based image analysis for the classification of the growth stages of Avocado crop, in Michoacán State, Mexico

NASA Astrophysics Data System (ADS)

Gao, Yan; Marpu, Prashanth; Morales Manila, Luis M.

2014-11-01

This paper assesses the suitability of 8-band Worldview-2 (WV2) satellite data and object-based random forest algorithm for the classification of avocado growth stages in Mexico. We tested both pixel-based with minimum distance (MD) and maximum likelihood (MLC) and object-based with Random Forest (RF) algorithm for this task. Training samples and verification data were selected by visual interpreting the WV2 images for seven thematic classes: fully grown, middle stage, and early stage of avocado crops, bare land, two types of natural forests, and water body. To examine the contribution of the four new spectral bands of WV2 sensor, all the tested classifications were carried out with and without the four new spectral bands. Classification accuracy assessment results show that object-based classification with RF algorithm obtained higher overall higher accuracy (93.06%) than pixel-based MD (69.37%) and MLC (64.03%) method. For both pixel-based and object-based methods, the classifications with the four new spectral bands (overall accuracy obtained higher accuracy than those without: overall accuracy of object-based RF classification with vs without: 93.06% vs 83.59%, pixel-based MD: 69.37% vs 67.2%, pixel-based MLC: 64.03% vs 36.05%, suggesting that the four new spectral bands in WV2 sensor contributed to the increase of the classification accuracy.

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

PubMed

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

Design, optimization and evaluation of a "smart" pixel sensor array for low-dose digital radiography

NASA Astrophysics Data System (ADS)

Wang, Kai; Liu, Xinghui; Ou, Hai; Chen, Jun

2016-04-01

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. "Smart" pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability.

PubMed

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U

2015-03-06

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle.

An Ultra-Low Power CMOS Image Sensor with On-Chip Energy Harvesting and Power Management Capability

PubMed Central

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U.

2015-01-01

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle. PMID:25756863

Development of a 750x750 pixels CMOS imager sensor for tracking applications

NASA Astrophysics Data System (ADS)

Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

2017-11-01

Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on-chip control and timing function) enabling a high flexibility architecture, make this imager a good candidate for high performance tracking applications.

CMOS foveal image sensor chip

NASA Technical Reports Server (NTRS)

Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Bandera, Cesar (Inventor); Xia, Shu (Inventor)

2002-01-01

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

Method and apparatus of high dynamic range image sensor with individual pixel reset

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric R. (Inventor)

2001-01-01

A wide dynamic range image sensor provides individual pixel reset to vary the integration time of individual pixels. The integration time of each pixel is controlled by column and row reset control signals which activate a logical reset transistor only when both signals coincide for a given pixel.

FDTD-based optical simulations methodology for CMOS image sensors pixels architecture and process optimization

NASA Astrophysics Data System (ADS)

Hirigoyen, Flavien; Crocherie, Axel; Vaillant, Jérôme M.; Cazaux, Yvon

2008-02-01

This paper presents a new FDTD-based optical simulation model dedicated to describe the optical performances of CMOS image sensors taking into account diffraction effects. Following market trend and industrialization constraints, CMOS image sensors must be easily embedded into even smaller packages, which are now equipped with auto-focus and short-term coming zoom system. Due to miniaturization, the ray-tracing models used to evaluate pixels optical performances are not accurate anymore to describe the light propagation inside the sensor, because of diffraction effects. Thus we adopt a more fundamental description to take into account these diffraction effects: we chose to use Maxwell-Boltzmann based modeling to compute the propagation of light, and to use a software with an FDTD-based (Finite Difference Time Domain) engine to solve this propagation. We present in this article the complete methodology of this modeling: on one hand incoherent plane waves are propagated to approximate a product-use diffuse-like source, on the other hand we use periodic conditions to limit the size of the simulated model and both memory and computation time. After having presented the correlation of the model with measurements we will illustrate its use in the case of the optimization of a 1.75μm pixel.

Coarse Scale In Situ Albedo Observations over Heterogeneous Land Surfaces and Validation Strategy

NASA Astrophysics Data System (ADS)

Xiao, Q.; Wu, X.; Wen, J.; BAI, J., Sr.

2017-12-01

To evaluate and improve the quality of coarse-pixel land surface albedo products, validation with ground measurements of albedo is crucial over the spatially and temporally heterogeneous land surface. The performance of albedo validation depends on the quality of ground-based albedo measurements at a corresponding coarse-pixel scale, which can be conceptualized as the "truth" value of albedo at coarse-pixel scale. The wireless sensor network (WSN) technology provides access to continuously observe on the large pixel scale. Taking the albedo products as an example, this paper was dedicated to the validation of coarse-scale albedo products over heterogeneous surfaces based on the WSN observed data, which is aiming at narrowing down the uncertainty of results caused by the spatial scaling mismatch between satellite and ground measurements over heterogeneous surfaces. The reference value of albedo at coarse-pixel scale can be obtained through an upscaling transform function based on all of the observations for that pixel. We will devote to further improve and develop new method that that are better able to account for the spatio-temporal characteristic of surface albedo in the future. Additionally, how to use the widely distributed single site measurements over the heterogeneous surfaces is also a question to be answered. Keywords: Remote sensing; Albedo; Validation; Wireless sensor network (WSN); Upscaling; Heterogeneous land surface; Albedo truth at coarse-pixel scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Domengie, F., E-mail: florian.domengie@st.com; Morin, P.; Bauza, D.

We propose a model for dark current induced by metallic contamination in a CMOS image sensor. Based on Shockley-Read-Hall kinetics, the expression of dark current proposed accounts for the electric field enhanced emission factor due to the Poole-Frenkel barrier lowering and phonon-assisted tunneling mechanisms. To that aim, we considered the distribution of the electric field magnitude and metal atoms in the depth of the pixel. Poisson statistics were used to estimate the random distribution of metal atoms in each pixel for a given contamination dose. Then, we performed a Monte-Carlo-based simulation for each pixel to set the number of metalmore » atoms the pixel contained and the enhancement factor each atom underwent, and obtained a histogram of the number of pixels versus dark current for the full sensor. Excellent agreement with the dark current histogram measured on an ion-implanted gold-contaminated imager has been achieved, in particular, for the description of the distribution tails due to the pixel regions in which the contaminant atoms undergo a large electric field. The agreement remains very good when increasing the temperature by 15 °C. We demonstrated that the amplification of the dark current generated for the typical electric fields encountered in the CMOS image sensors, which depends on the nature of the metal contaminant, may become very large at high electric field. The electron and hole emissions and the resulting enhancement factor are described as a function of the trap characteristics, electric field, and temperature.« less

Using Polynomials to Simplify Fixed Pattern Noise and Photometric Correction of Logarithmic CMOS Image Sensors

PubMed Central

Li, Jing; Mahmoodi, Alireza; Joseph, Dileepan

2015-01-01

An important class of complementary metal-oxide-semiconductor (CMOS) image sensors are those where pixel responses are monotonic nonlinear functions of light stimuli. This class includes various logarithmic architectures, which are easily capable of wide dynamic range imaging, at video rates, but which are vulnerable to image quality issues. To minimize fixed pattern noise (FPN) and maximize photometric accuracy, pixel responses must be calibrated and corrected due to mismatch and process variation during fabrication. Unlike literature approaches, which employ circuit-based models of varying complexity, this paper introduces a novel approach based on low-degree polynomials. Although each pixel may have a highly nonlinear response, an approximately-linear FPN calibration is possible by exploiting the monotonic nature of imaging. Moreover, FPN correction requires only arithmetic, and an optimal fixed-point implementation is readily derived, subject to a user-specified number of bits per pixel. Using a monotonic spline, involving cubic polynomials, photometric calibration is also possible without a circuit-based model, and fixed-point photometric correction requires only a look-up table. The approach is experimentally validated with a logarithmic CMOS image sensor and is compared to a leading approach from the literature. The novel approach proves effective and efficient. PMID:26501287

Camera-on-a-Chip

NASA Technical Reports Server (NTRS)

1999-01-01

Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.

Contact CMOS imaging of gaseous oxygen sensor array

PubMed Central

Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

2014-01-01

We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

Contact CMOS imaging of gaseous oxygen sensor array.

PubMed

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

The CAOS camera platform: ushering in a paradigm change in extreme dynamic range imager design

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.

2017-02-01

Multi-pixel imaging devices such as CCD, CMOS and Focal Plane Array (FPA) photo-sensors dominate the imaging world. These Photo-Detector Array (PDA) devices certainly have their merits including increasingly high pixel counts and shrinking pixel sizes, nevertheless, they are also being hampered by limitations in instantaneous dynamic range, inter-pixel crosstalk, quantum full well capacity, signal-to-noise ratio, sensitivity, spectral flexibility, and in some cases, imager response time. Recently invented is the Coded Access Optical Sensor (CAOS) Camera platform that works in unison with current Photo-Detector Array (PDA) technology to counter fundamental limitations of PDA-based imagers while providing high enough imaging spatial resolution and pixel counts. Using for example the Texas Instruments (TI) Digital Micromirror Device (DMD) to engineer the CAOS camera platform, ushered in is a paradigm change in advanced imager design, particularly for extreme dynamic range applications.

ChromAIX2: A large area, high count-rate energy-resolving photon counting ASIC for a Spectral CT Prototype

NASA Astrophysics Data System (ADS)

Steadman, Roger; Herrmann, Christoph; Livne, Amir

2017-08-01

Spectral CT based on energy-resolving photon counting detectors is expected to deliver additional diagnostic value at a lower dose than current state-of-the-art CT [1]. The capability of simultaneously providing a number of spectrally distinct measurements not only allows distinguishing between photo-electric and Compton interactions but also discriminating contrast agents that exhibit a K-edge discontinuity in the absorption spectrum, referred to as K-edge Imaging [2]. Such detectors are based on direct converting sensors (e.g. CdTe or CdZnTe) and high-rate photon counting electronics. To support the development of Spectral CT and show the feasibility of obtaining rates exceeding 10 Mcps/pixel (Poissonian observed count-rate), the ChromAIX ASIC has been previously reported showing 13.5 Mcps/pixel (150 Mcps/mm2 incident) [3]. The ChromAIX has been improved to offer the possibility of a large area coverage detector, and increased overall performance. The new ASIC is called ChromAIX2, and delivers count-rates exceeding 15 Mcps/pixel with an rms-noise performance of approximately 260 e-. It has an isotropic pixel pitch of 500 μm in an array of 22×32 pixels and is tile-able on three of its sides. The pixel topology consists of a two stage amplifier (CSA and Shaper) and a number of test features allowing to thoroughly characterize the ASIC without a sensor. A total of 5 independent thresholds are also available within each pixel, allowing to acquire 5 spectrally distinct measurements simultaneously. The ASIC also incorporates a baseline restorer to eliminate excess currents induced by the sensor (e.g. dark current and low frequency drifts) which would otherwise cause an energy estimation error. In this paper we report on the inherent electrical performance of the ChromAXI2 as well as measurements obtained with CZT (CdZnTe)/CdTe sensors and X-rays and radioactive sources.

High-voltage pixel sensors for ATLAS upgrade

NASA Astrophysics Data System (ADS)

Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

2014-11-01

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoidn, Oliver R.; Seidler, Gerald T., E-mail: seidler@uw.edu

We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energymore » resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.« less

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

NASA Astrophysics Data System (ADS)

Macchiolo, A.; Nisius, R.; Savic, N.; Terzo, S.

2016-09-01

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 ×1015 neq /cm2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50×50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80°) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

Establishing imaging sensor specifications for digital still cameras

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2007-02-01

Digital Still Cameras, DSCs, have now displaced conventional still cameras in most markets. The heart of a DSC is thought to be the imaging sensor, be it Full Frame CCD, and Interline CCD, a CMOS sensor or the newer Foveon buried photodiode sensors. There is a strong tendency by consumers to consider only the number of mega-pixels in a camera and not to consider the overall performance of the imaging system, including sharpness, artifact control, noise, color reproduction, exposure latitude and dynamic range. This paper will provide a systematic method to characterize the physical requirements of an imaging sensor and supporting system components based on the desired usage. The analysis is based on two software programs that determine the "sharpness", potential for artifacts, sensor "photographic speed", dynamic range and exposure latitude based on the physical nature of the imaging optics, sensor characteristics (including size of pixels, sensor architecture, noise characteristics, surface states that cause dark current, quantum efficiency, effective MTF, and the intrinsic full well capacity in terms of electrons per square centimeter). Examples will be given for consumer, pro-consumer, and professional camera systems. Where possible, these results will be compared to imaging system currently on the market.

CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

2006-01-01

This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to- Digital Conversion

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.; Fossum, Eric R.

1993-01-01

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS* 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e^- rms noise performance.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

How many pixels does it take to make a good 4"×6" print? Pixel count wars revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2011-01-01

In the early 1980's the future of conventional silver-halide photographic systems was of great concern due to the potential introduction of electronic imaging systems then typified by the Sony Mavica analog electronic camera. The focus was on the quality of film-based systems as expressed in the number of equivalent number pixels and bits-per-pixel, and how many pixels would be required to create an equivalent quality image from a digital camera. It was found that 35-mm frames, for ISO 100 color negative film, contained equivalent pixels of 12 microns for a total of 18 million pixels per frame (6 million pixels per layer) with about 6 bits of information per pixel; the introduction of new emulsion technology, tabular AgX grains, increased the value to 8 bit per pixel. Higher ISO speed films had larger equivalent pixels, fewer pixels per frame, but retained the 8 bits per pixel. Further work found that a high quality 3.5" x 5.25" print could be obtained from a three layer system containing 1300 x 1950 pixels per layer or about 7.6 million pixels in all. In short, it became clear that when a digital camera contained about 6 million pixels (in a single layer using a color filter array and appropriate image processing) that digital systems would challenge and replace conventional film-based system for the consumer market. By 2005 this became the reality. Since 2005 there has been a "pixel war" raging amongst digital camera makers. The question arises about just how many pixels are required and are all pixels equal? This paper will provide a practical look at how many pixels are needed for a good print based on the form factor of the sensor (sensor size) and the effective optical modulation transfer function (optical spread function) of the camera lens. Is it better to have 16 million, 5.7-micron pixels or 6 million 7.8-micron pixels? How does intrinsic (no electronic boost) ISO speed and exposure latitude vary with pixel size? A systematic review of these issues will be provided within the context of image quality and ISO speed models developed over the last 15 years.

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

A real-time photogrammetric algorithm for sensor and synthetic image fusion with application to aviation combined vision

NASA Astrophysics Data System (ADS)

Lebedev, M. A.; Stepaniants, D. G.; Komarov, D. V.; Vygolov, O. V.; Vizilter, Yu. V.; Zheltov, S. Yu.

2014-08-01

The paper addresses a promising visualization concept related to combination of sensor and synthetic images in order to enhance situation awareness of a pilot during an aircraft landing. A real-time algorithm for a fusion of a sensor image, acquired by an onboard camera, and a synthetic 3D image of the external view, generated in an onboard computer, is proposed. The pixel correspondence between the sensor and the synthetic images is obtained by an exterior orientation of a "virtual" camera using runway points as a geospatial reference. The runway points are detected by the Projective Hough Transform, which idea is to project the edge map onto a horizontal plane in the object space (the runway plane) and then to calculate intensity projections of edge pixels on different directions of intensity gradient. The performed experiments on simulated images show that on a base glide path the algorithm provides image fusion with pixel accuracy, even in the case of significant navigation errors.

Macro Pixel ASIC (MPA): the readout ASIC for the pixel-strip (PS) module of the CMS outer tracker at HL-LHC

NASA Astrophysics Data System (ADS)

Ceresa, D.; Marchioro, A.; Kloukinas, K.; Kaplon, J.; Bialas, W.; Re, V.; Traversi, G.; Gaioni, L.; Ratti, L.

2014-11-01

The CMS tracker at HL-LHC is required to provide prompt information on particles with high transverse momentum to the central Level 1 trigger. For this purpose, the innermost part of the outer tracker is based on a combination of a pixelated sensor with a short strip sensor, the so-called Pixel-Strip module (PS). The readout of these sensors is carried out by distinct ASICs, the Strip Sensor ASIC (SSA), for the strip layer, and the Macro Pixel ASIC (MPA) for the pixel layer. The processing of the data directly on the front-end module represents a design challenge due to the large data volume (30720 pixels and 1920 strips per module) and the limited power budget. This is the reason why several studies have been carried out to find the best compromise between ASICs performance and power consumption. This paper describes the current status of the MPA ASIC development where the logic for generating prompt information on particles with high transverse momentum is implemented. An overview of the readout method is presented with particular attention on the cluster reduction, position encoding and momentum discrimination logic. Concerning the architectural studies, a software test bench capable of reading physics Monte-Carlo generated events has been developed and used to validate the MPA design and to evaluate the MPA performance. The MPA-Light is scheduled to be submitted for fabrication this year and will include the full analog functions and a part of the digital logic of the final version in order to qualify the chosen VLSI technology for the analog front-end, the module assembly and the low voltage digital supply.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Browning of the landscape of interior Alaska based on 1986-2009 Landsat sensor NDVI

Treesearch

Rebecca A. Baird; David Verbyla; Teresa N. Hollingsworth

2012-01-01

We used a time series of 1986-2009 Landsat sensor data to compute the Normalized Difference Vegetation Index (NDVI) for 30 m pixels within the Bonanza Creek Experimental Forest of interior Alaska. Based on simple linear regression, we found significant (p

Geometric correction methods for Timepix based large area detectors

NASA Astrophysics Data System (ADS)

Zemlicka, J.; Dudak, J.; Karch, J.; Krejci, F.

2017-01-01

X-ray micro radiography with the hybrid pixel detectors provides versatile tool for the object inspection in various fields of science. It has proven itself especially suitable for the samples with low intrinsic attenuation contrast (e.g. soft tissue in biology, plastics in material sciences, thin paint layers in cultural heritage, etc.). The limited size of single Medipix type detector (1.96 cm2) was recently overcome by the construction of large area detectors WidePIX assembled of Timepix chips equipped with edgeless silicon sensors. The largest already built device consists of 100 chips and provides fully sensitive area of 14.3 × 14.3 cm2 without any physical gaps between sensors. The pixel resolution of this device is 2560 × 2560 pixels (6.5 Mpix). The unique modular detector layout requires special processing of acquired data to avoid occurring image distortions. It is necessary to use several geometric compensations after standard corrections methods typical for this type of pixel detectors (i.e. flat-field, beam hardening correction). The proposed geometric compensations cover both concept features and particular detector assembly misalignment of individual chip rows of large area detectors based on Timepix assemblies. The former deals with larger border pixels in individual edgeless sensors and their behaviour while the latter grapple with shifts, tilts and steps between detector rows. The real position of all pixels is defined in Cartesian coordinate system and together with non-binary reliability mask it is used for the final image interpolation. The results of geometric corrections for test wire phantoms and paleo botanic material are presented in this article.

Ultra-low power high-dynamic range color pixel embedding RGB to r-g chromaticity transformation

NASA Astrophysics Data System (ADS)

Lecca, Michela; Gasparini, Leonardo; Gottardi, Massimo

2014-05-01

This work describes a novel color pixel topology that converts the three chromatic components from the standard RGB space into the normalized r-g chromaticity space. This conversion is implemented with high-dynamic range and with no dc power consumption, and the auto-exposure capability of the sensor ensures to capture a high quality chromatic signal, even in presence of very bright illuminants or in the darkness. The pixel is intended to become the basic building block of a CMOS color vision sensor, targeted to ultra-low power applications for mobile devices, such as human machine interfaces, gesture recognition, face detection. The experiments show that significant improvements of the proposed pixel with respect to standard cameras in terms of energy saving and accuracy on data acquisition. An application to skin color-based description is presented.

On the possibility to use semiconductive hybrid pixel detectors for study of radiation belt of the Earth.

NASA Astrophysics Data System (ADS)

Guskov, A.; Shelkov, G.; Smolyanskiy, P.; Zhemchugov, A.

2016-02-01

The scientific apparatus GAMMA-400 designed for study of electromagnetic and hadron components of cosmic rays will be launched to an elliptic orbit with the apogee of about 300 000 km and the perigee of about 500 km. Such a configuration of the orbit allows it to cross periodically the radiation belt and the outer part of magnetosphere. We discuss the possibility to use hybrid pixel detecters based on the Timepix chip and semiconductive sensors on board the GAMMA-400 apparatus. Due to high granularity of the sensor (pixel size is 55 mum) and possibility to measure independently an energy deposition in each pixel, such compact and lightweight detector could be a unique instrument for study of spatial, energy and time structure of electron and proton components of the radiation belt.

Circuit design for the retina-like image sensor based on space-variant lens array

NASA Astrophysics Data System (ADS)

Gao, Hongxun; Hao, Qun; Jin, Xuefeng; Cao, Jie; Liu, Yue; Song, Yong; Fan, Fan

2013-12-01

Retina-like image sensor is based on the non-uniformity of the human eyes and the log-polar coordinate theory. It has advantages of high-quality data compression and redundant information elimination. However, retina-like image sensors based on the CMOS craft have drawbacks such as high cost, low sensitivity and signal outputting efficiency and updating inconvenience. Therefore, this paper proposes a retina-like image sensor based on space-variant lens array, focusing on the circuit design to provide circuit support to the whole system. The circuit includes the following parts: (1) A photo-detector array with a lens array to convert optical signals to electrical signals; (2) a strobe circuit for time-gating of the pixels and parallel paths for high-speed transmission of the data; (3) a high-precision digital potentiometer for the I-V conversion, ratio normalization and sensitivity adjustment, a programmable gain amplifier for automatic generation control(AGC), and a A/D converter for the A/D conversion in every path; (4) the digital data is displayed on LCD and stored temporarily in DDR2 SDRAM; (5) a USB port to transfer the data to PC; (6) the whole system is controlled by FPGA. This circuit has advantages as lower cost, larger pixels, updating convenience and higher signal outputting efficiency. Experiments have proved that the grayscale output of every pixel basically matches the target and a non-uniform image of the target is ideally achieved in real time. The circuit can provide adequate technical support to retina-like image sensors based on space-variant lens array.

Multi-Sensor Registration of Earth Remotely Sensed Imagery

NASA Technical Reports Server (NTRS)

LeMoigne, Jacqueline; Cole-Rhodes, Arlene; Eastman, Roger; Johnson, Kisha; Morisette, Jeffrey; Netanyahu, Nathan S.; Stone, Harold S.; Zavorin, Ilya; Zukor, Dorothy (Technical Monitor)

2001-01-01

Assuming that approximate registration is given within a few pixels by a systematic correction system, we develop automatic image registration methods for multi-sensor data with the goal of achieving sub-pixel accuracy. Automatic image registration is usually defined by three steps; feature extraction, feature matching, and data resampling or fusion. Our previous work focused on image correlation methods based on the use of different features. In this paper, we study different feature matching techniques and present five algorithms where the features are either original gray levels or wavelet-like features, and the feature matching is based on gradient descent optimization, statistical robust matching, and mutual information. These algorithms are tested and compared on several multi-sensor datasets covering one of the EOS Core Sites, the Konza Prairie in Kansas, from four different sensors: IKONOS (4m), Landsat-7/ETM+ (30m), MODIS (500m), and SeaWIFS (1000m).

High dynamic range vision sensor for automotive applications

NASA Astrophysics Data System (ADS)

Grenet, Eric; Gyger, Steve; Heim, Pascal; Heitger, Friedrich; Kaess, Francois; Nussbaum, Pascal; Ruedi, Pierre-Francois

2005-02-01

A 128 x 128 pixels, 120 dB vision sensor extracting at the pixel level the contrast magnitude and direction of local image features is used to implement a lane tracking system. The contrast representation (relative change of illumination) delivered by the sensor is independent of the illumination level. Together with the high dynamic range of the sensor, it ensures a very stable image feature representation even with high spatial and temporal inhomogeneities of the illumination. Dispatching off chip image feature is done according to the contrast magnitude, prioritizing features with high contrast magnitude. This allows to reduce drastically the amount of data transmitted out of the chip, hence the processing power required for subsequent processing stages. To compensate for the low fill factor (9%) of the sensor, micro-lenses have been deposited which increase the sensitivity by a factor of 5, corresponding to an equivalent of 2000 ASA. An algorithm exploiting the contrast representation output by the vision sensor has been developed to estimate the position of a vehicle relative to the road markings. The algorithm first detects the road markings based on the contrast direction map. Then, it performs quadratic fits on selected kernel of 3 by 3 pixels to achieve sub-pixel accuracy on the estimation of the lane marking positions. The resulting precision on the estimation of the vehicle lateral position is 1 cm. The algorithm performs efficiently under a wide variety of environmental conditions, including night and rainy conditions.

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

DOE PAGES

Bubna, M.; Bolla, G.; Bortoletto, D.; ...

2015-08-03

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have beenmore » fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

Advancements in DEPMOSFET device developments for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Bombelli, L.; Eckart, R.; Fiorini, C.; Fischer, P.; Hälker, O.; Herrmann, S.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Schaller, G.; Schopper, F.; Soltau, H.; Strüder, L.; Wölfel, S.

2006-06-01

DEPMOSFET based Active Pixel Sensor (APS) matrices are a new detector concept for X-ray imaging spectroscopy missions. They can cope with the challenging requirements of the XEUS Wide Field Imager and combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. From the evaluation of first prototypes, new concepts have been developed to overcome the minor drawbacks and problems encountered for the older devices. The new devices will have a pixel size of 75 μm × 75 μm. Besides 64 × 64 pixel arrays, prototypes with a sizes of 256 × 256 pixels and 128 × 512 pixels and an active area of about 3.6 cm2 will be produced, a milestone on the way towards the fully grown XEUS WFI device. The production of these improved devices is currently on the way. At the same time, the development of the next generation of front-end electronics has been started, which will permit to operate the sensor devices with the readout speed required by XEUS. Here, a summary of the DEPFET capabilities, the concept of the sensors of the next generation and the new front-end electronics will be given. Additionally, prospects of new device developments using the DEPFET as a sensitive element are shown, e.g. so-called RNDR-pixels, which feature repetitive non-destructive readout to lower the readout noise below the 1 e - ENC limit.

Log polar image sensor in CMOS technology

NASA Astrophysics Data System (ADS)

Scheffer, Danny; Dierickx, Bart; Pardo, Fernando; Vlummens, Jan; Meynants, Guy; Hermans, Lou

1996-08-01

We report on the design, design issues, fabrication and performance of a log-polar CMOS image sensor. The sensor is developed for the use in a videophone system for deaf and hearing impaired people, who are not capable of communicating through a 'normal' telephone. The system allows 15 detailed images per second to be transmitted over existing telephone lines. This framerate is sufficient for conversations by means of sign language or lip reading. The pixel array of the sensor consists of 76 concentric circles with (up to) 128 pixels per circle, in total 8013 pixels. The interior pixels have a pitch of 14 micrometers, up to 250 micrometers at the border. The 8013-pixels image is mapped (log-polar transformation) in a X-Y addressable 76 by 128 array.

Is flat fielding safe for precision CCD astronomy?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Is flat fielding safe for precision CCD astronomy?

DOE PAGES

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

2017-07-06

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Sensing, Spectra and Scaling: What's in Store for Land Observations

NASA Technical Reports Server (NTRS)

Goetz, Alexander F. H.

2001-01-01

Bill Pecora's 1960's vision of the future, using spacecraft-based sensors for mapping the environment and exploring for resources, is being implemented today. New technology has produced better sensors in space such as the Landsat Thematic Mapper (TM) and SPOT, and creative researchers are continuing to find new applications. However, with existing sensors, and those intended for launch in this century, the potential for extracting information from the land surface is far from being exploited. The most recent technology development is imaging spectrometry, the acquisition of images in hundreds of contiguous spectral bands, such that for any pixel a complete reflectance spectrum can be acquired. Experience with Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) has shown that, with proper attention paid to absolute calibration, it is possible to acquire apparent surface reflectance to 5% accuracy without any ground-based measurement. The data reduction incorporates in educated guess of the aerosol scattering, development of a precipitable water vapor map from the data and mapping of cirrus clouds in the 1.38 micrometer band. This is not possible with TM. The pixel size in images of the earth plays and important role in the type and quality of information that can be derived. Less understood is the coupling between spatial and spectral resolution in a sensor. Recent work has shown that in processing the data to derive the relative abundance of materials in a pixel, also known is unmixing, the pixel size is an important parameter. A variance in the relative abundance of materials among the pixels is necessary to be able to derive the endmembers or pure material constituent spectra. In most cases, the 1 km pixel size for the Earth Observing System Moderate Resolution Imaging Spectroradiometer (MODIS) instrument is too large to meet the variance criterion. A pointable high spatial and spectral resolution imaging spectrometer in orbit will be necessary to make the major next step in our understanding of the solid earth surface and its changing face.

A Spectralon BRF Data Base for MISR Calibration Application

NASA Technical Reports Server (NTRS)

Bruegge, C.; Chrien, N.; Haner, D.

1999-01-01

The Multi-angle Imaging SpectroRadiometer (MISR) is an Earth observing sensor which will provide global retrievals of aerosols, clouds, and land surface parameters. Instrument specifications require high accuracy absolute calibration, as well as accurate camera-to-camera, band-to-band and pixel-to-pixel relative response determinations.

Large Format CMOS-based Detectors for Diffraction Studies

NASA Astrophysics Data System (ADS)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at reasonable cost.

Development of N+ in P pixel sensors for a high-luminosity large hadron collider

NASA Astrophysics Data System (ADS)

Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

2014-11-01

Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

CMOS Image Sensors for High Speed Applications.

PubMed

El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

2009-01-01

Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

Pixel-super-resolved lensfree holography using adaptive relaxation factor and positional error correction

NASA Astrophysics Data System (ADS)

Zhang, Jialin; Chen, Qian; Sun, Jiasong; Li, Jiaji; Zuo, Chao

2018-01-01

Lensfree holography provides a new way to effectively bypass the intrinsical trade-off between the spatial resolution and field-of-view (FOV) of conventional lens-based microscopes. Unfortunately, due to the limited sensor pixel-size, unpredictable disturbance during image acquisition, and sub-optimum solution to the phase retrieval problem, typical lensfree microscopes only produce compromised imaging quality in terms of lateral resolution and signal-to-noise ratio (SNR). In this paper, we propose an adaptive pixel-super-resolved lensfree imaging (APLI) method to address the pixel aliasing problem by Z-scanning only, without resorting to subpixel shifting or beam-angle manipulation. Furthermore, an automatic positional error correction algorithm and adaptive relaxation strategy are introduced to enhance the robustness and SNR of reconstruction significantly. Based on APLI, we perform full-FOV reconstruction of a USAF resolution target across a wide imaging area of {29.85 mm2 and achieve half-pitch lateral resolution of 770 nm, surpassing 2.17 times of the theoretical Nyquist-Shannon sampling resolution limit imposed by the sensor pixel-size (1.67 μm). Full-FOV imaging result of a typical dicot root is also provided to demonstrate its promising potential applications in biologic imaging.

Measurements and simulations of MAPS (Monolithic Active Pixel Sensors) response to charged particles - a study towards a vertex detector at the ILC

NASA Astrophysics Data System (ADS)

Maczewski, Lukasz

2010-05-01

The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector concepts for the ILC vertex detector (VTX). Basic characteristics of two MAPS pixel matrices MIMOSA-5 (17 μm pixel pitch) and MIMOSA-18 (10 μm pixel pitch) are studied and compared (pedestals, noises, calibration of the ADC-to-electron conversion gain, detector efficiency and charge collection properties). The e+e- collisions at the ILC will be accompanied by intense beamsstrahlung background of electrons and positrons hitting inner planes of the vertex detector. Tracks of this origin leave elongated clusters contrary to those of secondary hadrons. Cluster characteristics and orientation with respect to the pixels netting are studied for perpendicular and inclined tracks. Elongation and precision of determining the cluster orientation as a function of the angle of incidence were measured. A simple model of signal formation (based on charge diffusion) is proposed and tested using the collected data.

New results on diamond pixel sensors using ATLAS frontend electronics

NASA Astrophysics Data System (ADS)

Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K. K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Riester, J. L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

2003-03-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

Urban Image Classification: Per-Pixel Classifiers, Sub-Pixel Analysis, Object-Based Image Analysis, and Geospatial Methods. 10; Chapter

NASA Technical Reports Server (NTRS)

Myint, Soe W.; Mesev, Victor; Quattrochi, Dale; Wentz, Elizabeth A.

2013-01-01

Remote sensing methods used to generate base maps to analyze the urban environment rely predominantly on digital sensor data from space-borne platforms. This is due in part from new sources of high spatial resolution data covering the globe, a variety of multispectral and multitemporal sources, sophisticated statistical and geospatial methods, and compatibility with GIS data sources and methods. The goal of this chapter is to review the four groups of classification methods for digital sensor data from space-borne platforms; per-pixel, sub-pixel, object-based (spatial-based), and geospatial methods. Per-pixel methods are widely used methods that classify pixels into distinct categories based solely on the spectral and ancillary information within that pixel. They are used for simple calculations of environmental indices (e.g., NDVI) to sophisticated expert systems to assign urban land covers. Researchers recognize however, that even with the smallest pixel size the spectral information within a pixel is really a combination of multiple urban surfaces. Sub-pixel classification methods therefore aim to statistically quantify the mixture of surfaces to improve overall classification accuracy. While within pixel variations exist, there is also significant evidence that groups of nearby pixels have similar spectral information and therefore belong to the same classification category. Object-oriented methods have emerged that group pixels prior to classification based on spectral similarity and spatial proximity. Classification accuracy using object-based methods show significant success and promise for numerous urban 3 applications. Like the object-oriented methods that recognize the importance of spatial proximity, geospatial methods for urban mapping also utilize neighboring pixels in the classification process. The primary difference though is that geostatistical methods (e.g., spatial autocorrelation methods) are utilized during both the pre- and post-classification steps. Within this chapter, each of the four approaches is described in terms of scale and accuracy classifying urban land use and urban land cover; and for its range of urban applications. We demonstrate the overview of four main classification groups in Figure 1 while Table 1 details the approaches with respect to classification requirements and procedures (e.g., reflectance conversion, steps before training sample selection, training samples, spatial approaches commonly used, classifiers, primary inputs for classification, output structures, number of output layers, and accuracy assessment). The chapter concludes with a brief summary of the methods reviewed and the challenges that remain in developing new classification methods for improving the efficiency and accuracy of mapping urban areas.

Readout of the upgraded ALICE-ITS

NASA Astrophysics Data System (ADS)

Szczepankiewicz, A.; ALICE Collaboration

2016-07-01

The ALICE experiment will undergo a major upgrade during the second long shutdown of the CERN LHC. As part of this program, the present Inner Tracking System (ITS), which employs different layers of hybrid pixels, silicon drift and strip detectors, will be replaced by a completely new tracker composed of seven layers of monolithic active pixel sensors. The upgraded ITS will have more than twelve billion pixels in total, producing 300 Gbit/s of data when tracking 50 kHz Pb-Pb events. Two families of pixel chips realized with the TowerJazz CMOS imaging process have been developed as candidate sensors: the ALPIDE, which uses a proprietary readout and sparsification mechanism and the MISTRAL-O, based on a proven rolling shutter architecture. Both chips can operate in continuous mode, with the ALPIDE also supporting triggered operations. As the communication IP blocks are shared among the two chip families, it has been possible to develop a common Readout Electronics. All the sensor components (analog stages, state machines, buffers, FIFOs, etc.) have been modelled in a system level simulation, which has been extensively used to optimize both the sensor and the whole readout chain design in an iterative process. This contribution covers the progress of the R&D efforts and the overall expected performance of the ALICE-ITS readout system.

Small pixel cross-talk MTF and its impact on MWIR sensor performance

NASA Astrophysics Data System (ADS)

Goss, Tristan M.; Willers, Cornelius J.

2017-05-01

As pixel sizes reduce in the development of modern High Definition (HD) Mid Wave Infrared (MWIR) detectors the interpixel cross-talk becomes increasingly difficult to regulate. The diffusion lengths required to achieve the quantum efficiency and sensitivity of MWIR detectors are typically longer than the pixel pitch dimension, and the probability of inter-pixel cross-talk increases as the pixel pitch/diffusion length fraction decreases. Inter-pixel cross-talk is most conveniently quantified by the focal plane array sampling Modulation Transfer Function (MTF). Cross-talk MTF will reduce the ideal sinc square pixel MTF that is commonly used when modelling sensor performance. However, cross-talk MTF data is not always readily available from detector suppliers, and since the origins of inter-pixel cross-talk are uniquely device and manufacturing process specific, no generic MTF models appear to satisfy the needs of the sensor designers and analysts. In this paper cross-talk MTF data has been collected from recent publications and the development for a generic cross-talk MTF model to fit this data is investigated. The resulting cross-talk MTF model is then included in a MWIR sensor model and the impact on sensor performance is evaluated in terms of the National Imagery Interoperability Rating Scale's (NIIRS) General Image Quality Equation (GIQE) metric for a range of fnumber/ detector pitch Fλ/d configurations and operating environments. By applying non-linear boost transfer functions in the signal processing chain, the contrast losses due to cross-talk may be compensated for. Boost transfer functions, however, also reduce the signal to noise ratio of the sensor. In this paper boost function limits are investigated and included in the sensor performance assessments.

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

NASA Astrophysics Data System (ADS)

Dragone, A.; Kenney, C.; Lozinskaya, A.; Tolbanov, O.; Tyazhev, A.; Zarubin, A.; Wang, Zhehui

2016-11-01

A multilayer stacked X-ray camera concept is described. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detection [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.

Origami silicon optoelectronics for hemispherical electronic eye systems.

PubMed

Zhang, Kan; Jung, Yei Hwan; Mikael, Solomon; Seo, Jung-Hun; Kim, Munho; Mi, Hongyi; Zhou, Han; Xia, Zhenyang; Zhou, Weidong; Gong, Shaoqin; Ma, Zhenqiang

2017-11-24

Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.

Mapping Capacitive Coupling Among Pixels in a Sensor Array

NASA Technical Reports Server (NTRS)

Seshadri, Suresh; Cole, David M.; Smith, Roger M.

2010-01-01

An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.

Subpixel mapping and test beam studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS inner detector upgrade

NASA Astrophysics Data System (ADS)

Bisanz, T.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.

2017-08-01

The upgrade to the High Luminosity Large Hadron Collider will increase the instantaneous luminosity by more than a factor of 5, thus creating significant challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives to the well-established hybrid design using passive sensors since they allow for smaller pixel sizes and cost effective production. This article presents studies of a high-voltage CMOS active pixel sensor designed for the ATLAS tracker upgrade. The sensor is glued to the read-out chip of the Insertable B-Layer, forming a capacitively coupled pixel detector. The pixel pitch of the device under test is 33× 125 μm2, while the pixels of the read-out chip have a pitch of 50× 250 μm2. Three pixels of the CMOS device are connected to one read-out pixel, the information of which of these subpixels is hit is encoded in the amplitude of the output signal (subpixel encoding). Test beam measurements are presented that demonstrate the usability of this subpixel encoding scheme.

Experimental single-chip color HDTV image acquisition system with 8M-pixel CMOS image sensor

NASA Astrophysics Data System (ADS)

Shimamoto, Hiroshi; Yamashita, Takayuki; Funatsu, Ryohei; Mitani, Kohji; Nojiri, Yuji

2006-02-01

We have developed an experimental single-chip color HDTV image acquisition system using 8M-pixel CMOS image sensor. The sensor has 3840 × 2160 effective pixels and is progressively scanned at 60 frames per second. We describe the color filter array and interpolation method to improve image quality with a high-pixel-count single-chip sensor. We also describe an experimental image acquisition system we used to measured spatial frequency characteristics in the horizontal direction. The results indicate good prospects for achieving a high quality single chip HDTV camera that reduces pseudo signals and maintains high spatial frequency characteristics within the frequency band for HDTV.

The ATLAS Diamond Beam Monitor: Luminosity detector at the LHC

NASA Astrophysics Data System (ADS)

Schaefer, D. M.; ATLAS Collaboration

2016-07-01

After the first three years of the LHC running, the ATLAS experiment extracted its pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes are based on chemical vapor deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This paper describes the lessons learned in construction and commissioning of the ATLAS Diamond Beam Monitor (DBM). We show results from the construction quality assurance tests and commissioning performance, including results from cosmic ray running in early 2015.

Optimization of CMOS image sensor utilizing variable temporal multisampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability

NASA Astrophysics Data System (ADS)

Kabir, Salman; Smith, Craig; Armstrong, Frank; Barnard, Gerrit; Schneider, Alex; Guidash, Michael; Vogelsang, Thomas; Endsley, Jay

2018-03-01

Differential binary pixel technology is a threshold-based timing, readout, and image reconstruction method that utilizes the subframe partial charge transfer technique in a standard four-transistor (4T) pixel CMOS image sensor to achieve a high dynamic range video with stop motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21 dB. The method is verified in silicon using a Taiwan Semiconductor Manufacturing Company's 65 nm 1.1 μm pixel technology 1 megapixel test chip array and is compared with a traditional 4 × oversampling technique using full charge transfer to show low light SNR superiority of the presented technology.

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

Active pixel sensors with substantially planarized color filtering elements

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

1999-01-01

A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

An EUDET/AIDA Pixel Beam Telescope for Detector Development

NASA Astrophysics Data System (ADS)

Rubinskiy, I.; EUDET Consortium; AIDA Consortium

Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

Integration of nanostructured planar diffractive lenses dedicated to near infrared detection for CMOS image sensors.

PubMed

Lopez, Thomas; Massenot, Sébastien; Estribeau, Magali; Magnan, Pierre; Pardo, Fabrice; Pelouard, Jean-Luc

2016-04-18

This paper deals with the integration of metallic and dielectric nanostructured planar lenses into a pixel from a silicon based CMOS image sensor, for a monochromatic application at 1.064 μm. The first is a Plasmonic Lens, based on the phase delay through nanoslits, which has been found to be hardly compatible with current CMOS technology and exhibits a notable metallic absorption. The second is a dielectric Phase-Fresnel Lens integrated at the top of a pixel, it exhibits an Optical Efficiency (OE) improved by a few percent and an angle of view of 50°. The third one is a metallic diffractive lens integrated inside a pixel, which shows a better OE and an angle of view of 24°. The last two lenses exhibit a compatibility with a spectral band close to 1.064 μm.

Wavelength scanning achieves pixel super-resolution in holographic on-chip microscopy

NASA Astrophysics Data System (ADS)

Luo, Wei; Göröcs, Zoltan; Zhang, Yibo; Feizi, Alborz; Greenbaum, Alon; Ozcan, Aydogan

2016-03-01

Lensfree holographic on-chip imaging is a potent solution for high-resolution and field-portable bright-field imaging over a wide field-of-view. Previous lensfree imaging approaches utilize a pixel super-resolution technique, which relies on sub-pixel lateral displacements between the lensfree diffraction patterns and the image sensor's pixel-array, to achieve sub-micron resolution under unit magnification using state-of-the-art CMOS imager chips, commonly used in e.g., mobile-phones. Here we report, for the first time, a wavelength scanning based pixel super-resolution technique in lensfree holographic imaging. We developed an iterative super-resolution algorithm, which generates high-resolution reconstructions of the specimen from low-resolution (i.e., under-sampled) diffraction patterns recorded at multiple wavelengths within a narrow spectral range (e.g., 10-30 nm). Compared with lateral shift-based pixel super-resolution, this wavelength scanning approach does not require any physical shifts in the imaging setup, and the resolution improvement is uniform in all directions across the sensor-array. Our wavelength scanning super-resolution approach can also be integrated with multi-height and/or multi-angle on-chip imaging techniques to obtain even higher resolution reconstructions. For example, using wavelength scanning together with multi-angle illumination, we achieved a halfpitch resolution of 250 nm, corresponding to a numerical aperture of 1. In addition to pixel super-resolution, the small scanning steps in wavelength also enable us to robustly unwrap phase, revealing the specimen's optical path length in our reconstructed images. We believe that this new wavelength scanning based pixel super-resolution approach can provide competitive microscopy solutions for high-resolution and field-portable imaging needs, potentially impacting tele-pathology applications in resource-limited-settings.

An active pixel sensor to detect diffused X-ray during Interventional Radiology procedure

NASA Astrophysics Data System (ADS)

Servoli, L.; Battisti, D.; Biasini, M.; Checcucci, B.; Conti, E.; Di Lorenzo, R.; Esposito, A.; Fanò, L.; Paolucci, M.; Passeri, D.; Pentiricci, A.; Placidi, P.

2012-04-01

Interventional radiologists and staff members are frequently exposed to protracted and fractionated low doses of ionizing radiation due to diffused X-ray radiation. The authors propose a novel approach to monitor on line staff during their interventions by using a device based on an Active Pixel Sensor developed for tracking applications. Two different photodiode configurations have been tested in standard Interventional Radiology working conditions. Both options have demonstrated the capability to measure the photon flux and the energy flux to a sufficient degree of uncertainty.

