Fully 3D-Integrated Pixel Detectors for X-Rays

DOE PAGES

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; ...

2016-01-01

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul

The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch,more » yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e - rms and a conversion gain of 69.5 μV/e - with 2.6 e - rms and 2.7 μV/e - rms pixel-to-pixel variations, respectively, were measured.« less

A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

2015-01-01

The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

Design of an Intelligent Front-End Signal Conditioning Circuit for IR Sensors

NASA Astrophysics Data System (ADS)

de Arcas, G.; Ruiz, M.; Lopez, J. M.; Gutierrez, R.; Villamayor, V.; Gomez, L.; Montojo, Mª. T.

2008-02-01

This paper presents the design of an intelligent front-end signal conditioning system for IR sensors. The system has been developed as an interface between a PbSe IR sensor matrix and a TMS320C67x digital signal processor. The system architecture ensures its scalability so it can be used for sensors with different matrix sizes. It includes an integrator based signal conditioning circuit, a data acquisition converter block, and a FPGA based advanced control block that permits including high level image preprocessing routines such as faulty pixel detection and sensor calibration in the signal conditioning front-end. During the design phase virtual instrumentation technologies proved to be a very valuable tool for prototyping when choosing the best A/D converter type for the application. Development time was significantly reduced due to the use of this technology.

Large Format CMOS-based Detectors for Diffraction Studies

NASA Astrophysics Data System (ADS)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at reasonable cost.

Design and characterization of the ePix10k: a high dynamic range integrating pixel ASIC for LCLS detectors

NASA Astrophysics Data System (ADS)

Caragiulo, P.; Dragone, A.; Markovic, B.; Herbst, R.; Nishimura, K.; Reese, B.; Herrmann, S.; Hart, P.; Blaj, G.; Segal, J.; Tomada, A.; Hasi, J.; Carini, G.; Kenney, C.; Haller, G.

2015-05-01

ePix10k is a variant of a novel class of integrating pixel ASICs architectures optimized for the processing of signals in second generation LINAC Coherent Light Source (LCLS) X-Ray cameras. The ASIC is optimized for high dynamic range application requiring high spatial resolution and fast frame rates. ePix ASICs are based on a common platform composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog to digital converters per column. The ePix10k variant has 100um×100um pixels arranged in a 176×192 matrix, a resolution of 140e- r.m.s. and a signal range of 3.5pC (10k photons at 8keV). In its final version it will be able to sustain a frame rate of 2kHz. A first prototype has been fabricated and characterized. Performance in terms of noise, linearity, uniformity, cross-talk, together with preliminary measurements with bump bonded sensors are reported here.

Carbon nanotube active-matrix backplanes for conformal electronics and sensors.

PubMed

Takahashi, Toshitake; Takei, Kuniharu; Gillies, Andrew G; Fearing, Ronald S; Javey, Ali

2011-12-14

In this paper, we report a promising approach for fabricating large-scale flexible and stretchable electronics using a semiconductor-enriched carbon nanotube solution. Uniform semiconducting nanotube networks with superb electrical properties (mobility of ∼20 cm2 V(-1) s(-1) and ION/IOFF of ∼10(4)) are obtained on polyimide substrates. The substrate is made stretchable by laser cutting a honeycomb mesh structure, which combined with nanotube-network transistors enables highly robust conformal electronic devices with minimal device-to-device stochastic variations. The utility of this device concept is demonstrated by fabricating an active-matrix backplane (12×8 pixels, physical size of 6×4 cm2) for pressure mapping using a pressure sensitive rubber as the sensor element.

Identifying High-Traffic Patterns in the Workplace with Radio Tomographic Imaging in 3D Wireless Sensor Networks

DTIC Science & Technology

2014-03-27

TOMOGRAPHIC IMAGING IN 3D WIRELESS SENSOR NETWORKS Thea S. Danella, B.S.E.E. Captain, USAF Approved: //signed// Richard K. Martin , PhD (Chairman) //signed...have every one of them in my life. I want to also thank my advisor, Dr. Richard K. Martin , and fellow student, Mr. Jason Pennington. They were...of the Fisher Information Matrix (FIM) J, and as such are the lower bounds on the Normalized Mean Squared Error (NMSE)R for pixel p. In [49], Martin et

Perceptual Color Characterization of Cameras

PubMed Central

Vazquez-Corral, Javier; Connah, David; Bertalmío, Marcelo

2014-01-01

Color camera characterization, mapping outputs from the camera sensors to an independent color space, such as XY Z, is an important step in the camera processing pipeline. Until now, this procedure has been primarily solved by using a 3 × 3 matrix obtained via a least-squares optimization. In this paper, we propose to use the spherical sampling method, recently published by Finlayson et al., to perform a perceptual color characterization. In particular, we search for the 3 × 3 matrix that minimizes three different perceptual errors, one pixel based and two spatially based. For the pixel-based case, we minimize the CIE ΔE error, while for the spatial-based case, we minimize both the S-CIELAB error and the CID error measure. Our results demonstrate an improvement of approximately 3% for the ΔE error, 7% for the S-CIELAB error and 13% for the CID error measures. PMID:25490586

Recent developments in OLED-based chemical and biological sensors

NASA Astrophysics Data System (ADS)

Shinar, Joseph; Zhou, Zhaoqun; Cai, Yuankun; Shinar, Ruth

2007-09-01

Recent developments in the structurally integrated OLED-based platform of luminescent chemical and biological sensors are reviewed. In this platform, an array of OLED pixels, which is structurally integrated with the sensing elements, is used as the photoluminescence (PL) excitation source. The structural integration is achieved by fabricating the OLED array and the sensing element on opposite sides of a common glass substrate or on two glass substrates that are attached back-to-back. As it does not require optical fibers, lens, or mirrors, it results in a uniquely simple, low-cost, and potentially rugged geometry. The recent developments on this platform include the following: (1) Enhancing the performance of gas-phase and dissolved oxygen sensors. This is achieved by (a) incorporating high-dielectric TiO II nanoparticles in the oxygen-sensitive Pt and Pd octaethylporphyrin (PtOEP and PdOEP, respectively)- doped polystyrene (PS) sensor films, and (b) embedding the oxygen-sensitive dyes in a matrix of polymer blends such as PS:polydimethylsiloxane (PDMS). (2) Developing sensor arrays for simultaneous detection of multiple serum analytes, including oxygen, glucose, lactate, and alcohol. The sensing element for each analyte consists of a PtOEP-doped PS oxygen sensor, and a solution containing the oxidase enzyme specific to the analyte. Each sensing element is coupled to two individually addressable OLED pixels and a Si photodiode photodetector (PD). (3) Enhancing the integration of the platform, whereby a PD array is also structurally integrated with the OLED array and sensing elements. This enhanced integration is achieved by fabricating an array of amorphous or nanocrystalline Si-based PDs, followed by fabrication of the OLED pixels in the gaps between these Si PDs.

Image quality analysis of a color LCD as well as a monochrome LCD using a Foveon color CMOS camera

NASA Astrophysics Data System (ADS)

Dallas, William J.; Roehrig, Hans; Krupinski, Elizabeth A.

2007-09-01

We have combined a CMOS color camera with special software to compose a multi-functional image-quality analysis instrument. It functions as a colorimeter as well as measuring modulation transfer functions (MTF) and noise power spectra (NPS). It is presently being expanded to examine fixed-pattern noise and temporal noise. The CMOS camera has 9 μm square pixels and a pixel matrix of 2268 x 1512 x 3. The camera uses a sensor that has co-located pixels for all three primary colors. We have imaged sections of both a color and a monochrome LCD monitor onto the camera sensor with LCD-pixel-size to camera-pixel-size ratios of both 12:1 and 17.6:1. When used as an imaging colorimeter, each camera pixel is calibrated to provide CIE color coordinates and tristimulus values. This capability permits the camera to simultaneously determine chromaticity in different locations on the LCD display. After the color calibration with a CS-200 colorimeter the color coordinates of the display's primaries determined from the camera's luminance response are very close to those found from the CS-200. Only the color coordinates of the display's white point were in error. For calculating the MTF a vertical or horizontal line is displayed on the monitor. The captured image is color-matrix preprocessed, Fourier transformed then post-processed. For NPS, a uniform image is displayed on the monitor. Again, the image is pre-processed, transformed and processed. Our measurements show that the horizontal MTF's of both displays have a larger negative slope than that of the vertical MTF's. This behavior indicates that the horizontal MTF's are poorer than the vertical MTF's. However the modulations at the Nyquist frequency seem lower for the color LCD than for the monochrome LCD. The spatial noise of the color display in both directions is larger than that of the monochrome display. Attempts were also made to analyze the total noise in terms of spatial and temporal noise by applying subtractions of images taken at exactly the same exposure. Temporal noise seems to be significantly lower than spatial noise.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Photodiode area effect on performance of X-ray CMOS active pixel sensors

NASA Astrophysics Data System (ADS)

Kim, M. S.; Kim, Y.; Kim, G.; Lim, K. T.; Cho, G.; Kim, D.

2018-02-01

Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 μm2, the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 μm is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 μm or less.

First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size

NASA Astrophysics Data System (ADS)

Zaťko, B.; Kubanda, D.; Žemlička, J.; Šagátová, A.; Zápražný, Z.; Boháček, P.; Nečas, V.; Mora, Y.; Pichotka, M.; Dudák, J.

2018-02-01

In this work, we have focused on Timepix detectors coupled with the semi-insulating GaAs material sensor. We used undoped bulk GaAs material with the thickness of 350 μm. We prepared and tested four pixelated detectors with 165 μm and 220 μm pixel size with two versions of technology preparation, without and with wet chemically etched trenches around each pixel. We have carried out adjustment of GaAs Timepix detectors to optimize their performance. The energy calibration of one GaAs Timepix detector in Time-over-threshold mode was performed with the use of 241Am and 133Ba radioisotopes. We were able to detect γ-photons with the energy up to 160 keV. The X-ray imaging quality of GaAs Timepix detector was tested with X-ray source using various samples. After flat field we obtained very promising imaging performance of tested GaAs Timepix detectors.

Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

NASA Astrophysics Data System (ADS)

Fu, Y.; Hu-Guo, C.; Dorokhov, A.; Pham, H.; Hu, Y.

2013-07-01

In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80 μm×16 μm was fabricated in a 0.18 μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors.

A time-resolved image sensor for tubeless streak cameras

NASA Astrophysics Data System (ADS)

Yasutomi, Keita; Han, SangMan; Seo, Min-Woong; Takasawa, Taishi; Kagawa, Keiichiro; Kawahito, Shoji

2014-03-01

This paper presents a time-resolved CMOS image sensor with draining-only modulation (DOM) pixels for tube-less streak cameras. Although the conventional streak camera has high time resolution, the device requires high voltage and bulky system due to the structure with a vacuum tube. The proposed time-resolved imager with a simple optics realize a streak camera without any vacuum tubes. The proposed image sensor has DOM pixels, a delay-based pulse generator, and a readout circuitry. The delay-based pulse generator in combination with an in-pixel logic allows us to create and to provide a short gating clock to the pixel array. A prototype time-resolved CMOS image sensor with the proposed pixel is designed and implemented using 0.11um CMOS image sensor technology. The image array has 30(Vertical) x 128(Memory length) pixels with the pixel pitch of 22.4um. .

A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening.

PubMed

Chi, Taiyun; Park, Jong Seok; Butts, Jessica C; Hookway, Tracy A; Su, Amy; Zhu, Chengjie; Styczynski, Mark P; McDevitt, Todd C; Wang, Hua

2015-12-01

In this paper, we present a fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring. The sensor array consists of nine parallel pixel groups and nine corresponding signal conditioning blocks. Each pixel group comprises one temperature sensor and 16 tri-modality sensor pixels, while each tri-modality sensor pixel can be independently configured for extracellular voltage recording, cellular impedance measurement (voltage excitation/current sensing), and optical detection. This sensor array supports multi-modality cellular sensing at the pixel level, which enables holistic cell characterization and joint-modality physiological monitoring on the same cellular sample with a pixel resolution of 80 μm × 100 μm. Comprehensive biological experiments with different living cell samples demonstrate the functionality and benefit of the proposed multi-modality sensing in cell-based assay and drug screening.

Microlens performance limits in sub-2mum pixel CMOS image sensors.

PubMed

Huo, Yijie; Fesenmaier, Christian C; Catrysse, Peter B

2010-03-15

CMOS image sensors with smaller pixels are expected to enable digital imaging systems with better resolution. When pixel size scales below 2 mum, however, diffraction affects the optical performance of the pixel and its microlens, in particular. We present a first-principles electromagnetic analysis of microlens behavior during the lateral scaling of CMOS image sensor pixels. We establish for a three-metal-layer pixel that diffraction prevents the microlens from acting as a focusing element when pixels become smaller than 1.4 microm. This severely degrades performance for on and off-axis pixels in red, green and blue color channels. We predict that one-metal-layer or backside-illuminated pixels are required to extend the functionality of microlenses beyond the 1.4 microm pixel node.

Hot pixel generation in active pixel sensors: dosimetric and micro-dosimetric response

NASA Technical Reports Server (NTRS)

Scheick, Leif; Novak, Frank

2003-01-01

The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.

Design, optimization and evaluation of a "smart" pixel sensor array for low-dose digital radiography

NASA Astrophysics Data System (ADS)

Wang, Kai; Liu, Xinghui; Ou, Hai; Chen, Jun

2016-04-01

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. "Smart" pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.

CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

1996-01-01

The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

CMOS foveal image sensor chip

NASA Technical Reports Server (NTRS)

Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Bandera, Cesar (Inventor); Xia, Shu (Inventor)

2002-01-01

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

Method and apparatus of high dynamic range image sensor with individual pixel reset

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric R. (Inventor)

2001-01-01

A wide dynamic range image sensor provides individual pixel reset to vary the integration time of individual pixels. The integration time of each pixel is controlled by column and row reset control signals which activate a logical reset transistor only when both signals coincide for a given pixel.

Joint spatial-spectral hyperspectral image clustering using block-diagonal amplified affinity matrix

NASA Astrophysics Data System (ADS)

Fan, Lei; Messinger, David W.

2018-03-01

The large number of spectral channels in a hyperspectral image (HSI) produces a fine spectral resolution to differentiate between materials in a scene. However, difficult classes that have similar spectral signatures are often confused while merely exploiting information in the spectral domain. Therefore, in addition to spectral characteristics, the spatial relationships inherent in HSIs should also be considered for incorporation into classifiers. The growing availability of high spectral and spatial resolution of remote sensors provides rich information for image clustering. Besides the discriminating power in the rich spectrum, contextual information can be extracted from the spatial domain, such as the size and the shape of the structure to which one pixel belongs. In recent years, spectral clustering has gained popularity compared to other clustering methods due to the difficulty of accurate statistical modeling of data in high dimensional space. The joint spatial-spectral information could be effectively incorporated into the proximity graph for spectral clustering approach, which provides a better data representation by discovering the inherent lower dimensionality from the input space. We embedded both spectral and spatial information into our proposed local density adaptive affinity matrix, which is able to handle multiscale data by automatically selecting the scale of analysis for every pixel according to its neighborhood of the correlated pixels. Furthermore, we explored the "conductivity method," which aims at amplifying the block diagonal structure of the affinity matrix to further improve the performance of spectral clustering on HSI datasets.

High-voltage pixel sensors for ATLAS upgrade

NASA Astrophysics Data System (ADS)

Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

2014-11-01

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

Development of n-in-p pixel modules for the ATLAS upgrade at HL-LHC

NASA Astrophysics Data System (ADS)

Macchiolo, A.; Nisius, R.; Savic, N.; Terzo, S.

2016-09-01

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 μm thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of 14 ×1015 neq /cm2 . The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50×50 and 25×100 μm2) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50×50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80°) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.

CMOS Active Pixel Sensor Technology and Reliability Characterization Methodology

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Pain, Bedabrata; Kayaii, Sammy

2006-01-01

This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE PAGES

An, Mangmang; Chen, Chufeng; Gao, Chaosong; ...

2015-12-12

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

A low-noise CMOS pixel direct charge sensor, Topmetal-II-

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Mangmang; Chen, Chufeng; Gao, Chaosong

In this paper, we report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35 μm CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e - analog noisemore » and a 200e - minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. Lastly, these characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.« less

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Method of fabrication of display pixels driven by silicon thin film transistors

DOEpatents

Carey, Paul G.; Smith, Patrick M.

1999-01-01

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

A Chip and Pixel Qualification Methodology on Imaging Sensors

NASA Technical Reports Server (NTRS)

Chen, Yuan; Guertin, Steven M.; Petkov, Mihail; Nguyen, Duc N.; Novak, Frank

2004-01-01

This paper presents a qualification methodology on imaging sensors. In addition to overall chip reliability characterization based on sensor s overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity, Fixed Pattern Noise and Photon Response Non-Uniformity, a simulation technique is proposed and used to project pixel reliability. The projected pixel reliability is directly related to imaging quality and provides additional sensor reliability information and performance control.

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

DOE PAGES

Bubna, M.; Bolla, G.; Bortoletto, D.; ...

2015-08-03

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have beenmore » fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

A 100 Mfps image sensor for biological applications

NASA Astrophysics Data System (ADS)

Etoh, T. Goji; Shimonomura, Kazuhiro; Nguyen, Anh Quang; Takehara, Kosei; Kamakura, Yoshinari; Goetschalckx, Paul; Haspeslagh, Luc; De Moor, Piet; Dao, Vu Truong Son; Nguyen, Hoang Dung; Hayashi, Naoki; Mitsui, Yo; Inumaru, Hideo

2018-02-01

Two ultrahigh-speed CCD image sensors with different characteristics were fabricated for applications to advanced scientific measurement apparatuses. The sensors are BSI MCG (Backside-illuminated Multi-Collection-Gate) image sensors with multiple collection gates around the center of the front side of each pixel, placed like petals of a flower. One has five collection gates and one drain gate at the center, which can capture consecutive five frames at 100 Mfps with the pixel count of about 600 kpixels (512 x 576 x 2 pixels). In-pixel signal accumulation is possible for repetitive image capture of reproducible events. The target application is FLIM. The other is equipped with four collection gates each connected to an in-situ CCD memory with 305 elements, which enables capture of 1,220 (4 x 305) consecutive images at 50 Mfps. The CCD memory is folded and looped with the first element connected to the last element, which also makes possible the in-pixel signal accumulation. The sensor is a small test sensor with 32 x 32 pixels. The target applications are imaging TOF MS, pulse neutron tomography and dynamic PSP. The paper also briefly explains an expression of the temporal resolution of silicon image sensors theoretically derived by the authors in 2017. It is shown that the image sensor designed based on the theoretical analysis achieves imaging of consecutive frames at the frame interval of 50 ps.

Log polar image sensor in CMOS technology

NASA Astrophysics Data System (ADS)

Scheffer, Danny; Dierickx, Bart; Pardo, Fernando; Vlummens, Jan; Meynants, Guy; Hermans, Lou

1996-08-01

We report on the design, design issues, fabrication and performance of a log-polar CMOS image sensor. The sensor is developed for the use in a videophone system for deaf and hearing impaired people, who are not capable of communicating through a 'normal' telephone. The system allows 15 detailed images per second to be transmitted over existing telephone lines. This framerate is sufficient for conversations by means of sign language or lip reading. The pixel array of the sensor consists of 76 concentric circles with (up to) 128 pixels per circle, in total 8013 pixels. The interior pixels have a pitch of 14 micrometers, up to 250 micrometers at the border. The 8013-pixels image is mapped (log-polar transformation) in a X-Y addressable 76 by 128 array.

Is flat fielding safe for precision CCD astronomy?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Is flat fielding safe for precision CCD astronomy?

DOE PAGES

Baumer, Michael; Davis, Christopher P.; Roodman, Aaron

2017-07-06

The ambitious goals of precision cosmology with wide-field optical surveys such as the Dark Energy Survey (DES) and the Large Synoptic Survey Telescope (LSST) demand precision CCD astronomy as their foundation. This in turn requires an understanding of previously uncharacterized sources of systematic error in CCD sensors, many of which manifest themselves as static effective variations in pixel area. Such variation renders a critical assumption behind the traditional procedure of flat fielding—that a sensor's pixels comprise a uniform grid—invalid. In this work, we present a method to infer a curl-free model of a sensor's underlying pixel grid from flat-field images,more » incorporating the superposition of all electrostatic sensor effects—both known and unknown—present in flat-field data. We use these pixel grid models to estimate the overall impact of sensor systematics on photometry, astrometry, and PSF shape measurements in a representative sensor from the Dark Energy Camera (DECam) and a prototype LSST sensor. Applying the method to DECam data recovers known significant sensor effects for which corrections are currently being developed within DES. For an LSST prototype CCD with pixel-response non-uniformity (PRNU) of 0.4%, we find the impact of "improper" flat fielding on these observables is negligible in nominal .7'' seeing conditions. Furthermore, these errors scale linearly with the PRNU, so for future LSST production sensors, which may have larger PRNU, our method provides a way to assess whether pixel-level calibration beyond flat fielding will be required.« less

Performance evaluation of an architecture for the characterisation of photo-devices: design, fabrication and test on a CMOS technology

NASA Astrophysics Data System (ADS)

Castillo-Cabrera, G.; García-Lamont, J.; Reyes-Barranca, M. A.; Moreno-Cadenas, J. A.; Escobosa-Echavarría, A.

2011-03-01

In this report, the performance of a particular pixel's architecture is evaluated. It consists mainly of an optical sensor coupled to an amplifier. The circuit contains photoreceptors such as phototransistors and photodiodes. The circuit integrates two main blocks: (a) the pixel architecture, containing four p-channel transistors and a photoreceptor, and (b) a current source for biasing the signal conditioning amplifier. The generated photocurrent is integrated through the gate capacitance of the input p-channel MOS transistor, then converted to voltage and amplified. Both input transistor and current source are implemented as a voltage amplifier having variable gain (between 10dB and 32dB). Considering characterisation purposes, this last fact is relevant since it gives a degree of freedom to the measurement of different kinds of photo-devices and is not limited to either a single operating point of the circuit or one kind and size of photo-sensor. The gain of the amplifier can be adjusted with an external DC power supply that also sets the DC quiescent point of the circuit. Design of the row-select transistor's aspect ratio used in the matrix array is critical for the pixel's amplifier performance. Based on circuit design data such as capacitance magnitude, time and voltage integration, and amplifier gain, characterisation of all the architecture can be readily carried out and evaluated. For the specific technology used in this work, the spectral response of photo-sensors reveals performance differences between phototransistors and photodiodes. Good approximation between simulation and measurement was obtained.

Fully depleted CMOS pixel sensor development and potential applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudot, J.; Kachel, M.; CNRS, UMR7178, 67037 Strasbourg

CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) highmore » resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a low noise figure. Especially, an energy resolution of about 400 eV for 5 keV X-rays was obtained for single pixels. The prototypes have then been exposed to gradually increased fluences of neutrons, from 10{sup 13} to 5x10{sup 14} neq/cm{sup 2}. Again laboratory tests allowed to evaluate the signal over noise persistence on the different pixels implemented. Currently our development mostly targets the detection of soft X-rays, with the ambition to develop a pixel sensor matching counting rates as affordable with hybrid pixel sensors, but with an extended sensitivity to low energy and finer pixel about 25 x 25 μm{sup 2}. The original readout architecture proposed relies on a two tiers chip. The first tier consists of a sensor with a modest dynamic in order to insure low noise performances required by sensitivity. The interconnected second tier chip enhances the read-out speed by introducing massive parallelization. Performances reachable with this strategy combining counting and integration will be detailed. (authors)« less

Development of N+ in P pixel sensors for a high-luminosity large hadron collider

NASA Astrophysics Data System (ADS)

Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

2014-11-01

Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

Preliminary investigations of active pixel sensors in Nuclear Medicine imaging

NASA Astrophysics Data System (ADS)

Ott, Robert; Evans, Noel; Evans, Phil; Osmond, J.; Clark, A.; Turchetta, R.

2009-06-01

Three CMOS active pixel sensors have been investigated for their application to Nuclear Medicine imaging. Startracker with 525×525 25 μm square pixels has been coupled via a fibre optic stud to a 2 mm thick segmented CsI(Tl) crystal. Imaging tests were performed using 99mTc sources, which emit 140 keV gamma rays. The system was interfaced to a PC via FPGA-based DAQ and optical link enabling imaging rates of 10 f/s. System noise was measured to be >100e and it was shown that the majority of this noise was fixed pattern in nature. The intrinsic spatial resolution was measured to be ˜80 μm and the system spatial resolution measured with a slit was ˜450 μm. The second sensor, On Pixel Intelligent CMOS (OPIC), had 64×72 40 μm pixels and was used to evaluate noise characteristics and to develop a method of differentiation between fixed pattern and statistical noise. The third sensor, Vanilla, had 520×520 25 μm pixels and a measured system noise of ˜25e. This sensor was coupled directly to the segmented phosphor. Imaging results show that even at this lower level of noise the signal from 140 keV gamma rays is small as the light from the phosphor is spread over a large number of pixels. Suggestions for the 'ideal' sensor are made.

New results on diamond pixel sensors using ATLAS frontend electronics

NASA Astrophysics Data System (ADS)

Keil, M.; Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; Doucet, M.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Kania, D.; Gan, K. K.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Riester, J. L.; Roe, S.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Trischuk, W.; Tromson, D.; Vittone, E.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

2003-03-01

Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

FPGA-based real time controller for high order correction in EDIFISE

NASA Astrophysics Data System (ADS)

Rodríguez-Ramos, L. F.; Chulani, H.; Martín, Y.; Dorta, T.; Alonso, A.; Fuensalida, J. J.

2012-07-01

EDIFISE is a technology demonstrator instrument developed at the Institute of Astrophysics of the Canary Islands (IAC), intended to explore the feasibility of combining Adaptive Optics with attenuated optical fibers in order to obtain high spatial resolution spectra at the surroundings of a star, as an alternative to coronagraphy. A simplified version with only tip tilt correction has been tested at the OGS telescope in Observatorio del Teide (Canary islands, Spain) and a complete version is intended to be tested at the OGS and at the WHT telescope in Observatorio del Roque de los Muchachos, (Canary Islands, Spain). This paper describes the FPGA-based real time control of the High Order unit, responsible of the computation of the actuation values of a 97-actuactor deformable mirror (11x11) with the information provided by a configurable wavefront sensor of up to 16x16 subpupils at 500 Hz (128x128 pixels). The reconfigurable logic hardware will allow both zonal and modal control approaches, will full access to select which mode loops should be closed and with a number of utilities for influence matrix and open loop response measurements. The system has been designed in a modular way to allow for easy upgrade to faster frame rates (1500 Hz) and bigger wavefront sensors (240x240 pixels), accepting also several interfaces from the WFS and towards the mirror driver. The FPGA-based (Field Programmable Gate Array) real time controller provides bias and flat-fielding corrections, subpupil slopes to modal matrix computation for up to 97 modes, independent servo loop controllers for each mode with user control for independent loop opening or closing, mode to actuator matrix computation and non-common path aberration correction capability. It also provides full housekeeping control via UPD/IP for matrix reloading and full system data logging.

Small pixel cross-talk MTF and its impact on MWIR sensor performance

NASA Astrophysics Data System (ADS)

Goss, Tristan M.; Willers, Cornelius J.

2017-05-01

As pixel sizes reduce in the development of modern High Definition (HD) Mid Wave Infrared (MWIR) detectors the interpixel cross-talk becomes increasingly difficult to regulate. The diffusion lengths required to achieve the quantum efficiency and sensitivity of MWIR detectors are typically longer than the pixel pitch dimension, and the probability of inter-pixel cross-talk increases as the pixel pitch/diffusion length fraction decreases. Inter-pixel cross-talk is most conveniently quantified by the focal plane array sampling Modulation Transfer Function (MTF). Cross-talk MTF will reduce the ideal sinc square pixel MTF that is commonly used when modelling sensor performance. However, cross-talk MTF data is not always readily available from detector suppliers, and since the origins of inter-pixel cross-talk are uniquely device and manufacturing process specific, no generic MTF models appear to satisfy the needs of the sensor designers and analysts. In this paper cross-talk MTF data has been collected from recent publications and the development for a generic cross-talk MTF model to fit this data is investigated. The resulting cross-talk MTF model is then included in a MWIR sensor model and the impact on sensor performance is evaluated in terms of the National Imagery Interoperability Rating Scale's (NIIRS) General Image Quality Equation (GIQE) metric for a range of fnumber/ detector pitch Fλ/d configurations and operating environments. By applying non-linear boost transfer functions in the signal processing chain, the contrast losses due to cross-talk may be compensated for. Boost transfer functions, however, also reduce the signal to noise ratio of the sensor. In this paper boost function limits are investigated and included in the sensor performance assessments.

Mapping Capacitive Coupling Among Pixels in a Sensor Array

NASA Technical Reports Server (NTRS)

Seshadri, Suresh; Cole, David M.; Smith, Roger M.

2010-01-01

An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.

Subpixel mapping and test beam studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS inner detector upgrade

NASA Astrophysics Data System (ADS)

Bisanz, T.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.

2017-08-01

The upgrade to the High Luminosity Large Hadron Collider will increase the instantaneous luminosity by more than a factor of 5, thus creating significant challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives to the well-established hybrid design using passive sensors since they allow for smaller pixel sizes and cost effective production. This article presents studies of a high-voltage CMOS active pixel sensor designed for the ATLAS tracker upgrade. The sensor is glued to the read-out chip of the Insertable B-Layer, forming a capacitively coupled pixel detector. The pixel pitch of the device under test is 33× 125 μm2, while the pixels of the read-out chip have a pitch of 50× 250 μm2. Three pixels of the CMOS device are connected to one read-out pixel, the information of which of these subpixels is hit is encoded in the amplitude of the output signal (subpixel encoding). Test beam measurements are presented that demonstrate the usability of this subpixel encoding scheme.

Experimental single-chip color HDTV image acquisition system with 8M-pixel CMOS image sensor

NASA Astrophysics Data System (ADS)

Shimamoto, Hiroshi; Yamashita, Takayuki; Funatsu, Ryohei; Mitani, Kohji; Nojiri, Yuji

2006-02-01

We have developed an experimental single-chip color HDTV image acquisition system using 8M-pixel CMOS image sensor. The sensor has 3840 × 2160 effective pixels and is progressively scanned at 60 frames per second. We describe the color filter array and interpolation method to improve image quality with a high-pixel-count single-chip sensor. We also describe an experimental image acquisition system we used to measured spatial frequency characteristics in the horizontal direction. The results indicate good prospects for achieving a high quality single chip HDTV camera that reduces pseudo signals and maintains high spatial frequency characteristics within the frequency band for HDTV.

Active pixel sensors with substantially planarized color filtering elements

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

1999-01-01

A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

CMOS image sensor with lateral electric field modulation pixels for fluorescence lifetime imaging with sub-nanosecond time response

NASA Astrophysics Data System (ADS)

Li, Zhuo; Seo, Min-Woong; Kagawa, Keiichiro; Yasutomi, Keita; Kawahito, Shoji

2016-04-01

This paper presents the design and implementation of a time-resolved CMOS image sensor with a high-speed lateral electric field modulation (LEFM) gating structure for time domain fluorescence lifetime measurement. Time-windowed signal charge can be transferred from a pinned photodiode (PPD) to a pinned storage diode (PSD) by turning on a pair of transfer gates, which are situated beside the channel. Unwanted signal charge can be drained from the PPD to the drain by turning on another pair of gates. The pixel array contains 512 (V) × 310 (H) pixels with 5.6 × 5.6 µm2 pixel size. The imager chip was fabricated using 0.11 µm CMOS image sensor process technology. The prototype sensor has a time response of 150 ps at 374 nm. The fill factor of the pixels is 5.6%. The usefulness of the prototype sensor is demonstrated for fluorescence lifetime imaging through simulation and measurement results.

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

TFT-Directed Electroplating of RGB Luminescent Films without a Vacuum or Mask toward a Full-Color AMOLED Pixel Matrix.

PubMed

Wang, Rong; Zhang, Donglian; Xiong, You; Zhou, Xuehong; Liu, Cao; Chen, Weifeng; Wu, Weijing; Zhou, Lei; Xu, Miao; Wang, Lei; Liu, Linlin; Peng, Junbiao; Ma, Yuguang; Cao, Yong

2018-05-30

The thin-film transistor (TFT) driving circuit is a separate electronic component embedded within the panel itself to switch the current for each pixel in active-matrix organic light-emitting diode displays. We reported a TFT-directed dye electroplating method to fabricate pixels; this would be a new method to deposit films on prepatterned electrode for organic full-color display, where TFT driving circuit provide a switching current signal to drive and direct dye depositing on selected RGB pixels. A prototype patterned color pixel matrix was achieved, as high-quality light-emitting films with uniform morphology, pure RGB chromaticity, and stable output.

High resistivity CMOS pixel sensors and their application to the STAR PXL detector

NASA Astrophysics Data System (ADS)

Dorokhov, A.; Bertolone, G.; Baudot, J.; Colledani, C.; Claus, G.; Degerli, Y.; de Masi, R.; Deveaux, M.; Dozière, G.; Dulinski, W.; Gélin, M.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.; Voutsinas, G.; Winter, M.

2011-09-01

CMOS pixel sensors are foreseen to equip the vertex detector (called PXL) of the upgraded inner tracking system of the STAR experiment at RHIC. The sensors (called ULTIMATE) are being designed and their architecture is being optimized for the PXL specifications, extrapolating from the MIMOSA-26 sensor realized for the EUDET beam telescope.The paper gives an overview of the ULTIMATE sensor specifications and of the adaptation of its forerunner, MIMOSA-26, to the PXL specifications.One of the main changes between MIMOSA-26 and ULTIMATE is the use of a high resistivity epitaxial layer. Recent performance assessments obtained with MIMOSA-26 sensors manufactured on such an epitaxial layer are presented, as well as results of beam tests obtained with a prototype probing improved versions of the MIMOSA-26 pixel design. They show drastic improvements of the pixel signal-to-noise ratio and of the sensor radiation tolerance with respect to the performances achieved with a standard, i.e. low resistivity, layer.

On Certain New Methodology for Reducing Sensor and Readout Electronics Circuitry Noise in Digital Domain

NASA Technical Reports Server (NTRS)

Kizhner, Semion; Miko, Joseph; Bradley, Damon; Heinzen, Katherine

2008-01-01

NASA Hubble Space Telescope (HST) and upcoming cosmology science missions carry instruments with multiple focal planes populated with many large sensor detector arrays. These sensors are passively cooled to low temperatures for low-level light (L3) and near-infrared (NIR) signal detection, and the sensor readout electronics circuitry must perform at extremely low noise levels to enable new required science measurements. Because we are at the technological edge of enhanced performance for sensors and readout electronics circuitry, as determined by thermal noise level at given temperature in analog domain, we must find new ways of further compensating for the noise in the signal digital domain. To facilitate this new approach, state-of-the-art sensors are augmented at their array hardware boundaries by non-illuminated reference pixels, which can be used to reduce noise attributed to sensors. There are a few proposed methodologies of processing in the digital domain the information carried by reference pixels, as employed by the Hubble Space Telescope and the James Webb Space Telescope Projects. These methods involve using spatial and temporal statistical parameters derived from boundary reference pixel information to enhance the active (non-reference) pixel signals. To make a step beyond this heritage methodology, we apply the NASA-developed technology known as the Hilbert- Huang Transform Data Processing System (HHT-DPS) for reference pixel information processing and its utilization in reconfigurable hardware on-board a spaceflight instrument or post-processing on the ground. The methodology examines signal processing for a 2-D domain, in which high-variance components of the thermal noise are carried by both active and reference pixels, similar to that in processing of low-voltage differential signals and subtraction of a single analog reference pixel from all active pixels on the sensor. Heritage methods using the aforementioned statistical parameters in the digital domain (such as statistical averaging of the reference pixels themselves) zeroes out the high-variance components, and the counterpart components in the active pixels remain uncorrected. This paper describes how the new methodology was demonstrated through analysis of fast-varying noise components using the Hilbert-Huang Transform Data Processing System tool (HHT-DPS) developed at NASA and the high-level programming language MATLAB (Trademark of MathWorks Inc.), as well as alternative methods for correcting for the high-variance noise component, using an HgCdTe sensor data. The NASA Hubble Space Telescope data post-processing, as well as future deep-space cosmology projects on-board instrument data processing from all the sensor channels, would benefit from this effort.

MTF evaluation of white pixel sensors

NASA Astrophysics Data System (ADS)

Lindner, Albrecht; Atanassov, Kalin; Luo, Jiafu; Goma, Sergio

2015-01-01

We present a methodology to compare image sensors with traditional Bayer RGB layouts to sensors with alternative layouts containing white pixels. We focused on the sensors' resolving powers, which we measured in the form of a modulation transfer function for variations in both luma and chroma channels. We present the design of the test chart, the acquisition of images, the image analysis, and an interpretation of results. We demonstrate the approach at the example of two sensors that only differ in their color filter arrays. We confirmed that the sensor with white pixels and the corresponding demosaicing result in a higher resolving power in the luma channel, but a lower resolving power in the chroma channels when compared to the traditional Bayer sensor.

Pixel super resolution using wavelength scanning

DTIC Science & Technology

2016-04-08

the light source is adjusted to ~20 μW. The image sensor chip is a color CMOS sensor chip with a pixel size of 1.12 μm manufactured for cellphone...pitch (that is, ~ 1 μm in Figure 3a, using a CMOS sensor that has a 1.12-μm pixel pitch). For the same configuration depicted in Figure 3, utilizing...section). The a Lens-free raw holograms captured by 1.12 μm CMOS image sensor Field of view ≈ 20.5 mm2 Angle change directions for synthetic aperture

Median filters as a tool to determine dark noise thresholds in high resolution smartphone image sensors for scientific imaging

NASA Astrophysics Data System (ADS)

Igoe, Damien P.; Parisi, Alfio V.; Amar, Abdurazaq; Rummenie, Katherine J.

2018-01-01

An evaluation of the use of median filters in the reduction of dark noise in smartphone high resolution image sensors is presented. The Sony Xperia Z1 employed has a maximum image sensor resolution of 20.7 Mpixels, with each pixel having a side length of just over 1 μm. Due to the large number of photosites, this provides an image sensor with very high sensitivity but also makes them prone to noise effects such as hot-pixels. Similar to earlier research with older models of smartphone, no appreciable temperature effects were observed in the overall average pixel values for images taken in ambient temperatures between 5 °C and 25 °C. In this research, hot-pixels are defined as pixels with intensities above a specific threshold. The threshold is determined using the distribution of pixel values of a set of images with uniform statistical properties associated with the application of median-filters of increasing size. An image with uniform statistics was employed as a training set from 124 dark images, and the threshold was determined to be 9 digital numbers (DN). The threshold remained constant for multiple resolutions and did not appreciably change even after a year of extensive field use and exposure to solar ultraviolet radiation. Although the temperature effects' uniformity masked an increase in hot-pixel occurrences, the total number of occurrences represented less than 0.1% of the total image. Hot-pixels were removed by applying a median filter, with an optimum filter size of 7 × 7; similar trends were observed for four additional smartphone image sensors used for validation. Hot-pixels were also reduced by decreasing image resolution. The method outlined in this research provides a methodology to characterise the dark noise behavior of high resolution image sensors for use in scientific investigations, especially as pixel sizes decrease.

CMOS Image Sensors: Electronic Camera On A Chip

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame,more » in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.« less

The analysis and rationale behind the upgrading of existing standard definition thermal imagers to high definition

NASA Astrophysics Data System (ADS)

Goss, Tristan M.

2016-05-01

With 640x512 pixel format IR detector arrays having been on the market for the past decade, Standard Definition (SD) thermal imaging sensors have been developed and deployed across the world. Now with 1280x1024 pixel format IR detector arrays becoming readily available designers of thermal imager systems face new challenges as pixel sizes reduce and the demand and applications for High Definition (HD) thermal imaging sensors increases. In many instances the upgrading of existing under-sampled SD thermal imaging sensors into more optimally sampled or oversampled HD thermal imaging sensors provides a more cost effective and reduced time to market option than to design and develop a completely new sensor. This paper presents the analysis and rationale behind the selection of the best suited HD pixel format MWIR detector for the upgrade of an existing SD thermal imaging sensor to a higher performing HD thermal imaging sensor. Several commercially available and "soon to be" commercially available HD small pixel IR detector options are included as part of the analysis and are considered for this upgrade. The impact the proposed detectors have on the sensor's overall sensitivity, noise and resolution is analyzed, and the improved range performance is predicted. Furthermore with reduced dark currents due to the smaller pixel sizes, the candidate HD MWIR detectors are operated at higher temperatures when compared to their SD predecessors. Therefore, as an additional constraint and as a design goal, the feasibility of achieving upgraded performance without any increase in the size, weight and power consumption of the thermal imager is discussed herein.

Spectral characterisation and noise performance of Vanilla—an active pixel sensor

NASA Astrophysics Data System (ADS)

Blue, Andrew; Bates, R.; Bohndiek, S. E.; Clark, A.; Arvanitis, Costas D.; Greenshaw, T.; Laing, A.; Maneuski, D.; Turchetta, R.; O'Shea, V.

2008-06-01

This work will report on the characterisation of a new active pixel sensor, Vanilla. The Vanilla comprises of 512×512 (25μm 2) pixels. The sensor has a 12 bit digital output for full-frame mode, although it can also be readout in analogue mode, whereby it can also be read in a fully programmable region-of-interest (ROI) mode. In full frame, the sensor can operate at a readout rate of more than 100 frames per second (fps), while in ROI mode, the speed depends on the size, shape and number of ROIs. For example, an ROI of 6×6 pixels can be read at 20,000 fps in analogue mode. Using photon transfer curve (PTC) measurements allowed for the calculation of the read noise, shot noise, full-well capacity and camera gain constant of the sensor. Spectral response measurements detailed the quantum efficiency (QE) of the detector through the UV and visible region. Analysis of the ROI readout mode was also performed. Such measurements suggest that the Vanilla APS (active pixel sensor) will be suitable for a wide range of applications including particle physics and medical imaging.

Center of mass detection via an active pixel sensor

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Minch, Brad (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric (Inventor)

2005-01-01

An imaging system for identifying the location of the center of mass (COM) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.

Center of mass detection via an active pixel sensor

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Minch, Brad (Inventor); Pain, Bedabrara (Inventor); Fossum, Eric (Inventor)

2006-01-01

An imaging system for identifying the location of the center of mass (COM) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.

Center of mass detection via an active pixel sensor

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Minch, Brad (Inventor); Pain, Bedabrata (Inventor); Fossum, Eric (Inventor)

2002-01-01

An imaging system for identifying the location of the center of mass (COM) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.

Noise characterization of a 512×16 spad line sensor for time-resolved spectroscopy applications

NASA Astrophysics Data System (ADS)

Finlayson, Neil; Usai, Andrea; Erdogan, Ahmet T.; Henderson, Robert K.

2018-02-01

Time-resolved spectroscopy in the presence of noise is challenging. We have developed a new 512 pixel line sensor with 16 single-photon-avalanche (SPAD) detectors per pixel and ultrafast in-pixel time-correlated single photon counting (TCSPC) histogramming for such applications. SPADs are near shot noise limited detectors but we are still faced with the problem of high dark count rate (DCR) SPADs. The noisiest SPADs can be switched off to optimise signal-to-noiseratios (SNR) at the expense of longer acquisition/exposure times than would be possible if more SPADs were exploited. Here we present detailed noise characterization of our array. We build a DCR map for the sensor and demonstrate the effect of switching off the noisiest SPADs in each pixel. 24% percent of SPADs in the array are measured to have DCR in excess of 1kHz, while the best SPAD selection per pixel reduces DCR to 53+/-7Hz across the entire array. We demonstrate that selection of the lowest DCR SPAD in each pixel leads to the emergence of sparse spatial sampling noise in the sensor.

Spectral Analysis of the Primary Flight Focal Plane Arrays for the Thermal Infrared Sensor

NASA Technical Reports Server (NTRS)

Montanaro, Matthew; Reuter, Dennis C.; Markham, Brian L.; Thome, Kurtis J.; Lunsford, Allen W.; Jhabvala, Murzy D.; Rohrbach, Scott O.; Gerace, Aaron D.

2011-01-01

Thermal Infrared Sensor (TIRS) is a (1) New longwave infrared (10 - 12 micron) sensor for the Landsat Data Continuity Mission, (2) 185 km ground swath; 100 meter pixel size on ground, (3) Pushbroom sensor configuration. Issue of Calibration are: (1) Single detector -- only one calibration, (2) Multiple detectors - unique calibration for each detector -- leads to pixel-to-pixel artifacts. Objectives are: (1) Predict extent of residual striping when viewing a uniform blackbody target through various atmospheres, (2) Determine how different spectral shapes affect the derived surface temperature in a realistic synthetic scene.

Estimating pixel variances in the scenes of staring sensors

DOEpatents

Simonson, Katherine M [Cedar Crest, NM; Ma, Tian J [Albuquerque, NM

2012-01-24

A technique for detecting changes in a scene perceived by a staring sensor is disclosed. The technique includes acquiring a reference image frame and a current image frame of a scene with the staring sensor. A raw difference frame is generated based upon differences between the reference image frame and the current image frame. Pixel error estimates are generated for each pixel in the raw difference frame based at least in part upon spatial error estimates related to spatial intensity gradients in the scene. The pixel error estimates are used to mitigate effects of camera jitter in the scene between the current image frame and the reference image frame.

Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Sheu, Bing J.; Venus, Holger; Sandau, Rainer

1997-01-01

A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.

A CMOS image sensor with programmable pixel-level analog processing.

PubMed

Massari, Nicola; Gottardi, Massimo; Gonzo, Lorenzo; Stoppa, David; Simoni, Andrea

2005-11-01

A prototype of a 34 x 34 pixel image sensor, implementing real-time analog image processing, is presented. Edge detection, motion detection, image amplification, and dynamic-range boosting are executed at pixel level by means of a highly interconnected pixel architecture based on the absolute value of the difference among neighbor pixels. The analog operations are performed over a kernel of 3 x 3 pixels. The square pixel, consisting of 30 transistors, has a pitch of 35 microm with a fill-factor of 20%. The chip was fabricated in a 0.35 microm CMOS technology, and its power consumption is 6 mW with 3.3 V power supply. The device was fully characterized and achieves a dynamic range of 50 dB with a light power density of 150 nW/mm2 and a frame rate of 30 frame/s. The measured fixed pattern noise corresponds to 1.1% of the saturation level. The sensor's dynamic range can be extended up to 96 dB using the double-sampling technique.

Photon small-field measurements with a CMOS active pixel sensor.

PubMed

Spang, F Jiménez; Rosenberg, I; Hedin, E; Royle, G

2015-06-07

In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm(2). The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

How Many Pixels Does It Take to Make a Good 4"×6" Print? Pixel Count Wars Revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

Digital still cameras emerged following the introduction of the Sony Mavica analog prototype camera in 1981. These early cameras produced poor image quality and did not challenge film cameras for overall quality. By 1995 digital still cameras in expensive SLR formats had 6 mega-pixels and produced high quality images (with significant image processing). In 2005 significant improvement in image quality was apparent and lower prices for digital still cameras (DSCs) started a rapid decline in film usage and film camera sells. By 2010 film usage was mostly limited to professionals and the motion picture industry. The rise of DSCs was marked by a “pixel war” where the driving feature of the cameras was the pixel count where even moderate cost, ˜120, DSCs would have 14 mega-pixels. The improvement of CMOS technology pushed this trend of lower prices and higher pixel counts. Only the single lens reflex cameras had large sensors and large pixels. The drive for smaller pixels hurt the quality aspects of the final image (sharpness, noise, speed, and exposure latitude). Only today are camera manufactures starting to reverse their course and producing DSCs with larger sensors and pixels. This paper will explore why larger pixels and sensors are key to the future of DSCs.

The effect of split pixel HDR image sensor technology on MTF measurements

NASA Astrophysics Data System (ADS)

Deegan, Brian M.

2014-03-01

Split-pixel HDR sensor technology is particularly advantageous in automotive applications, because the images are captured simultaneously rather than sequentially, thereby reducing motion blur. However, split pixel technology introduces artifacts in MTF measurement. To achieve a HDR image, raw images are captured from both large and small sub-pixels, and combined to make the HDR output. In some cases, a large sub-pixel is used for long exposure captures, and a small sub-pixel for short exposures, to extend the dynamic range. The relative size of the photosensitive area of the pixel (fill factor) plays a very significant role in the output MTF measurement. Given an identical scene, the MTF will be significantly different, depending on whether you use the large or small sub-pixels i.e. a smaller fill factor (e.g. in the short exposure sub-pixel) will result in higher MTF scores, but significantly greater aliasing. Simulations of split-pixel sensors revealed that, when raw images from both sub-pixels are combined, there is a significant difference in rising edge (i.e. black-to-white transition) and falling edge (white-to-black) reproduction. Experimental results showed a difference of ~50% in measured MTF50 between the falling and rising edges of a slanted edge test chart.

Wafer-scale pixelated detector system

DOEpatents

Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

2017-10-17

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

PubMed Central

Hirvonen, Liisa M.; Suhling, Klaus

2016-01-01

Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications. PMID:27136556

Characterization of the energy resolution and the tracking capabilities of a hybrid pixel detector with CdTe-sensor layer for a possible use in a neutrinoless double beta decay experiment

NASA Astrophysics Data System (ADS)

Filipenko, Mykhaylo; Gleixner, Thomas; Anton, Gisela; Durst, Jürgen; Michel, Thilo

2013-04-01

Many different experiments are being developed to explore the existence of the neutrinoless double beta decay (0 νββ) since it would imply fundamental consequences for particle physics. In this work we present results on the evaluation of Timepix detectors with cadmium-telluride sensor material to search for 0 νββ in 116Cd. This work was carried out with the COBRA collaboration and the Medipix collaboration. Due to the relatively small pixel dimension of 110×110×1000 μm3 the energy deposited by particles typically extends over several detector pixels leading to a track in the pixel matrix. We investigated the separation power regarding different event-types like α-particles, atmospheric muons, single electrons and electron-positron pairs produced at a single vertex. We achieved excellent classification power for α-particles and muons. In addition, we achieved good separation power between single electron and electron-positron pair production events. These separation abilities indicate a very good background reduction for the 0 νββ search. Further, in order to distinguish between 2 νββ and 0 νββ, the energy resolution is of particular importance. We carried out simulations which demonstrate that an energy resolution of 0.43 % is achievable at the Q-value for 0 νββ of 116Cd at 2.814 MeV. We measured an energy resolution of 1.6 % at a nominal energy of 1589 keV for electron-positron tracks which is about two times worse that predicted by our simulations. This deviation is probably due to the problem of detector calibration at energies above 122 keV which is discussed in this paper as well.

SiPM based readout system for PbWO4 crystals

NASA Astrophysics Data System (ADS)

Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

2013-08-01

Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20-100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process.

PubMed

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-12

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke - . Readout noise under the highest pixel gain condition is 1 e - with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7", 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process †

PubMed Central

Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

2018-01-01

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke−. Readout noise under the highest pixel gain condition is 1 e− with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7”, 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach. PMID:29329210

Monolithic Active Pixel Sensors

NASA Astrophysics Data System (ADS)

Lutz, P.

In close collaboration with the group from Strasbourg, Saclay has been developing fast monolithic active pixel sensors for future vertex detectors. This presentation gives some recent results from the MIMOSA serie, emphazising the participation of the group.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

NASA Astrophysics Data System (ADS)

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

2018-02-01

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1× 1014 and 5× 1015 1-MeV- neq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1× 1015 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

The Multidimensional Integrated Intelligent Imaging project (MI-3)

NASA Astrophysics Data System (ADS)

Allinson, N.; Anaxagoras, T.; Aveyard, J.; Arvanitis, C.; Bates, R.; Blue, A.; Bohndiek, S.; Cabello, J.; Chen, L.; Chen, S.; Clark, A.; Clayton, C.; Cook, E.; Cossins, A.; Crooks, J.; El-Gomati, M.; Evans, P. M.; Faruqi, W.; French, M.; Gow, J.; Greenshaw, T.; Greig, T.; Guerrini, N.; Harris, E. J.; Henderson, R.; Holland, A.; Jeyasundra, G.; Karadaglic, D.; Konstantinidis, A.; Liang, H. X.; Maini, K. M. S.; McMullen, G.; Olivo, A.; O'Shea, V.; Osmond, J.; Ott, R. J.; Prydderch, M.; Qiang, L.; Riley, G.; Royle, G.; Segneri, G.; Speller, R.; Symonds-Tayler, J. R. N.; Triger, S.; Turchetta, R.; Venanzi, C.; Wells, K.; Zha, X.; Zin, H.

2009-06-01

MI-3 is a consortium of 11 universities and research laboratories whose mission is to develop complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) and to apply these sensors to a range of imaging challenges. A range of sensors has been developed: On-Pixel Intelligent CMOS (OPIC)—designed for in-pixel intelligence; FPN—designed to develop novel techniques for reducing fixed pattern noise; HDR—designed to develop novel techniques for increasing dynamic range; Vanilla/PEAPS—with digital and analogue modes and regions of interest, which has also been back-thinned; Large Area Sensor (LAS)—a novel, stitched LAS; and eLeNA—which develops a range of low noise pixels. Applications being developed include autoradiography, a gamma camera system, radiotherapy verification, tissue diffraction imaging, X-ray phase-contrast imaging, DNA sequencing and electron microscopy.

Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

NASA Astrophysics Data System (ADS)

Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

2015-12-01

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

Cameras for digital microscopy.

PubMed

Spring, Kenneth R

2013-01-01

This chapter reviews the fundamental characteristics of charge-coupled devices (CCDs) and related detectors, outlines the relevant parameters for their use in microscopy, and considers promising recent developments in the technology of detectors. Electronic imaging with a CCD involves three stages--interaction of a photon with the photosensitive surface, storage of the liberated charge, and readout or measurement of the stored charge. The most demanding applications in fluorescence microscopy may require as much as four orders of greater magnitude sensitivity. The image in the present-day light microscope is usually acquired with a CCD camera. The CCD is composed of a large matrix of photosensitive elements (often referred to as "pixels" shorthand for picture elements, which simultaneously capture an image over the entire detector surface. The light-intensity information for each pixel is stored as electronic charge and is converted to an analog voltage by a readout amplifier. This analog voltage is subsequently converted to a numerical value by a digitizer situated on the CCD chip, or very close to it. Several (three to six) amplifiers are required for each pixel, and to date, uniform images with a homogeneous background have been a problem because of the inherent difficulties of balancing the gain in all of the amplifiers. Complementary metal oxide semiconductor sensors also exhibit relatively high noise associated with the requisite high-speed switching. Both of these deficiencies are being addressed, and sensor performance is nearing that required for scientific imaging. Copyright © 1998 Elsevier Inc. All rights reserved.

Nanowire active-matrix circuitry for low-voltage macroscale artificial skin.

PubMed

Takei, Kuniharu; Takahashi, Toshitake; Ho, Johnny C; Ko, Hyunhyub; Gillies, Andrew G; Leu, Paul W; Fearing, Ronald S; Javey, Ali

2010-10-01

Large-scale integration of high-performance electronic components on mechanically flexible substrates may enable new applications in electronics, sensing and energy. Over the past several years, tremendous progress in the printing and transfer of single-crystalline, inorganic micro- and nanostructures on plastic substrates has been achieved through various process schemes. For instance, contact printing of parallel arrays of semiconductor nanowires (NWs) has been explored as a versatile route to enable fabrication of high-performance, bendable transistors and sensors. However, truly macroscale integration of ordered NW circuitry has not yet been demonstrated, with the largest-scale active systems being of the order of 1 cm(2) (refs 11,15). This limitation is in part due to assembly- and processing-related obstacles, although larger-scale integration has been demonstrated for randomly oriented NWs (ref. 16). Driven by this challenge, here we demonstrate macroscale (7×7 cm(2)) integration of parallel NW arrays as the active-matrix backplane of a flexible pressure-sensor array (18×19 pixels). The integrated sensor array effectively functions as an artificial electronic skin, capable of monitoring applied pressure profiles with high spatial resolution. The active-matrix circuitry operates at a low operating voltage of less than 5 V and exhibits superb mechanical robustness and reliability, without performance degradation on bending to small radii of curvature (2.5 mm) for over 2,000 bending cycles. This work presents the largest integration of ordered NW-array active components, and demonstrates a model platform for future integration of nanomaterials for practical applications.

CMOS active pixel sensors response to low energy light ions

NASA Astrophysics Data System (ADS)

Spiriti, E.; Finck, Ch.; Baudot, J.; Divay, C.; Juliani, D.; Labalme, M.; Rousseau, M.; Salvador, S.; Vanstalle, M.; Agodi, C.; Cuttone, G.; De Napoli, M.; Romano, F.

2017-12-01

Recently CMOS active pixel sensors have been used in Hadrontherapy ions fragmentation cross section measurements. Their main goal is to reconstruct tracks generated by the non interacting primary ions or by the produced fragments. In this framework the sensors, unexpectedly, demonstrated the possibility to obtain also some informations that could contribute to the ion type identification. The present analysis shows a clear dependency in charge and number of pixels per cluster (pixels with a collected amount of charge above a given threshold) with both fragment atomic number Z and energy loss in the sensor. This information, in the FIRST (F ragmentation of I ons R elevant for S pace and T herapy) experiment, has been used in the overall particle identification analysis algorithm. The aim of this paper is to present the data analysis and the obtained results. An empirical model was developed, in this paper, that reproduce the cluster size as function of the deposited energy in the sensor.

High-speed imaging using CMOS image sensor with quasi pixel-wise exposure

NASA Astrophysics Data System (ADS)

Sonoda, T.; Nagahara, H.; Endo, K.; Sugiyama, Y.; Taniguchi, R.

2017-02-01

Several recent studies in compressive video sensing have realized scene capture beyond the fundamental trade-off limit between spatial resolution and temporal resolution using random space-time sampling. However, most of these studies showed results for higher frame rate video that were produced by simulation experiments or using an optically simulated random sampling camera, because there are currently no commercially available image sensors with random exposure or sampling capabilities. We fabricated a prototype complementary metal oxide semiconductor (CMOS) image sensor with quasi pixel-wise exposure timing that can realize nonuniform space-time sampling. The prototype sensor can reset exposures independently by columns and fix these amount of exposure by rows for each 8x8 pixel block. This CMOS sensor is not fully controllable via the pixels, and has line-dependent controls, but it offers flexibility when compared with regular CMOS or charge-coupled device sensors with global or rolling shutters. We propose a method to realize pseudo-random sampling for high-speed video acquisition that uses the flexibility of the CMOS sensor. We reconstruct the high-speed video sequence from the images produced by pseudo-random sampling using an over-complete dictionary.

A 7 ke-SD-FWC 1.2 e-RMS Temporal Random Noise 128×256 Time-Resolved CMOS Image Sensor With Two In-Pixel SDs for Biomedical Applications.

PubMed

Seo, Min-Woong; Kawahito, Shoji

2017-12-01

A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.2e-rms at 20 fps with true correlated double sampling operation and fast intrinsic response less than 500 ps at 635 nm. The proposed imager has an effective pixel array of and a pixel size of . The sensor chip is fabricated by Dongbu HiTek 1P4M 0.11 CIS process.

Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors

PubMed Central

Perenzoni, Matteo; Pancheri, Lucio; Stoppa, David

2016-01-01

This paper reviews the state of the art of single-photon avalanche diode (SPAD) image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 μm) and high fill factor (>20%) as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved. PMID:27223284

Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Hanagaki, K.; Yajima, K.; Yamauchi, Y.; Hirose, M.; Homma, Y.; Jinnouchi, O.; Kimura, K.; Motohashi, K.; Sato, S.; Sawai, H.; Todome, K.; Yamaguchi, D.; Hara, K.; Sato, Kz.; Sato, Kj.; Hagihara, M.; Iwabuchi, S.

2016-09-01

We have developed n+-in-p pixel sensors to obtain highly radiation tolerant sensors for extremely high radiation environments such as those found at the high-luminosity LHC. We have designed novel pixel structures to eliminate the sources of efficiency loss under the bias rails after irradiation by removing the bias rail out of the boundary region and routing the bias resistors inside the area of the pixel electrodes. After irradiation by protons with the fluence of approximately 3 ×1015neq /cm2, the pixel structure with the polysilicon bias resistor and the bias rails removed far away from the boundary shows an efficiency loss of < 0.5 % per pixel at the boundary region, which is as efficient as the pixel structure without a biasing structure. The pixel structure with the bias rails at the boundary and the widened p-stop's underneath the bias rail also exhibits an improved loss of approximately 1% per pixel at the boundary region. We have elucidated the physical mechanisms behind the efficiency loss under the bias rail with TCAD simulations. The efficiency loss is due to the interplay of the bias rail acting as a charge collecting electrode with the region of low electric field in the silicon near the surface at the boundary. The region acts as a "shield" for the electrode. After irradiation, the strong applied electric field nearly eliminates the region. The TCAD simulations have shown that wide p-stop and large Si-SiO2 interface charge (inversion layer, specifically) act to shield the weighting potential. The pixel sensor of the old design irradiated by γ-rays at 2.4 MGy is confirmed to exhibit only a slight efficiency loss at the boundary.

A sun-crown-sensor model and adapted C-correction logic for topographic correction of high resolution forest imagery

NASA Astrophysics Data System (ADS)

Fan, Yuanchao; Koukal, Tatjana; Weisberg, Peter J.

2014-10-01

Canopy shadowing mediated by topography is an important source of radiometric distortion on remote sensing images of rugged terrain. Topographic correction based on the sun-canopy-sensor (SCS) model significantly improved over those based on the sun-terrain-sensor (STS) model for surfaces with high forest canopy cover, because the SCS model considers and preserves the geotropic nature of trees. The SCS model accounts for sub-pixel canopy shadowing effects and normalizes the sunlit canopy area within a pixel. However, it does not account for mutual shadowing between neighboring pixels. Pixel-to-pixel shadowing is especially apparent for fine resolution satellite images in which individual tree crowns are resolved. This paper proposes a new topographic correction model: the sun-crown-sensor (SCnS) model based on high-resolution satellite imagery (IKONOS) and high-precision LiDAR digital elevation model. An improvement on the C-correction logic with a radiance partitioning method to address the effects of diffuse irradiance is also introduced (SCnS + C). In addition, we incorporate a weighting variable, based on pixel shadow fraction, on the direct and diffuse radiance portions to enhance the retrieval of at-sensor radiance and reflectance of highly shadowed tree pixels and form another variety of SCnS model (SCnS + W). Model evaluation with IKONOS test data showed that the new SCnS model outperformed the STS and SCS models in quantifying the correlation between terrain-regulated illumination factor and at-sensor radiance. Our adapted C-correction logic based on the sun-crown-sensor geometry and radiance partitioning better represented the general additive effects of diffuse radiation than C parameters derived from the STS or SCS models. The weighting factor Wt also significantly enhanced correction results by reducing within-class standard deviation and balancing the mean pixel radiance between sunlit and shaded slopes. We analyzed these improvements with model comparison on the red and near infrared bands. The advantages of SCnS + C and SCnS + W on both bands are expected to facilitate forest classification and change detection applications.

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

Development of pixellated Ir-TESs

NASA Astrophysics Data System (ADS)

Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Damayanthi, Rathnayaka M. T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

2006-04-01

We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μm×45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES.

Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade

NASA Astrophysics Data System (ADS)

Kim, D.; Aglieri Rinella, G.; Cavicchioli, C.; Chanlek, N.; Collu, A.; Degerli, Y.; Dorokhov, A.; Flouzat, C.; Gajanana, D.; Gao, C.; Guilloux, F.; Hillemanns, H.; Hristozkov, S.; Junique, A.; Keil, M.; Kofarago, M.; Kugathasan, T.; Kwon, Y.; Lattuca, A.; Mager, M.; Sielewicz, K. M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Pham, T. H.; Puggioni, C.; Reidt, F.; Riedler, P.; Rousset, J.; Siddhanta, S.; Snoeys, W.; Song, M.; Usai, G.; Van Hoorne, J. W.; Yang, P.

2016-02-01

ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m2 tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. First full-scale prototypes have been fabricated and tested. Radiation tolerance has also been verified. In this paper the development of the charge sensitive front end and in particular its optimization for uniformity of charge threshold and time response will be presented.

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Bio-Inspired Asynchronous Pixel Event Tricolor Vision Sensor.

PubMed

Lenero-Bardallo, Juan Antonio; Bryn, D H; Hafliger, Philipp

2014-06-01

This article investigates the potential of the first ever prototype of a vision sensor that combines tricolor stacked photo diodes with the bio-inspired asynchronous pixel event communication protocol known as Address Event Representation (AER). The stacked photo diodes are implemented in a 22 × 22 pixel array in a standard STM 90 nm CMOS process. Dynamic range is larger than 60 dB and pixels fill factor is 28%. The pixels employ either simple pulse frequency modulation (PFM) or a Time-to-First-Spike (TFS) mode. A heuristic linear combination of the chip's inherent pseudo colors serves to approximate RGB color representation. Furthermore, the sensor outputs can be processed to represent the radiation in the near infrared (NIR) band without employing external filters, and to color-encode direction of motion due to an asymmetry in the update rates of the different diode layers.

Transparent Fingerprint Sensor System for Large Flat Panel Display.

PubMed

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk; Lee, Myunghee

2018-01-19

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger's ridges and valleys through the fingerprint sensor array.

Transparent Fingerprint Sensor System for Large Flat Panel Display

PubMed Central

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk

2018-01-01

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger’s ridges and valleys through the fingerprint sensor array. PMID:29351218

Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Nichols, Jonathan A.

Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE PAGES

Benoit, M.; Braccini, S.; Casse, G.; ...

2018-02-08

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; Braccini, S.; Casse, G.

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4 th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1×10 14 and 5×10 15 1–MeV– n eq. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured atmore » the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1×10 15 neq—a relevant value for a large volume of the upgraded tracker—exhibited 99.7% average hit efficiency. Furthermore, the results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.« less

Commercial CMOS image sensors as X-ray imagers and particle beam monitors

NASA Astrophysics Data System (ADS)

Castoldi, A.; Guazzoni, C.; Maffessanti, S.; Montemurro, G. V.; Carraresi, L.

2015-01-01

CMOS image sensors are widely used in several applications such as mobile handsets webcams and digital cameras among others. Furthermore they are available across a wide range of resolutions with excellent spectral and chromatic responses. In order to fulfill the need of cheap systems as beam monitors and high resolution image sensors for scientific applications we exploited the possibility of using commercial CMOS image sensors as X-rays and proton detectors. Two different sensors have been mounted and tested. An Aptina MT9v034, featuring 752 × 480 pixels, 6μm × 6μm pixel size has been mounted and successfully tested as bi-dimensional beam profile monitor, able to take pictures of the incoming proton bunches at the DeFEL beamline (1-6 MeV pulsed proton beam) of the LaBeC of INFN in Florence. The naked sensor is able to successfully detect the interactions of the single protons. The sensor point-spread-function (PSF) has been qualified with 1MeV protons and is equal to one pixel (6 mm) r.m.s. in both directions. A second sensor MT9M032, featuring 1472 × 1096 pixels, 2.2 × 2.2 μm pixel size has been mounted on a dedicated board as high-resolution imager to be used in X-ray imaging experiments with table-top generators. In order to ease and simplify the data transfer and the image acquisition the system is controlled by a dedicated micro-processor board (DM3730 1GHz SoC ARM Cortex-A8) on which a modified LINUX kernel has been implemented. The paper presents the architecture of the sensor systems and the results of the experimental measurements.

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

PubMed

Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

2009-01-01

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.

PubMed

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-12-05

A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e - /s at 60 °C, an ultra-low read noise of 0.90 e - ·rms, a high full well capacity (FWC) of 4100 e - , and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.

A neighbor pixel communication filtering structure for Dynamic Vision Sensors

NASA Astrophysics Data System (ADS)

Xu, Yuan; Liu, Shiqi; Lu, Hehui; Zhang, Zilong

2017-02-01

For Dynamic Vision Sensors (DVS), thermal noise and junction leakage current induced Background Activity (BA) is the major cause of the deterioration of images quality. Inspired by the smoothing filtering principle of horizontal cells in vertebrate retina, A DVS pixel with Neighbor Pixel Communication (NPC) filtering structure is proposed to solve this issue. The NPC structure is designed to judge the validity of pixel's activity through the communication between its 4 adjacent pixels. The pixel's outputs will be suppressed if its activities are determined not real. The proposed pixel's area is 23.76×24.71μm2 and only 3ns output latency is introduced. In order to validate the effectiveness of the structure, a 5×5 pixel array has been implemented in SMIC 0.13μm CIS process. 3 test cases of array's behavioral model show that the NPC-DVS have an ability of filtering the BA.

Image sensor pixel with on-chip high extinction ratio polarizer based on 65-nm standard CMOS technology.

PubMed

Sasagawa, Kiyotaka; Shishido, Sanshiro; Ando, Keisuke; Matsuoka, Hitoshi; Noda, Toshihiko; Tokuda, Takashi; Kakiuchi, Kiyomi; Ohta, Jun

2013-05-06

In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 × 20 μm(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm.

Characterisation of Vanilla—A novel active pixel sensor for radiation detection

NASA Astrophysics Data System (ADS)

Blue, A.; Bates, R.; Laing, A.; Maneuski, D.; O'Shea, V.; Clark, A.; Prydderch, M.; Turchetta, R.; Arvanitis, C.; Bohndiek, S.

2007-10-01

Novel features of a new monolithic active pixel sensor, Vanilla, with 520×520 pixels ( 25 μm square) has been characterised for the first time. Optimisation of the sensor operation was made through variation of frame rates, integration times and on-chip biases and voltages. Features such as flushed reset operation, ROI capturing and readout modes have been fully tested. Stability measurements were performed to test its suitablility for long-term applications. These results suggest the Vanilla sensor—along with bio-medical and space applications—is suitable for use in particle physics experiments.

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

A CMOS active pixel sensor for retinal stimulation

NASA Astrophysics Data System (ADS)

Prydderch, Mark L.; French, Marcus J.; Mathieson, Keith; Adams, Christopher; Gunning, Deborah; Laudanski, Jonathan; Morrison, James D.; Moodie, Alan R.; Sinclair, James

2006-02-01

Degenerative photoreceptor diseases, such as age-related macular degeneration and retinitis pigmentosa, are the most common causes of blindness in the western world. A potential cure is to use a microelectronic retinal prosthesis to provide electrical stimulation to the remaining healthy retinal cells. We describe a prototype CMOS Active Pixel Sensor capable of detecting a visual scene and translating it into a train of electrical pulses for stimulation of the retina. The sensor consists of a 10 x 10 array of 100 micron square pixels fabricated on a 0.35 micron CMOS process. Light incident upon each pixel is converted into output current pulse trains with a frequency related to the light intensity. These outputs are connected to a biocompatible microelectrode array for contact to the retinal cells. The flexible design allows experimentation with signal amplitudes and frequencies in order to determine the most appropriate stimulus for the retina. Neural processing in the retina can be studied by using the sensor in conjunction with a Field Programmable Gate Array (FPGA) programmed to behave as a neural network. The sensor has been integrated into a test system designed for studying retinal response. We present the most recent results obtained from this sensor.

Reconstruction of 2D PET data with Monte Carlo generated system matrix for generalized natural pixels

NASA Astrophysics Data System (ADS)

Vandenberghe, Stefaan; Staelens, Steven; Byrne, Charles L.; Soares, Edward J.; Lemahieu, Ignace; Glick, Stephen J.

2006-06-01

In discrete detector PET, natural pixels are image basis functions calculated from the response of detector pairs. By using reconstruction with natural pixel basis functions, the discretization of the object into a predefined grid can be avoided. Here, we propose to use generalized natural pixel reconstruction. Using this approach, the basis functions are not the detector sensitivity functions as in the natural pixel case but uniform parallel strips. The backprojection of the strip coefficients results in the reconstructed image. This paper proposes an easy and efficient way to generate the matrix M directly by Monte Carlo simulation. Elements of the generalized natural pixel system matrix are formed by calculating the intersection of a parallel strip with the detector sensitivity function. These generalized natural pixels are easier to use than conventional natural pixels because the final step from solution to a square pixel representation is done by simple backprojection. Due to rotational symmetry in the PET scanner, the matrix M is block circulant and only the first blockrow needs to be stored. Data were generated using a fast Monte Carlo simulator using ray tracing. The proposed method was compared to a listmode MLEM algorithm, which used ray tracing for doing forward and backprojection. Comparison of the algorithms with different phantoms showed that an improved resolution can be obtained using generalized natural pixel reconstruction with accurate system modelling. In addition, it was noted that for the same resolution a lower noise level is present in this reconstruction. A numerical observer study showed the proposed method exhibited increased performance as compared to a standard listmode EM algorithm. In another study, more realistic data were generated using the GATE Monte Carlo simulator. For these data, a more uniform contrast recovery and a better contrast-to-noise performance were observed. It was observed that major improvements in contrast recovery were obtained with MLEM when the correct system matrix was used instead of simple ray tracing. The correct modelling was the major cause of improved contrast for the same background noise. Less important factors were the choice of the algorithm (MLEM performed better than ART) and the basis functions (generalized natural pixels gave better results than pixels).

On the regularity of the covariance matrix of a discretized scalar field on the sphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bilbao-Ahedo, J.D.; Barreiro, R.B.; Herranz, D.

2017-02-01

We present a comprehensive study of the regularity of the covariance matrix of a discretized field on the sphere. In a particular situation, the rank of the matrix depends on the number of pixels, the number of spherical harmonics, the symmetries of the pixelization scheme and the presence of a mask. Taking into account the above mentioned components, we provide analytical expressions that constrain the rank of the matrix. They are obtained by expanding the determinant of the covariance matrix as a sum of determinants of matrices made up of spherical harmonics. We investigate these constraints for five different pixelizationsmore » that have been used in the context of Cosmic Microwave Background (CMB) data analysis: Cube, Icosahedron, Igloo, GLESP and HEALPix, finding that, at least in the considered cases, the HEALPix pixelization tends to provide a covariance matrix with a rank closer to the maximum expected theoretical value than the other pixelizations. The effect of the propagation of numerical errors in the regularity of the covariance matrix is also studied for different computational precisions, as well as the effect of adding a certain level of noise in order to regularize the matrix. In addition, we investigate the application of the previous results to a particular example that requires the inversion of the covariance matrix: the estimation of the CMB temperature power spectrum through the Quadratic Maximum Likelihood algorithm. Finally, some general considerations in order to achieve a regular covariance matrix are also presented.« less

Estimation of a cover-type change matrix from error-prone data

Treesearch

Steen Magnussen

2009-01-01

Coregistration and classification errors seriously compromise per-pixel estimates of land cover change. A more robust estimation of change is proposed in which adjacent pixels are grouped into 3x3 clusters and treated as a unit of observation. A complete change matrix is recovered in a two-step process. The diagonal elements of a change matrix are recovered from...

CVD diamond pixel detectors for LHC experiments

NASA Astrophysics Data System (ADS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J. C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.; RD42 Collaboration

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

Investigation of CMOS pixel sensor with 0.18 μm CMOS technology for high-precision tracking detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Fu, M.; Zhang, Y.; Yan, W.; Wang, M.

2017-01-01

The Circular Electron Positron Collider (CEPC) proposed by the Chinese high energy physics community is aiming to measure Higgs particles and their interactions precisely. The tracking detector including Silicon Inner Tracker (SIT) and Forward Tracking Disks (FTD) has driven stringent requirements on sensor technologies in term of spatial resolution, power consumption and readout speed. CMOS Pixel Sensor (CPS) is a promising candidate to approach these requirements. This paper presents the preliminary studies on the sensor optimization for tracking detector to achieve high collection efficiency while keeping necessary spatial resolution. Detailed studies have been performed on the charge collection using a 0.18 μm CMOS image sensor process. This process allows high resistivity epitaxial layer, leading to a significant improvement on the charge collection and therefore improving the radiation tolerance. Together with the simulation results, the first exploratory prototype has bee designed and fabricated. The prototype includes 9 different pixel arrays, which vary in terms of pixel pitch, diode size and geometry. The total area of the prototype amounts to 2 × 7.88 mm2.

Lensless transport-of-intensity phase microscopy and tomography with a color LED matrix

NASA Astrophysics Data System (ADS)

Zuo, Chao; Sun, Jiasong; Zhang, Jialin; Hu, Yan; Chen, Qian

2015-07-01

We demonstrate lens-less quantitative phase microscopy and diffraction tomography based on a compact on-chip platform, using only a CMOS image sensor and a programmable color LED array. Based on multi-wavelength transport-of- intensity phase retrieval and multi-angle illumination diffraction tomography, this platform offers high quality, depth resolved images with a lateral resolution of ˜3.7μm and an axial resolution of ˜5μm, over wide large imaging FOV of 24mm2. The resolution and FOV can be further improved by using a larger image sensors with small pixels straightforwardly. This compact, low-cost, robust, portable platform with a decent imaging performance may offer a cost-effective tool for telemedicine needs, or for reducing health care costs for point-of-care diagnostics in resource-limited environments.

The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

PubMed Central

Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

2016-01-01

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

Two-dimensional materials based transparent flexible electronics

NASA Astrophysics Data System (ADS)

Yu, Lili; Ha, Sungjae; El-Damak, Dina; McVay, Elaine; Ling, Xi; Chandrakasan, Anantha; Kong, Jing; Palacios, Tomas

2015-03-01

Two-dimensional (2D) materials have generated great interest recently as a set of tools for electronics, as these materials can push electronics beyond traditional boundaries. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. These thin, lightweight, bendable, highly rugged and low-power devices may bring dramatic changes in information processing, communications and human-electronic interaction. In this report, for the first time, we demonstrate two complex transparent flexible systems based on molybdenum disulfide (MoS2) grown by chemical vapor method: a transparent active-matrix organic light-emitting diode (AMOLED) display and a MoS2 wireless link for sensor nodes. The 1/2 x 1/2 square inch, 4 x 5 pixels AMOLED structures are built on transparent substrates, containing MoS2 back plane circuit and OLEDs integrated on top of it. The back plane circuit turns on and off the individual pixel with two MoS2 transistors and a capacitor. The device is designed and fabricated based on SPICE simulation to achieve desired DC and transient performance. We have also demonstrated a MoS2 wireless self-powered sensor node. The system consists of as energy harvester, rectifier, sensor node and logic units. AC signals from the environment, such as near-field wireless power transfer, piezoelectric film and RF signal, are harvested, then rectified into DC signal by a MoS2 diode. CIQM, CICS, SRC.

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

The FoCal prototype—an extremely fine-grained electromagnetic calorimeter using CMOS pixel sensors

NASA Astrophysics Data System (ADS)

de Haas, A. P.; Nooren, G.; Peitzmann, T.; Reicher, M.; Rocco, E.; Röhrich, D.; Ullaland, K.; van den Brink, A.; van Leeuwen, M.; Wang, H.; Yang, S.; Zhang, C.

2018-01-01

A prototype of a Si-W EM calorimeter was built with Monolithic Active Pixel Sensors as the active elements. With a pixel size of 30 μm it allows digital calorimetry, i.e. the particle's energy is determined by counting pixels, not by measuring the energy deposited. Although of modest size, with a width of only four Moliere radii, it has 39 million pixels. In this article the construction and tuning of the prototype is described. Results from beam tests are compared with predictions of GEANT-based Monte Carlo simulations. The shape of showers caused by electrons is shown in unprecedented detail. Results for energy and position resolution are also given.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications.

PubMed

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-12-29

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors' architecture on the basis of the type of electric measurement or imaging functionalities.

Diamond Pixel Detectors

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Gobbi, B.; Grim, G. P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Perera, L.; Pirollo, S.; Plano, R.; Procario, M.; Riester, J. L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.

2001-06-01

Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles.

A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Watabe, Toshihisa; Ohtake, Hiroshi; Sakai, Toshikatsu; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, Takashi

2011-02-01

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128×96 for each color, and the pixel size is 100×100 µm2. The current on/off ratio of the ZnO TFT is over 106, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.

Development of a 750x750 pixels CMOS imager sensor for tracking applications

NASA Astrophysics Data System (ADS)

Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

2017-11-01

Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on-chip control and timing function) enabling a high flexibility architecture, make this imager a good candidate for high performance tracking applications.

Tests of monolithic active pixel sensors at national synchrotron light source

NASA Astrophysics Data System (ADS)

Deptuch, G.; Besson, A.; Carini, G. A.; Siddons, D. P.; Szelezniak, M.; Winter, M.

2007-01-01

The paper discusses basic characterization of Monolithic Active Pixel Sensors (MAPS) carried out at the X12A beam-line at National Synchrotron Light Source (NSLS), Upton, NY, USA. The tested device was a MIMOSA V (MV) chip, back-thinned down to the epitaxial layer. This 1M pixels device features a pixel size of 17×17 μm2 and was designed in a 0.6 μm CMOS process. The X-ray beam energies used range from 5 to 12 keV. Examples of direct X-ray imaging capabilities are presented.

CMOS image sensors: State-of-the-art

NASA Astrophysics Data System (ADS)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Fossum, E.; Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Zhou, Z.;

A new 9T global shutter pixel with CDS technique

NASA Astrophysics Data System (ADS)

Liu, Yang; Ma, Cheng; Zhou, Quan; Wang, Xinyang

2015-04-01

Benefiting from motion blur free, Global shutter pixel is very widely used in the design of CMOS image sensors for high speed applications such as motion vision, scientifically inspection, etc. In global shutter sensors, all pixel signal information needs to be stored in the pixel first and then waiting for readout. For higher frame rate, we need very fast operation of the pixel array. There are basically two ways for the in pixel signal storage, one is in charge domain, such as the one shown in [1], this needs complicated process during the pixel fabrication. The other one is in voltage domain, one example is the one in [2], this pixel is based on the 4T PPD technology and normally the driving of the high capacitive transfer gate limits the speed of the array operation. In this paper we report a new 9T global shutter pixel based on 3-T partially pinned photodiode (PPPD) technology. It incorporates three in-pixel storage capacitors allowing for correlated double sampling (CDS) and pipeline operation of the array (pixel exposure during the readout of the array). Only two control pulses are needed for all the pixels at the end of exposure which allows high speed exposure control.

Low temperature performance of a commercially available InGaAs image sensor

NASA Astrophysics Data System (ADS)

Nakaya, Hidehiko; Komiyama, Yutaka; Kashikawa, Nobunari; Uchida, Tomohisa; Nagayama, Takahiro; Yoshida, Michitoshi

2016-08-01

We report the evaluation results of a commercially available InGaAs image sensor manufactured by Hamamatsu Photonics K. K., which has sensitivity between 0.95μm and 1.7μm at a room temperature. The sensor format was 128×128 pixels with 20 μm pitch. It was tested with our original readout electronics and cooled down to 80 K by a mechanical cooler to minimize the dark current. Although the readout noise and dark current were 200 e- and 20 e- /sec/pixel, respectively, we found no serious problems for the linearity, wavelength response, and intra-pixel response.

A 4MP high-dynamic-range, low-noise CMOS image sensor

NASA Astrophysics Data System (ADS)

Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

2015-03-01

In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin`ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Atsushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

2014-11-01

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0-2.0 keV (FWHM) at 60 keV and 1.6-2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.

Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

PubMed

Isikman, Serhan O; Greenbaum, Alon; Luo, Wei; Coskun, Ahmet F; Ozcan, Aydogan

2012-01-01

We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2). This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ± 50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3) across a sample volume of ~5 mm(3), which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode.

Tests of UFXC32k chip with CdTe pixel detector

NASA Astrophysics Data System (ADS)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragone, A; /SLAC; Pratte, J.F.

An ASIC for the readout of signals from X-ray Active Matrix Pixel Sensor (XAMPS) detectors to be used at the Linac Coherent Light Source (LCLS) is presented. The X-ray Pump Probe (XPP) instrument, for which the ASIC has been designed, requires a large input dynamic range on the order of 104 photons at 8 keV with a resolution of half a photon FWHM. Due to the size of the pixel and the length of the readout line, large input capacitance is expected, leading to stringent requirement on the noise optimization. Furthermore, the large number of pixels needed for a goodmore » position resolution and the fixed LCLS beam period impose limitations on the time available for the single pixel readout. Considering the periodic nature of the LCLS beam, the ASIC developed for this application is a time-variant system providing low-noise charge integration, filtering and correlated double sampling. In order to cope with the large input dynamic range a charge pump scheme implementing a zero-balance measurement method has been introduced. It provides an on chip 3-bit coarse digital conversion of the integrated charge. The residual charge is sampled using correlated double sampling into analog memory and measured with the required resolution. The first 64 channel prototype of the ASIC has been fabricated in TSMC CMOS 0.25 {micro}m technology. In this paper, the ASIC architecture and performances are presented.« less

Image acquisition system using on sensor compressed sampling technique

NASA Astrophysics Data System (ADS)

Gupta, Pravir Singh; Choi, Gwan Seong

2018-01-01

Advances in CMOS technology have made high-resolution image sensors possible. These image sensors pose significant challenges in terms of the amount of raw data generated, energy efficiency, and frame rate. This paper presents a design methodology for an imaging system and a simplified image sensor pixel design to be used in the system so that the compressed sensing (CS) technique can be implemented easily at the sensor level. This results in significant energy savings as it not only cuts the raw data rate but also reduces transistor count per pixel; decreases pixel size; increases fill factor; simplifies analog-to-digital converter, JPEG encoder, and JPEG decoder design; decreases wiring; and reduces the decoder size by half. Thus, CS has the potential to increase the resolution of image sensors for a given technology and die size while significantly decreasing the power consumption and design complexity. We show that it has potential to reduce power consumption by about 23% to 65%.

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

PubMed

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-12

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

PubMed Central

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-01

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

Very-large-area CCD image sensors: concept and cost-effective research

NASA Astrophysics Data System (ADS)

Bogaart, E. W.; Peters, I. M.; Kleimann, A. C.; Manoury, E. J. P.; Klaassens, W.; de Laat, W. T. F. M.; Draijer, C.; Frost, R.; Bosiers, J. T.

2009-01-01

A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.

Charge Resolution of the Silicon Matrix of the ATIC Experiment

NASA Technical Reports Server (NTRS)

Zatsepin, V. I.; Adams, J. H., Jr.; Ahn, H. S.; Bashindzhagyan, G. L.; Batkov, K. E.; Case, G.; Christl, M.; Ganel, O.; Fazely, A. R.; Ganel, O.;

CMOS Active Pixel Sensors for Low Power, Highly Miniaturized Imaging Systems

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1996-01-01

The complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology has been developed over the past three years by NASA at the Jet Propulsion Laboratory, and has reached a level of performance comparable to CCDs with greatly increased functionality but at a very reduced power level.

Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Hyun-Sang; Jeon, Jae-Hong; Han, Min-Koo

2008-03-01

We have proposed a new poly-Si TFT pixel, which can suppress TFT leakage current effect on active matrix organic diode (AMOLED) displays, by employing a new circular switching TFT and additional signal line for compensating the leakage current. When the leakage current of switching TFT is increased, the VGS of the current driving TFT in the proposed pixel is not altered by the variable data voltages due to the circular switching TFT. Our simulation results show that OLED current variation of the proposed pixel can be suppressed less than 3%, while that of conventional pixel exceeds 30%. The proposed pixel may be suitable to suppress the leakage current effect on AMOLED display.

Assessment of the short-term radiometric stability between Terra MODIS and Landsat 7 ETM+ sensors

USGS Publications Warehouse

Choi, Taeyoung; Xiong, Xiaoxiong; Chander, Gyanesh; Angal, A.

2009-01-01

Short-term radiometric stability was evaluated using continuous ETM+ scenes within a single orbit (contact period) and the corresponding MODIS scenes for the four matching solar reflective visible and near-infrared (VNIR) band pairs between the two sensors. The near-simultaneous earth observations were limited by the smaller swath size of ETM+ (183 km) compared to MODIS (2330 km). Two sets of continuous granules for Terra MODIS and Landsat 7 ETM+ were selected and mosaicked based on pixel geolocation information for noncloudy pixels over the African continent. The matching pixel pairs were resampled from a fine to a coarse pixel resolution, and the at-sensor spectral radiance values for a wide dynamic range of the sensors were compared and analyzed, covering various surface types. The following study focuses on radiometric stability analysis from the VNIR band-pairs of ETM+ and MODIS. The Libya-4 desert target was included in the path of this continuous orbit, which served as a verification point between the short-term and the long-term trending results from previous studies. MODTRAN at-sensor spectral radiance simulation is included for a representative desert surface type to evaluate the consistency of the results.

Wearable Resistive Pressure Sensor Based on Highly Flexible Carbon Composite Conductors with Irregular Surface Morphology.

PubMed

Kim, Kang-Hyun; Hong, Soon Kyu; Jang, Nam-Su; Ha, Sung-Hun; Lee, Hyung Woo; Kim, Jong-Man

2017-05-24

Wearable pressure sensors are crucial building blocks for potential applications in real-time health monitoring, artificial electronic skins, and human-to-machine interfaces. Here we present a highly sensitive, simple-architectured wearable resistive pressure sensor based on highly compliant yet robust carbon composite conductors made of a vertically aligned carbon nanotube (VACNT) forest embedded in a polydimethylsiloxane (PDMS) matrix with irregular surface morphology. A roughened surface of the VACNT/PDMS composite conductor is simply formed using a sandblasted silicon master in a low-cost and potentially scalable manner and plays an important role in improving the sensitivity of resistive pressure sensor. After assembling two of the roughened composite conductors, our sensor shows considerable pressure sensitivity of ∼0.3 kPa -1 up to 0.7 kPa as well as stable steady-state responses under various pressures, a wide detectable range of up to 5 kPa before saturation, a relatively fast response time of ∼162 ms, and good reproducibility over 5000 cycles of pressure loading/unloading. The fabricated pressure sensor can be used to detect a wide range of human motions ranging from subtle blood pulses to dynamic joint movements, and it can also be used to map spatial pressure distribution in a multipixel platform (in a 4 × 4 pixel array).

1024-Pixel CMOS Multimodality Joint Cellular Sensor/Stimulator Array for Real-Time Holistic Cellular Characterization and Cell-Based Drug Screening.

PubMed

Park, Jong Seok; Aziz, Moez Karim; Li, Sensen; Chi, Taiyun; Grijalva, Sandra Ivonne; Sung, Jung Hoon; Cho, Hee Cheol; Wang, Hua

2018-02-01

This paper presents a fully integrated CMOS multimodality joint sensor/stimulator array with 1024 pixels for real-time holistic cellular characterization and drug screening. The proposed system consists of four pixel groups and four parallel signal-conditioning blocks. Every pixel group contains 16 × 16 pixels, and each pixel includes one gold-plated electrode, four photodiodes, and in-pixel circuits, within a pixel footprint. Each pixel supports real-time extracellular potential recording, optical detection, charge-balanced biphasic current stimulation, and cellular impedance measurement for the same cellular sample. The proposed system is fabricated in a standard 130-nm CMOS process. Rat cardiomyocytes are successfully cultured on-chip. Measured high-resolution optical opacity images, extracellular potential recordings, biphasic current stimulations, and cellular impedance images demonstrate the unique advantages of the system for holistic cell characterization and drug screening. Furthermore, this paper demonstrates the use of optical detection on the on-chip cultured cardiomyocytes to real-time track their cyclic beating pattern and beating rate.

Dedicated multichannel readout ASIC coupled with single crystal diamond for dosimeter application

NASA Astrophysics Data System (ADS)

Fabbri, A.; Falco, M. D.; De Notaristefani, F.; Galasso, M.; Marinelli, M.; Orsolini Cencelli, V.; Tortora, L.; Verona, C.; Verona Rinati, G.