CMOS image sensor with lateral electric field modulation pixels for fluorescence lifetime imaging with sub-nanosecond time response

NASA Astrophysics Data System (ADS)

Li, Zhuo; Seo, Min-Woong; Kagawa, Keiichiro; Yasutomi, Keita; Kawahito, Shoji

2016-04-01

This paper presents the design and implementation of a time-resolved CMOS image sensor with a high-speed lateral electric field modulation (LEFM) gating structure for time domain fluorescence lifetime measurement. Time-windowed signal charge can be transferred from a pinned photodiode (PPD) to a pinned storage diode (PSD) by turning on a pair of transfer gates, which are situated beside the channel. Unwanted signal charge can be drained from the PPD to the drain by turning on another pair of gates. The pixel array contains 512 (V) × 310 (H) pixels with 5.6 × 5.6 µm2 pixel size. The imager chip was fabricated using 0.11 µm CMOS image sensor process technology. The prototype sensor has a time response of 150 ps at 374 nm. The fill factor of the pixels is 5.6%. The usefulness of the prototype sensor is demonstrated for fluorescence lifetime imaging through simulation and measurement results.

Advances in OLED-based oxygen sensors with structurally integrated OLED, sensor film, and thin-film Si photodetector

NASA Astrophysics Data System (ADS)

Ghosh, Debju; Shinar, Ruth; Cai, Yuankun; Zhou, Zhaoqun; Dalal, Vikram L.; Shinar, Joseph

2007-09-01

Steps towards the improvement of a compact photoluminescence (PL)-based sensor array that is fully structurally integrated are described. The approach is demonstrated for oxygen sensing, which can be monitored via its effect on the PL intensity I or decay time τ of oxygen-sensitive dyes such as Pt octaethylporphryn (PtOEP) and its Pd analog (PdOEP). The integrated components include (1) an organic light emitting device (OLED) excitation source, which is an array of coumarin-doped tris(quinolinolate) Al (Alq 3) pixels, (2) the sensor film, i.e., PdOEP embedded in polystyrene, and (3) the photodetector (PD), which is a plasma-enhanced CVD-grown p-i-n or n-i-p structure, based on amorphous or nanocrystalline (Si,Ge):H. These components are fabricated on common or separate substrates that are attached back-to-back, resulting in sensors with a thickness largely determined by that of the substrates. The fully integrated oxygen sensor is demonstrated first by fabricating each of the three components on a separate substrate. The PD was placed in front of a flow cell containing the sensor film, while the OLED array was "behind" the sensor film. This design showed the expected trend in monitoring different concentration of O II via their effect on I, with improved detection sensitivity achieved by shielding the electromagnetic noise synchronous with the pulsed OLED. The detection sensitivity using the I monitoring mode is expected to further increase by reducing the OLED tail emission. The issue of the OLED background can be eliminated by monitoring the oxygen concentration via its effect on τ, where the OLED is pulsed and τ is measured while the OLED is off. Steps therefore focused also on shortening the response time of the PDs, and understanding the factors affecting their speed. Development of a sensor array, where the PD pixels are fabricated between the OLED pixels on the same side of a common substrate, is also discussed.

Photon counting phosphorescence lifetime imaging with TimepixCam

DOE PAGES

Hirvonen, Liisa M.; Fisher-Levine, Merlin; Suhling, Klaus; ...

2017-01-12

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window, and read out by a Timepix ASIC. The 256 x 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting (TCSPC) imaging. We have characterised the photon detection capabilities of this detector system, and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200more » μm diameter polystyrene beads.« less

Photon counting phosphorescence lifetime imaging with TimepixCam.

PubMed

Hirvonen, Liisa M; Fisher-Levine, Merlin; Suhling, Klaus; Nomerotski, Andrei

2017-01-01

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window and read out by a Timepix Application Specific Integrated Circuit. The 256 × 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting imaging. We have characterised the photon detection capabilities of this detector system and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200 μm diameter polystyrene beads.

Photon counting phosphorescence lifetime imaging with TimepixCam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirvonen, Liisa M.; Fisher-Levine, Merlin; Suhling, Klaus

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window, and read out by a Timepix ASIC. The 256 x 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting (TCSPC) imaging. We have characterised the photon detection capabilities of this detector system, and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200more » μm diameter polystyrene beads.« less

Photon counting phosphorescence lifetime imaging with TimepixCam

NASA Astrophysics Data System (ADS)

Hirvonen, Liisa M.; Fisher-Levine, Merlin; Suhling, Klaus; Nomerotski, Andrei

2017-01-01

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window and read out by a Timepix Application Specific Integrated Circuit. The 256 × 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting imaging. We have characterised the photon detection capabilities of this detector system and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200 μm diameter polystyrene beads.

Noise and spectroscopic performance of DEPMOSFET matrix devices for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Fischer, P.; Hälker, O.; Herrmann, S.; Kohrs, R.; Krüger, H.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Strüder, L.; Trimpl, M.; Wermes, N.; Wölfel, S.

2005-08-01

DEPMOSFET based Active Pixel Sensor (APS) matrix devices, originally developed to cope with the challenging requirements of the XEUS Wide Field Imager, have proven to be a promising new imager concept for a variety of future X-ray imaging and spectroscopy missions like Simbol-X. The devices combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. A production of sensor prototypes with 64 x 64 pixels with a size of 75 μm x 75 μm each has recently been finished at the MPI semiconductor laboratory in Munich. The devices are built for row-wise readout and require dedicated control and signal processing electronics of the CAMEX type, which is integrated together with the sensor onto a readout hybrid. A number of hybrids incorporating the most promising sensor design variants has been built, and their performance has been studied in detail. A spectroscopic resolution of 131 eV has been measured, the readout noise is as low as 3.5 e- ENC. Here, the dependence of readout noise and spectroscopic resolution on the device temperature is presented.

Radiation hard analog circuits for ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

2016-03-01

The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

AVIRIS calibration using the cloud-shadow method

NASA Technical Reports Server (NTRS)

Carder, K. L.; Reinersman, P.; Chen, R. F.

1993-01-01

More than 90 percent of the signal at an ocean-viewing, satellite sensor is due to the atmosphere, so a 5 percent sensor-calibration error viewing a target that contributes but 10 percent of the signal received at the sensor may result in a target-reflectance error of more than 50 percent. Since prelaunch calibration accuracies of 5 percent are typical of space-sensor requirements, recalibration of the sensor using ground-base methods is required for low-signal target. Known target reflectance or water-leaving radiance spectra and atmospheric correction parameters are required. In this article we describe an atmospheric-correction method that uses cloud shadowed pixels in combination with pixels in a neighborhood region of similar optical properties to remove atmospheric effects from ocean scenes. These neighboring pixels can then be used as known reflectance targets for validation of the sensor calibration and atmospheric correction. The method uses the difference between water-leaving radiance values for these two regions. This allows nearly identical optical contributions to the two signals (e.g., path radiance and Fresnel-reflected skylight) to be removed, leaving mostly solar photons backscattered from beneath the sea to dominate the residual signal. Normalization by incident solar irradiance reaching the sea surface provides the remote-sensing reflectance of the ocean at the location of the neighbor region.

High resistivity CMOS pixel sensors and their application to the STAR PXL detector

NASA Astrophysics Data System (ADS)

Dorokhov, A.; Bertolone, G.; Baudot, J.; Colledani, C.; Claus, G.; Degerli, Y.; de Masi, R.; Deveaux, M.; Dozière, G.; Dulinski, W.; Gélin, M.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.; Voutsinas, G.; Winter, M.

2011-09-01

CMOS pixel sensors are foreseen to equip the vertex detector (called PXL) of the upgraded inner tracking system of the STAR experiment at RHIC. The sensors (called ULTIMATE) are being designed and their architecture is being optimized for the PXL specifications, extrapolating from the MIMOSA-26 sensor realized for the EUDET beam telescope.The paper gives an overview of the ULTIMATE sensor specifications and of the adaptation of its forerunner, MIMOSA-26, to the PXL specifications.One of the main changes between MIMOSA-26 and ULTIMATE is the use of a high resistivity epitaxial layer. Recent performance assessments obtained with MIMOSA-26 sensors manufactured on such an epitaxial layer are presented, as well as results of beam tests obtained with a prototype probing improved versions of the MIMOSA-26 pixel design. They show drastic improvements of the pixel signal-to-noise ratio and of the sensor radiation tolerance with respect to the performances achieved with a standard, i.e. low resistivity, layer.

Vision Sensors and Cameras

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Silicon charge-coupled-device (CCD) imagers have been and are a specialty market ruled by a few companies for decades. Based on CMOS technologies, active-pixel sensors (APS) began to appear in 1990 at the 1 μm technology node. These pixels allow random access, global shutters, and they are compatible with focal-plane imaging systems combining sensing and first-level image processing. The progress towards smaller features and towards ultra-low leakage currents has provided reduced dark currents and μm-size pixels. All chips offer Mega-pixel resolution, and many have very high sensitivities equivalent to ASA 12.800. As a result, HDTV video cameras will become a commodity. Because charge-integration sensors suffer from a limited dynamic range, significant processing effort is spent on multiple exposure and piece-wise analog-digital conversion to reach ranges >10,000:1. The fundamental alternative is log-converting pixels with an eye-like response. This offers a range of almost a million to 1, constant contrast sensitivity and constant colors, important features in professional, technical and medical applications. 3D retino-morphic stacking of sensing and processing on top of each other is being revisited with sub-100 nm CMOS circuits and with TSV technology. With sensor outputs directly on top of neurons, neural focal-plane processing will regain momentum, and new levels of intelligent vision will be achieved. The industry push towards thinned wafers and TSV enables backside-illuminated and other pixels with a 100% fill-factor. 3D vision, which relies on stereo or on time-of-flight, high-speed circuitry, will also benefit from scaled-down CMOS technologies both because of their size as well as their higher speed.

FITPix COMBO—Timepix detector with integrated analog signal spectrometric readout

NASA Astrophysics Data System (ADS)

Holik, M.; Kraus, V.; Georgiev, V.; Granja, C.

2016-02-01

The hybrid semiconductor pixel detector Timepix has proven a powerful tool in radiation detection and imaging. Energy loss and directional sensitivity as well as particle type resolving power are possible by high resolution particle tracking and per-pixel energy and quantum-counting capability. The spectrometric resolving power of the detector can be further enhanced by analyzing the analog signal of the detector common sensor electrode (also called back-side pulse). In this work we present a new compact readout interface, based on the FITPix readout architecture, extended with integrated analog electronics for the detector's common sensor signal. Integrating simultaneous operation of the digital per-pixel information with the common sensor (called also back-side electrode) analog pulse processing circuitry into one device enhances the detector capabilities and opens new applications. Thanks to noise suppression and built-in electromagnetic interference shielding the common hardware platform enables parallel analog signal spectroscopy on the back side pulse signal with full operation and read-out of the pixelated digital part, the noise level is 600 keV and spectrometric resolution around 100 keV for 5.5 MeV alpha particles. Self-triggering is implemented with delay of few tens of ns making use of adjustable low-energy threshold of the particle analog signal amplitude. The digital pixelated full frame can be thus triggered and recorded together with the common sensor analog signal. The waveform, which is sampled with frequency 100 MHz, can be recorded in adjustable time window including time prior to the trigger level. An integrated software tool provides control, on-line display and read-out of both analog and digital channels. Both the pixelated digital record and the analog waveform are synchronized and written out by common time stamp.

High speed wide field CMOS camera for Transneptunian Automatic Occultation Survey

NASA Astrophysics Data System (ADS)

Wang, Shiang-Yu; Geary, John C.; Amato, Stephen M.; Hu, Yen-Sang; Ling, Hung-Hsu; Huang, Pin-Jie; Furesz, Gabor; Chen, Hsin-Yo; Chang, Yin-Chang; Szentgyorgyi, Andrew; Lehner, Matthew; Norton, Timothy

2014-08-01

The Transneptunian Automated Occultation Survey (TAOS II) is a three robotic telescope project to detect the stellar occultation events generated by Trans Neptunian Objects (TNOs). TAOS II project aims to monitor about 10000 stars simultaneously at 20Hz to enable statistically significant event rate. The TAOS II camera is designed to cover the 1.7 degree diameter field of view (FoV) of the 1.3m telescope with 10 mosaic 4.5kx2k CMOS sensors. The new CMOS sensor has a back illumination thinned structure and high sensitivity to provide similar performance to that of the backillumination thinned CCDs. The sensor provides two parallel and eight serial decoders so the region of interests can be addressed and read out separately through different output channels efficiently. The pixel scale is about 0.6"/pix with the 16μm pixels. The sensors, mounted on a single Invar plate, are cooled to the operation temperature of about 200K by a cryogenic cooler. The Invar plate is connected to the dewar body through a supporting ring with three G10 bipods. The deformation of the cold plate is less than 10μm to ensure the sensor surface is always within ±40μm of focus range. The control electronics consists of analog part and a Xilinx FPGA based digital circuit. For each field star, 8×8 pixels box will be readout. The pixel rate for each channel is about 1Mpix/s and the total pixel rate for each camera is about 80Mpix/s. The FPGA module will calculate the total flux and also the centroid coordinates for every field star in each exposure.

The Simbol-X Low Energy Detector

NASA Astrophysics Data System (ADS)

Lechner, Peter

2009-05-01

For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

True Ortho Generation of Urban Area Using High Resolution Aerial Photos

NASA Astrophysics Data System (ADS)

Hu, Yong; Stanley, David; Xin, Yubin

2016-06-01

The pros and cons of existing methods for true ortho generation are analyzed based on a critical literature review for its two major processing stages: visibility analysis and occlusion compensation. They process frame and pushbroom images using different algorithms for visibility analysis due to the need of perspective centers used by the z-buffer (or alike) techniques. For occlusion compensation, the pixel-based approach likely results in excessive seamlines in the ortho-rectified images due to the use of a quality measure on the pixel-by-pixel rating basis. In this paper, we proposed innovative solutions to tackle the aforementioned problems. For visibility analysis, an elevation buffer technique is introduced to employ the plain elevations instead of the distances from perspective centers by z-buffer, and has the advantage of sensor independency. A segment oriented strategy is developed to evaluate a plain cost measure per segment for occlusion compensation instead of the tedious quality rating per pixel. The cost measure directly evaluates the imaging geometry characteristics in ground space, and is also sensor independent. Experimental results are demonstrated using aerial photos acquired by UltraCam camera.

On Certain New Methodology for Reducing Sensor and Readout Electronics Circuitry Noise in Digital Domain

NASA Technical Reports Server (NTRS)

Kizhner, Semion; Miko, Joseph; Bradley, Damon; Heinzen, Katherine

2008-01-01

NASA Hubble Space Telescope (HST) and upcoming cosmology science missions carry instruments with multiple focal planes populated with many large sensor detector arrays. These sensors are passively cooled to low temperatures for low-level light (L3) and near-infrared (NIR) signal detection, and the sensor readout electronics circuitry must perform at extremely low noise levels to enable new required science measurements. Because we are at the technological edge of enhanced performance for sensors and readout electronics circuitry, as determined by thermal noise level at given temperature in analog domain, we must find new ways of further compensating for the noise in the signal digital domain. To facilitate this new approach, state-of-the-art sensors are augmented at their array hardware boundaries by non-illuminated reference pixels, which can be used to reduce noise attributed to sensors. There are a few proposed methodologies of processing in the digital domain the information carried by reference pixels, as employed by the Hubble Space Telescope and the James Webb Space Telescope Projects. These methods involve using spatial and temporal statistical parameters derived from boundary reference pixel information to enhance the active (non-reference) pixel signals. To make a step beyond this heritage methodology, we apply the NASA-developed technology known as the Hilbert- Huang Transform Data Processing System (HHT-DPS) for reference pixel information processing and its utilization in reconfigurable hardware on-board a spaceflight instrument or post-processing on the ground. The methodology examines signal processing for a 2-D domain, in which high-variance components of the thermal noise are carried by both active and reference pixels, similar to that in processing of low-voltage differential signals and subtraction of a single analog reference pixel from all active pixels on the sensor. Heritage methods using the aforementioned statistical parameters in the digital domain (such as statistical averaging of the reference pixels themselves) zeroes out the high-variance components, and the counterpart components in the active pixels remain uncorrected. This paper describes how the new methodology was demonstrated through analysis of fast-varying noise components using the Hilbert-Huang Transform Data Processing System tool (HHT-DPS) developed at NASA and the high-level programming language MATLAB (Trademark of MathWorks Inc.), as well as alternative methods for correcting for the high-variance noise component, using an HgCdTe sensor data. The NASA Hubble Space Telescope data post-processing, as well as future deep-space cosmology projects on-board instrument data processing from all the sensor channels, would benefit from this effort.

MTF evaluation of white pixel sensors

NASA Astrophysics Data System (ADS)

Lindner, Albrecht; Atanassov, Kalin; Luo, Jiafu; Goma, Sergio

2015-01-01

We present a methodology to compare image sensors with traditional Bayer RGB layouts to sensors with alternative layouts containing white pixels. We focused on the sensors' resolving powers, which we measured in the form of a modulation transfer function for variations in both luma and chroma channels. We present the design of the test chart, the acquisition of images, the image analysis, and an interpretation of results. We demonstrate the approach at the example of two sensors that only differ in their color filter arrays. We confirmed that the sensor with white pixels and the corresponding demosaicing result in a higher resolving power in the luma channel, but a lower resolving power in the chroma channels when compared to the traditional Bayer sensor.

Fixed Pattern Noise pixel-wise linear correction for crime scene imaging CMOS sensor

NASA Astrophysics Data System (ADS)

Yang, Jie; Messinger, David W.; Dube, Roger R.; Ientilucci, Emmett J.

2017-05-01

Filtered multispectral imaging technique might be a potential method for crime scene documentation and evidence detection due to its abundant spectral information as well as non-contact and non-destructive nature. Low-cost and portable multispectral crime scene imaging device would be highly useful and efficient. The second generation crime scene imaging system uses CMOS imaging sensor to capture spatial scene and bandpass Interference Filters (IFs) to capture spectral information. Unfortunately CMOS sensors suffer from severe spatial non-uniformity compared to CCD sensors and the major cause is Fixed Pattern Noise (FPN). IFs suffer from "blue shift" effect and introduce spatial-spectral correlated errors. Therefore, Fixed Pattern Noise (FPN) correction is critical to enhance crime scene image quality and is also helpful for spatial-spectral noise de-correlation. In this paper, a pixel-wise linear radiance to Digital Count (DC) conversion model is constructed for crime scene imaging CMOS sensor. Pixel-wise conversion gain Gi,j and Dark Signal Non-Uniformity (DSNU) Zi,j are calculated. Also, conversion gain is divided into four components: FPN row component, FPN column component, defects component and effective photo response signal component. Conversion gain is then corrected to average FPN column and row components and defects component so that the sensor conversion gain is uniform. Based on corrected conversion gain and estimated image incident radiance from the reverse of pixel-wise linear radiance to DC model, corrected image spatial uniformity can be enhanced to 7 times as raw image, and the bigger the image DC value within its dynamic range, the better the enhancement.

Design and implementation of non-linear image processing functions for CMOS image sensor

NASA Astrophysics Data System (ADS)

Musa, Purnawarman; Sudiro, Sunny A.; Wibowo, Eri P.; Harmanto, Suryadi; Paindavoine, Michel

2012-11-01

Today, solid state image sensors are used in many applications like in mobile phones, video surveillance systems, embedded medical imaging and industrial vision systems. These image sensors require the integration in the focal plane (or near the focal plane) of complex image processing algorithms. Such devices must meet the constraints related to the quality of acquired images, speed and performance of embedded processing, as well as low power consumption. To achieve these objectives, low-level analog processing allows extracting the useful information in the scene directly. For example, edge detection step followed by a local maxima extraction will facilitate the high-level processing like objects pattern recognition in a visual scene. Our goal was to design an intelligent image sensor prototype achieving high-speed image acquisition and non-linear image processing (like local minima and maxima calculations). For this purpose, we present in this article the design and test of a 64×64 pixels image sensor built in a standard CMOS Technology 0.35 μm including non-linear image processing. The architecture of our sensor, named nLiRIC (non-Linear Rapid Image Capture), is based on the implementation of an analog Minima/Maxima Unit. This MMU calculates the minimum and maximum values (non-linear functions), in real time, in a 2×2 pixels neighbourhood. Each MMU needs 52 transistors and the pitch of one pixel is 40×40 mu m. The total area of the 64×64 pixels is 12.5mm2. Our tests have shown the validity of the main functions of our new image sensor like fast image acquisition (10K frames per second), minima/maxima calculations in less then one ms.

Pixel super resolution using wavelength scanning

DTIC Science & Technology

2016-04-08

the light source is adjusted to ~20 μW. The image sensor chip is a color CMOS sensor chip with a pixel size of 1.12 μm manufactured for cellphone...pitch (that is, ~ 1 μm in Figure 3a, using a CMOS sensor that has a 1.12-μm pixel pitch). For the same configuration depicted in Figure 3, utilizing...section). The a Lens-free raw holograms captured by 1.12 μm CMOS image sensor Field of view ≈ 20.5 mm2 Angle change directions for synthetic aperture

Median filters as a tool to determine dark noise thresholds in high resolution smartphone image sensors for scientific imaging

NASA Astrophysics Data System (ADS)

Igoe, Damien P.; Parisi, Alfio V.; Amar, Abdurazaq; Rummenie, Katherine J.

2018-01-01

An evaluation of the use of median filters in the reduction of dark noise in smartphone high resolution image sensors is presented. The Sony Xperia Z1 employed has a maximum image sensor resolution of 20.7 Mpixels, with each pixel having a side length of just over 1 μm. Due to the large number of photosites, this provides an image sensor with very high sensitivity but also makes them prone to noise effects such as hot-pixels. Similar to earlier research with older models of smartphone, no appreciable temperature effects were observed in the overall average pixel values for images taken in ambient temperatures between 5 °C and 25 °C. In this research, hot-pixels are defined as pixels with intensities above a specific threshold. The threshold is determined using the distribution of pixel values of a set of images with uniform statistical properties associated with the application of median-filters of increasing size. An image with uniform statistics was employed as a training set from 124 dark images, and the threshold was determined to be 9 digital numbers (DN). The threshold remained constant for multiple resolutions and did not appreciably change even after a year of extensive field use and exposure to solar ultraviolet radiation. Although the temperature effects' uniformity masked an increase in hot-pixel occurrences, the total number of occurrences represented less than 0.1% of the total image. Hot-pixels were removed by applying a median filter, with an optimum filter size of 7 × 7; similar trends were observed for four additional smartphone image sensors used for validation. Hot-pixels were also reduced by decreasing image resolution. The method outlined in this research provides a methodology to characterise the dark noise behavior of high resolution image sensors for use in scientific investigations, especially as pixel sizes decrease.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Recent developments in OLED-based chemical and biological sensors

NASA Astrophysics Data System (ADS)

Shinar, Joseph; Zhou, Zhaoqun; Cai, Yuankun; Shinar, Ruth

2007-09-01

Recent developments in the structurally integrated OLED-based platform of luminescent chemical and biological sensors are reviewed. In this platform, an array of OLED pixels, which is structurally integrated with the sensing elements, is used as the photoluminescence (PL) excitation source. The structural integration is achieved by fabricating the OLED array and the sensing element on opposite sides of a common glass substrate or on two glass substrates that are attached back-to-back. As it does not require optical fibers, lens, or mirrors, it results in a uniquely simple, low-cost, and potentially rugged geometry. The recent developments on this platform include the following: (1) Enhancing the performance of gas-phase and dissolved oxygen sensors. This is achieved by (a) incorporating high-dielectric TiO II nanoparticles in the oxygen-sensitive Pt and Pd octaethylporphyrin (PtOEP and PdOEP, respectively)- doped polystyrene (PS) sensor films, and (b) embedding the oxygen-sensitive dyes in a matrix of polymer blends such as PS:polydimethylsiloxane (PDMS). (2) Developing sensor arrays for simultaneous detection of multiple serum analytes, including oxygen, glucose, lactate, and alcohol. The sensing element for each analyte consists of a PtOEP-doped PS oxygen sensor, and a solution containing the oxidase enzyme specific to the analyte. Each sensing element is coupled to two individually addressable OLED pixels and a Si photodiode photodetector (PD). (3) Enhancing the integration of the platform, whereby a PD array is also structurally integrated with the OLED array and sensing elements. This enhanced integration is achieved by fabricating an array of amorphous or nanocrystalline Si-based PDs, followed by fabrication of the OLED pixels in the gaps between these Si PDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame,more » in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.« less

Precise color images a high-speed color video camera system with three intensified sensors

NASA Astrophysics Data System (ADS)

Oki, Sachio; Yamakawa, Masafumi; Gohda, Susumu; Etoh, Takeharu G.

1999-06-01

High speed imaging systems have been used in a large field of science and engineering. Although the high speed camera systems have been improved to high performance, most of their applications are only to get high speed motion pictures. However, in some fields of science and technology, it is useful to get some other information, such as temperature of combustion flame, thermal plasma and molten materials. Recent digital high speed video imaging technology should be able to get such information from those objects. For this purpose, we have already developed a high speed video camera system with three-intensified-sensors and cubic prism image splitter. The maximum frame rate is 40,500 pps (picture per second) at 64 X 64 pixels and 4,500 pps at 256 X 256 pixels with 256 (8 bit) intensity resolution for each pixel. The camera system can store more than 1,000 pictures continuously in solid state memory. In order to get the precise color images from this camera system, we need to develop a digital technique, which consists of a computer program and ancillary instruments, to adjust displacement of images taken from two or three image sensors and to calibrate relationship between incident light intensity and corresponding digital output signals. In this paper, the digital technique for pixel-based displacement adjustment are proposed. Although the displacement of the corresponding circle was more than 8 pixels in original image, the displacement was adjusted within 0.2 pixels at most by this method.

The analysis and rationale behind the upgrading of existing standard definition thermal imagers to high definition

NASA Astrophysics Data System (ADS)

Goss, Tristan M.

2016-05-01

With 640x512 pixel format IR detector arrays having been on the market for the past decade, Standard Definition (SD) thermal imaging sensors have been developed and deployed across the world. Now with 1280x1024 pixel format IR detector arrays becoming readily available designers of thermal imager systems face new challenges as pixel sizes reduce and the demand and applications for High Definition (HD) thermal imaging sensors increases. In many instances the upgrading of existing under-sampled SD thermal imaging sensors into more optimally sampled or oversampled HD thermal imaging sensors provides a more cost effective and reduced time to market option than to design and develop a completely new sensor. This paper presents the analysis and rationale behind the selection of the best suited HD pixel format MWIR detector for the upgrade of an existing SD thermal imaging sensor to a higher performing HD thermal imaging sensor. Several commercially available and "soon to be" commercially available HD small pixel IR detector options are included as part of the analysis and are considered for this upgrade. The impact the proposed detectors have on the sensor's overall sensitivity, noise and resolution is analyzed, and the improved range performance is predicted. Furthermore with reduced dark currents due to the smaller pixel sizes, the candidate HD MWIR detectors are operated at higher temperatures when compared to their SD predecessors. Therefore, as an additional constraint and as a design goal, the feasibility of achieving upgraded performance without any increase in the size, weight and power consumption of the thermal imager is discussed herein.

Spectral characterisation and noise performance of Vanilla—an active pixel sensor

NASA Astrophysics Data System (ADS)

Blue, Andrew; Bates, R.; Bohndiek, S. E.; Clark, A.; Arvanitis, Costas D.; Greenshaw, T.; Laing, A.; Maneuski, D.; Turchetta, R.; O'Shea, V.

2008-06-01

This work will report on the characterisation of a new active pixel sensor, Vanilla. The Vanilla comprises of 512×512 (25μm 2) pixels. The sensor has a 12 bit digital output for full-frame mode, although it can also be readout in analogue mode, whereby it can also be read in a fully programmable region-of-interest (ROI) mode. In full frame, the sensor can operate at a readout rate of more than 100 frames per second (fps), while in ROI mode, the speed depends on the size, shape and number of ROIs. For example, an ROI of 6×6 pixels can be read at 20,000 fps in analogue mode. Using photon transfer curve (PTC) measurements allowed for the calculation of the read noise, shot noise, full-well capacity and camera gain constant of the sensor. Spectral response measurements detailed the quantum efficiency (QE) of the detector through the UV and visible region. Analysis of the ROI readout mode was also performed. Such measurements suggest that the Vanilla APS (active pixel sensor) will be suitable for a wide range of applications including particle physics and medical imaging.

Assessment and Prediction of Natural Hazards from Satellite Imagery

PubMed Central

Gillespie, Thomas W.; Chu, Jasmine; Frankenberg, Elizabeth; Thomas, Duncan

2013-01-01

Since 2000, there have been a number of spaceborne satellites that have changed the way we assess and predict natural hazards. These satellites are able to quantify physical geographic phenomena associated with the movements of the earth’s surface (earthquakes, mass movements), water (floods, tsunamis, storms), and fire (wildfires). Most of these satellites contain active or passive sensors that can be utilized by the scientific community for the remote sensing of natural hazards over a number of spatial and temporal scales. The most useful satellite imagery for the assessment of earthquake damage comes from high-resolution (0.6 m to 1 m pixel size) passive sensors and moderate resolution active sensors that can quantify the vertical and horizontal movement of the earth’s surface. High-resolution passive sensors have been used to successfully assess flood damage while predictive maps of flood vulnerability areas are possible based on physical variables collected from passive and active sensors. Recent moderate resolution sensors are able to provide near real time data on fires and provide quantitative data used in fire behavior models. Limitations currently exist due to atmospheric interference, pixel resolution, and revisit times. However, a number of new microsatellites and constellations of satellites will be launched in the next five years that contain increased resolution (0.5 m to 1 m pixel resolution for active sensors) and revisit times (daily ≤ 2.5 m resolution images from passive sensors) that will significantly improve our ability to assess and predict natural hazards from space. PMID:25170186

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout †

PubMed Central

Ni, Yang

2018-01-01

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout. PMID:29443903

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout.

PubMed

Ni, Yang

2018-02-14

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout.

Noise characterization of a 512×16 spad line sensor for time-resolved spectroscopy applications

NASA Astrophysics Data System (ADS)

Finlayson, Neil; Usai, Andrea; Erdogan, Ahmet T.; Henderson, Robert K.

2018-02-01

Time-resolved spectroscopy in the presence of noise is challenging. We have developed a new 512 pixel line sensor with 16 single-photon-avalanche (SPAD) detectors per pixel and ultrafast in-pixel time-correlated single photon counting (TCSPC) histogramming for such applications. SPADs are near shot noise limited detectors but we are still faced with the problem of high dark count rate (DCR) SPADs. The noisiest SPADs can be switched off to optimise signal-to-noiseratios (SNR) at the expense of longer acquisition/exposure times than would be possible if more SPADs were exploited. Here we present detailed noise characterization of our array. We build a DCR map for the sensor and demonstrate the effect of switching off the noisiest SPADs in each pixel. 24% percent of SPADs in the array are measured to have DCR in excess of 1kHz, while the best SPAD selection per pixel reduces DCR to 53+/-7Hz across the entire array. We demonstrate that selection of the lowest DCR SPAD in each pixel leads to the emergence of sparse spatial sampling noise in the sensor.

Spectral Analysis of the Primary Flight Focal Plane Arrays for the Thermal Infrared Sensor

NASA Technical Reports Server (NTRS)

Montanaro, Matthew; Reuter, Dennis C.; Markham, Brian L.; Thome, Kurtis J.; Lunsford, Allen W.; Jhabvala, Murzy D.; Rohrbach, Scott O.; Gerace, Aaron D.

2011-01-01

Thermal Infrared Sensor (TIRS) is a (1) New longwave infrared (10 - 12 micron) sensor for the Landsat Data Continuity Mission, (2) 185 km ground swath; 100 meter pixel size on ground, (3) Pushbroom sensor configuration. Issue of Calibration are: (1) Single detector -- only one calibration, (2) Multiple detectors - unique calibration for each detector -- leads to pixel-to-pixel artifacts. Objectives are: (1) Predict extent of residual striping when viewing a uniform blackbody target through various atmospheres, (2) Determine how different spectral shapes affect the derived surface temperature in a realistic synthetic scene.

High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izadi, Mohammad Hadi; Karim, Karim S.

2006-05-15

The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, small PPS output signals are swamped by external column charge amplifier and data line thermal noise, which reduce the minimum readable sensor input signal. In contrast to PPS circuits, on-pixel amplifiers in a-Si technology reduce readout noise to levels that can meet even the stringent requirements for low noise digital x-ray fluoroscopy (<1000 noise electrons). However, larger voltagesmore » at the pixel input cause the output of the amplified pixel to become nonlinear thus reducing the dynamic range. We reported a hybrid amplified pixel architecture based on a combination of PPS and amplified pixel designs that, in addition to low noise performance, also resulted in large-signal linearity and consequently higher dynamic range [K. S. Karim et al., Proc. SPIE 5368, 657 (2004)]. The additional benefit in large-signal linearity, however, came at the cost of an additional pixel transistor. We present an amplified pixel design that achieves the goals of low noise performance and large-signal linearity without the need for an additional pixel transistor. Theoretical calculations and simulation results for noise indicate the applicability of the amplified a-Si pixel architecture for high dynamic range, medical x-ray imaging applications that require switching between low exposure, real-time fluoroscopy and high-exposure radiography.« less

Coded aperture detector: an image sensor with sub 20-nm pixel resolution.

PubMed

Miyakawa, Ryan; Mayer, Rafael; Wojdyla, Antoine; Vannier, Nicolas; Lesser, Ian; Aron-Dine, Shifrah; Naulleau, Patrick

2014-08-11

We describe the coded aperture detector, a novel image sensor based on uniformly redundant arrays (URAs) with customizable pixel size, resolution, and operating photon energy regime. In this sensor, a coded aperture is scanned laterally at the image plane of an optical system, and the transmitted intensity is measured by a photodiode. The image intensity is then digitally reconstructed using a simple convolution. We present results from a proof-of-principle optical prototype, demonstrating high-fidelity image sensing comparable to a CCD. A 20-nm half-pitch URA fabricated by the Center for X-ray Optics (CXRO) nano-fabrication laboratory is presented that is suitable for high-resolution image sensing at EUV and soft X-ray wavelengths.

Time-of-flight camera via a single-pixel correlation image sensor

NASA Astrophysics Data System (ADS)

Mao, Tianyi; Chen, Qian; He, Weiji; Dai, Huidong; Ye, Ling; Gu, Guohua

2018-04-01

A time-of-flight imager based on single-pixel correlation image sensors is proposed for noise-free depth map acquisition in presence of ambient light. Digital micro-mirror device and time-modulated IR-laser provide spatial and temporal illumination on the unknown object. Compressed sensing and ‘four bucket principle’ method are combined to reconstruct the depth map from a sequence of measurements at a low sampling rate. Second-order correlation transform is also introduced to reduce the noise from the detector itself and direct ambient light. Computer simulations are presented to validate the computational models and improvement of reconstructions.

Photon small-field measurements with a CMOS active pixel sensor.

PubMed

Spang, F Jiménez; Rosenberg, I; Hedin, E; Royle, G

2015-06-07

In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm(2). The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

How Many Pixels Does It Take to Make a Good 4"×6" Print? Pixel Count Wars Revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

Digital still cameras emerged following the introduction of the Sony Mavica analog prototype camera in 1981. These early cameras produced poor image quality and did not challenge film cameras for overall quality. By 1995 digital still cameras in expensive SLR formats had 6 mega-pixels and produced high quality images (with significant image processing). In 2005 significant improvement in image quality was apparent and lower prices for digital still cameras (DSCs) started a rapid decline in film usage and film camera sells. By 2010 film usage was mostly limited to professionals and the motion picture industry. The rise of DSCs was marked by a “pixel war” where the driving feature of the cameras was the pixel count where even moderate cost, ˜120, DSCs would have 14 mega-pixels. The improvement of CMOS technology pushed this trend of lower prices and higher pixel counts. Only the single lens reflex cameras had large sensors and large pixels. The drive for smaller pixels hurt the quality aspects of the final image (sharpness, noise, speed, and exposure latitude). Only today are camera manufactures starting to reverse their course and producing DSCs with larger sensors and pixels. This paper will explore why larger pixels and sensors are key to the future of DSCs.

The effect of split pixel HDR image sensor technology on MTF measurements

NASA Astrophysics Data System (ADS)

Deegan, Brian M.

2014-03-01

Split-pixel HDR sensor technology is particularly advantageous in automotive applications, because the images are captured simultaneously rather than sequentially, thereby reducing motion blur. However, split pixel technology introduces artifacts in MTF measurement. To achieve a HDR image, raw images are captured from both large and small sub-pixels, and combined to make the HDR output. In some cases, a large sub-pixel is used for long exposure captures, and a small sub-pixel for short exposures, to extend the dynamic range. The relative size of the photosensitive area of the pixel (fill factor) plays a very significant role in the output MTF measurement. Given an identical scene, the MTF will be significantly different, depending on whether you use the large or small sub-pixels i.e. a smaller fill factor (e.g. in the short exposure sub-pixel) will result in higher MTF scores, but significantly greater aliasing. Simulations of split-pixel sensors revealed that, when raw images from both sub-pixels are combined, there is a significant difference in rising edge (i.e. black-to-white transition) and falling edge (white-to-black) reproduction. Experimental results showed a difference of ~50% in measured MTF50 between the falling and rising edges of a slanted edge test chart.

Motion camera based on a custom vision sensor and an FPGA architecture

NASA Astrophysics Data System (ADS)

Arias-Estrada, Miguel

1998-09-01

A digital camera for custom focal plane arrays was developed. The camera allows the test and development of analog or mixed-mode arrays for focal plane processing. The camera is used with a custom sensor for motion detection to implement a motion computation system. The custom focal plane sensor detects moving edges at the pixel level using analog VLSI techniques. The sensor communicates motion events using the event-address protocol associated to a temporal reference. In a second stage, a coprocessing architecture based on a field programmable gate array (FPGA) computes the time-of-travel between adjacent pixels. The FPGA allows rapid prototyping and flexible architecture development. Furthermore, the FPGA interfaces the sensor to a compact PC computer which is used for high level control and data communication to the local network. The camera could be used in applications such as self-guided vehicles, mobile robotics and smart surveillance systems. The programmability of the FPGA allows the exploration of further signal processing like spatial edge detection or image segmentation tasks. The article details the motion algorithm, the sensor architecture, the use of the event- address protocol for velocity vector computation and the FPGA architecture used in the motion camera system.

Methods for gas detection using stationary hyperspectral imaging sensors

DOEpatents

Conger, James L [San Ramon, CA; Henderson, John R [Castro Valley, CA

2012-04-24

According to one embodiment, a method comprises producing a first hyperspectral imaging (HSI) data cube of a location at a first time using data from a HSI sensor; producing a second HSI data cube of the same location at a second time using data from the HSI sensor; subtracting on a pixel-by-pixel basis the second HSI data cube from the first HSI data cube to produce a raw difference cube; calibrating the raw difference cube to produce a calibrated raw difference cube; selecting at least one desired spectral band based on a gas of interest; producing a detection image based on the at least one selected spectral band and the calibrated raw difference cube; examining the detection image to determine presence of the gas of interest; and outputting a result of the examination. Other methods, systems, and computer program products for detecting the presence of a gas are also described.

Impact of LANDSAT MSS sensor differences on change detection analysis

NASA Technical Reports Server (NTRS)

Likens, W. C.; Wrigley, R. C.

1983-01-01

Some 512 by 512 pixel subwindows for simultaneously acquired scene pairs obtained by LANDSAT 2,3 and 4 multispectral band scanners were coregistered using LANDSAT 4 scenes as the base to which the other images were registered. Scattergrams between the coregistered scenes (a form of contingency analysis) were used to radiometrically compare data from the various sensors. Mode values were derived and used to visually fit a linear regression. Root mean square errors of the registration varied between .1 and 1.5 pixels. There appear to be no major problem preventing the use of LANDSAT 4 MSS with previous MSS sensors for change detection, provided the noise interference can be removed or minimized. Data normalizations for change detection should be based on the data rather than solely on calibration information. This allows simultaneous normalization of the atmosphere as well as the radiometry.

Single Photon Counting Performance and Noise Analysis of CMOS SPAD-Based Image Sensors.

PubMed

Dutton, Neale A W; Gyongy, Istvan; Parmesan, Luca; Henderson, Robert K

2016-07-20

SPAD-based solid state CMOS image sensors utilising analogue integrators have attained deep sub-electron read noise (DSERN) permitting single photon counting (SPC) imaging. A new method is proposed to determine the read noise in DSERN image sensors by evaluating the peak separation and width (PSW) of single photon peaks in a photon counting histogram (PCH). The technique is used to identify and analyse cumulative noise in analogue integrating SPC SPAD-based pixels. The DSERN of our SPAD image sensor is exploited to confirm recent multi-photon threshold quanta image sensor (QIS) theory. Finally, various single and multiple photon spatio-temporal oversampling techniques are reviewed.

Wafer-scale pixelated detector system

DOEpatents

Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

2017-10-17

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

PubMed Central

Hirvonen, Liisa M.; Suhling, Klaus

2016-01-01

Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications. PMID:27136556

Lensfree on-chip microscopy over a wide field-of-view using pixel super-resolution

PubMed Central

Bishara, Waheb; Su, Ting-Wei; Coskun, Ahmet F.; Ozcan, Aydogan

2010-01-01

We demonstrate lensfree holographic microscopy on a chip to achieve ~0.6 µm spatial resolution corresponding to a numerical aperture of ~0.5 over a large field-of-view of ~24 mm2. By using partially coherent illumination from a large aperture (~50 µm), we acquire lower resolution lensfree in-line holograms of the objects with unit fringe magnification. For each lensfree hologram, the pixel size at the sensor chip limits the spatial resolution of the reconstructed image. To circumvent this limitation, we implement a sub-pixel shifting based super-resolution algorithm to effectively recover much higher resolution digital holograms of the objects, permitting sub-micron spatial resolution to be achieved across the entire sensor chip active area, which is also equivalent to the imaging field-of-view (24 mm2) due to unit magnification. We demonstrate the success of this pixel super-resolution approach by imaging patterned transparent substrates, blood smear samples, as well as Caenoharbditis Elegans. PMID:20588977

Image Segmentation Analysis for NASA Earth Science Applications

NASA Technical Reports Server (NTRS)

Tilton, James C.

2010-01-01

NASA collects large volumes of imagery data from satellite-based Earth remote sensing sensors. Nearly all of the computerized image analysis of this data is performed pixel-by-pixel, in which an algorithm is applied directly to individual image pixels. While this analysis approach is satisfactory in many cases, it is usually not fully effective in extracting the full information content from the high spatial resolution image data that s now becoming increasingly available from these sensors. The field of object-based image analysis (OBIA) has arisen in recent years to address the need to move beyond pixel-based analysis. The Recursive Hierarchical Segmentation (RHSEG) software developed by the author is being used to facilitate moving from pixel-based image analysis to OBIA. The key unique aspect of RHSEG is that it tightly intertwines region growing segmentation, which produces spatially connected region objects, with region object classification, which groups sets of region objects together into region classes. No other practical, operational image segmentation approach has this tight integration of region growing object finding with region classification This integration is made possible by the recursive, divide-and-conquer implementation utilized by RHSEG, in which the input image data is recursively subdivided until the image data sections are small enough to successfully mitigat the combinatorial explosion caused by the need to compute the dissimilarity between each pair of image pixels. RHSEG's tight integration of region growing object finding and region classification is what enables the high spatial fidelity of the image segmentations produced by RHSEG. This presentation will provide an overview of the RHSEG algorithm and describe how it is currently being used to support OBIA or Earth Science applications such as snow/ice mapping and finding archaeological sites from remotely sensed data.

Demonstration of the CDMA-mode CAOS smart camera.

PubMed

Riza, Nabeel A; Mazhar, Mohsin A

2017-12-11

Demonstrated is the code division multiple access (CDMA)-mode coded access optical sensor (CAOS) smart camera suited for bright target scenarios. Deploying a silicon CMOS sensor and a silicon point detector within a digital micro-mirror device (DMD)-based spatially isolating hybrid camera design, this smart imager first engages the DMD starring mode with a controlled factor of 200 high optical attenuation of the scene irradiance to provide a classic unsaturated CMOS sensor-based image for target intelligence gathering. Next, this CMOS sensor provided image data is used to acquire a focused zone more robust un-attenuated true target image using the time-modulated CDMA-mode of the CAOS camera. Using four different bright light test target scenes, successfully demonstrated is a proof-of-concept visible band CAOS smart camera operating in the CDMA-mode using up-to 4096 bits length Walsh design CAOS pixel codes with a maximum 10 KHz code bit rate giving a 0.4096 seconds CAOS frame acquisition time. A 16-bit analog-to-digital converter (ADC) with time domain correlation digital signal processing (DSP) generates the CDMA-mode images with a 3600 CAOS pixel count and a best spatial resolution of one micro-mirror square pixel size of 13.68 μm side. The CDMA-mode of the CAOS smart camera is suited for applications where robust high dynamic range (DR) imaging is needed for un-attenuated un-spoiled bright light spectrally diverse targets.