2013-02-01

This paper reports on the tests of a low-noise, multi-channel readout integrated circuit used as a readout electronic front-end for a diamond multi-pixel dosimeter. The system is developed for dose distribution measurement in radiotherapy applications. The first 10-channel prototype chip was designed and fabricated in a 0.18 um CMOS process. Every channel includes a charge integrator with a 10 pF capacitor and a double slope A/D converter. The diamond multi-pixel detector, based on CVD synthetic single crystal diamond Schottky diodes, is made by a 3 × 3 sensor matrix. The overall device has been tested under irradiation with 6 MeV radio therapeutic photon beams at the Policlinico ``Tor Vergata'' (PTV) hospital. Measurements show a 20 fA RMS leakage current from the front-end input stage and a negligible dark current from the diamond detector, a stable temporal response and a good linear behaviour as a function of both dose and dose rate. These characteristics were common to each tested channel.

The progress of sub-pixel imaging methods

NASA Astrophysics Data System (ADS)

Wang, Hu; Wen, Desheng

2014-02-01

This paper reviews the Sub-pixel imaging technology principles, characteristics, the current development status at home and abroad and the latest research developments. As Sub-pixel imaging technology has achieved the advantages of high resolution of optical remote sensor, flexible working ways and being miniaturized with no moving parts. The imaging system is suitable for the application of space remote sensor. Its application prospect is very extensive. It is quite possible to be the research development direction of future space optical remote sensing technology.

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

NASA Astrophysics Data System (ADS)

Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

2018-01-01

The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

Contact CMOS imaging of gaseous oxygen sensor array

PubMed Central

Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

2014-01-01

We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

Contact CMOS imaging of gaseous oxygen sensor array.

PubMed

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jungmann-Smith, J. H., E-mail: jsmith@magnet.fsu.edu; Bergamaschi, A.; Brückner, M.

JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 ×more » 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.« less

A 256×256 low-light-level CMOS imaging sensor with digital CDS

NASA Astrophysics Data System (ADS)

Zou, Mei; Chen, Nan; Zhong, Shengyou; Li, Zhengfen; Zhang, Jicun; Yao, Li-bin

2016-10-01

In order to achieve high sensitivity for low-light-level CMOS image sensors (CIS), a capacitive transimpedance amplifier (CTIA) pixel circuit with a small integration capacitor is used. As the pixel and the column area are highly constrained, it is difficult to achieve analog correlated double sampling (CDS) to remove the noise for low-light-level CIS. So a digital CDS is adopted, which realizes the subtraction algorithm between the reset signal and pixel signal off-chip. The pixel reset noise and part of the column fixed-pattern noise (FPN) can be greatly reduced. A 256×256 CIS with CTIA array and digital CDS is implemented in the 0.35μm CMOS technology. The chip size is 7.7mm×6.75mm, and the pixel size is 15μm×15μm with a fill factor of 20.6%. The measured pixel noise is 24LSB with digital CDS in RMS value at dark condition, which shows 7.8× reduction compared to the image sensor without digital CDS. Running at 7fps, this low-light-level CIS can capture recognizable images with the illumination down to 0.1lux.

Chemiresistive Graphene Sensors for Ammonia Detection.

PubMed

Mackin, Charles; Schroeder, Vera; Zurutuza, Amaia; Su, Cong; Kong, Jing; Swager, Timothy M; Palacios, Tomás

2018-05-09

The primary objective of this work is to demonstrate a novel sensor system as a convenient vehicle for scaled-up repeatability and the kinetic analysis of a pixelated testbed. This work presents a sensor system capable of measuring hundreds of functionalized graphene sensors in a rapid and convenient fashion. The sensor system makes use of a novel array architecture requiring only one sensor per pixel and no selector transistor. The sensor system is employed specifically for the evaluation of Co(tpfpp)ClO 4 functionalization of graphene sensors for the detection of ammonia as an extension of previous work. Co(tpfpp)ClO 4 treated graphene sensors were found to provide 4-fold increased ammonia sensitivity over pristine graphene sensors. Sensors were also found to exhibit excellent selectivity over interfering compounds such as water and common organic solvents. The ability to monitor a large sensor array with 160 pixels provides insights into performance variations and reproducibility-critical factors in the development of practical sensor systems. All sensors exhibit the same linearly related responses with variations in response exhibiting Gaussian distributions, a key finding for variation modeling and quality engineering purposes. The mean correlation coefficient between sensor responses was found to be 0.999 indicating highly consistent sensor responses and excellent reproducibility of Co(tpfpp)ClO 4 functionalization. A detailed kinetic model is developed to describe sensor response profiles. The model consists of two adsorption mechanisms-one reversible and one irreversible-and is shown capable of fitting experimental data with a mean percent error of 0.01%.

Novel Si-Ge-C Superlattices for More than Moore CMOS

DTIC Science & Technology

2016-03-31

diodes can be entirely formed by epitaxial growth, CMOS Active Pixel Sensors can be made with Fully-Depleted SOI CMOS . One important advantage of...a NMOS Transfer Gate (TG), which could be part of a 4T pixel APS. PPDs are preferred in CMOS image sensors for the ability of the pinning layer to...than Moore” with the creation of active photonic devices monolithically integrated with CMOS . Applications include Multispectral CMOS Image Sensors

The first bump-bonded pixel detectors on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

Investigation on Constrained Matrix Factorization for Hyperspectral Image Analysis

DTIC Science & Technology

2005-07-25

analysis. Keywords: matrix factorization; nonnegative matrix factorization; linear mixture model ; unsupervised linear unmixing; hyperspectral imagery...spatial resolution permits different materials present in the area covered by a single pixel. The linear mixture model says that a pixel reflectance in...in r. In the linear mixture model , r is considered as the linear mixture of m1, m2, …, mP as nMαr += (1) where n is included to account for

Estimating neighborhood variability with a binary comparison matrix.

USGS Publications Warehouse

Murphy, D.L.

1985-01-01

A technique which utilizes a binary comparison matrix has been developed to implement a neighborhood function for a raster format data base. The technique assigns an index value to the center pixel of 3- by 3-pixel neighborhoods. The binary comparison matrix provides additional information not found in two other neighborhood variability statistics; the function is sensitive to both the number of classes within the neighborhood and the frequency of pixel occurrence in each of the classes. Application of the function to a spatial data base from the Kenai National Wildlife Refuge, Alaska, demonstrates 1) the numerical distribution of the index values, and 2) the spatial patterns exhibited by the numerical values. -Author

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability.

PubMed

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U

2015-03-06

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle.

An Ultra-Low Power CMOS Image Sensor with On-Chip Energy Harvesting and Power Management Capability

PubMed Central

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U.

2015-01-01

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle. PMID:25756863

JPL CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

PubMed

Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

2015-04-01

Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

The Belle II DEPFET pixel detector

NASA Astrophysics Data System (ADS)

Moser, Hans-Günther; DEPFET Collaboration

2016-09-01

The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55-60) μm in the first layer and between 50 μm×(70-85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the 'internal gate' modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X0). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO2 system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

In-situ device integration of large-area patterned organic nanowire arrays for high-performance optical sensors

PubMed Central

Wu, Yiming; Zhang, Xiujuan; Pan, Huanhuan; Deng, Wei; Zhang, Xiaohong; Zhang, Xiwei; Jie, Jiansheng

2013-01-01

Single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices due to their extraordinary properties. However, it remains a critical challenge to achieve large-scale organic NW array assembly and device integration. Herein, we demonstrate a feasible one-step method for large-area patterned growth of cross-aligned single-crystalline organic NW arrays and their in-situ device integration for optical image sensors. The integrated image sensor circuitry contained a 10 × 10 pixel array in an area of 1.3 × 1.3 mm2, showing high spatial resolution, excellent stability and reproducibility. More importantly, 100% of the pixels successfully operated at a high response speed and relatively small pixel-to-pixel variation. The high yield and high spatial resolution of the operational pixels, along with the high integration level of the device, clearly demonstrate the great potential of the one-step organic NW array growth and device construction approach for large-scale optoelectronic device integration. PMID:24287887

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long.more » A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.« less

Silicon technologies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Spannagel, S.

2017-06-01

CLIC is a proposed linear e+e- collider designed to provide particle collisions at center-of-mass energies of up to 3 TeV. Precise measurements of the properties of the top quark and the Higgs boson, as well as searches for Beyond the Standard Model physics require a highly performant CLIC detector. In particular the vertex detector must provide a single point resolution of only a few micrometers while not exceeding the envisaged material budget of around 0.2% X0 per layer. Beam-beam interactions and beamstrahlung processes impose an additional requirement on the timestamping capabilities of the vertex detector of about 10 ns. These goals can only be met by using novel techniques in the sensor and ASIC design as well as in the detector construction. The R&D program for the CLIC vertex detector explores various technologies in order to meet these demands. The feasibility of planar sensors with a thickness of 50-150 μm, including different active edge designs, are evaluated using Timepix3 ASICs. First prototypes of the CLICpix readout ASIC, implemented in 65 nm CMOS technology and with a pixel size of 25×25μm 2, have been produced and tested in particle beams. An updated version of the ASIC with a larger pixel matrix and improved precision of the time-over-threshold and time-of-arrival measurements has been submitted. Different hybridization concepts have been developed for the interconnection between the sensor and readout ASIC, ranging from small-pitch bump bonding of planar sensors to capacitive coupling of active HV-CMOS sensors. Detector simulations based on Geant 4 and TCAD are compared with experimental results to assess and optimize the performance of the various designs. This contribution gives an overview of the R&D program undertaken for the CLIC vertex detector and presents performance measurements of the prototype detectors currently under investigation.

10000 pixels wide CMOS frame imager for earth observation from a HALE UAV

NASA Astrophysics Data System (ADS)

Delauré, B.; Livens, S.; Everaerts, J.; Kleihorst, R.; Schippers, Gert; de Wit, Yannick; Compiet, John; Banachowicz, Bartosz

2009-09-01

MEDUSA is the lightweight high resolution camera, designed to be operated from a solar-powered Unmanned Aerial Vehicle (UAV) flying at stratospheric altitudes. The instrument is a technology demonstrator within the Pegasus program and targets applications such as crisis management and cartography. A special wide swath CMOS imager has been developed by Cypress Semiconductor Cooperation Belgium to meet the specific sensor requirements of MEDUSA. The CMOS sensor has a stitched design comprising a panchromatic and color sensor on the same die. Each sensor consists of 10000*1200 square pixels (5.5μm size, novel 6T architecture) with micro-lenses. The exposure is performed by means of a high efficiency snapshot shutter. The sensor is able to operate at a rate of 30fps in full frame readout. Due to a novel pixel design, the sensor has low dark leakage of the memory elements (PSNL) and low parasitic light sensitivity (PLS). Still it maintains a relative high QE (Quantum efficiency) and a FF (fill factor) of over 65%. It features an MTF (Modulation Transfer Function) higher than 60% at Nyquist frequency in both X and Y directions The measured optical/electrical crosstalk (expressed as MTF) of this 5.5um pixel is state-of-the art. These properties makes it possible to acquire sharp images also in low-light conditions.

A Framework for Propagation of Uncertainties in the Kepler Data Analysis Pipeline

NASA Technical Reports Server (NTRS)

Clarke, Bruce D.; Allen, Christopher; Bryson, Stephen T.; Caldwell, Douglas A.; Chandrasekaran, Hema; Cote, Miles T.; Girouard, Forrest; Jenkins, Jon M.; Klaus, Todd C.; Li, Jie;

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Characterisation of GaAs:Cr pixel sensors coupled to Timepix chips in view of synchrotron applications

NASA Astrophysics Data System (ADS)

Ponchut, C.; Cotte, M.; Lozinskaya, A.; Zarubin, A.; Tolbanov, O.; Tyazhev, A.

2017-12-01

In order to meet the needs of some ESRF beamlines for highly efficient 2D X-ray detectors in the 20-50 keV range, GaAs:Cr pixel sensors coupled to TIMEPIX readout chips were implemented into a MAXIPIX detector. Use of GaAs:Cr sensor material is intended to overcome the limitations of Si (low absorption) and of CdTe (fluorescence) in this energy range The GaAs:Cr sensor assemblies were characterised with both laboratory X-ray sources and monochromatic synchrotron X-ray beams. The sensor response as a function of bias voltage was compared to a theoretical model, leading to an estimation of the μτ product of electrons in GaAs:Cr sensor material of 1.6×10-4 cm2/V. The spatial homogeneity of X-ray images obtained with the sensors was measured in different irradiation conditions, showing a particular sensitivity to small variations in the incident beam spectrum. 2D-resolved elemental mapping of the sensor surface was carried out to investigate a possible relation between the noise pattern observed in X-ray images and local fluctuations in chemical composition. A scanning of the sensor response at subpixel scale revealed that these irregularities can be correlated with a distortion of the effective pixel shapes.

Macro Pixel ASIC (MPA): the readout ASIC for the pixel-strip (PS) module of the CMS outer tracker at HL-LHC

NASA Astrophysics Data System (ADS)

Ceresa, D.; Marchioro, A.; Kloukinas, K.; Kaplon, J.; Bialas, W.; Re, V.; Traversi, G.; Gaioni, L.; Ratti, L.

2014-11-01

The CMS tracker at HL-LHC is required to provide prompt information on particles with high transverse momentum to the central Level 1 trigger. For this purpose, the innermost part of the outer tracker is based on a combination of a pixelated sensor with a short strip sensor, the so-called Pixel-Strip module (PS). The readout of these sensors is carried out by distinct ASICs, the Strip Sensor ASIC (SSA), for the strip layer, and the Macro Pixel ASIC (MPA) for the pixel layer. The processing of the data directly on the front-end module represents a design challenge due to the large data volume (30720 pixels and 1920 strips per module) and the limited power budget. This is the reason why several studies have been carried out to find the best compromise between ASICs performance and power consumption. This paper describes the current status of the MPA ASIC development where the logic for generating prompt information on particles with high transverse momentum is implemented. An overview of the readout method is presented with particular attention on the cluster reduction, position encoding and momentum discrimination logic. Concerning the architectural studies, a software test bench capable of reading physics Monte-Carlo generated events has been developed and used to validate the MPA design and to evaluate the MPA performance. The MPA-Light is scheduled to be submitted for fabrication this year and will include the full analog functions and a part of the digital logic of the final version in order to qualify the chosen VLSI technology for the analog front-end, the module assembly and the low voltage digital supply.

Crosstalk quantification, analysis, and trends in CMOS image sensors.

PubMed

Blockstein, Lior; Yadid-Pecht, Orly

2010-08-20

Pixel crosstalk (CTK) consists of three components, optical CTK (OCTK), electrical CTK (ECTK), and spectral CTK (SCTK). The CTK has been classified into two groups: pixel-architecture dependent and pixel-architecture independent. The pixel-architecture-dependent CTK (PADC) consists of the sum of two CTK components, i.e., the OCTK and the ECTK. This work presents a short summary of a large variety of methods for PADC reduction. Following that, this work suggests a clear quantifiable definition of PADC. Three complementary metal-oxide-semiconductor (CMOS) image sensors based on different technologies were empirically measured, using a unique scanning technology, the S-cube. The PADC is analyzed, and technology trends are shown.

The INFN-FBK pixel R&D program for HL-LHC

NASA Astrophysics Data System (ADS)

Meschini, M.; Dalla Betta, G. F.; Boscardin, M.; Calderini, G.; Darbo, G.; Giacomini, G.; Messineo, A.; Ronchin, S.

2016-09-01

We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.

Evaluating video digitizer errors

NASA Astrophysics Data System (ADS)

Peterson, C.

2016-01-01

Analog output video cameras remain popular for recording meteor data. Although these cameras uniformly employ electronic detectors with fixed pixel arrays, the digitization process requires resampling the horizontal lines as they are output in order to reconstruct the pixel data, usually resulting in a new data array of different horizontal dimensions than the native sensor. Pixel timing is not provided by the camera, and must be reconstructed based on line sync information embedded in the analog video signal. Using a technique based on hot pixels, I present evidence that jitter, sync detection, and other timing errors introduce both position and intensity errors which are not present in cameras which internally digitize their sensors and output the digital data directly.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel †

PubMed Central

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-01-01

A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e−/s at 60 °C, an ultra-low read noise of 0.90 e−·rms, a high full well capacity (FWC) of 4100 e−, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed. PMID:29206162

Smart image sensors: an emerging key technology for advanced optical measurement and microsystems

NASA Astrophysics Data System (ADS)

Seitz, Peter

1996-08-01

Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one 'smart image sensor' or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each 'smart pixel' with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality: Single-chip cameras with on- chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, single-chip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additional compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

A Novel Multi-Aperture Based Sun Sensor Based on a Fast Multi-Point MEANSHIFT (FMMS) Algorithm

PubMed Central

You, Zheng; Sun, Jian; Xing, Fei; Zhang, Gao-Fei

2011-01-01

With the current increased widespread interest in the development and applications of micro/nanosatellites, it was found that we needed to design a small high accuracy satellite attitude determination system, because the star trackers widely used in large satellites are large and heavy, and therefore not suitable for installation on micro/nanosatellites. A Sun sensor + magnetometer is proven to be a better alternative, but the conventional sun sensor has low accuracy, and cannot meet the requirements of the attitude determination systems of micro/nanosatellites, so the development of a small high accuracy sun sensor with high reliability is very significant. This paper presents a multi-aperture based sun sensor, which is composed of a micro-electro-mechanical system (MEMS) mask with 36 apertures and an active pixels sensor (APS) CMOS placed below the mask at a certain distance. A novel fast multi-point MEANSHIFT (FMMS) algorithm is proposed to improve the accuracy and reliability, the two key performance features, of an APS sun sensor. When the sunlight illuminates the sensor, a sun spot array image is formed on the APS detector. Then the sun angles can be derived by analyzing the aperture image location on the detector via the FMMS algorithm. With this system, the centroid accuracy of the sun image can reach 0.01 pixels, without increasing the weight and power consumption, even when some missing apertures and bad pixels appear on the detector due to aging of the devices and operation in a harsh space environment, while the pointing accuracy of the single-aperture sun sensor using the conventional correlation algorithm is only 0.05 pixels. PMID:22163770

Comparison of Huanjing and Landsat satellite remote sensing of the spatial heterogeneity of Qinghai-Tibet alpine grassland

NASA Astrophysics Data System (ADS)

Wang, Junbang; Sun, Wenyi

2014-11-01

Remote sensing is widely applied in the study of terrestrial primary production and the global carbon cycle. The researches on the spatial heterogeneity in images with different sensors and resolutions would improve the application of remote sensing. In this study two sites on alpine meadow grassland in Qinghai, China, which have distinct fractal vegetation cover, were used to test and analyze differences between Normalized Difference Vegetation Index (NDVI) and enhanced vegetation index (EVI) derived from the Huanjing (HJ) and Landsat Thematic Mapper (TM) sensors. The results showed that: 1) NDVI estimated from HJ were smaller than the corresponding values from TM at the two sites whereas EVI were almost the same for the two sensors. 2) The overall variance represented by HJ data was consistently about half of that of Landsat TM although their nominal pixel size is approximately 30m for both sensors. The overall variance from EVI is greater than that from NDVI. The difference of the range between the two sensors is about 6 pixels at 30m resolution. The difference of the range in which there is not more corrective between two vegetation indices is about 1 pixel. 3) The sill decreased when pixel size increased from 30m to 1km, and then decreased very quickly when pixel size is changed to 250m from 30m or 90m but slowly when changed from 250m to 500m. HJ can capture this spatial heterogeneity to some extent and this study provides foundations for the use of the sensor for validation of net primary productivity estimates obtained from ecosystem process models.

Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

NASA Astrophysics Data System (ADS)

Na, Jun-Seok; Kwon, Oh-Kyong

2014-01-01

We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

UV-visible sensors based on polymorphous silicon

NASA Astrophysics Data System (ADS)

Guedj, Cyril S.; Cabarrocas, Pere R. i.; Massoni, Nicolas; Moussy, Norbert; Morel, Damien; Tchakarov, Svetoslav; Bonnassieux, Yvan

2003-09-01

UV-based imaging systems can be used for low-altitude rockets detection or biological agents identification (for instance weapons containing ANTHRAX). Compared to conventional CCD technology, CMOS-based active pixel sensors provide several advantages, including excellent electro-optical performances, high integration, low voltage operation, low power consumption, low cost, long lifetime, and robustness against environment. The monolithic integration of UV, visible and infrared detectors on the same uncooled CMOS smart system would therefore represent a major advance in the combat field, for characterization and representation of targets and backgrounds. In this approach, we have recently developped a novel technology using polymorphous silicon. This new material, fully compatible with above-IC silicon technology, is made of nanometric size ordered domains embedded in an amorphous matrix. The typical quantum efficiency of detectors made of this nano-material reach up to 80 % at 550 nm and 30 % in the UV range, depending of the design and the growth parameters. Furthermore, a record dark current of 20 pA/cm2 at -3 V has been reached. In addition, this new generation of sensors is significantly faster and more stable than their amorphous silicon counterparts. In this paper, we will present the relationship between the sensor technology and the overall performances.

Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

PubMed

Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

2013-06-01

We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration.

Smart CMOS image sensor for lightning detection and imaging.

PubMed

Rolando, Sébastien; Goiffon, Vincent; Magnan, Pierre; Corbière, Franck; Molina, Romain; Tulet, Michel; Bréart-de-Boisanger, Michel; Saint-Pé, Olivier; Guiry, Saïprasad; Larnaudie, Franck; Leone, Bruno; Perez-Cuevas, Leticia; Zayer, Igor

2013-03-01

We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach.

Low noise WDR ROIC for InGaAs SWIR image sensor

NASA Astrophysics Data System (ADS)

Ni, Yang

2017-11-01

Hybridized image sensors are actually the only solution for image sensing beyond the spectral response of silicon devices. By hybridization, we can combine the best sensing material and photo-detector design with high performance CMOS readout circuitry. In the infrared band, we are facing typically 2 configurations: high background situation and low background situation. The performance of high background sensors are conditioned mainly by the integration capacity in each pixel which is the case for mid-wave and long-wave infrared detectors. For low background situation, the detector's performance is mainly limited by the pixel's noise performance which is conditioned by dark signal and readout noise. In the case of reflection based imaging condition, the pixel's dynamic range is also an important parameter. This is the case for SWIR band imaging. We are particularly interested by InGaAs based SWIR image sensors.

Infrared sensors for Earth observation missions

NASA Astrophysics Data System (ADS)

Ashcroft, P.; Thorne, P.; Weller, H.; Baker, I.

2007-10-01

SELEX S&AS is developing a family of infrared sensors for earth observation missions. The spectral bands cover shortwave infrared (SWIR) channels from around 1μm to long-wave infrared (LWIR) channels up to 15μm. Our mercury cadmium telluride (MCT) technology has enabled a sensor array design that can satisfy the requirements of all of the SWIR and medium-wave infrared (MWIR) bands with near-identical arrays. This is made possible by the combination of a set of existing technologies that together enable a high degree of flexibility in the pixel geometry, sensitivity, and photocurrent integration capacity. The solution employs a photodiode array under the control of a readout integrated circuit (ROIC). The ROIC allows flexible geometries and in-pixel redundancy to maximise operability and reliability, by combining the photocurrent from a number of photodiodes into a single pixel. Defective or inoperable diodes (or "sub-pixels") can be deselected with tolerable impact on the overall pixel performance. The arrays will be fabricated using the "loophole" process in MCT grown by liquid-phase epitaxy (LPE). These arrays are inherently robust, offer high quantum efficiencies and have been used in previous space programs. The use of loophole arrays also offers access to SELEX's avalanche photodiode (APD) technology, allowing low-noise, highly uniform gain at the pixel level where photon flux is very low.

Extraction of incident irradiance from LWIR hyperspectral imagery

NASA Astrophysics Data System (ADS)

Lahaie, Pierre

2014-10-01

The atmospheric correction of thermal hyperspectral imagery can be separated in two distinct processes: Atmospheric Compensation (AC) and Temperature and Emissivity separation (TES). TES requires for input at each pixel, the ground leaving radiance and the atmospheric downwelling irradiance, which are the outputs of the AC process. The extraction from imagery of the downwelling irradiance requires assumptions about some of the pixels' nature, the sensor and the atmosphere. Another difficulty is that, often the sensor's spectral response is not well characterized. To deal with this unknown, we defined a spectral mean operator that is used to filter the ground leaving radiance and a computation of the downwelling irradiance from MODTRAN. A user will select a number of pixels in the image for which the emissivity is assumed to be known. The emissivity of these pixels is assumed to be smooth and that the only spectrally fast varying variable in the downwelling irradiance. Using these assumptions we built an algorithm to estimate the downwelling irradiance. The algorithm is used on all the selected pixels. The estimated irradiance is the average on the spectral channels of the resulting computation. The algorithm performs well in simulation and results are shown for errors in the assumed emissivity and for errors in the atmospheric profiles. The sensor noise influences mainly the required number of pixels.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

PubMed Central

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-01-01

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities. PMID:28879978

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

NASA Technical Reports Server (NTRS)

Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Staller, C.; Zhou, Z;

Can direct electron detectors outperform phosphor-CCD systems for TEM?

NASA Astrophysics Data System (ADS)

Moldovan, G.; Li, X.; Kirkland, A.

2008-08-01

A new generation of imaging detectors is being considered for application in TEM, but which device architectures can provide the best images? Monte Carlo simulations of the electron-sensor interaction are used here to calculate the expected modulation transfer of monolithic active pixel sensors (MAPS), hybrid active pixel sensors (HAPS) and double sided Silicon strip detectors (DSSD), showing that ideal and nearly ideal transfer can be obtained using DSSD and MAPS sensors. These results highly recommend the replacement of current phosphor screen and charge coupled device imaging systems with such new directly exposed position sensitive electron detectors.

Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

NASA Technical Reports Server (NTRS)

Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.;

High-speed line-scan camera with digital time delay integration

NASA Astrophysics Data System (ADS)

Bodenstorfer, Ernst; Fürtler, Johannes; Brodersen, Jörg; Mayer, Konrad J.; Eckel, Christian; Gravogl, Klaus; Nachtnebel, Herbert

2007-02-01

Dealing with high-speed image acquisition and processing systems, the speed of operation is often limited by the amount of available light, due to short exposure times. Therefore, high-speed applications often use line-scan cameras, based on charge-coupled device (CCD) sensors with time delayed integration (TDI). Synchronous shift and accumulation of photoelectric charges on the CCD chip - according to the objects' movement - result in a longer effective exposure time without introducing additional motion blur. This paper presents a high-speed color line-scan camera based on a commercial complementary metal oxide semiconductor (CMOS) area image sensor with a Bayer filter matrix and a field programmable gate array (FPGA). The camera implements a digital equivalent to the TDI effect exploited with CCD cameras. The proposed design benefits from the high frame rates of CMOS sensors and from the possibility of arbitrarily addressing the rows of the sensor's pixel array. For the digital TDI just a small number of rows are read out from the area sensor which are then shifted and accumulated according to the movement of the inspected objects. This paper gives a detailed description of the digital TDI algorithm implemented on the FPGA. Relevant aspects for the practical application are discussed and key features of the camera are listed.

User-interactive electronic skin for instantaneous pressure visualization

NASA Astrophysics Data System (ADS)

Wang, Chuan; Hwang, David; Yu, Zhibin; Takei, Kuniharu; Park, Junwoo; Chen, Teresa; Ma, Biwu; Javey, Ali

2013-10-01

Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli. Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic demonstration where three distinct electronic components—thin-film transistor, pressure sensor and OLED arrays—are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.

User-interactive electronic skin for instantaneous pressure visualization.

PubMed

Wang, Chuan; Hwang, David; Yu, Zhibin; Takei, Kuniharu; Park, Junwoo; Chen, Teresa; Ma, Biwu; Javey, Ali

2013-10-01

Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli. Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic demonstration where three distinct electronic components--thin-film transistor, pressure sensor and OLED arrays--are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.

Polarization-Analyzing CMOS Image Sensor With Monolithically Embedded Polarizer for Microchemistry Systems.

PubMed

Tokuda, T; Yamada, H; Sasagawa, K; Ohta, J

2009-10-01

This paper proposes and demonstrates a polarization-analyzing CMOS sensor based on image sensor architecture. The sensor was designed targeting applications for chiral analysis in a microchemistry system. The sensor features a monolithically embedded polarizer. Embedded polarizers with different angles were implemented to realize a real-time absolute measurement of the incident polarization angle. Although the pixel-level performance was confirmed to be limited, estimation schemes based on the variation of the polarizer angle provided a promising performance for real-time polarization measurements. An estimation scheme using 180 pixels in a 1deg step provided an estimation accuracy of 0.04deg. Polarimetric measurements of chiral solutions were also successfully performed to demonstrate the applicability of the sensor to optical chiral analysis.

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

NASA Astrophysics Data System (ADS)

Beyer, J.-C.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Savic, N.; Taibah, R.

2018-01-01

In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4×1016 1 MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe challenge. Thanks to their low material budget and high charge collection efficiency after irradiation, modules made of thin planar pixel sensors are promising candidates to instrument these layers. To optimise the sensor layout for the decreased pixel cell size of 50×50 μm2, TCAD device simulations are being performed to investigate the charge collection efficiency before and after irradiation. In addition, sensors of 100-150 μm thickness, interconnected to FE-I4 read-out chips featuring the previous generation pixel cell size of 50×250 μm2, are characterised with testbeams at the CERN-SPS and DESY facilities. The performance of sensors with various designs, irradiated up to a fluence of 1×1016 neq./cm2, is compared in terms of charge collection and hit efficiency. A replacement of the two innermost pixel layers is foreseen during the lifetime of HL-LHC . The replacement will require several months of intervention, during which the remaining detector modules cannot be cooled. They are kept at room temperature, thus inducing an annealing. The performance of irradiated modules will be investigated with testbeam campaigns and the method of accelerated annealing at higher temperatures.

Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

NASA Astrophysics Data System (ADS)

Park, Ick-Joon; Jeong, Chan-Yong; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik; Kwon, Sang Jik; Kim, Bosul; Cheong, Woo-Seok; Song, Sang-Hun; Kwon, Hyuck-In

2012-10-01

In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments.

Fabrication of a Kilopixel Array of Superconducting Microcalorimeters with Microstripline Wiring

NASA Technical Reports Server (NTRS)

Chervenak, James

2012-01-01

A document describes the fabrication of a two-dimensional microcalorimeter array that uses microstrip wiring and integrated heat sinking to enable use of high-performance pixel designs at kilopixel scales (32 X 32). Each pixel is the high-resolution design employed in small-array test devices, which consist of a Mo/Au TES (transition edge sensor) on a silicon nitride membrane and an electroplated Bi/Au absorber. The pixel pitch within the array is 300 microns, where absorbers 290 microns on a side are cantilevered over a silicon support grid with 100-micron-wide beams. The high-density wiring and heat sinking are both carried by the silicon beams to the edge of the array. All pixels are wired out to the array edge. ECR (electron cyclotron resonance) oxide underlayer is deposited underneath the sensor layer. The sensor (TES) layer consists of a superconducting underlayer and a normal metal top layer. If the sensor is deposited at high temperature, the ECR oxide can be vacuum annealed to improve film smoothness and etch characteristics. This process is designed to recover high-resolution, single-pixel x-ray microcalorimeter performance within arrays of arbitrarily large format. The critical current limiting parts of the circuit are designed to have simple interfaces that can be independently verified. The lead-to-TES interface is entirely determined in a single layer that has multiple points of interface to maximize critical current. The lead rails that overlap the TES sensor element contact both the superconducting underlayer and the TES normal metal

Dual cameras acquisition and display system of retina-like sensor camera and rectangular sensor camera

NASA Astrophysics Data System (ADS)

Cao, Nan; Cao, Fengmei; Lin, Yabin; Bai, Tingzhu; Song, Shengyu

2015-04-01

For a new kind of retina-like senor camera and a traditional rectangular sensor camera, dual cameras acquisition and display system need to be built. We introduce the principle and the development of retina-like senor. Image coordinates transformation and interpolation based on sub-pixel interpolation need to be realized for our retina-like sensor's special pixels distribution. The hardware platform is composed of retina-like senor camera, rectangular sensor camera, image grabber and PC. Combined the MIL and OpenCV library, the software program is composed in VC++ on VS 2010. Experience results show that the system can realizes two cameras' acquisition and display.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

PubMed

Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

2018-01-03

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †

PubMed Central

Clarke, Andrew S.; Ivory, James; Holland, Andrew D.

2018-01-01

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths. PMID:29301379

Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system

NASA Astrophysics Data System (ADS)

Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Giubilato, P.; Hillemanns, H.; Junique, A.; Keil, M.; Kim, D.; Kim, J.; Kugathasan, T.; Lattuca, A.; Mager, M.; Marin Tobon, C. A.; Marras, D.; Martinengo, P.; Mattiazzo, S.; Mazza, G.; Mugnier, H.; Musa, L.; Pantano, D.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Siddhanta, S.; Snoeys, W.; Usai, G.; van Hoorne, J. W.; Yang, P.; Yi, J.

2013-12-01

ALICE plans an upgrade of its Inner Tracking System for 2018. The development of a monolithic active pixel sensor for this upgrade is described. The TowerJazz 180 nm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel due to the offering of a deep pwell and also to use different starting materials. The ALPIDE development is an alternative to approaches based on a rolling shutter architecture, and aims to reduce power consumption and integration time by an order of magnitude below the ALICE specifications, which would be quite beneficial in terms of material budget and background. The approach is based on an in-pixel binary front-end combined with a hit-driven architecture. Several prototypes have already been designed, submitted for fabrication and some of them tested with X-ray sources and particles in a beam. Analog power consumption has been limited by optimizing the Q/C of the sensor using Explorer chips. Promising but preliminary first results have also been obtained with a prototype ALPIDE. Radiation tolerance up to the ALICE requirements has also been verified.

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

High dynamic range vision sensor for automotive applications

NASA Astrophysics Data System (ADS)

Grenet, Eric; Gyger, Steve; Heim, Pascal; Heitger, Friedrich; Kaess, Francois; Nussbaum, Pascal; Ruedi, Pierre-Francois

2005-02-01

A 128 x 128 pixels, 120 dB vision sensor extracting at the pixel level the contrast magnitude and direction of local image features is used to implement a lane tracking system. The contrast representation (relative change of illumination) delivered by the sensor is independent of the illumination level. Together with the high dynamic range of the sensor, it ensures a very stable image feature representation even with high spatial and temporal inhomogeneities of the illumination. Dispatching off chip image feature is done according to the contrast magnitude, prioritizing features with high contrast magnitude. This allows to reduce drastically the amount of data transmitted out of the chip, hence the processing power required for subsequent processing stages. To compensate for the low fill factor (9%) of the sensor, micro-lenses have been deposited which increase the sensitivity by a factor of 5, corresponding to an equivalent of 2000 ASA. An algorithm exploiting the contrast representation output by the vision sensor has been developed to estimate the position of a vehicle relative to the road markings. The algorithm first detects the road markings based on the contrast direction map. Then, it performs quadratic fits on selected kernel of 3 by 3 pixels to achieve sub-pixel accuracy on the estimation of the lane marking positions. The resulting precision on the estimation of the vehicle lateral position is 1 cm. The algorithm performs efficiently under a wide variety of environmental conditions, including night and rainy conditions.

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

NASA Astrophysics Data System (ADS)

Savic, N.; Beyer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.

2016-12-01

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

NASA Astrophysics Data System (ADS)

Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Gruner, S. M.

2018-01-01

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

Advancements in DEPMOSFET device developments for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Bombelli, L.; Eckart, R.; Fiorini, C.; Fischer, P.; Hälker, O.; Herrmann, S.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Schaller, G.; Schopper, F.; Soltau, H.; Strüder, L.; Wölfel, S.

2006-06-01

DEPMOSFET based Active Pixel Sensor (APS) matrices are a new detector concept for X-ray imaging spectroscopy missions. They can cope with the challenging requirements of the XEUS Wide Field Imager and combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. From the evaluation of first prototypes, new concepts have been developed to overcome the minor drawbacks and problems encountered for the older devices. The new devices will have a pixel size of 75 μm × 75 μm. Besides 64 × 64 pixel arrays, prototypes with a sizes of 256 × 256 pixels and 128 × 512 pixels and an active area of about 3.6 cm2 will be produced, a milestone on the way towards the fully grown XEUS WFI device. The production of these improved devices is currently on the way. At the same time, the development of the next generation of front-end electronics has been started, which will permit to operate the sensor devices with the readout speed required by XEUS. Here, a summary of the DEPFET capabilities, the concept of the sensors of the next generation and the new front-end electronics will be given. Additionally, prospects of new device developments using the DEPFET as a sensitive element are shown, e.g. so-called RNDR-pixels, which feature repetitive non-destructive readout to lower the readout noise below the 1 e - ENC limit.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M. (Inventor); Hancock, Bruce R. (Inventor)

2017-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Smith, Roger M (Inventor); Hancock, Bruce R. (Inventor); Cole, David (Inventor); Seshadri, Suresh (Inventor)

2013-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

The CAOS camera platform: ushering in a paradigm change in extreme dynamic range imager design

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.

2017-02-01

Multi-pixel imaging devices such as CCD, CMOS and Focal Plane Array (FPA) photo-sensors dominate the imaging world. These Photo-Detector Array (PDA) devices certainly have their merits including increasingly high pixel counts and shrinking pixel sizes, nevertheless, they are also being hampered by limitations in instantaneous dynamic range, inter-pixel crosstalk, quantum full well capacity, signal-to-noise ratio, sensitivity, spectral flexibility, and in some cases, imager response time. Recently invented is the Coded Access Optical Sensor (CAOS) Camera platform that works in unison with current Photo-Detector Array (PDA) technology to counter fundamental limitations of PDA-based imagers while providing high enough imaging spatial resolution and pixel counts. Using for example the Texas Instruments (TI) Digital Micromirror Device (DMD) to engineer the CAOS camera platform, ushered in is a paradigm change in advanced imager design, particularly for extreme dynamic range applications.

Beyond the resolution limit: subpixel resolution in animals and now in silicon

NASA Astrophysics Data System (ADS)

Wilcox, M. J.

2007-09-01

Automatic acquisition of aerial threats at thousands of kilometers distance requires high sensitivity to small differences in contrast and high optical quality for subpixel resolution, since targets occupy much less surface area than a single pixel. Targets travel at high speed and break up in the re-entry phase. Target/decoy discrimination at the earliest possible time is imperative. Real time performance requires a multifaceted approach with hyperspectral imaging and analog processing allowing feature extraction in real time. Hyperacuity Systems has developed a prototype chip capable of nonlinear increase in resolution or subpixel resolution far beyond either pixel size or spacing. Performance increase is due to a biomimetic implementation of animal retinas. Photosensitivity is not homogeneous across the sensor surface, allowing pixel parsing. It is remarkably simple to provide this profile to detectors and we showed at least three ways to do so. Individual photoreceptors have a Gaussian sensitivity profile and this nonlinear profile can be exploited to extract high-resolution. Adaptive, analog circuitry provides contrast enhancement, dynamic range setting with offset and gain control. Pixels are processed in parallel within modular elements called cartridges like photo-receptor inputs in fly eyes. These modular elements are connected by a novel function for a cell matrix known as L4. The system is exquisitely sensitive to small target motion and operates with a robust signal under degraded viewing conditions, allowing detection of targets smaller than a single pixel or at greater distance. Therefore, not only is instantaneous feature extraction possible but also subpixel resolution. Analog circuitry increases processing speed with more accurate motion specification for target tracking and identification.

Optical and electrical characterization of a back-thinned CMOS active pixel sensor

NASA Astrophysics Data System (ADS)

Blue, Andrew; Clark, A.; Houston, S.; Laing, A.; Maneuski, D.; Prydderch, M.; Turchetta, R.; O'Shea, V.

2009-06-01

This work will report on the first work on the characterization of a back-thinned Vanilla-a 512×512 (25 μm squared) active pixel sensor (APS). Characterization of the detectors was carried out through the analysis of photon transfer curves to yield a measurement of full well capacity, noise levels, gain constants and linearity. Spectral characterization of the sensors was also performed in the visible and UV regions. A full comparison against non-back-thinned front illuminated Vanilla sensors is included. Such measurements suggest that the Vanilla APS will be suitable for a wide range of applications, including particle physics and biomedical imaging.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

DOE PAGES

Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.; ...

2016-07-21

We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering

PubMed Central

Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro

2017-01-01

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system. PMID:29120358

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Joel T.; Becker, Julian; Shanks, Katherine S.

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that formmore » when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.« less

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering.

PubMed

Mars, Kamel; Lioe, De Xing; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

2017-11-09

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

Laser doppler blood flow imaging using a CMOS imaging sensor with on-chip signal processing.

PubMed

He, Diwei; Nguyen, Hoang C; Hayes-Gill, Barrie R; Zhu, Yiqun; Crowe, John A; Gill, Cally; Clough, Geraldine F; Morgan, Stephen P

2013-09-18

The first fully integrated 2D CMOS imaging sensor with on-chip signal processing for applications in laser Doppler blood flow (LDBF) imaging has been designed and tested. To obtain a space efficient design over 64 × 64 pixels means that standard processing electronics used off-chip cannot be implemented. Therefore the analog signal processing at each pixel is a tailored design for LDBF signals with balanced optimization for signal-to-noise ratio and silicon area. This custom made sensor offers key advantages over conventional sensors, viz. the analog signal processing at the pixel level carries out signal normalization; the AC amplification in combination with an anti-aliasing filter allows analog-to-digital conversion with a low number of bits; low resource implementation of the digital processor enables on-chip processing and the data bottleneck that exists between the detector and processing electronics has been overcome. The sensor demonstrates good agreement with simulation at each design stage. The measured optical performance of the sensor is demonstrated using modulated light signals and in vivo blood flow experiments. Images showing blood flow changes with arterial occlusion and an inflammatory response to a histamine skin-prick demonstrate that the sensor array is capable of detecting blood flow signals from tissue.

Toward one Giga frames per second--evolution of in situ storage image sensors.

PubMed

Etoh, Takeharu G; Son, Dao V T; Yamada, Tetsuo; Charbon, Edoardo

2013-04-08

The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct intrusion of light and migration of signal electrons to the storage area on the frontside, a cross-sectional sensor structure with thick pnpn layers was developed, and named "Tetratified structure". By folding and looping in-pixel storage CCDs, an image signal accumulation sensor, ISAS, is proposed. The ISAS has a new function, the in-pixel signal accumulation, in addition to the ultra-high-speed imaging. To achieve much higher frame rate, a multi-collection-gate (MCG) BSI image sensor architecture is proposed. The photoreceptive area forms a honeycomb-like shape. Performance of a hexagonal CCD-type MCG BSI sensor is examined by simulations. The highest frame rate is theoretically more than 1Gfps. For the near future, a stacked hybrid CCD/CMOS MCG image sensor seems most promising. The associated problems are discussed. A fine TSV process is the key technology to realize the structure.

Camera-on-a-Chip

NASA Technical Reports Server (NTRS)

1999-01-01

Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.

High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

NASA Astrophysics Data System (ADS)

Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

2017-09-01

We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

Vision Sensors and Cameras

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Silicon charge-coupled-device (CCD) imagers have been and are a specialty market ruled by a few companies for decades. Based on CMOS technologies, active-pixel sensors (APS) began to appear in 1990 at the 1 μm technology node. These pixels allow random access, global shutters, and they are compatible with focal-plane imaging systems combining sensing and first-level image processing. The progress towards smaller features and towards ultra-low leakage currents has provided reduced dark currents and μm-size pixels. All chips offer Mega-pixel resolution, and many have very high sensitivities equivalent to ASA 12.800. As a result, HDTV video cameras will become a commodity. Because charge-integration sensors suffer from a limited dynamic range, significant processing effort is spent on multiple exposure and piece-wise analog-digital conversion to reach ranges >10,000:1. The fundamental alternative is log-converting pixels with an eye-like response. This offers a range of almost a million to 1, constant contrast sensitivity and constant colors, important features in professional, technical and medical applications. 3D retino-morphic stacking of sensing and processing on top of each other is being revisited with sub-100 nm CMOS circuits and with TSV technology. With sensor outputs directly on top of neurons, neural focal-plane processing will regain momentum, and new levels of intelligent vision will be achieved. The industry push towards thinned wafers and TSV enables backside-illuminated and other pixels with a 100% fill-factor. 3D vision, which relies on stereo or on time-of-flight, high-speed circuitry, will also benefit from scaled-down CMOS technologies both because of their size as well as their higher speed.

FITPix COMBO—Timepix detector with integrated analog signal spectrometric readout

NASA Astrophysics Data System (ADS)

Holik, M.; Kraus, V.; Georgiev, V.; Granja, C.

2016-02-01

The hybrid semiconductor pixel detector Timepix has proven a powerful tool in radiation detection and imaging. Energy loss and directional sensitivity as well as particle type resolving power are possible by high resolution particle tracking and per-pixel energy and quantum-counting capability. The spectrometric resolving power of the detector can be further enhanced by analyzing the analog signal of the detector common sensor electrode (also called back-side pulse). In this work we present a new compact readout interface, based on the FITPix readout architecture, extended with integrated analog electronics for the detector's common sensor signal. Integrating simultaneous operation of the digital per-pixel information with the common sensor (called also back-side electrode) analog pulse processing circuitry into one device enhances the detector capabilities and opens new applications. Thanks to noise suppression and built-in electromagnetic interference shielding the common hardware platform enables parallel analog signal spectroscopy on the back side pulse signal with full operation and read-out of the pixelated digital part, the noise level is 600 keV and spectrometric resolution around 100 keV for 5.5 MeV alpha particles. Self-triggering is implemented with delay of few tens of ns making use of adjustable low-energy threshold of the particle analog signal amplitude. The digital pixelated full frame can be thus triggered and recorded together with the common sensor analog signal. The waveform, which is sampled with frequency 100 MHz, can be recorded in adjustable time window including time prior to the trigger level. An integrated software tool provides control, on-line display and read-out of both analog and digital channels. Both the pixelated digital record and the analog waveform are synchronized and written out by common time stamp.

Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

2015-10-01

The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

High speed wide field CMOS camera for Transneptunian Automatic Occultation Survey

NASA Astrophysics Data System (ADS)

Wang, Shiang-Yu; Geary, John C.; Amato, Stephen M.; Hu, Yen-Sang; Ling, Hung-Hsu; Huang, Pin-Jie; Furesz, Gabor; Chen, Hsin-Yo; Chang, Yin-Chang; Szentgyorgyi, Andrew; Lehner, Matthew; Norton, Timothy

2014-08-01

The Transneptunian Automated Occultation Survey (TAOS II) is a three robotic telescope project to detect the stellar occultation events generated by Trans Neptunian Objects (TNOs). TAOS II project aims to monitor about 10000 stars simultaneously at 20Hz to enable statistically significant event rate. The TAOS II camera is designed to cover the 1.7 degree diameter field of view (FoV) of the 1.3m telescope with 10 mosaic 4.5kx2k CMOS sensors. The new CMOS sensor has a back illumination thinned structure and high sensitivity to provide similar performance to that of the backillumination thinned CCDs. The sensor provides two parallel and eight serial decoders so the region of interests can be addressed and read out separately through different output channels efficiently. The pixel scale is about 0.6"/pix with the 16μm pixels. The sensors, mounted on a single Invar plate, are cooled to the operation temperature of about 200K by a cryogenic cooler. The Invar plate is connected to the dewar body through a supporting ring with three G10 bipods. The deformation of the cold plate is less than 10μm to ensure the sensor surface is always within ±40μm of focus range. The control electronics consists of analog part and a Xilinx FPGA based digital circuit. For each field star, 8×8 pixels box will be readout. The pixel rate for each channel is about 1Mpix/s and the total pixel rate for each camera is about 80Mpix/s. The FPGA module will calculate the total flux and also the centroid coordinates for every field star in each exposure.

A real-time photogrammetric algorithm for sensor and synthetic image fusion with application to aviation combined vision

NASA Astrophysics Data System (ADS)

Lebedev, M. A.; Stepaniants, D. G.; Komarov, D. V.; Vygolov, O. V.; Vizilter, Yu. V.; Zheltov, S. Yu.

2014-08-01

The paper addresses a promising visualization concept related to combination of sensor and synthetic images in order to enhance situation awareness of a pilot during an aircraft landing. A real-time algorithm for a fusion of a sensor image, acquired by an onboard camera, and a synthetic 3D image of the external view, generated in an onboard computer, is proposed. The pixel correspondence between the sensor and the synthetic images is obtained by an exterior orientation of a "virtual" camera using runway points as a geospatial reference. The runway points are detected by the Projective Hough Transform, which idea is to project the edge map onto a horizontal plane in the object space (the runway plane) and then to calculate intensity projections of edge pixels on different directions of intensity gradient. The performed experiments on simulated images show that on a base glide path the algorithm provides image fusion with pixel accuracy, even in the case of significant navigation errors.

Further applications for mosaic pixel FPA technology

NASA Astrophysics Data System (ADS)

Liddiard, Kevin C.

2011-06-01

In previous papers to this SPIE forum the development of novel technology for next generation PIR security sensors has been described. This technology combines the mosaic pixel FPA concept with low cost optics and purpose-designed readout electronics to provide a higher performance and affordable alternative to current PIR sensor technology, including an imaging capability. Progressive development has resulted in increased performance and transition from conventional microbolometer fabrication to manufacture on 8 or 12 inch CMOS/MEMS fabrication lines. A number of spin-off applications have been identified. In this paper two specific applications are highlighted: high performance imaging IRFPA design and forest fire detection. The former involves optional design for small pixel high performance imaging. The latter involves cheap expendable sensors which can detect approaching fire fronts and send alarms with positional data via mobile phone or satellite link. We also introduce to this SPIE forum the application of microbolometer IR sensor technology to IoT, the Internet of Things.

Pixel-Level Digital-to-Analog Conversion Scheme with Compensation of Thin-Film-Transistor Variations for Compact Integrated Data Drivers of Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Tae-Wook; Park, Sang-Gyu; Choi, Byong-Deok

2011-03-01

The previous pixel-level digital-to-analog-conversion (DAC) scheme that implements a part of a DAC in a pixel circuit turned out to be very efficient for reducing the peripheral area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). However, how the pixel-level DAC can be compatible with the existing pixel circuits including compensation schemes of TFT variations and IR drops on supply rails, which is of primary importance for active matrix organic light emitting diodes (AMOLEDs) is an issue in this scheme, because LTPS TFTs suffer from random variations in their characteristics. In this paper, we show that the pixel-level DAC scheme can be successfully used with the previous compensation schemes by giving two examples of voltage- and current-programming pixels. The previous pixel-level DAC schemes require additional two TFTs and one capacitor, but for these newly proposed pixel circuits, the overhead is no more than two TFTs by utilizing the already existing capacitor. In addition, through a detailed analysis, it has been shown that the pixel-level DAC can be expanded to a 4-bit resolution, or be applied together with 1:2 demultiplexing driving for 6- to 8-in. diagonal XGA AMOLED display panels.

Evaluation of a single-pixel one-transistor active pixel sensor for fingerprint imaging

NASA Astrophysics Data System (ADS)

Xu, Man; Ou, Hai; Chen, Jun; Wang, Kai

2015-08-01

Since it first appeared in iPhone 5S in 2013, fingerprint identification (ID) has rapidly gained popularity among consumers. Current fingerprint-enabled smartphones unanimously consists of a discrete sensor to perform fingerprint ID. This architecture not only incurs higher material and manufacturing cost, but also provides only static identification and limited authentication. Hence as the demand for a thinner, lighter, and more secure handset grows, we propose a novel pixel architecture that is a photosensitive device embedded in a display pixel and detects the reflected light from the finger touch for high resolution, high fidelity and dynamic biometrics. To this purpose, an amorphous silicon (a-Si:H) dual-gate photo TFT working in both fingerprint-imaging mode and display-driving mode will be developed.

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

Design and implementation of non-linear image processing functions for CMOS image sensor

NASA Astrophysics Data System (ADS)

Musa, Purnawarman; Sudiro, Sunny A.; Wibowo, Eri P.; Harmanto, Suryadi; Paindavoine, Michel

2012-11-01

Today, solid state image sensors are used in many applications like in mobile phones, video surveillance systems, embedded medical imaging and industrial vision systems. These image sensors require the integration in the focal plane (or near the focal plane) of complex image processing algorithms. Such devices must meet the constraints related to the quality of acquired images, speed and performance of embedded processing, as well as low power consumption. To achieve these objectives, low-level analog processing allows extracting the useful information in the scene directly. For example, edge detection step followed by a local maxima extraction will facilitate the high-level processing like objects pattern recognition in a visual scene. Our goal was to design an intelligent image sensor prototype achieving high-speed image acquisition and non-linear image processing (like local minima and maxima calculations). For this purpose, we present in this article the design and test of a 64×64 pixels image sensor built in a standard CMOS Technology 0.35 μm including non-linear image processing. The architecture of our sensor, named nLiRIC (non-Linear Rapid Image Capture), is based on the implementation of an analog Minima/Maxima Unit. This MMU calculates the minimum and maximum values (non-linear functions), in real time, in a 2×2 pixels neighbourhood. Each MMU needs 52 transistors and the pitch of one pixel is 40×40 mu m. The total area of the 64×64 pixels is 12.5mm2. Our tests have shown the validity of the main functions of our new image sensor like fast image acquisition (10K frames per second), minima/maxima calculations in less then one ms.

Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels.

PubMed

Ballin, Jamie Alexander; Crooks, Jamie Phillip; Dauncey, Paul Dominic; Magnan, Anne-Marie; Mikami, Yoshiari; Miller, Owen Daniel; Noy, Matthew; Rajovic, Vladimir; Stanitzki, Marcel; Stefanov, Konstantin; Turchetta, Renato; Tyndel, Mike; Villani, Enrico Giulio; Watson, Nigel Keith; Wilson, John Allan

2008-09-02

In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 mm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to- Digital Conversion

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.; Fossum, Eric R.

1993-01-01

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS* 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e^- rms noise performance.

Neural Network for Image-to-Image Control of Optical Tweezers

NASA Technical Reports Server (NTRS)

Decker, Arthur J.; Anderson, Robert C.; Weiland, Kenneth E.; Wrbanek, Susan Y.

2004-01-01

A method is discussed for using neural networks to control optical tweezers. Neural-net outputs are combined with scaling and tiling to generate 480 by 480-pixel control patterns for a spatial light modulator (SLM). The SLM can be combined in various ways with a microscope to create movable tweezers traps with controllable profiles. The neural nets are intended to respond to scattered light from carbon and silicon carbide nanotube sensors. The nanotube sensors are to be held by the traps for manipulation and calibration. Scaling and tiling allow the 100 by 100-pixel maximum resolution of the neural-net software to be applied in stages to exploit the full 480 by 480-pixel resolution of the SLM. One of these stages is intended to create sensitive null detectors for detecting variations in the scattered light from the nanotube sensors.

ChromAIX2: A large area, high count-rate energy-resolving photon counting ASIC for a Spectral CT Prototype

NASA Astrophysics Data System (ADS)

Steadman, Roger; Herrmann, Christoph; Livne, Amir

2017-08-01

Spectral CT based on energy-resolving photon counting detectors is expected to deliver additional diagnostic value at a lower dose than current state-of-the-art CT [1]. The capability of simultaneously providing a number of spectrally distinct measurements not only allows distinguishing between photo-electric and Compton interactions but also discriminating contrast agents that exhibit a K-edge discontinuity in the absorption spectrum, referred to as K-edge Imaging [2]. Such detectors are based on direct converting sensors (e.g. CdTe or CdZnTe) and high-rate photon counting electronics. To support the development of Spectral CT and show the feasibility of obtaining rates exceeding 10 Mcps/pixel (Poissonian observed count-rate), the ChromAIX ASIC has been previously reported showing 13.5 Mcps/pixel (150 Mcps/mm2 incident) [3]. The ChromAIX has been improved to offer the possibility of a large area coverage detector, and increased overall performance. The new ASIC is called ChromAIX2, and delivers count-rates exceeding 15 Mcps/pixel with an rms-noise performance of approximately 260 e-. It has an isotropic pixel pitch of 500 μm in an array of 22×32 pixels and is tile-able on three of its sides. The pixel topology consists of a two stage amplifier (CSA and Shaper) and a number of test features allowing to thoroughly characterize the ASIC without a sensor. A total of 5 independent thresholds are also available within each pixel, allowing to acquire 5 spectrally distinct measurements simultaneously. The ASIC also incorporates a baseline restorer to eliminate excess currents induced by the sensor (e.g. dark current and low frequency drifts) which would otherwise cause an energy estimation error. In this paper we report on the inherent electrical performance of the ChromAXI2 as well as measurements obtained with CZT (CdZnTe)/CdTe sensors and X-rays and radioactive sources.

Event-based Sensing for Space Situational Awareness

NASA Astrophysics Data System (ADS)

Cohen, G.; Afshar, S.; van Schaik, A.; Wabnitz, A.; Bessell, T.; Rutten, M.; Morreale, B.

A revolutionary type of imaging device, known as a silicon retina or event-based sensor, has recently been developed and is gaining in popularity in the field of artificial vision systems. These devices are inspired by a biological retina and operate in a significantly different way to traditional CCD-based imaging sensors. While a CCD produces frames of pixel intensities, an event-based sensor produces a continuous stream of events, each of which is generated when a pixel detects a change in log light intensity. These pixels operate asynchronously and independently, producing an event-based output with high temporal resolution. There are also no fixed exposure times, allowing these devices to offer a very high dynamic range independently for each pixel. Additionally, these devices offer high-speed, low power operation and a sparse spatiotemporal output. As a consequence, the data from these sensors must be interpreted in a significantly different way to traditional imaging sensors and this paper explores the advantages this technology provides for space imaging. The applicability and capabilities of event-based sensors for SSA applications are demonstrated through telescope field trials. Trial results have confirmed that the devices are capable of observing resident space objects from LEO through to GEO orbital regimes. Significantly, observations of RSOs were made during both day-time and nighttime (terminator) conditions without modification to the camera or optics. The event based sensor’s ability to image stars and satellites during day-time hours offers a dramatic capability increase for terrestrial optical sensors. This paper shows the field testing and validation of two different architectures of event-based imaging sensors. An eventbased sensor’s asynchronous output has an intrinsically low data-rate. In addition to low-bandwidth communications requirements, the low weight, low-power and high-speed make them ideally suitable to meeting the demanding challenges required by space-based SSA systems. Results from these experiments and the systems developed highlight the applicability of event-based sensors to ground and space-based SSA tasks.

Fixed Pattern Noise pixel-wise linear correction for crime scene imaging CMOS sensor

NASA Astrophysics Data System (ADS)

Yang, Jie; Messinger, David W.; Dube, Roger R.; Ientilucci, Emmett J.

2017-05-01

Filtered multispectral imaging technique might be a potential method for crime scene documentation and evidence detection due to its abundant spectral information as well as non-contact and non-destructive nature. Low-cost and portable multispectral crime scene imaging device would be highly useful and efficient. The second generation crime scene imaging system uses CMOS imaging sensor to capture spatial scene and bandpass Interference Filters (IFs) to capture spectral information. Unfortunately CMOS sensors suffer from severe spatial non-uniformity compared to CCD sensors and the major cause is Fixed Pattern Noise (FPN). IFs suffer from "blue shift" effect and introduce spatial-spectral correlated errors. Therefore, Fixed Pattern Noise (FPN) correction is critical to enhance crime scene image quality and is also helpful for spatial-spectral noise de-correlation. In this paper, a pixel-wise linear radiance to Digital Count (DC) conversion model is constructed for crime scene imaging CMOS sensor. Pixel-wise conversion gain Gi,j and Dark Signal Non-Uniformity (DSNU) Zi,j are calculated. Also, conversion gain is divided into four components: FPN row component, FPN column component, defects component and effective photo response signal component. Conversion gain is then corrected to average FPN column and row components and defects component so that the sensor conversion gain is uniform. Based on corrected conversion gain and estimated image incident radiance from the reverse of pixel-wise linear radiance to DC model, corrected image spatial uniformity can be enhanced to 7 times as raw image, and the bigger the image DC value within its dynamic range, the better the enhancement.

Optical Demonstration of a Medical Imaging System with an EMCCD-Sensor Array for Use in a High Resolution Dynamic X-ray Imager

PubMed Central

Qu, Bin; Huang, Ying; Wang, Weiyuan; Sharma, Prateek; Kuhls-Gilcrist, Andrew T.; Cartwright, Alexander N.; Titus, Albert H.; Bednarek, Daniel R.; Rudin, Stephen

2011-01-01

Use of an extensible array of Electron Multiplying CCDs (EMCCDs) in medical x-ray imager applications was demonstrated for the first time. The large variable electronic-gain (up to 2000) and small pixel size of EMCCDs provide effective suppression of readout noise compared to signal, as well as high resolution, enabling the development of an x-ray detector with far superior performance compared to conventional x-ray image intensifiers and flat panel detectors. We are developing arrays of EMCCDs to overcome their limited field of view (FOV). In this work we report on an array of two EMCCD sensors running simultaneously at a high frame rate and optically focused on a mammogram film showing calcified ducts. The work was conducted on an optical table with a pulsed LED bar used to provide a uniform diffuse light onto the film to simulate x-ray projection images. The system can be selected to run at up to 17.5 frames per second or even higher frame rate with binning. Integration time for the sensors can be adjusted from 1 ms to 1000 ms. Twelve-bit correlated double sampling AD converters were used to digitize the images, which were acquired by a National Instruments dual-channel Camera Link PC board in real time. A user-friendly interface was programmed using LabVIEW to save and display 2K × 1K pixel matrix digital images. The demonstration tiles a 2 × 1 array to acquire increased-FOV stationary images taken at different gains and fluoroscopic-like videos recorded by scanning the mammogram simultaneously with both sensors. The results show high resolution and high dynamic range images stitched together with minimal adjustments needed. The EMCCD array design allows for expansion to an M×N array for arbitrarily larger FOV, yet with high resolution and large dynamic range maintained. PMID:23505330

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass.

PubMed

Han, Guoliang; Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-11-14

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0 . 15 ∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation.

Multiple Sensor Camera for Enhanced Video Capturing

NASA Astrophysics Data System (ADS)

Nagahara, Hajime; Kanki, Yoshinori; Iwai, Yoshio; Yachida, Masahiko

A resolution of camera has been drastically improved under a current request for high-quality digital images. For example, digital still camera has several mega pixels. Although a video camera has the higher frame-rate, the resolution of a video camera is lower than that of still camera. Thus, the high-resolution is incompatible with the high frame rate of ordinary cameras in market. It is difficult to solve this problem by a single sensor, since it comes from physical limitation of the pixel transfer rate. In this paper, we propose a multi-sensor camera for capturing a resolution and frame-rate enhanced video. Common multi-CCDs camera, such as 3CCD color camera, has same CCD for capturing different spectral information. Our approach is to use different spatio-temporal resolution sensors in a single camera cabinet for capturing higher resolution and frame-rate information separately. We build a prototype camera which can capture high-resolution (2588×1958 pixels, 3.75 fps) and high frame-rate (500×500, 90 fps) videos. We also proposed the calibration method for the camera. As one of the application of the camera, we demonstrate an enhanced video (2128×1952 pixels, 90 fps) generated from the captured videos for showing the utility of the camera.

Design and Calibration of a Novel Bio-Inspired Pixelated Polarized Light Compass

PubMed Central

Hu, Xiaoping; Lian, Junxiang; He, Xiaofeng; Zhang, Lilian; Wang, Yujie; Dong, Fengliang

2017-01-01

Animals, such as Savannah sparrows and North American monarch butterflies, are able to obtain compass information from skylight polarization patterns to help them navigate effectively and robustly. Inspired by excellent navigation ability of animals, this paper proposes a novel image-based polarized light compass, which has the advantages of having a small size and being light weight. Firstly, the polarized light compass, which is composed of a Charge Coupled Device (CCD) camera, a pixelated polarizer array and a wide-angle lens, is introduced. Secondly, the measurement method of a skylight polarization pattern and the orientation method based on a single scattering Rayleigh model are presented. Thirdly, the error model of the sensor, mainly including the response error of CCD pixels and the installation error of the pixelated polarizer, is established. A calibration method based on iterative least squares estimation is proposed. In the outdoor environment, the skylight polarization pattern can be measured in real time by our sensor. The orientation accuracy of the sensor increases with the decrease of the solar elevation angle, and the standard deviation of orientation error is 0.15∘ at sunset. Results of outdoor experiments show that the proposed polarization navigation sensor can be used for outdoor autonomous navigation. PMID:29135927

Readout of the upgraded ALICE-ITS

NASA Astrophysics Data System (ADS)

Szczepankiewicz, A.; ALICE Collaboration

2016-07-01

The ALICE experiment will undergo a major upgrade during the second long shutdown of the CERN LHC. As part of this program, the present Inner Tracking System (ITS), which employs different layers of hybrid pixels, silicon drift and strip detectors, will be replaced by a completely new tracker composed of seven layers of monolithic active pixel sensors. The upgraded ITS will have more than twelve billion pixels in total, producing 300 Gbit/s of data when tracking 50 kHz Pb-Pb events. Two families of pixel chips realized with the TowerJazz CMOS imaging process have been developed as candidate sensors: the ALPIDE, which uses a proprietary readout and sparsification mechanism and the MISTRAL-O, based on a proven rolling shutter architecture. Both chips can operate in continuous mode, with the ALPIDE also supporting triggered operations. As the communication IP blocks are shared among the two chip families, it has been possible to develop a common Readout Electronics. All the sensor components (analog stages, state machines, buffers, FIFOs, etc.) have been modelled in a system level simulation, which has been extensively used to optimize both the sensor and the whole readout chain design in an iterative process. This contribution covers the progress of the R&D efforts and the overall expected performance of the ALICE-ITS readout system.

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Light-controlled biphasic current stimulator IC using CMOS image sensors for high-resolution retinal prosthesis and in vitro experimental results with rd1 mouse.

PubMed

Oh, Sungjin; Ahn, Jae-Hyun; Lee, Sangmin; Ko, Hyoungho; Seo, Jong Mo; Goo, Yong-Sook; Cho, Dong-il Dan

2015-01-01

Retinal prosthetic devices stimulate retinal nerve cells with electrical signals proportional to the incident light intensities. For a high-resolution retinal prosthesis, it is necessary to reduce the size of the stimulator pixels as much as possible, because the retinal nerve cells are concentrated in a small area of approximately 5 mm × 5 mm. In this paper, a miniaturized biphasic current stimulator integrated circuit is developed for subretinal stimulation and tested in vitro. The stimulator pixel is miniaturized by using a complementary metal-oxide-semiconductor (CMOS) image sensor composed of three transistors. Compared to a pixel that uses a four-transistor CMOS image sensor, this new design reduces the pixel size by 8.3%. The pixel size is further reduced by simplifying the stimulation-current generating circuit, which provides a 43.9% size reduction when compared to the design reported to be the most advanced version to date for subretinal stimulation. The proposed design is fabricated using a 0.35 μm bipolar-CMOS-DMOS process. Each pixel is designed to fit in a 50 μ m × 55 μm area, which theoretically allows implementing more than 5000 pixels in the 5 mm × 5 mm area. Experimental results show that a biphasic current in the range of 0 to 300 μA at 12 V can be generated as a function of incident light intensities. Results from in vitro experiments with rd1 mice indicate that the proposed method can be effectively used for retinal prosthesis with a high resolution.

Timing Results Using an FPGA-Based TDC with Large Arrays of 144 SiPMs

NASA Astrophysics Data System (ADS)

Aguilar, A.; González, A. J.; Torres, J.; García-Olcina, R.; Martos, J.; Soret, J.; Conde, P.; Hernández, L.; Sánchez, F.; Benlloch, J. M.

2015-02-01

Silicon photomultipliers (SiPMs) have become an alternative to traditional tubes due to several features. However, their implementation to form large arrays is still a challenge especially due to their relatively high intrinsic noise, depending on the chosen readout. In this contribution, two modules composed of 12 ×12 SiPMs with an area of roughly 50 mm×50 mm are used in coincidence. Coincidence resolving time (CRT) results with a field-programmable gate array, in combination with a time to digital converter, are shown as a function of both the sensor bias voltage and the digitizer threshold. The dependence of the CRT on the sensor matrix temperature, the amount of SiPM active area and the crystal type is also analyzed. Measurements carried out with a crystal array of 2 mm pixel size and 10 mm height have shown time resolutions for the entire 288 SiPM two-detector set-up as good as 800 ps full width at half maximum (FWHM).

Analysis of digital images into energy-angular momentum modes.

PubMed

Vicent, Luis Edgar; Wolf, Kurt Bernardo

2011-05-01

The measurement of continuous wave fields by a digital (pixellated) screen of sensors can be used to assess the quality of a beam by finding its formant modes. A generic continuous field F(x, y) sampled at an N × N Cartesian grid of point sensors on a plane yields a matrix of values F(q(x), q(y)), where (q(x), q(y)) are integer coordinates. When the approximate rotational symmetry of the input field is important, one may use the sampled Laguerre-Gauss functions, with radial and angular modes (n, m), to analyze them into their corresponding coefficients F(n, m) of energy and angular momentum (E-AM). The sampled E-AM modes span an N²-dimensional space, but are not orthogonal--except for parity. In this paper, we propose the properly orthonormal "Laguerre-Kravchuk" discrete functions Λ(n, m)(q(x), q(y)) as a convenient basis to analyze the sampled beams into their E-AM polar modes, and with them synthesize the input image exactly.

Hit efficiency study of CMS prototype forward pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dongwook; /Johns Hopkins U.

2006-01-01

In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

Miniature Wide-Angle Lens for Small-Pixel Electronic Camera

NASA Technical Reports Server (NTRS)

Mouroulils, Pantazis; Blazejewski, Edward

2009-01-01

A proposed wideangle lens is shown that would be especially well suited for an electronic camera in which the focal plane is occupied by an image sensor that has small pixels. The design of the lens is intended to satisfy requirements for compactness, high image quality, and reasonably low cost, while addressing issues peculiar to the operation of small-pixel image sensors. Hence, this design is expected to enable the development of a new generation of compact, high-performance electronic cameras. The lens example shown has a 60 degree field of view and a relative aperture (f-number) of 3.2. The main issues affecting the design are also shown.

Development of X-Ray Microcalorimeter Imaging Spectrometers for the X-Ray Surveyor Mission Concept

NASA Technical Reports Server (NTRS)

Bandler, Simon R.; Adams, Joseph S.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Betncourt-Martinez, Gabriele; Miniussi, Antoine R.;

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

PubMed

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

Plasma-panel based detectors

NASA Astrophysics Data System (ADS)

Friedman, Peter

2017-09-01

The plasma panel sensor (PPS) is a novel micropattern gas detector inspired by plasma display panels (PDPs), the core component of plasma-TVs. A PDP comprises millions of discrete cells per square meter, each of which, when provided with a signal pulse, can initiate and sustain a plasma discharge. Configured as a detector, a pixel or cell is biased to discharge when a free-electron is generated in the gas. The PPS consists of an array of small plasma discharge pixels, and can be configured to have either an ``open-cell'' or ``closed-cell'' structure, operating with high gain in the Geiger region. We describe both configurations and their application to particle physics. The open-cell PPS lends itself to ultra-low-mass, ultrathin structures, whereas the closed-cell microhexcavity PPS is capable of higher performance. For the ultrathin-PPS, we are fabricating 3-inch devices based on two types of extremely thin, inorganic, transparent, substrate materials: one being 8-10 µm thick, and the other 25-27 µm thick. These gas-filled ultrathin devices are designed to operate in a beam-line vacuum environment, yet must be hermetically-sealed and gas-filled in an ambient environment at atmospheric pressure. We have successfully fabricated high resolution, submillimeter pixel electrodes on both types of ultrathin substrates. We will also report on the fabrication, staging and operation of the first microhexcavity detectors (µH-PPS). The first µH-PPS prototype devices have a 16 by 16 matrix of closed packed hexagon pixels, each having a 2 mm width. Initial tests of these detectors, conducted with Ne based gases at atmospheric pressure, indicate that each pixel responds independent of its neighboring cells, producing volt level pulse amplitudes in response to ionizing radiation. Results will include the hit rate response to a radioactive beta source, cosmic ray muons, the background from spontaneous discharge, pixel isolation and uniformity, and efficiency measurements. This work was funded in part by a DOE Office of Nuclear Physics SBIR Phase-II Grant.

Image quality evaluation of color displays using a Fovean color camera

NASA Astrophysics Data System (ADS)

Roehrig, Hans; Dallas, William J.; Fan, Jiahua; Krupinski, Elizabeth A.; Redford, Gary R.; Yoneda, Takahiro

2007-03-01

This paper presents preliminary data on the use of a color camera for the evaluation of Quality Control (QC) and Quality Analysis (QA) of a color LCD in comparison with that of a monochrome LCD. The color camera is a C-MOS camera with a pixel size of 9 µm and a pixel matrix of 2268 × 1512 × 3. The camera uses a sensor that has co-located pixels for all three primary colors. The imaging geometry used mostly was 12 × 12 camera pixels per display pixel even though it appears that an imaging geometry of 17.6 might provide results which are more accurate. The color camera is used as an imaging colorimeter, where each camera pixel is calibrated to serve as a colorimeter. This capability permits the camera to determine chromaticity of the color LCD at different sections of the display. After the color calibration with a CS-200 colorimeter the color coordinates of the display's primaries determined from the camera's luminance response are very close to those found from the CS-200. Only the color coordinates of the display's white point were in error. Modulation Transfer Function (MTF) as well as Noise in terms of the Noise Power Spectrum (NPS) of both LCDs were evaluated. The horizontal MTFs of both displays have a larger negative slope than the vertical MTFs, indicating that the horizontal MTFs are poorer than the vertical MTFs. However the modulations at the Nyquist frequency seem lower for the color LCD than for the monochrome LCD. These results contradict simulations regarding MTFs in the vertical direction. The spatial noise of the color display in both directions are larger than that of the monochrome display. Attempts were also made to analyze the total noise in terms of spatial and temporal noise by applying subtractions of images taken at exactly the same exposure. Temporal noise seems to be significantly lower than spatial noise.

Measurements and simulations of MAPS (Monolithic Active Pixel Sensors) response to charged particles - a study towards a vertex detector at the ILC

NASA Astrophysics Data System (ADS)

Maczewski, Lukasz

2010-05-01

The International Linear Collider (ILC) is a project of an electron-positron (e+e-) linear collider with the centre-of-mass energy of 200-500 GeV. Monolithic Active Pixel Sensors (MAPS) are one of the proposed silicon pixel detector concepts for the ILC vertex detector (VTX). Basic characteristics of two MAPS pixel matrices MIMOSA-5 (17 μm pixel pitch) and MIMOSA-18 (10 μm pixel pitch) are studied and compared (pedestals, noises, calibration of the ADC-to-electron conversion gain, detector efficiency and charge collection properties). The e+e- collisions at the ILC will be accompanied by intense beamsstrahlung background of electrons and positrons hitting inner planes of the vertex detector. Tracks of this origin leave elongated clusters contrary to those of secondary hadrons. Cluster characteristics and orientation with respect to the pixels netting are studied for perpendicular and inclined tracks. Elongation and precision of determining the cluster orientation as a function of the angle of incidence were measured. A simple model of signal formation (based on charge diffusion) is proposed and tested using the collected data.

Pixelated coatings and advanced IR coatings

NASA Astrophysics Data System (ADS)

Pradal, Fabien; Portier, Benjamin; Oussalah, Meihdi; Leplan, Hervé

2017-09-01

Reosc developed pixelated infrared coatings on detector. Reosc manufactured thick pixelated multilayer stacks on IR-focal plane arrays for bi-spectral imaging systems, demonstrating high filter performance, low crosstalk, and no deterioration of the device sensitivities. More recently, a 5-pixel filter matrix was designed and fabricated. Recent developments in pixelated coatings, shows that high performance infrared filters can be coated directly on detector for multispectral imaging. Next generation space instrument can benefit from this technology to reduce their weight and consumptions.

Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Kyung-Wook; Bradford, Robert; Lipton, Ronald

2016-10-06

FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intendedmore » $$\\mbox{13 $$MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $$10^{\\text{5}}$$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.« less

Color filter array pattern identification using variance of color difference image

NASA Astrophysics Data System (ADS)

Shin, Hyun Jun; Jeon, Jong Ju; Eom, Il Kyu

2017-07-01

A color filter array is placed on the image sensor of a digital camera to acquire color images. Each pixel uses only one color, since the image sensor can measure only one color per pixel. Therefore, empty pixels are filled using an interpolation process called demosaicing. The original and the interpolated pixels have different statistical characteristics. If the image is modified by manipulation or forgery, the color filter array pattern is altered. This pattern change can be a clue for image forgery detection. However, most forgery detection algorithms have the disadvantage of assuming the color filter array pattern. We present an identification method of the color filter array pattern. Initially, the local mean is eliminated to remove the background effect. Subsequently, the color difference block is constructed to emphasize the difference between the original pixel and the interpolated pixel. The variance measure of the color difference image is proposed as a means of estimating the color filter array configuration. The experimental results show that the proposed method is effective in identifying the color filter array pattern. Compared with conventional methods, our method provides superior performance.

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

PubMed

Elbakri, I A; McIntosh, B J; Rickey, D W

2009-03-21

We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result.

An Omnidirectional Vision Sensor Based on a Spherical Mirror Catadioptric System.

PubMed

Barone, Sandro; Carulli, Marina; Neri, Paolo; Paoli, Alessandro; Razionale, Armando Viviano

2018-01-31

The combination of mirrors and lenses, which defines a catadioptric sensor, is widely used in the computer vision field. The definition of a catadioptric sensors is based on three main features: hardware setup, projection modelling and calibration process. In this paper, a complete description of these aspects is given for an omnidirectional sensor based on a spherical mirror. The projection model of a catadioptric system can be described by the forward projection task (FP, from 3D scene point to 2D pixel coordinates) and backward projection task (BP, from 2D coordinates to 3D direction of the incident light). The forward projection of non-central catadioptric vision systems, typically obtained by using curved mirrors, is usually modelled by using a central approximation and/or by adopting iterative approaches. In this paper, an analytical closed-form solution to compute both forward and backward projection for a non-central catadioptric system with a spherical mirror is presented. In particular, the forward projection is reduced to a 4th order polynomial by determining the reflection point on the mirror surface through the intersection between a sphere and an ellipse. A matrix format of the implemented models, suitable for fast point clouds handling, is also described. A robust calibration procedure is also proposed and applied to calibrate a catadioptric sensor by determining the mirror radius and center with respect to the camera.

An Omnidirectional Vision Sensor Based on a Spherical Mirror Catadioptric System

PubMed Central

Barone, Sandro; Carulli, Marina; Razionale, Armando Viviano

2018-01-01

The combination of mirrors and lenses, which defines a catadioptric sensor, is widely used in the computer vision field. The definition of a catadioptric sensors is based on three main features: hardware setup, projection modelling and calibration process. In this paper, a complete description of these aspects is given for an omnidirectional sensor based on a spherical mirror. The projection model of a catadioptric system can be described by the forward projection task (FP, from 3D scene point to 2D pixel coordinates) and backward projection task (BP, from 2D coordinates to 3D direction of the incident light). The forward projection of non-central catadioptric vision systems, typically obtained by using curved mirrors, is usually modelled by using a central approximation and/or by adopting iterative approaches. In this paper, an analytical closed-form solution to compute both forward and backward projection for a non-central catadioptric system with a spherical mirror is presented. In particular, the forward projection is reduced to a 4th order polynomial by determining the reflection point on the mirror surface through the intersection between a sphere and an ellipse. A matrix format of the implemented models, suitable for fast point clouds handling, is also described. A robust calibration procedure is also proposed and applied to calibrate a catadioptric sensor by determining the mirror radius and center with respect to the camera. PMID:29385051

Integrated sensor with frame memory and programmable resolution for light adaptive imaging

NASA Technical Reports Server (NTRS)

Zhou, Zhimin (Inventor); Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

2004-01-01

An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

Smartphone Based Platform for Colorimetric Sensing of Dyes

NASA Astrophysics Data System (ADS)

Dutta, Sibasish; Nath, Pabitra

We demonstrate the working of a smartphone based optical sensor for measuring absorption band of coloured dyes. By integration of simple laboratory optical components with the camera unit of the smartphone we have converted it into a visible spectrometer with a pixel resolution of 0.345 nm/pixel. Light from a broadband optical source is allowed to transmit through a specific dye solution. The transmitted light signal is captured by the camera of the smartphone. The present sensor is inexpensive, portable and light weight making it an ideal handy sensor suitable for different on-field sensing.

AVIRIS calibration using the cloud-shadow method

NASA Technical Reports Server (NTRS)

Carder, K. L.; Reinersman, P.; Chen, R. F.

1993-01-01

More than 90 percent of the signal at an ocean-viewing, satellite sensor is due to the atmosphere, so a 5 percent sensor-calibration error viewing a target that contributes but 10 percent of the signal received at the sensor may result in a target-reflectance error of more than 50 percent. Since prelaunch calibration accuracies of 5 percent are typical of space-sensor requirements, recalibration of the sensor using ground-base methods is required for low-signal target. Known target reflectance or water-leaving radiance spectra and atmospheric correction parameters are required. In this article we describe an atmospheric-correction method that uses cloud shadowed pixels in combination with pixels in a neighborhood region of similar optical properties to remove atmospheric effects from ocean scenes. These neighboring pixels can then be used as known reflectance targets for validation of the sensor calibration and atmospheric correction. The method uses the difference between water-leaving radiance values for these two regions. This allows nearly identical optical contributions to the two signals (e.g., path radiance and Fresnel-reflected skylight) to be removed, leaving mostly solar photons backscattered from beneath the sea to dominate the residual signal. Normalization by incident solar irradiance reaching the sea surface provides the remote-sensing reflectance of the ocean at the location of the neighbor region.

Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

PubMed

Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

2015-03-01

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

Ultra-low power high-dynamic range color pixel embedding RGB to r-g chromaticity transformation

NASA Astrophysics Data System (ADS)

Lecca, Michela; Gasparini, Leonardo; Gottardi, Massimo

2014-05-01

This work describes a novel color pixel topology that converts the three chromatic components from the standard RGB space into the normalized r-g chromaticity space. This conversion is implemented with high-dynamic range and with no dc power consumption, and the auto-exposure capability of the sensor ensures to capture a high quality chromatic signal, even in presence of very bright illuminants or in the darkness. The pixel is intended to become the basic building block of a CMOS color vision sensor, targeted to ultra-low power applications for mobile devices, such as human machine interfaces, gesture recognition, face detection. The experiments show that significant improvements of the proposed pixel with respect to standard cameras in terms of energy saving and accuracy on data acquisition. An application to skin color-based description is presented.

On the possibility to use semiconductive hybrid pixel detectors for study of radiation belt of the Earth.

NASA Astrophysics Data System (ADS)

Guskov, A.; Shelkov, G.; Smolyanskiy, P.; Zhemchugov, A.

2016-02-01

The scientific apparatus GAMMA-400 designed for study of electromagnetic and hadron components of cosmic rays will be launched to an elliptic orbit with the apogee of about 300 000 km and the perigee of about 500 km. Such a configuration of the orbit allows it to cross periodically the radiation belt and the outer part of magnetosphere. We discuss the possibility to use hybrid pixel detecters based on the Timepix chip and semiconductive sensors on board the GAMMA-400 apparatus. Due to high granularity of the sensor (pixel size is 55 mum) and possibility to measure independently an energy deposition in each pixel, such compact and lightweight detector could be a unique instrument for study of spatial, energy and time structure of electron and proton components of the radiation belt.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Domengie, F., E-mail: florian.domengie@st.com; Morin, P.; Bauza, D.

We propose a model for dark current induced by metallic contamination in a CMOS image sensor. Based on Shockley-Read-Hall kinetics, the expression of dark current proposed accounts for the electric field enhanced emission factor due to the Poole-Frenkel barrier lowering and phonon-assisted tunneling mechanisms. To that aim, we considered the distribution of the electric field magnitude and metal atoms in the depth of the pixel. Poisson statistics were used to estimate the random distribution of metal atoms in each pixel for a given contamination dose. Then, we performed a Monte-Carlo-based simulation for each pixel to set the number of metalmore » atoms the pixel contained and the enhancement factor each atom underwent, and obtained a histogram of the number of pixels versus dark current for the full sensor. Excellent agreement with the dark current histogram measured on an ion-implanted gold-contaminated imager has been achieved, in particular, for the description of the distribution tails due to the pixel regions in which the contaminant atoms undergo a large electric field. The agreement remains very good when increasing the temperature by 15 °C. We demonstrated that the amplification of the dark current generated for the typical electric fields encountered in the CMOS image sensors, which depends on the nature of the metal contaminant, may become very large at high electric field. The electron and hole emissions and the resulting enhancement factor are described as a function of the trap characteristics, electric field, and temperature.« less

Compressive hyperspectral sensor for LWIR gas detection

NASA Astrophysics Data System (ADS)

Russell, Thomas A.; McMackin, Lenore; Bridge, Bob; Baraniuk, Richard

2012-06-01

Focal plane arrays with associated electronics and cooling are a substantial portion of the cost, complexity, size, weight, and power requirements of Long-Wave IR (LWIR) imagers. Hyperspectral LWIR imagers add significant data volume burden as they collect a high-resolution spectrum at each pixel. We report here on a LWIR Hyperspectral Sensor that applies Compressive Sensing (CS) in order to achieve benefits in these areas. The sensor applies single-pixel detection technology demonstrated by Rice University. The single-pixel approach uses a Digital Micro-mirror Device (DMD) to reflect and multiplex the light from a random assortment of pixels onto the detector. This is repeated for a number of measurements much less than the total number of scene pixels. We have extended this architecture to hyperspectral LWIR sensing by inserting a Fabry-Perot spectrometer in the optical path. This compressive hyperspectral imager collects all three dimensions on a single detection element, greatly reducing the size, weight and power requirements of the system relative to traditional approaches, while also reducing data volume. The CS architecture also supports innovative adaptive approaches to sensing, as the DMD device allows control over the selection of spatial scene pixels to be multiplexed on the detector. We are applying this advantage to the detection of plume gases, by adaptively locating and concentrating target energy. A key challenge in this system is the diffraction loss produce by the DMD in the LWIR. We report the results of testing DMD operation in the LWIR, as well as system spatial and spectral performance.

Precise color images a high-speed color video camera system with three intensified sensors

NASA Astrophysics Data System (ADS)

Oki, Sachio; Yamakawa, Masafumi; Gohda, Susumu; Etoh, Takeharu G.

1999-06-01

High speed imaging systems have been used in a large field of science and engineering. Although the high speed camera systems have been improved to high performance, most of their applications are only to get high speed motion pictures. However, in some fields of science and technology, it is useful to get some other information, such as temperature of combustion flame, thermal plasma and molten materials. Recent digital high speed video imaging technology should be able to get such information from those objects. For this purpose, we have already developed a high speed video camera system with three-intensified-sensors and cubic prism image splitter. The maximum frame rate is 40,500 pps (picture per second) at 64 X 64 pixels and 4,500 pps at 256 X 256 pixels with 256 (8 bit) intensity resolution for each pixel. The camera system can store more than 1,000 pictures continuously in solid state memory. In order to get the precise color images from this camera system, we need to develop a digital technique, which consists of a computer program and ancillary instruments, to adjust displacement of images taken from two or three image sensors and to calibrate relationship between incident light intensity and corresponding digital output signals. In this paper, the digital technique for pixel-based displacement adjustment are proposed. Although the displacement of the corresponding circle was more than 8 pixels in original image, the displacement was adjusted within 0.2 pixels at most by this method.

Computation of dark frames in digital imagers

NASA Astrophysics Data System (ADS)

Widenhorn, Ralf; Rest, Armin; Blouke, Morley M.; Berry, Richard L.; Bodegom, Erik

2007-02-01

Dark current is caused by electrons that are thermally exited into the conduction band. These electrons are collected by the well of the CCD and add a false signal to the chip. We will present an algorithm that automatically corrects for dark current. It uses a calibration protocol to characterize the image sensor for different temperatures. For a given exposure time, the dark current of every pixel is characteristic of a specific temperature. The dark current of every pixel can therefore be used as an indicator of the temperature. Hot pixels have the highest signal-to-noise ratio and are the best temperature sensors. We use the dark current of a several hundred hot pixels to sense the chip temperature and predict the dark current of all pixels on the chip. Dark current computation is not a new concept, but our approach is unique. Some advantages of our method include applicability for poorly temperature-controlled camera systems and the possibility of ex post facto dark current correction.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

PubMed Central

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

PubMed Central

Ballin, Jamie Alexander; Crooks, Jamie Phillip; Dauncey, Paul Dominic; Magnan, Anne-Marie; Mikami, Yoshinari; Miller, Owen Daniel; Noy, Matthew; Rajovic, Vladimir; Stanitzki, Marcel; Stefanov, Konstantin; Turchetta, Renato; Tyndel, Mike; Villani, Enrico Giulio; Watson, Nigel Keith; Wilson, John Allan

2008-01-01

In this paper we present a novel, quadruple well process developed in a modern 0.18 μm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency. PMID:27873817

Single-event transient imaging with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor.

PubMed

Mochizuki, Futa; Kagawa, Keiichiro; Okihara, Shin-ichiro; Seo, Min-Woong; Zhang, Bo; Takasawa, Taishi; Yasutomi, Keita; Kawahito, Shoji

2016-02-22

In the work described in this paper, an image reproduction scheme with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor was demonstrated. The sensor captures an object by compressing a sequence of images with focal-plane temporally random-coded shutters, followed by reconstruction of time-resolved images. Because signals are modulated pixel-by-pixel during capturing, the maximum frame rate is defined only by the charge transfer speed and can thus be higher than those of conventional ultra-high-speed cameras. The frame rate and optical efficiency of the multi-aperture scheme are discussed. To demonstrate the proposed imaging method, a 5×3 multi-aperture image sensor was fabricated. The average rising and falling times of the shutters were 1.53 ns and 1.69 ns, respectively. The maximum skew among the shutters was 3 ns. The sensor observed plasma emission by compressing it to 15 frames, and a series of 32 images at 200 Mfps was reconstructed. In the experiment, by correcting disparities and considering temporal pixel responses, artifacts in the reconstructed images were reduced. An improvement in PSNR from 25.8 dB to 30.8 dB was confirmed in simulations.

Status of HVCMOS developments for ATLAS

NASA Astrophysics Data System (ADS)

Perić, I.; Blanco, R.; Casanova Mohr, R.; Ehrler, F.; Guezzi Messaoud, F.; Krämer, C.; Leys, R.; Prathapan, M.; Schimassek, R.; Schöning, A.; Vilella Figueras, E.; Weber, A.; Zhang, H.

2017-02-01

This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. The sensors have been implemented in three semiconductor processes AMS H18, AMS H35 and LFoundry LFA15. Efficiency of 99.7% after neutron irradiation to 1015 neq/cm2W has been measured with the small area CCPD prototype in AMS H18 technology. About 84% of the particles are detected with a time resolution better than 25 ns. The sensor was implemented on a low resistivity substrate. The large area demonstrator sensor in AMS H35 process has been designed, produced and successfully tested. The sensor has been produced on different high resistivity substrates ranging from 80 Ωcm to more than 1 kΩ. Monolithic- and hybrid readout are both possible. In August 2016, six different monolithic pixel matrices for ATLAS with a total area of 1 cm2 have been submitted in LFoundry LFA15 process. The matrices implement column drain and triggered readout as well as waveform sampling capability on pixel level. Design details will be presented.

Multiocular image sensor with on-chip beam-splitter and inner meta-micro-lens for single-main-lens stereo camera.

PubMed

Koyama, Shinzo; Onozawa, Kazutoshi; Tanaka, Keisuke; Saito, Shigeru; Kourkouss, Sahim Mohamed; Kato, Yoshihisa

2016-08-08

We developed multiocular 1/3-inch 2.75-μm-pixel-size 2.1M- pixel image sensors by co-design of both on-chip beam-splitter and 100-nm-width 800-nm-depth patterned inner meta-micro-lens for single-main-lens stereo camera systems. A camera with the multiocular image sensor can capture horizontally one-dimensional light filed by both the on-chip beam-splitter horizontally dividing ray according to incident angle, and the inner meta-micro-lens collecting the divided ray into pixel with small optical loss. Cross-talks between adjacent light field images of a fabricated binocular image sensor and of a quad-ocular image sensor are as low as 6% and 7% respectively. With the selection of two images from one-dimensional light filed images, a selective baseline for stereo vision is realized to view close objects with single-main-lens. In addition, by adding multiple light field images with different ratios, baseline distance can be tuned within an aperture of a main lens. We suggest the electrically selective or tunable baseline stereo vision to reduce 3D fatigue of viewers.

Plenoptic camera image simulation for reconstruction algorithm verification

NASA Astrophysics Data System (ADS)

Schwiegerling, Jim

2014-09-01

Plenoptic cameras have emerged in recent years as a technology for capturing light field data in a single snapshot. A conventional digital camera can be modified with the addition of a lenslet array to create a plenoptic camera. Two distinct camera forms have been proposed in the literature. The first has the camera image focused onto the lenslet array. The lenslet array is placed over the camera sensor such that each lenslet forms an image of the exit pupil onto the sensor. The second plenoptic form has the lenslet array relaying the image formed by the camera lens to the sensor. We have developed a raytracing package that can simulate images formed by a generalized version of the plenoptic camera. Several rays from each sensor pixel are traced backwards through the system to define a cone of rays emanating from the entrance pupil of the camera lens. Objects that lie within this cone are integrated to lead to a color and exposure level for that pixel. To speed processing three-dimensional objects are approximated as a series of planes at different depths. Repeating this process for each pixel in the sensor leads to a simulated plenoptic image on which different reconstruction algorithms can be tested.

Self-powered vision electronic-skin basing on piezo-photodetecting Ppy/PVDF pixel-patterned matrix for mimicking vision.

PubMed

Han, Wuxiao; Zhang, Linlin; He, Haoxuan; Liu, Hongmin; Xing, Lili; Xue, Xinyu

2018-06-22

The development of multifunctional electronic-skin that establishes human-machine interfaces, enhances perception abilities or has other distinct biomedical applications is the key to the realization of artificial intelligence. In this paper, a new self-powered (battery-free) flexible vision electronic-skin has been realized from pixel-patterned matrix of piezo-photodetecting PVDF/Ppy film. The electronic-skin under applied deformation can actively output piezoelectric voltage, and the outputting signal can be significantly influenced by UV illumination. The piezoelectric output can act as both the photodetecting signal and electricity power. The reliability is demonstrated over 200 light on-off cycles. The sensing unit matrix of 6 × 6 pixels on the electronic-skin can realize image recognition through mapping multi-point UV stimuli. This self-powered vision electronic-skin that simply mimics human retina may have potential application in vision substitution.

Self-powered vision electronic-skin basing on piezo-photodetecting Ppy/PVDF pixel-patterned matrix for mimicking vision

NASA Astrophysics Data System (ADS)

Han, Wuxiao; Zhang, Linlin; He, Haoxuan; Liu, Hongmin; Xing, Lili; Xue, Xinyu

2018-06-01

The development of multifunctional electronic-skin that establishes human-machine interfaces, enhances perception abilities or has other distinct biomedical applications is the key to the realization of artificial intelligence. In this paper, a new self-powered (battery-free) flexible vision electronic-skin has been realized from pixel-patterned matrix of piezo-photodetecting PVDF/Ppy film. The electronic-skin under applied deformation can actively output piezoelectric voltage, and the outputting signal can be significantly influenced by UV illumination. The piezoelectric output can act as both the photodetecting signal and electricity power. The reliability is demonstrated over 200 light on–off cycles. The sensing unit matrix of 6 × 6 pixels on the electronic-skin can realize image recognition through mapping multi-point UV stimuli. This self-powered vision electronic-skin that simply mimics human retina may have potential application in vision substitution.

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays.

PubMed

Yao, Lei; Yung, Ka Yi; Khan, Rifat; Chodavarapu, Vamsy P; Bright, Frank V

2010-12-01

We present the design and implementation of a luminescence-based miniaturized multisensor system using pin-printed xerogel materials which act as host media for chemical recognition elements. We developed a CMOS imager integrated circuit (IC) to image the luminescence response of the xerogel-based sensor array. The imager IC uses a 26 × 20 (520 elements) array of active pixel sensors and each active pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. The imager includes a correlated double sampling circuit and pixel address/digital control circuit; the image data is read-out as coded serial signal. The sensor system uses a light-emitting diode (LED) to excite the target analyte responsive luminophores doped within discrete xerogel-based sensor elements. As a prototype, we developed a 4 × 4 (16 elements) array of oxygen (O 2 ) sensors. Each group of 4 sensor elements in the array (arranged in a row) is designed to provide a different and specific sensitivity to the target gaseous O 2 concentration. This property of multiple sensitivities is achieved by using a strategic mix of two oxygen sensitive luminophores ([Ru(dpp) 3 ] 2+ and ([Ru(bpy) 3 ] 2+ ) in each pin-printed xerogel sensor element. The CMOS imager consumes an average power of 8 mW operating at 1 kHz sampling frequency driven at 5 V. The developed prototype system demonstrates a low cost and miniaturized luminescence multisensor system.

Assessment and Prediction of Natural Hazards from Satellite Imagery

PubMed Central

Gillespie, Thomas W.; Chu, Jasmine; Frankenberg, Elizabeth; Thomas, Duncan

2013-01-01

Since 2000, there have been a number of spaceborne satellites that have changed the way we assess and predict natural hazards. These satellites are able to quantify physical geographic phenomena associated with the movements of the earth’s surface (earthquakes, mass movements), water (floods, tsunamis, storms), and fire (wildfires). Most of these satellites contain active or passive sensors that can be utilized by the scientific community for the remote sensing of natural hazards over a number of spatial and temporal scales. The most useful satellite imagery for the assessment of earthquake damage comes from high-resolution (0.6 m to 1 m pixel size) passive sensors and moderate resolution active sensors that can quantify the vertical and horizontal movement of the earth’s surface. High-resolution passive sensors have been used to successfully assess flood damage while predictive maps of flood vulnerability areas are possible based on physical variables collected from passive and active sensors. Recent moderate resolution sensors are able to provide near real time data on fires and provide quantitative data used in fire behavior models. Limitations currently exist due to atmospheric interference, pixel resolution, and revisit times. However, a number of new microsatellites and constellations of satellites will be launched in the next five years that contain increased resolution (0.5 m to 1 m pixel resolution for active sensors) and revisit times (daily ≤ 2.5 m resolution images from passive sensors) that will significantly improve our ability to assess and predict natural hazards from space. PMID:25170186

Fusion: ultra-high-speed and IR image sensors

NASA Astrophysics Data System (ADS)

Etoh, T. Goji; Dao, V. T. S.; Nguyen, Quang A.; Kimata, M.

2015-08-01

Most targets of ultra-high-speed video cameras operating at more than 1 Mfps, such as combustion, crack propagation, collision, plasma, spark discharge, an air bag at a car accident and a tire under a sudden brake, generate sudden heat. Researchers in these fields require tools to measure the high-speed motion and heat simultaneously. Ultra-high frame rate imaging is achieved by an in-situ storage image sensor. Each pixel of the sensor is equipped with multiple memory elements to record a series of image signals simultaneously at all pixels. Image signals stored in each pixel are read out after an image capturing operation. In 2002, we developed an in-situ storage image sensor operating at 1 Mfps 1). However, the fill factor of the sensor was only 15% due to a light shield covering the wide in-situ storage area. Therefore, in 2011, we developed a backside illuminated (BSI) in-situ storage image sensor to increase the sensitivity with 100% fill factor and a very high quantum efficiency 2). The sensor also achieved a much higher frame rate,16.7 Mfps, thanks to the wiring on the front side with more freedom 3). The BSI structure has another advantage that it has less difficulties in attaching an additional layer on the backside, such as scintillators. This paper proposes development of an ultra-high-speed IR image sensor in combination of advanced nano-technologies for IR imaging and the in-situ storage technology for ultra-highspeed imaging with discussion on issues in the integration.

Quantitative evaluation of the accuracy and variance of individual pixels in a scientific CMOS (sCMOS) camera for computational imaging

NASA Astrophysics Data System (ADS)

Watanabe, Shigeo; Takahashi, Teruo; Bennett, Keith

2017-02-01

The"scientific" CMOS (sCMOS) camera architecture fundamentally differs from CCD and EMCCD cameras. In digital CCD and EMCCD cameras, conversion from charge to the digital output is generally through a single electronic chain, and the read noise and the conversion factor from photoelectrons to digital outputs are highly uniform for all pixels, although quantum efficiency may spatially vary. In CMOS cameras, the charge to voltage conversion is separate for each pixel and each column has independent amplifiers and analog-to-digital converters, in addition to possible pixel-to-pixel variation in quantum efficiency. The "raw" output from the CMOS image sensor includes pixel-to-pixel variability in the read noise, electronic gain, offset and dark current. Scientific camera manufacturers digitally compensate the raw signal from the CMOS image sensors to provide usable images. Statistical noise in images, unless properly modeled, can introduce errors in methods such as fluctuation correlation spectroscopy or computational imaging, for example, localization microscopy using maximum likelihood estimation. We measured the distributions and spatial maps of individual pixel offset, dark current, read noise, linearity, photoresponse non-uniformity and variance distributions of individual pixels for standard, off-the-shelf Hamamatsu ORCA-Flash4.0 V3 sCMOS cameras using highly uniform and controlled illumination conditions, from dark conditions to multiple low light levels between 20 to 1,000 photons / pixel per frame to higher light conditions. We further show that using pixel variance for flat field correction leads to errors in cameras with good factory calibration.

High dynamic range pixel architecture for advanced diagnostic medical x-ray imaging applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izadi, Mohammad Hadi; Karim, Karim S.

2006-05-15

The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, small PPS output signals are swamped by external column charge amplifier and data line thermal noise, which reduce the minimum readable sensor input signal. In contrast to PPS circuits, on-pixel amplifiers in a-Si technology reduce readout noise to levels that can meet even the stringent requirements for low noise digital x-ray fluoroscopy (<1000 noise electrons). However, larger voltagesmore » at the pixel input cause the output of the amplified pixel to become nonlinear thus reducing the dynamic range. We reported a hybrid amplified pixel architecture based on a combination of PPS and amplified pixel designs that, in addition to low noise performance, also resulted in large-signal linearity and consequently higher dynamic range [K. S. Karim et al., Proc. SPIE 5368, 657 (2004)]. The additional benefit in large-signal linearity, however, came at the cost of an additional pixel transistor. We present an amplified pixel design that achieves the goals of low noise performance and large-signal linearity without the need for an additional pixel transistor. Theoretical calculations and simulation results for noise indicate the applicability of the amplified a-Si pixel architecture for high dynamic range, medical x-ray imaging applications that require switching between low exposure, real-time fluoroscopy and high-exposure radiography.« less

Image sensor with high dynamic range linear output

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Fossum, Eric R. (Inventor)

2007-01-01

Designs and operational methods to increase the dynamic range of image sensors and APS devices in particular by achieving more than one integration times for each pixel thereof. An APS system with more than one column-parallel signal chains for readout are described for maintaining a high frame rate in readout. Each active pixel is sampled for multiple times during a single frame readout, thus resulting in multiple integration times. The operation methods can also be used to obtain multiple integration times for each pixel with an APS design having a single column-parallel signal chain for readout. Furthermore, analog-to-digital conversion of high speed and high resolution can be implemented.

Bonding techniques for hybrid active pixel sensors (HAPS)

NASA Astrophysics Data System (ADS)

Bigas, M.; Cabruja, E.; Lozano, M.

2007-05-01

A hybrid active pixel sensor (HAPS) consists of an array of sensing elements which is connected to an electronic read-out unit. The most used way to connect these two different devices is bump bonding. This interconnection technique is very suitable for these systems because it allows a very fine pitch and a high number of I/Os. However, there are other interconnection techniques available such as direct bonding. This paper, as a continuation of a review [M. Lozano, E. Cabruja, A. Collado, J. Santander, M. Ullan, Nucl. Instr. and Meth. A 473 (1-2) (2001) 95-101] published in 2001, presents an update of the different advanced bonding techniques available for manufacturing a hybrid active pixel detector.

A Multi-Resolution Mode CMOS Image Sensor with a Novel Two-Step Single-Slope ADC for Intelligent Surveillance Systems.

PubMed

Kim, Daehyeok; Song, Minkyu; Choe, Byeongseong; Kim, Soo Youn

2017-06-25

In this paper, we present a multi-resolution mode CMOS image sensor (CIS) for intelligent surveillance system (ISS) applications. A low column fixed-pattern noise (CFPN) comparator is proposed in 8-bit two-step single-slope analog-to-digital converter (TSSS ADC) for the CIS that supports normal, 1/2, 1/4, 1/8, 1/16, 1/32, and 1/64 mode of pixel resolution. We show that the scaled-resolution images enable CIS to reduce total power consumption while images hold steady without events. A prototype sensor of 176 × 144 pixels has been fabricated with a 0.18 μm 1-poly 4-metal CMOS process. The area of 4-shared 4T-active pixel sensor (APS) is 4.4 μm × 4.4 μm and the total chip size is 2.35 mm × 2.35 mm. The maximum power consumption is 10 mW (with full resolution) with supply voltages of 3.3 V (analog) and 1.8 V (digital) and 14 frame/s of frame rates.

Radiation hard analog circuits for ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Gajanana, D.; Gromov, V.; Kuijer, P.; Kugathasan, T.; Snoeys, W.

2016-03-01

The ALICE experiment is planning to upgrade the ITS (Inner Tracking System) [1] detector during the LS2 shutdown. The present ITS will be fully replaced with a new one entirely based on CMOS monolithic pixel sensor chips fabricated in TowerJazz CMOS 0.18 μ m imaging technology. The large (3 cm × 1.5 cm = 4.5 cm2) ALPIDE (ALICE PIxel DEtector) sensor chip contains about 500 Kpixels, and will be used to cover a 10 m2 area with 12.5 Gpixels distributed over seven cylindrical layers. The ALPOSE chip was designed as a test chip for the various building blocks foreseen in the ALPIDE [2] pixel chip from CERN. The building blocks include: bandgap and Temperature sensor in four different flavours, and LDOs for powering schemes. One flavour of bandgap and temperature sensor will be included in the ALPIDE chip. Power consumption numbers have dropped very significantly making the use of LDOs less interesting, but in this paper all blocks are presented including measurement results before and after irradiation with neutrons to characterize robustness against displacement damage.

A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance

NASA Astrophysics Data System (ADS)

Snoeys, W.; Aglieri Rinella, G.; Hillemanns, H.; Kugathasan, T.; Mager, M.; Musa, L.; Riedler, P.; Reidt, F.; Van Hoorne, J.; Fenigstein, A.; Leitner, T.

2017-11-01

For the upgrade of its Inner Tracking System, the ALICE experiment plans to install a new tracker fully constructed with monolithic active pixel sensors implemented in a standard 180 nm CMOS imaging sensor process, with a deep pwell allowing full CMOS within the pixel. Reverse substrate bias increases the tolerance to non-ionizing energy loss (NIEL) well beyond 1013 1 MeVneq /cm2, but does not allow full depletion of the sensitive layer and hence full charge collection by drift, mandatory for more extreme radiation tolerance. This paper describes a process modification to fully deplete the epitaxial layer even with a small charge collection electrode. It uses a low dose blanket deep high energy n-type implant in the pixel array and does not require significant circuit or layout changes so that the same design can be fabricated both in the standard and modified process. When exposed to a 55 Fe source at a reverse substrate bias of -6 V, pixels implemented in the standard and the modified process in a low and high dose variant for the deep n-type implant respectively yield a signal of about 115 mV, 110 mV and 90 mV at the output of a follower circuit. Signal rise times heavily affected by the speed of this circuit are 27 . 8 + / - 5 ns, 23 . 2 + / - 4 . 2 ns, and 22 . 2 + / - 3 . 7 ns rms, respectively. In a different setup, the single pixel signal from a 90 Sr source only degrades by less than 20% for the modified process after a 1015 1 MeVneq /cm2 irradiation, while the signal rise time only degrades by about 16 + / - 2 ns to 19 + / - 2 . 8 ns rms. From sensors implemented in the standard process no useful signal could be extracted after the same exposure. These first results indicate the process modification maintains low sensor capacitance, improves timing performance and increases NIEL tolerance by at least an order of magnitude.

Characterisation of a novel reverse-biased PPD CMOS image sensor

NASA Astrophysics Data System (ADS)

Stefanov, K. D.; Clarke, A. S.; Ivory, J.; Holland, A. D.

2017-11-01

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

Development of a pyramidal wavefront sensor test-bench at INO

NASA Astrophysics Data System (ADS)

Turbide, Simon; Wang, Min; Gauvin, Jonny; Martin, Olivier; Savard, Maxime; Bourqui, Pascal; Veran, Jean-Pierre; Deschenes, William; Anctil, Genevieve; Chateauneuf, François

2013-12-01

The key technical element of the adaptive optics in astronomy is the wavefront sensing (WFS). One of the advantages of the pyramid wavefront sensor (P-WFS) over the widely used Shack-Hartmann wavefront sensor seems to be the increased sensitivity in closed-loop applications. A high-sensitivity and large dynamic-range WFS, such as P-WFS technology, still needs to be further investigated for proper justification in future Extremely Large Telescopes application. At INO, we have recently carried out the optical design, testing and performance evaluation of a P-WFS bench setup. The optical design of the bench setup mainly consists of the super-LED fiber source, source collimator, spatial light modulator (SLM), relay lenses, tip-tilt mirror, Fourier-transforming lens, and a four-faceted glass pyramid with a large vertex angle as well as pupil re-imaged optics. The phase-only SLM has been introduced in the bench setup to generate atmospheric turbulence with a maximum phase shift of more than 2π at each pixel (256 grey levels). Like a modified Foucault knife-edge test, the refractive pyramid element is used to produce four images of the entrance pupil on a CCD camera. The Fourier-transforming lens, which is used before the pyramid prism, is designed for telecentric output to allow dynamic modulation (rotation of the beam around the pyramid-prism center) from a tip-tilt mirror. Furthermore, a P-WFS diffraction-based model has been developed. This model includes most of the system limitations such as the SLM discrete voltage steps and the CCD pixel pitch. The pyramid effects (edges and tip) are considered as well. The modal wavefront reconstruction algorithm relies on the construction of an interaction matrix (one for each modulation's amplitude). Each column of the interaction matrix represents the combination of the four pupil images for a given wavefront aberration. The nice agreement between the data and the model suggest that the limitation of the system is not the P-WFS itself, but rather its environment such as source intensity fluctuation and vibration of the optical bench. Finally, the phase-reconstruction errors of the P-WFS have been compared to those of a Shack-Hartmann, showing the regions of interest of the former system. The bench setup will be focusing on the astronomy application as well as commercial applications, such as bio-medical application etc.

Active pixel image sensor with a winner-take-all mode of operation

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Mead, Carver (Inventor); Fossum, Eric R. (Inventor)

2003-01-01

An integrated CMOS semiconductor imaging device having two modes of operation that can be performed simultaneously to produce an output image and provide information of a brightest or darkest pixel in the image.

Active Pixel Sensors: Are CCD's Dinosaurs?

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1993-01-01

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

NASA Technical Reports Server (NTRS)

Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl J.; Reed, Robert; Pickel, Jim; Kniffin, Scott

2002-01-01

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

A study on rational function model generation for TerraSAR-X imagery.

PubMed

Eftekhari, Akram; Saadatseresht, Mohammad; Motagh, Mahdi

2013-09-09

The Rational Function Model (RFM) has been widely used as an alternative to rigorous sensor models of high-resolution optical imagery in photogrammetry and remote sensing geometric processing. However, not much work has been done to evaluate the applicability of the RF model for Synthetic Aperture Radar (SAR) image processing. This paper investigates how to generate a Rational Polynomial Coefficient (RPC) for high-resolution TerraSAR-X imagery using an independent approach. The experimental results demonstrate that the RFM obtained using the independent approach fits the Range-Doppler physical sensor model with an accuracy of greater than 10-3 pixel. Because independent RPCs indicate absolute errors in geolocation, two methods can be used to improve the geometric accuracy of the RFM. In the first method, Ground Control Points (GCPs) are used to update SAR sensor orientation parameters, and the RPCs are calculated using the updated parameters. Our experiment demonstrates that by using three control points in the corners of the image, an accuracy of 0.69 pixels in range and 0.88 pixels in the azimuth direction is achieved. For the second method, we tested the use of an affine model for refining RPCs. In this case, by applying four GCPs in the corners of the image, the accuracy reached 0.75 pixels in range and 0.82 pixels in the azimuth direction.

A Study on Rational Function Model Generation for TerraSAR-X Imagery

PubMed Central

Eftekhari, Akram; Saadatseresht, Mohammad; Motagh, Mahdi

2013-01-01

The Rational Function Model (RFM) has been widely used as an alternative to rigorous sensor models of high-resolution optical imagery in photogrammetry and remote sensing geometric processing. However, not much work has been done to evaluate the applicability of the RF model for Synthetic Aperture Radar (SAR) image processing. This paper investigates how to generate a Rational Polynomial Coefficient (RPC) for high-resolution TerraSAR-X imagery using an independent approach. The experimental results demonstrate that the RFM obtained using the independent approach fits the Range-Doppler physical sensor model with an accuracy of greater than 10−3 pixel. Because independent RPCs indicate absolute errors in geolocation, two methods can be used to improve the geometric accuracy of the RFM. In the first method, Ground Control Points (GCPs) are used to update SAR sensor orientation parameters, and the RPCs are calculated using the updated parameters. Our experiment demonstrates that by using three control points in the corners of the image, an accuracy of 0.69 pixels in range and 0.88 pixels in the azimuth direction is achieved. For the second method, we tested the use of an affine model for refining RPCs. In this case, by applying four GCPs in the corners of the image, the accuracy reached 0.75 pixels in range and 0.82 pixels in the azimuth direction. PMID:24021971

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

NASA Astrophysics Data System (ADS)

Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

2018-04-01

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or γ rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (μe τe) of a 500 μ m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The μe τe products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average μe τe of 1.0 ṡ 10‑4 cm2V‑1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

Multi-target detection and positioning in crowds using multiple camera surveillance

NASA Astrophysics Data System (ADS)

Huang, Jiahu; Zhu, Qiuyu; Xing, Yufeng

2018-04-01

In this study, we propose a pixel correspondence algorithm for positioning in crowds based on constraints on the distance between lines of sight, grayscale differences, and height in a world coordinates system. First, a Gaussian mixture model is used to obtain the background and foreground from multi-camera videos. Second, the hair and skin regions are extracted as regions of interest. Finally, the correspondences between each pixel in the region of interest are found under multiple constraints and the targets are positioned by pixel clustering. The algorithm can provide appropriate redundancy information for each target, which decreases the risk of losing targets due to a large viewing angle and wide baseline. To address the correspondence problem for multiple pixels, we construct a pixel-based correspondence model based on a similar permutation matrix, which converts the correspondence problem into a linear programming problem where a similar permutation matrix is found by minimizing an objective function. The correct pixel correspondences can be obtained by determining the optimal solution of this linear programming problem and the three-dimensional position of the targets can also be obtained by pixel clustering. Finally, we verified the algorithm with multiple cameras in experiments, which showed that the algorithm has high accuracy and robustness.

Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

Panoramic thermal imaging: challenges and tradeoffs

NASA Astrophysics Data System (ADS)

Aburmad, Shimon

2014-06-01

Over the past decade, we have witnessed a growing demand for electro-optical systems that can provide continuous 3600 coverage. Applications such as perimeter security, autonomous vehicles, and military warning systems are a few of the most common applications for panoramic imaging. There are several different technological approaches for achieving panoramic imaging. Solutions based on rotating elements do not provide continuous coverage as there is a time lag between updates. Continuous panoramic solutions either use "stitched" images from multiple adjacent sensors, or sophisticated optical designs which warp a panoramic view onto a single sensor. When dealing with panoramic imaging in the visible spectrum, high volume production and advancement of semiconductor technology has enabled the use of CMOS/CCD image sensors with a huge number of pixels, small pixel dimensions, and low cost devices. However, in the infrared spectrum, the growth of detector pixel counts, pixel size reduction, and cost reduction is taking place at a slower rate due to the complexity of the technology and limitations caused by the laws of physics. In this work, we will explore the challenges involved in achieving 3600 panoramic thermal imaging, and will analyze aspects such as spatial resolution, FOV, data complexity, FPA utilization, system complexity, coverage and cost of the different solutions. We will provide illustrations, calculations, and tradeoffs between three solutions evaluated by Opgal: A unique 3600 lens design using an LWIR XGA detector, stitching of three adjacent LWIR sensors equipped with a low distortion 1200 lens, and a fisheye lens with a HFOV of 180º and an XGA sensor.

The Design of Optical Sensor for the Pinhole/Occulter Facility

NASA Technical Reports Server (NTRS)

Greene, Michael E.

1990-01-01

Three optical sight sensor systems were designed, built and tested. Two optical lines of sight sensor system are capable of measuring the absolute pointing angle to the sun. The system is for use with the Pinhole/Occulter Facility (P/OF), a solar hard x ray experiment to be flown from Space Shuttle or Space Station. The sensor consists of a pinhole camera with two pairs of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the pinhole, track and hold circuitry for data reduction, an analog to digital converter, and a microcomputer. The deflection of the image center is calculated from these data using an approximation for the solar image. A second system consists of a pinhole camera with a pair of perpendicularly mounted linear photodiode arrays, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed. A third optical sensor system is capable of measuring the internal vibration of the P/OF between the mask and base. The system consists of a white light source, a mirror and a pair of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the mirror, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image and hence the vibration of the structure is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed.

The Transition-Edge-Sensor Array for the Micro-X Sounding Rocket

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, Sarah Elizabeth; Chervenak J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porst, J. P.;

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.; Sato, Kz.; Sato, Kj.; Iwabuchi, S.; Suzuki, J.

2017-01-01

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

Using polynomials to simplify fixed pattern noise and photometric correction of logarithmic CMOS image sensors.

PubMed

Li, Jing; Mahmoodi, Alireza; Joseph, Dileepan

2015-10-16

An important class of complementary metal-oxide-semiconductor (CMOS) image sensors are those where pixel responses are monotonic nonlinear functions of light stimuli. This class includes various logarithmic architectures, which are easily capable of wide dynamic range imaging, at video rates, but which are vulnerable to image quality issues. To minimize fixed pattern noise (FPN) and maximize photometric accuracy, pixel responses must be calibrated and corrected due to mismatch and process variation during fabrication. Unlike literature approaches, which employ circuit-based models of varying complexity, this paper introduces a novel approach based on low-degree polynomials. Although each pixel may have a highly nonlinear response, an approximately-linear FPN calibration is possible by exploiting the monotonic nature of imaging. Moreover, FPN correction requires only arithmetic, and an optimal fixed-point implementation is readily derived, subject to a user-specified number of bits per pixel. Using a monotonic spline, involving cubic polynomials, photometric calibration is also possible without a circuit-based model, and fixed-point photometric correction requires only a look-up table. The approach is experimentally validated with a logarithmic CMOS image sensor and is compared to a leading approach from the literature. The novel approach proves effective and efficient.

A 3D image sensor with adaptable charge subtraction scheme for background light suppression

NASA Astrophysics Data System (ADS)

Shin, Jungsoon; Kang, Byongmin; Lee, Keechang; Kim, James D. K.

2013-02-01

We present a 3D ToF (Time-of-Flight) image sensor with adaptive charge subtraction scheme for background light suppression. The proposed sensor can alternately capture high resolution color image and high quality depth map in each frame. In depth-mode, the sensor requires enough integration time for accurate depth acquisition, but saturation will occur in high background light illumination. We propose to divide the integration time into N sub-integration times adaptively. In each sub-integration time, our sensor captures an image without saturation and subtracts the charge to prevent the pixel from the saturation. In addition, the subtraction results are cumulated N times obtaining a final result image without background illumination at full integration time. Experimental results with our own ToF sensor show high background suppression performance. We also propose in-pixel storage and column-level subtraction circuit for chiplevel implementation of the proposed method. We believe the proposed scheme will enable 3D sensors to be used in out-door environment.

Reduced signal crosstalk multi neurotransmitter image sensor by microhole array structure

NASA Astrophysics Data System (ADS)

Ogaeri, Yuta; Lee, You-Na; Mitsudome, Masato; Iwata, Tatsuya; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-06-01

A microhole array structure combined with an enzyme immobilization method using magnetic beads can enhance the target discernment capability of a multi neurotransmitter image sensor. Here we report the fabrication and evaluation of the H+-diffusion-preventing capability of the sensor with the array structure. The structure with an SU-8 photoresist has holes with a size of 24.5 × 31.6 µm2. Sensors were prepared with the array structure of three different heights: 0, 15, and 60 µm. When the sensor has the structure of 60 µm height, 48% reduced output voltage is measured at a H+-sensitive null pixel that is located 75 µm from the acetylcholinesterase (AChE)-immobilized pixel, which is the starting point of H+ diffusion. The suppressed H+ immigration is shown in a two-dimensional (2D) image in real time. The sensor parameters, such as height of the array structure and measuring time, are optimized experimentally. The sensor is expected to effectively distinguish various neurotransmitters in biological samples.

Sensing, Spectra and Scaling: What's in Store for Land Observations

NASA Technical Reports Server (NTRS)

Goetz, Alexander F. H.

2001-01-01

Bill Pecora's 1960's vision of the future, using spacecraft-based sensors for mapping the environment and exploring for resources, is being implemented today. New technology has produced better sensors in space such as the Landsat Thematic Mapper (TM) and SPOT, and creative researchers are continuing to find new applications. However, with existing sensors, and those intended for launch in this century, the potential for extracting information from the land surface is far from being exploited. The most recent technology development is imaging spectrometry, the acquisition of images in hundreds of contiguous spectral bands, such that for any pixel a complete reflectance spectrum can be acquired. Experience with Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) has shown that, with proper attention paid to absolute calibration, it is possible to acquire apparent surface reflectance to 5% accuracy without any ground-based measurement. The data reduction incorporates in educated guess of the aerosol scattering, development of a precipitable water vapor map from the data and mapping of cirrus clouds in the 1.38 micrometer band. This is not possible with TM. The pixel size in images of the earth plays and important role in the type and quality of information that can be derived. Less understood is the coupling between spatial and spectral resolution in a sensor. Recent work has shown that in processing the data to derive the relative abundance of materials in a pixel, also known is unmixing, the pixel size is an important parameter. A variance in the relative abundance of materials among the pixels is necessary to be able to derive the endmembers or pure material constituent spectra. In most cases, the 1 km pixel size for the Earth Observing System Moderate Resolution Imaging Spectroradiometer (MODIS) instrument is too large to meet the variance criterion. A pointable high spatial and spectral resolution imaging spectrometer in orbit will be necessary to make the major next step in our understanding of the solid earth surface and its changing face.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

Sub-pixel localisation of passive micro-coil fiducial markers in interventional MRI.

PubMed

Rea, Marc; McRobbie, Donald; Elhawary, Haytham; Tse, Zion T H; Lamperth, Michael; Young, Ian

2009-04-01

Electromechanical devices enable increased accuracy in surgical procedures, and the recent development of MRI-compatible mechatronics permits the use of MRI for real-time image guidance. Integrated imaging of resonant micro-coil fiducials provides an accurate method of tracking devices in a scanner with increased flexibility compared to gradient tracking. Here we report on the ability of ten different image-processing algorithms to track micro-coil fiducials with sub-pixel accuracy. Five algorithms: maximum pixel, barycentric weighting, linear interpolation, quadratic fitting and Gaussian fitting were applied both directly to the pixel intensity matrix and to the cross-correlation matrix obtained by 2D convolution with a reference image. Using images of a 3 mm fiducial marker and a pixel size of 1.1 mm, intensity linear interpolation, which calculates the position of the fiducial centre by interpolating the pixel data to find the fiducial edges, was found to give the best performance for minimal computing power; a maximum error of 0.22 mm was observed in fiducial localisation for displacements up to 40 mm. The inherent standard deviation of fiducial localisation was 0.04 mm. This work enables greater accuracy to be achieved in passive fiducial tracking.

Miniaturized LEDs for flat-panel displays

NASA Astrophysics Data System (ADS)

Radauscher, Erich J.; Meitl, Matthew; Prevatte, Carl; Bonafede, Salvatore; Rotzoll, Robert; Gomez, David; Moore, Tanya; Raymond, Brook; Cok, Ronald; Fecioru, Alin; Trindade, António Jose; Fisher, Brent; Goodwin, Scott; Hines, Paul; Melnik, George; Barnhill, Sam; Bower, Christopher A.

2017-02-01

Inorganic light emitting diodes (LEDs) serve as bright pixel-level emitters in displays, from indoor/outdoor video walls with pixel sizes ranging from one to thirty millimeters to micro displays with more than one thousand pixels per inch. Pixel sizes that fall between those ranges, roughly 50 to 500 microns, are some of the most commercially significant ones, including flat panel displays used in smart phones, tablets, and televisions. Flat panel displays that use inorganic LEDs as pixel level emitters (μILED displays) can offer levels of brightness, transparency, and functionality that are difficult to achieve with other flat panel technologies. Cost-effective production of μILED displays requires techniques for precisely arranging sparse arrays of extremely miniaturized devices on a panel substrate, such as transfer printing with an elastomer stamp. Here we present lab-scale demonstrations of transfer printed μILED displays and the processes used to make them. Demonstrations include passive matrix μILED displays that use conventional off-the shelf drive ASICs and active matrix μILED displays that use miniaturized pixel-level control circuits from CMOS wafers. We present a discussion of key considerations in the design and fabrication of highly miniaturized emitters for μILED displays.

Geometric correction methods for Timepix based large area detectors

NASA Astrophysics Data System (ADS)

Zemlicka, J.; Dudak, J.; Karch, J.; Krejci, F.

2017-01-01

X-ray micro radiography with the hybrid pixel detectors provides versatile tool for the object inspection in various fields of science. It has proven itself especially suitable for the samples with low intrinsic attenuation contrast (e.g. soft tissue in biology, plastics in material sciences, thin paint layers in cultural heritage, etc.). The limited size of single Medipix type detector (1.96 cm2) was recently overcome by the construction of large area detectors WidePIX assembled of Timepix chips equipped with edgeless silicon sensors. The largest already built device consists of 100 chips and provides fully sensitive area of 14.3 × 14.3 cm2 without any physical gaps between sensors. The pixel resolution of this device is 2560 × 2560 pixels (6.5 Mpix). The unique modular detector layout requires special processing of acquired data to avoid occurring image distortions. It is necessary to use several geometric compensations after standard corrections methods typical for this type of pixel detectors (i.e. flat-field, beam hardening correction). The proposed geometric compensations cover both concept features and particular detector assembly misalignment of individual chip rows of large area detectors based on Timepix assemblies. The former deals with larger border pixels in individual edgeless sensors and their behaviour while the latter grapple with shifts, tilts and steps between detector rows. The real position of all pixels is defined in Cartesian coordinate system and together with non-binary reliability mask it is used for the final image interpolation. The results of geometric corrections for test wire phantoms and paleo botanic material are presented in this article.

The ABLE ACE wavefront sensor

NASA Astrophysics Data System (ADS)

Butts, Robert R.

1997-08-01

A low noise, high resolution Shack-Hartmann wavefront sensor was included in the ABLE-ACE instrument suite to obtain direct high resolution phase measurements of the 0.53 micrometers pulsed laser beam propagated through high altitude atmospheric turbulence. The wavefront sensor employed a Fired geometry using a lenslet array which provided approximately 17 sub-apertures across the pupil. The lenslets focused the light in each sub-aperture onto a 21 by 21 array of pixels in the camera focal plane with 8 pixels in the camera focal plane with 8 pixels across the central lobe of the diffraction limited spot. The goal of the experiment was to measure the effects of the turbulence in the free atmosphere on propagation, but the wavefront sensor also detected the aberrations induced by the aircraft boundary layer and the receiver aircraft internal beam path. Data analysis methods used to extract the desired atmospheric contribution to the phase measurements from the data corrupted by non-atmospheric aberrations are described. Approaches which were used included a reconstruction of the phase as a linear combination of Zernike polynomials coupled with optical estimator sand computation of structure functions of the sub-aperture slopes. The theoretical basis for the data analysis techniques is presented. Results are described, and comparisons with theory and simulations are shown. Estimates of average turbulence strength along the propagation path from the wavefront sensor showed good agreement with other sensor. The Zernike spectra calculated from the wavefront sensor data were consistent with the standard Kolmogorov model of turbulence.

Development of radiation tolerant monolithic active pixel sensors with fast column parallel read-out

NASA Astrophysics Data System (ADS)

Koziel, M.; Dorokhov, A.; Fontaine, J.-C.; De Masi, R.; Winter, M.

2010-12-01

Monolithic active pixel sensors (MAPS) [1] (Turchetta et al., 2001) are being developed at IPHC—Strasbourg to equip the EUDET telescope [2] (Haas, 2006) and vertex detectors for future high energy physics experiments, including the STAR upgrade at RHIC [3] (T.S. Collaboration, 2005) and the CBM experiment at FAIR/GSI [4] (Heuser, 2006). High granularity, low material budget and high read-out speed are systematically required for most applications, complemented, for some of them, with high radiation tolerance. A specific column-parallel architecture, implemented in the MIMOSA-22 sensor, was developed to achieve fast read-out MAPS. Previous studies of the front-end architecture integrated in this sensor, which includes in-pixel amplification, have shown that the fixed pattern noise increase consecutive to ionizing radiation can be controlled by means of a negative feedback [5] (Hu-Guo et al., 2008). However, an unexpected rise of the temporal noise was observed. A second version of this chip (MIMOSA-22bis) was produced in order to search for possible improvements of the radiation tolerance, regarding this type of noise. In this prototype, the feedback transistor was tuned in order to mitigate the sensitivity of the pixel to ionizing radiation. The performances of the pixels after irradiation were investigated for two types of feedback transistors: enclosed layout transistor (ELT) [6] (Snoeys et al., 2000) and "standard" transistor with either large or small transconductance. The noise performance of all test structures was studied in various conditions (expected in future experiments) regarding temperature, integration time and ionizing radiation dose. Test results are presented in this paper. Based on these observations, ideas for further improvement of the radiation tolerance of column parallel MAPS are derived.

How many pixels does it take to make a good 4"×6" print? Pixel count wars revisited

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2011-01-01

In the early 1980's the future of conventional silver-halide photographic systems was of great concern due to the potential introduction of electronic imaging systems then typified by the Sony Mavica analog electronic camera. The focus was on the quality of film-based systems as expressed in the number of equivalent number pixels and bits-per-pixel, and how many pixels would be required to create an equivalent quality image from a digital camera. It was found that 35-mm frames, for ISO 100 color negative film, contained equivalent pixels of 12 microns for a total of 18 million pixels per frame (6 million pixels per layer) with about 6 bits of information per pixel; the introduction of new emulsion technology, tabular AgX grains, increased the value to 8 bit per pixel. Higher ISO speed films had larger equivalent pixels, fewer pixels per frame, but retained the 8 bits per pixel. Further work found that a high quality 3.5" x 5.25" print could be obtained from a three layer system containing 1300 x 1950 pixels per layer or about 7.6 million pixels in all. In short, it became clear that when a digital camera contained about 6 million pixels (in a single layer using a color filter array and appropriate image processing) that digital systems would challenge and replace conventional film-based system for the consumer market. By 2005 this became the reality. Since 2005 there has been a "pixel war" raging amongst digital camera makers. The question arises about just how many pixels are required and are all pixels equal? This paper will provide a practical look at how many pixels are needed for a good print based on the form factor of the sensor (sensor size) and the effective optical modulation transfer function (optical spread function) of the camera lens. Is it better to have 16 million, 5.7-micron pixels or 6 million 7.8-micron pixels? How does intrinsic (no electronic boost) ISO speed and exposure latitude vary with pixel size? A systematic review of these issues will be provided within the context of image quality and ISO speed models developed over the last 15 years.

Development of Position-Sensitive Magnetic Calorimeters for X-Ray Astronomy

NASA Technical Reports Server (NTRS)

Bandler, SImon; Stevenson, Thomas; Hsieh, Wen-Ting

2011-01-01

Metallic magnetic calorimeters (MMC) are one of the most promising devices to provide very high energy resolution needed for future astronomical x-ray spectroscopy. MMC detectors can be built to large detector arrays having thousands of pixels. Position-sensitive magnetic (PoSM) microcalorimeters consist of multiple absorbers thermally coupled to one magnetic micro calorimeter. Each absorber element has a different thermal coupling to the MMC, resulting in a distribution of different pulse shapes and enabling position discrimination between the absorber elements. PoSMs therefore achieve the large focal plane area with fewer number of readout channels without compromising spatial sampling. Excellent performance of PoSMs was achieved by optimizing the designs of key parameters such as the thermal conductance among the absorbers, magnetic sensor, and heat sink, as well as the absorber heat capacities. Micro fab ri - cation techniques were developed to construct four-absorber PoSMs, in which each absorber consists of a two-layer composite of bismuth and gold. The energy resolution (FWHM full width at half maximum) was measured to be better than 5 eV at 6 keV x-rays for all four absorbers. Position determination was demonstrated with pulse-shape discrimination, as well as with pulse rise time. X-ray microcalorimeters are usually designed to thermalize as quickly as possible to avoid degradation in energy resolution from position dependence to the pulse shapes. Each pixel consists of an absorber and a temperature sensor, both decoupled from the cold bath through a weak thermal link. Each pixel requires a separate readout channel; for instance, with a SQUID (superconducting quantum interference device). For future astronomy missions where thousands to millions of resolution elements are required, having an individual SQUID readout channel for each pixel becomes difficult. One route to attaining these goals is a position-sensitive detector in which a large continuous or pixilated array of x-ray absorbers shares fewer numbers of temperature sensors. A means of discriminating the signals from different absorber positions, however, needs to be built into the device for each sensor. The design concept for the device is such that the shape of the temperature pulse with time depends on the location of the absorber. This inherent position sensitivity of the signal is then analyzed to determine the location of the event precisely, effectively yielding one device with many sub-pixels. With such devices, the total number of electronic channels required to read out a given number of pixels is significantly reduced. PoSMs were developed that consist of four discrete absorbers connected to a single magnetic sensor. The design concept can be extended to more than four absorbers per sensor. The thermal conductance between the sensor and each absorber is different by design and consequently, the pulse shapes are different depending upon which absorber the xrays are received, allowing position discrimination. A magnetic sensor was used in which a paramagnetic Au:Er temperature-sensitive material is located in a weak magnetic field. Deposition of energy from an x-ray photon causes an increase in temperature, which leads to a change of magnetization of the paramagnetic sensor, which is subsequently read out using a low noise dc-SQUID. The PoSM microcalorimeters are fully microfabricated: the Au:Er sensor is located above the meander, with a thin insulation gap in between. For this position-sensitive device, four electroplated absorbers are thermally linked to the sensor via heat links of different thermal conductance. One pixel is identical to that of a single-pixel design, consisting of an overhanging absorber fabricated directly on top of the sensor. It is therefore very strongly thermally coupled to it. The three other absorbers are supported directly on a silicon-nitride membrane. These absorbers are thermally coupled to the sensor via Ti (5 nm)/Au250 nm) metal links. The strength of the links is parameterized by the number of gold squares making up the link. For detector performance, experimentally different pulse-shapes were demonstrated with 6 keV x-rays, which clearly show different rise times for different absorber positions. For energy resolution measurement, the PoSM was operated at 32 mK with an applied field that was generated using a persistent current of 50 mA. Over the four pixels, energy resolution ranges from 4.4 to 4.7 eV were demonstrated.

Status and Construction of the Belle II DEPFET pixel system

NASA Astrophysics Data System (ADS)

Lütticke, Florian

2014-06-01

DEpleted P-channel Field Effect Transistor (DEPFET) active pixel detectors combine detection with a first amplification stage in a fully depleted detector, resulting in an superb signal-to-noise ratio even for thin sensors. Two layers of thin (75 micron) silicon DEPFET pixels will be used as the innermost vertex system, very close to the beam pipe in the Belle II detector at the SuperKEKB facility. The status of the 8 million DEPFET pixels detector, latest developments and current system tests will be discussed.

Backside illuminated CMOS-TDI line scanner for space applications

NASA Astrophysics Data System (ADS)

Cohen, O.; Ben-Ari, N.; Nevo, I.; Shiloah, N.; Zohar, G.; Kahanov, E.; Brumer, M.; Gershon, G.; Ofer, O.

2017-09-01

A new multi-spectral line scanner CMOS image sensor is reported. The backside illuminated (BSI) image sensor was designed for continuous scanning Low Earth Orbit (LEO) space applications including A custom high quality CMOS Active Pixels, Time Delayed Integration (TDI) mechanism that increases the SNR, 2-phase exposure mechanism that increases the dynamic Modulation Transfer Function (MTF), very low power internal Analog to Digital Converters (ADC) with resolution of 12 bit per pixel and on chip controller. The sensor has 4 independent arrays of pixels where each array is arranged in 2600 TDI columns with controllable TDI depth from 8 up to 64 TDI levels. A multispectral optical filter with specific spectral response per array is assembled at the package level. In this paper we briefly describe the sensor design and present some electrical and electro-optical recent measurements of the first prototypes including high Quantum Efficiency (QE), high MTF, wide range selectable Full Well Capacity (FWC), excellent linearity of approximately 1.3% in a signal range of 5-85% and approximately 1.75% in a signal range of 2-95% out of the signal span, readout noise of approximately 95 electrons with 64 TDI levels, negligible dark current and power consumption of less than 1.5W total for 4 bands sensor at all operation conditions .