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragone, Angelo; Kenney, Chris; Lozinskaya, Anastassiya

Here, we describe a multilayer stacked X-ray camera concept. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detectionmore » [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.« less

Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor

DOE PAGES

Dragone, Angelo; Kenney, Chris; Lozinskaya, Anastassiya; ...

2016-11-29

Here, we describe a multilayer stacked X-ray camera concept. This type of technology is called `4H' X-ray cameras, where 4H stands for high-Z (Z>30) sensor, high-resolution (less than 300 micron pixel pitch), high-speed (above 100 MHz), and high-energy (above 30 keV in photon energy). The components of the technology, similar to the popular two-dimensional (2D) hybrid pixelated array detectors, consists of GaAs:Cr sensors bonded to high-speed ASICs. 4H cameras based on GaAs also use integration mode of X-ray detection. The number of layers, on the order of ten, is smaller than an earlier configuration for single-photon-counting (SPC) mode of detectionmore » [1]. High-speed ASIC based on modification to the ePix family of ASIC is discussed. Applications in X-ray free electron lasers (XFELs), synchrotrons, medicine and non-destructive testing are possible.« less

Panoramic thermal imaging: challenges and tradeoffs

NASA Astrophysics Data System (ADS)

Aburmad, Shimon

2014-06-01

Over the past decade, we have witnessed a growing demand for electro-optical systems that can provide continuous 3600 coverage. Applications such as perimeter security, autonomous vehicles, and military warning systems are a few of the most common applications for panoramic imaging. There are several different technological approaches for achieving panoramic imaging. Solutions based on rotating elements do not provide continuous coverage as there is a time lag between updates. Continuous panoramic solutions either use "stitched" images from multiple adjacent sensors, or sophisticated optical designs which warp a panoramic view onto a single sensor. When dealing with panoramic imaging in the visible spectrum, high volume production and advancement of semiconductor technology has enabled the use of CMOS/CCD image sensors with a huge number of pixels, small pixel dimensions, and low cost devices. However, in the infrared spectrum, the growth of detector pixel counts, pixel size reduction, and cost reduction is taking place at a slower rate due to the complexity of the technology and limitations caused by the laws of physics. In this work, we will explore the challenges involved in achieving 3600 panoramic thermal imaging, and will analyze aspects such as spatial resolution, FOV, data complexity, FPA utilization, system complexity, coverage and cost of the different solutions. We will provide illustrations, calculations, and tradeoffs between three solutions evaluated by Opgal: A unique 3600 lens design using an LWIR XGA detector, stitching of three adjacent LWIR sensors equipped with a low distortion 1200 lens, and a fisheye lens with a HFOV of 180º and an XGA sensor.

The Design of Optical Sensor for the Pinhole/Occulter Facility

NASA Technical Reports Server (NTRS)

Greene, Michael E.

1990-01-01

Three optical sight sensor systems were designed, built and tested. Two optical lines of sight sensor system are capable of measuring the absolute pointing angle to the sun. The system is for use with the Pinhole/Occulter Facility (P/OF), a solar hard x ray experiment to be flown from Space Shuttle or Space Station. The sensor consists of a pinhole camera with two pairs of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the pinhole, track and hold circuitry for data reduction, an analog to digital converter, and a microcomputer. The deflection of the image center is calculated from these data using an approximation for the solar image. A second system consists of a pinhole camera with a pair of perpendicularly mounted linear photodiode arrays, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed. A third optical sensor system is capable of measuring the internal vibration of the P/OF between the mask and base. The system consists of a white light source, a mirror and a pair of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the mirror, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image and hence the vibration of the structure is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process.

PubMed

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-12

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke - . Readout noise under the highest pixel gain condition is 1 e - with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7", 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process †

PubMed Central

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-01

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke−. Readout noise under the highest pixel gain condition is 1 e− with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7”, 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach. PMID:29329210

Monolithic Active Pixel Sensors

NASA Astrophysics Data System (ADS)

Lutz, P.

In close collaboration with the group from Strasbourg, Saclay has been developing fast monolithic active pixel sensors for future vertex detectors. This presentation gives some recent results from the MIMOSA serie, emphazising the participation of the group.

CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography.

PubMed

Esposito, M; Anaxagoras, T; Evans, P M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Poludniowski, G; Price, T; Waltham, C; Allinson, N M

2015-06-03

Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

The Multidimensional Integrated Intelligent Imaging project (MI-3)

NASA Astrophysics Data System (ADS)

Allinson, N.; Anaxagoras, T.; Aveyard, J.; Arvanitis, C.; Bates, R.; Blue, A.; Bohndiek, S.; Cabello, J.; Chen, L.; Chen, S.; Clark, A.; Clayton, C.; Cook, E.; Cossins, A.; Crooks, J.; El-Gomati, M.; Evans, P. M.; Faruqi, W.; French, M.; Gow, J.; Greenshaw, T.; Greig, T.; Guerrini, N.; Harris, E. J.; Henderson, R.; Holland, A.; Jeyasundra, G.; Karadaglic, D.; Konstantinidis, A.; Liang, H. X.; Maini, K. M. S.; McMullen, G.; Olivo, A.; O'Shea, V.; Osmond, J.; Ott, R. J.; Prydderch, M.; Qiang, L.; Riley, G.; Royle, G.; Segneri, G.; Speller, R.; Symonds-Tayler, J. R. N.; Triger, S.; Turchetta, R.; Venanzi, C.; Wells, K.; Zha, X.; Zin, H.

2009-06-01

MI-3 is a consortium of 11 universities and research laboratories whose mission is to develop complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) and to apply these sensors to a range of imaging challenges. A range of sensors has been developed: On-Pixel Intelligent CMOS (OPIC)—designed for in-pixel intelligence; FPN—designed to develop novel techniques for reducing fixed pattern noise; HDR—designed to develop novel techniques for increasing dynamic range; Vanilla/PEAPS—with digital and analogue modes and regions of interest, which has also been back-thinned; Large Area Sensor (LAS)—a novel, stitched LAS; and eLeNA—which develops a range of low noise pixels. Applications being developed include autoradiography, a gamma camera system, radiotherapy verification, tissue diffraction imaging, X-ray phase-contrast imaging, DNA sequencing and electron microscopy.

Experience from the construction and operation of the STAR PXL detector

NASA Astrophysics Data System (ADS)

Greiner, L.; Anderssen, E. C.; Contin, G.; Schambach, J.; Silber, J.; Stezelberger, T.; Sun, X.; Szelezniak, M.; Vu, C.; Wieman, H. H.; Woodmansee, S.

2015-04-01

A new silicon based vertex detector called the Heavy Flavor Tracker (HFT) was installed at the Soleniodal Tracker At RHIC (STAR) experiment for the Relativistic Heavy Ion Collider (RHIC) 2014 heavy ion run to improve the vertex resolution and extend the measurement capabilities of STAR in the heavy flavor domain. The HFT consists of four concentric cylinders around the STAR interaction point composed of three different silicon detector technologies based on strips, pads and for the first time in an accelerator experiment CMOS monolithic active pixels (MAPS) . The two innermost layers at a radius of 2.8 cm and 8 cm from the beam line are constructed with 400 high resolution MAPS sensors arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors giving a total silicon area of 0.16 m2. Each sensor consists of a pixel array of nearly 1 million pixels with a pitch of 20.7 μm with column-level discriminators, zero-suppression circuitry and output buffer memory integrated into one silicon die with a sensitive area of ~ 3.8 cm2. The pixel (PXL) detector has a low power dissipation of 170 mW/cm2, which allows air cooling. This results in a global material budget of 0.5% radiation length per layer for detector used in this run. A novel mechanical approach to detector insertion allows for the installation and integration of the pixel sub detector within a 12 hour period during an on-going STAR run. The detector specifications, experience from the construction and operation, lessons learned and initial measurements of the PXL performance in the 200 GeV Au-Au run will be presented.

Architecture and applications of a high resolution gated SPAD image sensor

PubMed Central

Burri, Samuel; Maruyama, Yuki; Michalet, Xavier; Regazzoni, Francesco; Bruschini, Claudio; Charbon, Edoardo

2014-01-01

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be increased to 30% with the use of microlenses. For precise control of the exposure and for time-resolved imaging, we use fast global gating signals to define exposure windows as small as 4 ns. The uniformity of the gate edges location is ∼140 ps (FWHM) over the whole array, while in-pixel digital counting enables frame rates as high as 156 kfps. Currently, our camera is used as a highly sensitive sensor with high temporal resolution, for applications ranging from fluorescence lifetime measurements to fluorescence correlation spectroscopy and generation of true random numbers. PMID:25090572

A PFM-based MWIR DROIC employing off-pixel fine conversion of photocharge to digital using integrated column ADCs

NASA Astrophysics Data System (ADS)

Abbasi, S.; Galioglu, A.; Shafique, A.; Ceylan, O.; Yazici, M.; Gurbuz, Y.

2017-02-01

A 32x32 prototype of a digital readout IC (DROIC) for medium-wave infrared focal plane arrays (MWIR IR-FPAs) is presented. The DROIC employs in-pixel photocurrent to digital conversion based on a pulse frequency modulation (PFM) loop and boasts a novel feature of off-pixel residue conversion using 10-bit column SAR ADCs. The remaining charge at the end of integration in typical PFM based digital pixel sensors is usually wasted. Previous works employing in-pixel extended counting methods make use of extra memory and counters to convert this left-over charge to digital, thereby performing fine conversion of the incident photocurrent. This results in a low quantization noise and hence keeps the readout noise low. However, focal plane arrays (FPAs) with small pixel pitch are constrained in pixel area, which makes it difficult to benefit from in-pixel extended counting circuitry. Thus, in this work, a novel approach to measure the residue outside the pixel using column -parallel SAR ADCs has been proposed. Moreover, a modified version of the conventional PFM based pixel has been designed to help hold the residue charge and buffer it to the column ADC. In addition to the 2D array of pixels, the prototype consists of 32 SAR ADCs, a timing controller block and a memory block to buffer the residue data coming out of the ADCs. The prototype has been designed and fabricated in 90nm CMOS.

CMOS active pixel sensors response to low energy light ions

NASA Astrophysics Data System (ADS)

Spiriti, E.; Finck, Ch.; Baudot, J.; Divay, C.; Juliani, D.; Labalme, M.; Rousseau, M.; Salvador, S.; Vanstalle, M.; Agodi, C.; Cuttone, G.; De Napoli, M.; Romano, F.

2017-12-01

Recently CMOS active pixel sensors have been used in Hadrontherapy ions fragmentation cross section measurements. Their main goal is to reconstruct tracks generated by the non interacting primary ions or by the produced fragments. In this framework the sensors, unexpectedly, demonstrated the possibility to obtain also some informations that could contribute to the ion type identification. The present analysis shows a clear dependency in charge and number of pixels per cluster (pixels with a collected amount of charge above a given threshold) with both fragment atomic number Z and energy loss in the sensor. This information, in the FIRST (F ragmentation of I ons R elevant for S pace and T herapy) experiment, has been used in the overall particle identification analysis algorithm. The aim of this paper is to present the data analysis and the obtained results. An empirical model was developed, in this paper, that reproduce the cluster size as function of the deposited energy in the sensor.

Development of radiation tolerant monolithic active pixel sensors with fast column parallel read-out

NASA Astrophysics Data System (ADS)

Koziel, M.; Dorokhov, A.; Fontaine, J.-C.; De Masi, R.; Winter, M.

2010-12-01

Monolithic active pixel sensors (MAPS) [1] (Turchetta et al., 2001) are being developed at IPHC—Strasbourg to equip the EUDET telescope [2] (Haas, 2006) and vertex detectors for future high energy physics experiments, including the STAR upgrade at RHIC [3] (T.S. Collaboration, 2005) and the CBM experiment at FAIR/GSI [4] (Heuser, 2006). High granularity, low material budget and high read-out speed are systematically required for most applications, complemented, for some of them, with high radiation tolerance. A specific column-parallel architecture, implemented in the MIMOSA-22 sensor, was developed to achieve fast read-out MAPS. Previous studies of the front-end architecture integrated in this sensor, which includes in-pixel amplification, have shown that the fixed pattern noise increase consecutive to ionizing radiation can be controlled by means of a negative feedback [5] (Hu-Guo et al., 2008). However, an unexpected rise of the temporal noise was observed. A second version of this chip (MIMOSA-22bis) was produced in order to search for possible improvements of the radiation tolerance, regarding this type of noise. In this prototype, the feedback transistor was tuned in order to mitigate the sensitivity of the pixel to ionizing radiation. The performances of the pixels after irradiation were investigated for two types of feedback transistors: enclosed layout transistor (ELT) [6] (Snoeys et al., 2000) and "standard" transistor with either large or small transconductance. The noise performance of all test structures was studied in various conditions (expected in future experiments) regarding temperature, integration time and ionizing radiation dose. Test results are presented in this paper. Based on these observations, ideas for further improvement of the radiation tolerance of column parallel MAPS are derived.

A FPGA-based Cluster Finder for CMOS Monolithic Active Pixel Sensors of the MIMOSA-26 Family

NASA Astrophysics Data System (ADS)

Li, Qiyan; Amar-Youcef, S.; Doering, D.; Deveaux, M.; Fröhlich, I.; Koziel, M.; Krebs, E.; Linnik, B.; Michel, J.; Milanovic, B.; Müntz, C.; Stroth, J.; Tischler, T.

2014-06-01

CMOS Monolithic Active Pixel Sensors (MAPS) demonstrated excellent performances in the field of charged particle tracking. Among their strong points are an single point resolution few μm, a light material budget of 0.05% X0 in combination with a good radiation tolerance and high rate capability. Those features make the sensors a valuable technology for vertex detectors of various experiments in heavy ion and particle physics. To reduce the load on the event builders and future mass storage systems, we have developed algorithms suited for preprocessing and reducing the data streams generated by the MAPS. This real-time processing employs remaining free resources of the FPGAs of the readout controllers of the detector and complements the on-chip data reduction circuits of the MAPS.

High-speed imaging using CMOS image sensor with quasi pixel-wise exposure

NASA Astrophysics Data System (ADS)

Sonoda, T.; Nagahara, H.; Endo, K.; Sugiyama, Y.; Taniguchi, R.

2017-02-01

Several recent studies in compressive video sensing have realized scene capture beyond the fundamental trade-off limit between spatial resolution and temporal resolution using random space-time sampling. However, most of these studies showed results for higher frame rate video that were produced by simulation experiments or using an optically simulated random sampling camera, because there are currently no commercially available image sensors with random exposure or sampling capabilities. We fabricated a prototype complementary metal oxide semiconductor (CMOS) image sensor with quasi pixel-wise exposure timing that can realize nonuniform space-time sampling. The prototype sensor can reset exposures independently by columns and fix these amount of exposure by rows for each 8x8 pixel block. This CMOS sensor is not fully controllable via the pixels, and has line-dependent controls, but it offers flexibility when compared with regular CMOS or charge-coupled device sensors with global or rolling shutters. We propose a method to realize pseudo-random sampling for high-speed video acquisition that uses the flexibility of the CMOS sensor. We reconstruct the high-speed video sequence from the images produced by pseudo-random sampling using an over-complete dictionary.

Single Photon Counting Performance and Noise Analysis of CMOS SPAD-Based Image Sensors

PubMed Central

Dutton, Neale A. W.; Gyongy, Istvan; Parmesan, Luca; Henderson, Robert K.

2016-01-01

SPAD-based solid state CMOS image sensors utilising analogue integrators have attained deep sub-electron read noise (DSERN) permitting single photon counting (SPC) imaging. A new method is proposed to determine the read noise in DSERN image sensors by evaluating the peak separation and width (PSW) of single photon peaks in a photon counting histogram (PCH). The technique is used to identify and analyse cumulative noise in analogue integrating SPC SPAD-based pixels. The DSERN of our SPAD image sensor is exploited to confirm recent multi-photon threshold quanta image sensor (QIS) theory. Finally, various single and multiple photon spatio-temporal oversampling techniques are reviewed. PMID:27447643

Adaptive pixel-super-resolved lensfree in-line digital holography for wide-field on-chip microscopy.

PubMed

Zhang, Jialin; Sun, Jiasong; Chen, Qian; Li, Jiaji; Zuo, Chao

2017-09-18

High-resolution wide field-of-view (FOV) microscopic imaging plays an essential role in various fields of biomedicine, engineering, and physical sciences. As an alternative to conventional lens-based scanning techniques, lensfree holography provides a new way to effectively bypass the intrinsical trade-off between the spatial resolution and FOV of conventional microscopes. Unfortunately, due to the limited sensor pixel-size, unpredictable disturbance during image acquisition, and sub-optimum solution to the phase retrieval problem, typical lensfree microscopes only produce compromised imaging quality in terms of lateral resolution and signal-to-noise ratio (SNR). Here, we propose an adaptive pixel-super-resolved lensfree imaging (APLI) method which can solve, or at least partially alleviate these limitations. Our approach addresses the pixel aliasing problem by Z-scanning only, without resorting to subpixel shifting or beam-angle manipulation. Automatic positional error correction algorithm and adaptive relaxation strategy are introduced to enhance the robustness and SNR of reconstruction significantly. Based on APLI, we perform full-FOV reconstruction of a USAF resolution target (~29.85 mm 2 ) and achieve half-pitch lateral resolution of 770 nm, surpassing 2.17 times of the theoretical Nyquist-Shannon sampling resolution limit imposed by the sensor pixel-size (1.67µm). Full-FOV imaging result of a typical dicot root is also provided to demonstrate its promising potential applications in biologic imaging.

A 7 ke-SD-FWC 1.2 e-RMS Temporal Random Noise 128×256 Time-Resolved CMOS Image Sensor With Two In-Pixel SDs for Biomedical Applications.

PubMed

Seo, Min-Woong; Kawahito, Shoji

2017-12-01

A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.2e-rms at 20 fps with true correlated double sampling operation and fast intrinsic response less than 500 ps at 635 nm. The proposed imager has an effective pixel array of and a pixel size of . The sensor chip is fabricated by Dongbu HiTek 1P4M 0.11 CIS process.

Small Pixel Hybrid CMOS X-ray Detectors

NASA Astrophysics Data System (ADS)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

Retina-like sensor image coordinates transformation and display

NASA Astrophysics Data System (ADS)

Cao, Fengmei; Cao, Nan; Bai, Tingzhu; Song, Shengyu

2015-03-01

For a new kind of retina-like senor camera, the image acquisition, coordinates transformation and interpolation need to be realized. Both of the coordinates transformation and interpolation are computed in polar coordinate due to the sensor's particular pixels distribution. The image interpolation is based on sub-pixel interpolation and its relative weights are got in polar coordinates. The hardware platform is composed of retina-like senor camera, image grabber and PC. Combined the MIL and OpenCV library, the software program is composed in VC++ on VS 2010. Experience results show that the system can realizes the real-time image acquisition, coordinate transformation and interpolation.

Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Hanagaki, K.; Yajima, K.; Yamauchi, Y.; Hirose, M.; Homma, Y.; Jinnouchi, O.; Kimura, K.; Motohashi, K.; Sato, S.; Sawai, H.; Todome, K.; Yamaguchi, D.; Hara, K.; Sato, Kz.; Sato, Kj.; Hagihara, M.; Iwabuchi, S.

2016-09-01

We have developed n+-in-p pixel sensors to obtain highly radiation tolerant sensors for extremely high radiation environments such as those found at the high-luminosity LHC. We have designed novel pixel structures to eliminate the sources of efficiency loss under the bias rails after irradiation by removing the bias rail out of the boundary region and routing the bias resistors inside the area of the pixel electrodes. After irradiation by protons with the fluence of approximately 3 ×1015neq /cm2, the pixel structure with the polysilicon bias resistor and the bias rails removed far away from the boundary shows an efficiency loss of < 0.5 % per pixel at the boundary region, which is as efficient as the pixel structure without a biasing structure. The pixel structure with the bias rails at the boundary and the widened p-stop's underneath the bias rail also exhibits an improved loss of approximately 1% per pixel at the boundary region. We have elucidated the physical mechanisms behind the efficiency loss under the bias rail with TCAD simulations. The efficiency loss is due to the interplay of the bias rail acting as a charge collecting electrode with the region of low electric field in the silicon near the surface at the boundary. The region acts as a "shield" for the electrode. After irradiation, the strong applied electric field nearly eliminates the region. The TCAD simulations have shown that wide p-stop and large Si-SiO2 interface charge (inversion layer, specifically) act to shield the weighting potential. The pixel sensor of the old design irradiated by γ-rays at 2.4 MGy is confirmed to exhibit only a slight efficiency loss at the boundary.

A Dual-Mode Large-Arrayed CMOS ISFET Sensor for Accurate and High-Throughput pH Sensing in Biomedical Diagnosis.

PubMed

Huang, Xiwei; Yu, Hao; Liu, Xu; Jiang, Yu; Yan, Mei; Wu, Dongping

2015-09-01

The existing ISFET-based DNA sequencing detects hydrogen ions released during the polymerization of DNA strands on microbeads, which are scattered into microwell array above the ISFET sensor with unknown distribution. However, false pH detection happens at empty microwells due to crosstalk from neighboring microbeads. In this paper, a dual-mode CMOS ISFET sensor is proposed to have accurate pH detection toward DNA sequencing. Dual-mode sensing, optical and chemical modes, is realized by integrating a CMOS image sensor (CIS) with ISFET pH sensor, and is fabricated in a standard 0.18-μm CIS process. With accurate determination of microbead physical locations with CIS pixel by contact imaging, the dual-mode sensor can correlate local pH for one DNA slice at one location-determined microbead, which can result in improved pH detection accuracy. Moreover, toward a high-throughput DNA sequencing, a correlated-double-sampling readout that supports large array for both modes is deployed to reduce pixel-to-pixel nonuniformity such as threshold voltage mismatch. The proposed CMOS dual-mode sensor is experimentally examined to show a well correlated pH map and optical image for microbeads with a pH sensitivity of 26.2 mV/pH, a fixed pattern noise (FPN) reduction from 4% to 0.3%, and a readout speed of 1200 frames/s. A dual-mode CMOS ISFET sensor with suppressed FPN for accurate large-arrayed pH sensing is proposed and demonstrated with state-of-the-art measured results toward accurate and high-throughput DNA sequencing. The developed dual-mode CMOS ISFET sensor has great potential for future personal genome diagnostics with high accuracy and low cost.

Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

PubMed

Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

2015-04-21

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

An ultra-low power self-timed column-level ADC for a CMOS pixel sensor based vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Wang, M.

2014-11-01

The International Large Detector (ILD) is a detector concept for the future linear collider experiment. The vertex detector is the key tool to achieve high precision measurements for flavor tagging, which puts stringent requirements on the CMOS pixel sensors. Due to the cooling systems which deteriorate the material budget and increase the multiple scattering, it is important to reduce the power consumption. This paper presents an ultra-low power self-timed column-level ADC for the CMOS pixel sensors, aiming to equip the outer layers of the vertex detector. The ADC was designed to operate in two modes (active and idle) adapted to the low hit density in the outer layers. The architecture employs an enhanced sample-and-hold circuit and a self-timed technique. The total power consumption with a 3-V supply is 225μW during idle mode, which is the most frequent situation. This value rises to 425μW in the case of the active mode. It occupies an area of 35 × 590μm2.

Imaging system design and image interpolation based on CMOS image sensor

NASA Astrophysics Data System (ADS)

Li, Yu-feng; Liang, Fei; Guo, Rui

2009-11-01

An image acquisition system is introduced, which consists of a color CMOS image sensor (OV9620), SRAM (CY62148), CPLD (EPM7128AE) and DSP (TMS320VC5509A). The CPLD implements the logic and timing control to the system. SRAM stores the image data, and DSP controls the image acquisition system through the SCCB (Omni Vision Serial Camera Control Bus). The timing sequence of the CMOS image sensor OV9620 is analyzed. The imaging part and the high speed image data memory unit are designed. The hardware and software design of the image acquisition and processing system is given. CMOS digital cameras use color filter arrays to sample different spectral components, such as red, green, and blue. At the location of each pixel only one color sample is taken, and the other colors must be interpolated from neighboring samples. We use the edge-oriented adaptive interpolation algorithm for the edge pixels and bilinear interpolation algorithm for the non-edge pixels to improve the visual quality of the interpolated images. This method can get high processing speed, decrease the computational complexity, and effectively preserve the image edges.

Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method

NASA Astrophysics Data System (ADS)

Pelamatti, Alice; Goiffon, Vincent; Chabane, Aziouz; Magnan, Pierre; Virmontois, Cédric; Saint-Pé, Olivier; de Boisanger, Michel Breart

2016-11-01

The charge transfer time represents the bottleneck in terms of temporal resolution in Pinned Photodiode (PPD) CMOS image sensors. This work focuses on the modeling and estimation of this key parameter. A simple numerical model of charge transfer in PPDs is presented. The model is based on a Montecarlo simulation and takes into account both charge diffusion in the PPD and the effect of potential obstacles along the charge transfer path. This work also presents a new experimental approach for the estimation of the charge transfer time, called pulsed Storage Gate (SG) method. This method, which allows reproduction of a ;worst-case; transfer condition, is based on dedicated SG pixel structures and is particularly suitable to compare transfer efficiency performances for different pixel geometries.

Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade

NASA Astrophysics Data System (ADS)

Kim, D.; Aglieri Rinella, G.; Cavicchioli, C.; Chanlek, N.; Collu, A.; Degerli, Y.; Dorokhov, A.; Flouzat, C.; Gajanana, D.; Gao, C.; Guilloux, F.; Hillemanns, H.; Hristozkov, S.; Junique, A.; Keil, M.; Kofarago, M.; Kugathasan, T.; Kwon, Y.; Lattuca, A.; Mager, M.; Sielewicz, K. M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Pham, T. H.; Puggioni, C.; Reidt, F.; Riedler, P.; Rousset, J.; Siddhanta, S.; Snoeys, W.; Song, M.; Usai, G.; Van Hoorne, J. W.; Yang, P.

2016-02-01

ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m2 tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. First full-scale prototypes have been fabricated and tested. Radiation tolerance has also been verified. In this paper the development of the charge sensitive front end and in particular its optimization for uniformity of charge threshold and time response will be presented.

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Bio-Inspired Asynchronous Pixel Event Tricolor Vision Sensor.

PubMed

Lenero-Bardallo, Juan Antonio; Bryn, D H; Hafliger, Philipp

2014-06-01

This article investigates the potential of the first ever prototype of a vision sensor that combines tricolor stacked photo diodes with the bio-inspired asynchronous pixel event communication protocol known as Address Event Representation (AER). The stacked photo diodes are implemented in a 22 × 22 pixel array in a standard STM 90 nm CMOS process. Dynamic range is larger than 60 dB and pixels fill factor is 28%. The pixels employ either simple pulse frequency modulation (PFM) or a Time-to-First-Spike (TFS) mode. A heuristic linear combination of the chip's inherent pseudo colors serves to approximate RGB color representation. Furthermore, the sensor outputs can be processed to represent the radiation in the near infrared (NIR) band without employing external filters, and to color-encode direction of motion due to an asymmetry in the update rates of the different diode layers.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

Commercial CMOS image sensors as X-ray imagers and particle beam monitors

NASA Astrophysics Data System (ADS)

Castoldi, A.; Guazzoni, C.; Maffessanti, S.; Montemurro, G. V.; Carraresi, L.

2015-01-01

CMOS image sensors are widely used in several applications such as mobile handsets webcams and digital cameras among others. Furthermore they are available across a wide range of resolutions with excellent spectral and chromatic responses. In order to fulfill the need of cheap systems as beam monitors and high resolution image sensors for scientific applications we exploited the possibility of using commercial CMOS image sensors as X-rays and proton detectors. Two different sensors have been mounted and tested. An Aptina MT9v034, featuring 752 × 480 pixels, 6μm × 6μm pixel size has been mounted and successfully tested as bi-dimensional beam profile monitor, able to take pictures of the incoming proton bunches at the DeFEL beamline (1-6 MeV pulsed proton beam) of the LaBeC of INFN in Florence. The naked sensor is able to successfully detect the interactions of the single protons. The sensor point-spread-function (PSF) has been qualified with 1MeV protons and is equal to one pixel (6 mm) r.m.s. in both directions. A second sensor MT9M032, featuring 1472 × 1096 pixels, 2.2 × 2.2 μm pixel size has been mounted on a dedicated board as high-resolution imager to be used in X-ray imaging experiments with table-top generators. In order to ease and simplify the data transfer and the image acquisition the system is controlled by a dedicated micro-processor board (DM3730 1GHz SoC ARM Cortex-A8) on which a modified LINUX kernel has been implemented. The paper presents the architecture of the sensor systems and the results of the experimental measurements.

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

PubMed

Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

2009-01-01

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.

PubMed

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-12-05

A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e - /s at 60 °C, an ultra-low read noise of 0.90 e - ·rms, a high full well capacity (FWC) of 4100 e - , and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.

Ground Optical Signal Processing Architecture for Contributing SSA Space Based Sensor Data

NASA Astrophysics Data System (ADS)

Koblick, D.; Klug, M.; Goldsmith, A.; Flewelling, B.; Jah, M.; Shanks, J.; Piña, R.

2014-09-01

The main objective of the DARPA program Orbit Outlook (O^2) is to improve the metric tracking and detection performance of the Space Situational Network (SSN) by adding a diverse low-cost network of contributing sensors to the Space Situational Awareness (SSA) mission. In order to accomplish this objective, not only must a sensor be in constant communication with a planning and scheduling system to process tasking requests, there must be an underlying framework to provide useful data products, such as angles only measurements. Existing optical signal processing implementations such as the Optical Processing Architecture at Lincoln (OPAL) are capable of converting mission data collections to angles only observations, but may be difficult for many users to obtain, support, and customize for low-cost missions and demonstration programs. The Ground Optical Signal Processing Architecture (GOSPA) will ingest raw imagery and telemetry data from a space based electro optical sensor and perform a background removal process to remove anomalous pixels, interpolate over bad pixels, and dominant temporal noise. After background removal, the streak end points and target centroids are located using a corner detection algorithm developed by Air Force Research Laboratory. These identified streak locations are then fused with the corresponding spacecraft telemetry data to determine the Right Ascension and Declination measurements with respect to time. To demonstrate the performance of GOSPA, non-rate tracking collections against a satellite in Geosynchronous Orbit are simulated from a visible optical imaging sensor in a polar Low Earth Orbit. Stars, noise and bad pixels are added to the simulated images based on look angles and sensor parameters. These collections are run through the GOSPA framework to provide angles- only measurements to the Air Force Research Laboratory Constrained Admissible Region Multiple Hypothesis Filter (CAR-MHF) in which an Initial Orbit Determination is performed and compared to truth data.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

Modeling Charge Collection in Detector Arrays

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Pickel, J. C.

2003-01-01

A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

A neighbor pixel communication filtering structure for Dynamic Vision Sensors

NASA Astrophysics Data System (ADS)

Xu, Yuan; Liu, Shiqi; Lu, Hehui; Zhang, Zilong

2017-02-01

For Dynamic Vision Sensors (DVS), thermal noise and junction leakage current induced Background Activity (BA) is the major cause of the deterioration of images quality. Inspired by the smoothing filtering principle of horizontal cells in vertebrate retina, A DVS pixel with Neighbor Pixel Communication (NPC) filtering structure is proposed to solve this issue. The NPC structure is designed to judge the validity of pixel's activity through the communication between its 4 adjacent pixels. The pixel's outputs will be suppressed if its activities are determined not real. The proposed pixel's area is 23.76×24.71μm2 and only 3ns output latency is introduced. In order to validate the effectiveness of the structure, a 5×5 pixel array has been implemented in SMIC 0.13μm CIS process. 3 test cases of array's behavioral model show that the NPC-DVS have an ability of filtering the BA.

Characterisation of Vanilla—A novel active pixel sensor for radiation detection

NASA Astrophysics Data System (ADS)

Blue, A.; Bates, R.; Laing, A.; Maneuski, D.; O'Shea, V.; Clark, A.; Prydderch, M.; Turchetta, R.; Arvanitis, C.; Bohndiek, S.

2007-10-01

Novel features of a new monolithic active pixel sensor, Vanilla, with 520×520 pixels ( 25 μm square) has been characterised for the first time. Optimisation of the sensor operation was made through variation of frame rates, integration times and on-chip biases and voltages. Features such as flushed reset operation, ROI capturing and readout modes have been fully tested. Stability measurements were performed to test its suitablility for long-term applications. These results suggest the Vanilla sensor—along with bio-medical and space applications—is suitable for use in particle physics experiments.

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

Subpixel Mapping of Hyperspectral Image Based on Linear Subpixel Feature Detection and Object Optimization

NASA Astrophysics Data System (ADS)

Liu, Zhaoxin; Zhao, Liaoying; Li, Xiaorun; Chen, Shuhan

2018-04-01

Owing to the limitation of spatial resolution of the imaging sensor and the variability of ground surfaces, mixed pixels are widesperead in hyperspectral imagery. The traditional subpixel mapping algorithms treat all mixed pixels as boundary-mixed pixels while ignoring the existence of linear subpixels. To solve this question, this paper proposed a new subpixel mapping method based on linear subpixel feature detection and object optimization. Firstly, the fraction value of each class is obtained by spectral unmixing. Secondly, the linear subpixel features are pre-determined based on the hyperspectral characteristics and the linear subpixel feature; the remaining mixed pixels are detected based on maximum linearization index analysis. The classes of linear subpixels are determined by using template matching method. Finally, the whole subpixel mapping results are iteratively optimized by binary particle swarm optimization algorithm. The performance of the proposed subpixel mapping method is evaluated via experiments based on simulated and real hyperspectral data sets. The experimental results demonstrate that the proposed method can improve the accuracy of subpixel mapping.

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

A CMOS active pixel sensor for retinal stimulation

NASA Astrophysics Data System (ADS)

Prydderch, Mark L.; French, Marcus J.; Mathieson, Keith; Adams, Christopher; Gunning, Deborah; Laudanski, Jonathan; Morrison, James D.; Moodie, Alan R.; Sinclair, James

2006-02-01

Degenerative photoreceptor diseases, such as age-related macular degeneration and retinitis pigmentosa, are the most common causes of blindness in the western world. A potential cure is to use a microelectronic retinal prosthesis to provide electrical stimulation to the remaining healthy retinal cells. We describe a prototype CMOS Active Pixel Sensor capable of detecting a visual scene and translating it into a train of electrical pulses for stimulation of the retina. The sensor consists of a 10 x 10 array of 100 micron square pixels fabricated on a 0.35 micron CMOS process. Light incident upon each pixel is converted into output current pulse trains with a frequency related to the light intensity. These outputs are connected to a biocompatible microelectrode array for contact to the retinal cells. The flexible design allows experimentation with signal amplitudes and frequencies in order to determine the most appropriate stimulus for the retina. Neural processing in the retina can be studied by using the sensor in conjunction with a Field Programmable Gate Array (FPGA) programmed to behave as a neural network. The sensor has been integrated into a test system designed for studying retinal response. We present the most recent results obtained from this sensor.

Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers

NASA Astrophysics Data System (ADS)

Cheng, Mao-Hsun; Zhao, Chumin; Kanicki, Jerzy

2017-05-01

Current-mode active pixel sensor (C-APS) circuits based on amorphous indium-tin-zinc-oxide thin-film transistors (a-ITZO TFTs) are proposed for indirect X-ray imagers. The proposed C-APS circuits include a combination of a hydrogenated amorphous silicon (a-Si:H) p+-i-n+ photodiode (PD) and a-ITZO TFTs. Source-output (SO) and drain-output (DO) C-APS are investigated and compared. Acceptable signal linearity and high gains are realized for SO C-APS. APS circuit characteristics including voltage gain, charge gain, signal linearity, charge-to-current conversion gain, electron-to-voltage conversion gain are evaluated. The impact of the a-ITZO TFT threshold voltage shifts on C-APS is also considered. A layout for a pixel pitch of 50 μm and an associated fabrication process are suggested. Data line loadings for 4k-resolution X-ray imagers are computed and their impact on circuit performances is taken into consideration. Noise analysis is performed, showing a total input-referred noise of 239 e-.

Intelligent error correction method applied on an active pixel sensor based star tracker

NASA Astrophysics Data System (ADS)

Schmidt, Uwe

2005-10-01

Star trackers are opto-electronic sensors used on-board of satellites for the autonomous inertial attitude determination. During the last years star trackers became more and more important in the field of the attitude and orbit control system (AOCS) sensors. High performance star trackers are based up today on charge coupled device (CCD) optical camera heads. The active pixel sensor (APS) technology, introduced in the early 90-ties, allows now the beneficial replacement of CCD detectors by APS detectors with respect to performance, reliability, power, mass and cost. The company's heritage in star tracker design started in the early 80-ties with the launch of the worldwide first fully autonomous star tracker system ASTRO1 to the Russian MIR space station. Jena-Optronik recently developed an active pixel sensor based autonomous star tracker "ASTRO APS" as successor of the CCD based star tracker product series ASTRO1, ASTRO5, ASTRO10 and ASTRO15. Key features of the APS detector technology are, a true xy-address random access, the multiple windowing read out and the on-chip signal processing including the analogue to digital conversion. These features can be used for robust star tracking at high slew rates and under worse conditions like stray light and solar flare induced single event upsets. A special algorithm have been developed to manage the typical APS detector error contributors like fixed pattern noise (FPN), dark signal non-uniformity (DSNU) and white spots. The algorithm works fully autonomous and adapts to e.g. increasing DSNU and up-coming white spots automatically without ground maintenance or re-calibration. In contrast to conventional correction methods the described algorithm does not need calibration data memory like full image sized calibration data sets. The application of the presented algorithm managing the typical APS detector error contributors is a key element for the design of star trackers for long term satellite applications like geostationary telecom platforms.

Sensors for the CMS Forward Pixel Phase 1 Upgrade

NASA Astrophysics Data System (ADS)

Dilsiz, Kamuran; CMS Collaboration

2016-03-01

The next incarnation of the CMS forward pixel detector, to be installed during the year end extended technical stop 2016-17, will need to survive an integrated luminosity of 300 fb-1 with the inner radius of the active region of the disks decreasing from 6 to 4.5 cm. Based on the Run 1 experience and irradiation studies, the Phase 1 FPIX sensors will again be n-on-n DOFZ silicon, with parameters similar to those in the present run. We will review the design choices including a study during the prototyping phase to explore different p-stop layouts. Results from the quality assurance probing of the full production of sensor wafers will be described. The IV measurements are particularly impressive with current densities in range of 3-4 nA/cm2 at the full depletion voltage.

CVD diamond pixel detectors for LHC experiments

NASA Astrophysics Data System (ADS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J. C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.; RD42 Collaboration

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Fu, M.; Zhang, Y.; Yan, W.; Wang, M.

2017-01-01

The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm2.

3D track reconstruction capability of a silicon hybrid active pixel detector

NASA Astrophysics Data System (ADS)

Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri; Burian, Petr; Broulim, Pavel; Jakubek, Jan

2017-06-01

Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 × 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for "4D" particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation ( x, y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm.

The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

PubMed Central

Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

2016-01-01

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors.

PubMed

Kawahito, Shoji; Seo, Min-Woong

2016-11-06

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e - rms ) when compared with the CMS gain of two (2.4 e - rms ), or 16 (1.1 e - rms ).

Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors

PubMed Central

Kawahito, Shoji; Seo, Min-Woong

2016-01-01

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e−rms) when compared with the CMS gain of two (2.4 e−rms), or 16 (1.1 e−rms). PMID:27827972

Improved Space Object Orbit Determination Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

2014-09-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario a sensor in a sun-synchronous LEO orbit, always pointing in the anti-sun direction to achieve optimum illumination conditions for small LEO debris, was simulated. For the space-based scenario the simulations showed a 20 130 % improvement of the accuracy of all orbital parameters when varying the frame rate from 1/3 fps, which is the fastest rate for a typical CCD detector, to 50 fps, which represents the highest rate of scientific CMOS cameras. Changing the epoch registration accuracy from a typical 20.0 ms for a mechanical shutter to 0.025 ms, the theoretical value for the electronic shutter of a CMOS camera, improved the orbit accuracy by 4 to 190 %. The ground-based scenario also benefit from the specific CMOS characteristics, but to a lesser extent.

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Characterization of a hybrid energy-resolving photon-counting detector

NASA Astrophysics Data System (ADS)

Zang, A.; Pelzer, G.; Anton, G.; Ballabriga Sune, R.; Bisello, F.; Campbell, M.; Fauler, A.; Fiederle, M.; Llopart Cudie, X.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W. S.; Michel, T.

2014-03-01

Photon-counting detectors in medical x-ray imaging provide a higher dose efficiency than integrating detectors. Even further possibilities for imaging applications arise, if the energy of each photon counted is measured, as for example K-edge-imaging or optimizing image quality by applying energy weighting factors. In this contribution, we show results of the characterization of the Dosepix detector. This hybrid photon- counting pixel detector allows energy resolved measurements with a novel concept of energy binning included in the pixel electronics. Based on ideas of the Medipix detector family, it provides three different modes of operation: An integration mode, a photon-counting mode, and an energy-binning mode. In energy-binning mode, it is possible to set 16 energy thresholds in each pixel individually to derive a binned energy spectrum in every pixel in one acquisition. The hybrid setup allows using different sensor materials. For the measurements 300 μm Si and 1 mm CdTe were used. The detector matrix consists of 16 x 16 square pixels for CdTe (16 x 12 for Si) with a pixel pitch of 220 μm. The Dosepix was originally intended for applications in the field of radiation measurement. Therefore it is not optimized towards medical imaging. The detector concept itself still promises potential as an imaging detector. We present spectra measured in one single pixel as well as in the whole pixel matrix in energy-binning mode with a conventional x-ray tube. In addition, results concerning the count rate linearity for the different sensor materials are shown as well as measurements regarding energy resolution.

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications.

PubMed

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-12-29

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors' architecture on the basis of the type of electric measurement or imaging functionalities.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

2017-03-07

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

NASA Astrophysics Data System (ADS)

Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

2017-03-01

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Adaptive scene-based correction algorithm for removal of residual fixed pattern noise in microgrid image data

NASA Astrophysics Data System (ADS)

Ratliff, Bradley M.; LeMaster, Daniel A.

2012-06-01

Pixel-to-pixel response nonuniformity is a common problem that affects nearly all focal plane array sensors. This results in a frame-to-frame fixed pattern noise (FPN) that causes an overall degradation in collected data. FPN is often compensated for through the use of blackbody calibration procedures; however, FPN is a particularly challenging problem because the detector responsivities drift relative to one another in time, requiring that the sensor be recalibrated periodically. The calibration process is obstructive to sensor operation and is therefore only performed at discrete intervals in time. Thus, any drift that occurs between calibrations (along with error in the calibration sources themselves) causes varying levels of residual calibration error to be present in the data at all times. Polarimetric microgrid sensors are particularly sensitive to FPN due to the spatial differencing involved in estimating the Stokes vector images. While many techniques exist in the literature to estimate FPN for conventional video sensors, few have been proposed to address the problem in microgrid imaging sensors. Here we present a scene-based nonuniformity correction technique for microgrid sensors that is able to reduce residual fixed pattern noise while preserving radiometry under a wide range of conditions. The algorithm requires a low number of temporal data samples to estimate the spatial nonuniformity and is computationally efficient. We demonstrate the algorithm's performance using real data from the AFRL PIRATE and University of Arizona LWIR microgrid sensors.

Germanium ``hexa'' detector: production and testing

NASA Astrophysics Data System (ADS)

Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Hirsemann, H.; Struth, B.; Fritzsch, T.; Rothermund, M.; Zuvic, M.; Lampert, M. O.; Askar, M.; Graafsma, H.

2017-01-01

Here we present new result on the testing of a Germanium sensor for X-ray radiation. The system is made of 3 × 2 Medipix3RX chips, bump-bonded to a monolithic sensor, and is called ``hexa''. Its dimensions are 45 × 30 mm2 and the sensor thickness was 1.5 mm. The total number of the pixels is 393216 in the matrix 768 × 512 with pixel pitch 55 μ m. Medipix3RX read-out chip provides photon counting read-out with single photon sensitivity. The sensor is cooled to -126°C and noise levels together with flat field response are measured. For -200 V polarization bias, leakage current was 4.4 mA (3.2 μ A/mm2). Due to higher leakage around 2.5% of all pixels stay non-responsive. More than 99% of all pixels are bump bonded correctly. In this paper we present the experimental set-up, threshold equalization procedure, image acquisition and the technique for bump bond quality estimate.

A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Watabe, Toshihisa; Ohtake, Hiroshi; Sakai, Toshikatsu; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, Takashi

2011-02-01

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128×96 for each color, and the pixel size is 100×100 µm2. The current on/off ratio of the ZnO TFT is over 106, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.