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

Resolution studies with the DATURA beam telescope

NASA Astrophysics Data System (ADS)

Jansen, H.

2016-12-01

Detailed studies of the resolution of a EUDET-type beam telescope are carried out using the DATURA beam telescope as an example. The EUDET-type beam telescopes make use of CMOS MIMOSA 26 pixel detectors for particle tracking allowing for precise characterisation of particle-sensing devices. A profound understanding of the performance of the beam telescope as a whole is obtained by a detailed characterisation of the sensors themselves. The differential intrinsic resolution as measured in a MIMOSA 26 sensor is extracted using an iterative pull method, and various quantities that depend on the size of the cluster produced by a traversing charged particle are discussed: the residual distribution, the intra-pixel residual-width distribution and the intra-pixel density distribution of track incident positions.

The ATLAS Diamond Beam Monitor: Luminosity detector at the LHC

NASA Astrophysics Data System (ADS)

Schaefer, D. M.; ATLAS Collaboration

2016-07-01

After the first three years of the LHC running, the ATLAS experiment extracted its pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes are based on chemical vapor deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This paper describes the lessons learned in construction and commissioning of the ATLAS Diamond Beam Monitor (DBM). We show results from the construction quality assurance tests and commissioning performance, including results from cosmic ray running in early 2015.

Optimization of CMOS image sensor utilizing variable temporal multisampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability

NASA Astrophysics Data System (ADS)

Kabir, Salman; Smith, Craig; Armstrong, Frank; Barnard, Gerrit; Schneider, Alex; Guidash, Michael; Vogelsang, Thomas; Endsley, Jay

2018-03-01

Differential binary pixel technology is a threshold-based timing, readout, and image reconstruction method that utilizes the subframe partial charge transfer technique in a standard four-transistor (4T) pixel CMOS image sensor to achieve a high dynamic range video with stop motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21 dB. The method is verified in silicon using a Taiwan Semiconductor Manufacturing Company's 65 nm 1.1 μm pixel technology 1 megapixel test chip array and is compared with a traditional 4 × oversampling technique using full charge transfer to show low light SNR superiority of the presented technology.

Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

NASA Astrophysics Data System (ADS)

Chen, Charlene; Abe, Katsumi; Fung, Tze-Ching; Kumomi, Hideya; Kanicki, Jerzy

2009-03-01

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (ΔVT) within acceptable operating error range.

CAOS-CMOS camera.

PubMed

Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

2016-06-13

Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

NASA Astrophysics Data System (ADS)

Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

2018-01-01

We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

High responsivity CMOS imager pixel implemented in SOI technology

NASA Technical Reports Server (NTRS)

Zheng, X.; Wrigley, C.; Yang, G.; Pain, B.

2000-01-01

Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

Improved charge injection device and a focal plane interface electronics board for stellar tracking

NASA Technical Reports Server (NTRS)

Michon, G. J.; Burke, H. K.

1984-01-01

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

AEDC Sensor T&E Methodology

DTIC Science & Technology

1995-07-01

designated pixel. OTF analysis will be similar to the analysis discussed previously. Any nonuniformity in the response of the chosen pixel to the...not seen by the trace. Nonuniformity of the pixel response must be also be taken into account. Background measurements of the maximum and minimum...to the background field of regard. To incorporate and support interactive CLDWSG operation and to accommodate simulation of nonuniform anisoplanatic

A Dual-Mode Large-Arrayed CMOS ISFET Sensor for Accurate and High-Throughput pH Sensing in Biomedical Diagnosis.

PubMed

Huang, Xiwei; Yu, Hao; Liu, Xu; Jiang, Yu; Yan, Mei; Wu, Dongping

2015-09-01

The existing ISFET-based DNA sequencing detects hydrogen ions released during the polymerization of DNA strands on microbeads, which are scattered into microwell array above the ISFET sensor with unknown distribution. However, false pH detection happens at empty microwells due to crosstalk from neighboring microbeads. In this paper, a dual-mode CMOS ISFET sensor is proposed to have accurate pH detection toward DNA sequencing. Dual-mode sensing, optical and chemical modes, is realized by integrating a CMOS image sensor (CIS) with ISFET pH sensor, and is fabricated in a standard 0.18-μm CIS process. With accurate determination of microbead physical locations with CIS pixel by contact imaging, the dual-mode sensor can correlate local pH for one DNA slice at one location-determined microbead, which can result in improved pH detection accuracy. Moreover, toward a high-throughput DNA sequencing, a correlated-double-sampling readout that supports large array for both modes is deployed to reduce pixel-to-pixel nonuniformity such as threshold voltage mismatch. The proposed CMOS dual-mode sensor is experimentally examined to show a well correlated pH map and optical image for microbeads with a pH sensitivity of 26.2 mV/pH, a fixed pattern noise (FPN) reduction from 4% to 0.3%, and a readout speed of 1200 frames/s. A dual-mode CMOS ISFET sensor with suppressed FPN for accurate large-arrayed pH sensing is proposed and demonstrated with state-of-the-art measured results toward accurate and high-throughput DNA sequencing. The developed dual-mode CMOS ISFET sensor has great potential for future personal genome diagnostics with high accuracy and low cost.

Distributed Antenna-Coupled TES for FIR Detectors Arrays

NASA Technical Reports Server (NTRS)

Day, Peter K.; Leduc, Henry G.; Dowell, C. Darren; Lee, Richard A.; Zmuidzinas, Jonas

2007-01-01

We describe a new architecture for a superconducting detector for the submillimeter and far-infrared. This detector uses a distributed hot-electron transition edge sensor (TES) to collect the power from a focal-plane-filling slot antenna array. The sensors lay directly across the slots of the antenna and match the antenna impedance of about 30 ohms. Each pixel contains many sensors that are wired in parallel as a single distributed TES, which results in a low impedance that readily matches to a multiplexed SQUID readout These detectors are inherently polarization sensitive, with very low cross-polarization response, but can also be configured to sum both polarizations. The dual-polarization design can have a bandwidth of 50The use of electron-phonon decoupling eliminates the need for micro-machining, making the focal plane much easier to fabricate than with absorber-coupled, mechanically isolated pixels. We discuss applications of these detectors and a hybridization scheme compatible with arrays of tens of thousands of pixels.

4K x 2K pixel color video pickup system

NASA Astrophysics Data System (ADS)

Sugawara, Masayuki; Mitani, Kohji; Shimamoto, Hiroshi; Fujita, Yoshihiro; Yuyama, Ichiro; Itakura, Keijirou

1998-12-01

This paper describes the development of an experimental super- high-definition color video camera system. During the past several years there has been much interest in super-high- definition images as the next generation image media. One of the difficulties in implementing a super-high-definition motion imaging system is constructing the image-capturing section (camera). Even the state-of-the-art semiconductor technology can not realize the image sensor which has enough pixels and output data rate for super-high-definition images. The present study is an attempt to fill the gap in this respect. The authors intend to solve the problem by using new imaging method in which four HDTV sensors are attached on a new color separation optics so that their pixel sample pattern forms checkerboard pattern. A series of imaging experiments demonstrate that this technique is an effective approach to capturing super-high-definition moving images in the present situation where no image sensors exist for such images.

Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

2016-07-01

The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

Satellite-Sensor Calibration Verification Using the Cloud-Shadow Method

NASA Technical Reports Server (NTRS)

Reinersman, P.; Carder, K. L.; Chen, F. R.

1995-01-01

An atmospheric-correction method which uses cloud-shaded pixels together with pixels in a neighboring region of similar optical properties is described. This cloud-shadow method uses the difference between the total radiance values observed at the sensor for these two regions, thus removing the nearly identical atmospheric radiance contributions to the two signals (e.g. path radiance and Fresnel-reflected skylight). What remains is largely due to solar photons backscattered from beneath the sea to dominate the residual signal. Normalization by the direct solar irradiance reaching the sea surface and correction for some second-order effects provides the remote-sensing reflectance of the ocean at the location of the neighbor region, providing a known 'ground target' spectrum for use in testing the calibration of the sensor. A similar approach may be useful for land targets if horizontal homogeneity of scene reflectance exists about the shadow. Monte Carlo calculations have been used to correct for adjacency effects and to estimate the differences in the skylight reaching the shadowed and neighbor pixels.

Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoidn, Oliver R.; Seidler, Gerald T., E-mail: seidler@uw.edu

We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energymore » resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.« less

Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200 C and method of fabrication

DOEpatents

Carey, P.G.; Smith, P.M.; Havens, J.H.; Jones, P.

1999-01-05

Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100 C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired. 12 figs.

Plastic substrates for active matrix liquid crystal display incapable of withstanding processing temperature of over 200.degree. C and method of fabrication

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Havens, John; Jones, Phil

1999-01-01

Bright-polarizer-free, active-matrix liquid crystal displays (AMLCDs) are formed on plastic substrates. The primary components of the display are a pixel circuit fabricated on one plastic substrate, an intervening liquid-crystal material, and a counter electrode on a second plastic substrate. The-pixel circuit contains one or more thin-film transistors (TFTs) and either a transparent or reflective pixel electrode manufactured at sufficiently low temperatures to avoid damage to the plastic substrate. Fabrication of the TFTs can be carried out at temperatures less than 100.degree. C. The liquid crystal material is a commercially made nematic curvilinear aligned phase (NCAP) film. The counter electrode is comprised of a plastic substrate coated with a transparent conductor, such as indium-doped tin oxide (ITO). By coupling the active matrix with NCAP, a high-information content can be provided in a bright, fully plastic package. Applications include any low cost portable electronics containing flat displays where ruggedization of the display is desired.

Image recovery by removing stochastic artefacts identified as local asymmetries

NASA Astrophysics Data System (ADS)

Osterloh, K.; Bücherl, T.; Zscherpel, U.; Ewert, U.

2012-04-01

Stochastic artefacts are frequently encountered in digital radiography and tomography with neutrons. Most obviously, they are caused by ubiquitous scattered radiation hitting the CCD-sensor. They appear as scattered dots and, at higher frequency of occurrence, they may obscure the image. Some of these dotted interferences vary with time, however, a large portion of them remains persistent so the problem cannot be resolved by collecting stacks of images and to merge them to a median image. The situation becomes even worse in computed tomography (CT) where each artefact causes a circular pattern in the reconstructed plane. Therefore, these stochastic artefacts have to be removed completely and automatically while leaving the original image content untouched. A simplified image acquisition and artefact removal tool was developed at BAM and is available to interested users. Furthermore, an algorithm complying with all the requirements mentioned above was developed that reliably removes artefacts that could even exceed the size of a single pixel without affecting other parts of the image. It consists of an iterative two-step algorithm adjusting pixel values within a 3 × 3 matrix inside of a 5 × 5 kernel and the centre pixel only within a 3 × 3 kernel, resp. It has been applied to thousands of images obtained from the NECTAR facility at the FRM II in Garching, Germany, without any need of a visual control. In essence, the procedure consists of identifying and tackling asymmetric intensity distributions locally with recording each treatment of a pixel. Searching for the local asymmetry with subsequent correction rather than replacing individually identified pixels constitutes the basic idea of the algorithm. The efficiency of the proposed algorithm is demonstrated with a severely spoiled example of neutron radiography and tomography as compared with median filtering, the most convenient alternative approach by visual check, histogram and power spectra analysis.

Photon counting phosphorescence lifetime imaging with TimepixCam

DOE PAGES

Hirvonen, Liisa M.; Fisher-Levine, Merlin; Suhling, Klaus; ...

2017-01-12

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window, and read out by a Timepix ASIC. The 256 x 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting (TCSPC) imaging. We have characterised the photon detection capabilities of this detector system, and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200more » μm diameter polystyrene beads.« less

Photon counting phosphorescence lifetime imaging with TimepixCam.

PubMed

Hirvonen, Liisa M; Fisher-Levine, Merlin; Suhling, Klaus; Nomerotski, Andrei

2017-01-01

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window and read out by a Timepix Application Specific Integrated Circuit. The 256 × 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting imaging. We have characterised the photon detection capabilities of this detector system and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200 μm diameter polystyrene beads.

Photon counting phosphorescence lifetime imaging with TimepixCam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirvonen, Liisa M.; Fisher-Levine, Merlin; Suhling, Klaus

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window, and read out by a Timepix ASIC. The 256 x 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting (TCSPC) imaging. We have characterised the photon detection capabilities of this detector system, and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200more » μm diameter polystyrene beads.« less

Photon counting phosphorescence lifetime imaging with TimepixCam

NASA Astrophysics Data System (ADS)

Hirvonen, Liisa M.; Fisher-Levine, Merlin; Suhling, Klaus; Nomerotski, Andrei

2017-01-01

TimepixCam is a novel fast optical imager based on an optimized silicon pixel sensor with a thin entrance window and read out by a Timepix Application Specific Integrated Circuit. The 256 × 256 pixel sensor has a time resolution of 15 ns at a sustained frame rate of 10 Hz. We used this sensor in combination with an image intensifier for wide-field time-correlated single photon counting imaging. We have characterised the photon detection capabilities of this detector system and employed it on a wide-field epifluorescence microscope to map phosphorescence decays of various iridium complexes with lifetimes of about 1 μs in 200 μm diameter polystyrene beads.

Data Processing for a High Resolution Preclinical PET Detector Based on Philips DPC Digital SiPMs

NASA Astrophysics Data System (ADS)

Schug, David; Wehner, Jakob; Goldschmidt, Benjamin; Lerche, Christoph; Dueppenbecker, Peter Michael; Hallen, Patrick; Weissler, Bjoern; Gebhardt, Pierre; Kiessling, Fabian; Schulz, Volkmar

2015-06-01

In positron emission tomography (PET) systems, light sharing techniques are commonly used to readout scintillator arrays consisting of scintillation elements, which are smaller than the optical sensors. The scintillating element is then identified evaluating the signal heights in the readout channels using statistical algorithms, the center of gravity (COG) algorithm being the simplest and mostly used one. We propose a COG algorithm with a fixed number of input channels in order to guarantee a stable calculation of the position. The algorithm is implemented and tested with the raw detector data obtained with the Hyperion-II D preclinical PET insert which uses Philips Digital Photon Counting's (PDPC) digitial SiPMs. The gamma detectors use LYSO scintillator arrays with 30 ×30 crystals of 1 ×1 ×12 mm3 in size coupled to 4 ×4 PDPC DPC 3200-22 sensors (DPC) via a 2-mm-thick light guide. These self-triggering sensors are made up of 2 ×2 pixels resulting in a total of 64 readout channels. We restrict the COG calculation to a main pixel, which captures most of the scintillation light from a crystal, and its (direct and diagonal) neighboring pixels and reject single events in which this data is not fully available. This results in stable COG positions for a crystal element and enables high spatial image resolution. Due to the sensor layout, for some crystals it is very likely that a single diagonal neighbor pixel is missing as a result of the low light level on the corresponding DPC. This leads to a loss of sensitivity, if these events are rejected. An enhancement of the COG algorithm is proposed which handles the potentially missing pixel separately both for the crystal identification and the energy calculation. Using this advancement, we show that the sensitivity of the Hyperion-II D insert using the described scintillator configuration can be improved by 20-100% for practical useful readout thresholds of a single DPC pixel ranging from 17-52 photons. Furthermore, we show that the energy resolution of the scanner is superior for all readout thresholds if singles with a single missing pixel are accepted and correctly handled compared to the COG method only accepting singles with all neighbors present by 0-1.6% (relative difference). The presented methods can not only be applied to gamma detectors employing DPC sensors, but can be generalized to other similarly structured and self-triggering detectors, using light sharing techniques, as well.

Method and apparatus for determining the coordinates of an object

DOEpatents

Pedersen, Paul S; Sebring, Robert

2003-01-01

A method and apparatus is described for determining the coordinates on the surface of an object which is illuminated by a beam having pixels which have been modulated according to predetermined mathematical relationships with pixel position within the modulator. The reflected illumination is registered by an image sensor at a known location which registers the intensity of the pixels as received. Computations on the intensity, which relate the pixel intensities received to the pixel intensities transmitted at the modulator, yield the proportional loss of intensity and planar position of the originating pixels. The proportional loss and position information can then be utilized within triangulation equations to resolve the coordinates of associated surface locations on the object.

Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process

NASA Astrophysics Data System (ADS)

Zhang, Ying; Zhu, Hongbo; Zhang, Liang; Fu, Min

2016-09-01

The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (Q / C), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 μm CMOS imaging sensor process and we will verify the simulation results with future measurements.

Coarse Scale In Situ Albedo Observations over Heterogeneous Land Surfaces and Validation Strategy

NASA Astrophysics Data System (ADS)

Xiao, Q.; Wu, X.; Wen, J.; BAI, J., Sr.

2017-12-01

To evaluate and improve the quality of coarse-pixel land surface albedo products, validation with ground measurements of albedo is crucial over the spatially and temporally heterogeneous land surface. The performance of albedo validation depends on the quality of ground-based albedo measurements at a corresponding coarse-pixel scale, which can be conceptualized as the "truth" value of albedo at coarse-pixel scale. The wireless sensor network (WSN) technology provides access to continuously observe on the large pixel scale. Taking the albedo products as an example, this paper was dedicated to the validation of coarse-scale albedo products over heterogeneous surfaces based on the WSN observed data, which is aiming at narrowing down the uncertainty of results caused by the spatial scaling mismatch between satellite and ground measurements over heterogeneous surfaces. The reference value of albedo at coarse-pixel scale can be obtained through an upscaling transform function based on all of the observations for that pixel. We will devote to further improve and develop new method that that are better able to account for the spatio-temporal characteristic of surface albedo in the future. Additionally, how to use the widely distributed single site measurements over the heterogeneous surfaces is also a question to be answered. Keywords: Remote sensing; Albedo; Validation; Wireless sensor network (WSN); Upscaling; Heterogeneous land surface; Albedo truth at coarse-pixel scale

A MAPS Based Micro-Vertex Detector for the STAR Experiment

DOE PAGES

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo; ...

2015-06-18

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schambach, Joachim; Anderssen, Eric; Contin, Giacomo

For the 2014 heavy ion run of RHIC a new micro-vertex detector called the Heavy Flavor Tracker (HFT) was installed in the STAR experiment. The HFT consists of three detector subsystems with various silicon technologies arranged in 4 approximately concentric cylinders close to the STAR interaction point designed to improve the STAR detector’s vertex resolution and extend its measurement capabilities in the heavy flavor domain. The two innermost HFT layers are placed at radii of 2.8 cm and 8 cm from the beam line. These layers are constructed with 400 high resolution sensors based on CMOS Monolithic Active Pixel Sensormore » (MAPS) technology arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors to cover a total silicon area of 0.16 m 2. Each sensor of this PiXeL (“PXL”) sub-detector combines a pixel array of 928 rows and 960 columns with a 20.7 μm pixel pitch together with front-end electronics and zero-suppression circuitry in one silicon die providing a sensitive area of ~3.8 cm 2. This sensor architecture features 185.6 μs readout time and 170 mW/cm 2 power dissipation. This low power dissipation allows the PXL detector to be air-cooled, and with the sensors thinned down to 50 μm results in a global material budget of only 0.4% radiation length per layer. A novel mechanical approach to detector insertion allows us to effectively install and integrate the PXL sub-detector within a 12 hour period during an on-going multi-month data taking period. The detector requirements, architecture and design, as well as the performance after installation, are presented in this paper.« less

Ultrathin Quantum Dot Display Integrated with Wearable Electronics.

PubMed

Kim, Jaemin; Shim, Hyung Joon; Yang, Jiwoong; Choi, Moon Kee; Kim, Dong Chan; Kim, Junhee; Hyeon, Taeghwan; Kim, Dae-Hyeong

2017-10-01

An ultrathin skin-attachable display is a critical component for an information output port in next-generation wearable electronics. In this regard, quantum dot (QD) light-emitting diodes (QLEDs) offer unique and attractive characteristics for future displays, including high color purity with narrow bandwidths, high electroluminescence (EL) brightness at low operating voltages, and easy processability. Here, ultrathin QLED displays that utilize a passive matrix to address individual pixels are reported. The ultrathin thickness (≈5.5 µm) of the QLED display enables its conformal contact with the wearer's skin and prevents its failure under vigorous mechanical deformation. QDs with relatively thick shells are employed to improve EL characteristics (brightness up to 44 719 cd m -2 at 9 V, which is the record highest among wearable LEDs reported to date) by suppressing the nonradiative recombination. Various patterns, including letters, numbers, and symbols can be successfully visualized on the skin-mounted QLED display. Furthermore, the combination of the ultrathin QLED display with flexible driving circuits and wearable sensors results in a fully integrated QLED display that can directly show sensor data. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

PubMed

Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

2014-07-07

Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, x-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications.

Development of monolithic pixel detector with SOI technology for the ILC vertex detector

NASA Astrophysics Data System (ADS)

Yamada, M.; Ono, S.; Tsuboyama, T.; Arai, Y.; Haba, J.; Ikegami, Y.; Kurachi, I.; Togawa, M.; Mori, T.; Aoyagi, W.; Endo, S.; Hara, K.; Honda, S.; Sekigawa, D.

2018-01-01

We have been developing a monolithic pixel sensor for the International Linear Collider (ILC) vertex detector with the 0.2 μm FD-SOI CMOS process by LAPIS Semiconductor Co., Ltd. We aim to achieve a 3 μm single-point resolution required for the ILC with a 20×20 μm2 pixel. Beam bunch crossing at the ILC occurs every 554 ns in 1-msec-long bunch trains with an interval of 200 ms. Each pixel must record the charge and time stamp of a hit to identify a collision bunch for event reconstruction. Necessary functions include the amplifier, comparator, shift register, analog memory and time stamp implementation in each pixel, and column ADC and Zero-suppression logic on the chip. We tested the first prototype sensor, SOFIST ver.1, with a 120 GeV proton beam at the Fermilab Test Beam Facility in January 2017. SOFIST ver.1 has a charge sensitive amplifier and two analog memories in each pixel, and an 8-bit Wilkinson-type ADC is implemented for each column on the chip. We measured the residual of the hit position to the reconstructed track. The standard deviation of the residual distribution fitted by a Gaussian is better than 3 μm.

Image sensor with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2006-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors.

PubMed

Ge, Xiaoliang; Theuwissen, Albert J P

2018-02-27

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models.

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

PubMed

Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

2017-06-19

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors †

PubMed Central

Theuwissen, Albert J. P.

2018-01-01

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models. PMID:29495496

Using Polynomials to Simplify Fixed Pattern Noise and Photometric Correction of Logarithmic CMOS Image Sensors

PubMed Central

Li, Jing; Mahmoodi, Alireza; Joseph, Dileepan

2015-01-01

An important class of complementary metal-oxide-semiconductor (CMOS) image sensors are those where pixel responses are monotonic nonlinear functions of light stimuli. This class includes various logarithmic architectures, which are easily capable of wide dynamic range imaging, at video rates, but which are vulnerable to image quality issues. To minimize fixed pattern noise (FPN) and maximize photometric accuracy, pixel responses must be calibrated and corrected due to mismatch and process variation during fabrication. Unlike literature approaches, which employ circuit-based models of varying complexity, this paper introduces a novel approach based on low-degree polynomials. Although each pixel may have a highly nonlinear response, an approximately-linear FPN calibration is possible by exploiting the monotonic nature of imaging. Moreover, FPN correction requires only arithmetic, and an optimal fixed-point implementation is readily derived, subject to a user-specified number of bits per pixel. Using a monotonic spline, involving cubic polynomials, photometric calibration is also possible without a circuit-based model, and fixed-point photometric correction requires only a look-up table. The approach is experimentally validated with a logarithmic CMOS image sensor and is compared to a leading approach from the literature. The novel approach proves effective and efficient. PMID:26501287

Sub-pixel image classification for forest types in East Texas

NASA Astrophysics Data System (ADS)

Westbrook, Joey

Sub-pixel classification is the extraction of information about the proportion of individual materials of interest within a pixel. Landcover classification at the sub-pixel scale provides more discrimination than traditional per-pixel multispectral classifiers for pixels where the material of interest is mixed with other materials. It allows for the un-mixing of pixels to show the proportion of each material of interest. The materials of interest for this study are pine, hardwood, mixed forest and non-forest. The goal of this project was to perform a sub-pixel classification, which allows a pixel to have multiple labels, and compare the result to a traditional supervised classification, which allows a pixel to have only one label. The satellite image used was a Landsat 5 Thematic Mapper (TM) scene of the Stephen F. Austin Experimental Forest in Nacogdoches County, Texas and the four cover type classes are pine, hardwood, mixed forest and non-forest. Once classified, a multi-layer raster datasets was created that comprised four raster layers where each layer showed the percentage of that cover type within the pixel area. Percentage cover type maps were then produced and the accuracy of each was assessed using a fuzzy error matrix for the sub-pixel classifications, and the results were compared to the supervised classification in which a traditional error matrix was used. The overall accuracy of the sub-pixel classification using the aerial photo for both training and reference data had the highest (65% overall) out of the three sub-pixel classifications. This was understandable because the analyst can visually observe the cover types actually on the ground for training data and reference data, whereas using the FIA (Forest Inventory and Analysis) plot data, the analyst must assume that an entire pixel contains the exact percentage of a cover type found in a plot. An increase in accuracy was found after reclassifying each sub-pixel classification from nine classes with 10 percent interval each to five classes with 20 percent interval each. When compared to the supervised classification which has a satisfactory overall accuracy of 90%, none of the sub-pixel classification achieved the same level. However, since traditional per-pixel classifiers assign only one label to pixels throughout the landscape while sub-pixel classifications assign multiple labels to each pixel, the traditional 85% accuracy of acceptance for pixel-based classifications should not apply to sub-pixel classifications. More research is needed in order to define the level of accuracy that is deemed acceptable for sub-pixel classifications.

Sensor development at the semiconductor laboratory of the Max-Planck-Society

NASA Astrophysics Data System (ADS)

Bähr, A.; Lechner, P.; Ninkovic, J.

2017-12-01

For more than twenty years the semiconductor laboratory of the Max-Planck Society (MPG-HLL) is developing high-performing, specialised, scientific silicon sensors including the integration of amplifying electronics on the sensor chip. This paper summarises the actual status of these devices like pnCCDs and DePFET Active Pixel Sensors and their applications.

A Sensitive Dynamic and Active Pixel Vision Sensor for Color or Neural Imaging Applications.

PubMed

Moeys, Diederik Paul; Corradi, Federico; Li, Chenghan; Bamford, Simeon A; Longinotti, Luca; Voigt, Fabian F; Berry, Stewart; Taverni, Gemma; Helmchen, Fritjof; Delbruck, Tobi

2018-02-01

Applications requiring detection of small visual contrast require high sensitivity. Event cameras can provide higher dynamic range (DR) and reduce data rate and latency, but most existing event cameras have limited sensitivity. This paper presents the results of a 180-nm Towerjazz CIS process vision sensor called SDAVIS192. It outputs temporal contrast dynamic vision sensor (DVS) events and conventional active pixel sensor frames. The SDAVIS192 improves on previous DAVIS sensors with higher sensitivity for temporal contrast. The temporal contrast thresholds can be set down to 1% for negative changes in logarithmic intensity (OFF events) and down to 3.5% for positive changes (ON events). The achievement is possible through the adoption of an in-pixel preamplification stage. This preamplifier reduces the effective intrascene DR of the sensor (70 dB for OFF and 50 dB for ON), but an automated operating region control allows up to at least 110-dB DR for OFF events. A second contribution of this paper is the development of characterization methodology for measuring DVS event detection thresholds by incorporating a measure of signal-to-noise ratio (SNR). At average SNR of 30 dB, the DVS temporal contrast threshold fixed pattern noise is measured to be 0.3%-0.8% temporal contrast. Results comparing monochrome and RGBW color filter array DVS events are presented. The higher sensitivity of SDAVIS192 make this sensor potentially useful for calcium imaging, as shown in a recording from cultured neurons expressing calcium sensitive green fluorescent protein GCaMP6f.

Compressed sensing with cyclic-S Hadamard matrix for terahertz imaging applications

NASA Astrophysics Data System (ADS)

Ermeydan, Esra Şengün; ćankaya, Ilyas

2018-01-01

Compressed Sensing (CS) with Cyclic-S Hadamard matrix is proposed for single pixel imaging applications in this study. In single pixel imaging scheme, N = r . c samples should be taken for r×c pixel image where . denotes multiplication. CS is a popular technique claiming that the sparse signals can be reconstructed with samples under Nyquist rate. Therefore to solve the slow data acquisition problem in Terahertz (THz) single pixel imaging, CS is a good candidate. However, changing mask for each measurement is a challenging problem since there is no commercial Spatial Light Modulators (SLM) for THz band yet, therefore circular masks are suggested so that for each measurement one or two column shifting will be enough to change the mask. The CS masks are designed using cyclic-S matrices based on Hadamard transform for 9 × 7 and 15 × 17 pixel images within the framework of this study. The %50 compressed images are reconstructed using total variation based TVAL3 algorithm. Matlab simulations demonstrates that cyclic-S matrices can be used for single pixel imaging based on CS. The circular masks have the advantage to reduce the mechanical SLMs to a single sliding strip, whereas the CS helps to reduce acquisition time and energy since it allows to reconstruct the image from fewer samples.

A novel image encryption algorithm based on synchronized random bit generated in cascade-coupled chaotic semiconductor ring lasers

NASA Astrophysics Data System (ADS)

Li, Jiafu; Xiang, Shuiying; Wang, Haoning; Gong, Junkai; Wen, Aijun

2018-03-01

In this paper, a novel image encryption algorithm based on synchronization of physical random bit generated in a cascade-coupled semiconductor ring lasers (CCSRL) system is proposed, and the security analysis is performed. In both transmitter and receiver parts, the CCSRL system is a master-slave configuration consisting of a master semiconductor ring laser (M-SRL) with cross-feedback and a solitary SRL (S-SRL). The proposed image encryption algorithm includes image preprocessing based on conventional chaotic maps, pixel confusion based on control matrix extracted from physical random bit, and pixel diffusion based on random bit stream extracted from physical random bit. Firstly, the preprocessing method is used to eliminate the correlation between adjacent pixels. Secondly, physical random bit with verified randomness is generated based on chaos in the CCSRL system, and is used to simultaneously generate the control matrix and random bit stream. Finally, the control matrix and random bit stream are used for the encryption algorithm in order to change the position and the values of pixels, respectively. Simulation results and security analysis demonstrate that the proposed algorithm is effective and able to resist various typical attacks, and thus is an excellent candidate for secure image communication application.

Contrast computation methods for interferometric measurement of sensor modulation transfer function

NASA Astrophysics Data System (ADS)

Battula, Tharun; Georgiev, Todor; Gille, Jennifer; Goma, Sergio

2018-01-01

Accurate measurement of image-sensor frequency response over a wide range of spatial frequencies is very important for analyzing pixel array characteristics, such as modulation transfer function (MTF), crosstalk, and active pixel shape. Such analysis is especially significant in computational photography for the purposes of deconvolution, multi-image superresolution, and improved light-field capture. We use a lensless interferometric setup that produces high-quality fringes for measuring MTF over a wide range of frequencies (here, 37 to 434 line pairs per mm). We discuss the theoretical framework, involving Michelson and Fourier contrast measurement of the MTF, addressing phase alignment problems using a moiré pattern. We solidify the definition of Fourier contrast mathematically and compare it to Michelson contrast. Our interferometric measurement method shows high detail in the MTF, especially at high frequencies (above Nyquist frequency). We are able to estimate active pixel size and pixel pitch from measurements. We compare both simulation and experimental MTF results to a lens-free slanted-edge implementation using commercial software.

Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters.

PubMed

Yu, Yan; Chen, Qin; Wen, Long; Hu, Xin; Zhang, Hui-Fang

2015-08-24

Imaging resolution of complementary metal oxide semiconductor (CMOS) image sensor (CIS) keeps increasing to approximately 7k × 4k. As a result, the pixel size shrinks down to sub-2μm, which greatly increases the spatial optical crosstalk. Recently, plasmonic color filter was proposed as an alternative to conventional colorant pigmented ones. However, there is little work on its size effect and the spatial optical crosstalk in a model of CIS. By numerical simulation, we investigate the size effect of nanocross array plasmonic color filters and analyze the spatial optical crosstalk of each pixel in a Bayer array of a CIS with a pixel size of 1μm. It is found that the small pixel size deteriorates the filtering performance of nanocross color filters and induces substantial spatial color crosstalk. By integrating the plasmonic filters in the low Metal layer in standard CMOS process, the crosstalk reduces significantly, which is compatible to pigmented filters in a state-of-the-art backside illumination CIS.

Lensfree on-chip microscopy over a wide field-of-view using pixel super-resolution

PubMed Central

Bishara, Waheb; Su, Ting-Wei; Coskun, Ahmet F.; Ozcan, Aydogan

2010-01-01

We demonstrate lensfree holographic microscopy on a chip to achieve ~0.6 µm spatial resolution corresponding to a numerical aperture of ~0.5 over a large field-of-view of ~24 mm2. By using partially coherent illumination from a large aperture (~50 µm), we acquire lower resolution lensfree in-line holograms of the objects with unit fringe magnification. For each lensfree hologram, the pixel size at the sensor chip limits the spatial resolution of the reconstructed image. To circumvent this limitation, we implement a sub-pixel shifting based super-resolution algorithm to effectively recover much higher resolution digital holograms of the objects, permitting sub-micron spatial resolution to be achieved across the entire sensor chip active area, which is also equivalent to the imaging field-of-view (24 mm2) due to unit magnification. We demonstrate the success of this pixel super-resolution approach by imaging patterned transparent substrates, blood smear samples, as well as Caenoharbditis Elegans. PMID:20588977

Fabrication of Transition Edge Sensor Microcalorimeters for X-Ray Focal Planes

NASA Technical Reports Server (NTRS)

Chervenak, James A.; Adams, Joseph S.; Audley, Heather; Bandler, Simon R.; Betancourt-Martinez, Gabriele; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline; Lee, Sang Jun;

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

2017-03-07

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

NASA Astrophysics Data System (ADS)

Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

2017-03-01

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Study of prototypes of LFoundry active CMOS pixels sensors for the ATLAS detector

NASA Astrophysics Data System (ADS)

Vigani, L.; Bortoletto, D.; Ambroz, L.; Plackett, R.; Hemperek, T.; Rymaszewski, P.; Wang, T.; Krueger, H.; Hirono, T.; Caicedo Sierra, I.; Wermes, N.; Barbero, M.; Bhat, S.; Breugnon, P.; Chen, Z.; Godiot, S.; Pangaud, P.; Rozanov, A.

2018-02-01

Current high energy particle physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip configurations, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in depleted CMOS silicon detectors, which could achieve a similar performance at lower cost of production. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, are shown.

Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

NASA Astrophysics Data System (ADS)

Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

2012-01-01

We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.

An active pixel sensor to detect diffused X-ray during Interventional Radiology procedure

NASA Astrophysics Data System (ADS)

Servoli, L.; Battisti, D.; Biasini, M.; Checcucci, B.; Conti, E.; Di Lorenzo, R.; Esposito, A.; Fanò, L.; Paolucci, M.; Passeri, D.; Pentiricci, A.; Placidi, P.

2012-04-01

Interventional radiologists and staff members are frequently exposed to protracted and fractionated low doses of ionizing radiation due to diffused X-ray radiation. The authors propose a novel approach to monitor on line staff during their interventions by using a device based on an Active Pixel Sensor developed for tracking applications. Two different photodiode configurations have been tested in standard Interventional Radiology working conditions. Both options have demonstrated the capability to measure the photon flux and the energy flux to a sufficient degree of uncertainty.

Characterization of the ePix100 prototype: a front-end ASIC for second-generation LCLS integrating hybrid pixel detectors

NASA Astrophysics Data System (ADS)

Caragiulo, P.; Dragone, A.; Markovic, B.; Herbst, R.; Nishimura, K.; Reese, B.; Herrmann, S.; Hart, P.; Blaj, G.; Segal, J.; Tomada, A.; Hasi, J.; Carini, G.; Kenney, C.; Haller, G.

2014-09-01

ePix100 is the first variant of a novel class of integrating pixel ASICs architectures optimized for the processing of signals in second generation LINAC Coherent Light Source (LCLS) X-Ray cameras. ePix100 is optimized for ultra-low noise application requiring high spatial resolution. ePix ASICs are based on a common platform composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog to digital converters per column. The ePix100 variant has 50μmx50μm pixels arranged in a 352x384 matrix, a resolution of 50e- r.m.s. and a signal range of 35fC (100 photons at 8keV). In its final version it will be able to sustain a frame rate of 1kHz. A first prototype has been fabricated and characterized and the measurement results are reported here.

The EO-1 hyperion and advanced land imager sensors for use in tundra classification studies within the Upper Kuparuk River Basin, Alaska

NASA Astrophysics Data System (ADS)

Hall-Brown, Mary

The heterogeneity of Arctic vegetation can make land cover classification vey difficult when using medium to small resolution imagery (Schneider et al., 2009; Muller et al., 1999). Using high radiometric and spatial resolution imagery, such as the SPOT 5 and IKONOS satellites, have helped arctic land cover classification accuracies rise into the 80 and 90 percentiles (Allard, 2003; Stine et al., 2010; Muller et al., 1999). However, those increases usually come at a high price. High resolution imagery is very expensive and can often add tens of thousands of dollars onto the cost of the research. The EO-1 satellite launched in 2002 carries two sensors that have high specral and/or high spatial resolutions and can be an acceptable compromise between the resolution versus cost issues. The Hyperion is a hyperspectral sensor with the capability of collecting 242 spectral bands of information. The Advanced Land Imager (ALI) is an advanced multispectral sensor whose spatial resolution can be sharpened to 10 meters. This dissertation compares the accuracies of arctic land cover classifications produced by the Hyperion and ALI sensors to the classification accuracies produced by the Systeme Pour l' Observation de le Terre (SPOT), the Landsat Thematic Mapper (TM) and the Landsat Enhanced Thematic Mapper Plus (ETM+) sensors. Hyperion and ALI images from August 2004 were collected over the Upper Kuparuk River Basin, Alaska. Image processing included the stepwise discriminant analysis of pixels that were positively classified from coinciding ground control points, geometric and radiometric correction, and principle component analysis. Finally, stratified random sampling was used to perform accuracy assessments on satellite derived land cover classifications. Accuracy was estimated from an error matrix (confusion matrix) that provided the overall, producer's and user's accuracies. This research found that while the Hyperion sensor produced classfication accuracies that were equivalent to the TM and ETM+ sensor (approximately 78%), the Hyperion could not obtain the accuracy of the SPOT 5 HRV sensor. However, the land cover classifications derived from the ALI sensor exceeded most classification accuracies derived from the TM and ETM+ senors and were even comparable to most SPOT 5 HRV classifications (87%). With the deactivation of the Landsat series satellites, the monitoring of remote locations such as in the Arctic on an uninterupted basis thoughout the world is in jeopardy. The utilization of the Hyperion and ALI sensors are a way to keep that endeavor operational. By keeping the ALI sensor active at all times, uninterupted observation of the entire Earth can be accomplished. Keeping the Hyperion sensor as a "tasked" sensor can provide scientists with additional imagery and options for their studies without overburdening storage issues.

CMOS Image Sensors for High Speed Applications.

PubMed

El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

2009-01-01

Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

Pixel-super-resolved lensfree holography using adaptive relaxation factor and positional error correction

NASA Astrophysics Data System (ADS)

Zhang, Jialin; Chen, Qian; Sun, Jiasong; Li, Jiaji; Zuo, Chao

2018-01-01

Lensfree holography provides a new way to effectively bypass the intrinsical trade-off between the spatial resolution and field-of-view (FOV) of conventional lens-based microscopes. Unfortunately, due to the limited sensor pixel-size, unpredictable disturbance during image acquisition, and sub-optimum solution to the phase retrieval problem, typical lensfree microscopes only produce compromised imaging quality in terms of lateral resolution and signal-to-noise ratio (SNR). In this paper, we propose an adaptive pixel-super-resolved lensfree imaging (APLI) method to address the pixel aliasing problem by Z-scanning only, without resorting to subpixel shifting or beam-angle manipulation. Furthermore, an automatic positional error correction algorithm and adaptive relaxation strategy are introduced to enhance the robustness and SNR of reconstruction significantly. Based on APLI, we perform full-FOV reconstruction of a USAF resolution target across a wide imaging area of {29.85 mm2 and achieve half-pitch lateral resolution of 770 nm, surpassing 2.17 times of the theoretical Nyquist-Shannon sampling resolution limit imposed by the sensor pixel-size (1.67 μm). Full-FOV imaging result of a typical dicot root is also provided to demonstrate its promising potential applications in biologic imaging.

Blind identification of full-field vibration modes from video measurements with phase-based video motion magnification

NASA Astrophysics Data System (ADS)

Yang, Yongchao; Dorn, Charles; Mancini, Tyler; Talken, Zachary; Kenyon, Garrett; Farrar, Charles; Mascareñas, David

2017-02-01

Experimental or operational modal analysis traditionally requires physically-attached wired or wireless sensors for vibration measurement of structures. This instrumentation can result in mass-loading on lightweight structures, and is costly and time-consuming to install and maintain on large civil structures, especially for long-term applications (e.g., structural health monitoring) that require significant maintenance for cabling (wired sensors) or periodic replacement of the energy supply (wireless sensors). Moreover, these sensors are typically placed at a limited number of discrete locations, providing low spatial sensing resolution that is hardly sufficient for modal-based damage localization, or model correlation and updating for larger-scale structures. Non-contact measurement methods such as scanning laser vibrometers provide high-resolution sensing capacity without the mass-loading effect; however, they make sequential measurements that require considerable acquisition time. As an alternative non-contact method, digital video cameras are relatively low-cost, agile, and provide high spatial resolution, simultaneous, measurements. Combined with vision based algorithms (e.g., image correlation, optical flow), video camera based measurements have been successfully used for vibration measurements and subsequent modal analysis, based on techniques such as the digital image correlation (DIC) and the point-tracking. However, they typically require speckle pattern or high-contrast markers to be placed on the surface of structures, which poses challenges when the measurement area is large or inaccessible. This work explores advanced computer vision and video processing algorithms to develop a novel video measurement and vision-based operational (output-only) modal analysis method that alleviate the need of structural surface preparation associated with existing vision-based methods and can be implemented in a relatively efficient and autonomous manner with little user supervision and calibration. First a multi-scale image processing method is applied on the frames of the video of a vibrating structure to extract the local pixel phases that encode local structural vibration, establishing a full-field spatiotemporal motion matrix. Then a high-spatial dimensional, yet low-modal-dimensional, over-complete model is used to represent the extracted full-field motion matrix using modal superposition, which is physically connected and manipulated by a family of unsupervised learning models and techniques, respectively. Thus, the proposed method is able to blindly extract modal frequencies, damping ratios, and full-field (as many points as the pixel number of the video frame) mode shapes from line of sight video measurements of the structure. The method is validated by laboratory experiments on a bench-scale building structure and a cantilever beam. Its ability for output (video measurements)-only identification and visualization of the weakly-excited mode is demonstrated and several issues with its implementation are discussed.

Coded aperture detector: an image sensor with sub 20-nm pixel resolution.

PubMed

Miyakawa, Ryan; Mayer, Rafael; Wojdyla, Antoine; Vannier, Nicolas; Lesser, Ian; Aron-Dine, Shifrah; Naulleau, Patrick

2014-08-11

We describe the coded aperture detector, a novel image sensor based on uniformly redundant arrays (URAs) with customizable pixel size, resolution, and operating photon energy regime. In this sensor, a coded aperture is scanned laterally at the image plane of an optical system, and the transmitted intensity is measured by a photodiode. The image intensity is then digitally reconstructed using a simple convolution. We present results from a proof-of-principle optical prototype, demonstrating high-fidelity image sensing comparable to a CCD. A 20-nm half-pitch URA fabricated by the Center for X-ray Optics (CXRO) nano-fabrication laboratory is presented that is suitable for high-resolution image sensing at EUV and soft X-ray wavelengths.

Establishing imaging sensor specifications for digital still cameras

NASA Astrophysics Data System (ADS)

Kriss, Michael A.

2007-02-01

Digital Still Cameras, DSCs, have now displaced conventional still cameras in most markets. The heart of a DSC is thought to be the imaging sensor, be it Full Frame CCD, and Interline CCD, a CMOS sensor or the newer Foveon buried photodiode sensors. There is a strong tendency by consumers to consider only the number of mega-pixels in a camera and not to consider the overall performance of the imaging system, including sharpness, artifact control, noise, color reproduction, exposure latitude and dynamic range. This paper will provide a systematic method to characterize the physical requirements of an imaging sensor and supporting system components based on the desired usage. The analysis is based on two software programs that determine the "sharpness", potential for artifacts, sensor "photographic speed", dynamic range and exposure latitude based on the physical nature of the imaging optics, sensor characteristics (including size of pixels, sensor architecture, noise characteristics, surface states that cause dark current, quantum efficiency, effective MTF, and the intrinsic full well capacity in terms of electrons per square centimeter). Examples will be given for consumer, pro-consumer, and professional camera systems. Where possible, these results will be compared to imaging system currently on the market.

Characterisation of crystal matrices and single pixels for nuclear medicine applications

NASA Astrophysics Data System (ADS)

Herbert, D. J.; Belcari, N.; Camarda, M.; Guerra, A. Del; Vaiano, A.