New concept of a submillimetric pixellated Silicon detector for intracerebral application

NASA Astrophysics Data System (ADS)

Benoit, M.; Märk, J.; Weiss, P.; Benoit, D.; Clemens, J. C.; Fougeron, D.; Janvier, B.; Jevaud, M.; Karkar, S.; Menouni, M.; Pain, F.; Pinot, L.; Morel, C.; Laniece, P.

2011-12-01

A new beta+ radiosensitive microprobe implantable in rodent brain dedicated to in vivo and autonomous measurements of local time activity curves of beta radiotracers in a volume of brain tissue of a few mm3 has been developed recently. This project expands the concept of the previously designed beta microprobe, which has been validated extensively in neurobiological experiments performed on anesthetized animals. Due to its limitations considering recordings on awake and freely moving animals, we have proposed to develop a wireless setup that can be worn by an animal without constraining its movements. To that aim, we have chosen a highly beta sensitive Silicon-based detector to devise a compact pixellated probe. Miniaturized wireless electronics is used to read-out and transfer the measurement data. Initial Monte-Carlo simulations showed that high resistive Silicon pixels are appropriate for this purpose, with their dimensions to be adapted to our specific signals. More precisely, we demonstrated that 200 μm thick pixels with an area of 200 μm×500 μm are optimized in terms of beta+sensitivity versus relative transparency to the gamma background. Based on this theoretical study, we now present the development of the novel sensor, including the system simulations with technology computer-assisted design (TCAD) to investigate specific configurations of guard rings and their potential to increase the electrical isolation and stabilization of the pixel, as well as the corresponding physical tests to validate the particular geometries of this new sensor.

Tests of monolithic active pixel sensors at national synchrotron light source

NASA Astrophysics Data System (ADS)

Deptuch, G.; Besson, A.; Carini, G. A.; Siddons, D. P.; Szelezniak, M.; Winter, M.

2007-01-01

The paper discusses basic characterization of Monolithic Active Pixel Sensors (MAPS) carried out at the X12A beam-line at National Synchrotron Light Source (NSLS), Upton, NY, USA. The tested device was a MIMOSA V (MV) chip, back-thinned down to the epitaxial layer. This 1M pixels device features a pixel size of 17×17 μm2 and was designed in a 0.6 μm CMOS process. The X-ray beam energies used range from 5 to 12 keV. Examples of direct X-ray imaging capabilities are presented.

CMOS image sensors: State-of-the-art

NASA Astrophysics Data System (ADS)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

TRAC performance estimates

NASA Technical Reports Server (NTRS)

Everett, L.

1992-01-01

This report documents the performance characteristics of a Targeting Reflective Alignment Concept (TRAC) sensor. The performance will be documented for both short and long ranges. For long ranges, the sensor is used without the flat mirror attached to the target. To better understand the capabilities of the TRAC based sensors, an engineering model is required. The model can be used to better design the system for a particular application. This is necessary because there are many interrelated design variables in application. These include lense parameters, camera, and target configuration. The report presents first an analytical development of the performance, and second an experimental verification of the equations. In the analytical presentation it is assumed that the best vision resolution is a single pixel element. The experimental results suggest however that the resolution is better than 1 pixel. Hence the analytical results should be considered worst case conditions. The report also discusses advantages and limitations of the TRAC sensor in light of the performance estimates. Finally the report discusses potential improvements.

Automatic parquet block sorting using real-time spectral classification

NASA Astrophysics Data System (ADS)

Astrom, Anders; Astrand, Erik; Johansson, Magnus

1999-03-01

This paper presents a real-time spectral classification system based on the PGP spectrograph and a smart image sensor. The PGP is a spectrograph which extracts the spectral information from a scene and projects the information on an image sensor, which is a method often referred to as Imaging Spectroscopy. The classification is based on linear models and categorizes a number of pixels along a line. Previous systems adopting this method have used standard sensors, which often resulted in poor performance. The new system, however, is based on a patented near-sensor classification method, which exploits analogue features on the smart image sensor. The method reduces the enormous amount of data to be processed at an early stage, thus making true real-time spectral classification possible. The system has been evaluated on hardwood parquet boards showing very good results. The color defects considered in the experiments were blue stain, white sapwood, yellow decay and red decay. In addition to these four defect classes, a reference class was used to indicate correct surface color. The system calculates a statistical measure for each parquet block, giving the pixel defect percentage. The patented method makes it possible to run at very high speeds with a high spectral discrimination ability. Using a powerful illuminator, the system can run with a line frequency exceeding 2000 line/s. This opens up the possibility to maintain high production speed and still measure with good resolution.

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Fossum, E.; Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Zhou, Z.;

Low temperature performance of a commercially available InGaAs image sensor

NASA Astrophysics Data System (ADS)

Nakaya, Hidehiko; Komiyama, Yutaka; Kashikawa, Nobunari; Uchida, Tomohisa; Nagayama, Takahiro; Yoshida, Michitoshi

2016-08-01

We report the evaluation results of a commercially available InGaAs image sensor manufactured by Hamamatsu Photonics K. K., which has sensitivity between 0.95μm and 1.7μm at a room temperature. The sensor format was 128×128 pixels with 20 μm pitch. It was tested with our original readout electronics and cooled down to 80 K by a mechanical cooler to minimize the dark current. Although the readout noise and dark current were 200 e- and 20 e- /sec/pixel, respectively, we found no serious problems for the linearity, wavelength response, and intra-pixel response.

An assessment of commonly employed satellite-based remote sensors for mapping mangrove species in Mexico using an NDVI-based classification scheme.

PubMed

Valderrama-Landeros, L; Flores-de-Santiago, F; Kovacs, J M; Flores-Verdugo, F

2017-12-14

Optimizing the classification accuracy of a mangrove forest is of utmost importance for conservation practitioners. Mangrove forest mapping using satellite-based remote sensing techniques is by far the most common method of classification currently used given the logistical difficulties of field endeavors in these forested wetlands. However, there is now an abundance of options from which to choose in regards to satellite sensors, which has led to substantially different estimations of mangrove forest location and extent with particular concern for degraded systems. The objective of this study was to assess the accuracy of mangrove forest classification using different remotely sensed data sources (i.e., Landsat-8, SPOT-5, Sentinel-2, and WorldView-2) for a system located along the Pacific coast of Mexico. Specifically, we examined a stressed semiarid mangrove forest which offers a variety of conditions such as dead areas, degraded stands, healthy mangroves, and very dense mangrove island formations. The results indicated that Landsat-8 (30 m per pixel) had  the lowest overall accuracy at 64% and that WorldView-2 (1.6 m per pixel) had the highest at 93%. Moreover, the SPOT-5 and the Sentinel-2 classifications (10 m per pixel) were very similar having accuracies of 75 and 78%, respectively. In comparison to WorldView-2, the other sensors overestimated the extent of Laguncularia racemosa and underestimated the extent of Rhizophora mangle. When considering such type of sensors, the higher spatial resolution can be particularly important in mapping small mangrove islands that often occur in degraded mangrove systems.

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin`ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Atsushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

2014-11-01

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0-2.0 keV (FWHM) at 60 keV and 1.6-2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.

Spectral response characterization of CdTe sensors of different pixel size with the IBEX ASIC

NASA Astrophysics Data System (ADS)

Zambon, P.; Radicci, V.; Trueb, P.; Disch, C.; Rissi, M.; Sakhelashvili, T.; Schneebeli, M.; Broennimann, C.

2018-06-01

We characterized the spectral response of CdTe sensors with different pixel sizes - namely 75, 150 and 300 μm - bonded to the latest generation IBEX single photon counting ASIC developed at DECTRIS, to detect monochromatic X-ray energy in the range 10-60 keV. We present a comparison of pulse height spectra recorded for several energies, showing the dependence on the pixel size of the non-trivial atomic fluorescence and charge sharing effects that affect the detector response. The extracted energy resolution, in terms of full width at half maximum or FWHM, ranges from 1.5 to 4 keV according to the pixel size and chip configuration. We devoted a careful analysis to the Quantum Efficiency and to the Spectral Efficiency - a newly-introduced measure that quantifies the impact of fluorescence and escape phenomena on the spectrum integrity in high- Z material based detectors. We then investigated the influence of the photon flux on the aforementioned quantities up to 180 ṡ 106 cts/s/mm2 and 50 ṡ 106 cts/s/mm2 for the 150 μm and 300 μm pixel case, respectively. Finally, we complemented the experimental data with analytical and with Monte Carlo simulations - taking into account the stochastic nature of atomic fluorescence - with an excellent agreement.

A system for characterization of DEPFET silicon pixel matrices and test beam results

NASA Astrophysics Data System (ADS)

Furletov, Sergey; DEPFET Collaboration

2011-02-01

The DEPFET pixel detector offers first stage in-pixel amplification by incorporating a field effect transistor in the high resistivity silicon substrate. In this concept, a very small input capacitance can be realized thus allowing for low noise measurements. This makes DEPFET sensors a favorable technology for tracking in particle physics. Therefore a system with a DEPFET pixel matrix was developed to test DEPFET performance for an application as a vertex detector for the Belle II experiment. The system features a current based, row-wise readout of a DEPFET pixel matrix with a designated readout chip, steering chips for matrix control, a FPGA based data acquisition board, and a dedicated software package. The system was successfully operated in both test beam and lab environment. In 2009 new DEPFET matrices have been characterized in a 120 GeV pion beam at the CERN SPS. The current status of the DEPFET system and test beam results are presented.

Data Processing for a High Resolution Preclinical PET Detector Based on Philips DPC Digital SiPMs

NASA Astrophysics Data System (ADS)

Schug, David; Wehner, Jakob; Goldschmidt, Benjamin; Lerche, Christoph; Dueppenbecker, Peter Michael; Hallen, Patrick; Weissler, Bjoern; Gebhardt, Pierre; Kiessling, Fabian; Schulz, Volkmar

2015-06-01

In positron emission tomography (PET) systems, light sharing techniques are commonly used to readout scintillator arrays consisting of scintillation elements, which are smaller than the optical sensors. The scintillating element is then identified evaluating the signal heights in the readout channels using statistical algorithms, the center of gravity (COG) algorithm being the simplest and mostly used one. We propose a COG algorithm with a fixed number of input channels in order to guarantee a stable calculation of the position. The algorithm is implemented and tested with the raw detector data obtained with the Hyperion-II D preclinical PET insert which uses Philips Digital Photon Counting's (PDPC) digitial SiPMs. The gamma detectors use LYSO scintillator arrays with 30 ×30 crystals of 1 ×1 ×12 mm3 in size coupled to 4 ×4 PDPC DPC 3200-22 sensors (DPC) via a 2-mm-thick light guide. These self-triggering sensors are made up of 2 ×2 pixels resulting in a total of 64 readout channels. We restrict the COG calculation to a main pixel, which captures most of the scintillation light from a crystal, and its (direct and diagonal) neighboring pixels and reject single events in which this data is not fully available. This results in stable COG positions for a crystal element and enables high spatial image resolution. Due to the sensor layout, for some crystals it is very likely that a single diagonal neighbor pixel is missing as a result of the low light level on the corresponding DPC. This leads to a loss of sensitivity, if these events are rejected. An enhancement of the COG algorithm is proposed which handles the potentially missing pixel separately both for the crystal identification and the energy calculation. Using this advancement, we show that the sensitivity of the Hyperion-II D insert using the described scintillator configuration can be improved by 20-100% for practical useful readout thresholds of a single DPC pixel ranging from 17-52 photons. Furthermore, we show that the energy resolution of the scanner is superior for all readout thresholds if singles with a single missing pixel are accepted and correctly handled compared to the COG method only accepting singles with all neighbors present by 0-1.6% (relative difference). The presented methods can not only be applied to gamma detectors employing DPC sensors, but can be generalized to other similarly structured and self-triggering detectors, using light sharing techniques, as well.

Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

PubMed

Isikman, Serhan O; Greenbaum, Alon; Luo, Wei; Coskun, Ahmet F; Ozcan, Aydogan

2012-01-01

We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2). This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ± 50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3) across a sample volume of ~5 mm(3), which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode.

Sub-pixel Area Calculation Methods for Estimating Irrigated Areas.

PubMed

Thenkabailc, Prasad S; Biradar, Chandrashekar M; Noojipady, Praveen; Cai, Xueliang; Dheeravath, Venkateswarlu; Li, Yuanjie; Velpuri, Manohar; Gumma, Muralikrishna; Pandey, Suraj

2007-10-31

The goal of this paper was to develop and demonstrate practical methods forcomputing sub-pixel areas (SPAs) from coarse-resolution satellite sensor data. Themethods were tested and verified using: (a) global irrigated area map (GIAM) at 10-kmresolution based, primarily, on AVHRR data, and (b) irrigated area map for India at 500-mbased, primarily, on MODIS data. The sub-pixel irrigated areas (SPIAs) from coarse-resolution satellite sensor data were estimated by multiplying the full pixel irrigated areas(FPIAs) with irrigated area fractions (IAFs). Three methods were presented for IAFcomputation: (a) Google Earth Estimate (IAF-GEE); (b) High resolution imagery (IAF-HRI); and (c) Sub-pixel de-composition technique (IAF-SPDT). The IAF-GEE involvedthe use of "zoom-in-views" of sub-meter to 4-meter very high resolution imagery (VHRI)from Google Earth and helped determine total area available for irrigation (TAAI) or netirrigated areas that does not consider intensity or seasonality of irrigation. The IAF-HRI isa well known method that uses finer-resolution data to determine SPAs of the coarser-resolution imagery. The IAF-SPDT is a unique and innovative method wherein SPAs aredetermined based on the precise location of every pixel of a class in 2-dimensionalbrightness-greenness-wetness (BGW) feature-space plot of red band versus near-infraredband spectral reflectivity. The SPIAs computed using IAF-SPDT for the GIAM was within2 % of the SPIA computed using well known IAF-HRI. Further the fractions from the 2 methods were significantly correlated. The IAF-HRI and IAF-SPDT help to determine annualized or gross irrigated areas (AIA) that does consider intensity or seasonality (e.g., sum of areas from season 1, season 2, and continuous year-round crops). The national census based irrigated areas for the top 40 irrigated nations (which covers about 90% of global irrigation) was significantly better related (and had lesser uncertainties and errors) when compared to SPIAs than FPIAs derived using 10-km and 500-m data. The SPIAs were closer to actual areas whereas FPIAs grossly over-estimate areas. The research clearly demonstrated the value and the importance of sub-pixel areas as opposed to full pixel areas and presented 3 innovative methods for computing the same.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

Image acquisition system using on sensor compressed sampling technique

NASA Astrophysics Data System (ADS)

Gupta, Pravir Singh; Choi, Gwan Seong

2018-01-01

Advances in CMOS technology have made high-resolution image sensors possible. These image sensors pose significant challenges in terms of the amount of raw data generated, energy efficiency, and frame rate. This paper presents a design methodology for an imaging system and a simplified image sensor pixel design to be used in the system so that the compressed sensing (CS) technique can be implemented easily at the sensor level. This results in significant energy savings as it not only cuts the raw data rate but also reduces transistor count per pixel; decreases pixel size; increases fill factor; simplifies analog-to-digital converter, JPEG encoder, and JPEG decoder design; decreases wiring; and reduces the decoder size by half. Thus, CS has the potential to increase the resolution of image sensors for a given technology and die size while significantly decreasing the power consumption and design complexity. We show that it has potential to reduce power consumption by about 23% to 65%.

A novel weighted-direction color interpolation

NASA Astrophysics Data System (ADS)

Tao, Jin-you; Yang, Jianfeng; Xue, Bin; Liang, Xiaofen; Qi, Yong-hong; Wang, Feng

2013-08-01

A digital camera capture images by covering the sensor surface with a color filter array (CFA), only get a color sample at pixel location. Demosaicking is a process by estimating the missing color components of each pixel to get a full resolution image. In this paper, a new algorithm based on edge adaptive and different weighting factors is proposed. Our method can effectively suppress undesirable artifacts. Experimental results based on Kodak images show that the proposed algorithm obtain higher quality images compared to other methods in numerical and visual aspects.

Adaptive optics system for the IRSOL solar observatory

NASA Astrophysics Data System (ADS)

Ramelli, Renzo; Bucher, Roberto; Rossini, Leopoldo; Bianda, Michele; Balemi, Silvano

2010-07-01

We present a low cost adaptive optics system developed for the solar observatory at Istituto Ricerche Solari Locarno (IRSOL), Switzerland. The Shack-Hartmann Wavefront Sensor is based on a Dalsa CCD camera with 256 pixels × 256 pixels working at 1kHz. The wavefront compensation is obtained by a deformable mirror with 37 actuators and a Tip-Tilt mirror. A real time control software has been developed on a RTAI-Linux PC. Scicos/Scilab based software has been realized for an online analysis of the system behavior. The software is completely open source.

Penrose high-dynamic-range imaging

NASA Astrophysics Data System (ADS)

Li, Jia; Bai, Chenyan; Lin, Zhouchen; Yu, Jian

2016-05-01

High-dynamic-range (HDR) imaging is becoming increasingly popular and widespread. The most common multishot HDR approach, based on multiple low-dynamic-range images captured with different exposures, has difficulties in handling camera and object movements. The spatially varying exposures (SVE) technology provides a solution to overcome this limitation by obtaining multiple exposures of the scene in only one shot but suffers from a loss in spatial resolution of the captured image. While aperiodic assignment of exposures has been shown to be advantageous during reconstruction in alleviating resolution loss, almost all the existing imaging sensors use the square pixel layout, which is a periodic tiling of square pixels. We propose the Penrose pixel layout, using pixels in aperiodic rhombus Penrose tiling, for HDR imaging. With the SVE technology, Penrose pixel layout has both exposure and pixel aperiodicities. To investigate its performance, we have to reconstruct HDR images in square pixel layout from Penrose raw images with SVE. Since the two pixel layouts are different, the traditional HDR reconstruction methods are not applicable. We develop a reconstruction method for Penrose pixel layout using a Gaussian mixture model for regularization. Both quantitative and qualitative results show the superiority of Penrose pixel layout over square pixel layout.

Very-large-area CCD image sensors: concept and cost-effective research

NASA Astrophysics Data System (ADS)

Bogaart, E. W.; Peters, I. M.; Kleimann, A. C.; Manoury, E. J. P.; Klaassens, W.; de Laat, W. T. F. M.; Draijer, C.; Frost, R.; Bosiers, J. T.

2009-01-01

A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.

An improved algorithm for de-striping of ocean colour monitor imageries aided by measured sensor characteristics

NASA Astrophysics Data System (ADS)

Dutt, Ashutosh; Mishra, Ashish; Goswami, D. R.; Kumar, A. S. Kiran

2016-05-01

The push-broom sensors in bands meant to study oceans, in general suffer from residual non uniformity even after radiometric correction. The in-orbit data from OCM-2 shows pronounced striping in lower bands. There have been many attempts and different approaches to solve the problem using image data itself. The success or lack of it of each algorithm lies on the quality of the uniform region identified. In this paper, an image based destriping algorithm is presented with constraints being derived from Ground Calibration exercise. The basis of the methodology is determination of pixel to pixel non-uniformity through uniform segments identified and collected from large number of images, covering the dynamic range of the sensor. The results show the effectiveness of the algorithm over different targets. The performance is qualitatively evaluated by visual inspection and quantitatively measured by two parameters.

Developments towards the LHCb VELO upgrade

NASA Astrophysics Data System (ADS)

Cid Vidal, Xabier

2016-09-01

The Vertex Locator (VELO) is a silicon strip detector surrounding the interaction region of the LHCb experiment. The upgrade of the VELO is planned to be installed in 2019-2020, and the current detector will be replaced by a hybrid pixel system equipped with electronics capable of reading out at a rate of 40 MHz. The new detector is designed to withstand the radiation dose expected at an integrated luminosity of 50 fb-1. The detector will be composed of silicon pixel sensors, read out by the VeloPix ASIC that is being developed based on the TimePix/MediPix family. The prototype sensors for the VELO upgrade are being irradiated in five different facilities and the post-irradiation performance is being measured with testbeams, and in the lab. These proceedings present the VELO upgrade and briefly discuss the results of the sensor testing campaign.

Filling schemes at submicron scale: Development of submicron sized plasmonic colour filters

PubMed Central

Rajasekharan, Ranjith; Balaur, Eugeniu; Minovich, Alexander; Collins, Sean; James, Timothy D.; Djalalian-Assl, Amir; Ganesan, Kumaravelu; Tomljenovic-Hanic, Snjezana; Kandasamy, Sasikaran; Skafidas, Efstratios; Neshev, Dragomir N.; Mulvaney, Paul; Roberts, Ann; Prawer, Steven

2014-01-01

The pixel size imposes a fundamental limit on the amount of information that can be displayed or recorded on a sensor. Thus, there is strong motivation to reduce the pixel size down to the nanometre scale. Nanometre colour pixels cannot be fabricated by simply downscaling current pixels due to colour cross talk and diffraction caused by dyes or pigments used as colour filters. Colour filters based on plasmonic effects can overcome these difficulties. Although different plasmonic colour filters have been demonstrated at the micron scale, there have been no attempts so far to reduce the filter size to the submicron scale. Here, we present for the first time a submicron plasmonic colour filter design together with a new challenge - pixel boundary errors at the submicron scale. We present simple but powerful filling schemes to produce submicron colour filters, which are free from pixel boundary errors and colour cross- talk, are polarization independent and angle insensitive, and based on LCD compatible aluminium technology. These results lay the basis for the development of submicron pixels in displays, RGB-spatial light modulators, liquid crystal over silicon, Google glasses and pico-projectors. PMID:25242695

Filling schemes at submicron scale: development of submicron sized plasmonic colour filters.

PubMed

Rajasekharan, Ranjith; Balaur, Eugeniu; Minovich, Alexander; Collins, Sean; James, Timothy D; Djalalian-Assl, Amir; Ganesan, Kumaravelu; Tomljenovic-Hanic, Snjezana; Kandasamy, Sasikaran; Skafidas, Efstratios; Neshev, Dragomir N; Mulvaney, Paul; Roberts, Ann; Prawer, Steven

2014-09-22

The pixel size imposes a fundamental limit on the amount of information that can be displayed or recorded on a sensor. Thus, there is strong motivation to reduce the pixel size down to the nanometre scale. Nanometre colour pixels cannot be fabricated by simply downscaling current pixels due to colour cross talk and diffraction caused by dyes or pigments used as colour filters. Colour filters based on plasmonic effects can overcome these difficulties. Although different plasmonic colour filters have been demonstrated at the micron scale, there have been no attempts so far to reduce the filter size to the submicron scale. Here, we present for the first time a submicron plasmonic colour filter design together with a new challenge - pixel boundary errors at the submicron scale. We present simple but powerful filling schemes to produce submicron colour filters, which are free from pixel boundary errors and colour cross- talk, are polarization independent and angle insensitive, and based on LCD compatible aluminium technology. These results lay the basis for the development of submicron pixels in displays, RGB-spatial light modulators, liquid crystal over silicon, Google glasses and pico-projectors.

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

NASA Technical Reports Server (NTRS)

Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.;

Image Sensors Enhance Camera Technologies

NASA Technical Reports Server (NTRS)

2010-01-01

In the 1990s, a Jet Propulsion Laboratory team led by Eric Fossum researched ways of improving complementary metal-oxide semiconductor (CMOS) image sensors in order to miniaturize cameras on spacecraft while maintaining scientific image quality. Fossum s team founded a company to commercialize the resulting CMOS active pixel sensor. Now called the Aptina Imaging Corporation, based in San Jose, California, the company has shipped over 1 billion sensors for use in applications such as digital cameras, camera phones, Web cameras, and automotive cameras. Today, one of every three cell phone cameras on the planet feature Aptina s sensor technology.

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Lütticke, F.

2013-02-01

The existing Japanese Flavour Factory (KEKB) is currently being upgraded and is foreseen to be comissioned by 2014. The new e+e- collider (SuperKEKB) will have an instantaneous luminosity of 8 × 1035cm-2s-1, 40 times higher than the current world record set by KEKB. In order to handle the increased event rate and the higher background and provide high data quality, the Belle detector is upgraded to Belle II. The increased particle rate requires a new vertex pixel detector with high granularity. This silicon detector will be based on DEPFET technology and will consist of two layers of active pixel sensors. By integrating a field effect transistor into every pixel on top of a fully depleted bulk, the DEPFET technology combines detection and in-pixel amplification. This technology allows good signal to noise performance with a very low material budget.

CMOS Active Pixel Sensors for Low Power, Highly Miniaturized Imaging Systems

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1996-01-01

The complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology has been developed over the past three years by NASA at the Jet Propulsion Laboratory, and has reached a level of performance comparable to CCDs with greatly increased functionality but at a very reduced power level.

Methodology for the Determination of the Photon Detection Efficiency of Large-Area Multi-Pixel Photon Counters

NASA Astrophysics Data System (ADS)

Beattie, T.; Lolos, G. J.; Papandreou, Z.; Semenov, A. Yu.; Teigrob, L. A.

2015-08-01

Large-area, multi-pixel photon counters will be used for the electromagnetic Barrel Calorimeter of the GlueX experiment at Jefferson Lab. These photo sensors are based on a 3 ×3 mm2 cell populated by 50 μm pixels, with 16 such cells tiled in a 4 ×4 arrangement in the array. The 16 cells are summed electronically and the signals are amplified. The photon detection efficiency of a group of first-article units at room temperature under conditions similar to those of the experiment was extracted to be (28 ±2(stat) ±2(syst))%, by employing an analysis methodology based on Poisson statistics carried out on the summed energy signals from the units.

The progress of sub-pixel imaging methods

NASA Astrophysics Data System (ADS)

Wang, Hu; Wen, Desheng

2014-02-01

This paper reviews the Sub-pixel imaging technology principles, characteristics, the current development status at home and abroad and the latest research developments. As Sub-pixel imaging technology has achieved the advantages of high resolution of optical remote sensor, flexible working ways and being miniaturized with no moving parts. The imaging system is suitable for the application of space remote sensor. Its application prospect is very extensive. It is quite possible to be the research development direction of future space optical remote sensing technology.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

NASA Astrophysics Data System (ADS)

Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

2018-01-01

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

A 256×256 low-light-level CMOS imaging sensor with digital CDS

NASA Astrophysics Data System (ADS)

Zou, Mei; Chen, Nan; Zhong, Shengyou; Li, Zhengfen; Zhang, Jicun; Yao, Li-bin

2016-10-01

In order to achieve high sensitivity for low-light-level CMOS image sensors (CIS), a capacitive transimpedance amplifier (CTIA) pixel circuit with a small integration capacitor is used. As the pixel and the column area are highly constrained, it is difficult to achieve analog correlated double sampling (CDS) to remove the noise for low-light-level CIS. So a digital CDS is adopted, which realizes the subtraction algorithm between the reset signal and pixel signal off-chip. The pixel reset noise and part of the column fixed-pattern noise (FPN) can be greatly reduced. A 256×256 CIS with CTIA array and digital CDS is implemented in the 0.35μm CMOS technology. The chip size is 7.7mm×6.75mm, and the pixel size is 15μm×15μm with a fill factor of 20.6%. The measured pixel noise is 24LSB with digital CDS in RMS value at dark condition, which shows 7.8× reduction compared to the image sensor without digital CDS. Running at 7fps, this low-light-level CIS can capture recognizable images with the illumination down to 0.1lux.

Chemiresistive Graphene Sensors for Ammonia Detection.

PubMed

Mackin, Charles; Schroeder, Vera; Zurutuza, Amaia; Su, Cong; Kong, Jing; Swager, Timothy M; Palacios, Tomás

2018-05-09

The primary objective of this work is to demonstrate a novel sensor system as a convenient vehicle for scaled-up repeatability and the kinetic analysis of a pixelated testbed. This work presents a sensor system capable of measuring hundreds of functionalized graphene sensors in a rapid and convenient fashion. The sensor system makes use of a novel array architecture requiring only one sensor per pixel and no selector transistor. The sensor system is employed specifically for the evaluation of Co(tpfpp)ClO 4 functionalization of graphene sensors for the detection of ammonia as an extension of previous work. Co(tpfpp)ClO 4 treated graphene sensors were found to provide 4-fold increased ammonia sensitivity over pristine graphene sensors. Sensors were also found to exhibit excellent selectivity over interfering compounds such as water and common organic solvents. The ability to monitor a large sensor array with 160 pixels provides insights into performance variations and reproducibility-critical factors in the development of practical sensor systems. All sensors exhibit the same linearly related responses with variations in response exhibiting Gaussian distributions, a key finding for variation modeling and quality engineering purposes. The mean correlation coefficient between sensor responses was found to be 0.999 indicating highly consistent sensor responses and excellent reproducibility of Co(tpfpp)ClO 4 functionalization. A detailed kinetic model is developed to describe sensor response profiles. The model consists of two adsorption mechanisms-one reversible and one irreversible-and is shown capable of fitting experimental data with a mean percent error of 0.01%.

Novel Si-Ge-C Superlattices for More than Moore CMOS

DTIC Science & Technology

2016-03-31

diodes can be entirely formed by epitaxial growth, CMOS Active Pixel Sensors can be made with Fully-Depleted SOI CMOS . One important advantage of...a NMOS Transfer Gate (TG), which could be part of a 4T pixel APS. PPDs are preferred in CMOS image sensors for the ability of the pinning layer to...than Moore” with the creation of active photonic devices monolithically integrated with CMOS . Applications include Multispectral CMOS Image Sensors

The first bump-bonded pixel detectors on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

Unsupervised Framework to Monitor Lake Dynamics

NASA Technical Reports Server (NTRS)

Chen, Xi C. (Inventor); Boriah, Shyam (Inventor); Khandelwal, Ankush (Inventor); Kumar, Vipin (Inventor)

2016-01-01

A method of reducing processing time when assigning geographic areas to land cover labels using satellite sensor values includes a processor receiving a feature value for each pixel in a time series of frames of satellite sensor values, each frame containing multiple pixels and each frame covering a same geographic location. For each sub-area of the geographic location, the sub-area is assigned to one of at least three land cover labels. The processor determines a fraction function for a first sub-area assigned to a first land cover label. The sub-areas that were assigned to the first land cover label are reassigned to one of the second land cover label and the third land cover label based on the fraction functions of the sub-areas.

Towards Development of Microcalorimeter Arrays of Mo/Au Transition-Edge Sensors with Bismuth Absorbers

NASA Technical Reports Server (NTRS)

Tralshawala, Nilesh; Brekosky, Regis; Figueroa-Feliciano, Enectali; Li, Mary; Stahle, Carl; Stahle, Caroline

2000-01-01

We report on our progress towards the development of arrays of X-ray microcalorimeters as candidates for the high resolution x-ray spectrometer on the Constellation-X mission. The microcalorimeter arrays (30 x 30) with appropriate pixel sizes (0.25 mm. x 0.25 mm) and high packing fractions (greater than 96%) are being developed. Each individual pixel has a 10 micron thick Bi X-ray absorber that is shaped like a mushroom to increase the packing fraction, and a Mo/Au proximity effect superconducting transition edge sensor (TES). These are deposited on a 0.25 or 0.5 micron thick silicon nitride membrane with slits to provide a controllable weak thermal link to the sink temperature. Studies are underway to model, test and optimize the TES pixel uniformity, critical current, heat capacity and the membrane thermal conductance in the array structure. Fabrication issues and procedures, and results of our efforts based on these optimizations will be provided.

Design and fabrication of vertically-integrated CMOS image sensors.

PubMed

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

PubMed Central

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

PubMed Central

Boukhayma, Assim; Peizerat, Arnaud; Enz, Christian

2016-01-01

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level optimizations, device choices and circuit techniques at the pixel and column level of the readout chain are derived and discussed. The noise reduction techniques that can be implemented at the column and pixel level are verified by transient noise simulations, measurement and results from recently-published low noise CIS. We show how recently-reported process refinement, leading to the reduction of the sense node capacitance, can be combined with an optimal in-pixel source follower design to reach a sub-0.3erms- read noise at room temperature. This paper also discusses the impact of technology scaling on the CIS read noise. It shows how designers can take advantage of scaling and how the Metal-Oxide-Semiconductor (MOS) transistor gate leakage tunneling current appears as a challenging limitation. For this purpose, both simulation results of the gate leakage current and 1/f noise data reported from different foundries and technology nodes are used.

NDVI, scale invariance and the modifiable areal unit problem: An assessment of vegetation in the Adelaide Parklands

USGS Publications Warehouse

Nouri, Hamideh; Anderson, Sharolyn; Sutton, Paul; Beecham, Simon; Nagler, Pamela L.; Jarchow, Christopher J.; Roberts, Dar A.

2017-01-01

This research addresses the question as to whether or not the Normalised Difference Vegetation Index (NDVI) is scale invariant (i.e. constant over spatial aggregation) for pure pixels of urban vegetation. It has been long recognized that there are issues related to the modifiable areal unit problem (MAUP) pertaining to indices such as NDVI and images at varying spatial resolutions. These issues are relevant to using NDVI values in spatial analyses. We compare two different methods of calculation of a mean NDVI: 1) using pixel values of NDVI within feature/object boundaries and 2) first calculating the mean red and mean near-infrared across all feature pixels and then calculating NDVI. We explore the nature and magnitude of these differences for images taken from two sensors, a 1.24 m resolution WorldView-3 and a 0.1 m resolution digital aerial image. We apply these methods over an urban park located in the Adelaide Parklands of South Australia. We demonstrate that the MAUP is not an issue for calculation of NDVI within a sensor for pure urban vegetation pixels. This may prove useful for future rule-based monitoring of the ecosystem functioning of green infrastructure.

The Physics of Imaging with Remote Sensors : Photon State Space & Radiative Transfer

NASA Technical Reports Server (NTRS)

Davis, Anthony B.

2012-01-01

Standard (mono-pixel/steady-source) retrieval methodology is reaching its fundamental limit with access to multi-angle/multi-spectral photo- polarimetry. Next... Two emerging new classes of retrieval algorithm worth nurturing: multi-pixel time-domain Wave-radiometry transition regimes, and more... Cross-fertilization with bio-medical imaging. Physics-based remote sensing: - What is "photon state space?" - What is "radiative transfer?" - Is "the end" in sight? Two wide-open frontiers! center dot Examples (with variations.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

DTIC Science & Technology

2016-01-20

Figure 7 4×4 GMAPD array wire bonded to CMOS timing circuits Figure 8 Low‐fill‐factor APD design used in lidar sensors The APD doping...epitaxial growth and the pixels are isolated by mesa etch. 128×32 lidar image sensors were built by bump bonding the APD arrays to a CMOS timing...passive image sensor with this large a format based on hybridization of a GMAPD array to a CMOS readout. Fig. 14 shows one of the first images taken

JPL CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

PubMed

Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

2015-04-01

Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

Report on recent results of the PERCIVAL soft X-ray imager

NASA Astrophysics Data System (ADS)

Khromova, A.; Cautero, G.; Giuressi, D.; Menk, R.; Pinaroli, G.; Stebel, L.; Correa, J.; Marras, A.; Wunderer, C. B.; Lange, S.; Tennert, M.; Niemann, M.; Hirsemann, H.; Smoljanin, S.; Reza, S.; Graafsma, H.; Göttlicher, P.; Shevyakov, I.; Supra, J.; Xia, Q.; Zimmer, M.; Guerrini, N.; Marsh, B.; Sedgwick, I.; Nicholls, T.; Turchetta, R.; Pedersen, U.; Tartoni, N.; Hyun, H. J.; Kim, K. S.; Rah, S. Y.; Hoenk, M. E.; Jewell, A. D.; Jones, T. J.; Nikzad, S.

2016-11-01

The PERCIVAL (Pixelated Energy Resolving CMOS Imager, Versatile And Large) soft X-ray 2D imaging detector is based on stitched, wafer-scale sensors possessing a thick epi-layer, which together with back-thinning and back-side illumination yields elevated quantum efficiency in the photon energy range of 125-1000 eV. Main application fields of PERCIVAL are foreseen in photon science with FELs and synchrotron radiation. This requires high dynamic range up to 105 ph @ 250 eV paired with single photon sensitivity with high confidence at moderate frame rates in the range of 10-120 Hz. These figures imply the availability of dynamic gain switching on a pixel-by-pixel basis and a highly parallel, low noise analog and digital readout, which has been realized in the PERCIVAL sensor layout. Different aspects of the detector performance have been assessed using prototype sensors with different pixel and ADC types. This work will report on the recent test results performed on the newest chip prototypes with the improved pixel and ADC architecture. For the target frame rates in the 10-120 Hz range an average noise floor of 14e- has been determined, indicating the ability of detecting single photons with energies above 250 eV. Owing to the successfully implemented adaptive 3-stage multiple-gain switching, the integrated charge level exceeds 4 · 106 e- or 57000 X-ray photons at 250 eV per frame at 120 Hz. For all gains the noise level remains below the Poisson limit also in high-flux conditions. Additionally, a short overview over the updates on an oncoming 2 Mpixel (P2M) detector system (expected at the end of 2016) will be reported.

SpectraCAM SPM: a camera system with high dynamic range for scientific and medical applications

NASA Astrophysics Data System (ADS)

Bhaskaran, S.; Baiko, D.; Lungu, G.; Pilon, M.; VanGorden, S.

2005-08-01

A scientific camera system having high dynamic range designed and manufactured by Thermo Electron for scientific and medical applications is presented. The newly developed CID820 image sensor with preamplifier-per-pixel technology is employed in this camera system. The 4 Mega-pixel imaging sensor has a raw dynamic range of 82dB. Each high-transparent pixel is based on a preamplifier-per-pixel architecture and contains two photogates for non-destructive readout of the photon-generated charge (NDRO). Readout is achieved via parallel row processing with on-chip correlated double sampling (CDS). The imager is capable of true random pixel access with a maximum operating speed of 4MHz. The camera controller consists of a custom camera signal processor (CSP) with an integrated 16-bit A/D converter and a PowerPC-based CPU running a Linux embedded operating system. The imager is cooled to -40C via three-stage cooler to minimize dark current. The camera housing is sealed and is designed to maintain the CID820 imager in the evacuated chamber for at least 5 years. Thermo Electron has also developed custom software and firmware to drive the SpectraCAM SPM camera. Included in this firmware package is the new Extreme DRTM algorithm that is designed to extend the effective dynamic range of the camera by several orders of magnitude up to 32-bit dynamic range. The RACID Exposure graphical user interface image analysis software runs on a standard PC that is connected to the camera via Gigabit Ethernet.

Computational wavelength resolution for in-line lensless holography: phase-coded diffraction patterns and wavefront group-sparsity

NASA Astrophysics Data System (ADS)

Katkovnik, Vladimir; Shevkunov, Igor; Petrov, Nikolay V.; Egiazarian, Karen

2017-06-01

In-line lensless holography is considered with a random phase modulation at the object plane. The forward wavefront propagation is modelled using the Fourier transform with the angular spectrum transfer function. The multiple intensities (holograms) recorded by the sensor are random due to the random phase modulation and noisy with Poissonian noise distribution. It is shown by computational experiments that high-accuracy reconstructions can be achieved with resolution going up to the two thirds of the wavelength. With respect to the sensor pixel size it is a super-resolution with a factor of 32. The algorithm designed for optimal superresolution phase/amplitude reconstruction from Poissonian data is based on the general methodology developed for phase retrieval with a pixel-wise resolution in V. Katkovnik, "Phase retrieval from noisy data based on sparse approximation of object phase and amplitude", http://www.cs.tut.fi/ lasip/DDT/index3.html.

In-situ device integration of large-area patterned organic nanowire arrays for high-performance optical sensors

PubMed Central

Wu, Yiming; Zhang, Xiujuan; Pan, Huanhuan; Deng, Wei; Zhang, Xiaohong; Zhang, Xiwei; Jie, Jiansheng

2013-01-01

Single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices due to their extraordinary properties. However, it remains a critical challenge to achieve large-scale organic NW array assembly and device integration. Herein, we demonstrate a feasible one-step method for large-area patterned growth of cross-aligned single-crystalline organic NW arrays and their in-situ device integration for optical image sensors. The integrated image sensor circuitry contained a 10 × 10 pixel array in an area of 1.3 × 1.3 mm2, showing high spatial resolution, excellent stability and reproducibility. More importantly, 100% of the pixels successfully operated at a high response speed and relatively small pixel-to-pixel variation. The high yield and high spatial resolution of the operational pixels, along with the high integration level of the device, clearly demonstrate the great potential of the one-step organic NW array growth and device construction approach for large-scale optoelectronic device integration. PMID:24287887

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long.more » A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.« less

Fully 3D-Integrated Pixel Detectors for X-Rays

DOE PAGES

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; ...

2016-01-01

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

10000 pixels wide CMOS frame imager for earth observation from a HALE UAV

NASA Astrophysics Data System (ADS)

Delauré, B.; Livens, S.; Everaerts, J.; Kleihorst, R.; Schippers, Gert; de Wit, Yannick; Compiet, John; Banachowicz, Bartosz

2009-09-01

MEDUSA is the lightweight high resolution camera, designed to be operated from a solar-powered Unmanned Aerial Vehicle (UAV) flying at stratospheric altitudes. The instrument is a technology demonstrator within the Pegasus program and targets applications such as crisis management and cartography. A special wide swath CMOS imager has been developed by Cypress Semiconductor Cooperation Belgium to meet the specific sensor requirements of MEDUSA. The CMOS sensor has a stitched design comprising a panchromatic and color sensor on the same die. Each sensor consists of 10000*1200 square pixels (5.5μm size, novel 6T architecture) with micro-lenses. The exposure is performed by means of a high efficiency snapshot shutter. The sensor is able to operate at a rate of 30fps in full frame readout. Due to a novel pixel design, the sensor has low dark leakage of the memory elements (PSNL) and low parasitic light sensitivity (PLS). Still it maintains a relative high QE (Quantum efficiency) and a FF (fill factor) of over 65%. It features an MTF (Modulation Transfer Function) higher than 60% at Nyquist frequency in both X and Y directions The measured optical/electrical crosstalk (expressed as MTF) of this 5.5um pixel is state-of-the art. These properties makes it possible to acquire sharp images also in low-light conditions.

Synchrotron based planar imaging and digital tomosynthesis of breast and biopsy phantoms using a CMOS active pixel sensor.

PubMed

Szafraniec, Magdalena B; Konstantinidis, Anastasios C; Tromba, Giuliana; Dreossi, Diego; Vecchio, Sara; Rigon, Luigi; Sodini, Nicola; Naday, Steve; Gunn, Spencer; McArthur, Alan; Olivo, Alessandro

2015-03-01

The SYRMEP (SYnchrotron Radiation for MEdical Physics) beamline at Elettra is performing the first mammography study on human patients using free-space propagation phase contrast imaging. The stricter spatial resolution requirements of this method currently force the use of conventional films or specialized computed radiography (CR) systems. This also prevents the implementation of three-dimensional (3D) approaches. This paper explores the use of an X-ray detector based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology as a possible alternative, for acquisitions both in planar and tomosynthesis geometry. Results indicate higher quality of the images acquired with the synchrotron set-up in both geometries. This improvement can be partly ascribed to the use of parallel, collimated and monochromatic synchrotron radiation (resulting in scatter rejection, no penumbra-induced blurring and optimized X-ray energy), and partly to phase contrast effects. Even though the pixel size of the used detector is still too large - and thus suboptimal - for free-space propagation phase contrast imaging, a degree of phase-induced edge enhancement can clearly be observed in the images. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Dependence of Adaptive Cross-correlation Algorithm Performance on the Extended Scene Image Quality

NASA Technical Reports Server (NTRS)

Sidick, Erkin

2008-01-01

Recently, we reported an adaptive cross-correlation (ACC) algorithm to estimate with high accuracy the shift as large as several pixels between two extended-scene sub-images captured by a Shack-Hartmann wavefront sensor. It determines the positions of all extended-scene image cells relative to a reference cell in the same frame using an FFT-based iterative image-shifting algorithm. It works with both point-source spot images as well as extended scene images. We have demonstrated previously based on some measured images that the ACC algorithm can determine image shifts with as high an accuracy as 0.01 pixel for shifts as large 3 pixels, and yield similar results for both point source spot images and extended scene images. The shift estimate accuracy of the ACC algorithm depends on illumination level, background, and scene content in addition to the amount of the shift between two image cells. In this paper we investigate how the performance of the ACC algorithm depends on the quality and the frequency content of extended scene images captured by a Shack-Hatmann camera. We also compare the performance of the ACC algorithm with those of several other approaches, and introduce a failsafe criterion for the ACC algorithm-based extended scene Shack-Hatmann sensors.

Image analysis by integration of disparate information

NASA Technical Reports Server (NTRS)

Lemoigne, Jacqueline

1993-01-01

Image analysis often starts with some preliminary segmentation which provides a representation of the scene needed for further interpretation. Segmentation can be performed in several ways, which are categorized as pixel based, edge-based, and region-based. Each of these approaches are affected differently by various factors, and the final result may be improved by integrating several or all of these methods, thus taking advantage of their complementary nature. In this paper, we propose an approach that integrates pixel-based and edge-based results by utilizing an iterative relaxation technique. This approach has been implemented on a massively parallel computer and tested on some remotely sensed imagery from the Landsat-Thematic Mapper (TM) sensor.