2005-01-01

Commercially constructed crystal matrices are characterised for use with PSPMT detectors for PET system developments and other nuclear medicine applications. The matrices of different scintillation materials were specified with pixel dimensions of 1.5×1.5 mm2 in cross-section and a length corresponding to one gamma ray interaction length at 511 keV. The materials used in this study were BGO, LSO, LYSO, YSO and CsI(Na). Each matrix was constructed using a white TiO loaded epoxy that forms a 0.2 mm septa between each pixel. The white epoxy is not the optimum choice in terms of the reflective properties, but represents a good compromise between cost and the need for optical isolation between pixels. We also tested a YAP matrix that consisted of pixels of the same size specification but was manufactured by a different company, who instead of white epoxy, used a thin aluminium reflective layer for optical isolation that resulted in a septal thickness of just 0.01 mm, resulting in a much higher packing fraction. The characteristics of the scintillation materials, such as the light output and energy resolution, were first studied in the form of individual crystal elements by using a single pixel HPD. A comparison of individual pixels with and without the epoxy/dielectric coatings was also performed. Then the matrices themselves were coupled to a PSPMT in order to study the imaging performance. In particular, the system pixel resolution and the peak to valley ratio were measured at 511 and 122 keV.

Human skin based triboelectric nanogenerators for harvesting biomechanical energy and as self-powered active tactile sensor system.

PubMed

Yang, Ya; Zhang, Hulin; Lin, Zong-Hong; Zhou, Yu Sheng; Jing, Qingshen; Su, Yuanjie; Yang, Jin; Chen, Jun; Hu, Chenguo; Wang, Zhong Lin

2013-10-22

We report human skin based triboelectric nanogenerators (TENG) that can either harvest biomechanical energy or be utilized as a self-powered tactile sensor system for touch pad technology. We constructed a TENG utilizing the contact/separation between an area of human skin and a polydimethylsiloxane (PDMS) film with a surface of micropyramid structures, which was attached to an ITO electrode that was grounded across a loading resistor. The fabricated TENG delivers an open-circuit voltage up to -1000 V, a short-circuit current density of 8 mA/m(2), and a power density of 500 mW/m(2) on a load of 100 MΩ, which can be used to directly drive tens of green light-emitting diodes. The working mechanism of the TENG is based on the charge transfer between the ITO electrode and ground via modulating the separation distance between the tribo-charged skin patch and PDMS film. Furthermore, the TENG has been used in designing an independently addressed matrix for tracking the location and pressure of human touch. The fabricated matrix has demonstrated its self-powered and high-resolution tactile sensing capabilities by recording the output voltage signals as a mapping figure, where the detection sensitivity of the pressure is about 0.29 ± 0.02 V/kPa and each pixel can have a size of 3 mm × 3 mm. The TENGs may have potential applications in human-machine interfacing, micro/nano-electromechanical systems, and touch pad technology.

A Spectralon BRF Data Base for MISR Calibration Application

NASA Technical Reports Server (NTRS)

Bruegge, C.; Chrien, N.; Haner, D.

1999-01-01

The Multi-angle Imaging SpectroRadiometer (MISR) is an Earth observing sensor which will provide global retrievals of aerosols, clouds, and land surface parameters. Instrument specifications require high accuracy absolute calibration, as well as accurate camera-to-camera, band-to-band and pixel-to-pixel relative response determinations.

An ultra-low power self-timed column-level ADC for a CMOS pixel sensor based vertex detector

NASA Astrophysics Data System (ADS)

Zhang, L.; Wang, M.

2014-11-01

The International Large Detector (ILD) is a detector concept for the future linear collider experiment. The vertex detector is the key tool to achieve high precision measurements for flavor tagging, which puts stringent requirements on the CMOS pixel sensors. Due to the cooling systems which deteriorate the material budget and increase the multiple scattering, it is important to reduce the power consumption. This paper presents an ultra-low power self-timed column-level ADC for the CMOS pixel sensors, aiming to equip the outer layers of the vertex detector. The ADC was designed to operate in two modes (active and idle) adapted to the low hit density in the outer layers. The architecture employs an enhanced sample-and-hold circuit and a self-timed technique. The total power consumption with a 3-V supply is 225μW during idle mode, which is the most frequent situation. This value rises to 425μW in the case of the active mode. It occupies an area of 35 × 590μm2.

A high sensitivity 20Mfps CMOS image sensor with readout speed of 1Tpixel/sec for visualization of ultra-high speed phenomena

NASA Astrophysics Data System (ADS)

Kuroda, R.; Sugawa, S.

2017-02-01

Ultra-high speed (UHS) CMOS image sensors with on-chop analog memories placed on the periphery of pixel array for the visualization of UHS phenomena are overviewed in this paper. The developed UHS CMOS image sensors consist of 400H×256V pixels and 128 memories/pixel, and the readout speed of 1Tpixel/sec is obtained, leading to 10 Mfps full resolution video capturing with consecutive 128 frames, and 20 Mfps half resolution video capturing with consecutive 256 frames. The first development model has been employed in the high speed video camera and put in practical use in 2012. By the development of dedicated process technologies, photosensitivity improvement and power consumption reduction were simultaneously achieved, and the performance improved version has been utilized in the commercialized high-speed video camera since 2015 that offers 10 Mfps with ISO16,000 photosensitivity. Due to the improved photosensitivity, clear images can be captured and analyzed even under low light condition, such as under a microscope as well as capturing of UHS light emission phenomena.

Silicon pixel R&D for CLIC

NASA Astrophysics Data System (ADS)

Munker, M.

2017-01-01

Challenging detector requirements are imposed by the physics goals at the future multi-TeV e+ e- Compact Linear Collider (CLIC). A single point resolution of 3 μm for the vertex detector and 7 μm for the tracker is required. Moreover, the CLIC vertex detector and tracker need to be extremely light weighted with a material budget of 0.2% X0 per layer in the vertex detector and 1-2% X0 in the tracker. A fast time slicing of 10 ns is further required to suppress background from beam-beam interactions. A wide range of sensor and readout ASIC technologies are investigated within the CLIC silicon pixel R&D effort. Various hybrid planar sensor assemblies with a pixel size of 25×25 μm2 and 55×55 μm2 have been produced and characterised by laboratory measurements and during test-beam campaigns. Experimental and simulation results for thin (50 μm-500 μm) slim edge and active-edge planar, and High-Voltage CMOS sensors hybridised to various readout ASICs (Timepix, Timepix3, CLICpix) are presented.

Imaging system design and image interpolation based on CMOS image sensor

NASA Astrophysics Data System (ADS)

Li, Yu-feng; Liang, Fei; Guo, Rui

2009-11-01

An image acquisition system is introduced, which consists of a color CMOS image sensor (OV9620), SRAM (CY62148), CPLD (EPM7128AE) and DSP (TMS320VC5509A). The CPLD implements the logic and timing control to the system. SRAM stores the image data, and DSP controls the image acquisition system through the SCCB (Omni Vision Serial Camera Control Bus). The timing sequence of the CMOS image sensor OV9620 is analyzed. The imaging part and the high speed image data memory unit are designed. The hardware and software design of the image acquisition and processing system is given. CMOS digital cameras use color filter arrays to sample different spectral components, such as red, green, and blue. At the location of each pixel only one color sample is taken, and the other colors must be interpolated from neighboring samples. We use the edge-oriented adaptive interpolation algorithm for the edge pixels and bilinear interpolation algorithm for the non-edge pixels to improve the visual quality of the interpolated images. This method can get high processing speed, decrease the computational complexity, and effectively preserve the image edges.

Advanced testing of the DEPFET minimatrix particle detector

NASA Astrophysics Data System (ADS)

Andricek, L.; Kodyš, P.; Koffmane, C.; Ninkovic, J.; Oswald, C.; Richter, R.; Ritter, A.; Rummel, S.; Scheirich, J.; Wassatsch, A.

2012-01-01

The DEPFET (DEPleted Field Effect Transistor) is an active pixel particle detector with a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated in each pixel, providing first amplification stage of readout electronics. Excellent signal over noise performance is gained this way. The DEPFET sensor will be used as a vertex detector in the Belle II experiment at SuperKEKB, electron-positron collider in Japan. The vertex detector will be composed of two layers of pixel detectors (DEPFET) and four layers of strip detectors. The DEPFET sensor requires switching and current readout circuits for its operation. These circuits have been designed as ASICs (Application Specific Integrated Circuits) in several different versions, but they provide insufficient flexibility for precise detector testing. Therefore, a test system with a flexible control cycle range and minimal noise has been designed for testing and characterizing of small detector prototypes (Minimatrices). Sensors with different design layouts and thicknesses are produced in order to evaluate and select the one with the best performance for the Belle II application. Description of the test system as well as measurement results are presented.

A programmable computational image sensor for high-speed vision

NASA Astrophysics Data System (ADS)

Yang, Jie; Shi, Cong; Long, Xitian; Wu, Nanjian

2013-08-01

In this paper we present a programmable computational image sensor for high-speed vision. This computational image sensor contains four main blocks: an image pixel array, a massively parallel processing element (PE) array, a row processor (RP) array and a RISC core. The pixel-parallel PE is responsible for transferring, storing and processing image raw data in a SIMD fashion with its own programming language. The RPs are one dimensional array of simplified RISC cores, it can carry out complex arithmetic and logic operations. The PE array and RP array can finish great amount of computation with few instruction cycles and therefore satisfy the low- and middle-level high-speed image processing requirement. The RISC core controls the whole system operation and finishes some high-level image processing algorithms. We utilize a simplified AHB bus as the system bus to connect our major components. Programming language and corresponding tool chain for this computational image sensor are also developed.

Multi-Sensor Registration of Earth Remotely Sensed Imagery

NASA Technical Reports Server (NTRS)

LeMoigne, Jacqueline; Cole-Rhodes, Arlene; Eastman, Roger; Johnson, Kisha; Morisette, Jeffrey; Netanyahu, Nathan S.; Stone, Harold S.; Zavorin, Ilya; Zukor, Dorothy (Technical Monitor)

2001-01-01

Assuming that approximate registration is given within a few pixels by a systematic correction system, we develop automatic image registration methods for multi-sensor data with the goal of achieving sub-pixel accuracy. Automatic image registration is usually defined by three steps; feature extraction, feature matching, and data resampling or fusion. Our previous work focused on image correlation methods based on the use of different features. In this paper, we study different feature matching techniques and present five algorithms where the features are either original gray levels or wavelet-like features, and the feature matching is based on gradient descent optimization, statistical robust matching, and mutual information. These algorithms are tested and compared on several multi-sensor datasets covering one of the EOS Core Sites, the Konza Prairie in Kansas, from four different sensors: IKONOS (4m), Landsat-7/ETM+ (30m), MODIS (500m), and SeaWIFS (1000m).

Architecture and applications of a high resolution gated SPAD image sensor

PubMed Central

Burri, Samuel; Maruyama, Yuki; Michalet, Xavier; Regazzoni, Francesco; Bruschini, Claudio; Charbon, Edoardo

2014-01-01

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be increased to 30% with the use of microlenses. For precise control of the exposure and for time-resolved imaging, we use fast global gating signals to define exposure windows as small as 4 ns. The uniformity of the gate edges location is ∼140 ps (FWHM) over the whole array, while in-pixel digital counting enables frame rates as high as 156 kfps. Currently, our camera is used as a highly sensitive sensor with high temporal resolution, for applications ranging from fluorescence lifetime measurements to fluorescence correlation spectroscopy and generation of true random numbers. PMID:25090572

A CMOS image sensor with stacked photodiodes for lensless observation system of digital enzyme-linked immunosorbent assay

NASA Astrophysics Data System (ADS)

Takehara, Hironari; Miyazawa, Kazuya; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Kim, Soo Hyeon; Iino, Ryota; Noji, Hiroyuki; Ohta, Jun

2014-01-01

A CMOS image sensor with stacked photodiodes was fabricated using 0.18 µm mixed signal CMOS process technology. Two photodiodes were stacked at the same position of each pixel of the CMOS image sensor. The stacked photodiodes consist of shallow high-concentration N-type layer (N+), P-type well (PW), deep N-type well (DNW), and P-type substrate (P-sub). PW and P-sub were shorted to ground. By monitoring the voltage of N+ and DNW individually, we can observe two monochromatic colors simultaneously without using any color filters. The CMOS image sensor is suitable for fluorescence imaging, especially contact imaging such as a lensless observation system of digital enzyme-linked immunosorbent assay (ELISA). Since the fluorescence increases with time in digital ELISA, it is possible to observe fluorescence accurately by calculating the difference from the initial relation between the pixel values for both photodiodes.

Using Multiple Robust Parameter Design Techniques to Improve Hyperspectral Anomaly Detection Algorithm Performance

DTIC Science & Technology

2009-03-01

Set negative pixel values = 0 (remove bad pixels) -------------- [m,n] = size(data_matrix_new); for i =1:m for j= 1:n if...everything from packaging toothpaste to high speed fluid dynamics. While future engagements will continue to require the development of specialized

A novel chaotic image encryption scheme using DNA sequence operations

NASA Astrophysics Data System (ADS)

Wang, Xing-Yuan; Zhang, Ying-Qian; Bao, Xue-Mei

2015-10-01

In this paper, we propose a novel image encryption scheme based on DNA (Deoxyribonucleic acid) sequence operations and chaotic system. Firstly, we perform bitwise exclusive OR operation on the pixels of the plain image using the pseudorandom sequences produced by the spatiotemporal chaos system, i.e., CML (coupled map lattice). Secondly, a DNA matrix is obtained by encoding the confused image using a kind of DNA encoding rule. Then we generate the new initial conditions of the CML according to this DNA matrix and the previous initial conditions, which can make the encryption result closely depend on every pixel of the plain image. Thirdly, the rows and columns of the DNA matrix are permuted. Then, the permuted DNA matrix is confused once again. At last, after decoding the confused DNA matrix using a kind of DNA decoding rule, we obtain the ciphered image. Experimental results and theoretical analysis show that the scheme is able to resist various attacks, so it has extraordinarily high security.

Plenoptic mapping for imaging and retrieval of the complex field amplitude of a laser beam.

PubMed

Wu, Chensheng; Ko, Jonathan; Davis, Christopher C

2016-12-26

The plenoptic sensor has been developed to sample complicated beam distortions produced by turbulence in the low atmosphere (deep turbulence or strong turbulence) with high density data samples. In contrast with the conventional Shack-Hartmann wavefront sensor, which utilizes all the pixels under each lenslet of a micro-lens array (MLA) to obtain one data sample indicating sub-aperture phase gradient and photon intensity, the plenoptic sensor uses each illuminated pixel (with significant pixel value) under each MLA lenslet as a data point for local phase gradient and intensity. To characterize the working principle of a plenoptic sensor, we propose the concept of plenoptic mapping and its inverse mapping to describe the imaging and reconstruction process respectively. As a result, we show that the plenoptic mapping is an efficient method to image and reconstruct the complex field amplitude of an incident beam with just one image. With a proof of concept experiment, we show that adaptive optics (AO) phase correction can be instantaneously achieved without going through a phase reconstruction process under the concept of plenoptic mapping. The plenoptic mapping technology has high potential for applications in imaging, free space optical (FSO) communication and directed energy (DE) where atmospheric turbulence distortion needs to be compensated.

FDTD-based optical simulations methodology for CMOS image sensors pixels architecture and process optimization

NASA Astrophysics Data System (ADS)

Hirigoyen, Flavien; Crocherie, Axel; Vaillant, Jérôme M.; Cazaux, Yvon

2008-02-01

This paper presents a new FDTD-based optical simulation model dedicated to describe the optical performances of CMOS image sensors taking into account diffraction effects. Following market trend and industrialization constraints, CMOS image sensors must be easily embedded into even smaller packages, which are now equipped with auto-focus and short-term coming zoom system. Due to miniaturization, the ray-tracing models used to evaluate pixels optical performances are not accurate anymore to describe the light propagation inside the sensor, because of diffraction effects. Thus we adopt a more fundamental description to take into account these diffraction effects: we chose to use Maxwell-Boltzmann based modeling to compute the propagation of light, and to use a software with an FDTD-based (Finite Difference Time Domain) engine to solve this propagation. We present in this article the complete methodology of this modeling: on one hand incoherent plane waves are propagated to approximate a product-use diffuse-like source, on the other hand we use periodic conditions to limit the size of the simulated model and both memory and computation time. After having presented the correlation of the model with measurements we will illustrate its use in the case of the optimization of a 1.75μm pixel.

Tritium autoradiography with thinned and back-side illuminated monolithic active pixel sensor device

NASA Astrophysics Data System (ADS)

Deptuch, G.

2005-05-01

The first autoradiographic results of the tritium ( 3H) marked source obtained with monolithic active pixel sensors are presented. The detector is a high-resolution, back-side illuminated imager, developed within the SUCIMA collaboration for low-energy (<30 keV) electrons detection. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in the form of a standard VLSI chip, down to the thickness of the epitaxial layer. The detector used is the 1×10 6 pixel, thinned MIMOSA V chip. The low noise performance and thin (˜160 nm) entrance window provide the sensitivity of the device to energies as low as ˜4 keV. A polymer tritium source was parked directly atop the detector in open-air conditions. A real-time image of the source was obtained.

A bio-image sensor for simultaneous detection of multi-neurotransmitters.

PubMed

Lee, You-Na; Okumura, Koichi; Horio, Tomoko; Iwata, Tatsuya; Takahashi, Kazuhiro; Hattori, Toshiaki; Sawada, Kazuaki

2018-03-01

We report here a new bio-image sensor for simultaneous detection of spatial and temporal distribution of multi-neurotransmitters. It consists of multiple enzyme-immobilized membranes on a 128 × 128 pixel array with read-out circuit. Apyrase and acetylcholinesterase (AChE), as selective elements, are used to recognize adenosine 5'-triphosphate (ATP) and acetylcholine (ACh), respectively. To enhance the spatial resolution, hydrogen ion (H + ) diffusion barrier layers are deposited on top of the bio-image sensor and demonstrated their prevention capability. The results are used to design the space among enzyme-immobilized pixels and the null H + sensor to minimize the undesired signal overlap by H + diffusion. Using this bio-image sensor, we can obtain H + diffusion-independent imaging of concentration gradients of ATP and ACh in real-time. The sensing characteristics, such as sensitivity and detection of limit, are determined experimentally. With the proposed bio-image sensor the possibility exists for customizable monitoring of the activities of various neurochemicals by using different kinds of proton-consuming or generating enzymes. Copyright © 2017 Elsevier B.V. All rights reserved.

Fast and accurate computation of system matrix for area integral model-based algebraic reconstruction technique

NASA Astrophysics Data System (ADS)

Zhang, Shunli; Zhang, Dinghua; Gong, Hao; Ghasemalizadeh, Omid; Wang, Ge; Cao, Guohua

2014-11-01

Iterative algorithms, such as the algebraic reconstruction technique (ART), are popular for image reconstruction. For iterative reconstruction, the area integral model (AIM) is more accurate for better reconstruction quality than the line integral model (LIM). However, the computation of the system matrix for AIM is more complex and time-consuming than that for LIM. Here, we propose a fast and accurate method to compute the system matrix for AIM. First, we calculate the intersection of each boundary line of a narrow fan-beam with pixels in a recursive and efficient manner. Then, by grouping the beam-pixel intersection area into six types according to the slopes of the two boundary lines, we analytically compute the intersection area of the narrow fan-beam with the pixels in a simple algebraic fashion. Overall, experimental results show that our method is about three times faster than the Siddon algorithm and about two times faster than the distance-driven model (DDM) in computation of the system matrix. The reconstruction speed of our AIM-based ART is also faster than the LIM-based ART that uses the Siddon algorithm and DDM-based ART, for one iteration. The fast reconstruction speed of our method was accomplished without compromising the image quality.

A new LTPS TFT AC pixel circuit for an AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen

2013-01-01

This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode (AMOLED) display. The proposed pixel circuit consists of six low temperature polycrystalline silicon thin-film transistors (LTPS TFTs), one storage capacitor, and one OLED, and is verified by simulation work using HSPICE software. Besides effectively compensating for the threshold voltage variation of the driving TFT and OLED, the proposed pixel circuit offers an AC driving mode for the OLED, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

Increasing Linear Dynamic Range of a CMOS Image Sensor

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2007-01-01

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Scientific grade CCDs from EG & G Reticon

NASA Technical Reports Server (NTRS)

Cizdziel, Philip J.

1990-01-01

The design and performance of three scientific grade CCDs are summarized: a 1200 x 400 astronomical array of 27 x 27 sq micron pixels, a 512 x 512 scientific array of 27 x 27 sq micron pixels and a 404 x 64 VNIR array of 52 x 52 sq micron pixels. Each of the arrays is fabricated using a four phase, double poly, buried n-channel, multi-pinned phase CCD process. Performance data for each sensor is presented.

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

Progress in the Development of Mo-Au Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Stahle, Caroline K.; Brekosky, Regis P.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Gygax, John D.; Li, Mary J.; Lindeman, Mark A..; Porter, F. Scott; Tralshawalaa, Nilesh

2000-01-01

X-ray microcalorimeters using transition-edge sensors (TES) show great promise for use in astronomical x-ray spectroscopy. We have obtained very high energy resolution (2.8 electronvolts at 1.5 kiloelectronvolts and 3.7 electronvolts at 3.3 kiloelectronvolts) in a large, isolated TES pixel using a Mo/Au proximity-effect bilayer on a silicon nitride membrane. We will discuss the performance and our characterization of that device. In order to be truly suitable for use behind an x-ray telescope, however, such devices need to be arrayed with a pixel size and focal-plane coverage commensurate with the telescope focal length and spatial resolution. Since this requires fitting the TES and its thermal link, a critical component of each calorimeter pixel, into a far more compact geometry than has previously been investigated, we must study the fundamental scaling laws in pixel optimization. We have designed a photolithography mask that will allow us to probe the range in thermal conductance that can be obtained by perforating the nitride membrane in a narrow perimeter around the sensor. This mask will also show the effects of reducing the TES area. Though we have not yet tested devices of the compact designs, we will present our progress in several of the key processing steps and discuss the parameter space of our intended investigations.

Time-of-flight camera via a single-pixel correlation image sensor

NASA Astrophysics Data System (ADS)

Mao, Tianyi; Chen, Qian; He, Weiji; Dai, Huidong; Ye, Ling; Gu, Guohua

2018-04-01

A time-of-flight imager based on single-pixel correlation image sensors is proposed for noise-free depth map acquisition in presence of ambient light. Digital micro-mirror device and time-modulated IR-laser provide spatial and temporal illumination on the unknown object. Compressed sensing and ‘four bucket principle’ method are combined to reconstruct the depth map from a sequence of measurements at a low sampling rate. Second-order correlation transform is also introduced to reduce the noise from the detector itself and direct ambient light. Computer simulations are presented to validate the computational models and improvement of reconstructions.

Advances in OLED-based oxygen sensors with structurally integrated OLED, sensor film, and thin-film Si photodetector

NASA Astrophysics Data System (ADS)

Ghosh, Debju; Shinar, Ruth; Cai, Yuankun; Zhou, Zhaoqun; Dalal, Vikram L.; Shinar, Joseph

2007-09-01

Steps towards the improvement of a compact photoluminescence (PL)-based sensor array that is fully structurally integrated are described. The approach is demonstrated for oxygen sensing, which can be monitored via its effect on the PL intensity I or decay time τ of oxygen-sensitive dyes such as Pt octaethylporphryn (PtOEP) and its Pd analog (PdOEP). The integrated components include (1) an organic light emitting device (OLED) excitation source, which is an array of coumarin-doped tris(quinolinolate) Al (Alq 3) pixels, (2) the sensor film, i.e., PdOEP embedded in polystyrene, and (3) the photodetector (PD), which is a plasma-enhanced CVD-grown p-i-n or n-i-p structure, based on amorphous or nanocrystalline (Si,Ge):H. These components are fabricated on common or separate substrates that are attached back-to-back, resulting in sensors with a thickness largely determined by that of the substrates. The fully integrated oxygen sensor is demonstrated first by fabricating each of the three components on a separate substrate. The PD was placed in front of a flow cell containing the sensor film, while the OLED array was "behind" the sensor film. This design showed the expected trend in monitoring different concentration of O II via their effect on I, with improved detection sensitivity achieved by shielding the electromagnetic noise synchronous with the pulsed OLED. The detection sensitivity using the I monitoring mode is expected to further increase by reducing the OLED tail emission. The issue of the OLED background can be eliminated by monitoring the oxygen concentration via its effect on τ, where the OLED is pulsed and τ is measured while the OLED is off. Steps therefore focused also on shortening the response time of the PDs, and understanding the factors affecting their speed. Development of a sensor array, where the PD pixels are fabricated between the OLED pixels on the same side of a common substrate, is also discussed.

Estimation of proportions in mixed pixels through their region characterization

NASA Technical Reports Server (NTRS)

Chittineni, C. B. (Principal Investigator)

1981-01-01

A region of mixed pixels can be characterized through the probability density function of proportions of classes in the pixels. Using information from the spectral vectors of a given set of pixels from the mixed pixel region, expressions are developed for obtaining the maximum likelihood estimates of the parameters of probability density functions of proportions. The proportions of classes in the mixed pixels can then be estimated. If the mixed pixels contain objects of two classes, the computation can be reduced by transforming the spectral vectors using a transformation matrix that simultaneously diagonalizes the covariance matrices of the two classes. If the proportions of the classes of a set of mixed pixels from the region are given, then expressions are developed for obtaining the estmates of the parameters of the probability density function of the proportions of mixed pixels. Development of these expressions is based on the criterion of the minimum sum of squares of errors. Experimental results from the processing of remotely sensed agricultural multispectral imagery data are presented.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications. PMID:25937684

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Polarization characterization of an LCTV with a Mueller matrix imaging polarimeter

NASA Astrophysics Data System (ADS)

Pezzaniti, J. Larry; Chipman, Russell A.; Gregory, Don A.

1993-10-01

The polarization properties of a TVT-6000 LCTV have been investigated. Mueller matrices of multiple ray paths through the TVT-6000 were measured for a single (typical) pixel, and through several pixels, using an imaging polarimeter. The TVT-6000 was characterized as a function of applied voltage and angle of incidence. From the Mueller matrices, the spatially dependent retardance, diattenuation, and depolarization are calculated and displayed as topographic maps. In another set of measurements, the LCTV is illuminated with a plane wave, and the spatial distribution of polarization in the Far Field Diffraction Pattern is measured in Mueller matrix form.

Characterization of modulated time-of-flight range image sensors

NASA Astrophysics Data System (ADS)

Payne, Andrew D.; Dorrington, Adrian A.; Cree, Michael J.; Carnegie, Dale A.

2009-01-01

A number of full field image sensors have been developed that are capable of simultaneously measuring intensity and distance (range) for every pixel in a given scene using an indirect time-of-flight measurement technique. A light source is intensity modulated at a frequency between 10-100 MHz, and an image sensor is modulated at the same frequency, synchronously sampling light reflected from objects in the scene (homodyne detection). The time of flight is manifested as a phase shift in the illumination modulation envelope, which can be determined from the sampled data simultaneously for each pixel in the scene. This paper presents a method of characterizing the high frequency modulation response of these image sensors, using a pico-second laser pulser. The characterization results allow the optimal operating parameters, such as the modulation frequency, to be identified in order to maximize the range measurement precision for a given sensor. A number of potential sources of error exist when using these sensors, including deficiencies in the modulation waveform shape, duty cycle, or phase, resulting in contamination of the resultant range data. From the characterization data these parameters can be identified and compensated for by modifying the sensor hardware or through post processing of the acquired range measurements.

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array withoutmore » any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.« less

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

A FPGA-based Cluster Finder for CMOS Monolithic Active Pixel Sensors of the MIMOSA-26 Family

NASA Astrophysics Data System (ADS)

Li, Qiyan; Amar-Youcef, S.; Doering, D.; Deveaux, M.; Fröhlich, I.; Koziel, M.; Krebs, E.; Linnik, B.; Michel, J.; Milanovic, B.; Müntz, C.; Stroth, J.; Tischler, T.

2014-06-01

CMOS Monolithic Active Pixel Sensors (MAPS) demonstrated excellent performances in the field of charged particle tracking. Among their strong points are an single point resolution few μm, a light material budget of 0.05% X0 in combination with a good radiation tolerance and high rate capability. Those features make the sensors a valuable technology for vertex detectors of various experiments in heavy ion and particle physics. To reduce the load on the event builders and future mass storage systems, we have developed algorithms suited for preprocessing and reducing the data streams generated by the MAPS. This real-time processing employs remaining free resources of the FPGAs of the readout controllers of the detector and complements the on-chip data reduction circuits of the MAPS.

Adaptive time-sequential binary sensing for high dynamic range imaging

NASA Astrophysics Data System (ADS)

Hu, Chenhui; Lu, Yue M.

2012-06-01

We present a novel image sensor for high dynamic range imaging. The sensor performs an adaptive one-bit quantization at each pixel, with the pixel output switched from 0 to 1 only if the number of photons reaching that pixel is greater than or equal to a quantization threshold. With an oracle knowledge of the incident light intensity, one can pick an optimal threshold (for that light intensity) and the corresponding Fisher information contained in the output sequence follows closely that of an ideal unquantized sensor over a wide range of intensity values. This observation suggests the potential gains one may achieve by adaptively updating the quantization thresholds. As the main contribution of this work, we propose a time-sequential threshold-updating rule that asymptotically approaches the performance of the oracle scheme. With every threshold mapped to a number of ordered states, the dynamics of the proposed scheme can be modeled as a parametric Markov chain. We show that the frequencies of different thresholds converge to a steady-state distribution that is concentrated around the optimal choice. Moreover, numerical experiments show that the theoretical performance measures (Fisher information and Craḿer-Rao bounds) can be achieved by a maximum likelihood estimator, which is guaranteed to find globally optimal solution due to the concavity of the log-likelihood functions. Compared with conventional image sensors and the strategy that utilizes a constant single-photon threshold considered in previous work, the proposed scheme attains orders of magnitude improvement in terms of sensor dynamic ranges.

The Simbol-X Low Energy Detector

NASA Astrophysics Data System (ADS)

Lechner, Peter

2009-05-01

For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

Fast Readout Architectures for Large Arrays of Digital Pixels: Examples and Applications

PubMed Central

Gabrielli, A.

2014-01-01

Modern pixel detectors, particularly those designed and constructed for applications and experiments for high-energy physics, are commonly built implementing general readout architectures, not specifically optimized in terms of speed. High-energy physics experiments use bidimensional matrices of sensitive elements located on a silicon die. Sensors are read out via other integrated circuits bump bonded over the sensor dies. The speed of the readout electronics can significantly increase the overall performance of the system, and so here novel forms of readout architectures are studied and described. These circuits have been investigated in terms of speed and are particularly suited for large monolithic, low-pitch pixel detectors. The idea is to have a small simple structure that may be expanded to fit large matrices without affecting the layout complexity of the chip, while maintaining a reasonably high readout speed. The solutions might be applied to devices for applications not only in physics but also to general-purpose pixel detectors whenever online fast data sparsification is required. The paper presents also simulations on the efficiencies of the systems as proof of concept for the proposed ideas. PMID:24778588

Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers

NASA Astrophysics Data System (ADS)

Cheng, Mao-Hsun; Zhao, Chumin; Kanicki, Jerzy

2017-05-01

Current-mode active pixel sensor (C-APS) circuits based on amorphous indium-tin-zinc-oxide thin-film transistors (a-ITZO TFTs) are proposed for indirect X-ray imagers. The proposed C-APS circuits include a combination of a hydrogenated amorphous silicon (a-Si:H) p+-i-n+ photodiode (PD) and a-ITZO TFTs. Source-output (SO) and drain-output (DO) C-APS are investigated and compared. Acceptable signal linearity and high gains are realized for SO C-APS. APS circuit characteristics including voltage gain, charge gain, signal linearity, charge-to-current conversion gain, electron-to-voltage conversion gain are evaluated. The impact of the a-ITZO TFT threshold voltage shifts on C-APS is also considered. A layout for a pixel pitch of 50 μm and an associated fabrication process are suggested. Data line loadings for 4k-resolution X-ray imagers are computed and their impact on circuit performances is taken into consideration. Noise analysis is performed, showing a total input-referred noise of 239 e-.

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

NASA Astrophysics Data System (ADS)

Hiti, B.; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

2017-10-01

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1× 1016 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5× 1014 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.

Modeling radiation damage to pixel sensors in the ATLAS detector

NASA Astrophysics Data System (ADS)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

NASA Astrophysics Data System (ADS)

Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

2002-02-01

We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

True Ortho Generation of Urban Area Using High Resolution Aerial Photos

NASA Astrophysics Data System (ADS)

Hu, Yong; Stanley, David; Xin, Yubin

2016-06-01

The pros and cons of existing methods for true ortho generation are analyzed based on a critical literature review for its two major processing stages: visibility analysis and occlusion compensation. They process frame and pushbroom images using different algorithms for visibility analysis due to the need of perspective centers used by the z-buffer (or alike) techniques. For occlusion compensation, the pixel-based approach likely results in excessive seamlines in the ortho-rectified images due to the use of a quality measure on the pixel-by-pixel rating basis. In this paper, we proposed innovative solutions to tackle the aforementioned problems. For visibility analysis, an elevation buffer technique is introduced to employ the plain elevations instead of the distances from perspective centers by z-buffer, and has the advantage of sensor independency. A segment oriented strategy is developed to evaluate a plain cost measure per segment for occlusion compensation instead of the tedious quality rating per pixel. The cost measure directly evaluates the imaging geometry characteristics in ground space, and is also sensor independent. Experimental results are demonstrated using aerial photos acquired by UltraCam camera.

DEPFET pixel detector for future e-e+ experiments

NASA Astrophysics Data System (ADS)

Boronat, M.; DEPFET Collaboration

2016-04-01

The DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstanding vertex reconstruction at future e+e- collider experiments. A DEPFET sensor provides, simultaneously, position sensitive detector capabilities and in-pixel amplification by the integration of a field effect transistor on a fully depleted silicon bulk. The characterization of the latest DEPFET prototypes has proven that a comfortable signal to noise ratio and excellent single point resolution can be achieved for a sensor thickness of 50 μm. A complete detector concept is being developed for the Belle II experiment at the new Japanese super flavor factory. The close to Belle related final auxiliary ASICs have been produced and found to operate a DEPFET pixel detector of the latest generation with the Belle II required read-out speed. DEPFET is not only the technology of choice for the Belle II vertex detector, but also a solid candidate for the International Linear Collider (ILC). Therefore, in this paper, the status of DEPFET R&D project is reviewed in the light of the requirements of the vertex detector at a future e+e- collider.

Transition-Edge Sensor Pixel Parameter Design of the Microcalorimeter Array for the X-Ray Integral Field Unit on Athena

NASA Technical Reports Server (NTRS)

Smith, S. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.;

Wavelength scanning achieves pixel super-resolution in holographic on-chip microscopy

NASA Astrophysics Data System (ADS)

Luo, Wei; Göröcs, Zoltan; Zhang, Yibo; Feizi, Alborz; Greenbaum, Alon; Ozcan, Aydogan

2016-03-01

Lensfree holographic on-chip imaging is a potent solution for high-resolution and field-portable bright-field imaging over a wide field-of-view. Previous lensfree imaging approaches utilize a pixel super-resolution technique, which relies on sub-pixel lateral displacements between the lensfree diffraction patterns and the image sensor's pixel-array, to achieve sub-micron resolution under unit magnification using state-of-the-art CMOS imager chips, commonly used in e.g., mobile-phones. Here we report, for the first time, a wavelength scanning based pixel super-resolution technique in lensfree holographic imaging. We developed an iterative super-resolution algorithm, which generates high-resolution reconstructions of the specimen from low-resolution (i.e., under-sampled) diffraction patterns recorded at multiple wavelengths within a narrow spectral range (e.g., 10-30 nm). Compared with lateral shift-based pixel super-resolution, this wavelength scanning approach does not require any physical shifts in the imaging setup, and the resolution improvement is uniform in all directions across the sensor-array. Our wavelength scanning super-resolution approach can also be integrated with multi-height and/or multi-angle on-chip imaging techniques to obtain even higher resolution reconstructions. For example, using wavelength scanning together with multi-angle illumination, we achieved a halfpitch resolution of 250 nm, corresponding to a numerical aperture of 1. In addition to pixel super-resolution, the small scanning steps in wavelength also enable us to robustly unwrap phase, revealing the specimen's optical path length in our reconstructed images. We believe that this new wavelength scanning based pixel super-resolution approach can provide competitive microscopy solutions for high-resolution and field-portable imaging needs, potentially impacting tele-pathology applications in resource-limited-settings.

3D Spatial and Spectral Fusion of Terrestrial Hyperspectral Imagery and Lidar for Hyperspectral Image Shadow Restoration Applied to a Geologic Outcrop

NASA Astrophysics Data System (ADS)

Hartzell, P. J.; Glennie, C. L.; Hauser, D. L.; Okyay, U.; Khan, S.; Finnegan, D. C.

2016-12-01

Recent advances in remote sensing technology have expanded the acquisition and fusion of active lidar and passive hyperspectral imagery (HSI) from an exclusively airborne technique to terrestrial modalities. This enables high resolution 3D spatial and spectral quantification of vertical geologic structures for applications such as virtual 3D rock outcrop models for hydrocarbon reservoir analog analysis and mineral quantification in open pit mining environments. In contrast to airborne observation geometry, the vertical surfaces observed by horizontal-viewing terrestrial HSI sensors are prone to extensive topography-induced solar shadowing, which leads to reduced pixel classification accuracy or outright removal of shadowed pixels from analysis tasks. Using a precisely calibrated and registered offset cylindrical linear array camera model, we demonstrate the use of 3D lidar data for sub-pixel HSI shadow detection and the restoration of the shadowed pixel spectra via empirical methods that utilize illuminated and shadowed pixels of similar material composition. We further introduce a new HSI shadow restoration technique that leverages collocated backscattered lidar intensity, which is resistant to solar conditions, obtained by projecting the 3D lidar points through the HSI camera model into HSI pixel space. Using ratios derived from the overlapping lidar laser and HSI wavelengths, restored shadow pixel spectra are approximated using a simple scale factor. Simulations of multiple lidar wavelengths, i.e., multi-spectral lidar, indicate the potential for robust HSI spectral restoration that is independent of the complexity and costs associated with rigorous radiometric transfer models, which have yet to be developed for horizontal-viewing terrestrial HSI sensors. The spectral restoration performance is quantified through HSI pixel classification consistency between full sun and partial sun exposures of a single geologic outcrop.

Transition-edge sensor pixel parameter design of the microcalorimeter array for the x-ray integral field unit on Athena

NASA Astrophysics Data System (ADS)

Smith, S. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Miniussi, A. R.; Porter, F. S.; Sadleir, J. E.; Sakai, K.; Wakeham, N. A.; Wassell, E. J.; Yoon, W.; Bennett, D. A.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Morgan, K. M.; Pappas, C. G.; Reintsema, C. N.; Swetz, D. S.; Ullom, J. N.; Irwin, K. D.; Akamatsu, H.; Gottardi, L.; den Hartog, R.; Jackson, B. D.; van der Kuur, J.; Barret, D.; Peille, P.

2016-07-01

The focal plane of the X-ray integral field unit (X-IFU) for ESA's Athena X-ray observatory will consist of 4000 transition edge sensor (TES) x-ray microcalorimeters optimized for the energy range of 0.2 to 12 keV. The instrument will provide unprecedented spectral resolution of 2.5 eV at energies of up to 7 keV and will accommodate photon fluxes of 1 mCrab (90 cps) for point source observations. The baseline configuration is a uniform large pixel array (LPA) of 4.28" pixels that is read out using frequency domain multiplexing (FDM). However, an alternative configuration under study incorporates an 18 × 18 small pixel array (SPA) of 2" pixels in the central 36" region. This hybrid array configuration could be designed to accommodate higher fluxes of up to 10 mCrab (900 cps) or alternately for improved spectral performance (< 1.5 eV) at low count-rates. In this paper we report on the TES pixel designs that are being optimized to meet these proposed LPA and SPA configurations. In particular we describe details of how important TES parameters are chosen to meet the specific mission criteria such as energy resolution, count-rate and quantum efficiency, and highlight performance trade-offs between designs. The basis of the pixel parameter selection is discussed in the context of existing TES arrays that are being developed for solar and x-ray astronomy applications. We describe the latest results on DC biased diagnostic arrays as well as large format kilo-pixel arrays and discuss the technical challenges associated with integrating different array types on to a single detector die.

Invalid-point removal based on epipolar constraint in the structured-light method

NASA Astrophysics Data System (ADS)

Qi, Zhaoshuai; Wang, Zhao; Huang, Junhui; Xing, Chao; Gao, Jianmin

2018-06-01

In structured-light measurement, there unavoidably exist many invalid points caused by shadows, image noise and ambient light. According to the property of the epipolar constraint, because the retrieved phase of the invalid point is inaccurate, the corresponding projector image coordinate (PIC) will not satisfy the epipolar constraint. Based on this fact, a new invalid-point removal method based on the epipolar constraint is proposed in this paper. First, the fundamental matrix of the measurement system is calculated, which will be used for calculating the epipolar line. Then, according to the retrieved phase map of the captured fringes, the PICs of each pixel are retrieved. Subsequently, the epipolar line in the projector image plane of each pixel is obtained using the fundamental matrix. The distance between the corresponding PIC and the epipolar line of a pixel is defined as the invalidation criterion, which quantifies the satisfaction degree of the epipolar constraint. Finally, all pixels with a distance larger than a certain threshold are removed as invalid points. Experiments verified that the method is easy to implement and demonstrates better performance than state-of-the-art measurement systems.

PFM2: a 32 × 32 processor for X-ray diffraction imaging at FELs

NASA Astrophysics Data System (ADS)

Manghisoni, M.; Fabris, L.; Re, V.; Traversi, G.; Ratti, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Vacchi, C.; Pancheri, L.; Benkechcache, M. E. A.; Dalla Betta, G.-F.; Xu, H.; Verzellesi, G.; Ronchin, S.; Boscardin, M.; Batignani, G.; Bettarini, S.; Casarosa, G.; Forti, F.; Giorgi, M.; Paladino, A.; Paoloni, E.; Rizzo, G.; Morsani, F.

2016-11-01

This work is concerned with the design of a readout chip for application to experiments at the next generation X-ray Free Electron Lasers (FEL). The ASIC, named PixFEL Matrix (PFM2), has been designed in a 65 nm CMOS technology and consists of 32 × 32 pixels. Each cell covers an area of 110 × 110 μm2 and includes a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, a time-variant shaper used to process the preamplifier output signal, a 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) and digital circuitry for channel control and data readout. Two different solutions for the readout channel, based on different versions of the time-variant filter, have been integrated in the chip. Both solutions can be operated in such a way to cope with the high frame rate (exceeding 1 MHz) foreseen for future X-ray FEL machines. The ASIC will be bump bonded to a slim/active edge pixel sensor to form the first demonstrator for the PixFEL X-ray imager. This work has been carried out in the frame of the PixFEL project funded by Istituto Nazionale di Fisica Nucleare (INFN), Italy.

The Dram As An X-Ray Sensor

NASA Astrophysics Data System (ADS)

Jacobs, Alan M.; Cox, John D.; Juang, Yi-Shung

1987-01-01

A solid-state digital x-ray detector is described which can replace high resolution film in industrial radiography and has potential for application in some medical imaging. Because of the 10 micron pixel pitch on the sensor, contact magnification radiology is possible and is demonstrated. Methods for frame speed increase and integration of sensor to a large format are discussed.

Performance benefits and limitations of a camera network

NASA Astrophysics Data System (ADS)

Carr, Peter; Thomas, Paul J.; Hornsey, Richard

2005-06-01

Visual information is of vital significance to both animals and artificial systems. The majority of mammals rely on two images, each with a resolution of 107-108 'pixels' per image. At the other extreme are insect eyes where the field of view is segmented into 103-105 images, each comprising effectively one pixel/image. The great majority of artificial imaging systems lie nearer to the mammalian characteristics in this parameter space, although electronic compound eyes have been developed in this laboratory and elsewhere. If the definition of a vision system is expanded to include networks or swarms of sensor elements, then schools of fish, flocks of birds and ant or termite colonies occupy a region where the number of images and the pixels/image may be comparable. A useful system might then have 105 imagers, each with about 104-105 pixels. Artificial analogs to these situations include sensor webs, smart dust and co-ordinated robot clusters. As an extreme example, we might consider the collective vision system represented by the imminent existence of ~109 cellular telephones, each with a one-megapixel camera. Unoccupied regions in this resolution-segmentation parameter space suggest opportunities for innovative artificial sensor network systems. Essential for the full exploitation of these opportunities is the availability of custom CMOS image sensor chips whose characteristics can be tailored to the application. Key attributes of such a chip set might include integrated image processing and control, low cost, and low power. This paper compares selected experimentally determined system specifications for an inward-looking array of 12 cameras with the aid of a camera-network model developed to explore the tradeoff between camera resolution and the number of cameras.

Spectral response characterization of CdTe sensors of different pixel size with the IBEX ASIC

NASA Astrophysics Data System (ADS)

Zambon, P.; Radicci, V.; Trueb, P.; Disch, C.; Rissi, M.; Sakhelashvili, T.; Schneebeli, M.; Broennimann, C.

2018-06-01

We characterized the spectral response of CdTe sensors with different pixel sizes - namely 75, 150 and 300 μm - bonded to the latest generation IBEX single photon counting ASIC developed at DECTRIS, to detect monochromatic X-ray energy in the range 10-60 keV. We present a comparison of pulse height spectra recorded for several energies, showing the dependence on the pixel size of the non-trivial atomic fluorescence and charge sharing effects that affect the detector response. The extracted energy resolution, in terms of full width at half maximum or FWHM, ranges from 1.5 to 4 keV according to the pixel size and chip configuration. We devoted a careful analysis to the Quantum Efficiency and to the Spectral Efficiency - a newly-introduced measure that quantifies the impact of fluorescence and escape phenomena on the spectrum integrity in high- Z material based detectors. We then investigated the influence of the photon flux on the aforementioned quantities up to 180 ṡ 106 cts/s/mm2 and 50 ṡ 106 cts/s/mm2 for the 150 μm and 300 μm pixel case, respectively. Finally, we complemented the experimental data with analytical and with Monte Carlo simulations - taking into account the stochastic nature of atomic fluorescence - with an excellent agreement.