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Study of a GaAs:Cr-based Timepix detector using synchrotron facility

NASA Astrophysics Data System (ADS)

Smolyanskiy, P.; Kozhevnikov, D.; Bakina, O.; Chelkov, G.; Dedovich, D.; Kuper, K.; Leyva Fabelo, A.; Zhemchugov, A.

2017-11-01

High resistivity gallium arsenide compensated by chromium fabricated by Tomsk State University has demonstrated a good suitability as a sensor material for hybrid pixel detectors used in X-ray imaging systems with photon energies up to 60 keV. The material is available with a thickness up to 1 mm and due to its Z number a high absorption efficiency in this energy region is provided. However, the performance of thick GaAs:Cr-based detectors in spectroscopic applications is limited by readout electronics with relatively small pixels due to the charge sharing effect. In this paper, we present the experimental investigation of the charge sharing effect contribution in the GaAs:Cr-based Timepix detector. By means of scanning the detector with a pencil photon beam generated by the synchrotron facility, the geometrical mapping of pixel sensitivity is obtained, as well as the energy resolution of a single pixel. The experimental results are supported by numerical simulations. The observed limitation of the GaAs:Cr-based Timepix detector for the high flux X-ray imaging is discussed.

Characterisation of GaAs:Cr pixel sensors coupled to Timepix chips in view of synchrotron applications

NASA Astrophysics Data System (ADS)

Ponchut, C.; Cotte, M.; Lozinskaya, A.; Zarubin, A.; Tolbanov, O.; Tyazhev, A.

2017-12-01

In order to meet the needs of some ESRF beamlines for highly efficient 2D X-ray detectors in the 20-50 keV range, GaAs:Cr pixel sensors coupled to TIMEPIX readout chips were implemented into a MAXIPIX detector. Use of GaAs:Cr sensor material is intended to overcome the limitations of Si (low absorption) and of CdTe (fluorescence) in this energy range The GaAs:Cr sensor assemblies were characterised with both laboratory X-ray sources and monochromatic synchrotron X-ray beams. The sensor response as a function of bias voltage was compared to a theoretical model, leading to an estimation of the μτ product of electrons in GaAs:Cr sensor material of 1.6×10-4 cm2/V. The spatial homogeneity of X-ray images obtained with the sensors was measured in different irradiation conditions, showing a particular sensitivity to small variations in the incident beam spectrum. 2D-resolved elemental mapping of the sensor surface was carried out to investigate a possible relation between the noise pattern observed in X-ray images and local fluctuations in chemical composition. A scanning of the sensor response at subpixel scale revealed that these irregularities can be correlated with a distortion of the effective pixel shapes.

Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Kremastiotis, I.

2017-12-01

The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128×128 square pixels with 25μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (~20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ~20 ns for a power consumption of 5μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (~20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using future assemblies with the readout chip.

The INFN-FBK pixel R&D program for HL-LHC

NASA Astrophysics Data System (ADS)

Meschini, M.; Dalla Betta, G. F.; Boscardin, M.; Calderini, G.; Darbo, G.; Giacomini, G.; Messineo, A.; Ronchin, S.

2016-09-01

We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel †

PubMed Central

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-01-01

A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e−/s at 60 °C, an ultra-low read noise of 0.90 e−·rms, a high full well capacity (FWC) of 4100 e−, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed. PMID:29206162

Nonlinear bias compensation of ZiYuan-3 satellite imagery with cubic splines

NASA Astrophysics Data System (ADS)

Cao, Jinshan; Fu, Jianhong; Yuan, Xiuxiao; Gong, Jianya

2017-11-01

Like many high-resolution satellites such as the ALOS, MOMS-2P, QuickBird, and ZiYuan1-02C satellites, the ZiYuan-3 satellite suffers from different levels of attitude oscillations. As a result of such oscillations, the rational polynomial coefficients (RPCs) obtained using a terrain-independent scenario often have nonlinear biases. In the sensor orientation of ZiYuan-3 imagery based on a rational function model (RFM), these nonlinear biases cannot be effectively compensated by an affine transformation. The sensor orientation accuracy is thereby worse than expected. In order to eliminate the influence of attitude oscillations on the RFM-based sensor orientation, a feasible nonlinear bias compensation approach for ZiYuan-3 imagery with cubic splines is proposed. In this approach, no actual ground control points (GCPs) are required to determine the cubic splines. First, the RPCs are calculated using a three-dimensional virtual control grid generated based on a physical sensor model. Second, one cubic spline is used to model the residual errors of the virtual control points in the row direction and another cubic spline is used to model the residual errors in the column direction. Then, the estimated cubic splines are used to compensate the nonlinear biases in the RPCs. Finally, the affine transformation parameters are used to compensate the residual biases in the RPCs. Three ZiYuan-3 images were tested. The experimental results showed that before the nonlinear bias compensation, the residual errors of the independent check points were nonlinearly biased. Even if the number of GCPs used to determine the affine transformation parameters was increased from 4 to 16, these nonlinear biases could not be effectively compensated. After the nonlinear bias compensation with the estimated cubic splines, the influence of the attitude oscillations could be eliminated. The RFM-based sensor orientation accuracies of the three ZiYuan-3 images reached 0.981 pixels, 0.890 pixels, and 1.093 pixels, which were respectively 42.1%, 48.3%, and 54.8% better than those achieved before the nonlinear bias compensation.

Smart image sensors: an emerging key technology for advanced optical measurement and microsystems

NASA Astrophysics Data System (ADS)

Seitz, Peter

1996-08-01

Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one 'smart image sensor' or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each 'smart pixel' with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality: Single-chip cameras with on- chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, single-chip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additional compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

Comparison of Huanjing and Landsat satellite remote sensing of the spatial heterogeneity of Qinghai-Tibet alpine grassland

NASA Astrophysics Data System (ADS)

Wang, Junbang; Sun, Wenyi

2014-11-01

Remote sensing is widely applied in the study of terrestrial primary production and the global carbon cycle. The researches on the spatial heterogeneity in images with different sensors and resolutions would improve the application of remote sensing. In this study two sites on alpine meadow grassland in Qinghai, China, which have distinct fractal vegetation cover, were used to test and analyze differences between Normalized Difference Vegetation Index (NDVI) and enhanced vegetation index (EVI) derived from the Huanjing (HJ) and Landsat Thematic Mapper (TM) sensors. The results showed that: 1) NDVI estimated from HJ were smaller than the corresponding values from TM at the two sites whereas EVI were almost the same for the two sensors. 2) The overall variance represented by HJ data was consistently about half of that of Landsat TM although their nominal pixel size is approximately 30m for both sensors. The overall variance from EVI is greater than that from NDVI. The difference of the range between the two sensors is about 6 pixels at 30m resolution. The difference of the range in which there is not more corrective between two vegetation indices is about 1 pixel. 3) The sill decreased when pixel size increased from 30m to 1km, and then decreased very quickly when pixel size is changed to 250m from 30m or 90m but slowly when changed from 250m to 500m. HJ can capture this spatial heterogeneity to some extent and this study provides foundations for the use of the sensor for validation of net primary productivity estimates obtained from ecosystem process models.

Faxed document image restoration method based on local pixel patterns

NASA Astrophysics Data System (ADS)

Akiyama, Teruo; Miyamoto, Nobuo; Oguro, Masami; Ogura, Kenji

1998-04-01

A method for restoring degraded faxed document images using the patterns of pixels that construct small areas in a document is proposed. The method effectively restores faxed images that contain the halftone textures and/or density salt-and-pepper noise that degrade OCR system performance. The halftone image restoration process, white-centered 3 X 3 pixels, in which black-and-white pixels alternate, are identified first using the distribution of the pixel values as halftone textures, and then the white center pixels are inverted to black. To remove high-density salt- and-pepper noise, it is assumed that the degradation is caused by ill-balanced bias and inappropriate thresholding of the sensor output which results in the addition of random noise. Restored image can be estimated using an approximation that uses the inverse operation of the assumed original process. In order to process degraded faxed images, the algorithms mentioned above are combined. An experiment is conducted using 24 especially poor quality examples selected from data sets that exemplify what practical fax- based OCR systems cannot handle. The maximum recovery rate in terms of mean square error was 98.8 percent.

PIXELS: Using field-based learning to investigate students' concepts of pixels and sense of scale

NASA Astrophysics Data System (ADS)

Pope, A.; Tinigin, L.; Petcovic, H. L.; Ormand, C. J.; LaDue, N.

2015-12-01

Empirical work over the past decade supports the notion that a high level of spatial thinking skill is critical to success in the geosciences. Spatial thinking incorporates a host of sub-skills such as mentally rotating an object, imagining the inside of a 3D object based on outside patterns, unfolding a landscape, and disembedding critical patterns from background noise. In this study, we focus on sense of scale, which refers to how an individual quantified space, and is thought to develop through kinesthetic experiences. Remote sensing data are increasingly being used for wide-reaching and high impact research. A sense of scale is critical to many areas of the geosciences, including understanding and interpreting remotely sensed imagery. In this exploratory study, students (N=17) attending the Juneau Icefield Research Program participated in a 3-hour exercise designed to study how a field-based activity might impact their sense of scale and their conceptions of pixels in remotely sensed imagery. Prior to the activity, students had an introductory remote sensing lecture and completed the Sense of Scale inventory. Students walked and/or skied the perimeter of several pixel types, including a 1 m square (representing a WorldView sensor's pixel), a 30 m square (a Landsat pixel) and a 500 m square (a MODIS pixel). The group took reflectance measurements using a field radiometer as they physically traced out the pixel. The exercise was repeated in two different areas, one with homogenous reflectance, and another with heterogeneous reflectance. After the exercise, students again completed the Sense of Scale instrument and a demographic survey. This presentation will share the effects and efficacy of the field-based intervention to teach remote sensing concepts and to investigate potential relationships between students' concepts of pixels and sense of scale.

Infrared sensors for Earth observation missions

NASA Astrophysics Data System (ADS)

Ashcroft, P.; Thorne, P.; Weller, H.; Baker, I.

2007-10-01

SELEX S&AS is developing a family of infrared sensors for earth observation missions. The spectral bands cover shortwave infrared (SWIR) channels from around 1μm to long-wave infrared (LWIR) channels up to 15μm. Our mercury cadmium telluride (MCT) technology has enabled a sensor array design that can satisfy the requirements of all of the SWIR and medium-wave infrared (MWIR) bands with near-identical arrays. This is made possible by the combination of a set of existing technologies that together enable a high degree of flexibility in the pixel geometry, sensitivity, and photocurrent integration capacity. The solution employs a photodiode array under the control of a readout integrated circuit (ROIC). The ROIC allows flexible geometries and in-pixel redundancy to maximise operability and reliability, by combining the photocurrent from a number of photodiodes into a single pixel. Defective or inoperable diodes (or "sub-pixels") can be deselected with tolerable impact on the overall pixel performance. The arrays will be fabricated using the "loophole" process in MCT grown by liquid-phase epitaxy (LPE). These arrays are inherently robust, offer high quantum efficiencies and have been used in previous space programs. The use of loophole arrays also offers access to SELEX's avalanche photodiode (APD) technology, allowing low-noise, highly uniform gain at the pixel level where photon flux is very low.

Extraction of incident irradiance from LWIR hyperspectral imagery

NASA Astrophysics Data System (ADS)

Lahaie, Pierre

2014-10-01

The atmospheric correction of thermal hyperspectral imagery can be separated in two distinct processes: Atmospheric Compensation (AC) and Temperature and Emissivity separation (TES). TES requires for input at each pixel, the ground leaving radiance and the atmospheric downwelling irradiance, which are the outputs of the AC process. The extraction from imagery of the downwelling irradiance requires assumptions about some of the pixels' nature, the sensor and the atmosphere. Another difficulty is that, often the sensor's spectral response is not well characterized. To deal with this unknown, we defined a spectral mean operator that is used to filter the ground leaving radiance and a computation of the downwelling irradiance from MODTRAN. A user will select a number of pixels in the image for which the emissivity is assumed to be known. The emissivity of these pixels is assumed to be smooth and that the only spectrally fast varying variable in the downwelling irradiance. Using these assumptions we built an algorithm to estimate the downwelling irradiance. The algorithm is used on all the selected pixels. The estimated irradiance is the average on the spectral channels of the resulting computation. The algorithm performs well in simulation and results are shown for errors in the assumed emissivity and for errors in the atmospheric profiles. The sensor noise influences mainly the required number of pixels.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

PubMed Central

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-01-01

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities. PMID:28879978

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Staller, C.; Zhou, Z;

Can direct electron detectors outperform phosphor-CCD systems for TEM?

NASA Astrophysics Data System (ADS)

Moldovan, G.; Li, X.; Kirkland, A.

2008-08-01

A new generation of imaging detectors is being considered for application in TEM, but which device architectures can provide the best images? Monte Carlo simulations of the electron-sensor interaction are used here to calculate the expected modulation transfer of monolithic active pixel sensors (MAPS), hybrid active pixel sensors (HAPS) and double sided Silicon strip detectors (DSSD), showing that ideal and nearly ideal transfer can be obtained using DSSD and MAPS sensors. These results highly recommend the replacement of current phosphor screen and charge coupled device imaging systems with such new directly exposed position sensitive electron detectors.

Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.;

Dosimetric characterization with 62 MeV protons of a silicon-segmented detector for 2D dose verifications in radiotherapy

NASA Astrophysics Data System (ADS)

Talamonti, C.; Bucciolini, M.; Marrazzo, L.; Menichelli, D.; Bruzzi, M.; Cirrone, G. A. P.; Cuttone, G.; LoJacono, P.

2008-10-01

Due to the features of the modern radiotherapy techniques, namely intensity modulated radiation therapy and proton therapy, where high spatial dose gradients are often present, detectors to be employed for 2D dose verifications have to satisfy very narrow requirements. In particular they have to show high spatial resolution. In the framework of the European Integrated Project—Methods and Advanced Equipment for Simulation and Treatment in Radio-Oncology (MAESTRO, no. LSHC-CT-2004-503564), a dosimetric detector adequate for 2D pre-treatment dose verifications was developed. It is a modular detector, based on a monolithic silicon-segmented sensor, with an n-type implantation on an epitaxial p-type layer. Each pixel element is 2×2 mm 2 and the distance center-to-center is 3 mm. The sensor is composed of 21×21 pixels. In this paper, we report the dosimetric characterization of the system with a proton beam. The sensor was irradiated with 62 MeV protons for clinical treatments at INFN-Laboratori Nazionali del Sud (LNS) Catania. The studied parameters were repeatability of a same pixel, response linearity versus absorbed dose, and dose rate and dependence on field size. The obtained results are promising since the performances are within the project specifications.

Advanced Space-Based Detector Research at the Air Force Research Laboratory

DTIC Science & Technology

2009-03-04

purposes. The dark backgrounds place very stringent requirements on the noise characteristics of the sensor system, resulting in FPAs that must be...signal within a single pixel of a detector. 2. Optical signal amplification 2.1. Quantum interference Quantum well infrared photodetectors ( QWIPs ) are...are now extremely attractive for a growing number of sensor applications. Although considerable progress has been made in QWIPs , their relatively low

Coincidence detection of spatially correlated photon pairs with a monolithic time-resolving detector array.

PubMed

Unternährer, Manuel; Bessire, Bänz; Gasparini, Leonardo; Stoppa, David; Stefanov, André

2016-12-12

We demonstrate coincidence measurements of spatially entangled photons by means of a multi-pixel based detection array. The sensor, originally developed for positron emission tomography applications, is a fully digital 8×16 silicon photomultiplier array allowing not only photon counting but also per-pixel time stamping of the arrived photons with an effective resolution of 265 ps. Together with a frame rate of 500 kfps, this property exceeds the capabilities of conventional charge-coupled device cameras which have become of growing interest for the detection of transversely correlated photon pairs. The sensor is used to measure a second-order correlation function for various non-collinear configurations of entangled photons generated by spontaneous parametric down-conversion. The experimental results are compared to theory.

Note: Operation of gamma-ray microcalorimeters at elevated count rates using filters with constraints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alpert, B. K.; Horansky, R. D.; Bennett, D. A.

Microcalorimeter sensors operated near 0.1 K can measure the energy of individual x- and gamma-ray photons with significantly more precision than conventional semiconductor technologies. Both microcalorimeter arrays and higher per pixel count rates are desirable to increase the total throughput of spectrometers based on these devices. The millisecond recovery time of gamma-ray microcalorimeters and the resulting pulse pileup are significant obstacles to high per pixel count rates. Here, we demonstrate operation of a microcalorimeter detector at elevated count rates by use of convolution filters designed to be orthogonal to the exponential tail of a preceding pulse. These filters allow operationmore » at 50% higher count rates than conventional filters while largely preserving sensor energy resolution.« less

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Beyer, J.-C.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Savic, N.; Taibah, R.

2018-01-01

In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4×1016 1 MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe challenge. Thanks to their low material budget and high charge collection efficiency after irradiation, modules made of thin planar pixel sensors are promising candidates to instrument these layers. To optimise the sensor layout for the decreased pixel cell size of 50×50 μm2, TCAD device simulations are being performed to investigate the charge collection efficiency before and after irradiation. In addition, sensors of 100-150 μm thickness, interconnected to FE-I4 read-out chips featuring the previous generation pixel cell size of 50×250 μm2, are characterised with testbeams at the CERN-SPS and DESY facilities. The performance of sensors with various designs, irradiated up to a fluence of 1×1016 neq./cm2, is compared in terms of charge collection and hit efficiency. A replacement of the two innermost pixel layers is foreseen during the lifetime of HL-LHC . The replacement will require several months of intervention, during which the remaining detector modules cannot be cooled. They are kept at room temperature, thus inducing an annealing. The performance of irradiated modules will be investigated with testbeam campaigns and the method of accelerated annealing at higher temperatures.

Fabrication of a Kilopixel Array of Superconducting Microcalorimeters with Microstripline Wiring

NASA Technical Reports Server (NTRS)

Chervenak, James

2012-01-01

A document describes the fabrication of a two-dimensional microcalorimeter array that uses microstrip wiring and integrated heat sinking to enable use of high-performance pixel designs at kilopixel scales (32 X 32). Each pixel is the high-resolution design employed in small-array test devices, which consist of a Mo/Au TES (transition edge sensor) on a silicon nitride membrane and an electroplated Bi/Au absorber. The pixel pitch within the array is 300 microns, where absorbers 290 microns on a side are cantilevered over a silicon support grid with 100-micron-wide beams. The high-density wiring and heat sinking are both carried by the silicon beams to the edge of the array. All pixels are wired out to the array edge. ECR (electron cyclotron resonance) oxide underlayer is deposited underneath the sensor layer. The sensor (TES) layer consists of a superconducting underlayer and a normal metal top layer. If the sensor is deposited at high temperature, the ECR oxide can be vacuum annealed to improve film smoothness and etch characteristics. This process is designed to recover high-resolution, single-pixel x-ray microcalorimeter performance within arrays of arbitrarily large format. The critical current limiting parts of the circuit are designed to have simple interfaces that can be independently verified. The lead-to-TES interface is entirely determined in a single layer that has multiple points of interface to maximize critical current. The lead rails that overlap the TES sensor element contact both the superconducting underlayer and the TES normal metal

LinoSPAD: a time-resolved 256×1 CMOS SPAD line sensor system featuring 64 FPGA-based TDC channels running at up to 8.5 giga-events per second

NASA Astrophysics Data System (ADS)

Burri, Samuel; Homulle, Harald; Bruschini, Claudio; Charbon, Edoardo

2016-04-01

LinoSPAD is a reconfigurable camera sensor with a 256×1 CMOS SPAD (single-photon avalanche diode) pixel array connected to a low cost Xilinx Spartan 6 FPGA. The LinoSPAD sensor's line of pixels has a pitch of 24 μm and 40% fill factor. The FPGA implements an array of 64 TDCs and histogram engines capable of processing up to 8.5 giga-photons per second. The LinoSPAD sensor measures 1.68 mm×6.8 mm and each pixel has a direct digital output to connect to the FPGA. The chip is bonded on a carrier PCB to connect to the FPGA motherboard. 64 carry chain based TDCs sampled at 400 MHz can generate a timestamp every 7.5 ns with a mean time resolution below 25 ps per code. The 64 histogram engines provide time-of-arrival histograms covering up to 50 ns. An alternative mode allows the readout of 28 bit timestamps which have a range of up to 4.5 ms. Since the FPGA TDCs have considerable non-linearity we implemented a correction module capable of increasing histogram linearity at real-time. The TDC array is interfaced to a computer using a super-speed USB3 link to transfer over 150k histograms per second for the 12.5 ns reference period used in our characterization. After characterization and subsequent programming of the post-processing we measure an instrument response histogram shorter than 100 ps FWHM using a strong laser pulse with 50 ps FWHM. A timing resolution that when combined with the high fill factor makes the sensor well suited for a wide variety of applications from fluorescence lifetime microscopy over Raman spectroscopy to 3D time-of-flight.

Cat-eye effect target recognition with single-pixel detectors

NASA Astrophysics Data System (ADS)

Jian, Weijian; Li, Li; Zhang, Xiaoyue

2015-12-01

A prototype of cat-eye effect target recognition with single-pixel detectors is proposed. Based on the framework of compressive sensing, it is possible to recognize cat-eye effect targets by projecting a series of known random patterns and measuring the backscattered light with three single-pixel detectors in different locations. The prototype only requires simpler, less expensive detectors and extends well beyond the visible spectrum. The simulations are accomplished to evaluate the feasibility of the proposed prototype. We compared our results to that obtained from conventional cat-eye effect target recognition methods using area array sensor. The experimental results show that this method is feasible and superior to the conventional method in dynamic and complicated backgrounds.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

PubMed

Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

2018-01-03

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †

PubMed Central

Clarke, Andrew S.; Ivory, James; Holland, Andrew D.

2018-01-01

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths. PMID:29301379

Self-amplified CMOS image sensor using a current-mode readout circuit

NASA Astrophysics Data System (ADS)

Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

2014-05-01

The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

Analysis of simulated image sequences from sensors for restricted-visibility operations

NASA Technical Reports Server (NTRS)

Kasturi, Rangachar

1991-01-01

A real time model of the visible output from a 94 GHz sensor, based on a radiometric simulation of the sensor, was developed. A sequence of images as seen from an aircraft as it approaches for landing was simulated using this model. Thirty frames from this sequence of 200 x 200 pixel images were analyzed to identify and track objects in the image using the Cantata image processing package within the visual programming environment provided by the Khoros software system. The image analysis operations are described.

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

NASA Astrophysics Data System (ADS)

Savic, N.; Beyer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.

2016-12-01

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

NASA Astrophysics Data System (ADS)

Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Gruner, S. M.

2018-01-01

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

Demosaiced pixel super-resolution in digital holography for multiplexed computational color imaging on-a-chip (Conference Presentation)

NASA Astrophysics Data System (ADS)

Wu, Yichen; Zhang, Yibo; Luo, Wei; Ozcan, Aydogan

2017-03-01

Digital holographic on-chip microscopy achieves large space-bandwidth-products (e.g., >1 billion) by making use of pixel super-resolution techniques. To synthesize a digital holographic color image, one can take three sets of holograms representing the red (R), green (G) and blue (B) parts of the spectrum and digitally combine them to synthesize a color image. The data acquisition efficiency of this sequential illumination process can be improved by 3-fold using wavelength-multiplexed R, G and B illumination that simultaneously illuminates the sample, and using a Bayer color image sensor with known or calibrated transmission spectra to digitally demultiplex these three wavelength channels. This demultiplexing step is conventionally used with interpolation-based Bayer demosaicing methods. However, because the pixels of different color channels on a Bayer image sensor chip are not at the same physical location, conventional interpolation-based demosaicing process generates strong color artifacts, especially at rapidly oscillating hologram fringes, which become even more pronounced through digital wave propagation and phase retrieval processes. Here, we demonstrate that by merging the pixel super-resolution framework into the demultiplexing process, such color artifacts can be greatly suppressed. This novel technique, termed demosaiced pixel super-resolution (D-PSR) for digital holographic imaging, achieves very similar color imaging performance compared to conventional sequential R,G,B illumination, with 3-fold improvement in image acquisition time and data-efficiency. We successfully demonstrated the color imaging performance of this approach by imaging stained Pap smears. The D-PSR technique is broadly applicable to high-throughput, high-resolution digital holographic color microscopy techniques that can be used in resource-limited-settings and point-of-care offices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

NDVI, scale invariance and the modifiable areal unit problem: An assessment of vegetation in the Adelaide Parklands.

PubMed

Nouri, Hamideh; Anderson, Sharolyn; Sutton, Paul; Beecham, Simon; Nagler, Pamela; Jarchow, Christopher J; Roberts, Dar A

2017-04-15

This research addresses the question as to whether or not the Normalised Difference Vegetation Index (NDVI) is scale invariant (i.e. constant over spatial aggregation) for pure pixels of urban vegetation. It has been long recognized that there are issues related to the modifiable areal unit problem (MAUP) pertaining to indices such as NDVI and images at varying spatial resolutions. These issues are relevant to using NDVI values in spatial analyses. We compare two different methods of calculation of a mean NDVI: 1) using pixel values of NDVI within feature/object boundaries and 2) first calculating the mean red and mean near-infrared across all feature pixels and then calculating NDVI. We explore the nature and magnitude of these differences for images taken from two sensors, a 1.24m resolution WorldView-3 and a 0.1m resolution digital aerial image. We apply these methods over an urban park located in the Adelaide Parklands of South Australia. We demonstrate that the MAUP is not an issue for calculation of NDVI within a sensor for pure urban vegetation pixels. This may prove useful for future rule-based monitoring of the ecosystem functioning of green infrastructure. Copyright © 2017 Elsevier B.V. All rights reserved.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M. (Inventor); Hancock, Bruce R. (Inventor)

2017-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Smith, Roger M (Inventor); Hancock, Bruce R. (Inventor); Cole, David (Inventor); Seshadri, Suresh (Inventor)

2013-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

An airborne multispectral imaging system based on two consumer-grade cameras for agricultural remote sensing

USDA-ARS?s Scientific Manuscript database

This paper describes the design and evaluation of an airborne multispectral imaging system based on two identical consumer-grade cameras for agricultural remote sensing. The cameras are equipped with a full-frame complementary metal oxide semiconductor (CMOS) sensor with 5616 × 3744 pixels. One came...

ALPIDE: the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Šuljić, M.

2016-11-01

The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (2019-2020) of the CERN Large Hadron Collider (LHC) . The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of ~10 m2, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The ALPIDE chip, based on TowerJazz 180 nm CMOS Imaging Process, is being developed for this purpose. A particular process feature, the deep p-well, is exploited so the full CMOS logic can be implemented over the active sensor area without impinging on the deposited charge collection. ALPIDE is implemented on silicon wafers with a high resistivity epitaxial layer. A single chip measures 15 mm by 30 mm and contains half a million pixels distributed in 512 rows and 1024 columns. In-pixel circuitry features amplification, shaping, discrimination and multi-event buffering. The readout is hit driven i.e. only addresses of hit pixels are sent to the periphery. The upgrade of the ITS presents two different sets of requirements for sensors of the inner and of the outer layers due to the significantly different track density, radiation level and active detector surface. The ALPIDE chip fulfils the stringent requirements in both cases. The detection efficiency is higher than 99%, fake-hit probability is orders of magnitude lower than the required 10-6 and spatial resolution within the required 5 μm. This performance is to be maintained even after a total ionising does (TID) of 2.7 Mrad and a non-ionising energy loss (NIEL) fluence of 1.7 × 1013 1 MeV neq/cm2, which is above what is expected during the detector lifetime. Readout rate of 100 kHz is provided and the power density of ALPIDE is less than 40 mW/cm2. This contribution will provide a summary of the ALPIDE features and main test results.

Optical and electrical characterization of a back-thinned CMOS active pixel sensor

NASA Astrophysics Data System (ADS)

Blue, Andrew; Clark, A.; Houston, S.; Laing, A.; Maneuski, D.; Prydderch, M.; Turchetta, R.; O'Shea, V.

2009-06-01

This work will report on the first work on the characterization of a back-thinned Vanilla-a 512×512 (25 μm squared) active pixel sensor (APS). Characterization of the detectors was carried out through the analysis of photon transfer curves to yield a measurement of full well capacity, noise levels, gain constants and linearity. Spectral characterization of the sensors was also performed in the visible and UV regions. A full comparison against non-back-thinned front illuminated Vanilla sensors is included. Such measurements suggest that the Vanilla APS will be suitable for a wide range of applications, including particle physics and biomedical imaging.

Silicon pixel-detector R&D for CLIC

NASA Astrophysics Data System (ADS)

Nürnberg, A.

2016-11-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (~ 0.2%X0 per layer for the vertex region and ~ 1%X0 per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50 μm to 150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 6525 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs.

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering

PubMed Central

Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro

2017-01-01

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system. PMID:29120358

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Joel T.; Becker, Julian; Shanks, Katherine S.

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that formmore » when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.« less

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering.

PubMed

Mars, Kamel; Lioe, De Xing; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

2017-11-09

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

Laser doppler blood flow imaging using a CMOS imaging sensor with on-chip signal processing.

PubMed

He, Diwei; Nguyen, Hoang C; Hayes-Gill, Barrie R; Zhu, Yiqun; Crowe, John A; Gill, Cally; Clough, Geraldine F; Morgan, Stephen P

2013-09-18

The first fully integrated 2D CMOS imaging sensor with on-chip signal processing for applications in laser Doppler blood flow (LDBF) imaging has been designed and tested. To obtain a space efficient design over 64 × 64 pixels means that standard processing electronics used off-chip cannot be implemented. Therefore the analog signal processing at each pixel is a tailored design for LDBF signals with balanced optimization for signal-to-noise ratio and silicon area. This custom made sensor offers key advantages over conventional sensors, viz. the analog signal processing at the pixel level carries out signal normalization; the AC amplification in combination with an anti-aliasing filter allows analog-to-digital conversion with a low number of bits; low resource implementation of the digital processor enables on-chip processing and the data bottleneck that exists between the detector and processing electronics has been overcome. The sensor demonstrates good agreement with simulation at each design stage. The measured optical performance of the sensor is demonstrated using modulated light signals and in vivo blood flow experiments. Images showing blood flow changes with arterial occlusion and an inflammatory response to a histamine skin-prick demonstrate that the sensor array is capable of detecting blood flow signals from tissue.

Toward one Giga frames per second--evolution of in situ storage image sensors.

PubMed

Etoh, Takeharu G; Son, Dao V T; Yamada, Tetsuo; Charbon, Edoardo

2013-04-08

The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct intrusion of light and migration of signal electrons to the storage area on the frontside, a cross-sectional sensor structure with thick pnpn layers was developed, and named "Tetratified structure". By folding and looping in-pixel storage CCDs, an image signal accumulation sensor, ISAS, is proposed. The ISAS has a new function, the in-pixel signal accumulation, in addition to the ultra-high-speed imaging. To achieve much higher frame rate, a multi-collection-gate (MCG) BSI image sensor architecture is proposed. The photoreceptive area forms a honeycomb-like shape. Performance of a hexagonal CCD-type MCG BSI sensor is examined by simulations. The highest frame rate is theoretically more than 1Gfps. For the near future, a stacked hybrid CCD/CMOS MCG image sensor seems most promising. The associated problems are discussed. A fine TSV process is the key technology to realize the structure.

Design of an Intelligent Front-End Signal Conditioning Circuit for IR Sensors

NASA Astrophysics Data System (ADS)

de Arcas, G.; Ruiz, M.; Lopez, J. M.; Gutierrez, R.; Villamayor, V.; Gomez, L.; Montojo, Mª. T.

2008-02-01

This paper presents the design of an intelligent front-end signal conditioning system for IR sensors. The system has been developed as an interface between a PbSe IR sensor matrix and a TMS320C67x digital signal processor. The system architecture ensures its scalability so it can be used for sensors with different matrix sizes. It includes an integrator based signal conditioning circuit, a data acquisition converter block, and a FPGA based advanced control block that permits including high level image preprocessing routines such as faulty pixel detection and sensor calibration in the signal conditioning front-end. During the design phase virtual instrumentation technologies proved to be a very valuable tool for prototyping when choosing the best A/D converter type for the application. Development time was significantly reduced due to the use of this technology.

Multipurpose active pixel sensor (APS)-based microtracker

NASA Astrophysics Data System (ADS)

Eisenman, Allan R.; Liebe, Carl C.; Zhu, David Q.

1998-12-01

A new, photon-sensitive, imaging array, the active pixel sensor (APS) has emerged as a competitor to the CCD imager for use in star and target trackers. The Jet Propulsion Laboratory (JPL) has undertaken a program to develop a new generation, highly integrated, APS-based, multipurpose tracker: the Programmable Intelligent Microtracker (PIM). The supporting hardware used in the PIM has been carefully selected to enhance the inherent advantages of the APS. Adequate computation power is included to perform star identification, star tracking, attitude determination, space docking, feature tracking, descent imaging for landing control, and target tracking capabilities. Its first version uses a JPL developed 256 X 256-pixel APS and an advanced 32-bit RISC microcontroller. By taking advantage of the unique features of the APS/microcontroller combination, the microtracker will achieve about an order-of-magnitude reduction in mass and power consumption compared to present state-of-the-art star trackers. It will also add the advantage of programmability to enable it to perform a variety of star, other celestial body, and target tracking tasks. The PIM is already proving the usefulness of its design concept for space applications. It is demonstrating the effectiveness of taking such an integrated approach in building a new generation of high performance, general purpose, tracking instruments to be applied to a large variety of future space missions.

Hyperspectral Imaging Sensors and the Marine Coastal Zone

NASA Technical Reports Server (NTRS)

Richardson, Laurie L.

2000-01-01

Hyperspectral imaging sensors greatly expand the potential of remote sensing to assess, map, and monitor marine coastal zones. Each pixel in a hyperspectral image contains an entire spectrum of information. As a result, hyperspectral image data can be processed in two very different ways: by image classification techniques, to produce mapped outputs of features in the image on a regional scale; and by use of spectral analysis of the spectral data embedded within each pixel of the image. The latter is particularly useful in marine coastal zones because of the spectral complexity of suspended as well as benthic features found in these environments. Spectral-based analysis of hyperspectral (AVIRIS) imagery was carried out to investigate a marine coastal zone of South Florida, USA. Florida Bay is a phytoplankton-rich estuary characterized by taxonomically distinct phytoplankton assemblages and extensive seagrass beds. End-member spectra were extracted from AVIRIS image data corresponding to ground-truth sample stations and well-known field sites. Spectral libraries were constructed from the AVIRIS end-member spectra and used to classify images using the Spectral Angle Mapper (SAM) algorithm, a spectral-based approach that compares the spectrum, in each pixel of an image with each spectrum in a spectral library. Using this approach different phytoplankton assemblages containing diatoms, cyanobacteria, and green microalgae, as well as benthic community (seagrasses), were mapped.

A safety monitoring system for taxi based on CMOS imager

NASA Astrophysics Data System (ADS)

Liu, Zhi

2005-01-01

CMOS image sensors now become increasingly competitive with respect to their CCD counterparts, while adding advantages such as no blooming, simpler driving requirements and the potential of on-chip integration of sensor, analogue circuitry, and digital processing functions. A safety monitoring system for taxi based on cmos imager that can record field situation when unusual circumstance happened is described in this paper. The monitoring system is based on a CMOS imager (OV7120), which can output digital image data through parallel pixel data port. The system consists of a CMOS image sensor, a large capacity NAND FLASH ROM, a USB interface chip and a micro controller (AT90S8515). The structure of whole system and the test data is discussed and analyzed in detail.

High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

NASA Astrophysics Data System (ADS)

Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

2017-09-01

We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

2015-10-01

The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

Further applications for mosaic pixel FPA technology

NASA Astrophysics Data System (ADS)

Liddiard, Kevin C.

2011-06-01

In previous papers to this SPIE forum the development of novel technology for next generation PIR security sensors has been described. This technology combines the mosaic pixel FPA concept with low cost optics and purpose-designed readout electronics to provide a higher performance and affordable alternative to current PIR sensor technology, including an imaging capability. Progressive development has resulted in increased performance and transition from conventional microbolometer fabrication to manufacture on 8 or 12 inch CMOS/MEMS fabrication lines. A number of spin-off applications have been identified. In this paper two specific applications are highlighted: high performance imaging IRFPA design and forest fire detection. The former involves optional design for small pixel high performance imaging. The latter involves cheap expendable sensors which can detect approaching fire fronts and send alarms with positional data via mobile phone or satellite link. We also introduce to this SPIE forum the application of microbolometer IR sensor technology to IoT, the Internet of Things.

Phonon-mediated superconducting transition-edge sensor X-ray detectors for use in astronomy

NASA Astrophysics Data System (ADS)

Leman, Steven W.; Martinez-Galarce, Dennis S.; Brink, Paul L.; Cabrera, Blas; Castle, Joseph P.; Morse, Kathleen; Stern, Robert A.; Tomada, Astrid

2004-09-01

Superconducting Transition-Edge Sensors (TESs) are generating a great deal of interest in the areas of x-ray astrophysics and space science, particularly to develop them as large-array, imaging x-ray spectrometers. We are developing a novel concept that is based on position-sensitive macro-pixels placing TESs on the backside of a silicon or germanium absorber. Each x-ray absorbed will be position (X/δX and Y/δY ~ 100) and energy (E/δE ~ 1000) resolved via four distributed TES readouts. In the future, combining such macropixels with advances in multiplexing could lead to 30 by 30 arrays of close-packed macro-pixels equivalent to imaging instruments of 10 megapixels or more. We report on our progress to date and discuss its application to a plausible solar satellite mission and plans for future development.

Portable lensless wide-field microscopy imaging platform based on digital inline holography and multi-frame pixel super-resolution

PubMed Central

Sobieranski, Antonio C; Inci, Fatih; Tekin, H Cumhur; Yuksekkaya, Mehmet; Comunello, Eros; Cobra, Daniel; von Wangenheim, Aldo; Demirci, Utkan

2017-01-01

In this paper, an irregular displacement-based lensless wide-field microscopy imaging platform is presented by combining digital in-line holography and computational pixel super-resolution using multi-frame processing. The samples are illuminated by a nearly coherent illumination system, where the hologram shadows are projected into a complementary metal-oxide semiconductor-based imaging sensor. To increase the resolution, a multi-frame pixel resolution approach is employed to produce a single holographic image from multiple frame observations of the scene, with small planar displacements. Displacements are resolved by a hybrid approach: (i) alignment of the LR images by a fast feature-based registration method, and (ii) fine adjustment of the sub-pixel information using a continuous optimization approach designed to find the global optimum solution. Numerical method for phase-retrieval is applied to decode the signal and reconstruct the morphological details of the analyzed sample. The presented approach was evaluated with various biological samples including sperm and platelets, whose dimensions are in the order of a few microns. The obtained results demonstrate a spatial resolution of 1.55 µm on a field-of-view of ≈30 mm2. PMID:29657866

Evaluation of a single-pixel one-transistor active pixel sensor for fingerprint imaging

NASA Astrophysics Data System (ADS)

Xu, Man; Ou, Hai; Chen, Jun; Wang, Kai

2015-08-01

Since it first appeared in iPhone 5S in 2013, fingerprint identification (ID) has rapidly gained popularity among consumers. Current fingerprint-enabled smartphones unanimously consists of a discrete sensor to perform fingerprint ID. This architecture not only incurs higher material and manufacturing cost, but also provides only static identification and limited authentication. Hence as the demand for a thinner, lighter, and more secure handset grows, we propose a novel pixel architecture that is a photosensitive device embedded in a display pixel and detects the reflected light from the finger touch for high resolution, high fidelity and dynamic biometrics. To this purpose, an amorphous silicon (a-Si:H) dual-gate photo TFT working in both fingerprint-imaging mode and display-driving mode will be developed.

A PIXEL COMPOSITION-BASED REFERENCE DATA SET FOR THEMATIC ACCURACY ASSESSMENT

EPA Science Inventory

Developing reference data sets for accuracy assessment of land-cover classifications derived from coarse spatial resolution sensors such as MODIS can be difficult due to the large resolution differences between the image data and available reference data sources. Ideally, the spa...

An inverter-based capacitive trans-impedance amplifier readout with offset cancellation and temporal noise reduction for IR focal plane array

NASA Astrophysics Data System (ADS)

Chen, Hsin-Han; Hsieh, Chih-Cheng

2013-09-01

This paper presents a readout integrated circuit (ROIC) with inverter-based capacitive trans-impedance amplifier (CTIA) and pseudo-multiple sampling technique for infrared focal plane array (IRFPA). The proposed inverter-based CTIA with a coupling capacitor [1], executing auto-zeroing technique to cancel out the varied offset voltage from process variation, is used to substitute differential amplifier in conventional CTIA. The tunable detector bias is applied from a global external bias before exposure. This scheme not only retains stable detector bias voltage and signal injection efficiency, but also reduces the pixel area as well. Pseudo-multiple sampling technique [2] is adopted to reduce the temporal noise of readout circuit. The noise reduction performance is comparable to the conventional multiple sampling operation without need of longer readout time proportional to the number of samples. A CMOS image sensor chip with 55×65 pixel array has been fabricated in 0.18um CMOS technology. It achieves a 12um×12um pixel size, a frame rate of 72 fps, a power-per-pixel of 0.66uW/pixel, and a readout temporal noise of 1.06mVrms (16 times of pseudo-multiple sampling), respectively.

Real-time distributed video coding for 1K-pixel visual sensor networks

NASA Astrophysics Data System (ADS)

Hanca, Jan; Deligiannis, Nikos; Munteanu, Adrian

2016-07-01

Many applications in visual sensor networks (VSNs) demand the low-cost wireless transmission of video data. In this context, distributed video coding (DVC) has proven its potential to achieve state-of-the-art compression performance while maintaining low computational complexity of the encoder. Despite their proven capabilities, current DVC solutions overlook hardware constraints, and this renders them unsuitable for practical implementations. This paper introduces a DVC architecture that offers highly efficient wireless communication in real-world VSNs. The design takes into account the severe computational and memory constraints imposed by practical implementations on low-resolution visual sensors. We study performance-complexity trade-offs for feedback-channel removal, propose learning-based techniques for rate allocation, and investigate various simplifications of side information generation yielding real-time decoding. The proposed system is evaluated against H.264/AVC intra, Motion-JPEG, and our previously designed DVC prototype for low-resolution visual sensors. Extensive experimental results on various data show significant improvements in multiple configurations. The proposed encoder achieves real-time performance on a 1k-pixel visual sensor mote. Real-time decoding is performed on a Raspberry Pi single-board computer or a low-end notebook PC. To the best of our knowledge, the proposed codec is the first practical DVC deployment on low-resolution VSNs.

Astronomical Polarimetry with the RIT Polarization Imaging Camera

NASA Astrophysics Data System (ADS)

Vorobiev, Dmitry V.; Ninkov, Zoran; Brock, Neal

2018-06-01

In the last decade, imaging polarimeters based on micropolarizer arrays have been developed for use in terrestrial remote sensing and metrology applications. Micropolarizer-based sensors are dramatically smaller and more mechanically robust than other polarimeters with similar spectral response and snapshot capability. To determine the suitability of these new polarimeters for astronomical applications, we developed the RIT Polarization Imaging Camera to investigate the performance of these devices, with a special attention to the low signal-to-noise regime. We characterized the device performance in the lab, by determining the relative throughput, efficiency, and orientation of every pixel, as a function of wavelength. Using the resulting pixel response model, we developed demodulation procedures for aperture photometry and imaging polarimetry observing modes. We found that, using the current calibration, RITPIC is capable of detecting polarization signals as small as ∼0.3%. The relative ease of data collection, calibration, and analysis provided by these sensors suggest than they may become an important tool for a number of astronomical targets.

Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels.

PubMed

Ballin, Jamie Alexander; Crooks, Jamie Phillip; Dauncey, Paul Dominic; Magnan, Anne-Marie; Mikami, Yoshiari; Miller, Owen Daniel; Noy, Matthew; Rajovic, Vladimir; Stanitzki, Marcel; Stefanov, Konstantin; Turchetta, Renato; Tyndel, Mike; Villani, Enrico Giulio; Watson, Nigel Keith; Wilson, John Allan

2008-09-02

In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 mm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

Neural Network for Image-to-Image Control of Optical Tweezers

NASA Technical Reports Server (NTRS)

Decker, Arthur J.; Anderson, Robert C.; Weiland, Kenneth E.; Wrbanek, Susan Y.

2004-01-01

A method is discussed for using neural networks to control optical tweezers. Neural-net outputs are combined with scaling and tiling to generate 480 by 480-pixel control patterns for a spatial light modulator (SLM). The SLM can be combined in various ways with a microscope to create movable tweezers traps with controllable profiles. The neural nets are intended to respond to scattered light from carbon and silicon carbide nanotube sensors. The nanotube sensors are to be held by the traps for manipulation and calibration. Scaling and tiling allow the 100 by 100-pixel maximum resolution of the neural-net software to be applied in stages to exploit the full 480 by 480-pixel resolution of the SLM. One of these stages is intended to create sensitive null detectors for detecting variations in the scattered light from the nanotube sensors.

Uncooled Terahertz real-time imaging 2D arrays developed at LETI: present status and perspectives

NASA Astrophysics Data System (ADS)

Simoens, François; Meilhan, Jérôme; Dussopt, Laurent; Nicolas, Jean-Alain; Monnier, Nicolas; Sicard, Gilles; Siligaris, Alexandre; Hiberty, Bruno

2017-05-01

As for other imaging sensor markets, whatever is the technology, the commercial spread of terahertz (THz) cameras has to fulfil simultaneously the criteria of high sensitivity and low cost and SWAP (size, weight and power). Monolithic silicon-based 2D sensors integrated in uncooled THz real-time cameras are good candidates to meet these requirements. Over the past decade, LETI has been studying and developing such arrays with two complimentary technological approaches, i.e. antenna-coupled silicon bolometers and CMOS Field Effect Transistors (FET), both being compatible to standard silicon microelectronics processes. LETI has leveraged its know-how in thermal infrared bolometer sensors in developing a proprietary architecture for THz sensing. High technological maturity has been achieved as illustrated by the demonstration of fast scanning of large field of view and the recent birth of a commercial camera. In the FET-based THz field, recent works have been focused on innovative CMOS read-out-integrated circuit designs. The studied architectures take advantage of the large pixel pitch to enhance the flexibility and the sensitivity: an embedded in-pixel configurable signal processing chain dramatically reduces the noise. Video sequences at 100 frames per second using our 31x31 pixels 2D Focal Plane Arrays (FPA) have been achieved. The authors describe the present status of these developments and perspectives of performance evolutions are discussed. Several experimental imaging tests are also presented in order to illustrate the capabilities of these arrays to address industrial applications such as non-destructive testing (NDT), security or quality control of food.

Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor

PubMed Central

Ishida, Haruki; Kagawa, Keiichiro; Komuro, Takashi; Zhang, Bo; Seo, Min-Woong; Takasawa, Taishi; Yasutomi, Keita; Kawahito, Shoji

2018-01-01

A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise. Although semi-photon-counting-level (SPCL) ultra-low noise complementary-metal-oxide-semiconductor (CMOS) image sensors (CISs) with high conversion gain pixels have emerged, they still suffer from huge RTS noise, which is inherent to the CISs. The proposed method utilizes a multi-aperture (MA) camera that is composed of multiple sets of an SPCL CIS and a moderately fast and compact imaging lens to emulate a very fast single lens. Due to the redundancy of the MA camera, the RTS noise is removed by the maximum likelihood estimation where noise characteristics are modeled by the probability density distribution. In the proposed method, the photon shot noise is also relatively reduced because of the averaging effect, where the pixel values of all the multiple apertures are considered. An extremely low-light condition that the maximum number of electrons per aperture was the only 2e− was simulated. PSNRs of a test image for simple averaging, selective averaging (our previous method), and the proposed method were 11.92 dB, 11.61 dB, and 13.14 dB, respectively. The selective averaging, which can remove RTS noise, was worse than the simple averaging because it ignores the pixels with RTS noise and photon shot noise was less improved. The simulation results showed that the proposed method provided the best noise reduction performance. PMID:29587424

Rigorous Photogrammetric Processing of CHANG'E-1 and CHANG'E-2 Stereo Imagery for Lunar Topographic Mapping

NASA Astrophysics Data System (ADS)

Di, K.; Liu, Y.; Liu, B.; Peng, M.

2012-07-01

Chang'E-1(CE-1) and Chang'E-2(CE-2) are the two lunar orbiters of China's lunar exploration program. Topographic mapping using CE-1 and CE-2 images is of great importance for scientific research as well as for preparation of landing and surface operation of Chang'E-3 lunar rover. In this research, we developed rigorous sensor models of CE-1 and CE-2 CCD cameras based on push-broom imaging principle with interior and exterior orientation parameters. Based on the rigorous sensor model, the 3D coordinate of a ground point in lunar body-fixed (LBF) coordinate system can be calculated by space intersection from the image coordinates of con-jugate points in stereo images, and the image coordinates can be calculated from 3D coordinates by back-projection. Due to uncer-tainties of the orbit and the camera, the back-projected image points are different from the measured points. In order to reduce these inconsistencies and improve precision, we proposed two methods to refine the rigorous sensor model: 1) refining EOPs by correcting the attitude angle bias, 2) refining the interior orientation model by calibration of the relative position of the two linear CCD arrays. Experimental results show that the mean back-projection residuals of CE-1 images are reduced to better than 1/100 pixel by method 1 and the mean back-projection residuals of CE-2 images are reduced from over 20 pixels to 0.02 pixel by method 2. Consequently, high precision DEM (Digital Elevation Model) and DOM (Digital Ortho Map) are automatically generated.

Amorphous In–Ga–Zn–O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu

Purpose: The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67–3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. Methods: The indirect x-ray detector is based on a combination of a novelmore » low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. Results: The result demonstrates that a large charge gain of 31–122 is achieved for the proposed high-mobility (5–20 cm{sup 2}/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10{sup −13} A) and OPD (<10{sup −8} A/cm{sup 2}) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0.3 mR without a significant reduction of DQE. The signal-to-noise ratio of the a-IGZO APS imager under 0.3 mR x-ray exposure is comparable to that of a-Si:H passive pixel sensor imager under 1 mR, indicating good image quality under low dose. A threefold reduction of current tomosynthesis dose is expected if proposed technology is combined with an advanced DBT image reconstruction method. Conclusions: The proposed a-IGZO APS x-ray imager with a pixel pitch <75 μm is capable to achieve a high spatial frequency (>6.67 lp/mm) and a low dose (<0.4 mGy) in next generation DBT systems.« less

Amorphous In-Ga-Zn-O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis.

PubMed

Zhao, Chumin; Kanicki, Jerzy

2014-09-01

The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67-3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In-Ga-Zn-O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. The indirect x-ray detector is based on a combination of a novel low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. The result demonstrates that a large charge gain of 31-122 is achieved for the proposed high-mobility (5-20 cm2/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10(-13) A) and OPD (<10(-8) A/cm2) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per projection can be reduced from 1 to 0.3 mR without a significant reduction of DQE. The signal-to-noise ratio of the a-IGZO APS imager under 0.3 mR x-ray exposure is comparable to that of a-Si:H passive pixel sensor imager under 1 mR, indicating good image quality under low dose. A threefold reduction of current tomosynthesis dose is expected if proposed technology is combined with an advanced DBT image reconstruction method. The proposed a-IGZO APS x-ray imager with a pixel pitch<75 μm is capable to achieve a high spatial frequency (>6.67 lp/mm) and a low dose (<0.4 mGy) in next generation DBT systems.

Comparison of fractal dimensions based on segmented NDVI fields obtained from different remote sensors.

NASA Astrophysics Data System (ADS)

Alonso, C.; Benito, R. M.; Tarquis, A. M.

2012-04-01

Satellite image data have become an important source of information for monitoring vegetation and mapping land cover at several scales. Beside this, the distribution and phenology of vegetation is largely associated with climate, terrain characteristics and human activity. Various vegetation indices have been developed for qualitative and quantitative assessment of vegetation using remote spectral measurements. In particular, sensors with spectral bands in the red (RED) and near-infrared (NIR) lend themselves well to vegetation monitoring and based on them [(NIR - RED) / (NIR + RED)] Normalized Difference Vegetation Index (NDVI) has been widespread used. Given that the characteristics of spectral bands in RED and NIR vary distinctly from sensor to sensor, NDVI values based on data from different instruments will not be directly comparable. The spatial resolution also varies significantly between sensors, as well as within a given scene in the case of wide-angle and oblique sensors. As a result, NDVI values will vary according to combinations of the heterogeneity and scale of terrestrial surfaces and pixel footprint sizes. Therefore, the question arises as to the impact of differences in spectral and spatial resolutions on vegetation indices like the NDVI. The aim of this study is to establish a comparison between two different sensors in their NDVI values at different spatial resolutions. Scaling analysis and modeling techniques are increasingly understood to be the result of nonlinear dynamic mechanisms repeating scale after scale from large to small scales leading to non-classical resolution dependencies. In the remote sensing framework the main characteristic of sensors images is the high local variability in their values. This variability is a consequence of the increase in spatial and radiometric resolution that implies an increase in complexity that it is necessary to characterize. Fractal and multifractal techniques has been proven to be useful to extract such complexities from remote sensing images and will applied in this study to see the scaling behavior for each sensor in generalized fractal dimensions. The studied area is located in the provinces of Caceres and Salamanca (east of Iberia Peninsula) with an extension of 32 x 32 km2. The altitude in the area varies from 1,560 to 320 m, comprising natural vegetation in the mountain area (forest and bushes) and agricultural crops in the valleys. Scaling analysis were applied to Landsat-5 and MODIS TERRA to the normalized derived vegetation index (NDVI) on the same region with one day of difference, 13 and 12 of July 2003 respectively. From these images the area of interest was selected obtaining 1024 x 1024 pixels for Landsat image and 128 x 128 pixels for MODIS image. This implies that the resolution for MODIS is 250x250 m. and for Landsat is 30x30 m. From the reflectance data obtained from NIR and RED bands, NDVI was calculated for each image focusing this study on 0.2 to 0.5 ranges of values. Once that both NDVI fields were obtained several fractal dimensions were estimated in each one segmenting the values in 0.20-0.25, 0.25-0.30 and so on to rich 0.45-0.50. In all the scaling analysis the scale size length was expressed in meters, and not in pixels, to make the comparison between both sensors possible. Results are discussed. Acknowledgements This work has been supported by the Spanish MEC under Projects No. AGL2010-21501/AGR, MTM2009-14621 and i-MATH No. CSD2006-00032

Spatio-thermal depth correction of RGB-D sensors based on Gaussian processes in real-time

NASA Astrophysics Data System (ADS)

Heindl, Christoph; Pönitz, Thomas; Stübl, Gernot; Pichler, Andreas; Scharinger, Josef

2018-04-01

Commodity RGB-D sensors capture color images along with dense pixel-wise depth information in real-time. Typical RGB-D sensors are provided with a factory calibration and exhibit erratic depth readings due to coarse calibration values, ageing and thermal influence effects. This limits their applicability in computer vision and robotics. We propose a novel method to accurately calibrate depth considering spatial and thermal influences jointly. Our work is based on Gaussian Process Regression in a four dimensional Cartesian and thermal domain. We propose to leverage modern GPUs for dense depth map correction in real-time. For reproducibility we make our dataset and source code publicly available.

Energy weighted x-ray dark-field imaging.

PubMed

Pelzer, Georg; Zang, Andrea; Anton, Gisela; Bayer, Florian; Horn, Florian; Kraus, Manuel; Rieger, Jens; Ritter, Andre; Wandner, Johannes; Weber, Thomas; Fauler, Alex; Fiederle, Michael; Wong, Winnie S; Campbell, Michael; Meiser, Jan; Meyer, Pascal; Mohr, Jürgen; Michel, Thilo

2014-10-06

The dark-field image obtained in grating-based x-ray phase-contrast imaging can provide information about the objects' microstructures on a scale smaller than the pixel size even with low geometric magnification. In this publication we demonstrate that the dark-field image quality can be enhanced with an energy-resolving pixel detector. Energy-resolved x-ray dark-field images were acquired with a 16-energy-channel photon-counting pixel detector with a 1 mm thick CdTe sensor in a Talbot-Lau x-ray interferometer. A method for contrast-noise-ratio (CNR) enhancement is proposed and validated experimentally. In measurements, a CNR improvement by a factor of 1.14 was obtained. This is equivalent to a possible radiation dose reduction of 23%.

New SOFRADIR 10μm pixel pitch infrared products

NASA Astrophysics Data System (ADS)

Lefoul, X.; Pere-Laperne, N.; Augey, T.; Rubaldo, L.; Aufranc, Sébastien; Decaens, G.; Ricard, N.; Mazaleyrat, E.; Billon-Lanfrey, D.; Gravrand, Olivier; Bisotto, Sylvette

2014-10-01

Recent advances in miniaturization of IR imaging technology have led to a growing market for mini thermal-imaging sensors. In that respect, Sofradir development on smaller pixel pitch has made much more compact products available to the users. When this competitive advantage is mixed with smaller coolers, made possible by HOT technology, we achieved valuable reductions in the size, weight and power of the overall package. At the same time, we are moving towards a global offer based on digital interfaces that provides our customers simplifications at the IR system design process while freeing up more space. This paper discusses recent developments on hot and small pixel pitch technologies as well as efforts made on compact packaging solution developed by SOFRADIR in collaboration with CEA-LETI.

Automatic relative RPC image model bias compensation through hierarchical image matching for improving DEM quality

NASA Astrophysics Data System (ADS)

Noh, Myoung-Jong; Howat, Ian M.

2018-02-01

The quality and efficiency of automated Digital Elevation Model (DEM) extraction from stereoscopic satellite imagery is critically dependent on the accuracy of the sensor model used for co-locating pixels between stereo-pair images. In the absence of ground control or manual tie point selection, errors in the sensor models must be compensated with increased matching search-spaces, increasing both the computation time and the likelihood of spurious matches. Here we present an algorithm for automatically determining and compensating the relative bias in Rational Polynomial Coefficients (RPCs) between stereo-pairs utilizing hierarchical, sub-pixel image matching in object space. We demonstrate the algorithm using a suite of image stereo-pairs from multiple satellites over a range stereo-photogrammetrically challenging polar terrains. Besides providing a validation of the effectiveness of the algorithm for improving DEM quality, experiments with prescribed sensor model errors yield insight into the dependence of DEM characteristics and quality on relative sensor model bias. This algorithm is included in the Surface Extraction through TIN-based Search-space Minimization (SETSM) DEM extraction software package, which is the primary software used for the U.S. National Science Foundation ArcticDEM and Reference Elevation Model of Antarctica (REMA) products.

Pixel-based flood mapping from SAR imagery: a comparison of approaches

NASA Astrophysics Data System (ADS)

Landuyt, Lisa; Van Wesemael, Alexandra; Van Coillie, Frieke M. B.; Verhoest, Niko E. C.

2017-04-01

Due to their all-weather, day and night capabilities, SAR sensors have been shown to be particularly suitable for flood mapping applications. Thus, they can provide spatially-distributed flood extent data which are valuable for calibrating, validating and updating flood inundation models. These models are an invaluable tool for water managers, to take appropriate measures in times of high water levels. Image analysis approaches to delineate flood extent on SAR imagery are numerous. They can be classified into two categories, i.e. pixel-based and object-based approaches. Pixel-based approaches, e.g. thresholding, are abundant and in general computationally inexpensive. However, large discrepancies between these techniques exist and often subjective user intervention is needed. Object-based approaches require more processing but allow for the integration of additional object characteristics, like contextual information and object geometry, and thus have significant potential to provide an improved classification result. As means of benchmark, a selection of pixel-based techniques is applied on a ERS-2 SAR image of the 2006 flood event of River Dee, United Kingdom. This selection comprises Otsu thresholding, Kittler & Illingworth thresholding, the Fine To Coarse segmentation algorithm and active contour modelling. The different classification results are evaluated and compared by means of several accuracy measures, including binary performance measures.

Multiple Sensor Camera for Enhanced Video Capturing

NASA Astrophysics Data System (ADS)

Nagahara, Hajime; Kanki, Yoshinori; Iwai, Yoshio; Yachida, Masahiko

A resolution of camera has been drastically improved under a current request for high-quality digital images. For example, digital still camera has several mega pixels. Although a video camera has the higher frame-rate, the resolution of a video camera is lower than that of still camera. Thus, the high-resolution is incompatible with the high frame rate of ordinary cameras in market. It is difficult to solve this problem by a single sensor, since it comes from physical limitation of the pixel transfer rate. In this paper, we propose a multi-sensor camera for capturing a resolution and frame-rate enhanced video. Common multi-CCDs camera, such as 3CCD color camera, has same CCD for capturing different spectral information. Our approach is to use different spatio-temporal resolution sensors in a single camera cabinet for capturing higher resolution and frame-rate information separately. We build a prototype camera which can capture high-resolution (2588×1958 pixels, 3.75 fps) and high frame-rate (500×500, 90 fps) videos. We also proposed the calibration method for the camera. As one of the application of the camera, we demonstrate an enhanced video (2128×1952 pixels, 90 fps) generated from the captured videos for showing the utility of the camera.

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Light-controlled biphasic current stimulator IC using CMOS image sensors for high-resolution retinal prosthesis and in vitro experimental results with rd1 mouse.

PubMed

Oh, Sungjin; Ahn, Jae-Hyun; Lee, Sangmin; Ko, Hyoungho; Seo, Jong Mo; Goo, Yong-Sook; Cho, Dong-il Dan

2015-01-01

Retinal prosthetic devices stimulate retinal nerve cells with electrical signals proportional to the incident light intensities. For a high-resolution retinal prosthesis, it is necessary to reduce the size of the stimulator pixels as much as possible, because the retinal nerve cells are concentrated in a small area of approximately 5 mm × 5 mm. In this paper, a miniaturized biphasic current stimulator integrated circuit is developed for subretinal stimulation and tested in vitro. The stimulator pixel is miniaturized by using a complementary metal-oxide-semiconductor (CMOS) image sensor composed of three transistors. Compared to a pixel that uses a four-transistor CMOS image sensor, this new design reduces the pixel size by 8.3%. The pixel size is further reduced by simplifying the stimulation-current generating circuit, which provides a 43.9% size reduction when compared to the design reported to be the most advanced version to date for subretinal stimulation. The proposed design is fabricated using a 0.35 μm bipolar-CMOS-DMOS process. Each pixel is designed to fit in a 50 μ m × 55 μm area, which theoretically allows implementing more than 5000 pixels in the 5 mm × 5 mm area. Experimental results show that a biphasic current in the range of 0 to 300 μA at 12 V can be generated as a function of incident light intensities. Results from in vitro experiments with rd1 mice indicate that the proposed method can be effectively used for retinal prosthesis with a high resolution.

Improved Space Object Observation Techniques Using CMOS Detectors

NASA Astrophysics Data System (ADS)

Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

2013-08-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

Impact of sensor's point spread function on land cover characterization: Assessment and deconvolution

USGS Publications Warehouse

Huang, C.; Townshend, J.R.G.; Liang, S.; Kalluri, S.N.V.; DeFries, R.S.

2002-01-01

Measured and modeled point spread functions (PSF) of sensor systems indicate that a significant portion of the recorded signal of each pixel of a satellite image originates from outside the area represented by that pixel. This hinders the ability to derive surface information from satellite images on a per-pixel basis. In this study, the impact of the PSF of the Moderate Resolution Imaging Spectroradiometer (MODIS) 250 m bands was assessed using four images representing different landscapes. Experimental results showed that though differences between pixels derived with and without PSF effects were small on the average, the PSF generally brightened dark objects and darkened bright objects. This impact of the PSF lowered the performance of a support vector machine (SVM) classifier by 5.4% in overall accuracy and increased the overall root mean square error (RMSE) by 2.4% in estimating subpixel percent land cover. An inversion method based on the known PSF model reduced the signals originating from surrounding areas by as much as 53%. This method differs from traditional PSF inversion deconvolution methods in that the PSF was adjusted with lower weighting factors for signals originating from neighboring pixels than those specified by the PSF model. By using this deconvolution method, the lost classification accuracy due to residual impact of PSF effects was reduced to only 1.66% in overall accuracy. The increase in the RMSE of estimated subpixel land cover proportions due to the residual impact of PSF effects was reduced to 0.64%. Spatial aggregation also effectively reduced the errors in estimated land cover proportion images. About 50% of the estimation errors were removed after applying the deconvolution method and aggregating derived proportion images to twice their dimensional pixel size. ?? 2002 Elsevier Science Inc. All rights reserved.

Hit efficiency study of CMS prototype forward pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongwook; /Johns Hopkins U.

2006-01-01

In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

Miniature Wide-Angle Lens for Small-Pixel Electronic Camera

NASA Technical Reports Server (NTRS)

Mouroulils, Pantazis; Blazejewski, Edward

2009-01-01

A proposed wideangle lens is shown that would be especially well suited for an electronic camera in which the focal plane is occupied by an image sensor that has small pixels. The design of the lens is intended to satisfy requirements for compactness, high image quality, and reasonably low cost, while addressing issues peculiar to the operation of small-pixel image sensors. Hence, this design is expected to enable the development of a new generation of compact, high-performance electronic cameras. The lens example shown has a 60 degree field of view and a relative aperture (f-number) of 3.2. The main issues affecting the design are also shown.

Development of X-Ray Microcalorimeter Imaging Spectrometers for the X-Ray Surveyor Mission Concept

NASA Technical Reports Server (NTRS)

Bandler, Simon R.; Adams, Joseph S.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Betncourt-Martinez, Gabriele; Miniussi, Antoine R.;

Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

2016-10-06

FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

Study of cluster shapes in a monolithic active pixel detector

NASA Astrophysics Data System (ADS)

Maçzewski, ł.; Adamus, M.; Ciborowski, J.; Grzelak, G.; łużniak, P.; Nieżurawski, P.; Żarnecki, A. F.

2009-11-01

Beamstrahlung will constitute an important source of background in a pixel vertex detector at the future International Linear Collider. Electron and positron tracks of this origin impact the pixel planes at angles generally larger than those of secondary hadrons and the corresponding clusters are elongated. We report studies of cluster characteristics using test beam electron tracks incident at various angles on a MIMOSA-5 monolithic active pixel sensor matrix.

Color filter array pattern identification using variance of color difference image

NASA Astrophysics Data System (ADS)

Shin, Hyun Jun; Jeon, Jong Ju; Eom, Il Kyu

2017-07-01

A color filter array is placed on the image sensor of a digital camera to acquire color images. Each pixel uses only one color, since the image sensor can measure only one color per pixel. Therefore, empty pixels are filled using an interpolation process called demosaicing. The original and the interpolated pixels have different statistical characteristics. If the image is modified by manipulation or forgery, the color filter array pattern is altered. This pattern change can be a clue for image forgery detection. However, most forgery detection algorithms have the disadvantage of assuming the color filter array pattern. We present an identification method of the color filter array pattern. Initially, the local mean is eliminated to remove the background effect. Subsequently, the color difference block is constructed to emphasize the difference between the original pixel and the interpolated pixel. The variance measure of the color difference image is proposed as a means of estimating the color filter array configuration. The experimental results show that the proposed method is effective in identifying the color filter array pattern. Compared with conventional methods, our method provides superior performance.

Pixel electronic noise as a function of position in an active matrix flat panel imaging array

NASA Astrophysics Data System (ADS)

Yazdandoost, Mohammad Y.; Wu, Dali; Karim, Karim S.

2010-04-01

We present an analysis of output referred pixel electronic noise as a function of position in the active matrix array for both active and passive pixel architectures. Three different noise sources for Active Pixel Sensor (APS) arrays are considered: readout period noise, reset period noise and leakage current noise of the reset TFT during readout. For the state-of-the-art Passive Pixel Sensor (PPS) array, the readout noise of the TFT switch is considered. Measured noise results are obtained by modeling the array connections with RC ladders on a small in-house fabricated prototype. The results indicate that the pixels in the rows located in the middle part of the array have less random electronic noise at the output of the off-panel charge amplifier compared to the ones in rows at the two edges of the array. These results can help optimize for clearer images as well as help define the region-of-interest with the best signal-to-noise ratio in an active matrix digital flat panel imaging array.

General fusion approaches for the age determination of latent fingerprint traces: results for 2D and 3D binary pixel feature fusion

NASA Astrophysics Data System (ADS)

Merkel, Ronny; Gruhn, Stefan; Dittmann, Jana; Vielhauer, Claus; Bräutigam, Anja

2012-03-01

Determining the age of latent fingerprint traces found at crime scenes is an unresolved research issue since decades. Solving this issue could provide criminal investigators with the specific time a fingerprint trace was left on a surface, and therefore would enable them to link potential suspects to the time a crime took place as well as to reconstruct the sequence of events or eliminate irrelevant fingerprints to ensure privacy constraints. Transferring imaging techniques from different application areas, such as 3D image acquisition, surface measurement and chemical analysis to the domain of lifting latent biometric fingerprint traces is an upcoming trend in forensics. Such non-destructive sensor devices might help to solve the challenge of determining the age of a latent fingerprint trace, since it provides the opportunity to create time series and process them using pattern recognition techniques and statistical methods on digitized 2D, 3D and chemical data, rather than classical, contact-based capturing techniques, which alter the fingerprint trace and therefore make continuous scans impossible. In prior work, we have suggested to use a feature called binary pixel, which is a novel approach in the working field of fingerprint age determination. The feature uses a Chromatic White Light (CWL) image sensor to continuously scan a fingerprint trace over time and retrieves a characteristic logarithmic aging tendency for 2D-intensity as well as 3D-topographic images from the sensor. In this paper, we propose to combine such two characteristic aging features with other 2D and 3D features from the domains of surface measurement, microscopy, photography and spectroscopy, to achieve an increase in accuracy and reliability of a potential future age determination scheme. Discussing the feasibility of such variety of sensor devices and possible aging features, we propose a general fusion approach, which might combine promising features to a joint age determination scheme in future. We furthermore demonstrate the feasibility of the introduced approach by exemplary fusing the binary pixel features based on 2D-intensity and 3D-topographic images of the mentioned CWL sensor. We conclude that a formula based age determination approach requires very precise image data, which cannot be achieved at the moment, whereas a machine learning based classification approach seems to be feasible, if an adequate amount of features can be provided.

Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

PubMed

Elbakri, I A; McIntosh, B J; Rickey, D W

2009-03-21

We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result.

Integrated sensor with frame memory and programmable resolution for light adaptive imaging

NASA Technical Reports Server (NTRS)

Zhou, Zhimin (Inventor); Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

2004-01-01

An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

Improved Denoising via Poisson Mixture Modeling of Image Sensor Noise.

PubMed

Zhang, Jiachao; Hirakawa, Keigo

2017-04-01

This paper describes a study aimed at comparing the real image sensor noise distribution to the models of noise often assumed in image denoising designs. A quantile analysis in pixel, wavelet transform, and variance stabilization domains reveal that the tails of Poisson, signal-dependent Gaussian, and Poisson-Gaussian models are too short to capture real sensor noise behavior. A new Poisson mixture noise model is proposed to correct the mismatch of tail behavior. Based on the fact that noise model mismatch results in image denoising that undersmoothes real sensor data, we propose a mixture of Poisson denoising method to remove the denoising artifacts without affecting image details, such as edge and textures. Experiments with real sensor data verify that denoising for real image sensor data is indeed improved by this new technique.

Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

PubMed

Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

2015-03-01

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

Compressive hyperspectral sensor for LWIR gas detection

NASA Astrophysics Data System (ADS)

Russell, Thomas A.; McMackin, Lenore; Bridge, Bob; Baraniuk, Richard

2012-06-01

Focal plane arrays with associated electronics and cooling are a substantial portion of the cost, complexity, size, weight, and power requirements of Long-Wave IR (LWIR) imagers. Hyperspectral LWIR imagers add significant data volume burden as they collect a high-resolution spectrum at each pixel. We report here on a LWIR Hyperspectral Sensor that applies Compressive Sensing (CS) in order to achieve benefits in these areas. The sensor applies single-pixel detection technology demonstrated by Rice University. The single-pixel approach uses a Digital Micro-mirror Device (DMD) to reflect and multiplex the light from a random assortment of pixels onto the detector. This is repeated for a number of measurements much less than the total number of scene pixels. We have extended this architecture to hyperspectral LWIR sensing by inserting a Fabry-Perot spectrometer in the optical path. This compressive hyperspectral imager collects all three dimensions on a single detection element, greatly reducing the size, weight and power requirements of the system relative to traditional approaches, while also reducing data volume. The CS architecture also supports innovative adaptive approaches to sensing, as the DMD device allows control over the selection of spatial scene pixels to be multiplexed on the detector. We are applying this advantage to the detection of plume gases, by adaptively locating and concentrating target energy. A key challenge in this system is the diffraction loss produce by the DMD in the LWIR. We report the results of testing DMD operation in the LWIR, as well as system spatial and spectral performance.

Computation of dark frames in digital imagers

NASA Astrophysics Data System (ADS)

Widenhorn, Ralf; Rest, Armin; Blouke, Morley M.; Berry, Richard L.; Bodegom, Erik

2007-02-01

Dark current is caused by electrons that are thermally exited into the conduction band. These electrons are collected by the well of the CCD and add a false signal to the chip. We will present an algorithm that automatically corrects for dark current. It uses a calibration protocol to characterize the image sensor for different temperatures. For a given exposure time, the dark current of every pixel is characteristic of a specific temperature. The dark current of every pixel can therefore be used as an indicator of the temperature. Hot pixels have the highest signal-to-noise ratio and are the best temperature sensors. We use the dark current of a several hundred hot pixels to sense the chip temperature and predict the dark current of all pixels on the chip. Dark current computation is not a new concept, but our approach is unique. Some advantages of our method include applicability for poorly temperature-controlled camera systems and the possibility of ex post facto dark current correction.

Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

PubMed Central

Ballin, Jamie Alexander; Crooks, Jamie Phillip; Dauncey, Paul Dominic; Magnan, Anne-Marie; Mikami, Yoshinari; Miller, Owen Daniel; Noy, Matthew; Rajovic, Vladimir; Stanitzki, Marcel; Stefanov, Konstantin; Turchetta, Renato; Tyndel, Mike; Villani, Enrico Giulio; Watson, Nigel Keith; Wilson, John Allan

2008-01-01

In this paper we present a novel, quadruple well process developed in a modern 0.18 μm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency. PMID:27873817

Design and standalone characterisation of a capacitively coupled HV-CMOS sensor chip for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Kremastiotis, I.; Ballabriga, R.; Campbell, M.; Dannheim, D.; Fiergolski, A.; Hynds, D.; Kulis, S.; Peric, I.

2017-09-01

The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial 180 nm HV-CMOS process and contains a matrix of 128×128 square pixels with 25μm pitch. First prototypes have been produced with a standard resistivity of ~20 Ωcm for the substrate and tested in standalone mode. The results show a rise time of ~20 ns, charge gain of 190 mV/ke- and ~40 e- RMS noise for a power consumption of 4.8μW/pixel. The main design aspects, as well as standalone measurement results, are presented.

Single-event transient imaging with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor.

PubMed

Mochizuki, Futa; Kagawa, Keiichiro; Okihara, Shin-ichiro; Seo, Min-Woong; Zhang, Bo; Takasawa, Taishi; Yasutomi, Keita; Kawahito, Shoji

2016-02-22

In the work described in this paper, an image reproduction scheme with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor was demonstrated. The sensor captures an object by compressing a sequence of images with focal-plane temporally random-coded shutters, followed by reconstruction of time-resolved images. Because signals are modulated pixel-by-pixel during capturing, the maximum frame rate is defined only by the charge transfer speed and can thus be higher than those of conventional ultra-high-speed cameras. The frame rate and optical efficiency of the multi-aperture scheme are discussed. To demonstrate the proposed imaging method, a 5×3 multi-aperture image sensor was fabricated. The average rising and falling times of the shutters were 1.53 ns and 1.69 ns, respectively. The maximum skew among the shutters was 3 ns. The sensor observed plasma emission by compressing it to 15 frames, and a series of 32 images at 200 Mfps was reconstructed. In the experiment, by correcting disparities and considering temporal pixel responses, artifacts in the reconstructed images were reduced. An improvement in PSNR from 25.8 dB to 30.8 dB was confirmed in simulations.

Status of HVCMOS developments for ATLAS

NASA Astrophysics Data System (ADS)

Perić, I.; Blanco, R.; Casanova Mohr, R.; Ehrler, F.; Guezzi Messaoud, F.; Krämer, C.; Leys, R.; Prathapan, M.; Schimassek, R.; Schöning, A.; Vilella Figueras, E.; Weber, A.; Zhang, H.

2017-02-01

This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processes AMS H18, AMS H35 and LFoundry LFA15. Efficiency of 99.7% after neutron irradiation to 1015 neq/cm2W has been measured with the small area CCPD prototype in AMS H18 technology. About 84% of the particles are detected with a time resolution better than 25 ns. The sensor was implemented on a low resistivity substrate. The large area demonstrator sensor in AMS H35 process has been designed, produced and successfully tested. The sensor has been produced on different high resistivity substrates ranging from 80 Ωcm to more than 1 kΩ. Monolithic- and hybrid readout are both possible. In August 2016, six different monolithic pixel matrices for ATLAS with a total area of 1 cm2 have been submitted in LFoundry LFA15 process. The matrices implement column drain and triggered readout as well as waveform sampling capability on pixel level. Design details will be presented.

Multiocular image sensor with on-chip beam-splitter and inner meta-micro-lens for single-main-lens stereo camera.

PubMed

Koyama, Shinzo; Onozawa, Kazutoshi; Tanaka, Keisuke; Saito, Shigeru; Kourkouss, Sahim Mohamed; Kato, Yoshihisa

2016-08-08

We developed multiocular 1/3-inch 2.75-μm-pixel-size 2.1M- pixel image sensors by co-design of both on-chip beam-splitter and 100-nm-width 800-nm-depth patterned inner meta-micro-lens for single-main-lens stereo camera systems. A camera with the multiocular image sensor can capture horizontally one-dimensional light filed by both the on-chip beam-splitter horizontally dividing ray according to incident angle, and the inner meta-micro-lens collecting the divided ray into pixel with small optical loss. Cross-talks between adjacent light field images of a fabricated binocular image sensor and of a quad-ocular image sensor are as low as 6% and 7% respectively. With the selection of two images from one-dimensional light filed images, a selective baseline for stereo vision is realized to view close objects with single-main-lens. In addition, by adding multiple light field images with different ratios, baseline distance can be tuned within an aperture of a main lens. We suggest the electrically selective or tunable baseline stereo vision to reduce 3D fatigue of viewers.

Plenoptic camera image simulation for reconstruction algorithm verification

NASA Astrophysics Data System (ADS)

Schwiegerling, Jim

2014-09-01

Plenoptic cameras have emerged in recent years as a technology for capturing light field data in a single snapshot. A conventional digital camera can be modified with the addition of a lenslet array to create a plenoptic camera. Two distinct camera forms have been proposed in the literature. The first has the camera image focused onto the lenslet array. The lenslet array is placed over the camera sensor such that each lenslet forms an image of the exit pupil onto the sensor. The second plenoptic form has the lenslet array relaying the image formed by the camera lens to the sensor. We have developed a raytracing package that can simulate images formed by a generalized version of the plenoptic camera. Several rays from each sensor pixel are traced backwards through the system to define a cone of rays emanating from the entrance pupil of the camera lens. Objects that lie within this cone are integrated to lead to a color and exposure level for that pixel. To speed processing three-dimensional objects are approximated as a series of planes at different depths. Repeating this process for each pixel in the sensor leads to a simulated plenoptic image on which different reconstruction algorithms can be tested.

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, G.; Fried, J.; Rehak, P.

We present an application-specific integrated circuit (ASIC) for high-resolution x-ray spectrometers (XRS). The ASIC reads out signals from pixelated silicon drift detectors (SDDs). The pixel does not have an integrated field effect transistor (FET); rather, readout is accomplished by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW, and offers 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, a novel pile-up rejector, and peak detection with an analog memory. The readout is sparse and based on custom low-power tristatable low-voltage differential signaling (LPT-LVDS). A unit of 64 SDD pixels, read outmore » by four ASICs, covers an area of 12.8 cm{sup 2} and dissipates with the sensor biased about 15 mW/cm{sup 2}. As a tile-based system, the 64-pixel units cover a large detection area. Our preliminary measurements at -44 C show a FWHM of 145 eV at the 5.9 keV peak of a {sup 55}Fe source, and less than 80 eV on a test-pulse line at 200 eV.« less

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor.

PubMed

Griffiths, J A; Chen, D; Turchetta, R; Royle, G J

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 10(3) to 1.6 at a gain of 3.93 × 10(1). The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 10(3), dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

First evidence of phase-contrast imaging with laboratory sources and active pixel sensors

NASA Astrophysics Data System (ADS)

Olivo, A.; Arvanitis, C. D.; Bohndiek, S. E.; Clark, A. T.; Prydderch, M.; Turchetta, R.; Speller, R. D.

2007-11-01

The aim of the present work is to achieve a first step towards combining the advantages of an innovative X-ray imaging technique—phase-contrast imaging (XPCi)—with those of a new class of sensors, i.e. CMOS-based active pixel sensors (APSs). The advantages of XPCi are well known and include increased image quality and detection of details invisible to conventional techniques, with potential application fields encompassing the medical, biological, industrial and security areas. Vanilla, one of the APSs developed by the MI-3 collaboration (see http://mi3.shef.ac.uk), was thoroughly characterised and an appropriate scintillator was selected to provide X-ray sensitivity. During this process, a set of phase-contrast images of different biological samples was acquired by means of the well-established free-space propagation XPCi technique. The obtained results are very encouraging and are in optimum agreement with the predictions of a simulation recently developed by some of the authors thus further supporting its reliability. This paper presents these preliminary results in detail and discusses in brief both the background to this work and its future developments.

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

NASA Astrophysics Data System (ADS)

Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Real-time object tracking based on scale-invariant features employing bio-inspired hardware.

PubMed

Yasukawa, Shinsuke; Okuno, Hirotsugu; Ishii, Kazuo; Yagi, Tetsuya

2016-09-01

We developed a vision sensor system that performs a scale-invariant feature transform (SIFT) in real time. To apply the SIFT algorithm efficiently, we focus on a two-fold process performed by the visual system: whole-image parallel filtering and frequency-band parallel processing. The vision sensor system comprises an active pixel sensor, a metal-oxide semiconductor (MOS)-based resistive network, a field-programmable gate array (FPGA), and a digital computer. We employed the MOS-based resistive network for instantaneous spatial filtering and a configurable filter size. The FPGA is used to pipeline process the frequency-band signals. The proposed system was evaluated by tracking the feature points detected on an object in a video. Copyright © 2016 Elsevier Ltd. All rights reserved.

High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection

NASA Technical Reports Server (NTRS)

Ohara, Tetsuo

2012-01-01

A sub-aperture stitching optical interferometer can provide a cost-effective solution for an in situ metrology tool for large optics; however, the currently available technologies are not suitable for high-speed and real-time continuous scan. NanoWave s SPPE (Scanning Probe Position Encoder) has been proven to exhibit excellent stability and sub-nanometer precision with a large dynamic range. This same technology can transform many optical interferometers into real-time subnanometer precision tools with only minor modification. The proposed field-programmable gate array (FPGA) signal processing concept, coupled with a new-generation, high-speed, mega-pixel CMOS (complementary metal-oxide semiconductor) image sensor, enables high speed (>1 m/s) and real-time continuous surface profiling that is insensitive to variation of pixel sensitivity and/or optical transmission/reflection. This is especially useful for large optics surface profiling.

CMOS imager for pointing and tracking applications

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

2006-01-01

Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

Performance quantification of a millimeter-wavelength imaging system based on inexpensive glow-discharge-detector focal-plane array.

PubMed

Shilemay, Moshe; Rozban, Daniel; Levanon, Assaf; Yitzhaky, Yitzhak; Kopeika, Natan S; Yadid-Pecht, Orly; Abramovich, Amir

2013-03-01

Inexpensive millimeter-wavelength (MMW) optical digital imaging raises a challenge of evaluating the imaging performance and image quality because of the large electromagnetic wavelengths and pixel sensor sizes, which are 2 to 3 orders of magnitude larger than those of ordinary thermal or visual imaging systems, and also because of the noisiness of the inexpensive glow discharge detectors that compose the focal-plane array. This study quantifies the performances of this MMW imaging system. Its point-spread function and modulation transfer function were investigated. The experimental results and the analysis indicate that the image quality of this MMW imaging system is limited mostly by the noise, and the blur is dominated by the pixel sensor size. Therefore, the MMW image might be improved by oversampling, given that noise reduction is achieved. Demonstration of MMW image improvement through oversampling is presented.

A Combined Laser-Communication and Imager for Microspacecraft (ACLAIM)

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J.

1998-01-01

ACLAIM is a multi-function instrument consisting of a laser communication terminal and an imaging camera that share a common telescope. A single APS- (Active Pixel Sensor) based focal-plane-array is used to perform both the acquisition and tracking (for laser communication) and science imaging functions.

SPAD array based TOF SoC design for unmanned vehicle

NASA Astrophysics Data System (ADS)

Pan, An; Xu, Yuan; Xie, Gang; Huang, Zhiyu; Zheng, Yanghao; Shi, Weiwei

2018-03-01

As for the requirement of unmanned-vehicle mobile Lidar system, this paper presents a SoC design based on pulsed TOF depth image sensor. This SoC has a detection range of 300m and detecting resolution of 1.5cm. Pixels are made of SPAD. Meanwhile, SoC adopts a structure of multi-pixel sharing TDC, which significantly reduces chip area and improve the fill factor of light-sensing surface area. SoC integrates a TCSPC module to achieve the functionality of receiving each photon, measuring photon flight time and processing depth information in one chip. The SOC is designed in the SMIC 0.13μm CIS CMOS technology

Fusion: ultra-high-speed and IR image sensors

NASA Astrophysics Data System (ADS)

Etoh, T. Goji; Dao, V. T. S.; Nguyen, Quang A.; Kimata, M.

2015-08-01

Most targets of ultra-high-speed video cameras operating at more than 1 Mfps, such as combustion, crack propagation, collision, plasma, spark discharge, an air bag at a car accident and a tire under a sudden brake, generate sudden heat. Researchers in these fields require tools to measure the high-speed motion and heat simultaneously. Ultra-high frame rate imaging is achieved by an in-situ storage image sensor. Each pixel of the sensor is equipped with multiple memory elements to record a series of image signals simultaneously at all pixels. Image signals stored in each pixel are read out after an image capturing operation. In 2002, we developed an in-situ storage image sensor operating at 1 Mfps 1). However, the fill factor of the sensor was only 15% due to a light shield covering the wide in-situ storage area. Therefore, in 2011, we developed a backside illuminated (BSI) in-situ storage image sensor to increase the sensitivity with 100% fill factor and a very high quantum efficiency 2). The sensor also achieved a much higher frame rate,16.7 Mfps, thanks to the wiring on the front side with more freedom 3). The BSI structure has another advantage that it has less difficulties in attaching an additional layer on the backside, such as scintillators. This paper proposes development of an ultra-high-speed IR image sensor in combination of advanced nano-technologies for IR imaging and the in-situ storage technology for ultra-highspeed imaging with discussion on issues in the integration.

Quantitative evaluation of the accuracy and variance of individual pixels in a scientific CMOS (sCMOS) camera for computational imaging

NASA Astrophysics Data System (ADS)

Watanabe, Shigeo; Takahashi, Teruo; Bennett, Keith

2017-02-01

The"scientific" CMOS (sCMOS) camera architecture fundamentally differs from CCD and EMCCD cameras. In digital CCD and EMCCD cameras, conversion from charge to the digital output is generally through a single electronic chain, and the read noise and the conversion factor from photoelectrons to digital outputs are highly uniform for all pixels, although quantum efficiency may spatially vary. In CMOS cameras, the charge to voltage conversion is separate for each pixel and each column has independent amplifiers and analog-to-digital converters, in addition to possible pixel-to-pixel variation in quantum efficiency. The "raw" output from the CMOS image sensor includes pixel-to-pixel variability in the read noise, electronic gain, offset and dark current. Scientific camera manufacturers digitally compensate the raw signal from the CMOS image sensors to provide usable images. Statistical noise in images, unless properly modeled, can introduce errors in methods such as fluctuation correlation spectroscopy or computational imaging, for example, localization microscopy using maximum likelihood estimation. We measured the distributions and spatial maps of individual pixel offset, dark current, read noise, linearity, photoresponse non-uniformity and variance distributions of individual pixels for standard, off-the-shelf Hamamatsu ORCA-Flash4.0 V3 sCMOS cameras using highly uniform and controlled illumination conditions, from dark conditions to multiple low light levels between 20 to 1,000 photons / pixel per frame to higher light conditions. We further show that using pixel variance for flat field correction leads to errors in cameras with good factory calibration.

Visible Wavelength Color Filters Using Dielectric Subwavelength Gratings for Backside-Illuminated CMOS Image Sensor Technologies.