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout †

PubMed Central

Ni, Yang

2018-01-01

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout. PMID:29443903

QLog Solar-Cell Mode Photodiode Logarithmic CMOS Pixel Using Charge Compression and Readout.

PubMed

Ni, Yang

2018-02-14

In this paper, we present a new logarithmic pixel design currently under development at New Imaging Technologies SA (NIT). This new logarithmic pixel design uses charge domain logarithmic signal compression and charge-transfer-based signal readout. This structure gives a linear response in low light conditions and logarithmic response in high light conditions. The charge transfer readout efficiently suppresses the reset (KTC) noise by using true correlated double sampling (CDS) in low light conditions. In high light conditions, thanks to charge domain logarithmic compression, it has been demonstrated that 3000 electrons should be enough to cover a 120 dB dynamic range with a mobile phone camera-like signal-to-noise ratio (SNR) over the whole dynamic range. This low electron count permits the use of ultra-small floating diffusion capacitance (sub-fF) without charge overflow. The resulting large conversion gain permits a single photon detection capability with a wide dynamic range without a complex sensor/system design. A first prototype sensor with 320 × 240 pixels has been implemented to validate this charge domain logarithmic pixel concept and modeling. The first experimental results validate the logarithmic charge compression theory and the low readout noise due to the charge-transfer-based readout.

An EUDET/AIDA Pixel Beam Telescope for Detector Development

NASA Astrophysics Data System (ADS)

Rubinskiy, I.; EUDET Consortium; AIDA Consortium

Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology.

PubMed

Sekine, Hiroshi; Kobayashi, Masahiro; Onuki, Yusuke; Kawabata, Kazunari; Tsuboi, Toshiki; Matsuno, Yasushi; Takahashi, Hidekazu; Inoue, Shunsuke; Ichikawa, Takeshi

2017-12-09

CMOS image sensors (CISs) with global shutter (GS) function are strongly required in order to avoid image degradation. However, CISs with GS function have generally been inferior to the rolling shutter (RS) CIS in performance, because they have more components. This problem is remarkable in small pixel pitch. The newly developed 3.4 µm pitch GS CIS solves this problem by using multiple accumulation shutter technology and the gentle slope light guide structure. As a result, the developed GS pixel achieves 1.8 e - temporal noise and 16,200 e - full well capacity with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e - /lx·s and -89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity are improved by the gentle slope light guide structure.

Module and electronics developments for the ATLAS ITk pixel system

NASA Astrophysics Data System (ADS)

Muñoz, F. J.

2018-03-01

The ATLAS experiment is preparing for an extensive modification of its detectors in the course of the planned HL-LHC accelerator upgrade around 2025. The ATLAS upgrade includes the replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will be a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in 2018. In this paper an overview of the ongoing R&D activities on modules and electronics for the ATLAS ITk is given including the main developments and achievements in silicon planar and 3D sensor technologies, readout and power challenges.

Integration of nanostructured planar diffractive lenses dedicated to near infrared detection for CMOS image sensors.

PubMed

Lopez, Thomas; Massenot, Sébastien; Estribeau, Magali; Magnan, Pierre; Pardo, Fabrice; Pelouard, Jean-Luc

2016-04-18

This paper deals with the integration of metallic and dielectric nanostructured planar lenses into a pixel from a silicon based CMOS image sensor, for a monochromatic application at 1.064 μm. The first is a Plasmonic Lens, based on the phase delay through nanoslits, which has been found to be hardly compatible with current CMOS technology and exhibits a notable metallic absorption. The second is a dielectric Phase-Fresnel Lens integrated at the top of a pixel, it exhibits an Optical Efficiency (OE) improved by a few percent and an angle of view of 50°. The third one is a metallic diffractive lens integrated inside a pixel, which shows a better OE and an angle of view of 24°. The last two lenses exhibit a compatibility with a spectral band close to 1.064 μm.

Reduced-Scale Transition-Edge Sensor Detectors for Solar and X-Ray Astrophysics

NASA Technical Reports Server (NTRS)

Datesman, Aaron M.; Adams, Joseph S.; Bandler, Simon R.; Betancourt-Martinez, Gabriele L.; Chang, Meng-Ping; Chervenak, James A.; Eckart, Megan E.; Ewin, Audrey E.; Finkbeiner, Fred M.; Ha, Jong Yoon;

Hyperspectral image classification by a variable interval spectral average and spectral curve matching combined algorithm

NASA Astrophysics Data System (ADS)

Senthil Kumar, A.; Keerthi, V.; Manjunath, A. S.; Werff, Harald van der; Meer, Freek van der

2010-08-01

Classification of hyperspectral images has been receiving considerable attention with many new applications reported from commercial and military sectors. Hyperspectral images are composed of a large number of spectral channels, and have the potential to deliver a great deal of information about a remotely sensed scene. However, in addition to high dimensionality, hyperspectral image classification is compounded with a coarse ground pixel size of the sensor for want of adequate sensor signal to noise ratio within a fine spectral passband. This makes multiple ground features jointly occupying a single pixel. Spectral mixture analysis typically begins with pixel classification with spectral matching techniques, followed by the use of spectral unmixing algorithms for estimating endmembers abundance values in the pixel. The spectral matching techniques are analogous to supervised pattern recognition approaches, and try to estimate some similarity between spectral signatures of the pixel and reference target. In this paper, we propose a spectral matching approach by combining two schemes—variable interval spectral average (VISA) method and spectral curve matching (SCM) method. The VISA method helps to detect transient spectral features at different scales of spectral windows, while the SCM method finds a match between these features of the pixel and one of library spectra by least square fitting. Here we also compare the performance of the combined algorithm with other spectral matching techniques using a simulated and the AVIRIS hyperspectral data sets. Our results indicate that the proposed combination technique exhibits a stronger performance over the other methods in the classification of both the pure and mixed class pixels simultaneously.

Low-voltage 96 dB snapshot CMOS image sensor with 4.5 nW power dissipation per pixel.

PubMed

Spivak, Arthur; Teman, Adam; Belenky, Alexander; Yadid-Pecht, Orly; Fish, Alexander

2012-01-01

Modern "smart" CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage "smart" image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel

PubMed Central

Spivak, Arthur; Teman, Adam; Belenky, Alexander; Yadid-Pecht, Orly; Fish, Alexander

2012-01-01

Modern “smart” CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage “smart” image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel. PMID:23112588

Influence of the Laser Spot Size, Focal Beam Profile, and Tissue Type on the Lipid Signals Obtained by MALDI-MS Imaging in Oversampling Mode

NASA Astrophysics Data System (ADS)

Wiegelmann, Marcel; Dreisewerd, Klaus; Soltwisch, Jens

2016-12-01

To improve the lateral resolution in matrix-assisted laser desorption/ionization mass spectrometry imaging (MALDI-MSI) beyond the dimensions of the focal laser spot oversampling techniques are employed. However, few data are available on the effect of the laser spot size and its focal beam profile on the ion signals recorded in oversampling mode. To investigate these dependencies, we produced 2 times six spots with dimensions between 30 and 200 μm. By optional use of a fundamental beam shaper, square flat-top and Gaussian beam profiles were compared. MALDI-MSI data were collected using a fixed pixel size of 20 μm and both pixel-by-pixel and continuous raster oversampling modes on a QSTAR mass spectrometer. Coronal mouse brain sections coated with 2,5-dihydroxybenzoic acid matrix were used as primary test systems. Sizably higher phospholipid ion signals were produced with laser spots exceeding a dimension of 100 μm, although the same amount of material was essentially ablated from the 20 μm-wide oversampling pixel at all spot size settings. Only on white matter areas of the brain these effects were less apparent to absent. Scanning electron microscopy images showed that these findings can presumably be attributed to different matrix morphologies depending on tissue type. We propose that a transition in the material ejection mechanisms from a molecular desorption at large to ablation at smaller spot sizes and a concomitant reduction in ion yields may be responsible for the observed spot size effects. The combined results indicate a complex interplay between tissue type, matrix crystallization, and laser-derived desorption/ablation and finally analyte ionization.

Influence of the Laser Spot Size, Focal Beam Profile, and Tissue Type on the Lipid Signals Obtained by MALDI-MS Imaging in Oversampling Mode.

PubMed

Wiegelmann, Marcel; Dreisewerd, Klaus; Soltwisch, Jens

2016-12-01

To improve the lateral resolution in matrix-assisted laser desorption/ionization mass spectrometry imaging (MALDI-MSI) beyond the dimensions of the focal laser spot oversampling techniques are employed. However, few data are available on the effect of the laser spot size and its focal beam profile on the ion signals recorded in oversampling mode. To investigate these dependencies, we produced 2 times six spots with dimensions between ~30 and 200 μm. By optional use of a fundamental beam shaper, square flat-top and Gaussian beam profiles were compared. MALDI-MSI data were collected using a fixed pixel size of 20 μm and both pixel-by-pixel and continuous raster oversampling modes on a QSTAR mass spectrometer. Coronal mouse brain sections coated with 2,5-dihydroxybenzoic acid matrix were used as primary test systems. Sizably higher phospholipid ion signals were produced with laser spots exceeding a dimension of ~100 μm, although the same amount of material was essentially ablated from the 20 μm-wide oversampling pixel at all spot size settings. Only on white matter areas of the brain these effects were less apparent to absent. Scanning electron microscopy images showed that these findings can presumably be attributed to different matrix morphologies depending on tissue type. We propose that a transition in the material ejection mechanisms from a molecular desorption at large to ablation at smaller spot sizes and a concomitant reduction in ion yields may be responsible for the observed spot size effects. The combined results indicate a complex interplay between tissue type, matrix crystallization, and laser-derived desorption/ablation and finally analyte ionization. Graphical Abstract ᅟ.

New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Sang-Geun; Jeon, Jae-Hong; Goh, Joon-chul; Huh, Jong-moo; Choi, Joonhoo; Chung, Kyuha; Han, Min-Koo

2007-03-01

We propose and fabricate a new hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel employing a fraction time annealing (FTA), which can supply a negative gate bias during a fraction time of each frame rather than the entire whole frame, in order to improve the organic light emitting diode (OLED) current stability for an active matrix (AM) OLED. When an electrical bias for an initial reference current of 2 μA at 60 °C is applied to an FTA-driven pixel more than 100 h and the temperature is increased up to 60 °C rather than room temperature, the OLED current is reduced by 22% in the FTA-driven pixel, whereas it is reduced by 53% in a conventional pixel. The current stability of the proposed pixel is improved, because the applied negative bias can suppress the threshold voltage degradation of the a-Si:H TFT itself, which may be attributed to hole trapping into SiNx. The proposed fraction time annealing method can successfully suppress Vth shift of the a-Si:H TFT itself due to hole trapping into SiNx induced by negative gate bias annealing.

Health monitoring method for composite materials

DOEpatents

Watkins, Jr., Kenneth S.; Morris, Shelby J [Hampton, VA

2011-04-12

An in-situ method for monitoring the health of a composite component utilizes a condition sensor made of electrically conductive particles dispersed in a polymeric matrix. The sensor is bonded or otherwise formed on the matrix surface of the composite material. Age-related shrinkage of the sensor matrix results in a decrease in the resistivity of the condition sensor. Correlation of measured sensor resistivity with data from aged specimens allows indirect determination of mechanical damage and remaining age of the composite component.

Small Pixel Hybrid CMOS X-ray Detectors

NASA Astrophysics Data System (ADS)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Yi-Yan Lin,; Jyu-Yu Chang,; Bo-Jhang Sun,; Yan-Wei Liu,

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (Δ VTH = ± 0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Chang, Jyu-Yu; Sun, Bo-Jhang; Liu, Yan-Wei

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (ΔVTH = ±0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

Report on recent results of the PERCIVAL soft X-ray imager

NASA Astrophysics Data System (ADS)

Khromova, A.; Cautero, G.; Giuressi, D.; Menk, R.; Pinaroli, G.; Stebel, L.; Correa, J.; Marras, A.; Wunderer, C. B.; Lange, S.; Tennert, M.; Niemann, M.; Hirsemann, H.; Smoljanin, S.; Reza, S.; Graafsma, H.; Göttlicher, P.; Shevyakov, I.; Supra, J.; Xia, Q.; Zimmer, M.; Guerrini, N.; Marsh, B.; Sedgwick, I.; Nicholls, T.; Turchetta, R.; Pedersen, U.; Tartoni, N.; Hyun, H. J.; Kim, K. S.; Rah, S. Y.; Hoenk, M. E.; Jewell, A. D.; Jones, T. J.; Nikzad, S.

2016-11-01

The PERCIVAL (Pixelated Energy Resolving CMOS Imager, Versatile And Large) soft X-ray 2D imaging detector is based on stitched, wafer-scale sensors possessing a thick epi-layer, which together with back-thinning and back-side illumination yields elevated quantum efficiency in the photon energy range of 125-1000 eV. Main application fields of PERCIVAL are foreseen in photon science with FELs and synchrotron radiation. This requires high dynamic range up to 105 ph @ 250 eV paired with single photon sensitivity with high confidence at moderate frame rates in the range of 10-120 Hz. These figures imply the availability of dynamic gain switching on a pixel-by-pixel basis and a highly parallel, low noise analog and digital readout, which has been realized in the PERCIVAL sensor layout. Different aspects of the detector performance have been assessed using prototype sensors with different pixel and ADC types. This work will report on the recent test results performed on the newest chip prototypes with the improved pixel and ADC architecture. For the target frame rates in the 10-120 Hz range an average noise floor of 14e- has been determined, indicating the ability of detecting single photons with energies above 250 eV. Owing to the successfully implemented adaptive 3-stage multiple-gain switching, the integrated charge level exceeds 4 · 106 e- or 57000 X-ray photons at 250 eV per frame at 120 Hz. For all gains the noise level remains below the Poisson limit also in high-flux conditions. Additionally, a short overview over the updates on an oncoming 2 Mpixel (P2M) detector system (expected at the end of 2016) will be reported.

Experience from the construction and operation of the STAR PXL detector

NASA Astrophysics Data System (ADS)

Greiner, L.; Anderssen, E. C.; Contin, G.; Schambach, J.; Silber, J.; Stezelberger, T.; Sun, X.; Szelezniak, M.; Vu, C.; Wieman, H. H.; Woodmansee, S.

2015-04-01

A new silicon based vertex detector called the Heavy Flavor Tracker (HFT) was installed at the Soleniodal Tracker At RHIC (STAR) experiment for the Relativistic Heavy Ion Collider (RHIC) 2014 heavy ion run to improve the vertex resolution and extend the measurement capabilities of STAR in the heavy flavor domain. The HFT consists of four concentric cylinders around the STAR interaction point composed of three different silicon detector technologies based on strips, pads and for the first time in an accelerator experiment CMOS monolithic active pixels (MAPS) . The two innermost layers at a radius of 2.8 cm and 8 cm from the beam line are constructed with 400 high resolution MAPS sensors arranged in 10-sensor ladders mounted on 10 thin carbon fiber sectors giving a total silicon area of 0.16 m2. Each sensor consists of a pixel array of nearly 1 million pixels with a pitch of 20.7 μm with column-level discriminators, zero-suppression circuitry and output buffer memory integrated into one silicon die with a sensitive area of ~ 3.8 cm2. The pixel (PXL) detector has a low power dissipation of 170 mW/cm2, which allows air cooling. This results in a global material budget of 0.5% radiation length per layer for detector used in this run. A novel mechanical approach to detector insertion allows for the installation and integration of the pixel sub detector within a 12 hour period during an on-going STAR run. The detector specifications, experience from the construction and operation, lessons learned and initial measurements of the PXL performance in the 200 GeV Au-Au run will be presented.

Study of run time errors of the ATLAS pixel detector in the 2012 data taking period

NASA Astrophysics Data System (ADS)

Gandrajula, Reddy Pratap

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don't send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jose, J. M.; Čermák, P.; Fajt, L.

The SPT collaboration has been investigating the applicability of pixel detectors in the detection of two neutrino double electron capture (2νEC/EC) in{sup 106}Cd. The collaboration has proposed a Silicon Pixel Telescope (SPT) where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. The Pixel detector gives spatial information along with energy of the particle, thus helps to identify and remove the background signals. Four units of SPT prototype (using 0.5 and 1 mm Si sensors) were fabricated and installed in the LSM underground laboratory, France. Recent progress in the SPT experiment and preliminarymore » results from background measurements are presented.« less

Beam test results of the BTeV silicon pixel detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gabriele Chiodini et al.

2000-09-28

The authors have described the results of the BTeV silicon pixel detector beam test. The pixel detectors under test used samples of the first two generations of Fermilab pixel readout chips, FPIX0 and FPIX1, (indium bump-bonded to ATLAS sensor prototypes). The spatial resolution achieved using analog charge information is excellent for a large range of track inclination. The resolution is still very good using only 2-bit charge information. A relatively small dependence of the resolution on bias voltage is observed. The resolution is observed to depend dramatically on the discriminator threshold, and it deteriorates rapidly for threshold above 4000e{sup {minus}}.

Nonlinear time dependence of dark current in charge-coupled devices

NASA Astrophysics Data System (ADS)

Dunlap, Justin C.; Bodegom, Erik; Widenhorn, Ralf

2011-03-01

It is generally assumed that charge-coupled device (CCD) imagers produce a linear response of dark current versus exposure time except near saturation. We found a large number of pixels with nonlinear dark current response to exposure time to be present in two scientific CCD imagers. These pixels are found to exhibit distinguishable behavior with other analogous pixels and therefore can be characterized in groupings. Data from two Kodak CCD sensors are presented for exposure times from a few seconds up to two hours. Linear behavior is traditionally taken for granted when carrying out dark current correction and as a result, pixels with nonlinear behavior will be corrected inaccurately.

A new AC driving circuit for a top emission AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen; Haohan, Liu

2013-05-01

A new voltage programmed pixel circuit with top emission design for active-matrix organic light-emitting diode (AMOLED) displays is presented and verified by HSPICE simulations. The proposed pixel circuit consists of five poly-Si TFTs, and can effectively compensate for the threshold voltage variation of the driving TFT. Meanwhile, the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

Classification of Hyperspectral or Trichromatic Measurements of Ocean Color Data into Spectral Classes.

PubMed

Prasad, Dilip K; Agarwal, Krishna

2016-03-22

We propose a method for classifying radiometric oceanic color data measured by hyperspectral satellite sensors into known spectral classes, irrespective of the downwelling irradiance of the particular day, i.e., the illumination conditions. The focus is not on retrieving the inherent optical properties but to classify the pixels according to the known spectral classes of the reflectances from the ocean. The method compensates for the unknown downwelling irradiance by white balancing the radiometric data at the ocean pixels using the radiometric data of bright pixels (typically from clouds). The white-balanced data is compared with the entries in a pre-calibrated lookup table in which each entry represents the spectral properties of one class. The proposed approach is tested on two datasets of in situ measurements and 26 different daylight illumination spectra for medium resolution imaging spectrometer (MERIS), moderate-resolution imaging spectroradiometer (MODIS), sea-viewing wide field-of-view sensor (SeaWiFS), coastal zone color scanner (CZCS), ocean and land colour instrument (OLCI), and visible infrared imaging radiometer suite (VIIRS) sensors. Results are also shown for CIMEL's SeaPRISM sun photometer sensor used on-board field trips. Accuracy of more than 92% is observed on the validation dataset and more than 86% is observed on the other dataset for all satellite sensors. The potential of applying the algorithms to non-satellite and non-multi-spectral sensors mountable on airborne systems is demonstrated by showing classification results for two consumer cameras. Classification on actual MERIS data is also shown. Additional results comparing the spectra of remote sensing reflectance with level 2 MERIS data and chlorophyll concentration estimates of the data are included.

Demonstration of the CDMA-mode CAOS smart camera.

PubMed

Riza, Nabeel A; Mazhar, Mohsin A

2017-12-11

Demonstrated is the code division multiple access (CDMA)-mode coded access optical sensor (CAOS) smart camera suited for bright target scenarios. Deploying a silicon CMOS sensor and a silicon point detector within a digital micro-mirror device (DMD)-based spatially isolating hybrid camera design, this smart imager first engages the DMD starring mode with a controlled factor of 200 high optical attenuation of the scene irradiance to provide a classic unsaturated CMOS sensor-based image for target intelligence gathering. Next, this CMOS sensor provided image data is used to acquire a focused zone more robust un-attenuated true target image using the time-modulated CDMA-mode of the CAOS camera. Using four different bright light test target scenes, successfully demonstrated is a proof-of-concept visible band CAOS smart camera operating in the CDMA-mode using up-to 4096 bits length Walsh design CAOS pixel codes with a maximum 10 KHz code bit rate giving a 0.4096 seconds CAOS frame acquisition time. A 16-bit analog-to-digital converter (ADC) with time domain correlation digital signal processing (DSP) generates the CDMA-mode images with a 3600 CAOS pixel count and a best spatial resolution of one micro-mirror square pixel size of 13.68 μm side. The CDMA-mode of the CAOS smart camera is suited for applications where robust high dynamic range (DR) imaging is needed for un-attenuated un-spoiled bright light spectrally diverse targets.

High-resolution CCD imaging alternatives

NASA Astrophysics Data System (ADS)

Brown, D. L.; Acker, D. E.

1992-08-01

High resolution CCD color cameras have recently stimulated the interest of a large number of potential end-users for a wide range of practical applications. Real-time High Definition Television (HDTV) systems are now being used or considered for use in applications ranging from entertainment program origination through digital image storage to medical and scientific research. HDTV generation of electronic images offers significant cost and time-saving advantages over the use of film in such applications. Further in still image systems electronic image capture is faster and more efficient than conventional image scanners. The CCD still camera can capture 3-dimensional objects into the computing environment directly without having to shoot a picture on film develop it and then scan the image into a computer. 2. EXTENDING CCD TECHNOLOGY BEYOND BROADCAST Most standard production CCD sensor chips are made for broadcast-compatible systems. One popular CCD and the basis for this discussion offers arrays of roughly 750 x 580 picture elements (pixels) or a total array of approximately 435 pixels (see Fig. 1). FOR. A has developed a technique to increase the number of available pixels for a given image compared to that produced by the standard CCD itself. Using an inter-lined CCD with an overall spatial structure several times larger than the photo-sensitive sensor areas each of the CCD sensors is shifted in two dimensions in order to fill in spatial gaps between adjacent sensors.

Time-Resolved Measurements in Optoelectronic Microbioanalysis

NASA Technical Reports Server (NTRS)

Bearman, Gregory; Kossakovski, Dmitri

2003-01-01

A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

Bayesian model for matching the radiometric measurements of aerospace and field ocean color sensors.

PubMed

Salama, Mhd Suhyb; Su, Zhongbo

2010-01-01

A Bayesian model is developed to match aerospace ocean color observation to field measurements and derive the spatial variability of match-up sites. The performance of the model is tested against populations of synthesized spectra and full and reduced resolutions of MERIS data. The model derived the scale difference between synthesized satellite pixel and point measurements with R(2) > 0.88 and relative error < 21% in the spectral range from 400 nm to 695 nm. The sub-pixel variabilities of reduced resolution MERIS image are derived with less than 12% of relative errors in heterogeneous region. The method is generic and applicable to different sensors.

ASTER First Views of Red Sea, Ethiopia - Thermal-Infrared TIR Image monochrome

NASA Image and Video Library

2000-03-11

ASTER succeeded in acquiring this image at night, which is something Visible/Near Infrared VNIR) and Shortwave Infrared (SWIR) sensors cannot do. The scene covers the Red Sea coastline to an inland area of Ethiopia. White pixels represent areas with higher temperature material on the surface, while dark pixels indicate lower temperatures. This image shows ASTER's ability as a highly sensitive, temperature-discerning instrument and the first spaceborne TIR multi-band sensor in history. The size of image: 60 km x 60 km approx., ground resolution 90 m x 90 m approximately. http://photojournal.jpl.nasa.gov/catalog/PIA02452

Retina-like sensor image coordinates transformation and display

NASA Astrophysics Data System (ADS)

Cao, Fengmei; Cao, Nan; Bai, Tingzhu; Song, Shengyu

2015-03-01

For a new kind of retina-like senor camera, the image acquisition, coordinates transformation and interpolation need to be realized. Both of the coordinates transformation and interpolation are computed in polar coordinate due to the sensor's particular pixels distribution. The image interpolation is based on sub-pixel interpolation and its relative weights are got in polar coordinates. The hardware platform is composed of retina-like senor camera, image grabber and PC. Combined the MIL and OpenCV library, the software program is composed in VC++ on VS 2010. Experience results show that the system can realizes the real-time image acquisition, coordinate transformation and interpolation.

A Detailed Look at the Performance Characteristics of the Lightning Imaging Sensor

NASA Technical Reports Server (NTRS)

Zhang, Daile; Cummins, Kenneth L.; Bitzer, Phillip; Koshak, William J.

2018-01-01

The Lightning Imaging Sensor (LIS) on board the Tropical Rainfall Measuring Mission (TRMM) effectively reached its end of life on April 15, 2015 after 17+ years of observation. Given the wealth of information in the archived LIS lightning data, and growing use of optical observations of lightning from space throughout the world, it is still of importance to better understand LIS calibration and performance characteristics. In this work, we continue our efforts to quantify the optical characteristics of the LIS pixel array, and to further characterize the detection efficiency and location accuracy of LIS. The LIS pixel array was partitioned into four quadrants, each having its own signal amplifier and digital conversion hardware. In addition, the sensor optics resulted in a decreasing sensitivity with increasing displacement from the center of the array. These engineering limitations resulted in differences in the optical emissions detected across the pixel array. Our work to date has shown a 20% increase in the count of the lightning events detected in one of the LIS quadrants, because of a lower detection threshold. In this study, we will discuss our work in progress on these limitations, and their potential impact on the group- and flash-level parameters.

A novel method for morphological pleomorphism and heterogeneity quantitative measurement: Named cell feature level co-occurrence matrix.

PubMed

Saito, Akira; Numata, Yasushi; Hamada, Takuya; Horisawa, Tomoyoshi; Cosatto, Eric; Graf, Hans-Peter; Kuroda, Masahiko; Yamamoto, Yoichiro

2016-01-01

Recent developments in molecular pathology and genetic/epigenetic analysis of cancer tissue have resulted in a marked increase in objective and measurable data. In comparison, the traditional morphological analysis approach to pathology diagnosis, which can connect these molecular data and clinical diagnosis, is still mostly subjective. Even though the advent and popularization of digital pathology has provided a boost to computer-aided diagnosis, some important pathological concepts still remain largely non-quantitative and their associated data measurements depend on the pathologist's sense and experience. Such features include pleomorphism and heterogeneity. In this paper, we propose a method for the objective measurement of pleomorphism and heterogeneity, using the cell-level co-occurrence matrix. Our method is based on the widely used Gray-level co-occurrence matrix (GLCM), where relations between neighboring pixel intensity levels are captured into a co-occurrence matrix, followed by the application of analysis functions such as Haralick features. In the pathological tissue image, through image processing techniques, each nucleus can be measured and each nucleus has its own measureable features like nucleus size, roundness, contour length, intra-nucleus texture data (GLCM is one of the methods). In GLCM each nucleus in the tissue image corresponds to one pixel. In this approach the most important point is how to define the neighborhood of each nucleus. We define three types of neighborhoods of a nucleus, then create the co-occurrence matrix and apply Haralick feature functions. In each image pleomorphism and heterogeneity are then determined quantitatively. For our method, one pixel corresponds to one nucleus feature, and we therefore named our method Cell Feature Level Co-occurrence Matrix (CFLCM). We tested this method for several nucleus features. CFLCM is showed as a useful quantitative method for pleomorphism and heterogeneity on histopathological image analysis.

A fast fully constrained geometric unmixing of hyperspectral images

NASA Astrophysics Data System (ADS)

Zhou, Xin; Li, Xiao-run; Cui, Jian-tao; Zhao, Liao-ying; Zheng, Jun-peng

2014-11-01

A great challenge in hyperspectral image analysis is decomposing a mixed pixel into a collection of endmembers and their corresponding abundance fractions. This paper presents an improved implementation of Barycentric Coordinate approach to unmix hyperspectral images, integrating with the Most-Negative Remove Projection method to meet the abundance sum-to-one constraint (ASC) and abundance non-negativity constraint (ANC). The original barycentric coordinate approach interprets the endmember unmixing problem as a simplex volume ratio problem, which is solved by calculate the determinants of two augmented matrix. One consists of all the members and the other consist of the to-be-unmixed pixel and all the endmembers except for the one corresponding to the specific abundance that is to be estimated. In this paper, we first modified the algorithm of Barycentric Coordinate approach by bringing in the Matrix Determinant Lemma to simplify the unmixing process, which makes the calculation only contains linear matrix and vector operations. So, the matrix determinant calculation of every pixel, as the original algorithm did, is avoided. By the end of this step, the estimated abundance meet the ASC constraint. Then, the Most-Negative Remove Projection method is used to make the abundance fractions meet the full constraints. This algorithm is demonstrated both on synthetic and real images. The resulting algorithm yields the abundance maps that are similar to those obtained by FCLS, while the runtime is outperformed as its computational simplicity.

Depolarization in liquid-crystal televisions

NASA Astrophysics Data System (ADS)

Pezzaniti, Larry J.; McClain, Stephen C.; Chipman, Russell A.; Lu, Shih-Yau

1993-12-01

TVT-6000 liquid crystal television (LCTV) polarization properties have been mapped as a function of biased voltage to the pixel and angle of incidence by a Mueller-matrix imaging polarimeter at 632.8 nm. Operating without polarizers the LCTV shows between 2% to 9% depolarization depending on angle of incidence, the incident polarization state, and the pixel bias voltage.

An optimal algorithm for reconstructing images from binary measurements

NASA Astrophysics Data System (ADS)

Yang, Feng; Lu, Yue M.; Sbaiz, Luciano; Vetterli, Martin

2010-01-01

We have studied a camera with a very large number of binary pixels referred to as the gigavision camera [1] or the gigapixel digital film camera [2, 3]. Potential advantages of this new camera design include improved dynamic range, thanks to its logarithmic sensor response curve, and reduced exposure time in low light conditions, due to its highly sensitive photon detection mechanism. We use maximum likelihood estimator (MLE) to reconstruct a high quality conventional image from the binary sensor measurements of the gigavision camera. We prove that when the threshold T is "1", the negative loglikelihood function is a convex function. Therefore, optimal solution can be achieved using convex optimization. Base on filter bank techniques, fast algorithms are given for computing the gradient and the multiplication of a vector and Hessian matrix of the negative log-likelihood function. We show that with a minor change, our algorithm also works for estimating conventional images from multiple binary images. Numerical experiments with synthetic 1-D signals and images verify the effectiveness and quality of the proposed algorithm. Experimental results also show that estimation performance can be improved by increasing the oversampling factor or the number of binary images.

Penrose high-dynamic-range imaging

NASA Astrophysics Data System (ADS)

Li, Jia; Bai, Chenyan; Lin, Zhouchen; Yu, Jian

2016-05-01

High-dynamic-range (HDR) imaging is becoming increasingly popular and widespread. The most common multishot HDR approach, based on multiple low-dynamic-range images captured with different exposures, has difficulties in handling camera and object movements. The spatially varying exposures (SVE) technology provides a solution to overcome this limitation by obtaining multiple exposures of the scene in only one shot but suffers from a loss in spatial resolution of the captured image. While aperiodic assignment of exposures has been shown to be advantageous during reconstruction in alleviating resolution loss, almost all the existing imaging sensors use the square pixel layout, which is a periodic tiling of square pixels. We propose the Penrose pixel layout, using pixels in aperiodic rhombus Penrose tiling, for HDR imaging. With the SVE technology, Penrose pixel layout has both exposure and pixel aperiodicities. To investigate its performance, we have to reconstruct HDR images in square pixel layout from Penrose raw images with SVE. Since the two pixel layouts are different, the traditional HDR reconstruction methods are not applicable. We develop a reconstruction method for Penrose pixel layout using a Gaussian mixture model for regularization. Both quantitative and qualitative results show the superiority of Penrose pixel layout over square pixel layout.

Imaging performance of a Timepix detector based on semi-insulating GaAs

NASA Astrophysics Data System (ADS)

Zaťko, B.; Zápražný, Z.; Jakůbek, J.; Šagátová, A.; Boháček, P.; Sekáčová, M.; Korytár, D.; Nečas, V.; Žemlička, J.; Mora, Y.; Pichotka, M.

2018-01-01

This work focused on a Timepix chip [1] coupled with a bulk semi-insulating GaAs sensor. The sensor consisted of a matrix of 256 × 256 pixels with a pitch of 55 μm bump-bonded to a Timepix ASIC. The sensor was processed on a 350 μm-thick SI GaAs wafer. We carried out detector adjustment to optimize its performance. This included threshold equalization with setting up parameters of the Timepix chip, such as Ikrum, Pream, Vfbk, and so on. The energy calibration of the GaAs Timepix detector was realized using a 241Am radioisotope in two Timepix detector modes: time-over-threshold and threshold scan. An energy resolution of 4.4 keV in FWHM (Full Width at Half Maximum) was observed for 59.5 keV γ-photons using threshold scan mode. The X-ray imaging quality of the GaAs Timepix detector was tested using various samples irradiated by an X-ray source with a focal spot size smaller than 8 μm and accelerating voltage up to 80 kV. A 700 μm × 700 μm gold testing object (X-500-200-16Au with Siemens star) fabricated with high precision was used for the spatial resolution testing at different values of X-ray image magnification (up to 45). The measured spatial resolution of our X-ray imaging system was about 4 μm.

Development of a spectroscopic Mueller matrix imaging ellipsometer for nanostructure metrology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiuguo; Du, Weichao; Yuan, Kui

2016-05-15

In this paper, we describe the development of a spectroscopic Mueller matrix imaging ellipsometer (MMIE), which combines the great power of Mueller matrix ellipsometry with the high spatial resolution of optical microscopy. A dual rotating-compensator configuration is adopted to collect the full 4 × 4 imaging Mueller matrix in a single measurement. The light wavelengths are scanned in the range of 400–700 nm by a monochromator. The instrument has measurement accuracy and precision better than 0.01 for all the Mueller matrix elements in both the whole image and the whole spectral range. The instrument was then applied for the measurementmore » of nanostructures combined with an inverse diffraction problem solving technique. The experiment performed on a photoresist grating sample has demonstrated the great potential of MMIE for accurate grating reconstruction from spectral data collected by a single pixel of the camera and for efficient quantification of geometrical profile of the grating structure over a large area with pixel resolution. It is expected that MMIE will be a powerful tool for nanostructure metrology in future high-volume nanomanufacturing.« less

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

DTIC Science & Technology

2013-02-21

telescope consists of six Mimosa tracking planes, the readout data acquisition system and the trigger hardware, and provides a ≈ 3µm track point- ing...is larger than the Mimosa sensors of the telescope, separate sets of data were taken to cover the irradiated and non-irradiated regions of the sensors

Sensors for the CMS Forward Pixel Phase 1 Upgrade

NASA Astrophysics Data System (ADS)

Dilsiz, Kamuran; CMS Collaboration

2016-03-01

The next incarnation of the CMS forward pixel detector, to be installed during the year end extended technical stop 2016-17, will need to survive an integrated luminosity of 300 fb-1 with the inner radius of the active region of the disks decreasing from 6 to 4.5 cm. Based on the Run 1 experience and irradiation studies, the Phase 1 FPIX sensors will again be n-on-n DOFZ silicon, with parameters similar to those in the present run. We will review the design choices including a study during the prototyping phase to explore different p-stop layouts. Results from the quality assurance probing of the full production of sensor wafers will be described. The IV measurements are particularly impressive with current densities in range of 3-4 nA/cm2 at the full depletion voltage.

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process

NASA Astrophysics Data System (ADS)

Goiffon, Vincent; Magnan, Pierre; Bernard, Frédéric; Rolland, Guy; Saint-Pé, Olivier; Huger, Nicolas; Corbière, Franck

2008-02-01

We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging. We designed a test chip made of one 128×128-3T-pixel array with 10 μm pitch and more than 120 isolated test structures including photodiodes and MOSFETs with various implants and different sizes. All these devices were exposed to ionizing radiation up to 100 krad and their responses were correlated to identify the CMOS sensor weaknesses. Characterizations in darkness and under illumination demonstrated that dark current increase is the major sensor degradation. Shallow trench isolation was identified to be responsible for this degradation as it increases the number of generation centers in photodiode depletion regions. Consequences on hardness assurance and hardening-by-design are discussed.

Methods and apparatuses for detection of radiation with semiconductor image sensors

DOEpatents

Cogliati, Joshua Joseph

2018-04-10

A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

Radiation damage caused by cold neutrons in boron doped CMOS active pixel sensors

NASA Astrophysics Data System (ADS)

Linnik, B.; Bus, T.; Deveaux, M.; Doering, D.; Kudejova, P.; Wagner, F. M.; Yazgili, A.; Stroth, J.

2017-05-01

CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC and the tracker of ATLAS. In those applications, the sensors are exposed to sizeable radiation doses. While the tolerance of MAPS to ionizing radiation and fast hadrons is well known, the damage caused by low energy neutrons was not studied so far. Those slow neutrons may initiate nuclear fission of 10B dopants found in the B-doped silicon active medium of MAPS. This effect was expected to create an unknown amount of radiation damage beyond the predictions of the NIEL (Non Ionizing Energy Loss) model for pure silicon. We estimate the impact of this effect by calculating the additional NIEL created by this fission. Moreover, we show first measured data for CMOS sensors which were irradiated with cold neutrons. The empirical results contradict the prediction of the updated NIEL model both, qualitatively and quantitatively: the sensors irradiated with slow neutrons show an unexpected and strong acceptor removal, which is not observed in sensors irradiated with MeV neutrons.

Motion camera based on a custom vision sensor and an FPGA architecture

NASA Astrophysics Data System (ADS)

Arias-Estrada, Miguel

1998-09-01

A digital camera for custom focal plane arrays was developed. The camera allows the test and development of analog or mixed-mode arrays for focal plane processing. The camera is used with a custom sensor for motion detection to implement a motion computation system. The custom focal plane sensor detects moving edges at the pixel level using analog VLSI techniques. The sensor communicates motion events using the event-address protocol associated to a temporal reference. In a second stage, a coprocessing architecture based on a field programmable gate array (FPGA) computes the time-of-travel between adjacent pixels. The FPGA allows rapid prototyping and flexible architecture development. Furthermore, the FPGA interfaces the sensor to a compact PC computer which is used for high level control and data communication to the local network. The camera could be used in applications such as self-guided vehicles, mobile robotics and smart surveillance systems. The programmability of the FPGA allows the exploration of further signal processing like spatial edge detection or image segmentation tasks. The article details the motion algorithm, the sensor architecture, the use of the event- address protocol for velocity vector computation and the FPGA architecture used in the motion camera system.

Advanced microlens and color filter process technology for the high-efficiency CMOS and CCD image sensors

NASA Astrophysics Data System (ADS)

Fan, Yang-Tung; Peng, Chiou-Shian; Chu, Cheng-Yu

2000-12-01

New markets are emerging for digital electronic image device, especially in visual communications, PC camera, mobile/cell phone, security system, toys, vehicle image system and computer peripherals for document capture. To enable one-chip image system that image sensor is with a full digital interface, can make image capture devices in our daily lives. Adding a color filter to such image sensor in a pattern of mosaics pixel or wide stripes can make image more real and colorful. We can say 'color filter makes the life more colorful color filter is? Color filter means can filter image light source except the color with specific wavelength and transmittance that is same as color filter itself. Color filter process is coating and patterning green, red and blue (or cyan, magenta and yellow) mosaic resists onto matched pixel in image sensing array pixels. According to the signal caught from each pixel, we can figure out the environment image picture. Widely use of digital electronic camera and multimedia applications today makes the feature of color filter becoming bright. Although it has challenge but it is very worthy to develop the process of color filter. We provide the best service on shorter cycle time, excellent color quality, high and stable yield. The key issues of advanced color process have to be solved and implemented are planarization and micro-lens technology. Lost of key points of color filter process technology have to consider will also be described in this paper.

A high-speed trapezoid image sensor design for continuous traffic monitoring at signalized intersection approaches.

DOT National Transportation Integrated Search

2014-10-01

The goal of this project is to monitor traffic flow continuously with an innovative camera system composed of a custom : designed image sensor integrated circuit (IC) containing trapezoid pixel array and camera system that is capable of : intelligent...

Factorization-based texture segmentation

DOE PAGES

Yuan, Jiangye; Wang, Deliang; Cheriyadat, Anil M.

2015-06-17

This study introduces a factorization-based approach that efficiently segments textured images. We use local spectral histograms as features, and construct an M × N feature matrix using M-dimensional feature vectors in an N-pixel image. Based on the observation that each feature can be approximated by a linear combination of several representative features, we factor the feature matrix into two matrices-one consisting of the representative features and the other containing the weights of representative features at each pixel used for linear combination. The factorization method is based on singular value decomposition and nonnegative matrix factorization. The method uses local spectral histogramsmore » to discriminate region appearances in a computationally efficient way and at the same time accurately localizes region boundaries. Finally, the experiments conducted on public segmentation data sets show the promise of this simple yet powerful approach.« less

MAPS development for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.

2015-03-01

Monolithic Active Pixel Sensors (MAPS) offer the possibility to build pixel detectors and tracking layers with high spatial resolution and low material budget in commercial CMOS processes. Significant progress has been made in the field of MAPS in recent years, and they are now considered for the upgrades of the LHC experiments. This contribution will focus on MAPS detectors developed for the ALICE Inner Tracking System (ITS) upgrade and manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Several sensor chip prototypes have been developed and produced to optimise both charge collection and readout circuitry. The chips have been characterised using electrical measurements, radioactive sources and particle beams. The tests indicate that the sensors satisfy the ALICE requirements and first prototypes with the final size of 1.5 × 3 cm2 have been produced in the first half of 2014. This contribution summarises the characterisation measurements and presents first results from the full-scale chips.

TRAC performance estimates

NASA Technical Reports Server (NTRS)

Everett, L.

1992-01-01

This report documents the performance characteristics of a Targeting Reflective Alignment Concept (TRAC) sensor. The performance will be documented for both short and long ranges. For long ranges, the sensor is used without the flat mirror attached to the target. To better understand the capabilities of the TRAC based sensors, an engineering model is required. The model can be used to better design the system for a particular application. This is necessary because there are many interrelated design variables in application. These include lense parameters, camera, and target configuration. The report presents first an analytical development of the performance, and second an experimental verification of the equations. In the analytical presentation it is assumed that the best vision resolution is a single pixel element. The experimental results suggest however that the resolution is better than 1 pixel. Hence the analytical results should be considered worst case conditions. The report also discusses advantages and limitations of the TRAC sensor in light of the performance estimates. Finally the report discusses potential improvements.

Pixelated filters for spatial imaging

NASA Astrophysics Data System (ADS)

Mathieu, Karine; Lequime, Michel; Lumeau, Julien; Abel-Tiberini, Laetitia; Savin De Larclause, Isabelle; Berthon, Jacques

2015-10-01

Small satellites are often used by spatial agencies to meet scientific spatial mission requirements. Their payloads are composed of various instruments collecting an increasing amount of data, as well as respecting the growing constraints relative to volume and mass; So small-sized integrated camera have taken a favored place among these instruments. To ensure scene specific color information sensing, pixelated filters seem to be more attractive than filter wheels. The work presented here, in collaboration with Institut Fresnel, deals with the manufacturing of this kind of component, based on thin film technologies and photolithography processes. CCD detectors with a pixel pitch about 30 μm were considered. In the configuration where the matrix filters are positioned the closest to the detector, the matrix filters are composed of 2x2 macro pixels (e.g. 4 filters). These 4 filters have a bandwidth about 40 nm and are respectively centered at 550, 700, 770 and 840 nm with a specific rejection rate defined on the visible spectral range [500 - 900 nm]. After an intense design step, 4 thin-film structures have been elaborated with a maximum thickness of 5 μm. A run of tests has allowed us to choose the optimal micro-structuration parameters. The 100x100 matrix filters prototypes have been successfully manufactured with lift-off and ion assisted deposition processes. High spatial and spectral characterization, with a dedicated metrology bench, showed that initial specifications and simulations were globally met. These excellent performances knock down the technological barriers for high-end integrated specific multi spectral imaging.

Circuit design for the retina-like image sensor based on space-variant lens array

NASA Astrophysics Data System (ADS)

Gao, Hongxun; Hao, Qun; Jin, Xuefeng; Cao, Jie; Liu, Yue; Song, Yong; Fan, Fan

2013-12-01

Retina-like image sensor is based on the non-uniformity of the human eyes and the log-polar coordinate theory. It has advantages of high-quality data compression and redundant information elimination. However, retina-like image sensors based on the CMOS craft have drawbacks such as high cost, low sensitivity and signal outputting efficiency and updating inconvenience. Therefore, this paper proposes a retina-like image sensor based on space-variant lens array, focusing on the circuit design to provide circuit support to the whole system. The circuit includes the following parts: (1) A photo-detector array with a lens array to convert optical signals to electrical signals; (2) a strobe circuit for time-gating of the pixels and parallel paths for high-speed transmission of the data; (3) a high-precision digital potentiometer for the I-V conversion, ratio normalization and sensitivity adjustment, a programmable gain amplifier for automatic generation control(AGC), and a A/D converter for the A/D conversion in every path; (4) the digital data is displayed on LCD and stored temporarily in DDR2 SDRAM; (5) a USB port to transfer the data to PC; (6) the whole system is controlled by FPGA. This circuit has advantages as lower cost, larger pixels, updating convenience and higher signal outputting efficiency. Experiments have proved that the grayscale output of every pixel basically matches the target and a non-uniform image of the target is ideally achieved in real time. The circuit can provide adequate technical support to retina-like image sensors based on space-variant lens array.