PubMed

Horie, Yu; Han, Seunghoon; Lee, Jeong-Yub; Kim, Jaekwan; Kim, Yongsung; Arbabi, Amir; Shin, Changgyun; Shi, Lilong; Arbabi, Ehsan; Kamali, Seyedeh Mahsa; Lee, Hong-Seok; Hwang, Sungwoo; Faraon, Andrei

2017-05-10

We report transmissive color filters based on subwavelength dielectric gratings that can replace conventional dye-based color filters used in backside-illuminated CMOS image sensor (BSI CIS) technologies. The filters are patterned in an 80 nm-thick poly silicon film on a 115 nm-thick SiO 2 spacer layer. They are optimized for operating at the primary RGB colors, exhibit peak transmittance of 60-80%, and have an almost insensitive response over a ± 20° angular range. This technology enables shrinking of the pixel sizes down to near a micrometer.

ALICE inner tracking system readout electronics prototype testing with the CERN "Giga Bit Transceiver''

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Rossewij, M. J.; Sielewicz, K. M.

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. Furthermore, this contribution describes laboratory and radiation testing results with this prototype board set.

ALICE inner tracking system readout electronics prototype testing with the CERN "Giga Bit Transceiver''

DOE PAGES

Schambach, Joachim; Rossewij, M. J.; Sielewicz, K. M.; ...

2016-12-28

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. Furthermore, this contribution describes laboratory and radiation testing results with this prototype board set.

ALICE inner tracking system readout electronics prototype testing with the CERN ``Giga Bit Transceiver''

NASA Astrophysics Data System (ADS)

Schambach, J.; Rossewij, M. J.; Sielewicz, K. M.; Aglieri Rinella, G.; Bonora, M.; Ferencei, J.; Giubilato, P.; Vanat, T.

2016-12-01

The ALICE Collaboration is preparing a major detector upgrade for the LHC Run 3, which includes the construction of a new silicon pixel based Inner Tracking System (ITS). The ITS readout system consists of 192 readout boards to control the sensors and their power system, receive triggers, and deliver sensor data to the DAQ. To prototype various aspects of this readout system, an FPGA based carrier board and an associated FMC daughter card containing the CERN Gigabit Transceiver (GBT) chipset have been developed. This contribution describes laboratory and radiation testing results with this prototype board set.

Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware.

PubMed

Kumar, Saurabh; Amrutur, Bharadwaj; Asokan, Sundarrajan

2018-02-01

Fiber Bragg Grating (FBG) sensors have become popular for applications related to structural health monitoring, biomedical engineering, and robotics. However, for successful large scale adoption, FBG interrogation systems are as important as sensor characteristics. Apart from accuracy, the required number of FBG sensors per fiber and the distance between the device in which the sensors are used and the interrogation system also influence the selection of the interrogation technique. For several measurement devices developed for applications in biomedical engineering and robotics, only a few sensors per fiber are required and the device is close to the interrogation system. For these applications, interrogation systems based on InGaAs linear detector arrays provide a good choice. However, their resolution is dependent on the algorithms used for curve fitting. In this work, a detailed analysis of the choice of algorithm using the Gaussian approximation for the FBG spectrum and the number of pixels used for curve fitting on the errors is provided. The points where the maximum errors occur have been identified. All comparisons for wavelength shift detection have been made against another interrogation system based on the tunable swept laser. It has been shown that maximum errors occur when the wavelength shift is such that one new pixel is included for curve fitting. It has also been shown that an algorithm with lower computation cost compared to the more popular methods using iterative non-linear least squares estimation can be used without leading to the loss of accuracy. The algorithm has been implemented on embedded hardware, and a speed-up of approximately six times has been observed.

Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware

NASA Astrophysics Data System (ADS)

Kumar, Saurabh; Amrutur, Bharadwaj; Asokan, Sundarrajan

2018-02-01

Fiber Bragg Grating (FBG) sensors have become popular for applications related to structural health monitoring, biomedical engineering, and robotics. However, for successful large scale adoption, FBG interrogation systems are as important as sensor characteristics. Apart from accuracy, the required number of FBG sensors per fiber and the distance between the device in which the sensors are used and the interrogation system also influence the selection of the interrogation technique. For several measurement devices developed for applications in biomedical engineering and robotics, only a few sensors per fiber are required and the device is close to the interrogation system. For these applications, interrogation systems based on InGaAs linear detector arrays provide a good choice. However, their resolution is dependent on the algorithms used for curve fitting. In this work, a detailed analysis of the choice of algorithm using the Gaussian approximation for the FBG spectrum and the number of pixels used for curve fitting on the errors is provided. The points where the maximum errors occur have been identified. All comparisons for wavelength shift detection have been made against another interrogation system based on the tunable swept laser. It has been shown that maximum errors occur when the wavelength shift is such that one new pixel is included for curve fitting. It has also been shown that an algorithm with lower computation cost compared to the more popular methods using iterative non-linear least squares estimation can be used without leading to the loss of accuracy. The algorithm has been implemented on embedded hardware, and a speed-up of approximately six times has been observed.

Bio-inspired multi-mode optic flow sensors for micro air vehicles

NASA Astrophysics Data System (ADS)

Park, Seokjun; Choi, Jaehyuk; Cho, Jihyun; Yoon, Euisik

2013-06-01

Monitoring wide-field surrounding information is essential for vision-based autonomous navigation in micro-air-vehicles (MAV). Our image-cube (iCube) module, which consists of multiple sensors that are facing different angles in 3-D space, can be applied to the wide-field of view optic flows estimation (μ-Compound eyes) and to attitude control (μ- Ocelli) in the Micro Autonomous Systems and Technology (MAST) platforms. In this paper, we report an analog/digital (A/D) mixed-mode optic-flow sensor, which generates both optic flows and normal images in different modes for μ- Compound eyes and μ-Ocelli applications. The sensor employs a time-stamp based optic flow algorithm which is modified from the conventional EMD (Elementary Motion Detector) algorithm to give an optimum partitioning of hardware blocks in analog and digital domains as well as adequate allocation of pixel-level, column-parallel, and chip-level signal processing. Temporal filtering, which may require huge hardware resources if implemented in digital domain, is remained in a pixel-level analog processing unit. The rest of the blocks, including feature detection and timestamp latching, are implemented using digital circuits in a column-parallel processing unit. Finally, time-stamp information is decoded into velocity from look-up tables, multiplications, and simple subtraction circuits in a chip-level processing unit, thus significantly reducing core digital processing power consumption. In the normal image mode, the sensor generates 8-b digital images using single slope ADCs in the column unit. In the optic flow mode, the sensor estimates 8-b 1-D optic flows from the integrated mixed-mode algorithm core and 2-D optic flows with an external timestamp processing, respectively.

A Fixed-Pattern Noise Correction Method Based on Gray Value Compensation for TDI CMOS Image Sensor.

PubMed

Liu, Zhenwang; Xu, Jiangtao; Wang, Xinlei; Nie, Kaiming; Jin, Weimin

2015-09-16

In order to eliminate the fixed-pattern noise (FPN) in the output image of time-delay-integration CMOS image sensor (TDI-CIS), a FPN correction method based on gray value compensation is proposed. One hundred images are first captured under uniform illumination. Then, row FPN (RFPN) and column FPN (CFPN) are estimated based on the row-mean vector and column-mean vector of all collected images, respectively. Finally, RFPN are corrected by adding the estimated RFPN gray value to the original gray values of pixels in the corresponding row, and CFPN are corrected by subtracting the estimated CFPN gray value from the original gray values of pixels in the corresponding column. Experimental results based on a 128-stage TDI-CIS show that, after correcting the FPN in the image captured under uniform illumination with the proposed method, the standard-deviation of row-mean vector decreases from 5.6798 to 0.4214 LSB, and the standard-deviation of column-mean vector decreases from 15.2080 to 13.4623 LSB. Both kinds of FPN in the real images captured by TDI-CIS are eliminated effectively with the proposed method.

Image sensor with high dynamic range linear output

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Fossum, Eric R. (Inventor)

2007-01-01

Designs and operational methods to increase the dynamic range of image sensors and APS devices in particular by achieving more than one integration times for each pixel thereof. An APS system with more than one column-parallel signal chains for readout are described for maintaining a high frame rate in readout. Each active pixel is sampled for multiple times during a single frame readout, thus resulting in multiple integration times. The operation methods can also be used to obtain multiple integration times for each pixel with an APS design having a single column-parallel signal chain for readout. Furthermore, analog-to-digital conversion of high speed and high resolution can be implemented.

Bonding techniques for hybrid active pixel sensors (HAPS)

NASA Astrophysics Data System (ADS)

Bigas, M.; Cabruja, E.; Lozano, M.

2007-05-01

A hybrid active pixel sensor (HAPS) consists of an array of sensing elements which is connected to an electronic read-out unit. The most used way to connect these two different devices is bump bonding. This interconnection technique is very suitable for these systems because it allows a very fine pitch and a high number of I/Os. However, there are other interconnection techniques available such as direct bonding. This paper, as a continuation of a review [M. Lozano, E. Cabruja, A. Collado, J. Santander, M. Ullan, Nucl. Instr. and Meth. A 473 (1-2) (2001) 95-101] published in 2001, presents an update of the different advanced bonding techniques available for manufacturing a hybrid active pixel detector.

New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

NASA Astrophysics Data System (ADS)

Weisfield, Richard L.; Hartney, Mark A.; Street, Robert A.; Apte, Raj B.

1998-07-01

This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer X 127 micrometer with an approximately page-size imaging area of 244 mm X 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm X 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance, readout amplifier design, optimized timing, and noise cancellation techniques, we achieve 1,000e to 2,000e of noise for the page size and large size arrays, respectively. This allows for true 12-bit performance and quantum limited images over a wide range of x-ray exposures. Various approaches to reducing line correlated noise have been implemented and will be discussed. Images documenting the improved performance will be presented. Avenues for improvement are under development, including higher resolution 97 micrometer pixel imagers, further improvements in detective quantum efficiency, and characterization of dynamic behavior.

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Wang, T.; Barbero, M.; Berdalovic, I.; Bespin, C.; Bhat, S.; Breugnon, P.; Caicedo, I.; Cardella, R.; Chen, Z.; Degerli, Y.; Egidos, N.; Godiot, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Krüger, H.; Kugathasan, T.; Hügging, F.; Marin Tobon, C. A.; Moustakas, K.; Pangaud, P.; Schwemling, P.; Pernegger, H.; Pohl, D.-L.; Rozanov, A.; Rymaszewski, P.; Snoeys, W.; Wermes, N.

2018-03-01

Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. DMAPS integrating fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-Monopix and TJ-Monopix, are presented. LF-Monopix was fabricated in the LFoundry 150 nm CMOS technology, and TJ-Monopix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The paper makes a joint description of the two prototypes, so that their technical differences and challenges can be addressed in direct comparison. First measurement results for LF-Monopix will also be shown, demonstrating for the first time a fully functional fast readout DMAPS prototype implemented in the LFoundry technology.

A Multi-Resolution Mode CMOS Image Sensor with a Novel Two-Step Single-Slope ADC for Intelligent Surveillance Systems.

PubMed

Kim, Daehyeok; Song, Minkyu; Choe, Byeongseong; Kim, Soo Youn

2017-06-25

In this paper, we present a multi-resolution mode CMOS image sensor (CIS) for intelligent surveillance system (ISS) applications. A low column fixed-pattern noise (CFPN) comparator is proposed in 8-bit two-step single-slope analog-to-digital converter (TSSS ADC) for the CIS that supports normal, 1/2, 1/4, 1/8, 1/16, 1/32, and 1/64 mode of pixel resolution. We show that the scaled-resolution images enable CIS to reduce total power consumption while images hold steady without events. A prototype sensor of 176 × 144 pixels has been fabricated with a 0.18 μm 1-poly 4-metal CMOS process. The area of 4-shared 4T-active pixel sensor (APS) is 4.4 μm × 4.4 μm and the total chip size is 2.35 mm × 2.35 mm. The maximum power consumption is 10 mW (with full resolution) with supply voltages of 3.3 V (analog) and 1.8 V (digital) and 14 frame/s of frame rates.

A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance

NASA Astrophysics Data System (ADS)

Snoeys, W.; Aglieri Rinella, G.; Hillemanns, H.; Kugathasan, T.; Mager, M.; Musa, L.; Riedler, P.; Reidt, F.; Van Hoorne, J.; Fenigstein, A.; Leitner, T.

2017-11-01

For the upgrade of its Inner Tracking System, the ALICE experiment plans to install a new tracker fully constructed with monolithic active pixel sensors implemented in a standard 180 nm CMOS imaging sensor process, with a deep pwell allowing full CMOS within the pixel. Reverse substrate bias increases the tolerance to non-ionizing energy loss (NIEL) well beyond 1013 1 MeVneq /cm2, but does not allow full depletion of the sensitive layer and hence full charge collection by drift, mandatory for more extreme radiation tolerance. This paper describes a process modification to fully deplete the epitaxial layer even with a small charge collection electrode. It uses a low dose blanket deep high energy n-type implant in the pixel array and does not require significant circuit or layout changes so that the same design can be fabricated both in the standard and modified process. When exposed to a 55 Fe source at a reverse substrate bias of -6 V, pixels implemented in the standard and the modified process in a low and high dose variant for the deep n-type implant respectively yield a signal of about 115 mV, 110 mV and 90 mV at the output of a follower circuit. Signal rise times heavily affected by the speed of this circuit are 27 . 8 + / - 5 ns, 23 . 2 + / - 4 . 2 ns, and 22 . 2 + / - 3 . 7 ns rms, respectively. In a different setup, the single pixel signal from a 90 Sr source only degrades by less than 20% for the modified process after a 1015 1 MeVneq /cm2 irradiation, while the signal rise time only degrades by about 16 + / - 2 ns to 19 + / - 2 . 8 ns rms. From sensors implemented in the standard process no useful signal could be extracted after the same exposure. These first results indicate the process modification maintains low sensor capacitance, improves timing performance and increases NIEL tolerance by at least an order of magnitude.

UTOFIA: an underwater time-of-flight image acquisition system

NASA Astrophysics Data System (ADS)

Driewer, Adrian; Abrosimov, Igor; Alexander, Jonathan; Benger, Marc; O'Farrell, Marion; Haugholt, Karl Henrik; Softley, Chris; Thielemann, Jens T.; Thorstensen, Jostein; Yates, Chris

2017-10-01

In this article the development of a newly designed Time-of-Flight (ToF) image sensor for underwater applications is described. The sensor is developed as part of the project UTOFIA (underwater time-of-flight image acquisition) funded by the EU within the Horizon 2020 framework. This project aims to develop a camera based on range gating that extends the visible range compared to conventional cameras by a factor of 2 to 3 and delivers real-time range information by means of a 3D video stream. The principle of underwater range gating as well as the concept of the image sensor are presented. Based on measurements on a test image sensor a pixel structure that suits best to the requirements has been selected. Within an extensive characterization underwater the capability of distance measurements in turbid environments is demonstrated.

Mk x Nk gated CMOS imager

NASA Astrophysics Data System (ADS)

Janesick, James; Elliott, Tom; Andrews, James; Tower, John; Bell, Perry; Teruya, Alan; Kimbrough, Joe; Bishop, Jeanne

2014-09-01

Our paper will describe a recently designed Mk x Nk x 10 um pixel CMOS gated imager intended to be first employed at the LLNL National Ignition Facility (NIF). Fabrication involves stitching MxN 1024x1024x10 um pixel blocks together into a monolithic imager (where M = 1, 2, . .10 and N = 1, 2, . . 10). The imager has been designed for either NMOS or PMOS pixel fabrication using a base 0.18 um/3.3V CMOS process. Details behind the design are discussed with emphasis on a custom global reset feature which erases the imager of unwanted charge in ~1 us during the fusion ignition process followed by an exposure to obtain useful data. Performance data generated by prototype imagers designed similar to the Mk x Nk sensor is presented.

Three-dimensional particle tracking velocimetry using dynamic vision sensors

NASA Astrophysics Data System (ADS)

Borer, D.; Delbruck, T.; Rösgen, T.

2017-12-01

A fast-flow visualization method is presented based on tracking neutrally buoyant soap bubbles with a set of neuromorphic cameras. The "dynamic vision sensors" register only the changes in brightness with very low latency, capturing fast processes at a low data rate. The data consist of a stream of asynchronous events, each encoding the corresponding pixel position, the time instant of the event and the sign of the change in logarithmic intensity. The work uses three such synchronized cameras to perform 3D particle tracking in a medium sized wind tunnel. The data analysis relies on Kalman filters to associate the asynchronous events with individual tracers and to reconstruct the three-dimensional path and velocity based on calibrated sensor information.

Modelling the angular effects on satellite retrieved LST at global scale using a land surface classification

NASA Astrophysics Data System (ADS)

Ermida, Sofia; DaCamara, Carlos C.; Trigo, Isabel F.; Pires, Ana C.; Ghent, Darren

2017-04-01

Land Surface Temperature (LST) is a key climatological variable and a diagnostic parameter of land surface conditions. Remote sensing constitutes the most effective method to observe LST over large areas and on a regular basis. Although LST estimation from remote sensing instruments operating in the Infrared (IR) is widely used and has been performed for nearly 3 decades, there is still a list of open issues. One of these is the LST dependence on viewing and illumination geometry. This effect introduces significant discrepancies among LST estimations from different sensors, overlapping in space and time, that are not related to uncertainties in the methodologies or input data used. Furthermore, these directional effects deviate LST products from an ideally defined LST, which should represent to the ensemble of directional radiometric temperature of all surface elements within the FOV. Angular effects on LST are here conveniently estimated by means of a kernel model of the surface thermal emission, which describes the angular dependence of LST as a function of viewing and illumination geometry. The model is calibrated using LST data as provided by a wide range of sensors to optimize spatial coverage, namely: 1) a LEO sensor - the Moderate Resolution Imaging Spectroradiometer (MODIS) on-board NASA's TERRA and AQUA; and 2) 3 GEO sensors - the Spinning Enhanced Visible and Infrared Imager (SEVIRI) on-board EUMETSAT's Meteosat Second Generation (MSG), the Japanese Meteorological Imager (JAMI) on-board the Japanese Meteorological Association (JMA) Multifunction Transport SATellite (MTSAT-2), and NASA's Geostationary Operational Environmental Satellites (GOES). As shown in our previous feasibility studies the sampling of illumination and view angles has a high impact on the obtained model parameters. This impact may be mitigated when the sampling size is increased by aggregating pixels with similar surface conditions. Here we propose a methodology where land surface is stratified by means of a cluster analysis using information on land cover type, fraction of vegetation cover and topography. The kernel model is then adjusted to LST data corresponding to each cluster. It is shown that the quality of the cluster based kernel model is very close to the pixel based one. Furthermore, the reduced number of parameters (limited to the number of identified clusters, instead of a pixel-by-pixel model calibration) allows improving the kernel model trough the incorporation of a seasonal component. The application of the here discussed procedure towards the harmonization of LST products from multi-sensors is on the framework of the ESA DUE GlobTemperature project.

Characterisation of a novel reverse-biased PPD CMOS image sensor

NASA Astrophysics Data System (ADS)

Stefanov, K. D.; Clarke, A. S.; Ivory, J.; Holland, A. D.

2017-11-01

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

A two-step A/D conversion and column self-calibration technique for low noise CMOS image sensors.

PubMed

Bae, Jaeyoung; Kim, Daeyun; Ham, Seokheon; Chae, Youngcheol; Song, Minkyu

2014-07-04

In this paper, a 120 frames per second (fps) low noise CMOS Image Sensor (CIS) based on a Two-Step Single Slope ADC (TS SS ADC) and column self-calibration technique is proposed. The TS SS ADC is suitable for high speed video systems because its conversion speed is much faster (by more than 10 times) than that of the Single Slope ADC (SS ADC). However, there exist some mismatching errors between the coarse block and the fine block due to the 2-step operation of the TS SS ADC. In general, this makes it difficult to implement the TS SS ADC beyond a 10-bit resolution. In order to improve such errors, a new 4-input comparator is discussed and a high resolution TS SS ADC is proposed. Further, a feedback circuit that enables column self-calibration to reduce the Fixed Pattern Noise (FPN) is also described. The proposed chip has been fabricated with 0.13 μm Samsung CIS technology and the chip satisfies the VGA resolution. The pixel is based on the 4-TR Active Pixel Sensor (APS). The high frame rate of 120 fps is achieved at the VGA resolution. The measured FPN is 0.38 LSB, and measured dynamic range is about 64.6 dB.

Automatic registration of fused lidar/digital imagery (texel images) for three-dimensional image creation

NASA Astrophysics Data System (ADS)

Budge, Scott E.; Badamikar, Neeraj S.; Xie, Xuan

2015-03-01

Several photogrammetry-based methods have been proposed that the derive three-dimensional (3-D) information from digital images from different perspectives, and lidar-based methods have been proposed that merge lidar point clouds and texture the merged point clouds with digital imagery. Image registration alone has difficulty with smooth regions with low contrast, whereas point cloud merging alone has difficulty with outliers and a lack of proper convergence in the merging process. This paper presents a method to create 3-D images that uses the unique properties of texel images (pixel-fused lidar and digital imagery) to improve the quality and robustness of fused 3-D images. The proposed method uses both image processing and point-cloud merging to combine texel images in an iterative technique. Since the digital image pixels and the lidar 3-D points are fused at the sensor level, more accurate 3-D images are generated because registration of image data automatically improves the merging of the point clouds, and vice versa. Examples illustrate the value of this method over other methods. The proposed method also includes modifications for the situation where an estimate of position and attitude of the sensor is known, when obtained from low-cost global positioning systems and inertial measurement units sensors.

Optimal design and critical analysis of a high resolution video plenoptic demonstrator

NASA Astrophysics Data System (ADS)

Drazic, Valter; Sacré, Jean-Jacques; Bertrand, Jérôme; Schubert, Arno; Blondé, Etienne

2011-03-01

A plenoptic camera is a natural multi-view acquisition device also capable of measuring distances by correlating a set of images acquired under different parallaxes. Its single lens and single sensor architecture have two downsides: limited resolution and depth sensitivity. In a very first step and in order to circumvent those shortcomings, we have investigated how the basic design parameters of a plenoptic camera optimize both the resolution of each view and also its depth measuring capability. In a second step, we built a prototype based on a very high resolution Red One® movie camera with an external plenoptic adapter and a relay lens. The prototype delivered 5 video views of 820x410. The main limitation in our prototype is view cross talk due to optical aberrations which reduce the depth accuracy performance. We have simulated some limiting optical aberrations and predicted its impact on the performances of the camera. In addition, we developed adjustment protocols based on a simple pattern and analyzing programs which investigate the view mapping and amount of parallax crosstalk on the sensor on a pixel basis. The results of these developments enabled us to adjust the lenslet array with a sub micrometer precision and to mark the pixels of the sensor where the views do not register properly.

Optimal design and critical analysis of a high-resolution video plenoptic demonstrator

NASA Astrophysics Data System (ADS)

Drazic, Valter; Sacré, Jean-Jacques; Schubert, Arno; Bertrand, Jérôme; Blondé, Etienne

2012-01-01

A plenoptic camera is a natural multiview acquisition device also capable of measuring distances by correlating a set of images acquired under different parallaxes. Its single lens and single sensor architecture have two downsides: limited resolution and limited depth sensitivity. As a first step and in order to circumvent those shortcomings, we investigated how the basic design parameters of a plenoptic camera optimize both the resolution of each view and its depth-measuring capability. In a second step, we built a prototype based on a very high resolution Red One® movie camera with an external plenoptic adapter and a relay lens. The prototype delivered five video views of 820 × 410. The main limitation in our prototype is view crosstalk due to optical aberrations that reduce the depth accuracy performance. We simulated some limiting optical aberrations and predicted their impact on the performance of the camera. In addition, we developed adjustment protocols based on a simple pattern and analysis of programs that investigated the view mapping and amount of parallax crosstalk on the sensor on a pixel basis. The results of these developments enabled us to adjust the lenslet array with a submicrometer precision and to mark the pixels of the sensor where the views do not register properly.

Real time three-dimensional space video rate sensors for millimeter waves imaging based very inexpensive plasma LED lamps

NASA Astrophysics Data System (ADS)

Levanon, Assaf; Yitzhaky, Yitzhak; Kopeika, Natan S.; Rozban, Daniel; Abramovich, Amir

2014-10-01

In recent years, much effort has been invested to develop inexpensive but sensitive Millimeter Wave (MMW) detectors that can be used in focal plane arrays (FPAs), in order to implement real time MMW imaging. Real time MMW imaging systems are required for many varied applications in many fields as homeland security, medicine, communications, military products and space technology. It is mainly because this radiation has high penetration and good navigability through dust storm, fog, heavy rain, dielectric materials, biological tissue, and diverse materials. Moreover, the atmospheric attenuation in this range of the spectrum is relatively low and the scattering is also low compared to NIR and VIS. The lack of inexpensive room temperature imaging systems makes it difficult to provide a suitable MMW system for many of the above applications. In last few years we advanced in research and development of sensors using very inexpensive (30-50 cents) Glow Discharge Detector (GDD) plasma indicator lamps as MMW detectors. This paper presents three kinds of GDD sensor based lamp Focal Plane Arrays (FPA). Those three kinds of cameras are different in the number of detectors, scanning operation, and detection method. The 1st and 2nd generations are 8 × 8 pixel array and an 18 × 2 mono-rail scanner array respectively, both of them for direct detection and limited to fixed imaging. The last designed sensor is a multiplexing frame rate of 16x16 GDD FPA. It permits real time video rate imaging of 30 frames/ sec and comprehensive 3D MMW imaging. The principle of detection in this sensor is a frequency modulated continuous wave (FMCW) system while each of the 16 GDD pixel lines is sampled simultaneously. Direct detection is also possible and can be done with a friendly user interface. This FPA sensor is built over 256 commercial GDD lamps with 3 mm diameter International Light, Inc., Peabody, MA model 527 Ne indicator lamps as pixel detectors. All three sensors are fully supported by software Graphical Unit Interface (GUI). They were tested and characterized through different kinds of optical systems for imaging applications, super resolution, and calibration methods. Capability of the 16x16 sensor is to employ a chirp radar like method to produced depth and reflectance information in the image. This enables 3-D MMW imaging in real time with video frame rate. In this work we demonstrate different kinds of optical imaging systems. Those systems have capability of 3-D imaging for short range and longer distances to at least 10-20 meters.

Solution processed integrated pixel element for an imaging device

NASA Astrophysics Data System (ADS)

Swathi, K.; Narayan, K. S.

2016-09-01

We demonstrate the implementation of a solid state circuit/structure comprising of a high performing polymer field effect transistor (PFET) utilizing an oxide layer in conjunction with a self-assembled monolayer (SAM) as the dielectric and a bulk-heterostructure based organic photodiode as a CMOS-like pixel element for an imaging sensor. Practical usage of functional organic photon detectors requires on chip components for image capture and signal transfer as in the CMOS/CCD architecture rather than simple photodiode arrays in order to increase speed and sensitivity of the sensor. The availability of high performing PFETs with low operating voltage and photodiodes with high sensitivity provides the necessary prerequisite to implement a CMOS type image sensing device structure based on organic electronic devices. Solution processing routes in organic electronics offers relatively facile procedures to integrate these components, combined with unique features of large-area, form factor and multiple optical attributes. We utilize the inherent property of a binary mixture in a blend to phase-separate vertically and create a graded junction for effective photocurrent response. The implemented design enables photocharge generation along with on chip charge to voltage conversion with performance parameters comparable to traditional counterparts. Charge integration analysis for the passive pixel element using 2D TCAD simulations is also presented to evaluate the different processes that take place in the monolithic structure.

Active pixel image sensor with a winner-take-all mode of operation

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Mead, Carver (Inventor); Fossum, Eric R. (Inventor)

2003-01-01

An integrated CMOS semiconductor imaging device having two modes of operation that can be performed simultaneously to produce an output image and provide information of a brightest or darkest pixel in the image.

Active Pixel Sensors: Are CCD's Dinosaurs?

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1993-01-01

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

NASA Technical Reports Server (NTRS)

Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl J.; Reed, Robert; Pickel, Jim; Kniffin, Scott

2002-01-01

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

PubMed Central

Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

2011-01-01

In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been recently demonstrated with excellent avalanche gains; the latter is expected to lead to a number of novel imaging device applications that would be quantum noise limited. While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. The advantages of APS based x-ray imagers are also discussed with examples. PMID:22163893

A study on rational function model generation for TerraSAR-X imagery.

PubMed

Eftekhari, Akram; Saadatseresht, Mohammad; Motagh, Mahdi

2013-09-09

The Rational Function Model (RFM) has been widely used as an alternative to rigorous sensor models of high-resolution optical imagery in photogrammetry and remote sensing geometric processing. However, not much work has been done to evaluate the applicability of the RF model for Synthetic Aperture Radar (SAR) image processing. This paper investigates how to generate a Rational Polynomial Coefficient (RPC) for high-resolution TerraSAR-X imagery using an independent approach. The experimental results demonstrate that the RFM obtained using the independent approach fits the Range-Doppler physical sensor model with an accuracy of greater than 10-3 pixel. Because independent RPCs indicate absolute errors in geolocation, two methods can be used to improve the geometric accuracy of the RFM. In the first method, Ground Control Points (GCPs) are used to update SAR sensor orientation parameters, and the RPCs are calculated using the updated parameters. Our experiment demonstrates that by using three control points in the corners of the image, an accuracy of 0.69 pixels in range and 0.88 pixels in the azimuth direction is achieved. For the second method, we tested the use of an affine model for refining RPCs. In this case, by applying four GCPs in the corners of the image, the accuracy reached 0.75 pixels in range and 0.82 pixels in the azimuth direction.

A Study on Rational Function Model Generation for TerraSAR-X Imagery

PubMed Central

Eftekhari, Akram; Saadatseresht, Mohammad; Motagh, Mahdi

2013-01-01

The Rational Function Model (RFM) has been widely used as an alternative to rigorous sensor models of high-resolution optical imagery in photogrammetry and remote sensing geometric processing. However, not much work has been done to evaluate the applicability of the RF model for Synthetic Aperture Radar (SAR) image processing. This paper investigates how to generate a Rational Polynomial Coefficient (RPC) for high-resolution TerraSAR-X imagery using an independent approach. The experimental results demonstrate that the RFM obtained using the independent approach fits the Range-Doppler physical sensor model with an accuracy of greater than 10−3 pixel. Because independent RPCs indicate absolute errors in geolocation, two methods can be used to improve the geometric accuracy of the RFM. In the first method, Ground Control Points (GCPs) are used to update SAR sensor orientation parameters, and the RPCs are calculated using the updated parameters. Our experiment demonstrates that by using three control points in the corners of the image, an accuracy of 0.69 pixels in range and 0.88 pixels in the azimuth direction is achieved. For the second method, we tested the use of an affine model for refining RPCs. In this case, by applying four GCPs in the corners of the image, the accuracy reached 0.75 pixels in range and 0.82 pixels in the azimuth direction. PMID:24021971

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

NASA Astrophysics Data System (ADS)

Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

2018-04-01

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or γ rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (μe τe) of a 500 μ m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The μe τe products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average μe τe of 1.0 ṡ 10‑4 cm2V‑1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

Adaptive pixel-to-pixel projection intensity adjustment for measuring a shiny surface using orthogonal color fringe pattern projection

NASA Astrophysics Data System (ADS)

Chen, Chao; Gao, Nan; Wang, Xiangjun; Zhang, Zonghua

2018-05-01

Three-dimensional (3D) shape measurement based on fringe pattern projection techniques has been commonly used in various fields. One of the remaining challenges in fringe pattern projection is that camera sensor saturation may occur if there is a large range of reflectivity variation across the surface that causes measurement errors. To overcome this problem, a novel fringe pattern projection method is proposed to avoid image saturation and maintain high-intensity modulation for measuring shiny surfaces by adaptively adjusting the pixel-to-pixel projection intensity according to the surface reflectivity. First, three sets of orthogonal color fringe patterns and a sequence of uniform gray-level patterns with different gray levels are projected onto a measured surface by a projector. The patterns are deformed with respect to the object surface and captured by a camera from a different viewpoint. Subsequently, the optimal projection intensity at each pixel is determined by fusing different gray levels and transforming the camera pixel coordinate system into the projector pixel coordinate system. Finally, the adapted fringe patterns are created and used for 3D shape measurement. Experimental results on a flat checkerboard and shiny objects demonstrate that the proposed method can measure shiny surfaces with high accuracy.

The Transition-Edge-Sensor Array for the Micro-X Sounding Rocket

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, Sarah Elizabeth; Chervenak J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porst, J. P.;

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.; Sato, Kz.; Sato, Kj.; Iwabuchi, S.; Suzuki, J.

2017-01-01

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

Research and implementation of simulation for TDICCD remote sensing in vibration of optical axis

NASA Astrophysics Data System (ADS)

Liu, Zhi-hong; Kang, Xiao-jun; Lin, Zhe; Song, Li

2013-12-01

During the exposure time, the charge transfer speed in the push-broom direction and the line-by-lines canning speed of the sensor are required to match each other strictly for a space-borne TDICCD push-broom camera. However, as attitude disturbance of satellite and vibration of camera are inevitable, it is impossible to eliminate the speed mismatch, which will make the signal of different targets overlay each other and result in a decline of image resolution. The effects of velocity mismatch will be visually observed and analyzed by simulating the degradation of image quality caused by the vibration of the optical axis, and it is significant for the evaluation of image quality and design of the image restoration algorithm. How to give a model in time domain and space domain during the imaging time is the problem needed to be solved firstly. As vibration information for simulation is usually given by a continuous curve, the pixels of original image matrix and sensor matrix are discrete, as a result, they cannot always match each other well. The effect of simulation will also be influenced by the discrete sampling in integration time. In conclusion, it is quite significant for improving simulation accuracy and efficiency to give an appropriate discrete modeling and simulation method. The paper analyses discretization schemes in time domain and space domain and presents a method to simulate the quality of image of the optical system in the vibration of the line of sight, which is based on the principle of TDICCD sensor. The gray value of pixels in sensor matrix is obtained by a weighted arithmetic, which solves the problem of pixels dismatch. The result which compared with the experiment of hardware test indicate that this simulation system performances well in accuracy and reliability.

A 3D image sensor with adaptable charge subtraction scheme for background light suppression

NASA Astrophysics Data System (ADS)

Shin, Jungsoon; Kang, Byongmin; Lee, Keechang; Kim, James D. K.

2013-02-01

We present a 3D ToF (Time-of-Flight) image sensor with adaptive charge subtraction scheme for background light suppression. The proposed sensor can alternately capture high resolution color image and high quality depth map in each frame. In depth-mode, the sensor requires enough integration time for accurate depth acquisition, but saturation will occur in high background light illumination. We propose to divide the integration time into N sub-integration times adaptively. In each sub-integration time, our sensor captures an image without saturation and subtracts the charge to prevent the pixel from the saturation. In addition, the subtraction results are cumulated N times obtaining a final result image without background illumination at full integration time. Experimental results with our own ToF sensor show high background suppression performance. We also propose in-pixel storage and column-level subtraction circuit for chiplevel implementation of the proposed method. We believe the proposed scheme will enable 3D sensors to be used in out-door environment.

Reduced signal crosstalk multi neurotransmitter image sensor by microhole array structure

NASA Astrophysics Data System (ADS)

Ogaeri, Yuta; Lee, You-Na; Mitsudome, Masato; Iwata, Tatsuya; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-06-01

A microhole array structure combined with an enzyme immobilization method using magnetic beads can enhance the target discernment capability of a multi neurotransmitter image sensor. Here we report the fabrication and evaluation of the H+-diffusion-preventing capability of the sensor with the array structure. The structure with an SU-8 photoresist has holes with a size of 24.5 × 31.6 µm2. Sensors were prepared with the array structure of three different heights: 0, 15, and 60 µm. When the sensor has the structure of 60 µm height, 48% reduced output voltage is measured at a H+-sensitive null pixel that is located 75 µm from the acetylcholinesterase (AChE)-immobilized pixel, which is the starting point of H+ diffusion. The suppressed H+ immigration is shown in a two-dimensional (2D) image in real time. The sensor parameters, such as height of the array structure and measuring time, are optimized experimentally. The sensor is expected to effectively distinguish various neurotransmitters in biological samples.

Comparative analysis of respiratory motion tracking using Microsoft Kinect v2 sensor.

PubMed

Silverstein, Evan; Snyder, Michael

2018-05-01

To present and evaluate a straightforward implementation of a marker-less, respiratory motion-tracking process utilizing Kinect v2 camera as a gating tool during 4DCT or during radiotherapy treatments. Utilizing the depth sensor on the Kinect as well as author written C# code, respiratory motion of a subject was tracked by recording depth values obtained at user selected points on the subject, with each point representing one pixel on the depth image. As a patient breathes, specific anatomical points on the chest/abdomen will move slightly within the depth image across pixels. By tracking how depth values change for a specific pixel, instead of how the anatomical point moves throughout the image, a respiratory trace can be obtained based on changing depth values of the selected pixel. Tracking these values was implemented via marker-less setup. Varian's RPM system and the Anzai belt system were used in tandem with the Kinect to compare respiratory traces obtained by each using two different subjects. Analysis of the depth information from the Kinect for purposes of phase- and amplitude-based binning correlated well with the RPM and Anzai systems. Interquartile Range (IQR) values were obtained comparing times correlated with specific amplitude and phase percentages against each product. The IQR time spans indicated the Kinect would measure specific percentage values within 0.077 s for Subject 1 and 0.164 s for Subject 2 when compared to values obtained with RPM or Anzai. For 4DCT scans, these times correlate to less than 1 mm of couch movement and would create an offset of 1/2 an acquired slice. By tracking depth values of user selected pixels within the depth image, rather than tracking specific anatomical locations, respiratory motion can be tracked and visualized utilizing the Kinect with results comparable to that of the Varian RPM and Anzai belt. © 2018 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

Autonomous star tracker based on active pixel sensors (APS)

NASA Astrophysics Data System (ADS)

Schmidt, U.

2017-11-01

Star trackers are opto-electronic sensors used onboard of satellites for the autonomous inertial attitude determination. During the last years, star trackers became more and more important in the field of the attitude and orbit control system (AOCS) sensors. High performance star trackers are based up today on charge coupled device (CCD) optical camera heads. The Jena-Optronik GmbH is active in the field of opto-electronic sensors like star trackers since the early 80-ties. Today, with the product family ASTRO5, ASTRO10 and ASTRO15, all marked segments like earth observation, scientific applications and geo-telecom are supplied to European and Overseas customers. A new generation of star trackers can be designed based on the APS detector technical features. The measurement performance of the current CCD based star trackers can be maintained, the star tracker functionality, reliability and robustness can be increased while the unit costs are saved.

Evaluation of Event-Based Algorithms for Optical Flow with Ground-Truth from Inertial Measurement Sensor

PubMed Central

Rueckauer, Bodo; Delbruck, Tobi

2016-01-01

In this study we compare nine optical flow algorithms that locally measure the flow normal to edges according to accuracy and computation cost. In contrast to conventional, frame-based motion flow algorithms, our open-source implementations compute optical flow based on address-events from a neuromorphic Dynamic Vision Sensor (DVS). For this benchmarking we created a dataset of two synthesized and three real samples recorded from a 240 × 180 pixel Dynamic and Active-pixel Vision Sensor (DAVIS). This dataset contains events from the DVS as well as conventional frames to support testing state-of-the-art frame-based methods. We introduce a new source for the ground truth: In the special case that the perceived motion stems solely from a rotation of the vision sensor around its three camera axes, the true optical flow can be estimated using gyro data from the inertial measurement unit integrated with the DAVIS camera. This provides a ground-truth to which we can compare algorithms that measure optical flow by means of motion cues. An analysis of error sources led to the use of a refractory period, more accurate numerical derivatives and a Savitzky-Golay filter to achieve significant improvements in accuracy. Our pure Java implementations of two recently published algorithms reduce computational cost by up to 29% compared to the original implementations. Two of the algorithms introduced in this paper further speed up processing by a factor of 10 compared with the original implementations, at equal or better accuracy. On a desktop PC, they run in real-time on dense natural input recorded by a DAVIS camera. PMID:27199639

Proton-counting radiography for proton therapy: a proof of principle using CMOS APS technology

NASA Astrophysics Data System (ADS)

Poludniowski, G.; Allinson, N. M.; Anaxagoras, T.; Esposito, M.; Green, S.; Manolopoulos, S.; Nieto-Camero, J.; Parker, D. J.; Price, T.; Evans, P. M.

2014-06-01

Despite the early recognition of the potential of proton imaging to assist proton therapy (Cormack 1963 J. Appl. Phys. 34 2722), the modality is still removed from clinical practice, with various approaches in development. For proton-counting radiography applications such as computed tomography (CT), the water-equivalent-path-length that each proton has travelled through an imaged object must be inferred. Typically, scintillator-based technology has been used in various energy/range telescope designs. Here we propose a very different alternative of using radiation-hard CMOS active pixel sensor technology. The ability of such a sensor to resolve the passage of individual protons in a therapy beam has not been previously shown. Here, such capability is demonstrated using a 36 MeV cyclotron beam (University of Birmingham Cyclotron, Birmingham, UK) and a 200 MeV clinical radiotherapy beam (iThemba LABS, Cape Town, SA). The feasibility of tracking individual protons through multiple CMOS layers is also demonstrated using a two-layer stack of sensors. The chief advantages of this solution are the spatial discrimination of events intrinsic to pixelated sensors, combined with the potential provision of information on both the range and residual energy of a proton. The challenges in developing a practical system are discussed.

Proton-counting radiography for proton therapy: a proof of principle using CMOS APS technology

PubMed Central

Poludniowski, G; Allinson, N M; Anaxagoras, T; Esposito, M; Green, S; Manolopoulos, S; Nieto-Camero, J; Parker, D J; Price, T; Evans, P M

2014-01-01

Despite the early recognition of the potential of proton imaging to assist proton therapy the modality is still removed from clinical practice, with various approaches in development. For proton-counting radiography applications such as Computed Tomography (CT), the Water-Equivalent-Path-Length (WEPL) that each proton has travelled through an imaged object must be inferred. Typically, scintillator-based technology has been used in various energy/range telescope designs. Here we propose a very different alternative of using radiation-hard CMOS Active Pixel Sensor (APS) technology. The ability of such a sensor to resolve the passage of individual protons in a therapy beam has not been previously shown. Here, such capability is demonstrated using a 36 MeV cyclotron beam (University of Birmingham Cyclotron, Birmingham, UK) and a 200 MeV clinical radiotherapy beam (iThemba LABS, Cape Town, SA). The feasibility of tracking individual protons through multiple CMOS layers is also demonstrated using a two-layer stack of sensors. The chief advantages of this solution are the spatial discrimination of events intrinsic to pixelated sensors, combined with the potential provision of information on both the range and residual energy of a proton. The challenges in developing a practical system are discussed. PMID:24785680

A near-infrared tip-tilt sensor for the Keck I laser guide star adaptive optics system

NASA Astrophysics Data System (ADS)

Wizinowich, Peter; Smith, Roger; Biasi, Roberto; Cetre, Sylvain; Dekany, Richard; Femenia-Castella, Bruno; Fucik, Jason; Hale, David; Neyman, Chris; Pescoller, Dietrich; Ragland, Sam; Stomski, Paul; Andrighettoni, Mario; Bartos, Randy; Bui, Khanh; Cooper, Andrew; Cromer, John; van Dam, Marcos; Hess, Michael; James, Ean; Lyke, Jim; Rodriguez, Hector; Stalcup, Thomas

2014-07-01

The sky coverage and performance of laser guide star (LGS) adaptive optics (AO) systems is limited by the natural guide star (NGS) used for low order correction. This limitation can be dramatically reduced by measuring the tip and tilt of the NGS in the near-infrared where the NGS is partially corrected by the LGS AO system and where stars are generally several magnitudes brighter than at visible wavelengths. We present the design of a near-infrared tip-tilt sensor that has recently been integrated with the Keck I telescope's LGS AO system along with some initial on-sky results. The implementation involved modifications to the AO bench, real-time control system, and higher level controls and operations software that will also be discussed. The tip-tilt sensor is a H2RG-based near-infrared camera with 0.05 arc second pixels. Low noise at high sample rates is achieved by only reading a small region of interest, from 2×2 to 16×16 pixels, centered on an NGS anywhere in the 100 arc second diameter field. The sensor operates at either Ks or H-band using light reflected by a choice of dichroic beamsplitters located in front of the OSIRIS integral field spectrograph.

The ABLE ACE wavefront sensor

NASA Astrophysics Data System (ADS)

Butts, Robert R.

1997-08-01

A low noise, high resolution Shack-Hartmann wavefront sensor was included in the ABLE-ACE instrument suite to obtain direct high resolution phase measurements of the 0.53 micrometers pulsed laser beam propagated through high altitude atmospheric turbulence. The wavefront sensor employed a Fired geometry using a lenslet array which provided approximately 17 sub-apertures across the pupil. The lenslets focused the light in each sub-aperture onto a 21 by 21 array of pixels in the camera focal plane with 8 pixels in the camera focal plane with 8 pixels across the central lobe of the diffraction limited spot. The goal of the experiment was to measure the effects of the turbulence in the free atmosphere on propagation, but the wavefront sensor also detected the aberrations induced by the aircraft boundary layer and the receiver aircraft internal beam path. Data analysis methods used to extract the desired atmospheric contribution to the phase measurements from the data corrupted by non-atmospheric aberrations are described. Approaches which were used included a reconstruction of the phase as a linear combination of Zernike polynomials coupled with optical estimator sand computation of structure functions of the sub-aperture slopes. The theoretical basis for the data analysis techniques is presented. Results are described, and comparisons with theory and simulations are shown. Estimates of average turbulence strength along the propagation path from the wavefront sensor showed good agreement with other sensor. The Zernike spectra calculated from the wavefront sensor data were consistent with the standard Kolmogorov model of turbulence.

Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy

NASA Technical Reports Server (NTRS)

Bandler, SImon; Stevenson, Thomas; Hsieh, Wen-Ting

2011-01-01

Metallic magnetic calorimeters (MMC) are one of the most promising devices to provide very high energy resolution needed for future astronomical x-ray spectroscopy. MMC detectors can be built to large detector arrays having thousands of pixels. Position-sensitive magnetic (PoSM) microcalorimeters consist of multiple absorbers thermally coupled to one magnetic micro calorimeter. Each absorber element has a different thermal coupling to the MMC, resulting in a distribution of different pulse shapes and enabling position discrimination between the absorber elements. PoSMs therefore achieve the large focal plane area with fewer number of readout channels without compromising spatial sampling. Excellent performance of PoSMs was achieved by optimizing the designs of key parameters such as the thermal conductance among the absorbers, magnetic sensor, and heat sink, as well as the absorber heat capacities. Micro fab ri - cation techniques were developed to construct four-absorber PoSMs, in which each absorber consists of a two-layer composite of bismuth and gold. The energy resolution (FWHM full width at half maximum) was measured to be better than 5 eV at 6 keV x-rays for all four absorbers. Position determination was demonstrated with pulse-shape discrimination, as well as with pulse rise time. X-ray microcalorimeters are usually designed to thermalize as quickly as possible to avoid degradation in energy resolution from position dependence to the pulse shapes. Each pixel consists of an absorber and a temperature sensor, both decoupled from the cold bath through a weak thermal link. Each pixel requires a separate readout channel; for instance, with a SQUID (superconducting quantum interference device). For future astronomy missions where thousands to millions of resolution elements are required, having an individual SQUID readout channel for each pixel becomes difficult. One route to attaining these goals is a position-sensitive detector in which a large continuous or pixilated array of x-ray absorbers shares fewer numbers of temperature sensors. A means of discriminating the signals from different absorber positions, however, needs to be built into the device for each sensor. The design concept for the device is such that the shape of the temperature pulse with time depends on the location of the absorber. This inherent position sensitivity of the signal is then analyzed to determine the location of the event precisely, effectively yielding one device with many sub-pixels. With such devices, the total number of electronic channels required to read out a given number of pixels is significantly reduced. PoSMs were developed that consist of four discrete absorbers connected to a single magnetic sensor. The design concept can be extended to more than four absorbers per sensor. The thermal conductance between the sensor and each absorber is different by design and consequently, the pulse shapes are different depending upon which absorber the xrays are received, allowing position discrimination. A magnetic sensor was used in which a paramagnetic Au:Er temperature-sensitive material is located in a weak magnetic field. Deposition of energy from an x-ray photon causes an increase in temperature, which leads to a change of magnetization of the paramagnetic sensor, which is subsequently read out using a low noise dc-SQUID. The PoSM microcalorimeters are fully microfabricated: the Au:Er sensor is located above the meander, with a thin insulation gap in between. For this position-sensitive device, four electroplated absorbers are thermally linked to the sensor via heat links of different thermal conductance. One pixel is identical to that of a single-pixel design, consisting of an overhanging absorber fabricated directly on top of the sensor. It is therefore very strongly thermally coupled to it. The three other absorbers are supported directly on a silicon-nitride membrane. These absorbers are thermally coupled to the sensor via Ti (5 nm)/Au250 nm) metal links. The strength of the links is parameterized by the number of gold squares making up the link. For detector performance, experimentally different pulse-shapes were demonstrated with 6 keV x-rays, which clearly show different rise times for different absorber positions. For energy resolution measurement, the PoSM was operated at 32 mK with an applied field that was generated using a persistent current of 50 mA. Over the four pixels, energy resolution ranges from 4.4 to 4.7 eV were demonstrated.

Building Change Detection in Very High Resolution Satellite Stereo Image Time Series

NASA Astrophysics Data System (ADS)

Tian, J.; Qin, R.; Cerra, D.; Reinartz, P.

2016-06-01

There is an increasing demand for robust methods on urban sprawl monitoring. The steadily increasing number of high resolution and multi-view sensors allows producing datasets with high temporal and spatial resolution; however, less effort has been dedicated to employ very high resolution (VHR) satellite image time series (SITS) to monitor the changes in buildings with higher accuracy. In addition, these VHR data are often acquired from different sensors. The objective of this research is to propose a robust time-series data analysis method for VHR stereo imagery. Firstly, the spatial-temporal information of the stereo imagery and the Digital Surface Models (DSMs) generated from them are combined, and building probability maps (BPM) are calculated for all acquisition dates. In the second step, an object-based change analysis is performed based on the derivative features of the BPM sets. The change consistence between object-level and pixel-level are checked to remove any outlier pixels. Results are assessed on six pairs of VHR satellite images acquired within a time span of 7 years. The evaluation results have proved the efficiency of the proposed method.

The performance analysis of three-dimensional track-before-detect algorithm based on Fisher-Tippett-Gnedenko theorem

NASA Astrophysics Data System (ADS)

Cho, Hoonkyung; Chun, Joohwan; Song, Sungchan

2016-09-01

The dim moving target tracking from the infrared image sequence in the presence of high clutter and noise has been recently under intensive investigation. The track-before-detect (TBD) algorithm processing the image sequence over a number of frames before decisions on the target track and existence is known to be especially attractive in very low SNR environments (⩽ 3 dB). In this paper, we shortly present a three-dimensional (3-D) TBD with dynamic programming (TBD-DP) algorithm using multiple IR image sensors. Since traditional two-dimensional TBD algorithm cannot track and detect the along the viewing direction, we use 3-D TBD with multiple sensors and also strictly analyze the detection performance (false alarm and detection probabilities) based on Fisher-Tippett-Gnedenko theorem. The 3-D TBD-DP algorithm which does not require a separate image registration step uses the pixel intensity values jointly read off from multiple image frames to compute the merit function required in the DP process. Therefore, we also establish the relationship between the pixel coordinates of image frame and the reference coordinates.

Status and Construction of the Belle II DEPFET pixel system

NASA Astrophysics Data System (ADS)

Lütticke, Florian

2014-06-01

DEpleted P-channel Field Effect Transistor (DEPFET) active pixel detectors combine detection with a first amplification stage in a fully depleted detector, resulting in an superb signal-to-noise ratio even for thin sensors. Two layers of thin (75 micron) silicon DEPFET pixels will be used as the innermost vertex system, very close to the beam pipe in the Belle II detector at the SuperKEKB facility. The status of the 8 million DEPFET pixels detector, latest developments and current system tests will be discussed.

Backside illuminated CMOS-TDI line scanner for space applications

NASA Astrophysics Data System (ADS)

Cohen, O.; Ben-Ari, N.; Nevo, I.; Shiloah, N.; Zohar, G.; Kahanov, E.; Brumer, M.; Gershon, G.; Ofer, O.

2017-09-01

A new multi-spectral line scanner CMOS image sensor is reported. The backside illuminated (BSI) image sensor was designed for continuous scanning Low Earth Orbit (LEO) space applications including A custom high quality CMOS Active Pixels, Time Delayed Integration (TDI) mechanism that increases the SNR, 2-phase exposure mechanism that increases the dynamic Modulation Transfer Function (MTF), very low power internal Analog to Digital Converters (ADC) with resolution of 12 bit per pixel and on chip controller. The sensor has 4 independent arrays of pixels where each array is arranged in 2600 TDI columns with controllable TDI depth from 8 up to 64 TDI levels. A multispectral optical filter with specific spectral response per array is assembled at the package level. In this paper we briefly describe the sensor design and present some electrical and electro-optical recent measurements of the first prototypes including high Quantum Efficiency (QE), high MTF, wide range selectable Full Well Capacity (FWC), excellent linearity of approximately 1.3% in a signal range of 5-85% and approximately 1.75% in a signal range of 2-95% out of the signal span, readout noise of approximately 95 electrons with 64 TDI levels, negligible dark current and power consumption of less than 1.5W total for 4 bands sensor at all operation conditions .

A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

2015-01-01

The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

Resolution studies with the DATURA beam telescope

NASA Astrophysics Data System (ADS)

Jansen, H.

2016-12-01

Detailed studies of the resolution of a EUDET-type beam telescope are carried out using the DATURA beam telescope as an example. The EUDET-type beam telescopes make use of CMOS MIMOSA 26 pixel detectors for particle tracking allowing for precise characterisation of particle-sensing devices. A profound understanding of the performance of the beam telescope as a whole is obtained by a detailed characterisation of the sensors themselves. The differential intrinsic resolution as measured in a MIMOSA 26 sensor is extracted using an iterative pull method, and various quantities that depend on the size of the cluster produced by a traversing charged particle are discussed: the residual distribution, the intra-pixel residual-width distribution and the intra-pixel density distribution of track incident positions.

SeaWiFS technical report series. Volume 31: Stray light in the SeaWiFS radiometer

NASA Technical Reports Server (NTRS)

Hooker, Stanford B. (Editor); Firestone, Elaine R. (Editor); Acker, James G. (Editor); Barnes, Robert A.; Holmes, Alan W.; Esaias, Wayne E.

1995-01-01

Some of the measurements from the Sea-viewing Wide Field-of-view Sensor (SeaWiFS) will not be useful as ocean measurements. For the ocean data set, there are procedures in place to mask the SeaWiFS measurements of clouds and ice. Land measurements will also be masked using a geographic technique based on each measurment's latitude and longitude. Each of these masks involves a source of light much brighter than the ocean. Because of stray light in the SeaWiFS radiometer, light from these bright sources can contaminate ocean measurements located a variable number of pixels away from a bright source. In this document, the sources of stray light in the sensor are examined, and a method is developed for masking measurements near bright targets for stray light effects. In addition, a procedure is proposed for reducing the effects of stray light in the flight data from SeaWiFS. This correction can also reduce the number of pixels masked for stray light. Without these corrections, local area scenes must be masked 10 pixels before and after bright targets in the along-scan direction. The addition of these corrections reduces the along-scan masks to four pixels before and after bright sources. In the along-track direction, the flight data are not corrected, and are masked two pixels before and after. Laboratory measurements have shown that stray light within the instrument changes in a direct ratio to the intensity of the bright source. The measurements have also shown that none of the bands show peculiarities in their stray light response. In other words, the instrument's response is uniform from band to band. The along-scan correction is based on each band's response to a 1 pixel wide bright sources. Since these results are based solely on preflight laboratory measurements, their successful implementation requires compliance with two additional criteria. First, since SeaWiFS has a large data volume, the correction and masking procedures must be such that they can be converted into computationally fast algorithms. Second, they must be shown to operate properly on flight data. The laboratory results, and the corrections and masking procedures that derive from them, should be considered as zeroeth order estimates of the effects that will be found on orbit.

Optical and x-ray characterization of two novel CMOS image sensors

NASA Astrophysics Data System (ADS)

Bohndiek, Sarah E.; Arvanitis, Costas D.; Venanzi, Cristian; Royle, Gary J.; Clark, Andy T.; Crooks, Jamie P.; Prydderch, Mark L.; Turchetta, Renato; Blue, Andrew; Speller, Robert D.

2007-02-01

A UK consortium (MI3) has been founded to develop advanced CMOS pixel designs for scientific applications. Vanilla, a 520x520 array of 25μm pixels benefits from flushed reset circuitry for low noise and random pixel access for region of interest (ROI) readout. OPIC, a 64x72 test structure array of 30μm digital pixels has thresholding capabilities for sparse readout at 3,700fps. Characterization is performed with both optical illumination and x-ray exposure via a scintillator. Vanilla exhibits 34+/-3e - read noise, interactive quantum efficiency of 54% at 500nm and can read a 6x6 ROI at 24,395fps. OPIC has 46+/-3e - read noise and a wide dynamic range of 65dB due to high full well capacity. Based on these characterization studies, Vanilla could be utilized in applications where demands include high spectral response and high speed region of interest readout while OPIC could be used for high speed, high dynamic range imaging.

First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size

NASA Astrophysics Data System (ADS)

Zaťko, B.; Kubanda, D.; Žemlička, J.; Šagátová, A.; Zápražný, Z.; Boháček, P.; Nečas, V.; Mora, Y.; Pichotka, M.; Dudák, J.

2018-02-01

In this work, we have focused on Timepix detectors coupled with the semi-insulating GaAs material sensor. We used undoped bulk GaAs material with the thickness of 350 μm. We prepared and tested four pixelated detectors with 165 μm and 220 μm pixel size with two versions of technology preparation, without and with wet chemically etched trenches around each pixel. We have carried out adjustment of GaAs Timepix detectors to optimize their performance. The energy calibration of one GaAs Timepix detector in Time-over-threshold mode was performed with the use of 241Am and 133Ba radioisotopes. We were able to detect γ-photons with the energy up to 160 keV. The X-ray imaging quality of GaAs Timepix detector was tested with X-ray source using various samples. After flat field we obtained very promising imaging performance of tested GaAs Timepix detectors.

CAOS-CMOS camera.

PubMed

Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

2016-06-13

Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

NASA Astrophysics Data System (ADS)

Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

2018-01-01

We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

High responsivity CMOS imager pixel implemented in SOI technology

NASA Technical Reports Server (NTRS)

Zheng, X.; Wrigley, C.; Yang, G.; Pain, B.

2000-01-01

Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

Improved charge injection device and a focal plane interface electronics board for stellar tracking

NASA Technical Reports Server (NTRS)

Michon, G. J.; Burke, H. K.

1984-01-01

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

AEDC Sensor T&E Methodology

DTIC Science & Technology

1995-07-01

designated pixel. OTF analysis will be similar to the analysis discussed previously. Any nonuniformity in the response of the chosen pixel to the...not seen by the trace. Nonuniformity of the pixel response must be also be taken into account. Background measurements of the maximum and minimum...to the background field of regard. To incorporate and support interactive CLDWSG operation and to accommodate simulation of nonuniform anisoplanatic

Distributed Antenna-Coupled TES for FIR Detectors Arrays

NASA Technical Reports Server (NTRS)

Day, Peter K.; Leduc, Henry G.; Dowell, C. Darren; Lee, Richard A.; Zmuidzinas, Jonas

2007-01-01

We describe a new architecture for a superconducting detector for the submillimeter and far-infrared. This detector uses a distributed hot-electron transition edge sensor (TES) to collect the power from a focal-plane-filling slot antenna array. The sensors lay directly across the slots of the antenna and match the antenna impedance of about 30 ohms. Each pixel contains many sensors that are wired in parallel as a single distributed TES, which results in a low impedance that readily matches to a multiplexed SQUID readout These detectors are inherently polarization sensitive, with very low cross-polarization response, but can also be configured to sum both polarizations. The dual-polarization design can have a bandwidth of 50The use of electron-phonon decoupling eliminates the need for micro-machining, making the focal plane much easier to fabricate than with absorber-coupled, mechanically isolated pixels. We discuss applications of these detectors and a hybridization scheme compatible with arrays of tens of thousands of pixels.

4K x 2K pixel color video pickup system

NASA Astrophysics Data System (ADS)

Sugawara, Masayuki; Mitani, Kohji; Shimamoto, Hiroshi; Fujita, Yoshihiro; Yuyama, Ichiro; Itakura, Keijirou

1998-12-01

This paper describes the development of an experimental super- high-definition color video camera system. During the past several years there has been much interest in super-high- definition images as the next generation image media. One of the difficulties in implementing a super-high-definition motion imaging system is constructing the image-capturing section (camera). Even the state-of-the-art semiconductor technology can not realize the image sensor which has enough pixels and output data rate for super-high-definition images. The present study is an attempt to fill the gap in this respect. The authors intend to solve the problem by using new imaging method in which four HDTV sensors are attached on a new color separation optics so that their pixel sample pattern forms checkerboard pattern. A series of imaging experiments demonstrate that this technique is an effective approach to capturing super-high-definition moving images in the present situation where no image sensors exist for such images.

Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

2016-07-01

The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

Satellite-Sensor Calibration Verification Using the Cloud-Shadow Method

NASA Technical Reports Server (NTRS)

Reinersman, P.; Carder, K. L.; Chen, F. R.

1995-01-01

An atmospheric-correction method which uses cloud-shaded pixels together with pixels in a neighboring region of similar optical properties is described. This cloud-shadow method uses the difference between the total radiance values observed at the sensor for these two regions, thus removing the nearly identical atmospheric radiance contributions to the two signals (e.g. path radiance and Fresnel-reflected skylight). What remains is largely due to solar photons backscattered from beneath the sea to dominate the residual signal. Normalization by the direct solar irradiance reaching the sea surface and correction for some second-order effects provides the remote-sensing reflectance of the ocean at the location of the neighbor region, providing a known 'ground target' spectrum for use in testing the calibration of the sensor. A similar approach may be useful for land targets if horizontal homogeneity of scene reflectance exists about the shadow. Monte Carlo calculations have been used to correct for adjacency effects and to estimate the differences in the skylight reaching the shadowed and neighbor pixels.

Modulated CMOS camera for fluorescence lifetime microscopy.

PubMed

Chen, Hongtao; Holst, Gerhard; Gratton, Enrico

2015-12-01

Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) is a fast and accurate method to measure the fluorescence lifetime of entire images. However, the complexity and high costs involved in construction of such a system limit the extensive use of this technique. PCO AG recently released the first luminescence lifetime imaging camera based on a high frequency modulated CMOS image sensor, QMFLIM2. Here we tested and provide operational procedures to calibrate the camera and to improve the accuracy using corrections necessary for image analysis. With its flexible input/output options, we are able to use a modulated laser diode or a 20 MHz pulsed white supercontinuum laser as the light source. The output of the camera consists of a stack of modulated images that can be analyzed by the SimFCS software using the phasor approach. The nonuniform system response across the image sensor must be calibrated at the pixel level. This pixel calibration is crucial and needed for every camera settings, e.g. modulation frequency and exposure time. A significant dependency of the modulation signal on the intensity was also observed and hence an additional calibration is needed for each pixel depending on the pixel intensity level. These corrections are important not only for the fundamental frequency, but also for the higher harmonics when using the pulsed supercontinuum laser. With these post data acquisition corrections, the PCO CMOS-FLIM camera can be used for various biomedical applications requiring a large frame and high speed acquisition. © 2015 Wiley Periodicals, Inc.

Modelling and testing the x-ray performance of CCD and CMOS APS detectors using numerical finite element simulations

NASA Astrophysics Data System (ADS)

Weatherill, Daniel P.; Stefanov, Konstantin D.; Greig, Thomas A.; Holland, Andrew D.

2014-07-01

Pixellated monolithic silicon detectors operated in a photon-counting regime are useful in spectroscopic imaging applications. Since a high energy incident photon may produce many excess free carriers upon absorption, both energy and spatial information can be recovered by resolving each interaction event. The performance of these devices in terms of both the energy and spatial resolution is in large part determined by the amount of diffusion which occurs during the collection of the charge cloud by the pixels. Past efforts to predict the X-ray performance of imaging sensors have used either analytical solutions to the diffusion equation or simplified monte carlo electron transport models. These methods are computationally attractive and highly useful but may be complemented using more physically detailed models based on TCAD simulations of the devices. Here we present initial results from a model which employs a full transient numerical solution of the classical semiconductor equations to model charge collection in device pixels under stimulation from initially Gaussian photogenerated charge clouds, using commercial TCAD software. Realistic device geometries and doping are included. By mapping the pixel response to different initial interaction positions and charge cloud sizes, the charge splitting behaviour of the model sensor under various illuminations and operating conditions is investigated. Experimental validation of the model is presented from an e2v CCD30-11 device under varying substrate bias, illuminated using an Fe-55 source.

iPadPix—A novel educational tool to visualise radioactivity measured by a hybrid pixel detector

NASA Astrophysics Data System (ADS)

Keller, O.; Schmeling, S.; Müller, A.; Benoit, M.

2016-11-01

With the ability to attribute signatures of ionising radiation to certain particle types, pixel detectors offer a unique advantage over the traditional use of Geiger-Müller tubes also in educational settings. We demonstrate in this work how a Timepix readout chip combined with a standard 300μm pixelated silicon sensor can be used to visualise radioactivity in real-time and by means of augmented reality. The chip family is the result of technology transfer from High Energy Physics at CERN and facilitated by the Medipix Collaboration. This article summarises the development of a prototype based on an iPad mini and open source software detailed in ref. [1]. Appropriate experimental activities that explore natural radioactivity and everyday objects are given to demonstrate the use of this new tool in educational settings.

A method of minimum volume simplex analysis constrained unmixing for hyperspectral image

NASA Astrophysics Data System (ADS)

Zou, Jinlin; Lan, Jinhui; Zeng, Yiliang; Wu, Hongtao

2017-07-01

The signal recorded by a low resolution hyperspectral remote sensor from a given pixel, letting alone the effects of the complex terrain, is a mixture of substances. To improve the accuracy of classification and sub-pixel object detection, hyperspectral unmixing(HU) is a frontier-line in remote sensing area. Unmixing algorithm based on geometric has become popular since the hyperspectral image possesses abundant spectral information and the mixed model is easy to understand. However, most of the algorithms are based on pure pixel assumption, and since the non-linear mixed model is complex, it is hard to obtain the optimal endmembers especially under a highly mixed spectral data. To provide a simple but accurate method, we propose a minimum volume simplex analysis constrained (MVSAC) unmixing algorithm. The proposed approach combines the algebraic constraints that are inherent to the convex minimum volume with abundance soft constraint. While considering abundance fraction, we can obtain the pure endmember set and abundance fraction correspondingly, and the final unmixing result is closer to reality and has better accuracy. We illustrate the performance of the proposed algorithm in unmixing simulated data and real hyperspectral data, and the result indicates that the proposed method can obtain the distinct signatures correctly without redundant endmember and yields much better performance than the pure pixel based algorithm.

The DFMS sensor of ROSINA onboard Rosetta: A computer-assisted approach to resolve mass calibration, flux calibration, and fragmentation issues

NASA Astrophysics Data System (ADS)

Dhooghe, Frederik; De Keyser, Johan; Altwegg, Kathrin; Calmonte, Ursina; Fuselier, Stephen; Hässig, Myrtha; Berthelier, Jean-Jacques; Mall, Urs; Gombosi, Tamas; Fiethe, Björn

2014-05-01

Rosetta will rendezvous with comet 67P/Churyumov-Gerasimenko in May 2014. The Rosetta Orbiter Spectrometer for Ion and Neutral Analysis (ROSINA) instrument comprises three sensors: the pressure sensor (COPS) and two mass spectrometers (RTOF and DFMS). The double focusing mass spectrometer DFMS is optimized for mass resolution and consists of an ion source, a mass analyser and a detector package operated in analogue mode. The magnetic sector of the analyser provides the mass dispersion needed for use with the position-sensitive microchannel plate (MCP) detector. Ions that hit the MCP release electrons that are recorded digitally using a linear electron detector array with 512 pixels. Raw data for a given commanded mass are obtained as ADC counts as a function of pixel number. We have developed a computer-assisted approach to address the problem of calibrating such raw data. Mass calibration: Ion identification is based on their mass-over-charge (m/Z) ratio and requires an accurate correlation of pixel number and m/Z. The m/Z scale depends on the commanded mass and the magnetic field and can be described by an offset of the pixel associated with the commanded mass from the centre of the detector array and a scaling factor. Mass calibration is aided by the built-in gas calibration unit (GCU), which allows one to inject a known gas mixture into the instrument. In a first, fully automatic step of the mass calibration procedure, the calibration uses all GCU spectra and extracts information about the mass peak closest to the centre pixel, since those peaks can be identified unambiguously. This preliminary mass-calibration relation can then be applied to all spectra. Human-assisted identification of additional mass peaks further improves the mass calibration. Ion flux calibration: ADC counts per pixel are converted to ion counts per second using the overall gain, the individual pixel gain, and the total data accumulation time. DFMS can perform an internal scan to determine the pixel gain and related detector aging. The software automatically corrects for these effects to calibrate the fluxes. The COPS sensor can be used for an a posteriori calibration of the fluxes. Neutral gas number densities: Neutrals are ionized in the ion source before they are transferred to the mass analyser, but during this process fragmentation may occur. Our software allows one to identify which neutrals entered the instrument, given the ion fragments that are detected. First, multiple spectra with a limited mass range are combined to provide an overview of as many ion fragments as possible. We then exploit a fragmentation database to assist in figuring out the relation between entering species and recorded fragments. Finally, using experimentally determined sensitivities, gas number densities are obtained. The instrument characterisation (experimental determination of sensitivities, fragmentation patterns for the most common neutral species, etc.) has been conducted by the consortium using an instrument copy in the University of Bern test facilities during the cruise phase of the mission.

Method and apparatus for determining the coordinates of an object

DOEpatents

Pedersen, Paul S; Sebring, Robert

2003-01-01

A method and apparatus is described for determining the coordinates on the surface of an object which is illuminated by a beam having pixels which have been modulated according to predetermined mathematical relationships with pixel position within the modulator. The reflected illumination is registered by an image sensor at a known location which registers the intensity of the pixels as received. Computations on the intensity, which relate the pixel intensities received to the pixel intensities transmitted at the modulator, yield the proportional loss of intensity and planar position of the originating pixels. The proportional loss and position information can then be utilized within triangulation equations to resolve the coordinates of associated surface locations on the object.

Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process

NASA Astrophysics Data System (ADS)

Zhang, Ying; Zhu, Hongbo; Zhang, Liang; Fu, Min

2016-09-01

The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (Q / C), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 μm CMOS imaging sensor process and we will verify the simulation results with future measurements.

High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

PubMed

Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

2015-03-24

A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

Design of integrated eye tracker-display device for head mounted systems

NASA Astrophysics Data System (ADS)

David, Y.; Apter, B.; Thirer, N.; Baal-Zedaka, I.; Efron, U.

2009-08-01

We propose an Eye Tracker/Display system, based on a novel, dual function device termed ETD, which allows sharing the optical paths of the Eye tracker and the display and on-chip processing. The proposed ETD design is based on a CMOS chip combining a Liquid-Crystal-on-Silicon (LCoS) micro-display technology with near infrared (NIR) Active Pixel Sensor imager. The ET operation allows capturing the Near IR (NIR) light, back-reflected from the eye's retina. The retinal image is then used for the detection of the current direction of eye's gaze. The design of the eye tracking imager is based on the "deep p-well" pixel technology, providing low crosstalk while shielding the active pixel circuitry, which serves the imaging and the display drivers, from the photo charges generated in the substrate. The use of the ETD in the HMD Design enables a very compact design suitable for Smart Goggle applications. A preliminary optical, electronic and digital design of the goggle and its associated ETD chip and digital control, are presented.

A Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor.

PubMed

Yu, Changwei; Nie, Kaiming; Xu, Jiangtao; Gao, Jing

2016-09-23

In this paper, an accumulation technique suitable for digital domain CMOS time delay integration (TDI) image sensors is proposed to reduce power consumption without degrading the rate of imaging. In terms of the slight variations of quantization codes among different pixel exposures towards the same object, the pixel array is divided into two groups: one is for coarse quantization of high bits only, and the other one is for fine quantization of low bits. Then, the complete quantization codes are composed of both results from the coarse-and-fine quantization. The equivalent operation comparably reduces the total required bit numbers of the quantization. In the 0.18 µm CMOS process, two versions of 16-stage digital domain CMOS TDI image sensor chains based on a 10-bit successive approximate register (SAR) analog-to-digital converter (ADC), with and without the proposed technique, are designed. The simulation results show that the average power consumption of slices of the two versions are 6 . 47 × 10 - 8 J/line and 7 . 4 × 10 - 8 J/line, respectively. Meanwhile, the linearity of the two versions are 99.74% and 99.99%, respectively.

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

PubMed

Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

2014-07-07

Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, x-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications.

An asynchronous data-driven readout prototype for CEPC vertex detector

NASA Astrophysics Data System (ADS)

Yang, Ping; Sun, Xiangming; Huang, Guangming; Xiao, Le; Gao, Chaosong; Huang, Xing; Zhou, Wei; Ren, Weiping; Li, Yashu; Liu, Jianchao; You, Bihui; Zhang, Li

2017-12-01

The Circular Electron Positron Collider (CEPC) is proposed as a Higgs boson and/or Z boson factory for high-precision measurements on the Higgs boson. The precision of secondary vertex impact parameter plays an important role in such measurements which typically rely on flavor-tagging. Thus silicon CMOS Pixel Sensors (CPS) are the most promising technology candidate for a CEPC vertex detector, which can most likely feature a high position resolution, a low power consumption and a fast readout simultaneously. For the R&D of the CEPC vertex detector, we have developed a prototype MIC4 in the Towerjazz 180 nm CMOS Image Sensor (CIS) process. We have proposed and implemented a new architecture of asynchronous zero-suppression data-driven readout inside the matrix combined with a binary front-end inside the pixel. The matrix contains 128 rows and 64 columns with a small pixel pitch of 25 μm. The readout architecture has implemented the traditional OR-gate chain inside a super pixel combined with a priority arbiter tree between the super pixels, only reading out relevant pixels. The MIC4 architecture will be introduced in more detail in this paper. It will be taped out in May and will be characterized when the chip comes back.

Development of monolithic pixel detector with SOI technology for the ILC vertex detector

NASA Astrophysics Data System (ADS)

Yamada, M.; Ono, S.; Tsuboyama, T.; Arai, Y.; Haba, J.; Ikegami, Y.; Kurachi, I.; Togawa, M.; Mori, T.; Aoyagi, W.; Endo, S.; Hara, K.; Honda, S.; Sekigawa, D.

2018-01-01

We have been developing a monolithic pixel sensor for the International Linear Collider (ILC) vertex detector with the 0.2 μm FD-SOI CMOS process by LAPIS Semiconductor Co., Ltd. We aim to achieve a 3 μm single-point resolution required for the ILC with a 20×20 μm2 pixel. Beam bunch crossing at the ILC occurs every 554 ns in 1-msec-long bunch trains with an interval of 200 ms. Each pixel must record the charge and time stamp of a hit to identify a collision bunch for event reconstruction. Necessary functions include the amplifier, comparator, shift register, analog memory and time stamp implementation in each pixel, and column ADC and Zero-suppression logic on the chip. We tested the first prototype sensor, SOFIST ver.1, with a 120 GeV proton beam at the Fermilab Test Beam Facility in January 2017. SOFIST ver.1 has a charge sensitive amplifier and two analog memories in each pixel, and an 8-bit Wilkinson-type ADC is implemented for each column on the chip. We measured the residual of the hit position to the reconstructed track. The standard deviation of the residual distribution fitted by a Gaussian is better than 3 μm.

Two-dimensional materials based transparent flexible electronics

NASA Astrophysics Data System (ADS)

Yu, Lili; Ha, Sungjae; El-Damak, Dina; McVay, Elaine; Ling, Xi; Chandrakasan, Anantha; Kong, Jing; Palacios, Tomas

2015-03-01

Two-dimensional (2D) materials have generated great interest recently as a set of tools for electronics, as these materials can push electronics beyond traditional boundaries. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. These thin, lightweight, bendable, highly rugged and low-power devices may bring dramatic changes in information processing, communications and human-electronic interaction. In this report, for the first time, we demonstrate two complex transparent flexible systems based on molybdenum disulfide (MoS2) grown by chemical vapor method: a transparent active-matrix organic light-emitting diode (AMOLED) display and a MoS2 wireless link for sensor nodes. The 1/2 x 1/2 square inch, 4 x 5 pixels AMOLED structures are built on transparent substrates, containing MoS2 back plane circuit and OLEDs integrated on top of it. The back plane circuit turns on and off the individual pixel with two MoS2 transistors and a capacitor. The device is designed and fabricated based on SPICE simulation to achieve desired DC and transient performance. We have also demonstrated a MoS2 wireless self-powered sensor node. The system consists of as energy harvester, rectifier, sensor node and logic units. AC signals from the environment, such as near-field wireless power transfer, piezoelectric film and RF signal, are harvested, then rectified into DC signal by a MoS2 diode. CIQM, CICS, SRC.

Image sensor with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2006-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

PubMed

Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

2017-06-19

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

Sensor development at the semiconductor laboratory of the Max-Planck-Society

NASA Astrophysics Data System (ADS)

Bähr, A.; Lechner, P.; Ninkovic, J.

2017-12-01

For more than twenty years the semiconductor laboratory of the Max-Planck Society (MPG-HLL) is developing high-performing, specialised, scientific silicon sensors including the integration of amplifying electronics on the sensor chip. This paper summarises the actual status of these devices like pnCCDs and DePFET Active Pixel Sensors and their applications.

A Sensitive Dynamic and Active Pixel Vision Sensor for Color or Neural Imaging Applications.

PubMed

Moeys, Diederik Paul; Corradi, Federico; Li, Chenghan; Bamford, Simeon A; Longinotti, Luca; Voigt, Fabian F; Berry, Stewart; Taverni, Gemma; Helmchen, Fritjof; Delbruck, Tobi

2018-02-01

Applications requiring detection of small visual contrast require high sensitivity. Event cameras can provide higher dynamic range (DR) and reduce data rate and latency, but most existing event cameras have limited sensitivity. This paper presents the results of a 180-nm Towerjazz CIS process vision sensor called SDAVIS192. It outputs temporal contrast dynamic vision sensor (DVS) events and conventional active pixel sensor frames. The SDAVIS192 improves on previous DAVIS sensors with higher sensitivity for temporal contrast. The temporal contrast thresholds can be set down to 1% for negative changes in logarithmic intensity (OFF events) and down to 3.5% for positive changes (ON events). The achievement is possible through the adoption of an in-pixel preamplification stage. This preamplifier reduces the effective intrascene DR of the sensor (70 dB for OFF and 50 dB for ON), but an automated operating region control allows up to at least 110-dB DR for OFF events. A second contribution of this paper is the development of characterization methodology for measuring DVS event detection thresholds by incorporating a measure of signal-to-noise ratio (SNR). At average SNR of 30 dB, the DVS temporal contrast threshold fixed pattern noise is measured to be 0.3%-0.8% temporal contrast. Results comparing monochrome and RGBW color filter array DVS events are presented. The higher sensitivity of SDAVIS192 make this sensor potentially useful for calcium imaging, as shown in a recording from cultured neurons expressing calcium sensitive green fluorescent protein GCaMP6f.

Broadband Terahertz Computed Tomography Using a 5k-pixel Real-time THz Camera

NASA Astrophysics Data System (ADS)

Trichopoulos, Georgios C.; Sertel, Kubilay

2015-07-01

We present a novel THz computed tomography system that enables fast 3-dimensional imaging and spectroscopy in the 0.6-1.2 THz band. The system is based on a new real-time broadband THz camera that enables rapid acquisition of multiple cross-sectional images required in computed tomography. Tomographic reconstruction is achieved using digital images from the densely-packed large-format (80×64) focal plane array sensor located behind a hyper-hemispherical silicon lens. Each pixel of the sensor array consists of an 85 μm × 92 μm lithographically fabricated wideband dual-slot antenna, monolithically integrated with an ultra-fast diode tuned to operate in the 0.6-1.2 THz regime. Concurrently, optimum impedance matching was implemented for maximum pixel sensitivity, enabling 5 frames-per-second image acquisition speed. As such, the THz computed tomography system generates diffraction-limited resolution cross-section images as well as the three-dimensional models of various opaque and partially transparent objects. As an example, an over-the-counter vitamin supplement pill is imaged and its material composition is reconstructed. The new THz camera enables, for the first time, a practical application of THz computed tomography for non-destructive evaluation and biomedical imaging.

Rapid Response Flood Water Mapping

NASA Technical Reports Server (NTRS)

Policelli, Fritz; Brakenridge, G. R.; Coplin, A.; Bunnell, M.; Wu, L.; Habib, Shahid; Farah, H.

2010-01-01

Since the beginning of operation of the MODIS instrument on the NASA Terra satellite at the end of 1999, an exceptionally useful sensor and public data stream have been available for many applications including the rapid and precise characterization of terrestrial surface water changes. One practical application of such capability is the near-real time mapping of river flood inundation. We have developed a surface water mapping methodology based on using only bands 1 (620-672 nm) and 2 (841-890 nm). These are the two bands at 250 m, and the use of only these bands maximizes the resulting map detail. In this regard, most water bodies are strong absorbers of incoming solar radiation at the band 2 wavelength: it could be used alone, via a thresholding procedure, to separate water (dark, low radiance or reflectance pixels) from land (much brighter pixels) (1, 2). Some previous water mapping procedures have in fact used such single band data from this and other sensors that include similar wavelength channels. Adding the second channel of data (band 1), however, allows a band ratio approach which permits sediment-laden water, often relatively light at band 2 wavelengths, to still be discriminated, and, as well, provides some removal of error by reducing the number of cloud shadow pixels that would otherwise be misclassified as water.

Studies for a 10 μs, thin, high resolution CMOS pixel sensor for future vertex detectors

NASA Astrophysics Data System (ADS)

Voutsinas, G.; Amar-Youcef, S.; Baudot, J.; Bertolone, G.; Brogna, A.; Chon-Sen, N.; Claus, G.; Colledani, C.; Dorokhov, A.; Dozière, G.; Dulinski, W.; Degerli, Y.; De Masi, R.; Deveaux, M.; Gelin, M.; Goffe, M.; Hu-Guo, Ch.; Himmi, A.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Müntz, C.; Orsini, F.; Santos, C.; Schrader, C.; Specht, M.; Stroth, J.; Valin, I.; Wagner, F. M.; Winter, M.

2011-06-01

Future high energy physics (HEP) experiments require detectors with unprecedented performances for track and vertex reconstruction. These requirements call for high precision sensors, with low material budget and short integration time. The development of CMOS sensors for HEP applications was initiated at IPHC Strasbourg more than 10 years ago, motivated by the needs for vertex detectors at the International Linear Collider (ILC) [R. Turchetta et al, NIM A 458 (2001) 677]. Since then several other applications emerged. The first real scale digital CMOS sensor MIMOSA26 equips Flavour Tracker at RHIC, as well as for the microvertex detector of the CBM experiment at FAIR. MIMOSA sensors may also offer attractive performances for the ALICE upgrade at LHC. This paper will demonstrate the substantial performance improvement of CMOS sensors based on a high resistivity epitaxial layer. First studies for integrating the sensors into a detector system will be addressed and finally the way to go to a 10 μs readout sensor will be discussed.

Contrast computation methods for interferometric measurement of sensor modulation transfer function

NASA Astrophysics Data System (ADS)

Battula, Tharun; Georgiev, Todor; Gille, Jennifer; Goma, Sergio

2018-01-01

Accurate measurement of image-sensor frequency response over a wide range of spatial frequencies is very important for analyzing pixel array characteristics, such as modulation transfer function (MTF), crosstalk, and active pixel shape. Such analysis is especially significant in computational photography for the purposes of deconvolution, multi-image superresolution, and improved light-field capture. We use a lensless interferometric setup that produces high-quality fringes for measuring MTF over a wide range of frequencies (here, 37 to 434 line pairs per mm). We discuss the theoretical framework, involving Michelson and Fourier contrast measurement of the MTF, addressing phase alignment problems using a moiré pattern. We solidify the definition of Fourier contrast mathematically and compare it to Michelson contrast. Our interferometric measurement method shows high detail in the MTF, especially at high frequencies (above Nyquist frequency). We are able to estimate active pixel size and pixel pitch from measurements. We compare both simulation and experimental MTF results to a lens-free slanted-edge implementation using commercial software.

Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters.

PubMed

Yu, Yan; Chen, Qin; Wen, Long; Hu, Xin; Zhang, Hui-Fang

2015-08-24

Imaging resolution of complementary metal oxide semiconductor (CMOS) image sensor (CIS) keeps increasing to approximately 7k × 4k. As a result, the pixel size shrinks down to sub-2μm, which greatly increases the spatial optical crosstalk. Recently, plasmonic color filter was proposed as an alternative to conventional colorant pigmented ones. However, there is little work on its size effect and the spatial optical crosstalk in a model of CIS. By numerical simulation, we investigate the size effect of nanocross array plasmonic color filters and analyze the spatial optical crosstalk of each pixel in a Bayer array of a CIS with a pixel size of 1μm. It is found that the small pixel size deteriorates the filtering performance of nanocross color filters and induces substantial spatial color crosstalk. By integrating the plasmonic filters in the low Metal layer in standard CMOS process, the crosstalk reduces significantly, which is compatible to pigmented filters in a state-of-the-art backside illumination CIS.

Advanced illumination control algorithm for medical endoscopy applications

NASA Astrophysics Data System (ADS)

Sousa, Ricardo M.; Wäny, Martin; Santos, Pedro; Morgado-Dias, F.

2015-05-01

CMOS image sensor manufacturer, AWAIBA, is providing the world's smallest digital camera modules to the world market for minimally invasive surgery and one time use endoscopic equipment. Based on the world's smallest digital camera head and the evaluation board provided to it, the aim of this paper is to demonstrate an advanced fast response dynamic control algorithm of the illumination LED source coupled to the camera head, over the LED drivers embedded on the evaluation board. Cost efficient and small size endoscopic camera modules nowadays embed minimal size image sensors capable of not only adjusting gain and exposure time but also LED illumination with adjustable illumination power. The LED illumination power has to be dynamically adjusted while navigating the endoscope over changing illumination conditions of several orders of magnitude within fractions of the second to guarantee a smooth viewing experience. The algorithm is centered on the pixel analysis of selected ROIs enabling it to dynamically adjust the illumination intensity based on the measured pixel saturation level. The control core was developed in VHDL and tested in a laboratory environment over changing light conditions. The obtained results show that it is capable of achieving correction speeds under 1 s while maintaining a static error below 3% relative to the total number of pixels on the image. The result of this work will allow the integration of millimeter sized high brightness LED sources on minimal form factor cameras enabling its use in endoscopic surgical robotic or micro invasive surgery.

Integrated readout electronics for Belle II pixel detector

NASA Astrophysics Data System (ADS)

Blanco, R.; Leys, R.; Perić, I.

2018-03-01

This paper describes the readout components for Belle II that have been designed as integrated circuits. The ICs are connected to DEPFET sensor by bump bonding. Three types of ICs have been developed: SWITCHER for pixel matrix control, DCD for readout and digitizing of sensor signals and DHP for digital data processing. The ICs are radiation tolerant and use several novel features, such as the multiple-input differential amplifiers and the fast and radiation hard high-voltage drivers. SWITCHER and DCD have been developed at University of Heidelberg, Karlsruhe Institute of Technology (KIT) and DHP at Bonn University. The IC-development started in 2009 and was accomplished in 2016 with the submissions of final designs. The final ICs for Belle II pixel detector and the related measurement results will be presented in this contribution.

Fabrication of Transition Edge Sensor Microcalorimeters for X-Ray Focal Planes

NASA Technical Reports Server (NTRS)

Chervenak, James A.; Adams, Joseph S.; Audley, Heather; Bandler, Simon R.; Betancourt-Martinez, Gabriele; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline; Lee, Sang Jun;

Pixel-based approach for building heights determination by SAR radargrammetry

NASA Astrophysics Data System (ADS)

Dubois, C.; Thiele, A.; Hinz, S.

2013-10-01

Numerous advances have been made recently in photogrammetry, laser scanning, and remote sensing for the creation of 3D city models. More and more cities are interested in getting 3D city models, be it for urban planning purposes or for supporting public utility companies. In areas often affected by natural disaster, rapid updating of the 3D information may also be useful for helping rescue forces. The high resolutions that can be achieved by the new spaceborne SAR sensor generation enables the analysis of city areas at building level and make those sensors attractive for the extraction of 3D information. Moreover, they present the advantage of weather and sunlight independency, which make them more practicable than optical data, in particular for tasks where rapid response is required. Furthermore, their short revisit time and the possibility of multi-sensor constellation enable providing several acquisitions within a few hours. This opens up the floor for new applications, especially radargrammetric applications, which consider acquisitions taken under different incidence angles. In this paper, we present a new approach for determining building heights, relying only on the radargrammetric analysis of building layover. By taking into account same-side acquisitions, we present the workflow of building height determination. Focus is set on some geometric considerations, pixel-based approach for disparity map calculation, and analysis of the building layover signature for different configurations in order to determine building height.

Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

NASA Astrophysics Data System (ADS)

Vigani, L.; Bortoletto, D.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

2018-02-01

Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

NASA Astrophysics Data System (ADS)

Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

2012-01-01

We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.